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9 | 3439-3442 | 5 × 1016 m–3 Solution Note that thermally generated electrons (ni ~1016 m–3) are
negligibly small as compared to those produced by doping Therefore, ne »»»»» ND Since nenh = ni
2, The number of holes
nh = (2 |
9 | 3440-3443 | Solution Note that thermally generated electrons (ni ~1016 m–3) are
negligibly small as compared to those produced by doping Therefore, ne »»»»» ND Since nenh = ni
2, The number of holes
nh = (2 25 × 1032)/(5 ×1022)
~ 4 |
9 | 3441-3444 | Therefore, ne »»»»» ND Since nenh = ni
2, The number of holes
nh = (2 25 × 1032)/(5 ×1022)
~ 4 5 × 109 m–3
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14 |
9 | 3442-3445 | Since nenh = ni
2, The number of holes
nh = (2 25 × 1032)/(5 ×1022)
~ 4 5 × 109 m–3
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14 5 p-n JUNCTION
A p-n junction is the basic building block of many semiconductor devices
like diodes, transistor, etc |
9 | 3443-3446 | 25 × 1032)/(5 ×1022)
~ 4 5 × 109 m–3
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Simple Circuits
14 5 p-n JUNCTION
A p-n junction is the basic building block of many semiconductor devices
like diodes, transistor, etc A clear understanding of the junction behaviour
is important to analyse the working of other semiconductor devices |
9 | 3444-3447 | 5 × 109 m–3
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14 5 p-n JUNCTION
A p-n junction is the basic building block of many semiconductor devices
like diodes, transistor, etc A clear understanding of the junction behaviour
is important to analyse the working of other semiconductor devices We will now try to understand how a junction is formed and how the
junction behaves under the influence of external applied voltage (also
called bias) |
9 | 3445-3448 | 5 p-n JUNCTION
A p-n junction is the basic building block of many semiconductor devices
like diodes, transistor, etc A clear understanding of the junction behaviour
is important to analyse the working of other semiconductor devices We will now try to understand how a junction is formed and how the
junction behaves under the influence of external applied voltage (also
called bias) 14 |
9 | 3446-3449 | A clear understanding of the junction behaviour
is important to analyse the working of other semiconductor devices We will now try to understand how a junction is formed and how the
junction behaves under the influence of external applied voltage (also
called bias) 14 5 |
9 | 3447-3450 | We will now try to understand how a junction is formed and how the
junction behaves under the influence of external applied voltage (also
called bias) 14 5 1 p-n junction formation
Consider a thin p-type silicon (p-Si) semiconductor wafer |
9 | 3448-3451 | 14 5 1 p-n junction formation
Consider a thin p-type silicon (p-Si) semiconductor wafer By adding
precisely a small quantity of pentavelent impurity, part of the p-Si wafer
can be converted into n-Si |
9 | 3449-3452 | 5 1 p-n junction formation
Consider a thin p-type silicon (p-Si) semiconductor wafer By adding
precisely a small quantity of pentavelent impurity, part of the p-Si wafer
can be converted into n-Si There are several processes by which a
semiconductor can be formed |
9 | 3450-3453 | 1 p-n junction formation
Consider a thin p-type silicon (p-Si) semiconductor wafer By adding
precisely a small quantity of pentavelent impurity, part of the p-Si wafer
can be converted into n-Si There are several processes by which a
semiconductor can be formed The wafer now contains p-region and
n-region and a metallurgical junction between p-, and n- region |
9 | 3451-3454 | By adding
precisely a small quantity of pentavelent impurity, part of the p-Si wafer
can be converted into n-Si There are several processes by which a
semiconductor can be formed The wafer now contains p-region and
n-region and a metallurgical junction between p-, and n- region Two important processes occur during the formation of a p-n junction:
diffusion and drift |
9 | 3452-3455 | There are several processes by which a
semiconductor can be formed The wafer now contains p-region and
n-region and a metallurgical junction between p-, and n- region Two important processes occur during the formation of a p-n junction:
diffusion and drift We know that in an n-type semiconductor, the
concentration of electrons (number of electrons per unit volume) is more
compared to the concentration of holes |
9 | 3453-3456 | The wafer now contains p-region and
n-region and a metallurgical junction between p-, and n- region Two important processes occur during the formation of a p-n junction:
diffusion and drift We know that in an n-type semiconductor, the
concentration of electrons (number of electrons per unit volume) is more
compared to the concentration of holes Similarly, in a p-type
semiconductor, the concentration of holes is more than the concentration
of electrons |
9 | 3454-3457 | Two important processes occur during the formation of a p-n junction:
diffusion and drift We know that in an n-type semiconductor, the
concentration of electrons (number of electrons per unit volume) is more
compared to the concentration of holes Similarly, in a p-type
semiconductor, the concentration of holes is more than the concentration
of electrons During the formation of p-n junction, and due to the
concentration gradient across p-, and n- sides, holes diffuse from p-side
to n-side (p ® n) and electrons diffuse from n-side to p-side (n ® p) |
9 | 3455-3458 | We know that in an n-type semiconductor, the
concentration of electrons (number of electrons per unit volume) is more
compared to the concentration of holes Similarly, in a p-type
semiconductor, the concentration of holes is more than the concentration
of electrons During the formation of p-n junction, and due to the
concentration gradient across p-, and n- sides, holes diffuse from p-side
to n-side (p ® n) and electrons diffuse from n-side to p-side (n ® p) This
motion of charge carries gives rise to diffusion current across the junction |
9 | 3456-3459 | Similarly, in a p-type
semiconductor, the concentration of holes is more than the concentration
of electrons During the formation of p-n junction, and due to the
concentration gradient across p-, and n- sides, holes diffuse from p-side
to n-side (p ® n) and electrons diffuse from n-side to p-side (n ® p) This
motion of charge carries gives rise to diffusion current across the junction When an electron diffuses from n ® p, it leaves behind an ionised
donor on n-side |
9 | 3457-3460 | During the formation of p-n junction, and due to the
concentration gradient across p-, and n- sides, holes diffuse from p-side
to n-side (p ® n) and electrons diffuse from n-side to p-side (n ® p) This
motion of charge carries gives rise to diffusion current across the junction When an electron diffuses from n ® p, it leaves behind an ionised
donor on n-side This ionised donor (positive charge) is immobile as it is
bonded to the surrounding atoms |
9 | 3458-3461 | This
motion of charge carries gives rise to diffusion current across the junction When an electron diffuses from n ® p, it leaves behind an ionised
donor on n-side This ionised donor (positive charge) is immobile as it is
bonded to the surrounding atoms As the electrons continue to diffuse
from n ® p, a layer of positive charge (or positive space-charge region) on
n-side of the junction is developed |
9 | 3459-3462 | When an electron diffuses from n ® p, it leaves behind an ionised
donor on n-side This ionised donor (positive charge) is immobile as it is
bonded to the surrounding atoms As the electrons continue to diffuse
from n ® p, a layer of positive charge (or positive space-charge region) on
n-side of the junction is developed Similarly, when a hole diffuses from p ® n due to the concentration
gradient, it leaves behind an ionised acceptor (negative charge) which is
immobile |
9 | 3460-3463 | This ionised donor (positive charge) is immobile as it is
bonded to the surrounding atoms As the electrons continue to diffuse
from n ® p, a layer of positive charge (or positive space-charge region) on
n-side of the junction is developed Similarly, when a hole diffuses from p ® n due to the concentration
gradient, it leaves behind an ionised acceptor (negative charge) which is
immobile As the holes continue to diffuse, a layer of negative charge (or
negative space-charge region) on the p-side of the junction is developed |
9 | 3461-3464 | As the electrons continue to diffuse
from n ® p, a layer of positive charge (or positive space-charge region) on
n-side of the junction is developed Similarly, when a hole diffuses from p ® n due to the concentration
gradient, it leaves behind an ionised acceptor (negative charge) which is
immobile As the holes continue to diffuse, a layer of negative charge (or
negative space-charge region) on the p-side of the junction is developed This space-charge region on either side of the junction together is known
as depletion region as the electrons and holes taking
part in the initial movement across the junction depleted
the region of its free charges (Fig |
9 | 3462-3465 | Similarly, when a hole diffuses from p ® n due to the concentration
gradient, it leaves behind an ionised acceptor (negative charge) which is
immobile As the holes continue to diffuse, a layer of negative charge (or
negative space-charge region) on the p-side of the junction is developed This space-charge region on either side of the junction together is known
as depletion region as the electrons and holes taking
part in the initial movement across the junction depleted
the region of its free charges (Fig 14 |
9 | 3463-3466 | As the holes continue to diffuse, a layer of negative charge (or
negative space-charge region) on the p-side of the junction is developed This space-charge region on either side of the junction together is known
as depletion region as the electrons and holes taking
part in the initial movement across the junction depleted
the region of its free charges (Fig 14 10) |
9 | 3464-3467 | This space-charge region on either side of the junction together is known
as depletion region as the electrons and holes taking
part in the initial movement across the junction depleted
the region of its free charges (Fig 14 10) The thickness
of depletion region is of the order of one-tenth of a
micrometre |
9 | 3465-3468 | 14 10) The thickness
of depletion region is of the order of one-tenth of a
micrometre Due to the positive space-charge region on
n-side of the junction and negative space charge region
on p-side of the junction, an electric field directed from
positive charge towards negative charge develops |
9 | 3466-3469 | 10) The thickness
of depletion region is of the order of one-tenth of a
micrometre Due to the positive space-charge region on
n-side of the junction and negative space charge region
on p-side of the junction, an electric field directed from
positive charge towards negative charge develops Due
to this field, an electron on p-side of the junction moves
to n-side and a hole on n-side of the junction moves to p-
side |
9 | 3467-3470 | The thickness
of depletion region is of the order of one-tenth of a
micrometre Due to the positive space-charge region on
n-side of the junction and negative space charge region
on p-side of the junction, an electric field directed from
positive charge towards negative charge develops Due
to this field, an electron on p-side of the junction moves
to n-side and a hole on n-side of the junction moves to p-
side The motion of charge carriers due to the electric field
is called drift |
9 | 3468-3471 | Due to the positive space-charge region on
n-side of the junction and negative space charge region
on p-side of the junction, an electric field directed from
positive charge towards negative charge develops Due
to this field, an electron on p-side of the junction moves
to n-side and a hole on n-side of the junction moves to p-
side The motion of charge carriers due to the electric field
is called drift Thus a drift current, which is opposite in
direction to the diffusion current (Fig |
9 | 3469-3472 | Due
to this field, an electron on p-side of the junction moves
to n-side and a hole on n-side of the junction moves to p-
side The motion of charge carriers due to the electric field
is called drift Thus a drift current, which is opposite in
direction to the diffusion current (Fig 14 |
9 | 3470-3473 | The motion of charge carriers due to the electric field
is called drift Thus a drift current, which is opposite in
direction to the diffusion current (Fig 14 10) starts |
9 | 3471-3474 | Thus a drift current, which is opposite in
direction to the diffusion current (Fig 14 10) starts FIGURE 14 |
9 | 3472-3475 | 14 10) starts FIGURE 14 10 p-n junction
formation process |
9 | 3473-3476 | 10) starts FIGURE 14 10 p-n junction
formation process Formation and working of p-n junction diode
http://hyperphysics |
9 | 3474-3477 | FIGURE 14 10 p-n junction
formation process Formation and working of p-n junction diode
http://hyperphysics phy-astr |
9 | 3475-3478 | 10 p-n junction
formation process Formation and working of p-n junction diode
http://hyperphysics phy-astr gsu |
9 | 3476-3479 | Formation and working of p-n junction diode
http://hyperphysics phy-astr gsu edu/hbase/solids/pnjun |
9 | 3477-3480 | phy-astr gsu edu/hbase/solids/pnjun html
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EXAMPLE 14 |
9 | 3478-3481 | gsu edu/hbase/solids/pnjun html
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EXAMPLE 14 3
Initially, diffusion current is large and drift current is small |
9 | 3479-3482 | edu/hbase/solids/pnjun html
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EXAMPLE 14 3
Initially, diffusion current is large and drift current is small As the diffusion process continues, the space-charge regions
on either side of the junction extend, thus increasing the electric
field strength and hence drift current |
9 | 3480-3483 | html
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EXAMPLE 14 3
Initially, diffusion current is large and drift current is small As the diffusion process continues, the space-charge regions
on either side of the junction extend, thus increasing the electric
field strength and hence drift current This process continues
until the diffusion current equals the drift current |
9 | 3481-3484 | 3
Initially, diffusion current is large and drift current is small As the diffusion process continues, the space-charge regions
on either side of the junction extend, thus increasing the electric
field strength and hence drift current This process continues
until the diffusion current equals the drift current Thus a p-n
junction is formed |
9 | 3482-3485 | As the diffusion process continues, the space-charge regions
on either side of the junction extend, thus increasing the electric
field strength and hence drift current This process continues
until the diffusion current equals the drift current Thus a p-n
junction is formed In a p-n junction under equilibrium there
is no net current |
9 | 3483-3486 | This process continues
until the diffusion current equals the drift current Thus a p-n
junction is formed In a p-n junction under equilibrium there
is no net current The loss of electrons from the n-region and the gain of
electron by the p-region causes a difference of potential across
the junction of the two regions |
9 | 3484-3487 | Thus a p-n
junction is formed In a p-n junction under equilibrium there
is no net current The loss of electrons from the n-region and the gain of
electron by the p-region causes a difference of potential across
the junction of the two regions The polarity of this potential is
such as to oppose further flow of carriers so that a condition of
equilibrium exists |
9 | 3485-3488 | In a p-n junction under equilibrium there
is no net current The loss of electrons from the n-region and the gain of
electron by the p-region causes a difference of potential across
the junction of the two regions The polarity of this potential is
such as to oppose further flow of carriers so that a condition of
equilibrium exists Figure 14 |
9 | 3486-3489 | The loss of electrons from the n-region and the gain of
electron by the p-region causes a difference of potential across
the junction of the two regions The polarity of this potential is
such as to oppose further flow of carriers so that a condition of
equilibrium exists Figure 14 11 shows the p-n junction at
equilibrium and the potential across the junction |
9 | 3487-3490 | The polarity of this potential is
such as to oppose further flow of carriers so that a condition of
equilibrium exists Figure 14 11 shows the p-n junction at
equilibrium and the potential across the junction The
n-material has lost electrons, and p material has acquired
electrons |
9 | 3488-3491 | Figure 14 11 shows the p-n junction at
equilibrium and the potential across the junction The
n-material has lost electrons, and p material has acquired
electrons The n material is thus positive relative to the p
material |
9 | 3489-3492 | 11 shows the p-n junction at
equilibrium and the potential across the junction The
n-material has lost electrons, and p material has acquired
electrons The n material is thus positive relative to the p
material Since this potential tends to prevent the movement of
electron from the n region into the p region, it is often called a
barrier potential |
9 | 3490-3493 | The
n-material has lost electrons, and p material has acquired
electrons The n material is thus positive relative to the p
material Since this potential tends to prevent the movement of
electron from the n region into the p region, it is often called a
barrier potential Example 14 |
9 | 3491-3494 | The n material is thus positive relative to the p
material Since this potential tends to prevent the movement of
electron from the n region into the p region, it is often called a
barrier potential Example 14 3 Can we take one slab of p-type semiconductor and
physically join it to another n-type semiconductor to get p-n junction |
9 | 3492-3495 | Since this potential tends to prevent the movement of
electron from the n region into the p region, it is often called a
barrier potential Example 14 3 Can we take one slab of p-type semiconductor and
physically join it to another n-type semiconductor to get p-n junction Solution No |
9 | 3493-3496 | Example 14 3 Can we take one slab of p-type semiconductor and
physically join it to another n-type semiconductor to get p-n junction Solution No Any slab, howsoever flat, will have roughness much
larger than the inter-atomic crystal spacing (~2 to 3 Å) and hence
continuous contact at the atomic level will not be possible |
9 | 3494-3497 | 3 Can we take one slab of p-type semiconductor and
physically join it to another n-type semiconductor to get p-n junction Solution No Any slab, howsoever flat, will have roughness much
larger than the inter-atomic crystal spacing (~2 to 3 Å) and hence
continuous contact at the atomic level will not be possible The junction
will behave as a discontinuity for the flowing charge carriers |
9 | 3495-3498 | Solution No Any slab, howsoever flat, will have roughness much
larger than the inter-atomic crystal spacing (~2 to 3 Å) and hence
continuous contact at the atomic level will not be possible The junction
will behave as a discontinuity for the flowing charge carriers 14 |
9 | 3496-3499 | Any slab, howsoever flat, will have roughness much
larger than the inter-atomic crystal spacing (~2 to 3 Å) and hence
continuous contact at the atomic level will not be possible The junction
will behave as a discontinuity for the flowing charge carriers 14 6 SEMICONDUCTOR DIODE
A semiconductor diode [Fig |
9 | 3497-3500 | The junction
will behave as a discontinuity for the flowing charge carriers 14 6 SEMICONDUCTOR DIODE
A semiconductor diode [Fig 14 |
9 | 3498-3501 | 14 6 SEMICONDUCTOR DIODE
A semiconductor diode [Fig 14 12(a)] is basically a p-n
junction with metallic contacts provided at the ends for
the application of an external voltage |
9 | 3499-3502 | 6 SEMICONDUCTOR DIODE
A semiconductor diode [Fig 14 12(a)] is basically a p-n
junction with metallic contacts provided at the ends for
the application of an external voltage It is a two terminal
device |
9 | 3500-3503 | 14 12(a)] is basically a p-n
junction with metallic contacts provided at the ends for
the application of an external voltage It is a two terminal
device A p-n junction diode is symbolically represented
as shown in Fig |
9 | 3501-3504 | 12(a)] is basically a p-n
junction with metallic contacts provided at the ends for
the application of an external voltage It is a two terminal
device A p-n junction diode is symbolically represented
as shown in Fig 14 |
9 | 3502-3505 | It is a two terminal
device A p-n junction diode is symbolically represented
as shown in Fig 14 12(b) |
9 | 3503-3506 | A p-n junction diode is symbolically represented
as shown in Fig 14 12(b) The direction of arrow indicates the conventional
direction of current (when the diode is under forward
bias) |
9 | 3504-3507 | 14 12(b) The direction of arrow indicates the conventional
direction of current (when the diode is under forward
bias) The equilibrium barrier potential can be altered
by applying an external voltage V across the diode |
9 | 3505-3508 | 12(b) The direction of arrow indicates the conventional
direction of current (when the diode is under forward
bias) The equilibrium barrier potential can be altered
by applying an external voltage V across the diode The
situation of p-n junction diode under equilibrium
(without bias) is shown in Fig |
9 | 3506-3509 | The direction of arrow indicates the conventional
direction of current (when the diode is under forward
bias) The equilibrium barrier potential can be altered
by applying an external voltage V across the diode The
situation of p-n junction diode under equilibrium
(without bias) is shown in Fig 14 |
9 | 3507-3510 | The equilibrium barrier potential can be altered
by applying an external voltage V across the diode The
situation of p-n junction diode under equilibrium
(without bias) is shown in Fig 14 11(a) and (b) |
9 | 3508-3511 | The
situation of p-n junction diode under equilibrium
(without bias) is shown in Fig 14 11(a) and (b) 14 |
9 | 3509-3512 | 14 11(a) and (b) 14 6 |
9 | 3510-3513 | 11(a) and (b) 14 6 1 p-n junction diode under forward bias
When an external voltage V is applied across a semiconductor diode such
that p-side is connected to the positive terminal of the battery and n-side
to the negative terminal [Fig |
9 | 3511-3514 | 14 6 1 p-n junction diode under forward bias
When an external voltage V is applied across a semiconductor diode such
that p-side is connected to the positive terminal of the battery and n-side
to the negative terminal [Fig 14 |
9 | 3512-3515 | 6 1 p-n junction diode under forward bias
When an external voltage V is applied across a semiconductor diode such
that p-side is connected to the positive terminal of the battery and n-side
to the negative terminal [Fig 14 13(a)], it is said to be forward biased |
9 | 3513-3516 | 1 p-n junction diode under forward bias
When an external voltage V is applied across a semiconductor diode such
that p-side is connected to the positive terminal of the battery and n-side
to the negative terminal [Fig 14 13(a)], it is said to be forward biased The applied voltage mostly drops across the depletion region and the
voltage drop across the p-side and n-side of the junction is negligible |
9 | 3514-3517 | 14 13(a)], it is said to be forward biased The applied voltage mostly drops across the depletion region and the
voltage drop across the p-side and n-side of the junction is negligible (This is because the resistance of the depletion region – a region where
there are no charges – is very high compared to the resistance of n-side
and p-side |
9 | 3515-3518 | 13(a)], it is said to be forward biased The applied voltage mostly drops across the depletion region and the
voltage drop across the p-side and n-side of the junction is negligible (This is because the resistance of the depletion region – a region where
there are no charges – is very high compared to the resistance of n-side
and p-side ) The direction of the applied voltage (V ) is opposite to the
FIGURE 14 |
9 | 3516-3519 | The applied voltage mostly drops across the depletion region and the
voltage drop across the p-side and n-side of the junction is negligible (This is because the resistance of the depletion region – a region where
there are no charges – is very high compared to the resistance of n-side
and p-side ) The direction of the applied voltage (V ) is opposite to the
FIGURE 14 11 (a) Diode under
equilibrium (V = 0), (b) Barrier
potential under no bias |
9 | 3517-3520 | (This is because the resistance of the depletion region – a region where
there are no charges – is very high compared to the resistance of n-side
and p-side ) The direction of the applied voltage (V ) is opposite to the
FIGURE 14 11 (a) Diode under
equilibrium (V = 0), (b) Barrier
potential under no bias FIGURE 14 |
9 | 3518-3521 | ) The direction of the applied voltage (V ) is opposite to the
FIGURE 14 11 (a) Diode under
equilibrium (V = 0), (b) Barrier
potential under no bias FIGURE 14 12 (a) Semiconductor diode,
(b) Symbol for p-n junction diode |
9 | 3519-3522 | 11 (a) Diode under
equilibrium (V = 0), (b) Barrier
potential under no bias FIGURE 14 12 (a) Semiconductor diode,
(b) Symbol for p-n junction diode n
p
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built-in potential V0 |
9 | 3520-3523 | FIGURE 14 12 (a) Semiconductor diode,
(b) Symbol for p-n junction diode n
p
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built-in potential V0 As a result, the depletion layer width
decreases and the barrier height is reduced [Fig |
9 | 3521-3524 | 12 (a) Semiconductor diode,
(b) Symbol for p-n junction diode n
p
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built-in potential V0 As a result, the depletion layer width
decreases and the barrier height is reduced [Fig 14 |
9 | 3522-3525 | n
p
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built-in potential V0 As a result, the depletion layer width
decreases and the barrier height is reduced [Fig 14 13(b)] |
9 | 3523-3526 | As a result, the depletion layer width
decreases and the barrier height is reduced [Fig 14 13(b)] The
effective barrier height under forward bias is (V0 – V ) |
9 | 3524-3527 | 14 13(b)] The
effective barrier height under forward bias is (V0 – V ) If the applied voltage is small, the barrier potential will be
reduced only slightly below the equilibrium value, and only a
small number of carriers in the material—those that happen to
be in the uppermost energy levels—will possess enough energy
to cross the junction |
9 | 3525-3528 | 13(b)] The
effective barrier height under forward bias is (V0 – V ) If the applied voltage is small, the barrier potential will be
reduced only slightly below the equilibrium value, and only a
small number of carriers in the material—those that happen to
be in the uppermost energy levels—will possess enough energy
to cross the junction So the current will be small |
9 | 3526-3529 | The
effective barrier height under forward bias is (V0 – V ) If the applied voltage is small, the barrier potential will be
reduced only slightly below the equilibrium value, and only a
small number of carriers in the material—those that happen to
be in the uppermost energy levels—will possess enough energy
to cross the junction So the current will be small If we increase
the applied voltage significantly, the barrier height will be reduced
and more number of carriers will have the required energy |
9 | 3527-3530 | If the applied voltage is small, the barrier potential will be
reduced only slightly below the equilibrium value, and only a
small number of carriers in the material—those that happen to
be in the uppermost energy levels—will possess enough energy
to cross the junction So the current will be small If we increase
the applied voltage significantly, the barrier height will be reduced
and more number of carriers will have the required energy Thus
the current increases |
9 | 3528-3531 | So the current will be small If we increase
the applied voltage significantly, the barrier height will be reduced
and more number of carriers will have the required energy Thus
the current increases Due to the applied voltage, electrons from n-side cross the
depletion region and reach p-side (where they are minority
carries) |
9 | 3529-3532 | If we increase
the applied voltage significantly, the barrier height will be reduced
and more number of carriers will have the required energy Thus
the current increases Due to the applied voltage, electrons from n-side cross the
depletion region and reach p-side (where they are minority
carries) Similarly, holes from p-side cross the junction and reach
the n-side (where they are minority carries) |
9 | 3530-3533 | Thus
the current increases Due to the applied voltage, electrons from n-side cross the
depletion region and reach p-side (where they are minority
carries) Similarly, holes from p-side cross the junction and reach
the n-side (where they are minority carries) This process under
forward bias is known as minority carrier injection |
9 | 3531-3534 | Due to the applied voltage, electrons from n-side cross the
depletion region and reach p-side (where they are minority
carries) Similarly, holes from p-side cross the junction and reach
the n-side (where they are minority carries) This process under
forward bias is known as minority carrier injection At the
junction boundary, on each side, the minority carrier
concentration increases significantly compared to the locations
far from the junction |
9 | 3532-3535 | Similarly, holes from p-side cross the junction and reach
the n-side (where they are minority carries) This process under
forward bias is known as minority carrier injection At the
junction boundary, on each side, the minority carrier
concentration increases significantly compared to the locations
far from the junction Due to this concentration gradient, the injected electrons on
p-side diffuse from the junction edge of p-side to the other end
of p-side |
9 | 3533-3536 | This process under
forward bias is known as minority carrier injection At the
junction boundary, on each side, the minority carrier
concentration increases significantly compared to the locations
far from the junction Due to this concentration gradient, the injected electrons on
p-side diffuse from the junction edge of p-side to the other end
of p-side Likewise, the injected holes on n-side diffuse from the
junction edge of n-side to the other end of n-side
(Fig |
9 | 3534-3537 | At the
junction boundary, on each side, the minority carrier
concentration increases significantly compared to the locations
far from the junction Due to this concentration gradient, the injected electrons on
p-side diffuse from the junction edge of p-side to the other end
of p-side Likewise, the injected holes on n-side diffuse from the
junction edge of n-side to the other end of n-side
(Fig 14 |
9 | 3535-3538 | Due to this concentration gradient, the injected electrons on
p-side diffuse from the junction edge of p-side to the other end
of p-side Likewise, the injected holes on n-side diffuse from the
junction edge of n-side to the other end of n-side
(Fig 14 14) |
9 | 3536-3539 | Likewise, the injected holes on n-side diffuse from the
junction edge of n-side to the other end of n-side
(Fig 14 14) This motion of charged carriers on either side
gives rise to current |
9 | 3537-3540 | 14 14) This motion of charged carriers on either side
gives rise to current The total diode forward current is sum
of hole diffusion current and conventional current due to
electron diffusion |
9 | 3538-3541 | 14) This motion of charged carriers on either side
gives rise to current The total diode forward current is sum
of hole diffusion current and conventional current due to
electron diffusion The magnitude of this current is usually
in mA |
Subsets and Splits