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9 | 3539-3542 | This motion of charged carriers on either side
gives rise to current The total diode forward current is sum
of hole diffusion current and conventional current due to
electron diffusion The magnitude of this current is usually
in mA 14 |
9 | 3540-3543 | The total diode forward current is sum
of hole diffusion current and conventional current due to
electron diffusion The magnitude of this current is usually
in mA 14 6 |
9 | 3541-3544 | The magnitude of this current is usually
in mA 14 6 2 p-n junction diode under reverse bias
When an external voltage (V ) is applied across the diode such
that n-side is positive and p-side is negative, it is said to be
reverse biased [Fig |
9 | 3542-3545 | 14 6 2 p-n junction diode under reverse bias
When an external voltage (V ) is applied across the diode such
that n-side is positive and p-side is negative, it is said to be
reverse biased [Fig 14 |
9 | 3543-3546 | 6 2 p-n junction diode under reverse bias
When an external voltage (V ) is applied across the diode such
that n-side is positive and p-side is negative, it is said to be
reverse biased [Fig 14 15(a)] |
9 | 3544-3547 | 2 p-n junction diode under reverse bias
When an external voltage (V ) is applied across the diode such
that n-side is positive and p-side is negative, it is said to be
reverse biased [Fig 14 15(a)] The applied voltage mostly
drops across the depletion region |
9 | 3545-3548 | 14 15(a)] The applied voltage mostly
drops across the depletion region The direction of applied voltage is same
as the direction of barrier potential |
9 | 3546-3549 | 15(a)] The applied voltage mostly
drops across the depletion region The direction of applied voltage is same
as the direction of barrier potential As a result, the barrier height increases
and the depletion region widens due to the change in the electric field |
9 | 3547-3550 | The applied voltage mostly
drops across the depletion region The direction of applied voltage is same
as the direction of barrier potential As a result, the barrier height increases
and the depletion region widens due to the change in the electric field The effective barrier height under reverse bias is (V0 + V ), [Fig |
9 | 3548-3551 | The direction of applied voltage is same
as the direction of barrier potential As a result, the barrier height increases
and the depletion region widens due to the change in the electric field The effective barrier height under reverse bias is (V0 + V ), [Fig 14 |
9 | 3549-3552 | As a result, the barrier height increases
and the depletion region widens due to the change in the electric field The effective barrier height under reverse bias is (V0 + V ), [Fig 14 15(b)] |
9 | 3550-3553 | The effective barrier height under reverse bias is (V0 + V ), [Fig 14 15(b)] This suppresses the flow of electrons from n ® p and holes from p ® n |
9 | 3551-3554 | 14 15(b)] This suppresses the flow of electrons from n ® p and holes from p ® n Thus, diffusion current, decreases enormously compared to the diode
under forward bias |
9 | 3552-3555 | 15(b)] This suppresses the flow of electrons from n ® p and holes from p ® n Thus, diffusion current, decreases enormously compared to the diode
under forward bias The electric field direction of the junction is such that if electrons on
p-side or holes on n-side in their random motion come close to the
junction, they will be swept to its majority zone |
9 | 3553-3556 | This suppresses the flow of electrons from n ® p and holes from p ® n Thus, diffusion current, decreases enormously compared to the diode
under forward bias The electric field direction of the junction is such that if electrons on
p-side or holes on n-side in their random motion come close to the
junction, they will be swept to its majority zone This drift of carriers
gives rise to current |
9 | 3554-3557 | Thus, diffusion current, decreases enormously compared to the diode
under forward bias The electric field direction of the junction is such that if electrons on
p-side or holes on n-side in their random motion come close to the
junction, they will be swept to its majority zone This drift of carriers
gives rise to current The drift current is of the order of a few mA |
9 | 3555-3558 | The electric field direction of the junction is such that if electrons on
p-side or holes on n-side in their random motion come close to the
junction, they will be swept to its majority zone This drift of carriers
gives rise to current The drift current is of the order of a few mA This is
quite low because it is due to the motion of carriers from their minority
side to their majority side across the junction |
9 | 3556-3559 | This drift of carriers
gives rise to current The drift current is of the order of a few mA This is
quite low because it is due to the motion of carriers from their minority
side to their majority side across the junction The drift current is also
there under forward bias but it is negligible (mA) when compared with
current due to injected carriers which is usually in mA |
9 | 3557-3560 | The drift current is of the order of a few mA This is
quite low because it is due to the motion of carriers from their minority
side to their majority side across the junction The drift current is also
there under forward bias but it is negligible (mA) when compared with
current due to injected carriers which is usually in mA The diode reverse current is not very much dependent on the applied
voltage |
9 | 3558-3561 | This is
quite low because it is due to the motion of carriers from their minority
side to their majority side across the junction The drift current is also
there under forward bias but it is negligible (mA) when compared with
current due to injected carriers which is usually in mA The diode reverse current is not very much dependent on the applied
voltage Even a small voltage is sufficient to sweep the minority carriers
from one side of the junction to the other side of the junction |
9 | 3559-3562 | The drift current is also
there under forward bias but it is negligible (mA) when compared with
current due to injected carriers which is usually in mA The diode reverse current is not very much dependent on the applied
voltage Even a small voltage is sufficient to sweep the minority carriers
from one side of the junction to the other side of the junction The current
FIGURE 14 |
9 | 3560-3563 | The diode reverse current is not very much dependent on the applied
voltage Even a small voltage is sufficient to sweep the minority carriers
from one side of the junction to the other side of the junction The current
FIGURE 14 13 (a) p-n
junction diode under forward
bias, (b) Barrier potential
(1) without battery, (2) Low
battery voltage, and (3) High
voltage battery |
9 | 3561-3564 | Even a small voltage is sufficient to sweep the minority carriers
from one side of the junction to the other side of the junction The current
FIGURE 14 13 (a) p-n
junction diode under forward
bias, (b) Barrier potential
(1) without battery, (2) Low
battery voltage, and (3) High
voltage battery FIGURE 14 |
9 | 3562-3565 | The current
FIGURE 14 13 (a) p-n
junction diode under forward
bias, (b) Barrier potential
(1) without battery, (2) Low
battery voltage, and (3) High
voltage battery FIGURE 14 14 Forward bias
minority carrier injection |
9 | 3563-3566 | 13 (a) p-n
junction diode under forward
bias, (b) Barrier potential
(1) without battery, (2) Low
battery voltage, and (3) High
voltage battery FIGURE 14 14 Forward bias
minority carrier injection Rationalised 2023-24
Physics
336
is not limited by the magnitude of the applied voltage but is
limited due to the concentration of the minority carrier on either
side of the junction |
9 | 3564-3567 | FIGURE 14 14 Forward bias
minority carrier injection Rationalised 2023-24
Physics
336
is not limited by the magnitude of the applied voltage but is
limited due to the concentration of the minority carrier on either
side of the junction The current under reverse bias is essentially voltage
independent upto a critical reverse bias voltage, known as
breakdown voltage (Vbr ) |
9 | 3565-3568 | 14 Forward bias
minority carrier injection Rationalised 2023-24
Physics
336
is not limited by the magnitude of the applied voltage but is
limited due to the concentration of the minority carrier on either
side of the junction The current under reverse bias is essentially voltage
independent upto a critical reverse bias voltage, known as
breakdown voltage (Vbr ) When V = Vbr, the diode reverse current
increases sharply |
9 | 3566-3569 | Rationalised 2023-24
Physics
336
is not limited by the magnitude of the applied voltage but is
limited due to the concentration of the minority carrier on either
side of the junction The current under reverse bias is essentially voltage
independent upto a critical reverse bias voltage, known as
breakdown voltage (Vbr ) When V = Vbr, the diode reverse current
increases sharply Even a slight increase in the bias voltage causes
large change in the current |
9 | 3567-3570 | The current under reverse bias is essentially voltage
independent upto a critical reverse bias voltage, known as
breakdown voltage (Vbr ) When V = Vbr, the diode reverse current
increases sharply Even a slight increase in the bias voltage causes
large change in the current If the reverse current is not limited by
an external circuit below the rated value (specified by the
manufacturer) the p-n junction will get destroyed |
9 | 3568-3571 | When V = Vbr, the diode reverse current
increases sharply Even a slight increase in the bias voltage causes
large change in the current If the reverse current is not limited by
an external circuit below the rated value (specified by the
manufacturer) the p-n junction will get destroyed Once it exceeds
the rated value, the diode gets destroyed due to overheating |
9 | 3569-3572 | Even a slight increase in the bias voltage causes
large change in the current If the reverse current is not limited by
an external circuit below the rated value (specified by the
manufacturer) the p-n junction will get destroyed Once it exceeds
the rated value, the diode gets destroyed due to overheating This
can happen even for the diode under forward bias, if the forward
current exceeds the rated value |
9 | 3570-3573 | If the reverse current is not limited by
an external circuit below the rated value (specified by the
manufacturer) the p-n junction will get destroyed Once it exceeds
the rated value, the diode gets destroyed due to overheating This
can happen even for the diode under forward bias, if the forward
current exceeds the rated value The circuit arrangement for studying the V-I characteristics
of a diode, (i |
9 | 3571-3574 | Once it exceeds
the rated value, the diode gets destroyed due to overheating This
can happen even for the diode under forward bias, if the forward
current exceeds the rated value The circuit arrangement for studying the V-I characteristics
of a diode, (i e |
9 | 3572-3575 | This
can happen even for the diode under forward bias, if the forward
current exceeds the rated value The circuit arrangement for studying the V-I characteristics
of a diode, (i e , the variation of current as a function of applied
voltage) are shown in Fig |
9 | 3573-3576 | The circuit arrangement for studying the V-I characteristics
of a diode, (i e , the variation of current as a function of applied
voltage) are shown in Fig 14 |
9 | 3574-3577 | e , the variation of current as a function of applied
voltage) are shown in Fig 14 16(a) and (b) |
9 | 3575-3578 | , the variation of current as a function of applied
voltage) are shown in Fig 14 16(a) and (b) The battery is connected
to the diode through a potentiometer (or reheostat) so that the
applied voltage to the diode can be changed |
9 | 3576-3579 | 14 16(a) and (b) The battery is connected
to the diode through a potentiometer (or reheostat) so that the
applied voltage to the diode can be changed For different values
of voltages, the value of the current is noted |
9 | 3577-3580 | 16(a) and (b) The battery is connected
to the diode through a potentiometer (or reheostat) so that the
applied voltage to the diode can be changed For different values
of voltages, the value of the current is noted A graph between V
and I is obtained as in Fig |
9 | 3578-3581 | The battery is connected
to the diode through a potentiometer (or reheostat) so that the
applied voltage to the diode can be changed For different values
of voltages, the value of the current is noted A graph between V
and I is obtained as in Fig 14 |
9 | 3579-3582 | For different values
of voltages, the value of the current is noted A graph between V
and I is obtained as in Fig 14 16(c) |
9 | 3580-3583 | A graph between V
and I is obtained as in Fig 14 16(c) Note that in forward bias
measurement, we use a milliammeter since the expected current is large
(as explained in the earlier section) while a micrometer is used in reverse
bias to measure the current |
9 | 3581-3584 | 14 16(c) Note that in forward bias
measurement, we use a milliammeter since the expected current is large
(as explained in the earlier section) while a micrometer is used in reverse
bias to measure the current You can see in Fig |
9 | 3582-3585 | 16(c) Note that in forward bias
measurement, we use a milliammeter since the expected current is large
(as explained in the earlier section) while a micrometer is used in reverse
bias to measure the current You can see in Fig 14 |
9 | 3583-3586 | Note that in forward bias
measurement, we use a milliammeter since the expected current is large
(as explained in the earlier section) while a micrometer is used in reverse
bias to measure the current You can see in Fig 14 16(c) that in forward
FIGURE 14 |
9 | 3584-3587 | You can see in Fig 14 16(c) that in forward
FIGURE 14 15 (a) Diode
under reverse bias,
(b) Barrier potential under
reverse bias |
9 | 3585-3588 | 14 16(c) that in forward
FIGURE 14 15 (a) Diode
under reverse bias,
(b) Barrier potential under
reverse bias FIGURE 14 |
9 | 3586-3589 | 16(c) that in forward
FIGURE 14 15 (a) Diode
under reverse bias,
(b) Barrier potential under
reverse bias FIGURE 14 16 Experimental circuit arrangement for studying V-I characteristics of
a p-n junction diode (a) in forward bias, (b) in reverse bias |
9 | 3587-3590 | 15 (a) Diode
under reverse bias,
(b) Barrier potential under
reverse bias FIGURE 14 16 Experimental circuit arrangement for studying V-I characteristics of
a p-n junction diode (a) in forward bias, (b) in reverse bias (c) Typical V-I
characteristics of a silicon diode |
9 | 3588-3591 | FIGURE 14 16 Experimental circuit arrangement for studying V-I characteristics of
a p-n junction diode (a) in forward bias, (b) in reverse bias (c) Typical V-I
characteristics of a silicon diode Rationalised 2023-24
337
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
EXAMPLE 14 |
9 | 3589-3592 | 16 Experimental circuit arrangement for studying V-I characteristics of
a p-n junction diode (a) in forward bias, (b) in reverse bias (c) Typical V-I
characteristics of a silicon diode Rationalised 2023-24
337
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
EXAMPLE 14 4
bias, the current first increases very slowly, almost negligibly, till the
voltage across the diode crosses a certain value |
9 | 3590-3593 | (c) Typical V-I
characteristics of a silicon diode Rationalised 2023-24
337
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
EXAMPLE 14 4
bias, the current first increases very slowly, almost negligibly, till the
voltage across the diode crosses a certain value After the characteristic
voltage, the diode current increases significantly (exponentially), even for
a very small increase in the diode bias voltage |
9 | 3591-3594 | Rationalised 2023-24
337
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
EXAMPLE 14 4
bias, the current first increases very slowly, almost negligibly, till the
voltage across the diode crosses a certain value After the characteristic
voltage, the diode current increases significantly (exponentially), even for
a very small increase in the diode bias voltage This voltage is called the
threshold voltage or cut-in voltage (~0 |
9 | 3592-3595 | 4
bias, the current first increases very slowly, almost negligibly, till the
voltage across the diode crosses a certain value After the characteristic
voltage, the diode current increases significantly (exponentially), even for
a very small increase in the diode bias voltage This voltage is called the
threshold voltage or cut-in voltage (~0 2V for germanium diode and
~0 |
9 | 3593-3596 | After the characteristic
voltage, the diode current increases significantly (exponentially), even for
a very small increase in the diode bias voltage This voltage is called the
threshold voltage or cut-in voltage (~0 2V for germanium diode and
~0 7 V for silicon diode) |
9 | 3594-3597 | This voltage is called the
threshold voltage or cut-in voltage (~0 2V for germanium diode and
~0 7 V for silicon diode) For the diode in reverse bias, the current is very small (~mA) and almost
remains constant with change in bias |
9 | 3595-3598 | 2V for germanium diode and
~0 7 V for silicon diode) For the diode in reverse bias, the current is very small (~mA) and almost
remains constant with change in bias It is called reverse saturation
current |
9 | 3596-3599 | 7 V for silicon diode) For the diode in reverse bias, the current is very small (~mA) and almost
remains constant with change in bias It is called reverse saturation
current However, for special cases, at very high reverse bias (break down
voltage), the current suddenly increases |
9 | 3597-3600 | For the diode in reverse bias, the current is very small (~mA) and almost
remains constant with change in bias It is called reverse saturation
current However, for special cases, at very high reverse bias (break down
voltage), the current suddenly increases This special action of the diode
is discussed later in Section 14 |
9 | 3598-3601 | It is called reverse saturation
current However, for special cases, at very high reverse bias (break down
voltage), the current suddenly increases This special action of the diode
is discussed later in Section 14 8 |
9 | 3599-3602 | However, for special cases, at very high reverse bias (break down
voltage), the current suddenly increases This special action of the diode
is discussed later in Section 14 8 The general purpose diode are not
used beyond the reverse saturation current region |
9 | 3600-3603 | This special action of the diode
is discussed later in Section 14 8 The general purpose diode are not
used beyond the reverse saturation current region The above discussion shows that the p-n junction diode primerly
allows the flow of current only in one direction (forward bias) |
9 | 3601-3604 | 8 The general purpose diode are not
used beyond the reverse saturation current region The above discussion shows that the p-n junction diode primerly
allows the flow of current only in one direction (forward bias) The forward
bias resistance is low as compared to the reverse bias resistance |
9 | 3602-3605 | The general purpose diode are not
used beyond the reverse saturation current region The above discussion shows that the p-n junction diode primerly
allows the flow of current only in one direction (forward bias) The forward
bias resistance is low as compared to the reverse bias resistance This
property is used for rectification of ac voltages as discussed in the next
section |
9 | 3603-3606 | The above discussion shows that the p-n junction diode primerly
allows the flow of current only in one direction (forward bias) The forward
bias resistance is low as compared to the reverse bias resistance This
property is used for rectification of ac voltages as discussed in the next
section For diodes, we define a quantity called dynamic resistance as
the ratio of small change in voltage DV to a small change in current DI:
d
V
r
I
∆
= ∆
(14 |
9 | 3604-3607 | The forward
bias resistance is low as compared to the reverse bias resistance This
property is used for rectification of ac voltages as discussed in the next
section For diodes, we define a quantity called dynamic resistance as
the ratio of small change in voltage DV to a small change in current DI:
d
V
r
I
∆
= ∆
(14 6)
Example 14 |
9 | 3605-3608 | This
property is used for rectification of ac voltages as discussed in the next
section For diodes, we define a quantity called dynamic resistance as
the ratio of small change in voltage DV to a small change in current DI:
d
V
r
I
∆
= ∆
(14 6)
Example 14 4 The V-I characteristic of a silicon diode is shown in
the Fig |
9 | 3606-3609 | For diodes, we define a quantity called dynamic resistance as
the ratio of small change in voltage DV to a small change in current DI:
d
V
r
I
∆
= ∆
(14 6)
Example 14 4 The V-I characteristic of a silicon diode is shown in
the Fig 14 |
9 | 3607-3610 | 6)
Example 14 4 The V-I characteristic of a silicon diode is shown in
the Fig 14 17 |
9 | 3608-3611 | 4 The V-I characteristic of a silicon diode is shown in
the Fig 14 17 Calculate the resistance of the diode at (a) ID = 15 mA
and (b) VD = –10 V |
9 | 3609-3612 | 14 17 Calculate the resistance of the diode at (a) ID = 15 mA
and (b) VD = –10 V FIGURE 14 |
9 | 3610-3613 | 17 Calculate the resistance of the diode at (a) ID = 15 mA
and (b) VD = –10 V FIGURE 14 17
Solution Considering the diode characteristics as a straight line
between I = 10 mA to I = 20 mA passing through the origin, we can
calculate the resistance using Ohm’s law |
9 | 3611-3614 | Calculate the resistance of the diode at (a) ID = 15 mA
and (b) VD = –10 V FIGURE 14 17
Solution Considering the diode characteristics as a straight line
between I = 10 mA to I = 20 mA passing through the origin, we can
calculate the resistance using Ohm’s law (a) From the curve, at I = 20 mA, V = 0 |
9 | 3612-3615 | FIGURE 14 17
Solution Considering the diode characteristics as a straight line
between I = 10 mA to I = 20 mA passing through the origin, we can
calculate the resistance using Ohm’s law (a) From the curve, at I = 20 mA, V = 0 8 V; I = 10 mA, V = 0 |
9 | 3613-3616 | 17
Solution Considering the diode characteristics as a straight line
between I = 10 mA to I = 20 mA passing through the origin, we can
calculate the resistance using Ohm’s law (a) From the curve, at I = 20 mA, V = 0 8 V; I = 10 mA, V = 0 7 V
rfb = DV/DI = 0 |
9 | 3614-3617 | (a) From the curve, at I = 20 mA, V = 0 8 V; I = 10 mA, V = 0 7 V
rfb = DV/DI = 0 1V/10 mA = 10 W
(b) From the curve at V = –10 V, I = –1 mA,
Therefore,
rrb = 10 V/1mA= 1 |
9 | 3615-3618 | 8 V; I = 10 mA, V = 0 7 V
rfb = DV/DI = 0 1V/10 mA = 10 W
(b) From the curve at V = –10 V, I = –1 mA,
Therefore,
rrb = 10 V/1mA= 1 0 × 107 W
Rationalised 2023-24
Physics
338
14 |
9 | 3616-3619 | 7 V
rfb = DV/DI = 0 1V/10 mA = 10 W
(b) From the curve at V = –10 V, I = –1 mA,
Therefore,
rrb = 10 V/1mA= 1 0 × 107 W
Rationalised 2023-24
Physics
338
14 7 APPLICATION OF JUNCTION DIODE AS A RECTIFIER
From the V-I characteristic of a junction diode we see that it allows current
to pass only when it is forward biased |
9 | 3617-3620 | 1V/10 mA = 10 W
(b) From the curve at V = –10 V, I = –1 mA,
Therefore,
rrb = 10 V/1mA= 1 0 × 107 W
Rationalised 2023-24
Physics
338
14 7 APPLICATION OF JUNCTION DIODE AS A RECTIFIER
From the V-I characteristic of a junction diode we see that it allows current
to pass only when it is forward biased So if an alternating voltage is
applied across a diode the current flows only in that part of the cycle
when the diode is forward biased |
9 | 3618-3621 | 0 × 107 W
Rationalised 2023-24
Physics
338
14 7 APPLICATION OF JUNCTION DIODE AS A RECTIFIER
From the V-I characteristic of a junction diode we see that it allows current
to pass only when it is forward biased So if an alternating voltage is
applied across a diode the current flows only in that part of the cycle
when the diode is forward biased This property
is used to rectify alternating voltages and the
circuit used for this purpose is called a rectifier |
9 | 3619-3622 | 7 APPLICATION OF JUNCTION DIODE AS A RECTIFIER
From the V-I characteristic of a junction diode we see that it allows current
to pass only when it is forward biased So if an alternating voltage is
applied across a diode the current flows only in that part of the cycle
when the diode is forward biased This property
is used to rectify alternating voltages and the
circuit used for this purpose is called a rectifier If an alternating voltage is applied across a
diode in series with a load, a pulsating voltage will
appear across the load only during the half cycles
of the ac input during which the diode is forward
biased |
9 | 3620-3623 | So if an alternating voltage is
applied across a diode the current flows only in that part of the cycle
when the diode is forward biased This property
is used to rectify alternating voltages and the
circuit used for this purpose is called a rectifier If an alternating voltage is applied across a
diode in series with a load, a pulsating voltage will
appear across the load only during the half cycles
of the ac input during which the diode is forward
biased Such rectifier circuit, as shown in
Fig |
9 | 3621-3624 | This property
is used to rectify alternating voltages and the
circuit used for this purpose is called a rectifier If an alternating voltage is applied across a
diode in series with a load, a pulsating voltage will
appear across the load only during the half cycles
of the ac input during which the diode is forward
biased Such rectifier circuit, as shown in
Fig 14 |
9 | 3622-3625 | If an alternating voltage is applied across a
diode in series with a load, a pulsating voltage will
appear across the load only during the half cycles
of the ac input during which the diode is forward
biased Such rectifier circuit, as shown in
Fig 14 18, is called a half-wave rectifier |
9 | 3623-3626 | Such rectifier circuit, as shown in
Fig 14 18, is called a half-wave rectifier The
secondary of a transformer supplies the desired
ac voltage across terminals A and B |
9 | 3624-3627 | 14 18, is called a half-wave rectifier The
secondary of a transformer supplies the desired
ac voltage across terminals A and B When the
voltage at A is positive, the diode is forward biased
and it conducts |
9 | 3625-3628 | 18, is called a half-wave rectifier The
secondary of a transformer supplies the desired
ac voltage across terminals A and B When the
voltage at A is positive, the diode is forward biased
and it conducts When A is negative, the diode is
reverse-biased and it does not conduct |
9 | 3626-3629 | The
secondary of a transformer supplies the desired
ac voltage across terminals A and B When the
voltage at A is positive, the diode is forward biased
and it conducts When A is negative, the diode is
reverse-biased and it does not conduct The reverse
saturation current of a diode is negligible and can
be considered equal to zero for practical purposes |
9 | 3627-3630 | When the
voltage at A is positive, the diode is forward biased
and it conducts When A is negative, the diode is
reverse-biased and it does not conduct The reverse
saturation current of a diode is negligible and can
be considered equal to zero for practical purposes (The reverse breakdown voltage of the diode must
be sufficiently higher than the peak ac voltage at
the secondary of the transformer to protect the
diode from reverse breakdown |
9 | 3628-3631 | When A is negative, the diode is
reverse-biased and it does not conduct The reverse
saturation current of a diode is negligible and can
be considered equal to zero for practical purposes (The reverse breakdown voltage of the diode must
be sufficiently higher than the peak ac voltage at
the secondary of the transformer to protect the
diode from reverse breakdown )
Therefore, in the positive half-cycle of ac there
is a current through the load resistor RL and we
get an output voltage, as shown in Fig |
9 | 3629-3632 | The reverse
saturation current of a diode is negligible and can
be considered equal to zero for practical purposes (The reverse breakdown voltage of the diode must
be sufficiently higher than the peak ac voltage at
the secondary of the transformer to protect the
diode from reverse breakdown )
Therefore, in the positive half-cycle of ac there
is a current through the load resistor RL and we
get an output voltage, as shown in Fig 14 |
9 | 3630-3633 | (The reverse breakdown voltage of the diode must
be sufficiently higher than the peak ac voltage at
the secondary of the transformer to protect the
diode from reverse breakdown )
Therefore, in the positive half-cycle of ac there
is a current through the load resistor RL and we
get an output voltage, as shown in Fig 14 18(b),
whereas there is no current in the negative half-
cycle |
9 | 3631-3634 | )
Therefore, in the positive half-cycle of ac there
is a current through the load resistor RL and we
get an output voltage, as shown in Fig 14 18(b),
whereas there is no current in the negative half-
cycle In the next positive half-cycle, again we get
the output voltage |
9 | 3632-3635 | 14 18(b),
whereas there is no current in the negative half-
cycle In the next positive half-cycle, again we get
the output voltage Thus, the output voltage, though still varying, is
restricted to only one direction and is said to be rectified |
9 | 3633-3636 | 18(b),
whereas there is no current in the negative half-
cycle In the next positive half-cycle, again we get
the output voltage Thus, the output voltage, though still varying, is
restricted to only one direction and is said to be rectified Since the
rectified output of this circuit is only for half of the input ac wave it is
called as half-wave rectifier |
9 | 3634-3637 | In the next positive half-cycle, again we get
the output voltage Thus, the output voltage, though still varying, is
restricted to only one direction and is said to be rectified Since the
rectified output of this circuit is only for half of the input ac wave it is
called as half-wave rectifier The circuit using two diodes, shown in Fig |
9 | 3635-3638 | Thus, the output voltage, though still varying, is
restricted to only one direction and is said to be rectified Since the
rectified output of this circuit is only for half of the input ac wave it is
called as half-wave rectifier The circuit using two diodes, shown in Fig 14 |
9 | 3636-3639 | Since the
rectified output of this circuit is only for half of the input ac wave it is
called as half-wave rectifier The circuit using two diodes, shown in Fig 14 19(a), gives output
rectified voltage corresponding to both the positive as well as negative
half of the ac cycle |
9 | 3637-3640 | The circuit using two diodes, shown in Fig 14 19(a), gives output
rectified voltage corresponding to both the positive as well as negative
half of the ac cycle Hence, it is known as full-wave rectifier |
9 | 3638-3641 | 14 19(a), gives output
rectified voltage corresponding to both the positive as well as negative
half of the ac cycle Hence, it is known as full-wave rectifier Here the
p-side of the two diodes are connected to the ends of the secondary of the
transformer |
Subsets and Splits