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9 | 3239-3242 | Therefore, the resistance of such materials
is low or the conductivity is high FIGURE 14 2 Difference between energy bands of (a) metals,
(b) insulators and (c) semiconductors FIGURE 14 |
9 | 3240-3243 | FIGURE 14 2 Difference between energy bands of (a) metals,
(b) insulators and (c) semiconductors FIGURE 14 1 The energy band positions in a
semiconductor at 0 K |
9 | 3241-3244 | 2 Difference between energy bands of (a) metals,
(b) insulators and (c) semiconductors FIGURE 14 1 The energy band positions in a
semiconductor at 0 K The upper band, called the
conduction band, consists of infinitely large number
of closely spaced energy states |
9 | 3242-3245 | FIGURE 14 1 The energy band positions in a
semiconductor at 0 K The upper band, called the
conduction band, consists of infinitely large number
of closely spaced energy states The lower band,
called the valence band, consists of closely spaced
completely filled energy states |
9 | 3243-3246 | 1 The energy band positions in a
semiconductor at 0 K The upper band, called the
conduction band, consists of infinitely large number
of closely spaced energy states The lower band,
called the valence band, consists of closely spaced
completely filled energy states Rationalised 2023-24
327
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
Case II: In this case, as shown in Fig |
9 | 3244-3247 | The upper band, called the
conduction band, consists of infinitely large number
of closely spaced energy states The lower band,
called the valence band, consists of closely spaced
completely filled energy states Rationalised 2023-24
327
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
Case II: In this case, as shown in Fig 14 |
9 | 3245-3248 | The lower band,
called the valence band, consists of closely spaced
completely filled energy states Rationalised 2023-24
327
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
Case II: In this case, as shown in Fig 14 2(b), a large band gap Eg exists
(Eg > 3 eV) |
9 | 3246-3249 | Rationalised 2023-24
327
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
Case II: In this case, as shown in Fig 14 2(b), a large band gap Eg exists
(Eg > 3 eV) There are no electrons in the conduction band, and therefore
no electrical conduction is possible |
9 | 3247-3250 | 14 2(b), a large band gap Eg exists
(Eg > 3 eV) There are no electrons in the conduction band, and therefore
no electrical conduction is possible Note that the energy gap is so large
that electrons cannot be excited from the valence band to the conduction
band by thermal excitation |
9 | 3248-3251 | 2(b), a large band gap Eg exists
(Eg > 3 eV) There are no electrons in the conduction band, and therefore
no electrical conduction is possible Note that the energy gap is so large
that electrons cannot be excited from the valence band to the conduction
band by thermal excitation This is the case of insulators |
9 | 3249-3252 | There are no electrons in the conduction band, and therefore
no electrical conduction is possible Note that the energy gap is so large
that electrons cannot be excited from the valence band to the conduction
band by thermal excitation This is the case of insulators Case III: This situation is shown in Fig |
9 | 3250-3253 | Note that the energy gap is so large
that electrons cannot be excited from the valence band to the conduction
band by thermal excitation This is the case of insulators Case III: This situation is shown in Fig 14 |
9 | 3251-3254 | This is the case of insulators Case III: This situation is shown in Fig 14 2(c) |
9 | 3252-3255 | Case III: This situation is shown in Fig 14 2(c) Here a finite but small
band gap (Eg < 3 eV) exists |
9 | 3253-3256 | 14 2(c) Here a finite but small
band gap (Eg < 3 eV) exists Because of the small band gap, at room
temperature some electrons from valence band can acquire enough
energy to cross the energy gap and enter the conduction band |
9 | 3254-3257 | 2(c) Here a finite but small
band gap (Eg < 3 eV) exists Because of the small band gap, at room
temperature some electrons from valence band can acquire enough
energy to cross the energy gap and enter the conduction band These
electrons (though small in numbers) can move in the conduction band |
9 | 3255-3258 | Here a finite but small
band gap (Eg < 3 eV) exists Because of the small band gap, at room
temperature some electrons from valence band can acquire enough
energy to cross the energy gap and enter the conduction band These
electrons (though small in numbers) can move in the conduction band Hence, the resistance of semiconductors is not as high as that of the
insulators |
9 | 3256-3259 | Because of the small band gap, at room
temperature some electrons from valence band can acquire enough
energy to cross the energy gap and enter the conduction band These
electrons (though small in numbers) can move in the conduction band Hence, the resistance of semiconductors is not as high as that of the
insulators In this section we have made a broad classification of metals,
conductors and semiconductors |
9 | 3257-3260 | These
electrons (though small in numbers) can move in the conduction band Hence, the resistance of semiconductors is not as high as that of the
insulators In this section we have made a broad classification of metals,
conductors and semiconductors In the section which follows you will
learn the conduction process in semiconductors |
9 | 3258-3261 | Hence, the resistance of semiconductors is not as high as that of the
insulators In this section we have made a broad classification of metals,
conductors and semiconductors In the section which follows you will
learn the conduction process in semiconductors 14 |
9 | 3259-3262 | In this section we have made a broad classification of metals,
conductors and semiconductors In the section which follows you will
learn the conduction process in semiconductors 14 3 INTRINSIC SEMICONDUCTOR
We shall take the most common case of Ge and Si whose
lattice structure is shown in Fig |
9 | 3260-3263 | In the section which follows you will
learn the conduction process in semiconductors 14 3 INTRINSIC SEMICONDUCTOR
We shall take the most common case of Ge and Si whose
lattice structure is shown in Fig 14 |
9 | 3261-3264 | 14 3 INTRINSIC SEMICONDUCTOR
We shall take the most common case of Ge and Si whose
lattice structure is shown in Fig 14 3 |
9 | 3262-3265 | 3 INTRINSIC SEMICONDUCTOR
We shall take the most common case of Ge and Si whose
lattice structure is shown in Fig 14 3 These structures
are called the diamond-like structures |
9 | 3263-3266 | 14 3 These structures
are called the diamond-like structures Each atom is
surrounded by four nearest neighbours |
9 | 3264-3267 | 3 These structures
are called the diamond-like structures Each atom is
surrounded by four nearest neighbours We know that
Si and Ge have four valence electrons |
9 | 3265-3268 | These structures
are called the diamond-like structures Each atom is
surrounded by four nearest neighbours We know that
Si and Ge have four valence electrons In its crystalline
structure, every Si or Ge atom tends to share one of its
four valence electrons with each of its four nearest
neighbour atoms, and also to take share of one electron
from each such neighbour |
9 | 3266-3269 | Each atom is
surrounded by four nearest neighbours We know that
Si and Ge have four valence electrons In its crystalline
structure, every Si or Ge atom tends to share one of its
four valence electrons with each of its four nearest
neighbour atoms, and also to take share of one electron
from each such neighbour These shared electron pairs
are referred to as forming a covalent bond or simply a
valence bond |
9 | 3267-3270 | We know that
Si and Ge have four valence electrons In its crystalline
structure, every Si or Ge atom tends to share one of its
four valence electrons with each of its four nearest
neighbour atoms, and also to take share of one electron
from each such neighbour These shared electron pairs
are referred to as forming a covalent bond or simply a
valence bond The two shared electrons can be assumed
to shuttle back-and-forth between the associated atoms
holding them together strongly |
9 | 3268-3271 | In its crystalline
structure, every Si or Ge atom tends to share one of its
four valence electrons with each of its four nearest
neighbour atoms, and also to take share of one electron
from each such neighbour These shared electron pairs
are referred to as forming a covalent bond or simply a
valence bond The two shared electrons can be assumed
to shuttle back-and-forth between the associated atoms
holding them together strongly Figure 14 |
9 | 3269-3272 | These shared electron pairs
are referred to as forming a covalent bond or simply a
valence bond The two shared electrons can be assumed
to shuttle back-and-forth between the associated atoms
holding them together strongly Figure 14 4 schematically
shows the 2-dimensional representation of Si or Ge
structure shown in Fig |
9 | 3270-3273 | The two shared electrons can be assumed
to shuttle back-and-forth between the associated atoms
holding them together strongly Figure 14 4 schematically
shows the 2-dimensional representation of Si or Ge
structure shown in Fig 14 |
9 | 3271-3274 | Figure 14 4 schematically
shows the 2-dimensional representation of Si or Ge
structure shown in Fig 14 3 which overemphasises the
covalent bond |
9 | 3272-3275 | 4 schematically
shows the 2-dimensional representation of Si or Ge
structure shown in Fig 14 3 which overemphasises the
covalent bond It shows an idealised picture in which no
bonds are broken (all bonds are intact) |
9 | 3273-3276 | 14 3 which overemphasises the
covalent bond It shows an idealised picture in which no
bonds are broken (all bonds are intact) Such a situation
arises at low temperatures |
9 | 3274-3277 | 3 which overemphasises the
covalent bond It shows an idealised picture in which no
bonds are broken (all bonds are intact) Such a situation
arises at low temperatures As the temperature increases,
more thermal energy becomes available to these electrons and some of
these electrons may break–away (becoming free electrons contributing to
conduction) |
9 | 3275-3278 | It shows an idealised picture in which no
bonds are broken (all bonds are intact) Such a situation
arises at low temperatures As the temperature increases,
more thermal energy becomes available to these electrons and some of
these electrons may break–away (becoming free electrons contributing to
conduction) The thermal energy effectively ionises only a few atoms in the
crystalline lattice and creates a vacancy in the bond as shown in Fig |
9 | 3276-3279 | Such a situation
arises at low temperatures As the temperature increases,
more thermal energy becomes available to these electrons and some of
these electrons may break–away (becoming free electrons contributing to
conduction) The thermal energy effectively ionises only a few atoms in the
crystalline lattice and creates a vacancy in the bond as shown in Fig 14 |
9 | 3277-3280 | As the temperature increases,
more thermal energy becomes available to these electrons and some of
these electrons may break–away (becoming free electrons contributing to
conduction) The thermal energy effectively ionises only a few atoms in the
crystalline lattice and creates a vacancy in the bond as shown in Fig 14 5(a) |
9 | 3278-3281 | The thermal energy effectively ionises only a few atoms in the
crystalline lattice and creates a vacancy in the bond as shown in Fig 14 5(a) The neighbourhood, from which the free electron (with charge –q) has come
out leaves a vacancy with an effective charge (+q) |
9 | 3279-3282 | 14 5(a) The neighbourhood, from which the free electron (with charge –q) has come
out leaves a vacancy with an effective charge (+q) This vacancy with the
effective positive electronic charge is called a hole |
9 | 3280-3283 | 5(a) The neighbourhood, from which the free electron (with charge –q) has come
out leaves a vacancy with an effective charge (+q) This vacancy with the
effective positive electronic charge is called a hole The hole behaves as an
apparent free particle with effective positive charge |
9 | 3281-3284 | The neighbourhood, from which the free electron (with charge –q) has come
out leaves a vacancy with an effective charge (+q) This vacancy with the
effective positive electronic charge is called a hole The hole behaves as an
apparent free particle with effective positive charge In intrinsic semiconductors, the number of free electrons, ne is equal to
the number of holes, nh |
9 | 3282-3285 | This vacancy with the
effective positive electronic charge is called a hole The hole behaves as an
apparent free particle with effective positive charge In intrinsic semiconductors, the number of free electrons, ne is equal to
the number of holes, nh That is
ne = nh = ni
(14 |
9 | 3283-3286 | The hole behaves as an
apparent free particle with effective positive charge In intrinsic semiconductors, the number of free electrons, ne is equal to
the number of holes, nh That is
ne = nh = ni
(14 1)
where ni is called intrinsic carrier concentration |
9 | 3284-3287 | In intrinsic semiconductors, the number of free electrons, ne is equal to
the number of holes, nh That is
ne = nh = ni
(14 1)
where ni is called intrinsic carrier concentration Semiconductors posses the unique property in which, apart from
electrons, the holes also move |
9 | 3285-3288 | That is
ne = nh = ni
(14 1)
where ni is called intrinsic carrier concentration Semiconductors posses the unique property in which, apart from
electrons, the holes also move Suppose there is a hole at site 1 as shown
FIGURE 14 |
9 | 3286-3289 | 1)
where ni is called intrinsic carrier concentration Semiconductors posses the unique property in which, apart from
electrons, the holes also move Suppose there is a hole at site 1 as shown
FIGURE 14 3 Three-dimensional dia-
mond-like crystal structure for Carbon,
Silicon or Germanium with
respective lattice spacing a equal
to 3 |
9 | 3287-3290 | Semiconductors posses the unique property in which, apart from
electrons, the holes also move Suppose there is a hole at site 1 as shown
FIGURE 14 3 Three-dimensional dia-
mond-like crystal structure for Carbon,
Silicon or Germanium with
respective lattice spacing a equal
to 3 56, 5 |
9 | 3288-3291 | Suppose there is a hole at site 1 as shown
FIGURE 14 3 Three-dimensional dia-
mond-like crystal structure for Carbon,
Silicon or Germanium with
respective lattice spacing a equal
to 3 56, 5 43 and 5 |
9 | 3289-3292 | 3 Three-dimensional dia-
mond-like crystal structure for Carbon,
Silicon or Germanium with
respective lattice spacing a equal
to 3 56, 5 43 and 5 66 Å |
9 | 3290-3293 | 56, 5 43 and 5 66 Å Rationalised 2023-24
Physics
328
in Fig |
9 | 3291-3294 | 43 and 5 66 Å Rationalised 2023-24
Physics
328
in Fig 14 |
9 | 3292-3295 | 66 Å Rationalised 2023-24
Physics
328
in Fig 14 5(a) |
9 | 3293-3296 | Rationalised 2023-24
Physics
328
in Fig 14 5(a) The movement of holes can be
visualised as shown in Fig |
9 | 3294-3297 | 14 5(a) The movement of holes can be
visualised as shown in Fig 14 |
9 | 3295-3298 | 5(a) The movement of holes can be
visualised as shown in Fig 14 5(b) |
9 | 3296-3299 | The movement of holes can be
visualised as shown in Fig 14 5(b) An electron
from the covalent bond at site 2 may jump to
the vacant site 1 (hole) |
9 | 3297-3300 | 14 5(b) An electron
from the covalent bond at site 2 may jump to
the vacant site 1 (hole) Thus, after such a jump,
the hole is at site 2 and the site 1 has now an
electron |
9 | 3298-3301 | 5(b) An electron
from the covalent bond at site 2 may jump to
the vacant site 1 (hole) Thus, after such a jump,
the hole is at site 2 and the site 1 has now an
electron Therefore, apparently, the hole has
moved from site 1 to site 2 |
9 | 3299-3302 | An electron
from the covalent bond at site 2 may jump to
the vacant site 1 (hole) Thus, after such a jump,
the hole is at site 2 and the site 1 has now an
electron Therefore, apparently, the hole has
moved from site 1 to site 2 Note that the electron
originally set free [Fig |
9 | 3300-3303 | Thus, after such a jump,
the hole is at site 2 and the site 1 has now an
electron Therefore, apparently, the hole has
moved from site 1 to site 2 Note that the electron
originally set free [Fig 14 |
9 | 3301-3304 | Therefore, apparently, the hole has
moved from site 1 to site 2 Note that the electron
originally set free [Fig 14 5(a)] is not involved
in this process of hole motion |
9 | 3302-3305 | Note that the electron
originally set free [Fig 14 5(a)] is not involved
in this process of hole motion The free electron
moves completely independently as conduction
electron and gives rise to an electron current, Ie
under an applied electric field |
9 | 3303-3306 | 14 5(a)] is not involved
in this process of hole motion The free electron
moves completely independently as conduction
electron and gives rise to an electron current, Ie
under an applied electric field Remember that
the motion of hole is only a convenient way of
describing the actual motion of bound electrons,
whenever there is an empty bond anywhere in
the crystal |
9 | 3304-3307 | 5(a)] is not involved
in this process of hole motion The free electron
moves completely independently as conduction
electron and gives rise to an electron current, Ie
under an applied electric field Remember that
the motion of hole is only a convenient way of
describing the actual motion of bound electrons,
whenever there is an empty bond anywhere in
the crystal Under the action of an electric field,
these holes move towards negative potential
giving the hole current, Ih |
9 | 3305-3308 | The free electron
moves completely independently as conduction
electron and gives rise to an electron current, Ie
under an applied electric field Remember that
the motion of hole is only a convenient way of
describing the actual motion of bound electrons,
whenever there is an empty bond anywhere in
the crystal Under the action of an electric field,
these holes move towards negative potential
giving the hole current, Ih The total current, I is
thus the sum of the electron current Ie and the
hole current Ih:
I = Ie + Ih
(14 |
9 | 3306-3309 | Remember that
the motion of hole is only a convenient way of
describing the actual motion of bound electrons,
whenever there is an empty bond anywhere in
the crystal Under the action of an electric field,
these holes move towards negative potential
giving the hole current, Ih The total current, I is
thus the sum of the electron current Ie and the
hole current Ih:
I = Ie + Ih
(14 2)
It may be noted that apart from the process of generation of conduction
electrons and holes, a simultaneous process of recombination occurs in
which the electrons recombine with the holes |
9 | 3307-3310 | Under the action of an electric field,
these holes move towards negative potential
giving the hole current, Ih The total current, I is
thus the sum of the electron current Ie and the
hole current Ih:
I = Ie + Ih
(14 2)
It may be noted that apart from the process of generation of conduction
electrons and holes, a simultaneous process of recombination occurs in
which the electrons recombine with the holes At equilibrium, the rate of
generation is equal to the rate of recombination of charge carriers |
9 | 3308-3311 | The total current, I is
thus the sum of the electron current Ie and the
hole current Ih:
I = Ie + Ih
(14 2)
It may be noted that apart from the process of generation of conduction
electrons and holes, a simultaneous process of recombination occurs in
which the electrons recombine with the holes At equilibrium, the rate of
generation is equal to the rate of recombination of charge carriers The
recombination occurs due to an electron colliding with a hole |
9 | 3309-3312 | 2)
It may be noted that apart from the process of generation of conduction
electrons and holes, a simultaneous process of recombination occurs in
which the electrons recombine with the holes At equilibrium, the rate of
generation is equal to the rate of recombination of charge carriers The
recombination occurs due to an electron colliding with a hole FIGURE 14 |
9 | 3310-3313 | At equilibrium, the rate of
generation is equal to the rate of recombination of charge carriers The
recombination occurs due to an electron colliding with a hole FIGURE 14 4 Schematic two-dimensional
representation of Si or Ge structure showing
covalent bonds at low temperature
(all bonds intact) |
9 | 3311-3314 | The
recombination occurs due to an electron colliding with a hole FIGURE 14 4 Schematic two-dimensional
representation of Si or Ge structure showing
covalent bonds at low temperature
(all bonds intact) +4 symbol
indicates inner cores of Si or Ge |
9 | 3312-3315 | FIGURE 14 4 Schematic two-dimensional
representation of Si or Ge structure showing
covalent bonds at low temperature
(all bonds intact) +4 symbol
indicates inner cores of Si or Ge FIGURE 14 |
9 | 3313-3316 | 4 Schematic two-dimensional
representation of Si or Ge structure showing
covalent bonds at low temperature
(all bonds intact) +4 symbol
indicates inner cores of Si or Ge FIGURE 14 5 (a) Schematic model of generation of hole at site 1 and conduction electron
due to thermal energy at moderate temperatures |
9 | 3314-3317 | +4 symbol
indicates inner cores of Si or Ge FIGURE 14 5 (a) Schematic model of generation of hole at site 1 and conduction electron
due to thermal energy at moderate temperatures (b) Simplified representation of
possible thermal motion of a hole |
9 | 3315-3318 | FIGURE 14 5 (a) Schematic model of generation of hole at site 1 and conduction electron
due to thermal energy at moderate temperatures (b) Simplified representation of
possible thermal motion of a hole The electron from the lower left hand covalent bond
(site 2) goes to the earlier hole site1, leaving a hole at its site indicating an
apparent movement of the hole from site 1 to site 2 |
9 | 3316-3319 | 5 (a) Schematic model of generation of hole at site 1 and conduction electron
due to thermal energy at moderate temperatures (b) Simplified representation of
possible thermal motion of a hole The electron from the lower left hand covalent bond
(site 2) goes to the earlier hole site1, leaving a hole at its site indicating an
apparent movement of the hole from site 1 to site 2 (a)
(b)
Rationalised 2023-24
329
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
EXAMPLE 14 |
9 | 3317-3320 | (b) Simplified representation of
possible thermal motion of a hole The electron from the lower left hand covalent bond
(site 2) goes to the earlier hole site1, leaving a hole at its site indicating an
apparent movement of the hole from site 1 to site 2 (a)
(b)
Rationalised 2023-24
329
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
EXAMPLE 14 1
An intrinsic semiconductor
will behave like an insulator at
T = 0 K as shown in Fig |
9 | 3318-3321 | The electron from the lower left hand covalent bond
(site 2) goes to the earlier hole site1, leaving a hole at its site indicating an
apparent movement of the hole from site 1 to site 2 (a)
(b)
Rationalised 2023-24
329
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
EXAMPLE 14 1
An intrinsic semiconductor
will behave like an insulator at
T = 0 K as shown in Fig 14 |
9 | 3319-3322 | (a)
(b)
Rationalised 2023-24
329
Semiconductor Electronics:
Materials, Devices and
Simple Circuits
EXAMPLE 14 1
An intrinsic semiconductor
will behave like an insulator at
T = 0 K as shown in Fig 14 6(a) |
9 | 3320-3323 | 1
An intrinsic semiconductor
will behave like an insulator at
T = 0 K as shown in Fig 14 6(a) It is the thermal energy at
higher temperatures (T > 0K),
which excites some electrons
from the valence band to the
conduction band |
9 | 3321-3324 | 14 6(a) It is the thermal energy at
higher temperatures (T > 0K),
which excites some electrons
from the valence band to the
conduction band These
thermally excited electrons at
T > 0 K, partially occupy the
conduction band |
9 | 3322-3325 | 6(a) It is the thermal energy at
higher temperatures (T > 0K),
which excites some electrons
from the valence band to the
conduction band These
thermally excited electrons at
T > 0 K, partially occupy the
conduction band Therefore,
the energy-band diagram of an
intrinsic semiconductor will be
as shown in Fig |
9 | 3323-3326 | It is the thermal energy at
higher temperatures (T > 0K),
which excites some electrons
from the valence band to the
conduction band These
thermally excited electrons at
T > 0 K, partially occupy the
conduction band Therefore,
the energy-band diagram of an
intrinsic semiconductor will be
as shown in Fig 14 |
9 | 3324-3327 | These
thermally excited electrons at
T > 0 K, partially occupy the
conduction band Therefore,
the energy-band diagram of an
intrinsic semiconductor will be
as shown in Fig 14 6(b) |
9 | 3325-3328 | Therefore,
the energy-band diagram of an
intrinsic semiconductor will be
as shown in Fig 14 6(b) Here,
some electrons are shown in
the conduction band |
9 | 3326-3329 | 14 6(b) Here,
some electrons are shown in
the conduction band These
have come from the valence
band leaving equal number of
holes there |
9 | 3327-3330 | 6(b) Here,
some electrons are shown in
the conduction band These
have come from the valence
band leaving equal number of
holes there Example 14 |
9 | 3328-3331 | Here,
some electrons are shown in
the conduction band These
have come from the valence
band leaving equal number of
holes there Example 14 1 C, Si and Ge have same lattice structure |
9 | 3329-3332 | These
have come from the valence
band leaving equal number of
holes there Example 14 1 C, Si and Ge have same lattice structure Why is C
insulator while Si and Ge intrinsic semiconductors |
9 | 3330-3333 | Example 14 1 C, Si and Ge have same lattice structure Why is C
insulator while Si and Ge intrinsic semiconductors Solution The 4 bonding electrons of C, Si or Ge lie, respectively, in
the second, third and fourth orbit |
9 | 3331-3334 | 1 C, Si and Ge have same lattice structure Why is C
insulator while Si and Ge intrinsic semiconductors Solution The 4 bonding electrons of C, Si or Ge lie, respectively, in
the second, third and fourth orbit Hence, energy required to take
out an electron from these atoms (i |
9 | 3332-3335 | Why is C
insulator while Si and Ge intrinsic semiconductors Solution The 4 bonding electrons of C, Si or Ge lie, respectively, in
the second, third and fourth orbit Hence, energy required to take
out an electron from these atoms (i e |
9 | 3333-3336 | Solution The 4 bonding electrons of C, Si or Ge lie, respectively, in
the second, third and fourth orbit Hence, energy required to take
out an electron from these atoms (i e , ionisation energy Eg) will be
least for Ge, followed by Si and highest for C |
9 | 3334-3337 | Hence, energy required to take
out an electron from these atoms (i e , ionisation energy Eg) will be
least for Ge, followed by Si and highest for C Hence, number of free
electrons for conduction in Ge and Si are significant but negligibly
small for C |
9 | 3335-3338 | e , ionisation energy Eg) will be
least for Ge, followed by Si and highest for C Hence, number of free
electrons for conduction in Ge and Si are significant but negligibly
small for C 14 |
9 | 3336-3339 | , ionisation energy Eg) will be
least for Ge, followed by Si and highest for C Hence, number of free
electrons for conduction in Ge and Si are significant but negligibly
small for C 14 4 EXTRINSIC SEMICONDUCTOR
The conductivity of an intrinsic semiconductor depends on its
temperature, but at room temperature its conductivity is very low |
9 | 3337-3340 | Hence, number of free
electrons for conduction in Ge and Si are significant but negligibly
small for C 14 4 EXTRINSIC SEMICONDUCTOR
The conductivity of an intrinsic semiconductor depends on its
temperature, but at room temperature its conductivity is very low As
such, no important electronic devices can be developed using these
semiconductors |
9 | 3338-3341 | 14 4 EXTRINSIC SEMICONDUCTOR
The conductivity of an intrinsic semiconductor depends on its
temperature, but at room temperature its conductivity is very low As
such, no important electronic devices can be developed using these
semiconductors Hence there is a necessity of improving their
conductivity |
Subsets and Splits