The first high-brightness blue LED was demonstrated by Shuji Nakamura of Nichia Corporation in 1994 and was based on InGaN. In parallel, Isamu Akasaki and Hiroshi Amano in Nagoya were working on developing the important GaN nucleation on sapphire substrates and the demonstration of p-type doping of GaN. Nakamura, Akasaki and Amano were awarded the 2014 Nobel prize in physics for their work. In 1995, Alberto Barbieri at the Cardiff University Laboratory (GB) investigated the efficiency and reliability of high-brightness LEDs and demonstrated a "transparent contact" LED using indium tin oxide (ITO) on (AlGaInP/GaAs).