Title of Invention: Cantilever set for atomic force microscopes, substrate surface inspection apparatus including the same, method of analyzing surface of semiconductor substrate by using the same, and method of forming micropattern by using the same Abstract: A method of forming a micropattern, a substrate surface inspection apparatus, a cantilever set for an atomic force microscope, and a method of analyzing a surface of a semiconductor substrate, and a probe tip the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM). Detailed Description: Part general_description_paragraphs: Part CROSS-REFERENCE TO RELATED APPLICATION: Korean Patent Application No. 10-2016-0009481, filed on Jan. 26, 2016, in the Korean Intellectual Property Office, and entitled: “Cantilever Set for Atomic Force Microscopes, Substrate Surface Inspection Apparatus Including the Same, Method of Analyzing Surface of Semiconductor Substrate by Using the Same, and Method of Forming Micropattern by Using the Same,” is incorporated by reference herein in its entirety. Part BACKGROUND: 1. Field Embodiments relate to a cantilever set for atomic force microscopes, a substrate surface inspection apparatus including the same, a method of analyzing a surface of a semiconductor substrate by using the same, and a method of forming a micropattern by using the same. 2. Description of the Related Art As a degree of integration of semiconductor devices increases, an area occupied by each unit cell in a plan view may decrease. In response to such a reduction in the area of the unit cell, a design rule of a smaller nano-scale critical dimension (CD) ranging from several nanometers to several tens of nanometers may be applied. Part SUMMARY: The embodiments may be realized by providing a method of forming a micropattern, the method including forming pinning patterns on a semiconductor substrate; forming a neutral pattern layer in spaces between the pinning patterns; and inspecting a surface of a guide layer that includes the pinning patterns and the neutral pattern layer by using an atomic force microscope (AFM). The embodiments may be realized by providing a substrate surface inspection apparatus including a supporter capable of accommodating a substrate; a measurement unit having a cantilever and a probe tip, the probe tip being at an end of the cantilever and being capable of contacting the substrate; a driving unit capable of changing relative positions of the substrate and the probe tip; a light source unit capable of irradiating light onto the cantilever; a sensor capable of obtaining information of a surface of the substrate from light reflected by the cantilever; and a determination unit determining whether the surface of the substrate is normal from the information of the surface of the substrate sensed by sensor, wherein the probe tip includes a probe tip base having a surface modified with a polymer. The embodiments may be realized by providing a cantilever set for an atomic force microscope (AFM), the cantilever set including a supporting frame; a cantilever fixed to the supporting frame; and a probe tip provided to an end of the cantilever, wherein the probe tip has a probe tip base with a surface that is at least partially modified with a polymer. The embodiments may be realized by providing a method of analyzing a surface of a semiconductor substrate, the method including providing a semiconductor substrate having pinning patterns and a neutral pattern layer on the semiconductor substrate; scanning the pinning patterns or the neutral pattern layer by using a probe tip, the probe tip having a probe tip base with a surface modified with a polymer; and measuring a work of adhesion between the probe tip and the scanned pinning patterns or the scanned neutral pattern layer. The embodiments may be realized by providing a probe tip for an atomic force microscope (AFM), the probe tip including a probe tip base; and a polymer on at least a part of a surface of the probe tip base. Part DETAILED DESCRIPTION: FIG. 1 illustrates a conceptual diagram of a substrate surface inspection apparatus 100 according to an embodiment. FIG. 2 illustrates a partially enlarged view of a region II of FIG. 1. The substrate surface inspection apparatus 100 may partially employ the principle of an atomic force microscope. Referring to FIGS. 1 and 2, a supporter 103 capable of supporting a semiconductor substrate W may be provided. The supporter 103 may fix the semiconductor substrate W thereto, and may change a position of the semiconductor substrate W by moving in an X, Y, or Z direction, as needed. In addition, the supporter 103 may be rotatable with respect to at least one of the X, Y, and Z axes, as needed. The supporter 103 may be rotatable with respect to at least one of the X, Y, and Z axes, whereby a severely uneven surface of the semiconductor substrate W may be 3-dimensionally and more precisely inspected. A measurement unit 110 may be provided above the supporter 103, the measurement unit 110 may include: a cantilever 112 capable of scanning the semiconductor substrate W; and a probe tip provided to an end of the cantilever 112. The probe tip may be formed at the end of the cantilever 112, or may be fixed to the end of the cantilever 112. The probe tip may include a probe tip base 114 with a surface modified with a polymer. This will be described in detail below with reference to FIGS. 4 to 8B. The probe tip may cause an attractive force and/or a repulsive force with respect to a surface of the semiconductor substrate W to be inspected, whereby the cantilever 112 may be reversibly deformed or moved. For example, the attractive force may be caused by a van der Waals force between the probe tip and the surface of the semiconductor substrate W. In an implementation, the attractive force may act between the probe tip and the surface of the semiconductor substrate W by an adhesion force therebetween, and the probe tip and the surface of the semiconductor substrate W may be isolated from each other by a pull-off force or greater. If the attractive force and the repulsive force between the probe tip and the surface of the semiconductor substrate W are removed, the cantilever 112 may be restored to an initial shape thereof. The other end of the cantilever 112 may be coupled to an actuator 116. The actuator 116 may cause a vibration of the cantilever 112. The actuator 116 may be a piezoelectric actuator or a thermal actuator. The piezoelectric actuator may be an actuator including a piezoelectric material in which an actuating displacement varies when a voltage is applied to the piezoelectric material. The thermal actuator may be an actuator including a bimetal structure in which an actuating displacement varies due to a bimetal effect when a voltage or a temperature change is applied to materials having different coefficients of thermal expansion. Although the embodiment in which the end of the cantilever 112 is coupled to the actuator 116 is shown in FIGS. 1 and 2, the supporter 103 may have such a function of the actuator. In addition, although the embodiment in which one cantilever 112 and one probe tip are provided is shown in FIGS. 1 and 2, two or more cantilevers 112 and two or more probe tips may be provided. A light source unit 120 may irradiate light onto a reflector 115 at an end of the cantilever 112. The light may be, e.g., laser light. For example, the light may be light of a neodymium-doped yttrium aluminum garnet (Nd:YAG) laser or light of a Ti:sapphire laser. The light irradiated onto the reflector 115 may be reflected by the reflector 115 and received by a sensor 130. The cantilever 112 including the reflector 115 may be deformed by or moved in response to a shape of a surface that is subjected to scanning, and the reflected light may amplify or shift in response to the deformation of the cantilever 112. The sensor 130 may be, e.g., a photodiode (PD). Information of the surface of the semiconductor substrate W sensed by the sensor 130 may be collected and analyzed by a determination unit 160. This will be described below in more detail. In an implementation, the supporter 103 may be arranged on a coarse stage 101. In an implementation, the measurement unit 110 may be supported by a supporting frame 140. The supporting frame 140 and the coarse stage 101 may be connected to a driving unit 150. The driving unit 150 may be configured to control relative positions of the supporting frame 140 and the coarse stage 101. Although the coarse stage 101 is shown as being moved in the embodiment of FIG. 1, the supporting frame 140 may be moved while the coarse stage 101 is fixed, or both of the coarse stage 101 and the supporting frame 140 may be moved. FIGS. 3A to 3D illustrate perspective views showing main portions of examples of probe tips 114a, 114b, 114c, and 114d and the cantilever 112, according to embodiments. The perspective views of the probe tips 114a, 114b, 114c, and 114d and the cantilever 112, which are shown in FIGS. 3A to 3D, are based on the situation in which the cantilever 112 and the probe tip are placed upside down. FIG. 3A shows a probe tip 114a having a general pyramid shape. Although easily manufactured, the probe tip 114a may provide a low resolution when a high aspect ratio surface is scanned by the probe tip 114a. FIG. 3B shows a probe tip 114b having a shape of a super tip in which a sharp end portion is added to a top end of a pyramid shape. FIG. 3C shows a probe tip 114c having a shape of an ultralever which has a thorn shape having a concave side cross-section. FIG. 3D shows a probe tip 114d having an end that is sharpened by a focused ion beam (FIB). Although the probe tips 114b, 114c, and 114d respectively shown in FIGS. 3B to 3D may result in a high resolution, the fabrication thereof may be difficult, and the probe tips 114b, 114c, and 114d may be damaged. Although the probe tip 114a shown in FIG. 3A will be described hereinafter, it will be understood by those of ordinary skill in the art that the same principle may also be applied to the probe tips 114b, 114c, and 114d of FIGS. 3B to 3D. FIG. 4 illustrates a conceptual diagram showing the end of the cantilever 112 and a surface of the probe tip, according to an embodiment. Referring to FIG. 4, a surface of the probe tip base 114 may be modified with a polymer layer 210. The polymer layer 210 may at least partially cover the surface of the probe tip base 114. In an implementation, the polymer layer 210 may cover the entire surface of the probe tip base 114. The polymer layer 210 may include, e.g., polystyrene (PS), polymethylmethacrylate (PMMA), poly(ethylene oxide) (PEO), polydimethylsiloxane (PDMS), poly(4-vinylpyridine) (P4VP), poly(2-vinylpyridine) (P2VP), poly(lactic acid) (PLA), polyisoprene (PI), or copolymers thereof. In an implementation, the polymer layer 210 may be variously configured depending upon materials used for the preparation thereof, formation methods thereof, and the like. FIGS. 5 to 8B illustrate conceptual side cross-sectional views showing configurations of the surface of the probe tip depending upon fabrication methods. Referring to FIG. 5, a simply coated polymer layer 211 may be provided to the surface of the probe tip base 114. Here, the polymer layer 211 and the probe tip base 114 may be bonded to each other by a physical bond and/or a chemical bond, e.g., by a van der Walls force. When the polymer layer 211 is formed by a method such as dip coating or the like, the polymer layer 211 and the probe tip base 114 may be bonded to each other by adhesion, which is a kind of physical bond. In the embodiment shown in FIG. 5, a covalent bond between the polymer layer 211 and the probe tip base 114 may not be present. In an implementation, the polymer layer 211 may have a thickness of about 10 nm to about 1,000 nm. In an implementation, the polymer layer 211 may be formed by a method such as dip coating, spray coating, or the like. For this purpose, a polymer solution, in which a polymer (or polymers) constituting the polymer layer 211 is dissolved in a solvent, may be provided. The solvent for the preparation of the polymer solution may be, e.g., benzene, toluene, xylene, propylene glycol monomethyl ester acetate (PGMEA), propylene glycol monomethyl ester (PGME), ethyl-3-ethoxy propionate (EEP), ethyl lactate (EL), methyl 2-hydroxybutyrate (HBM), gamma-butyrolactone (GBL), or the like. Hereinafter, embodiments will be described with reference to the drawings, with an emphasis on configurations of the polymer layer 211 depending upon formation methods thereof. Referring to FIG. 6A, the surface of the probe tip base 114 may be modified with a polymer moiety which is bonded to the surface of the probe tip base 114 by a covalent bond. The polymer moiety may be bonded to a certain area of the probe tip 114, and the polymer moiety may form a polymer layer 212. To form the polymer layer 212, the probe tip base 114 may be treated in an atmosphere activated by ultraviolet light and ozone. The probe tip base 114 may include various materials, e.g., a silicon (Si)-based material such as Si, SiO2, or Si3N4. In this case, by an ultraviolet/ozone (UVO) treatment, the probe tip base 114 may be terminated by a hydroxyl group (—OH) simultaneously with removal of impurities of the surface of the probe tip base 114. The hydroxyl group may be bonded to a silicon atom, which is a main material of the probe tip base 114. In an implementation, a carboxyl group (—COOH), an amine group (—NH2), a sulfhydryl or thiol group (—SH), an epoxy group, or the like may be used instead of the hydroxyl group. A polymer material for forming the polymer layer 212 may be a polymer material having a functional group capable of chemically reacting with the hydroxyl, carboxyl, amine, sulfhydryl, or epoxy group at an end of the polymer material, e.g., a polymer material having a hydroxyl group (—OH), an amine group, or a carboxyl group (—COOH) as a functional group at an end of the polymer material. In an implementation, the polymer material may include polystyrene, PMMA, PEO, PLA, polyisoprene, or copolymers thereof such as PS-r-PMMA. The functional group capable of chemically reacting with the hydroxyl group may react with the hydroxyl group on the surface of the probe tip base 114 and thus may remain as an ether group, an ester group, an amine group, or the like. In addition, the polymer material may be bonded to the surface of the probe tip base 114 and thus may form the polymer layer 212. FIG. 6B illustrates a conceptual diagram showing the polymer layer 212 formed on the surface of the probe tip base 114 in such a manner. FIG. 6C illustrates a conceptual diagram showing the polymer layer 212 according to another embodiment. In the polymer layer 212 of FIG. 6C, a polymer moiety may be bonded to the surface of the probe tip base 114 via an intervening linker. The linker may be a polymer having a hydroxyl, carboxyl, amine, sulfhydryl, epoxy group, or the like at an end of the polymer, e.g., polyethylene glycol (PEG), polypropylene glycol (PPG), polycaprolactone, polylactic acid, or the like. These polymers may have a degree of polymerization of about 100 to about 10,000. A polymer for forming the polymer moiety may have a functional group capable of reacting with and being bonded to the hydroxyl, carboxyl, amine, sulfhydryl group, or the like, which is provided to the end of the linker. For example, the polymer for forming the polymer moiety may have a hydroxyl group or a carboxyl group. As such, when the polymer moiety in the polymer layer 212 is bonded to the surface of the probe tip base 114 via the intervening linker, mobility allowing the polymer moiety to be movable may be imparted to the polymer moiety. Thus, the polymer moiety may more freely interact with the surface of the substrate, and a loss of the polymer moiety due to contact may be reduced. FIG. 7A illustrates a conceptual diagram showing the probe tip according to another embodiment. FIG. 7B illustrates a conceptual diagram specifically showing a situation in which a polymer moiety is bonded to the surface of the probe tip base 114. Referring to FIGS. 7A and 7B, a polymer layer 213 may be provided onto the surface of the probe tip base 114, the polymer layer 213 being formed by bonding the polymer moiety to the surface of the probe tip base 114. In an implementation, the polymer moiety of the same kind may be bonded to the surface of the probe tip base 114. In an implementation, the polymer moiety may be a block copolymer of a first polymer moiety 213a and a second polymer moiety 213b. For example, the polymer moiety may be prepared by anionic polymerization, whereby the length of each of the first polymer moiety 213a and the second polymer moiety 213b may be substantially constant. For example, the first polymer moieties 213a (of the polymer moieties formed on the entire surface of the probe tip base 114) may have substantially constant lengths. In addition, the second polymer moieties 213b (of the polymer moieties formed on the entire surface of the probe tip base 114) may have substantially constant lengths. The lengths of the first and second polymer moieties 213a and 213b may be precisely controlled, e.g., by anionic polymerization. In an implementation, one of the first polymer moiety 213a and the second polymer moiety 213b may be hydrophilic, and the other one may be hydrophobic. The first polymer moiety 213a and the second polymer moiety 213b may have different properties, and if the second polymer moiety 213b is selectively removed, the surface of the substrate having various properties may be inspected by using various means. In an implementation, the first polymer moiety 213a and the second polymer moiety 213b may be selectively decomposed by an alcohol solvent. The first polymer moiety 213a may be a polymer moiety having a polystyrene repeating unit, and the second polymer moiety 213b may be a polymer moiety having a repeating unit of PMMA. In this case, when the second polymer moiety 213b is subjected to deep ultraviolet (DUV) irradiation, the first polymer moiety 213a may be selectively dissolved by an alcohol solvent, e.g., isopropyl alcohol. In an implementation, the first polymer moiety 213a and the second polymer moiety 213b may be selectively dissolved by acetic acid. In an implementation, materials of the first polymer moiety 213a and the second polymer moiety 213b may be selected such that the first polymer moiety 213a and the second polymer moiety 213b have an etch selectivity upon etching by oxygen. For example, the materials of the first polymer moiety 213a and the second polymer moiety 213b may be selected such that the first polymer moiety 213a and the second polymer moiety 213b have an etch selectivity upon dry etching using oxygen plasma. The first polymer moiety 213a may be a polymer moiety having a polystyrene repeating unit, and the second polymer moiety 213b may be a polymer moiety having a repeating unit of PMMA. In this case, the second polymer moiety 213b may be selectively decomposed by oxygen as compared with the first polymer moiety 213a. In this case, the first polymer moiety 213a having the polystyrene repeating unit may have an oxidized surface-functional group. When the first polymer moiety 213a needs to be used while the second polymer moiety 213b is used for inspecting the surface of the semiconductor substrate, the second polymer moiety 213b may be removed by DUV irradiation and by etching using an alcohol solvent or an acid (wet etching) or using oxygen (dry etching) even without separately replacing the probe tip, whereby the probe tip having the first polymer moiety 213a on the surface of the probe tip base 114 may be easily obtained. As described above, the first polymer moiety 213a and the second polymer moiety 213b may have different properties, the second polymer moiety 213b bonded to an end of the probe tip base 114 may be used for a surface for which use of the second polymer moiety 213b is more suitable, and the first polymer moiety 213a remaining after removal of the second polymer moiety 213b may be used for inspecting a surface for which use of the first polymer moiety 213a is more suitable. Although the block copolymer is shown as being a di-block copolymer having two blocks, block copolymers having two or more blocks, e.g., tri-block copolymers or tetra-block copolymers, may also be used, as desired. In an implementation, star-shaped block copolymers may also be used. FIG. 8A illustrates a conceptual diagram showing the probe tip according to a further embodiment. FIG. 8B illustrates a conceptual diagram for explaining a method of activating a homopolymer having specific properties by dipping the probe tip into a specific solvent, as desired. Referring to FIGS. 8A and 8B, a polymer layer 214 may be provided onto the surface of the probe tip base 114, the polymer layer 214 being formed by bonding each of two homopolymers to the surface of the probe tip base 114 by a covalent bond. The two homopolymers may be polymers having different properties. The two homopolymers may be randomly distributed on the surface of the probe tip base 114. In an implementation, a first homopolymer, which is one of the two homopolymers, may be hydrophilic, and a second homopolymer, which is the other one, may be hydrophobic. For example, the first homopolymer may be PMMA, PEO, PLA, polyisoprene, or the like. For example, the second homopolymer may be polystyrene. When both of the two homopolymers are bonded to the surface of the probe tip base 114, it may be difficult to precisely inspect the surface of the substrate in the case that both of the two homopolymers are activated. Therefore, only a desired one of the two homopolymers may be activated, as desired. For example, only a desired one of the two homopolymers may be activated at one time. For this purpose, a solvent having miscibility with one or each of the two homopolymers may be used. For example, as shown in FIG. 8B, if the polymer layer 214 is dipped into a first solvent having strong miscibility with the first homopolymer, the first homopolymer may be activated and swollen, and the second homopolymer (having low affinity with the first solvent) may be entangled on and remain close to the surface of the probe tip base 114. Here, if removal of the first solvent and drying are performed, the second homopolymer may be directly located on or close to the surface of the probe tip base 114, and the first homopolymer (outside the second homopolymer) may be exposed. As a result, the first homopolymer may be formed or be present at the outermost side of the polymer layer 214, and this configuration may be used when the surface of the substrate is inspected by using the probe tip modified with the first homopolymer. On the other hand, when the second homopolymer needs to be formed or present at the outermost side of the polymer layer 214, a second solvent having strong miscibility with the second homopolymer may be used. If the polymer layer 214 is dipped into the second solvent, the second homopolymer may be activated and swollen, and the first homopolymer (having low affinity with the second solvent) may be entangled on and remain close to the surface of the probe tip base 114. Here, if removal of the second solvent and drying are performed, the first homopolymer may be directly located on or close to the surface of the probe tip base 114, and the second homopolymer outside the first homopolymer may be exposed. As a result, the second homopolymer may be formed at the outermost side of the polymer layer 214, and this configuration may be used when the surface of the substrate is inspected by using the probe tip modified with the second homopolymer. In an implementation, the first solvent may include, e.g., water, methanol, ethanol, isopropyl alcohol, acetone, ammonia, acetic acid, dimethyl sulfoxide (DMSO), acetonitrile, tetrahydrofuran (THF), 1,4-dioxane, dimethylformamide (DMF), formic acid, or the like. In an implementation, the second solvent may include, e.g., benzene, toluene, xylene, carbon tetrachloride, n-methyl pyrrolidone (NMP), cyclohexane, chloroform, dimethyl carbonate, methyl ethyl ketone (MEK), diethyl ether, ethyl acetate, or the like. An atomic force microscope shown in FIGS. 1 and 2 may include the probe tip having the surface that is modified as described with reference to FIGS. 5 to 8B. In an implementation, the atomic force microscope may be used as an apparatus for inspecting or analyzing the surface of the semiconductor substrate W, and a method of inspecting the surface of the semiconductor substrate by using the atomic force microscope will be described hereinafter. FIG. 9 illustrates a flowchart of a method of inspecting a surface of a semiconductor substrate according to a process order of the method. FIG. 10 illustrates a side cross-sectional view for conceptually explaining the method of inspecting the surface of the semiconductor substrate. Referring to FIGS. 9 and 10, a substrate 302 may be provided, the substrate 302 including a surface to be inspected, e.g., pinning patterns 306P and a neutral pattern layer 314 (S1). These will be described below with reference to FIGS. 11A to 13B. Next, to inspect surfaces of the pinning patterns 306P and/or the neutral pattern layer 314, the surfaces may be scanned by using the probe tip (S2). The probe tip may scan the surfaces of the pinning patterns 306P and/or the neutral pattern layer 314 in a contact manner, a non-contact manner, and/or a tapping manner. As will be described below in detail, the pinning patterns 306P and the neutral pattern layer 314 may include a polymer material, and a force, which acts between the probe tip and the pinning patterns 306P or between the probe tip and the neutral pattern layer 314, may be reasonably modeled by the Johnson-Kendall-Roberts (JKR) theory. According to the JKR theory, the force F acting between the probe tip and the surfaces to be inspected may be modeled by Equation 1. F=(3/2)πRW [Equation 1] In Equation 1, R is a radius of curvature of the end of the probe tip, and W is a work of adhesion between the probe tip and the surfaces to be inspected, the work of adhesion representing energy per unit area. To determine whether the surfaces of the pinning patterns 306P and the neutral pattern layer 314 are normal by using a value of the work of adhesion W, which is calculated by using Equation 1, a reference value for comparison with the value may be secured or determined. To determine the reference value, a standard material substrate having a material on a surface thereof may be prepared, the material being the same as the pinning patterns 306P or the neutral pattern layer 314 (PS1). For example, the standard material substrate having a uniform single layer of the material on the standard material substrate may be separately fabricated, the material being the same as the pinning patterns 306P or the neutral pattern layer 314. Next, the surface of the standard material substrate may be scanned by using the probe tip, whereby a value of the force or a range of the value may be measured, the force acting between the probe tip and the material of the pinning patterns 306P or the neutral pattern layer 314. A range of the reference value may be obtained by performing the measurement of the value a plurality of times (PS2). For example, the reference value for the work of adhesion between a probe tip modified with PS and a surface of PS may range from about 58 mJ/m2 to about 68 mJ/m2. For example, the reference value for the work of adhesion between a probe tip modified with PMMA and a surface of PMMA may range from about 71 mJ/m2 to about 76 mJ/m2. For example, the reference value for the work of adhesion between a probe tip modified with PS-r-PMMA (PS:PMMA=7:3) and a surface of PS-r-PMMA (PS:PMMA=7:3) may range from about 60 mJ/m2 to about 67 mJ/m2. The reference value may not be measured every time the surface inspection is performed. However, the range of the reference value may be affected by the spring constant of a cantilever in use, the radius of curvature of the end of the probe tip, the temperature and humidity during the measurement, and the like, and if these parameters are changed, a different reference value may be derived. Therefore, if the conditions for the surface inspection are different from the conditions upon obtaining the reference value, a new reference value may be determined. The work of adhesion between the probe tip and the surfaces of the pinning patterns 306P and the neutral pattern layer 314 obtained by the scanning in operation S2 may be compared with the reference value obtained above, whereby whether the work of adhesion is normal is determined (S3). In an implementation, the determination may be performed as follows: if the value obtained by the scanning falls within the range of the reference value, the value is determined as being normal, and if the value obtained by the scanning is out of the range of the reference value, the value is determined as being abnormal. In an implementation, the determination may be performed as follows: the range of the reference value may be allowed to have a certain tolerance range, and if the value obtained by the scanning falls within the range of the reference value or the tolerance range, the value may be determined as being normal. Whether the surfaces are normal may be determined in various methods by taking into account measurement conditions. If the value obtained by the scanning is determined as being normal, while the result that the value is normal is output (S4a), another portion of the surfaces of the pinning patterns 306P or the neutral pattern layer 314 may be further inspected, or a subsequent process may be further performed. If the value obtained by the scanning is determined as being abnormal, while the result that the value is abnormal is output (S4b), the value may be stored in a storage device, or a subsequent action (e.g., disposal of the substrate) due to the occurrence of surface abnormality may be performed. Instead of directly inspecting a surface, on which a micropattern is formed, by using an atomic force microscope, a droplet of a liquid may be formed on the surface, and whether the surface is normal may be determined by using a contact angle between the droplet and the surface. For example, the following method has been used. After the pinning patterns 306P or the neutral pattern layer 314 is formed, a material substrate may be separately fabricated by the same method as a method of forming the pinning patterns 306P (or a method of forming the neutral pattern layer 314, when the neutral pattern layer 314 is intended to be inspected), and the contact angle of the droplet on the material substrate is measured. Next, if the measured contact angle of the droplet falls within a desired range, it is inferred that the pinning patterns 306P (or the neutral pattern layer 314, when the neutral pattern layer 314 is intended to be inspected) have been normally formed. The reason for doing so is that although the size of the droplet for measuring the contact angle may be at a level of several micrometers even though the droplet is formed as small as possible, the size of the pattern may be no more than several tens of nanometers. As a result, direct inspection of the pinning patterns 306P or the neutral pattern layer 314 may not be performed, the pinning patterns 306P or the neutral pattern layer 314 being actually obtained in a semiconductor fabrication process. In addition, with the trend of forming finer patterns, although heterogeneous components for finely adjusting properties of the pinning patterns 306P or the neutral pattern layer 314 may be added, there is a limit in that an extremely small change of the properties due to the addition of the heterogeneous components is not detected by the general method. For example, when PS is selected as the neutral pattern layer 314, hydroxyethyl methacrylate (HEMA), as a heterogeneous component for finely adjusting properties of PS, may be copolymerized with PS in a certain ratio. However, it may be difficult to find a difference depending upon an amount of HEMA by measuring the contact angle, as shown in Table 1. A significant difference was found depending upon the amount of HEMA when the work of adhesion was directly measured by using an atomic force microscope, and it was confirmed that the method of inspecting the surface of the substrate by using the atomic force microscope could allow the surface of the substrate to be more precisely inspected than the other method. TABLE 1 Contact angle of Amount of water droplet Work of HEMA in PS (degree) adhesion (mJ/m2) 2 mol % 86.54 83.12 1 mol % (425)743-0569 mol % 86.77 60.83 In addition, surface properties of a polymer layer on the surface of the substrate may be significantly changed as the polymer layer was subjected to a photolithography process. For example, the work of adhesion was measured in each of the case that a crosslinked PMMA layer was formed on the surface of the substrate (Example 1), the case that the PMMA layer of Example 1 was subjected to a photolithography process (Example 2), the case that a random copolymer of the same material as the neutral pattern layer 314 was coated onto the surface of the substrate and then subjected to a photolithography process (Example 3), and the case that the pinning patterns 306P (PMMA component) and the neutral pattern layer 314 (PS component) as shown in FIG. 10 were formed (Example 4). Here, a probe tip modified with PS or PMMA by using a PEG linker (silane-PEG-COOH) was used, the PEG linker including a PEG moiety having a degree of polymerization of about 5,000. As shown in Table 2, below, for comparison, when the works of adhesion were respectively measured on PMMA of the pinning pattern (Example 4) and on PMMA after the photolithography process (Example 2) by using the probe tip modified with PMMA, it may be seen that the works of adhesion respectively had values of 68.86 and 73.74, and that there was a significant difference therebetween. In addition, for comparison, when the works of adhesion were respectively measured on PS of the neutral pattern layer (Example 4) and on PS after the photolithography process (Example 3) by using the probe tip modified with PMMA, it may be seen that the works of adhesion respectively had values of 81.70 and 100.80, and that there was a significant difference therebetween. Therefore, to precisely analyze surface properties of the pinning patterns and the neutral pattern layer, it may be seen that performing surface analysis by using the atomic force microscope, as described herein, would be desirable. TABLE 2 Measurement of work Measurement of work of adhesion by using of adhesion by using Inspection probe tip modified probe tip modified target with PS (mJ/m2) with PMMA (mJ/m2) Example Croslinked — 85.14 1 PMMA Example PMMA after — 73.74 2 photoli- thography process Example PS after 63.45 100.80 3 photoli- thography process Example Pinning 62.60 68.86 4 pattern (PMMA) Neutral 62.71 81.70 pattern layer (PS) FIGS. 11A to 17B illustrate diagrams showing a method of forming a micropattern according to a process order, according to an embodiment. FIGS. 11A, 12A, . . . , and 17A illustrate plan views showing main portions for explaining the method of forming the micropattern. FIGS. 11B, 12B, . . . , and 17B Illustrate cross-sectional views taken along lines B-B′ of FIGS. 11A, 12A, . . . , and 17A, respectively. Referring to FIGS. 11A and 11B, an etching target layer 304 may be formed on a substrate 302, and a pinning material layer 306 may be formed on the etching target layer 304. The substrate 302 may include a semiconductor substrate. In an implementation, the substrate 302 may include a semiconductor such as Si or Ge. In an implementation, the substrate 302 may include a compound semiconductor such as SiGe, SiC, GaAs, InAs, or InP. In an implementation, the substrate 302 may have a silicon-on-insulator (SOI) structure. The substrate 302 may include a conductive region, e.g., an impurity-doped well, or an impurity-doped structure. In an implementation, the substrate 302 may have various device isolation structures such as a shallow trench isolation (STI) structure. The etching target layer 304 may be an insulating layer or a conductive layer. For example, the etching target layer 304 may include a metal, an alloy, a metal nitride, a metal oxynitride, a metal oxycarbide, a semiconductor, polysilicon, an oxide, a nitride, an oxynitride, a hydrocarbon compound, or combinations thereof. When a pattern intended to be finally formed is realized on the substrate 302, the etching target layer 304 may be omitted. In an implementation, the pinning material layer 306 may be a polymer material layer. For example, the pinning material layer 306 may be a crosslinkable and hydrophilic polymer material layer. In an implementation, the pinning material layer 306 may include crosslinked PMMA. A crosslinking agent may be used for the crosslinking of PMMA. The crosslinking agent which may be used for the crosslinking of PMMA may include a di-, tri-, tetra-, or more-functional ethylene unsaturated monomer. For example, the crosslinking agent may include trivinylbenzene, divinyltoluene, divinylpyridine, divinylnaphthalene, divinylxylene, ethyleneglylcol diacrylate, trimethylolpropane triacrylate (TMPTA), diethyleneglylcol divinyl ether, trivinylcyclohexane, allyl methacrylate (ALMA), ethyleneglylcol dimethacrylate (EGDMA), diethyleneglylcol dimethacrylate (DEGDMA), prophyleneglylcol dimethacrylate, prophyleneglylcol diacrylate, trimethylolpropane trimethacrylate (TMPTMA), divinylbenzene (DVB), glycidyl methacrylate, 2,2-dimethylpropane-1,3-diacrylate, 1,3-butylene glycol diacrylate, 1,3-butylene glycol dimethacrylate, 1,4-butandiol diacrylate, diethylene glycol diacrylate, diethylene glycol dimethacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol dimethacrylate, tripropylene glycol diacrylate, tripropylene glycol dimethacrylate, tetraethylene glycol diacrylate, tetraethylene glycol dimethacrylate, ethoxylated bisphenol A diacrylate, ethoxylated bisphenol A dimethacrylate, pentaerythritol triacrylate, trimethylolpropane triethoxy triacrylate, glyceryl propoxy triacrylate, pentaerythritol tetracrylate, pentaerythritol tetramethacrylate, dipentaerythritol monohydroxypentacrylate, ethoxylated diacrylate, ethoxylated triacrylate, ethoxylated TMPTA, ethoxylated TMPTMA, ethoxylated tetraacrylate, divinyl silane, tirvinyl silane, dimethyl divinyl silane, divinyl methyl silane, methyl trivinyl silane, diphenyl divinyl silane, divinyl phenyl silane, trivinyl phenyl silane, divinyl methyl phenyl silane, tetravinyl silane, dimethyl vinyl disiloxane, glycosyl urea including di-, tri- and tetra-glycosyl urea, epoxy, or mixtures thereof. An anti-reflective layer 310 may be formed on the pinning material layer 306, and a mask pattern 312 including a plurality of pillars 312P may be formed on the anti-reflective layer 310. The anti-reflective layer 310 may be any anti-reflective layer suitable for photolithography processes. In an implementation, the anti-reflective layer 310 may include a Si-containing material. In an implementation, the anti-reflective layer 310 may include a silicon oxynitride layer. In an implementation, the anti-reflective layer 310 may include an organic anti-reflective coating (ARC) material for KrF excimer lasers, ArF excimer lasers, ArF-immersion (ArF-i), or other suitable light sources. In an implementation, the anti-reflective layer 310 may have a thickness of about 20 nm to about 500 nm. The plurality of pillars 312P formed as the mask pattern 312 may be arranged in a regular shape. For example, the plurality of pillars 312P may be arranged in a hexagonal array or a matrix array. In an implementation, each of the plurality of pillars 312P may have a diameter that is 0.5 times to 1.5 times a bulk cycle L0 of a block copolymer layer 320 described with reference to FIGS. 14A and 14B. For this purpose, a width W1 of each of the plurality of pillars 312P formed as the mask pattern 312 described with reference to FIGS. 11A and 11B may be adjusted. Details of the bulk cycle L0 will be described below with reference to FIGS. 15A and 15B. The plurality of pillars 312P may have a first pitch P1, which is at least 1.5 times the bulk cycle L0 of the block copolymer layer 320 described with reference to FIGS. 14A and 14B. The plurality of pillars 312P may be arranged in a hexagonal array having the first pitch P1 that is at least 1.5 times the bulk cycle L0 of the block copolymer layer 320. In an implementation, the plurality of pillars 312P may be arranged in a hexagonal array having the first pitch P1 that is about 1.73 times the bulk cycle L0 of the block copolymer layer 320. In this case, as will be described with reference to FIGS. 15A and 15B, each of a plurality of first domains 320A may have a cylindrical shape and be self-aligned to be located in a central portion of three adjacent pillars 312P among the plurality of pillars 312P, the plurality of first domains 320A being formed by a phase separation process of the block copolymer layer 320. In an implementation, the plurality of pillars 312P may be arranged in a hexagonal array having the first pitch P1 that is N times (where N is an integer of 2 or more) the bulk cycle L0 of the block copolymer layer 320. For example, the first pitch P1 of the plurality of pillars 312P may be 2 times the bulk cycle L0 of the block copolymer layer 320. In this case, as shown in FIGS. 18A and 18B, each of a plurality of first domains 320A′ may have a cylindrical shape and be self-aligned to be located in a middle portion of two adjacent pillars 312P among the plurality of pillars 312P, the plurality of first domains 320A′ being formed by a phase separation process of the block copolymer layer 320. The mask pattern 312 may include a photoresist. In an implementation, the mask pattern 312 may include a photoresist for KrF excimer lasers (248 nm), a photoresist for ArF excimer lasers (193 nm), a photoresist for ArF-immersion, a photoresist for F2 excimer lasers (157 nm), or a photoresist for extreme ultraviolet (EUV) light (13.5 nm). Referring to FIGS. 12A and 12B, the anti-reflective layer 310 and the pinning material layer 306 may be etched by using the mask pattern 312 (see FIGS. 11A and 11B) as an etch mask, thereby forming pinning patterns 306P and an anti-reflective pattern. The pinning patterns 306P may be arranged in a regular shape. For example, the pinning patterns 306P may be arranged in a hexagonal array or a matrix array. After the pinning patterns 306P are formed, upper surfaces of the pinning patterns 306P may be exposed by removing unnecessary layers. Referring to FIGS. 13A and 13B, a neutral pattern layer 314 may be formed on an exposed surface of the etching target layer 304. The neutral pattern layer 314 may be formed by coating a polymer material layer for forming a neutral pattern onto the exposed surface of the etching target layer 304. In an implementation, the polymer material layer for forming the neutral pattern may be, e.g., a random copolymer including the first polymer moiety 213a and the second polymer moiety 213b in a constant ratio. The first polymer moiety 213a and the second polymer moiety 213b have been described with reference to FIGS. 7A and 7B. A molar ratio of the first polymer moiety 213a to the second polymer moiety 213b may be about 5:5 to about 3:7. In an implementation, the polymer material layer for forming the neutral pattern may be, e.g., a random copolymer in which a repeating unit of the first homopolymer and a repeating unit of the second homopolymer are copolymerized in a constant ratio, the first homopolymer and the second homopolymer having been described with reference to FIGS. 8A and 8B. A molar ratio of the repeating unit of the first homopolymer to the repeating unit of the second homopolymer may be about 5:5 to about 3:7. In an implementation, depending upon a shape of a pattern intended to be formed, the molar ratio of the repeating unit of the first homopolymer to the repeating unit of the second homopolymer may be about 6:4 to about 4:6. In an implementation, depending upon a shape of a pattern intended to be formed, the molar ratio of the repeating unit of the first homopolymer to the repeating unit of the second homopolymer may be about 4:6 to about 2:8. To form the neutral pattern layer 314, the random copolymer may be bonded to the surface of the etching target layer 304. To bond the random copolymer to the surface of the etching target layer 304, the surface of the etching target layer 304 may be terminated by a functional group, e.g., a carboxyl group (—COOH), an amine group (—NH2), a sulfhydryl group (—SH), an epoxy group, or the like, instead of a hydroxyl group. In an implementation, the random copolymer may be a polymer material having a functional group, e.g., a hydroxyl group (—OH), an amine group, or a carboxyl group (—COOH), the functional group being capable of chemically reacting with the terminated functional groups. In an implementation, the random copolymer may be a PS-r-PMMA copolymer having a hydroxyl group (—OH), an amine group, or a carboxyl group (—COOH). Here, a ratio of PMMA to PS may be about 5:5 to about 3:7. In an implementation, the neutral pattern layer 314 may be a polystyrene copolymer including about 96 mol % to about 99.5 mol % of a styrene repeating unit and about 0.05 mol % to about 4 mol % of a (meth)acrylate repeating unit. In an implementation, the (meth)acrylate may be HEMA. Whether the pinning patterns 306P and/or the neutral pattern layer 314 have been normally formed may be inspected. The inspection may be performed by the method described with reference to FIGS. 9 and 10. Referring to FIGS. 14A and 14B, a block copolymer layer 320 including a pure block copolymer may be formed above a guide pattern layer GP including the pinning patterns 306P, the pure block copolymer including a first polymer block and a second polymer block, the first polymer block and the second polymer block respectively having a first repeating unit and a second repeating unit. The block copolymer layer 320 may be formed above the guide pattern layer GP to a constant thickness. In an implementation, the pure block copolymer may include a linear or branched polymer having a molecular weight of about 3,000 g/mol to about 2,000,000 g/mol. In the pure block copolymer, the first polymer block may be PMMA, PEO, PLA, or PI. The second polymer block may be polystyrene (PS). In the block copolymer layer 320, the second polymer block may constitute a major block, and the first polymer block may constitute a minor block. In an implementation, a molar ratio of the first polymer block to the second polymer block in the pure block copolymer may be about 20:80 to about 40:60. In an implementation, the block copolymer layer 320 may be formed by a dip coating, solution casting, or spin coating process. Referring to FIGS. 15A and 15B, phase separation of the block copolymer layer 320 (see FIGS. 14A and 14B) may be performed, whereby a self-assembled layer 320S including a plurality of first domains 320A and a second domain 320B may be formed, the plurality of first domains 320A including the first polymer block, the second domain 320B including the second polymer block and surrounding the plurality of first domains 320A. The bulk cycle L0 determined in a bonding structure of the first polymer block and the second polymer block, that is, the bulk cycle L0 corresponding to an intrinsic pitch with regard to a repeating unit of a self-assembled structure may be about 40 nm to about 60 nm, the self-assembled structure being obtained as a result of self-assembly from the block copolymer layer 320. For the phase separation of the block copolymer layer 320, the block copolymer layer 320 may be annealed at a temperature that is higher than a glass transition temperature (Tg) of a block copolymer in the block copolymer layer 320. For example, to perform the phase separation of the block copolymer layer 320, the block copolymer layer 320 may be annealed at a temperature of about 130° C. to about 190° C. for about 1 hour to about 24 hours. The plurality of first domains 320A may be regularly arranged. For example, due to the plurality of first domains 320A, a sub-hexagonal array may be obtained, the sub-hexagonal array
{'bibliographic_information': "{'country': 'US', 'doc-number': '15415034', 'kind': 'B2', 'date': '20170125', 'extension': '53', 'invention_title': 'Cantilever set for atomic force microscopes, substrate surface inspection apparatus including the same, method of analyzing surface of semiconductor substrate by using the same, and method of forming micropattern by using the same'}", 'source_file': './grant/2019/ipg190716.xml', 'source_data': 'USPTO-Grant'}