Title of Invention: SEMICONDUCTOR LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE Abstract: A semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first side face intersects the first face. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately. The stacked body is aligned with the first substrate. The stacked body includes first and second semiconductor layers and a light emitting layer. The electrode is electrically connected to the first semiconductor layer. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face. Detailed Description: CROSS-REFERENCE TO RELATED APPLICATIONS This application is a division of and claims the benefit of priority under 35 U.S.C. §120 from U.S. Ser. No. 14/337,899 filed Jul. 22, 2014, and claims the benefit of priority under 35 U.S.C. §119 from Japanese Patent Application No. +1-206-908-8723 filed Jul. 30, 2013; the entire contents of each of which are incorporated herein by reference. FIELD Embodiments described herein relate generally to a semiconductor light emitting element and a light emitting device. BACKGROUND There are semiconductor light emitting elements such as light emitting diodes, laser diodes, and the like. There are light emitting devices using semiconductor light emitting elements. For both semiconductor light emitting elements and light emitting devices, it is desirable to increase the light extraction efficiency. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1A to 1C are schematic views illustrating a semiconductor light emitting element according to a first embodiment; FIG. 2 is a schematic cross-sectional view illustrating a light emitting device according to the first embodiment; FIGS. 3A to 3G are cross-sectional views schematically illustrating the process of manufacturing a support substrate according to the first embodiment; FIG. 4 is a schematic cross-sectional view illustrating another light emitting device according to the first embodiment; FIG. 5A and FIG. 5B are schematic cross-sectional views illustrating another semiconductor light emitting element according to the first embodiment; FIGS. 6A to 6C are schematic cross-sectional views illustrating another semiconductor light emitting element according to the first embodiment; FIGS. 7A to 7G are cross-sectional views schematically illustrating the process of manufacturing a different support substrate according to the first embodiment; FIGS. 8A to 8F are cross-sectional views schematically illustrating the process of manufacturing a different support substrate according to the first embodiment; FIG. 9 is a schematic cross-sectional view illustrating a semiconductor light emitting element according to a second embodiment; and FIG. 10 is a schematic cross-sectional view illustrating another semiconductor light emitting element according to the second embodiment. DETAILED DESCRIPTION According to one embodiment, a semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first face is parallel to a first direction and a second direction perpendicular to the first direction. The first side face intersects the first direction and extends in the second direction. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately in the first direction. Each of the conductive portions and each of the insulating portions extend in the second direction. The stacked body is aligned with the first substrate in a third direction intersecting with the first direction and the second direction. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The first semiconductor layer has a second side face intersecting the first direction. The first semiconductor layer is of a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the first face. The second semiconductor layer is of a second conductivity type. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The electrode is electrically connected to the first semiconductor layer. The electrode covers at least a portion of the second side face. The conductive layer is provided between the second semiconductor layer and the first substrate. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face. According to another embodiment, a semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first face is parallel to a first direction and a second direction perpendicular to the first direction. The first side face intersects the first direction and extends in the second direction. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately in the first direction. Each of the conductive portions and each of the insulating portions extend in the second direction. The stacked body is aligned with the first substrate in a third direction intersecting with the first direction and the second direction. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a first portion and a second portion aligned with the first portion in the first direction. The first semiconductor layer is of a first conductivity type. The second semiconductor layer is provided between the first portion and the first face. The second semiconductor layer is of a second conductivity type. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The electrode is provided between the second portion and the first substrate. The electrode is electrically connected to the first semiconductor layer. The conductive layer is provided between the second semiconductor layer and the first substrate. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face. According to another embodiment, a light emitting device includes a semiconductor light emitting element and a second substrate. The semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first face is parallel to a first direction and a second direction perpendicular to the first direction. The first side face intersects the first direction and extends in the second direction. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately in the first direction. Each of the conductive portions and each of the insulating portions extend in the second direction. The stacked body is aligned with the first substrate in a third direction intersecting with the first direction and the second direction. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The first semiconductor layer has a second side face intersecting the first direction. The first semiconductor layer is of a first conductivity type. The second semiconductor layer is provided between the first semiconductor layer and the first face. The second semiconductor layer is of a second conductivity type. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The electrode is electrically connected to the first semiconductor layer. The electrode covers at least a portion of the second side face. The conductive layer is provided between the second semiconductor layer and the first substrate. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face. The second substrate includes a first electrode pad and a second electrode pad. The first electrode pad is electrically connected to the electrode. The second electrode pad is electrically connected to the conductive layer. According to another embodiment, a light emitting device includes a semiconductor light emitting element and a second substrate. The semiconductor light emitting element includes a first substrate, a stacked body, an electrode, and a conductive layer. The first substrate has a first face and a first side face. The first face is parallel to a first direction and a second direction perpendicular to the first direction. The first side face intersects the first direction and extends in the second direction. The first substrate includes a plurality of conductive portions and a plurality of insulating portions arranged alternately in the first direction. Each of the conductive portions and each of the insulating portions extend in the second direction. The stacked body is aligned with the first substrate in a third direction intersecting with the first direction and the second direction. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a first portion and a second portion aligned with the first portion in the first direction. The first semiconductor layer is of a first conductivity type. The second semiconductor layer is provided between the first portion and the first face. The second semiconductor layer is of a second conductivity type. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The electrode is provided between the second portion and the first substrate. The electrode is electrically connected to the first semiconductor layer. The conductive layer is provided between the second semiconductor layer and the first substrate. The conductive layer is electrically connected to at least one of the conductive portions and the second semiconductor layer. At least one of the insulating portions is disposed between the first side face and a portion of the conductive layer nearest to the first side face. The second substrate includes a first electrode pad and a second electrode pad. The first electrode pad is electrically connected to the electrode. The second electrode pad is electrically connected to the conductive layer. Various Embodiments are described hereinafter while referring to the drawings. Note that the drawings are schematic or simplified illustrations and that relationships between thicknesses and widths of parts and proportions in size between parts may differ from actual parts. Also, even where identical parts are depicted, mutual dimensions and proportions may be illustrated differently depending on the drawing. Note that in the drawings and specification of this application, the same numerals are applied to elements that have already appeared in the drawings and been described, and repetitious detailed descriptions of such elements are omitted. FIRST EMBODIMENT FIGS. 1A to 1C are schematic views illustrating a semiconductor light emitting element according to a first embodiment. FIG. 1A is a schematic plan view. FIG. 1B is a schematic cross-sectional view taken across line A1-A2 of FIG. 1A. FIG. 1C is a partial cross-sectional view schematically illustrating the cross-section across line B1-B2 in FIG. 1B. FIG. 1B is illustrated enlarged compared with FIGS. 1A and 1C. As illustrated in FIGS. 1A to 1C, a semiconductor light emitting element 110 according to this embodiment includes a support substrate 80 (first substrate), a stacked body SB, a first electrode 11 (electrode), and a second electrode 12. The support substrate 80 includes a top face 80u (first face) and a side face 80sa (first side face). The side face 80sa intersects a first direction parallel to the top face 80u, and extends in a second direction perpendicular to the first direction and is parallel to the top face 80u. In this example, the support substrate 80 is rectangular. The side face 80sa is, for example, one of the four side faces of the rectangular support substrate 80. The shape of the support substrate 80 is not limited to a rectangle, but may be any shape. Here, one direction that is parallel to the top face 80u is the X-axis direction. The Y-axis direction is parallel to the top face 80u and perpendicular the X-axis direction. The Z-axis direction is perpendicular to the X-axis direction and the Y-axis direction. The Z-axis direction is, for example, the direction perpendicular to the top face 80u. In this example, the X-axis direction is the first direction, the Y-axis direction is the second direction, and the Z-axis direction is a third direction. In this example, the side face 80sa extends in the Y-axis direction and extends in the Z-axis direction. In other words, the side face 80sa extends in a direction substantially perpendicular to the top face 80u. In the Specification of this application, “extends in a direction” includes cases in which there is a portion that extends in that direction, as well as cases strictly extending in that direction. For example, the side face 80sa may include at least a portion extending in the Y-axis direction. The support substrate 80 further includes a side face 80sb. The side face 80sb is the side face on the side opposite to the side face 80sa. The side face 80sb is, for example, opposite the side face 80sa in the X-axis direction. The side face 80sb, for example, intersects the X-axis direction and extends in the Y-axis direction. The side face 80sb also extends in the Z-axis direction, for example. In this example, the side face 80sb is substantially parallel to the side face 80sa. The side face 80sb may also be not parallel to the side face 80sa. The support substrate 80 includes a plurality of conductive portions 81 and a plurality of insulating portions 82. The plurality of conductive portions 81 and the plurality of insulating portions 82 are disposed alternately in the X-axis direction. In this example, the plurality of conductive portions 81 and the plurality of insulating portions 82 are disposed alternately over the whole X-axis direction of the support substrate 80 (top face 80u). The width Wi in the X-axis direction of each of the insulating portions 82 is, for example, not less than 1 μm and not more than 10 μm. The spacing Pt of the plurality of insulating portions 82 is, for example, not less than 2 μm and not more than 30 μm. The spacing Pt is, for example, the distance between centers of each of the plurality of insulating portions 82 in the X-axis direction. More specifically, it is the distance in the X-axis direction between the center in the X-axis direction of one of a pair of adjacent insulating portion 82 and the center in the X-axis direction of the other insulating portion 82. The width Wi and the spacing Pt are, for example, substantially the same in each of the plurality of insulating portions 82. In other words, each of the plurality of insulating portions 82 is, for example, disposed as equal spacing in the X-axis direction. The width Wi and the spacing Pt may, for example, be different in each of the plurality of insulating portions 82. The plurality of conductive portions 81 and the plurality of insulating portions 82 extend in the Y-axis direction. In this example, the plurality of conductive portions 81 and the plurality of insulating portions 82 also extend in the Z-axis direction. In this example, each of the plurality of conductive portions 81 and the plurality of insulating portions 82 are substantially parallel to the side face 80sa. Each of the plurality of conductive portions 81 and the plurality of insulating portions 82 may be not be parallel to the side face 80sa. The electrical conductivity of the insulating portions 82 is lower than the electrical conductivity of the conductive portions 81. The insulating portions 82 are portions with lower electrical conductivity that the conductive portions 81 on the support substrate 80. Each of the plurality of insulating portions 82 electrically insulates the corresponding conductive portions 81 of the plurality of conductive portions 81. The insulating portions 82 are, for example, provided between two adjacent conductive portions 81, electrically insulating each of the two adjacent conductive portions 81. For example, silicon is used in the conductive portions 81. A metal material such as, for example, aluminum or copper or the like may be used in the conductive portions 81. For example, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film or the like can be used in the insulating portions 82. For example, a resin material or the like may be used in the insulating portions 82. One end in the Z-axis direction of each of the plurality of insulating portions 82 reaches the top face 80u. A portion of the top face 80u is formed by one end of each of the plurality of insulating portions 82. The other end in the Z-axis direction of each of the plurality of insulating portions 82 reaches a bottom face 80b of the support substrate 80. A portion of the bottom face 80b is formed by the other end of each of the plurality of insulating portions 82. The bottom face 80b is the face on the side opposite the top face 80u of the support substrate 80. The bottom face 80b is, for example, substantially parallel to the top face 80u. In this example, the support substrate 80 further includes a plurality of first metal portions 83 and a plurality of second metal portions 84. The plurality of first metal portions 83 and the plurality of second metal portions 84 are provided if necessary and can be omitted. Each of the plurality of first metal portions 83 is provided at one end in the Z-axis direction of one of the plurality of conductive portions 81. Each of the plurality of first metal portions 83 is provided at the end on the top face 80u side of one of the plurality of conductive portions 81. In other words, each of the plurality of first metal portions 83 is provided on one of the plurality of conductive portions 81. For example, the electrical conductivity of the first metal portions 83 is higher than the electrical conductivity of the conductive portions 81. For example, an AuSn alloy or an NiSn alloy may be used in the first metal portions 83. In this example, a portion of the top face 80u is formed by one end of each of the plurality of first metal portions 83. In this example, the top face 80u is formed by the plurality of insulating portions 82 and the plurality of first metal portions 83. For example, the top face 80u may be formed by the plurality of conductive portions 81 and the plurality of insulating portions 82. Each of the plurality of second metal portions 84 is provided at the other end in the Z-axis direction of one of the plurality of conductive portions 81. Each of the plurality of second metal portions 84 is provided at the end on the bottom face 80b side of one of the plurality of conductive portions 81. In other words, each of the plurality of second metal portions 84 is provided below one of the plurality of conductive portions 81. For example, the electrical conductivity of the second metal portions 84 is higher than the electrical conductivity of the conductive portions 81. For example, Al, Ag, their alloys, and the like can be used in the second metal portion 84. In this example, a portion of the bottom face 80b is formed by one end of each of the plurality of second metal portions 84. In this example, the bottom face 80b is formed by the plurality of insulating portions 82 and the plurality of second metal portions 84. For example, the bottom face 80b may be formed by the plurality of conductive portions 81 and the plurality of insulating portions 82. In this example, the side face 80sa and the side face 80sb are formed by a conductive portion 81, a first metal portion 83, and a second metal portion 84. The side face 80sa and the side face 80sb may be formed by, for example, an insulating portion 82. For example, if the conductive portions 81 and the insulating portions 82 are not parallel to the side face 80sa and the side face 80sb, the side face 80sa and the side face 80sb may be formed by both a conductive portion 81 and an insulating portion 82. The stacked body SB is aligned with the support substrate 80 in the Z-axis direction. The stacked body SB is provided on the top face 80u. The stacked body SB includes a first semiconductor layer 10, a second semiconductor layer 20, and a light emitting layer 30. The maximum length (width) in the X-axis direction of the stacked body SB is shorter than the maximum length in the X-axis direction of the top face 80u. In this example, the shape of the stacked body SB when projected onto the X-Y plane and the shape of the top face 80u (support substrate 80) when projected onto the X-Y plane are each rectangles. The width of the top face 80u in the X-axis direction is, for example, 500 μm (not less than 400 μm and not more than 600 μm). The width of the top face 80u in the Y-axis direction is, for example, 500 μm (not less than 400 μm and not more than 600 μm). The width of the stacked body SB in the X-axis direction is, for example, 400 μm (not less than 300 μm and not more than 500 μm). The width of the stacked body SB in the Y-axis direction is, for example, 400 μm (not less than 300 μm and not more than 500 μm). Also, the thickness of the support substrate 80 (thickness in the Z-axis direction) is, for example, 100 μm (not less than 50 μm and not more than 200 μm). The thickness of the stacked body SB is, for example, 2 μm (not less than 1 μm and not more than 10 μm). The first semiconductor layer 10 has a first conductivity type and includes nitride semiconductor. For example, the first conductivity type is n-type and the second conductivity type is p-type. The first conductivity type may be p-type and the second conductivity type may be n-type. Hereafter, a case in which the first conductivity type is n-type, and the second conductivity type is p-type will be described. A GaN layer doped with n-type impurities is used, for example, as the first semiconductor layer 10. Si is used, for example, as the n-type impurity. The first semiconductor layer 10 has a side face 10sa (second side face) that intersects with the X-axis direction. The side face 10sa extends, for example, in the Y-axis direction. The side face 10sa is, for example, one of the four side faces of the rectangular first semiconductor layer 10. The side face 10sa for example faces in the same direction as the side face 80sa of the support substrate 80. The first semiconductor layer 10 further includes a side face 10sb. The side face 10sb is the side face on the side opposite to the side face 10sa. The side face 10sb is, for example, opposite the side face 10sa in the X-axis direction. The side face 10sb, for example, intersects the X-axis direction and extends in the Y-axis direction. In this example, the side face 10sa and the side face 10sb are inclined with respect to the top face 80u (X-Y plane). The width in the X-axis direction of the first semiconductor layer 10 reduces from the support substrate 80 towards the stacked body SB. In other words, the width in the X-axis direction of the first semiconductor layer 10 reduces towards the upward direction. The side face 10sa and the side face 10sb are tapered faces. The angle formed between the side face 10sa and the top face 80u, and the angle formed between the side face 10sb and the top face 80u is, for example, 60° (not less than 40° and not more than 80°). The side face 10sa and the side face 10sb may be, for example, substantially perpendicular to the top face 80u. In this example, the side face 10sa is not parallel to the side face 10sb. The side face 10sb may be, for example, substantially parallel to the side face 10sa. The first semiconductor layer 10 further includes a top face 10u (second face). The top face 10u is, for example, a face on the side opposite to the light emitting layer 30 of the first semiconductor layer 10. The top face 10u is, for example, a face that faces in substantially the same direction as the top face 80u. Irregularities 10v are provided on the top face 10u. The top face 10u is, for example, a roughened surface. The second semiconductor layer 20 is provided between the first semiconductor layer 10 and the top face 80u. The second semiconductor layer 20 is a second conductivity type and includes nitride semiconductor. A GaN layer doped with p-type impurities is used, for example, as the second semiconductor layer 20. Mg is used, for example, as the p-type impurity. The thickness of the second semiconductor layer 20 is, for example, smaller than the thickness of the first semiconductor layer 10. The thickness of the second semiconductor layer 20 may be, for example, not less than the thickness of the first semiconductor layer 10. The light emitting layer 30 is provided between the first semiconductor layer 10 and the second semiconductor layer 20. The Z-axis direction corresponds, for example, to the stacking direction of the first semiconductor layer 10, the second semiconductor layer 20, and the light emitting layer 30. The light emitting layer 30 includes a nitride semiconductor, for example. The light emitting layer 30 includes, for example, a plurality of barrier layers, and well layers provided between each of the plurality of barrier layers. The barrier layers and the well layers are stacked along the Z-axis direction. The light emitting layer 30 uses, for example, a multi-quantum well (MQW) structure. The light emitting layer 30 may use, for example, a single-quantum well (SQW) structure. A GaN layer, for example, is used for the barrier layer. An InGaN layer may be used as the well layer, for example. When a voltage is applied between the first semiconductor layer 10 and the second semiconductor layer 20, a current flows through the light emitting layer 30. In this way light is emitted from the light emitting layer 30. In the semiconductor light emitting element 110, the top face 10u of the first semiconductor layer 10 becomes a light extraction face. As stated previously, irregularities 10v are provided on the top face 10u. In this way it is possible to reduce total reflection at the top face 10u of the light emitted from the light emitting layer 30 and improve the light extraction efficiency. The first electrode 11 covers at least a portion of the side face 10sa of the first semiconductor layer 10. The first electrode 11 may cover, for example, the whole side face 10sa. The first electrode 11 is electrically connected to the first semiconductor layer 10. The first electrode 11 is electrically connected to the first semiconductor layer 10 by, for example, contact with the side face 10sa. The first electrode 11 has reflectivity with respect to the light emitted from the light emitting layer 30. The reflectance of the first electrode 11 is, for example, higher than the reflectance of the first semiconductor layer 10. Al or an Al alloy or the like is used in the first electrode 11. The first electrode 11 includes, for example, a first side face portion 11a (first extending part), a second side face portion 11b, and a top face portion 11c (second extending part). The first side face portion 11a covers at least a portion of the side face 10sa of the first semiconductor layer 10. The second side face portion 11b covers at least a portion of the side face 10sb of the first semiconductor layer 10. The top face portion 11c covers at least a portion of the top face 10u of the first semiconductor layer 10. The first side face portion 11a may cover the whole side face 10sa. The second side face portion 11b may cover the whole side face 10sb. In this way, in this example, the first electrode 11 further covers at least a portion of the side face 10sb and a portion of the top face 10u. The first side face portion 11a, the second side face portion 11b, and the top face portion 11c are electrically connected to each other. The top face portion 11c contacts, for example, the first side face portion 11a and the second side face portion 11b. In this way, the first side face portion 11a, the second side face portion 11b, and the top face portion 11c are electrically connected to each other. For example, the first side face portion 11a, the second side face portion 11b, and the top face portion 11c are continuous with each other. For example, the first side face portion 11a, the second side face portion 11b, and the top face portion 11c are formed integrally. The top face portion 11c has a narrow linear shape extending in any direction parallel to the top face 10u (the X-Y plane). The width of the top face portion 11c in a direction perpendicular to the extension direction is, for example, not less than 1 μm and not more than 20 μm. The area of the top face portion 11c as a percentage of the area of the top face 10u is, for example, not less than 1% and not more than 30%. The top face portion 11c includes, for example, a casing part 11f along the outer edge of the top face 10u, and a partitioning part 11p that partitions the region on the inside of the casing part 11f. In this example, the shape of the casing part 11f when projected onto the X-Y plane is rectangular. The width W11f of the casing part 11f in a direction perpendicular to the extension direction is, for example, not less than 1 μm and not more than 20 μm. The partitioning part 11p is disposed, for example, near the center in the X-axis direction of the top face 10u. The partitioning part 11p extends, for example, in a linear manner in the Y-axis direction. The width W11p of the partitioning part 11p in a direction perpendicular to the extension direction is, for example, not less than 1 μm and not more than 20 μm. The position and the shape of the partitioning part 11p may be selected as desired. The partitioning part 11p may, for example, partition the region inside the casing part 11f into a lattice form. In other words, the partitioning part 11p may partition the region inside the casing part 11f into not fewer than two regions. A plurality of partitioning parts 11p, for example, may be provided. The second electrode 12 is provided between the second semiconductor layer 20 and the top face 80u. In this example, two second electrodes 12 are arranged in the X-axis direction. The number of second electrodes 12 is not limited to two, it may be one or it may be three or more. Each of the two second electrodes 12 is electrically connected to at least one of the plurality of conductive portions 81 and the second semiconductor layer 20. Each of the two second electrodes 12 is, for example, in contact with the second semiconductor layer 20. In this way, each of the two second electrodes 12 is electrically connected to the second semiconductor layer 20. Each of the two second electrodes 12 is electrically insulated from the side face 80sa by at least one insulating portion 82 disposed between at least one conductive portion 81 that is electrically connected to a second electrode 12 and the side face 80sa of the support substrate 80. Also, in this example, each of the two second electrodes 12 is electrically insulated from the side face 80sb by at least one insulating portion 82 disposed between at least one conductive portion 81 that is electrically connected to a second electrode 12 and the side face 80sb of the support substrate 80. In this way, at least one of the plurality of conductive portions 81 is electrically connected to a second electrode 12. In other words, at least one of the plurality of conductive portions 81 is electrically connected to the second semiconductor layer 20 via the second electrode 12. The second electrode 12 has, for example, reflectivity with respect to the light emitted from the light emitting layer 30. The reflectance of the second electrode 12 is, for example, higher than the reflectance of the second semiconductor layer 20. An Ag or Ag alloy or the like is used in the second electrode 12, for example. In this way, for example, it is possible to obtain high reflectivity in the second electrode 12. Also, in this example, at least one of the plurality of conductive portions 81 that is not electrically connected to the second electrode 12 is electrically connected to the first electrode 11. In other words, at least another one of the plurality of conductive portions 81 is electrically connected to the first semiconductor layer 10 via the first electrode 11. For example, at least one of the plurality of conductive portions 81 is electrically connected to the first side face portion 11a, and at least one of the plurality of conductive portions 81 is electrically connected to the second side face portion 11b. In this example, the width in the X-axis direction of the support substrate 80 (top face 80u) is greater than the width in the X-axis direction of the stacked body SB, and the first electrode 11 extends on the top face 80u. For example, the first side face portion 11a and the second side face portion 11b contact the top face 80u. For example, the first side face portion 11a contacts a first metal portion 83, and the second side face portion 11b contacts a different first metal portion 83. In this way, the first side face portion 11a is electrically connected to a conductive portion 81, and the second side face portion 11b is electrically connected to a different conductive portion 81. Each of the plurality of conductive portions 81 need not necessarily be connected to the first semiconductor layer 10. In the following, a conductive portion 81 electrically connected to the second electrode 12 is referred to as a first conductive portion 81a. A conductive portion 81 electrically connected to the first side face portion 11a is referred to as a second conductive portion 81b. A conductive portion 81 electrically connected to the second side face portion 11b is referred to as a third conductive portion 81c. The semiconductor light emitting element 110 further includes, for example, a metal layer 40 (conductive layer), a first insulating layer 41, a second insulating layer 42, and a third insulating layer 43. The metal layer 40 is provided between the two second electrodes 12 and the support substrate 80. The metal layer 40 is electrically connected to the second electrode 12 and at least one of the plurality of conductive portions 81. The metal layer 40 is, for example, in contact with each of the two second electrodes 12. In this way the metal layer 40 is electrically connected to each of the two second electrodes 12. Also, the metal layer 40 is in contact with, for example, the top face 80u. In this way the metal layer 40 is electrically connected to at least one of the plurality of conductive portions 81. In other words, the portion of the conductive portions 81 in contact with the metal layer 40 and the first metal portions 83 is a first conductive portion 81a. The metal layer 40 increases the contact between the second electrode 12 and the first metal portions 83, for example. The first metal portions 83 increase the contact between the metal layer 40 and the conductive portions 81, for example. The metal layer 40 is electrically insulated from the side face 80sa by at least one insulating portion 82 disposed between the first conductive portion 81a and the side face 80sa of the support substrate 80. Also, in this example, the metal layer 40 is electrically insulated from the side face 80sb by at least one insulating portion 82 disposed between the first conductive portion 81a and the side face 80sb of the support substrate 80. At least one insulating portion 82 is disposed between the side face 80sa and the portion of the metal layer 40 closest to the side face 80sa, when projected onto a plane parallel with the top face 80u (the X-Y plane). In this way, the metal layer 40 is electrically insulated from the side face 80sa. The metal layer 40 includes a side face 40s that extends in the Y-axis direction. The side face 40s is oriented in substantially the same direction as the side face 80sa, for example. The side face 40s is substantially parallel to the side face 80sa, for example. In this example, the side face 40s is the portion of the metal layer 40 closest to the side face 80sa. In other words, at least one insulating portion 82 is disposed between the side face 80sa and the side face 40s, when projected onto the X-Y plane. For example, if the side face 40s and the side face 80sa intersect, the portion with the shortest distance between the side face 40s and the side face 80sa is the portion closest to the side face 80sa. For example, at least any of Ti, W, Pt, Au, Cu, Ni, Ag, Co, Sn, Pd, and Al can be used in the metal layer 40. For example, an alloy that includes at least any of Ti, W, Pt, Au, Cu, Ni, Ag, Co, Sn, Pd, and Al can be used in the metal layer 40. For example, a metal with high reflectance such as Ag and the like can be used in the metal layer 40. In this way, it is possible to, for example, promote reflection of light, and increase the light extraction efficiency. The metal layer 40 may have a single layer structure made from a single metal material, or it may have a multi-layer structure made from not fewer than two metal materials, for example. The metal layer 40 may be omitted, and the second electrode 12 made to contact the top face 80u, for example. In this case, the second electrode 12 becomes a conductive layer. The first insulating layer 41 is provided between the first electrode 11 and the second semiconductor layer 20, and between the first electrode 11 and the light emitting layer 30. The first insulating layer 41 electrically insulates the first electrode 11 and the second semiconductor layer 20. The first insulating layer 41 electrically insulates the first electrode 11 and the light emitting layer 30. The second insulating layer 42 is provided between the first electrode 11 and the second electrode 12. In this example, the second insulating layer 42 is provided between the first electrode 11 and each of the two second electrodes 12. The second insulating layer 42 insulates the first electrode 11 and the second electrode 12. The third insulating layer 43 is provided between the first electrode 11 and the metal layer 40. The third insulating layer 43 electrically insulates the first electrode 11 and the metal layer 40. For example, at least any of a silicon oxide film, a silicon nitride film, and a silicon oxynitride film can be used in the first insulating layer 41, the second insulating layer 42, and the third insulating layer 43. FIG. 2 is a schematic cross-sectional view illustrating a light emitting device according to the first embodiment. FIG. 2 is a schematic cross-sectional view illustrating a light emitting device 300 using the semiconductor light emitting element 110 as described above. As illustrated in FIG. 2, the light emitting device 300 includes the semiconductor light emitting element 110 and a mounting substrate 200 (second substrate). The mounting substrate 200 supports the semiconductor light emitting element 110. The semiconductor light emitting element 110 is provided on the mounting substrate 200. The mounting substrate 200 includes, for example, a main body part 200a, a pair of first electrode pads 201, and a second electrode pad 202. The main body part 200a is, for example, a rectangular shaped plate. The main body part 200a includes a top face 200u. The top face 200u is opposite the bottom face 80b of the support substrate 80. The width in the X-axis direction of the top face 200u is wider than the width in the X-axis direction of the bottom face 80b. The width in the Y-axis direction of the top face 200u is wider than the width in the Y-axis direction of the bottom face 80b. For example a ceramic or AlN or the like can be used in the main body part 200a. The pair of first electrode pads 201 and the second electrode pad 202 are provided on the top face 200u. One of the first electrode pads 201 is disposed in a position opposite the second conductive portion 81b. The other of the first electrode pads 201 is disposed in a position opposite the third conductive portion 81c. The second electrode pad 202 is disposed in a position opposite the first conductive portion 81a. For example, by mounting the semiconductor light emitting element 110 on the top face 200u, the pair of first electrode pads 201 and the second electrode pad 202 contact the opposing second metal portion 84. In this way, one of the first electrode pads 201 is electrically connected to the second conductive portion 81b. The other of the first electrode pads 201 is electrically connected to the third conductive portion 81c. The second electrode pad 202 is electrically connected to the first conductive portion 81a. In other words, each of the first electrode pads 201 is electrically connected to the first electrode 11 via the second conductive portion 81b and the third conductive portion 81c. The second electrode pad 202 is electrically connected to the second electrode 12 via the first conductive portion 81a. Each of the first electrode pads 201 is electrically connected to the first semiconductor layer 10, and the second electrode pad 202 is electrically connected to the second semiconductor layer 20. The plurality of second metal portions 84 increases the contact between each pad 201, 202 and the conductive portions 81, for example. The mounting substrate 200 includes, for example, a wiring pattern. The semiconductor light emitting element 110 is electrically connected to the wiring pattern of the mounting substrate 200 via each of the pads 201, 202, for example. In more detail, the first semiconductor layer 10 and the second semiconductor layer 20 of the semiconductor light emitting element 110 are electrically connected to the wiring pattern of the mounting substrate 200. In semiconductor light emitting elements, an electrode pad is provided on the top face of the first semiconductor layer, and the electrode pad of the mounting substrate and the electrode pad of the first semiconductor layer are connected using bonding wire. The area of the electrode pad is comparatively large compared with the area of the first semiconductor layer. Therefore, in semiconductor light emitting elements of this type, the light emitted from the light emitting layer is reflected at the electrode pad, and the light extraction efficiency is reduced. Also, the light emitting area (the area of the portion of the top face of the first semiconductor layer on which the first electrode is not provided) is small. For example, if the size of the top face of the first semiconductor layer is 400 μm square, and the size of the electrode pad is 100 μm square, the light emitting area is reduced by about 6.3%. If the light emitting area is reduced then, for example, the current density is increased. For example, the luminous efficiency is reduced. In contrast, in the semiconductor light emitting element 110 according to this embodiment and the light emitting device 300 using this semiconductor light emitting element 110, the electrode pad is not provided on the first semiconductor layer 10, and the first electrode 11 and the first electrode pad 201, and the second electrode 12 and the second electrode pad 202 can be electrically connected via, for example, the conductive portions 81. Therefore, in the semiconductor light emitting element 110 according to this embodiment and the light emitting device 300 using this semiconductor light emitting element 110, it is possible to minimize the reduction in the light extraction efficiency. It is possible to obtain a high light extraction efficiency. In addition, in the semiconductor light emitting element 110 and the light emitting device 300 using the semiconductor light emitting element 110, it is possible to minimize the reduction in light emitting area, for example. For example, it is possible to reduce the current density and minimize the reduction in luminous efficiency. FIGS. 3A to 3G are cross-sectional views schematically illustrating the process of manufacturing a support substrate according to the first embodiment. As illustrated in FIG. 3A, in the manufacture of the support substrate 80, first a conductive substrate 80c that includes the material that will form the conductive portions 81 is prepared. The conductive substrate 80c is, for example, a silicon substrate, a metal substrate, or the like. The thickness of the conductive substrate 80c (the thickness in the Z-axis direction) is greater than the thickness of the support substrate 80. As illustrated in FIG. 3B, a plurality of grooves 80v is formed in the conductive substrate 80c by, for example, a photolithography process and an etching process. The shape of each groove 80v is in accordance with the shape of each insulating portion 82. In this example, each groove 80v extends in the Y-axis direction and the Z-axis direction, and the grooves 80v are arranged in the X-axis direction. The width in the X-axis direction of each groove 80v and the spacing of each groove 80v are substantially the same as those of each insulating portion 82. As illustrated in FIG. 3C, insulating material is applied onto the conductive substrate 80c by, for example, spin on glass (SOG), and by filling each groove 80v with the insulating material, an insulating film 82f is formed on the conductive substrate 80c. The material of the insulating film 82f is substantially the same as the material of each insulating portion 82. The material of the insulating film 82f can be, for example, a liquid in which SiO2 is dissolved in a solvent or the like. As illustrated in FIG. 3D, the insulating film 82f is ground using, for example, a grinding process. In this way, each of the insulating portions 82 is formed from the insulating film 82f. As illustrated in FIG. 3E, each first metal portion 83 is formed on a portion that will constitute each conductive portion 81 of the conductive substrate 80c, by for example, a photolithography process, an etching process, and a film forming process, or the like. Then, a separately formed stacked body SB or the like is bonded on each insulating portion 82 and each first metal portion 83. As illustrated in FIG. 3F, after bonding the stacked body SB or the like, the conductive substrate 80c is ground from the reverse face side, and the ends of each insulating portion 82 are exposed. Grinding from the reverse face side may be carried out, for example, before bonding the stacked body SB or the like. As illustrated in FIG. 3G, each conductive portion 81 is formed from the conductive substrate 80c, and each second metal portion 84 is formed on the bottom of each conductive portion 81, by for example, a photolithography process, an etching process, and a film making process, or the like. As a result of the above the support substrate 80 is completed. The top face 80u of the support substrate 80 includes a first region R1 that is electrically connected to the first semiconductor layer 10, and a second region R2 that is electrically connected to the second semiconductor layer 20 (see FIG. 1). The spacing Pt of each of the plurality of insulating portions 82 is, for example, not more than the distance D1 in the X-axis direction between the first region R1 and the second region R2. More specifically, the first region R1 is the region on the top face 80u opposite the
{'application_number': '<application-reference appl-type="utility">\n<document-id>\n<country>US</country>\n<doc-number>14826296</doc-number>\n<date>20150814</date>\n</document-id>\n</application-reference>', 'publication_number': '<publication-reference>\n<document-id>\n<country>US</country>\n<doc-number>20150357523</doc-number>\n<kind>A1</kind>\n<date>20151210</date>\n</document-id>\n</publication-reference>', 'source_file': './application/2015/ipa151210.xml', 'source_data': 'USPTO-Application'}