A technique used to reduce the magnitude of threshold voltage of MOSFET is the ___________
A. Use of complementary MOSFET
B. Use of Silicon nitride
C. Using thin film technology
D. Increasing potential of the channel
Answer:B
A technique used to reduce the magnitude of threshold voltage of MOSFET is the ___________
A. Use of complementary MOSFET B. Use of Silicon nitride C. Using thin film technology D. Increasing potential of the channel
Explanation: Silicon nitride is sandwiched between two SiO2 layer and provide necessary barrier. The dielectric constant of Si3N4 is 7.5, whereas that of SiO2 is 4. This increase in overall dielectric constant reduces threshold voltage.