 "Hynix HMA41GR7MFR4N-TF DCZ 8GB 288p PC4-17000 CL15 18c 1024x4 DDR4-2133 1Rx4 1.2V ECC RDIMM"
 "HMA41GR7MFR4N-TF DCZ 8GB 288p PC4-17000 CL15 18c 1024x4 DDR4-2133 1Rx4 1.2V ECC RDIMM"
 "Samsung - DDR4 8 GB DIMM 288-pin" " Samsung 288-pin M393A1G40DB0-CPB System Memory (RAM) CDW.com
"Samsung DDR4 is an optimized solution for highly virtualized environments, high-performance computing and networking.Achieving bandwidth speeds up to 3.2Gbps, Samsung DDR4 delivers higher performance at a higher speed than both DDR2 and DDR3. Compared to DDR3L (low power DDR3), Samsung DDR4 shows an overall improvement in performance in every DIMM and a performance that is more than 40 percent better at 1 DIMM per channel.A major decrease in voltage and the improved I/O power efficiency of DDR4 synchronous dynamic RAM (SDRAM) translates into significant cost savings. According to Samsung internal testing, DDR4 boasts a continuous working voltage of 1.2 V, a voltage that is 11 percent lower than the 1.35 V consumed by DDR3L. By adopting POD (Pseudo Open Drain) for data transmission, Samsung DDR4's input/output (I/O) power consumption is reduced by 50 percent compared to the previously-used SSTL (Stub Series Terminated Logic) of DDR3L. Overall, Samsung DDR4 shows a Performance/watt level more than 20 percent higher than DDR3L." 