69cf3305_bstracts___IEEE_GreenTech_2013__Category____Sub_Category
[Paper Title, Abstract] Scaling Limits of Rectangular and Trapezoidal Channel FinFETs Show AbstractHide Abstract This paper presents a complete analytical model characterizing all the variations of multi-gate MOSFETs including the Tri-gate FinFET, all-around gate FinFET, Trapezoidal FinFET, Double-gate MOSFET, etc. Our presented model gives precise and compact expressions for all the device performance metrics such as drain current, subthreshold swing, threshold voltage, and gate capacitance. These final expressions are obtained without any approximation and are continuous and valid for all the regions of operation of the device. Also, in this paper, for the first time, we answer an important question and determine the ultimate limit for the scaling of Tri-gate FinFET using the results of our analytical model. And finally, in this article, for the first time complete analytical physics based models for all performance metrics of trapezoidal Tri-gate FinFETs and rectangular Tri-gate FinFETs are presented. As a result, a complete comparison between the performance of the two transistors is obtained that shows the advantages and disadvantages of the trapezoidal fin shape instead of the rectangular shape. Having this complete performance comparison is crucial after the recent discovery that Intel’s Tri-gate has trapezoidal fin shape instead of rectangular. [Schedule] FTM-GWSA [Category :: Sub-Category] 
Solar – PV Generation
Abstracts « IEEE GreenTech 2013
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