US silicon carbide ( SiC) power products producer Wolfspeed has launched a 900V 10mΩ SiC metal–oxide–semiconductor field-effect transistor (MOSFET) that runs at 25C and reduces EV drivetrain inverter losses by 78%. —John Palmour, CTO of Wolfspeed Commercially qualified and rated for a maximum operating temperature of 175 ˚C, Wolfspeed’s new chip offers high-reliability in harsh environments, such as those found in vehicle drivetrains. Wolfspeed said its chip functions well in harsh environments, and John Palmour, CTO, added: "Our devices can now support significant efficiency improvements… in EV drivetrains". The new MOSFET is based on the same technology as the company's current generation of high-power MOSFETs for automotive applications, but it uses an additional layer to reduce parasitic capacitance between the gate electrode
US silicon carbide ( SiC) power products producer Wolfspeed has launched a 900V 10mΩ SiC metal–oxide–semiconductor field-effect transistor (MOSFET) that runs at 25C and reduces EV drivetrain inverter losses by 78%. Wolfspeed said its chip functions well in harsh environments, and John Palmour, CTO, added: "Our devices can now support significant efficiency improvements… in EV drivetrains". The new MOSFET is based on the same technology as the company's current generation of high-power MOSFETs for automotive applications, but it uses an additional layer to reduce parasitic capacitance between the gate electrode