β-Ga2O3 epitaxial thin films can be deposited heteroepitaxially on substrates such as sapphire, GaN, SiC, and Si, as well as homoepitaxially.
bˈeɪɾəɡˈɑː tˈuː ˈoʊ θɹˈiː ˌɛpɪtˈeɪksɪəl θˈɪn fˈɪlmz kæn biː dᵻpˈɑːzɪɾᵻd hˌɛɾɚɹˌoʊɪpɪtˈeɪksɪəli ˌɔn sˈʌbstɹeɪts sˈʌtʃ ɐz sˈæfaɪɚ, ɡˈɑː ˈɛn, sˈiː sˈiː, ænd sˈiː, æz wˈɛl æz hˌɑːmoʊpɪtˈeɪksɪəli.