sˈɪns ðə fˈɜːst pˌʌblɪkˈeɪʃən ɪn dʒˈænjuːˌɛɹi tˈuː θˈaʊzənd twˈɛlv baɪ ðə nˈæʃənəl ˈɪnstɪtˌuːt ʌv ˌɪnfɚmˈeɪʃən ænd kəmjˌuːnɪkˈeɪʃənz tɛknˈɑːlədʒi, ɪn kəlˌæbɚɹˈeɪʃən wɪð tæmjˈʊɹɹə kˈoʊ., lˈɪmɪɾᵻd. ænd kˈoʊhə kˈoʊ., lˈɪmɪɾᵻd. ʌvðə wˈɜːldz fˈɜːst sˈɪŋɡəlkɹˈɪstəl ɡˈæliəm ˈɑːksaɪd ɡˈɑː tˈuː ˈoʊ θɹˈiː fˈiːldɪfˈɛkt tɹænzˈɪstɚz, ðə pɹɪdˈɑːmɪnənt ˈɪntɹɛst ɪn ɡˈæliəm ˈɑːksaɪd ɪz ɪnðə bˈeɪɾəpˈɑːlɪmˌoːɹf fɔːɹ pˈaʊɚɹ ᵻlɛktɹˈɑːnɪks.
Since the first publication in January 2012 by the National Institute of Information and Communications Technology, in collaboration with Tamura Co., Ltd. and Koha Co., Ltd. of the world's first single-crystal gallium oxide (Ga2O3) field-effect transistors, the predominant interest in gallium oxide is in the β-polymorph for power electronics.