bˈeɪɾəɪn tˈuː z θɹˈiː ɪz ɐn ˈɛntˈaɪp sˌɛmɪkəndˈʌktɚ wɪð ɐn ˈɑːptɪkəl bˈænd ɡˈæp ʌv tˈuː.wˈʌn ˈiː vˈiː. ɪt hˈæzbiːn pɹəpˈoʊzd tə ɹᵻplˈeɪs ðə hˈæzɚdəs kˈædmiəm sˈʌlfaɪd, sˌiːdˈiː ˈɛs, æz ɐ bˈʌfɚ lˈeɪɚɹ ɪn sˈoʊlɚ sˈɛlz, ænd æz ɐn ɐdˈɪʃənəl sˌɛmɪkəndˈʌktɚ tʊ ɪŋkɹˈiːs ðə pɚfˈoːɹməns ʌv tˈaɪ ˈoʊ tˈuːbˈeɪst fˌoʊɾoʊvoʊltˈeɪɪks.
β-In2S3 is an N-type semiconductor with an optical band gap of 2.1 eV. It has been proposed to replace the hazardous cadmium sulfide, CdS, as a buffer layer in solar cells, and as an additional semiconductor to increase the performance of TiO2-based photovoltaics.