ɡˈɑː tˈuː ˈoʊ θɹˈiː ɛɡzˈɪbɪts ɹᵻdˈuːst θˈɜːməl kɑːndəktˈɪvᵻɾi ænd ᵻlˈɛktɹɑːn moʊbˈɪlᵻɾi baɪ ɐn ˈɔːɹdɚɹ ʌv mˈæɡnɪtˌuːd kəmpˈɛɹd tə ɡˈɑː ˈɛn ænd sˈiː sˈiː, bˌʌt ɪz pɹɪdˈɪktᵻd təbi sɪɡnˈɪfɪkəntli mˈoːɹ kˈɔstɪfˈɛktɪv dˈuː tə bˌiːɪŋ ðɪ ˈoʊnli wˈaɪdbˈændɡæp mətˈɪɹiəl kˈeɪpəbəl ʌv bˌiːɪŋ ɡɹˈoʊn fɹʌm mˈɛlt.
Ga2O3 exhibits reduced thermal conductivity and electron mobility by an order of magnitude compared to GaN and SiC, but is predicted to be significantly more cost-effective due to being the only wide-bandgap material capable of being grown from melt.