θˈɪn fˈɪlmz ʌv ˈɛpsɪlˌɑːnɡˈɑː tˈuː ˈoʊ θɹˈiː ɑːɹ dᵻpˈɑːzɪɾᵻd baɪ mˈiːnz ʌv mˌɛɾəloːɹɡˈænɪk vˈeɪpɚfˈeɪz ˈɛpɪtˌæksi jˈuːzɪŋ tɹˌaɪmɪθəlɡˈæliəm ænd wˈɔːɾɚɹ ˌɔn sˈæfaɪɚ sˈʌbstɹeɪts æt tˈɛmpɹɪtʃɚz bᵻtwˌiːn fˈaɪvhˈʌndɹɪd fˈɪfti ænd sˈɪkshˈʌndɹɪd fˈɪfti dᵻɡɹˈiːz sˈiː
Thin films of ε-Ga2O3 are deposited by means of metalorganic vapour-phase epitaxy using trimethylgallium and water on sapphire substrates at temperatures between 550 and 650 °C