ˌɛpɪtˈeɪksɪəl θˈɪn fˈɪlmz ʌv ˈælfəɡˈɑː tˈuː ˈoʊ θɹˈiː dᵻpˈɑːzɪɾᵻd ˌɔn sˈiːplˈeɪn zˈiəɹoʊzˈiəɹoʊzˈiəɹoʊwˈʌn, ˈɛmplˈeɪn wˈʌnhˈʌndɹɪd, ɔːɹ ˈeɪplˈeɪn wˈʌnhˈʌndɹɪd tˈɛn sˈæfaɪɚ sˈʌbstɹeɪts hɐvbɪn dˈɛmənstɹˌeɪɾᵻd.
Epitaxial thin films of α-Ga2O3 deposited on c-plane (0001), m-plane (100), or a-plane (110) sapphire substrates have been demonstrated.