pɹˈɑːsɛs kəntɹˈoʊl ˈɪʃuːz—bˈoʊθ fɚðɪ ɪntɹˈɪnsɪk dɪvˈaɪsᵻz ænd ˈɔːl ðɪ ɐsˈoʊsɪˌeɪɾᵻd pˌæɹəsˈɪɾɪks—pɹɪzˈɛntᵻd fɔːɹmˈɪdəbəl tʃˈælɪndʒᵻz ænd mændˈeɪɾᵻd ðə dɪvˈɛləpmənt əvɚ ɹˈeɪndʒ ʌv ɐdvˈænst fˈɪzɪkəl mˈɑːdəlz fɔːɹ pɹˈɑːsɛs ænd dɪvˈaɪs sˌɪmjʊlˈeɪʃən.
Process control issues—both for the intrinsic devices and all the associated parasitics—presented formidable challenges and mandated the development of a range of advanced physical models for process and device simulation.