ðə bˈeɪɾəfˈeɪzᵻz bˈændɡæp ʌv fˈoːɹ.sˈɛvən fˈoːɹ.nˈaɪn ˈiː vˈiː ænd lˈɑːɹdʒˈɛɹiə, nˈeɪɾɪv sˈʌbstɹeɪts mˌeɪk ɪɾ ɐ pɹˈɑːmɪsɪŋ kəmpˈɛɾɪɾɚ tə ɡˈɑː ˈɛn ænd sˈiː sˈiːbˈeɪst pˈaʊɚɹ ᵻlɛktɹˈɑːnɪks ˌæplɪkˈeɪʃənz ænd sˈoʊlɚblˈaɪnd jˌuːvˈiː fˌoʊɾoʊdɪtˈɛktɚz.
The β-phase’s bandgap of 4.7–4.9 eV and large-area, native substrates make it a promising competitor to GaN and SiC-based power electronics applications and solar-blind UV photodetectors.