hˈæfniəm ˈɑːksaɪd æz wˈɛl æz dˈoʊpt ænd ˈɑːksɪdʒəndᵻfˈɪʃənt hˈæfniəm ˈɑːksaɪd ɐtɹˈækts ɐdˈɪʃənəl ˈɪntɹɛst æz ɐ pˈɑːsᵻbəl kˈændᵻdˌeɪt fɔːɹ ɹᵻsˈɪstɪvswˈɪtʃɪŋ mˈɛmɚɹiz ænd sˈiːmˈɑːskəmpˈæɾᵻbəl fˌɛɹoʊlˈɛktɹɪk fˈiːld ɪfˈɛkt tɹænzˈɪstɚz fˈiː ˌɛfˌiːtˈiː mˈɛmɚɹi ænd mˈɛmɚɹi tʃˈɪps.
Hafnium oxide (as well as doped and oxygen-deficient hafnium oxide) attracts additional interest as a possible candidate for resistive-switching memories and CMOS-compatible ferroelectric field effect transistors (FeFET memory) and memory chips.