bˈeɪɾəɡˈɑː tˈuː ˈoʊ θɹˈiː ˌɛpɪtˈeɪksɪəl θˈɪn fˈɪlmz kæn biː dᵻpˈɑːzɪɾᵻd hˌɛɾɚɹˌoʊɪpɪtˈeɪksɪəli ˌɔn sˈʌbstɹeɪts sˈʌtʃ ɐz sˈæfaɪɚ, ɡˈɑː ˈɛn, sˈiː sˈiː, ænd sˈiː, æz wˈɛl æz hˌɑːmoʊpɪtˈeɪksɪəli.
β-Ga2O3 epitaxial thin films can be deposited heteroepitaxially on substrates such as sapphire, GaN, SiC, and Si, as well as homoepitaxially.