bˈeɪɾəɡˈɑː tˈuː ˈoʊ θɹˈiː ˌɛpɪtˈeɪksɪəl fˈɪlmz ɡɹˈoʊn baɪ mˈɑːvp ɛɡzˈɪbɪt hˈaɪɚɹ ᵻlˈɛktɹɑːn moʊbˈɪlᵻɾiz ænd lˈoʊɚ bˈækɡɹaʊnd kˈæɹiɚ kˌɑːnsəntɹˈeɪʃənz ðɐn ðoʊz ɡɹˈoʊn baɪ ˈʌðɚ θˈɪnfˈɪlm ɡɹˈoʊθ tɛknˈiːks.
β-Ga2O3 epitaxial films grown by MOVPE exhibit higher electron mobilities and lower background carrier concentrations than those grown by other thin-film growth techniques.