bˈeɪɾəɡˈɑː tˈuː ˈoʊ θɹˈiː skˈɑːtki dˈaɪoʊdz hæv ɛksˈiːdᵻd bɹˈeɪkdaʊn vˈoʊltɪdʒᵻz ʌv tˈuː θˈaʊzənd fˈoːɹhˈʌndɹɪd vˈiː. bˈeɪɾəɡˈɑː tˈuː ˈoʊ θɹˈiː slˈæʃ nˈaɪ ˈɑːks pˈiː ˈɛn dˈaɪoʊdz hæv ɛɡzˈɪbɪɾᵻd bɹˈeɪkdaʊn vˈoʊltɪdʒᵻz ˌoʊvɚ wˈʌn θˈaʊzənd tˈuːhˈʌndɹɪd vˈiː. bˈeɪɾəɡˈɑː tˈuː ˈoʊ θɹˈiː mˈɑːsfɪt hæv ˌɪndᵻvˈɪdʒuːəli ɐtʃˈiːvd fˈɪɡjɚz ʌv mˈɛɹɪts ʌv ˈɛf tˈiː ʌv twˈɛnti sˈɛvən ɡˈɪɡəhˌɜːts, ˈɛf mˈæks ʌv fˈoːɹɾi ˈeɪt ɡˈɪɡəhˌɜːts, ænd fˈaɪv.fˈoːɹ ˌɛmvˈiː slˈæʃ sˌiːˈɛm ˈævɹɪdʒ bɹˈeɪkdaʊn fˈiːld.
β-Ga2O3 Schottky diodes have exceeded breakdown voltages of 2400 V. β-Ga2O3/NiOx p–n diodes have exhibited breakdown voltages over 1200 V. β-Ga2O3 MOSFETs have individually achieved figures of merits of  fT of 27 GHz, fMAX of 48 GHz, and 5.4 MV/cm average breakdown field.