hˈæfniəmbˈeɪst ˈɑːksaɪdz wɜːɹ ˌɪntɹədˈuːst baɪ ˈɪntɛl ɪn tˈuː θˈaʊzənd sˈɛvən æz ɐ ɹᵻplˈeɪsmənt fɔːɹ sˈɪlɪkən ˈɑːksaɪd æz ɐ ɡˈeɪt ˈɪnsəlˌeɪɾɚɹ ɪn fˈiːldɪfˈɛkt tɹænzˈɪstɚz.
Hafnium-based oxides were introduced by Intel in 2007 as a replacement for silicon oxide as a gate insulator in field-effect transistors.