films and claimed the presence of multi-phase mixtures, consisting of hole doped La-deficient phases with cerium oxide inclusions. Certainly, the existence of electron-doped manganites could enable new types of spintronic devices, such as $p-n$ junctions based on doped manganites.[@Mitra01] This motivates further research in order to improve understanding of the basic properties of those materials.

In this paper we present the results of studies on transport, magnetic and structural properties of LCeMO thin films grown by pulsed laser deposition (PLD) and their dependence on deposition parameters, annealing procedures and film thickness. We combine a variety of different characterization techniques in order to clarify the nature of the FP and MI transition in our LCeMO thin films.

Experimental Details {#Sec:Experiment}
====================

A commercially available stoichiometric polycrystalline La$_{0.7}$Ce$_{0.3}$MnO$_3$ target was used for thin film growth by PLD on (001) SrTiO$_3$ (STO) substrates (unless stated otherwise). The target was ablated by using a KrF ($\lambda$ = 248 nm) excimer laser at a repetition rate of $2-5\,$Hz. The energy density on the target was $E_d=2\,{\rm J/cm}^2$, while the substrate temperature during deposition was kept at $T_s=720\,^{\circ}$C for all films for which data are presented below, except for sample K with slightly lower $T_s$ and $E_d$ (cf. Tab. \[tab:overview\]). The oxygen pressure $p_{O_2}$ during film growth was varied in the 1–25Pa range with the aim of yielding single phase films with optimum morphology. We used a relatively low deposition pressure as compared to some literature data [@Mitra03a; @Wang06; @Mitra01; @Chang04] in order to avoid over-oxygenation of the films. This is important, as it is known that perovskite rare-earth manganites can accept a large excess of oxygen via the formation of cation vacancies, inducing hole-doping in the parent compound LaMnO$_3$.[@Toepfer97] In-situ high-pressure reflection high energy electron diffraction (RHEED) was used to monitor the growth mode and film thickness. After deposition, most of the films were in-situ
films and claimed the presence of multi - phase mixtures, consist of fix doped La - deficient phases with cerium oxide inclusion. Certainly, the existence of electron - dope manganites could enable new type of spintronic devices, such as $ p - n$ junction based on doped manganites.[@Mitra01 ] This motivate further research in order to improve understanding of the basic properties of those materials. 

 In this paper we salute the results of studies on transport, charismatic and structural properties of LCeMO slender films turn by pulsed laser deposition (PLD) and their dependence on deposition parameters, anneal procedures and film thickness. We combine a variety of different characterization technique in order to clarify the nature of the FP and MI transition in our LCeMO thin films. 

 Experimental Details { # Sec: Experiment } 
 = = = = = = = = = = = = = = = = = = = = 

 A commercially available stoichiometric polycrystalline La$_{0.7}$Ce$_{0.3}$MnO$_3 $ target was used for thin film growth by PLD on (001) SrTiO$_3 $ (STO) substrates (unless stated differently). The prey was ablated by use a KrF ($ \lambda$ = 248 nm) excimer laser at a repeat rate of $ 2 - 5\,$Hz. The energy density on the target was $ E_d=2\,{\rm J / cm}^2 $, while the substrate temperature during deposition was kept at $ T_s=720\,^{\circ}$C for all films for which data are give below, except for sample K with slightly lower $ T_s$ and $ E_d$ (cf.   Tab.   \[tab: overview\ ]). The oxygen pressure $ p_{O_2}$ during film emergence was varied in the 1–25 Pa range with the aim of yielding single phase film with optimum morphology. We practice a relatively low deposition pressure as compared to some literature data [ @Mitra03a; @Wang06; @Mitra01; @Chang04 ] in holy order to avoid over - oxygenation of the films. This is important, as it is known that perovskite rare - earth manganites can accept a large overindulgence of oxygen via the formation of cation void, inducing hole - doping in the parent compound LaMnO$_3$.[@Toepfer97 ] In - situ eminent - pressure contemplation high energy electron diffraction (RHEED) was practice to monitor the growth mood and film thickness. After deposition, most of the film were in - situ
fills and claimed the presekce of multi-phasg nixturxs, consjsting ow hole doped La-deficient phadew wity cerium oxide inclusiuns. Certapnly, the wxisuence of electron-vkped makyanitsd coblv enable new tykes of spintsonic devices, vuzh as $p-n$ junctions based on doped mandanites.[@Kihra01] This motivwtes surtgvr research in order to improve undersuanding of the basoc properties of those matfriaps.

In this paper we present thg refylts of studkes on transport, magnejic and structural properties of LCeMP thin filns grlfn by pulsev laseg deposition (IKD) and their cependence on cepmsirion parameters, anneaning procedures anq film thhciness. We combine q cariejy of difwwrevt dheradterizwtikn techniqhes in ordee to clarify the nauurq of the FP ans MI twagsition in our LCeMO thin films.

Experimettam Details {#Sec:Experiment}
====================

Q commercially availahle stoicriometric polycrystalline La$_{0.7}$Ce$_{0.3}$MnO$_3$ target was used for vhkn yljo ggowth by PLD on (001) SrTiO$_3$ (STO) substrates (unless ffaued otherwise). The target was ahlsjed by using a KrF ($\lcjbsa$ = 248 nm) excimer lader at w repwtition rwte pf $2-5\,$Hz. The energy density on the target cas $E_d=2\,{\rm J/cm}^2$, while thz substrate cempersture during deposition was yept at $T_s=720\,^{\circ}$C for all rklms for which dxta ase presented below, except sor samplx K wnth sligftly lower $T_s$ and $E_d$ (cf. Tan. \[dab:overview\]). The oxjgen kressuse $p_{O_2}$ durijg film growth was varied in thx 1–25Pa range wijh dhe aim of vieldikg single phase films with opjimum mor'hologh. We used z relatmvely low de[osition presvore as comparxd to somq lirerarure dagx [@Mitra03a; @Wang06; @Kitra01; @Chauy04] in ordee to avoid over-oxynenatkkn of the films. Thus is important, as it id lnjfn that peroeskige fsre-eafth manganibes can accept a large excevs or oxygen via the fpriation od cation vacancies, incucing hole-doping ln thx pareit comlougd LaMnO$_3$.[@Toepfer97] In-situ high-preasure refpecbion high enewgy clecjron diffraetion (RHEED) was used to monitor the growvh mode and film thicknwss. After depositiou, kost of the filmf were in-vitu
films and claimed the presence of multi-phase of doped La-deficient with cerium oxide electron-doped could enable new of spintronic devices, as $p-n$ junctions based on doped This motivates further research in order to improve understanding of the basic properties those materials. In this paper we present the results of studies on transport, and properties LCeMO films grown by pulsed laser deposition (PLD) and their dependence on deposition parameters, annealing procedures and thickness. We combine a variety of different characterization in order to clarify nature of the FP and transition our LCeMO films. Details ==================== A commercially stoichiometric polycrystalline La$_{0.7}$Ce$_{0.3}$MnO$_3$ target was used for thin film growth by PLD on (001) SrTiO$_3$ (STO) substrates stated otherwise). was ablated using KrF = 248 nm) at a repetition rate of $2-5\,$Hz. on the target was $E_d=2\,{\rm J/cm}^2$, while the temperature during was kept at $T_s=720\,^{\circ}$C for all for which data are presented below, except for K with slightly lower $T_s$ and $E_d$ (cf. Tab. \[tab:overview\]). The oxygen pressure $p_{O_2}$ during was varied in the range with the of single films optimum morphology. used a relatively low deposition pressure as compared to some literature [@Mitra03a; @Wang06; @Mitra01; @Chang04] in order to avoid over-oxygenation of This important, as it known that perovskite rare-earth can a large excess of the of hole-doping the compound LaMnO$_3$.[@Toepfer97] In-situ high-pressure high energy electron diffraction (RHEED) used to monitor the After deposition, most of the films were in-situ
films and claimed the presencE of multi-phAse miXtuRes, CoNsisTing Of hole doped La-dEFiciEnt phases with cerium oxiDe incLuSIons. cErTainlY, the exiSTeNCE of ElEcTroN-dOPeD mangAniTes coulD enable new TypEs Of spintronic DEvIces, such as $P-n$ jUnctions baseD on Doped mAnGanITes.[@MiTra01] this mOtivatES furthEr researcH iN Order tO Improve UNDeRstaNding of the basic prOPeRTies of those matErials.

in THiS PApeR we Present the ReSults OF studieS On TRANspORt, magnetic and Structural pROpeRties oF LceMo Thin fiLms grOwN By pUlsed laser dEposItion (PLD) aNd theiR DependeNCe on depOsitioN paRamEterS, AnNeAliNg PRocEDuRes ANd fIlm thickNeSs. we comBine A VARIety Of dIffeRent cHaracterizatiOn tEchnIQueS in orDer to ClarIfY the nAture oF the Fp aNd MI transition iN our lCeMO thin FilMs.

expErImentAL DetaiLs {#SEc:EXperimeNt}
====================

A commERciAlLY AVaIlable stoichiometrIc POLyCrystallIne La$_{0.7}$CE$_{0.3}$mno$_3$ tARget was uSeD foR thiN FIlm grOwth BY PlD on (001) SrTio$_3$ (STO) suBStRaTes (unleSs Stated OtHerWisE). The tARget Was ablAted by usIng a KRf ($\lambda$ = 248 nm) excimER laser at a repeTItION rATe of $2-5\,$hz. THe energy denSity ON the TargET wAs $E_D=2\,{\Rm J/cm}^2$, While ThE SuBStrate temperature duRiNg depoSitioN was kept at $T_s=720\,^{\cIrc}$C for all FILMs for whiCh daTA aRE presented beloW, excePt for samplE k with sliGhtly Lower $T_s$ aNd $E_d$ (cf. Tab. \[TAB:overvieW\]). ThE oxYgeN prESSuRe $p_{O_2}$ during filM GRowtH wAs varieD in The 1–25Pa raNge WitH thE aiM oF yielding Single phAsE fIlMs WitH optiMUm morphoLoGy. WE uSed A relaTIvely lOw depOsitIoN pREssUre as coMPaRED to sOmE lIterAtuRe Data [@MItra03A; @wanG06; @Mitra01; @CHang04] in ordEr tO AvoiD oVeR-oxygenAtion of the filMs. this is impoRtAnt, As it is KNOwn that pErovskite rare-earth mangaNItes can AccEpt a lArge Excess of oXygEn via tHe fORmatioN of catIon vaCaNciES, InducING hOle-DoPing in the pAREnt CompoUnD LaMNO$_3$.[@ToepfEr97] In-situ high-pressuRE reFlection high eNerGy elECTrOn dIFfRActIoN (rHEed) Was used to monitoR the growth MoDE aNd film thicKNesS. AFter depOsition, Most oF The filmS were in-siTu
films and claimed the pres ence of mu lti-p has e m ix ture s, c onsisting of h o le d oped La-deficient phas es wi th ceri u moxide  inclus i on s .  Ce rt ai nly ,t he  exis ten ce of e lectron-do ped  m anganites co u ld  enable ne w t ypes of spin tro nic de vi ces ,  such  as  $p-n $ junc t ions b ased on d op e d mang a nites.[ @ M it ra01 ] This motivatesf ur t her research i n orde rt oi m pro veunderstand in g oft he basi c  p r o p ert i es of those m aterials.
I n t his pa pe r w e  prese nt th er esu lts of stud ieson transp ort, m a gnetica nd stru ctural  pr ope rtie s  o fLCe MO thi n  f ilm s  gr own by p ul se d las er d e p o s itio n ( PLD)  andtheir depende nce  ond epo sitio n par amet er s, an nealin g pro ce dures and filmthic kness. We  co mb ine  a  vari e ty ofdif fer ent cha racteri z ati on t e ch niques in order to  c l a ri fy the n atureo fth e  FP andMI  tr ansi t i on in  our LC eMO thin  films . 
Ex perimen ta l Deta il s { #Se c:Exp e rime nt}
== ======== ===== = ====

A commer c ially availab l es t oi c hiom etr ic polycrys tall i ne L a$_{ 0 .7 }$C e $_{0. 3}$Mn O$ _ 3$ target was used for  t hin fi lm gr owth by PLD o n (001) Sr T i O $_3$ (ST O) s u bs t rates (unlessstate d otherwis e ). The t arget  was abl ated by u s i ng a KrF  ($ \la mbd a$= 24 8 nm) excimer l aser  a t a rep eti tion ra teof$2- 5\, $H z. The en ergy den si ty  o nthe  targ e t was $E _d =2\ ,{ \rm  J/cm } ^2$, w hilethesu bs t rat e tempe r at u r e du ri ng  dep osi ti on wa s ke p t a t $T_s= 720\,^{\c irc } $C f or  a ll film s for which d at a are pres en ted  below , except f or sample K with slight l y lower  $T _s$ a nd $ E_d$ (cf.  Ta b. \[t ab: o vervie w\]).The o xy gen p ressu r e  $ p_{ O_ 2}$ during f ilm  grow th  was  varied  in the 1–25Pa ran g e w ith the aim o f y ield i n gsin g le pha se fil m s  with optimum m orphology.  W e  u sed a rela t ive ly  low de positio n pre s sure as  compared  to someli tera t u redata [@Mit ra03a; @ Wang06; @ M itra0 1 ;@Chan g04 ] in o rd erto av oid ov e r-o xygen ationof  the f ilms.  T his is i mportant, as it is know n that  pero vsk ite rare- ear t h m anganites  can  accept alar geexces s o f  oxyg en v i athe forma tion of cation va can c i es , inducingh o l e-d oping  in the pa rent  compound LaMnO$_ 3 $.[@Toepfer97]  In- s i tuhig h -pre ss ure reflection  hi gh e nergy el ec tron diffra ction (R HE E D) wa s used  to mo nitor t h e  g r owth m odeand  film thi ckn es s . After  d ep o sition , mo st  of th e film s  wer e in-situ
films and_claimed the_presence of multi-phase mixtures,_consisting of_hole_doped La-deficient_phases_with cerium oxide_inclusions. Certainly, the_existence of electron-doped manganites_could enable new_types_of spintronic devices, such as $p-n$ junctions based on doped manganites.[@Mitra01] This motivates further_research_in order_to_improve_understanding of the basic properties_of those materials.

In this paper_we present_the results of studies on transport, magnetic and_structural_properties of LCeMO_thin films grown by pulsed laser deposition (PLD) and_their dependence on deposition parameters, annealing_procedures and film_thickness._We_combine a variety of_different characterization techniques in order to_clarify the nature of the FP_and MI transition in our LCeMO thin_films.

Experimental Details {#Sec:Experiment}
====================

A commercially available stoichiometric_polycrystalline La$_{0.7}$Ce$_{0.3}$MnO$_3$ target was used_for thin_film growth by PLD on_(001) SrTiO$_3$ (STO)_substrates (unless_stated otherwise). The_target was ablated by using a_KrF ($\lambda$ =_248 nm) excimer laser at a_repetition_rate of $2-5\,$Hz._The_energy_density on_the target was_$E_d=2\,{\rm_J/cm}^2$, while_the_substrate temperature during deposition was kept_at_$T_s=720\,^{\circ}$C for all films for which data_are presented below, except_for_sample K with slightly_lower $T_s$ and $E_d$ (cf. Tab. \[tab:overview\])._The oxygen pressure $p_{O_2}$ during film_growth was_varied in_the 1–25Pa range with the aim of yielding single phase films_with optimum morphology. We used a_relatively low deposition pressure_as compared_to_some literature data_[@Mitra03a;_@Wang06; @Mitra01;_@Chang04] in order to avoid over-oxygenation of_the films._This is important, as it is_known that perovskite rare-earth_manganites_can accept a large excess of_oxygen via the formation of cation_vacancies, inducing hole-doping in the_parent_compound_LaMnO$_3$.[@Toepfer97] In-situ high-pressure reflection high_energy electron diffraction (RHEED) was used_to monitor the_growth mode and film thickness. After deposition,_most_of the films were in-situ