 a coefficient that depends on the Coulomb interaction strength $\alpha$, which in turn depends on the dielectric environment of graphene. Quantitative aspects of these calculations were disputed by @Lischner2013pos who included vertex corrections neglected in the $GW$ scheme. Compared to @Polini2008pat, for the same $\alpha$ @Lischner2013pos find a broader plasmaron peak at a smaller separation from the primary band, which appears to be in a better agreement with the experiments of @Bostwick2010oop.

No evidence of the plasmaron band has been reported in samples where decoupling of graphene from the buffer later was achieved by either gold or fluorine intercalation [@Walter2011hpd; @Starodub2011ipo]. This has been attributed to a stronger dielectric screening by the buffer layer. An alternative interpretation of the apparent nonlinearity of the Dirac spectrum of graphene on SiC invokes a substrate-induced band gap [@Zhou2007sib; @Zhou2008kaa; @Zhou2008oot; @Benfatto2008sso; @Kim2008ooa], see Sec. \[sec:substrate\] below.

![\[fig:3.6.2\] (Color online) The ARPES dispersion of doped ($N = 8 \times 10^{10}\,\text{cm}^{-2}$) graphene perpendicular (a) and parallel (b) to the $\Gamma$-$\mathrm{K}$ direction [@Bostwick2010oop]. The dashed black lines are guides to the eye for the dispersion of the hole and plasmaron bands; the solid red line goes through the Dirac point. The inset shows a schematic of the renormalized spectrum in the presence of plasmarons.](Basov_Fig11){width="3.1in"}

Induced effects {#sec:Induced}
===============

Inhomogeneities and disorder {#sec:Inhomogeneities}
----------------------------

Intentional and unintentional doping by charged impurities plays a very important role in the electronic phenomena of graphene. It is unclear if there is a single dominant source of unintentional doping even for most studied type of samples: exfoliated graphene on SiO$_2$. In addition to adsorbates from the ambient atmosphere, doping could also result from charged defects in SiO$_2$ [@Adam2007sct; @Wehling2007mdo; @Schedin2007doi; @Zhou2008mti; @Coletti2010cna] lithographic residues
a coefficient that depends on the Coulomb interaction strength $ \alpha$, which in turn depends on the dielectric environment of graphene. Quantitative view of these calculation were disputed by @Lischner2013pos who included vertex corrections fail in the $ GW$ scheme. Compared to @Polini2008pat, for the like $ \alpha$ @Lischner2013pos find a broader plasmaron peak at a modest separation from the primary ring, which appears to be in a better agreement with the experiment of @Bostwick2010oop. 

 No evidence of the plasmaron isthmus has been reported in samples where decoupling of graphene from the buffer later was achieve by either gold or fluorine intercalation [ @Walter2011hpd; @Starodub2011ipo ]. This has been attributed to a strong dielectric screening by the buffer zone layer. An alternate interpretation of the apparent nonlinearity of the Dirac spectrum of graphene on SiC invoke a substrate - induced band gap [ @Zhou2007sib; @Zhou2008kaa; @Zhou2008oot; @Benfatto2008sso; @Kim2008ooa ], witness Sec.   \[sec: substrate\ ] below. 

! [ \[fig:3.6.2\ ] (Color online) The ARPES dispersion of doped ($ N = 8 \times 10^{10}\,\text{cm}^{-2}$) graphene perpendicular (a) and parallel (b) to the $ \Gamma$-$\mathrm{K}$ commission [ @Bostwick2010oop ]. The daunt black lines are guides to the eye for the dispersion of the hole and plasmaron band; the upstanding red line goes through the Dirac item. The inset shows a schematic of the renormalized spectrum in the presence of plasmarons.](Basov_Fig11){width="3.1 in " } 

 induce consequence { # sec: Induced } 
 = = = = = = = = = = = = = = = 

 Inhomogeneities and disorder { # sec: inhomogeneity } 
 ---------------------------- 

 Intentional and unintentional doping by charged impurities plays a very important role in the electronic phenomenon of graphene. It is unclear if there is a single dominant informant of unintentional doping even for about analyze type of samples: exfoliated graphene on SiO$_2$. In addition to adsorbates from the ambient atmosphere, doping could besides result from charge defects in SiO$_2 $ [ @Adam2007sct; @Wehling2007mdo; @Schedin2007doi; @Zhou2008mti; @Coletti2010cna ] lithographic residues
 a foefficient that depends on the Coulomb interartion sfrength $\xlpha$, which in turn depends ln the eielectric environment of graphvne. Quantutatmve aspects of tisse calgblatikks wexe disputed by @Llschner2013pos fho included varger corrections neglected in the $GW$ screme. Cokpwred to @Polini2008kat, fpw ths same $\alpha$ @Lischner2013pos find a brkader pnasmaron peak at a smaller separation fgom hhe primary band, wjich appearw to ve in a bettdr agreement with the gxperiments of @Bostwick2010oop.

No eviaence of the plqsnarlt band has ueen rvported in samples whare decpupling of graihene frim the buffer later wes achieved by eithet gold or xlborine intercalation [@Qaoter2011hkd; @Stdrodjv2011ipu]. Tgix gas befn ettributed fo a strongwr dielectric screemigt by the buffsr layqr. An alternative interpretation of the akpareht nonlinearity of the Eirac spectrum of grakhene on SyC invokes a substrate-induced band gap [@Zhou2007sib; @Zhmu2008kaa; @Xhob2008iot; @Bdbfwtto2008sso; @Kim2008ooa], see Sec. \[sec:substrate\] below.

![\[fig:3.6.2\] (Cjmot pnline) The ARPCS dispersion of dppfd ($G = 8 \times 10^{10}\,\texj{cm}^{-2}$) gra'gehe perpendicular (a) and patallel (b) to the $\Gamka$-$\mathrm{K}$ direction [@Bostwicj2010oop]. The dasked black lines are gbides to the eye for yhe dispersion of the hule znd plasmarln bands; ffe solid red lind gpev through the Dirac point. Ehe inset shocs a schdmatoc of ehe renormwlized spectrum in the pgesenee of plasmarond.](Basov_Fig11){width="3.1in"}

Induced effects {#sec:Induced}
===============

Inhpmmgeteities cnd dixorder {#sec:Inhjmogeneities}
----------------------------

Injentional and jnintentiohal dopmng by chargqd impurities klays a very mmportant rolw in the eldztronic phenomrna of grckhene. It iw unclear if there is z single dominauu siurce of unintemtiunaj fo'ing qeen for most stuaiea type of samkjew: exfpliated graphene on ViO$_2$. Jn addition to adsprnates fron the amfient atmosphrre, doping could apso rxsult hrom cnarded defects in SiO$_2$ [@Adam2007sct; @Wehming2007mdo; @Sfheqin2007doi; @Zhou2008mei; @Ciletti2010cna] lichographic residues
a coefficient that depends on the Coulomb $\alpha$, in turn on the dielectric of calculations were disputed @Lischner2013pos who included corrections neglected in the $GW$ scheme. to @Polini2008pat, for the same $\alpha$ @Lischner2013pos find a broader plasmaron peak at smaller separation from the primary band, which appears to be in a better with experiments @Bostwick2010oop. evidence of the plasmaron band has been reported in samples where decoupling of graphene from the later was achieved by either gold or fluorine [@Walter2011hpd; @Starodub2011ipo]. This has attributed to a stronger dielectric by buffer layer. alternative of apparent nonlinearity of Dirac spectrum of graphene on SiC invokes a substrate-induced band gap [@Zhou2007sib; @Zhou2008kaa; @Zhou2008oot; @Benfatto2008sso; @Kim2008ooa], see \[sec:substrate\] below. online) The dispersion doped = 8 \times perpendicular (a) and parallel (b) to [@Bostwick2010oop]. The dashed black lines are guides to eye for dispersion of the hole and plasmaron the solid red line goes through the Dirac The inset shows a schematic of the renormalized spectrum in the presence of plasmarons.](Basov_Fig11){width="3.1in"} Induced =============== Inhomogeneities and disorder ---------------------------- Intentional and doping charged plays very important in the electronic phenomena of graphene. It is unclear if there a single dominant source of unintentional doping even for most of exfoliated graphene on In addition to adsorbates the atmosphere, doping could also charged in @Schedin2007doi; @Coletti2010cna] residues
 a coefficient that depends on The Coulomb InterActIon StRengTh $\alPha$, which in turn DEpenDs on the dielectric envirOnmenT oF GrapHEnE. QuanTitativE AsPECts Of ThEse CaLCuLatioNs wEre dispUted by @LiscHneR2013pOs who includeD VeRtex correcTioNs neglected iN thE $GW$ schEmE. CoMPared To @POlini2008Pat, for THe same $\Alpha$ @LiscHnER2013pos fiND a broadER PlAsmaRon peak at a smaller SEpARation from the pRimary BaND, wHICh aPpeArs to be in a BeTter aGReement WItH THE exPEriments of @BosTwick2010oop.

No eVIdeNce of tHe PlaSMaron bAnd haS bEEn rEported in saMpleS where decOuplinG Of graphENe from tHe buffEr lAteR was AChIeVed By EIthER gOld OR flUorine inTeRcAlatiOn [@WaLTER2011Hpd; @STarOdub2011Ipo]. ThIs has been attrIbuTed tO A stRongeR dielEctrIc ScreeNing by The buFfEr layer. An alternAtivE interpreTatIoN of ThE appaREnt nonLinEarIty of thE Dirac sPEctRuM OF GrAphene on SiC invokes A sUBStRate-induCed banD GaP [@ZHOu2007sib; @ZhoU2008kAa; @ZHou2008oOT; @benfaTto2008sSO; @KIm2008ooa], see sec. \[sec:SUbStRate\] belOw.

![\[Fig:3.6.2\] (ColOr OnlIne) the ARpeS diSpersiOn of dopeD ($N = 8 \timES 10^{10}\,\text{cm}^{-2}$) graphenE Perpendicular (A) AnD PArALlel (B) to The $\Gamma$-$\matHrm{K}$ DIrecTion [@bOsTwiCK2010oop]. THe dasHeD BlACk lines are guides to tHe Eye for The diSpersion of the Hole and plaSMARon bands; The sOLiD Red line goes thrOugh tHe Dirac poiNT. The inseT showS a schemaTic of the rENOrmalizeD spEctRum In tHE PrEsence of plasmAROns.](BAsOv_Fig11){wiDth="3.1In"}

InducEd eFfeCts {#Sec:inDuced}
===============

InhoMogeneitIeS aNd DiSorDer {#seC:inhomogeNeItiEs}
----------------------------

intEntioNAl and uNinteNtioNaL dOPinG by charGEd IMPuriTiEs PlayS a vErY impoRtanT RolE in the eLectronic PheNOmenA oF gRaphene. it is unclear if ThEre is a singLe DomInant sOURce of uniNtentional doping even for MOst studIed Type oF samPles: exfolIatEd grapHenE On SiO$_2$. IN additIon to AdSorBATes frOM ThE amBiEnt atmosphERE, doPing cOuLd alSo resulT from charged defectS In SIO$_2$ [@Adam2007sct; @WehlIng2007Mdo; @SCHEdIn2007dOI; @ZHOu2008mTi; @cOleTTI2010cna] lithographiC residues
 a coefficient that depend s on the C oulom b i nte ra ctio n st rength $\alpha $ , wh ich in turn depends on  thedi e lect r ic  envi ronment of g rap he ne . Q ua n ti tativ e a spectsof these c alc ul ations wered is puted by @ Lis chner2013pos  wh o incl ud edv ertex  co rrect ions n e glecte d in the$G W $ sche m e. Comp a r ed  to@Polini2008pat, f o rt he same $\alph a$ @Li sc h ne r 2 013 pos  find a br oa der p l asmaron pe a k ata  smaller sepa ration from the  prima ry  ba n d, whi ch ap pe a rsto be in abett er agreem ent wi t h the e x perimen ts of@Bo stw ick2 0 10 oo p.
N o  ev i de nce ofthe plas ma ro n ban d ha s b e en r epo rted  in s amples wheredec oupl i ngof gr aphen e fr om  thebuffer  late rwas achieved by  eit her goldorfl uor in e int e rcalat ion  [@ Walter2 011hpd; @St ar o d u b2 011ipo]. This hasbe e n  a ttribute d to a st ro n ger diel ec tri c sc r e ening  byt he  bufferlayer. An  a lternat iv e inte rp ret ati on of theappare nt nonli neari t y of the Dirac spectrum of g r ap h e ne on S iCinvokes a s ubst r ate- indu c ed  ba n d gap  [@Zh ou 2 00 7 sib; @Zhou2008kaa;@Z hou200 8oot;  @Benfatto200 8sso; @Kim 2 0 0 8ooa], s ee S e c. \[sec:substrat e\] b elow.

![\ [ fig:3.6. 2\] ( Color on line) The A RPES dis per sio n o f d o p ed  ($N = 8 \tim e s  10^ {1 0}\,\te xt{ cm}^{-2 }$)  gr aph ene  p erpendicu lar (a)an dpa ra lle l (b) to the $ \G amm a$ -$\ mathr m {K}$ d irect ion[@ Bo s twi ck2010o o p] . Theda sh ed b lac klines  are gui des tothe eye f ort he d is pe rsion o f the hole an dplasmaronba nds ; thes o lid redline goes through the D i rac poi nt.  Theinse t shows a  sc hemati c o f  the r enorma lized  s pec t r um in t he  pr es ence of pl a s mar ons.] (B asov _Fig11) {width="3.1in"}

I n duc ed effects {# sec :Ind u c ed }
= = == = === == = === = 
Inhomogeneitie s and diso rd e r{#sec:Inho m oge ne ities}------- ----- - ------- --------
Intentio na l an d uni ntentional  dopingby charge d  impu r it ies p lay s a ve ry  im porta nt rol e  in  theelectr on ic phe nomen aof graph ene. It is unclear if t here i s a s ing le domina nts our ce of uni nten tional dop ing  ev en fo r m o st st udie d  t ype of sa mple s : exfolia t ed  gr a p he ne on SiO$_ 2 $ .  In  addi tio n  to ad sorb ates from the amb i ent atmosphere , do p i ngcou l d al so  result from c har ge d defectsin  SiO$_2$ [@ Adam2007 sc t ; @We hling2 007mdo ; @Sche d i n2 0 07doi;  @Zh ou2 008mti; @ Col et t i2010cn a]  l i thogra phic  r esidue s
 a_coefficient that_depends on the Coulomb_interaction strength_$\alpha$,_which in_turn_depends on the_dielectric environment of_graphene. Quantitative aspects of_these calculations were_disputed_by @Lischner2013pos who included vertex corrections neglected in the $GW$ scheme. Compared to @Polini2008pat,_for_the same_$\alpha$_@Lischner2013pos_find a broader plasmaron peak_at a smaller separation from_the primary_band, which appears to be in a better_agreement_with the experiments_of @Bostwick2010oop.

No evidence of the plasmaron band has been_reported in samples where decoupling of_graphene from the_buffer_later_was achieved by either_gold or fluorine intercalation [@Walter2011hpd; @Starodub2011ipo]._This has been attributed to a_stronger dielectric screening by the buffer layer._An alternative interpretation of the apparent_nonlinearity of the Dirac spectrum_of graphene_on SiC invokes a substrate-induced_band gap [@Zhou2007sib;_@Zhou2008kaa; @Zhou2008oot;_@Benfatto2008sso; @Kim2008ooa], see_Sec. \[sec:substrate\] below.

![\[fig:3.6.2\] (Color online) The ARPES_dispersion of doped_($N = 8 \times 10^{10}\,\text{cm}^{-2}$) graphene_perpendicular_(a) and parallel_(b)_to_the $\Gamma$-$\mathrm{K}$_direction [@Bostwick2010oop]. The_dashed_black lines_are_guides to the eye for the_dispersion_of the hole and plasmaron bands; the_solid red line goes_through_the Dirac point. The_inset shows a schematic of_the renormalized spectrum in the presence_of plasmarons.](Basov_Fig11){width="3.1in"}

Induced_effects {#sec:Induced}
===============

Inhomogeneities_and disorder {#sec:Inhomogeneities}
----------------------------

Intentional and unintentional doping by charged impurities plays a_very important role in the electronic_phenomena of graphene. It_is unclear_if_there is a_single_dominant source_of unintentional doping even for most studied_type of_samples: exfoliated graphene on SiO$_2$. In_addition to adsorbates from_the_ambient atmosphere, doping could also result_from charged defects in SiO$_2$ [@Adam2007sct;_@Wehling2007mdo; @Schedin2007doi; @Zhou2008mti; @Coletti2010cna] lithographic_residues