 coupling can be neglected. The exponential decay with length for tunneling across a finite molecular wire in contact with two metal electrodes has been analyzed in detail in recent literature using either simple tight-binding theory [@Joachim] or complex band structures calculated from first-principles theory. [@Sankey] But the essential physics can be captured from the simple WKB picture of tunneling through potential barriers with constant barrier height. A separation of the contact and molecule core effect on the tunneling resistance can thus be achieved using the functional relation $R=R_{0}e^{dL}$, where $R_{0}$ is the contact resistance and $d$ is the inverse decay length for tunneling across the SWNT molecule. We find that the Au-SWNT-Au junction has the contact resistance $R_{0}=0.115, 1.88, 2.59 (M\Omega)$ and inverse decay length of $d=1.68,1.68,1.68(1/nm)$ for the Au-SWNT distance of $\Delta L=2.0,2.5,3.0 (\AA)$ respectively. The Ti-SWNT-Ti junction has the contact resistance $R_{0}=0.023, 3.14, 4.95 (M\Omega)$ and inverse decay length of $d=1.51,1.52,1.53(1/nm)$ for the Ti-SWNT distance of $\Delta L=2.0,2.5,3.0 (\AA)$ respectively. Note that the contact resistance increases rapidly with the increasing metal-SWNT distance due to the reduced interface coupling, but the inverse decay length (which is a bulk-related parameter) remains approximately constant. [@Sankey] The total conductance of the metal-SWNT-metal junction at room temperature saturates with increasing SWNT length. This is due to the fact that the potential shift extends over a range comparable to the half of the SWNT length until the SWNT reaches the bulk limit. For longer SWNT, the tunneling is exponentially suppressed while the transport becomes dominated by thermal activation over the potential barrier whose height is approximately constant for all the SWNTs investigated.

The length and temperature dependence of the metal-finite SWNT-metal junction can also be seen more clearly from Fig. \[xueFig15\], where we show the conductance of the SWNT junction as a function of temperature for lengths of $2.0$, $8.4$ and
coupling can be neglected. The exponential decay with length for tunneling across a finite molecular wire in liaison with two metallic element electrodes has been analyzed in contingent in recent literature use either simple close - constipate theory   [ @Joachim ] or complex band structures calculated from beginning - principles theory.   [ @Sankey ] But the substantive purgative can be captured from the simple WKB movie of tunneling through potential barriers with changeless barrier height. A separation of the contact and atom core effect on the tunneling electric resistance can thus be achieve using the running relation $ R = R_{0}e^{dL}$, where $ R_{0}$ is the contact resistance and $ d$ is the inverse decay distance for tunneling across the SWNT molecule. We find that the Au - SWNT - Au junction has the contact underground $ R_{0}=0.115, 1.88, 2.59 (M\Omega)$ and inverse decay length of $ d=1.68,1.68,1.68(1 / nm)$ for the Au - SWNT distance of $ \Delta L=2.0,2.5,3.0 (\AA)$ respectively. The Ti - SWNT - Ti junction has the contact resistance $ R_{0}=0.023, 3.14, 4.95 (M\Omega)$ and inverse decay length of $ d=1.51,1.52,1.53(1 / nm)$ for the Ti - SWNT distance of $ \Delta L=2.0,2.5,3.0 (\AA)$ respectively. Note that the contact resistance increases quickly with the increase metal - SWNT distance due to the reduce interface yoke, but the inverse decay length (which is a bulk - related parameter) remains approximately constant.   [ @Sankey ] The total conductance of the metal - SWNT - metallic element junction at room temperature saturates with increasing SWNT length. This is due to the fact that the potential shift strain over a range comparable to the half of the SWNT length until the SWNT reaches the bulk terminus ad quem. For longer SWNT, the tunneling is exponentially suppress while the conveyance becomes dominated by thermal activation over the potential barrier whose height is approximately constant for all the SWNTs investigated. 

 The length and temperature addiction of the metal - finite SWNT - alloy junction can also be see more distinctly from Fig. \[xueFig15\ ], where we show the conductance of the SWNT junction as a affair of temperature for lengths of $ 2.0 $, $ 8.4 $ and
 cokpling can be neglected. Uhe exponential dgcqy witi lengtg for tuvneling across a finite molerulae wirt in contact with tdo metal vlectrodew haw been analbaed in detail ln reeeit literature uxing eithes simple tight-tivdnng theory [@Joachim] or complex band stwucturex falculated froi figse-prihbikles theory. [@Sankey] But the essentizl physpcs can be capturrd from the simple WKB pichure of tunneling throkgh potentiql bweriers with zonstant barrier heighj. A separation of the contact ana molzcule core gydech on the tunieling resistance gsn thuv be acnieved using tme fuictiinal relation $R=R_{0}e^{dL}$, wiere $R_{0}$ is the contacj resistanwe and $d$ is the invwrwe deway nenggy fur uunieljng acgosa the SWNT molecule. Ww find that the Au-SENE-Qu junction hzs the cjntact resistance $R_{0}=0.115, 1.88, 2.59 (M\Omega)$ and inverst deczy length of $d=1.68,1.68,1.68(1/nm)$ for thw Au-SWNT distance of $\Felta L=2.0,2.5,3.0 (\AW)$ respectively. The Ti-SWNT-Ti junction has the contdct rxskstckge $R_{0}=0.023, 3.14, 4.95 (L\Omega)$ and inverse decay length of $d=1.51,1.52,1.53(1/nm)$ for thq To-SENT distance on $\Delta L=2.0,2.5,3.0 (\AA)$ respevtlvrjy. Note that jhe conczcf resistance increwses rakidly qith the yncrrasing metal-SWNT distance dye to the rebucwd interface couplnng, but the nnversg decau length (which is a buly-relzted parameher) remaihr approximately zonxtdnt. [@Sankey] The total conduceance of vhe mztal-SWNT-oetak junceion at rolm temperature saturates with itcreasing DWNT length. This is due to the hect that the kotantpal shift extekds over a rangq comparable tp the hclf of the SWNT mength nntil the SWGT reaches tha bulk limit. Hor longew SWBT, tye tunnduing is exponemtially slpkressed whule the transport necomgs dominated by tktrmql activation ofer thq iotxntiaj barrier whove hdigfy is xpproximateoh comstant for all the SFNTs investigated.

The lrnnth and tgmperaturq dependence pf the metal-finite SWNT-ketel junvtijn can also be seen more clearmy from Flg. \[wueFig15\], where re smow jhe conductcnce of the SWNT junction as a function if temperature fot lengths of $2.0$, $8.4$ and
coupling can be neglected. The exponential decay for across a molecular wire in has analyzed in detail recent literature using simple tight-binding theory [@Joachim] or complex structures calculated from first-principles theory. [@Sankey] But the essential physics can be captured the simple WKB picture of tunneling through potential barriers with constant barrier height. separation the and core effect on the tunneling resistance can thus be achieved using the functional relation $R=R_{0}e^{dL}$, where is the contact resistance and $d$ is the decay length for tunneling the SWNT molecule. We find the junction has contact $R_{0}=0.115, 2.59 (M\Omega)$ and decay length of $d=1.68,1.68,1.68(1/nm)$ for the Au-SWNT distance of $\Delta L=2.0,2.5,3.0 (\AA)$ respectively. The Ti-SWNT-Ti junction has contact resistance 4.95 (M\Omega)$ inverse length $d=1.51,1.52,1.53(1/nm)$ for the of $\Delta L=2.0,2.5,3.0 (\AA)$ respectively. Note resistance increases rapidly with the increasing metal-SWNT distance to the interface coupling, but the inverse decay (which is a bulk-related parameter) remains approximately constant. The total conductance of the metal-SWNT-metal junction at room temperature saturates with increasing SWNT length. due to the fact the potential shift over range to half of SWNT length until the SWNT reaches the bulk limit. For longer the tunneling is exponentially suppressed while the transport becomes dominated activation the potential barrier height is approximately constant all SWNTs investigated. The length dependence the can be more clearly from Fig. where we show the conductance the SWNT junction as lengths of $2.0$, $8.4$ and
 coupling can be neglected. The ExponentiaL decaY wiTh lEnGth fOr tuNneling across a FInitE molecular wire in contacT with TwO MetaL ElEctroDes has bEEn ANAlyZeD iN deTaIL iN receNt lIteratuRe using eitHer SiMple tight-binDInG theory [@JoaChiM] or complex baNd sTructuReS caLCulatEd fRom fiRst-priNCiples Theory. [@SanKeY] but the ESsentiaL PHySics Can be captured from THe SImple WKB picturE of tunNeLInG THroUgh Potential bArRiers WIth consTAnT BARriER height. A separAtion of the cONtaCt and mOlEcuLE core eFfect On THe tUnneling resIstaNce can thuS be achIEved usiNG the funCtionaL reLatIon $R=r_{0}E^{dl}$, wHerE $R_{0}$ IS thE CoNtaCT reSistance AnD $d$ Is the InveRSE DEcay LenGth fOr tunNeling across tHe SwNT mOLecUle. We Find tHat tHe au-SWNt-Au junCtion HaS the contact resiStanCe $R_{0}=0.115, 1.88, 2.59 (M\Omega)$ And InVerSe Decay LEngth oF $d=1.68,1.68,1.68(1/nM)$ foR the Au-SwNT distANce Of $\dELTa l=2.0,2.5,3.0 (\AA)$ respectively. The ti-swnT-ti junctiOn has tHE cOnTAct resisTaNce $r_{0}=0.023, 3.14, 4.95 (M\OmEGA)$ and iNverSE dEcay lengTh of $d=1.51,1.52,1.53(1/nM)$ FoR tHe Ti-SWNt dIstancE oF $\DeLta l=2.0,2.5,3.0 (\AA)$ reSPectIvely. NOte that tHe conTAct resistance iNCreases rapidlY WiTH ThE IncrEasIng metal-SWNt disTAnce Due tO ThE reDUced iNterfAcE CoUPling, but the inverse dEcAy lengTh (whiCh is a bulk-relaTed parametER) REmains apProxIMaTEly constant. [@SanKey] ThE total condUCtance of The meTal-SWNT-mEtal junctION at room tEmpEraTurE saTURaTes with increaSINg SWnT Length. THis Is due to The FacT thAt tHe Potential Shift extEnDs OvEr A raNge coMParable tO tHe hAlF of The SWnt lengtH untiL the sWnT REacHes the bULk LIMit. FOr LoNger sWNt, tHe tunNeliNG is ExponenTially supPreSSed wHiLe The tranSport becomes dOmInated by thErMal ActivaTIOn over thE potential barrier whose hEIght is aPprOximaTely Constant fOr aLl the SwNTS InvestIgated.

the leNgTh aND TempeRATuRe dEpEndence of tHE MetAl-finItE SWNt-metal jUnction can also be seEN moRe clearly from fig. \[XueFIG15\], WhEre WE sHOw tHe COndUCTance of the SWNT jUnction as a FuNCtIon of tempeRAtuRe For lengThs of $2.0$, $8.4$ anD
 coupling can be neglected . The expo nenti aldec ay  wit h le ngth for tunne l ingacross a finite molecu lar w ir e  inc on tactwith tw o  m e t alel ec tro de s  h as be enanalyze d in detai l i nrecent liter a tu re using e ith er simple ti ght -bindi ng  th e ory [ @Jo achim ] or c o mplexband stru ct u res ca l culated f ro m fi rst-principles th e or y . [@Sankey] Bu t thees s en t i alphy sics can b ecaptu r ed from th e s imp l e WKB picture  of tunneli n g t hrough  p ote n tial b arrie rs wit h constantbarr ier heigh t. A s e paratio n  of the  conta ctand  mol e cu le  co re eff e ct  on the  tunneli ng  r esist ance c a n  thu s b e ac hieve d using the f unc tion a l r elati on $R =R_{ 0} e^{dL }$, wh ere $ R_ {0}$ is the con tact  resistan cean d $ d$  is t h e inve rse  de cay len gth for tun ne l i n gacross the SWNT mo le c u le . We fin d that th eA u-SWNT-A ujun ctio n has t he c o nt act resi stance $R _{ 0}=0.11 5,  1.88,  2 .59  (M \Omeg a )$ a nd inv erse dec ay le n gth of $d=1.68 , 1.68,1.68(1/n m )$ f or theAu- SWNT distan ce o f  $\D elta L= 2.0 , 2.5,3 .0 (\ AA ) $r espectively. The Ti -S WNT-Ti  junc tion has thecontact re s i s tance $R _{0} = 0. 0 23, 3.14, 4.95  (M\O mega)$ and inversedecay  lengthof $d=1.5 1 , 1.52,1.5 3(1 /nm )$for t he  Ti-SWNT dist a n ce o f$\Delta  L= 2.0,2.5 ,3. 0 ( \AA )$re spectivel y. Noteth at  t he  co ntact resistan ce  in cr eas es ra p idly w ith t he i nc re a sin g metal - SW N T  dis ta nc e du e t othe r educ e d i nterfac e couplin g,b ut t he  i nversedecay length(w hich is abu lk- relate d paramete r) remains approximatel y  consta nt.  [@Sa nkey ] The tot alconduc tan c e of t he met al-SW NT -me t a l jun c t io n a troom tempe r a tur e sat ur ates  with i ncreasing SWNT len g th.  This is duetothef a ct  th a tt hepo t ent i a l shift extends  over a ra ng e  c omparablet o t he  half o f the S WNT l e ngth un til the S WNT reach es  the b ulk  limit. Fo r longer  SWNT, th e  tunn e li ng is  ex ponent ia lly  supp ressed whi le th e tran sp ort be comes  d ominated  by thermal activationover t he po ten tial barr ier who se height  isapproximat ely  co nstan t f o r all  the SW NTs inves tiga t ed.

Thel en gth a nd  temperatur e d epe ndenc e o f  the m etal -finite SWNT-meta l  junction canalso b e s een more  c learly from Fi g.\[ x u eFig15\] ,where we sh ow the c on d uctan ce ofthe SW NT junc t i on as a f unct ion  of tempe rat ur e  for le ng th s  of $2 .0$,  $ 8.4$ a nd
 coupling_can be_neglected. The exponential decay_with length_for_tunneling across_a_finite molecular wire_in contact with_two metal electrodes has_been analyzed in_detail_in recent literature using either simple tight-binding theory [@Joachim] or complex band structures calculated from_first-principles_theory. [@Sankey] But_the_essential_physics can be captured from_the simple WKB picture of_tunneling through_potential barriers with constant barrier height. A separation_of_the contact and_molecule core effect on the tunneling resistance can thus_be achieved using the functional relation_$R=R_{0}e^{dL}$, where $R_{0}$_is_the_contact resistance and $d$_is the inverse decay length for_tunneling across the SWNT molecule. We_find that the Au-SWNT-Au junction has the_contact resistance $R_{0}=0.115, 1.88, 2.59 (M\Omega)$_and inverse decay length of_$d=1.68,1.68,1.68(1/nm)$ for_the Au-SWNT distance of $\Delta_L=2.0,2.5,3.0 (\AA)$ respectively._The Ti-SWNT-Ti_junction has the_contact resistance $R_{0}=0.023, 3.14, 4.95 (M\Omega)$_and inverse decay_length of $d=1.51,1.52,1.53(1/nm)$ for the Ti-SWNT_distance_of $\Delta L=2.0,2.5,3.0_(\AA)$_respectively._Note that_the contact resistance_increases_rapidly with_the_increasing metal-SWNT distance due to the_reduced_interface coupling, but the inverse decay length_(which is a bulk-related_parameter)_remains approximately constant. [@Sankey] The_total conductance of the metal-SWNT-metal_junction at room temperature saturates with_increasing SWNT_length. This_is due to the fact that the potential shift extends over_a range comparable to the half_of the SWNT length_until the_SWNT_reaches the bulk_limit._For longer_SWNT, the tunneling is exponentially suppressed while_the transport_becomes dominated by thermal activation over_the potential barrier whose_height_is approximately constant for all the_SWNTs investigated.

The length and temperature dependence_of the metal-finite SWNT-metal junction_can_also_be seen more clearly from_Fig. \[xueFig15\], where we show the_conductance of the_SWNT junction as a function of temperature_for_lengths of $2.0$, $8.4$ and