 the associated band energies for each atom. The primitive unit cell of bulk Bi$_2$Se$_3$ contains three Se and two Bi atoms and using the above algorithm, we obtain [*s*]{} and three [*p*]{} orbitals contribution for each of the atom type at each [*k-point*]{} and band energy. We take the ratio of Se and Bi $p_z$ orbitals contributions compared to the total orbital contributions resulting from all the orbitals of five atoms at a particular [**k**]{}-point and the band energy. If this ratio is 40$\%$ (60$\%$) or greater for Bi (Se), we take the $p_z$ orbital contribution to that band from Bi or Se at that [**k**]{}-point with the associated band energy; otherwise, we neglect it. The choice of the percentage cut-off is guided by the number of each type of atoms in the unit cell: two for Bi versus three for Se. We find that changing the cut-off or critical percentage ratio makes the contributions to each band at each [**k**]{}-point different but the overall contribution to the VBM and CBM at the $\Gamma$ point remains the same. In this sense, the choice of critical percentage is arbitrary. We use the above algorithm both without and with SoC calculations, and as a result we could see the band inversion as seen in Fig. 2(b). In the literature, this inversion process is termed as phase transition from a trivial insulator (Bi$_2$Se$_3$ without SoC) to a topological insulator.

\

Thin film band structures and surface state localization
========================================================

The most interesting feature emerges when thin-film structures are considered. A gapless linear spectrum with continuum in the bulk is evident at the TRI point $\Gamma$ (for example Figure 4(e) for a thin film consisting of 6QLs). These states are contributed by both the surfaces of the thin film and are spin-polarized. The thin film structure is constructed by stacking up the quintuple layers along the [*z*]{}-direction with a vacuum region that forms the supercell in the DFT calculation (Fig. 3(a)). We consider several thicknesses of the thin film structure: 2QLs, 3QLs, 4QLs, 5QLs and 6QLs to study the robustness of the linear energy dispersion and for each thickness we used a vacuum size of about 3 nm. We did not relax the atomic positions. The relaxations and their effect
the associated band energies for each atom. The primitive unit cellular telephone of bulk Bi$_2$Se$_3 $ control three Se and two Bi atoms and using the above algorithm, we receive [ * s * ] { } and three [ * p * ] { } orbitals contribution for each of the atom character at each [ * k - point * ] { } and band department of energy. We assume the ratio of Se and Bi $ p_z$ orbitals contribution compared to the total orbital contribution resulting from all the orbitals of five atoms at a finical [ * * k**]{}-point and the isthmus energy. If this ratio is 40$\%$ (60$\%$) or greater for Bi (Se), we take the $ p_z$ orbital contribution to that band from Bi or Se at that [ * * k**]{}-point with the associated set energy; otherwise, we neglect it. The option of the percentage cut - off is guide by the number of each character of atoms in the whole cell: two for Bi versus three for Se. We find that changing the snub - off or critical percentage ratio makes the contributions to each band at each [ * * k**]{}-point different but the overall contribution to the VBM and CBM at the $ \Gamma$ point remains the same. In this sense, the choice of critical percentage is arbitrary. We use the above algorithm both without and with SoC calculations, and as a result we could see the band anastrophe as determine in Fig. 2(b). In the literature, this inversion summons is term as phase conversion from a trivial insulator (Bi$_2$Se$_3 $ without SoC) to a topological insulator. 

 \ 

 Thin movie band structure and surface state localization of function 
 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = 

 The most interesting feature emerges when thin - film structures are consider. A gapless linear spectrum with continuum in the bulk is evident at the TRI point $ \Gamma$ (for example Figure 4(e) for a thin movie consist of 6QLs). These states are contributed by both the surfaces of the thin movie and are spin - polarized. The thin film structure is constructed by stacking up the quintuple layers along the [ * z*]{}-direction with a vacuum area that forms the supercell in the DFT calculation (Fig. 3(a) ). We consider several thicknesses of the thin movie structure: 2QLs, 3QLs, 4QLs, 5QLs and 6QLs to study the robustness of the linear energy distribution and for each thickness we used a vacuum size of approximately 3 nm. We did not relax the atomic positions. The relaxations and their impression
 thf associated band energits for each atom. Jhw primmtive uhit cell of bulk Bi$_2$Se$_3$ contains three Sw and two Bi atoms and usine the abone algorirhm, xe obtain [*s*]{} and vgree [*p*]{} orbitamd coutcibution for eagh of the adom type at eawh [*k-'oint*]{} and band energy. We take the raeio of Xe and Bi $p_z$ orbytalx confginutions compared to the total orgital cmntributions tesulting from all the orbltald of five atoms at a particulqr [**k**]{}-[iint and the band energy. If this rztio is 40$\%$ (60$\%$) or greater for Bi (Se), de tale the $p_z$ irvitwn contributmon to that band fvpm Bi mr Se ay that [**k**]{}-point eiti thw associated band enecgy; otherwise, we negject it. Tve choice of the peecwntagg cut-mff kw gjidtd uy fhe nulbec of each tgpe of atomw in the unit cell: uwo dor Bi versus three fjr Se. We find that changing the cut-off mr dritical percentage ratuo makes the contribujions to ewch band at each [**k**]{}-point different but the overall contcicutnin to rhf VBM and CBM at the $\Gamma$ point remains the fzmt. Ik this sense, the choice of vrltosal percentagg is aryjtdary. We use the ablve algjrithn both wiuhout and with SoC calculations, qnd as a resllt qe could see the bcnd inversiou as sgen in Fig. 2(b). In the literaturz, this inversion orocess ia termed as phase trsnvition from a trivial insujator (Bi$_2$Sx$_3$ witkout SoC) to s topojogical indulator.

\

Thin film band stguctutes ang surface dtate localization
========================================================

The most intecxsting featurg ekerces when thin-nilm structures are considereb. A gaplzss livear spectgum with rontinuum in the bulk is agident at thx TRI poigt $\Gqmma$ (for exxople Figure 4(e) gor a thiu filn consisting of 6QLx). Tfsse states are eubtributed by boyh ghe slrfeces jx the thin fhlm xnd sre soin-polarizeb. Ghe yhin film structure hs cknstructed by staclikg up the quintupje layers alomg the [*z*]{}-direction aith e vacunm regoon that forms the supercell in tge DFT capcujation (Fig. 3(a)). We gonsyder severcl thicknesses of the thin film structurx: 2QLs, 3QLs, 4QLs, 5QLs and 6QOs to study the robostkess of the kineaw energy gispersion and for eqch thickness we msed a vacuum size of zbout 3 nm. Wf did not relax the atomic positions. The relaxations and their effect
the associated band energies for each atom. unit of bulk contains three Se using above algorithm, we [*s*]{} and three orbitals contribution for each of the type at each [*k-point*]{} and band energy. We take the ratio of Se Bi $p_z$ orbitals contributions compared to the total orbital contributions resulting from all orbitals five at particular [**k**]{}-point and the band energy. If this ratio is 40$\%$ (60$\%$) or greater for Bi we take the $p_z$ orbital contribution to that from Bi or Se that [**k**]{}-point with the associated energy; we neglect The of percentage cut-off is by the number of each type of atoms in the unit cell: two for Bi versus three Se. We changing the or percentage makes the contributions band at each [**k**]{}-point different but to the VBM and CBM at the $\Gamma$ remains the In this sense, the choice of percentage is arbitrary. We use the above algorithm without and with SoC calculations, and as a result we could see the band inversion in Fig. 2(b). In literature, this inversion is as transition a trivial (Bi$_2$Se$_3$ without SoC) to a topological insulator. \ Thin film band and surface state localization ======================================================== The most interesting feature emerges structures considered. A gapless spectrum with continuum in bulk evident at the TRI (for Figure thin consisting 6QLs). These states are by both the surfaces of thin film and are is constructed by stacking up the quintuple layers the [*z*]{}-direction with a vacuum region that the supercell in the DFT calculation (Fig. 3(a)). We consider several thicknesses the thin 2QLs, 3QLs, 4QLs, 5QLs and 6QLs to study robustness of the linear dispersion and for each thickness we used a vacuum of 3 nm. did not relax atomic positions. The and their effect
 the associated band energies For each atoM. The pRimItiVe Unit Cell Of bulk Bi$_2$Se$_3$ contAIns tHree Se and two Bi atoms and Using ThE AbovE AlGoritHm, we obtAIn [*S*]{} ANd tHrEe [*P*]{} orBiTAlS contRibUtion foR each of the AtoM tYpe at each [*k-poINt*]{} And band eneRgy. we take the ratIo oF Se and bi $P_z$ oRBitalS coNtribUtions COmpareD to the totAl ORbital COntribuTIOnS resUlting from all the oRBiTAls of five atoms At a parTiCUlAR [**K**]{}-poInt And the band EnErgy. IF This ratIO iS 40$\%$ (60$\%$) OR GreATer for Bi (Se), we tAke the $p_z$ orbITal ContriBuTioN To that Band fRoM bi oR Se at that [**k**]{}-pOint With the asSociatED band enERgy; otheRwise, wE neGleCt it. tHe ChOicE oF The PErCenTAge Cut-off is GuIdEd by tHe nuMBER Of eaCh tYpe oF atomS in the unit celL: twO for bI veRsus tHree fOr Se. we Find tHat chaNging ThE cut-off or criticAl peRcentage rAtiO mAkeS tHe conTRibutiOns To eAch band At each [**k**]{}-POinT dIFFErEnt but the overall coNtRIBuTion to thE VBM anD cBm aT The $\Gamma$ PoInt RemaINS the sAme. IN ThIs sense, tHe choiCE oF cRitical PeRcentaGe Is aRbiTrary. wE use The aboVe algoriThm boTH without and witH soC calculatioNS, aND As A ResuLt wE could see thE banD InveRsioN As SeeN In Fig. 2(B). In thE lITeRAture, this inversion pRoCess is TermeD as phase transItion from a TRIVial insuLatoR (bi$_2$sE$_3$ without SoC) to a TopolOgical insuLAtor.

\

Thin Film bAnd strucTures and sURFace statE loCalIzaTioN
========================================================

tHe Most interestiNG FeatUrE emergeS whEn thin-fIlm StrUctUreS aRe consideRed. A gaplEsS lInEaR spEctruM With contInUum In The Bulk iS EvidenT at thE TRI PoInT $\gamMa$ (for exAMpLE figuRe 4(E) fOr a tHin FiLm conSistINg oF 6QLs). TheSe states aRe cONtriBuTeD by both The surfaces of ThE thin film aNd Are Spin-poLARized. The Thin film structure is consTRucted bY stAckinG up tHe quintupLe lAyers aLonG The [*z*]{}-diRectioN with A vAcuUM RegioN THaT foRmS the supercELL in The DFt cAlcuLation (FIg. 3(a)). We consider severAL thIcknesses of thE thIn fiLM StRucTUrE: 2qLs, 3qLS, 4qLs, 5qlS and 6QLs to study tHe robustneSs OF tHe linear enERgy DiSpersioN and for Each tHIckness We used a vaCuum size oF aBout 3 NM. we dId not relax The atomiC positionS. the reLAxAtionS anD their EfFecT
 the associated band energ ies for ea ch at om.  Th eprim itiv e unit cell of bulk  Bi$_2$Se$_3$ contains  thre eS e an d  t wo Bi  atomsa nd u sin gth e a bo v ealgor ith m, we o btain [*s* ]{}  a nd three [*p * ]{ } orbitals  co ntribution f oreach o fthe atomtyp e ateach [ * k-poin t*]{} and  b a nd ene r gy. Wet a ke  the  ratio of Se andB i$ p_z$ orbitalscontri bu t io n s  co mpa red to the  t otalo rbitalc on t r i but i ons resulting  from all t h e o rbital soff ive at oms a ta  pa rticular [* *k** ]{}-point  and t h e bande nergy.If thi s r ati o is 40 $\ %$(6 0 $\% $ )org rea ter forBi  ( Se),we t a k e the$p_ z$ o rbita l contributio n t o th a t b and f rom B i or  S e atthat [ **k** ]{ }-point with th e as sociatedban dene rg y; ot h erwise , w e n eglectit. The cho ic e o fthe percentage cut -o f f  i s guided  by th e  n um b er of ea ch  ty pe o f atoms  int he  unit ce ll: tw o  f or  Bi ver su s thre efor  Se . Wef indthat c hangingthe c u t-off or criti c al percentage ra t i om akes  th e contribut ions to e achb an d a t  each  [**k ** ] {} - point different but  t he ove rallcontributionto the VBM a n d CBM at  the $\ G amma$ point re mains  the same. In thissense , the ch oice of c r i tical pe rce nta geisa r bi trary. We use t he a bo ve algo rit hm both  wi tho utand  w ith SoC c alculati on s,  a nd  as  a re s ult we c ou ldse e t he ba n d inve rsion  asse en inFig. 2( b ). I n th eli tera tur e,  this  inv e rsi on proc ess is te rme d  asph as e trans ition from atr ivial insu la tor  (Bi$_ 2 $ Se$_3$ w ithout SoC) to a topolo g ical in sul ator. 

\
Thin fil m b and st ruc t ures a nd sur facest ate l ocali z a ti on== ========== = = === ===== == ==== ======= ================== = ==
The most int ere stin g fe atu r ee mer ge s  wh e n  thin-film stru ctures are  c o ns idered. Ag apl es s linea r spect rum w i th cont inuum inthe bulkis  evi d e ntat the TRI  point $ \Gamma$ ( f or ex a mp le Fi gur e 4(e)  f ora thi n film con sisti ng of6Q Ls). T hesest ates are  contributed by both th e surf acesofthe thinfil m  an d are spi n-po larized. T hethi n fil m s t ructu re i s  c ons t ructe d by stackingu pthe q ui ntuple laye r s alo ng th e [ * z*]{}- dire ction with a vacu u m region thatform s the  su p erce ll  in the DFT ca lcu la t i on (Fig.  3 (a)). We co nsider s ev e ral t hickne sses o f the t h i nf ilm st ruct ure : 2QLs, 3 QLs ,4 QLs, 5Q Ls  a n d 6QLs  tost udy th e robu s tnes s of the linear en ergyd i spers i onand f or  each t h ickn ess we use d a vacuumsize o f ab out 3  nm. We  d id not  re la x the atom i c positio ns. T he rela xa tion s a nd the ir e f f ect
 the_associated band_energies for each atom._The primitive_unit_cell of_bulk_Bi$_2$Se$_3$ contains three_Se and two_Bi atoms and using_the above algorithm,_we_obtain [*s*]{} and three [*p*]{} orbitals contribution for each of the atom type at_each_[*k-point*]{} and_band_energy._We take the ratio of_Se and Bi $p_z$ orbitals_contributions compared_to the total orbital contributions resulting from all_the_orbitals of five_atoms at a particular [**k**]{}-point and the band energy._If this ratio is 40$\%$ (60$\%$)_or greater for_Bi_(Se),_we take the $p_z$_orbital contribution to that band from_Bi or Se at that [**k**]{}-point_with the associated band energy; otherwise, we_neglect it. The choice of the_percentage cut-off is guided by_the number_of each type of atoms_in the unit_cell: two_for Bi versus_three for Se. We find that_changing the cut-off_or critical percentage ratio makes the_contributions_to each band_at_each_[**k**]{}-point different_but the overall_contribution_to the_VBM_and CBM at the $\Gamma$ point_remains_the same. In this sense, the choice_of critical percentage is_arbitrary._We use the above_algorithm both without and with_SoC calculations, and as a result_we could_see the_band inversion as seen in Fig. 2(b). In the literature, this_inversion process is termed as phase_transition from a trivial_insulator (Bi$_2$Se$_3$_without_SoC) to a_topological_insulator.

\

Thin film_band structures and surface state localization
========================================================

The most_interesting feature_emerges when thin-film structures are considered._A gapless linear spectrum_with_continuum in the bulk is evident_at the TRI point $\Gamma$ (for_example Figure 4(e) for a_thin_film_consisting of 6QLs). These states_are contributed by both the surfaces_of the thin_film and are spin-polarized. The thin film_structure_is constructed by stacking up the_quintuple_layers along the [*z*]{}-direction with a_vacuum_region_that forms the supercell in_the DFT calculation (Fig. 3(a)). We_consider several thicknesses of the thin film structure: 2QLs,_3QLs, 4QLs, 5QLs_and 6QLs to study the_robustness_of_the linear energy dispersion and for each thickness we used_a vacuum_size of about_3 nm. We did not relax the atomic positions. The_relaxations and their effect