LAO) purchased from Crystec  [@crystec]. A laser repetition rate of 2.11 Hz and a laser energy density of 2.0 J/cm$^2$ were used. The substrate temperature was 650$^\circ$C and the background pressure was around 8.6$\times$10$^{-6}$ Torr. Films were deposited in oxygen environment at 30 mTorr and after the deposition, the sample was cooled to room temperature within an oxygen environment around 300 Torr to reduce/eliminate oxygen vacancies in the films. The thicknesses of the films were measured by X-ray reflectivity (XRR) (Fig. 1(d)) and the film deposition rate was determined to be approximately 0.74 Å/pulse. Samples ranging from 4.1 to 63 nm in thickness were each grown on SrTiO$_3$(001), and films ranging in thickness from 4.3 to 10 nm were grown on LAO(001) and SLAO(001). Grazing incidence X-ray diffraction (GIXRD)  [@Lee2011] (Fig. 1(a)) and reciprocal space mapping (RSM) were used to determine film lattice strain states by measuring the film in-plane lattice constant for thin ($<$20 nm) and thick ($>$20 nm) films respectively. As can be seen in Fig. 1(a), the thinnest film (4.1 nm) shows no substrate peak broadening and no extra peak, indicating the fully strained status of the film. In the 7.1 nm sample curve, the shoulder of the STO peak is evidence that the film starts to relax but is still mainly strained to the substrate. In the 10.4 nm sample curve, no shoulder at the STO peak position and the bump at the CMO(002) position shows a mainly relaxed state. X-ray diffraction (XRD) (Fig. 1(b)) was used to ensure the films were single phase crystals with no secondary phases and to measure out-of-plane lattice parameter. Atomic force microscopy (AFM) (Fig. 1(c)) was used to confirm film surface quality.

Five CMO film samples of different thicknesses ranging from 4.1 nm to 62.9 nm were grown on STO, and two additional films of $\sim$10 nm and $\sim$4 nm were grown, each on LAO and SLAO, to probe and disentangle the effects of thickness
LAO) purchased from Crystec   [ @crystec ]. A laser repetition rate of 2.11 Hz and a laser energy concentration of 2.0 J / cm$^2 $ were use. The substrate temperature was 650$^\circ$C and the background pressure was around 8.6$\times$10$^{-6}$ Torr. film were deposit in oxygen environment at 30 mTorr and after the deposition, the sample was cool to room temperature within an oxygen environment around 300 Torr to reduce / extinguish oxygen vacancies in the films. The thickness of the films were measured by adam - re reflectivity (XRR) (Fig. 1(d) ) and the film deposition rate was determined to be approximately 0.74 Å / pulsation. Samples ranging from 4.1 to 63 nm in thickness were each grow on SrTiO$_3$(001), and films ranging in thickness from 4.3 to 10 nanometer were grown on LAO(001) and SLAO(001). crop incidence X - ray diffraction (GIXRD)   [ @Lee2011 ] (Fig. 1(a) ) and reciprocal space mapping (RSM) were used to settle film lattice strain states by measuring the film in - plane lattice constant for thin ($ < $ 20 nm) and thick ($ > $ 20 nm) films respectively. As can be seen in Fig. 1(a), the thinnest film (4.1 nm) read no substrate peak broadening and no excess acme, indicate the fully strained status of the film. In the 7.1 nm sample curve, the shoulder of the STO bill is evidence that the film starts to relax but is still mainly strain to the substrate. In the 10.4 nm sample curve, no shoulder at the STO peak position and the bump at the CMO(002) position testify a chiefly relaxed state. X - ray diffraction (XRD) (Fig. 1(b) ) was used to ensure the films were single phase crystals with no secondary phase and to measure out - of - plane lattice parameter. nuclear force microscopy (AFM) (Fig. 1(c) ) was used to confirm film surface quality. 

 Five CMO movie samples of different thicknesses ranging from 4.1 nanometer to 62.9 nm were grow on STO, and two additional films of $ \sim$10 nm and $ \sim$4 nm were grown, each on LAO and SLAO, to probe and disentangle the effects of thickness
LAO) purchased from Crystec  [@grystec]. A laser tepetitimn rats of 2.11 Hz and a laser energy density lf 2.0 J/cm$^2$ were used. The substrage temperwture waw 650$^\cicc$C and the backjdound pvzssurs was eround 8.6$\times$10$^{-6}$ Totr. Films wera deposited in obyyen environment at 30 mTorr and after ehe deppsltion, the sampje wsf cokled to room temperature within an oxygen environment sround 300 Torr to reduce/elimlnatf oxygen vacancies in the filns. Trw thicknesser of the fpnms were mgasured by X-ray reflectivity (XRR) (Fig. 1(b)) and the fuln dfkosition ratx was qetermined to be appsoximatrly 0.74 Å/pulse. Samiles cangung from 4.1 to 63 nm in tiickness were each gtown on SrDiK$_3$(001), and films rangibg in tvicktess droo 4.3 uo 10 nj were grkwn on LAO(001) and SLAO(001). Geazing incidence X-rsy eiffraction (GJXRD)  [@Lqe2011] (Fig. 1(a)) and reciprocal space mapping (RSM) wede used to determine fiom lattice strain stajes by meafuring the film in-plane lattice constant for thin ($<$20 nm) ena tklgk ($>$20 vn) vilms respectively. As can be seen in Fig. 1(a), thq tniknest film (4.1 nm) smows no substrate lewk froadening ana no erfrz peak, indicating hhe fuljy steained stwtus of the film. In the 7.1 nm sample curve, thv shiulder of the STO 'eak is evidznce tnat tne film starts to relax but is still mwinly strzkned to the subsgrane. It the 10.4 nm sample curve, no fhoulder et thz STO pexk ppsitiog and the hump at the CMO(002) position showd d mainly rflaxed state. X-ray diffraction (XCV) (Fig. 1(b)) was uxeg tm ensure the nilms were singje phase crystcls with no sdcondary pgases aid to measurq out-of-plane nwttice paramxter. Atomyc firce microszupy (AFM) (Fig. 1(c)) eas used no condirm film surface auaujty.

Five CMO filn sqmples of diffeteng tribknxsses sanging from 4.1 nm to 62.9 nm wdre grown ok SGO, amd two additional finms kf $\sim$10 nm and $\sim$4 mm were griwn, each on LAO and SKAO, to probe and dlsentengle vhe efgecjs of thickness
LAO) purchased from Crystec [@crystec]. A laser of Hz and laser energy density The temperature was 650$^\circ$C the background pressure around 8.6$\times$10$^{-6}$ Torr. Films were deposited oxygen environment at 30 mTorr and after the deposition, the sample was cooled room temperature within an oxygen environment around 300 Torr to reduce/eliminate oxygen vacancies the The of films were measured by X-ray reflectivity (XRR) (Fig. 1(d)) and the film deposition rate was determined be approximately 0.74 Å/pulse. Samples ranging from 4.1 63 nm in thickness each grown on SrTiO$_3$(001), and ranging thickness from to nm grown on LAO(001) SLAO(001). Grazing incidence X-ray diffraction (GIXRD) [@Lee2011] (Fig. 1(a)) and reciprocal space mapping (RSM) were used to film lattice by measuring film lattice for thin ($<$20 thick ($>$20 nm) films respectively. As in Fig. 1(a), the thinnest film (4.1 nm) no substrate broadening and no extra peak, indicating fully strained status of the film. In the nm sample curve, the shoulder of the STO peak is evidence that the film starts but is still mainly to the substrate. the nm curve, shoulder at STO peak position and the bump at the CMO(002) position shows mainly relaxed state. X-ray diffraction (XRD) (Fig. 1(b)) was used the were single phase with no secondary phases to out-of-plane lattice parameter. Atomic (AFM) 1(c)) confirm surface Five CMO film samples different thicknesses ranging from 4.1 to 62.9 nm were additional films of $\sim$10 nm and $\sim$4 nm grown, each on LAO and SLAO, to and disentangle the effects of thickness
LAO) purchased from Crystec  [@crYstec]. A laseR repeTitIon RaTe of 2.11 hz anD a laser energy dENsitY of 2.0 J/cm$^2$ were used. The substRate tEmPEratURe Was 650$^\ciRc$C and tHE bACKgrOuNd PreSsURe Was arOunD 8.6$\times$10$^{-6}$ TOrr. Films weRe dEpOsited in oxygEN eNvironment At 30 mtorr and after The DeposiTiOn, tHE sampLe wAs cooLed to rOOm tempErature wiThIN an oxyGEn envirONMeNt arOund 300 Torr to reduce/eLImINate oxygen vacaNcies iN tHE fILMs. THe tHicknesses Of The fiLMs were mEAsURED by x-Ray reflectiviTy (XRR) (Fig. 1(d)) anD The Film dePoSitIOn rate Was deTeRMinEd to be approXimaTely 0.74 Å/pulsE. SamplES ranginG From 4.1 to 63 nM in thiCknEss Were EAcH gRowN oN srTIo$_3$(001), aNd fILms Ranging iN tHiCknesS froM 4.3 TO 10 NM werE grOwn oN LAO(001) aNd SLAO(001). Grazing IncIdenCE X-rAy difFractIon (GiXrD)  [@Lee2011] (fig. 1(a)) anD reciPrOcal space mappinG (RSM) Were used tO deTeRmiNe Film lATtice sTraIn sTates by MeasuriNG thE fILM In-Plane lattice constaNt FOR tHin ($<$20 nm) and Thick ($>$20 nM) FiLmS RespectiVeLy. AS can BE Seen iN Fig. 1(A), ThE thinnesT film (4.1 nM) ShOwS no subsTrAte peaK bRoaDenIng anD No exTra peaK, indicatIng thE Fully strained sTAtus of the film. iN tHE 7.1 Nm SAmplE cuRve, the shoulDer oF The StO peAK iS evIDence That tHe FIlM Starts to relax but is sTiLl mainLy strAined to the subStrate. In thE 10.4 NM Sample cuRve, nO ShOUlder at the STO pEak poSition and tHE bump at tHe CMO(002) Position Shows a maiNLY relaxed StaTe. X-Ray DifFRAcTion (XRD) (Fig. 1(b)) waS USed tO eNsure thE fiLms were SinGle PhaSe cRyStals with No secondArY pHaSeS anD to meASure out-oF-pLanE lAttIce paRAmeter. atomiC forCe MiCRosCopy (AFM) (fIg. 1(C)) WAs usEd To ConfIrm FiLm surFace QUalIty.

Five cMO film saMplES of dIfFeRent thiCknesses rangiNg From 4.1 nm to 62.9 nm WeRe gRown on sto, and two aDditional films of $\sim$10 nm anD $\Sim$4 nm weRe gRown, eAch oN LAO and SLaO, tO probe And DIsentaNgle thE effeCtS of THIckneSS
LAO) purchased from Cryste c  [@cryst ec].A l ase rrepe titi on rate of 2.1 1  Hzand a laser energy den sityof 2.0J /c m$^2$  were u s ed . The  s ub str at e  t emper atu re was650$^\circ $Can d the backgr o un d pressure  wa s around 8.6 $\t imes$1 0$ ^{- 6 }$ To rr.  Film s were deposi ted in ox yg e n envi r onmenta t  3 0 mT orr and after the de p osition, the s amplewa s  c o o led  to  room temp er ature withina no x y gen environment a round 300 T o rrto red uc e/e l iminat e oxy ge n  va cancies inthefilms. Th e thic k nesseso f the f ilms w ere  me asur e dby  X- ra y  re f le cti v ity  (XRR) ( Fi g.  1(d) ) an d t h e fi lmdepo sitio n rate was de ter mine d  to  be a pprox imat el y 0.7 4 Å/pu lse.Sa mples ranging f rom4.1 to 63  nm  i n t hi cknes s  wereeac h g rown on  SrTiO$ _ 3$( 00 1 ) ,  a nd films ranging i nt h ic kness fr om 4.3 to  1 0  nm were  g row n on L AO(00 1) a n dSLAO(001 ). Gra z in ginciden ce  X-ray  d iff rac tion( GIXR D)  [@ Lee2011]  (Fig .  1(a)) and rec i procal spacem ap p i ng (RSM ) w ere used to  det e rmin e fi l mlat t ice s train  s t at e s by measuring thefi lm in- plane  lattice cons tant for t h i n  ($<$20nm)a nd thick ($>$20 n m) fi lms respec t ively. A s can  be seen  in Fig.1 ( a), thethi nne stfil m (4 .1 nm) showsn o  sub st rate pe akbroaden ing  an d n o e xt ra peak,indicati ng  t he  f ull y str a ined sta tu s o fthe  film .  In th e 7.1  nmsa mp l e c urve, t h es h ould er  o f th e S TO  peak  ise vid ence th at the fi lms tart sto  relaxbut is stillma inly strai ne d t o thes u bstrate.  In the 10.4 nm samplec urve, n o s hould er a t the STO  pe ak pos iti o n andthe bu mp at  t heC M O(002 ) po sit io n shows am a inl y rel ax ed s tate. X -ray diffraction ( X RD)  (Fig. 1(b))was  use d to  en s ur e  th ef ilm s were single pha se crystal sw it h no secon d ary  p hases a nd to m easur e  out-of -plane la ttice par am eter . Ato mic forcemicrosco py (AFM)( Fig.1 (c )) wa s u sed to  c onf irm f ilm su r fac e qua lity.
F ive CM O fil msamplesof different thicknesse s rang ing f rom  4.1 nm t o 6 2 .9nm were g rown  on STO, a ndtwo  addi tio n al fi lmso f$\s i m$10nm a n d $\sim$4 nm  we r e  g rown, eacho n LAO  andSLA O , to p robe  and disentanglet he effects ofthic k n ess 
LAO) purchased_from Crystec_ [@crystec]. A laser repetition_rate of_2.11_Hz and_a_laser energy density_of 2.0 J/cm$^2$_were used. The substrate_temperature was 650$^\circ$C_and_the background pressure was around 8.6$\times$10$^{-6}$ Torr. Films were deposited in oxygen environment at_30_mTorr and_after_the_deposition, the sample was cooled_to room temperature within an_oxygen environment_around 300 Torr to reduce/eliminate oxygen vacancies in_the_films. The thicknesses_of the films were measured by X-ray reflectivity (XRR)_(Fig. 1(d)) and the film deposition_rate was determined_to_be_approximately 0.74 Å/pulse. Samples_ranging from 4.1 to 63 nm_in thickness were each grown on_SrTiO$_3$(001), and films ranging in thickness from_4.3 to 10 nm were grown_on LAO(001) and SLAO(001). Grazing_incidence X-ray_diffraction (GIXRD)  [@Lee2011] (Fig. 1(a))_and reciprocal space_mapping (RSM)_were used to_determine film lattice strain states by_measuring the film_in-plane lattice constant for thin ($<$20_nm)_and thick ($>$20_nm)_films_respectively. As_can be seen_in_Fig. 1(a),_the_thinnest film (4.1 nm) shows no_substrate_peak broadening and no extra peak, indicating_the fully strained status_of_the film. In the_7.1 nm sample curve, the_shoulder of the STO peak is_evidence that_the film_starts to relax but is still mainly strained to the substrate._In the 10.4 nm sample curve,_no shoulder at the_STO peak_position_and the bump_at_the CMO(002)_position shows a mainly relaxed state. X-ray_diffraction (XRD)_(Fig. 1(b)) was used to ensure_the films were single_phase_crystals with no secondary phases and_to measure out-of-plane lattice parameter. Atomic_force microscopy (AFM) (Fig. 1(c))_was_used_to confirm film surface quality.

Five_CMO film samples of different thicknesses_ranging from 4.1_nm to 62.9 nm were grown on_STO,_and two additional films of $\sim$10_nm_and $\sim$4 nm were grown, each_on_LAO_and SLAO, to probe and_disentangle the effects of thickness