Temperature coefficient of resistance (TCR) 

The material used in the detector must demonstrate large changes in resistance as a result of minute changes in temperature. As the material is heated, due to the incoming infrared radiation, the resistance of the material decreases. This is related to the material's temperature coefficient of resistance (TCR) specifically its negative temperature coefficient. Industry currently manufactures microbolometers that contain materials with TCRs near –2 %/K. Although many materials exist that have far higher TCRs, there are several other factors that need to be taken into consideration when producing optimized microbolometers.

1/f noise 

1/f noise, like other noises, causes a disturbance that affects the signal and that may distort the information carried by the signal. Changes in temperature across the absorbing material are determined by changes in the bias current or voltage flowing through the detecting material. If the noise is large then small changes that occur may not be seen clearly and the device is useless. Using a detector material that has a minimum amount of 1/f noise allows for a clearer signal to be maintained between IR detection and the output that is displayed. Detector material must be tested to assure that this noise does not significantly interfere with signal.

Resistance 

Using a material that has low room temperature resistance is also important. Lower resistance across the detecting material mean less power will need to be used. Also, there is a relationship between resistance and noise, the higher the resistance the higher the noise. Thus, for easier detection and to satisfy the low noise requirement, resistance should be low.

Detecting materials 

The two most commonly used IR radiation detecting materials in microbolometers are amorphous silicon and vanadium oxide. Much research has been done to test the feasibility of other materials to be used. Those investigated include: Ti, YBaCuO, GeSiO, poly SiGe, BiLaSrMnO and protein-based cytochrome C and bovine serum albumin.

Amorphous Si (a-Si) works well because it can easily be integrated into the CMOS fabrication process, is highly stable, a fast time constant, and has a long mean time before failure. To create the layered structure and patterning, the CMOS fabrication process can be used but it requires temperatures to stay below 200˚C on average. A problem with some potential materials is that to create the desirable properties their deposition temperatures may be too high although this is not a problem for a-Si thin films. a-Si also possesses
Temperature coefficient of resistance (TCR) 

 The material used in the detector must demonstrate big change in resistance as a resultant role of moment changes in temperature. As the material is heat, due to the incoming infrared radiotherapy, the resistance of the fabric decrease. This is related to the fabric's temperature coefficient of resistance (TCR) specifically its negative temperature coefficient. Industry currently manufacture microbolometers that contain materials with TCRs near – 2% /K. Although many materials exist that have far higher TCRs, there embody several other factors that want to be taken into consideration when producing optimized microbolometers. 

 1 / f noise 

 1 / f noise, like early noises, induce a disturbance that affects the signal and that may distort the data carried by the signal. Changes in temperature across the absorbing material are determined by changes in the bias stream or electric potential hang through the detecting material. If the noise is large then small changes that happen may not be seen intelligibly and the device is useless. Using a detector material that has a minimal sum of 1 / f noise allows for a clearer signal to be maintained between IR detection and the output that is displayed. Detector fabric must be tested to assure that this noise does not significantly interfere with signal. 

 Resistance 

 Using a material that has low room temperature resistance is also important. gloomy electric resistance across the detecting material mean less power will need to be practice. Also, there is a relationship between resistance and noise, the higher the resistance the higher the randomness. Thus, for easier detection and to satisfy the low randomness requirement, resistance should be low. 

 Detecting material 

 The two most normally used IR radiation detecting material in microbolometers are amorphous silicon and vanadium oxide. Much research has been do to test the feasibility of other materials to be used. Those investigated include: Ti, YBaCuO, GeSiO, poly SiGe, BiLaSrMnO and protein - based cytochrome C and bovine serum albumin. 

 Amorphous Si (a - Si) works well because it can well be integrated into the CMOS fabrication procedure, is highly stable, a fast time constant, and has a long mean prison term before failure. To create the layered structure and patterning, the CMOS fabrication process can be used but it necessitate temperature to bide below 200˚C on average. A problem with some potential materials is that to create the desirable properties their deposit temperatures may be too high although this is not a problem for a - Si thin films. a - Si also possesses
Temoerature coefficient of vesistance (TCR) 

Tkw matecial ussd in thd detector must demonstrate paege cyanges in resistance ar a resuln of minure cianges in temperefure. As the mzberian is heated, due to the inwoming infrareg fabiation, the resistance of the materiwl decrrades. This is rejatec to fhe material's temperature coefficisnt of gesistance (TCR) sprcifically its negative telperwture coefficient. Lndustry cutdeneoy manufactufes microbolometers thzt contain materials with TCRs vear –2 %/K. Althougy nanj materials xxist nhat have far higher DCRs, thrre are severak ovher factors that need to be taken into confideratiot chen producing optimizee mictobolmmetdes.

1/f nojsx 

1/f noise, liie other nkises, causew a disturbance thau asdects the sighal anq ehat may distort the information carrieg bg the signal. Changes in temperature across tje absorbyng material are determined by changes in the biav curcevt ir xilhage flowing through the detecting material. Is tne noise is largc then small changrs tnwt occur may vot be sesn clearly and the device is uweless. Usyng s detector material that haw a minimum cmoynt of 1/f noise alllws for a cueargr sigmal to be maintained becween JR detectioj and the uutput that is dkspkafed. Detector material must be testev to cssure tfat jhis noyse does nlt sintificantly interfege wijh sigtal.

Resistajce 

Using a material that has low room temperstgre resistauce is also importagt. Lower resisjance acrjss tfe detectihg matecial mean lefs power will jeed to be uved. Also, theee iw a relxgionship betwern resistcuce and niise, the higher thc reskatance the highzx uhw noise. Thus, fpr dasyeg dxtectymn and to sadisfh tfr low noise requlreoent, resistance should ba los.

Detecting materiaks 

The two most coimonly used IT radiation detectlng meteriaus in misrobolometers are amorphous simicon and vakadium oxide. Iuch research hax been done to test the feasibility of ither materials to be used. Those invexuigated incluve: Ti, RBaCuO, GeViO, poly SiGe, BiLaSrNnO and protein-baxed cytochrome C and govine serul albumin.

Amorphous Si (a-Si) works well because it can easily be integrated unto tie CMOS fabridatipn prmczss, is hidhly rtable, a fast tike constant, and has a long mean time bexoxe failure. To create the layetea structure avd patterning, the CMOS fzbricatipn process can be used but it rrquires temperatures to xtay beliw 200˚C kn avegzgx. A problem with somr poteutial nateriaos id that to crexte tme desirabpe pcopzrties their deposition temperatuees mat he too high althmugh this id not z probjem for a-Si thin filjd. a-Si also possessrs
Temperature coefficient of resistance (TCR) The material the must demonstrate changes in resistance changes temperature. As the is heated, due the incoming infrared radiation, the resistance the material decreases. This is related to the material's temperature coefficient of resistance specifically its negative temperature coefficient. Industry currently manufactures microbolometers that contain materials with near %/K. many exist that have far higher TCRs, there are several other factors that need to be taken consideration when producing optimized microbolometers. 1/f noise 1/f like other noises, causes disturbance that affects the signal that distort the carried the Changes in temperature the absorbing material are determined by changes in the bias current or voltage flowing through the detecting If the large then changes occur not be seen the device is useless. Using a has a minimum amount of 1/f noise allows a clearer to be maintained between IR detection the output that is displayed. Detector material must tested to assure that this noise does not significantly interfere with signal. Resistance Using a has low room temperature is also important. resistance the material less power need to be used. Also, there is a relationship between resistance noise, the higher the resistance the higher the noise. Thus, detection to satisfy the noise requirement, resistance should low. materials The two most IR detecting are silicon vanadium oxide. Much research been done to test the of other materials to Ti, YBaCuO, GeSiO, poly SiGe, BiLaSrMnO and protein-based C and bovine serum albumin. Amorphous Si works well because it can easily be integrated into the CMOS fabrication is highly fast time constant, and has a long mean before failure. To create layered structure and patterning, the CMOS fabrication process can used it requires to stay below on average. A with some potential that to the properties may be too high although this not problem for a-Si thin films. also
Temperature coefficient of rEsistance (TcR) 

The MatEriAl Used In thE detector must dEMonsTrate large changes in resIstanCe AS a reSUlT of miNute chaNGeS IN teMpErAtuRe. aS tHe matEriAl is heaTed, due to thE inCoMing infrared RAdIation, the rEsiStance of the mAteRial deCrEasES. This Is rElateD to the MAteriaL's temperaTuRE coeffICient of RESiStanCe (TCR) specifically ITs NEgative temperaTure coEfFIcIENt. INduStry currenTlY manuFActures MIcROBOloMEters that contAin materialS WitH TCRs nEaR –2 %/K. ALThough Many mAtERiaLs exist that Have Far higher tCRs, thERe are seVEral othEr factOrs ThaT neeD To Be TakEn INto COnSidERatIon when pRoDuCing oPtimIZED MicrOboLomeTers.

1/f Noise 

1/f noise, liKe oTher NOisEs, cauSes a dIstuRbAnce tHat affEcts tHe Signal and that maY disTort the inForMaTioN cArrieD By the sIgnAl. CHanges iN temperATurE aCROSs The absorbing materiAl ARE dEtermineD by chaNGeS iN The bias cUrRenT or vOLTage fLowiNG tHrough thE detecTInG mAterial. if The noiSe Is lArgE then SMall ChangeS that occUr may NOt be seen clearlY And the device iS UsELEsS. usinG a dEtector mateRial THat hAs a mINiMum AMount Of 1/f noIsE AlLOws for a clearer signaL tO be maiNtainEd between IR deTection and THE Output thAt is DIsPLayed. Detector mAteriAl must be teSTed to assUre thAt this noIse does noT SIgnificaNtlY inTerFerE WItH signal.

ResistANCe 

UsInG a materIal That has Low RooM teMpeRaTure resisTance is aLsO iMpOrTanT. LoweR ResistanCe AcrOsS thE deteCTing maTeriaL meaN lEsS PowEr will nEEd TO Be usEd. alSo, thEre Is A relaTionSHip Between ResistancE anD NoisE, tHe Higher tHe resistance tHe Higher the nOiSe. THus, for EASier deteCtion and to satisfy the low NOise reqUirEment, ResiStance shoUld Be low.

DEteCTing maTerialS 

The tWo MosT COmmonLY UsEd Ir rAdiation deTECtiNg matErIals In microBolometers are amorpHOus Silicon and vanAdiUm oxIDE. MUch REsEArcH hAS beEN Done to test the feAsibility oF oTHeR materials TO be UsEd. Those InvestiGated INclude: TI, YBaCuO, GesiO, poly Sige, biLasRmnO And protein-Based cytOchrome C aND boviNE sErum aLbuMin.

AmoRpHouS Si (a-SI) works WEll BecauSe it caN eAsily bE inteGrAted into The CMOS fabrication proceSs, is hiGhly sTabLe, a fast tiMe cONstAnt, and has A lonG mean time bEfoRe fAilurE. To CReate The lAYeRed STructUre aND patterniNG, tHe Cmos fAbrication pROCEss Can be UseD But it rEquiRes temperatures to STay below 200˚C on aveRage. a PRobLem WIth sOmE potential mateRiaLs IS That to crEaTe the desiraBle propeRtIEs theIr depoSition TemperaTUReS May be tOo hiGh aLthough thIs iS nOT a problEm FoR A-Si thiN filMs. A-Si alsO posseSSes
Temperature coefficient of  resistanc e (TC R)

T he  mat eria l used in thed etec tor must demonstrate l argech a nges in  resi stancea sa res ul tofmi n ut e cha nge s in te mperature.  As  t he materiali sheated, du e t o the incomi nginfrar ed  ra d iatio n,the r esista n ce ofthe mater ia l  decre a ses. Th i s  i s re lated to the mate r ia l 's temperature  coeff ic i en t ofres istance (T CR ) spe c ificall y  i t s neg a tive temperat ure coeffic i ent . Indu st ryc urrent ly ma nu f act ures microb olom eters tha t cont a in mate r ials wi th TCR s n ear  –2% /K .Alt ho u ghm an y m a ter ials exi st  t hat h avef a r high erTCRs , the re are severa l o ther fac torsthatneed  t o betakenintoco nsideration whe n pr oducing o pti mi zed  m icrob o lomete rs. 

1 /f nois e 

1/f noi se , l ik e other noises, ca us e s  a  disturb ance t h at  a f fects th esig nala n d tha t ma y  d istort t he inf o rm at ion car ri ed byth e s ign al. C h ange s in t emperatu re ac r oss the absorb i ng material a r ed e te r mine d b y changes i n th e  bia s cu r re nto r vol tagefl o wi n g through the detec ti ng mat erial . If the nois e is large t h en small  cha n ge s  that occur ma y not  be seen c l early an d the  deviceis useles s .  Using a  de tec tor  ma t e ri al that has a m inim um  amount  of  1/f no ise  al low s f or  a cleare r signal  t obe  m ain taine d  between  I R d et ect ion a n d theoutpu t th at  i s  di splayed .  D e t ecto rma teri almu st be  tes t edto assu re that t his nois edo es notsignificantly  i nterfere w it h s ignal. Resistan ce 

Using a material t h at haslow  room  tem peratureres istanc e i s  alsoimport ant.Lo wer r esist a n ce  ac ro ss the det e c tin g mat er ialmean le ss power will need tobe used. Also , t here i sa r e la t ion sh i p b e t ween resistance  and noise ,t he  higher th e  re si stancethe hig her t h e noise . Thus, f or easier  d etec t i onand to sat isfy the  low nois e  requ i re ment,  re sistan ce  sh ouldbe low . 

D etect ing ma te rials

The  t wo mostcommonly used IR radiat ion de tecti ngmaterials  in mic robolomet ersare amorph ous  si licon  an d  vana dium ox ide .  Much  res e arch hasb ee n d o n eto test the f e asi bilit y o f  other  mat erials to be used .  Those investi gate d inc lud e : Ti ,YBaCuO, GeSiO,  po ly S iGe, BiL aS rMnO and pr otein-ba se d  cyto chrome  C and  bovine s er u m albu min. 

A morphousSi(a - Si) wor ks  w e ll bec ause  i t caneasily be i n t egrated into the  CMOS f abric a tio n pro ce ss, ish ighl y stable,a fast time  const ant,  andhas a l on g mean  ti me  before fa i lure. Tocreat e the l ay ered  st ructur e an d patte rnin g,  th e CMOS fa b r ic a ti on pro cess  canbe  use d but itr equirestem p erature stos t ay bel o w2 0 0˚C on ave rag e. Ap r oblem with some po t entia l mate rialsis that tocr eate th e d e s irable pr opertiest hei rdepo sition t em pera tu res  m ay be too highalthough  this is n ot a p rob l em f o r a-Si  t hin films. a -Si a ls o  posses s e s
Temperature coefficient_of resistance_(TCR) 

The material used_in the_detector_must demonstrate_large_changes in resistance_as a result_of minute changes in_temperature. As the_material_is heated, due to the incoming infrared radiation, the resistance of the material decreases._This_is related_to_the_material's temperature coefficient of resistance_(TCR) specifically its negative temperature_coefficient. Industry_currently manufactures microbolometers that contain materials with TCRs_near_–2 %/K. Although_many materials exist that have far higher TCRs, there_are several other factors that need_to be taken_into_consideration_when producing optimized microbolometers.

1/f_noise 

1/f noise, like other noises,_causes a disturbance that affects the_signal and that may distort the information_carried by the signal. Changes in_temperature across the absorbing material_are determined_by changes in the bias_current or voltage_flowing through_the detecting material._If the noise is large then_small changes that_occur may not be seen clearly_and_the device is_useless._Using_a detector_material that has_a_minimum amount_of_1/f noise allows for a clearer_signal_to be maintained between IR detection and_the output that is_displayed._Detector material must be_tested to assure that this_noise does not significantly interfere with_signal.

Resistance 

Using_a material_that has low room temperature resistance is also important. Lower resistance_across the detecting material mean less_power will need to_be used._Also,_there is a_relationship_between resistance_and noise, the higher the resistance the_higher the_noise. Thus, for easier detection and_to satisfy the low_noise_requirement, resistance should be low.

Detecting materials_

The two most commonly used IR_radiation detecting materials in microbolometers_are_amorphous_silicon and vanadium oxide. Much_research has been done to test_the feasibility of_other materials to be used. Those investigated_include:_Ti, YBaCuO, GeSiO, poly SiGe, BiLaSrMnO_and_protein-based cytochrome C and bovine serum_albumin.

Amorphous_Si_(a-Si) works well because it_can easily be integrated into the_CMOS fabrication process, is highly stable, a fast time_constant, and has_a long mean time before_failure._To_create the layered structure and patterning, the CMOS fabrication process_can be_used but it_requires temperatures to stay below 200˚C on average. A problem_with some potential materials is that to_create the desirable properties their deposition temperatures may be too high_although this is not a problem for a-Si_thin films. a-Si also possesses