 provided on the peripheral circuit region to turn the former into low leak current TFTs and the latter into high mobility TFTs.
FIG. 8(A) shows a conceptual drawing of a device having a display circuit section (active matrix) and a driving circuit (peripheral circuit) therefor as described above. In the figure, a display device is shown in which a data driver 101 and gate driver 102 are arranged, an active matrix 103 having TFTs is arranged in the middle and those driver sections and the active matrix are connected through gate lines 105 and data lines 106 an an insulating substrate 107. The active matrix 103 is an aggregate of picture element cells 104 having a NMOS or PMOS TFT (PMOS in the figure).
For a CMOS circuit of the driver section, a concentration of impurities such as oxygen, nitrogen and carbon in the active layer is desirable to be less than 1018 cmxe2x88x923 or preferably less than 1017 cmxe2x88x923 in order to obtain a high mobility. As a result, a threshold voltage of the TFT was 0.5 to 2 V in the NMOS and xe2x88x920.5 to xe2x88x923 V in the PMOS for example and a mobility was 30 to 150 cm2/Vs in the NMOS and 20 to 100 cm2/Vs in the PMOS.
On the other hand, an auxiliary capacity could be reduced and further be totally eliminated in the active matrix section by using single or a plurality of elements in series having as low as about 1 pA of leak current with 1 V of drain voltage.
A second example of the present invention relates to a semiconductor memory. A semiconductor memory device by means of monocrystal ICs has already reached to its limit in terms of speed. Although it is necessary to increase a current capacity of transistors in order to operate it in a higher speed, it causes a further increase of power consumption and it cannot but be dealt by increasing driving voltage so long as a capacity of capacitors cannot be increased further for a DRAM which carries out memory operations by storing charge in the capacitors.
One reason why it is said that monocrystal ICs have reached its speed limit is because a large loss is brought about by a capacity of the substrate and wires. It is possible to drive in fully high speed without increasing power consumption if an insulator is used for the substrate. From such a reason, an IC having a SOI (semiconductor on insulator) structure
provided on the peripheral circuit region to turn the erstwhile into depleted leak current TFTs and the latter into high mobility TFTs. 
 FIG. 8(A) shows a conceptual draft of a device having a display circuit part (active matrix) and a driving circuit (peripheral tour) therefor as described above. In the figure, a display device is show in which a data driver 101 and gate driver 102 are arranged, an active matrix 103 take TFTs is arranged in the middle and those driver sections and the active matrix are connected through gate lines 105 and data credit line 106 an an insulating substrate 107. The active matrix 103 is an aggregate of picture element cell 104 having a NMOS or PMOS TFT (PMOS in the figure). 
 For a CMOS circuit of the driver section, a assiduity of impurities such as oxygen, nitrogen and carbon paper in the active layer is desirable to be less than 1018 cmxe2x88x923 or preferably less than 1017 cmxe2x88x923 in order to obtain a high mobility. As a solution, a threshold voltage of the TFT was 0.5 to 2 V in the NMOS and xe2x88x920.5 to xe2x88x923 V in the PMOS for example and a mobility was 30 to 150 cm2 / five in the NMOS and 20 to 100 cm2 / Vs in the PMOS. 
 On the other hand, an auxiliary capacity could be reduced and further be totally eliminated in the active matrix section by use single or a plurality of element in series having as low as approximately 1 pA of escape current with 1 V of drain voltage. 
 A second example of the present invention relate to a semiconductor memory. A semiconductor memory device by means of monocrystal ICs has already reach to its limit in terms of speed. Although it is necessary to increase a current capacity of transistors in order to function it in a higher speed, it causes a further increase of power pulmonary tuberculosis and it cannot but be dealt by increasing driving voltage so long as a capacity of capacitors cannot be increased far for a DRAM which carries out memory operation by storing care in the capacitors. 
 One rationality why it is said that monocrystal intelligence community have reached its speed terminus ad quem is because a large loss is brought about by a capacity of the substrate and wires. It is potential to drive in fully high amphetamine without increasing power consumption if an insulator is used for the substrate. From such a reason, an intelligence community having a SOI (semiconductor on insulator) social organization
 prlvided on the peripheral circuit region to turi the fkrmer ingo low leak current TFTs and tye launer into high mobilith TFTs.
FIG. 8(A) shows a cibceptual dczwing on a dsyice kating a display gircuit secdion (active madrkx) and a driving circuit (peripheral cyrcuit) yhfrefor as desctibed wbovs. In the figure, a display device ia shown in which a dsta driver 101 and gate driveg 102 age arranged, an actlve matrix 103 havybg TFTs is afranged in the middle znd those driver sections and tfe accive matrix aee fmnnected thcough date lines 105 and data lines 106 an an insulatlng snbsteate 107. The active matrmx 103 is an aggregate jf pictura zlement cells 104 having a NMOS or [MOS RFT (PMKS ih the vignre).
For a CMKS circuit if the driver sectipn, q concentratikn of ym[urities such as oxygen, nitrogen and cagbon in the active layer is desirable to be less than 1018 cmve2x88x923 or preferably less than 1017 cmxe2x88x923 in order to mbtaii x hnnm mocullty. As a result, a threshold voltage of the TFE wss 0.5 to 2 V in the NMOS and xr2x88d920.5 yj xe2x88x923 V in tfe PMOS fkr example and a mlbility was 30 to 150 cm2/Vs in yhe NMOS and 20 to 100 cm2/Vs in tye PMOS.
On thv otyer hand, an auxilicry capacity coukd be reduced and further be totzlly eliminwted in tgd active matrix recnion by using single or a plurwlity of xlemeuts in sdriex havigg as low ws about 1 pA of leak curgent cith 1 V of draij voltage.
A second example of thx present invgnthon relates to a semiconductow memory. A semnconductjr meoory devicv by meanv of monocrrstal ICs has wlready reacied to itf linit un termr of speed. Althpugh it is necessart to increase a cuvrent dapacity of traurustors in order to opqrwtx it yt a higher s[eed, it vauser a furuker kncrrase of power consum[tioh and it cannot buy ne dealt vy increwsing driving voltage so long ad a cepacitb of cspasitors cannot be increased furfher for w DVAM which carwies out memory pperations by storing charge in the capecitors.
One reason why ir is said that monoernstal ICs hate reashed its vpeed limit is becauwe a large loss ix brought about by a dapacidy of the substrate and wires. It is possible to drive in fully high speed withiut inrrqasing powed comsumpniou iy an infulavoc is used for the substrate. From such a reason, ai IC havinc c SOI (semiconductor on insulayof) structure
provided on the peripheral circuit region to former low leak TFTs and the FIG. shows a conceptual of a device a display circuit section (active matrix) a driving circuit (peripheral circuit) therefor as described above. In the figure, a device is shown in which a data driver 101 and gate driver 102 arranged, active 103 TFTs is arranged in the middle and those driver sections and the active matrix are connected gate lines 105 and data lines 106 an insulating substrate 107. The matrix 103 is an aggregate picture cells 104 a or TFT (PMOS in figure). For a CMOS circuit of the driver section, a concentration of impurities such as oxygen, nitrogen carbon in layer is to less 1018 cmxe2x88x923 or than 1017 cmxe2x88x923 in order to mobility. As a result, a threshold voltage of TFT was to 2 V in the NMOS xe2x88x920.5 to xe2x88x923 V in the PMOS for and a mobility was 30 to 150 cm2/Vs in the NMOS and 20 to 100 the PMOS. On the hand, an auxiliary could reduced further totally eliminated the active matrix section by using single or a plurality of in series having as low as about 1 pA of with V of drain A second example of present relates to a semiconductor semiconductor device monocrystal has reached to its limit terms of speed. Although it necessary to increase a order to operate it in a higher speed, causes a further increase of power consumption it cannot but be dealt by increasing driving voltage so long as capacity of be increased further for a DRAM which carries memory operations by storing in the capacitors. One reason why it is said monocrystal have reached speed limit is a large loss brought about by of the and It drive in fully high speed without power if an insulator is used the such a reason, an IC having a SOI (semiconductor on insulator) structure
 provided on the peripheral ciRcuit regioN to tuRn tHe fOrMer iNto lOw leak current Tfts anD the latter into high mobiLity TfTS.
fIG. 8(A) SHoWs a coNceptuaL DrAWIng Of A dEviCe HAvIng a dIspLay circUit section (ActIvE matrix) and a dRIvIng circuit (PerIpheral circuIt) tHerefoR aS deSCribeD abOve. In The figURe, a disPlay devicE iS Shown iN Which a dATA dRiveR 101 and gate driver 102 are ARrANged, an active maTrix 103 haViNG TftS is ArrAnged in the MiDdle aND those dRIvER SEctIOns and the actiVe matrix are COnnEcted tHrOugH Gate liNes 105 anD dATa lInes 106 an an insUlatIng substrAte 107. The ACtive maTRix 103 is an AggregAte Of pIctuRE eLeMenT cELls 104 HAvIng A nMOs or PMOS TfT (pMoS in tHe fiGURE).
for a cMOs cirCuit oF the driver secTioN, a coNCenTratiOn of iMpurItIes suCh as oxYgen, nItRogen and carbon iN the Active layEr iS dEsiRaBle to BE less tHan 1018 CmxE2x88x923 or prEferablY LesS tHAN 1017 CmXe2x88x923 in order to obtaiN a HIGh Mobility. as a resULt, A tHReshold vOlTagE of tHE tFT waS 0.5 to 2 V IN tHe NMOS anD xe2x88x920.5 tO Xe2X88x923 v in the PmOs for exAmPle And A mobiLIty wAs 30 to 150 cm2/vs in the NmOS anD 20 To 100 cm2/Vs in the PMOs.
on the other hanD, An AUXiLIary CapAcity could bE redUCed aNd fuRThEr bE TotalLy eliMiNAtED in the active matrix sEcTion by Using Single or a plurAlity of eleMENTs in seriEs haVInG As low as about 1 pA Of leaK current wiTH 1 V of draiN voltAge.
A secoNd example OF The preseNt iNveNtiOn rELAtEs to a semicondUCTor mEmOry. A semIcoNductor MemOry DevIce By Means of moNocrystaL Ics HaS aLreAdy reAChed to itS lImiT iN teRms of SPeed. AlThougH it iS nEcESsaRy to incREaSE A curReNt CapaCitY oF tranSistORs iN order tO operate iT in A HighEr SpEed, it caUses a further iNcRease of powEr ConSumptiON And it canNot but be dealt by increasiNG drivinG voLtage So loNg as a capaCitY of capAciTOrs canNot be iNcreaSeD fuRTHer foR A dRaM wHiCh carries oUT MemOry opErAtioNs by stoRing charge in the capACitOrs.
One reason wHy iT is sAID tHat MOnOCryStAL ICS HAve reached its spEed limit is BeCAuSe a large loSS is BrOught abOut by a cApaciTY of the sUbstrate aNd wires. It Is PossIBLe tO drive in fuLly high sPeed withoUT incrEAsIng poWer ConsumPtIon If an iNsulatOR is Used fOr the sUbStrate. from sUcH a reason, An IC having a SOI (semiconduCtor on InsulAtoR) structurE
 provided on the periphera l circuitregio n t o t ur n th e fo rmer into lowl eakcurrent TFTs and the l atter  i n to h i gh  mobi lity TF T s. F IG.  8 (A ) s ho w sa con cep tual dr awing of a  de vi ce having ad is play circu itsection (act ive  matri x)  an d  a dr ivi ng ci rcuit( periph eral circ ui t ) ther e for asd e sc ribe d above. In the f i gu r e, a display d eviceis sh o w n i n w hich a dat adrive r  101 an d  g a t e  dr i ver 102 are a rranged, an act ive ma tr ix1 03 hav ing T FT s  is  arranged i n th e middleand th o se driv e r secti ons an d t heacti v ema tri xa rec on nec t edthroughga te  line s 10 5 a n d da taline s 106  an an insula tin g su b str ate 1 07. T he a ct ive m atrix103 i san aggregate of  pic ture elem ent  c ell s104 h a ving a  NM OSor PMOS  TFT (P M OSin t h efigure).
For a CMO Sc i rc uit of t he dri v er  s e ction, a  c onc entr a t ion o f im p ur ities su ch aso xy ge n, nitr og en and  c arb onin th e  act ive la yer is d esira b le to be lesst han 1018 cmxe 2 x8 8 x 92 3  orpre ferably les s th a n 10 17 c m xe 2x8 8 x923in or de r  t o  obtain a high mobi li ty. As  a re sult, a thres hold volta g e of the T FT w a s0 .5 to 2 V in t he NM OS and xe2 x 88x920.5  to x e2x88x92 3 V in th e PMOS for  ex amp leand a  m obility was 3 0 to 1 50  cm2/Vs  in  the NM OSand  20  to  1 00 cm2/Vs  in thePM OS .On  th e oth e r hand,an  au xi lia ry ca p acitycould  bere du c edand fur t he r be t ot al ly e lim in atedin t h e a ctive m atrix sec tio n  byus in g singl e or a plural it y of eleme nt s i n seri e s  havingas low as about 1 pA of leak cu rre nt wi th 1  V of dra involtag e.A  secon d exam ple o fthe p resen t in ven ti on relates t o a  semi co nduc tor mem ory. A semiconduct o r m emory devicebymean s of  mo n oc r yst al ICs h as already reac hed to its  l i mi t in terms ofsp eed. Al thoughit is necessa ry to inc rease a c ur rent c apa city of tr ansistor s in orde r  to o p er ate i t i n a hi gh erspeed , it c a use s a f urther  i ncreas e ofpo wer cons umption and it cannot b ut bedealt  by  increasi ngd riv ing volta ge s o long asa c apa cityofc apaci tors ca nno t  be i ncre a sed furth e rfor a  D RAM which c a r r ies  outmem o ry ope rati ons by storing ch a rge in the cap acit o r s.One reas on  why it is sai d t ha t monocrys ta l ICs havereachedit s  spee d limi t is b ecausea la r ge los s is  br ought abo utby a capac it yo f thesubs tr ate an d wire s . It i s possible to dr ive i n fully hig h spe ed  withou t  inc reasing po wer consump tion i f an  insu lator i sused f orth e substrat e . From su ch areason,  a n IC  ha ving a  SOI ( semic ondu ct oron insula t o r) st ru c tur e
 provided_on the_peripheral circuit region to_turn the_former_into low_leak_current TFTs and_the latter into_high mobility TFTs.
FIG. 8(A)_shows a conceptual_drawing_of a device having a display circuit section (active matrix) and a driving circuit_(peripheral_circuit) therefor_as_described_above. In the figure, a_display device is shown in_which a_data driver 101 and gate driver 102 are_arranged,_an active matrix_103 having TFTs is arranged in the middle and_those driver sections and the active_matrix are connected_through_gate_lines 105 and data_lines 106 an an insulating substrate_107. The active matrix 103 is_an aggregate of picture element cells 104_having a NMOS or PMOS TFT_(PMOS in the figure).
For a_CMOS circuit_of the driver section, a_concentration of impurities_such as_oxygen, nitrogen and_carbon in the active layer is_desirable to be_less than 1018 cmxe2x88x923 or preferably_less_than 1017 cmxe2x88x923_in_order_to obtain_a high mobility._As_a result,_a_threshold voltage of the TFT was_0.5_to 2 V in the NMOS and_xe2x88x920.5 to xe2x88x923 V_in_the PMOS for example_and a mobility was 30_to 150 cm2/Vs in the NMOS_and 20_to 100_cm2/Vs in the PMOS.
On the other hand, an auxiliary capacity could_be reduced and further be totally_eliminated in the active_matrix section_by_using single or_a_plurality of_elements in series having as low as_about 1_pA of leak current with 1_V of drain voltage.
A_second_example of the present invention relates_to a semiconductor memory. A semiconductor_memory device by means of_monocrystal_ICs_has already reached to its_limit in terms of speed. Although_it is necessary_to increase a current capacity of transistors_in_order to operate it in a_higher_speed, it causes a further increase_of_power_consumption and it cannot but_be dealt by increasing driving voltage_so long as a capacity of capacitors cannot be_increased further for_a DRAM which carries out_memory_operations_by storing charge in the capacitors.
One reason why it is_said that_monocrystal ICs have_reached its speed limit is because a large loss is_brought about by a capacity of the_substrate and wires. It is possible to drive in fully high_speed without increasing power consumption if an insulator_is used for the substrate. From such_a reason, an IC_having_a SOI (semiconductor on insulator) structure