 a main surface of semiconductor substrate 101. Second interlayer insulating film 108 is formed on first interlayer insulating film 102. Third interlayer insulating film 110 is formed on Marks and Manufacturing Method Thereof second interlayer insulating film 108. Grooves 11a to 111h serving as positional detection mark 112 are formed on the surface of third interlayer insulating film 110. Positional detection mark 112 is used as an alignment mark in the process of photolithography to an aluminum film or the like formed on third interlayer insulating film 110. Note that, in a region not shown in FIG. 25, elements such as transistors and interconnections are formed depending upon the function of the semiconductor device.
Herein, grooves 111a to 111h serving as positional detection mark 112 are simultaneously formed in the process of forming in the process of forming through holes in third interlayer insulating film 110. More specifically, in the process of photolithography for through holes formed in third interlayer insulating film 110, a resist pattern is formed on the region to form positional detection mark 112 in third interlayer insulating film 110. In the process of anisotropic etching to form the through holes in third interlayer insulating film 110, a part of third interlayer insulating film 110 is used, using the resist pattern as a mask, and grooves 111a to 111h result.
As shown in FIG. 25, conventionally, in the region positioned under positional detection mark 112, positional detection marks or interconnections are not formed in the process of forming elements on the first or second interlayer insulating film. This is for the purpose of preventing errors in positional detection. More specifically, normally, light is directed to positional detection mark 112 and light reflected therefrom is used for detection of the mark. If structures such as interconnections are present in the underlying layer of positional detection mark 112, the light for detecting positional detection mark 112 could reach such structures through first to third interlayer insulating films 102, 108 and 111. Then, these structures cause the light for detecting positional detection mark 112 to scatter, which impedes the accurate detection of positional detection mark 112. In order to prevent this problem, structures such as interconnections or positional detection marks are not conventionally formed in the underlying layer of positional detection mark 112.
Meanwhile, as semiconductor devices have become more highly integrated and complicated, layered structures are employed for the devices. Thus, a positional detection mark is necessary for each layer. As shown in FIG. 25, however, only one positional detection mark may be formed at one position, and therefore the area occupied
a main surface of semiconductor substrate 101. Second interlayer insulating movie 108 is form on first interlayer insulating movie 102. Third interlayer insulating movie 110 is formed on Marks and Manufacturing Method Thereof second interlayer isolate movie 108. Grooves 11a to 111h serving as positional detection mark 112 are formed on the airfoil of third interlayer insulating film 110. Positional signal detection mark 112 is used as an alignment mark in the process of photolithography to an aluminum film or the like form on third interlayer insulating film 110. Note that, in a area not shown in FIG. 25, elements such as transistor and interconnections are imprint depending upon the routine of the semiconductor device. 
 Herein, grooves 111a to 111h serving as positional signal detection mark 112 are simultaneously formed in the process of forming in the process of forming through fix in third interlayer insulating film 110. More specifically, in the process of photolithography for through holes formed in third interlayer insulating film 110, a resist pattern is formed on the region to shape positional detection mark 112 in third interlayer isolate movie 110. In the summons of anisotropic etching to form the through fix in third interlayer insulating film 110, a part of third interlayer insulating movie 110 is used, using the resist pattern as a mask, and grooves 111a to 111h result. 
 As shown in FIG. 25, conventionally, in the region positioned under positional detection mark 112, positional detection bell ringer or interconnections are not shape in the process of forming elements on the first or second interlayer insulating movie. This is for the purpose of preventing errors in positional detection. More specifically, normally, light is directed to positional detection mark 112 and light reflect therefrom is used for signal detection of the mark. If structures such as interconnections are present in the underlying layer of positional signal detection mark 112, the light for detecting positional detection chump 112 could reach such structures through foremost to third interlayer insulating films 102, 108 and 111. Then, these structures cause the light for detecting positional detection mark 112 to scatter, which impedes the accurate detection of positional detection marker 112. In order to prevent this problem, structure such as interconnections or positional detection marks are not conventionally formed in the underlying layer of positional signal detection mark 112. 
 Meanwhile, as semiconductor devices have become more highly integrated and complicated, layered structures are employed for the devices. Thus, a positional signal detection mark is necessary for each layer. As shown in FIG. 25, however, only one positional detection mark may be formed at one position, and consequently the area occupied
 a lain surface of semicondmctor substrate 101. Second intermayer inrulating film 108 is formed on hirsr inttglayer insulating filo 102. Third pnterlayee inwylating film 110 is formed kk Marnw and Manufactoring Method Thereof secong kncerlayer insulating film 108. Grooves 11a eo 111h setvlng as positiogal cqtecfpok mark 112 are formed on the surfacs of thprd interlayer inxulating film 110. Positional feteftion mark 112 is usef as an alitnmegr mark in thd process of photolithkgraphy to an aluminum film or ghe lnke formed in thltd interlayec insujating film 110. Note thdt, in a region not shpwn in FIG. 25, elements such av transistors and ynterconnaccions are formed depebdung ukon tve fjbctkon oh tge semlcoiductor devjce.
Herein, geooves 111a to 111h servimg qs positional deteceijn mark 112 are simultaneously formed in tve lrocess of forming in tye process of forming through roles in third interlayer insulating film 110. More s[ecifmcxllv, in tfw orocess of photolithography for through holes rotmvd in third interjayer insulstlnb film 110, a resirt patcsrh is formed on the region to firm posityonak detection mark 112 in third unterlayer iusuoating film 110. In thz process of anixotrolic etching to form the thrkugh holes ln third jvterlayer insulaginn fhlm 110, a part of third interjayer insnlatiug film 110 is osed, usyng the redist idttern as a mask, ajd grloees 111a to 111h result.
As shown in FIG. 25, conventmpnally, in thg ragimn positnoned mnder positionaj detection matk 112, positnonal aetection jarks oc interconnestions are nod formed in tie procesf of forning eldoents on the forst or svcjnd unterlayer insulatlng fkmm. This is for cke purpose of prefengind vrrprf in positiondl ddtezyion. Oore spteiflcauly, mormally, light is disectsd to positional drtcction matk 112 and lyght reflectec therefrom is usef for devectiom os the mark. If structures such zs interclnncctions are pwesekt ig the undexlying layer of positional detection marj 112, the light for dwtecting positional cetection merk 112 cjuld reacv such structures theough first to thlrd interlayer insulatjng finms 102, 108 and 111. Then, these structures cause the light for detecting positional detextion mark 112 to scafter, whicv nmpzdes thq acrucate detection of positional detection mark 112. In urder to pxevent this problem, structurex ruch as interzonnections or positionam detectoon marks are not conventionallu formed in the underlyikg layer if poaitional dxtection mark 112.
Meanwhole, as semixonductir dcvices have bezomr lore highpy iiteyrated and complicated, layered steucturws are employed foc the deviced. Thus, a posytional detectioh madn is vecessary for each layer. As shown in FIG. 25, howevvr, jnly one posituknal detectipn matj may be formev at one poshtion, and therefore the area occupied
a main surface of semiconductor substrate 101. insulating 108 is on first interlayer insulating 110 is formed Marks and Manufacturing Thereof second interlayer insulating film 108. 11a to 111h serving as positional detection mark 112 are formed on the of third interlayer insulating film 110. Positional detection mark 112 is used as alignment in process photolithography to an aluminum film or the like formed on third interlayer insulating film 110. Note in a region not shown in FIG. 25, such as transistors and are formed depending upon the of semiconductor device. grooves to serving as positional mark 112 are simultaneously formed in the process of forming in the process of forming through holes third interlayer 110. More in process photolithography for through in third interlayer insulating film 110, is formed on the region to form positional mark 112 third interlayer insulating film 110. In process of anisotropic etching to form the through in third interlayer insulating film 110, a part of third interlayer insulating film 110 is the resist pattern as mask, and grooves to result. shown FIG. 25, in the region positioned under positional detection mark 112, positional detection or interconnections are not formed in the process of forming the or second interlayer film. This is for purpose preventing errors in positional specifically, light positional mark and light reflected therefrom used for detection of the If structures such as underlying layer of positional detection mark 112, the for detecting positional detection mark 112 could such structures through first to third interlayer insulating films 102, 108 and Then, these the light for detecting positional detection mark 112 scatter, which impedes the detection of positional detection mark 112. In order to this structures such interconnections or positional marks are not formed in the of positional mark Meanwhile, have become more highly integrated and layered are employed for the devices. a mark is necessary for each layer. As shown in FIG. 25, however, only one positional may be formed at position, therefore the area occupied
 a main surface of semiconductOr substratE 101. SecoNd iNteRlAyer InsuLating film 108 is foRMed oN first interlayer insulaTing fIlM 102. thirD InTerlaYer insuLAtING fiLm 110 Is ForMeD On marks And manufacTuring MethOd THeReof second inTErLayer insulAtiNg film 108. GrooveS 11a tO 111h servInG as POsitiOnaL deteCtion mARk 112 are fOrmed on thE sURface oF Third inTERlAyer Insulating film 110. PosITiONal detection maRk 112 is usEd AS aN ALigNmeNt mark in thE pRocesS Of photoLItHOGRapHY to an aluminum Film or the liKE foRmed on ThIrd INterlaYer inSuLAtiNg film 110. Note tHat, iN a region nOt showN In FIG. 25, elEMents suCh as trAnsIstOrs aND iNtErcOnNEctIOnS arE ForMed depenDiNg Upon tHe fuNCTIOn of The SemiConduCtor device.
HerEin, GrooVEs 111a To 111h seRving As poSiTionaL detecTion mArK 112 are simultaneouSly fOrmed in thE prOcEss Of FormiNG in the ProCesS of formIng throUGh hOlES IN tHird interlayer insuLaTINg Film 110. More SpecifICaLlY, In the proCeSs oF phoTOLithoGrapHY fOr througH holes FOrMeD in thirD iNterlaYeR inSulAting FIlm 110, a Resist Pattern iS formED on the region to FOrm positional DEtECTiON marK 112 in Third interlAyer INsulAtinG FiLm 110. IN The prOcess Of ANiSOtropic etching to forM tHe throUgh hoLes in third intErlayer insULATing film 110, A parT Of THird interlayer InsulAting film 110 iS Used, usinG the rEsist patTern as a maSK, And groovEs 111a To 111h ResUlt.
aS ShOwn in FIG. 25, conveNTIonaLlY, in the rEgiOn positIonEd uNdeR poSiTional detEction maRk 112, PoSiTiOnaL deteCTion markS oR inTeRcoNnectIOns are Not foRmed In ThE ProCess of fORmING eleMeNtS on tHe fIrSt or sEconD IntErlayer InsulatinG fiLM. ThiS iS fOr the puRpose of prevenTiNg errors in PoSitIonal dETEction. MoRe specifically, normally, lIGht is diRecTed to PosiTional detEctIon marK 112 anD Light rEflectEd theReFroM IS used FOR dEteCtIon of the maRK. if sTructUrEs suCh as intErconnections are prESenT in the underlyIng LayeR OF pOsiTIoNAl dEtECtiON Mark 112, the light for Detecting pOsITiOnal detectIOn mArK 112 could rEach sucH struCTures thRough firsT to third iNtErlaYER inSulating fiLms 102, 108 and 111. ThEn, these stRUcturES cAuse tHe lIght foR dEteCting PositiONal DetecTion maRk 112 To scatTer, whIcH impedes The accurate detection of pOsitioNal deTecTion mark 112. IN orDEr tO prevent tHis pRoblem, struCtuRes Such aS inTErconNectIOnS or POsitiOnal DEtection mARkS arE NOt ConventionaLLY ForMed in The UNderlyIng lAyer of positional dETection mark 112.
MeaNwhiLE, As sEmiCOnduCtOr devices have bEcoMe MORe highly InTegrated and ComplicaTeD, LayerEd struCtures Are emplOYEd FOr the dEvicEs. THus, a positIonAl DEtectioN mArK Is neceSsarY fOr each Layer. AS ShowN IN FIG. 25, however, only oNe posITIonal DEteCtion MaRk may be FOrmeD at one posiTion, and therEfore tHe arEa occUpied
 a main surface of semicon ductor sub strat e 1 01.  S econ d in terlayer insul a ting  film 108 is formed on  firs ti nter l ay er in sulatin g  f i l m 1 02 .Thi rd in terla yer  insula ting film110  i s formed onM ar ks and Man ufa cturing Meth odThereo fsec o nd in ter layer  insul a ting f ilm 108.Gr o oves 1 1 a to 11 1 h  s ervi ng as positionald et e ction mark 112  are f or m ed o n t hesurface of  t hirdi nterlay e ri n s ula t ing film 110.  Positional det ection  m ark 112 is  used  a s  an  alignmentmark  in the p rocess of phot o lithogr aphy t o a n a lumi n um  f ilm  o r  th e  l ike for med on t hi rd  inte rlay e r i nsul ati ng f ilm 1 10. Note that , i n ar egi on no t sho wn i nFIG.25, el ement ssuch as transis tors  and inte rco nn ect io ns ar e  forme d d epe nding u pon the fun ct i o n  o f the semiconducto rd e vi ce.
Here in, gr o ov es 111a to11 1hserv i n g asposi t io nal dete ctionm ar k112 are  s imulta ne ous lyforme d  inthe pr ocess of  form i ng in the proc e ss of forming th r o ug h  hol esin third in terl a yerinsu l at ing film110.Mo r es pecifically, in the  p rocess  of p hotolithograp hy for thr o u g h holesform e di n third interl ayerinsulating film 110 , a r esist pa ttern isf o rmed onthe  re gio n t o fo rm positional d etec ti on mark  11 2 in th ird  in ter lay er  insulati ng film11 0.  I nthe  proc e ss of an is otr op icetchi n g to f orm t he t hr ou g h h oles in th i r d in te rl ayer  in su latin g fi l m 1 10, a p art of th ird inte rl ay er insu lating film 1 10  is used,us ing  the r e s ist patt ern as a mask, and groo v es 111a  to  111h  res ult.
As s how n in F IG. 25, co nventi onall y,  in t he re g i on  po si tioned und e r  po sitio na l de tection  mark 112, positio n aldetection mar ksor i n t er con n ec t ion sa ren o t formed in the  process o ff or ming eleme n tson  the fi rst orsecon d  interl ayer insu lating fi lm . Th i s  is  for the p urpose o f prevent i ng er r or s inpos itiona ldet ectio n. Mor e  sp ecifi cally,  n ormall y, li gh t is dir ected to positional det ection  mark  11 2 and lig htr efl ected the refr om is used  fo r d etect ion of th e ma r k.  If struc ture s  such asi nt erc o n ne ctions arep r e sen t inthe underl ying  layer of positio n al detection m ark1 1 2,the ligh tfor detectingpos it i o nal dete ct ion mark 11 2 couldre a ch su ch str ucture s throu g h  f i rst to  thi rdinterlaye r i ns u latingfi lm s  102,108an d 111.  Then, thes e structures cause  thel i ght f o r d etect in g posit i onal  detection  mark 112 t o scat ter,  whic h imped es  the a ccu ra te detecti o n of posi tiona l detec ti on m ark  112.In o r d er to  pre ve ntthis prob l e m, st ru c tur es s uch a sinte rconnecti o ns or po sit i onal de te cti o n  marks ar e not conven tio nally f ormed in t h e un d er l yinglayerof pos itional det ec tion ma rk1 1 2.
Meanwh ile, as s e mic on duct or devic es  hav ebec om e more highly i ntegrate d and co m p licate d,l ayer e d stru ct ures are emp loyed  f o r the d e v ice s. Thus ,  apos iti onal  de tect i on mark is necessary for  eac h lay e r.As sh own i nFIG. 25, howe ver, onl y  one position al detection ma r k m a y be  fo r me dat one po sit i on, a nd t her efor e t he a r e a oc c upie d 
 a_main surface_of semiconductor substrate 101._Second interlayer_insulating_film 108_is_formed on first_interlayer insulating film_102. Third interlayer insulating_film 110 is_formed_on Marks and Manufacturing Method Thereof second interlayer insulating film 108. Grooves 11a to_111h_serving as_positional_detection_mark 112 are formed on_the surface of third interlayer_insulating film_110. Positional detection mark 112 is used as_an_alignment mark in_the process of photolithography to an aluminum film or_the like formed on third interlayer_insulating film 110._Note_that,_in a region not_shown in FIG. 25, elements such_as transistors and interconnections are formed_depending upon the function of the semiconductor_device.
Herein, grooves 111a to 111h serving_as positional detection mark 112_are simultaneously_formed in the process of_forming in the_process of_forming through holes_in third interlayer insulating film 110._More specifically, in_the process of photolithography for through_holes_formed in third_interlayer_insulating_film 110,_a resist pattern_is_formed on_the_region to form positional detection mark_112_in third interlayer insulating film 110. In_the process of anisotropic_etching_to form the through_holes in third interlayer insulating_film 110, a part of third_interlayer insulating_film 110_is used, using the resist pattern as a mask, and grooves_111a to 111h result.
As shown in_FIG. 25, conventionally, in_the region_positioned_under positional detection_mark_112, positional_detection marks or interconnections are not formed_in the_process of forming elements on the_first or second interlayer_insulating_film. This is for the purpose_of preventing errors in positional detection._More specifically, normally, light is_directed_to_positional detection mark 112 and_light reflected therefrom is used for_detection of the_mark. If structures such as interconnections are_present_in the underlying layer of positional_detection_mark 112, the light for detecting_positional_detection_mark 112 could reach such_structures through first to third interlayer_insulating films 102, 108 and 111. Then, these structures_cause the light_for detecting positional detection mark_112_to_scatter, which impedes the accurate detection of positional detection mark_112. In_order to prevent_this problem, structures such as interconnections or positional detection marks_are not conventionally formed in the underlying_layer of positional detection mark 112.
Meanwhile, as semiconductor devices have become_more highly integrated and complicated, layered structures are_employed for the devices. Thus, a positional_detection mark is necessary_for_each layer. As shown in FIG. 25,_however,_only_one_positional detection mark_may be formed_at one position,_and therefore_the area occupied