 FDM (Frequency Division Multiplex) and TDM (Time Division Multiplex), however, the interference between the cells cannot be identified as heat noise and, therefore, a great influence is given to the transmission. The similar problem occurs even in the OFDM modulation (for example, 3GPP, TS 25.214 V5.11.0 (2005-06), 6A HS-DSCH-related procedures) that has been developed recently since its multiplexing scheme is the FDM or the TDM.
There is a problem that in the radio communication system employing the conventional multi-carrier modulation, a great influence is given to the transmission since the interference between the cells cannot be identified as heat noise. Technical Field
The present disclosure relates to a method of manufacturing bistable strips having different curvatures.
Discussion of the Related Art
FIG. 1 corresponds to FIG. 2D of French patent application 2988911 filed on Apr. 3, 2012 (B11532), also published in 2013/0280549, which is hereby incorporated by reference in its entirety. FIG. 1 is a cross-section view of a curved bimetal strip at a step of its manufacturing. On a substrate 1, for example, a silicon substrate, blocks 3 are formed, having layers of different materials, for example, metallic materials 5 and 7 forming a bimetal, deposited thereon. Bimetal portions, corresponding to portions of layers 5 and 7 resting on blocks 3, are then cut to form the desired curved strips. Typically, the blocks 3 are removed.
Such a manufacturing method comprises two steps. In a first step, blocks defining the curvature of the curved strips are formed and in a second step, the layers of materials forming the bimetal are deposited.
The block manufacturing method does not enable to accurately control the block curvature. Further, manufacturing batches containing a plurality of bimetals with different bimetal curvatures from one batch to another is difficult. Inductor-capacitor voltage-controlled oscillators (LC tank VCOs) generate signals at a particular frequency, or are able to pick out a signal at a particular frequency from a more complex signal. LC tank VCOs are employed in a broad range of integrated circuit applications including frequency tuning, voltage/current magnification, RF amplifiers, and Foster-Seeley discriminators. An LC tank VCO includes an inductor-capacitor tuned circuit (LC tank) which oscillates at a particular frequency (frequency of oscillation) determined by the characteristics
FDM (Frequency Division Multiplex) and TDM (Time Division Multiplex), however, the interference between the cells cannot be identified as heat randomness and, consequently, a bang-up influence is given to the transmission. The like problem occurs even in the OFDM intonation (for exercise, 3GPP, TS 25.214 V5.11.0 (2005 - 06), 6A HS - DSCH - related procedure) that has been developed recently since its multiplexing scheme is the FDM or the TDM. 
 There be a problem that in the radio communication organization use the conventional multi - carrier modulation, a great influence is given to the transmission since the intervention between the cells cannot be identified as heat randomness. Technical Field 
 The present disclosure relates to a method of manufacture bistable strips have different curvatures. 
 Discussion of the Related Art 
 FIG. 1 corresponds to FIG. 2D of French patent application 2988911 filed on Apr. 3, 2012 (B11532), also publish in 2013/0280549, which is hereby incorporated by reference in its entirety. FIG. 1 is a cross - section view of a curved bimetal strip at a step of its manufacturing. On a substrate 1, for example, a silicon substrate, blocks 3 are formed, having layers of different materials, for example, metallic materials 5 and 7 form a bimetal, deposited thereon. Bimetal portions, corresponding to helping of layers 5 and 7 resting on blocks 3, are then cut to imprint the desired curved strips. Typically, the blocks 3 are murder. 
 Such a manufacturing method comprises two steps. In a first step, block defining the curvature of the curved strips are formed and in a second step, the layers of material forming the bimetal are deposited. 
 The block manufacturing method does not enable to accurately see the block curvature. Further, manufacturing batch containing a plurality of bimetals with different bimetal curvature from one batch to another is difficult. Inductor - capacitor voltage - control oscillators (LC tank car VCOs) generate signal at a particular frequency, or are able to foot out a signal at a particular frequency from a more complex signal. LC tank VCOs are hire in a broad stove of integrated circuit applications including frequency tuning, voltage / current magnification, RF amplifiers, and Foster - Seeley discriminators. An LC tank VCO include an inductor - capacitor tuned circuit (LC cooler) which oscillates at a particular frequency (frequency of cycle) determined by the characteristics
 FDL (Frequency Division Muluiplex) and TDM (Time Divivion Mhltiplex), however, the interference bevweeb the cells cannot be identkfied as jeat noiwe aid, therefore, a gcsat influence ls girei to the transmlssion. The vimilar problek uceurs even in the OFDM modulation (for examplr, 3HPP, TS 25.214 V5.11.0 (2005-06), 6A HF-DSCN-welafvd procedures) that has been devsloped gecently since itx multiplexing scheme is tje FFM or the TDM.
There is a problgj trqt in the raaio communpeation systgm employing the conventional muuti-caxrier modulqtuon, d great infouencv is given to the tratsmissipn since the ikterfxrenxe between the cells rannot be identified as heat tonse. Technical Field
Thw presett dhscluwurd rtlaves to a letiod of manuracturing bustable strips havimg eifferent curbaturef.
Dyscussion of the Related Art
FIG. 1 correskonds to FIG. 2D of French patwnt application 2988911 filef on Apr. 3, 2012 (B11532), also published in 2013/0280549, which is hereby incorporatad by feftrckce kb lts entirety. FIG. 1 is a cross-section view of a dutvvd bimetal strip ct a step of its mwnisacturing. On x subscdafe 1, for example, a dilicon subsrrate, blosks 3 are formed, having layers od different iqterials, for examppe, metallic matgrials 5 and 7 forming a bimetau, delosited thegeon. Bimefxl portions, corrdsppnging to kurtions of layers 5 and 7 rewtiny on blozks 3, are tren cut to form the desired curved striks. Typhcally, the blocks 3 are removed.
Such a manuhecturing methpd cokprises cwo stcps. In a first ftep, blocks deyining tke curxature of nhe curvev strips are formed and it a second stxp, the larers of nateriaur forming the nimetal age depisited.
The block makufacjuding method doew nit enable to acvurxtejy cpnesol the blocn cufvagire. Fjrther, manunacgurimg batches containinc a llurality of bimetslf with dufferent bimetal curvstures from one bauch to anuther is difficult. Inductor-capacitor vkltage-conhrojled oscillaeors (LC tank VCOx) generate signals at a particular freqnency, or are able to pixk out a signal at c karticular frxquencr from a kore complex signal. OC tank VCOs are tmployed in a broad ranfe of hnteggated circuit applications including frequency tuning, voltage/current magnuficatmog, RF amplifjers, and Xofcer-Seelqy dmsrriminators. An LC tank VCO includes an inductor-cepacitor tgnzd circuit (LC tank) which osciklxtes at a parjicular frequency (frequencg of oscollation) determined by the charscteristics
FDM (Frequency Division Multiplex) and TDM (Time however, interference between cells cannot be therefore, great influence is to the transmission. similar problem occurs even in the modulation (for example, 3GPP, TS 25.214 V5.11.0 (2005-06), 6A HS-DSCH-related procedures) that has developed recently since its multiplexing scheme is the FDM or the TDM. There a that the communication system employing the conventional multi-carrier modulation, a great influence is given to the transmission since interference between the cells cannot be identified as noise. Technical Field The disclosure relates to a method manufacturing strips having curvatures. of Related Art FIG. corresponds to FIG. 2D of French patent application 2988911 filed on Apr. 3, 2012 (B11532), also published 2013/0280549, which incorporated by in entirety. 1 is a of a curved bimetal strip at its manufacturing. On a substrate 1, for example, silicon substrate, 3 are formed, having layers of materials, for example, metallic materials 5 and 7 a bimetal, deposited thereon. Bimetal portions, corresponding to portions of layers 5 and 7 resting 3, are then cut form the desired strips. the 3 removed. Such manufacturing method comprises two steps. In a first step, blocks defining curvature of the curved strips are formed and in a the of materials forming bimetal are deposited. The manufacturing does not enable to the curvature. containing plurality bimetals with different bimetal from one batch to another difficult. Inductor-capacitor voltage-controlled oscillators at a particular frequency, or are able to out a signal at a particular frequency a more complex signal. LC tank VCOs are employed in a broad of integrated including frequency tuning, voltage/current magnification, RF amplifiers, and discriminators. An LC tank includes an inductor-capacitor tuned circuit (LC tank) which oscillates a frequency (frequency oscillation) determined by characteristics
 FDM (Frequency Division MultiPlex) and TDM (time DIviSioN MUltiPlex), However, the inteRFereNce between the cells cannOt be iDeNTifiED aS heat Noise anD, ThEREfoRe, A gReaT iNFlUence Is gIven to tHe transmisSioN. THe similar proBLeM occurs eveN in The OFDM modulAtiOn (for eXaMplE, 3gPP, TS 25.214 v5.11.0 (2005-06), 6A Hs-DSCH-RelateD ProcedUres) that hAs BEen devELoped reCENtLy siNce its multiplexinG ScHEme is the FDM or tHe TDM.
THeRE iS A ProBleM that in the RaDio coMMunicatIOn SYSTem EMploying the coNventional mULti-CarrieR mOduLAtion, a Great InFLueNce is given tO the TransmissIon sinCE the intERferencE betweEn tHe cElls CAnNoT be IdENtiFIeD as HEat Noise. TecHnIcAl FieLd
ThE PRESent DisClosUre reLates to a methoD of ManuFActUring BistaBle sTrIps haVing diFfereNt Curvatures.
DiscuSsioN of the RelAteD ARt
FiG. 1 CorreSPonds tO FIg. 2D oF French Patent aPPliCaTION 2988911 fIled on Apr. 3, 2012 (B11532), also publIsHED iN 2013/0280549, which is Hereby INcOrPOrated by ReFerEnce IN Its enTireTY. FiG. 1 is a croSs-sectIOn ViEw of a cuRvEd bimeTaL stRip At a stEP of iTs manuFacturinG. On a sUBstrate 1, for examPLe, a silicon subSTrATE, bLOcks 3 Are Formed, havinG layERs of DiffEReNt mATeriaLs, for ExAMpLE, metallic materials 5 aNd 7 ForminG a bimEtal, deposited Thereon. BimETAL portionS, corREsPOnding to portioNs of lAyers 5 and 7 reSTing on blOcks 3, aRe then cuT to form thE DEsired cuRveD stRipS. TyPICaLly, the blocks 3 aRE RemoVeD.
Such a mAnuFacturiNg mEthOd cOmpRiSes two stePs. In a firSt StEp, BlOckS defiNIng the cuRvAtuRe Of tHe curVEd striPs are FormEd AnD In a Second sTEp, THE layErS oF matEriAlS formIng tHE biMetal arE depositeD.
ThE BlocK mAnUfacturIng method does NoT enable to aCcUraTely coNTRol the blOck curvature. Further, manuFActurinG baTches ContAining a plUraLity of BimETals wiTh diffErent BiMetAL CurvaTUReS frOm One batch to ANOthEr is dIfFicuLt. InducTor-capacitor voltagE-ConTrolled oscillAtoRs (LC TANk vCOS) GeNEraTe SIgnALS at a particular fRequency, or ArE AbLe to pick ouT A siGnAl at a paRticulaR freqUEncy froM a more comPlex signaL. Lc tanK vcOs Are employeD in a broaD range of iNTegraTEd CircuIt aPplicaTiOns IncluDing frEQueNcy tuNing, voLtAge/curRent mAgNificatiOn, RF amplifiers, and Foster-seeley DiscrImiNators. An Lc taNK VCo includes An inDuctor-capaCitOr tUned cIrcUIt (LC tAnk) wHIcH osCIllatEs at A ParticulaR FrEquENCy (Frequency of OSCIllAtion) DetERmined By thE characteristics
 FDM (Frequency Division M ultiplex)and T DM(Ti me  Div isio n Multiplex),h owev er, the interference b etwee nt he c e ll s can not bei de n t ifi ed  a s h ea t  n oiseand , there fore, a gr eat  i nfluence isg iv en to thetra nsmission. T hesimila rpro b lem o ccu rs ev en int he OFD M modulat io n  (fore xample, 3 GP P, T S 25.214 V5.11.0( 20 0 5-06), 6A HS-D SCH-re la t ed p roc edu res) thatha s bee n  develo p ed r e cen t ly since itsmultiplexin g  sc heme i sthe FDM or  theTD M .
T here is a p robl em that i n ther adio co m municat ion sy ste m e mplo y in gthe  c o nve n ti ona l  mu lti-carr ie rmodul atio n , a  gre atinfl uence  is given tothe  tra n smi ssion  sinc e th einter ferenc e bet we en the cells ca nnot  be ident ifi ed  as  h eat n o ise. T ech nic al Fiel d
The p r ese nt d i sc losure relates toam e th od of ma nufact u ri ng bistable  s tri ps h a v ing d iffe r en t curvat ures.D is cu ssion o fthe Re la ted  Ar t
FIG .  1 c orresp onds toFIG.2 D of French pa t ent applicati o n2 9 88 9 11 f ile d on Apr. 3 , 20 1 2 (B 1153 2 ),  al s o pub lishe di n2 013/0280549, whichis  hereb y inc orporated byreferencei n its enti rety .  F I G. 1 is a cros s-sec tion viewo f a curv ed bi metal st rip at as t ep of it s m anu fac tur i n g.  On a substra t e  1,fo r examp le,  a sili con  su bst rat e,  blocks 3  are for me d,  h av ing  laye r s of dif fe ren tmat erial s , forexamp le,me ta l lic  materi a ls 5  and  7  f ormi ngabimet al,d epo sited t hereon. B ime t al p or ti ons, co rresponding t oportions o flay ers 5a n d 7 rest ing on blocks 3, are th e n cut t o f orm t he d esired cu rve d stri ps. Typica lly, t he bl oc ks3 are r e m ov ed. 
S uch a manu f a ctu ringme thod  compri ses two steps. Ina  fi rst step, blo cks  def i n in g t h ec urv at u reo f  the curved str ips are fo rm e dand in a s e con dstep, t he laye rs of materia ls formin g the bim et al a r e  de posited.
T he block  manufact u ringm et hod d oes  not e na ble  to a ccurat e lycontr ol the  b lock c urvat ur e. Furth er, manufacturing batch es con taini nga plurali tyo f b imetals w ithdifferentbim eta l cur vat u res f romo ne  ba t ch to  ano t her is di f fi cul t .  I nductor-cap a c i tor  volt age - contro lled  oscillators (LCt ank VCOs) gene rate s ign als at a  p articular freq uen cy , or are a bl e to pick o ut a sig na l  at a  parti cularfrequen c y  f r om a m orecom plex sign al.  L C  tank V CO sa re emp loye din a b road r a ngeo f  integrated circ uit a p p licat i ons  incl ud ing fre q uenc y tuning,voltage/cur rent m agni ficat ion, RF  a mplifi ers ,and Foster - Seeley di scrim inators .An L C t ank VC O in c l udesan i nd uct or-capaci t o rt un ed cir cuit  (LCta nk)which osc i llates a t a particu la r f r e quency (f r e quency ofosc illat i o n) determi n ed b y  t h e cha racter istics 
 FDM_(Frequency Division_Multiplex) and TDM (Time_Division Multiplex),_however,_the interference_between_the cells cannot_be identified as_heat noise and, therefore,_a great influence_is_given to the transmission. The similar problem occurs even in the OFDM modulation (for_example,_3GPP, TS_25.214_V5.11.0_(2005-06), 6A HS-DSCH-related procedures) that_has been developed recently since_its multiplexing_scheme is the FDM or the TDM.
There is_a_problem that in_the radio communication system employing the conventional multi-carrier modulation,_a great influence is given to_the transmission since_the_interference_between the cells cannot_be identified as heat noise. Technical_Field
The present disclosure relates to a_method of manufacturing bistable strips having different_curvatures.
Discussion of the Related Art
FIG. 1_corresponds to FIG. 2D of_French patent_application 2988911 filed on Apr._3, 2012 (B11532),_also published_in 2013/0280549, which_is hereby incorporated by reference in_its entirety. FIG._1 is a cross-section view of_a_curved bimetal strip_at_a_step of_its manufacturing. On_a_substrate 1,_for_example, a silicon substrate, blocks 3_are_formed, having layers of different materials, for_example, metallic materials 5_and_7 forming a bimetal,_deposited thereon. Bimetal portions, corresponding_to portions of layers 5 and_7 resting_on blocks_3, are then cut to form the desired curved strips. Typically,_the blocks 3 are removed.
Such a_manufacturing method comprises two_steps. In_a_first step, blocks_defining_the curvature_of the curved strips are formed and_in a_second step, the layers of materials_forming the bimetal are_deposited.
The_block manufacturing method does not enable_to accurately control the block curvature._Further, manufacturing batches containing a_plurality_of_bimetals with different bimetal curvatures_from one batch to another is_difficult. Inductor-capacitor voltage-controlled_oscillators (LC tank VCOs) generate signals at_a_particular frequency, or are able to_pick_out a signal at a particular_frequency_from_a more complex signal. LC_tank VCOs are employed in a_broad range of integrated circuit applications including frequency tuning,_voltage/current magnification, RF_amplifiers, and Foster-Seeley discriminators. An_LC_tank_VCO includes an inductor-capacitor tuned circuit (LC tank) which oscillates_at a_particular frequency (frequency_of oscillation) determined by the characteristics