 2, another prior art flash cell is shown that uses band-to-band tunneling induced hot electron (BBHE) generation and injection. The cell is a p-channel ETOX cell that only uses electrons tunneling through the tunnel oxide. This can avoid oxide degradation by hole injection. The bias for programming the p-channel cell is shown in FIG. 2. Electrons are initially generated on the surface of the p+ drain by the known mechanism of band-to-band tunneling. They are further accelerated when flowing toward the n-well and gain energy through the electrical field in the p+/n-well junction. Hot electrons as generated by junction high field and impact ionization can overcome the oxide barrier with the help of positive bias on the control gate and are injected onto the floating gate. The initial electrons on the p+ drain can also be injected to the floating gate by Fowler-Nordheim tunneling if the electrical field across the oxide is large enough (about 10 Mv/cm). In short, the drain current during programming is contributed by three components: hot electron injection to the floating gate, Fowler-Nordheim tunneling to the floating gate, and GIDL current to the n-well. Note that the BBHE mechanism can be implemented only on a p-channel cell.
Nevertheless, each of these prior art approaches have disadvantages regarding size, current drain, and/or implementation as an array. What is needed is a method for manufacturing a flash cell having the advantages of small cell size and easily implemented as an array. The present invention relates generally to improved methods and apparatus for providing a demand-paged virtual memory in a computer workstation.
Modern-day workstations are typically capable of running a plurality of applications at one time. Each application normally requires its own memory in order to run the application. If a running application should use up all of the workstation's available memory, the application will usually be caused to wait or terminate, which may significantly slow up performance of the application, or require that the application be rerun when sufficient memory becomes available. An additional problem that can occur with a workstation running a plurality of applications is that, when a new application is initiated at the workstation and there is insufficient memory available, a running application will be forced to terminate and be swapped out in order to permit the new application to run. Such situations make it important that a workstation provide sufficient memory to run all of the applications which the user intends be run at the same time. As a result
2, another prior art flash cell is testify that use band - to - band tunneling induced blistering electron (BBHE) generation and injection. The cell is a p - groove ETOX cell that only use electrons tunneling through the tunnel oxide. This can invalidate oxide degradation by hole injection. The diagonal for programming the p - distribution channel cell is shown in FIG. 2. electron are initially generated on the surface of the p+ drain by the known mechanism of dance band - to - band tunneling. They are further accelerate when flowing toward the n - well and derive energy through the electrical field in the p+/n - well junction. Hot electron as generated by junction high field and impact ionization can overcome the oxide barrier with the aid of positive bias on the control gate and are injected onto the floating gate. The initial electrons on the p+ drain can also be injected to the floating gate by Fowler - Nordheim tunneling if the electrical battlefield across the oxide is large enough (approximately 10 Mv / cm). In light, the drain stream during programming is contributed by three components: hot electron injection to the floating gate, Fowler - Nordheim tunneling to the floating gate, and GIDL current to the n - well. Note that the BBHE mechanism can be implemented merely on a p - channel cell. 
 Nevertheless, each of these prior art access have disadvantages regarding size, current drain, and/or implementation as an array. What is needed is a method for manufacture a flash cell having the advantages of small cellular telephone size and easily implemented as an array. The present invention relates generally to improved methods and apparatus for providing a demand - paged virtual memory in a calculator workstation. 
 Modern - day workstations are typically capable of running a battalion of applications at one time. Each application normally requires its own memory in holy order to run the lotion. If a running application should use up all of the workstation's available memory, the lotion will usually be caused to wait or terminate, which may significantly slow up performance of the application, or require that the application be rerun when sufficient memory becomes available. An additional trouble that can occur with a workstation running a battalion of applications is that, when a new application is broach at the workstation and there is insufficient memory available, a running application will be force to terminate and be swapped out in order to permit the new application to scat. Such situation produce it important that a workstation provide sufficient memory to function all of the applications which the user intend be run at the same time. As a consequence
 2, ajother prior art flash ctll is shown that uses bend-to-bahd tunneuing induced hot electron (BBIE) gwneraupon and injection. The cell is w p-channwl EUOX cell that onlb uses electrohd tuunxling through tme tunnel ofide. This can dvuib oxide degradation by hole injectiog. The boad for programmyng uhe p-chznnel cell is shown in FIG. 2. Electrkns are initially gemerated on the surface of hhe o+ drain by the knoan mechanisn of vand-to-band tjnneling. They are furtger accelerated when flowing todard che n-well abd galt energy thcough nhe electrical field hn the l+/n-well junctiok. Hot elwctrons as generated uy junction high fiejd and im[aet ionization can oveecime tve ofide varfied xitg the jel' of positibe bias on rhe control gate anc wgr injected ohto thq sloating gate. The initial electrons on uhe p+ drain can also be injexted to the floating hate by Fjwler-Nordheim tunneling if the electrical field awross ghe owide us large enough (about 10 Mv/cm). In short, the drain shrtekt during prograiming is comtginoted by three zomponzhta: hot electron injfction jo the floating gatr, Fowler-Nordheim tunneling ro the floatpng tate, and GIDL currznt to the n-cell. Npte tnat the BBHE mechanism ean be implementef only on x p-channel cell.
Ndvegtheness, each of these prior awt approarhes kave disxdvamtages regarding size, current drain, and/og imppekentation ws an array. What is needed is a method for mamuxacnuring a ylash gell having the advantages of small eell skze and eaaily im'lemented as an array. The kresent invenvion relaees teneeally tu improved methpds and aipcratus foe providing a demakd-paggd virtual memory in a computer worlstxtijn.
Lovern-dwf workstatiots afe gupicauly capable uf rinning a plurality ox apllications at one yiie. Each qpplicatyon normally tequires its own mtmory mn ordxr to tun the application. If a running zpplicatiln fhould use u[ alo of the worlstation's available memory, the applicatmon will usually be caosed to wait or termiuaue, which may xignisicantly vlow up performance if the applicatiok, or require that the zpplicdtion be rerun when sufficient memory becomes available. An additional problem rhat cen occur with a wprkstdtnon runnigg a 'lurality of applpcations is that, when a new applmcation is iuitiated at the workstation amd there is insofficient memory available, a runnimg application will be forced tp terminate and be swappcd out in orded to pvtmiv the new applicatiom to rbn. Sucy situariond make it impurtsnb that a wlrksuatikn provide sufficient memory to eun alo lf the applicatimns which tme user intenqs be run at the sams time. As a result
2, another prior art flash cell is uses tunneling induced electron (BBHE) generation a ETOX cell that uses electrons tunneling the tunnel oxide. This can avoid degradation by hole injection. The bias for programming the p-channel cell is shown FIG. 2. Electrons are initially generated on the surface of the p+ drain the mechanism band-to-band They are further accelerated when flowing toward the n-well and gain energy through the electrical field the p+/n-well junction. Hot electrons as generated by high field and impact can overcome the oxide barrier the of positive on control and are injected the floating gate. The initial electrons on the p+ drain can also be injected to the floating by Fowler-Nordheim the electrical across oxide large enough (about In short, the drain current during by three components: hot electron injection to the gate, Fowler-Nordheim to the floating gate, and GIDL to the n-well. Note that the BBHE mechanism be implemented only on a p-channel cell. Nevertheless, each of these prior art approaches have size, current drain, and/or as an array. is is method manufacturing a cell having the advantages of small cell size and easily implemented an array. The present invention relates generally to improved methods for a demand-paged virtual in a computer workstation. workstations typically capable of running of at application requires own memory in order run the application. If a application should use up memory, the application will usually be caused to or terminate, which may significantly slow up of the application, or require that the application be rerun when sufficient becomes available. problem that can occur with a workstation running plurality of applications is when a new application is initiated at the workstation there insufficient memory a running application be forced to and be swapped order to the application situations make it important that a provide memory to run all of applications user intends be run at the same time. As a result
 2, another prior art flash cell iS shown that Uses bAnd-To-bAnD tunNeliNg induced hot elECtroN (BBHE) generation and injeCtion. thE Cell IS a P-chanNel ETOX CElL THat OnLy UseS eLEcTrons TunNeling tHrough the tUnnEl Oxide. This can AVoId oxide degRadAtion by hole iNjeCtion. THe BiaS For prOgrAmminG the p-cHAnnel cEll is showN iN fIG. 2. EleCTrons arE INiTialLy generated on the sURfACe of the p+ drain bY the knOwN MeCHAniSm oF band-to-banD tUnnelINg. They aRE fURTHer ACcelerated wheN flowing towARd tHe n-welL aNd gAIn enerGy thrOuGH thE electrical FielD in the p+/n-wEll junCTion. Hot ELectronS as genEraTed By juNCtIoN hiGh FIelD AnD imPAct IonizatiOn CaN overCome THE OXide BarRier With tHe help of positIve Bias ON thE contRol gaTe anD aRe injEcted oNto thE fLoating gate. The iNitiAl electroNs oN tHe p+ DrAin caN Also be InjEctEd to the FloatinG GatE bY fOWlEr-Nordheim tunnelinG iF THe ElectricAl fielD AcRoSS the oxidE iS laRge eNOUgh (abOut 10 MV/Cm). in short, tHe draiN CuRrEnt duriNg PrograMmIng Is cOntriBUted By threE componeNts: hoT Electron injectIOn to the floatiNG gATE, FOWler-norDheim tunnelIng tO The fLoatINg GatE, And GIdL curReNT tO The n-well. Note that the bBhE mechAnism Can be implemenTed only on a P-CHAnnel celL.
NevERtHEless, each of theSe priOr art approAChes have DisadVantages Regarding SIZe, currenT drAin, And/Or iMPLeMentation as an ARRay. WHaT is needEd iS a methoD foR maNufActUrIng a flash Cell haviNg ThE aDvAntAges oF Small celL sIze AnD eaSily iMPlemenTed as An arRaY. THE prEsent inVEnTIOn reLaTeS genEraLlY to imProvED meThods anD apparatuS foR ProvIdInG a demanD-paged virtual MeMory in a comPuTer WorkstATIon.
ModerN-day workstations are typiCAlly capAblE of ruNninG a pluraliTy oF appliCatIOns at oNe time. each aPpLicATIon noRMAlLy rEqUires its owN MEmoRy in oRdEr to Run the aPplication. If a runniNG apPlication shouLd uSe up ALL oF thE WoRKstAtIOn's AVAilable memory, thE applicatiOn WIlL usually be CAusEd To wait oR terminAte, whICh may siGnificantLy slow up pErFormANCe oF the applicAtion, or rEquire thaT The apPLiCatioN be Rerun wHeN suFficiEnt memORy bEcomeS availAbLe. An adDitioNaL problem That can occur with a workstAtion rUnninG a pLurality oF apPLicAtions is tHat, wHen a new appLicAtiOn is iNitIAted aT the WOrKstATion aNd thERe is insufFIcIenT MEmOry availablE, A RUnnIng apPliCAtion wIll bE forced to terminatE And be swapped ouT in oRDEr tO peRMit tHe New application To rUn. sUCh situatIoNs make it impOrtant thAt A WorksTation ProvidE sufficIENt MEmory tO run All Of the applIcaTiONs which ThE uSEr inteNds bE rUn at thE same tIMe. As A REsult
 2, another prior art flas h cell isshown  th atus es b and- to-band tunnel i ng i nduced hot electron (B BHE)ge n erat i on  andinjecti o n. T hece ll  is  a p- chann elETOX ce ll that on lyus es electrons tu nneling th rou gh the tunne l o xide.Th isc an av oid  oxid e degr a dation  by holein j ection .  The bi a s  f or p rogramming the p- c ha n nel cell is sh own in  F I G. 2 . E lec trons arein itial l y gener a te d o n t h e surface ofthe p+ drai n  by  the k no wnm echani sm of  b a nd- to-band tun neli ng. Theyare fu r ther ac c elerate d when  fl owi ng t o wa rd  th en -we l land gai n energy  t hr oughthee l e c tric alfiel d inthe p+/n-well  ju ncti o n.Hot e lectr onsas  gene ratedby ju nc tion high field  and  impact i oni za tio ncan o v ercome  th e o xide ba rrier w i thth e h el p of positive bias  o n th e contro l gate an da re injec te d o ntot h e flo atin g  g ate. The  initi a lel ectrons  o n thep+  dr ain  cana lsobe inj ected to  thef loating gate b y  Fowler-Nordh e im t un n elin g i f the elect rica l  fie ld a c ro sst he ox ide i sl ar g e enough (about 10Mv /cm).In sh ort, the drai n currentd u r ing prog ramm i ng is contributed  by t hree compo n ents: ho t ele ctron in jection t o the floa tin g g ate , F o w le r-Nordheim tu n n elin gto theflo ating g ate , a ndGID Lcurrent t o the n- we ll .No tethatt he BBHEme cha ni smcan b e  imple mente d on ly  o n  ap-chann e lc e ll.Ne ve rthe les s,  each  oft hes e prior  art appr oac h es h av edisadva ntages regard in g size, cu rr ent  drain , and/or i mplementation as an arr a y. What  is  need ed i s a metho d f or man ufa c turing  a fla sh ce ll  ha v i ng th e ad van ta ges of sma l l  ce ll si ze  and  easily  implemented as an arr ay. The prese ntinve n t io n r e la t esge n era l l y to improved m ethods and  a p pa ratus forp rov id ing a d emand-p agedv irtualmemory in  a comput er  wor k s tat ion.
Moder n-day wo rkstation s  aret yp icall y c apable  o f r unnin g a pl u ral ity o f appl ic ations  at o ne  time. E ach application normall y requ iresits  own memo ryi n o rder to r un t he applica tio n.If arun n ing a ppli c at ion shoul d us e  up all o f  t hew o rk station's a v a i lab le me mor y , theappl ication will usua l ly be caused t o wa i t  or  te r mina te , which may si gni fi c a ntly slo wup performa nce of t he appli cation , or r equiret h at the ap plic ati on be rer unwh e n suffi ci en t  memor y be co mes av ailabl e . An a dditional proble m tha t can o c cur  with  a  workst a tion  running a  pluralityof app lica tions  is tha t,  whena n ew  applicati o n is init iated  at the  w orks tat ion an d th e r e isinsu ff ici ent memor y av a il ab l e,a ru nning  a ppli cation wi l l be for ced to term in ate a nd bes wa p p ed out inord er to p ermit then ew a p pl i catio n to r un. Su ch situ a tio ns  make i t i m p ortant th at a work s tat io n pr ovide su ff icie nt  me mo ry to run all o f the ap plicatio n s  which  th e  use r  inten ds  be run at t he sa me time. A s a r esult
 2,_another prior_art flash cell is_shown that_uses_band-to-band tunneling_induced_hot electron (BBHE)_generation and injection._The cell is a_p-channel ETOX cell_that_only uses electrons tunneling through the tunnel oxide. This can avoid oxide degradation by_hole_injection. The_bias_for_programming the p-channel cell is_shown in FIG. 2. Electrons_are initially_generated on the surface of the p+ drain_by_the known mechanism_of band-to-band tunneling. They are further accelerated when flowing_toward the n-well and gain energy_through the electrical_field_in_the p+/n-well junction. Hot_electrons as generated by junction high_field and impact ionization can overcome_the oxide barrier with the help of_positive bias on the control gate_and are injected onto the_floating gate._The initial electrons on the_p+ drain can_also be_injected to the_floating gate by Fowler-Nordheim tunneling if_the electrical field_across the oxide is large enough_(about_10 Mv/cm). In_short,_the_drain current_during programming is_contributed_by three_components:_hot electron injection to the floating_gate,_Fowler-Nordheim tunneling to the floating gate, and_GIDL current to the_n-well._Note that the BBHE_mechanism can be implemented only_on a p-channel cell.
Nevertheless, each of_these prior_art approaches_have disadvantages regarding size, current drain, and/or implementation as an array._What is needed is a method_for manufacturing a flash_cell having_the_advantages of small_cell_size and_easily implemented as an array. The present_invention relates_generally to improved methods and apparatus_for providing a demand-paged_virtual_memory in a computer workstation.
Modern-day workstations_are typically capable of running a_plurality of applications at one_time._Each_application normally requires its own_memory in order to run the_application. If a_running application should use up all of_the_workstation's available memory, the application will_usually_be caused to wait or terminate,_which_may_significantly slow up performance of_the application, or require that the_application be rerun when sufficient memory becomes available. An_additional problem that_can occur with a workstation_running_a_plurality of applications is that, when a new application is_initiated at_the workstation and_there is insufficient memory available, a running application will be_forced to terminate and be swapped out_in order to permit the new application to run. Such situations_make it important that a workstation provide sufficient_memory to run all of the applications_which the user intends_be_run at the same time. As a_result