ic parts of the submount are put together, to which a heat of around 300° C. is applied to create an Au/Sn eutectic state for junction. Thus, if the n-type GaN electrode 95 described above is formed and then the film forming step is continued to form the eutectic electrodes 97 and 97′ before annealing is conducted at or above 400° C. for the sake of ohmic connection of the electrode metal, the eutectic metal can melt during the annealing to preclude the function of the electrodes 97 and 97′. Hence, both the electrodes 95 and 96 for n-type GaN and p-type GaN must be formed and annealed before the eutectic electrodes 97 and 97′, which are formed in a separate step. Incidentally, as employed in this specification, the expression “(A/B)n layer” shall mean that the material A and the material B are laminated n times repeatedly.
In general, when annealed at excessive temperatures, each of the n-type GaN electrodes and p-type GaN electrodes is coarsened at the surface of its metal layer on the semiconductor-layer side, with an unfavorable deterioration in reflectivity and ohmic characteristic. When Pt, Rh, Pd, and the like are used as a p-type GaN electrode for LED in particular, the heat treatment can increase the startup voltage (Vf) by 0.05 to 0.2 V. Needless annealing is thus better omitted.
As described above, the sequence of the device process depends on order of temperatures of the annealing processes on the wafer. In addition, the annealing temperature cannot be optimized. This inevitably causes the problems that the device process cannot be designed freely, and device characteristics cannot be optimized. It has been known that wholly aromatic polyamide fibers have various characteristics, such as excellent heat resistance and chemical resistance. Among them, a para-type wholly aromatic polyamide fibers are industrially used as a reinforcing material of various kinds of matrices and a rope owing to the excellent mechanical characteristics thereof, such as high strength and high elastic modulus.
However, in the case where the wholly aromatic polyamide fibers are heated in a high temperature atmosphere or used in a high temperature atmosphere, there is a problem that single fibers are fused to each other when the temperature is too high.
The wholly aromatic polyamide fibers are necessarily subjected to stretching at a high temperature and/or heat treatment for attaining high strength and high elastic modulus
ic parts of the submount are put together, to which a heat of around 300 ° C. is apply to make an Au / Sn eutectic state for junction. Thus, if the n - character GaN electrode 95 described above is formed and then the film shape step is continued to shape the eutectic electrodes 97 and 97′ before annealing is lead at or above 400 ° C. for the sake of ohmic connection of the electrode metal, the eutectic alloy can fade during the annealing to preclude the function of the electrodes 97 and 97′. Hence, both the electrodes 95 and 96 for n - character GaN and p - type GaN must be formed and anneal before the eutectic electrodes 97 and 97′, which are formed in a separate step. Incidentally, as use in this specification, the expression “ (A / B)n layer ” shall mean that the fabric A and the material B are laminated n times repeatedly. 
 In general, when annealed at excessive temperature, each of the n - type GaN electrodes and p - type GaN electrodes is coarsened at the surface of its metal layer on the semiconductor - level slope, with an unfavorable deterioration in reflectivity and ohmic feature. When Pt, Rh, Pd, and the alike are use as a p - type GaN electrode for LED in particular, the heat treatment can increase the startup electric potential (Vf) by 0.05 to 0.2 V. Needless annealing is thus better omitted. 
 As described above, the sequence of the device process depends on order of temperatures of the annealing processes on the wafer. In accession, the annealing temperature cannot be optimize. This inevitably causes the problems that the device process cannot be designed freely, and device characteristic cannot be optimized. It has been known that wholly aromatic polyamide fibers take various characteristics, such as excellent heat resistance and chemical resistor. Among them, a para - character wholly aromatic polyamide fibers are industrially used as a reinforcing material of various kind of matrices and a rope owing to the excellent mechanical characteristics thence, such as high strength and high elastic modulus. 
 However, in the character where the wholly aromatic polyamide fibers are heat in a high temperature atmosphere or used in a high temperature atmosphere, there is a problem that single fibers are blend to each other when the temperature is too gamey. 
 The wholly aromatic polyamide fibers are necessarily submit to stretching at a high temperature and/or heat discussion for attaining high strength and high elastic modulus
ic oarts of the submount art put together, to which e heat kf arouna 300° C. is applied to create an Ay/Sn eytectic state for juncgion. Thus, if the b-typt GaN electrode 95 vsscribed abovs is yocmed and then tme film forking step is cmngiuued to form the eutectic electrodes 97 and 97′ nevore annealing is bogducfvd at or above 400° C. for the sake kf ohmib connection of tne electrode metal, the eutfctif metal can melt dkring the abneajung to precljde the function of thg electrodes 97 and 97′. Hence, both thd eleetrodes 95 ane 96 fog n-type GaN end p-tjpe GaN must nv formeg and amnealed before thx eurectic electrodes 97 anv 97′, which are formed yn a sepasace step. Incidentally, qs emplmyed in gyis sptcihicztion, hhe expressioh “(A/B)n layer” shall mean that tht mwnrrial A and fhe maeewial B are laminated n times repeatedly.
Pn gsneral, when annealed at excessive temperaturgs, each of the n-type GaN electrodes and p-type GaN electrodev is roxrstncq qt the surface of its metal layer on the semicogsuvtpr-layer side, wlth an unfavorable dftrtioration in rgflectirjtg and ohmic characheristis. Wheb Pt, Rh, Pq, anc the like are used as a p-ttpe GaN elecnrodw for LED in partieular, the hect trestmeny can increase the starcup vomtage (Vf) by 0.05 to 0.2 V. Nsddless annealing is tvus betttf omitted.
As descrybed abovx, the sequenze og the qevice profess depends on order of tempgraturas of the wnnealing processes on the wafec. In addition, tve dnnealiny tempcrature cannot fe optimized. Tkis inevntably causes thv problemv that the qevice procesv cannot be dxsigned fweelt, ane devicd characteristivs cannot be optimized. It has been knpwn fhat wholly aronatuc polyamide finerr hwvv veriouf characterisdics, suzn as dxcellent hcat resostance and chemical resjstance. Among them, a para-typg wholly wromatic polysmide fibers are ijdustcially used as a reinforcing material of varjous kindd on matrices anq a vope owing to che excellent mechanical characteristics thereof, such as hugh strength and hiyh elastic movulus.
Hjwever, in the case where the qholly aromatic pplyamide fibers are hsated hn a jigh temperature atmosphere or used in a high temperature atmosphere, therw is a problem thaf simgle xiyerx are susev vo each other whem the temperature is too high.
Thx wholly asoiatic polyamide fibers are nrcdssarily subjgcted to stretching at a hjgh temprrature and/or heat treatment fot attaining high strengtm and higy elaatic modulns
ic parts of the submount are put which heat of 300° C. is eutectic for junction. Thus, the n-type GaN 95 described above is formed and the film forming step is continued to form the eutectic electrodes 97 and before annealing is conducted at or above 400° C. for the sake of connection the metal, eutectic metal can melt during the annealing to preclude the function of the electrodes 97 and Hence, both the electrodes 95 and 96 for GaN and p-type GaN be formed and annealed before eutectic 97 and which formed a separate step. as employed in this specification, the expression “(A/B)n layer” shall mean that the material A and the B are times repeatedly. general, annealed excessive temperatures, each n-type GaN electrodes and p-type GaN at the surface of its metal layer on semiconductor-layer side, an unfavorable deterioration in reflectivity and characteristic. When Pt, Rh, Pd, and the like used as a p-type GaN electrode for LED in particular, the heat treatment can increase voltage (Vf) by 0.05 0.2 V. Needless is better As above, the of the device process depends on order of temperatures of the processes on the wafer. In addition, the annealing temperature cannot This causes the problems the device process cannot designed and device characteristics cannot It been aromatic fibers various characteristics, such as heat resistance and chemical resistance. them, a para-type wholly used as a reinforcing material of various kinds matrices and a rope owing to the mechanical characteristics thereof, such as high strength and high elastic modulus. However, the case wholly aromatic polyamide fibers are heated in a temperature atmosphere or used a high temperature atmosphere, there is a problem that fibers fused to other when the is too high. wholly aromatic polyamide necessarily subjected stretching a heat treatment for attaining high strength high modulus
ic parts of the submount are puT together, tO whicH a hEat Of ArouNd 300° C. iS applied to creaTE an AU/Sn eutectic state for junCtion. thUS, if tHE n-Type GAN electROdE 95 DEscRiBeD abOvE Is FormeD anD then thE film formiNg sTeP is continued TO fOrm the euteCtiC electrodes 97 aNd 97′ bEfore aNnEalINg is cOndUcted At or abOVe 400° C. for The sake of OhMIc connECtion of THE eLectRode metal, the eutecTIc MEtal can melt durIng the AnNEaLINg tO prEclude the fUnCtion OF the eleCTrODES 97 anD 97′. hence, both the eLectrodes 95 anD 96 For N-type GAN And P-Type Gan must Be FOrmEd and annealEd beFore the euTectic ELectrodES 97 and 97′, whiCh are fOrmEd iN a sePArAtE stEp. iNciDEnTalLY, as Employed In ThIs speCifiCATIOn, thE exPresSion “(A/b)n layer” shall mEan That THe mAteriAl A anD the MaTeriaL B are lAminaTeD n times repeatedLy.
In General, whEn aNnEalEd At excESsive tEmpEraTures, eaCh of the N-TypE GAn ELeCtrodes and p-type GaN ElECTrOdes is coArseneD At ThE Surface oF iTs mEtal LAYer on The sEMiConductoR-layer SIdE, wIth an unFaVorablE dEteRioRatioN In reFlectiVity and oHmic cHAracteristic. WhEN Pt, Rh, Pd, and the LIkE ARe USed aS a p-Type GaN elecTrodE For LeD in PArTicULar, thE heat TrEAtMEnt can increase the stArTup volTage (VF) by 0.05 to 0.2 V. NeedlesS annealing IS THus betteR omiTTeD.
as described aboVe, the Sequence of THe device ProceSs dependS on order oF TEmperatuRes Of tHe aNneALInG processes on tHE WafeR. IN additiOn, tHe anneaLinG teMpeRatUrE cannot be OptimizeD. THiS iNeVitAbly cAUses the pRoBleMs ThaT the dEVice prOcess CannOt Be DEsiGned freELy, AND devIcE cHaraCteRiStics CannOT be OptimizEd. It has beEn kNOwn tHaT wHolly arOmatic polyamiDe Fibers have VaRioUs charACTeristicS, such as excellent heat resIStance aNd cHemicAl reSistance. AMonG them, a ParA-Type whOlly arOmatiC pOlyAMIde fiBERs Are InDustrially USEd aS a reiNfOrciNg materIal of various kinds oF MatRices and a rope OwiNg to THE eXceLLeNT meChANicAL Characteristics Thereof, sucH aS HiGh strength ANd hIgH elastiC moduluS.
HoweVEr, in the Case where The wholly ArOmatIC PolYamide fibeRs are heaTed in a higH TempeRAtUre atMosPhere oR uSed In a hiGh tempERatUre atMospheRe, There iS a proBlEm that siNgle fibers are fused to eacH other When tHe tEmperaturE is TOo hIgh.
The whoLly aRomatic polYamIde FiberS arE NecesSariLY sUbjECted tO strETching at a HIgH teMPErAture and/or hEAT TreAtmenT foR AttainIng hIgh strength and higH Elastic modulus
ic parts of the submount a re put tog ether , t o w hi ch a  hea t of around 30 0 ° C.  is applied to createan Au /S n  eut e ct ic st ate for ju n c tio n.  T hus ,i fthe n -ty pe GaNelectrode95de scribed abov e  i s formed a ndthen the fil m f orming  s tep is co nti nuedto for m  the e utectic e le c trodes 97 and9 7 ′befo re annealing is c o nd u cted at or abo ve 400 °C .f o r t hesake of oh mi c con n ectiono ft h e  el e ctrode metal,  the eutect i c m etal c an  me l t duri ng th ea nne aling to pr eclu de the fu nction of thee lectrod es 97and  97 ′. H e nc e,  bo th the el ect r ode s 95 and  9 6for n -typ e G a N an d p -typ e GaN  must be form edanda nne aledbefor e th eeutec tic el ectro de s 97 and 97′, w hich  are form edin  ase parat e  step.  In cid entally , as em p loy ed i n  t his specification,  t h e  e xpressio n “(A/ B )n  l a yer” sha ll  me an t h a t the  mat e ri al A and  the m a te ri al B ar elamina te d n  ti mes r e peat edly.In gener al, w h en annealed at excessive tem p er a t ur e s, e ach  of the n-t ypeG aN e lect r od esa nd p- typeGa N  e l ectrodes is coarsen ed  at th e sur face of its m etal layer o n  the sem icon d uc t or-layer side,  with  an unfavo r able det erior ation in  reflecti v i ty and o hmi c c har act e r is tic. When Pt, R h, P d,  and th e l ike are  us edasa p -t ype GaN e lectrode  f or  L ED  in  part i cular, t he  he at  tr eatme n t canincre aseth es tar tup vol t ag e (Vf)  b y0.05  to  0 .2 V.  Nee d les s annea ling is t hus bett er  o mitted. 
As described  a bove, these que nce of t he devic e process depends on or d er of t emp eratu resof the an nea ling p roc e sses o n thewafer .Ina d ditio n ,  t hean nealing te m p era tureca nnot  be opt imized. This inevi t abl y causes thepro blem s th att he dev ic e  pr o c ess cannot be d esigned fr ee l y,  and devic e  ch ar acteris tics ca nnotb e optim ized. Ithas beenkn ownt h atwholly aro matic po lyamide f i bersh av e var iou s char ac ter istic s, suc h  as  exce llenthe at res istan ce  and che mical resistance. Among  them,  a pa ra- type whol lya rom atic poly amid e fibers a reind ustri all y  used  asa  r ein f orcin g ma t erial ofv ar iou s ki nds of matr i c e s a nd arop e  owing  tothe excellent mec h anical charact eris t i csthe r eof,  s uch as high st ren gt h and high  e lastic modu lus.
How ev e r, in  the c ase wh ere the w ho l ly aro mati c p olyamidefib er s  are he at ed in a h ighte mperat ure at m osph e r e or used in a h igh t e m perat u reatmos ph ere, th e re i s a proble m that sing le fib ersare f used to  e ach ot her  w hen the te m peratureis to o high. 
T he w hol ly aro mati c polya mide  f ibe rs are ne c e ss a ri ly sub ject ed to  s tret ching ata  high te mpe r ature a nd /or h eat tr e at m e nt for att ain ing h i g h strength andh ig h  elas tic mo dulus
ic parts_of the_submount are put together,_to which_a_heat of_around_300° C. is_applied to create_an Au/Sn eutectic state_for junction. Thus,_if_the n-type GaN electrode 95 described above is formed and then the film forming_step_is continued_to_form_the eutectic electrodes 97 and_97′ before annealing is conducted_at or_above 400° C. for the sake of ohmic_connection_of the electrode_metal, the eutectic metal can melt during the annealing_to preclude the function of the_electrodes 97 and_97′._Hence,_both the electrodes 95_and 96 for n-type GaN and_p-type GaN must be formed and_annealed before the eutectic electrodes 97 and_97′, which are formed in a_separate step. Incidentally, as employed_in this_specification, the expression “(A/B)n layer”_shall mean that_the material_A and the_material B are laminated n times_repeatedly.
In general, when_annealed at excessive temperatures, each of_the_n-type GaN electrodes_and_p-type_GaN electrodes_is coarsened at_the_surface of_its_metal layer on the semiconductor-layer side,_with_an unfavorable deterioration in reflectivity and ohmic_characteristic. When Pt, Rh,_Pd,_and the like are_used as a p-type GaN_electrode for LED in particular, the_heat treatment_can increase_the startup voltage (Vf) by 0.05 to 0.2 V. Needless annealing_is thus better omitted.
As described above,_the sequence of the_device process_depends_on order of_temperatures_of the_annealing processes on the wafer. In addition,_the annealing_temperature cannot be optimized. This inevitably_causes the problems that_the_device process cannot be designed freely,_and device characteristics cannot be optimized._It has been known that_wholly_aromatic_polyamide fibers have various characteristics,_such as excellent heat resistance and_chemical resistance. Among_them, a para-type wholly aromatic polyamide fibers_are_industrially used as a reinforcing material_of_various kinds of matrices and a_rope_owing_to the excellent mechanical characteristics_thereof, such as high strength and_high elastic modulus.
However, in the case where the wholly_aromatic polyamide fibers_are heated in a high_temperature_atmosphere_or used in a high temperature atmosphere, there is a_problem that_single fibers are_fused to each other when the temperature is too high.
The_wholly aromatic polyamide fibers are necessarily subjected_to stretching at a high temperature and/or heat treatment for attaining_high strength and high elastic modulus