, may require at least hundreds of megabytes (MB) of data storage built into or attachable to the camera. To provide for this type of data storage application, future storage memories should be relatively low in cost, extremely compact and have sufficient capacities of around 100 MB to one gigabyte (GB). The storage memory should also be low in power consumption, less than one watt, and have relatively rugged physical characteristics to cope with the portable battery powered operating environment.
For archival storage, data need only be written to the memory once. Preferably the memory should have a short access time, in the order of milliseconds, and a moderate transfer rate, such as 2 MB per second. Preferably, the storage memory should be able to be capable of interfacing with a wide variety of industry standard platforms and modules.
One application for meeting this demand involves the use of write-once cross point memory devices. In cross point memory arrays, a matrix of memory elements are formed, each comprising a fuse or anti-fuse and a diode connected in series. The memory elements are formed by a plurality of semiconductor and insulation layers disposed between orthogonal conductive lines or electrodes.
One application for utilizing write-once cross point memory arrays to provide high density archival storage in portable devices is described in co-pending U.S. patent application No. 09/875,356, filed Jun. 5, 2001, entitled xe2x80x9cWrite-Once Memoryxe2x80x9d, the disclosure of which is incorporated herein by reference. The memory system disclosed therein, referred to as portable inexpensive rugged memory (PIRM), provides high capacity write-once memory at low cost for archival storage. This result is realized in part by avoiding silicon substrates, minimizing process complexity and lowering areal density. The memory system includes a memory module formed of a laminated stack of integrated circuit layers constructed on thin-film plastic substrates. Each layer contains a cross-point diode memory array, and sensing of the data stored in the array is carried out from a separate integrated circuit remotely from the memory module.
Because PIRM memory is relatively inexpensive, users will likely acquire a large number of PIRM modules with a variety of stored content. It is important to be able to fabricate and assemble memory modules in straightforward and relatively inexpensive processes that minimize the need for precision while maximizing information storage density and simplifying addressing, reading and writing functions.
The probable lowest cost method of implementation of the PIRM memory
, may require at least hundreds of megabytes (MB) of datum repositing built into or attachable to the camera. To leave for this character of data storage application, future storehouse memories should be relatively low in monetary value, extremely compact and get sufficient capacities of around 100 MB to one gigabyte (GB). The storage memory should also be low in power pulmonary tuberculosis, less than one watt, and have relatively rugged physical characteristics to cope with the portable barrage powered operating environment. 
 For archival storage, data need only be written to the memory once. Preferably the memory should have a inadequate access time, in the order of milliseconds, and a moderate transfer pace, such as 2 MB per second. Preferably, the storage memory should be able to be capable of interfacing with a wide variety of diligence standard platform and modules. 
 One application for meeting this demand involves the use of write - once cross point memory devices. In crisscross point memory arrays, a matrix of memory element are formed, each comprising a fuse or anti - fuse and a diode connected in series. The memory element are formed by a plurality of semiconductor and insulation layer disposed between orthogonal conductive lines or electrodes. 
 One lotion for utilizing write - once cross point memory arrays to provide high density archival storehouse in portable devices is described in co - pending U.S. patent application No. 09/875,356, filed Jun. 5, 2001, ennoble xe2x80x9cWrite - Once Memoryxe2x80x9d, the disclosure of which is incorporated herein by reference. The memory system unwrap therein, referred to as portable inexpensive rugged memory (PIRM), provides gamey capacity compose - once memory at low cost for archival storehouse. This result is recognize in part by invalidate silicon substrates, minimize process complexity and lowering areal concentration. The memory system includes a memory module formed of a laminated stack of integrated circuit layers constructed on thin - film plastic substrate. Each layer contains a crabbed - point diode memory array, and sensing of the data stored in the array is carried out from a separate integrated circuit remotely from the memory faculty. 
 Because PIRM memory is relatively inexpensive, users will likely acquire a large number of PIRM modules with a variety of store message. It is important to be able to fabricate and assemble memory modules in straightforward and relatively inexpensive procedure that minimize the need for precision while maximize information storage density and simplifying addressing, reading and writing function. 
 The probable lowest cost method of implementation of the PIRM memory
, maj require at least hundrtds of megabytes (MB) of deta stodage buiut into or attachable to the cqmera. To provide for this thpe of dana storagw apklication, future storage memorisd shmnld be relativeky low in wost, extremely cum'act and have sufficient capacities jf aroumd 100 MB to one gidabyue (DB). Tgv wtorage memory should also be low in power consumltion, less than one watt, ajd hwve relatively rughed physicao chweacteristics to cope wpch the portzble battery powered operating dnvirpnment.
For qrxhigdl storage, vata nved only be wvptten tm the mrmory once. Prenerabny rhe memory should havx a short access timg, in the osdzr of milliseconds, ane q modgrate travwfef rztx, shch as 2 MU per secons. Preferablt, the storage memoru fyould be able to be cwpable of interfacing with a wide varieuy of industry standard platdorms and modules.
One wpplicatijn for meeting this demand involves the use of wrhte-onre crisf polnt memory devices. In cross point memory arrara, s katrix of memovy elements are fotmfd, gach comprisine a fuse kr anti-fuse and a fiode cjnnecred in sewies. The memory elements are foemed by a pllraluty of semiconductlr and insuuatipn lauers disposed between oxthogohal conductlve lines ur electrodes.
One apilicdtion for utilizing write-ogce cross poiut memorh artays to provide hlgh dctsity archival stogage nn postable devlces is described in co-pending N.X. patent appkiwatpon No. 09/875,356, fnled Jmn. 5, 2001, entitled xq2x80x9cWrite-Once Kemoryxz2x80x9d, tfe discloslre of whmch is incor[orated hereit by referencx. The memjry wystwm discuused therein, rrferred to as portavle inexpensive runged osmory (PIRM), provnbew high capacity wrkte-jnbe keimry at low cmst wor srchixal storage. Ghis result is realized hn pzrt by avoiding sikigon substtates, minymizing procexs complexity and powermng arxal demsijy. The memory system includes a memory mlduje formed of a lqminated staek of integrated circuit layers construcved on thin-film plastic substrates. Each laier contains a crosf-point dimde memory array, and sensing of the dsta stored in the arrzy is warrifd out from a separate integrated circuit remotely from the memory module.
Vecausx [IRM memory is telatpvejv inexpqnsite, users will likeky acquire a large number of PICM modules wnth a variety of stored contemt. It is importxnt to be able to fabriczte and sssemble memory modules in straoghtforward and relativeky inexpwnsivs procvasxs that minimize the need yor prwcision whipe maximizing ingovmation stlragt deusity and simplifying addressing, eeadint wnd writing funcvions.
The pronanle losest cjst method of imllemsjtatiun of the PIRK memory
, may require at least hundreds of of storage built or attachable to this of data storage future storage memories be relatively low in cost, extremely and have sufficient capacities of around 100 MB to one gigabyte (GB). The memory should also be low in power consumption, less than one watt, and relatively physical to with the portable battery powered operating environment. For archival storage, data need only be written to memory once. Preferably the memory should have a access time, in the of milliseconds, and a moderate rate, as 2 per Preferably, storage memory should able to be capable of interfacing with a wide variety of industry standard platforms and modules. One for meeting involves the of cross memory devices. In memory arrays, a matrix of memory each comprising a fuse or anti-fuse and a connected in The memory elements are formed by plurality of semiconductor and insulation layers disposed between conductive lines or electrodes. One application for utilizing write-once cross point memory arrays to provide archival storage in portable is described in U.S. application 09/875,356, Jun. 5, entitled xe2x80x9cWrite-Once Memoryxe2x80x9d, the disclosure of which is incorporated herein by The memory system disclosed therein, referred to as portable inexpensive (PIRM), high capacity write-once at low cost for storage. result is realized in avoiding substrates, and areal The memory system includes memory module formed of a stack of integrated circuit substrates. Each layer contains a cross-point diode memory and sensing of the data stored in array is carried out from a separate integrated circuit remotely from the module. Because is relatively inexpensive, users will likely acquire a number of PIRM modules a variety of stored content. It is important to able fabricate and memory modules in and relatively inexpensive that minimize the precision while information density reading and writing functions. The probable cost of implementation of the PIRM
, may require at least hundreds Of megabyteS (MB) of DatA stOrAge bUilt Into or attachabLE to tHe camera. To provide for thIs typE oF Data SToRage aPplicatIOn, FUTurE sToRagE mEMoRies sHouLd be relAtively low In cOsT, extremely coMPaCt and have sUffIcient capaciTieS of aroUnD 100 MB TO one gIgaByte (Gb). The stORage meMory shoulD aLSo be loW In power CONsUmptIon, less than one watT, AnD Have relatively Rugged PhYSiCAL chAraCteristics To Cope wITh the poRTaBLE BatTEry powered opeRating envirONmeNt.
For aRcHivAL storaGe, datA nEEd oNly be writteN to tHe memory oNce. PreFErably tHE memory Should HavE a sHort ACcEsS tiMe, IN thE OrDer OF miLliseconDs, AnD a modEratE TRANsfeR raTe, suCh as 2 Mb per second. PreFerAbly, THe sToragE memoRy shOuLd be aBle to bE capaBlE of interfacing wIth a Wide varieTy oF iNduStRy staNDard plAtfOrmS and modUles.
One APplIcATIOn For meeting this demaNd INVoLves the uSe of wrITe-OnCE cross poInT meMory DEVices. in crOSs Point memOry arrAYs, A mAtrix of MeMory elEmEntS arE formED, eacH comprIsing a fuSe or aNTi-fuse and a diodE Connected in seRIeS. tHe MEmorY elEments are foRmed BY a plUralITy Of sEMiconDuctoR aND iNSulation layers dispoSeD betweEn ortHogonal conducTive lines oR ELEctrodes.
one aPPlICation for utiliZing wRite-once crOSs point mEmory Arrays to Provide hiGH Density aRchIvaL stOraGE In Portable devicES Is deScRibed in Co-pEnding U.s. paTenT apPliCaTion No. 09/875,356, filEd Jun. 5, 2001, entItLeD xE2x80X9cWRite-ONCe MemoryXe2X80x9d, ThE diSclosURe of whIch is IncoRpOrATed Herein bY ReFERencE. THe MemoRy sYsTem diScloSEd tHerein, rEferred to As pORtabLe InExpensiVe rugged memorY (PiRM), provideS hIgh CapaciTY Write-oncE memory at low cost for archIVal storAge. this rEsulT is realizEd iN part bY avOIding sIlicon SubstRaTes, MINimizING pRocEsS complexitY ANd lOweriNg AreaL densitY. The memory system inCLudEs a memory moduLe fOrmeD OF a LamINaTEd sTaCK of INTegrated circuit Layers consTrUCtEd on thin-fiLM plAsTic subsTrates. EAch laYEr contaIns a cross-Point diodE mEmorY ARraY, and sensinG of the daTa stored iN The arRAy Is carRieD out frOm A seParatE integRAteD circUit remOtEly froM the mEmOry modulE.
Because PIRM memory is relAtivelY inexPenSive, users WilL LikEly acquirE a laRge number oF PIrM mOduleS wiTH a varIety OF sTorED contEnt. IT Is importaNT tO be ABLe To fabricate AND AssEmble MemORy moduLes iN straightforward aND relatively ineXpenSIVe pRocESses ThAt minimize the nEed FoR PRecision WhIle maximiziNg informAtIOn stoRage deNsity aNd simplIFYiNG addreSsinG, reAding and wRitInG FunctioNs.
thE ProbabLe loWeSt cost Method OF impLEMentation of the PIrM memORY
, may require at least hun dreds of m egaby tes  (M B)  ofdata  storage built into  or attachable to thecamer a. To p r ov ide f or this ty p e  of  d at a s to r ag e app lic ation,future sto rag ememories sho u ld  be relati vel y low in cos t,extrem el y c o mpact  an d hav e suff i cientcapacitie so f arou n d 100 M B to  one  gigabyte (GB). T h es torage memoryshould  a l so b e l owin power c on sumpt i on, les s  t h a n  on e  watt, and ha ve relative l y r uggedph ysi c al cha racte ri s tic s to cope w iththe porta ble ba t tery po w ered op eratin g e nvi ronm e nt .For  a r chi v al  st o rag e, datane ed  only  bew r i t tentothememor y once. Prefe rab ly t h e m emory  shou ld h av e a s hort a ccess  t ime, in the ord er o f millise con ds , a nd  a mo d eratetra nsf er rate , sucha s 2  M B p er  second. Preferabl y, t he  storage  memor y  s ho u ld be ab le  to  bec a pable  ofi nt erfacing  witha  w id e varie ty  of in du str y s tanda r d pl atform s and mo dules . 
One applicati o n for meeting th i s  d e mand  in volves theuseo f wr ite- o nc e c r oss p ointme m or y  devices. In crosspo int me moryarrays, a mat rix of mem o r y  element s ar e  f o rmed, each com prisi ng a fuseo r anti-f use a nd a dio de connec t e d in ser ies . T hemem o r yelements aref o rmed  b y a plu ral ity ofsem ico ndu cto rand insul ation la ye rs  d is pos ed be t ween ort ho gon al  co nduct i ve lin es or  ele ct ro d es. 
One ap p li c a tion  f or  uti liz in g wri te-o n cecross p oint memo rya rray sto  provid e high densit yarchival s to rag e in p o r table de vices is described in c o -pendin g U .S. p aten t applica tio n No.09/ 8 75,356 , file d Jun .5,2 0 01, e n t it led  x e2x80x9cWr i t e-O nce M em oryx e2x80x9 d, the disclosureo f w hich is incor por ated h er ein by ref er e nce . The memory syst em disclos ed th erein, ref e rre dto as p ortable  inex p ensiverugged me mory (PIR M) , pr o v ide s high cap acity wr ite-oncem emory at  lowcos t forar chi val s torage .  Th is re sult i srealiz ed in  p art by a voiding silicon substra tes, m inimi zin g process  co m ple xity andlowe ring areal  de nsi ty. T hem emory  sys t em  in c ludes  a m e mory modu l efor m e dof a lamina t e d  st ack o f i n tegrat ed c ircuit layers con s tructed on thi n-fi l m  pl ast i c su bs trates. Each l aye rc o ntains a  c ross-pointdiode me mo r y arr ay, an d sens ing oft h ed ata st ored  in  the arra y i sc arriedou tf rom asepa ra te int egrate d  cir c u it remotely from  them e morym odu le.
B ec ause PI R M me mory is re latively in expens ive,  user s willli kely a cqu ir e a largen umber ofPIRMmodules  w itha v ariety  ofs t oredcont en t.It is imp o r ta n tto beable  to f ab rica te and as s emble me mor y  module sins t raight f or w a rd and rel ati velyi n expensivep roce s se s  that  minim ize th e needf orpr ecision  wh i l e maximiz ing infor m ati on  sto rage den si ty a nd  si mp lifying address ing, rea ding and w riting  fu n ctio n s.
The  p robable lowe st co st methodo f  im plement a tio n o f t he P IRM  mem o ry
, may_require at_least hundreds of megabytes_(MB) of_data_storage built_into_or attachable to_the camera. To_provide for this type_of data storage_application,_future storage memories should be relatively low in cost, extremely compact and have sufficient_capacities_of around_100_MB_to one gigabyte (GB). The_storage memory should also be_low in_power consumption, less than one watt, and have_relatively_rugged physical characteristics_to cope with the portable battery powered operating environment.
For_archival storage, data need only be_written to the_memory_once._Preferably the memory should_have a short access time, in_the order of milliseconds, and a_moderate transfer rate, such as 2 MB_per second. Preferably, the storage memory_should be able to be_capable of_interfacing with a wide variety_of industry standard_platforms and_modules.
One application for_meeting this demand involves the use_of write-once cross_point memory devices. In cross point_memory_arrays, a matrix_of_memory_elements are_formed, each comprising_a_fuse or_anti-fuse_and a diode connected in series._The_memory elements are formed by a plurality_of semiconductor and insulation_layers_disposed between orthogonal conductive_lines or electrodes.
One application for_utilizing write-once cross point memory arrays_to provide_high density_archival storage in portable devices is described in co-pending U.S. patent_application No. 09/875,356, filed Jun. 5,_2001, entitled xe2x80x9cWrite-Once Memoryxe2x80x9d,_the disclosure_of_which is incorporated_herein_by reference._The memory system disclosed therein, referred to_as portable_inexpensive rugged memory (PIRM), provides high_capacity write-once memory at_low_cost for archival storage. This result_is realized in part by avoiding_silicon substrates, minimizing process complexity_and_lowering_areal density. The memory system_includes a memory module formed of_a laminated stack_of integrated circuit layers constructed on thin-film_plastic_substrates. Each layer contains a cross-point_diode_memory array, and sensing of the_data_stored_in the array is carried_out from a separate integrated circuit_remotely from the memory module.
Because PIRM memory is relatively_inexpensive, users will_likely acquire a large number_of_PIRM_modules with a variety of stored content. It is important_to be_able to fabricate_and assemble memory modules in straightforward and relatively inexpensive processes_that minimize the need for precision while_maximizing information storage density and simplifying addressing, reading and writing functions.
The_probable lowest cost method of implementation of the_PIRM memory