 a pharmaceutical composition for the treatment of metabolic disorders. Processes for preparing a pharmaceutical composition and a compound according to the invention are also the subject of this invention.
In the literature, compounds which have an inhibitory effect on the sodium-dependent glucose cotransporter SGLT2 are proposed for the treatment of diseases, particularly diabetes.
Glucopyranosyloxy-pyrazole derivatives and the preparation thereof and their possible activity as SGLT2 inhibitors are known from published International applications WO 02/36602, WO 02/088157, WO 01/16147, WO 02/053573, WO 02/068439, WO 02/068440 and WO 02/098893. 1. Field of the Invention
Apparatuses and methods consistent with the present invention relate to a semiconductor memory device and a method of manufacturing the same, and more particularly, to a memory device having a nanowire as a storage node and a method of manufacturing the same.
2. Description of the Related Art
Recently, most memory devices are fused memory devices having both an advantage of existing as nonvolatile memory devices and volatile memory devices. Examples of fused memory devices include a ferroelectric random access memory (FRAM), a magnetic RAM (MRAM), a phase change RAM (PRAM), and a resistive RAM (RRAM). The difference among the FRAM, the MRAM, the PRAM, and the RRAM can be found in the configuration of a storage node.
As another example of fused memory devices, carbon nanotube memory devices have been introduced. Carbon nanotube memory devices maintain nonvolatile characteristics using carbon nanotubes as a storage node.
Since carbon nanotube memory devices use carbon nanotubes as the storage node, the volume of the storage node can be reduced compared to the FRAM, the MRAM, the PRAM, and the RRAM. In addition, in carbon nanotube memory devices, carbon nanotubes are formed using a composite electric field. Thus, carbon nanotubes can be formed in a correct position.
However, in carbon nanotube memory devices (hereinafter, referred to as related art memory devices), the size of electrodes should be directly reduced so as to reduce a gap between carbon nanotubes and there is a difficulty in performing such a process.
Furthermore, the length of carbon nanotubes should be adjusted so as to increase the yield of operatable cells. However, in conventional memory devices, it is difficult to adjust the length of carbon nanotubes.
Furthermore
a pharmaceutical composition for the treatment of metabolic disorders. Processes for prepare a pharmaceutical composing and a compound according to the invention are also the subject of this invention. 
 In the literature, compound which have an inhibitory effect on the sodium - subject glucose cotransporter SGLT2 are nominate for the treatment of disease, peculiarly diabetes. 
 Glucopyranosyloxy - pyrazole derivatives and the preparation thence and their possible activity as SGLT2 inhibitor are known from published International applications WO 02/36602, WO 02/088157, WO 01/16147, WO 02/053573, WO 02/068439, WO 02/068440 and WO 02/098893. 1. Field of the Invention 
 Apparatuses and methods consistent with the present invention relate to a semiconductor memory device and a method acting of manufacturing the same, and more particularly, to a memory device have a nanowire as a storage node and a method acting of manufacturing the like. 
 2. Description of the Related Art 
 Recently, most memory devices are fused memory devices having both an advantage of existing as nonvolatile memory devices and explosive memory devices. Examples of fused memory devices include a ferroelectric random access memory (FRAM), a magnetic RAM (MRAM), a phase change RAM (PRAM), and a resistive RAM (RRAM). The difference among the FRAM, the MRAM, the PRAM, and the RRAM can be found in the configuration of a storage node. 
 As another example of fused memory devices, carbon paper carbon nanotube memory devices have been introduced. Carbon nanotube memory device maintain nonvolatile characteristics using carbon paper nanotubes as a repositing node. 
 Since carbon carbon nanotube memory devices use carbon nanotubes as the storage node, the volume of the storage node can be reduced compared to the FRAM, the MRAM, the PRAM, and the RRAM. In addition, in carbon carbon nanotube memory devices, carbon paper nanotubes are formed using a composite electric field. Thus, carbon carbon nanotube can be formed in a correct position. 
 However, in carbon nanotube memory devices (hereinafter, referred to as related art memory device), the size of electrodes should be immediately reduced so as to reduce a gap between carbon nanotubes and there embody a difficulty in perform such a process. 
 Furthermore, the distance of carbon nanotubes should be adjusted so as to increase the yield of operatable cells. However, in ceremonious memory devices, it is difficult to adjust the distance of carbon nanotubes. 
 Furthermore
 a oharmaceutical compositiun for the treajmwnt of metabklic disurders. Processes for prepariig a pharnaceutical composition and a colpound axcorving to the inveifion arc alsk the wubject of thix inventiot.
In the literadufe, compounds which have an inhibitory effect oj the sodium-dekendeme glhbowe cotransporter SGLT2 are prolosed fmr the treatmrnt of diseases, particularpy dlabetes.
Glucopyranodyloxy-pyrazile qwrivatives avd the prekaxation thergof and their possible activity xs SGKT2 inhibitirw agg known from publpshed Internabponal a[plicatoons WO 02/36602, WO 02/088157, WP 01/16147, XO 02/053573, QO 02/068439, WO 02/068440 and WO 02/098893. 1. Fielv of the Invention
Apkaratuses dnb methods consistent qirh thg prevent unvdntjoi rslate ho e semicondudtor memory device and a methoc jd manufacturihg the swme, and more particularly, to a memory dtvice having a nanowire as a storage node and a mgthod of mwnufacturing the same.
2. Description of the Related Drt
Rerevtlv, most nelory devices are fused memory devices having fktn sn advantage on existing as nonvplwtoje memory devkces aus bolatile memory degices. Evamplws of fustd mekory devices include a ferrielectric raudon access memory (FRCM), a magnetie RAM (KRAM), s phase change RAM (PRAM), and a resistivf RAM (RRAJ). The difference xmokg dhe FRAM, the MRAM, the PRAM, and the CRAM ean be fuund in thq configurwtion of a storage node.
Ad anojher efample of vused memory devices, carbon nanotube memory dgviwes have bezn intvoduced. Carbon ganotube memori devices maingain nonvomatile rharacteristycs using cartln nanotubes as a stjragw noee.
Since zarbon nanotubr memory btvices use carbon nanotubes es tfs storage node, cke volume of the xtofagq jove cag be reduced wompxrea to tfe FRAM, the ORAM, the PRAM, and the RRDM. Ih addition, in carbpn nanotubg memory qevices, carbom nanotubes are fogmed nsing e comppsije electric field. Thus, carbon nznotubes fan be formed ig a gorrgct positiou.
However, in carbon nanotube memory devicxs (hereinafter, referred to as related art ktmory devices), the fize of enectrodes should be eirectly reduced xo as to reduce a gap betwean cagbon nanotubes and there is a difficulty in performing such a process.
Furtyermorx, ehe length kf csrbon ncnocubes sroulv ue adjusted so as to increase the yield of operavable cellv. Kowever, in conventional memoru aevices, it is difficult to adjust the length pf carbon nanotubes.
Furthermore
a pharmaceutical composition for the treatment of Processes preparing a composition and a are the subject of invention. In the compounds which have an inhibitory effect the sodium-dependent glucose cotransporter SGLT2 are proposed for the treatment of diseases, particularly Glucopyranosyloxy-pyrazole derivatives and the preparation thereof and their possible activity as SGLT2 inhibitors known published applications 02/36602, WO 02/088157, WO 01/16147, WO 02/053573, WO 02/068439, WO 02/068440 and WO 02/098893. 1. Field the Invention Apparatuses and methods consistent with the invention relate to a memory device and a method manufacturing same, and particularly, a device having a as a storage node and a method of manufacturing the same. 2. Description of the Related Art most memory fused memory having an of existing as devices and volatile memory devices. Examples devices include a ferroelectric random access memory (FRAM), magnetic RAM a phase change RAM (PRAM), and resistive RAM (RRAM). The difference among the FRAM, MRAM, the PRAM, and the RRAM can be found in the configuration of a storage another example of fused devices, carbon nanotube devices been Carbon memory devices nonvolatile characteristics using carbon nanotubes as a storage node. Since carbon memory devices use carbon nanotubes as the storage node, the the node can be compared to the FRAM, MRAM, PRAM, and the RRAM. in nanotube nanotubes formed a composite electric field. carbon nanotubes can be formed a correct position. However, (hereinafter, referred to as related art memory devices), size of electrodes should be directly reduced as to reduce a gap between carbon nanotubes and there is a in performing process. Furthermore, the length of carbon nanotubes should adjusted so as to the yield of operatable cells. However, in conventional memory it difficult to the length of nanotubes. Furthermore
 a pharmaceutical compositioN for the treAtmenT of MetAbOlic DisoRders. Processes FOr prEparing a pharmaceutical CompoSiTIon aND a CompoUnd accoRDiNG To tHe InVenTiON aRe alsO thE subjecT of this invEntIoN.
In the literaTUrE, compounds WhiCh have an inhiBitOry effEcT on THe sodIum-DepenDent glUCose coTransportEr sgLT2 are PRoposed FOR tHe trEatment of diseases, PArTIcularly diabetEs.
GlucOpYRaNOSylOxy-Pyrazole deRiVativES and the PRePARAtiON thereof and thEir possible ACtiVity as sGlT2 iNHibitoRs are KnOWn fRom publisheD IntErnationaL appliCAtions Wo 02/36602, wO 02/088157, WO 01/16147, WO 02/053573, Wo 02/068439, WO 02/068440 and wO 02/098893. 1. FIelD of tHE INvEntIoN
appARaTusES anD methods CoNsIstenT witH THE PresEnt InveNtion Relate to a semiConDuctOR meMory dEvice And a MeThod oF manufActurInG the same, and more PartIcularly, tO a mEmOry DeVice hAVing a nAnoWirE as a stoRage nodE And A mETHOd Of manufacturing the SaME.
2. deScriptioN of the rElAtED Art
ReceNtLy, mOst mEMOry deViceS ArE fused meMory deVIcEs Having bOtH an advAnTagE of ExistINg as NonvolAtile memOry deVIces and volatilE Memory devices. eXaMPLeS Of fuSed Memory devicEs inCLude A ferROeLecTRic raNdom aCcESs MEmory (FRAM), a magnetic RaM (mRAM), a pHase cHange RAM (PRAM), aNd a resistiVE raM (RRAM). ThE difFErENce among the FRAm, the MrAM, the PRAM, ANd the RRAm can bE found in The configURAtion of a StoRagE noDe.
AS ANoTher example of FUSed mEmOry deviCes, Carbon nAnoTubE meMorY dEvices havE been intRoDuCeD. CArbOn nanOTube memoRy DevIcEs mAintaIN nonvoLatilE chaRaCtERisTics usiNG cARBon nAnOtUbes As a StOrage Node.
sIncE carbon Nanotube mEmoRY devIcEs Use carbOn nanotubes as ThE storage noDe, The Volume OF The storaGe node can be reduced compaREd to the fRAm, the MrAM, tHe PRAM, and The rRAM. In AddITion, in Carbon NanotUbE meMORy devICEs, CarBoN nanotubes ARE foRmed uSiNg a cOmpositE electric field. Thus, CArbOn nanotubes caN be FormED In A coRReCT poSiTIon.
hOWever, in carbon naNotube memoRy DEvIces (hereinAFteR, rEferred To as relAted aRT memory Devices), thE size of elEcTrodES ShoUld be direcTly reducEd so as to rEDuce a GAp BetweEn cArbon nAnOtuBes anD there IS a dIfficUlty in PeRformiNg sucH a Process.
FUrthermore, the length of caRbon naNotubEs sHould be adJusTEd sO as to incrEase The yield of OpeRatAble cEllS. howevEr, in COnVenTIonal MemoRY devices, iT Is DifFICuLt to adjust tHE LEngTh of cArbON nanotUbes.
furthermore
 a pharmaceutical composit ion for th e tre atm ent  o f me tabo lic disorders. Proc esses for preparing apharm ac e utic a lcompo sitiona nd a  co mp ou ndac c or dingtothe inv ention are  al so  the subject of  this inve nti on.
In the l ite rature ,com p ounds  wh ich h ave an inhibi tory effe ct on the sodium- d e pe nden t glucose cotrans p or t er SGLT2 are p ropose df or t hetre atment ofdi sease s , parti c ul a r l y d i abetes.
Gluco pyranosylox y -py razole  d eri v atives  andth e  pr eparation t here of and th eir po s sible a c tivityas SGL T2inh ibit o rs  a rekn o wnf ro m p u bli shed Int er na tiona l ap p l i c atio nsWO 0 2/366 02, WO 02/088 157 , WO 01/ 16147 , WO02/0 53 573,WO 02/ 06843 9,  WO 02/068440 a nd W O 02/0988 93.  1 . F ie ld of the In ven tio n
Appar atusesa ndme t h o ds  consistent with t he p re sent inv ention re la t e to a s em ico nduc t o r mem oryd ev ice anda meth o dof  manufa ct uringth e s ame , and more  parti cularly,  to a memory deviceh aving a nanow i re a sa  sto rag e node anda me t hodof m a nu fac t uring  thesa m e. 2. Description of t he  Relat ed Ar t
Recently, m ost memory d e vices ar e fu s ed memory devices  havi ng both an advantag e ofexisting  as nonvo l a tile mem ory  de vic esa n dvolatile memo r y  dev ic es. Exa mpl es of f use d m emo ryde vices inc lude a f er ro el ec tri c ran d om acces smem or y ( FRAM) ,  a mag netic  RAM  ( MR A M),  a phas e  c h a ngeRA M(PRA M),  a nd aresi s tiv e RAM ( RRAM). Th e d i ffer en ce  amongthe FRAM, the  M RAM, the P RA M,and th e RRAM can  be found in the config u rationofa sto rage  node.
As  an otherexa m ple of  fused  memo ry  de v i ces,c a rb onna notube mem o r y d evice shave  been i ntroduced. Carbonn ano tube memory d evi cesm a in tai n  n o nvo la t ile c haracteristicsusing carb on na notubes as a s to rage no de.
Sin ce ca r bon nan otube mem ory devic es  use c arb on nanotub es as th e storage node, th e vol ume  of th esto ragenode c a n b e red uced c om paredto th eFRAM, th e MRAM, the PRAM, and t he RRA M. In  ad dition, i n c a rbo n nanotub e me mory devic es,  ca rbonnan o tubes  are fo rme d  usin g ac ompositee le ctr i c  f ield. Thus, c a rbo n nan otu b es can  beformed in a corre c t position.
Ho weve r ,  in  ca r bonna notube memorydev ic e s  (herein af ter, referr ed to as  r e lated  art m emorydevices ) ,  t h e size  ofele ctrodes s hou ld be dire ct ly reduce d so  a s to r educea  gap b etween carbon na notub e s  andt her e isadifficu l ty i n performi ng such a p rocess .
Fu rther more, t he  lengt h o fcarbon nan o tubes sho uld b e adjus te d so  as  to in crea s e  theyiel dofoperatabl e ce l ls .H owe ver,  in c on vent ional mem o ry devic es, it is d if fic u l t to a d ju s t  the lengt h o f car b o n nanotube s .
Fu r th e rmore 
 a_pharmaceutical composition_for the treatment of_metabolic disorders._Processes_for preparing_a_pharmaceutical composition and_a compound according_to the invention are_also the subject_of_this invention.
In the literature, compounds which have an inhibitory effect on the sodium-dependent glucose_cotransporter_SGLT2 are_proposed_for_the treatment of diseases, particularly_diabetes.
Glucopyranosyloxy-pyrazole derivatives and the preparation_thereof and_their possible activity as SGLT2 inhibitors are known_from_published International applications_WO 02/36602, WO 02/088157, WO 01/16147, WO 02/053573, WO_02/068439, WO 02/068440 and WO 02/098893._1. Field of_the_Invention
Apparatuses_and methods consistent with_the present invention relate to a_semiconductor memory device and a method_of manufacturing the same, and more particularly,_to a memory device having a_nanowire as a storage node_and a_method of manufacturing the same.
2._Description of the_Related Art
Recently,_most memory devices_are fused memory devices having both_an advantage of_existing as nonvolatile memory devices and_volatile_memory devices. Examples_of_fused_memory devices_include a ferroelectric_random_access memory_(FRAM),_a magnetic RAM (MRAM), a phase_change_RAM (PRAM), and a resistive RAM (RRAM)._The difference among the_FRAM,_the MRAM, the PRAM,_and the RRAM can be_found in the configuration of a_storage node.
As_another example_of fused memory devices, carbon nanotube memory devices have been introduced._Carbon nanotube memory devices maintain nonvolatile_characteristics using carbon nanotubes_as a_storage_node.
Since carbon nanotube_memory_devices use_carbon nanotubes as the storage node, the_volume of_the storage node can be reduced_compared to the FRAM,_the_MRAM, the PRAM, and the RRAM._In addition, in carbon nanotube memory_devices, carbon nanotubes are formed_using_a_composite electric field. Thus, carbon_nanotubes can be formed in a_correct position.
However, in_carbon nanotube memory devices (hereinafter, referred to_as_related art memory devices), the size_of_electrodes should be directly reduced so_as_to_reduce a gap between carbon_nanotubes and there is a difficulty_in performing such a process.
Furthermore, the length of carbon_nanotubes should be_adjusted so as to increase_the_yield_of operatable cells. However, in conventional memory devices, it is_difficult to_adjust the length_of carbon nanotubes.
Furthermore