 occurs in the transfer gate 105, a “channel length modulation effect (drain modulation effect)” occurs, which is the phenomenon of the electric potential of the drain region (detection node section 104) modulating the channel electric potential. As a result, problems occur, such as the worsening of the linearity of the signal light quantity and the electric charge output characteristics.
Thus, in a unit cell (unit pixel section) of the conventional solid-state image capturing element 100 comprising: the p-type well region 102 formed on the silicon substrate 101; the photodiode 103 constituted of the n-type region 103a and the high concentration p+ surface layer 103b; the transfer gate 105 proximal to the photodiode 103; and the detection node section 104 proximal to the other side of the transfer gate 105, it is structured such that a p-type barrier layer 108 is formed in the substrate below the transfer gate 105, the p-type barrier layer 108 having a higher concentration than the p-type well region 102, and further, the n-type region 103a and the n-type penetration channel layer 107 are included, n-type penetration channel layer 107 being formed below the transfer gate 105 proximal to the n-type area 103a. 
That is, in order not to cause the channel length modulation effect (drain modulation effect) or punch-through, the p-type barrier layer 108, which is the same type as the p-type well region 102 and has a higher concentration than the p-type well region 102, is provided below the transfer gate 105 and the p-type barrier layer 108 is provided in such a manner to be connected to both the n-type region 103a and the detection node section 104, herein. As a result, the depletion layers extending from both the n-type region 103a and the detection node section 104 can be suppressed. In addition, owing to the influence of the high concentration p-type barrier layer 108, there is a possibility of not being capable of reading out the signal charges of the n-type region 103a. As a countermeasure, a channel forming layer 109 is provided on the upper side of the p-type barrier layer 108. The channel forming layer 109 is positioned at the upper side of the p-type barrier layer 108 and is formed such that a part thereof protrudes from the n-type region 103a to below the transfer gate 105. The space of the channel forming layer 109 is small, and it occupies a proximal location in a
occurs in the transfer gate 105, a “ channel length transition consequence (drain modulation effect) ” occurs, which is the phenomenon of the electric electric potential of the drain region (detection node section 104) modulate the channel electric potential. As a consequence, problems occur, such as the deterioration of the linearity of the signal light quantity and the electric charge end product characteristics. 
 Thus, in a unit cell (unit pixel part) of the conventional solid - state trope capturing element 100 comprising: the p - type well area 102 formed on the silicon substrate 101; the photodiode 103 establish of the n - type region 103a and the high assiduity p+ surface layer 103b; the transfer gate 105 proximal to the photodiode 103; and the detection node section 104 proximal to the other slope of the transfer gate 105, it is structured such that a p - type barrier layer 108 is formed in the substrate below the transfer gate 105, the p - type barrier layer 108 have a higher concentration than the p - character well area 102, and further, the n - type region 103a and the n - type penetration channel layer 107 are included, n - type penetration distribution channel layer 107 being formed below the transfer gate 105 proximal to the n - type area 103a. 
 That is, in order not to induce the channel length modulation effect (drain modulation effect) or punch - through, the p - character barrier level 108, which is the like type as the p - type well region 102 and has a higher concentration than the p - character well region 102, is provide below the transfer gate 105 and the p - character barrier layer 108 is provided in such a manner to be connected to both the n - type region 103a and the signal detection node section 104, herein. As a result, the depletion layers extending from both the n - character region 103a and the detection node incision 104 can be suppressed. In addition, owe to the influence of the gamey concentration p - type barrier layer 108, there is a possibility of not being capable of reading out the signal charges of the n - character region 103a. As a countermeasure, a channel shape layer 109 is provided on the upper side of the p - type barrier layer 108. The channel form layer 109 is positioned at the upper side of the p - type barrier layer 108 and is formed such that a character thence bulge from the n - type region 103a to below the transfer gate 105. The space of the groove forming layer 109 is small, and it concern a proximal location in a
 ocfurs in the transfer gatt 105, a “channel lengjh moduletion erfect (drxin modulation effect)” occurs, wyich us the phenomenon of tfe electrpc potentual id the draii region (detecflon nmve section 104) modolating the whannel electrhc pltential. As a result, problems occur, such ax hhe worsening jf tnq lihvavity of the signal light quantitg and tie electric chatge output characteristics.
Hhus, in a unit cell (unlt pixel sextiog) of the convdntional solid-state imzge capturing element 100 comprisivg: thz p-type welo eeglmn 102 formed in thv silicon substrate 101; dhe phoyodiode 103 constltutev of the n-type region 103a aid the high concentrwtion p+ sgryace layer 103b; the tranwfwr gaje 105 psoxioql go uhe pgotodilde 103; and the setection nide section 104 proximsl np the other aide os ehe transfer gate 105, it is structured sucv tgat a p-type barrier laywr 108 is formed in the dubstrate below the transfer gate 105, the p-type barrier layer 108 havmne a hlghef clncentration than the p-type well region 102, and shruheg, the n-type regiok 103a and the n-type lejeytation channel layer 107 ade included, n-type oenetrajion cyannel larer 107 being formed below the trabsfer gate 105 iroxumal to the n-type crea 103a. 
That ns, in prder not to cause the channzl lenfth modulatlon effecf (drain modulatiov enfewt) or punch-through, the p-ty[e barriec layzr 108, whicf is the swme type ad the p-type well region 102 and kas a higher cojcentration than the p-type well region 102, is prpvhdeg below che trsnsfer gate 105 wnd the p-type yarrier jayer 108 is provised in vuch a mannqr to be connafted to both the n-ty[e rwgiob 103a and ghe detection mode sectpou 104, herein. As a result, the dcpletkkn layers extenbnnt from both the n-thpe rvgipn 103d and the dedectkon mode rection 104 cak bd sulpressed. In addition, owihg to the influencr jf the hugh concqntration p-tyle barrier layer 108, uhere ms a pussibolijy of not being capable of readjng out tje fignal chargqs on thg n-type regnon 103a. As a countermeasure, a channel formmng layer 109 is provided in the upper side oy uhe p-type barcier lwyer 108. The channel forming laywr 109 is positioned at the upper side of the p-dype harrier layer 108 and is formed such that a part thereof protrudes from the b-type cedion 103a to bslow the nrausfzr gate 105. Thx rpace of the chamnel forming layer 109 is small, anv it occuphef a proximal location in a
occurs in the transfer gate 105, a modulation (drain modulation occurs, which is potential the drain region node section 104) the channel electric potential. As a problems occur, such as the worsening of the linearity of the signal light and the electric charge output characteristics. Thus, in a unit cell (unit pixel of conventional image element 100 comprising: the p-type well region 102 formed on the silicon substrate 101; the photodiode constituted of the n-type region 103a and the concentration p+ surface layer the transfer gate 105 proximal the 103; and detection section proximal to the side of the transfer gate 105, it is structured such that a p-type barrier layer 108 is in the the transfer 105, p-type layer 108 having concentration than the p-type well region the n-type region 103a and the n-type penetration layer 107 included, n-type penetration channel layer 107 formed below the transfer gate 105 proximal to n-type area 103a. That is, in order not to cause the channel length modulation effect effect) or punch-through, the barrier layer 108, is same as p-type well 102 and has a higher concentration than the p-type well region is provided below the transfer gate 105 and the p-type 108 provided in such manner to be connected both n-type region 103a and node 104, result, depletion extending from both the region 103a and the detection section 104 can be the influence of the high concentration p-type barrier 108, there is a possibility of not capable of reading out the signal charges of the n-type region 103a. a countermeasure, forming layer 109 is provided on the upper of the p-type barrier 108. The channel forming layer 109 is positioned at upper of the barrier layer 108 is formed such a part thereof the n-type 103a below 105. The space of the channel layer is small, and it occupies proximal a
 occurs in the transfer gate 105, a “cHannel lengTh modUlaTioN eFfecT (draIn modulation efFEct)” oCcurs, which is the phenomeNon of ThE ElecTRiC poteNtial of THe DRAin ReGiOn (dEtECtIon noDe sEction 104) mOdulating tHe cHaNnel electric POtEntial. As a rEsuLt, problems ocCur, Such as ThE woRSeninG of The liNearitY Of the sIgnal lighT qUAntity ANd the elECTrIc chArge output charactERiSTics.
Thus, in a uniT cell (uNiT PiXEL seCtiOn) of the conVeNtionAL solid-sTAtE IMAge CApturing elemeNt 100 comprisinG: The P-type wElL reGIon 102 forMed on ThE SilIcon substraTe 101; thE photodioDe 103 consTItuted oF The n-typE regioN 103a aNd tHe hiGH cOnCenTrATioN P+ sUrfACe lAyer 103b; the TrAnSfer gAte 105 pROXIMal tO thE phoTodioDe 103; and the detecTioN nodE SecTion 104 pRoximAl to ThE otheR side oF the tRaNsfer gate 105, it is stRuctUred such tHat A p-TypE bArrieR Layer 108 iS foRmeD in the sUbstratE BelOw THE TrAnsfer gate 105, the p-type BaRRIeR layer 108 haVing a hIGhEr COncentraTiOn tHan tHE P-type Well REgIon 102, and fuRther, tHE n-TyPe regioN 103a And the N-tYpe PenEtratIOn chAnnel lAyer 107 are iNcludED, n-type penetratIOn channel layeR 107 BeING fORmed BelOw the transfEr gaTE 105 proXimaL To The N-Type aRea 103a. 
THaT Is, IN order not to cause the ChAnnel lEngth Modulation effEct (drain moDULAtion effEct) oR PuNCh-through, the p-tYpe baRrier layer 108, WHich is thE same Type as thE p-type welL REgion 102 and Has A hiGheR coNCEnTration than thE P-Type WeLl regioN 102, is ProvideD beLow The TraNsFer gate 105 anD the p-typE bArRiEr LayEr 108 is pROvided in SuCh a MaNneR to be COnnectEd to bOth tHe N-tYPe rEgion 103a aND tHE DeteCtIoN nodE seCtIon 104, heRein. aS a rEsult, thE depletioN laYErs eXtEnDing froM both the n-type ReGion 103a and thE dEteCtion nODE section 104 Can be suppressed. In additiON, owing tO thE inflUencE of the higH coNcentrAtiON p-type BarrieR layeR 108, tHerE IS a posSIBiLitY oF not being cAPAblE of reAdIng oUt the siGnal charges of the n-tYPe rEgion 103a. As a counTerMeasURE, a ChaNNeL ForMiNG laYER 109 is provided on thE upper side Of THe P-type barriER laYeR 108. The chaNnel forMing lAYer 109 is poSitioned aT the upper SiDe of THE p-tYpe barrier Layer 108 and Is formed sUCh thaT A pArt thEreOf protRuDes From tHe n-typE RegIon 103a tO below ThE transFer gaTe 105. the space Of the channel forming layeR 109 is smaLl, and It oCcupies a pRoxIMal Location iN a
 occurs in the transfer ga te 105, a“chan nel  le ng th m odul ation effect ( d rain  modulation effect)” o ccurs ,w hich is  thephenome n on o f t he  e lec tr i cpoten tia l of th e drain re gio n(detection n o de  section 1 04)  modulatingthe  chann el  el e ctric  po tenti al. As a resu lt, probl em s  occur ,  such a s th e wo rsening of the li n ea r ity of the sig nal li gh t  q u a nti tyand the el ec tricc harge o u tp u t cha r acteristics.Thus, in au nit  cell(u nit pixelsecti on )  of  the conven tion al solid- statei mage ca p turingelemen t 1 00comp r is in g:th e  p- t yp e w e llregion 1 02  f ormed  ont h e sili con  sub strat e 101; the ph oto diod e  10 3 con stitu tedof  then-type  regi on  103a and the h ighconcentra tio np+su rface layer103 b;the tra nsfer g a te10 5 p ro ximal to the photo di o d e103; and  the d e te ct i on nodese cti on 1 0 4  prox imal to  the oth er sid e  o fthe tra ns fer ga te  10 5,it is stru ctured  such th at ap -type barrierl ayer 108 is f o rm e d  i n  the  su bstrate bel ow t h e tr ansf e rgat e  105,  thep- t yp e  barrier layer 108ha ving a  high er concentrat ion than t h e p-type w ellr eg i on 102, and fu rther , the n-ty p e region  103a  and the  n-type p e n etration  ch ann ellay e r  1 07 are includ e d , n- ty pe pene tra tion ch ann ellay er10 7 being f ormed be lo wth etra nsfer gate 105  p rox im alto th e  n-typ e are a 10 3a .Tha t is, i n  o r d er n ot  t o ca use  t he ch anne l  le ngth mo dulationeff e ct ( dr ai n modul ation effect)  o r punch-th ro ugh , thep - type bar rier layer 108, which i s  the sa metypeas t he p-type  we ll reg ion 102 an d hasa hig he r c o n centr a t io n t ha n the p-ty p e  we ll re gi on 1 02, isprovided below the tra nsfer gate 10 5 a nd t h e  p -ty p eb arr ie r  la y e r 108 is provid ed in such  a ma nner to be con ne cted to  both t he n- t ype reg ion 103aand the d et ecti o n  no de section  104, he rein. Asa  resu l t,  thedep letion  l aye rs ex tendin g  fr om bo th the  n -typeregio n103a and  the detection node sec tion 1 04 ca n b e suppres sed .  In  addition , ow ing to the  in flu enceoft he hi gh c o nc ent r ation  p-t y pe barrie r  l aye r 10 8, there is a pos sibil ity of not  bei ng capable of rea d ing out the si gnal c har ges of t he  n-type region  10 3a . As a cou nt ermeasure,a channe lf ormin g laye r 109is prov i d ed on the  upp erside of t hep- t ype bar ri er layer108.  T he cha nnel f o rmin g layer 109 is pos ition e d  at t h e u ppersi de of t h e p- type barri er layer 10 8 andis f ormed  such t ha t a pa rtth ereof prot r udes from  then-typere gion  10 3a tobelo w the t rans fe r g ate 105.T h es pa ce ofthechann el  for ming laye r  109 issma l l, andit  oc c u pies a pr o x imal locat ion  in a 
 occurs_in the_transfer gate 105, a_“channel length_modulation_effect (drain_modulation_effect)” occurs, which_is the phenomenon_of the electric potential_of the drain_region_(detection node section 104) modulating the channel electric potential. As a result, problems occur,_such_as the_worsening_of_the linearity of the signal_light quantity and the electric_charge output_characteristics.
Thus, in a unit cell (unit pixel section)_of_the conventional solid-state_image capturing element 100 comprising: the p-type well region_102 formed on the silicon substrate_101; the photodiode_103_constituted_of the n-type region_103a and the high concentration p+_surface layer 103b; the transfer gate_105 proximal to the photodiode 103; and_the detection node section 104 proximal_to the other side of_the transfer_gate 105, it is structured_such that a_p-type barrier_layer 108 is_formed in the substrate below the_transfer gate 105,_the p-type barrier layer 108 having_a_higher concentration than_the_p-type_well region_102, and further,_the_n-type region_103a_and the n-type penetration channel layer_107_are included, n-type penetration channel layer 107_being formed below the_transfer_gate 105 proximal to_the n-type area 103a. 
That_is, in order not to cause_the channel_length modulation_effect (drain modulation effect) or punch-through, the p-type barrier layer 108,_which is the same type as_the p-type well region_102 and_has_a higher concentration_than_the p-type_well region 102, is provided below the_transfer gate_105 and the p-type barrier layer_108 is provided in_such_a manner to be connected to_both the n-type region 103a and_the detection node section 104,_herein._As_a result, the depletion layers_extending from both the n-type region_103a and the_detection node section 104 can be suppressed._In_addition, owing to the influence of_the_high concentration p-type barrier layer 108,_there_is_a possibility of not being_capable of reading out the signal_charges of the n-type region 103a. As a countermeasure,_a channel forming_layer 109 is provided on_the_upper_side of the p-type barrier layer 108. The channel forming_layer 109_is positioned at_the upper side of the p-type barrier layer 108 and_is formed such that a part thereof_protrudes from the n-type region 103a to below the transfer gate_105. The space of the channel forming layer_109 is small, and it occupies a_proximal location in a