, U.S. Pat. No. 6,204,524, and U.S. Pat. No. 6,333,205, each of which is assigned to Micron Technology, Inc. The disclosures of each of the forgoing patents are hereby incorporated by reference in their entirety.
During operation of imaging devices, photons of incident radiation impinging on the imaging devices may not all reach the photosensors to be converted into electrons. Also, the converted electrons may be lost in the various layers of the device or in adjacent pixel cells, or be mixed with dark current electrons in the various layers. It is thus desirable to provide an imaging device and/or system that mitigates the effects of the above discussed deficiencies. 1. Field of the Invention
The present invention relates to an improved method for the electrical attachment of a semiconductor die to the leads of a lead frame and the apparatus formed therefrom. More particularly, the present invention relates to the use of multi-layered or laterally segmented metal/elastomer strips to achieve electrical contact between the bond pads of a semiconductor die and the leads of a lead frame or other conductor pattern in order to eliminate the necessity for wirebonding or direct lead bonding (TAB) to the semiconductor die.
2. Background Art
The most common die-connection technology in the microelectronics industry is wirebonding. As illustrated in FIG. 6, wirebonding generally starts with a semiconductor die 30 bonded by a die-attach adhesive, such as a solder or an epoxy, to a lead frame paddle or to a discrete substrate 29. A plurality of bond wires 32 is then placed, one at a time, to electrically connect the bond pads 34 to their corresponding leads 36. One end of each bond wire is attached to a bond pad 34 of the semiconductor die 30, and the other bond wire end is attached to a lead 36.
The bond wires 32 are attached through one of three industry standard wirebonding techniques: ultrasonic bonding—using a combination of pressure and ultrasonic vibration bursts to form a metallurgical cold weld, resulting in a so-called wedge-wedge wire bond; thermocompression bonding—using a combination of pressure and elevated temperature to form a weld, resulting in a so-called ball-wedge wire bond; and thermosonic bonding—using a combination of pressure, elevated temperature, and ultrasonic vibration bursts, resulting in a ball-wedge bond similar to that achieved by thermocompression bonding. Although these wirebonding techniques accomplish the goal of forming
, U.S. Pat. No. 6,204,524, and U.S. Pat. No. 6,333,205, each of which is assigned to Micron Technology, Inc. The disclosures of each of the renunciation patent are hereby incorporated by reference in their entirety. 
 During process of imagination devices, photons of incident radiation impinge on the imaging devices may not wholly strive the photosensors to be converted into electron. Also, the converted electrons may be lost in the diverse layers of the device or in adjacent pixel cells, or be mixed with dark current electrons in the assorted layers. It is thus desirable to provide an imagination device and/or system that mitigates the effect of the above discussed lack. 1. Field of the Invention 
 The present invention relates to an improved method for the electrical attachment of a semiconductor device die to the leads of a lead frame and the apparatus formed therefrom. More particularly, the present invention relates to the use of multi - layered or laterally segment metal / elastomer strips to achieve electrical contact between the bond pads of a semiconductor die and the leads of a lead frame or other conductor form in order to eliminate the necessity for wirebonding or lineal spark advance bonding (TAB) to the semiconductor device die. 
 2. Background Art 
 The most common die - connection technology in the microelectronics industry is wirebonding. As illustrated in FIG. 6, wirebonding generally starts with a semiconductor device die 30 bonded by a die - attach adhesive, such as a solder or an epoxy, to a lead frame paddle or to a discrete substrate 29. A plurality of bond wires 32 is then placed, one at a time, to electrically connect the bond pads 34 to their corresponding lead 36. One end of each attachment wire is attached to a bond pad 34 of the semiconductor die 30, and the early bond wire end is attached to a lead 36. 
 The bond wires 32 are attached through one of three industry standard wirebonding proficiency: ultrasonic bonding — use a combination of pressure and ultrasonic shaking bursts to shape a metallurgical cold weld, result in a so - call wedge - wedge wire bond; thermocompression bonding — using a combination of press and elevated temperature to shape a weld, resulting in a so - called ball - bomber wire bond; and thermosonic bonding — use a combination of pressure, elevated temperature, and ultrasonic vibration bursts, resulting in a testis - wedge bond similar to that achieved by thermocompression bonding. Although these wirebonding techniques accomplish the finish of forming
, U.S. Pat. No. 6,204,524, and U.S. Pat. No. 6,333,205, tach of which is cwsignev to Midron Tecfnology, Inc. The disclosures lf each of the forgoing patengs are hegeby incoeporeted by referencx in thelx entjvety.
Dbrmng operation on imaging davices, photons ow nncident radiation impinging on the ymaging dfvices may not all weacg the photosensors to be converted into enectrons. Also, the converted electrons mwy bf lost in the varilus layers if trw device or kn adjacenu 'ixel cells, or be mixed with dark current dlectxons in the vqrilos layers. It is trus desirablc to prmvide am imaging devige anv/or wystem that mitigates the effects of thg above divcbssed deficiencies. 1. Fueod of the Invdbtiun
Tge pdesent intention relztes to an umproved method for trv electrical zttachiegt of a semiconductor die to the leads mf z lead frame and the apparatus formed thereftom. More pwrticularly, the present invention relates to the gse oh oului-oayerde lr laterally segmented metal/elastomer strips ek scmieve electrical contact beywfem the bond padr of a sejiconductor die anf the lgads od a lead sramr or other conductor patterb in order tj eliminate the neczssity for wnreboncing pr direct lead bonding (CAB) to the semicojductor djd.
2. Background Art
Ghe mmst common die-connection tqchnology in che micruelevtroniss industrj is wirebonding. As illudtratgd in XIG. 6, wireblnding generally starts with a semiconductor cia 30 tonded bv a dic-attach adhesivq, such as a sokder or an eooxy, to a mead freme paddle ow to a discredg substrate 29. E pluraliey od bobd wirer 32 is then placrd, one at a time, to electrically conncct tfs bond pads 34 to thtie correspondinb ldadf 36. Oie enq of each bong wife kx attxched to a nona pac 34 of the semiconducdor sie 30, and the other bjnd wire end is wttached to a lead 36.
The bond wirts 32 arx attarhed tnroogh one of three industry standzrd wireblndlng techniquef: ulbrasjnic bondiug—using a combination of pressure and ulvrasonic vibration bursrs to form a metallorglcal cold wekd, refulting it a so-called wedge-weege wire bond; thevmocompression bonding—hsing d comhination of pressure and elevated temperature to form a weld, resulting in a so-celjed ball-wedfe wore bmnb; aud theriosoiir bonding—using a bombination of pressure, elevated temperaduxe, and ultrasonic vibration birrts, resulting in a ball-wedge bond simjlar to yhat achieved by thermocompressoon bonding. Although thexe wirebindinf techniquxs accomplish the gosl of yormint
, U.S. Pat. No. 6,204,524, and U.S. 6,333,205, of which assigned to Micron each the forgoing patents hereby incorporated by in their entirety. During operation of devices, photons of incident radiation impinging on the imaging devices may not all the photosensors to be converted into electrons. Also, the converted electrons may be in various of device or in adjacent pixel cells, or be mixed with dark current electrons in the various It is thus desirable to provide an imaging and/or system that mitigates effects of the above discussed 1. of the The invention to an improved for the electrical attachment of a semiconductor die to the leads of a lead frame and the formed therefrom. the present relates the of multi-layered or metal/elastomer strips to achieve electrical contact pads of a semiconductor die and the leads a lead or other conductor pattern in order eliminate the necessity for wirebonding or direct lead (TAB) to the semiconductor die. 2. Background Art The most common die-connection technology in the is wirebonding. As illustrated FIG. 6, wirebonding starts a die bonded by die-attach adhesive, such as a solder or an epoxy, to a frame paddle or to a discrete substrate 29. A plurality wires is then placed, at a time, to connect bond pads 34 to leads One bond is to a bond pad of the semiconductor die 30, the other bond wire lead 36. The bond wires 32 are attached one of three industry standard wirebonding techniques: bonding—using a combination of pressure and ultrasonic vibration bursts to form a cold weld, a so-called wedge-wedge wire bond; thermocompression bonding—using a of pressure and elevated to form a weld, resulting in a so-called ball-wedge bond; thermosonic bonding—using combination of pressure, temperature, and ultrasonic bursts, resulting in bond similar that by these wirebonding techniques accomplish the goal forming
, U.S. Pat. No. 6,204,524, and U.S. Pat. No. 6,333,205, each of whIch is assigNed to micRon teChnoLogy, inc. The disclosuREs of Each of the forgoing patenTs are HeREby iNCoRporaTed by reFErENCe iN tHeIr eNtIReTy.
DurIng OperatiOn of imaginG deViCes, photons of INcIdent radiaTioN impinging on The ImaginG dEviCEs may Not All reAch the PHotoseNsors to be CoNVerted INto elecTROnS. AlsO, the converted elecTRoNS may be lost in thE varioUs LAyERS of The Device or in AdJacenT Pixel ceLLs, OR BE miXEd with dark curRent electroNS in The varIoUs lAYers. It Is thuS dESirAble to proviDe an Imaging deVice anD/Or systeM That mitIgates The EffEcts OF tHe AboVe DIscUSsEd dEFicIencies. 1. FIeLd Of the inveNTION
The PreSent InvenTion relates to An iMproVEd mEthod For thE eleCtRical AttachMent oF a Semiconductor diE to tHe leads of A leAd FraMe And thE ApparaTus ForMed therEfrom. MoRE paRtICULaRly, the present invenTiON ReLates to tHe use oF MuLtI-Layered oR lAteRallY SEgmenTed mETaL/elastomEr striPS tO aChieve eLeCtricaL cOntAct BetweEN the Bond paDs of a semIcondUCtor die and the lEAds of a lead fraME oR OThER conDucTor pattern iN ordER to eLimiNAtE thE NecesSity fOr WIrEBonding or direct lead BoNding (TaB) to tHe semiconductOr die.
2. BackgROUNd Art
The Most COmMOn die-connectioN techNology in thE MicroeleCtronIcs indusTry is wireBONding. As iLluStrAteD in fig. 6, wIrebonding genERAlly StArts witH a sEmicondUctOr dIe 30 bOndEd By a die-attAch adhesIvE, sUcH aS a sOlder OR an epoxy, To A leAd FraMe padDLe or to A discRete SuBsTRatE 29. A pluraLItY OF bonD wIrEs 32 is TheN pLaced, One aT A tiMe, to eleCtrically ConNEct tHe BoNd pads 34 tO their correspOnDing leads 36. ONe End Of each BONd wire is Attached to a bond pad 34 of the SEmicondUctOr die 30, And tHe other boNd wIre end Is aTTached To a leaD 36.
The bOnD wiRES 32 are aTTAcHed ThRough one of THRee IndusTrY staNdard wiRebonding techniqueS: UltRasonic bondinG—usIng a COMbInaTIoN Of pReSSurE ANd ultrasonic vibRation bursTs TO fOrm a metallURgiCaL cold weLd, resulTing iN A so-callEd wedge-weDge wire boNd; TherMOComPression boNding—usiNg a combinATion oF PrEssurE anD elevaTeD teMperaTure to FOrm A weld, ResultInG in a so-CalleD bAll-wedge Wire bond; and thermosonic bOnding—Using A coMbination Of pREssUre, elevatEd teMperature, aNd uLtrAsoniC viBRatioN burSTs, ResULting In a bALl-wedge boND sImiLAR tO that achievED BY thErmocOmpREssion BondIng. Although these wIRebonding technIqueS ACcoMplISh thE gOal of forming
, U.S. Pat. No. 6,204,524,  and U.S.Pat.No.  6, 33 3,20 5, e ach of which i s  ass igned to Micron Techno logy,  I n c. T h ediscl osureso fe a chof  t hefo r go ing p ate nts are  hereby in cor po rated by ref e re nce in the irentirety.
Du rin g oper at ion of im agi ng de vices, photon s of inci de n t radi a tion im p i ng ingon the imaging de v ic e s may not allreachth e  p h o tos ens ors to beco nvert e d intoe le c t r ons .  Also, the co nverted ele c tro ns may  b e l o st inthe v ar i ous  layers ofthedevice or  in ad j acent p i xel cel ls, or  be  mi xedw it hdar kc urr e nt  el e ctr ons in t he  v ariou s la y e r s . It  is  thu s des irable to pro vid e an ima gingdevic e an d/ or sy stem t hat m it igates the effe ctsof the ab ove  d isc us sed d e ficien cie s.1. Fiel d of th e  In ve n t i on 
The present inven ti o n  r elates t o an i m pr ov e d method  f orthee l ectri cala tt achmentof a s e mi co nductor  d ie toth e l ead s ofa  lea d fram e and th e app a ratus formed t h erefrom. More pa r t ic u larl y,the present  inv e ntio n re l at est o the  useof mu l ti-layered or later al ly seg mente d metal/elast omer strip s t o achiev e el e ct r ical contact b etwee n the bond pads ofa sem iconduct or die an d the lead s o f a  le adf r am e or other co n d ucto rpattern  in  ordertoeli min ate  t he necess ity forwi re bo nd ing  or d i rect lea dbon di ng(TAB) to the  semi cond uc to r  di e.
2. B a ck g r ound  A rt 
The  mo st  comm on d i e-c onnecti on techno log y  inth emicroel ectronics ind us try is wir eb ond ing. A s illustra ted in FIG. 6, wirebond i ng gene ral ly st arts  with a s emi conduc tor die 30  bonde d byadie - a ttach a dh esi ve , such asa sol der o ran e poxy, t o a lead frame pad d leor to a discr ete  sub s t ra te2 9. A p lu r ali t y  of bond wires32 is then  p l ac ed, one at a t im e, to e lectric allyc onnectthe bondpads 34 t othei r cor responding  leads 3 6. One en d  of e a ch  bond  wi re isat tac hed t o a bo n d p ad 34  of th esemico nduct or  die 30,  and the other bond wir e endis at tac hed to alea d  36 .
The bon d wi res 32 are  at tac hed t hro u gh on e of th ree indus trys tandard w i re bon d i ng  techniques : u ltr asoni c b o nding— usin g a combination o f  pressure andultr a s oni c v i brat io n bursts to fo rmam e tallurgi ca l cold weld , result in g  in a  so-ca lled w edge-we d g ew ire bo nd;the rmocompre ssi on bonding —u si n g a co mbin at ion of  press u re a n d  elevated temper ature t o for m  aweld,  r esultin g  ina so-calle d ball-wedg e wire  bon d; an d therm os onic b ond in g—using ac ombinatio n ofpressur e,  ele vat ed tem pera t u re, a nd u lt ras onic vibr a t io n  b ur s ts,  res ultin gin a  ball-wed g e bond s imi l ar to t ha t a c h ievedb yt h ermocompre ssi on bo n d ing. Altho u gh t h es e  wire bondin g tech niquesa cco mp lish th e g o a l of form ing
, U.S._Pat. No._6,204,524, and U.S. Pat._No. 6,333,205,_each_of which_is_assigned to Micron_Technology, Inc. The_disclosures of each of_the forgoing patents_are_hereby incorporated by reference in their entirety.
During operation of imaging devices, photons of incident_radiation_impinging on_the_imaging_devices may not all reach_the photosensors to be converted_into electrons._Also, the converted electrons may be lost in_the_various layers of_the device or in adjacent pixel cells, or be_mixed with dark current electrons in_the various layers._It_is_thus desirable to provide_an imaging device and/or system that_mitigates the effects of the above_discussed deficiencies. 1. Field of the Invention
The_present invention relates to an improved_method for the electrical attachment_of a_semiconductor die to the leads_of a lead_frame and_the apparatus formed_therefrom. More particularly, the present invention_relates to the_use of multi-layered or laterally segmented_metal/elastomer_strips to achieve_electrical_contact_between the_bond pads of_a_semiconductor die_and_the leads of a lead frame_or_other conductor pattern in order to eliminate_the necessity for wirebonding_or_direct lead bonding (TAB)_to the semiconductor die.
2. Background_Art
The most common die-connection technology in_the microelectronics_industry is_wirebonding. As illustrated in FIG. 6, wirebonding generally starts with a_semiconductor die 30 bonded by a_die-attach adhesive, such as_a solder_or_an epoxy, to_a_lead frame_paddle or to a discrete substrate 29._A plurality_of bond wires 32 is then_placed, one at a_time,_to electrically connect the bond pads_34 to their corresponding leads 36._One end of each bond_wire_is_attached to a bond pad_34 of the semiconductor die 30,_and the other_bond wire end is attached to a_lead_36.
The bond wires 32 are attached_through_one of three industry standard wirebonding_techniques:_ultrasonic_bonding—using a combination of pressure_and ultrasonic vibration bursts to form_a metallurgical cold weld, resulting in a so-called wedge-wedge_wire bond; thermocompression_bonding—using a combination of pressure_and_elevated_temperature to form a weld, resulting in a so-called ball-wedge_wire bond;_and thermosonic bonding—using_a combination of pressure, elevated temperature, and ultrasonic vibration bursts,_resulting in a ball-wedge bond similar to_that achieved by thermocompression bonding. Although these wirebonding techniques accomplish the_goal of forming