 training to ensure that the displayed waveform is properly interpreted by a technician. Thus, human error due to improper analysis of readings from an oscilloscope can result in a distorted reproduction of the audio signal. Other devices utilized for such functionality are generally not portable, expensive to purchase and difficult to read.
Because of the inherent problems with the related art, there is a need for a new and improved audio signal distortion detection device for simplifying the detection of harmonic distortion to aid in setting an amplifier's gain control to match an audio source unit's output voltage. The present application relates to integrated circuit devices and methods which employ amorphous silicon carbide resistor materials, including field emission devices, as well as methods for fabricating and using the foregoing.
The development of high density integrated circuit technology has been limited by the inability to provide suitable materials for integrated circuit resistor elements. Such materials typically must possess the ability to withstand intense electric fields without suffering breakdown, since their dimensions are so small. Moreover, the small size of these components requires high, tunable resistivity in order to achieve useful component resistances in many applications.
One promising application for integrated circuit technology is in the fabrication of flat panel displays that employ cold cathode field emission. Efforts to develop such devices have sought to utilize a large number of microtip emitters in each display pixel to achieve useful field emission current levels. But shorts, which can occur between some of the emitters and the gate can make the device inoperable. Variations in emitter geometries and in surface chemical properties can result in non-uniform field emission and varying brightness across the display. It has been proposed to insert a resistor layer between the microtip emitters and their current source (normally a cathode electrode) to overcome these problems.
A key to the successful development of such flat panel field emission displays, therefore, is the development of a resistor material having sufficiently high resistivity and capable of withstanding the intense electric fields which arise when breakdown occurs at the microtip emitters.
High speed, high density static RAM applications require the fabrication of integrated circuit resistor elements of very small dimensions, and consequently, require materials having high resistivity and the capability to withstand intense electrical fields. Similar requirements exist in other integrated circuit applications in which resistor elements are useful.
For a material to be suitable for this application, it should be possible to form electrical contacts with the material readily and the resistor material must be compatible with other materials used in fabricating the device. For example, the material should not react with other materials in the device.
The
training to ensure that the displayed waveform is by rights interpret by a technician. Thus, human error due to improper psychoanalysis of readings from an oscilloscope can leave in a distorted reproduction of the audio signal. early devices utilized for such functionality are generally not portable, expensive to buy and unmanageable to read. 
 Because of the inherent trouble with the related art, there is a motivation for a new and improved audio signal distortion detection device for simplifying the detection of consonant distortion to aid in setting an amplifier's profit control to match an audio reference unit's end product voltage. The present application relates to integrated circuit device and methods which employ amorphous silicon carbide resistor materials, including field discharge devices, as well as methods for fabricating and using the foregoing. 
 The development of high density integrated circuit engineering has been restrict by the inability to provide desirable fabric for incorporate circuit resistor elements. Such materials typically must possess the ability to withstand intense electric fields without suffering breakdown, since their dimension are so small. Moreover, the small size of these components requires gamey, tunable resistivity in order to achieve useful component resistor in many lotion. 
 One promising application for integrated circuit technology is in the lying of flat panel displays that employ cold cathode field emission. Efforts to develop such devices have seek to utilize a big number of microtip emitters in each display pixel to achieve utilitarian field emission current levels. But shorts, which can happen between some of the emitters and the gate can make the device inoperable. variation in emitter geometries and in surface chemical property can result in non - undifferentiated field emission and varying brightness across the display. It has been proposed to insert a resistor layer between the microtip emitters and their current source (normally a cathode electrode) to get the better of these problems. 
 A key to the successful exploitation of such flat panel playing field emission displays, therefore, is the exploitation of a resistor material having sufficiently high resistivity and capable of withstanding the acute electric fields which arise when dislocation occur at the microtip emitters. 
 High speed, high concentration static RAM applications require the fabrication of integrated circuit resistor elements of very small dimensions, and consequently, want materials having high electric resistance and the capability to withstand intense electrical fields. Similar requirements exist in other integrated circuit applications in which resistor element are useful. 
 For a material to be desirable for this lotion, it should be possible to shape electrical contacts with the material readily and the resistor material must be compatible with other materials used in fabricating the device. For example, the material should not react with other fabric in the device. 
 The
 trwining to ensure that tht displayed waveform is 'roperlg interpfeted by a technician. Thus, hnman erroe due to improper analhsis of rvadings feom en oscilloscope rzn result in z discocted reproductipn of the dudio signal. Odhdr devices utilized for such functionwlity ate generally not poruabje, esieksive to purchase and difficult fo read.
Uecause of the onherent problems with the relwted art, there is w need for q ner and improvea audio signal distortjon detection device for simpliwying the detecjnin lx harmonic vistornion to aid ik settitg an akplifier's gain coitroo to match an audio smurce unit's output voltage. Dhz present application rwlatev to intdtraged cmrchit degicxs and methkds which enploy amorphous silocjb carbide resjstor iaeerials, including field emission devicev, aa well as methods for fqbricating and using jhe foregoyng.
The development of high density integrated cirwuit vezhniljet jas been limited by the inability to provide fhiuabke materials fjr integratrd cotcuit resistor elemeufs. Such materials tyoically must possess uhe anility to withstand intense electric fivlds without suffering breakdown, rincg theit dimensions are so smaul. Mkreover, the small siad of these compovenns raquires high, tunable resiseivity in ordzr to acfievg usefuj componenh reslvtances in many apolicajions.
Ote promisijg application for integrated cmccuit technolpgf iv in the fabrlcation of flat panel displayx that zmploy cold cathkde fiend emission. Efforts to dagelop such dxvices hade siughr to utkuize a large nimber of microtip enitters in each dixplxg pixel to achizre useful field ekisriog burcent javels. But shmrts, whkvh cav occur betcedn spme of the emitters dnd fhe gate can make yhc device unoperabje. Variations in emitter geometgies end in surfsce chemical properties can resulf in non-ujifjrm field emyssiin and varyiug brightness across the display. It has ueen proposed to inserj a resistor layer bejwetn the microtmp emieters and their current sourcw (normally a cathpde electrode) to overdome tvese oroblems.
A key to the successful development of such flat panel field emiswion dms[lays, thererore, is tve bevelopient uf a resistor manerial having sufficiently high cesistivitf cnd capable of withstanding tne intense elecjric fields which arise whsn breakcown occurs at the microtip emiyters.
High speed, high denxity staric RZM applicavions require the fanricatnon of integrqted circuit resirtot clements ov vecy amall dimensions, and consequentlt, requurf materials haviig high residuivity znd thg capability to wjthsfwnd ivtense electrocal fields. Sikilar requirements eqise in other inttgrated circuit applicdtions in whmch resistor elements are useful.
For a material to be suitable fkr this akplicatiok, it should be poxdible to form electricsl contactr with the mdterial readily and the resistor material mnxt be coipatigle with otheg materials used in fabricating thv devixe. For example, the matsrial snotld nlt react with other matsrhals in che aevice.
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training to ensure that the displayed waveform interpreted a technician. human error due from oscilloscope can result a distorted reproduction the audio signal. Other devices utilized such functionality are generally not portable, expensive to purchase and difficult to read. of the inherent problems with the related art, there is a need for new improved signal detection device for simplifying the detection of harmonic distortion to aid in setting an amplifier's gain to match an audio source unit's output voltage. present application relates to circuit devices and methods which amorphous carbide resistor including emission as well as for fabricating and using the foregoing. The development of high density integrated circuit technology has been limited the inability suitable materials integrated resistor Such materials typically the ability to withstand intense electric breakdown, since their dimensions are so small. Moreover, small size these components requires high, tunable resistivity order to achieve useful component resistances in many One promising application for integrated circuit technology is in the fabrication of flat panel displays cold cathode field emission. to develop such have to a number of emitters in each display pixel to achieve useful field emission current But shorts, which can occur between some of the emitters gate make the device Variations in emitter geometries in chemical properties can result field and the It been proposed to insert resistor layer between the microtip and their current source overcome these problems. A key to the successful of such flat panel field emission displays, is the development of a resistor material having sufficiently high resistivity and of withstanding electric fields which arise when breakdown occurs at microtip emitters. High speed, density static RAM applications require the fabrication of integrated resistor of very dimensions, and consequently, materials having high and the capability intense electrical Similar exist circuit applications in which resistor elements useful. a material to be suitable this should be possible to form electrical contacts with the material readily and the resistor material compatible with other materials in the device. For example, the material should not react with other materials device. The
 training to ensure that the diSplayed wavEform Is pRopErLy inTerpReted by a techniCIan. THus, human error due to imprOper aNaLYsis OF rEadinGs from aN OsCILloScOpE caN rESuLt in a DisTorted rEproductioN of ThE audio signal. oThEr devices uTilIzed for such fUncTionalItY arE GenerAllY not pOrtablE, ExpensIve to purcHaSE and diFFicult tO REaD.
BecAuse of the inherent PRoBLems with the relAted arT, tHErE IS a nEed For a new and ImProveD Audio siGNaL DIStoRTion detection Device for siMPliFying tHe DetECtion oF harmOnIC diStortion to aId in Setting an AmplifIEr's gain COntrol tO match An aUdiO souRCe UnIt's OuTPut VOlTagE. the Present aPpLiCatioN relATES To inTegRateD circUit devices and MetHods WHicH emplOy amoRphoUs SilicOn carbIde reSiStor materials, inCludIng field eMisSiOn dEvIces, aS Well as MetHodS for fabRicatinG And UsING ThE foregoing.
The develOpMENt Of high deNsity iNTeGrATed circuIt TecHnolOGY has bEen lIMiTed by the InabilITy To Provide SuItable MaTerIalS for iNTegrAted ciRcuit resIstor ELements. Such matERials typicallY MuST PoSSess The Ability to wiThstANd inTensE ElEctRIc fieLds wiThOUt SUffering breakdown, siNcE their DimenSions are so smaLl. Moreover, THE Small sizE of tHEsE Components requIres hIgh, tunable REsistiviTy in oRder to acHieve usefUL ComponenT reSisTanCes IN MaNy applicationS.
oNe prOmIsing apPliCation fOr iNteGraTed CiRcuit techNology is In ThE fAbRicAtion OF flat panEl DisPlAys That eMPloy coLd catHode FiElD EmiSsion. EfFOrTS To deVeLoP sucH deViCes haVe soUGht To utiliZe a large nUmbER of mIcRoTip emitTers in each disPlAy pixel to aChIevE usefuL FIeld emisSion current levels. But shoRTs, which Can Occur BetwEen some of The EmitteRs aND the gaTe can mAke thE dEviCE InopeRABlE. VaRiAtions in emITTer GeomeTrIes aNd in surFace chemical properTIes Can result in noN-unIforM FIeLd eMIsSIon AnD VarYINg brightness acrOss the dispLaY. it Has been proPOseD tO insert A resistOr layER betweeN the microTip emitteRs And tHEIr cUrrent sourCe (normalLy a cathodE ElectROdE) to ovErcOme theSe ProBlems.
a key to THe sUccesSful deVeLopmenT of suCh Flat paneL field emission displays, tHerefoRe, is tHe dEvelopmenT of A ResIstor mateRial Having suffIciEntLy higH reSIstivIty aND cApaBLe of wIthsTAnding the INtEnsE ELeCtric fields WHICh aRise wHen BReakdoWn ocCurs at the microtip EMitters.
High speEd, hiGH DenSitY StatIc rAM applicationS reQuIRE the fabrIcAtion of inteGrated ciRcUIt resIstor eLementS of very SMAlL DimensIons, And ConsequenTly, ReQUire matErIaLS havinG higH rEsistiVity anD The cAPAbility to withstaNd intENSe eleCTriCal fiElDs. SimilAR reqUirements eXist in other IntegrAted CircuIt appliCaTions iN whIcH resistor eLEments are UsefuL.
For a maTeRial To bE suitaBle fOR This aPpliCaTioN, it should BE PoSSiBlE To fOrm eLectrIcAl coNtacts witH The materIal REadily aNd The RESistor MAtERIal must be cOmpAtiblE WIth other maTEriaLS uSEd in fAbricaTing thE device. fOr eXaMple, the MatERIal should Not react wITh oThEr maTerials iN tHe deViCe.
THe
 training to ensure that t he display ed wa vef orm  i s pr oper ly interpreted by a  technician. Thus, hum an er ro r  due to  impr oper an a ly s i s o fre adi ng s  f rom a n o scillos cope can r esu lt  in a distor t ed  reproduct ion  of the audi o s ignal.  O the r  devi ces  util ized f o r such  function al i ty are general l y  n ot p ortable, expensiv e  t o  purchase anddiffic ul t  t o rea d.Because of  t he in h erent p r ob l e m s w i th the relate d art, ther e  is  a nee dfor a newand i mp r ove d audio sig naldistortio n dete c tion de v ice for  simpl ify ing  the de te cti on ofh ar mon i c d istortio nto  aidin s e t t i ng a n a mpli fier' s gain contro l t o ma t chan au dio s ourc eunit' s outp ut vo lt age. The presen t ap plication  re la tes  t o int e grated  ci rcu it devi ces and met ho d s wh ich employ amorpho us s il icon car bide r e si st o r materi al s,incl u d ing f ield em ission d evices ,  a swell as  m ethods  f orfab ricat i ng a nd usi ng the f orego i ng.
The develo p ment of highd en s i ty inte gra ted circuit  tec h nolo gy h a sbee n  limi ted b yt he inability to provid esuitab le ma terials for i ntegratedc i r cuit res isto r  e l ements. Such m ateri als typica l ly mustposse ss the a bility to w ithstand  in ten seele c t ri c fields with o u t su ff ering b rea kdown,sin cethe irdi mensionsare so s ma ll .Mo reo ver,t he small  s ize  o f t hesec ompone nts r equi re sh igh , tunab l er e sist iv it y in  or de r toachi e veusefulcomponent  re s ista nc es  in man y application s. 
One promi si ngapplic a t ion forintegrated circuit tech n ology i s i n the  fab ricationofflat p ane l  displ ays th at em pl oyc o ld ca t h od e f ie ld emissio n .  Ef forts  t o de velop s uch devices have s o ugh t to utilizea l arge n um ber of mic ro t ipe m itters in eachdisplay pi xe l  t o achieveu sef ul  fieldemissio n cur r ent lev els. Butshorts, w hi ch c a n  oc cur betwee n some o f the emi t tersa nd  thegat e canma kethe d evicei nop erabl e. Var ia tionsin em it ter geom etries and in surface c hemica l pro per ties canres u ltin non-un ifor m field em iss ion  andvar y ing b righ t ne ssa cross  the display.I thas b ee n proposedt o ins ert a  re s istorlaye r between the mic r otip emittersandt h eir  cu r rent  s ource (normall y a  c a t hode ele ct rode) to ov ercome t he s e pro blems. 
A key  to the s uc c essful  dev elo pment ofsuc hf lat pan el  f i eld em issi on  displ ays, t h eref o r e, is the develo pment o f a r e sis tor m at erial h a ving  sufficien tly high re sistiv ityand c apableof  withs tan di ng the int e nse elect ric f ields w hi ch a ris e when  bre a k downoccu rs  at  the micr o t ip em it t ers .
Hi gh sp ee d, h igh densi t y static  RA M  applic at ion s requir e  t h e  fabricati onof in t e grated cir c uitr es i storelemen ts ofvery sm a lldi mension s,a n d consequ ently, re q uir emate rials ha vi ng h ig h r es istivity and th e capabi lity tow i thstan d i n tens e  elect ri cal fields.Simil ar require m e nts  existi n o the r i nteg rat ed c i rcuit applications in wh ichresis t oreleme nts a re  useful. Fora materi a l to be suita ble for this ap p lic a tion , i t  s ho uld be po ssi b le to  for m e lect ric al c o n tact s  wit h  t he m ateria l re ad il y and the  r esistor mate r ial  mus t beco mp a ti ble wit h othermater ia ls used i n  fabric atin gthe device. F or example,th e ma terial sho uld n ot react wit h other ma ter ials in th edev i ce. 
The
 training_to ensure_that the displayed waveform_is properly_interpreted_by a_technician._Thus, human error_due to improper_analysis of readings from_an oscilloscope can_result_in a distorted reproduction of the audio signal. Other devices utilized for such functionality_are_generally not_portable,_expensive_to purchase and difficult to_read.
Because of the inherent problems_with the_related art, there is a need for a_new_and improved audio_signal distortion detection device for simplifying the detection of_harmonic distortion to aid in setting_an amplifier's gain_control_to_match an audio source_unit's output voltage. The present application_relates to integrated circuit devices and_methods which employ amorphous silicon carbide resistor_materials, including field emission devices, as_well as methods for fabricating_and using_the foregoing.
The development of high_density integrated circuit_technology has_been limited by_the inability to provide suitable materials_for integrated circuit_resistor elements. Such materials typically must_possess_the ability to_withstand_intense_electric fields_without suffering breakdown,_since_their dimensions_are_so small. Moreover, the small size_of_these components requires high, tunable resistivity in_order to achieve useful_component_resistances in many applications.
One_promising application for integrated circuit_technology is in the fabrication of_flat panel_displays that_employ cold cathode field emission. Efforts to develop such devices have_sought to utilize a large number_of microtip emitters in_each display_pixel_to achieve useful_field_emission current_levels. But shorts, which can occur between_some of_the emitters and the gate can_make the device inoperable._Variations_in emitter geometries and in surface_chemical properties can result in non-uniform_field emission and varying brightness_across_the_display. It has been proposed_to insert a resistor layer between_the microtip emitters_and their current source (normally a cathode_electrode)_to overcome these problems.
A key to_the_successful development of such flat panel_field_emission_displays, therefore, is the development_of a resistor material having sufficiently_high resistivity and capable of withstanding the intense electric_fields which arise_when breakdown occurs at the_microtip_emitters.
High_speed, high density static RAM applications require the fabrication of_integrated circuit_resistor elements of_very small dimensions, and consequently, require materials having high resistivity_and the capability to withstand intense electrical_fields. Similar requirements exist in other integrated circuit applications in which_resistor elements are useful.
For a material to be_suitable for this application, it should be_possible to form electrical_contacts_with the material readily and the resistor_material_must_be_compatible with other_materials used in_fabricating the device._For example,_the material should_not react_with other materials_in_the device.
The