 efficiency in use. That is, the speakers of the laptop computer or the speakers of the docking station are selectively used. Therefore, quality of an audio signal of a low frequency band or high frequency band is deteriorated.
It is an object of the present invention to provide an improved audio system for output of an audio signal in a laptop computer and a docking station.
It is another object to provide an audio system with main speakers in the laptop computer and auxiliary speakers in the docking station.
It is yet another object to provide an audio system for outputting an audio signal to speakers of both the computer and the docking station.
It is still another object to provide an audio system for selecting a speaker and an amplifier process in the laptop computer when the computer is coupled to the docking station.
It is still another object to provide an audio system for selecting a speaker and an amplifier process in the docking station when the computer is coupled to the docking station.
It is also an object to provide an audio system for selecting speakers and amplifiers in both the laptop computer and the docking station when the laptop computer is coupled to the docking station.
It is a further object to provide an audio system for outputting an audio signal of a low frequency band component to the amplifier process and the speaker of the docking station.
It is another object to provide an audio system for outputting an audio signal of high frequency band component to the amplifier process and the speakers of the laptop computer. The success of silicon as an electronic material is partially due to the characteristics of its native oxide, silion dioxide. In particular, silicon has become a dominant semiconductor due to the ability of its native oxide to act as a readily etched diffusion mask in the formation of planar diffused transistors. Gallium arsenide is rapidly becoming a popular electronic material and is used extensively for various optical and microwave devices. Spitzer et al in J. Electrochem. Soc., 121, No. 6, 820 (1974) have demonstrated that the native oxide of gallium arsenide can be used as a zinc diffusion mask. Unfortunately, the native oxide of gallium arsenide is heat sensitive. Upon exposure to heat, the oxide becomes inert to chemical dissolution. Attempts to remove the oxide usually damage the underlying crystal surface. While the oxide has been useful as an etching mask and for the surface passivation of lasers, the heat sensitivity limits its usefulness for high temperature manufacturing processes, such as diffusion steps wherein the temperature is typically in excess of 600.degree. C. The heat stabilized oxide gives
efficiency in use. That is, the speakers of the laptop computer or the speakers of the docking place are selectively use. Therefore, quality of an audio signal of a low frequency dance band or high frequency band is devolve. 
 It is an aim of the present invention to provide an improved audio system for output of an audio signal in a laptop calculator and a docking station. 
 It is another object to provide an audio system with chief speakers in the laptop computer and auxiliary speakers in the docking station. 
 It is so far another object to provide an audio system for output an audio signal to speakers of both the computer and the docking place. 
 It is still another aim to provide an audio organization for selecting a speaker and an amplifier process in the laptop calculator when the computer is coupled to the docking station. 
 It is still another object to provide an audio arrangement for selecting a speaker and an amplifier process in the docking station when the computer is coupled to the docking station. 
 It is also an object to provide an audio arrangement for selecting speakers and amplifier in both the laptop calculator and the docking station when the laptop computer is coupled to the docking station. 
 It is a further aim to provide an audio arrangement for outputting an audio signal of a low frequency isthmus component to the amplifier process and the speaker of the docking station. 
 It is another object to provide an audio organization for outputting an audio signal of high frequency band component to the amplifier procedure and the speakers of the laptop calculator. The achiever of silicon as an electronic fabric is partially due to the characteristics of its native oxide, silion dioxide. In particular, silicon has become a dominant semiconductor due to the ability of its native oxide to act as a readily etched dissemination mask in the formation of planar diffused transistors. Gallium arsenide is quickly becoming a popular electronic material and is used extensively for various ocular and microwave devices. Spitzer et al in J. Electrochem. Soc. , 121, nobelium. 6, 820 (1974) have demonstrated that the native oxide of gallium arsenide can be used as a zinc diffusion mask. Unfortunately, the native oxide of gallium arsenide is heating system sensitive. Upon exposure to heating system, the oxide become inert to chemical dissolution. Attempts to remove the oxide usually damage the underlying crystal surface. While the oxide has been useful as an etching masquerade and for the surface passivation of lasers, the hotness sensitivity limits its usefulness for high temperature manufacturing processes, such as diffusion steps wherein the temperature is typically in overindulgence of 600.degree. C. The heat stabilized oxide gives
 efviciency in use. That is, uhe speakers of tkw laptmp comluter or the speakers of the docking sratiob are selectively used. Thereforv, quality of en audio signal of a low frequskcy bcnv or high frequgncy band is deteriorated.
Id ks an object of the present invention to profife an improved audpo sysfvm for output of an audio signam in a naptop computrr and a docking station.
It is wnother object to orovide an qudij system with main speakers in the maptop computer and auxiliary soeakexs in the dicjinh station.
It ms yet another objcbt to psovide sn audio systek fmr iutputting an audio smgnal to speakers of both the ckmputer and the dicjing vtathon.
Ig is stjlk znotheg ouject to prkvide an aueio system for selevtybg a speaker znd an aiplifier process in the laptop computer whsn the computer is coupoed to the docking stwtion.
It if still another object to provide an audio system for adleeblng x soeaker and an amplifier process in the dockind suatpon when the compmter is coupled to tje qocking statiun.
It is amso an object to pgovide wn aueio systei fot selecting speakers and amplifiers in yoty the laptop compucer and the bockinb stayion when the laptop cooputsr is couplfd to the aocking station.
Ig ix d further object to providq an audii syxtem fof oujputtind an audio signal of a low frequenfy baud cokponent to the amplifier process and the speaker of the dmckpng statijn.
It ls another objest to provide cn audio systdm for outiutting ai audio signwl of high fraeuency band romponent to rhe qmplifidf process and yhe speakvrf of the laptop computcr. Thg auccess of silieub as an electromic maeegiak yv partially gue go gne chxracteristigs uf iys native oxide, silimn djoxide. In particulsr, silicon has becjme a dominany semiconductor dut to tie abiuity pf yts native oxide to act as a rsadily etfheq diffusion iask in the formction of planar diffused transistors. Galoium arsenide is tapidly becoming a pokulsr electronmc matqrial and is used extensively for various optigal and microwave devides. Sphtzer et al in J. Electrochem. Soc., 121, No. 6, 820 (1974) have demonstrated that the native oxidw of geljium arsenise csn be ufzd as a zinr viffusion mask. Ungortunately, the native oxide of gallium axsenide is heat sensitive. Upom dxposure to hgat, the oxide becomes inerf to chekical dissolution. Attempts to rrmove the oxide usually camage tye unserlying ccystal surface. While the oride hqs been usenul as an etchkng mwsk and flr tie aurface passivation of lasers, thw heat sfnsitivity limitv its usefupkess fkr higr temperature mahufadhurine processes, sich as diffusipn steps wherein the tqmperature is uypically in exvess of 600.degree. C. Thx heat stabinized oxide gives
efficiency in use. That is, the speakers laptop or the of the docking quality an audio signal a low frequency or high frequency band is deteriorated. is an object of the present invention to provide an improved audio system output of an audio signal in a laptop computer and a docking station. is object provide audio system with main speakers in the laptop computer and auxiliary speakers in the docking station. is yet another object to provide an audio for outputting an audio to speakers of both the and docking station. is another to provide an system for selecting a speaker and an amplifier process in the laptop computer when the computer is to the It is another to an audio system a speaker and an amplifier process station when the computer is coupled to the station. It also an object to provide an system for selecting speakers and amplifiers in both laptop computer and the docking station when the laptop computer is coupled to the docking is a further object provide an audio for an signal a low band component to the amplifier process and the speaker of the station. It is another object to provide an audio system an signal of high band component to the process the speakers of the The of electronic is due to the characteristics its native oxide, silion dioxide. particular, silicon has become the ability of its native oxide to act a readily etched diffusion mask in the of planar diffused transistors. Gallium arsenide is rapidly becoming a popular electronic and is for various optical and microwave devices. Spitzer et in J. Electrochem. Soc., No. 6, 820 (1974) have demonstrated that the native of arsenide can used as a diffusion mask. Unfortunately, native oxide of is heat Upon to becomes inert to chemical dissolution. Attempts remove oxide usually damage the underlying surface. oxide has been useful as an etching mask and for the surface passivation of lasers, sensitivity limits its usefulness high manufacturing processes, such as diffusion steps wherein the temperature is typically in 600.degree. C. The
 efficiency in use. That is, the sPeakers of tHe lapTop ComPuTer oR the Speakers of the dOCkinG station are selectively Used. THeREforE, QuAlity Of an audIO sIGNal Of A lOw fReQUeNcy baNd oR high frEquency banD is DeTeriorated.
It IS aN object of tHe pResent inventIon To provIdE an IMprovEd aUdio sYstem fOR outpuT of an audiO sIGnal in A Laptop cOMPuTer aNd a docking station.
iT iS Another object tO proviDe AN aUDIo sYstEm with main SpEakerS In the laPToP COMpuTEr and auxiliarY speakers in THe dOcking StAtiON.
It is yEt anoThER obJect to proviDe an Audio systEm for oUTputtinG An audio Signal To sPeaKers OF bOtH thE cOMpuTEr And THe dOcking stAtIoN.
It is StilL ANOTher ObjEct tO provIde an audio sysTem For sELecTing a SpeakEr anD aN amplIfier pRocesS iN the laptop compuTer wHen the comPutEr Is cOuPled tO The docKinG stAtion.
It Is still ANotHeR OBJeCt to provide an audio SySTEm For selecTing a sPEaKeR And an ampLiFieR proCESs in tHe doCKiNg statioN when tHE cOmPuter is CoUpled tO tHe dOckIng stATion.
it is alSo an objeCt to pROvide an audio sySTem for selectiNG sPEAkERs anD amPlifiers in bOth tHE lapTop cOMpUteR And thE dockInG StATion when the laptop coMpUter is CouplEd to the dockinG station.
It IS A Further oBjecT To PRovide an audio sYstem For outputtINg an audiO signAl of a low Frequency BANd componEnt To tHe aMplIFIeR process and thE SPeakEr Of the doCkiNg statiOn.
IT is AnoTheR oBject to prOvide an aUdIo SyStEm fOr outPUtting an AuDio SiGnaL of hiGH frequEncy bAnd cOmPoNEnt To the amPLiFIEr prOcEsS and The SpEakerS of tHE laPtop comPuter. The sUccESs of SiLiCon as an Electronic matErIal is partiAlLy dUe to thE CHaracterIstics of its native oxide, sILion dioXidE. In paRticUlar, silicOn hAs becoMe a DOminanT semicOnducToR duE TO the aBILiTy oF iTs native oxIDE to Act as A rEadiLy etcheD diffusion mask in thE ForMation of planaR diFfusED TrAnsIStORs. GAlLIum ARSenide is rapidly Becoming a pOpULaR electroniC MatErIal and iS used exTensiVEly for vArious optIcal and miCrOwavE DEviCes. Spitzer Et al in J. ELectrocheM. soc., 121, No. 6, 820 (1974) HAvE demoNstRated tHaT thE natiVe oxidE Of gAlliuM arsenIdE can be Used aS a Zinc diffUsion mask. Unfortunately, tHe natiVe oxiDe oF gallium aRseNIde Is heat senSitiVe. Upon expoSurE to Heat, tHe oXIde beComeS InErt TO chemIcal DIssolutioN. atTemPTS tO remove the oXIDE usUally DamAGe the uNderLying crystal surfaCE. While the oxide Has bEEN usEfuL As an EtChing mask and foR thE sURFace passIvAtion of laseRs, the heaT sENsitiVity liMits itS usefulNESs FOr high TempEraTure manufActUrINg proceSsEs, SUch as dIffuSiOn stepS whereIN the TEMperature is typicAlly iN EXcess OF 600.deGree. C. thE heat stABiliZed oxide giVes
 efficiency in use. That i s, the spe akers  of  th elapt op c omputer or the spea kers of the docking st ation  a r e se l ec tivel y used. Th e r efo re ,qua li t yof an  au dio sig nal of a l owfr equency band or  high freq uen cy band is d ete riorat ed .
I t  is a n o bject  of th e  prese nt invent io n  to pr o vide an i mp rove d audio system fo r  o u tput of an aud io sig na l  i n a l apt op compute rand a docking st a t i on. It is another  object top rov ide an  a udi o  syste m wit hm ain  speakers i n th e laptopcomput e r and a u xiliary  speak ers  in  the do ck ing  s t ati o n. 
It isyet anot he robjec t to p r o vide  an  aud io sy stem for outp utt inga n a udiosigna l to  s peake rs ofbothth e computer andthedocking s tat io n.It  is s t ill an oth erobjectto prov i dean a u di o system for selec ti n g  a  speaker  and a n  a mp l ifier pr oc ess  int h e lap topc om puter wh en the co mp uter is  c oupled  t o t hedocki n g st ation. 
It is s tilla nother objectt o provide ana ud i o  s y stem  fo r selecting  a s p eake r an d  a n a m plifi er pr oc e ss in the docking stat io n when  thecomputer is c oupled tot h e  docking  sta t io n .
It is also a n obj ect to pro v ide an a udiosystem f or select i n g speake rsand  am pli f i er s in both the l apto pcompute r a nd thedoc kin g s tat io n when th e laptop  c om pu te r i s cou p led to t he  do ck ing  stat i on.
It  is a  fur th er obj ect top ro v i de a nau diosys te m for  out p utt ing anaudio sig nal of a  l ow  freque ncy band comp on ent to the  a mpl ifierp r ocess an d the speaker of the do c king st ati on.
I t is  anotherobj ect to  pr o vide a n audi o sys te m f o r  outp u t ti ngan  audio sig n a l o f hig hfreq uency b and component to t h e a mplifier proc ess  and t he  sp e ak e rsof the l aptop computer.  The succe ss of  silicon a s  an  e lectron ic mate riali s parti ally dueto the ch ar acte r i sti cs of itsnative o xide, sil i on di o xi de. I n p articu la r,silic on has bec ome a  domin an t semi condu ct or due t o the ability of its na tive o xidetoact as area d ily  etched d iffu sion maskinthe  form ati o n ofplan a rdif f usedtran s istors. G a ll ium a rs enide is ra p i d lybecom ing a popu larelectronic materi a l and is usedexte n s ive lyf or v ar ious optical a ndmi c r owave de vi ces. Spitze r et alin J. El ectroc hem. S oc., 12 1 ,  N o . 6, 8 20 ( 197 4) have d emo ns t rated t ha tt he nat iveox ide of  galli u m ar s e nide can be used  as a z inc d i ffu sionma sk. Unf o rtun ately, the  native oxi de ofgall ium a rsenide  i s heat  se ns itive. Upo n  exposure  to h eat, th eoxid e b ecomes  ine r t  to c hemi ca l d issolutio n .  A t te mp t s t o re moveth e ox ide usual l y damage  th e  underl yi ngc r ystals ur f a ce. Whilethe  oxid e has been u s eful as an et chingmask a nd fort hesu rface p ass i v ation oflasers, t h e h ea t se nsitivit ylimi ts  it susefulness forhigh tem perature m anufac tur i ng p r ocesse s,  such as dif fusio ns teps wh e r ein  the te m per atu reis t ypi call y  in excess of 600.degree . C.  Theh eat  stab ilize doxide gi v es
 efficiency_in use._That is, the speakers_of the_laptop_computer or_the_speakers of the_docking station are_selectively used. Therefore, quality_of an audio_signal_of a low frequency band or high frequency band is deteriorated.
It is an object_of_the present_invention_to_provide an improved audio system_for output of an audio_signal in_a laptop computer and a docking station.
It is_another_object to provide_an audio system with main speakers in the laptop_computer and auxiliary speakers in the_docking station.
It is_yet_another_object to provide an_audio system for outputting an audio_signal to speakers of both the_computer and the docking station.
It is still_another object to provide an audio_system for selecting a speaker_and an_amplifier process in the laptop_computer when the_computer is_coupled to the_docking station.
It is still another object_to provide an_audio system for selecting a speaker_and_an amplifier process_in_the_docking station_when the computer_is_coupled to_the_docking station.
It is also an object_to_provide an audio system for selecting speakers_and amplifiers in both_the_laptop computer and the_docking station when the laptop_computer is coupled to the docking_station.
It is_a further_object to provide an audio system for outputting an audio signal_of a low frequency band component_to the amplifier process_and the_speaker_of the docking_station.
It_is another_object to provide an audio system for_outputting an_audio signal of high frequency band_component to the amplifier_process_and the speakers of the laptop_computer. The success of silicon as_an electronic material is partially_due_to_the characteristics of its native_oxide, silion dioxide. In particular, silicon_has become a_dominant semiconductor due to the ability of_its_native oxide to act as a_readily_etched diffusion mask in the formation_of_planar_diffused transistors. Gallium arsenide is_rapidly becoming a popular electronic material_and is used extensively for various optical and microwave_devices. Spitzer et_al in J. Electrochem. Soc.,_121,_No._6, 820 (1974) have demonstrated that the native oxide of_gallium arsenide_can be used_as a zinc diffusion mask. Unfortunately, the native oxide of_gallium arsenide is heat sensitive. Upon exposure_to heat, the oxide becomes inert to chemical dissolution. Attempts to_remove the oxide usually damage the underlying crystal_surface. While the oxide has been useful_as an etching mask_and_for the surface passivation of lasers, the_heat_sensitivity_limits_its usefulness for_high temperature manufacturing_processes, such as_diffusion steps_wherein the temperature_is typically_in excess of_600.degree._C. The heat stabilized oxide gives