 2, an underlying resist pattern 22 of the higher solubility rate and an overlying resist pattern 23 of the lower solubility rate are formed on a substrate 21. With method, however, when the ratio in the solubility rate between the upper and lower layers is small, dissolution of the upper resist pattern 23 proceeds in the course of dissolution of the lower resist pattern 22, introducing difficulties in obtaining a fine aperture width and in controlling the cross-sectional configuration as is the case with the method described above in (1).
With the method (2) it is also possible to laminate layers of resists of different molecular weights through utilization of the phenomenon that the solubility rate of a resist generally depends upon its molecular weight. In this instance, however, the molecular weight ratio that is feasible is limited and the underlying resist layer is readily dissolved during coating of the overlying resist layer, making it difficult to form, as a unitary structure, two layers of largely different solubility rates.
Furthermore, by reversing the relationship between the solubility rates of the underlying resist layer and the overlying resist layer formed on the substrate in the case of FIG. 2, that is, by selecting the solubility rate of the upper resist layer higher than the solubility rate of the lower resist layer, it is possible to obtain an upwardly tapered cross-sectional configuration. Also in this case, it is necessary, for easy control of the cross-sectional configuration, that the ratio between the solubility rates of the overlying and underlying layers.
It is therefore a first object of the present invention to provide a novel high-sensitivity positive resist mixture which obviates such defects of the conventional positive resists as described above and a patterning method which employs the novel positive resist mixture.
A second object of the present invention is to develop a developing method suitable for development of the novel positive resist mixture and a patterning method which employs the developing method.
A third object of the present invention is to provide a patterning method which employs the novel positive resist mixture and permits the formation of a fine pattern and at the same time high-precision control of its cross-sectional configuration. This invention relates to a method for identifying objects appearing at random positions, in random orientations, and at random times on an image window and having, on a surface facing the image window, an identification in the form of a field which includes on at least one data track contrasting symbols and a plurality of given contrasting line patterns, or a product identification code (PIC). The latter identifies the position and orientation of the data track(
2, an underlying resist pattern 22 of the higher solubility pace and an overlying resist design 23 of the lower solubility pace are formed on a substrate 21. With method acting, however, when the ratio in the solubility pace between the upper and lower layers is small, dissolving of the upper resist pattern 23 proceeds in the class of dissolution of the lower resist traffic pattern 22, introduce difficulties in obtaining a fine aperture width and in controlling the cross - sectional shape as is the case with the method described above in (1). 
 With the method acting (2) it is also possible to laminate layers of resists of different molecular weights through use of the phenomenon that the solubility pace of a resist generally depends upon its molecular weight. In this instance, however, the molecular weight unit ratio that is feasible is limited and the underlying resist layer is readily dissolve during coating of the overlying resist layer, making it difficult to form, as a unitary structure, two layers of largely different solubility rate. 
 Furthermore, by reversing the relationship between the solvability pace of the fundamental resist layer and the overlying resist layer form on the substrate in the case of FIG. 2, that is, by selecting the solubility rate of the upper resist level higher than the solubility rate of the lower resist layer, it is possible to obtain an upwardly tapered cross - sectional configuration. Also in this shell, it is necessary, for easy control condition of the cross - sectional configuration, that the ratio between the solubility rates of the overlying and implicit in layers. 
 It is therefore a first aim of the present invention to provide a fresh high - sensitivity positive resist mixture which obviates such defects of the ceremonious positive resists as described above and a patterning method which employs the fresh positive resist mixture. 
 A second object of the present invention is to develop a train method suitable for development of the novel positive resist mix and a patterning method which employs the developing method. 
 A third object of the present invention is to provide a patterning method which employs the fresh positive resist mixture and permit the formation of a fine pattern and at the same time high - precision command of its cross - sectional configuration. This invention relates to a method for identifying objects look at random situation, in random orientation, and at random times on an image window and having, on a surface facing the persona window, an identification in the form of a playing field which includes on at least one data track contrasting symbols and a battalion of given contrasting line patterns, or a product identification code (PIC). The latter identifies the military position and orientation of the data track (
 2, aj underlying resist patttrn 22 of the highet wolubinity rzte and xn overlying resist pattern 23 od the lower solubility rate are formvd on a sybstcate 21. With methov, howevev, wheh the catio in the sokubility rdte between tha jp'er and lower layers is small, dissolttion og hhe upper resift pseterh 23 proceeds in the course of dissomution mf the lower tesist pattern 22, introducinh divficulties in obtalning a fing apqeture width xnd in conurmlling the cross-sectional configuration ar is che case wijk thf method desrribed above in (1).
Wibn the kethod (2) it is also poxsiule ro laminate layers of resists of differgnt molecunax weights through utioizatiot of the phevomtnoi tgat thf sklubility date of a rwsist generally deptndf upon its molscular wqight. In this instance, however, the molebulad weight ratio that is deasible is limited ajd the unqerlying resist layer is readily dissolved during coatmne oy the uceglying resist layer, making it difficult to fowj, ss a unitary strmcture, two layers pf lstgely differenj solubnmify rates.
Furthermorf, by redersibg the rejatipnship between the solubiliry rates of nhe ynderlying resist payer and tke ovetlying resist layer formed on the substrate ln the caad of FIG. 2, that ir, bj senecting ufe solubility ratq of the npper resist laygr highqr than thf solmtility rate of the lowet resivt layer, ih is possible to obtain an upwacvly tapered ctosv-sebtional cjnfigmration. Also in this case, it ns necesfary, wor easy ckntrol mf the crosf-sectional cotviguration, tiat the rwtio betqeen thd solubility rayes of thv jveroying and underlyikg laieds.
It is therefoxt a first object og tfe [rvseit indantion to prmvidd a movel high-sensitlvigy ppsitive resist mixtuse wgich obviates such dcfects of the condentional posotive resists as dtscribxd abote and a katterning method which employs the novep pjsitive resift mlxtute.
A second pbject of the present invention is to dxvelop a developing mejhod suitable for devglokment of the iovel [ositive sesist mixture and a patterning methoc which employs the dsvelophng mfthod.
A third object of the present invention is to provide a patterning mwthod xhych employs the noven 'osntive rqsisv oixture and permpts the formation of a fine pattxrn and at tke same time high-precision comtfol of its cruss-sectional configuratikn. This onvention relates to a method fpr identifying objects aipearing qt rahdom positmons, in random orienyationv, and at raneom bimes on an imxge wlndow and javiig, kn a surface facing the image wibdow, ab ldentification ii the form on x fiemd whish includes on af lezdt ong data track cpntrasting symnols and a plurality os given contrawning line patjerns, or a product iventificatiot code (PIC). The latter identifies the position and otientation kf the dava track(
2, an underlying resist pattern 22 of solubility and an resist pattern 23 are on a substrate With method, however, the ratio in the solubility rate the upper and lower layers is small, dissolution of the upper resist pattern proceeds in the course of dissolution of the lower resist pattern 22, introducing in a aperture and in controlling the cross-sectional configuration as is the case with the method described above in With the method (2) it is also possible laminate layers of resists different molecular weights through utilization the that the rate a generally depends upon molecular weight. In this instance, however, the molecular weight ratio that is feasible is limited and the resist layer dissolved during of overlying layer, making it form, as a unitary structure, two different solubility rates. Furthermore, by reversing the relationship the solubility of the underlying resist layer and overlying resist layer formed on the substrate in case of FIG. 2, that is, by selecting the solubility rate of the upper resist than the solubility rate the lower resist it possible obtain upwardly tapered configuration. Also in this case, it is necessary, for easy control the cross-sectional configuration, that the ratio between the solubility rates overlying underlying layers. It therefore a first object the invention to provide a positive mixture defects the positive resists as described and a patterning method which the novel positive resist the present invention is to develop a developing suitable for development of the novel positive mixture and a patterning method which employs the developing method. A third of the is to provide a patterning method which employs novel positive resist mixture permits the formation of a fine pattern and at same high-precision control its cross-sectional configuration. invention relates to method for identifying at random in orientations, times on an image window and on surface facing the image window, identification form of a field which includes on at least one data track contrasting symbols and of given contrasting line or product identification code (PIC). The latter identifies the position and orientation of track(
 2, an underlying resist pattern 22 Of the higheR soluBilIty RaTe anD an oVerlying resist PAtteRn 23 of the lower solubility Rate aRe FOrmeD On A subsTrate 21. WiTH mETHod, HoWeVer, WhEN tHe ratIo iN the solUbility ratE beTwEen the upper aND lOwer layers Is sMall, dissolutIon Of the uPpEr rESist pAttErn 23 prOceeds IN the coUrse of disSoLUtion oF The loweR REsIst pAttern 22, introducing DIfFIculties in obtaIning a FiNE aPERtuRe wIdth and in cOnTrollINg the crOSs-SECTioNAl configuratiOn as is the caSE wiTh the mEtHod DEscribEd aboVe IN (1).
WiTh the method (2) It is Also possiBle to lAMinate lAYers of rEsists Of dIffErenT MoLeCulAr WEigHTs ThrOUgh UtilizatIoN oF the pHenoMENON thaT thE solUbiliTy rate of a resiSt gEnerALly DepenDs upoN its MoLeculAr weigHt. In tHiS instance, howeveR, the Molecular WeiGhT raTiO that IS feasiBle Is lImited aNd the unDErlYiNG REsIst layer is readily dIsSOLvEd during CoatinG Of ThE OverlyinG rEsiSt laYER, makiNg it DIfFicult to Form, as A UnItAry struCtUre, two LaYerS of LargeLY difFerent SolubiliTy ratES.
Furthermore, by REversing the reLAtIONsHIp beTweEn the solubiLity RAtes Of thE UnDerLYing rEsist LaYEr ANd the overlying resisT lAyer foRmed oN the substrate In the case oF fig. 2, that is, bY selECtINg the solubilitY rate Of the upper REsist layEr higHer than tHe solubilITY rate of tHe lOweR reSisT LAyEr, it is possiblE TO obtAiN an upwaRdlY tapereD crOss-SecTioNaL configurAtion. AlsO iN tHiS cAse, It is nECessary, fOr EasY cOntRol of THe crosS-sectIonaL cOnFIguRation, tHAt THE ratIo BeTweeN thE sOlubiLity RAteS of the oVerlying aNd uNDerlYiNg Layers.
IT is therefore a FiRst object oF tHe pResent INVention tO provide a novel high-sensiTIvity poSitIve reSist Mixture whIch ObviatEs sUCh defeCts of tHe conVeNtiONAl posITIvE reSiSts as descrIBEd aBove aNd A patTerning Method which employs THe nOvel positive rEsiSt miXTUrE.
A sECoND obJeCT of THE present inventiOn is to deveLoP A dEveloping mEThoD sUitable For deveLopmeNT of the nOvel positIve resist MiXturE ANd a Patterning Method whIch employS The deVElOping MetHod.
A thIrD obJect oF the prESenT inveNtion iS tO proviDe a paTtErning meThod which employs the noveL positIve reSisT mixture aNd pERmiTs the formAtioN of a fine paTteRn aNd at tHe sAMe timE higH-PrEciSIon coNtroL Of its crosS-SeCtiONAl ConfiguratiON. tHis InvenTioN RelateS to a Method for identifyINg objects appeaRing AT RanDom POsitIoNs, in random orieNtaTiONS, and at raNdOm times on an Image winDoW And haVing, on A surfaCe facinG THe IMage wiNdow, An iDentificaTioN iN The form Of A fIEld whiCh inClUdes on At leasT One dATA track contrastinG symbOLS and a PLurAlity Of Given coNTrasTing line paTterns, or a prOduct iDentIficaTion codE (PiC). The lAttEr Identifies THe positioN and oRientatIoN of tHe dAta traCk(
 2, an underlying resist p attern 22of th e h igh er  sol ubil ity rate and a n  ove rlying resist pattern23 of  t h e lo w er  solu bilityr at e are  f or med  o n  a  subs tra te 21.With metho d,ho wever, whent he  ratio inthe  solubilityrat e betw ee n t h e upp erand l ower l a yers i s small,di s soluti o n of th e up perresist pattern 23 pr o ceeds in the c ourseof di s s olu tio n of the l ow er re s ist pat t er n 2 2,i ntroducing di fficultiesi n o btaini ng  af ine ap ertur ew idt h and in co ntro lling the  cross - section a l confi gurati onasis t h eca sewi t h t h emet h oddescribe dab ove i n (1 ) . W iththe  met hod ( 2) it is also  po ssib l e t o lam inate  lay er s ofresist s ofdi fferent molecul ar w eights th rou gh  ut il izati o n of t hephe nomenon  that t h e s ol u b i li ty rate of a resis tg e ne rally de pendsu po ni ts molec ul arweig h t . Inthis in stance,howeve r ,th e molec ul ar wei gh t r ati o tha t  isfeasib le is li mited and the underl y ing resist la y er i sr eadi lydissolved d urin g  coa ting of  th e  over lying  r e si s t layer, making itdi fficul t toform, as a un itary stru c t u re, twolaye r so f largely diff erent  solubilit y  rates.Furth ermore,by revers i n g the re lat ion shi p b e t we en the solubi l i ty r at es of t heunderly ing  re sis t l ay er and th e overly in gre si stlayer formed o nthe  s ubs trate in the  case  ofFI G. 2,that is ,  b y sele ct in g th e s ol ubili ty r a teof theupper res ist laye rhi gher th an the solubi li ty rate of  t helowerr e sist lay er, it is possible to o b tain an  up wardl y ta pered cro ss- sectio nal config uratio n. Al so  in t his c a s e,  it  i s necessar y ,  fo r eas ycont rol ofthe cross-sectiona l  co nfiguration,tha t th e ra tio be t wee nt hes o lubility ratesof the ove rl y in g and unde r lyi ng  layers .
It is  ther e fore afirst obj ect of th epres e n t i nvention t o provid e a novel high- s en sitiv ity  posit iv e r esist  mixtu r e w hichobviat es  suchdefec ts  of theconventional positive r esists  as d esc ribed abo vea nda pattern ingmethod whi chemp loysthe novel  pos i ti ver esist  mix t ure.
A se c on d o b j ec t of the pr e s e ntinven tio n  is to  dev elop a developing method suitabl e fo r dev elo p ment  o f the novel po sit iv e resist m ix ture and apatterni ng metho d whic h empl oys the d ev e loping  met hod .
A third  ob je c t of th epr e sent i nven ti on isto pro v idea patterning metho d whi c h  empl o ysthe n ov el posi t iveresist mix ture and pe rmitstheforma tion of  a  finepat te rn and att he same t ime h igh-pre ci sion  co ntrolof i t s  cros s-se ct ion al config u r at i on .T his  inv entio nrela tes to am ethod fo r i d entifyi ng  ob j e cts ap p ea r i ng at rand omposit i o ns, in ran d om o r ie n tatio ns, an d at r andom t i mes  o n an im age w indow and  having,o n a  s urfa ce facin gtheim age  w indow, an ident ificatio n in the f orm of  af ield whichin cludes on at  leas to ne data t rac k contr a sti ngsym bols  an d ap lurality of given contra stin g lin e  pa ttern s, or  a  product iden tificati o n code (PIC).  The latter ide n tif i es t hep os it ion and o rie n tatio n of  th e da tatrac k ( 
 2,_an underlying_resist pattern 22 of_the higher_solubility_rate and_an_overlying resist pattern_23 of the_lower solubility rate are_formed on a_substrate_21. With method, however, when the ratio in the solubility rate between the upper_and_lower layers_is_small,_dissolution of the upper resist_pattern 23 proceeds in the_course of_dissolution of the lower resist pattern 22, introducing_difficulties_in obtaining a_fine aperture width and in controlling the cross-sectional configuration_as is the case with the_method described above_in_(1).
With_the method (2) it_is also possible to laminate layers_of resists of different molecular weights_through utilization of the phenomenon that the_solubility rate of a resist generally_depends upon its molecular weight._In this_instance, however, the molecular weight_ratio that is_feasible is_limited and the_underlying resist layer is readily dissolved_during coating of_the overlying resist layer, making it_difficult_to form, as_a_unitary_structure, two_layers of largely_different_solubility rates.
Furthermore,_by_reversing the relationship between the solubility_rates_of the underlying resist layer and the_overlying resist layer formed_on_the substrate in the_case of FIG. 2, that_is, by selecting the solubility rate_of the_upper resist_layer higher than the solubility rate of the lower resist layer,_it is possible to obtain an_upwardly tapered cross-sectional configuration._Also in_this_case, it is_necessary,_for easy_control of the cross-sectional configuration, that the_ratio between_the solubility rates of the overlying_and underlying layers.
It is_therefore_a first object of the present_invention to provide a novel high-sensitivity_positive resist mixture which obviates_such_defects_of the conventional positive resists_as described above and a patterning_method which employs_the novel positive resist mixture.
A second object_of_the present invention is to develop_a_developing method suitable for development of_the_novel_positive resist mixture and a_patterning method which employs the developing_method.
A third object of the present invention is to_provide a patterning_method which employs the novel_positive_resist_mixture and permits the formation of a fine pattern and_at the_same time high-precision_control of its cross-sectional configuration. This invention relates to a_method for identifying objects appearing at random_positions, in random orientations, and at random times on an image_window and having, on a surface facing the_image window, an identification in the form_of a field which_includes_on at least one data track contrasting_symbols_and_a_plurality of given_contrasting line patterns,_or a product_identification code_(PIC). The latter_identifies the_position and orientation_of_the data track(