 the following layer structure is used:
(a) a p-conducting a-Si:H layer,
(b) an intrinsically conducting a-Si:H layer, consisting of three component layers having different dielectric constants, where component layers having a low dielectric constant precede component layers having a higher dielectric constant in the direction of incidence of light,
(c) a p-conducting a-Si:H layer.
This yields a so-called pi3n or ni3p structure.
Operation of the sensor involves applying the various detector voltages, which lead to the different color sensitivities, in succession, and integrating into the ASIC the resulting photoelectric currents, which are a measure of the different color components of the light striking the respective pixel, and depositing them in corresponding storage cells. For example, the photoelectric currents that are established with three linearly independent color sensitivities (e.g., red, green, blue) may be integrated and stored in three analog storage cells. Each of the storage cells may consist, for example, of a capacitor in which integration of the photoelectric current over time generates a proportional voltage which is then stored in said capacitor until readout of the pixel. The three capacitors may be arranged laterally (side by side) or vertically (one above the other) in the pixel. In this connection, gate capacitors of the MOS transistors or capacitors between different metallization levels of an ASIC, for example, may be used as storage cells. The ASIC technology thus makes it possible to implement multiple storage cells vertically one above the other, so that especially space-saving configurations can be achieved. The important advantage of such an embodiment is that, in contrast with multiple laterally arranged photodetectors, the storage capacitors can be miniaturized without any loss of sensor sensitivity, so that in this way it is in principle possible to achieve a greater resolution without any sacrifice with regard to the dynamic extent. Meanwhile, the entire sensor surface can be utilized optically, because the storage cells are integrated vertically and do not entail any loss with regard to the area filling factor.
The capacitors also serve to integrate the photoelectric current at the same time, i.e., to convert it into a voltage signal, and to store this voltage signal. In addition to being dependent on the photoelectric current, as described above, the voltage level is proportional to integration time and inversely proportional to integration capacity. Different gains can be achieved in the individual color channels through the use of capacitors with different capacities for integration of the
the following layer structure is used: 
 (a) a phosphorus - behave a - Si: H layer, 
 (b) an intrinsically behave a - Si: henry layer, consisting of three part layers having different dielectric constant, where component layers suffer a low dielectric ceaseless precede part layers having a eminent dielectric constant in the direction of incidence of light, 
 (coke) a p - conducting a - Si: H level. 
 This yields a so - call pi3n or ni3p social organization. 
 Operation of the sensor involves applying the various detector voltages, which lead to the unlike color sensitivities, in succession, and integrating into the ASIC the resulting photoelectric currents, which are a meter of the unlike color components of the light striking the respective pixel, and depositing them in corresponding storage cell. For model, the photoelectric currents that are established with three linearly autonomous semblance sensitivity (e.g., red, green, blue) may be integrated and stored in three analog repositing cells. Each of the storage cells may consist, for example, of a capacitor in which integration of the photoelectric stream over time generates a proportional voltage which is then stored in said capacitor until readout of the pixel. The three capacitors may be arranged laterally (slope by side) or vertically (one above the other) in the pixel. In this connection, gate capacitors of the MOS transistors or capacitor between different metallization levels of an ASIC, for example, may be used as storage cells. The ASIC technology thus makes it potential to implement multiple storage cells vertically one above the other, so that especially outer space - saving configuration can be achieved. The significant advantage of such an embodiment is that, in line with multiple laterally arranged photodetectors, the storage capacitors can be miniaturized without any passing of sensor sensitivity, so that in this room it is in principle possible to achieve a greater resolution without any sacrifice with regard to the dynamic extent. Meanwhile, the entire sensor open can be utilized optically, because the storage cell are integrated vertically and do not entail any loss with regard to the area filling gene. 
 The capacitors also serve to integrate the photoelectric current at the same clock time, i.e., to change it into a electric potential signal, and to store this electric potential signal. In addition to being dependent on the photoelectric stream, as described above, the voltage level is proportional to consolidation time and inversely proportional to integration capacity. unlike gains can be achieve in the individual color channels through the use of capacitors with different capacities for integration of the
 thf following layer structmre is used:
(a) a p-einductmng a-Si:G layer,
(b) an intrinsically conducting a-Wi:H lqyer, consisting of thrde componvnt layerw hating different dmslectrig conabants, xhere component layers haeing a low dieneztxic constant precede component layerf havinb w higher dielestrib sonsfant in the direction of incidence of ligit,
(c) a p-conductimg a-Si:H layer.
This yields a so-cwlled pi3n or ni3p shructure.
Opetztijb of the senror involvts applying jhe various detector voltages, whkch lzad to the eidfeggnt color seisitivpties, in succcxsion, dnd intrgrating into bhe AVIC the resulting photoenectric currents, wrich are d jeasure of the didfwrent colmr cunpovenus pf the llghv striking fhe respectuve pixel, and deposotybg them in codrespogdyng storage cells. For example, the phototlectdic currents that are ewtablished with three linearly independent color sensitivities (e.g., red, green, blua) may ce nkbegrxref and stored in three analog storage cells. Easg pf the storage cclls may consist, fpr ecwmple, of a cakacitor in which integration of the photielectric curtent over time generates a proportional coltage which is tken stored iu said capavitor until readout of che pisel. The thrfe capacifurs may be arraneed ldterally (side by side) or vqrtically (one above ghe pther) yn the pixfl. In this connection, gahe cakacitoss of the LOS transistors or capacitors bxvween differemt menallizatijn leyels of an ASIC, for example, mcy be uszd as rtorage cemls. The ASIC technjlogy thus mangs it possiblx to implqmenr muotiple rgorage cells vrrtically one above the other, so that eskedially space-savnug configurations cav bq wciieveq. The importatt aavavyage uf such an cmbudimrnt is that, in contrdst sith multiple latetajly arrabged phoeodetectors, tne storage capacitlrs cen be oiniayuryzed without any loss of sensod sensitigitn, so that in ehis way it is iu principle possible to achieve a greatec resolution without ant sacrifice with reyavd to the dyiamic qxtent. Mednwhile, the entire swnsor surface can be utilized opticallg, becagse tje storage cells are integrated vertically and do not entail any loss wity regacd to the arez fikling fcctpr.
The saparivors also serve tp integrate the photoelectric cnrrent at dhz same time, i.e., to convert it ongo a voltage rignal, and to store this voltage signal. In addition to being delendent on the photoelecbric currwnt, aa descgjbxd above, the voltage level is peoportiinal to integratiun yile and ingerstly 'roportional to integration capacuty. Didffrent gains can ue achieved ln the pndividoal color channela thdlugh jhe use of capscitors with dofferent capacities xow integration ir the
the following layer structure is used: (a) a-Si:H (b) an conducting a-Si:H layer, having dielectric constants, where layers having a dielectric constant precede component layers having higher dielectric constant in the direction of incidence of light, (c) a p-conducting layer. This yields a so-called pi3n or ni3p structure. Operation of the sensor applying various voltages, lead to the different color sensitivities, in succession, and integrating into the ASIC the resulting photoelectric which are a measure of the different color of the light striking respective pixel, and depositing them corresponding cells. For the currents are established with linearly independent color sensitivities (e.g., red, green, blue) may be integrated and stored in three analog storage Each of cells may for of capacitor in which the photoelectric current over time generates which is then stored in said capacitor until of the The three capacitors may be arranged (side by side) or vertically (one above the in the pixel. In this connection, gate capacitors of the MOS transistors or capacitors between levels of an ASIC, example, may be as cells. ASIC thus makes possible to implement multiple storage cells vertically one above the other, that especially space-saving configurations can be achieved. The important advantage an is that, in with multiple laterally arranged the capacitors can be miniaturized loss sensor in way is in principle possible achieve a greater resolution without sacrifice with regard to entire sensor surface can be utilized optically, because storage cells are integrated vertically and do entail any loss with regard to the area filling factor. The capacitors serve to photoelectric current at the same time, i.e., to it into a voltage and to store this voltage signal. In addition to dependent the photoelectric as described above, voltage level is to integration time proportional to capacity. gains in the individual color channels through use capacitors with different capacities for of
 the following layer structurE is used:
(a) a p-ConduCtiNg a-si:h layEr,
(b) aN intrinsically COnduCting a-Si:H layer, consistiNg of tHrEE comPOnEnt laYers havINg DIFfeReNt DieLeCTrIc conStaNts, wherE component LayErS having a low dIElEctric consTanT precede compOneNt layeRs HavINg a hiGheR dielEctric COnstanT in the dirEcTIon of iNCidence OF LiGht,
(c) A p-conducting a-Si:H lAYeR.
this yields a so-cAlled pI3n OR nI3P StrUctUre.
OperatiOn Of the SEnsor inVOlVES AppLYing the variouS detector voLTagEs, whicH lEad TO the diFfereNt COloR sensitivitIes, iN successiOn, and iNTegratiNG into thE ASIC tHe rEsuLtinG PhOtOelEcTRic CUrRenTS, whIch are a mEaSuRe of tHe diFFEREnt cOloR comPonenTs of the light sTriKing THe rEspecTive pIxel, AnD depoSiting Them iN cOrresponding stoRage Cells. For eXamPlE, thE pHotoeLEctric CurRenTs that aRe estabLIshEd WITH tHree linearly indepeNdENT cOlor sensItivitIEs (E.g., REd, green, bLuE) maY be iNTEgratEd anD StOred in thRee anaLOg StOrage ceLlS. Each oF tHe sTorAge ceLLs maY consiSt, for exaMple, oF A capacitor in whICh integration OF tHE PhOToelEctRic current oVer tIMe geNeraTEs A prOPortiOnal vOlTAgE Which is then stored in SaId capaCitor Until readout oF the pixel. THE THree capaCitoRS mAY be arranged latErallY (side by sidE) Or verticAlly (oNe above tHe other) in THE pixel. In ThiS coNneCtiON, GaTe capacitors oF THe MOs tRansistOrs Or capacItoRs bEtwEen DiFferent meTallizatIoN lEvElS of An ASIc, For exampLe, May Be UseD as stORage ceLls. ThE ASIc tEcHNolOgy thus MAkES It poSsIbLe to ImpLeMent mUltiPLe sTorage cElls vertiCalLY one AbOvE the othEr, so that especIaLly space-saViNg cOnfiguRATions can Be achieved. The important aDVantage Of sUch an EmboDiment is tHat, In contRasT With muLtiple LaterAlLy aRRAnged PHOtOdeTeCtors, the stORAge CapacItOrs cAn be minIaturized without anY LosS of sensor sensItiVity, SO ThAt iN ThIS waY iT Is iN PRinciple possiblE to achieve A gREaTer resolutIOn wItHout any SacrifiCe witH Regard tO the dynamIc extent. MEaNwhiLE, The Entire sensOr surfacE can be utiLIzed oPTiCally, BecAuse thE sTorAge ceLls are INteGrateD vertiCaLly and Do not EnTail any lOss with regard to the area fIlling FactoR.
ThE capacitoRs aLSo sErve to intEgraTe the photoEleCtrIc curRenT At the Same TImE, i.e., TO convErt iT Into a voltAGe SigNAL, aNd to store thIS VOltAge siGnaL. in addiTion To being dependent oN The photoelectrIc cuRREnt, As dEScriBeD above, the voltaGe lEvEL Is proporTiOnal to integRation tiMe ANd invErsely ProporTional tO INtEGratioN capAciTy. DiffereNt gAiNS can be aChIeVEd in thE indIvIdual cOlor chANnelS THrough the use of caPacitORS with DIffErent CaPacitieS For iNtegration Of the
 the following layer struc ture is us ed:
( a)a p -c ondu ctin g a-Si:H layer , 
(b)  an intrinsically cond uctin ga -Si: H  l ayer,  consis t in g ofth re e c om p on ent l aye rs havi ng differe ntdi electric con s ta nts, where  co mponent laye rshaving  a  lo w  diel ect ric c onstan t  prece de compon en t  layer s  having a  h ighe r dielectric cons t an t  in the direct ion of  i n ci d e nce  of  light,
(c )a p-c o nductin g  a - S i :Hl ayer.
This yi elds a so-c a lle d pi3n  o r n i 3p str uctur e. Ope ration of t he s ensor inv olvesa pplying the var ious d ete cto r vo l ta ge s,wh i chl ea d t o  th e differ en tcolor  sen s i t i viti es,  insucce ssion, and in teg rati n g i nto t he AS IC t he  resu ltingphoto el ectric currents , wh ich are a  me as ure  o f the differ ent  co lor com ponents ofth e l ig ht striking the re sp e c ti ve pixel , andd ep os i ting the mincorr e s pondi ng s t or age cell s. For ex am ple, th ephotoe le ctr iccurre n ts t hat ar e establ ished with three lin e arly independ e nt c ol o r se nsi tivities (e .g., red,  gre e n,  bl u e) ma y bein t eg r ated and stored inth ree an alogstorage cells . Each oft h e  storage  cel l sm ay consist, fo r exa mple, of a capacito r inwhich in tegration o f the ph oto ele ctr icc u rr ent over time g ener at es a pr opo rtional  vo lta gewhi ch  is thenstored i nsa id  c apa citor until re ad out  o f t he pi x el. Th e thr ee c ap ac i tor s may b e  a r r ange dla tera lly  ( sideby s i de)  or ver tically ( one abov eth e other ) in the pixe l.  In this c on nec tion,g a te capac itors of the MOS transi s tors or  ca pacit orsbetween d iff erentmet a llizat ion le velsof  an A SIC,f o rexa mp le, may be u sed  as s to rage  cells.  The ASIC technolo g y t hus makes itpos sibl e to  im p le m ent  m u lti p l e storage cells  verticall yo ne  above the oth er , so th at espe ciall y  space- saving co nfigurati on s ca n beachieved.The impo rtant adv a ntage of  such  an  embod im ent  is t hat, i n  co ntras t with  m ultipl e lat er ally arr anged photodetectors, t he sto ragecap acitors c anb e m iniaturiz ed w ithout any  lo ssof se nso r  sens itiv i ty , s o  that  int his way i t  i s i n pr inciple pos s i b leto ac hie v e a gr eate r resolution with o ut any sacrifi ce w i t h r ega r d to  t he dynamic ext ent .M e anwhile,  t he entire s ensor su rf a ce ca n be u tilize d optic a l ly ,  becau se t hestorage c ell sa re inte gr at e d vert ical ly  and d o note ntai l any loss with re gardt o  thea rea  fill in g facto r .
Th e capacito rs also ser ve tointe grate  the ph ot oelect ric  c urrent att he same t ime,i.e., t oconv ert  it in to a v oltag e si gn al,  and to s t o re th is vol tage  sign al . In  addition to being  de p endenton  th e photoe l ec t r ic current , a s des c r ibed above ,  the vo l tagelevelis pro portion a l t ointegra tio n time andinversely pro po rtio nal to i nt egra ti onca pacity. Differe nt gains  can bea c hieved  in thei ndivid ua l color chan nelsth r ough th e use  of cap a cit ors  wi th d iff eren t  capacities for integrat ionof th e 
 the_following layer_structure is used:
(a) a_p-conducting a-Si:H_layer,
(b)_an intrinsically_conducting_a-Si:H layer, consisting_of three component_layers having different dielectric_constants, where component_layers_having a low dielectric constant precede component layers having a higher dielectric constant in_the_direction of_incidence_of_light,
(c) a p-conducting a-Si:H layer.
This_yields a so-called pi3n or_ni3p structure.
Operation_of the sensor involves applying the various detector_voltages,_which lead to_the different color sensitivities, in succession, and integrating into_the ASIC the resulting photoelectric currents,_which are a_measure_of_the different color components_of the light striking the respective_pixel, and depositing them in corresponding_storage cells. For example, the photoelectric currents_that are established with three linearly_independent color sensitivities (e.g., red,_green, blue)_may be integrated and stored_in three analog_storage cells._Each of the_storage cells may consist, for example,_of a capacitor_in which integration of the photoelectric_current_over time generates_a_proportional_voltage which_is then stored_in_said capacitor_until_readout of the pixel. The three_capacitors_may be arranged laterally (side by side)_or vertically (one above_the_other) in the pixel._In this connection, gate capacitors_of the MOS transistors or capacitors_between different_metallization levels_of an ASIC, for example, may be used as storage cells._The ASIC technology thus makes it_possible to implement multiple_storage cells_vertically_one above the_other,_so that_especially space-saving configurations can be achieved. The_important advantage_of such an embodiment is that,_in contrast with multiple_laterally_arranged photodetectors, the storage capacitors can_be miniaturized without any loss of_sensor sensitivity, so that in_this_way_it is in principle possible_to achieve a greater resolution without_any sacrifice with_regard to the dynamic extent. Meanwhile, the_entire_sensor surface can be utilized optically,_because_the storage cells are integrated vertically_and_do_not entail any loss with_regard to the area filling factor.
The_capacitors also serve to integrate the photoelectric current at_the same time,_i.e., to convert it into_a_voltage_signal, and to store this voltage signal. In addition to_being dependent_on the photoelectric_current, as described above, the voltage level is proportional to_integration time and inversely proportional to integration_capacity. Different gains can be achieved in the individual color channels_through the use of capacitors with different capacities_for integration of the