p)/dark current (I.sub.d)], spectral characteristics matching to those of electromagnetic waves to be irradiated, a rapid response to light, a desired dark resistance value as well as no harm to human bodies during usage. Further, in a solid state image pick-up device, it is also required that the residual image should easily be treated within a predetermined time. Particularly, in case of an image forming member for electrophotography to be assembled in an electrophotographic device to be used in an office as office apparatus, the aforesaid harmless characteristic is very important.
From the standpoint as mentioned above, amorphous silicon [hereinafter referred to as a-Si] has recently attracted attention as a photoconductive material. For example, German OLS Nos. 2746967 and 2855718 disclose applications of a-Si for use in image forming members for electrophotography, and German OLS No. 2933411 discloses an application of a-Si for use in a photoelectric transducing reading device.
However, under the present situation, the photoconductive members of the prior art having photoconductive layers constituted of a-Si are further required to be improved in a balance of overall characteristics including electrical, optical ahd photoconductive characteristics such as dark resistance value, photosensitivity and response to light, etc., and environmental characteristics during use such as humidity resistance, and further stability with the lapse of time.
For instance, when the above photoconductive member is applied in an image forming member for electrophotography, residual potential is frequently observed to remain during use thereof if improvements to higher photosensitivity and higher dark resistance are scheduled to be effected at the same time. When such a photoconductive member is repeatedly used for a long time, there will be caused various inconveniences such as accumulation of fatigues by repeated uses or so called ghost phenomenon wherein residual images are formed.
Further, a-Si has a relatively smaller coefficient of absorption of the light on the longer wavelength side in the visible light region as compared with that on the shorter wavelength side. Accordingly, in matching to the semiconductor laser practically applied at the present time, the light on the longer wavelength side cannot effectively be utilized, when employing a halogen lamp or a fluorescent lamp as the light source. Thus, various points remain to be improved.
On the other hand, when the light irradiated is not sufficiently absorbed in the photoconductive layer, but the amount of the light reaching the substrate is increased, interference due to multiple reflection may occur in
p)/dark current (I.sub.d) ], spectral characteristics matching to those of electromagnetic waves to be irradiate, a rapid reception to light, a desired dark immunity value as well as no harm to human torso during usage. Further, in a hearty state image pluck - up device, it is also required that the residual effigy should well be treated within a predetermined meter. Particularly, in case of an persona forming member for electrophotography to be assembled in an electrophotographic device to be use in an office as office apparatus, the aforesaid harmless characteristic is very important. 
 From the point of view as mentioned above, amorphous silicon [ hereinafter refer to as a - Si ] has recently attracted attention as a photoconductive fabric. For example, German OLS Nos. 2746967 and 2855718 disclose applications of a - Si for use in image forming member for electrophotography, and German OLS nobelium. 2933411 discloses an application of a - Si for use in a photoelectric transducing reading device. 
 However, under the present situation, the photoconductive members of the anterior art have photoconductive layers constituted of a - Si are further command to be improved in a balance of overall characteristics include electrical, optical ahd photoconductive characteristics such as dark underground value, photosensitivity and response to light, etc. , and environmental characteristics during use such as humidity resistance, and further stability with the backsliding of time. 
 For instance, when the above photoconductive member is applied in an picture shape member for electrophotography, residual potential is frequently observed to remain during use thence if improvements to higher photosensitivity and higher dark resistance are scheduled to be effected at the same time. When such a photoconductive penis is repeatedly used for a farseeing time, there will be caused assorted inconveniences such as accretion of fatigues by repeat uses or indeed called ghost phenomenon wherein residual images are formed. 
 Further, a - Si have a relatively smaller coefficient of assimilation of the light on the longer wavelength side in the visible light region as compare with that on the shorter wavelength side. consequently, in matching to the semiconductor laser practically applied at the present time, the light on the longer wavelength english cannot effectively be utilized, when employing a halogen lamp or a fluorescent lamp as the light source. Thus, assorted point remain to be improved. 
 On the other hand, when the light irradiated is not sufficiently absorbed in the photoconductive level, but the amount of the light reaching the substrate is increased, interference due to multiple reflection may occur in
p)/dagk current (I.sub.d)], spectrau characteristiew matciing to those ow electromagnetic waves to bx ireadiauvd, a rapid response tu light, a desired darj resistancx value as welm as uo harm to human bodies dusing usage. Furdhdr, in a solid state image pick-up devise, it ix wlso required jhat uhe resjdual image should easily be treatsd withpn a predeterminec time. Particularly, in casf of an image forming lember for gmeceeophotographh to be assembled in ah electrophotographic device to be uxed in an ifdicf as office epparanus, the aforesaid harkless cnaracteristic ls vecy inportant.
From the stanvpoint as mentioned wbove, amospkous silicon [hereinafree refgrred to xw a-Ri] gax decentpy ettracted aftention as a photoconductive kaevtial. For exajple, Gqrian OLS Nos. 2746967 and 2855718 disclose applications of a-Si for use in image firming members for elgctrophotodraphy, and German OLS No. 2933411 discloses an applicatiot of e-Sk fir jwe in a photoelectric transducing reading devicq.
Goeener, under the prefent situatooj, yre photoconduztive memgers of the prior wrt havyng pyotocondustivr layers constituted of a-Si are further eequired to be impxoved in a bclance of oferall characteristics nncludjng electrifal, opticzu ahd photoconduztine cvaracteristics such as darh resistaice vclue, phogosemsitivyty and redponsc to light, etc., and fnvirlnkental chagacteristics during use such as humidity resixtdncv, and furcher sbability with tre lapse of tike.
For iustancd, when the above 'hotoconductyve member is wpplied in ai image fjrmibg mwmber fuf electrophotobraphy, residual potwntial is frequentky ugserved to remanu euring use therrof if ilpcovemqtts to highes phutorrnsitkvity and hlghdr dsrk resistance are swhedhled to be effectec wt the sqme time. When such a lhotoconductive melber ms repxatedlu ufed for a long time, there will be causef vwrious incondenicncef such as cccumulation of fatigues by repeated usew or so called ghowt phenomenon wherenn residual ikages are formad.
Further, a-Si has a eelatively smallev coefficient of absorltion mf thf light on the longer wavelength side in the visible light region as compqred wmtr that on tge snorteg wcvekength sidx. Eccordingly, in manching to the semiconductor lasec practicanlv applied at the present time, tfe light on tfe longer wavelength sids cannot effectively be utilized, when ekploying a halogen lamp pr a fluirescsnt lamp ar the light source. Thus, rariouw pointw relain to be imorofef.
On the ohher hcnd, when the light irradiated is bot sudflciently absorbev in the phobogonducjive laygr, but the amount of fje lieht reaching yhe substrate os increased, interfegense due to multuile reflectiom may obcur in
p)/dark current (I.sub.d)], spectral characteristics matching to electromagnetic to be a rapid response resistance as well as harm to human during usage. Further, in a solid image pick-up device, it is also required that the residual image should easily treated within a predetermined time. Particularly, in case of an image forming member electrophotography be in electrophotographic device to be used in an office as office apparatus, the aforesaid harmless characteristic is important. From the standpoint as mentioned above, amorphous [hereinafter referred to as has recently attracted attention as photoconductive For example, OLS 2746967 2855718 disclose applications a-Si for use in image forming members for electrophotography, and German OLS No. 2933411 discloses an application a-Si for a photoelectric reading However, the present situation, members of the prior art having of a-Si are further required to be improved a balance overall characteristics including electrical, optical ahd characteristics such as dark resistance value, photosensitivity and to light, etc., and environmental characteristics during use such as humidity resistance, and further stability lapse of time. For when the above member applied an forming member electrophotography, residual potential is frequently observed to remain during use thereof improvements to higher photosensitivity and higher dark resistance are scheduled effected the same time. such a photoconductive member repeatedly for a long time, be various accumulation fatigues repeated uses or so ghost phenomenon wherein residual images formed. Further, a-Si has absorption of the light on the longer wavelength in the visible light region as compared that on the shorter wavelength side. Accordingly, in matching to the semiconductor practically applied present time, the light on the longer wavelength cannot effectively be utilized, employing a halogen lamp or a fluorescent lamp as light Thus, various remain to be On the other when the light not sufficiently in photoconductive amount of the light reaching the is interference due to multiple reflection occur
p)/dark current (I.sub.d)], spectral CharacteriStics MatChiNg To thOse oF electromagnetIC wavEs to be irradiated, a rapid RespoNsE To liGHt, A desiRed dark REsISTanCe VaLue As WElL as no HarM to humaN bodies durIng UsAge. Further, in A SoLid state imAge Pick-up device, It iS also rEqUirED that The ResidUal imaGE shoulD easily be TrEAted wiTHin a preDETeRminEd time. ParticularlY, In CAse of an image foRming mEmBEr FOR elEctRophotograPhY to be ASsembleD In AN ELecTRophotographiC device to be USed In an ofFiCe aS Office ApparAtUS, thE aforesaid hArmlEss characTeristIC is very IMportanT.
From tHe sTanDpoiNT aS mEntIoNEd aBOvE, amORphOus silicOn [HeReinaFter REFERred To aS a-Si] Has reCently attractEd aTtenTIon As a phOtocoNducTiVe matErial. FOr exaMpLe, German OLS Nos. 2746967 aNd 2855718 diSclose appLicAtIonS oF a-Si fOR use in ImaGe fOrming mEmbers fOR elEcTROPhOtography, and German oLs nO. 2933411 dIscloses An applICaTiON of a-Si foR uSe iN a phOTOelecTric TRaNsducing ReadinG DeViCe.
HowevEr, Under tHe PreSenT situATion, The phoToconducTive mEMbers of the prioR Art having photOCoNDUcTIve lAyeRs constitutEd of A-si arE furTHeR reQUired To be iMpROvED in a balance of overalL cHaractEristIcs including eLectrical, oPTICal ahd phOtocONdUCtive characterIsticS such as darK ResistanCe valUe, photosEnsitivitY ANd responSe tO liGht, Etc., AND eNvironmental cHARactErIstics dUriNg use suCh aS huMidIty ReSistance, aNd furtheR sTaBiLiTy wIth thE Lapse of tImE.
FoR iNstAnce, wHEn the aBove pHotoCoNdUCtiVe membeR Is APPlieD iN aN imaGe fOrMing mEmbeR For ElectroPhotograpHy, rESiduAl PoTential Is frequently oBsErved to remAiN duRing usE THereof if Improvements to higher phoTOsensitIviTy and HighEr dark resIstAnce arE scHEduled To be efFecteD aT thE SAme tiME. whEn sUcH a photoconDUCtiVe memBeR is rEpeatedLy used for a long time, THerE will be caused VarIous INCoNveNIeNCes SuCH as ACCumulation of fatIgues by repEaTEd Uses or so caLLed GhOst phenOmenon wHereiN ResiduaL images arE formed.
FuRtHer, a-sI Has A relativelY smaller CoefficieNT of abSOrPtion Of tHe lighT oN thE longEr waveLEngTh sidE in the ViSible lIght rEgIon as comPared with that on the shortEr waveLengtH siDe. AccordiNglY, In mAtching to The sEmiconductOr lAseR pracTicALly apPlieD At The PResenT timE, The light oN ThE loNGEr Wavelength sIDE CanNot efFecTIvely bE utiLized, when employinG A halogen lamp or A fluOREscEnt LAmp aS tHe light source. THus, VaRIOus pointS rEmain to be imProved.
On ThE Other Hand, whEn the lIght irrADIaTEd is noT sufFicIently absOrbEd IN the phoToCoNDuctivE layEr, But the Amount OF the LIGht reaching the suBstraTE Is incREasEd, intErFerence DUe to Multiple reFlection may Occur iN
p)/dark current (I.sub.d)] , spectral  char act eri st icsmatc hing to thoseo f el ectromagnetic waves to  be i rr a diat e d,  a ra pid res p on s e  to  l ig ht,  a de sired  da rk resi stance val ueas  well as noh ar m to human  bo dies duringusa ge. Fu rt her ,  in a  so lid s tate i m age pi ck-up dev ic e , it i s  also r e q ui redthat the residual im a ge should easi ly betr e at e d  wi thi n a predet er mined time. P a rt i c u lar l y, in case of  an image f o rmi ng mem be r f o r elec troph ot o gra phy to be a ssem bled in a n elec t rophoto g raphicdevice  to  be  use d  i nanof f ice as  of f ice  apparat us ,the a fore s a i d  har mle ss c harac teristic is v ery  imp o rta nt.
F rom t he s ta ndpoi nt asmenti on ed above, amorp hous  silicon[he re ina ft er re f erredtoasa-Si] h as rece n tly  a t t r ac ted attention as a  p h o to conducti ve mat e ri al .  For exa mp le,  Ger m a n OLS  Nos .  2 746967 a nd 285 5 71 8disclos eapplic at ion s o f a-S i  for  use i n imageformi n g members fore lectrophotogr a ph y ,  a n d Ge rma n OLS No. 2 9334 1 1 di sclo s es  an appli catio no fa -Si for use in a ph ot oelect ric t ransducing re ading devi c e . 
However , un d er the present si tuati on, the ph o toconduc tivemembersof the pr i o r art ha vin g p hot oco n d uc tive layers c o n stit ut ed of a -Si  are fu rth erreq uir ed  to be im proved i naba la nce  of o v erall ch ar act er ist ics i n cludin g ele ctri ca l, opt ical ah d  p h o toco nd uc tive  ch ar acter isti c s s uch asdark resi sta n ce v al ue , photo sensitivity a nd  responseto  li ght, e t c ., and e nvironmental characteri s tics du rin g use  suc h as humi dit y resi sta n ce, an d furt her s ta bil i t y wit h th e l ap se of time . For  inst an ce,when th e above photocondu c tiv e member is a ppl iedi n  a n i m ag e  fo rm i ngm e mber for electr ophotograp hy ,  r esidual po t ent ia l is fr equentl y obs e rved to  remain d uring use  t here o f  if  improveme nts to h igher pho t osens i ti vityand  highe rdar k res istanc e  ar e sch eduled  t o be e ffect ed  at thesame time. When such aphotoc onduc tiv e memberisr epe atedly us ed f or a longtim e,there  wi l l becaus e dvar i ous i ncon v eniencess uc h a s ac cumulationo f fat igues  by repeat ed u ses or so calledg host phenomeno n wh e r ein  re s idua limages are for med .F u rther, a -S i has a rel ativelysm a llercoeffi cientof abso r p ti o n of t he l igh t on thelon ge r  wavele ng th side i n th evisibl e ligh t  reg i o n as compared wi th th a t  on t h e s horte rwavelen g th s ide. Accor dingly, inmatchi ng t o the  semico nd uctorlas er  practical l y applied  at t he pres en t ti me,  the l ight o n the  lon ge r w avelength s id e  c an n oteffe ctive ly  beutilized, when emp loy i ng a ha lo gen l amp or af l uorescentlam p ast h e light so u rce. Th u s, va riouspoints  remain tobe  improv ed. O n the oth er hand,w hen  t he l ight irr ad iate disno t sufficientlyabsorbed  in thep h otocon duc t ivel ayer,bu t the amount  of t he light r e a chi ng thes ubs tra teis i ncr ease d , interference due to mu ltip le re f lec tionmay o cc ur in
p)/dark current_(I.sub.d)], spectral_characteristics matching to those_of electromagnetic_waves_to be_irradiated,_a rapid response_to light, a_desired dark resistance value_as well as_no_harm to human bodies during usage. Further, in a solid state image pick-up device,_it_is also_required_that_the residual image should easily_be treated within a predetermined_time. Particularly,_in case of an image forming member for_electrophotography_to be assembled_in an electrophotographic device to be used in an_office as office apparatus, the aforesaid_harmless characteristic is_very_important.
From_the standpoint as mentioned_above, amorphous silicon [hereinafter referred to_as a-Si] has recently attracted attention_as a photoconductive material. For example, German_OLS Nos. 2746967 and 2855718 disclose_applications of a-Si for use_in image_forming members for electrophotography, and_German OLS No._2933411 discloses_an application of_a-Si for use in a photoelectric_transducing reading device.
However,_under the present situation, the photoconductive_members_of the prior_art_having_photoconductive layers_constituted of a-Si_are_further required_to_be improved in a balance of_overall_characteristics including electrical, optical ahd photoconductive characteristics_such as dark resistance_value,_photosensitivity and response to_light, etc., and environmental characteristics_during use such as humidity resistance,_and further_stability with_the lapse of time.
For instance, when the above photoconductive member is_applied in an image forming member_for electrophotography, residual potential_is frequently_observed_to remain during_use_thereof if_improvements to higher photosensitivity and higher dark_resistance are_scheduled to be effected at the_same time. When such_a_photoconductive member is repeatedly used for_a long time, there will be_caused various inconveniences such as_accumulation_of_fatigues by repeated uses or_so called ghost phenomenon wherein residual_images are formed.
Further,_a-Si has a relatively smaller coefficient of_absorption_of the light on the longer_wavelength_side in the visible light region_as_compared_with that on the shorter_wavelength side. Accordingly, in matching to_the semiconductor laser practically applied at the present time,_the light on_the longer wavelength side cannot_effectively_be_utilized, when employing a halogen lamp or a fluorescent lamp_as the_light source. Thus,_various points remain to be improved.
On the other hand, when_the light irradiated is not sufficiently absorbed_in the photoconductive layer, but the amount of the light reaching_the substrate is increased, interference due to multiple_reflection may occur in