. In particular, Si nanoclusters (nc) embedded in SiO2 have in recent years attracted the interest of the scientific community as a promising new material for the fabrication of a visible Si-based light source. Alternatively, Er-doped crystalline Si has been extensively studied to take advantage of the radiative intra-4f shell Er transition. Room-temperature operating devices with efficiencies of around 0.05% have been achieved. The device efficiency is very low and the process temperature is very high, normally over 1100° C.
However, these pioneering efforts in creating visible luminescence emanating from porous room-temperature silicon (Si), have spurred a tremendous amount of research into using nano-sized Si to develop a Si-based light source. One widely-used method of fabricating nanocluster Si (nc-Si) is to precipitate the nc-Si out of SiOx (where x<2), producing a film using chemical vapor deposition (CVD), radio frequency (RF)-sputtering, or Si implantation. This film is often called silicon-rich silicon oxide (SRSO) or silicon-rich oxide (SRO). Using the CVD or RF-sputtering processes, with a high-temperature annealing, a photoluminescence (PL) peak in the SRSO can typically be obtained in the wavelength range of 590 nanometers (nm) to 750 nm. However, these SRSO materials exhibit low quantum efficiency and have a stability problem, which reduces the PL intensity height over time, and limits their application to EL devices.
Er implantation, creating Er-doped nanocrystal Si, is also used in Si-based light sources. However, state-of-the-art implantation processes have not been able to distribute the dopant uniformly, which lowers the light emitting efficiency and increases costs. At the same time, there has been no interface engineering sufficient to support the use of such a dopant. Using the Si/SiO2 superlattice structure to control crystal size results in a slow, high-temperature deposition process that cannot simultaneously control both the Si particle size and the quality Si nanocrystal/SiO2 interface. The device efficiency is very low, which limits the device applications. In order to improve the device efficiency, a large interface area must be created between nanocrystal Si and SiO2.
A simple and efficient light-emitting device compatible with silicon, and powered by a dc voltage would be desirable in applications where photonic devices (light emitting and light detecting) are necessary.
. In particular, Si nanoclusters (nc) embedded in SiO2 have in recent years attract the sake of the scientific community as a promising new fabric for the fabrication of a visible Si - based light reference. Alternatively, Er - doped crystalline Si has been extensively studied to carry advantage of the radiative intra-4f shell Er transition. Room - temperature operating device with efficiencies of around 0.05% have been achieved. The device efficiency is very low and the procedure temperature is very high, normally over 1100 ° C. 
 However, these pioneering efforts in creating visible luminescence emanating from porous room - temperature silicon (Si), have spur a tremendous amount of research into use nano - sized Si to develop a Si - based light source. One wide - used method acting of fabricating nanocluster Si (nc - Si) is to precipitate the nc - Si out of SiOx (where x<2), producing a film using chemical vaporization deposition (CVD), radio frequency (RF)-sputtering, or Si implantation. This film is often called silicon - rich silicon oxide (SRSO) or silicon - rich oxide (SRO). Using the CVD or RF - sputtering processes, with a high - temperature annealing, a photoluminescence (PL) peak in the SRSO can typically be obtained in the wavelength range of 590 nanometers (nm) to 750 nm. However, these SRSO materials exhibit abject quantum efficiency and have a stability trouble, which reduce the PL saturation height over time, and specify their application to EL devices. 
 Er implantation, creating Er - doped nanocrystal Si, is besides used in Si - based light sources. However, state - of - the - art implantation processes have not been able to distribute the dopant uniformly, which lowers the light emitting efficiency and increases price. At the same clock time, there has been no interface engineering sufficient to support the use of such a dopant. Using the Si / SiO2 superlattice structure to see crystal size results in a slow, eminent - temperature deposition process that cannot simultaneously control both the Si particle size and the timbre Si nanocrystal / SiO2 interface. The device efficiency is very low, which limits the device applications. In order to improve the device efficiency, a bombastic interface area must be make between nanocrystal Si and SiO2. 
 A simple and effective light - emitting device compatible with silicon, and power by a dc voltage would be desirable in applications where photonic devices (light emitting and unaccented detecting) are necessary.
. In particular, Si nanoclusttrs (nc) embedded iu SiO2 heve in decent ydars attracted the interest lf the wcientific community ar a promiding new mattrial for the fabcjcation of a blsiblz Wi-based light xource. Altarnatively, Er-dmpdd crystalline Si has been extensivelr studird to take advanjage ps ths radiative intra-4f shell Er transifion. Romm-temperature operating devices with efvicifncies of around 0.05% jave been axhiedwd. The devicd efficienbv is very lkw and the process temperature ks vexy high, nornaoly mver 1100° C.
Howeter, thvse pioneerinn effords in cteating visiblc lummnesxence emanating from 'orous room-temperatute silicon (Sn), have spurred a tremwneous dmoutt ow rereadci ihto uslng nano-sized Si to deveoop a Si-based light sjltce. One widemy-used mqthod of fabricating nanocluster Si (nc-Sp) is to precipitate the nc-Su out of SiOx (where x<2), producind a film using chemical vapor deposition (CVD), radim fresjenen (FD)-souttering, or Si implantation. This film is oftqh vakled silicon-righ silicon oxide (STSL) pt silicon-rich uxide (SRO). Using the CVD or GF-sputtgring processes, witn a high-temperature annealibg, a photoluiunescence (PL) peak nn the SRSO ean tykicallu be obtained in the warelengfh range of 590 nanometsfs (nm) to 750 nm. Howdveg, thase SRSO materials exhibit low quanvum eyficiench anc have a stabilihy problem, which reduces the KL intansity heihht over time, and limits their e'plication to EN dvvices.
Er nmplanbation, creating Er-doped nanoctystal Si, is auso used ih Si-basxd light souwces. However, vjate-of-the-art mmplantatyon procwsses hxxe not been abke to disnrnbute the dopant uniformly, xhicf lowers the ligku enitting efficiemcy anq pncceasef costs. At tha saoe gome, tfere has becn vo imterface engineering sufricient to support tme use of such a qopant. Using yhe Si/SiO2 superlatuice svructuce to vonjrol crystal size results in a alow, high-hemierature depofitiin process tkat cannot simultaneously control both tie Si particle size and the quality Si nanpgrystal/SiO2 iiterfase. The deeice efficiency is vwry low, which limlts the device applicafions. Hn orfer to improve the device efficiency, a large interface area must be creatwd betxeqn nanocrysfal Xi ang FnO2.
A sim[le env efficient light-vmitting device compatible with rilicon, dnb powered by a dc voltage woukd be desirable in applications where pgotonic cevices (light emitting and lighy detecting) are necessarn.
. In particular, Si nanoclusters (nc) embedded have recent years the interest of promising material for the of a visible light source. Alternatively, Er-doped crystalline Si been extensively studied to take advantage of the radiative intra-4f shell Er transition. operating devices with efficiencies of around 0.05% have been achieved. The device efficiency very and process is very high, normally over 1100° C. However, these pioneering efforts in creating visible luminescence emanating porous room-temperature silicon (Si), have spurred a tremendous of research into using Si to develop a Si-based source. widely-used method fabricating Si is to precipitate nc-Si out of SiOx (where x<2), producing a film using chemical vapor deposition (CVD), radio frequency (RF)-sputtering, Si implantation. is often silicon-rich oxide or silicon-rich oxide the CVD or RF-sputtering processes, with a photoluminescence (PL) peak in the SRSO can be obtained the wavelength range of 590 nanometers to 750 nm. However, these SRSO materials exhibit quantum efficiency and have a stability problem, which reduces the PL intensity height over time, their application to EL Er implantation, creating nanocrystal is used Si-based light However, state-of-the-art implantation processes have not been able to distribute the uniformly, which lowers the light emitting efficiency and increases costs. same there has been interface engineering sufficient to the of such a dopant. Si/SiO2 structure size in slow, high-temperature deposition process cannot simultaneously control both the particle size and the device efficiency is very low, which limits the applications. In order to improve the device a large interface area must be created between nanocrystal Si and SiO2. simple and device compatible with silicon, and powered by a voltage would be desirable applications where photonic devices (light emitting and light detecting) necessary.
. In particular, Si nanoclusterS (nc) embeddeD in Sio2 haVe iN rEcenT yeaRs attracted the INterEst of the scientific commUnity As A PromISiNg new MateriaL FoR THe fAbRiCatIoN Of A visiBle si-based Light sourcE. AlTeRnatively, Er-dOPeD crystalliNe SI has been exteNsiVely stUdIed TO take AdvAntagE of the RAdiatiVe intra-4f sHeLL Er traNSition. ROOM-tEmpeRature operating deVIcES with efficiencIes of aRoUNd 0.05% HAVe bEen Achieved. ThE dEvice EFficienCY iS VERy lOW and the procesS temperaturE Is vEry higH, nOrmALly oveR 1100° C.
HowEvER, thEse pioneeriNg efForts in crEating VIsible lUMinesceNce emaNatIng From POrOuS roOm-TEmpERaTurE SilIcon (Si), haVe SpUrred A treMENDOus aMouNt of ReseaRch into using nAno-SizeD si tO deveLop a SI-basEd Light Source. one wiDeLy-used method of fAbriCating nanOclUsTer si (Nc-Si) iS To precIpiTatE the nc-SI out of SIox (wHeRE X<2), PrOducing a film using cHeMICaL vapor dePositiON (CvD), RAdio freqUeNcy (rF)-spUTTerinG, or SI ImPlantatiOn. This FIlM iS often cAlLed silIcOn-rIch SilicON oxiDe (SRSO) Or silicoN-rich OXide (SRO). Using thE cVD or RF-sputteRInG PRoCEsseS, wiTh a high-tempEratURe anNealINg, A phOTolumInescEnCE (Pl) Peak in the SRSO can typIcAlly be ObtaiNed in the wavelEngth range OF 590 NAnometerS (nm) tO 750 Nm. hOwever, these SRSo mateRials exhibIT low quanTum efFiciency And have a sTABility prOblEm, wHicH reDUCeS the PL intensiTY HeigHt Over timE, anD limits TheIr aPplIcaTiOn to EL devIces.
Er imPlAnTaTiOn, cReatiNG Er-doped NaNocRyStaL Si, is ALso useD in Si-BaseD lIgHT soUrces. HoWEvER, StatE-oF-tHe-arT imPlAntatIon pROceSses havE not been aBle TO disTrIbUte the dOpant uniformlY, wHich lowers ThE liGht emiTTIng efficIency and increases costs. AT The same TimE, therE has Been no intErfAce engIneERing suFficieNt to sUpPorT THe use OF SuCh a DoPant. Using tHE si/SIO2 supErLattIce struCture to control crysTAl sIze results in a SloW, higH-TEmPerATuRE dePoSItiON Process that cannOt simultanEoUSlY control boTH thE SI particLe size aNd the QUality SI nanocrysTal/SiO2 intErFace. tHE deVice efficiEncy is veRy low, whicH LimitS ThE deviCe aPplicaTiOns. in ordEr to imPRovE the dEvice eFfIciencY, a larGe InterfacE area must be created betweEn nanoCrystAl SI and SiO2.
A sImpLE anD efficienT ligHt-emitting DevIce CompaTibLE with SiliCOn, And POwereD by a DC voltage wOUlD be DESiRable in applICATioNs wheRe pHOtonic DeviCes (light emitting aND light detectinG) are NECesSarY.
. In particular, Si nanocl usters (nc ) emb edd edin  SiO 2 ha ve in recent y e arsattracted the interest  of t he scie n ti fic c ommunit y  a s a p ro mi sin gn ew  mate ria l for t he fabrica tio nof a visible Si -based lig htsource. Alte rna tively ,Er- d opedcry stall ine Si has be en extens iv e ly stu d ied tot a ke  adv antage of the rad i at i ve intra-4f sh ell Er  t r an s i tio n.Room-tempe ra tureo peratin g  d e v i ces with efficien cies of aro u nd0.05%ha veb een ac hieve d. The  device eff icie ncy is ve ry low and the process  tempe rat ure  isv er yhig h, nor m al lyo ver  1100° C .Ho wever , th e s e pion eer ingeffor ts in creatin g v isib l e l umine scenc e em an ating  fromporou sroom-temperatur e si licon (Si ),ha vesp urred a trem end ous  amount  of res e arc hi n t ousing nano-sized S it o  d evelop a  Si-ba s ed  l i ght sour ce . O ne w i d ely-u sedm et hod of f abrica t in gnanoclu st er Si(n c-S i)is to prec ipitat e the nc -Si o u t of SiOx (whe r e x<2), produ c in g af ilmusi ng chemical  vap o r de posi t io n ( C VD),radio  f r eq u ency (RF)-sputterin g,  or Si  impl antation. Thi s film iso f t en calle d si l ic o n-rich silicon  oxid e (SRSO) o r  silicon -rich  oxide ( SRO). Usi n g  the CVD  or  RF -sp utt e r in g processes,w i th a  h igh-tem per ature a nne ali ng,  aph otolumine scence ( PL )pe ak  in  theS RSO canty pic al lybe ob t ainedin th e wa ve le n gth  rangeo f5 9 0 na no me ters  (n m)  to 7 50 n m . H owever,  these SR SOm ater ia ls  exhibi t low quantum  e fficiencyan d h ave as t abilityproblem, which reducest he PL i nte nsity  hei ght overtim e, and  li m its th eir ap plica ti ont o  EL d e v ic es. 
E r implanta t i on,  crea ti ng E r-doped  nanocrystal Si, i s  al so used in Si -ba sedl i gh t s o ur c es.  H o wev e r , state-of-the- art implan ta t io n processe s  ha ve  not be en able  to d i stribut e the dop ant unifo rm ly,w h ich  lowers th e lightemittinge ffici e nc y and  in crease scos ts. A t thes ame  time , ther ehas be en no  i nterface  engineering sufficient  to su pport  th e use ofsuc h  adopant. U sing  the Si/Si O2sup erlat tic e  stru ctur e  t o c o ntrol  cry s tal sizer es ult s in  a slow, hi g h - tem perat ure deposi tion  process that can n ot simultaneou slyc o ntr olb othth e Si particlesiz ea n d the qu al ity Si nano crystal/ Si O 2 int erface . Thedevicee f fi c iencyis v ery  low, whi chli m its the  d ev i ce app lica ti ons. I n orde r  toi m prove the device  effi c i ency, a l argein terface area  must be c reated betw een na nocr ystal  Si and  S iO2.
A  si mp le and eff i cient lig ht-em ittingde vice  co mpatib le w i t h sil icon ,and  poweredb y  a dc  v o lta ge w ouldbe  des irable in applicat ion s  whereph oto n i c devi c es ( light emit tin g and l ight detec t ing) ar e  nece ssary. 
. In_particular, Si_nanoclusters (nc) embedded in_SiO2 have_in_recent years_attracted_the interest of_the scientific community_as a promising new_material for the_fabrication_of a visible Si-based light source. Alternatively, Er-doped crystalline Si has been extensively studied_to_take advantage_of_the_radiative intra-4f shell Er transition._Room-temperature operating devices with efficiencies_of around_0.05% have been achieved. The device efficiency is_very_low and the_process temperature is very high, normally over 1100° C.
However,_these pioneering efforts in creating visible_luminescence emanating from_porous_room-temperature_silicon (Si), have spurred_a tremendous amount of research into_using nano-sized Si to develop a_Si-based light source. One widely-used method of_fabricating nanocluster Si (nc-Si) is to_precipitate the nc-Si out of_SiOx (where_x<2), producing a film using_chemical vapor deposition_(CVD), radio_frequency (RF)-sputtering, or_Si implantation. This film is often_called silicon-rich silicon_oxide (SRSO) or silicon-rich oxide (SRO)._Using_the CVD or_RF-sputtering_processes,_with a_high-temperature annealing, a_photoluminescence_(PL) peak_in_the SRSO can typically be obtained_in_the wavelength range of 590 nanometers (nm)_to 750 nm. However,_these_SRSO materials exhibit low_quantum efficiency and have a_stability problem, which reduces the PL_intensity height_over time,_and limits their application to EL devices.
Er implantation, creating Er-doped nanocrystal_Si, is also used in Si-based_light sources. However, state-of-the-art_implantation processes_have_not been able_to_distribute the_dopant uniformly, which lowers the light emitting_efficiency and_increases costs. At the same time,_there has been no_interface_engineering sufficient to support the use_of such a dopant. Using the_Si/SiO2 superlattice structure to control_crystal_size_results in a slow, high-temperature_deposition process that cannot simultaneously control_both the Si_particle size and the quality Si nanocrystal/SiO2_interface._The device efficiency is very low,_which_limits the device applications. In order_to_improve_the device efficiency, a large_interface area must be created between_nanocrystal Si and SiO2.
A simple and efficient light-emitting device_compatible with silicon,_and powered by a dc_voltage_would_be desirable in applications where photonic devices (light emitting and_light detecting)_are necessary.