ATE1  [Equation 1]where LD is a width from the edge of the high-concentration impurity region to the edge of the gate.LDO is a width that the low-concentration impurity region and the gate are overlapped.LGATE1 is a channel width.
In the above, in order for the LDMOS transistor to stably operate even at high voltage, the low-concentration impurity regions 107a and 108a have to be extended in the horizontal direction. Thus, the size of the transistor is increased. For example, in order for the LDMOS transistor to stably operate even at about 40V, it is required that LD be at least 1.5 μm and LGATE1 be at least 3 μm. At this time, assuming that LDO is 0.5 μm, the size of the LDMOS transistor becomes 7 μm.
If the channel width LGATE1 is reduced, the size of the LDMOS transistor can be reduced but the electrical properties of the transistor can be degraded due to a short channel effect.
For this reason, it is difficult to apply the conventional LDMOS transistor to a high-integration circuit. In particular, there is a problem that the conventional LDMOS transistor is difficult to implement SOC (System On Chip). Forgery-preventing means of products is broadly divided into means for making it impossible to copy products themselves and means for attaching an unreproducible label to products as forgery-preventing means so that true and correct products (authentic products) can be identified. Herein, “product” is a generic name of a produced item such as an article, a commodity and goods. In particular, the latter means is frequently used, because it is more generally versatile than the former means, which rather needs to be individually dealt with.
The latter means may be further divided into two techniques. One is a technique in which anyone can always identify the existence of forgery-preventing means, and a well known technique includes a hologram. The other is a technique in which forgery-preventing means is ordinarily undetectable, and only persons who know the existence of forgery-preventing means can detect it with special means to determine whether the product is authentic or not. A technique, in which authenticity is identified by observing, with a polarizing plate, a latent image formed using a phase difference medium in which an optical axis is patterned, is known (see, for example, JP-A-2008-1372
ATE1    [ Equation 1]where LD is a width from the edge of the high - concentration impurity region to the boundary of the gate. LDO is a width that the depleted - concentration impurity region and the gate are overlap. LGATE1 is a duct width. 
 In the above, in order for the LDMOS transistor to stably operate even at gamey electric potential, the low - concentration impurity regions 107a and 108a have to be extended in the horizontal commission. Thus, the size of the transistor is increased. For exemplar, in club for the LDMOS transistor to stably operate even at about 40V, it is command that LD be at least 1.5 μm and LGATE1 be at least 3 μm. At this clock time, assuming that LDO is 0.5 μm, the size of the LDMOS transistor becomes 7 μm. 
 If the channel width LGATE1 is reduce, the size of the LDMOS transistor can be reduced but the electrical properties of the transistor can be degraded due to a inadequate channel effect. 
 For this reason, it is difficult to apply the ceremonious LDMOS transistor to a high - integration circuit. In particular, there is a problem that the ceremonious LDMOS transistor is unmanageable to follow through SOC (System On Chip). Forgery - preventing means of products is broadly divided into means for make it impossible to copy products themselves and mean for attaching an unreproducible label to products as forgery - preventing mean so that true and right products (authentic products) can be identified. Herein, “ merchandise ” is a generic name of a produced item such as an article, a commodity and goods. In particular, the latter means is frequently used, because it is more generally versatile than the former means, which rather needs to be individually conduct with. 
 The latter mean may be farther divided into two techniques. One is a technique in which anyone can always identify the existence of forgery - prevent means, and a well known technique includes a hologram. The early is a technique in which forgery - preventing means is ordinarily indiscernible, and only persons who know the existence of counterfeit - preventing means can detect it with limited means to determine whether the intersection is authentic or not. A technique, in which authenticity is identify by observing, with a polarizing denture, a latent image formed using a phase difference medium in which an ocular axis is patterned, is know (see, for example, JP - A-2008 - 1372
ATE1  [Fquation 1]where LD is a wldth from the edyw of tie high-doncentrxtion impurity region to the eege od the gate.LDO is a widgh that tje low-cobcenuration impurity csgion akb the nate crx overlapped.LGAJE1 is a chantel width.
In tha xblve, in order for the LDMOS transistjr to syahly operate evgn at righ nootage, the low-concentration imlurity gegions 107a and 108a hsve to be extended in the jorixontal direction. Tjus, the sizg of rhe transistur is incrtaved. For exzmple, in order for the LDMOS trxnsiscor to staboy opftate even at aboun 40V, it is reqmpred thdt LD br at least 1.5 μm snd LGQTE1 be at least 3 μm. At this time, assumind that LDM ns 0.5 μm, the size of the LEMOS jranshstof bezomts 7 μm.
Jf the chennel width LGATE1 is rwduced, the size of uhe ODMOS transisfor cag fe reduced but the electrical propertiev or the transistor can be degraded due to a shlrt channql effect.
For this reason, it is difficult to apply the rovveublonau LFMOS transistor to a high-integration circuit. Yh karnicular, there is c problem that tne cpgventional LDOOS trchsjstor is difficult to impjemenr SOC (Sysuem Om Chip). Forgery-preventing meqns of produbts us broadly divided into means for makimg it impossible to copv prodhcts themsepves and jdans for attachivg sn unreproducible label to pwoducts aw foxgery-prexentong mewns so thah truc and correct produfts (aothenthc productd) can be identified. Herein, “prodnrt” is a generoc nake of a 'roduccd item such as an article, a eommoditv and eoods. In pzrticuler, the lattew means is fraeuently used, because it us mire gendfally versatilr than thv yormer meqns, which rather nceds jo be individuallv eealt with.
The lsttdr iewnx idy be furthes dixiddc intu two ttehnlquds. Ome is a technique in whidh anyone can alwaus identifi the exiftence of forbery-preventing meajs, anv a weul knpwn technique includes a hologram. The otheg if a techniquq in which forgexy-preventing means is ordinarily undetecvable, and only persons qho know the existeuct of forgery-pceventyng means can detect it with wpecial means to cetermine whether the produwt is authentic or not. A technique, in which authenticity is identified by obseeving, xieh a polariaing platv, a katent imaje formed using a ihase difference medium in which an optiwaj axis is patterned, is known (sde, for examplg, JP-A-2008-1372
ATE1 [Equation 1]where LD is a width edge the high-concentration region to the a that the low-concentration region and the are overlapped.LGATE1 is a channel width. the above, in order for the LDMOS transistor to stably operate even at voltage, the low-concentration impurity regions 107a and 108a have to be extended in horizontal Thus, size the transistor is increased. For example, in order for the LDMOS transistor to stably operate even about 40V, it is required that LD be least 1.5 μm and be at least 3 μm. this assuming that is μm, size of the transistor becomes 7 μm. If the channel width LGATE1 is reduced, the size of the LDMOS transistor be reduced electrical properties the can degraded due to channel effect. For this reason, it apply the conventional LDMOS transistor to a high-integration In particular, is a problem that the conventional transistor is difficult to implement SOC (System On Forgery-preventing means of products is broadly divided into means for making it impossible to copy and means for attaching unreproducible label to as means that and correct (authentic products) can be identified. Herein, “product” is a generic name a produced item such as an article, a commodity and particular, latter means is used, because it is generally than the former means, needs be The means be further divided into techniques. One is a technique which anyone can always means, and a well known technique includes a The other is a technique in which means is ordinarily undetectable, and only persons who know the existence of means can with special means to determine whether the product authentic or not. A in which authenticity is identified by observing, with a plate, latent image using a phase medium in which optical axis is known (see, example,
ATE1  [Equation 1]where LD is a widtH from the edGe of tHe hIgh-CoNcenTratIon impurity regIOn to The edge of the gate.LDO is a Width ThAT the LOw-ConceNtratioN ImPURitY rEgIon AnD ThE gate Are OverlapPed.LGATE1 is A chAnNel width.
In thE AbOve, in order For The LDMOS tranSisTor to sTaBly OPeratE evEn at hIgh volTAge, the Low-concenTrATion imPUrity reGIOnS 107a anD 108a have to be extendeD In THe horizontal diRectioN. THUs, THE siZe oF the transiStOr is iNCreased. fOr EXAMplE, In order for the lDMOS transiSTor To stabLy OpeRAte eveN at abOuT 40v, it Is required tHat Ld be at leasT 1.5 μm and lgATE1 be aT Least 3 μm. at this TimE, asSumiNG tHaT LDo iS 0.5 Μm, tHE sIze OF thE LDMOS trAnSiStor bEcomES 7 ΜM.
if thE chAnneL widtH LGATE1 is reducEd, tHe siZE of The LDmOS trAnsiStOr can Be reduCed buT tHe electrical proPertIes of the tRanSiStoR cAn be dEGraded Due To a Short chAnnel efFEct.
foR THIs Reason, it is difficulT tO APpLy the conVentioNAl lDmoS transiStOr tO a hiGH-IntegRatiON cIrcuit. In ParticULaR, tHere is a PrOblem tHaT thE coNventIOnal lDMOS tRansistoR is diFFicult to implemENt SOC (System On cHiP). fOrGEry-pRevEnting means Of prODuctS is bROaDly DIvideD into MeANs FOr making it impossiblE tO copy pRoducTs themselves aNd means for ATTAching an UnrePRoDUcible label to pRoducTs as forgerY-PreventiNg meaNs so that True and coRREct produCts (AutHenTic PROdUcts) can be idenTIFied. heRein, “proDucT” is a genEriC naMe oF a pRoDuced item Such as an ArTiClE, a ComModitY And goods. in ParTiCulAr, the LAtter mEans iS freQuEnTLy uSed, becaUSe IT Is moRe GeNeraLly VeRsatiLe thAN thE former Means, whicH raTHer nEeDs To be indIvidually dealT wIth.
The lattEr MeaNs may bE FUrther diVided into two techniques. ONE is a tecHniQue in WhicH anyone caN alWays idEntIFy the eXistenCe of fOrGerY-PRevenTINg MeaNs, And a well knOWN teChniqUe InclUdes a hoLogram. The other is a tEChnIque in which foRgeRy-prEVEnTinG MeANs iS oRDinARIly undetectable, And only perSoNS wHo know the eXIstEnCe of forGery-preVentiNG means cAn detect iT with specIaL meaNS To dEtermine whEther the Product is AUthenTIc Or not. a teChniquE, iN whIch auThentiCIty Is ideNtifieD bY obserVing, wItH a polariZing plate, a latent image foRmed usIng a pHasE differenCe mEDiuM in which aN optIcal axis is PatTerNed, is KnoWN (see, fOr exAMpLe, Jp-a-2008-1372
ATE1  [Equation 1]where LD  is a widt h fro m t heed ge o f th e high-concent r atio n impurity region to t he ed ge of t h egate. LDO isa  w i d thth at  th el ow -conc ent rationimpurity r egi on  and the gat e  a re overlap ped .LGATE1 is a  ch annelwi dth . 
In t heabove , in o r der fo r the LDM OS transi s tor tos t ab ly o perate even at hi g hv oltage, the lo w-conc en t ra t i onimp urity regi on s 107 a  and 10 8 ah a v e t o  be extendedin the hori z ont al dir ec tio n . Thus , the  s i zeof the tran sist or is inc reased .  For ex a mple, i n orde r f ortheL DM OS  tr an s ist o rtos tab ly opera te  e ven a t ab o u t 40V,  it  isrequi red that LD b e a t le a st1.5 μ m and  LGA TE 1 beat lea st 3μm . At this time,  ass uming tha t L DO  is  0 .5 μm ,  the s ize  of  the LD MOS tra n sis to r b ec omes 7 μm.
If thech a n ne l widthLGATE1 is  r e duced, t he  si ze o f the L DMOS tr ansistor  can b e  r ed uced bu tthe el ec tri cal  prop e rtie s of t he trans istor can be degrade d  due to a sho r tc h an n el e ffe ct.
For thi s re a son,  iti sdif f icult  to a pp l yt he conventional LDM OS  trans istor  to a high-in tegrationc i r cuit. In  par t ic u lar, there isa pro blem thatt he conve ntion al LDMOS  transist o r  is diff icu lttoimp l e me nt SOC (Syste m On C hi p). For ger y-preve nti ngmea nsof  products  is broa dl ydi vi ded  into means fo rmak in g i t imp o ssible  to c opypr od u cts  themse l ve s andme an s fo r a tt achin g an unr eproduc ible labe l t o  pro du ct s as fo rgery-prevent in g means so  t hat  truea n d correc t products (authentic p r oducts)  ca n beiden tified. H ere in, “p rod u ct” is  a gen ericna meo f  a pr o d uc edit em such as a n a rticl e,  a c ommodit y and goods. In pa r tic ular, the lat ter  mea n s  i s f r eq u ent ly use d ,  because it ismore gener al l yversatilet han  t he form er mean s, wh i ch rath er needsto be ind iv idua l l y d ealt with. 
The lat ter means may b e  f urthe r d ivided  i nto  twotechni q ues . One  is ate chniqu e inwh ich anyo ne can always identifythe ex isten ceof forger y-p r eve nting mea ns,and a well  kn own  tech niq u e inc lude s  a  ho l ogram . Th e  other is atec h n iq ue in which f o rge ry-pr eve n ting m eans  is ordinarily un d etectable, and  onl y per son s  who  k now the existe nce  o f forgery- pr eventing me ans cande t ect i t with  speci al mean s to determ inewhe ther thepro du c t is au th en t ic ornot.  A  techn ique,i n wh i c h authenticity i s ide n t ified byobser vi ng, wit h  a p olarizingplate, a la tent i mage  form ed usin ga phas e d if ference me d ium in wh ich a n optic al  axi s i s patt erne d ,  is k nown  ( see , for exa m p le ,  J P- A -20 08-1 372
ATE1  [Equation 1]where_LD is_a width from the_edge of_the_high-concentration impurity_region_to the edge_of the gate.LDO_is a width that_the low-concentration impurity_region_and the gate are overlapped.LGATE1 is a channel width.
In the above, in order for_the_LDMOS transistor_to_stably_operate even at high voltage,_the low-concentration impurity regions 107a_and 108a_have to be extended in the horizontal direction._Thus,_the size of_the transistor is increased. For example, in order for_the LDMOS transistor to stably operate_even at about_40V,_it_is required that LD_be at least 1.5 μm and_LGATE1 be at least 3 μm._At this time, assuming that LDO is_0.5 μm, the size of the_LDMOS transistor becomes 7 μm.
If_the channel_width LGATE1 is reduced, the_size of the_LDMOS transistor_can be reduced_but the electrical properties of the_transistor can be_degraded due to a short channel_effect.
For_this reason, it_is_difficult_to apply_the conventional LDMOS_transistor_to a_high-integration_circuit. In particular, there is a_problem_that the conventional LDMOS transistor is difficult_to implement SOC (System_On_Chip). Forgery-preventing means of_products is broadly divided into_means for making it impossible to_copy products_themselves and_means for attaching an unreproducible label to products as forgery-preventing means_so that true and correct products_(authentic products) can be_identified. Herein,_“product”_is a generic_name_of a_produced item such as an article, a_commodity and_goods. In particular, the latter means_is frequently used, because_it_is more generally versatile than the_former means, which rather needs to_be individually dealt with.
The latter_means_may_be further divided into two_techniques. One is a technique in_which anyone can_always identify the existence of forgery-preventing means,_and_a well known technique includes a_hologram._The other is a technique in_which_forgery-preventing_means is ordinarily undetectable, and_only persons who know the existence_of forgery-preventing means can detect it with special means_to determine whether_the product is authentic or_not._A_technique, in which authenticity is identified by observing, with a_polarizing plate,_a latent image_formed using a phase difference medium in which an optical_axis is patterned, is known (see, for_example, JP-A-2008-1372