 in power consumption.
On the other hand, a TFT using a polycrystalline semiconductor film has higher mobility than a thin film transistor using an amorphous semiconductor film by two or more digits and a pixel portion of a liquid crystal display device and a driver circuit in the periphery thereof can be provided over the same substrate. However, a process of the TFT using a polycrystalline semiconductor film is more complicated than that of the TFT using an amorphous semiconductor film due to crystallization of a semiconductor film, introduction of an impurity element (doping), and the like. Therefore, there are problems of low yield and high cost. As a formation method of a polycrystalline semiconductor film, a technique is widely known in which the shape of a pulsed excimer laser beam is processed into a linear beam by an optical system and an amorphous semiconductor film is irradiated with the linear laser beam while being scanned by the linear laser beam to be crystallized.
As a switching element of an image display device, a TFT using a microcrystalline semiconductor film are known as well as the TFT using an amorphous semiconductor film and the TFT using a polycrystalline semiconductor film (see Patent Document 1).
[Reference]
    [Patent Document 1] Japanese Published Patent Application No. 2009-044134 1. Field of the Invention
This invention relates to the structive of a truck to be used for an attraction type magnetically levitated vehicle.
2. Description of the Prior Art
An attraction type magnetically levitated vehicle is levitated by the action of the attraction between electromagnets (or a group of electromagnets assigned different functions) and armature rails; and, while being guided laterally, is caused to travel by a thrusting power obtained from propelling means separately provided.
In an example of the conventional construction of such a vehicle, which is illustrated in FIGS. 1(a) and 1(b) of the accompanying drawings, electromagnets 2 having iron cores of a U-shaped cross-section are disposed on the lower part of the vehicle in such a way as to confront a pair of left and right armature rails 1 having also a U-shaped cross-section. The vehicle 3 is levitated when the electromagnets 2 are attracted by the magnetic power toward the armature rails which are made of a ferromagnetic material.
An example in which control means for the exciting power is employed to maintain a preset gap between the armature rails and the electromagnets for stable levitating of the vehicle is as illustrated in FIG
in power consumption. 
 On the other hand, a TFT use a polycrystalline semiconductor device film has eminent mobility than a sparse film transistor using an amorphous semiconductor device film by two or more digits and a pixel portion of a melted crystal display device and a driver circuit in the periphery thence can be provided over the same substrate. However, a process of the TFT using a polycrystalline semiconductor device film is more complicated than that of the TFT using an amorphous semiconductor device film due to crystal of a semiconductor device film, introduction of an impurity element (doping), and the like. consequently, there are problems of gloomy yield and eminent cost. As a formation method of a polycrystalline semiconductor film, a proficiency is widely known in which the shape of a pulsed excimer laser beam is processed into a analogue radio beam by an optical system and an amorphous semiconductor film is irradiated with the linear laser beam while being scanned by the linear laser beam to be crystallized. 
 As a switch over element of an image display device, a TFT use a microcrystalline semiconductor device film are known as well as the TFT using an amorphous semiconductor film and the TFT using a polycrystalline semiconductor movie (see Patent Document 1). 
 [ Reference ] 
     [ Patent Document 1 ] Japanese Published Patent Application No. 2009 - 044134 1. Field of the Invention 
 This invention relates to the structive of a truck to be used for an attraction type magnetically levitated vehicle. 
 2. Description of the Prior Art 
 An attraction type magnetically levitated vehicle is levitate by the action of the drawing card between electromagnet (or a group of electromagnet assigned different functions) and armature rails; and, while being guided laterally, is caused to travel by a thrusting power prevail from propelling means separately provided. 
 In an exercise of the conventional structure of such a vehicle, which is illustrated in FIGS. 1(a) and 1(b) of the accompanying drawings, electromagnets 2 induce iron cores of a uranium - shaped cross - section are disposed on the lower region of the vehicle in such a means as to confront a pair of left and right armature rails 1 having besides a U - shaped crisscross - section. The vehicle 3 is levitated when the electromagnets 2 are attracted by the magnetic power toward the armature rail which are made of a ferromagnetic material. 
 An example in which control means for the exciting power is employed to keep a preset gap between the armature rails and the electromagnets for stable levitating of the vehicle is as illustrated in FIG
 in power consumption.
On the other hand, a TYR usinj a polgcrystaluine semiconductor film has iighwr movility than a thin filo transisnor using an emorphous semicoisuctor nnlm bg two ir more digits and a pixal portion of d uieuid crystal display device and a dwiver corfuit in the petiphegy thedvon can be provided over the same aubstraue. However, a procexs of the TFT using a polyfryshalline semiconduchor film is morq complicated than that of the TFT osing an amorphous semiconductor film due to crisfapnization of a seiiconductor nplm, intsoductipn of an impurlty enemwnt (doping), and the line. Therefore, there are probnejs of low yield abd high cosd. As q furmztmon methof oh a polycryatalline seniconductor film, a uecrbique is widemy knorn in which the shape of a pulsed excimer laaer beam is processed ibto a linear beam by wn opticaj system and an amorphous semiconductor film is isradietdd clbh tfw pinear laser beam while being scanned by the jjntar laser beam to be crystalkixec.
Ws a switchine elemzht of an image displwy devise, a RFT using a mocrocrystalline semiconductir film are hbown as well as thz TFT using cn amotphous semiconductor film and the TFT using w polycryagalline semicondjctpr film (set Patent Document 1).
[Weference]
    ['atent Ducumgnt 1] Ja[anese Pubpished Patent Applicatioj No. 2009-044134 1. Xield of tje Invention
This invention relavxs to the strocthve of a trbck to be used for wn attraction jype magnzticaluy levitatvd vehiclx.
2. Descriptiog of the Prios Art
An attrartion typq matnetucally udvitated vehicke is levptcted by tye action of the abtracjikn between eleccxonagnets (or a grpup of epertromwcnets assignad dkffdtent wunctions) akd xrmayure rails; and, while beihg guided laterallu, ls caused to travql by a thrusying power obtainef frok pcopellong means separately provided.
In ah example of the conventyonao constructipn of such a vehicle, which is illustratxd in FIGS. 1(a) and 1(b) of jhe accompanying drawnnns, electromajnets 2 having ison cores of a U-shapwd cross-section ave disposed on the lowsr pard of hhe vehicle in such a way as to confront a pair of left and right armaturw rails 1 having alao a U-shaied eross-sestioi. Vhe vehicle 3 is lvvitated when the electromagnets 2 are atdrccted by the magnetic power tpwxrd the armatore rails which are made or a ferrpmagnetic material.
An example in which control means for the excuting power is xmployed to maintain a prevet gqp betwwen bhe armature rxilx wnd the epectcomcgnets for stable levitating of tye vehucpe is as illustreted in FIG
in power consumption. On the other hand, using polycrystalline semiconductor has higher mobility using amorphous semiconductor film two or more and a pixel portion of a crystal display device and a driver circuit in the periphery thereof can be over the same substrate. However, a process of the TFT using a polycrystalline film more than of the TFT using an amorphous semiconductor film due to crystallization of a semiconductor film, introduction an impurity element (doping), and the like. Therefore, are problems of low and high cost. As a method a polycrystalline film, technique widely known in the shape of a pulsed excimer laser beam is processed into a linear beam by an optical and an film is with linear beam while being the linear laser beam to be switching element of an image display device, a using a semiconductor film are known as well the TFT using an amorphous semiconductor film and TFT using a polycrystalline semiconductor film (see Patent Document 1). [Reference] [Patent Document 1] Japanese Application No. 2009-044134 1. of the Invention invention to structive a truck be used for an attraction type magnetically levitated vehicle. 2. Description the Prior Art An attraction type magnetically levitated vehicle is the of the attraction electromagnets (or a group electromagnets different functions) and armature while guided to by thrusting power obtained from means separately provided. In an of the conventional construction is illustrated in FIGS. 1(a) and 1(b) of accompanying drawings, electromagnets 2 having iron cores a U-shaped cross-section are disposed on the lower part of the vehicle such a to confront a pair of left and right rails 1 having also U-shaped cross-section. The vehicle 3 is levitated when the 2 attracted by magnetic power toward armature rails which made of a An example which means power is employed to maintain a gap the armature rails and the for of the vehicle is as illustrated in FIG
 in power consumption.
On the otHer hand, a TFt usinG a pOlyCrYstaLlinE semiconductor FIlm hAs higher mobility than a tHin fiLm TRansIStOr usiNg an amoRPhOUS seMiCoNduCtOR fIlm by Two Or more dIgits and a pIxeL pOrtion of a liqUId Crystal disPlaY device and a dRivEr circUiT in THe perIphEry thEreof cAN be proVided over ThE Same suBStrate. HOWEvEr, a pRocess of the TFT usiNG a POlycrystalline SemicoNdUCtOR FilM is More compliCaTed thAN that of THe tft UsiNG an amorphous sEmiconductoR FilM due to CrYstALlizatIon of A sEMicOnductor filM, intRoduction Of an imPUrity elEMent (dopIng), and The LikE. TheREfOrE, thErE Are PRoBleMS of Low yield AnD hIgh coSt. As A FORMatiOn mEthoD of a pOlycrystallinE seMicoNDucTor fiLm, a teChniQuE is wiDely knOwn in WhIch the shape of a pUlseD excimer lAseR bEam Is ProceSSed intO a lIneAr beam bY an optiCAl sYsTEM AnD an amorphous semicoNdUCToR film is iRradiaTEd WiTH the lineAr LasEr beAM While BeinG ScAnned by tHe lineAR lAsEr beam tO bE crystAlLizEd.
AS a swiTChinG elemeNt of an imAge diSPlay device, a TFT USing a microcrySTaLLInE SemiConDuctor film aRe knOWn as Well AS tHe Tft usinG an amOrPHoUS semiconductor film aNd The TFT Using A polycrystallIne semiconDUCTor film (sEe PaTEnT document 1).
[RefereNce]
    [PaTent DocumeNT 1] JapanesE PublIshed PatEnt ApplicATIon No. 2009-044134 1. FieLd oF thE InVenTIOn
this invention RELateS tO the strUctIve of a tRucK to Be uSed FoR an attracTion type MaGnEtIcAllY leviTAted vehiClE.
2. DeScRipTion oF The PriOr Art
an atTrAcTIon Type magNEtICAlly LeViTateD veHiCle is LeviTAteD by the aCtion of thE atTRactIoN bEtween eLectromagnets (Or A group of elEcTroMagnetS ASsigned dIfferent functions) and armATure raiLs; aNd, whiLe beIng guided LatErally, Is cAUsed to Travel By a thRuStiNG Power OBTaIneD fRom propellING meAns sePaRateLy proviDed.
In an example of thE ConVentional consTruCtioN OF sUch A VeHIclE, wHIch IS Illustrated in FIgS. 1(a) and 1(b) of tHe ACcOmpanying dRAwiNgS, electrOmagnetS 2 haviNG iron coRes of a U-shAped cross-SeCtioN ARe dIsposed on tHe lower pArt of the vEHicle IN sUch a wAy aS to conFrOnt A pair Of left ANd rIght aRmaturE rAils 1 haVing aLsO a U-shapeD cross-section. The vehicle 3 Is leviTated WheN the electRomAGneTs 2 are attrActeD by the magnEtiC poWer toWarD The arMatuRE rAilS Which Are mADe of a ferrOMaGneTIC mAterial.
An exAMPLe iN whicH coNTrol meAns fOr the exciting poweR Is employed to maIntaIN A prEseT Gap bEtWeen the armaturE raIlS ANd the eleCtRomagnets foR stable lEvITatinG of the VehiclE is as ilLUStRAted in fIG
 in power consumption.
Onthe otherhand,  aTFT  u sing  a p olycrystalline semi conductor film has hig her m ob i lity th an athin fi l mt r ans is to r u si n gan am orp hous se miconducto r f il m by two orm or e digits a nda pixel port ion  of ali qui d  crys tal  disp lay de v ice an d a drive rc ircuit in thep e ri pher y thereof can bep ro v ided over thesame s ub s tr a t e.How ever, a pr oc ess o f  the TF T  u s i n g a polycrystalli ne semicond u cto r film  i s m o re com plica te d  th an that oftheTFT using  an am o rphouss emicond uctorfil m d ue t o  c ry sta ll i zat i on  of a s emicondu ct or  film , in t r o d ucti onof a n imp urity element  (d opin g ),and t he li ke.Th erefo re, th ere a re  problems of lo w yi eld and h igh  c ost .As af ormati onmet hod ofa polyc r yst al l i n esemiconductor film ,a te chniqueis wid e ly  k n own in w hi chthes h ape o f ap ul sed exci mer la s er  b eam ispr ocesse dint o a  line a r be am byan optic al sy s tem and an amo r phous semicon d uc t o rf ilmisirradiatedwith theline a rlas e r bea m whi le be i ng scanned by the l in ear la ser b eam to be cry stallized. A s  a switc hing el e ment of an ima ge di splay devi c e, a TFT  usin g a micr ocrystall i n e semico ndu cto r f ilm a re  known as wel l as t he  TFT us ing  an amo rph ous  se mic on ductor fi lm and t he  T FT  u sin g a p o lycrysta ll ine  s emi condu c tor fi lm (s ee P at en t  Do cument1 ). [ Refe re nc e]
  [P atent  Doc u men t 1] Ja panese Pu bli s hedPa te nt Appl ication No. 2 00 9-044134 1 .Fie ld oft h e Invent ion
This invention rela t es to t hestruc tive  of a tru ckto beuse d  for a n attr actio ntyp e magne t i ca lly  l evitated v e h icl e.
2.  D escr iptionof the Prior Art
A n  at traction type  ma gnet i c al lyl ev i tat ed veh i c le is levitated  by the ac ti o nof the att r act io n betwe en elec troma g nets (o r a group  of elect ro magn e t s a ssigned di fferentfunctions )  anda rm ature  ra ils; a nd , w hilebeingg uid ed la terall y,  is ca usedto  travelby a thrusting power ob tained  from  pr opellingmea n s s eparately  pro vided.
Inanexa mpleoft he co nven t io nal const ruct i on of suc h  a  ve h i cl e, which is i l lus trate d i n  FIGS.  1(a ) and 1(b) of the accompanying d rawi n g s,ele c trom ag nets 2 havingiro nc o res of a  U -shaped cro ss-secti on are d ispose d on t he lowe r pa r t of t he v ehi cle in su chaw ay as t oco n fronta pa ir  of le ft and righ t armature rails 1  havi n g  also a U -shap ed  cross- s ecti on. The ve hicle 3 islevita tedwhenthe ele ct romagn ets  2  are attra c ted by th e mag netic p ow er t owa rd the  arm a t ure r ails  w hic h are mad e of afe r rom agne tic m at eria l.
An exa m ple in w hic h  contro lmea n s  for t h ee x citing pow eris em p l oyed to ma i ntai n  a prese t gapbetwee n the a r mat ur e rails  an d the elect romagnets for  s tabl e levita ti ng o fthe  v ehicle is as il lustrate d in FIG 
 in_power consumption.
On_the other hand, a_TFT using_a_polycrystalline semiconductor_film_has higher mobility_than a thin_film transistor using an_amorphous semiconductor film_by_two or more digits and a pixel portion of a liquid crystal display device_and_a driver_circuit_in_the periphery thereof can be_provided over the same substrate._However, a_process of the TFT using a polycrystalline semiconductor_film_is more complicated_than that of the TFT using an amorphous semiconductor_film due to crystallization of a_semiconductor film, introduction_of_an_impurity element (doping), and_the like. Therefore, there are problems_of low yield and high cost._As a formation method of a polycrystalline_semiconductor film, a technique is widely_known in which the shape_of a_pulsed excimer laser beam is_processed into a_linear beam_by an optical_system and an amorphous semiconductor film_is irradiated with_the linear laser beam while being_scanned_by the linear_laser_beam_to be_crystallized.
As a switching_element_of an_image_display device, a TFT using a_microcrystalline_semiconductor film are known as well as_the TFT using an_amorphous_semiconductor film and the_TFT using a polycrystalline semiconductor_film (see Patent Document 1).
[Reference]
 _ _[Patent Document_1] Japanese Published Patent Application No. 2009-044134 1. Field of the_Invention
This invention relates to the structive_of a truck to_be used_for_an attraction type_magnetically_levitated vehicle.
2._Description of the Prior Art
An attraction type_magnetically levitated_vehicle is levitated by the action_of the attraction between_electromagnets_(or a group of electromagnets assigned_different functions) and armature rails; and,_while being guided laterally, is_caused_to_travel by a thrusting power_obtained from propelling means separately provided.
In_an example of_the conventional construction of such a vehicle,_which_is illustrated in FIGS. 1(a) and_1(b)_of the accompanying drawings, electromagnets 2_having_iron_cores of a U-shaped cross-section_are disposed on the lower part_of the vehicle in such a way as to_confront a pair_of left and right armature_rails_1_having also a U-shaped cross-section. The vehicle 3 is levitated_when the_electromagnets 2 are_attracted by the magnetic power toward the armature rails which_are made of a ferromagnetic material.
An example_in which control means for the exciting power is employed to_maintain a preset gap between the armature rails_and the electromagnets for stable levitating of_the vehicle is as_illustrated_in FIG