 transition metal layers as Cu diffusion barriers, these studies including such materials as chromium, tantalum, molybdenum and tungsten. Each of these materials exhibits low miscibility in Cu. More recently, other materials, such as ruthenium (Ru) and rhodium (Rh), have been identified as potential barrier layers since they are expected to behave similarly to conventional refractory metals. However, the use of Ru or Rh can permit the use of only one barrier layer, as opposed to two layers, such as Ta/TaN. This observation is due to the adhesive and barrier properties of these materials. For example, one Ru layer can replace the Ta/TaN barrier layer. Moreover, current research is finding that the one Ru layer can further replace the Cu seed layer, and bulk Cu fill can proceed directly following Ru deposition. This observation is due to good adhesion between the Cu and the Ru layers.
Conventionally, Ru layers-can be formed by thermally decomposing a ruthenium-containing precursor, such as a ruthenium carbonyl precursor, in a thermal chemical vapor deposition (TCVD) process. Material properties of Ru layers that are deposited by thermal decomposition of metal-carbonyl precursors (e.g., Ru3(CO)12), can deteriorate when the substrate temperature is lowered to below about 400° C. As a result, an increase in the (electrical) resistivity of the Ru layers and poor surface morphology (e.g., the formation of nodules) at low deposition temperatures has been attributed to increased incorporation of CO reaction by-products into the thermally deposited Ru layers. Both effects can be explained by a reduced CO desorption rate from the thermal decomposition of the ruthenium-carbonyl precursor at substrate temperatures below about 400° C.
Additionally, the use of metal-carbonyls, such as ruthenium carbonyl, can lead to poor deposition rates due to their low vapor pressure, and the transport issues associated therewith. Overall, the inventor has observed that current deposition systems suffer from such a low rate, making the deposition of such metal films impractical. The present invention relates to a ball used in ball games such as a volley ball and a soccer ball, and more particularly to a ball having a fabric layer as a reinforcing layer obtained by sewing together a plurality of pieces of woven fabric in a specific manner.
Hitherto, in the technical field of the above kinds of balls used in ball games, there is known a structure comprising a rubber hollow tube or bladder, a
transition metal layers as Cu diffusion barrier, these cogitation including such fabric as chromium, tantalum, molybdenum and tungsten. Each of these material exhibits low miscibility in Cu. More recently, early materials, such as ruthenium (Ru) and rhodium (Rh), have been identified as potential barrier layer since they are expected to behave similarly to ceremonious refractory metals. However, the use of Ru or Rh can permit the habit of only one barrier layer, as opposed to two layers, such as Ta / TaN. This observation is ascribable to the adhesive and barrier properties of these materials. For example, one Ru level can replace the Ta / TaN barrier layer. Moreover, current research is finding that the one Ru level can further substitute the Cu seed layer, and bulk Cu filling can proceed directly following Ru deposition. This observation is due to effective adhesion between the Cu and the Ru layers. 
 Conventionally, Ru layers - can be formed by thermally decomposing a ruthenium - containing precursor, such as a ruthenium carbonyl precursor, in a thermal chemical vapor deposition (TCVD) procedure. Material properties of Ru level that are situate by thermal decomposition of metal - carbonyl precursors (e.g., Ru3(CO)12), can deteriorate when the substrate temperature is lowered to below about 400 ° C. As a resultant role, an increase in the (electrical) resistivity of the Ru layers and poor surface morphology (for example, the formation of nodules) at low deposition temperatures has been attributed to increased internalization of CO chemical reaction by - merchandise into the thermally deposited Ru layers. Both effects can be explained by a reduced CO desorption rate from the thermal decomposition of the ruthenium - carbonyl harbinger at substrate temperatures below approximately 400 ° C. 
 Additionally, the use of metal - carbonyls, such as ruthenium carbonyl, can lead to poor deposit rates due to their low vapor pressure, and the transport emergence associated therewith. Overall, the inventor has observe that current deposition organization suffer from such a low rate, making the deposit of such metal films impractical. The present invention refer to a ball used in ball games such as a volley musket ball and a soccer ball, and more particularly to a testis having a fabric level as a reinforcing layer obtained by sewing together a plurality of pieces of woven fabric in a specific manner. 
 Hitherto, in the technical field of the above kinds of balls use in musket ball game, there is known a social organization comprising a rubber hollow pipe or bladder, a
 trwnsition metal layers as Cu diffusion bceriers, these studies including such materials as cyromiym, tantalum, molybdenum and tungdten. Eacy of rhese matecjals exmnbits pow kmscibility in Co. More recendly, other matesixld, such as ruthenium (Ru) and rhodium (Wh), have bfen identified as kotqntizl barrier layers since they are espected to behave sikilarly to conventional revrachory metals. Howeveg, the use od Ru ir Rh can pefmit the use of only ohe barrier layer, as opposed to gwo lcyers, such qs Ta/HdN. This obsxrvatijn is due to the adhasive amd barrier proiertixs od these materials. For example, one Ru laier can re[lcce the Ta/TaN barrier lqyer. Koremver, xurfenu rxsezrch id fmnding that the one Ru layer can further te[oace the Cu ssed larew, and bulk Cu fill can proceed directly fomlowing Ru deposition. Tyis observation is dug to good wdhesion between the Cu and the Ru layers.
Conventimnallb, Fu oaners-zqn be formed by thermally decomposing a ruthenitj-cpnnaining precursor, such as a tuhhrgium carbonyl precuxaod, in a thermal chelical vwpor eepositiog (TCFD) process. Material propertues of Ru lajers that are depositeb by thermal decpmposotion of metal-carbonyl 'recuraors (e.g., Ru3(CL)12), can detsfiorate when the sunstsate temkdrature is lowereq to belox abobt 400° C. As a rgsult, ag increase in tma (electrical) resishiviti of tve Ru layegs and poor surface morphology (x.j., the formatipn of nodules) at lpw deposition temperatures kas been attrkbuted to pncreased incorporatyon of CO reawjion by-producvs into tre tyermqlly deousited Ru layets. Both eyyects can be explained by a reahced CO desorptnub rate from the thdrmwl dxcompjvition of tha rughevoum-cafbonyl kxecmrsur ay substrate temperatgres below about 400° C.
Addotlonally, tye use os metal-carbonuls, such as ruthenlum cerbonyu, can lewd to poor deposition rates dus to theig ljw vapor prefsurc, anq the tranxport issues associated therewith. Overaol, the inventor haw observed that curtenu deposition xysteis suffer from such a low ratw, making the depoxition of such metal rilms hmpraftical. The present invention relates to a ball used in ball games such as a volley ball and a spccer bcll, and mjre 'acticularly to a bsll having a fabric layer as a ceinforcinc jayer obtained by sewing togrtfer a pluralijy of pieces of woven fabrjc in a xpecific manner.
Hitherto, in the yechnical field of the anove kindw of galls laev in ball games, therr is kuown a structyre gomprising a rjbbrr hollow tkbe pr bladder, a
transition metal layers as Cu diffusion barriers, including materials as tantalum, molybdenum and exhibits miscibility in Cu. recently, other materials, as ruthenium (Ru) and rhodium (Rh), been identified as potential barrier layers since they are expected to behave similarly conventional refractory metals. However, the use of Ru or Rh can permit the of one layer, opposed to two layers, such as Ta/TaN. This observation is due to the adhesive and barrier of these materials. For example, one Ru layer replace the Ta/TaN barrier Moreover, current research is finding the Ru layer further the seed layer, and Cu fill can proceed directly following Ru deposition. This observation is due to good adhesion between the and the Conventionally, Ru be by decomposing a ruthenium-containing as a ruthenium carbonyl precursor, in vapor deposition (TCVD) process. Material properties of Ru that are by thermal decomposition of metal-carbonyl precursors Ru3(CO)12), can deteriorate when the substrate temperature is to below about 400° C. As a result, an increase in the (electrical) resistivity of layers and poor surface (e.g., the formation nodules) low temperatures been attributed increased incorporation of CO reaction by-products into the thermally deposited Ru Both effects can be explained by a reduced CO desorption the decomposition of the precursor at substrate temperatures about C. Additionally, the use such ruthenium to deposition due to their low pressure, and the transport issues therewith. Overall, the inventor systems suffer from such a low rate, making deposition of such metal films impractical. The invention relates to a ball used in ball games such as a ball and ball, and more particularly to a ball having fabric layer as a layer obtained by sewing together a plurality of pieces woven in a manner. Hitherto, in technical field of above kinds of in ball there known a rubber hollow tube or bladder,
 transition metal layers as Cu Diffusion bArrieRs, tHesE sTudiEs inCluding such matERialS as chromium, tantalum, molYbdenUm ANd tuNGsTen. EaCh of theSE mATEriAlS eXhiBiTS lOw misCibIlity in cu. More receNtlY, oTher materialS, SuCh as ruthenIum (ru) and rhodium (rh), hAve beeN iDenTIfied As pOtentIal barRIer layErs since tHeY Are expECted to bEHAvE simIlarly to conventioNAl REfractory metalS. HowevEr, THe USE of ru oR Rh can permIt The usE Of only oNE bARRIer LAyer, as opposed To two layers, SUch As Ta/Tan. THis OBservaTion iS dUE to The adhesive And bArrier proPertieS Of these MAterialS. For exAmpLe, oNe Ru LAyEr Can RePLacE ThE Ta/tAN bArrier laYeR. MOreovEr, cuRRENT resEarCh is FindiNg that the one RU laYer cAN fuRther ReplaCe thE CU seed Layer, aNd bulK CU fill can proceed DireCtly folloWinG RU dePoSitioN. this obSerVatIon is duE to good ADheSiON BEtWeen the Cu and the Ru lAyERS.
COnventioNally, RU LaYeRS-can be foRmEd bY theRMAlly dEcomPOsIng a ruthEnium-cONtAiNing preCuRsor, suCh As a RutHeniuM CarbOnyl prEcursor, iN a theRMal chemical vapOR deposition (TCvd) pROCeSS. MatEriAl propertieS of RU LayeRs thAT aRe dEPositEd by tHeRMaL Decomposition of metaL-cArbonyL precUrsors (e.g., Ru3(CO)12), cAn deteriorATE When the sUbstRAtE Temperature is lOwereD to below abOUt 400° C. As a reSult, aN increasE in the (eleCTRical) resIstIviTy oF thE rU lAyers and poor sURFace MoRphologY (e.g., The formAtiOn oF noDulEs) At low depoSition teMpErAtUrEs hAs beeN AttributEd To iNcReaSed inCOrporaTion oF CO rEaCtIOn bY-producTS iNTO the ThErMallY dePoSited ru laYErs. both effEcts can be ExpLAineD bY a Reduced cO desorption rAtE from the thErMal DecompOSItion of tHe ruthenium-carbonyl precURsor at sUbsTrate TempEratures bEloW about 400° c.
AdDItionaLly, the Use of MeTal-CARbonyLS, SuCh aS rUthenium caRBOnyL, can lEaD to pOor depoSition rates due to thEIr lOw vapor pressuRe, aNd thE TRaNspORt ISsuEs ASsoCIAted therewith. OvErall, the inVeNToR has observED thAt Current DepositIon sySTems sufFer from suCh a low ratE, mAkinG THe dEposition oF such metAl films imPRactiCAl. the prEseNt inveNtIon RelatEs to a bALl uSed in Ball gaMeS such aS a volLeY ball and A soccer ball, and more partiCularlY to a bAll Having a faBriC LayEr as a reinForcIng layer obTaiNed By sewIng TOgethEr a pLUrAliTY of piEces OF woven fabRIc In a SPEcIfic manner.
HITHErtO, in thE teCHnical FielD of the above kinds oF Balls used in balL gamES, TheRe iS KnowN a Structure comprIsiNg A RUbber holLoW tube or bladDer, a
 transition metal layers a s Cu diffu sionbar rie rs , th esestudies includ i ng s uch materials as chrom ium,ta n talu m ,molyb denum a n dt u ngs te n.  Ea ch of  thes e m aterial s exhibits  lo wmiscibilityi nCu. More r ece ntly, othermat erials ,suc h  as r uth enium  (Ru)a nd rho dium (Rh) ,h ave be e n ident i f ie d as  potential barrie r  l a yers since the y areex p ec t e d t o b ehave simi la rly t o  conven t io n a l  re f ractory metal s. However, the  use o fRuo r Rh c an pe rm i t t he use of o nlyone barri er lay e r, as o p posed t o twolay ers , su c has  Ta /T a N.T hi s o b ser vation i sdu e tothea d h e sive  an d ba rrier  properties o f t hese mat erial s. Fo r ex am ple,one Ru  laye rcan replace the  Ta/ TaN barri erla yer .Moreo v er, cu rre ntresearc h is fi n din gt h a tthe one Ru layer c an f ur ther rep lace t h eCu seed lay er , a nd b u l k Cufill ca n procee d dire c tl yfollowi ng  Ru de po sit ion . Thi s  obs ervati on is du e tog ood adhesion b e tween the Cua nd t he Ru l aye rs.
Convent iona l ly,Ru l a ye rs- c an be  form ed by thermally decomposi ng  a rut heniu m-containingprecursor, s u ch as aruth e ni u m carbonyl pre curso r, in a th e rmal che mical  vapor d eposition ( TCVD) pr oce ss.  Ma ter i a lproperties of R u la ye rs that  ar e depos ite d b y t her ma l decompo sition o fme ta l- car bonyl precurso rs  (e .g .,Ru3(C O )12),can d eter io ra t e w hen the su b s trat ete mper atu re  is l ower e d t o below  about 40 0°C . As  a  r esult,an increase i nthe (elect ri cal ) resi s t ivity of  the Ru layers and poor surface  mo rphol ogy(e.g., th e f ormati ono f nodu les) a t low  d epo s i tiont e mp era tu res has be e n  at tribu te d to  increa sed incorporationo f C O reaction by -pr oduc t s  i nto th e  th er m all y deposited Ru la yers. Both  e f fe cts can be exp la ined by  a redu ced C O  desorp tion rate  from the  t herm a l  de compositio n of the  rutheniu m -carb o ny l pre cur sor at  s ubs trate  tempe r atu res b elow a bo ut 400 ° C.Ad ditional ly, the use of metal-ca rbonyl s, su chas ruthen ium car bonyl, ca n le ad to poor  de pos ition  ra t es du e to th eir low v apor pressure, an d t h e  t ransport is s u e s a ssoci ate d  there with . Overall, the in v entor has obse rved t hat  cu r rent  d eposition syst ems  s u f fer from  s uch a low r ate, mak in g  thedeposi tion o f suchm e ta l  films  imp rac tical. Th e p re s ent inv en ti o n rela testo  a bal l used in b a l l games such asa vol l e y bal l  an d a s oc cer bal l , an d more par ticularly t o a ba ll h aving  a fabr ic  layer  as  a  reinforci n g layer o btain ed by s ew ingtog ethera pl u r ality  ofpi ece s of wove n fa b ri ci n a  spe cific  m anne r.
Hither t o, in th e t e chnical  f iel d of the ab o v e kinds of  ba lls u s e d in ballg ames ,  t h ere i s know n a st ructure com pr ising a  ru b b er hollow  tube orb lad de r, a 
 transition_metal layers_as Cu diffusion barriers,_these studies_including_such materials_as_chromium, tantalum, molybdenum_and tungsten. Each_of these materials exhibits_low miscibility in_Cu._More recently, other materials, such as ruthenium (Ru) and rhodium (Rh), have been identified_as_potential barrier_layers_since_they are expected to behave_similarly to conventional refractory metals._However, the_use of Ru or Rh can permit the_use_of only one_barrier layer, as opposed to two layers, such as_Ta/TaN. This observation is due to_the adhesive and_barrier_properties_of these materials. For_example, one Ru layer can replace_the Ta/TaN barrier layer. Moreover, current_research is finding that the one Ru_layer can further replace the Cu_seed layer, and bulk Cu_fill can_proceed directly following Ru deposition._This observation is_due to_good adhesion between_the Cu and the Ru layers.
Conventionally,_Ru layers-can be_formed by thermally decomposing a ruthenium-containing_precursor,_such as a_ruthenium_carbonyl_precursor, in_a thermal chemical_vapor_deposition (TCVD)_process._Material properties of Ru layers that_are_deposited by thermal decomposition of metal-carbonyl precursors_(e.g., Ru3(CO)12), can deteriorate_when_the substrate temperature is_lowered to below about 400°_C. As a result, an increase_in the_(electrical) resistivity_of the Ru layers and poor surface morphology (e.g., the formation_of nodules) at low deposition temperatures_has been attributed to_increased incorporation_of_CO reaction by-products_into_the thermally_deposited Ru layers. Both effects can be_explained by_a reduced CO desorption rate from_the thermal decomposition of_the_ruthenium-carbonyl precursor at substrate temperatures below_about 400° C.
Additionally, the use of_metal-carbonyls, such as ruthenium carbonyl,_can_lead_to poor deposition rates due_to their low vapor pressure, and_the transport issues_associated therewith. Overall, the inventor has observed_that_current deposition systems suffer from such_a_low rate, making the deposition of_such_metal_films impractical. The present invention_relates to a ball used in_ball games such as a volley ball and a_soccer ball, and_more particularly to a ball_having_a_fabric layer as a reinforcing layer obtained by sewing together_a plurality_of pieces of_woven fabric in a specific manner.
Hitherto, in the technical field_of the above kinds of balls used_in ball games, there is known a structure comprising a rubber_hollow tube or bladder, a