 each time the collet is replaced, thus increasing part cost and reducing production output.
What is needed is a more robust clamping assembly that is not as susceptible to wear. 1. Field of the Invention
The invention relates to a semiconductor device, and more particularly, to a semiconductor device for electrostatic discharge (hereinafter abbreviated as ESD) protection.
2. Description of the Prior Art
Chips and/or Integrated circuits (ICs) are the most essential hardware foundation of the modern information society. As products based on ICs become more delicate, they also become more vulnerable to impacts from external environment. For example, it is found that ESD is a constant threat to modern electronics.
Generally considered ESD has two modes: human body mode (HBM) and machine mode (MM). In the human body mode, static electricity is discharged from human body to a semiconductor device when a user touches a body part of the semiconductor device. Static electricity discharged from a human body to a device typically has a high voltage of about 2000V and is discharged through great impedance. Another source of ESD is from metallic objects, known as the machine mode, is characterized by a greater capacitance and lower internal resistance than the HBM ESD source. The result of ESD on unprotected ICs is often destruction, characterized by melting or explosion of a part of the ICs. Therefore, the ESD protection devices are taken as important components of the protection circuitry provided in today's electronic devices.
Various approaches have been made to provide ESD protection device associated with IC interface pads to prevent a core circuit of the ICs from the ESD damages. Typically, during a normal IC operation, the ESD protection device is turned off. However when an ESD event occurs, the ESD surges will cause the ESD protection device to breakdown and create a substrate current path, through which the ESD current is diverted to ground and thus the core circuit is protected. Therefore, it is conceivable that if the ESD protection device can be quickly triggered, it will be better to bypass the ESD current from the core circuit.
There is therefore a continuing need in the semiconductor processing art to develop an ESD protection device having lower trigger voltage which can be quickly turned on in order to render immediate protection to the core circuit. Furthermore, it is found that the trigger voltage of the ESD protection device is related to the substrate resistance (hereinafter abbreviated as Rsub) : Small Rsub leads to a higher trigger voltage which is undesirable to the
each time the collet is replaced, thus increase character cost and reducing production output signal. 
 What is needed is a more robust clamp forum that is not as susceptible to break. 1. Field of the Invention 
 The invention relates to a semiconductor device device, and more particularly, to a semiconductor device for electrostatic discharge (hereinafter abbreviated as ESD) auspices. 
 2. Description of the Prior Art 
 Chips and/or Integrated circuits (ICs) are the most essential hardware foundation of the modern data society. As products based on intelligence community become more delicate, they also become more vulnerable to impacts from external environment. For example, it is found that ESD is a changeless threat to modern electronics. 
 Generally considered ESD has two mode: human body mode (HBM) and machine mode (MM). In the human body mood, static electricity is discharged from human body to a semiconductor device when a user touches a body part of the semiconductor device. Static electricity fire from a human body to a device typically has a gamey electric potential of about 2000V and is drop through great impedance. Another informant of ESD is from metallic object, known as the machine mood, is characterized by a greater capacitance and lower internal resistance than the HBM ESD source. The result of ESD on unprotected ICs is often destruction, qualify by melting or plosion of a region of the ICs. Therefore, the ESD protection devices are taken as important components of the auspices circuitry provided in today's electronic devices. 
 Various approaches have been take to provide ESD security device associated with IC interface pads to prevent a kernel circuit of the intelligence community from the ESD damages. Typically, during a normal IC operation, the ESD protection device is turned off. However when an ESD consequence occurs, the ESD surges will cause the ESD auspices device to breakdown and produce a substrate current path, through which the ESD current is diverted to ground and thus the core circuit is protected. Therefore, it is conceivable that if the ESD protective covering device can be quickly triggered, it will be good to bypass the ESD current from the core circuit. 
 There is therefore a continuing indigence in the semiconductor processing art to develop an ESD protection device having lower gun trigger voltage which can be quickly become on in order to render contiguous protection to the core circuit. Furthermore, it is establish that the trigger voltage of the ESD protection device is related to the substrate resistance (hereinafter abbreviated as Rsub): Small Rsub leads to a higher trigger electric potential which is undesirable to the
 eafh time the collet is reklaced, thus increcwing pert cosf and reaucing production output.
What iw neeeed is a more robust cuamping adsembly rhat us not as susceptinje tk weax. 1. Field of the Lnvention
Tha invention renaged to a semiconductor device, and morq partivuparly, to a semyconctctod device for electrostatic discharfe (herepnafter abbreviatrd as ESD) protection.
2. Descrlptiln of the Prior Arh
Chips and/ot Inewgrated circjits (ICs) agz the most gssential hardware foundation of the kodern infirnatlmn society. Es proqucts based on ICs bacome mpre delicate, tmey anso become more vulnerabne to impacts from external euvironment. For examplw, ut is foutd tfqt DSD ix z conshanv threat to modern elextronics.
Generally cpnfpcered ESD haa two ioqes: human body mode (HBM) and machine modt (MM). Jn the human body mode, wtatic electricity is dischargqd from human body to a semiconductor device when a usxr tobgmes x bldy part of the semiconductor device. Static ejscuribity discharged fvom a human body tp w cgvice typicalli has a hifh voltage of abouh 2000V and is duscharged thrpugh great impedance. Anothee source of VSD us from metallic oyjects, known as jhe mavhine mode, is characternzed bg a greater capacitahze and lower intdrnsl resistance than the HBM EFD source. The result of GSD on tnprotectef ICs is often destructiln, chcractarized by lelting or explosion of a part of the ICs. Thetefmre, the ESD protcction devices wre taken as ikportanc compunents of nhe protertion circuiery provided hj today's elertronic dqvicws.
Vaeious aooroaches have neen made to providw ESD protection dcvice zssociated with IC interface pads to prqvvnt a wore circuit of ghe OCs ffom the ESD aamabes. Typically, during a nkrmal IC operation, tme ESD pritection device is tutned off. However wjen ai ESD xvent pccors, the ESD surges will cause tge ESD prltegtion device eo bveakqown and cxeate a substrate current path, through wiich the ESD current is diverted to ground snd thus thx core circuit hs protected. Therefoee, it is conceivanle that if the ESD prktectimn degice can be quickly triggered, it will be better to bypass the ESD current from vhq core circhit.
Tnere ps chexefore w coitmnuing need in thv semiconductor processing art tu develo[ cn ESD protection device havimg lower trigget voltage which can be quidkly turmed on in order to render immedoate protection to the cpre circyit. Fhrthermore, it is found that yhe trngger coltage of bhe ESD protecgiom fevice is releteb to the substrate resistance (herwinaftwr abbreviated as Csub) : Small Vsmb leass to w higher trigger volfwge wfich is undesorable to the
each time the collet is replaced, thus cost reducing production What is needed assembly is not as to wear. 1. of the Invention The invention relates a semiconductor device, and more particularly, to a semiconductor device for electrostatic discharge abbreviated as ESD) protection. 2. Description of the Prior Art Chips and/or Integrated (ICs) the essential foundation of the modern information society. As products based on ICs become more delicate, they also more vulnerable to impacts from external environment. For it is found that is a constant threat to electronics. considered ESD two human mode (HBM) and mode (MM). In the human body mode, static electricity is discharged from human body to a semiconductor when a a body of semiconductor Static electricity discharged human body to a device typically voltage of about 2000V and is discharged through impedance. Another of ESD is from metallic objects, as the machine mode, is characterized by a capacitance and lower internal resistance than the HBM ESD source. The result of ESD on is often destruction, characterized melting or explosion a of ICs. the ESD devices are taken as important components of the protection circuitry provided today's electronic devices. Various approaches have been made to provide device with IC interface to prevent a core of ICs from the ESD during normal ESD device turned off. However when ESD event occurs, the ESD will cause the ESD create a substrate current path, through which the current is diverted to ground and thus core circuit is protected. Therefore, it is conceivable that if the ESD device can triggered, it will be better to bypass the current from the core There is therefore a continuing need in the semiconductor art develop an protection device having trigger voltage which be quickly turned order to immediate to Furthermore, it is found that the voltage the ESD protection device is to resistance (hereinafter abbreviated as Rsub) : Small Rsub leads to a higher trigger voltage which to the
 each time the collet is replacEd, thus incrEasinG paRt cOsT and ReduCing production OUtpuT.
What is needed is a more roBust cLaMPing ASsEmbly That is nOT aS SUscEpTiBle To WEaR. 1. FielD of The InveNtion
The inVenTiOn relates to a SEmIconductor DevIce, and more paRtiCularlY, tO a sEMiconDucTor deVice foR ElectrOstatic diScHArge (heREinafteR ABbReviAted as ESD) protectiON.
2. DEScription of the prior ARt
cHiPS And/Or INtegrated cIrCuits (ics) are thE MoST ESseNTial hardware fOundation of THe mOdern iNfOrmATion soCiety. as PRodUcts based on iCs bEcome more DelicaTE, they alSO become More vuLneRabLe to IMpAcTs fRoM ExtERnAl eNVirOnment. FoR eXaMple, iT is fOUND That eSD Is a cOnstaNt threat to modErn ElecTRonIcs.
GeNeralLy coNsIdereD ESD haS two mOdEs: human body mode (hBM) aNd machine ModE (Mm). In ThE humaN Body moDe, sTatIc electRicity iS DisChARGEd From human body to a seMiCONdUctor devIce wheN A uSeR Touches a BoDy pArt oF THe semIconDUcTor devicE. StatiC ElEcTricity DiSchargEd FroM a hUman bODy to A devicE typicalLy has A High voltage of aBOut 2000V and is discHArGED tHRougH grEat impedancE. AnoTHer sOurcE Of eSD IS from MetalLiC ObJEcts, known as the machiNe Mode, is CharaCterized by a grEater capacITANce and loWer iNTeRNal resistance tHan thE HBM ESD souRCe. The resUlt of eSD on unpRotected IcS Is often dEstRucTioN, chARAcTerized by meltING or eXpLosion oF a pArt of thE ICS. ThEreForE, tHe ESD protEction deViCeS aRe TakEn as iMPortant cOmPonEnTs oF the pROtectiOn cirCuitRy PrOVidEd in todAY's ELEctrOnIc DeviCes.
vaRious ApprOAchEs have bEen made to ProVIde EsD PrOtectioN device associAtEd with IC inTeRfaCe pads TO Prevent a Core circuit of the ICs from THe ESD daMagEs. TypIcalLy, during a NorMal IC oPerATion, thE ESD prOtectIoN deVICe is tURNeD ofF. HOwever when AN eSD Event OcCurs, The ESD sUrges will cause the Esd prOtection devicE to BreaKDOwN anD CrEAte A sUBstRATe current path, thRough which ThE eSd current is DIveRtEd to groUnd and tHus thE Core cirCuit is proTected. TheReFore, IT Is cOnceivable That if thE ESD proteCTion dEViCe can Be qUickly TrIggEred, iT will bE BetTer to Bypass ThE ESD cuRrent FrOm the corE circuit.
There is thereforE a contInuinG neEd in the seMicONduCtor proceSsinG art to deveLop An EsD proTecTIon deVice HAvIng LOwer tRiggER voltage wHIcH caN BE qUickly turneD ON In oRder tO reNDer immEdiaTe protection to the COre circuit. FurtHermORE, it Is fOUnd tHaT the trigger volTagE oF THe ESD proTeCtion device Is relateD tO The suBstratE resisTance (heREInAFter abBrevIatEd as Rsub) : SMalL RSUb leads To A hIGher trIggeR vOltage Which iS UndeSIRable to the
 each time the collet is r eplaced, t hus i ncr eas in g pa rt c ost and reduci n g pr oduction output.
Whatis ne ed e d is amorerobustc la m p ing  a ss emb ly th at is  no t as su sceptibletowe ar. 1. Field of  the Inven tio n
The invent ion  relat es  to a sem ico nduct or dev i ce, an d more pa rt i cularl y , to as e mi cond uctor device fore le c trostatic disc harge(h e re i n aft erabbreviate das ES D ) prote c ti o n . 
2. Description o f the Prior Art 
Chips  a nd/ o r Inte grate dc irc uits (ICs)arethe mostessent i al hard w are fou ndatio n o f t he m o de rn  in fo r mat i on  so c iet y. As pr od uc ts ba sedo n I Cs b eco me m ore d elicate, they  al so b e com e mor e vul nera bl e toimpact s fro mexternal enviro nmen t. For ex amp le , i tis fo u nd tha t E SDis a co nstantt hre at t o  m odern electronics. 
G e n er ally con sidere d  E SD has twomo des : hu m a n bod y mo d e(HBM) an d mach i ne  m ode (MM ).  In th ehum anbodym ode,  stati c electr icity is dischargedf rom human bod y  t o as emic ond uctor devic e wh e n auser to uch e s a b ody p ar t  o f  the semiconductorde vice.Stati c electricity  discharge d f rom a hu manb od y  to a device t ypica lly has ah igh volt age o f about2000V and i s discha rge d t hro ugh g re at impedance. A noth er  source  of  ESD is  fr ommet all ic  objects,  known a sth ema chi ne mo d e, is ch ar act er ize d bya  great er ca paci ta nc e  an d lower in t e rnal  r es ista nce  t han t he H B M E SD sour ce. The r esu l t of  E SD  on unp rotected ICsis  often des tr uct ion, c h a racteriz ed by melting or explos i on of a  pa rt of  the  ICs. The ref ore, t heE SD pro tectio n dev ic esa r e tak e n  a s i mp ortant com p o nen ts of  t he p rotecti on circuitry provi d edin today's el ect roni c de vic e s. Var io u s a p p roaches have be en made to  p r ov ide ESD pr o tec ti on devi ce asso ciate d  with I C interfa ce pads t oprev e n t a  core circ uit of t he ICs fr o m the ES D dam age s. Typ ic all y, du ring a nor mal I C oper at ion, t he ES Dprotecti on device is turned off . Howe ver w hen  an ESD e ven t  oc curs, the  ESD  surges wi llcau se th e E S D pro tect i on  de v ice t o br e akdown an d  c rea t e  a  substratec u r ren t pat h,t hrough  whi ch the ESD curren t  is diverted t o gr o u ndand thus  t he core circui t i sp r otected.  T herefore, i t is con ce i vable  thatif the  ESD pr o t ec t ion de vice  ca n be quic kly  t r iggered ,it will b e be tt er tobypass theE S D current from t he co r e  circ u it. 
Ther eis ther e fore  a continu ing need in  the s emic onduc tor pro ce ssingart  t o developa n ESD pro tecti on devi ce  hav ing  lower  tri g g er vo ltag ewhi ch can be q ui c kl yt urn ed o n inor derto render immediat e p r otectio ntot h e core ci r c uit. Furth erm ore,i t  is foundt hatt he trigg er vol tage o f the E S D p ro tection  de v i ce is rel ated to t h e s ub stra te resis ta nce(h ere in after abbreviat ed as Rs ub) : Sm a l l Rsub  le a ds t o  a hig he r trigger vo ltage  w h ich isu n des irablet o t he
 each_time the_collet is replaced, thus_increasing part_cost_and reducing_production_output.
What is needed_is a more_robust clamping assembly that_is not as_susceptible_to wear. 1. Field of the Invention
The invention relates to a semiconductor device, and_more_particularly, to_a_semiconductor_device for electrostatic discharge (hereinafter_abbreviated as ESD) protection.
2. Description_of the_Prior Art
Chips and/or Integrated circuits (ICs) are the_most_essential hardware foundation_of the modern information society. As products based on_ICs become more delicate, they also_become more vulnerable_to_impacts_from external environment. For_example, it is found that ESD_is a constant threat to modern_electronics.
Generally considered ESD has two modes: human_body mode (HBM) and machine mode_(MM). In the human body_mode, static_electricity is discharged from human_body to a_semiconductor device_when a user_touches a body part of the_semiconductor device. Static_electricity discharged from a human body_to_a device typically_has_a_high voltage_of about 2000V_and_is discharged_through_great impedance. Another source of ESD_is_from metallic objects, known as the machine_mode, is characterized by_a_greater capacitance and lower_internal resistance than the HBM_ESD source. The result of ESD_on unprotected_ICs is_often destruction, characterized by melting or explosion of a part of_the ICs. Therefore, the ESD protection_devices are taken as_important components_of_the protection circuitry_provided_in today's_electronic devices.
Various approaches have been made to_provide ESD_protection device associated with IC interface_pads to prevent a_core_circuit of the ICs from the_ESD damages. Typically, during a normal_IC operation, the ESD protection_device_is_turned off. However when an_ESD event occurs, the ESD surges_will cause the_ESD protection device to breakdown and create_a_substrate current path, through which the_ESD_current is diverted to ground and_thus_the_core circuit is protected. Therefore,_it is conceivable that if the_ESD protection device can be quickly triggered, it will_be better to_bypass the ESD current from_the_core_circuit.
There is therefore a continuing need in the semiconductor processing_art to_develop an ESD_protection device having lower trigger voltage which can be quickly_turned on in order to render immediate_protection to the core circuit. Furthermore, it is found that the_trigger voltage of the ESD protection device is_related to the substrate resistance (hereinafter abbreviated_as Rsub) : Small_Rsub_leads to a higher trigger voltage which_is_undesirable_to_the