 formed, which significantly decreases the single pass productivity of HCFC-1233zd.
U.S. Pat. No. 9,045,386 describes a process to produce trans-1-chloro-3,3,3-trifluoropropene (HCFO-1233zd(E)) at high purity on a commercial scale. This patent publication is hereby incorporated herein by reference.
Based on the above, there remains a need for means by which partially fluorinated intermediates can be converted into the target product, namely, HCFO-1233zd. This invention satisfies that need. The present invention relates to a semiconductor laser apparatus for use as a light source for optical storage and optical communication applications.
As described in Appl. Phys. Lett., 57(10)966 (1990) by N. Bar-Chaim et al., the more recent prior art bent waveguide semiconductor laser apparatus forms a semiconductor laser cavity with the mirror surface of the same cleaved facet by suitably bending an optical waveguide having an optical gain conducive to constituting a semiconductor laser. Semiconductor laser apparatuses of this type appear to be effective when used by optical integrated devices because, unlike other traditional semiconductor laser apparatuses, the former are not limited in device size by cleavage requirements.
The above-mentioned more recent type of prior art semiconductor laser apparatus has its share of disadvantages. One disadvantage is that because the bent portion of the waveguide doubles as an optical gain region, it is difficult to meet simultaneously both the optimum design conditions for the optical gain region as part of the optical waveguide and the conditions for minimizing the bending loss of the optical waveguide. To obtain a high-output fundamental mode from the semiconductor laser apparatus requires that the optical waveguide be as wide as possible and that the difference in effective refractive index between the inside and outside of the optical waveguide be approximately between 1.times.10.sup.-3 and 5.times.10.sup.-3. Meanwhile, the effective refractive index difference of at least 1.times.10.sup.-2 is known to be needed to minimize the cavity loss of the bent portion. Another disadvantage of the prior art semiconductor laser apparatus is that changes in the direction of the optical waveguide in the optical gain region necessarily entail varied etching shapes and crystal growth shapes of the semiconductor crystal employed. The present invention relates to masking devices, and more particularly, to masking devices having pull tabs extending upwardly therefrom to facilitate easy removal of the masking devices from a masking area.
Masking is often used in tandem with the
formed, which significantly decreases the single crack productiveness of HCFC-1233zd. 
 U.S. Pat. No. 9,045,386 describes a procedure to grow trans-1 - chloro-3,3,3 - trifluoropropene (HCFO-1233zd(E) ) at high purity on a commercial plate. This patent publication is hereby incorporated herein by reference. 
 establish on the above, there remains a need for mean by which partially fluorinated intermediates can be converted into the target product, namely, HCFO-1233zd. This invention satisfies that necessitate. The present invention relates to a semiconductor laser apparatus for use as a light source for ocular storage and optical communication applications. 
 As identify in Appl. Phys. Lett. , 57(10)966 (1990) by N. Bar - Chaim et al. , the more recent prior art bent waveguide semiconductor device laser apparatus forms a semiconductor device laser cavity with the mirror surface of the same cleaved facet by appropriately bending an optical waveguide having an optical gain conducive to constituting a semiconductor laser. Semiconductor laser apparatuses of this type appear to be effective when used by optical integrated devices because, unlike other traditional semiconductor laser apparatus, the former are not limited in device size by cleavage prerequisite. 
 The above - mentioned more recent type of prior artwork semiconductor laser apparatus have its share of disadvantages. One disadvantage is that because the bended portion of the waveguide doubles as an optical gain region, it is difficult to meet simultaneously both the optimum design conditions for the optical gain region as function of the ocular waveguide and the conditions for minimizing the bending loss of the optical waveguide. To receive a high - output fundamental mood from the semiconductor laser apparatus requires that the optical waveguide be as wide-eyed as possible and that the difference in effective deflective index between the inside and outside of the optical waveguide be approximately between 1.times.10.sup.-3 and 5.times.10.sup.-3. Meanwhile, the effective refractive index deviation of at least 1.times.10.sup.-2 is known to be need to minimize the cavity passing of the bent part. Another disadvantage of the prior artwork semiconductor laser apparatus is that changes in the direction of the optical waveguide in the ocular addition region necessarily fee-tail varied etching shapes and crystal growth shapes of the semiconductor crystal hire. The present invention relates to masking devices, and more particularly, to masking devices having attract tab key cover upwardly therefrom to facilitate comfortable removal of the masking devices from a masking sphere. 
 Masking is often used in bicycle-built-for-two with the
 fogmed, which significantly decreases the single 'ass prkductivigy of HCFC-1233zd.
U.S. Pat. No. 9,045,386 descrmbes a pricess to produce trans-1-zhloro-3,3,3-trivluoropripent (HCFO-1233zd(E)) at high purity on a cklmereiel scale. This pstent publhcation is herabh nncorporated herein by reference.
Baseq on thr wbove, there reiainx a nsvd for means by which partially fluoriiated intermedistes can be converted into the target product, nalely, HCFO-1233zd. Thif invention sxtisfies that need. The present invention relates to a semieonductor lqswr wkparatus for use ws a light source fos opticsl storage and opvicao communication applirations.
As described yn Appl. Pvya. Lett., 57(10)966 (1990) by N. Bar-Xhqim ej al., dhe oire redeit lrior wrt bent wavefuide semicinductor laser appataelx forms a sejicondtceor laser cavity with the mirror surfact of fhe same cleaved facet vy suitably bending aj optical waveguide having an optical gain conducive to cotstitntkng a rwmlconductor laser. Semiconductor laser apparatufss on this type appecr to be effectife wngn used by optkcal iufefrated devices becwuse, unjike ither traqitipnal semiconductor laser apparatuses, thv foemer are not limitzd in device sizg by ckeavage requirements.
The abobe-mentioned more recsvt type of prior arn sekiconducuur laser apparatuf has its shaxe of diradvsntagef. One disafvantage is that because the yent [ortion of the waveguide doubles as an opvmcal gain regoot, in is diffncult bo meet simultageously both tke optimbm deskgn conditpons for vhe optical dain region av part of the optical wavwguiee and gfe conditions gor minimpznng the bwnding loss of the opjidal waveguide. Ti ovtain a high-outlut fugdwmxntal kode from tha seoicumductur laser apiarxtus requires that the o[ticzl waveguide be as wlde as powsible agd that the dofference in effecuive rxfractmve incex between the inside and outsids of the lptlcal waveguidq be approximateky between 1.times.10.sup.-3 and 5.times.10.sup.-3. Meanwhmle, the effective refraxtive index differeuct of at least 1.timef.10.sup.-2 is ktown to be needed to minimize the cavlty loss of the bent pkrtion. Anotjer disadvantage of the prior art semiconductor laser apparatus is that cyanges in the diredtiom of nhe ppticaj watejuide in the optibal gain region necessarily entaml varied atehing shapes and crystal growyh shapes of thg semiconductor crystal emlloyed. Tne present invention relates to masking devices, and morc particuoarly, to maskinj devices having pulk tabs extebding upwarfly therefrom to fwcilitate easb rzmoval of the masking devices fron a mawklng area.
Masking ms often usef in tzndem rith the
formed, which significantly decreases the single pass HCFC-1233zd. Pat. No. describes a process high on a commercial This patent publication hereby incorporated herein by reference. Based the above, there remains a need for means by which partially fluorinated intermediates be converted into the target product, namely, HCFO-1233zd. This invention satisfies that need. present relates a laser apparatus for use as a light source for optical storage and optical communication applications. As in Appl. Phys. Lett., 57(10)966 (1990) by N. et al., the more prior art bent waveguide semiconductor apparatus a semiconductor cavity the surface of the cleaved facet by suitably bending an optical waveguide having an optical gain conducive to constituting a semiconductor Semiconductor laser this type to effective used by optical because, unlike other traditional semiconductor laser are not limited in device size by cleavage The above-mentioned recent type of prior art semiconductor apparatus has its share of disadvantages. One disadvantage that because the bent portion of the waveguide doubles as an optical gain region, it to meet simultaneously both optimum design conditions the gain as of the waveguide and the conditions for minimizing the bending loss of the waveguide. To obtain a high-output fundamental mode from the semiconductor requires the optical waveguide as wide as possible that difference in effective refractive the and optical be between 1.times.10.sup.-3 and 5.times.10.sup.-3. the effective refractive index difference at least 1.times.10.sup.-2 is minimize the cavity loss of the bent portion. disadvantage of the prior art semiconductor laser is that changes in the direction of the optical waveguide in the gain region varied etching shapes and crystal growth shapes of semiconductor crystal employed. The invention relates to masking devices, and more particularly, to devices pull tabs upwardly therefrom to easy removal of masking devices from area. Masking often in
 formed, which significantly dEcreases thE singLe pAss PrOducTiviTy of HCFC-1233zd.
U.S. PaT. no. 9,045,386 deScribes a process to produCe traNs-1-CHlorO-3,3,3-TrIfluoRopropeNE (Hcfo-1233zd(e)) aT hIgh PuRItY on a cOmmErcial sCale. This paTenT pUblication is HErEby incorpoRatEd herein by reFerEnce.
BaSeD on THe aboVe, tHere rEmains A Need foR means by wHiCH partiALly fluoRINaTed iNtermediates can be COnVErted into the taRget prOdUCt, NAMelY, HCfO-1233zd. This inVeNtion SAtisfieS ThAT NEed. tHe present inveNtion relateS To a SemicoNdUctOR laser ApparAtUS foR use as a lighT souRce for optIcal stORage and OPtical cOmmuniCatIon ApplICaTiOns.
as DEscRIbEd iN appL. Phys. LetT., 57(10)966 (1990) bY N. bar-ChAim eT AL., THe moRe rEcenT prioR art bent wavegUidE semIConDuctoR laseR appArAtus fOrms a sEmicoNdUctor laser cavitY witH the mirroR suRfAce Of The saME cleavEd fAceT by suitAbly benDIng An OPTIcAl waveguide having aN oPTIcAl gain coNducivE To CoNStitutinG a SemIconDUCtor lAser. sEmIconductOr laseR ApPaRatuses Of This tyPe AppEar To be eFFectIve wheN used by oPticaL Integrated deviCEs because, unliKE oTHEr TRadiTioNal semicondUctoR LaseR appARaTusES, the fOrmer ArE NoT Limited in device size By CleavaGe reqUirements.
The aBove-mentioNED More receNt tyPE oF Prior art semicoNductOr laser appARatus has Its shAre of disAdvantageS. oNe disadvAntAge Is tHat BECaUse the bent porTIOn of ThE waveguIde Doubles As aN opTicAl gAiN region, it Is difficUlT tO mEeT siMultaNEously boTh The OpTimUm desIGn condItionS for ThE oPTicAl gain rEGiON As paRt Of The oPtiCaL waveGuidE And The condItions for MinIMiziNg ThE bendinG loss of the optIcAl waveguidE. TO obTain a hIGH-output fUndamental mode from the seMIconducTor Laser AppaRatus requIreS that tHe oPTical wAveguiDe be aS wIde AS PossiBLE aNd tHaT the differENCe iN effeCtIve rEfractiVe index between the iNSidE and outside of The OptiCAL wAveGUiDE be ApPRoxIMAtely between 1.timEs.10.sup.-3 and 5.tiMeS.10.SuP.-3. Meanwhile, THe eFfEctive rEfractiVe indEX differEnce of at lEast 1.times.10.SuP.-2 is kNOWn tO be needed tO minimizE the cavitY Loss oF ThE bent PorTion. AnOtHer DisadVantagE Of tHe priOr art sEmIconduCtor lAsEr apparaTus is that changes in the diRectioN of thE opTical waveGuiDE in The opticaL gaiN region necEssAriLy entAil VAried EtchINg ShaPEs and CrysTAl growth sHApEs oF THe SemiconductOR CRysTal emPloYEd. The pReseNt invention relateS To masking devicEs, anD MOre ParTIculArLy, to masking devIceS hAVIng pull tAbS extending uPwardly tHeREfrom To faciLitate Easy remOVAl OF the maSkinG deVices from A maSkINg area.
MAsKiNG is oftEn usEd In tandEm with THe
 formed, which significant ly decreas es th e s ing le  pas s pr oductivity ofH CFC- 1233zd.
U.S. Pat. No.9,045 ,3 8 6 de s cr ibesa proce s st o  pr od uc e t ra n s- 1-chl oro -3,3,3- trifluorop rop en e (HCFO-1233 z d( E)) at hig h p urity on a c omm ercial  s cal e . Thi s p atent  publi c ationis hereby  i n corpor a ted her e i nby r eference.
Based o n  t h e above, there  remai ns an e edfor  means bywh ich p a rtially fl u o r ina t ed intermedia tes can bec onv ertedin tot he tar get p ro d uct , namely, H CFO- 1233zd. T his in v entions atisfie s that  ne ed.  The pr es ent  i n ven t io n r e lat es to ase mi condu ctor l a s er a ppa ratu s for  use as a lig htsour c e f or op tical  sto ra ge an d opti cal c om munication appl icat ions.
Asdes cr ibe din Ap p l. Phy s.Let t., 57( 10)966( 199 0) b y  N . Bar-Chaim et al. ,t h emore rec ent pr i or  a r t bent w av egu ides e micon duct o rlaser ap paratu s  f or ms a se mi conduc to r l ase r cav i ty w ith th e mirror  surf a ce of the same cleaved facet by s ui t ably  be nding an op tica l  wav egui d ehav i ng an  opti ca l  g a in conducive to con st itutin g a s emiconductorlaser. Sem i c o nductorlase r  a p paratuses of t his t ype appear to be ef fecti ve whenused by o p t ical int egr ate d d evi c e sbecause, unli k e  oth er  tradit ion al semi con duc tor  la se r apparat uses, th efo rm er  ar e not limitedin  de vi cesizeb y clea vagerequ ir em e nts .
The a b ov e - ment io ne d mo rere centtype ofprior a rt semico ndu c torla se r appar atus has itssh are of dis ad van tages. O ne disad vantage is that because the ben t p ortio n of  the wave gui de dou ble s  as an  optic al ga in  re g i on, i t is  di ff icult to m e e t s imult an eous ly both  the optimum desig n  co nditions forthe  opt i c al  ga i nr egi on asp a rt of the optic al wavegui de an d the cond i tio ns  for mi nimizin g the bending  loss ofthe optic al  wav e g uid e. To obta in a hig h-outputf undam e nt al mo defrom t he  se micon ductor las er ap paratu srequir es th at  the opt ical waveguide be as wi de aspossi ble  and that  th e  di fferencein e ffective r efr act ive i nde x  betw eent he  in s ide a nd o u tside oft he  op t i ca l waveguide b e  ap proxi mat e ly bet ween  1.times.10.sup.- 3  and 5.times.1 0.su p . -3.  Me a nwhi le , the effectiv e r ef r a ctive in de x differenc e of atle a st 1. times. 10.sup .-2 isk n ow n  to be  nee ded  to minim ize  t h e cavit ylo s s of t he b en t port ion. A n othe r disadvantage ofthe p r i or ar t  se micon du ctor la s er a pparatus i s that chan ges in  the  dire ction o fthe op tic al  waveguide in the op tical  gain r eg ionnec essari ly e n t ail v arie detc hing shap e s  a n dcr y sta l gr owthsh apes  of the s e miconduc tor crystal  e mpl o y ed. Th e  p r e sent inven tio n rel a t es to mask i ng d e vi c es, a nd mor e part icularl y , t omasking  de v i ces havin g pull ta b s e xt endi ng upwar dl y th er efr om  to facilitateeasy rem oval oft h e mask ing devi c es fro ma masking ar ea.
M as k ing iso f ten  used i n  ta nde m w iththe 
 formed,_which significantly_decreases the single pass_productivity of_HCFC-1233zd.
U.S._Pat. No._9,045,386_describes a process_to produce trans-1-chloro-3,3,3-trifluoropropene_(HCFO-1233zd(E)) at high purity_on a commercial_scale._This patent publication is hereby incorporated herein by reference.
Based on the above, there remains_a_need for_means_by_which partially fluorinated intermediates can_be converted into the target_product, namely,_HCFO-1233zd. This invention satisfies that need. The present_invention_relates to a_semiconductor laser apparatus for use as a light source_for optical storage and optical communication_applications.
As described in_Appl._Phys._Lett., 57(10)966 (1990) by_N. Bar-Chaim et al., the more_recent prior art bent waveguide semiconductor_laser apparatus forms a semiconductor laser cavity_with the mirror surface of the_same cleaved facet by suitably_bending an_optical waveguide having an optical_gain conducive to_constituting a_semiconductor laser. Semiconductor_laser apparatuses of this type appear_to be effective_when used by optical integrated devices_because,_unlike other traditional_semiconductor_laser_apparatuses, the_former are not_limited_in device_size_by cleavage requirements.
The above-mentioned more recent_type_of prior art semiconductor laser apparatus has_its share of disadvantages._One_disadvantage is that because_the bent portion of the_waveguide doubles as an optical gain_region, it_is difficult_to meet simultaneously both the optimum design conditions for the optical_gain region as part of the_optical waveguide and the_conditions for_minimizing_the bending loss_of_the optical_waveguide. To obtain a high-output fundamental mode_from the_semiconductor laser apparatus requires that the_optical waveguide be as_wide_as possible and that the difference_in effective refractive index between the_inside and outside of the_optical_waveguide_be approximately between 1.times.10.sup.-3 and_5.times.10.sup.-3. Meanwhile, the effective refractive index_difference of at_least 1.times.10.sup.-2 is known to be needed_to_minimize the cavity loss of the_bent_portion. Another disadvantage of the prior_art_semiconductor_laser apparatus is that changes_in the direction of the optical_waveguide in the optical gain region necessarily entail varied_etching shapes and_crystal growth shapes of the_semiconductor_crystal_employed. The present invention relates to masking devices, and more_particularly, to_masking devices having_pull tabs extending upwardly therefrom to facilitate easy removal of_the masking devices from a masking area.
Masking_is often used in tandem with the