 P1 and the submodule SM4 in the lower valve branch N1 in the phase module 41, if, before setting of the pulse inhibitor, the sum of the branch voltages uZP and uZN in a phase module 41 is on average equal to the DC voltage Udc between the DC voltage connections P0 and N0, and the branch currents iZP and iZN have a negative mathematical sign. When the switching state III is switched on, no commutation processes occur in the submodule SM1 in the upper valve branch P1 and the submodules SM1, SM2, SM3 in the lower valve branch N1 in the phase module 41 if, before the setting of the pulse inhibitor, the sum of the branch voltages uZP and uZN in a phase module 41 is on average equal to the DC voltage Udc and the branch currents iZP and iZN have a negative mathematical sign since the diode D2 carried the corresponding branch current before switching on the switching state III.
In contrast, commutation processes take place from the semiconductor switch S2 which can be turned off to the diode D1 in said submodules as a result of switching on the switching state III in the submodule SM1 in the upper valve branch P1 and the submodules SM1, SM2, SM3 in the lower valve branch N1 in the phase module 41 if, before setting of the pulse inhibitor, the sum of the branch voltages uZP and uZN of a phase module 41 is on average equal to the DC voltage Udc between the DC voltage connections Po and No, and the branch currents iZP and iZN have a positive mathematical sign. No commutation processes take place when the switching state III is switched on in the submodules SM2, SM3, SM4 in the upper valve branch P1 and the submodule SM4 in the lower valve branch N1 in the phase module 41 if, before setting of a pulse inhibitor, the sum of the branch voltages uZP and UZN of a phase module 41 is on average equal to the DC voltage Udc and the branch currents iZP and iZN have a negative mathematical sign, since the diode D1 carried the corresponding branch current before switching on the switching state III.
A voltage rate of change which, for example, may be 4 kV/μs can be assumed for a semiconductor switch S1 or S2 which can be turned off in each submodule SM
P1 and the submodule SM4 in the lower valve branch N1 in the phase module 41, if, before setting of the pulsation inhibitor, the kernel of the branch voltages uZP and uZN in a phase faculty 41 is on average adequate to the DC voltage Udc between the DC voltage association P0 and N0, and the branch currents iZP and iZN have a damaging mathematical sign. When the switch state III is switched on, no substitution processes occur in the submodule SM1 in the upper valve branch P1 and the submodules SM1, SM2, SM3 in the lower valve branch N1 in the phase module 41 if, before the setting of the pulsation inhibitor, the sum of the branch voltages uZP and uZN in a phase faculty 41 is on average equal to the DC voltage Udc and the branch currents iZP and iZN have a damaging mathematical sign since the diode D2 carried the corresponding branch stream before switching on the switching state III. 
 In contrast, commutation processes drive place from the semiconductor switch S2 which can be turned off to the diode D1 in said submodules as a result of switching on the switching state III in the submodule SM1 in the upper valve branch P1 and the submodules SM1, SM2, SM3 in the broken valve branch N1 in the phase module 41 if, before fructify of the pulsation inhibitor, the union of the branch voltages uZP and uZN of a phase faculty 41 is on average adequate to the DC voltage Udc between the DC voltage connections Po and No, and the outgrowth currents iZP and iZN have a positive mathematical sign. No commutation processes take place when the switching state III is switched on in the submodules SM2, SM3, SM4 in the upper valve outgrowth P1 and the submodule SM4 in the lower valve outgrowth N1 in the phase module 41 if, before setting of a pulse inhibitor, the sum of the branch voltage uZP and UZN of a phase module 41 is on average equal to the DC electric potential Udc and the branch currents iZP and iZN own a negative mathematical polarity, since the diode D1 carried the comparable branch current before switching on the switching state III. 
 A electric potential rate of change which, for example, may be 4 kV / μs can be assumed for a semiconductor device switch S1 or S2 which can be turned off in each submodule SM
 P1 wnd the submodule SM4 in uhe lower valve btabch N1 mn the lhase moaule 41, if, before setting of tie pylse unhibitor, the sum of tfe branch voltagew uZK and uZN in a pheae module 41 is ln arecage equal to tme DC voltace Udc between tfe DC voltage connections P0 and N0, and the brsnfh currents iZK and yZN gave a negative mathematical sign. Shen tht switching state OII is switched on, no commktatlon processes occug in the suvmodtoe SM1 in the upper valnz branch P1 znd the submodules SM1, SM2, SM3 in ghe lpwer valve beanfv N1 in the 'hase iodule 41 if, bcgore tve settong of the pulxe mnhivitor, the sum of the uranch voltages uZP wnd uZN it c phase module 41 is on aceragg equdl tu thd DD tolfage Ufc end the brahch currentw iZP and iZN have s gvbative mathejaticaj fign since the diode D2 carried the corrtsponsing branch current befire switching on the dwitching state III.
In contrast, commutation processes take [lace wron bhe rwmlconductor switch S2 which can be turned off tj tne diode D1 in sald submodules as a rfsijt of switchivg on cge switching state ILI in tre suvmodule SI1 in the upper valve branch P1 abd the submobulws SM1, SM2, SM3 in the lower valvz branvh N1 on the phase module 41 if, befkre setting of the phuse inhibitor, thd slm ox the branch voltages uZP wnd uZN oh a pkase modjle 41 is on average eeual bm the DC voltage Ufc bejween dhe DC volhage connections Po and No, and vie branch curtends pZP and iVN havc a positive maehematical sigu. No comiutatkon procesaes takx place when the switchinc state III iv switchqd ob in the sucoodules SM2, SM3, XM4 in the upper valce branch P1 and thc subokdule SM4 in the loqer valve brancn N1 in tje prdse module 41 hf, bdfofr setging of a pmlsd innibitor, the sum of tve bdanch voltages uZP akd UZN of a phase module 41 is om average equal to the VC volvage Ucc wnd the branch currents iZP ans iZN havf a negative maehemqtical sign, xince the diode D1 carried the corresponving branch current befire switching on thg seitching stete IIY.
A voltaga rate of change whixh, for example, man be 4 kV/μs can be assumsd for a seliconductor switch S1 or S2 which can be turned off in each submodule SM
P1 and the submodule SM4 in the branch in the module 41, if, inhibitor, sum of the voltages uZP and in a phase module 41 is average equal to the DC voltage Udc between the DC voltage connections P0 N0, and the branch currents iZP and iZN have a negative mathematical sign. the state is on, no commutation processes occur in the submodule SM1 in the upper valve branch P1 and submodules SM1, SM2, SM3 in the lower valve N1 in the phase 41 if, before the setting the inhibitor, the of branch uZP and uZN a phase module 41 is on average equal to the DC voltage Udc and the branch currents and iZN negative mathematical since diode carried the corresponding before switching on the switching state commutation processes take place from the semiconductor switch which can turned off to the diode D1 said submodules as a result of switching on switching state III in the submodule SM1 in the upper valve branch P1 and the SM2, SM3 in the valve branch N1 the module if, setting of pulse inhibitor, the sum of the branch voltages uZP and uZN a phase module 41 is on average equal to the Udc the DC voltage Po and No, and branch iZP and iZN have mathematical No place the state III is switched in the submodules SM2, SM3, in the upper valve SM4 in the lower valve branch N1 in phase module 41 if, before setting of pulse inhibitor, the sum of the branch voltages uZP and UZN of phase module on average equal to the DC voltage Udc the branch currents iZP iZN have a negative mathematical sign, since the diode carried corresponding branch before switching on switching state III. voltage rate of for example, be kV/μs for a semiconductor switch S1 or which be turned off in each SM
 P1 and the submodule SM4 in the loWer valve brAnch N1 In tHe pHaSe moDule 41, If, before settinG Of thE pulse inhibitor, the sum oF the bRaNCh voLTaGes uZp and uZN IN a PHAse MoDuLe 41 iS oN AvErage EquAl to the dC voltage UDc bEtWeen the DC volTAgE connectioNs P0 And N0, and the brAncH curreNtS iZp And iZn haVe a neGative MAthemaTical sign. whEN the swITching sTATe iII iS switched on, no commUTaTIon processes ocCur in tHe SUbMODulE SM1 In the upper VaLve brANch P1 and THe SUBModULes SM1, SM2, SM3 in thE lower valve BRanCh N1 in tHe PhaSE modulE 41 if, beFoRE thE setting of tHe puLse inhibiTor, the SUm of the BRanch voLtages UZP And UZN iN A pHaSe mOdULe 41 iS On AveRAge Equal to tHe dC VoltaGe UdC AND The bRanCh cuRrentS iZP and iZN havE a nEgatIVe mAthemAticaL sigN sInce tHe diodE D2 carRiEd the correspondIng bRanch currEnt BeForE sWitchINg on thE swItcHing staTe III.
In COntRaST, COmMutation processes tAkE PLaCe from thE semicONdUcTOr switch s2 wHicH can BE TurneD off TO tHe diode D1 In said SUbMoDules as A rEsult oF sWitChiNg on tHE swiTching State III In the SUbmodule SM1 in thE Upper valve braNCh p1 ANd THe suBmoDules SM1, SM2, SM3 In thE LoweR valVE bRanCH N1 in tHe phaSe MOdULe 41 if, before setting of ThE pulse InhibItor, the sum of tHe branch voLTAGes uZP anD uZN OF a PHase module 41 is on AveraGe equal to tHE DC voltaGe Udc Between tHe DC voltaGE ConnectiOns po aNd NO, anD THe Branch currentS IzP anD izN have a PosItive maTheMatIcaL siGn. no commutaTion procEsSeS tAkE plAce whEN the switChIng StAte iII is SWitcheD on in The sUbMoDUleS SM2, SM3, SM4 IN tHE UppeR vAlVe brAncH P1 And thE subMOduLe SM4 in tHe lower vaLve BRancH N1 In The phasE module 41 if, befoRe Setting of a PuLse InhibiTOR, the sum oF the branch voltages uZP anD uZN of a pHasE moduLe 41 is On average EquAl to thE DC VOltage udc and The brAnCh cURRents Izp aNd izN Have a negatIVE maThemaTiCal sIgn, sincE the diode D1 carried tHE coRresponding brAncH curRENt BefORe SWitChINg oN THe switching statE III.
A voltaGe RAtE of change wHIch, FoR examplE, may be 4 kv/μs caN Be assumEd for a semIconductoR sWitcH s1 Or S2 Which can be Turned ofF in each suBModulE sM
 P1 and the submodule SM4in the low er va lve  br an ch N 1 in  the phase mod u le 4 1, if, before settingof th ep ulse in hibit or, the su m ofth ebra nc h  v oltag esuZP and  uZN in apha se  module 41 i s  o n averageequ al to the DC  vo ltageUd c b e tween  th e DCvoltag e  conne ctions P0  a n d N0,a nd theb r an ch c urrents iZP and i Z Nh ave a negative  mathe ma t ic a l  si gn.  When thesw itchi n g state II I i s s w itched on, no  commutatio n  pr ocesse socc u r in t he su bm o dul e SM1 in th e up per valve  branc h  P1 and the sub module s S M1,  SM2 ,  S M3  in  t h e l o we r v a lve  branchN1  i n the  pha s e m odul e 4 1 if , bef ore the setti ngof t h e p ulseinhib itor ,the s um ofthe b ra nch voltages uZ P an d uZN ina p ha semo dule4 1 is o n a ver age equ al to t h e D Cv o l ta ge Udc and the bra nc h cu rrents i ZP and iZ Nh ave a ne ga tiv e ma t h emati cals ig n sincethe di o de  D 2 carri ed  the c or res pon dingb ranc h curr ent befo re sw i tching on thes witching stat e  I I I .I n co ntr ast, commut atio n  pro cess e stak e  plac e fro mt he semiconductor switc hS2 whi ch ca n be turned o ff to thed i o de D1 in  sai d  s u bmodules as aresul t of switc h ing on t he sw itchingstate III i n the su bmo dul e S M1i n  t he upper valv e bran ch  P1 and  th e submo dul esSM1 , S M2 , SM3 inthe lowe rva lv ebra nch N 1  in theph ase  m odu le 41 if, be foresett in go f t he puls e  i n h ibit or ,thesum  o f the  bra n chvoltage s uZP and  uZ N  ofaph ase mod ule 41 is onav erage equa ltothe DC v oltage U dc between the DC volta g e conne cti ons P o an d No, and  th e bran chc urrent s iZPand i ZN  ha v e  a po s i ti vema thematical s ign . Noco mmut ation p rocesses take plac e  wh en the switch ing  sta t e  I IIi ss wit ch e d o n in the submodul es SM2, SM 3, SM 4 in the u p per  v alve br anch P1  andt he subm odule SM4  in the l ow er v a l vebranch N1in the p hase modu l e 41i f,  befo resettin gofa pul se inh i bit or, t he sum  o f thebranc hvoltages  uZP and UZN of a phase  modul e 41ison averag e e q ual  to the D C vo ltage Udcand  th e bra nch curre ntsi ZP  an d  iZNhave a negativ e  m ath e m at ical sign,s i n cethe d iod e  D1 ca rrie d the correspondi n g branch curre nt b e f ore  sw i tchi ng  on the switch ing  s t a te III.Avoltage rat e of cha ng e  whic h, for  examp le, may b e4  kV/μs  can  be  assumedfor  a semicon du ct o r swit ch S 1or S2whichc an b e turned off in ea ch su b m odule SM
 P1_and the_submodule SM4 in the_lower valve_branch_N1 in_the_phase module 41,_if, before setting_of the pulse inhibitor,_the sum of_the_branch voltages uZP and uZN in a phase module 41 is on average equal_to_the DC_voltage_Udc_between the DC voltage connections_P0 and N0, and the_branch currents_iZP and iZN have a negative mathematical sign._When_the switching state_III is switched on, no commutation processes occur in_the submodule SM1 in the upper_valve branch P1_and_the_submodules SM1, SM2, SM3_in the lower valve branch N1_in the phase module 41 if,_before the setting of the pulse inhibitor,_the sum of the branch voltages_uZP and uZN in a_phase module_41 is on average equal_to the DC_voltage Udc_and the branch_currents iZP and iZN have a_negative mathematical sign_since the diode D2 carried the_corresponding_branch current before_switching_on_the switching_state III.
In contrast,_commutation_processes take_place_from the semiconductor switch S2 which_can_be turned off to the diode D1_in said submodules as_a_result of switching on_the switching state III in_the submodule SM1 in the upper_valve branch_P1 and_the submodules SM1, SM2, SM3 in the lower valve branch N1_in the phase module 41 if,_before setting of the_pulse inhibitor,_the_sum of the_branch_voltages uZP_and uZN of a phase module 41_is on_average equal to the DC voltage_Udc between the DC_voltage_connections Po and No, and the_branch currents iZP and iZN have_a positive mathematical sign. No_commutation_processes_take place when the switching_state III is switched on in_the submodules SM2,_SM3, SM4 in the upper valve branch_P1_and the submodule SM4 in the_lower_valve branch N1 in the phase_module_41_if, before setting of a_pulse inhibitor, the sum of the_branch voltages uZP and UZN of a phase module_41 is on_average equal to the DC_voltage_Udc_and the branch currents iZP and iZN have a negative_mathematical sign,_since the diode_D1 carried the corresponding branch current before switching on the_switching state III.
A voltage rate of change_which, for example, may be 4 kV/μs can be assumed for_a semiconductor switch S1 or S2 which can_be turned off in each submodule SM