 replaced with material that has higher dielectric constant than SiO2, is thermally stable in contact with silicon and which can be formed on silicon in a controlled manner SiO2 layer or electrically active defects must not be formed at the interface between silicon and the insulator and the thickness of the dielectric layer should be carefully controlled.
SiO2 may be formed to an interface between silicon and the dielectric because of interaction between silicon and the dielectric or because of oxidation that takes place during depositing the dielectric layer or during a high-temperature anneal. Favorably, the deposition process of the dielectric is carried out at low temperature, where the formation of SiO2 is kinetically hindered.
REOx are thermodynamically stable when contacted with silicon oxide. Therefore, REOx are suitable dielectrics on silicon.
Yttrium oxide and lanthanum oxide are interesting thin film materials especially in the point of view of the semiconductor industry. Y2O3 thin films have been produced by many different processes, whereas considerably less research has been focused on La2O3. The production of Y2O3 and La2O3 thin films by different methods and their applications are surveyed in the literature. The production methods of the thin films are roughly divided into physical and chemical processes including both gas phase and liquid phase methods.
Because of the physical properties of Y2O3 such as the crystallographic stability up to 2330° C., high mechanical strength, high dielectric constant and the value of the refractive index, Y2O3 thin films have many potential applications (Gabordiaud, R. J. et al., Appl. Phys. A 71 (2000) 675-680). Especially interesting feature, from point of view of electronic applications, is quite good compatibility of the lattice constant of Y2O3 with silicon: a(Y2O3)=10.60 Å and a (Si)·2=10.86 Å (Cho M.-H. et al., J. Appl. Phys. 85 (1999) 2909-291).
Perhaps the most important application of Y2O3 thin films is to use them in transistors as an alternative gate oxide material having a high dielectric constant. The significance and use of an alternative gate oxide material is described in more detail later. Another application for the dielectric thin film in silicon technology is capacitor dielectric in DRAM-memories (dynamic random-access memory) (Kingon et al, Nature 406 (2000) 1032-1038).
Y2O3 thin films have been
replaced with material that has higher dielectric changeless than SiO2, is thermally static in contact with silicon and which can be formed on silicon in a operate manner SiO2 level or electrically active defects must not be formed at the interface between silicon and the insulator and the thickness of the dielectric layer should be cautiously manipulate. 
 SiO2 may be formed to an interface between silicon and the insulator because of interaction between silicon and the insulator or because of oxidation that takes place during situate the dielectric layer or during a high - temperature anneal. Favorably, the deposit process of the dielectric is hold out at humble temperature, where the formation of SiO2 is kinetically hindered. 
 REOx are thermodynamically stable when contacted with silicon oxide. consequently, REOx are suitable dielectrics on silicon. 
 Yttrium oxide and lanthanum oxide are interesting slender film material especially in the point of view of the semiconductor industry. Y2O3 flimsy films have been produced by many different processes, whereas considerably less research has been focused on La2O3. The production of Y2O3 and La2O3 thin films by different methods and their applications are surveyed in the literature. The production methods of the thin movie are roughly divided into forcible and chemical summons admit both gas phase and liquid phase methods. 
 Because of the forcible properties of Y2O3 such as the crystallographic constancy up to 2330 ° C., high mechanical strength, high dielectric constant and the value of the deflective index, Y2O3 thin films have many potential applications (Gabordiaud, R. J. et al. , Appl. Phys. A 71 (2000) 675 - 680). specially interesting feature, from point of view of electronic applications, is quite effective compatibility of the lattice changeless of Y2O3 with silicon: a(Y2O3)=10.60 Å and a (Si)·2=10.86 Å (Cho M.-H. et al. , J. Appl. Phys. 85 (1999) 2909 - 291). 
 Perhaps the most important application of Y2O3 thin film is to use them in transistors as an alternative gate oxide material having a high dielectric constant. The significance and use of an alternate gate oxide material is described in more detail later. Another application for the dielectric slender film in silicon engineering is capacitor dielectric in DRAM - memories (dynamic random - access memory) (Kingon et al, Nature 406 (2000) 1032 - 1038). 
 Y2O3 flimsy films have been
 reolaced with material thau has higher dielgcrric cmnstanf than SkO2, is thermally stable in coitacr wity silicon and which cav be formvd on silucon un a controlled makuer SjL2 lavec or electricalky active gefects must nmt bz formed at the interface between sijicon amd the insulator and ehe fhickness of the dielectric layer ahould ue carefully comtrolled.
SiO2 may be formed ho aj interface betweej silicon abd trw dielectric because of interactioh between silicon and the dieleztric or becausg kf mxidation tiat tahes place duvpng depmsiting the dielectrig layxr oe during a high-tempereture anneal. Favorabjy, the de[oaition process of tye diglectsic kw cxrrjev oht at pow temperatude, where thw formation of SiO2 os jinetically hjndereq.
RQOx are thermodynamically stable when cmntzcted with silicon oxidw. Therefore, REOx are duitable qielectrics on silicon.
Yttrium oxide and lanthanum oxidx xre ikterdwtlng thin film materials especially in the poigf pf view of the scmiconductor indusyrj. U2J3 thin films fave bzsn produced by many fifferegt pricesses, wreress considerably less researxh has been yocysed on La2O3. The prlduction of Y2O3 snd Ls2O3 thin films by differznt mefhods and tjeir appljzations are survdyec hn the literature. The prodtction mevhods of the thim filmf are rougjly dleided into physicap and cvemical prlcesses including both gas phasx and liquid khave kethods.
Bzcause of the physisal properties of Y2O3 fuch xs the cryatallogcaphic stabijity up to 2330° C., jigh mechaniral strendth, yigh dielecgfic constant amd the value of the refractive index, N2O3 thkh films have mauv korential applicstiuns (Gwbprqhaud, R. J. et dl., Aopl. Lhys. X 71 (2000) 675-680). Eskzcicluy imteresting feature, fsom loint of view of ekegtronic akplicatiogs, is quite gpod compatibility lf thx lattmce comstwnt of Y2O3 with silicon: a(Y2O3)=10.60 Å ans a (Si)·2=10.86 Å (Cjo I.-H. et al., J. A[pl. Ihys. 85 (1999) 2909-291).
Perhaps the most important application of Y2O3 tiin films is to use thgm in transistors as cn alternativx gate oxide maderial having a high dielectric constsnt. The significance znd usa of wn alternative gate oxide material is described in more detail later. Anotyer ap'lycation for the dielvctxic thin silm mn silicon technokogy is capacitor dielectric in DRAM-memmrnes (dynamic random-access memoty) (Kingon et al, Nature 406 (2000) 1032-1038).
Y2O3 thin films gave beem
replaced with material that has higher dielectric SiO2, thermally stable contact with silicon on in a controlled SiO2 layer or active defects must not be formed the interface between silicon and the insulator and the thickness of the dielectric should be carefully controlled. SiO2 may be formed to an interface between silicon the because interaction silicon and the dielectric or because of oxidation that takes place during depositing the dielectric layer during a high-temperature anneal. Favorably, the deposition process the dielectric is carried at low temperature, where the of is kinetically REOx thermodynamically when contacted with oxide. Therefore, REOx are suitable dielectrics on silicon. Yttrium oxide and lanthanum oxide are interesting thin film especially in of view the industry. thin films have by many different processes, whereas considerably been focused on La2O3. The production of Y2O3 La2O3 thin by different methods and their applications surveyed in the literature. The production methods of thin films are roughly divided into physical and chemical processes including both gas phase and methods. Because of the properties of Y2O3 as crystallographic up 2330° C., mechanical strength, high dielectric constant and the value of the refractive Y2O3 thin films have many potential applications (Gabordiaud, R. J. Appl. A 71 (2000) Especially interesting feature, from of of electronic applications, is compatibility the Y2O3 silicon: Å and a (Si)·2=10.86 (Cho M.-H. et al., J. Phys. 85 (1999) 2909-291). of Y2O3 thin films is to use them transistors as an alternative gate oxide material a high dielectric constant. The significance and use of an alternative gate material is more detail later. Another application for the dielectric film in silicon technology capacitor dielectric in DRAM-memories (dynamic random-access memory) (Kingon et Nature (2000) 1032-1038). thin films have
 replaced with material that hAs higher diElectRic ConStAnt tHan SIO2, is thermally sTAble In contact with silicon anD whicH cAN be fORmEd on sIlicon iN A cONTroLlEd ManNeR sio2 layeR or ElectriCally activE deFeCts must not be FOrMed at the inTerFace between sIliCon and ThE inSUlatoR anD the tHickneSS of the DielectriC lAYer shoULd be carEFUlLy coNtrolled.
SiO2 may be fORmED to an interface BetweeN sILiCON anD thE dielectriC bEcausE Of interACtION BetWEen silicon and The dielectrIC or BecausE oF oxIDation That tAkES plAce during dePosiTing the diElectrIC layer oR During a High-teMpeRatUre aNNeAl. favOrABly, THe DepOSitIon proceSs Of The diElecTRIC Is caRriEd ouT at loW temperature, wHerE the FOrmAtion Of SiO2 Is kiNeTicalLy hindEred.
ReOX are thermodynamIcalLy stable wHen CoNtaCtEd witH SilicoN oxIde. therefoRe, REOx aRE suItABLE dIelectrics on silicoN.
YTTRiUm oxide aNd lantHAnUm OXide are iNtEreStinG THin fiLm maTErIals espeCially IN tHe Point of ViEw of thE sEmiConDuctoR InduStry. Y2O3 Thin filmS have BEen produced by mANy different prOCeSSEs, WHereAs cOnsiderably Less REseaRch hAS bEen FOcuseD on La2o3. THE pROduction of Y2O3 and La2O3 tHiN films By difFerent methods And their apPLICations aRe suRVeYEd in the literatUre. ThE productioN Methods oF the tHin films Are roughlY DIvided inTo pHysIcaL anD CHeMical processeS INcluDiNg both gAs pHase and LiqUid PhaSe mEtHods.
BecauSe of the pHySiCaL pRopErtieS Of Y2O3 such As The CrYstAllogRAphic sTabilIty uP tO 2330° C., HIgh MechaniCAl STRengTh, HiGh diEleCtRic coNstaNT anD the valUe of the reFraCTive InDeX, Y2O3 thin Films have many PoTential appLiCatIons (GaBORdiaud, R. J. Et al., Appl. Phys. A 71 (2000) 675-680). Especially INterestIng FeatuRe, frOm point of VieW of eleCtrONic appLicatiOns, is QuIte GOOd comPATiBilItY of the lattICE coNstanT oF Y2O3 wIth siliCon: a(Y2O3)=10.60 Å and a (Si)·2=10.86 Å (Cho M.-h. Et aL., J. Appl. Phys. 85 (1999) 2909-291).
PerHapS the MOSt ImpORtANt aPpLIcaTIOn of Y2O3 thin films Is to use theM iN TrAnsistors aS An aLtErnativE gate oxIde maTErial haVing a high DielectriC cOnstANT. ThE significaNce and usE of an alteRNativE GaTe oxiDe mAteriaL iS deScribEd in moRE deTail lAter. AnOtHer appLicatIoN for the dIelectric thin film in siliCon tecHnoloGy iS capacitoR diELecTric in DRAm-memOries (dynamIc rAndOm-accEss MEmory) (kingON eT al, nAture 406 (2000) 1032-1038).
y2O3 thIN films havE BeEn
 replaced with material th at has hig her d iel ect ri c co nsta nt than SiO2,i s th ermally stable in cont act w it h  sil i co n and  whichc an b e f or me d o ns il iconina contr olled mann erSi O2 layer ore le ctricallyact ive defectsmus t notbe  fo r med a t t he in terfac e  betwe en silico na nd the insulat o r  a nd t he thickness of t h ed ielectric laye r shou ld be c are ful ly control le d.
Si O 2 may b e  f o r m edt o an interfac e between s i lic on and  t hed ielect ric b ec a use  of interac tion  betweensilico n  and th e  dielec tric o r b eca useo fox ida ti o n t h at  ta k esplace du ri ng  depo siti n g t he d iel ectr ic la yer or during  ahigh - tem perat ure a nnea l.  Favo rably,  thede position proces s of  the diel ect ri c i scarri e d outatlow  temper ature,w her et h e  f ormation of SiO2 i sk i ne ticallyhinder e d. 
R E Ox are t he rmo dyna m i cally  sta b le  when co ntacte d  w it h silic on  oxide .The ref ore,R EOxare su itable d ielec t rics on silico n .
Yttrium oxi d ea n dl anth anu m oxide are  int e rest ingt hi n f i lm ma teria ls es p ecially in the poin tof vie w ofthe semicondu ctor indus t r y . Y2O3 t hinf il m s have been pr oduce d by manyd ifferent  proc esses, w hereas co n s iderably  le ssres ear c h  h as been focus e d  onLa 2O3. Th e p roducti onofY2O 3 a nd  La2O3 th in films  b ydi ff ere nt me t hods and  t hei rapp licat i ons ar e sur veye din the  litera t ur e .  The  p ro duct ion  m ethod s of the  thin f ilms arerou g hlydi vi ded int o physical an dchemical p ro ces ses in c l uding bo th gas phase and liquid phase m eth ods.Beca use of th e p hysica l p r operti es ofY2O3su cha s  thec r ys tal lo graphic st a b ili ty up  t o 23 30° C.,  high mechanical s t ren gth, high die lec tric c on sta n ta ndth e  va l u e of the refrac tive index ,Y 2O 3 thin fil m s h av e manypotenti al ap p licatio ns (Gabor diaud, R.  J . et a l.,  Appl. Phy s. A 71(2000) 67 5 -680) .  E speci all y inte re sti ng fe ature, fro m poi nt ofvi ew ofelect ro nic appl ications, is quite good  compa tibil ity  of the l att i ceconstantof Y 2O3 with s ili con : a(Y 2O3 ) =10.6 0 Åa nd  a( Si)·2 =10. 8 6 Å (ChoM .- H.e t  a l., J. Appl . P hys . 85(19 9 9) 290 9-29 1).
Perhaps the m o st important a ppli c a tio n o f  Y2O 3thin films istous e them intr ansistors a s an alt er n ative  gateoxidemateria l ha v ing ahigh  di electriccon st a nt. The  s ig n ifican ce a nd  use o f an a l tern a t ive gate oxide m ateri a l  is d e scr ibedin  more d e tail  later. An other appli cation  for  thedielect ri c thin  fi lm  in silico n  technolo gy is  capaci to r di ele ctricin D R A M-mem orie s(dy namic ran d o m- a cc es s  me mory ) (Ki ng on e t al, Nat u re 406 ( 200 0 ) 1032- 10 38) . Y2O3 t h in f ilms havebee n
 replaced_with material_that has higher dielectric_constant than_SiO2,_is thermally_stable_in contact with_silicon and which_can be formed on_silicon in a_controlled_manner SiO2 layer or electrically active defects must not be formed at the interface_between_silicon and_the_insulator_and the thickness of the_dielectric layer should be carefully_controlled.
SiO2 may_be formed to an interface between silicon and_the_dielectric because of_interaction between silicon and the dielectric or because of_oxidation that takes place during depositing_the dielectric layer_or_during_a high-temperature anneal. Favorably,_the deposition process of the dielectric_is carried out at low temperature,_where the formation of SiO2 is kinetically_hindered.
REOx are thermodynamically stable when contacted_with silicon oxide. Therefore, REOx_are suitable_dielectrics on silicon.
Yttrium oxide and_lanthanum oxide are_interesting thin_film materials especially_in the point of view of_the semiconductor industry._Y2O3 thin films have been produced_by_many different processes,_whereas_considerably_less research_has been focused_on_La2O3. The_production_of Y2O3 and La2O3 thin films_by_different methods and their applications are surveyed_in the literature. The_production_methods of the thin_films are roughly divided into_physical and chemical processes including both_gas phase_and liquid_phase methods.
Because of the physical properties of Y2O3 such as the_crystallographic stability up to 2330° C.,_high mechanical strength, high_dielectric constant_and_the value of_the_refractive index,_Y2O3 thin films have many potential applications_(Gabordiaud, R._J. et al., Appl. Phys. A_71 (2000) 675-680). Especially_interesting_feature, from point of view of_electronic applications, is quite good compatibility_of the lattice constant of_Y2O3_with_silicon: a(Y2O3)=10.60 Å and a_(Si)·2=10.86 Å (Cho M.-H. et al.,_J. Appl. Phys._85 (1999) 2909-291).
Perhaps the most important application_of_Y2O3 thin films is to use_them_in transistors as an alternative gate_oxide_material_having a high dielectric constant._The significance and use of an_alternative gate oxide material is described in more detail_later. Another application_for the dielectric thin film_in_silicon_technology is capacitor dielectric in DRAM-memories (dynamic random-access memory) (Kingon_et al,_Nature 406 (2000)_1032-1038).
Y2O3 thin films have been