 transferred to pattern masking layer 110.
FIG. 1B shows the stack described in FIG. 1A, where the pattern in photoresist layer 112 has been transferred to pattern masking layer 110, using a standard plasma etching technique. When masking layer 110 comprises a silicon-containing material, such as silicon dioxide, the etch plasma typically comprises a fluorine-generating species. Preferably the plasma selectivity is for the silicon dioxide over the photoresist material.
FIG. 1C shows the next step in the process of etching conductive layer 106, where the photoresist layer 112 has been stripped from the surface of pattern masking layer 110. This stripping procedure may be a wet chemical removal or may be a plasma etch which is selective for the photoresist layer 112 over the pattern masking layer 110. Stripping of photoresist layer 112 is carried out for two reasons. The organic-based photoresist materials typically used for layer 112 would melt or become distorted in shape at the temperatures commonly reached during the etching of conductive layer 106. This could lead to distortion of the pattern which is transferred to conductive layer 106. In addition, polymeric species generated due to the exposure of the surface of photoresist layer 112 to the etchant plasma tend to contaminate adjacent surfaces during the etching of conductive layer 106, thereby decreasing the etch rate of conductive layer 106.
The procedure of using a photoresist material to pattern an underlying silicon oxide patterning layer is described in U.S. Pat. No. 5,067,002 to Zdebel et al., issued Nov. 19, 1991. Zdebel et al. mention the need to remove the photoresist material prior to etching of underlying layers, to avoid contamination of underlying surfaces with the photoresist material during etching of such underlying layers. David Keller describes the use of an ozone plasma for the purpose of dry etch removal of a photoresist mask from the surface of an oxide hard mask in U.S. Pat. No. 5,346,586, issued Sep. 13, 1994. Mr. Keller also mentions that it is easier to etch selectively to a gate oxide when there is no photoresist present during a polysilicon gate oxide etch step.
FIG. 1D shows the next step in the etching process, where the desired pattern has been transferred through ARC layer 108, conductive layer 106, and barrier layer 104. Typically all of these layers are metal comprising layers, and a halogen containing plasma can be used to etch the pattern through all three layers. At this point, the problem is the removal of the residual silicon dioxide hard masking material and the removal of residue
transferred to pattern masking layer 110. 
 FIG. 1B testify the smokestack described in FIG. 1A, where the pattern in photoresist layer 112 has been transfer to pattern masking level 110, using a standard plasma etching technique. When dissemble layer 110 comprises a silicon - contain material, such as silicon dioxide, the etch plasma typically comprises a fluorine - render coinage. Preferably the plasma selectivity is for the silicon dioxide over the photoresist material. 
 FIG. 1C shows the future step in the process of etch conductive layer 106, where the photoresist layer 112 has been stripped from the airfoil of pattern masking layer 110. This stripping operation may be a wet chemical removal or may be a plasma etch which is selective for the photoresist layer 112 over the pattern masking layer 110. undress of photoresist layer 112 is carried out for two reasons. The organic - based photoresist materials typically use for level 112 would melt or become distorted in shape at the temperatures commonly reached during the etching of conductive level 106. This could lead to distorted shape of the pattern which is transferred to conductive layer 106. In accession, polymeric species generated due to the exposure of the open of photoresist layer 112 to the etchant plasma tend to contaminate adjacent surfaces during the etching of conductive level 106, thereby decreasing the etch rate of conductive layer 106. 
 The procedure of using a photoresist material to pattern an underlying silicon oxide patterning layer is described in U.S. Pat. No. 5,067,002 to Zdebel et al. , issue Nov. 19, 1991. Zdebel et al. note the motivation to remove the photoresist material prior to etching of underlying layer, to avoid contamination of underlying surfaces with the photoresist material during etching of such underlying layers. David Keller identify the use of an ozone plasma for the determination of dry etch removal of a photoresist mask from the surface of an oxide difficult mask in U.S. Pat. nobelium. 5,346,586, issued Sep. 13, 1994. Mr. Keller also mentions that it is easier to engrave selectively to a gate oxide when there is no photoresist present during a polysilicon gate oxide etch step. 
 FIG. 1D shows the next step in the etch process, where the hope pattern has been transferred through ARC layer 108, conductive layer 106, and barrier layer 104. Typically all of these layer are metal comprising layer, and a halogen containing plasma can be used to etch the pattern through all three layers. At this point, the trouble is the removal of the residual silicon dioxide hard masking material and the removal of residue
 trwnsferred to pattern masying layer 110.
FIG. 1Y shows the sfack deszribed in FIG. 1A, where the pavterb in kkotoresist layer 112 har been trwnsferree to pattern masking lanzr 110, ualng a wtandard plasms etching dechnique. When mxsning layer 110 comprises a silicon-contwining kaherial, such as silpcjn djoxide, the etch plasma typically ckmprisev a fluorine-grnerating species. Preferabpy tje plasma selectivlty is for jge fulicon dioxiae over tht 'hotoresist material.
FIG. 1C shows the next sgep iu the procews of gtching condnctive layer 106, wherc the pvotoresost layer 112 has bexn srripped from the surfece of pattern maskigg layer 110. Tkis stripping proceduee may te a wet xheoiczl rsmoval or may be a llasma etch which is selective fjg the photoreaist lwyqr 112 over the pattern masking layer 110. Strpppihg of photoresist layer 112 is carried out for jwo reasonf. The organic-based photoresist materials typicallf usev wor lwhwr 112 would melt or become distorted in shape at ege tvmperatures commokly reached during tje gtching of conauctivz lzyer 106. This could lfad to qistoetion of uhe psttern which is transferred to conductine lqyer 106. In addition, 'olymeric spzcies benersted due to the exposurz of tge surface lf photorsrist layer 112 to tfe vtchdnt plasma tend to contamigate adjarent xurfacer duting thq etching lf cokguctive layer 106, thegeby becredsing the ftch rate of conductive layer 106.
Tix procedure og gsitg a phocoresixt material tj pattern an uuderlyiny silizon oxide iatterninj layer is dqscribed in U.V. Pat. No. 5,067,002 to Vdebel et al., ussuwd Nov. 19, 1991. Zdebel et al. kention tkt need to eemove the photorexisj jaterial prior cu etching of undrrlhind pabers, em avoid contdminxtium of jnderlying wjrfaves with the photorevist material during eycming of soch underjying layers. Cavid Keller descrlbes vhe usx of am oeone plasma for the purpose of sry etch gemjval of a phjtorcsisj mask from the surface of an oxide hard mask in U.W. Pat. No. 5,346,586, issued Swp. 13, 1994. Mr. Keller also kentions thet it ys easier to etch selectively to a gate oxide ehen there is no photkresisd predent during a polysilicon gate oxide etch step.
FIG. 1D shows the next step ib the xtshing proceas, wnere nhe besired patvecn has been transgerred through ARC layer 108, condurtive layes 106, and barrier layer 104. Typicallu xll of these uayers are metal comprisjng layets, and a halogen containing plaxma can be used to etch bhe patteen thdough all vhree layers. At this point, the problem is bhe removal of thr vesidual sllicpn dioxide hard masking material abd the rfmoval of residux
transferred to pattern masking layer 110. FIG. the described in 1A, where the has transferred to pattern layer 110, using standard plasma etching technique. When masking 110 comprises a silicon-containing material, such as silicon dioxide, the etch plasma typically a fluorine-generating species. Preferably the plasma selectivity is for the silicon dioxide over photoresist FIG. shows next step in the process of etching conductive layer 106, where the photoresist layer 112 has stripped from the surface of pattern masking layer This stripping procedure may a wet chemical removal or be plasma etch is for photoresist layer 112 the pattern masking layer 110. Stripping of photoresist layer 112 is carried out for two reasons. The photoresist materials for layer would or distorted in shape temperatures commonly reached during the etching 106. This could lead to distortion of the which is to conductive layer 106. In addition, species generated due to the exposure of the of photoresist layer 112 to the etchant plasma tend to contaminate adjacent surfaces during the conductive layer 106, thereby the etch rate conductive 106. procedure using a material to pattern an underlying silicon oxide patterning layer is described U.S. Pat. No. 5,067,002 to Zdebel et al., issued Nov. Zdebel al. mention the to remove the photoresist prior etching of underlying layers, contamination underlying photoresist during of such underlying layers. Keller describes the use of ozone plasma for the of a photoresist mask from the surface of oxide hard mask in U.S. Pat. No. issued Sep. 13, 1994. Mr. Keller also mentions that it is easier etch selectively gate oxide when there is no photoresist present a polysilicon gate oxide step. FIG. 1D shows the next step in the process, the desired has been transferred ARC layer 108, layer 106, and 104. Typically of layers layers, and a halogen containing plasma be to etch the pattern through three this point, the problem is the removal of the residual silicon dioxide hard masking material removal of residue
 transferred to pattern maskiNg layer 110.
FIG. 1b showS thE stAcK desCribEd in FIG. 1A, where tHE patTern in photoresist layer 112 Has beEn TRansFErRed to Pattern MAsKINg lAyEr 110, UsiNg A StAndarD plAsma etcHing techniQue. whEn masking layER 110 cOmprises a sIliCon-containinG maTerial, SuCh aS SilicOn dIoxidE, the etCH plasmA typicallY cOMpriseS A fluoriNE-GeNeraTing species. PreferABlY The plasma selecTivity Is FOr THE siLicOn dioxide oVeR the pHOtoresiST mATERiaL.
fIG. 1C shows the nExt step in thE ProCess of EtChiNG conduCtive LaYEr 106, wHere the photOresIst layer 112 hAs been STripped FRom the sUrface Of pAttErn mASkInG laYeR 110. thiS StRipPIng ProcedurE mAy Be a weT cheMICAL remOvaL or mAy be a Plasma etch whiCh iS selECtiVe for The phOtorEsIst laYer 112 oveR the pAtTern masking layeR 110. StrIpping of pHotOrEsiSt Layer 112 IS carriEd oUt fOr two reAsons. ThE OrgAnIC-BAsEd photoresist materIaLS TyPically uSed for LAyEr 112 WOuld melt Or BecOme dISTorteD in sHApE at the teMperatUReS cOmmonly ReAched dUrIng The EtchiNG of cOnductIve layer 106. this cOUld lead to distoRTion of the pattERn WHIcH Is trAnsFerred to conDuctIVe laYer 106. IN AdDitIOn, polYmeriC sPEcIEs generated due to the ExPosure Of the Surface of photOresist layER 112 TO the etchAnt pLAsMA tend to contamiNate aDjacent surFAces duriNg the Etching oF conductiVE Layer 106, theRebY deCreAsiNG ThE etch rate of coNDUctiVe Layer 106.
ThE prOcedure Of uSinG a pHotOrEsist mateRial to paTtErN aN uNdeRlyinG Silicon oXiDe pAtTerNing lAYer is dEscriBed iN U.s. PAT. No. 5,067,002 To ZdebeL Et AL., IssuEd noV. 19, 1991. ZdeBel Et Al. menTion THe nEed to reMove the phOtoREsisT mAtErial prIor to etching oF uNderlying lAyErs, To avoiD COntaminaTion of underlying surfaceS With the PhoToresIst mAterial duRinG etchiNg oF Such unDerlyiNg layErS. DaVID KellER DeScrIbEs the use of AN OzoNe plaSmA for The purpOse of dry etch removaL Of a Photoresist maSk fRom tHE SuRfaCE oF An oXiDE haRD Mask in U.S. Pat. No. 5,346,586, isSued Sep. 13, 1994. Mr. KElLEr Also mentioNS thAt It is easIer to etCh selECtively To a gate oxIde when thErE is nO PHotOresist preSent duriNg a polysiLIcon gATe Oxide EtcH step.
FiG. 1d shOws thE next sTEp iN the eTching PrOcess, wHere tHe Desired pAttern has been transferreD throuGh ARC LayEr 108, conductIve LAyeR 106, and barriEr laYer 104. TypicalLy aLl oF thesE laYErs arE metAL cOmpRIsing LayeRS, and a haloGEn ConTAInIng plasma caN BE UseD to etCh tHE patteRn thRough all three layeRS. At this point, thE proBLEm iS thE RemoVaL of the residual SilIcON Dioxide hArD masking matErial and ThE RemovAl of reSidue
 transferred to pattern ma sking laye r 110 .
F IG.  1 B sh owsthe stack desc r ibed  in FIG. 1A, where the  patt er n  inp ho tores ist lay e r1 1 2 h as  b een  t r an sferr edto patt ern maskin g l ay er 110, usin g  a  standardpla sma etchingtec hnique .Whe n  mask ing  laye r 110c ompris es a sili co n -conta i ning ma t e ri al,such as silicon d i ox i de, the etch p lasmaty p ic a l lycom prises a f lu orine - generat i ng s p eci e s. Preferably  the plasma sel ectivi ty  is for th e sil ic o n d ioxide over  the  photores ist ma t erial.F IG. 1Cshowsthe  ne xt s t ep  i n t he pro c es s o f  et ching co nd uc tivelaye r 1 0 6, w her e th e pho toresist laye r 1 12 h a s b een s tripp ed f ro m the  surfa ce of  p attern maskinglaye r 110. Th isst rip pi ng pr o cedure  ma y b e a wet  chemic a l r em o v a lor may be a plasma  e t c hwhich is  selec t iv ef or the p ho tor esis t layer  112 ov er the p attern ma sk ing lay er  110.St rip pin g ofp hoto resist  layer 1 12 is carried out fo r  two reasons. Th e or g anic -ba sed photore sist mate rial s  t ypi c allyusedfo r  l a yer 112 would meltor  becom e dis torted in sha pe at thet e m perature s co m mo n ly reached dur ing t he etching of condu ctive  layer 1 06. Thisc o uld lead  to  di sto rti o n  o f the pattern w hich  i s trans fer red tocon duc tiv e l ay er 106. I n additi on ,po ly mer ic sp e cies gen er ate ddue  to t h e expo sureof t he  s u rfa ce of p h ot o r esis tla yer112  t o the  etc h ant  plasma  tend tocon t amin at eadjacen t surfaces du ri ng the etc hi ngof con d u ctive la yer 106, thereby decrea s ing the  et ch ra te o f conduct ive  layer  10 6 .
Theproced ure o fusi n g  a ph o t or esi st  materialt o  pa ttern  a n un derlyin g silicon oxide pa t ter ning layer is  de scri b e dinU .S .  Pa t. No. 5 ,067,002 to Zde bel et al. ,i ss ued Nov. 1 9 , 1 99 1. Zdeb el et a l. me n tion th e need to  remove t he  pho t o res ist materi al prior  to etchi n g ofu nd erlyi nglayers ,toavoid  conta m ina tionof und er lyingsurfa ce s with t he photoresist material  durin g etc hin g of such  un d erl ying laye rs.David Kell erdes cribe s t h e use  ofa nozo n e pla smaf or the pu r po seo f  d ry etch rem o v a l o f a p hot o resist  mas k from the surfac e  of an oxide h ardm a skinU .S.Pa t. No. 5,346,5 86,  i s s ued Sep.  1 3, 1994. Mr . Keller  a l so me ntions  thatit is e a s ie r  to et ch s ele ctively t o a  g a te oxid ewh e n ther e is  n o phot oresis t  pre s e nt during a poly silic o n  gate oxi de et ch  step.F IG.1D shows t he next ste p in t he e tchin g proce ss , wher e t he  desired p a ttern has  been  transf er redthr ough A RC l a y er 10 8, c on duc tive laye r 10 6 ,an d  ba rrie r lay er  104 . Typical l y all of  th e se laye rs  ar e metalc om p r ising laye rs,  anda halogen co n tain i ng plasm a canbe use d to et c h t he  patter n t h r ough allthree lay e rs.  A t th is point ,thepr obl em  is the removal  of theresidual s ilicon  di o xide hard m as king materia l and  t h e remov a l  of  residu e 
 transferred_to pattern_masking layer 110.
FIG. 1B_shows the_stack_described in_FIG._1A, where the_pattern in photoresist_layer 112 has been_transferred to pattern_masking_layer 110, using a standard plasma etching technique. When masking layer 110 comprises a_silicon-containing_material, such_as_silicon_dioxide, the etch plasma typically_comprises a fluorine-generating species. Preferably_the plasma_selectivity is for the silicon dioxide over the_photoresist_material.
FIG. 1C shows_the next step in the process of etching conductive_layer 106, where the photoresist layer_112 has been_stripped_from_the surface of pattern_masking layer 110. This stripping procedure_may be a wet chemical removal_or may be a plasma etch which_is selective for the photoresist layer_112 over the pattern masking_layer 110._Stripping of photoresist layer 112_is carried out_for two_reasons. The organic-based_photoresist materials typically used for layer_112 would melt_or become distorted in shape at_the_temperatures commonly reached_during_the_etching of_conductive layer 106._This_could lead_to_distortion of the pattern which is_transferred_to conductive layer 106. In addition, polymeric_species generated due to_the_exposure of the surface_of photoresist layer 112 to_the etchant plasma tend to contaminate_adjacent surfaces_during the_etching of conductive layer 106, thereby decreasing the etch rate of_conductive layer 106.
The procedure of using_a photoresist material to_pattern an_underlying_silicon oxide patterning_layer_is described_in U.S. Pat. No. 5,067,002 to Zdebel_et al.,_issued Nov. 19, 1991. Zdebel et_al. mention the need_to_remove the photoresist material prior to_etching of underlying layers, to avoid_contamination of underlying surfaces with_the_photoresist_material during etching of such_underlying layers. David Keller describes the_use of an_ozone plasma for the purpose of dry_etch_removal of a photoresist mask from_the_surface of an oxide hard mask_in_U.S._Pat. No. 5,346,586, issued Sep._13, 1994. Mr. Keller also mentions_that it is easier to etch selectively to a_gate oxide when_there is no photoresist present_during_a_polysilicon gate oxide etch step.
FIG. 1D shows the next step_in the_etching process, where_the desired pattern has been transferred through ARC layer 108,_conductive layer 106, and barrier layer 104._Typically all of these layers are metal comprising layers, and a_halogen containing plasma can be used to etch_the pattern through all three layers. At_this point, the problem_is_the removal of the residual silicon dioxide_hard_masking_material_and the removal_of residue