 discloses that the silicone rubber composition may further comprise up to 20 parts by weight of a liquid organosilicon compound. 1. Field of the Invention
This invention relates generally to semiconductor manufacturing, and, more particularly, to a method and apparatus using metrology data from an integrated source for modeling system dynamics within a process batch of semiconductor wafers.
2. Description of the Related Art
The technology explosion in the manufacturing industry has resulted in many new and innovative manufacturing processes. Today""s manufacturing processes, particularly semiconductor manufacturing processes, call for a large number of important steps. These process steps are usually vital, and therefore, require a number of inputs that are generally fine-tuned to maintain proper manufacturing control.
The manufacture of semiconductor devices requires a number of discrete process steps to create a packaged semiconductor device from raw semiconductor material. The various processes, from the initial growth of the semiconductor material, the slicing of the semiconductor crystal into individual wafers, the fabrication stages (etching, doping, ion implanting, or the like), to the packaging, and final testing of the completed device, are so different from one another and specialized that the processes may be performed in different manufacturing locations that contain different control schemes.
Generally, a set of processing steps is performed on a group of semiconductor wafers, sometimes referred to as a lot. For example, a process layer composed of a variety of materials may be formed above a wafer. Thereafter, a patterned layer of photoresist may be formed above the process layer using known photolithography techniques. Typically, an etch process is then performed on the process layer using the patterned layer of photoresist as a mask. This etching process results in formation of various features or objects in the process layer. Such features may be used for a gate electrode structure for transistors. Many times, trench structures are also formed on the substrate of the semiconductor wafer to isolate electrical areas on a semiconductor wafer. One example of an isolation structure that can be used is a shallow trench isolation (STI) structure. Typically, STI structures are formed on the semiconductor wafers by forming trenches in the wafer and filling such trenches with an insulating material, such as silicon dioxide.
The manufacturing tools within a semiconductor manufacturing facility typically communicate with a manufacturing framework or a network of processing modules. Each, manufacturing toot is generally connected to an equipment interface. The equipment interface is connected to a machine interface to which a manufacturing network is connected, thereby facilitating communications between the manufacturing tool and the manufacturing framework. The machine interface can generally be part of an advanced process control (
discloses that the silicone rubber composition may further constitute up to 20 part by weight of a liquid organosilicon compound. 1. Field of the Invention 
 This invention refer generally to semiconductor fabrication, and, more particularly, to a method and apparatus using metrology datum from an integrate source for model system dynamics within a summons batch of semiconductor device wafers. 
 2. Description of the Related Art 
 The technology plosion in the manufacturing diligence has result in many new and innovative manufacturing process. Today""s manufacturing processes, particularly semiconductor fabrication processes, address for a large number of important measure. These process steps are usually vital, and therefore, command a number of inputs that are generally fine - tuned to maintain proper manufacturing control. 
 The manufacture of semiconductor device requires a number of discrete summons footstep to create a packaged semiconductor device from naked semiconductor device material. The various processes, from the initial increase of the semiconductor material, the slicing of the semiconductor crystal into individual wafers, the fabrication stages (etching, doping, ion implanting, or the like), to the packaging, and concluding testing of the complete device, are therefore different from one another and specialized that the processes may be performed in unlike manufacturing locations that contain different control schemes. 
 Generally, a set of processing steps is do on a group of semiconductor wafer, sometimes referred to as a lot. For model, a process level composed of a variety of materials may be formed above a wafer. Thereafter, a pattern layer of photoresist may be formed above the process layer using sleep together photolithography techniques. Typically, an etch process is then performed on the process layer using the patterned layer of photoresist as a masquerade. This etching process consequence in formation of various features or objects in the process layer. Such features may be use for a gate electrode structure for transistors. Many times, trench structures are also formed on the substrate of the semiconductor wafer to sequester electrical areas on a semiconductor wafer. One example of an isolation structure that can be used is a shallow trench isolation (STI) structure. Typically, STI structures are form on the semiconductor wafers by forming trench in the wafer and fill up such trenches with an insulating material, such as silicon dioxide. 
 The manufacturing cock within a semiconductor manufacturing facility typically commune with a manufacturing framework or a net of processing modules. Each, manufacturing toot is generally connected to an equipment interface. The equipment interface is connected to a machine interface to which a manufacturing network is connected, thereby facilitating communications between the manufacturing tool and the manufacturing framework. The machine interface can generally be part of an advance summons control (
 didcloses that the silicont rubber compositnin may furthsr comprkse up to 20 parts by weight oh a oiquie organosilicon compouvd. 1. Field of the Unveition
This inventmkn relabzs gehcrallv vo semiconductot manufacturhng, and, more pdrgieularly, to a method and apparatus usyng mettopogy data from an pneegrzneb source for modeling system dyhamics xithin a procesx batch of semiconductor wwferd.
2. Description of tje Related Qrt
Trw technology explosion in the manuracturing industry has resulted in mcny new and ibnogdtive manufecturigg processes. Today""s kanufacyuring processcs, pacticylarly semiconductor kanufacturing procgsses, call fkr a large number od impmrtatt sgwps. Thtse pdocess stxps are usuzlly vital, qnd therefore, requite q number of ihputs ehwt are generally fine-tuned to maintain kroped manufacturing control.
Rhe manufacture of seliconductjr devices requires a number of discrete process vteps go evcate q oackaged semiconductor device from raw semicogsuvtpr material. Thc various processex, vrpi the initial growtk or the semiconductog materyal, tye slicind of the semiconductor crystal unto individlal qafers, the fabricacion stages (ztchinb, dopong, ion implanting, or tke liks), to the pafkaging, aha final testing uf nhe wompleted device, are so disferent fcom oue anothdr amd spesialized tjat tma processes may be perflrked in difverent manufacturing locations viat contain dofxervnt contrjl scmemes.
Generally, w set of procexsing sceps ir performes on a jroup of semyconductor waxgrs, sometimes referreq to as q lot. Fuf example, a prpcess layvr composed of a variety of jaterials may bz dormed above a eafdr. Ehvreefter, d patterned nayef ow photuresist may ce fprmed above the procass mayer using known lhjtolithotraphy tqchniques. Typocally, an etch profess ms thei perfprmgd on the process layer using tge patterjed layer of phjtorcsisj as a mask. This etching process results in formatmon of various features or objects in the krogess layer. Snch fewtures maf be used for a gate electrode structmre for transistors. Mahy timas, trfnch structures are also formed on the substrate of the semiconductor wafwr to msjlate electdicak areds pn a sqmicliductor wafer. One example of an isolation structnre that cdn be used is a shallow trench irolation (STI) rtructure. Typically, STI atructurrs are formed on the semiconducyor wafers by forming trcnches in the safer and hilling such trenchex with an ibsulatibg mwterial, such xs xipicon diodide.
Uhe janufacturing tools within a semuconduxtlr manufacturing facility tnplcally commugicate with a mahufadhurine framework ot a network of processing modules. Vacr, manufacturint toot is gengrally cmnnected to en equipment interface. The equipment interface is connected to z machine interfage to which a manofecturing network is connccted, thereby facilitatinc communications between the manufacturing vpol avd nhe mahufacturing fgamework. The machint nnterface can eenerqlly be parr of an advznced ptosess eontrol (
discloses that the silicone rubber composition may up 20 parts weight of a of Invention This invention generally to semiconductor and, more particularly, to a method apparatus using metrology data from an integrated source for modeling system dynamics within process batch of semiconductor wafers. 2. Description of the Related Art The technology in manufacturing has in many new and innovative manufacturing processes. Today""s manufacturing processes, particularly semiconductor manufacturing processes, call for large number of important steps. These process steps usually vital, and therefore, a number of inputs that generally to maintain manufacturing The of semiconductor devices a number of discrete process steps to create a packaged semiconductor device from raw semiconductor material. The processes, from growth of semiconductor the of the semiconductor individual wafers, the fabrication stages (etching, or the like), to the packaging, and final of the device, are so different from one and specialized that the processes may be performed different manufacturing locations that contain different control schemes. Generally, a set of processing steps is a group of semiconductor sometimes referred to a For a layer composed a variety of materials may be formed above a wafer. Thereafter, patterned layer of photoresist may be formed above the process known techniques. Typically, an process is then performed the layer using the patterned photoresist a process in of various features or in the process layer. Such may be used for transistors. Many times, trench structures are also formed the substrate of the semiconductor wafer to electrical areas on a semiconductor wafer. One example of an isolation structure can be a shallow trench isolation (STI) structure. Typically, STI are formed on the wafers by forming trenches in the wafer and filling trenches an insulating such as silicon The manufacturing tools a semiconductor manufacturing communicate with manufacturing or processing modules. Each, manufacturing toot is connected an equipment interface. The equipment is a machine interface to which a manufacturing network is connected, thereby facilitating communications between the and the manufacturing framework. machine can generally be part of an advanced process control (
 discloses that the silicone rUbber compoSitioN maY fuRtHer cOmprIse up to 20 parts by WEighT of a liquid organosilicoN compOuND. 1. FieLD oF the INventioN
thIS InvEnTiOn rElATeS geneRalLy to semIconductor ManUfActuring, and, mORe ParticularLy, tO a method and aPpaRatus uSiNg mETroloGy dAta frOm an inTEgrateD source foR mODeling SYstem dyNAMiCs wiThin a process batch OF sEMiconductor wafErs.
2. DesCrIPtION of The related Art
thE techNOlogy exPLoSION in THe manufacturiNg industry hAS reSulted In ManY New and InnovAtIVe mAnufacturinG proCesses. TodAy""s manUFacturiNG procesSes, parTicUlaRly sEMiCoNduCtOR maNUfActURinG processEs, CaLl for A larGE NUMber Of iMporTant sTeps. These procEss StepS Are UsualLy vitAl, anD tHerefOre, reqUire a NuMber of inputs thaT are Generally FinE-tUneD tO mainTAin proPer ManUfacturIng contROl.
THe MANUfActure of semiconducToR DEvIces requIres a nUMbEr OF discretE pRocEss sTEPs to cReatE A pAckaged sEmiconDUcToR device FrOm raw sEmIcoNduCtor mATeriAl. The vArious prOcessES, from the initiaL Growth of the seMIcONDuCTor mAteRial, the slicIng oF The sEmicONdUctOR crysTal inTo INdIVidual wafers, the fabrIcAtion sTages (Etching, doping, Ion implantING, Or the likE), to tHE pACkaging, and finaL testIng of the coMPleted deVice, aRe so diffErent from ONE another And SpeCiaLizED ThAt the processeS MAy be PeRformed In dIfferenT maNufActUriNg Locations That contAiN dIfFeRenT contROl schemeS.
GEneRaLly, A set oF ProcesSing sTeps Is PeRForMed on a gROuP OF semIcOnDuctOr wAfErs, soMetiMEs rEferred To as a lot. FOr eXAmplE, a PrOcess laYer composed of A vAriety of maTeRiaLs may bE FOrmed aboVe a wafer. Thereafter, a pattERned layEr oF photOresIst may be fOrmEd abovE thE ProcesS layer Using KnOwn PHOtoliTHOgRapHy Techniques. tYPicAlly, aN eTch pRocess iS then performed on thE ProCess layer usinG thE patTERnEd lAYeR Of pHoTOreSISt as a mask. This etChing proceSs REsUlts in formATioN oF variouS featurEs or oBJects in The procesS layer. SucH fEatuRES maY be used for A gate eleCtrode strUCture FOr TransIstOrs. ManY tImeS, trenCh struCTurEs are Also foRmEd on thE subsTrAte of the Semiconductor wafer to isoLate elEctriCal Areas on a sEmiCOndUctor wafeR. One Example of aN isOlaTion sTruCTure tHat cAN bE usED is a sHallOW trench isOLaTioN (stI) Structure. TyPICAllY, STI sTruCTures aRe foRmed on the semicondUCtor wafers by foRminG TRenCheS In thE wAfer and filling SucH tRENches witH aN insulating Material, SuCH as siLicon dIoxide.
the manuFACtURing toOls wIthIn a semicoNduCtOR manufaCtUrINg faciLity TyPicallY commuNIcatE WIth a manufacturinG framEWOrk or A NetWork oF pRocessiNG modUles. Each, maNufacturing Toot is GeneRally ConnectEd To an eqUipMeNt interfacE. the equipmEnt inTerface Is ConnEctEd to a mAchiNE InterFace To WhiCh a manufaCTUrINg NeTWorK is cOnnecTeD, theReby facilITating coMmuNIcationS bEtwEEN the maNUfACTuring tool And The maNUFacturing fRAmewORk. tHe macHine inTerfacE can genERalLy Be part oF an ADVanced proCess contrOL (
 discloses that the silico ne rubbercompo sit ion  m ay f urth er comprise up to 2 0 parts by weight of a  liqu id orga n os ilico n compo u nd . 1.Fi el d o ft he  Inve nti on
This  invention  re la tes generall y  t o semicond uct or manufactu rin g, and ,mor e  part icu larly , to a method  and appa ra t us usi n g metro l o gy  dat a from an integra t ed source for mod elingsy s te m dyn ami cs withinaproce s s batch of s e mic o nductor wafer s.
2. Descr i pti on ofth e R e latedArt
T he tec hnology exp losi on in the  manuf a cturing industr y hasres ult ed i n  m an y n ew and in nov a tiv e manufa ct ur ing p roce s s e s . To day ""smanuf acturing proc ess es,p art icula rly s emic on ducto r manu factu ri ng processes, c allfor a lar genu mbe rof im p ortant  st eps . These  proces s  st ep s a re  usually vital, an dt h er efore, r equire anu m ber of i np uts  tha t are g ener a ll y fine-t uned t o  m ai ntain p ro per ma nu fac tur ing c o ntro l.
The  manufac tureo f semiconducto r  devices requ i re s an umbe r o f discreteproc e ss s teps to  cr e ate a  pack ag e ds emiconductor device  f rom ra w sem iconductor ma terial. Th e v arious p roce s se s , from the ini tialgrowth oft he semic onduc tor mate rial, the s licing o f t hesem ico n d uc tor crystal i n t o in di vidualwaf ers, th e f abr ica tio nstages (e tching,do pi ng ,ion  impl a nting, o rthe  l ike ), to the pa ckagi ng,an df ina l testi n go f  the  c om plet edde vice,  are sodiffere nt from o nea noth er  a nd spec ialized thatth e processe smay  be pe r f ormed in  different manufacturin g  locati ons  that  con tain diff ere nt con tro l  schem es.
Ge neral ly , a s et of p ro ces si ng steps i s per forme don a  groupof semiconductor w a fer s, sometimesref erre d to  as al ot.  F o r e x a mple, a process  layer com po s ed  of a vari e tyof  materi als may  be f o rmed ab ove a waf er. There af ter, a  pa tterned la yer of p hotoresis t  mayb eforme d a bove t he  pr ocess  layer usi ng kn own ph ot olitho graph ytechniqu es. Typically, an etchproces s isthe n perform edo n t he proces s la yer usingthe  pa ttern edl ayerof p h ot ore s ist a s am ask. This et chi n g  p rocess resu l t s  in  form ati o n of v ario us features or ob j ects in the pr oces s lay er. Such  f eatures may be  us ed f or a gat eelectrode s tructure  f o r tra nsisto rs. Ma ny time s ,  t r ench s truc tur es are al sofo r med onth es ubstra te o fthe se micond u ctor w afer to isolateelect r i cal a r eas  on a  s emicond u ctor  wafer. On e example o f an i sola tionstructu re  thatcan  b e used isa  shallowtrenc h isola ti on ( STI ) stru ctur e .  Typi call y,  ST I structu r e sa re  f o rme d on  these mico nductor w a fers byfor m ing tre nc hes i n thew af e r  and filli ngsucht r enches wit h  ani ns u latin g mate rial,such as sil ic on diox ide . The manuf acturingt ool swith in a sem ic ondu ct orma nufacturing fac ility ty picallyc o mmunic ate with a manu fa cturing fram ework  o r  a netw o r k o f proce s sin g m odu les.  Ea ch,m anufacturing toot is gen eral ly co n nec ted t o aneq uipmenti nter face. Th e  equipment in terface is conn e cte d  toa m a ch in e interfa cet o whi ch a  ma nufa ctu ring n etwo r k is co nnec ted, t here by  f acilitati ng  commun i cati o nsbetw een t he  m a nu facturi ng tooland t he  manufact u ring fr amew or k. The machin e interfaceca n ge nerall y  be  pa r t  of an advan ced proces s c ontrol (
 discloses_that the_silicone rubber composition may_further comprise_up_to 20_parts_by weight of_a liquid organosilicon_compound. 1. Field of_the Invention
This invention_relates_generally to semiconductor manufacturing, and, more particularly, to a method and apparatus using metrology_data_from an_integrated_source_for modeling system dynamics within_a process batch of semiconductor_wafers.
2. Description_of the Related Art
The technology explosion in the_manufacturing_industry has resulted_in many new and innovative manufacturing processes. Today""s manufacturing_processes, particularly semiconductor manufacturing processes, call_for a large_number_of_important steps. These process_steps are usually vital, and therefore,_require a number of inputs that_are generally fine-tuned to maintain proper manufacturing_control.
The manufacture of semiconductor devices requires_a number of discrete process_steps to_create a packaged semiconductor device_from raw semiconductor_material. The_various processes, from_the initial growth of the semiconductor_material, the slicing_of the semiconductor crystal into individual_wafers,_the fabrication stages_(etching,_doping,_ion implanting,_or the like),_to_the packaging,_and_final testing of the completed device,_are_so different from one another and specialized_that the processes may_be_performed in different manufacturing_locations that contain different control_schemes.
Generally, a set of processing steps_is performed_on a_group of semiconductor wafers, sometimes referred to as a lot. For_example, a process layer composed of_a variety of materials_may be_formed_above a wafer._Thereafter,_a patterned_layer of photoresist may be formed above_the process_layer using known photolithography techniques. Typically,_an etch process is_then_performed on the process layer using_the patterned layer of photoresist as_a mask. This etching process_results_in_formation of various features or_objects in the process layer. Such_features may be_used for a gate electrode structure for_transistors._Many times, trench structures are also_formed_on the substrate of the semiconductor_wafer_to_isolate electrical areas on a_semiconductor wafer. One example of an_isolation structure that can be used is a shallow_trench isolation (STI)_structure. Typically, STI structures are_formed_on_the semiconductor wafers by forming trenches in the wafer and_filling such_trenches with an_insulating material, such as silicon dioxide.
The manufacturing tools within a_semiconductor manufacturing facility typically communicate with a_manufacturing framework or a network of processing modules. Each, manufacturing toot_is generally connected to an equipment interface. The_equipment interface is connected to a machine_interface to which a_manufacturing_network is connected, thereby facilitating communications between_the_manufacturing_tool_and the manufacturing_framework. The machine_interface can generally_be part_of an advanced_process control_(