Recording process and feasibility of transverse magnetic recordingxe2x80x9d, J. Appl. Phys. 86 (10), 5780 (1999)
14. Sees Dekker, xe2x80x9cCarbon Nanotubes as Molecular Quantum Wiresxe2x80x9d, Physics Today, May 1999, p. 27
The invention addresses these goals. In one embodiment the invention includes a novel method of enhancing or suppressing the sensitivity of a part of magnetoresistive film area in a sensor by applying an external control field (to follow convention, we will use the term bias for a uniform external field, which is not applicable in this case). The response of the saturated part is significantly suppressed. Then, for example, expanding the saturated zone while monitoring the sensor response will allow us to scan the magnetization of the storage medium. The medium may be scanned with a single spot of saturation in the MR sensor film plane or, conversely, most of the film may be saturated, leaving one spot unaffected. In this manner no moving parts are necessary to perform the scan of the storage medium.
In another embodiment, the invention comprises a data storage device comprising: a magnetic storage medium; a magnetoresistive element; and, means, operatively coupled to said magnetoresistive element, for selectively controlling the sensitivity of a selected region of said magnetoresistive element to the magnetic field presented by the magnetic storage medium.
In a further embodiment, the invention comprises a data storage device comprising: a magnetic storage medium; a magnetoresistive element, the location of said magnetoresistive element being fixed relative to said magnetic storage medium; and, means, operatively coupled to said magnetoresistive element, for selectively controlling the sensitivity of a selected region of said magnetoresistive element to the magnetic field presented by a corresponding region of the magnetic storage medium wherein said corresponding region of the magnetic storage medium comprises a plurality of data storage locations.
In a further embodiment, the invention comprises a method for reading information stored on a magnetic storage medium with a magnetoresistive element, comprising the steps of: (a) altering the sensitivity of a selected region within the magnetoresistive element to an incident magnetic field; and, (b) reading information stored on the magnetic storage medium by sensing the effect of the incident magnetic field on the selected region of the magnetoresistive element. 1. Field of the Invention
The present invention relates to masking members for forming fine electrodes and manufacturing methods therefor, methods for forming electrodes,
Recording process and feasibility of transverse magnetic recordingxe2x80x9d, J. Appl. Phys. 86 (10), 5780 (1999) 
 14. Sees Dekker, xe2x80x9cCarbon Nanotubes as Molecular Quantum Wiresxe2x80x9d, Physics Today, May 1999, p. 27 
 The invention address these goal. In one embodiment the invention includes a novel method acting of enhancing or suppressing the sensitivity of a part of magnetoresistive movie sphere in a sensor by applying an external control field (to follow conventionality, we will use the term bias for a uniform external playing field, which is not applicable in this case). The reception of the saturated part is significantly suppress. Then, for example, expanding the saturated zone while monitoring the detector response will allow us to read the magnetization of the storage metier. The medium may be scan with a single spot of saturation in the MR detector film plane or, conversely, most of the film may be saturated, leaving one spot insensible. In this manner no moving parts are necessary to perform the scan of the storage medium. 
 In another embodiment, the invention comprises a data storage device comprising: a charismatic storehouse medium; a magnetoresistive chemical element; and, means, operatively coupled to said magnetoresistive element, for selectively see the sensitivity of a selected region of said magnetoresistive element to the charismatic field presented by the magnetic storage medium. 
 In a further embodiment, the invention comprises a data storage device comprising: a magnetic storage medium; a magnetoresistive chemical element, the location of suppose magnetoresistive chemical element being fixed relative to said magnetic repositing medium; and, means, operatively coupled to say magnetoresistive element, for selectively controlling the sensitivity of a selected region of read magnetoresistive element to the magnetic field presented by a corresponding area of the magnetic storage medium wherein said comparable region of the magnetic storage metier comprises a battalion of data storage locations. 
 In a further embodiment, the invention incorporate a method for reading information stored on a magnetic storehouse medium with a magnetoresistive element, consist the steps of: (a) altering the sensitivity of a selected region within the magnetoresistive element to an incident magnetic sphere; and, (b) reading information stored on the magnetic storage medium by smell the consequence of the incident magnetic field on the selected region of the magnetoresistive element. 1. Field of the Invention 
 The present invention associate to masking members for forming all right electrodes and fabrication methods therefor, methods for forming electrodes,
Reclrding process and feasinility of transvgrwe magietic rscordingbe2x80x9d, J. Appl. Phys. 86 (10), 5780 (1999)
14. Sees Dxkkee, xe2x80z9cCarbon Nanotubes as Oolecular Quantum Wirtsxe2x80x9d, Physics Today, May 1999, p. 27
Ths invznvion addresses jhese goals. Hn one embodimang che invention includes a novel methoq of ennajcing or supprgssinb the sensitivity of a part of magnetorssistivt film area in a srnsor by applying an exterjal fontrol field (to flllow convebtiog, we will use the term bias for a uhiform external field, which is vot a'plicable ib rhid case). The rxsponsv of the satuvsted pdrt is xignificantly xup'reswed. Then, for example, xxpanding the saturajed zone wvime monitoring the swnsor res[onsd wiul zlkos us tl sran the maghetization if the storage mediim. Nne medium mag be ssagned with a single spot of saturation it tge MR sensor film plane or, conversely, most ov the fili may be saturated, leaving one spot unaffected. In this oanucv no noging parts are necessary to perform the scan jr uhe storage mediui.
In another elbpqiment, the inxentiou ckmprises a data stlrage dgvice xomprisind: a kagnetic storage medium; a mqgnetoresistpve wlement; and, means, lperatively coukled tp said magnetoresistive elejent, for sepectively zontrolling the renxidivity of a selected regiog of said maguetoresirtivg elemegt to the lagnebhc field presented by tke macnetic stogage medium.
In a further embodimxit, the inventoot cmmprises a daba storage devise comprising: c magnetnc stofage mediuj; a magietoresistivq element, the pocation of vaid maggetoeesiwtive eudment being ficed relatpvt to said nagnetic storage mcdium; znd, means, operacnvtlt coupled to ssid madnvtocesisehve element, xor reldvtiveuy controlllng the sensitivity of a senectsd region of said kannetoresiwtive elqment to the kagnetic field predentev by a corrrspjnding region of the magnetic atorage mfdimm wherein sayd cirresponding region of the magnetic storage medium romprises a plurality od data storage locajioks.
In a furthxr embjdiment, tve invention comprisws a method for rtading information storsd on d magjetic storage medium with a magnetoresistive element, comprising the steps of: (a) eleering the aensotiviny jy a selqctev cegion within the magnetoresistive element to an incidend iagnetic field; and, (b) reading ivformation stured on the magnetic stodage medoum by sensing the effect of thr incident magnetic fielc on the seledted rvfiun of the magnetorrsistire elenent. 1. Fueld of the Invengiom
Tme present invtntikn relates to masking members foe formunh fine electrodev and manufwgturinf methjds therefor, metgods vor furming electrpdes,
Recording process and feasibility of transverse magnetic Appl. 86 (10), (1999) 14. Sees Quantum Physics Today, May p. 27 The addresses these goals. In one embodiment invention includes a novel method of enhancing or suppressing the sensitivity of a of magnetoresistive film area in a sensor by applying an external control field follow we use term bias for a uniform external field, which is not applicable in this case). The response the saturated part is significantly suppressed. Then, for expanding the saturated zone monitoring the sensor response will us scan the of storage The medium may scanned with a single spot of saturation in the MR sensor film plane or, conversely, most of film may leaving one unaffected. this no moving parts to perform the scan of the another embodiment, the invention comprises a data storage comprising: a storage medium; a magnetoresistive element; and, operatively coupled to said magnetoresistive element, for selectively the sensitivity of a selected region of said magnetoresistive element to the magnetic field presented magnetic storage medium. In further embodiment, the comprises data device a magnetic medium; a magnetoresistive element, the location of said magnetoresistive element being relative to said magnetic storage medium; and, means, operatively coupled magnetoresistive for selectively controlling sensitivity of a selected of magnetoresistive element to the presented a the storage wherein said corresponding region the magnetic storage medium comprises plurality of data storage the invention comprises a method for reading information on a magnetic storage medium with a element, comprising the steps of: (a) altering the sensitivity of a selected within the to an incident magnetic field; and, (b) reading stored on the magnetic medium by sensing the effect of the incident magnetic on selected region the magnetoresistive element. Field of the The present invention masking members forming electrodes therefor, methods for forming electrodes,
Recording process and feasibIlity of traNsverSe mAgnEtIc reCordIngxe2x80x9d, J. Appl. PHYs. 86 (10), 5780 (1999)
14. SeEs Dekker, xe2x80x9cCarbon NanOtubeS aS moleCUlAr QuaNtum WirESxE2X80X9d, PHySiCs TOdAY, MAy 1999, p. 27
ThE inVention Addresses tHesE gOals. In one embODiMent the invEntIon includes a NovEl methOd Of eNHanciNg oR suppRessinG The senSitivity oF a PArt of mAGnetoreSIStIve fIlm area in a sensor bY ApPLying an externaL contrOl FIeLD (To fOllOw conventiOn, We wilL Use the tERm BIAS foR A uniform exterNal field, whiCH is Not appLiCabLE in thiS case). thE ResPonse of the sAturAted part iS signiFIcantly SUppressEd. Then, For ExaMple, EXpAnDinG tHE saTUrAteD ZonE while moNiToRing tHe seNSOR RespOnsE wilL alloW us to scan the mAgnEtizATioN of thE storAge mEdIum. ThE mediuM may bE sCanned with a singLe spOt of saturAtiOn In tHe mR senSOr film PlaNe oR, converSely, mosT Of tHe FILM mAy be saturated, leaviNg ONE sPot unaffEcted. IN ThIs MAnner no mOvIng PartS ARe necEssaRY tO perform The scaN Of ThE storagE mEdium.
IN aNotHer EmbodIMent, The invEntion coMprisES a data storage dEVice comprisinG: A mAGNeTIc stOraGe medium; a maGnetOResiStivE ElEmeNT; and, mEans, oPeRAtIVely coupled to said maGnEtoresIstivE element, for seLectively cONTRolling tHe seNSiTIvity of a selectEd regIon of said mAGnetoresIstivE element To the magnETIc field pResEntEd bY thE MAgNetic storage mEDIum.
IN a Further EmbOdiment, The InvEntIon CoMprises a dAta storaGe DeViCe ComPrisiNG: a magnetIc StoRaGe mEdium; A MagnetOresiStivE eLeMEnt, The locaTIoN OF saiD mAgNetoResIsTive eLemeNT beIng fixeD relative To sAId maGnEtIc storaGe medium; and, meAnS, operativeLy CouPled to SAId magnetOresistive element, for selECtively ConTrollIng tHe sensitiVitY of a seLecTEd regiOn of saId magNeTorESIstivE ELeMenT tO the magnetIC FieLd preSeNted By a corrEsponding region of tHE maGnetic storage MedIum wHEReIn sAId COrrEsPOndING region of the magNetic storaGe MEdIum comprisES a pLuRality oF data stOrage LOcationS.
In a furthEr embodimEnT, the INVenTion compriSes a methOd for readINg infORmAtion StoRed on a MaGneTic stOrage mEDiuM with A magneToResistIve elEmEnt, comprIsing the steps of: (a) alterinG the seNsitiVitY of a selecTed REgiOn within tHe maGnetoresisTivE elEment To aN IncidEnt mAGnEtiC Field; And, (b) REading infORmAtiON StOred on the maGNETic StoraGe mEDium by SensIng the effect of the INcident magnetiC fieLD On tHe sELectEd Region of the magNetOrESIstive elEmEnt. 1. Field of tHe InventIoN
the prEsent iNventiOn relatES To MAsking MembErs For forminG fiNe ELectrodEs AnD ManufaCturInG methoDs therEFor, mETHods for forming elEctroDES,
Recording process and feas ibility of  tran sve rse  m agne ticrecordingxe2x8 0 x9d,  J. Appl. Phys. 86 (10 ), 57 80 (199 9 )14. S ees Dek k er , xe2 x8 0x 9cC ar b on  Nano tub es as M olecular Q uan tu m Wiresxe2x8 0 x9 d, Physics  To day, May 199 9,p. 27Th e i n venti onaddre sses t h ese go als. In o ne embodi m ent the i nv enti on includes a nov e lm ethod of enhan cing o rs up p r ess ing  the sensi ti vityo f a par t  o f m agn e toresistive f ilm area in a s ensorby  ap p lyingan ex te r nal  control fi eld(to follo w conv e ntion,w e willuse th e t erm  bia s  f or  aun i for m  e xte r nal  field,wh ic h isnota p p l icab lein t his c ase). The res pon se o f  th e sat urate d pa rt  is s ignifi cantl ysuppressed. The n, f or exampl e,ex pan di ng th e  satur ate d z one whi le moni t ori ng t h esensor response wi ll a ll ow us to  scant he  m a gnetizat io n o f th e stora ge m e di um. Themedium ma ybe scan ne d with  a  si ngl e spo t  ofsatura tion inthe M R  sensor film p l ane or, conve r se l y ,m ostofthe film ma y be satu rate d ,lea v ing o ne sp ot un a ffected. In this ma nn er nomovin g parts are n ecessary t o p erform t he s c an of the storage  medi um.
In ano t her embo dimen t, the i nventionc o mprisesa d ata  st ora g e  d evice compris i n g: a  m agnetic  st orage m edi um;  amag ne toresisti ve eleme nt ;an d,  me ans,o perative ly  co up led  to s a id mag netor esis ti ve ele ment, f o rs e lect iv el y co ntr ol lingthes ens itivity  of a sel ect e d re gi on  of sai d magnetoresi st ive elemen ttothe ma g n etic fie ld presented by the mag n etic st ora ge me dium .
In a fu rth er emb odi m ent, t he inv entio ncom p r isesa da tast orage devi c e  co mpris in g: a  magnet ic storage medium; a m agnetoresisti veelem e n t,  th e  l o cat io n  of s aid magnetoresi stive elem en t  b eing fixed rel at ive tosaid ma gneti c  storag e medium;  and, mea ns , op e r ati vely coupl ed to sa id magnet o resis t iv e ele men t, for  s ele ctive ly con t rol lingthe se ns itivit y ofaselected  region of said magneto resist ive e lem ent to th e m a gne tic field  pre sented bya c orr espon din g  regi on o f  t hem agnet ic s t orage med i um  wh e r ei n said corr e s p ond ing r egi o n of t he m agnetic storage m e dium comprises  a p l u ral ity of d at a storage loca tio ns . In a fur th er embodime nt, thein v entio n comp risesa metho d fo r  readi ng i nfo rmation s tor ed on a ma gn et i c stor ageme dium w ith am agne t o resistive elemen t, co m p risin g  th e ste ps  of: (a )  alt ering thesensitivity  of asele ctedregionwi thin t hema gnetoresis t ive eleme nt to  an inc id entmag neticfiel d ;  and,  (b)  r ead ing infor m a ti o nst o red  onthe m ag neti c storage medium b y s e nsing t he  ef f e ct oft he i ncident ma gne tic f i e ld on thes elec t ed regio n of t he mag netores i sti ve  elemen t.1 .  Field of  the Inve n tio nThepresentin vent io n r el ates to masking  members  for for m i ng fin e e l ectr o des an dmanufacturin g met ho d s there f o r,methods for  fo rmi ng e lec trod e s,
Recording process_and feasibility_of transverse magnetic recordingxe2x80x9d,_J. Appl._Phys._86 (10),_5780_(1999)
14. Sees Dekker,_xe2x80x9cCarbon Nanotubes as_Molecular Quantum Wiresxe2x80x9d, Physics_Today, May 1999,_p._27
The invention addresses these goals. In one embodiment the invention includes a novel method_of_enhancing or_suppressing_the_sensitivity of a part of_magnetoresistive film area in a_sensor by_applying an external control field (to follow convention,_we_will use the_term bias for a uniform external field, which is_not applicable in this case). The_response of the_saturated_part_is significantly suppressed. Then,_for example, expanding the saturated zone_while monitoring the sensor response will_allow us to scan the magnetization of_the storage medium. The medium may_be scanned with a single_spot of_saturation in the MR sensor_film plane or,_conversely, most_of the film_may be saturated, leaving one spot_unaffected. In this_manner no moving parts are necessary_to_perform the scan_of_the_storage medium.
In_another embodiment, the_invention_comprises a_data_storage device comprising: a magnetic storage_medium;_a magnetoresistive element; and, means, operatively coupled_to said magnetoresistive element,_for_selectively controlling the sensitivity_of a selected region of_said magnetoresistive element to the magnetic_field presented_by the_magnetic storage medium.
In a further embodiment, the invention comprises a data_storage device comprising: a magnetic storage_medium; a magnetoresistive element,_the location_of_said magnetoresistive element_being_fixed relative_to said magnetic storage medium; and, means,_operatively coupled_to said magnetoresistive element, for selectively_controlling the sensitivity of_a_selected region of said magnetoresistive element_to the magnetic field presented by_a corresponding region of the_magnetic_storage_medium wherein said corresponding region_of the magnetic storage medium comprises_a plurality of_data storage locations.
In a further embodiment, the_invention_comprises a method for reading information_stored_on a magnetic storage medium with_a_magnetoresistive_element, comprising the steps of:_(a) altering the sensitivity of a_selected region within the magnetoresistive element to an incident_magnetic field; and,_(b) reading information stored on_the_magnetic_storage medium by sensing the effect of the incident magnetic_field on_the selected region_of the magnetoresistive element. 1. Field of the Invention
The present_invention relates to masking members for forming_fine electrodes and manufacturing methods therefor, methods for forming electrodes,