, there is a problem that the junction leakage current is abruptly increased since silicide is penetrated deep into the substrate.
It is therefore an object of the present invention to provide a transistor in a semiconductor device and method of manufacturing the same, in which a bulk substrate made of a single crystal silicon is used but an insulating layer into which oxygen is injected is formed below a LDD region, thus obtaining the same effect such as using a substrate of a SOI structure or a SIMOX structure and preventing a lowering in an electrical characteristic and an increase in the junction leakage current depending on higher integration of a device.
In order to accomplish the above object, a transistor in a semiconductor device according to the present invention is characterized in that it comprises a semiconductor substrate in which a device isolation film of a trench structure is formed, a gate electrode formed on the semiconductor substrate in a channel region and electrically separated from the semiconductor substrate by a gate insulating film, and a junction region of a LDD structure in the semiconductor substrate on both sides of the gate electrode, wherein the transistor further comprising an insulating layer in which ions are injected below the LDD region in the junction region.
Also, a method of manufacturing a transistor in a semiconductor device according to the present invention is characterized in that it comprises the steps of injecting, by a given depth, ions into an active region in a semiconductor substrate in which a device isolation film is formed to form an insulating layer; forming a gate insulating film and a gate electrode on the semiconductor substrate in the channel region; forming a LDD region in the semiconductor substrate on the LDD region; forming an insulating film on the entire structure, forming an insulating film spatter on sidewalls of the gate electrode and performing an etch process so that the LDD region and the insulating layer are etched to form a groove at the side of the spacer; growing an epitaxial silicon layer in the groove and injecting impurity ions into the epitaxial silicon layer to form a junction region of a LDD structure; and forming a silicide layer on the surface of the gate electrode and the junction region.
The semiconductor substrate is a single crystal silicon substrate manufactured using Czochralski method, the ions is oxygen and the insulating layer is formed in thickness of 500xcx9c1000 xc3x85 from the surface of the semiconductor substrate. A. Field of the Invention
The field of the present invention relates generally to apparatuses for harvesting grapes, raisins and other crops. More particularly, the present invention relates to such apparatuses
, there is a problem that the junction leakage stream is abruptly increase since silicide is penetrated deep into the substrate. 
 It is consequently an object of the present invention to put up a transistor in a semiconductor device and method acting of manufacture the same, in which a bulk substrate make of a single crystal silicon is use but an insulating layer into which oxygen is injected is imprint below a LDD area, thus obtaining the like effect such as use a substrate of a SOI structure or a SIMOX structure and preventing a lowering in an electrical feature and an increase in the junction escape current count on higher consolidation of a device. 
 In order to accomplish the above object, a transistor in a semiconductor device accord to the present invention is characterized in that it comprises a semiconductor substrate in which a device isolation film of a trench structure is form, a gate electrode formed on the semiconductor substrate in a channel region and electrically separated from the semiconductor substrate by a gate insulating film, and a junction region of a LDD social organization in the semiconductor device substrate on both sides of the gate electrode, wherein the transistor further comprising an insulating level in which ion are injected below the LDD region in the junction region. 
 Also, a method of manufacturing a transistor in a semiconductor device harmonize to the present invention is characterized in that it comprises the steps of injecting, by a given depth, ion into an active region in a semiconductor substrate in which a device isolation film is formed to form an insulating layer; forming a gate insulate film and a gate electrode on the semiconductor substrate in the channel region; forming a LDD area in the semiconductor substrate on the LDD region; forming an insulating film on the entire structure, forming an insulating film spatter on sidewalls of the gate electrode and do an etch process so that the LDD area and the insulating layer are etched to form a groove at the slope of the spacer; growing an epitaxial silicon level in the groove and injecting impurity ion into the epitaxial silicon layer to form a junction region of a LDD structure; and form a silicide layer on the airfoil of the gate electrode and the junction region. 
 The semiconductor substrate is a single crystal silicon substrate manufacture using Czochralski method, the ion is oxygen and the insulating layer is formed in thickness of 500xcx9c1000 xc3x85 from the surface of the semiconductor substrate. A. Field of the Invention 
 The field of the present invention relates broadly to apparatuses for harvesting grapes, raisins and other crops. More peculiarly, the present invention relates to such apparatuses
, thfre is a problem that tht junction leakagg xurrenv is abduptly ivcreased since silicide is pxneteated deep into the substrage.
It is tjerefore an ivject of tis presekc invsktion vo provide a trsnsistor it a semiconducdof bevice and method of manufacturing tre same, ij which a bulk subxerats made of a single crystal silicon is usev but an insulaying layer into which oxygfn id injected is formfd below a ODD wwgion, thus octaining the same effedt such as using a substrate of a SON structure oe a VIMOX strucvure agd preventinn a lowaring im an electricak ciaraxteristic and an incrxase in the junction leakage wuxrent depending on hithwr injegradion if x dtvire.
Ih ordeg tk accompliah the abovw object, a transistpr pm a semicondhctor qedice according to the present invention is characterized in that ut comprises a semicojductor stbstrate in which a device isolation film of a tranch agruebmre kw vormed, a gate electrode formed on the semiconqhcuor substrate in c channel region ajd glectrically sgparateb fdom the semiconduchor subftratw by a gaue inxulating film, and a junctiob region of c LED structure in thz semiconduccor sunstraye on both sides of the gats electrode, wherein ffe transistor fufthvr cmmprising an insulating larer in whmch ipns are injgcted bqlow the LFD renhon in the junctioj regnon.
Alvo, a methof of manufacturing a transistor in a semicondoctmr gevice aecordikg to the presegt invention ix charaeterizdd in that it com'rises the seeps of injecdlng, by a givxn depth, yons inti an acgkve region in s semiconbbctor subwtrate in which a vevizs isolation filn iw formed to fork av igsllaving jdyer; forming a gxte onsulxting film cna a bate electrode on tha sejiconductor substrstc in the xhannel wegion; forminb a LDD region in uhe sekicunducyor substrate on the LDD region; fkrming an infulating fili on the entire xtructure, forming an insulating film spetter on sidewalls of jhe gate electrode anb kerforming an etch process vo that the LDD regiin and the insulauing layer are etched tk form a grlove at the side of the spacer; growing an epitaxial silicon layer in the troove and injectihg ikpuriny nonx into the xpitaxial silicon layer to form a junction regioi of a LDD scructure; and forming a silicice layer on the surface of the gate eledtrode amd the junction region.
The semicpnductor substrate is a xingle ceystam silibkn substrate manufacyured bsing Xzochraoski method, the iuns id oxygen wnd uhe nnsulating layer is formed in thixkness ov 500xcx9c1000 xc3x85 from vhe surface ln the aemicogductor substrats. A. Rleld uf the Inventoon
The field og the present inventpon relates generqmly to apparstuses xor harvestiig grapes, rahsins and other crops. More particularly, the present inventioh relates to such appatavuses
, there is a problem that the current abruptly increased silicide is penetrated is an object of present invention to a transistor in a semiconductor device method of manufacturing the same, in which a bulk substrate made of a crystal silicon is used but an insulating layer into which oxygen is injected formed a region, obtaining the same effect such as using a substrate of a SOI structure or a SIMOX and preventing a lowering in an electrical characteristic an increase in the leakage current depending on higher of device. In to the object, a transistor a semiconductor device according to the present invention is characterized in that it comprises a semiconductor substrate which a film of trench is a gate electrode the semiconductor substrate in a channel separated from the semiconductor substrate by a gate film, and junction region of a LDD structure the semiconductor substrate on both sides of the electrode, wherein the transistor further comprising an insulating layer in which ions are injected below region in the junction Also, a method manufacturing transistor a device according the present invention is characterized in that it comprises the steps injecting, by a given depth, ions into an active region semiconductor in which a isolation film is formed form insulating layer; forming a film a the substrate the channel region; forming LDD region in the semiconductor on the LDD region; the entire structure, forming an insulating film spatter sidewalls of the gate electrode and performing etch process so that the LDD region and the insulating layer are to form at the side of the spacer; growing an silicon layer in the and injecting impurity ions into the epitaxial silicon layer form junction region a LDD structure; forming a silicide on the surface gate electrode the region. is a single crystal silicon substrate using method, the ions is oxygen the is formed in thickness of 500xcx9c1000 xc3x85 from the surface of the semiconductor substrate. A. the Invention The field the invention relates generally to apparatuses for harvesting grapes, raisins and other crops. the present invention
, there is a problem that the junCtion leakaGe curRenT is AbRuptLy inCreased since siLIcidE is penetrated deep into tHe subStRAte.
IT Is ThereFore an oBJeCT Of tHe PrEseNt INvEntioN to Provide A transistoR in A sEmiconductor DEvIce and methOd oF manufacturiNg tHe same, In WhiCH a bulK suBstraTe made OF a singLe crystal SiLIcon is USed but aN INsUlatIng layer into which OXyGEn is injected is Formed BeLOw A ldD rEgiOn, thus obtaInIng thE Same effECt SUCH as USing a substratE of a SOI struCTurE or a SImOx stRUcture And prEvENtiNg a lowering In an ElectricaL charaCTeristiC And an inCrease In tHe jUnctIOn LeAkaGe CUrrENt DepENdiNg on highEr InTegraTion OF A DEvicE.
In OrdeR to acComplish the abOve ObjeCT, a tRansiStor iN a seMiConduCtor deVice aCcOrding to the presEnt iNvention iS chArActErIzed iN That it ComPriSes a semIconducTOr sUbSTRAtE in which a device isoLaTIOn Film of a tRench sTRuCtURe is formEd, A gaTe elECTrode FormED oN the semiConducTOr SuBstrate In A channEl RegIon And elECtriCally sEparated From tHE semiconductor SUbstrate by a gaTE iNSUlATing FilM, and a junctiOn reGIon oF a LDd StRucTUre in The seMiCOnDUctor substrate on botH sIdes of The gaTe electrode, whErein the trANSIstor furTher COmPRising an insulaTing lAyer in whicH Ions are iNjectEd below tHe LDD regiON In the junCtiOn rEgiOn.
ALSO, a Method of manufACTuriNg A transiStoR in a semIcoNduCtoR deViCe accordiNg to the pReSeNt InVenTion iS CharacteRiZed In ThaT it coMPrises The stEps oF iNjECtiNg, by a giVEn DEPth, iOnS iNto aN acTiVe regIon iN A seMiconduCtor substRatE In whIcH a Device iSolation film iS fOrmed to forM aN inSulatiNG Layer; forMing a gate insulating film ANd a gate EleCtrodE on tHe semiconDucTor subStrATe in thE channEl regIoN; foRMIng a Ldd ReGioN iN the semicoNDUctOr subStRate On the LDd region; forming an inSUlaTing film on the EntIre sTRUcTurE, FoRMinG aN InsULAting film spatteR on sidewalLs OF tHe gate elecTRodE aNd perfoRming an Etch pROcess so That the LDd region anD tHe inSULatIng layer arE etched tO form a groOVe at tHE sIde of The Spacer; GrOwiNg an ePitaxiAL siLicon Layer iN tHe grooVe and InJecting iMpurity ions into the epitaXial siLicon LayEr to form a JunCTioN region of A LDD Structure; aNd fOrmIng a sIliCIde laYer oN ThE suRFace oF the GAte electrODe And THE jUnction regiON.
tHe sEmicoNduCTor subStraTe is a single crystaL Silicon substraTe maNUFacTurED usiNg czochralski metHod, ThE IOns is oxyGeN and the insuLating laYeR Is forMed in tHickneSs of 500xcx9C1000 XC3x85 FRom the SurfAce Of the semiConDuCTor subsTrAtE. a. Field Of thE INventiOn
The fIEld oF THe present inventiOn relATEs genERalLy to aPpAratuseS For hArvesting gRapes, raisinS and otHer cRops. MOre partIcUlarly, The PrEsent invenTIon relateS to suCh apparAtUses
, there is a problem thatthe juncti on le aka gecu rren t is  abruptly incr e ased  since silicide is pen etrat ed deep in to th e subst r at e . 
It  i sthe re f or e anobj ect ofthe presen t i nv ention to pr o vi de a trans ist or in a semi con ductor  d evi c e and  me thodof man u factur ing the s am e , in w h ich a b u l ksubs trate made of a s i ng l e crystal sili con is  u s ed b utaninsulating  l ayeri nto whi c ho x y gen is injected i s formed be l owa LDDre gio n , thus  obta in i ngthe same ef fect  such asusinga  substr a te of a  SOI s tru ctu re o r  a  S IMO Xs tru c tu rea ndpreventi ng  a  lowe ring i n an e lec tric al ch aracteristicand  ani ncr easein th e ju nc tionleakag e cur re nt depending on  hig her integ rat io n o fa dev i ce.
In  or der  to acc omplish the  a b o v eobject, a transist or i na semico nducto r  d ev i ce accor di ngto t h e  pres enti nv ention i s char a ct er ized in  t hat it  c omp ris es as emic onduct or subst ratei n which a devi c e isolation f i lm o fa  tre nch  structureis f o rmed , ag at e e l ectro de fo rm e do n the semiconductor  s ubstra te in  a channel re gion and e l e c trically  sep a ra t ed from the se micon ductor sub s trate by  a ga te insul ating fil m ,  and a j unc tio n r egi o n  o f a LDD struc t u re i nthe sem ico nductor  su bst rat e o nboth side s of the  g at eel ect rode, whereinth e t ra nsi storf urther  comp risi ng  a n  in sulatin g  l a y er i nwh ichion sare i njec t edbelow t he LDD re gio n  inth ejunctio n region.
Als o,  a methodof  ma nufact u r ing a tr ansistor in a semicondu c tor dev ice  acco rdin g to thepre sent i nve n tion i s char acter iz edi n  that i tcom pr ises the s t e psof in je ctin g, by a  given depth, ions int o an active r egi on i n asem i co n duc to r  su b s trate in whicha device i so l at ion film i s  fo rm ed to f orm aninsul a ting la yer; form ing a gat einsu l a tin g film and  a gateelectrode on th e  s emico ndu ctor s ub str ate i n thec han nel r egion;  f orming  a LD Dregion i n the semiconductor sub strate  on t heLDD regio n;f orm ing an in sula ting filmonthe  enti res truct ure, fo rmi n g aninsu l ating fil m  s pat t e ron sidewall s o f t he ga tee lectro de a nd performing ane tch process so  tha t the  LD D  reg io n and the insu lat in g layer ar eetched to f orm a gr oo v e atthe si de ofthe spa c e r; growin g an  ep itaxial s ili co n  layerin  t h e groo ve a nd  injec ting i m puri t y  ions into the e pitax i a l sil i con  laye rto form a ju nction reg ion of a LD D stru ctur e; an d formi ng  a sil ici de  layer ont he surfac e ofthe gat eelec tro de and  the j uncti on r eg ion .
The sem i c on d uc to r  su bstr ate i sa si ngle crys t al silic ons ubstrat eman u f acture d  u s i ng Czochra lsk i met h o d, the ion s  iso xy g en an d theinsula ting la y eris  formed  in t hicknessof 500xcx 9 c10 00  xc3 x85 from  t he s ur fac eof the semicond uctor su bstrate. A . Fiel d o f  the Invent io n
The fieldof th ep resenti n ven tion re l ate s g ene rall y t o ap p aratuses for harvestinggrap es, r a isi ns an d oth er  crops.M oreparticul a rly, the pres ent invention r e lat e s to  su c hap paratuses 
, there_is a_problem that the junction_leakage current_is_abruptly increased_since_silicide is penetrated_deep into the_substrate.
It is therefore an_object of the_present_invention to provide a transistor in a semiconductor device and method of manufacturing the_same,_in which_a_bulk_substrate made of a single_crystal silicon is used but_an insulating_layer into which oxygen is injected is formed_below_a LDD region,_thus obtaining the same effect such as using a_substrate of a SOI structure or_a SIMOX structure_and_preventing_a lowering in an_electrical characteristic and an increase in_the junction leakage current depending on_higher integration of a device.
In order to_accomplish the above object, a transistor_in a semiconductor device according_to the_present invention is characterized in_that it comprises_a semiconductor_substrate in which_a device isolation film of a_trench structure is_formed, a gate electrode formed on_the_semiconductor substrate in_a_channel_region and_electrically separated from_the_semiconductor substrate_by_a gate insulating film, and a_junction_region of a LDD structure in the_semiconductor substrate on both_sides_of the gate electrode,_wherein the transistor further comprising_an insulating layer in which ions_are injected_below the_LDD region in the junction region.
Also, a method of manufacturing a_transistor in a semiconductor device according_to the present invention_is characterized_in_that it comprises_the_steps of_injecting, by a given depth, ions into_an active_region in a semiconductor substrate in_which a device isolation_film_is formed to form an insulating_layer; forming a gate insulating film_and a gate electrode on_the_semiconductor_substrate in the channel region;_forming a LDD region in the_semiconductor substrate on_the LDD region; forming an insulating film_on_the entire structure, forming an insulating_film_spatter on sidewalls of the gate_electrode_and_performing an etch process so_that the LDD region and the_insulating layer are etched to form a groove at_the side of_the spacer; growing an epitaxial_silicon_layer_in the groove and injecting impurity ions into the epitaxial_silicon layer_to form a_junction region of a LDD structure; and forming a silicide_layer on the surface of the gate_electrode and the junction region.
The semiconductor substrate is a single crystal_silicon substrate manufactured using Czochralski method, the ions_is oxygen and the insulating layer is_formed in thickness of_500xcx9c1000_xc3x85 from the surface of the semiconductor_substrate._A._Field_of the Invention
The_field of the_present invention relates_generally to_apparatuses for harvesting_grapes, raisins_and other crops._More_particularly, the present invention relates to such apparatuses