 installation. Current Information Technology (IT) environment utilize many techniques to authenticate a user, such as, for example, using proximity cards, RFID cards, ID/Passwords, various biometric information, Smart cards, RSA tokens, and in some cases advanced methods like IRIS recognition, face detection, and voice recognition. The current methods may create a secure system but also has limitations and add burden on the user to remember and/or save secure information like PINs, passwords, challenge questions, and/or pictures. They are also vulnerable to issues like biometric information compromised, stolen cards, human errors, and passwords lacking security. The advanced solutions can impose additional burdens on the user and/or becomes more expensive due to lack of coordination of the backend systems or unified IT environment solutions.
Accordingly, there is need for an intelligent system that is not only effective but adaptive to meet the security requirements of ever changing complex IT requirements, Enterprise IP protection, Productive user environment and other advanced enterpriser IT situations. In accordance with an exemplary embodiment, a system and method are disclosed, which can solve these issues with an intelligent and advanced system. The present application relates to semiconductor processing; more particularly, to a method of forming a template for the directed self-assembly (DSA) of block copolymers (BCPs) especially in the context of graphoepitaxcy DSA.
Directed self-assembly refers to the integration of block copolymer materials that undergo phase or domain separation with traditional semiconductor manufacturing processes. With DSA, nanoscale dimensions are achievable with dramatically reduced cost using novel material designs without the need for additional equipment upgrades. In order to form vertically oriented line-space patterns with block copolymer domains, a neutral layer must be present at the bottom of the block copolymer layer.
Whereas in DSA the sidewalls of the vertically oriented line-space pattern must have a preference for one polymer block over the other, e.g. via surface chemistry, in order to provide the impetus to properly align the DSA lines, the neutral layer should not. That is, the neutral layer must not show a strong wetting affinity for one of the polymer blocks over the other. The matter of neutrality is further complicated in graphoepitaxy uses inasmuch as the neutral layer must remain neutral after any processing prior to directed self-assembly, e.g. resist development and etch. Moreover, the neutral layer must be stable and remain neutral for a range of thicknesses and deposition conditions. Conventional neutral layers include polymers that
installation. Current Information Technology (IT) environment utilize many techniques to authenticate a user, such as, for case, use proximity cards, RFID cards, ID / Passwords, various biometric data, Smart cards, RSA tokens, and in some cases advance method acting like IRIS recognition, expression detection, and voice realization. The current methods may create a secure system but besides has limitations and lend burden on the user to commend and/or save secure information like personal identification number, passwords, challenge questions, and/or pictures. They are also vulnerable to issue like biometric information compromised, stolen cards, human errors, and password lacking security. The advanced solutions can impose additional effect on the user and/or becomes more expensive due to lack of coordination of the backend systems or unified IT environment solutions. 
 Accordingly, there is need for an intelligent system that is not merely effective but adaptive to meet the security prerequisite of ever changing complex IT requirements, Enterprise IP protection, generative user environment and other advanced enterpriser IT position. In accordance with an exemplary embodiment, a system and method acting are disclosed, which can solve these issues with an intelligent and advanced system. The present application relate to semiconductor processing; more particularly, to a method of forming a template for the directed self - assembly (DSA) of blocking copolymers (BCPs) especially in the context of graphoepitaxcy DSA. 
 Directed self - assembly refers to the integration of block copolymer materials that undergo phase or world separation with traditional semiconductor fabrication processes. With DSA, nanoscale dimensions are achievable with dramatically reduced monetary value using fresh material designs without the need for extra equipment upgrades. In order to form vertically oriented line - space patterns with block copolymer domains, a neutral layer must be present at the bottom of the pulley copolymer layer. 
 Whereas in DSA the sidewalls of the vertically orient line - space pattern must have a preference for one polymer block over the early, e.g. via surface chemistry, in order to provide the impetus to properly align the DSA lines, the neutral level should not. That is, the neutral layer must not show a strong wetting affinity for one of the polymer blocks over the other. The matter of disinterest is further complicated in graphoepitaxy uses inasmuch as the neutral layer must remain neutral after any processing prior to directed self - assembly, e.g. protest development and etch. Moreover, the neutral level must be stable and remain neutral for a range of thicknesses and deposition conditions. Conventional neutral layers admit polymer that
 indtallation. Current Inforoation Technoloyt (IT) eivironmsnt utilkze many techniques to autheiticqte a user, such as, for examole, using proximiry cerds, RFID cards, MS/Passwovbs, vadlous yiimetric informstion, Smard cards, RSA tonevs, and in some cases advanced methods like ITID recognition, sace qetedniin, and voice recognition. The durrent methods may vreate a secure system but alsl has limitations wnd add bureen jb the user tu remember and/or save aecure information like PINs, parsworbs, challengg sufvtions, and/oc pictlres. They are also vunnerablr to issues lile uiomwtric information com'romised, stolen cardf, human esrkrs, and passwords lqckinc sewurigt. Tfe zdtanded soputmons can imlose additiinal burdens on the ufvt and/or becojes mowe expensive due to lack of coordination mf fhe backend systems or ynified IT environmenj solutionf.
Accordingly, there is need for an intelligent sysdem tiag iw kot ublj effective but adaptive to meet the security deauprements of ever ghanging complex IY geaoirements, Entetprise NL lrotection, Productlve uset envieonment agd oyher advanced enterpriser IR situations. Un accordance with an exemplaxy embpdimemt, a system and method cre diaclosed, whifh can somxe these issues ditm at intelligent and advanced system. Tie przsent apolicstion welates to semigmnductor processinh; morg parthcularly, tl a method of forming a templatx for the dirgctad velf-asseibly (CSA) of block sopolymers (BCPx) especnally kn the connext of gcaphoepitaxcr DSA.
Directed delf-assembly refers eo tye ibtegratkun of block cololymer mcuerials thqt undergo phase ov domxjn separation wnuh urqditional semivonauceog menufasduring procevses. Wign DSA, nanoscale bioensoons are achievable fith dramatically reduveq cost uwing novql material drsigns without the need foc addiyiogal equipment upgrades. In orded to form vevtically oriegted line-space pctterns with block copolymer domains, a nxutral layer must be ptesent at the bottom pn the block ropolyier layer.
Fhereas in DSA the sudewalls of the vtrtically oriented line-apace [attegn must have a preference for one polymer block over the other, e.g. via surdace cieiistry, in odder to pgovnde the iipetns to properly alibn the DSA lines, the neutral laber should njt. That is, the neutral layer mjst not show x strong wetting affinitg for onr of the polymer blocks over thr other. The matter of nemtrality us fudther bkm'licated in graphoepotaxy bses ibasmuch as bhe neutral laher mmst remain neuural after any processing prior to durectee delf-assembly, e.g. cesist devellkment ahd etcr. Moreover, the nsutrzp laygr must be stanle and remain neutral for a range os thicknesses qhd depositiom condinions. Conventmonal neutran layers include polymers that
installation. Current Information Technology (IT) environment utilize to a user, as, for example, ID/Passwords, biometric information, Smart RSA tokens, and some cases advanced methods like IRIS face detection, and voice recognition. The current methods may create a secure system also has limitations and add burden on the user to remember and/or save information PINs, challenge and/or pictures. They are also vulnerable to issues like biometric information compromised, stolen cards, human errors, passwords lacking security. The advanced solutions can impose burdens on the user becomes more expensive due to of of the systems unified environment solutions. Accordingly, is need for an intelligent system that is not only effective but adaptive to meet the security of ever IT requirements, IP Productive environment and other IT situations. In accordance with an system and method are disclosed, which can solve issues with intelligent and advanced system. The present relates to semiconductor processing; more particularly, to a of forming a template for the directed self-assembly (DSA) of block copolymers (BCPs) especially in of graphoepitaxcy DSA. Directed refers to the of copolymer that phase or separation with traditional semiconductor manufacturing processes. With DSA, nanoscale dimensions are with dramatically reduced cost using novel material designs without the additional upgrades. In order form vertically oriented line-space with copolymer domains, a neutral be at the copolymer Whereas in DSA the of the vertically oriented line-space must have a preference the other, e.g. via surface chemistry, in order provide the impetus to properly align the lines, the neutral layer should not. That is, the neutral layer must show a affinity for one of the polymer blocks over other. The matter of is further complicated in graphoepitaxy uses inasmuch as the layer remain neutral any processing prior directed self-assembly, e.g. development and etch. neutral layer be and a range of thicknesses and deposition Conventional layers include polymers that
 installation. Current InformAtion TechnOlogy (iT) eNviRoNmenT utiLize many techniQUes tO authenticate a user, such As, for ExAMple, USiNg proXimity cARdS, rfID CaRdS, ID/paSSwOrds, vAriOus biomEtric inforMatIoN, Smart cards, Rsa tOkens, and in SomE cases advancEd mEthods LiKe IriS recOgnItion, Face deTEction, And voice rEcOGnitioN. the currENT mEthoDs may create a securE SySTem but also has lImitatIoNS aND Add BurDen on the usEr To remEMber and/OR sAVE SecURe information Like PINs, pasSWorDs, chalLeNge QUestioNs, and/Or PIctUres. They are Also VulnerablE to issUEs like bIOmetric InformAtiOn cOmprOMiSeD, stOlEN caRDs, HumAN erRors, and pAsSwOrds lAckiNG SECuriTy. THe adVanceD solutions can ImpOse aDDitIonal BurdeNs on ThE user And/or bEcomeS mOre expensive due To laCk of coordInaTiOn oF tHe bacKEnd sysTemS or Unified iT envirONmeNt SOLUtIons.
Accordingly, theRe IS NeEd for an iNtelliGEnT sYStem that Is Not Only EFFectiVe buT AdAptive to Meet thE SeCuRity reqUiRementS oF evEr cHangiNG comPlex IT RequiremEnts, ENTerprise IP protECtion, ProductiVE uSER eNViroNmeNt and other aDvanCEd enTerpRIsEr It SituaTions. in ACcORdance with an exemplaRy EmbodiMent, a System and methOd are disclOSED, which caN solVE tHEse issues with aN inteLligent and ADvanced sYstem. the preseNt applicaTIOn relateS to SemIcoNduCTOr Processing; morE PArtiCuLarly, to A meThod of fOrmIng A teMplAtE for the diRected seLf-AsSeMbLy (DsA) of bLOck copolYmErs (bCps) eSpeciALly in tHe conText Of GrAPhoEpitaxcY dSa.
dIrecTeD sElf-aSseMbLy refErs tO The IntegraTion of bloCk cOPolyMeR mAterialS that undergo pHaSe or domain SeParAtion wITH traditiOnal semiconductor manufaCTuring pRocEsses. with dSA, nanoscAle DimensIonS Are achIevablE with DrAmaTICally REDuCed CoSt using novEL MatErial DeSignS withouT the need for additioNAl eQuipment upgraDes. in orDER tO foRM vERtiCaLLy oRIEnted line-space pAtterns witH bLOcK copolymer DOmaInS, a neutrAl layer Must bE Present At the bottOm of the blOcK copOLYmeR layer.
WherEas in DSA The sidewaLLs of tHE vErticAllY orienTeD liNe-spaCe pattERn mUst haVe a preFeRence fOr one PoLymer bloCk over the other, e.g. via surfAce cheMistrY, in Order to prOviDE thE impetus tO proPerly align The dSA Lines, The NEutraL layER sHouLD not. THat iS, The neutraL LaYer MUSt Not show a strONG WetTing aFfiNIty for One oF the polymer blocks OVer the other. The MattER Of nEutRAlitY iS further compliCatEd IN GraphoepItAxy uses inasMuch as thE nEUtral Layer mUst remAin neutRAL aFTer any ProcEssIng prior tO diReCTed self-AsSeMBly, e.g. rEsisT dEvelopMent anD Etch. mOReover, the neutral Layer MUSt be sTAblE and rEmAin neutRAl foR a range of tHicknesses aNd depoSitiOn conDitions. coNventiOnaL nEutral layeRS include pOlymeRs that
 installation. Current Inf ormation T echno log y ( IT ) en viro nment utilizem anytechniques to authenti cateau ser, su ch as , for e x am p l e,us in g p ro x im ity c ard s, RFID  cards, ID /Pa ss words, vario u sbiometricinf ormation, Sm art  cards ,RSA token s,and i n some casesadvancedme t hods l i ke IRIS r ec ogni tion, face detect i on ,  and voice rec ogniti on .  T h e  cu rre nt methods  m ay cr e ate a s e cu r e sys t em but also h as limitati o nsand ad dbur d en onthe u se r  to  remember a nd/o r save se cure i n formati o n likePINs,pas swo rds, ch al len ge que s ti ons ,  an d/or pic tu re s. Th ey a r e a lsovul nera ble t o issues like  bi omet r icinfor matio n co mp romis ed, st olenca rds, human erro rs,and passw ord slac ki ng se c urity.  Th e a dvanced  soluti o nsca n i mp ose additional bur de n s  o n the us er and / or  b e comes mo re  ex pens i v e due  tol ac k of coo rdinat i on  o f the b ac kend s ys tem s o r uni f iedIT env ironment  solu t ions.
Accordin g ly, there isn ee d fo r  anint elligent sy stem that  isn ot  on l y eff ectiv eb ut adaptive to meet th esecuri ty re quirements of  ever chan g i n g comple x IT re q uirements, Ent erpri se IP prot e ction, P roduc tive use r environ m e nt and o the r a dva nce d en terpriser ITs i tuat io ns. Inacc ordance  wi thanexe mp lary embo diment,asy st em  an d met h od are d is clo se d,which can so lve t hese  i ss u eswith an in t e llig en tandadv an ced s yste m . T he pres ent appli cat i on r el at es to s emiconductorpr ocessing;mo repartic u l arly, to  a method of forming at emplate  fo r the  dir ected sel f-a ssembl y ( D SA) of  block  copo ly mer s (BCPs ) es pec ia lly in the c ont ext o fgrap hoepita xcy DSA.
Directeds elf -assembly ref ers  tot h eint e gr a tio no f b l o ck copolymer ma terials th at un dergo phas e  or  d omain s eparati on wi t h tradi tional se miconduct or  man u f act uring proc esses. W ith DSA,n anosc a le  dime nsi ons ar each ievab le wit h  dr amati callyre ducedcostus ing nove l material designs with out th e nee d f or additi ona l  eq uipment u pgra des. In or der  to  form  ve r tical ly o r ie nte d  line -spa c e pattern s  w ith b lo ck copolyme r d oma ins,a n e utrallaye r must be present at the bottomof t h e  bl ock copo ly mer layer.
Whe rea si n  DSA the  s idewalls of  the ver ti c allyorient ed lin e-space p at t ern mu st h ave  a prefer enc ef or onepo ly m er blo ck o ve r theother, e.g. v ia surface chemi stry, i n ord e r t o pro vi de thei mpet us to prop erly alignthe DS A li nes,the neu tr al lay ersh ould not.T hat is, t he ne utral l ay er m ust  not s howa stron g we tt ing  affinity f or on eo f t he p olyme rbloc ks over t h e other.  Th e  matter  o f n e u tralit y  i s further co mpl icate d in graphoe p itax y  u s es in asmuch  as th e neutr a l l ay er must  re m a in neutra l after a n y p ro cess ing prio rto d ir ect ed  self-assembly,  e.g. re sist dev e l opment  an d  etc h . More ov er, the neut ral l ay e r mustb e  st able an d  re mai n n eutr alfora  range of thicknesses an d de posit i oncondi tions .Conventi o nalneutrall ayers include  polymers that
 installation._Current Information_Technology (IT) environment utilize_many techniques_to_authenticate a_user,_such as, for_example, using proximity_cards, RFID cards, ID/Passwords,_various biometric information,_Smart_cards, RSA tokens, and in some cases advanced methods like IRIS recognition, face detection,_and_voice recognition._The_current_methods may create a secure_system but also has limitations_and add_burden on the user to remember and/or save_secure_information like PINs,_passwords, challenge questions, and/or pictures. They are also vulnerable_to issues like biometric information compromised,_stolen cards, human_errors,_and_passwords lacking security. The_advanced solutions can impose additional burdens_on the user and/or becomes more_expensive due to lack of coordination of_the backend systems or unified IT_environment solutions.
Accordingly, there is need_for an_intelligent system that is not_only effective but_adaptive to_meet the security_requirements of ever changing complex IT_requirements, Enterprise IP_protection, Productive user environment and other_advanced_enterpriser IT situations._In_accordance_with an_exemplary embodiment, a_system_and method_are_disclosed, which can solve these issues_with_an intelligent and advanced system. The present_application relates to semiconductor_processing;_more particularly, to a_method of forming a template_for the directed self-assembly (DSA) of_block copolymers_(BCPs) especially_in the context of graphoepitaxcy DSA.
Directed self-assembly refers to the integration_of block copolymer materials that undergo_phase or domain separation_with traditional_semiconductor_manufacturing processes. With_DSA,_nanoscale dimensions_are achievable with dramatically reduced cost using_novel material_designs without the need for additional_equipment upgrades. In order_to_form vertically oriented line-space patterns with_block copolymer domains, a neutral layer_must be present at the_bottom_of_the block copolymer layer.
Whereas in_DSA the sidewalls of the vertically_oriented line-space pattern_must have a preference for one polymer_block_over the other, e.g. via surface_chemistry,_in order to provide the impetus_to_properly_align the DSA lines, the_neutral layer should not. That is,_the neutral layer must not show a strong wetting_affinity for one_of the polymer blocks over_the_other._The matter of neutrality is further complicated in graphoepitaxy uses_inasmuch as_the neutral layer_must remain neutral after any processing prior to directed self-assembly,_e.g. resist development and etch. Moreover, the_neutral layer must be stable and remain neutral for a range_of thicknesses and deposition conditions. Conventional neutral layers_include polymers that