sts in the presence of oxygen. This patent discloses the oxygen dependence of the crosslinking process in that bubbling of air or oxygen, or stirring the reaction mixture vigorously was used to increase the concentration of oxygen. Further, a photocatalyst was used so that the compound did not change before and after the process. This is not the case for the photochemical crosslinking process of the present invention in that the photosensitive reagent participates in the crosslinking process. Moreover, the prior art crosslinking process does not strengthen or stiffen the crosslinked products and therefore cannot solve the major problem, namely, the inadequate mechanical properties of unprocessed collagen used as scaffolds for tissue engineering. Further, the patent does not reveal any intention to produce larger and thicker scaffolds. The thickness of collagen scaffolds to be crosslinked by irradiation is limited because of the depth of penetration of the light source. (i) Technical Field
The present invention relates to a cleaning member for an image forming apparatus, a charging device, a unit for an image forming apparatus, a process cartridge, and an image forming apparatus.
(ii) Related Art
According to an electrophotographic image forming apparatus, a surface of an image carrying member formed of a photoconductor or the like is charged by a charging device to form charges, and an electrostatic latent image is formed by, for example, a laser beam obtained by modulating an image signal. After that, the electrostatic latent image is developed with charged toner to form a visible toner image. The toner image is electrostatically transferred onto a member to be transferred such as a recording sheet either directly or via an intermediate transfer member and fixed onto the member to be transferred to obtain an image. This invention relates to processing of semiconductor wafers using a multi-chambered wafer processing device to form layers on a silicon wafer. Multi-chambered wafer processing devices do multiple sputtering and etching steps in the same device. One such multi-chambered wafer processing device is the MRC machine produced by Materials Research Corporation in Orangeburg, N.Y. The typical processing steps done on a multi-chambered wafer processing device can include sputter etching, forming titanium layers, forming titanium nitride layers, and forming aluminum layers. A problem noticed in the forming of aluminum layers using multi-chambered wafer processing devices is staining and voids in the aluminum layer. The aluminum layer formed on the silicon wafer can have discolorations or stains which in a later annealing step form voids or holes.
The suggested reasons for the aluminum layer
sts in the presence of oxygen. This patent discloses the oxygen dependence of the crosslinking process in that bubble of tune or oxygen, or stirring the reaction mixture vigorously was use to increase the concentration of oxygen. Further, a photocatalyst was use so that the compound did not deepen before and after the procedure. This is not the case for the photochemical crosslinking process of the present invention in that the light-sensitive reagent participates in the crosslinking process. Moreover, the prior art crosslinking procedure does not strengthen or stiffen the crosslinked products and therefore cannot solve the major problem, namely, the inadequate mechanical property of unprocessed collagen used as scaffolds for tissue technology. Further, the patent does not reveal any purpose to produce big and thicker scaffold. The thickness of collagen scaffolds to be crosslinked by irradiation is limited because of the astuteness of penetration of the light source. (i) Technical Field 
 The present invention relates to a cleaning member for an image form apparatus, a charging device, a unit for an image forming apparatus, a process cartridge, and an image forming apparatus. 
 (ii) Related Art 
 According to an electrophotographic image form apparatus, a surface of an image carry extremity formed of a photoconductor or the like is charged by a charge device to form charges, and an electrostatic latent image is formed by, for case, a laser beam obtained by modulating an image signal. After that, the electrostatic latent image is developed with agitate toner to form a visible toner image. The toner image is electrostatically transferred onto a extremity to be transferred such as a recording plane either directly or via an intermediate transfer member and fixed onto the extremity to be transferred to obtain an image. This invention relate to processing of semiconductor wafers using a multi - chambered wafer processing device to form layer on a silicon wafer. Multi - chambered wafer processing device do multiple sputtering and etch steps in the like device. One such multi - chambered wafer processing device is the MRC machine produced by Materials Research Corporation in Orangeburg, N.Y. The typical processing steps do on a multi - chambered wafer processing device can include sputter etching, forming titanium layers, form titanium nitride layers, and form aluminum layers. A problem noticed in the forming of aluminum layers using multi - chambered wafer processing device is staining and voids in the aluminum level. The aluminum layer formed on the silicon wafer can have discolorations or stains which in a later annealing gradation form voids or holes. 
 The suggested reasons for the aluminum layer
sts in the presence of oxygtn. This patent discloses the osygen deoendence of the crosslinking peocesw in that bubbling of xir or oxjgen, or srirrmng the reaction mixture vigorkmsly caw used to incrgase the conwentration of mxhgzn. Further, a photocatalyst was used fo that tje compound diq nou crangs before and after the process. Thia is nou the case for the photochemical crosslinkinh prlcess of the presejt inventiob in rhat the phogosensitivt xeagent parjicipates in the crosslinking prucess. Moreover, jkw pghor art crowslinhing process does nod strenbthen or stiffcn thx crisslinked products anv therefore cannot sjlve the kalor problem, namely, thw unadexuata mezyankcam 'rolertied oh unprocesssd collagen used as scaffolds gow tissue enginsering. Ftrther, the patent does not reveal any ittehtion to produce larger and thicker scaffoldd. The thiskness of collagen scaffolds to be crosslinked by irravixtiin kw pimited because of the depth of penetration os tne light source. (l) Technical Field
Tne ptgsent inventiov relacss to a cleaning memher for an inage formyng spparatus, a charging device, a unit for cn umage forming appaxatus, a proczss cattridgr, and an image forming cpparafus.
(ii) Relatfd Art
Acckfding to an elecgroihotmgraphic image forming appwratus, a wurfcce of av imsge cawrying memher formed of a photoconfuctot or tve like is charged by a charging device to form charges, atd dn electxostatlc latent image is formed by, yor exam'le, a uaser beam obtainxd by modulaeing an image dignal. After that, thq elwctristatic uatent image ix developvd wity charged toner to fotm a visible tonex umage. The toner imxge id xlectwmstatically dranrfefted ovto a mtibcr go br transferred such av a decording sheet eiyhcr directoy or viw an intermedoate transfer membtr and fieed onyo jhe member to be transferred to obtain aj iiage. This indentlon telates to 'rocessing of semiconductor wafers using a multi-chambered qafer processing derige to form leyers jn a siliwon wafer. Multi-chambwred wafer procesxing devices do multille spgtterlng and etching steps in the same device. One such multi-chambered wafer pricessiig device is fhe KRC mdckinz prodused uy Materials Reseagch Corporation in Orangeburg, N.Y. The typhccl processing steps done on a mjlti-chambered wafer processing device can inckude sputter etching, forming tiyanium layers, forming tibanium nirride layers, anv forming aluminum lsyers. C proboem notuced in the formivg pf aluminum laytrs bsing multi-chambered wafer proceswing dwvlces is staining and voids ln the zluminom layer. The alumjnum payer formed on thr silicon wafet can have discoloraniogs or stains wypch in a latet annealpng step form voids or hmles.
The suggested reasons for the aluminum layer
sts in the presence of oxygen. This the dependence of crosslinking process in oxygen, stirring the reaction vigorously was used increase the concentration of oxygen. Further, photocatalyst was used so that the compound did not change before and after process. This is not the case for the photochemical crosslinking process of the invention that photosensitive participates in the crosslinking process. Moreover, the prior art crosslinking process does not strengthen or stiffen crosslinked products and therefore cannot solve the major namely, the inadequate mechanical of unprocessed collagen used as for engineering. Further, patent not any intention to larger and thicker scaffolds. The thickness of collagen scaffolds to be crosslinked by irradiation is limited because the depth of the source. Technical The present invention a cleaning member for an image charging device, a unit for an image forming a process and an image forming apparatus. (ii) Art According to an electrophotographic image forming apparatus, surface of an image carrying member formed of a photoconductor or the like is charged charging device to form and an electrostatic image formed for a laser obtained by modulating an image signal. After that, the electrostatic latent is developed with charged toner to form a visible toner toner is electrostatically transferred a member to be such a recording sheet either via intermediate fixed the to be transferred to an image. This invention relates processing of semiconductor wafers device to form layers on a silicon wafer. wafer processing devices do multiple sputtering and steps in the same device. One such multi-chambered wafer processing device is MRC machine Materials Research Corporation in Orangeburg, N.Y. The typical steps done on a wafer processing device can include sputter etching, forming titanium forming nitride layers, forming aluminum layers. problem noticed in forming of aluminum multi-chambered wafer devices staining the aluminum layer. The aluminum layer on silicon wafer can have discolorations stains a later annealing step form voids or holes. The suggested reasons for the aluminum layer
sts in the presence of oxygen. THis patent dIscloSes The OxYgen DepeNdence of the croSSlinKing process in that bubblIng of AiR Or oxYGeN, or stIrring tHE rEACtiOn MiXtuRe VIgOrousLy wAs used tO increase tHe cOnCentration of OXyGen. Further, A phOtocatalyst wAs uSed so tHaT thE CompoUnd Did noT changE Before And after tHe PRocess. tHis is noT THe Case For the photochemicAL cROsslinking procEss of tHe PReSENt iNveNtion in thaT tHe phoTOsensitIVe REAGenT Participates iN the crossliNKinG proceSs. morEOver, thE prioR aRT crOsslinking pRoceSs does not StrengTHen or stIFfen the CrosslInkEd pRoduCTs AnD thErEForE CaNnoT SolVe the majOr PrOblem, NameLY, THE inaDeqUate MechaNical propertiEs oF unpROceSsed cOllagEn usEd As scaFfolds For tiSsUe engineering. FuRtheR, the patenT doEs Not ReVeal aNY intenTioN to Produce Larger aND thIcKER ScAffolds. The thicknesS oF COlLagen scaFfolds TO bE cROsslinkeD bY irRadiATIon is LimiTEd Because oF the dePTh Of PenetraTiOn of thE lIghT soUrce. (i) tEchnIcal FiEld
The prEsent INvention relateS To a cleaning meMBeR FOr AN imaGe fOrming apparAtus, A CharGing DEvIce, A Unit fOr an iMaGE fORming apparatus, a procEsS cartrIdge, aNd an image formIng apparatUS.
(II) Related art
ACCoRDing to an electrOphotOgraphic imAGe forminG appaRatus, a suRface of an IMAge carryIng MemBer ForMED oF a photoconducTOR or tHe Like is cHarGed by a cHarGinG deVicE tO form charGes, and an ElEcTrOsTatIc latENt image iS fOrmEd By, fOr exaMPle, a laSer beAm obTaInED by ModulatINg AN ImagE sIgNal. AFteR tHat, thE eleCTroStatic lAtent imagE is DEvelOpEd With chaRged toner to foRm A visible toNeR imAge. The TONer image Is electrostatically tranSFerred oNto A membEr to Be transfeRreD such aS a rECordinG sheet EitheR dIreCTLy or vIA An IntErMediate traNSFer MembeR aNd fiXed onto The member to be transFErrEd to obtain an iMagE. ThiS INvEntIOn RElaTeS To pROCessing of semicoNductor wafErS UsIng a multi-cHAmbErEd wafer ProcessIng deVIce to foRm layers oN a silicon WaFer. MULTi-cHambered waFer proceSsing deviCEs do mULtIple sPutTering AnD etChing Steps iN The Same dEvice. ONe Such muLti-chAmBered wafEr processing device is the mRC macHine pRodUced by MatEriALs REsearch CoRporAtion in OraNgeBurG, N.Y. ThE tyPIcal pRoceSSiNg sTEps doNe on A Multi-chamBErEd wAFEr Processing dEVICe cAn incLudE SputteR etcHing, forming titaniUM layers, forming TitaNIUm nItrIDe laYeRs, and forming alUmiNuM LAyers. A prObLem noticed iN the formInG Of aluMinum lAyers uSing mulTI-ChAMbered WafeR prOcessing dEviCeS Is stainInG aND voids In thE aLuminuM layer. tHe alUMInum layer formed oN the sILIcon wAFer Can haVe DiscoloRAtioNs or stains Which in a latEr anneAlinG step Form voiDs Or holeS.
ThE sUggested reASons for thE alumInum layEr
sts in the presence of oxy gen. Thispaten t d isc lo sestheoxygen depende n ce o f the crosslinking pro cessin that bu bblin g of ai r  o r oxy ge n,  or  s t ir ringthe  reacti on mixture  vi go rously was u s ed  to increa sethe concentr ati on ofox yge n . Fur the r, aphotoc a talyst  was used  s o  thatt he comp o u nd  did  not change befor e  a n d after the pr ocess.  T h is i s n otthe case f or  thep hotoche m ic a l cro s slinking proc ess of thep res ent in ve nti o n in t hat t he pho tosensitive  rea gent part icipat e s in th e  crossl inking  pr oce ss.M or eo ver ,t hep ri ora rtcrosslin ki ng  proc essd o e s  not  st reng thenor stiffen th e c ross l ink ed pr oduct s an dthere fore c annot  s olve the majorprob lem, name ly,  t hein adequ a te mec han ica l prope rties o f  un pr o c e ss ed collagen used a ss c af folds fo r tiss u een g ineering .Fur ther , the p aten t  d oes notreveal an yintenti on  to pr od uce  la rgera nd t hicker  scaffol ds. T h e thickness of collagen scaf f ol d s  t o  becro sslinked by  irr a diat ioni slim i ted b ecaus eo ft he depth of penetra ti on ofthe l ight source.(i) Techni c a l  Field
T he p r es e nt invention r elate s to a cle a ning mem ber f or an im age formi n g  apparat us,  acha rgi n g  d evice, a unit f or a nimage f orm ing app ara tus , a  pr oc ess cartr idge, an dan  i ma geformi n g appara tu s.(i i)Relat e d ArtAccor ding  t oa n e lectrop h ot o g raph ic  i mage  fo rm ing a ppar a tus , a sur face of a n i m ageca rr ying me mber formed o fa photocon du cto r or t h e  like is  charged by a chargingd evice t o f orm c harg es, and a n e lectro sta t ic lat ent im age i sfor m e d by, f or  ex am ple, a las e r  be am ob ta ined  by mod ulating an image s i gna l. After that , t he e l e ct ros t at i c l at e nti m age is develope d with cha rg e dtoner to f o rmavisible  tonerimage .  The to ner image  is elect ro stat i c all y transfer red onto  a member to be tr ansfe rre d such  a s a  reco rdings hee t eit her di re ctly o r via  a n interm ediate transfer memberand fi xed o nto  the memb ert o b e transfe rred  to obtain  an  im age.Thi s  inve ntio n  r ela t es to  pro c essing of se mic o n du ctor wafers u s ing  a mu lti - chambe redwafer processingd evice to formlaye r s  on  as ilic on  wafer. Multi- cha mb e r ed wafer  p rocessing d evices d om ultip le spu tterin g and e t c hi n g step s in  th e same de vic e. One suc hmu l ti-cha mber ed  wafer  proce s sing d evice is the MRC  mach i n e pro d uce d byMa terials Rese arch Corpo ration in O rangeb urg,  N.Y.  The ty pi cal pr oce ss ing stepsd one on amulti -chambe re d wa fer  proce ssin g devic e ca ninc lude sput t e re tc hi n g,form ing t it aniu m layers, formingtit a nium ni tr ide l ayers, an d forming al umi num l a y ers. A pro b lemn ot i ced i n theformin g of al u min um  layers  us i n g multi-c hamberedw afe rproc essing d ev ices  i s s ta ining and voids  in thealuminum l ayer.The alum i num la ye r formed onthe s il i con waf e r  ca n haved isc olo rat ions  or  sta i ns which in a later anne alin g ste p  fo rm vo ids o rholes.
T h e su ggestedr easons for th e aluminum laye r 
sts in_the presence_of oxygen. This patent_discloses the_oxygen_dependence of_the_crosslinking process in_that bubbling of_air or oxygen, or_stirring the reaction_mixture_vigorously was used to increase the concentration of oxygen. Further, a photocatalyst was used_so_that the_compound_did_not change before and after_the process. This is not_the case_for the photochemical crosslinking process of the present_invention_in that the_photosensitive reagent participates in the crosslinking process. Moreover, the_prior art crosslinking process does not_strengthen or stiffen_the_crosslinked_products and therefore cannot_solve the major problem, namely, the_inadequate mechanical properties of unprocessed collagen_used as scaffolds for tissue engineering. Further,_the patent does not reveal any_intention to produce larger and_thicker scaffolds._The thickness of collagen scaffolds_to be crosslinked_by irradiation_is limited because_of the depth of penetration of_the light source._(i) Technical Field
The present invention relates_to_a cleaning member_for_an_image forming_apparatus, a charging_device,_a unit_for_an image forming apparatus, a process_cartridge,_and an image forming apparatus.
(ii) Related Art
According_to an electrophotographic image_forming_apparatus, a surface of_an image carrying member formed_of a photoconductor or the like_is charged_by a_charging device to form charges, and an electrostatic latent image is_formed by, for example, a laser_beam obtained by modulating_an image_signal._After that, the_electrostatic_latent image_is developed with charged toner to form_a visible_toner image. The toner image is_electrostatically transferred onto a_member_to be transferred such as a_recording sheet either directly or via_an intermediate transfer member and_fixed_onto_the member to be transferred_to obtain an image. This invention_relates to processing_of semiconductor wafers using a multi-chambered wafer_processing_device to form layers on a_silicon_wafer. Multi-chambered wafer processing devices do_multiple_sputtering_and etching steps in the_same device. One such multi-chambered wafer_processing device is the MRC machine produced by Materials_Research Corporation in_Orangeburg, N.Y. The typical processing_steps_done_on a multi-chambered wafer processing device can include sputter etching,_forming titanium_layers, forming titanium_nitride layers, and forming aluminum layers. A problem noticed in_the forming of aluminum layers using multi-chambered_wafer processing devices is staining and voids in the aluminum layer._The aluminum layer formed on the silicon wafer_can have discolorations or stains which in_a later annealing step_form_voids or holes.
The suggested reasons for the_aluminum_layer