 the cost is also relatively expensive.
On the other hand, in the fixing unit, heat is applied, and at the same time, force to draw the sheet is applied so far. That is, in the fixing unit, the roll is formed so that the diameter in both ends is slightly larger than that in the center, and the force to expand the sheet outward is applied. This force serves to smooth the wrinkles of the sheet. The method as stated above is a technique generally used as a countermeasure against paper wrinkles. However, by this, the sheet is slightly deformed as shown in FIG. 19, and an image on the sheet is also deformed as shown in the figure. Besides, to be exact, with respect to the influence of heat given on the sheet, the quantity of the influence is different between the leading end of the sheet and the trailing end, and as shown in FIG. 20, the width of the sheet sometimes becomes different between the leading end and the trailing end depending on moisture content distribution. Besides, by the influence of the eccentricity of the roll, as shown in FIGS. 21A and 21B, the sheet sometimes cockles.
With respect to the deformation caused in the fixing unit, in view of a trade-off with other basic performances, a positive correction has not been preformed so far.
The defect of the image as described above degrades the quality of the image, and particularly influences the registration performance in printing. Various embodiments relate generally to a semiconductor memory device and a method of operating the same.
Either non-volatile or volatile type of semiconductor memory devices utilizes a semiconductor material such as silicon Si, germanium Ge, gallium arsenide GaAs, indium phosphide InP, etc.
A volatile memory device would lose the stored data if power is not supplied. The volatile memory device includes a static RAM ‘SRAM’, a dynamic RAM ‘DRAM’, a synchronous DRAM ‘SDRAM’ and so on. A non-volatile memory device on the other hand retains the stored data even though power is not supplied. The non-volatile memory device includes a read only memory ‘ROM’, a programmable ROM ‘PROM’, an electrically programmable ROM ‘EPROM’, an electrically erasable and programmable ROM ‘EEPROM’, a flash memory, a phase-change RAM ‘PCRAM’, a magnetic RAM ‘MRAM’, a resistive RAM ‘ReRAM’, a ferroelectric RAM ‘FeRAM’, etc. Flash memory devices are generally of a NOR or N
the cost is also relatively expensive. 
 On the other hand, in the neutering unit of measurement, heat is applied, and at the same fourth dimension, force to draw the plane is applied so far. That is, in the repair unit, the roll is shape so that the diameter in both ends is slightly big than that in the plaza, and the force to expand the sheet outward is applied. This force serve to smooth the wrinkles of the sheet. The method acting as stated above is a technique by and large used as a countermeasure against composition wrinkles. However, by this, the sheet is slightly deformed as shown in FIG. 19, and an picture on the sheet is also deformed as shown in the figure. Besides, to be accurate, with esteem to the influence of heat given on the sheet, the quantity of the influence is different between the leading end of the sheet and the trailing goal, and as shown in FIG. 20, the width of the sheet sometimes become unlike between the lead end and the trailing end depend on moisture content distribution. Besides, by the influence of the eccentricity of the roll, as shown in FIGS. 21A and 21B, the sheet sometimes ripple. 
 With respect to the deformation caused in the fixing unit, in view of a craft - off with other basic performances, a positive correction has not been preform so far. 
 The blemish of the persona as described above degrades the quality of the image, and particularly influences the registration operation in printing. respective embodiments relate broadly to a semiconductor memory device and a method acting of operating the same. 
 Either non - volatile or volatile type of semiconductor device memory devices utilizes a semiconductor material such as silicon Si, germanium Ge, gallium arsenide GaAs, indium phosphide InP, etc. 
 A fickle memory device would lose the stored data if power is not supplied. The fickle memory device includes a static RAM ‘ SRAM ’, a dynamic RAM ‘ DRAM ’, a synchronous DRAM ‘ SDRAM ’ and so on. A non - volatile memory device on the other hand retain the stored data even though ability is not supplied. The non - volatile memory device includes a read only memory ‘ ROM ’, a programmable ROM ‘ promenade ’, an electrically programmable ROM ‘ EPROM ’, an electrically erasable and programmable ROM ‘ EEPROM ’, a flash memory, a phase - change RAM ‘ PCRAM ’, a magnetic RAM ‘ MRAM ’, a insubordinate RAM ‘ ReRAM ’, a ferroelectric RAM ‘ FeRAM ’, etc. Flash memory devices are generally of a NOR or N
 thf cost is also relativeln expensive.
On thg ither iand, in the fixkng unit, heat is applied, and ar the same time, force to drxw the shvet is appliev so far. That is, in the nnxing mnit, chx roll is formec so that dhe diameter it coch ends is slightly larger than that in the cfnter, and the sorct tj exland the sheet outward is applied. Fhis fogce serves to smopth the wrinkles of the shfet. Hhe method as statfd above is a tqxhnique genefally used as a countetmeasure against paper wrinkles. Fowevzr, by this, jkw sjget is slighvly desormed as shown in FHG. 19, and an image on tme shxet us also deformed as siown in the figure. Bgsides, to te exact, with respext to tve itfludbce of hxat given on the sheet, the quantiry of the influence if different befween ehq leading end of the sheet and the traininf end, and as shown in FUG. 20, the width of the dheet somqtimes becomes different between the leading end dnd tie trcljkbg end depending on moisture content distributijh. Nexides, by the ikfluence of the ecvejttycity of the toll, as shkwn in FIGS. 21A and 21H, the sreet wometimes coclles.
With respect to the defirmation caufwd in the fixing uuit, in view uf a tradr-off with other basic pzrformznces, a posltive corddction has not bden pseformed so far.
The defect jf the imege ax descrkbed above degrades hhe qmdlity of the image, and karticglarly infpuences the registration performance in printonc. Vdrious eibodikents relate denerally to a semicouductof memory dvvice and a method os operating tvg same.
Either ion-volatije oe vooatile ghpe of semiconcuctor memory devicws utilizes a semigonduzfor material suek qs silicon Si, grrmxnitm Gx, galjhum arsenide GaAr, ivcium ohosphide IkP, dtc.
A volatile memory devhce sould lose the stoteq data id power ys not supplird. The volatile melory vevice inclidef a static RAM ‘SRAM’, a dynamic DAM ‘DRAM’, w snnchronous DRWM ‘SERAM’ and so pn. A non-volatile memory device on the ovher hand retains the srored data even thoogh power is npt su[plied. Tha non-volatile memory device includes s read only memory ‘ROJ’, a prmgramlable ROM ‘PROM’, an electrically programmable ROM ‘EPROM’, an electrically erawable enq programmagle TOM ‘EVPRJK’, a flwsh lxmory, a phase-chanbe RAM ‘PCRAM’, a magnetic RAM ‘MRAO’, a resivtnve RAM ‘ReRAM’, a ferroelectric RXM ‘FeRAM’, etc. Wlash memory devices are generalky of a NOR or N
the cost is also relatively expensive. On hand, the fixing heat is applied, force draw the sheet applied so far. is, in the fixing unit, the is formed so that the diameter in both ends is slightly larger than in the center, and the force to expand the sheet outward is applied. force to the of the sheet. The method as stated above is a technique generally used as a countermeasure paper wrinkles. However, by this, the sheet is deformed as shown in 19, and an image on sheet also deformed shown the Besides, to be with respect to the influence of heat given on the sheet, the quantity of the influence is between the of the and trailing and as shown 20, the width of the sheet between the leading end and the trailing end on moisture distribution. Besides, by the influence of eccentricity of the roll, as shown in FIGS. and 21B, the sheet sometimes cockles. With respect to the deformation caused in the fixing view of a trade-off other basic performances, positive has been so far. defect of the image as described above degrades the quality of image, and particularly influences the registration performance in printing. Various generally a semiconductor memory and a method of the Either non-volatile or volatile semiconductor devices material as Si, germanium Ge, gallium GaAs, indium phosphide InP, etc. volatile memory device would power is not supplied. The volatile memory device a static RAM ‘SRAM’, a dynamic RAM a synchronous DRAM ‘SDRAM’ and so on. A non-volatile memory device on other hand stored data even though power is not supplied. non-volatile memory device includes read only memory ‘ROM’, a programmable ROM ‘PROM’, an programmable ‘EPROM’, an erasable and programmable ‘EEPROM’, a flash a phase-change RAM magnetic RAM a RAM RAM ‘FeRAM’, etc. Flash memory devices generally a NOR or N
 the cost is also relatively exPensive.
On tHe othEr hAnd, In The fIxinG unit, heat is appLIed, aNd at the same time, force to Draw tHe SHeet IS aPplieD so far. THAt IS, In tHe FiXinG uNIt, The roLl iS formed So that the dIamEtEr in both ends IS sLightly larGer Than that in thE ceNter, anD tHe fORce to ExpAnd thE sheet OUtward Is applied. thIS force SErves to SMOoTh thE wrinkles of the sheET. THE method as stateD above Is A TeCHNiqUe gEnerally usEd As a coUNtermeaSUrE AGAinST paper wrinkleS. However, by tHIs, tHe sheeT iS slIGhtly dEformEd AS shOwn in FIG. 19, and An imAge on the sHeet is ALso defoRMed as shOwn in tHe fIguRe. BeSIdEs, To bE eXAct, WItH reSPecT to the inFlUeNce of Heat GIVEN on tHe sHeet, The quAntity of the inFluEnce IS diFfereNt betWeen ThE leadIng end Of the ShEet and the trailiNg enD, and as shoWn iN FiG. 20, tHe Width OF the shEet SomEtimes bEcomes dIFfeReNT BEtWeen the leading end aNd THE tRailing eNd depeNDiNg ON moisturE cOntEnt dISTribuTion. bEsIdes, by thE influENcE oF the eccEnTricitY oF thE roLl, as sHOwn iN FIGS. 21A And 21B, the sHeet sOMetimes cockles.
wIth respect to tHE dEFOrMAtioN caUsed in the fiXing UNit, iN vieW Of A trADe-off With oThER bASic performances, a posItIve corRectiOn has not been pReformed so FAR.
the defecT of tHE iMAge as described Above Degrades thE Quality oF the iMage, and pArticularLY InfluencEs tHe rEgiStrATIoN performance iN PRintInG. VariouS emBodimenTs rElaTe gEneRaLly to a semIconductOr MeMoRy DevIce anD A method oF oPerAtIng The saME.
EitheR non-vOlatIlE oR VolAtile tyPE oF SEmicOnDuCtor MemOrY deviCes uTIliZes a semIconductoR maTEriaL sUcH as siliCon Si, germaniuM GE, gallium arSeNidE GaAs, iNDIum phospHide InP, etc.
A volatile memoRY device WouLd losE the Stored datA if Power iS noT SuppliEd. The vOlatiLe MemORY deviCE InCluDeS a static RAm ‘srAM’, A dynaMiC RAM ‘dRAM’, a syNchronous DRAM ‘SDRAM’ ANd sO on. A non-volatiLe mEmorY DEvIce ON tHE otHeR HanD REtains the stored Data even thOuGH pOwer is not sUPplIeD. The non-VolatilE memoRY device Includes a Read only mEmOry ‘Rom’, A prOgrammable rOM ‘PROM’, aN electricALly prOGrAmmabLe RoM ‘EPROm’, aN elEctriCally eRAsaBle anD progrAmMable RoM ‘EEPrOm’, a flash mEmory, a phase-change RAM ‘PCRaM’, a magNetic rAM ‘mRAM’, a resiStiVE RAm ‘ReRAM’, a feRroeLectric RAM ‘feRaM’, eTc. FlaSh mEMory dEvicES aRe gENeralLy of A nOR or N
 the cost is also relative ly expensi ve.
O n t heot herhand , in the fixin g  uni t, heat is applied, an d atth e  sam e  t ime,force t o  d r a w t he  s hee ti sappli edso far.  That is,inth e fixing uni t ,the roll i s f ormed so tha t t he dia me ter in bo thendsis sli g htly l arger tha nt hat in the cen t e r,  and  the force to exp a nd the sheet outw ard is  a p pl i e d.Thi s force se rv es to smootht he w r ink l es of the she et. The met h odas sta te d a b ove is  a te ch n iqu e generally  use d as a co unterm e asure a g ainst p aper w rin kle s. H o we ve r,by thi s ,the she et is sl ig ht ly de form e d a s sh own  inFIG.19, and an im age  ont hesheet  is a lsode forme d as s hownin  the figure. Be side s, to beexa ct , w it h res p ect to  th e i nfluenc e of he a t g iv e n on  the sheet, the qu an t i ty  of theinflue n ce  i s  differe nt  be twee n the l eadi n gend of t he she e tan d the t ra ilingen d,and  as s h ownin FIG . 20, th e wid t h of the sheet sometimes bec o me s di f fere ntbetween the  lea d ingenda nd  th e  trai lingen d  d e pending on moisture  c ontent  dist ribution. Bes ides, by t h e influenc e of th e  eccentricityof th e roll, as shown in  FIGS . 21A an d 21B, th e sheet so met ime s c ock l e s. 
With respect t o th edeforma tio n cause d i n t hefix in g unit, i n view o fatr ad e-o ff wi t h otherba sic  p erf orman c es, aposit iveco rr e cti on hasn ot b eenpr ef orme d s ofar.Thed efe ct of t he imageasd escr ib ed  abovedegrades thequ ality of t he  im age, a n d  particu larly influences the re g istrati onperfo rman ce in pri nti ng. Va rio u s embo diment s rel at e g e n erall y to  ase miconducto r mem ory d ev iceand a m ethod of operating the  same.
Either  no n-vo l a ti leo rv ola ti l e t y p e of semiconduc tor memory  d e vi ces utiliz e s a  s emicond uctor m ateri a l suchas silico n Si, ger ma nium G e,gallium ar senide G aAs, indi u m pho s ph ide I nP,  etc.Avol atile  memor y  de vicewouldlo se the  stor ed  data if  power is not supplied.  The v olati lememory de vic e  in cludes astat ic RAM ‘SR AM’ , a  dyna mic RAM ‘ DRAM ’ ,a s y nchro nous DRAM ‘SDR A M’  an d so  on. A non- v o l ati le me mor y  devic e on  the other hand r e tains the stor ed d a t a e ven thou gh  power is notsup pl i e d. The n on -volatile m emory de vi c e inc ludesa read  only m e m or y  ‘ROM’ , apro grammable  RO M‘ PROM’,an  e l ectric ally  p rogram mableR OM ‘ E P ROM’, an electri cally e rasab l e a nd pr og rammabl e  ROM  ‘EEPROM’,  a flash me mory,a ph ase-c hange R AM  ‘PCRA M’,  a  magneticR AM ‘MRAM’ , a r esistiv eRAM‘Re RAM’,a fe r r oelec tric  R AM‘FeRAM’,e t c. Fl as h  me mory  devi ce s ar e general l y of a N ORo r N
 the_cost is_also relatively expensive.
On the_other hand,_in_the fixing_unit,_heat is applied,_and at the_same time, force to_draw the sheet_is_applied so far. That is, in the fixing unit, the roll is formed so_that_the diameter_in_both_ends is slightly larger than_that in the center, and_the force_to expand the sheet outward is applied. This_force_serves to smooth_the wrinkles of the sheet. The method as stated_above is a technique generally used_as a countermeasure_against_paper_wrinkles. However, by this,_the sheet is slightly deformed as_shown in FIG. 19, and an_image on the sheet is also deformed_as shown in the figure. Besides,_to be exact, with respect_to the_influence of heat given on_the sheet, the_quantity of_the influence is_different between the leading end of_the sheet and_the trailing end, and as shown_in_FIG. 20, the_width_of_the sheet_sometimes becomes different_between_the leading_end_and the trailing end depending on_moisture_content distribution. Besides, by the influence of_the eccentricity of the_roll,_as shown in FIGS._21A and 21B, the sheet_sometimes cockles.
With respect to the deformation_caused in_the fixing_unit, in view of a trade-off with other basic performances, a_positive correction has not been preformed_so far.
The defect of_the image_as_described above degrades_the_quality of_the image, and particularly influences the registration_performance in_printing. Various embodiments relate generally to_a semiconductor memory device_and_a method of operating the same.
Either_non-volatile or volatile type of semiconductor_memory devices utilizes a semiconductor_material_such_as silicon Si, germanium Ge,_gallium arsenide GaAs, indium phosphide InP,_etc.
A volatile memory_device would lose the stored data if_power_is not supplied. The volatile memory_device_includes a static RAM ‘SRAM’, a_dynamic_RAM_‘DRAM’, a synchronous DRAM ‘SDRAM’_and so on. A non-volatile memory_device on the other hand retains the stored data_even though power_is not supplied. The non-volatile_memory_device_includes a read only memory ‘ROM’, a programmable ROM ‘PROM’,_an electrically_programmable ROM ‘EPROM’,_an electrically erasable and programmable ROM ‘EEPROM’, a flash memory,_a phase-change RAM ‘PCRAM’, a magnetic RAM_‘MRAM’, a resistive RAM ‘ReRAM’, a ferroelectric RAM ‘FeRAM’, etc. Flash_memory devices are generally of a NOR or_N