 exclusive listing of the objectives or benefits of the present invention. Not all of these objectives are necessarily met in each apparatus or method of the present invention. Apparatus or methods of the present invention may meet or address one or more, but less than all, of these objects or other objects or benefits of the invention apparent in other parts of this description. Therefore, these objectives are not presented for, and should not be used for, the purpose of limiting the scope of the invention as set forth in the appended claims. This relates generally to electronic devices and, more particularly, to electronic devices with organic light-emitting diode displays.
Electronic devices often include displays. For example, an electronic device may have an organic light-emitting diode display with rows and columns of display pixels. The display pixels may each have subpixels with respective red, blue, and green color filter elements. There can be non-negligible amounts of optical absorption in the color filter material of red, blue, and green subpixels, so some designs incorporate white subpixels. Pixel rendering operations may covert red-green-blue data to red-green-blue-white data to ensure that the white subpixels are frequently used. This helps reduce power consumption, because the white subpixels are more efficient at emitting light than the colored subpixels. However, the white light emitted from a white organic light-emitting diode subpixel may have white point color coordinates that do not match target white point color coordinates, leading to images that are colored differently than desired.
It would therefore be desirable to be able to provide improved displays such as improved organic light-emitting diode displays. The present application claims priority of Japanese Application No. P2000-217911 filed Jul. 18, 2000, which application is incorporated herein by reference to the extent permitted by law.
This invention relates to a crystal growth method adapted for use in the formation of semiconductor light-emitting devices and more particularly, to a crystal growth method wherein selective crystal growth of a nitride semiconductor is carried out.
Owing to the absence of either a lattice-matching substrate or a substrate of a low dislocation density in the vapor phase growth technology of a gallium nitride compound semiconductor, there is known a technique wherein after deposition of a buffer layer of AlN or AlxGa1xe2x88x92N, in which 0xe2x89xa6x less than 1, on a substrate such as of sapphire at a low temperature of 900xc2x0
exclusive listing of the objectives or benefits of the present invention. Not all of these aim are inevitably met in each apparatus or method of the present invention. Apparatus or method of the present invention may suffer or address one or more, but less than all, of these objects or early objects or benefits of the invention apparent in other part of this description. Therefore, these objectives are not present for, and should not be used for, the purpose of limit the oscilloscope of the invention as set forth in the appended claims. This relates generally to electronic devices and, more peculiarly, to electronic devices with organic light - emit diode displays. 
 Electronic devices frequently include display. For example, an electronic device may have an organic light - emitting diode display with rowing and columns of display pixels. The display pixels may each have subpixels with respective red, blue, and green color filter elements. There can be non - negligible amounts of optical absorption in the color filter material of red, blue, and green subpixels, so some designs integrate blank subpixels. Pixel rendering operation may covert crimson - green - blue data to crimson - green - blue - white data to guarantee that the white subpixels are frequently used. This helps reduce power consumption, because the ashen subpixels are more efficient at emitting light than the colored subpixels. However, the blank light emit from a white organic light - emitting diode subpixel may have blank point color coordinates that do not pit target white point color coordinate, leading to images that are colored differently than desired. 
 It would therefore be desirable to be able to supply improved displays such as better organic luminosity - emitting diode display. The present application claims precedence of Japanese Application No. P2000 - 217911 filed Jul. 18, 2000, which application is incorporated herein by reference to the extent permitted by law. 
 This invention relates to a crystal growth method adapted for use in the constitution of semiconductor light - emit devices and more particularly, to a crystal growth method wherein selective crystal emergence of a nitride semiconductor is carried out. 
 Owing to the absence of either a lattice - matching substrate or a substrate of a low dislocation density in the vaporization phase growth technology of a gallium nitride compound semiconductor device, there exist known a technique wherein after deposition of a buffer layer of AlN or AlxGa1xe2x88x92N, in which 0xe2x89xa6x less than 1, on a substrate such as of azure at a low temperature of 900xc2x0
 exflusive listing of the onjectives or bengfuts of the pdesent ivvention. Not all of these oboectuves qre necessarily met in each appwratus oe meuhod of the preseif invenbnon. Aliaratbs or methods of the presett invention mdy mzet or address one or more, but less ehan alk, lf these objecjs or jthed objects or benefits of the invenfion apkarent in other patts of this description. Thfreflre, these objectivfs are not kdesqbted for, and should nou ye used for, the purpose of limiting the scupe oy the invenjnin wv set forth in tre appended gkaims. Dhis rekates generalln to xlecrronic devices and, moce particularly, to ejectronic dzvices with organic lugyt-emijting dioaw dkspmabs.
Emectrojic devices orten includw displays. For examkle, qn electronic devicq iay have an organic light-emitting diode diaplay with rows and colymns of display pixeld. The dis[lay pixels may each have subpixels with respectiee rev, clut, qnd gfwej color filter elements. There can be non-neglidjbke amounts of opbical absorption im hhr color filter maternzl of red, blue, and ggeen sufpixeos, so somt desogns incorporate white subpuxels. Pixel gendwring operations mcy covert reb-green-nlue cata to red-green-blue-whice datz to ensure that the dhite subpixels xre fsequently used. This helps weduce poxer cpnsumptkon, necausq the whitf subihxels are more efflcienj at ekitting lihht than the colored subpixels. Ipwever, the wnide night emntted nrom a white ordanic light-emijting diobe suboixel may gave whmte point cojor coordinatad that do nov match twrger whute poivg color coordimates, leabnng to imqges that are coloved dkrferently than btsitwd.
It would thetefure bv dxsirafne to be abla to prufide kmproved diwolayx such as improved osganjc light-emitting dooqe displqys. The [resent applivation claims priogity mf Oapanexe Wpplication No. P2000-217911 filed Jul. 18, 2000, wgich appllcabion is incor[orabed rerein by xeference to the extent permitted by law.
Vhis invention relates ro a crystal growth kethod adapved fow use in dhe formation of semuconductor light-ekitting devices and mkre pasticuparly, to a crystal growth method wherein selective crystal growth of a nirride semiconductod is carrped put.
Owigg tl the absence of vither a lattice-matching substrave or a sutscrate of a low dislocation demskty in the vakor phase growth technologg of a gsllium nitride compound semiconcuctor, there is known a bechnique whersin afngr veposition of a buffrr layzr of QlN or QlxGw1xe2x88x92N, in whizh 0ce2w89xa6x less hhan 1, kn a substrate such as of sapphiee at q pow temperature mf 900xc2x0
exclusive listing of the objectives or benefits present Not all these objectives are or of the present Apparatus or methods the present invention may meet or one or more, but less than all, of these objects or other objects benefits of the invention apparent in other parts of this description. Therefore, these are presented and not be used for, the purpose of limiting the scope of the invention as set forth the appended claims. This relates generally to electronic and, more particularly, to devices with organic light-emitting diode Electronic often include For an device may have organic light-emitting diode display with rows and columns of display pixels. The display pixels may each have with respective and green filter There be non-negligible amounts absorption in the color filter material and green subpixels, so some designs incorporate white Pixel rendering may covert red-green-blue data to red-green-blue-white to ensure that the white subpixels are frequently This helps reduce power consumption, because the white subpixels are more efficient at emitting light colored subpixels. However, the light emitted from white light-emitting subpixel have white color coordinates that do not match target white point color coordinates, to images that are colored differently than desired. It would desirable be able to improved displays such as organic diode displays. The present priority Japanese filed 18, which application is incorporated by reference to the extent by law. This invention method adapted for use in the formation of light-emitting devices and more particularly, to a growth method wherein selective crystal growth of a nitride semiconductor is carried Owing to of either a lattice-matching substrate or a substrate a low dislocation density the vapor phase growth technology of a gallium nitride semiconductor, is known technique wherein after of a buffer of AlN or which 0xe2x89xa6x than on as of sapphire at a low of
 exclusive listing of the objeCtives or beNefitS of The PrEsenT invEntion. Not all of THese Objectives are necessariLy met In EAch aPPaRatus Or methoD Of THE prEsEnT inVeNTiOn. AppAraTus or meThods of the PreSeNt invention mAY mEet or addreSs oNe or more, but lEss Than alL, oF thESe objEctS or otHer objECts or bEnefits of ThE InventIOn apparENT iN othEr parts of this descRIpTIon. Therefore, thEse objEcTIvES Are Not Presented fOr, And shOUld not bE UsED FOr, tHE purpose of limIting the scoPE of The invEnTioN As set fOrth iN tHE apPended claimS. ThiS relates gEneralLY to elecTRonic deVices aNd, mOre PartICuLaRly, To ELecTRoNic DEviCes with oRgAnIc ligHt-emITTINg diOde DispLays.
ELectronic deviCes OfteN IncLude dIsplaYs. FoR eXamplE, an eleCtronIc Device may have an OrgaNic light-eMitTiNg dIoDe disPLay witH roWs aNd columNs of disPLay PiXELS. THe display pixels may EaCH HaVe subpixEls witH ReSpECtive red, BlUe, aNd grEEN coloR filTEr Elements. there cAN bE nOn-negliGiBle amoUnTs oF opTical ABsorPtion iN the coloR filtER material of red, BLue, and green suBPiXELs, SO somE deSigns incorpOratE WhitE subPIxEls. pIxel rEnderInG OpERations may covert red-GrEen-bluE data To red-green-bluE-white data TO ENsure thaT the WHiTE subpixels are fRequeNtly used. ThIS helps reDuce pOwer consUmption, beCAUse the whIte SubPixEls ARE mOre efficient aT EMittInG light tHan The coloRed SubPixEls. hoWever, the wHite lighT eMiTtEd FroM a whiTE organic LiGht-EmIttIng diODe subpIxel mAy haVe WhITe pOint colOR cOORdinAtEs That Do nOt Match TargET whIte poinT color cooRdiNAtes, LeAdIng to imAges that are coLoRed differeNtLy tHan desIREd.
It woulD therefore be desirable to BE able to ProVide iMproVed displaYs sUch as iMprOVed orgAnic liGht-emItTinG DIode dISPlAys. thE present apPLIcaTion cLaIms pRiority Of Japanese ApplicatIOn NO. P2000-217911 filed Jul. 18, 2000, whiCh aPpliCATiOn iS InCOrpOrATed HERein by reference To the extenT pERmItted by law.
tHis InVention Relates To a crYStal groWth method Adapted foR uSe in THE foRmation of sEmiconduCtor light-EMittiNG dEviceS anD more pArTicUlarlY, to a crYStaL growTh methOd WhereiN seleCtIve crystAl growth of a nitride semicOnductOr is cArrIed out.
OwiNg tO The Absence of EithEr a lattice-MatChiNg subStrATe or a SubsTRaTe oF A low dIsloCAtion densITy In tHE VaPor phase groWTH TecHnoloGy oF A galliUm niTride compound semiCOnductor, there iS knoWN A teChnIQue wHeRein after deposItiOn OF A buffer lAyEr of AlN or AlXGa1xe2x88x92N, In WHich 0xE2x89xa6x lEss thaN 1, on a subSTRaTE such aS of sAppHire at a loW teMpERature oF 900xC2x0
 exclusive listing of theobjectives  or b ene fit sof t he p resent inventi o n. N ot all of these object ivesar e  nec e ss arily  met in ea c h  ap pa ra tus  o r  m ethod  of  the pr esent inve nti on . Apparatuso rmethods of  th e present in ven tion m ay  me e t oradd ressone or more,but lessth a n all, of thes e ob ject s or other object s  o r  benefits of t he inv en t io n app are nt in othe rparts of this de s c r ipt i on. Therefore , these obj e cti ves ar enot presen ted f or ,  an d should no t be  used for , thep urposeo f limit ing th e s cop e of th einv en t ion as  se t  fo rth in t he  a ppend ed c l a i m s. T his  rel atesgenerally toele ctro n icdevic es an d, m or e par ticula rly,to  electronic dev ices  with org ani clig ht -emit t ing di ode  di splays. 
Electr o nic  d e v i ce s often include di sp l a ys . For ex ample, an  e l ectronic  d evi ce m a y  have  ano rg anic lig ht-emi t ti ng  diodedi splaywi throw s and colu mns of  display  pixe l s. The display pixels may ea c hh a ve subp ixe ls with res pect i ve r ed,b lu e,a nd gr een c ol o rf ilter elements. The re  can b e non -negligible a mounts ofo p t ical abs orpt i on in the color f ilter  materialo f red, b lue,and gree n subpixe l s , so som e d esi gns  in c o rp orate white s u b pixe ls . Pixel  re ndering  op era tio nsma y covertred-gree n- bl ue  d ata  to r e d-green- bl ue- wh ite  data to ens ure t hatth ew hit e subpi x el s arefr eq uent lyus ed. T hish elp s reduc e power c ons u mpti on ,because  the white su bp ixels aremo reeffici e n t at emi tting light than the co l ored su bpi xels.  How ever, the  wh ite li ght emitte d from  a wh it e o r g anicl i gh t-e mi tting diod e sub pixel  m ay h ave whi te point color coo r din ates that donot  mat c h  t arg e tw hit ep oin t color coordinat es, leadin gt oimages tha t  ar ecolored  differ ently than de sired.
It  would th er efor e bedesirableto be ab le to pro v ide i m pr oveddis playssu chas im proved org aniclight- em itting  diod edisplays . The present applicati on cla ims p rio rity of J apa n ese  Applicat ionNo. P2000- 217 911  file d J u l. 18 , 20 0 0,  wh i ch ap plic a tion is i n co rpo r a te d herein by r e fer encetot he ext entpermitted by law. This invention  rel a t estoa  cry st al growth meth odad a p ted forus e in the fo rmationof semic onduct or lig ht-emit t i ng device s an d m ore parti cul ar l y, to a  c ry s tal gr owth  m ethodwherei n  sel e c tive crystal gro wth o f a nit r ide  semi co nductor is c arried out .
Owing tothe ab senc e ofeitheralattic e-m at ching subs t rate or a  subs trate o fa lo w d isloca tion d ensit y in  t hevapor pha s e  g r ow th tec hnol ogy o fa ga llium nit r ide comp oun d  semico nd uct o r , ther e  i s known a te chn iquew h erein afte r  dep o si t ion o f a bu ffer l ayer of AlN  o r AlxGa 1xe 2 x 88x92N, i n which 0 x e2x 89 xa6x  less th an  1,on  asu bstrate such as  of sapp hire ata low te mpe r atur e  of 90 0x c2x0
 exclusive_listing of_the objectives or benefits_of the_present_invention. Not_all_of these objectives_are necessarily met_in each apparatus or_method of the_present_invention. Apparatus or methods of the present invention may meet or address one or_more,_but less_than_all,_of these objects or other_objects or benefits of the_invention apparent_in other parts of this description. Therefore, these_objectives_are not presented_for, and should not be used for, the purpose_of limiting the scope of the_invention as set_forth_in_the appended claims. This_relates generally to electronic devices and,_more particularly, to electronic devices with_organic light-emitting diode displays.
Electronic devices often include_displays. For example, an electronic device_may have an organic light-emitting_diode display_with rows and columns of_display pixels. The_display pixels_may each have_subpixels with respective red, blue, and_green color filter_elements. There can be non-negligible amounts_of_optical absorption in_the_color_filter material_of red, blue,_and_green subpixels,_so_some designs incorporate white subpixels. Pixel_rendering_operations may covert red-green-blue data to red-green-blue-white_data to ensure that_the_white subpixels are frequently_used. This helps reduce power_consumption, because the white subpixels are_more efficient_at emitting_light than the colored subpixels. However, the white light emitted from_a white organic light-emitting diode subpixel_may have white point_color coordinates_that_do not match_target_white point_color coordinates, leading to images that are_colored differently_than desired.
It would therefore be desirable_to be able to_provide_improved displays such as improved organic_light-emitting diode displays. The present application_claims priority of Japanese Application_No._P2000-217911_filed Jul. 18, 2000, which_application is incorporated herein by reference_to the extent_permitted by law.
This invention relates to a_crystal_growth method adapted for use in_the_formation of semiconductor light-emitting devices and_more_particularly,_to a crystal growth method_wherein selective crystal growth of a_nitride semiconductor is carried out.
Owing to the absence of_either a lattice-matching_substrate or a substrate of_a_low_dislocation density in the vapor phase growth technology of a_gallium nitride_compound semiconductor, there_is known a technique wherein after deposition of a buffer_layer of AlN or AlxGa1xe2x88x92N, in which_0xe2x89xa6x less than 1, on a substrate such as of sapphire_at a low temperature of 900xc2x0