la, J. C. Campbell, C. Tsai and C. Lei, Electron Lett. 27, 2125 1991!; U. Prank, M/Mikulla and W. Kowalsky, Appl. Phys. Lett 62, p.129 1993!. Some communication equipment is capable of processing only voice signals, while other more complex equipment processes both voice signals and image signals. Recently, more communication equipment is cable of possessing both voice signals and image signals at the same time. Accordingly, a semiconductor device for an image sensor that can process image signals is in increasing demand, and its importance is gradually increasing.
FIGS. 1A to 1E are cross-sectional drawings illustrating a procedure of fabricating a semiconductor device for an image sensor according to the related art.
Referring to FIG. 1A, an insulating material may be deposited on semiconductor substrate 102 and may form lower insulating film 104 on the entire surface of semiconductor substrate 102. A photoelectric element and a logic circuit may be formed in semiconductor substrate 102.
Referring to FIG. 1B, an insulating material may be deposited on lower insulating film 104 to form upper insulating film 106. During the formation of upper insulating film 106, a metal interconnection (not shown) may be formed. That is, after upper insulating film 106 may be formed, via holes or contact holes may be formed. Then, metal may be buried in the formed via holes or contact holes and the metal interconnection may be formed by performing a planarization process such as a CMP process. Accordingly, upper insulating film 106 may be formed to be flat.
Referring to FIG. 1C, a photoresist may be coated on the entire surface of semiconductor substrate 102. Then, an exposure process may be performed using a mask to selectively remove a portion of the photoresist, thereby forming a photoresist pattern.
Further, color filters 108, which may have a specified pattern, may be formed on upper insulating film 106 using the photoresist pattern.
Referring to FIG. 1D, a photoresist may be coated on semiconductor substrate 102, Planarization layer 110 may be formed over color filters 108.
Referring to FIG. 1E, a photoresist may be coated on semiconductor substrate 102. An exposure process may then be performed using a mask to selectively remove a portion of the photoresist, thereby leaving the photoresist only at positions corresponding to color filters 108 formed below the photoresist, i.e., on the portions where color filters 108 may be formed.
Next, a heat
la, J. C. Campbell, C. Tsai and C. Lei, Electron Lett. 27, 2125 1991! ; U. Prank, M / Mikulla and W. Kowalsky, Appl. Phys. Lett 62, p.129 1993! . Some communication equipment is capable of processing only voice signal, while early more complex equipment processes both voice signal and picture signals. Recently, more communication equipment is cable of possess both voice signals and persona signals at the same prison term. Accordingly, a semiconductor device for an effigy detector that can process image signal is in increasing demand, and its importance is gradually increase. 
 FIGS. 1A to 1E are cross - sectional drawings illustrating a routine of fabricating a semiconductor device for an image sensor harmonize to the related art. 
 Referring to FIG. 1A, an insulating material may be deposited on semiconductor substrate 102 and may imprint lower insulating film 104 on the entire surface of semiconductor substrate 102. A photoelectric element and a logic circuit may be formed in semiconductor substrate 102. 
 Referring to FIG. 1B, an insulating material may be deposited on lower insulating film 104 to form upper insulating film 106. During the constitution of upper insulating film 106, a metal interconnection (not show) may be form. That is, after upper insulating film 106 may be formed, via holes or liaison holes may be form. Then, metal may be buried in the form via holes or contact holes and the metal interconnection may be formed by performing a planarization summons such as a CMP process. Accordingly, upper insulating film 106 may be formed to be compressed. 
 consult to FIG. 1C, a photoresist may be coated on the entire surface of semiconductor substrate 102. Then, an exposure procedure may be performed using a mask to selectively absent a portion of the photoresist, thereby forming a photoresist pattern. 
 Further, coloring material filters 108, which may take a specified form, may be formed on upper insulating movie 106 using the photoresist pattern. 
 Referring to FIG. 1D, a photoresist may be coated on semiconductor device substrate 102, Planarization layer 110 may be formed over color filter 108. 
 Referring to FIG. 1E, a photoresist may be coat on semiconductor substrate 102. An photograph process may then be performed using a mask to selectively remove a part of the photoresist, thereby leaving the photoresist only at position corresponding to color filter 108 formed below the photoresist, i.e., on the portions where color filter 108 may be formed. 
 Next, a heat
la, U. C. Campbell, C. Tsai and G. Lei, Electron Lgtr. 27, 2125 1991!; U. Prank, M/Mikullx and W. Kowalsky, Appl. Phys. Lxtt 62, p.129 1993!. Sime communication equioment is bapable od prixessing only voice signamd, whnlx other more cokplex equi[ment processev coch voice signals and image signals. Rqcently, mlre communicatyon tquypmehn ls cable of possessing both voics signans and image xignals at the same time. Afcorfingly, a semiconduftor device for qn image senror that can process ijage signals is in increasing ddmand, and its inpirtwtce is gradnally pncreasing.
FIGS. 1A to 1E are crpss-sectional dvawinjs iolustrating a proceduce of fabricating a femiconduwtkr device for an umqge sgnsor accuedivg uo vhe relatfd ert.
Referrinf to FIG. 1A, qn insulating materoaj may be deposjted og femiconductor substrate 102 and may form lmwed insulating film 104 on tye entire surface of demicondustor substrate 102. A photoelectric element and a loghc ciccjit mwh bf formed in semiconductor substrate 102.
Referring fo FPG. 1B, an insulatinn material may be ceooxyted on lower insulcfihg film 104 to form uoper infulatung film 106. Durong the formation of upper unsulating fplm 106, a metal interconnzction (not skown) msy be formed. That is, after u'per ihsulating fllm 106 may gd formed, via holds pr contact holes may be formqd. Then, mxtal kay be curigd in tre formed gia holes or contact holfs anb the metal intfrconnection may be formed by pxcforming a plsndridation prjcess such as a CM[ process. Accotdingly, u'per ivsulating rilm 106 mey be formed to be flat.
Rexgrring to FIG. 1C, a phoeorewist may be zoated on the rntire sugfcce of seniconductor substrete 102. Fhen, an exposurz kricess may be prrfurmqd uxigc a mask to veleztixrly rdmove a porbiov of the photoresist, theseby forming a photorexift pattetn.
Further, color filterx 108, which may have w sperified pattrrn, may be formed on upper insulafing film 106 ufing the phoeorewist pattern.
Xeferring to FIG. 1D, a photoresist may be roated on semiconductot substrate 102, Planarizctlon layer 110 mey be sormed ovar color filters 108.
Refwrring to FIG. 1E, a photoresist may be ckated mn seliconductor substrate 102. An exposure process may then be performed using a nask to selectivelg rekove d 'orcion of the 'hotoresist, thereny leaving the photoresist only at posidijns corresponding to color folgers 108 formed celow the photoresist, i.e., on the lortions where color filters 108 msy be formed.
Next, a heat
la, J. C. Campbell, C. Tsai and Electron 27, 2125 U. Prank, M/Mikulla Lett p.129 1993!. Some equipment is capable processing only voice signals, while other complex equipment processes both voice signals and image signals. Recently, more communication equipment cable of possessing both voice signals and image signals at the same time. a device an sensor that can process image signals is in increasing demand, and its importance is gradually increasing. 1A to 1E are cross-sectional drawings illustrating a of fabricating a semiconductor for an image sensor according the art. Referring FIG. an material may be on semiconductor substrate 102 and may form lower insulating film 104 on the entire surface of semiconductor 102. A and a circuit be in semiconductor substrate to FIG. 1B, an insulating material on lower insulating film 104 to form upper film 106. the formation of upper insulating film a metal interconnection (not shown) may be formed. is, after upper insulating film 106 may be formed, via holes or contact holes may Then, metal may be in the formed holes contact and metal interconnection be formed by performing a planarization process such as a CMP Accordingly, upper insulating film 106 may be formed to be to 1C, a photoresist be coated on the surface semiconductor substrate 102. Then, process be mask selectively a portion of the thereby forming a photoresist pattern. color filters 108, which may be formed on upper insulating film 106 the photoresist pattern. Referring to FIG. 1D, photoresist may be coated on semiconductor substrate 102, Planarization layer 110 may formed over 108. Referring to FIG. 1E, a photoresist may coated on semiconductor substrate An exposure process may then be performed using a to remove a of the photoresist, leaving the photoresist at positions corresponding filters 108 below photoresist, portions where color filters 108 may formed. a heat
la, J. C. Campbell, C. Tsai and C. Lei, ELectron LetT. 27, 2125 1991!; U. PraNk, M/mikUlLa anD W. KoWalsky, Appl. Phys. lEtt 62, p.129 1993!. some communication equipMent iS cAPablE Of ProceSsing onLY vOICe sIgNaLs, wHiLE oTher mOre Complex Equipment pRocEsSes both voice SIgNals and imaGe sIgnals. RecentLy, mOre comMuNicATion eQuiPment Is cablE Of possEssing botH vOIce sigNAls and iMAGe SignAls at the same time. ACCoRDingly, a semiconDuctor DeVIcE FOr aN imAge sensor tHaT can pROcess imAGe SIGNalS Is in increasinG demand, and iTS imPortanCe Is gRAduallY incrEaSIng.
fIGS. 1A to 1E are CrosS-sectionaL drawiNGs illusTRating a ProcedUre Of fAbriCAtInG a sEmIConDUcTor DEviCe for an iMaGe SensoR accORDINg to The RelaTed arT.
Referring to FiG. 1A, An inSUlaTing mAteriAl maY bE depoSited oN semiCoNductor substratE 102 and May form loWer InSulAtIng fiLM 104 on the EntIre Surface Of semicONduCtOR SUbStrate 102. A photoelectrIc ELEmEnt and a lOgic ciRCuIt MAy be formEd In sEmicONDuctoR subSTrAte 102.
ReferRing to fiG. 1b, aN insulaTiNg mateRiAl mAy bE depoSIted On loweR insulatIng fiLM 104 to form upper inSUlating film 106. DuRInG THe FOrmaTioN of upper insUlatINg fiLm 106, a mETaL inTErconNectiOn (NOt SHown) may be formed. That Is, After uPper iNsulating film 106 May be formeD, VIA holes or ContACt HOles may be formeD. Then, Metal may be BUried in tHe forMed via hoLes or contACT holes anD thE meTal IntERCoNnection may be FORmed By PerformIng A planarIzaTioN prOceSs Such as a CMp process. acCoRdInGly, Upper INsulatinG fIlm 106 MaY be FormeD To be flAt.
RefErriNg To fiG. 1C, A photorESiST May bE cOaTed oN thE eNtire SurfACe oF semicoNductor suBstRAte 102. THeN, aN exposuRe process may bE pErformed usInG a mAsk to sELEctively Remove a portion of the photOResist, tHerEby foRminG a photoreSisT patteRn.
FURther, cOlor fiLters 108, WhIch MAY have A SPeCifIeD pattern, maY BE foRmed oN uPper InsulatIng film 106 using the phoTOreSist pattern.
ReFerRing TO fIg. 1D, a PHoTOreSiST maY BE coated on semicoNductor subStRAtE 102, PlanarizaTIon LaYer 110 may bE formed Over cOLor filtErs 108.
ReferrIng to FIG. 1E, A pHotoRESisT may be coatEd on semiConductor SUbstrATe 102. an expOsuRe procEsS maY then Be perfORmeD usinG a mask To SelectIvely ReMove a porTion of the photoresist, theReby leAving The PhotoresiSt oNLy aT positionS corResponding To cOloR filtErs 108 FOrmed BeloW ThE phOToresIst, i.E., On the portIOnS whERE cOlor filters 108 MAY Be fOrmed.
nexT, A heat
la, J. C. Campbell, C. Tsa i and C. L ei, E lec tro nLett . 27 , 2125 1991!;U . Pr ank, M/Mikulla and W.Kowal sk y , Ap p l.  Phys . Lett6 2, p .12 919 93! .S om e com mun ication  equipment  is  c apable of pr o ce ssing only  vo ice signals,  wh ile ot he r m o re co mpl ex eq uipmen t  proce sses both  v o ice si g nals an d im agesignals. Recently ,  m o re communicati on equ ip m en t iscab le of poss es singb oth voi c es i g nal s  and image si gnals at th e  sa me tim e.  Ac c ording ly, a  s e mic onductor de vice  for an i mage s e nsor th a t can p rocess  im age  sig n al sisin inc r ea sin g  de mand, an dit s imp orta n c e is g rad uall y inc reasing.
FIGS . 1 A to 1Eare c ross- sect io nal d rawing s ill us trating a proce dure  of fabri cat in g a  s emico n ductor  de vic e for a n image sen so r a cc ording to the rela te d ar t.
Refer ring t o  F IG .  1A, anin sul atin g mater ialm ay  be depo sitedo nse micondu ct or sub st rat e 1 02 an d  may  formlower in sulat i ng film 104 on the entire su r fa c e  o f  sem ico nductor sub stra t e 10 2. A ph oto e lectr ic el em e nt and a logic circuit  m ay beforme d in semicond uctor subs t r a te 102.Refe r ri n g to FIG. 1B,an in sulating m a terial m ay be  deposit ed on low e r  insulat ing  fi lm104 t oform upper in s u lati ng  film 1 06.  During  th e f orm ati on  of upper  insulat in gfi lm  10 6, am etal int er con ne cti on (n o t show n) ma y be  f or m ed.  That i s ,a f terup pe r in sul at ing f ilm1 06may beformed, v iah oles  o rcontact  holes may be  f ormed. The n,  me tal ma y be burie d in the formed via hol e s or co nta ct ho lesand the m eta l inte rco n nectio n maybe fo rm edb y  perf o r mi ngaplanarizat i o n p roces ssuch  as a C MP process. Accord i ngl y, upper insu lat ingf i lm  10 6  m a y b ef orm e d  to be flat.
Re ferring to  F I G.  1C, a pho t ore si st maybe coat ed on the ent ire surfa ce of sem ic ondu c t orsubstrate102. The n, an exp o surep ro cessmay  be pe rf orm ed us ing am ask  to s electi ve ly rem ove a  p ortion o f the photoresist, ther eby fo rming  aphotoresi stp att ern.
Furt her,  color fil ter s 1 08, w hic h  mayhave aspe c ified  pat t ern, mayb efor m e don upper in s u l ati ng fi lm1 06 usi ng t he photoresist pa t tern.
Referrin g to F IG.  1D ,  a p ho toresist may b e c oa t e d on sem ic onductor su bstrate10 2 , Pla nariza tion l ayer 11 0 ma y  be fo rmed  ov er colorfil te r s 108.Re fe r ring t o FI G.  1E, a  photo r esis t may be coated on  semi c o nduct o r s ubstr at e 102.A n ex posure pro cess may th en beperf ormed  usingamask t o s el ectively r e move a po rtion  of the  p hoto res ist, t here b y  leav ingth e p hotoresis t on l yat pos itio ns co rr espo nding toc olor fil ter s  108 fo rm edb e low th e  p h o toresist,i.e ., on t he portion s  whe r ec olorfilter s 108may bef orm ed .
Next,  ah e at
la, J._C. Campbell,_C. Tsai and C._Lei, Electron_Lett._27, 2125_1991!;_U. Prank, M/Mikulla_and W. Kowalsky,_Appl. Phys. Lett 62,_p.129 1993!. Some_communication_equipment is capable of processing only voice signals, while other more complex equipment processes_both_voice signals_and_image_signals. Recently, more communication equipment_is cable of possessing both_voice signals_and image signals at the same time. Accordingly,_a_semiconductor device for_an image sensor that can process image signals is_in increasing demand, and its importance_is gradually increasing.
FIGS._1A_to_1E are cross-sectional drawings_illustrating a procedure of fabricating a_semiconductor device for an image sensor_according to the related art.
Referring to FIG._1A, an insulating material may be_deposited on semiconductor substrate 102_and may_form lower insulating film 104_on the entire_surface of_semiconductor substrate 102._A photoelectric element and a logic_circuit may be_formed in semiconductor substrate 102.
Referring to_FIG._1B, an insulating_material_may_be deposited_on lower insulating_film_104 to_form_upper insulating film 106. During the_formation_of upper insulating film 106, a metal_interconnection (not shown) may_be_formed. That is, after_upper insulating film 106 may_be formed, via holes or contact_holes may_be formed._Then, metal may be buried in the formed via holes or_contact holes and the metal interconnection_may be formed by_performing a_planarization_process such as_a_CMP process._Accordingly, upper insulating film 106 may be_formed to_be flat.
Referring to FIG. 1C, a_photoresist may be coated_on_the entire surface of semiconductor substrate_102. Then, an exposure process may_be performed using a mask_to_selectively_remove a portion of the_photoresist, thereby forming a photoresist pattern.
Further,_color filters 108,_which may have a specified pattern, may_be_formed on upper insulating film 106_using_the photoresist pattern.
Referring to FIG. 1D,_a_photoresist_may be coated on semiconductor_substrate 102, Planarization layer 110 may_be formed over color filters 108.
Referring to FIG. 1E,_a photoresist may_be coated on semiconductor substrate_102._An_exposure process may then be performed using a mask to_selectively remove_a portion of_the photoresist, thereby leaving the photoresist only at positions corresponding_to color filters 108 formed below the_photoresist, i.e., on the portions where color filters 108 may be_formed.
Next, a heat