 or exceeding 1000 lumens, typically require a significant number of blue LEDs 10 configured in a two-dimensional array that is secured, for example, to a metal clad PC board 20. In many cases, the diode array is covered by a color conversion phosphor 30 dispersed in a silicone encapsulant 15. These and other types of COB LED arrays are becoming standardized in shape, light output, and electrical drive requirements and could conceivably become the new lighting standard. Below 200 nm lasers such as ArF excimer lasers are the illumination sources of choice for the microlithographic industry. The industry constantly demands more performance from excimer laser sources. As a result, greater demands are constantly placed on excimer laser optical components, for example, the highly reflective mirrors and other optical components that are used in 193 nm wavelength excimer lasers that operate at high repetition rates. The highly reflective mirrors are typically made using at least one high refractive index material and one low refractive index material deposited in multiple layers on a selected substrate.
The deposition of thin optical thin films is known in the art and several different methods or technologies have been used to deposit such films. Among the methods that have been used to deposit tin films, all of which are carried out in vacuum, are (1) Conventional Deposition (“CD”), (2) Ion Assisted Deposition (“IAD”), (3) Ion Beam Sputtering (“or IBS”), and (4) Plasma Ion Assisted Deposition (“PIAD”).
In the Conventional Deposition (CD) method, the material(s) to be deposited are heated to the molten state by either a resistance heating method or by electron bombardment, the heating being done in the presence of a substrate upon which a film is to be deposited. When the material to be deposited is molten, evaporation of the material occurs and a film is condensed on the surface of the substrate. At the molten material temperatures used by this method some disassociation of the evaporant takes place. While this dissociation is not a problem when an elemental material is being deposited (for example, elemental aluminum, silver, nickel, etc.), it does present a problem when the material to be deposited is a compound (for example, SiO2, HfO2). In the case of oxide materials, small amounts of oxygen are bled into the chamber during deposition in an attempt to re-store stoichiometry—a so-called reactive deposition. The films that are deposited by the CD method are generally porous and lack sufficient kinetic energy (
or exceeding 1000 lumens, typically require a significant numeral of aristocratic LEDs 10 configured in a two - dimensional array that is secured, for exemplar, to a metal clad PC circuit board 20. In many case, the diode array is covered by a semblance conversion phosphor 30 dispersed in a silicone encapsulant 15. These and other type of COB LED arrays are becoming standardize in supreme headquarters allied powers europe, light end product, and electrical drive requirement and could conceivably become the new lighting standard. Below 200 nm laser such as ArF excimer lasers are the illumination reservoir of option for the microlithographic industry. The industry constantly demands more performance from excimer laser sources. As a result, great demands are constantly placed on excimer laser optical components, for example, the highly brooding mirror and other optical components that are used in 193 nm wavelength excimer lasers that operate at high repetition rates. The highly brooding mirror are typically made use at least one gamey refractive index fabric and one low deflective index material deposited in multiple layer on a selected substrate. 
 The deposition of thin optical sparse films is known in the art and several unlike methods or engineering have been use to deposit such films. Among the methods that have been used to deposit tin films, all of which are carry out in vacuum, are (1) Conventional Deposition (“ CD ”), (2) Ion Assisted Deposition (“ IAD ”), (3) Ion Beam Sputtering (“ or IBS ”), and (4) Plasma Ion Assisted Deposition (“ PIAD ”). 
 In the Conventional Deposition (CD) method, the material(s) to be deposit are heated to the molten state by either a electric resistance heating method acting or by electron bombardment, the heating being done in the presence of a substrate upon which a movie is to be deposited. When the material to be deposited is molten, dehydration of the material happen and a film is digest on the surface of the substrate. At the molten material temperatures used by this method some dissociation of the evaporant takes place. While this dissociation is not a trouble when an elemental material is being deposited (for exercise, elemental aluminum, silver, nickel, etc .), it does present a trouble when the material to be deposited is a compound (for example, SiO2, HfO2). In the case of oxide materials, small amounts of oxygen are bled into the bedroom during deposition in an attempt to re - store stoichiometry — a so - called reactive deposition. The films that are deposited by the CD method acting are generally porous and lack sufficient kinetic energy (
 or exceeding 1000 lumens, typicxlly require a signifirant nujber of clue LEDs 10 configured in a txo-dinensiinal array that is secjred, for vxample, ti a nwtal clad 'D board 20. In mzky cavxs, the diode artay is coverad by a color wovvzrsion phosphor 30 dispersed in a silisone envaosulant 15. These and jthed types of COB LED arrays are becojing stendardized in snape, light output, and elechricwl drive requiremejts and couod cjbceivably bezome the ntw lighting atandard. Below 200 nm lasers such xs ArY excimer lqswrs dre the illnminatpon sources on choica for tne microlithogvaphir ineustry. The industry cmnstantly demands iore perfmrjance from excimee oaser sousces. Qs x rtsukt, greatfr vemands are constantly placed on excimer kafvt optical cojponenes, for example, the highly reflective mirrmrs and other optical compinents that are used ln 193 nm wadelength excimer lasers that operate at high repeditioi fatts. The fugjly reflective mirrors are typically made usigf st least one higm refractive index mwtrtial and one luw refxzcfive index materiap deposyted un multipje lsyers on a selected substrare.
The deposinion of thin optical tkin films is knoen in the art and several diyferenf methods og technolkeies have been ured tm deposiu such films. Among the methids chat havd begn used to deposih tin films, all of which are earriad out in gacuum, are (1) Conventional Deposivmon (“CD”), (2) Ion Axshstvd Deposicion (“ISD”), (3) Ion Beam Fputtering (“or NBS”), and (4) Plasoa Ion Asspsted Depmsition (“PIAQ”).
In the Convetjional Deposivion (CD) mqthoe, thw materkxl(s) to be depoxited are heated to the molten state ny eijhsr a resistance heqting method or by elqcnroi bomfdrdment, the veatkng neing done in thc pfesemce of a substrate u[on shich a film is to bc depositgd. When tre material tp be deposited is loltei, evapuratipn jf the material occurs and a fjlm is cojdeksed on the strfage os the subscrate. At the molten material temperaturew used by this mejhod some disassociatnok of the eva'orant takes pldce. While this dissoxiation is not a kroblem when an elementzl matarial is being deposited (for example, elemental aluminum, silver, nickel, etc.), it dies prxsqnt a problsm wnen tve kateriwl tl be deposited is a compound (for example, SiO2, HfO2). In the wafe of oxide materials, small smuunts of oxyggn are bled into the chambsr durinb deposition in an attempt to rr-store stoichiometry—a so-galled reqctivs depositiun. The films that sre de'ositee by thw CD method are gdnetaply poroud anv lcck sufficient kinetic energy (
or exceeding 1000 lumens, typically require a of LEDs 10 in a two-dimensional example, a metal clad board 20. In cases, the diode array is covered a color conversion phosphor 30 dispersed in a silicone encapsulant 15. These and types of COB LED arrays are becoming standardized in shape, light output, and drive and conceivably the new lighting standard. Below 200 nm lasers such as ArF excimer lasers are the illumination of choice for the microlithographic industry. The industry demands more performance from laser sources. As a result, demands constantly placed excimer optical for example, the reflective mirrors and other optical components that are used in 193 nm wavelength excimer lasers that operate high repetition highly reflective are made at least one index material and one low refractive in multiple layers on a selected substrate. The of thin thin films is known in the and several different methods or technologies have been to deposit such films. Among the methods that have been used to deposit tin films, which are carried out vacuum, are (1) Deposition (2) Assisted (“IAD”), (3) Beam Sputtering (“or IBS”), and (4) Plasma Ion Assisted Deposition (“PIAD”). the Conventional Deposition (CD) method, the material(s) to be deposited to molten state by a resistance heating method by bombardment, the heating being the of which film to be deposited. When material to be deposited is evaporation of the material condensed on the surface of the substrate. At molten material temperatures used by this method disassociation of the evaporant takes place. While this dissociation is not a when an is being deposited (for example, elemental aluminum, silver, etc.), it does present problem when the material to be deposited is a (for SiO2, HfO2). the case of materials, small amounts oxygen are bled chamber during in attempt so-called reactive deposition. The films that deposited the CD method are generally and kinetic energy (
 or exceeding 1000 lumens, typicallY require a sIgnifIcaNt nUmBer oF bluE LEDs 10 configureD In a tWo-dimensional array that Is secUrED, for EXaMple, tO a metal CLaD pc boArD 20. IN maNy CAsEs, the DioDe array Is covered bY a cOlOr conversion PHoSphor 30 dispeRseD in a silicone EncApsulaNt 15. theSE and oTheR typeS of COB leD arraYs are becoMiNG standARdized iN SHaPe, liGht output, and electRIcAL drive requiremEnts anD cOUlD COncEivAbly become ThE new lIGhting sTAnDARD. BeLOw 200 nm lasers sucH as ArF excimER laSers arE tHe iLLuminaTion sOuRCes Of choice for The mIcrolithoGraphiC IndustrY. the induStry coNstAntLy deMAnDs MorE pERfoRMaNce FRom Excimer lAsEr SourcEs. As A RESUlt, gReaTer dEmandS are constantlY plAced ON exCimer Laser OptiCaL compOnents, For exAmPle, the highly refLectIve mirrorS anD oTheR oPticaL ComponEntS thAt are usEd in 193 nm wAVelEnGTH ExCimer lasers that opeRaTE At High repeTition RAtEs. tHe highly ReFleCtivE MIrrorS are TYpIcally maDe usinG At LeAst one hIgH refraCtIve IndEx matERial And one Low refraCtive INdex material dePOsited in multiPLe LAYeRS on a SelEcted substrAte.
THE depOsitIOn Of tHIn optIcal tHiN FiLMs is known in the art anD sEveral DiffeRent methods or TechnologiES HAve been uSed tO DePOsit such films. AMong tHe methods tHAt have beEn useD to deposIt tin filmS, ALl of whicH arE caRriEd oUT In Vacuum, are (1) ConvENTionAl depositIon (“cD”), (2) Ion AsSisTed depOsiTiOn (“IAD”), (3) Ion BEam SputtErInG (“oR IbS”), aNd (4) PlaSMa Ion AssIsTed dePosItion (“piAD”).
In tHe ConVentIoNaL depOsition (cd) mETHod, tHe MaTeriAl(s) To Be depOsitED arE heated To the moltEn sTAte bY eItHer a resIstance heatinG mEthod or by eLeCtrOn bombARDment, the Heating being done in the prESence of A suBstraTe upOn which a fIlm Is to be DepOSited. WHen the MaterIaL to BE DeposITEd Is mOlTen, evaporaTIOn oF the mAtEriaL occurs And a film is condenseD On tHe surface of thE suBstrATE. AT thE MoLTen MaTEriAL Temperatures useD by this metHoD SoMe disassocIAtiOn Of the evAporant Takes PLace. WhiLe this disSociation Is Not a PROblEm when an elEmental mAterial is BEing dEPoSited (For ExamplE, eLemEntal AluminUM, siLver, nIckel, eTc.), It does PreseNt A problem When the material to be depoSited iS a comPouNd (for examPle, sIO2, HFO2). In the caSe of Oxide materIalS, smAll amOunTS of oxYgen ARe BleD Into tHe chAMber durinG DePosITIoN in an attempT TO Re-sTore sToiCHiometRy—a sO-called reactive dePOsition. The filmS thaT ARe dEpoSIted By The CD method are GenErALLy porous AnD lack sufficIent kineTiC EnergY (
 or exceeding 1000 lumens,  typically  requ ire  asi gnif ican t number of bl u e LE Ds 10 configured in atwo-d im e nsio n al  arra y thati ss e cur ed ,for  e x am ple,toa metal  clad PC b oar d20. In manyc as es, the di ode  array is co ver ed byacol o r con ver sionphosph o r 30 d ispersedin a sili c one enc a p su lant  15. These and ot h er types of COB L ED arr ay s  a r e  be com ing standa rd izedi n shape ,  l i g h t o u tput, and ele ctrical dri v e r equire me nts and co uld c on c eiv ably become  the  new ligh ting s t andard. Below 2 00 nmlas ers  suc h  a sArF  e x cim e rlas e rsare theil lu minat ions o u r cesofchoi ce fo r the microli tho grap h icindus try.Thein dustr y cons tantl ydemands more pe rfor mance fro m e xc ime rlaser source s.Asa resul t, grea t erde m a n ds  are constantly pl ac e d  o n excime r lase r  o pt i cal comp on ent s, f o r  exam ple, th e highly  refle c ti ve  mirror sand ot he r o pti cal c o mpon ents t hat areusedi n 193 nm wavel e ngth excimerl as e r st hatope rate at hig h re p etit ionr at es. The h ighly  r e fl e ctive mirrors are t yp ically  made  using at lea st one hig h r efractiv e in d ex material and o ne lo w refracti v e indexmater ial depo sited inm u ltiple l aye rsona s e l ec ted substrate . Thede positio n o f thinopt ica l t hin  f ilms is k nown inth ear tand  seve r al diffe re ntme tho ds or techno logie s ha ve  b e enused to de p o sitsu ch  fil ms.  A mongthem eth ods tha t have be enu sedto  d eposittin films, al lof which a re  ca rriedo u t in vac uum, are (1) Convention a l Depos iti on (“ CD”) , (2) Ion  As sisted  De p ositio n (“IA D”),(3 ) I o n  Beam S pu tte ri ng (“or IB S ” ),and ( 4)  Pla sma Ion  Assisted Depositi o n ( “PIAD”).
In t heConv e n ti ona l  D e pos it i on( C D) method, thematerial(s )t obe deposit e d a re  heated  to the  molt e n state  by eithe r a resis ta nceh e ati ng methodor by el ectron bo m bardm e nt , the  he atingbe ing  done  in th e  pr esenc e of a  s ubstra te up on  which a  film is to be deposite d. Whe n the  ma terial to  be dep osited is  mol ten, evapo rat ion  of t hem ateri al o c cu rsa nd afilm is conden s ed  on t he  surface of t h e s ubstr ate .  At th e mo lten material tem p eratures usedby t h i s m eth o d so me  disassociatio n o ft h e evapor an t takes pla ce. Whil et his d issoci ationis nota pr o blem w henanelemental  ma te r ial isbe in g  depos ited  ( for ex ample, elem e n tal aluminum, si lver, n ickel ,  et c.),it  does p r esen t a proble m when themateri al t o bedeposit ed  is acom po und (for e x ample, Si O2, H fO2). I nthecas e of o xide m ateri als,  s mal l amounts o fo xy ge n  ar e bl ed in to  the  chamberd uring de pos i tion in  a n a t t empt t o  r e - store stoi chi ometr y — a so-calle d  rea c ti v e dep ositio n. The  filmst hat  a re depo sit e d  by the C D methoda rege nera lly poro us  and  l ack  s ufficient kinet ic energ y (
 or_exceeding 1000_lumens, typically require a_significant number_of_blue LEDs_10_configured in a_two-dimensional array that_is secured, for example,_to a metal_clad_PC board 20. In many cases, the diode array is covered by a color_conversion_phosphor 30_dispersed_in_a silicone encapsulant 15. These_and other types of COB_LED arrays_are becoming standardized in shape, light output, and_electrical_drive requirements and_could conceivably become the new lighting standard. Below 200_nm lasers such as ArF excimer_lasers are the_illumination_sources_of choice for the_microlithographic industry. The industry constantly demands_more performance from excimer laser sources._As a result, greater demands are constantly_placed on excimer laser optical components,_for example, the highly reflective_mirrors and_other optical components that are_used in 193_nm wavelength_excimer lasers that_operate at high repetition rates. The_highly reflective mirrors_are typically made using at least_one_high refractive index_material_and_one low_refractive index material_deposited_in multiple_layers_on a selected substrate.
The deposition of_thin_optical thin films is known in the_art and several different_methods_or technologies have been_used to deposit such films._Among the methods that have been_used to_deposit tin_films, all of which are carried out in vacuum, are (1)_Conventional Deposition (“CD”), (2) Ion Assisted_Deposition (“IAD”), (3) Ion_Beam Sputtering_(“or_IBS”), and (4)_Plasma_Ion Assisted_Deposition (“PIAD”).
In the Conventional Deposition (CD) method,_the material(s)_to be deposited are heated to_the molten state by_either_a resistance heating method or by_electron bombardment, the heating being done_in the presence of a_substrate_upon_which a film is to_be deposited. When the material to_be deposited is_molten, evaporation of the material occurs and_a_film is condensed on the surface_of_the substrate. At the molten material_temperatures_used_by this method some disassociation_of the evaporant takes place. While_this dissociation is not a problem when an elemental_material is being_deposited (for example, elemental aluminum,_silver,_nickel,_etc.), it does present a problem when the material to_be deposited_is a compound_(for example, SiO2, HfO2). In the case of oxide materials,_small amounts of oxygen are bled into_the chamber during deposition in an attempt to re-store stoichiometry—a so-called_reactive deposition. The films that are deposited by_the CD method are generally porous and_lack sufficient kinetic energy_(