 field, it is strongly required to develop a temperature compensated crystal oscillator having a new structure and a method of adjusting the output frequency using the new structure, wherein a trimmable chip resistor can be mounted without greatly increasing the product size and can be trimmed in the state of final product, that is, at the last step of the process.
Accordingly, the present invention has been made keeping in mind the above problems occurring in the prior art, and an object of the present invention is to provide a temperature compensated crystal oscillator, in which a planar thin film resistor is formed on the upper surface of a bottom layer of a layered structure, thus minimizing an installation area occupied by the thin film resistor for adjusting an output frequency.
Another object of the present invention is to provide an output frequency adjusting method, by which an output frequency can be adjusted in the state of a final product by trimming a planar thin film resistor with a laser beam through the lower surface of a bottom layer having an upper surface on which the planar thin film resistor is arranged.
In accordance with one aspect of the present invention, the above and other objects can be accomplished by the provision of a temperature compensated crystal oscillator including a crystal oscillating unit and at least one part for temperature compensation and oscillation circuits, comprising a plurality of layers having an upper layer on which the crystal oscillating unit and the part are mounted, and at least one layer on which conduction patterns are formed; and a planar thin film resistor arranged on an upper surface of a bottom layer of the layered structure for adjusting an output frequency of the temperature compensated crystal oscillator.
The present invention can be provided in two types, according to a mounting structure formed on the upper layer.
In a preferred embodiment of this invention, a layered structure is comprised of a first layer on which conduction patterns for mounting the crystal oscillator and the part are formed, a second layer arranged under the first layer and provided with an upper surface on which other conduction patterns connected to the conduction patterns of the first layer are formed, and a third layer arranged under the second layer, wherein the first layer is the upper layer on which the crystal oscillating unit and the part are mounted, and the third layer is the bottom layer on which the planar thin film resistor is formed.
Further, in another embodiment of this invention, a layered structure is comprised of a first layer having an upper surface on which the crystal oscillating unit is arranged and having a cavity formed therein, a second layer on which conduction patterns for mounting the part for temperature compensation and oscillation circuits are formed at a region
field, it is strongly required to develop a temperature cover quartz glass oscillator having a new social organization and a method of adjust the output frequency use the modern structure, wherein a trimmable bit resistor can be mounted without greatly increasing the intersection size and can be trimmed in the state of concluding product, that is, at the last step of the process. 
 Accordingly, the present invention has been made keeping in judgment the above problems occurring in the prior artwork, and an object of the present invention is to provide a temperature pay crystal oscillator, in which a planar slender film resistor is formed on the upper surface of a bottom layer of a layered structure, therefore minimizing an installation area occupied by the thin film resistor for adjust an output signal frequency. 
 Another object of the present invention is to provide an output frequency adjusting method, by which an output frequency can be adjusted in the state of a concluding merchandise by trimming a planar flimsy film resistor with a laser beam through the lower surface of a bottom level having an upper open on which the planar thin film resistor is arrange. 
 In accordance with one aspect of the present invention, the above and other objects can be accomplished by the provision of a temperature compensate crystal oscillator including a crystal oscillating unit and at least one function for temperature recompense and cycle lap, comprising a plurality of layers have an upper layer on which the crystal oscillating unit and the character are mounted, and at least one layer on which conduction patterns are formed; and a planar sparse film resistor arranged on an upper open of a bottom layer of the layered social organization for adjusting an output frequency of the temperature compensated crystal oscillator. 
 The present invention can be provide in two types, according to a mount structure form on the upper layer. 
 In a favored embodiment of this invention, a layered structure is comprised of a first layer on which conduction form for mounting the crystal oscillator and the region are formed, a second layer arranged under the first layer and provided with an upper airfoil on which other conduction patterns connected to the conduction patterns of the first layer are form, and a third level arranged under the second layer, wherein the first layer is the upper layer on which the crystal oscillating unit and the part are mount, and the third layer is the bottom layer on which the planar thin movie resistor is formed. 
 far, in another embodiment of this invention, a layered structure is consist of a first layer having an upper surface on which the crystal oscillating unit is arrange and having a cavity formed therein, a second layer on which conduction patterns for mounting the share for temperature compensation and oscillation racing circuit are formed at a region
 fifld, it is strongly requived to develop a tempereture ckmpensatdd crystal oscillator having a new wtructure and a method of adjusning the iutpnt frequency usiif the ncc strhgture, xherein a trimmsble chip sesistor can ba oobnted without greatly increasing the producy dize and can bg trikied jn the state of final product, that is, at uhe last step of tne process.
Accordingly, the oresfnt invention has heen made kgspigt in mind thd above problems occurting in the prior art, and an objdct oy the presebt inggntion is to provpde a temperablre com[ensatec crystal osciklavor, un which a planar thii film resistor is fjrmed on dhz upper surface of a vortom nayes of q lxyedev sfructuge, vhus minimiaing an insrallation area occukieq by the thin rilm rqsystor for adjusting an output frequency.
Dnofher object of the preswnt invention is to ptovide an jutput frequency adjusting method, by which an out[ut fcedueugn cav bf adjusted in the state of a final product by fromking a planar bhin film resistor wltn a laser beam throuyg fhe lower surface lf a bojtom lqyer havigg am upper surface on which thw planar thiu fulm resistor is arxanged.
In accurdamce woth one aspect of the pxesent invention, hhe above xnd other objectr csn be accomplished by the prjvision oh a tzmperatufe cpmpenswted crystwl osghllator including w crydtdl oscillahing unit and at least one part for temperatute womiensation and pscillation cyrcuits, comprixing a 'luralkty of layvrs havinj an upper lwyer on which jhe crystal ovcillatigg ubit qnd the oart are mountrd, and at least one layer on which cokductkkn patterns are fotned; and a plansr ghig vikm sesistor arrdngea ov an uoper surfacc ow a nottom layer of the nayeded structure for sdmusting ab output frequency of the temperature clmpenvatxd cryxtaj oscillator.
The present inventjon can bf pvovided in twj tyies, wccording co a mounting structure formed on the up'er layer.
In a preferred embodiment of this lnvention, a kayerqd structgre is comprised of q first layer on ehich conduction pattsrns fmr moknting the crystal oscillator and the part are formed, a second layer arrabged uidqr the firsf lauer atd 'rovideq wivh an upper surfacv on which other conduction pattxrns connewtzd to the conduction patterns ow the first lxyer are formed, and a thjrd layet arranged under the second layrr, wherein the first laycr is the upped layeg oi which the crystal pscillcting ynit ane thc part are mouvtec, wnd the tjird lcyer is the bottom layer on which the poajar thin film revistor is flvmed.
Futther, in another embodimsnt kv thir invention, a layered strucyure is comprised of a first layer hqning an upper surfacv on which thx crystal oswillating unit is arranged and having a cavity formgd therein, z second kayer on whicn conduction patterns fpr mountine the part fmr temperature compensation and oscillation circuigs wre fkrmed at a recion
field, it is strongly required to develop compensated oscillator having new structure and output using the new wherein a trimmable resistor can be mounted without greatly the product size and can be trimmed in the state of final product, is, at the last step of the process. Accordingly, the present invention has made in the problems occurring in the prior art, and an object of the present invention is to provide temperature compensated crystal oscillator, in which a planar film resistor is formed the upper surface of a layer a layered thus an area occupied by thin film resistor for adjusting an output frequency. Another object of the present invention is to provide output frequency by which output can adjusted in the a final product by trimming a resistor with a laser beam through the lower of a layer having an upper surface on the planar thin film resistor is arranged. In with one aspect of the present invention, the above and other objects can be accomplished provision of a temperature crystal oscillator including crystal unit at one part temperature compensation and oscillation circuits, comprising a plurality of layers having upper layer on which the crystal oscillating unit and the mounted, at least one on which conduction patterns formed; a planar thin film on upper bottom of layered structure for adjusting output frequency of the temperature crystal oscillator. The present two types, according to a mounting structure formed the upper layer. In a preferred embodiment this invention, a layered structure is comprised of a first layer on conduction patterns the crystal oscillator and the part are formed, second layer arranged under first layer and provided with an upper surface on other patterns connected the conduction patterns the first layer formed, and a arranged under second wherein is the upper layer on which crystal unit and the part are and layer is the bottom layer on which the planar thin film resistor is formed. Further, embodiment of this invention, layered is comprised of a first layer having an upper surface on which oscillating unit is cavity therein, a layer on which conduction for mounting the part for temperature compensation and circuits are at
 field, it is strongly required To develop a TempeRatUre CoMpenSateD crystal oscillATor hAving a new structure and a MethoD oF AdjuSTiNg the Output fREqUENcy UsInG thE nEW sTructUre, Wherein A trimmable ChiP rEsistor can be MOuNted withouT grEatly increasIng The proDuCt sIZe and Can Be triMmed in THe statE of final pRoDUct, thaT Is, at the LASt Step Of the process.
AccorDInGLy, the present inVentioN hAS bEEN maDe kEeping in miNd The abOVe problEMs OCCUrrINg in the prior aRt, and an objeCT of The preSeNt iNVentioN is to PrOVidE a temperatuRe coMpensated CrystaL OscillaTOr, in whiCh a plaNar ThiN filM ReSiStoR iS ForMEd On tHE upPer surfaCe Of A bottOm laYER OF a laYerEd stRuctuRe, thus minimizIng An inSTalLatioN area OccuPiEd by tHe thin Film rEsIstor for adjustiNg an Output freQueNcY.
AnOtHer obJEct of tHe pResEnt inveNtion is TO prOvIDE An Output frequency adjUsTINg Method, by Which aN OuTpUT frequenCy Can Be adJUSted iN the STaTe of a finAl prodUCt By TrimminG a Planar ThIn fIlm ResisTOr wiTh a lasEr beam thRough THe lower surface OF a bottom layer HAvING aN UppeR suRface on whicH the PLanaR thiN FiLm rESistoR is arRaNGeD.
in accordance with one AsPect of The prEsent inventioN, the above aND OTher objeCts cAN bE Accomplished by The prOvision of a TEmperatuRe comPensated Crystal osCILlator inCluDinG a cRysTAL oScillating uniT ANd at LeAst one pArt For tempEraTurE coMpeNsAtion and oScillatiOn CiRcUiTs, cOmpriSIng a plurAlIty Of LayErs haVIng an uPper lAyer On WhICh tHe crystAL oSCIllaTiNg Unit And ThE part Are mOUntEd, and at Least one lAyeR On whIcH cOnductiOn patterns are FoRmed; and a plAnAr tHin filM REsistor aRranged on an upper surface OF a bottoM laYer of The lAyered strUctUre for AdjUSting aN outpuT freqUeNcy OF The teMPErAtuRe CompensateD CRysTal osCiLlatOr.
The prEsent invention can bE ProVided in two typEs, aCcorDINg To a MOuNTinG sTRucTURe formed on the upPer layer.
In A pREfErred embodIMenT oF this inVention, A layeREd strucTure is comPrised of a FiRst lAYEr oN which condUction paTterns for MOuntiNG tHe cryStaL oscilLaTor And thE part aRE foRmed, a Second LaYer arrAnged UnDer the fiRst layer and provided with An uppeR surfAce On which otHer COndUction patTernS connected To tHe cOnducTioN PatteRns oF ThE fiRSt layEr arE Formed, and A ThIrd LAYeR arranged unDER The SeconD laYEr, wherEin tHe first layer is the UPper layer on whiCh thE CRysTal OScilLaTing unit and the ParT aRE Mounted, aNd The third layEr is the bOtTOm layEr on whIch the Planar tHIN fILm resiStor Is fOrmed.
FurtHer, In ANother eMbOdIMent of This InVentioN, a layeREd stRUCture is comprised Of a fiRST layeR HavIng an UpPer surfACe on Which the crYstal oscillAting uNit iS arraNged and HaVing a cAviTy Formed therEIn, a second Layer On which CoNducTioN patteRns fOR MountIng tHe ParT for tempeRATuRE cOmPEnsAtioN and oScIllaTion circuITs are forMed AT a regioN
 field, it is strongly req uired to d evelo p a  te mp erat urecompensated cr y stal  oscillator having a n ew st ru c ture an d a m ethod o f  a d j ust in gthe  o u tp ut fr equ ency us ing the ne w s tr ucture, wher e in  a trimmab lechip resisto r c an bemo unt e d wit hou t gre atly i n creasi ng the pr od u ct siz e  and ca n be  tri mmed in the state of final product,  thatis ,  a t the  la st step of  t he pr o cess.
A c co r d i ngl y , the present  inventionh asbeen m ad e k e epingin mi nd the  above prob lems  occurrin g in t h e prior art, an d an o bje ctof t h epr ese nt inv e nt ion isto provi de  a  temp erat u r e comp ens ated  crys tal oscillato r,in w h ich  a pl anarthin  f ilm r esisto r isfo rmed on the upp er s urface of  abo tto mlayer of a l aye red  struct ure, th u s m in i m i zi ng an installation  a r e aoccupied  by th e  t hi n  film re si sto r fo r adjus ting an  outputfreque n cy .Another  o bjectof  th e p resen t  inv ention  is to p rovid e  an output fre q uency adjusti n gm e th o d, b y w hich an out putf requ ency ca n b e  adju stedin th e  state of a final p ro duct b y tri mming a plana r thin fil m r esistorwith al aser beam thro ugh t he lower s u rface of  a bo ttom lay er having a n uppersur fac e o n w h i ch  the planar t h i n fi lm  resist oris arra nge d.Inacc or dance wit h one as pe ct  o fthe  pres e nt inven ti on,  t heabove and ot her o bjec ts  c a n b e accom p li s h ed b yth e pr ovi si on of  a t e mpe raturecompensat edc ryst al  o scillat or includingacrystal os ci lla ting u n i t and at  least one part for tem p erature  co mpens atio n and osc ill ationcir c uits,compri singaplu r a lityo f  l aye rs  having an u ppe r lay er  onwhich t he crystal oscilla t ing  unit and the  pa rt a r e  m oun t ed ,  an da t l e a st one layer on  which con du c ti on pattern s  ar eformed;  and aplana r  thin f ilm resis tor arran ge d on a n u pper surfa ce of abottom la y er of th e lay ere d stru ct ure  foradjust i ngan ou tput f re quency  of t he  tempera ture compensated crysta l osci llato r.The prese nti nve ntion can  beprovided i n t wotypes , a c cordi ng t o  a  mo u nting  str u cture for m ed  on t he  upper laye r . Ina pre fer r ed emb odim ent of this inven t ion, a layered  str u c tur e i s  com pr ised of a firs t l ay e r  on whic hconductionpatterns  f o r mou ntingthe cr ystal o s c il l ator a nd t hepart arefor me d , a sec on dl ayer a rran ge d unde r thef irst l ayer and provide d wit h an up p ersurfa ce  on whi c h ot her conduc tion patter ns con nect ed to  the co nd uction  pa tt erns of th e  first la yer a re form ed , an d a  third  lay e r  arra nged  u nde r the sec o n dl ay er ,  wh erei n the  f irst  layer is the uppe r l a yer onwh ich t he cry s ta l oscillatin g u nit a n d  the parta re m o un t ed, a nd the  third  layeri s t he  bottom  la y e r on whic h the pla n arth in f ilm resi st or i sfor me d.
Further, inanotherembodime n t  of th isi nven t ion, a  l ayered struc tureis compris e d  of  a firs t  la yer  ha ving  an  upp e r surface on which the c ryst al os c ill ating  unit  i s arrang e d an d having a cavity form ed therein, a s e con d  lay ero nwh ich condu cti o n pat tern s f or m oun ting t he p a rt f o rtemp eratur e co mp en sation an doscilla t ionc irc uits  arefo rm e dat a re gion
 field,_it is_strongly required to develop_a temperature_compensated_crystal oscillator_having_a new structure_and a method_of adjusting the output_frequency using the_new_structure, wherein a trimmable chip resistor can be mounted without greatly increasing the product_size_and can_be_trimmed_in the state of final_product, that is, at the_last step_of the process.
Accordingly, the present invention has been_made_keeping in mind_the above problems occurring in the prior art, and_an object of the present invention_is to provide_a_temperature_compensated crystal oscillator, in_which a planar thin film resistor_is formed on the upper surface_of a bottom layer of a layered_structure, thus minimizing an installation area_occupied by the thin film_resistor for_adjusting an output frequency.
Another object_of the present_invention is_to provide an_output frequency adjusting method, by which_an output frequency_can be adjusted in the state_of_a final product_by_trimming_a planar_thin film resistor_with_a laser_beam_through the lower surface of a_bottom_layer having an upper surface on which_the planar thin film_resistor_is arranged.
In accordance with_one aspect of the present_invention, the above and other objects_can be_accomplished by_the provision of a temperature compensated crystal oscillator including a crystal_oscillating unit and at least one_part for temperature compensation_and oscillation_circuits,_comprising a plurality_of_layers having_an upper layer on which the crystal_oscillating unit_and the part are mounted, and_at least one layer_on_which conduction patterns are formed; and_a planar thin film resistor arranged_on an upper surface of_a_bottom_layer of the layered structure_for adjusting an output frequency of_the temperature compensated_crystal oscillator.
The present invention can be provided_in_two types, according to a mounting_structure_formed on the upper layer.
In a_preferred_embodiment_of this invention, a layered_structure is comprised of a first_layer on which conduction patterns for mounting the crystal_oscillator and the_part are formed, a second_layer_arranged_under the first layer and provided with an upper surface_on which_other conduction patterns_connected to the conduction patterns of the first layer are_formed, and a third layer arranged under_the second layer, wherein the first layer is the upper layer_on which the crystal oscillating unit and the_part are mounted, and the third layer_is the bottom layer_on_which the planar thin film resistor is_formed.
Further,_in_another_embodiment of this_invention, a layered_structure is comprised_of a_first layer having_an upper_surface on which_the_crystal oscillating unit is arranged and having a cavity formed therein, a second layer on which conduction patterns_for mounting the part for temperature_compensation and oscillation circuits are_formed_at a region