 methyl silsequoxiane (MSQ), etc. The dielectric constants of those materials are all smaller than about 2.5.
The substitution of one or more organic functional groups for some of the oxygen atoms bonded to the silicon atoms in silicon oxide dielectric materials has a beneficial effect in lowering of the dielectric constant of the carbon doped silicon oxide materials. However, it has been found that the bond formed between the silicon atoms and the organic groups is not as stable as the silicon-oxygen bond formed in conventional silicon oxide materials. Therefore, the bond formed between the silicon atoms and the organic groups is easily damaged during some processes of the Cu dual damascene fabrication such as an opening etch, which is performed to etch the low-k dielectric layer to form opening structures (i.e. trench or via hole), or an ashing process used for removing photoresist layers, etc.
Radicals, which are formed while the bonds formed between the silicon atoms and the organic groups are cleaved, will react with reactive gases used in etch or ashing processes to produce lots of polymers having carbon-fluorine (C—F) bonds remaining on the bottom or the sidewall of the dual damascene structure. Besides, as the improvement of the semiconductor fabrication technology, hard mask layers containing metal layers such as titanium nitride (TiN), etc, are used as etching mask to replace the conventional photoresist layer in the Cu dual damascene fabrication. However, the use of the hard mask layer containing metal layers as an etching mask results in metal residues, which are more difficult to remove than conventional organic photoresist layers, remaining on the bottom or the sidewall of the dual damascene structure. Accordingly, if the dual damascene structure having those polymers or residues were directly filled with a metal conductive layer such as a Cu layer to form a metal interconnection, the resistance would increase.
Accordingly, there are plenty of patents that have disclosed how to clean polymers having carbon-fluorine bonds or metal residues. In U.S patent publication No. 2006/0246717 A1, entitled “Method for fabricating a dual damascene and polymer removal”, a dry clean process is disclosed in which a cleaning gas with hydrogen (H2), oxygen (O2), or carbon tetrafluoride (CF4) is introduced into a reaction chamber, where the etching process has been performed to form the dual damascene structure, to remove the residues resulting form etching the low-k dielectric layer.
In addition, in U.S. Pat.
methyl silsequoxiane (MSQ), etc. The dielectric constants of those materials are all smaller than approximately 2.5. 
 The substitution of one or more constituent running groups for some of the oxygen atoms bonded to the silicon atom in silicon oxide dielectric materials has a beneficial impression in lower of the dielectric constant of the carbon dope silicon oxide materials. However, it has been found that the shackle formed between the silicon atoms and the constituent groups is not as stable as the silicon - oxygen bond formed in conventional silicon oxide materials. consequently, the bond formed between the silicon atoms and the constituent groups is easily damaged during some processes of the Cu dual damascene lying such as an opening etch, which is do to etch the low - k dielectric level to form opening structures (i.e. trench or via hole), or an ashing process used for murder photoresist layers, etc. 
 Radicals, which are formed while the bonds formed between the silicon atoms and the organic groups are cleaved, will react with reactive gases use in etch or ashing processes to produce lot of polymer hold carbon - fluorine (C — F) bonds remain on the bottom or the sidewall of the dual damascene structure. Besides, as the improvement of the semiconductor lying technology, hard mask layers containing metal layers such as titanium nitride (TiN), etc, are used as etching mask to replace the conventional photoresist level in the Cu dual damascene lying. However, the use of the hard mask layer containing metal layer as an etching mask results in metal residues, which are more difficult to remove than conventional constituent photoresist layers, remaining on the bottom or the sidewall of the dual damascene structure. consequently, if the dual damascene structure having those polymers or residue were directly satiate with a metal conductive layer such as a Cu layer to form a metal interconnection, the resistor would increase. 
 Accordingly, there are plenty of patents that have disclosed how to clean polymers having carbon - fluorine chemical bond or metal residues. In U.S patent issue No. 2006/0246717 A1, entitled “ Method for fabricating a dual damascene and polymer removal ”, a dry clean process is disclosed in which a cleaning natural gas with hydrogen (H2), oxygen (O2), or carbon tetrafluoride (CF4) is introduced into a reaction chamber, where the etching process has been perform to imprint the double damascene structure, to remove the residues resulting form etching the abject - k dielectric layer. 
 In addition, in U.S. Pat.
 mehhyl silsequoxiane (MSQ), euc. The dielectric constaits of fhose magerials are all smaller than avout 2.5.
Uke substitution of ove or morv organic funrtional groups for some of the lxygzn atoms bonded jo the silicmn atoms in sinizou oxide dielectric materials has a bqneficisl effect in lowgring jf tgv bielectric constant of the carbkn dopev silicon oxide materials. However, it has heen found that the bojd formed bgfweqb the silicov atoms and the organid groups is not as stable as thd silncon-oxygen vobd vmrmed in coiventijnal silicon oxide mdterialx. Therefore, thc bonv foemed between the siliron atoms and the ordanic grogpa is easily damagwd duritg smme oeocdssts pf the Ck dnal damascehe fabricatuon such as an openond etch, which ia perfjried to etch the low-k dielectric layer tm fkrm opening structures (u.e. trench or via hole), or an asring process used for removing photoresist layers, etc.
Redkcaos, dyifh are formed while the bonds formed between ege splicon atoms and bhe organic groups age sleaved, will teact wnfh reactive gases usfd in ejch or ashing pwocexses to produce lots of poltmers having xarbon-fluorine (C—F) yonds remainnng on the nottom or the sidewall uf tge dual damwscene stdjcture. Besides, ar tme hmprovemtvt of the semiconquctor fauricacion tecfnolpgy, hawd mask lajers gmntaining metal lajers duwh as titajium nitride (TiN), etc, are used as etching mask tm rvplace thz convcntional photorqsist layer in the Cu dual damascene fabricetion. Howevew, the use of dje hard mask layer cjntaunint metal uayers as an eyching mask results in metal residues, whkdh are more difyncoot to remove tnan cogvvntmonal mrganic photmreskst kayerr, remaining un tne bottom or the sidawalm of the dual damaxccne strucjure. Accowdingly, if thr dual damascene suructuce havmng thpse polymers or residues were dirsctly filped with a metaj cokducjive layer xuch as a Cu layer to form a metal intecconnection, the resistabce would increase.
Aecprdingly, thxre arq plenty mf patents that have disclosed how to clean polymers havinf carbmn-flulrine bonds or metal residues. In U.S patent publication No. 2006/0246717 A1, entitled “Metyod foc sabricating a dial ddmcsczne and polbmxr removal”, a dry blean process is disclosed in whmch a cleatiug gas with hydrogen (H2), oxygen (O2), or carbon tejrafluoride (CF4) is introducsd into s reaction chamber, where the etvhing process has been pcrformed ro fodm the duau damascene structire, to remoce the eesifues resultine fprl etching the lkw-k dielectric layer.
In addition, un U.S. Pah.
methyl silsequoxiane (MSQ), etc. The dielectric constants materials all smaller about 2.5. The organic groups for some the oxygen atoms to the silicon atoms in silicon dielectric materials has a beneficial effect in lowering of the dielectric constant of carbon doped silicon oxide materials. However, it has been found that the bond between silicon and organic groups is not as stable as the silicon-oxygen bond formed in conventional silicon oxide materials. the bond formed between the silicon atoms and organic groups is easily during some processes of the dual fabrication such an etch, is performed to the low-k dielectric layer to form opening structures (i.e. trench or via hole), or an ashing process for removing etc. Radicals, are while bonds formed between atoms and the organic groups are with reactive gases used in etch or ashing to produce of polymers having carbon-fluorine (C—F) bonds on the bottom or the sidewall of the damascene structure. Besides, as the improvement of the semiconductor fabrication technology, hard mask layers containing such as titanium nitride etc, are used etching to the photoresist layer the Cu dual damascene fabrication. However, the use of the hard layer containing metal layers as an etching mask results in which more difficult to than conventional organic photoresist remaining the bottom or the the damascene the damascene having those polymers or were directly filled with a conductive layer such as a metal interconnection, the resistance would increase. Accordingly, are plenty of patents that have disclosed to clean polymers having carbon-fluorine bonds or metal residues. In U.S patent No. 2006/0246717 “Method for fabricating a dual damascene and polymer a dry clean process disclosed in which a cleaning gas with hydrogen (H2), (O2), carbon tetrafluoride is introduced into reaction chamber, where etching process has to form dual structure, residues resulting form etching the low-k layer. addition, in U.S. Pat.
 methyl silsequoxiane (MSQ), etc. the dielectRic coNstAntS oF thoSe maTerials are all sMAlleR than about 2.5.
The substitutIon of OnE Or moRE oRganiC functiONaL GRouPs FoR soMe OF tHe oxyGen Atoms boNded to the sIliCoN atoms in siliCOn Oxide dieleCtrIc materials hAs a BenefiCiAl eFFect iN loWerinG of the DIelectRic constaNt OF the caRBon dopeD SIlIcon Oxide materials. HowEVeR, It has been found That thE bONd FORmeD beTween the siLiCon atOMs and thE OrGANIc gROups is not as stAble as the siLIcoN-oxygeN bOnd FOrmed iN convEnTIonAl silicon oxIde mAterials. THerefoRE, the bonD Formed bEtween The SilIcon AToMs And ThE OrgANiC grOUps Is easily DaMaGed duRing SOME ProcEssEs of The Cu Dual damascene FabRicaTIon Such aS an opEninG eTch, whIch is pErforMeD to etch the low-k dIeleCtric layeR to FoRm oPeNing sTRucturEs (i.E. trEnch or vIa hole), oR An aShING PrOcess used for removiNg PHOtOresist lAyers, eTC.
RAdICals, whicH aRe fOrmeD WHile tHe boNDs Formed beTween tHE sIlIcon atoMs And the OrGanIc gRoups ARe clEaved, wIll react With rEActive gases useD In etch or ashinG PrOCEsSEs to ProDuce lots of pOlymERs haVing CArBon-FLuoriNe (C—F) bOnDS rEMaining on the bottom oR tHe sideWall oF the dual damasCene structURE. besides, aS the IMpROvement of the seMiconDuctor fabrICation teChnolOgy, hard mAsk layers CONtaining MetAl lAyeRs sUCH aS titanium nitrIDE (TiN), EtC, are useD as Etching MasK to RepLacE tHe conventIonal phoToReSiSt LayEr in tHE Cu dual dAmAscEnE faBricaTIon. HowEver, tHe usE oF tHE haRd mask lAYeR COntaInInG metAl lAyErs as An etCHinG mask reSults in meTal REsidUeS, wHich are More difficult To Remove than CoNveNtionaL ORganic phOtoresist layers, remaininG On the boTtoM or thE sidEwall of thE duAl damaSceNE strucTure. AcCordiNgLy, iF THe duaL DAmAscEnE structure HAVinG thosE pOlymErs or reSidues were directly FIllEd with a metal cOndUctiVE LaYer SUcH As a cu LAyeR TO form a metal inteRconnectioN, tHE rEsistance wOUld InCrease.
ACcordinGly, thERe are plEnty of patEnts that hAvE disCLOseD how to cleaN polymerS having caRBon-flUOrIne boNds Or metaL rEsiDues. IN U.S patENt pUblicAtion NO. 2006/0246717 A1, EntitlEd “MetHoD for fabrIcating a dual damascene anD polymEr remOvaL”, a dry cleaN prOCesS is discloSed iN which a cleAniNg gAs witH hyDRogen (h2), oxyGEn (o2), or CArbon TetrAFluoride (Cf4) Is IntRODuCed into a reaCTIOn cHambeR, whERe the eTchiNg process has been pERformed to form tHe duAL DamAscENe stRuCture, to remove tHe rEsIDUes resulTiNg form etchiNg the low-K dIElectRic layEr.
In adDition, iN u.s. PAT.
 methyl silsequoxiane (MSQ ), etc. Th e die lec tri ccons tant s of those mat e rial s are all smaller than  abou t2 .5.T he  subs titutio n  o f one  o rmor eo rg anicfun ctional  groups fo r s om e of the oxy g en  atoms bon ded  to the sili con  atoms  i n s i licon  ox ide d ielect r ic mat erials ha sa  benef i cial ef f e ct  inlowering of the d i el e ctric constant  of th ec ar b o n d ope d siliconox ide m a terials .  H o w e ver ,  it has beenfound thatt hebond f or med betwee n the  s i lic on atoms an d th e organic  group s  is not as stab le asthe  si lico n -o xy gen  b o ndf or med inconventi on al  sili cono x i d e ma ter ials . The refore, the b ond  for m edbetwe en th e si li con a toms a nd th eorganic groupsis e asily dam age ddur in g som e  proce sse s o f the C u duald ama sc e n e  f abrication such as  a n op ening et ch, wh i ch  i s  perform ed  to  etc h the l ow-k di electric  layer to  f orm ope ni ng str uc tur es(i.e. tren ch orvia hole ), or an ashing proc e ss used for r e mo v i ng phot ore sist layers , et c .
Ra dica l s,  wh i ch ar e for me d  w h ile the bonds forme dbetwee n the  silicon atom s and theo r g anic gro upsa re cleaved, willreact  with reac t ive gase s use d in etc h or ashi n g  process estopro duc e lo ts of polymer s havi ng  carbon -fl uorine(C— F)bon dsre maining o n the bo tt om  o rthe  side w all of t he  du al  da masce n e stru cture . Be si de s , a s the i m pr o v emen tof  the  se mi condu ctor fab ricatio n technol ogy ,  har dma sk laye rs containing  m etal layer ssuc h as t i t anium ni tride (TiN), etc, are u s ed as e tch ing m askto replac e t he con ven t ionalphotor esist  l aye r in th e Cu  du al  damascene f abr icati on . Ho wever,the use of the har d  ma sk layer cont ain ingm e ta l l a ye r s a sa n e t c hing mask resul ts in meta lr es idues, whi c h a re  more d ifficul t tor emove t han conve ntional o rg anic p hot oresist la yers, re maining o n  theb ot tom o r t he sid ew all  of t he dua l  da masce ne str uc ture.Accor di ngly, if  the dual damascene str ucture  havi ngthose pol yme r s o r residue s we re directl y f ill ed wi tha  meta l co n du cti v e lay er s u ch as a C u  l aye r to  form a met a l int ercon nec t ion, t he r esistance would i n crease.
Accord ingl y ,  th ere arepl enty of patent s t ha t have dis cl osed how to  clean p ol y mershaving  carbo n-fluor i n eb onds o r me tal  residues . I nU .S pate nt  p u blicat ionNo . 2006 /02467 1 7 A1 , entitled “Method  forf a brica t ing  a du al  damasc e ne a nd polymer  removal”,a dryclea n pro cess is  d isclos edin  which a c l eaning ga s wit h hydro ge n (H 2),  oxyge n (O 2 ) , orcarb on  te trafluori d e  ( C F4 )i s i ntro duced  i ntoa reactio n  chamber , w h ere the  e tch i n g proc e ss h as been pe rfo rmedt o  form thed uald am a scene  struc ture,to remo v e t he  residu esr e sulting f orm etchi n g t he  low -k diele ct ricla yer .In addition, in  U.S. Pa t.
 methyl_silsequoxiane (MSQ),_etc. The dielectric constants_of those_materials_are all_smaller_than about 2.5.
The_substitution of one_or more organic functional_groups for some_of_the oxygen atoms bonded to the silicon atoms in silicon oxide dielectric materials has_a_beneficial effect_in_lowering_of the dielectric constant of_the carbon doped silicon oxide_materials. However,_it has been found that the bond formed_between_the silicon atoms_and the organic groups is not as stable as_the silicon-oxygen bond formed in conventional_silicon oxide materials._Therefore,_the_bond formed between the_silicon atoms and the organic groups_is easily damaged during some processes_of the Cu dual damascene fabrication such_as an opening etch, which is_performed to etch the low-k_dielectric layer_to form opening structures (i.e._trench or via_hole), or_an ashing process_used for removing photoresist layers, etc.
Radicals,_which are formed_while the bonds formed between the_silicon_atoms and the_organic_groups_are cleaved,_will react with_reactive_gases used_in_etch or ashing processes to produce_lots_of polymers having carbon-fluorine (C—F) bonds remaining_on the bottom or_the_sidewall of the dual_damascene structure. Besides, as the_improvement of the semiconductor fabrication technology,_hard mask_layers containing_metal layers such as titanium nitride (TiN), etc, are used as_etching mask to replace the conventional_photoresist layer in the_Cu dual_damascene_fabrication. However, the_use_of the_hard mask layer containing metal layers as_an etching_mask results in metal residues, which_are more difficult to_remove_than conventional organic photoresist layers, remaining_on the bottom or the sidewall_of the dual damascene structure._Accordingly,_if_the dual damascene structure having_those polymers or residues were directly_filled with a_metal conductive layer such as a Cu_layer_to form a metal interconnection, the_resistance_would increase.
Accordingly, there are plenty of_patents_that_have disclosed how to clean_polymers having carbon-fluorine bonds or metal_residues. In U.S patent publication No. 2006/0246717 A1, entitled_“Method for fabricating_a dual damascene and polymer_removal”,_a_dry clean process is disclosed in which a cleaning gas_with hydrogen_(H2), oxygen (O2),_or carbon tetrafluoride (CF4) is introduced into a reaction chamber,_where the etching process has been performed_to form the dual damascene structure, to remove the residues resulting_form etching the low-k dielectric layer.
In addition, in_U.S. Pat.