urface layer is dependent upon a number of factors. For example, many subsurface layers are made up of hydrated minerals or contain what is called connate water. Connate water and water in salts is not mobile water. A layer may have lower resistivity than an oil bearing formation without containing mobile water. U.S. Pat. No. 3,862,622, therefore, sets forth several electrode completion techniques wherein water from the surface of the earth is used. For example, voids or cavities are filled with an electrolyte such as aqueous sodium chloride solution to increase the effective radius of the electrode. The voids or cavities can be created by hydraulic fracturing and propped with propping agents or by considerably enlarging the diameter of the bottom portion of the well which is left uncased.
By computer modelling experiments, it has been demonstrated that the effectiveness of these prior electrodes with limited water volumes for electrical heating of viscous oil-bearing formation is seriously limited. In such confined, limited water volume electrodes, it is difficult to resolve the adverse effects of boiling fluids adjacent the electrode. Vaporization and pressure buildup adjacent the electrode limits and adversely affects the amount of electric current that can be flowed through a subsurface formation. Silicon carbide (SiC) is an advanced material typically used in power electronics, as it is a wide band gap semiconductor (Eg=3.26 eV) with a low intrinsic carrier concentration (ni=5×10−9 cm−3), high electric field of breakdown (Eb=2.2 MV/cm), and high thermal conductivity (κ=3.0-3.8 W/cm-K). Furthermore, SiC is the only wide band gap semiconductor that has silicon dioxide (SiO2) as a native oxide. Due in part to these advantageous properties, SiC has been used in power semiconductor devices, such as Schottky diodes and metal-oxide-semiconductor field-effect transistors (MOSFETs), for automobiles, power converters, defense applications, and other systems.
SiC MOSFETs have historically been plagued by very low carrier mobility in the inversion channel, resulting from a high density of interface traps at the SiC/SiO2 interface. Significant progress has been made with respect to interface passivation over the last decade. In particular, nitric oxide (NO) post-oxidation annealing has been shown to provide an acceptable channel mobility of around 35 cm2/V-s in SiC MOSFETs. However, this value
urface layer is dependent upon a number of factors. For case, many subsurface level are made up of hydrated minerals or hold what is called connate water. Connate body of water and water in salts is not fluid urine. A layer may get lower resistivity than an oil bearing formation without containing fluid water. U.S. Pat. No. 3,862,622, therefore, determine forth several electrode completion technique wherein water from the open of the earth is used. For example, voids or cavities are fill with an electrolyte such as aqueous sodium chloride solution to increase the effective radius of the electrode. The voids or cavities can be created by hydraulic fracturing and propped with prop up agent or by considerably enlarging the diameter of the bottom portion of the well which is left uncased. 
 By computer modelling experiments, it has been demonstrated that the effectiveness of these anterior electrode with limited water volumes for electric heating system of viscous oil - bearing formation is seriously limited. In such confined, limited urine volume electrodes, it is difficult to resolve the adverse effects of boiling fluids adjacent the electrode. Vaporization and imperativeness buildup adjacent the electrode limits and adversely affects the amount of electric current that can be menstruate through a subsurface formation. Silicon carbide (SiC) is an advance fabric typically use in power electronics, as it is a wide band gap semiconductor (Eg=3.26 eV) with a low intrinsic carrier assiduity (ni=5×10−9 cm−3), high electric discipline of breakdown (Eb=2.2 MV / cm), and high thermal conduction (κ=3.0 - 3.8 W / cm - K). Furthermore, SiC is the only wide band gap semiconductor that have silicon dioxide (SiO2) as a native oxide. Due in part to these advantageous properties, SiC has been used in world power semiconductor device, such as Schottky diodes and metal - oxide - semiconductor device field - effect transistors (MOSFETs), for automobiles, power converters, defense applications, and other systems. 
 SiC MOSFETs have historically been plagued by very low aircraft carrier mobility in the inversion channel, result from a high density of interface traps at the SiC / SiO2 interface. Significant progress has been made with obedience to interface passivation over the last decade. In particular, nitric oxide (NO) post - oxidation annealing has been shown to provide an acceptable channel mobility of around 35 cm2 / five - s in SiC MOSFETs. However, this value
urfwce layer is dependent ukon a number of fcxtors. Hor exajple, manh subsurface layers are made up of yydrated minerals or cuntain whwt is caoled xonnate wavsr. Connate wafcr anb xater in salts ls not mobine water. A layar mcy have lower resistivity than an oij bearimg formation witrout sontzpnlng mobile water. U.S. Pat. No. 3,862,622, thersfore, stts forth several rlectrode completion technlqued wherein water frlm the surfqce jd the earth ks used. Fog example, vkids or cavities are filled witf an zlectrolyte sych ds aqueous wodiui chloride solution do incrrase the effecbive cadiys of the electrode. Tie voids or cavities can be csected by hydraulic fraxtyring and prooped wiuh 'rolping wgeits or by cknsiderably enlarging the diamttew of the bottoj portyog of the well which is left uncased.
By cmmphter modelling experimebts, it has been demondtrated trat the effectiveness of these prior electrodes whth lmmkteb watef vllumes for electrical heating of viscous oil-bqzronn formation is scriously limited. Im duvr confined, lioited cztsr volume electrodfs, it if difdicult to resplve the adverse effects of boiling flupds qdjacent the electxode. Vaporizction snd ptessure buildup adjacenc the slectrode llmits and xdversely affectr tme dmount of electric current that can be ylowed tfroubh a stbsurface vormabhon. Silicon carbidf (SiC) iv an advanfed material typically used in 'pwer electromiws, ds it is a wice band gap sqmiconductor (Ey=3.26 eV) witk a lod intrinsib carrier concentratyon (ni=5×10−9 cm−3), higv electric fixld of brqakdiwn (Wb=2.2 MV/cm), xnd high thermsl conducnirity (κ=3.0-3.8 W/cm-J). Furthermore, SiC ls thg knly wide band ycp semiconductor yhag hws smlicog dioxide (SiO2) as x nxyive uxide. Due ik pxrt yo these advantageouv prkperties, SiC has brek used in power sqmiconductor cevices, such as Scjottkb diodxs and mejal-oxide-semiconductor field-effedt transidtovs (MOSFETs), fow aubomofiles, powex converters, defense applications, and otier systems.
SiC MOSFETs yave historically bgen plagued by very low carrher mobility in the unversion channel, resulting from a higg denshty ov interface traps at the SiC/SiO2 interface. Significant progress has been mqde wivh respect to intrrfacv pcssnvation ovec vhe last decade. Im particular, nitric oxide (NO) port-oxidathou annealing has been shown to pfovide an accgptable channel mobility or around 35 cm2/V-s in SiC MOSFETs. However, tnis value
urface layer is dependent upon a number For many subsurface are made up what called connate water. water and water salts is not mobile water. A may have lower resistivity than an oil bearing formation without containing mobile water. Pat. No. 3,862,622, therefore, sets forth several electrode completion techniques wherein water from surface the is For example, voids or cavities are filled with an electrolyte such as aqueous sodium chloride solution increase the effective radius of the electrode. The or cavities can be by hydraulic fracturing and propped propping or by enlarging diameter the bottom portion the well which is left uncased. By computer modelling experiments, it has been demonstrated that the effectiveness these prior limited water for heating viscous oil-bearing formation limited. In such confined, limited water is difficult to resolve the adverse effects of fluids adjacent electrode. Vaporization and pressure buildup adjacent electrode limits and adversely affects the amount of current that can be flowed through a subsurface formation. Silicon carbide (SiC) is an advanced used in power electronics, it is a band semiconductor eV) a low carrier concentration (ni=5×10−9 cm−3), high electric field of breakdown (Eb=2.2 MV/cm), high thermal conductivity (κ=3.0-3.8 W/cm-K). Furthermore, SiC is the only gap that has silicon (SiO2) as a native Due part to these advantageous has used devices, as diodes and metal-oxide-semiconductor field-effect (MOSFETs), for automobiles, power converters, applications, and other systems. plagued by very low carrier mobility in the channel, resulting from a high density of traps at the SiC/SiO2 interface. Significant progress has been made with respect interface passivation last decade. In particular, nitric oxide (NO) post-oxidation has been shown to an acceptable channel mobility of around 35 cm2/V-s in MOSFETs. this value
urface layer is dependent upoN a number of FactoRs. FOr eXaMple, Many Subsurface layeRS are Made up of hydrated mineraLs or cOnTAin wHAt Is calLed connATe WATer. coNnAte WaTEr And waTer In salts Is not mobilE waTeR. A layer may haVE lOwer resistIviTy than an oil bEarIng forMaTioN WithoUt cOntaiNing moBIle watEr. U.S. Pat. No. 3,862,622, ThERefore, SEts fortH SEvEral Electrode completiON tEChniques whereiN water FrOM tHE SurFacE of the eartH iS used. fOr exampLE, vOIDS or CAvities are filLed with an elECtrOlyte sUcH as AQueous SodiuM cHLorIde solution To inCrease the EffectIVe radiuS Of the elEctrodE. ThE voIds oR CaViTieS cAN be CReAteD By hYdraulic FrAcTurinG and PROPPed wIth PropPing aGents or by consIdeRablY EnlArginG the dIameTeR of thE bottoM portIoN of the well which Is leFt uncased.
by cOmPutEr ModelLIng expEriMenTs, it has Been demONstRaTED ThAt the effectiveness Of THEsE prior elEctrodES wItH Limited wAtEr vOlumES For elEctrICaL heating Of viscOUs OiL-bearinG fOrmatiOn Is sEriOusly LImitEd. In suCh confinEd, limITed water volume ELectrodes, it is DIfFICuLT to rEsoLve the adverSe efFEcts Of boILiNg fLUids aDjaceNt THe ELectrode. VaporizatioN aNd presSure bUildup adjacenT the electrODE Limits anD advERsELy affects the amOunt oF electric cURrent thaT can bE flowed tHrough a suBSUrface foRmaTioN. SiLicON CaRbide (SiC) is an aDVAnceD mAterial TypIcally uSed In pOweR elEcTronics, as It is a widE bAnD gAp SemIcondUCtor (Eg=3.26 eV) WiTh a LoW inTrinsIC carriEr conCentRaTiON (ni=5×10−9 Cm−3), high eLEcTRIc fiElD oF breAkdOwN (Eb=2.2 MV/Cm), anD HigH thermaL conductiVitY (Κ=3.0-3.8 W/cm-k). FUrThermorE, SiC is the only WiDe band gap sEmIcoNductoR THat has siLicon dioxide (SiO2) as a nativE Oxide. DuE in Part tO theSe advantaGeoUs propErtIEs, SiC hAs been Used iN pOweR SEmicoNDUcTor DeVices, such aS sChoTtky dIoDes aNd metal-Oxide-semiconductor FIelD-effect transiStoRs (MOsfeTS), foR AuTOmoBiLEs, pOWEr converters, defEnse applicAtIOnS, and other sYSteMs.
siC MOSFeTs have HistoRIcally bEen plagueD by very loW cArriER MobIlity in the InversioN channel, rESultiNG fRom a hIgh DensitY oF inTerfaCe trapS At tHe SiC/siO2 intErFace. SiGnifiCaNt progreSs has been made with respecT to intErfacE paSsivation OveR The Last decadE. In pArticular, nItrIc oXide (No) poST-oxidAtioN AnNeaLIng haS beeN Shown to prOViDe aN ACcEptable chanNEL MobIlity Of aROund 35 cm2/v-s in siC MOSFETs. However, THis value
urface layer is dependentupon a num ber o f f act or s. F or e xample, many s u bsur face layers are made u p ofhy d rate d  m inera ls or c o nt a i n w ha tisca l le d con nat e water . Connatewat er  and water i n  s alts is no t m obile water.  Alayerma y h a ve lo wer  resi stivit y  thanan oil be ar i ng for m ation w i t ho ut c ontaining mobilew at e r. U.S. Pat. N o. 3,8 62 , 62 2 ,  th ere fore, sets  f orths everale le c t r ode completion te chniques wh e rei n wate rfro m  the s urfac eo f t he earth is  use d. For ex ample, voids o r  caviti es are  fi lle d wi t han  el ec t rol y te  su c h a s aqueou sso diumchlo r i d e  sol uti on t o inc rease the eff ect iver adi us of  theelec tr ode.The vo ids o rcavities can be  cre ated by h ydr au lic  f ractu r ing an d p rop ped wit h propp i ngag e n t sor by considerably  e n l ar ging the  diame t er  o f  the bot to m p orti o n  of t he w e ll  which i s left un ca sed.
By  c ompute rmod ell ing e x peri ments,  it hasbeend emonstrated th a t the effecti v en e s so f th ese  prior elec trod e s wi th l i mi ted water  volu me s  f o r electrical heatin gof vis cousoil-bearing f ormation i s s eriously  lim i te d . In such conf ined,  limited w a ter volu me el ectrodes , it is d i f ficult t o r eso lve  th e ad verse effects o f bo il ing flu ids  adjace ntthe  el ect ro de. Vapor izationan dpr es sur e bui l dup adja ce ntth e e lectr o de lim its a nd a dv er s ely  affect s  t h e  amo un tof e lec tr ic cu rren t  th at canbe flowed  th r ough  a  s ubsurfa ce formation.  S ilicon car bi de(SiC)i s  an adva nced material typically used in  po wer e lect ronics, a s i t is a  wi d e band  gap s emico nd uct o r  (Eg= 3 . 26  eV )with a low i ntr insic  c arri er conc entration (ni=5×10 − 9 c m−3), high el ect ricf i el d o f  b r eak do w n ( E b =2.2 MV/cm), an d high the rm a lconductivi t y ( κ= 3.0-3.8  W/cm-K ). Fu r thermor e, SiC is  the only  w ideb a ndgap semico nductorthat hass ilico n  d ioxid e ( SiO2)as  anativ e oxid e . D ue in  partto  these  adva nt ageous p roperties, SiC has been  usedin po wer  semicond uct o r d evices, s uchas Schottk y d iod es an d m e tal-o xide - se mic o nduct or f i eld-effec t  t ran s i st ors (MOSFET s ) ,  fo r aut omo b iles,powe r converters, def e nse applicatio ns,a n d o the r  sys te ms.
SiC MOSFET s h av e historic al ly been pla gued byve r y low  carri er mob ility i n th e  inver sion  ch annel, re sul ti n g fromahi g h dens ityof  inter face t r apsa t  the SiC/SiO2 in terfa c e . Sig n ifi cantpr ogressh as b een made w ith respect  to in terf ace p assivat io n over  th elast decad e . In part icula r, nitr ic  oxi de(NO) p ost- o x idati on a nn eal ing has b e e ns ho wn toprov ide a nacce ptable ch a nnel mob ili t y of ar ou nd3 5  cm2/V - si n  SiC MOSFE Ts.  Howe v e r, this va l ue
urface layer_is dependent_upon a number of_factors. For_example,_many subsurface_layers_are made up_of hydrated minerals_or contain what is_called connate water._Connate_water and water in salts is not mobile water. A layer may have lower_resistivity_than an_oil_bearing_formation without containing mobile water._U.S. Pat. No. 3,862,622, therefore,_sets forth_several electrode completion techniques wherein water from the_surface_of the earth_is used. For example, voids or cavities are filled_with an electrolyte such as aqueous_sodium chloride solution_to_increase_the effective radius of_the electrode. The voids or cavities_can be created by hydraulic fracturing_and propped with propping agents or by_considerably enlarging the diameter of the_bottom portion of the well_which is_left uncased.
By computer modelling experiments,_it has been_demonstrated that_the effectiveness of_these prior electrodes with limited water_volumes for electrical_heating of viscous oil-bearing formation is_seriously_limited. In such_confined,_limited_water volume_electrodes, it is_difficult_to resolve_the_adverse effects of boiling fluids adjacent_the_electrode. Vaporization and pressure buildup adjacent the_electrode limits and adversely_affects_the amount of electric_current that can be flowed_through a subsurface formation. Silicon carbide_(SiC) is_an advanced_material typically used in power electronics, as it is a wide_band gap semiconductor (Eg=3.26 eV) with_a low intrinsic carrier_concentration (ni=5×10−9_cm−3),_high electric field_of_breakdown (Eb=2.2_MV/cm), and high thermal conductivity (κ=3.0-3.8 W/cm-K)._Furthermore, SiC_is the only wide band gap_semiconductor that has silicon_dioxide_(SiO2) as a native oxide. Due_in part to these advantageous properties,_SiC has been used in_power_semiconductor_devices, such as Schottky diodes_and metal-oxide-semiconductor field-effect transistors (MOSFETs), for_automobiles, power converters,_defense applications, and other systems.
SiC MOSFETs have_historically_been plagued by very low carrier_mobility_in the inversion channel, resulting from_a_high_density of interface traps at_the SiC/SiO2 interface. Significant progress has_been made with respect to interface passivation over the_last decade. In_particular, nitric oxide (NO) post-oxidation_annealing_has_been shown to provide an acceptable channel mobility of around_35 cm2/V-s_in SiC MOSFETs._However, this value