 assignee of the present invention. The rectifier assembly of that arrangement comprises a sealed housing in which the silicon wafer is located. Such housing comprises a cylindrical insulator and sheet metal terminal, or sealing, members bonded to the insulator. The above-described occasional arc occurring at the edge of the wafer is a high current arc which can burn a hole through or otherwise perforate one of these sealing members, thereby allowing flame, sparks, or other arcing products to escape from the sealed housing. Piccone et al. prevents escape of these arcing products to the surrounding ambient by providing what amounts to a supplementary enclosure of rugged construction around portions of the housing, which enclosure is able to contain the arcing products escaping from the housing and effectively withstand the high pressures developed by such escaping arcing products. This enclosure includes relatively thick O-rings, metal back-up rings for the O-rings, and also means for compressing the O-rings. 1. Field of the Invention
The present invention relates to a semiconductor memory device such as an electrically programmable read only memory (EPROM), more particularly, to an improvement of a sense amplifier in such a semiconductor memory device.
2. Description of the Related Art
In general, in an EPROM or other semiconductor memory device, in the program mode, predetermined data is programmed from a data programming circuit to a selected memory cell by storing, or not storing, electric charges at the floating gate of the cell transistor constituting the selected memory cell. On the other hand, in the read mode, the data programmed in the cell transistor is read out by sensing whether or not such electric charges are stored in the floating gate of the cell transistor constituting the selected memory cell.
When programming data "0" in a selected cell transistor of the memory cell array, electrons are accumulated in the floating gate of the selected cell transistor. When reading the data, the cell transistor does not become conductive even if the selection signal is applied to the control gate. The nonconductive state of the cell transistor is detected by the sense amplifier, whereby the programmed data "0" is read out through the sense amplifier.
On the other hand, when programming data "1" in a selected cell transistor of the memory cell array, electrons are not accumulated in the floating gate of the selected cell transistor. Therefore, in the read mode, when the selection signal is applied to the control gate, the cell transistor becomes conductive. The conductive state of the cell transistor is detected by the sense amplifier, whereby the programmed data "1"
assignee of the present invention. The rectifier assembly of that arrangement comprises a sealed caparison in which the silicon wafer is locate. Such housing comprises a cylindrical insulator and sail alloy terminal, or sealing, member bond to the insulator. The above - described episodic arc occurring at the boundary of the wafer is a high current arc which can burn a hole through or differently perforate one of these sealing extremity, thereby allowing flame, flicker, or other arcing products to escape from the plastered housing. Piccone et al. prevents escape of these arch products to the smother ambient by providing what total to a supplementary enclosure of rugged construction around part of the housing, which enclosure is able to contain the arcing products escaping from the caparison and efficaciously resist the high pressures developed by such escaping arcing products. This enclosure includes relatively thick O - band, metal back - up ring for the O - hoop, and also means for compressing the oxygen - rings. 1. battlefield of the Invention 
 The present invention relates to a semiconductor memory device such as an electrically programmable read merely memory (EPROM), more particularly, to an improvement of a sense amplifier in such a semiconductor memory device. 
 2. Description of the Related Art 
 In general, in an EPROM or other semiconductor memory device, in the program mode, predetermined data is program from a data scheduling racing circuit to a selected memory cell by storing, or not storing, electric charge at the floating gate of the cell transistor constituting the choose memory cell. On the early hand, in the read mode, the data programmed in the cell transistor is learn out by sensing whether or not such electric charges are store in the floating gate of the cellular telephone transistor constituting the selected memory cell. 
 When programming datum " 0 " in a selected cell transistor of the memory cell array, electron are accumulated in the floating gate of the selected cell transistor. When reading the data, the cell transistor does not become conductive even if the selection signal is applied to the control gate. The nonconductive state of the cell transistor is detect by the sense amplifier, whereby the programmed datum " 0 " is read out through the sense amplifier. 
 On the other handwriting, when programming data " 1 " in a selected cell transistor of the memory cell array, electrons are not accumulated in the floating gate of the selected cell transistor. consequently, in the read mode, when the selection signal is apply to the control gate, the cell transistor become conductive. The conductive state of the cell transistor is detect by the sense amplifier, whereby the programmed data " 1 "
 asdignee of the present inyention. The rectndier avsemblg of thag arrangement comprises a seeled housung in which the silicun wafer ps locatee. Surh housing comprmaes a cnjinddlcal nnwulator and shget metal tesminal, or sealhne, lembers bonded to the insulator. The above-drsfribed occasiogal swc odbuvring at the edge of the wafer ia a higi current arc wnich can burn a hole throuhh og otherwise perforwte one of jgesq sealing memcers, thereby allowing rlame, sparks, or other arcing pruductx to escapg rrlk the sealev houspng. Piccone eb al. pravents rscape of thesc arcmng products to the surronnding ambient by prjviding wvac amounts to a supplenebtary encnosufw ow rhgjed constgucvion around portions od the housing, which egbkosure is abme to sogtain the arcing products escaping from ths housing and effectiveoy withstand the high pressuref developed by such escaping arcing products. This enclkrurt lkcluaws relatively thick O-rings, metal back-up rings fjd uhe O-rings, and alfo means fot fokkressing the O-tings. 1. Yjemd of the Inventioj
The prgsent unvention relstes to a semiconductor memiry device slch qs an electrically programmabue rgad onky memory (EPROM), more paxticulzrly, to an lmprovemehg of a sense ampuifper hn such a semiconductor meiory devire.
2. Dexcriptiun og the Welated Arh
In gcteral, in an EPROM lr otker samiconductlr memory device, in the program mode, predeterkited data is progvammed from a dwta programminy circuic to a selected jemory rell by storyng, or not stmting, electric charges at rhe dloatine gate of the crll transpsuor constiruting the selectev meokry cell. On the otyer hand, in the rexd iofe, tra data progrdmmea iv the zell transiwgor os read out by sensitg wgether or not such ejectric xharges wre stored in the floating gate of tie celu tramsiftor constituting the selected memory cfll.
Rhen programiing data "0" in a xelected cell transistor of the memory rell array, electrons ate accumulated in the nloating gatx of tre selectad cell transistor. Wyen reading the dsta, the cell transistkr doev not become conductive even if the selection signal is applied to the control gate. Vhq nonconducfive statv oy tke cell traismstor is detected by the sense amplifier, whereby the procrcmmed data "0" is read out throubh the sense amklifier.
On the other hand, wgen progtamming data "1" in a selected celk transistor of the memovy cell aeray, slectrons ere not accumulated on the floaring gare on the selected cekl transistlr. Tierzfore, in the read mode, when the swlectiin signal is applixd to the coktvol gaje, the cgll transistor bedomea condoctive. The concuctive state pf the cell transistmr is detected bt the sense akplifieg, whereby the programmed data "1"
assignee of the present invention. The rectifier that comprises a housing in which Such comprises a cylindrical and sheet metal or sealing, members bonded to the The above-described occasional arc occurring at the edge of the wafer is a current arc which can burn a hole through or otherwise perforate one of sealing thereby flame, or other arcing products to escape from the sealed housing. Piccone et al. prevents escape of arcing products to the surrounding ambient by providing amounts to a supplementary of rugged construction around portions the which enclosure able contain arcing products escaping the housing and effectively withstand the high pressures developed by such escaping arcing products. This enclosure includes thick O-rings, rings for O-rings, also for compressing the Field of the Invention The present a semiconductor memory device such as an electrically read only (EPROM), more particularly, to an improvement a sense amplifier in such a semiconductor memory 2. Description of the Related Art In general, in an EPROM or other semiconductor memory the program mode, predetermined is programmed from data circuit a memory cell storing, or not storing, electric charges at the floating gate of cell transistor constituting the selected memory cell. On the other the mode, the data in the cell transistor read by sensing whether or electric are floating of cell transistor constituting the memory cell. When programming data in a selected cell array, electrons are accumulated in the floating gate the selected cell transistor. When reading the the cell transistor does not become conductive even if the selection signal applied to gate. The nonconductive state of the cell transistor detected by the sense whereby the programmed data "0" is read out through sense On the hand, when programming "1" in a cell transistor of cell array, are accumulated gate of the selected cell transistor. in read mode, when the selection is the control gate, the cell transistor becomes conductive. The conductive state of the cell transistor by the sense amplifier, the data "1"
 assignee of the present invenTion. The recTifieR asSemBlY of tHat aRrangement compRIses A sealed housing in which tHe silIcON wafER iS locaTed. Such HOuSINg cOmPrIseS a CYlIndriCal InsulatOr and sheet MetAl Terminal, or seALiNg, members bOndEd to the insulAtoR. The abOvE-deSCribeD ocCasioNal arc OCcurriNg at the edGe OF the waFEr is a hiGH CuRrenT arc which can burn a HOlE Through or otherWise peRfORaTE One Of tHese sealinG mEmberS, Thereby ALlOWINg fLAme, sparks, or otHer arcing prODucTs to esCaPe fROm the sEaled HoUSinG. Piccone et aL. preVents escaPe of thESe arcinG ProductS to the SurRouNdinG AmBiEnt By PRovIDiNg wHAt aMounts to A sUpPlemeNtarY ENCLosuRe oF rugGed coNstruction aroUnd PortIOns Of the HousiNg, whIcH enclOsure iS able To Contain the arcinG proDucts escaPinG fRom ThE housINg and eFfeCtiVely witHstand tHE hiGh PRESsUres developed by sucH eSCApIng arcinG produCTs. thIS enclosuRe IncLudeS RElatiVely THiCk O-rings, Metal bACk-Up Rings foR tHe O-rinGs, And AlsO meanS For cOmpresSing the O-Rings. 1. fIeld of the InvenTIon
The present INvENTiON relAteS to a semiconDuctOR memOry dEViCe sUCh as aN elecTrICaLLy programmable read oNlY memorY (EPROm), more particulArly, to an imPROVement of A senSE aMPlifier in such a SemicOnductor meMOry devicE.
2. DescRiption oF the RelatED art
In genEraL, in An EpROm OR oTher semiconduCTOr meMoRy devicE, in The progRam ModE, prEdeTeRmined datA is progrAmMeD fRoM a dAta prOGramming CiRcuIt To a SelecTEd memoRy celL by sToRiNG, or Not storINg, ELEctrIc ChArgeS at ThE floaTing GAte Of the ceLl transisTor COnstItUtIng the sElected memory CeLl. On the othEr HanD, in the REAd mode, thE data programmed in the celL TransisTor Is reaD out By sensing WheTher or Not SUch eleCtric cHargeS aRe sTORed in THE fLoaTiNg gate of thE CEll TransIsTor cOnstituTing the selected memORy cEll.
When prograMmiNg daTA "0" In A seLEcTEd cElL TraNSIstor of the memorY cell array, ElECtRons are accUMulAtEd in the FloatinG gate OF the selEcted cell TransistoR. WHen rEADinG the data, thE cell traNsistor doES not bECoMe conDucTive evEn If tHe selEction SIgnAl is aPplied To The conTrol gAtE. The noncOnductive state of the cell TransiStor iS deTected by tHe sENse Amplifier, WherEby the progRamMed Data "0" iS reAD out tHrouGH tHe sENse amPlifIEr.
On the otHEr HanD, WHeN programminG DATa "1" iN a selEctED cell tRansIstor of the memory cELl array, electroNs arE NOt aCcuMUlatEd In the floating gAte Of THE selecteD cEll transistOr. TherefOrE, In the Read moDe, when The seleCTIoN Signal Is apPliEd to the coNtrOl GAte, the cElL tRAnsistOr beCoMes conDuctivE. the cONDuctive state of thE cell TRAnsisTOr iS deteCtEd by the SEnse Amplifier, wHereby the prOgrammEd daTa "1"
 assignee of the present i nvention.The r ect ifi er  ass embl y of that arra n geme nt comprises a sealedhousi ng in w h ic h the  silico n  w a f eris  l oca te d .Suchhou sing co mprises acyl in drical insul a to r and shee t m etal termina l,or sea li ng, membe rsbonde d to t h e insu lator. Th ea bove-d e scribed o cc asio nal arc occurring at the edge of th e wafe ri sa hig h c urrent arc  w hichc an burn ah o l e t h rough or othe rwise perfo r ate  one o fthe s e seal ing m em b ers , thereby a llow ing flame , spar k s, or o t her arc ing pr odu cts  toe sc ap e f ro m  th e  s eal e d h ousing.Pi cc one e t al . p r even tsesca pe of  these arcing  pr oduc t s t o the  surr ound in g amb ient b y pro vi ding what amoun ts t o a suppl eme nt ary  e nclos u re ofrug ged  constr uctiona rou nd p o rt ions of the housin g, w hi ch enclo sure i s  a bl e  to cont ai n t he a r c ing p rodu c ts  escapin g from th ehousing  a nd eff ec tiv ely  with s tand  the h igh pres sures developed by s u ch escaping a r ci n g  p r oduc ts.  This enclo sure incl udes re lat i velythick  O - ri n gs, metal back-up r in gs for  theO-rings, andalso means f o r compre ssin g  t h e O-rings. 1.Field  of the In v ention
T he pr esent in vention r e l ates toa s emi con duc t o rmemory device s uchas  an ele ctr icallypro gra mma ble  r ead onlymemory ( EP RO M) ,mor e par t icularly ,toan  im prove m ent of  a se nseam pl i fie r in su c ha semi co nd ucto r m em ory d evic e .
2 . Descr iption of  th e  Rel at ed  Art
In  general, inan  EPROM orot her  semic o n ductor m emory device, in the pr o gram mo de,  pred eter mined dat a i s prog ram m ed fro m a da ta pr og ram m i ng ci r c ui t t oa selected m emo ry ce ll  bystoring , or not storing,e lec tric chargesatthef l oa tin g  g a teof the c ell transistorconstituti ng th e selected mem or y cell.  On the  othe r  hand,in the re ad mode,th e da t a  pr ogrammed i n the ce ll transi s tor i s  r ead o utby sen si ngwheth er orn otsuchelectr ic  charg es ar estored i n the floating gate ofthe ce ll tr ans istor con sti t uti ng the se lect ed memorycel l.Whenpro g rammi ng d a ta  "0 "  in a  sel e cted cell tr ans i s to r of the me m o r y c ell a rra y , elec tron s are accumulated in the floatin g ga t e  of  th e  sel ec ted cell trans ist or . When rea di ng the data , the ce ll trans istordoes n ot beco m e  c o nducti ve e ven  if the s ele ct i on sign al  i s  appli ed t othe co ntrolg ate. T he nonconductive  stat e of th e  ce ll tr an sistori s de tected bythe sense a mplifi er,where by thepr ogramm edda ta "0" isr ead out t hroug h the s en se a mpl ifier. 
Ont h e oth er h an d,when prog r a mm i ng  d a ta"1"in ase lect ed cell t r ansistor  of the mem or y c e l l arra y ,e l ectrons ar e n ot ac c u mulated in thef lo a tinggate o f theselecte d  ce ll  transi sto r .  Therefor e, in the rea dmode , when t he  sel ec tio nsignal is appli ed to th e contro l gate,the cell transi st or becomes c onduc ti v e. Thec o ndu ctive s t ate  of  th e ce lltran s istor is detected by the  sen se am p lif ier,where by  the pro g ramm ed data" 1"
 assignee_of the_present invention. The rectifier_assembly of_that_arrangement comprises_a_sealed housing in_which the silicon_wafer is located. Such_housing comprises a_cylindrical_insulator and sheet metal terminal, or sealing, members bonded to the insulator. The above-described_occasional_arc occurring_at_the_edge of the wafer is_a high current arc which_can burn_a hole through or otherwise perforate one of_these_sealing members, thereby_allowing flame, sparks, or other arcing products to escape_from the sealed housing. Piccone et_al. prevents escape_of_these_arcing products to the_surrounding ambient by providing what amounts_to a supplementary enclosure of rugged_construction around portions of the housing, which_enclosure is able to contain the_arcing products escaping from the_housing and_effectively withstand the high pressures_developed by such_escaping arcing_products. This enclosure_includes relatively thick O-rings, metal back-up_rings for the_O-rings, and also means for compressing_the_O-rings. 1. Field_of_the_Invention
The present_invention relates to_a_semiconductor memory_device_such as an electrically programmable read_only_memory (EPROM), more particularly, to an improvement_of a sense amplifier_in_such a semiconductor memory_device.
2. Description of the Related_Art
In general, in an EPROM or_other semiconductor_memory device,_in the program mode, predetermined data is programmed from a data_programming circuit to a selected memory_cell by storing, or_not storing,_electric_charges at the_floating_gate of_the cell transistor constituting the selected memory_cell. On_the other hand, in the read_mode, the data programmed_in_the cell transistor is read out_by sensing whether or not such_electric charges are stored in_the_floating_gate of the cell transistor_constituting the selected memory cell.
When programming_data "0" in_a selected cell transistor of the memory_cell_array, electrons are accumulated in the_floating_gate of the selected cell transistor._When_reading_the data, the cell transistor_does not become conductive even if_the selection signal is applied to the control gate._The nonconductive state_of the cell transistor is_detected_by_the sense amplifier, whereby the programmed data "0" is read_out through_the sense amplifier.
On_the other hand, when programming data "1" in a selected_cell transistor of the memory cell array,_electrons are not accumulated in the floating gate of the selected_cell transistor. Therefore, in the read mode, when_the selection signal is applied to the_control gate, the cell_transistor_becomes conductive. The conductive state of the_cell_transistor_is_detected by the_sense amplifier, whereby_the programmed data_"1"