 has the chemical name 2-methyl-N-[4-nitro-3-(trifluoromethyl)phenyl]propanamide, or N-isobutyryl-4-nitro-3-trifluoromethylanilide, is a nonsteroidal compound devoid of androgenic, adrenocortical, anti-estrogenic, estrogenic, progestational, and antifertility actions. This compound has proved to be a potent antiandrogen and is approved for the palliative treatment of advanced prostate cancer in man. The approved therapeutic dose is 750 mg/day of flutamide in three divided doses of 250 mg/dose. The approved product, Eulixin.RTM., is available in capsules containing 125 mg of flutamide, therefore, the patient takes two capsules three times a day. Patient compliance with the recommended dosage schedule is sometimes poor, since a large number of patients undergoing this treatment are elderly and are forgetful.
One of the objects of the present invention was to develop a controlled release oral dosage form of flutamide which would allow for twice a day use. In addition, the novel controlled release dosage form would provide comparable bioavailability when compared to the standard capsule dosage form. 1. Field of the Invention
The present invention relates to a method for manufacturing thin film transistors.
2. Description of the Related Art
With respect to a thin film transistor, there has been known a technique where a contact resistance is lowered by interposing a silicon layer of high impurity concentration between a silicon layer and a source electrode or a drain electrode (see JP-A-11-87721).
In the conventional thin film transistor, a silicon layer which constitutes a channel and a silicon layer of high impurity concentration which constitutes a source electrode and a drain electrode are formed and hence, it is necessary to form them by etching respectively. Further, the silicon layer of high impurity concentration per se has the resistance and hence, it is desirable to form such a silicon layer with a small thickness. To prevent an erroneous operation due to absorption of light, it is preferable to form silicon layers in two layers such that these layers have a small thickness respectively. However, in forming the source electrode and the drain electrode, the silicon layer which constitutes the channel is also etched so that the reduction of thicknesses of these layers is limited. 1. Field of the Invention
The present invention relates generally to recording on magnetic tape, and more specifically to correct placement of written tracks on magnetic media relative to the read elements.
2.
has the chemical name 2 - methyl - N-[4 - nitro-3-(trifluoromethyl)phenyl]propanamide, or N - isobutyryl-4 - nitro-3 - trifluoromethylanilide, is a nonsteroidal compound devoid of androgenic, adrenocortical, anti - estrogenic, estrogenic, progestational, and antifertility actions. This compound has proved to be a potent antiandrogen and is approved for the alleviative discussion of advance prostate cancer in man. The approved curative dose is 750 mg / day of flutamide in three separate doses of 250 mg / venereal disease. The approved product, Eulixin. RTM. , is available in condensation containing 125 mg of flutamide, consequently, the patient takes two capsules three times a day. Patient compliance with the recommended dose schedule is sometimes poor, since a large issue of patients undergoing this treatment are elderly and are unretentive. 
 One of the objects of the present invention was to develop a controlled release oral dosage mannequin of flutamide which would allow for twice a day use. In addition, the novel controlled release dosage form would provide comparable bioavailability when compared to the standard capsule dosage form. 1. Field of the Invention 
 The present invention relates to a method for manufacturing thin movie transistor. 
 2. Description of the Related Art 
 With respect to a thin film transistor, there has been know a technique where a contact resistance is lower by interject a silicon layer of high impurity assiduity between a silicon layer and a source electrode or a drain electrode (see JP - A-11 - 87721). 
 In the conventional thin film transistor, a silicon layer which constitutes a channel and a silicon layer of high impurity concentration which form a source electrode and a drain electrode are shape and hence, it is necessary to form them by etching respectively. Further, the silicon layer of eminent impurity concentration per se has the resistance and therefore, it is desirable to form such a silicon level with a small thickness. To prevent an erroneous operation due to absorption of light, it is preferable to form silicon level in two layers such that these layer have a minor thickness respectively. However, in forming the reference electrode and the drain electrode, the silicon layer which establish the channel is also etched so that the reduction of thicknesses of these layer is limited. 1. discipline of the Invention 
 The present invention relates generally to recording on magnetic tape, and more specifically to right placement of written tracks on charismatic media relative to the read elements. 
 2.
 had the chemical name 2-methnl-N-[4-nitro-3-(trifluoromethyl)'henyl]pdopanamiae, or N-isobutyryl-4-nitro-3-triflulrimethtlanilide, is a nonsteruidal comiound deviid id androgenmd, adrenocortidwl, autm-estrogenic, esttogenic, progastational, and avtnfertility actions. This compound has proved tl be a potent wntisgdrofvn and is approved for the palljative ureatment of advanved prostate cancer in man. The approved therapeuhic dose is 750 mg/qqy of flutamkde in thrte divided dkses of 250 mg/dose. The approved pruduct, Eulixin.RTN., us weailable in capslles containikb 125 mg mf flutsmide, thereforc, the parient takes two capsunes three times a qay. Patiett compliance with rhw recmmmetded eosxge srhesule id skmetimes pkor, since a large number of pauiegnx undergoing this erqatment are elderly and are forgetful.
Ont of fhe objects of the preswnt invention was to fevelop a controlled release oral dosage form of flutamide whici douod xollw for twice a day use. In addition, the novel sknurokled release djsage form eoklc provide compxrable bikavailability when compargd to rhe standwrd vapsule dosage form. 1. Field if the Invennion
Rhe present inventnon relates co a mgthod gor manufacturing thin yilm tdansistors.
2. Fescriptikv of the Related Arn
Witv respecu to a thin film twansistor, thexe has bden lnown w techniquf wheva a contact resistwnce ns lofered by ijterposing a silicon layer of hmjh impurity cpnwennration bztween a silicon larer and a souree electxode of a drain vlectrode (see JP-A-11-87721).
In ehe conventiotwl thin film transiseor, q sioicon lxher which consyitutes a channel abd a silicon layer of gigh impurity cinctnrration which vonrtieunes a vource electsode ana a drxin electrobe are formed and hence, it is hecessary to form yhcm by etcying res[ectively. Furyher, the silicon lwyer mf iigh ikputity concentration per se has tge resistwncc and hence, ie is desirable tp form such a silicon layer with a smalo thickness. To prgvent an erroneous opgrauion due to ausorptyon of licht, it is preferable to form silicon kayers in two layers auch tvat tjese layers have a small thickness respectively. However, in forming the soyrce electrode and the drait zleetrode, ehe dmlicon layer whicn constitutes the channel is alro etcheg fo that the reduction of thivkvesses of there layers is limited. 1. Fisld of tne Invention
The present inventipn relates generally to vecording on mzgnetib tepe, and more specifivally co coreect plqcemcnt of written trscns on magjetir mzdia relative to the read elementw.
2.
has the chemical name 2-methyl-N-[4-nitro-3-(trifluoromethyl)phenyl]propanamide, or N-isobutyryl-4-nitro-3-trifluoromethylanilide, nonsteroidal devoid of adrenocortical, anti-estrogenic, estrogenic, compound proved to be potent antiandrogen and approved for the palliative treatment of prostate cancer in man. The approved therapeutic dose is 750 mg/day of flutamide three divided doses of 250 mg/dose. The approved product, Eulixin.RTM., is available in containing mg flutamide, the patient takes two capsules three times a day. Patient compliance with the recommended dosage schedule sometimes poor, since a large number of patients this treatment are elderly are forgetful. One of the of present invention to a release oral dosage of flutamide which would allow for twice a day use. In addition, the novel controlled release dosage would provide when compared the capsule form. 1. Field Invention The present invention relates to manufacturing thin film transistors. 2. Description of the Art With to a thin film transistor, there been known a technique where a contact resistance lowered by interposing a silicon layer of high impurity concentration between a silicon layer and electrode or a drain (see JP-A-11-87721). In conventional film a layer which a channel and a silicon layer of high impurity concentration which a source electrode and a drain electrode are formed and is to form them etching respectively. Further, the layer high impurity concentration per the and desirable form a silicon layer with small thickness. To prevent an operation due to absorption to form silicon layers in two layers such these layers have a small thickness respectively. in forming the source electrode and the drain electrode, the silicon layer constitutes the also etched so that the reduction of thicknesses these layers is limited. Field of the Invention The present invention relates generally recording magnetic tape, more specifically to placement of written on magnetic media the read 2.
 has the chemical name 2-methyl-N-[4-Nitro-3-(triflUoromEthYl)pHeNyl]pRopaNamide, or N-isobuTYryl-4-Nitro-3-trifluoromethylanIlide, Is A NonsTErOidal CompounD DeVOId oF aNdRogEnIC, aDrenoCorTical, anTi-estrogenIc, eStRogenic, progeSTaTional, and aNtiFertility actIonS. This cOmPouND has pRovEd to bE a poteNT antiaNdrogen anD iS ApprovED for the PALlIatiVe treatment of advaNCeD Prostate cancer In man. THe APpROVed TheRapeutic doSe Is 750 mg/dAY of flutAMiDE IN thREe divided doseS of 250 mg/dose. ThE AppRoved pRoDucT, eulixiN.RTM., iS aVAilAble in capsuLes cOntaining 125 Mg of flUTamide, tHErefore, The patIenT taKes tWO cApSulEs THreE TiMes A Day. patient cOmPlIance With THE REcomMenDed dOsage Schedule is somEtiMes pOOr, sInce a Large NumbEr Of patIents uNdergOiNg this treatment Are eLderly and Are FoRgeTfUl.
One OF the obJecTs oF the preSent invENtiOn WAS To Develop a controlled ReLEAsE oral dosAge forM Of FlUTamide whIcH woUld aLLOw for TwicE A dAy use. In aDditioN, ThE nOvel conTrOlled rElEasE doSage fORm woUld proVide compArablE BioavailabilitY When compared tO ThE STaNDard CapSule dosage fOrm. 1. FIEld oF the iNvEntIOn
The PreseNt INvENtion relates to a methOd For manUfactUring thin film TransistorS.
2. dEScriptioN of tHE RELated Art
With reSpect To a thin filM TransistOr, theRe has beeN known a teCHNique wheRe a ConTacT reSIStAnce is lowered BY InteRpOsing a sIliCon layeR of HigH imPurItY concentrAtion betWeEn A sIlIcoN layeR And a sourCe EleCtRodE or a dRAin eleCtrodE (see jP-a-11-87721).
IN The ConventIOnAL Thin FiLm TranSisToR, a silIcon LAyeR which cOnstituteS a cHAnneL aNd A silicoN layer of high iMpUrity conceNtRatIon whiCH ConstituTes a source electrode and a DRain eleCtrOde arE forMed and henCe, iT is necEssARy to foRm them By etcHiNg rESPectiVELy. furThEr, the silicON LayEr of hIgH impUrity coNcentration per se haS The Resistance and HenCe, it IS DeSirABlE To fOrM SucH A Silicon layer witH a small thiCkNEsS. To prevent AN erRoNeous opEration Due to ABsorptiOn of light, It is prefeRaBle tO FOrm Silicon layErs in two Layers sucH That tHEsE layeRs hAve a smAlL thIckneSs respECtiVely. HOwever, In ForminG the sOuRce electRode and the drain electrodE, the siLicon LayEr which coNstITutEs the chanNel iS also etcheD so ThaT the rEduCTion oF thiCKnEssES of thEse lAYers is limITeD. 1. FiELD oF the InventiON
tHe pResenT inVEntion RelaTes generally to recORding on magnetiC tapE, ANd mOre SPeciFiCally to correct PlaCeMENt of writTeN tracks on maGnetic meDiA RelatIve to tHe read ElementS.
2.
 has the chemical name 2-m ethyl-N-[4 -nitr o-3 -(t ri fluo rome thyl)phenyl]pr o pana mide, or N-isobutyryl- 4-nit ro - 3-tr i fl uorom ethylan i li d e , i sanon st e ro idalcom pound d evoid of a ndr og enic, adreno c or tical, ant i-e strogenic, e str ogenic ,pro g estat ion al, a nd ant i fertil ity actio ns .  Thisc ompound h as  pro ved to be a poten t  a n tiandrogen and  is ap pr o ve d for  th e palliati ve  trea t ment of ad v a n ced prostate canc er in man.T heapprov ed  th e rapeut ic do se is750 mg/dayof f lutamidein thr e e divid e d doses  of 25 0 m g/d ose. Th eapp ro v edp ro duc t , E ulixin.R TM .,  is a vail a b l e  incap sule s con taining 125 m g o f fl u tam ide,there fore ,the p atient  take stwo capsules th reetimes a d ay.  P ati en t com p liance  wi ththe rec ommende d  do sa g e sc hedule is sometime sp o or , sincea larg e  n um b er of pa ti ent s un d e rgoin g th i streatmen t aree ld er ly andar e forg et ful .
O ne of theobject s of the  pres e nt invention w a s to developa  c o n tr o lled  re lease oraldosa g e fo rm o f  f lut a midewhich  w o ul d  allow for twice ada y use.  In a ddition, thenovel cont r o l led rele ased os a ge form wouldprovi de compara b le bioav ailab ility wh en compar e d  to thesta nda rdcap s u le  dosage form. 1 . Fi el d of th e I nventio n
T hepre sen tinvention  relates  t oame tho d for manufact ur ing  t hin  film transi stors .
2.  D es c rip tion of th e Rela te dArtWit hrespe ct t o  athin fi lm transi sto r , th er ehas bee n known a tec hn ique where  a  co ntactr e sistance  is lowered by interpos i ng a si lic on la yerof high i mpu rity c onc e ntrati on bet weenasil i c on la y e rand  a  source el e c tro de or  a  dra in elec trode (see JP-A-11 - 877 21).
In the c onv enti o n al  th i nf ilm  t r ans i s tor, a siliconlayer whic hc on stitutes a cha nn el anda silic on la y er of h igh impur ity conce nt rati o n  wh ich consti tutes asource el e ctrod e  a nd adra in ele ct rod e are  forme d  an d hen ce, it  i s nece ssary  t o form t hem by etching respecti vely.Furth er,  the sili con lay er of hig h im purity con cen tra tionper se ha s th e  r esi s tance  and hence, it is  de s i ra ble to form s u cha sil ico n  layer  wit h a small thickne s s. To preventan e r r one ous oper at ion due to abs orp ti o n  of ligh t,  it is pref erable t of orm s ilicon  layer s in tw o la y ers su ch t hat  these la yer sh ave a s ma ll thickn essre specti vely.H owev e r , in forming the  sour c e  elec t rod e and  t he drai n  ele ctrode, th e silicon l ayer w hich  cons titutes  t he cha nne lis also et c hed so th at th e reduc ti on o f t hickne sses o f the se l ay ers  is limit e d .1 .Fi e ldof t he In ve ntio n
The pre s ent inve nti o n relat es  ge n e rallyt or e cording on  ma gneti c tape, andm ores pe c ifica lly to  corre ct plac e men tof writ ten t racks onmagneticm edi arela tive toth e re ad  el em ents.
2.
 has_the chemical_name 2-methyl-N-[4-nitro-3-(trifluoromethyl)phenyl]propanamide, or N-isobutyryl-4-nitro-3-trifluoromethylanilide,_is a_nonsteroidal_compound devoid_of_androgenic, adrenocortical, anti-estrogenic,_estrogenic, progestational, and_antifertility actions. This compound_has proved to_be_a potent antiandrogen and is approved for the palliative treatment of advanced prostate cancer_in_man. The_approved_therapeutic_dose is 750 mg/day of_flutamide in three divided doses_of 250_mg/dose. The approved product, Eulixin.RTM., is available in_capsules_containing 125 mg_of flutamide, therefore, the patient takes two capsules three_times a day. Patient compliance with_the recommended dosage_schedule_is_sometimes poor, since a_large number of patients undergoing this_treatment are elderly and are forgetful.
One_of the objects of the present invention_was to develop a controlled release_oral dosage form of flutamide_which would_allow for twice a day_use. In addition,_the novel_controlled release dosage_form would provide comparable bioavailability when_compared to the_standard capsule dosage form. 1. Field_of_the Invention
The present_invention_relates_to a_method for manufacturing_thin_film transistors.
2._Description_of the Related Art
With respect to_a_thin film transistor, there has been known_a technique where a_contact_resistance is lowered by_interposing a silicon layer of_high impurity concentration between a silicon_layer and_a source_electrode or a drain electrode (see JP-A-11-87721).
In the conventional thin film_transistor, a silicon layer which constitutes_a channel and a_silicon layer_of_high impurity concentration_which_constitutes a_source electrode and a drain electrode are_formed and_hence, it is necessary to form_them by etching respectively._Further,_the silicon layer of high impurity_concentration per se has the resistance_and hence, it is desirable_to_form_such a silicon layer with_a small thickness. To prevent an_erroneous operation due_to absorption of light, it is preferable_to_form silicon layers in two layers_such_that these layers have a small_thickness_respectively._However, in forming the source_electrode and the drain electrode, the_silicon layer which constitutes the channel is also etched_so that the_reduction of thicknesses of these_layers_is_limited. 1. Field of the Invention
The present invention relates generally_to recording_on magnetic tape,_and more specifically to correct placement of written tracks on_magnetic media relative to the read elements.
2.