 in a semiconductor layer in a GaN semiconductor laser. When laser beam is applied to a nitride-based GROUP III-V compound semiconductor, such as GaN, doped with the p-type dopant Mg to activate the p-type dopant, the laser beam has a photon energy in a range of Eg-real±0.5 eV, where Eg-real, which is an actually measured bandgap of the semiconductor, is a photon energy for which the absorption coefficient “a” of the semiconductor is equal to a quantity defined by “a=1/d”, and “d” is a thickness of the semiconductor in which the dopant is to be activated.
Patent Document 2 (Japanese Patent Application Laid-Open No. 11-224957) discloses that, when a semiconductor layer contains a considerable amount of a group II-element impurity, activation is implemented by applying laser beam of not less than 10 W/cm2 nor more than 500 W/cm2 to the p-type nitride semiconductor layer in which the dopant is not activated. The activation is further promoted if the p-type nitride semiconductor layer is also doped with an n-type dopant.
Patent Document 3 (Japanese Patent Application Laid-Open No. 2000-306854) discloses a method of activating a p-type layer in a gallium nitride (GaN) compound semiconductor device. This method irradiates the p-type layer at a temperature in the range of 200° C. to 500° C. with light containing wavelengths in the range from ultraviolet to visible light, thereby removing hydrogen bound to the p-type dopant in the p-type layer to activate the p-type dopant as an acceptor.
Patent Document 4 (Japanese Patent Application Laid-Open No. 9-266218) discloses a method of forming a p-type II-VI compound semiconductor or GaN compound semiconductor of low-resistance without annealing after crystal growth. The p-type II-VI compound semiconductor or GaN compound semiconductor epitaxially grown by MOCVD is irradiated with pulsed laser beam of the photon energy not less than the bandgap energy of these compound semiconductors to generate electron-hole pairs. Namely, since the pulsed laser beam has the wavelength corresponding to the energy not less than the bandgap energy of the irradiated semiconductor, an electron-hole pair is generated by a single photon. Bonding between the p-type dopant and hydrogen is cut by electric effect of carriers generated from the electron-hole pair, to remove hydrogen
in a semiconductor layer in a GaN semiconductor laser. When laser beam is apply to a nitride - free-base GROUP III - V compound semiconductor, such as GaN, doped with the phosphorus - type dopant Mg to activate the p - character dopant, the laser balance beam has a photon department of energy in a compass of Eg - real±0.5 eV, where Eg - real number, which is an actually measured bandgap of the semiconductor, is a photon energy for which the absorption coefficient “ a ” of the semiconductor device is equal to a quantity define by “ a=1 / d ”, and “ d ” is a thickness of the semiconductor in which the dopant is to be activated. 
 Patent Document 2 (Japanese Patent Application Laid - Open nobelium. 11 - 224957) discloses that, when a semiconductor layer hold a considerable amount of a group II - element impurity, energizing is implemented by use laser beam of not less than 10 W / cm2 nor more than 500 W / cm2 to the p - type nitride semiconductor device layer in which the dopant is not activated. The activation is further promoted if the p - character nitride semiconductor device level is also doped with an n - type dopant. 
 Patent Document 3 (Japanese Patent Application Laid - Open No. 2000 - 306854) discloses a method of activating a phosphorus - type level in a gallium nitride (GaN) compound semiconductor device. This method irradiate the p - type layer at a temperature in the range of 200 ° C. to 500 ° C. with inner light containing wavelengths in the range from ultraviolet to visible light, thereby murder hydrogen bound to the p - type dopant in the p - type layer to trip the p - type dopant as an acceptor. 
 Patent Document 4 (Japanese Patent Application Laid - Open No. 9 - 266218) discloses a method of forming a p - character II - VI compound semiconductor device or GaN compound semiconductor device of low - resistance without annealing after crystal growth. The p - type II - VI compound semiconductor or GaN compound semiconductor device epitaxially grown by MOCVD is irradiate with pulsed laser beam of the photon department of energy not less than the bandgap energy of these compound semiconductors to generate electron - hole pairs. Namely, since the pulsate laser beam induce the wavelength corresponding to the department of energy not less than the bandgap energy of the irradiated semiconductor, an electron - hole couple is generated by a single photon. Bonding between the p - type dopant and hydrogen is cut by electric effect of carriers generated from the electron - hole pair, to remove hydrogen
 in a semiconductor layer ik a GaN semicondocror laver. Whsn laser beam is applied to a nitridx-baswd GRIUP III-V compound semizonductor, such as GaN, eoped with the p-tyiz dopzkt Mg vo activate the p-type dopdnt, the laser texm has a photon energy in a range of Qg-real±0.5 rV, where Eg-real, rhicn is zn actually measured bandgap of ths semicmnductor, is a photon energy for which tje ahsorption coefficifnt “a” of thg seiuconductor ir equal to a quantity sefined by “a=1/d”, and “d” is a thickndss oy the semicineuchmr in which the qopant is to be actieated.
Payent Document 2 (Ja'anewe Patent Application Laid-Open No. 11-224957) discjoses thad, chen a semiconductor oater cmntahns x covsisecabme amoknt of a groul II-element impurity, activatiom yw implemented by ap[lring laser beam of not less than 10 W/cm2 nmr jore than 500 W/cm2 to the p-rype nitride semicondoctor layew in which the dopant is not activated. The activadion ms fuxbmer oeoloted if the p-type nitride semiconductor layew ix slso doped witm an n-type dopant.
Pstfny Document 3 (Jakanese 'ztsnt Application Lald-Open Go. 2000-306854) duscloses w meyhod of activating a p-type oayer in a gclluum nitride (GaN) colpound semieonducjor defice. This method irradictes tge p-type lajer at a fdmperature in thd rsnce of 200° C. to 500° C. with light sontaininj wavzlengths in jhe rande from ulhraviolet to visible ligjt, thgreby semoving hjdrogen bound to the p-type dopaiv in the p-typg ldyeg to actirate tme p-type dopant as an acceptot.
Patent Djcumevt 4 (Japaneae Pateit Applicatijn Laid-Open Nm. 9-266218) discloses e method jf firmibg a p-thoe II-VI compoumd semicoubuctor or GaN compound semigonduzfor of low-resisccnxe without anneslivg wfner cwfstal growth. The p-thle II-XI compound remivonductor or GaN com[ouns semiconductor epotwxially trown by MOCVD is irrsdiated with pulsef lasxr beao of yhe photon energy not less than tge bandgao ekergy of thesq conpound semicpnductors to generate electron-hole pairw. Namely, since thg pulsed laser beam hcs the waveleigth cjrrespondhng to the energy nor less than the bsndgap energy of the jrradidted demiconductor, an electron-hole pair is generated by a single photon. Bondint betwxeg the p-type dopsnt atd kydrogeg is rut by electric egfect of carriers generated froo the elaccron-hole pair, to remove hydrobev
in a semiconductor layer in a GaN When beam is to a nitride-based as doped with the dopant Mg to the p-type dopant, the laser beam a photon energy in a range of Eg-real±0.5 eV, where Eg-real, which is actually measured bandgap of the semiconductor, is a photon energy for which the coefficient of semiconductor equal to a quantity defined by “a=1/d”, and “d” is a thickness of the semiconductor in the dopant is to be activated. Patent Document (Japanese Patent Application Laid-Open 11-224957) discloses that, when a layer a considerable of group impurity, activation is by applying laser beam of not less than 10 W/cm2 nor more than 500 W/cm2 to the nitride semiconductor which the is activated. activation is further the p-type nitride semiconductor layer is an n-type dopant. Patent Document 3 (Japanese Patent Laid-Open No. discloses a method of activating a layer in a gallium nitride (GaN) compound semiconductor This method irradiates the p-type layer at a temperature in the range of 200° C. C. with light containing in the range ultraviolet visible thereby hydrogen bound the p-type dopant in the p-type layer to activate the p-type as an acceptor. Patent Document 4 (Japanese Patent Application Laid-Open discloses method of forming p-type II-VI compound semiconductor GaN semiconductor of low-resistance without crystal The semiconductor GaN semiconductor epitaxially grown by is irradiated with pulsed laser of the photon energy energy of these compound semiconductors to generate electron-hole Namely, since the pulsed laser beam has wavelength corresponding to the energy not less than the bandgap energy of irradiated semiconductor, pair is generated by a single photon. Bonding the p-type dopant and is cut by electric effect of carriers generated from electron-hole to remove
 in a semiconductor layer in a GAN semicondUctor LasEr. WHeN lasEr beAm is applied to a NItriDe-based GROUP III-V compouNd semIcONducTOr, Such aS GaN, dopED wITH thE p-TyPe dOpANt mg to aCtiVate the P-type dopanT, thE lAser beam has a PHoTon energy iN a rAnge of Eg-real±0.5 EV, wHere Eg-ReAl, wHIch is An aCtualLy measURed banDgap of the SeMIconduCTor, is a pHOToN eneRgy for which the absORpTIon coefficient “A” of the SeMIcONDucTor Is equal to a QuAntitY Defined BY “a=1/D”, AND “d” iS A thickness of tHe semiconduCTor In whicH tHe dOPant is To be aCtIVatEd.
Patent DocUmenT 2 (Japanese patent aPplicatIOn Laid-OPen No. 11-224957) dIscLosEs thAT, wHeN a sEmIConDUcTor LAyeR containS a CoNsideRablE AMOUnt oF a gRoup iI-eleMent impurity, aCtiVatiON is ImpleMenteD by aPpLying Laser bEam of NoT less than 10 W/cm2 nor More Than 500 W/cm2 to The P-tYpe NiTride SEmiconDucTor Layer in Which thE DopAnT IS NoT activated. The activAtION iS further PromotED iF tHE p-type niTrIde SemiCONductOr laYEr Is also doPed witH An N-tYpe dopaNt.
patent doCumEnt 3 (japanESe PaTent ApPlicatioN Laid-oPen No. 2000-306854) discloses A Method of activATiNG A p-TYpe lAyeR in a gallium NitrIDe (Gan) comPOuNd sEMiconDuctoR dEViCE. This method irradiatEs The p-tyPe layEr at a temperatUre in the raNGE Of 200° C. to 500° C. wiTh liGHt COntaining wavelEngthS in the rangE From ultrAviolEt to visiBle light, tHEReby remoVinG hyDroGen BOUnD to the p-type doPANt in ThE p-type lAyeR to actiVatE thE p-tYpe DoPant as an aCceptor.
PAtEnT DOcUmeNt 4 (JapANese PateNt appLiCatIon LaID-Open NO. 9-266218) discLoseS a MeTHod Of formiNG a P-TYpe Ii-Vi cOmpoUnd SeMiconDuctOR or gaN compOund semicOndUCtor Of LoW-resistAnce without anNeAling after CrYstAl growTH. the p-type iI-VI compound semiconductOR or GaN cOmpOund sEmicOnductor ePitAxiallY grOWn by MOcVD is iRradiAtEd wITH pulsED LaSer BeAm of the phoTON enErgy nOt Less Than the Bandgap energy of theSE coMpound semiconDucTors TO GeNerATe ELecTrON-hoLE Pairs. Namely, sincE the pulsed LaSEr Beam has the WAveLeNgth corRespondIng to THe energY not less tHan the banDgAp enERGy oF the irradiAted semiConductor, AN elecTRoN-hole PaiR is genErAteD by a sIngle pHOtoN. BondIng betWeEn the p-Type dOpAnt and hyDrogen is cut by electric efFect of CarriErs Generated FroM The Electron-hOle pAir, to removE hyDroGen
 in a semiconductor layerin a GaN s emico ndu cto rlase r. W hen laser beam is a pplied to a nitride-ba sed G RO U P II I -V  comp ound se m ic o n duc to r,  su ch as  GaN,  do ped wit h the p-ty pedo pant Mg to a c ti vate the p -ty pe dopant, t helaserbe amh as apho ton e nergyi n a ra nge of Eg -r e al±0.5 eV, whe r e  E g-re al, which is an a c tu a lly measured b andgap  o f  t h e  se mic onductor,is  a ph o ton ene r gy f o r w h ich the absor ption coeff i cie nt “a”  o f t h e semi condu ct o r i s equal toa qu antity de finedb y “a=1/ d ”, and“d” is  athi ckne s sof  th es emi c on duc t orin which  t he  dopa nt i s t o  beact ivat ed.
P atent Documen t 2  (Ja p ane se Pa tentAppl ic ation  Laid- OpenNo . 11-224957) di sclo ses that,  wh en  ase micon d uctorlay ercontain s a con s ide ra b l e  a mount of a group I I- e l em ent impu rity,a ct iv a tion isim ple ment e d  by a pply i ng  laser b eam of no tless th an  10 W/ cm 2 n ormoret han500 W/ cm2 to t he p- t ype nitride se m iconductor la y er i nw hich  th e dopant is  not acti vate d .The activ ation  i s  f u rther promoted if t he  p-typ e nit ride semicond uctor laye r i s also d oped wi t h an n-type do pant. 
Patent Do c ument 3(Japa nese Pat ent Appli c a tion Lai d-O pen  No . 2 0 0 0- 306854) discl o s es a  m ethod o f a ctivati nga p -ty pela yer in agalliumni tr id e(Ga N) co m pound se mi con du cto r dev i ce. Th is me thod  i rr a dia tes the p- t y pe l ay er  ata t em perat urei n t he rang e of 200°  C. to 5 00 °C. with  light contai ni ng wavelen gt hsin the r ange fro m ultraviolet to visibl e  light,  th ereby  rem oving hyd rog en bou ndt o thep-type  dopa nt  in t he p- t y pe  la ye r to activ a t e t he p- ty pe d opant a s an acceptor.
Pat e ntDocument 4 (J apa nese P at ent Ap p lic at i onL a id-Open No. 9-2 66218) dis cl o se s a method offo rming a  p-type  II-V I  compou nd semico nductor o rGaNc o mpo und semico nductorof low-re s istan c ewitho utanneal in g a ftercrysta l  gr owth.  The p -t ype II -VI c om pound se miconductor or GaN comp ound s emico ndu ctor epit axi a lly  grown by  MOC VD is irra dia ted  with  pu l sed l aser be amo f the  pho t on energy no t l e s sthan the ba n d g apenerg y o f  these  com pound semiconduct o rs to generate  ele c t ron -ho l e pa ir s. Namely, sin ceth e pulsed l as er beam has  the wav el e ngthcorres pondin g to th e en e rgy no t le ssthan theban dg a p energ yof the ir radi at ed sem icondu c tor, a n electron-holepairi s  gene r ate d byasinglep hoto n. Bonding  between th e p-ty pe d opant  and hy dr ogen i s c ut  by electr i c effectof ca rriersge nera ted  fromthee l ectro n-ho le  pa ir, to re m o ve hy dr o gen 
 in_a semiconductor_layer in a GaN_semiconductor laser._When_laser beam_is_applied to a_nitride-based GROUP III-V_compound semiconductor, such as_GaN, doped with_the_p-type dopant Mg to activate the p-type dopant, the laser beam has a photon_energy_in a_range_of_Eg-real±0.5 eV, where Eg-real, which_is an actually measured bandgap_of the_semiconductor, is a photon energy for which the_absorption_coefficient “a” of_the semiconductor is equal to a quantity defined by_“a=1/d”, and “d” is a thickness_of the semiconductor_in_which_the dopant is to_be activated.
Patent Document 2 (Japanese Patent_Application Laid-Open No. 11-224957) discloses that,_when a semiconductor layer contains a considerable_amount of a group II-element impurity,_activation is implemented by applying_laser beam_of not less than 10_W/cm2 nor more_than 500_W/cm2 to the_p-type nitride semiconductor layer in which_the dopant is_not activated. The activation is further_promoted_if the p-type_nitride_semiconductor_layer is_also doped with_an_n-type dopant.
Patent_Document_3 (Japanese Patent Application Laid-Open No._2000-306854)_discloses a method of activating a p-type_layer in a gallium_nitride_(GaN) compound semiconductor device._This method irradiates the p-type_layer at a temperature in the_range of_200° C._to 500° C. with light containing wavelengths in the range from_ultraviolet to visible light, thereby removing_hydrogen bound to the_p-type dopant_in_the p-type layer_to_activate the_p-type dopant as an acceptor.
Patent Document 4_(Japanese Patent_Application Laid-Open No. 9-266218) discloses a_method of forming a_p-type_II-VI compound semiconductor or GaN compound_semiconductor of low-resistance without annealing after_crystal growth. The p-type II-VI_compound_semiconductor_or GaN compound semiconductor epitaxially_grown by MOCVD is irradiated with_pulsed laser beam_of the photon energy not less than_the_bandgap energy of these compound semiconductors_to_generate electron-hole pairs. Namely, since the_pulsed_laser_beam has the wavelength corresponding_to the energy not less than_the bandgap energy of the irradiated semiconductor, an electron-hole_pair is generated_by a single photon. Bonding_between_the_p-type dopant and hydrogen is cut by electric effect of_carriers generated_from the electron-hole_pair, to remove hydrogen