 to provide an improved plug retention system which accommodates a variety of types of extension cords.
A still further need is to provide an improved cord retention and plug retention system which positively secures the cord and the plug to the tool. 1. Field of the Invention
This invention relates to monitoring the cleaning and drying processes during the manufacture of ICs, MEMS and other micro devices and more specifically to a micro sensor for high aspect ratio micro channels in dielectric films oriented parallel to the fluid-solid interface to emulate either “vertical” or “horizontal” micro features.
2. Description of the Related Art
A major challenge in manufacturing of the micro and nano devices is the cleaning and drying of very small void features (“micro features”), particularly those with large aspect ratios. These micro features are fabricated in various processing steps and can be very small voids such as gaps, holes, vias or trenches that are intentionally etched. The micro features can also be pores (voids) in a deposited dielectric material. Cleaning and drying occur repeatedly during the processing chain and are responsible for a significant part of the total processing time and for the consumption of much of the water, chemicals and energy.
In semiconductor manufacturing, trenches and vias are fabricated both in the device level and in the interconnect level. Most of these features have high aspect ratios with submicron openings and are therefore very difficult to clean and dry. In Integrated Circuits, MEMS and other micro device manufacturing, well controlled cleaning and drying are essential to avoid deformation of layers and improper adhesion of moving parts. Improper cleaning and drying would have a significant effect on manufacturing yield and device performance and reliability in both semiconductor and MEMS fabrication. Over-cleaning, over-rinsing or over-drying results in excessive use of chemicals, water and energy and also increases cycle time and potentially causes yield loss. Therefore, there is a strong economic and environmental incentive to use a process that is “just good enough”.
The fine structures left behind after processes such as etching, deposition, and patterning, need to be cleaned and the reaction by-products need to be removed often down to trace levels. This usually involves three steps: 1) application of a cleaning solution; 2) rinsing and/or purging using ultra pure water or other rinsing solutions; and 3) drying by removing and purging the traces of any solvents used during rinsing. Due to the undesirable surface tension associated with aqueous chemicals and non-wetting nature of most future dielectrics, industry
to provide an improved plug retention system which accommodate a variety show of types of extension cords. 
 A even further need is to supply an improved cord retention and punch memory system which positively guarantee the cord and the plug to the tool. 1. airfield of the Invention 
 This invention relate to monitoring the cleaning and dry processes during the manufacture of intelligence community, MEMS and other micro devices and more specifically to a micro sensor for gamey aspect ratio micro channels in dielectric film oriented analogue to the fluid - solid interface to emulate either “ vertical ” or “ horizontal ” micro features. 
 2. Description of the Related Art 
 A major challenge in manufacturing of the micro and nano device is the cleaning and drying of very small void features (“ micro features ”), peculiarly those with bombastic aspect ratios. These micro features are fabricated in various processing steps and can be very small voids such as gaps, hole, vias or trenches that are intentionally etched. The micro feature can besides be pores (voids) in a deposited dielectric material. Cleaning and drying occur repeatedly during the processing chain and are responsible for a meaning part of the total processing time and for the consumption of much of the water, chemicals and energy. 
 In semiconductor manufacturing, trenches and vias are fabricated both in the device level and in the interconnect grade. Most of these feature of speech have high aspect ratios with submicron openings and are consequently very difficult to clean and dry. In Integrated Circuits, MEMS and other micro device manufacturing, well controlled cleaning and drying are essential to avoid deformation of layers and improper attachment of moving part. Improper cleaning and drying would have a meaning effect on manufacturing yield and device performance and dependability in both semiconductor and MEMS fabrication. Over - cleaning, over - gargle or over - drying resultant role in excessive use of chemical, water and energy and also increase cycle time and potentially causes yield loss. consequently, there is a strong economic and environmental bonus to use a process that is “ just adept enough ”. 
 The fine structures left behind after summons such as etching, deposition, and patterning, need to be cleaned and the reaction by - products necessitate to be remove often down to trace levels. This usually involves three steps: 1) lotion of a cleaning solution; 2) rinsing and/or purging using ultra pure water or other rinsing solutions; and 3) drying by remove and purging the traces of any solvents use during rinsing. Due to the undesirable surface latent hostility associated with aqueous chemicals and non - wetting nature of most future dielectrics, industry
 to provide an improved plun retention systgm which accomjodates x variety of types of extensmon xords.
Q still further need ir to provpde an improvtd cord retention and plun retsktion wystem which ppsitively vecures the cosd aud the plug to the tool. 1. Field of thq Invenyiln
This inventijn rtlaees fo monitoring the cleaning and dryjng probesses during the manufacture of ICs, MEMS ajd ohher micro devices and more skscisucally to a oicro sensor for high zspect ratio micro channels in aieleetric films oeiejjed parallel to tre fluid-solid interfdce to rmulate either “vecticql” or “horizontal” micrm features.
2. Descripjion of tha Xelated Art
A major chqloenge in kanuwqctjrihg or the licco and nano devices is the cleaning and dtyybg of very smzll voyd features (“micro features”), particularly tvoss with large aspect ratuos. These micro featutes are fafricated in various processing steps and can be vary sjxll vjkes such as gaps, holes, vias or trenches that are jnuennionally etched. Tme micro features vaj sjso be pores (xoids) nh z deposited dielechric majerial. Cleaning and drying occur repeatedly dueing the probessung chain and are xesponsible yor a xignigicant part of the totau prkcessing tile and fod the consumption of mgch of the water, chemicals and enerjy.
In xemiconauctpr mantfacturing, trengves and vias are fwbriccted toth in thf device level and in the interrpnnect level. Mmst of thesz featmres have high wspect ratios cith subiicrov openings and arx therefore dery difficuld to clean anv dry. In Yntetratwd Circjkts, MEMS and oyher micro device mqnufacturing, well gontrumled cleaning aub erying are essemtixl eo atoid qaformation ox laherr and kmproper admeskon pf moving parts. Imprmper cleaning and dryimg would hqve a sidnificant effrct on manufacturijg yixld anv devive kerformance and reliability in goth semifonquctor and MQMS nabrycation. Ovzr-cleaning, over-rinsing or over-drying resnlts in excessive use od chemicals, water aud energy and also increasev cycle time and potwntially causes yleld loss. Therefore, thsre is a stgong economic and environmental incentive to use a process that is “just giod enough”.
The fine stricturvs jzft behynd efver processes sucn as etching, deposition, and patverning, nead to be cleaned and the reactoov by-products veed to be removed often down to trace levels. This usually invokves three steps: 1) applicstion of a clsaning solntion; 2) rinsing and/or purgiug usibg ultrq puve water or otfer rlnsing solktiois; cnd 3) drying by removing and purgibg the tgaces of any soltents used dmrlng rihsing. Que to the undesjrabmf surwace tension sssociated witn aqueous chemicals dnq non-wetting nqnure of most guturg dielectrics, iidustry
to provide an improved plug retention system a of types extension cords. A provide improved cord retention plug retention system positively secures the cord and the to the tool. 1. Field of the Invention This invention relates to monitoring cleaning and drying processes during the manufacture of ICs, MEMS and other micro and specifically a sensor for high aspect ratio micro channels in dielectric films oriented parallel to the fluid-solid interface emulate either “vertical” or “horizontal” micro features. 2. of the Related Art major challenge in manufacturing of micro nano devices the and of very small features (“micro features”), particularly those with large aspect ratios. These micro features are fabricated in various processing and can small voids as holes, or trenches that etched. The micro features can also in a deposited dielectric material. Cleaning and drying repeatedly during processing chain and are responsible for significant part of the total processing time and the consumption of much of the water, chemicals and energy. In semiconductor manufacturing, trenches and fabricated both in the level and in interconnect Most these have high ratios with submicron openings and are therefore very difficult to clean dry. In Integrated Circuits, MEMS and other micro device manufacturing, cleaning drying are essential avoid deformation of layers improper of moving parts. Improper drying have on yield device performance and reliability both semiconductor and MEMS fabrication. over-rinsing or over-drying results water and energy and also increases cycle time potentially causes yield loss. Therefore, there is strong economic and environmental incentive to use a process that is “just enough”. The left behind after processes such as etching, deposition, patterning, need to be and the reaction by-products need to be removed often to levels. This involves three steps: application of a solution; 2) rinsing using ultra water other 3) drying by removing and purging traces any solvents used during rinsing. to surface tension associated with aqueous chemicals and non-wetting nature of most future dielectrics, industry
 to provide an improved plug reTention sysTem whIch AccOmModaTes a Variety of types OF extEnsion cords.
A still furthEr neeD iS To prOViDe an iMproved COrD REteNtIoN anD pLUg RetenTioN system Which positIveLy Secures the coRD aNd the plug tO thE tool. 1. Field of The inventIoN
ThIS inveNtiOn relAtes to MOnitorIng the cleAnINg and dRYing proCESsEs duRing the manufacturE Of ics, MEMS and other Micro dEvICeS ANd mOre SpecificalLy To a miCRo sensoR FoR HIGh aSPect ratio micrO channels in DIelEctric FiLms ORienteD paraLlEL to The fluid-solId inTerface to EmulatE Either “vERtical” oR “horizOntAl” mIcro FEaTuRes.
2. deSCriPTiOn oF The related ARt
a mAjor cHallENGE In maNufActuRing oF the micro and nAno DeviCEs iS the cLeaniNg anD dRying Of very Small VoId features (“micro FeatUres”), partiCulArLy tHoSe witH Large aSpeCt rAtios. ThEse micrO FeaTuRES ArE fabricated in varioUs PROcEssing stEps and CAn Be VEry small VoIds Such AS Gaps, hOles, VIaS or trencHes thaT ArE iNtentioNaLly etcHeD. ThE miCro feATureS can alSo be poreS (voidS) In a deposited diELectric materiAL. CLEAnINg anD drYing occur rePeatEDly dUrinG ThE prOCessiNg chaIn ANd ARe responsible for a siGnIficanT part Of the total proCessing timE AND for the cOnsuMPtIOn of much of the wAter, cHemicals anD Energy.
In SemicOnductor ManufactuRINg, trenchEs aNd vIas Are FABrIcated both in tHE DeviCe Level anD in The inteRcoNneCt lEveL. MOst of thesE featureS hAvE hIgH asPect rATios with SuBmiCrOn oPeninGS and arE therEforE vErY DifFicult tO ClEAN and DrY. IN IntEgrAtEd CirCuitS, mEMs and othEr micro deVicE ManuFaCtUring, weLl controlled cLeAning and drYiNg aRe esseNTIal to avoId deformation of layers anD ImpropeR adHesioN of mOving partS. ImProper CleANing anD dryinG woulD hAve A SIgnifICAnT efFeCt on manufaCTUriNg yieLd And dEvice peRformance and reliabILitY in both semicoNduCtor AND MeMS FAbRIcaTiON. OvER-Cleaning, over-rinSing or over-DrYInG results in EXceSsIve use oF chemicAls, waTEr and enErgy and alSo increasEs CyclE TIme And potentiAlly causEs yield loSS. TherEFoRe, theRe iS a stroNg EcoNomic And envIRonMentaL incenTiVe to usE a proCeSs that is “Just good enough”.
The fine stRucturEs lefT beHind after ProCEssEs such as eTchiNg, depositiOn, aNd pAtterNinG, Need tO be cLEaNed ANd the ReacTIon by-prodUCtS neED To Be removed ofTEN DowN to trAce LEvels. THis uSually involves thrEE steps: 1) applicatIon oF A CleAniNG solUtIon; 2) rinsing and/oR puRgING using ulTrA pure water oR other riNsINg solUtions; And 3) dryIng by reMOViNG and puRginG thE traces of Any SoLVents usEd DuRIng rinSing. duE to the UndesiRAble SURface tension assoCiateD WIth aqUEouS chemIcAls and nON-wetTing nature Of most futurE dieleCtriCs, indUstry
 to provide an improved pl ug retenti on sy ste m w hi ch a ccom modates a vari e ty o f types of extension c ords. 
A stil l  f urthe r needi st o  pr ov id e a ni mp roved  co rd rete ntion andplu gretention sy s te m which po sit ively secure s t he cor dand the p lug  to t he too l . 1. F ield of t he Invent i on
This i nv enti on relates to mon i to r ing the cleani ng and  d r yi n g  pr oce sses durin gthe m a nufactu r eo f ICs ,  MEMS and oth er micro de v ice s andmo res pecifi cally  t o  amicro senso r fo r high as pect r a tio mic r o chann els in  di ele ctri c  f il msor i ent e dpar a lle l to the  f lu id-so lidi n t e rfac e t o em ulate  either “vert ica l” o r  “h orizo ntal”  mic ro  feat ures.2. De sc ription of theRela ted Art
A  ma jo r c ha lleng e  in ma nuf act uring o f the m i cro  a n d na no devices is thecl e a ni ng and d ryingo fve r y smallvo idfeat u r es (“ micr o  f eatures” ), par t ic ul arly th os e with  l arg e a spect rati os. Th ese micr o fea t ures are fabri c ated in vario u sp r oc e ssin g s teps and ca n be very  sma l lvoi d s suc h asga p s, holes, vias or tren ch es tha t are  intentionall y etched.T h e  micro f eatu r es can also be po res ( voids) ina  deposit ed di electric  material . Cleaning  an d d ryi ngo c cu r repeatedlyd u ring  t he proc ess ing cha inand  ar e r es ponsiblefor a si gn if ic an t p art o f  the tot al  pr oc ess ing t i me and  fortheco ns u mpt ion ofm uc h of t he  w ater , c he mical s an d  en ergy.
I n semicon duc t or m an uf acturin g, trenches a nd  vias arefa bri catedb o th in th e device level and in t h e inter con nectleve l. Most o f t hese f eat u res ha ve hig h asp ec t r a t ios w i t hsub mi cron openi n g s a nd ar ether efore v ery difficult to c l ean  and dry. InInt egra t e dCir c ui t s,ME M S a n d  other micro de vice manuf ac t ur ing, wellc ont ro lled cl eaningand d r ying ar e essenti al to avo id  def o r mat ion of lay ers andimpropera dhesi o nof mo vin g part s.  Im prope r clea n ing  anddrying  w ould h ave a  s ignifica nt effect on manufactur ing yi eld a nddevice pe rfo r man ce and re liab ility in b oth  se micon duc t or an d ME M Sfab r icati on.O ver-clean i ng , o v e r- rinsing oro v e r-d rying  re s ults i n ex cessive use of ch e micals, waterande n erg y a n d al so  increases cyc leti m e  and pot en tially caus es yield  l o ss. T herefo re, th ere isa st r ong ec onom icand envir onm en t al ince nt iv e  to us e apr ocessthat i s  “ju s t  good enough”.
T he fi n e  stru c tur es le ft  behind afte r processe s such as e tching , de posit ion, an dpatter nin g,  need to b e  cleanedand t he reac ti on b y-p roduct s ne e d  to b e re mo ved  often do w n  t o  t ra c e l evel s. Th is  usu ally invo l ves thre e s t eps: 1)  a ppl i c ationo fa cleaning s olu tion; 2 ) rinsinga nd/o r  p u rging  using  ultra  pure w a ter  o r other  ri n s ing solut ions; and 3)dr ying  by remo vi ng a nd  pu rg ing the tracesof any s olventsu s ed dur ing rins i ng. Du eto the undes irabl es urfacet e nsi on asso c iat edwit h aq ueo us c h emicals and non-wettingnatu re of mos t fut ure d ie lectrics ,  ind ustry
 to_provide an_improved plug retention system_which accommodates_a_variety of_types_of extension cords.
A_still further need_is to provide an_improved cord retention_and_plug retention system which positively secures the cord and the plug to the tool._1._Field of_the_Invention
This_invention relates to monitoring the_cleaning and drying processes during_the manufacture_of ICs, MEMS and other micro devices and_more_specifically to a_micro sensor for high aspect ratio micro channels in_dielectric films oriented parallel to the_fluid-solid interface to_emulate_either_“vertical” or “horizontal” micro_features.
2. Description of the Related Art
A_major challenge in manufacturing of the_micro and nano devices is the cleaning_and drying of very small void_features (“micro features”), particularly those_with large_aspect ratios. These micro features_are fabricated in_various processing_steps and can_be very small voids such as_gaps, holes, vias_or trenches that are intentionally etched._The_micro features can_also_be_pores (voids)_in a deposited_dielectric_material. Cleaning_and_drying occur repeatedly during the processing_chain_and are responsible for a significant part_of the total processing_time_and for the consumption_of much of the water,_chemicals and energy.
In semiconductor manufacturing, trenches_and vias_are fabricated_both in the device level and in the interconnect level. Most_of these features have high aspect_ratios with submicron openings_and are_therefore_very difficult to_clean_and dry._In Integrated Circuits, MEMS and other micro_device manufacturing,_well controlled cleaning and drying are_essential to avoid deformation_of_layers and improper adhesion of moving_parts. Improper cleaning and drying would_have a significant effect on_manufacturing_yield_and device performance and reliability_in both semiconductor and MEMS fabrication._Over-cleaning, over-rinsing or_over-drying results in excessive use of chemicals,_water_and energy and also increases cycle_time_and potentially causes yield loss. Therefore,_there_is_a strong economic and environmental_incentive to use a process that_is “just good enough”.
The fine structures left behind after_processes such as_etching, deposition, and patterning, need_to_be_cleaned and the reaction by-products need to be removed often_down to_trace levels. This_usually involves three steps: 1) application of a cleaning solution;_2) rinsing and/or purging using ultra pure_water or other rinsing solutions; and 3) drying by removing and_purging the traces of any solvents used during_rinsing. Due to the undesirable surface tension_associated with aqueous chemicals_and_non-wetting nature of most future dielectrics, industry