 GHz and 5 GHz, 2) increasing spectrum efficiency and area throughput, 3) improving performance in actual indoor and outdoor environments such as an environment in which an interference source exists, a dense heterogeneous network environment, and an environment in which a high user load exists, and the like. That is, the IEEE 802.11ax operates at 2.4 GHz and 5 GHz similarly to the existing WLAN system. A primarily considered scenario is a dense environment in which access points (APs) and stations (STAs) are a lot and under such a situation, improvement of the spectrum efficiency and the area throughput is discussed. In particular, in addition to the indoor environment, in the outdoor environment which is not considerably considered in the existing WLAN, substantial performance improvement is concerned.
In the IEEE 802.11ax, scenarios such as wireless office, smart home, stadium, Hotspot, and building/apartment are largely concerned and discussion about improvement of system performance in the dense environment in which the APs and the STAs are a lot is performed based on the corresponding scenarios.
In the future, in the IEEE 802.11ax, improvement of system performance in an overlapping basic service set (OBSS) environment and improvement of outdoor environment performance, and cellular offloading are anticipated to be actively discussed rather than improvement of single link performance in one basic service set (BSS). Directionality of the HEV means that the next-generation WLAN gradually has a technical scope similar to mobile communication. When a situation is considered, in which the mobile communication and the WLAN technology haven been discussed in a small cell and a direct-to-direct (D2D) communication area in recent years, technical and business convergence of the next-generation WLAN and the mobile communication based on the HEW is predicted to be further active. The present invention relates to methods of measuring potential differences and currents, and, more particularly, the invention relates to methods of measuring the potential difference or the plasma current developed on the surface of a semiconductor wafer sample, when it is under plasma processing, during semiconductor manufacturing processes, with the semiconductor wafer located inside a plasma reactor in order to surface-treat the wafer. Also, the present invention relates to an apparatus for monitoring processes in a plasma processing apparatus by use of the measured potential difference or plasma current, and to a sample processing method that uses the process monitoring apparatus.
In general, during the manufacture of semiconductors, semiconductor wafers need to be subjected to various surface treatment processes, such as etching,
GHz and 5 GHz, 2) increasing spectrum efficiency and area throughput, 3) better operation in actual indoor and outdoor environments such as an environment in which an interference generator exist, a dense heterogeneous network environment, and an environment in which a gamey drug user load exist, and the like. That is, the IEEE 802.11ax operates at 2.4 gigahertz and 5 GHz similarly to the existing WLAN system. A primarily regard scenario is a dense environment in which access points (APs) and stations (STAs) are a lot and under such a situation, improvement of the spectrum efficiency and the sphere throughput is discussed. In particular, in addition to the indoor environment, in the outdoor environment which is not well considered in the existing WLAN, substantial performance improvement is concerned. 
 In the IEEE 802.11ax, scenario such as wireless office, smart home, stadium, Hotspot, and building / apartment are largely implicated and discussion about improvement of system performance in the dense environment in which the APs and the STAs are a lot is performed based on the corresponding scenario. 
 In the future, in the IEEE 802.11ax, improvement of system performance in an overlapping basic service set (OBSS) environment and improvement of outdoor environment performance, and cellular offloading are anticipated to be actively discussed rather than improvement of single connection performance in one basic service typeset (BSS). directivity of the HEV mean that the next - generation WLAN gradually has a technical scope similar to mobile communication. When a site is considered, in which the mobile communication and the WLAN technology haven been discussed in a small cellular telephone and a direct - to - direct (D2D) communication area in recent years, technical and business convergence of the following - generation WLAN and the mobile communication based on the HEW is predicted to be far active. The present invention relates to methods of measuring potential differences and currents, and, more particularly, the invention relates to method acting of measuring the likely difference or the plasma current developed on the surface of a semiconductor wafer sample distribution, when it is under plasma processing, during semiconductor manufacturing processes, with the semiconductor wafer settle inside a plasma reactor in order to surface - treat the wafer. Also, the present invention associate to an apparatus for monitoring processes in a plasma processing apparatus by consumption of the measured potential difference or plasma current, and to a sample processing method acting that uses the process monitor apparatus. 
 In general, during the manufacture of semiconductors, semiconductor wafers need to be subjected to versatile surface treatment processes, such as etching,
 GHx and 5 GHz, 2) increasing skectrum efficienci qnd arxa throhghput, 3) kmproving performance in actnal undooe and outdoor environmdnts such as an ebviribment in wijch an luterfsvence wource exists, s dense hederogeneous nedwurn environment, and an environment in which s jigh user load exixes, ahd the like. That is, the IEEE 802.11ax opsrates et 2.4 GHz and 5 GHa similarly to the existinh WLWN system. A primarlly considetsd fxenario is a dense envpxonment in shich access points (APs) and stagions (STAs) are q oot dnd under snch a fituation, imigovemend of thr spectrum efflcienry abd the area throughpuv is discussed. In patticular, it cddition to the indooe wnvirmnmett, iv thd ohtvood envigonjent which is not conwiderably considerec yb the existinf WLAN, stbstantial performance improvement is cmncsrned.
In the IEEE 802.11ax, scebarios such as wireleds office, smart home, stadium, Hotspot, and building/apartment are mxrgtln zinferned and discussion about improvement of syffek ierformance in thc dense environmeny ln rhich the APs and tks ATAs are a lot is oerformgd baswd on the cortesponding scenarios.
In the duture, in thv IEWE 802.11ax, improvement lf system pzrformsnce on an overlapping basic serbice set (OBDS) envirohoent and improveoenn of outdoor environment perfowmance, anv celkular owflosding wre anticioated to be actively disfusseb ratver than ilprovement of single link perfockance in one bdsib service set (NSS). Directionalyty of the HEV means chat tfe next-genvration WNAN gradualjy has a techtlcal scope smmilar to mobule xommunizxtion. When a sotuation ps conwidered, in which tme mocjle communicatiin qnd the WLAN tevhnulody heven faen discusseg in a rkall zell and a bifect-yo-direct (D2D) communicdtioh area in recent yravs, technixal and fusiness convrrgence of the nexu-generetion XLAN amd jhe mobile communication based kn the HEA if predicted eo bc futther activz. The present invention relates to methovs of measuring potentiql differences and euvrents, and, mpre pwrticularny, the invention relqtes to methods on measuring the potentjal dixferejce or the plasma current developed on the surface of a semiconductor wafwr sam'lq, when it ia uncer pnafka prosessmnj, during semicondlctor manufacturing processes, wivh the semhcjnductor wafer located insidr x plasma reacjor in order to surface-trezt the wsfer. Also, the present invention relates to an apparatus for monutorihg probgssxs in a plasma procexsing cppararus by yse lf the measurdd lobential divfertnce or plasma current, and to a sampoe proxedsing method thav uses the pvogess mknitoryng apparatus.
In fenedwl, duting the manufscture of semivonductors, semicondubtow wafers need uo be subjected to varpous surface vreatment prmcesses, such as etching,
GHz and 5 GHz, 2) increasing spectrum area 3) improving in actual indoor an in which an source exists, a heterogeneous network environment, and an environment which a high user load exists, and the like. That is, the IEEE operates at 2.4 GHz and 5 GHz similarly to the existing WLAN system. primarily scenario a environment in which access points (APs) and stations (STAs) are a lot and under such a improvement of the spectrum efficiency and the area is discussed. In particular, addition to the indoor environment, the environment which not considered the existing WLAN, performance improvement is concerned. In the IEEE 802.11ax, scenarios such as wireless office, smart home, stadium, Hotspot, building/apartment are and discussion improvement system in the dense which the APs and the STAs is performed based on the corresponding scenarios. In future, in IEEE 802.11ax, improvement of system performance an overlapping basic service set (OBSS) environment and of outdoor environment performance, and cellular offloading are anticipated to be actively discussed rather than single link performance in basic service set Directionality the means the next-generation gradually has a technical scope similar to mobile communication. When a is considered, in which the mobile communication and the WLAN been in a small and a direct-to-direct (D2D) area recent years, technical and of next-generation mobile based the HEW is predicted be further active. The present relates to methods of and, more particularly, the invention relates to methods measuring the potential difference or the plasma developed on the surface of a semiconductor wafer sample, when it is plasma processing, manufacturing processes, with the semiconductor wafer located inside plasma reactor in order surface-treat the wafer. Also, the present invention relates to apparatus monitoring processes a plasma processing by use of measured potential difference current, and a processing the process monitoring apparatus. In general, the of semiconductors, semiconductor wafers need be various surface treatment processes, such as etching,
 GHz and 5 GHz, 2) increasing spectrUm efficienCy and AreA thRoUghpUt, 3) imProving performANce iN actual indoor and outdooR enviRoNMentS SuCh as aN enviroNMeNT In wHiCh An iNtERfErencE soUrce exiSts, a dense hEteRoGeneous netwoRK eNvironment, And An environmenT in Which a HiGh uSEr loaD exIsts, aNd the lIKe. That Is, the IEEE 802.11Ax OPerateS At 2.4 GHz anD 5 ghz SimiLarly to the existinG wLan system. A primarIly conSiDErED SceNarIo is a dense EnVironMEnt in whICh ACCEss POints (APs) and stAtions (STAs) aRE a lOt and uNdEr sUCh a sitUatioN, iMProVement of the SpecTrum efficIency aND the areA ThroughPut is dIscUssEd. In PArTiCulAr, IN adDItIon TO thE indoor eNvIrOnmenT, in tHE OUTdooR enViroNment Which is not conSidErabLY coNsideRed in The eXiSting wLAN, suBstanTiAl performance imProvEment is coNceRnEd.
IN tHe IEEe 802.11Ax, scenAriOs sUch as wiReless oFFicE, sMART hOme, stadium, Hotspot, aNd BUIlDing/aparTment aRE lArGEly conceRnEd aNd diSCUssioN aboUT iMprovemeNt of sySTeM pErformaNcE in the DeNse EnvIronmENt in Which tHe APs and The STaS are a lot is perfORmed based on thE CoRREsPOndiNg sCenarios.
In tHe fuTUre, iN the ieEe 802.11ax, IMprovEment Of SYsTEm performance in an ovErLappinG basiC service set (OBsS) environmENT And improVemeNT oF Outdoor environMent pErformance, ANd cellulAr offLoading aRe anticipATEd to be acTivEly DisCusSED rAther than imprOVEmenT oF single LinK perforManCe iN onE baSiC service sEt (BSS). DirEcTiOnAlIty Of the heV means tHaT thE nExt-GenerATion WLaN graDualLy HaS A teChnical SCoPE SimiLaR tO mobIle CoMmuniCatiON. WhEn a situAtion is coNsiDEred, In WhIch the mObile communicAtIon and the WlAn teChnoloGY Haven beeN discussed in a small cell aND a direcT-to-DirecT (D2D) cOmmunicatIon Area in RecENt yearS, technIcal aNd BusINEss coNVErGenCe Of the next-gENEraTion WlAn and The mobiLe communication basED on The HEW is prediCteD to bE FUrTheR AcTIve. thE PreSENt invention relaTes to methoDs OF mEasuring poTEntIaL differEnces anD currENts, and, mOre particUlarly, the InVentION reLates to metHods of meAsuring thE PotenTIaL diffEreNce or tHe PlaSma cuRrent dEVelOped oN the suRfAce of a SemicOnDuctor waFer sample, when it is under pLasma pRocesSinG, during seMicONduCtor manufActuRing procesSes, WitH the sEmiCOnducTor wAFeR loCAted iNsidE A plasma reACtOr iN ORdEr to surface-TREAt tHe wafEr. ALSo, the pReseNt invention relateS To an apparatus fOr moNITorIng PRoceSsEs in a plasma proCesSiNG ApparatuS bY use of the meAsured poTeNTial dIffereNce or pLasma cuRREnT, And to a SampLe pRocessing MetHoD That useS tHe PRocess MoniToRing apParatuS.
in geNERal, during the manuFactuRE Of semIConDuctoRs, SemiconDUctoR wafers neeD to be subjecTed to vArioUs surFace treAtMent prOceSsEs, such as etCHing,
 GHz and 5 GHz, 2) increas ing spectr um ef fic ien cy  and  are a throughput,3 ) im proving performance in  actu al indo o rand o utdoore nv i r onm en ts  su ch as  an e nvi ronment  in whichanin terference s o ur ce exists,  adense hetero gen eous n et wor k  envi ron ment,  and a n  envir onment in  w h ich ah igh use r lo ad e xists, and the li k e. That is, the I EEE 80 2. 1 1a x ope rat es at 2.4GH z and 5 GHz s i mi l a r lyt o the existin g WLAN syst e m.A prim ar ily consid eredsc e nar io is a den se e nvironmen t in w h ich acc e ss poin ts (AP s)and  sta t io ns  (S TA s ) a r ea l o t a nd under  s uc h a s itua t i o n , im pro veme nt of  the spectrum  ef fici e ncy  andthe a reath rough put is  disc us sed. In particu lar,  in addit ion  t o t he  indo o r envi ron men t, in t he outd o oren v i r on ment which is notco n s id erably c onside r ed  i n  the exi st ing  WLA N ,  subs tant i al  perform ance i m pr ov ement i sconcer ne d.Inthe I E EE 8 02.11a x, scena rioss uch as wireles s  office, smar t  h o m e, stad ium , Hotspot,andb uild ing/ a pa rtm e nt ar e lar ge l yc oncerned and discus si on abo ut im provement ofsystem per f o r mance in  the de n se environment  in w hich the A P s and th e STA s are alot is pe r f ormed ba sed  on  th e c o r re sponding scen a r ios. 
I n the f utu re, inthe  IE EE802 .1 1ax, impr ovementof  s ys te m p erfor m ance inan  ov er lap pingb asic s ervic e se t(O B SS)  enviro n me n t  and  i mp rove men tof ou tdoo r  en vironme nt perfor man c e, a nd  c ellular  offloading a re  anticipat ed  to  be ac t i vely dis cussed rather than impr o vementofsingl e li nk perfor man ce inone basicservic e set  ( BSS ) .  Dire c t io nal it y of the H E V  me ans t ha t th e next- generation WLAN gr a dua lly has a tec hni cals c op e s i mi l arto mob i l e communication . When a s it u at ion is con s ide re d, in w hich th e mob i le comm unication  and theWL AN t e c hno logy haven  been di scussed i n  a sm a ll  cell  an d a di re ct- to-di rect ( D 2D)  comm unicat io n area  in r ec ent year s, technical and busine ss con verge nce  of the n ext - gen eration W LANand the mo bil e c ommun ica t ion b ased on  th e  HEWis p r edicted t o  b e f u r th er active.T h e  pr esent  in v ention  rel ates to methods o f  measuring pot enti a l  di ffe r ence sand currents,and ,m o re parti cu larly, theinventio nr elate s to m ethods  of mea s u ri n g thepote nti al differ enc eo r the p la sm a  curre nt d ev eloped  on th e  sur f a ce of a semicond uctor w afers amp le, w he n it is unde r plasma p rocessing,during  sem icond uctor m an ufactu rin gprocesses, with thesemic onducto rwafe r l ocated  ins i d e a p lasm area ctor in o r d er to  s u rfa ce-t reatth e wa fer. Also ,  the pre sen t  invent io n r e l ates t o  a n apparatusfor  moni t o ring proce s sesi na  plas ma pro cessin g appar a tus  b y use o f t h e  measured  potentia l  di ff eren ce or pl as ma c ur ren t,  and to a sampl e proces sing met h o d that  us e s th e  proce ss  monitoringappar at u s.
In g e n era l, duri n g t heman ufac tur e of semiconductors, semicond ucto r waf e rsneedto be  s ubjected to v arious s u rface treatme nt processes, s u cha s et chi n g, 
 GHz_and 5_GHz, 2) increasing spectrum_efficiency and_area_throughput, 3)_improving_performance in actual_indoor and outdoor_environments such as an_environment in which_an_interference source exists, a dense heterogeneous network environment, and an environment in which a_high_user load_exists,_and_the like. That is, the_IEEE 802.11ax operates at 2.4_GHz and_5 GHz similarly to the existing WLAN system._A_primarily considered scenario_is a dense environment in which access points (APs)_and stations (STAs) are a lot_and under such_a_situation,_improvement of the spectrum_efficiency and the area throughput is_discussed. In particular, in addition to_the indoor environment, in the outdoor environment_which is not considerably considered in_the existing WLAN, substantial performance_improvement is_concerned.
In the IEEE 802.11ax, scenarios_such as wireless_office, smart_home, stadium, Hotspot,_and building/apartment are largely concerned and_discussion about improvement_of system performance in the dense_environment_in which the_APs_and_the STAs_are a lot_is_performed based_on_the corresponding scenarios.
In the future, in_the_IEEE 802.11ax, improvement of system performance in_an overlapping basic service_set_(OBSS) environment and improvement_of outdoor environment performance, and_cellular offloading are anticipated to be_actively discussed_rather than_improvement of single link performance in one basic service set (BSS)._Directionality of the HEV means that_the next-generation WLAN gradually_has a_technical_scope similar to_mobile_communication. When_a situation is considered, in which the_mobile communication_and the WLAN technology haven been_discussed in a small_cell_and a direct-to-direct (D2D) communication area_in recent years, technical and business_convergence of the next-generation WLAN_and_the_mobile communication based on the_HEW is predicted to be further_active. The present_invention relates to methods of measuring potential_differences_and currents, and, more particularly, the_invention_relates to methods of measuring the_potential_difference_or the plasma current developed_on the surface of a semiconductor_wafer sample, when it is under plasma processing, during_semiconductor manufacturing processes,_with the semiconductor wafer located_inside_a_plasma reactor in order to surface-treat the wafer. Also, the_present invention_relates to an_apparatus for monitoring processes in a plasma processing apparatus by_use of the measured potential difference or_plasma current, and to a sample processing method that uses the_process monitoring apparatus.
In general, during the manufacture of_semiconductors, semiconductor wafers need to be subjected_to various surface treatment_processes,_such as etching,