, more of the radiation emitted by the active layer structure in the direction of the substrate strikes the lateral face of the transparent layer at an angle that is smaller than the total reflection angle.
However, substantial losses of light occur with the chip geometry proposed in U.S. Pat. No. 5,233,204. One cause of these losses is total reflection at the boundary from the active layer structure to the thick transparent epitaxial layer (refractive indexactive layer> refractive indexwindow) and subsequent absorption in the active layer sequence. Another cause is absorption in the radiation-absorbing epitaxial substrate. In addition, considerable additional technical outlay is involved in fabricating the window layer as a thick transparent epitaxial layer.
To improve the coupling-out of light, it has been proposed elsewhere to fabricate semiconductor devices having, for example, a triangular or parallelogramoid lateral cross section; in this regard, see the publication Song Jae Lee, Seog Won Song, “Efficiency Improvement in Light-Emitting Diodes Based on Geometrically Deformed Chips,” SPIE Conference on Light-Emitting Diodes, San Jose, Calif., January 1999, pages 237 to 248. In these arrangements, reflection in the chip is increased because the angles of reflection change frequently. At the same time, however, the radiation-generating layer, the contacts, or other layers of the semiconductor device must be improved so that they absorb as little light as possible. 1. Field of the Invention
The present invention pertains to radiation-curable water-soluble combinations of polyester resins with high mass fraction of solids.
2. Description of the Related Art
From EP-A 0 574 775 self-emulsifying polymerizable binders are known which can be made by reacting pre-polymers containing (meth)acryloyl groups (A) and unsaturated polyesters (B) which are emulsifiable in water with multifunctional isocyanates. The preferred pre-polymers (A) containing (meth)acryloyl groups are polyester (meth)acrylates which are condensation products of aromatic and/or aliphatic dicarboxylic acids (A1), especially those of malonic, succinic, glutaric, adipic, sebacic, hexahydrophthalic, terephtalic, maleic, fumaric, citraconic and itaconic acids or their anhydrides, of polyols (A2), especially glycol, 1,2- and
, more of the radiation emitted by the active layer structure in the steering of the substrate strike the lateral face of the transparent layer at an slant that is smaller than the total reflection slant. 
 However, hearty losses of light occur with the chip geometry nominate in U.S. Pat. No. 5,233,204. One cause of these loss is total reflection at the boundary from the active layer structure to the thick crystalline epitaxial layer (refractive indexactive layer > deflective indexwindow) and subsequent absorption in the active layer succession. Another cause is assimilation in the radiation - absorb epitaxial substrate. In addition, considerable additional technical outlay is involve in fabricating the window layer as a thick transparent epitaxial layer. 
 To improve the coupling - out of light, it has been proposed elsewhere to fabricate semiconductor devices having, for example, a triangular or parallelogramoid lateral cross section; in this respect, see the publication Song Jae Lee, Seog Won Song, “ Efficiency Improvement in Light - utter Diodes Based on Geometrically Deformed Chips, ” SPIE Conference on Light - Emitting Diodes, San Jose, Calif., January 1999, pages 237 to 248. In these arrangements, mirror image in the chip is increased because the angles of reflection variety frequently. At the same time, however, the radiation - generating layer, the contacts, or other layers of the semiconductor device must be improved so that they absorb as short light as potential. 1. battlefield of the Invention 
 The present invention pertains to radiation - curable water - soluble combinations of polyester resins with high mass fraction of solid. 
 2. Description of the Related Art 
 From EP - A 0 574 775 self - emulsifying polymerizable binders are known which can be take by reacting pre - polymer containing (meth)acryloyl groups (A) and unsaturated polyesters (B) which are emulsifiable in body of water with multifunctional isocyanates. The preferable pre - polymers (deoxyadenosine monophosphate) containing (meth)acryloyl groups are polyester (meth)acrylates which are condensing products of aromatic and/or aliphatic dicarboxylic acid (A1), especially those of malonic, succinic, glutaric, adipic, sebacic, hexahydrophthalic, terephtalic, maleic, fumaric, citraconic and itaconic acids or their anhydrides, of polyols (A2), especially glycol, 1,2- and
, moge of the radiation emitued by the active layer vtructhre in tfe direction of the substratx steikes the lateral face of tfe transpwrent later et an angle that is smaller thzk the votal reflectiok angle.
Howeeer, substantian uodses of light occur with the chip gqometry pgoposed in U.S. Kat. Np. 5,233,204. Ons cause of these losses is total rsflectimn at the boumdary from the active layeg stgucture to the thifk transparght qpitaxial laydr (refractpre indexactjve layer> refractive indexwindod) and subsequenj zbdmrption in vhe acnive layer sequence. Atother vause is absorition in the radiation-absorbiig epitaxial substraje. In addidikn, considerable aedutiondl tachnkxal ouulab ia invopvev in fabriczting the wundow layer as a thoch transparent spitaxyaj layer.
To improve the coupling-out of licht, it has been proposed eosewhere to fabricate semicondtctor devices having, for example, a triangular or [aralmdloyvwoiif lateral cross section; in this regard, see thq pibkication Song Mae Lee, Seog Won Spnh, “Rsficiency Imptovemenc ih Light-Emitting Dildes Bafed ob Geometrycalky Deformed Chips,” SPIE Confwrence on Liyht-Wmitting Diodes, Sau Jose, Calif., Janoary 1999, lages 237 to 248. In these arrcngemehts, reflectlon in ths chip is increasdd necduse the angles of reflectyon changx freauently. At jhe samq time, howfver, bve radiation-generahing pafer, the cojtacts, or other layers of the sxkiconductor ceeicv must be imprpved so that ehey absorb as little lighg as possigle. 1. Fixld of the Igvention
The psgsent inventimn pertayns ro rqdiatiov-zurable water-spluble combinations of polyester resiks wijh high mass fraccnob of solids.
2. Desvriotijn oh the Selated Art
Fsom DP-A 0 574 775 seuf-emulsifyikg oolykerizable binders ara knkwn which can be msdc by reacjing pre-pjlymers contaoning (meth)acryloyl grou's (A) aid unsstutated polyesters (B) which are emhlsifiablf ik water with iultlfunstional ispcyanates. The preferred pre-polymers (A) cintaining (meth)acriloyl groups are polygsttr (meth)acrylaves whych are cmndensation products of aromatic and/ov aliphatic dicarboxyljc acigs (A1), fspecially those of malonic, succinic, glutaric, adipic, sebacic, hexahydrophtyalic, vewephtalic, mzleiv, fumdrnc, eitracogic env itaconic acids pr their anhydrides, of polyols (E2), especialny glycol, 1,2- and
, more of the radiation emitted by layer in the of the substrate the layer at an that is smaller the total reflection angle. However, substantial of light occur with the chip geometry proposed in U.S. Pat. No. 5,233,204. cause of these losses is total reflection at the boundary from the active structure the transparent layer (refractive indexactive layer> refractive indexwindow) and subsequent absorption in the active layer sequence. Another cause absorption in the radiation-absorbing epitaxial substrate. In addition, additional technical outlay is in fabricating the window layer a transparent epitaxial To the of light, it been proposed elsewhere to fabricate semiconductor devices having, for example, a triangular or parallelogramoid lateral cross section; this regard, publication Song Lee, Won “Efficiency Improvement in Based on Geometrically Deformed Chips,” SPIE Diodes, San Jose, Calif., January 1999, pages 237 248. In arrangements, reflection in the chip is because the angles of reflection change frequently. At same time, however, the radiation-generating layer, the contacts, or other layers of the semiconductor device improved so that they as little light possible. Field the The present pertains to radiation-curable water-soluble combinations of polyester resins with high mass of solids. 2. Description of the Related Art From EP-A 775 polymerizable binders are which can be made reacting containing (meth)acryloyl groups (A) polyesters which water multifunctional The preferred pre-polymers (A) (meth)acryloyl groups are polyester (meth)acrylates are condensation products of (A1), especially those of malonic, succinic, glutaric, adipic, hexahydrophthalic, terephtalic, maleic, fumaric, citraconic and itaconic or their anhydrides, of polyols (A2), especially glycol, 1,2- and
, more of the radiation emitted By the activE layeR stRucTuRe in The dIrection of the sUBstrAte strikes the lateral faCe of tHe TRansPArEnt laYer at an ANgLE ThaT iS sMalLeR ThAn the TotAl refleCtion angle.
howEvEr, substantiaL LoSses of lighT ocCur with the chIp gEometrY pRopOSed in u.S. PAt. No. 5,233,204. ONe causE Of thesE losses is ToTAl reflECtion at THE bOundAry from the active lAYeR Structure to the Thick tRaNSpAREnt EpiTaxial layeR (rEfracTIve indeXAcTIVE laYEr> refractive iNdexwindow) aND suBsequeNt AbsORption In the AcTIve Layer sequenCe. AnOther causE is absORption iN The radiAtion-aBsoRbiNg epITaXiAl sUbSTraTE. IN adDItiOn, considErAbLe addItioNAL TEchnIcaL outLay is Involved in fabRicAtinG The WindoW layeR as a ThIck trAnsparEnt epItAxial layer.
To impRove The coupliNg-oUt Of lIgHt, it hAS been pRopOseD elsewhEre to faBRicAtE SEMiConductor devices haViNG, FoR example, A trianGUlAr OR paralleLoGraMoid LATeral CrosS SeCtion; in tHis regARd, SeE the pubLiCation soNg JAe LEe, SeoG won SOng, “EffIciency IMprovEMent in Light-EmiTTing Diodes BasED oN gEoMEtriCalLy Deformed CHips,” spIE COnfeREnCe oN light-emittInG diODes, San Jose, Calif., JanuArY 1999, pages 237 To 248. In tHese arrangemeNts, reflectION In the chiP is iNCrEAsed because the AngleS of reflectIOn change FrequEntly. At tHe same timE, HOwever, thE raDiaTioN-geNERaTing layer, the cONTactS, oR other lAyeRs of the SemIcoNduCtoR dEvice must Be improvEd So ThAt TheY absoRB as littlE lIghT aS poSsiblE. 1. field oF the INvenTiOn
tHe pResent iNVeNTIon pErTaIns tO raDiAtion-CuraBLe wAter-solUble combiNatIOns oF pOlYester rEsins with high MaSs fraction Of SolIds.
2. DesCRIption of The Related Art
From EP-A 0 574 775 selF-EmulsifYinG polyMeriZable bindErs Are knoWn wHIch can Be made By reaCtIng PRE-polyMERs ConTaIning (meth)aCRYloYl groUpS (A) anD unsatuRated polyesters (B) whICh aRe emulsifiablE in WateR WItH muLTiFUncTiONal ISOcyanates. The preFerred pre-pOlYMeRs (A) containINg (mEtH)acryloYl groupS are pOLyester (Meth)acrylAtes which ArE conDENsaTion producTs of aromAtic and/or ALiphaTIc DicarBoxYlic acIdS (A1), eSpeciAlly thOSe oF maloNic, sucCiNic, gluTaric, AdIpic, sebaCic, hexahydrophthalic, terEphtalIc, malEic, Fumaric, ciTraCOniC and itacoNic aCids or theiR anHydRides, Of pOLyols (a2), espECiAllY GlycoL, 1,2- and
, more of the radiation em itted by t he ac tiv e l ay er s truc ture in the di r ecti on of the substrate st rikes  t h e la t er al fa ce of t h et r ans pa re ntla y er  at a n a ngle th at is smal ler  t han the tota l  r eflectionang le.
However,  su bstant ia l l o ssesoflight  occur with t he chip g eo m etry p r oposedi n  U .S.Pat. No. 5,233,20 4 .O ne cause of th ese lo ss e si s  to tal  reflectio nat th e  bounda r yf r o m t h e active laye r structure tothe th ic k t r anspar ent e pi t axi al layer (r efra ctive ind exacti v e layer >  refrac tive i nde xwi ndow )  a nd  su bs e que n tabs o rpt ion in t he  a ctive  lay e r s eque nce . An other  cause is abs orp tion inthe r adiat ion- ab sorbi ng epi taxia lsubstrate. In a ddit ion, cons ide ra ble  a dditi o nal te chn ica l outla y is in v olv ed i n  f abricating the win do w la yer as a  thick tr an s parent e pi tax iall a yer.To i m pr ove thecoupli n g- ou t of li gh t, itha s b een  prop o sedelsewh ere to f abric a te semiconduct o r devices hav i ng , fo r  exa mpl e, a triang ular or p aral l el ogr a moidlater al cr o ss section; in this  r egard,  seethe publicati on Song Ja e L ee, Seog  Won So n g, “Efficiency  Impr ovement in Light-Em ittin g Diodes  Based on G eometric all y D efo rme d Ch ips,” SPIE Co n f eren ce  on Lig ht- Emittin g D iod es,  Sa nJose, Cal if., Jan ua ry  1 99 9,pages 237 to 2 48 . I nthe se ar r angeme nts,refl ec ti o n i n the c h ip i s in cr ea sedbec au se th e an g les  of ref lection c han g e fr eq ue ntly. A t the same ti me , however,  t heradiat i o n-genera ting layer, the contact s , or ot her  laye rs o f the sem ico nducto r d e vice m ust be  impr ov eds o  that t he y a bs orb as lit t l e l ightas  pos sible.1. Field of the In v ent ion
The prese ntinve n t io n p e rt a ins  t o  ra d i ation-curable w ater-solub le co mbinations ofpo lyester  resins  with high ma ss fracti on of sol id s.
2 . Des cription o f the Re lated Art FromE P- A 0 5 74775 se lf -em ulsif ying p o lym eriza ble bi nd ers ar e kno wn  which c an be made by reactingpre-po lymer s c ontaining  (m e th) acryloylgrou ps (A) and  un sat urate d p o lyest ers( B)  wh i ch ar e em u lsifiable in  wa t e rwith multif u n c tio nal i soc y anates . Th e preferred pre-p o lymers (A) con tain i n g ( met h )acr yl oyl groups are  po ly e s ter (met h) acrylates w hich are  c o ndens ationproduc ts of a r o ma t ic and /orali phatic di car bo x ylic ac id s( A1), e spec ia lly th ose of malo n i c, succinic, glu taric , adipi c , s ebaci c,  hexahy d roph thalic, te rephtalic,maleic , fu maric , citra co nic an d i ta conic acid s  or their  anhy drides,  o f po lyo ls (A2 ), e s p ecial ly g ly col , 1,2- an d 
, more_of the_radiation emitted by the_active layer_structure_in the_direction_of the substrate_strikes the lateral_face of the transparent_layer at an_angle_that is smaller than the total reflection angle.
However, substantial losses of light occur with_the_chip geometry_proposed_in_U.S. Pat. No. 5,233,204. One_cause of these losses is_total reflection_at the boundary from the active layer structure_to_the thick transparent_epitaxial layer (refractive indexactive layer> refractive indexwindow) and subsequent_absorption in the active layer sequence._Another cause is_absorption_in_the radiation-absorbing epitaxial substrate._In addition, considerable additional technical outlay_is involved in fabricating the window_layer as a thick transparent epitaxial layer.
To_improve the coupling-out of light, it_has been proposed elsewhere to_fabricate semiconductor_devices having, for example, a_triangular or parallelogramoid_lateral cross_section; in this_regard, see the publication Song Jae_Lee, Seog Won_Song, “Efficiency Improvement in Light-Emitting Diodes_Based_on Geometrically Deformed_Chips,”_SPIE_Conference on_Light-Emitting Diodes, San_Jose,_Calif., January_1999,_pages 237 to 248. In these_arrangements,_reflection in the chip is increased because_the angles of reflection_change_frequently. At the same_time, however, the radiation-generating layer,_the contacts, or other layers of_the semiconductor_device must_be improved so that they absorb as little light as possible._1. Field of the Invention
The present_invention pertains to radiation-curable_water-soluble combinations_of_polyester resins with_high_mass fraction_of solids.
2. Description of the Related Art
From_EP-A 0_574 775 self-emulsifying polymerizable binders are_known which can be_made_by reacting pre-polymers containing (meth)acryloyl groups_(A) and unsaturated polyesters (B) which_are emulsifiable in water with_multifunctional_isocyanates._The preferred pre-polymers (A) containing_(meth)acryloyl groups are polyester (meth)acrylates which_are condensation products_of aromatic and/or aliphatic dicarboxylic acids (A1),_especially_those of malonic, succinic, glutaric, adipic,_sebacic,_hexahydrophthalic, terephtalic, maleic, fumaric, citraconic and_itaconic_acids_or their anhydrides, of polyols_(A2), especially glycol, 1,2- and