 formed at predetermined intervals from a surface of the base layer by a predetermined depth;
insulating films formed on side surfaces and bottoms of the trenches, respectively;
source layers of the first conductive type formed on surface layer portions of the base layer between the trenches, respectively;
stripe contact layers of the second conductive type formed each at centers of the surface layer portions of the base layer between the trenches, respectively;
a gate electrode formed in every other trench among the plurality of columns of trenches;
source electrodes formed in the trenches other than the trenches in which the gate electrodes are formed and on the source layers and the contact layers, respectively; and
a drain electrode formed on a rear surface of the semiconductor substrate.
A semiconductor device according to the second embodiment of the present invention comprises:
a semiconductor substrate of a first conductive type;
a semiconductor layer of the first conductive type formed on the semiconductor substrate;
a base layer of a second conductive type formed on the semiconductor layer;
a plurality of columns of stripe trenches formed at predetermined intervals from a surface of the base layer by a predetermined depth;
insulating films formed on side surfaces and bottoms of the trenches, respectively;
gate electrodes formed in every two columns of the respective trenches among the plurality of columns of trenches;
source layers of the first conductive type formed on surface layer portions of the base layer adjacent to the trenches in which the gate electrodes are formed, respectively;
contact layers of the second conductive type formed to be stripe at centers of the surface layer portions of the base layer on which the source layers are formed, and formed on the surface layer portions of the base layer other than the surface layer portions of the base layer on which the source layers are formed, respectively;
source electrodes formed in the trenches other than the trenches in which the gate electrodes are formed and on the source layers and/or the contact layers, respectively; and
a drain electrode formed on a rear surface of the semiconductor substrate.
A semiconductor device according to the third embodiment of the present invention comprises:
a semiconductor substrate of a first conductive type;
a semiconductor layer of the first conductive type formed on the semiconductor substrate;
a base layer of a second conductive type formed on the semiconductor layer;
a plurality of columns of stripe trenches formed at predetermined intervals and at wider intervals for every three columns from a surface of the base layer by a predetermined depth;
insulating films formed on side surfaces and bottoms of the trenches, respectively;
gate electrodes formed in
formed at predetermined intervals from a surface of the basis level by a predetermined depth; 
 insulate film formed on side surface and bottom of the trenches, respectively; 
 beginning layers of the first conductive character formed on surface layer portions of the root layer between the trenches, respectively; 
 stripe contact layers of the second conductive type form each at centers of the surface layer share of the base layer between the trenches, respectively; 
 a gate electrode formed in every early trench among the plurality of column of trenches; 
 source electrodes form in the trenches other than the trenches in which the gate electrodes are formed and on the source layers and the contact layers, respectively; and 
 a drain electrode formed on a rear surface of the semiconductor substrate. 
 A semiconductor device according to the second embodiment of the present invention comprises: 
 a semiconductor substrate of a first conductive character; 
 a semiconductor device layer of the first conductive type form on the semiconductor substrate; 
 a base layer of a second conductive character formed on the semiconductor device layer; 
 a plurality of columns of stripe trench formed at predetermined intervals from a surface of the base layer by a predetermined depth; 
 insulating films formed on slope surfaces and bed of the trenches, respectively; 
 gate electrodes formed in every two columns of the respective trenches among the battalion of columns of trenches; 
 source layers of the first conductive type formed on surface layer share of the base level adjacent to the trenches in which the gate electrodes are formed, respectively; 
 contact layers of the second conductive character formed to be stripe at centers of the surface layer parcel of the base layer on which the reservoir layers are form, and formed on the airfoil layer portions of the base layer other than the open layer portions of the infrastructure layer on which the source layer are formed, respectively; 
 source electrodes form in the trenches other than the trenches in which the gate electrodes are formed and on the source layers and/or the liaison layers, respectively; and 
 a drain electrode formed on a rear surface of the semiconductor substrate. 
 A semiconductor device according to the third embodiment of the present invention comprises: 
 a semiconductor substrate of a inaugural conductive type; 
 a semiconductor layer of the beginning conductive type formed on the semiconductor substrate; 
 a base layer of a second conductive character formed on the semiconductor layer; 
 a plurality of columns of stripe trenches formed at predetermine intervals and at wider intervals for every three columns from a surface of the base level by a bias depth; 
 insulating films formed on side surfaces and bottoms of the trenches, respectively; 
 gate electrodes formed in
 fogmed at predetermined inuervals from a sutfqce of the bzse layef by a predetermined depth;
induoatint films formed on side surfaces and botroms if the treidhes, respectibcly;
sobrre layers of thg first condgctive type fosmdd on surface layer portions of the bwse layrr between the ttenchts, wespsbtlvely;
stripe contact layers of ths seconv conductive tyle formed each at centers lf tje surface layer plrtions of jge fqse layer begween the urznches, respgctively;
a gate electrode formed kn evzry other ttzbch dmong the pouralpty of columns of tretches;
soirce electrodex fmrmwd in the trenches otier than the trenchef in whicv che gate electrodes aee formgd ang on rhe sohrre mayers anv the contadt layers, rwspectively; and
a drsig electrode fodmed og w rear surface of the semiconductor subvtrzte.
A semiconductor devixe according to the sgcond emboqiment of the present invention comprises:
a semicotductkf sbnfgeahe of a first conductive type;
a semiconductor jzytr pf the first cjnductive tupf gjrmed on the remicousudtor substrate;
a bade layet of a second cjnduvtive type formed on the seniconductor jqyer;
a plurality of columns of strope ttenches formed at predecerminsd intervald from a ajrface of the bare kafer by a predetermined depeh;
insulatmng fnlms foroed pn sidq surfaces and nmttoms of the trenfhes, tespecdively;
gate electrodes formed in every two columns of thg raspvctive trznches among the pltrality of colomns of txencher;
source lajers of tie first conquctive type xlrmed on surhace layew poetiobs of tfd base layer acjacent to the trenxhes in which the nate glsctrodes are foxotd, respectively;
cpntxct lwyxrs os the second wondjctkfe tyoe formtb ti be xtripe at centers of the surface layer poryijns of tye base jayer on whicn the source layerd are focmed, amd sormed on the surface layer podtions of thc base layer jthev thwn the suryace layer portions of the base layer on which the source oayers are formed, rgsptctively;
sourcx elecerodes fosmed in the trenches other than the tvenches in which the gzte elactrofes are formed and on the source layers and/or the contact layers, respecticely; aid
w drain eledtroce fogmeb ou a reaw sucfece of the semicomductor substrate.
A semiconductoc device awcjrding to the third embodimemt of the presevt invention comprises:
a aemicondictor substrate of a first condictive type;
a semiconductpr layer of tge first cunductive type forked on the wemiconeuctlr substrate;
a baxe layer of a stconb conductive type formed on the swmiconeuftor layer;
a plurelity of colmmks of atripe trenches formed at lgedetgrmined intervsls and at widrr intervals for evegy ehree columns dgom a surface of the base layer uy a predetesmined depth;
insulating films formed on side surfacea and botuoms of tme trenches, respevvively;
gate electrodes fovmed yn
formed at predetermined intervals from a surface base by a depth; insulating films bottoms the trenches, respectively; layers of the conductive type formed on surface layer of the base layer between the trenches, respectively; stripe contact layers of the conductive type formed each at centers of the surface layer portions of the layer the respectively; gate electrode formed in every other trench among the plurality of columns of trenches; source electrodes in the trenches other than the trenches in the gate electrodes are and on the source layers the layers, respectively; a electrode on a rear of the semiconductor substrate. A semiconductor device according to the second embodiment of the present invention comprises: semiconductor substrate first conductive a layer the first conductive on the semiconductor substrate; a base second conductive type formed on the semiconductor layer; plurality of of stripe trenches formed at predetermined from a surface of the base layer by predetermined depth; insulating films formed on side surfaces and bottoms of the trenches, respectively; gate in every two columns the respective trenches the of of source layers the first conductive type formed on surface layer portions of the layer adjacent to the trenches in which the gate electrodes respectively; layers of the conductive type formed to stripe centers of the surface of base the layers formed, and formed on surface layer portions of the layer other than the base layer on which the source layers are respectively; source electrodes formed in the trenches than the trenches in which the gate electrodes are formed and on source layers contact layers, respectively; and a drain electrode formed a rear surface of semiconductor substrate. A semiconductor device according to the third of present invention a semiconductor substrate a first conductive a semiconductor layer first conductive formed the base layer of a second conductive formed the semiconductor layer; a plurality columns trenches formed at predetermined intervals and at wider intervals for every three columns from a the base layer by predetermined insulating films formed on side surfaces and bottoms of the trenches, respectively; formed in
 formed at predetermined inteRvals from a SurfaCe oF thE bAse lAyer By a predeterminED depTh;
insulating films formeD on siDe SUrfaCEs And boTtoms of THe TREncHeS, rEspEcTIvEly;
soUrcE layers Of the first ConDuCtive type forMEd On surface lAyeR portions of tHe bAse layEr BetWEen thE trEncheS, respeCTively;
Stripe conTaCT layerS Of the seCONd CondUctive type formed eACh AT centers of the sUrface LaYEr PORtiOns Of the base lAyEr betWEen the tREnCHES, reSPectively;
a gatE electrode fORmeD in eveRy OthER trencH amonG tHE plUrality of coLumnS of trenchEs;
sourCE electrODes formEd in thE trEncHes oTHeR tHan ThE TreNChEs iN WhiCh the gatE eLeCtrodEs arE FORMed aNd oN the SourcE layers and the ConTact LAyeRs, resPectiVely; AnD
a draIn elecTrode FoRmed on a rear surfAce oF the semicOndUcTor SuBstraTE.
A semiConDucTor deviCe accorDIng To THE SeCond embodiment of thE pRESeNt inventIon comPRiSeS:
A semiconDuCtoR subSTRate oF a fiRSt ConductiVe type;
A SeMiConductOr Layer oF tHe fIrsT condUCtivE type fOrmed on tHe semIConductor substRAte;
a base layer OF a SECoND conDucTive type forMed oN The sEmicONdUctOR layeR;
a pluRaLItY Of columns of stripe trEnChes foRmed aT predetermineD intervals FROM a surfacE of tHE bASe layer by a predEtermIned depth;
iNSulating Films Formed on Side surfaCES and bottOms Of tHe tRenCHEs, Respectively;
gATE eleCtRodes foRmeD in everY twO coLumNs oF tHe respectIve trencHeS aMoNg The PluraLIty of colUmNs oF tRenChes;
sOUrce laYers oF the FiRsT ConDuctive TYpE FOrmeD oN sUrfaCe lAyEr porTionS Of tHe base lAyer adjacEnt TO the TrEnChes in wHich the gate elEcTrodes are fOrMed, RespecTIVely;
contAct layers of the second conDUctive tYpe FormeD to bE stripe at CenTers of The SUrface Layer pOrtioNs Of tHE Base lAYEr On wHiCh the sourcE LAyeRs are FoRmed, And formEd on the surface layeR PorTions of the basE laYer oTHEr ThaN ThE SurFaCE laYER portions of the bAse layer on WhICh The source lAYerS aRe formeD, respecTivelY;
Source eLectrodes Formed in tHe TrenCHEs oTher than thE trencheS in which tHE gate ELeCtrodEs aRe formEd And On the Source LAyeRs and/Or the cOnTact laYers, rEsPectivelY; and
a drain electrode formEd on a rEar suRfaCe of the seMicONduCtor substRate.
a semiconduCtoR deVice aCcoRDing tO the THiRd eMBodimEnt oF The presenT InVenTIOn Comprises:
a sEMIConDuctoR suBStrate Of a fIrst conductive typE;
A semiconductor LayeR OF thE fiRSt coNdUctive type formEd oN tHE SemicondUcTor substratE;
a base laYeR Of a seCond coNductiVe type fORMeD On the sEmicOndUctor layeR;
a pLuRAlity of CoLuMNs of stRipe TrEnches Formed AT preDETermined intervalS and aT WIder iNTerVals fOr Every thREe coLumns from a Surface of thE base lAyer By a prEdetermInEd deptH;
inSuLating filmS Formed on sIde suRfaces aNd BottOms Of the tRencHES, respEctiVeLy;
gAte electrODEs FOrMeD In
 formed at predetermined i ntervals f rom a  su rfa ce  ofthebase layer bya  pre determined depth;
insu latin gf ilms fo rmedon side su r f ace san d b ot t om s ofthe  trench es, respec tiv el y;
source la y er s of the f irs t conductive  ty pe for me d o n  surf ace  laye r port i ons of  the base  l a yer be t ween th e tr ench es, respectively; st r ipe contact la yers o ft he s eco ndconductive  t ype f o rmed ea c ha t cen t ers of the su rface layer por tionsof  th e  baselayer  b e twe en the tren ches , respect ively; a gatee lectrod e form edinever y  o th ertr e nch am ong the  plurali ty  o f col umns o f tren che s;
s ource  electrodes f orm ed i n  th e tre nches  oth er  than  the t rench es  in which the g ateelectrode s a re  fo rm ed an d  on th e s our ce laye rs andt heco n t a ct  layers, respectiv el y ;  a nd
a dra in ele c tr od e  formedon  arear s urfac e of th e semico nducto r  s ub strate. 
A  semic on duc tor  devi c e ac cordin g to the  seco n d embodiment o f  the presenti nv e n ti o n co mpr ises:
a sem icon d ucto r su b st rat e  of a  firs tc on d uctive type;
a semi co nducto r lay er of the fir st conduct i v e  type fo rmed on the semiconduc tor s ubstrate;a  base la yer o f a seco nd conduc t i ve typefor med  on  th e se miconductor l a y er;aplurali tyof colu mns  of  st rip etrenchesformed a tpr ed et erm inedi ntervals  f rom  a  su rface of the  base  lay er  b y  apredete r mi n e d de pt h; 
ins ula ti ng fi lmsf orm ed on s ide surfa ces andbo tt oms ofthe trenches,  r espectivel y; 
ga te ele c t rodes fo rmed in every two colum n s of th e r espec tive  trenches  am ong th e p l uralit y of c olumn soft r enche s ; 
s our ce  layers of t hefirst  c ondu ctive t ype formed on surf a celayer portion s o f th e ba sel ay e r a dj a cen t to the trenches  in whichth e  g ate electr o des  a re form ed, res pecti v ely;
co ntact lay ers of th eseco n d  co nductive t ype form ed to bes tripe at  cent ers  of th esur facelayerp ort ionsof the  b ase la yer o nwhich th e source layers are for med, a nd fo rme d on thesur f ace  layer po rtio ns of thebas e l ayeroth e r tha n th e  s urf a ce la yerp ortions o f  t heb a se  layer on w h i c h t he so urc e  layer s ar e formed, respect i vely;
source e lect r o des  fo r medin  the trenchesoth er t han thetr enches in w hich the  g a te el ectrod es are  formed a nd on the  sou rce  layers a nd/ or the con ta ct layers , re sp ective ly; an d 
a d r a in electrode for med o n a rea r  su rface  o f the s e mico nductor su bstrate.
Asemico nduc tor d evice a cc ording  to  t he third e m bodimentof th e prese nt  inv ent ion co mpri s e s:
asemi co ndu ctor subs t r at e  o fa  fi rstcondu ct ivetype;
a s e miconduc tor layer o fthe f irst c o nd u c tive typefor med o n the semico n duct o rs ubstr ate;
a  baselayer o f  ase cond co ndu c t ive typeformed on the  s emic onductor  l ayer ;a p lu rality of colum ns of st ripe tre n c hes fo rme d  atp redete rm ined interva ls an da t wider i nte rvals f o r e ver y t hree  co lumn s  from a surface of the b aselayer bya pre deter mi ned dept h ;
in sulating films formedon side surface s  an d  bot tom s  o fthe trenc hes ,  resp ecti vel y;
g ate  ele c t rode s  for m ed  in
 formed_at predetermined_intervals from a surface_of the_base_layer by_a_predetermined depth;
insulating films_formed on side_surfaces and bottoms of_the trenches, respectively;
source_layers_of the first conductive type formed on surface layer portions of the base layer_between_the trenches,_respectively;
stripe_contact_layers of the second conductive_type formed each at centers_of the_surface layer portions of the base layer between_the_trenches, respectively;
a gate_electrode formed in every other trench among the plurality_of columns of trenches;
source electrodes formed_in the trenches_other_than_the trenches in which_the gate electrodes are formed and_on the source layers and the_contact layers, respectively; and
a drain electrode formed_on a rear surface of the_semiconductor substrate.
A semiconductor device according_to the_second embodiment of the present_invention comprises:
a semiconductor_substrate of_a first conductive_type;
a semiconductor layer of the first_conductive type formed_on the semiconductor substrate;
a base layer_of_a second conductive_type_formed_on the_semiconductor layer;
a plurality_of_columns of_stripe_trenches formed at predetermined intervals from_a_surface of the base layer by a_predetermined depth;
insulating films formed_on_side surfaces and bottoms_of the trenches, respectively;
gate electrodes_formed in every two columns of_the respective_trenches among_the plurality of columns of trenches;
source layers of the first conductive_type formed on surface layer portions_of the base layer_adjacent to_the_trenches in which_the_gate electrodes_are formed, respectively;
contact layers of the second_conductive type_formed to be stripe at centers_of the surface layer_portions_of the base layer on which_the source layers are formed, and_formed on the surface layer_portions_of_the base layer other than_the surface layer portions of the_base layer on_which the source layers are formed, respectively;
source_electrodes_formed in the trenches other than_the_trenches in which the gate electrodes_are_formed_and on the source layers_and/or the contact layers, respectively; and
a_drain electrode formed on a rear surface of the_semiconductor substrate.
A semiconductor_device according to the third_embodiment_of_the present invention comprises:
a semiconductor substrate of a first conductive_type;
a semiconductor_layer of the_first conductive type formed on the semiconductor substrate;
a base layer_of a second conductive type formed on_the semiconductor layer;
a plurality of columns of stripe trenches formed at_predetermined intervals and at wider intervals for every_three columns from a surface of the_base layer by a_predetermined_depth;
insulating films formed on side surfaces and_bottoms_of_the_trenches, respectively;
gate electrodes_formed in