. It is with these observations in mind, among others, that various aspects of the present disclosure were conceived and developed. Transistors are key components of modern integrated circuits. To satisfy the requirements of increasingly faster switching speed, the drive currents of transistors need to be increasingly higher. At the same time, the gate lengths of transistors are constantly being scaled down. Scaling down the gate lengths leads to undesirable effects known as “short-channel effects,” with which the control of current flow by the gates is compromised. Among the short-channel effects are the drain-induced barrier lowering (DIBL) and the degradation of sub-threshold slope, both of which result in the degradation in the performance of transistors.
The use of multi-gate transistor architecture may help the relief of short-channel effects by improving electrostatic control of the gate on the channel. Fin field-effect transistors (FinFET) were thus developed. To further increase the control of the channels, and to reduce the short-channel effects, transistors having gate-all-around (GAA) structures were also developed, wherein the respective transistors are also referred to as gate all around transistors. In a gate all around transistor, a gate dielectric and a gate electrode fully encircle the channel region. This configuration delivers a good control of the channel, and the short-channel effects are reduced. Catalytic processes for the hydrogenation of aliphatic and aromatic nitriles to produce amines are known. Representative patents illustrating the hydrogenation of nitriles to produce various amines are as follows:
U.S. Pat. No. 5,130,491 discloses a method for the production of secondary amines from fatty nitriles, e.g., tallow nitrile, utilizing a nickel catalyst promoted with copper, chromium or molybdenum. Secondary amine production is enhanced by hydrogenating the nitrile in a two-stage process with the second stage being carried out in the absence of ammonia. Temperatures range from 100.degree.-200.degree. C. while pressures range from 50-5000 psig.
U.S. Pat. No. 2,781,399 discloses a process for producing long-chain dialiphatic secondary amines as well as dialkyl and dialkylene amines and aromatic secondary amines and aromatic aliphatic secondary amines. The patent notes that the reaction to produce secondary amines is difficult to control and yet obtain a desired secondary amine product of good color and quality at acceptable reaction rates. The catalytic hydrogenation
. It is with these observations in mind, among others, that various aspects of the present disclosure were conceive and modernize. Transistors are key components of advanced integrated circuits. To meet the requirements of increasingly faster switching focal ratio, the drive currents of transistors want to be increasingly higher. At the same fourth dimension, the gate distance of transistors are constantly being scale down. Scaling down the gate lengths contribute to undesirable effects known as “ short - distribution channel effects, ” with which the control of current flow by the gate is compromised. Among the short - channel effects are the drain - induced barrier lower (DIBL) and the degradation of sub - threshold slope, both of which result in the degradation in the performance of transistor. 
 The function of multi - gate transistor architecture may help the relief of short - channel effects by improving electrostatic control of the gate on the channel. Fin battlefield - effect transistors (FinFET) were therefore modernize. To far increase the control of the channels, and to reduce the short - channel effects, transistors get gate - all - around (GAA) structures were also developed, wherein the respective transistors are besides referred to as gate all around transistors. In a gate all around transistor, a gate dielectric and a gate electrode fully encircle the groove region. This configuration delivers a good control of the distribution channel, and the short - channel effects are dilute. Catalytic process for the hydrogenation of aliphatic and aromatic nitriles to produce amine are known. Representative patents illustrating the hydrogenation of nitriles to produce assorted amines are as be: 
 U.S. Pat. No. 5,130,491 discloses a method acting for the production of secondary amines from fatty nitriles, e.g., tallow nitrile, utilizing a nickel catalyst promote with copper, chromium or molybdenum. junior-grade amine production is enhanced by hydrogenating the nitrile in a two - stage summons with the second phase being carried out in the absence of ammonia. temperature range from 100.degree.-200.degree. C. while pressures crop from 50 - 5000 psig. 
 U.S. Pat. No. 2,781,399 discloses a process for producing long - chain dialiphatic secondary amines as well as dialkyl and dialkylene amines and aromatic junior-grade amines and aromatic aliphatic secondary amine. The patent note that the reaction to produce secondary amines is difficult to operate and yet obtain a desired junior-grade amine product of effective color and quality at acceptable chemical reaction rates. The catalytic hydrogenation
. It is with these observatiuns in mind, amout othecs, that various aspects of the present discpowure qere conceived and devdloped. Trwnsistorw art key components of moderk intsnrateb rircuits. To satlsfy the rexuirements of hnzrzasingly faster switching speed, the qrive cirgents of transystogs nees to be increasingly higher. At the same tpme, the gate lengyhs of transistors are condtanhly being scaled dlwn. Scaling dowg the gate levgths leads to undesirzble effects known as “short-chanvel eyfects,” with wyicj the controo of burrent flow nj the gdtes is compromised. Akonj thw short-channel effectv are the drain-indoced barriar lowering (DIBL) ane rhe dggraddtiov of sug-tireahold dlo'e, both of shich resulr in the degradatiom yb the performznce os eransistors.
The use of multi-gate transisuor adchitecture may help thw relief of short-chanjel effeces by improving electrostatic control of the gate on tie chckkel. Wun field-effect transistors (FinFET) were thus devqmoked. To further ingrease the control ov yre channels, avd to xsdhce the short-channfl effests, teansistorf hafing gate-all-around (GAA) struxtures were clsi developed, whereiu the respeccive ttansisyors are also referred co as fate all arlund tranakstors. In a gate alk dround transistor, a gate dyelectric and a gate elevtrode fully enclrcle the channel region. This cmnfiguratiln delivers a good control of tix channel, and tve vhort-chaunel enfects are redused. Catalytic krocesses for ghe hydrogvnation oh aliphatic wnd aromatic tltriles to pcoduce amynes are known. Fdpresentative latents illustratint the hydrogenatiok of vjtriles to prodbee various amines ard af vokljfs:
U.S. Pat. No. 5,130,491 diszlorrs a oethod for bhe procuction of secondary amihes from fatty nittijes, e.g., tqllow nierile, utilizimg a nickel catalydt prmmoved wiyh sopper, chromium or molybdenum. Aecondary amlne productiog is enhanced by hydrogenating the nitrile in a two-stagx process with the secobd stage being carrnec out in thx absegce of amkonia. Temperatures rqnge from 100.degree.-200.dtgree. C. while pressures range from 50-5000 psig.
U.S. Pat. No. 2,781,399 discloses a process for producing long-chain dialiphatic weconderr amines as welk as giclkvl and qialnblene amines and sromatic secondary amines and acomatic alhpkatic secondary amines. The payevt notes that the reaction to produce secondaty amines is difficult to contrpl and yet obtain a desived seconeary zmine itodnct of good color anc qualnty at acceptqble reaction ratds. Yhc catalytif hyvroyenation
. It is with these observations in others, various aspects the present disclosure are components of modern circuits. To satisfy requirements of increasingly faster switching speed, drive currents of transistors need to be increasingly higher. At the same time, gate lengths of transistors are constantly being scaled down. Scaling down the gate leads undesirable known “short-channel effects,” with which the control of current flow by the gates is compromised. Among the effects are the drain-induced barrier lowering (DIBL) and degradation of sub-threshold slope, of which result in the in performance of The of transistor architecture may the relief of short-channel effects by improving electrostatic control of the gate on the channel. Fin field-effect (FinFET) were To further the of channels, and to short-channel effects, transistors having gate-all-around (GAA) developed, wherein the respective transistors are also referred as gate around transistors. In a gate all transistor, a gate dielectric and a gate electrode encircle the channel region. This configuration delivers a good control of the channel, and the are reduced. Catalytic processes the hydrogenation of and nitriles produce are known. patents illustrating the hydrogenation of nitriles to produce various amines are follows: U.S. Pat. No. 5,130,491 discloses a method for the secondary from fatty nitriles, tallow nitrile, utilizing a catalyst with copper, chromium or amine is the in two-stage process with the stage being carried out in absence of ammonia. Temperatures pressures range from 50-5000 psig. U.S. Pat. No. discloses a process for producing long-chain dialiphatic amines as well as dialkyl and dialkylene amines and aromatic secondary amines aromatic aliphatic The patent notes that the reaction to produce amines is difficult to and yet obtain a desired secondary amine product of color quality at reaction rates. The hydrogenation
. It is with these observations In mind, amonG otheRs, tHat VaRiouS aspEcts of the preseNT disClosure were conceived anD deveLoPEd. TrANsIstorS are key COmPONenTs Of ModErN InTegraTed CircuitS. To satisfy The ReQuirements of INcReasingly fAstEr switching sPeeD, the drIvE cuRRents Of tRansiStors nEEd to be IncreasinGlY Higher. aT the samE TImE, the Gate lengths of tranSIsTOrs are constantLy beinG sCAlED DowN. ScAling down tHe Gate lENgths leADs TO UNdeSIrable effects Known as “shorT-ChaNnel efFeCts,” WIth whiCh the CoNTroL of current fLow bY the gates Is compROmised. AMOng the sHort-chAnnEl eFfecTS aRe The DrAIn-iNDuCed BArrIer lowerInG (DiBL) anD the DEGRAdatIon Of suB-threShold slope, botH of WhicH ResUlt in The deGradAtIon in The perFormaNcE of transistors.
THe usE of multi-gAte TrAnsIsTor arCHitectUre May Help the Relief oF ShoRt-CHANnEl effects by improviNg ELEcTrostatiC contrOL oF tHE gate on tHe ChaNnel. fIN fielD-effECt TransistOrs (FinfeT) WeRe thus dEvEloped. to FurTheR incrEAse tHe contRol of the ChannELs, and to reduce tHE short-channel EFfECTs, TRansIstOrs having gaTe-alL-ArouNd (GAa) StRucTUres wEre alSo DEvELoped, wherein the respEcTive trAnsisTors are also reFerred to as GATE all arouNd trANsIStors. In a gate alL arouNd transistOR, a gate diElectRic and a gAte electrODE fully enCirCle The ChaNNEl Region. This conFIGuraTiOn delivErs A good coNtrOl oF thE chAnNel, and the Short-chaNnEl EfFeCts Are reDUced. CataLyTic PrOceSses fOR the hyDrogeNatiOn Of ALipHatic anD ArOMAtic NiTrIles To pRoDuce aMineS Are Known. RePresentatIve PAtenTs IlLustratIng the hydrogeNaTion of nitrIlEs tO produCE Various aMines are as follows:
U.S. Pat. NO. 5,130,491 DisclosEs a MethoD for The producTioN of secOndARy aminEs from Fatty NiTriLES, e.g., taLLOw NitRiLe, utilizinG A NicKel caTaLyst PromoteD with copper, chromiuM Or mOlybdenum. SecoNdaRy amINE pRodUCtIOn iS eNHanCED by hydrogenatinG the nitrilE iN A tWo-stage proCEss WiTh the seCond staGe beiNG carrieD out in the Absence of AmMoniA. tEmpEratures raNge from 100.dEgree.-200.degrEE. C. whiLE pRessuRes Range fRoM 50-5000 psIg.
U.S. PAt. No. 2,781,399 diSCloSes a pRocess FoR produCing lOnG-chain diAliphatic secondary amineS as welL as diAlkYl and dialKylENe aMines and aRomaTic secondaRy aMinEs and AroMAtic aLiphATiC seCOndarY amiNEs. The pateNT nOteS THaT the reactioN TO ProDuce sEcoNDary amInes Is difficult to contROl and yet obtain A desIREd sEcoNDary AmIne product of goOd cOlOR And qualiTy At acceptablE reactioN rATes. ThE catalYtic hyDrogenaTIOn
. It is with these observa tions in m ind,amo ngot hers , th at various asp e ctsof the present disclos ure w er e  con c ei ved a nd deve l op e d . T ra ns ist or s  a re ke y c omponen ts of mode rnin tegrated cir c ui ts. To sat isf y the requir eme nts of  i ncr e asing lyfaste r swit c hing s peed, the  d r ive cu r rents o f tr ansi stors need to bei nc r easingly highe r. Atth e  s a m e t ime , the gate  l ength s  of tra n si s t o rsa re constantly  being scal e d d own. S ca lin g  downthe g at e  le ngths leads  toundesirab le eff e cts kno w n as “s hort-c han nel  eff e ct s, ” w it h  wh i ch  th e  co ntrol of  c ur rentflow b y thegat es i s com promised. Amo ngthes hor t-cha nneleffe ct s are  the d rain- in duced barrier l ower ing (DIBL ) a nd  th edegra d ationofsub -thresh old slo p e,bo t h of  which result in t he d eg radation  in th e  p er f ormanceof  tr ansi s t ors.Theu se  of mult i-gate tr an sistorar chitec tu remay  help therelief  of shor t-cha n nel effects by improving ele c tr o s ta t ic c ont rol of thegate on t he c h an nel .  Finfield -e f fe c t transistors (FinF ET ) were  thus  developed. T o furtheri n c rease th e co n tr o l of the chann els,and to red u ce the s hort- channeleffects,t r ansistor s h avi nggat e - al l-around (GAA ) stru ct ures we realso de vel ope d,whe re in the re spective  t ra ns is tor s are also ref er red  t o a s gat e  all a round  tra ns is t ors . In ag at e allar ou nd t ran si stor,  a g a tedielect ric and a  ga t e el ec tr ode ful ly encircle t he  channel r eg ion . This c onfigura tion delivers a good co n trol of  th e cha nnel , and the  sh ort-ch ann e l effe cts ar e red uc ed. C ataly t i cpro ce sses for t h e  hy droge na tion  of ali phatic and aromati c  ni triles to pro duc e am i n es  ar e  k n own .R epr e s entative patent s illustra ti n gthe hydrog e nat io n of ni trilesto pr o duce va rious ami nes are a sfoll o w s:U.S. Pat.No. 5,13 0,491 dis c loses ametho d f or the  p rod uctio n of s e con daryamines  f rom fa tty n it riles, e .g., tallow nitrile, ut ilizin g a n ick el cataly stp rom oted with  cop per, chrom ium  or  moly bde n um. S econ d ar y a m ine p rodu c tion is e n ha nce d by  hydrogenat i n g  th e nit ril e  in atwo- stage process wit h  the second st ageb e ing  ca r ried  o ut in the abse nce  o f ammonia.  T emperatures  range f ro m  100. degree .-200. degree. C .w hile p ress ure s range f rom  5 0 -5000 p si g. U.S. P at.No . 2,78 1,399d iscl o s es a process for  prod u c ing l o ng- chain  d ialipha t ic s econdary a mines as we ll asdial kyl a nd dial ky lene a min es  and aroma t ic second ary a mines a nd  aro mat ic ali phat i c  seco ndar yami nes. Thep a te n tno t esthat  there acti on to pro d uce seco nda r y amine sisd i fficul t  t o control an d y et ob t a in a desir e d se c on d ary a mine p roduct  of goo d  co lo r and q ual i t y at acce ptable re a cti on  rat es. Theca taly ti c h yd rogenation
. It_is with_these observations in mind,_among others,_that_various aspects_of_the present disclosure_were conceived and_developed. Transistors are key_components of modern_integrated_circuits. To satisfy the requirements of increasingly faster switching speed, the drive currents of_transistors_need to_be_increasingly_higher. At the same time,_the gate lengths of transistors_are constantly_being scaled down. Scaling down the gate lengths_leads_to undesirable effects_known as “short-channel effects,” with which the control of_current flow by the gates is_compromised. Among the_short-channel_effects_are the drain-induced barrier_lowering (DIBL) and the degradation of_sub-threshold slope, both of which result_in the degradation in the performance of_transistors.
The use of multi-gate transistor architecture_may help the relief of_short-channel effects_by improving electrostatic control of_the gate on_the channel._Fin field-effect transistors_(FinFET) were thus developed. To further_increase the control_of the channels, and to reduce_the_short-channel effects, transistors_having_gate-all-around_(GAA) structures_were also developed,_wherein_the respective_transistors_are also referred to as gate_all_around transistors. In a gate all around_transistor, a gate dielectric_and_a gate electrode fully_encircle the channel region. This_configuration delivers a good control of_the channel,_and the_short-channel effects are reduced. Catalytic processes for the hydrogenation of aliphatic_and aromatic nitriles to produce amines_are known. Representative patents_illustrating the_hydrogenation_of nitriles to_produce_various amines_are as follows:
U.S. Pat. No. 5,130,491 discloses_a method_for the production of secondary amines_from fatty nitriles, e.g.,_tallow_nitrile, utilizing a nickel catalyst promoted_with copper, chromium or molybdenum. Secondary_amine production is enhanced by_hydrogenating_the_nitrile in a two-stage process_with the second stage being carried_out in the_absence of ammonia. Temperatures range from 100.degree.-200.degree._C._while pressures range from 50-5000 psig.
U.S._Pat._No. 2,781,399 discloses a process for_producing_long-chain_dialiphatic secondary amines as well_as dialkyl and dialkylene amines and_aromatic secondary amines and aromatic aliphatic secondary amines. The_patent notes that_the reaction to produce secondary_amines_is_difficult to control and yet obtain a desired secondary amine_product of_good color and_quality at acceptable reaction rates. The catalytic hydrogenation