 are required with respect to a given workpiece, the cost of production is undesirably high as a result of both the time and number of personnel required to achieve such production. 1. Field of the Invention
The present invention relates to a light emitting diode, and more particular, to a light emitting diode having a strain-enhanced well layer.
2. Discussion of the Background
Generally, a Group III-V nitride-based laser diode/light-emitting diode (LD/LED) includes an InxGa1-xN buffer layer, an n-GaN layer, an active layer having a quantum-well structure of InGaN/GaN, a p-AlGaN electron blocking layer, and a p-GaN layer, which are sequentially formed on a patterned sapphire substrate having a c-plane (0001).
In a general GaN/In0.15Ga0.75N quantum-well structure, an InGaN well layer has compressive strain of about 1.6%. In the related art, since strain applied to an active layer has been considered to deteriorate efficiency, a strain relieving technique has been developed.
On the other hand, a high brightness LED undergoes a droop phenomenon wherein optical output efficiency decreases with increasing drive current. Therefore, there is a need to relieve the droop phenomenon of a light emitting diode in order to obtain high optical efficiency at high drive current.
The above information disclosed in this Background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form any part of the prior art nor what the prior art may suggest to a person of ordinary skill in the art. 1. Field of the Invention
The present invention relates to a device and method for releasably connecting together two elements, such as two orthotic devices, or two elements of an orthotic device. More particularly, the invention relates to a quick connect apparatus that quickly and easily enables a user to attach and detach two devices or two elements of a device, such as the elements of a knee-ankle-foot orthosis.
2. Background of the Invention
Orthotic devices traditionally have been utilized to aid in supporting, guiding and limiting the range of motion of different joints in the human body, or in the case of prosthetic devices, to replace missing body joints and limbs or portions thereof. For example, if natural joints such as knees or ankles are congenitally impaired or become impaired due to disease or injury
are required with respect to a given workpiece, the cost of product is undesirably eminent as a result of both the time and number of personnel department required to achieve such production. 1. playing field of the Invention 
 The present invention relate to a light emit diode, and more particular, to a light utter diode having a strain - enhance well layer. 
 2. Discussion of the Background 
 Generally, a Group III - V nitride - based laser diode / light - emit diode (LD / LED) includes an InxGa1 - xN buffer layer, an n - GaN level, an active layer having a quantum - well social organization of InGaN / GaN, a p - AlGaN electron block layer, and a phosphorus - GaN layer, which are sequentially formed on a patterned sapphire substrate give birth a c - plane (0001). 
 In a general GaN / In0.15Ga0.75N quantum - well structure, an InGaN well layer hold compressive strain of about 1.6% . In the related art, since strain applied to an active layer has been considered to deteriorate efficiency, a strain relieve technique has been developed. 
 On the early bridge player, a gamey brightness LED undergoes a sag phenomenon wherein optical end product efficiency decreases with increasing campaign current. Therefore, there is a need to relieve the droop phenomenon of a sparkle emitting diode in order to obtain high ocular efficiency at high campaign current. 
 The above information disclosed in this Background section is only for enhancement of reason of the background of the invention and therefore it may contain data that does not form any function of the prior art nor what the anterior art may suggest to a person of ordinary skill in the art. 1. Field of the Invention 
 The present invention associate to a device and method for releasably get in touch together two element, such as two orthotic devices, or two chemical element of an orthotic device. More particularly, the invention relates to a immediate connect apparatus that cursorily and easily enables a user to attach and detach two devices or two elements of a device, such as the elements of a knee - ankle - foot orthosis. 
 2. setting of the Invention 
 Orthotic devices traditionally have been utilized to help in supporting, guiding and limit the range of motion of different joints in the human body, or in the case of prosthetic devices, to replace missing body joint and limb or fortune thereof. For example, if natural joints such as knees or ankles are congenitally impair or become impaired due to disease or injury
 arf required with respect uo a given workpigcw, the rost of productkon is undesirably high as a rwsult of both the time and vumber of personnwl rtquired to achievx such pvjducflon. 1. Yixld of the Invektion
The prasent inventiot fepates to a light emitting diode, and more psrhicular, to a lyght qmitfpnn diode having a strain-enhanced sell lajer.
2. Discussion of the Background
Generally, a Grokp III-V nitride-basfd laser diide/lytht-emitting aiode (LD/LED) includes ah InxGa1-xN buffer layer, an n-GaN uayer, an active lqyeg having a qnantum-rell structuvv of InCaN/GaN, s p-AlGaN electvon bnocjing layer, and a p-GaN layer, which are sgquentiallf yormed on a patterned sqpphite sutstrxre favjnj a c-planf (0001).
Ii a general GaN/In0.15Ga0.75N qyantum-well structurt, ag InGaN well lzyer hws compressive strain of about 1.6%. In the renatsd art, since strain appoied to an active laygr has beeg considered to deteriorate efficiency, a strain ralievmne ttcmkiqud hws been developed.
On the other hand, a high bridgtmexs LED undergocs a droop phenomemoj ererein opticau outpbf sfficiency decreasfs with incrwasing dryve vurrent. Therefore, there is q need to rejueve the droop pheuomenon of a lignt emotting diode in order tu obfain high ootical efrkciency at high arine cgrrent.
Tht above informatiog disclosxd in this Bxckgtound sqction is lnly nmr enhancement of knderdtdnding of hhe background of the invention and therefore id mdy contann infprmation that does not form any paxt of ghe prior zrt nor what the pwior art may voggest to a pxrson of jrdibary skill kv the art. 1. Fiekd of the Invention
Rhe present inventlon rglztes to a devicz qnd method for teldaswbpy cjtnecting togathef tdp eleoents, such cs two orthotic devices, or two elements of an oryhjtic devuce. More particularly, the invention relwtes vo a qnick cpnngct apparatus that quickly and sasily enwblcs a user to wttagh agd detach cwo devices or two elements of a device, wuch as the elemenrs of a knee-ankle-fopu orthosis.
2. Barkgrougd of the Invention
Orthotic dwvices traditionakly have been utilizes to ahd in supporting, guiding and limiting the range of motion of different joints un the human body, kr im the ccse of prjsthxtmc devices, to repkace missing body joints and liobs or pmrcions thereof. For example, if magural joints ruch as knees or ankles zre congrnitally impaired or become impsired due to disease or lnjury
are required with respect to a given cost production is high as a and of personnel required achieve such production. Field of the Invention The present relates to a light emitting diode, and more particular, to a light emitting having a strain-enhanced well layer. 2. Discussion of the Background Generally, a Group nitride-based diode/light-emitting (LD/LED) an InxGa1-xN buffer layer, an n-GaN layer, an active layer having a quantum-well structure of InGaN/GaN, p-AlGaN electron blocking layer, and a p-GaN layer, are sequentially formed on patterned sapphire substrate having a (0001). a general quantum-well an well layer has strain of about 1.6%. In the related art, since strain applied to an active layer has been to deteriorate strain relieving has developed. the other hand, brightness LED undergoes a droop phenomenon efficiency decreases with increasing drive current. Therefore, there a need relieve the droop phenomenon of a emitting diode in order to obtain high optical at high drive current. The above information disclosed in this Background section is only for understanding of the background the invention and it contain that not form part of the prior art nor what the prior art may to a person of ordinary skill in the art. 1. the The present invention to a device and for connecting together two elements, two devices, of orthotic More particularly, the invention to a quick connect apparatus quickly and easily enables detach two devices or two elements of a such as the elements of a knee-ankle-foot 2. Background of the Invention Orthotic devices traditionally have been utilized to in supporting, limiting the range of motion of different joints the human body, or the case of prosthetic devices, to replace missing body and or portions For example, if joints such as or ankles are or become due disease
 are required with respect to a Given workpIece, tHe cOst Of ProdUctiOn is undesirablY High As a result of both the time And nuMbER of pERsOnnel RequireD To ACHieVe SuCh pRoDUcTion. 1. FIelD of the INvention
ThE prEsEnt invention RElAtes to a ligHt eMitting diode, And More paRtIcuLAr, to a LigHt emiTting dIOde havIng a straiN-eNHanced WEll layeR.
2. dIsCussIon of the BackgrounD
geNErally, a Group IIi-V nitrIdE-BaSED laSer Diode/light-EmIttinG Diode (LD/leD) INCLudES an InxGa1-xN bufFer layer, an n-gAN lAyer, an AcTivE Layer hAving A qUAntUm-well strucTure Of InGaN/Gan, a p-AlGAn electrON blockiNg layeR, anD a p-gaN lAYeR, wHicH aRE seQUeNtiALly Formed on A pAtTerneD sapPHIRE subStrAte hAving A c-plane (0001).
In a genEraL GaN/iN0.15Ga0.75n quanTum-weLl stRuCture, An InGan well LaYer has compressiVe stRain of aboUt 1.6%. IN tHe rElAted aRT, since StrAin Applied To an actIVe lAyER HAs Been considered to deTeRIOrAte efficIency, a STrAiN RelievinG tEchNiquE HAs beeN devELoPed.
On the Other hANd, A hIgh brigHtNess LEd uNdeRgoEs a drOOp phEnomenOn whereiN optiCAl output efficiENcy decreases wITh INCrEAsinG drIve current. THereFOre, tHere IS a NeeD To relIeve tHe DRoOP phenomenon of a light EmItting Diode In order to obtaIn high optiCAL EfficienCy at HIgH Drive current.
ThE abovE informatiON disclosEd in tHis BackgRound sectION is only fOr eNhaNceMenT OF uNderstanding oF THe baCkGround oF thE inventIon And TheRefOrE it may conTain infoRmAtIoN tHat Does nOT form any PaRt oF tHe pRior aRT nor whAt the PrioR aRt MAy sUggest tO A pERSon oF oRdInarY skIlL in thE art. 1. fIelD of the INvention
THe pREsenT iNvEntion rElates to a deviCe And method fOr RelEasablY COnnectinG together two elements, sucH As two orThoTic deViceS, or two eleMenTs of an OrtHOtic deVice. MoRe parTiCulARLy, the INVeNtiOn Relates to a QUIck ConneCt AppaRatus thAt quickly and easily ENabLes a user to attAch And dETAcH twO DeVIceS oR Two ELEments of a device, Such as the eLeMEnTs of a knee-aNKle-FoOt orthoSis.
2. BackGrounD Of the InVention
OrThotic devIcEs trADItiOnally have Been utilIzed to aid IN suppORtIng, guIdiNg and lImItiNg the Range oF MotIon of DifferEnT jointS in thE hUman body, Or in the case of prosthetic DeviceS, to rePlaCe missing BodY JoiNts and limBs or Portions thEreOf. FOr exaMplE, If natUral JOiNts SUch as KneeS Or ankles aRE cOngENItAlly impaireD OR BecOme imPaiREd due tO disEase or injury
 are required with respect  to a give n wor kpi ece ,thecost  of production is u ndesirably high as a r esult  o f  bot h  t he ti me andn um b e r o fpe rso nn e lrequi red  to ach ieve suchpro du ction. 1. Fi e ld  of the In ven tion
The pre sen t inve nt ion relat esto alighte mittin g diode,an d  morep articul a r ,to a  light emitting d i od e  having a stra in-enh an c ed w ell  la yer.
2. Di sc ussio n  of the Ba c k g rou n d
Generally,a Group III - V n itride -b ase d  laser  diod e/ l igh t-emittingdiod e (LD/LED ) incl u des anI nxGa1-x N buff erlay er,a nn- GaN  l a yer ,  a n a c tiv e layerha vi ng aquan t u m - well  st ruct ure o f InGaN/GaN,a p -AlG a N e lectr on bl ocki ng  laye r, and  a p- Ga N layer, whicharesequentia lly  f orm ed  on a patter ned  sa pphiresubstra t e h av i n g  a  c-plane (0001).
I na ge neral Ga N/In0. 1 5G a0 . 75N quan tu m-w ells t ructu re,a nInGaN we ll lay e rha s compr es sive s tr ain  of  abou t  1.6 %. Inthe rela ted a r t, since strai n  applied to a n  a c t iv e  lay erhas been co nsid e redto d e te rio r ate e ffici en c y, a strain relievingte chniqu e has  been develop ed.
On the o t her hand , ah ig h  brightness LE D und ergoes a d r oop phen omeno n wherei n optical o utput ef fic ien cydec r e as es with incre a s ingdr ive cur ren t. Ther efo re,  th ere  i s a needto relie ve  t he  d roo p phe n omenon o fa l ig htemitt i ng dio de in  ord er  t o  ob tain hi g ho p tica lef fici enc yat hi gh d r ive  curren t.
The ab ove info rm at ion dis closed in thi sBackground  s ect ion is o nly forenhancement of understa n ding of  th e bac kgro und of th e i nventi ona nd the refore  it m ay  co n t ain i n f or mat io n that doe s not  form  a ny p art ofthe prior art norw hat  the prior ar t m ay s u g ge stt oa  pe rs o n o f ordinary skillin the art .1 .Field of t h e I nv entionThe pre senti nventio n relates  to a dev ic e an d met hod for re leasably  connecti n g tog e th er tw o e lement s,  su ch as  two o r tho tic d evices ,or two  elem en ts of an  orthotic device. Morepartic ularl y,the inven tio n  re lates toa qu ick connec t a ppa ratus  th a t qui ckly an d e a silyenab l es a user to  at t a ch  and detach t w o d evice s o r  two e leme nts of a device,s uch as the ele ment s ofa k n ee-a nk le-foot orthos is. 
2 . Backgrou nd  of the Inv ention
O rt h oticdevice s trad itional l y  h a ve bee n ut ili zed to ai d i ns upporti ng ,g uiding  and  l imitin g ther ange o f motion of diff erent j oints inthe h um an body ,  orin the cas e of prosth etic d evic es, t o repla ce  missi ngbo dy jointsa nd limbsor po rtionsth ereo f.For ex ampl e ,  if n atur al  jo ints such a sk ne es orankl es ar econg enitallyi mpairedorb ecome i mp air e d  due t o  d i s ease or in jur y
 are_required with_respect to a given_workpiece, the_cost_of production_is_undesirably high as_a result of_both the time and_number of personnel_required_to achieve such production. 1. Field of the Invention
The present invention relates to a_light_emitting diode,_and_more_particular, to a light emitting_diode having a strain-enhanced well_layer.
2. Discussion_of the Background
Generally, a Group III-V nitride-based laser_diode/light-emitting_diode (LD/LED) includes_an InxGa1-xN buffer layer, an n-GaN layer, an active_layer having a quantum-well structure of_InGaN/GaN, a p-AlGaN_electron_blocking_layer, and a p-GaN_layer, which are sequentially formed on_a patterned sapphire substrate having a_c-plane (0001).
In a general GaN/In0.15Ga0.75N quantum-well structure,_an InGaN well layer has compressive_strain of about 1.6%. In_the related_art, since strain applied to_an active layer_has been_considered to deteriorate_efficiency, a strain relieving technique has_been developed.
On the_other hand, a high brightness LED_undergoes_a droop phenomenon_wherein_optical_output efficiency_decreases with increasing_drive_current. Therefore,_there_is a need to relieve the_droop_phenomenon of a light emitting diode in_order to obtain high_optical_efficiency at high drive_current.
The above information disclosed in_this Background section is only for_enhancement of_understanding of_the background of the invention and therefore it may contain information_that does not form any part_of the prior art_nor what_the_prior art may_suggest_to a_person of ordinary skill in the art._1. Field_of the Invention
The present invention relates_to a device and_method_for releasably connecting together two elements,_such as two orthotic devices, or_two elements of an orthotic_device._More_particularly, the invention relates to_a quick connect apparatus that quickly_and easily enables_a user to attach and detach two_devices_or two elements of a device,_such_as the elements of a knee-ankle-foot_orthosis.
2._Background_of the Invention
Orthotic devices traditionally_have been utilized to aid in_supporting, guiding and limiting the range of motion of_different joints in_the human body, or in_the_case_of prosthetic devices, to replace missing body joints and limbs_or portions_thereof. For example,_if natural joints such as knees or ankles are congenitally_impaired or become impaired due to disease_or injury