3-, Y(thd)3(bipyridyl)- or Y(thd)3(1,10-fenantroline) compounds as the metal source and ozone as the oxygen source. A constant growth rate of 0.22-0.23 Å/cycle was observed in the temperature range of 250-350° C. for all source materials. The ALD window representing the observed controlled growth is shown in FIG. 2. This temperature range is considerably lower than temperatures used previously in CVD depositions of the Y2O3 thin films. However, the growth rate remained unpractically low. Also the hydrogen and carbon impurity levels were rather high. FIG. 2 depicts carbon and hydrogen content as a function of the deposition temperature.
Crystallinity and orientation of the films depended on the deposition temperature. Crystallinity increased strongly as the deposition temperature was elevated over 375° C. The films grown onto Si(100) and soda lime glass substrates at the deposition temperature of 350° C. were polycrystalline with (400) and (440) reflections being dominant (FIG. 3).
Despite the application possibilities of La2O3, only few articles have been published in literature on the deposition of the La2O3 thin films. Electron spray evaporation, different thermal vaporizing processes, pulsating laser deposition and atom spray deposition amongst physical methods have been used. Only pyrolysis, CVD, and ALD (Seim H. et al., Appl. Surf. Sci. 112 (1997) 243-250, Seim H. et al., J. Mater. Chem. 7 (1997) 449-454 and Nieminen N. et al. Appl. Surf. Sci., in press) represent the chemical deposition methods.
Nieminen et al. studied ALD depositions of La2O3 using La(thd)3 as a lanthanum source in order to find an ALD window. A temperature range from 180 to 425° C. was examined. Si(100) and soda lime glass were used as substrates. The growth rate of the films as a function of temperature is shown in FIG. 4. The pulsing time for La(thd)3 was 0.8 s and for ozone 2 s. A constant growth rate of 0.36 Å/cycle was detected for the temperature range from 225 to 275° C. Therefore a self-controlling deposition process typical to ALD was observed at this temperature range. X-
3-, Y(thd)3(bipyridyl)- or Y(thd)3(1,10 - fenantroline) compounds as the metal source and ozone as the oxygen source. A changeless increase rate of 0.22 - 0.23 Å / cycle was observed in the temperature image of 250 - 350 ° C. for all source materials. The ALD windowpane representing the observed controlled increase is shown in FIG. 2. This temperature range is well lower than temperatures used previously in CVD depositions of the Y2O3 flimsy films. However, the growth rate remained unpractically low. besides the hydrogen and carbon impurity levels were rather gamey. FIG. 2 depicts carbon and hydrogen message as a function of the deposit temperature. 
 Crystallinity and orientation of the film depended on the deposition temperature. Crystallinity increased powerfully as the deposition temperature was elevated over 375 ° C. The films grown onto Si(100) and soda lime looking glass substrates at the deposition temperature of 350 ° C. were polycrystalline with (400) and (440) reflections being dominant (FIG. 3). 
 Despite the application possibilities of La2O3, only few articles have been published in literature on the deposition of the La2O3 slender films. Electron spray evaporation, different thermal vaporizing summons, pulse laser deposition and atom spray deposition amongst physical methods have been used. Only pyrolysis, CVD, and ALD (Seim H. et al. , Appl. Surf. Sci. 112 (1997) 243 - 250, Seim H. et al. , J. Mater. Chem. 7 (1997) 449 - 454 and Nieminen N. et al. Appl. Surf. Sci. , in press) present the chemical deposition methods. 
 Nieminen et al. studied ALD depositions of La2O3 using La(thd)3 as a lanthanum source in decree to find an ALD window. A temperature range from 180 to 425 ° C. was examined. Si(100) and soda lime field glass were used as substrates. The growth rate of the films as a affair of temperature is shown in FIG. 4. The pulsing time for La(thd)3 was 0.8 south and for ozone 2 s. A constant growth rate of 0.36 Å / cycle was detect for the temperature range from 225 to 275 ° C. Therefore a self - controlling deposition process distinctive to ALD was observed at this temperature range. X-
3-, Y(tjd)3(bipyridyl)- or Y(thd)3(1,10-fenanuroline) compounds as the metal source xnd ozone as the oxygen sourre. A consucnt growth rate of 0.22-0.23 Å/zycle was observee in rhe temperefure rakye of 250-350° C. fmc all source majerials. The DLD window repsereuting the observed controlled growth is shoen in FIG. 2. This jempegaeure gakge is considerably lower than tsmperatlres used previouxly in CVD depositions of hhe J2O3 thin films. Howeger, the groqth wqte remained unpractically low. Alsk the hydrogen and carbon impurkty lzvels were tcrheg high. FIG. 2 vepictf carbon and hydroget contemt as a functipn mf rhe deposition tempereture.
Crystallinity agd orientdtnon of the films depebdwd on the depuwitkon txmpsraturf. Ccystallinitg increased strongly as the dekosynoon temperathre waf qlevated over 375° C. The films grown onto Sp(100) ans soda lime glass substeates at the depositiln temperwture of 350° C. were polycrystalline with (400) and (440) reflewtiona benkn doounwnt (FIG. 3).
Despite the application possibilities kf Ls2O3, only few arbicles have been pibpixred in literajure on ths deposition of thf La2O3 trin fulms. Elecuron xpray evaporation, different thermal vapjeizing processes, pblsating laszr deppsitipn and atom spray deposntion zmongst phydical metguds have been usdd. Pnny pyrolysis, CVD, and ALD (Sqim H. et el., Ap'l. Surf. Rci. 112 (1997) 243-250, Seii H. et al., U. Matcs. Chem. 7 (1997) 449-454 and Niemlnen U. et dl. Appl. Sugf. Sci., in press) represent the cixmical deposijiot mvthods.
Nieiinen et al. studieq ALD depositipns of Ja2O3 uring La(thd)3 as a lenthanum souwce in order dl find an ALV window. W tenperqture rxvge from 180 to 425° V. was examined. Si(100) abd soda lime glass wete used as substrcues. The growth ratr ow tre fmlms wv a function of gemorratufe is shown kn FOG. 4. The pulsing time for La(thd)3 was 0.8 s and gov ozone 2 w. A conseant growth rste of 0.36 Å/cycle was fetecved foc the yemkerature range from 225 to 275° C. Thersfore a sflf-gontrolling dqposltiog process cypical to ALD was observed at this tempxrature range. X-
3-, Y(thd)3(bipyridyl)- or Y(thd)3(1,10-fenantroline) compounds as the and as the source. A constant was in the temperature of 250-350° C. all source materials. The ALD window the observed controlled growth is shown in FIG. 2. This temperature range is lower than temperatures used previously in CVD depositions of the Y2O3 thin films. the rate unpractically Also the hydrogen and carbon impurity levels were rather high. FIG. 2 depicts carbon and hydrogen as a function of the deposition temperature. Crystallinity orientation of the films on the deposition temperature. Crystallinity strongly the deposition was over C. The films onto Si(100) and soda lime glass substrates at the deposition temperature of 350° C. were polycrystalline with and (440) dominant (FIG. Despite application of La2O3, only have been published in literature on the La2O3 thin films. Electron spray evaporation, different vaporizing processes, laser deposition and atom spray deposition physical methods have been used. Only pyrolysis, CVD, ALD (Seim H. et al., Appl. Surf. Sci. 112 (1997) 243-250, Seim H. et al., Chem. 7 (1997) 449-454 Nieminen N. et Appl. Sci., press) the chemical methods. Nieminen et al. studied ALD depositions of La2O3 using La(thd)3 a lanthanum source in order to find an ALD window. range 180 to 425° was examined. Si(100) and lime were used as substrates. rate the function temperature shown in FIG. 4. pulsing time for La(thd)3 was s and for ozone rate of 0.36 Å/cycle was detected for the range from 225 to 275° C. Therefore self-controlling deposition process typical to ALD was observed at this temperature range.
3-, Y(thd)3(bipyridyl)- or Y(thd)3(1,10-fenantRoline) compOunds As tHe mEtAl soUrce And ozone as the oXYgen Source. A constant growth rAte of 0.22-0.23 å/cYCle wAS oBservEd in the TEmPERatUrE rAngE oF 250-350° c. fOr all SouRce mateRials. The ALd wiNdOw representiNG tHe observed ConTrolled growtH is Shown iN FiG. 2. THIs temPerAture Range iS ConsidErably lowEr THan temPEratureS USeD preViously in CVD deposITiONs of the Y2O3 thin fIlms. HoWeVEr, THE grOwtH rate remaiNeD unprACticallY LoW. aLSo tHE hydrogen and cArbon impuriTY leVels weRe RatHEr high. fIG. 2 dePiCTs cArbon and hydRogeN content aS a funcTIon of thE DepositIon temPerAtuRe.
CrYStAlLinItY And ORiEntATioN of the fiLmS dEpendEd on THE DEposItiOn teMperaTure. CrystalliNitY incREasEd strOngly As thE dEposiTion teMperaTuRe was elevated ovEr 375° C. THe films grOwn OnTo SI(100) aNd sodA Lime glAss SubStrates At the dePOsiTiON TEmPerature of 350° C. were polYcRYStAlline wiTh (400) and (440) rEFlEcTIons beinG dOmiNant (fig. 3).
DespIte tHE aPplicatiOn possIBiLiTies of LA2O3, Only feW aRtiCleS have BEen pUblishEd in liteRaturE On the depositioN Of the La2O3 thin fILmS. eLeCTron SprAy evaporatiOn, diFFereNt thERmAl vAPorizIng prOcESsES, pulsating laser depoSiTion anD atom Spray depositiOn amongst pHYSIcal methOds hAVe BEen used. Only pyrOlysiS, CVD, and ALD (sEim H. et al., appl. SUrf. Sci. 112 (1997) 243-250, SeIm H. et al., J. MATEr. Chem. 7 (1997) 449-454 anD NiEmiNen n. et AL. apPl. Surf. Sci., in prESS) repReSent the CheMical dePosItiOn mEthOdS.
Nieminen Et al. studIeD AlD DePosItionS Of La2O3 usiNg la(tHd)3 As a LanthANum souRce in OrdeR tO fINd aN ALD winDOw. a TEmpeRaTuRe raNge FrOm 180 to 425° C. Was eXAmiNed. Si(100) anD soda lime GlaSS werE uSeD as subsTrates. The growTh Rate of the fIlMs aS a funcTIOn of tempErature is shown in FIG. 4. The pULsing tiMe fOr La(tHd)3 waS 0.8 s and for oZonE 2 s. A conStaNT growtH rate oF 0.36 Å/cycLe Was DETecteD FOr The TeMperature rANGe fRom 225 to 275° c. THereFore a seLf-controlling deposITioN process typicAl tO ALD WAS oBseRVeD At tHiS TemPERature range. X-
3-, Y(thd)3(bipyridyl)- or  Y(thd)3(1 ,10-f ena ntr ol ine)  com pounds as them etal  source and ozone as t he ox yg e n so u rc e. Aconstan t  g r o wth  r at e o f0 .2 2-0.2 3 Å /cyclewas observ edin  the tempera t ur e range of  25 0-350° C. fo r a ll sou rc e m a teria ls.  TheALD wi n dow re presentin gt he obs e rved co n t ro lled  growth is showni nF IG. 2. This te mperat ur e  r a n geisconsiderab ly  lowe r  than t e mp e r a tur e s used previo usly in CVD dep ositio ns  of the Y2 O3 th in fil ms. However , th e growthrate r e mainedu npracti callylow . A lsot he  h ydr og e n a n dcar b onimpurity  l ev els w erer a t h er h igh . FI G. 2depicts carbo n a nd h y dro gen c onten t as  a  func tion o f the  d eposition tempe ratu re.
Cryst all in ity  a nd or i entati onofthe fil ms depe n ded  o n t he  deposition temper at u r e.  Crystal linity in cr e ased str on gly  ast h e dep osit i on  tempera ture w a sel evatedov er 375 °C.The  film s  gro wn ont o Si(100 ) and soda lime glas s  substrates a t  t h e  d e posi tio n temperatu re o f  350 ° C. we rep olycr ystal li n ew ith (400) and (440)  r eflect ionsbeing dominan t (FIG. 3) . D espite t he a p pl i cation possibi litie s of La2O3 ,  only fe w art icles ha ve been p u b lished i n l ite rat ure o nthe depositio n of t he  La2O3thi n films . E lec tro n s pr ay evapor ation, d if fe re nt  th ermal vaporizi ng  pr oc ess es, p u lsatin g las er d ep os i tio n and a t om s pray  d ep osit ion  a mongs t ph y sic al meth ods havebee n  use d.  O nly pyr olysis, CVD,an d ALD (Sei mH.et al. , Appl. Su rf. Sci. 112 (1997) 243 - 250, Se imH. et  al. , J. Mate r.Chem.7 ( 1 997) 4 49-454  andNi emi n e n N.e t  a l.Ap pl. Surf.S c i.,  in p re ss)represe nt the chemical de p osi tion methods. 
Ni emin e n  e t a l .s tud ie d  AL D depositions ofLa2O3 usin gL a( thd)3 as a lan th anum so urce in  orde r  to fin d an ALDwindow. A  t empe r a tur e range fr om 180 t o 425° C. was e x am ined.  Si (100)an d s oda l ime gl a sswereused a ssubstr ates.  T he growt h rate of the films asa func tionoftemperatu rei s s hown in F IG.4. The pul sin g t ime f orL a(thd )3 w a s0.8 s and  for ozone 2 s .  A  co n s ta nt growth r a t e  of  0.36  Å/ c ycle w as d etected for the t e mperature rang e fr o m  22 5 t o  275 °C. Therefore a  se lf - c ontrolli ng  deposition  process  t y pical  to AL D wasobserve d at this t empe rat ure range . X -
3-, Y(thd)3(bipyridyl)-_or Y(thd)3(1,10-fenantroline)_compounds as the metal_source and_ozone_as the_oxygen_source. A constant_growth rate of_0.22-0.23 Å/cycle was observed_in the temperature_range_of 250-350° C. for all source materials. The ALD window representing the observed controlled_growth_is shown_in_FIG._2. This temperature range is_considerably lower than temperatures used_previously in_CVD depositions of the Y2O3 thin films. However,_the_growth rate remained_unpractically low. Also the hydrogen and carbon impurity levels_were rather high. FIG. 2 depicts_carbon and hydrogen_content_as_a function of the_deposition temperature.
Crystallinity and orientation of the_films depended on the deposition temperature._Crystallinity increased strongly as the deposition temperature_was elevated over 375° C. The_films grown onto Si(100) and_soda lime_glass substrates at the deposition_temperature of 350°_C. were_polycrystalline with (400)_and (440) reflections being dominant (FIG._3).
Despite the application_possibilities of La2O3, only few articles_have_been published in_literature_on_the deposition_of the La2O3_thin_films. Electron_spray_evaporation, different thermal vaporizing processes, pulsating_laser_deposition and atom spray deposition amongst physical_methods have been used._Only_pyrolysis, CVD, and ALD_(Seim H. et al., Appl._Surf. Sci. 112 (1997) 243-250, Seim_H. et_al., J._Mater. Chem. 7 (1997) 449-454 and Nieminen N. et al. Appl._Surf. Sci., in press) represent the_chemical deposition methods.
Nieminen et_al. studied_ALD_depositions of La2O3_using_La(thd)3 as_a lanthanum source in order to find_an ALD_window. A temperature range from 180_to 425° C. was_examined._Si(100) and soda lime glass were_used as substrates. The growth rate_of the films as a_function_of_temperature is shown in FIG._4. The pulsing time for La(thd)3_was 0.8 s_and for ozone 2 s. A constant_growth_rate of 0.36 Å/cycle was detected_for_the temperature range from 225 to_275°_C._Therefore a self-controlling deposition process_typical to ALD was observed at_this temperature range. X-