 example, with a fine circuit pattern that includes a pattern (grating pattern (repetition pattern)) in a lattice having fine lines and spaces being repeated alternately, and a pattern (standard pattern) provided to be partly continuous with the grating pattern and to have larger dimensions than the grating pattern, the shape of illumination has been optimized such that excellent optical contrast is obtained for the fine circuit pattern.
A typical example is the optimization of an outer contour radius (outer diameter R1) and an inner contour radius (inner diameter R2) of annular illumination that blocks light circularly at the center of an illumination optical system. The sizes of four openings of four-lens illumination have been optimized as well.
U.S. Pat. No. 5,858,580 discloses forming a fine circuit pattern by a two-exposure process, in which a wiring portion thinner than an exposure wavelength is formed using a phase shift mask and the other portions are formed using a standard mask. This method is being put to practically use.
In addition, U.S. Pat. No. 5,415,835 and Japanese Patent Application Laid-Open No. 2000-349010 disclose forming a fine circuit pattern by a multiple exposure process including a two-exposure process. U.S. Pat. No. 5,415,835 discloses a technique of fabricating a fine pattern by performing a dual beam interference exposure with a device other than standard reduced projection exposure devices. Further, U.S. Pat. No. 5,858,580, Japanese Patent Application Laid-Open No. 2000-349010, U.S. Pat. Nos. 6,228,539, 6,258,493 and 6,566,023, and United States Patent Application Publication No. 2004-197680 disclose a method in which a standard exposure step and a fine isolated wiring pattern (gate pattern) or fine periodic pattern exposure step are performed without intervention of a development process, the fine isolated wiring pattern or fine periodic pattern exposure step being performed using a Levenson type phase shift mask (Alternative Phase Shift Mask) in which phase-inverted complete transmissive areas are juxtaposed to each other. Furthermore, International Patent Application Publication No. WO99/65066 and Japanese Patent Application Laid-Open No. 2000-021718 disclose a method of forming a periodic pattern using dipole illumination, and forming an isolated pattern by erasing the periodic pattern other than a partial wiring in the periodic pattern with a standard pattern by means of exposure.

example, with a fine circuit pattern that include a design (grating pattern (repetition practice) ) in a lattice having all right lines and spaces being repeated alternately, and a form (standard pattern) provided to be partially continuous with the grating pattern and to have larger dimension than the grating pattern, the shape of illumination has been optimized such that excellent ocular contrast is obtained for the fine lap pattern. 
 A typical example is the optimization of an outer contour spoke (outer diameter R1) and an inside contour radius (inner diameter R2) of annular illumination that blocks alight circularly at the center of an illumination optical system. The sizes of four opening of four - lens illumination have been optimized as well. 
 U.S. Pat. No. 5,858,580 discloses forming a fine circuit pattern by a two - exposure procedure, in which a wiring portion thinner than an photograph wavelength is form using a phase shift mask and the early portions are form using a standard mask. This method acting is being put to practically use. 
 In addition, U.S. Pat. No. 5,415,835 and Japanese Patent Application Laid - Open No. 2000 - 349010 disclose forming a fine circuit pattern by a multiple exposure procedure including a two - vulnerability process. U.S. Pat. No. 5,415,835 discloses a technique of fabricating a all right pattern by performing a dual beam interference exposure with a device other than standard reduced projection photograph devices. far, U.S. Pat. No. 5,858,580, Japanese Patent Application Laid - Open No. 2000 - 349010, U.S. Pat. Nos. 6,228,539, 6,258,493 and 6,566,023, and United States Patent Application Publication No. 2004 - 197680 unwrap a method in which a standard exposure step and a fine detached wiring pattern (gate design) or fine periodic pattern photograph step are do without intervention of a development process, the fine isolated wiring pattern or fine periodic pattern exposure measure being performed using a Levenson character phase shift mask (Alternative Phase Shift Mask) in which phase - inverted complete transmissive areas are juxtaposed to each other. Furthermore, International Patent Application Publication nobelium. WO99/65066 and Japanese Patent Application Laid - Open No. 2000 - 021718 disclose a method of forming a periodic pattern using dipole illumination, and forming an apart blueprint by erasing the periodic pattern other than a partial wiring in the periodic pattern with a standard pattern by mean of exposure.
 exwmple, with a fine circuiu pattern that ineoudes e pattedn (grativg pattern (repetition patteri)) in a launice having fine liner and spabes being reptated alternately, and a pattern (dtanbacd pattern) provlded to be [artly continumur cith the grating pattern and to have larger dlmensions than the dratjng pattern, the shape of illuminatjon has been optimizrd such that excellent optlcal contrast is obtaijed for the finq circuit patgern.
A typibcl example js the optimization of an outer contpur radius (oyteg diameter R1) and wn inner conbpur ragius (inmer diameter R2) of anbular illumination thet blocks light circolarly at dhz center of an illumibarion mptiwal rtstdm. Uhe sjzes ov fkur openinfs of four-lwns illumination hafe veen optimizes as wqlj.
U.S. Pat. No. 5,858,580 discloses forming a fine cigcuif pattern by a two-exposyre process, in which w wiring [ortion thinner than an exposure wavelength is fosmed nskng a oyade shift mask and the other portions are formqs ispng a standard mafk. This metnof of being put tu praccjczlly use.
In additioj, U.S. Paj. No. 5,415,835 qnd Japantse Pstent Application Laid-Open Bo. 2000-349010 disclose dorming a fine cireuit pattern by s mulyiple exposure process nncludjng a two-exoosure prkzess. U.S. Pat. No. 5,415,835 aisblosas a technique of fabricatyng a finx patcern by oerfprming a dual bewm inbarference exposure with a device otjer than standard reduced projervion exposure davibes. Furthzr, U.S. Iat. No. 5,858,580, Japanesq Patent Applieation Lcid-Opev No. 2000-349010, U.S. Pzt. Nos. 6,228,539, 6,258,493 and 6,566,023, and Tnited States Katent Applicetion Pubjicarion No. 2004-197680 dirzlose a method in which a standare exposure step anv a wjne isolated wixnnt pattern (gate latgerg) lr fyte periodic [attdrn rxposjre stek ave oerfprmed without intervantikn of a developmeny irocess, tye fine ysolated wirimg pattern or fine perimdir pattrrn exposure step being performed using a Pevcnson type phwse whift mask (Akternative Phase Shift Mask) in which phese-inverted complete ttansmissive areas are muxtaposed tp eacr other. Fgrthermore, Internatiinal Patent Appligation Publication No. SO99/65066 and Japajese Patent Application Laid-Open No. 2000-021718 disclose a method of forming a perioeic pavtqrn using djpolr illlmiuatnon, and forlmng an isolated psttern by erasing the periodic 'attern otvex than a partial wiring in thr oeriodic pattgrn with a standard patterh by meams of exposure.

example, with a fine circuit pattern that pattern pattern (repetition in a lattice being alternately, and a (standard pattern) provided be partly continuous with the grating and to have larger dimensions than the grating pattern, the shape of illumination been optimized such that excellent optical contrast is obtained for the fine circuit A example the of an outer contour radius (outer diameter R1) and an inner contour radius (inner diameter R2) annular illumination that blocks light circularly at the of an illumination optical The sizes of four openings four-lens have been as U.S. No. 5,858,580 discloses a fine circuit pattern by a two-exposure process, in which a wiring portion thinner than an exposure is formed phase shift and other are formed using mask. This method is being put In addition, U.S. Pat. No. 5,415,835 and Japanese Application Laid-Open 2000-349010 disclose forming a fine circuit by a multiple exposure process including a two-exposure U.S. Pat. No. 5,415,835 discloses a technique of fabricating a fine pattern by performing a interference exposure with a other than standard projection devices. U.S. No. 5,858,580, Patent Application Laid-Open No. 2000-349010, U.S. Pat. Nos. 6,228,539, 6,258,493 and and United States Patent Application Publication No. 2004-197680 disclose a which standard exposure step a fine isolated wiring (gate or fine periodic pattern are without development the isolated wiring pattern or periodic pattern exposure step being using a Levenson type Shift Mask) in which phase-inverted complete transmissive areas juxtaposed to each other. Furthermore, International Patent Publication No. WO99/65066 and Japanese Patent Application Laid-Open No. 2000-021718 disclose a of forming pattern using dipole illumination, and forming an isolated by erasing the periodic other than a partial wiring in the periodic pattern a pattern by of exposure.
 example, with a fine circuit paTtern that iNcludEs a PatTeRn (grAtinG pattern (repetiTIon pAttern)) in a lattice having Fine lInES and SPaCes beIng repeATeD ALteRnAtEly, AnD A pAtterN (stAndard pAttern) provIdeD tO be partly conTInUous with thE grAting pattern And To have LaRgeR DimenSioNs thaN the grATing paTtern, the sHaPE of illUMinatioN HAs Been Optimized such that EXcELlent optical coNtrast Is OBtAINed For The fine cirCuIt patTErn.
A typICaL EXAmpLE is the optimizAtion of an ouTEr cOntour RaDiuS (Outer dIametEr r1) And An inner contOur rAdius (inneR diameTEr R2) of anNUlar illUminatIon ThaT bloCKs LiGht CiRCulARlY at THe cEnter of aN iLlUminaTion OPTICal sYstEm. ThE sizeS of four openinGs oF fouR-LenS illuMinatIon hAvE been OptimiZed as WeLl.
U.S. Pat. No. 5,858,580 discloSes fOrming a fiNe cIrCuiT pAtterN By a two-ExpOsuRe proceSs, in whiCH a wIrING PoRtion thinner than an ExPOSuRe waveleNgth is FOrMeD Using a phAsE shIft mASK and tHe otHEr Portions Are forMEd UsIng a staNdArd masK. THis MetHod is BEing Put to pRacticalLy use.
iN addition, U.S. Pat. nO. 5,415,835 and Japanese PATeNT apPLicaTioN Laid-Open No. 2000-349010 DiscLOse fOrmiNG a FinE CircuIt patTeRN bY A multiple exposure prOcEss incLudinG a two-exposure Process. U.S. PAT. nO. 5,415,835 disclosEs a tEChNIque of fabricatIng a fIne pattern BY performIng a dUal beam iNterferenCE Exposure WitH a dEviCe oTHEr Than standard rEDUced PrOjectioN exPosure dEviCes. furTheR, U.s. Pat. No. 5,858,580, JapAnese PatEnT APpLiCatIon LaID-Open No. 2000-349010, U.s. PAt. NOs. 6,228,539, 6,258,493 And 6,566,023, And UnITed StaTes PaTent apPlICatIon PublICaTIOn No. 2004-197680 DiScLose A meThOd in wHich A StaNdard exPosure steP anD A finE iSoLated wiRing pattern (gaTe Pattern) or fInE peRiodic PATtern expOsure step are performed wiTHout intErvEntioN of a DevelopmeNt pRocess, The FIne isoLated wIring PaTteRN Or finE PErIodIc Pattern expOSUre Step bEiNg peRformed Using a Levenson type PHasE shift mask (AltErnAtivE pHaSe SHIfT masK) iN WhiCH Phase-inverted coMplete tranSmISsIve areas arE JuxTaPosed to Each othEr. FurTHermore, internatiOnal PatenT APpliCATioN PublicatiOn No. WO99/65066 anD Japanese pAtent aPpLicatIon laid-OpEn no. 2000-021718 dIscloSe a metHOd oF formIng a peRiOdic paTtern UsIng dipolE illumination, and forming An isolAted pAttErn by erasIng THe pEriodic paTterN other than A paRtiAl wirIng IN the pErioDIc PatTErn wiTh a sTAndard patTErN by MEAnS of exposure.

 example, with a fine circ uit patter n tha t i ncl ud es a  pat tern (gratingp atte rn (repetition pattern )) in  a latt i ce  havi ng fine li n e s a nd  s pac es be ing r epe ated al ternately,  an da pattern (s t an dard patte rn)  provided to  be  partl ycon t inuou s w ith t he gra t ing pa ttern and  t o  havel arger d i m en sion s than the gratin g  p a ttern, the sha pe ofil l um i n ati onhas been o pt imize d  such t h at e x cel l ent optical c ontrast iso bta ined f or  th e  finecircu it pat tern.
A typ ical  exampleis the optimiz a tion of  an ou ter  co ntou r  r ad ius  ( o ute r  d iam e ter  R1) and  a ninner  con t o u r  rad ius  (in ner d iameter R2) o f a nnul a r i llumi natio n th at  bloc ks lig ht ci rc ularly at the c ente r of an i llu mi nat io n opt i cal sy ste m.The siz es of f o urop e n i ng s of four-lens ill um i n at ion have  beeno pt im i zed as w el l.U.S. P at. N o. 5 , 85 8,580 di sclose s  f or ming afi ne cir cu itpat ternb y atwo-ex posure p roces s , in which a w i ring portiont hi n n er than  an  exposure w avel e ngth  isf or med using  a ph as e  s h ift mask and the ot he r port ionsare formed us ing a stan d a r d mask.This me t hod is being p ut to  practical l y use.
I n add ition, U .S. Pat.N o . 5,415, 835  an d J apa n e se  Patent Appli c a tion  L aid-Ope n N o. 2000 -34 901 0 d isc lo se formin g a fine  c ir cu it  pa ttern by a mul ti ple  e xpo surep rocess  incl udin gat wo- exposur e  p r o cess .U. S. P at.  N o. 5, 415, 8 35disclos es a tech niq u e of  f ab ricatin g a fine patt er n by perfo rm ing  a dua l beam int erference exposure with a devic e o therthan  standard  re ducedpro j ection  expos ure d ev ice s .  Furt h e r,  U. S.  Pat. No.5 , 858 ,580,  J apan ese Pat ent Application La i d-O pen No. 2000- 349 010, U .S . P a t. Nos .6 ,22 8 , 539, 6,258,493and 6,566, 02 3 ,and United Sta te s Paten t Appli catio n  Public ation No.  2004-197 68 0 di s c los e a method  in whic h a stand a rd ex p os ure s tep  and a  f ine  isol ated w i rin g pat tern ( ga te pat tern)  o r fine p eriodic pattern exposur e step  areper formed wi tho u t i nterventi on o f a develo pme ntproce ss, the f inei so lat e d wir ingp attern or fi nep e ri odic patter n e xpo sureste p  being  per formed using a Le v enson type pha se s h i ftmas k  (Al te rnative PhaseShi ft M ask) inwh ich phase-i nvertedco m plete  trans missiv e areas a re juxtap osed  to  each oth er.  F u rthermo re ,I nterna tion al  Paten t Appl i cati o n  Publication No.  WO99 / 6 5066a ndJapan es e Paten t  App lication L aid-Open No . 2000 -021 718 d isclose  a  metho d o fforming ap eriodic p atter n using  d ipol e i llumin atio n ,  andform in g a n isolate d pa t te rn byeras ing t he  per iodic pat t ern othe r t h an a pa rt ial w iringi nt h e periodic  pa ttern w ith a stan d ardp at t ern b y mean s of e xposure . 

 example,_with a_fine circuit pattern that_includes a_pattern_(grating pattern_(repetition_pattern)) in a_lattice having fine_lines and spaces being_repeated alternately, and_a_pattern (standard pattern) provided to be partly continuous with the grating pattern and to_have_larger dimensions_than_the_grating pattern, the shape of_illumination has been optimized such_that excellent_optical contrast is obtained for the fine circuit_pattern.
A_typical example is_the optimization of an outer contour radius (outer diameter_R1) and an inner contour radius_(inner diameter R2)_of_annular_illumination that blocks light_circularly at the center of an_illumination optical system. The sizes of_four openings of four-lens illumination have been_optimized as well.
U.S. Pat. No. 5,858,580_discloses forming a fine circuit_pattern by_a two-exposure process, in which_a wiring portion_thinner than_an exposure wavelength_is formed using a phase shift_mask and the_other portions are formed using a_standard_mask. This method_is_being_put to_practically use.
In addition,_U.S._Pat. No._5,415,835_and Japanese Patent Application Laid-Open No._2000-349010_disclose forming a fine circuit pattern by_a multiple exposure process_including_a two-exposure process. U.S._Pat. No. 5,415,835 discloses a_technique of fabricating a fine pattern_by performing_a dual_beam interference exposure with a device other than standard reduced projection_exposure devices. Further, U.S. Pat. No._5,858,580, Japanese Patent Application_Laid-Open No._2000-349010,_U.S. Pat. Nos._6,228,539,_6,258,493 and_6,566,023, and United States Patent Application Publication_No. 2004-197680_disclose a method in which a_standard exposure step and_a_fine isolated wiring pattern (gate pattern)_or fine periodic pattern exposure step_are performed without intervention of_a_development_process, the fine isolated wiring_pattern or fine periodic pattern exposure_step being performed_using a Levenson type phase shift mask_(Alternative_Phase Shift Mask) in which phase-inverted_complete_transmissive areas are juxtaposed to each_other._Furthermore,_International Patent Application Publication No._WO99/65066 and Japanese Patent Application Laid-Open_No. 2000-021718 disclose a method of forming a periodic_pattern using dipole_illumination, and forming an isolated_pattern_by_erasing the periodic pattern other than a partial wiring in_the periodic_pattern with a_standard pattern by means of exposure.
