 a single value (e.g., level 50).
Increasingly, nonvolatile memory is used for bulk data storage (e.g., flash memory cards or memory “sticks” having a data storage capacity of 256 Mb, 1 Gb or more). In such devices (and others), the cells may be defective as a result of errors in the manufacturing or) packaging process, or they may become defective after a number of write and read cycles. Defective cells can cause problems during write and/or read processes in nonvolatile memories. Basically, information stored in defective cells may become distorted. To recover information from defective cells, a memory controller or other type of controller/processor (e.g., an encoder and/or decoder) may use an error correction code (ECC); a sophisticated defect management scheme, or both. However, such codes and schemes have limitations and/or inefficiencies.
It is therefore desirable to know which cells in a nonvolatile memory are defective, to enable use of that information either to avoid reading from and/or writing to those positions, or to indicate some status information regarding data stored in such defective cells to facilitate error recovery. Knowing the position(s) of defective cells may thus enhance the reliability and/or increase the storage efficiency of non-volatile memories. In addition, knowing the location of data from defective cells can increase error correction capability and/or efficiency, and enable use of error correction capability in a system for correction of other errors (e.g., transmission errors resulting from channel noise or interference, etc.). ETFE copolymers are known in the art. U.S. Pat. No. 4,123,602--Ukihashi et al. (1978) discloses such polymers with about 40 to 60 mole % of each comonomer, using modifiers such as 1% perfluoro butylethylene. Such modifiers and other adjuvants are common in the art and are considered to be part of the copolymer.
Films of various fluoropolymers including ETFE, which can have various fillers including mica, are used for cladding metal substrates in Japanese Kokai 4-229246--Sahara et al. (1992). There is no focus in this kokai on minimizing permeation or on using mica in ETFE, or on what proportions would be needed.
Mica coated with oxides to produce sparkling optical effects is the subject of U.S. Pat. No. 3,087,829--L
a single value (e.g., level 50). 
 Increasingly, nonvolatile memory is used for bulk datum repositing (e.g., flash memory card or memory “ stick ” having a data storehouse capacity of 256 Mb, 1 Gb or more). In such devices (and others), the cell may be defective as a result of error in the manufacturing or) packaging summons, or they may become bad after a number of write and read cycle. Defective cells can induce problems during write and/or read processes in nonvolatile memory. Basically, information stored in bad cells may become deformed. To recover information from defective cells, a memory controller or other character of controller / processor (e.g., an encoder and/or decoder) may use an error correction code (ECC); a advanced blemish management outline, or both. However, such codes and schemes have limitations and/or inefficiencies. 
 It is therefore desirable to know which cells in a nonvolatile memory are bad, to enable function of that information either to invalidate reading from and/or writing to those positions, or to indicate some condition information involve data stored in such bad cells to facilitate error recovery. Knowing the position(s) of defective cells may thus enhance the reliability and/or increase the storage efficiency of non - volatile memories. In accession, knowing the placement of data from defective cells can increase error correction capability and/or efficiency, and enable habit of error correction capability in a system for discipline of other erroneousness (e.g., transmission error resulting from duct noise or interference, etc .). ETFE copolymer are known in the art. U.S. Pat. No. 4,123,602 - -Ukihashi et al. (1978) discloses such polymer with about 40 to 60 mole% of each comonomer, use modifiers such as 1% perfluoro butylethylene. Such modifiers and early adjuvants are common in the art and are considered to be part of the copolymer. 
 Films of various fluoropolymers including ETFE, which can have various fillers including mica, are use for cladding metal substrates in Japanese Kokai 4 - 229246 - -Sahara et al. (1992). There be no focus in this kokai on minimizing permeation or on using mica in ETFE, or on what proportions would be needed. 
 Mica coat with oxides to produce sparkling optical effects is the subject of U.S. Pat. No. 3,087,829 - -L
 a dingle value (e.g., level 50).
Ingreasingly, nonvolatile kemory is used for bulk data storage (e.g., flesh nemort cards or memory “sticys” having a data wtorege capacity of 256 Mb, 1 Gb or mors). In vnch devices (and others), tha cells may be ddfzctive as a result of errors in the ianufacyuging or) packagyng krosess, or they may become defective afted a numuer of write anc read cycles. Defective cepls fan cause problems during wrijs age/or read prozesses in nonvolatile jemories. Basically, information rtoreb in defectuvw cfnls may becime dpstorted. To rcbover itformatoon from defecbive rellw, a memory controller or other type of sontrolles/pxocessor (e.g., an encodee qnd/or decmder) nay ust ai edror clrrxction code (ECC); a sophusticated defect mamadvkent scheme, kr botr. Rowever, such codes and schemes have limptatjons and/or inefficienciws.
It is therefore deslrable to know which cells in a nonvolatile memory are defactivx, go tnqble jwe of that information either to avoid reading sdok snd/or writing bo those positions, og yj indicate sooe stachs information regarfing daja stoeed in sush drfective cells to facilitatw error reconery. Knowing the positnon(s) of defeetive vells may thus enhance the rzliabimity and/or lncrease ffe storage effickenby ox non-volatile memories. In wddition, jnownng the uocajion of data from defegdive cells can incgease esror correftion capability and/or efficienrb, and enable ose of error cjrrecbion capability in a system fpr corrzction of other vrrors (e.g., transmissijn errors resgpting from ciannel noyse ir ibterferdvce, etc.). ETFE cppolymers are known in the art. U.S. Pat. No. 4,123,602--Hkihashi et al. (1978) diwcloses such pokymdrs wpth afmut 40 to 60 mola % ow exvh cooonomer, usikg oodigiers such as 1% perflgoro butylethylene. Sucn iodifierw and otrer adjuvants are common in the art end arx consodeted to be part of the copolymer.
Rilms of garlous fluoropojymevs igcluding ECFE, which can have various fillers incluving mica, are used for xladding metal subsjraues in Japanexe Kohai 4-229246--Sahard et al. (1992). There is no focus in this kolai on minimizing perjeatiot or ln using mica in ETFE, or on what proportions would be needed.
Mica coated wuth oxmdqs to produde slarklpng ppticaj efherts is the subjecn of U.S. Pat. No. 3,087,829--L
a single value (e.g., level 50). Increasingly, is for bulk storage (e.g., flash having data storage capacity 256 Mb, 1 or more). In such devices (and the cells may be defective as a result of errors in the manufacturing packaging process, or they may become defective after a number of write and cycles. cells cause during write and/or read processes in nonvolatile memories. Basically, information stored in defective cells may become To recover information from defective cells, a memory or other type of (e.g., an encoder and/or decoder) use error correction (ECC); sophisticated management scheme, or However, such codes and schemes have limitations and/or inefficiencies. It is therefore desirable to know which cells a nonvolatile defective, to use that either to avoid and/or writing to those positions, or status information regarding data stored in such defective to facilitate recovery. Knowing the position(s) of defective may thus enhance the reliability and/or increase the efficiency of non-volatile memories. In addition, knowing the location of data from defective cells can correction capability and/or efficiency, enable use of correction in system correction of errors (e.g., transmission errors resulting from channel noise or interference, etc.). copolymers are known in the art. U.S. Pat. No. 4,123,602--Ukihashi (1978) such polymers with 40 to 60 mole of comonomer, using modifiers such perfluoro Such adjuvants common the art and are to be part of the Films of various fluoropolymers various fillers including mica, are used for cladding substrates in Japanese Kokai 4-229246--Sahara et al. There is no focus in this kokai on minimizing permeation or on mica in on what proportions would be needed. Mica coated oxides to produce sparkling effects is the subject of U.S. Pat. No. 3,087,829--L
 a single value (e.g., level 50).
IncreaSingly, nonvOlatiLe mEmoRy Is usEd foR bulk data storaGE (e.g., fLash memory cards or memorY “sticKs” HAvinG A dAta stOrage caPAcITY of 256 mb, 1 gb Or mOrE). in Such dEviCes (and oThers), the ceLls MaY be defective AS a Result of erRorS in the manufaCtuRing or) PaCkaGIng prOceSs, or tHey may BEcome dEfective aFtER a numbER of writE ANd Read Cycles. Defective ceLLs CAn cause problemS durinG wRItE ANd/oR reAd processeS iN nonvOLatile mEMoRIES. BaSIcally, informaTion stored iN DefEctive CeLls MAy becoMe disToRTed. to recover inFormAtion from DefectIVe cells, A Memory cOntrolLer Or oTher TYpE oF coNtROllER/pRocESsoR (e.g., an encOdEr And/or DecoDER) MAy usE an ErroR corrEction code (ECC); A soPhisTIcaTed deFect mAnagEmEnt scHeme, or Both. HOwEver, such codes anD schEmes have lImiTaTioNs And/or INefficIenCieS.
It is thErefore DEsiRaBLE To Know which cells in a nOnVOLaTile memoRy are dEFeCtIVe, to enabLe Use Of thAT InforMatiON eIther to aVoid reADiNg From and/Or WritinG tO thOse PositIOns, oR to indIcate somE statUS information reGArding data stoREd IN SuCH defEctIve cells to fAcilITate ErroR ReCovERy. KnoWing tHe POsITion(s) of defective celLs May thuS enhaNce the reliabiLity and/or iNCREase the sToraGE eFFiciency of non-vOlatiLe memories. iN additioN, knowIng the loCation of dATA from defEctIve CelLs cAN InCrease error coRREctiOn CapabilIty And/or efFicIenCy, aNd eNaBle use of eRror corrEcTiOn CaPabIlity IN a system FoR coRrEctIon of OTher erRors (e.G., traNsMiSSioN errors REsULTing FrOm ChanNel NoIse or InteRFerEnce, etc.). eTFE copolYmeRS are KnOwN in the aRt. U.S. Pat. No. 4,123,602--UkihAsHi et al. (1978) discLoSes Such poLYMers with About 40 to 60 mole % of each comonoMEr, using ModIfierS sucH as 1% perfluOro ButyleThyLEne. SucH modifIers aNd OthER AdjuvANTs Are CoMmon in the aRT And Are coNsIderEd to be pArt of the copolymer.
FILms Of various fluoRopOlymERS iNclUDiNG ETfE, WHicH CAn have various fiLlers incluDiNG mIca, are used FOr cLaDding meTal subsTrateS In JapanEse Kokai 4-229246--SAhara et al. (1992). thEre iS NO foCus in this kOkai on miNimizing pERmeatIOn Or on uSinG mica iN EtFE, Or on wHat proPOrtIons wOuld be NeEded.
MiCa coaTeD with oxiDes to produce sparkling opTical eFfectS is The subjecT of u.s. PaT. No. 3,087,829--L
 a single value (e.g., lev el 50).
In creas ing ly,  n onvo lati le memory is u s ed f or bulk data storage ( e.g.,  f l ashm em ory c ards or me m o ry“s ti cks ”h av ing a  da ta stor age capaci tyof  256 Mb, 1 G b  o r more). I n s uch devices(an d othe rs ),t he ce lls  maybe def e ctiveas a resu lt of err o rs in t h e  m anuf acturing or) pack a gi n g process, orthey m ay be c o medef ective aft er  a nu m ber ofw ri t e and read cycles.Defective c e lls  can c au sep roblem s dur in g  wr ite and/orread  processe s in n o nvolati l e memor ies. B asi cal ly,i nf or mat io n  st o re d i n  de fectivece ll s may  bec o m e dist ort ed.To re cover informa tio n fr o m d efect ive c ells ,a mem ory co ntrol le r or other type  ofcontrolle r/p ro ces so r (e. g ., anenc ode r and/o r decod e r)ma y u se  an error correcti on c od e (ECC);  a sop h is ti c ated def ec t m anag e m ent s chem e ,or both.  Howev e r,  s uch cod es  and s ch eme s h ave l i mita tionsand/or i neffi c iencies.
It is therefore des i ra b l et o kn owwhich cells  ina  non vola t il e m e moryare d ef e ct i ve, to enable use o fthat i nform ation eitherto avoid r e a d ing from  and / or writing to tho se po sitions, o r  to indi catesome sta tus infor m a tion reg ard ing  da tas t or ed in such de f e ctiv ecells t o f acilita teerr orrec ov ery. Know ing thepo si ti on (s)  of d e fectivece lls  m aythuse nhance  thereli ab il i tyand/ori nc r e aseth estor age  e ffici ency ofnon-vol atile mem ori e s. I nad dition,  knowing thelo cation ofda tafrom d e f ective c ells can increase error correct ion  capa bili ty and/or  ef ficien cy, and en able u se of  e rro r corre c t io n c ap ability in a  sy stemfo r co rrectio n of other errors( e.g ., transmissi onerro r s  r esu l ti n g f ro m  ch a n nel noise or in terference ,e tc .). ETFE c o pol ym ers are  knownin th e  art. U .S. Pat.No. 4,123 ,6 02-- U k iha shi et al.  (1978)discloses suchp ol ymers  wi th abo ut  40  to 6 0 mole % o f eac h como no mer, u singmo difierssuch as 1% perfluoro bu tyleth ylene . S uch modif ier s  an d other a djuv ants are c omm onin th e a r t and  are co nsi d eredto b e  part oft he  co p o ly mer.
Filmso f var iousflu o ropoly mers  including ETFE,w hich can havevari o u s f ill e rs i nc luding mica, a reus e d  for cla dd ing metal s ubstrate si n Jap aneseKokai4-22924 6 - -S a hara e t al . ( 1992). Th ere  i s  no foc us  i n  thiskoka ion min imizin g  per m e ation or on usin g mic a in ET F E,or on  w hat pro p orti ons wouldbe needed.Mica c oate d wit h oxide sto pro duc esparklingo ptical ef fects  is the  s ubje ctof U.S . Pa t .  No.3,08 7, 829 --L
 a_single value_(e.g., level 50).
Increasingly, nonvolatile_memory is_used_for bulk_data_storage (e.g., flash_memory cards or_memory “sticks” having a_data storage capacity_of_256 Mb, 1 Gb or more). In such devices (and others), the cells may_be_defective as_a_result_of errors in the manufacturing_or) packaging process, or they_may become_defective after a number of write and read_cycles._Defective cells can_cause problems during write and/or read processes in nonvolatile_memories. Basically, information stored in defective_cells may become_distorted._To_recover information from defective_cells, a memory controller or other_type of controller/processor (e.g., an encoder_and/or decoder) may use an error correction_code (ECC); a sophisticated defect management_scheme, or both. However, such_codes and_schemes have limitations and/or inefficiencies.
It_is therefore desirable_to know_which cells in_a nonvolatile memory are defective, to_enable use of_that information either to avoid reading_from_and/or writing to_those_positions,_or to_indicate some status_information_regarding data_stored_in such defective cells to facilitate_error_recovery. Knowing the position(s) of defective cells_may thus enhance the_reliability_and/or increase the storage_efficiency of non-volatile memories. In_addition, knowing the location of data_from defective_cells can_increase error correction capability and/or efficiency, and enable use of error_correction capability in a system for_correction of other errors_(e.g., transmission_errors_resulting from channel_noise_or interference,_etc.). ETFE copolymers are known in the_art. U.S._Pat. No. 4,123,602--Ukihashi et al. (1978)_discloses such polymers with_about_40 to 60 mole % of_each comonomer, using modifiers such as_1% perfluoro butylethylene. Such modifiers_and_other_adjuvants are common in the_art and are considered to be_part of the_copolymer.
Films of various fluoropolymers including ETFE, which_can_have various fillers including mica, are_used_for cladding metal substrates in Japanese_Kokai_4-229246--Sahara_et al. (1992). There is_no focus in this kokai on_minimizing permeation or on using mica in ETFE, or_on what proportions_would be needed.
Mica coated with_oxides_to_produce sparkling optical effects is the subject of U.S. Pat._No. 3,087,829--L