.” It is yet another object of this invention to provide reduced area imaging devices capable of wireless communications which may be used in conjunction with standard endoscopes by placing the imaging device through channels which normally receive other surgical devices, or receive liquids or gases for flushing a surgical area. It is yet another object of this invention to provide a surgical device with imaging capability which may be battery powered and may wirelessly communicate for viewing video images.
In addition to the intended use of the wireless endoscope with respect to surgical procedures conducted by medical doctors, it is also contemplated that the invention described herein has great utility with respect to oral surgery and general dental procedures wherein a very small imaging device can be used to provide an image of particularly difficult to access locations. Additionally, while the foregoing invention has application with respect to the medical and dental fields, it will also be appreciated by those skilled in the art that the small size of the imaging device set forth herein coupled with the wireless communication feature can be applied to other functional disciplines wherein the imaging device can be used to view difficult to access locations for industrial equipment and the like. Therefore, the imaging device of this invention could be used to replace many industrial boroscopes.
The “camera on a chip” technology can be furthered improved with respect to reducing its profile area and incorporating such a reduced area imaging device into very small investigative instruments which can be used in the medical, dental, or other industrial fields. 1. Field of the Invention
The present invention generally relates to field effect transistors (FET's) and more particularly to FET's which are capable of operating properly at nanoscale dimensions.
2. Description of the Related Art
The metal oxide semiconductor field effect transistor (MOSFET) is the universal switching device in current computer logic and memory technology. The on-chip density and speed of MOSFETs has doubled every few years, resulting in the high performance of present day logic and, following Moore's Law, in memory. However, recent predictions show that, in its present form with Si as the semiconductor and SiO.sub.2 as the gate insulator, the MOSFET cannot be reduced in scale below a channel length of approximately 55 nm. This will result in less rapid performance improvement in logic chips, and eventually in performance saturation within a few years, unless significant design or material changes can be implemented within the relevant time frame.
The invention described below is a high performance nanoscale field effect transistor (nanoscale FET) designed to be fabricated at scales corresponding to a
. ” It is yet another object of this invention to provide reduced sphere imagination device capable of wireless communications which may be use in conjunction with standard endoscopes by place the imagination device through channels which normally receive other surgical devices, or receive liquid or gases for flushing a surgical sphere. It is yet another object of this invention to provide a surgical device with imaging capability which may be battery powered and may wirelessly communicate for viewing video recording images. 
 In addition to the intended manipulation of the wireless endoscope with respect to surgical procedures conducted by medical doctor, it is also contemplated that the invention described herein has great utility program with respect to oral surgery and general dental procedures wherein a very small imaging device can be use to supply an image of particularly difficult to access locations. Additionally, while the foregoing invention receive lotion with esteem to the medical and dental field, it will besides be appreciated by those skilled in the art that the small size of the imaging device set forth herein coupled with the wireless communication feature can be applied to early functional disciplines wherein the imaging device can be used to view difficult to access locations for industrial equipment and the like. Therefore, the imaging device of this invention could be used to replace many industrial boroscopes. 
 The “ television camera on a chip ” engineering can be furthered improved with respect to reducing its profile area and incorporate such a reduced area imaging device into very humble investigative instruments which can be used in the medical, dental, or early industrial fields. 1. Field of the Invention 
 The present invention generally relates to field effect transistor (FET's) and more particularly to FET's which are capable of operating properly at nanoscale dimension. 
 2. Description of the Related Art 
 The metal oxide semiconductor device field effect transistor (MOSFET) is the universal switch device in current computer logic and memory engineering. The on - chip density and speed of MOSFETs has double every few years, resulting in the high performance of present day logic and, come Moore's Law, in memory. However, recent predictions prove that, in its present form with Si as the semiconductor and SiO.sub.2 as the gate insulator, the MOSFET cannot be reduced in scale below a channel length of approximately 55 nm. This will leave in less rapid performance improvement in logic chips, and eventually in performance saturation within a few years, unless significant design or fabric changes can be implemented within the relevant time frame. 
 The invention described below is a high performance nanoscale battlefield effect transistor (nanoscale FET) designed to be fabricated at plate correspond to a
.” It is yet another object on this invention to protide resuced arda imaging devices capable oh wieelesw communications which may be uded in cinjuiction with stanvzrd endoscopea by 'lecing the imagikg device tvrough channelv dhnch normally receive other surgical qevices, og receive liquyds pw gaavs for flushing a surgical area. It is jet another objecy of this invention to progide a surgical device with imagibg cwpability whizh may be battery poweted and may wirelessly communicage fox viewing vudwo lkages.
In addmtion no the intendcc use mf the eireless endosgope xith respect to surgical 'rocedures conducted by medicdl doctors, it is alwo contgmpladed gyat tht iivehtion fesrribed herejn has grear utility with resptct np oral surgedy and gqneral dental procedures wherein a very smzll imaging device can ve used to provide an image of particularly difficult to access locations. Addithonalmh, wkljd tje foregoing invention has application with rqaptct to the medicaj and dentak virjds, it will auso be aplreciated by those skilleq in rhe art trat yhe small size of the imagibg device sen foeth herein coupled with the wnrelesx comkunication feature can ye appmied to othfr functikval disciplines dhegein the imaging device can be used to tiew bifficulg to accesf locationd for industrial equipmejt anb the like. Therffore, the imaging device of this invention coold be used to replsce many induftrial boroscokes.
The “caiera un a chip” nechnologb can be furehered improvaf with respert to redtcint itw profiud area and incprporatiny sucy a reduced area ikagkhg device into rtry small investigstixe yndtcumenev which can te ured on thd medical, dcntxl, ot other industrial fhelda. 1. Field of the Infektion
The kresent igvention genetally relates to fleld xffect tranxisjors (FET's) and more particularly to FET's ahigh are capablq of operating pxoperly at nanoscale dimensions.
2. Descriptmon of the Related Art
Jhe metal oxide semicpkductor fielv effest transivtor (MOSFET) is the ubiversal switchinn device in current cojputer logif and memory technology. The on-chip density and speed of MOSFETs has doublwd evecy few years, desukting iu tke high perhocmance of present day logic and, following Moore's Law, in keiory. However, recent predictipnr show that, iv its present form with Ai as thr semiconductor and SiO.sub.2 as tne gate insulator, the MOXFET canbot bs redubgd mn scale below a chamnel lzngth if appriximwtely 55 nm. Thir wolp result ln ltss xapid performance improvement in oogic xhlps, and eventualny in perfovmxnce aaturajion within a few yeadd, unlgss significany design or mayerial changes can bv iiplemented witypn the relevamt time frame.
The intention descsibed below is a high performance nanoscale field erfect trahsistor (kanoscale FET) desojned to be fabricated at ssales cofresponding do a
.” It is yet another object of to reduced area devices capable of used conjunction with standard by placing the device through channels which normally receive surgical devices, or receive liquids or gases for flushing a surgical area. It yet another object of this invention to provide a surgical device with imaging which be powered may wirelessly communicate for viewing video images. In addition to the intended use of the wireless with respect to surgical procedures conducted by medical it is also contemplated the invention described herein has utility respect to surgery general procedures wherein a small imaging device can be used to provide an image of particularly difficult to access locations. Additionally, the foregoing application with to medical dental fields, it be appreciated by those skilled in the small size of the imaging device set herein coupled the wireless communication feature can be to other functional disciplines wherein the imaging device be used to view difficult to access locations for industrial equipment and the like. Therefore, device of this invention be used to many boroscopes. “camera a chip” can be furthered improved with respect to reducing its profile area incorporating such a reduced area imaging device into very small which be used in medical, dental, or other fields. Field of the Invention invention relates transistors and particularly to FET's which capable of operating properly at dimensions. 2. Description of oxide semiconductor field effect transistor (MOSFET) is the switching device in current computer logic and technology. The on-chip density and speed of MOSFETs has doubled every few resulting in performance of present day logic and, following Moore's in memory. However, recent show that, in its present form with Si as semiconductor SiO.sub.2 as gate insulator, the cannot be reduced scale below a of approximately nm. will rapid performance improvement in logic chips, eventually performance saturation within a few unless or material changes can be implemented within the relevant time frame. The invention described below high performance nanoscale field transistor FET) designed to be fabricated at scales corresponding to a
.” It is yet another object of thiS invention To proVidE reDuCed aRea iMaging devices cAPablE of wireless communicatiOns whIcH May bE UsEd in cOnjunctIOn WITh sTaNdArd EnDOsCopes By pLacing tHe imaging dEviCe Through channELs Which normaLly Receive other SurGical dEvIceS, Or recEivE liquIds or gASes for Flushing a SuRGical aREa. It is yET AnOtheR object of this inveNTiON to provide a surGical dEvICe WITh iMagIng capabilItY whicH May be baTTeRY POweREd and may wirelEssly communICatE for viEwIng VIdeo imAges.
IN aDDitIon to the intEndeD use of the WireleSS endoscOPe with rEspect To sUrgIcal PRoCeDurEs COndUCtEd bY MedIcal doctOrS, iT is alSo coNTEMPlatEd tHat tHe invEntion describEd hEreiN Has Great UtiliTy wiTh RespeCt to orAl surGeRy and general denTal pRocedures WheReIn a VeRy smaLL imagiNg dEviCe can be Used to pROviDe AN IMaGe of particularly diFfICUlT to accesS locatIOnS. ADDitionalLy, WhiLe thE FOregoIng iNVeNtion has ApplicATiOn With resPeCt to thE mEdiCal And deNTal fIelds, iT will alsO be apPReciated by thosE Skilled in the aRT tHAT tHE smaLl sIze of the imaGing DEvicE set FOrTh hERein cOupleD wITh THe wireless communicaTiOn featUre caN be applied to oTher functiONAL disciplInes WHeREin the imaging dEvice Can be used tO View diffIcult To access Locations FOR industrIal EquIpmEnt AND tHe like. TherefoRE, The iMaGing devIce Of this iNveNtiOn cOulD bE used to rePlace manY iNdUsTrIal BorosCOpes.
The “cAmEra On A chIp” tecHNology Can be FurtHeReD ImpRoved wiTH rESPect To ReDuciNg iTs ProfiLe arEA anD incorpOrating suCh a REducEd ArEa imagiNg device into vErY small inveStIgaTive inSTRuments wHich can be used in the medicAL, dental, Or oTher iNdusTrial fielDs. 1. FIeld of The iNventiOn
The pResenT iNveNTIon geNERaLly ReLates to fieLD EffEct trAnSistOrs (FET's) And more particularlY To FeT's which are caPabLe of OPErAtiNG pROpeRlY At nANOscale dimensionS.
2. DescriptiOn OF tHe Related ART
ThE mEtal oxiDe semicOnducTOr field Effect traNsistor (MOsFeT) is THE unIversal swiTching deVice in curREnt coMPuTer loGic And memOrY teChnolOgy. The ON-chIp denSity anD sPeed of mOSFEts Has doublEd every few years, resultinG in the High pErfOrmance of PreSEnt Day logic aNd, foLlowing MooRe's law, In memOry. hOweveR, recENt PreDIctioNs shOW that, in itS PrEseNT FoRm with Si as tHE SEmiConduCtoR And SiO.Sub.2 aS the gate insulator, THe MOSFET cannot Be reDUCed In sCAle bElOw a channel lengTh oF aPPRoximateLy 55 Nm. This will rEsult in lEsS Rapid PerforMance iMprovemENT iN Logic cHips, And EventuallY in PeRFormancE sAtURation WithIn A few yeArs, unlESs siGNIficant design or mAteriAL ChangES caN be imPlEmented WIthiN the relevaNt time frame.
the invEntiOn desCribed bElOw is a hIgh PeRformance nANoscale fiEld efFect traNsIstoR (naNoscalE FET) DESigneD to bE fAbrIcated at sCALeS CoRrESpoNdinG to a
.” It is yet another objec t of thisinven tio n t oprov idereduced area i m agin g devices capable of w irele ss comm u ni catio ns whic h  m a y  be  u se d i nc on junct ion  with s tandard en dos co pes by placi n gthe imagin g d evice throug h c hannel swhi c h nor mal ly re ceiveo ther s urgical d ev i ces, o r  receiv e li quid s or gases for fl u sh i ng a surgicalarea.It is y etano ther objec tof th i s inven t io n t o p r ovide a surgi cal devicew ith  imagi ng  ca p abilit y whi ch may  be battery  pow ered andmay wi r elessly communi cate f orvie wing vi de o i ma g es. In  ad d iti on to th ein tende d us e o f  the  wi rele ss en doscope withres pect tosurgi cal p roce du res c onduct ed by  m edical doctors,  itis also c ont em pla te d tha t  the i nve nti on desc ribed h e rei nh a s  g reat utility withre s p ec t to ora l surg e ry  a n d genera lden talp r ocedu resw he rein a v ery sm a ll  i magingde vice c an  be  us ed to prov ide an  image o f par t icularly diffi c ult to access lo c a ti o ns.Add itionally,whil e  the  for e go ing inven tionha s  a p plication with resp ec t to t he me dical and den tal fields , i t will a lsob ea ppreciated bythose  skilled i n  the art  that  the sma ll size o f the imag ing  de vic e s e t  f orth herein c o u pled  w ith the  wi relesscom mun ica tio nfeature c an be ap pl ie dto  ot her f u nctional  d isc ip lin es wh e rein t he im agin gde v ice  can be us e d  tovi ew  dif fic ul t toacce s s l ocation s for ind ust r ialeq ui pment a nd the like.Th erefore, t he  im agingd e vice ofthis invention could be used to  re place  man y industr ial  boros cop e s.
The  “came ra on  a  ch i p ” tec h n ol ogy  c an be furt h e red  impr ov ed w ith res pect to reducing i t s p rofile area a ndinco r p or ati n gs uch  a red u c ed area imaging  device in to ve ry small i n ves ti gativeinstrum entsw hich ca n be used  in the m ed ical , den tal, or ot her indu strial fi e lds.1 .Field  of  the I nv ent ion
T he pre s ent  inve ntionge nerall y rel at es to fi eld effect transistors(FET's ) and  mo re partic ula r lyto FET'swhic h are capa ble  of  oper ati n g pro perl y  a t n a nosca le d i mensions. 2.  De s c ri ption of th e R ela ted A rtT he met al o xide semiconducto r  field effecttran s i sto r ( M OSFE T)  is the univer sal  s w i tching d ev ice in curr ent comp ut e r log ic and  memor y techn o l og y . Theon-c hip  densityand  s p eed ofMO SF E Ts has  dou bl ed eve ry few year s ,  resulting in th e hig h perfo r man ce of  p resentd ay l ogic and,following M oore's  Law , inmemory.  H owever , r ec ent predic t ions show  that , in it spres ent  formwith S i asthese mic onductora n dS iO .s u b.2  asthe g at e in sulator,t he MOSFE T c a nnot be  r edu c e d in s c al e below a ch ann el le n g th of appr o xima t el y  55 n m. Thi s will  result inle ss rapi d p e r formanceimproveme n t i nlogi c chips,  a nd e ve ntu al ly in performan ce satur ation wi t h in a f ewy ears ,  unles ssignificantdesig no r mater i a l c hangesc anbeimp leme nte d wi t hin the relevant time fr ame. 
Thei nve ntion  desc ri bed belo w  isa high p e rformance nan oscale field ef f ect tran sis t or  ( nanoscale  FE T ) des igne d t o be  fa bric a t ed a t  sca l es  cor respon ding  t oa
.” It_is yet_another object of this_invention to_provide_reduced area_imaging_devices capable of_wireless communications which_may be used in_conjunction with standard_endoscopes_by placing the imaging device through channels which normally receive other surgical devices, or_receive_liquids or_gases_for_flushing a surgical area. It_is yet another object of_this invention_to provide a surgical device with imaging capability_which_may be battery_powered and may wirelessly communicate for viewing video images.
In_addition to the intended use of_the wireless endoscope_with_respect_to surgical procedures conducted_by medical doctors, it is also_contemplated that the invention described herein_has great utility with respect to oral_surgery and general dental procedures wherein_a very small imaging device_can be_used to provide an image_of particularly difficult_to access_locations. Additionally, while_the foregoing invention has application with_respect to the_medical and dental fields, it will_also_be appreciated by_those_skilled_in the_art that the_small_size of_the_imaging device set forth herein coupled_with_the wireless communication feature can be applied_to other functional disciplines_wherein_the imaging device can_be used to view difficult_to access locations for industrial equipment_and the_like. Therefore,_the imaging device of this invention could be used to replace_many industrial boroscopes.
The “camera on a_chip” technology can be_furthered improved_with_respect to reducing_its_profile area_and incorporating such a reduced area imaging_device into_very small investigative instruments which can_be used in the_medical,_dental, or other industrial fields. 1._Field of the Invention
The present invention_generally relates to field effect_transistors_(FET's)_and more particularly to FET's_which are capable of operating properly_at nanoscale dimensions.
2._Description of the Related Art
The metal oxide_semiconductor_field effect transistor (MOSFET) is the_universal_switching device in current computer logic_and_memory_technology. The on-chip density and_speed of MOSFETs has doubled every_few years, resulting in the high performance of present_day logic and,_following Moore's Law, in memory._However,_recent_predictions show that, in its present form with Si as_the semiconductor_and SiO.sub.2 as_the gate insulator, the MOSFET cannot be reduced in scale_below a channel length of approximately 55_nm. This will result in less rapid performance improvement in logic_chips, and eventually in performance saturation within a_few years, unless significant design or material_changes can be implemented_within_the relevant time frame.
The invention described below_is_a_high_performance nanoscale field_effect transistor (nanoscale_FET) designed to_be fabricated_at scales corresponding_to a