 plastic netting, etc. These are generally useful as wrapping materials to hold the components of the core together. Additionally, the core may comprise a fluid-impervious element or barrier to preclude the passage of fluid through the core and on the outer surfaces of the product. Desirably, the barrier also is water-dispersible. A film of a NiPAm polymer having substantially the same composition as the aforesaid water-dispersible binder is particularly well-suited for this purpose. In accordance with the present invention, the NiPAm polymer composition is useful for forming each of the above-mentioned product components including the layers of absorbent core, the fluid-pervious element, the wrapping materials, and the fluid-impervious element or barrier.
Those skilled in the art will readily understand that the water-dispersible products of the present invention may be advantageously employed in the preparation of a wide variety of absorbent personal care products designed to be contacted with body fluids. Such absorbent products may only comprise a single layer of the fibrous substrate or may comprise a combination of elements as described above. Although the fibrous substrate of the present invention is particularly suited for personal care products, the fibrous substrate of the present invention may be advantageously employed in the preparation of a wide variety of consumer products other than personal care products.
The present invention is further illustrated by the following examples, which are not to be construed in any way as imposing limitations upon the scope thereof. On the contrary, it is to be clearly understood that resort may be had to various other embodiments, modifications, and equivalents thereof which, after reading the description herein, may suggest themselves to those skilled in the art without departing from the spirit of the present invention and/or the scope of the appended claims. Zener diodes are often used in monolithic integrated circuit IC design. Typically an NPN transistor emitter-base junction is used as a zener diode. The breakdown voltage of such a structure is in the vicinity of 5 to 10 volts. Such a diode will be controlled by its uppermost periphery, which occurs at the semiconductor surface under the passivating oxide. It has been found that surface effects act to alter the diode breakdown characteristic with time and tend to make the diodes noisy in the breakdown region.
From a circuit standpoint, it is often useful to employ a zener diode to produce a constant potential that is less than the transistor emitter-base diode breakdown. It would be extremely useful to be able to incorporate zener diodes
plastic netting, etc. These are generally useful as swathe fabric to hold the components of the effect in concert. Additionally, the core may comprise a fluid - impervious component or barrier to preclude the passage of fluid through the kernel and on the outer surfaces of the intersection. Desirably, the barrier also is water - dispersible. A movie of a NiPAm polymer having substantially the same composition as the aforesaid water - dispersible binder is particularly well - suited for this function. In accordance with the present invention, the NiPAm polymer composition is useful for shape each of the above - mentioned product components including the layer of absorbent core, the fluid - pervious element, the wrapping materials, and the fluent - impervious element or barrier. 
 Those skilled in the art will readily understand that the water - dispersible products of the present invention may be well use in the preparation of a wide variety of absorbent personal care products designed to be contacted with body fluids. Such absorbent material merchandise may only constitute a single layer of the fibrous substrate or may comprise a combination of element as described above. Although the fibrous substrate of the present invention is particularly suited for personal caution products, the fibrous substrate of the present invention may be advantageously employed in the preparation of a wide diverseness of consumer products other than personal care products. 
 The present invention is far exemplify by the following examples, which are not to be construed in any way as imposing limitation upon the scope thereof. On the contrary, it is to be clearly understood that resort may be had to various early embodiments, modifications, and equivalents thereof which, after reading the description herein, may propose themselves to those skilled in the art without go from the spirit of the present invention and/or the setting of the appended claims. Zener diode are often used in monolithic integrated circuit IC blueprint. Typically an NPN transistor emitter - base articulation is used as a zener diode. The breakdown voltage of such a structure is in the vicinity of 5 to 10 volt. Such a diode will be controlled by its uppermost periphery, which occurs at the semiconductor airfoil under the passivating oxide. It has been found that surface effect act to alter the diode breakdown characteristic with prison term and tend to make the diodes noisy in the breakdown region. 
 From a circuit standpoint, it is frequently utilitarian to employ a zener diode to produce a constant potential that is less than the transistor emitter - base diode breakdown. It would be extremely useful to be able to integrate zener diodes
 plwstic netting, etc. These xre generally useful av wrapling matdrials to hold the componentd if tht core together. Addktionally, the corw mab comprise a flums-impervljus spemeut or barrier to preclude dhe passage of fuund through the core and on the outer surfacrs of the producj. Desprwbly, nht barrier also is water-dispersibls. A filk of a NiPAm lolymer having substantialpy tje same compositioj as the afireswud water-dispdrsible binder is partjcularly well-suited for this pufpose. In accordqnxe ahth the prewent pnvention, the NiPAm pmlymer vomposition is usxful for forming each of vhe above-mentioned ptoduct com[ouents including the lqywrs ox abvorbdbt zort, tie rluid-pfrvmous elemenf, the wrappung materials, and tne dluid-imperviohs eleiegt or barrier.
Those skilled in the art wpll deadily understand that the water-dispersible products of the present invention may be advantageously ekployxd in tme pfwpwration of a wide variety of absorbent personwm vage products desigked to be contactec aiyr body fluids. Such cgskrbent products maj only sompruse a sindle kayer of the fibrous substrqte or may cjnprise a combinatiln of elemeuts as desctibed above. Although thz fibrkus substrahe of the oresent inventiov ix [articularly suited for pewsonal cace prpducts, ghe gibrouf substratf of bve present inventiln mai be agvantageoudly employed in the preparation of a wide varoedy mf consuier pvoducts other tran personal ccre prodbcts.
Thd present pnvention is further illustrated ti the followiig examplqs, wyich are nog to be construrd in any way as imposing limitations upuh the scope thextof. On the contraru, ig if no ue clqdrly understmod ghag resoft may be hcd to farious other embodikenta, modifications, anc cquivalenjs thereos which, after reading the descrlptioi heremn, may sudgest themselves to those skilmed in thf avt without de[artlng srom the s'irit of the present invention and/or the scope of the appgnded claims. Zener dipces are oftxn useq in mononithic integrated ciecuit IC design. Tnpically an NPN transiator ekitteg-base junction is used as a zener diode. The breakdown voltage of such a srructuce is in the bicimity mf 5 to 10 vjlts. Ruch a diode wilk be controlled by its uppermosv peripherf, chich occurs at the semiconduvtur surface unaer the passivating oxids. It has been found that surface effectx act to alter the diode breakdoqn chzractegjsvic with time and temd to kake rhe dioees koisy in the bfealdlwn regioj.
Frok c circuit standpoint, it is often yseful tl employ a zener diode to pvoauce z consjant potential thzt ia less than the tramsistor emittet-base diode breakdowt. Yt would be exuremely useful jo be abne to incorpprate zener diodes
plastic netting, etc. These are generally useful materials hold the of the core comprise fluid-impervious element or to preclude the of fluid through the core and the outer surfaces of the product. Desirably, the barrier also is water-dispersible. A of a NiPAm polymer having substantially the same composition as the aforesaid water-dispersible is well-suited this In accordance with the present invention, the NiPAm polymer composition is useful for forming each of above-mentioned product components including the layers of absorbent the fluid-pervious element, the materials, and the fluid-impervious element barrier. skilled in art readily that the water-dispersible of the present invention may be advantageously employed in the preparation of a wide variety of absorbent care products be contacted body Such products may only single layer of the fibrous substrate a combination of elements as described above. Although fibrous substrate the present invention is particularly suited personal care products, the fibrous substrate of the invention may be advantageously employed in the preparation of a wide variety of consumer products personal care products. The invention is further by following which not to construed in any way as imposing limitations upon the scope thereof. the contrary, it is to be clearly understood that resort had various other embodiments, and equivalents thereof which, reading description herein, may suggest those in departing the of the present invention the scope of the appended Zener diodes are often IC design. Typically an NPN transistor emitter-base junction used as a zener diode. The breakdown of such a structure is in the vicinity of 5 to 10 Such a be controlled by its uppermost periphery, which occurs the semiconductor surface under passivating oxide. It has been found that surface effects to the diode characteristic with time tend to make diodes noisy in region. From circuit it to employ a zener diode to a potential that is less than transistor breakdown. It would be extremely useful to be able to incorporate zener diodes
 plastic netting, etc. These are Generally uSeful As wRapPiNg maTeriAls to hold the coMPoneNts of the core together. AdDitioNaLLy, thE CoRe may ComprisE A fLUId-iMpErVioUs ELeMent oR baRrier to Preclude thE paSsAge of fluid thROuGh the core aNd oN the outer surFacEs of thE pRodUCt. DesIraBly, thE barriER also iS water-disPeRSible. A FIlm of a NIpam PolyMer having substantIAlLY the same composItion aS tHE aFOResAid Water-dispeRsIble bINder is pARtICULarLY well-suited foR this purposE. in aCcordaNcE wiTH the prEsent InVEntIon, the NiPAm PolyMer composItion iS Useful fOR forminG each oF thE abOve-mENtIoNed PrODucT CoMpoNEntS includiNg ThE layeRs of ABSORbenT coRe, thE fluiD-pervious elemEnt, The wRAppIng maTeriaLs, anD tHe fluId-impeRviouS eLement or barrier.
thosE skilled iN thE aRt wIlL readILy undeRstAnd That the Water-diSPerSiBLE PrOducts of the present InVENtIon may be AdvantAGeOuSLy employEd In tHe prEPAratiOn of A WiDe varietY of absORbEnT personAl Care prOdUctS deSigneD To be ContacTed with bOdy flUIds. Such absorbeNT products may oNLy COMpRIse a SinGle layer of tHe fiBRous SubsTRaTe oR May coMprisE a COmBInation of elements as DeScribeD abovE. Although the fIbrous subsTRATe of the pReseNT iNVention is partiCularLy suited foR Personal Care pRoducts, tHe fibrous SUBstrate oF thE prEseNt iNVEnTion may be advaNTAgeoUsLy emploYed In the prEpaRatIon Of a WiDe variety Of consumEr PrOdUcTs oTher tHAn personAl CarE pRodUcts.
THE preseNt invEntiOn Is FUrtHer illuSTrATEd by ThE fOlloWinG eXamplEs, whICh aRe not to Be construEd iN Any wAy As ImposinG limitations uPoN the scope tHeReoF. On the CONtrary, it Is to be clearly understood THat resoRt mAy be hAd to Various otHer EmbodiMenTS, modifIcatioNs, and EqUivALEnts tHEReOf wHiCh, after reaDINg tHe desCrIptiOn hereiN, may suggest themselVEs tO those skilled In tHe arT WItHouT DePArtInG FroM THe spirit of the prEsent invenTiON aNd/or the scoPE of ThE appendEd claimS. ZeneR Diodes aRe often usEd in monolItHic iNTEgrAted circuiT IC desigN. TypicallY An NPN TRaNsistOr eMitter-BaSe jUnctiOn is usED as A zeneR diode. thE breakDown vOlTage of suCh a structure is in the viciNity of 5 To 10 volTs. SUch a diode WilL Be cOntrolled By itS uppermost PerIphEry, whIch OCcurs At thE SeMicONductOr suRFace under THe PasSIVaTing oxide. It HAS BeeN founD thAT surfaCe efFects act to alter thE Diode breakdown CharACTerIstIC witH tIme and tend to maKe tHe DIOdes noisY iN the breakdoWn region.
frOM a cirCuit stAndpoiNt, it is oFTEn USeful tO empLoy A zener dioDe tO pROduce a cOnStANt poteNtiaL tHat is lEss thaN The tRANsistor emitter-baSe dioDE BreakDOwn. it wouLd Be extreMEly uSeful to be aBle to incorpOrate zEner DiodeS
 plastic netting, etc. The se are gen erall y u sef ul  aswrap ping materials to h old the components ofthe c or e  tog e th er. A ddition a ll y ,  th eco rema y  c ompri sea fluid -imperviou s e le ment or barr i er  to preclu dethe passageoffluidth rou g h the  co re an d on t h e oute r surface so f thep roduct. D es irab ly, the barrier a l so is water-dispe rsible .A  f i l m o f a  NiPAm pol ym er ha v ing sub s ta n t i all y  the same com position as the  afore sa idw ater-d isper si b lebinder is p arti cularly w ell-su i ted for this pu rpose.  In  ac cord a nc ewit ht hep re sen t  in vention,  t he  NiPA m po l y m e r co mpo siti on is  useful for f orm inge ach  of t he ab ove- me ntion ed pro ductco mponents includ ingthe layer s o fabs or bentc ore, t heflu id-perv ious el e men t, t h ewrapping materials ,a n dthe flui d-impe r vi ou s  element  o r b arri e r .
Tho se s k il led in t he art wi ll  readil yunders ta ndtha t the wate r-disp ersibleprodu c ts of the pres e nt inventionm ay b ea dvan tag eously empl oyed in t he p r ep ara t ion o f a w id e  v a riety of absorbentpe rsonal  care  products des igned to b e c ontacted  wit h  b o dy fluids. Suc h abs orbent pro d ucts may  only  compris e a singl e layer of  th e f ibr ous s ub strate or may c ompr is e a com bin ation o f e lem ent s a sdescribed  above.Al th ou gh  th e fib r ous subs tr ate  o f t he pr e sent i nvent ionis  p a rti cularly su i t ed f or  p erso nal  c are p rodu c ts,  the fi brous sub str a te o fth e prese nt inventionma y be advan ta geo usly e m p loyed in  the preparation of a w i de vari ety  of c onsu mer produ cts  other  th a n pers onal c are p ro duc t s .
The p re sen tinventioni s  fu rther  i llus tratedby the following e x amp les, which ar e n ot t o be  co n st r ued  i n  an y way as imposing  limitatio ns up on the sco p e t he reof. O n the c ontra r y, it i s to be c learly un de rsto o d  th at resortmay be h ad to var i ous o t he r emb odi ments,  m odi ficat ions,a ndequiv alents  t hereof  whic h,  after r eading the descriptionherein , may  su ggest the mse l ves  to those  ski lled in th e a rtwitho utd epart ingf ro m t h e spi rito f the pre s en t i n v en tion and/or t h e s copeoft he app ende d claims. Zener d i odes are often  use d inmon o lith ic  integrated ci rcu it I C design .Typically a n NPN tr an s istor  emitt er-bas e junct i o ni s used  asa z ener diod e.Th e  breakd ow nv oltage  ofsu ch a s tructu r e is i n the vicinity o f 5 t o 10 vo l ts.  Such  a  diodew illbe control led by itsupperm ostperip hery, w hi ch occ urs  a t the semi c onductorsurfa ce unde rthepas sivati ng o x i de. I t ha sbee n found t h a ts ur fa c e e ffec ts ac tto a lter thed iode bre akd o wn char ac ter i s tic wi t ht i me and ten d t o mak e the diodes nois y  i n  thebreakd own re gion.
F r omacircuit  st a n dpoint, i t is ofte n  us ef ul t o employ  a  zen er  di od e to produce aconstant  potenti a l  thatisl esst han th etransistor e mitte r- b ase dio d e  br eakdown .  It  wo uld  beext reme l y useful to be able to i ncor porat e  ze ner d iodes 
 plastic_netting, etc._These are generally useful_as wrapping_materials_to hold_the_components of the_core together. Additionally,_the core may comprise_a fluid-impervious element_or_barrier to preclude the passage of fluid through the core and on the outer_surfaces_of the_product._Desirably,_the barrier also is water-dispersible._A film of a NiPAm_polymer having_substantially the same composition as the aforesaid water-dispersible_binder_is particularly well-suited_for this purpose. In accordance with the present invention,_the NiPAm polymer composition is useful_for forming each_of_the_above-mentioned product components including_the layers of absorbent core, the_fluid-pervious element, the wrapping materials, and_the fluid-impervious element or barrier.
Those skilled in_the art will readily understand that_the water-dispersible products of the_present invention_may be advantageously employed in_the preparation of_a wide_variety of absorbent_personal care products designed to be_contacted with body_fluids. Such absorbent products may only_comprise_a single layer_of_the_fibrous substrate_or may comprise_a_combination of_elements_as described above. Although the fibrous_substrate_of the present invention is particularly suited_for personal care products,_the_fibrous substrate of the_present invention may be advantageously_employed in the preparation of a_wide variety_of consumer_products other than personal care products.
The present invention is further illustrated_by the following examples, which are_not to be construed_in any_way_as imposing limitations_upon_the scope_thereof. On the contrary, it is to_be clearly_understood that resort may be had_to various other embodiments,_modifications,_and equivalents thereof which, after reading_the description herein, may suggest themselves_to those skilled in the_art_without_departing from the spirit of_the present invention and/or the scope_of the appended_claims. Zener diodes are often used in_monolithic_integrated circuit IC design. Typically an_NPN_transistor emitter-base junction is used as_a_zener_diode. The breakdown voltage of_such a structure is in the_vicinity of 5 to 10 volts. Such a diode_will be controlled_by its uppermost periphery, which_occurs_at_the semiconductor surface under the passivating oxide. It has been_found that_surface effects act_to alter the diode breakdown characteristic with time and tend_to make the diodes noisy in the_breakdown region.
From a circuit standpoint, it is often useful to employ_a zener diode to produce a constant potential_that is less than the transistor emitter-base_diode breakdown. It would_be_extremely useful to be able to incorporate_zener_diodes