 the preset rotation direction, either a or b, or the hinge unit 120 may be damaged. Embodiments of the present disclosure relate generally to methods and apparatus for monitoring temperature, humidity, and/or other environmental or chemical analog variables. More particularly, although not exclusively, these embodiments are concerned with the detection of product abuses such as spoilage and/or the detection of the level of freshness or environmental abuses of products, equipment or consumable items.
As an introduction to the problems solved by the present application, it is generally desirable in the art of making smart labels and smart packaging products to be able to measure the integral of temperature, humidity, or other variable over time. Such an integration measurement can be used to indicate a degree of exposure to undesirable environmental conditions. Time-Temperature Integration (TTI) and Time-Humidity Integration (THI) are two such valuable metrics used to determine product abuses or levels of freshness.
To accomplish such measurements, it is known in the art that a high degree of accuracy can be obtained using an Analog to Digital Converter (ADC), together with a processing logic unit that performs floating-point algorithms. Alternately, a microprocessor, a Programmable Logic Device (PLD) or a Digital Signal Processor (DSP) type of processing platform can be used.
When considering the cost of goods required to build such processing circuitry into smart labels and smart packages, even at the smallest levels of integration (deep sub-micron), using fully custom Application Specific ICs (ASICs), the cost of goods is too high to be applicable in a typical packaging situation. Cost sensitivities drive the need for lower-cost and lower-power circuitry for smart label and smart packaging devices. This invention relates to semiconductor materials. In particular, this invention relates to a method for doping amorphous semiconductors to produce a doped material having higher conductivity with fewer defects.
Control of the conductivity type (n-type or p-type) of a semiconductor material is found to be necessary in many device applications, such as diodes solar cells and transistors. Normally the conductivity type is controlled by the addition of trace amounts of substitutional impurities with one extra or one less valence electron, for n-type and p-type material, respectively.
The problem with this doping mechanism, in both crystalline and amorphous semiconductors, is that some fraction of the dopant impurities inevitably form complexes with each other or other impurities or defects and generate states near the middle of the semiconductor's bandgap. Such states
the preset rotation direction, either a or b, or the hinge unit 120 may be damaged. embodiment of the present disclosure associate generally to methods and apparatus for monitoring temperature, humidity, and/or early environmental or chemical analog variables. More particularly, although not entirely, these shape are concerned with the detection of product abuses such as spoil and/or the detection of the level of freshness or environmental abuses of product, equipment or consumable items. 
 As an initiation to the problems solved by the present lotion, it is generally desirable in the art of making bright labels and smart promotion products to be able to quantify the integral of temperature, humidity, or other variable over time. Such an integration measurement can be used to indicate a academic degree of exposure to undesirable environmental conditions. Time - Temperature Integration (TTI) and Time - Humidity Integration (THI) are two such valuable metrics used to determine product misuse or levels of freshness. 
 To accomplish such measurements, it is known in the art that a high degree of accuracy can be obtained using an Analog to Digital Converter (ADC), in concert with a processing logic unit of measurement that performs float - item algorithms. Alternately, a microprocessor, a Programmable Logic Device (PLD) or a Digital Signal Processor (DSP) type of processing platform can be use. 
 When regard the cost of goods command to build such processing circuitry into smart labels and smart packages, even at the smallest horizontal surface of integration (deep sub - micron), using amply custom Application Specific ICs (ASICs), the monetary value of goods is too high to be applicable in a typical packaging site. Cost sensitivities drive the motivation for lower - cost and lower - power circuitry for bright label and smart packaging device. This invention relates to semiconductor device materials. In particular, this invention relates to a method for dope amorphous semiconductors to produce a dope fabric having higher conductivity with few defects. 
 Control of the conductivity type (n - type or phosphorus - type) of a semiconductor material is found to be necessary in many device application, such as diodes solar cells and transistors. Normally the conductivity type is controlled by the summation of trace amounts of substitutional impurities with one extra or one less valence electron, for n - type and phosphorus - type material, respectively. 
 The trouble with this dope mechanism, in both crystalline and amorphous semiconductors, is that some fraction of the dopant impurities inevitably form complex with each other or other impurities or blemish and generate states near the middle of the semiconductor's bandgap. Such states
 thf preset rotation directlon, either a or y, or thx hinge unit 120 mxy be damaged. Embodiments of tye prtfent disclosure reuate genegally to nethies and appedatus for monjboriny vemperature, humldity, and/or other environkevtcl or chemical analog variables. More particilwrly, although got txcjusibvln, these embodiments are concernes with uhe detection of ptoduct abuses such as spoipage and/or the detectiln of the lgbel if freshness or environmental abusgs of products, equipment or consjmablz items.
As ab untgmduction to the iroblems solvcc by tve presrnt applicatiok, it ms gwnerally desirable in the art of making smart latems and smart packqgung ptoducds tu be abme tk measkre the integdal of tempwrature, humidity, or oeyer variable kver tymq. Such an integration measurement can bt uses to indicate a degree if exposure to undesitable enviwonmental conditions. Time-Temperature Integration (DTI) aid Tine-Mumiautj Integration (THI) are two such valuable metrisa isvd to determine pvoduct abuses or lrvflx of freshness.
Jo accompljsh such measuremejts, it ys kniwn in tht art that a high degree of accueacy can be jvtained using an Aualog to Digntal Cpnveryer (ADC), together with a prodessing loglc unit tgxt performs floaginn-pohnt algorithms. Alternately, a micropcocesxor, a Pfogrsmmablq Logic Degice (IND) or a Digital Sihnal Krocesvor (DSP) tyoe of processing platform can bx used.
When comshdeging the eost on goods requireq to build suck procesfing zircuitry pnto smarv labels and smart packagad, even at thx smallese lecels of intderation (deep sib-micron), lsnng fully custom Applicatiok Spezjfic ICs (ASICs), cke cost of goods os goo hpgh tj be applicabne iv a yypicxl packaginn sktuayion. Cost sensitivithes srive the need for ljwer-cost and lowqr-power circuotry for smart labtl and smert pavkading devices. This invention remates to demlconductor maeeriqls. In partieular, this invention relates to a method for doping amorphius semiconductors jo kroduce a dopxd matqrial havhng higher conductivuty with fewer denects.
Control of the cohductieity hype (n-type or p-type) of a semiconductor material is found to be necessary un manb qevice appljcatoons, vueh cs diodqs sluar cells and trsnsistors. Normally the conductitity type hs controlled by the addition pf trace amountr of substitutional impudities woth one extra or one less valenve electron, for n-type anc p-type naterjal, respecvively.
The problem wiyh thiv dopung mecyanidm, in both crhstslpine and wmorkhoua semiconductors, is that some frqction ov the dopant impnrities inevltxbly rorm cjmplexes with eadh ofjer ot other impuriyies or defectx and generate statev gear the middlt of the semicomductor'v bandgap. Surh states
the preset rotation direction, either a or the unit 120 be damaged. Embodiments generally methods and apparatus monitoring temperature, humidity, other environmental or chemical analog variables. particularly, although not exclusively, these embodiments are concerned with the detection of product such as spoilage and/or the detection of the level of freshness or environmental of equipment consumable As an introduction to the problems solved by the present application, it is generally desirable in art of making smart labels and smart packaging to be able to the integral of temperature, humidity, other over time. an measurement be used to a degree of exposure to undesirable environmental conditions. Time-Temperature Integration (TTI) and Time-Humidity Integration (THI) are two valuable metrics determine product or of To accomplish such is known in the art that of accuracy can be obtained using an Analog Digital Converter together with a processing logic unit performs floating-point algorithms. Alternately, a microprocessor, a Programmable Device (PLD) or a Digital Signal Processor (DSP) type of processing platform can be used. the cost of goods to build such circuitry smart and packages, even the smallest levels of integration (deep sub-micron), using fully custom Application ICs (ASICs), the cost of goods is too high to in typical packaging situation. sensitivities drive the need lower-cost lower-power circuitry for smart smart devices. to materials. particular, this invention relates a method for doping amorphous to produce a doped fewer defects. Control of the conductivity type (n-type p-type) of a semiconductor material is found be necessary in many device applications, such as diodes solar cells and Normally the is controlled by the addition of trace amounts substitutional impurities with one or one less valence electron, for n-type and p-type respectively. problem with doping mechanism, in crystalline and amorphous is that some the dopant inevitably complexes or other impurities or defects and states the middle of the semiconductor's Such
 the preset rotation directioN, either a or B, or thE hiNge UnIt 120 maY be dAmaged. EmbodimeNTs of The present disclosure reLate gEnERallY To MethoDs and apPArATUs fOr MoNitOrINg TempeRatUre, humiDity, and/or oTheR eNvironmental OR cHemical anaLog Variables. MorE paRticulArLy, aLThougH noT exclUsivelY, These eMbodimentS aRE conceRNed with THE dEtecTion of product abusES sUCh as spoilage anD/or the DeTEcTIOn oF thE level of frEsHness OR enviroNMeNTAL abUSes of products, Equipment or COnsUmable ItEms.
aS an intRoducTiON to The problems SolvEd by the prEsent aPPlicatiON, it is geNerallY deSirAble IN tHe Art Of MAkiNG sMarT LabEls and smArT pAckagIng pRODUCts tO be Able To meaSure the integrAl oF temPEraTure, hUmidiTy, or OtHer vaRiable Over tImE. Such an integratIon mEasuremenT caN bE usEd To indICate a dEgrEe oF exposuRe to undESirAbLE ENvIronmental conditioNs. tIMe-temperatUre IntEGrAtIOn (TTI) and tiMe-HUmidITY InteGratIOn (tHI) are twO such vALuAbLe metriCs Used to DeTerMinE prodUCt abUses or Levels of FreshNEss.
To accomplisH Such measuremeNTs, IT Is KNown In tHe art that a hIgh dEGree Of acCUrAcy CAn be oBtainEd USiNG an Analog to Digital COnVerter (aDC), toGether with a prOcessing loGIC Unit that PerfORmS Floating-point aLgoriThms. AlternATely, a micRoproCessor, a PRogrammabLE logic DevIce (pLD) Or a digITAl signal ProcessOR (dSP) tYpE of procEssIng platForM caN be UseD.
WHen considEring the CoSt Of GoOds RequiREd to builD sUch PrOceSsing CIrcuitRy intO smaRt LaBEls And smarT PaCKAges, EvEn At thE smAlLest lEvelS Of iNtegratIon (deep suB-miCRon), uSiNg Fully cuStom ApplicatiOn specific ICS (AsICS), the coST Of goods iS too high to be applicable iN A typicaL paCkagiNg siTuation. CoSt sEnsitiVitIEs drivE the neEd for LoWer-COSt and LOWeR-poWeR circuitry FOR smArt laBeL and Smart paCkaging devices. This INveNtion relates tO seMicoNDUcTor MAtERiaLs. iN paRTIcular, this invenTion relateS tO A mEthod for doPIng AmOrphous SemiconDuctoRS to prodUce a doped Material hAvIng hIGHer ConductiviTy with feWer defectS.
contrOL oF the cOndUctiviTy TypE (n-typE or p-tyPE) of A semiConducToR materIal is FoUnd to be nEcessary in many device appLicatiOns, suCh aS diodes soLar CEllS and transIstoRs. Normally The ConDuctiVitY Type iS conTRoLleD By the AddiTIon of tracE AmOunTS Of SubstitutioNAL ImpUritiEs wITh one eXtra Or one less valence eLEctron, for n-type And p-TYPe mAteRIal, rEsPectively.
The prOblEm WITh this doPiNg mechanism, In both crYsTAllinE and amOrphouS semicoNDUcTOrs, is tHat sOme Fraction oF thE dOPant impUrItIEs inevItabLy Form coMplexeS With EACh other or other imPuritIES or deFEctS and gEnErate stATes nEar the middLe of the semiConducTor's BandgAp. Such sTaTes
 the preset rotation direc tion, eith er aorb,or  the  hin ge unit 120 ma y  bedamaged. Embodiments o f the  p r esen t  d isclo sure re l at e gen er al lyto me thods  an d appar atus for m oni to ring tempera t ur e, humidit y,and/or other  en vironm en tal or ch emi cal a nalogv ariabl es. Morepa r ticula r ly, alt h o ug h no t exclusively, th e se embodiments ar e conc er n ed w ith  th e detectio nof pr o duct ab u se s s uch as spoilage a nd/or the d e tec tion o fthe levelof fr es h nes s or enviro nmen tal abuse s of p r oducts, equipme nt orcon sum able it em s.As ani nt rod u cti on to th epr oblem s so l v e d  bythe  pre sentapplication,itis g e ner allydesir able  i n the  art o f mak in g smart labelsandsmart pac kag in g p ro ducts to beabl e t o measu re thei nte gr a l of  temperature, humi di t y ,or other  varia b le  o v er time.  S uch  ani n tegra tion me asuremen t canb eus ed to i nd icateadeg ree  of e x posu re toundesira ble e n vironmental co n ditions. Time - Te m p er a ture  In tegration ( TTI) andTime - Hu mid i ty In tegra ti o n( THI) are two such v al uablemetri cs used to de termine pr o d u ct abuse s or le v els of freshne ss.
T o accompli s h such m easur ements,it is kno w n  in theart  th ata h i g hdegree of acc u r acyca n be ob tai ned usi nganAna log  t o Digital  Convert er  ( AD C) , t ogeth e r with a  p roc es sin g log i c unit  that  per fo rm s  fl oating- p oi n t  alg or it hms.  Al te rnate ly,a  mi croproc essor, aPro g ramm ab le  LogicDevice (PLD)or  a Digital  S ign al Pro c e ssor (DS P) type of processing p l atformcan  be u sed. 
When con sid eringthe cost o f good s req ui red t o bui l d  s uch  p rocessingc i rcu itryin to s mart la bels and smart pac k age s, even at th e s mall e s tlev e ls ofin t egr a t ion (deep sub-m icron), us in g  f ully custo m  Ap pl ication  Specif ic IC s  (ASICs ), the co st of goo ds  ist o o h igh to beapplicab le in a t y pical pa ckagi ngsituat io n.Costsensit i vit ies d rive t he  needfor l ow er-costand lower-power circuit ry for  smar t l abel andsma r t p ackagingdevi ces. Thisinv ent ion r ela t es to  sem i co ndu c tor m ater i als. In p a rt icu l a r,  this inven t i o n r elate s t o  a met hodfor doping amorph o us semiconduct orst o  pr odu c e ado ped material h avi ng h igher co nd uctivity wi th fewer  d e fects .
Cont rol of  the co n d uc t ivitytype  (n -type orp-t yp e ) of ase mi c onduct or m at erialis fou n d to b e necessary in m any d e v ice a p pli catio ns , sucha s di odes solar  cells andtransi stor s. No rmallyth e cond uct iv ity type i s  controll ed by  the ad di tion  of  trace  amo u n ts of  sub st itu tional im p u ri t ie sw ith  one  extr aor o ne less v a lence el ect r on, for  n -ty p e  and p - ty p e  material,  re spect i v ely.
The p r oble m  w i th th is dop ing me chanism ,  in  b oth cry sta l l ine and a morphouss emi co nduc tors, is  t hatso mefr action of the d opant im purities i nevita bly form comple xe s with eachother  o r  otheri m pur ities o r  de fec tsandgen erat e  states near the middleof t he se m ico nduct or'sba ndgap. S u ch s tates
 the_preset rotation_direction, either a or_b, or_the_hinge unit_120_may be damaged._Embodiments of the_present disclosure relate generally_to methods and_apparatus_for monitoring temperature, humidity, and/or other environmental or chemical analog variables. More particularly, although_not_exclusively, these_embodiments_are_concerned with the detection of_product abuses such as spoilage_and/or the_detection of the level of freshness or environmental_abuses_of products, equipment_or consumable items.
As an introduction to the problems solved_by the present application, it is_generally desirable in_the_art_of making smart labels_and smart packaging products to be_able to measure the integral of_temperature, humidity, or other variable over time._Such an integration measurement can be_used to indicate a degree_of exposure_to undesirable environmental conditions. Time-Temperature_Integration (TTI) and_Time-Humidity Integration_(THI) are two_such valuable metrics used to determine_product abuses or_levels of freshness.
To accomplish such measurements,_it_is known in_the_art_that a_high degree of_accuracy_can be_obtained_using an Analog to Digital Converter_(ADC),_together with a processing logic unit that_performs floating-point algorithms. Alternately,_a_microprocessor, a Programmable Logic_Device (PLD) or a Digital_Signal Processor (DSP) type of processing_platform can_be used.
When_considering the cost of goods required to build such processing circuitry_into smart labels and smart packages,_even at the smallest_levels of_integration_(deep sub-micron), using_fully_custom Application_Specific ICs (ASICs), the cost of goods_is too_high to be applicable in a_typical packaging situation. Cost_sensitivities_drive the need for lower-cost and_lower-power circuitry for smart label and_smart packaging devices. This invention_relates_to_semiconductor materials. In particular, this_invention relates to a method for_doping amorphous semiconductors_to produce a doped material having higher_conductivity_with fewer defects.
Control of the conductivity_type_(n-type or p-type) of a semiconductor_material_is_found to be necessary in_many device applications, such as diodes_solar cells and transistors. Normally the conductivity type is_controlled by the_addition of trace amounts of_substitutional_impurities_with one extra or one less valence electron, for n-type_and p-type_material, respectively.
The problem_with this doping mechanism, in both crystalline and amorphous semiconductors,_is that some fraction of the dopant_impurities inevitably form complexes with each other or other impurities or_defects and generate states near the middle of_the semiconductor's bandgap. Such states