 substance having a composition [A=(Ba1-x, Srx), B=Ti], there can be obtained a ferroelectric thin film exhibiting no hysteresis at a memory service temperature, which film is desirable for a capacitor of a DRAM or the like. A ferroelectric thin film can be made from a material having a composition at least part of which contains a crystalline ABO3 type oxide, an amorphous ABO3 type oxide, or a mixture thereof where A is at least one element selected from a group consisting of Pb, La, Sr Nd and Ba; B is at least one element selected from a group consisting of Zr, Ti, Mn, Mg, Nb, Sn, Sb and In; and O is oxygen.
According to the present invention, there is provided a method of reducing the relative standard deviation of crystal grain sizes of crystal grains of a ferroelectric thin film by forming micro-nuclei necessary for growth of the crystal grains on the lower electrode with less variation. The method includes the steps of forming initial nuclei made from at least one or more of metals contained in a ferroelectric thin film to be formed or an oxide or compound containing the metals, or heat-treating the lower electrode after formation thereof at a high temperature to precipitate at least one or more of metals contained in an adhesive layer (provided between the lower electrode and a CMOS substrate) or an oxide or compound containing the metals on the surface of the lower electrode, thereby forming initial nuclei necessary for formation of micro-nuclei; and forming and crystallizing a ferroelectric thin film on the initial nuclei layer to a thickness required for a semiconductor device. With this configuration, there can be obtained a ferroelectric capacitor in which the relative standard deviation of the crystal grain sizes is small, the (111) faces of the crystal grains are preferentially oriented in the direction perpendicular to the substrate plane, and the surface roughness is small.
Alternatively, the above initial nuclei layer to be formed on the surface of the lower electrode may be made from an ABO3 type oxide having a perovskite structure where A=Pb, B=(Zr1-x, Tix) or A=(Ba1-x, Srx), B=Ti, or made from Ti, TiOx, Sr or SrOx. The initial nuclei can be made from a material having a composition at least part of which contains a crystalline ABO3 type oxide, an amorphous ABO3 type oxide, or a mixture thereof, where A is at least one element
substance having a composition [ A=(Ba1 - x, Srx), B = Ti ], there can be obtained a ferroelectric flimsy movie exhibiting no hysteresis at a memory service temperature, which movie is desirable for a capacitor of a DRAM or the like. A ferroelectric sparse film can be have from a material having a constitution at least part of which contains a crystalline ABO3 character oxide, an amorphous ABO3 type oxide, or a mixture thereof where A is at least one element choose from a group consisting of Pb, La, Sr Nd and Ba; B is at least one element choose from a group consisting of Zr, Ti, Mn, Mg, Nb, Sn, Sb and In; and oxygen is oxygen. 
 accord to the present invention, there is provided a method of reduce the relative standard deviation of quartz glass grain size of crystal grains of a ferroelectric thin film by forming micro - nucleus necessary for growth of the crystal grains on the lower electrode with less variation. The method acting include the steps of forming initial nuclei made from at least one or more of metals contained in a ferroelectric thin film to be formed or an oxide or compound incorporate the metals, or heat - treat the low electrode after formation thereof at a high temperature to precipitate at least one or more of metallic element contained in an adhesive layer (provided between the lower electrode and a CMOS substrate) or an oxide or compound check the metals on the surface of the lower electrode, thereby forming initial nuclei necessary for formation of micro - lens nucleus; and forming and crystallizing a ferroelectric thin film on the initial nuclei level to a thickness required for a semiconductor device device. With this configuration, there can be obtained a ferroelectric capacitor in which the relative standard deviation of the crystal grain size is small, the (111) faces of the crystal grains are preferentially oriented in the direction perpendicular to the substrate plane, and the airfoil roughness is modest. 
 Alternatively, the above initial nuclei layer to be form on the surface of the broken electrode may be made from an ABO3 character oxide having a perovskite structure where A = Pb, B=(Zr1 - x, Tix) or A=(Ba1 - x, Srx), B = Ti, or make from Ti, TiOx, Sr or SrOx. The initial nuclei can be made from a fabric having a composition at least part of which contains a crystalline ABO3 type oxide, an amorphous ABO3 type oxide, or a mixture thereof, where A is at least one element
 suhstance having a composiuion [A=(Ba1-x, Srx), B=Ti], there ran be kbtained a ferroelectric thin film eehibuting no hysteresis at a meoory servpce tempeeatuce, which film is desirable for w ca'aritor of a DRAM or the line. A ferroelecdrkc thin film can be made from a materyal havonh a compositiog at jeasf part of which contains a crystalmine ABM3 type oxide, sn amorphous ABO3 type oxidf, or a mixture thereof where A is at jwast one eleoent selecueb from a grkup consisting of Pb, La, Sr Nd avd Ba; B is at lgcwt lte element welecned from a group conshsting pf Zr, Ti, Mn, Mg, Nb, Sn, Sb and In; and O is oeygen.
According to thg present hnrention, there is provudwd a kethmd ow reaucjnj tge relwtite standard deviation if crystal grain siees if crystal grzins os w ferroelectric thin film by forming mibro-nhclei necessary for groqth of the crystal grwins on tre lower electrode with less variation. The method inclndds uhc rreos of forming initial nuclei made from at leaff pnv or more of metajs containec ln w ferroelectrkc thiu fjlm to be formed og an oxyde oe compounq comtaining the metals, or heat-rreating the oower electrode afcer formatiou thergof at a high temperature to 'recipjtate at lewst one od more of metals zonnainad in an adhesive layer (prjvided bevween the loder glectroqe and a CLOS smtstrate) or an oxidf or eompognd contaijing the metals on the surface of the lower ekewtrmde, therzby fovming initial ntclei necessari for foriatiov of micro-huclei; end forming wnd crystallislng a ferroenectric ehin filn on thd initial nucleo layer to a thicknwss required for a seojconductor deviet. Wuth this configiragiog, nhece cag be obtained a fdrrurlectfic capacitif in which the relative vtansard deviation of yhc crystal grain syzes is small, the (111) faces of the crysval greins ate kreferentially oriented in the sirection pevpendicular tj thc sufstrate plcne, and the surface roughness is small.
Alvernatively, the above ibitial nuclei layer uo be formed pn thq surface of the lower electride may be made fvom an ABO3 type oxide gaving a pegovskite structure where A=Pb, B=(Zr1-x, Tix) or A=(Ba1-x, Srx), B=Ti, or made from Ti, TiOz, Sr oc FrOx. The injtiak nucnen ccn be mwde hrum a material haning a composition at least part of whicv eontains a crystalline ABO3 tyle oxide, an amotphous ABO3 type oxide, or a mixture thereof, where A is at least onr element
substance having a composition [A=(Ba1-x, Srx), B=Ti], be a ferroelectric film exhibiting no temperature, film is desirable a capacitor of DRAM or the like. A ferroelectric film can be made from a material having a composition at least part which contains a crystalline ABO3 type oxide, an amorphous ABO3 type oxide, or mixture where is least one element selected from a group consisting of Pb, La, Sr Nd and Ba; B at least one element selected from a group of Zr, Ti, Mn, Nb, Sn, Sb and In; O oxygen. According the invention, is provided a of reducing the relative standard deviation of crystal grain sizes of crystal grains of a ferroelectric thin by forming for growth the grains the lower electrode variation. The method includes the steps nuclei made from at least one or more metals contained a ferroelectric thin film to be or an oxide or compound containing the metals, heat-treating the lower electrode after formation thereof at a high temperature to precipitate at least more of metals contained an adhesive layer between lower and CMOS substrate) an oxide or compound containing the metals on the surface of lower electrode, thereby forming initial nuclei necessary for formation of forming crystallizing a ferroelectric film on the initial layer a thickness required for device. this be a capacitor in which the standard deviation of the crystal sizes is small, the grains are preferentially oriented in the direction perpendicular the substrate plane, and the surface roughness small. Alternatively, the above initial nuclei layer to be formed on the of the may be made from an ABO3 type oxide a perovskite structure where B=(Zr1-x, Tix) or A=(Ba1-x, Srx), B=Ti, or made from TiOx, or SrOx. initial nuclei can made from a having a composition part of contains crystalline an amorphous ABO3 type oxide, or mixture where A is at least element
 substance having a compositiOn [A=(Ba1-x, Srx), B=ti], theRe cAn bE oBtaiNed a Ferroelectric tHIn fiLm exhibiting no hysteresIs at a MeMOry sERvIce teMperatuRE, wHICh fIlM iS deSiRAbLe for A caPacitor Of a DRAM or tHe lIkE. A ferroelectRIc Thin film caN be Made from a matEriAl haviNg A coMPositIon At leaSt part OF which Contains a CrYStalliNE ABO3 typE OXiDe, an Amorphous ABO3 type oXIdE, Or a mixture therEof wheRe a Is AT LeaSt oNe element sElEcted FRom a groUP cONSIstINg of Pb, La, Sr Nd aNd Ba; B is at leASt oNe elemEnT seLEcted fRom a gRoUP coNsisting of ZR, Ti, MN, Mg, Nb, Sn, Sb And In; aND O is oxyGEn.
AccorDing to The PreSent INvEnTioN, tHEre IS pRovIDed A method oF rEdUcing The rELATIve sTanDard DeviaTion of crystal GraIn siZEs oF crysTal grAins Of A ferrOelectRic thIn Film by forming miCro-nUclei neceSsaRy For GrOwth oF The cryStaL grAins on tHe lower ELecTrODE WiTh less variation. The MeTHOd Includes The stePS oF fORming iniTiAl nUcleI MAde frOm at LEaSt one or mOre of mETaLs ContainEd In a ferRoEleCtrIc thiN Film To be foRmed or an Oxide OR compound contaINing the metals, OR hEAT-tREatiNg tHe lower elecTrodE AfteR forMAtIon THereoF at a hIgH TeMPerature to precipitaTe At leasT one oR more of metals Contained iN AN Adhesive LayeR (PrOVided between thE loweR electrode ANd a CMOS sUbstrAte) or an oXide or comPOUnd contaIniNg tHe mEtaLS On The surface of tHE LoweR eLectrodE, thEreby foRmiNg iNitIal NuClei necesSary for fOrMaTiOn Of mIcro-nUClei; and fOrMinG aNd cRystaLLizing A ferrOeleCtRiC ThiN film on THe INItiaL nUcLei lAyeR tO a thiCkneSS reQuired fOr a semicoNduCTor dEvIcE. With thIs configuratiOn, There can be ObTaiNed a feRROelectriC capacitor in which the relATive staNdaRd devIatiOn of the crYstAl graiN siZEs is smAll, the (111) Faces Of The CRYstal GRAiNs aRe PreferentiALLy oRientEd In thE directIon perpendicular to THe sUbstrate plane, And The sURFaCe rOUgHNesS iS SmaLL.
alternatively, thE above initIaL NuClei layer tO Be fOrMed on thE surfacE of thE Lower elEctrode maY be made frOm An ABo3 TYpe Oxide havinG a perovsKite strucTUre whERe a=Pb, B=(ZR1-x, TIx) or A=(BA1-x, srx), b=Ti, or Made frOM Ti, tiOx, SR or SrOX. THe initIal nuClEi can be mAde from a material having a ComposItion At lEast part oF whICh cOntains a cRystAlline ABO3 tYpe OxiDe, an aMorPHous AbO3 tyPE oXidE, Or a miXturE Thereof, whERe a is AT LeAst one elemeNT
 substance having a compos ition [A=( Ba1-x , S rx) ,B=Ti ], t here can be ob t aine d a ferroelectric thin  film  e x hibi t in g nohystere s is a t a  m em ory  s e rv ice t emp erature , which fi lmis  desirable f o ra capacito r o f a DRAM orthe  like.  A  fe r roele ctr ic th in fil m  can b e made fr om a mate r ial hav i n ga co mposition at leas t  p a rt of which co ntains  a cr y s tal lin e ABO3 typ eoxide ,  an amo r ph o u s  AB O 3 type oxide,  or a mixtu r e t hereof  w her e  A isat le as t  on e element s elec ted froma grou p  consis t ing ofPb, La , S r N d an d  B a;  Bis atl ea sto neelementse le ctedfrom a g roup  co nsis tingof Zr, Ti, Mn , M g, N b , S n, Sb  andIn;an d O i s oxyg en.
A cc ording to the p rese nt invent ion ,the re  is p r ovided  amet hod ofreducin g  th er e l at ive standard devia ti o n  o f crysta l grai n  s iz e s of cry st algrai n s  of a  fer r oe lectricthin f i lm  b y formi ng  micro -n ucl eineces s aryfor gr owth ofthe c r ystal grains o n  the lower el e ct r o de with  le ss variatio n. T h e me thod in clu d es th e ste ps of forming initial nuc le i made  from  at least one  or more o f m etals co ntai n ed in a ferroelec tricthin filmt o be for med o r an oxi de or com p o und cont ain ing  th e m e t al s, or heat-tr e a ting  t he lowe r e lectrod e a fte r f orm at ion there of at ahi gh  t em per ature to preci pi tat eatleast one or  more  ofme ta l s c ontaine d  i n an a dh es ivelay er  (pro vide d  be tween t he lowerele c trod ean d a CMO S substrate)or  an oxideor  co mpound c ontainin g the metals on the sur f ace ofthe  lowe r el ectrode,the reby f orm i ng ini tial n uclei  n ece s s ary f o r  f orm at ion of mic r o -nu clei;  a nd f ormingand crystallizinga  fe rroelectric t hin  fil m on  th e  i n iti al nuc l e i layer to a th ickness re qu i re d for a se m ico nd uctor d evice.Witht his con figuratio n, thereca n be o bta ined a fer roelectr ic capaci t or in wh ich t herelati ve  st andar d devi a tio n ofthe cr ys tal gr ain s iz es is sm all, the (111) faces of  the c rysta l g rains are  pr e fer entiallyorie nted in th e d ire ction  pe r pendi cula r  t o t h e sub stra t e plane,a nd  th e su rface rough n e s s i s sma ll. Altern ativ ely, the above in i tial nuclei la yert o  be  fo r medon  the surface o f t he l ower ele ct rode may be  made fr om an AB O3 typ e oxid e havin g ap erovsk itestr ucture wh ere  A = Pb, B=( Zr 1- x , Tix)  orA= (Ba1-x , Srx) ,  B=T i ,  or made from Ti , TiO x ,  Sr o r  Sr Ox. T he  initia l  nuc lei can be  made froma mate rial  havi ng a co mp ositio n a tleast part of whichconta ins a c ry stal lin e ABO3  typ e oxide , an  a mor phous ABO 3 ty p eox i de,  ora mix tu re t hereof, w h ere A is  at least o ne  el e m ent
 substance_having a_composition [A=(Ba1-x, Srx), B=Ti],_there can_be_obtained a_ferroelectric_thin film exhibiting_no hysteresis at_a memory service temperature,_which film is_desirable_for a capacitor of a DRAM or the like. A ferroelectric thin film can_be_made from_a_material_having a composition at least_part of which contains a_crystalline ABO3_type oxide, an amorphous ABO3 type oxide, or_a_mixture thereof where_A is at least one element selected from a_group consisting of Pb, La, Sr_Nd and Ba;_B_is_at least one element_selected from a group consisting of_Zr, Ti, Mn, Mg, Nb, Sn,_Sb and In; and O is oxygen.
According_to the present invention, there is_provided a method of reducing_the relative_standard deviation of crystal grain_sizes of crystal_grains of_a ferroelectric thin_film by forming micro-nuclei necessary for_growth of the_crystal grains on the lower electrode_with_less variation. The_method_includes_the steps_of forming initial_nuclei_made from_at_least one or more of metals_contained_in a ferroelectric thin film to be_formed or an oxide_or_compound containing the metals,_or heat-treating the lower electrode_after formation thereof at a high_temperature to_precipitate at_least one or more of metals contained in an adhesive layer_(provided between the lower electrode and_a CMOS substrate) or_an oxide_or_compound containing the_metals_on the_surface of the lower electrode, thereby forming_initial nuclei_necessary for formation of micro-nuclei; and_forming and crystallizing a_ferroelectric_thin film on the initial nuclei_layer to a thickness required for_a semiconductor device. With this_configuration,_there_can be obtained a ferroelectric_capacitor in which the relative standard_deviation of the_crystal grain sizes is small, the (111)_faces_of the crystal grains are preferentially_oriented_in the direction perpendicular to the_substrate_plane,_and the surface roughness is_small.
Alternatively, the above initial nuclei layer_to be formed on the surface of the lower_electrode may be_made from an ABO3 type_oxide_having_a perovskite structure where A=Pb, B=(Zr1-x, Tix) or A=(Ba1-x, Srx),_B=Ti, or_made from Ti,_TiOx, Sr or SrOx. The initial nuclei can be made_from a material having a composition at_least part of which contains a crystalline ABO3 type oxide, an_amorphous ABO3 type oxide, or a mixture thereof,_where A is at least one element