iniaturization, trench capacitors have often been used in memory cells. For further microminiaturization of semiconductor devices using trench capacitors, the diameter of the trench of each trench capacitor must be reduced.
FIG. 6 is a cross-sectional view of a memory cell region of an existing semiconductor device 300. The semiconductor device 300 includes a monocrystal silicon substrate 10, plate electrode 20, capacitor insulating film 30, collar insulating film 40, first storage node electrode 50, second storage node electrode 52, SiN layer or SiO2 layer 60, buried strap 70, element-isolating/insulating film 80, gate insulating film 90, source/drain diffusion layers 91, 92, gate electrode 93 and insulating residue 99. The storage node electrodes 50, 52 and buried strap 70 are made of doped polysilicon.
The gate insulating film 90, source/drain diffusion layers 91, 92 and gate electrode 93 makeup a MOS transistor Tr. The plate electrode 20, capacitor insulating film 30 and first storage node electrode 50 are formed inside a trench 35 to function as a trench capacitor. Therefore, an electric charge coming through the transistor Tr, SiN or SiO2 layer 60 and the buried strap 70 is stored in the storage node electrode 50. Thus the corresponding data is written. On the other hand, the electric charge is released from the storage node electrode 50 via the SiN or SiO2 layer 60 to the transistor Tr. Thus the data is erased. Writing and erasure of data can be executed in this manner.
However, in case the diameter of the trench 35 e is reduced to enhance the integration density of the semiconductor device 300, an insulating residue 99 is produced. The insulating residue 99 may insulate the first and second storage node electrodes 50, 52 from each other, and may make it impossible to store the charge in the first storage node electrode 50 or release the charge from the first storage node electrode 50. This means that the device fails to write or erase data.
With reference to FIGS. 7A through 7D, the cause of the production of the insulating residue 99 is explained below. FIGS. 7A through 7D are cross-sectional views of the semiconductor device 300 in the order of its manufacturing steps to show the cause of the production of the insulating residue 99. FIGS. 7A through 7D show only the trench capacitor region, omitting the transistor region.
A silicon substrate 10 is processed by a known method to form the trench 35 and the plate electrode 20. The capacitor insulating film 30 is
iniaturization, trench capacitors have often been used in memory cells. For further microminiaturization of semiconductor device device using trench capacitors, the diameter of the trench of each trench capacitor must be reduce. 
 FIG. 6 is a crabbed - sectional view of a memory cell region of an exist semiconductor device 300. The semiconductor device 300 include a monocrystal silicon substrate 10, plate electrode 20, capacitor insulating movie 30, collar insulating film 40, first repositing node electrode 50, second storage node electrode 52, SiN layer or SiO2 layer 60, bury strap 70, element - isolating / insulating movie 80, gate insulating film 90, reference / drain diffusion layer 91, 92, gate electrode 93 and insulating residue 99. The storage node electrodes 50, 52 and buried strap 70 are make of doped polysilicon. 
 The gate insulating film 90, source / drain diffusion layer 91, 92 and gate electrode 93 constitution a MOS transistor Tr. The plate electrode 20, capacitor insulating film 30 and first storage node electrode 50 are formed inside a trench 35 to function as a trench capacitor. consequently, an electric charge issue forth through the transistor Tr, SiN or SiO2 layer 60 and the buried strap 70 is store in the storage node electrode 50. Thus the correspond data is written. On the other hand, the electric accusation is released from the storage node electrode 50 via the SiN or SiO2 layer 60 to the transistor Tr. therefore the data is erased. Writing and erasure of data can be executed in this manner. 
 However, in case the diameter of the trench 35 e is reduce to enhance the integration density of the semiconductor device 300, an insulating residue 99 is produced. The insulating remainder 99 may insulate the first and second storage node electrodes 50, 52 from each other, and may make it impossible to store the charge in the first storage node electrode 50 or publish the charge from the beginning storage node electrode 50. This means that the device fail to write or erase datum. 
 With reference to FIGS. 7A through 7D, the cause of the production of the insulating remainder 99 is explained below. FIGS. 7A through 7D are cross - sectional scene of the semiconductor device 300 in the order of its manufacturing steps to show the cause of the production of the insulating residue 99. FIGS. 7A through 7D show only the trench capacitor area, omitting the transistor region. 
 A silicon substrate 10 is march by a known method to form the trench 35 and the plate electrode 20. The capacitor insulating film 30 is
iniwturization, trench capacltors have often been uved in memory zells. For further microminiavurizatiob of semiconductor devkces usinh trench capecitors, the diamxfer of bke trskch oy xach trench capscitor musd be reduced.
FIC. 6 id a cross-sectional view of a memory cell rrglon of an exisjing xqmicknductor device 300. The semiconductor device 300 includes a konocrystal silicon substrwte 10, plate electrode 20, fapacitor ibsulwring film 30, cullar insulating film 40, first storage node electrode 50, reconb storage nidw epgctrode 52, SiN layeg or SiO2 layev 60, buriad stral 70, element-isolstiig/inwulating film 80, gate iisulating film 90, sourse/drain dhfyusion layers 91, 92, gate wlwctroge 93 dnd kbsuuatjnj rssidue 99. Tie storage hode electrides 50, 52 and buried sura[ 70 are made of doped pjlysilicon.
The gate insulating film 90, sougce/ddain diffusion layers 91, 92 and gate electrode 93 lakeup a IOS transistor Tr. The plate electrode 20, capacitor hnsuletkng fllm 30 qnf first storage node electrode 50 are formed infjdt a trench 35 to fukction as a trench cwpssitor. Therefote, an elecfric charge coming througr the transistjr Tt, SiN or SiO2 layer 60 and the buried strai 70 iw stored in the stlrage node zlectrpde 50. Yhus the corresponding bata ia written. Oj the othsf hand, the electfic cvarge is released from the storage iode zlectrodd 50 voa the SiN or SiL2 laycs 60 to the transistlr Tr. Tvus the daha is erased. Writing and erasurx of data can ba eqecuted iu this manner.
Howevew, in case the biameter of tfe trench 35 e is rxduced to enrance the intahration densmty of thq senicobductor aevice 300, an insilating rvsndue 99 is produced. The insuletine residue 99 may iurooate the first ana sqclnv stowdge node elewtroaes 50, 52 froo each othev, avd msy make it impossibla to store the charge on the firwt storade node electtode 50 or release tje cherge fcom thr fyrst storage node electrode 50. Tgis means thwt the devicq falls jo write or erase data.
With reference to FIGS. 7A thriugh 7D, the cause od the production of uhe insulatinj resique 99 is efplained below. FIGS. 7Q through 7D are cvoss-sectional views of the samicojductor device 300 in the order of its manufacturing steps to show the cause of thx [roduction kf tne invujcting rqsidne 99. FIGS. 7A through 7D show only the trench capacitur regiot, jmitting the transistor regipn.
X silicon subrtrate 10 is processed by z known kethod to form the trench 35 and yhe plate electrode 20. The capacitir inaulating fmlm 30 is
iniaturization, trench capacitors have often been used cells. further microminiaturization semiconductor devices using the of each trench must be reduced. 6 is a cross-sectional view of memory cell region of an existing semiconductor device 300. The semiconductor device 300 a monocrystal silicon substrate 10, plate electrode 20, capacitor insulating film 30, collar film first node 50, second storage node electrode 52, SiN layer or SiO2 layer 60, buried strap 70, element-isolating/insulating 80, gate insulating film 90, source/drain diffusion layers 92, gate electrode 93 insulating residue 99. The storage electrodes 52 and strap are of doped polysilicon. gate insulating film 90, source/drain diffusion layers 91, 92 and gate electrode 93 makeup a MOS transistor The plate capacitor insulating 30 first node electrode 50 inside a trench 35 to function capacitor. Therefore, an electric charge coming through the Tr, SiN SiO2 layer 60 and the buried 70 is stored in the storage node electrode Thus the corresponding data is written. On the other hand, the electric charge is released storage node electrode 50 the SiN or layer to transistor Thus the is erased. Writing and erasure of data can be executed in manner. However, in case the diameter of the trench 35 reduced enhance the integration of the semiconductor device an residue 99 is produced. residue may and storage electrodes 50, 52 from other, and may make it to store the charge electrode 50 or release the charge from the storage node electrode 50. This means that device fails to write or erase data. With reference to FIGS. 7A 7D, the the production of the insulating residue 99 is below. FIGS. 7A through are cross-sectional views of the semiconductor device 300 in order its manufacturing to show the of the production the insulating residue 7A through show the omitting the transistor region. A silicon 10 processed by a known method form 35 and the plate electrode 20. The capacitor insulating film 30 is
iniaturization, trench capacItors have oFten bEen UseD iN memOry cElls. For further MIcroMiniaturization of semicOnducToR DeviCEs Using Trench cAPaCITorS, tHe DiaMeTEr Of the TreNch of eaCh trench caPacItOr must be reduCEd.
fIG. 6 is a crosS-seCtional view oF a mEmory cElL reGIon of An eXistiNg semiCOnductOr device 300. THe SEmiconDUctor deVICe 300 InclUdes a monocrystal sILiCOn substrate 10, plaTe elecTrODe 20, CAPacItoR insulatinG fIlm 30, coLLar insuLAtING FilM 40, First storage nOde electrodE 50, SecOnd stoRaGe nODe elecTrode 52, sin LayEr or SiO2 layeR 60, burIed strap 70, eLement-ISolatinG/InsulatIng filM 80, gaTe iNsulATiNg FilM 90, sOUrcE/DrAin DIffUsion layErS 91, 92, gAte elEctrODE 93 ANd inSulAtinG resiDue 99. The storage NodE eleCTroDes 50, 52 anD buriEd stRaP 70 are mAde of dOped pOlYsilicon.
The gate InsuLating filM 90, soUrCe/dRaIn difFUsion lAyeRs 91, 92 aNd gate eLectrodE 93 MakEuP A moS Transistor Tr. The plaTe ELEcTrode 20, capAcitor INsUlATing film 30 AnD fiRst sTORage nOde eLEcTrode 50 are Formed INsIdE a trencH 35 tO functIoN as A trEnch cAPaciTor. TheRefore, an ElectRIc charge coming THrough the tranSIsTOR TR, siN oR Sio2 layer 60 and thE burIEd stRap 70 iS StOreD In the StoraGe NOdE Electrode 50. Thus the corReSpondiNg datA is written. On tHe other hanD, THE electriC chaRGe IS released from tHe stoRage node elECtrode 50 viA the SIN or SiO2 lAyer 60 to the TRAnsistor tr. THus The DatA IS eRased. Writing aND ErasUrE of data Can Be execuTed In tHis ManNeR.
However, iN case the DiAmEtEr Of tHe treNCh 35 e is redUcEd tO eNhaNce thE IntegrAtion DensItY oF The SemiconDUcTOR devIcE 300, aN insUlaTiNg resIdue 99 IS prOduced. THe insulatIng REsidUe 99 MaY insulaTe the first and SeCond storagE nOde ElectrODEs 50, 52 from eaCh other, and may make it impoSSible to StoRe the CharGe in the fiRst StoragE noDE electRode 50 or ReleaSe The CHArge fROM tHe fIrSt storage nODE elEctroDe 50. this Means thAt the device fails to WRitE or erase data.
WIth RefeRENcE to fiGs. 7a thRoUGh 7D, THE cause of the prodUction of thE iNSuLating resiDUe 99 iS eXplaineD below. FiGS. 7A tHRough 7D aRe cross-seCtional viEwS of tHE SemIconductor Device 300 in The order oF Its maNUfActurIng Steps tO sHow The caUse of tHE prOductIon of tHe InsulaTing rEsIdue 99. FIGS. 7a through 7D show only the treNch capAcitoR reGion, omittIng THe tRansistor RegiOn.
A silicon SubStrAte 10 is ProCEssed By a kNOwN meTHod to Form THe trench 35 aND tHe pLATe Electrode 20. ThE CAPacItor iNsuLAting fIlm 30 iS
iniaturization, trench cap acitors ha ve of ten  be en  use d in  memory cells. Forfurther microminiaturi zatio no f se m ic onduc tor dev i ce s usi ng  t ren ch ca pacit ors , the d iameter of  th etrench of ea c htrench cap aci tor must bered uced.FI G.6  is a  cr oss-s ection a l view  of a mem or y  cellr egion o f an  exi sting semiconduct o rd evice 300. The  semic on d uc t o r d evi ce 300 inc lu des a monocry s ta l s ili c on substrate10, plate e l ect rode 2 0,  ca p acitor  insu la t ing  film 30, c olla r insulat ing fi l m 40, f i rst sto rage n ode  el ectr o de  5 0,se c ond st ora g e n ode elec tr od e 52,  SiN l a y er o r S iO2layer  60, buried s tra p 70 ,  el ement -isol atin g/ insul atingfilm80 , gate insulati ng f ilm 90, s our ce /dr ai n dif f usionlay ers  91, 92 , gatee lec tr o d e  9 3 and insulating r es i d ue  99. The  stora g eno d e electr od es50,5 2  andburi e dstrap 70  are m a de  o f doped  p olysil ic on. 
Th e gat e  ins ulatin g film 9 0, so u rce/drain diff u sion layers 9 1 ,9 2  a n d ga teelectrode 9 3 ma k eupa MO S  t ran s istor  Tr.Th e  p l ate electrode 20, c ap acitor  insu lating film 3 0 and firs t s torage n odee le c trode 50 are f ormed  inside at rench 35  to f unctionas a tren c h  capacit or.  Th ere for e ,  a n electric ch a r ge c om ing thr oug h the t ran sis tor  Tr ,SiN or Si O2 layer  6 0an dthe  buri e d strap70  is  s tor ed in the st orage  nod eel e ctr ode 50. Th u s  the  c or resp ond in g dat a is wri tten. O n the oth erh and,  t he  electr ic charge isre leased fro mthe  stora g e  node el ectrode 50 via the SiNo r SiO2lay er 60  tothe trans ist or Tr.  Th u s thedata i s era se d.W r iting a nd  er as ure of dat a can  be e xe cute d in th is manner.
However ,  in  case the dia met er o f th e t r en c h 3 5e  is r educed to enhan ce the int eg r at ion densit y  of  t he semi conduct or de v ice 300 , an insu lating re si due9 9  is  produced.  The ins ulating r e sidue 99  mayins ulateth e f irstand se c ond  stor age no de  elect rodes  5 0, 52 fr om each other, and maymake i t imp oss ible to s tor e  th e chargein t he first s tor age  node  el e ctrod e 50 or  re l easethec harge fro m  t hef i rs t storage n o d e  el ectro de5 0. Thi s me ans that the devi c e fails to wri te o r era sed ata. 
W ith referencetoFI G S . 7A thr ou gh 7D, thecause of  t h e pro ductio n of t he insu l a ti n g resi due99is explai ned  b e low. FI GS .7 A thro ugh7D  are c ross-s e ctio n a l views of the s emico n d uctor dev ice 3 00  in the orde r of its m anufacturin g step s to  show  the ca us e of t hepr oduction o f  the insu latin g resid ue  99.  FI GS. 7A  thr o u gh 7D  sho wonl y the tre n c hc ap ac i tor  reg ion,om itti ng the tr a nsistorreg i on.
A s il ico n substr a te 1 0 is proce sse d bya known meth o d to fo r m the  trenc h 35 a nd thep lat eelectro de2 0 . The cap acitor in s ula ti ng f ilm 30 i s
iniaturization, trench_capacitors have_often been used in_memory cells._For_further microminiaturization_of_semiconductor devices using_trench capacitors, the_diameter of the trench_of each trench_capacitor_must be reduced.
FIG. 6 is a cross-sectional view of a memory cell region of_an_existing semiconductor_device_300._The semiconductor device 300 includes_a monocrystal silicon substrate 10,_plate electrode_20, capacitor insulating film 30, collar insulating film_40,_first storage node_electrode 50, second storage node electrode 52, SiN layer_or SiO2 layer 60, buried strap_70, element-isolating/insulating film_80,_gate_insulating film 90, source/drain_diffusion layers 91, 92, gate electrode_93 and insulating residue 99. The_storage node electrodes 50, 52 and buried_strap 70 are made of doped_polysilicon.
The gate insulating film 90,_source/drain diffusion_layers 91, 92 and gate_electrode 93 makeup_a MOS_transistor Tr. The_plate electrode 20, capacitor insulating film_30 and first_storage node electrode 50 are formed_inside_a trench 35_to_function_as a_trench capacitor. Therefore,_an_electric charge_coming_through the transistor Tr, SiN or_SiO2_layer 60 and the buried strap 70_is stored in the_storage_node electrode 50. Thus_the corresponding data is written._On the other hand, the electric_charge is_released from_the storage node electrode 50 via the SiN or SiO2 layer_60 to the transistor Tr. Thus_the data is erased._Writing and_erasure_of data can_be_executed in_this manner.
However, in case the diameter of_the trench_35 e is reduced to enhance_the integration density of_the_semiconductor device 300, an insulating residue_99 is produced. The insulating residue_99 may insulate the first_and_second_storage node electrodes 50, 52_from each other, and may make_it impossible to_store the charge in the first storage_node_electrode 50 or release the charge_from_the first storage node electrode 50._This_means_that the device fails to_write or erase data.
With reference to_FIGS. 7A through 7D, the cause of the production_of the insulating_residue 99 is explained below._FIGS._7A_through 7D are cross-sectional views of the semiconductor device 300_in the_order of its_manufacturing steps to show the cause of the production of_the insulating residue 99. FIGS. 7A through_7D show only the trench capacitor region, omitting the transistor region.
A_silicon substrate 10 is processed by a known_method to form the trench 35 and_the plate electrode 20._The_capacitor insulating film 30 is