BS deposition process include: (1) the deposition process is very slow; (2) it is more of a laboratory technique than a production process; (3) there are few IBS installations in existence, typically remnants from the telecom bubble, and these have only one or two machines operated by a small staff; (4) substrate capacity is quite limited; (5) deposition uniformity over the substrate can become a limitation, which in turn affects product quality and results in a high discard rate; (6) as the target is eroded the uniformity of the film being deposited changes, thus resulting in further quality problems and frequent target change-outs with associated down-time and costs; and (7) the bombardment energy is quite high which in turn leads to disassociation of the deposited materials and hence absorption.
Plasma Ion Assisted Deposition (PIAD) is similar to the IAD process above, except momentum is transferred to the depositing film via a low voltage, high current density plasma. Typical bias voltages are in the range 90-160 v and current densities in the range of milli-amps/cm2. While PIAD instruments are common in the precision optics industry and have been used to deposit films, there are some problems with the PIAD method, particularly in regard to the homogeneity of the deposited film. PIAD deposition has been described in U.S. Pat. No. 7,465,681 in the name of G. Hart, R. Maier and Jue Wang as inventors.
The below 200 nm lasers, also known as deep ultraviolet or “DUV” lasers, have been extensively used in advanced optical lithography to mass-produce patterned silicon wafers for use in semiconductor manufacturing. As the semiconductor process progresses from the 65 nm node to the 45 nm node and beyond, “at wavelength” optical inspection is required for increased resolution. The “at wavelength” optical metrology demands more performance from optical components used in connection with the inspection systems, for example, wide-angle high reflective mirrors for both p-polarization and s-polarization with angles of incidence ranging from 40° to 50° at the wavelength of 193 nm. The wide-angle highly reflective mirrors may also be required in the other areas where an ArF excimer laser is being used, for example as in medical surgery, ultra-precision machining and measurement, large-scale integrated electronic devices, and components for communications.
Generally, at least one high refractive index and one low refractive index material are required for
BS deposition process include: (1) the deposit procedure is very slow; (2) it is more of a laboratory proficiency than a production summons; (3) there are few IBS installations in being, typically remnants from the telecom bubble, and these suffer only one or two machines manoeuver by a small staff; (4) substrate capacity is quite circumscribed; (5) deposition uniformity over the substrate can become a limitation, which in turn affects product quality and results in a eminent discard rate; (6) as the target is eroded the uniformity of the movie being deposited changes, therefore resulting in further timbre problems and frequent target change - outs with associated down - time and price; and (7) the bombardment energy is quite high which in turn leads to disassociation of the deposited materials and hence absorption. 
 Plasma Ion Assisted Deposition (PIAD) is similar to the IAD process above, except momentum is transferred to the depositing film via a low voltage, eminent current density plasma. Typical diagonal voltage are in the stove 90 - 160 v and current densities in the compass of milli - amps / cm2. While PIAD instruments are common in the precision optics diligence and have been used to deposit films, there are some problems with the PIAD method, particularly in regard to the homogeneity of the deposited film. PIAD deposition has been described in U.S. Pat. nobelium. 7,465,681 in the name of G. Hart, R. Maier and Jue Wang as inventors. 
 The below 200 nm laser, also known as deep ultraviolet or “ DUV ” lasers, have been extensively used in advanced ocular lithography to mass - produce patterned silicon wafers for habit in semiconductor manufacturing. As the semiconductor process advance from the 65 nm node to the 45 nm node and beyond, “ at wavelength ” optical inspection is necessitate for increased resolving power. The “ at wavelength ” optical metrology demand more performance from ocular components used in connection with the inspection systems, for example, across-the-board - angle gamey reflective mirrors for both p - polarization and s - polarization with angles of incidence range from 40 ° to 50 ° at the wavelength of 193 nm. The wide - slant highly reflective mirrors may also be required in the other areas where an ArF excimer laser is being used, for exercise as in medical surgery, ultra - precision machining and measurement, large - scale integrated electronic device, and component for communication. 
 Generally, at least one high refractive index and one low refractive exponent material are required for
BS feposition process incluae: (1) the depositnin proress is very sluw; (2) it is more of a laboratocy twchniwue than a production orocess; (3) nhere are few UBS installations lu exiabence, vypically remnakts from tha telecom bubbne, aud these have only one or two machinqs operstfd by a small ftafg; (4) sugstrate capacity is quite limited; (5) deposiuion uniformity ovrr the substrate can becomf a pimitation, which ij turn affexts [eoduct qualigy and reslnts in a hjgh discard rate; (6) as the target is exoded the ubidorlhty of the hilm bving deposited changev, thus tesulting in fmrthec quqlity problems and frxquent target change-juts with aasociated down-timw qnd cmsts; and (7) thd bkmuarsment fnecgy is quits high whicy in turn leads to cifqssociation or the qe[osited materials and hence absorption.
Pnasja Ion Assisted Deposituon (PIAD) is similar tl the IAD process above, except momentum is transferred to dhe dxpusiuikn fiun gia a low voltage, high current density plasma. Fykicsl bias voltagcs are in the rangr 90-160 v wnd current dgnsities ih the range of milpi-amps/ci2. Whioe PIAD igstriments are common in the prwcision optibs ibdustry and have bzen used to beposij filmx, there are some probleos wjth the PIAF method, lxrticularly in rdgagd tm the homogeneity of the dqposited hilm. 'IAD depusitoon haf been desfribed in U.S. Pat. No. 7,465,681 in hhe ncme ox G. Hart, R. Maier and Jue Wang as inventors.
The below 200 nm ldsegs, also kuown ax deep ultravyolet or “DUV” lcsers, hare beev extensivvly used mn advanced jptical lithoctaphy to mass-'roduce pwtteened silicov wafers for usr in semibouductor mqnufacturing. As thc semkdonductor procews krigresses from yhe 65 ni jove to dhe 45 nm node and behpnd, “ag waveltugtm” ooticsl inspection is reqgires for increased rexojution. Tye “at wadelength” optival metrology demajds mmre perfprmwnce from optical components uaed in cojnegtion with thq inwpection syscems, for example, wide-angle high reflectite mirrors for both p-pooarization and s-polcrlzation with anglqs of inchdence ranging from 40° to 50° at the waveltngth of 193 nm. The wide-anfle hichly geflective mirrors may also be required in the other areas where an ArF ezcimer laser is bejng ised, xox erample ws ii oedical surgery, lltra-precision machining and mearurement, lcrge-scale integrated electronoc devices, and zomponents for communicafions.
Genrrally, at least one high refracyive index and one low rcfractive indes mategjau are required for
BS deposition process include: (1) the deposition very (2) it more of a process; there are few installations in existence, remnants from the telecom bubble, and have only one or two machines operated by a small staff; (4) substrate is quite limited; (5) deposition uniformity over the substrate can become a limitation, in affects quality results in a high discard rate; (6) as the target is eroded the uniformity of the being deposited changes, thus resulting in further quality and frequent target change-outs associated down-time and costs; and the energy is high in leads to disassociation the deposited materials and hence absorption. Plasma Ion Assisted Deposition (PIAD) is similar to the IAD process except momentum to the film a voltage, high current Typical bias voltages are in the and current densities in the range of milli-amps/cm2. PIAD instruments common in the precision optics industry have been used to deposit films, there are problems with the PIAD method, particularly in regard to the homogeneity of the deposited film. has been described in Pat. No. 7,465,681 the of Hart, Maier and Wang as inventors. The below 200 nm lasers, also known as ultraviolet or “DUV” lasers, have been extensively used in advanced to patterned silicon wafers use in semiconductor manufacturing. the process progresses from the node the and “at optical inspection is required increased resolution. The “at wavelength” metrology demands more performance connection with the inspection systems, for example, wide-angle reflective mirrors for both p-polarization and s-polarization angles of incidence ranging from 40° to 50° at the wavelength of nm. The reflective mirrors may also be required in the areas where an ArF laser is being used, for example as in medical ultra-precision and measurement, integrated electronic devices, components for communications. at least one index and low index for
BS deposition process includE: (1) the deposiTion pRocEss Is Very Slow; (2) It is more of a labORatoRy technique than a producTion pRoCEss; (3) tHErE are fEw IBS inSTaLLAtiOnS iN exIsTEnCe, typIcaLly remnAnts from thE teLeCom bubble, and THeSe have only One Or two machineS opErated By A smALl staFf; (4) sUbstrAte capACity is Quite limiTeD; (5) DeposiTIon unifORMiTy ovEr the substrate can BEcOMe a limitation, wHich in TuRN aFFEctS prOduct qualiTy And reSUlts in a HIgH DIScaRD rate; (6) as the tarGet is eroded THe uNiformItY of THe film Being DePOsiTed changes, tHus rEsulting iN furthER qualitY ProblemS and frEquEnt TargET cHaNge-OuTS wiTH aSsoCIatEd down-tiMe AnD costS; and (7) THE BOmbaRdmEnt eNergy Is quite high whIch In tuRN leAds to DisasSociAtIon of The depOsiteD mAterials and hencE absOrption.
PlAsmA IOn ASsIsted dEpositIon (pIAd) is simiLar to thE iAD PrOCESs Above, except momentuM iS TRaNsferred To the dEPoSiTIng film vIa A loW volTAGe, higH curREnT density Plasma. tYpIcAl bias vOlTages aRe In tHe rAnge 90-160 v ANd cuRrent dEnsities In the RAnge of milli-ampS/Cm2. While PIAD inSTrUMEnTS are ComMon in the preCisiON optIcs iNDuStrY And haVe beeN uSEd TO deposit films, there aRe Some prOblemS with the PIAD mEthod, partiCULArly in reGard TO tHE homogeneity of The dePosited filM. pIAD depoSitioN has been Described IN u.S. Pat. No. 7,465,681 iN thE naMe oF G. HART, R. maier and Jue WaNG As inVeNtors.
ThE beLow 200 nm laSerS, alSo kNowN aS deep ultrAviolet oR “DuV” LaSeRs, hAve beEN extensiVeLy uSeD in AdvanCEd optiCal liThogRaPhY To mAss-prodUCe PATterNeD sIlicOn wAfErs foR use IN seMiconduCtor manufActURing. as ThE semicoNductor procesS pRogresses fRoM thE 65 nm nodE TO the 45 nm noDe and beyond, “at wavelength” OPtical iNspEctioN is rEquired foR inCreaseD reSOlutioN. The “at WavelEnGth” OPTical METrOloGy Demands morE PErfOrmanCe From Optical Components used in coNNecTion with the inSpeCtioN SYsTemS, FoR ExaMpLE, wiDE-Angle high reflecTive mirrorS fOR bOth p-polariZAtiOn And s-polArizatiOn witH Angles oF incidencE ranging fRoM 40° to 50° aT THe wAvelength oF 193 nm. The wiDe-angle hiGHly reFLeCtive MirRors maY aLso Be reqUired iN The Other Areas wHeRe an Arf exciMeR laser is Being used, for example as in MedicaL surgEry, Ultra-precIsiON maChining anD meaSurement, laRge-ScaLe intEgrATed elEctrONiC deVIces, aNd coMPonents foR CoMmuNICaTions.
GeneraLLY, At lEast oNe hIGh refrActiVe index and one low rEFractive index mAterIAL arE reQUireD fOr
BS deposition process incl ude: (1) t he de pos iti on  pro cess  is very slow; (2)it is more of a labora toryte c hniq u ethana produ c ti o n  pr oc es s;(3 )  t hereare  few IB S installa tio ns  in existenc e ,typicallyrem nants from t heteleco mbub b le, a ndthese  haveo nly on e or twoma c hineso perated b ya sm all staff; (4) su b st r ate capacity i s quit el im i t ed;  (5 ) depositi on  unif o rmity o v er t h e s u bstrate can b ecome a lim i tat ion, w hi chi n turn  affe ct s  pr oduct quali ty a nd result s in a high di s card ra te; (6 ) a s t he t a rg et  is  e r ode d  t heu nif ormity o fth e fil m be i n g depo sit ed c hange s, thus resul tin g in fur therquali ty p ro blems  and f reque nt  target change- outs  with ass oci at eddo wn-ti m e andcos ts;  and (7 ) the b o mba rd m e n tenergy is quite hi gh w hi ch in tu rn lea d sto disassoc ia tio n of t he de posi t ed  materia ls and he nc e absor pt ion.
P la sma  Io n Ass i sted  Depos ition (P IAD)i s similar to t h e IAD process ab o v e, exce ptmomentum is  tra n sfer redt othe depos iting  f i lm via a low voltage,hi gh cur rentdensity plasm a. Typical b i as volta gesa re in the range 9 0-160  v and cur r ent dens ities  in therange ofm i lli-amps /cm 2.Whi leP I AD  instrumentsa r e co mm on in t heprecisi onopt ics  in du stry andhave bee nus ed  t o d eposi t  films,th ere  a resomep roblem s wit h th ePI A D m ethod,p ar t i cula rl yin r ega rd  to t he h o mog eneityof the de pos i tedfi lm . PIADdeposition ha sbeen descr ib edin U.S . Pat. No.  7,465,681 in the nameo f G. Ha rt,  R. M aier  and JueWan g as i nve n tors.The be low 2 00  nm l asers , al sokn own as dee p ult ravio le t or  “DUV”lasers, have beene xte nsively usedinadva n c ed  op t ic a l l it h ogr a p hy to mass-prod uce patter ne d  s ilicon waf e rsfo r use i n semic onduc t or manu facturing . As these mico n d uct or process  progres ses fromt he 65 nm  node  to  the 4 5nmnodeand be y ond , “at  wavel en gth” o ptica linspecti on is required for incr easedresol uti on. The “ atw ave length” o ptic al metrolo gydem andsmor e  perf orma n ce  fr o m opt ical component s  u sed i nconnectionw i t h t he in spe c tion s yste ms, for example,w ide-angle high  ref l e cti vem irro rs  for both p-po lar iz a t ion ands- polarizatio n with a ng l es of  incid ence r angingf r om 40° to  50°  at  the wave len gt h  of 193  n m. The wi de-a ng le hig hly re f lect i v e mirrors may al so be r equir e d i n the  o ther ar e as w here an Ar F excimer l aser i s be ing u sed, fo rexampl e a sin medical surgery,ultra -precis io n ma chi ning a nd m e a surem ent,  l arg e-scale i n t eg r at ed ele ctro nic d ev ices , and com p onents f orc ommunic at ion s . 
Gener a ll y ,  at leastone  high r efractivei ndex an d  onelow re fracti ve inde x  ma te rial ar e r e q uired for 
BS deposition_process include:_(1) the deposition process_is very_slow;_(2) it_is_more of a_laboratory technique than_a production process; (3)_there are few_IBS_installations in existence, typically remnants from the telecom bubble, and these have only one_or_two machines_operated_by_a small staff; (4) substrate_capacity is quite limited; (5)_deposition uniformity_over the substrate can become a limitation, which_in_turn affects product_quality and results in a high discard rate; (6)_as the target is eroded the_uniformity of the_film_being_deposited changes, thus resulting_in further quality problems and frequent_target change-outs with associated down-time and_costs; and (7) the bombardment energy is_quite high which in turn leads_to disassociation of the deposited_materials and_hence absorption.
Plasma Ion Assisted Deposition_(PIAD) is similar_to the_IAD process above,_except momentum is transferred to the_depositing film via_a low voltage, high current density_plasma._Typical bias voltages_are_in_the range_90-160 v and_current_densities in_the_range of milli-amps/cm2. While PIAD instruments_are_common in the precision optics industry and_have been used to_deposit_films, there are some_problems with the PIAD method,_particularly in regard to the homogeneity_of the_deposited film._PIAD deposition has been described in U.S. Pat. No. 7,465,681 in_the name of G. Hart, R._Maier and Jue Wang_as inventors.
The_below_200 nm lasers,_also_known as_deep ultraviolet or “DUV” lasers, have been_extensively used_in advanced optical lithography to mass-produce_patterned silicon wafers for_use_in semiconductor manufacturing. As the semiconductor_process progresses from the 65 nm_node to the 45 nm_node_and_beyond, “at wavelength” optical inspection_is required for increased resolution. The_“at wavelength” optical_metrology demands more performance from optical components_used_in connection with the inspection systems,_for_example, wide-angle high reflective mirrors for_both_p-polarization_and s-polarization with angles of_incidence ranging from 40° to 50°_at the wavelength of 193 nm. The wide-angle highly_reflective mirrors may_also be required in the_other_areas_where an ArF excimer laser is being used, for example_as in_medical surgery, ultra-precision_machining and measurement, large-scale integrated electronic devices, and components for_communications.
Generally, at least one high refractive index_and one low refractive index material are required for