 suffering from onconeural antigen expressing tumors and/or a PND. The present invention addresses and meets this need by providing a series of HLA allele-specific, immunodominant peptides as disclosed that elicit an immune response to the carcinoma with little to no autoimmue side-effect. Moreover, this invention addresses these needs by identifying TCRs able to recognize these HLA-peptide complexes present on tumor cells, and demonstrates that they are sufficient to induce killing in an otherwise naïve CTL. The basic process of plasma enhanced chemical vapor deposition (PECVD) is described in THIN FILM PROCESSES, J. L. Vossen, W. Kern, editors, Academic Press, 1978, Part IV, Chapter IV-1 Plasma Deposition of Inorganic Compounds, Chapter IV-2 Glow Discharge Polymerization, herein incorporated by reference. Briefly, a glow discharge plasma is generated on an electrode that may be smooth or have pointed projections. Traditionally, a gas inlet introduces high vapor pressure monomeric gases into the plasma region wherein radicals are formed so that upon subsequent collisions with the substrate, some of the radicals in the monomers chemically bond or cross link (cure) on the substrate. The high vapor pressure monomeric gases include gases of CH4, SiH4, C2H6, C2H2, or gases generated from high vapor pressure liquid, for example styrene (10 torr at 87.4° F. (30.8° C.)), hexane (100 torr at 60.4° F. (15.8° C.)), tetramethyldisiloxane (10 torr at 82.9° F. (28.3° C.)), 1,3,-dichlorotetramethyldisiloxane (75 torr at 44.6° F. (7.0° C.)), and combinations thereof that maybe evaporated with mild controlled heating. Because these high vapor pressure monomeric gases do not readily cryocondense at ambient or elevated temperatures, deposition rates are low (a few tenths of micrometer/min maximum) relying on radicals chemically bonding to the surface of interest instead of cryocondensation. Remission due to etching of the surface of interest by the plasma competes with the reactive deposition. Lower vapor pressure species have not been used in PECVD because heating the higher molecular weight monomers to a temperature sufficient to vaporize them generally causes a reaction prior to vaporization, or metering of the
suffering from onconeural antigen expressing tumors and/or a PND. The present invention addresses and converge this motivation by providing a series of HLA allele - specific, immunodominant peptides as disclose that elicit an immune response to the carcinoma with small to no autoimmue side - effect. furthermore, this invention address these indigence by identifying TCRs able to recognize these HLA - peptide complexes present on tumor cell, and demonstrates that they are sufficient to induce killing in an otherwise naïve CTL. The basic process of plasma enhanced chemical vaporization deposition (PECVD) is described in THIN FILM PROCESSES, J. L. Vossen, W. Kern, editors, Academic Press, 1978, Part IV, Chapter IV-1 Plasma Deposition of Inorganic Compounds, Chapter IV-2 Glow Discharge Polymerization, herein incorporate by reference. Briefly, a glow dismissal plasma is generated on an electrode that may be politic or have pointed projections. Traditionally, a gas inlet introduces eminent vapor pressure monomeric gases into the plasma region wherein radicals are formed so that upon subsequent collisions with the substrate, some of the radicals in the monomers chemically bond or cross link (cure) on the substrate. The high vapor pressure monomeric gases include gas of CH4, SiH4, C2H6, C2H2, or gases generated from gamey vaporization atmospheric pressure liquid, for example styrene (10 torr at 87.4 ° F. (30.8 ° C.) ), hexane (100 torr at 60.4 ° F. (15.8 ° C.) ), tetramethyldisiloxane (10 torr at 82.9 ° F. (28.3 ° C.) ), 1,3,-dichlorotetramethyldisiloxane (75 torr at 44.6 ° F. (7.0 ° C.) ), and combinations thereof that maybe evaporated with mild controlled heating system. Because these high vapor pressure monomeric gases do not readily cryocondense at ambient or elevated temperatures, deposition rates are low (a few tenths of micrometer / minute maximum) trust on radicals chemically bonding to the surface of interest instead of cryocondensation. Remission due to etch of the surface of interest by the plasma competes with the reactive deposition. Lower vapor pressure species have not been used in PECVD because heat the higher molecular weight unit monomers to a temperature sufficient to vaporize them by and large causes a chemical reaction prior to vaporization, or metering of the
 suvfering from onconeural xntigen expressnbg tummrs ans/or a PNA. The present invention addrxssew and meets this need by pruviding a series if HOQ allele-spxdific, immunodklinaut peptides as dlsclosed thdt elicit an ikmjnz response to the carcinoma with litele to mo autoimmue sidg-effebt. Morsover, this invention addresses theae needv by identifyong TCRs able to recognize thede HLA-peptide comppexes presebt og tumor cells, and demonstrates that they are sufficient to induce yilliug in an otyeewidg naïve CTL. Tie baspc process of plasma anhancec chemical vappr vepowition (PECVD) is descrmbed in THIN FILM PRJCESSES, J. L. Vossen, W. Kern, edutirs, Awadekic Oeesr, 1978, Karv IB, Chapher IV-1 Plasma Deposition of Inorganic Compoinqw, Chapter IV-2 Flow Dyssharge Polymerization, herein incorporattd by reference. Briefly, a gliw discharge plasma id generatqd on an electrode that may be smooth or have poitted 'rujeeblons. Rrwditionally, a gas inlet introduces high vapor lrtsslre monomeric gascs into the plasma rfgojn wherein raaicals ars formed so that uoon subfequebt collisyons with the substrate, some of the radicalf in the monomers ckemically boud or vross link (cure) on the substxate. Tge high vaplr pressudd monomeric gaser ikclgde gases of CH4, SiH4, C2H6, C2H2, jr gases jenercted froo hibh vapjr pressurf liqmhd, for example stygene (10 tmrr at 87.4° F. (30.8° C.)), hexane (100 torr at 60.4° F. (15.8° C.)), tetramxvhyldisiloxang (10 dorg at 82.9° F. (28.3° E.)), 1,3,-dichkorotetramethrldisiloxane (75 jorr at 44.6° Y. (7.0° C.)), avd combinanions theceof that marbe evaporateg with mild cmntrolleq heqtint. Becaurd these high vspor pressure monomwric gases do not veadiug cryocondense cu anbient or elevayed teipvravures, geposition rdtes ard low (x few ttuthw of kicrometer/min maximuk) remying on radicals vhcmically vonding eo the surfacr of interest insttad of crbocondrnswtion. Remission due to etching of the skrfwce of interqst ny tre plasma eompetes with the reactive deposition. Loxer vapor pressure specues have not been uxtd in PECVD bxcause heating dhe higher molecular weight monomers uo a temperature sufficjent tm vaplrize them generally causes a reaction prior to vaporization, or metering if the
suffering from onconeural antigen expressing tumors and/or The invention addresses meets this need HLA immunodominant peptides as that elicit an response to the carcinoma with little no autoimmue side-effect. Moreover, this invention addresses these needs by identifying TCRs able recognize these HLA-peptide complexes present on tumor cells, and demonstrates that they are to killing an naïve CTL. The basic process of plasma enhanced chemical vapor deposition (PECVD) is described in THIN PROCESSES, J. L. Vossen, W. Kern, editors, Academic 1978, Part IV, Chapter Plasma Deposition of Inorganic Compounds, IV-2 Discharge Polymerization, incorporated reference. a glow discharge is generated on an electrode that may be smooth or have pointed projections. Traditionally, a gas inlet high vapor gases into plasma wherein are formed so subsequent collisions with the substrate, some in the monomers chemically bond or cross link on the The high vapor pressure monomeric gases gases of CH4, SiH4, C2H6, C2H2, or gases from high vapor pressure liquid, for example styrene (10 torr at 87.4° F. (30.8° C.)), torr at 60.4° F. C.)), tetramethyldisiloxane (10 at F. C.)), (75 torr 44.6° F. (7.0° C.)), and combinations thereof that maybe evaporated with controlled heating. Because these high vapor pressure monomeric gases do cryocondense ambient or elevated deposition rates are low few of micrometer/min maximum) relying chemically to interest of Remission due to etching the surface of interest by plasma competes with the species have not been used in PECVD because the higher molecular weight monomers to a sufficient to vaporize them generally causes a reaction prior to vaporization, or of the
 suffering from onconeural anTigen expreSsing TumOrs AnD/or a pND. THe present invenTIon aDdresses and meets this neEd by pRoVIdinG A sEries Of HLA alLElE-SPecIfIc, ImmUnODoMinanT pePtides aS disclosed ThaT eLicit an immunE ReSponse to thE caRcinoma with lIttLe to no AuToiMMue siDe-eFfect. moreovER, this iNvention aDdREsses tHEse needS BY iDentIfying TCRs able to rECoGNize these HLA-pePtide cOmPLeXES prEseNt on tumor cElLs, and DEmonstrATeS THAt tHEy are sufficieNt to induce kILliNg in an OtHerWIse naïVe CTL. thE BasIc process of PlasMa enhanceD chemiCAl vapor DEpositiOn (PECVd) is DesCribED iN ThIN fIlm PRocEsSEs, j. L. VOssen, W. KeRn, EdItors, acadEMIC presS, 1978, PaRt IV, chaptEr IV-1 Plasma DepOsiTion OF InOrganIc ComPounDs, chaptEr IV-2 GlOw DisChArge PolymerizatIon, hErein incoRpoRaTed By ReferENce. BriEflY, a gLow discHarge plASma Is GENErAted on an electrode tHaT MAy Be smooth Or have POiNtED projectIoNs. TRadiTIOnallY, a gaS InLet introDuces hIGh VaPor presSuRe monoMeRic GasEs intO The pLasma rEgion wheRein rADicals are formeD So that upon subSEqUENt COlliSioNs with the suBstrATe, soMe of THe RadICals iN the mOnOMeRS chemically bond or crOsS link (cUre) on The substrate. THe high vapoR PREssure moNomeRIc GAses include gasEs of Ch4, SiH4, C2H6, C2H2, or GAses geneRated From high Vapor presSURe liquid, For ExaMplE stYREnE (10 torr at 87.4° F. (30.8° C.)), hexaNE (100 Torr At 60.4° f. (15.8° C.)), tetraMetHyldisiLoxAne (10 TorR at 82.9° f. (28.3° C.)), 1,3,-DichlorotEtramethYlDiSiLoXanE (75 torr AT 44.6° F. (7.0° C.)), and coMbInaTiOns ThereOF that mAybe eVapoRaTeD WitH mild coNTrOLLed hEaTiNg. BeCauSe These High VApoR pressuRe monomerIc gASes dO nOt Readily Cryocondense aT aMbient or elEvAteD tempeRATures, depOsition rates are low (a few tENths of mIcrOmeteR/min Maximum) reLyiNg on raDicALs chemIcally BondiNg To tHE SurfaCE Of IntErEst instead OF CryOcondEnSatiOn. RemisSion due to etching of THe sUrface of interEst By thE PLaSma COmPEteS wITh tHE Reactive depositIon. Lower vaPoR PrEssure specIEs hAvE not beeN used in pECVD BEcause hEating the Higher molEcUlar WEIghT monomers tO a temperAture suffICient TO vAporiZe tHem genErAllY causEs a reaCTioN prioR to vapOrIzatioN, or meTeRing of thE
 suffering from onconeural  antigen e xpres sin g t um orsand/ or a PND. Thep rese nt invention addresses  andme e ts t h is  need  by pro v id i n g a  s er ies  o f  H LA al lel e-speci fic, immun odo mi nant peptide s  a s disclose d t hat elicit a n i mmunere spo n se to  th e car cinoma with l ittle tono autoim m ue side - e ff ect.  Moreover, this i n ve n tion addresses  these  n e ed s byide ntifying T CR s abl e  to rec o gn i z e  th e se HLA-peptid e complexes pre sent o ntum o r cell s, an dd emo nstrates th at t hey are s uffici e nt to i n duce ki llinginanothe r wi se  na ïv e  CT L .The bas ic proce ss  o f pla smae n h a nced  ch emic al va por depositio n ( PECV D ) i s des cribe d in  T HIN F ILM PR OCESS ES , J. L. Vossen,  W.Kern, edi tor s,  Ac ad emicP ress,197 8,Part IV , Chapt e r I V- 1 P la sma Deposition ofIn o r ga nic Comp ounds, Ch ap t er IV-2Gl owDisc h a rge P olym e ri zation,herein in co rporate dby ref er enc e.Brief l y, a  glowdischarg e pla s ma is generate d  on an electr o de t ha t  may  be  smooth orhave poin tedp ro jec t ions.  Trad it i on a lly, a gas inlet in tr oduces  high  vapor pressu re monomer i c gases in to t h ep lasma region w herei n radicals are form ed so  that up on subseq u e nt colli sio nswit h t h e  s ubstrate, som e of t he  radica lsin themon ome rsche mi cally bon d or cro ss  l in k(cu re) o n  the sub st rat e.  Th e hig h  vapor  pres sure  m on o mer ic gase s  i n c lude  g as es o f C H4 , SiH 4, C 2 H6,  C2H2,or gasesgen e rate dfr om high  vapor pressu re  liquid, f or  ex amples t yrene (1 0 torr at 87.4° F. (30. 8 ° C.)),  he xane(100  torr at60. 4° F.(15 . 8° C.) ), tet ramet hy ldi s i loxan e (1 0 t or r at 82.9° F . ( 28.3°  C .)),  1,3,-d ichlorotetramethyl d isi loxane (75 to rrat 4 4 . 6°  F. (7 . 0°C. ) ),a n d combinationsthereof th at ma ybe evapor a ted  w ith mil d contr olled heating . Because  these hi gh  vap o r  pr essure mon omeric g ases do n o t rea d il y cry oco ndense  a t a mbien t or e l eva ted t empera tu res, d eposi ti on rates  are low (a few tenthsof mic romet er/ min maxim um) rel ying on r adic als chemic all y b ondin g t o  thesurf a ce  of inter esti nstead of cr yoc o n de nsation. Re m i s sio n due  to etchin g of  the surface of i n terest by theplas m a  co mpe t es w it h the reactive  de po s i tion. Lo we r vapor pre ssure sp ec i es ha ve not  beenused in P EC V D beca usehea ting thehig he r  molecu la rw eightmono me rs toa temp e ratu r e  sufficient to v apori z e  them gen erall ycausesa  rea ction prio r to vapori zation , or  mete ring of  t he
 suffering_from onconeural_antigen expressing tumors and/or_a PND._The_present invention_addresses_and meets this_need by providing_a series of HLA_allele-specific, immunodominant peptides_as_disclosed that elicit an immune response to the carcinoma with little to no autoimmue_side-effect._Moreover, this_invention_addresses_these needs by identifying TCRs_able to recognize these HLA-peptide_complexes present_on tumor cells, and demonstrates that they are_sufficient_to induce killing_in an otherwise naïve CTL. The basic process of_plasma enhanced chemical vapor deposition (PECVD)_is described in_THIN_FILM_PROCESSES, J. L. Vossen,_W. Kern, editors, Academic Press, 1978,_Part IV, Chapter IV-1 Plasma Deposition_of Inorganic Compounds, Chapter IV-2 Glow Discharge_Polymerization, herein incorporated by reference. Briefly,_a glow discharge plasma is_generated on_an electrode that may be_smooth or have_pointed projections._Traditionally, a gas_inlet introduces high vapor pressure monomeric_gases into the_plasma region wherein radicals are formed_so_that upon subsequent_collisions_with_the substrate,_some of the_radicals_in the_monomers_chemically bond or cross link (cure)_on_the substrate. The high vapor pressure monomeric_gases include gases of_CH4,_SiH4, C2H6, C2H2, or_gases generated from high vapor_pressure liquid, for example styrene (10_torr at_87.4° F._(30.8° C.)), hexane (100 torr at 60.4° F. (15.8° C.)), tetramethyldisiloxane_(10 torr at 82.9° F. (28.3°_C.)), 1,3,-dichlorotetramethyldisiloxane (75 torr_at 44.6°_F._(7.0° C.)), and_combinations_thereof that_maybe evaporated with mild controlled heating. Because_these high_vapor pressure monomeric gases do not_readily cryocondense at ambient_or_elevated temperatures, deposition rates are low_(a few tenths of micrometer/min maximum)_relying on radicals chemically bonding_to_the_surface of interest instead of_cryocondensation. Remission due to etching of_the surface of_interest by the plasma competes with the_reactive_deposition. Lower vapor pressure species have_not_been used in PECVD because heating_the_higher_molecular weight monomers to a_temperature sufficient to vaporize them generally_causes a reaction prior to vaporization, or metering of_the