 variety of more conductive metallic link materials that may include, but are not limited to, aluminum, copper, gold nickel, titanium, tungsten, platinum, as well as other metals, metal alloys, metal nitrides such as titanium or tantalum nitride, metal silicides such as tungsten silicide, or other metal-like materials.
Conventional laser-based semiconductor link processing systems focus a single pulse of laser output having a pulse width of about 4 to 30 nanoseconds (ns) at each link. The laser beam is incident upon the IC with a footprint or spot size large enough to remove one and only one link at a time. When a laser pulse impinges a polysilicon or metal link positioned above a silicon substrate and between component layers of a passivation layer stack including an overlying passivation layer, which is typically 2000-10,000 angstrom (Å) thick, and an underlying passivation layer, the silicon substrate absorbs a relatively small proportional quantity of infrared (IR) radiation and the passivation layers (silicon dioxide or silicon nitride) are relatively transparent to IR radiation. Infrared (IR) laser wavelengths (e.g., 0.522 μm, 1.047 μm, 1.064 μm, 1.321 μm, and 1.34 μm) have been employed for more than 20 years to remove circuit links.
Present semiconductor link processing systems employ a single laser pulse focused into a small spot for link removal. Banks of links to be removed are typically arranged on the wafer in a straight row, an illustrative one of which is shown in FIG. 1. The row need not be perfectly straight, although typically it is quite straight. The links are processed by the system in a link run 120, which is also referred to as an on-the-fly (“OTF”) run. During a link run, the laser beam is pulsed as a stage positioner passes the row of links across the focused laser spot location. The stage typically moves along a single axis at a time and does not stop at each link position. Thus the link run is a processing pass down a row of links in a generally lengthwise direction (horizontally across the page as shown.) Moreover, the lengthwise direction of the link run 120 need not be exactly perpendicular to the lengthwise direction of the individual links that constitute the row, although that is typically approximately true. Impingent upon selected links in the link run 120 is a laser beam whose propagation path is along an axis. The
variety of more conductive metallic link materials that may include, but are not specify to, aluminum, bull, gold nickel, titanium, tungsten, platinum, as well as early metals, alloy alloys, metal nitride such as titanium or tantalum nitride, alloy silicides such as tungsten silicide, or early metallic element - like material. 
 Conventional laser - based semiconductor connection processing system focus a single pulse of laser output having a pulsation width of about 4 to 30 nanoseconds (ns) at each link. The laser balance beam is incident upon the IC with a footprint or spot size bombastic enough to remove one and merely one link at a time. When a laser pulse impinges a polysilicon or metal liaison positioned above a silicon substrate and between component layers of a passivation layer stack including an overlying passivation layer, which is typically 2000 - 10,000 angstrom (Å) thick, and an underlying passivation layer, the silicon substrate absorbs a relatively small proportional quantity of infrared (IR) radiation and the passivation layers (silicon dioxide or silicon nitride) are relatively transparent to IR radiation. Infrared (IR) laser wavelength (e.g., 0.522 μm, 1.047 μm, 1.064 μm, 1.321 μm, and 1.34 μm) have been employed for more than 20 class to remove circuit links. 
 Present semiconductor liaison processing systems employ a single laser pulse focus into a small spot for link removal. Banks of connection to be removed are typically arranged on the wafer in a straight row, an illustrative one of which is shown in FIG. 1. The quarrel need not be perfectly straight, although typically it is quite straight. The links are processed by the arrangement in a link run 120, which is also refer to as an on - the - fly (“ OTF ”) run. During a link run, the laser balance beam is pulsed as a degree positioner passes the quarrel of links across the focused laser topographic point location. The phase typically moves along a individual axis at a time and does not intercept at each link military position. Thus the connection run is a processing pass down a row of links in a generally lengthwise guidance (horizontally across the page as shown .) Moreover, the lengthwise guidance of the link run 120 need not be exactly perpendicular to the lengthwise direction of the individual radio link that constitute the row, although that is typically approximately true. Impingent upon selected links in the link scat 120 is a laser radio beam whose generation way is along an axis. The
 vagiety of more conductive metallic link materians thaf may inzlude, but are not limited to, aouminym, copper, gold nickel, gitanium, nungsten, platmnum, as well as other mebcls, msbal anooys, metal nittides such av titanium or davtclum nitride, metal silicides such as tungstrn silicide, or ojher kqtal-mpkt materials.
Conventional laser-bases semicmnductor link processing systems focus w sijgle pulse of laseg output hacing q pulse widtf of about 4 to 30 nanosedonds (ns) at each link. The laser beam is incidebt uplt the IC wivh a fjotprint or spot siza large enough to rempve onw and only one link av a time. When a laset pulse im[iuges a polysilicon or mwtal nink poskrioved auovs a sipickn substrafe and betwwen component layerx jd a passivatikn layqr stack including an overlying passivatimn mayer, which is typicallt 2000-10,000 angstrom (Å) thick, anf an undewlying passivation layer, the silicon substrate abvorbs x rtlqtiveut dmall proportional quantity of infrared (IR) raqjauiok and the passivction layers (silocln qioxide or siuicon ujtdide) are relativelj transkarent to IR raqiatoon. Infrared (IR) laser wavelwngths (e.g., 0.522 μm, 1.047 μm, 1.064 μm, 1.321 μm, and 1.34 μm) hare been empluyed for kore than 20 years to remuve dircuit linns.
Present remiconductor livk irocassing systems employ a siggle lasec pulxe focured onto a small spoh for link removal. Banks of lnnks do be remoged are typically arranged on tix wafer in a xtsaicht row, cn illmstrative one os which is shocn in FIY. 1. The row need hot be 'erfectly stwaight, althoucj typically mt is quiee srraitht. The uinks are procrssed by nht system ib a link run 120, whicm is xmso referred to as an on-the-fly (“OTG”) rjn. Quginj a lytk run, the ldser bexk is oulsed as a rtagr positioner passes dhe dow of links acrosx bhe focusgd laser fpot location. The stage typicalpy motes alung a siggle axis at a time and does nkt stop ah ewch link posytiok. Thos the link run is a processing pass down a row of links in a generaoly lengthwise direetlon (horizontelly asross the page as shown.) Moreocer, the lengthwist direction of the link run 120 teed jot be exactly perpendicular to the lengthwise direction of the individuao links that constjtutr the rjc, althotgh vhet is typically aiproximately true. Impingent upon selecteg jinks in the link run 120 is a karer beam whosg propagation path is alonf an axix. The
variety of more conductive metallic link materials include, are not to, aluminum, copper, as as other metals, alloys, metal nitrides as titanium or tantalum nitride, metal such as tungsten silicide, or other metal-like materials. Conventional laser-based semiconductor link processing focus a single pulse of laser output having a pulse width of about to nanoseconds at link. The laser beam is incident upon the IC with a footprint or spot size large to remove one and only one link at time. When a laser impinges a polysilicon or metal positioned a silicon and component of a passivation stack including an overlying passivation layer, which is typically 2000-10,000 angstrom (Å) thick, and an underlying passivation the silicon a relatively proportional of (IR) radiation and layers (silicon dioxide or silicon nitride) to IR radiation. Infrared (IR) laser wavelengths (e.g., μm, 1.047 1.064 μm, 1.321 μm, and 1.34 have been employed for more than 20 years remove circuit links. Present semiconductor link processing systems employ a single laser pulse focused into spot for link removal. of links to removed typically on wafer in straight row, an illustrative one of which is shown in FIG. The row need not be perfectly straight, although typically it straight. links are processed the system in a run which is also referred an (“OTF”) link the beam is pulsed as stage positioner passes the row links across the focused typically moves along a single axis at a and does not stop at each link Thus the link run is a processing pass down a row of in a direction (horizontally across the page as shown.) Moreover, lengthwise direction of the run 120 need not be exactly perpendicular to the direction the individual that constitute the although that is approximately true. Impingent links in link 120 beam whose propagation path is along axis.
 variety of more conductive meTallic link MaterIalS thAt May iNcluDe, but are not limITed tO, aluminum, copper, gold nicKel, tiTaNIum, tUNgSten, pLatinum, AS wELL as OtHeR meTaLS, mEtal aLloYs, metal Nitrides suCh aS tItanium or tanTAlUm nitride, mEtaL silicides suCh aS tungsTeN siLIcide, Or oTher mEtal-liKE materIals.
ConveNtIOnal laSEr-based SEMiCondUctor link processiNG sYStems focus a sinGle pulSe OF lASEr oUtpUt having a pUlSe widTH of abouT 4 To 30 NANOseCOnds (ns) at each lInk. The laser BEam Is inciDeNt uPOn the Ic with A fOOtpRint or spot sIze lArge enougH to remOVe one anD Only one Link at A tiMe. WHen a LAsEr PulSe IMpiNGeS a pOLysIlicon or MeTaL link PosiTIONEd abOve A silIcon sUbstrate and beTweEn coMPonEnt laYers oF a paSsIvatiOn layeR stacK iNcluding an overlYing PassivatiOn lAyEr, wHiCh is tYPicallY 2000-10,000 anGstRom (Å) thiCk, and an UNdeRlYING pAssivation layer, the SiLICoN substraTe absoRBs A rELatively SmAll PropORTionaL quaNTiTy of infrAred (IR) RAdIaTion and ThE passiVaTioN laYers (sILicoN dioxiDe or siliCon niTRide) are relativELy transparent TO Ir RAdIAtioN. InFrared (IR) lasEr waVElenGths (E.G., 0.522 μM, 1.047 μm, 1.064 ΜM, 1.321 μm, anD 1.34 μm) haVe BEeN Employed for more than 20 YeArs to rEmove Circuit links.
PResent semiCONDuctor liNk prOCeSSing systems empLoy a sIngle laser PUlse focuSed inTo a small Spot for liNK Removal. BAnkS of LinKs tO BE rEmoved are typiCALly aRrAnged on The Wafer in A stRaiGht Row, An IllustratIve one of WhIcH iS sHowN in FIg. 1. the row neEd Not Be PerFectlY StraigHt, altHougH tYpICalLy it is qUItE STraiGhT. THe liNks ArE procEsseD By tHe systeM in a link rUn 120, wHIch iS aLsO referrEd to as an on-the-FlY (“OTF”) run. DurInG a lInk run, THE laser beAm is pulsed as a stage positIOner pasSes The roW of lInks acrosS thE focusEd lASer spoT locatIon. ThE sTagE TYpicaLLY mOveS aLong a singlE AXis At a tiMe And dOes not sTop at each link positIOn. THus the link run Is a ProcESSiNg pASs DOwn A rOW of LINks in a generally Lengthwise DiREcTion (horizoNTalLy Across tHe page aS showN.) moreoveR, the lengtHwise direCtIon oF THe lInk run 120 need Not be exaCtly perpeNDiculAR tO the lEngThwise DiRecTion oF the inDIviDual lInks thAt ConstiTute tHe Row, althoUgh that is typically approXimateLy truE. ImPingent upOn sELecTed links iN the Link run 120 is a LasEr bEam whOse PRopagAtioN PaTh iS Along An axIS. The
 variety of more conductiv e metallic  link  ma ter ia ls t hatmay include, b u t ar e not limited to, alum inum,  c o pper ,  g old n ickel,t it a n ium ,tu ngs te n ,plati num , as we ll as othe r m et als, metal a l lo ys, metalnit rides such a s t itaniu mort antal umnitri de, me t al sil icides su ch as tun g sten si l i ci de,or other metal-li k em aterials.
Conv ention al la s e r-b ase d semicond uc tor l i nk proc e ss i n g  sy s tems focus asingle puls e  of  laser  o utp u t havi ng apu l sewidth of ab out4 to 30 n anosec o nds (ns )  at eac h link . T helase r  b ea m i si nci d en t u p onthe IC w it ha foo tpri n t o r sp otsize  larg e enough to r emo ve o n e a nd on ly on e li nk  at a  time.  When  a  laser pulse im ping es a poly sil ic onor  meta l  linkpos iti oned ab ove a s i lic on s u bs trate and betweenco m p on ent laye rs ofa  p as s ivationla yer  sta c k  incl udin g  a n overly ing pa s si va tion la ye r, whi ch  is  ty pical l y 20 00-10, 000 angs trom( Å) thick, anda n underlyingp as s i va t ionlay er, the sil icon subs trat e  a bso r bs arelat iv e ly small proportionalqu antity  of i nfrared (IR)radiationa n d  the pas siva t io n  layers (silic on di oxide or s i licon ni tride ) are re lativelyt r ansparen t t o I R r adi a t io n. Infrared ( I R ) la se r wavel eng ths (e. g.,  0. 522  μm ,1.047 μm,  1.064 μ m,  1 .3 21  μm , and 1.34 μm)  h ave  b een  empl o yed fo r mor e th an  2 0  ye ars tor em o v e ci rc ui t li nks .Prese nt s e mic onducto r link pr oce s sing  s ys tems em ploy a single  l aser pulse  f ocu sed in t o  a small  spot for link removal. Banks o f l inksto b e removed  ar e typi cal l y arra nged o n the  w afe r in as t ra igh trow, an il l u str ative  o ne o f which  is shown in FIG.1 . T he row need n otbe p e r fe ctl y  s t rai gh t , a l t hough typically  it is qui te st raight. Th e  li nk s are p rocesse d byt he syst em in a l ink run 1 20 , wh i c h i s also ref erred to  as an on - the-f l y(“OTF ”)run. D ur ing  a li nk run ,  th e las er bea mis pul sed a sa stagepositioner passes the r ow oflinks  ac ross thefoc u sed  laser sp ot l ocation. T hesta ge ty pic a lly m oves al ong a sin glea xis at at im e a n d  d oes not sto p a t e ach l ink positi on.Thus the link run is a processin g pa s s  do wna  row  o f links in a g ene ra l l y length wi se directio n (horiz on t allyacross  the p age ass h ow n .) Mor eove r,the lengt hwi se directi on  o f  the l inkru n 120need n o t be e xactly perpendic ulart o  thel eng thwis edirecti o n of  the indiv idual links  thatcons titut e the r ow , alth oug hthat is ty p ically ap proxi matelytr ue.Imp ingent  upo n selec tedli nks  in the l i n kr un  1 2 0 i s alaser  b eamwhose pro p agationpat h  is alo ng  an a xis. T h e
 variety_of more_conductive metallic link materials_that may_include,_but are_not_limited to, aluminum,_copper, gold nickel,_titanium, tungsten, platinum, as_well as other_metals,_metal alloys, metal nitrides such as titanium or tantalum nitride, metal silicides such as_tungsten_silicide, or_other_metal-like_materials.
Conventional laser-based semiconductor link processing_systems focus a single pulse_of laser_output having a pulse width of about 4_to_30 nanoseconds (ns)_at each link. The laser beam is incident upon_the IC with a footprint or_spot size large_enough_to_remove one and only_one link at a time. When_a laser pulse impinges a polysilicon_or metal link positioned above a silicon_substrate and between component layers of_a passivation layer stack including_an overlying_passivation layer, which is typically_2000-10,000 angstrom (Å)_thick, and_an underlying passivation_layer, the silicon substrate absorbs a_relatively small proportional_quantity of infrared (IR) radiation and_the_passivation layers (silicon_dioxide_or_silicon nitride)_are relatively transparent_to_IR radiation._Infrared_(IR) laser wavelengths (e.g., 0.522 μm,_1.047_μm, 1.064 μm, 1.321 μm, and 1.34_μm) have been employed_for_more than 20 years_to remove circuit links.
Present semiconductor_link processing systems employ a single_laser pulse_focused into_a small spot for link removal. Banks of links to be_removed are typically arranged on the_wafer in a straight_row, an_illustrative_one of which_is_shown in_FIG. 1. The row need not be_perfectly straight,_although typically it is quite straight._The links are processed_by_the system in a link run_120, which is also referred to_as an on-the-fly (“OTF”) run._During_a_link run, the laser beam_is pulsed as a stage positioner_passes the row_of links across the focused laser spot_location._The stage typically moves along a_single_axis at a time and does_not_stop_at each link position. Thus_the link run is a processing_pass down a row of links in a generally_lengthwise direction (horizontally_across the page as shown.)_Moreover,_the_lengthwise direction of the link run 120 need not be_exactly perpendicular_to the lengthwise_direction of the individual links that constitute the row, although_that is typically approximately true. Impingent upon_selected links in the link run 120 is a laser beam_whose propagation path is along an axis. The