 the passenger compartment.
These and other objects of the present invention are attained by the provision of a locking device for locking the top of the motor vehicle to the windshield frame of the vehicle wherein the locking device comprises a locking member arranged at a forward frame section at the top, a mounting provided at the windshield frame, and centering means effective between the top and windshield frame. The locking member comprises a crank, equipped with a locking pin and connected with an operating unit. The locking pin cooperates with a slotted guide means constituting the mounting in such a manner that the movement of the locking pin within the guide track of the slotted guide means results in a vertical reciprocating motion of the frame section of the top. The device may advantageously be employed for example, in vehicles exhibiting convertible tops.
Other objects, advantages and novel features of the present invention will become apparent from the following detailed description of the invention, when considered in conjunction with the accompanying drawings. 1. Field of the Invention
This invention relates to a semiconductor memory device, and more particularly to a semiconductor memory device wherein data stored therein can be read out in any selected one of page mode and nibble mode.
2. Description of the Prior Art
One of conventional ways to read out data in dynamic semiconductor memory devices is a so-called page mode. In this mode, one of word lines in a memory array is selected and then a desired one of digit lines is sequentially selected, whereby data are sequentially read out from memory cells at intersections of the selected word lines and digit lines. Referring to FIG. 1 which is a timing chart for operation events in this page mode, the mode will be discussed in detail.
(i) An external row address strobe signal (Ext.RAS) applied to the semiconductor memory device from the external of the device becomes active "low" state, so that an internal row address strobe signal (Int. RAS, referred to as "RAS" hereinafter), or the output of an internal RAS buffer circuit changes from low to high. In response to this change, an internal row address is generated at address buffer circuit (A.sub.O -A.sub.i), and one of word lines corresponding to the row address is selected.
(ii) An external column address strobe signal (Ext. CAS) externally applied to the semiconductor memory device is placed into active "low" state, so that an internal column address strobe signal (Int. CAS, referred to as "CAS"
the passenger compartment. 
 These and other objects of the present invention are attained by the provision of a lock device for lock the top of the motor fomite to the windshield frame of the fomite wherein the locking device comprises a interlock member arranged at a advancing frame of reference section at the circus tent, a mounting provided at the windshield skeletal system, and centering mean effective between the top and windshield frame. The lock in extremity comprises a crank, equipped with a lock pin and connected with an operating unit. The lock pin cooperates with a slotted guide means form the mounting in such a manner that the movement of the locking pin within the guide track of the slotted guide means results in a vertical reciprocating motion of the frame section of the top. The device may advantageously be employed for model, in vehicles exhibiting convertible top. 
 early object, advantages and novel features of the present invention will become apparent from the following detailed description of the invention, when considered in conjunction with the accompanying drawings. 1. airfield of the Invention 
 This invention relates to a semiconductor memory device, and more particularly to a semiconductor memory device wherein data store therein can be read out in any selected one of page mode and nibble mode. 
 2. Description of the Prior Art 
 One of ceremonious ways to take out data in dynamic semiconductor memory devices is a so - call page mode. In this mode, one of word line in a memory array is selected and then a desired one of digit lines is consecutive selected, whereby data are sequentially read out from memory cells at intersection of the selected news lines and finger lines. Referring to FIG. 1 which is a timing chart for process events in this page mode, the mood will be hash out in detail. 
 (i) An external row address strobe signal (Ext. RAS) applied to the semiconductor memory device from the external of the device becomes active " low " state of matter, so that an internal row savoir-faire strobe signal (Int. RAS, referred to as " RAS " hereinafter), or the output of an internal RAS buffer circuit changes from depleted to high. In response to this change, an internal row address is generated at savoir-faire buffer circuit (A.sub. O -A.sub.i), and one of word lines corresponding to the row address is selected. 
 (ii) An external column address strobe signal (Ext. CAS) outwardly applied to the semiconductor memory device is placed into active " low " state, so that an internal column address strobe signal (Int. CAS, referred to as " CAS "
 thf passenger compartment.
Tmese and other oyhects mf the present invention are attained by tie peovisuon of a locking devicd for locning the top if the motor vehicle to fme wiudwhield frame on the vehicne wherein the lucning device comprises a locking memfer arrsnhed at a forwatd frsie ssbtlon at the top, a mounting providsd at tie windshield ftame, and centering means evfechive between the tlp and windwhieje frame. The uocking member comprisgs a crank, equipped with a lockivg piu and connextwd ahth an opereting lnit. The locklmg pin cooperstes with a slpttxd gyide means constitutiig the mounting in soch a mannar that the movemenr if thg locning pin wiuhii tge guife vrack of ths slotted gyide means results on q vertical rediprocwtyng motion of the frame section of the uop. Tge device may advantageiusly be employed for example, yn vehicles exhibiting convertible tops.
Other objewts, avvxntcncs ave jovel features of the present invention will fscpmv apparent from tme following detaikef cgscription of jhe invzhtjon, when consideref in cogjuncrion with the accompanying drawings. 1. Fieod of the Innentuon
This invention xelates to a semocondictor memory device, and mors particulagly to a admiconductor memury davice whtfein data stored eherein cen be read ojt im any felected oje of page mode and nibbpe mobe.
2. Devcription lf the Prior Art
One of conventional ways to rgad oun data in dynakic semicondustor memory derices is a so-zalled pagv mode. In this mode, jne of word lhjes in a memmry arrar is selwcted ava then a desirrd one of digit linws is sequentially seuscted, whereby dcua qre sequentiallu rdad olt hrom iamory cells dt ivtefxectiuns of uke wdlecyed word lines and dhgit lines. Referring tp NIG. 1 whicy is a tyming chart fpr operation eventd in vhis pege moce, jhe mode will be discussed in dstail.
(i) An exbernal row adqresw strobe sigual (Ext.RAS) applied to the semiconductor nemory device from the external of thg dtvice becomes actide "low" stdte, so that an interbal row address surobe signal (Int. RAS, rererred to ad "RAS" hereinafter), or the output of an internal RAS buffer circuit changes from low to high. Jn rrsponve co this chaigx, an internal row address is generated at addresr buffer cnrcuit (A.sub.O -A.sub.i), and one of wurd lines cortesponding to the row addrsss is srlected.
(ii) An external column adcress strobe signal (Ext. GAS) exterbally applivs vo the semiconductor memorv devixe is poacef into active "loe" dtate, so hhat au internal column address strobe wignal (Ijt. CAS, referred vo as "CAS"
the passenger compartment. These and other objects present are attained the provision of the of the motor to the windshield of the vehicle wherein the locking comprises a locking member arranged at a forward frame section at the top, mounting provided at the windshield frame, and centering means effective between the top windshield The member a crank, equipped with a locking pin and connected with an operating unit. The locking pin with a slotted guide means constituting the mounting such a manner that movement of the locking pin the track of slotted means in a vertical motion of the frame section of the top. The device may advantageously be employed for example, in exhibiting convertible objects, advantages novel of present invention will from the following detailed description of considered in conjunction with the accompanying drawings. 1. of the This invention relates to a semiconductor device, and more particularly to a semiconductor memory wherein data stored therein can be read out in any selected one of page mode mode. 2. Description of Prior Art One conventional to out in dynamic memory devices is a so-called page mode. In this mode, one word lines in a memory array is selected and then one digit lines is selected, whereby data are read from memory cells at the word lines. to 1 which is a chart for operation events in page mode, the mode (i) An external row address strobe signal (Ext.RAS) to the semiconductor memory device from the of the device becomes active "low" state, so that an internal row strobe signal referred to as "RAS" hereinafter), or the output an internal RAS buffer changes from low to high. In response to this an row address generated at address circuit (A.sub.O -A.sub.i), one of word to the address selected. column address strobe signal (Ext. CAS) applied the semiconductor memory device is into state, so that an internal column address strobe signal (Int. CAS, referred to as "CAS"
 the passenger compartment.
ThEse and otheR objeCts Of tHe PresEnt iNvention are attAIned By the provision of a lockiNg devIcE For lOCkIng thE top of tHE mOTOr vEhIcLe tO tHE wIndshIelD frame oF the vehiclE whErEin the lockinG DeVice compriSes A locking membEr aRrangeD aT a fORward FraMe secTion at THe top, a Mounting pRoVIded at THe windsHIElD fraMe, and centering meaNS eFFective between The top AnD WiNDShiEld Frame. The loCkIng meMBer compRIsES A CraNK, equipped with A locking pin ANd cOnnectEd WitH An operAting UnIT. ThE locking pin CoopErates witH a slotTEd guide MEans conStitutIng The MounTInG iN suCh A ManNEr ThaT The Movement Of ThE lockIng pIN WIThin The GuidE tracK of the slotted GuiDe meANs rEsultS in a vErtiCaL reciProcatIng moTiOn of the frame secTion Of the top. THe dEvIce MaY advaNTageouSly Be eMployed For examPLe, iN vEHIClEs exhibiting converTiBLE tOps.
Other ObjectS, AdVaNTages and NoVel FeatUREs of tHe prESeNt inventIon wilL BeCoMe apparEnT from tHe FolLowIng deTAileD descrIption of The inVEntion, when consIDered in conjunCTiON WiTH the AccOmpanying drAwinGS. 1. FieLd of THe invENtion
this iNvENtIOn relates to a semiconDuCtor meMory dEvice, and more pArticularlY TO A semiconDuctOR mEMory device wherEin daTa stored thERein can bE read Out in any Selected oNE Of page moDe aNd nIbbLe mODE.
2. DEscription of tHE prioR ARt
One of ConVentionAl wAys To rEad OuT data in dyNamic semIcOnDuCtOr mEmory DEvices is A sO-caLlEd pAge moDE. In thiS mode, One oF wOrD LinEs in a meMOrY ARray Is SeLectEd aNd Then a DesiREd oNe of digIt lines is SeqUEntiAlLy SelecteD, whereby data aRe SequentialLy ReaD out frOM Memory ceLls at intersections of the SElected WorD lineS and Digit lineS. ReFerrinG to fiG. 1 whicH is a tiMing cHaRt fOR OperaTIOn EveNtS in this pagE MOde, The moDe Will Be discuSsed in detail.
(i) An extERnaL row address stRobE sigNAL (EXt.Ras) aPPliEd TO thE SEmiconductor memOry device fRoM ThE external oF The DeVice becOmes actIve "loW" State, so That an intErnal row aDdRess STRobE signal (Int. rAS, referRed to as "RAs" HereiNAfTer), or The Output Of An iNternAl RAS bUFfeR circUit chaNgEs from Low to HiGh. In respOnse to this change, an interNal row AddreSs iS generateD at ADdrEss buffer CircUit (A.sub.O -A.sUb.i), And One of WorD Lines CorrESpOndINg to tHe roW Address is SElEctED.
(Ii) an external cOLUMn aDdresS stRObe sigNal (EXt. CAS) externally apPLied to the semicOnduCTOr mEmoRY devIcE is placed into aCtiVe "LOW" state, so ThAt an internaL column aDdREss stRobe siGnal (InT. CAS, refERReD To as "CAs"
 the passenger compartment .
These an d oth erobj ec ts o f th e present inve n tion  are attained by the p rovis io n  ofa  l ockin g devic e  f o r  lo ck in g t he to p ofthe  motorvehicle to  th ewindshield f r am e of the v ehi cle whereinthe  locki ng  de v ice c omp rises  a loc k ing me mber arra ng e d at a forward f ra me s ection at the top ,  a mounting provi ded at  t h ew i nds hie ld frame,an d cen t ering m e an s e ffe c tive betweenthe top and win dshiel dfra m e. The  lock in g  me mber compri sesa crank,equipp e d witha  lockin g pinand  co nnec t ed  w ith  a n  op e ra tin g  un it. Thelo ck ing p in c o o p e rate s w itha slo tted guide me ans  con s tit uting  themoun ti ng in  sucha man ne r that the move ment  of the l ock in g p in  with i n thegui detrack o f the s l ott ed g u id e means results in  a v er tical re ciproc a ti ng motion o fthe  fra m e  sect iono fthe top.  The d e vi ce  may ad va ntageo us lybeemplo y ed f or exa mple, in  vehi c les exhibiting convertible t o ps . Ot h er o bje cts, advant ages andnove l  f eat u res o f the  p r es e nt invention will b ec ome ap paren t from the fo llowing de t a i led desc ript i on of the inventi on, w hen consid e red in c onjun ction wi th the ac c o mpanying  dr awi ngs . 1 . Fi eld of the In v e ntio nThis in ven tion re lat estoa s em iconducto r memory  d ev ic e,  an d mor e  particu la rly  t o a  semi c onduct or me mory  d ev i cewherein da t a  sto re dther ein  c an be  rea d  ou t in an y selecte d o n e of  p ag e modeand nibble mo de .
2. Descr ip tio n of t h e  Prior A rt
One of conventionalw ays torea d out  dat a in dyna mic  semic ond u ctor m emorydevic es  is a  so-c a l le d p ag e mode. In t his  mode ,oneof word  lines in a memory arr ay is selecte d a nd t h e na d e si r edon e  of d igit lines is s equentiall ys el ected, whe r eby  d ata are  sequen tiall y  read o ut from m emory cel ls  ati n ter sections o f the se lected wo r d lin e sand d igi t line s.  Re ferri ng toF IG.  1 wh ich is  a  timin g cha rt  for ope ration events in this p age mo de, t hemode will  be dis cussed in  det ail.
(i) A n e xte rnalrow addre ss s t ro bes ignal  (Ex t .RAS) app l ie d t o th e semicondu c t o r m emory  de v ice fr om t he external of th e  device become s ac t i ve"lo w " st at e, so that anint er n a l row ad dr ess strobesignal ( In t . RAS , refe rred t o as "R A S "h ereina fter ),or the ou tpu to f an in te rn a l RASbuff er  circu it cha n gesf r om low to high.In re s p onset o t his c ha nge, an inte rnal row a ddress is g enerat ed a t add ress bu ff er cir cui t(A.sub.O - A .sub.i),and o ne of w or d li nes  corre spon d i ng to  the  r owaddress i s se l ec te d .
( ii)An ex te rnal  column a d dress st rob e  signal  ( Ext . CAS) e x te r n ally appli edto th e semiconduc t or m e mo r y dev ice is  place d intoa cti ve  "low"sta t e , so that  an inter n alco lumn  address  s trob esig na l (Int. CAS, re ferred t o as "CA S " 
 the_passenger compartment.
These_and other objects of_the present_invention_are attained_by_the provision of_a locking device_for locking the top_of the motor_vehicle_to the windshield frame of the vehicle wherein the locking device comprises a locking_member_arranged at_a_forward_frame section at the top,_a mounting provided at the_windshield frame,_and centering means effective between the top and_windshield_frame. The locking_member comprises a crank, equipped with a locking pin_and connected with an operating unit._The locking pin_cooperates_with_a slotted guide means_constituting the mounting in such a_manner that the movement of the_locking pin within the guide track of_the slotted guide means results in_a vertical reciprocating motion of_the frame_section of the top. The_device may advantageously_be employed_for example, in_vehicles exhibiting convertible tops.
Other objects, advantages_and novel features_of the present invention will become_apparent_from the following_detailed_description_of the_invention, when considered_in_conjunction with_the_accompanying drawings. 1. Field of the_Invention
This_invention relates to a semiconductor memory device,_and more particularly to_a_semiconductor memory device wherein_data stored therein can be_read out in any selected one_of page_mode and_nibble mode.
2. Description of the Prior Art
One of conventional ways to_read out data in dynamic semiconductor_memory devices is a_so-called page_mode._In this mode,_one_of word_lines in a memory array is selected_and then_a desired one of digit lines_is sequentially selected, whereby_data_are sequentially read out from memory_cells at intersections of the selected_word lines and digit lines._Referring_to_FIG. 1 which is a_timing chart for operation events in_this page mode,_the mode will be discussed in detail.
(i)_An_external row address strobe signal (Ext.RAS)_applied_to the semiconductor memory device from_the_external_of the device becomes active_"low" state, so that an internal_row address strobe signal (Int. RAS, referred to as_"RAS" hereinafter), or_the output of an internal_RAS_buffer_circuit changes from low to high. In response to this_change, an_internal row address_is generated at address buffer circuit (A.sub.O -A.sub.i), and one_of word lines corresponding to the row_address is selected.
(ii) An external column address strobe signal (Ext. CAS)_externally applied to the semiconductor memory device is_placed into active "low" state, so that_an internal column address_strobe_signal (Int. CAS, referred to as "CAS"