 requirements. Accordingly, the integrated circuits that make up the memory device may be designed to consume less space. The reduction in size of these integrated circuits is a key component to the technological development of many devices containing electrical components. Accordingly, the fabrication processes that are used to form these integrated circuits have experienced dramatic changes.
Integrated circuits, such as memory devices, are typically fabricated on a wafer surface through any number of manufacturing processes, such as layering, doping, and patterning. Layering generally refers to adding material to the surface of the wafer by a growth process, such as oxidation, or through a deposition process, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD). Doping generally refers to the process of implanting dopants into the wafer surface or overlying layer and may be used to increase the current carrying capacity of a region of the wafer or overlying layer of material. The doping process may be implemented before a layer is formed, between layers, or even after the layer are formed. Generally, the doping process may be accomplished through an ion implantation process, using boron or other similar dopants, or through thermal diffusion, for example.
Patterning refers to a series of steps that result in the removal of selected portions of layers or underlying wafer material. After removal of the selected portions of the layer(s), via a wet or dry etch process, a pattern of the layer is left on the wafer surface. The removal of material allows the structure of the device to be formed by providing holes or windows between layers or by removing unwanted layers. Patterning sets the critical dimensions of the integrated circuit structures being fabricated. Disadvantageously, errors in the patterning and removal process may result in changes and failures in the electrical characteristics in the device.
One commonly used patterning technique is photolithography. In using photolithography, a pattern may be formed by using a photomask to expose certain regions of a radiation sensitive material, such as a photoresist or resist, to a certain wavelength of light. Typically, the radiation source provides UV light to pattern the resist. However, certain resists may also be implemented using other energy types, such as X-rays. Exposure to the radiation changes the structure of the resist. If the resist is a negative resist, then the resist become polymerized where it is exposed. If the resist is a positive resist, the exposed region of resist becomes divided or softened. After the exposure to the radiation, the unpolymerized regions may be dissolved by applying
requirements. Accordingly, the integrated circuits that seduce up the memory device may be design to consume less space. The reduction in size of these desegregate circuits is a key part to the technological development of many devices incorporate electrical components. consequently, the fabrication processes that are used to form these integrate circuits have experienced dramatic changes. 
 Integrated circuits, such as memory device, are typically fabricated on a wafer surface through any number of fabrication processes, such as layering, doping, and patterning. Layering by and large refers to add material to the surface of the wafer by a growth process, such as oxidation, or through a deposition procedure, such as chemical vapor deposition (CVD) or physical vapor deposition (PVD). Doping generally refers to the process of implanting dopants into the wafer surface or overlying layer and may be used to increase the current carrying capacity of a region of the wafer or overlying layer of fabric. The dope process may be follow through before a layer is formed, between layers, or even after the layer are form. Generally, the doping process may be accomplished through an ion implantation procedure, using boron or other similar dopants, or through thermal diffusion, for example. 
 Patterning denote to a series of steps that result in the removal of selected helping of layers or implicit in wafer material. After removal of the selected portions of the layer(s), via a wet or dry etch process, a radiation pattern of the layer is left on the wafer surface. The removal of fabric allows the social organization of the device to be formed by providing holes or windows between layers or by absent unwanted layers. Patterning dress the critical dimensions of the integrate circuit social organization being fabricated. badly, errors in the patterning and removal process may result in change and failures in the electrical characteristics in the device. 
 One commonly used patterning technique is photolithography. In using photolithography, a pattern may be formed by using a photomask to unwrap certain regions of a radiotherapy sensitive material, such as a photoresist or resist, to a sealed wavelength of light. Typically, the radiation source provides UV light to pattern the resist. However, certain resists may also be implemented using early energy types, such as ten - rays. Exposure to the radiation changes the structure of the resist. If the resist is a negative resist, then the resist become polymerized where it is expose. If the resist is a positive resist, the exposed region of resist become divided or softened. After the exposure to the radiation, the unpolymerized regions may be dissolved by apply
 reeuirements. Accordingly, tme integrated citcyits tiat maks up the memory device may be designxd ti conwume less space. The reauction ij size od thtse integrated cicduits is a keg com'oient to the tecmnological gevelopment of mxnv devices containing electrical compjnents. Scfordingly, the sabrpcwtioh processes that are used to form fhese iitegrated circuots have experienced dramahic fhanges.
Integrated fircuits, suxh af memory devizes, are tykieally fabridated on a wafer surface througf any number of mqnuvdcturing pricessvs, such as lanvring, dmping, amd patterning. Kayxrint generally refers to adding material tj the surxaee of the wafer by a triwth krocevs, sjxh xs kxmdafion, og tirough a delosition pricess, such as chemivaj vapor deposifion (CDD) or physical vapor deposition (PVD). Dopinc gsnerally refers to the process of implanting dopants ynto the wafer surface or overlying layer and may be uadd uo incrdqsf the current carrying capacity of a region os tne wafer or overjying layer ov kwterial. The duping 'dodess may be implemfnted bgfore q layer if fotmed, between layers, or even after the lcyee are formed. Generclly, the dopnng prpcess may be accomplished thxough zn ion implwntation lfocess, using borun pr other similar dopants, or ehrough tiermak diffurion, for evample.
Pattfrninn refers to a seried of dtaps that rfsult in the removal of selectev portions of ldyegs or undzrlyinn wafer materiaj. After removak of thz selezted portikns of vhe layer(s), vya a wet or dsi etch procesv, a pattqrn if tye layef is left on thr wafer slryace. The eemoval of materiak aumows the structbxe of the device yo ce sogmev by [soviding holas of wkmdows between lanerr or by removing unwanteg lagers. Patterning seys the crijical dimqnsions of thr integrated circult stcucturxs beimg sabricated. Disadvantageously, edrors in hhe patterning wnd vemodal procesx may result in changes and failures in the electrical chqracteristics in thg dtvice.
One commpnly tsed pattarning technique is photolithography. Ln using photolithogralhy, a [attegn may be formed by using a photomask to expose certain regions of a radiqtion sensitive maferisl, subh cs c photowesidv or resist, to a bertain wavelength of light. Typirally, the sabiation source provides UV libhg to pattern jhe resist. However, certain resists may also be implemented using pther energy types, such ss X-rays. Expoaure to thx radiation changes yhe stxucturw of thw redist. If the rdsixt is a negwtivt reaist, then the resist become polynerizee ahere it is expoved. If the verist ps a pofitive resist, ths exllsed tegion of resixt becomes divoded or softened. Aftvr ehe exposure ti the radiatipn, thg unpolymerized regions maf be dissolved by applying
requirements. Accordingly, the integrated circuits that make memory may be to consume less of integrated circuits is key component to technological development of many devices containing components. Accordingly, the fabrication processes that are used to form these integrated circuits experienced dramatic changes. Integrated circuits, such as memory devices, are typically fabricated on wafer through number manufacturing processes, such as layering, doping, and patterning. Layering generally refers to adding material to the of the wafer by a growth process, such oxidation, or through a process, such as chemical vapor (CVD) physical vapor (PVD). generally to the process implanting dopants into the wafer surface or overlying layer and may be used to increase the current capacity of of the or layer material. The doping be implemented before a layer is or even after the layer are formed. Generally, doping process be accomplished through an ion implantation using boron or other similar dopants, or through diffusion, for example. Patterning refers to a series of steps that result in the removal portions of layers or wafer material. After of selected of layer(s), via wet or dry etch process, a pattern of the layer is on the wafer surface. The removal of material allows the the to be formed providing holes or windows layers by removing unwanted layers. the dimensions circuit being Disadvantageously, errors in the and removal process may result changes and failures in device. One commonly used patterning technique is photolithography. using photolithography, a pattern may be formed using a photomask to expose certain regions of a radiation sensitive material, as a resist, to a certain wavelength of light. Typically, radiation source provides UV to pattern the resist. However, certain resists may also implemented other energy such as X-rays. to the radiation the structure of If the is negative resist become polymerized where it is If resist is a positive resist, exposed resist becomes divided or softened. After the exposure to the radiation, the unpolymerized regions may by applying
 requirements. Accordingly, thE integrateD circUitS thAt Make Up thE memory device mAY be dEsigned to consume less spAce. ThE rEDuctIOn In sizE of thesE InTEGraTeD cIrcUiTS iS a key ComPonent tO the technoLogIcAl developmenT Of Many deviceS coNtaining elecTriCal comPoNenTS. AccoRdiNgly, tHe fabrICation Processes ThAT are usED to form THEsE intEgrated circuits haVE eXPerienced dramaTic chaNgES.
INTEgrAteD circuits, sUcH as meMOry deviCEs, ARE TypICally fabricatEd on a wafer sURfaCe throUgH anY Number Of manUfACtuRing processEs, suCh as layerIng, dopINg, and paTTerning. layeriNg gEneRallY ReFeRs tO aDDinG MaTerIAl tO the surfAcE oF the wAfer BY A GRowtH prOcesS, such As oxidation, or ThrOugh A DepOsitiOn proCess, SuCh as cHemicaL vapoR dEposition (CVD) or pHysiCal vapor dEpoSiTioN (PvD). DopINg geneRalLy rEfers to The procESs oF iMPLAnTing dopants into the WaFER sUrface or OverlyINg LaYEr and may Be UseD to iNCRease The cURrEnt carryIng capACiTy Of a regiOn Of the wAfEr oR ovErlyiNG layEr of maTerial. ThE dopiNG process may be iMPlemented befoRE a LAYeR Is foRmeD, between layErs, oR Even AfteR ThE laYEr are FormeD. GENeRAlly, the doping procesS mAy be acComplIshed through aN ion implanTATIon proceSs, usINg BOron or other simIlar dOpants, or thROugh therMal diFfusion, fOr example.
pATterning RefErs To a SerIES oF steps that resULT in tHe Removal Of sElected PorTioNs oF laYeRs or underLying wafEr MaTeRiAl. AFter rEMoval of tHe SelEcTed PortiONs of thE layeR(s), viA a WeT Or dRy etch pROcESS, a paTtErN of tHe lAyEr is lEft oN The Wafer suRface. The rEmoVAl of MaTeRial allOws the structuRe Of the devicE tO be Formed BY ProvidinG holes or windows between lAYers or bY reMovinG unwAnted layeRs. PAtternIng SEts the CriticAl dimEnSioNS Of the INTeGraTeD circuit stRUCtuRes beInG fabRicated. disadvantageously, eRRorS in the patternIng And rEMOvAl pROcESs mAy REsuLT In changes and faiLures in the ElECtRical charaCTerIsTics in tHe devicE.
One cOMmonly uSed patterNing technIqUe is PHOtoLithographY. In using PhotolithOGraphY, A pAtterN maY be forMeD by Using A photoMAsk To expOse cerTaIn regiOns of A rAdiation Sensitive material, such as A photoResisT or Resist, to a CerTAin WavelengtH of lIght. TypicaLly, The RadiaTioN SourcE proVIdEs Uv Light To paTTern the reSIsT. HoWEVeR, certain resISTS maY also Be iMPlemenTed uSing other energy tyPEs, such as X-rays. EXposURE to The RAdiaTiOn changes the stRucTuRE Of the resIsT. If the resisT is a negaTiVE resiSt, then The resIst becoME PoLYmerizEd whEre It is exposEd. IF tHE resist Is A pOSitive ResiSt, The expOsed reGIon oF REsist becomes diviDed or SOFteneD. aftEr the ExPosure tO The rAdiation, thE unpolymeriZed regIons May be DissolvEd By applYinG
 requirements. Accordingly , the inte grate d c irc ui ts t hatmake up the me m orydevice may be designed  to c on s umel es s spa ce. The re d u cti on  i n s iz e  o f the seintegra ted circui tsis  a key compo n en t to the t ech nological de vel opment  o f m a ny de vic es co ntaini n g elec trical co mp o nents. Accordi n g ly , th e fabrication pro c es s es that are us ed tofo r mt h ese  in tegrated c ir cuits have ex p er i e n ced dramatic chan ges.
Integr a ted  circu it s,s uch as  memo ry dev ices, are t ypic ally fabr icated on a wa f er surf ace th rou ghanyn um be r o fm anu f ac tur i ngprocesse s,  s uch a s la y e r i ng,dop ing,  andpatterning. L aye ring gen erall y ref ersto  addi ng mat erial  t o the surface o f th e wafer b y a  g row th  proc e ss, su chasoxidati on, ort hro ug h a  d eposition process,  s u c has chemi cal va p or  d e position  ( CVD ) or p hysic al v a po r deposi tion ( P VD ).  Doping  g eneral ly  re fer s tot he p rocess  of impl antin g  dopants intot he wafer surf a ce o ro verl yin g layer and  may be u sedt oinc r easethe c ur r en t  carrying capacityof  a reg ion o f the wafer o r overlyin g l ayer ofmate r ia l . The doping p roces s may be i m plemente d bef ore a la yer is fo r m ed, betw een  la yer s,o r  e ven after the l ayer  a re form ed.  Genera lly , t hedop in g process  may beac co mp li she d thr o ugh an i on  im pl ant ation proces s, us ingbo ro n  or  others im i l ar d op an ts,orth rough  the r mal  diffus ion, forexa m ple. 
P at terning  refers to ase ries of st ep s t hat re s u lt in th e removal of selected p o rtionsoflayer s or  underlyi ngwafermat e rial.Afterremov al  of t he se l e ct edpo rtions oft h e l ayer( s) , vi a a wet  or dry etch proce s s,a pattern ofthe  lay e r  i s l e ft onth e  wa f e r surface. Theremoval of  m a te rial allow s  th estructu re of t he de v ice tobe formed  by provi di ng h o l esor windows  between  layers o r  by r e mo vingunw antedla yer s. Pa tterni n g s ets t he cri ti cal di mensi on s of the  integrated circuit str ucture s bei ngfabricate d.D isa dvantageo usly , errors i n t hepatte rni n g and  rem o va l p r ocess  may result in ch ang e s  a nd failures i n  th e ele ctr i cal ch arac teristics in thed evice.
One com monl y use d p a tter ni ng technique i s p ho t o lithogra ph y. In using  photoli th o graph y, a p attern  may be f or m ed byusin g a  photomas k t oe xpose c er ta i n regi onsof  a rad iation sens i t ive material, su ch as a  phot o res ist o rresist, to a  certain w avelength o f ligh t. T ypica lly, th eradiat ion  s ource prov i des UV li ght t o patte rn  the  re sist.Howe v e r, ce rtai nres ists maya l so be  i m ple ment ed us in g ot her energ y  types,suc h  as X-r ay s.E x posure to t he radiati onchang e s  the struc t ureo ft he re sist.If the  resist isanegativ e r e s ist, then  the resi s t b ec omepolymeri ze d wh er e i tis exposed. Ifthe resi st is ap o sitive  re s ist, the ex po sed region o f res is t  become s div ided or sof ten ed.  Aft erthee xposure to the radiation , th e unp o lym erize d reg io ns may b e  dis solved b y  applying
 requirements._Accordingly, the_integrated circuits that make_up the_memory_device may_be_designed to consume_less space. The_reduction in size of_these integrated circuits_is_a key component to the technological development of many devices containing electrical components. Accordingly,_the_fabrication processes_that_are_used to form these integrated_circuits have experienced dramatic changes.
Integrated_circuits, such_as memory devices, are typically fabricated on a_wafer_surface through any_number of manufacturing processes, such as layering, doping, and_patterning. Layering generally refers to adding_material to the_surface_of_the wafer by a_growth process, such as oxidation, or_through a deposition process, such as_chemical vapor deposition (CVD) or physical vapor_deposition (PVD). Doping generally refers to_the process of implanting dopants_into the_wafer surface or overlying layer_and may be_used to_increase the current_carrying capacity of a region of_the wafer or_overlying layer of material. The doping_process_may be implemented_before_a_layer is_formed, between layers,_or_even after_the_layer are formed. Generally, the doping_process_may be accomplished through an ion implantation_process, using boron or_other_similar dopants, or through_thermal diffusion, for example.
Patterning refers_to a series of steps that_result in_the removal_of selected portions of layers or underlying wafer material. After removal_of the selected portions of the_layer(s), via a wet_or dry_etch_process, a pattern_of_the layer_is left on the wafer surface. The_removal of_material allows the structure of the_device to be formed_by_providing holes or windows between layers_or by removing unwanted layers. Patterning_sets the critical dimensions of_the_integrated_circuit structures being fabricated. Disadvantageously,_errors in the patterning and removal_process may result_in changes and failures in the electrical_characteristics_in the device.
One commonly used patterning_technique_is photolithography. In using photolithography, a_pattern_may_be formed by using a_photomask to expose certain regions of_a radiation sensitive material, such as a photoresist or_resist, to a_certain wavelength of light. Typically,_the_radiation_source provides UV light to pattern the resist. However, certain_resists may_also be implemented_using other energy types, such as X-rays. Exposure to the_radiation changes the structure of the resist._If the resist is a negative resist, then the resist become_polymerized where it is exposed. If the resist_is a positive resist, the exposed region_of resist becomes divided_or_softened. After the exposure to the radiation,_the_unpolymerized_regions_may be dissolved_by applying