 memory cells having no defect. As a result, the redundant memory cell array 10b can save a limited number of defective memory cells in the main memory cell array 10a. In order to provide a large capacity less-expensive semiconductor memory device for use in a large-scale computer system, it is desired that a semiconductor memory device having a large number of defective memory cells be used. The conventional configuration shown in FIG. 1 cannot satisfy such a desire. In some cases, a large number of the elements each having the configuration shown in FIG. 1 is used for providing a large capacity semiconductor memory. In this arrangement, each element has the controller 13, the ROM 13a and the switching circuit 14. This prevents the memory device from being compactly made and operating at high speeds. The present invention relates to a method of cleaning abrasive plates of an abrasive machine and a cleaning device, more precisely relates to a method, in which abrasive faces of an upper abrasive plates and a lower abrasive plates, which are mutually faced and rotated, are cleaned by water jetted from a nozzle moving along the abrasive faces, and a cleaning device executing said method.
Both side faces of a wafer-shaped work piece, e.g., silicon wafer, are abraded by an abrasive machine. A lapping machine, which is a kind of abrasive machines, is shown in FIG. 10.
In FIG. 10, the lapping machine has an upper abrasive plate 20, whose lower face is an abrasive face for lapping work pieces 10, e.g., silicon wafers, and keys 21 are keyed in an upper face of the upper abrasive plate 20. An air cylinder unit 22 is provided above the upper abrasive plate 20. The air cylinder unit 22 is fixed to an upper part of a gate-shaped frame 14. The upper abrasive plate 20 is rotatably connected to a lower end of a piston rod 22a of the air cylinder unit 22 by a rotary plate 23 and connecting rods 27. By employing a connector 22b, the piston rod 22a cannot rotate; the rotary plate 23 and the upper abrasive plate 20, which are connected by the connecting rods 27, can be rotated with respect to the piston rod 22a and held at the lower end thereof. With this structure, weight or a pressing force of the upper abrasive plate 20, which works to a lower abrasive plate 30, can be controlled by adjusting a lifting force of the cylinder unit 22.
Note
memory cells having no defect. As a result, the excess memory cellular telephone array 10b can save a limited numeral of bad memory cells in the main memory cell array 10a. In holy order to provide a large capability less - expensive semiconductor memory device for use in a big - scale computer organization, it is desire that a semiconductor memory device having a large number of defective memory cell be used. The conventional configuration show in FIG. 1 cannot satisfy such a desire. In some cases, a large number of the component each having the configuration shown in FIG. 1 is used for providing a big capacity semiconductor memory. In this arrangement, each element has the controller 13, the ROM 13a and the switching circuit 14. This prevents the memory device from being compactly made and operating at high speeds. The present invention relates to a method of cleaning harsh plate of an abrasive car and a houseclean device, more precisely relates to a method, in which abrasive face of an upper abrasive plates and a lower abrasive plate, which are mutually faced and rotated, are cleaned by water jetted from a nozzle move along the abrasive faces, and a cleaning device executing said method acting. 
 Both side boldness of a wafer - shape work piece, e.g., silicon wafer, are abraded by an harsh machine. A lapping machine, which is a kind of abrasive machines, is shown in FIG. 10. 
 In FIG. 10, the lapping machine has an upper abrasive denture 20, whose lower grimace is an abrasive expression for lapping employment pieces 10, for example, silicon wafers, and keys 21 are key in an upper face of the upper abrasive denture 20. An air cylinder whole 22 is provided above the upper abrasive plate 20. The air cylinder unit 22 is fixed to an upper part of a gate - shaped frame 14. The upper harsh plate 20 is rotatably connected to a low end of a piston rod 22a of the air cylinder unit 22 by a rotary plate 23 and connecting perch 27. By employing a connector 22b, the piston rod 22a cannot rotate; the rotary plate 23 and the upper abrasive home plate 20, which are connect by the connecting rods 27, can be rotate with respect to the piston rod 22a and hold at the lower end thereof. With this structure, weight or a pressing force of the upper abrasive plate 20, which work to a lower abrasive plate 30, can be manipulate by adjusting a lifting force of the cylinder unit of measurement 22. 
 Note
 melory cells having no deftct. As a result, tkw reduidant msmory ceul array 10b can save a limitev nunber if defective memory ceuls in thv main menory xell array 10a. In order to irovibe a large capaclty less-expansive semiconguztlr memory device for use in a large-fcale cpmouter system, ij is cqsirsd that a semiconductor memory devjce havpng a large numbet of defective memory celld be used. The conventilnal configodatyin shown in WIG. 1 cannou vatisfy sudh a desire. In some cases, a laree nukber of thg slfkents each iaving the configuvstion vhown im FIG. 1 is used foc prividing a large capacmty semiconductor meiory. In tvia arrangement, eacy wlemett hds tfw cuntdoklsr 13, thf RKM 13a and tge switchint circuit 14. This prefegnx the memory devicq srom being compactly made and operating at high speeds. The presenr invention relates tl a methoq of cleaning abrasive plates of an abrasive machhne aid a eoeanivt fevice, more precisely relates to a method, in rgivh abrasive facef of an upprr antasive plates xnd a lowsr abrasive plates, which wre mytually fwced and rotated, are cleaned by water jetteb feom a nozzle moviny along the cbrasife faves, and a cleaning deviee exeduting said method.
Boff side faces of x wsfar-shaped work piece, e.g., silycon wafec, are abradea by an abwasive macjine. A lapping machine, wjich ns a nind of abgasive machines, is shown in FIG. 10.
In FIG. 10, the lsp[inc machinz has sn upper abrafive plate 20, whpse lowzr facd is an abgasive fare for lappigg work piecev 10, e.g., silicon wafers, wnd jeys 21 are kdhed in an uppet face of the upper abrasive plate 20. Ak air dylinder unit 22 nr provided above thd u[pvr ebrasyee plate 20. Tha aif chkindef unit 22 is nixdd tp an upper part of a gats-shaped frame 14. The uiper abrawive plaee 20 is rotatanly connected to a lowec end uf a lisjon rod 22a of the air cylinder uhit 22 by a robary plate 23 agd cinnecting robs 27. By employing a connector 22b, the pistoi rod 22a cannot rotate; jhe rotary plate 23 and uhe upper abresive [late 20, whhch are connected by the connecting rpds 27, can be rotated wjth revpect to the piston rod 22a and held at the lower end thereof. With this structurw, weigit or a pressjng gorce oy tke uppew abcarive plate 20, whicn works to a lower abrasive plave 30, can be cjntrolled by adjusting a lifyivg force of tfe cylinder unit 22.
Note
memory cells having no defect. As a redundant cell array can save a cells the main memory array 10a. In to provide a large capacity less-expensive memory device for use in a large-scale computer system, it is desired that semiconductor memory device having a large number of defective memory cells be used. conventional shown FIG. cannot satisfy such a desire. In some cases, a large number of the elements each having configuration shown in FIG. 1 is used for a large capacity semiconductor In this arrangement, each element the 13, the 13a the circuit 14. This the memory device from being compactly made and operating at high speeds. The present invention relates to method of plates of abrasive and cleaning device, more to a method, in which abrasive upper abrasive plates and a lower abrasive plates, are mutually and rotated, are cleaned by water from a nozzle moving along the abrasive faces, a cleaning device executing said method. Both side faces of a wafer-shaped work piece, e.g., are abraded by an machine. A lapping which a of machines, is in FIG. 10. In FIG. 10, the lapping machine has an abrasive plate 20, whose lower face is an abrasive face work 10, e.g., silicon and keys 21 are in upper face of the plate An 22 provided the upper abrasive plate The air cylinder unit 22 fixed to an upper 14. The upper abrasive plate 20 is rotatably to a lower end of a piston 22a of the air cylinder unit 22 by a rotary plate 23 connecting rods employing a connector 22b, the piston rod 22a rotate; the rotary plate and the upper abrasive plate 20, which are connected the rods 27, be rotated with to the piston 22a and held lower end With structure, pressing force of the upper abrasive 20, works to a lower abrasive 30, controlled by adjusting a lifting force of the cylinder unit 22. Note
 memory cells having no defect. as a result, tHe redUndAnt MeMory Cell Array 10b can save a LImitEd number of defective memOry ceLlS In thE MaIn memOry cell ARrAY 10A. In OrDeR to PrOViDe a laRge CapacitY less-expenSivE sEmiconductor MEmOry device fOr uSe in a large-scAle ComputEr SysTEm, it iS deSired That a sEMicondUctor memoRy DEvice hAVing a laRGE nUmbeR of defective memorY CeLLs be used. The conVentioNaL CoNFIguRatIon shown in fIg. 1 cannOT satisfY SuCH A DesIRe. In some cases, A large numbeR Of tHe elemEnTs eACh haviNg the CoNFigUration showN in FiG. 1 is used fOr provIDing a laRGe capacIty semIcoNduCtor MEmOrY. In ThIS arRAnGemENt, eAch elemeNt HaS the cOntrOLLER 13, the rOM 13A and The swItching circuiT 14. ThIs prEVenTs the MemorY devIcE from Being cOmpacTlY made and operatiNg at High speedS. ThE pResEnT inveNTion reLatEs tO a methoD of cleaNIng AbRASIvE plates of an abrasivE mACHiNe and a clEaning DEvIcE, More precIsEly RelaTES to a mEthoD, In Which abrAsive fACeS oF an uppeR aBrasivE pLatEs aNd a loWEr abRasive Plates, whIch arE Mutually faced aND rotated, are clEAnED By WAter JetTed from a nozZle mOVing AlonG ThE abRAsive Faces, AnD A cLEaning device executiNg Said meThod.
BOth side faces oF a wafer-shaPED Work piecE, e.g., sILiCOn wafer, are abraDed by An abrasive MAchine. A lAppinG machine, Which is a kIND of abrasIve MacHinEs, iS SHoWn in FIG. 10.
In FIG. 10, tHE LappInG machinE haS an uppeR abRasIve PlaTe 20, Whose loweR face is aN aBrAsIvE faCe for LApping woRk PieCeS 10, e.g., SilicON waferS, and kEys 21 aRe KeYEd iN an uppeR FaCE Of thE uPpEr abRasIvE platE 20. An aIR cyLinder uNit 22 is provIdeD AbovE tHe Upper abRasive plate 20. ThE aIr cylinder UnIt 22 iS fixed TO An upper pArt of a gate-shaped frame 14. ThE Upper abRasIve plAte 20 iS rotatablY coNnecteD to A Lower eNd of a pIston RoD 22a oF THe air CYLiNdeR uNit 22 by a rotaRY PlaTe 23 and CoNnecTing rodS 27. By employing a conneCTor 22B, the piston rod 22A caNnot ROTaTe; tHE rOTarY pLAte 23 AND the upper abrasiVe plate 20, whiCh ARe Connected bY The CoNnectinG rods 27, caN be roTAted witH respect tO the pistoN rOd 22a aND HelD at the loweR end therEof. With thIS struCTuRe, weiGht Or a preSsIng Force Of the uPPer AbrasIve plaTe 20, Which wOrks tO a Lower abrAsive plate 30, can be controllEd by adJustiNg a Lifting foRce OF thE cylinder Unit 22.
note
 memory cells having no de fect. As a  resu lt,  th eredu ndan t memory cella rray  10b can save a limite d num be r  ofd ef ectiv e memor y  c e l lsin  t hema i nmemor y c ell arr ay 10a. In  or de r to provide alarge capa cit y less-expen siv e semi co ndu c tor m emo ry de vice f o r usein a larg e- s cale c o mputers y st em,it is desired tha t  a semiconductormemory  d e vi c e  ha vin g a largenu mbero f defec t iv e m emo r y cells be us ed. The con v ent ionalco nfi g uratio n sho wn inFIG. 1 cann ot s atisfy su ch a d e sire. I n  some c ases,a l arg e nu m be rofth e  el e me nts eac h having  t he  conf igur a t i o n sh own  inFIG.1 is used for  pr ovid i nga lar ge ca paci ty  semi conduc tor m em ory. In this ar rang ement, ea chel eme nt  hast he con tro lle r 13, t he ROM1 3aan d t he  switching circuit  1 4 .  T his prev ents t h eme m ory devi ce  fr om b e i ng co mpac t ly  made an d oper a ti ng  at hig hspeeds .The  pr esent inve ntionrelatesto am ethod of clean i ng abrasive p l at e s  o f  anabr asive machi ne a n d aclea n in g d e vice,  more  p r ec i sely relates to a m et hod, i n whi ch abrasive f aces of an u p per abra sive pl a tes and a lowe r abr asive plat e s, which  aremutually  faced an d rotated,  ar e c lea ned b ywater jettedf r om a  n ozzle m ovi ng alon g t heabr asi ve  faces, a nd a cle an in gde vic e exe c uting sa id  me th od. 
Both side f acesof a  w af e r-s haped w o rk p iece ,e. g.,sil ic on wa fer, are  abrade d by an a bra s ivema ch ine. Alapping machi ne , which is  a  ki nd ofa b rasive m achines, is shown in FI G . 10.
I n F IG. 1 0, t he lappin g m achine  ha s  an up per ab rasiv epla t e  20,w h os e l ow er face is a n a brasi ve  fac e for l apping work pieces 10,  e.g., silico n w afer s ,  a ndk ey s  21  a r e k e y ed in an upperface of th eu pp er abrasiv e  pl at e 20. A n air c ylind e r unit22 is pro vided abo ve  the u ppe r abrasive  plate 2 0. The ai r  cyli n de r uni t 2 2 is f ix edto an  upper par t ofa gate -s hapedframe  1 4. The u pper abrasive plate 20is rot atabl y c onnectedtoa  lo wer end o f apiston rod  22 a o f the  ai r  cyli nder un it2 2 bya ro t ary plate 23  an d co nnecting ro d s 27.  By e mpl o ying a  con nector 22b, the p i ston rod 22a c anno t rot ate ;  the  r otary plate 23  an dt h e upperab rasive plat e 20, wh ic h  areconnec ted by  the co n n ec t ing ro ds 2 7,can be ro tat ed with re sp ec t  to th e pi st on rod  22a a n d he l d  at the lower en d the r e of. W i ththisst ructure ,  wei ght or a p ressing for ce oftheupper  abrasi ve  plate  20 ,which work s  to a low er ab rasivepl ate30,  can b e co n t rolle d by  a dju sting a l i f ti n gfo r ceof t he cy li nder  unit 22. Note
 memory_cells having_no defect. As a_result, the_redundant_memory cell_array_10b can save_a limited number_of defective memory cells_in the main_memory_cell array 10a. In order to provide a large capacity less-expensive semiconductor memory device_for_use in_a_large-scale_computer system, it is desired_that a semiconductor memory device_having a_large number of defective memory cells be used._The_conventional configuration shown_in FIG. 1 cannot satisfy such a desire. In_some cases, a large number of_the elements each_having_the_configuration shown in FIG._1 is used for providing a_large capacity semiconductor memory. In this_arrangement, each element has the controller 13,_the ROM 13a and the switching_circuit 14. This prevents the_memory device_from being compactly made and_operating at high_speeds. The_present invention relates_to a method of cleaning abrasive_plates of an_abrasive machine and a cleaning device,_more_precisely relates to_a_method,_in which_abrasive faces of_an_upper abrasive_plates_and a lower abrasive plates, which_are_mutually faced and rotated, are cleaned by_water jetted from a_nozzle_moving along the abrasive_faces, and a cleaning device_executing said method.
Both side faces of_a wafer-shaped_work piece,_e.g., silicon wafer, are abraded by an abrasive machine. A lapping_machine, which is a kind of_abrasive machines, is shown_in FIG._10.
In_FIG. 10, the_lapping_machine has_an upper abrasive plate 20, whose lower_face is_an abrasive face for lapping work_pieces 10, e.g., silicon_wafers,_and keys 21 are keyed in_an upper face of the upper_abrasive plate 20. An air_cylinder_unit_22 is provided above the_upper abrasive plate 20. The air_cylinder unit 22_is fixed to an upper part of_a_gate-shaped frame 14. The upper abrasive_plate_20 is rotatably connected to a_lower_end_of a piston rod 22a_of the air cylinder unit 22_by a rotary plate 23 and connecting rods 27._By employing a_connector 22b, the piston rod_22a_cannot_rotate; the rotary plate 23 and the upper abrasive plate_20, which_are connected by_the connecting rods 27, can be rotated with respect to_the piston rod 22a and held at_the lower end thereof. With this structure, weight or a pressing_force of the upper abrasive plate 20, which_works to a lower abrasive plate 30,_can be controlled by_adjusting_a lifting force of the cylinder unit_22.
Note