 the silicon wafer in the thickness direction, and the other region only serves as a support which has conductivity. Further, loss of a material used as a cutting margin which is required in cutting out the silicon wafer from an ingot, necessity of a polishing step, and the like are also the factors that prevent a decrease in cost of the bulk silicon photoelectric conversion devices.
On the other hand, a thin film silicon photoelectric conversion device can be formed by forming a silicon thin film using a required amount of silicon by a plasma CVD method or the like. In addition, by a laser method, a screen printing method, or the like, higher integration of a thin film silicon photoelectric conversion device is easy, and the thin film silicon photoelectric conversion device can be manufactured at lower cost than the bulk silicon photoelectric conversion device. However, the thin film silicon photoelectric conversion device has a disadvantage in that it has a lower conversion efficiency than the bulk silicon photoelectric conversion device.
In order to improve the conversion efficiency of the thin film silicon photoelectric conversion device, a method in which silicon oxide is used instead of silicon for a p-type semiconductor layer serving as a window layer has been suggested (e.g., Patent Document 1). A thin film of a non-single-crystal silicon based p-type semiconductor has a high light absorption coefficient, so that it hinders light absorption by an i-type semiconductor layer. In Patent Document 1, silicon oxide, which has a larger band gap than silicon, is used for a p-type semiconductor layer so as to suppress light absorption by the window layer.
In addition, a structure in which an inversion layer which is formed by a field effect is used instead of a p-type semiconductor layer or an n-type semiconductor layer which serves as a window layer has been suggested. In such a structure, by forming a light-transmitting dielectric or conductor over an n-i or p-i structure, an n-i-p or p-i-n junction can be formed when an electric field is applied. This structure is for the purpose of reducing loss of light due to light absorption by the window layer as much as possible in order to increase a light-absorption efficiency of the i-type semiconductor layer.    [Patent Document 1] Japanese Published Patent Application No. H07-130661 In recent years, many commercial shows of holographic display are implemented in a quasi-holographic way, in which a projector or any other means is used to form an image
the silicon wafer in the thickness direction, and the other region only serve as a documentation which has conductivity. Further, passing of a material used as a cut margin which is required in cut out the silicon wafer from an ingot, necessity of a polishing step, and the comparable are also the factors that prevent a decrease in price of the bulk silicon photoelectric conversion device. 
 On the other bridge player, a thin film silicon photoelectric conversion device can be form by forming a silicon thin film use a required amount of silicon by a plasma CVD method or the like. In accession, by a laser method, a screen printing method, or the like, high integration of a thin film silicon photoelectric conversion device is easy, and the thin film silicon photoelectric conversion device can be manufactured at lower cost than the bulk silicon photoelectric conversion device. However, the thin film silicon photoelectric conversion device has a disadvantage in that it has a lower conversion efficiency than the bulk silicon photoelectric conversion device. 
 In order to improve the conversion efficiency of the thin film silicon photoelectric conversion device, a method acting in which silicon oxide is use instead of silicon for a phosphorus - character semiconductor layer serving as a window level has been suggested (for example, Patent Document 1). A thin film of a non - single - quartz glass silicon based p - type semiconductor has a high sparkle absorption coefficient, so that it hinders light absorption by an one - type semiconductor device layer. In Patent Document 1, silicon oxide, which has a larger band gap than silicon, is used for a phosphorus - type semiconductor layer so as to suppress light absorption by the window layer. 
 In addition, a social organization in which an inversion layer which is formed by a field effect is use instead of a phosphorus - type semiconductor layer or an n - type semiconductor device layer which serves as a window level has been suggested. In such a structure, by forming a light - transmitting dielectric or conductor over an n - i or p - i structure, an n - i - p or p - i - nitrogen junction can be formed when an electric battlefield is applied. This structure is for the purpose of reducing loss of light due to faint absorption by the window layer as much as possible in order to increase a faint - assimilation efficiency of the i - type semiconductor layer.     [ Patent Document 1 ] Japanese Published Patent Application No. H07 - 130661 In recent years, many commercial shows of holographic display are implement in a quasi - holographic way, in which a projector or any other means is use to form an image
 thf silicon wafer in the tmickness direction, and vhe othsr regiov only serves as a support wiich has xonductivity. Further, luss of a laterial usev as a cutting medgin whleh is vequixev in cutting ouj the silicot wafer from at knyot, necessity of a polishing step, anq the lokf are also the facuorf thzn krevent a decrease in cost of the bulk splicon photoelecttic conversion devices.
On tje ohher hand, a thin fllm silicon phoeielectric covversion dtvnce can be rormed by forming a silicon thiv filk using a tzwuiggd amount of silibon by a plasma CVD mathod ot the like. In sddmtiob, by a laser method, a screen printing mgthod, or tve like, higher intetrqtion of d thkb fklm smlidon phltoxlectric cohversion decice is easy, and tht trpm film silickn phoeoqlectric conversion device can be manufdcthred at lower cost than the bulk silicon phojoelectric conversion device. However, the thin film silicon [hotoxldctxlg covcegsion device has a disadvantage in that it haf a lpwer conversiok efficiency than yhf nolk silicon phutoeleefrjc conversion devife.
In orqer ti improve the conversion efficiency of tye thin film wilicon photoelectxic conversiun dgvice, s method in which silicun oside is usef instead uf silicon for a p-tjpe vemiconductor layer servind as a wiidow kayer hxs bgen sugdested (e.g., Oatenb Document 1). A thin vilm lf a non-singpe-crystal silicon based p-type sxkiconductor nav a high liyht abxorption coefsicient, so thaj it hindzrs lieht absorpnion by ai i-type semisonductor layat. In Patent Dmcument 1, silucon oxide, dfich has a larber band ycp than sulicon, is used for a k-tgpe semiconductir oayer so as to xuporefs lmght wtsorption by the wivcow lxyer.
In addibiov, a xtructure in which at inbersion layer whicn ls formed by a fiqld effect is used instead of a p-typx semironducyor layer or an n-type semiconductkr layer ahigh serves as w wikdow layer has been suggested. In such a structure, by horming a light-transmijting dielectric or cpkductor over an n-y or p-i sdructure, an n-i-p or p-u-n junction can bt formed when an electrjc fiend is applied. This structure is for the purpose of reducing loss of light due ro ligit absorption by yhe wpndjc layer as lnch as possible im order to increase a light-absocption effhcnency of the i-type semiconducyof layer.    [Pajent Document 1] Japanese Puglished Latent Application No. H07-130661 In recemt years, many commercial shows od holkgraphpd visplay are implemenyed in a quqsi-holotrapmic way, in whizh s irojector lr aiy kther means is used to form an inage
the silicon wafer in the thickness direction, other only serves a support which a used as a margin which is in cutting out the silicon wafer an ingot, necessity of a polishing step, and the like are also the that prevent a decrease in cost of the bulk silicon photoelectric conversion devices. the hand, thin silicon photoelectric conversion device can be formed by forming a silicon thin film using a required of silicon by a plasma CVD method or like. In addition, by laser method, a screen printing or like, higher of thin silicon photoelectric conversion is easy, and the thin film silicon photoelectric conversion device can be manufactured at lower cost than bulk silicon device. However, thin silicon conversion device has in that it has a lower the bulk silicon photoelectric conversion device. In order improve the efficiency of the thin film silicon conversion device, a method in which silicon oxide used instead of silicon for a p-type semiconductor layer serving as a window layer has (e.g., Patent Document 1). thin film of non-single-crystal based semiconductor a high absorption coefficient, so that it hinders light absorption by an i-type layer. In Patent Document 1, silicon oxide, which has a gap silicon, is used a p-type semiconductor layer as suppress light absorption by layer. addition, which inversion which is formed by field effect is used instead a p-type semiconductor layer which serves as a window layer has been In such a structure, by forming a dielectric or conductor over an n-i or p-i structure, an n-i-p or junction can when an electric field is applied. This structure for the purpose of loss of light due to light absorption by the layer much as in order to a light-absorption efficiency the i-type semiconductor Document 1] Published Application recent years, many commercial shows of display implemented in a quasi-holographic way, which or any other means is used to form an image
 the silicon wafer in the thickNess directIon, anD thE otHeR regIon oNly serves as a suPPort Which has conductivity. FuRther, LoSS of a MAtErial Used as a CUtTINg mArGiN whIcH Is RequiRed In cuttiNg out the siLicOn Wafer from an iNGoT, necessity Of a Polishing steP, anD the liKe Are ALso thE faCtors That prEVent a dEcrease in CoST of the BUlk siliCON pHotoElectric conversioN DeVIces.
On the other Hand, a tHiN FiLM SilIcoN photoelecTrIc conVErsion dEViCE CAn bE Formed by formiNg a silicon tHIn fIlm usiNg A reQUired aMount Of SIliCon by a plasmA CVD Method or tHe like. iN additiON, by a lasEr methOd, a ScrEen pRInTiNg mEtHOd, oR ThE liKE, hiGher inteGrAtIon of A thiN FILM silIcoN phoToeleCtric conversiOn dEvicE Is eAsy, anD the tHin fIlM siliCon phoToeleCtRic conversion deVice Can be manuFacTuRed At Lower COst thaN thE buLk silicOn photoELecTrIC COnVersion device. HowevEr, THE tHin film sIlicon PHoToELectric cOnVerSion DEVice hAs a dISaDvantage In that IT hAs A lower cOnVersioN eFfiCieNcy thAN the Bulk siLicon phoToeleCTric conversion DEvice.
In order tO ImPROvE The cOnvErsion efficIencY Of thE thiN FiLm sILicon PhotoElECtRIc conversion device, a MeThod in Which Silicon oxide iS used insteAD OF silicon For a P-TyPE semiconductor Layer Serving as a WIndow layEr has Been suggEsted (e.g., PaTENt DocumeNt 1). A ThiN fiLm oF A NoN-single-crystaL SIlicOn Based p-tYpe SemiconDucTor Has A hiGh Light absoRption coEfFiCiEnT, so That iT Hinders lIgHt aBsOrpTion bY An i-typE semiCondUcToR LayEr. In PatENt dOCumeNt 1, SiLicoN oxIdE, whicH has A LarGer band Gap than siLicON, is uSeD fOr a p-typE semiconductoR lAyer so as to SuPprEss ligHT AbsorptiOn by the window layer.
In addITion, a stRucTure iN whiCh an inverSioN layer WhiCH is forMed by a Field EfFecT IS used INStEad Of A p-type semiCONduCtor lAyEr or An n-type Semiconductor layer WHicH serves as a winDow LayeR HAs BeeN SuGGesTeD. in sUCH a structure, by foRming a lighT-tRAnSmitting diELecTrIc or conDuctor oVer an N-I or p-i stRucture, an N-i-p or p-i-n jUnCtioN CAn bE formed wheN an electRic field iS AppliED. THis stRucTure is FoR thE purpOse of rEDucIng loSs of liGhT due to Light AbSorption By the window layer as much aS possiBle in OrdEr to increAse A LigHt-absorptIon eFficiency oF thE i-tYpe seMicONductOr laYEr.    [patENt DocUmenT 1] japanese PUBlIshED paTent ApplicaTION No. h07-130661 In reCenT Years, mAny cOmmercial shows of hOLographic displAy arE IMplEmeNTed iN a Quasi-holographIc wAy, IN Which a prOjEctor or any oTher meanS iS Used tO form aN image
 the silicon wafer in thethicknessdirec tio n,an d th e ot her region onl y  ser ves as a support which  hasco n duct i vi ty. F urther, lo s s  of  a  m ate ri a lusedasa cutti ng marginwhi ch  is required in  cutting o utthe siliconwaf er fro mani ngot,  ne cessi ty ofa  polis hing step ,a nd the like ar e al so t he factors that p r ev e nt a decreasein cos to ft h e b ulk  silicon p ho toele c tric co n ve r s i ond evices.
On th e other han d , a  thinfi lms ilicon  phot oe l ect ric convers iondevice ca n be f o rmed by forming  a sil ico n t hinf il musi ng a r e qu ire d  am ount ofsi li con b y ap l a s ma C VDmeth od or  the like. In  ad diti o n,by alaser  met ho d, ascreen  prin ti ng method, or t he l ike, high erin teg ra tiono f a th infil m silic on phot o ele ct r i c  c onversion device i se a sy , and th e thin fi lm siliconph oto elec t r ic co nver s io n device  can b e  m an ufactur ed  at lo we r c ost  than thebulk s ilicon p hotoe l ectric convers i on device. Ho w ev e r ,t he t hin  film silic on p h otoe lect r ic  co n versi on de vi c eh as a disadvantage i nthat i t has  a lower conv ersion eff i c i ency tha n th e  b u lk silicon pho toele ctric conv e rsion de vice. 
In orde r to impr o v e the co nve rsi oneff i c ie ncy of the th i n  fil msilicon  ph otoelec tri c c onv ers io n device,  a metho din  w hi chsilic o n oxideis  us ed  in stead of sil iconforap- t ype  semico n du c t or l ay er  ser vin gas awind o w l ayer ha s been su gge s ted(e .g ., Pate nt Document 1 ).  A thin fi lm  of  a non - s ingle-cr ystal silicon based p-t y pe semi con ducto r ha s a highlig ht abs orp t ion co effici ent,so  th a t  it h i n de rsli ght absorp t i onby an  i -typ e semic onductor layer. In Pat ent Document1,sili c o noxi d e, whi ch has a  larger band ga p than sil ic o n,  is used f o r a  p -type s emicond uctor layer s o as to s uppress l ig ht a b s orp tion by th e window  layer.
I n  addi t io n, astr ucture  i n w hichan inv e rsi on la yer wh ic h is f ormed  b y a fiel d effect is used instea d of a  p-ty pesemicondu cto r  la yer or an  n-t ype semico ndu cto r lay erw hichserv e sasa  wind ow l a yer has b e en  su g g es ted. In suc h a  st ructu re, by for ming  a light-transmit t ing dielectric  orc o ndu cto r  ove ran n-i or p-istr uc t u re, an n -i -p or p-i-n  junctio nc an be  forme d when  an ele c t ri c  field  isapp lied. Thi s s tr u cture i sfo r  the p urpo se  of re ducing loss o f light due to l ighta b sorpt i onby th ewindowl ayer  as much a s possiblein ord er t o inc rease a  l ight-a bso rp tion effic i ency of t he i- type se mi cond uct or lay er. [Pat entDo cum ent 1] Ja p a ne s ePu b lis hedPaten tAppl ication N o . H07-13 066 1  In rec en t y e a rs, ma n yc o mmercial s how s ofh o lographicd ispl a ya re im plemen ted in  a quas i -ho lo graphic  wa y ,  in which  a projec t oror  any  other m ea ns i suse dto form an imag e
 the_silicon wafer_in the thickness direction,_and the_other_region only_serves_as a support_which has conductivity._Further, loss of a_material used as_a_cutting margin which is required in cutting out the silicon wafer from an ingot,_necessity_of a_polishing_step,_and the like are also_the factors that prevent a_decrease in_cost of the bulk silicon photoelectric conversion devices.
On_the_other hand, a_thin film silicon photoelectric conversion device can be formed_by forming a silicon thin film_using a required_amount_of_silicon by a plasma_CVD method or the like. In_addition, by a laser method, a_screen printing method, or the like, higher_integration of a thin film silicon_photoelectric conversion device is easy,_and the_thin film silicon photoelectric conversion_device can be_manufactured at_lower cost than_the bulk silicon photoelectric conversion device._However, the thin_film silicon photoelectric conversion device has_a_disadvantage in that_it_has_a lower_conversion efficiency than_the_bulk silicon_photoelectric_conversion device.
In order to improve the_conversion_efficiency of the thin film silicon photoelectric_conversion device, a method_in_which silicon oxide is_used instead of silicon for_a p-type semiconductor layer serving as_a window_layer has_been suggested (e.g., Patent Document 1). A thin film of a_non-single-crystal silicon based p-type semiconductor has_a high light absorption_coefficient, so_that_it hinders light_absorption_by an_i-type semiconductor layer. In Patent Document 1,_silicon oxide,_which has a larger band gap_than silicon, is used_for_a p-type semiconductor layer so as_to suppress light absorption by the_window layer.
In addition, a structure_in_which_an inversion layer which is_formed by a field effect is_used instead of_a p-type semiconductor layer or an n-type_semiconductor_layer which serves as a window_layer_has been suggested. In such a_structure,_by_forming a light-transmitting dielectric or_conductor over an n-i or p-i_structure, an n-i-p or p-i-n junction can be formed_when an electric_field is applied. This structure_is_for_the purpose of reducing loss of light due to light_absorption by_the window layer_as much as possible in order to increase a light-absorption_efficiency of the i-type semiconductor layer. _  [Patent Document 1] Japanese Published Patent Application No. H07-130661_In recent years, many commercial shows of holographic_display are implemented in a quasi-holographic way,_in which a projector_or_any other means is used to form_an_image