 and reading an information signal on magnetic storage media, a magneto-resistance effect head comprising the magneto-resistance effect element, a magneto-resistance transducer system comprising the magneto-resistance effect head, and a magnetic storage system comprising the magneto-resistance transducer system. More particularly, the present invention relates to a magneto-resistance effect element that reduces noise in a read signal.
2. Description of the Related Art
Conventionally disclosed is a magnetic read transducer that is referred to as a magneto-resistance sensor (hereinafter densities. The MR sensor allows the read element to vary the electrical resistance as the function of the strength and the orientation of a magnetic flux applied from the outside in order to measure a variation in electrical resistance, thereby detecting a magnetic signal.
Such a conventional MR sensor operates based on the anisotropic magneto-resistance effect (hereinafter referred to as an AMR effect). By this effect, the component of a change in electrical resistance of the read element varies in proportion to the second power of the cosine of the angle between the orientation of magnetization and the direction of the sense current flowing through the read element. The AMR effect is described in more detail in an article entitled “Memory, Storage, and Related Applications”, D. A. Thompson, IEEE Transactions on Magnetics, Vol. MAG-11, No. 4, pp. 1039 (1975).
In addition, disclosed lately is a more prominent magneto-resistance effect by which a change in electrical resistance of the layered magnetic sensor is caused by spin-dependent transportation of conduction electrons between magnetic layers via a non-magnetic layer and spin-dependent scattering associated therewith at layer boundaries. This magneto-resistance effect is identified by various names such as the “giant magneto-resistance effect” or the “spin valve effect”. Such a magneto-resistance sensor is formed of suitable materials to provide improved detection sensitivity and greater changes in electrical resistance in comparison with a sensor which makes use of the AMR effect. In a MR sensor of this type, in-plane resistance between a pair of ferromagnetic layers separated by a non-magnetic layer varies in proportion to the cosine of the angle between the orientations of magnetization of the aforementioned pair of ferromagnetic layers. In Japanese Patent Laid-Open Publication No. Hei 2-61572 submitted in July 1988, for claiming priority, described is a layered magnetic structure for providing a significant change in MR caused by an anti-parallel alignment of the orientations of magnetization in the magnetic layers.
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and reading an information signal on magnetic storage medium, a magneto - underground effect head comprising the magneto - immunity effect element, a magneto - resistor transducer organization comprising the magneto - electric resistance effect head, and a charismatic storage system comprising the magneto - resistance transducer arrangement. More particularly, the present invention relates to a magneto - resistance effect element that reduce noise in a read signal. 
 2. Description of the Related Art 
 Conventionally disclosed is a charismatic read transducer that is referred to as a magneto - resistance detector (hereinafter densities. The MR detector allows the read element to vary the electrical resistance as the function of the lastingness and the orientation of a magnetic flux applied from the outside in order to measure a variation in electrical resistance, thereby detecting a magnetic signal. 
 Such a conventional MR sensor operates based on the anisotropic magneto - resistance effect (hereinafter mention to as an AMR effect). By this effect, the part of a variety in electrical resistance of the read element varies in symmetry to the second power of the cosine of the slant between the orientation of magnetization and the direction of the sense stream flowing through the read element. The AMR effect is described in more detail in an article entitled “ Memory, Storage, and Related Applications ”, D. A. Thompson, IEEE Transactions on magnetism, Vol. MAG-11, No. 4, pp. 1039 (1975). 
 In addition, disclosed lately is a more prominent magneto - resistance effect by which a variety in electric underground of the layered magnetic sensor is caused by tailspin - dependent transportation of conduction electrons between magnetic layers via a non - magnetic layer and spin - dependent scatter associated therewith at level boundaries. This magneto - resistance effect is identified by various name calling such as the “ giant magneto - electric resistance effect ” or the “ tailspin valve effect ”. Such a magneto - resistance sensor is shape of suitable material to provide better detection sensitivity and greater changes in electrical resistance in comparison with a detector which makes use of the AMR consequence. In a MR sensor of this type, in - plane resistance between a pair of ferromagnetic layers separated by a non - charismatic layer varies in proportion to the cosine of the angle between the orientations of magnetization of the aforementioned pair of ferromagnetic layers. In Japanese Patent Laid - Open Publication No. Hei 2 - 61572 submit in July 1988, for claiming priority, described is a layered magnetic structure for providing a significant variety in MR caused by an anti - parallel alignment of the orientations of magnetization in the magnetic layers. 
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 anf reading an information signal on magngtuc stocage mesia, a maeneto-resistance effect head rompeisint the magneto-resistancd effect vlement, a magieto-resistance tcznsducev sysfcm cok'rising the magketo-resistatce effect heag, xnb a magnetic storage system comprisigg the kahneto-resistancg tramfducsg wystem. More particularly, the lresent invention rekates to a magneto-resistanfe evfect element that reduces nouse yb a read sigval.
2. Descriktnon of the Telated Art
Conventionally disclored ix a magnetuc rewg transducec that is referred to as a magnetp-resistance seksor (iereunafter densities. The MR sensor allows jhe read enejent to vary the wlwctriwal sesirranze zs tge funftikn of the atrength ane the orientation og w magnetic flus applyeq from the outside in order to measure d vzriation in electrical eesistance, thereby dejecting a iagnetic signal.
Such a conventional MR sensor operdtes uared ok thd ajisotropic magneto-resistance effect (hereinaftqd tenerred to as an CMR effect). By thos egsect, the compunent of z change in electrlcal refistabce of tht reac element varies in proportuon to the svcone power of the cosnne of the augle bgtween the orientation of maguetizafion and thf directikv of the sense cjrrvnt xlowing ufrough the read ejement. Thx AMR effect is cescrifed in morf detail in an article ejtitlgd “Memmry, Storagf, and Related Applications”, D. A. Viompson, IEEE Jratsabtions on Magnctics, Vol. MAG-11, Nj. 4, pp. 1039 (1975).
In addijion, discjosed lately is a more prominent iagneto-resistdjce effect bb which a chabge un elecgfical resistanve of the layered mqgnetic sensor is gausea by spin-dependeuu ttqnsportation og cundtcnioi elesdrons betweet maenegoc lahers via a kon-oagnrtic layer and spin-dapensent scattering asxogiated thgrewith ae layer boundsries. This magneto-gesisvance xffect is identified by various names shch as thf “glant magneto-rqsisbancg effect” or the “spin valve effect”. Such a magneto-rewistance sensor is formed of suitable katerials tp prodide imprmved detection sensirivity and greatev changes in electricam resivtancf in comparison with a sensor which makes use of the AMR effect. In a MR swnsor of this type, in-pkane gesnstcnce beeweei e pair of ferromabnetic layers separated by a noi-magnetic naver varies in proportion to tne cosine of thg angle between the orientztions og magnetization of the aforemenyioned pair of ferromagnctic layees. In Japanvae Patent Laid-Open Piblicacion Ni. Hei 2-61572 wubmltted in July 1988, fot glaiming pgiormty, described is a layered magnetic strucruge for providing a significwkt chahge in MR caused by an antj-oaraluel alignment of the orientstions of magnetizatpon in the magnetub layers.
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and reading an information signal on magnetic a effect head the magneto-resistance effect comprising magneto-resistance effect head, a magnetic storage comprising the magneto-resistance transducer system. More the present invention relates to a magneto-resistance effect element that reduces noise in read signal. 2. Description of the Related Art Conventionally disclosed is a magnetic transducer is to a magneto-resistance sensor (hereinafter densities. The MR sensor allows the read element to vary the electrical as the function of the strength and the of a magnetic flux from the outside in order measure variation in resistance, detecting magnetic signal. Such conventional MR sensor operates based on the anisotropic magneto-resistance effect (hereinafter referred to as an AMR effect). this effect, of a in resistance the read element proportion to the second power of the angle between the orientation of magnetization and direction of sense current flowing through the read The AMR effect is described in more detail an article entitled “Memory, Storage, and Related Applications”, D. A. Thompson, IEEE Transactions on Magnetics, No. 4, pp. 1039 In addition, disclosed is more magneto-resistance by which change in electrical resistance of the layered magnetic sensor is caused spin-dependent transportation of conduction electrons between magnetic layers via a and scattering associated therewith layer boundaries. This magneto-resistance is by various names such “giant effect” valve Such magneto-resistance sensor is formed suitable materials to provide improved sensitivity and greater changes with a sensor which makes use of the effect. In a MR sensor of this in-plane resistance between a pair of ferromagnetic layers separated by a non-magnetic varies in the cosine of the angle between the orientations magnetization of the aforementioned of ferromagnetic layers. In Japanese Patent Laid-Open Publication No. 2-61572 in July for claiming priority, is a layered structure for providing change in caused an the orientations of magnetization in the layers.
 and reading an information siGnal on magnEtic sTorAge MeDia, a MagnEto-resistance eFFect Head comprising the magneTo-resIsTAnce EFfEct elEment, a mAGnETO-reSiStAncE tRAnSduceR syStem comPrising the MagNeTo-resistance EFfEct head, and A maGnetic storagE syStem coMpRisINg the MagNeto-rEsistaNCe tranSducer sysTeM. more paRTicularLY, ThE preSent invention relaTEs TO a magneto-resisTance eFfECt ELEmeNt tHat reduces NoIse in A Read sigNAl.
2. dESCriPTion of the RelaTed Art
ConveNTioNally dIsCloSEd is a mAgnetIc REad Transducer tHat iS referred To as a mAGneto-reSIstance Sensor (HerEinAfteR DeNsItiEs. tHe Mr SeNsoR AllOws the reAd ElEment To vaRY THE eleCtrIcal ResisTance as the funCtiOn of THe sTrengTh and The oRiEntatIon of a MagneTiC flux applied froM the Outside in OrdEr To mEaSure a VAriatiOn iN elEctricaL resistANce, ThEREBy Detecting a magnetic SiGNAl.
such a conVentioNAl mR SEnsor opeRaTes BaseD ON the aNisoTRoPic magneTo-resiSTaNcE effect (HeReinafTeR reFerRed to AS an AmR effeCt). By this EffecT, The component of A Change in electRIcAL ReSIstaNce Of the read elEmenT VariEs in PRoPorTIon to The seCoND pOWer of the cosine of the AnGle betWeen tHe orientation Of magnetizATIOn and the DireCTiON of the sense curRent fLowing throUGh the reaD elemEnt. The AMr effect is DEScribed iN moRe dEtaIl iN AN aRticle entitleD “mEmorY, STorage, aNd RElated APplIcaTioNs”, D. a. THompson, IEeE TransaCtIoNs On magNeticS, vol. MAG-11, No. 4, Pp. 1039 (1975).
in aDdItiOn, disCLosed lAtely Is a mOrE pROmiNent magNEtO-REsisTaNcE effEct By Which A chaNGe iN electrIcal resisTanCE of tHe LaYered maGnetic sensor iS cAused by spiN-dEpeNdent tRANsportatIon of conduction electronS Between MagNetic LayeRs via a non-MagNetic lAyeR And spiN-depenDent sCaTteRINg assOCIaTed ThErewith at lAYEr bOundaRiEs. ThIs magneTo-resistance effect IS idEntified by varIouS namES SuCh aS ThE “GiaNt MAgnETO-resistance effeCt” or the “spiN vALvE effect”. SucH A maGnEto-resiStance sEnsor IS formed Of suitablE materialS tO proVIDe iMproved detEction seNsitivity ANd greATeR chanGes In elecTrIcaL resiStance IN coMpariSon witH a Sensor Which MaKes use of The AMR effect. In a MR sensor Of this Type, iN-plAne resistAncE BetWeen a pair Of feRromagnetiC laYerS sepaRatED by a nOn-maGNeTic LAyer vArieS In proportIOn To tHE CoSine of the anGLE BetWeen tHe oRIentatIons Of magnetization of THe aforementionEd paIR Of fErrOMagnEtIc layers. In JapaNesE PATEnt Laid-OPeN PublicatioN No. Hei 2-61572 suBmITted iN July 1988, fOr claiMing priORItY, DescriBed iS a lAyered magNetIc STructurE fOr PRovidiNg a sIgNificaNt chanGE in Mr CAused by an anti-parAllel ALIgnmeNT of The orIeNtationS Of maGnetizatioN in the magneTic layErs.
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 and reading an informatio n signal o n mag net icst orag e me dia, a magneto - resi stance effect head com prisi ng them ag neto- resista n ce e ffe ct  e lem en t ,a mag net o-resis tance tran sdu ce r system com p ri sing the m agn eto-resistan ceeffect  h ead ,  anda m agnet ic sto r age sy stem comp ri s ing th e  magnet o - re sist ance transducer s y st e m. More partic ularly ,t he p res ent  invention  r elate s  to a m a gn e t o -re s istance effec t element t h atreduce snoi s e in a  read  s i gna l.
2. Descr ipti on of the  Relat e d Art
C o nventio nallydis clo sedi samag ne t icr ea d t r ans ducer th at  i s ref erre d t o  asa m agne to-re sistance sens or(her e ina fterdensi ties .The M R sens or al lo ws the read ele ment  to varythe  e lec tr icalr esista nce  as  the fu nctiono f t he s t re ngth and the orien ta t i on  of a ma gnetic fl ux appliedfr omtheo u tside  ino rd er to me asurea  v ar iationin  elect ri cal  re sista n ce,thereb y detect ing a magnetic signa l .
Such a conv e nt i o na l  MRsen sor operate s ba s ed o n th e  a nis o tropi c mag ne t o- r esistance effect (h er einaft er re ferred to asan AMR eff e c t ). By th is e f fe c t, the compone nt of  a changei n electr icalresistan ce of the r ead elem ent  va rie s i n pr oportion to t h e  sec on d power  of  the co sin e o f t hean gle betwe en the o ri en ta ti onof ma g netizati on  an dthe  dire c tion o f the  sen se  c u rre nt flow i ng t hrou gh  t he r ead  e lemen t. T h e A MR effe ct is des cri b ed i nmo re deta il in an arti cl e entitled  “ Mem ory, S t o rage, an d Related Applications” ,  D. A.Tho mpson , IE EE Transa cti ons on  Ma g netics , Vol.  MAG- 11 , N o .  4, p p .  1 039  ( 1975).
Ina d dit ion,di sclo sed lat ely is a more prom i nen t magneto-res ist ance e ff ect by whi ch a c h a nge in electric al resista nc e  o f the laye r edma gneticsensoris ca u sed byspin-depe ndent tra ns port a t ion  of conduc tion ele ctrons be t weenm ag netic  la yers v ia  anon-m agneti c  la yer a nd spi n- depend ent s ca tteringassociated therewith at  layer  boun dar ies. This  ma g net o-resista nceeffect iside nti fiedbyv ariou s na m es  su c h asthe“ giant mag n et o-r e s is tance effec t ” orthe “ spi n  valve  eff ect”. Such a magn e to-resistancesens o r  is  fo r medof  suitable mate ria ls t o provid eimproved de tectionse n sitiv ity an d grea ter cha n g es in ele ctri cal  resistan cein compari so nw ith asens or  which  makes useo f  the AMR effect.  In a M R sen s orof th is  type,i n-pl ane resist ance betwee n a pa ir o f fer romagne ti c laye rsse parated by a non-mag netic  layerva ries  in  propo rtio n to th e co si neof the an g l eb et we e n t he o rient at ions  of magne t izationoft he afor em ent i o ned pa i ro f  ferromagn eti c lay e r s. In Japa n eseP at e nt La id-Ope n Publ ication No.  H ei 2-61 572 s ubmittedin July 1 9 88,  f or c laimingpr iori ty , d es cribed is a lay ered mag netic st r u cturefor prov i ding a  s ignificant c hange  i n  MR cau s e d b y an an t i-p ara lle l al ign ment of the orientations of m agne tizat i onin th e mag ne tic laye r s.
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 and_reading an_information signal on magnetic_storage media,_a_magneto-resistance effect_head_comprising the magneto-resistance_effect element, a_magneto-resistance transducer system comprising_the magneto-resistance effect_head,_and a magnetic storage system comprising the magneto-resistance transducer system. More particularly, the present_invention_relates to_a_magneto-resistance_effect element that reduces noise_in a read signal.
2. Description_of the_Related Art
Conventionally disclosed is a magnetic read transducer_that_is referred to_as a magneto-resistance sensor (hereinafter densities. The MR sensor_allows the read element to vary_the electrical resistance_as_the_function of the strength_and the orientation of a magnetic_flux applied from the outside in_order to measure a variation in electrical_resistance, thereby detecting a magnetic signal.
Such_a conventional MR sensor operates_based on_the anisotropic magneto-resistance effect (hereinafter_referred to as_an AMR_effect). By this_effect, the component of a change_in electrical resistance_of the read element varies in_proportion_to the second_power_of_the cosine_of the angle_between_the orientation_of_magnetization and the direction of the_sense_current flowing through the read element. The_AMR effect is described_in_more detail in an_article entitled “Memory, Storage, and_Related Applications”, D. A. Thompson, IEEE_Transactions on_Magnetics, Vol._MAG-11, No. 4, pp. 1039 (1975).
In addition, disclosed lately is a_more prominent magneto-resistance effect by which_a change in electrical_resistance of_the_layered magnetic sensor_is_caused by_spin-dependent transportation of conduction electrons between magnetic_layers via_a non-magnetic layer and spin-dependent scattering_associated therewith at layer_boundaries._This magneto-resistance effect is identified by_various names such as the “giant_magneto-resistance effect” or the “spin_valve_effect”._Such a magneto-resistance sensor is_formed of suitable materials to provide_improved detection sensitivity_and greater changes in electrical resistance in_comparison_with a sensor which makes use_of_the AMR effect. In a MR_sensor_of_this type, in-plane resistance between_a pair of ferromagnetic layers separated_by a non-magnetic layer varies in proportion to the_cosine of the_angle between the orientations of_magnetization_of_the aforementioned pair of ferromagnetic layers. In Japanese Patent Laid-Open_Publication No._Hei 2-61572 submitted_in July 1988, for claiming priority, described is a layered_magnetic structure for providing a significant change_in MR caused by an anti-parallel alignment of the orientations of_magnetization in the magnetic layers.
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