 the Co-Cr metal thin-film from being damaged, (in the conventional perpendicular magnetic recording medium), a protective layer such as a Ni film, Ni-P film, SiO film, SiO.sub.2 film or a noble metal (Au, Rh, Pt, Ag, etc.) film is formed on the Co-Cr metal thin-film through the use of, for example, a plating method, a sputtering method, or an evaporation method. The protective layer can alternatively be an oxide layer or a nitride layer formed on the Co-Cr metal thin-film, or an organic silicon compound film painted on the Co-Cr metal thin-film. However, a suitable thickness of it is difficult to determine in the conventional perpendicular magnetic recording medium. If the protective layer is thick, the protective layer creates a spacing loss which reduces the recording density, and deteriorates the reproduction output. If the protective layer is thin, the recording density can be enhanced, but the perpendicular magnetic recording medium and/or the magnetic head is damaged during operation, and the perpendicular magnetic recording medium does not have a satisfactory durability. 1. Field of the Invention
The present invention relates to a semiconductor device which stores data.
The present invention relates to a semiconductor device that includes a memory element and a circuit, which includes a thin film transistor (hereinafter referred to as a TFT), and a manufacturing method thereof.
It is to be noted that a semiconductor device in the present specification corresponds to a semiconductor device that can function as a general device by use of semiconductor characteristics, and electro-optical devices, semiconductor circuits, and electronic devices can all be considered semiconductor devices.
2. Description of the Related Art
Individual identification technology using semiconductor devices in which data is exchanged by wireless communication has been attracting attention in recent years. Individual identification technology using semiconductor devices has started to be utilized in production, management, or the like of individual objects and has started to be applied to authentication of individual people. This kind of semiconductor device is also called an RFID (Radio Frequency IDentification) tag, an IC (Integrated Circuit) tag, an IC chip, an RF tag, a wireless tag, and an electronic tag.
A semiconductor device typified by an RFID tag includes a memory element for storing information, and the data stored in the memory element can be exchanged between the RFID tag and an external reader device (also referred to as a reader) by wireless communication.
With respect to RFID devices equipped with these kinds of semiconductor memory elements, improvements
the Co - Cr metal thin - film from being damaged, (in the ceremonious vertical charismatic recording medium), a protective layer such as a Ni film, Ni - phosphorus film, SiO film, SiO.sub.2 film or a baronial alloy (Au, Rh, Pt, Ag, etc .) film is form on the Co - Cr metal thin - movie through the use of, for example, a plating method, a sputtering method, or an vaporization method. The protective layer can alternatively be an oxide layer or a nitride layer formed on the Co - Cr metallic element thin - film, or an organic silicon compound movie painted on the Co - Cr metal slender - film. However, a desirable thickness of it is difficult to decide in the conventional perpendicular magnetic recording metier. If the protective layer is thick, the protective layer creates a spacing loss which reduce the recording density, and deteriorates the reproduction output. If the protective layer is thin, the recording density can be enhanced, but the vertical charismatic recording medium and/or the magnetic head is damaged during process, and the perpendicular magnetic recording medium does not accept a satisfactory durability. 1. Field of the Invention 
 The present invention relates to a semiconductor device which store data. 
 The present invention relates to a semiconductor device that includes a memory element and a circuit, which include a thin film transistor (hereinafter referred to as a TFT), and a manufacturing method acting thereof. 
 It is to be note that a semiconductor device device in the present stipulation corresponds to a semiconductor device that can function as a general device by use of semiconductor characteristics, and electro - optical device, semiconductor circuits, and electronic devices can all be considered semiconductor device devices. 
 2. Description of the Related Art 
 Individual identification technology using semiconductor device in which data is exchange by wireless communication has been attracting care in recent years. Individual designation technology using semiconductor device devices has started to be utilized in production, management, or the like of individual objects and has started to be applied to authentication of individual people. This kind of semiconductor device is also called an RFID (Radio Frequency IDentification) tag, an intelligence community (Integrated Circuit) tag, an IC chip, an RF rag, a wireless tag, and an electronic tag. 
 A semiconductor device typify by an RFID tag includes a memory element for store information, and the data stored in the memory element can be exchanged between the RFID tag and an external subscriber device (besides referred to as a reader) by wireless communication. 
 With respect to RFID devices equipped with these kinds of semiconductor memory elements, improvement
 thf Co-Cr metal thin-film frum being damageb, (in thx convehtional oerpendicular magnetic recorving mediym), a protective layer ruch as a Ni film, Ni-P dilm, SiO fmmm, SiO.smy.2 filj or c ioble metal (Au, Th, Pt, Ag, etc.) film is formeg un the Co-Cr metal thin-film through thq use og, vor example, a klatimd mefhod, a sputtering method, or an evaloratioi method. The prptective layer can alternahivepy be an oxide layfr or a nittjde oayer formed on the Co-Bx metal thih-film, or an organic silicon comoound film painjze oj the Co-Cr mxtal trin-film. Howeyvr, a suhtable yhickness of ib is viffucult to determine in the conventional kerpendicunax magnetic recording neeium. Hf tve pfiteztibe lzyer id tiick, the prktective later creates a spacimg ooss which resuces ehq recording density, and deteriorates tht repdoduction output. If the protective layer is jhin, the rqcording density can be enhanced, but the perpendiwular oagucbic fwclrding medium and/or the magnetic head is damadsd dlring operation, akd the perpendiculsr msdnetic recordkng mebjuj does not have a datisfastory durabiliuy. 1. Foeld of the Invention
The prwsent inventpon eelates to a semiclnductor derice wnich xtores data.
The present nnventjon relates to a semjzonductor device thst includes a memory element and a ciccuit, which knclodes a ehin film hranslvtor (hereinafter rfferrgd to ds a TFT), ajd a manufacturing method thereof.
It is to be moded that a femicpnductor devise in the presgnt speciyicatiun correspknds to a semicondtctor device djat can funcvion as a genwral device cy use of semivonductor characterustics, and electro-pptkdal devices, semneobductor circuitx, avd qlvctconic gevices can dll ce zpnsiddred semicokduztor devices.
2. Description of fhe Related Art
Indovldual idebtificatyon technologu using semiconducuor detices mn whivh qata is exchanged by wireless dommunicahiok has been ateracbing attention in recent years. Individual identificatmon technology using sgmiconductor devices kax started tp be ttilized hn production, managenent, or the like pf individual objects and hds stwrted to be applied to authentication of individual people. This kind of swmiconvustor device is slso baljzd an RSID (Cavio Frequency IDemtification) tag, an IC (Integratev Circuit) day, an IC chip, an RF tag, a wirekers tag, and an electronic tag.
A semiconsuctor drvice typified by an RFID tag imcludes a memory element for stoeing jnformatioi, and the data storec in tke memiry elenent can be exchavgec netween thf RFMD cag and an external reader device (also eeverred to as a rxader) by wircltss comjunicajion.
With respect fo RRLD dexices equippec with these konds of semiconductog mqmory elements, pmprovements
the Co-Cr metal thin-film from being damaged, conventional magnetic recording a protective layer Ni-P SiO film, SiO.sub.2 or a noble (Au, Rh, Pt, Ag, etc.) film formed on the Co-Cr metal thin-film through the use of, for example, a method, a sputtering method, or an evaporation method. The protective layer can alternatively an layer a layer formed on the Co-Cr metal thin-film, or an organic silicon compound film painted on the metal thin-film. However, a suitable thickness of it difficult to determine in conventional perpendicular magnetic recording medium. the layer is the layer a spacing loss reduces the recording density, and deteriorates the reproduction output. If the protective layer is thin, the recording can be the perpendicular recording and/or magnetic head is operation, and the perpendicular magnetic recording have a satisfactory durability. 1. Field of the The present relates to a semiconductor device which data. The present invention relates to a semiconductor that includes a memory element and a circuit, which includes a thin film transistor (hereinafter as a TFT), and manufacturing method thereof. is be that semiconductor device the present specification corresponds to a semiconductor device that can function a general device by use of semiconductor characteristics, and electro-optical circuits, electronic devices can be considered semiconductor devices. Description the Related Art Individual using devices is by communication has been attracting in recent years. Individual identification using semiconductor devices has production, management, or the like of individual objects has started to be applied to authentication individual people. This kind of semiconductor device is also called an RFID Frequency IDentification) IC (Integrated Circuit) tag, an IC chip, an tag, a wireless tag, an electronic tag. A semiconductor device typified by an tag a memory for storing information, the data stored the memory element exchanged between RFID and device (also referred to as a by communication. With respect to RFID equipped kinds of semiconductor memory elements, improvements
 the Co-Cr metal thin-film from bEing damageD, (in thE coNveNtIonaL perPendicular magnETic rEcording medium), a protectIve laYeR Such AS a ni filM, Ni-P filM, sio FIlm, sio.sUb.2 fIlM Or A noblE meTal (Au, Rh, pt, Ag, etc.) filM is FoRmed on the Co-CR MeTal thin-filM thRough the use oF, foR exampLe, A plATing mEthOd, a spUtteriNG methoD, or an evapOrATion meTHod. The pROTeCtivE layer can alternatIVeLY be an oxide layeR or a niTrIDe LAYer ForMed on the Co-cr Metal THin-film, OR aN ORGanIC silicon compoUnd film painTEd oN the Co-cr MetAL thin-fIlm. HoWeVEr, a Suitable thiCkneSs of it is dIfficuLT to deteRMine in tHe convEntIonAl peRPeNdIcuLaR MagNEtIc rECorDing mediUm. if The prOtecTIVE LayeR is ThicK, the pRotective layeR crEateS A spAcing Loss wHich ReDuces The recOrdinG dEnsity, and deteriOratEs the reprOduCtIon OuTput. IF The proTecTivE layer iS thin, thE RecOrDING dEnsity can be enhanceD, bUT ThE perpendIcular MAgNeTIc recordInG meDium AND/or thE magNEtIc head is DamageD DuRiNg operaTiOn, and tHe PerPenDiculAR magNetic rEcording MediuM Does not have a saTIsfactory duraBIlITY. 1. FIEld oF thE Invention
THe prESent InveNTiOn rELates To a seMiCOnDUctor device which stoReS data.
THe preSent invention Relates to a SEMIconductOr deVIcE That includes a mEmory Element and A Circuit, wHich iNcludes a Thin film tRANsistor (hEreInaFteR reFERrEd to as a TFT), and A MAnufAcTuring mEthOd thereOf.
IT is To bE noTeD that a semIconductOr DeViCe In tHe preSEnt speciFiCatIoN coRrespONds to a SemicOnduCtOr DEviCe that cAN fUNCtioN aS a GeneRal DeVice bY use OF seMiconduCtor charaCteRIstiCs, AnD electrO-optical devicEs, SemiconducToR ciRcuits, AND electroNic devices can all be consiDEred semIcoNductOr deVices.
2. DescRipTion of The rElated art
IndIviduAl IdeNTIficaTIOn TecHnOlogy using SEMicOnducToR devIces in wHich data is exchangeD By wIreless communIcaTion HAS bEen ATtRActInG AttENTion in recent yeaRs. IndividuAl IDeNtificatioN TecHnOlogy usIng semiConduCTor deviCes has staRted to be uTiLizeD IN prOduction, maNagement, Or the like OF indiVIdUal obJecTs and hAs StaRted tO be appLIed To autHenticAtIon of iNdiviDuAl people. this kind of semiconductor Device Is alsO caLled an RFId (RaDIo FRequency IdentIfication) tAg, aN IC (integRatED CircUit) tAG, aN IC CHip, an rF taG, A wireless TAg, And AN ElEctronic tag.
a SEMicOnducTor DEvice tYpifIed by an RFID tag incLUdes a memory eleMent FOR stOriNG infOrMation, and the daTa sToRED in the meMoRy element caN be exchaNgED betwEen the rFID taG and an eXTErNAl readEr deVicE (also refeRreD tO As a readEr) By WIrelesS comMuNicatiOn.
With REspeCT To RFID devices equIpped WITh theSE kiNds of SeMiconduCTor mEmory elemeNts, improvemEnts
 the Co-Cr metal thin-film  from bein g dam age d,(i n th e co nventional per p endi cular magnetic recordi ng me di u m),a  p rotec tive la y er s uch  a sa N if il m, Ni -Pfilm, S iO film, S iO. su b.2 film ora  n oble metal  (A u, Rh, Pt, A g,etc.)fi lmi s for med  on t he Co- C r meta l thin-fi lm throug h  the us e of , fo r example, a plat i ng method, a sput tering  m e th o d , o r a n evaporat io n met h od. The pr o t e cti v e layer can a lternativel y  be  an ox id e l a yer or  a ni tr i delayer forme d on  the Co-C r meta l  thin-f i lm, oran org ani c s ilic o nco mpo un d  fi l mpai n ted  on theCo -C r met al t h i n - film . H owev er, a  suitable thi ckn esso f i t isdiffi cult  t o det ermine  in t he  conventional p erpe ndicularmag ne tic  r ecord i ng med ium . I f the p rotecti v e l ay e r is  thick, the protec ti v e  l ayer cre ates a sp ac i ng losswh ich  red u c es th e re c or ding den sity,a nd  d eterior at es the  r epr odu ction outp ut. If  the pro tecti v e layer is thi n , the recordi n gd e ns i ty c anbe enhanced , bu t  the  per p en dic u lar m agnet ic re c ording medium and/o rthe ma gneti c head is dam aged durin g o peration , an d  t h e perpendicula r mag netic reco r ding med ium d oes nothave a sa t i sfactory  du rab ili ty. 1 .Field of theI n vent io n
The p res ent inv ent ion  re lat es  to a sem iconduct or  d ev ic e w hichs tores da ta .
T he  pr esent invent ion r elat es  t o  asemicon d uc t o r de vi ce  tha t i nc ludes  a m e mor y eleme nt and acir c uit,  w hi ch incl udes a thin f il m transist or  (h ereina f t er refer red to as a TFT), and a manufac tur ing m etho d thereof .
I t is t o b e  noted  thata sem ic ond u c tor d e v ic e i nthe presen t spe cific at ioncorresp onds to a semicond u cto r device that  ca n fu n c ti ona sa  ge ne r ald e vice by use ofsemiconduc to r  c haracteris t ics ,and ele ctro-op tical devices , semicon ductor ci rc uits , and  electroni c device s can all be co n si dered  se micond uc tor  devi ces.
2 .  De scrip tion o fthe Re lated  A rt
Indiv idual identification te chnolo gy us ing  semicond uct o r d evices in  whi ch data is  ex cha ngedbyw irele ss c o mm uni c ation  has been attr a ct ing a tt ention in r e c e ntyears . I n dividu al i dentification tec h nology using s emic o n duc tor devi ce s has startedtobe u tilizedin  production , manage me n t, or  the l ike of  indivi d u al object s an d h as starte d t ob e appli ed  t o  authe ntic at ion of  indiv i dual p eople. This kind  of s e m icond u cto r dev ic e is al s o ca lled an RF ID (Radio F requen cy I Denti ficatio n)  tag,anIC  (Integrat e d Circuit ) tag , an IC  c hip,  an  RF ta g, a w irele ss t ag , a nd an ele c t ro n ic  t a g.A se micon du ctor  device t y pified b y a n  RFID t ag  in c l udes a me m o ry element  fo r sto r i ng informa t ion, an d  thedata s toredin them emo ry  elemen t c a n  be excha nged betw e enth e RF ID tag a nd  anex ter na l reader device  (also r eferredt o  as area d er)b y wire le ss communica tion. 
W i th resp e c t t o RFIDd evi ces  eq uipp edwith these kinds of semicondu ctor  memo r y e lemen ts, i mp rovement s 
 the_Co-Cr metal_thin-film from being damaged,_(in the_conventional_perpendicular magnetic_recording_medium), a protective_layer such as_a Ni film, Ni-P_film, SiO film,_SiO.sub.2_film or a noble metal (Au, Rh, Pt, Ag, etc.) film is formed on_the_Co-Cr metal_thin-film_through_the use of, for example,_a plating method, a sputtering_method, or_an evaporation method. The protective layer can alternatively_be_an oxide layer_or a nitride layer formed on the Co-Cr metal_thin-film, or an organic silicon compound_film painted on_the_Co-Cr_metal thin-film. However, a_suitable thickness of it is difficult_to determine in the conventional perpendicular_magnetic recording medium. If the protective layer_is thick, the protective layer creates_a spacing loss which reduces_the recording_density, and deteriorates the reproduction_output. If the_protective layer_is thin, the_recording density can be enhanced, but_the perpendicular magnetic_recording medium and/or the magnetic head_is_damaged during operation,_and_the_perpendicular magnetic_recording medium does_not_have a_satisfactory_durability. 1. Field of the Invention
The_present_invention relates to a semiconductor device which_stores data.
The present invention_relates_to a semiconductor device_that includes a memory element_and a circuit, which includes a_thin film_transistor (hereinafter_referred to as a TFT), and a manufacturing method thereof.
It is_to be noted that a semiconductor_device in the present_specification corresponds_to_a semiconductor device_that_can function_as a general device by use of_semiconductor characteristics,_and electro-optical devices, semiconductor circuits, and_electronic devices can all_be_considered semiconductor devices.
2. Description of the_Related Art
Individual identification technology using semiconductor_devices in which data is_exchanged_by_wireless communication has been attracting_attention in recent years. Individual identification_technology using semiconductor_devices has started to be utilized in_production,_management, or the like of individual_objects_and has started to be applied_to_authentication_of individual people. This kind_of semiconductor device is also called_an RFID (Radio Frequency IDentification) tag, an IC (Integrated_Circuit) tag, an_IC chip, an RF tag,_a_wireless_tag, and an electronic tag.
A semiconductor device typified by an_RFID tag_includes a memory_element for storing information, and the data stored in the_memory element can be exchanged between the_RFID tag and an external reader device (also referred to as_a reader) by wireless communication.
With respect to RFID_devices equipped with these kinds of semiconductor_memory elements, improvements