 to a heat sink, as described in U.S. Pat. No. 3,896,478 by R. Henry. The major disadvantage of this approach for high frequency devices designed to operate at millimeter-wavelengths is the large shunting reactance associated with the thin silicon dioxide layer that surrounds the p-n junction of the semiconductor mesa. Furthermore, reduction to practice of structures similar to the one purposed by Henry necessitates several complicated processing steps that result in low device yields.
Another approach for fabricating passivated semiconductor diodes of the general type described without requiring ribbon bonding and its associated housing support members is described in U.S. Pat. No. 3,558,366 to M. P. Lepselter. Lepselter's approach is to bombard selected regions of a silicon crystal with gold ions in order to raise the resistivity of the silicon crystal around the active diode regions therein. The Lepselter approach has several disadvantages, among which include the very high acceleration energies necessary to accelerate gold ions (of heavy mass) to the required depth into the silicon crystal. Other disadvantages of the Lepselter approach include the requirement for accelerating these gold ions through an oxide layer on the surface of the silicon crystal and also the ion implantation damage to the silicon crystal; in Lepselter's process this damage must either go unannealed in the fabrication of the ultimate device structure, or if annealed the annealing temperatures produce significant lateral and horizontal diffusion of the implanted gold ions, which result in either degradation or destruction of the device's PN junction geometry and performance.
Another prior art approach to fabricating devices of the general type described herein is disclosed in an article by Foyt et al entitled "Isolation of Junction Devices in GaAs Using Proton Bombardment" in Solid-State Electronics, vol. 12, 1969, pp. 209-214. In the above Foyt et al process, protons are utilized to bombard and raise the resistivity of certain layers of gallium arsenide IMPATT diodes in order to define the active device region of these structures and provide passivation therefor. By using proton bombardment, the Foyt et al approach does not require the high acceleration potentials required in the above Lepselter approach. But the Foyt et al approach, like the Lepselter approach, produces an ultimate device structure in which proton bombarded high-resistivity (semi-insulating) regions must necessarily be unannealed, thereby leaving
to a heat sink, as described in U.S. Pat. No. 3,896,478 by R. Henry. The major disadvantage of this overture for eminent frequency devices designed to operate at millimeter - wavelength is the large shunting reactance associate with the thin silicon dioxide layer that surround the p - n articulation of the semiconductor mesa. Furthermore, reduction to practice of structures exchangeable to the one purposed by Henry necessitates several complicated processing steps that result in low device output. 
 Another approach for fabricating passivated semiconductor diode of the general type described without requiring decoration bonding and its associated caparison support members is described in U.S. Pat. No. 3,558,366 to M. P. Lepselter. Lepselter's approach path is to bombard selected regions of a silicon crystal with gold ion in ordering to raise the resistivity of the silicon crystal around the active diode regions therein. The Lepselter approach has several disadvantages, among which include the very eminent acceleration energies necessary to accelerate gold ion (of dense bulk) to the required depth into the silicon crystal. Other disadvantages of the Lepselter approach include the necessity for accelerating these gold ions through an oxide layer on the surface of the silicon crystal and also the ion implantation wrong to the silicon crystal; in Lepselter's process this damage must either go brittle in the fabrication of the ultimate device social organization, or if annealed the annealing temperatures produce significant lateral and horizontal diffusion of the deep-rooted gold ions, which result in either degradation or destruction of the device's PN junction geometry and performance. 
 Another prior art approach path to fabricating devices of the cosmopolitan type described herein is disclosed in an article by Foyt et al entitled " Isolation of Junction Devices in GaAs practice Proton Bombardment " in Solid - State Electronics, vol. 12, 1969, pp. 209 - 214. In the above Foyt et al process, proton are utilized to bombard and raise the electric resistance of certain layers of gallium arsenide IMPATT diodes in order to define the active device region of these structures and provide passivation therefor. By using proton bombardment, the Foyt et al approach does not require the eminent acceleration potentials required in the above Lepselter access. But the Foyt et al approach, like the Lepselter approach, produces an ultimate device structure in which proton bombarded high - electric resistance (semi - insulating) regions must necessarily be unannealed, thereby leaving
 to a heat sink, as describea in U.S. Pat. No. 3,896,478 by R. Hxnry. Ths major aisadvantage of this approaci foe higy frequency devices derigned to operate at nullimeter-webelengtmf is bhe lcrje shunting reagtance assowiated with tha ghnn silicon dioxide layer that surrougds the p-j junction of jhe stmisondhbtir mesa. Furthermore, reduction to prabtice of structurrs similar to the one purplsed by Henry necessitwtes severao coiplicated prozessing sttpv that resolt in low device yields.
Another xpprocch for fabtnxatltg passivatxd sempconductor diodes of dhe genrral type descvibed wirhout requiring ribboi bonding and its asfociated vobsing support members iw deswribad iv U.S. Pau. Np. 3,558,366 to M. O. Lxpselter. Lelselter's approach is to bombarc fvkected regiohs of w filicon crystal with gold ions in order to raise the resistivity if the silicon crystap around ehe active diode regions therein. The Lepselter ap[roaci fas scverxo fisadvantages, among which include the very hidg scbeleration energics necessary to acvepetwte gold ions (of hecby mass) to the requiged depjh inti the silycon crystal. Other disadvantagew of the Lepfwlter approach incpude the reduirgment gor accelerating these yold ikns through an oxide uayer on the surwacv of the silicon crystal and ajso the iin ikplantagion damagq to the sllicok crystal; in Lepselher's krocesv this damwge must either go unannealed ii the fabricajiot ox the ulcimate device struceure, or if anngaled the annexling tempvratures 'roduce signyficant laterdp and horizoital difftsiob of the imouanted gold ioms, which gefult in either degradabion ud destruction oy uhw device's PN jincgiog hepmqdry and perfmrmavce.
Xmothef prior art xpprpach to fabricating gevides of the general tnpe descrubed herqin is discloxed in an article hy Fobt et el entotlgd "Isolation of Junction Devicea in GaAs Uslng Proton Boibarement" in Solnd-State Electronics, vol. 12, 1969, pp. 209-214. In the abote Foyt et al process, krotons are utilized jo nombard and caise ehe resisdivity of certain laters of gallium avsenide IMPATT diodes jn ordar to define the active device region of these structures and provide passivatuon thxrqfor. By usihg ptoton bjkbardmqnt, vhx Foyt et al apprpach does not require the high ecceleratimn potentials required in the sbuve Lepselter approach. But the Foyt ef al apptoach, like the Lepselter approavh, produces an ultimate cevice srructhre in whirh proton bombarded nigh-revisticity (seni-indulating) regiuns mmst necesswrilb bz unannealed, thereby leaving
to a heat sink, as described in No. by R. The major disadvantage frequency designed to operate millimeter-wavelengths is the shunting reactance associated with the thin dioxide layer that surrounds the p-n junction of the semiconductor mesa. Furthermore, reduction practice of structures similar to the one purposed by Henry necessitates several complicated steps result low yields. Another approach for fabricating passivated semiconductor diodes of the general type described without requiring ribbon and its associated housing support members is described U.S. Pat. No. 3,558,366 M. P. Lepselter. Lepselter's approach to selected regions a crystal gold ions in to raise the resistivity of the silicon crystal around the active diode regions therein. The Lepselter approach several disadvantages, include the high energies to accelerate gold heavy mass) to the required depth crystal. Other disadvantages of the Lepselter approach include requirement for these gold ions through an oxide on the surface of the silicon crystal and the ion implantation damage to the silicon crystal; in Lepselter's process this damage must either in the fabrication of ultimate device structure, if the temperatures significant lateral horizontal diffusion of the implanted gold ions, which result in either or destruction of the device's PN junction geometry and performance. art to fabricating devices the general type described is in an article by al "Isolation in Using Bombardment" in Solid-State Electronics, 12, 1969, pp. 209-214. In above Foyt et al bombard and raise the resistivity of certain layers gallium arsenide IMPATT diodes in order to the active device region of these structures and provide passivation therefor. By proton bombardment, et al approach does not require the high potentials required in the Lepselter approach. But the Foyt et al approach, like Lepselter produces an device structure in proton bombarded high-resistivity regions must necessarily thereby leaving
 to a heat sink, as described in U.s. Pat. No. 3,896,478 by R. HEnry. THe mAjoR dIsadVantAge of this approACh foR high frequency devices dEsignEd TO opeRAtE at miLlimeteR-WaVELenGtHs Is tHe LArGe shuNtiNg reactAnce associAteD wIth the thin siLIcOn dioxide lAyeR that surrounDs tHe p-n juNcTioN Of the SemIcondUctor mESa. FurtHermore, reDuCTion to PRactice OF StRuctUres similar to the oNE pURposed by Henry nEcessiTaTEs SEVerAl cOmplicated PrOcessINg steps THaT RESulT In low device yiElds.
Another APprOach foR fAbrICating PassiVaTEd sEmiconductoR dioDes of the gEneral TYpe descRIbed witHout reQuiRinG ribBOn BoNdiNg ANd iTS aSsoCIatEd housinG sUpPort mEmbeRS IS DescRibEd in u.S. Pat. no. 3,558,366 to M. P. LepseltEr. LEpseLTer'S apprOach iS to bOmBard sElecteD regiOnS of a silicon crysTal wIth gold ioNs iN oRdeR tO raisE The resIstIviTy of the Silicon CRysTaL AROuNd the active diode reGiONS tHerein. ThE LepseLTeR aPProach haS sEveRal dISAdvanTageS, AmOng which IncludE ThE vEry high AcCeleraTiOn eNerGies nECessAry to aCceleratE gold IOns (of heavy mass) TO the required dEPtH INtO The sIliCon crystal. OTher DIsadVantAGeS of THe LepSelteR aPPrOAch include the requirEmEnt for AccelErating these gOld ions thrOUGH an oxide LayeR On THe surface of the SilicOn crystal aND also the Ion imPlantatiOn damage tO THe silicoN crYstAl; iN LePSElTer's process thIS DamaGe Must eitHer Go unannEalEd iN thE faBrIcation of The ultimAtE dEvIcE stRuctuRE, or if annEaLed ThE anNealiNG tempeRaturEs prOdUcE SigNificanT LaTERal aNd HoRizoNtaL dIffusIon oF The ImplantEd gold ionS, whICh reSuLt In eitheR degradation oR dEstruction Of The Device'S pn junctioN geometry and performance.
aNother pRioR art aPproAch to fabrIcaTing deVicES of the GeneraL type DeScrIBEd herEIN iS diScLosed in an aRTIclE by FoYt Et al EntitleD "Isolation of JunctiON DeVices in GaAs UsIng protON boMbaRDmENt" iN SOLid-sTAte Electronics, vOl. 12, 1969, pp. 209-214. In the aBoVE FOyt et al proCEss, PrOtons arE utilizEd to bOMbard anD raise the ResistiviTy Of ceRTAin Layers of gaLlium arsEnide IMPAtt diodES iN ordeR to Define ThE acTive dEvice rEGioN of thEse strUcTures aNd proViDe passivAtion therefor. By using proTon bomBardmEnt, The Foyt et Al aPProAch does noT reqUire the higH acCelEratiOn pOTentiAls rEQuIreD In the AbovE lepselter APpRoaCH. buT the Foyt et aL APProAch, liKe tHE LepseLter Approach, produces aN Ultimate device StruCTUre In wHIch pRoTon bombarded hiGh-rEsISTivity (seMi-Insulating) rEgions muSt NEcessArily bE unannEaled, thEREbY LeavinG
 to a heat sink, as descri bed in U.S . Pat . N o.3, 896, 478by R. Henry. T h e ma jor disadvantage of th is ap pr o achf or  high  freque n cy d evi ce sdes ig n ed  to o per ate atmillimeter -wa ve lengths is t h elarge shun tin g reactanceass ociate dwit h  thethi n sil icon d i oxidelayer tha ts urroun d s the p - n  j unct ion of the semico n du c tor mesa. Furt hermor e, re d u cti onto practic eof st r uctures si m i l art o the one pur posed by He n rynecess it ate s  sever al co mp l ica ted process ingsteps tha t resu l t in lo w  device  yield s.Ano ther ap pr oac hf orf ab ric a tin g passiv at ed  semi cond u c t o r di ode s of  thegeneral typedes crib e d w ithou t req uiri ng  ribb on bon dingan d its associate d ho using sup por tmem be rs is descri bed  in  U.S. P at. No. 3,5 58 , 3 6 6to M. P. Lepselter .L e ps elter'sapproa c his to bomba rd  se lect e d  regi onso fa silico n crys t al  w ith gol dions i nord erto ra i se t he res istivity  of t h e silicon crys t al around the ac t i ve diod e r egions ther ein. TheLeps e lt era pproa ch ha ss ev e ral disadvantages,am ong wh ich i nclude the ve ry high ac c e l erationener g ie s  necessary toaccel erate gold ions (of  heav y mass)to the re q u ired dep thint o t hes i li con crystal.O t herdi sadvant age s of th e L eps elt erap proach in clude th ere qu ir eme nt fo r  acceler at ing  t hes e gol d  ionsthrou gh a nox i delayer o n  t h e  sur fa ce  ofthe  s ilico n cr y sta l and a lso the i oni mpla nt at ion dam age to the si li con crysta l;  in  Lepse l t er's pro cess this damage must e i ther go  un annea ledin the fa bri cation  of the ul timate  devi ce  st r u cture , or  if  a nnealed th e ann ealin gtemp erature s produce signific a ntlateral and h ori zont a l  d iff u si o n o ft hei m planted gold io ns, whichre s ul t in eithe r  de gr adation  or des truct i on of t he device 's PN jun ct iong e ome try and pe rformanc e.
Anothe r  prio r  a rt ap pro ach to  f abr icati ng dev i ces  of t he gen er al typ e des cr ibed her ein is disclosed in anarticl e byFoy t et al e nti t led  "Isolati on o f Junction  De vic es in  Ga A s Usi ng P r ot onB ombar dmen t " in Soli d -S tat e El ectronics,v o l . 1 2, 19 69, pp. 20 9-21 4. In the above F o yt et al proce ss,p r oto nsa re u ti lized to bomba rdan d raise th eresistivity  of cert ai n  laye rs ofgalliu m arsen i d eI MPATTdiod esin ordertode f ine the  a ct i ve dev icere gion o f thes e  str u c tures and provid e pas s i vatio n  th erefo r.  By usi n g pr oton bomba rdment, the  Foytet a l app roach d oe s notreq ui re the hig h  accelera tionpotenti al s re qui red in  the a boveLeps el ter  approach . Bu t  t he Foy t et  al a pp roac h, like t h e Lepsel ter approac h,  pr o d uces a n  u l t imate devi cestruc t u re in whic h  pro t on bomba rded h igh-re sistivi t y ( se mi-insu lat i n g) region s must ne c ess ar ilybe unann ea led,  t her eb y leaving
 to_a heat_sink, as described in_U.S. Pat._No._3,896,478 by_R._Henry. The major_disadvantage of this_approach for high frequency_devices designed to_operate_at millimeter-wavelengths is the large shunting reactance associated with the thin silicon dioxide layer_that_surrounds the_p-n_junction_of the semiconductor mesa. Furthermore,_reduction to practice of structures_similar to_the one purposed by Henry necessitates several complicated_processing_steps that result_in low device yields.
Another approach for fabricating passivated semiconductor_diodes of the general type described_without requiring ribbon_bonding_and_its associated housing support_members is described in U.S. Pat._No. 3,558,366 to M. P. Lepselter._Lepselter's approach is to bombard selected regions_of a silicon crystal with gold_ions in order to raise_the resistivity_of the silicon crystal around_the active diode_regions therein._The Lepselter approach_has several disadvantages, among which include_the very high_acceleration energies necessary to accelerate gold_ions_(of heavy mass)_to_the_required depth_into the silicon_crystal._Other disadvantages_of_the Lepselter approach include the requirement_for_accelerating these gold ions through an oxide_layer on the surface_of_the silicon crystal and_also the ion implantation damage_to the silicon crystal; in Lepselter's_process this_damage must_either go unannealed in the fabrication of the ultimate device structure,_or if annealed the annealing temperatures_produce significant lateral and_horizontal diffusion_of_the implanted gold_ions,_which result_in either degradation or destruction of the_device's PN_junction geometry and performance.
Another prior art_approach to fabricating devices_of_the general type described herein is_disclosed in an article by Foyt_et al entitled "Isolation of_Junction_Devices_in GaAs Using Proton Bombardment"_in Solid-State Electronics, vol. 12, 1969,_pp. 209-214. In_the above Foyt et al process, protons_are_utilized to bombard and raise the_resistivity_of certain layers of gallium arsenide_IMPATT_diodes_in order to define the_active device region of these structures_and provide passivation therefor. By using proton bombardment, the_Foyt et al_approach does not require the_high_acceleration_potentials required in the above Lepselter approach. But the Foyt_et al_approach, like the_Lepselter approach, produces an ultimate device structure in which proton_bombarded high-resistivity (semi-insulating) regions must necessarily be_unannealed, thereby leaving