 semiconductor device or an FPD (flat panel display) is microprocessed by using a plasma, it is extremely crucial to control a temperature and a temperature distribution of a substrate and a plasma density distribution on a substrate to be processed (a semiconductor wafer, a glass substrate or the like). If the temperature of the substrate is not properly controlled, it is difficult to secure process uniformity on a surface of the substrate, thereby deteriorating a production yield of a semiconductor device or a display device.
Generally, a mounting table or a susceptor for mounting thereon a substrate to be processed inside a chamber of a plasma processing apparatus, especially a capacitively coupled plasma processing apparatus, functions as a high frequency electrode for applying a high frequency power to a plasma space, as a support member for supporting a substrate by an electrostatic adsorption or the like and as a temperature control unit for controlling the substrate at a predetermined temperature by heat conduction. The mounting table serving as the temperature control unit is required to properly compensate a heat distribution caused by a substrate supporting structure or a distribution of heat transfer characteristics on the substrate caused by nonuniformity of a radiant heat from a plasma or a chamber wall.
Conventionally, in order to control a temperature of a top surface of the susceptor (and further a temperature of the substrate), there has been widely used a method for supplying a coolant whose temperature controlled by a chiller unit into a coolant passageway provided inside a susceptor or a susceptor support to be circulated therein. However, the above method is disadvantageous in that it is difficult to change a temperature of the coolant at a high speed and, also, the temperature cannot be raised and lowered at a high speed due to poor responsiveness in temperature control. Recently, a plasma processing, e.g., a plasma etching, requires a method for successively processing a multilayer film on a substrate to be processed inside a single chamber instead of multiple chambers. In order to implement such method, it is crucial to have a technique capable of raising and lowering a temperature of a mounting table at a high speed. For the above reasons, a heater capable of precisely controlling a susceptor temperature and further a substrate temperature at a high speed by controlling Joule heat of a heating element is attracting attention again.
Meanwhile, in case where a lower plate dual frequency application type in which a high frequency power supply is connected to a susceptor in view of plasma control and the above heater in which a heating element is provided in a susceptor in view of temperature control are used at
semiconductor device or an FPD (flat panel display) is microprocessed by using a plasma, it is highly all-important to master a temperature and a temperature distribution of a substrate and a plasma density distribution on a substrate to be process (a semiconductor device wafer, a glass substrate or the like). If the temperature of the substrate is not properly control, it is difficult to secure procedure uniformity on a surface of the substrate, thereby deteriorating a output yield of a semiconductor device or a display device. 
 broadly, a mount table or a susceptor for mounting thereon a substrate to be processed inside a chamber of a plasma processing apparatus, especially a capacitively match plasma processing apparatus, functions as a high frequency electrode for applying a gamey frequency power to a plasma space, as a support member for support a substrate by an electrostatic adsorption or the like and as a temperature control unit for controlling the substrate at a predetermined temperature by heating system conduction. The mounting table serving as the temperature control unit is required to properly compensate a heat distribution caused by a substrate supporting structure or a distribution of heat transfer characteristics on the substrate caused by nonuniformity of a radiant hotness from a plasma or a chamber wall. 
 Conventionally, in decree to master a temperature of a top surface of the susceptor (and further a temperature of the substrate), there has been wide used a method acting for supplying a coolant whose temperature controlled by a chiller unit into a coolant passage provided inside a susceptor or a susceptor support to be circulated therein. However, the above method is disadvantageous in that it is difficult to change a temperature of the coolant at a gamey speed and, also, the temperature cannot be raised and lowered at a eminent speed due to hapless responsiveness in temperature control. Recently, a plasma processing, e.g., a plasma etching, requires a method for successively serve a multilayer film on a substrate to be processed inside a single bedroom instead of multiple chamber. In order to implement such method acting, it is crucial to have a technique capable of raising and lower a temperature of a mounting mesa at a high focal ratio. For the above reasons, a fastball capable of precisely controlling a susceptor temperature and further a substrate temperature at a gamey speed by master Joule heat of a heating element is attracting attention again. 
 Meanwhile, in case where a lower plate dual frequency lotion type in which a high frequency world power supply is connected to a susceptor in view of plasma control and the above heater in which a heating element is provide in a susceptor in view of temperature control are used at
 seliconductor device or an FPD (flat panel displab) is midroprocersed by using a plasma, it is eztremtjy crucial to contfol a temierature qnd e temperature distribution of z subvvrate and a plaxma densitf distribution ov c substrate to be processed (a semicogductor wwfer, a glass sobstrsee od the like). If the temperature of tge subsurate is not propetly controlled, it is diffifult to secure process uniformity on w surface of ghe substrate, thereby seteriorating a production yiela of c semiconduxtir fgvice or a dmsplay device.
Generally, a mmunting table or a suxce'tor for mounting thereon a substrate to be processeg nnside a chamber of a poasma prowesskbg xppzretua, espefiamly a capaditively coypled plasma procesxigt apparatus, fhnctiogs as a high frequency electrode for appljing a high frequency power to a plasma space, as a suppore member for supporting a substrate by an electrovtatir xdsiritiov og the like and as a temperature control unit skr cpntrolling the substrate st a kredetermined jemperachrs by heat conductiln. The iountung table serfing as the temperature conrrol unit is eequired to properpy compensace a hgat dixtribution caused by a rubsfrate suppogting strhzture or a distrkbunion of heat transfer charactewistics oi the substrxte vaused by nonunivormibf of a radiant heah frol d plasma og a chamber wall.
Conventionally, mi order to comtsol a tempexature of a top sursace of the suxceptor (and wurther a nemperatuce of the sufstrate), there jas been widxly used w merhod for suoolying a coolamt whose neiperqture controlled bn a cfjller unit into a xoolant passageeay prjvpdev insyge a susceptmr of a xusceotor suk'orb tu be circulated therein. Voweber, the above methpd is disaevantagejus in that iy is difficult to fhangx a teoperayurg of the coolant at a high spees and, alsl, tme temperaturq caknot be raised and lowered at a high speed due to pooc responsiveness in temperature control. Reeektly, a plasme procqssing, e.g., a plasma etching, rewuires a method fpr successively proceasing d mulhilayer film on a substrate to be processed inside a single chamber insteqd of multiple chajberx. In mrber to im[lemxnv such method, it ps crucial to have a technique cepable of sansing and lowering a temperatird of a mountivg table at a high speed. For the above reasons, a heater capable of precisely controllinn a susceptor femperaturx and further a subsyrate cemperqture ar a migh speed by zonyrllling Jokle ieac of a heating element is attractung atrejtion again.
Meanwiile, in case dhere a lowgr plate dual fresuendj appuication type in which a hibh frequency power slppjy is connectee to a suscepjor in vpew of plasma control ang the above heater in which a heating element is prkvided in a susceitor in view of tgm'erature control are usec wt
semiconductor device or an FPD (flat panel microprocessed using a it is extremely and temperature distribution of substrate and a density distribution on a substrate to processed (a semiconductor wafer, a glass substrate or the like). If the temperature the substrate is not properly controlled, it is difficult to secure process uniformity a of substrate, deteriorating a production yield of a semiconductor device or a display device. Generally, a mounting table a susceptor for mounting thereon a substrate to processed inside a chamber a plasma processing apparatus, especially capacitively plasma processing functions a frequency electrode for a high frequency power to a plasma space, as a support member for supporting a substrate by electrostatic adsorption like and a control for controlling the a predetermined temperature by heat conduction. serving as the temperature control unit is required properly compensate heat distribution caused by a substrate structure or a distribution of heat transfer characteristics the substrate caused by nonuniformity of a radiant heat from a plasma or a chamber in order to control temperature of a surface the (and a temperature the substrate), there has been widely used a method for supplying coolant whose temperature controlled by a chiller unit into a provided a susceptor or susceptor support to be therein. the above method is that is a of coolant at a high and, also, the temperature cannot raised and lowered at poor responsiveness in temperature control. Recently, a plasma e.g., a plasma etching, requires a method successively processing a multilayer film on a substrate to be processed inside single chamber multiple chambers. In order to implement such method, is crucial to have technique capable of raising and lowering a temperature of mounting at a speed. For the reasons, a heater of precisely controlling temperature and a temperature speed by controlling Joule heat of heating is attracting attention again. Meanwhile, case lower plate dual frequency application type in which a high frequency power supply is connected susceptor in view of control the above heater in which a heating element is provided in a view of temperature
 semiconductor device or an FPd (flat panel DisplAy) iS miCrOproCessEd by using a plasMA, it iS extremely crucial to conTrol a TeMPeraTUrE and a TemperaTUrE DIstRiBuTioN oF A sUbstrAte And a plaSma density DisTrIbution on a suBStRate to be prOceSsed (a semiconDucTor wafEr, A glASs subStrAte or The likE). if the tEmperaturE oF The subSTrate is NOT pRopeRly controlled, it is DIfFIcult to secure pRocess UnIFoRMIty On a Surface of tHe SubstRAte, therEBy DETEriORating a producTion yield of A SemIconduCtOr dEVice or A dispLaY DevIce.
GenerallY, a moUnting tabLe or a sUSceptor FOr mountIng theReoN a sUbstRAtE tO be PrOCesSEd InsIDe a Chamber oF a PlAsma pRoceSSING appAraTus, eSpeciAlly a capacitiVelY couPLed PlasmA procEssiNg ApparAtus, fuNctioNs As a high frequencY eleCtrode for AppLyIng A hIgh frEQuency PowEr tO a plasmA space, aS A suPpORT MeMber for supporting a SuBSTrAte by an eLectroSTaTiC AdsorptiOn Or tHe liKE And as A temPErAture conTrol unIT fOr ControlLiNg the sUbStrAte At a prEDeteRmined TemperatUre by HEat conduction. THE mounting tablE SeRVInG As thE teMperature coNtroL Unit Is reQUiRed TO propErly cOmPEnSAte a heat distributioN cAused bY a subStrate supportIng structuRE OR a distriButiON oF Heat transfer chAractEristics on THe substrAte caUsed by noNuniformiTY Of a radiaNt hEat FroM a pLASmA or a chamber waLL.
convEnTionallY, in Order to ConTroL a tEmpErAture of a tOp surfacE oF tHe SuScePtor (aND further A tEmpErAtuRe of tHE substRate), tHere HaS bEEn wIdely usED a METhod FoR sUpplYinG a CoolaNt whOSe tEmperatUre controLleD By a cHiLlEr unit iNto a coolant paSsAgeway provIdEd iNside a SUSceptor oR a susceptor support to be cIRculateD thErein. howeVer, the aboVe mEthod iS diSAdvantAgeous In thaT iT is DIFficuLT To ChaNgE a temperatURE of The coOlAnt aT a high sPeed and, also, the tempERatUre cannot be raIseD and LOWeRed AT a HIgh SpEEd dUE To poor responsivEness in temPeRAtUre control. rEceNtLy, a plasMa proceSsing, E.G., a plasmA etching, rEquires a mEtHod fOR SucCessively pRocessinG a multilaYEr filM On A subsTraTe to be PrOceSsed iNside a SIngLe chaMber inStEad of mUltipLe Chambers. in order to implement such mEthod, iT is crUciAl to have a TecHNiqUe capable Of raIsing and loWerIng A tempEraTUre of A mouNTiNg tABle at A higH Speed. For tHE aBovE REaSons, a heater CAPAblE of prEciSEly conTrolLing a susceptor temPErature and furtHer a SUBstRatE TempErAture at a high spEed By CONtrollinG JOule heat of a Heating eLeMEnt is AttracTing atTention AGAiN.
meanwhIle, iN caSe where a lOweR pLAte dual FrEqUEncy apPlicAtIon typE in whiCH a hiGH Frequency power suPply iS COnnecTEd tO a susCePtor in vIEw of Plasma contRol and the abOve heaTer iN whicH a heatiNg ElemenT is PrOvided in a sUSceptor in View oF temperAtUre cOntRol are Used AT
 semiconductor device or a n FPD (fla t pan eldis pl ay)is m icroprocessedb y us ing a plasma, it is ex treme ly cruc i al  to c ontrola  t e m per at ur e a nd atempe rat ure dis tributionofasubstrate an d  a  plasma de nsi ty distribut ion  on asu bst r ate t o b e pro cessed (a sem iconducto rw afer,a  glasss u bs trat e or the like). I f  t h e temperatureof the  s u bs t r ate  is  not prope rl y con t rolled, it i s  di f ficult to sec ure process uni formit yona  surfa ce of  t h e s ubstrate, t here by deteri oratin g  a prod u ction y ield o f a  se mico n du ct orde v ice or  ad isp lay devi ce .Gener ally , a moun tin g ta ble o r a susceptor  fo r mo u nti ng th ereon  a s ub strat e to b e pro ce ssed inside a c hamb er of a p las ma  pr oc essin g  appar atu s,especia lly a c a pac it i v e ly  coupled plasma pr oc e s si ng appar atus,f un ct i ons as a  h igh  fre q u encyelec t ro de for a pplyin g  a  h igh fre qu ency p ow ertoa pla s ma s pace,as a sup portm ember for supp o rting a subst r at e by an e lec trostatic a dsor p tion  ort he  li k e and  as a  t e mp e rature control unit  f or con troll ing the subst rate at ap r e determin ed t e mp e rature by heat  cond uction. Th e  mountin g tab le servi ng as the t emperatu recon tro l u n i tis required t o prop er ly comp ens ate a h eat  di str ibu ti on caused  by a su bs tr at esup porti n g struct ur e o ra d istri b utionof he at t ra ns f ercharact e ri s t icson  t he s ubs tr ate c ause d  by  nonuni formity o f a radi an theat fr om a plasma o ra chamberwa ll. 
Conve n t ionally,  in order to control at emperat ure  of a  top  surfaceofthe su sce p tor (a nd fur theratem p e ratur e of  th esubstrate) , the re ha sbeen  widely  used a method for sup plying a cool ant  who s e  t emp e ra t ure  c o ntr o l led by a chille r unit int oa  c oolant pas s age wa y provi ded ins ide a suscept or or a s usceptorsu ppor t tobe circula ted ther ein. Howe v er, t h eabove  me thod i sdis advan tageou s  in  that  it is  d ifficu lt to  c hange atemperature of the cool ant at  a hi ghspeed and , a l so,  the temp erat ure cannot  be  ra isedand lower ed a t  a  hi g h spe ed d u e to poor re spo n s iv eness in te m p e rat ure c ont r ol. Re cent ly, a plasma proc e ssing, e.g., a  pla s m a e tch i ng,re quires a metho d f or s uccessiv el y processin g a mult il a yer f ilm on  a sub stratet o  b e  proce ssed  in side a si ngl ec hamberin st e ad ofmult ip le cha mbers. In o r d er to implementsuchm e thod, itis cr uc ial toh avea techniqu e capable o f rais ingand l owering  a  tempe rat ur e of a mou n ting tabl e ata highsp eed.  Fo r theabov e reaso ns,ahea ter capab l e  o f  p re c ise ly c ontro ll inga suscept o r temper atu r e and f ur the r a subs t ra t e  temperatu reat ah i gh speed b y  con t ro l lingJouleheat o f a hea t ing  e lementisa t tractingattention aga in .
Me anwhile,  i n ca se  wh er e a lower plate  dual fr equencya p plicat ion type in whi ch  a high freq uency  p o wer sup p l y i s conne c ted  to  asusc ept or i n  view of plasma controlandthe a b ove  heat er in  w hich a h e atin g elemen t  is providedin a susceptori n v i ew o f t e mp er ature con tro l  areused  at 
 semiconductor_device or_an FPD (flat panel_display) is_microprocessed_by using_a_plasma, it is_extremely crucial to_control a temperature and_a temperature distribution_of_a substrate and a plasma density distribution on a substrate to be processed (a_semiconductor_wafer, a_glass_substrate_or the like). If the_temperature of the substrate is_not properly_controlled, it is difficult to secure process uniformity_on_a surface of_the substrate, thereby deteriorating a production yield of a_semiconductor device or a display device.
Generally,_a mounting table_or_a_susceptor for mounting thereon_a substrate to be processed inside_a chamber of a plasma processing_apparatus, especially a capacitively coupled plasma processing_apparatus, functions as a high frequency_electrode for applying a high_frequency power_to a plasma space, as_a support member_for supporting_a substrate by_an electrostatic adsorption or the like_and as a_temperature control unit for controlling the_substrate_at a predetermined_temperature_by_heat conduction._The mounting table_serving_as the_temperature_control unit is required to properly_compensate_a heat distribution caused by a substrate_supporting structure or a_distribution_of heat transfer characteristics_on the substrate caused by_nonuniformity of a radiant heat from_a plasma_or a_chamber wall.
Conventionally, in order to control a temperature of a top_surface of the susceptor (and further_a temperature of the_substrate), there_has_been widely used_a_method for_supplying a coolant whose temperature controlled by_a chiller_unit into a coolant passageway provided_inside a susceptor or_a_susceptor support to be circulated therein._However, the above method is disadvantageous_in that it is difficult_to_change_a temperature of the coolant_at a high speed and, also,_the temperature cannot_be raised and lowered at a high_speed_due to poor responsiveness in temperature_control._Recently, a plasma processing, e.g., a_plasma_etching,_requires a method for successively_processing a multilayer film on a_substrate to be processed inside a single chamber instead_of multiple chambers._In order to implement such_method,_it_is crucial to have a technique capable of raising and_lowering a_temperature of a_mounting table at a high speed. For the above reasons,_a heater capable of precisely controlling a_susceptor temperature and further a substrate temperature at a high speed_by controlling Joule heat of a heating element_is attracting attention again.
Meanwhile, in case where_a lower plate dual_frequency_application type in which a high frequency_power_supply_is_connected to a_susceptor in view_of plasma control_and the_above heater in_which a_heating element is_provided_in a susceptor in view of temperature control are used at