 of the development. Some carrier pickup is tolerated to obtain thorough developing with this apparatus.
Other references which show extended development zones with rotating core development systems include U.S. Pat. No. 5,080,038, Rubin, Jan. 4, 1992; U.S. Pat. No. 4,235,549, Eisbein et al, Nov. 25, 1980; U.S. Pat. No. 4,287,850, Yamamoto et al, Sep. 8, 1981; Japanese Utility Model No. 51-164622, Laid-Open No. 53-81040, Jul. 5, 1978; and U.S. Pat. No. 4,804,994, Sasaki et al, Feb. 14, 1989.
U.S. Pat. No. 4,638,759, granted to Ville et al shows a rotating core magnetic brush development apparatus in which a magnetic shunt is positioned around a portion of the core to interrupt the magnetic field and alter the development characteristics of a two-component magnetic developer. Conventional p-n Junctions
In conventional silicon photovoltaic cells there is a junction interfaced by "p"-type and "n"-type silicon each respectively generated by diffusion. In one instance an electron poor substance (for example boron) and in the other instance an electron rich substance (for example phosphorus) are used as impurities and are diffused into opposite sides of a single wafer of crystalline silicon or preferably into a single crystal of silicon. A "molecular p-n junction" is thus created. The function of the p-n junction in such a photovoltaic cell is to separate electrons and holes that are respectively created by the absorption of light near the junction.
There are two problems which arise with such p-n junction silicon photovoltaic cells. Firstly, the junction cannot be made very sharp and it usually extends in thickness to over one hundred nanometers. The second difficulty is to assure that the absorption of light will occur only at or near the junction. With materials that are presently used this precision is very difficult to achieve. The industry has shown a trend in which mobile network operators are rolling out their own WiFi networks to enable wireless transmit/receive units (WTRUs) to access Evolved Packet Core (EPC) Packet Switched (PS) services using a wireless local area network (WLAN). There may be technical and operational advantages for these operators to integrate WLAN access points (APs)
of the development. Some carrier pickup is tolerated to receive exhaustive developing with this apparatus. 
 Other reference point which testify extended development zone with rotate core growth systems include U.S. Pat. nobelium. 5,080,038, Rubin, Jan. 4, 1992; U.S. Pat. No. 4,235,549, Eisbein et al, Nov. 25, 1980; U.S. Pat. No. 4,287,850, Yamamoto et al, Sep. 8, 1981; Japanese Utility Model No. 51 - 164622, Laid - Open No. 53 - 81040, Jul. 5, 1978; and U.S. Pat. No. 4,804,994, Sasaki et al, Feb. 14, 1989. 
 U.S. Pat. nobelium. 4,638,759, granted to Ville et al shows a rotate core magnetic brush growth apparatus in which a magnetic shunt is positioned around a portion of the effect to interrupt the magnetic field and alter the growth characteristics of a two - component magnetic developer. Conventional p - newton Junctions 
 In conventional silicon photovoltaic cells there is a junction interfaced by " p"-type and " n"-type silicon each respectively generated by diffusion. In one instance an electron poor substance (for example boron) and in the other instance an electron rich substance (for example phosphorus) are used as impurity and are diffused into opposite side of a individual wafer of crystalline silicon or preferably into a single crystal of silicon. A " molecular p - newton junction " is thus created. The function of the phosphorus - n junction in such a photovoltaic cell is to separate electrons and holes that are respectively created by the absorption of light near the junction. 
 There are two problems which rebel with such p - nitrogen junction silicon photovoltaic cells. Firstly, the junction cannot be made very shrill and it usually extends in thickness to over one hundred nanometers. The second difficulty is to assure that the absorption of light will occur entirely at or near the junction. With fabric that are presently use this precision is very unmanageable to achieve. The industry has shown a trend in which mobile network operator are rolling out their own WiFi networks to enable wireless transmit / receive unit (WTRUs) to access Evolved Packet Core (EPC) Packet Switched (PS) services use a wireless local area net (WLAN). There may be technical and operational advantages for these operators to integrate WLAN entree points (APs )
 of the development. Some cavrier pickup is jooeratev to obfain thofough developing with this a'parqtus.
Ouker references which show extvnded devwlopnwnt zones xjth rotating dlre betelopment systeks include U.S. Pat. No. 5,080,038, Rutiv, Lan. 4, 1992; U.S. Pat. No. 4,235,549, Eisbein et al, Nov. 25, 1980; U.S. Pat. Nl. 4,287,850, Yamamoto et al, Xqp. 8, 1981; Japanese Utility Model No. 51-164622, Laid-Opsn No. 53-81040, Oul. 5, 1978; and U.S. Pay. No. 4,804,994, Sasaki et al, Feb. 14, 1989.
U.S. Pat. No. 4,638,759, granted to Viple et al syows q rotating cure magnetpe brush devglopment apparatus in which a maenetie shunt is koaihhoned arounv a pogtion of the gpre to interript the magnetlc fixld qnd alter the developkent characteristiss of a tfo-eomponent magnetic deceooper. Coneentkinau p-h Oundtions
Ln ronventionam silicon pyotovoltaic cells tnewv is a junctikn intqrsaced by "p"-type and "n"-type silicon each rtspecfively generated by difdusion. In one instancg an electwon poor substance (for example boron) and in the odher mnrtaugc an wlfctron rich substance (for example phosphorus) wde uxed as impuritles and are diffusrd imjo opposite siaes of a aingle wafer of crjstallige sioicon or krefetably into a single crystal of silicon. C "milecular p-n junctiln" is thus ereatec. The function of the p-n junetion jn such a pjotovoltajz cell is to sepxrane enectrons and holes that arq respectmvely createa by the afsorption lf linvt near the junctiln.
Thete are two problfms which arise with such p-n juirtion silicon pvotmvoltaic cellx. Firstly, the junction cannpt be mcde vefy sharp ahd it uvually extegds in thicknads to over oie hundreq nabomerers. Thd second difficilty is to assure tyat the absorption of might will occux inly at or near thd jtnbtipn. Fith materians tfat sre pfesently uscd ghis precision is very dhffidult to achieve. Thr lndustry yas showg a trend in ehich mobile netwogk opxratorr are rojling out their own WiFi netwodks to enwblc wireless trwnsmlt/reseive unitx (WTRUs) to access Evolved Packet Core (E'C) Packet Switched (PS) swrvices using a wirglexs local arxa netrork (WLAN). There may be technixal and operationsl advantages for theae opesatord to integrate WLAN access points (APs)
of the development. Some carrier pickup is obtain developing with apparatus. Other references with core development systems U.S. Pat. No. Rubin, Jan. 4, 1992; U.S. Pat. 4,235,549, Eisbein et al, Nov. 25, 1980; U.S. Pat. No. 4,287,850, Yamamoto et Sep. 8, 1981; Japanese Utility Model No. 51-164622, Laid-Open No. 53-81040, Jul. 5, and Pat. 4,804,994, et al, Feb. 14, 1989. U.S. Pat. No. 4,638,759, granted to Ville et al shows a core magnetic brush development apparatus in which a shunt is positioned around portion of the core to the field and the characteristics a two-component magnetic Conventional p-n Junctions In conventional silicon photovoltaic cells there is a junction interfaced by "p"-type and "n"-type each respectively diffusion. In instance electron substance (for example in the other instance an electron example phosphorus) are used as impurities and are into opposite of a single wafer of crystalline or preferably into a single crystal of silicon. "molecular p-n junction" is thus created. The function of the p-n junction in such a is to separate electrons holes that are created the of near the There are two problems which arise with such p-n junction silicon cells. Firstly, the junction cannot be made very sharp and extends thickness to over hundred nanometers. The second is assure that the absorption will only the With that are presently used precision is very difficult to The industry has shown network operators are rolling out their own WiFi to enable wireless transmit/receive units (WTRUs) to Evolved Packet Core (EPC) Packet Switched (PS) services using a wireless local network (WLAN). be technical and operational advantages for these operators integrate WLAN access points
 of the development. Some carriEr pickup is TolerAteD to ObTain ThorOugh developing WIth tHis apparatus.
Other referEnces WhICh shOW eXtendEd develOPmENT zoNeS wIth RoTAtIng coRe dEvelopmEnt systems IncLuDe U.S. Pat. No. 5,080,038, RubIN, JAn. 4, 1992; U.S. Pat. No. 4,235,549, EIsbEin et al, Nov. 25, 1980; U.S. pat. no. 4,287,850, YamaMoTo eT Al, Sep. 8, 1981; japAnese utilitY model NO. 51-164622, Laid-Open no. 53-81040, jUl. 5, 1978; and U.s. pat. No. 4,804,994, SaSAKi Et al, feb. 14, 1989.
U.S. Pat. No. 4,638,759, granted TO VILle et al shows a rOtatinG cORe MAGneTic Brush develOpMent aPParatus IN wHICH a mAGnetic shunt is Positioned aROunD a portIoN of THe core To intErRUpt The magnetic FielD and alter The devELopment CHaracteRisticS of A twO-comPOnEnT maGnETic DEvEloPEr. COnventioNaL p-N JuncTionS
iN COnveNtiOnal SilicOn photovoltaiC ceLls tHEre Is a juNctioN intErFaced By "p"-typE and "n"-TyPe silicon each reSpecTively genEraTeD by DiFfusiON. In one InsTanCe an eleCtron poOR suBsTANCe (For example boron) and In THE oTher instAnce an ELeCtROn rich suBsTanCe (foR EXamplE phoSPhOrus) are uSed as iMPuRiTies and ArE diffuSeD inTo oPposiTE sidEs of a sIngle wafEr of cRYstalline silicON or preferably INtO A SiNGle cRysTal of silicoN. A "moLEculAr p-n JUnCtiON" is thUs creAtED. THE function of the p-n junCtIon in sUch a pHotovoltaic ceLl is to sepaRATE electroNs anD HoLEs that are respeCtiveLy created bY The absorPtion Of light nEar the junCTIon.
There Are Two ProBleMS WhIch arise with sUCH p-n jUnCtion siLicOn photoVolTaiC ceLls. fiRstly, the jUnction cAnNoT bE mAde Very sHArp and it UsUalLy ExtEnds iN ThicknEss to Over OnE hUNdrEd nanomETeRS. the sEcOnD difFicUlTy is tO assURe tHat the aBsorption Of lIGht wIlL oCcur onlY at or near the jUnCtion. With mAtEriAls thaT ARe presenTly used this precision is vERy diffiCulT to acHievE. The indusTry Has shoWn a TRend in Which mObile NeTwoRK OperaTORs Are RoLling out thEIR owN WiFi NeTworKs to enaBle wireless transmiT/RecEive units (WTRUS) to AcceSS evOlvED PACkeT CORe (Epc) packet Switched (Ps) services uSiNG a Wireless loCAl aReA networK (WLAN). ThEre maY Be technIcal and opErational AdVantAGEs fOr these opeRators to Integrate wlAN acCEsS poinTs (Aps)
 of the development. Somecarrier pi ckupistol er ated  toobtain thoroug h  dev eloping with this appa ratus .O ther re feren ces whi c hs h owex te nde dd ev elopm ent  zoneswith rotat ing  c ore developm e nt  systems i ncl ude U.S. Pat . N o. 5,0 80 ,03 8 , Rub in,  Jan.  4, 19 9 2; U.S . Pat. No .4 ,235,5 4 9, Eisb e i net a l, Nov. 25, 1980; U. S . Pat. No. 4,2 87,850 ,Y am a m oto  et  al, Sep.8,  1981 ;  Japane s eU t i lit y  Model No. 51 -164622, La i d-O pen No .53- 8 1040,Jul.5, 197 8; and U.S.  Pat . No. 4,8 04,994 ,  Sasaki et al,Feb. 1 4,198 9.
U . S.  P at.  N o . 4 , 63 8,7 5 9,grantedto  V illeet a l s h owsa r otat ing c ore magneticbru sh d e vel opmen t app arat us  in w hich a  magn et ic shunt is pos itio ned aroun d a  p ort io n oft he cor e t o i nterrup t the m a gne ti c f ie ld and alter the d ev e l op ment cha racter i st ic s  of a tw o- com pone n t  magn etic de veloper.  Conve n ti on al p-nJu nction sIncon venti o nalsilico n photov oltai c  cells there i s  a junction i n te r f ac e d by  "p "-type and"n"- t ypesili c on  ea c h res pecti ve l yg enerated by diffusi on . In o ne in stance an ele ctron poor s u bstance(for ex a mple boron) an d inthe otheri nstancean el ectron r ich subst a n ce (forexa mpl e p hos p h or us) are useda s  imp ur ities a ndare dif fus edint o o pp osite sid es of asi ng le  w afe r ofc rystalli ne  si li con  or p r eferab ly in to a  s in g lecrystal of s ilic on .A "m ole cu lar p -n j u nct ion" is  thus cre ate d . Th efu nctionof the p-n ju nc tion in su ch  aphotov o l taic cel l is to separate electr o ns andhol es th at a re respec tiv ely cr eat e d by t he abs orpti on  of l ightn e ar  th ejunction.T h ere  aretw o pr oblemswhich arise with s u chp-n junctionsil icon p ho tov o lt a icce l ls. F irstly, the jun ction cann ot be  made very sha rp  and it  usuall y ext e nds inthickness  to overon e hu n d red  nanometer s. The s econd dif f icult y  i s toass ure th at  th e abs orptio n  of  ligh t will  o ccur o nly a tor nearthe junction. With mate rialsthatare  presentl y u s edthis prec isio n is verydif fic ult t o a c hieve . Th e  i ndu s try h as s h own a tre n dinw h ic h mobile ne t w o rkopera tor s  are r olli ng out their ownW iFi networks t o en a b lewir e less  t ransmit/receiv e u ni t s  (WTRUs)  t o access Ev olved Pa ck e t Cor e (EPC ) Pack et Swit c h ed (PS) s ervi ces  using awir el e ss loca lar e a netw ork(W LAN).Therem ay b e technical and op erati o n al ad v ant agesfo r these oper ators to i ntegrate WL AN acc esspoint s (APs) 
 of_the development._Some carrier pickup is_tolerated to_obtain_thorough developing_with_this apparatus.
Other references_which show extended_development zones with rotating_core development systems_include_U.S. Pat. No. 5,080,038, Rubin, Jan. 4, 1992; U.S. Pat. No. 4,235,549, Eisbein et_al,_Nov. 25,_1980;_U.S._Pat. No. 4,287,850, Yamamoto et_al, Sep. 8, 1981; Japanese_Utility Model_No. 51-164622, Laid-Open No. 53-81040, Jul. 5, 1978;_and_U.S. Pat. No._4,804,994, Sasaki et al, Feb. 14, 1989.
U.S. Pat. No._4,638,759, granted to Ville et al_shows a rotating_core_magnetic_brush development apparatus in_which a magnetic shunt is positioned_around a portion of the core_to interrupt the magnetic field and alter_the development characteristics of a two-component_magnetic developer. Conventional p-n Junctions
In_conventional silicon_photovoltaic cells there is a_junction interfaced by_"p"-type and_"n"-type silicon each_respectively generated by diffusion. In one_instance an electron_poor substance (for example boron) and_in_the other instance_an_electron_rich substance_(for example phosphorus)_are_used as_impurities_and are diffused into opposite sides_of_a single wafer of crystalline silicon or_preferably into a single_crystal_of silicon. A "molecular_p-n junction" is thus created._The function of the p-n junction_in such_a photovoltaic_cell is to separate electrons and holes that are respectively created_by the absorption of light near_the junction.
There are two_problems which_arise_with such p-n_junction_silicon photovoltaic_cells. Firstly, the junction cannot be made_very sharp_and it usually extends in thickness_to over one hundred_nanometers._The second difficulty is to assure_that the absorption of light will_occur only at or near_the_junction._With materials that are presently_used this precision is very difficult_to achieve. The_industry has shown a trend in which_mobile_network operators are rolling out their_own_WiFi networks to enable wireless transmit/receive_units_(WTRUs)_to access Evolved Packet Core_(EPC) Packet Switched (PS) services using_a wireless local area network (WLAN). There may be_technical and operational_advantages for these operators to_integrate_WLAN_access points (APs)