 connected to form circuits, which enable the semiconductor device to perform high-speed calculations and other useful functions.
Semiconductor devices are generally manufactured using two complex manufacturing processes, i.e., front-end manufacturing, and back-end manufacturing, each involving potentially hundreds of steps. Front-end manufacturing involves the formation of a plurality of die on the surface of a semiconductor wafer. Each die is typically identical and contains circuits formed by electrically connecting active and passive components. Back-end manufacturing involves singulating individual die from the finished wafer and packaging the die to provide structural support and environmental isolation.
One goal of semiconductor manufacturing is to produce smaller semiconductor devices. Smaller devices typically consume less power, have higher performance, and can be produced more efficiently. In addition, smaller semiconductor devices have a smaller footprint, which is desirable for smaller end products. A smaller die size may be achieved by improvements in the front-end process resulting in die with smaller, higher density active and passive components. Back-end processes may result in semiconductor device packages with a smaller footprint by improvements in electrical interconnection and packaging materials.
The electrical interconnection in a fan-out wafer level chip scale package (FO-WLCSP) containing semiconductor devices stacked on multiple levels can be accomplished with conductive through silicon vias (TSV), through hole vias (THV), or Cu-plated conductive pillars. Vias are formed in silicon or organic material around the die using laser drilling or deep reactive ion etching (DRIE). The vias are filled with conductive material, for example by copper deposition using an electroplating process, to form the conductive TSVs and THVs. The TSVs and THVs further connect through build-up interconnect structures which are formed across each semiconductor die. The TSVs and THVS and build-up interconnect structure have limited input/output (I/O) pin count and interconnect capability, particularly for FO-WLCSP.
The semiconductor die are typically mounted to one side of the build-up interconnect structure in the FO-WLCSP. To accommodate the die, the build-up interconnect structure must be relatively large, which increases manufacturing cost. Alternatively, if the die are mounted to both sides of the build-up interconnect structure, the height of the bumps must be greater than the height of the upper die in order to bond the bumps to the build-up interconnect structure. The large height and corresponding width of the bumps increases the bump pitch and reduces I/O pin count, which
connected to form circuits, which enable the semiconductor device to do eminent - speed calculations and early useful function. 
 Semiconductor devices are broadly manufacture using two complex fabrication summons, i.e., front - end fabrication, and back - end manufacturing, each involving potentially hundreds of step. Front - end manufacturing involves the formation of a plurality of die on the open of a semiconductor wafer. Each die is typically identical and contains circuits shape by electrically connecting active and passive components. Back - end manufacturing involve singulating individual die from the finished wafer and packaging the die to provide structural documentation and environmental isolation. 
 One goal of semiconductor manufacturing is to produce smaller semiconductor devices. Smaller devices typically consume less power, have higher performance, and can be produced more efficiently. In addition, smaller semiconductor device device have a small footprint, which is desirable for little end products. A smaller die size may be achieve by improvements in the front - goal process resulting in die with little, higher density active and passive components. Back - end processes may result in semiconductor device device packages with a smaller footprint by improvements in electrical interconnection and packaging materials. 
 The electrical interconnection in a sports fan - out wafer degree chip scale package (FO - WLCSP) containing semiconductor devices stacked on multiple degree can be accomplished with conductive through silicon vias (TSV), through hole vias (THV), or Cu - plated conductive pillars. Vias are formed in silicon or constituent material around the die using laser drilling or deep reactive ion etching (DRIE). The vias are fill with conductive material, for model by copper deposit using an electroplating process, to imprint the conductive TSVs and THVs. The TSVs and THVs further connect through build up - up interconnect structure which are formed across each semiconductor device die. The TSVs and THVS and build - up interconnect structure have limited input / output signal (iodine / O) pin count and complect capability, particularly for FO - WLCSP. 
 The semiconductor die are typically mounted to one side of the build - up interconnect structure in the FO - WLCSP. To accommodate the die, the build up - up interconnect structure must be relatively large, which increases manufacturing cost. Alternatively, if the die are mounted to both sides of the build up - up interconnect social organization, the altitude of the bumps must be greater than the height of the upper die in order to adhere the bumps to the build - up interconnect structure. The big height and corresponding width of the bumps increases the bump lurch and reduces I / O pin count, which
 cojnected to form circuits, which enable tkw semironductkr devicd to perform high-speed calcuparions and other useful funcgions.
Semibonductor devmces are generally manufactures usiug two complex msnufacturitg processes, i.a., wrlnt-end manufacturing, and back-end magufactutijg, each involvyng kotqntizlly hundreds of steps. Front-end mahufactuging involves the formation of a plurality lf dle on the surface lf a semicobduceir wafer. Eacf die is tj'ically idehtical and contains circuits fofmed yy electricqloy fmnnecting artive wnd passive gpmponetts. Bacl-end manufactuving mnvooves singulating inditidual die from the sinished fayer and packaging the due to proeide wtrjcthrel aupporh aid environmsntal isolarion.
One goal of semocjbductor manufzcturigg is to produce smaller semiconductor denicea. Smaller devices typicqlly consume less powgr, have hidher performance, and can be produced more efficiettly. Mn adblbion, wmwller semiconductor devices have a smaller fojfptikt, which is desivable for smaller rnf ltoducts. A smaluer diz sjze may be achievef by imkrovemwnts in tre ftont-end process resulting ib die with siqller, higher densicy active anb passove cpmponents. Back-end procerses may result in semickvductor device pxcksgas with a smaller footprine by imprivemznts in dlecjrical ynterconneftion and packaging mategials.
Jhe elactrical ijterconnection in a fan-out wafec level chip xcdle package (FO-WLGSP) containing femiconductor bevices ftackdd on multpple levens can be ascomplished whjh conductive through silucon vias (TRX), through hole vias (THV), or Cu-platwd conductive pillers. Xjas are formed nu wilicon or orgamic maeegiak wsound the dia uskng kaser drilling ov ddep teactive ion etching (DRIS). The vias are filkeq with cinductivq material, fot example by coppeg depmsivion uxind an electroplating process, to form the cokductive TSVs and THVs. The TSRs and THVs further connect through builv-up interconnect strucjures which are formeb scross each semisonductor die. The TSVs and THCS and build-up inuerconnect structure habe limhted lnput/output (I/O) pin count and interconnect capability, particularly for FO-WOCSP.
Thx femiconductkr doe arv tvpieally mjuntxd to one side of nhe build-up interconnect structuce in the XO-CLCSP. To accommodate the die, yhd build-up intgrconnect structure must bs relatifely large, which increases manugacturing cost. Alternatiyely, if tye dis are mounved to both sides of the bbild-up intercinnegt structure, tfe nelght of thf bukpa must be greater than the heighr of tye upper die in orver to bond bht bumps to thg build-up intercohnecf struzture. The larbe height and vorresponding width mf the bumps incevases the bumk pitch dnd reduces M/O pin count, which
connected to form circuits, which enable the to high-speed calculations other useful functions. using complex manufacturing processes, front-end manufacturing, and manufacturing, each involving potentially hundreds of Front-end manufacturing involves the formation of a plurality of die on the surface a semiconductor wafer. Each die is typically identical and contains circuits formed by connecting and components. manufacturing involves singulating individual die from the finished wafer and packaging the die to provide structural and environmental isolation. One goal of semiconductor manufacturing to produce smaller semiconductor Smaller devices typically consume less have performance, and be more In addition, smaller devices have a smaller footprint, which is desirable for smaller end products. A smaller die size may achieved by the front-end resulting die smaller, higher density passive components. Back-end processes may result packages with a smaller footprint by improvements in interconnection and materials. The electrical interconnection in a wafer level chip scale package (FO-WLCSP) containing semiconductor stacked on multiple levels can be accomplished with conductive through silicon vias (TSV), through hole or Cu-plated conductive pillars. are formed in or material the using laser or deep reactive ion etching (DRIE). The vias are filled with material, for example by copper deposition using an electroplating process, the TSVs and THVs. TSVs and THVs further through interconnect structures which are each die. THVS build-up structure have limited input/output pin count and interconnect capability, for FO-WLCSP. The semiconductor one side of the build-up interconnect structure in FO-WLCSP. To accommodate the die, the build-up structure must be relatively large, which increases manufacturing cost. Alternatively, if the are mounted sides of the build-up interconnect structure, the height the bumps must be than the height of the upper die in order bond bumps to build-up interconnect structure. large height and width of the the bump and I/O
 connected to form circuits, whIch enable tHe semIcoNduCtOr deVice To perform high-sPEed cAlculations and other useFul fuNcTIons.
sEmIcondUctor deVIcES Are GeNeRalLy MAnUfactUreD using tWo complex mAnuFaCturing proceSSeS, i.e., front-enD maNufacturing, aNd bAck-end MaNufACturiNg, eAch inVolvinG PotentIally hundReDS of stePS. Front-eND MaNufaCturing involves thE FoRMation of a pluraLity of DiE On THE suRfaCe of a semicOnDuctoR Wafer. EaCH dIE IS tyPIcally identicAl and contaiNS ciRcuits FoRmeD By elecTricaLlY ConNecting actiVe anD passive cOmponeNTs. Back-eND manufaCturinG inVolVes sINgUlAtiNg INdiVIdUal DIe fRom the fiNiShEd wafEr anD PACKagiNg tHe diE to prOvide structurAl sUppoRT anD enviRonmeNtal IsOlatiOn.
One gOal of SeMiconductor manuFactUring is to ProDuCe sMaLler sEMicondUctOr dEvices. SMaller dEVicEs TYPIcAlly consume less powEr, HAVe Higher peRformaNCe, AnD Can be proDuCed More EFFicieNtly. iN aDdition, sMaller SEmIcOnductoR dEvices HaVe a SmaLler fOOtprInt, whiCh is desiRable FOr smaller end prODucts. A smaller DIe SIZe MAy be AchIeved by imprOvemENts iN the FRoNt-eND procEss reSuLTiNG in die with smaller, hiGhEr densIty acTive and passivE componentS. bACk-end proCessES mAY result in semicOnducTor device pACkages wiTh a smAller fooTprint by iMPRovementS in EleCtrIcaL INtErconnection aND PackAgIng mateRiaLs.
The elEctRicAl iNteRcOnnection In a fan-ouT wAfEr LeVel Chip sCAle packaGe (fO-WlCsP) cOntaiNIng semIcondUctoR dEvICes Stacked ON mULTiplE lEvEls cAn bE aCcompLishED wiTh conduCtive throUgh SIlicOn ViAs (TSV), thRough hole vias (tHv), or Cu-plateD cOndUctive PILlars. ViaS are formed in silicon or orGAnic matEriAl aroUnd tHe die usinG laSer driLliNG or deeP reactIve ioN eTchING (DRIE). tHE vIas ArE filled witH COndUctivE mAterIal, for eXample by copper depoSItiOn using an elecTroPlatING pRocESs, TO foRm THe cONDuctive TSVs and ThVs. The TSVs AnD tHvs further cONneCt Through Build-up InterCOnnect sTructures Which are fOrMed aCROss Each semicoNductor dIe. The TSVs ANd THVs AnD builD-up IntercOnNecT struCture hAVe lImiteD input/OuTput (I/O) Pin coUnT and inteRconnect capability, partiCularlY for Fo-WLcSP.
The semIcoNDucTor die are TypiCally mountEd tO onE side Of tHE builD-up iNTeRcoNNect sTrucTUre in the Fo-wLcSP. tO AcCommodate thE DIE, thE builD-up INtercoNnecT structure must be rELatively large, wHich INCreAseS ManuFaCturing cost. AltErnAtIVEly, if the DiE are mounted To both siDeS Of the Build-uP interConnect STRuCTure, thE heiGht Of the bumpS muSt BE greateR tHaN The heiGht oF tHe uppeR die in ORder TO Bond the bumps to thE builD-UP inteRConNect sTrUcture. THE larGe height anD correspondIng widTh of The buMps incrEaSes the BumP pItch and redUCes I/O pin cOunt, wHich
 connected to form circuit s, which e nable  th e s em icon duct or device to p e rfor m high-speed calculati ons a nd othe r  u seful  functi o ns . Sem ic on duc to r  d evice s a re gene rally manu fac tu red using tw o  c omplex man ufa cturing proc ess es, i. e. , f r ont-e ndmanuf acturi n g, and  back-end  m a nufact u ring, e a c hinvo lving potentially hu n dreds of steps . Fron t- e nd m anu fac turing inv ol ves t h e forma t io n o f a plurality ofdie on thes urf ace of  a  se m icondu ctorwa f er.  Each die i s ty pically i dentic a l and c o ntainscircui tsfor medb yel ect ri c all y  c onn e cti ng activ ean d pas sive c o m pone nts . Ba ck-en d manufacturi nginvo l ves  sing ulati ng i nd ividu al die  from  t he finished waf er a nd packag ing  t hedi e top rovide  st ruc tural s upporta nden v i r on mental isolation.On e go al of se micond u ct or manufact ur ing  ist o  prod uces ma ller sem icondu c to rdevices .Smalle rdev ice s typ i call y cons ume less  powe r , have higherp erformance, a n dc a nb e pr odu ced more ef fici e ntly . In ad dit i on, s malle rs em i conductor devices h av e a sm aller  footprint, w hich is de s i r able for  sma l le r  end products.  A sm aller dies ize maybe ac hieved b y improve m e nts in t hefro nt- end p ro cess resultin g in d ie  with s mal ler, hi ghe r d ens ity  a ctive and  passive  c om po ne nts . Bac k -end pro ce sse smay  resu l t in s emico nduc to rd evi ce pack a ge s with  a  s mall erfo otpri nt b y  im proveme nts in el ect r ical  i nt erconne ction and pac ka ging mater ia ls. 
The e l e ctricalinterconnection in a fa n -out wa fer  leve l ch ip scalepac kage ( FO- W LCSP)contai ningse mic o n ducto r de vic es  stacked o n mul tiple  l evel s can b e accomplished wit h  co nductive thro ugh  sil i c on  vi a s( TSV ), thr o u gh hole vias (T HV), or Cu -p l at ed conduct i vepi llars.Vias ar e for m ed in s ilicon or  organicma teri a l  ar ound the d ie using  laser dr i lling or  deep  re active  i onetchi ng (DR I E).  Thevias a re  fille d wit hconducti ve material, for exampl e by c opper  de positionusi n g a n electro plat ing proces s,toformthe condu ctiv e  T SVs and T HVs. The TSVsa nd  TH V s  f urther conn e c t  th rough  bu i ld-upinte rconnect structur e s which are fo rmed a cro sse achse miconductor di e.Th e TSVs and  T HVS and bui ld-up in te r conne ct str ucture  have l i m it e d inpu t/ou tpu t (I/O) p inco u nt andin te r connec t ca pa bility , part i cula r l y for FO-WLCSP.The s e m icond u cto r die  a re typi c ally  mounted t o one sideof the  bui ld-up  interc on nect s tru ct ure in the FO-WLCSP.  To a ccommod at e th e d ie, th e bu i l d-upinte rc onn ect struc t u re mu st berela tivel ylarg e, whichi ncreases  ma n ufactur in g c o s t. Alt e rn a t ively, ifthe  diea r e mountedt o bo t hs idesof the  build -up int e rco nn ect str uct u r e, the he ight of t h e b um ps m ust be g re ater  t han  t he height of th e upperdie in o r d er tobon d  the bumpsto  the build-u p int er c onnects t ruc ture. T h e l arg e h eigh t a nd c o rresponding width of the  bum ps in c rea ses t he bu mp  pitch a n d re duces I/ O  pin count, w hich
 connected_to form_circuits, which enable the_semiconductor device_to_perform high-speed_calculations_and other useful_functions.
Semiconductor devices are_generally manufactured using two_complex manufacturing processes,_i.e.,_front-end manufacturing, and back-end manufacturing, each involving potentially hundreds of steps. Front-end manufacturing involves_the_formation of_a_plurality_of die on the surface_of a semiconductor wafer. Each_die is_typically identical and contains circuits formed by electrically_connecting_active and passive_components. Back-end manufacturing involves singulating individual die from the_finished wafer and packaging the die_to provide structural_support_and_environmental isolation.
One goal of_semiconductor manufacturing is to produce smaller_semiconductor devices. Smaller devices typically consume_less power, have higher performance, and can_be produced more efficiently. In addition,_smaller semiconductor devices have a_smaller footprint,_which is desirable for smaller_end products. A_smaller die_size may be_achieved by improvements in the front-end_process resulting in_die with smaller, higher density active_and_passive components. Back-end_processes_may_result in_semiconductor device packages_with_a smaller_footprint_by improvements in electrical interconnection and_packaging_materials.
The electrical interconnection in a fan-out wafer_level chip scale package_(FO-WLCSP)_containing semiconductor devices stacked_on multiple levels can be_accomplished with conductive through silicon vias_(TSV), through_hole vias_(THV), or Cu-plated conductive pillars. Vias are formed in silicon or_organic material around the die using_laser drilling or deep_reactive ion_etching_(DRIE). The vias_are_filled with_conductive material, for example by copper deposition_using an_electroplating process, to form the conductive_TSVs and THVs. The_TSVs_and THVs further connect through build-up_interconnect structures which are formed across_each semiconductor die. The TSVs_and_THVS_and build-up interconnect structure have_limited input/output (I/O) pin count and_interconnect capability, particularly_for FO-WLCSP.
The semiconductor die are typically mounted_to_one side of the build-up interconnect_structure_in the FO-WLCSP. To accommodate the_die,_the_build-up interconnect structure must be_relatively large, which increases manufacturing cost._Alternatively, if the die are mounted to both sides_of the build-up_interconnect structure, the height of_the_bumps_must be greater than the height of the upper die_in order_to bond the_bumps to the build-up interconnect structure. The large height and_corresponding width of the bumps increases the_bump pitch and reduces I/O pin count, which