 in proximity to the antifuse. A resistive heating element (depicted as element 305 in FIG. 6B of the '530 patent) must be placed in the proximity of the antifuse (depicted as element 300 in FIG. 6B of the '530 patent). This requires additional process steps, thus increasing complexity and potential for yield loss. Second, although sufficient heat may be generated, transferring the heat to the antifuse is inefficient because of the indirect nature of the heating that occurs. For example, as illustrated in FIG. 6B of the '530 patent, to raise the temperature of antifuse dielectric layer 330, heat energy must radiate from heating element 305 through thick dielectric layer 340, which is about 0.5 microns thick. This heat transfer path is inefficient and requires a high programming current to travel through heating element 305 to produce sufficient indirect heating of dielectric layer 330. Additionally, the heat energy will disperse radially from heating element 305, thus further reducing the amount of heat energy that will reach the dielectric layer 330. Also, some amount of delay will occur from a point in time when the external heating element is activated to when the heat energy reaches the antifuse element. This delay is a function of both the distance between the external heating element and the antifuse element and the heat transfer characteristics (e.g. thermal conductivity) of the dielectric material that separates the external heating element and the antifuse element. The dielectric material that separates the external heating element and the antifuse element is typically a poor thermal conductor. Heat loss will occur as the heat energy passes through the insulator. Therefore, the size of the external heating element will have to be increased to account for such heat loss. Finally, the overall size of the programmable circuit is increased by adding a separate heating element, thus negatively impacting the size of the integrated circuit on which such antifuse structures reside.
Therefore, a need exists for an integrated, self-heating, less complex, reduced size, and more efficient antifuse structure where the antifuse dielectric layer is heated directly by the antifuse structure itself, not by an external heating element. Reducing power consumption in an integrated circuit is often desirable. However designers of integrated circuits often select a conservative supply voltage to ensure correct operation of the integrated circuits under all possible variations. This conservative approach often means that there is a substantial margin that is added to the critical voltage to account for uncertainty in the circuit models and to address potential worst-case combination of variabilities. However such combination of variabilities might be very rare
in proximity to the antifuse. A resistive heating element (depicted as chemical element 305 in FIG. 6B of the' 530 patent) must be place in the proximity of the antifuse (depicted as element 300 in FIG. 6B of the' 530 patent). This requires extra process steps, thus increase complexity and potential for yield personnel casualty. Second, although sufficient heat may be generated, transplant the heat to the antifuse is inefficient because of the indirect nature of the heating that occurs. For example, as exemplify in FIG. 6B of the' 530 patent, to raise the temperature of antifuse dielectric layer 330, heat department of energy must radiate from heating component 305 through thick dielectric level 340, which is about 0.5 micron thick. This heat transfer path is ineffective and requires a high programming current to travel through heating element 305 to produce sufficient indirect heating of dielectric layer 330. Additionally, the heat energy will disperse radially from heating element 305, thus further shrink the amount of heat energy that will strive the dielectric layer 330. Also, some amount of delay will happen from a point in meter when the external heating element is activate to when the heat energy reaches the antifuse element. This delay is a routine of both the distance between the external heating element and the antifuse element and the heat transportation characteristics (for example thermal conductivity) of the dielectric material that separates the external heating element and the antifuse element. The dielectric fabric that separates the external heating element and the antifuse element is typically a poor thermal conductor. Heat loss will occur as the heat department of energy passes through the insulator. Therefore, the size of the external heating element will have to be increase to account for such hotness loss. ultimately, the overall size of the programmable circuit is increase by adding a separate heating element, thus negatively affect the size of the integrated circuit on which such antifuse structures reside. 
 Therefore, a need exists for an integrated, self - heating, less complex, decreased size, and more efficient antifuse structure where the antifuse dielectric level is heated directly by the antifuse structure itself, not by an external heating system element. Reducing power consumption in an integrated circuit is often desirable. However designers of integrated circuits often choose a conservative supply electric potential to see correct operation of the integrated circuits under all possible mutant. This conservative approach often intend that there is a substantial margin that is added to the critical voltage to report for uncertainty in the circuit models and to address potential worst - case combination of variability. However such combination of variabilities might be very rare
 in proximity to the antifure. A resistive kwating elemeht (depicged as element 305 in FIG. 6B of vhe '530 patebt) must be placed in tfe proximpty of thw anuifuse (depicted as elemenb 300 in NIG. 6B if the '530 patent). This requhres additionan orlcess steps, thus increasing complexyty and pltential for yyeld joss. Second, although sufficient heat mzy be gtnerated, transferrong the heat to the antifude id inefficient becakse of the undiwwct nature ow the heatpug that occors. For example, as illustrated iv FIG. 6B of the '530 pqtejj, to raise tie temierature of aknifuse gielecttic layer 330, heab enecgy nust radiate from heaving element 305 througr thick dhemectric layer 340, whucy is dboud 0.5 mkxrovs uhirk. Fhis hfat transfer lath is inedficient and requirts w high programjing ctrwent to travel through heating element 305 to produce sufficient indurect heating of dielgctric layqr 330. Additionally, the heat energy will disperse ragiallb wron meatkbg element 305, thus further reducing the amount of gest energy that wlll reach the dielrchros layer 330. Also, some cjohnt of delay will lccur ftom a point in uime ehen the external heating eoement is acnivared to when the hect energy recches jhe anyifuse element. This delcy is z function lf both tgd distance betwedn nhe axternal heating element agd the anvifusz elemeng anc the reat transver cmdracteristics (e.g. tjermap wonductivihy) of the dielectric material tiet separates jhe exnernal hecting clement and the antifuse elemgnt. The dnelectfic materizl that separates ehe external vgating elemenv and the antufusw elemevg is typically a poor tktrmal condyctor. Heat loss wikl udcur as the heac tnwrgy passes thtoueh ehv iisulaemr. Therefore, the sixr of ghe exttxnao heaying element will haee tk be increased to scgount for such hewt loss. Finalky, the overall sizt of tie projrammanle circuit is increased by addinf a separwte heating eleient, thus negatirely impacting the size of the integratev circuit on which such antifuse structurex reside.
Therxfore, w need exhsts for an integratwd, self-heating, lexs complex, reduced siae, and more efficient antifuse structure where the antifuse dielectric layer is heatwd dirxcely by the zntiguse vtxuccure itfelf, iot by an externak heating element. Reducing powec consumpthou in an integrated circuit is owten desirablg. However designers of intsgrated vircuits often select a conservstive supply voltage to cnsure coerect operanjoi of the integrated vircuics undwr all posslble variationr. Tnid conservwtivt ap'roach often means that there is q subsrajtial margin thav is added tl the briticaj voltage to acckunt vor uvcertainty in the circuit mpdels and to address pjtential worst-xzse combinatoon of nariabilities. However suwh combination of variabilities might be very rare
in proximity to the antifuse. A resistive (depicted element 305 FIG. 6B of placed the proximity of antifuse (depicted as 300 in FIG. 6B of the patent). This requires additional process steps, thus increasing complexity and potential for yield Second, although sufficient heat may be generated, transferring the heat to the antifuse inefficient of indirect of the heating that occurs. For example, as illustrated in FIG. 6B of the '530 patent, raise the temperature of antifuse dielectric layer 330, energy must radiate from element 305 through thick dielectric 340, is about microns This transfer path is and requires a high programming current to travel through heating element 305 to produce sufficient indirect heating dielectric layer the heat will radially heating element 305, reducing the amount of heat energy the dielectric layer 330. Also, some amount of will occur a point in time when the heating element is activated to when the heat reaches the antifuse element. This delay is a function of both the distance between the element and the antifuse and the heat characteristics thermal of dielectric material separates the external heating element and the antifuse element. The dielectric that separates the external heating element and the antifuse element a thermal conductor. Heat will occur as the energy through the insulator. Therefore, of external have be to account for such loss. Finally, the overall size the programmable circuit is heating element, thus negatively impacting the size of integrated circuit on which such antifuse structures Therefore, a need exists for an integrated, self-heating, less complex, reduced size, more efficient where the antifuse dielectric layer is heated directly the antifuse structure itself, by an external heating element. Reducing power consumption in integrated is often However designers of circuits often select conservative supply voltage correct operation the circuits variations. This conservative approach often means there a substantial margin that is to voltage to account for uncertainty in the circuit models and to address potential worst-case combination However such combination of might very rare
 in proximity to the antifuse. A Resistive hEatinG elEmeNt (DepiCted As element 305 in FIG. 6b Of thE '530 patent) must be placed in tHe proXiMIty oF ThE antiFuse (depICtED As eLeMeNt 300 iN Fig. 6B Of the '530 PatEnt). This Requires adDitIoNal process stEPs, Thus increaSinG complexity aNd pOtentiAl For YIeld lOss. seconD, althoUGh suffIcient heaT mAY be genERated, trANSfErriNg the heat to the antIFuSE is inefficient BecausE oF ThE INdiRecT nature of tHe HeatiNG that ocCUrS. fOR exAMple, as illustrAted in FIG. 6B oF The '530 Patent, To RaiSE the teMperaTuRE of Antifuse dieLectRic layer 330, hEat eneRGy must rADiate frOm heatIng EleMent 305 THrOuGh tHiCK diELeCtrIC laYer 340, which Is AbOut 0.5 miCronS THICk. ThIs hEat tRansfEr path is ineffIciEnt aND reQuireS a higH proGrAmminG curreNt to tRaVel through heatiNg elEment 305 to prOduCe SufFiCient INdirecT heAtiNg of dieLectric LAyeR 330. ADDITiOnally, the heat energY wILL dIsperse rAdiallY FrOm HEating elEmEnt 305, Thus FURther ReduCInG the amouNt of heAT eNeRgy that WiLl reacH tHe dIelEctriC LayeR 330. Also, sOme amounT of deLAy will occur froM A point in time wHEn THE eXTernAl hEating elemeNt is ACtivAted TO wHen THe heaT enerGy REaCHes the antifuse elemeNt. this deLay is A function of boTh the distaNCE Between tHe exTErNAl heating elemeNt and The antifusE Element aNd the Heat tranSfer charaCTEristics (E.g. tHerMal ConDUCtIvity) of the dieLECtriC mAterial ThaT separaTes The ExtErnAl Heating elEment and ThE aNtIfUse ElemeNT. The dielEcTriC mAteRial tHAt sepaRates The eXtErNAl hEating eLEmENT and ThE aNtifUse ElEment Is tyPIcaLly a pooR thermal cOndUCtor. heAt Loss wilL occur as the heAt Energy passEs ThrOugh thE INsulator. therefore, the size of the exTErnal heAtiNg eleMent Will have tO be IncreaSed TO accouNt for sUch heAt LosS. fInallY, THe OveRaLl size of thE PRogRammaBlE cirCuit is iNcreased by adding a sEParAte heating eleMenT, thuS NEgAtiVElY ImpAcTIng THE size of the integRated circuIt ON wHich such anTIfuSe StructuRes resiDe.
TheREfore, a nEed exists For an inteGrAted, SELf-hEating, less Complex, rEduced sizE, And moRE eFficiEnt AntifuSe StrUcturE where THe aNtifuSe dielEcTric laYer is HeAted direCtly by the antifuse structUre itsElf, noT by An externaL heATinG element. REducIng power coNsuMptIon in An iNTegraTed cIRcUit IS ofteN desIRable. HoweVEr DesIGNeRs of integraTED CirCuits OftEN selecT a coNservative supply vOLtage to ensure cOrreCT OpeRatIOn of ThE integrated cirCuiTs UNDer all poSsIble variatiOns. This cOnSErvatIve appRoach oFten meaNS ThAT there Is a sUbsTantial maRgiN tHAt is addEd To THe critIcal VoLtage tO accouNT for UNCertainty in the ciRcuit MODels aND to AddreSs PotentiAL worSt-case combInation of vaRiabilItieS. HoweVer such CoMbinatIon Of VariabilitIEs might be Very rAre
 in proximity to the antif use. A res istiv e h eat in g el emen t (depicted as elem ent 305 in FIG. 6B ofthe ' 53 0  pat e nt ) mus t be pl a ce d inth epro xi m it y ofthe  antifu se (depict edas  element 300 in  FIG. 6B o f t he '530 pate nt) . This  r equ i res a ddi tiona l proc e ss ste ps, thusin c reasin g  comple x i ty  and  potential for yi e ld loss. Second,althou gh su f f ici ent  heat maybe  gene r ated, t r an s f e rri n g the heat to  the antifu s e i s inef fi cie n t beca use o ft heindirect na ture  of the h eating that oc c urs. Fo r exam ple , a s il l us tr ate di n F I G.  6B ofthe '530  p at ent,to r a i s e  the  te mper ature  of antifusedie lect r iclayer  330,  hea tenerg y must  radi at e from heatingelem ent 305 t hro ug h t hi ck di e lectri c l aye r 340,which i s  ab ou t 0 .5  microns thick. Th is h ea t transf er pat h  i si nefficie nt  an d re q u iresa hi g hprogramm ing cu r re nt  to tra ve l thro ug h h eat ing e l emen t 305to produ ce su f ficient indire c t heating ofd ie l e ct r ic l aye r 330. Addi tion a lly,  the he ate nergy  will  d i sp e rse radially from h ea ting e lemen t 305, thus f urther red u c i ng the a moun t  o f  heat energy t hat w ill reacht he diele ctric  layer 3 30. Also, s ome amou ntofdel ayw i ll  occur from a p oint  i n timewhe n the e xte rna l h eat in g element  is acti va te dto  wh en th e  heat en er gyre ach es th e  antif use e leme nt .T his  delayi sa func ti on  ofbot hthe d ista n cebetween  the exte rna l  hea ti ng  elemen t and the ant if use elemen tand  the h e a t transf er characteristics (e.g .  therma l c onduc tivi ty) of th e d ielect ric materi al tha t sep ar ate s the e x t er nal  h eating ele m e ntand t he  ant ifuse e lement. The dielec t ric  material tha t s epar a t es  th e  e x ter na l  he a t ing element and  the antif us e  e lement ist ypi ca lly a p oor the rmalc onducto r. Heat l oss willoc cura s  th e heat ene rgy pass es throug h  thei ns ulato r.Theref or e,the s ize of the  exte rnal h ea ting e lemen twill hav e to be increased to ac countfor s uch  heat los s.F ina lly, theover all size o f t heprogr amm a ble c ircu i tisi ncrea sedb y addinga  s epa r a te  heating el e m e nt,  thus  ne g ativel y im pacting the sizeo f the integrat ed c i r cui t o n  whi ch  such antifuse  st ru c t ures res id e.
Therefor e, a nee de xists  for a n inte grated, s el f -heati ng,les s complex , r ed u ced siz e,  a n d more  eff ic ient a ntifus e  str u c ture where the a ntifu s e  diel e ctr ic la ye r is he a teddirectly b y the antif use st ruct ure i tself,no t by a n e xt ernal heat i ng elemen t. Re ducingpo wercon sumpti on i n an in tegr at edcircuit i s of t en  d e sir able . How ev er d esignerso f integr ate d  circui ts  of t e n sele c ta conservati vesuppl y voltage to ensu r ec orrec t oper ationof thei nte gr ated ci rcu i t s under a ll possib l e v ar iati ons. Thi scons er vat iv e approach ofte n meansthat the r e  is asub s tant i al mar gi n that is ad ded t ot he crit i c alvoltage toacc oun t fo r u ncer t ainty in the circuit mod elsand t o  ad dress  pote nt ial wors t -cas e combin a tion of varia bilities. Howev e r s u ch c omb i na ti on of var iab i litie s mi ght  bever y ra r e 
 in_proximity to_the antifuse. A resistive_heating element_(depicted_as element_305_in FIG. 6B_of the '530_patent) must be placed_in the proximity_of_the antifuse (depicted as element 300 in FIG. 6B of the '530 patent). This_requires_additional process_steps,_thus_increasing complexity and potential for_yield loss. Second, although sufficient_heat may_be generated, transferring the heat to the antifuse_is_inefficient because of_the indirect nature of the heating that occurs. For_example, as illustrated in FIG. 6B_of the '530_patent,_to_raise the temperature of_antifuse dielectric layer 330, heat energy_must radiate from heating element 305_through thick dielectric layer 340, which is_about 0.5 microns thick. This heat_transfer path is inefficient and_requires a_high programming current to travel_through heating element_305 to_produce sufficient indirect_heating of dielectric layer 330. Additionally,_the heat energy_will disperse radially from heating element_305,_thus further reducing_the_amount_of heat_energy that will_reach_the dielectric_layer_330. Also, some amount of delay_will_occur from a point in time when_the external heating element_is_activated to when the_heat energy reaches the antifuse_element. This delay is a function_of both_the distance_between the external heating element and the antifuse element and the_heat transfer characteristics (e.g. thermal conductivity)_of the dielectric material_that separates_the_external heating element_and_the antifuse_element. The dielectric material that separates the_external heating_element and the antifuse element is_typically a poor thermal_conductor._Heat loss will occur as the_heat energy passes through the insulator._Therefore, the size of the_external_heating_element will have to be_increased to account for such heat_loss. Finally, the_overall size of the programmable circuit is_increased_by adding a separate heating element,_thus_negatively impacting the size of the_integrated_circuit_on which such antifuse structures_reside.
Therefore, a need exists for an_integrated, self-heating, less complex, reduced size, and more efficient_antifuse structure where_the antifuse dielectric layer is_heated_directly_by the antifuse structure itself, not by an external heating_element. Reducing_power consumption in_an integrated circuit is often desirable. However designers of integrated_circuits often select a conservative supply voltage_to ensure correct operation of the integrated circuits under all possible_variations. This conservative approach often means that there_is a substantial margin that is added_to the critical voltage_to_account for uncertainty in the circuit models_and_to_address_potential worst-case combination_of variabilities. However_such combination of_variabilities might_be very rare