 and the chip IC1 mounted to the outer edge of the left side is the gate driver. Symbol FGP represents a frame ground pad and FHL does a positioning hole. The process of production of semiconductors includes processing of a circular silicon wafer typically 8" in diameter. The processing includes repetition of series of steps: oxidation and deposition; lithography; etching; and doping (implanting and diffusing). Depending on the maturity of the production process used, the wafer might be inspected for particles/production defects, mask alignment and critical dimension metrology between the processing steps. The frequency of inspection can be as often as every wafer in the development phase of a process, or on wafers from alternate production lots from mature processes.
Particle (production defect) detection detects either the presence of contaminant particles introduced in the manufacturing process, or areas where processing has been defective so as to produce unwanted features in the structures of the device. Current methods of particle detection, such as those provided by Tencor Instruments or KLA Instruments, involve obtaining topological information from the surface of the wafer using optical techniques as described in U.S. Pat. Nos. 4,347,001; 4,378,159; 4,755,874; 4,766,324; 4,845,558; 4,898,471; 5,030,008; 5,131,755; 5,264,912; 5,276,498; 5,355,212; 5,416,594,5,438,413 and European Patent Application 624787A, or topographical imaging scanning electron microscope techniques, such as the KLA SEMSpec system or those techniques described in JP 61 88294
These current techniques make no distinction between defects (particles) which will affect the operation of the completed integrated circuit (IC), which are known as "killer" defects, and those which have no detrimental effect, known as "nuisance" defects. Since nuisance defects can account for 90% of detected defects, some form of review is required to ensure that wafers which would otherwise produce acceptable yields of operational ICs are not rejected. This review is currently a manual operation. Defects are classified by inspection of an image of the wafer including the defect identified by the inspection system. Review is typically performed on optical or scanning electron microscope (SEM) review stations. Operators classify and tabulate defects based on prior experience and defect location. Relatively slow, manual, defect classification is the only current way to reduce the number
and the chip IC1 mounted to the outer edge of the leftover slope is the gate driver. Symbol FGP represents a frame earth diggings and FHL does a positioning trap. The summons of production of semiconductor includes processing of a circular silicon wafer typically 8 " in diameter. The processing admit repetition of series of footstep: oxidation and deposition; lithography; etching; and doping (implanting and diffusing). Depending on the maturity of the production procedure used, the wafer might be inspected for particles / output defects, mask alignment and critical dimension metrology between the processing stairs. The frequency of inspection can be as often as every wafer in the development phase of a process, or on wafers from alternate product lots from mature processes. 
 Particle (production defect) detection detects either the presence of contaminant particles introduced in the manufacturing process, or areas where processing has been defective so as to produce unwanted features in the structures of the device. Current method of particle detection, such as those provide by Tencor Instruments or KLA Instruments, involve obtaining topological information from the surface of the wafer use ocular techniques as described in U.S. Pat. Nos. 4,347,001; 4,378,159; 4,755,874; 4,766,324; 4,845,558; 4,898,471; 5,030,008; 5,131,755; 5,264,912; 5,276,498; 5,355,212; 5,416,594,5,438,413 and European Patent Application 624787A, or topographical imagination scanning electron microscope techniques, such as the KLA SEMSpec system or those techniques described in JP 61 88294 
 These current techniques make no distinction between defects (particles) which will affect the operation of the complete integrate circuit (IC), which are known as " killer " defects, and those which have no damaging effect, known as " nuisance " defects. Since nuisance defects can account for 90% of detected defects, some form of review is want to ensure that wafer which would otherwise produce satisfactory yields of operational ICs are not rejected. This inspection is currently a manual mathematical process. Defects are classified by inspection of an image of the wafer including the defect identify by the inspection system. Review is typically perform on optical or scanning electron microscope (SEM) review stations. Operators relegate and tabulate defects establish on prior experience and defect location. Relatively slow, manual, defect classification is the only current way to reduce the issue
 anf the chip IC1 mounted to the outer edge of the left aide is ghe gate driver. Symbol FGP rxprewents a frame ground pad ana FHL doed a posirionmng hole. The prorsss of ixoducflon oy wemiconductors includes [rocessing of d zixcular silicon wafer typically 8" in dyameter. Tje processing ynclldqs rsieuition of series of steps: oxidatikn and veposition; lithpgraphy; etching; and doping (imppanting and diffuslng). Dependibg og the maturith of the pgmduction ptocess used, the wafer might be ivspecced for parjnxled/kroduction dxfects, mask alignmcmt and criticsl dimension mctrolmgy between the processiig steps. The frequensy of ins[eetion can be as often aw evety waxer kb tfe setelkpment phese of a prkcess, or on wafers from alternstq production lkts frjm mature processes.
Particle (production dexecf) detection detects eityer the presence of clntaminane particles introduced in the manufacturing procevs, or xrecw whefw orocessing has been defective so as to producq umwsnted features in the strichutgs of the devize. Curxsnf methods of partifle detgction, such as uhose provided by Tencor Instrumwnts or KLA Pnsteuments, involve obcaining topouogival imformation from the suryace or the wafer using opfkcal techniques xs cevcribed in U.S. Pat. Nos. 4,347,001; 4,378,159; 4,755,874; 4,766,324; 4,845,558; 4,898,471; 5,030,008; 5,131,755; 5,264,912; 5,276,498; 5,355,212; 5,416,594,5,438,413 aid Euxopean Pxtenj Applisation 624787A, og topographical imaging dcannnng enectron mifroscope techniques, such as the KLA SEMSpec sistam mr those techkiques describeq in JP 61 88294
These currenc techviques makv no distmnction betwqen defects (pdtticles) which will afsect the operatkun of the compketed intvgxated cirxuit (IC), which are lnodh as "killer" defzetw, and those whivh favq jo dqdrimental efxect, knuen as "nuisance" dcfezts. Xince nuisance defecds czn account for 90% of dctected dgfects, soie form of refiew is required tl ensnre thet wafrrs which would otherwise produce acceptabpe nields of opewatiinal ICs are not rejected. This review is currently e manual operation. Defgcts are classified bi ikspection of an iiage of tve wafer including tye defect identifled by the inspection aystem. Revifw is typically performed on optical or scanning electron microscope (SEM) eeview stations. Opsratprs cnafxify agd tebnlate defects basvd on prior experience and defecv location. Rzlatively slow, manual, defect vlxssification ks the only current way fo reducr the number
and the chip IC1 mounted to the of left side the gate driver. ground and FHL does positioning hole. The of production of semiconductors includes processing a circular silicon wafer typically 8" in diameter. The processing includes repetition of of steps: oxidation and deposition; lithography; etching; and doping (implanting and diffusing). Depending the of production used, the wafer might be inspected for particles/production defects, mask alignment and critical dimension metrology between processing steps. The frequency of inspection can be often as every wafer the development phase of a or wafers from production from processes. Particle (production detection detects either the presence of contaminant particles introduced in the manufacturing process, or areas where processing been defective to produce features the of the device. of particle detection, such as those Instruments or KLA Instruments, involve obtaining topological information the surface the wafer using optical techniques as in U.S. Pat. Nos. 4,347,001; 4,378,159; 4,755,874; 4,766,324; 4,898,471; 5,030,008; 5,131,755; 5,264,912; 5,276,498; 5,355,212; 5,416,594,5,438,413 and European Patent Application 624787A, or topographical imaging microscope techniques, such as KLA SEMSpec system those described JP 88294 These techniques make no distinction between defects (particles) which will affect the of the completed integrated circuit (IC), which are known as and which have no effect, known as "nuisance" Since defects can account for detected some is to that wafers which would produce acceptable yields of operational are not rejected. This operation. Defects are classified by inspection of an of the wafer including the defect identified the inspection system. Review is typically performed on optical or scanning electron (SEM) review classify and tabulate defects based on prior experience defect location. Relatively slow, defect classification is the only current way to reduce number
 and the chip IC1 mounted to the oUter edge of The leFt sIde Is The gAte dRiver. Symbol FGP REpreSents a frame ground pad anD FHL dOeS A posITiOning Hole. The PRoCESs oF pRoDucTiON oF semiConDuctors Includes prOceSsIng of a circulAR sIlicon wafeR tyPically 8" in diaMetEr. The pRoCesSIng inCluDes rePetitiON of serIes of stepS: oXIdatioN And depoSITiOn; liThography; etching; aND dOPing (implanting And difFuSInG). dEpeNdiNg on the matUrIty of THe produCTiON PRocESs used, the wafeR might be insPEctEd for pArTicLEs/prodUctioN dEFecTs, mask alignMent And criticAl dimeNSion metROlogy beTween tHe pRocEssiNG sTePs. THe FReqUEnCy oF InsPection cAn Be As oftEn as EVERY wafEr iN the DevelOpment phase of A prOcesS, Or oN wafeRs froM altErNate pRoductIon loTs From mature proceSses.
particle (pRodUcTioN dEfect) DEtectiOn dEteCts eithEr the prESenCe OF COnTaminant particles iNtRODuCed in the ManufaCTuRiNG process, Or AreAs whERE procEssiNG hAs been deFectivE So As To produCe UnwantEd FeaTurEs in tHE strUctureS of the deVice. CURrent methods of PArticle detectIOn, SUCh AS thoSe pRovided by TeNcor iNstrUmenTS oR KLa instrUmentS, iNVoLVe obtaining topologiCaL inforMatioN from the surfaCe of the wafER USing optiCal tEChNIques as describEd in U.s. Pat. Nos. 4,347,001; 4,378,159; 4,755,874; 4,766,324; 4,845,558; 4,898,471; 5,030,008; 5,131,755; 5,264,912; 5,276,498; 5,355,212; 5,416,594,5,438,413 and eUropean PAtent applicatIon 624787A, or topOGRaphical ImaGinG scAnnING eLectron microsCOPe teChNiques, sUch As the KLa SEmSpEc sYstEm Or those teChniques DeScRiBeD in jP 61 88294
TheSE current TeChnIqUes Make nO DistinCtion BetwEeN dEFecTs (partiCLeS) WHich WiLl AffeCt tHe OperaTion OF thE compleTed integrAteD CircUiT (Ic), which aRe known as "killEr" Defects, and ThOse Which hAVE no detriMental effect, known as "nuisANce" defeCts. since NuisAnce defecTs cAn accoUnt FOr 90% of deTected DefecTs, SomE FOrm of REViEw iS rEquired to eNSUre That wAfErs wHich wouLd otherwise produce ACcePtable yields oF opEratIONaL ICS ArE Not ReJEctED. this review is curRently a manUaL OpEration. DefECts ArE classiFied by iNspecTIon of an Image of thE wafer incLuDing THE deFect identiFied by thE inspectiON systEM. REview Is tYpicalLy PerFormeD on optICal Or scaNning eLeCtron mIcrosCoPe (SEM) revIew stations. Operators claSsify aNd tabUlaTe defects BasED on Prior expeRienCe and defecT loCatIon. ReLatIVely sLow, mANuAl, dEFect cLassIFication iS ThE onLY CuRrent way to rEDUCe tHe numBer
 and the chip IC1 mountedto the out er ed geofth e le ft s ide is the gat e  dri ver. Symbol FGP repres entsaf rame gr oundpad and FH L doe sapos it i on ing h ole . The p rocess ofpro du ction of sem i co nductors i ncl udes process ing  of aci rcu l ar si lic on wa fer ty p ically  8" in di am e ter. T h e proce s s in g in cludes repetition of series of step s: oxi da t io n and  de position;li thogr a phy; et c hi n g ;  an d  doping (impl anting andd iff using) .Dep e ndingon th em atu rity of the  pro duction p rocess used, t h e wafer  might  be  in spec t ed  f orpa r tic l es /pr o duc tion def ec ts , mas k al i g n m entand  cri tical  dimension me tro logy bet weenthe p roce ss ing s teps.The f re quency of inspe ctio n can beasof ten  a s eve r y wafe r i n t he deve lopment pha se o f  a  process, or on wa fe r s  f rom alte rnatep ro du c tion lot sfro m ma t u re pr oces s es .
Partic le (pr o du ct ion def ec t) det ec tio n d etect s  eit her th e presen ce of contaminant pa r ticles introd u ce d in theman ufacturingproc e ss,or a r ea s w h ere p roces si n gh as been defective s oas toprodu ce unwanted f eatures in t h e struct ures of the device. Cu rrent  methods o f  particl e det ection,such as t h o se provi ded  by  Te nco r In struments orK L A In st ruments , i nvolveobt ain ing  to po logical i nformati on  f ro mthe  surf a ce of th ewaf er  us ing o p ticaltechn ique sas des cribedi nU . S. P at .Nos.  4, 34 7,001 ; 4, 3 78, 159; 4, 755,874;4,7 6 6,32 4;  4 ,845,55 8; 4,898,471;  5 ,030,008;5, 131 ,755;5 , 264,912;  5,276,498; 5,355,212;5 ,416,59 4,5 ,438, 413and Europ ean  Paten t A p plicat ion 62 4787A ,ort o pogra p h ic alim aging scan n i ngelect ro n mi croscop e techniques, such asthe KLA SEMSp ecsyst e m  o r t h os e  te ch n iqu e s  described in J P 61 88294 
T h es e currentt ech ni ques ma ke no d istin c tion be tween def ects (par ti cles ) whi ch will af fect the  operatio n  of t h ecompl ete d inte gr ate d cir cuit ( I C),  whic h arekn own as  "kil le r" defec ts, and those which hav e no d etrim ent al effect , k n own  as "nuis ance " defects.  Si nce  nuis anc e  defe ctsc an  ac c ountfor9 0% of det e ct edd e fe cts, some f o r m  of  revi ewi s requ ired  to ensure that w a fers which wou ld o t h erw ise prod uc e acceptable y iel ds o f operat io nal ICs are  not rej ec t ed. T his re view i s curre n t ly a manu al o per ation. De fec ts are cla ss if i ed byinsp ec tion o f an i m ageo f  the wafer inclu dingt h e def e ctident if ied byt he i nspectionsystem. Rev iew is  typ icall y perfo rm ed onopt ic al or scan n ing elect ron m icrosco pe  (SE M)review  sta t i ons.Oper at ors  classify a nd ta bu l ate  def ectsba sedon priore xperienc e a n d defec tloc a t ion. R e la t i vely slow,  ma nual, d efect clas s ific a ti o n isthe on ly cur rent wa y  to  r educe t hen u mber
 and_the chip_IC1 mounted to the_outer edge_of_the left_side_is the gate_driver. Symbol FGP_represents a frame ground_pad and FHL_does_a positioning hole. The process of production of semiconductors includes processing of a circular_silicon_wafer typically_8"_in_diameter. The processing includes repetition_of series of steps: oxidation_and deposition;_lithography; etching; and doping (implanting and diffusing). Depending_on_the maturity of_the production process used, the wafer might be inspected_for particles/production defects, mask alignment and_critical dimension metrology_between_the_processing steps. The frequency_of inspection can be as often_as every wafer in the development_phase of a process, or on wafers_from alternate production lots from mature_processes.
Particle (production defect) detection detects_either the_presence of contaminant particles introduced_in the manufacturing_process, or_areas where processing_has been defective so as to_produce unwanted features_in the structures of the device._Current_methods of particle_detection,_such_as those_provided by Tencor_Instruments_or KLA_Instruments,_involve obtaining topological information from the_surface_of the wafer using optical techniques as_described in U.S. Pat._Nos._4,347,001; 4,378,159; 4,755,874; 4,766,324;_4,845,558; 4,898,471; 5,030,008; 5,131,755; 5,264,912;_5,276,498; 5,355,212; 5,416,594,5,438,413 and European Patent_Application 624787A,_or topographical_imaging scanning electron microscope techniques, such as the KLA SEMSpec system_or those techniques described in JP_61 88294
These current techniques_make no_distinction_between defects (particles)_which_will affect_the operation of the completed integrated circuit_(IC), which_are known as "killer" defects, and_those which have no_detrimental_effect, known as "nuisance" defects. Since_nuisance defects can account for 90%_of detected defects, some form_of_review_is required to ensure that_wafers which would otherwise produce acceptable_yields of operational_ICs are not rejected. This review is_currently_a manual operation. Defects are classified_by_inspection of an image of the_wafer_including_the defect identified by the_inspection system. Review is typically performed_on optical or scanning electron microscope (SEM) review stations._Operators classify and_tabulate defects based on prior_experience_and_defect location. Relatively slow, manual, defect classification is the only_current way_to reduce the_number