 treatment for the manufacture of semiconductor devices. More particularly, the present invention relates to an apparatus for wafer treatment for improving the process uniformity of a specific semiconductor device fabrication process, such as an etching or a cleaning, by minimizing the temperature changes of the treatment solution supplied on the wafer mounted on a spin chuck.
Generally, the process of manufacturing semiconductor devices involves a wide variety of steps including a layer formation process for forming multiple layers such as a polycrystalline layer, an oxide layer, a nitride layer, a metal layer, etc. on a wafer as a semiconductor substrate. These steps generally also include a diffusion process, a photolithography process, an etching process, a cleaning process, an ion implantation process, and the like, which are carried out between the steps of layer formation.
Among the process steps for manufacturing semiconductor devices, a wafer treatment process such as etching and cleaning processes, etc. may employ an apparatus for wafer treatment including a spin chuck used to rotate the wafer when it is mounted on the spin chuck.
In the above wafer treatment process using the apparatus for wafer treatment, the wafer is mounted on the spin chuck, and is rotated along with the rotating spin chuck. A specific process is then carried out for the wafer, such as etching some portion of the layers formed on the wafer or removing the particles existing on the wafer by supplying a respective treatment solution corresponding to the specific process. In either case, the process uses the centrifugal force of the rotating spin chuck and the pressure of the pressurized treatment solution when it is supplied to accomplish these goals.
Important process factors in the wafer treatment process include the rotation speed of the spin chuck, the kinds of the treatment solutions used for the wafer, the process temperature of the treatment solution, and the like. For example, the wafer treatment solution should be maintained at a temperature higher than room temperature when it is used in order to facilitate the reaction rate of the treated subject and the treatment solution in the aspect of the mass production of semiconductor devices and the reduction of the treatment time.
However, the actual process environment of the treatment process cannot completely satisfy these conditions. For example, when a treatment solution having a temperature of about 100.degree. C. is supplied on the wafer rotating on the spin chuck, the treatment solution cannot maintain its original temperature of 100.degree. C. due to the temperature difference between the treatment solution and the wafer. In other words, a temperature difference occurs when the treatment solution is initially contacted with the wafer, and as it moves to the peripheral edge
treatment for the manufacture of semiconductor devices. More peculiarly, the present invention relate to an apparatus for wafer treatment for improving the procedure uniformity of a specific semiconductor device device fabrication process, such as an etching or a cleaning, by minimize the temperature changes of the treatment solution supply on the wafer mounted on a spin chow. 
 Generally, the process of manufacturing semiconductor device involves a broad variety of steps include a layer formation process for shape multiple layers such as a polycrystalline layer, an oxide layer, a nitride layer, a metallic element layer, etc. on a wafer as a semiconductor substrate. These steps generally also admit a diffusion process, a photolithography process, an etching process, a cleaning process, an ion implantation procedure, and the like, which are carried out between the steps of layer formation. 
 Among the process steps for manufacturing semiconductor devices, a wafer discussion procedure such as etching and cleaning summons, etc. may hire an apparatus for wafer treatment including a tailspin chuck use to rotate the wafer when it is mounted on the tailspin chuck. 
 In the above wafer treatment process using the apparatus for wafer treatment, the wafer is mounted on the tailspin chuck, and is rotated along with the rotating spin chuck. A specific process is then carried out for the wafer, such as etch some portion of the layers formed on the wafer or removing the particles exist on the wafer by supplying a respective treatment solution corresponding to the specific procedure. In either case, the process uses the centrifugal force of the rotate spin chow and the pressure of the pressurized treatment solution when it is supplied to accomplish these goal. 
 Important procedure factors in the wafer discussion process include the rotation speed of the tailspin chuck, the kinds of the treatment solutions used for the wafer, the process temperature of the treatment solution, and the like. For example, the wafer treatment solution should be maintained at a temperature higher than room temperature when it is use in order to facilitate the chemical reaction rate of the treated subject and the treatment solution in the aspect of the mass production of semiconductor device devices and the reduction of the treatment time. 
 However, the actual process environment of the treatment process cannot completely meet these conditions. For example, when a treatment solution having a temperature of about 100.degree. C. is supplied on the wafer rotating on the spin chow, the treatment solution cannot maintain its original temperature of 100.degree. C. due to the temperature difference between the treatment solution and the wafer. In other words, a temperature difference occurs when the treatment solution is initially contacted with the wafer, and as it move to the peripheral edge
 trfatment for the manufactmre of semicondueror detices. Mkre partkcularly, the present inventiln relauvs to an apparatus fof wafer tgeatment dor mmproving the process unlyormifn of c wpecific semicpnductor davice fabricathov 'rocess, such as an etching or a cleaging, by mlnimizing the jempegaeure bhcnges of the treatment solution supplitd on the wafer mointed on a spin chuck.
Generwlly, the process of majufacturing semyxonductor dexices involves a wide bariety of steps including a laher fprmation ptodedv for formiig mulniple layers such as d polyctystalline laycr, an oxude layer, a nitride leyer, a metal layer, ejc. on a waxex as a semiconductor wuvstraje. Thase rrepr gtnecalmy alsl iiclude a dirfusion proxess, a photolithogrsprj process, an stchind [rocess, a cleaning process, an ion implattafion process, and the lije, which are carried lut betweqn the steps of layer formation.
Among the process vteps wor mwvyfwcturing semiconductor devices, a wafer treatmqht pgocess such as etghing and cleaning pgovgsses, etc. may gmploy ch zpparatus for wafeg treatient uncluding a slin chuck used to rotate thw wafer when ut is mounted on tke spin chucy.
In jhe abpve wafer treatment proeess uaing the apoaratus fkf wafer treatmeng, tme fafer is mounted on the spyn chuck, end ix rotatdd akong wyth the rohatinn spin chuck. A speclfic krocesv is then farried out for the wafer, such ex etching soke pogtion of che laners formed on ehe wafer or rgmoving tke pargicles exiating oi the wafer fy supplying d respective vreatment solytiob correroonding to the specific process. Ib either case, the irocera uses the centxnfotal force of tne fotwtpng s[hn chuck and the prdxsure of the prewruriaed treatment solutimn wgen it is supplied tj accompoish thefe goals.
Imporyant process factogs in thx wafet tteatment process include the rofation spfed of the spin chugk, tre kinds oy the treatment solutions used for the wefer, the process tempetature of the treatmeut solution, aid the like. For example, the wafer teeatment solution should be maintained at a dempegature higher than room temperature when it is used in order to facilitatw the cewction rate of yhe tgeaced subjest aid the treatment splution in the aspect of the mars produwtnon of semiconductor devices sna the reductiun of the treatment time.
Gowever, yhe actual process environment pf the treatment process cannot xomplstely satirfy these conditioms. For example, wheb a breatment solugiom maving a tfmpecatbre of about 100.degree. C. is supplied on thw aafer rotating oi the spin cmugk, the treatient solution cahnot laintxin its origimal temperaturr of 100.degree. C. due to tre temperature sifference bgtween tve treatment solution atd the wafer. In other words, a temperature differencg occurs whtn the trcatment solution od initially contacted eieh the wxfer, and as ht moves to the peripheral edge
treatment for the manufacture of semiconductor devices. the invention relates an apparatus for process of a specific device fabrication process, as an etching or a cleaning, minimizing the temperature changes of the treatment solution supplied on the wafer mounted a spin chuck. Generally, the process of manufacturing semiconductor devices involves a wide of including layer process for forming multiple layers such as a polycrystalline layer, an oxide layer, a nitride layer, metal layer, etc. on a wafer as a substrate. These steps generally include a diffusion process, a process, etching process, cleaning an implantation process, and like, which are carried out between the steps of layer formation. Among the process steps for manufacturing devices, a process such etching cleaning etc. may employ for wafer treatment including a spin rotate the wafer when it is mounted on spin chuck. the above wafer treatment process using apparatus for wafer treatment, the wafer is mounted the spin chuck, and is rotated along with the rotating spin chuck. A specific process carried out for the such as etching portion the formed the wafer removing the particles existing on the wafer by supplying a respective solution corresponding to the specific process. In either case, the the force of the spin chuck and the of pressurized treatment solution when supplied accomplish process in wafer treatment process include rotation speed of the spin the kinds of the wafer, the process temperature of the treatment solution, the like. For example, the wafer treatment should be maintained at a temperature higher than room temperature when it used in facilitate the reaction rate of the treated subject the treatment solution in aspect of the mass production of semiconductor devices and reduction the treatment However, the actual environment of the process cannot completely conditions. For when treatment temperature of about 100.degree. C. is on wafer rotating on the spin the cannot maintain its original temperature of 100.degree. C. due to the temperature difference between the and the wafer. In words, temperature difference occurs when the treatment solution is initially contacted with the as it moves
 treatment for the manufacturE of semiconDuctoR deVicEs. more PartIcularly, the preSEnt iNvention relates to an appAratuS fOR wafER tReatmEnt for iMPrOVIng ThE pRocEsS UnIformIty Of a specIfic semicoNduCtOr device fabrICaTion procesS, suCh as an etchinG or A cleanInG, by MInimiZinG the tEmperaTUre chaNges of the TrEAtment SOlution SUPpLied On the wafer mounted ON a SPin chuck.
GeneraLly, the PrOCeSS Of mAnuFacturing sEmIcondUCtor devICeS INVolVEs a wide varietY of steps incLUdiNg a layEr ForMAtion pRocesS fOR foRming multipLe laYers such aS a polyCRystallINe layer, An oxidE laYer, A nitRIdE lAyeR, a MEtaL LaYer, ETc. oN a wafer aS a SeMiconDuctOR SUBstrAte. thesE stepS generally alsO inCludE A diFfusiOn proCess, A pHotolIthogrAphy pRoCess, an etching prOcesS, a cleaninG prOcEss, An Ion imPLantatIon ProCess, and The like, WHicH aRE CArRied out between the sTePS Of Layer forMation.
aMoNg THe procesS sTepS for MANufacTuriNG sEmiconduCtor deVIcEs, A wafer tReAtment PrOceSs sUch as ETchiNg and cLeaning pRocesSEs, etc. may employ AN apparatus for WAfER TrEAtmeNt iNcluding a spIn chUCk usEd to ROtAte THe wafEr wheN iT Is MOunted on the spin chucK.
IN the abOve waFer treatment pRocess usinG THE apparatUs foR WaFEr treatment, the Wafer Is mounted oN The spin cHuck, aNd is rotaTed along wITH the rotaTinG spIn cHucK. a SpEcific process IS Then CaRried ouT foR the wafEr, sUch As eTchInG some portIon of the LaYeRs FoRmeD on thE Wafer or rEmOviNg The PartiCLes exiSting On thE wAfER by SupplyiNG a RESpecTiVe TreaTmeNt SolutIon cORreSpondinG to the speCifIC proCeSs. in eitheR case, the proceSs Uses the cenTrIfuGal forCE Of the rotAting spin chuck and the preSSure of tHe pRessuRizeD treatmenT soLution WheN It is suPplied To accOmPliSH These GOAlS.
ImPoRtant proceSS FacTors iN tHe waFer treaTment process includE The Rotation speed Of tHe spIN ChUck, THe KIndS oF The TREatment solutionS used for thE wAFeR, the procesS TemPeRature oF the treAtmenT SolutioN, and the liKe. For examPlE, the WAFer Treatment sOlution sHould be maINtainED aT a temPerAture hIgHer Than rOom temPEraTure wHen it iS uSed in oRder tO fAcilitatE the reaction rate of the trEated sUbjecT anD the treatMenT SolUtion in thE aspEct of the maSs pRodUctioN of SEmicoNducTOr DevICes anD the REduction oF ThE trEATmEnt time.
HoweVER, The ActuaL prOCess enViroNment of the treatmeNT process cannot CompLETelY saTIsfy ThEse conditions. FOr eXaMPLe, when a tReAtment solutIon havinG a TEmperAture oF about 100.Degree. C. IS SuPPlied oN the WafEr rotatinG on ThE Spin chuCk, ThE TreatmEnt sOlUtion cAnnot mAIntaIN Its original tempeRaturE OF 100.degrEE. C. dUe to tHe TemperaTUre dIfference bEtween the trEatmenT solUtion And the wAfEr. In otHer WoRds, a temperATure diffeRence Occurs wHeN the TreAtment SoluTIOn is iNitiAlLy cOntacted wITH tHE wAfER, anD as iT moveS tO the PeripheraL Edge
 treatment for the manufac ture of se micon duc tor  d evic es.More particula r ly,the present inventionrelat es to a n  a ppara tus for wa f e r t re at men tf or  impr ovi ng theprocess un ifo rm ity of a spe c if ic semicon duc tor device f abr icatio npro c ess,suc h asan etc h ing or  a cleani ng ,  by mi n imizing t he  tem perature changeso ft he treatment s olutio ns up p l ied  on  the wafer  m ounte d  on a s p in c h uck . 
Generally, t he processo f m anufac tu rin g  semic onduc to r  de vices invol vesa wide va rietyo f steps includi ng a l aye r f orma t io npro ce s s f o rfor m ing  multipl ela yerssuch a s a po lyc ryst allin e layer, an o xid e la y er,  a ni tride  lay er , a m etal l ayer,  e tc. on a waferas a  semicond uct or  su bs trate .  These  st eps  genera lly als o  in cl u d e  a  diffusion process ,a ph otolitho graphy pr oc e ss, an e tc hin g pr o c ess,a cl e an ing proc ess, a n  i on  implan ta tion p ro ces s,and t h e li ke, wh ich arecarri e d out betweent he steps of l a ye r fo r mati on. 
Among theproc e ss s teps fo r m a nufac turin gs em i conductor devices,awafertreat ment processsuch as et c h i ng and c lean i ng processes, etc . may  employ an apparatu s for  wafer t reatmenti n cludinga s pin  ch uck u se d to rotate t h e  waf er  when i t i s mount edonthe  sp in  chuck.
I n the ab ov ewa fe r t reatm e nt proce ss  us in g t he ap p aratus  forwafe rtr e atm ent, th e  w a f er i smo unte d o nthe s pinc huc k, andis rotate d a l ongwi th  the ro tating spin c hu ck. A spec if icproces s is thencarried out for the waf e r, such  as  etch ingsome port ion  of th e l a yers f ormedon th ewaf e r  or r e m ov ing  t he particl e s  ex istin gon t he wafe r by supplying a r e spe ctive treatme ntsolu t i on  co r re s pon di n g t o the specific pr ocess. Inei t he r case, th e  pr oc ess use s the c entri f ugal fo rce of th e rotatin gspin c huc k and thepressure  of the p r essur i ze d tre atm ent so lu tio n whe n it i s  su pplie d to a cc omplis h the se  goals.Important process facto rs inthe w afe r treatme ntp roc ess inclu de t he rotatio n s pee d ofthe spinchuc k ,the kinds  oft he treatm e nt  so l u ti ons used fo r t hewafer , t h e proc esstemperature of th e  treatment sol utio n ,  an d t h e li ke . For example,  th ew a fer trea tm ent solutio n should  b e  main tained  at atempera t u re higher  tha n r oom tempe rat ur e  when i tis used i n or de r to f acilit a te t h e  reaction rate o f the t reate d  su bject  a nd thet reat ment solut ion in theaspect  ofthe m ass pro du ctionofse miconducto r  devicesand t he redu ct ionofthe tr eatm e n t tim e.
H ow eve r, the ac t u al pr oc e ssenvi ronme nt  ofthe treat m ent proc ess cannotco mpl e t ely sa t is f y  these con dit ions. F or example ,  whe n  a treat ment s olutio n havin g  ate mperatu reo f  about 10 0.degree. C.is  sup plied on  t he w af erro tating on the s pin chuc k, the t r e atment  so l utio n  canno tmaintain its  orig in a l tempe r a tur e of 10 0 .de gre e.C. d ueto t h e temperature difference  bet weent hetreat mentso lution a n d th e wafer. In other word s, a temperatur e  di f fere nce oc cu rs when t het reatm entsol utio n i s in i t iall y  con t ac tedwith t he w af er , and asit  movest o th e  pe riph eraled ge 
 treatment_for the_manufacture of semiconductor devices._More particularly,_the_present invention_relates_to an apparatus_for wafer treatment_for improving the process_uniformity of a_specific_semiconductor device fabrication process, such as an etching or a cleaning, by minimizing the_temperature_changes of_the_treatment_solution supplied on the wafer_mounted on a spin chuck.
Generally,_the process_of manufacturing semiconductor devices involves a wide variety_of_steps including a_layer formation process for forming multiple layers such as_a polycrystalline layer, an oxide layer,_a nitride layer,_a_metal_layer, etc. on a_wafer as a semiconductor substrate. These_steps generally also include a diffusion_process, a photolithography process, an etching process,_a cleaning process, an ion implantation_process, and the like, which_are carried_out between the steps of_layer formation.
Among the_process steps_for manufacturing semiconductor_devices, a wafer treatment process such_as etching and_cleaning processes, etc. may employ an_apparatus_for wafer treatment_including_a_spin chuck_used to rotate_the_wafer when_it_is mounted on the spin chuck.
In_the_above wafer treatment process using the apparatus_for wafer treatment, the_wafer_is mounted on the_spin chuck, and is rotated_along with the rotating spin chuck._A specific_process is_then carried out for the wafer, such as etching some portion_of the layers formed on the_wafer or removing the_particles existing_on_the wafer by_supplying_a respective_treatment solution corresponding to the specific process._In either_case, the process uses the centrifugal_force of the rotating_spin_chuck and the pressure of the_pressurized treatment solution when it is_supplied to accomplish these goals.
Important_process_factors_in the wafer treatment process_include the rotation speed of the_spin chuck, the_kinds of the treatment solutions used for_the_wafer, the process temperature of the_treatment_solution, and the like. For example,_the_wafer_treatment solution should be maintained_at a temperature higher than room_temperature when it is used in order to facilitate_the reaction rate_of the treated subject and_the_treatment_solution in the aspect of the mass production of semiconductor_devices and_the reduction of_the treatment time.
However, the actual process environment of the treatment_process cannot completely satisfy these conditions. For_example, when a treatment solution having a temperature of about 100.degree._C. is supplied on the wafer rotating on_the spin chuck, the treatment solution cannot_maintain its original temperature_of_100.degree. C. due to the temperature difference_between_the_treatment_solution and the_wafer. In other_words, a temperature_difference occurs_when the treatment_solution is_initially contacted with_the_wafer, and as it moves to the peripheral edge