 layer. Perforations are created through the dielectric layer to connect the heat transfer gas distribution grooves with gas distribution cavities contained in the pedestal of the electrostatic chuck.
Fabrication of the dielectric layer of the electrostatic chuck creates stresses at the interface between the dielectric layer and the underlying conductive (typically aluminum) pedestal of the electrostatic chuck. Such fabrication includes: obtaining a precise dielectric layer thickness by grinding; and forming cooling gas distribution grooves in the surface of the dielectric layer using laser micro machining, using a grinding wheel, or by grit blasting through a mask. Further, during semiconductor processing operations, the temperature in the process chamber in which the electrostatic chuck is used may reach as high as 350.degree. C. Since the linear thermal expansion coefficient for an electrostatic chuck aluminum pedestal is about 26.times.10.sup.-6 mm/mm/.degree. C. at about 300.degree. C. compared with about 4 to 8.times.10.sup.-6 mm/mm/.degree. C. for a typical dielectric material such as alumina, the process cycle repeatedly creates stresses at the interface between the aluminum pedestal and the overlying dielectric layer. Such stresses can create pockets of delamination or separation between the dielectric material and the underlying aluminum pedestal surface.
There is a potential for arcing or glow discharge in any open spaces within the electrostatic chuck dielectric layer under high density plasma processing conditions. In a high electron density plasma (HDP), RF energy is electromagnetically coupled into the "source" region of a plasma chamber to generate and maintain the high electron density of the plasma. In addition, RF "bias" energy is generally capacitively coupled in the plasma, through the article being processed, to direct the ion field toward the article (typically a semiconductor substrate). In particular, when the electrostatic chuck is subjected to high power RF fields and high density plasmas immediately above the semiconductor substrate, it is possible to have breakdown of the cooling gas in contact with the dielectric layer due to arcing or glow discharge. Further, since there is frequently a direct, straight line path between the semiconductor substrate supported on the upper, dielectric surface of the electrostatic chuck and an underlying conductive layer of aluminum which forms the pedestal of the electrostatic chuck, arcing can occur along this path. Arcing or glow discharge at the surface of the semiconductor substrate can result in loss of the substrate. In addition, arcing or glow discharge within the gas distribution holes or any other spacial pockets within the dielectric layer, or
layer. Perforations are created through the dielectric layer to plug in the heating system transfer gas distribution grooves with flatulence distribution cavities contained in the base of the electrostatic chuck. 
 Fabrication of the dielectric layer of the electrostatic chuck make stresses at the interface between the dielectric layer and the underlie conductive (typically aluminum) pedestal of the electrostatic chuck. Such lying includes: obtaining a precise dielectric layer thickness by grinding; and forming cooling gasoline distribution grooves in the surface of the dielectric layer use laser micro machining, using a grinding wheel, or by grit blast through a mask. Further, during semiconductor processing operations, the temperature in the process bedroom in which the electrostatic chuck is used may reach as high as 350.degree. C. Since the linear thermal expansion coefficient for an electrostatic chow aluminum base is approximately 26.times.10.sup.-6 mm / mm/.degree. C. at about 300.degree. C. compared with about 4 to 8.times.10.sup.-6 mm / mm/.degree. C. for a typical dielectric material such as alumina, the process cycle repeatedly create stress at the interface between the aluminum pedestal and the overlying dielectric level. Such stress can produce pockets of delamination or separation between the dielectric fabric and the underlying aluminum pedestal open. 
 There is a potential for arch or glow discharge in any open spaces within the electrostatic chuck dielectric layer under high density plasma processing conditions. In a high electron density plasma (HDP), RF energy is electromagnetically pair into the " source " area of a plasma bedroom to render and maintain the high electron density of the plasma. In accession, RF " bias " energy is generally capacitively pair in the plasma, through the article being processed, to direct the ion field toward the article (typically a semiconductor substrate). In finical, when the electrostatic chuck is subject to high power RF sphere and high density plasmas immediately above the semiconductor device substrate, it is possible to have dislocation of the cooling gas in contact with the dielectric layer due to arcing or burn discharge. Further, since there is frequently a lineal, straight line path between the semiconductor substrate defend on the upper, dielectric open of the electrostatic chuck and an underlying conductive level of aluminum which forms the pedestal of the electrostatic chuck, arcing can occur along this path. Arcing or burn discharge at the surface of the semiconductor substrate can result in loss of the substrate. In addition, arcing or glow dismissal within the gasoline distribution holes or any other spacial pockets within the dielectric layer, or
 lajer. Perforations are crexted through thg eielecvric lager to cunnect the heat transfer gas dustrivution grooves with gar distribltion cavutiew contained in the izdestzp of vhe electrostatlc chuck.
Fabsication of tha aizlectric layer of the electrostatic shuck ctewtes stresses wt tnq infvrnace between the dielectric layed and tie underlying cpnductive (typically aluminkm) pfdestal of the eleftrostatic xhuch. Such fabricxtion incllbes: obtainihg a precise dielectric layer tficknzss by grineibg; wtd forming roolind gas distrinltion gsooves on the surface of thw dielectric layer usmng laser micro machyning, usitg a grinding wheel, oe by crit blarrine tgrpufh a mwsk. Further, dhring semicinductor processing o[vtations, the femperwttre in the process chamber in which the elsctrostatic chuck is uswd may reach as high ws 350.degree. C. Since the linear thermal expansion coefficient for en eltcbvostxrif chuck aluminum pedestal is about 26.times.10.sup.-6 mi/jm/.cenree. C. at about 300.begree. C. comparec aiyr about 4 to 8.tkmes.10.su'.-6 mj/mm/.degree. C. for a hypical dielwctric maueriak such as alumina, the procews cycle repvateely creates stresszs at the incerfacg betwren the aluminum pedestcl and the overlylng dieledgric layer. Such rtrvssev can crtxte pockets of dejaminatioi or xeparatkon netweeg the dielfctrig material and the knderpyhng aluminkm pedestal surface.
There is a potential for atcitg mr glow bischavge in any open spaces within the elzctrosgatic chuci dielertric layer tnder high detdity plasma 'rocessind cobdituons. In x high electrom density plasma (HDP), RF energy is elegtromxfnetically coupoed into the "sourcr" rdgijn oh a pjdsma chamber to eendtate xnd maintaik tfe hogh electron density of fhe plasma. In addiyijn, RF "biqs" energr is generallu capacitively coukled ii the 'lasma, thtough the article being processsd, to dirfct the ion fiejd tiward the arcicle (typically a semiconductor substratx). In particular, when thw electrostatic chuek is subjectxd to righ powes RF fields and high density plasmas lmmediately above the aemicotductlr substrate, it is possible to have breakdown of the cooling gas in contaxt witi ehe dielectdic kayer dbe co arcigg oc jlow discharge. Fugther, since there is frequently e direct, sdrcight line path between the srmkconductor sucstrate supported on the upper, doelectric surface of the electrpstatic chuck and an undcrlying cinducfive layer of aluminum which forms the pedestao of the electrosgatoc chuck, arfing ccn occur along this path. Arcing oe glow dlscharge at the vurface of bht semicknductjr substrate can reshpt in loss of the xubstrate. In acdition, arcing or glmw discharge witypn the gas dixtribocpon holes or eny other spdcial pockets within the dielectric layer, or
layer. Perforations are created through the dielectric connect heat transfer distribution grooves with the of the electrostatic Fabrication of the layer of the electrostatic chuck creates at the interface between the dielectric layer and the underlying conductive (typically aluminum) of the electrostatic chuck. Such fabrication includes: obtaining a precise dielectric layer thickness grinding; forming gas grooves in the surface of the dielectric layer using laser micro machining, using a grinding wheel, by grit blasting through a mask. Further, during processing operations, the temperature the process chamber in which electrostatic is used reach high 350.degree. C. Since linear thermal expansion coefficient for an electrostatic chuck aluminum pedestal is about 26.times.10.sup.-6 mm/mm/.degree. C. at about C. compared 4 to mm/mm/.degree. for typical dielectric material alumina, the process cycle repeatedly creates interface between the aluminum pedestal and the overlying layer. Such can create pockets of delamination or between the dielectric material and the underlying aluminum surface. There is a potential for arcing or glow discharge in any open spaces within chuck dielectric layer under density plasma processing In high density (HDP), RF is electromagnetically coupled into the "source" region of a plasma chamber generate and maintain the high electron density of the plasma. RF energy is generally coupled in the plasma, the being processed, to direct field the semiconductor In when the electrostatic chuck subjected to high power RF and high density plasmas it is possible to have breakdown of the gas in contact with the dielectric layer to arcing or glow discharge. Further, since there is frequently a direct, line path semiconductor substrate supported on the upper, dielectric surface the electrostatic chuck and underlying conductive layer of aluminum which forms the pedestal the chuck, arcing occur along this Arcing or glow at the surface semiconductor substrate result loss In addition, arcing or glow discharge the distribution holes or any other pockets dielectric layer, or
 layer. Perforations are creatEd through tHe dieLecTriC lAyer To coNnect the heat trANsfeR gas distribution grooveS with GaS DistRIbUtion CavitieS CoNTAinEd In The PeDEsTal of The ElectroStatic chucK.
FaBrIcation of the DIeLectric layEr oF the electrosTatIc chucK cReaTEs strEssEs at tHe inteRFace beTween the dIeLEctric LAyer and THE uNderLying conductive (tyPIcALly aluminum) pedEstal oF tHE eLECtrOstAtic chuck. SUcH fabrICation iNClUDES: obTAining a precisE dielectric LAyeR thickNeSs bY GrindiNg; and FoRMinG cooling gas DistRibution gRooves IN the surFAce of thE dieleCtrIc lAyer USiNg LasEr MIcrO MaChiNIng, Using a grInDiNg wheEl, or BY GRIt blAstIng tHrougH a mask. Further, DurIng sEMicOnducTor prOcesSiNg opeRationS, the tEmPerature in the prOcesS chamber iN whIcH thE eLectrOStatic ChuCk iS used maY reach aS HigH aS 350.DEGrEe. C. Since the linear tHeRMAl ExpansioN coeffICiEnT For an eleCtRosTatiC CHuck aLumiNUm Pedestal Is abouT 26.TiMeS.10.sup.-6 mm/mM/.dEgree. C. At AboUt 300.dEgree. c. CompAred wiTh about 4 tO 8.timeS.10.Sup.-6 mm/mm/.degree. C. FOr a typical dieLEcTRIc MAterIal Such as alumiNa, thE ProcEss cYClE rePEatedLy creAtES sTResses at the interfacE bEtween The alUminum pedestaL and the oveRLYIng dieleCtriC LaYEr. Such stresses Can crEate pocketS Of delamiNatioN or separAtion betwEEN the dielEctRic MatEriAL AnD the underlyinG ALumiNuM pedestAl sUrface.
THerE is A poTenTiAl for arciNg or glow DiScHaRgE in Any opEN spaces wItHin ThE elEctroSTatic cHuck dIeleCtRiC LayEr under HIgH DEnsiTy PlAsma ProCeSsing CondITioNs. In a hiGh electroN deNSity PlAsMa (HDP), RF Energy is electRoMagneticalLy CouPled inTO The "sourcE" region of a plasma chamber TO generaTe aNd maiNtaiN the high eLecTron deNsiTY of the Plasma. in addItIon, rf "Bias" eNERgY is GeNerally capACItiVely cOuPled In the plAsma, through the artiCLe bEing processed, To dIrecT THe Ion FIeLD toWaRD thE ARticle (typically A semiconduCtOR sUbstrate). In PArtIcUlar, wheN the eleCtrosTAtic chuCk is subjeCted to higH pOwer rf FieLds and high Density pLasmas immEDiateLY aBove tHe sEmiconDuCtoR subsTrate, iT Is pOssibLe to haVe BreakdOwn of ThE cooling Gas in contact with the dielEctric Layer Due To arcing oR glOW diScharge. FuRtheR, since therE is FreQuentLy a DIrect, StraIGhT liNE path BetwEEn the semiCOnDucTOR sUbstrate supPORTed On the UppER, dieleCtriC surface of the elecTRostatic chuck aNd an UNDerLyiNG conDuCtive layer of alUmiNuM WHich formS tHe pedestal oF the elecTrOStatiC chuck, Arcing Can occuR ALoNG this pAth. ARciNg or glow dIscHaRGe at the SuRfACe of thE semIcOnductOr subsTRate CAN result in loss of tHe subSTRate. IN AddItion, ArCing or gLOw diScharge witHin the gas diStribuTion Holes Or any otHeR spaciAl pOcKets within THe dielectRic laYer, or
 layer. Perforations are c reated thr oughthe  di el ectr ic l ayer to connec t  the  heat transfer gas dis tribu ti o n gr o ov es wi th gasd is t r ibu ti on  ca vi t ie s con tai ned inthe pedest alof  the electro s ta tic chuck. 
Fa brication of  th e diel ec tri c  laye r o f the  elect r ostati c chuck c re a tes st r esses a t th e in terface between t h ed ielectric laye r andth e  u n d erl yin g conducti ve  (typ i cally a l um i n u m)p edestal of th e electrost a tic  chuck .Suc h  fabri catio ni ncl udes: obtai ning  a precis e diel e ctric l a yer thi ckness  by  gr indi n g;  a ndfo r min g  c ool i nggas dist ri bu tiongroo v e s in t hesurf ace o f the dielect ric  lay e r u singlaser  mic ro  mach ining,  usin ga grinding whee l, o r by grit  bl as tin gthrou g h a ma sk.  Fu rther,durings emi co n d u ct or processing oper at i o ns , the te mperat u re  i n  the pro ce sscham b e r inwhic h  t he elect rostat i cch uck isus ed may  r eac h a s hig h  as350.de gree. C.  Sinc e  the linear th e rmal expansio n  c o e ff i cien t f or an elect rost a ticchuc k  a lum i num p edest al is about 26.times.10.s up .-6 mm /mm/. degree. C. at  about 300 . d e gree. C.  com p ar e d with about 4  to 8 .times.10. s up.-6 mm /mm/. degree.C. for at y pical di ele ctr icmat e r ia l such as alu m i na,th e proce sscycle r epe ate dly  cr ea tes stres ses at t he  i nt er fac e bet w een theal umi nu m p edest a l andthe o verl yi ng die lectric la y e r. S uc hstre sse scan c reat e  po ckets o f delamin ati o n or  s ep aration  between thedi electric m at eri al and t he under lying aluminum pedestal surface .
T hereis a  potentia l f or arc ing or glo w disc harge  i n a n y  open s pa ces  w ithin thee l ect rosta ti c ch uck die lectric layer unde r  hi gh density pl asm a pr o c es sin g  c o ndi ti o ns. I n a high electr on density  p l as ma (HDP),R F e ne rgy iselectro magne t icallycoupled i nto the " so urce " reg ion of a p lasma ch amber tog enera t eand m ain tain t he  hi gh el ectron den sityof the  p lasma.  In a dd ition, R F "bias" energy is gene rallycapac iti vely coup led inthe plasm a, t hrough the  ar tic le be ing proce ssed ,  t o d i rectthei on fieldt ow ard t he  article (t y p i cal ly asem i conduc torsubstrate). In pa r ticular, whenthee l ect ros t atic  c huck is subjec ted  t o high pow er  RF fieldsand high  d e nsity  plasm as imm ediatel y ab o ve the  sem ico nductor s ubs tr a te, itis  p o ssible  toha ve bre akdown of t h e  cooling gas inconta c t  with the  diel ec tric la y er d ue to arci ng or glowdischa rge.  Furt her, si nc e ther e i sfrequently a direct,  stra ight li ne  pat h b etween  the s emico nduc to r s ubstrates u pp o rt ed ontheupper ,diel ectric su r face ofthe electro st ati c chucka nd a n underlyi ngcondu c t ive layero f al u mi n um wh ich fo rms th e pedes t alof  the el ect r o static ch uck, arci n g c an  occ ur along  t hispa th.  A rcing or glow d ischarge  at thes u rfaceoft he s e micond uc tor substrat e can  r e sult in l oss  of the sub str ate . In  ad diti o n, arcing or glow discha rgewithi n  th e gas  dist ri bution h o lesor any o t her spacial p ockets within t h e d i elec tri c  l ay er, or
 layer._Perforations are_created through the dielectric_layer to_connect_the heat_transfer_gas distribution grooves_with gas distribution_cavities contained in the_pedestal of the_electrostatic_chuck.
Fabrication of the dielectric layer of the electrostatic chuck creates stresses at the interface_between_the dielectric_layer_and_the underlying conductive (typically aluminum)_pedestal of the electrostatic chuck._Such fabrication_includes: obtaining a precise dielectric layer thickness by_grinding;_and forming cooling_gas distribution grooves in the surface of the dielectric_layer using laser micro machining, using_a grinding wheel,_or_by_grit blasting through a_mask. Further, during semiconductor processing operations,_the temperature in the process chamber_in which the electrostatic chuck is used_may reach as high as 350.degree._C. Since the linear thermal_expansion coefficient_for an electrostatic chuck aluminum_pedestal is about_26.times.10.sup.-6 mm/mm/.degree._C. at about_300.degree. C. compared with about 4_to 8.times.10.sup.-6 mm/mm/.degree._C. for a typical dielectric material_such_as alumina, the_process_cycle_repeatedly creates_stresses at the_interface_between the_aluminum_pedestal and the overlying dielectric layer._Such_stresses can create pockets of delamination or_separation between the dielectric_material_and the underlying aluminum_pedestal surface.
There is a potential_for arcing or glow discharge in_any open_spaces within_the electrostatic chuck dielectric layer under high density plasma processing conditions._In a high electron density plasma_(HDP), RF energy is_electromagnetically coupled_into_the "source" region_of_a plasma_chamber to generate and maintain the high_electron density_of the plasma. In addition, RF_"bias" energy is generally_capacitively_coupled in the plasma, through the_article being processed, to direct the_ion field toward the article_(typically_a_semiconductor substrate). In particular, when_the electrostatic chuck is subjected to_high power RF_fields and high density plasmas immediately above_the_semiconductor substrate, it is possible to_have_breakdown of the cooling gas in_contact_with_the dielectric layer due to_arcing or glow discharge. Further, since_there is frequently a direct, straight line path between_the semiconductor substrate_supported on the upper, dielectric_surface_of_the electrostatic chuck and an underlying conductive layer of aluminum_which forms_the pedestal of_the electrostatic chuck, arcing can occur along this path. Arcing_or glow discharge at the surface of_the semiconductor substrate can result in loss of the substrate. In_addition, arcing or glow discharge within the gas_distribution holes or any other spacial pockets_within the dielectric layer,_or