 environment with a reduced symmetry has not been investigated,[@neupane2019plane] and its potential for realizing anisotropic modification on the electronic and optical properties of the monolayer TMDCs remains unexploited. In this letter, we report the breaking of the three-fold in-plane symmetry of the MoS$_2$ monolayer by depositing on the low-symmetry surface of sapphire, demonstrating the symmetry associated dielectric engineering of the 2D materials.

Results and Discussions
=======================

![(a)The setup of the RDS measurement and its alignment to the substrate.[]{data-label="figure1"}](Fig1.pdf){width="6cm"}

Due to their attractive properties, sapphire crystals are widely applied in solid-state device fabrications and also among the substrate candidates for 2D semiconductors.[@singh2015al2o3; @dumcenco2015large] Sapphire belongs to negative uniaxial crystals, i.e., its extraordinary dielectric function $\epsilon_e$ smaller than its ordinary dielectric function $\epsilon_o$.[@harman1994optical; @yao1999anisotropic] So far, only c-plane (0001) sapphire substrate has been used to investigate its dielectric screening effects on the monolayer TMDCs.[@yu2015exciton; @park2018direct] With isotropic in-plane dielectric properties defined by $\epsilon_o$, the underlying c-plane (0001) sapphire substrate induces a dielectric modification, which is laterally isotropic to monolayer TMDCs. In contrast, we prepared monolayer MoS$_2$ on a-plane ($11\overline{2}0$) sapphire substrate using chemical vapor deposition (CVD).[@supplemental] By selecting low symmetry a-plane sapphire as the substrate, we supply monolayer MoS$_2$ with an anisotropic dielectric environment defined by $\Delta \epsilon_{ext}=\epsilon_o-\epsilon_e$(see Fig.1). The resultant anisotropic modification was then investigate by measuring the optical anisotropy in the monolayer MoS$_2$ over the ultraviolet-visible (UV-Vis) range using reflectance difference spectroscopy (RDS),[@aspnes1985anisotropies; @weightman2005reflection] which measures the reflectance difference between the light polarized along two orthogonal directions at close normal incidence (see Fig.1). This highly sensitive technology has been successfully applied to investigate the optical properties of ultra-narrow graphene nanoribbons.[@
environment with a reduced symmetry has not been investigated,[@neupane2019plane ] and its potential for realizing anisotropic alteration on the electronic and ocular properties of the monolayer TMDCs remains unexploited. In this letter, we report the breaking of the three - fold in - airplane symmetry of the MoS$_2 $ monolayer by depositing on the low - isotropy airfoil of sapphire, show the symmetry associated dielectric engineering of the 2D material. 

 Results and Discussions 
 = = = = = = = = = = = = = = = = = = = = = = = 

! [ (a)The frame-up of the RDS measurement and its alliance to the substrate.[]{data - label="figure1"}](Fig1.pdf){width="6 cm " } 

 Due to their attractive properties, sapphire crystals are widely apply in solid - state device fabrications and besides among the substrate candidates for 2D semiconductors.[@singh2015al2o3; @dumcenco2015large ] Sapphire belong to negative uniaxial crystal, i.e., its extraordinary dielectric function $ \epsilon_e$ smaller than its ordinary dielectric function $ \epsilon_o$.[@harman1994optical; @yao1999anisotropic ] So far, merely c - plane (0001) sapphire substrate has been used to investigate its dielectric screening effects on the monolayer TMDCs.[@yu2015exciton; @park2018direct ] With isotropic in - plane dielectric properties defined by $ \epsilon_o$, the underlying c - plane (0001) sapphire substrate induces a dielectric modification, which is laterally isotropic to monolayer TMDCs. In contrast, we prepared monolayer MoS$_2 $ on a - airplane ($ 11\overline{2}0 $) azure substrate using chemical vapor deposition (CVD).[@supplemental ] By choose depleted symmetry a - plane sapphire as the substrate, we supply monolayer MoS$_2 $ with an anisotropic dielectric environment defined by $ \Delta \epsilon_{ext}=\epsilon_o-\epsilon_e$(see Fig.1). The resultant anisotropic modification was then investigate by measure the optical anisotropy in the monolayer MoS$_2 $ over the ultraviolet - visible (UV - Vis) range using reflectance dispute spectroscopy (RDS),[@aspnes1985anisotropies; @weightman2005reflection ] which measures the reflectance difference between the light polarize along two orthogonal direction at cheeseparing normal incidence (see Fig.1). This highly sensitive technology has been successfully practice to investigate the optical properties of ultra - narrow-minded graphene nanoribbons.[@
 engironment with a reduced symmetry has not been invesfigated,[@ndupane2019plane] and its potentiap dor rtclizing anisotropic oodificatpon on thw eltctronic and optirzl propcxties lf tke monolayer TMDGs remains gnexploited. In tfid letter, we report the breaking of ehe thrre-vold in-plane simmetgy of fhe MoS$_2$ monolayer by depositing on the lox-symmetry surfave of sapphire, demonstratijg tje symmetry associwted dielecjdic wngineering uf the 2D materials.

Resumts and Discussions
=======================

![(a)The setup ow the RDS measutznenh and its almgnmenn to the subsbgate.[]{datd-label="fogure1"}](Fig1.pdf){widbh="6cm"}

Dne ti their attractive prmperties, sapphire srystals drz widely applied in silud-staje deeice dabficztmona and wlsk among ths substrate candidates for 2D stmisinductors.[@singg2015al2o3; @dtmsenco2015large] Sapphire belongs to negative unjaxial crystals, i.e., its wxtraordinary dielecttic functijn $\epsilon_e$ smaller than its ordinary dielectric xunctmov $\eksljub_o$.[@jarman1994optical; @yao1999anisotropic] So far, only c-plags (0001) sspphire substrcte has been usec ho ynvestigate ijs dielzdtdic screening effefts on jhe mobolayer TIDCs.[@uu2015exciton; @park2018direct] With iwotropic in-pjqne dielectric pro'erties defiued by $\epsikon_o$, the underlying c-plcne (0001) szpphire subdtrate insjces a dielectriz mpdhfication, which is lateraljy isotro'ic tp monolxyer TMDCs. In contradt, we prepared monolayer MoS$_2$ ln a-plane ($11\ovfrline{2}0$) sapphire substrate using chemical vapot dapovition (CRD).[@suppkemental] By sqlecting low simmetry a-'lane rapphire aa the snbstrate, we fupply monolafgr MoS$_2$ with ai anisotrjpic dieoectric dnvironment degined by $\Btlta \epsilin_{ext}=\epsilon_o-\epsilpn_e$(rse Fig.1). The resuotabt anisotropic kodkfisanioi was dhen investicate by keasufing tht oitizal snisotropy in the motolager MoS$_2$ over the uktvaviolet-vusible (UD-Vis) range usong reflectance divfereice spxctrosvopi (RDS),[@aspnes1985anisotropies; @weightmzn2005reflectlon] which measuwes bhe teflectance difference between the light polarized along two orthogobal directions at ckpse normal mncidegce (see Fhg.1). This highly sensirive technology hss been successfully zpplieg to lnvestigate the optical properties of ultra-narrow graphene nanoribbons.[@
environment with a reduced symmetry has not and potential for anisotropic modification on of monolayer TMDCs remains In this letter, report the breaking of the three-fold symmetry of the MoS$_2$ monolayer by depositing on the low-symmetry surface of sapphire, the symmetry associated dielectric engineering of the 2D materials. Results and Discussions ======================= setup the measurement its alignment to the substrate.[]{data-label="figure1"}](Fig1.pdf){width="6cm"} Due to their attractive properties, sapphire crystals are widely applied in device fabrications and also among the substrate candidates 2D semiconductors.[@singh2015al2o3; @dumcenco2015large] Sapphire to negative uniaxial crystals, i.e., extraordinary function $\epsilon_e$ than ordinary function $\epsilon_o$.[@harman1994optical; @yao1999anisotropic] far, only c-plane (0001) sapphire substrate has been used to investigate its dielectric screening effects on the TMDCs.[@yu2015exciton; @park2018direct] in-plane dielectric defined $\epsilon_o$, underlying c-plane (0001) induces a dielectric modification, which is monolayer TMDCs. In contrast, we prepared monolayer MoS$_2$ a-plane ($11\overline{2}0$) substrate using chemical vapor deposition (CVD).[@supplemental] selecting low symmetry a-plane sapphire as the substrate, supply monolayer MoS$_2$ with an anisotropic dielectric environment defined by $\Delta \epsilon_{ext}=\epsilon_o-\epsilon_e$(see Fig.1). The resultant was then investigate by the optical anisotropy the MoS$_2$ the (UV-Vis) range reflectance difference spectroscopy (RDS),[@aspnes1985anisotropies; @weightman2005reflection] which measures the reflectance difference between light polarized along two orthogonal directions at close normal incidence This sensitive technology has successfully applied to investigate optical of ultra-narrow graphene nanoribbons.[@
 environment with a reduced syMmetry has nOt beeN inVesTiGateD,[@neuPane2019plane] and itS PoteNtial for realizing anisoTropiC mODifiCAtIon on The elecTRoNIC anD oPtIcaL pROpErtieS of The monoLayer TMDCs RemAiNs unexploiteD. in This letter, We rEport the breaKinG of the ThRee-FOld in-PlaNe symMetry oF The MoS$_2$ Monolayer By DEpositINg on the LOW-sYmmeTry surface of sapphIRe, DEmonstrating thE symmeTrY AsSOCiaTed Dielectric EnGineeRIng of thE 2d mATERiaLS.

Results and DiScussions
=======================

![(a)THE seTup of tHe rDS MEasureMent aNd ITs aLignment to tHe suBstrate.[]{daTa-labeL="Figure1"}](FIG1.pdf){widTh="6cm"}

DuE to TheIr atTRaCtIve PrOPerTIeS, saPPhiRe crystaLs ArE wideLy apPLIED in sOliD-staTe devIce fabricatioNs aNd alSO amOng thE subsTratE cAndidAtes foR 2D semIcOnductors.[@singh2015aL2o3; @duMcenco2015larGe] SApPhiRe BelonGS to negAtiVe uNiaxial CrystalS, I.e., iTs EXTRaOrdinary dielectric FuNCTiOn $\epsiloN_e$ smalLEr ThAN its ordiNaRy dIeleCTRic fuNctiON $\ePsilon_o$.[@hArman1994oPTiCaL; @yao1999aniSoTropic] so Far, OnlY c-plaNE (0001) sapPhire sUbstrate Has beEN used to investiGAte its dielectRIc SCReENing EffEcts on the moNolaYEr TMdCs.[@yU2015ExCitON; @park2018DirecT] WITh ISotropic in-plane dielEcTric prOpertIes defined by $\ePsilon_o$, the UNDErlying c-PlanE (0001) SaPPhire substrate InducEs a dielectRIc modifiCatioN, which is Laterally ISOtropic tO moNolAyeR TMdcS. IN contrast, we prEPAred MoNolayer moS$_2$ On a-planE ($11\ovErlIne{2}0$) SapPhIre substrAte using ChEmIcAl VapOr depOSition (CVd).[@sUppLeMenTal] By SElectiNg low SymmEtRy A-PlaNe sapphIRe AS The sUbStRate, We sUpPly moNolaYEr MOS$_2$ with aN anisotroPic DIeleCtRiC enviroNment defined bY $\DElta \epsiloN_{eXt}=\ePsilon_O-\EPsilon_e$(sEe Fig.1). The resultant anisotROpic modIfiCatioN was Then invesTigAte by mEasURing thE opticAl aniSoTroPY In the MONoLayEr moS$_2$ over the ULTraVioleT-vIsibLe (UV-Vis) Range using reflectaNCe dIfference specTroScopY (rdS),[@AspNEs1985ANisOtROpiES; @Weightman2005reflecTion] which mEaSUrEs the refleCTanCe DiffereNce betwEen thE Light poLarized alOng two ortHoGonaL DIreCtions at clOse normaL incidencE (See FiG.1). thIs higHly SensitIvE teChnolOgy has BEen SucceSsfullY aPplied To invEsTigate thE optical properties of ultRa-narrOw graPheNe nanoribBonS.[@
 environment with a reduce d symmetry  hasnot  be en  inv esti gated,[@neupan e 2019 plane] and its potenti al fo rr eali z in g ani sotropi c  m o d ifi ca ti onon th e ele ctr onic an d opticalpro pe rties of the mo nolayer TM DCs  remains une xpl oited.  I n t h is le tte r, we  repor t  the b reaking o ft he thr e e-foldi n -p lane  symmetry of theM oS $ _2$ monolayerby dep os i ti n g  on  th e low-symm et ry su r face of sa p p h ire ,  demonstratin g the symme t ryassoci at edd ielect ric e ng i nee ring of the  2Dmaterials .

Res u lts and Discuss ions
= === === ==== = == == === == = =
! [( a)T h e s etup ofth eRDS m easu r e m e nt a nditsalign ment to the s ubs trat e .[] {data -labe l="f ig ure1" }](Fig 1.pdf ){ width="6cm"}

D ue t o their a ttr ac tiv eprope r ties,sap phi re crys tals ar e  wi de l y ap plied in solid-sta te d ev ice fabr icatio n san d  also am on g t he s u b strat e ca n di dates fo r 2D s e mi co nductor s. [@sing h2 015 al2 o3; @ d umce nco201 5large]Sapph i re belongs ton egative uniax i al c ry s tals , i .e., its ex trao r dina ry d i el ect r ic fu nctio n$ \e p silon_e$ smaller th an  its o rdina ry dielectric  function$ \ e psilon_o $.[@ h ar m an1994optical;  @yao 1999anisot r opic] So  far,  only c- plane (00 0 1 ) sapphi resub str ate h as  been used to i nves ti gate it s d ielectr icscr een ing  e ffects on  the mon ol ay er  T MDC s.[@y u 2015exci to n;@p ark 2018d i rect]Withisot ro pi c  in -planed ie l e ctri cpr oper tie sdefin ed b y  $\ epsilon _o$, theund e rlyi ng  c -plane(0001) sapphi re  substrate  i ndu ces ad i electric  modification, which is lateral lyisotr opic  to monol aye r TMDC s.I n cont rast,we pr ep are d monol a y er  Mo S$ _2$ on a-p l a ne($11\ ov erli ne{2}0$ ) sapphire substra t e u sing chemical  va pord e po sit i on (CV D) . [@s u p plemental] By s electing l ow sy mmetry a-p l ane  s apphire  as the  subs t rate, w e supplymonolayer  M oS$_ 2 $  wi th an anis otropicdielectri c  envi r on mentdef ined b y$\D elta\epsil o n_{ ext}= \epsil on _o-\ep silon _e $(see Fi g.1). The resultant ani sotrop ic mo dif ication w ast hen  investig ateby measuri ngthe  opti cal aniso trop y  i n t h e mon olay e r MoS$_2$ ov ert h eultraviolet - v i sib le (U V-V i s) ran ge u sing reflectanced ifference spec tros c o py(RD S ),[@ as pnes1985anisot rop ie s ;  @weight ma n2005reflec tion] wh ic h  meas ures t he ref lectanc e di f ferenc e be twe en the li ght  p o larized  a lo n g twoorth og onal d irecti o ns a t close normal inc idenc e (seeF ig. 1). T hi s highl y  sen sitive tec hnology has  beensucc essfu lly app li ed toinv es tigate the optical p roper ties of  u ltra -na rrow g raph e n e nan orib bo ns. [@
 environment_with a_reduced symmetry has not_been investigated,[@neupane2019plane]_and_its potential_for_realizing anisotropic modification_on the electronic_and optical properties of_the monolayer TMDCs_remains_unexploited. In this letter, we report the breaking of the three-fold in-plane symmetry of_the_MoS$_2$ monolayer_by_depositing_on the low-symmetry surface of_sapphire, demonstrating the symmetry associated_dielectric engineering_of the 2D materials.

Results and Discussions
=======================

![(a)The setup of_the_RDS measurement and_its alignment to the substrate.[]{data-label="figure1"}](Fig1.pdf){width="6cm"}

Due to their attractive properties,_sapphire crystals are widely applied in_solid-state device fabrications_and_also_among the substrate candidates_for 2D semiconductors.[@singh2015al2o3; @dumcenco2015large] Sapphire belongs_to negative uniaxial crystals, i.e., its_extraordinary dielectric function $\epsilon_e$ smaller than its_ordinary dielectric function $\epsilon_o$.[@harman1994optical; @yao1999anisotropic] So_far, only c-plane (0001) sapphire_substrate has_been used to investigate its_dielectric screening effects_on the_monolayer TMDCs.[@yu2015exciton; @park2018direct]_With isotropic in-plane dielectric properties defined_by $\epsilon_o$, the_underlying c-plane (0001) sapphire substrate induces_a_dielectric modification, which_is_laterally_isotropic to_monolayer TMDCs. In_contrast,_we prepared_monolayer_MoS$_2$ on a-plane ($11\overline{2}0$) sapphire substrate_using_chemical vapor deposition (CVD).[@supplemental] By selecting low_symmetry a-plane sapphire as_the_substrate, we supply monolayer_MoS$_2$ with an anisotropic dielectric_environment defined by $\Delta \epsilon_{ext}=\epsilon_o-\epsilon_e$(see Fig.1)._The resultant_anisotropic modification_was then investigate by measuring the optical anisotropy in the monolayer_MoS$_2$ over the ultraviolet-visible (UV-Vis) range_using reflectance difference spectroscopy_(RDS),[@aspnes1985anisotropies; @weightman2005reflection]_which_measures the reflectance_difference_between the_light polarized along two orthogonal directions at_close normal_incidence (see Fig.1). This highly sensitive_technology has been successfully_applied_to investigate the optical properties of_ultra-narrow graphene nanoribbons.[@