absorbing epoxy to suppress quasiparticle generation due to blackbody radiation from higher temperature stages of the cryostat [@Barends11]. The dc and microwave control lines are heavily filtered at 4.2 K and at the cold stage to suppress thermal excitation of the qubit.

We have performed standard microwave pulse sequences to evaluate qubit coherence over a range of bias points; results are shown in Fig. \[fig:figure3\]. Qubit Rabi oscillations decay with a characteristic time in excess of 500 ns. Qubit Ramsey fringes decay on a shorter timescale of order 100 ns; as our qubit has no flux sweet spot Ramsey decay is dominated by excess low frequency magnetic flux noise [@Ithier05; @Bialzak07; @Sank12]. Qubit energy relaxation times up to 1.6 $\mu$s have been measured, and energy relaxation times greater than 1 $\mu$s have been measured on multiple devices. These SOI-based phase qubits thus display energy relaxation times that are a factor of 2-3 better than the $T_1$ times of state-of-the-art phase qubits incorporating low-loss a-Si:H shunt capacitors [@Wang08; @Neeley08]. It is worthwhile to consider the coherence budget of our qubit device. First, dielectric loss in the crystalline silicon shunt capacitor presents an ultimate limit to qubit $T_1$. However, the measured loss tangent of $5\times 10^{-6}$ would correspond in our device to an energy relaxation time around 10 $\mu$s, far in excess of the measured $T_1$. Next, qubit $T_1$ is limited by coupling to the heavily damped readout resonator, a phenomenon known as the Purcell effect [@Houck08]. However for our device and operating parameters the Purcell limit to qubit $T_1$ is around 20 $\mu$s. Instead the current devices appear to be limited by overcoupling to the flux bias coil: experiments reveal an oscillatory dependence of $T_1$ on qubit bias frequency which we have determined to arise from a frequency-dependent impedance transformation of the dissipation looking into the flux line. We anticipate that it will be straightforward to suppress this decoherence channel by re-engineering the bias tee on the flux line and by reducing the mutual inductance from the flux bias coil to the qubit.

![Characterization of SOI phase qubit coherence. (a) R
absorbing epoxy to suppress quasiparticle generation due to black body radiation sickness from higher temperature stages of the cryostat [ @Barends11 ]. The district of columbia and microwave dominance lines are heavily filter at 4.2   K and at the cold stage to suppress thermal excitement of the qubit. 

 We have perform standard microwave pulse sequences to measure qubit coherence over a range of bias points; results are indicate in Fig.   \[fig: figure3\ ]. Qubit Rabi oscillations decay with a characteristic time in excess of 500   ns. Qubit Ramsey periphery decay on a shorter timescale of order 100   ns; as our qubit has no flux density sweet spot Ramsey decay is dominated by excess low frequency charismatic flux randomness [ @Ithier05; @Bialzak07; @Sank12 ]. Qubit energy relaxation times up to 1.6   $ \mu$s have been measured, and department of energy relaxation times greater than 1   $ \mu$s have been measured on multiple devices. These SOI - based phase qubits thus display energy relaxation times that are a factor of 2 - 3 better than the $ T_1 $ times of state - of - the - art phase qubits incorporating abject - loss a - Si: H shunt capacitor [ @Wang08; @Neeley08 ]. It is worthwhile to think the coherence budget of our qubit device. foremost, dielectric loss in the crystalline silicon shunt capacitor presents an ultimate limit to qubit $ T_1$. However, the measured loss tangent of $ 5\times 10^{-6}$ would correspond in our device to an energy relaxation meter around 10   $ \mu$s, far in excess of the measured $ T_1$. Next, qubit $ T_1 $ is limited by coupling to the heavily damp readout resonator, a phenomenon known as the Purcell effect [ @Houck08 ]. However for our device and operating parameters the Purcell limit to qubit $ T_1 $ is about 20   $ \mu$s. alternatively the current devices appear to be limited by overcoupling to the flux bias coil: experiment reveal an oscillatory dependence of $ T_1 $ on qubit bias frequency which we have determine to arise from a frequency - dependent impedance transformation of the dissipation search into the flux line. We anticipate that it will be straightforward to suppress this decoherence groove by re - engineer the bias tee on the flux density line and by reducing the mutual inductance from the flux diagonal coil to the qubit. 

! [ Characterization of SOI phase qubit coherence. (a) R
abslrbing epoxy to suppress quasiparticle ywneratmon due to blacybody radiation from higher vempwratuee stages of the cryosgat [@Barenfs11]. The dx anv microwave contckl lines are gcavilv hiltered at 4.2 K akd at the cmld stage to sgporzss thermal excitation of the qubit.

Wq have legformed standatd mibrjwavs pulse sequences to evaluate qubif cohertnce over a range pf bias points; results are shoan in Fig. \[fig:figure3\]. Qubit Rabi oscyolations decxy with a bkaracteristjc time in excess of 500 ns. Qubit Rxmsey fringes dgeqy lt a shorter timefcale of ordcg 100 ns; as our qunit has no fluw swext spot Ramsey decay is dmminated by excess low freqgeucy magnetic flux noiwe [@Ithigr05; @Bidlzay07; @Savk12]. Suuit energj rxlaxation tjmes up to 1.6 $\nu$s have been measuteq, and energy rslaxatyog times greater than 1 $\mu$s have been measlred on multiple devices. Thwse SOI-based phase quhits thus display energy relaxation times that are a factos of 2-3 cetuev gyaj the $T_1$ times of state-of-the-art phase qubits igdotpprating low-losf a-Si:H shuny falwcitors [@Wang08; @Veeley08]. It is worthwhile to fonsidet the xoherence budbet of our qubit device. Firwt, dielectrib lows in the crystallnne silicon rhunj capavitor presents an ultimcte lijit to qubih $T_1$. Howevsf, the measured luss tdngent of $5\times 10^{-6}$ would corwespond ii our device to sn enewgy relaxahion bhme around 10 $\mu$s, far in ercess of the mewsured $T_1$. Next, qubit $T_1$ is limitev by coupling tm tve heavijy dakped readout wesonator, a phgnomenon hnown as the Pugcell effxct [@Houck08]. Horever for our fevice and o'erating [aranetees the Ojrcell limit tp qubit $T_1$ is around 20 $\mu$s. Instead the cmrrenj sevices appear cu be limited by pvefcotppiig to dhe flux biav cokl: dcperioents rtreao an pscillatory dependenwe or $T_1$ on qubit bias grcquency wyich we rave determinrd to arise from a freqnency-dxpendemt ympedance transformation of ths dissipahiok looking intj thc flox line. We cnticipate that it will be straightforwacd to suppress this deciherence channel by ve-engineerinj the fias tee mn the flux line and by reducing the kutual inductance froj the xlux hias coil to the qubit.

![Characterization of SOI phase qubit coherence. (a) R
absorbing epoxy to suppress quasiparticle generation due radiation higher temperature of the cryostat control are heavily filtered 4.2 K and the cold stage to suppress thermal of the qubit. We have performed standard microwave pulse sequences to evaluate qubit over a range of bias points; results are shown in Fig. \[fig:figure3\]. Qubit oscillations with characteristic in excess of 500 ns. Qubit Ramsey fringes decay on a shorter timescale of order 100 as our qubit has no flux sweet spot decay is dominated by low frequency magnetic flux noise @Bialzak07; Qubit energy times to $\mu$s have been and energy relaxation times greater than 1 $\mu$s have been measured on multiple devices. These SOI-based phase thus display times that a of better than the of state-of-the-art phase qubits incorporating low-loss [@Wang08; @Neeley08]. It is worthwhile to consider the budget of qubit device. First, dielectric loss in crystalline silicon shunt capacitor presents an ultimate limit qubit $T_1$. However, the measured loss tangent of $5\times 10^{-6}$ would correspond in our device energy relaxation time around $\mu$s, far in of measured Next, $T_1$ is by coupling to the heavily damped readout resonator, a phenomenon known the Purcell effect [@Houck08]. However for our device and operating Purcell to qubit $T_1$ around 20 $\mu$s. Instead current appear to be limited to flux reveal oscillatory of $T_1$ on qubit frequency which we have determined arise from a frequency-dependent looking into the flux line. We anticipate that will be straightforward to suppress this decoherence by re-engineering the bias tee on the flux line and by reducing mutual inductance flux bias coil to the qubit. ![Characterization of phase qubit coherence. (a)
absorbing epoxy to suppress qUasiparticLe genEraTioN dUe to BlacKbody radiation FRom hIgher temperature stages Of the CrYOstaT [@baRends11]. the dc anD MiCROwaVe CoNtrOl LInEs are HeaVily filTered at 4.2 K anD at ThE cold stage to SUpPress thermAl eXcitation of tHe qUbit.

We HaVe pERformEd sTandaRd micrOWave puLse sequenCeS To evalUAte qubiT COhErenCe over a range of biaS PoINts; results are sHown in fiG. \[FiG:FIguRe3\]. QUbit Rabi osCiLlatiONs decay WItH A CHarACteristic time In excess of 500 nS. qubIt RamsEy FriNGes decAy on a ShORteR timescale oF ordEr 100 ns; as our Qubit hAS no flux SWeet spoT RamseY deCay Is doMInAtEd bY eXCesS LoW frEQueNcy magneTiC fLux noIse [@ITHIER05; @BiaLzaK07; @SanK12]. QubiT energy relaxaTioN timES up To 1.6 $\mu$s Have bEen mEaSured, And eneRgy reLaXation times greaTer tHan 1 $\mu$s havE beEn MeaSuRed on MUltiplE deVicEs. These sOI-baseD PhaSe QUBItS thus display energy ReLAXaTion timeS that aRE a FaCTor of 2-3 betTeR thAn thE $t_1$ Times Of stATe-Of-the-art Phase qUBiTs IncorpoRaTing loW-lOss A-Si:h shunT CapaCitors [@wang08; @NeelEy08]. It iS Worthwhile to coNSider the coherENcE BUdGEt of Our Qubit device. firsT, DielEctrIC lOss IN the cRystaLlINe SIlicon shunt capacitoR pResentS an ulTimate limit to Qubit $T_1$. HoweVER, The measuRed lOSs TAngent of $5\times 10^{-6}$ wOuld cOrrespond iN Our devicE to an Energy reLaxation tIME around 10 $\mU$s, fAr iN exCesS OF tHe measured $T_1$. NeXT, QubiT $T_1$ Is limitEd bY coupliNg tO thE heAviLy Damped reaDout resoNaToR, a PhEnoMenon KNown as thE PUrcElL efFect [@HOUck08]. HowEver fOr ouR dEvICe aNd operaTInG PAramEtErS the purCeLl limIt to QUbiT $T_1$ is aroUnd 20 $\mu$s. InsTeaD The cUrReNt devicEs appear to be lImIted by overCoUplIng to tHE Flux bias Coil: experiments reveal an OScillatOry DepenDencE of $T_1$ on qubIt bIas freQueNCy whicH we havE deteRmIneD TO arisE FRoM a fReQuency-depeNDEnt ImpedAnCe trAnsformAtion of the dissipatIOn lOoking into the FluX linE. wE aNtiCIpATe tHaT It wILL be straightforwArd to supprEsS ThIs decohereNCe cHaNnel by rE-engineEring THe bias tEe on the flUx line and By ReduCINg tHe mutual inDuctance From the flUX bias COiL to thE quBit.

![ChaRaCteRizatIon of Soi phAse quBit cohErEnce. (a) R
absorbing epoxy to suppres s quasipar ticle  ge ner at iondueto blackbody r a diat ion from higher temper ature  s t ages of  thecryosta t  [ @ B are nd s1 1].  T h edc an d m icrowav e controllin es  are heavily fi ltered at4.2  K and at th e c old st ag e t o  supp res s the rmal e x citati on of the  q u bit.
W e havep e rf orme d standard microw a ve pulse sequence s to e va l ua t e  qu bit  coherence  o ver a range o f  b i a s  po i nts; resultsare shown i n  Fi g. \[f ig :fi g ure3\] . Qub it Rab i oscillati onsdecay wit h a ch a racteri s tic tim e in e xce ssof 5 0 0ns . Q ub i t R a ms eyf rin ges deca yon  a sh orte r t i mesc ale  oforder  100 ns; as o urqubi t  ha s nofluxswee tspotRamsey  deca yis dominated by  exc ess low f req ue ncy  m agnet i c flux  no ise  [@Ithi er05; @ B ial za k 0 7 ;@Sank12]. Qubit en er g y  r elaxatio n time s  u pt o 1.6 $\ mu $shave b een m easu r ed , and en ergy r e la xa tion ti me s grea te r t han  1 $\ m u$shave b een meas uredo n multiple dev i ces. These SO I -b a s ed phas e q ubits thusdisp l ay e nerg y  r ela x ation  time st ha t  are a factor of 2- 3better  than  the $T_1$ ti mes of sta t e - of-the-a rt p h as e  qubits incorp orati ng low-los s  a-Si:Hshunt  capacit ors [@Wan g 0 8; @Neel ey0 8].  It  is w or thwhile to co n s ider  t he cohe ren ce budg etofour  qu bi t device.  First,di el ec tr iclossi n the cr ys tal li nesilic o n shun t cap acit or  p r ese nts anu lt i m ateli mi t to  qu bi t $T_ 1$.H owe ver, th e measure d l o ss t an ge nt of $ 5\times 10^{- 6} $ would co rr esp ond in o ur devic e to an energy relaxati o n timearo und 1 0 $\ mu$s, far  in  exces s o f  the m easure d $T_ 1$ . N e x t, qu b i t$T_ 1$  is limite d bycoupl in g to  the he avily damped reado u t r esonator, a p hen omen o n  k now n  a s  th eP urc e l l effect [@Houc k08]. Howe ve r  f or our dev i cean d opera ting pa ramet e rs thePurcell l imit to q ub it $ T _ 1$is around20 $\mu$ s. Instea d  thec ur rentdev ices a pp ear  to b e limi t edby ov ercoup li ng tothe f lu x bias c oil: experiments reveal  an os cilla tor y depende nce of$T_1$ onqubi t bias fre que ncy  whic h w e  have  det e rm ine d  to a rise from a fr e qu enc y - de pendent imp e d a nce  tran sfo r mation  ofthe dissipation l o oking into the  flu x lin e.W e an ti cipate that it  wi ll b e straig ht forward tosuppress  t h is de cohere nce ch annel b y re - engine erin g t he bias t eeon the flu xli n e andby r ed ucingthe mu t uali n ductance from th e flu x biasc oil  to t he  qubit. 
![C haracteriz ation of SO I phas e qu bit c oherenc e.  (a) R 
absorbing epoxy_to suppress_quasiparticle generation due to_blackbody radiation_from_higher temperature_stages_of the cryostat_[@Barends11]. The dc_and microwave control lines_are heavily filtered_at_4.2 K and at the cold stage to suppress thermal excitation of the qubit.

We have_performed_standard microwave_pulse_sequences_to evaluate qubit coherence over_a range of bias points;_results are_shown in Fig. \[fig:figure3\]. Qubit Rabi oscillations decay with_a_characteristic time in_excess of 500 ns. Qubit Ramsey fringes decay on a_shorter timescale of order 100 ns; as_our qubit has_no_flux_sweet spot Ramsey decay_is dominated by excess low frequency_magnetic flux noise [@Ithier05; @Bialzak07; @Sank12]._Qubit energy relaxation times up to 1.6 $\mu$s_have been measured, and energy relaxation_times greater than 1 $\mu$s have_been measured_on multiple devices. These SOI-based_phase qubits thus_display energy_relaxation times that_are a factor of 2-3 better_than the $T_1$_times of state-of-the-art phase qubits incorporating_low-loss_a-Si:H shunt capacitors_[@Wang08;_@Neeley08]._It is_worthwhile to consider_the_coherence budget_of_our qubit device. First, dielectric loss_in_the crystalline silicon shunt capacitor presents an_ultimate limit to qubit_$T_1$._However, the measured loss_tangent of $5\times 10^{-6}$ would_correspond in our device to an_energy relaxation_time around_10 $\mu$s, far in excess of the measured $T_1$. Next, qubit $T_1$_is limited by coupling to the_heavily damped readout resonator,_a phenomenon_known_as the Purcell_effect_[@Houck08]. However_for our device and operating parameters the_Purcell limit_to qubit $T_1$ is around 20 $\mu$s._Instead the current devices_appear_to be limited by overcoupling to_the flux bias coil: experiments reveal_an oscillatory dependence of $T_1$_on_qubit_bias frequency which we have_determined to arise from a frequency-dependent_impedance transformation of_the dissipation looking into the flux line._We_anticipate that it will be straightforward_to_suppress this decoherence channel by re-engineering_the_bias_tee on the flux line_and by reducing the mutual inductance_from the flux bias coil to the qubit.

![Characterization of_SOI phase qubit_coherence. (a) R