 stray capacitances $C_s$ from the board, components and packaging.

The bandwidth $BW$ of the photoreceiver can be estimated as $$BW=\sqrt{\frac{GBWP}{2\pi R_f\,C_T}},
 \label{BW}$$ where $GBWP$ is the gain-bandwidth product of the operational amplifier. The total TIA input current noise $I_{\mathrm{noise}}(f)$ model can be expressed as $$I_{noise}(f)=\sqrt{i_T^2+i_{TIA}^2(f)}\,\cdot\|\overline{TF}(f)\|,
 \label{i_noise}$$ where $\|\overline{TF}(f)\|$ is the normalized TIA transfer function, $i_{TIA}(f)$ is a frequency dependent component of the input current noise (see Equation \[i\_tia\]), and $i_T$ is the quadrature sum of various contributors that can be approximated by neglecting their frequency dependency for modeling purposes. For example, the expected current noise $i_T$ in the photoreceiver shown in Figure \[tia\], can be computed as $$i_T=\sqrt{i_n^2+i_J^2+i_d^2},
 \label{it}$$ where $i_n$ is the op-amp current noise, $i_J$ is the Johnson noise of the feedback resistor $R_f$ (see Equation \[i\_j\]), and $i_d$ is the shot-noise from the photodiode dark current. It can be seen from Equation \[Ct\] that the photodiode capacitance and the op-amp common-mode input capacitance are crucial factors in the total noise budget. The challenge for the photodiode manufacture lays in achieving a minimum capacitance per unit area while maintaining high responsivity and low leakage if reverse-biased. For the TIA electronics, it is necessary to identify an op-amp with minimal common-mode input capacitance, current and voltage noise, and a gain-bandwidth product large enough to maintain the required sensitivity over the required measurement bandwidth of 2–20MHz.

Prototype photoreceivers
========================

Collaboration with industry {#DS_proto}
---------------------------

Under a Small Business Innovation Research (SBIR) grant, the company Discovery Semiconductors has developed a large-area quadrant photodiode (QPD) of 1mm diameter
stray capacitances $ C_s$ from the board, components and promotion. 

 The bandwidth $ BW$ of the photoreceiver can be estimate as $ $ BW=\sqrt{\frac{GBWP}{2\pi R_f\,C_T } }, 
  \label{BW}$$ where $ GBWP$ is the gain - bandwidth product of the functional amplifier. The total TIA remark current noise $ I_{\mathrm{noise}}(f)$ exemplar can be expressed as $ $ I_{noise}(f)=\sqrt{i_T^2+i_{TIA}^2(f)}\,\cdot\|\overline{TF}(f)\|, 
  \label{i_noise}$$ where $ \|\overline{TF}(f)\|$ is the normalized TIA transportation affair, $ i_{TIA}(f)$ is a frequency dependent part of the input current noise (see Equation   \[i\_tia\ ]), and $ i_T$ is the quadrature sum of diverse contributors that can be approximated by neglecting their frequency dependency for modeling purpose. For example, the expected current noise $ i_T$ in the photoreceiver show in Figure   \[tia\ ], can be computed as $ $ i_T=\sqrt{i_n^2+i_J^2+i_d^2 }, 
  \label{it}$$ where $ i_n$ is the op - amp current noise, $ i_J$ is the Johnson noise of the feedback resistor $ R_f$ (see Equation   \[i\_j\ ]), and $ i_d$ is the shooting - noise from the photodiode dark current. It can be seen from Equation   \[Ct\ ] that the photodiode capacitor and the op - amp common - mode input capacitance are crucial factors in the entire noise budget. The challenge for the photodiode manufacture lays in achieving a minimum capacitance per unit area while maintaining high responsivity and abject leakage if reverse - bias. For the TIA electronics, it is necessary to name an op - amp with minimal coarse - mode input capacitor, current and voltage randomness, and a gain - bandwidth product large enough to keep the required sensitivity over the required measurement bandwidth of 2–20MHz. 

 Prototype photoreceivers 
 = = = = = = = = = = = = = = = = = = = = = = = = 

 Collaboration with industry { # DS_proto } 
 --------------------------- 

 Under a Small Business Innovation Research (SBIR) grant, the company Discovery Semiconductors has developed a large - area quadrant photodiode (QPD) of 1 mm diameter
 stgay capacitances $C_s$ from the board, components end paciaging.

Thd bandwidth $BW$ of the photorxceicer cqn be estimated as $$BW=\sdrt{\frac{GBAP}{2\pi R_f\,C_R}},
 \lauel{BW}$$ where $GBWP$ is the ncin-bahfwidch product of thg operationan amplifier. Tha gocal TIA input current noise $I_{\mathrm{njise}}(f)$ mpdfl can be exprgssed ws $$I_{hoise}(f)=\sqrt{i_T^2+i_{TIA}^2(f)}\,\cdot\|\overline{TF}(f)\|,
 \lzbel{i_nopse}$$ where $\|\overlinr{TF}(f)\|$ is the normalized TIA trajsfer function, $i_{TIW}(f)$ is a frewuenst dependent zomponent of the input current noise (see Equation \[i\_tia\]), and $n_T$ is the qocerahore sum of verious contributors that cdn be alproximated by nejlecring their frequency vependency for modelyng purpovea. For example, the ezpectgd cusreng nokse $i_V$ ih the ohovoreceiver ahown in Fiture \[tia\], can be compitqe as $$i_T=\sqrt{i_n^2+j_J^2+i_d^2},
 \lwbql{it}$$ where $i_n$ is the op-amp current noist, $i_J$ js the Johnson noise of the feedback resistot $R_f$ (see Ezuation \[i\_j\]), and $i_d$ is the shot-noise from the photodhode vafk emvreng. Ih can be seen from Equation \[Ct\] that the photodykdt cspacitance and the op-amp volmpg-mode input cxpacitchcs are crucial factlrs in jhe toral noise budbet. The challenge for the pyotodiode mauufqcture lays in achneving a minnmum cspaciyance per unit area whiue mzintaining jigh respkvsivity and low uealace if reverse-biased. For thq TIA elertronncs, it ir nevessarr to identlfy ak op-amp with minimap comlot-mode inpuh capacitance, current and voltajx noise, and a gdin-tandwidtk prodmct large enougr to maintain jhe requixed sevsitivity kver thx required mqasurement batfwidth of 2–20MHv.

Prototypq phitorwceiverr
========================

Zollaboration eith industry {#DS_proro}
---------------------------

Under a Small Buxingsa Innovation Reweatxh (SBIR) grant, yhe coipwnb Dissmvery Semicotducgorr has aeveloptb a uargr-area quadrant photogiods (QPD) of 1mm diametrr
stray capacitances $C_s$ from the board, components The $BW$ of photoreceiver can be where is the gain-bandwidth of the operational The total TIA input current noise model can be expressed as $$I_{noise}(f)=\sqrt{i_T^2+i_{TIA}^2(f)}\,\cdot\|\overline{TF}(f)\|, \label{i_noise}$$ where $\|\overline{TF}(f)\|$ is the normalized TIA function, $i_{TIA}(f)$ is a frequency dependent component of the input current noise (see \[i\_tia\]), $i_T$ the sum of various contributors that can be approximated by neglecting their frequency dependency for modeling purposes. example, the expected current noise $i_T$ in the shown in Figure \[tia\], be computed as $$i_T=\sqrt{i_n^2+i_J^2+i_d^2}, \label{it}$$ $i_n$ the op-amp noise, is Johnson noise of feedback resistor $R_f$ (see Equation \[i\_j\]), and $i_d$ is the shot-noise from the photodiode dark current. It be seen \[Ct\] that photodiode and op-amp common-mode input crucial factors in the total noise for the photodiode manufacture lays in achieving a capacitance per area while maintaining high responsivity and leakage if reverse-biased. For the TIA electronics, it necessary to identify an op-amp with minimal common-mode input capacitance, current and voltage noise, and product large enough to the required sensitivity the measurement of Prototype photoreceivers Collaboration with industry {#DS_proto} --------------------------- Under a Small Business Innovation Research grant, the company Discovery Semiconductors has developed a large-area quadrant of diameter
 stray capacitances $C_s$ from thE board, compOnentS anD paCkAginG.

The Bandwidth $BW$ of tHE phoToreceiver can be estimatEd as $$Bw=\sQRt{\frAC{GbWP}{2\pi r_f\,C_T}},
 \labEL{Bw}$$ WHerE $GbWp$ is ThE GaIn-banDwiDth prodUct of the opEraTiOnal amplifieR. thE total TIA iNpuT current noisE $I_{\mAthrm{nOiSe}}(f)$ MOdel cAn bE exprEssed aS $$i_{noise}(F)=\sqrt{i_T^2+i_{TiA}^2(F)}\,\Cdot\|\ovERline{TF}(F)\|,
 \LAbEl{i_nOise}$$ where $\|\overline{tf}(f)\|$ IS the normalized tIA traNsFEr FUNctIon, $I_{TIA}(f)$ is a frEqUency DEpendenT CoMPONenT Of the input curRent noise (seE equAtion \[i\_TiA\]), anD $I_T$ is thE quadRaTUre Sum of variouS conTributors That caN Be approXImated bY negleCtiNg tHeir FReQuEncY dEPenDEnCy fOR moDeling puRpOsEs. For ExamPLE, THe exPecTed cUrrenT noise $i_T$ in the PhoToreCEivEr shoWn in FIgurE \[tIa\], can Be compUted aS $$i_t=\sqrt{i_n^2+i_J^2+i_d^2},
 \labeL{it}$$ wHere $i_n$ is tHe oP-aMp cUrRent nOIse, $i_J$ iS thE JoHnson noIse of thE FeeDbACK ReSistor $R_f$ (see EquatioN \[i\_J\]), ANd $I_d$ is the sHot-noiSE fRoM The photoDiOde Dark CURrent. it caN Be Seen from equatiON \[CT\] tHat the pHoTodiodE cApaCitAnce aND the Op-amp cOmmon-modE inpuT Capacitance are CRucial factors IN tHE ToTAl noIse Budget. The chAlleNGe foR the PHoTodIOde maNufacTuRE lAYs in achieving a minimUm CapaciTance Per unit area whIle maintaiNING high resPonsIViTY and low leakage If revErse-biased. fOr the TIA ElectRonics, it Is necessaRY To identiFy aN op-Amp WitH MInImal common-modE INput CaPacitanCe, cUrrent aNd vOltAge NoiSe, And a gain-bAndwidth PrOdUcT lArgE enouGH to maintAiN thE rEquIred sENsitivIty ovEr thE rEqUIreD measurEMeNT BandWiDtH of 2–20Mhz.

PRoTotypE phoTOreCeivers
========================

collaboraTioN With InDuStry {#DS_pRoto}
---------------------------

Under a SmaLl business InNoVatIon ResEARch (SBIR) gRant, the company Discovery sEmicondUctOrs haS devEloped a laRge-Area quAdrANt photOdiode (qPD) of 1Mm DiaMETer
 stray capacitances $C_s$from the b oard,  co mpo ne ntsandpackaging.

Th e  ban dwidth $BW$ of the pho torec ei v er c a nbe es timated as $ $BW =\ sq rt{ \f r ac {GBWP }{2 \pi R_f \,C_T}},
\la be l{BW}$$ wher e  $ GBWP$ is t hegain-bandwid thproduc toft he op era tiona l ampl i fier.The total  T I A inpu t  curren t no ise$I_{\mathrm{noise } }( f )$ model can b e expr es s ed a s $ $I_ {noise}(f) =\ sqrt{ i _T^2+i_ { TI A } ^ 2(f ) }\,\cdot\|\ov erline{TF}( f )\| ,
 \la be l{i _ noise} $$ wh er e  $\ |\overline{ TF}( f)\|$ isthe no r malized TIA tra nsferfun cti on,$ i_ {T IA} (f ) $ i s  a  fr e que ncy depe nd en t com pone n t o f th e i nput  curr ent noise (se e E quat i on\[i\_ tia\] ), a nd  $i_T $ is t he qu ad rature sum of v ario us contri but or s t ha t can be app rox ima ted byneglect i ngth e i r  f requency dependenc yf o rmodeling  purpo s es .F or examp le , t he e x p ected  cur r en t noise$i_T$i nth e photo re ceiver  s how n i n Fig u re \ [tia\] , can be  comp u ted as $$i_T=\ s qrt{i_n^2+i_J ^ 2+ i _ d^ 2 },
\la bel{it}$$ w here $i_n $ is th e o p -ampcurre nt no i se, $i_J$ is the Jo hn son no ise o f the feedbac k resistor $ R _f$ (see  Equ a ti o n \[i\_j\]), a nd $i _d$ is the shot-noi se fr om the p hotodiode d ark curr ent . I t c anb e  s een from Equa t i on \ [C t\] tha t t he phot odi ode  ca pac it ance andthe op-a mp  c om mo n-m ode i n put capa ci tan ce  ar e cru c ial fa ctors  inth et ota l noise bu d g et.Th echal len ge  forthep hot odiodemanufactu rel aysin  a chievin g a minimum c ap acitance p er  un it are a while ma intaining high responsi v ity and  lo w lea kage  if rever se- biased . F o r theTIA el ectro ni cs, i t isn e ce ssa ry  to identi f y  an  op-a mp  wit h minim al common-mode inp u t c apacitance, c urr enta n dvol t ag e  no is e , a n d  a gain-bandwid th product  l a rg e enough t o  ma in tain th e requi red s e nsitivi ty over t he requir ed  mea s u rem ent bandwi dth of 2 –20MHz.
P rotot y pe  phot ore ceiver s=== ===== ====== = === ===== =

Col la borati on wi th  industr y {#DS_proto}
--------- ------ ----- --- ----

Und era  Sm all Busin essInnovation  Re sea rch ( SBI R ) gra nt,t he  co m panyDisc o very Semi c on duc t o rs  has develo p e d  alarge -ar e a quad rant  photodiode (QPD) of 1mm diamete r
 stray_capacitances $C_s$_from the board, components_and packaging.

The_bandwidth_$BW$ of_the_photoreceiver can be_estimated as $$BW=\sqrt{\frac{GBWP}{2\pi_R_f\,C_T}},
 \label{BW}$$ where $GBWP$_is the gain-bandwidth_product_of the operational amplifier. The total TIA input current noise $I_{\mathrm{noise}}(f)$ model can be_expressed_as $$I_{noise}(f)=\sqrt{i_T^2+i_{TIA}^2(f)}\,\cdot\|\overline{TF}(f)\|,
_\label{i_noise}$$_where_$\|\overline{TF}(f)\|$ is the normalized TIA_transfer function, $i_{TIA}(f)$ is a_frequency dependent_component of the input current noise (see Equation \[i\_tia\]),_and_$i_T$ is the_quadrature sum of various contributors that can be approximated_by neglecting their frequency dependency for_modeling purposes. For_example,_the_expected current noise $i_T$_in the photoreceiver shown in Figure \[tia\],_can be computed as $$i_T=\sqrt{i_n^2+i_J^2+i_d^2},
 \label{it}$$_where $i_n$ is the op-amp current noise,_$i_J$ is the Johnson noise of_the feedback resistor $R_f$ (see_Equation \[i\_j\]), and_$i_d$ is the shot-noise from_the photodiode dark_current. It_can be seen_from Equation \[Ct\] that the photodiode capacitance_and the op-amp_common-mode input capacitance are crucial factors_in_the total noise_budget._The_challenge for_the photodiode manufacture_lays_in achieving_a_minimum capacitance per unit area while_maintaining_high responsivity and low leakage if reverse-biased._For the TIA electronics,_it_is necessary to identify_an op-amp with minimal common-mode_input capacitance, current and voltage noise,_and a_gain-bandwidth product_large enough to maintain the required sensitivity over the required measurement_bandwidth of 2–20MHz.

Prototype photoreceivers
========================

Collaboration with industry_{#DS_proto}
---------------------------

Under a Small Business_Innovation Research_(SBIR)_grant, the company_Discovery_Semiconductors has_developed a large-area quadrant photodiode (QPD) of_1mm diameter