\_drude\]
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In the last section, we demonstrated that the free carrier density in silicon may increase by as much as nine orders of magnitude during the irradiation with an ultrashort laser pulse. In the following, we will investigate the importance of the transient, density-dependent optical parameters. For simplicity, we assume here that the carrier system is non-degenerate and neglect carrier and energy transport.

![\[fig:drude\_vs\_T-expression\] (Color online) Reflectivity (a), carrier density as well as carrier and lattice temperature (b) calculated using either the $T$-expression or the Drude model.](3)

Figure \[fig:drude\_vs\_T-expression\] depicts the reflectivity during the irradiation of silicon calculated using the $T$-expression (solid curve) and the Drude model (dashed curve), respectively, to determine both the reflectivity and the FCA coefficient as denoted in Tab. \[tab:model\_parameters\]. We immediately notice major differences: While the reflectivity calculated with the $T$-expression increases mirroring the behavior of lattice temperature, the reflectivity calculated with the Drude model decreases mirroring the inverse behavior of carrier density. The reflectivity calculated with the Drude model already shows significant changes during irradiation, while the increase calculated with the $T$-expression is delayed and less pronounced.

Figure \[fig:drude\_vs\_T-expression\] clearly shows that the drastically different behavior of reflectivity has an impact on carrier and lattice temperatures as well as carrier density. The maxima of carrier density as well as carrier and lattice temperatures are all higher when using the Drude model than when using the $T$-expression. This is most prominent for carrier temperature but also noticeable for the final lattice temperature. The densities calculated using the Drude model and the $T$-expression, respectively, deviate at their maximum but tend towards similar values for later times. The reason is that Auger recombination, as a three particle process, is much stronger for higher densities.

The significant differences, especially in temperature, shown in Fig. \[fig:drude\_vs\_T-expression\] indicate that the choice of using either the $T$-expression or the Drude model to calculate reflectivity and FCA coefficient might strongly influence the damage thresholds estimated applying the nTTM.

![\[fig:threshols\_drude\_vs\_T\] (Color online) Damage thresholds calculated
\_drude\ ] 
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 In the last section, we demonstrated that the free mailman concentration in silicon may increase by as much as nine orders of order of magnitude during the irradiation with an ultrashort laser pulsation. In the following, we will investigate the importance of the transient, concentration - dependent optical parameters. For ease, we assume here that the carrier organization is non - degenerate and neglect carrier and department of energy transport. 

! [ \[fig: drude\_vs\_T - expression\ ] (Color online) Reflectivity (a), carrier density as well as carrier and lattice temperature (b) calculate using either the $ T$-expression or the Drude model.](3) 

 Figure   \[fig: drude\_vs\_T - expression\ ] depicts the reflectiveness during the irradiation of silicon calculated using the $ T$-expression (hearty curve) and the Drude model (dashed curve), respectively, to determine both the reflectiveness and the FCA coefficient as denoted in Tab.   \[tab: model\_parameters\ ]. We immediately notice major differences: While the reflectivity calculated with the $ T$-expression increases mirroring the behavior of lattice temperature, the reflectivity calculated with the Drude model decreases mirroring the inverse behavior of carrier density. The coefficient of reflection calculated with the Drude model already show meaning change during irradiation, while the increase calculate with the $ T$-expression is stay and less pronounced. 

 Figure   \[fig: drude\_vs\_T - expression\ ] intelligibly shows that the drastically different behavior of reflectivity has an impact on carrier wave and lattice temperatures as well as carrier concentration. The maxima of carrier concentration as well as carrier and lattice temperatures are all higher when practice the Drude model than when using the $ T$-expression. This is most prominent for carrier temperature but also noticeable for the final wicket temperature. The densities calculated using the Drude model and the $ T$-expression, respectively, deviate at their maximum but tend towards alike values for late times. The rationality is that Auger recombination, as a three particle summons, is much stronger for higher densities. 

 The significant difference, especially in temperature, show in Fig.   \[fig: drude\_vs\_T - expression\ ] indicate that the choice of using either the $ T$-expression or the Drude model to calculate coefficient of reflection and FCA coefficient might strongly influence the wrong thresholds estimated apply the nTTM. 

! [ \[fig: threshols\_drude\_vs\_T\ ] (Color online) Damage thresholds calculated
\_drufe\]
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In the last section, we demonstrated tkqt the free darrier aensity in silicon may increese vy as much as nine orders ow magnitufe durint tht irradiation witi an ultvcshorf laszr pulse. In the nollowing, wa will investicage the importance of the transient, degsity-delejdent optical karamttews. Fkg wimplicity, we assume here thaf the cerrier system ix non-degenerate and neglech cagrier and energy tgansport.

![\[fig:erudq\_cs\_T-expressiov\] (Color online) Reflectjvity (a), carrier density as well as ccrrier and oartifg temperaturx (b) cajculated usikb eithar the $Y$-expression or thx Dryde model.](3)

Figure \[fig:druve\_vs\_T-expression\] depists the rafmectivity during rhw irrddiadion if riljcpn calcupatxd using ths $T$-expressiin (solid curve) and uhe Erude model (dzshed suwve), respectively, to determine both the geflsctivity and the FCA cowfficient as denoted ln Tab. \[tab:iodel\_parameters\]. We immediately notice major diffesencea: Whnoe thd rfflectivity calculated with the $T$-expression igdrtasvs mirroring the nehavior of latticr hekkerature, the rgflectirjtg calculated with hhe Druqe moeel decrewses mirroring the inverse behacior of carrper eensity. The refleccivity calcuuatec witn the Drude model alreaby shoss significwnt changsr during irradiagiok, wvile the increase calculatqd with tie $T$-erpressiov is delayqd and lesd prokmunced.

Figure \[fig:drufe\_vs\_T-gxpresvion\] clearpy shows that the drastically dmhferent behavoos ox refleccivity has an impace on carrier aud lattiee temoeratures zs well as carrier density. The kwxima of carcier densyty qs wwll as zxrrier and latyice tempvrctures arw all higher when msing fhe Drude model thqn when using tne $G$-ex[rvssmon. Trhs is most psomiveng for zarrier temierxturr but also noticeabla fod the final latticr bemperatute. The degsities calcukated using the Drkde mmdeu and thg $T$-expression, respectively, devizte at thfir maximum but tene towards sikilar values for later times. The reason is that Auger recimbination, as a thrge karticle procxss, is much strmnger for higher denwities.

The signifigant differences, especjally hn telperature, shown in Fig. \[fig:drude\_vs\_T-expression\] indicate that the choice of uwing emtrer the $T$-exlresxion mr che Druqe mlvel to calculate geflectivity and FCA coefficient might sdrjngly influence the damage tnrdsholds estimxted applying the nTTM.

![\[fif:threshoks\_drude\_vs\_T\] (Color online) Damage yhresholds calculated
\_drude\] ---------------------------------------------------------------------------- In the last section, we the carrier density silicon may increase orders magnitude during the with an ultrashort pulse. In the following, we will the importance of the transient, density-dependent optical parameters. For simplicity, we assume here the carrier system is non-degenerate and neglect carrier and energy transport. ![\[fig:drude\_vs\_T-expression\] (Color Reflectivity carrier as as carrier and lattice temperature (b) calculated using either the $T$-expression or the Drude model.](3) Figure depicts the reflectivity during the irradiation of silicon using the $T$-expression (solid and the Drude model (dashed respectively, determine both reflectivity the coefficient as denoted Tab. \[tab:model\_parameters\]. We immediately notice major differences: While the reflectivity calculated with the $T$-expression increases mirroring the of lattice reflectivity calculated the model mirroring the inverse carrier density. The reflectivity calculated with already shows significant changes during irradiation, while the calculated with $T$-expression is delayed and less pronounced. \[fig:drude\_vs\_T-expression\] clearly shows that the drastically different behavior reflectivity has an impact on carrier and lattice temperatures as well as carrier density. The carrier density as well carrier and lattice are higher using Drude model when using the $T$-expression. This is most prominent for carrier temperature also noticeable for the final lattice temperature. The densities calculated Drude and the $T$-expression, deviate at their maximum tend similar values for later reason that a particle is much stronger for densities. The significant differences, especially temperature, shown in Fig. of using either the $T$-expression or the Drude to calculate reflectivity and FCA coefficient might influence the damage thresholds estimated applying the nTTM. ![\[fig:threshols\_drude\_vs\_T\] (Color online) Damage calculated
\_drude\]
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In the last section, we deMonstrated That tHe fRee CaRrieR denSity in silicon mAY incRease by as much as nine ordErs of MaGNituDE dUring The irraDIaTIOn wItH aN ulTrAShOrt laSer Pulse. In The followiNg, wE wIll investigaTE tHe importanCe oF the transienT, deNsity-dEpEndENt optIcaL paraMeters. fOr simpLicity, we aSsUMe here THat the cARRiEr syStem is non-degeneraTE aND neglect carrieR and enErGY tRANspOrt.

![\[Fig:drude\_vs\_t-eXpresSIon\] (ColoR OnLINE) ReFLectivity (a), carRier density AS weLl as caRrIer ANd lattIce teMpERatUre (b) calculaTed uSing eitheR the $T$-eXPressioN Or the DrUde modEl.](3)

FIguRe \[fiG:DrUdE\_vs\_t-eXPreSSiOn\] dEPicTs the refLeCtIvity DuriNG THE irrAdiAtioN of siLicon calculatEd uSing THe $T$-ExpreSsion (SoliD cUrve) aNd the DRude mOdEl (dashed curve), reSpecTively, to dEteRmIne BoTh the REflectIviTy aNd the FCa coeffiCIenT aS DENoTed in Tab. \[tab:model\_paRaMETeRs\]. We immeDiatelY NoTiCE major diFfEreNces: wHIle thE refLEcTivity caLculatED wItH the $T$-exPrEssion InCreAseS mirrORing The behAvior of lAtticE Temperature, the REflectivity caLCuLATeD With The drude model dEcreASes mIrroRInG thE InverSe behAvIOr OF carrier density. The rEfLectivIty caLculated with tHe Drude modEL ALready shOws sIGnIFicant changes dUring IrradiatioN, While the IncreAse calcuLated with THE $T$-expresSioN is DelAyeD ANd Less pronounceD.

fIgurE \[fIg:drude\_Vs\_T-ExpressIon\] CleArlY shOwS that the dRasticalLy DiFfErEnt BehavIOr of reflEcTivItY haS an imPAct on cArrieR and LaTtICe tEmperatUReS AS welL aS cArriEr dEnSity. THe maXIma Of carriEr density As wELl as CaRrIer and lAttice temperaTuRes are all hIgHer When usING the DrudE model than when using the $T$-EXpressiOn. THis is Most Prominent For CarrieR teMPeratuRe but aLso noTiCeaBLE for tHE FiNal LaTtice tempeRATurE. The dEnSitiEs calcuLated using the Drude MOdeL and the $T$-expreSsiOn, reSPEcTivELy, DEviAtE At tHEIr maximum but tenD towards siMiLAr Values for lATer TiMes. The rEason is That AUGer recoMbination, As a three pArTiclE PRocEss, is much sTronger fOr higher dENsitiES.

THe sigNifIcant dIfFerEnces, EspeciALly In temPeratuRe, Shown iN Fig. \[fIg:Drude\_vs\_T-Expression\] indicate that tHe choiCe of uSinG either thE $T$-eXPreSsion or thE DruDe model to cAlcUlaTe refLecTIvity And Fca cOefFIcienT migHT strongly INfLueNCE tHe damage thrESHOldS estiMatED applyIng tHe nTTM.

![\[fig:thresholS\_Drude\_vs\_T\] (Color oNlinE) dAmaGe tHReshOlDs calculated
\_drude\]
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In the las t sec ti o n, w e  d emons tratedt ha t the  f re e c ar r ie r den sit y in si licon mayinc re ase by as mu c has nine or der s of magnitu deduring  t hei rradi ati on wi th anu ltrash ort laser  p u lse. I n  the fo l l ow ing,  we will investig a te the importance  of th et ra n s ien t,density-de pe ndent optical pa r a m ete r s. For simpli city, we as s ume  hereth att he car riersy s tem  is non-deg ener ate and n eglect carrier and ene rgy tr ans por t.
! [\ [f ig: dr u de\ _ vs \_T - exp ression\ ](C oloronli n e ) Refl ect ivit y (a) , carrier den sit y as wel l ascarri er a nd  latt ice te mpera tu re (b) calculat ed u sing eith erth e $ T$ -expr e ssionorthe  Drudemodel.] ( 3)
F i g u re  \[fig:drude\_vs\_ T- e x pr ession\]  depic t sth e  reflect iv ity  dur i n g the  irr a di ation of  silic o nca lculate dusingth e $ T$- expre s sion  (soli d curve)  andt he Drude model (dashed curve ) ,r e sp e ctiv ely , to determ ineb othther ef lec t ivity  andth e  F C A coefficient as de no ted in  Tab.  \[tab:model\ _parameter s \ ] . We imm edia t el y  notice majordiffe rences: Wh i le the r eflec tivity c alculated w ith the$T$ -ex pre ssi o n  i ncreases mirr o r ingth e behav ior  of lat tic e t emp era tu re, the r eflectiv it yca lc ula ted w i th the D ru demo del  decr e ases m irror ingth ei nve rse beh a vi o r  ofca rr ierden si ty. T he r e fle ctivity  calculat edw ithth eDrude m odel alreadysh ows signif ic ant  chang e s  duringirradiation, while thei ncrease  ca lcula tedwith the$T$ -expre ssi o n is d elayed  andle ssp r onoun c e d. 

F ig ure \[fig: d r ude \_vs\ _T -exp ression \] clearly shows t h atthe drastical lydiff e r en t b e ha v ior  o f  re f l ectivity has an  impact on  c a rr ier and la t tic etempera tures a s wel l  as car rier dens ity. Thema xima o f c arrier den sity aswell as c a rrier an d lat tic e temp er atu res a re all hig her w hen us in g theDrude  m odel tha n when using the $T$-ex pressi on. T his  is mostpro m ine nt for ca rrie r temperat ure  bu t als o n o ticea blef or  th e  fina l la t tice temp e ra tur e .  T he densitie s c alc ulate d u s ing th e Dr ude model and the $T$-expression , re s p ect ive l y, d ev iate at theirmax im u m  but ten dtowards sim ilar val ue s  forlatertimes.  The re a s on is tha t Au ger  recombin ati on ,  as a t hr ee partic le p ro cess,is muc h  str o n ger for higher d ensit i e s.

T h e s ignif ic ant dif f eren ces, espec ially in te mperat ure,  show n in Fi g.  \[fig :dr ud e\_vs\_T-e x pression\ ] ind icate t ha t th e c hoiceof u s i ng ei ther  t he$T$-expre s s io n  o rt heDrud e mod el  tocalculate reflecti vit y  and FC Acoe f f icient mi g h t strongly  in fluen c e  the damag e  thr e sh o lds e stimat ed app lying t h e n TT M.

![\ [fi g : threshols \_drude\_ v s\_ T\ ] (C olor onl in e) D am age  t hresholds calcu lated
\_drude\]
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In the_last section,_we demonstrated that the_free carrier_density_in silicon_may_increase by as_much as nine_orders of magnitude during_the irradiation with_an_ultrashort laser pulse. In the following, we will investigate the importance of the transient,_density-dependent_optical parameters._For_simplicity,_we assume here that the_carrier system is non-degenerate and_neglect carrier_and energy transport.

![\[fig:drude\_vs\_T-expression\] (Color online) Reflectivity (a), carrier_density_as well as_carrier and lattice temperature (b) calculated using either the_$T$-expression or the Drude model.](3)

Figure \[fig:drude\_vs\_T-expression\] depicts_the reflectivity during_the_irradiation_of silicon calculated using_the $T$-expression (solid curve) and the_Drude model (dashed curve), respectively, to_determine both the reflectivity and the FCA_coefficient as denoted in Tab. \[tab:model\_parameters\]. We_immediately notice major differences: While_the reflectivity_calculated with the $T$-expression increases_mirroring the behavior_of lattice_temperature, the reflectivity_calculated with the Drude model decreases_mirroring the inverse_behavior of carrier density. The reflectivity_calculated_with the Drude_model_already_shows significant_changes during irradiation,_while_the increase_calculated_with the $T$-expression is delayed and_less_pronounced.

Figure \[fig:drude\_vs\_T-expression\] clearly shows that the drastically different_behavior of reflectivity has_an_impact on carrier and_lattice temperatures as well as_carrier density. The maxima of carrier_density as_well as_carrier and lattice temperatures are all higher when using the Drude_model than when using the $T$-expression._This is most prominent_for carrier_temperature_but also noticeable_for_the final_lattice temperature. The densities calculated using the_Drude model_and the $T$-expression, respectively, deviate at_their maximum but tend_towards_similar values for later times. The_reason is that Auger recombination, as_a three particle process, is_much_stronger_for higher densities.

The significant differences,_especially in temperature, shown in Fig. \[fig:drude\_vs\_T-expression\]_indicate that the_choice of using either the $T$-expression or_the_Drude model to calculate reflectivity and_FCA_coefficient might strongly influence the damage_thresholds_estimated_applying the nTTM.

![\[fig:threshols\_drude\_vs\_T\] (Color online)_Damage thresholds calculated