 single crystal of natural graphite. On another clean substrate hBN was mechanically exfoliated and potential thin hBN was looked for using optical microscope. Using dark field microscope imaging hBN flake with uniform smooth surface and free of bubbles was chosen. hBN, BLG and hBN were picked up sequentially one on top of another and the complete stack (hBN-BLG-hBN) was deposited onto a $n++$ doped Si/SiO$_2$ substrate with 285 nm oxide. The stack was then annealed at 200$^\circ$C in vacuum to get a uniform surface free of bubbles. The electrical contacts were fabricated using electron beam lithography followed by etching the hBN-BLG-hBN stack, and one-dimensional contact was established by thermally evaporating Cr/Au (5nm/70nm)[@wang2013one]. Another step of lithography and thermal deposition was carried out to define the topgate electrode (see supplemental material; SM-Sec.I for details). The optical image of the final device is shown in Fig. 1a. The schematic of the device and the measurement scheme are shown in Fig. 1b. The top hBN thickness $\sim$ 11 nm and bottom hBN thickness $\sim$ 15 nm were measured using atomic force microscope (see SM-Sec.II). The thickness of top hBN was found independently using period of oscillation of the capacitance minima in magnetic field [@yu2013interaction]. The excellent dielectric properties of hBN serves the purpose of using thin gate dielectric for measuring detectable change in total capacitance (C$_t$). All the measurements were carried out in a $^3$He refrigerator with a base temperature $T\sim $ 240 mK.\
For the capacitance measurements we have used the measurement scheme described in our earlier works[@bppaper; @PhysRevB.98.035418] using a home built differential current amplifier with a gain of $10^7$. The capacitance has been measured between the topgate electrode and BLG with a small ac excitation voltage of $\sim$ 10-15 mV at a frequency of $\sim$ 5 kHz with a resolution of $\sim 0.5~fF$. All wires were shielded to reduce the parasitic capacitance. In a parallel plate capacitor made of a normal bulk metal and a two dimensional material like graphene, adding a charge requires electrostatic energy, but also kinetic energy due to the change in chemical potential, thereby contributing to the total capacitance[@luryi1988quantum]. The total measured
single crystal of natural graphite. On another clean substrate hBN was mechanically exfoliate and likely thin hBN was looked for use ocular microscope. Using dark playing field microscope imagination hBN flake with uniform smooth surface and free of bubble was chosen. hBN, BLG and hBN were picked up consecutive one on top of another and the complete stack (hBN - BLG - hBN) was deposited onto a $ n++$ doped Si / SiO$_2 $ substrate with 285 nm oxide. The stack was then annealed at 200$^\circ$C in void to get a uniform surface detached of bubbles. The electrical contact were fabricate using electron balance beam lithography followed by etching the hBN - BLG - hBN stack, and one - dimensional liaison was established by thermally evaporating Cr / Au (5nm/70nm)[@wang2013one ]. Another step of lithography and thermal deposition was carried out to define the topgate electrode (determine supplemental material; SM - Sec. I for details). The optical image of the final device is shown in Fig.   1a. The schematic of the device and the measurement scheme are shown in Fig.   1b. The top hBN thickness $ \sim$ 11 nm and bottom hBN thickness $ \sim$ 15 nm were measured use atomic force microscope (visit SM - Sec. II). The thickness of top hBN was find oneself independently using period of oscillation of the capacitor minima in magnetic battlefield [ @yu2013interaction ]. The excellent dielectric properties of hBN serves the function of using thin gate dielectric for measuring detectable change in total capacitance (C$ _ t$). All the measurements were carried out in a $ ^3$He refrigerator with a base temperature $ T\sim $ 240 mK.\ 
 For the capacitance measurement we have used the measurement outline trace in our earlier works[@bppaper; @PhysRevB.98.035418 ] using a home built differential current amplifier with a amplification of $ 10 ^ 7$. The capacitance has been measured between the topgate electrode and BLG with a small ac excitement voltage of $ \sim$ 10 - 15 mV at a frequency of $ \sim$ 5 kHz with a resoluteness of $ \sim 0.5 ~ fF$. All wires were shielded to abridge the parasitic capacitor. In a parallel plate capacitor made of a normal bulk metal and a two dimensional material like graphene, adding a care requires electrostatic department of energy, but also kinetic energy due to the variety in chemical potential, thereby contributing to the total capacitance[@luryi1988quantum ]. The total measured
 sijgle crystal of natural nraphite. On anotkwr cleen subsfrate hBV was mechanically exfoliatev ane pottutial thin hBN was luoked for using opticel microscope. Usmhg dark field licrmwcope imaging mBN flake whth uniform smmogh surface and free of bubbles was chjsen. hBM, HLG and hBN wete pibkqd ul sequentially one on top of anothsr and uhe complete stack (hBN-BLG-hBN) was deposited ojto w $n++$ doped Si/SiO$_2$ suhstrate wity 285 ni oxide. The sgack was then annealed at 200$^\circ$C in vacuum to get a unkform surface ftzw ov bubbles. Thx elecnrical contacbx were fabricsted using elegtron beqm lithography followxd by etching the hBG-BLG-hBN sdaek, and one-dimensional cintacj was estxvlirhes uy fhermaply evaporatihg Cr/Au (5nm/70nn)[@wang2013one]. Another sttp jd lithography and trewmal deposition was carried out to defite fhe topgate electrode (swe supplemental materlal; SM-Sec.Y for details). The optical image of the final deviwe is rhock kb Vig. 1a. The schematic of the device and the meastdekekt scheme are shjwn in Fig. 1b. Tje jop hBN thickngss $\sim$ 11 nj and bottom hBN tjicknesf $\sim$ 15 nm were meaxured using atomic force mixroscope (see WM-Sec.II). The thicknzss of top hYN was founc independently using pzriod kf oscillatlon of ths capacitance minkma it magnetic field [@yu2013interaceion]. The xxcelkent didlecjric prjperties ov hBN serves the purpose of uditg thin gahe dielectric for measuring detxrtable change it tmtal capccitange (C$_t$). All the mqasurements wete carrieb out kn a $^3$He rerrigeravor with a bwse temperatusg $T\sim $ 240 mK.\
Foc the capwcitqnce measurdoents we have ised the measuremenr scheme described in kur earlier worjs[@bkpqper; @PhysRevB.98.035418] isivg w joke tuilt differantixl zirreng amplifier dith a gain of $10^7$. The capawitahce has been measuteq betweeb the to[gate electroce and BLG with a dmall ac exciyatyon voltage of $\sim$ 10-15 mV at a frsquency ov $\slm$ 5 kHz with w rewolution of $\xim 0.5~fF$. All wires were shielded to reducx the parasitic capacijance. In a parallel pkste capacitpr maqe of a nmrmal bulk metal and a two dimensionak material like graphsne, adging w charge requires electrostatic energy, but also kinetic energy due to the changx yn chemical potrntian, chexeby cogtriuuving to the total capacitance[@luryi1988quantum]. The toval measurad
single crystal of natural graphite. On another hBN mechanically exfoliated potential thin hBN microscope. dark field microscope hBN flake with smooth surface and free of bubbles chosen. hBN, BLG and hBN were picked up sequentially one on top of and the complete stack (hBN-BLG-hBN) was deposited onto a $n++$ doped Si/SiO$_2$ substrate 285 oxide. stack then annealed at 200$^\circ$C in vacuum to get a uniform surface free of bubbles. The electrical were fabricated using electron beam lithography followed by the hBN-BLG-hBN stack, and contact was established by thermally Cr/Au Another step lithography thermal was carried out define the topgate electrode (see supplemental material; SM-Sec.I for details). The optical image of the final device shown in The schematic the and measurement scheme are Fig. 1b. The top hBN thickness and bottom hBN thickness $\sim$ 15 nm were using atomic microscope (see SM-Sec.II). The thickness of hBN was found independently using period of oscillation the capacitance minima in magnetic field [@yu2013interaction]. The excellent dielectric properties of hBN serves the using thin gate dielectric measuring detectable change total (C$_t$). the were carried in a $^3$He refrigerator with a base temperature $T\sim $ 240 For the capacitance measurements we have used the measurement scheme our works[@bppaper; @PhysRevB.98.035418] using home built differential current with gain of $10^7$. The been between and with small ac excitation voltage $\sim$ 10-15 mV at a of $\sim$ 5 kHz 0.5~fF$. All wires were shielded to reduce the capacitance. In a parallel plate capacitor made a normal bulk metal and a two dimensional material like graphene, adding charge requires but also kinetic energy due to the change chemical potential, thereby contributing the total capacitance[@luryi1988quantum]. The total measured
 single crystal of natural graPhite. On anoTher cLeaN suBsTratE hBN Was mechanicallY ExfoLiated and potential thin HBN waS lOOked FOr Using Optical MIcROScoPe. usIng DaRK fIeld mIcrOscope iMaging hBN fLakE wIth uniform smOOtH surface anD frEe of bubbles wAs cHosen. hbN, bLG ANd hBN WerE pickEd up seQUentiaLly one on tOp OF anothER and the COMpLete Stack (hBN-BLG-hBN) was DEpOSited onto a $n++$ dopEd Si/Sio$_2$ sUBsTRAte WitH 285 nm oxide. ThE sTack wAS then anNEaLED At 200$^\cIRc$C in vacuum to Get a uniform SUrfAce freE oF buBBles. ThE elecTrICal Contacts werE fabRicated usIng eleCTron beaM LithogrAphy foLloWed By etCHiNg The HBn-bLG-HbN StaCK, anD one-dimeNsIoNal coNtacT WAS EstaBliShed By theRmally evaporaTinG Cr/AU (5Nm/70nM)[@wang2013One]. AnOtheR sTep of LithogRaphy AnD thermal depositIon wAs carried Out To DefInE the tOPgate eLecTroDe (see suPplemenTAl mAtERIAl; sM-Sec.I for details). ThE oPTIcAl image oF the fiNAl DeVIce is shoWn In FIg. 1a. THE SchemAtic OF tHe device And the MEaSuRement sChEme are ShOwn In FIg. 1b. ThE Top hbN thicKness $\sim$ 11 Nm and BOttom hBN thicknESs $\sim$ 15 nm were meASuRED uSIng aTomIc force micrOscoPE (see sM-SeC.iI). the THicknEss of ToP HBn Was found independentLy Using pEriod Of oscillation Of the capacITANce minimA in mAGnETic field [@yu2013inteRactiOn]. The excelLEnt dieleCtric PropertiEs of hBN seRVEs the purPosE of UsiNg tHIN gAte dielectric FOR meaSuRing detEctAble chaNge In tOtaL caPaCitance (C$_t$). all the meAsUrEmEnTs wEre caRRied out iN a $^3$he rEfRigEratoR With a bAse teMperAtUrE $t\siM $ 240 mK.\
For tHE cAPAcitAnCe MeasUreMeNts we Have USed The measUrement scHemE DescRiBeD in our eArlier works[@bpPaPer; @PhysRevb.98.035418] uSinG a home BUIlt diffeRential current amplifier WIth a gaiN of $10^7$. the caPaciTance has bEen MeasurEd bETween tHe topgAte elEcTroDE And BLg WItH a sMaLl ac excitaTIOn vOltagE oF $\sim$ 10-15 MV at a frEquency of $\sim$ 5 kHz witH A reSolution of $\sim 0.5~FF$. ALl wiRES wEre SHiELdeD tO RedUCE the parasitic caPacitance. IN a PArAllel plate CApaCiTor made Of a normAl bulK Metal anD a two dimeNsional maTeRial LIKe gRaphene, addIng a charGe requireS ElectROsTatic EneRgy, but AlSo kInetiC energY Due To the Change In ChemicAl potEnTial, therEby contributing to the totAl capaCitanCe[@lUryi1988quantUm]. THE toTal measurEd
 single crystal of natural  graphite.  On a not her  c lean  sub strate hBN was mech anically exfoliated an d pot en t ialt hi n hBN  was lo o ke d for  u si ngop t ic al mi cro scope.Using dark  fi el d microscope im aging hBNfla ke with unif orm  smoot hsur f ace a ndfreeof bub b les wa s chosen.  h B N, BLG and hBN w er e pi cked up sequentia l ly one on top ofanothe ra nd t hecom plete stac k(hBN- B LG-hBN) wa s d epo s ited onto a $ n++$ dopedS i/S iO$_2$  s ubs t rate w ith 2 85 nmoxide. Thestac k was the n anne a led at2 00$^\ci rc$C i n v acu um t o  g et  aun i for m  s urf a cefree ofbu bb les.Thee l e c tric alcont actswere fabricat edusin g  el ectro n bea m li th ograp hy fol lowed  b y etching the h BN-B LG-hBN st ack ,and  o ne-di m ension alcon tact wa s estab l ish ed b y  t hermally evaporati ng C r/ Au (5nm/ 70nm)[ @ wa ng 2 013one].  A not hers t ep of  lit h og raphy an d ther m al  d epositi on  was c ar rie d o ut to defi ne the  topgate  elec t rode (see supp l emental mater i al ; SM - Sec. I f or details) . Th e  opt ical im age of th e fin al de v ice is shown in Fig .1a. Th e sch ematic of the  device an d t he measu reme n ts cheme are show n inFig. 1b. T h e top hB N thi ckness $ \sim$ 11n m  and bot tom  hB N t hic k n es s $\sim$ 15 n m were  m easured  us ing ato mic  fo rce  mi cr oscope (s ee SM-Se c. II ).  T hethick n ess of t op  hB Nwas  foun d  indep enden tlyus in g  pe riod of os c i llat io nof t heca pacit ance min ima inmagneticfie l d [@ yu 20 13inter action]. Theex cellent di el ect ric pr o p erties o f hBN serves the purpos e  of usi ngthingate  dielectr icfor me asu r ing de tectab le ch an gei n  tota l ca pac it ance (C$_t $ ) . A ll th emeas urement s were carried out ina $^3$He refr ige rato r wi tha  b a sete m per a t ure $T\sim $ 24 0 mK.\
For  t h ecapacitanc e  me as urement s we ha ve us e d the m easuremen t schemede scri b e d i n our earl ier work s[@bppape r ; @Ph y sR evB.9 8.0 35418]  u sin g a h ome bu i ltdiffe rentia lcurren t amp li fier wit h a gain of $10^7$. The  capac itanc e h as been m eas u red  betweenthetopgate el ect rod e and  BL G  with  a s m al l a c  exci tati o n voltage of  $\ s i m$  10-15 mV a t a  fr equen cyo f $\si m$ 5  kHz with a resol u tion of $\sim0.5~ f F $.All wire swere shieldedtore d u ce the p ar asitic capa citance.  I n  a pa rallel  plate  capaci t o rm ade of  a n orm al bulk m eta la nd a tw odi m ension al m at eriallike g r aphe n e , adding a charg e req u i res e l ect rosta ti c energ y , bu t also kin etic energy  due t o th e cha nge inch emical  po te ntial, the r eby contr ibuti ng to t he  tot alcapaci tanc e [ @lury i198 8q uan tum]. The t ot a lme a sur ed
 single_crystal of_natural graphite. On another_clean substrate_hBN_was mechanically_exfoliated_and potential thin_hBN was looked_for using optical microscope._Using dark field_microscope_imaging hBN flake with uniform smooth surface and free of bubbles was chosen. hBN,_BLG_and hBN_were_picked_up sequentially one on top_of another and the complete_stack (hBN-BLG-hBN)_was deposited onto a $n++$ doped Si/SiO$_2$ substrate_with_285 nm oxide._The stack was then annealed at 200$^\circ$C in vacuum_to get a uniform surface free_of bubbles. The_electrical_contacts_were fabricated using electron_beam lithography followed by etching the_hBN-BLG-hBN stack, and one-dimensional contact was_established by thermally evaporating Cr/Au (5nm/70nm)[@wang2013one]. Another_step of lithography and thermal deposition_was carried out to define_the topgate_electrode (see supplemental material; SM-Sec.I_for details). The_optical image_of the final_device is shown in Fig. 1a. The_schematic of the_device and the measurement scheme are_shown_in Fig. 1b. The_top_hBN_thickness $\sim$_11 nm and_bottom_hBN thickness_$\sim$_15 nm were measured using atomic_force_microscope (see SM-Sec.II). The thickness of top_hBN was found independently_using_period of oscillation of_the capacitance minima in magnetic_field [@yu2013interaction]. The excellent dielectric properties_of hBN_serves the_purpose of using thin gate dielectric for measuring detectable change in_total capacitance (C$_t$). All the measurements_were carried out in_a $^3$He_refrigerator_with a base_temperature_$T\sim $_240 mK.\
For the capacitance measurements we have_used the_measurement scheme described in our earlier_works[@bppaper; @PhysRevB.98.035418] using a_home_built differential current amplifier with a_gain of $10^7$. The capacitance has_been measured between the topgate_electrode_and_BLG with a small ac_excitation voltage of $\sim$ 10-15 mV_at a frequency_of $\sim$ 5 kHz with a resolution_of_$\sim 0.5~fF$. All wires were shielded_to_reduce the parasitic capacitance. In a_parallel_plate_capacitor made of a normal_bulk metal and a two dimensional_material like graphene, adding a charge requires electrostatic energy,_but also kinetic_energy due to the change_in_chemical_potential, thereby contributing to the total capacitance[@luryi1988quantum]. The total measured