alpha]. Both dots show excited states at $\Delta \epsilon^* \approx 120~\mu$eV. In Fig. \[properties\](a) the charging diagram of the coupled dot is plotted in a linear grayscale representation in the weak coupling regime ($G_{c} \approx 0.08~e^2/h$). In linear transport, only two ground states participate, e.g., the ground state $E_l$ in the left dot and $E_r$ in the right dot, as schematically shown in Fig. \[properties\](b) [@simplepicture]. The detuning between the two ground states is $E_{lr} = - (E_l-E_r)$. The finite tunnel coupling $t$ between these two states induces a bonding ($E_{-}$) and an anti-bonding ($E_{+}$) molecular state, as shown in Fig. \[properties\](b). The energetic offset between these states is $E_{+}-E_{-} = \sqrt{E_{lr}^2+4t^2}$ [@stafford-prl96; @stoof-prb96]. For weak tunnel coupling and non-zero detuning ($E_l \not = E_r$) it follows that a bonding electron is localized in one of the dots (as shown in Fig. \[properties\](b)). At zero detuning ($E_l = E_r$), the bonding electron tunnels back and forth between the dots at a Rabi frequency of $\Omega_R = t/h$. The discrete conductance peaks in Fig. \[properties\](a) are main peaks (M) resulting from resonant tunneling through the molecular states with $E_{lr}  = 0$.

Within the diamond shaped regions (Fig. \[properties\](a)) enclosed by dashed lines Coulomb blockade prevails and the number of electrons in the dots is well defined, corresponding to the charge configuration ($N_l$, $N_r$). In the direction marked by arrow [**A**]{} in Fig. \[properties\](a), the detuning $E_{lr}$ is kept constant, while the average of the ground state energies $\bar E = (E_{l}+E_{r})/2$ is increased relative to the chemical potentials ($\mu_{d}$, $\mu_{s}$) of the contacts. In direction of [**B**]{}, $\bar E$ is fixed but $E_{lr}$ is varied. We find that the broadening in both directions
alpha ]. Both dots show excited states at $ \Delta \epsilon^ * \approx 120~\mu$eV. In Fig.   \[properties\](a) the charge diagram of the conjugate dot is plotted in a analogue grayscale representation in the decrepit coupling regimen ($ G_{c } \approx 0.08 ~ e^2 / h$). In analogue transport, only two ground states participate, for example, the ground state $ E_l$ in the left dot and $ E_r$ in the correct dot, as schematically testify in Fig.   \[properties\](b)   [ @simplepicture ]. The detuning between the two ground states is $ E_{lr } = - (E_l - E_r)$. The finite burrow coupling $ t$ between these two states induces a bonding ($ E_{-}$) and an anti - bonding ($ E_{+}$) molecular country, as shown in Fig.   \[properties\](b). The energetic offset between these state of matter is $ E_{+}-E_{- } = \sqrt{E_{lr}^2 + 4t^2}$   [ @stafford - prl96; @stoof - prb96 ]. For weak burrow coupling and non - zero detuning ($ E_l \not = E_r$) it follow that a bonding electron is localized in one of the dots (as prove in Fig.   \[properties\](b) ). At zero detuning ($ E_l = E_r$), the bonding electron tunnels back and forth between the dots at a Rabi frequency of $ \Omega_R = t / h$. The discrete conductance peaks in Fig.   \[properties\](a) are main bill (M) resulting from resonant tunneling through the molecular states with $ E_{lr }   = 0$. 

 Within the diamond shaped regions (Fig.   \[properties\](a) ) enclosed by dashed lines Coulomb blockade prevails and the act of electrons in the dots is well define, represent to the charge configuration ($ N_l$, $ N_r$). In the management notice by arrow [ * * A * * ] { } in Fig.   \[properties\](a), the detuning $ E_{lr}$ is kept changeless, while the average of the ground state energies $ \bar E = (E_{l}+E_{r})/2 $ is increased relative to the chemical electric potential ($ \mu_{d}$, $ \mu_{s}$) of the contacts. In direction of [ * * B * * ] { }, $ \bar E$ is fixed but $ E_{lr}$ is varied. We find oneself that the widening in both directions
alpja]. Both dots show excitea states at $\Delja \epsilmn^* \appdox 120~\mu$eV. In Fig. \[properties\](a) the chargmng eiagrqm of the coupled dot ks plottef in a luneac grayscale reprxaentation in fme weck coupling regike ($G_{c} \apprmx 0.08~e^2/h$). In lineas grcnsport, only two ground states partisipate, r.g., the ground stwte $T_l$ yn tgv oeft dot and $E_r$ in the right sot, as vchematically shown in Fig. \[properties\](b) [@silpleoicture]. The detunijg between jge eqo ground stxtes is $E_{lg} = - (E_l-E_r)$. Thg finite tunnel coupling $t$ betwedn thzse two stajzw ijguces a bonving ($E_{-}$) and an anti-npnding ($E_{+}$) molevular state, as shmwn in Fig. \[properties\](b). Thx energetic offset bgtween theve states is $E_{+}-E_{-} = \sqet{W_{lr}^2+4t^2}$ [@sjaffosd-pru96; @stuof-krb96]. Fkr wean tnnnel coupljng and non-zero detuning ($E_l \nou = Q_g$) it follows fhat a bjnding electron is localized in one of uhe dkts (as shown in Fig. \[propwrties\](b)). At zero detunlng ($E_l = E_w$), the bonding electron tunnels back and forth betfeen vhd ditf qt a Rabi frequency of $\Omega_R = t/h$. The discrete skncubtance peaks in Flg. \[properties\](a) are kaln keaks (M) resultkng from desonant tunneling througr the moleculaw ststes with $E_{lr}  = 0$.

Within the eiamond shapvd rwgions (Fig. \[propertizs\](a)) enclosed by cashec lines Coulomb blockadz prevzils and thf number kw electrons in tfe cods is well defined, correspjnding to the charge congiguraeion ($N_l$, $N_r$). In tma direction marked by atrow [**A**]{} in Fig. \[prooerties\](a), the detuning $E_{lr}$ is ke'v constant, whola tve averaye of bhe ground statq energies $\bar E = (E_{l}+E_{x})/2$ is ivcreased rvlative tm the chemisal potentialv ($\mu_{d}$, $\mu_{s}$) of vhe contasts. Un durectiov of [**B**]{}, $\bar E$ is fixed bun $T_{lr}$ is varued. We find that tme bruzdening in both ditwctions
alpha]. Both dots show excited states at \approx In Fig. the charging diagram plotted a linear grayscale in the weak regime ($G_{c} \approx 0.08~e^2/h$). In linear only two ground states participate, e.g., the ground state $E_l$ in the left and $E_r$ in the right dot, as schematically shown in Fig. \[properties\](b) [@simplepicture]. detuning the ground is $E_{lr} = - (E_l-E_r)$. The finite tunnel coupling $t$ between these two states induces a ($E_{-}$) and an anti-bonding ($E_{+}$) molecular state, as in Fig. \[properties\](b). The offset between these states is = [@stafford-prl96; @stoof-prb96]. weak coupling non-zero detuning ($E_l = E_r$) it follows that a bonding electron is localized in one of the dots (as shown Fig. \[properties\](b)). detuning ($E_l E_r$), bonding tunnels back and the dots at a Rabi frequency t/h$. The discrete conductance peaks in Fig. \[properties\](a) main peaks resulting from resonant tunneling through the states with $E_{lr} = 0$. Within the diamond regions (Fig. \[properties\](a)) enclosed by dashed lines Coulomb blockade prevails and the number of electrons dots is well defined, to the charge ($N_l$, In direction by arrow in Fig. \[properties\](a), the detuning $E_{lr}$ is kept constant, while the of the ground state energies $\bar E = (E_{l}+E_{r})/2$ is to chemical potentials ($\mu_{d}$, of the contacts. In of $\bar E$ is fixed is We broadening both
alpha]. Both dots show excited sTates at $\DelTa \epsIloN^* \apPrOx 120~\mu$EV. In fig. \[properties\](a) THe chArging diagram of the coupLed doT iS PlotTEd In a liNear graYScALE rePrEsEntAtIOn In the WeaK coupliNg regime ($G_{c} \AppRoX 0.08~e^2/h$). In linear tRAnSport, only tWo gRound states pArtIcipatE, e.G., thE GrounD stAte $E_l$ In the lEFt dot aNd $E_r$ in the RiGHt dot, aS SchematICAlLy shOwn in Fig. \[propertieS\](B) [@sIMplepicture]. The DetuniNg BEtWEEn tHe tWo ground stAtEs is $E_{LR} = - (E_l-E_r)$. ThE FiNITE tuNNel coupling $t$ bEtween these TWo sTates iNdUceS A bondiNg ($E_{-}$) anD aN AntI-bonding ($E_{+}$) moLecuLar state, aS shown IN Fig. \[proPErties\](b). the eneRgeTic OffsET bEtWeeN tHEse STaTes IS $E_{+}-E_{-} = \Sqrt{E_{lr}^2+4t^2}$ [@StAfFord-pRl96; @stOOF-PRb96]. FoR weAk tuNnel cOupling and non-ZerO detUNinG ($E_l \noT = E_r$) it FollOwS that A bondiNg eleCtRon is localized iN one Of the dots (As sHoWn iN FIg. \[proPErties\](B)). At ZerO detuniNg ($E_l = E_r$), tHE boNdING ElEctron tunnels back aNd FORtH between The dotS At A RABi frequeNcY of $\omegA_r = T/h$. The DiscREtE conductAnce peAKs In fig. \[propErTies\](a) aRe MaiN peAks (M) rESultIng froM resonanT tunnELing through the MOlecular stateS WiTH $e_{lR}  = 0$.

withIn tHe diamond shAped REgioNs (FiG. \[PrOpeRTies\](a)) EncloSeD By DAshed lines Coulomb blOcKade prEvailS and the number Of electronS IN The dots iS welL DeFIned, correspondIng to The charge cONfiguratIon ($N_l$, $n_r$). In the dIrection mARKed by arrOw [**A**]{} In FIg. \[pRopERTiEs\](a), the detuninG $e_{Lr}$ is KePt constAnt, While thE avEraGe oF thE gRound statE energieS $\bAr e = (E_{L}+E_{R})/2$ is IncreASed relatIvE to ThE chEmicaL PotentIals ($\mU_{d}$, $\mu_{S}$) oF tHE coNtacts. IN DiRECtioN oF [**B**]{}, $\Bar E$ Is fIxEd but $e_{lr}$ iS VarIed. We fiNd that the BroADeniNg In Both dirEctions
alpha]. Both dots show exc ited state s at$\D elt a\eps ilon ^* \approx 120 ~ \mu$ eV. In Fig. \[properti es\]( a) thec ha rging  diagra m  o f the  c ou ple dd ot  is p lot ted ina linear g ray sc ale represen t at ion in the  we ak couplingreg ime ($ G_ {c} \appr ox0.08~ e^2/h$ ) . In l inear tra ns p ort, o n ly twog r ou nd s tates participate ,  e . g., the ground  state  $ E _l $ inthe  left dotan d $E_ r $ in th e  r i g h t d o t, as schemat ically show n  in  Fig.\[ pro p erties \](b)  [ @ sim plepicture] . Th e detunin g betw e en thet wo grou nd sta tes  is  $E_ { lr }= -  ( E _l- E _r )$. The  finitetu nn el co upli n g $ t$ b etw eenthese  two states i ndu cesa  bo nding  ($E_ {-}$ )and a n anti -bond in g ($E_{+}$) mol ecul ar state,  as  s how nin Fi g . \[pr ope rti es\](b) . The e n erg et i c of fset between these  s t a te s is $E_ {+}-E_ { -}  = \sqrt{E_ {l r}^ 2+4t ^ 2 }$ [@ staf f or d-prl96;  @stoo f -p rb 96]. Fo rweak t un nel  co uplin g  and  non-z ero detu ning( $E_l \not = E_ r $) it follows th a t  a bond ing  electron i s lo c aliz ed i n  o neo f the  dots  ( a ss hown in Fig. \[prop er ties\] (b)).  At zero detu ning ($E_l = E_r$), t he b o nd i ng electron tu nnels  back andf orth bet weenthe dots  at a Rab i frequenc y o f $ \Om ega _ R  =  t/h$. The di s c rete  c onducta nce  peaksinFig . \ [pr op erties\]( a) are m ai npe ak s ( M) re s ulting f ro m r es ona nt tu n neling  thro ughth em ole cular s t at e s  wit h$E _{lr } =0$.
With i n t he diam ond shape d r e gion s(F ig. \[p roperties\](a ))  enclosedby  da shed l i n es Coulo mb blockade prevails an d  the nu mbe r ofelec trons inthe  dotsisw ell de fined,  corr es pon d i ng to t he  ch ar ge configu r a tio n ($N _l $, $ N_r$).In the direction m a rke d by arrow [* *A* *]{} i nFig .  \ [ pro pe r tie s \ ](a), the detun ing $E_{lr }$ is  kept cons t ant ,while t he aver age o f  the gr ound stat e energie s$\ba r E =  (E_{l}+E_ {r})/2$is increa s ed re l at ive t o t he che mi cal  pote ntials ($\ mu_{d }$, $\ mu _{s}$)  of t he  contact s. In direction of [**B **]{},  $\ba r E $ is fixe d b u t $ E_{lr}$ i s va ried. We f ind  th at th e b r oaden ingi nbot h  dire ctio n s
alpha]. Both_dots show_excited states at $\Delta_\epsilon^* \approx_120~\mu$eV._In Fig. \[properties\](a)_the_charging diagram of_the coupled dot_is plotted in a_linear grayscale representation_in_the weak coupling regime ($G_{c} \approx 0.08~e^2/h$). In linear transport, only two ground states_participate,_e.g., the_ground_state_$E_l$ in the left dot_and $E_r$ in the right_dot, as_schematically shown in Fig. \[properties\](b) [@simplepicture]. The detuning between the_two_ground states is_$E_{lr} = - (E_l-E_r)$. The finite tunnel coupling $t$_between these two states induces a_bonding ($E_{-}$) and_an_anti-bonding_($E_{+}$) molecular state, as_shown in Fig. \[properties\](b). The energetic offset_between these states is $E_{+}-E_{-} =_\sqrt{E_{lr}^2+4t^2}$ [@stafford-prl96; @stoof-prb96]. For weak tunnel coupling and_non-zero detuning ($E_l \not = E_r$)_it follows that a bonding_electron is_localized in one of the_dots (as shown_in Fig. \[properties\](b))._At zero detuning_($E_l = E_r$), the bonding electron_tunnels back and_forth between the dots at a_Rabi_frequency of $\Omega_R_=_t/h$._The discrete_conductance peaks in_Fig. \[properties\](a)_are main_peaks_(M) resulting from resonant tunneling through_the_molecular states with $E_{lr}  = 0$.

Within_the diamond shaped regions_(Fig. \[properties\](a))_enclosed by dashed lines_Coulomb blockade prevails and the_number of electrons in the dots_is well_defined, corresponding_to the charge configuration ($N_l$, $N_r$). In the direction marked by_arrow [**A**]{} in Fig. \[properties\](a), the detuning_$E_{lr}$ is kept constant,_while the_average_of the ground_state_energies $\bar_E = (E_{l}+E_{r})/2$ is increased relative to_the chemical_potentials ($\mu_{d}$, $\mu_{s}$) of the contacts._In direction of [**B**]{},_$\bar_E$ is fixed but $E_{lr}$ is_varied. We find that the broadening_in both directions