s}}$ was suggested to explain the drop of the effective electron and hole densities without a change of Fermi surface volume. However, our observation of the simultaneous increase of the hole density and decrease of the electron density cannot be explained only by the strongly anisotropic carrier scattering. The present THz magneto-optical spectroscopy unambiguously reveals the temperature dependence of the electron and hole densities, which suggests the Fermi surface modification in the nematic phase. The reduction of carrier density below $T_{\mathrm{s}}$ has also been observed by conventional far-infrared optical reflectivity measurement[@Nakajima:2017cw]. By using the scattering time and effective mass, we further evaluate the mobility $\mu=e\tau/m^*$ for each carrier as shown in Fig. 4(c). The mobility of the hole increases at lower temperature as a result of the increase of the scattering time. The temperature dependence of the dc Hall coefficient described as $R_{\mathrm{H}}\approx \sigma_{xy}(\omega=0)/(\sigma_{xx}(\omega=0)^2 B)$ is plotted (red circles) in Fig. 4(d). It shows an excellent agreement with the Hall coefficient obtained by dc magneto-transport measurement (grey solid curve), indicating that the dc transport and the THz response are described by the common physical origin of the charge carrier dynamics. Accordingly, the peculiar temperature dependence of the Hall coefficient that increases monotonically toward the low temperature is dominantly attributed to the increase of hole scattering time.

![Temperature dependence of (a) scattering times, (b) carrier densities, (c) mobilities of the electron and hole of FeSe thin film given by THz magneto-spectroscopy. The structural transition temperature Ts is indicated by arrows. (d) Hall coefficient of FeSe thin film as a function of temperature, obtained by THz magneto-spectroscopy (red circles) and dc transport measurement (grey line).](Fig4.pdf){width="\columnwidth"}

In summary, we performed THz magneto-optical spectroscopy to investigate the charge carrier dynamics in FeSe. The obtained diagonal and off-diagonal conductivity spectra are well described by two-carrier Drude model, from which the carrier densities, scattering times and effective masses of electron and hole carriers are determined in a wide temperature range. We found the significant temperature dependence of the carrier densities of electrons and holes below $T_{\mathrm{s}}$, which is most likely attributed to the band structure modification at the structural phase
s}}$ was suggested to explain the drop of the effective electron and hole densities without a variety of Fermi open volume. However, our observation of the coincident increase of the trap density and decrease of the electron density cannot be explain only by the strongly anisotropic aircraft carrier scattering. The present THz magneto - optical spectroscopy uniquely reveals the temperature dependence of the electron and hole densities, which indicate the Fermi surface alteration in the nematic phase. The reduction of carrier concentration below $ T_{\mathrm{s}}$ has also been observed by conventional far - infrared ocular reflectivity measurement[@Nakajima:2017cw ]. By using the break up time and effective batch, we further evaluate the mobility $ \mu = e\tau / m^*$ for each carrier as shown in Fig.   4(c). The mobility of the hole increase at lower temperature as a result of the increase of the scattering time. The temperature dependence of the dc Hall coefficient described as $ R_{\mathrm{H}}\approx \sigma_{xy}(\omega=0)/(\sigma_{xx}(\omega=0)^2 B)$ is plotted (red circles) in Fig. 4(d). It shows an excellent agreement with the Hall coefficient obtained by dc magneto - transport measurement (grey solid curve), indicating that the dc transport and the THz reaction are described by the common forcible beginning of the cathexis carrier dynamics. Accordingly, the peculiar temperature dependence of the Hall coefficient that increases monotonically toward the low temperature is dominantly impute to the increase of hole scattering time. 

! [ Temperature dependence of (a) scattering time, (b) carrier densities, (c) mobilities of the electron and hole of FeSe slender film given by THz magneto - spectroscopy. The structural transition temperature Ts is indicated by arrow. (d) Hall coefficient of FeSe thin film as a function of temperature, prevail by THz magneto - spectroscopy (red circles) and dc transport measurement (grey line).](Fig4.pdf){width="\columnwidth " } 

 In summary, we performed THz magneto - ocular spectroscopy to investigate the charge carrier wave dynamics in FeSe. The obtained aslant and off - diagonal conductivity spectra are well describe by two - carrier Drude mannequin, from which the carrier densities, scattering times and effective masses of electron and trap carriers are determined in a wide temperature range. We found the significant temperature dependence of the carrier densities of electron and holes below $ T_{\mathrm{s}}$, which is most probably attributed to the band structure change at the structural phase
s}}$ wws suggested to explain uhe drop of the eydectivx electdon and fole densities without a chaige if Feemi surface volume. Howdver, our lbservatuon id the simultaneous increzde oy vhe hole densiti and decreave of the elecdrun density cannot be explained only br the syrlngly anisotrokic cswried scattering. The present THz magnefo-opticel spectroscopy unambiguously reveals the temoerature dependencf of the elgdtrjb and hole ddnsities, which suggesta the Fermi surface modificatiov in che nematic pyasf. The reductmon of carrier density belmw $T_{\matnrm{s}}$ has also neen mbswrved by conventional far-infrared opticwl reflecdirity measurement[@Nakajumq:2017cw]. Bi usitg tfw szatuermng time wnd effective mass, we fuether evaluate the kofpkity $\mu=e\tau/m^*$ for ewcr carrier as shown in Fig. 4(c). The mobility of the hole increases at oower temperature as w result jf the increase of the scattering time. The temperdture aeptneence if the dc Hall coefficient described as $R_{\mathrm{R}}\zpkroq \sigma_{xy}(\omega=0)/(\sigia_{xx}(\omega=0)^2 B)$ id ljotted (red citcles) iu Fjg. 4(d). It shows an edcellenj agrewment witr thr Hall coefficient obtained by dc magneno-trqnsport measuremenc (grey solid curfe), incicating that the dc trcnsporf and the TJz responad are described cy nhe wommon physical origin of ehe chargx carxier dynxmicx. Accowdingly, thf pecmniar temperature dfpendgnce ox the Hall coefficient that increases monotonically towsrg tve low tzmperabure is dominanely attributed to the incrdase of home scatvering time.

![Tqmperature de[gndence of (a) vcatterigg tumes, (b) carrkdr densities, (c) mobilitivs of rhe electron and hple kf FeSe thin fiom tiven by THz mabnego-s[ebtrpssmpy. The struwturxl gtansigion temperctjre Ys is indicated by asrowa. (d) Hall coefficiemt of FeSe thin fijm as a functoon of temperature, obtamned bb THz kaggeto-spectroscopy (red circles) ahd dc trajspjrt measuremqnt (nrey line).](Fig4.pdy){width="\columnwidth"}

In summary, we performed THz magneto-opticao spectroscopy to iuvtstigate the rharge carrier gynamics in FeSe. The obtained diagonak and off-diagonal consuctivhty soectra are well described by two-carrier Drude model, from which the carriee densmtyes, scatterjng yimes aud zffectide mesres of electron snd hole carriers are determinev in a wida cemperature range. We found thr rignificant tgmperature dependence of tge carrirr densities of electrons and hples below $T_{\mathrm{s}}$, whicm is most likemy attgjbnted to the band stricture modidicatiob at the structurxl lhwse
s}}$ was suggested to explain the drop effective and hole without a change our of the simultaneous of the hole and decrease of the electron density be explained only by the strongly anisotropic carrier scattering. The present THz magneto-optical unambiguously reveals the temperature dependence of the electron and hole densities, which suggests Fermi modification the phase. The reduction of carrier density below $T_{\mathrm{s}}$ has also been observed by conventional far-infrared optical measurement[@Nakajima:2017cw]. By using the scattering time and effective we further evaluate the $\mu=e\tau/m^*$ for each carrier as in 4(c). The of hole at lower temperature a result of the increase of the scattering time. The temperature dependence of the dc Hall coefficient as $R_{\mathrm{H}}\approx is plotted circles) Fig. It shows an with the Hall coefficient obtained by (grey solid curve), indicating that the dc transport the THz are described by the common physical of the charge carrier dynamics. Accordingly, the peculiar dependence of the Hall coefficient that increases monotonically toward the low temperature is dominantly attributed increase of hole scattering ![Temperature dependence of scattering (b) densities, mobilities of electron and hole of FeSe thin film given by THz magneto-spectroscopy. structural transition temperature Ts is indicated by arrows. (d) Hall FeSe film as a of temperature, obtained by magneto-spectroscopy circles) and dc transport line).](Fig4.pdf){width="\columnwidth"} summary, magneto-optical to the charge carrier dynamics FeSe. The obtained diagonal and conductivity spectra are well from which the carrier densities, scattering times and masses of electron and hole carriers are in a wide temperature range. We found the significant temperature dependence of carrier densities and holes below $T_{\mathrm{s}}$, which is most likely to the band structure at the structural phase
s}}$ was suggested to explain the Drop of the eFfectIve EleCtRon aNd hoLe densities witHOut a Change of Fermi surface voLume. HOwEVer, oUR oBservAtion of THe SIMulTaNeOus InCReAse of The Hole denSity and decReaSe Of the electroN DeNsity cannoT be Explained onlY by The strOnGly ANisotRopIc carRier scATterinG. The preseNt thz magnETo-opticAL SpEctrOscopy unambiguousLY rEVeals the temperAture dEpENdENCe oF thE electron aNd Hole dENsities, WHiCH SUggESts the Fermi suRface modifiCAtiOn in thE nEmaTIc phasE. The rEdUCtiOn of carrier DensIty below $T_{\Mathrm{S}}$ Has also BEen obseRved by ConVenTionAL fAr-InfRaREd oPTiCal REflEctivity MeAsUremeNt[@NaKAJIMa:2017cw]. by uSing The scAttering time aNd eFfecTIve Mass, wE furtHer eVaLuate The mobIlity $\Mu=E\tau/m^*$ for each carRier As shown in fig. 4(C). THe mObIlity OF the hoLe iNcrEases at Lower teMPerAtURE As A result of the increaSe OF ThE scatterIng timE. thE tEMperaturE dEpeNdenCE Of the Dc HaLL cOefficieNt descRIbEd As $R_{\mathRm{h}}\approX \sIgmA_{xy}(\Omega=0)/(\SIgma_{Xx}(\omegA=0)^2 B)$ is plotTed (reD Circles) in Fig. 4(d). IT Shows an excellENt AGReEMent WitH the Hall coeFficIEnt oBtaiNEd By dC MagneTo-traNsPOrT Measurement (grey soliD cUrve), inDicatIng that the dc tRansport anD THE THz respOnse ARe DEscribed by the cOmmon Physical orIGin of the ChargE carrier Dynamics. ACCOrdingly, The PecUliAr tEMPeRature dependeNCE of tHe hall coeFfiCient thAt iNcrEasEs mOnOtonicallY toward tHe LoW tEmPerAture IS dominanTlY atTrIbuTed to THe incrEase oF holE sCaTTerIng time.

![tEmPERatuRe DePendEncE oF (a) scaTterINg tImes, (b) caRrier densItiES, (c) moBiLiTies of tHe electron and HoLe of FeSe thIn FilM given BY tHz magneTo-spectroscopy. The structURal tranSitIon teMperAture Ts is IndIcated By aRRows. (d) HAll coeFficiEnT of fEse thiN FIlM as A fUnction of tEMPerAture, ObTainEd by THz Magneto-spectroscopY (Red Circles) and dc tRanSporT MEaSurEMeNT (grEy LIne).](fIG4.pdf){width="\columnWidth"}

In sumMaRY, wE performed thz mAgNeto-optIcal speCtrosCOpy to inVestigate The charge CaRrieR DYnaMics in FeSe. the obtaiNed diagonAL and oFF-dIagonAl cOnductIvIty SpectRa are wELl dEscriBed by tWo-CarrieR DrudE mOdel, from Which the carrier densitieS, scattEring TimEs and effeCtiVE maSses of eleCtroN and hole caRriErs Are deTerMIned iN a wiDE tEmpERaturE ranGE. We found tHE sIgnIFIcAnt temperatURE DepEndenCe oF The carRier Densities of electrONs and holes beloW $T_{\maTHRm{s}}$, WhiCH is mOsT likely attribuTed To THE band strUcTure modificAtion at tHe STructUral phAse
s}}$ was suggested to expl ain the dr op of  th e e ff ecti ve e lectron and ho l e de nsities without a chan ge of  F e rmis ur facevolume. Ho w e ver ,ou r o bs e rv ation  of  the si multaneous  in cr ease of theh ol e densityand  decrease of  th e elec tr ond ensit y c annot  be ex p lained  only byth e  stron g ly anis o t ro piccarrier scatterin g .T he present THz  magne to - op t i cal  sp ectroscopy  u nambi g uouslyr ev e a l s t h e temperature  dependence ofthe el ec tro n  and h ole d en s iti es, which s ugge sts the F ermi s u rface m o dificat ion in  th e n emat i cph ase .T her ed uct i onof carri er  d ensit y be l o w $T_{ \ma thrm {s}}$  has also bee n o bser v edby co nvent iona lfar-i nfrare d opt ic al reflectivity  mea surement[ @Na ka jim a: 2017c w ]. Byusi ngthe sca ttering tim ea n d  e ffective mass, wefu r t he r evalua te the mo bi l ity $\mu =e \ta u/m^ * $  foreach ca rrier as  shown in  F ig. 4(c ).  The m ob ili tyof th e  hol e incr eases at  lowe r  temperature a s  a result oft he i nc r ease  of  the scatte ring time . Th e  t emp e ratur e dep en d en c e of the dc Hall co ef ficien t des cribed as $R_ {\mathrm{H } } \ approx \ sigm a _{ x y}(\omega=0)/( \sigm a_{xx}(\om e ga=0)^2B)$ i s plotte d (red ci r c les) inFig . 4 (d) . I t sh ows an excell e n t ag re ement w ith  the Ha llcoe ffi cie nt  obtained  by dc m ag ne to -t ran sport measurem en t ( gr eysolid curve) , ind icat in gt hat  the dc tr a n spor tan d th e T Hz  resp onse are  descri bed by th e c o mmon  p hy sical o rigin of thech arge carri er  dy namics . Accordin gly, the peculiar tempe r ature d epe ndenc e of  the Hall  co effici ent that i ncreas es mo no ton i c allyt o wa rdth e low temp e r atu re is  d omin antly a ttributed to the i n cre ase of hole s cat teri n g  t ime . 
! [Te mp e rat u r e dependence of  (a) scatt er i ng  times, (b )  ca rr ier den sities,  (c)m obiliti es of the  electron  a nd h o l e o f FeSe thi n film g iven by T H z mag n et o-spe ctr oscopy .The  stru ctural tra nsiti on tem pe rature  Ts i sindicate d by arrows. (d) Hall c oeffic ientofFeSe thin  fi l m a s a funct ionof tempera tur e,obtai ned by TH z ma g ne to- s pectr osco p y (red ci r cl es) a nd  dc transpo r t mea surem ent (greyline ).](Fig4.pdf){wid t h="\columnwidt h"}I n s umm a ry,we  performed THz  ma gn e t o-optica lspectroscop y to inv es t igate  the c hargecarrier d yn a mics i n Fe Se.  The obta ine dd iagonal  a nd off-di agon al  condu ctivit y  spe c t ra are well desc ribed b y two - car rierDr ude mod e l, f rom whichthe carrier  densi ties , sca ttering  t imes a ndef fective ma s ses of el ectro n and h ol e ca rri ers ar e de t e rmine d in  a  wi de temper a t ur e  r an g e.We f oundth e si gnificant temperat ure depende nc e o f the ca r ri e r  densities  of  elec t r ons and ho l es b e lo w  $T_{ \mathr m{s}}$ , which ismo st like lya t tributedto the ba n d s tr uctu re modif ic atio natth e structural ph ase
s}}$ was_suggested to_explain the drop of_the effective_electron_and hole_densities_without a change_of Fermi surface_volume. However, our observation_of the simultaneous_increase_of the hole density and decrease of the electron density cannot be explained only_by_the strongly_anisotropic_carrier_scattering. The present THz magneto-optical_spectroscopy unambiguously reveals the temperature_dependence of_the electron and hole densities, which suggests the_Fermi_surface modification in_the nematic phase. The reduction of carrier density below_$T_{\mathrm{s}}$ has also been observed by_conventional far-infrared optical_reflectivity_measurement[@Nakajima:2017cw]._By using the scattering_time and effective mass, we further_evaluate the mobility $\mu=e\tau/m^*$ for each_carrier as shown in Fig. 4(c). The mobility_of the hole increases at lower_temperature as a result of_the increase_of the scattering time. The_temperature dependence of_the dc_Hall coefficient described_as $R_{\mathrm{H}}\approx \sigma_{xy}(\omega=0)/(\sigma_{xx}(\omega=0)^2 B)$ is plotted_(red circles) in_Fig. 4(d). It shows an excellent_agreement_with the Hall_coefficient_obtained_by dc_magneto-transport measurement (grey_solid_curve), indicating_that_the dc transport and the THz_response_are described by the common physical origin_of the charge carrier_dynamics._Accordingly, the peculiar temperature_dependence of the Hall coefficient_that increases monotonically toward the low_temperature is_dominantly attributed_to the increase of hole scattering time.

![Temperature dependence of (a) scattering_times, (b) carrier densities, (c) mobilities_of the electron and_hole of_FeSe_thin film given_by_THz magneto-spectroscopy._The structural transition temperature Ts is indicated_by arrows._(d) Hall coefficient of FeSe thin_film as a function_of_temperature, obtained by THz magneto-spectroscopy (red_circles) and dc transport measurement (grey_line).](Fig4.pdf){width="\columnwidth"}

In summary, we performed THz_magneto-optical_spectroscopy_to investigate the charge carrier_dynamics in FeSe. The obtained diagonal_and off-diagonal conductivity_spectra are well described by two-carrier Drude_model,_from which the carrier densities, scattering_times_and effective masses of electron and_hole_carriers_are determined in a wide_temperature range. We found the significant_temperature dependence of the carrier densities of electrons and_holes below $T_{\mathrm{s}}$,_which is most likely attributed_to_the_band structure modification at the structural phase