One of the most interesting features of any VECSEL is the small thickness of the semiconductor gain region in the direction of propagation, less than 100 nm. In contrast, a conventional in-plane semiconductor laser entails light propagation over distances of from 250 μm upward to 2 mm or longer. The significance of the short propagation distance is that it causes the effect of antiguiding nonlinearities in the diode laser gain region to be minimized. The result is a large-cross-section single-mode optical beam that is not attainable from in-plane ("edge-emitting") diode lasers.
One of the most interesting features of any VECSEL is the small thickness of the semiconductor gain region in the direction of propagation, less than 100 nm. In contrast, a conventional in-plane semiconductor laser entails light propagation over distances of from 250 μm upward to 2 mm or longer. The significance of the short propagation distance is that it causes the effect of antiguiding nonlinearities in the diode laser gain region to be minimized. The result is a large-cross-section single-mode optical beam that is not attainable from in-plane ("edge-emitting"). diode lasers.