When a voltage is applied between the gate and the source, the electric field generated penetrates through the oxide and creates an inversion layer or channel at the semiconductor-insulator interface. The inversion layer provides a channel through which current can pass between source and drain terminals. Varying the voltage between the gate and body modulates the conductivity of this layer and thereby controls the current flow between drain and source. This is known as enhancement mode.
When a voltage is applied between the gate and the source, the electric field generated penetrates through the oxide and creates an inversion layer or channel at the semiconductor-insulator interface. The inversion layer provides a channel through which current can pass between source and drain terminals Varying the voltage between the gate and body modulates the conductivity of this layer and thereby contr.ols the current flow between drain and source. This is known as enhancement mode.