The resulting wafer is then "hard-baked" if a non-chemically amplified resist was used, typically at 120 to 180 °C for 20 to 30 minutes. The hard bake solidifies the remaining photoresist, to make a more durable protecting layer in future ion implantation, wet chemical etching, or plasma etching.
The resulting wafer is then "hard-baked" if a non-chemically amplified resist was used typically at 120 to 180 °C for 20 to 30 minutes The hard bake solidifies the remaining photoresist, to make a more durable protecting layer in future ion implantation, wet. chemical etching, or pla,sma etching.