Preparation and chemistry In the compound, gallium has a +3 oxidation state. Gallium arsenide single crystals can be prepared by three industrial processes: The vertical gradient freeze (VGF) process. Crystal growth using a horizontal zone furnace in the Bridgman-Stockbarger technique, in which gallium and arsenic vapors react, and free molecules deposit on a seed crystal at the cooler end of the furnace. Liquid encapsulated Czochralski (LEC) growth is used for producing high-purity single crystals that can exhibit semi-insulating characteristics (see below). Most GaAs wafers are produced using this process.
preparation and chemistry in the compound gallium has a +3 oxidation state gallium arsenide single crystals can be prepared by three industrial processes the vertical gradient freeze (vgf) process crystal growth using a horizontal zone furnace in the bridgman-stockbarger technique in which gallium and arsenic vapors react and free molecules deposit on a seed crystal at the cooler end of the furnace liquid encapsulated czochralski (lec) growth is used for producing high-purity single crystals that can exhibit semi-insulating characteristics (see below) most gaas wafers are produced using this process