Bipolar junction transistors (BJTs) are formed from two p–n junctions, in either n–p–n or p–n–p configuration. The middle, or base, the region between the junctions is typically very narrow. The other regions, and their associated terminals, are known as the emitter and the collector. A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased. This creates a much larger current between the collector and emitter, controlled by the base-emitter current.
Bipolar junction transistors (BJTs) are formed from two p–n junctions in either n–p–n or p–n–p configuration The middle or base the region between the junctions is typically very narrow The other regions and their associated terminals are known as the emitter and the collector A small current injected through the junction between the base and the emitter changes the properties of the base-collector junction so that it can conduct current even though it is reverse biased This creates a much larger current between the collector and emitter controlled by the base-emitter current