The germanium integrated circuit (IC) was invented by Jack Kilby at Texas Instruments in 1958. The silicon integrated circuit was then invented in 1959 by Robert Noyce at Fairchild Semiconductor, using the planar process developed by Jean Hoerni, who was in turn building on Mohamed Atalla's silicon surface passivation method developed at Bell Labs in 1957. Following the invention of the MOS transistor by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, the MOS integrated circuit was developed by Fred Heiman and Steven Hofstein at RCA in 1962. The silicon-gate MOS IC was later developed by Federico Faggin at Fairchild Semiconductor in 1968. With the advent of the MOS transistor and the MOS IC, transistor technology rapidly improved, and the ratio of computing power to size increased dramatically, giving direct access to computers to ever smaller groups of people.
The germanium integrated circuit (IC) was invented by Jack Kilby at Texas Instruments in 1958. The silicon integrated circuit was then invented in 1959 by Robert Noyce at Fairchild Semiconductor, using the planar process developed by Jean Hoerni, who was in turn building on Mohamed Atalla's silicon surface passivation method developed at Bell Labs in 1957. Following the invention of the MOS transistor by Mohamed Atalla and Dawon Kahng at Bell Labs in 1959, the MOS integrated circuit was developed by Fred Heiman and Steven Hofstein at RCA in 1962. The silicon-gate MOS IC was later developed by Federico Faggin at Fairchild Semiconductor in 1968. With the advent of the MOS transistor and the MOS IC, transistor technology rapidly improved, and the ratio of computing power to size increased dramatically, giving direct access to computers to ever smaller groups of people.