12. A method of generating a nonlinear simulation model of a transistor, the method comprising: providing large-signal nonlinear waveform data of the transistor from a nonlinear vector network analyzer; identifying dependencies of a model current source and a model charge source on at least one instantaneous terminal voltage, temperature and at least one trap state of the transistor identified directly from the nonlinear waveform data; representing the identified dependencies using corresponding artificial neural networks; and compiling a model comprising the represented dependencies for implementation into a nonlinear circuit simulator to generate the nonlinear simulation model of the transistor.
12. A method of generating a nonlinear simulation model of a transistor, the method comprising: providing large-signal nonlinear waveform data of the transistor from a nonlinear vector network analyzer; identifying dependencies of a model current source and a model charge source on at least one instantaneous terminal voltage, temperature and at least one trap state of the transistor identified directly from the nonlinear waveform data; representing the identified dependencies using corresponding artificial neural networks; and compiling a model comprising the represented dependencies for implementation into a nonlinear circuit simulator to generate the nonlinear simulation model of the transistor. 18. The method of claim 12 , wherein providing the nonlinear waveform data of the transistor comprises: performing calibrated waveform measurements of input signals at different radio frequency (RF) powers, DC biases, ambient temperatures and load conditions.