4. The content addressable memory cell apparatus of claim 2 , wherein a search operation is performed by turning off the first transistor and placing a search value on at least two of the plurality of the search lines.
4. The content addressable memory cell apparatus of claim 2 , wherein a search operation is performed by turning off the first transistor and placing a search value on at least two of the plurality of the search lines. 6. The content addressable memory cell apparatus of claim 4 , wherein a mismatch between the search value and the stored value is determined by a low resistance between at least two of the plurality of matchlines.