9. The method of claim 8 , wherein transforming the die stack into at least two separate dies involves: identifying a transform boundary between the first die and the second die; and separating the first die from the second die to create a first transformed die and a second transformed die, respectively, wherein the first transformed die includes the first die and at least one metal layer adjacent to the transform boundary in the second die; wherein the second transformed die includes the second die and at least one metal layer adjacent to the transform boundary in the first die; and wherein including at least one metal layer from an adjacent die facilitates maintaining equivalency between the two transformed dies and the die stack.
9. The method of claim 8 , wherein transforming the die stack into at least two separate dies involves: identifying a transform boundary between the first die and the second die; and separating the first die from the second die to create a first transformed die and a second transformed die, respectively, wherein the first transformed die includes the first die and at least one metal layer adjacent to the transform boundary in the second die; wherein the second transformed die includes the second die and at least one metal layer adjacent to the transform boundary in the first die; and wherein including at least one metal layer from an adjacent die facilitates maintaining equivalency between the two transformed dies and the die stack. 10. The method of claim 9 , wherein the transform boundary can be: an interface between a top metal layer in the first die and a top metal layer in the second die in a face-to-face configuration of the 3D-IC die description; an interface between a back-side metal layer in the first die and a top metal layer in the second die in a face-to-back configuration of the 3D-IC die description; or an interface between a back-side metal layer in the first die and a back-side metal layer in the second die in a back-to-back configuration of the 3D-IC die description.