1. A method, comprising: by a first circuit, converting a plurality of bits in a first format to a second format; and by a second circuit, causing a plurality of redundancy memory cells of a memory structure to store an information word corresponding to logical values of the plurality of bits, wherein the first circuit and the second circuit are electrically coupled together in a first chip; and the information word corresponding to the logical values of the plurality of bits comprises address information, cell data information, and program information of a memory cell of the memory structure that has an error.
1. A method, comprising: by a first circuit, converting a plurality of bits in a first format to a second format; and by a second circuit, causing a plurality of redundancy memory cells of a memory structure to store an information word corresponding to logical values of the plurality of bits, wherein the first circuit and the second circuit are electrically coupled together in a first chip; and the information word corresponding to the logical values of the plurality of bits comprises address information, cell data information, and program information of a memory cell of the memory structure that has an error. 6. The method of claim 1 , further comprising, by a third circuit in the first chip, acquiring an error code and correction information based on a memory data word.