11. The content addressable memory cell apparatus of claim 7 , wherein a search operation is performed by turning off the first and the second transistors and placing a search value on at least two of the plurality of the search lines.
11. The content addressable memory cell apparatus of claim 7 , wherein a search operation is performed by turning off the first and the second transistors and placing a search value on at least two of the plurality of the search lines. 13. The content addressable memory cell apparatus of claim 11 , wherein a mismatch between the search value and the stored value is determined by a low resistance between at least two of the plurality of matchlines.