12. The method of claim 11 , wherein the patterning the second photoresist layer includes: coating the second photoresist layer on the material layer; exposing the second photoresist layer using the second photomask; exposing the second photoresist layer using the third photomask; and thereafter, developing the second photoresist layer.
12. The method of claim 11 , wherein the patterning the second photoresist layer includes: coating the second photoresist layer on the material layer; exposing the second photoresist layer using the second photomask; exposing the second photoresist layer using the third photomask; and thereafter, developing the second photoresist layer. 13. The method of claim 12 , wherein the exposing the second photoresist layer using the second photomask and the exposing the second photoresist layer using the third pahotomask are implemented in one of sequential exposure mode and simultaneous exposure mode.