14. A memory structure comprising: a conversion engine configured to receive a plurality of bits in a first format, and to convert the plurality of bits in the first format to a second format, wherein each bit of the plurality of bits corresponds to a redundancy memory cell of a plurality of redundancy memory cells of the memory structure and has a logical value; and a program engine electrically coupled to the conversion engine and configured to receive the plurality of bits in the second format as inputs, and to cause the plurality of redundancy memory cells to store an information word corresponding to the logical values of the plurality of bits, wherein the first format is a parallel format; the second format is a serial format; the conversion engine and the program engine are in a single chip; and the information word corresponding to the logical values of the plurality of bits includes address information and data information of a memory cell of the memory structure that has an error.
14. A memory structure comprising: a conversion engine configured to receive a plurality of bits in a first format, and to convert the plurality of bits in the first format to a second format, wherein each bit of the plurality of bits corresponds to a redundancy memory cell of a plurality of redundancy memory cells of the memory structure and has a logical value; and a program engine electrically coupled to the conversion engine and configured to receive the plurality of bits in the second format as inputs, and to cause the plurality of redundancy memory cells to store an information word corresponding to the logical values of the plurality of bits, wherein the first format is a parallel format; the second format is a serial format; the conversion engine and the program engine are in a single chip; and the information word corresponding to the logical values of the plurality of bits includes address information and data information of a memory cell of the memory structure that has an error. 15. The memory structure of claim 14 , wherein at least one of the plurality of redundancy memory cells or the memory cell that has the error is an electrical fuse.