3. The method of claim 2 , wherein transforming the 3D-IC die description into a set of 2D-IC die descriptions involves transforming the TSV die into one or more 2D-IC die descriptions.
3. The method of claim 2 , wherein transforming the 3D-IC die description into a set of 2D-IC die descriptions involves transforming the TSV die into one or more 2D-IC die descriptions. 5. The method of claim 3 , wherein transforming the TSV die into one or more 2D-IC die descriptions further involves maintaining equivalency between the TSV die and the 2D-IC die description by creating a virtual substrate shield layer which is a conductor layer disposed between the virtual front-side layer stack and the top metal layer of the front-side layer stack, wherein the TSV passes through the virtual substrate shield layer.