1. A solid state memory device, comprising: multiple data blocks, each block comprising an array of memory cells arranged in a plurality of pages; encoder circuitry configured to encode data into inner code words and symbol-based outer code words; and modulator circuitry configured to store the inner code words and the symbol-based outer code words in the memory cells of the multiple blocks, the modulator circuitry configured to store one or more inner code words in each page of each block and to store one or more symbols of each outer code word in at least one page of each block.
1. A solid state memory device, comprising: multiple data blocks, each block comprising an array of memory cells arranged in a plurality of pages; encoder circuitry configured to encode data into inner code words and symbol-based outer code words; and modulator circuitry configured to store the inner code words and the symbol-based outer code words in the memory cells of the multiple blocks, the modulator circuitry configured to store one or more inner code words in each page of each block and to store one or more symbols of each outer code word in at least one page of each block. 10. The device of claim 1 , further comprising: demodulator circuitry configured to read the memory cells of the memory device; and decoder circuitry configured to decode the inner code words and the outer code words and to correct errors in the inner code words and the outer code words.