1. An operating method for operating a memory device, which comprises a substrate, a plurality of word lines, and a plurality of dummy word lines, wherein the word lines and the dummy word lines are disposed on the substrate, at least one side of each of the dummy word lines is adjacent to the word line, and two dummy word lines are respectively disposed on two sides of each of the word lines, wherein at least one word line and at least one dummy word line form a group, the operating method comprising: selecting at least one group and performing an operation on the selected group; applying a first operational voltage to the word line of the selected group; and applying a second operational voltage to the dummy word line of the selected group, wherein when the first operational voltage is applied to the word line of the selected group, the second operational voltage is applied to the dummy word line of the selected group simultaneously.
1. An operating method for operating a memory device, which comprises a substrate, a plurality of word lines, and a plurality of dummy word lines, wherein the word lines and the dummy word lines are disposed on the substrate, at least one side of each of the dummy word lines is adjacent to the word line, and two dummy word lines are respectively disposed on two sides of each of the word lines, wherein at least one word line and at least one dummy word line form a group, the operating method comprising: selecting at least one group and performing an operation on the selected group; applying a first operational voltage to the word line of the selected group; and applying a second operational voltage to the dummy word line of the selected group, wherein when the first operational voltage is applied to the word line of the selected group, the second operational voltage is applied to the dummy word line of the selected group simultaneously. 4. The operating method according to claim 1 , wherein the operation comprises programming, reading, or erasing.