1. A memory device comprising: a plurality of normal word lines arranged at a first distance from each other; a redundant word line arranged at a second distance, which is greater than the first distance, from a normal word line adjacent to the redundant word line, among the normal word lines; a dummy word line arranged between the redundant word line and the normal word line adjacent to the redundant word line; and a word line control unit suitable for selectively activating the normal word lines, and replacing a frequently activated word line with the redundant word line when the frequently activated word line is detected among the normal word lines, wherein the distance between the normal word line adjacent to the redundant word line and the dummy word line is greater than the first distance.
1. A memory device comprising: a plurality of normal word lines arranged at a first distance from each other; a redundant word line arranged at a second distance, which is greater than the first distance, from a normal word line adjacent to the redundant word line, among the normal word lines; a dummy word line arranged between the redundant word line and the normal word line adjacent to the redundant word line; and a word line control unit suitable for selectively activating the normal word lines, and replacing a frequently activated word line with the redundant word line when the frequently activated word line is detected among the normal word lines, wherein the distance between the normal word line adjacent to the redundant word line and the dummy word line is greater than the first distance. 2. The memory device of claim 1 , wherein the frequently activated word line comprises a normal word line of which the number of activations is equal to or more than a reference number or the active frequency is equal to or more than a reference frequency, among the normal word lines.