11. The apparatus of claim 10 , wherein the third voltage is greater than the first voltage.
10. A non-volatile storage apparatus, comprising: a plurality of non-volatile storage elements; word lines connected to the plurality of non-volatile storage elements, for a programming process the word lines include a selected word line, a set of unselected word lines that are adjacent to the selected word line and a set of other unselected word lines; bit lines connected to the plurality of non-volatile storage elements; and one or more managing circuits in communication with the plurality of non-volatile storage elements via the word lines and the bit lines, the one or more managing circuits raise the selected word line and the set of other unselected word lines to a first voltage during a first time period from a first time to a second time, raise the set of unselected word lines that are adjacent to the selected word line to one or more second voltages during the first time period, raise the selected word line to a program voltage causing at least one of the non-volatile storage elements to experience programming during a second time period from the second time to a third time, raise the set of unselected word lines that are adjacent to the selected word line to a third voltage during the second time period, and maintain the set of other unselected word lines at the first voltage during the second time period.