16. The method of claim 10 , wherein the second programming and second program-verify operations during the second programming phase are conducted in a sequential order, comprising: programming one or more of the plurality of charge trapping memory cells along the word line to a first program level; verifying one or more of the plurality of charge trapping memory cells along the word line to a first program-verify level (PV 1 B); programming one or more of the plurality of charge trapping memory cells along the word line to a second program level; verifying one or more of the plurality of charge trapping memory cells along the word line to a second program-verify level (PV 2 B); programming one or more of the plurality of charge trapping memory cells along the word line to third program level; and verifying one or more of the plurality of charge trapping memory cells along the word line to a third program-verify level (PV 3 B).
18. The method of claim 16 , wherein the first program-verify level is higher than the second program-verify level, and the second program-verify level is high than the third program-verify level.