6. The method of claim 5 , wherein the virtual substrate shield layer is invisible to the front-side layer stack.
5. The method of claim 3 , wherein transforming the TSV die into one or more 2D-IC die descriptions further involves maintaining equivalency between the TSV die and the 2D-IC die description by creating a virtual substrate shield layer which is a conductor layer disposed between the virtual front-side layer stack and the top metal layer of the front-side layer stack, wherein the TSV passes through the virtual substrate shield layer.