8. The method of claim 1 , further comprising: defining and nesting statistical model cards; adding SPICE elements to a .subckt to model extrinsic characteristics; implementing multiple spice simulations for different seed parameters based on the theoretical extracted parameters; flattening a circuit netlist to transistor level; perturbing at least one of the key independent parameters and the theoretical extracted parameters; storing results in an accessible format; comparing results to manufactured circuits; and modifying at least one of manufacturing characteristics, key independent parameters, or theoretical extracted parameters based on the comparison.
1. A method of optimizing MOSFET device production comprising: defining, using a computer, key independent parameters; formulating key independent parameters into a canonical variational form, wherein the canonical variational form comprises a key independent parameter extracted at nominal, or target, device specifications plus a product of magnitude of a variation of the key independent parameter, relative to a skew of a distribution on device characteristics, and a selected distribution; calculating theoretical extracted parameters using at least one of key independent parameters in canonical variational form, physics-based analytical models, and corner models; calculating simulated characteristics of a device using at least one of key independent parameters in canonical form or theoretical extracted parameters using a variational model; extracting target data parameters based on at least one of measured data and predicted data; comparing the simulated characteristics to the target data parameters; modifying the theoretical extracted parameters based on the comparison to the target data parameters; modifying the key independent parameters in canonical form based on the modified theoretical extracted parameters; calculating and outputting the simulated characteristics based on the modified theoretical extracted parameters and the modified key independent parameters in canonical form; and modifying the key independent parameters in the device production using the simulated characteristics.