1. A method for operating a non-volatile memory device, comprising: performing an erase operation on a second word line group different from a first word line group of a plurality of word lines in response to an erase command and an address corresponding to the erase command; selecting a word line of the plurality of word lines in response to a program command and an address corresponding to the program command; determining whether the selected word line is a word line set among the plurality of word lines; performing an erase operation on the first word line group of the plurality of word lines in response to a result of the determining; and performing a program operation on the selected word line.
5. The method of claim 1 , wherein the address of the set word line is stored in a memory device or inputted to the memory device with the erase command.