6. The memory device of claim 1 , wherein when an address corresponding to the frequently activated word line is inputted after the frequently activated word line is replaced with the redundant word line, the word line control unit accesses the redundant word line instead of the frequently activated word line.
1. A memory device comprising: a plurality of normal word lines arranged at a first distance from each other; a redundant word line arranged at a second distance, which is greater than the first distance, from a normal word line adjacent to the redundant word line, among the normal word lines; a dummy word line arranged between the redundant word line and the normal word line adjacent to the redundant word line; and a word line control unit suitable for selectively activating the normal word lines, and replacing a frequently activated word line with the redundant word line when the frequently activated word line is detected among the normal word lines, wherein the distance between the normal word line adjacent to the redundant word line and the dummy word line is greater than the first distance.