1. An apparatus comprising: a memory element configured to store information; and an access component configured to allow conduction of current through the memory element when a first voltage difference in a first direction across the memory element and the access component exceeds a first voltage value and to prevent conduction of current through the memory element when a second voltage difference in a second direction across the memory element and the access component exceeds a second voltage value, wherein the access component includes a material excluding silicon, and, wherein the access component includes a conduction path formed by one of ions and vacancies of the material of the access component when the first voltage difference exceeds the first voltage value.