1. A semiconductor storage device comprising: a storage part including a plurality of nonvolatile semiconductor memory cells each having a conductive path, a charge storage layer and a control gate electrode; a plurality of first input terminals, each connected to one end of the conductive path of each nonvolatile semiconductor memory cell; a plurality of second input terminals, each connected to the control gate of each nonvolatile semiconductor memory cell; and an output end connected to the other ends of the conductive paths of the nonvolatile semiconductor memory cells, respectively.