1. A method for demultiplexing a crossbar non-volatile memory, comprising: providing a crossbar non-volatile memory including a first array of addressable row nano-wires and a second array of addressable column nano-wires crossing said addressable row nano-wires at a plurality of cross-points hosting a plurality of memory cells; providing a first electrode and a second electrode, respectively crossing a doping modulated portion of said row nano-wires and a doping modulated portion of said column nano-wires; providing a first contact and a second contact electrically contacting respectively said row nano-wires and said column nano-wires; progressively biasing said first electrode and said second electrode respectively with first and second adjustable voltage values enabling a progressive switching of said memory cells from an OFF state to an ON state; and memorizing said memory cells state.