1. A method for optical proximity correction (OPC) model accuracy verification for a semiconductor product, the method comprising: generating a multifeature test pattern, the multifeature test pattern comprising a plurality of features selected from the semiconductor product, wherein the plurality of features of the multifeature test pattern comprises at least two of: pitch, line-end, dense line-end, H bar, broken H bar, nested U, mirror U, landing-pad, two-T, snake, mushroom, rotated-L, and contact, and wherein the multifeature test pattern further includes one or more failure modes, the one or more failure modes comprising at least one of bridging, necking, and ringing; exposing and printing the multifeature test pattern on a test wafer under a process condition; generating an OPC model of the semiconductor product for the process condition; and comparing the test wafer to the OPC model to verify the accuracy of the OPC model.