1. A non-volatile memory comprising: a bit line; a word line; at least one non-volatile memory cell, each having: a two-terminal nanotube switching device comprising first and second conductive terminals and a nanotube fabric article disposed between and in electrical communication with the first and second conductive terminals; a cell selection circuit in electrical communication with the bit line and the word line to select the two-terminal nanotube switching device for read and write operations in response to activation of at least one of the bit line and the word line; write control circuitry, responsive to a control signal, for supplying write signals to a selected memory cell to induce a change in the resistance of the nanotube fabric article, wherein the value of the resistance of the nanotube fabric article corresponds to an informational state of the memory cell; resistance sensing circuitry in communication with a selected nonvolatile memory cell, for sensing the resistance of the nanotube fabric article and providing the control signal to the write control circuitry; and read circuitry in communication with a selected nonvolatile memory cell for reading the corresponding informational state of the memory cell.