1. A nonvolatile memory comprising: a memory cell array including a plurality of nonvolatile memory cells; a determination unit that determines whether a change process is executable or not, the change process being a process based on characteristics of the memory cell array when a first write process is performed, the first write process writing data to lower pages of at least part of the plurality of nonvolatile memory cells, the change process changing at least one of a value of a write start voltage and an increase amount in a write voltage in a second write process, the second write process being a process where a write operation of writing data to upper pages of at least part of the plurality of nonvolatile memory cells and a verification operation are alternately repeated; and a setting unit that sets a maximum value for determining whether the second write process succeeds or fails to a first value when the change process is executable, and sets the maximum value to a second value when the change process is not executable.