1. A three-dimensional (3D) stacked non-volatile storage device, comprising: a substrate; a plurality of horizontal word line layers each comprising a conductive material above the substrate, each horizontal word line layer comprising at least one word line plate and a plurality of word lines, wherein each of the word line plates is associated with multiple word lines of the plurality of word lines; a plurality of horizontal dielectric layers alternating with the horizontal word line layers in a stack above the substrate; a plurality of vertically-oriented non-volatile storage element strings above the substrate, wherein each vertically-oriented non-volatile storage element string comprises a plurality of non-volatile storage elements; and a plurality of word line select gates in the plurality of word line layers, wherein an individual word line select gate is located between a first word line plate in a first of the word line layers and a first word line of the multiple word lines associated with the first word line plate.