1. A memory, comprising: a plurality of normal memory cells and a plurality of redundant memory cells; at least one selector to select normal memory cells or redundant memory cells; at least one One-Time Programmable (OTP) memory having a plurality of OTP cells configured to store one or more defective addresses, the OTP cells can be programmed or read with at least one supply voltage no more than 4.0 Volts; and at least one match circuit configured to evaluate whether an access memory address has been stored as a defective address in the OTP memory, wherein at least one OTP cell has at least a segment of interconnect as an OTP element and at least a diode as a program selector, and wherein the memory can be repaired or configured by programming new defective addresses or configuration parameters into the OTP memory.