1. A ferroelectric memory comprising: first stripe electrodes; second stripe electrodes crossing the first stripe electrodes at a different height level from the first stripe electrodes; a plurality of memory cells, each of said memory cells being arranged between the first and second stripe electrodes, and each memory-cell including: a ferroelectric thin film electrically connected with one of the first stripe electrodes; a nonlinear resistive thin film layer electrically connected with the ferroelectric thin film and with one of the second stripe electrodes, said nonlinear resistive thin film layer having an odd-numbered multilayer structure, said nonlinear resistive layer having a three-layered structure of respective layers of Bi.sub.2 O.sub.3 /ZnO/Bi.sub.2 O.sub.3 ; and an intermediate electrode formed between the ferroelectric thin film and the nonlinear resistive thin film layer, said intermediate electrode being electrically connected with the ferroelectric thin film and with the nonlinear resistive thin film layer so as to electrically connect the nonlinear resistive thin film layer with the ferroelectric thin film.