1. A method for forming a photoresist relief image over a substrate having topography, the method comprising: (a) applying on a substrate a layer of an antireflective composition that comprises a polymer having a molecular weight (M w ) of about 8,000 or less; (b) applying a layer of a photoresist composition over the antireflective composition layer; and (c) exposing and the photoresist layer to activating radiation and developing the exposed photoresist layer.