1. A superconducting integrated circuit, comprising: a Josephson junction trilayer having a hydrogen-sensitive barrier layer disposed between two superconducting layers and forming at least one Josephson junction switching device; a hydrogen-diffusion barrier layer formed on at least one surface of the Josephson junction trilayer of a material subject to induced superconductivity at a cryogenic operating temperature of the Josephson junction trilayer; and a superconducting connection layer which is a source of the diffusible hydrogen, configured to form a non-switching superconducting circuit current flow path through the induced superconductivity hydrogen-diffusion barrier layer to one of the two superconducting layers of the Josephson junction trilayer, wherein the hydrogen-diffusion barrier layer sufficiently blocks hydrogen diffusion from the superconducting connection layer into the Josephson junction switching device at a storage temperature of 290K to ensure stable switching of the at least one Josephson junction switching device over time after cooling the superconducting integrated circuit to the cryogenic operating temperature.