1. A memory array comprising: a resistive-switching memory element including: a first electrode having a first work function; a second electrode having a second work function, wherein the second work function is greater than the first work function, and the difference between the first work function and the second work function is between 0.1 and 1.0 electron volts (eV); a resistive-switching layer between the first electrode and the second electrode, the resistive-switching layer selected from the group consisting of hafnium oxide, tantalum oxide, aluminum oxide, zirconium oxide, and yttrium oxide; a diode connected to the first electrode of the resistive-switching memory element, wherein a cathode of the diode is connected to the first electrode of the resistive-switching memory element; a signal line connected to the second electrode of the resistive-switching memory element, the signal line configured to provide a positive set voltage relative to a common electrical reference for the resistive-switching memory element and a negative reset voltage relative to the common electrical reference for the resistive-switching memory element, wherein a magnitude of a breakdown voltage of the diode is greater than a magnitude of the set voltage.