1. A memory system comprising: a plurality of ternary content addressable memory (TCAM) cells arranged in a column, each TCAM cell including at least one memory cell and match logic; wherein each memory cell of a first set of the TCAM cells in the column has a first layout, and each memory cell of a second set of the TCAM cells in the column has a second layout, the second layout being a mirror image about a vertical axis of the first layout, and wherein the match logic of each TCAM cell has the same layout as each other; and a bit line pair connected to each of the plurality of TCAM cells, wherein data is written to and read from the TCAM cells on the bit line pair.