1. A method for simulating a magnetoresistive memory device of a magnetoresistive random access memory (MRAM) having a first conductor, a second conductor, and a magnetic tunnel junction (MTJ), the first conductor disposed substantially orthogonal to the second conductor, the MTJ disposed between the first conductor and the second conductor, the method comprising: calculating a first current in the first conductor; calculating a second current in the second conductor; detecting an indication of a transition of one of the first current and the second current across a threshold; modifying a status of an operating condition of a plurality of operating conditions in response to the detecting the indication of the transition; and outputting a bit state that is dependent upon a status of the plurality of operating conditions.