1. A memory device, comprising: a magnetic structure that stores information in a plurality of domains of the magnetic structure; a read unit that reads information from at least one of the plurality of domains of the magnetic structure by applying a read current to the magnetic structure; and a position detector unit that compares the information read by a read current from the read unit from multiple domains of the plurality of domains of the magnetic structure to identify the presence of an expected information pattern at select domains of the plurality of domains, wherein the expected information pattern comprises: a first pattern; a second pattern spaced apart from the first pattern by a number of domains of the plurality of domains of the magnetic structure, and wherein the second pattern comprises a plurality of second patterns that are spaced apart from each other by a number of domains of the plurality of domains of the magnetic structure and wherein the number of domains between each of the plurality of second patterns is the same.