1. A computer-implemented method of determining parameters of a power MOSFET model, the model comprising static parameters and dynamic parameters, the method comprising: receiving data for a semiconductor device, the data including (i) first data related to characteristics of the device in a steady-state operation, and (ii) second data related to transient-response characteristics of the device; fitting variables of one or more functions to the first data to determine static parameters of a power MOSFET model; executing a computer simulation to determine transient-response characteristics of the model as configured with the static parameters and a current set of dynamic parameters, the simulation generating a set of values indicative of the model's transient-response characteristics; determining an error value indicating a difference between the set of values and the second data; based on a determination that the error value is less than or equal to a threshold, setting dynamic parameters of the model equal to the current set of dynamic parameters; and based on a determination that the error value is greater than the threshold: for each of the dynamic parameters of the model, executing a set of computer simulations in which a value of the dynamic parameter in the model is varied over the set of simulations while holding constant values of other dynamic parameters in the model, and adjusting values of the current set of dynamic parameters based on the error value and results of the sets of computer simulations; wherein the power MOSFET model is provided for manufacturing the semiconductor device.