1. A green MOSFET transistor (gFET comprising: a substrate; a gate formed on the substrate, and separated from the substrate by a gate dielectric; a drain formed under the gate and in the substrate; a first source formed near one side of the gate and in the drain; a first pocket implant region formed in the first source; and a second source and a second pocket implant region formed under the other side of the gate in the drain symmetrically, spaced apart from the first source and the first pocket implant region, wherein both of the first and the second pocket implant region have the same conductivity as the drain, and have the opposite conductivity to the first and the second source.