1. A programming method for a non-volatile memory device, the method comprising: applying a program voltage to a selected word line; applying an elevated pass voltage to word lines adjacent to the selected word line in a plurality of word lines; and applying a pass voltage to remaining word lines in the plurality of word lines, wherein the elevated pass voltage is higher than the pass voltage and lower than the program voltage, and a voltage difference between the program voltage and the elevated pass voltage and a voltage difference between the elevated pass voltage and the pass voltage are less than a breakdown voltage of an insulation layer disposed between adjacent word lines in the plurality of word lines.