1. A method of manufacturing a ferroelectric memory of MFS or MFIS-type, comprising the steps of: a) forming on a substrate an insulating layer for preventing reaction at an interface between a ferroelectric material and a silicon substrate; b) forming a ferroelectric layer on the insulating layer; c) reacting a material of the insulating layer with a material of the ferroelectric layer, to transform the insulating layer into part of the ferroelectric layer; and d) forming an electrode on the ferroelectric layer, and wherein the insulating layer is formed of a material selected from the group of materials consisting of the ferroelectric layer.