1. A method of fabricating switching devices for integrated circuits, comprising: forming a bottom electrode in contact with a conductive region in a semiconductor base material; providing a glass electrolyte layer having metal ions diffused therein and being capable of growing conductive paths under the influence of an applied voltage; forming a top electrode layer; and patterning and etching through the top electrode layer, the glass electrolyte layer and the bottom electrode to define separate pillars of stacked materials.