1. An electronic memory, comprising: a resistive random access memory (RRAM) connected at a first RRAM terminal to a bitline of the electronic memory; a read transistor have a gate connected to a second RRAM terminal of the RRAM; and a sensing circuit connected to a channel region of the read transistor via a sensing bitline; wherein: the sensing circuit determines a state of the RRAM from a characteristic of the channel region in response to a transient read signal applied through the bitline to the first RRAM terminal.