1. A non-volatile memory device, comprising: a plurality of non-volatile memory cells, wherein each of the non-volatile memory cells is used for storing data of one bit, and each of the non-volatile memory cells is connected to a bit line, an inverted bit line and a word line respectively, and each of the non-volatile memory cells comprises: a first switch, wherein a control terminal of the first switch is coupled to the word line; a first memristor configured as having a first impedance; a second switch, wherein a control terminal of the second switch is coupled to the word line; a second memristor configured as having a second impedance, wherein the first switch, the first memristor, the second switch and the second memristor are serially connected in an alternate manner between the bit line and the inverted bit line; and a third switch used for configuring the first impedance of the first memristor and configuring the second impedance of the second memristor.