1. A method, comprising: receiving optical profiles for a plurality of design target features associated with an integrated circuit device; receiving optical profiles for a plurality of test features; defining an optical proximity correction (OPC) model including a plurality of terms, each term relating to at least one parameter in the optical profiles; identifying a subset of the model terms as being priority terms; matching parameters of the optical profiles of the test features to parameters of the optical profiles of the design target features using the priority terms to generate a set of matched test features; and generating a metrology request to collect metrology data from a test wafer having formed thereon at least a first subset of the matched test features and a second subset of the design target features.