1. A method for forming an electrostatically-doped carbon nanotube device, comprising: providing a carbon nanotube having a first end and a second end; disposing a first metal contact directly adjacent to the first end of the carbon nanotube, wherein the first metal contact is electrically coupled to the first end of the carbon nanotube; disposing a second metal contact directly adjacent to the second end of the carbon nanotube, wherein the second metal contact is electrically coupled to the second end of the carbon nanotube; disposing a first metal electrode adjacent to and at a distance from the first end of the carbon nanotube, wherein the first metal electrode is capacitively coupled to the first end of the carbon nanotube; disposing a second metal electrode adjacent to and at a distance from the second end of the carbon nanotube, wherein the second metal electrode is capacitively coupled to the second end of the carbon nanotube; selectively applying a first bias to the first metal electrode to electrostatically dope the first end of the carbon nanotube; and selectively applying a second bias to the second metal electrode to electrostatically dope the second end of the carbon nanotube.