1. A method for producing one or more vertical light-emitting diode (VLED) dies, the method comprising: growing an interface layer comprising at least one of InGaN and InAlGaN on a substrate for the dies; forming one or more light-emitting diode (LED) stacks above the interface layer; forming a metal layer above the LED stacks; removing the substrate and at least a portion of the interface layer; and separating the LED stacks along with corresponding sections of the metal layer above the LED stacks to produce the one or more VLED dies.