1. A control method of a non-volatile semiconductor device including a plurality of cells, to at least one of which a stress for rewriting information is applied, each of said cells having a first time period as a period of time in which a characteristic of said cell is stabilized to expectation value information after said stress for rewriting information is applied to said cell, said method comprising: a plurality of first sequences, in each of said first sequences, writing to a plurality of said cells being performed continuously in time series; and a plurality of second sequences, in each of said second sequences, verification of a plurality of said cells being performed continuously in time series, after said writing performed continuous in time series, said method further comprising in repeating a plurality of sets continuously in time series, each of said sets comprising a plurality of said first sequences and a plurality of said second sequences, arranging, for each set of entirety of said sets, a period of time from completion of application of said stress to each of said cells in said first sequence until start of said verification in said second sequence for said each of said cells subjected to said stress application, to said first time period or more.