1. A semiconductor device including a first device and a second device that are both provided on an insulating substrate wherein the first device is a transferred layer that has been transferred onto the insulating substrate at least with an active layer, a gate insulating film and a gate electrode that are previously formed thereon, and the second device is formed on the insulating substrate by being deposited thereon, wherein: the gate electrode is formed to be closer to the insulating substrate than the active layer, and the transferred layer includes (a) a marker whose position is detectable by light and (b) a light-transmissive insulating film formed on an opposite side to a side of the insulating substrate with respect to the marker.