1. A complementary metal oxide semiconductor (CMOS) circuit with integrated functional devices, comprising: a) a substrate having CMOS devices; b) a wiring layer disposed on the CMOS devices, wherein the wiring layer includes electrically conductive wiring and a dielectric layer; c) a first attachment layer bonded to the dielectric layer; d) a first functional device disposed on the attachment layer; e) an electrical connection between the electrically conductive wiring and the functional device.