1. A Resistive Random Access Memory (RRAM) cell comprising a two-state resistor and a resistive switching memory cell connected in series, wherein the two-state resistor comprises a lower conductive electrode, a two-state resistor functionality layer, and a middle conductive electrode, and wherein the two-state resistor functionality layer comprises an n-p-n junction or a p-n-p junction consisted of any one or more of doped Si, Ge, GaAs, InP, and SiGe.