1. A method of forming a nonplanar semiconductor device comprising: forming a semiconductor body having a top surface opposite a bottom surface and a pair of laterally opposite sidewalls above an insulating substrate; forming a gate dielectric on said top surface of said semiconductor body, on said laterally opposite sidewalls of said semiconductor body, and on at least a portion of said bottom surface of said semiconductor body; forming a gate electrode on said gate dielectric on said top surface of said semiconductor body and adjacent to said gate dielectric on said laterally opposite sidewalls of said semiconductor body and subadjacent to said gate dielectric formed on at least a portion of said bottom surface of said semiconductor body; and forming a pair of source/drain regions in said semiconductor body on opposite sides of said gate electrode.