1. An integrated circuit having a resistive memory comprising: a first electrode; a second electrode; and a storage portion between the first electrode and the second electrode, the storage portion comprising a storage medium and regions made of a material different than the storage medium, the regions having dimensions smaller than a feature size that can be dimensioned with lithography used to pattern the storage medium, and the regions made from the different material comprising patterned regions of a patterned electrically insulating layer.