1. A resistive random access memory device, comprising: a switching device; a storage node connected to the switching device, the storage node including a first electrode, a resistance variable layer, and a second electrode which are sequentially stacked; and a diffusion blocking layer, including a boron nitride layer, between the first electrode and the resistance variable layer or between the resistance variable layer and the second electrode, wherein the resistance variable layer is a transition metal oxide layer adapted to change resistance according to a voltage applied to the resistance variable layer.