1. A non-volatile re-programmable gate logic comprising: a non-volatile resistance-based memory cell comprising a sensor circuit configured to receive a selected threshold voltage and to output a first logical signal corresponding to a first logical functionality of the non-volatile resistance-based memory cell in response to the selected threshold voltage being a first threshold voltage, and to output a second logical signal corresponding to a second logical functionality of the non-volatile resistance-based memory cell in response to the selected threshold voltage being a second threshold voltage; and the sensor circuit configured to output a selected one or more logical signal based on a detected output signal and a selected threshold reference signal level.