1. A method, comprising: providing a semiconductor substrate comprising a titanium nitride layer; etching an oxide from the titanium nitride layer; rinsing the substrate with isopropyl alcohol; and applying a zincating formulation to the substrate, the zincating formulation comprising a zinc salt, FeCl 3 , and a pH adjuster to form a zinc passivation layer on the titanium nitride layer, wherein the pH adjuster comprises an acid.