1. A method of forming an Si--O containing coating on an electronic substrate comprising: applying a coating comprising hydrogen silsesquioxane resin on an electronic substrate; heating the coated electronic substrate to a temperature sufficient to convert the hydrogen silsesquioxane resin to an Si--O containing ceramic coating; and exposing the Si--0 containing ceramic coating to an annealing atmosphere containing hydrogen gas for a time and at a temperature sufficient to anneal the coating.