1. A method of flowing a current selectively with a nonvolatile switching device, the method comprising: a step (a) of preparing the nonvolatile switching device, wherein the nonvolatile switching device comprises a control electrode, a ferroelectric film, a semiconductor film, and a electrode group, the control electrode, the ferroelectric film, the semiconductor film, and the electrode group are stacked in this order, the electrode group comprises a first electrode, a second electrode, and a third electrode, the first electrode comprises a side L 2 with a length of LL and a side L 3 with a length of LS, the second electrode comprises a side L 4 with a length of LS and a side L 6 with a length of LS, the third electrode comprises a side L 7 with a length of LS and a side L 8 with a length of LL, the sides L 2 , L 3 , and L 6 are in parallel with the sides L 8 , L 4 , and L 7 , respectively, a following equation (A) is satisfied: 
 IL/LL=IS/LS (A) wherein the IL denotes an interval between the sides L 2 and L 8 , the IS denotes an interval between the sides L 3 and L 4 , and the interval between the sides L 6 and L 7 is equal to the IS, a step (b) of configuring any one of a first state, a second state, and a third state into the nonvolatile switching device, wherein a current does not flow between the electrode group in the first state, a current flows selectively between the first electrode and the second electrode in the second state, a current flows selectively between the first electrode and the third electrode in the third state, voltages V 1 , Va, Vb, and Vc are applied to the control electrode, the first electrode, the second electrode, and the third electrode, respectively, when the first state is configured, voltages which satisfy any one of the following inequality set (a) to (d) are applied: 
 V 1 >Va, V 1 <Vb , and V 1 <Vc (a) 
 V 1 <Va, V 1 >Vb , and V 1 <Vc (b) 
 V 1 <Va, V 1 <Vb , and V 1 >Vc (c), or 
 V 1 <Va, V 1 <Vb , and V 1 <Vc (d) when the second state is configured, voltages satisfy the following inequality set: 
 V 1 >Va, V 1 >Vb , and V 1 <Vc when the third state is configured, voltages satisfy the following inequality set are applied: 
 V 1 >Va, V 1 <Vb , and V 1 >Vc.