1. A non-volatile memory cell, comprising: a bottom electrode; an electrically-resistive switching layer above the bottom electrode that is at least in part permeable to movement of current-carrying particles within the electrically-resistive switching layer; a particle donor layer above the electrically-resistive switching layer that provides the current-carrying particles to the electrically-resistive switching layer in response to a stimulus, wherein the particle donor layer has an electrical resistivity of about 0.5 milliohm (mohm)-centimeter (cm) or greater; and a top electrode, wherein: the top electrode, particle donor layer, electrically-resistive switching layer and bottom electrode are disposed electrically in serial.