1. A method for programming a non-volatile resistive switching memory device, comprising: providing a switching device, the switching device comprising a first electrode, a switching material overlying the first electrode, a second electrode comprising at least a metal material overlying the switching material and a resistive material disposed between the first electrode and the switching material, the resistive material having an ohmic characteristic and being characterized by a resistance substantially the same as an on state resistance of the switching device; and applying a first voltage pulse to the switching device to cause a change of state of the switching device from a first state to a second state, the change of state being free from a time delay associated with an RC constant from a resistive element and being free from a parasitic capacitance coupled to the switching device.