1. A method, comprising: identifying two or more defective word lines within a memory block, the two or more defective word lines correspond with initial defects that were formed during manufacturing of the memory block; detecting that the two or more defective word lines correspond with benign word line defects within the memory block in response to identifying the two or more defective word lines; allocating the memory block to a small fragment block pool in response to detecting that the two or more defective word lines correspond with benign word line defects within the memory block, each memory block allocated to the small fragment block pool includes at least one word line defect; acquiring data to be written to the memory block; and writing the data to the memory block subsequent to allocating the memory block to the small fragment block pool, the writing the data includes identifying one or more data fragments associated with the memory block, the identifying the one or more data fragments includes identifying a first defective word line of the two or more defective word lines and a second defective word line of the two or more defective word lines, the identifying the one or more data fragments includes identifying a set of contiguous word lines positioned between neighboring word lines of the first defective word line and the second defective word line, the writing the data includes writing the data to memory cells connected to the set of contiguous word lines.