1. A device having a resistive switching device, comprising: a semiconductor substrate; a plurality of CMOS devices formed upon the semiconductor substrate; an insulating layer disposed upon the plurality of the CMOS devices; and a resistive switching device disposed upon the insulating layer and coupled to at least a CMOS device of the plurality of CMOS devices, wherein the resistive switching device comprising: a first wiring structure disposed upon the insulating layer comprising a first metal material; a buffer material disposed adjacent to and touching the first wiring structure; a non-stoichiometric switching material disposed adjacent to and touching the buffer material, wherein the non-stoichiometric switching material comprises a material having a plurality of non-stoichiometric defect sites; a second wiring structure disposed and touching the non-stoichiometric switching material having at least a portion comprising a second metal material having a plurality of metal particles; wherein at least some metal particles derived from the plurality of metal particles of the second wiring structure are removably disposed within non-stoichiometric defect sites from the plurality of non-stoichiometric defect sties; and wherein the buffer material completely separates the first wiring structure and the non-stoichiometric switching material, and wherein the buffer material is substantially free from metal particles from the second wiring structure.