1. A memory architecture comprising: a plurality of transistors arranged to form a bit cell, said bit cell comprising a first transistor, a second transistor, a third transistor and a fourth transistor configured to store a bit of data; a fifth transistor having a gate coupled to a Data Bar (DB) signal, said fifth transistor having a drain coupled to a drain of said first transistor; a sixth transistor having a gate coupled to a Data (D) signal, a drain coupled to a drain of said third transistor and a source coupled to a source of said fifth transistor; a seventh transistor having a gate coupled to said drain of said sixth transistor, and a source coupled to a ground or VSSCOL signal; an eighth transistor having a gate coupled to a Word Line (WL) signal, a source coupled to a drain of said seventh transistor and a drain coupled to a Read Bit Line (RBL) signal; a ninth transistor having a gate coupled to the Word line (WL) signal, a source coupled to said ground and a drain coupled to said source of said fifth transistor.