1. A method for fabricating a resistive switching memory device, comprising: depositing a metallic layer on a lower electrode disposed on a substrate, wherein the lower electrode comprises a silicon material and the metallic layer comprises a metal selected from the group consisting of hafnium, zirconium, alloys thereof, and combinations thereof; forming a metal oxide layer from an upper portion of the metallic layer during an oxidation process which comprises: heating the substrate to an oxidizing temperature within a range from about 300° C. to about 600° C.; and exposing the metallic layer to an activated oxygen source; and subsequently forming a metal silicide layer from a lower portion of the metallic layer by heating the substrate to an annealing temperature within a range from greater than 600° C. to about 850° C. during a silicidation process.