1. A monolithic three-dimensional memory device, comprising: a repeating stack of instances of a repetition unit comprising an insulating layer, a oxygen-scavenging material portion, and an electrically conductive word line, wherein the repeating stack is located over a substrate, and the oxygen-scavenging material portion comprises a material having a greater affinity to oxygen than a material of the electrically conductive word line; at least one non-volatile memory element layer including oxygen-scavenged non-volatile memory element portions and non-scavenged non-volatile memory element portions; at least one bit line extending along a direction of repetition in the repeating stack; and at least one non-linear element material layer located between the at least one bit line and the at least one non-volatile memory element layer.