1. A method for repairing a memory device, wherein the memory device includes a plurality of memory cells to store binary data digits, each of the plurality of memory cells belonging to at least a first group and a second group, the method comprising: identifying memory cells in the memory device that fail as failing memory cells; identifying when a selected one of the failing memory cells belongs to both the first group including two failing memory cells and the second group including two failing memory cell; replacing the selected one of the failing memory cells with a repair memory cell when the selected one of the failing memory cells belongs to both the first group and the second group; and correcting binary data digits read from a plurality of the failing memory cells other than the selected one of the failing memory cells according to an error correction code.