1. A multi-purpose static random-access-memory cell controllable by a non-volatile memory cell comprising: a static random-access-memory cell coupled between first and second complimentary static random-access-memory cell bit nodes; a static random-access-memory cell word line; first and second complimentary static random-access-memory cell bit lines respectively coupled to the first and second complimentary static random-access-memory cell bit a first means for programming the static random-access-memory cell utilizing the static random-access-memory cell word line to selectively enable the first and second complementary static random-access-memory cell bit lines; a configuration word line; first and second complimentary configuration bit lines respectively coupled to the first and second complimentary static random-access-memory cell bit a second means for programming the static random-access-memory cell utilizing the configuration word line to selectively enable the first and second complimentary configuration bit lines; a non-volatile memory clock line; a third means for programming the static random-access-memory cell utilizing the non-volatile memory clock line to selectively enable programming the static random-access-memory cell to a value determined by an output of the non-volatile memory.