1. A method for forming a static pass transistor, comprising: forming a source region and a drain region in a horizontal substrate; forming a depletion mode channel in the horizontal substrate between the source and the drain regions; forming a number of vertical gates above different portions of the depletion mode channel; wherein forming a number of vertical gates includes forming at least one of the vertical gates separated from the depletion mode channel by a first oxide thickness (t 1 ); and wherein forming a number of vertical gates includes forming at least one of the vertical gates separated from the depletion mode channel region by a second oxide thickness (t 2 ).