1. A storage element comprising: memory cells comprising resistance changing elements, wherein said resistance changing elements have recording layers provided between two electrodes; wherein resistance values of said recording layers are reversibly changed with application of electric potential with different polarities to said two electrodes; wherein at least part of a layer constructing said recording layers of the resistance changing elements is formed commonly with the same layer in at least one adjacent memory cell; and wherein said recording layers have a laminated layer structure comprising an ion source layer, wherein the ion source layer comprises at least one element selected from a group consisting of Ag, Cu, and Zn and at least one element selected from a group consisting of S, Se, and Te and a high resistance layer formed of an insulator or a semiconductor.