1. A memristor comprising: a first electrode having a first surface; at least one electrically conductive nanostructure provided on the first surface, wherein the at least one electrically conductive nanostructure is relatively smaller than a width of the first electrode; a switching material positioned upon said first surface, wherein the switching material covers the at least one electrically conductive nanostructure; and a second electrode positioned upon said switching material substantially in line with the at least one electrically conductive nanostructure, wherein an active region in the switching material is formed substantially between the at least one electrically conductive nanostructure and the first electrode.