1. A method for programming in a 3D stacked non-volatile memory device, comprising: programming an initial set of memory cells using a respective starting program voltage, each memory cell of the initial set of memory cells is in a respective NAND string of an initial set of NAND strings; determining a count of program loops used in the programming of the initial set of memory cells; and programming a remaining set of memory cells using a respective starting program voltage which is determined based on the count, each memory cell of the remaining set of memory cells is in a respective NAND string of a remaining set of NAND strings, the initial set of memory cells and the remaining set of memory cells are arranged along respective memory holes at a common word line layer in the 3D stacked non-volatile memory device, wherein: the count of program loops is a minimum number of program loops needed to cause threshold voltages of at least a specified number of memory cells of the initial set of memory cells to exceed a verify level for programming a lower page of data in a multi-pass programming operation; and the respective starting program voltage which is determined based on the count is for programming operation.