1. A method for operating a memory cell comprising a two-terminal non-volatile memory device in electrical series with a filamentary volatile resistive switching device, comprising: applying a first voltage magnitude to the memory cell, wherein the first voltage magnitude is selected to cause the filamentary volatile resistive switching device to enter a low resistance state; applying a second, non-zero voltage magnitude to the memory cell smaller than the first voltage magnitude and lower than an activation threshold voltage of the filamentary volatile resistive switching device; and sensing a data value stored by the two-terminal non-volatile memory device in response to applying the second, non-zero voltage magnitude.