1. A resistive memory device, comprising: a resistive memory cell; and a read/program circuit configured to program the resistive memory cell from a first state to a second state, wherein the read/program circuit reads a resistance in the first state of the resistive memory cell and adjusts a compliance current supplied to the resistive memory cell in the first state according to the read resistance during the program operation, wherein the read/program circuit comprises a program voltage generator configured to supply a program voltage to the resistive memory cell, and a current limiter connected to a bitline of the resistive memory cell and configured to supply the compliance current to the resistive memory cell, wherein the compliance current of the resistive memory cell increases proportional to the read resistance, and limits maximum current flowing to the resistive memory cell.