1. A method for determining programming parameters for programming a resistive random access memory switching from an OFF state to an ON state, the memory comprising first and second electrodes separated by a layer of an electrically insulating material, and switching from the OFF state to the ON state by applying a threshold voltage between the first and second electrodes, the current flowing in the memory after switching from the OFF state to the ON state being limited by a current limiting device, the method comprising: determining retention curves representing an increase in the ON state resistance as a function of time, each retention curve being determined for a given programming temperature and a given current limitation; determining a retention failure time for each of the retention curves; determining curves representing a decrease in the retention failure time as a function of the programming temperature, each curve being determined for a given current limitation; for at least one given programming temperature, determining, from the curves representing the decrease in the retention failure time as a function of the programming temperature, a current limiting value to be applied to the resistive random access memory in order to obtain a target retention failure time.