1. A contact structure for a semiconductor device comprising: a substrate having a conductive portion; a first insulative layer disposed on said conductive portion; a contact hole formed in said first insulative layer and ex-posing at least a portion of said conductive portion, said contact hole having a bottom surface and a sidewall surface; a layer of material disposed on said bottom surface and said sidewall surface, said layer of material partially filling said contact hole, wherein said layer of material comprises one of a conductive material or a memory material; a second insulative layer disposed on said layer of material within said contact hole, wherein a peripheral portion of said layer of material is exposed.