1. A method for operating a non-volatile storage system, comprising: generating a plurality of bit line voltage options associated with a read operation; generating a plurality of bit line current options associated with the read operation; determining a first control bit, the determining a first control bit includes acquiring a bit line address associated with a memory cell and determining whether the memory cell is located at a far end of a word line connected to the memory cell based on the bit line address; selecting a first bit line voltage of the plurality of bit line voltage options based on the first control bit; selecting a first bit line current of the plurality of bit line current options based on the first control bit; determining a state of the memory cell by applying the first bit line voltage and the first bit line current to a bit line connected to the memory cell; and outputting data associated with the state of the memory cell.