1. A method, comprising: determining whether a first address of a read-only memory array of a non-volatile memory device matches an address in a first trap address register, wherein the non-volatile memory device further comprises: a phase change memory fuse array comprising replacement firmware instructions, wherein the phase change memory fuse array comprises phase change memory cells formed of a memory cell material comprising a crystalline state and an amorphous, non-crystalline state; and a random access memory array comprising at least one replacement firmware instruction; and fetching the at least one replacement firmware instruction from the random access memory array in response to the first address of the read-only memory array matching the address in the first trap address register.