1. A resistance variable memory cell, comprising: a stack structure including a resistance variable material formed between a first electrode and a second electrode; a heat sink comprised of a thermally conductive material located between a stack structure associated with an adjacent resistance variable memory cell; and a dielectric material formed on a first sidewall of the stack structure and on a first sidewall of the stack structure associated with the adjacent resistance variable memory cell; wherein the dielectric material is a continuous encapsulation layer formed over the stack structure and the stack structure associated with the adjacent resistance variable memory cell; and wherein the heat sink is located in a gap formed by the continuous encapsulation layer.