1. A system for reading memory, elements within a crossbar array, said crossbar array comprising a set of row lines intersecting a set of column lines, memory elements being disposed at intersections between said row lines and said column lines, the system comprising: a current mirror, an input of said current mirror being selectively connected through switching circuitry to a column line of said set of column lines; an error voltage supply selectively connected through additional switching circuitry to said row lines, wherein an error voltage produced by said error voltage supply is matched to a voltage formed across said current mirror; and a sense voltage supply for selectively applying a sense voltage to one of said row lines; in which said sense voltage and said error voltage create an output current of said current mirror.