1. A hybrid resistive memory device, comprising: at least two resistive memory units, wherein at least one of the at least two resistive memory units is a resistive memory unit configured to operate in a long-term plasticity state, wherein at least one of the at least two resistive memory units is a resistive memory unit configured to operate in a short-term plasticity state, and wherein the at least two resistive memory units are configured to attain the short-term plasticity state and the long-term plasticity state from a gradual increase in voltage from a power supply unit to the at least two resistive memory units.