1. A method for read measurement of a plurality N of resistive memory cells having a plurality K of programmable levels, the method comprising: applying a first read voltage to the plurality N of resistive memory cells; measuring a first read current due to the first read voltage; determining a second read voltage based on the first read current measured at the plurality N of resistive memory cells; determining a target read current for the plurality N of resistive memory cells; applying the second read voltage to the plurality N of resistive memory cells; and obtaining a second read current.