1. A nanotube memory device, comprising: a first and second electrodes; a switching element having a predetermined pattern comprising a porous network of non-woven nanotubes wherein at least a first nanotube is in electrical communication with the first electrode and at least a second nanotube is in electrical communication with the second electrode, wherein said porous network of non-woven nanotubes is capable of switching between at least two non-volatile resistive states; and a protective barrier to protect the switching element.