1. A nonvolatile memory device comprising: a plurality of spaced apart doped lines disposed in a substrate; a plurality of spaced apart upper electrodes crossing over the doped lines such that cross points are formed where the upper electrodes overlap the doped lines; a plurality of lower electrodes, a respective one of which is disposed at a respective cross point between the doped lines and the upper electrodes; a binary metal oxide data storage material layer between the upper electrodes and the lower electrodes; and doped regions between the lower electrodes and the doped lines and forming diodes together with the doped lines, the doped regions having an opposite conductivity to the doped lines.