1. A combined manufacturable wafer and test device for measuring a tunneling-magnetoresistance property of a tunneling-magnetoresistance, sensor-layer structure, said combined manufacturable wafer and test device comprising: a tunneling-magnetoresistance, sensor-layer structure disposed on a substrate; and a plurality of partially fabricated tunneling-magnetoresistance sensors, at least one of said partially fabricated tunneling-magnetoresistance sensors disposed at one of a plurality of first locations; wherein said test device is disposed on said substrate at a second location different from said plurality of first locations; and wherein said test device allows measurement of said tunneling-magnetoresistance property of said tunneling-magnetoresistance, sensor-layer structure using a current-in-plane-tunneling technique.