1. A method of forming a chalcogenide-based programmable conductor memory device, comprising: forming a first electrode; forming an aluminum layer over said first electrode; anodizing said aluminum layer such that about one nanochannel is formed therein to said first electrode; depositing a layer of nanoparticle material over said anodized aluminum layer, within said nanochannel, and over said first electrode where exposed in said nanochannel; selectively removing said anodized aluminum layer and the nanoparticle material thereover to leave about one nanoparticle on said first electrode; providing a first germanium selenide layer over said first electrode and said nanoparticle; and providing a second electrode over said first germanium selenide layer.