1. A method of forming a memory device, the method comprising: forming a generally conical catalytic structure comprising a base coupled to a conductive pad and a tip; and catalyzing formation of only a single nanowire extending from the tip of the generally conical catalytic structure to define an electrode of the memory device comprising the generally conical catalytic structure, the conductive pad and the single nanowire, wherein an effective cross-sectional area of the tip facilitates formation of only the single nanowire thereon.