1. A nonvolatile memory device comprising: a substrate; a plurality of first wires which are formed on the substrate to extend in parallel with each other in a first direction; a first interlayer insulating layer formed over the substrate and the plurality of first wires; a plurality of second wires which are formed on the first interlayer insulating layer to extend in parallel with each other in a second direction crossing the first direction when viewed in a thickness direction of the first interlayer insulating layer; a second interlayer insulating layer which is formed over the first interlayer insulating layer and the plurality of second wires; and a plurality of third wires which are formed on the second interlayer insulating layer to extend in parallel with each other in a third direction crossing the second direction when viewed in a thickness direction of the second interlayer insulating layer; wherein a plurality of first through-holes are formed to penetrate the first interlayer insulating layer at three-dimensional cross points of the first wires and the second wires, respectively; and wherein a plurality of second through-holes are formed to penetrate the second interlayer insulating layer at three-dimensional cross points of the second wires and the third wires, respectively; the nonvolatile memory device further comprising: first filling constituents formed inside the first through-holes, respectively; and second filling constituents formed inside the second through-holes, respectively; wherein the first filling constituent is configured to constitute each of first diode elements, or the first filling constituent and the first wire are configured to constitute each of the first diode elements; the second filling constituent is configured to constitute each of second diode elements, or the second filling constituent and the third wire are configured to constitute each of the second diode elements; and each of the second wires has a structure in which the first resistance variable layer, the conductive layer and the second resistance variable layer are stacked together in this order; a longitudinal length of each of the second wires is shorter than a longitudinal length of each of the first wires and a longitudinal length of each of the third wires; a wire resistance of the first wires and a wire resistance of the third wires are lower than a wire resistance of the second wires; the conductive layer of each of the second wires is made of precious metal or tungsten; and the first wires and the third wires are made of aluminum or copper.