1. A resistive switching memory cell, comprising: a first metal layer comprising a first electrical conductive metal; a second metal layer comprising a second electrical conductive metal; a resistive switching material layer situated between the first metal layer and the second metal layer comprising a switching material that is an electrical insulator; a first semiconductor layer situated between the resistive switching material layer and the first metal layer comprising a lightly doped semiconductor material, wherein the first semiconductor layer is in contact with the resistive switching material layer and has a resistivity that measures between about 0.2 ohm-centimeter and about 20 ohm-centimeter; and a second semiconductor layer situated between the first semiconductor layer and the first metal layer comprising a highly doped semiconductor material, wherein the second semiconductor layer is between 5 nanometers and 100 nanometers thick and the highly doped semiconductor material comprises at least one of silicon, silicon germanium or a derivative of silicon germanium in a poly-crystalline phase.