1. A method for forming a non-volatile memory device, comprising: depositing a first dielectric layer overlying a surface region of a substrate; forming a first wiring structure overlying the first dielectric material; forming a junction layer overlying the first wiring structure; forming a resistive switching layer overlying the junction layer by converting an upper region of the junction layer to the resistive switching layer; subjecting a stack of layers comprising at least the junction layer and the resistive switching layer to a first patterning and etching process to form a first pillar-like structure comprising a portion of the junction layer and a portion of the resistive switching layer, the first pillar-like structure comprising a surface region of the resistive switching layer; forming a second dielectric layer having a controlled thickness overlying the surface region of the resistive switching layer; forming an opening in a portion of the second dielectric layer to expose a portion of the surface region of the resistive switching layer; forming a first metal layer comprising first metal material overlying at least the portion of the surface region of the resistive switching layer within the opening; forming a silver layer overlying the portion of the surface region of the resistive switching layer, wherein the silver layer is derived from a solution comprising at least a silver species in a reaction bath, wherein the solution comprises an alkaline pH to cause silver species of the solution to be reduced by the first metal material, and wherein the first metal layer is solubilized while forming the silver layer; and forming a second wiring structure overlying the silver layer.