1. A non-volatile memory device comprising: a first memory string including a plurality of non-volatile memory cells coupled between a common source line and a first bit line; a first string selection transistor coupled between the common source line and the first memory string; and a precharge drive circuit configured to provide a first voltage to a gate terminal of the first string selection transistor and provide a second voltage to the common source line during a precharge operation, wherein the first string selection transistor provides the second voltage to the first memory string in response to the first voltage in order to precharge the first bit line, and wherein the first memory string is one of a plurality of memory strings in the non-volatile memory device.