1. A method comprising: forming a doped semiconducting region; applying a voltage with at least one control gate across a scanning region for positioning a depletion region of the semiconducting region within the semiconducting region, in order to access a conducting channel that is defined by the depletion region through the scanning region, wherein the conducting channel selectively connect at least a first conducting line coupled to the scanning region to at least a second conducting line coupled to the scanning region, wherein at least one of the first conducting line and the second conducting line comprises a nano-scaled line having a width between approximately 5 angstroms and 1,000 angstroms, wherein at least one of the first conducting line and the second conducting line comprises a micro-scaled line having a width that exceeds approximately 1,000 angstroms, and wherein a location of the conducting channel is movable across the scanning region; and substantially and selectively depleting a selected region of a doped semiconducting scanning in order to limit a passage of electrons through the scanning region, to the conducting channel.