1. A method of forming an Si-O containing coating on an electronic substrate comprising: (a) applying a coating comprising hydrogen silsesquioxane resin on an electronic substrate; (b) heating the coated substrate at a temperature between about 75.degree. and about 400.degree. C. in an atmosphere consisting essentially of ammonia and moisture for at least about 15 minutes; (c) heating the coated substrate resulting from step (b) at a temperature between about 75.degree. and about 400.degree. C. in an atmosphere consisting essentially of substantially anhydrous ammonia for at least about 15 minutes; and (d) heating the coated substrate resulting from step (c) to a temperature of at least about 150.degree. C. in an oxygen containing atmosphere for a time between 30 minutes and 72 hours to anneal the coating.