1. A method of operating a monolayer deposition (MLD) processing system comprising: positioning a plurality of wafers in a processing chamber; performing a first precursor process, wherein the first precursor process is controlled by a first process recipe having a first set of intelligent set points, the first set of intelligent set points establishing at least one of a first flow rate for a first precursor-containing gas during a first time period and a second flow rate for the first precursor-containing gas during a second time period; performing a first purge process, wherein the first purge process is controlled by a second process recipe having a second set of intelligent set points; performing a second precursor process, wherein the second precursor process is controlled by a third process recipe having a third set of intelligent set points, the third set of intelligent set points establishing at least one of a third flow rate for a second precursor-containing gas during a third time period and a fourth flow rate for the second precursor-containing gas during a fourth time period; performing a second purge process, wherein the second purge process is controlled by a fourth process recipe having a fourth set of intelligent set points; and repeating the performing steps until a film having a desired thickness is deposited on the plurality of wafers.