1. A method comprising: identifying a region on a substrate; forming, in the region on the substrate, local bit line decoders, control lines, and switching structures; forming a cross-point memory array over the region, the cross-point memory array comprising: X-lines; Y-lines, wherein the X-lines and the Y-lines are disposed substantially parallel to the substrate; groups of Y-line portions disposed substantially perpendicular to the substrate, each Y-line portion within a group arranged electrically in parallel with the other Y-line portions in the same group, and each group comprising a plurality of Y-line portions coupled via a respective switching structure to a corresponding one of the Y-lines; and memory elements formed electrically between a subset of the X-lines and a group of the Y-line portions; coupling at least one of the local bit line decoders to the switching structures, the at least one of the local bit line decoders being disposed on the substrate below the cross-point memory array and configured to decode a received address to select a corresponding Y-line portion via one of the control lines; and applying a select voltage signal having a negative voltage to at least one of the Y-lines during a program operation of at least one of the memory elements associated with the at least one of the Y-lines.