1. A memory cell comprising: a top pinned ferromagnetic layer; a bottom pinned ferromagnetic layer; and a free ferromagnetic layer arranged between the top pinned ferromagnetic layer and the bottom pinned ferromagnetic layer, wherein the memory cell is configured such that a spin torque effect on the free ferromagnetic layer from electrons from the bottom pinned ferromagnetic layer is opposite to a spin torque effect on the free ferromagnetic layer from electrons from the top pinned ferromagnetic layer upon activation.