1. A method for forming a programmable fuse comprising: providing a wafer including a substrate of bulk semiconductor material; forming a first contact structure overlying the substrate; forming a second contact structure overlying the substrate; wherein the first contact structure and the second contact structure are electrically coupled via programmable material located in an area of the wafer, the area of wafer including a layer of monocrystalline silicon germanium over the substrate; wherein there is no intervening dielectric material between the layer of monocrystalline silicon germanium and the substrate.