1. In a method of fabricating an integrated circuit structure having a thin metal layer deposited on an insulating layer or substrate, the step of planarizing the metal layer by heating the metal layer to momentarily melt the layer for a time sufficient to substantially eliminate topographic variations of less than a preselected spatial period to produce a flat surface on the metal layer without reacting or alloying the metal layer with the insulating layer or substrate, the planarizing occuring prior to patterning the layer.