1. A method to form a resistive random access memory (RRAM), comprising: a. forming a first metal electrode layer; b. depositing an insulator above the metal electrode layer and etching the insulator to expose one or more metal portions; c. depositing a Pr 1-X Ca X MnO 3 (PCMO) layer above the insulator and the metal portions, wherein X is between approximately 0.3 and approximately 0.5; d. forming one or more self-aligned RRAM cells above the first metal electrode; and e. depositing a second metal electrode layer above the PCMO layer.