1. A method of forming a non-volatile resistance variable device, comprising: forming a first electrode over a substrate; forming a dielectric layer over the first electrode; forming an opening having sidewalls into the dielectric layer to the first electrode in a manner which produces at least one surface striation in at least a portion of the opening sidewalls; forming voltage or current controlled resistance setable semiconductive material within the opening in electrical connection with the first electrode, said material having a surface at least a portion of which extends along the at least one dielectric layer striation to form at least one surface striation in the surface portion; and forming a second electrode in electrical connection with the voltage or current controlled resistance setable semiconductive material received within the opening.