1. A solid electrolyte random access memory (CBRAM) cell, comprising: a solid electrolyte block comprising at least three solid electrolyte contacting areas; electrodes electrically connected to the solid electrolyte contacting areas; and conductive paths that are formable, eraseable or detectable within the solid electrolyte block based on voltages applied between the solid electrolyte contacting areas, wherein the contacting areas are spatially separated from each other such that conductive paths starting from different solid electrolyte contacting areas or ending at different solid electrolyte contacting areas do not overlap each other.