1. A storage device, comprising: a first high-k oxide metal gate MOS transistor having its source tied to a sense node, and for providing a reference resistance of the device; and a second high-k oxide metal gate MOS transistor having a breakdown voltage and its drain tied to the sense node, and for providing a memory resistance of the device; wherein the storage device is programmed by applying a programming bias that is lower than the breakdown voltage to the gate of the second high-k oxide metal gate MOS transistor, thereby causing a sense node voltage level increase that can be detected during sensing.