1. A method for forming a non-volatile memory device using a low temperature process, the low temperature ranging from about 400 Degrees Celsius to about 450 Degrees Celsius, comprising: providing a semiconductor substrate having a surface region; forming a first dielectric material overlying the surface region; forming a first wiring structure overlying the first dielectric material; depositing a first silicon material having a substantially amorphous characteristic overlying at least the first wiring structure, the first silicon material being substantially undoped; depositing an aluminum containing material overlying the first silicon material at a deposition temperature of about 450 Degrees Celsius or lower; subjecting at least the aluminum containing material and the first silicon material to an anneal process at an anneal temperature of about 450 Degrees Celsius or lower to convert at least a portion of the first silicon material to a polycrystalline silicon material having a p+ impurity characteristic, wherein the p+ impurity characteristic is caused by an aluminum species from the aluminum containing material occupying a site within a spatial region of the first silicon material; depositing a resistive switching material comprising an amorphous silicon material overlying the polycrystalline silicon material; and forming a second wiring structure comprising a metal material overlying the resistive switching material, wherein a resistive switching device includes at least the first wiring structure, the polycrystalline silicon material, the resistive switching material, and the second wiring structure.