1. A method of writing to a tunnel junction of a thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus, the thermal spin torque transfer MRAM apparatus including a magnetic tunnel junction having a reference layer, a tunnel barrier layer, and a free layer, the free layer comprising a first layer having a first Curie temperature and a second layer having a second Curie temperature, the method comprising: applying a write current to the magnetic tunnel junction to heat the magnetic tunnel junction to a write temperature less than the first Curie temperature and greater than the second Curie temperature.