1. A method of operating a memory, comprising: applying a multi-step pass voltage to a plurality of memory cells selected for a programming operation; applying a programming pulse to the plurality of memory cells selected for the programming operation after applying a voltage level of a particular step of the multi-step pass voltage to the plurality of memory cells selected for the programming operation; applying a particular voltage level to any data lines coupled to a first subset of memory cells of the plurality of memory cells selected for the programming operation prior to applying a voltage level of a certain step of the multi-step pass voltage; and applying the particular voltage level to any data lines coupled to a second subset of memory cells of the plurality of memory cells selected for the programming operation only after applying the voltage level of the certain step of the multi-step pass voltage.