1. A method for making a programmable structure on a semiconductor substrate having a first dielectric layer, comprising: plasma patterning a first metallization layer over the first dielectric layer; forming a second dielectric layer over the first metallization layer and the first dielectric layer; forming a plurality of tungsten plugs in the second dielectric layer, such that each of the plurality of tungsten plugs are in electrical contact with the first metallization layer; plasma patterning a second metallization layer over the second dielectric layer and the plurality of tungsten plugs, such that at least a gap over each of the tungsten plugs is not covered by the second metallization layer; applying a programming electron dose to a portion of the second metallization layer; and submersing the semiconductor substrate into a basic solution to remove each of the plurality of tungsten plugs except for a tungsten plug that is in electrical contact with the portion of the second metallization layer that received the applied programming electron dose.