1. A method for forming a resistive memory cell within a memory array, the method comprising: forming a patterned stopping layer having openings on a first metal layer formed on a substrate; forming a bottom electrode into the openings of the patterned stopping layer; forming a resistive memory layer over the patterned stopping layer and the bottom electrode including: a metal oxide layer; and a top electrode layer; and patterning the resistive memory layer so that the top electrode layer acts as a bit line within the memory array and a top electrode of the resistive memory cell.