1. A nonvolatile memory device comprising: a plurality of spaced apart doped lines disposed in a substrate; a plurality of spaced apart upper electrodes crossing over the doped lines such that cross points are formed where the upper electrodes overlap the doped lines; a plurality of lower electrodes, a respective one of which is disposed at a respective cross point between the doped lines and the upper electrodes; a binary metal oxide data storage material layer between the upper electrodes and the lower electrodes; doped layer patterns between the lower electrodes and the doped lines and forming diodes together with the doped lines, the doped layer patterns having an opposite conductivity to the doped lines, wherein the doped layer patterns are disposed at the cross points on the doped lines, respectively; and an insulating layer in spaces between the binary metal oxide layer and the substrate, wherein the insulating layer surrounds sides of the doped layer patterns and sides of the lower electrodes, wherein the binary metal oxide data storage material layer comprises a binary metal oxide consisting of a compound having the chemical formula of M x O y , wherein the characters “M”, “O”, “x”, and “y” refer to a metal, oxygen, a metal composition ratio, and an oxygen composition ratio, respectively, and the metal “M” is a transition metal or aluminum.