1. A silicon-controlled rectifier apparatus, comprising a substrate upon which a low-voltage triggered silicon-controlled rectifier is configured; and a plurality of triggering components formed upon said substrate and integrated with said low-voltage triggered silicon-controlled rectifier, wherein said plurality of triggering components are inserted into said low-voltage triggered silicon-controlled rectifier in order to permit said low-voltage triggered silicon-controlled rectifier to protect against electrostatic discharge during human-body model (HBM) and charged-device model (CDM) stress events.