1. A memory device comprising: a sense amplifier including a first input node and a second input node and configured to output a signal based on a difference between input values at the first input node and the second input node; a first path including a memory cell to be selectively connected to the first input node and provided between the first input node and a ground node; and a second path including a reference cell to be selectively connected to the second input node and provided between the second input node and the ground node, wherein the input value at the second input node of the sense amplifier is changed such that a change amount of an input value between two different temperatures T 2 and (T 2 +ΔT) in a second temperature region, at a temperature higher than in a first temperature region, of the memory cell becomes larger than a change amount of an input value between two different temperatures T 1 and (T 1 +ΔT) in the first temperature region of the memory cell, where ΔT is an increase amount of the temperature.