1. A method for read measurement of a plurality N of resistive memory cells having a plurality K of programmable levels, the method comprising: applying a first read voltage to the plurality N of resistive memory cells; measuring a first read current due to the first read voltage; determining a second read voltage based on the first read current measured at the plurality N of resistive memory cells; determining a target read current for the plurality N of resistive memory cells; applying the second read voltage to the plurality N of resistive memory cells; obtaining a second read current; determining a target read current for each of the plurality K of programmable levels mapping the target read current for each of the plurality K of programmable levels; and determining the second read voltage based on the first read current and the target read current for each of the plurality K programmable levels; wherein mapping the target read current for each of the plurality K of programmable levels comprises: dividing a read current space for the first read current into a plurality K of distinct regimes; associating the target read current for each of the plurality K of programmable levels with the plurality K of distinct regimes; allocating the first read current to the plurality K of distinct regimes; and mapping the target read current for each of the plurality K of programmable levels and the target read current for the plurality N of resistive memory cells with the plurality K of distinct regimes.