1. A non-volatile storage system, comprising: a three-dimensional non-volatile memory including a target memory cell, the three-dimensional non-volatile memory is monolithically formed in one or more physical levels of memory cells having active areas disposed above a substrate; and one or more managing circuits in communication with the three-dimensional non-volatile memory, the one or more managing circuits determine a reliability value associated with whether the target memory cell is within a high boosting environment, the one or more managing circuits perform a first sensing of the target memory cell between a highest programming state of a plurality of programming states and a second highest programming state of the plurality of programming states, the one or more managing circuits perform a second sensing of the target memory cell between a first substate of the highest programming state and a second substate of the highest programming state, the one or more managing circuits determine a stored data value based on the first sensing and the second sensing, the one or more managing circuits determine the stored data value based on the reliability value.