1. A method of forming a memory cell, comprising: forming a first electrode over a semiconductor substrate; forming a passive layer over the first electrode, the passive layer comprising copper sulfide; forming an electrically non-conducting material layer with ordered porosity over the passive layer; forming an active material inside the ordered porosity of the electrically non-conducting material layer; forming copper nanotubes in the ordered porosity of the electrically non-conducting material layer; and forming a second electrode over to the active material.