1. A method for planarizing a surface, the method comprising: depositing aluminum or an aluminum alloy; depositing a second conductive material on the aluminum or aluminum alloy; patterning and etching the second conductive material and the aluminum or aluminum alloy to form patterned features; depositing a dielectric material over and between the patterned features; and polishing by a CMP process to coexpose the second conductive material and the dielectric material at a planarized surface, the CMP process adapted to remove the dielectric material, wherein, during the polishing step, a removal rate of the second conductive material is between 50 percent and 150 percent of a removal rate of the dielectric fill.