1. A memory device comprising: a first memory cell which includes a chalcogenide glass material containing a fast ion conductor and cathode and anode electrodes spaced apart and in contact with said fast ion conductor material; a second memory cell which includes a chalcogenide glass material containing a fast ion conductor and cathode and anode electrodes spaced apart and in contact with said fast ion conductor material; said first and second memory cells being in contact with each other such that they share a common anode.