1. A method comprising: reading memory cells of a memory array to determine a reading parameter distribution of said memory array subsequent to a program or erase pulse applied to said memory cells; determining an expected post-program-verify (PV) or post-erase-verify (EV) reading parameter distribution of said memory array based, at least in part, on said determined reading parameter distribution; reading said memory cells of said memory array to determine a measured post-PV or post-EV reading parameter distribution of said memory array subsequent to a PV or EV process applied to said memory cells; and determining a PV or EV-induced reading parameter distribution spread based, at least in part, on a comparison between said measured and said expected post-PV or post-EV reading parameter distributions.