1. A method for fabricating an integrated circuit resistive switching memory element comprising: electrolessly depositing first and second layers of conductive material on a substrate, the first and second layers having different rates of oxidation; and forming a resistive switching metal oxide layer from the second layer using an oxidation process, such that the second layer of conductive material is substantially oxidized and the first layer of conductive material at least partially forms a conductor, the resistive switching metal oxide layer forming an ohmic contact with the conductor.