1. A method of manufacturing a semiconductor device, comprising: providing an electrical connection to a well of a MOS transistor of a static random access memory (SRAM) cell; applying a predetermined voltage to said well using said connection to cause a threshold voltage (V t ) of said transistor to change; characterizing a test value of a reliability characteristic of said semiconductor device while applying said predetermined voltage; and altering an SRAM parameter in response to said characterizing to modify said reliability characteristic.