1. An electronic device yield prediction system for predicting manufacturing yield of a first electronic device, comprising: a first database, which stores product characteristics, including at least a chip size, that are factors characterizing each kind of electronic device of a plurality of electronic device including a first and second electronic device, a second database, which stores an average fault ratio prediction model that derives an average fault ratio indicating a proportion of defects causing a failure of an electronic device from defects occurring at a time of manufacturing the electronic device corresponding to a circuit pattern of each layer of the electronic device, as an explanatory factor of one or more of the product characteristics, a third database, which stores a yield impact of one defect occurring on a layer corresponding to each layer of a second electronic device whose stacked layer structure of each circuit layer is identical to that of the first electronic device, whose manufacturing process of the stacked layer structure is similar to that of the first electronic device, but whose wiring pattern is different from that of the first electronic device; an electric fault density calculation unit, which calculates, using an average defect count measured at a predetermined unit of time with respect to each layer of the second electronic device and corresponding yield impact read out from the third database, an electric fault density, which is a number of electric faults per unit area, indicating a ratio of defects causing the second device to fail among defects occurring in manufacturing which is calculated at each unit of time, and which stores the electric fault density in a fourth database; an average fault ratio calculation unit, which reads out an average fault ratio prediction model corresponding to a circuit pattern of each layer of the first and the second electronic devices from the second database, reads out product characteristics of the first and the second electronic device from the first database, and calculates an average fault ratio of each layer of the first and the second electronic devices; a prediction target product electric fault density calculation unit which reads out the electric fault density of each layer of the second electronic device, calculated by the electric fault density calculation unit per each unit of time, and stored in the fourth database, calculates electric fault density of each layer of the first electronic device per each unit of time by multiplying a proportion of the average fault ratio of each layer of the first electronic device calculated by the average fault ratio calculation unit and the average fault ratio of each layer of the second electronic device; and wherein a yield calculation unit, which estimates, on a basis of a manufacturing history of a prediction target lot of the first electronic device, a period in which a corresponding layer of the prediction target lot is processed, selects an electric fault density of the corresponding layer of the first electronic device among the electronic fault densities of each layer of the first electronic device calculated at the predetermined unit of time and stored by the prediction target product electric fault density calculation unit, and calculates a prediction yield of product for a corresponding layer of the prediction target lot of the first electronic device by using the selected electric fault density and a chip size read out from the first database.