1. A non-volatile solid state resistive switching device comprising: a metal first electrode being a source of metal ions, wherein a metal of the metal first electrode and of the metal ions is selected from a group consisting of: nickel, aluminum and tungsten; a crystalline p-type silicon second electrode; and a non-crystalline amorphous silicon layer substantially free of dopants having a resistance and being positioned between and in direct contact with the first and second electrodes, wherein: the metal ions are driven into the non-crystalline amorphous silicon layer to form a conducting filament from the metal first electrode to the second electrode to alter the resistance of the non-crystalline amorphous silicon layer in response to a write voltage applied between the first and second electrodes that is greater than a first threshold electrical potential.