1. An artificial neuron semiconductor device having a three-dimensional structure comprises: a first electrode to which a clock signal is applied; a second electrode in which an output signal is generated; an insulation column; a plurality of electrode layers for receiving an electrical signal from at least one synapse circuit; and a phase change layer which is divided into at least two parts by the insulation column and is in contact with at least two side surfaces of the insulation column, wherein the phase change layer is phase-changed by the plurality of electrode layers.