1. A method of forming a non volatile memory device, comprising: providing a substrate having a surface region; forming a first dielectric material overlying the surface region of the semiconductor substrate; forming a first wiring material overlying the first dielectric material; forming a contact material comprising a doped polysilicon material overlying the first wiring material; forming a switching material comprising an amorphous silicon material overlying the contact material; subjecting the switching material to a first pattering and etching process, separating a first strip of switching material from a second strip of switching material, the first strip of switching material and the second strip of switching material being spatially oriented in a first direction; and subjecting the first strip of switching material, the second strip of switching material, the contact material, and the first wiring material to a second patterning and etching process, forming at least a first switching element from the first strip of switching material and at least a second switching element from the second strip of switching material, and a first wiring structure comprising at least the first wiring material and the contact material, the first wiring structure being extended in a second direction at an angle to the first direction.