1. A memory cell comprising: first and second opposing electrodes having material received there-between, the material comprising first and second lateral regions of different composition relative one another, one of the first and second lateral regions being received along one of two laterally opposing edges of the material, another of the first and second lateral regions being received along the other of said two laterally opposing edges of the material, at least one of the first and second lateral regions being capable of being repeatedly programmed to at least two different resistance states.