1. A semiconductor device comprising: a first conductive layer; a first insulative layer disposed on the first conductive layer, wherein the first insulative layer comprises a contact structure formed therethrough, the contact structure exposing the first conductive layer; a second conductive layer disposed on the first insulative layer and on the first conductive layer in the contact structure, the second conductive layer comprising at least one of titanium nitride, titanium, aluminum, tungsten, tungsten silicide, and copper; a second insulative layer disposed on the second conductive layer and in the contact structure, wherein the second insulative layer comprises openings to expose portions of the second conductive layer; and a conductive material disposed on the second insulative layer and in the contact structure, wherein the conductive material is in direct contact with the exposed portions of the second conductive layer.