1. An apparatus for sensing the data state of a multiple level, programmable resistive memory device, comprising: an active clamping device connected to a data leg that is selectively coupled a programmable resistive memory element, the active clamping device configured to clamp a fixed voltage, at a first node of the data leg, across the programmable resistive memory element, thereby establishing a fixed current sinking capability thereof; and a plurality of differential amplifiers, each of the plurality of differential amplifiers configured to compare a first voltage input, taken at a second node of the data leg, with a second voltage input; wherein the second voltage input for each differential amplifier comprises different reference voltages with respect to one another so as to enable each differential amplifier to detect a different resistance threshold, thereby determining a specific resistance state of the programmable resistive memory element.