1. An apparatus, comprising: a controller to retrieve data from a non-volatile memory; and an error correction module operable on the controller to: read a multiple-bit memory cell of the non-volatile memory at a first set of sense conditions comprising a multiplicity of sense conditions, the memory read comprising: determining, for a first bit of the multiple-bit memory cell, a set of reference voltages marking a respective set of transitions between logical states; and performing, for each reference voltage of the set of reference voltages, a set of sensing measurements, the set of sensing measurements for each reference voltage of the set of reference voltages comprising reading the non-volatile memory at multiple sense reference voltages that span a range of threshold voltage about each reference voltage; and set a first set of bits in an encoded output, the first set of bits comprising a logical state bit and one or more additional bits, the logical state bit to indicate a logical state of the memory cell and the one or more additional bits to indicate accuracy of the logical state bit based upon results of the read at the first set of sense conditions, the first set of sense conditions comprising a greater number than a number of the first set of bits.