1. A method for programming non-volatile storage, comprising: raising voltages for a set of word lines connected a group of connected non-volatile storage elements, the set of word lines include a selected word line, unselected word lines that are adjacent to the selected word line and other unselected word lines; after raising voltages for the set of word lines, further raising the selected word line to a program voltage; and after raising voltages for the set of word lines, further raising the unselected word lines that are adjacent to the selected word line to one or more voltage levels concurrently with the raising the selected word line to the program voltage, the program voltage causes at least one of the non-volatile storage elements to experience programming.