1. A method of forming a semiconductor device, comprising the steps of: providing a substrate comprising two electrodes wherein the two electrodes are connected to a power supply; providing a solvent comprising a plurality of semiconducting carbon nanotubes and a plurality of metallic carbon nanotubes; submersing the substrate in the solvent wherein the plurality of semiconducting carbon nanotubes and plurality of metallic carbon nanotubes form a carbon nanotube bundle disposed between the two electrodes; and ramping a bias voltage across the two electrodes wherein the ramping of the bias voltage removes the plurality of metallic carbon nanotubes in an amount sufficient to form the semiconducting device.