1. A method comprising: receiving a first amount of image data associated with images of a first plurality of sites on a surface of a semiconductor wafer with known values of at least one parameter of interest, wherein the first amount of image data is derived from measurements performed by at least one metrology technique; determining a feature extraction model based on at least a portion of each of the plurality of images of the first amount of image data, wherein the feature extraction model reduces a dimension of the first amount of image data to generate a reduced amount of image data; and training an image based measurement model based on the reduced amount of image data as input to the image based measurement model and the known values of the at least one parameter of interest as output training data.