1. A method of forming a flash memory device, the method comprising: (a) forming a silicon dioxide layer on a substrate; (b) forming a silicon nitride layer on the silicon dioxide layer; (c) exposing the silicon nitride layer to ultraviolet radiation having a wavelength of from about 150 nm to about 1200 nm; (d) depositing a dielectric material on the silicon nitride layer; and (e) depositing a conductive gate on the dielectric material.