1. A method of performing a read operation from a first magnetic random access memory (MRAM) cell in a memory cell string that includes the first MRAM cell coupled in series to a second MRAM cell, the method comprising: providing a voltage to a first end of the memory cell string that is closest to the first MRAM cell; providing a ground source to a second end of the first memory cell string that is opposite the first end; and determining whether a voltage change occurred at a node between the first and second MRAM cells in response to applying a write sense current across the first MRAM cell.