1. A resistive random access memory cell comprising: a first conductive layer operable as an electrode; a second conductive layer operable as an electrode; a resistive switching layer disposed between the first electrode and the second electrode; and a constant-resistance layer operable as an embedded resistor disposed between the resistive switching layer and the second electrode, wherein the embedded resistor comprises Ta X Si Y N such that both X>0 and Y>0; wherein an atomic ratio of X to Y is between 0.5:1 and 15:1.