1. A high speed carbon nanotube field effect transistor, comprising: a substrate; a source electrode; a drain electrode; a carbon nanotube, wherein the carbon nanotube forms a channel between the source electrode and the drain electrode; a gate dielectric; and a gate electrode, wherein the gate electrode is separated from the carbon nanotube by the gate dielectric, is positioned not to overlap the source or drain electrodes and comprises a top-gated geometry, and wherein an input radio frequency voltage is applied to the gate electrode.