1. A crossbar memory array, comprising: a first array of nanowires comprising a first material; a second array of nanowires comprising a second material oriented at an angle with respect to the first array of nanowires; a p-type silicon bearing material in direct contact with the first material; and a layer of non-crystalline silicon material disposed between the first material of a nanowire of the first array of nanowires and the second material of a nanowire of the second array of nanowires, and in direct contact with the p-type silicon bearing material, to form a resistive memory cell; wherein the non-crystalline silicon material comprises a plurality of defect sites, wherein at least some defect sites from the plurality of defect sites trap particles of the first material; wherein the particles of the first material form a filament within the layer of non-crystalline silicon material; and wherein the layer of non-crystalline silicon material and the p-type silicon bearing material provide a contact between the first material of the nanowire of the first array of nanowires and the second material of the nanowire of the second array of nanowires.