1. A method comprising: forming a resistive memory cell including: forming a first electrode; forming a dielectric structured as an operably variable resistance region on the first electrode; forming a plurality of structural pairs disposed on the dielectric, each structural pair having an oxide disposed on a metallic barrier such that the oxide and the metallic barrier are in direct contact with each other, each metallic barrier having metallic conductivity properties, the structural pairs stacked on each other on the dielectric, each metallic barrier formed with a structure and a material composition providing oxygen diffusivity above a first threshold of oxygen diffusivity during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold of oxygen diffusivity during a retention state of the resistive memory cell, the first threshold greater than the second threshold, the structure and material composition selected to maintain a metallic state or a semiconducting state during cell operation to provide oxygen movement to allow a low resistance to the resistive memory cell; and forming a second electrode such that the plurality of structural pairs is disposed between the dielectric and the second electrode.