1. A method of calibrating a self-reference read of a resistive memory array, comprising: setting a plurality of resistive memory units to a first resistive data state, the resistive memory units forming a memory array; reading a sensed resistive data state for each resistive memory unit by applying a first read current and a second read current through each resistive memory unit and then comparing voltages formed by the first read current and the second read current to determine the sensed resistive data state for each resistive memory unit; and adjusting the first read current or the second read current for each resistive memory unit where the sensed resistive data state was not the same as the first resistive data state until the sensed resistive data state is the same as the first resistive data state.