1. A method for manufacturing a memory device, the method comprising: forming a metal-oxide memory element; after said forming, applying an activating energy to the metal-oxide memory element and forming bias circuitry coupled to the metal-oxide memory element, the bias circuitry adapted to apply a plurality of bias arrangements across the metal-oxide memory element, the plurality of bias arrangements comprising: a first bias arrangement to change a resistance state of the metal-oxide memory element from a higher resistance state to a lower resistance state; and a second bias arrangement to change the resistance state of the metal-oxide memory element from the lower resistance state to the higher resistance state.