1. A method comprising: disposing a first photoresist on a substrate; forming a first portion of a two-dimensional target photoresist feature from the first photoresist by: exposing the first photoresist to electromagnetic radiation through a first reticle having a first mask pattern representing the first portion of the two-dimensional target photoresist feature, wherein the first mask pattern comprises only one or more unidirectional features, wherein each unidirectional feature of the first mask pattern is of a first single target width; and removing one or more exposed or non-exposed portions of the first photoresist; disposing a second photoresist on at least one of the substrate and the first portion of the two-dimensional target photoresist feature; forming a second portion of the two-dimensional target photoresist feature from the second photoresist by: exposing the second photoresist to electromagnetic radiation through a second reticle having a second mask pattern representing the second portion of the two-dimensional target photoresist feature, wherein the second mask pattern comprises only one or more unidirectional features, wherein each unidirectional feature of the second mask pattern is of a second single target width; and removing one or more exposed or non-exposed portions of the second photoresist; and etching the substrate having the first and second portions of the two-dimensional target photoresist feature thereon.