1. A method of operating a non-volatile logic circuit, comprising: a step (a) of preparing the non-volatile logic circuit, wherein: the non-volatile logic circuit comprises a control electrode, a ferroelectric layer, a semiconductor layer, and an electrode group, the control electrode, the ferroelectric layer, the semiconductor layer, and the electrode group are laminated in this order, the electrode group comprises a electric current source electrode, an output electrode, a first input electrode, and a second input electrode, when X direction, Y-direction, and Z-direction denote a longitudinal direction of the ferroelectric layer, a direction orthogonal to the longitudinal direction, and a lamination direction, respectively, the first input electrode is interposed between the electric current source electrode and the second input electrode along the X-direction, and the second input electrode is interposed between the first input electrode and the output electrode along the X-direction; a step (b) of writing one state selected from the group consisting of first, second, third, and fourth states into the non-volatile logic circuit, wherein: when V 1 , Va, and Vb are voltages applied to the control electrode, the first input electrode, and the second input electrode, respectively, when the first state is written, voltages, which satisfy V 1 >Va and V 1 >Vb, are applied, when the second state is written, voltages, which satisfy V 1 <Va and V 1 >Vb, are applied, when the third state is written, voltages, which satisfy V 1 >Va and V 1 <Vb, are applied, when the fourth state is written, voltages, which satisfy V 1 <Va and V 1 <Vb, are applied the first state is a low resistant states, and the second, third, and fourth states are high resistant states; and a step (c) of measuring current generated by applying an voltage between the electric current source electrode and the output electrode to determine on the basis of the current which the high or low resistant state the non-volatile logic circuit has.