1. A non-volatile phase change memory cell comprising an electrode layer for wiring; a phase change memory layer; and an electrode contact layer disposed between the electrode layer and the phase change memory layer, wherein, the electrode contact layer comprises indium zinc oxide (IZO) which has an electrical conductivity of 10 2 Ω −1 cm −1 or more and a thermal conductivity (K) of 0.2 W/cm·K or less; and wherein, coefficient of thermal conductivity (k) of the electrode contact layer is higher than the coefficient of thermal conductivity (k) of the phase change memory layer.