1. An integrated circuit (IC) switch configured to control signals transmitted along a signal path, the switch comprising: a plurality of Metal-Oxide-Silicon (MOS) transistors coupled in series in the signal path; and a plurality of switching elements connected in parallel and disposed in the signal path, wherein each said switching element comprises a Phase Change Material (PCM) structure, wherein said plurality of MOS transistors comprises a first MOS transistor fabricated on a first Silicon-On-Insulator (SOI) island and a second MOS transistor fabricated on a second Silicon-On-Insulator (SOI) island, said first and second SOI islands being separated by an intervening isolation region, and wherein the plurality of switching elements are fabricated on a dielectric layer portion disposed over the intervening isolation region and are connected in parallel between a drain terminal of the first MOS transistor and a source terminal of the second MOS transistor.