1. In an electronic circuit having a monolithic integrated circuit with at least one integrated resistor with a first temperature coefficient and having a resistor external to said integrated circuit with a second temperature coefficient different from said first temperature coefficient, the improvement comprising an integrated bias circuit for deriving a current from said external resistor which current is compensated for temperature-induced changes in the value of said integrated resistor, said bias circuit comprising means for passing a current which varies with said temperature-induced changes in the value of said integrated resistor through said integrated resistor to develop a voltage which is independent of said temperature induced changes in the value of said integrated resistor, means for sensing said voltage developed across said integrated resistor, and means for producing a voltage across said external resistor which is proportional to said voltage developed across said integrated resistor.