1. A method to program a multi-level cell (MLC) memory cell, the method comprising: generating a first binary value corresponding to a first sensed threshold voltage of the MLC memory cell corresponding to a first time at which a bias voltage is applied to a temporary bias cache capacitor of the MLC memory cell; generating a second binary value corresponding to a second sensed threshold voltage of the MLC memory cell corresponding to a second time at which the bias voltage is not applied to the temporary bias cache capacitor of the MLC memory cell; and based on the first and second binary values, selecting whether to program the MLC memory cell using a full program pulse or a partial program pulse.