1. A method for forming a multiple multilayer capacitor structure comprising at least three series connected capacitors on a semiconductor substrate, comprising the steps of: a) forming a first conductive well structure in the substrate; b) forming a first insulating layer over at least a portion of the conductive well structure; c) forming a first thin film conductive layer structure over the first insulating layer; d) forming a second insulating layer over at least a portion of the first thin film layer; e) forming a second thin film conductive layer structure over the second insulating layer; f) forming a third insulating layer over at least a portion of the second thin film layer; g) forming a third thin film conductive layer structure over the third insulating layer such that each of said adjacent conductive structures is separated by an insulating layer; and h) coupling the second thin film layer to a source of reference potential in the substrate.