1. A method of forming a non-volatile resistance variable device, comprising: forming a first conductive electrode material on a substrate; forming chalcogenide comprising material over the first conductive electrode material, the chalcogenide material comprising A x Se y, where “A” comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table; forming a silver comprising layer over the chalcogenide material; irradiating the silver effective to break a chalcogenide bond of the chalcogenide material at an interface of the silver comprising layer and chalcogenide material and diffuse at least some of the silver into the chalcogenide material, and forming an outer surface of the chalcogenide material; after the irradiating, exposing the chalcogenide material outer surface to an iodine comprising fluid effective to reduce roughness of the chalcogenide material outer surface from what it was prior to the exposing; and after the exposing, depositing a second conductive electrode material over the chalcogenide material, and which is continuous and completely covering at least over the chalcogenide material, and forming the second conductive electrode material into an electrode of the device.