1. In a controller of a non-volatile memory system that is coupled with a host device, a method comprising: acquiring a read level voltage of a first word line of a memory block of a non-volatile memory of the non-volatile memory system; accessing one or more lookup tables to determine an offset voltage for a second word line of the memory block based on a program/erase count and a read/disturb count associated with the memory block; applying the read level voltage and the offset voltage to the second word line to sample data stored at the memory block; and determining whether the data sampled from the memory block contains errors.