1. A non-volatile dynamic memory cell, comprising: a semiconductor substrate of a first conductivity type having a first surface portion which functions as a dynamic storage node for storing first and second logic states a first surface region of a second conductivity type, and a second surface portion disposed between said first surface portion and said first surface region; a transfer device for selectively coupling data signals between said first surface portion and said first surface region; a floating gate electrode disposed on and insulated from said second surface portion said substrate; first and second charge injection means disposed on said floating gate electrode for injecting charge into and removing charge from respectively, said floating gate electrode, each of said first and second charge injection means comprising a layer of silicon oxide having excess silicon crystals on its upper and lower surfaces; and first and second control electrodes disposed on said first and second charge injection means, respectively, said first and second control electrodes receiving first and second control signals, respectively, for initiating said charge transfer by said first and second charge injection means, respectively, such that said first charge injection means removes charge from said floating gate electrode when said first logic state is to be stored by said floating gate electrode and said second charge injection means injects charge into said floating gate electrode when said second logic state is to be stored by said floating gate electrode, as a function of the voltage on said first surface portion as well as the charge previously stored by said floating gate electrode, to overwrite said first and second logic states into said floating gate electrode.