1. A dual-gate device, comprising: a first insulating layer formed over a semiconductor substrate; a first gate electrode structure formed over the insulating layer; a first dielectric layer formed over the first gate structure; a semiconductor layer formed over the first dielectric layer, such that the gate electrode structure, the dielectric structure and a portion of the surface of the semiconductor layer form a first semiconductor device; a second dielectric layer formed over the semiconductor layer; and a second gate electrode structure formed over the second dielectric layer, such that the second gate electrode structure, the second dielectric layer and a portion of a surface of the semiconductor layer form a second semiconductor device, and such that the first and second semiconductor devices are sufficiently isolated from each other from electrostatically interacting.