1. A method of forming a non-volatile resistance variable device, comprising: forming a first conductive electrode material on a substrate; forming an amorphous chalcogenide comprising material to a first thickness over the first conductive electrode material, the chalcogenide material comprising A x B y, where “B” is selected from the group consisting of S, Se and Te and mixtures thereof, and where “A” comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table; forming a metal comprising layer to a second thickness over the chalcogenide material; the metal comprising layer defining some metal comprising layer transition thickness for the first thickness of the chalcogenide comprising material such that when said transition thickness is met or exceeded, said metal comprising layer when diffused within said chalcogenide comprising material transforms said chalcogenide comprising material from an amorphous state to a crystalline state; the second thickness being less than but not within 10% of said transition thickness; irradiating the metal effective to break a chalcogenide bond of the chalcogenide material at an interface of the metal and chalcogenide material and diffuse at least some of the metal into the chalcogenide material, and said chalcogenide comprising material remaining amorphous after the irradiating; and after the irradiating, depositing a second conductive electrode material over the chalcogenide material, and which is continuous and completely covering at least over the chalcogenide material, and forming the second conductive electrode material into an electrode of the device.