1. A method for reading data from a non-volatile storage system, comprising: determining whether a target memory cell is within a high boosting environment; determining whether the target memory cell is programmed into a highest programming state of a plurality of programming states; generating a high bit based on sensing the target memory cell between a first substate of the highest programming state and a second substate of the highest programming state; determining a stored data value based on the high bit in response to determining that the target memory cell is within the high boosting environment and that the target memory cell is programmed into the highest programming state; and outputting the stored data value.