1. A method for fabricating a two-terminal memory device, comprising: forming a conductive silicon bearing layer adjacent to and in physical contact with a first terminal of the two-terminal memory device, wherein the first terminal comprises a conductive metal layer; forming an interface layer with a thickness in a range of about 1 nanometer to about 8 nanometers adjacent to and in physical contact with the conductive silicon bearing layer, wherein the interface layer comprises a sub-oxide that is a mixture of silicon-based compounds with a chemical formula of SiO X , where 0<X<2; and depositing an active metal layer adjacent to and in contact with the interface layer as a second terminal of the two-terminal memory device.