1. A semiconductor structure with active zones in the form of a multi-wavelength diode that emits or absorbs a defined number of light wavelengths, such as a light-emitting diode or photodiode ( 10 , 16 , 24 , 26 , 36 , 46 , 54 , 68 , 74 , 80 ), comprising a substrate (SUB) with at least two active zones (AZ 1 -AZn), each of which emits or absorbs radiation of a different wavelength, a first (lower) active zone AZ 1 being grown on a surface of the substrate (SUB), at least one additional (upper) active zone (AZ 1 -AZn) being epitaxially grown, and the active zones (AZ 1 -AZn) being serially connected from the lower active zone (AZ 1 ) to the upper active zone (AZn) via at least one dividing layer (TD 1 -TDn) that serves as a low-impedance resistor, the dividing layer (TD 1 -TDn) being designed as a reciprocally polar np or pn junction in the form of an isolation diode or tunnel diode, between the lower active zone (AZ 1 ) and the upper active zone (AZn) one or more additional active zones (AZn) being epitaxially grown, the lowest active zone (AZ 1 ) having a low energetic band gap and each of the subsequent active zones (AZ 2 -AZn) having a higher energetic band gap than a previous active zone, and the semiconductor materials used for growing or epitaxing the isolation diodes or tunnel diodes (TD) either having an indirect band junction or an energetic band gap, which in each case is somewhat higher than the semiconductor materials that are used beneath it, characterized in that an absorption layer (AbsS) having the same material as the pn layer of the active zone (AZn) is grown on an active zone (AZn).