1. A memory unit comprising: a giant magnetoresistance cell electrically coupled between a write bit line and a write source line, a write current passing through the giant magnetoresistance cell switches the giant magnetoresistance cell between a high resistance state and a low resistance state; and a magnetic tunnel junction data cell electrically coupled between a read bit line and a read source line, the magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state, and be read by a read current passing though the magnetic tunnel junction data cell; a bridge of magnetic dots extend between the giant magnetoresistance cell and the magnetic tunnel junction data cell that provides magnetostatic coupling between the giant magnetoresistance cell and the magnetic tunnel junction data cell to switch the magnetic tunnel junction data cell between a high resistance state and a low resistance state.