1. A semiconductor memory device comprising: a variable resistance element configured to store a first data and a second data in accordance with a change in resistance value; a current generator configured to generate a reference current for determining data of the variable resistance element, and having a middle admittance between an admittance of the variable resistance element storing the first data and an admittance of the variable resistance element storing the second data; and a sense amplifier comprising a first input terminal connected to the variable resistance element and a second input terminal connected to the current generator, and configured to compare currents of the first input terminal and the second input terminal.