1. A non-volatile memory (NVM) write indirection device, comprising: a NVM storage array to store a plurality of storage elements; and a dual-scope directory structure having a background space and a foreground space, the structure to store a plurality of entries, each entry of the plurality of entries corresponding to a location in the NVM storage array storing one of the plurality of storage elements, wherein the background space includes entries for storage elements written into the array without any partial overwrites of a previously stored storage element in the background space and the foreground space includes entries for storage elements written into the array with at least one partial overwrite of one or more previously stored storage elements in the background space.