1. A method of erasing a page in a nonvolatile memory array having plural strings of memory cells on a substrate, wordlines across the strings to pages of memory cells and a pass transistor applying a voltage to each wordline, the method comprising: enabling each pass transistors of a selected block; at each of the plural selected wordlines of the selected block, applying a common select voltage to the pass transistor; at each of plural unselected wordlines of the selected block, applying a common unselect voltage to the pass transistor; and applying a substrate voltage to the substrate of the selected block, the voltage difference between the substrate voltage and a resulting voltage of each selected wordline causing the page of memory cells of the selected wordline to erase, and the voltage difference between the substrate voltage and a resulting voltage of each unselected wordline being less than that which erases the page of memory cells of the unselected wordline.