1. A memory device, comprising: one or more memory arrays; an error correction circuit configured to process data to be stored in the one or more memory arrays, the error correction circuit comprising: a first layer error correction circuit, wherein the first layer error correction circuit comprises a plurality of Hamming coders, wherein each Hamming coder of the plurality of Hamming coders is configured to: receive the data to be stored in the one or more memory arrays, process the data to generate a first Hamming code and a second Hamming code, and generate a Hamming correction bit vector based on the first Hamming code and the second Hamming code; and a second layer error correction circuit, wherein the second layer error correction circuit comprises a plurality of sets of Golay coders, wherein each set of the plurality of sets of Golay coders is configured to: receive the data to be stored in the one or more memory arrays, process the data to generate a first Golay code and a second Golay code, and generate a Golay correction bit vector based on the first Golay code and the second Golay code; wherein each of the Hamming correction bit vector and the Golay correction bit vector is a representation of one or more error(s) within the data, wherein one of the first layer error correction circuit or the second layer error correction circuit is configured to correct errors within the data missed by the other of the first layer error correction circuit or the second layer error correction circuit, and wherein the error correction circuit is configured to correct quad bit errors.