1. A non-volatile memory, comprising: a first word line comb structure, the first word line comb structure includes a first word line segment and a second word line segment connected to the first word line segment; a first adjustable resistance bit line structure, the first adjustable resistance bit line structure includes a first adjustable resistance local bit line and a first select gate, a first memory cell is arranged between the first adjustable resistance local bit line and the first word line segment, the first adjustable resistance local bit line is arranged between the first select gate and the first memory cell; and a second adjustable resistance bit line structure, the second adjustable resistance bit line structure includes a second adjustable resistance local bit line and a second select gate, a second memory cell is arranged between the second adjustable resistance local bit line and the second word line segment, the second adjustable resistance local bit line is arranged between the second select gate and the second memory cell, the first adjustable resistance local bit line is set into a conducting state during a memory operation, the second adjustable resistance local bit line is set into a non-conducting state during the memory operation.