1. A deep brain stimulating device, comprising: a semiconductor substrate; an array of electrodes coupled to the semiconductor substrate, wherein each electrode is operable to function as at least one of an anode, a cathode, a float, and a common independent of other electrodes in the array, wherein the common is a specified voltage between the anode and the cathode; and circuitry operable to control the array of electrodes, wherein the electrodes of the array are spatially arranged such that the circuitry is operable to selectively activate each electrode with a specified voltage to produce a unique electrical charge distribution across multiple electrodes that is steered to a targeted brain region, wherein the steered electrical charge distribution is voltage-based, the circuitry comprising a shift register associated with each electrode and operable to control each electrode, wherein an electric field is operable to be delivered in an asymmetrical pattern relative to a longitudinal axis or lateral axis of the deep brain stimulating device.