1. A method of processing a nonvolatile memory device, comprising: forming a first electrode; depositing a layer of the sol-gel solution on the first electrode; hydrolyzing the layer of sol-gel solution to form a gel layer of variable electric resistance material, including depositing the layer of the sol-gel solution and hydrolyzing the layer of the sol-gel solution at room temperature; and forming a second electrode on the gel layer of variable electric resistance material.