1. A method for memory block pool wear leveling in a nonvolatile memory system, the method comprising: identifying a plurality of memory block pools of the nonvolatile memory system, each of the memory block pools comprising a plurality of memory blocks and each of the plurality of memory blocks comprising a plurality of memory cells; identifying a relaxation time delay for each of the plurality of memory block pools, wherein the relaxation time delay for each of the plurality of memory block pools is identified as a duration of time between a completion of a programming cycle of the memory block pool and a point in time when BER (bit error rate) of the memory block pool is at a minimum; and executing a predetermined number of program/erase cycles for each of the plurality of memory block pools based upon the relaxation time delay of each of the plurality of memory block pools.