1. A resistive random access memory (RRAM) cell comprising: a first electrode having a lower portion, a continuous side portion and an upper portion, wherein the lower portion and the continuous side portion having an outer surface and an inner surface, and wherein the continuous side portion connects the lower portion and the upper portion; a resistive layer; and a second electrode; wherein the second electrode nests inside the resistive layer and the resistive layer nests inside the first electrode.