1. A method, comprising: forming a first inverter having a first p-channel FinFET and a first n-channel FinFET, the first p-channel FinFET and the first n-channel FinFET having a first shared contact forming a first cell node and a first common gate; and forming a second inverter cross-coupled to the first inverter and having a second p-channel FinFET and a second n-channel FinFET, the second p-channel FinFET and the second n-channel FinFET having a second shared contact forming a second cell node and a second common gate aligned with the first shared contact of the first inverter.