1. A method of storing and retrieving data for a resistive random access memory (RRAM) array of X memory cells comprising: forming individual memory bits, each of the individual memory bits having Y coupled memory cells, where Y is an integer greater than or equal to 2, such that the RRAM array has no more than X/Y of the individual memory bits; the Y coupled memory cells of each of the individual memory bits being arranged in parallel and being maintained in a common resistive state as one another during reading and writing operations; each of the individual memory bits having Y coupled memory cells providing enhanced reliability as compared to memory bits having only single memory cells; and wherein the array of X memory cells is sub-divided into a plurality of the individual memory bits each having an identical number Y of coupled memory cells, with each set of Y coupled memory cells comprised by one of the individual memory bit being configured to be separately programmed relative to other sets of Y coupled memory cells comprised by others of the individual memory bits, the programming of each individual memory bit including addressing the Y coupled memory cells of the individual memory bit by paired wordlines and a single bitline or by paired bitlines and a single wordline; and separately programming one or more of the individual memory bits relative to others of the individual memory bits.