1. A nonvolatile memory device, comprising: a first electrode including at least one element selected from the group consisting of Ag, Co, Ni, and Au; a second electrode; and a variable resistance layer provided between the first electrode and the second electrode, the variable resistance layer including a first region continuously provided between the first electrode and the second electrode, the first region comprising a first element and a second element, the first element including at least one of Si and Ge, and the second element including at least one selected from the group consisting of S, Se, Te, Cl, Br, and I, wherein the variable resistance layer further includes a second region, a second concentration of the second element included in the second region is less than a first concentration of the second element included in the first region, or the second region does not substantially contain the second element.