1. A method for programming a multi-level-cell in a multi-bit-cell of a charge trapping memory cell having a first side and a second side, the first side of the charge trapping memory cell storing a first bit and a third bit, the second side of the charge trapping memory cell storing a second bit and a fourth bit, the first bit associated with a first voltage level and the second bit associated with a second voltage level, comprising: performing a high level programming in the charge trapping memory cell; program verifying whether the charge trapping memory cell has been programmed to the high level passes a high threshold voltage level; and if the charge trapping memory cell passes the high threshold voltage level, performing a low programming level in the charge trapping memory cell.