1. A NAND-type resistive memory cell string, comprising: a bit line; a plurality of serially connected resistive memory cells connected to the bit line, wherein each of the plurality of resistive memory cells comprises: a first node, a second node, and a third node; a heater element connected between the first node and the second node; a variable resistor connected between the second node and the third node; and a switching device having a first terminal connected to the first node and a second terminal connected to the third node.