1. A nonvolatile memory device comprising a nonvolatile memory configured with memory cells, and the memory cell is comprised of: a plurality of first metal wirings extending along a first direction; a plurality of third metal wirings extending along a second direction orthogonal to the first direction; and memory elements and selection elements provided at intersection points of the first metal wirings with the third metal wirings, wherein the memory cell includes: a semiconductor substrate; the first metal wirings provided on the semiconductor substrate with being electrically connected to a peripheral circuit; the selection elements provided on the first metal wirings with being electrically connected to the first metal wirings; the memory elements provided on the selection elements with being electrically connected to the selection elements; second metal wirings provided on the memory elements with being electrically connected to the memory elements; the third metal wirings provided on the second metal wirings with being electrically connected to the second metal wirings and with being electrically connected to a peripheral circuit; and an interlayer film filled between the adjacent memory elements and between the adjacent selection elements with having voids between the adjacent memory elements.