1. A method of forming a non-volatile resistance variable device, comprising: providing conductive electrode material over chalcogenide material having metal ions diffused therein; forming an actinic energy blocking material layer on the conductive electrode material, the actinic energy blocking material layer being effective to shield actinic energy from reaching an interface of the conductive electrode material and the actinic energy blocking material to substantially preclude diffusion of the conductive electrode material into the chalcogenide material upon exposure to said actinic energy; forming a dielectric layer on the actinic energy blocking material layer; forming the conductive electrode material into a first electrode; and providing a second electrode proximate the chalcogenide material having the metal diffused therein.