1. A method, comprising: providing a layout of an interconnect pattern by using a computer; simulating a shape of the interconnect pattern, wherein the simulating provides a simulated interconnect pattern and takes into account a fabrication process effect and a lithography effect; dissecting the simulated interconnect pattern into a plurality of segments, wherein the dissecting includes using optical proximity correction (OPC) rules to determine a point of dissection; determining a segment RC parameter associated with each of the plurality of segments wherein the determining the segment RC parameter includes using a chemical mechanical process (CMP) model; determining an RC parameter associated with the interconnect pattern using the segment RC parameters; and storing the interconnect pattern and the determined RC parameter.