1. A method of sensing data stored in a content-addressable memory (CAM) memory cell including a switching transistor coupled with a multilayer magnetic tunnel junction formed from an insulating layer being disposed between first and second magnetic layers, said first magnetic layer being in communication with a first line and having a magnetization with a first magnetization direction, said second magnetic layer being in communication with a second line and having a magnetization with a second magnetization direction, said method comprising: during a write operation, providing write data to said first magnetic layer via the first line; heating said magnetic tunnel junction by applying at least a portion of current in the first line to said magnetic tunnel junction via said switching transistor; and adjusting said first magnetization direction of said first magnetic layer in accordance with the write data; and during a sense operation, providing input data to said second magnetic layer via the second line; and adjusting said second magnetization direction of said second magnetic layer in accordance with the input data; and comparing the input data with the write data by measuring a resistance value of said magnetic tunnel junction.