1. A method of forming a flash memory device, the method comprising: (a) forming a silicon dioxide layer on a substrate; (b) forming a silicon nitride layer on the silicon dioxide layer, the silicon nitride layer having a charge trap depth; (c) exposing the silicon nitride layer to ultraviolet radiation for an exposure time of 5 to 10 minutes and at a sufficient intensity to increase the charge trap depth of the silicon nitride layer by at least 5%; (d) after (c), depositing a dielectric material directly on the silicon nitride layer; and (e) depositing a conductive gate on the dielectric material.