1. A method for forming a three dimensional interconnected structure comprising the steps of: forming sets of devices on receiver and donor substrates of semiconductor material; implanting a donor substrate of semiconductor material with two or more exfoliating implants; bonding the substrates together to form a bonded structure; and heating the bonded structure until a portion of the donor substrate exfoliates from the bonded structure and leaves a residual portion of the donor substrate bonded to the receiver substrate.