1. A nonvolatile semiconductor memory comprising: a device region and a device isolating region, which have a striped pattern that extends in a first direction, the device region and the device isolating region being alternately and sequentially disposed at a first pitch in a second direction that is perpendicular to the first direction; and a contact of a first conductive material, connected to the device region and disposed at the first pitch in the second direction, wherein, on a cross section along the second direction, a bottom width of the contact is longer than the top width of the contact, and the bottom width is longer than the width of the device region.