1. In an Static Random Access Memory (SRAM) configuration, a method comprising: initiating a Float Mode operation of the SRAM configuration; selecting, during a first cycle, a first cell from a first plurality of SRAM cells indexed via WL_TOP<0:N> or a second cell from a second plurality of SRAM cells indexed via WL_BOT<0:N>; in response to a selection of the first cell or the second cell, providing a corresponding PCHG_TOP and a corresponding PCHG_BOT with a high value; detecting a leakage defect as a result of a leakage path from a domino bitline to ground; and determining a value of the data stored in the selected cell.