1. A method of verifying whether an unprogrammed antifuse in a semiconductor memory has a resistive shorts, comprising: connecting a first terminal of said antifuse in series with a verification circuit at a node; connecting said verification circuit in series with a bottom terminal of an outside transistor; applying a programming voltage to a second terminal of said antifuse; enabling said outside transistor into a conduction state; providing current to said node, said current being sufficient to charge said node from a first voltage to a second voltage; detecting voltage at the node; and identifying said antifuse as having a resistive short if voltage at said node remains proximate said first voltage.