1. A gated microelectronic device comprising: an insulator substrate; a source supported on said insulator substrate, said source with a source ohmic contact; said source having a source dopant type and a source dopant concentration and defining a source linear extent and a source thickness; a drain supported on said insulator substrate, said drain with a drain ohmic contact; said drain having a drain dopant type and drain dopant concentration and defining a drain linear extent and a drain thickness; a channel portion intermediate between said source and said drain, said channel portion supported on said insulator substrate and having a channel portion dopant type and channel portion dopant concentration and defining a channel portion linear extent and a channel portion thickness, said channel portion being a thin film an insulative dielectric in contact with said channel portion; a gate in overlying contact with said insulative dielectric, said gate defining a gate-insulative dielectric interface; said channel portion having a dimension normal to the gate-insulative dielectric interface suitable to fully deplete in an off-state; a gate contact applying a gate voltage bias to control charge carrier accumulation and depletion in said channel portion; and the source dopant, the drain dopant, and the channel portion dopant being all of a same type and wherein the source dopant concentration the channel dopant concentration, and the drain concentration are equivalent; wherein the source dopant concentration is between 10 12 per cm 3 and 10 19 per cm 3 ; and wherein the source linear extent, the drain linear extent, and the positioning of the source ohmic contact and drain ohmic contact prevent ambipolar behavior in the device.