1. A memory system comprising: a non-volatile solid state memory comprising selected memory cells coupled to a selected word line, proxy memory cells coupled to a proxy word line, wherein the selected memory cells are non-adjacent to the proxy memory cells; and a memory controller configured to: apply a read proxy voltage to the proxy word line when data is read from the selected memory cells; and determine a read disturb based on a difference between a predetermined value stored in the proxy memory cells and a value read from the proxy memory cells.