1. A method of programming a dual memory cell comprising a first electrode, a second electrode and a central electrode, a first variable resistance material disposed between the first electrode and the central electrode forming a first memory element, and a second variable resistance material disposed between the second electrode and the central electrode forming a second memory element, the method comprising: coupling a source of ground potential to a conductive node; coupling a source of elevated potential to the central electrode; and selectively activating either a first switch coupled between the conductive node and the first electrode, or a second switch coupled between the conductive node and the second electrode, such that a physical property of either the first or second variable resistance material is detectably modified.