1. A resistance memory device with a metal/semiconductor/metal (MSM) current limiter, the device comprising: a memory resistor bottom electrode; a memory resistor material overlying the memory resistor bottom electrode; a memory resistor top electrode overlying the memory resistor material; an MSM bottom electrode overlying the memory resistor top electrode; a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and, an MSM top electrode overlying the ZnOx semiconductor layer.