1. A method, comprising: identifying a pattern for an overall target cut mask to be used in patterning a plurality of line-type features to be formed above a semiconductor substrate, wherein said overall target cut mask comprises a target non-rectangular opening feature having an inner, concave corner; decomposing said overall target cut mask pattern into a first sub-target pattern and a second sub-target pattern, wherein said first sub-target pattern comprises a first rectangular-shaped opening feature corresponding to a first portion, but not all, of said target non-rectangular opening feature and said second sub-target pattern comprises a second rectangular-shaped opening feature corresponding to a second portion, but not all, of said target non-rectangular opening feature, said first and second openings having an area of overlap at a location corresponding to a location of said inner, concave corner in said overall target cut mask; identifying a line-type feature that is to be cut by making cuts corresponding to said first and second openings, wherein, when cut, said cut line-type feature will have a cut end; identifying a contact that is to be formed so as to conductively contact said cut line-type feature at a location adjacent said cut end of said cut line-type feature; identifying a contact-to-end-of-cut-line spacing rule for said contact based upon a spacing between one of said first and second rectangular-shaped openings and a nearest edge of said contact at the intended location where said contact is to engage said cut line-type feature; generating a first set of mask data corresponding to said first sub-target pattern; and generating a second set of mask data corresponding to said second sub-target pattern, wherein at least one of said first and second sets of mask data is generated based upon the identified contact-to-end-of-cut-line spacing rule.