1. A method for operating a non-volatile storage system, comprising: during a first time period: (a) applying a source voltage to a source of each of a plurality of NAND strings, each of the plurality of NAND strings is associated with a respective bit line, (b) preventing coupling of each respective bit line to a respective sense component, and (c) coupling each bit line to a respective discharge path; and during a second time period which follows the first time period, continuing to apply the source voltage to the source of each of the plurality of NAND strings, and allowing coupling of each respective bit line to the respective sense component.