1. A method to program an electronic memory, the method comprising: receiving a program request to program a page of memory comprising a multi-level cell (MLC), receiving a first page of data and a second page of data associated with the program request; and programming the page of memory to store the second page of data, without reading the MLC between the receipt of the program request and programming the MLC; wherein a voltage threshold of the MLC after the programming is based, at least in part, on the first page of data.