1. A method of forming Field Effect Transistors (FETs), said method comprising: defining FET locations on a layered semiconductor wafer semiconductor gates being formed in all FET locations; identifying polysilicon gate locations, at least one FET location being identified as a polysilicon gate location, remaining FET locations being metal gate locations; replacing semiconductor gates with metal in said metal gate locations; and connecting FETs together, metal gate FETs being connected to semiconductor gate FETs.