1. A method of forming a non-volatile memory device, comprising: providing a substrate having a surface region; depositing a first dielectric material overlying the surface region of the substrate; forming a first wiring structure overlying the first dielectric material; depositing a silicon material overlying the first wiring structure, the silicon layer being characterized by a thickness of no greater than about 100 Angstroms; depositing a silicon germanium material at a depositing temperature raging from about 400 Degree Celsius to about 490 Degree Celsius overlying the first wiring structure using the silicon material as a seed layer, the silicon germanium material being substantially free of voids and having a polycrystalline characteristic; depositing a resistive switching material comprising an amorphous silicon material overlying the silicon germanium material; depositing a conductive material overlying the resistive material; and forming a second wiring structure overlying the conductive material.