1. A method for manufacturing an electrolyte material layer with a chalcogenide material incorporated or deposited therein for use in semiconductor memory devices, the method comprising: producing a semiconductor substrate; depositing a binary chalcogenide layer onto the semiconductor substrate; depositing a sulfur-containing layer onto the binary chalogenide layer; and creating a ternary chalcogenide layer comprising two different chalcogenide compounds wherein a component of the chalcogenide compounds comprises materials of one of the IV elements main group a transition metal, and a combination thereof.