1. A magnetic memory comprising: a plurality of memory array tiles (MATs), each of the plurality of MATs including a plurality of magnetic storage cells, a plurality of bit lines, and a plurality of word lines, each of the plurality of magnetic storage cells including at least one magnetic element and at least one selection device, the at least one magnetic element being programmable using at least one write current driven through the at least one magnetic element, the plurality of bit lines and the plurality of word lines corresponding to the plurality of magnetic storage cells; intermediate circuitry for controlling read operations and write operations within the plurality of MATs; a plurality of global bit lines, each of the global bit lines corresponding to a first portion of the plurality of MATs; a plurality of global word lines, each of the global word lines corresponding to a second portion of the plurality of MATs; and global circuitry for selecting and driving a portion of the plurality of global bit lines and a portion of the plurality of global word lines for the read operations and the write operations.