1. A method for reading cells of a flash memory, said method comprising: comparing a charge level of a first individual cell to a first plurality of charge level boundary points, thereby to determine a first program level of said first individual cell, and subsequently comparing a second charge level of a second individual cell to a second plurality of charge level boundary points, wherein said first plurality of boundary points depends on at least one charge level of at least one neighbor of said first cell and said second plurality of boundary points depends on at least one charge level of at least one neighbor of said second cell such that said first and second pluralities of boundary points differ.