1. A method of forming a non-volatile memory device, comprising: providing a substrate having a surface region; forming a first dielectric material overlying the surface region of the substrate; forming a first wiring structure overlying the first dielectric material; forming a structure comprising a first conductive material in electric contact with the first wiring structure; wherein forming the structure comprises: forming a second dielectric material overlying the first wiring structure; forming a via within the second dielectric material exposing a portion of the first wiring structure; and forming the first conductive material within the via; forming a junction material comprising a polycrystalline silicon germanium material having a p+ impurity characteristic overlying the first conductive material, the junction material being deposited at a first deposition temperature ranging from about 350 Degrees Celsius to about 500 Degrees Celsius; forming a resistive switching material comprising a polycrystalline silicon epitaxially over the junction material using the junction material as a template material at a second deposition temperature ranging from about 350 Degrees Celsius to about 500 Degrees Celsius, the polycrystalline silicon material having an intrinsic semiconductor characteristic, wherein the polycrystalline silicon is epitaxially formed without an anneal process; forming a second conductive material overlying the resistive switching material, the second conductive material being in physical contact and electric contact with the resistive switching material; and forming a second wiring structure overlying the second conductive material.