1. A method for forming a non-volatile memory device, comprising: depositing a first dielectric layer overlying a surface region of a substrate; forming a first wiring structure overlying the first dielectric material; forming a junction layer overlying the first wiring structure; forming a resistive switching layer overlying the junction layer; subjecting a stack layer comprising at least the junction layer, the resistive switching layer to a first patterning and etching process to form a first structure comprising at least the junction layer and the resistive switching layer, the first structure comprising a surface region comprising a surface region of the resistive switching layer; forming a second dielectric layer overlying the first structure, wherein the second dielectric layer comprises a controlled thickness above the surface region; forming an opening structure in portions of the second dielectric layer to expose a portion of the surface region of the resistive switching layer; forming a first metal layer comprising first metal material overlying at least the portion of the surface region of the resistive switching layer within a portion of the opening structure; forming a silver layer overlying at least the portion of the surface region of the resistive switching layer in the opening structure, wherein the silver layer is derived from a solution comprising at least a silver species in a reaction bath, wherein the solution comprises an alkaline pH to cause silver species of the solution to be reduced by the first metal material, and wherein the first metal layer is solubilized while forming the silver material, wherein the solution comprising the silver species comprises a silver oxide material, potassium hydroxide and water; and forming a second wiring structure overlying the silver layer and an exposed surface of the second dielectric layer.