1. A method for storing data in an electronic memory device, the method comprising: receiving a write command to write data to an electronic memory device having multi-level cell (MLC) memory elements, wherein each MLC memory element is programmable to designated programming states, wherein each designated programming state is representative of at least two bits of data; and programming at least one of the MLC memory elements to one of a plurality of restricted programming states in a single-level cell (SLC) mode, wherein the restricted programming states exclude at least one of the designated programming states, and the restricted programming states comprise: a first state which is an erase state; and a second state, other than the erase state, which is closest to a natural threshold voltage of the MLC memory elements.