1. A method of forming a dual gate oxide, comprising: forming a first gate oxide layer over first and second areas of a semiconductor substrate; nitridizing said first gate oxide layer to form an oxynitride layer over said first gate oxide layer; removing said oxynitride layer and said first gate oxide layer in an area overlying said second area of said semiconductor substrate, wherein said step of removing is performed to expose said second area of said semiconductor substrate; and growing a second gate oxide layer over said second area of said semiconductor substrate while simultaneously reoxidizing said first gate oxide layer such that said reoxidized first gate oxide layer is thinner than said second gate oxide layer.