1. A method of programming a resistive random access memory (RRAM) array for an analog computation, the method comprising: programming a selected RRAM cell of the RRAM array with a selected target conductance; determining a programmed conductance error of the selected RRAM cell; and programming a neighboring RRAM cell with an error corrected target conductance, wherein the neighboring RRAM cell is in a same row as the selected RRAM cell or a same column as the selected RRAM cell, wherein the error corrected target conductance is a function of a neighboring target conductance and the programmed conductance error of the selected RRAM cell; and wherein the selected RRAM cell and the neighboring RRAM cell are programmed such that the RRAM array is programmed for the analog computation.