1. An integrated circuit memory device, comprising: a plurality of memory cells including a memory cell selected for programming; a plurality of word lines coupled to the memory cells, the plurality of word lines including a first word line and a second word line; and a circuit coupled to the word lines, the circuit adapted to program the memory cell selected for programming, by performing: during a first programming period, provide a first voltage to the first word line and a second voltage to the second word line, and during a second programming period, provide a third voltage to the first word line and a fourth voltage to the second word line, wherein an absolute value of the third voltage is larger than an absolute value of the first voltage, and an absolute value of the fourth voltage is larger than an absolute value of the second voltage.