1. A method of operating a multi state memory device, comprising: determining whether a majority of memory cells of a page of memory cells are to be programmed to threshold voltages above an intermediate point of all threshold voltages used to represent possible data states of the memory device; and if a majority of the memory cells of the page of memory cells are to be programmed to threshold voltages occurring above the intermediate point, programming the majority of the memory cells of the page of memory cells to threshold voltages below the intermediate point and setting a flag associated with the page of memory cells indicating an inversion operation has occurred on the page of memory cells.