1. A method comprising: receiving a first address indicative of a first memory location of a programmable memory, the first memory location comprising a plurality of memory cells; in response to determining the first address is associated with a one-time programmable (OTP) memory location, applying a first read voltage to a first memory cell of the plurality of memory cells to determine a first state of the first memory cell; and in response to determining the first address is not associated with the OTP memory location, applying a second read voltage to the first memory cell to determine the first state of the first memory cell, the second read voltage different from the first read voltage.