1. A method for overwriting data in a memory device comprising a first and second set of memory cells, the method comprising: (a) storing data in a first set of memory cells in a memory device; (b) storing an error code in a second set of memory cells in the memory device, the error code representing the data stored in the first set of memory cells; (c) writing a destructive pattern into at least some of the first set of memory cells, wherein the error code no longer represents the data stored in the first set of memory cells after the destructive pattern is written; and (d) disregarding the error code.