1. A memory device, comprising: a first memory member and a second memory member arranged in electrical series; a first logic state corresponding to a first resistance state of the first memory member and a first resistance state of the second memory member; a second logic state corresponding to the first resistance state of the first memory member and a second resistance state of the second memory member; and a third logic state corresponding to a second resistance state of the first memory member and the first resistance state of the second memory member.