1. A method for forming a multi-level memory device, comprising: using a single mask to pattern a first Magnetic Tunnel Junction (MTJ) element and a second MTJ element, wherein the first MTJ element is patterned between a first metal layer and a second metal layer and the second MTJ element is patterned between the second metal layer and a third metal layer, providing a conductive layer to flow current through the first MTJ element and the second MTJ element; and fabricating the first MTJ element and the second MTJ element such that a first barrier layer of the first MTJ element and a second barrier layer of the second MTJ element have different thicknesses.