1. A method for reading out a resistive memory cell comprising two electrodes that are spaced from each other by an ion-conducting resistive material, the memory cells being transferrable from a stable state HRS having a higher resistance value into a stable state LRS having a lower resistance value when a write voltage is applied, in that the write voltage drives migration of ions through the ion-conducting resistive material, and an electrically conducting path through the ion-conducting resistive material is formed along the path of this migration, a read voltage having the same polarity as the write voltage being applied applied for read-out, and the current flowing through the memory cell being evaluated, wherein the read voltage is applied as a read pulse, wherein the number of ions driven driven through the ion-conducting resistive material during the pulse is set by way of of the level and duration of the pulse in such a way that, proceeding from the HRS state, they suffice for foaming an electrically conducting path through the ion-conducting resistive material, at least until the onset of a flow of current through through this path, and thus for the transition into a metastable VRS state having a reduced resistance value and a predefined relaxation time for return into the HRS state, but not for transition into the LRS state, and further wherein a relaxation time of 10 s or less is selected.