1. A nonvolatile semiconductor memory device comprising: a nonvolatile storage element to which data is inhibited from being rewritten; a read operation control circuit which captures a read operation instruction signal in synchronization with an external input clock, the read operation instruction signal giving an instruction to start a read operation to read data out of the nonvolatile storage element; a write operation control circuit to which a write operation instruction signal is input asynchronously with the external input clock, the write operation instruction signal giving an instruction to start a write operation to write data to the nonvolatile storage element; and a reset circuit which resets an operation of the read operation control circuit upon receiving the write operation instruction signal.