1. A resistance change memory device comprising memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R 0 , R 1 and R 2 (R 0 <R 1 <R 2 ) are selectively set, wherein resistance gaps ΔR 1 (=R 1 −R 0 ) and ΔR 2 (=R 2 −R 1 ) are set to satisfy the relationship of ΔR 1 >ΔR 2 .