1. A semiconductor device, comprising; a first conduction type semiconductor substrate; a first conduction type semiconductor deposition layer being formed on the substrate and having a dopant concentration lower than the dopant concentration of the substrate; a trench formed substantially perpendicularly to the semiconductor deposition layer so that the semiconductor deposition layer exposes to a bottom of the trench; second conduction type wells formed in the semiconductor deposition layer so that each of the wells surrounds the trench except for a portion of the semiconductor deposition layer, the portion being in contact with the bottom; a JFET region separating the wells from each other and being included in the semiconductor deposition layer; a first conduction type first source region being formed in each of the wells and being in contact with sides of the trench; a second conduction type second source region being formed in the first source region, being in contact with the sides; a trench-type source electrode being formed inside the trench, being in contact with the first source region, the second source region, and the semiconductor deposition layer to configure a Schottky junction; a gate insulator film formed over the first source region, the second source region, and the J FET region; a gate electrode formed on the gate insulator film; and a drain electrode formed on a back surface of the substrate.