1. A two-terminal memory cell, comprising: a first terminal; a second terminal; a two-terminal memory element; and a non-ohmic device (NOD) including a layer of metal in contact with a single layer of doped polycrystalline silicon, the contact operative to form a single Schottky diode, the Schottky diode and the two-terminal memory element are electrically in series with each other and with the first and second terminals.