1. A multi-wavelength light-emitting diode, comprising a substrate (SUB) with a plurality of active zones (AZ 1 -AZ n ), each of said active zones emitting light of a different wavelength, a first and lower active zone (AZ 1 ) of said active zones (AZ 1 -AZ n ) being grown on a surface of the substrate (SUB), at least one upper active zone (AZ n ), and at least one further active zone (AZ 2 -AZ n-1 ) epitaxially grown between the lower active zone (AZ 1 ) and the upper active zone (AZ n ), the lower active zone (AZ 1 ) having a low energetic band gap and each subsequent active zones (AZ 2 -AZ n ) having a higher energetic band gap than a previous active zone, the active zones being serially connected from the lower active zone (AZ 1 ) to the upper active zone (AZ n ) via at least one dividing layer (TD 1 -TD n ) that serves as a low impedance resistor and as a substrate for growing a further or upper active zone, the at least one dividing layer being designed as a reciprocally polar np or pn junction in the form of an isolation diode or tunnel diode, and semiconductor materials used for growing or epitaxing the isolation diodes or tunnel diodes (TD) having either an indirect band junction or an energetic band gap, which in each case is higher than semiconductor materials that are used beneath it, wherein an absorption layer (Abs s ) is grown directly on an upper surface of at least one active zone (AZ 1 -AZ n ), the absorption layer being formed of a material which is the same as a pn layer of the active zone on which the absorption layer is grown, and which adjusts intensity of light emitted by the at least one active zone on which the absorption layer is grown to generate multiple photon-emission peaks of differing wavelengths with substantially equalized intensities within the multi-wavelength diode.