1. An apparatus, comprising: a block comprising memory cells, the memory cells are arranged in strings and connected to a set of word lines, and the memory cells are programmed to different programmed data states including a lowest programmed data state and a highest programmed data state; and a control circuit, the control circuit is configured to perform a countermeasure for a first read situation in the block, wherein the countermeasure is a function of a temperature and to perform the countermeasure, the control circuit is configured to set a read voltage of the lowest programmed data state according to a positive temperature coefficient, and to set a read voltage of the highest programmed data state according to a negative temperature coefficient.