1. A semiconductor device comprising: a semiconductor substrate; and a memory in which a first capacitor, including a first upper electrode, a first dielectric layer and a first lower electrode and formed over the semiconductor substrate, and a second capacitor, including a second upper electrode, a second dielectric layer and a second lower electrode and formed over the semiconductor substrate, are disposed, wherein the semiconductor device can store information with three or more levels, and wherein the first and second dielectric layers have hysteresis characteristics exhibiting mutually differing coercive voltages.