1. A method for adapting sensitivity of a memory device to single event upsets (SEUs) due to ionizing particles, said method comprising: providing a first memory device adapted for receiving single event upsets due to ionizing particles; generating fail rate data at said first memory device; providing a control device for receiving said fail rate data input from the first memory device; determining a predetermined SEU fail rate for said second memory device; dynamically applying voltage biases to a second memory device, said voltage biases optimally mapped according to said predetermined SEU fail rate, wherein an operating point for said second memory device is dynamically achieved that balances SEU immunity and memory device performance.