1. A method for sensing a resistance variable memory cell, comprising: applying a programming ramp signal to the memory cell, wherein the programming signal is a signal that is used to program the memory cell to a particular resistance state and is of a sufficient magnitude to program the memory cell to the particular resistance state, sensing a signal associated with the memory cell while the programming signal is being applied to the memory during a first time period; sensing a signal associated with the memory cell while the programming signal is being applied to the memory during a second time period; and determining a resistance state of the memory cell based on the signals sensed during the first time period and during the second time period by comparing the signals sensed during the first time period and during the second time period.