1. A method of changing the resistance of a variable resistance memory cell which includes at least a variable resistance memory element formed over a doped semiconductor of a first conductivity type, the doped semiconductor containing a well of a second conductivity type, the method comprising: when an access device coupled to the memory element is not active, applying a voltage differential across the variable resistance memory element to thereby induce a current capable of changing the resistance of the memory element to flow through the semiconductor of a first conductivity type and contained well and through the variable resistance memory element.