1. In a storage subsystem comprising a non-volatile memory array that uses programmable voltage reference values to determine states of memory cells, a method for selecting voltage reference values for performing memory read operations, the method comprising: in response to an error in a first read operation on a first storage element in the non-volatile memory array, the error preventing data from being retrieved from the first storage element: determining a set of one or more reference voltage values for reading data from the first storage element based on one or more reference voltage values of at least one storage element that is related to the first storage element in the non-volatile memory array; and performing a second read operation on the first storage element using the determined set of one or more reference voltage values in an attempt to retrieve the data stored on the first storage element.