1. A method for writing and reading operating parameters for an integrated semiconductor memory device, the method comprising: providing an integrated semiconductor memory device including a data connection to write and read data, a control connection to apply control signals for controlling read and write accesses to the integrated semiconductor memory device, an address connection to apply an address, a plurality of registers to store operating parameters, and a plurality of memory cells to store data, wherein the integrated semiconductor memory device is switchable from a first operating mode to a second operating mode by being driven with a configuration signal; in the first operating mode, performing a write and read access to one of the memory cells by application of a set of control signals to the control connection, wherein a data item is written to and read from the one of the memory cells via the data connection; in a second operating mode, performing a read and write access to one of the registers so as to store one of the operating parameters by applying the set of control signals to the control connection, wherein one of the operating parameters is written to and read from the one of the registers via the data connection; driving the integrated semiconductor memory device with the configuration signal in order to operate the integrated semiconductor memory device in the second operating mode; selectively performing one of initializing the integrated semiconductor memory device to write one of the operating parameters to one of the registers and initializing the integrated semiconductor memory device to read one of the operating parameters from one of the registers; applying an address to the address connection of the integrated semiconductor memory device for selecting one of the operating parameters and for selecting one of the registers for storage of the selected one of the operating parameters; applying a first one of the set of control signals that is used in the first operating mode for access to memory cells along a word line to the control connection of the integrated semiconductor memory device to write and evaluate the applied address; and selectively performing one of: applying a second one of the control signals that is used in the first operating mode for write access to a memory cell along the word line to the control connection of the integrated semiconductor memory device and applying data to the data connection of the integrated semiconductor memory device for writing the selected one of the operating parameters to the selected one of the registers that stores the selected one of the operating parameters; and applying of a third one of the control signals that is used in the first operating mode for a read access to a memory cell along the word line to the control connection of the integrated semiconductor memory device and to produce a data record at the data connection for reading the selected one of the operating parameters from the selected one of the registers that stores the selected one of the operating parameters.