1. A programming device for applying one or more programming pulses according to a predefined programming scheme to one or more Phase Change Memory (PCM) cells to achieve a target resistance level of the PCM cells, the programming device comprising: a pulse generator; and a control circuit for controlling the pulse generator according to the predefined programming scheme, wherein the programming scheme is operable to perform in a first mode one or more annealing steps to approach the target resistance level, wherein the programming scheme is operable to perform in a second mode one or more melting steps, and wherein the programming scheme is operable to start in the first mode and to switch to the second mode if the target resistance level of the PCM cell has been undershot in the first programming mode.