1. A magnetoresistive random access memory (MRAM) comprising: a pinned magnetic layer; a barrier layer adjacent the pinned magnetic layer; and a giant magnetoresistance (GMR) structure adjacent the barrier layer, the GMR structure comprising a first magnetic layer, a second magnetic layer, and a conductive layer interposed between the first magnetic layer and the second magnetic layer, wherein the pinned magnetic layer, the barrier layer, and the GMR structure are laterally over a dielectric layer, wherein the MRAM is capable of reading a resistance state between the second magnetic layer and the pinned layer.