1. A memory cell comprising: a first single electrode; first and second portions of resistance variable material in contact with the first single electrode, wherein the first and second portions of resistance variable material are on at least a portion of a sidewall of a mesa of dielectric material, and wherein the mesa of dielectric material is in contact with at least a portion of the first single electrode; a first, second electrode in electrical communication with the first portion of the resistance variable material; and a second, second electrode in electrical communication with the second portion of the resistance variable material.