1. A microelectronic structure comprising: at least one layer of high dielectric constant material; at least one conductive barrier layer in contact with the layer of high dielectric constant material, wherein such conductive barrier layer comprises at least one material selected from the group consisting of Pt, Ir, IrO 2, Ir 2 O 3, Ru, RuO 2, binary metal nitrides, ternary metal nitrides, and compatible combinations, mixtures and alloys thereof; at least one metal layer in contact with the conductive barrier layer, wherein said metal layer comprises metal or metal alloy including a material selected from the group consisting of Cu and Al.