1. A resistive switching device for a non-volatile memory device, comprising: a first electrode; a resistive switching material configured in an opening region in a dielectric material overlying the first electrode, the resistive switching material being characterized by a surface region having a planar region and an indent structure, wherein at least a portion of the planar region being configured overlying the first electrode and having a distance between the planar region and a top surface of the first electrode, and the indent structure being configured overlying the first electrode and having a thickness of resistive switching material relative to the first electrode that is less than the distance; and a second electrode overlying the resistive switching material including the indent structure; and wherein in response to an electrical stimulus applied to the non-volatile memory device, the indent structure causes a path for a filament structure derived from the second electrode to preferentially form within the resistive switching material at a region of the indent structure.