1. A nonvolatile semiconductor memory device, comprising a memory cell array in which a plurality of memory cell layers having a plurality of first and second wires which cross each other and a memory cell provided at each intersection of these first and second wires are laminated on top of each other, the memory cells having a variable resistance element and a non-ohmic element laminated in a direction in which the memory cell layers are laminated, the variable resistance element and the non-ohmic element of the memory cells being laminated in the same order between a certain memory cell layer and another memory cell layer , the first or second wires being shared by a first memory cell layer and a second memory cell layer of the plurality of memory cell layers, the first and second memory cell layers being adjacent in the direction in which the memory cell layers are laminated, and the memory cells being tapered in such a manner that an area in a cross section gradually becomes smaller from a bottom of the first memory cell layer towards the top of the second memory cell layer.