1. A memristive device comprising: a first electrode; a second electrode; and a junction, said junction being interposed between said first electrode and said second electrode, said junction comprising: a semiconductor matrix; and particles embedded in said semiconductor matrix, said particles each comprising a potential well configured to hold a selectable level of electrical charge, wherein a quantity of said particles in said semiconductor matrix is sufficient that said electrical charge held in said particles governs and promotes a uniform electrical resistance of a path between said first and second electrodes through said semiconductor matrix, and an amount of current flowing through said junction for a given reading voltage, wherein said quantity of particles is configured such that a programming voltage applied will set the electrical resistance of said path, which resistance will remain unchanged in response to the reading voltage less than the programming voltage and will remain unchanged until said electrical charge is discharged or a second, greater programming voltage is applied.