1. A method of measuring the temperature parameters of an ISFET that uses hydrogenated amorphous silicon as a sensing film, comprising: (a1) making the sensing film contact a buffer solution; (a2) changing the pH value of the buffer solution at a predetermined temperature and using a current/voltage measuring device to measure and record the source/drain current and the gate voltage of the ISFET so as to obtain a curve; (a3) selecting a fixed current from the curve to obtain the temperature parameter at the predetermined temperature; and (a4) changing the temperature of the buffer solution to repeat the steps a1 to a3 so as to obtain the temperature parameters at different temperatures.