1. A content-addressable memory (CAM) cell comprising: a first phase change material device (PCMD); a first access transistor coupled in series with said first PCMD having a control terminal coupled to a bitline; a matchline coupled to said series-connected first PCMD and first access transistor, said matchline configured to discharge or not discharge, depending on whether a logic value of a comparand and a programming state of said first PCMD satisfy a predetermined criterion; a second PCMD; and a second access transistor coupled in series with said second PCMD, wherein said series-connected second PCMD and second access transistor is coupled between a wordline and said matchline.