1. A method for using a memory array, the method comprising: (a) providing a memory array comprising a plurality of memory cells, each memory cell comprising a memory element comprising a semiconductor material configurable to one of at least three resistivity states, wherein a first resistivity state is used to represent a data state of the memory cell when the memory cell operates as a one-time programmable memory cell but not when the memory cell operates as a rewritable memory cell; and (b) performing at least one of the following: (b1) using at least some of the memory cells as one-time programmable memory cells, wherein a one-time programmable memory cell uses the first resistivity state to represent a data state of the memory cell; or (b2) using at least some of the memory cells as rewritable memory cells, wherein a rewritable memory cell does not use the first resistivity state to represent a data state of the memory cell.