1. A method for operating a multi-level resistive random access memory (RRAM) cell having a current-controlling device and a RRAM device connected together, the method being free of a “forming” step and comprising setting the RRAM device to one of resistance levels by controlling the current-controlling device to one of current levels, wherein the setting the RRAM device includes applying a first voltage to a top electrode of the RRAM device and applying a second voltage to a bottom electrode of the RRAM device, the second voltage being higher than the first voltage, wherein setting the RRAM device occurs without the RRAM device having previously undergone the “forming” step, wherein the “forming” step generates a conductive path in a resistive material layer of the RRAM device.