1. A method for simulating an integrated circuit (IC) design in a circuit design simulator, the method comprising: receiving data representing a circuit design, said data configured for input to and processing by said circuit design simulator; when simulating said circuit design, accessing an IDDQ prediction macro to establish a leakage current prediction for said circuit design, said leakage current prediction determinable at a single device, cell, circuit, or IC chip level of said design, said IDDQ prediction macro modeling statistical information to calculate one or more uplift factors used in said leakage current prediction at said single device, cell, circuit, or IC chip level of design, wherein a processor device performs at least one of said receiving, accessing, modeling and uplift factor calculating.