1. A non-volatile memory system comprising: at least one non-volatile memory device, wherein the at least one non-volatile memory device contains a memory array with a plurality of physical row pages arranged in a plurality of erase blocks, wherein each physical row page containing one or more user data sectors and one or more overhead data areas; and wherein a non-split data move control circuit is adapted to move one or more selected user data sectors and associated overhead data areas stored in one or more physical row pages of a selected source erase block to a target erase block in a modified copy-back move operation such that selected user data sectors and the associated overhead data areas stored in a source physical row page of the source erase block are moved to a target physical row page of the target erase block by reading the selected user data sectors and the associated overhead data areas into an internal latch of the at least one non-volatile memory device, transferring one or more latched user data sectors and associated overhead data areas from the at least one non-volatile memory device, masking the selected user data sectors and the associated overhead data areas, and writing the selected user data sectors and the associated overhead data areas to the target physical row page.