1. A method for programming in a memory device, comprising: performing rough programming of a set of memory cells to threshold voltages comprising threshold voltages which are below final verify voltages of different target data states, the memory cells are connected to a word line, the set of memory cells comprises memory cells of one target data state of the different target data states and memory cells of another target data state of the different target data states, the final verify voltages of the different target data states comprise one final verify voltage of the one target data state and another final verify voltage of the another target data state, and the another final verify voltage is greater than the one final verify voltage; after the rough programming, applying at least one negative voltage to the word line; and after the applying the at least one negative voltage to the word line, performing additional programming of the set of memory cells to threshold voltages which are above the final verify voltages of the different target data states.