1. A crosspoint array comprising: a plurality of bitlines and wordlines; and a plurality of crossbar elements, each crossbar element disposed between a bitline and a wordline and each crossbar element comprising at least a solid electrolyte material used as a rectifier in series with a symmetric or substantially symmetric resistive memory node, where one or more of said crossbar elements are responsive to the following voltages: a first set of voltages to transition said solid electrolyte in said crossbar elements from an OFF state to an ON state; a second set of voltages to read or program said symmetric resistive memory, and a third set of voltages to transition solid electrolyte from an ON state to a OFF state.