1. A method of programming an electrically programmable memory, comprising: applying at least one first programming pulse to a group of memory cells of an electrically programmable memory; accessing the memory cells of the group to ascertain a programming state thereof; and applying at least one second programming pulse to those memory cells in the group whose programming state is not ascertained to correspond to a desired programming state, varying a voltage applied to a control electrode of the memory cells between the at least one first programming pulse and the at least one second programming pulse, wherein the varying the control electrode voltage comprises: forecasting a change in biasing conditions of the memory cells in the group between the at least one first and at least one second programming pulses; and varying the control electrode voltage according to the forecasted change in biasing conditions.