1. A method, comprising: receiving an instruction related to selection of a two-terminal memory cell of a memory device for a read operation; selecting a wordline of the memory device that is associated with the selected two-terminal memory cell; applying a read signal to a bitline of the memory device, wherein the bitline is connected to a first terminal of the two-terminal memory cell; and determining a state of a sensing circuit in response to applying the read signal and in response to selecting the worldline, wherein the sensing circuit comprises a read transistor having a gate selectively connected to a second terminal of the two-terminal memory cell in response to the selecting the worldline, and further wherein the state of the sensing circuit is determinative of a program or erase state of the two-terminal memory cell.