1. A method of forming a memory cell comprising a chalcogenide glass with the formula A x B 100−x , the method comprising: providing component A to be either Sn or Sb; providing component B to be a material from Group 16 of the periodic table; providing a metal-chalcogenide material M y B 100−y proximate the chalcogenide glass; and applying a conditioning voltage that at least partially replaces homopolar bonds of A-A in the chalcogenide glass with A-B bonds to form a conducting channel.