1. A method for sensing a resistive memory cell, comprising: performing a sensing operation on a memory cell to determine a first current associated with the memory cell; applying a programming signal to the memory cell to produce a second current associated with the memory cell, wherein the programming signal is a signal applied to program the memory cell to a particular data state and the memory cell is programmed to the particular data state; outputting an output signal that corresponds to a difference between the first current and the second current associated with the memory cell; and determining a data state of the memory cell based on the output signal.