1. A method for analyzing a defect of a photolithographic mask for an extreme ultraviolet (EUV) wavelength range (EUV mask), the method comprising: a. generating at least one focus stack relating to the defect using an EUV mask inspection tool, wherein the at least one focus stack comprises an image recorded in a focus plane, at least one image recorded above the focal plane, and at least one image recorded below the focal plane; b. determining a surface configuration of the EUV mask at a position of the defect; c. providing model structures having the determined surface configuration which have different phase errors and generating the respective focus stacks; and d. determining a three dimensional error structure of the EUV mask defect by comparing the at least one generated focus stack of the defect and the generated focus stacks of the model structures.