1. A method of operating a two terminal nanotube memory cell comprising: applying a first electrical stimulus between a first terminal and a second terminal, so as to change the resistance of a nanotube article between the first terminal and the second terminal to a relatively high resistance; and applying a second electrical stimulus between the first terminal and the second terminal, so as to change the resistance of the nanotube article between the first and second terminals to a relatively low resistance, wherein a relatively high resistance of the nanotube article corresponds to a first informational state of the memory cell, and wherein a relatively low resistance of the nanotube article corresponds to a second informational state of the memory cell; and wherein the nanotube article is in permanent electrical communication with the first terminal and the second terminal.