1. A programmable element comprising: a diode formed in a first portion of a polysilicon layer, the polysilicon layer being formed on the top surface of a dielectric layer, the dielectric layer being formed on the top surface of a semiconductor substrate and electrically isolating the polysilicon layer from the underlying semiconductor substrate, the diode including a first region of a first conductivity type and a second region of a second conductivity type; and a programmable structure formed in a second portion of the polysilicon layer, the programmable structure including a third region of the first conductivity type and a fourth region of the second conductivity type, the first region of the diode and the third region of the programmable structure being electrically connected, wherein the programmable structure of the programmable element is programmed to a low impedance state when a voltage exceeding a first breakdown voltage of the programmable structure is applied to the programmable element to reverse bias the programmable structure.