1. A method of reading the informational state of a resistive change element, said method comprising: providing a resistive change element, wherein said resistive change element is capable of being switched between at least two non-volatile resistance values with a first resistance value corresponding to a first informational state and a second resistance value corresponding to a second informational state; providing a resistive reference element, wherein said resistive reference element has an electrical resistance selected to fall between said first resistance value and said second resistance value; discharging a voltage through both said resistive change element and said resistive reference element; and comparing the rate of discharge through said resistive change element to the rate of discharge through said resistive reference element; wherein a greater rate of discharge through said resistive change element corresponds to a first informational state being stored within said resistive change element and a greater rate of discharge through said resistive reference element corresponds to a second informational state being stored within said resistive change element.