1. A method for operating a memory device comprising a first memory member and a second memory member arranged in electrical series, the first and second memory members each programmable to a plurality of resistance states, the method comprising: applying a first voltage scheme across the series arrangement of the first and second memory members to change the memory device from a first logic state to a second logic state, the first and second logic states corresponding to the same resistance state of the first memory member and corresponding to different resistance states of the second memory member; and applying a second voltage scheme across the series arrangement of the first and second memory members to change the memory device from the first logic state to a third logic state, the first and third logic states corresponding to different resistance states of the first memory member and corresponding to the same resistance states of the second memory member.