1. A magnetic random access memory comprising: a plurality of word lines; a plurality of sense lines; a matrix array of memory cells, each memory cell being located on an intersection of a corresponding one of said word lines and a corresponding one of said sense lines, each memory cell including a magnetoresistance element and a switching element which establishes a resistive connection between the corresponding sense line and the magnetoresistance element when the corresponding word line is addressed; and a plurality of sense circuits respectively corresponding to said sense lines, each sense circuit including a capacitive element connected to the corresponding sense line and a switching element for applying a voltage to the capacitive element and removing the voltage when the corresponding sense line is addressed, thereby discharging energy from said capacitive element through said resistive connection to said magnetoresistance element.