1. In a MTJ MRAM cell, the improvement comprising n &plus; -p silicon films on a metal layer formed by: depositing a film of amorphous silicon on the metal layer, doping the amorphous silicon film with a p-type dopant, transforming the amorphous silicon into polysilicon, and forming a n&plus; silicon film on a portion of the polysilicon film, thereby forming n &plus; -p silicon films on the metal layer.