1. A method of sequentially accessing memory cells in a nonvolatile memory device having a plurality of strings and a common signal line coupled to the plurality of strings, each string including a plurality of memory cells and a selection transistor coupled between the plurality of memory cells and the common signal line, the method comprising: receiving a command to access multiple memory cells in the nonvolatile memory device; applying a voltage to a first selection transistor of a first string in the plurality of strings to electrically connect the common signal line to the first string; applying a pulse for a predetermined time period to a second selection transistor of a second string and to a third selection transistor of a third string in the plurality of strings; and sequentially accessing first and second memory cells of the first string.