1. A method for programming a memory cell connected to a selected word line in a memory device, the method comprising: performing one programming pass of a multi-pass programming operation for the memory cell, wherein a first set of program pulses is applied to the selected word line during the one programming pass; determining a number of the program pulses applied to the selected word line during the one programming pass; determining a difference between the determined number of program pulses applied to the selected word line during the one programming pass and a predetermined number of program pulses; adjusting a parameter of a second set of program pulses for the another programming pass based on the determined difference; and performing the another programming pass for the set of memory cells, wherein the second set of program pulses is applied to the selected word line during the another programming pass.