1. A memory device, comprising: a first magnetic material to attract a movable structure when a first voltage is applied between the first magnetic material and the movable structure; wherein when the first voltage is applied between the movable arm and the first magnetic layer, the movable arm moves upward toward the first magnetic layer and attaches to the dielectric layer because of electrostatic force, remains attached even after the removal of the voltage due to magnetic force; and a second magnetic material to release the movable structure when a second voltage is applied between the second magnetic material and the movable structure; wherein the second voltage may create a force stronger than the magnetic force holding the movable arm to the first dielectric layer, and thereby cause the movable arm to detach from the first dielectric layer and to attach to the metal layer, wherein the first magnetic material and the second magnetic material are between approximately 50 to 100 Å (Angstroms) in thickness, and wherein the memory device is faster than 5 nanoseconds in speed.