1. A system, comprising: a memory that stores computer executable components; and a processor that executes the following computer executable components stored in the memory: a memory fabrication component that facilitates fabrication of a two-terminal memory cell with an active region comprising a silicon bearing layer, an interface layer situated atop the silicon bearing layer, and an active metal layer situated atop the interface layer, the memory fabrication component comprising: a formation component that: determines a defined characteristic associated with an oxidation period characterized by growth of a controlled oxide comprising the interface layer; and facilitates introduction of an N 2 O plasma concentration according to a determined proportion that satisfies the defined characteristic of the oxidation period.