1. A magnetic random access memory (MRAM), comprising: a plurality of magnetic memory cells; a plurality of local word lines, each of the local word lines being operatively coupled to at least one memory cell for assisting in writing a logical state of the at least one memory cell corresponding thereto; a plurality of global word lines, each of the plurality of global word lines being connected to at least one of the plurality of local word lines, the global word lines being substantially isolated from the memory cells; a plurality of write circuits operatively coupled to the global word lines, each of the write circuits being configurable as at least one of a current source and a current sink for supplying and returning, respectively, at least a portion of a write current for assisting in writing a logical state of one or more selected memory cells, the write circuit being configured to selectively distribute the write current across a plurality of the global word lines so that stray magnetic field interaction between selected memory cells and at least one of half-selected memory cells and unselected memory cells is reduced; and a plurality of bit lines operatively coupled to the memory cells for selectively writing the logical state of one or more of the memory cells.