1. An integrated circuit processor having embedded spin transfer torque memory, comprising: a processing unit comprising a logical circuit having a plurality of transistors, the logical circuit having a top metal landing pad; an dielectric layer formed on the top metal landing pad of the logical circuit; an adhesion and topography planarization (ATP) layer disposed on the dielectric layer, the ATP layer comprising a plurality of ATP pads each having a size, wherein: the plurality of ATP pads are in electrical contact with the top metal landing pad and also have a first dielectric material filled inbetween, and the ATP layer comprises: a top layer comprising Ta, Nb, Ti, Zr, Hf, Mg, Cr, Zn, Al, TaN, W, or TiN, and a bottom layer comprising WN, CrN, TiN, TaN, or NiCrN; a MTJ film layer disposed on the ATP layer, the MTJ film layer comprising a plurality of MTJ elements each having a size, wherein the plurality of MTJ elements have a second dielectric material filled inbetween; at least one bit line formed on the MTJ film layer; and a passivation layer disposed on the bit line with the MTJ film layer.