1. A method for making a photovoltaic device, the method comprising: forming a memory cell including: providing a silicon substrate comprising a complementary metal-oxide semiconductor (“CMOS”); and bonding a first layer of silicon oxide to a second layer of silicon oxide wherein the bonded layers are deposited on the silicon substrate; forming a III-V photovoltaic cell on a side of the bonded silicon oxide layers opposite the silicon substrate; and forming a memory erasure device connected to the III-V photovoltaic cell, the III-V photovoltaic cell to generate a current when the III-V photovoltaic cell is exposed to radiation, the current to power the memory erasure device to cause an alteration of a memory state of the memory cell.