1. A ferroelectric or electret memory circuit (C), particularly a ferroelectric or electret memory circuit with improved fatigue resistance, comprising a ferroelectric or electret memory cell with a memory material ( 2 ) exhibiting hysteresis and capable of being polarized to a positive or negative polarization state with a given polarization value, and first and second electrodes ( 1 a, 1 b ) provided directly or indirectly contacting the memory material in an arrangement such that by applying appropriate voltages to the electrodes, a potential difference can be generated over the memory material ( 2 ) for polarizing an unpolarized memory cell, or inducing a switching between a polarization states of the memory cell and the opposite polarization state, or inducing a temporary change in the polarization state or value thereof in the memory cell, 1 a; 1 b ) comprises at least one functional material ( 3 ) being capable of physical and/or chemical bulk incorporation of atomic or molecular species contained in either the electrode material or the memory material ( 2 ) of the memory cell and displaying a propensity for migrating in the form of mobile charged and/or neutral particles from all electrode material into the memory material ( 2 ) or from the latter into the former, whereby an adverse effect on the functional properties of either the electrode material or the memory material ( 2 ) of the memory cell can be offset.