1. A method comprising: activating at least one of a plurality of control switches, wherein each of the control switches is coupled in parallel with a respective one of a plurality of variable-resistance material memory (VRMM) cells, each VRMM cell coupled to two electrodes through spacer electrodes with the spacer electrodes separated by and coupled to variable-resistance material of the respective VRMM cell such that each spacer electrode contacts a lower film and an upper film with the variable-resistance material of the respective VRMM cell between the lower film and the upper film; and activating a select switch to write to or read from those of the plurality of VRMM cells that are coupled in parallel to those of the control switches that were not activated such that current flows through the spacer electrodes of those of the plurality of VRMM cells that were not activated.