1. A method of sensing a stored value of a programmable conductor random access memory element, the method comprising: setting a row line and a column line associated with said memory element to respective voltage levels such that no current flows through said memory element; changing the voltage at one of said row line and said column line to a level sufficient to initiate current flow through said memory element; and comparing the voltage on the one of said row line and said column line that is being discharged with a reference voltage to determine a logical state of said memory element.