1. A method of operating an electrically programmable, phase-change memory element, said memory element having at least a low resistance state and a high resistance state, said method comprising: providing said memory element; and applying a plurality of first-type pulses of energy to said memory element, each of said first-type pulses being sufficient to program said memory element from said low resistance state to said high resistance state, each of said first-type pulses having an energy which is greater than the minimum energy needed to program said memory element from said low resistance state to said high resistance state.