1. A method for forming a resistive switching device for a non-volatile memory device, comprising: providing a substrate having a surface region; forming a first dielectric material overlying the surface region of the substrate; forming a first wiring structure overlying the first dielectric material; forming a first electrode material comprising a silicon bearing material having a p+ impurity characteristic overlying the first wiring structure; forming a resistive switching material comprising an amorphous silicon material overlying the first electrode material; forming an active metal material overlying the resistive switching material, the active metal material forming an active metal region derived from the active metal material in a portion of the resistive switching material upon application of a thermal energy characterized by a temperature no less than about 100 Degree Celsius; forming a second wiring structure overlying the active metal material; and forming a blocking structure interposing and contacting the active metal material and the resistive switching material to inhibit formation of the active metal region in the portion of the resistive switching material during the forming of the active metal material and during forming of the second wiring structure.