1. A memory device comprising: input/output (I/O) circuitry to receive signals; a plurality of memory banks; detector logic comprising circuitry configured to detect for a signal, the signal to specify that received commands include successive write commands each to access a same memory bank of the plurality of memory banks; a buffer, wherein, if the detector logic detects the signal, the detector logic to signal the buffer to store first write data of the successive write commands until a receipt of second write data of the successive write commands; prefetch logic configured to perform a prefetch of bits from one or more memory banks of the plurality of memory banks, wherein a total number of the bits of the prefetch is greater than a total number of bits of the first write data or a total number of bits of the second write data; and error correction logic configured to calculate error check information based on the first write data and the second write data.