1. A semiconductor storage device comprising: a first block including first and second memory strings electrically connected to a common bit line, the first memory string including first and second memory cells and the second memory string including third and fourth memory cells; a first word line electrically connected to gates of the first and third memory cells; and a second word line electrically connected to gates of the second and fourth memory cells, wherein: when data are written in the first block, the data are sequentially written in the first, third, second, and fourth memory cells in order.