1. A method of forming a semiconductor structure comprising: forming at least a first semiconductor material portion and a second semiconductor material portion on a substrate; forming a first dielectric material stack over said first semiconductor material portion and a second dielectric material stack over said second semiconductor material portion, said first dielectric material stack comprising an adjustment oxide layer including a silicate of a metal selected from alkaline earth metals, Group IIIB elements, and rare earth metals and a first portion of a contiguous high dielectric constant (high-k) dielectric layer, and said second dielectric material stack comprising a semiconductor oxide layer and a second portion of said contiguous high-k dielectric layer; forming a first metallic material layer and a sacrificial capping layer on said high-k dielectric layer over said first and second dielectric material stacks; inducing oxygen deficiency in said contiguous high-k dielectric layer employing an anneal in which oxygen supply into said contiguous high-k dielectric layer is blocked by said sacrificial capping layer; physically exposing a top surface of said second portion of said contiguous high-k dielectric layer by removing a portion of said first metallic material layer, while a remaining portion of said first metallic material layer is present over said first semiconductor material portion; and forming a second metallic material layer directly on said top surface of said second portion of said contiguous high-k dielectric layer and a top surface of said first metallic material layer.