1. A method for employing patterning process statistics for ground rules waivers and optimization, comprising: applying Optical Proximity Correction (OPC) to alter a ground rules layout using plan of record process methods to improve mask pattern images; simulating images produced by a mask; mapping patterning process variation distributions into a distribution for an intersect area by creating a histogram based upon a plurality of processes for the intersect area; and analyzing the intersect area with a processor using the histogram to provide ground rule waivers and optimization.