1. A non-volatile memory, comprising: a first word line comb structure, the first word line comb structure includes a first word line segment and a second word line segment connected to the first word line segment; a first adjustable resistance bit line structure, the first adjustable resistance bit line structure includes a first adjustable resistance local bit line and a first select gate, a first memory cell is arranged between the first adjustable resistance local bit line and the first word line segment; and a second adjustable resistance bit line structure, the second adjustable resistance bit line structure includes a second adjustable resistance local bit line and a second select gate, a second memory cell is arranged between the second adjustable resistance local bit line and the second word line segment, the first adjustable resistance local bit line is set into a conducting state during a memory operation, the second adjustable resistance local bit line is set into a non-conducting state during the memory operation.