1. A system for detecting the state of a memory element within a crossbar array, the system comprising a sense circuit, said sense circuit comprising: a sense element for sensing electric current flowing from a column line connected to a target memory element; a storage element for storing a first electric current value flowing from said column line when said target memory element is half-selected; and a summing node for combining said stored first electric current value with a second electric current value flowing from said column line when said target memory element is fully selected.