1. A non-volatile memory device comprising: a first electrode; a second electrode comprising a metal material; a resistive switching material comprising an amorphous silicon material overlying the first electrode; and a thickness of dielectric material disposed between the second electrode and the resistive switching layer, the thickness of dielectric material being configured to electrically breakdown in a region when a first voltage is applied to the second electrode and cause formation of an open region in a portion of the thickness of dielectric material, the open region having a first dimension to allow a first metal region to form within the portion of the thickness of dielectric material and extending in a portion of the resistive switching material from the metal material. wherein the metal material is selected from silver, platinum, palladium or nickel, or a combination; and wherein the metal material has a first thickness less than a second thickness, the second thickness being used by a memory device absent of the thickness of dielectric material.