1. A vertical access transistor comprising: a substrate, a first conductive line over and completely isolated from the substrate by a first dielectric region; a second dielectric region over the first conductive line; a second conductive line over the first dielectric region; a via formed through the second dielectric region and the second conductive line and being at least partially directly over the first conductive line, the via having a sidewall lined with an insulating material, the via being filled with at least one semi-conductive material, the semi-conductive material comprising a channel in direct contact with at least one of a top surface of the first conductive line and a conductive material over the via.