1. A method of forming an integrated circuit with nonvolatile memory cells, comprising: forming circuitry accessing particular nonvolatile memory cells, including: forming conductive rows accessing the nonvolatile memory cells by row; and forming conductive columns accessing the nonvolatile memory cells by column; and then forming programmable resistive elements of the nonvolatile memory cells to conductively connect each of the programmable resistive elements with the conductive rows and the conductive columns.