1. A method of programming a memory, comprising: selecting a logic state for programming a first bitcell of the memory; programming a first one-time-programmable (OTP) element of the first bitcell using a first set of conditions intended to achieve a first target resistance in accordance with the selected logic state which results in a first degree of programming of the first OTP element; and programming a second OTP element of the first bitcell using a second set of conditions different from the first set of conditions intended to achieve a second target resistance in accordance with the selected logic state which results in a second degree of programming of the second OTP element, wherein the first and second degrees of programming are visually indistinguishable.