1. A non-volatile memory device; comprising: a resistive switching device comprising a first electrode, a second electrode, and a resistive switching element, wherein the resistive switching element comprises a silicon material disposed in an overlapping region between the first electrode and the second electrode, wherein the second electrode comprises at least a metal material physically and electrically in contact with the resistive switching material, wherein the resistive switching element is characterized by a resistance depending on an electric field in the resistive switching element; and a non-linear device coupled between the first electrode and the resistive switching element, wherein the non-linear device is configured to conduct electric current when a voltage greater than a first voltage is applied to the second electrode; wherein the resistive switching device is configured to change from a first state to a second state in response to the first voltage.