1. A method of sensing a programmed state of a non-volatile memory cell, the method comprising: precharging an input node of a single-ended sensing device to a precharge potential while the input node is coupled to a source/drain region of the non-volatile memory cell; applying a reference current to the input node; driving a control gate of the non-volatile memory cell; isolating the input node from the precharge potential; and sensing a potential level at the input node while applying the reference current, wherein the potential level at the input node is indicative of the programmed state of the non-volatile memory cell.