1. A memory system comprising: a three-dimensional nonvolatile memory array device having: a plurality of memory elements having a stack of a plurality of bits, each of the plurality of bits includes: a magnetic free layer configured to alternate a magnetization orientation based on a radio frequency current at a resonant frequency of the magnetization excitations of the magnetic free layer reducing a first threshold magnetic field level to induce a bit reversal in the magnetic free layer, and on a magnetic field being applied to the magnetic free layer; a magnetic pinned layer having a specific magnetization orientation; and a non-magnetic layer located in between the magnetic free layer and the magnetic pinned layer to decouple the magnetization of the magnetic pinned layer from the magnetization of the free layer; and a memory controller in communication with each of the plurality of memory elements, the memory controller configured to write data to and read data from the plurality of bits in the memory elements.