1. A method of operating non-volatile storage that includes a plurality of bit lines and a plurality of word lines, the method comprising: a) charging unselected bit lines of the plurality of bit lines to an inhibit voltage at a first rate; b) applying a program voltage to a selected word line of the plurality of word lines after the unselected bit lines have been charged to the inhibit voltage at the first rate; c) repeating said a) and said b) until a program condition that indicates how far programming has progressed is reached; d) charging unselected bit lines of the plurality of bit lines to the inhibit voltage at a second rate that is different from the first rate after the program condition has been reached; and e) applying a program voltage to the selected word line after the unselected bit lines have been charged to the inhibit voltage at the second rate.