1. A method of managing a flash memory array comprising: at a first time, mapping a plurality of memory states of a memory cell to a first threshold window, where individual ones of the plurality of memory states are mapped to sub-ranges of the first threshold window; and at a second time, mapping the plurality of memory states of the memory cell to a second threshold window, where individual ones of the plurality of memory states are mapped to sub-ranges of the second threshold window, the second threshold window being wider than the first threshold window.