1. A method of programming a target memory cell of a memory device, comprising: applying a first voltage, at a first time, to a word line that includes the target memory cell; applying a second voltage, at the first time, to word lines that do not include the target memory cell; applying a third voltage, at the first time, to a bit line selectively coupled to a string of memory cells that includes the target memory cell; increasing the first and second voltages at substantially the same rate, starting at a second time after the first time, until the first and second voltages reach a pass voltage level at a third time after the second time; increasing the first voltage from the pass voltage, starting at the third time, to an initial programming voltage level at a fourth time after the third time; maintaining the first voltage at the initial programming voltage level until a fifth time after the fourth time; and determining whether the target memory cell is programmed after the fifth time; and increasing the initial programming voltage level by a step voltage if it is determined that the target memory cell is not programmed; wherein the initial programming voltage, the step voltage, the pass voltage, a length of time between the second and third times, and a length of time between the third and fifth times are each selectable after fabrication of the memory device.