1. A memory device, comprising at least one spintronic element adapted for representing a state from among at least n states associated with the spintronic element, n >1, each of the n states being associated with at least one characteristic of a set of magnetic skyrmions in the spintronic element, and said characteristic associated with a state n o i being distinct from said characteristic associated with a state n o j when the states n o i and j are two distinct states from among the n states, and wherein said at least one characteristic represents a number of magnetic skyrmion(s) present in the spintronic element and/or an electric resistance level of the set of the magnetic skyrmion(s).