1. A semiconductor device including a nonvolatile memory, comprising: a first conductivity type semiconductor region; a pair of second conductivity type diffusion regions formed within said first conductivity type semiconductor region; an insulating layer formed on said first conductivity type semiconductor region; a charge trapping layer comprising a plurality of silicon nitride regions formed within a silicon dioxide layer, said charge trapping layer formed on said insulating layer, and a control electrode formed on said charge trapping layer.