1. A method comprising: forming a resistive memory cell including: forming a first electrode; forming a dielectric structured as an operably variable resistance region on the first electrode: forming a metallic barrier in a region between the dielectric and a second electrode, the metallic barrier formed with a structure and a material composition providing oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell, the first threshold greater than the second threshold, the structure and material composition selected to maintain a metallic state or a semiconducting state during cell operation to provide oxygen movement to allow a low resistance to the resistive memory cell; and forming the second electrode.