1. A method of reading non-volatile memory, comprising: reading a first set of one or more non-volatile storage elements, said reading said first set includes applying one or more first read values to determine if said one or more storage elements of said first set are programmed to a first physical state; and reading a second set of one or more non-volatile storage elements, said reading said second set includes applying one or more second read values to determine if said one or more storage elements of said second set are programmed to said first physical state, said first physical state includes a lower minimum voltage for said second set of one or more non-volatile storage elements than for said first set of one or more non-volatile storage elements; wherein said one or more second read values are less than said one or more first read values.