1. An adaptive method for reading a resistive memory, comprising: applying a first sample pulse of voltage to a terminal of a resistive memory cell; measuring a first resistance of the resistive memory cell, where the measuring takes place in response to the first sample pulse; applying a second sample pulse of voltage to the terminal of the resistive memory cell; measuring a second resistance of the resistive memory cell, where the measuring takes place in response to the second sample pulse; determining a difference between the first resistance and the second resistance; and determining a logic state of the resistive memory cell from the difference.