1. An apparatus comprising: a memory cell electrically coupled to a first line and to a second line; and a driver circuit electrically coupled to the first line and to the second line, the driver circuit configured to: provide both a selection mode of operation and a de-selection mode of operation for the memory cell; receive at least a first voltage reference, a second voltage reference, and a third voltage reference, wherein each of the first voltage reference, the second voltage reference, and the third voltage reference is different from one another, wherein the first voltage reference is higher in voltage than the second voltage reference, wherein the second voltage reference is higher in voltage than the third voltage reference; when in the selection mode of operation, bias the memory cell based on the first voltage reference and the third voltage reference such that the driver circuit is configured to: provide the first reference voltage to the first line, provide the third reference voltage to the second line, and after a snapback event, provide the second voltage reference to the first line; and when in the de-selection mode of operation, bias the memory cell based on at least the second voltage reference such that the driver circuit is configured to provide the second voltage reference to each of the first line and the second line.