1. A method for programming a solid state memory device having an array of memory cells that are each programmable from an erased state to a target programmed state of a plurality of programmable states, the method comprising: preprogramming a target memory cell from the erased state to a preprogrammed threshold voltage that is less than a lowest threshold voltage of all of the plurality of programmable states; and programming the target memory cell from the preprogrammed threshold voltage to the programmed state.