1. A method of forming a field effect transistor comprising: forming a masking layer over a semiconductive substrate; forming an opening through the masking layer and defining a substrate area over which a field effect transistor gate is to be formed; providing a dopant of a first conductivity type through the opening and into the substrate; after providing the dopant through the opening, forming sidewall spacers over respective sidewalls of the opening; providing an enhancement dopant of a second conductivity type which is different from the first conductivity type through the opening and into the substrate; and forming a transistor gate within the opening proximate the sidewall spacers, and providing source/drain regions of the second conductivity type into the substrate and operably proximate the transistor gate, the providing of the dopant of the first conductivity type forming a halo region proximate the source/drain regions.