1. A non-volatile resistance random access storage circuit comprising a plurality of memory units, wherein each of the memory units comprises: a field effect transistor comprising a gate electrode, a source electrode, a drain electrode, and a channel between the gate electrode, the source electrode, and the drain electrode; a resistance changeable component comprising: a first terminal electrically connected to the gate electrode; and a second terminal electrically connected to a conducting electrode; wherein the resistance changeable component is formed by laminating at least one oxide layer onto at least one first metal layer, and then laminating at least one second metal layer onto the oxide layer, wherein the resistance, conductivity or conducting current of the resistance changeable component has equivalent to or more than two stable states by voltage or current sources applied between the first terminal and the second terminal of the resistance changeable component.