1. An integrated circuit device, comprising: a semiconductor substrate having a surface region; a gate dielectric layer overlying the surface region of the substrate; a MOS device formed on the semiconductor substrate, the MOS device comprising a gate structure overlying the gate dielectric layer, a first active region, and a second active region, wherein the first active region forms a first electrode of a resistive switching device; a dielectric layer formed on the MOS device, wherein the dielectric layer comprises a via exposing at least a portion of the first active region; a resistive switching material formed within the via of the dielectric layer, the resistive switching material overlying and touching at least a portion of the first active region of the MOS device, wherein the resistive switching material formed within the via forms a switching media of the resistive switching device; and a second electrode material formed within the via of the dielectric layer, overlying and in contact with the resistive switching material formed within the via, the second electrode material comprising at least a conductive material, and wherein the second electrode material forms a second electrode of the resistive switching device.