1. A method for forming a non-volatile memory device comprises: forming a resistive switching layer comprising an amorphous silicon-bearing material in electrical contact with a first conductive material layer disposed within a substrate; disposing a barrier layer comprising a non-noble metal-containing material adjacent to and in contact with at least a portion of the switching layer; disposing an active metal layer comprising a noble metal-containing material adjacent to and in contact with at least a portion of the barrier layer, wherein the active metal layer is substantially free of oxygen as-deposited, and wherein particles of the active metal layer are selectively configured to form a filament structure within the amorphous silicon-bearing material; and forming a second conductive material in electrical contact with the active metal layer, wherein the non-volatile memory device is configured to transition to a low resistance state in response to a positive program voltage and to transition to a high resistance state in response to a negative erase voltage.