1. A memory device, comprising at least one spintronic element adapted for representing a state from among at least n states associated with the spintronic element, n>1, each of the n states being associated with at least one characteristic of a set of magnetic skyrmions in the spintronic element, and said characteristic associated with a state n ∘ i being distinct from said characteristic associated with a state n ∘ j when the states n ∘ i and j are two distinct states from among the n states.