1. A memory element, comprising: a first electrode, a memory layer, and a second electrode in this order, wherein, the memory layer includes (a) a resistance change layer on the first electrode, (b) an ion source layer, (c) an intermediate layer between the resistance change layer and the ion source layer, the intermediate layer containing at least a chalcogen element selected from tellurium (Te), sulfur (S), and selenium (Se), and (d) a barrier layer between the ion source layer and the resistance change layer, the barrier layer containing at least one transition metal, the barrier layer having a surface in contact with the intermediate layer.