1. A non-volatile storage system, comprising: a three-dimensional non-volatile memory including a target memory cell, the three-dimensional non-volatile memory is monolithically formed in one or more physical levels of memory cells having active areas disposed above a substrate; and one or more managing circuits in communication with the three-dimensional non-volatile memory, the one or more managing circuits configured to determine whether the target memory cell is within a high boosting environment, the one or more managing circuits configured to determine whether the target memory cell is programmed into a highest programming state of a plurality of programming states, the one or more managing circuits configured to perform a second sensing of the target memory cell between a first substate of the highest programming state and a second substate of the highest programming state, the one or more managing circuits configured to determine a stored data value based on the second sensing if the target memory cell is determined to be within the high boosting environment and the target memory cell is determined to be programmed into the highest programming state.