1. A method for managing memory comprising: receiving command signals for performing flash memory access operations in a first sequence of execution, each of said command signals include an erase command and at least one of a read command and a write command; determining one or more attributes of the command signals; determining an association of the read command and the write command based, at least in part, on the one or more attributes of the subset of the command signals; determining the write command precedes the read command in the first sequence of execution; promoting the read command in the first sequence of execution to a position subsequent the write command; determining a first command signal replaces data in a first cell of a same block in the flash memory and a second command signal replaces data in a second cell of the same block, the first cell different from the second cell, the first command signal includes a first command configured to erase the same block, the second command signal includes a second command configured to erase the same block; merging the first command and the second command to generate a combined command signal that replaces data in both the first cell and the second cell, the combined command signal reduces a number of times the same block is erased by including a single command configured to erase the same block; generating a second sequence of execution including the promoted read command and the combined command, the second sequence of execution including less commands than the first sequence of execution; and executing the second sequence to perform access operations on a flash memory.