1. A resistance change memory comprising: a memory cell array in which a plurality of blocks are provided; a plurality of resistance change storage elements which are provided in the plurality of blocks and which store data in accordance with a change in resistance state; a plurality of first wirings along a first direction in the plurality of blocks, each of the first wirings being connected to each of the plurality of resistance change storage elements; a plurality of second wirings along a second direction in the plurality of blocks, each of the second wirings being connected to each of the plurality of resistance change storage elements; and a control circuit which controls the state of a selected block targeted for operation and the state of a plurality of unselected blocks except the selected block among the plurality of blocks, wherein the control circuit respectively applies first and second unselect potentials to the first and second wirings in at least one of the unselected blocks during a period in which the selected block is in operation; wherein the unselected block in which the first and second unselect potentials are respectively applied to the first and second wirings is a next selected block to be targeted for operation after the selected block; wherein during a period in which the control circuit is operating the selected block, the control circuit does not apply the first and second unselect potentials to the first and second wirings in the unselected blocks except the next selected block.