1. A linear carbon nanotube field effect transistor comprising: a substrate; a source electrode; a drain electrode; a carbon nanotube, wherein the carbon nanotube forms a channel between the source electrode and the drain electrode; a gate dielectric, wherein the gate dielectric has a dielectric constant κ that is greater than or equal to 15 for dielectrics over 30 nm thick, a dielectric constant that is greater than or equal to 7 for dielectrics between 3 nm and 30 nm in thickness, or a dielectric constant greater than or equal to 4 for dielectrics under 3 nm thick; and a gate electrode separated from the carbon nanotube by the gate dielectric, wherein an input radio frequency voltage is applied to the gate electrode, wherein the substrate comprises quartz.