1. A method of operating a flash device ( 100 ), comprising; erasing a portion of or an entire of the flash memory by changing a voltage state of a single program and erase entity ( 402 ) of the flash device to a high voltage state, the single program and erase entity comprising two adjacent dual bit physical memory cells ( 404 , 406 ) of the flash memory as a single logical cell; and programming the portion of or the entire of the flash memory by changing a voltage state of the single program and erase entity to a low voltage state.