1. A magnetic random access memory (MRAM) multi-level cell comprising: at least one transistor for access control; and a cluster of N probabilistic bi-stable switching elements, the cluster having a first cluster programming current terminal and second cluster programming current terminal, the probabilistic bi-stable switching elements being coupled in a cluster topology wherein, in response to receiving a programming current passing from one of the first cluster programming current terminal and the second cluster programming current terminal, the cluster has a non-zero probability of switching into at least N+1 possible levels of resistivity.