1. A thermal spin torque transfer magnetoresistive random access memory (MRAM) apparatus, comprising: a magnetic tunnel junction comprising a reference layer having a fixed magnetic polarity, a tunnel barrier layer, and a free layer on an opposite side of the tunnel barrier layer from the reference layer, the free layer comprising a first layer having a first Curie temperature and a second layer having a second Curie temperature different from the first Curie temperature; and a tunnel junction programming circuit configured to apply a current through the magnetic tunnel junction to generate a write temperature in the magnetic tunnel junction and to write to the free layer of the magnetic tunnel junction.