1. A method comprising: in a data storage device including a controller and a non-volatile memory that includes a three-dimensional (3D) memory and circuitry associated with operation of memory cells of the 3D memory, performing: receiving, at the controller, first data and second data to be stored at the non-volatile memory; and sending, from the controller, the first data, the second data, and dummy data to the non-volatile memory to be stored at respective logical pages of a single physical page in the non-volatile memory, wherein the single physical page includes multiple storage elements that are programmable into multiple voltage states according to a mapping of bits to states, and wherein the dummy data is selected to prevent a storage elements of the single physical page from being programmed to a highest voltage state of the multiple voltage states and includes a bit value that prevents a particular storage element of the single physical page from being programmed to the highest voltage state by prohibiting a particular data value corresponding to the highest voltage state from being stored at the particular storage element to reduce a cross-coupling effect between the particular storage element and storage elements adjacent to the particular storage element and to reduce a capacitance associated with the particular storage element.