1. A method of making an IGFET, comprising the steps of: providing a semiconductor substrate with a device region that includes a source region, a drain region and a channel region therebetween; forming a gate over the channel region; introducing a threshold adjust dopant into the channel region after forming the gate without transferring essentially any of the threshold adjust dopant through the gate, thereby adjusting a threshold voltage of the IGFET; and forming a source in the source region and a drain in the drain region.