1. In the class of semiconductor binary memory cells wherein a semiconducting material and a first electrode in proximity to and insulated from said semiconducting material are utilized to form in said semiconducting material a first localized minimum potential energy region for one polarity of the mobile charge carriers in said semiconducting material, a second electrode in proximity to and insulated from said semiconducting material is utilized to form in said semiconducting material a second localized minimum potential energy region for said polarity of mobile charge carriers, a one is stored in a memory cell by maintaining a relatively large number of said polarity of mobile charge carriers in said first localized minimum potential energy region and maintaining a relatively small number of said polarity of mobile charge carriers in said second localized minimum potential energy region, and a zero is stored in said memory cell by storing a relatively small number of said polarity of mobile charge carriers in said first localized minimum potential energy region and storing a relatively large number of said polarity of mobile charge carriers in said second localized minimum potential energy region, a method of recalling the datum stored in the said memory cell, comprising the steps of forming in said semiconducting material a third localized minimum potential energy region for said polarity of mobile charge carriers such that if a relatively large number of mobile charge carriers of said polarity are in the said first localized minimum potential energy region, some of these said charge carriers transfer to the said third localized minimum potential energy region, altering said third localized minimum potential energy region such that most of any of the said polarity of mobile charge carriers which had previously transferred from said first localized minimum potential energy region, transfer back to said first localized minimum potential energy region, detecting any change in capacitance between said first electrode and the said semiconducting material resulting from said transfers of mobile charge carriers between said first and said third localized minimum potential energy regions, and interpreting a relatively large change in the said capacitance between said first electrode and said semiconducting material as indicating a one was stored in said memory cell, and interpreting the absence of a relatively large change in the said capacitance between said first electrode and said semiconducting material as indicating a zero was stored in said memory cell.