1. A non-volatile semiconductor memory device comprising: a memory cell array, having plural memory cells arranged in a matrix form at the respective cross points of plural word lines and plural bit lines; a writing unit, disposed every bit line for carrying out a butch writing operation of writing data in to pages comprising the plural memory cells; a writing unit activation state setter, setting to an active state or non-active state at least one of first group writing unit for carrying out a writing operation of a first group connected to even-numbered bit lines into memory cells and a second group writing unit for carrying out a writing operation of a second group connected to odd-numbered bit lines into memory cells; and a word line selector, selecting one or two word lines from the plural word lines.