1. A memory component comprising: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein, (a) the memory layer includes (1) an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and (2) a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide, and (b) the resistance variable layer has a configuration in which a first layer made of at least one of the transition metal oxide and the transition metal oxynitride and a second layer containing the aluminum oxide as its main component are layered in that order proceeding from the side of the first electrode.