1. A non-volatile resistive-switching memory element comprising: a first electrode comprising doped silicon having a first work function; a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV); a metal oxide switching layer between the first electrode and the second electrode, the metal oxide layer: switches using bulk-mediated switching; has a bandgap of greater than 4 eV; and wherein the memory element switches from a low resistance state to a high resistance state and vice versa.