1. A method of forming a chalcogenide material containing device, the method comprising the acts of: forming a stack of one or more layers over a substrate, the stack including at least one layer of chalcogenide material and at least one metal containing layer; forming a protective layer over the stack, the protective layer blocking light, being conductive, and being etchable with the other layers of the stack, the metal of the metal containing layer being substantially insoluble in the protective layer; patterning the stack and the protective layer; and etching the stack and the protective layer.