1. A method of forming a non-volatile memory device, comprising: providing a substrate having a surface region; forming a first dielectric material overlying the surface region of the substrate; forming a first electrode structure overlying the first dielectric material; forming a polycrystalline silicon germanium material overlying the first electrode structure, the polycrystalline silicon germanium material having a first p+ impurity characteristic; forming a polycrystalline silicon material overlying the first electrode structure using the polycrystalline silicon germanium material as a seed layer, the polycrystalline silicon material being formed at a deposition temperature ranging from about 430 Degree Celsius to about 475 Degree Celsius, the polycrystalline silicon material being characterized by a second p+ impurity characteristic; forming a resistive switching material overlying the polycrystalline silicon material; and forming a second electrode structure overlying the resistive switching material, the second electrode structure comprising at least a portion comprising an active conductive material overlying the resistive switching material.