1. A method comprising: programming the memory cell using a first programming parameter to obtain a first programmed resistance value; programming the memory cell using a second programming parameter to obtain a second programmed resistance value if the first programmed resistance value is outside a target resistance value range, wherein a value of the second programming parameter is a function of a value of the first programming parameter and a value of a first adjusted programming parameter amount; programming the memory cell using a third programming parameter to obtain a third programmed resistance value if programming the memory cell using the second programming parameter is performed and if the second programmed resistance value is outside the target resistance value range, wherein a value of the third programming parameter is a function of the value of the second programming parameter and a value of a second adjusted programming parameter amount; wherein the value of the second adjusted programming parameter amount is equal to the value of the first adjusted programming parameter amount if each of the first and second programmed resistance values is outside the target resistance value range and less than a target resistance value; wherein the value of the second adjusted programming parameter amount is equal to the value of the first adjusted programming parameter amount if each of the first and second programmed resistance values is outside the target resistance value range and greater than the target resistance value; and wherein the value of the second adjusted programming parameter amount is less than the value of the first adjusted programming parameter amount if each of the first and second programmed resistance values is outside the target resistance value range and if one of the first and second programmed resistance values is less than the target resistance value and the other one of the first and second programmed resistance values is greater than the target resistance value.