1. An integrated circuit device comprising: a memory cell consisting essentially of an electrically floating body transistor, wherein the electrically floating body transistor comprises: a source region; a drain region; a body region disposed between the source region and the drain region, wherein the body region is electrically floating; and a gate disposed over the body region; circuitry, coupled to the memory cell, to write a data state into the memory cell and to read the data state of the memory cell; wherein, in response to write control signals applied to the electrically floating body transistor, the electrically floating body transistor stores a charge which is representative of a data state of the memory cell in the body region of the electrically floating body transistor; and wherein, in response to read control signals applied to the electrically floating body transistor, the electrically floating body transistor generates a bipolar transistor current which is representative of the data state of the memory cell and wherein the circuitry determines the data state of the memory cell based on a signal which is representative of the bipolar transistor current of the electrically floating body transistor.