1. A method for producing a model of a memristor device, comprising the steps of inputting a periodic signal into a memristor, said periodic signal having a minimum voltage amplitude, a maximum voltage amplitude, and a frequency; measuring and recording the output current of said memristor at a plurality of discrete time intervals over at least one period of said periodic signal; plotting said output current versus said input voltage over said at least one time period of said periodic signal; plotting said output current versus time over said at least one time period of said periodic signal; determining a high resistance state R on of said memristor from the slope of the high resistance portion of said plotted output current versus said input voltage; determining a low resistance state R off of said memristor from the slope of the low resistance portion of said plotted output current versus said input voltage; determining, from said plotted output current versus said input voltage a low threshold voltage T l at which said memristor transitions from a high resistance state to a low resistance state, and a high threshold voltage T h at which said memristor transitions from a low resistance state to a high resistance state; determining from said plot of output current versus time the value of a magnitude fitting parameter K h1 when said input voltage is positive; determining from said plot of output current versus time the value of a curvature fitting parameter K h2 when said input voltage is positive; determining from said plot of output current versus time the value of a magnitude fitting parameter K 11 when said input voltage is negative; determining from said plot of output current versus time the value of a curvature fitting parameter K 12 when said input voltage is negative; and WHEN said input voltage V in is greater than said high threshold voltage T h , THEN generating a model of said memristor device according to the expression R mem ( t ) = R mem ( t - Δ t ) - Δ tK h 1  K h 2 ( V in ( t ) - T h ) { if R mem ( t ) < R on else R mem ( t ) = R on WHEN said input voltage V in is less than said low threshold voltage T l , THEN generating a model of said memristor device according to the expression R mem ( t ) = R mem ( t - Δ t ) - Δ tK l 1  K l 2 ( V in ( t ) - T l ) { if R mem ( t ) > R off else R mem ( t ) = R off where R mem (t) is the resistance of said memristor at time t; R mem (t−Δt) is the resistance of said memristor at time t−Δt; R on is the resistance of said memristor in its high resistance state; R off is the resistance of the memristor in its low resistance state; R in is the voltage input to the memristor; T l is the low threshold voltage of said memristor; L h is the high threshold voltage of said memristor; K h1 is the magnitude fitting parameter when said input voltage is positive; K h2 is the curvature fitting parameter when said input voltage is positive; K 11 is the magnitude fitting parameter when said input voltage is negative; K 12 is the curvature fitting parameter when said input voltage is negative; and Δt is the minimum integral time step parameter between successive memresistor resistance measurements.