1. A method of managing random defects in a memory device comprising: receiving an incoming address identifying a memory location to be accessed in a memory array of the memory device, the memory array being made of a plurality of memory cells, the incoming address including a row address and a column address, a row address and a column address identifying a memory location of a memory cell of the memory array, the column address belonging to a group of column addresses that are associated with a plurality of row addresses, each of the associated plurality of row addresses of a group of column addresses identifying no more than one defective memory cell; determining whether or not the incoming address identifies a defective memory cell; and if the incoming column address identifies a defective memory cell, identifying an alternate column address; for each group of column addresses, identifying a defective column address using the incoming row address; comparing the incoming column address to the defective column address of each group; and if a match is found between the incoming column address and the defective column address of any of the groups, replacing the incoming column address with the alternate column address to be used for identifying an alternate memory location in the memory array; determining whether or not the incoming row address is associated with a defective memory cell; and if it is determined that the incoming row address is associated with a defective memory cell, replacing the incoming row address with an alternate row address for identifying the alternate memory location in the memory device.