1. A magnetic random access memory manufacturing method comprising: forming a switching element on a semiconductor substrate; forming a first wiring above the switching element; forming, on the first wiring, a magnetoresistive effect element having a fixed layer, a recording layer, and a nonmagnetic layer formed between the fixed layer and the recording layer; forming a first side insulating film on side surfaces of the first wiring, and the magnetoresistive effect element; forming a first interlayer insulating film covering the magnetoresistive effect element; forming a first contact hole which exposes a portion of the first side insulating film; forming, in the first contact hole, a first contact connecting to the switching element; forming a second wiring above the first contact and the magnetoresistive effect element to electrically connect the magnetoresistive effect element and the switching element by the second wiring; and forming a second interlayer insulating film on the second wiring.