1. A method for programming a non-volatile memory device, comprising: concurrently boosting channels of a first set of memory cells in a selected memory string and a second set of memory cells in an unselected memory string of the memory device, wherein boosting channels of the first set of memory cells in the selected memory string and the second set of memory cells in the unselected memory string comprises applying a first bias voltage to a control gate of a first select transistor in the selected memory string and to a control gate of a second select transistor in the unselected memory string, wherein the first bias voltage maintains the first and second select transistors in an off state; discharging the boosted channels of the first set of memory cells in the selected memory string; and programming a selected memory cell in the first set of memory cells in the selected memory string after discharging the boosted channels of the first set of memory cells in the selected memory string.