1. An electrically erasable and programmable memory (MEM2), comprising a memory array (MA2) containing memory cells (CEL) connected to word lines (WLi) and to bit lines (BLj), the bit lines being arranged in columns (COL0-COL n−1 ), the memory array comprising at least a first special zone (B1) for storing special bits of a first type and at least a second special zone (B2) for storing special bits of a second type, characterised in that: the first special zone comprises at least a first row of memory cells (C10-C17) connected to a first word line (WL m ), wherein N1 memory cells (C15-C17) are connected to N1 bit lines (BL 5 -BL 7 ) of at least a determined column (COL0) of the memory array comprising M bit lines, the second special zone comprises at least a second row of memory cells (C20-C27) connected to a second word line (WL m&plus;1 ), wherein N2 memory cells (C20-C24) are connected to N2 other bit lines (BL 0 -BL 4 ) of the said determined column (COL0) of the memory array, the N1 bit lines (BL 5 -BL 7 ) of the determined column which are connected to the N1 memory cells (C15-C17) of the first row are not connected to memory cells (C25-C27) of the second row, and the N2 bit lines (BL0-BL 4 ) of the determined column which are connected to the N2 memory cells (C20-C24) of the second row are not connected to memory cells (C10-C14) of the first row.