1. A method for resistive memory sensing, comprising: performing a voltage based multiple pass sensing operation on a group of cells coupled to a selected conductive line of an array of resistive memory cells, the voltage based multiple pass sensing operation including: providing an indication of those cells of the group that conduct at least a threshold amount of current responsive to one of a number of different sense voltages successively applied to the selected conductive line during each of a corresponding number of the multiple passes; and for each successive pass of the multiple passes, disabling data lines corresponding to those cells determined to have conducted the threshold amount of current in association with a previous one of the multiple passes.