1. A method of memristor cell read margin enhancement, the method comprising: programming a first switched memristor sub-bit of a memristor cell with a first resistive state; and programming a second switched memristor sub-bit of the memristor cell with the first resistive state, the second switched memristor sub-bit being connected in series with the first switched memristor sub-bit, wherein a read margin of the memristor cell is increased relative to a read margin of either of the first switched memristor sub-bit or the second switched memristor sub-bit.