1. A method for forming a silicide layer, comprising: providing a Si-containing polycrystalline region having a Si grain size; converting the Si-containing polycrystalline region to a Si-containing amorphous region; annealing the Si-containing amorphous region to form a regrown polycrystalline region having an increased Si grain size; and forming a silicide layer by reacting a metal and the regrown polycrystalline region having the increased Si grain size.