1. A method of forming a memory element, the method comprising: forming a first electrode such that a first end of the first electrode is larger than a second end of the first electrode, wherein forming the first electrode comprises depositing a conductive material and rotating the substrate while depositing the conductive material; forming a second electrode; and forming a resistance variable material layer between the first and second electrodes, the second end of the first electrode being formed in contact with the resistance variable material.