1. A semiconductor device, comprising: a gate electrode; a gate insulating layer located above the gate electrode; an active layer located above the gate insulating layer; an insulating fill layer located above the active layer; a first opening and a second opening located in the insulating fill layer; a first source or drain electrode located in the first opening; a second source or drain electrode located in the second opening; and wherein at least one of the first and the second source or drain electrodes comprises a polysilicon layer and a metal silicide layer.