1. A method to determine a value of a memory cell of a flash memory device, the method comprising: detecting a cell threshold voltage level of the memory cell; determining an interference voltage level of an interference cell that interferes with the memory cell; and decoding the cell threshold voltage level in accordance with a set of probabilities to determine the value of the memory cell, the set of probabilities associated with a minimization of a linear program that represents inter-cell interference between the memory cell and the interference cell.