1. A magnetic memory device comprising: a magnetic tunnel junction comprising a free magnetic layer having a magnetization orientation that is switchable between a high resistance state magnetization orientation and a low resistance state magnetization orientation; and a memristor solid state element electrically coupled to the magnetic tunnel junction, the memristor comprises a varying resistance layer, the varying resistance layer comprising a high resistance layer and a low resistance layer and a thickness of the high resistance layer and a thickness of the low resistance layer change as a function of an amount of charge passing thorough the memristor solid state element.