1. A method for page writes for triple level cell, or higher level cell, flash memory, comprising: receiving data in a storage system, from a client that is agnostic of page write requirements for the triple level cell, or higher level cell, flash memory, wherein the page write requirements specify an amount of data and a sequence of writing data for a set of pages to assure read data coherency for the set of pages; accumulating the received data, in random-access memory (RAM) in the storage system to satisfy the page write requirements for the triple level cell, or higher level cell, flash memory in the storage system; and writing at least a portion of the accumulated data in accordance with the page write requirements, from the RAM to the triple level cell, or higher level cell, flash memory in the storage system as an atomic write, wherein the page write requirements for the triple level cell, or higher level cell, flash memory comprise writing a lower page, an upper page and an extra page to assure read coherency of cells, and the writing at least the portion of received data comprises writing the lower page, the upper page and the extra page as the atomic write.