1. A method of writing data in a memory cell array, in which two-terminal structured memory cells each having a variable resistive element capable of storing data according to an electric resistance change by application of an electric stress are arranged in a row and column direction, a plurality of word lines extending in the row direction and a plurality of bit lines extending in the column direction are provided, the memory cells on a same row are connected at one end to a common word line, and the memory cells on a same column are connected at the other end to a common bit line, the method comprising: writing data sequentially in a plurality of memory cells on a same row or a same column in the memory cell array based on a writing order of the plurality of memory cells to be written determined according to a memory cell wiring length and a number of memory cells in a high resistance state in all other memory cells other than the one memory cell to be written on a same wiring, wherein the memory cell wiring length is defined by length of the same wiring of a selected word line or a selected bit line which is connected to the memory cell to be written from an electric connection point between a write voltage applying circuit and the same wiring to the memory cell to be written, and the write voltage applying circuit applies a voltage for writing data to the selected word line or the selected bit line, wherein the connection point is on said wiring of a selected word line or a selected bit line, and wherein the writing order of the plurality of memory cells to be written which are same in the direction of change in the value of the electric resistance is determined such that the longer the memory cell wiring length of one memory cell to be written is, the larger a number of memory cells in a high resistance state in all of the memory cells than the one memory cell to be written on the same wiring is.