1. A method of forming a semiconductor device, the method comprising the steps of: forming a fin body, wherein the fin body has a first portion with a sidewall on a first plane that provides a first carrier mobility, and wherein the fin body has a second portion with a sidewall on a second plane that provides a second carrier mobility; forming a transfer transistor at the first portion of the fin body; and forming a latch transistor at the second portion of the fin body, wherein the transfer transistor comprises an n-channel transistor and wherein the latch transistor comprises an n-channel transistor, wherein the transfer transistor and the storage transistor are formed as part of a memory cell, and wherein the transfer transistor is coupled to pass data to the storage transistor.