1. A coated electronic substrate prepared by a process comprising: applying a coating comprising hydrogen silsesquioxane resin on an electronic substrate; heating the coated electronic substrate to a temperature sufficient to convert the hydrogen silsesquioxane resin to an Si--O containing ceramic coating; and exposing the Si--O containing ceramic coating to an annealing atmosphere containing hydrogen gas for a time and at a temperature sufficient to anneal the coating, wherein the dielectric constant of said annealed Si--O containing ceramic coating is less than 3.2 at 1 MHz.