1. A method of operating a resistance variable memory cell, comprising: applying a programming signal to the resistance variable memory cell to program the cell to a target state; and subsequently applying a pre-read signal to the resistance variable memory cell to accelerate a drift of a resistance of the programmed resistance variable memory cell, wherein applying the pre-read signal comprises: stopping the applying of the pre-read signal at a desired point of operation; performing an action on the resistance variable memory cell; and restarting the application of the pre-read signal in response to completion of the performance of the action, wherein the action comprises at least one of programming the resistance variable memory cell or reading the resistance variable memory cell.