1. A ternary content addressable memory (TCAM) cell comprising: a first resistive memory element, having a first pair of terminals which are coupled to a true data bit line node and a common node, respectively; a second resistive memory element having a second pair of terminals which are coupled to a complement data bit line node and the common node, respectively; a third resistive element having a third pair of terminals which are coupled to the common node and a word line node, respectively; and a first switching element comprising a control terminal coupled to the common node.