1. A method for managing a memory device, the memory device comprising at least one non-volatile (NV) memory element, each NV memory element comprising a plurality of blocks, the method comprising: sending a last writing command to a specific NV memory element within the NV memory element, to write a set of data to a specific block of the specific NV memory element, rather than sending either a first writing command or a second writing command to the specific NV memory element, wherein the first writing command, the second writing command and the last writing command are used to write a same data into a same location in the NV memory element at different times, respectively, to ensure that the same data is stored correctly; and after the set of data is written to the specific block, sending a read command to the specific NV memory element to read stored data of the set of data from the specific block, and checking whether the stored data matches the set of data to determine whether the specific block is a bad block.