1. A method of forming a memory device, comprising: providing a substrate having a surface region; forming a first thickness of dielectric material overlying the surface region; subjecting the first thickness of dielectric material to a first patterning and etching process to form a first opening structure in a portion of the first thickness of dielectric material; depositing a first wiring material comprising at least a silver material to fill the opening structure and forming a thickness of the first wiring material overlying the first dielectric material; depositing a switching material comprising an amorphous silicon material overlying the first wiring material; subjecting at least the switching material and the thickness of the first wiring material to a first patterning and etching process to form one or more first structures, the first structures comprising a switching element and a first wiring structure comprising at least the first silver material, the first wiring structure being elongated in shape and spatially configured to extend in a first direction; depositing a second thickness of dielectric material overlying the one or more first structures; forming a via opening in the second thickness of dielectric material overlying at least a first portion of the switching element in each of the one or more first structure; and forming a second wiring structure overlying the switching element, the second wiring structure comprising at least a second silver material and having a first portion in the via and being in electrical contact with at least a second the portion of the switching element, and a second portion elongated in shape and spatially configured to extend in a second direction orthogonal to the first direction.