1. A method of forming a non-volatile resistance variable device, comprising: forming a first conductive electrode material on a substrate; forming a metal doped chalcogenide comprising material over the first conductive electrode material, the chalcogenide material comprising the metal and A x B y, where “B” is selected from the group consisting of S, Se and Te and mixtures thereof, and where “A” comprises at least one element which is selected from Group 13, Group 14, Group 15, or Group 17 of the periodic table; forming a passivating material over the metal doped chalcogenide comprising material; and depositing a second conductive electrode material over the passivating material, and forming the second conductive electrode material into an electrode of the device.