1. A method comprising: forming a dielectric containing hafnium oxide doped with dysprosium by applying a number of deposition cycles of a monolayer or partial monolayer sequencing process including applying a first number of deposition cycles of the monolayer or partial monolayer sequencing process to provide hafnium and applying a second number of deposition cycles of the monolayer or partial monolayer sequencing process to provide dysprosium; and selecting the first number and the second number to provide a selected amount of dysprosium in the hafnium oxide.