1. A CMOS-compatible fabrication method for forming a semiconductor device, comprising: receiving a substrate comprising a plurality of CMOS devices and a first terminal comprising a conductive metal layer; forming a conductive layer adjacent to and in physical contact with the first terminal; depositing silicon in an ambient environment comprising oxygen to form an interface layer with a thickness in a range of about 1 nanometer to about 8 nanometers, wherein the interface layer is adjacent to and in physical contact with the conductive layer, wherein the interface layer comprises a silicon sub-oxide with a chemical formula of SiO x , where 0<X<2; depositing an active metal layer adjacent to and in contact with the interface layer; wherein the interface layer is at least partially permeable to ions of the active metal layer; and wherein a second terminal is coupled to the active metal layer.