1. A method for forming a spin transfer torque magnetic random access memory (STT-MRAM) device, the method comprising: configuring a spin device model for the STT-MRAM device, comprising: configuring a library of functional blocks, wherein each functional block in the library of functional blocks is configured to generate a set of output parameters in response to receiving a set of input parameters, wherein each functional block in the library of functional blocks is configured to capture physical phenomenon associated with at least one element of the STT-MRAM device, wherein the STT-MRAM device has a configurable physical structure configured in the form of a stack, mapping selected elements of the STT-MRAM device into a corresponding set of selected functional blocks, wherein the selected elements include the stack, wherein the mapping maps the stack to the spin device circuit represented by the selected functional blocks, assembling the selected functional blocks in a configurable manner to form the spin device circuit, wherein the configurable manner replicates the physical structure of the STT-MRAM device, wherein the spin device circuit for the stack includes an electron spin transport functional block, a magnet-dynamics functional block, a magnetic coupling functional block and an coupled inter-layer Transport+Magnet-Dynamics (TMD) functional block, and generating the set of output parameters representing the behavior of the STT-MRAM device in response to receiving the set of input parameters; and forming the STT-MRAM device in an optimized configurable manner based on the set of output parameters generated.