1. A method of sequentially accessing memory cells in a nonvolatile memory device having a plurality of strings and a common signal line coupled to the plurality of strings, each string including a plurality of memory cells and a selection transistor coupled between the plurality of memory cells and the common signal line, the method comprising: receiving a command to access multiple memory cells in the nonvolatile memory device; applying a voltage to a first selection transistor of a first string in the plurality of strings to electrically connect the common signal line to the first string; applying a pulse for a predetermined time period to a second selection transistor of a second string and to a third selection transistor of a third string in the plurality of strings; and sequentially accessing first and second memory cells of the first string, wherein the step of applying the pulse is performed before completion of accessing the first memory cell and there is no pulse applied to the second and third selection transistors between the completion of accessing the first memory cell and completion of accessing the second memory cell.