1. An integrated circuit comprising: a resistivity changing memory element comprising a carbon memory element, a phase changing memory element, a conductive bridging memory element, a transition metal oxide memory element, or a magnetoresistive memory element; and a carbon Schottky diode formed at an interface between a semiconductor material and a conductive carbon material, the carbon Schottky diode electrically coupled to the resistivity changing memory element, the resistivity changing memory element and the carbon Schottky diode forming a memory cell.