1. A method for reading memory elements within a crossbar memory array, the method comprising: storing a first electric current sensed from half-selected memory elements along a selected column line within said crossbar memory array, said first electric condition resulting from bias voltages applied to at least one row intersecting said selected column line; and selecting a target memory element connected to said selected column line by applying a sense voltage to a row line connected to said target memory element; and outputting a final electric current based on said stored first electric current and a second electric current sensed from said target memory element with said sense voltage applied.