1. An integrated circuit comprising a memory cell including a resistance changing memory element, the resistance changing memory element comprising: a first electrode; a second electrode; and a resistivity changing material disposed between the first and second electrodes, wherein the resistivity changing material is configured to change resistive states in response to application of a voltage or current to the first and second electrodes; wherein at least one of the first electrode and the second electrode comprises an insulator material including a self-assembled electrically conductive element formed within the insulator material.