1. A method comprising: providing a substrate; forming a gate electrode overlying the substrate; performing a first angled metal implant at a first angle into the substrate followed by performing a second angled metal implant at a second angle, the first angled metal implant and the second angled metal implant forming a first current electrode and a second current electrode, each of the first current electrode and the second current electrode having at least two regions of differing metal composition; depositing a metal layer overlying the gate electrode, the first current electrode and the second current electrode; and annealing the metal layer to form two Schottky junctions in each of the first current electrode and the second current electrode, the two Schottky junctions having differing barrier levels.