1. A nonvolatile memory comprising: a plurality of memory blocks; and an address decoder configured to activate a block word line corresponding to the memory blocks in common when any memory block is selected among the memory blocks, supply voltages to word lines and a string selection line of the selected memory block among the memory blocks and float word lines and a string selection line of an unselected memory block among the memory blocks, wherein the address decoder comprises: for each memory block, corresponding pass transistors connected to word lines and a string selection line of the memory block and controlled in common by the block word line, and for each memory block, a corresponding block pass transistor connected between the corresponding pass transistors of the memory block and the block word line, wherein each of the corresponding block pass transistors is a depletion type.