1. A non-volatile storage system, comprising: a plurality of memory cells, the plurality of memory cells includes a first memory cell that is part of a first NAND string; and one or more control circuits in communication with the plurality of memory cells, the one or more control circuits configured to determine a location of the first memory cell within the first NAND string and configured to determine a read temperature at which the plurality of memory cells will be read, the one or more control circuits configured to determine a source line voltage based on the location of the first memory cell and the read temperature, the one or more control circuits configured to initiate a read operation to read data from the plurality of memory cells, the source line voltage is applied to a source line of the first NAND string during the read operation.