1. A method for forming a platen useful for forming nanoscale wires for device applications comprising: (a) providing a substrate having a major surface; (b) forming a plurality of alternating layers of two dissimilar materials on said substrate to form a stack having a major surface parallel to that of said substrate; (c) cleaving said stack normal to its major surface to expose said plurality of alternating layers; and (d) etching said exposed plurality of alternating layers to a chosen depth using an etchant that etches one material at a different rate than the other material to thereby provide said surface with extensive strips of indentations and form said platen useful for molding masters for nano-imprinting technology.