1. A reversible resistive memory, comprising: a plurality of reversible resistive cells, at least one of the reversible resistive cells comprising: a reversible resistive film coupled to a first supply voltage line; and a diode including at least a first active region and a second active region, where the first active region having a first type of dopant and the second active region having a second type of dopant, the second active region being isolated from the first active region, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, both the first and second active regions residing in a common well, the first active region coupled to the reversible resistive film, and the second active region coupled to a second supply voltage line, wherein the active regions are fabricated from sources or drains of CMOS devices, and the common well is fabricated from a well in CMOS, and wherein the reversible resistive film is configured to be programmable by applying voltages to the first and the second supply voltage lines to change the resistance into a different logic state in a reversible manner.