1. A method of forming a non-volatile memory device, comprising: providing a semiconductor substrate having a surface region; forming a first dielectric material overlying the surface region; forming a first wiring material comprising at least an aluminum material overlying the first dielectric material; forming a silicon material overlying the first wiring material; forming an intermix region using at least an anneal process, the intermix region consuming a portion of the silicon material and a portion of the aluminum material, the annealing process causing formation of a first alloy material from the intermix region and a polycrystalline silicon material having a p+ impurity characteristic overlying the first alloy material, the polycrystalline silicon material having the p+ impurity being derived from an aluminum species from the aluminum material and the silicon material; forming a first wiring structure from at least a portion of the first wiring material; forming a resistive switching element comprising an amorphous silicon material overlying the polycrystalline silicon material having the p+ impurity characteristic; and forming a second wiring structure comprising at least a metal material overlying the resistive switching element.