1. A semiconductor device comprising: a selector device comprising: a first electrode structure comprising a first material having a first plurality of metal particles, wherein the first material is configured to generate conductive ions of the first plurality of metal particles in response to a first voltage exceeding a first threshold voltage applied to the first electrode structure; a second electrode structure comprising a second material having a second plurality of metal particles, wherein the second material is configured to generate conductive ions of the second plurality of metal particles in response to a second voltage exceeding a second threshold voltage applied to the second electrode structure; and a selector structure comprising a selector material, disposed in contact with and in between the first electrode structure and the second electrode structure, wherein the selector material is configured to allow the conductive ions of the first plurality of metal particles to permeate therein in response to the first voltage applied to the first electrode structure, and wherein the selector material is configured to allow the conductive ions of the second plurality of metal particles to permeate therein in response to the second voltage applied to the second electrode structure; and a two-terminal memory device coupled in series with the selector device.