1. A semiconductor device comprising: a substrate; a first plurality of electrodes disposed upon the substrate, wherein each electrode from the first plurality of electrodes comprises a metal containing material; a plurality of resistive switching devices disposed overlying the plurality of first electrodes, wherein each resistive switching device from the plurality of resistive switching devices comprises a first resistive switching material, a second resistive switching material, and at least an active metal material, wherein the first resistive switching material is disposed overlying the first electrode, wherein the second resistive switching material is disposed overlying and contacting the first resistive switching material, wherein the active metal material is disposed overlying the second resistive switching material, wherein the first resistive switching material is characterized by a first switching voltage having a first amplitude, wherein the second resistive switching material is characterized by a second switching voltage having a second amplitude, and wherein the first amplitude is less than the second amplitude; a second plurality of electrodes disposed above the plurality of resistive switching devices, wherein each electrode from the second plurality of electrodes comprises the metal material, and wherein each electrode from the second plurality of electrodes is disposed overlying and electrically coupled to the active metal material of the resistive switching devices from the plurality of resistive switching devices.