1. A method for programming one or more memory cells, comprising: (a) providing the one or more memory cells, wherein each memory cell has a first side and a second side, and each of the first side and the second side of each memory cell has a threshold voltage; (b) verifying both the first side and the second side of the one or more memory cells to identify sides of memory cells to be programmed; and (c) programming only the first side of each memory cell identified to be programmed.