1. A method of reading and writing to a plurality of bits in a spin-torque magnetoresistive memory array, the method comprising: sampling the bits in the spin-torque magnetoresistive memory array; setting the bits to a first state in the magnetoresistive spin-torque memory array; resampling the bits to evaluate states of the bits; storing a value of each of the bits in one of a plurality of latches, the value being either the first state or a second state; reading the values of the bits in the latches; and initiating a first resetting of the bits in the spin-torque magnetoresistive memory array to the second state if a stored value for a bit was the second state in the plurality of latches.