1. A method for reading data from a non-volatile storage system, comprising: determining a reliability value, the reliability value is associated with whether a target memory cell is within a high boosting environment; generating a first bit based on sensing the target memory cell between a highest programming state of a plurality of programming states and a second highest programming state of the plurality of programming states; generating a high bit based on sensing the target memory cell between a first substate of the highest programming state and a second substate of the highest programming state; determining a stored data value based on the first bit, the high bit, and the reliability value; and outputting the stored data value.