1. A method for forming a resistive memory device comprising: disposing a first metallic layer above a semiconductor substrate; disposing a non-metallic conductive layer above the first metallic layer; forming an interface region above and adjacent to the non-metallic conductive layer having a negative ionic charge; disposing a switching media above and adjacent to the interface region, where the switching media includes an upper surface and a lower surface; and disposing a second metallic layer comprising a source of positive metallic ions above the switching media.