1. A switchable junction element having an intrinsic diode formed with a voltage dependent resistor, comprising: a first electrode: a second electrode; a memristive matrix comprising a semiconducting material containing mobile dopants, the memristive matrix being configured to form an electrical interface with the first electrode, the electrical interface having a programmable conductance in which the electrical interface is an ohmic interface when the mobile dopants are migrated towards the first electrode and the electrical interface is a Schottky interface when the mobile dopants are migrated away from the first electrode; and the voltage dependent resistor (VDR) in electrical contact with the memristive matrix, the voltage dependent resistor being configured to form a rectifying diode interface with the second electrode.