1. A method for optimizing a mask pattern to be imaged on a surface of a substrate, the method comprising the steps of: (a) generating a target pattern to be imaged; (b) simulating a predicted pattern from the target pattern to be formed on the surface of the substrate; (c) sectioning features of the target pattern and selecting at least two sections for evaluation; (d) computing an amount of bias needed for each of the at least two sections by factoring the influence from at least one other section of the at least two sections; and (e) modifying the target pattern according to the results of step (d) for optimizing the mask pattern.