1. A method of applying a photoresist to a semiconductor substrate in a process chamber comprising: providing said substrate having a silicon nitride layer thereon; depositing an oxynitride layer over said silicon nitride layer; depositing an antireflective coating on said oxynitride layer; introducing a photoresist mask onto said antireflective coating; and further processing said substrate with said photoresist mask to form a pattern having dimensions that are unaffected by amino group transport.