1. A method of programming non-volatile memory, comprising: programming a first set of one or more non-volatile storage elements to a first physical state; programming a second set of one or more non-volatile storage elements to said first physical state, said first physical state includes a lower minimum voltage for said second set of one or more non-volatile storage elements than for said first set of one or more non-volatile storage elements; reading said first set, said step of reading includes applying one or more first read values to determine if said one or more storage elements of said first set are programmed to said first physical state; and reading said second set, said step of reading includes applying one or more second read values to determine if said one or more storage elements of said second set are programmed to said second physical state; wherein said one or more second read values are less than said one or more first read values.