1. A method comprising: generating markers for a silicon (Si) wafer from an individual design for manufacturing (DFM) deck, the DFM deck based on rules and patterns; generating universal compact format (UCF) Indexes based on representative markers, a unique set of values of properties of each generated marker, and an occurrence count of the unique set of values of properties; determining whether a representative marker corresponding to a UCF Index is a candidate for weak point (WP) prediction on the wafer; extracting all of the markers corresponding to that UCF-Index (universal extended format (UEF) data set) from a WP prediction candidate, the UEF data set based on the values of the properties at each marker location on the wafer; performing a UCF-Index-based sampling on the extracted UEF data set if a number of markers in the extracted UEF data set is larger than an inspection requirement; adding a location of each marker or group of markers in the extracted UEF data set to a sitelist after the UCF-Index-based sampling; sending the sitelist to a foundry to perform metrology analysis on sitelist locations; and adding the sitelist locations and corresponding UCF Index and metrology parameters to a design analysis database for analyzing other Si wafers and/or other UCF Indexes.