1. A manufacturing method for a memory device comprising: forming a first conductive layer over a substrate; forming a metal oxide layer by oxidizing a surface of the first conductive layer; forming a semiconductor layer over the metal oxide layer; forming an organic compound layer over the semiconductor layer; and forming a second conductive layer over the organic compound layer, wherein the organic compound layer is capable of changing a shape thereof by applying a voltage between the first conductive layer and the second conductive layer.