1. A plasmon field effect transistor (FET), the plasmon FET comprising: a n-type semiconducting layer; a source electrode disposed at least in part on the n-type semiconducting layer; a drain electrode disposed at least in part on the n-type semiconducting layer; a gate electrode; a dielectric layer disposed between the n-type semiconducting layer and the gate electrode, the gate electrode configured to provide voltage controlled amplification when a voltage is applied to the gate electrode; a plurality of plasmonic nanostructures disposed on the n-type semiconducting layer and being electrically isolated from both the source electrode and drain electrode, the plurality of plasmonic nanostructures configured to provide plasmonic absorption of photons and affect a drain current of the plasmon FET based at least in part on the plasmonic absorption of photons.