1. A method comprising: performing a memory read operation using a first read voltage level; detecting that the memory read operation has resulted in a memory read error; and in response to detecting the memory read error includes more than one incorrect bit: performing a higher read voltage memory read operation using a higher read voltage level higher than the first read voltage level; performing a lower read voltage memory read operation using a lower read voltage level lower than the first read voltage level; and selecting a revised read voltage level for subsequent memory read operations based on the performing the higher read voltage memory read operation and the performing the lower read voltage memory read operation.