1. An integrated circuit, comprising: at least one metal-oxide-semiconductor transistors with a reversed-workfunction gate conductor, wherein the at least one metal-oxide-semiconductor transistor includes at least one n-channel metal-oxide-semiconductor transistor with a p-metal gate conductor and at least one p-channel metal-oxide-semiconductor transistor with an n-metal gate conductor; n-channel transistors with n-metal gate conductors and p-channel transistors with p-metal gate conductors; and a memory element that includes the n-channel and p-channel metal-oxide-semiconductor transistors with reversed-workfunction gate conductors.