1. A non-volatile dynamic random access memory (NVDRAM), comprising: a first bit line; a first non-volatile line; a second non-volatile line; a first select line; and a first NVDRAM cell, comprising: a first DRAM cell, coupled to the first bit line, comprising: a first capacitor having a first terminal coupled to a first storage node and a second terminal coupled to a reference; and a first transfer transistor having a first current electrode coupled to a first power supply terminal, a second current electrode coupled to the first storage node, and a control electrode; a first pass gate transistor coupled between the first bit line and the first storage node; a first non-volatile element having a first terminal coupled to the control electrode of the first transfer transistor and a second terminal coupled to the first non-volatile line; a second non-volatile element having a first terminal coupled to the control electrode of the first transfer transistor and a second terminal; a first switching transistor having a first current electrode for receiving a first program signal, a second current electrode coupled to the control electrode of the first transfer transistor, and a control electrode coupled to the first select line; and a second switching transistor having a first current electrode coupled to the second terminal of the second non-volatile element, a second current electrode coupled to the second non-volatile line, and a control electrode coupled to the first select line.