1. An EIT-based photonic logic gate, comprising at least N EIT-based stack layer(s) ( 10 ), and each said EIT-based stack layer ( 10 ) including: a photonic crystal layer ( 11 ) being made of a material having a positive refractive index, a zero refractive index or a negative refractive index, and including a first binding interface ( 111 ) and a second binding interface ( 112 ); and an EIT material layer ( 12 ) being made of hydrogen, lithium, sodium, rubidium or cesium, and having a first binding interface ( 121 ) and a second binding interface ( 122 ), wherein the second binding interface ( 112 ) of the photonic crystal layer ( 11 ) is bound to the first binding interface ( 121 ) of the EIT material layer ( 12 ); the EIT-based stack layer ( 10 ) receiving a probe field (A) incident on the first binding interface ( 111 ) of the photonic crystal layer ( 11 ) as an input probe signal, and receiving a control field (B) incident on the EIT material layer ( 12 ) as an enable signal, the probe field (A) passing through the second binding interface ( 112 ) of the photonic crystal layer ( 11 ), the first binding interface ( 121 ) and the second binding interface ( 122 ) of the EIT material layer ( 12 ) successively and then acting as an output signal, and the control field (B) having a luminous intensity that is 10 to 200 times as much as a luminous intensity of the probe field (A).