1. A method, comprising: identifying, by a computer system, a training wafer fabricated through a first semiconductor fabrication process; obtaining, by the computer system, predefined reference values for at least one parameter of the training wafer; collecting, from the training wafer by the computer system, a first set of signals for the at least one parameter of the training wafer, utilizing a first metrology tool comprised of a first hardware configuration, the collecting the first set of signals utilizing the first metrology tool performed by: a light source of the first metrology tool directing light towards one or more areas of the training wafer, and a detector of the first metrology tool receiving light reflected from the one or more areas of the training wafer, generating the first set of signals responsive to the received light, and outputting the first set of signals to the computer system; collecting, from the training wafer by the computer system, a second set of signals for the at least one parameter of the training wafer, utilizing a second metrology tool that is different from the first metrology tool by being comprised of a second hardware configuration that is different from the first hardware configuration, the collecting the second set of signals utilizing the second metrology tool performed by: a light source of the second metrology tool directing light towards the one or more areas of the training wafer, and a detector of the second metrology tool receiving light reflected from the one or more areas of the training wafer, generating the second set of signals responsive to the received light, and outputting the second set of signals to the computer system; transforming, by the computer system, at least a portion of each of: the first set of signals and the second set of signals into a third set of signals; for each of the at least one parameter of the training wafer, determining, by the computer system, a corresponding relationship between the third set of signals and the reference values; for each of the at least one parameter of the training wafer, creating, by the computer system, a training model based on the corresponding determined relationship; collecting, by the computer system, signals from a target wafer fabricated through the first semiconductor fabrication process or a second semiconductor process, utilizing at least the first metrology tool and the second metrology tool, the collecting the signals utilizing the first metrology tool performed by: the light source of the first metrology tool directing light towards one or more areas of the target wafer, and the detector of the first metrology tool receiving light reflected from the one or more areas of the target wafer, generating a first portion of the signals responsive to the received light, and outputting the first portion of the signals to the computer system, and the collecting the signals utilizing the second metrology tool performed by: the light source of the second metrology tool directing light towards the one or more areas of the target wafer, and the detector of the second metrology tool receiving light reflected from the one or more areas of the target wafer, generating a second portion of the signals responsive to the received light, and outputting the second portion of the signals to the computer system; measuring parametric values for dimensional aspects of the target wafer by applying, by the computer system, each created training model to the signals collected from the target wafer.