1. A method for operating a memory device, comprising: performing initial programming of memory cells connected to a set of word lines, the initial programming comprising programming of memory cells of each word line of the set of word lines, one word line at a time, wherein the initial programming is performed using a programming parameter set to an initial value, and the programming parameter controls a width of a threshold voltage distribution of the memory cells resulting from the initial programming of the memory cells of the word line; for each word line of the set of word lines, after the initial programming of the memory cells of the word line, determining a count of the memory cells for which a threshold voltage exceeds a read voltage; identifying one or more high-count word lines of the set of word lines for which the count exceeds an upper limit; for each word line of the one or more high-count word lines, determining a respective adjusted value of the programming parameter for use in performing subsequent programming of the memory cells of the word line; identifying one or more low-count word lines of the set of word lines for which the count is less than a lower limit, lower than the upper limit; and for each word line of the one or more low-count word lines, determining a respective adjusted value of the programming parameter for use in performing subsequent programming of the memory cells of the word line.