1. A thermodynamic RAM (Random Access Memory) circuit, comprising: a collection of kT (Thermodynamic)-Core circuits, wherein each kT-Core circuit among said collection of core kT-Core circuits comprises an AHaH (Anti-Hebbian and Hebbian) circuit, wherein at least one kT-Core circuit among said collection of kT-Core circuits couples readout electrodes together to form a larger combined kT-Core among said collection of kT-Core circuits.