1. A method comprising: programming a memory cell using a signal to cause the memory cell to have a programmed resistance value; adjusting a programming parameter value if the programmed resistance value is outside a target resistance value range; repeating at least one of the programming or the adjusting when the programmed resistance value is outside the target resistance value range, wherein the signal includes a different programming parameter value each time the programming is repeated; sensing the memory cell before programming the memory cell to obtain a resistance value of the memory cell; and skipping the programming when the resistance value is within the target resistance value range.