1. A PMOS transistor, comprising: a first source/drain region; a second source/drain region, wherein the first and the second source/drain region include source/drain regions having a large work function; a channel located between the first and the second source/drain regions; a gate opposing the channel, wherein the gate includes a p-type polycrystalline semiconductor gate having a large work function; and a gate insulator separating the gate from the channel.