1. A method for forming a patterned layer comprising: forming a mask layer over a target layer located over a substrate; etching the target layer while using the mask layer as an etch mask to provide a tapered target layer located over the substrate, the tapered target layer having a tapered end with an end taper from about 30 to about 80 degrees with respect to a plane of the substrate; forming a gate dielectric material layer directly on the tapered end and a surface of a semiconductor layer comprising a semiconductor material, wherein said semiconductor layer is different from the tapered target layer; and etching said gate dielectric material layer from above an entirety of said tapered end and from above an upper surface of said tapered layer, while an additional mask layer prevents removal of said gate dielectric material layer from above said surface of said semiconductor layer.