1. A method of forming a non-volatile memory device, comprising: providing a substrate having a surface region; depositing a first dielectric material overlying the surface region of the substrate; forming a first wiring structure overlying the first dielectric material; optionally forming a diffusion barrier material overlying and in contact with the first wiring structure; depositing a silicon material overlying the first wiring structure and in contact with the first wiring structure or optionally in contact with the diffusion barrier material, the silicon layer being characterized by a thickness of greater than 0 Angstroms but no greater than about 60 Angstroms, wherein depositing the silicon material comprises depositing the silicon material using a physical vapor deposition process; depositing a silicon germanium material at a depositing temperature ranging from about 400 Degree Celsius to about 490 Degree Celsius overlying the first wiring structure and in contact with the silicon material, using the silicon material as a seed layer, wherein the silicon germanium as-deposited being substantially free of voids and as-deposited having a polycrystalline characteristic; depositing a resistive switching material comprising an amorphous silicon material overlying and in contact with the silicon germanium material; depositing a conductive material overlying the resistive material; and forming a second wiring structure overlying the conductive material.