1. A semiconductor device, comprising: a first electrode; a metal-containing film formed on the first electrode and containing metallic atoms; a resistance change film formed on the metal-containing film and containing metal oxide; and a second electrode formed on the resistance change film, wherein the metal-containing film is composed of a substance which is easier to bond with oxygen than a substance composing the resistance change film, and a resistance of the resistance change film changes in accordance with a voltage applied between the first electrode and the second electrode.