1. A semiconductor device comprising a first thin film element and a second thin film element on an insulating substrate, the first thin film element including a metal electrode or a metal wiring on a first semiconductor thin film with an insulating film therebetween, the second thin film element including a second semiconductor layer, wherein a passivation film is formed in the first thin film element, and the passivation film is arranged only in a pixel part, and the passivation film is formed over a gate electrode in the first thin film element wherein the passivation film is in direct contact with the gate electrode.