1. A method comprising: providing a substrate; forming a gate electrode overlying the substrate; performing a first angled metal implant at a first angle into the substrate and from a first direction; performing a second angled metal implant at the first angle into the substrate but from a second direction different than the first direction, the first angled metal implant and the second angled metal implant forming a first current electrode and a second current electrode within the substrate; performing a third angled metal implant into the substrate at a second angle that is less than the first angle and from a third direction; performing a fourth angled metal implant at the second angle into the substrate but from a fourth direction different than the third direction, each of the first current electrode and the second current electrode having at least two regions of differing metal composition, the first current electrode having a composition that is symmetric with the second current electrode; depositing a metal layer overlying the gate electrode, the first current electrode and the second current electrode; and annealing the metal layer to form two Schottky junctions in each of the first current electrode and the second current electrode, the two Schottky junctions having differing barrier levels.