1. A resistance change type memory comprising: a plurality of first wirings extending in a first direction and arrayed in a second direction crossing the first direction; a plurality of second wirings extending in the second direction and arrayed in the first direction; a plurality of series circuits connected to the first and second wirings, the series circuit including a non-ohmic element being more conductive in the first to second wiring direction than in the second to first direction and a resistance change type storage element in which data is stored according to a change of a resistance state, respectively; an energy supplying circuit connected to the plurality of first wirings to supply energy to the first wirings, the energy being used to store the data in the resistance change type storage element; and at least one capacitance circuit that includes at least one capacitive element and being connected to at least one of the first wirings or at least one of the second wirings.