1. An integrated circuit comprising: a three-dimensional memory array having a first plane of memory cells disposed above a first dielectric layer disposed above a substrate, and having a second plane of memory cells disposed above a second dielectric layer disposed above the first memory plane, said memory cells comprising modifiable conductance switch devices arranged in a plurality of series-connected NAND strings; wherein each NAND string within a given memory plane includes a first switch device at a first end thereof for coupling the NAND string to an associated global bit line and further includes a second switch device at a second end thereof opposite the first end for coupling the NAND string to an associated bias node; wherein a NAND string within the first memory plane and a NAND string within the second memory plane are vertically coupled to a global bit line disposed on a first interconnect layer, and are further vertically coupled to a bias node disposed on a second interconnect layer different than the first interconnect layer.