1. A two-terminal memory cell, comprising: a first terminal; a second terminal; a two-terminal memory element; and a non-ohmic device (NOD) including a layer of metal in contact with a single layer of doped polycrystalline silicon, the contact operative to form a single Schottky diode, the Schottky diode and the two-terminal memory element are electrically in series with each other and with the first and second terminals, wherein the single layer of doped polycrystalline silicon includes a first portion that is doped n− and a second portion that is doped n+, the first portion is in contact with the layer of metal and the second portion is not in contact with the layer of metal.