1. A device comprising: a voltage supply to generate a read supply voltage; a first correlated electron switch (CES) element comprising correlated electron material; a first conducting element to connect a bitline to a terminal of the first CES element in response to a first wordline voltage signal during a read operation and a write operation, the first conducting element to permit a first current between the bitline and the terminal of the first CES element during the read operation and to permit a second current between the bitline and the terminal of the first CES element during the write operation, wherein a magnitude of the second current is greater than a magnitude of the first current; and a second conducting element to connect the first CES element between the voltage supply and a reference node during the read operation and to isolate the first CES element from the voltage supply or the reference node in the write operation, wherein the first conducting element permits a magnitude of the second current during the write operation to provide a magnitude of a current density in the correlated electron material sufficient to provide a concentration of electron holes in at least a portion of the correlated electron material for a change in an impedance state of the first CES element from a low impedance or conductive state to a high impedance or insulative state.