1. A method for forming a resistive memory device comprising: providing a substrate comprising a first metal material; forming a conductive silicon-bearing layer on top of the first metal material, wherein the conductive silicon-bearing layer comprises an upper region and a lower region, and wherein the lower region is adjacent to the first metal material; forming an amorphous layer from the upper region of the conductive silicon-bearing layer; and disposing an active metal material above the amorphous layer.