1. A method, comprising: identifying a first command signal including a write command for a first cell in a block of flash memory and a first erase command configured to erase a third cell in the block; identifying a second command signal including a write command for a second cell in the block and a second erase command configured to erase a fourth cell in the block; and merging the first command signal and the second command signal to generate a combined command signal including a write command for the first cell, a write command for the second cell, and a single erase command for the third and fourth cell of the block.