1. A variable resistance memory device comprising: a first electrode; a second electrode; a first chalcogenide material layer between the first and second electrodes, the chalcogenide layer comprising carbon incorporated into germanium selenide chalcogenide glass; a second chalcogenide material layer between the first chalcogenide material layer and the second electrode; a first metallic layer between the second chalcogenide material layer and the second electrode; and a third chalcogenide material layer between the first metallic layer and the second electrode.