1. A method of operating a magnetic random access memory (MRAM) device including a magnetic tunnel junction structure between first and second electrodes, the method comprising: providing a write current through the first electrode, through the magnetic tunnel junction structure, and through the second electrode, wherein an auxiliary switching magnetic field is generated by the write current through the first electrode, wherein a portion of the auxiliary switching magnetic field passes through the magnetic tunnel junction structure in a direction perpendicular to a direction of the write current through the magnetic tunnel junction structure, and wherein a magnitude of the write current and/or the auxiliary switching magnetic field is sufficient to change a program state of the magnetic tunnel junction structure.