1. A method comprising: forming a first electrode of a memory cell, the first electrode comprising a first material; forming a second electrode of the memory cell, the second electrode comprising a second material; and forming a dielectric material between the first electrode and the second electrode, the dielectric material facilitating forming of a conductive path through the dielectric material to represent a first value of information stored in the memory cell and breaking of the conductive path to represent a second value of information stored in the memory cell, wherein forming the first electrode, the second electrode, and the dielectric material includes: forming multiple materials over a substrate, and patterning the multiple materials to form strips of materials, wherein the multiple materials include the second material; and after the strips of materials are formed, forming the dielectric material over the strips of materials, forming the first material over the dielectric material, and patterning the first material, the dielectric material, and the strips of materials to form pillars of materials, wherein a first pillar of the pillars of materials includes a portion of one of the strips of materials, a portion of the dielectric material, and a portion of the first material.