1. A method of forming a memory cell comprising a chalcogenide glass with the formula A x B 100−x , the method comprising: providing a metal-chalcogenide material in contact with the chalcogenide glass; and applying a conditioning voltage that forms bonds between a component of the chalcogenide glass and a component of the metal-chalcogenide material, thereby forming a conducting channel within the chalcogenide glass, wherein the memory cell has a first memory state and a second memory state, and the conducting channel is present in the chalcogenide glass layer in both said first memory state and said second memory state.