1. A method of programming One-Time Programmable (OTP) memory, comprising: providing a plurality of OTP cells, at least one of the OTP cells including at least: an OTP element having a first terminal coupled to a first supply voltage line, the at least one OTP element having a resistance; and a selector coupled to the OTP element with at least one enable signal coupled to a second and/or a third supply voltage line, and one-time programming the at least one of the OTP cells into a different logic state by applying one or more voltage or current pulses above a low program threshold and below a high program threshold to the at least one of the OTP cells via the first, the second, and/or the third supply voltage lines to turn on the selector and to thereby change the resistance of the OTP element of the at least one OTP cell into a different logic state, wherein the at least one of the OTP elements includes or couples to an extended area that facilitates accelerated programming, wherein the at least one selector comprises at least one electronic component including at least a first active region and a second active region, and wherein the electronic component comprises at least one MOS gate, the first active region having a first type of dopant and a second active region having a first or second type of dopant, the first active region providing a first terminal of the electronic component, the second active region providing a second terminal of the electronic component, both the first and second active regions residing in a common CMOS well or on an isolated substrate, the at least one of the first and second active regions being fabricated from sources or drains of CMOS devices.