1. A method of forming a memory cell comprising the steps of: forming a chalcogenide feature having at least two stable electrical resistance states; and forming a transition metal oxide feature having at least two stable electrical resistance states; wherein at least two bits of data can be concurrently stored in the memory cell by placing the chalcogenide feature into one of the at least two stable electrical resistance states of the chalcogenide feature and by placing the transition metal oxide feature into one of the at least two stable electrical resistance states of the transition metal oxide feature.