text: Tientalle jaore later höbbe vorderinge in multi-gate technologie veur de sjaoling vaan metal–oxide–semiconductor field-effect transistor (MOSFET) gezörg op nanosjaol, kleiner daan ‘n gatelengte vaan 20 nm, beginnend met de FinFET (fin field-effect transistor), ‘n drei-dimensionaal, neet-vlak, twee-gate MOSFET.