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<p>Silicon-on-insulator bipolar transistors fabricated using the Harris UHF-1 process, were irradiated at room temperature with 30 and 60 MeV electron beams. Some of the transistors on each die were configured and biased as a simple operational amplifier (opamp), one was placed in a common emitter type circuit and the remaining were biased to measure transistor parameter degradation. The purpose of this setup was to observe the total dose effects of the transistor and of an opamp on the same die in order to derive a more accurate model of an opamp under total dose conditions. This investigation was successful in conducting in-situ measurements of opamp gain and 3dB frequency while also measuring the current gain of similar transistors on the same die. (MM)
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<br>Subjects:</div>
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Brittain, Donald R.</div>
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