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<p>This thesis looks at modeling Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT)  Semiconductors. The GaN device has potential future military use in the high power and high frequency operation  replacing costly millimeter wave tubes. This would affect military radar systems, electronic surveillance systems,  communications systems and high voltage power systems by providing smaller and more reliable devices to drive  operation. This thesis looks at using diamond substrate to improve the thermal management of a HEMT device over  that of a sapphire substrate. The improved thermal management should lead to improved operating characteristics and  reliability. The HEMT device was modeled using Silvaco software package and compared to an actual device on  sapphire substrate. The HEMT modeling was done in two and three dimension modeling software. The results of the  software model showed the improved thermal characteristics of the HEMT device on the diamond substrate over that  of the sapphire.
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<br>Subjects: Electrical engineering; Gallium nitride; Modeling</div>
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Gibson, William A.</div>
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