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<p>In this work, a physics-based simulation of non-ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor was created. Based on physical results of 2.0-MeV protons irradiation to fluence levels of 6 1014 protons cm2, the simulation was tuned to match electron mobility n and then compared to threshold voltage Vth on state resistance Ron and transconductance gm. A Monte Carlo simulator was used to model two particle interactions utilizing the Kinchin and Pease model. The model was developed in Silvaco ATLAS, but the Athena and Victory Stress modules were also utilized. After comparison of changing characteristics between the model and the physical device at 2.0-MeV proton irradiation, predictions were made for 5.0, 10.0, 20.0 and 40.0-MeV proton irradiation. The model generally overpredicted damage in the lattice when compared to the physical results seen in prior work.
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<br>Subjects: gallium nitride; aluminum gallium nitride; high electron mobility transistor; electronics; 2 MeV proton irradiation; radiation effects</div>
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Augustine, Robert T.</div>
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