data_InSiTc2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   5.13
_cell_length_b   5.13
_cell_length_c   2.9
_cell_angle_alpha   104.13
_cell_angle_beta   104.13
_cell_angle_gamma   111.3
_symmetry_Int_Tables_number   1
_chemical_formula_structural   InSiTc2
_chemical_formula_sum   'In1 Si1 Tc2'
_cell_volume   64.11
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.89  0.0  0.0  1.0
  Si  Si1  1  0.0  0.0  0.0  1.0
  Tc  Tc2  1  0.82  0.12  0.31  1.0
  Tc  Tc3  1  0.82  0.88  0.31  1.0

data_InSiTc2
_symmetry_space_group_name_H-M   P1
_cell_length_a   2.9
_cell_length_b   5.13
_cell_length_c   5.13
_cell_angle_alpha   111.3
_cell_angle_beta   104.13
_cell_angle_gamma   104.13
_symmetry_Int_Tables_number   1
_chemical_formula_structural   InSiTc2
_chemical_formula_sum   'In1 Si1 Tc2'
_cell_volume   64.11
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  In  In0  1  0.0  0.89  0.0  1.0
  Si  Si1  1  0.0  0.0  0.0  1.0
  Tc  Tc2  1  0.31  0.82  0.88  1.0
  Tc  Tc3  1  0.31  0.82  0.12  1.0

In Si Tc Tc
In Si Tc Tc 0 1 + o o 0 2 o o o 0 3 o - o 2 3 o - o 
Tc2InSi crystallizes in the triclinic P1 space group. The structure is zero-dimensional and consists of one Tc2InSi cluster. There are two inequivalent Tc sites. In the first Tc site, Tc(1) is bonded in a 2-coordinate geometry to one Tc(2) and one In(1) atom. The Tc(1)-Tc(2) bond length is 1.20 Å. The Tc(1)-In(1) bond length is 1.17 Å. In the second Tc site, Tc(2) is bonded in a 2-coordinate geometry to one Tc(1) and one In(1) atom. The Tc(2)-In(1) bond length is 1.25 Å. In(1) is bonded in a distorted single-bond geometry to one Tc(1), one Tc(2), and one Si(1) atom. The In(1)-Si(1) bond length is 0.55 Å. Si(1) is bonded in a single-bond geometry to one In(1) atom.