data_GaSiAs2
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.0
_cell_length_b   3.0
_cell_length_c   8.91
_cell_angle_alpha   90.0
_cell_angle_beta   90.0
_cell_angle_gamma   108.0
_symmetry_Int_Tables_number   1
_chemical_formula_structural   GaSiAs2
_chemical_formula_sum   'Ga1 Si1 As2'
_cell_volume   76.35
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga2  1  0.76  0.0  0.34  1.0
  Si  Si3  1  0.0  0.0  0.25  1.0
  As  As0  1  0.76  0.0  0.42  1.0
  As  As1  1  0.0  0.0  0.35  1.0

data_GaSiAs2
_symmetry_space_group_name_H-M   P1
_cell_length_a   3.0
_cell_length_b   3.0
_cell_length_c   8.91
_cell_angle_alpha   90.0
_cell_angle_beta   90.0
_cell_angle_gamma   108.0
_symmetry_Int_Tables_number   1
_chemical_formula_structural   GaSiAs2
_chemical_formula_sum   'Ga1 Si1 As2'
_cell_volume   76.35
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.76  0.0  0.34  1.0
  Si  Si1  1  0.0  0.0  0.25  1.0
  As  As2  1  0.0  0.0  0.35  1.0
  As  As3  1  0.76  0.0  0.42  1.0

Ga Si As As
GaSiAs2 crystallizes in the triclinic P1 space group. The structure is zero-dimensional and consists of one GaSiAs2 cluster. Ga(1) is bonded in an L-shaped geometry to one As(1) and one As(2) atom. The Ga(1)-As(1) bond length is 0.64 Å. The Ga(1)-As(2) bond length is 0.71 Å. Si(1) is bonded in a distorted single-bond geometry to one As(2) atom. The Si(1)-As(2) bond length is 0.89 Å. There are two inequivalent As sites. In the first As site, As(1) is bonded in a single-bond geometry to one Ga(1) atom. In the second As site, As(2) is bonded in a distorted L-shaped geometry to one Ga(1) and one Si(1) atom.