data_SiTe2W
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   3.41
_cell_length_b   4.58
_cell_length_c   5.3
_cell_angle_alpha   90.0
_cell_angle_beta   90.0
_cell_angle_gamma   90.0
_symmetry_Int_Tables_number   1
_chemical_formula_structural   SiTe2W
_chemical_formula_sum   'Si1 Te2 W1'
_cell_volume   83.01
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.0  0.0  0.0  1.0
  Te  Te1  1  0.0  0.29  0.65  1.0
  Te  Te2  1  0.71  0.29  0.0  1.0
  W  W3  1  0.71  0.0  0.65  1.0

data_SiTe2W
_symmetry_space_group_name_H-M   P1
_cell_length_a   3.41
_cell_length_b   4.58
_cell_length_c   5.3
_cell_angle_alpha   90.0
_cell_angle_beta   90.0
_cell_angle_gamma   90.0
_symmetry_Int_Tables_number   1
_chemical_formula_structural   SiTe2W
_chemical_formula_sum   'Si1 Te2 W1'
_cell_volume   83.01
_cell_formula_units_Z   1
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Si  Si0  1  0.0  0.0  0.0  1.0
  Te  Te1  1  0.0  0.29  0.65  1.0
  Te  Te2  1  0.71  0.29  0.0  1.0
  W  W3  1  0.71  0.0  0.65  1.0

Si Te Te W
WSiTe2 is Indium-like structured and crystallizes in the triclinic P1 space group. The structure is zero-dimensional and consists of one WSiTe2 cluster. W(1) is bonded in a 2-coordinate geometry to one Si(1) and one Te(1) atom. The W(1)-Si(1) bond length is 2.10 Å. The W(1)-Te(1) bond length is 1.67 Å. Si(1) is bonded in a 2-coordinate geometry to one W(1) and one Te(2) atom. The Si(1)-Te(2) bond length is 1.67 Å. There are two inequivalent Te sites. In the first Te site, Te(1) is bonded in a distorted single-bond geometry to one W(1) atom. In the second Te site, Te(2) is bonded in a distorted single-bond geometry to one Si(1) atom.