data_Ga5Si4
_symmetry_space_group_name_H-M   'P 1'
_cell_length_a   8.02
_cell_length_b   8.02
_cell_length_c   5.56
_cell_angle_alpha   90.0
_cell_angle_beta   90.0
_cell_angle_gamma   120.0
_symmetry_Int_Tables_number   1
_chemical_formula_structural   Ga5Si4
_chemical_formula_sum   'Ga10 Si8'
_cell_volume   309.89
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  0.85  0.93  0.17  1.0
  Ga  Ga1  1  0.33  0.0  0.17  1.0
  Ga  Ga2  1  0.84  0.02  0.17  1.0
  Ga  Ga3  1  0.16  0.02  0.39  1.0
  Ga  Ga4  1  0.69  0.0  0.39  1.0
  Ga  Ga5  1  0.15  0.93  0.39  1.0
  Ga  Ga6  1  0.0  0.63  0.78  1.0
  Ga  Ga7  1  0.01  0.32  0.0  1.0
  Ga  Ga8  1  0.01  0.32  0.78  1.0
  Ga  Ga9  1  0.0  0.63  0.0  1.0
  Si  Si10  1  0.0  0.0  0.78  1.0
  Si  Si11  1  0.0  0.0  0.0  1.0
  Si  Si12  1  0.53  0.65  0.17  1.0
  Si  Si13  1  0.97  0.0  0.17  1.0
  Si  Si14  1  0.52  0.3  0.17  1.0
  Si  Si15  1  0.48  0.3  0.39  1.0
  Si  Si16  1  0.05  0.0  0.39  1.0
  Si  Si17  1  0.47  0.65  0.39  1.0

data_Ga5Si4
_symmetry_space_group_name_H-M   P1
_cell_length_a   5.56
_cell_length_b   8.02
_cell_length_c   8.02
_cell_angle_alpha   120.0
_cell_angle_beta   90.0
_cell_angle_gamma   90.0
_symmetry_Int_Tables_number   1
_chemical_formula_structural   Ga5Si4
_chemical_formula_sum   'Ga10 Si8'
_cell_volume   309.89
_cell_formula_units_Z   2
loop_
 _symmetry_equiv_pos_site_id
 _symmetry_equiv_pos_as_xyz
  1  'x, y, z'
loop_
 _atom_site_type_symbol
 _atom_site_label
 _atom_site_symmetry_multiplicity
 _atom_site_fract_x
 _atom_site_fract_y
 _atom_site_fract_z
 _atom_site_occupancy
  Ga  Ga0  1  -0.0  0.01  0.32  1.0
  Ga  Ga1  1  -0.0  -0.0  0.63  1.0
  Ga  Ga2  1  0.17  0.33  0.0  1.0
  Ga  Ga3  1  0.17  0.84  0.02  1.0
  Ga  Ga4  1  0.17  0.85  0.93  1.0
  Ga  Ga5  1  0.39  0.15  0.93  1.0
  Ga  Ga6  1  0.39  0.16  0.02  1.0
  Ga  Ga7  1  0.39  0.69  0.0  1.0
  Ga  Ga8  1  0.78  -0.0  0.63  1.0
  Ga  Ga9  1  0.78  0.01  0.32  1.0
  Si  Si10  1  0.0  0.0  0.0  1.0
  Si  Si11  1  0.17  0.52  0.3  1.0
  Si  Si12  1  0.17  0.53  0.65  1.0
  Si  Si13  1  0.17  0.97  0.0  1.0
  Si  Si14  1  0.39  0.05  0.0  1.0
  Si  Si15  1  0.39  0.47  0.65  1.0
  Si  Si16  1  0.39  0.48  0.3  1.0
  Si  Si17  1  0.78  0.0  0.0  1.0

Ga Ga Ga Ga Ga Ga Ga Ga Ga Ga Si Si Si Si Si Si Si Si
Ga7Si5(SiGa)3 is Indium-like structured and crystallizes in the triclinic P1 space group. The structure is zero-dimensional and consists of one Ga7Si5 cluster and one SiGa cluster. In the Ga7Si5 cluster, there are seven inequivalent Ga sites. In the first Ga site, Ga(1) is bonded in a distorted L-shaped geometry to one Ga(3) and one Si(4) atom. The Ga(1)-Ga(3) bond length is 0.74 Å. The Ga(1)-Si(4) bond length is 0.84 Å. In the second Ga site, Ga(3) is bonded in a 1-coordinate geometry to one Ga(1) and one Ga(5) atom. The Ga(3)-Ga(5) bond length is 1.63 Å. In the third Ga site, Ga(5) is bonded in a distorted water-like geometry to one Ga(3) and one Si(8) atom. The Ga(5)-Si(8) bond length is 2.49 Å. In the fourth Ga site, Ga(7) is bonded in a single-bond geometry to one Ga(10) and one Ga(9) atom. The Ga(7)-Ga(10) bond length is 1.22 Å. The Ga(7)-Ga(9) bond length is 2.58 Å. In the fifth Ga site, Ga(8) is bonded in a distorted single-bond geometry to one Ga(9) atom. The Ga(8)-Ga(9) bond length is 1.22 Å. In the sixth Ga site, Ga(9) is bonded in a 3-coordinate geometry to one Ga(7), one Ga(8), and one Si(1) atom. The Ga(9)-Si(1) bond length is 2.49 Å. In the seventh Ga site, Ga(10) is bonded in a distorted single-bond geometry to one Ga(7) atom. There are five inequivalent Si sites. In the first Si site, Si(1) is bonded in a distorted single-bond geometry to one Ga(9) and one Si(2) atom. The Si(1)-Si(2) bond length is 1.22 Å. In the second Si site, Si(2) is bonded in a 2-coordinate geometry to one Si(1) and one Si(4) atom. The Si(2)-Si(4) bond length is 0.98 Å. In the third Si site, Si(3) is bonded in a 1-coordinate geometry to one Si(8) atom. The Si(3)-Si(8) bond length is 1.30 Å. In the fourth Si site, Si(4) is bonded in a 1-coordinate geometry to one Ga(1) and one Si(2) atom. In the fifth Si site, Si(8) is bonded in a distorted single-bond geometry to one Ga(5) and one Si(3) atom. In the SiGa cluster, there are three inequivalent Ga sites. In the first Ga site, Ga(2) is bonded in a 2-coordinate geometry to one Ga(6) and one Si(5) atom. The Ga(2)-Ga(6) bond length is 1.73 Å. The Ga(2)-Si(5) bond length is 2.12 Å. In the second Ga site, Ga(4) is bonded in a water-like geometry to one Ga(6) and one Si(7) atom. The Ga(4)-Ga(6) bond length is 0.65 Å. The Ga(4)-Si(7) bond length is 0.82 Å. In the third Ga site, Ga(6) is bonded in a single-bond geometry to one Ga(2) and one Ga(4) atom. There are three inequivalent Si sites. In the first Si site, Si(5) is bonded in a distorted L-shaped geometry to one Ga(2) and one Si(6) atom. The Si(5)-Si(6) bond length is 1.25 Å. In the second Si site, Si(6) is bonded in a 1-coordinate geometry to one Si(5) atom. In the third Si site, Si(7) is bonded in a distorted single-bond geometry to one Ga(4) atom.