FETs are divided into two families: junction FET (JFET) and insulated gate FET (IGFET). The IGFET is more commonly known as a metal–oxide–semiconductor FET (MOSFET), reflecting its original construction from layers of metal (the gate), oxide (the insulation), and semiconductor. Unlike IGFETs, the JFET gate forms a p–n diode with the channel which lies between the source and drain. Functionally, this makes the n-channel JFET the solid-state equivalent of the vacuum tube triode which, similarly, forms a diode between its grid and cathode. Also, both devices operate in the depletion mode, they both have a high input impedance, and they both conduct current under the control of an input voltage.
FETs are divided into two families : junction FET ( JFET ) and insulated gate FET ( IGFET ) . The IGFET is more commonly known as a metal – oxide – semiconductor FET ( MOSFET ) , reflecting its original construction from layers of metal ( the gate ) , oxide ( the insulation ) , and semiconductor . Unlike IGFETs , the JFET gate forms a p – n diode with the channel which lies between the source and drain . Functionally , this makes the n - channel JFET the solid - state equivalent of the vacuum tube triode which , similarly , forms a diode between its grid and cathode . Also , both devices operate in the depletion mode , they both have a high input impedance , and they both conduct current under the control of an input voltage .
How is a JFET different from an IGFET?
How is a JFET different from an IGFET ?
the JFET gate forms a p–n diode with the channel
the JFET gate forms a p–n diode with the channel