A new style of wafers composed of gallium-nitride-on-silicon (GaN-on-Si) is being used to produce white LEDs using 200-mm silicon wafers. This avoids the typical costly sapphire substrate in relatively small 100- or 150-mm wafer sizes. The sapphire apparatus must be coupled with a mirror-like collector to reflect light that would otherwise be wasted. It is predicted that by 2020, 40% of all GaN LEDs will be made with GaN-on-Si. Manufacturing large sapphire material is difficult, while large silicon material is cheaper and more abundant. LED companies shifting from using sapphire to silicon should be a minimal investment.
A new style of wafers composed of gallium - nitride - on - silicon ( GaN - on - Si ) is being used to produce white LEDs using 200-mm silicon wafers . This avoids the typical costly sapphire substrate in relatively small 100- or 150-mm wafer sizes . The sapphire apparatus must be coupled with a mirror - like collector to reflect light that would otherwise be wasted . It is predicted that by 2020 , 40 % of all GaN LEDs will be made with GaN - on - Si . Manufacturing large sapphire material is difficult , while large silicon material is cheaper and more abundant . LED companies shifting from using sapphire to silicon should be a minimal investment .
What is being used to produce white LEDs?
What is being used to produce white LEDs ?
wafers composed of gallium-nitride-on-silicon
wafers composed of gallium-nitride-on-silicon