\section{Device Fabrication and Geometry}

A QPC is formed when a narrow constriction in a two-dimensional device restricts the number of quantized channels through which electrons can flow. In the quantum Hall regime, when the constriction is on the order of the magnetic length $\ell_B$, the transmission of chiral edge modes through the QPC varies sensitively with the width. The typical approach to create a QPC in III-V semiconductor quantum wells is to use electron beam lithography techniques to evaporate metal split-gates, separated by 1$\mu$m or less, and dope the 2DEG under the split gates into the intrinsic band-gap, forming a narrow constriction between the depleted regions\cite{van_wees_quantized_1988}.  This approach is precluded in monolayer graphene by the absence of a band gap; however, at finite magnetic field, Coulomb interactions generate a gap at charge neutrality allowing electrostatic definition of QPCs in the quantum Hall regime by interfacing quantum Hall states with regions of filling factor $\nu = 0$.

\par Due to the high quality of all-van der Waals heterostructures \cite{zibrov_even-denominator_2018,li_even_2017,dean_fractional_2020}, it is desirable to create QPCs where all regions bordering the junction are dual-graphite gated.  To accomplish this, we first use an atomic force microscope (AFM) to locally oxidize\cite{masubuchi_fabrication_2009,li_electrode-free_2018} a cross-shaped geometry into a graphite flake (see Fig.~\ref{fig:fab_geometry}a).  In this process, a conductive AFM tip is brought close to a graphite surface in a humid environment.  Capillary forces form a nano-scale water meniscus \cite{butt_using_2006} connecting the tip and graphite surface.  When a high frequency excitation is applied to the tip, the voltage drop across the water meniscus catalyzes oxidation of the graphite into gaseous byproducts.  Scanning the tip across the graphite surface while this reaction occurs allows nano-scale subtractive lithography\cite{li_electrode-free_2018} in an entirely resist-free process.

\par Using this technique, 60-70~nm  line-widths can be achieved (Fig.~ \ref{fig:fab_geometry}b). The patterned graphite gate can then be integrated into a heterostructure (Fig.~\ref{fig:fab_geometry}c) and deposited on the final substrate (see Methods). 
Etch byproducts are visible in the as-cut graphite. However, imaging the etched graphite after it is adhered to an hBN flake during the assembly process shows that this residue is not transferred (Fig.~\ref{fig:fab_geometry}d). An optical micrograph of a device following additional standard lithographic processing (see Methods) is shown in Fig.~\ref{fig:fab_geometry}e; the final device features four isolated gates we denote North (N), South (S), East (E) and West (W) which control transport through the QPC. 
Notably, prepatterning the graphite means the areas closest to the QPC are not exposed to any fabrication residues, in contrast to graphite gates patterned by plasma-etching\cite{ronen_aharonov-bohm_2021}.
The high sample quality resulting from this procedure is visible in Fig.~\ref{fig:fab_geometry}f, which shows four-terminal longitudinal and Hall conductance measured in the W quadrant.  


\section{Quantum point contacts in the quantum Hall regime}

To characterize the operation of our QPC we measure the four-terminal `diagonal conductance,' $G_D$, which in the integer quantum Hall (IQH) regime gives a direct measure of the number of edge modes $N_{qpc}$ transmitted across the device such that $G_D = N_{qpc} e^2/h$\cite{datta_electronic_1995, zimmermann_tunable_2017}.
We use transport contacts in pairs to decrease the contact resistance and improve edge-state equilibration, exciting an AC voltage on contacts C3/C4, and the measuring the current $I_{out}$ on contacts C5/C6. The diagonal voltage drop, $V_D$, is measured between C1/C2 and  C7/C8.  We then define $G_D \equiv I_{out} / V_D$.

Fig.~\ref{fig:integer_qpc}a shows a map of the $G_D$ at B=6~T and T=300~mK as we vary the $V_{NS}\equiv V_N = V_S$ and $V_{EW} \equiv V_E = V_W$.  
As expected for IQH transport, the conductance maps in Fig.~~\ref{fig:integer_qpc}a-c are dominated by regions of fixed conductance at integer multiples of $e^2/h$, corresponding to transmission of an integer number of chiral edge states across the device.  For each conductance map in Fig.~~\ref{fig:integer_qpc}a-c, the graphite bottom gate, $V_B$, is fixed to a different voltage.  Using the capacitive lever arm $\alpha\equiv C_B/C_T=1.773$ (see Fig.~\ref{fig:supp_determining_alpha}), the ranges of $V_{EW}$ and $V_{NS}$ are chosen such that the electronic density in each region of the monolayer is kept in the same range in all three panels. The precise mapping of gate voltages to $\nu$ is determined by measuring the Hall effect in the W quadrant (see Fig.~\ref{fig:filling_factor_maps}).  

Tracing the behavior of the transitions between conductance plateaus reveals two distinct regimes.  In the first, plateau transitions are controlled by only $V_{EW}$ \textit{or} $V_{NS}$, producing steps in $G_D$ along either horizontal or vertical lines in the $(V_{NS} , V_{EW})$ plane.  In this regime, the diagonal conductance is primarily determined by the number of edge states transmitted along the physical edge of the device, far from the QPC.  For example at point I in Fig.~~\ref{fig:integer_qpc}a, the filling factor of the north and south regions, $\nu_{NS} = \nu_N = \nu_S$, is fixed to $\nu_{NS} = 0$, while the E/W regions are fixed to $\nu_{EW} = \nu_E = \nu_W = -4$.  Point I sits to the right of a \textit{vertical} transition, solely controlled by $V_{NS}$, where $G_D$ goes from 0 to 1.  
Decreasing $V_{NS}$ starting at point I changes the filling $\nu_{NS}$ from 0 to -1, adding an edge mode in the N/S regions at the physical device boundary and increasing $G_D$.  

In the second regime, the plateau transitions are influenced by \textit{both} $V_{EW}$ and $V_{NS}$, producing a step in $G_D$ along lines of slope $\approx -1$ in the $(V_{NS},V_{EW})$ plane.  This behavior is expected when edge modes are transmitted through the center of the QPC, where they are equally sensitive to the fringe electric fields of each of the N/S/E/W gates.  Consider again point I which sits just above a \textit{diagonal} transition, where $G_D$ goes from 0 to 1.  Near the transition, $\nu_{NS} = 0$ and no conduction can occur along the etched boundary -- all current must be carried via edge modes through the QPC.  However, at the transition, $G_D$ may change sharply by \textit{either} an equal perturbation in $V_{NS}$ or $V_{EW}$ while maintaining $\nu_{NS} = 0$.  The existence of such transitions in $G_D$ implies the filling factor in the QPC center can be held fixed via equal and opposite modulations of $V_{NS}$ and $V_{EW}$: lines separating differing values of $G_D$ which are parallel to $V_{NS} + V_{EW} = 0$ demarcate sharp boundaries between regions of different filling factor in the center of the QPC itself.   
\par The \textit{diagonal} steps in $G_D$  shift as a function of $V_B$ (Figs.  \ref{fig:integer_qpc}b-c), in contrast to the horizontal and vertical transitions in $G_D$ whose locations are unaffected. This behavior follows from the device electrostatics: Near the device boundary, transport is determined directly by the bulk filling factor in the N/S/E/W regions.  Since the graphite bottom gate uniformly modulates the density of the whole monolayer, the role of $V_B$ is merely to induce a chemical potential shift in the whole device which is compensated by offsetting the applied gate voltages.  This is not true in the central region, however, which is doped by the fringe fields of N/S/E/W gates.

It follows that tuning the bottom gate while keeping the densities in the N, S, E, and W constant changes the electrostatics of the QPC. 
Points I-III in Figs. \ref{fig:integer_qpc}a-c correspond to identical carrier densities away from the QPC, with $\nu_{EW} = -4$ and $\nu_{NS} = 0$. 
At point I, all the edge modes are pinched off and $G_D = 0$. As $V_B$ is decreased, the filling factor in the QPC changes, leading to the transmission of one additional edge modes at point II and and two additional modes at point III.  
Fig.~\ref{fig:integer_qpc}d shows the continuous evolution between points I, II, and III as a function of $V_{EW} - V_B$, corresponding to tuning the QPC electrostatics. A schematic depiction of the corresponding filling factor maps in real space are shown in Figs. \ref{fig:integer_qpc}e-g, with additional discussion provided in the supplementary information.

To explore QPC operation in the fractional quantum Hall (FQH) regime, edge state transmission must be controlled while maintaining $\nu_{EW}$ at a fixed, fractional filling.  To ensure the absence of edge states in the N/S regions, the N/S gates must also be adjusted to maintain $\nu_{NS}=0$ for a given bottom gate voltage.  Fortunately, the $\nu=0$ gap has a finite width in gate voltage due to the large quantum capacitance, allowing us to modulate the shape of the QPC potential using the N/S gates while maintaining $\nu_{NS} = 0$.

\begin{figure}
    \includegraphics[width = 90mm]{fig3.pdf}
    \caption{
    \textbf{Selective partitioning of fractional quantum Hall edge modes.} 
    \textbf{(a)} $G_D$ map at fixed $\nu_{EW} = -\frac{5}{3}$.  To achieve this, both $V_{EW}$ and $V_B$ are varied along the y-axis, keeping $\nu_{EW}$ constant but varying $(V_B-V_{EW})$.  
    The x-axis range corresponds to the full width of the $\nu=0$ plateau. 
    \textbf{(b)} $G_D$ along the dashed white contour in panel c.  Two fractional plateaus are highlighted, at $4/3$ and $5/3$. 
    \textbf{(c)} $G_D$ map with contstant $\nu_{EW}=-1$. 
    \textbf{(d)} $G_D$ along the dashed white contour in panel c.  Two $G_D$ plateaus at $1/3$ and $2/3$ are highlighted. 
    }
    \label{fig:fractional_qpc}
\end{figure}

\begin{figure*}[t!]
    \centering
    \includegraphics[width = 180mm]{fig4.pdf}
    \caption{\textbf{Coulomb blockade at a gate-induced saddle point.} 
    \textbf{(a)} $G_D$ at $V_B = -0.25$~V and B=13~T spanning zero to full transmission of a single IQH edge mode. 
    Inset: simulated potential across the N-W boundary at the points marked I and II. 
    $E_V/E_C\approx 0.4, 1.8$ for I and II respectively. 
    \textbf{(b)} Two-terminal differential conductance $\dif I/ \dif V_{SD}$ measured across the QPC. Data are plotted as a function of $V_{SD}$ along the white contour in panel a, parameterized by $\Delta V = V_{NS} - V_{EW}$.
    Diamond-shaped conductance peaks are indicative of Coulomb blockade, consistent with resonant transmission of edge modes through a localized state at the center of the QPC, as depicted in the inset. 
    \textbf{(c)} $\dif I/ \dif V_{SD}$ along the black contour in panel a.  Resonant reflection is observed, consistent with backscattering of edge state through the localized state, depicted in the inset. 
    \textbf{(d)} Zero-bias traces of (b) and (c) illustrate that the resonant transmission and resonant reflection regimes evolve from fractional plateaus at 1/3 and 2/3 respectively as $\Delta V = V_{NS} - V_{EW}$ is increased.}
    \label{fig:dot_antidot}
\end{figure*}

Figs. \ref{fig:fractional_qpc}a-b show maps of $G_D$, measured for $\nu_{EW} = -5/3$ at B=13T and T=300mK.  We observe two distinct fractionally-quantized plateaus at $G_D = 4/3$ and $5/3$ above the integer plateau at $G_D = 1$. The existence of \textit{two} fractional conductance steps in the $\nu=-5/3$ state implies that the edge hosts two modes with conductance $\frac{1}{3} e^2/h$, and is not expected from conventional models of the edge structure for a sharp confinement potential\cite{johnson_composite_1991, kane_randomness_1994}. However, since the QPC is entirely gate-defined, the moderate slope of the confinement potential allows for reconstruction of the edge states under the influence of Coulomb interactions.  Edge reconstruction is controlled by the ratio of the ``confinement energy'', $E_V = e\frac{\partial \phi_{ext}}{\partial x}\ell_B$ (here $\phi_{ext}$ is taken to be potential perpendicular to a confining edge), and the Coulomb energy $E_C = \frac{e^2}{4\pi \epsilon\ell_B}$.  Theoretically\cite{chamon_sharp_1994}, an edge phase transition occurs between the sharp-edge regime ($E_V \gg E_C$) and the soft-edge regime at ($E_V \sim E_C$).  In the soft-edge regime, interactions favor the formation of a non-monotonic density at the boundary, introducing an additional edge mode for the hole-conjugate Laughlin states at $|\nu| = n + 2/3$\cite{meir_composite_1994} as confirmed by experiments in GaAs\cite{sabo_edge_2017}.  For our device operating in the regime corresponding to Fig.~\ref{fig:fractional_qpc}, we estimate $\frac{\partial \phi_{ext}}{\partial x} \approx 10$ mV/nm, giving $E_V \approx 70$ meV.  This is comparable to the Coulomb energy, $E_C \sim 40$ meV at B=13T, suggesting that reconstruction effects are energetically allowed.

Unexpectedly, the $G_D$ map taken at $\nu_{EW} = -1$ also shows the emergence of intermediate plateaus between $G_D = 0$ and $G_D = 1$ (Fig.~\ref{fig:fractional_qpc}c). The clearest of these occur at $G_D = 1/3$ and $2/3$, highlighted in \ref{fig:fractional_qpc}d.  This effect can be observed at fields as low as 3.5T (see Fig.~\ref{fig:supp_3p5T_fqh_reconstruction}).  The presence of fractional conductance plateaus within an IQH state is further evidence that edge reconstruction is relevant.  Indeed, recent theoretical work\cite{khanna_fractional_2021} has argued that reconstruction can introduce FQH modes even at the edge of an IQH bulk by favoring the spontaneous formation of a side-strip of FQH fluid. This is supported by a recent Mach-Zehnder edge-state interferometry experiment in GaAs \cite{bhattacharyya_melting_2019}, where an intermediate 1/3 plateau was observed in the QPC transmission of a bulk $\nu = 1$ state. In contrast to this experiment, we also find a plateau at 2/3, suggestive of the formation of an additional incompressible strip of $\nu = 2/3$ filling at the gate-defined edge. 

\section{Spontaneous Localization from Edge Reconstruction}

Further evidence for Coulomb-induced reconstruction of the electronic density within the QPC is evident in Fig.~\ref{fig:dot_antidot}a, which shows $G_D$ measured over a large range of $V_{NS}$ and $V_{EW}$ at B=13T.  The plot is centered around the transition between $G_D=0$ and $G_D=1$, and shows a rich texture of conductance peaks and dips emerging from fractional intermediate plateaus at $G_D= \tfrac{1}{3} e^2/h$ and $ \frac{2}{3}  e^2/h$ in the upper left corner of the plot. Similar features which exhibit identical structure to each other are observed on other conductance steps (see Fig.~\ref{fig:supp_repeated_resonances}).  Figs. \ref{fig:dot_antidot}b and c show the two terminal differential conductance across the quantum point contact, $\dif I/ \dif V_{SD}$, plotted as a function of the source-drain voltage $V_{SD}$ with the potential difference $\Delta V = V_{NS} - V_{EW}$ tuned to follow the contours indicated by dashed white and black arrows, respectively, in Fig.~ \ref{fig:dot_antidot}a. 

Along the white contour in Fig.~\ref{fig:dot_antidot}a the junction is nearly pinched off, with conductance dropping to zero between the peaks.  Nonlinear conductance in this regime shows diamond-shaped structure typical of transport across a Coulomb blockaded quantum dot, with charging energies as large as 1 meV.  This is consistent with a scenario where resonant transmission through the dot allows charge transport between two otherwise fully-reflected edge states in the E and W regions, as illustrated schematically in the inset to Fig.~\ref{fig:dot_antidot}b.

Along the black contour in Fig.~\ref{fig:dot_antidot}a, nonlinear conductance shows an almost identically-shaped diamond structure, this time with the on-resonance condition corresponding to a decrease in conductance (Fig.~\ref{fig:dot_antidot}c). This is again consistent with a a Coulomb blockaded quantum dot in the QPC, but one whose primary effect on transport is to allow backscattering between two otherwise fully-transmitted edge states (see Fig.~\ref{fig:dot_antidot}c, inset).

The existence of a quantum dot is not na\"ively expected in a quantum point contact where the unscreened electrostatic potential is described by a saddle point.  A natural possibility is that a stray disorder potential localizes charge near the nominal saddle point.  This hypothesis can be rejected for several reasons.  First, nearly identical resonant structure is observed when the sign of all applied gate voltages is reversed (see Fig.~\ref{fig:supp_ph_symmetry} and Fig.~\ref{fig:supp_saddle_point_dot}).  This rules out local disorder in the QPC of a fixed sign, as such disorder would induce a confining potential in one case but not the other.

\begin{figure}
    \includegraphics[width = 90mm]{fig5.pdf}
    \caption{\textbf{Quantum dot position and polarizability.} 
    \textbf{(a)} $\dif I/\dif V_{SD}$ at $V_{SD}=0$ across several Coulomb blockade peaks, plotted as a function of $V_N$ and $V_S$ with other voltages held constant.  Near $V_N=V_S$, $\dif V_S/\dif V_N\approx-1$ indicating that the dot is equidistant from the N and S gates.  The peak follows a contour of positive curvature, indicating the dot is repelled by positive $V_N$ or $V_S$.   
    \textbf{(b)} The same, but plotted in the $(V_W,V_E)$ plane. Again, $\dif V_E/\dif V_W\approx-1$ indicates that the dot is equidistant from the E and W gates.  The curvature is negative, opposite to that in the $(V_N,V_S)$ plane, consistent with a dot trapped at a saddle point.}
    \label{fig:dot_polarizability}
\end{figure}

In addition, we can use the four-quadrant gate geometry to determine both the position of the localized charge and its polarizability within the 2D plane.  
Fig.~\ref{fig:dot_polarizability}a shows a representative Coulomb blockade peak as function of $V_N$ and $V_S$, while keeping all other gates constant. 
The Coulomb peaks will follow the condition $C_N  \mathrm{d} V_N + C_S \mathrm{d} V_S  = 0$, where $C_N$ and $C_S$ are the capacitances to the N and S gates, respectively. The ratio of these capacitances may be inferred from the slope of the Coulomb peak trajectory in the $(V_N,V_S)$ plane,  $\frac{ \mathrm{d} V_S}{ \mathrm{d} V_N} = - \frac{C_N}{C_S}$. 
When $V_N = V_S$, $C_N/C_S\approx1$, implying that the dot is equidistant from the two gates. 
The curvature of the peak trajectory, meanwhile, reveals how the capacitances are changed by the motion of the dot.  Evaluating at $C_N = C_S$, we have $\frac{ \mathrm{d}^2 V_S}{ \mathrm{d} V^2_N} = - \frac{1}{C_S} ( \frac{\dif C_N}{\dif V_N} - \frac{\dif C_S}{\dif V_N})$. The curvature is observed to be positive, and hence $\frac{\dif C_N}{\dif V_N} < \frac{\dif C_S}{\dif V_N}$. Since $C_{N/S}$ is inversely proportional to the distance between the gate and dot, this implies that a positive bias on $V_{N}$ repels the dot from the $N$ gate. This behavior is consistent with a dot trapped at an electrostatic \textit{minimum} in the N/S direction. 

Analogous measurements as a function of $V_E$ and $V_W$ are shown in Fig.~\ref{fig:dot_polarizability}b.  Again, for $V_E = V_W$, $C_E/C_W\approx 1$, indicating the dot is equidistant from the E and W gates.  However, the curvature of the peak trajectories in Fig.~\ref{fig:dot_polarizability}b are opposite in sign from those in Fig.~\ref{fig:dot_polarizability}a.  This behavior is consistent with a particle trapped in an electrostatic \textit{maximum} along the E/W direction. 

Taken together, these measurements show that the quantum dot is centered at an electrostatic saddle point (see Fig.~ \ref{fig:supp_saddle_point_dot} for analogous data near a simple conductance step).  This is puzzling, however, as the presence of intrinsic Coulomb blockade would seem to require a stable extremum of the potential, and a saddle point potential does not support any long-lived localized states, even in a magnetic field \cite{hegde_quasinormal_2019, floser_transmission_2010}. 

The observed localization can be accounted for by considering the same Coulomb-induced edge reconstruction responsible for fractional plateaus in Fig.~\ref{fig:fractional_qpc}d.  Generally, edge state reconstruction may lead to non-monotonic density profiles along a smooth potential step \cite{chamon_sharp_1994,khanna_fractional_2021}. Along the translation-invariant electrostatic edge between two quantum Hall phases, the resulting electronic density retains the spatial symmetry of the underlying potential, resulting in formation of a series of strips at the boundary between the two phases. In a more complex geometry such as the QPC potential studied here, the same mechanism can favor the formation of more complicated structures that still maintain the 180$^\circ$-rotation symmetry of the underlying potential, such as an isolated dot of nonzero density at the center of the QPC.

To evaluate the plausibility of a reconstruction-induced quantum dot we use a self-consistent Thomas-Fermi model to calculate the reconstructed density within the QPC.  Our  calculations account for the nontrivial density dependence of the chemical potential \cite{yang_experimental_2021} within a partially-filled LL, as well as the realistic device geometry (see methods and supplementary information for a detailed description of the numerical simulations). 
Fig.~\ref{fig:TF_reconstruction}a-b shows the calculated density for $\nu_{EW} = 1$ and $\nu_{NS} = 0$. 
For the softest potential, in panel a, an intermediate side-strip of fractional filling $\nu = 1/3$ is observed at each boundary between $\nu = 0$ and $\nu = 1$. As $E_V/E_C$  increases,  reconstruction  becomes less favorable, and an isolated island of filling factor $\nu=1/3$ spontaneously forms in the center of the junction. Crucially, this island is isolated from the surrounding regions of non-zero density by depletion regions, which may form tunnel barriers between the dot and the reservoirs on either side. 

Both regimes of reconstruction correspond directly to observations in Fig.~\ref{fig:dot_antidot}.  At point I along the dashed white line, where $\Delta V = V_{NS} - V_{EW} = 1 V$ and the applied potential is thus the softest, we observe fractionally-quantized conductance, $G_D = 1/3$, corresponding to transmission of a single fractional edge mode, in agreement with Fig.~\ref{fig:TF_reconstruction}a.  As $\Delta V$ is increased, (starting half-way between I and II where $\Delta V \sim 2.5V$) Coulomb peaks appear corresponding to the existence of a quantum dot as in Fig.~\ref{fig:TF_reconstruction}b.  Our simulations suggest that the quantum dot is composed of an island at fractional filling, raising the possibility that few or single fractionally charged quasiparticles in this platform can be readily localized even with a geometry which, in the absence of Coulomb interactions, forbids trapping single particles.  Additionally, in light of our simulations the highly symmetric nature of the resonant reflected features observed in Fig.~\ref{fig:dot_antidot}a may likely be interpreted as the particle-hole conjugate to the scenario presented in Fig.~\ref{fig:TF_reconstruction}. While our experiment at present cannot test these hypotheses, future experiments, for example measuring the shot noise across the QPC, may give direct evidence for the trapping of fractional quasiparticles in the dot.  

\begin{figure}[t]
    \centering
    \includegraphics[width = 90mm]{fig6_v2.pdf}
    \caption{
    \textbf{Thomas-Fermi calculation of the reconstructed carrier density.} 
    \textbf{(a)} Calculated filling factor $\nu$ for a realistic device geometry at $B = 13T$ for $E_V/E_C = 0.44$.  The continuous strip of $\nu=\tfrac13$ filling corresponds to transmission of a single e/3 mode, as is observed at point I in Fig.~\ref{fig:dot_antidot}a.  
    \textbf{(b)} $\nu$ calculated for $E_V/E_C = 0.49$.  
    For this range of parameters, a small island of $\nu=\tfrac13$ forms at the center of the QPC, separated by depletion regions with $\nu=0$ from the E and W regions consistent with the Coulomb blockade observed at point II in Fig.~\ref{fig:dot_antidot}.
     \textbf{(c)} The unscreened potential $\Phi_{ext}$ induced externally by the applied gate voltages compared with the reconstructed carrier density $\nu$ as a function of $x$ with $y=0$ for $E_V/E_C = 0.44$ 
    \textbf{(d)} $\Phi_\textrm{ext}$ and $\nu$ for $E_V/E_C = 0.49$. 
    }
    \label{fig:TF_reconstruction}
\end{figure}


\section{Conclusions}

We have shown that AFM-based local oxidation lithography of graphite gates allows for nanoscale potential control in ultra-clean two-dimensional devices. By realizing clean quantum point contacts in the fractional quantum Hall regime, our measurements pave the way for the full complement of characterizations of ground state topological order.  For example, in semiconductor quantum wells QPCs are the essential component for measurements of the Luttinger liquid parameter \cite{radu_quasi-particle_2008}, quantized thermal Hall effects\cite{banerjee_observation_2018,banerjee_observed_2017}, and anyon interferometry\cite{nakamura_direct_2020}. 
Our observation of a spontaneous Coulomb blockade also suggests that creating  single-quasiparticle quantum dots that may serve as the building block for a topological quantum bit\cite{bonderson_individually_nodate}, may be readily achievable. More generally, the techniques we describe will enable a new generation of devices across a variety of  ultra-clean all-van der Waals heterostructures incorporating high-complexity integrated graphite gates.  


\section{Methods}
\subsection{van der Waals Heterostructure Assembly}
Graphene and hBN were mechanically exfoliated from bulk crystals using a combination of thermal release tape and scotch magic tape.  The initial mother-tape is prepared using 3M Scotch-brand magic tape for graphite or 3M Scotch-brand greener magic tape for hBN.  For hBN, thermal release tape is adhered to the mother-tape to generate a daughter tape.  For graphite, the daughter-tape is made with 3M Scotch-brand magic tape.  The daughter-tape is removed from the mother-tape, cleaving the bulk crystals along the c-axis, then transferred onto a 1cm x 1cm doped Si chip with 285nm of thermally-grown SiO\textsubscript{2} on the surface.  For graphite, the substrate is heated to $110^{\circ}$ C for 60 seconds, before removing the tape quickly to reduce glue residue remaining on the SiO\textsubscript{2} surface.  For hBN, the daughter-tape is transferred onto the SiO\textsubscript{2} surface at room temperature and is removed from the SiO\textsubscript{2} slowly.  The Si/SiO\textsubscript{2} substrates are cleaned by a standard solvent process: the chip is cleaned in acetone for 5 minutes in a high power ultrasonic bath, followed by an IPA wash, and finished with an N2 blow-dry. Additionally, for graphite the SiO\textsubscript{2} surface is treated in O\textsubscript{2} plasma at 100W and 300mTorr for 60 seconds in order to promote adhesion of large multilayers.  The resulting exfoliated crystals are then characterized by optical microscopy.

\par AFM-LAO was performed on a Bruker Dimension Icon AFM.  Exfoliated graphite flakes, prepared as described above, are loaded into the AFM.  The humidity is controlled using a bang-bang style humidity controller.  
The plant is formed by a beaker filled with 250mL of deionized water placed on a hot plate at $120^{\circ}$ C.  
Once the humidity sensor measures higher than 50\% RH, the hot-plate is switched off.  We pattern sub 100 nm  crosses into a 3 nm  graphite flake to form the top gate of the quantum point contact.  This is accomplished using a Pt/Ir coated Arrow-NcPt AFM probe from nanoandmore.  A topographical map of the graphite flake is obtained and the cross pattern is placed in an area with no visible defects.  The lithography is performed in Bruker's Nanoman software package which allows for precise control of the direction, speed, and deflection of the conducting AFM probe.  Graphite can be etched with AFM-LAO under a variety of conditions, however we have found that lithography performed in contact mode with an 18V peak-to-peak excitation at 150kHz provided the smallest line-widths achievable in our system.  For new AFM probes, typical line-widths are on the order of 60-70~nm .  This leads to a QPC critical dimension (tip-to-tip distance) between 90 and 100~nm .  However, due most likely to hydrocarbon build up or natural wear on the AFM probe, the cut-width broadens to 100~nm  after $\sim$150 $\mu$m of cutting.  

\par Before assembling the van der Waals heterostructure we fabricate a `transfer-slide:' a PDMS stamp adhered to a glass slide with a polycarbonate laminate transferred on top used to `pick-up' the first layer of hBN.  Initially, 8g of Sylgard 184 PDMS is mixed in a 10:1 ratio by weight with a curing agent and poured into a standard 100~mm plastic petri dish.  The PDMS is left to cure at room temperature for 24 hours in a vacuum chamber in order to remove any bubbles that formed during mixing.  Additionally, another 3g of Sylgard 184 PDMS solution is mixed with a curing agent and left to cure partially at room temperature under vacuum for 2 hours.  A PDMS cylinder is cut out using a 2~mm hole punch from the 8g PDMS batch and is then adhered to a glass slide using the partially cured PDMS.  An additional droplet of partially cured PDMS is pipetted onto the cylinder in order to form a dome.  Slides are left to finish curing for another 24 hours at room temperature.  The resulting slides are then inspected under an optical microscope for dirt particulates.  


\par The polycarbonate laminate is made from a 13.3\% wt/vol ratio of Bisphenol-A polycarbonate (PC) in cyclopentanone.  Unaided, cyclopentanone will only dissolve a 4\% wt/vol solution of PC, however by using the QSonica 500 ultrasonic wand, solutions up to 15\% wt/vol can be made.  This recipe was derived from previous work by Abbas \cite{abbas_nanofabrication_2013}.  Due to its significantly lower vapor pressure than chloroform, PC dissolved in cyclopentanone can be effectively spun onto a Si substrate.  Thin films of PC are prepared by spinning the mixture onto a Si substrate at 1400 rpm for 60 seconds.  The thin film is then subsequently transferred onto a domed PDMS stamp.  The transfer slide is heated between $160^{\circ}$C to $180^{\circ}$C for 5 minutes in order to increase the adhesion between the PC film and the PDMS stamp as well as to remove any air bubbles that may have formed during transfer of the film.

\par We begin the assembly of the van der Waals heterostructure by picking up an hBN flake larger than 100um in both width and length.  Ensuring the first hBN has the largest area aids in assembling the remaining layers since subsequent crystals will adhere entirely to another van der Waals material.  The transfer slide is engaged at a $0^{\circ}$ tilt angle, with the substrate heated to $70^{\circ}$C, and with the touch-down point 100-150um away from the center of the first hBN layer.  Once the transfer slide is brought into near contact the substrate is heated to $105^{\circ}$C.  This causes the transfer slide to fully engage and laminate over the first hBN layer.  The substrate is then cooled naturally back down to $70^{\circ}$ which retracts the transfer slide and removes the target hBN flake from the SiO\textsubscript{2}.  Next, the AFM-LAO etched graphite top gate is picked up while entirely encapsulated by the large initial hBN layer.  There are a number of advantages to using a domed PDMS transfer slide, one of which is that the engage point is in the center of the PDMS stamp, as opposed to the edge, which has fewer dust particulates that can interfere with assembly.  Moreover, domed PDMS transfer slides are known to reduce strain during vDH assembly \cite{saito_independent_2020}; it turns out this technique is critical for picking up AFM-LAO nano-structures without inducing tears or folds.

The PC laminate is extremely uniform as a result of being spun onto a Si substrate.  This also minimizes a common issue in assembling van der Waals heterostructures where the polycarbonate exhibits stochastic adherence to the SiO\textsubscript{2} substrate.  This often causes a `jerk' like motion during stacking which easily can cause graphite nano-structures to tear.  The remaining layers are assembled in the same manner; the full resulting device stack can be seen in Fig.~\ref{fig:fab_geometry}c. The stack is then deposited onto a doped silicon substrate with 285nm of thermally grown oxide, which forms the basis for a global bottom gate used to dope the graphene contacts.  This is accomplished by engaging the transfer slide and heating the substrate to $180^{\circ}$C (above the glass transition temperature of PC) to detach the PC from the PDMS stamp.  The laminate is then dissolved in chloroform for a minimum of 30 min.  Afterwards, the sample is rinsed in acetone and IPA, and then blown-dry with N2.

\subsection{Device Post Processing}
\par Heterostructures are post-processed using standard electron beam lithography, vacuum deposition, and dry-etching processes.  A device-defining plasma etch is used to separate the nanotextured graphite into four quadrants that we label North (N), South (S), East (E), and West (W): this is accomplished by inductively coupled plasma (ICP) etching in 40 sccm of CHF\textsubscript{3} and 4 sccm of O\textsubscript{2}.  This etch also separates the graphene contacts C1-8 such that any two contacts are only connected through the dual-gated region.  Additionally, the conducting Si substrate is used to dope each contact and prevent the formation of p-n junctions at the boundary between the contacts and the dual-gated region.  Finally, several trenches are etched across the boundary to the dual-gated region to introduce local scattering sites that improve equilibration between the contacts and quantum Hall edge modes in the device region. 

The etch mask is patterned by lifting off 40nm of Al using a polymethyl methacrylate (PMMA) A4 495K / A2 950K bilayer resist.  The PMMA is exposed using a 30kV electron-beam in an FEI SEM at 375uC/cm\textsuperscript{2} and developed in a mixture of DI:IPA 1:3 kept at $10^{\circ}$C.  Al is deposited at 0.3A/s and the lift off is done for over 12 hours in N-Methyl-2-Pyrrolidone (NMP).  Post etching, the Al is dissolved in AZMIF300 photoresist developer which contains $<3$\% by weight of Tetramethylammonium hydroxide (TMAH).  Edge contacts are deposited onto the exposed graphene contacts and graphite gates using the same bilayer PMMA mask.  Before vacuum deposition, a brief contact cleaning etch in an ICP with 40 sccm of CHF\textsubscript{3} and 9 sccm of O\textsubscript{2} is performed.  Subsequently, a metal stack of Cr/Pd/Au 3/15/185 nm  is deposited and lifted off.  Special care is taken to deposit the Cr layer at 0.3A/s in order to improve coating uniformity.


\subsection{Measurement}
\par Experiments were performed in a dry dilution refrigerator with a base temperature of ~20mK.  Electronic filters are used in line with transport and gate contacts in order to lower the effective electron temperature.  To improve edge mode equilibration to the contacts most measurements are performed at 300mK unless otherwise noted.  Electronic measurements were performed using standard lock-in amplifier techniques.  For the diagonal conductance measurements an AC voltage bias at 17.77Hz is applied via a 1000x resistor divider to (see Fig.~\ref{fig:fab_geometry}c for contact references) C3-4 and the resulting current is measured using an Ithaco 1211 trans-impedance amplifier on C5-6 with a gain of $10^{-7}$ A/V.  The voltage is measured between contacts C1-2 and C7-8 with an SR560 voltage pre-amplifier with a gain of 1000.  For two terminal measurements the same AC bias is applied to contacts C1-4 and the current is measured via C5-8.  DC bias was added on top of the AC bias using a passive summer.


\subsection{Thomas-Fermi calculation}

We consider a classical effective model wherein the electron density $n(\mathbf{r})$ of the two-dimensional electron gas adjusts according to the local electrostatic potential and compressibility of an interacting Landau-level (LL).
The classical energy functional can be decomposed into the Hartree energy, the interaction with an externally applied  potential $\Phi(\mathbf{r})$, and the remainder,
\begin{equation}
    \begin{aligned}
        \mathcal{E}[n(\mathbf{r})] &= \frac{e^2}{2}\int_{{\bf{r_1}, \bf{r_2}}} n({\bf{r_1}}) V({\bf{r_1}, \bf{r_2}}) n({\bf{r_2}})\\
        & \qquad \qquad - e\int_{\mathbf{r}} \Phi(\mathbf{r}) n(\mathbf{r}) + \mathcal{E}_{xc}[n(\mathbf{r})],
    \end{aligned}
\end{equation}

$\mathcal{E}_{xc}[n]$ contains not only the exchange-correlation energy but also single-particle contributions (e.g. inter-LL interactions, disorder, Zeeman energies, etc.). If $n(\mathbf{r})$ varies slowly compared with $\ell_{B}$, we may neglect the dependence of the functional $\mathcal{E}_{xc}[n(\mathbf{r})]$ on the gradient $\boldsymbol{\nabla} n$ and employ the local density approximation (LDA),
\begin{equation}
    \mathcal{E}_{xc}[n(\mathbf{r})] = \int_{\mathbf{r}} E_{xc}(n(\mathbf{r}))
\end{equation}
where $E_{xc}(n)$ is determined for a system at \textit{constant} density $n$.
Our aim here is to find the density configuration $n(\mathbf{r})$ corresponding to the global minimum of the free energy $\mathcal{E}[n(\mathbf{r})]$.

The geometry we consider is shown in Fig.~\ref{fig:tf_model_summary}a-b.
There are four top gates a distance $d_t$ above the sample and one back gate a distance $d_b$ below, between which the space is filled by hBN with dielectric constant $\epsilon_{\perp} = 3$ and $\epsilon_{\|} = 6.6$ \cite{laturia_dielectric_2018}.
The N/S gates and the E/W gates are shifted by $w_{NS}$ and $w_{EW}$, respectively, from the center (see Fig.~\ref{fig:tf_model_summary}a-b).
We make an approximation by treating the cut-out ``X''-shaped region to define the gates as  a metal held at fixed voltage $V=0$ (rather than as a vacuum). 
This allows us to analytically solve for the electrostatic Green's function and gate-induced potentials without resorting to e.g. COMSOL simulations.

For a coarse-grained system with a finite resolution grid, the classical energy functional
becomes
\begin{equation}
    \begin{aligned}
	    \mathcal{E}[\{n(\mathbf{r})\}] &= \mathcal{E}_C + \mathcal{E}_{xc} + \mathcal{E}_{\Phi}\\
	    \mathcal{E}_C &= \frac{1}{2 A} \sum_{\mathbf{q}} V(\mathbf{q}) n(\mathbf{q}) n(-\mathbf{q}) \\
	    \mathcal{E}_{xc} &= \sum_{\mathbf{r}} E_{xc}(n(\mathbf{r})) \dif A,\\
	    \mathcal{E}_{\Phi} &= \sum_{\mathbf{r}} \Phi(\mathbf{r}) n(\mathbf{r}) \dif A
	\end{aligned}
	\label{eq:energy_functional}
\end{equation}
where $\dif A = \dif x \dif y$ is the grid area, $A$ is the total area, and $n(\mathbf{q}) = \sum_{\mathbf{r}} e^{-i \mathbf{q} \cdot \mathbf{r}} n(\mathbf{r}) \dif A$.
$\mathcal{E}_C$ is set by the gate-screened Coulomb interaction,
\begin{equation}
    V(\mathbf{q})= \frac{e^2}{4 \pi \epsilon_0 \epsilon_{\mathrm{hBN}}} \frac{4 \pi \sinh \left( \beta d_t|\mathbf{q}| \right) \sinh \left(\beta d_b|\mathbf{q}|\right)}{\sinh \left(\beta(d_t + d_b)|\mathbf{q}| \right) |\mathbf{q}|},
    \label{eq:gate_potential}
\end{equation}
$\epsilon_{\mathrm{hBN}} = \sqrt{\epsilon_{\perp} \epsilon_{\|}}$ and $\beta = \sqrt{\epsilon_{\|} / \epsilon_{\perp}}$. 
$\mathcal{E}_{\Phi}$ is the one body potential term arising from the potential $\Phi(\mathbf{r})$ on the sample due to the adjacent gates,
\begin{equation}
    \Phi(\mathbf{q}) = - e V_{t}(\mathbf{q}) \frac{\sinh(\beta d_b|\mathbf{q}|)}{\sinh(\beta(d_t + d_b)|\mathbf{q}|)} - e V_B \frac{d_t}{d_t + d_b} 
\end{equation}
where $V_{t}(\mathbf{q})$ is the top gate potential and $V_B$ is the back gate potential.

The remaining energy $E_{xc}$ is defined by integrating the chemical potential $\mu$,
\begin{equation}
    E_{xc}(n) = \int_0^{n} \dif n' \mu(n').
\end{equation}
which  encodes information about the IQH and FQH gaps and the electron compressibility. For $\mu$ we use the experimentally  measured value obtained for monolayer graphene in the FQH regime ($B = 18 \, \si{T}$) we reported in an earlier work, Ref \cite{yang_experimental_2021}.

Physically, $n(\mathbf{r})$ can only vary on the scale of the magnetic length $\ell_B$ due to the underlying quantum Hall wavefunction. 
To capture this feature, we implement a square grid with periodic boundary conditions and meshing much finer than the scale of $\ell_B$,
and then evaluate $\mathcal{E}$ with respect to the Gaussian convoluted density profile \footnote{We first use an unbounded range for $n(\mathbf{r})$ to determine the external potential that fix bulk filling $\nu_{EW} = 1$ and $\nu_{NS} = 0$. Then we constrain $n(\mathbf{r})$ to fall in between $\nu = 0$ and $\nu = 1$ such that any transition from $\tilde{\nu} = 0$ to $\tilde{\nu} = 1$ in $\tilde \nu(\mathbf{r})$ has a finite width of scale $\ell_B$.}
\begin{equation}
    \tilde n(\mathbf{r}) = \mathcal{N}^{-1}\sum_{\mathbf{r}'} n(\mathbf r') e^{-\abs{\mathbf{r} - \mathbf{r}'}^2 / 2\ell_B^2},
\end{equation}
where $\mathcal{N}$ is the corresponding normalization factor.
We use a basin-hopping global optimizer with local L-BFGS-B minimization to vary $\{n(\mathbf{r})\}$ and find the lowest energy configuration.

Within this framework, we tune the E/W gate potentials such that $\nu_{EW}=1$ deep in the bulk and the N/S gate potentials such that $\nu_{NS}=0$. 
Various effects of reconstruction can then be explored by appropriately tuning the smoothness of the potential at the $\nu=0$ to $\nu=1$ interface (e.g. by tuning the channel width $w$, gate distances $d_{t,b}$ or gate voltages $\Phi_{g}$).

\section{Data Availability}
The data that support the findings of this study are available from the corresponding author upon reasonable request.

\section{Acknowledgements}
The authors thank J. Folk and A. Potts for comments on the manuscript, and C.R. Dean and J. Swan for advice on humidity stabilization.  
Work at UCSB was primarily supported by the Air Force Office of Scientific Research under award FA9550-20-1-0208 and by the Gordon and Betty Moore Foundation EPIQS program under award GBMF9471. 
LC and NS received additional support from the Army Research Office under award W911NF20-1-0082. 
TW and MZ were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division of the U.S. Department of Energy under contract no. DE-AC02-05-CH11231 (van der Waals heterostructures program, KCWF16).
KK was supported by the U.S. Department of Energy, Office of Science, National Quantum Information Science Research Centers, Quantum Science Center. 
CR was supported by the National Science Foundation through Enabling Quantum Leap: Convergent Accelerated Discovery Foundries for Quantum Materials Science, Engineering and Information (Q-AMASE-i) award number DMR-1906325. 
K.W. and T.T. acknowledge support from JSPS KAKENHI (Grant Numbers 19H05790, 20H00354 and 21H05233).


\section{Author Contributions}
L.A.C and A.F.Y conceived of the experiment.  L.A.C and N.S. fabricated the device measured.  L.A.C and N.S performed the measurements.  L.A.C, N.S, M.Z., T.W., K.K., and A.F.Y analyzed the data and wrote the paper.  M.Z. and S.V. proposed the simulation methodology.  T.W., K.K., and C.R. performed numerical calculations based on the proposed theoretical modeling.  T.T. and K.W. synthesized the hexagonal boron nitride crystals.


\section{Competing Interests}
The authors declare no competing interests.

\section{Additional Interests}
The authors declare no additional interests.


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