In extrinsic semiconductors, because of the abundance of
majority current carriers, the minority carriers produced
thermally have more chance of meeting majority carriers and
thus getting destroyed Hence, the dopant, by adding a large number of
current carriers of one type, which become the majority carriers, indirectly
helps to reduce the intrinsic concentration of minority carriers The semiconductor’s energy band structure is affected by doping In
the case of extrinsic semiconductors, additional energy states due to donor
impurities (ED) and acceptor impurities (EA) also exist