Similarly, in a p-type
semiconductor, the concentration of holes is more than the concentration
of electrons During the formation of p-n junction, and due to the
concentration gradient across p-, and n- sides, holes diffuse from p-side
to n-side (p ® n) and electrons diffuse from n-side to p-side (n ® p) This
motion of charge carries gives rise to diffusion current across the junction When an electron diffuses from n ® p, it leaves behind an ionised
donor on n-side