This process under
forward bias is known as minority carrier injection At the
junction boundary, on each side, the minority carrier
concentration increases significantly compared to the locations
far from the junction Due to this concentration gradient, the injected electrons on
p-side diffuse from the junction edge of p-side to the other end
of p-side Likewise, the injected holes on n-side diffuse from the
junction edge of n-side to the other end of n-side
(Fig