Due to continuous decrease in channel length of the transistor and reduction in the supply voltages, design of operational amplifier (opamp) poses new challenges [1]. Because of the short channel effects limitations in the planar MoS technologies, alternative device structures have been developed and among those FinFET is the most prominent one. Hence, in this study we wanted to explore those advantages of FinFET over MosFET for analog IC design and hence we have designed Miller compensated opamp using 90nm MoS and 32nm FinFET devices. These were evaluated for parameters like power, voltage gain, phase margin, Gain Bandwidth Product (GBW), and slew rate. The results show that FinFET based opamp is better than MoS based opamp in many aspects, about which we have briefed in the comparison and conclusion section of the paper i.e. Section V of the paper.