In this paper the results of layout design and circuit-topological computer simulation of some elements of analytical microsytem-on-chip with the "silicon-on-insulator" (SOI)-structures are presented. These elements were: an input cascade, a basic element of operational amplifier and a ring oscillator based on standard bulk CMOS technology and CMOS technology with the SOI-structures. Also the polysilicon-on-insulator resistive elements were studied in the wide temperature range. Such elements can be used as regular elements matrix for analog and digital signal processing in the integrated circuits and initial processing of analytical information microsystem-on-chip or as sensitive elements of the intellectual sensors of microsystemon-chip.