In this paper, reliability issues of Stacked Gate (SG)-Gate Electrode Workfunction Engineered (GEWE)-Silicon Nanowire (SiNW) MOSFET is examined over a wide range of ambient temperatures (200-600 K) and results so obtained are simultaneously compared with conventional SiNW and GEWE-SiNW MOSFEI using 3D-technology computer aided design quantum simulation. The results indicate that two temperature compensation points (TCP) are obtained: one for drain current (I-ds) and other for cut-off frequency (f(T)) where device Figure Of Merits (FOMs) become independent of temperature, and it is found at 0.65 V in SG-GEWE-SiNW in comparison to other devices, hence will open opportunities for wide range of temperature applications. Furthermore, significant improvement in Analog/RF performance of SG-GWEW-SiNW is observed in terms of I-on/I-off, Subthreshold Swing (SS), device efficiency, f(T), noise conductance and noise figure as temperature reduces. It is also observed that at low temperature SG-GEWE-SiNW unveils highly stable linearity performance owing to reduced distortions. These results explain the improved reliability of SG-GEWE-SiNW at low temperatures over GEWE-SiNW MOSFET. (C) 2016 Elsevier Ltd. All rights reserved.