This paper proposes a new CMOS based Bandgap voltage reference generator (BGR) circuit by using polysilicon resistors in 32nm CMOS technology. This reference generator uses a three stage operational amplifier for improved performance over previously proposed BGR circuits. The proposed design is simulated in Synopsys HSPICE simulator. This circuit produces an output reference voltage of 0.725V at the room temperature (25 degrees C) for the supply voltage of 1.8V. Analysis shows that, a very low temperature coefficient (TC) of 13ppm/degrees C is obtained in the output reference voltage for the temperature range of-40 degrees C to 100 degrees C. Using poly-silicon resistor the area is reduced, without losing too much control over current consumption.