Noise optimization is a challenging problem for nanoscale metal-oxide-silicon field-effect transistor circuits. This brief presents a technique that uses transconductance-to-drain current (g(m)/I-D)-dependent transistor-noise parameters to explore the design space and to evaluate tradeoff decisions. An expression for the corner frequency of the folded-cascode amplifier is derived. The design process demonstrated in this brief using the folded-cascode amplifier is applicable to a wide class of amplifier circuits.