The development of nanotechnology gives new possibilities for fabrication of different x-ray optical elements. We present results of focusing properties the compound silicon linear Zone Plate (ZP) for first and second orders. The compound silicon linear ZP is fabricated by an electron beam lithography and lift-off technology. ZPs structures have been etched by ion-plasma up to 6 mu m deep. A linear ZP of the first and second orders fabricated for x-ray radiation 10kev energy, the focal distance is 57sm. The entire aperture is 357.64 mu m, the width of the outermost zones of the first and second orders are 595nm, and the number of the first and second order zones are: N(1) + N(2) = 251. The experiment was performed at the beam line BL29XU Spring-8 of the Japan Synchrotron Radiation Facility. The experimentally and theoretically investigations were done for x-ray energy at the 10keV and 12.4keV (0.1nm wavelength). The radial distribution of intensity is determined as a convolution of the zone plate transmission function and the Kirchhoff propagator in par-axial approximation. The algorithm is based on the FFT procedure and studied by means of computer programming simulation.