The feature size of integrated devices has entered nanometer. Single-electron transistor (SET) is satisfied as nanoelectronic devices, and the SET will be mixed with the composition of nano-MOS devices (SETMOS), is one of the hot current study. SETMOS as a new hybrid device combine the advantages of both, it also has the same Coulomb oscillation characteristics with the SET and MOS high gain. Integrated analog signal processing filters as the basic unit circuit, it must conform to the development of the times. In this paper, based on a SETMOS hybrid device I-V characteristics model, a SETMOS integrator is realized based on this model, and then a second order low pass filter is designed and implemented by using the SETMOS integrator. It is expounded that there is the structure, operating condition, performance, parameter and characteristics for the SETMOS second-order low-pass filter. It is analyzed that are the transmission characteristics and DC gain of this filter, as well as the cutoff frequency and the parameters are related. In theory, it is explained that the hybrid SETMOS second low pass filter in the nano-circuit can be worked with 10(10)Hz frequency band. The transmission performance of the filter designed is simulated by SPICE. The simulation results confirm that the hybrid SETMOS filter has good frequency characteristics in the pass band range. The low-voltage, low power and high frequency characteristics are demonstrated in the SETMOS second low pass filter. The method proposed in the paper is also applicable to other analog circuits composed by the hybrid SETMOS architectures.