Low Drain-Source MOSFET Leakage
I have recently characterized several signal and even power mosfet devices (e.g. FDP6030BL in TO220 case), at room temperature, using an Agilent B1500. To my extreme surprise, the OFF-state (Vgs=0) drain current in most of the cases (even in power devices!) was between 0.1 pA and 10 pA (at about Vds=20V), despite it was 1uA in all the datasheets. The worst ones had 100pA.
Still, this does not mean that all the devices will show such good OFF-state performances!