Why is parasitic capacitance much more mentioned than parasitic inductance in MOSFET?
For typical uses (very generally 10 - 100 V; 1-10 A, &lt; 10 MHz), the physics of silicon mean that the capacitance of the FET structures (and parasitics associated with them) have values which have a more significant circuit effect than the inductance (generally associated with bonding wires and the package structure). 

However, at high frequencies (certainly > 100 MHz); with certain DC/DC converters (low V, and high currents), the inductive parasitics can become significant and are critical. In these operating ranges, inductance in the gate lead can significantly affect the rate at which the transistor can be switched; inductance in the source can also affect this. inductance in the drain can cause large damaging voltages to appear between the internal transistor source and drain nodes, potentially damaging the device.