Doped PNP Bipolar Transistor
Any Bipolar junction transistor (BJT) constitutes :


a heavily doped emitter
a lightly doped and small size base
a moderately doped collector


So according to your question, the emitter should have been doped to a concentration of 10^23/cm^3, the base doped to 10^16/cm^3 and the collector doped to a concentration of 10^18/cm^3.

Now your assumption about the emitter being connected to a P region, the base to a N region and the collector to a P region is correct.

And keep in mind that a Si atom has 4 valence electrons and that hole concentration will be in the order: emitter > collector > base and reverse for electron concentration.The calculations are quite easy to do.