MOSFET Drain-to-Source Leakage Current over voltage and temperature
The leakage current and the breakdown voltage Vds_max are not so related in my opinion.

Leakage current can be lowered by an increased gate doping which in turn increases the MOSFET's threshold voltage. The switching MOSFETs you're looking at are designed to have a low threshold voltage and are thus more "leaky".

The breakdown voltage Vds_max is related to the doping profile of the drain, it has no direct relation to leakage as far as I know. A high breakdown voltage means a more lightly doped drain and this could result in a higher Rds_on.

You could search for a MOSFET with a high threshold voltage, maybe it will also have lower leakage.