high side switch using NMOS
In this configuration, the maximum voltage you can get across the load resistance will be equal around: 
\$12V - Vgs = 10.5V\$. 
Also, the power losses in the MOSFET will be higher than normal.

\$P_{tot} = V_{GS}*I_D \approx 1.5W\$ instead \$P_{tot} = Id^2*R_{DS(ON)} \approx 65mW\$  

I recommend adding a MOSFET bootstrap circuit and a Zener diode to limit the \$V_{GS_{max}}\$ (below 10V)







simulate this circuit &ndash; Schematic created using CircuitLab