possible CMOS techniques for altering the pulsewidth and phase shifting of a pair of complementary squarewave signals
The dead time commutation method is used in all half bridge designs to prevent shoot through on any half or full bridge.  The internal measurements are dependant on loading called propagation delay \$p_D\$. And deadtime.
It is often done with skewed rise/fall times internally using nonlinear R//diode:RC filters then limited.
You must define the back EMF duration time to protect this and it can span a wide range depending on load inductive current and L/R ratios.  I often see 0.1% to 1% deadtime depending on speed of output stage.
So first define the loads and desired deadtime , the temp, V and tolerance variables and the entire RLC, clamp diode equivalent frequency Spectral noise response and efficiency of switch with SOA limits on VI power dissipation.
I see around 40ns deadtime on each edge with a 1us square clock period.  normally high side is direction for a full bridge and bottom side is PWM for dual Nch drives so bottom side pumps the boost charge cap high side while regulating duty cycle of power.
Define worst, best case deadtime vs load. Design the delay times according to voltage and component threshold tolerances.  once you define your limits your options will be clear.
E.g. normally rise times are &lt;&lt; delay times for pre-driver
consider

Use an 2 RC or LC delay lines buffered loaded for no overshoot each xx ns and use NAND Gates with 1st= early , 2nd = normal and 3rd = late pulse then NAND all 3 inputs and 3 inverted inputs to get reduced edges on each.

This was always done one original 5.25 HDD to compensate for bit shift on inner higher density tracks and called “precompensation design for HDD bit shift” . You can search for better solutions using this.
I have used 10% dead time using a Johnson counter at 10MHz for pulse shaping then ECL or CML for faster inverters depending on if you want synchronous full bridge or skewed.  BUt you can now use 74ALCV inverters with 2ns PD