NPN and PNP Built-in Voltage
No, the built-in voltage of the base-collector (BC) and base-emitter (BE) junctions will normally not be the same. The built-in potential of a P-N junction is determined by the equation:

Vbi = kT/q * ln(Nd * Na / (ni * ni))

Source: http://www.eecs.berkeley.edu/~hu/Chenming-Hu_ch4.pdf

Vbi is the built-in voltage. Nd is the donor concentration, Na is the acceptor concentration ni is the intrinsic charge carrier concentration of silicon, k is the Boltzman constant, T is the temperature in Kelvin, and q is the charge of an electron.

So, assuming constant temperature, the built-in voltage is determined by the dopant levels in the two silicon regions (P and N). Normally, I believe the emitter will be more heavily doped. Thus, the built-in voltage of the BE and BC junctions will normally not be the same.