N-MOSFET overheating?
Don't feel bad, some student every day makes this mistake of not having enough Vgs.

This 1mΩ FET turns into 5mΩ at 2.5V from fig 12 in datasheet and then increases 50% when it gets hot. from fig 13 and thermal resistance case to ambient depends on a heatsink of the copper substrate ( of course using recommended layout for Power-SO-8) which otherwise will get  hot if your load current exceeds 200mW or W/R=I^2 or 0.2W/5mΩ ... or > 6A

There may be other causes as well.

So make sure you have enough Vgs.  Charge pumps are often used or PWM with a boost diode cap.

Rule of Thumb

Ensure Vgs is >=3x Vgs(th) threshold.