Is writing in FeRAM memory cell destructive?
Some DRAM can be affected in that way, because storing a charge on a capacitor is a linear operation, and the effects of perturbations accumulate.

But the ferroelectric material used in FRAM is bistable, and requires a certain minimum energy to change state. If any individual perturbation isn't enough to change the state, then the effects of multiple perturbations do not accumulate.