mosfet capacitance charging question
It depends on FET diode and Vgs.


dV/dt = Ic/Coss
Icoss= (5V-Vds)/ R when Vgs
initially when FET is turned off, the body diode causes Vds =Vgs-Vf


When Vgs goes to 3.3 and Vds goes to 3V the rest is probe capacitance ?? pF +Coss and R pullup

Here your rise time is 2 us thus C=t/R=2us/10k=200pF
This is consistent with fig 5 on your missing data sheet. For Coss vs. Vds

This explains your results.

Remember this.


low RdsOn FETs will have high Coss and Coss(Vds)*RdsOn(Vgs) = FoM a figure of merit that changes with FET design and Vgs max