High current hot switch capable
This is requirement that could be easily met by many MOSFETS or IGBTs. A GTO thyristor is harder to control and need not be considered unless you have some special love of them. 

If you do not trust properly designed and properly rated and properly constructed MOSFET (or IGBT) 'transistor' circuits then the following is of no value to you. 

If you accept proper design will allow a highly reliable product to be built then read on.

Taking your worst case of 500 uF at 350V discharged in one centisecond.

Energy = 0.5 x C x V^2 = 30.625 Joule. Say 40 Joule = 40 Watt.seconds.

If discharged in 1 centisecond = 0.01 second then Wattage = 40/.01 = 4000 Watts.

At 350 V, i = W/V = 4000/350 = 11A.

There are many possible devices that would suit, but until more detail is available, here is an example device that should be suited. 

IXYS IX50N60P3 600 Volt 50A N Channel MOSFET
In stock $7.40 /1

145 milliohm on resistance. Avalanche rated.  1 kW power rated (don't try it). Sensible TO247 package. Thermal resistance of 0.25 C/W.

The Rdson (on resistance) is pulse rated so lets make it 0.2 ohm.
At say 12 A the dissipation is I^2.R = 12^2 x 0.2 ~= 30 Watts.
Case rise = 0.25 C/W  x 30W = 7.5 degrees C.
Add heatsink as desired. Note that is for a continuous 12A and you are pulse discharging. 

Care needs to be taken that all relevant facts are known. The above does not discuss energy handling at turn off - not hard, just needs designing. 

If you can provide a more detailed description then a more detailed answer can be given, but the above shows that the task is entirely doable with off the shelf parts.