Temperature-Dependent Electrical resistance Si and SiC
Here is a link that helped me (Page 2 of 6 shows good comparisons): https://www.fairchildsemi.co.jp/Assets/zSystem/documents-archive/collateral/technicalArticle/Overview-of-Silicon-Carbide-Power-Devices.pdf

To summarize:


Higher band-gap energy variance
Lower magnetic reluctance 
Higher thermal condcutivity
Higher hole and electron mobility (more scattering is possible, meaning more variance)