NAND gate from BJTs: interfacing +/- 12v op-amp and 5v logic: destroy BJT with excessive Vebo?
No, it won't destroy &mdash; or even stress &mdash; Q1.

Remember, the base-emitter junction of a transistor is just a diode, after all. If there's no external connection to the emitter (e.g., when Q2 is cut off), then it simply sits about 0.65V below whatever the base voltage is.

The VEBO specification applies only when you're deliberately reverse-biasing that diode, which, because of the doping of that junction for good transistor action, has a very low breakdown voltage.