Choice of dopants for semiconductors
Boron (acceptor) and Phosphorus/Arsenic (donor) are common the dopants used for Silicon devices. Different dopants has to be used used for another semiconductor. I don't know if doping can be done by changing the composition in compound semiconductors. But other atoms can be used to dope compound semiconductors also. For example, Zinc (acceptor), Sulphur (donor) and Silicon (amphoteric) can be used for Gallium Arsenide. 

Other than the process compatibility and cost effectiveness, few conditions that a dopant should satisfy are


Dopants will introduce an energy level (acceptor or donor type) in the forbidden gap of the semiconductor. These energy levels should be closer to the band edges (valance or conduction band) so that the dopants are active at room temperature. 
The dopant should have good solubility in the semiconductor. More the solubility, more the doping concentration that can be achieved. 


I don't know if there are any advantages of using multiple dopants. It's defenitely increases the cost as multiple dopants demands additional tools or extra fabrication steps. 

Since nitrogen is a gas, it is not a a good idea to use it as a dopant. But if we take an arsenic doped and phosphorus doped region, the electrical properties will be same for practical range of temperatures and dopings.