high side vs low side load control
There is no detriment to low side control if you're using an N channel MOSFET as a low side switch and you've got 3.3 volts for gate drive and that 3.3 volts will fully enhance the switch.

There's a small penalty to pay for using a P channel MOSFET as a high side switch with 3.3 volt gate drive and a more positive source supply, and that's that since in order to fully turn off the MOSFET, its gate must get close to  the source voltage.  That isn't possible with 3.3 volt drive since it can only rise to 3.3 volts, so another transistor must be used - N type with a pullup to V+ - so that when the 3.3 volt drive goes low the transistor cuts off, which will force the PMOSFET gate to V+ through the pullup, turning it off as well.

There are substantial penalties to pay for using N channel MOSFETS as high side switches, since to fully enhance them requires that the gate voltage be higher than the source voltage.

With the load connected to the source, in order to fully enhance the MOSFET, the gate voltage must rise to a voltage higher than the drain voltage in order for the supply voltage to appear across the load. Here are the circuits, and here is the LTspice circuit list for anyone who's interested in running a simulation: