Electrical principle of row hammer glitch
Its not the data storage capacitors interfering.  The problem is capacitive coupling between the row select lines.  When you read a DRAM row, you drive the appropriate row select line high, which turns on all of the transistors in that row, which dump their charge into the column lines.  This is OK, because you then amplify the signal and drive the column lines, refreshing the capacitors.

The problem exploited by rowhammer is that each row select line capacitively couples to the adjacent row select lines, and turns their transistors very slightly on.  Each time that happens, a tiny fraction of the charge stored in the capacitors leaks out through the slightly "on" transistor.  If you do it enough times before a refresh, the row will lose its data.