Metal semiconductor contacts
My got to these questions is always Sze - "physics of semiconductor devices" Fig 13 in my version shows the doping capabilities of various elements against Si, Ge and GaAs.  Ti in Si is 0.21 eV away from the conduction edge for example.

Fermi level pinning refers to the surface states having having trapping centers that respond slowing and thus dominate the fermi level in the bulk.

What is interesting is that the P-Type contact (or I am have it backwards - i.e. N-Type) under classical analysis cannot form a ohmic contact.  It took a while to realize that the contact was dominated by QM effects.

A lot of contacts are actually silicides, in 0.5 um processes (if memory serves me) it is NiSi, CoSi is common in the 180 - > 90 nm era.

Gold in Si has two states, a Donor that is 0.26 eV above the valence band and an acceptor that is 0.54 eV below the conduction band.

Interestingly, in Ge most metals have multiple ionization levels but chromium has two closely spaced Donor levels that might work as a diode.

I am surprised that you got any annealing at 300 C it usually takes until 900 + C before Si can re-anneal from implant damage.  That is what RTP does.