Half bridge galvonic gate drive with deadtime
No. The two 1n4148 diodes ensure that when the gate drive transformer secondaries start to reverse their polarities, the currently conducting IGBT turns off faster than the currently blocking IGBT, creating a very bried period where both are off (the dead time). This is because the parasitic gate capacitance of the IGBT to be turned on has to be charged trough the 6.8 ohm resistor, while the gate charge of the opposite IGBT can bypass the resistor by flowing trough the diode.  
Fully isolated MOSFET/IGBT drivers for this purpose do exist, if you need more control over the transistors and/or if you want even faster switching. Digikey lists over a thousand isolated gate drivers, e.g. ucc21520