What is the need for precharging in SRAM/ DRAM memory cell?
Precharging is not intended to deal with the ability to source drive current into a bit line. Precharge is intended to minimize propagation delay time.
If there is no precharge, the maximum voltage swing in a readout is from a &quot;0&quot; to &quot;1&quot; (or vice versa), which happens in T01.
Precharging ensures that the bit line is driven to voltage midway between &quot;0&quot; and &quot;1&quot;, so that when the actual cell is read out, the line need only be driven from the midway voltage to either &quot;0&quot; or &quot;1&quot;. This results in about one half the transition time (1/2*T01), and results in a faster memory.