FET vs bipolar junction transistor
If you wish to avoid holy wars you'll need to avoid making simplistic and incomplete statements :-).

Bipolar transistors are current driven.  

MOSFETs are voltage driven.  

In both cases the spread of parameters during manufacturing is such that a circuit will almost always rely on feedback to produce a given voltage or current gain.

MOSFETs tend to be slightly more costly at the very bottom end for "jelly bean" applications. But, for switching more than a few ~100mA, MOSFETs are usually as cheap or cheaper than functionally equivalent transistors, are easier to drive from a uC (microcontroller) as a digital switch than bipolar transistors and tend to have very significantly superior on characteristics. 

An "on" bipolar transistor exhibits a saturation voltage. This can be several tenths of a volt and to get it much under 0.1V usually requires a high base to collector current ratio that is undesirably high. At 1 A a 0.1 \$V_{sat}\$ (saturation voltage) dissipates 0.1 W and is the equivalent of a R = V/I = 0.1/1 = 100 \$m\Omega\$ transistor. But at 10A the figures are 1 Watt dissipation and  10 \$m\Omega\$. The 0.1V is very difficult to achieve at higher current levels.

The \$R_{DSon}\$ (Drain-Source on resistance) of MOSFETs is typically under 0.1 \$\Omega\$ and you can get devices with 10 \$m\Omega\$ or even sub 1 \$m\Omega\$. 

As switching speeds rise MOSFETs need a gate driver to charge and discharge the gate capacitance. These can be relatively cheap. 

More soon ....