Transistor absolute maximum Collector-Base voltage more than Collector-Emitter voltage
Just to make the terms explicit, \$V_{cbo}\$ is the maximum voltage that can be applied between the collector and base of a BJT while the emitter is left unconnected, and \$V_{ceo}\$ is the maximum voltage that can be applied between the collector and emitter of a BJT while the base is left unconnected. There is a huge difference between these situations.

With the \$V_{cbo}\$ case, some leakage flows between the collector and the base and this may cause the part to warm up a little. This is just a diode involved, though. So in this case, they just specify the voltage below which the part isn't damaged and from which the BJT can recover itself.

With the \$V_{ceo}\$ case, it's similar in a lot of ways. But now we aren't talking about a diode, but the entire transistor structure. So with the base open, any leakage current will also become an enabling base current, which of course is then amplified by the transistor's \$\beta\$. So that will lead to still more current, etc., heating it up still more.

That's the main reason I'm aware of why it's often true that \$V_{cbo} &gt; V_{ceo}\$.