diodes selection for MOSFET protection against inductive load
First of all Is the configuration correct? I don't get why you need a clamp on the gate of the PMOS. 


Bot of your configurations are correct. For the \$p\$-channel MOSFET circuit you need the gate clamp because, when the input signal \$\mathrm{GPIO2}\$ is zero, \$V_{GS_{Q_1}}\$ can range from \$-5\$ to \$-60\mathrm{V}\$ and this is clearly unacceptable. 


  Next is how do I select the values for diode and zener diode? what would their power rating be?


I'll show you the calculation for the \$n\$-channel MOSFET circuit as for the \$p\$-channel one the method is entirely analogous.


First, let's calculate the drain ON current, i.e. the current flowing when the MOSFET is fully conducting:
$$
I_{DQ_{2_\mathrm{ON}}}\simeq\frac{V_{DD}}{R_1+R_{DS_{Q_2}}}
$$
where \$V_{DD}\$ is the power supply voltage, ranging from \$5\$ to \$60\mathrm{V}\$ as stated in your schematics, while \$R_{DS_{Q_2}}\$ is the drain-source ON resistance of the MOSFET \$Q_2\$.
The current \$I_{DQ_{2_\mathrm{ON}}}\$ is the initial current \$I_{0_{L_1}}\$ which flows in the \$L_1\$ inductor when \$Q_2\$ is turned OFF, and assuming that the MOSFET is able to do so in negligible time, by applying the Kirchhoff current law to the drain node of \$Q_2\$ we have that
$$
I_{A_{D_1}}=I_{A_{D_2}}=I_{0_{L_1}}=I_{DQ_{2_\mathrm{ON}}}\;\text{ at }\;t=0_+
$$
Then you should choose a freewheel diode and a Zener diode in order that the following maximum power relationship are always fulfilled
$$
\begin{split}
I_{DQ_{2_\mathrm{ON}}} V_{A_{D_1}}&amp;\le P_{D_{1_\max}}\\
I_{DQ_{2_\mathrm{ON}}} V_{Z_{D_2}}&amp;\le P_{D_{2_\max}}
\end{split}
$$
where \$V_{A_{D_1}}\$ is the anode voltage of the \$D_1\$ diode when its anode current is \$I_{A_1}=I_{DQ_{2_\mathrm{ON}}}\$ and \$V_{Z_{D_2}}\$ is the nominal Zener voltage of the Zener diode \$D_2\$.