F-RAM Read Operation Data Loss
It is my understanding that when a certain address in F-RAM is read the data at that address is lost. While in S-RAM the data remains after a read.


Correct. Reading from a ferroelectric cell involves forcing the ferroelectric material to a given polarity and seeing if any electrical excitation occurred from the change, as opposed to reading from a SRAM cell which involves redirecting a minute amount of current from the latch.


  Since the equipment was not designed with F-RAM in mind and it's not writing the data back since it was designed to use S-RAM. Am I correct in assuming that F-RAM has internal circuitry to automatically write back to itself after a read?


Also correct. F-RAM ICs from Ramtron/Cypress are intended to be drop-in replacements for SRAM ICs, and this can only be done if the IC itself contains the circuitry to restore the value stored in the cell before reading.