MOSFET Drain to Source Short
you have too many things wrong in your design .

first of all it is not clear whether you are trying to make a half bridge , low side or high side switch . But the way i understand , it looks like a high side switch with 2 mosfets in parallel.


the gate drive is horrible , 10k gate resistors are not suitable for high speed switching . and the gate drive supply must be from 10v to 15v , you can add zeners to clip over voltage at Vgs.
adding a capacitor at the node Vgs is a bad idea , donot do it .
mosfet Vdss should be 2x Vcc of the system (42v in your case ) so 100v might be a good start. 
capacitors at 63v is a bit risky also they should be 75v and up , because of the spikes caused by inductive switching . (by the way the inrush current the capacitors draw is very normal and is the least of your worries)


5. if N-channel mosfets are used in high side configuration you need a gate driver ( isolated , boot strap , charge pump , etc .... ) in order to work.

Recommendations:

1.use dedicated gate driver and copy schematic from the dataheet.

2.use the n-channel mosfets in low side switch configuration 

3.use P-channel instead and stay in high side configuration.

4.USE a HIGH SIDE switch for automotive , some are rated for 42v system , they contain all the necessary parts and come with all sorts of protection.

infineon for example