Return Paths of Parallel FETs
"Ringing" in your circuit may not have anything to do at all with the gate drive. I have built inverters up to 1MW at 25kHz (induction heaters), using many parallel IGBT's (and smaller power units using FET).

There is inductance (call it Lx) from your 2200uf capacitors to the transistors. Even with the best design of gate drive circuitry, you can experience "ringing" in the overall circuit. Snapping off the transistor when there is 60A flowing in the Lx can cause ringing upon your "Vbat". The ringing will be observed in many test points through-out your system.

Solution to this type of ringing is to put additional capacitors (smaller, e.g. 1uf non-electolytic) across each high side, low side transistor pair. Thus reducing the L from positive rail to negative rail in each of the paralleled transistor pairs.