How to approach the circuit analysis of a BJT in saturation?
what is the way to approach things like that?


Since \$V_E = 0 \$, the transistor will be saturated when \$V_C = -0.2V\$.  Thus

\$I_C = \dfrac{4.8V}{2k \Omega} = 2.4mA\$

\$I_B = \dfrac{2.4mA}{50} =  48uA\$

Then, by KVL:

\$V_1  = V_{EB} + 48uA \cdot 50k \Omega = V_{EB} + 2.4V\$

So, assuming \$V_{EB} = 0.7V \$ (a reasonable assumption)

\$V_1 = 3.1V \$