n-EMOSFET circuit analysis
For this circuit the Source terminal is connected directly to ground. And the Gate is connected the voltage divider output. Therefore
$$
 Vgs = V_{DD}*\frac{R2}{R1+R2} = 15V\frac{18k\Omega}{47k\Omega+18k\Omega} = 4.153V   
$$

Drain current is equal to: 

$$
I_D = K(V_{GS} - V_{TH})^2 = 1mA/V^2 *(4.153V - 3V)^2 = 1.329mA 
$$

Additional form KVL we have: 

$$V-{DD} = I_D*R_D+V_{DS}$$ 

$$V_{DS} = V_{DD}-I_D*R_D = 15V - 1.329mA*3.3k\Omega = 10.6V $$ 

Now we need to check if MOSFET is in saturatuion \$V_{DS} &gt;(V_{GS} - V_{TH})\$

In our case 10.6V > 1.153V this means our assumption about MOSFET active region (saturation) is true.