Confusion regarding Common-Emitter configuration of a BJT
I am having difficulty understanding how the Base is at a higher potential than the Emitter, and how the Collector is at a higher potential than the base.


You're using ideal voltage sources to bias your transistor so it's very simple:

The base is at a higher potential than the emitter whenever the voltage source \$V_{BB}\$ has a positive value. 

The collector is at a higher potential than the base whenever the voltage source \$V_{CC}\$ has a higher output voltage than \$V_{BB}\$. 

Note: In the real world, you'd need \$V_{BB}&gt;0.6\$ or so and \$V_{CC}-V_{BB}&gt;-0.3\$ or so (rather than just have these values be greater than 0) to get into forward active operation.