Parallel capacitance
Not really. But you can be more careful in MOSFET select using RdsOn*Ciss product figure of merit (FoM) vs Vds max. Then use R,C,CR (diode) serial impedance to optimize dead-time by skew between rise time and fall time.

You can also find out which MOSFETs have a PTC characteristic with RdsOn so that thermal runaway can be easily avoided. 

If you can't find one then you can add a PTC at any trip current and Curie temp from 50 to 125'C in SMD.

Other pitfalls with current shared MOSFETs , especially with current limiters operated at low limits under a short circuit fault condition. See below.

https://www.onsemi.com/pub/Collateral/AND8199-D.PDF