Memory row driver does not have enough driving power
This is a common problem in VLSI design. You just need to add pairs of inverters in series, increasing the W/L ratios of the transistors by a factor of about 4X in each subsequent inverter as you get closer to the row line load. Each pair of inverters acts as a non-inverting buffer, but the drive strength increases by up to 16X.
The transistors in the inverter will start to get large, so you will probably need to use multiple parallel transistors (really just fingers of gate poly) to make the big inverters.