Difference between MOSFETs
My valutation is based on IDrain and Rdson. Are these 2 variables
  sufficient or am I missing something else?


Those parameters allow you to consider static power loss situations. You also need to consider peak voltage ratings and the TI device looks comparable but might need more heat-sinking because it looks a smaller device - look for the temperature rise per watt information and make comparisons.

Peak gate drive voltages are both +/-20 volts so that's a no-brainer.

Regards switching losses, you need to compare rise times and fall times given the driver you are using and the output and reverse transfer capacitance of the device. One worry is that the reverse transfer capacitance of the TI part looks remarkably low at 7 pF (typical) yet appears to be around 20 pF in the graphs (a quick look so I could have been mistaken). I would want to clarify this discrepancy before making a decision on which way to go.

Anyway, for your sort of application this is what I'd want to compare.