use bjt or mosfet in h-bridge with inductive load?
When you've chosen particular BJTs or FETs that are specified to take your particular current and voltage, there will be little difference in their expected reliability and durability.
What will make a difference is your design, and your implementation of that design in hardware.
An inductive load will require clamping, otherwise it can produce large voltage transients. Generally, FETs have a parasitic diode inside which also tends to be specified to be suitable for clamping. But check. BJTs will need an external clamping diode. Make sure the clamp is close enough to the BJTs to be effective, the inductance of long wires can allow higher transients than you expect.
The devices will require proper heatsinking. Make sure the interfaces, device to heatsink, are sound and durable.
Turn them on and off fast enough (needs a well designed base/gate driver) so that transient dissipation is minimised, but not too fast, so that voltage transient generation is minimised.
You might want to consider IGBTs instead of BJTs, at least at higher voltages where the saturation voltage is less of an efficiency hit. They are effectively BJTs without the steady base current requirement.