I designed a 4 Resistance biased amplifer, I used the Voltage divider MOSFET amplifer circuit for 2N7000
This MOSFET in particular has a Vth of 0.8v min and 3V max that is a big range, you will have to handpick one when you build the circuit. What you can do is use the mean, which is around 2V, coincidentally, the SPICE model I have uses 2V as Vth.
The selection of the Source resistance has an impact on gain and DC point stability, the gain of the amplifier without considering source resistance or load resistance is roughly RD/(RS+1/gm), so in your circuit you have a gain of less than 20 because you have to add 1/gm to the source resistance since your source resistance is too low, if you increase the value of the source resistance then 1/gm will have less impact on the gain and linearity will improve, in which case gain can be estimated as RD/RS if RS &gt;&gt; 1/gm, so you can select the source resistance based on the required gain, remember that source degeneration increases linearity but lowers gain.
You can choose Rs on the basis of a specified gain, you can also select Rs on a specific voltage drop, for instance 1/4 VDD. What is your application?
These sort of one transistor amplifiers are far from what can be described as hi-end. Distortion is quite high. R1 and R2 are a bit low for my taste for a MOSFET amp.