Can hydrofluoric acid etch glass at a pH of 7.0?
In $\ce{SiO2}$ etching, there are two active fluorine-containing species, $\ce{HF}$ and $\ce{HF2-}$.

The rate of etching at 25 degrees C in Angstroms per second is:

$$9.66[\ce{HF2-}] + 2.50 [\ce{HF}] -0.14$$ 

according to A Study of the Dissolution of SiO2 in Acidic Fluoride Solutions J. Electrochem. Soc. vol. 118, pp. 1772-1775.

The relavent equilibrium constants at 25 degrees C and ionic strength of 1M are

$$\frac{[\ce{H+}][\ce{F-}]}{[\ce{HF}]} = 0.0013M $$

$$\frac{[\ce{HF}][\ce{F-}]}{[\ce{HF2-}]} = 0.104M $$

Because of the -0.14 term in the rate equation, only at enormously high F- concentration would there be etching at pH 7 (such as in this situation).  

This study was concerning high (~1M) concentrations of fluorine species, so it might not be completely relevant for low concentrations or very long time periods.