Will silicon dioxide react with hydrochloric acid?
According to the paper by Chung and Sturm [1], $\ce{HCl}$ will do a very small amount of etching at high enough temperatures (525 °C will give you about 1 nm/min), but the presence of hydrogen limits the reaction because the formation of $\ce{HCl}$ is preferred to the formation of $\ce{SiCl4}.$

References


Chung, K. H.; Sturm, J. C. Chlorine Etching for In-Situ Low-Temperature Silicon Surface Cleaning for Epitaxy Applications. In ECS Transactions; ECS: Chicago, Illinois, 2007; Vol. 6, pp 401–407. DOI: 10.1149/1.2727426.