Difference between vapor-phase transport and vapor-phase deposition?
The paper of interest is C.M. Wolfe et al., "Growth and Dislocation Structure of Single-Crystal Ga(As$_{1-x}$P$_{x}$)", Journal of Applied Physics 36(12) 3790 (1965). 

The key paragraph is: 


  The GaAsP of this investigation has been prepared
  by a closed-tube method utilizing a quartz ampoule
  which is cleaned and baked-out under vacuum near
  the softening point of quartz. The halide is introduced
  by subliming a metallic halide, such as PbCI2, PbI2,
  NH4CI, NH4I, etc.,ro into the reaction vessel. Typically,
  2.2 g of source GaAs and GaP, 4-8 mg of excess P,
  40-160 mg of halide, and a dopant are placed in an
  8-cm$^{3}$ ampoule as in Fig. 1. This vessel is then evacuated
  to 10$^{-6}$ Torr, sealed, and placed in a single-zone furnace
  at 950°C with a gradient of 5°-15° along the tube.
  Commercially available GaAs is used with GaP grown
  from high-purity elements by a method previously
  described.


So, yes, it is a vapor deposition technique, but uses a thermal gradient to evaporate from one place and redeposit in another place, controlled by the temperature.