pping of RF components and technologies to spectrum bands [48]. TDD bands 700 MHz-3 GHz 3-6 GHz B42/ 24.25-29.50 GHz 37-71 GHz B43/B46 FDD bands 700 MHz-3 GHz 3-6 GHz Front-end Sub-6 GHz frequencies mmWave frequencies technology FEMiD/PAMiD5/ FEMiD/PAMiD/ 8Tx X 8Rx antenna 8Tx X 8Rx antenna complete front-end complete front-end Power amplifier III-V°/SiGe°/Bulk III-V/SiGe/Bulk InP/SiGe BiCMOS/ InP/GaN/SiGe BiCMOS/ CMOSF Advanced SOI Advanced SOI Low-noise III-V/SiGe/SOI III-V/SiGe/SOI Advanced SOI/GaN SiGe BiCMOS/Advanced amplifier RF switching SOI CMOS SOI CMOS Advanced SOI Advanced SOI Filtering Acoustic/IPD/ Acoustic/IPD/ IPD/Ceramic Ceramic Ceramic Antenna integration Signal generation Advanced SOI/SiGe Advanced SOI/SiGe method BiCMOS BiCMOS DRx, Diversity receive module; FEMiD, front-end module with integrated duplexers; IPD, integrated passive device; PAMiD, power amplifier module integrated duplexer; SOI; silicon on insulator. aFEMiD. bpamid is a multimode multiband RF front-end module that integrates multiplexers, filters, antenna switches, and low-noise amplifiers allowing highly integrated transmit and receive chains. 'DRx combines switches, filters, and low-noise amplifiers into a module, providing a highly integrated solution for implementing high-order diversity receive paths for advanced 4G/5G architectures. dA substance that can act as an electrical conductor or insulator depending on chemical alterations or external conditions. Examples include silicon, germanium, and gallium arsenide. It is called III-V materials since semiconductor elements are in groups III and V of the periodic table of chemical elements. Silicon Germanium process Bulk CMOS refers to a chip manufactured on a standard silicon wafer. SOI technology refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconduc- tor manufacturing, especially microelectronics, to reduce parasitic device capacitance, thereby improving performance. technology and spectrum, as well as the 