 vol. 39, no. 6, pp. 1613-1621, Dec. 1992. [240] H. Dussault, J. W. Howard, Jr., R. C. Block, M. R. Pinto, W. J. Stapor, and A. R. Knudson, "Numerical simulation of heavy ion charge generation and collection dynamics," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1926-1934, 1993. [241] H. Dussault, J. W. Howard, Jr., R. C. Block, M. R. Pinto, W. J. Stapor, and A. R. Knudson, "The effects of ion track structure in simulating single event phenomena," Proc. RADECS93, pp. 509-516, 1993. [242] M. Kurata, Numerical Analysis for Semiconductor Devices, (D. C. Heath and Co., Lexington, 1982). [243] S. Selberherr, Analysis and Simulation of Semiconductor Devices, (Springer-Verlag, Vienna, 1984). [244] M. S. Lundstrom, Fundamentals of Carrier Transport, Volume X of the Modular Series on Solid State Devices, (Addison-Wesley, Reading, MA, 1990). [245] Davinci 4.1 User's Manual (Avant! Corporation, TCAD Business Unit, 1998). [246] T. R. Weatherford, D. McMorrow, W. R. Curtice, A. R. Knudson, and A. B. Campbell, "Single event induced charge transport modeling of GaAs MESFETs," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1867- 1871, 1993. [247] J.S. Melinger, S. Buchner, D. McMorrow, W. J. Stapor, T. R. Weatherford, and A. B. Campbell, "Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2574-2584, 1994. [248] K. Hess, Monte Carlo Device Simulation: Full Band and Beyond, (Kluwer Academic, Boston, 1991). [249] G. A. Sai-Halasz and M. R. Wordeman, "Monte Carlo modeling of the transport of ionizing radiation created carriers in integrated circuits," IEEE Electron Device Lett., vol. 1, no. 10, pp. 211-213, 1980. All references are unclassified II-81 [250] G. A. Sai-Halasz, M. R. Wordeman, and R. H. Dennard, "Alpha-particle-induced soft error rate in VLSI circuits," IEEE Trans. Electron Devices, vol. 29, no. 4, pp. 725-731, 1982. [251] G. A. Sai-Halasz, "Cosmic ray induced soft error rate in VLSI circuits," IEEE Electron Device Lett., vol