era-89] J and V-Models Table 10. Tables of the self-consistent codes used to illustrate this course. 13.2. PARAMETERS We report here the main parameters used for simulations in chapter 4 (MOS) and 10 (MOS/SOI): 13.2.1. PARAMETERS USED IN CHAPTER 4 - The 450 nm (representing a Field-Oxide for field-collapse study). CEA Code: TRAPPOXR v.4 [Lera-99b] Parameters used: Model = J or V; oxide thickness tox = 450 nm; Finite difference; Number of nodes = 101; Not=1 1012 cm2 NTp=4.41016 cm-3 ; pt=1.10-12 cm2 + field dependence [Ning-76]; pr=1.10-12 cm²; Y = 0.1; m =0.9;Ec = 6.5 105 V/cm; 10 cm²/V.s + field dependence; 10-5 cm²/V.s [Srour77b]+field dependence. ISE-CEA Code A: RAD-TRAPPOXTM v.5 Parameters used: Model = V; oxide thickness tox = 450 nm; Finite elements; Not=1. cm-2; NTp=4.410 cm-3 ; pt=1.10-12 cm2 + field dependence [Ning-76]; pr=1.10-12 Y = 0.1; m =0.9;E = 6.5 105 V/cm; Un 10 cm²/V.s + field dependence; 10-5 cm²/V.s [Srour77b]+field dependence. SILVACO Code B Parameters used: Model = J; oxide thickness tox = 450 nm; Finite elements; Not=1. 1012 cm-2: NTp=4.41016 cm 3 ; pt=1.10-12 cm²; pr=0.10-12 cm²; Y = 0.0; Y=exponential saturation; 10-5 cm²/V. - The 300 nm (representing another Field-Oxide for gate bias switching). III-105 CEA Code: TRAPPOXR v.4 [Lera-99b] Parameters used: Model = J; oxide thickness tox = 300 Finite difference; Number of nodes = 101; Not=0.5 10 12 cm-2: NTp=3.31016 cm-3 pt=1.10-12 cm2 + field dependence [Ning-76]; pr=1.10-12cm2; Y = 0.1;m=0.9;Ec = 6.5 105 V/cm; Un= 10 cm2/V.s + field dependence; up=10"cm2/V.s [Srour77b]+field dependence. 13.2.2. PARAMETERS USED IN CHAPTER 10 ISE-CEA Code A: RAD-TRAPPOXTM Parameters used: Model = V; Finite elements; gate length Lg=0.5 um; LDD ; gate oxide thickness tox1 = 10 nm; NTP1=3. 1018 cm-3; uniform density of traps; buried oxide thickness tox2 = 300 nm; NTP2=3. 1018 cm-3: uniform density of traps; for the two oxides: pt=5.10-14 cm2 + field dependence [Ning-76]; pr=5.10-14cm2; Y 0 1.1; m =0.9;Ec = 6.5 10 5 V/cm; Un= 10 cm²/V.s + field dependence; up= 