lement analysis of semiconductor devices: the FIELDAY program," IBM J. Res. Develop., vol. 25, no. 4, pp. 218-231, 1981. [272] E. Takeda, K. Takeuchi, E. Yamasaki, T. Toyabe, K. Ohshima, and K. Itoh, "The scaling law of alpha- particle induced soft errors for VLSI's," IEDM Tech. Dig., pp. 542-545, 1986. [273] D. Hisamoto, T. Toyabe, and E. Takeda, "Alpha-particle-induced source-drain penetration (ALPEN) effects- A new soft error phenomenon," Ext. Abs. Conf. Solid-State Dev. Mat., pp. 39-42, 1987. [274] J. H. Chern, J. T. Maeda, L. A. Arledge, Jr., and P. Yang, "SIERRA: a 3-D device simulator for reliability modeling," IEEE Trans. Computer-Aided Design, vol. 8, no. 5, pp. 516-527, 1989. [275] J. P. Kreskovsky and H. L. Grubin, "Numerical simulation of charge collection in two- and three- dimensional silicon diodes- a comparison," Solid-State Electron., vol. 29, no. 5, pp. 505-518, 1986. [276] A. Yoshii, H. Kitazawa, M. Tomizawa, S. Horiguchi, and T. Sudo, "A three-dimensional analysis of semiconductor devices," IEEE Trans. Electron Devices, vol. 9, no. 2, pp. 184-189, 1982. [277] T. Toyabe, H. Masuda, Y. Aoki, H. Shukuri, and T. Hagiwara, "Three-dimensional device simulator CADDETH with highly-convergent matrix solution algorithms," IEEE Trans. Electron Devices, vol. 32, no. 10, pp. 2038-2043, 1985. [278] W. Fichtner, R. L. Johnston, and D. J. Rose, "Three-dimensional numerical modeling of small-size MOSFETs," IEEE Trans. Electron Devices, vol. 28, no. 10, pp. 1215-1216, 1981. [279] M. R. Pinto, W. M. Coughran, Jr., C. S. Rafferty, R. K. Smith, and E. Sangiori, "Device simulation for silicon ULSI," in Computational Electronics, edited by K. Hess, J. P. Leburton, and U. Ravaioli (Kluwer Academic Publishers, Boston, 1991), pp. 3-13. [280] N. Shigyo and R. Dang, "Analysis of an anomalous subthreshold current in a fully recessed oxide MOSFET using a three-dimensional device simulator," IEEE Trans. Electron Devices, vol. 32, no. 2, pp. 441-445, 1985. [281] Taurus Process/Device User's Manual (Avant! Corporation, TCAD B