echnology. This appears is the key parameter to evaluate the variation of the trapped charge density in the parasitic MOS structures. As test structures are very unpractical, only numerical simulation can help to figure out what is instrumental. Anyway, to feed the codes with data in proper foer, new methods for acquiring parameters have now to be developed. Numerical modeling of interface traps component build-up and bipolar transistor gain degradation is foreseeable, although effective links with the manufacturing process apparently seem more obscure than for the trapped charge. Dose-rate or time-dependent effects are beginning to be implemented, and thus provide help for better understanding of circuit behavior. These conceptual and numerical tools could provide help for technology assessments, ground testing and in-flight predictions. 12. ACKNOWLEDGMENTS Dan Fleetwood, Lew Cohn for encouragement and careful reading. Gérard Barbottin for help in English correction of a large part of this text. The author sincerely wishes to associate Philippe Paillet in co-authorship of large parts of the work concerning, among other topics, analytical solutions and the modeling of detrapping, and co-workers Jean-Luc Autran, Christian Chabrerie, Dominique Hervé, Olivier Flament, Véronique Ferlet-Cavrois and Alphonse Torrès and also Clément Tavernier and Philippe Calvel for their kind participation to the material prepared and exploited. III-104 13. APPENDIX 13.1. SELF-CONSISTENT CODES USED In the following, we report the codes used here, which all share the essential characteristics to compute self consistently the potential, the current and the trapped charge. Only this type of codes can be credibly used for radiation effects modeling in oxides. Origin RAD-TRAPPOX™ ISE-CEA 2D & 3D J and V-Models ATLAS/DGEM/ORCHIDT SILVACO 2D & 3D [Mila-98] J-Model TRAPPOXR [Lera-99b] J and V-Models ACCESS-TRAPPOXR CEA-CEM 2D+detrapping [Pail-98] J-Model ACCESS-TRAPPOX CEA-CEM [Esco-95b, Bris-96] J-Model ASTEC3-TRAPPOX" v.1 and v.0 [Herv-94, L