iodes and Light-Emitting Diodes (LEDs)," Proc. SPIE, Vol. 328, pp. 83-87, 1982. [Aver83] R.S. Averbach, R. Benedek, K.L. Merkle, "Ion-Irradiation Studies of the Damage Function of Copper and Silver," Phys. Rev. B18, pp. 4156-4171, 1978. [Aver88] R.S. Averbach and T. Diaz de la Rubia, "Dynamics and Structure of Energetic Displacement Cascades," Nucl. Instr. Meth. in Phys. Res., Vol. B33, pp. 693-699, 1988. [Bang91] E.K. Banghart, J.P. Lavine, E.A. Trabka, E.T. Nelson, and B.C. Burkey, "A Model for Charge Transfer in Buried-Channel-Charge-Coupled Devices at Low Temperatures," IEEE Trans. Elect. Dev., Vol. 38, No. 5, pp. 1162-1173, 1991. IV-100 (All references are unclassified.) [Barn70] C.E. Barnes, "Effects of Co6 60 Gamma Irradiation on Epitaxial GaAs Laser Diodes," Phys. Rev. B, Vol. 1, No. 12, 1970. [Barn84] C.E. Barnes and J.J. Wiczer, "Radiation Effects in Optoelectronic Devices," Sandia Report SAND-0771, Sandia National Laboratories, May 1984. [Barn86] C.E. Barnes, "The Effects of Radiation on Optoelectronic Devices," Proc. SPIE, Vol. 721, pp. 18-25, 1986. [Barr89] A.L. Barry, R. Wojcik, and A.L. MacDiarmid, "Response of GaAs Displacement Damage Monitors to Protons, Electrons, and Gamma Radiation," IEEE Trans. Nucl. Sci., Vol. 36, No. 6, pp. 2400-2404, 1989. [Barr90] A.L. Barry, R. Maxseiner, R. Wojcik, M.A. Briere, and D. Braunig, "An Improved Displacement Damage Monitor," IEEE Trans. Nucl. Sci., Vol. 37, No. 6, pp. 1726- 1731, 1990. [Barr95] A.L. Barry, A.J. Houdayer, P.F. Hinrichsen, W.G. Letourneau, and J. Vincent, "The Energy Dependence of Lifetime Damage Constants in GaAs LEDs for 1-500 MeV Protons," IEEE Trans. Nucl. Sci., Vol. 42, No. 6, pp. 2104-2107, 1995. [Bert68] M. Bertolotti, "Radiation Effects in Semiconductors," Proceedings of the Santa Fe Conference, edited by F.L. Vook, Plenum Press, NY, p. 311, 1968. [Burk86] E.A. Burke, "Energy Dependence of Proton-Induced Displacement Damage in Silicon," IEEE Trans. Nucl. Sci., Vol. 33, No. 6, pp. 1276-1281, 1986. [Burk91] B. Burke and S.A. Gajar, "Dynam