m-Learning EUROPEAN UNION Education and Culture "VIRTUAL ELECTRO LAB" SIEMENS Leonardo da Vinci VELAB for Mini vlab. unitbv.ro "ROMANIA. N- IFET Dr ain Voltage UNIVERSITATEA N- FFT Multiple Drain Voltages P-MOS-FET Drain Voltage P-MOS-FET Multiple 18:17 transitionia BRASOV REMOTE & MOBILE (!) Measurement of Electron Devices-REAL (!) & Emulated 2 abc N-JFET Drain Voltage N-JFET Multiple Drain Voltages P-MOS-FET Drain Voltage 8 tuv P-MOS-FET Multiple Drain Voltages BIT Base and Collector Voltages Diodes Current and Voltages Figure 12.15 (a) Main page of the mini-version of "Virtual Electro-Lab" Web site; (b) Spectacular small-screen rendering on Siemens C65. improving the HTML site) we choose the last one, which is the most practical: we rearranged the content in a single column; we limited the graphical content (to improve page loading time and reduce the scrolling necessary to view the entire content)-on the other side, there is no more effort needed to prepare all figures in WBMP (WAP bit-map) format-that would create restrictions to "backward" access via normal browsers; we used hyperlinks instead of great images or icons; we limited text and icons' size (to be consistent with terminals' standard font sizes) and SO on. It was accomplished [39] "mini" version of the Web site-see Figure 12.15. The "mini" version of the "Virtual Electro-Lab" Web site: The following figures illustrate the Web site we adapted for real and virtual experiments that can be Service Delivery Platforms performed not only remotely but also mobile (for m-Learning in technical domain) published at http://vlab.unitbv.ro/velab/mini-index.html. Figure 12.16 presents the results' page of a complete N-JFET measurement. To check saturation, one could easily increase U2 (e.g., a step of 1 V, from 9 to 10 V) and notice, in the new results' screen that drain potential, VD, increased by the same step (up to approx. 7.6 V). This confirms that voltage on the serial resistor R = 5.6 kO remained unchanged then the transistor is saturated. 12.2.2.2 Accompl