5, no. 6, pp. 2500-2508, 1998. All references are unclassified II-79 [209] F. W. Sexton, D. M. Fleetwood, M. R. Shaneyfelt, P. E. Dodd, G. L. Hash, L. P. Schanwald, R. A. Loemker, K. S. Krisch, M. L. Green, B. E. Weir, and P. J. Silverman, "Precursor ion damage and angular dependence of single event gate rupture in thin oxides," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2509- 2518, 1998. [210] B. E. Weir, P. J. Silverman, D. Monroe, K. S. Krisch, M. A. Alam, G. B. Alers, T. W. Sorsch, G. L. Timp, F. Baumann, C. T. Liu, Y. Ma, and D. Hwang, "Ultra-thin gate dielectrics: They break down, but do they fail?" IEDM Tech. Dig., pp. 73-76, 1997. [211] T. F. Wrobel, "On heavy ion induced hard-errors in dielectric structures," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1262-1268, 1987. [212] A. W. Waskiewicz, J. W. Groninger, V. H. Strahan, and D. M. Long, "Burnout of power MOS transistors with heavy ions of Californium-252," IEEE Trans. Nucl. Sci., vol. 33, no. 6, pp. 1710-1713, 1986. [213] J. L. Titus, G. H. Johnson, R. D. Schrimpf, and K. F. Galloway, "Single-event burnout of power bipolar junction transistors," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1315-1322, 1991. [214] D. L. Oberg, J. L. Wert, E. Normand, P. P. Majewski, and S. A. Wender, "First observations of power MOSFET burnout with high energy neutrons," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2913-2920, 1996. [215] J. W. Adolphsen, J. L. Barth, and G. B. Gee, "First observation of proton induced power MOSFET burnout in space: The CRUX experiment on APEX," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2921-2926, 1996. [216] S. Kuboyama, K. Sugimoto, S. Shugyo, S. Matsuda, and T. Hirao, "Single-event burnout of epitaxial bipolar transistors," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2527-2533, 1998. [217] D. L. Oberg and J. L. Wert, "First nondestructive measurements of power MOSFET single event burnout cross sections," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1736-1744, 1987. [218] S. Kuboyama, S. Matsuda, T. Kanno, and T. Ishii, "Mechanism for 