sieh, K. A. Tallman, R. M. Martino, D. Fitzpatrick, D. A. Badami, M. Hakey, S. F. Chu, B. Davari, and G. G. Shahidi, 0.25 um CMOS SOI technology and its application to 4 Mb SRAM," IEDM Tech. Dig., pp. 587-590, 1997. [326] R. Chau, R. Arghavani, M. Alavi, D. Douglas, J. Greason, R. Green, S. Tyagi, J. Xu, P. Packan, S. Yu, and C. Liang, "Scalability of partially depleted SOI technology for sub-0.25 um logic applications," IEDM Tech. Dig., pp. 591-594, 1997. All references are unclassified II-85 1999 IEEE NSREC IEEE Nuclear and Space Radiation Effects Conference Short Course TOTAL DOSE EFFECTS: MODELING FOR PRESENT AND FUTURE Jean-Luc Leray CEA/DAM Ile-de-France Approved for public release; diffusion is unlimited 1998 IEEE NSREC Short Course TOTAL DOSE EFFECTS: MODELING FOR PRESENT AND FUTURE Jean-Luc Leray CEA/DAM Ile-de-France B.P. 12, F-91680 Bruyeres-Le-Châtel, France COURSE DESCRIPTION CONTEXT: TOTAL-DOSE ENVIRONMENT IN SPACE Recalling the order of magnitude of radiation in space The orbits and example of mission dose profiles The interactions: permanent effects of the cumulated dose 2.3.1. Interactions and track radii. Uniform or dispersed dose? 2.3.2. Equivalence between fluxes and dose rates Radiative environments and simulation of these environments Hardening VS. Shielding? Trade-offs between weight and cost Example at the component level: LEO satellites ANALYTICAL MODELING OF TRAPPING EFFECTS IN MOS TRANSISTORS Consequences for transistors and circuits The basic picture for hole and electron trapping Charge contained in the insulator and threshold voltage shift of MOS transistor Positive and negative trapped charge: present understanding First step: creation and separation of electron-hole pairs in SiO2 Second step: motion of the holes 3.6.1. Basic observations 3.6.2. Interpretation 3.6.3. Modeling of the early regime of motion and the self trapping of holes Third step: towards permanent trapping of charge 3.7.1. Modeling the trapping 3.7.2. Equations relative to carriers 3.7.3. Equations relative to trap