ation as Equation 12.3 Inter (12.3) where, n(t) is the carrier density, T is the carrier lifetime and g(t)is the photocarrier generation-rate. The optical source is considered as a Gaussian laser beam. The carrier-generation rate by the laser in a PCA is given in Equation 12.4 (12.4) where, n is the quantum efficiency, P(t) is the optical power, W0 is the beam waist radius, h is Planck's constant Vopt is the laser frequency, V is the active volume. The quantum efficiency N, the generation of photocarriers inside the semiconductor, can be defined as in Equation 12.5 Where, Rcoeff is the power reflection coefficient, a is the optical absorption coefficient, TLT-GaAs is the skin depth. The optical power within the laser beam having pulse dur- ation (T) and beam waist radius (@0) is described in Equation 12.6 (12.6) where, P is the optical peak power. The average carrier density can be calculated using Equation 12.7 5G Wireless Communication System in Healthcare Informatics (12.7) In dipole PCA, the total area where the carriers are generated is given as, area, A = LW and the active volume is given as, volume, V a = Ld Where, L and W are the length and width of the active area respectively. While adding interdigitated fingers in the active area at the bare gap of dipole PCA, the carriers are generated in the gap between the fingers. The area of the interdigitated gap should be considered in the calculation of the IPCA structure. To know about the conduction of current across the antenna gap, the conductance can be evaluated as given in Equation 12.8 [Prajapati et al. (2017)] (12.8) where, n(t) is the carrier density, is the mobility of electrons, q is the charge of an electron. Due to the polarization of charges, the screening effect arises, which should be reduced to increase the THz photocurrent [El-Ghazaly, Joshi, & Grondin (1990)]. The V (t) can be calculated using the radiated voltage and the screening voltage and it is written as Equation 12.9 (12.9) where, V(t) is the gap capacitance voltage, Vbias(t) is the a