, no. 5, pp. 1184-1190, 1992. T. C. May and M. H. Woods, "A new physical mechanism for soft errors in dynamic memories," Proc. IEEE Int. Reliability Phys. Symp., pp. 33-40, 1978. T. C. May and M. H. Woods, "Alpha-particle-induced soft errors in dynamic memories," IEEE Trans. Electron Devices, vol. 26, no. 1, pp. 2-9, 1979. L. W. Massengill, "Cosmic and terrestrial single-event radiation effects in dynamic random access memories," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 576-593, 1996. All references are unclassified II-72 D. C. Shaw, G. M. Swift, and A. H. Johnston, "Radiation evaluation of an advanced 64Mb 3.3V DRAM and insights into the effects of scaling on radiation hardness," IEEE Trans. Nucl. Sci., vol. 42, no. 6, pp. 1674-1680, 1995. T. Matsukawa, S. Mori, T. Tanii, T. Arimura, M. Koh, K. Igarashi, T. Sugimoto, and I. Ohdomari, "Evaluation of soft-error hardness of DRAMs under quasi-heavy ion irradiation using He single ion microprobe technique," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2849-2855, 1996. K. A. LaBel, M. M. Gates, A. K. Moran, H. S. Kim, C. M. Seidleck, P. Marshall, J. Kinnison, and B. Carkhuff, "Radiation effect characterization and test methods of single-chip and multi-chip stacked 16Mbit DRAMs," IEEE Trans. Nucl. Sci., vol. 43, no. 6, pp. 2974-2981, 1996. C.I Lee, D. N. Nguyen, and A. H. Johnston, "Total ionizing dose effects on 64Mb 3.3V DRAMs," IEEE NSREC Data Workshop Record, pp. 97-100, 1997. R. Harboe-Sorensen, M. Brüggemann, R. Müller, and F. J. Rombeck, "Radiation evaluation of 3.3 volt 16 M-bit DRAMs for solid state mass memory space applications," IEEE NSREC Data Workshop Record, pp. 74-79, 1998. K. A. LaBel, P. W. Marshall, J. L. Barth, R. B. Katz, R. A. Reed, H. W. Leidecker, H. S. Kim, and C. J. Marshall, "Anatomy of an in-flight anomaly: investigation of proton-induced SEE test results for stacked IBM DRAMs," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2898-2903, 1998. J.-H. Chern, P. Yang, P. Pattnaik, and J. Seitchik, "Alpha-particle-induced charge transfer between cl