typical device with 50 um3 pixel volumes, this corresponds to less than one radiation induced defect every ten pixels, which can easily be exceeded during a typical space mission [Hopk96]. If a signal charge is trapped by a proton induced defect, and remains trapped for more than one clock cycle, it will be lost from the signal charge packet. The trapped charge is eventually re-emitted into trailing pixels, and produces a smeared image. It is the interplay between the temperature dependent carrier emission and capture dynamics of the radiation induced traps and the device readout scheme and clocking rates that determine the CTE behavior of an irradiated CCD [Mohs74]. To understand this interplay, we consider the readout procedure for a 2- dimensional CCD array. Signal charge packets are stored in the depletion regions formed underneath a biased gate during the integration period. Since the gate voltage determines the potential well capacity underneath, the signal charge can be moved down the rows in the buried channel by the appropriate sequencing of the gate voltages as indicated in figure 14a. The charge is confined laterally to a single row by an implanted channel stop. After each "parallel" transfer of the charge from one pixel to the next, the charge packet is clocked out of the serial register as depicted in figure 14b, and the whole process repeated until the imager readout is complete. Unfortunately, the time to read out the serial register is long enough for signal charge to be trapped. The signal charge can subsequently be re-emitted into a trailing pixel thereby degrading the CTE. Since the carrier emission times depend exponentially on temperature, the CTE response of a 2- dimensional CCD array is a strongly temperature dependent. In contrast to the typical area array, the linear CCD with clocking speeds at 1 MHz or more is relatively immune to proton induced CTE degradation. This is because the capture times for key radiation induced defect levels, such as the E-center, are too long relative to the c