ng 6.2.1. Manufacturing process of the thermal oxide 6.2.2. Gate oxide thickness downscaling Empirical Process engineering curves for the thermal gate oxide and modeling 6.3.1. Correlations concerning oxidations and anneals 6.3.2. Furnace Anneals and Rapid Anneals (RTA) Some theories about the process engineering empirical curves 6.4.1. Interpretation by the flow of SiO2 6.4.2. Interpretation in term of exo-diffusion of oxygen INTERFACE STATES Consequences of interface state build-up for VTN and III-2 Consequence for mobility reduction in silicon Interface state build-up BIPOLAR TRANSISTORS LEAKAGE CURRENTS: VISIBLE AND HIDDEN TRANSISTORS Edge field oxides (E-FOX) modeling 9.1.1. Lateral thick oxides: LOCOS type 9.1.2. Example of consequences of leakage for circuits 9.1.3. Conceptual modeling of edge transistors and experiments 9.1.4. Numerical modeling of edge leakage transistors 9.1.5. Trends of supply voltage during irradiation 9.1.6. Other types of edge oxides Planar isolation oxides (P-FOX) The case of leakage in bipolar technologies Consequences of leakage currents for CMOS circuits and perspectives linked to progress of the integration SOI TECHNOLOGIES 10.1. Principles of SOI technologies 10.2. The three types of SOI technologies 10.3. Parasitics in a thin-film SOI technology 10.4. Modeling the trapped charge in SOI devices CONCLUSIONS: TRENDS, MODELING, AND NEW ISSUES ACKNOWLEDGMENTS 13. APPENDIX 13.1. Self-consistent codes used 13.2. Parameters 13.2.1. Parameters used in chapter 4 13.2.2. Parameters used in chapter 10 14. REFERENCES III-3 1. COURSE DESCRIPTION Knowing the dose only is insufficient to assess the actual impact of ionizing radiation on electronic components. Due to annealing, reverse-annealing effects, all affected by voltage bias, dose-rate and operation during mission profile is also of utmost importance. A lot of work has been done in the last 40 years, with the vast majority having been published in IEEE Transactions. A lot of models, data, perspectives have been compiled in NSREC Short