obile phone, still cannot be integrated. A handset's call quality, signal receiving ability and battery life are all affected by PA. Generally speaking, once a handset manufacturer chooses a PA supplier, it is almost impossible for the manufacture to change the supplier. In the early handsets Silicon LDMOS (laterally diffused metal oxide semiconductor) and GaAs (Gallium Arsenide) MESFET (Metal Semiconductor Field Effect Transistor) were extensively used but now GaAs HBT (heterojunction bipolar transistor) are commonly found in power amplifiers. GaAs PHEMT (pseudomorphic high electron mobility transistor) can also be found in power amplifiers [9]. Considerable R&D is taking place on RF CMOS based PAs, with the lure of ever lower cost and the potential of further integration. The challenge with CMOS is the low breakdown voltage and several approaches have been taken to address the issue. One of them is the incorporation of dc-dc converters to allow the supply voltage to be reduced at lower output powers. Some CMOS PAs have been demonstrated, and have made use of specialized processes and innovative circuit approaches [10] but the cost of CMOS is still the prohibitive factor 11]. Gallium Arsenide HBT/PHEMT is still the process of choice for the power amplifier, which requires high current drive and very linear characteristics (not feasible with CMOS). 10.4.2 Baseband Processor (BP) In simple terms, baseband processors are mainly used in a mobile phone to process communication functions (related to radio). Baseband Processors manage connectivity to the mobile network below the IP layer. In wireless systems, the logic chip processes the data signal before it is demodulated or modulated to a high-frequency signal called Baseband IC. Baseband processors consist of a DSP (Digital Signal Processor) core, CPU (Central Processing Unit) core, RTOS (Real-time Operating System) and network protocols. Qualcomm dominates the baseband chip market while Texas Instruments and STMicroelectronics hold no. 2 and 3 positions respective