g compound. Flip chip is a method for interconnecting semiconductor devices to external circuitry with solder bumps that have been deposited onto the chip pads. The solder bumps are deposited on the chip pads on the top side of the wafer during the final wafer processing step. In order to mount the chip to external circuitry, it is flipped over SO that its top side faces down and aligned SO that its pads align with matching pads on the external cir- cuit, and then the solder is reflowed to complete the interconnect. This is in contrast to wire bonding, in which the chip is mounted upright and wires are used to interconnect the chip pads to external circuitry. An RDL is an extra metal layer on a chip that makes the I/O pads of an integrated circuit available in other locations. When an integrated circuit is manufactured, it usually has a set of I/O pads that are wire-bonded to the pins of the package. TEV technology is an interconnect technology process. TSV technology is interconnect technology process. New Radio Access RF and Transceiver Design Considerations Silicon transistors cannot compete with III-V compounds (GaAs, InP, GaN) for low-noise performance, linearity, and output power at frequencies above 20 GHz. A GaAs mmWave LNA yields an average NF of 2.5 dB, which is much lower than state-of-the art SiGe LNA of 5 dB. The output power levels (Psat) of over 30 dBm can be achieved with GaAs in E-Band, while SiGe-HBTs can reach 19 dBm (Psat) [23]. Silicon RFICs allow the integration of multiple application-specific functionalities on a single silicon chip (RF application-specific integrated circuit or ASIC) with excellent yield and uni- formity plus the possibility to integrate different calibration schemes to mitigate RF impair- ments, which are not possible or more complex to implement in GaAs. The level of integration is a factor to be considered. A high level of integration makes the chip very spe- cific and could increase development time in a first design but reduces production test and simplifies module a