 E.W. Enlow, R.L. Pease, W.E. Combs and D.G. Platteter, "Total dose induced hole trapping in trench NS-36, 6, 2415 (1989). [Esco-95a] R. Escoffier, "Simulation numérique de l'effet des charges induites par l'irradiation dans les oxydes des structures MOS", Thèse de doctorat en Sciences Physiques, Université de Montpellier II, France, Sept. 29th ,1995, (available in microfiche at ANRT/University of Grenoble-II). [Esco-95b] R. Escoffier, A. Michez, C. Cirba, G. Bordure, P. Paillet, V. Ferlet-Cavrois and J.L. Leray, "Radiation induced shift study in parasitic MOS structures by 2D numerical simulation", 3nd European Conference on Radiation and their Effects on Devices and Systems (RADECS-95), IEEE 95TH8147. [Euro-92] J.L. Leray, Training Course ME-10 "Electromagnetic and radiation Effects on Electronics", Lecture 07 available in video and hard copy at EUROPACE (EUROPean Advanced Continuing Education), Paris La Défense (92), France. [Farm-73] J. Farmer, "X-ray induced currents and space-charge build-up in MOS capacitor", PhD Thesis, Kansas State University, 74-25/599 (1974) (available in microfiche at Xerox University Microfilms, Ann Arbor, Michigan). [Ferl-96] V. Ferlet-Cavrois, O. Musseau, J. L. Leray, J. L. Pelloie, C. Raynaud, "Total dose effects on short channel NMOS/SOI transistors and its lateral transistor", IEEE Trans. Electron Devices., ED-44, 6, 965 (1996) and 3nd European Conference on Radiation and their Effects on Devices and Systems (RADECS- 95), IEEE 95TH8147, p. 142 (1995). [Ferl-98] V. Ferlet-Cavrois, O. Musseau, O. Flament, J. L. Leray, J. L. Pelloie, C. Raynaud and O. Faynot, "Total dose induced latch in short channel NMOS/SOI transistors", IEEE Trans. Nucl. Sci., NS-45, 6, 2458 (1992). [Ferr] D.K. Ferry, "Semiconductors", p. 323, Maxwell MacMillan Engineering Editions. [Flam-92] O. Flament, D. Hervé, O. Musseau, Ph. Bonnel, M. Raffaelli, J.L. Leray, J. Margail, B. Giffard, A.J. Auberton-Hervé, "Field dependent charge trapping effects in SIMOX buried oxides at very high ,NS-39, 6, 2132 (1992). [Fla