ilter34 on semiconductor substrate, uses the semiconductor manufacturing process, and constitutes a filter structure with high-Q factor and low-loss characteristics, as well as good performance in mmWave bands. However, regardless of whether it is using GaAs sub- strate or silicon substrate, the cost is relatively high. Under the conditions of ensuring a high degree of consistency, mass production is still more difficult [26]. As for the nmWave LNAs, GaAs pHEMT has excellent noise and linearity performance. Due to its high insulation rate, GaAs substrate improves chip inductor quality factor (Q), which helps reduce the overall NF of the terminal's receiver. While GaAs pHEMT has excellent noise and gain performance, it has not been widely used in the early years due to A SAW filter is a filter whereby the electrical input signal is converted to an acoustic wave by inter-digital transducers (IDTs) on a piezoelectric substrate such as quartz. The IDTs consist of interleaved metal electro- des which are used to launch and receive the waves, SO that an electrical signal is converted to an acoustic wave and then back to an electrical signal. The most common group of SAW filters are bandpass filters, which are in very widespread use in radio systems. There are many types with differing advantages, such as low shape factor, low insertion loss, small size, or high-frequency operation. The wide variety of types is possible because almost arbitrary shapes can be defined on the surface with very high precision. SAW filters are limited to frequencies from about 50 MHz up to 3 GHz. Unlike SAW filters, the acoustic wave in a BAW filter propagates vertically. In a BAW resonator using a quartz crystal as the substrate, metal patches on the top and bottom sides of the quartz excite the acoustic waves, which bounce from the top to the bottom surface to form a standing acoustic wave. The frequency at which resonance occurs is determined by the thickness of the slab and the mass of the electrodes. At the high frequencies in which BAW