itivity -16dBm -25 dBm -25 dBm Electrical Maximum dissipated power 3.5 W Mechanical-Requirements Operating temperature 10°C-70°C 0°C-70°C 10°C-70°C Technology for Telecommunications: Integrated Optics and Microelectronics The input-output of the 10 Gbit/s channel is performed through the XFI parallel stan- dard. This choice has been made to comply with the maximum possible number of system card design. In Table 5.12 the main characteristics of three different DWDM XFPs are summarized. References 1. Numai, T., Fundamentals of Semiconductor Lasers, Springer, New York, s.l., 2010, ISBN-13: 978-1441923516. 2. Tsidilkovskii, I. M., Band Structure of Semiconductors, Pergamon Press, Oxford, NY, s.l., 1982, ISBN-13: 978-0080216577. 3. Loudon, R., The Quantum Theory of Light, 3rd Edn., Oxford Science Publications, New York, s.l., 2000, ISBN 0198501765. 4. Vahala, K., Yariv, A., Semiclassical theory of noise in semiconductor lasers: Part II, Journal of Quantum Electronics, 19(6), 1102-1109 (1983). Vey, J. L., Gallion, P., Semiclassical model of semiconductor laser noise and amplitude noise squeezing-Part I: Description and application to Fabry-Perot laser, IEEE Journal of Quantum Electronics, 33(11), 2097-2104 (1997). Hui, R., Mecozzi, A., D'Ottavi, A., Spano, P., Novel measurement technique of alpha factor in DFB semiconductor lasers by injection locking, Electronics Letters, 26(14), 997-998 (1990). 7. Travagnin, M., Intensity and phase noise spectra in semiconductor lasers: A parallelism between the noise enhancing effect of pump blocking and nonlinear dispersion, Journal of Optics B: Quantum Semiclassical Optics, 2, L25-L29 (2000). 8. Piazzolla, S., Spano, P., Tamburrini, M., Characterization of phase noise in semiconductor lasers, Applied Physics Letters, 41(8), 695-696 (1982). 9. Mecozzi, A., Piazzolla, S., Sapia, A., Spano, P., Non-Gaussian statistics of frequency fluctuations in line-narrowed semiconductor lasers, IEEE Journal of Quantum Electronics, 24(10), 1985-1988 (1988). Aragon Photonics Application Note. Chara