planned 5G NR spectrum. The table further shows the mapping between those applications and the technologies needed to implement power amplifiers, low-noise amplifiers, RF switches, RF filters, and integrated antennas to enable 5G transceivers to be implemented. One important conclusion is that the entire new spec- trum for 5G NR, whether sub-6 GHz or greater than 6 GHz, is mainly TDD bands; thus fre- quency duplexers are not required in order to implement a front-end solution. Filtering, as needed, is accomplished using band-pass filters. In the 3-6 GHz region, filtering can be accomplished using acoustic, integrated passive devices (IPDs)28 or ceramic technologies. IPDs or integrated passive components are attracting an increasing interest due to constant needs of handheld wireless devices to further decrease in size and cost and increase in functionality. Many functional blocks such as impedance matching circuits, harmonic filters, couplers and RF baluns, and power combiner/divider can be realized by IPDs technology. IPDs are generally fabricated using standard wafer fabrication technolo- gies such as thin film and photolithography processing. IPDs can be designed as flip chip mountable or wire bondable components and the substrates for IPDs usually are thin film substrates like silicon, alumina or glass. Introduction and Background For the 5G mmWave fixed wireless applications, requirements for massive MIMO and beamforming mean that transmit and receive functions will most likely be in distributed array formats. As a result, there will be multiple transmit/receive chains to accomplish transceiver functionality for fixed/mobile wireless devices. Filter technology for mmWave 5G is likely to be based on transmission line and waveguide cavity technology. micro-elec- tromechanical systems cavity resonators are also an attractive choice to avoid manual- tuning filters and leveraging silicon wafer-based manufacturing approaches. Multi-pole fil- ters suitable for operation in frequencies of 20-100 GHz have been demons