n test issues Suspect a sensitivity to direct ionization induced SEEs from protons (e.g., optocouplers) Need to assess sensitivity to destructive failure (e.g., latch-up) from protons 2. Expect proton displacement damage and have no satisfactory means of predicting response without test data. Have no displacement damage data on part type and need to characterize for a proton rich environment Need to verify response on flight-lot devices where lot-to-lot variations can be large (e.g., COTS) Have neutron data and correlation approaches indicate "marginal" performance Need to measure a "damage function" energy dependence to reduce uncertainty associated with predictive tools Mixed damage and TID from protons in application indicates need for proton tests 3. Need to assess TID response to proton-induced dose with high precision (e.g., calibration of p-MOS dosimeters) Following the major division indicated in the above list, the subject material for this section of the course is divided into two segments with Part A devoted to ionization effects and Part B to displacement damage effects. The section on ionization effects addresses the environment and satellite configuration considerations to identify scenarios where proton dose can play an important role in TID effects. Proton-induced single event effects occurring from either direct ionization or generation of reaction recoils will be included in this section, but the emphasis will be on more recent studies describing new sensitivities to proton-induced ionization events. The reader will be referred to previous Short Course notes and related literature for discussions of mechanisms and rate calculations for "traditional" proton SEE and TID concerns, with the exception of two case studies. These two studies examine special concerns for modern communications satellite constellations that route high-speed signals. The section on displacement damage considers the numerous device types exhibiting sensitivity to displacement effects. The primary tools, like the concept of 