ic Suppression of Interface-State Dark Current in Buried Channel CCD Imagers," IEEE Elect. Dev. Lett., Vol. 38, No. 2, pp. 285-290, 1991. [Buch95] F. Buchinger, A. Kyle, J.K.P. Lee, C. Webb, and H. Dautet, "Identification of Individual Bistable Defects in Avalanche Photodiodes," Appl. Phys. Lett., Vol. 66, No. 18, pp. 2367-2369, 1995. [Carb93] J. Carbone, J. Zamowski, F. Arnold, and J. Hutton, "New Low-Noise Random Access, Radiation Resistant and Large Format Charge Injection Device (CID) Imagers," Proc. SPIE, Vol. 1900, pp. 170-180, 1994. [Cart66] J.R. Carter, "Effect of Electron Energy on Defect Introduction in Silicon," J. Phys. Chem. Solids, Vol. 27, pp. 913-918, 1966. [Dai96] M. Dai, F. Buchinger, J.K.P. Lee, and H. Dautet, "Time Resolved Annealing Studies of Single Neutron Irradiated Avalanche Photodiodes," IEEE Trans. Nucl. Sci., Vol. 44, No. 6, pp. 2595-2600, 1996. [Dale88] C.J. Dale, P.W. Marshall, E.A. Burke, G.P. Summers, and E.A. Wolicki, "High Energy Electron Induced Displacement Damage in Silicon," IEEE Trans. Nucl. Sci., NS-35, pp. 1208-1214, 1988. IV-101 (All references are unclassified.) [Dale89a] C.J. Dale, P.W. Marshall, G.P. Summers, E.A. Wolicki, and E.A. Burke, "Displacement Damage Equivalent to Dose in Silicon Devices," Appl. Phys. Lett., Vol. 54, No. 5, p. 451, 1988. [Dale89b] C.J. Dale, P.W. Marshall, E.A. Burke, G.P. Summers, and G.E. Bender, "The Generation Lifetime Damage Constant and its Variance," IEEE Trans. Nucl. Sci., Vol. 36, No. 6, pp. 1872-1881, 1989. [Dale90] C.J. Dale, P.W. Marshall, and E.A. Burke, "Particle-Induced Spatial Dark Current Fluctuations in Focal Plane Arrays," IEEE Trans. Nucl. Sci., Vol. 37, No. 6, pp. 1784-1793, 1990. [Dale91] C.J. Dale and P.W. Marshall, "Displacement Damage in Silicon Imagers for Space Applications," Proc. SPIE, Vol. 1447, pp. 70-86, 1991. [Dale92a] C.J. Dale and P.W. Marshall, "Radiation Response of 1300 nm Optoelectronic Components in a Natural Space Radiation Environment," Proc. SPIE, Vol. 1791, pp. 224-232, 1992. [Dale92b] C.J. Dale, P.W