-10V Temperature (C) Figure 52. Simulated (dotted line) VS experimental (solid line) TSC on a 45 nm hard oxide MOS capacitor (TSC bias -10V), irradiated to 1 Mrad(SiO2) (irradiation bias +5V) [Pail-98]. The result is compared to experimental data from [Flee-92c]. The variations of experimental (solid line) and simulated (dotted line) ITSC are plotted in fig. 52 as a function of temperature. A very good agreement is obtained with experimental results as a function of temperature, despite the fact that no attempt has been made to modify the default values of the parameters given previously. The simulation has been then taken one step further, to see if the evolution of charge trapping with total dose in this oxide could be fitted as well. To this purpose, TSC simulations have been carried out at different irradiation doses, and the total TSC charge (i.e. integration of ITsc(t)) has been calculated at each dose level. The results of the dose dependence of this total TSC charge are shown in fig. 53. Once again, a very good agreement is obtained between simulation results and experimental data. Under the assumptions of the thermal detrapping model, this method can be straightforwardly applied to the calculation of the oxide charge release and threshold voltage recovery. III-66 Irradiation +5V TSC bias -10V Simulation Experiment Dose [Mrad(SiO2)] Figure 53. Simulated TSC charge on a 45 nm hard oxide MOS capacitor (TSC bias -10V), as a function of total dose [Pail-98]. B. Thick oxide We have also simulated a MOS capacitor structure having a 350 nm thick thermal oxide, representing a Field Oxide (see chapter 9). This thick soft oxide has a different radiation response than the thin hard oxide of the previous section. This difference is accounted for by means of a different trap energy distribution. This energy distribution was taken from experimental data [Pail-95c], [Pail-98], and is shown in fig. 54. Soft oxide 350 nm Energy (eV) Figure 54. Energy distribution and discretization used for 350 nm thick soft oxides [Flee-