e environment, models, and effects on devices; the primary focus is on single event upset and transient effects, and fault tolerance techniques for mitigating their impact to system operations. I want to personally thank the five Short Course authors, Paul Dodd, Jean-Luc Leray, Paul Marshall, Cheryl Marshall, and Bill Heidergott for their efforts in preparing this Short Course. It is the diligence and expertise of the authors that has continued the tradition of excellence in NSREC Short Courses through the years, and that makes it a highlight of the conference week and a resource for the remainder of the year. This year, we are especially pleased that this tradition has been recognized with a CD-ROM that contains previous NSREC Short Courses from 1980-1998, provided to each course registrant. We thank the Radiation Effects Steering Group (especially Dale Platteter) and the 1999 NSREC Conference Committee for making this possible. I also thank Lew Cohn for his efforts in reviewing the Short Course and ensuring that the notes were printed on schedule, and the DTRA printing office for printing the notebooks. Daniel M. Fleetwood Albuquerque, New Mexico Biographies Daniel M. Fleetwood Short Course Organizer Sandia National Laboratories Daniel M. Fleetwood received his B. S. in Physics and Applied Mathematics from Purdue University in 1980, and his M. S. and Ph. D. degrees in Physics from Purdue in 1981 and 1984. He is a Distinguished Member of the Technical Staff in the Radiation Technology and Assurance Department at Sandia National Laboratories. He has been active in field of radiation effects in microelectronics since joining Sandia in 1984, is the author or co-author of more than 175 publications, and holds two patents. In 1997 and 1998 he received R&D 100, Industry Week, and Discover Magazine awards for co-invention of a nonvolatile memory based on hydrogen-annealed SiO2. Dr. Fleetwood has served the radiation effects community as a guest editor of the December 1988-1990 and April 1996 special issues of the IEEE 