 for hardening MOS devices and circuits for low radiation doses", IEEE Trans. Nucl. Sci., NS-27, 6, 1739 (Dec. 1980). [McLe-80] F.B. McLean "A framework for understanding radiation-induced interface states in MOS structures", All references are unclassified III-110 IEEE Nuc.Sci. NS-27, 6, 1651 (1980). [McLe-87] F.B. McLean, "Basic Mechanisms of Radiation Effects on Electronic Materials, Devices and Integrated Creuits", 1987 IEEE NSREC Short Course. [McWh-86] P.J. McWhorter and P.S. Winokur, "Simple technique for separating the effects of interface traps and trapped-oxide charge in Metal-Oxide-Semiconductor transistors", Appl. Phys. Lett. 48, 133 (1986). [McWh-88] P.J. McWhorter, P.S. Winokur, and R.A. Pastorek, "Donor/acceptor nature of radiation-induced interface traps", IEEE Trans. Nucl. Sci., NS-35, 6, 1154 (1988). [McWh-90] P.J. McWhorter, S. L. Miller, and W. M. Miller, "Modeling the anneal of radiation-induced trapped holes in a varying thermal environment", IEEE Nucl. Sci. NS-37, 6, 1682 (1990). [Mess-92] G.C. Messenger and M.S. Ash, "The Effects of Radiations on Electronic Systems", van Nostrand Rheinhold, ISBN 0-442-2359-1 (2nd Ed., 1992), p. 334, ISBN 0-442-25417-2. [Mila-98] R.J. Milanowski, M.P. Pagey, L.W. Massengill, R.D. Schrimpf, M.E. Wood, B.W. Offord, R.J. Graves, K.F. Galloway, C.J. Nicklaw and E.P. Kelley, "TCAD-assisted analysis of back-channel leakage in irradiated Mesa SOI NMOSFETS', IEEE Trans. Nucl. Sci., NS-45, 6, 2593 (1998). [Mitc-67] J.P. Mitchell and D.K. Wilson, "Surface effects of radiation on semiconductor devices", The Bell System Technical Journal, Vol. XLVI, n°1, pp. 1-80 (Jan. 1967). [Mott-77] N.F. Mott, A.M. Stoneham, "The lifetime of electrons, holes and excitons before self-trapping", J. Pys. Chem. Solid State Physics, 10, 3391 (1977). [Mrst-91] B.J. Mrstik, R.W. Rendell, "Si-SiO2 interface-state generation during x-ray irradiation and during post-irradiation exposure to a hydrogen ambient", IEEE Trans. Nucl. Sci., NS-38, 6, 1101 (1990). [Ning-76] T.H. Ning, "High-field cap