-103 (All references are unclassified.) [Hopk96] G.R. Hopkinson, C.J. Dale, and P.W. Marshall, "Proton Effects in Charge-Coupled Devices," IEEE Trans. Nucl. Sci., Vol. 43, No. 2, pp. 614-627, 1996. [Hopk97] G.R. Hopkinson, "Radiation Effects in Optoelectronic Components," 4th European Conference on Radiations and their Effects on Components and Systems (RADECS 97) Journal of Technical Events, pp. III 65-101, Cannes, France, 1977. [Jane95] J. Janesick, T. Elliott, R. Winzenread, J. Pinter, and R. Dyck, "Sandbox CCDs," Proc. SPIE, Vol. 2415, pp. 2-42, 1995. [John87] A.H. Johnston and R.E. Plaag, "Models for Total Dose Degradation of Linear Integrated Circuits," IEEE Trans. Nucl. Sci., Vol. 34, No. 6, pp. 1474-1480, 1987. {Note that this paper also treats displacement damage.} [John99] A. H. Johnston and B.G. Rax, "Proton Damage in Linear and Digital Optocouplers," to be presented at RADECS99 and published in the proceedings. [Keav93] C.J. Keavney, R.J. Walters and P.J. Drevinsky, "Optimizing the Radiation Resistance of InP Solar Cells: Effect of Dopant Density and Cell Thickness," J. Appl. Phys., Vol. 73, pp. 60-70, 1993. [Khan96] S.M. Khanna, H.C. Liu, P.H. Wilson, L. Li, and M. Buchanan, "High Energy Proton and Alpha Radiation Effects on GaAs/AlGaAs Quantum Well Infrared Photodetectors," IEEE Trans. Nucl. Sci., Vol. 43, No. 6, pp. 3012-3018, 1996. [Kim79] L.C. Kimerling, P. Blood, and W.M. Gibson, "Defect States in Proton-Bombarded Silicon at T<300K," International Conf. on Defects and Radiation Effects in Semiconductors, Inst. Phys. Conf. Ser. 46, pp. 273-280, 1979. [Kord89] R. Korde, A. Ojha, R. Braasch, and T.C. English, "The Effect of Neutron Irradiation on Silicon Photodiodes," IEEE Trans. Nucl. Sci., Vol. 36, No. 6, pp. 2169-2175, 1989. [LaBe93] K. A. LaBel, P. Marshall, C. Dale, C. M. Crabtree, E.G. Stassinopoulos, J. T. Miller and M. M. Gates, "SEDS MIL-STD-1773 Fiber Optic Data Bus: Proton Irradiation Test Results and Spaceflight SEU Data," IEEE Trans. Nucl. Sci., Vol. 40, No. 6, pp. 1638-1644, 1993. [La