ctron-hole pairs produced as the proton loses energy in a material. For traditional TID effects, holes are the more important since either trapped oxide charge or interface state formation lead to parameter shifts in transistor performance. The unique characteristic of electron-hole production along ion tracks is that electron-hole pairs along ion tracks are in relatively close proximity to neighboring charge pairs as compared to those generated by photon or electron radiation sources. This close proximity can affect the charge yield for a given dose deposition through two mechanisms: geminate recombination and columnar recombination. Both recombination processes are well documented in literature extending back to the early 1900's. For the case of protons incident on Si, [Oldh-84] established what is today recognized as the definitive study on these effects. This reference provides vectors to the relevant literature, including the model developed to assess these effects for ions simulating cosmic ray effects [Oldh-83]. The geminate recombination model applies to the situation in which electron-hole pairs are widely separated from other charge pairs and therefore more likely to interact and possibly recombine with each other. Columnar recombination applies to densely ionized tracks along which charge pairs are SO dense, and recombination is as likely to occur with pairs initiated in separate events. Figure 9, reproduced from [Oldh-84], indicates the energy dependence of the two recombination models and shows comparisons with published data acquired on n-type silicon. The yield in figure 9 is fractional, and at high proton energies where the geminate model applies the yield is expected to be the same as with Co-60. Note that even at high proton energies the relative yield does not approach unity. Furthermore, at lower proton energies important to both space environments and to test facilities, the yield decreases dramatically with decreasing proton energy. Recall from figure 7 that the lower energies correspond to 