l and C. J. Marshall, "Proton Effects and Test Issues for Satellite Applications," 1999 IEEE NSREC Short Course, Norfolk, VA. R. A. Reed, P. J. McNulty, and W. G. Abdel-Kader, "Implications of angle of incidence in SEU testing of modern circuits," IEEE Trans. Nucl. Sci., vol. 41, no. 6, pp. 2049-2054, 1994. C. Inguimbert, S. Duzellier, R. Ecoffet, and J. Bourrieau, "Proton upset rate simulation by a Monte Carlo method: importance of the elastic scattering mechanism," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2243- 2249, 1997. M. W. Savage, P. J. McNulty, D. R. Roth, and C. C. Foster, "Possible role for secondary particles in proton-induced single event upsets of modern devices," IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2745- 2751, 1998. P.J. McNulty, W. J. Beauvais, and D. R. Roth, "Determination of SEU parameters of NMOS and CMOS SRAMs," IEEE Trans. Nucl. Sci., vol. 38, no. 6, pp. 1463-1470, 1991. R. A. Reed, P. J. McNulty, W. J. Beauvais, and D. R. Roth, "Charge collection spectroscopy," IEEE Trans. Nucl. Sci., vol. 40, no. 6, pp. 1880-1887, 1993. P.J. McNulty, "Single-event effects experienced by astronauts and microelectronic circuits flown in space," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 475-482, 1996. R. S. Wagner, J. M. Bradley, C. J. Maggiore, J. G. Beery, and R. B. Hammond, "An approach to measure ultrafast-funneling-current transients," IEEE Trans. Nucl. Sci., vol. 33, no. 6, pp. 1651-1656, 1986. All references are unclassified II-70 R. S. Wagner, J. M. Bradley, N. Bordes, C. J. Maggiore, D. N. Sinha, and R. B. Hammond, "Transient measurements of ultrafast charge collection in semiconductor diodes," IEEE Trans. Nucl. Sci., vol. 34, no. 6, pp. 1240-1245, 1987. R. S. Wagner, N. Bordes, J. M. Bradley, C. J. Maggiore, A. R. Knudson, and A. B. Campbell, "Alpha, boron, silicon, and iron ion-induced current transients in low-capacitance silicon and GaAs diodes," IEEE Trans. Nucl. Sci., vol. 35, pp. 1578-1584, 1988. S. J. Heileman, W. R. Eisenstadt, R. M. Fox, R. S. Wagner, N. Bordes, and J. M. Bradl