e studies that illustrate the displacement damage concepts and analysis tools covered in the first part of section IVB. Laboratory radiation test issues specific to the proper evaluation of devices for displacement damage effects are treated. The response of several categories of devices to protons, including bipolar transistors, charge transfer devices, photo-detectors, solar cells, lasers and LEDs are described. Each case study brings to light a new aspect of displacement damage analysis. Si linear bipolar technology exhibits a wide range of displacement damage sensitivity depending on the process, IC design and application. For both Si and SiGe devices, the lateral pnp transistor exhibits an enhanced sensitivity to both TID and displacement damage. The response of CCDs to protons is unique for several reasons. The CTE degradation is determined by the interplay between the carrier emission and capture dynamics of the radiation induced traps and the device readout scheme and clocking rates. Although the increase in the mean dark current with proton irradiation is important, the dark current nonuniformity is generally the biggest concern for CCD applications in space. Dark current within a single pixel are also found to fluctuate in time in a manner characteristic of random telegraph noise. Finally, even when available mitigation techniques are employed, CCDs remain quite sensitive to proton induced damage SO that thick, high atomic number shielding is frequently employed on-orbit. We found that predictions of device performance in space must consider the displacement damage produced both by incident protons and secondary neutrons produced in the thick shielding. At the other extreme, solar cells are flown with minimal shielding and therefore lower energy protons are most important and electron damage must also be considered. Photo-detectors are inherently sensitive to radiation but such devices also exhibit a wide range of proton sensitivity dependent on their design and application. Although lasers are generall