c transmitter requirements such as regional emission limits and to certain RF carrier configurations. For those requirements, there is an associated NS value that identifies the permissible A-MPR and the associated conditions. The minimum output power level configuration defines the device dynamic range. There is a definition of the transmitter OFF power level, which is applicable to conditions where the device is not allowed to transmit. There is also a general ON/OFF time mask speci- fied, plus specific time masks for PRACH, PUCCH, SRS, and for PUCCH/PUSCH/SRS transitions. The device transmit power control is specified through requirements for the absolute power tolerance for the initial power setting, the relative power tolerance between two subframes, and the aggregated power tolerance for a sequence of power con- trol commands. In-band emissions are emissions within the channel bandwidth. The requirement limits a device's transmission leakage into non-allocated resource blocks within the channel bandwidth. Unlike the OOB emissions, the in-band emissions are mea- sured after cyclic prefix removal and FFT blocks, representing how a device transmitter affects a BS receiver in practice. For implementation purposes, it is not possible to define a generic device spectrum mask that does not vary with the channel bandwidth, thus the frequency ranges for OOB limits and spurious emissions limits do not follow the same principle as for the BS. The SEM extends to a separation from the channel edges, as illustrated in Fig. 5.13. For 5 MHz channel bandwidth, this point corresponds to 250% of the operating bandwidth as recommended by ITU-R, but for wider channel band- widths, it is set closer than 250%. The SEM is defined as a general mask and a set of additional masks that can be applied to reflect different regional requirements. Each addi- tional regional mask is associated with a specific NS value. The device spurious emission limits are defined for all frequency ranges outside the frequency range covered by the SEM. T