-noise amplification, and high-frequency switching. Inputs and outputs on MMIC devices are matched to a characteristic impedance of 50 ohms. New Radio Access RF and Transceiver Design Considerations 717 gallium arsenide (GaAs). These are ideally suited for the RF front-ends of mmWave systems such as PAs and LNAs, as well as enabling oscillators with excellent phase noise characteris- tics. More recently, SiGe-heterojunction bipolar transistor (HBT)-based technologies have attracted increasing interest for emerging mmWave markets, as fr or fmax of the HBT devices has exceeded 200 GHz. The performance of SiGe-HBT is no longer the limiting factor for a mmWave transceiver front-end integration for small-cell scenarios with limited output power, rather the quality factors of the on-chip passive devices, such as inductor, capacitor, and trans- mission lines for matching and tuning and their accurate characterization in the mmWave fre- quency domain, are the limiting factors. However, the latest products in the market demonstrate sufficient quality, which is a trade-off between performance and cost. The E-band backhaul for macro-cells usually require support of high-order QAM modulation, which can be achieved with GaAs components or a combination of SiGe/BiCMOS¹9 transmitter/receiver and GaAs PAs, LNAs, and voltage-controlled oscillators (VCOs) [23]. The CMOS20 technology promises higher levels of integration at reduced cost, if volumes scale to multi-million parts per year. Several recent developments, particularly the need for the availability of chipsets operating in mmWave frequencies, have increased efforts to enable CMOS circuit blocks to operate in mmWave bands, as the CMOS transistor fT approaches to 400 GHz. However, the performance for point-to-point links is worse than that achieved by SiGe or GaAs components in terms of phase noise and NF for the same distances typically greater than 100 m [23]. Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is a III-V direct bandgap semiconduc