ev ap oration ▁processes ▁include ▁Global ▁Sol ar ▁and ▁As cent ▁Sol ar . ▁Global ▁Sol ar ▁used ▁an ▁inline ▁three ▁stage ▁de position ▁process . ▁In ▁all ▁of ▁the ▁steps ▁Se ▁is ▁supplied ▁in ▁excess ▁in ▁the ▁v apor ▁phase . ▁In ▁and ▁Ga ▁are ▁first ▁ev apor ated ▁followed ▁by ▁Cu ▁and ▁then ▁by ▁In ▁and ▁Ga ▁to ▁make ▁the ▁film ▁Cu ▁def ic ient . ▁These ▁films ▁performed ▁quite ▁favor ably ▁in ▁relation ▁to ▁other ▁manufact ur ers ▁and ▁to ▁absor bers ▁grown ▁at ▁N RE L ▁and ▁the ▁Institute ▁for ▁Energy ▁Con version ▁( IE C ). ▁However , ▁modules ▁of ▁Global ▁Sol ar ' s ▁films ▁did ▁not ▁perform ▁as ▁well . ▁The ▁property ▁in ▁which ▁the ▁module ▁most ▁obviously ▁under - per formed ▁was ▁a ▁low ▁V OC , ▁which ▁is ▁characteristic ▁of ▁high ▁defect ▁density ▁and ▁high ▁recom bin ation ▁veloc ities . ▁Global ▁Sol ar ' s ▁absor ber ▁layer ▁out per formed ▁the ▁N RE L ▁absor ber ▁in ▁car rier ▁lifetime ▁and ▁hall ▁mob ility . ▁However , ▁as ▁completed ▁cells ▁the ▁N RE L ▁sample ▁performed ▁better . ▁This ▁is ▁evidence ▁of ▁a ▁poor ▁C IG S / C d S ▁interface , ▁possibly ▁due ▁to ▁the ▁lack ▁of ▁an ▁O DC ▁surface ▁layer ▁on ▁the ▁Global ▁Sol ar ▁film . ▁ <0x09> ▁Dis adv antages ▁include ▁uniform ity ▁issues ▁over ▁large ▁areas ▁and ▁the ▁related ▁difficulty ▁of ▁co ev apor ating ▁elements ▁in ▁an ▁inline ▁system . ▁Also , ▁high ▁growth