▁and ▁did ▁not ▁mer it ▁the ▁extra ▁equipment ▁or ▁the ▁added ▁process ▁complexity . ▁Additionally , ▁the ▁reaction ▁rates ▁of ▁Cu / G a ▁and ▁Cu / In ▁layers ▁with ▁Se ▁are ▁different . ▁If ▁the ▁reaction ▁temperature ▁is ▁not ▁high ▁enough , ▁or ▁not ▁held ▁long ▁enough , ▁C IS ▁and ▁CG S ▁form ▁as ▁separate ▁phases . ▁▁ <0x09> ▁Comp an ies ▁currently ▁that ▁used ▁similar ▁processes ▁include ▁Sh owa ▁Sh ell , ▁A van cis ▁( now ▁an ▁affili ate ▁of ▁Saint - G ob ain ▁Group ), ▁M ias ol é , ▁H onda ▁Sol te c , ▁and ▁Energy ▁Phot ov olta ics ▁( EP V ). ▁Sh owa ▁Sh ell ▁s put tered ▁a ▁Cu - G a ▁al loy ▁layer ▁and ▁an ▁In ▁layer , ▁followed ▁by ▁s elen ization ▁in ▁H 2 Se ▁and ▁sul fur ization ▁in ▁H 2 S . ▁The ▁sul fur ization ▁step ▁appears ▁to ▁pass iv ate ▁the ▁surface ▁in ▁a ▁way ▁similar ▁to ▁C d S ▁in ▁most ▁other ▁cells . ▁Thus , ▁the ▁buffer ▁layer ▁used ▁is ▁C d - free , ▁elimin ating ▁any ▁environmental ▁impact ▁of ▁C d . ▁Sh owa ▁Sh ell ▁reported ▁a ▁maximum ▁module ▁efficiency ▁of ▁ 1 3 . 6 % ▁with ▁an ▁average ▁of ▁ 1 1 . 3 % ▁for ▁ 3 6 0 0   cm 2 ▁substr ates . ▁Sh ell ▁Sol ar ▁uses ▁the ▁same ▁technique ▁as ▁Sh owa ▁Sh ell ▁to ▁create ▁the ▁absor ber ;