im pro ving ▁C M OS ▁micro processor . ▁C ray ▁eventually ▁built ▁one ▁Ga As - based ▁machine ▁in ▁the ▁early ▁ 1 9 9 0 s , ▁the ▁C ray - 3 , ▁but ▁the ▁effort ▁was ▁not ▁ade qu ately ▁capital ized , ▁and ▁the ▁company ▁file d ▁for ▁bank rupt cy ▁in ▁ 1 9 9 5 . ▁ ▁Complex ▁layer ed ▁structures ▁of ▁gal li um ▁ar sen ide ▁in ▁combination ▁with ▁al umin ium ▁ar sen ide ▁( Al As ) ▁or ▁the ▁al loy ▁Al x G a 1 − x As ▁can ▁be ▁grown ▁using ▁mole cular ▁beam ▁ep it axy ▁( MB E ) ▁or ▁using ▁metal organ ic ▁v apor ▁phase ▁ep it axy ▁( MO V PE ). ▁Because ▁Ga As ▁and ▁Al As ▁have ▁almost ▁the ▁same ▁lattice ▁constant , ▁the ▁layers ▁have ▁very ▁little ▁induced ▁stra in , ▁which ▁allows ▁them ▁to ▁be ▁grown ▁almost ▁arbitr arily ▁thick . ▁ ▁This ▁allows ▁extremely ▁high ▁performance ▁and ▁high ▁electron ▁mob ility ▁HE MT ▁trans ist ors ▁and ▁other ▁quantum ▁well ▁devices . ▁ ▁Conc ern s ▁over ▁Ga As ' s ▁sus cept ibility ▁to ▁heat ▁damage ▁have ▁been ▁raised , ▁but ▁it ▁has ▁been ▁spec ulated ▁that ▁certain ▁manufact ur ers ▁would ▁benefit ▁from ▁such ▁limitations , ▁considering ▁the ▁planned ▁ob sol esc ence ▁cycle ▁that ▁many ▁consumer ▁electron ics ▁are ▁designed ▁to ▁follow . ▁ ▁Sil icon ▁advantages ▁Sil icon ▁has ▁three ▁major ▁advantages ▁over ▁Ga As ▁for ▁integrated