▁power ▁( used ▁by ▁V ites se ▁for ▁V L SI ▁gate ▁arrays ) ▁ ▁Com parison ▁with ▁sil icon ▁for ▁electron ics ▁ ▁Ga As ▁advantages ▁Some ▁electronic ▁properties ▁of ▁gal li um ▁ar sen ide ▁are ▁superior ▁to ▁those ▁of ▁sil icon . ▁It ▁has ▁a ▁higher ▁s atur ated ▁electron ▁velocity ▁and ▁higher ▁electron ▁mob ility , ▁allowing ▁gal li um ▁ar sen ide ▁trans ist ors ▁to ▁function ▁at ▁frequencies ▁in ▁excess ▁of ▁ 2 5 0   G Hz . ▁Ga As ▁devices ▁are ▁relatively ▁ins ens itive ▁to ▁over he ating , ▁ow ing ▁to ▁their ▁wider ▁energy ▁band ▁gap , ▁and ▁they ▁also ▁tend ▁to ▁create ▁less ▁noise ▁( dist urb ance ▁in ▁an ▁elect rical ▁signal ) ▁in ▁electronic ▁circ uits ▁than ▁sil icon ▁devices , ▁especially ▁at ▁high ▁frequencies . ▁This ▁is ▁a ▁result ▁of ▁higher ▁car rier ▁mob ilities ▁and ▁lower ▁resist ive ▁device ▁par as it ics . ▁These ▁superior ▁properties ▁are ▁comp elling ▁reasons ▁to ▁use ▁Ga As ▁circuit ry ▁in ▁mobile ▁ph ones , ▁satellite ▁communic ations , ▁mic row ave ▁point - to - point ▁links ▁and ▁higher ▁frequency ▁rad ar ▁systems . ▁It ▁is ▁also ▁used ▁in ▁the ▁manufact ure ▁of ▁G unn ▁di odes ▁for ▁the ▁generation ▁of ▁mic row aves . ▁ ▁Another ▁advantage ▁of ▁Ga As ▁is ▁that ▁it ▁has ▁a ▁direct ▁band ▁gap , ▁which ▁means ▁that ▁it ▁can ▁be ▁used ▁to ▁abs orb ▁and ▁emit ▁light ▁efficiently . ▁Sil icon ▁has ▁an ▁indirect