▁film ▁composition . ▁ <0x09> ▁As ▁of ▁ 2 0 1 4 ▁C VD ▁was ▁not ▁used ▁for ▁commercial ▁C IG S ▁synth esis . ▁C VD ▁produced ▁films ▁have ▁low ▁efficiency ▁and ▁a ▁low ▁V OC , ▁partially ▁a ▁result ▁of ▁a ▁high ▁defect ▁concentration . ▁Additionally , ▁film ▁surfaces ▁are ▁generally ▁quite ▁rough ▁which ▁serves ▁to ▁further ▁decrease ▁the ▁V OC . ▁However , ▁the ▁requ is ite ▁Cu ▁def ic iency ▁has ▁been ▁achieved ▁using ▁AA - MO C VD ▁along ▁with ▁a ▁( 1 1 2 ) ▁cry stal ▁orientation . ▁ <0x09> ▁C VD ▁de position ▁temper atures ▁are ▁lower ▁than ▁those ▁used ▁for ▁other ▁processes ▁such ▁as ▁co - ev ap oration ▁and ▁s elen ization ▁of ▁met all ic ▁prec urs ors . ▁Therefore , ▁C VD ▁has ▁a ▁lower ▁thermal ▁budget ▁and ▁lower ▁costs . ▁Pot ential ▁manufact uring ▁problems ▁include ▁difficulties ▁converting ▁C VD ▁to ▁an ▁inline ▁process ▁as ▁well ▁as ▁the ▁exp ense ▁of ▁handling ▁vol atile ▁prec urs ors . ▁ ▁Elect ro sp ray ▁de position ▁▁ ▁C IS ▁films ▁can ▁be ▁produced ▁by ▁electro sp ray ▁de position . ▁The ▁technique ▁involves ▁the ▁electric ▁field ▁assist ed ▁sp ray ing ▁of ▁in k ▁containing ▁C IS ▁n ano - part icles ▁onto ▁the ▁substr ate ▁directly ▁and ▁then ▁s inter ing ▁in ▁an ▁in ert ▁environment . ▁The ▁main ▁advantage ▁of ▁this ▁technique ▁is ▁that ▁the ▁process ▁takes ▁place ▁at ▁room ▁temperature ▁and ▁it ▁is ▁possible ▁to ▁attach ▁this ▁process