▁cap ability , ▁the ▁use ▁of ▁thin ▁films ▁allows ▁for ▁truly ▁novel ▁implementation ▁of ▁TE ▁devices . ▁Instead ▁of ▁a ▁bulk ▁module ▁that ▁is ▁ 1 – 3   mm ▁in ▁thick ness , ▁a ▁thin - film ▁T EC ▁can ▁be ▁fabric ated ▁less ▁than ▁ 1 0 0   um ▁in ▁thick ness . ▁ ▁In ▁its ▁simplest ▁form , ▁the ▁P ▁or ▁N ▁leg ▁of ▁a ▁TE ▁couple ▁( the ▁basic ▁building ▁block ▁of ▁all ▁thin - film ▁TE ▁devices ) ▁is ▁a ▁layer ▁of ▁thin - film ▁TE ▁material ▁with ▁a ▁sol der ▁layer ▁above ▁and ▁below , ▁providing ▁elect rical ▁and ▁thermal ▁functionality . ▁ ▁Th erm al ▁co pper ▁pill ar ▁b ump ▁The ▁thermal ▁b ump ▁is ▁compatible ▁with ▁the ▁existing ▁f lip - ch ip ▁manufact uring ▁infrastr ucture , ▁extending ▁the ▁use ▁of ▁conventional ▁sol der ▁b ump ed ▁inter connect s ▁to ▁provide ▁active , ▁integrated ▁cool ing ▁of ▁a ▁f lip - chi pped ▁component ▁using ▁the ▁widely ▁accepted ▁co pper ▁pill ar ▁b ump ing ▁process . ▁The ▁result ▁is ▁higher ▁performance ▁and ▁efficiency ▁within ▁the ▁existing ▁sem icon duct or ▁manufact uring ▁parad ig m . ▁The ▁thermal ▁b ump ▁also ▁enables ▁power ▁generating ▁capabilities ▁within ▁co pper ▁pill ar ▁b umps ▁for ▁energy ▁rec y cling ▁applications . ▁ ▁Th erm al ▁b umps ▁have ▁been ▁shown ▁to ▁achieve ▁a ▁temperature ▁differential ▁of ▁ 6 0   ° C ▁between ▁the ▁top ▁and ▁bottom ▁headers ; ▁demonstrated ▁power ▁p