uan qui ▁on ▁the ▁National ▁Palace ▁Museum ▁Internet ▁site ▁ ▁Category : Q ing ▁dynast y ▁landscape ▁pain ters ▁Category : 1 7 1 5 ▁death s ▁Category : 1 6 4 2 ▁birth s ▁Category : P ain ters ▁from ▁Su z hou ▁Category : Pe ople ▁from ▁Ta ic ang <0x0A> </s> ▁An ▁equivalent ▁ox ide ▁thick ness ▁is ▁a ▁distance , ▁usually ▁given ▁in ▁nan om eters ▁( nm ), ▁which ▁indicates ▁how ▁thick ▁a ▁sil icon ▁ox ide ▁film ▁would ▁need ▁to ▁be ▁to ▁produce ▁the ▁same ▁effect ▁as ▁the ▁high - κ ▁material ▁being ▁used . ▁▁▁ ▁The ▁term ▁is ▁often ▁used ▁when ▁describing ▁field ▁effect ▁trans ist ors , ▁which ▁rely ▁on ▁an ▁elect r ically ▁ins ulating ▁pad ▁of ▁material ▁between ▁a ▁gate ▁and ▁a ▁do ped ▁sem icon duct ing ▁region . ▁ ▁Device ▁performance ▁has ▁typically ▁been ▁improved ▁by ▁reducing ▁the ▁thick ness ▁of ▁a ▁sil icon ▁ox ide ▁ins ulating ▁pad . ▁ ▁As ▁the ▁thick ness ▁of ▁the ▁ins ulating ▁pad ▁approached ▁ 5 – 1 0 ▁n m , ▁current ▁leak age ▁became ▁a ▁problem ▁and ▁alternate ▁materials ▁were ▁necessary ▁to ▁increase ▁the ▁equivalent ▁ox ide ▁thick ness ▁while ▁retain ing ▁the ▁switching ▁speed . ▁ ▁Material s ▁having ▁larger ▁die lect ric ▁constants ▁enable ▁th inner ▁films ▁( st ill ▁having ▁a ▁high ▁equivalent ▁ox ide ▁thick ness ) ▁to ▁be ▁used ▁for ▁this ▁purpose ▁while ▁retain ing ▁fast ▁trans istor ▁switching . ▁ ▁For ▁example , ▁a ▁high -