). ▁As ▁such , ▁this ▁technique ▁is ▁preferred ▁for ▁the ▁formation ▁of ▁devices ▁incorpor ating ▁therm od ynam ically ▁met ast able ▁allo ys , ▁and ▁it ▁has ▁become ▁a ▁major ▁process ▁in ▁the ▁manufact ure ▁of ▁opt oe lect ron ics . ▁It ▁was ▁invent ed ▁in ▁ 1 9 6 8 ▁at ▁North ▁American ▁A viation ▁( l ater ▁Rock well ▁International ) ▁Science ▁Center ▁by ▁Harold ▁M . ▁Man ase v it . ▁ ▁Basic ▁principles ▁ ▁In ▁MO C VD ▁ult rap ure ▁prec ursor ▁g ases ▁are ▁inject ed ▁into ▁a ▁re actor , ▁usually ▁with ▁a ▁non - re active ▁car rier ▁gas . ▁ ▁For ▁a ▁III - V ▁sem icon duct or , ▁a ▁metal organ ic ▁could ▁be ▁used ▁as ▁the ▁group ▁III ▁prec ursor ▁and ▁a ▁hyd ride ▁for ▁the ▁group ▁V ▁prec ursor . ▁For ▁example , ▁ind ium ▁ph osph ide ▁can ▁be ▁grown ▁with ▁trim eth yl ind ium ▁(( CH 3 ) 3 In ) ▁and ▁ph osph ine ▁( PH 3 ) ▁prec urs ors . ▁ ▁As ▁the ▁prec urs ors ▁approach ▁the ▁sem icon duct or ▁wa fer , ▁they ▁under go ▁py ro ly s is ▁and ▁the ▁sub species ▁abs orb ▁onto ▁the ▁sem icon duct or ▁wa fer ▁surface . ▁Sur face ▁reaction ▁of ▁the ▁prec ursor ▁sub species ▁results ▁in ▁the ▁incorpor ation ▁of ▁elements ▁into ▁a ▁new ▁ep it ax ial ▁layer ▁of ▁the ▁sem icon duct or ▁cry stal ▁lattice