The silicon control rectifier (SCR) consists of four layers of semiconductors, which form NPNP or PNPN structures have three P-N junctions labeled J1, J2 and J3, and three terminals.
The silicon control rectifier (SCR) consists of four layers of semiconductors, which form NPNP or PNPN structures have three P-N junctions. It has three junctions, labeled J1, J2 and J3, and three terminals.