EEPROM and flash memory media have individually erasable segments, each of which can be put through a finite number of erase cycles before possibly starting to wear-out and becoming statistically unreliable: anywhere between 10,000 and 1,000,000 cycles, for example, for NAND flash devices.
EEPROM and flash memory media have individually erasable segments, each of which can be put through a finite number of erase cycles before becoming unreliable. This can be anywhere between 10,000 and 1,000,000 cycles, for example, for NAND flash devices.