Full Wafer Redistribution and Wafer Embedding as Key Technologies for a
Multi-Scale Neuromorphic Hardware Cluster
Kai Zoschke*1, Maurice Güttler*2, Lars Böttcher1, Andreas Grübl2, Dan Husmann2, Johannes Schemmel2,
Karlheinz Meier2, Oswin Ehrmann3
1

2

Fraunhofer IZM, Gustav-Meyer-Allee 25, 13355 Berlin
Heidelberg University, Kirchhoff-Institute for Physics, Im Neuenheimer Feld 227, 69120 Heidelberg
3
Technical University of Berlin, Gustav-Meyer-Allee 25, 13355 Berlin

Abstract
Together with the Kirchhoff-Institute for Physics the
Fraunhofer IZM has developed a full wafer redistribution and
embedding technology as base for a large-scale neuromorphic
hardware system. The paper will give an overview of the
neuromorphic computing platform at the Kirchhoff-Institute
for Physics and the associated hardware requirements which
drove the described technological developments.
In the first phase of the project standard redistribution
technologies from wafer level packaging were adapted to
enable a high density reticle-to-reticle routing on 200 mm
CMOS wafers. Neighboring reticles were interconnected
across the scribe lines with an 8 µm pitch routing based on
semi-additive copper metallization which was photo defined
by full field mask aligning equipment. Passivation by photo
sensitive benzocyclobutene (BCB) was used to enable a
second intra-reticle routing layer. Final IO pads of nickel with
flash gold were generated on top of each reticle. For final
electrical connection the wafers were placed into mechanical
fixtures and the IOs of all reticles were touched by elastomeric
connectors. With that concept neuromorphic systems based on
full wafers could be assembled and tested. The fabricated high
density inter-reticle routing revealed a very high yield of
larger than 99.9 %.
In order to allow an upscaling of the system size to a large
number of wafers with feasible effort a full wafer embedding
concept for printed circuit boards was developed and proven
in the second phase of the project. The wafers were thinned to
250 µm and laminated with additional prepreg layers and
copper foils into a core material. A 200 mm circular cut was
done into the core material and the inner prepreg layers to
create the required clearance for the wafer. After lamination of
the PCB panel the reticle IOs of the embedded wafer were
accessed by micro via drilling, copper electroplating,
lithography and subtractive etching of the PCB wiring
structure.
The created wiring with 50 µm line width enabled an
access of the reticle IOs on the embedded wafer as well as a
board level routing. The panels with the embedded wafers
were subsequently stressed with up to 1000 thermal cycles
between 0 °C and 100 °C and have shown no severe failure
formation over the cycle time.
1. Introduction
The EU funded Human Brain Project (HBP) [1] is
developing methods and tools to provide neuroscience with

state-of-the-art and future computing capabilities. The HBP is
operating six research platforms of which one is dedicated to
neuromorphic computing (NMC), a technology implementing
brain-like architectures on electronic substrates. As part of the
HBP NMC platform the BrainScaleS system is based on
physical models of brain cells (neurons), their connections
(synapses) and the underlying network structure. Physical
models closely resemble biology as they are implemented
with local analog circuitry for neurons and synapses and
binary, event (spike) based communication between neurons.
BrainScaleS is an accelerated physical model in which
relevant electronic time constants are scaled down by a factor
of 1000-10000 compared to biology with the goal to emulate
various neural mechanisms of learning and development in a
single experimental set-up. The acceleration causes extreme
requirements on the communication bandwidth in the
network, which have been met by employing wafer scale
integration for the inter-chip connectivity.
The BrainScaleS base chips are mixed-signal ASICs. The
first generation HICANN (High-Input-Count-Analog-NeuralNetwork) chip was manufactured in a 180 nm CMOS
technology by the company UMC. It features 114,688
programmable dynamic synapses and up to 512 neurons [2]. A
single 200 mm wafer carries 384 usable HICANN chips. The
wafers are mounted into modules, which deliver electrical
power and carry FPGA modules for the communication with a
host computer. The FPGAs are used to configure the chips as
well as to transmit events to and from the neural circuits on
the wafer [3]. The HBP NMC platform currently comprises a
total of 20 wafer modules from the first generation HICANN
chips with approximately 1 Billion synapses and a maximum
of 4 Million neurons. The second generation HICANN chips
are currently realized in a 65 nm CMOS technology by the
company TSMC. They offer several advanced computational
features like an on-chip general purpose RISC processor for
local learning [4] and a multi-compartment neuron model [5].
The full wafer redistribution and printed circuit board
embedding described in this paper was carried out using the
first generation wafers in 180 nm technology. The applied
redistribution layer (RDL) technology was adapted from stateof-the-art processes for fan-in wafer level chip size packaging
which are broadly used today [6, 7]. The full wafer embedding
technology was adapted from a standard technology for chip
embedding into printed circuit boards [8].
All process and technology developments were done with
the goal to transfer the results also to the wafers with 65 nm
technology for the second generation system, later. To enable

a further upscaling, the processes are also suitable for a
transfer to 300 mm wafers.
2. Current Hardware Platform based on Full Wafers with
High Density RDL
The BrainScaleS system consists of 68 electronic subassemblies and 14 mechanical components. In Figure 1 (a) an
exploded view of the system is shown. In the center is the
HICANN wafer (A) with the mainPCB (D). Between both is a
positioning mask with 384 elastomeric connectors (C). At the
bottom are the 48 FPGA modules (B) and on top are the
boards for the power supply of the system (E, F). When
completely assembled the module occupies a space of
50x50x15 cm³. The module is designed for a worst-case
power consumption of 2 kW.

(a)

(b)

Figure 1: (a) exploded view of the BrainScaleS system. See main text for
explanation. (b) Photograph of a fully assembled wafer module.

The mainPCB has a length and width of 43 cm. 14 copper
layers distribute twelve supply voltages to the wafer, 1150
measurement lines and over 3000 data signals [9]. To
facilitate signal routing, micro vias have been stacked over
five copper layers to avoid penetrating the routing area on the
other layers with through-hole vias. The 48 FPGA modules
are used for the communication between the HICANN chips
on the wafer and the host computer. For the host
communication every FPGA module is equipped with
Gigabit-Ethernet. 12 of these connections are routed to each
edge of the module, respectively (H). On the wafer side one
FPGA controls eight HICANN chips that together account for
one reticle. Every HICANN has two full-duplex serial LVDS
links with separate clock and data lines to the FPGA module.
The link is capable of transmitting two GBit/s. In total the
FPGAs handle 384 HICANN chips. The neuron model on the
HICANN chip is implemented with analog electronic
components and, therefore, runs in a continuous time mode. In
contrast, the communication of neuron events uses digital
packets [10]. As a result, the circuitry is power efficient and
the complete HICANN consumes only 1.3 W/cm². Due to the
accelerated operation of the analog circuitry delays in the
communication lines are crucial to the neuronal network
behavior. A mean firing rate of 10 Hz in the biological time
domain transforms to 100.000 Hz in the electronic time.
Moreover, the input count of synapses to a neuron can be

increased by combining adjacent neurons. A maximum of 64
combined neurons leads to 14336 synapses per neuron. This
means that on average 1.4 GEvents/s have to be transmitted
per neuron. However, in periods of bursting neuron activity it
can be much higher. The aforementioned constraints require a
communication link with low latency and high through-put.
Furthermore, it should have a low power consumption. This is
achievable by keeping the silicon wafer as a whole and create
connections between the chips on the wafer, in addition to
LVDS interface. The advantage is shorter lines with a very
high density and a lower capacitive load. A drawback is that
the standard CMOS manufacturing process restricts the layout
to the lithography area inside a reticle. In case of the wafers
made in 180 nm technology this area is around 20 x 20 mm
and eight HICANNs fit inside. Hence, a post processing of a
wafer-scale RDL is required to create the connections across
reticle borders. In total the on-wafer network connectivity
requires 2048 lines across the horizontal edge and 1280 lines
across the vertical edge for the interconnection of adjacent
reticles. Additionally, a second RDL is required to add pads
for the connection of the wafer to the mainPCB. Two
HICANNs have a combined pad layout with 62 pads which
sums up to 11904 pads on the complete wafer. The pad sizes
vary depending on the expected current flow. The smallest
pads (i.e. for the LVDS lines) are 1200x200 µm2. Between the
main PCB and the HICANN wafer 384 elastomeric
connectors from Fujipoly establish the vertical connections. In
Figure 2 the working principle of an elastomeric connector is
depicted. They have conductive and insulating layers with a
width of 50 µm. After compression to around 80 % of its
initial height the silver balls in the conductive layer create an
electrical connection from top to bottom.

Figure 2: Working principle of an elastomeric connector. The FR4
positioning mask keeps the elastomeric connector in its position.

With the BrainScaleS system concept large neuronal
networks on one HICANN wafer with 200.000 neurons and
40.000.000 synapses are possible. For network sizes larger
than one wafer multiple modules can be interconnected. At the
moment the neuronal events are routed over a compute
cluster. Later, it is intended to connect the modules directly
with each other.
3. Full Wafer High Density RDL Technology
As discussed in chapter 2 the usage of full wafers with
interconnections between the reticles is the key approach for
the implementation of the neuronal networks in this work.
However, due to stepper based lithography in front end fabs
an interconnection wiring across reticle borders could not be
implemented in the back end of line (BEOL) stack of the
HICANN wafers. For the establishment of an inter-reticle as
well as additional intra-reticle wiring a post processing by
wafer level packaging technologies is most appropriate. These

technologies like wafer bumping or redistribution typically
use full field lithography masks so that all areas on the entire
wafer are exposed simultaneously during one single exposure
step. Based on this, a structure definition between dies or
reticles becomes possible.
For the realization of the required ultra-high density
routing between the reticles of the HICANN wafers as well as
for the regular intra-reticle routing the standard redistribution
process at Fraunhofer IZM for fan-in chip scale packaging
was adapted and optimized to meet the extended requirements.
The standard redistribution process which is shown
schematically in Figure 3 is based on deposition and
structuring of four functional layers. Layer 1 is a thin photo
sensitive polymer of 5 µm thickness which covers the entire
wafer. Vias are structured into this polymer above each chip
IO pad to be connected. The second layer is the redistribution
wiring of 3-5 µm thick electroplated copper with line pitches
not less than 40 µm. This wiring layer connects the original
chip pads and re-routes them typically to an area array
configuration with larger pad size and pitch. The third layer is
a further polymer of 5-10 µm thickness which covers the
wiring structure. It is only opened on top of the new created
pad structures. The fourth layer is typically electroplated
nickel with gold flash which is deposited as under bump
metallization at the via openings of the second polymer layer.

The left image in Figure 4 shows an example of the IO pad
arrangement along the reticle borders of a HICANN wafer as
received from the wafer fab. The areas with the IOs are
marked in red. The right image in Figure 4 shows a closer
zoom to the high density IO pads. The pad pitch (PP) is 19 µm
and the pad width (PW) is 15 µm. The pads are separated by a
spacing (PS) of only 4 µm and the passivation opening (PO)
on top of each pad is 5 µm.

Figure 3: Standard redistribution technology for fan-in chip scale
packaging

Based on earlier experiments with electroplated fine pitch
routing over entire wafers a minimum possible line pitch of
8 µm was defined for the inter-reticle routing on the HICANN
wafers. Considering estimations on possible full field mask
alignment accuracy, required overlaps for capture pad to IO
pad alignment as well as minimum possible via opening
dimensions in the first polymer layer an optimized
arrangement of the high density IO pads along the reticle
borders could be defined.

Figure 5: Schematic process flow of adapted technology for full wafer
redistribution with ultra-fine pitch inter-reticle routing
Figure 4: Example image of the reticle border with the pad configuration
for interconnection with ultra-high density RDL (left), image with closer
zoom into pad configuration (right)

The wafers with the described high density pad
configuration were treated with the new developed post
processing sequence which is schematically shown in Figure 5.

All lithography steps were done by using mask aligner
equipment and full field 9 inch photo masks.
Picture 1 in Figure 5 indicates the initial state of the wafers
as shown in Figure 4. Picture 2 in Figure 5 shows the result
after finishing the first process sequence were copper posts
with 4 µm height were created on top of each IO pad. The
copper was deposited by semi-additive technology, which
means, that the copper was electroplated into openings of a
resist mask. The resist mask itself was structured on a
sputtered adhesion and seed layer. The adhesion layer is also
thick enough to act as diffusion barrier between the copper
posts and the aluminum IO pads. After the electroplating step,
the resist was removed and the seed and adhesion layers were
etched away.
In the next process sequence (picture 3 in Figure 5) the
polymer passivation layer was fabricated. Due to the small via
geometries which had to be realized the usage of photo
sensitive polymer and direct structuring by lithography as in
the standard process was not possible here. Instead of this, the
via openings were realized by dry etching using a photo resist
as mask covering the polymer. Non-photo sensitive BCB was
used here as a polymer. The dry etching process stopped on
the surface of the copper posts after the polymer was etched
through without damaging the original reticle IO pads. The
copper posts allow an optical inspection of the etching result
and thus a secure determination if the polymer was completely
etched away.
Picture 4 in Figure 5 shows the result after the next process
sequence were the actual ultra-fine pitch wiring across the
reticle borders with 8 µm pitch was generated. The wiring is
fabricated by semi-additive copper deposition with a height of
3 µm. The thicknesses of the sputtered adhesion and seed
layer were reduced here to enable later their easy removal by
wet chemical etching without the risk to remove too much
material from the fine pitch RDL or to damage it by under
etching. However, after removal of the photo resist the seed
layer was not yet etched. Instead of this, an additional photo
resist lithography was done to define a further wiring structure
which runs inside the reticles and does not cross reticle
borders. The so-called intermediate routing has relaxed line
widths and spaces comparable with standard RDL features.
The intermediate routing is indicated by the orange structure
appearing in picture 5 of Figure 5. After deposition of the
intermediate routing the seed and adhesion layers were wet
chemically etched.
In the next process sequence a photo sensitive BCB
polymer layer was deposited and structured by direct exposure
and development. Due to the larger vias located in this layer
the standard process from regular RDL technology could be
used here. Picture 6 in Figure 5 shows the schematic cross
section of the build up after the polymer process was finished.
In the final process sequence the nickel pads with gold
flash were fabricated using semi-additive technology. The
final schematic build-up of the wafers after completed post
processing is shown in picture 7 of Figure 5. The created pads
serve as interface to the next system level. An elastomeric
connector as shown in Figure 2 will touch down on each
individual pad to establish the electrical connection in the final
system assembly.

The left image in Figure 6 shows the fabricated ultra-high
density RDL structure after the complete post processing
sequence was finished. The RDL routing runs across the
reticle borders and provides interconnection between adjacent
reticles. The image shows a similar area of the wafer as the
left image in Figure 4 which shows neighboring reticles before
the post processing was executed. The right image in Figure 6
shows a closer zoom into the connection area of the routing
were the RDL is connected to the reticle IO pads. The image
shows the same area on the wafer as the right image in Figure
4 which was taken before the post processing was performed.
As indicated in Figure 6, the fabricated ultra-fine pitch routing
has a line to line pitch (LLP) of 8 µm with a line width (LW)
of 4 µm and a line to line spacing (LLS) of 4 µm. The spacing
between the capture pads and the lines (PLS) is also 4 µm.
Figure 7 shows an image of one full HICANN wafer after
completed post processing. The detail views show examples
of the ultra-fine pitch RDL, as well as the intermediate RDL
and the final nickel/gold pads for the touchdown of the
elastomeric connectors. By using the described technology in
total about 160.000 functional inter-reticle connections were
established on each HICANN wafer. Electrical tests of the
connections revealed a routing yield of >99.98 %.

Figure 6: Fabricated ultra-high density RDL across reticle borders (left),
closer zoom into connection area of RDL to high density IO pads (right)

Figure 7: HICANN wafer with RDLs. Enlargement views show a reticle
and the fine-pitch lines across the reticle borders.

4. Up Scaled Neuromorphic Hardware Cluster with higher
Wafer Numbers using Wafer Embedding Technology
At the moment, 20 BrainScaleS systems are assembled and
in operation in Heidelberg. They occupy five standard 19"
server racks. So the distance between the neuromorphic
modules is in the range of meters which adds a significant
delay in the communication chain. Moreover, the complete
assembly and testing of one system takes at least one
workday. Most of the assembly steps are done by hand and are
not automatable, e.g. filling of the positioning mask with
elastomeric connectors and the alignment of HICANN wafer
and mainPCB. Therefore, building a large-scale neuromorphic
hardware cluster with the current BrainScaleS integration
concept is limited.
For a large-scale neuromorphic cluster a new concept is
required. A change to smaller process technologies does not
necessarily increase the number of neurons and synapses. The
next generation of HICANN chips in 65 nm technology will
have approximately the same amount of neurons and
synapses, with more sophisticated features. Additionally, in
65 nm technology more digital circuits can be placed in the
same chip area which allows the integration of a general
purpose RISC processor to implement local learning rules [4].
In the long run the external components of the BrainScaleS
system could be implemented directly on the wafer which
would reduce the volume of the system. For hundreds of
systems the current wafer connection concept also has to be
replaced. Therefore, it is intended to embed the silicon wafers
into printed-circuit boards. With a reduced wafer thickness of
250 µm the total board thickness can be reduced to
millimeters. The contacts through the laminate to the
embedded silicon wafer are created by micro vias filled with
copper, the production of the board uses standard PCB
manufacturing techniques. As a consequence the amount of
manual work is drastically reduced. The absence of external
components allows the stacking of multiple boards which is
schematically shown on the left side in Figure 8. The image
shows a possible stack of five boards with water cooling
modules in between to handle the heat dissipation.

5. Full Wafer Embedding Technology
Embedding of active and passive components into printed
circuit boards (PCBs) meanwhile has moved from
academicals and research activities to an industrialized
process [8]. The technology is based on laminate (prepreg)
embedding and PCB processing. The basic process flow is the
component placement, e.g. to a FR4 core, embedding by
vacuum lamination using epoxy prepreg, micro via laser
drilling to the embedded components and a subsequent
metallization and structuring of the wiring lines.
The idea of embedding a complete wafer into a PCB, in
order to create the wiring substrate around, is based on this
technology, although the “chip” becomes much larger. That’s
why warpage control of the substrates became of paramount
importance. As illustrated in Figure 9, for embedding of the
wafer, a suitable core is needed which is surrounding the
wafer and acting as the substrate material. Initial trials did
show that by using regular PCB materials only, warpage of the
substrate could not be controlled. As a result, a handling and
processing of the substrates was not possible.

Figure 9: Schematic build up wafer embedding with symmetric layup

Due to that reason, different core materials were tested.
Although ultra-low CTE (2 – 4ppm/K) laminate materials
provide improved warpage control, the best results were
achieved using a copper-invar-copper substrate (CIC). Invar is
a nickel/iron compound with a CTE of around 1.2ppm/K,
controlling the lateral extension of the substrates, and with
that proving a good warpage control.
Based on the use of CIC as core substrate, an adapted
process flow was developed, which is shown in Figure 10. To
enable this flow the thickness of the HICANN wafers was
reduced to 250 µm by back grinding and subsequent dry
polishing.

Figure 8: Stacking of boards with embedded wafer systems (A) and water
cooling module (B) (left), Samtec ZA1 connector (C) with dual
compression contacts for multiple stacking of boards (right)

The flat boards without mounted components allow a
vertical stacking with direct interconnections between them.
Instead of elastomeric connectors for the vertical connections
interposers with compression contacts on both sides will be
used. The picture on the right side in Figure 8 shows a Samtec
ZA1 connector which has an array of 10x10 pins with a pitch
of 1 mm. Due to the coarse pitch of the pins only a simple
alignment of the boards is required.

Figure 10: Process flow for full wafer embedding

In order to place the wafer in the core, first a cut out is
made into the core material. For a double sided routing on the
substrate, additionally through holes are drilled. Since the CIC
compound is electrically conductive, they need to be isolated
again later. For embedding, the lamination layup is applied. A

fully symmetric build up is realized by applying identical FR4
prepreg layers on both sides of the core. The final layer is a
thin copper foil, which is needed as base for the copper
metallization. Image (a) in Figure 10 shows the schematic
cross section of the lamination layup. Figure 11 illustrates the
layup of the different layers. After preparing the layup the
stack is transferred to a vacuum lamination press, were
pressure and a temperature ramp is applied. During this
process the resin of the prepreg material firstly starts to flow
and fills all gaps and through holes (THs). In the second phase
of the lamination, the epoxy resin is fully cured. Now the
wafer is embedded into the substrate and the through holes are
isolated with epoxy resin which is shown in picture (b) of
Figure 10.
Figure 12: Top view on DENSE board with an embedded HICANN
wafer. Each 10x10 pad array connects to two HICANN chips on the
wafer.

6. Mechanical, Electrical and Reliability Characterization
of Fabricated Prototypes
The test setup for the DENSE board uses an existing test
setup which was developed for HICANN test chips. In
principle, it is a small scale version of the BrainScaleS system.
It uses the same FPGA boards and software stack as the
wafer-scale system. In Figure 13 the prototype setup is shown.
From a user perspective there is no difference in the use of the
systems. In total up to eight HICANN chips can be connected
to this setup.

Figure 11: Layup of CIC core, epoxy prepreg layer and Cu foil

To realize the access to the contact pads of the embedded
wafer, micro vias are made by UV laser drilling. The position
of the vias are defined by Gerber data input. To enable the UV
drilling with secure stop on the wafer contact pads they were
reinforced by 12 µm thick electroplated copper during the
wafer processing. The micro vias have a nominal diameter of
50 µm. According to the thickness of the prepreg layer the via
depth is approximately 50 µm. Additionally to the micro vias,
the prepared through holes in the CIC material are re-opened
by laser drilling with a smaller diameter as the original holes.
The remaining epoxy material in the hole is used as an
isolation layer to the conductive CIC layer. This way vertical
interconnects between front and backside of the substrate are
realized which is shown in picture (c) of Figure 10. Finally,
copper is deposited and the routing structure is patterned by
lithography and etching as indicated in picture (d) of Figure
10. The routing layer has a thickness of 18 µm and a minimum
line pitch of 80 µm. The minimum line width of the routing is
50 µm.
Figure 12 shows the resulting “Deep EvolutioN in System
Embedding” (DENSE) board which was created. Using the
described process it was possible to build an almost flat
substrate with the embedded 200 mm HICANN wafer inside.
The board has a total size of 360 x 240 mm2. The thickness of
the board is 0.42 mm.

Figure 13: DENSE prototype setup. At the bottom is the DENSE board
(A) which is connected with flex-rigid adapter boards (B) to the HICANN
test setup (C).

The DENSE board has one copper layer per side, hence,
only two HICANNs per reticle could be routed to a ZA1
connector. During the lamination process the wafer rotated
slightly. However, the copper layout and the micro vias could
be adjusted to the new position of the wafer pads.
Unfortunately, the new positions of the plated through holes
(PTHs) connecting top and bottom of the board were not in
line with the pre-drilled holes in the CIC material. If the PTHs
were added, there would be shorts. Hence, the PTHs were not
created that reduced the number of accessible HICANNs from
112 to 80 chips. These are equally distributed over the wafer.
For preventing the rotation issue to occur again wafers for
next embedding runs will be equipped with two flats along
their edges.
The characterization of the embedded wafer was done with
three tests. First the communication over a JTAG port and
LVDS links is tested. This is done by writing random data in
Static Random Access Memory on the chip and comparing the
sent value with the read back value. The second test checks
the proper functioning of analog parameter storage circuits on
the wafer. The parameters are stored in floating-gate cells. The
storage consists of 4 blocks with 24 rows and 129 columns
each which adds up to 12384 floating-gate cells per HICANN.
Every cell can be programmed individually to a voltage
between 0 V and 1.8 V. Every cell is programmed with a
random value and then checked by reading the analog voltage.
In the last test a neuron calibration is conducted on all 512
neurons. The calibration software tries to find neuron
parameters such that the neurons behave like the
corresponding numerical neuron model and eliminates fixed
pattern noise between the neuron circuits. The number of
rejected neurons is used for the characterization of the
embedded wafer system. For these neurons no functioning
parameter set could be found.
In summary, it can be said that none of the described tests
showed a problem which could be related to the embedding
process [11]. On the DENSE board the communication
worked flawlessly with 77 of the 80 HICANN chips. One
HICANN chip had completely broken floating-gate blocks
which could not be programmed to the desired values. The
values were either 0 V or 1.8 V which indicates to a problem
in the floating-gate controller circuit. Therefore, the neurons
on this chip could not be calibrated too. Apart from that there
was no further broken floating-gate block detected. The
neuron calibration revealed another HICANN chip where
almost all neurons could not be calibrated. The reason was
most likely a broken circuit block which affected all neurons
on the chip. These errors also occur in the BrainScaleS system
and for the remaining chips the number of sorted out neurons
was in the expected range. In Figure 13 is the result for neuron
calibration depicted. There are no influences of the embedding
process visible on the chips and the RDLs.
In order to approve the robustness of the embedding
technology as well as the reliability of the micro via
connections and board level RDL accelerated environmental
stress tests were performed with embedded dummy wafers.
Those wafers had the identical multi-layer post processing as
the functional wafers including IO pads at the top level for
landing of the micro vias. A special routing layout was created
for the embedding of these dummy wafers to establish daisy-

chains which run alternating at the wafer and at the board.
Those test PCBs were exposed to temperature cycling
between 0 °C and 100 °C using a cycle time of 30 min. Up to
1000 cycles were executed. The resistance values of 15 daisy
chains were observed during interruptions of the cycling load
as well as after all 1000 cycles. All 15 chains were still fully
intact after completion of the cycling tests.

Figure 13: Wafer map with the number of sorted out neurons by the
calibration software for the DENSE board.

A DENSE board with an embedded functional wafer had to
undergo an accelerated environmental stress test as well. It
was placed in a climate cabinet and put under thermal stress.
The temperature changed cyclic between 15 °C and 90 °C.
The real operating temperatures of a system are between
25 °C and 60 °C. In total 393 thermal cycles were driven.
After that the board was placed in a soldering furnace to see a
possible influence of the soldering process. The furnace
reaches a maximum temperature of 230 °C. An optical
inspection showed no delamination of the stack up or warpage
of the board. A subset of the available chips on the embedded
wafer was checked with the same tests as before. No failures
induced by the thermal stress could be observed. All
connections to the wafer worked fine.

Figure 14: Temporal changes of the results of the neuron calibration
during the thermal stress tests.

In Figure 14 the temporal change of the number of sorted
out neurons is plotted. The changes between the test runs are
in the range of trial-to-trial variations.
In the prototype setup the Samtec ZA1 connectors are used
as a solderless connection to the DENSE board. The ZA1 has
to be compressed to 1 mm to create a vertical connection. All
tests with the DENSE boards were conducted with only two
ZA1 connectors. At the end they had been compressed more
than 100-times. Nevertheless, they showed no degradation and
the springs returned in their initial position.
7. Conclusion and Outlook
The existing wafer level redistribution process at the
Fraunhofer IZM was successfully extended to enable ultrahigh density inter-reticle routing with a pitch of 8 µm at
200 mm wafers. The established post processing technology
for 200 mm HICANN wafers is the basis for a large-scale
neuromorphic hardware system at the Kirchhoff-Institute for
Physics of the Heidelberg University. Based on the
BrainScaleS platform each wafer is the core of a
neuromorphic module which can be linked together to create
large neuronal networks. Up to now a number of 20
BrainScaleS systems are assembled. To enable the upscaling
of the network size to a higher number of wafers a different
technology platform was evaluated. Instead of discrete
assembly and IO connectivity via elastomeric stripe
connectors the wafers were embedded into printed circuit
boards. This was enabled by adaption of the standard IC
embedding technology from Fraunhofer IZM to full wafers.
The embedding of the HICANN wafers in a printed-circuit
board was an overall success. It was shown that the
embedding process has neither an influence on the circuits nor
on the RDLs. There was no degradation or failure during the
accelerated
environmental
stress
tests
observable.
Furthermore, the ZA1 connectors seem to be a reliable
connector for later board to board connections.
The next step is to add backside connections to the wafer.
They will be used for heat dissipation and later in combination
with through silicon vias for the power supply of the wafer. A
prototype with backside connections to the silicon is currently
in production.

Figure 15: Possible stack up of the final embedded wafer system with
connections on both sides of the silicon wafer, multiple copper layers,
TSVs and embedded capacitors.

After that the number of copper layers will be increased. It
should be possible to access half of the HICANNs with an
additional copper layer. The long-term goal is to achieve a
board like it is shown in Figure 15. It has backside
connections, TSVs, multiple copper layers and embedded
capacitors. Furthermore, the current 200 mm HICANN wafers

are replaced with 300 mm wafers containing the second
generation HICANN chips in 65 nm technology.
Acknowledgments
This work has received funding from the European Union
7th Framework Program ([FP7/2007-2013]) under grant
agreements no 604102 (Human Brain Project), 269921
(BrainScaleS) and the Horizon 2020 Framework Program
([H2020/2014-2020]) under grant agreement 720270 (Human
Brain Project). The first two authors contributed equally to
this work. The authors thank all employees from KirchhoffInstitute for Physics, Technical University of Berlin and
Fraunhofer IZM who have contributed to this work.
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