Enabling Bio-Plausible Multi-level STDP using
CMOS Neurons with Dendrites and Bistable RRAMs
Xinyu Wu

Vishal Saxena

Boise, ID, USA
tomas.wu@gmail.com

Department of Electrical and Computer Engineering
University of Idaho
Moscow, ID, USA
vsaxena@uidaho.edu

Stochastic

I. INTRODUCTION
Human brain is capable of processing unstructured
information sensed from the environment, and performing realtime pattern discovering and recognition tasks in a remarkably
fast, accurate, robust, and energy-efficient manner. Thanks to a
half century of advances in semiconductor technology, modern
computers can perform such tasks but still require orders of
magnitude higher energy, as well as specialized programming.
Massive parallelism, event-driven spike-based communication
and in-situ synaptic plasticity are believed to be responsible for
brain’s effective and energy-efficient information processing.
Recently, brain-inspired neuromorphic hardware have
demonstrated impressive ultra-low power performance in
implementing convolutional neural networks [1]. However, it
is not amenable to accommodate a huge number of synapses
and cannot adjust the synaptic weights while in operation. In
the past decade, the discovery of spike-timing-dependentplasticity (STDP) and emerging of nanoscale resistive randomaccess memory (RRAM) devices has opened new avenues
towards the realization of brain-inspired computing. Many
RRAMs have demonstrated small feature size (4F2), ultraenergy-efficiency (pJ/switch), CMOS compatible and 3D
integration capability, and exhibit bio-plausible STDP
characteristics [2], [3]. Studies also suggested STDP can be
used to train spiking neural networks (SNNs) with RRAM
synapses in-situ without trading-off their parallelism [4], [5].

A densely-integrated CMOS-RRAM spiking neural
network, with non-volatile analog-like weights, is ideal for
such realization [4], [7]. However, neuromorphic circuit
community is facing challenges in practical realization of these
implementations, where a major roadblock is the bistable and
probabilistic switching behavior of RRAM [9]–[12]. A
majority of small-size RRAMs exhibits abrupt switching
nature, which in consequence limits stable synaptic resolution
to 1-bit (or binary, bistable); furthermore, their switching
probability and switching time are typically depends on the
voltage applied to the device, as well as the duration of the
voltage pulse. Fig. 1 illustrated the abrupt resistance decrease
(SET) and the corresponding switching dependence on the
voltage in a HfOx RRAM device [13]. To circumvent these
issues, compound memristive synapse with multiple bistable
devices in parallel was recently proposed to emulate analog
weights [12]–[14]. Moreover, a standard pattern classification
application has shown that least 4-bit of synaptic resolution is
needed to achieve reasonable recognition performance [15].
However, simply placing multiple bistable RRAM in parallel
doesn’t result in the expected exponentially shaped learning
A

B

1M

100k

Probability Density (%)

Keywords—Neuromorphic; Resistive Memory;
Computing; Spike-Timing Dependent Plasticity

Consequently, it is natural to envision hybrid CMOS-RRAM
very-large-scale integrated (VLSI) circuits to achieve dense
integration of CMOS neurons and RRAM synapses to build
neural-inspired computing chips by leveraging the nanometer
scale silicon processing technology. Recently, mixed-signal
chips with spiking neurons that can interface with RRAM
devices, and learning algorithms and circuits built using these
neural motifs have been demonstrated by the authors [6]–[8].

Resistance (Ω)

Abstract— Large-scale integration of emerging nanoscale
non-volatile memory devices, e.g. resistive random-access
memory (RRAM), can enable a new generation of neuromorphic
computers that can solve a wide range of machine learning
problems.
Such
hybrid
CMOS-RRAM
neuromorphic
architectures will result in several orders of magnitude reduction
in energy consumption at a very small form factor, and herald
autonomous learning machines capable of self-adapting to their
environment. However, the progress in this area has been
impeded from the realization that the actual memory devices fall
well short of their expected behavior. In this work, we discuss the
challenges associated with these memory devices and their use in
neuromorphic computing circuits, and propose pathways to
overcome these limitations by introducing ‘dendritic learning’.

Abrupt
SET

10k

1k

25
20

Measured from
One device for 100 cycles

15
10
5

Repetitive Pulse +1.7V / 10ns
100

0

5

10

Pulse Number

15

20

0
1.0 1.2

1.4

1.6

1.8

2.0

2.2

2.4

2 .6

SET Pulse Threshold (V)

Fig.1. Binary stochastic switching and the STDP in RRAM. (A) Abrupt SET
transition starting from the off-state by repetitive SET pulses. (B) Measured
statistical distribution of pulse amplitude required for triggering the SET
switching from the off-state (adapted from [13]).

A

Vpre

B

Vpre

RRAMs

C

Vleaky

Δt < 0

Foreward
spikes

Vpost

Vrefr

Cmem

SW1

t

t
Vnet = Vpost - Vpre

Vnet = Vpost - Vpre

Pre-synaptic
neuron

Vpost

Veff

Vth-

Av

Vth+

Vth+
t

Vth-

t

Vthr

Mleaky
Фd=1
SW2

t

t
Δt > 0
Vpost

Compound
Synapse

Backward
spike

Veff

Spike
Generator

Vrest

Vpd,0
Vpd,1
α1

1

Vpd,2

Фf=0
Фd=0

Vpre

α2

1 SW3
Vcpr

Vmem

Фd
Фi Phase
Ф1 Controller
Ф2

Post-synaptic neurons

Фf Bus
Фc

αn

Dendritic
Processing
Vtch
Vmode
Vrst

Interface

Vwtab

Fig.2. The proposed with CMOS neural network with dendritic processing. (A) A pair of spikes are applied across a synapse to create relative-timing dependent
net potential Vnet, of which the over-threshold portion (Veff ) may cause the RRAM resistance to switch. (B) A single layer of spiking neural network with RRAM
synapses organized in crossbar architecture. Post-synaptic neuron connects with a pre-synaptic neuron with several RRAM synapses in parallel. Back-propagated
spikes after dendritic processing modulate RRAM in-situ under STDP learning rule. (C) Schematic diagram of the proposed CMOS neuron with dendritic
processing architecture. Parallel attenuators (αi) reduce voltage amplitude of backward spikes for parallel RRAM devices when CMOS soma fires. During nonfire (integration) mode, all parallel RRAM devices are connected to same current summing point.

window that appears in biological STDP, which has been
found critical for guaranteeing computing stability and
efficiency in theoretical analyses [16]–[18].
The fundamental contribution of this work is that we
propose a new concept where “dendritic processing” is added
to the compound synapse. This is an important step where
bistable switching devices, which have been practically
realized, be researchers, can be employed in stochastic regime
to realize synapses with multi-bit resolution and lead to
practical realization of large-scale spiking neural networks on
chip. Leveraging the bistable probabilistic switching, we
specifically demonstrate that the proposed compound synapse
with dendritic processing can realize high-resolution plasticity
with the much desired exponentially-shaped STDP learning
window.

are reduced in these branches depending on their attributes.
Since the synaptic devices’ switching depends on the voltage
and duration applied on their two terminals, these postdendritic spike waveforms after dendritic processing produce
several different voltage amplitudes and cause the synaptic
devices to switch with different probabilities (assuming same
pulse duration): the greater of the post-dendritic spike
amplitude, the higher probability to switch; the lower of the
post-dendritic spike amplitude, the less probability to switch.
Thus, from statistical standpoint, the average conductance of
the compound synapse with n binary RRAM devices in parallel
under a given voltage Vi can be written in mathematical
formula as
𝑛

̅̅̅̅
𝐺𝑐𝑠 (𝑉) = ∑ 𝑝𝑖 (𝑉𝑖 )
𝑖=1

II. REALIZING MULTIBIT SYNAPSES USING BISTABLE RRAMS
In pair-wise STDP learning, spikes sent from pre- and postsynaptic have their voltage amplitudes below the positive and
negative switching thresholds (Vth+ and Vth-) of a bipolar
RRAM device. RRAM switching events may occur only if this
spike pair overlaps and creates a net potential (Vnet) greater
than the switch threshold, as illustrated in Fig.2A. When
several bistable RRAM devices are combined in parallel in a
crossbar configuration to realize a compound synapse with
multi-bit resolution, all the RRAMs in parallel will have a
same switching probability as a function of applied voltage, if
they are simply connected between two terminals.
To enable RRAM in the compound synapse with spiketiming-dependent switching probability, dendritic processing is
applied to the pre-synaptic neuron output as shown in Fig. 3B.
Here, a single-layer neural network is implemented in the
crossbar architecture with a RRAM device, as an electrical
synapse, connects pre- and post-synaptic neurons at each
crosspoint. The original spike waveform from the pre-synaptic
neuron runs through multiple dendritic branches before
reaching the binary synaptic devices, and the spike amplitudes

1
𝑅𝑂𝑁,𝑖

𝑛

+ ∑(1 − 𝑝𝑖 (𝑉𝑖 ))
𝑖=1

1
,
𝑅𝑂𝐹𝐹,𝑖

(1)

where pi is the SET switching probability of the ith device, and
RON and ROFF are the RRAM resistance at ON and OFF state
respectively. Generally, ROFF is greater than RON by several
orders of magnitude [19], and thus, can be neglected in overall
conductance. For simplicity, assuming RON of all devices is
same 1 and normalizing it to one, the probability of the
compound synapse equals the normalized conductance value 𝑔
is
𝑛

̅̅̅̅
𝑝(𝐺
𝑐𝑠 (𝑉) = 𝑔) = ∑ 𝑝𝑖 (𝑉𝑖 ).

(2)

𝑖=1

Above formula shows the synergy effect of parallel RRAMs
could approximate a nonlinear function if pi and Vi are not
linear at the same time. So, the proposed dendritic processing
provides a new dimension to manage the amplitude and timing
of spikes, the overall STDP learning curve now can be
designed to a desired shape more easily. This is enabled by the
key fact that the devices are operated in probabilistic switching
regime, and each device switches differently with respect to the
1

RON of a real RRAM could be stochastic as well. See an example in [19].

A

B

C

D

E

F

Fig. 3. STDP learning window created by compound binary resistive synapses with dendritic processing. (A) Pre-synaptic spike waveforms: Dendritic processing
attenuates the voltage amplitude of spike with factors from 0.5 to 1, and creates 16 parallel spikes. (B) Effective potential Veff over parallel devices versus the
relative arrival timing of post- and pre-synaptic spikes. 16 levels are created over Vth+ and Vth-. (C) The compound synapse shows an equivalent of 4-bit (16
levels) weight STDP leaning. Each dot represents a possible resistance value. (D) STDP window with dot density presenting the probability (with noise and
jitter). The double exponential curves fit well to the maximum values of probability. (E) Switching probability for the 16 devices versus the relative pre/post
timing (Δt). The asymmetric shape is created by dendritic processing on the pre-synaptic neuron only. (F) Probability as a function of relative timing of the
compound synapse at each of its conductance state. The state probability curves are spaced with each other in an increasing exponential manner.

time difference between the pre- and post-spikes (Δt)
𝑉𝑖 = 𝑓(∆𝑡).

(3)

In term of circuit realization, each dendritic branch is
implemented by adding an attenuator to the CMOS soma
output in a compact circuitry as shown in Fig. 3B. One of
several possible realizations is a resistor ladder followed by
source follower buffers. In detailed, noting the spike waveform
generated by the spike generator as Va+ and Va-, then the
dendritic processing generates n post- dendritic spikes
+
𝑉𝑝𝑑,𝑖
= 𝛼𝑖 𝑉𝑎+
{ −
,
𝑉𝑝𝑑,𝑖 = 𝛼𝑖 𝑉𝑎−

𝑖 = 1,2, ⋯ , 𝑛

(4)

where Vpd,i+ and Vpd,i- is the positive and negative amplitudes of
the ith post- dendritic spike, and αi is the attenuation factor of
the ith dendritic branch.
The CMOS soma could be implemented in an integrateand-fire circuits and winner-takes-all (WTA) mechanism in a
reconfigurable architecture based on single opamp, as
presented in [6]–[8]. In one configuration, the CMOS soma is
designed to provide a constant voltage at the neuron’s current
summing input, and then, allows reliable and linear spatiotemporal spike integration by charging membrane capacitor

with the flow-in currents converted by passive and resistive
synaptic devices. In another configuration, the CMOS soma
generates STDP- compatible spike and drives the spikes
propagating in both forward and backward directions with high
energy-efficiency. In the third configuration, this soma
circuitry supports local learning with many neurons organized
in a group and becomes selective to the input patterns through
competition and lateral inhibition with a shared WTA bus [7].
III. EXPIRIMENTAL RESULTS
The architecture is implemented and simulated in Python
2.7, and 10,000 epochs were performed for stochastic
simulation.
The stochastic switching of the RRAM synapse is modeled
by the cumulative probability of a Gaussian distribution as
experimentally demonstrated in [13]
𝑝(𝑉𝑛𝑒𝑡 ) = ∫

𝑉𝑛𝑒𝑡

0

1
√2𝜎 2 𝜋

𝑒

−(𝑥−𝑉𝑡ℎ )2
2𝜎 2

𝑑𝑥,

(5)

where p(Vnet) is the SET or RESET switching probability under
net potential Vnet applied across the two terminals of the
RRAM; Vth is the average threshold voltage, and σ is the

A

B

C

E

D

F

E

Fig. 4. STDP learning window created by compound binary resistive synapses without dendritic processing. (A) Pre-synaptic spike waveform. (B) Effective
potential Veff over parallel devices versus the relative arrival timing of post- and pre-synaptic spikes. (C) Equivalent 4-bit STDP leaning window. (D) STDP
window with dot density presenting the probability. The double linear curves fit to the maximum values of probability. (E) Switching probability of the 16
devices versus the Δt. (F) Probability of the compound synapse at each conductance state.

standard deviation of the distribution. Here, for demonstration
purpose we choose Vth+ = 1V and Vth- = -1V for the positive
and negative thresholds respectively, with σ = 0.1.
In simulation, a hardware-friendly spike waveform [4], [7]
is selected. This spike waveform has a constant positive shape
and a linearly rising negative tail, and has been demonstrated
on a CMOS neuron chip by the authors [6]. With a normalized
timescale, the positive tail has 0.9V amplitude and spans 1 time
unit; the negative tail has a peak amplitude of 0.4V and spans 5
time units. Attenuating factors (αi) of the dendritic attenuators
were set to values linearly spanning from 0.6 to 1. Using these
dendrites, 16 parallel spikes were generated as shown in Fig.
3A. These pre-synaptic spikes yield 16 positive and 16
negative levels in the STDP learning function that spans from 5 to 5 time units, as shown in Fig.3B.
Simulation results in Fig.3C shows the STDP learning
windows with normalized conductance changes, 𝑔, where each
dot represents a possible state of the synapse. It clearly
demonstrates an equivalent of 4-bits weight with 16 levels both
on the positive as well as negative sides of the STDP window.
Using each dot to represent the probability density of the state,
Fig.3D depicts the maximum likelihood state of the
conductance change under STDP learning, and now a double
exponential curve fits well to the simulated results. Here, each
dot represents the state of the conductance compound synapse

in the stochastic simulation. Mimicking the biological
measurements, Gaussian noise and jitters were added to the
synaptic change. The STDP learning shows a plateau when Δt
in the range of 0 to 1 because the switching probabilities of the
parallel devices are easier to saturate when only a portion of
the pre-synaptic spike’s tall positive tail overlaps with the postsynaptic spike’s negative tail. Ideally, this plateau can be
eliminated by using a very narrow positive tail for the spike
waveform which corresponds to faster switching characteristics
of the RRAM device.
Fig.3E further illustrates the asymmetry of the STDP
curves, which plot the individual switching probability of the
16 devices versus Δt. We can observe that the RRAMs’
switching probability curves are dense in the left-hand panel,
due to the smaller amplitude of the spike’s negative tail than its
positive tail. Dense probability curves yield narrow span of
their combined distribution, and are easier to saturate
especially when the positive tail of pre-spike partially
overlapping with the post-spike and creates a less change than
full overlapping to the net potential respecting to the Δt. In this
simulation, almost a half of the RRAM devices were saturated
from Δt = 0 to 1. Another view is shown in Fig.3F, which
depicts the probability of the compound synapse to occupy
each of the normalized conductance state. It shows the statewise probability curves are spaced with an increasing
exponential manner; while a significant dominating state of

𝑔 = 16 when Δt falls into the range of 0 to 1.
To provide a comparison of the proposed dendritic
approach with a simple compound synapse, the simulation
results of stochastic STDP learning without dendritic
processing is illustrated in Fig. 4. Although this achieves 4-bit
weight through STDP leaning, however, the STDP learning
curves are linear as shown in Fig. 4D due to the same
switching probability of all the devices in parallel as shown in
Fig. 4E. And the state-wise probability curves are equally
spaced as shown in Fig. 4F.

[6]

[7]

[8]

[9]

IV. CONCLUSION
The proposed compound synapse with dendritic processing
realizes exponential STDP learning similar to biology, while
using practically feasible bistable memory devices. This can
potentially enable ultra-low-power and significantly compact
machine learning hardware for large-scale spiking neural
networks that require plasticity with multibit resolution.
Immediate applications will include practical realization
ofspike-based convolutional neural networks and restricted
Boltzmann machines in a chip-scale form factor. This
architectural exploration using the proposed compound
probabilistic synapses can help benchmark the expected
behavior from the emerging RRAM devices; nanoscale RRAM
devices with large resistances will help realize lower power
consumption.
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