1

An Extended Analytic Model for the Heating of
Bondwires

arXiv:1709.10069v1 [] 28 Sep 2017

David Duque, Tomas Gotthans, Renaud Gillon, Sebastian Schöps

Abstract—We present an extended analytic formula for the
calculation of the temperature profile along a bondwire embedded
in a package. The resulting closed formula is built by coupling
the heat transfer equations of the bondwire and the surrounding
moulding compound by means of auxiliary variables that stem
from an ad-hoc linearisation and mediate the wire-mould thermal
interaction. The model, which corrects typical simplifications in
previously introduced analytic models, is also optimised against
carefully taken experimental samples representing fusing events
of bondwires within real packages.
Index Terms—Bondwires, heat equation, mould compound,
thermal conduction, thermal radiation, heat kernel, Green’s
function.

I. I NTRODUCTION

T

HE ever tightening specifications imposed on modern
integrated circuits (ICs) by the fast pacing semiconductor
industry demand the manufacturing of more energy-efficient
chips which are constantly smaller in size. These smartpower ICs must undergo and withstand a whole range of
electrostatic discharges (ESD), automotive pulses drive and
short-circuit tests which require high currents during short
times flowing through the electric connections. Therefore, a
good understanding of the interplay of the parameters defining
the time-to-failure in these tests is essential to realise costeffective, robust and fault-tolerant designs.
Among the techniques to establish electric connection between a chip and the lead frame (pins) during device assembly,
wire-bonding stands up as the most cost-effective one [1]–[5].
In wire-bonding, tiny and fine gold, aluminium, or copper
wires are used as electric path between the chip and its
package. As miniaturisation of the chips becomes inevitable,
the required diameter of the bondwires must also decrease.
Since the electric power to the chip must be supplied through
these wires, high current densities may occur that heat up the
wires causing a substantial increase of their temperature. If
the temperature exceeds a predefined value, damage of the
compound or bondwire melting are among the most common
source of failure in IC devices [3].
From the afore-described scenario, the need among package
engineers for an accurate formula that enables the fast dimensioning of bondwires and predicts their safe operation range
D. Duque and S. Schöps are with the Institut für Theorie Elektromagnetischer Felder of the Technische Universität Darmstadt, Schloßgartenstraße 8,
64289 Darmstadt, Germany.
T. Gothans is with the Department of Electrical Engineering of the Brno
University of Technology, Brno, Czech Republic.
R. Gillon is with ON Semiconductor Belgium b.v.b.a., Westerring 15, 9700
Oudenaarde, Belgium.

in a particular application is very important. Ideally, these calculations should be carried out expediently and must involve
all the parameters describing a package. Heretofore, several
simplified analytic formulas for the calculation of the heating
of bondwires and thus the estimation of their current capacities
have already been published [1]–[5]. However, most of these
formulas do not take into account the temperature dependency
of the wire parameters and introduced simplifications upon
the relevant heat transfer problem that the resulting solution
lacks all the geometric information defining the package. In
particular, in [1] by retaining the cylindrical symmetry of
the wire, the surrounding compound is also deformed into a
cylinder in order to facilitate coping with the heat boundary
conditions along the wire-compound interface and this is done
despite disregarding heat flow along the cross section of the
wire. At end, the model only accounts for radially outward heat
conduction through a cylindrical moulding compound of infinite extent and provides a loose treatment of the temperature
dependency of the wire parameters. More recently in [6], the
ideas presented in [1] are expanded. In particular, the moulding
compound is still deformed into a material of cylindrical shape
upon which on its outer surface either adiabatic or isothermal
boundary conditions are imposed. In this manner, a finite
cylindrical compound surrounding the wire is considered. The
model employs a coupling between the wire and compound
heat equations and solves them numerically providing thus the
flexibility of analysing current pulses of arbitrary shape. As
before, only radial outward heat conduction is accounted for.
and the geometric information of the package is again lost.
In this paper, we address these typical shortcomings by
developing yet an analytic formulation for the determination
of the temperature in bondwires. The more robust analytic
formula does involve the essential physical parameters that
define the package, i.e., moulding compound material and
dimensions, bond-wire characteristics, etc., by using an appropriate set of heat transfer boundary conditions (BCs) and
constructing the heat kernel of the compound section. The
model couples the wire and compound heat equations and
mediates the interaction between them. Subsequent validation
of the model is performed and optimisation with experimental
data is also carried out.
This paper is organised as follows: In Section II, we
formulate the heat transfer problem at hand together with the
relevant BCs. In Section III, we provide the solutions to the
stated thermal system and perform several numerical tests to
validate them. In Section IV, we describe the procedure for
optimising the model against experimental data, and also how
this data is acquired. This section ends with a comparison on

2

the perfomance of the model before and after optimisation.
Finally, in Section V, conclusions are given.
II. P ROBLEM F ORMULATION
A simple diagram of a classic IC lead-frame package is
depicted in Fig. 1. Because of the often complicate arrangeIC

wall, while the wire still remains at the lead temperature Tld ,
viz.
∂
−κm Tm (x, Lw , z, t) = 0, Tw (x, Lw , z, t) = Tld . (2)
∂y
Here, Tm is the compound temperature. On the leftmost wall
the IC or chip is adjacently located (see Fig. 1); thus we
assume a constant temperature Tch because of the chip high
thermal capacitance, viz.

Bond Wire

Tm (x, 0, z, t) = Tch ,

Lead

Fig. 1. Diagram of a classic IC lead-frame package.

ment of the conductors within the package, simplifications are
needed to formulate the relevant analytic heat transfer problem.
In Fig. 2 we depict a simplified parametrical bondwire heat
transfer problem. This problem consists of the rectangular
compound of height Hm and width Wm that defines the
package. The compound is characterised by a homogeneous
and isotropic thermal conductivity κm , specific heat ce;m , and
mass density ρm whose temperature dependence is neglected
for simplicity. Similarly, the bondwire of length Lw is characterised by a homogeneous and isotropic thermal conductivity
κw , specific heat ce;w , mass density ρw , and electric resistivity
ρe;w . The temperature dependence of κw and ρe;w is taken
into account in the calculation of the temperature Tw (x, y, z, t)
along the wire, viz.




κw (Tew ) := κo 1 + ακ Tew , ρe;w (Tew ) := ρe;0 1 + αρ Tew ,
(1)

Fig. 2. Alternative bondwire heat transfer problem.

(3)

On the lateral and top walls of the compound, we assume
convective heat transfer because of the background medium
[7], viz.




Hm
Hm
∂
, t = hc Tm (x, y,
, t) − T0 ) ,
−κm Tm x, y,
∂z
2
2




∂
Wm
Wm
−κm Tm ±
, y, z, t = hc Tm (±
, y, z, t) − T0 ) ,
∂x
2
2
(4)
where hc is the convective transfer coefficient [7]. On the
bottom wall, we assume a constant temperature Td imposed
by the die-attach (see Fig. 2), viz.


Hm
, t = Td .
(5)
Tm x, y, −
2
Finally on the wire surface Sw we assume that both thermal
conductivity and thermal radiation take place. The latter is
given by the Stefan-Boltzmann law [7]. Therefore upon the
wire-mould interface we state
Z
Z

− κw ∇T Tw · dS = THc + w σ Tw4 − T04 dS, (6)
Sw

with Tew ≡ Tw − T0 , T0 the reference (ambient) temperature,
ακ the temperature coefficient of the thermal conductivity, and
αρ the temperature coefficient of the electric resistivity. The
bondwire will be heated up, during a time tp , by the action
of an electric current i(t). We aim at determining the time
evolution of Tw .
To provide an analytic solution, we impose suitable boundary conditions (BCs) on the domain of interest Ω = [0, Wm ]×
[0, Lw ] × [0, Hm ]. Namely, on the rightmost wall, we require
that the heat flux mainly occurs through the wire itself (see
Fig. 2); therefore, an adiabatic condition is enforced upon this

Tw (x, 0, z, t) = Tch .

Sw

where ∇T Tw is the transverse gradient of the wire temperature,
that is the gradient along the xz-plane (see Fig. 2), THc just
denotes the conductive part of the thermal flux that occurs on
the wire surface, w is the wire emissivity [7], and σ is the
Stefan-Boltzmann constant [7].
A. Bondwire Heat Equation
The heat equation for a stationary wire of constant mass
density reads [7]
∂Tw
= ∇ · (κw ∇Tw ) + q̇i ,
(7)
∂t
where q̇i is the impressed volumetric thermal power density
within the wire. By expanding the above gradient operator as
∇ = ∂y ay + ∇T , with ay the unit vector along the y-axis, and
assuming that the Biot number [7] of the wire is small along
the xz-plane 1 , that is Tw mainly varies along the wire axis,
we may express (7) by means of (6) in a form that explicitly
involves the radiation condition, viz.


 Cw
∂
∂
∂
ρw ce;w Tw =
κw Tw − w σ Tw4 − T04
+ q̇i ,
∂t
∂y
∂y
Aw
(8)
ρw ce;w

1 This assumption can be made insofar as the transverse dimensions are
much smaller than the longitudinal dimension. A condition that is easily
satisfied by bondwires.

3

where Aw (y) and Cw (y) are the cross-section area and perimeter of the wire, respectively. In (8) we may think as if the
contribution of THc is apparently vanished. However, as we
will see in section III, the contribution of THc is again
accounted for with the introduction of a linearising constant
in the wire and compound heat equations.

which implies that θew = Tew + ακ /2 Tew2 and ∂y θew =
κw /κ0 ∂y Tew ; thus, enabling us to write (8) as
ρw ce;w

∂ e
1
∂2
θw = κo 2 θew − Fo;w;r θew + Go;w + Ho;w;r , (14)
∂t
∂y
2

with
Go;w =

B. Moulding Compound Heat Equation
The moulding compound heat equation in integral form
reads [7], [8]
Z
Z
Z
∂
ρm ce;m
Tm dV = κm ∇Tm · dS + κm ∇Tm · dS, (9)
∂t
Vm

Sw

S̃m

where Vm is the compound volume, Sw is the wire-compound
common interface, and S̃m is the compound remaining surface.
With the help of (6) and the low-Biot-number assumption, we
may express (9) as follows
Z
Z
∂
Tm dV = κm ∇Tm · dS+
ρm ce;m
∂t
Vm
S̃m
Z
 Cw
w σ Tw4 − T04
dV, (10)
Aw

Ho;w;r =


∂
Tm = κm ∇2 Tm + w σ Tw4 − T04 Cw δ(x)δ(z), (11)
∂t
where δ(.) is the Dirac delta [9]. Equation (11) is the heat
equation of the compound with the wire as an impressed
heat source, and its solution involves the heat kernel (Green’s
function) of the compound [10].
ρm ce;m

Fo;w;r = w σχw

Cw
,
Aw

Cw
2I02 ρe;o αρ Tew;e
2
+ w σχw
ακ Tew;e
,
A2w
Aw

(15)

and where we have approximated ∂t θew ≈ ∂t Tew so as to keep
linear the transient term in (14) and have introduced Tew;e as
an auxiliary constant dubbed the wire effective temperature.
We solve (14) by separation of variables with θew (y, t) =
θ̃w;1 (y, t) + θ̃w;2 (y), thus yielding
X
F
− κo λ2
t − o;w;r t
t
θ̃w (y, t) =
Cw;k;r
e ρw ce;w y;w,k e ρw ce;w sin (λy;w,k y)
k

r

Fo;w;r
y
κo

!

r

+

s
C1;y;w;r

+

1 Ho;w;r
Go;w
kπ
+
; λy;w,k =
, k > 0.
2 Fo;w;r
Fo;w;r
Lw

Vw

with Vw the wire volume. The above equation permits to regard
the problem at hand by one in which the wire is considered
infinitesimally thin. To this end, we take limAw →0 on (10);
thus, this can be written point-wise as follows

I02 ρe;o
,
A2w

cosh

+

s
C2;y;w;r

sinh

Fo;w;r
y
κo

(16)
t
s
s
Above, the coefficients {Cw;k;r
, C1;y;w;r
, C2;y;w;r
} are determined by means of the initial condition at t = 0 and the
relevant BCs in (2) and (3), respectively. We observe that
the auxiliary constants Tew;e and χw in (15) are yet to be
determined.

B. Moulding Compound Solution
Let us rewrite (11) with the help of χw , viz.
∂
Tm = κm ∇2 Tm + w σχw Tew Cw δ(x)δ(z).
(17)
∂t
We notice in (17) that if the impressed source were zero,
the compound temperature would be solely imposed by the
chip and die-attach temperatures (see Fig. 2). Once the
electric current is switched on, another temperature component superimpose. Let us denote by Tm the first of these
components and solve for it by defining Tem ≡ Tm − T0 ,
expanding Tem (x, y, z, t) = Tem;1 (x, y, z, t) + Tem;2;1 (x, y, z) +
Tem;2;2 (x, y, z), and substituting in (17) together with BCs
(2)–(5). The second component is obtained by means of the
compound heat kernel (Green’s function). In Appendix A, we
briefly describe how these component functions are exactly
determined.
Having calculated the aforementioned temperature components, the moulding compound temperature can be expressed
as
ρm ce;m

III. H EAT T RANSFER P ROBLEM S OLUTION
Equations (8) and (11) constitute a non-linear coupled
thermal system. In this section, we carry out the solution of
this system by means of an ad-hoc linearisation.
A. Bondwire Solution
We start by linearising the radiation term in (8) as follows

Tw4 − T04 = Tw3 + Tw2 T0 + Tw T02 + T03 (Tw − T0 )
(12)
≈ χw (Tw − T0 ) ,
with χw a constant. This approximation is reasonable insofar
as thermal radiation is not the heat transfer dominant term [7].
Therefore in this manner, with the introduction of the constant
χw we are globing in one both the contribution of conduction
and radiation to the thermal flux at the wire surface. Next, we
employ the following transformation


θew Tew



1
:=
κ0

ZTew
κw (s) ds,
0

(13)

Tm (x, y, z, t) = T0 + Tem;1 (x, y, z, t) + Tem;2;1 (x, y, z) +
Zt ZLw
e
Tm;2;2 (x, y, z)+
Gm (x, y, z, t − τ, y 0 ) q̇i (y 0 , τ ) dy 0 dτ,
0

0

!

4

q̇i (y 0 , τ ) = w σχw Tew (y 0 , τ ) Cw .

(18)
64

The above expression provides the temperature at any point
within the compound for any time-variant current. Both
auxiliary constants Tew;e and χw also appear in (18) within
Tew (y 0 , τ ). In Appendix B, we describe how these two constants are determined by mediating the thermal interaction
between the compound and the wire.

16

~

~

Temperature Tm;2;1

Temperature Tm;2;2

0.6

0.6

0.4

0.4
0

0

0.2

0.2

mm

0.0

mm

0.0

-0.2

-0.2

-0.4

-0.4

-0.6

-0.6

C. Numerical Test
We have implemented the afore-described model and
have performed numerical tests for Gold (Au), Copper
(Cu), and Aluminium (Al) wires of diameters Dw =
{0.8, 1.0, . . . , 1.8, 2.0} mil and length Lw = 2.5 mm. A
moulding compound with Wm = 4.45 mm and Hm =
1.48 mm, and made of an Epoxy resin with κm =
0.870 W/(m · K), ce;m = 882 J/(Kg · K), and ρm =
1860 kg/m3 is assumed.
To verify our solution, we compute Tm at the xy- and yzplanes (see Fig. 2) for an Au-wire of Dw = 2 mil, which
carries an electric current of I0 = 3.7 A during a time
tp = 500 ms. In concrete, we want verify the compound
temperature expansion coefficients (see Appendix A) when
satisfying the relevant BCs. We have also assumed herein that
Tch = 80 ◦ C, Tld = 40 ◦ C, Td = 35 ◦ C, T0 = 20 ◦ C, and
hc = 25 W/(m2 · K).

0.0

0.5

1.0

1.5

2.0

2.5

0.0

0.5

1.0

(a)

1.5

2.0

2.5

(b)
0

16

~
Temperature Tm;1

~
Temperature Tm;g

0.6

0.6

0.4

0.4
-24

-1

0.2

0.2

mm

0.0

-0.2

-0.4

-0.4

-0.6

-0.6

0.0

0.5

1.0

1.5

2.0

mm

0.0

-0.2

2.5

0.0

0.5

1.0

(c)

1.5

2.0

2.5

(d)
100

Temperature Tm
0.6

58

0
0.4

~

~

Temperature Tm;2

Temperature Tm;1

mm

mm

2.5

2.5

2.0

2.0

20
0.2

mm

0.0

-0.2

20

-18
-0.4

1.5

1.5

1.0

1.0

0.5

0.5

-0.6

0.0

0.0
-1

0

1

2

-2

-1

0

(a)

1

16

mm

mm
2.5

2.0

2.0
0

20

1.5

1.5

1.0

1.0

0.5

0.5

0.0

0.0
1

(c)

2.5

Temperature Tm

2.5

0

2.0

100

~

-1

1.5

Fig. 4. Compound temperature components at the yz-plane (side view) and
t = 500 ms; (a) steady Tem;2,1 component; (b) steady Tem;2,2 component;
(c) transient Tem;1 component; (d) heat kernel Tem;g component, (e) compound
temperature Tm . The Au-wire is depicted as a straight line.

2

(b)

Temperature Tm;g

-2

1.0

(e)

0.0
-2

0.5

2

-2

-1

0

1

2

(d)

Fig. 3. Compound temperature components at the xy-plane (top view) and
t = 500 ms; (a) steady Tem;2 = Tem;2,1 + Tem;2,2 component; (b) transient
Tem;1 component; (c) heat kernel Tem;g component; (d) compound temperature
Tm . The Au-wire is depicted as a straight line.

Fig. 3 and 4 show the plots of the temperature component
in (18) depicting the wire as a straight line. For example,

Fig. 3a shows a top-view plot of the steady component
Tem;2 = Tem;2,1 + Tem;2,2 , whereas Fig. 4a and 4b shows a
side-view plot of it separated into its constitutives Tm;2,1 and
Tm;2,2 . In particular Fig. 3a, 4a, and 4b show that the steady
component Tem;2 along the chip and die-attach planes satisfies
the required BCs in (34) and (35). Fig. 3b and 4c show the
plot of the transient component Tm;1 , and as we can note, this
component amounts to Tem;1 = 0 along the chip and die-attach
planes, thus verifying the required BCs in (34) and (35).
Fig. 3c and 4d shows the plot of the heat kernel component
Tem;g , that is the integral in (18). These plots suggest that heat
flux propagates radially away from the wire into the compound
and show a maximum that occurs at the wire mid-point while
two minima appear towards the extremes of the wire. We
also notice that this component is consistent with the required
BCs along the chip and die-attach planes, where it vanishes.

5

o

Finally in Fig. 3d and 4e, the combined action of all these
components; namely, the compound temperature Tm is plotted.
In particular, we can notice therein that Tm = Tch = 80 ◦ C
and Tm = Td = 35 ◦ C along the chip and die-attach planes as
demanded by the BCs. Furthermore, most of the compound
is slightly above the (ambient) temperature T0 = 20 ◦ C used
as the initial condition due to its low thermal conductivity.
Nevertheless, we may expect the compound to become hotter
as time progresses. It is important here to remark that Tm is
more an auxiliary scalar field that helps to estimate the effect
of the compound on the wire temperature, rather than the true
compound temperature.

o

C

o

800

-

Analytic Model
* - FEM Model
* Noebauer Model

80

70

***********
******************************
******************
************
**
**
**
***
*****

60

50 *****

**

*

*

*

*

*

20

30

40

50

ms

40
10

Fig. 6. Temperature Tw of the wire mid-point in time for a gold bondwire
of length Lw = 2.5 mm and diameter Dw = 2.0 mil. The current amplitude
amounts to I0 = 2 A.

C

IV. B ONDWIRE M ODEL O PTIMISATION

1200

.....................................................................................................

.....................................................................................................

C

90

1000

600
800
400

600
400

200
200
A
1

2

3

4

5

A

6

1

(a) Al-wire
o

As in any analytic model built upon simplifications, optimisation based on experimental data is necessary. In a real
package, where bondwires are tightly disposed, the overall
temperature distribution is governed by a non-linear thermoelectromagnetic coupling mechanism. Furthermore, the manufacturing imperfections, mould compound degradation, and
current-induced ageing of the wires add uncertainties that are
certainly not accounted for by a simplified analytic model.
Hence, to counteract the accumulated effect of these uncertainties in the accuracy of the model, we carry out parameter
optimisation in this section.

2

3

4

5

(b) Au-wire

C

1200

.....................................................................................................
1000
800
600

6

400
200
A
1

2

3

4

5

6

(c) Cu-wire
Fig. 5.
Bondwire current capacities for diameters Dw
=
{0.8, 1.0, . . . , 1.8, 2.0} mil and Lw = 2.5 mm; a) Al-wire; b) Auwire; c) Cu-wire. The horizontal dotted line indicates the melting
temperature.

Fig. 5 shows the estimated current capacity Tw vs I0 after a
time of 50 ms for Al-, Au-, and Cu-wires. The temperature Tw
plotted therein is at the wire mid-point. The results in Fig. 5
reveals current capacities lower than those estimated in [1]
under similar setting. In other words, for a given bondwire
configuration, the current amplitude in [1] that causes the
wire to fuse after a certain time is higher than the amplitude
estimated by our model. This seems to indicate a tendency
of the model in [1] to underestimate the temperature in
bondwires. Fig. 5 also demonstrates the capabilities of our
model to provide a safe range of operation for the bondwires
before melting and moulding deterioration is reached.
Fig. 6 shows the a comparison between our analytic model
and an implementation of Noebauer’s model [1]. For the
reference, we have also included the solution obtained via
a 3-D FEM simulation of the single bondwire heat problem
depicted in Fig. 1. Clearly, the model in [1] underestimates
the temperature profile. Similar results have been obtained
for the other wire materials, namely copper and aluminium.
Having verified numerically our solution, in the next section
we conduct the optimisation of our model.

A. Optimisation Problem Statement
Let us consider the bondwire model as a function Bw :

>
p × (I0 , tp ) 7−→ Tw with p = p1 , p2 , . . . , pNp ; namely
a mapping from a parameter space p into the temperature
Tw for a given pair (I0 , tp ) of the amplitude and duration of
the current. Experimentally, we have collected a set of data
{I0,i , tp,i }, with i = 1, . . . , Nd that represents fusing events,
that is the current amplitude I0 with duration tp that causes
a bondwire sample to fuse. In this optimisation we assume
that fusing occurs at the wire mid-point where the hottest spot
is expected [2], [3], [5]. In this manner, we define the model
residual Rw,i as follows

Rw,i (p) := |Tw;f − Bw p, I0,i , tp,i |2 ,

(19)

where Tw;f is  the corresponding fusing temperature, and
Bw p, I0,i , tp,i is the model estimation at the mid-point for
a given (I0,i , tp,i ). Hence, the total residual for a set of
experimental data will be

Rw

Nd
 X
p =
Rw,i (p)
i=1

>

= Tw − Bw p
· Tw − Bw p

>

>
>
= Tw · Tw − 2Tw · Bw p + Bw p · Bw p ,
(20)

6

with

with

 



Bw p, I0,1 , tp,1 
Tw;f
Tw;f 

 


 Bw p, I0,2 , tp,2 
Tw =  .  , Bw p = 
.
.
..
 .. 



Tw;f
Bw p, I0,Nd , tp,Nd

e
H
R

w ,uu

w

>

· VH
,uu
R

w

>

P · JRw

p

B. Parameter Sub-Set Identification
We solve for p? in (22) by using a Newton-Raphson method
[11] with an order reduction strategy that splits the space p
into well- and ill-conditioned parameters [12]–[14]. In this
manner, robust optimisation is accomplished.
The Newton-Raphson method for our multidimensional
optimisation problem is characterised by the system
HR · ∆p = −JRw ,

w

· ΣR
,uu

(21)

Here, we want to determine p? that minimises (20), viz.

(22)
p? ≡ arg min Rw p .

>

= VR

#
>
JRw ,u
,
= >
JRw ,l

where ∆p = pk+1 − pk is the difference between the next
estimation pk+1 and the actual one pk , JRw and HR are the
w
Jacobian and Hessian matrices of the residual [15] evaluated
at pk . Let us now assume that we have carried out the SVD
of HR and have ordered the singular values within ΣR in
w
w
decreasing order of magnitude. Then we nullify the entries of
the smallest singular values in ΣR so as to approximate
w
"
#
ΣR ,uu 0
e
w
ΣR ≈ ΣR =
,
(24)
w
w
0
0
that is we cancel out the diagonal sub-matrix ΣR

w ,ll

of smallest



∆e
pu
;
0

"

(28)

where we group and retain in (27) the entries corresponding to
the well-posed parameters, while setting constant the ill-posed
ones by stating that ∆e
pl = 0 in (28).
Finaly, we express JRw and HR in terms of JB and HB ;
w
w
w
namely, the Jacobian and Hessian matrices of the bondwire
model Bw . Further mathematical analysis shows that these
matrices are related as follows
 > 

>
JRw = 2 Bw p − Tw · JB ,
(29)
w

>

HR = 2JB · JB + 2
w

w

Nd
X

w



Bw p, I0,i , tp,i − Tw;f HB ,i .
w

i=1

(30)

(23)

w

>

; P · ∆p =
,uu

In the next section, we briefly describe the experimental
setup used to generate and measure the required bondwire
fusing events.
C. Experimental Setup
The experimental setup for the extraction of fusing events
and the dynamical parameters of the encapsulated bondwires
is described in this section. In Fig. 7 we show the schematic
of the so-called bondwire tester. The setup permits statistical
quantification of the current capabilities and fatigue of the
bondwires. All integrated circuits and Kelvin probes were
fabricated by ON-Semiconductor (Belgium).

e
determines the number
singular values, and the order of Σ
Rw
of well-conditioned parameters. Approximation (24) leads to
e =V
HR ≈ H
R
R
w

w

w ,1u

· ΣR

w ,uu

· VH
R

w ,u1

,

(25)

where VR ,1u is the matrix stemming from VR after canw
w
celling out the singular vectors associated with the nullified
singular values.
To identify the well-conditioned parameters of (23), we
perform the QR-decomposition (with permutation) of VH
Rw ,u1
[15], viz.
"
#
h
i
VR ,uu
>
H
H
H
w
VR ,u1 · P = VRw ,uu VRw ,ul ⇒ P · VR ,1u =
.
w
w
VR ,lu
|
{z
}
w
| {z }
Q·R
>

>

R ·Q

(26)
Above, the permutation matrix P swaps columns of VH
Rw ,u1
to split them into a set of linearly independent singular
vectors VH
and a set of linearly dependent singular vectors
Rw ,uu
H
VR ,ul . This splitting permits to separate the set of well-posed
w
parameters from the ill-posed ones. Identities (25) and (26)
lead to the sought reduced counterpart of (23), viz.
e
H
R

w ,uu

>

· ∆e
pu = −JRw ,u ,

(27)

Fig. 7. Schematic of the bondwire tester.

The tester consists of a power supply (16 V and 60 A), a
test interface (custom made board), a personal computer (with
MATLABTM ), and a data acquisition card (DAQ) (National
Instruments 6251) capable of capturing 1 MS/s multichannel,
16 bit resolution and with a voltage range of ±10 V. The test
interface consists of six power channels (for six bondwire

7

pairs). To avoid using 12 acquisition channels, each channel
is addressed by demultiplexing the driving signal to a specific
bondwire. Thus, the current flowing through and the voltage
drop along the bondwire are sensed, amplified, and multiplexed to outputs which are digitised by a NI card and thus
returned back to the computer.

damage of the external A/D converter when used in a sensitive
range.
In Fig. 9 we show a selected screenshot of a fusing event
that does not translate immediately into an open circuit.
Various degradation processes have been identified with the
delayed time-base features of the oscilloscope.

Fig. 8. Details of VRsens and VKelvin captured with the oscilloscope.

In general, the experimental setup can be divided into two
parts, namely the software which directly controls the NI
card and consequently the tester, and the printed circuit board
(PCB) of the tester with the multichannel switching power
source. Each bondwire is addressed by the analog multiplexer
(HCF4051BE) upon selecting the required channel among six
possibilities. The PCB contains six power switches (MOSFET
transistors IRFZ044); the same amount of amplifiers are connected to the bondwires via Kelvin probes. The amplifiers have
differential voltage inputs and non-symmetric outputs with a
digitally controlled gain (see Fig. 7). Since a high final gain
is required, a two-stage cascade connection is employed. Up
to four bits, which are directly set via a MATLAB script, can
be used to set the final gain factor.

Fig. 10. Example of an X-ray picture of a single package.

In Fig. 10 we show an X-ray picture of a sample package.
Each sample package consists of 6 pairs of bondwires as
enumerated in the picture. The length of each (in mm) is also
indicated therein. A fusing event is induced by using a long
duration pulse. The characteristics of the pulse are controlled
by the power supply Manson (capable of delivering up to
60 A at 16 V) in order to obtain certain amount of current
flowing through the bondwire. The time required to fuse the
bondwire is measured and the results are then provided for all
available types, that is material, diameter, and position within
the package.
D. Optimisation Results

Fig. 9. Dynamic behaviour after fusing of the bondwire.

To amplify the voltage VKelvin sensed by the probes (see
Fig. 7), a high-gain stage (AD8253 PGA) with gain ∈
{1, 10, 100, 1000} is combined with an integrated circuit
(AD8250) whose gain ∈ {1, 2, 5, 10}. All power transistors
have their sources connected to a single sensing resistance of
1 Ω (50 W) that measures the voltage drop VRsens inasmuch
as the dominant current will always come from the branch
of the active bondwire, while contributions from the other
wires are negligible. Additionally a ringing snubber is added
to compensate overshoots created by switching of an inductive
load. The time evolution of VKelvin and VRsens is monitored with
the oscilloscope (see Fig. 8). In parallel to the outputs VRsens
and VKelvin , Zener diodes (voltage limiters) are used to avoid

In this section we apply the afore-described parameter
sub-set identification method to carry out the optimisation
of the bondwire model. As stated before, each bondwire
sample within a package (see Fig. 10) is characterised by
a set of data points representing fusing events. Each fusing
event corresponds to a pair {I0,i , tp,i } representing the current
amplitude I0,i that for given time tp,i fuses the wire. In total
1077 bondwire samples within their package were deliberately
fused in the data collection phase. Each data set is then filtered
by means of a histogram to generate a sequence of smoother
pairs {I¯0,i , t̄p,i } that are used in the optimisation. Fig. 11
shows two examples of the resulting filtered data {I¯0,i , t̄p,i } for
Au- and Cu-wires of diameters 1.0 mil and 2.0 mil at position
1 in the package (see Fig. 10).
Similar data is obtained for the bondwires at the other
positions within the package. In Table. I and II, we collect
the nominal geometric, electric, and thermic values of the
bondwires. The nominal diameter D̄w were provided by the
package manufacturer, while the nominal length L̄w has been
obtained through averaging of the length measured via the xray scanning (see Fig. 10) and the length inferred from the
lead-frame data-sheet.

5

9

4.5

8.5

4

Current I0 [A]

Current I0 [A]

8

3.5
3

8
7.5
7

•

6.5

2.5

6

2
0

2

4
Time tp [s]

6

5.5
0

8

10

20
Time tp [s]

(a)

30

TABLE I
G EOMETRIC CHARACTERISTICS OF THE BONDWIRES WITHIN A PACKAGE .
T HE NOMINAL D̄W AND L̄W ARE GIVEN IN [mil] AND [mm].

L̄w [mm]

Cu-wire
1.3 mil
3.445
2.160
3.458
3.469
2.126
3.434

2.0 mil
3.450
2.160
3.458
3.469
2.126
3.434

Au-wire
1.0 mil
1.712
1.226
1.889
1.938
1.369
1.827

1
2
3
4
5
6

N OMINAL ELECTRIC AND THERMIC CHARACTERISTICS OF THE
BONDWIRES .
Elec
ρ̄e;o [Ω.m]
1
ᾱρ [ K
]
Therm
Kg
ρ̄w [ m
3]
W
]
κ̄o [ (m.K)

Cu-wire
1.678.10−8
3.862.10−3

Au-wire
2.214.10−8
3.400.10−3

8960
398

19300
315

1
ᾱκ [ K
]
J
]
c̄e;w [ Kg.K
¯w
T̄ch [K]
T̄ld [K]

−4.675.10−4
353
3.750.10−2
300.5
300.5

−2.744.10−4
129
2.475.10−1
300.5
300.5

The electric and thermic values collected in Table II are
standard for these materials [16]. In particular, the value
adopted for the emissivity ¯w corresponds to polished copper
and gold wires; nevertheless, for bondwires that are embedded
in real packages, this polishness might not be the case.
These values, together with the filtered data {I¯0,i , t̄p,i }, are
substituted in (29)–(30) whence the well-posed parameters are
established as explained above. In carrying out the optimisation of these parameters, we have adhered to the following
principles stemming from the physicality of the problem.

•

•

TABLE III
OVERALL AVERAGE VARIATION AFTER OPTIMISATION OF THE
PARAMETERS DEFINING THE BONDWIRE MODEL .

Pos

TABLE II

•

•

(b)

Fig. 11. Experimental filtered data {I¯0,i , t̄p,i } for gold and copper bondwires
at position 1 in a package. (a) Au-wire of Lw = 1.712 mm and Dw =
1.0 mil; (b) Cu-wire of Lw = 3.450 mm and Dw = 2.0 mil.

1.0 mil
2.025
1.267
1.696
1.670
1.114
1.884

40

This is done to accommodate for the actual temperature
increase these two bodies may undergo during a fusing
event. This increase of temperature is certainly not negligible for fusing events characterised by long times to
fuse.
The dimensions of the moulding compound section
around a bondwire at a given position, as required by the
model, are directly taken from the package dimensions.
The convective coefficient hc is assumed to be for air
at normal conditions given that no special fluid dynamic
condition in the room was expected.
The remaining parameters are allowed to vary freely in
a interval that makes physical sense, e.g., the emissivity
is such that 0 < w ≤ 1, while αρ ≥ 0 and ακ ≤ 0.

The bondwire length Lw and diameter Dw are always
allowed to vary up to 30% around their nominal values.
This relative variation is the add up of the manufacturing
tolerance, the tolerance in the x-ray scanning, the tolerance in the data-sheet, and a margin of safety.
The chip and lead temperatures Tch and Tld , although
fixed as isothermal boundary conditions within the model,
are allowed to vary up to 50% above their nominal values.

Geom
∆D̄w
∆L̄w
Elec
∆ρ̄e;o
∆ᾱρ
Therm
∆ρ̄w
∆κ̄o
∆ᾱκ
∆c̄e;w
∆¯
w
∆T̄ch
∆T̄ld

1.0 mil
−17.53%
12.88%

Cu-wire
1.3 mil
5.88%
−16.06%

2.0 mil
−20.39%
20.33%

Au-wire
1.0 mil
−26.98%
−3.92%

−14.76%
3.31%

106.63%
−48.17%

7.22%
1.05%

2.95%
−21.07%

−18.54%
−18.75%

24.57%
−21.74%

144.43%
16.91%
36.42%
126.04%
390.81%
19.73%
30.82%

142.44%
0.00%
−22.64%
298.23%
−32.48%
10.00%
18.33%

341.53%
−15.00%
−322.67%
125.96%
168.22%
24.17%
34.17%

181.43%
−20.83%
−23.85%
187.63%
12.99%
30.00%
35.83%

202.46%
−4.73%
−83.19%
184.47%
134.89%
20.98%
29.79%

∆tot

TABLE IV
N OMINAL ELECTRIC AND THERMIC CHARACTERISTICS OF THE
BONDWIRES WITHIN THE PACKAGE .

εtBw
εsBw

1.0 mil
31.52%
19.78%

Cu-wire
1.3 mil
21.70%
24.31%

2.0 mil
27.83%
12.88%

Au-wire
1.0 mil
35.87%
24.22%

29.23%
20.30%

ε?t
Bw
ε?s
Bw

6.95%
3.90%

3.26%
4.88%

3.26%
2.14%

8.81%
11.16%

5.57%
5.52%

ε tot

In Table III we have collected the average relative variation,
with respect to their nominal values, of the parameters defining
the bondwire model after optimisation. The variations are the
average for each bondwire regardless of its position within
the package. The overall total variation is given in the last
column of the table. As we may see, all parameters undergo
variations because the set of well-posed parameters, i.e., the
parameters to be optimised, can be different from one data set
to the other. Consequently, the parameters that are optimised
for a bondwire at a given position may become the ill-posed
ones for the bondwire at the next position.
As to the actual values of the variations, we first notice
that the geometric parameters of the wire; namely its diameter
and length, do not suffer major changes with respect to
their nominal values. This implies that the model retains the
physicality of the problem in this respect. Next, we start

9

by recalling that the bondwire temperature formula in (16)
consist of two distinguishable components; the first θ̃w;2 (y)
that accounts for the steady regime of the temperature, and
second θ̃w;1 (y, t) that gives account of the transient. By
inspection of the corresponding formulas, we may identify
which parameters play predominant roles in either regime.
For instance, the parameters {ρw , ce;w } have only influence on
the transient (cf. (7)), whereas {κo , ακ , ρe;w , αρ , Tch , Tld } have
mostly influence on the steady regime. Owing to the simplified
configuration of the model and the dynamics of these two
regimes in a real package, we may expect the model to yield
better temperature estimations in the steady regime than in the
transient. This fact manifest in the relatively high variation of
{ρw , ce;w } with respect to their nominal values as compared
with the variation of {κo , ακ , ρe;w , αρ , Tch , Tld }. With regard
to the wire emissivity w , the overall high relative increase
confirms that the assumption of polished wires is not a good
initial guess.
To report on the accuracy of the model before and after
optimisation, in Table IV we collect the average relative error
of the model. The error therein is the average of the normalised
residual (cf. (20)) for all bondwires regardless of their position
within the package. We have split the error into the component
εtBw that quantifies the error in the transient, and the component
εsBw that does so in the steady regime. This splitting can be
done by noticing in (16) that any fusing event occurring at
a time less or equal than the relevant time constant is likely
in the transient. The results in Table IV confirms what has
been already inferred from Table III, that is the model yields
better estimations for long time excitations. In general, the
performance of the model before optimisation is pretty good,
and is greatly improved with the optimisation.
V. C ONCLUSION
We have presented an extended analytic formula for the estimation of the heating of bondwires within real packages. The
model retains the the shape and dimensions of the moulding
compound surrounding the wire and imposes suitable boundary conditions for the temperature distribution. To yield the
temperature along the wire, the model couples the heat transfer
equations of both the wire and the compound by means of
effective transfer coefficients that stems from the linearisation
of the thermal radiation term on the wire surface. The resulting
wire temperature formula consists of simple basic functions
that make it suitable for a fast implementation into a numerical
calculator. The model has also been optimised with a series
of experimental measurements representing fusing events. The
idea upon which the formula is built can be certainly extended
to handle several bondwires in a package. This would entail
defining as many effective transfer coefficients as bondwires.
A PPENDIX A
M OULDING C OMPOUND T EMPERATURE F UNCTIONS AND
H EAT K ERNEL

nent Tem (x, y, z, t) = Tem;1 (x, y, z, t) + Tem;2;1 (x, y, z) +
Tem;2;2 (x, y, z) must satisfy
ρm ce;m

(31)

Owing to their definition and the yz-plane of symmetry in
Fig. 2, these components are subject to the following BCs




∂
Hm
Hm
−κm Tem;1 x, y,
, t = hc Tem;1 x, y,
,t ;
∂z
2
2




∂ e
Hm
H
m
e
−κm Tm;2,1 x, y,
= hc Tm;2,1 x, y,
; (32)
∂z
2
2




∂
Hm
Hm
−κm Tem;2,2 x, y,
= hc Tem;2,2 x, y,
;
∂z
2
2




∂ e
Wm
Wm
e
−κm Tm;1
, y, z, t = hc Tm;1
, y, z, t ;
∂x
2
2




Wm
∂ e
Wm
e
, y, z = hc Tm;2,1
, y, z ; (33)
−κm Tm;2,1
∂x
2
2




∂
Wm
Wm
−κm Tem;2,2
, y, z = hc Tem;2,2
, y, z ;
∂x
2
2
∂ e
Tm;1 (x, Lw , z, t) = 0;
∂y
∂
Tem;2,1 (x, 0, z) = Tch − T0 ; −κm Tem;2,1 (x, Lw , z) = 0;
∂y
(34)
∂
Tem;2,2 (x, 0, z) = 0;
−κm Tem;2,2 (x, Lw , z) = 0;
∂y
−κm

Tem;1 (x, 0, z, t) = 0;



∂ e
Hm
e
Tm;1 (0, y, z, t) = 0; Tm;1 x, y, −
, t = 0;
∂x
2


∂ e
Hm
Tm;2,1 (0, y, z) = 0; Tem;2,1 x, y, −
= 0;
(35)
∂x
2


∂ e
Hm
Tm;2,2 (0, y, z) = 0; Tem;2,2 x, y, −
= Td − T0 .
∂x
2
Thus, by applying the method of separation of variables, we
arrive at
XXX
λ2
+λ2
+λ2
t
− κm
t
Tem;1 =
Cm;n,m,p
e ρm ce;m ( x;m,n y;m,m z;m,p )
n

m

p





cos (λx;m,n x) sin (λy;m,m y) sin λz;m,p

Tem;2,1 =

XX
n

XX

s
Cm;2;n,m

m

−λz;m;n,m (z−Hm )

e


, (36)

p

cos (λx;m,n x) sin λz;m,p

Tem;2,2 =

Hm
z+
2



s
Cm;1;n,p
eλy;m;n,p y 1 + e2λy;m;n,p (Lw −y)


n

Here, the functions comprising the compound temperature expression of (18) are derived. The compo-

∂ Tem
= κm ∇2 Tem .
∂t





Hm
z+
2


, (37)


(hc + κm λz;m;n,m )
eλz;m;n,m z +
(κm λz;m;n,m − hc )

cos (λx;m,n x) sin (λy;m,m y) ,

(38)

10

where λx;m,n , λy;m,m , and λz;m,p are solutions of the characteristic equations


Wm
hc
hc
λx;m,n tan λx;m,n
=
, λz;m,p cot (λz;m,p Hm ) = − ,
2
κm
κm
(2m + 1) π
, m ≥ 0;
2Lw
whereas λy;m,n,p , and λz;m,n,m are given by
λy;m,m =

(39)

λ2y;m,n,p = λ2x;m,n + λ2z;m,p , λ2z;m,n,m = λ2x;m,n + λ2y;m,m .
(40)
 t
s
s
Finally, the coefficients Cm;n,m,p , Cm;1;n,p
, Cm;2;n,m
are
determined by the initial condition at t = 0 and the relevant
BCs in (34) and (35).
The compound heat kernel Gm is calculated similarly. That
e m ≡ Gm − T0 , and expand G
em = G
e m;1 +
is, we define G
e
e
Gm;2,1 + Gm;2,2 , and thus by recalling that Gm for t > 0
satisfies
∂
ρm ce;m Gm (x, y, z, t, y 0 ) = κm ∇2 Gm (x, y, z, t, y 0 ) , (41)
∂t
e m;1 , G
e m;2,1 ,
it is not difficult to realise that the components G
e
and Gm;2,2 adopt
similar to those in (36)–(38) with
 t expressions
s
s
, Cg;1;n,p
, Cg;2;n,m
, respectively. These
coefficients Cg;n,m,p
s
coefficients are also obtained as before; for instance, Cg;1;n,p
s
and Cg;2;n,m are obtained by replacing Tch − T0 and Td − T0
with −T0 in the corresponding BCs of (34) and (35), while
t
is obtained by considering
the transient coefficient Cg;n,m,p
(41) around t = 0 where the impulse source q̇i = δ(x)δ(y −
t
y 0 )δ(z)δ(t) is defined. Therefore, it is the constant Cg;n,m,p
0
that carries the dependence on y associated with the Green’s
function.
A PPENDIX B
D ETERMINATION OF THE M ODEL AUXILIARY C ONSTANTS
The constants Tew;e and χw are introduced in the model as
consequence of the adopted linearisation. Strictly speaking,
the actual wire effective temperature is the average of the
wire exact temperature distribution. In the model, however,
this value has become an auxiliary source term together with
the wire-compound effective heat transfer coefficient χw .
For starters, we realise that these auxiliary two constants
do not allow us, as inferred from (16) and (18), to impose
rigorously Tw = Tm ; ∀y, ∀t at the common interface (see
Fig. 2), and yet by introducing them, we facilitate accounting
for the thermal interaction between the compound and the
wire. Having said this, we are still allowed to state
Ztp ZLw

Ztp ZLw
lim lim Tem (x, y, z, t) dydt =

Tew (y, t) dydt.

z→0 x→0
0

0

0

0

(42)
along the wire-compound interface. Such a condition holds
true always, and it enables us to set an equation for computing
Tew;e and χw in an iterative manner. Namely, at start we
(0)
compute an effective wire temperature Tew;e as if there were no
(0)
compound. Subsequently, a value χw is obtained from (42)
(0)
e
by plugging Tw;e in (16) and (18); these two initial values of

the constants are used to compute a new effective temperature
(1)
(1)
Tew;e from (16), which in turn is used to derive χw from (42)
(i)
(i)
again. This procedure is repeated until the pair {Tew;e , χw }
stabilises. An important observation to keep in mind during
the iterations is that the following constraint should hold true
(i)
(i)
for every computed pair {Tew;e , χw }
(i)
Tew;e
<

2I02 ρe;0 αρ
(i)

w σχw Aw Cw |ακ |

.

(43)

This inequality stems from the very definition of these auxiliary constants and is readily obtained from (15).
ACKNOWLEDGMENT
The work in this article was carried out within the framework of the NanoCops project and the authors would like to
acknowledge its financial support. The authors would also like
to thank the Czech Ministry of Education for its financial
support through the National Sustainability program under
grant LO1401. During this research the infrastructure of the
SIX Center was used. Special thanks goes as well to Jiri
Petrzela and Roman Sotner of the Brno University of Technology for conducting some of the measurements retrieving
the experimental data used in the optimisation.
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