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Patent US5182620 - Active matrix display device - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsAn active matrix display includes pixel electrodes (4) which are formed over an insulating layer (17). The insulating layer (17) covers signal lines (2) which supply an image signal and also connect one pixel electrode (4) with another. The insulating layer (17) also covers an additional capacitor common...http://www.google.com/patents/US5182620?utm_source=gb-gplus-sharePatent US5182620 - Active matrix display deviceAdvanced Patent SearchPublication numberUS5182620 APublication typeGrantApplication numberUS 07/678,077Publication dateJan 26, 1993Filing dateApr 2, 1991Priority dateApr 5, 1990Fee statusPaidAlso published asDE69120329D1, DE69120329T2, EP0450941A2, EP0450941A3, EP0450941B1Publication number07678077, 678077, US 5182620 A, US 5182620A, US-A-5182620, US5182620 A, US5182620AInventorsTakayuki Shimada, Yasuhiro Matsushima, Yutaka TakafujiOriginal AssigneeSharp Kabushiki KaishaExport CitationBiBTeX, EndNote, RefManPatent Citations (5), Non-Patent Citations (4), Referenced by (202), Classifications (22), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetActive matrix display deviceUS 5182620 AAbstract An active matrix display includes pixel electrodes (4) which are formed over an insulating layer (17). The insulating layer (17) covers signal lines (2) which supply an image signal and also connect one pixel electrode (4) with another. The insulating layer (17) also covers an additional capacitor common line (8). The pixel electrodes (4) at least partially overlay the signal lines (2) and the additional capacitor common line (8), thereby achieving a larger numerical aperture for the display.
What is claimed is: 1. An active matrix display device comprising:an insulated substrate; a semiconductor layer covering the substrate; a first insulating layer covering the semiconductor layer; a gate electrode and a capacitor electrode formed on the first insulating layer; a second insulating layer covering the first insulating layer and the gate electrode and capacitor electrode formed on the first insulating layer; a signal line for carrying an image signal formed on the second insulating layer and extending through holes in the second insulating layer and the first insulating layer for connection to the semiconductor layer which covers the substrate; a third insulating layer covering the second insulating layer and the signal line formed on the second insulating layer; and a pixel electrode formed on the third insulating layer. 2. An active matrix display device comprising:an insulated substrate; a semiconductor layer covering the substrate; a first insulating layer covering the semiconductor layer; a gate electrode and a capacitor electrode formed on the first insulating layer; a second insulating layer covering the first insulating layer and the gate electrode and capacitor electrode formed on the first insulating layer; a signal line for carrying an image signal formed on the second insulating layer and extending through holes in the second insulating layer and the first insulating layer for connection to the semiconductor layer which covers the substrate; a third insulating layer covering the second insulating layer and the signal line formed on the second insulating layer; a pixel electrode formed on the third insulating layer, the pixel electrode being connected through holes in the first, second, and third insulating layers for connection to the semiconductor layer which covers the substrate. 3. An active matrix display device according to claims 2 or 1, wherein the insulated substrate comprises a stagger type thin film transistor including the semiconductor layer, the first insulating layer, and the gate electrode formed thereon, the thin film transistor having a source region connected to the signal line, and a drain region connected to the pixel electrode.
4. An active matrix display according to claims 2 or 1, wherein the pixel electrode extends over the third insulating layer so as to extend at least partially over the signal line formed beneath the third insulating layer.
5. An active matrix display according to claims 2 or 1, wherein the signal line is formed with a low resistance material.
6. An active matrix display according to claims 2 or 1, further comprising a common capacitor line formed on the second insulating layer and extending through a hole in the second insulating layer for connection to a capacitor electrode, the common capacitor line being covered by the third insulating layer.
7. An active matrix display according to claim 6, wherein the pixel electrode extends over the third insulating layer so as to extend at least partially over the common capacitor line formed beneath the third insulating layer.
RELATED APPLICATIONS This application is related to our commonly assigned U.S. patent application Ser. No. 07/615,949 filed Nov. 20, 1990 entitled "An Active Matrix Display Device" and naming Shimada et al as inventors. Said prior application is hereby incorporated by reference.
The present invention relates to an active matrix display device, and more particularly to an active matrix display device employing a switching device such as a thin film transistor (hereinafter called "TFT"), and using liquid crystal for a display medium.
Recently, research on active matrix display devices using liquid crystals for a display medium is keenly in progress, among which special attention is focused on the development of liquid crystal display devices (hereinafter called "LCD") so as to find applications in planar display devices. Such research is producing successful models. At present the research on active matrix LCDs are divided into at least two types depending upon the objects: one is to achieve a large display screen usable for a wall-hung TV display, and the other is to achieve a high-precision display screen. A high-precision, small-size display screen is particularly in strong demand so as to achieve a color view finder for video cameras.
The active matrix LCD is provided with IC chips for driving a TFT array. In high-precision, small-size active matrix LCDs the terminals are provided at such small distances so as to make it difficult to mount IC chips thereon. To overcome this difficulty, a TFT array is formed on the substrate for constituting a driving circuit.
Referring to FIG. 4, a basic structure of an active matrix display device using a driving circuit and a TFT array both formed on the same substrate will be described. On a substrate 50 are disposed a gate driving circuit 54, a source driving circuit 55, and a TFT array section 53 in which multiple gate buses 51 in parallel extend from the gate driving circuit 54. Multiple source buses 52 from the source driving circuit 55 cross the gate buses 51 at right angles. In parallel with the source bus 52, an additional capacitor common line 59 is disposed.
A rectangular region enclosed by the source buses 52, the gate buses 51 and the additional capacitor common line 59 includes the TFT 56, pixels 57 and additional capacitors 58. The gate electrode of the TFT 56 is connected to the gate bus 51, and the source electrode is connected to the source bus 52. Liquid crystal is confined in between the pixel electrode connected to the drain electrode of the TFT 56 and the counter electrode on the substrate so as to constitute pixels 57. An additional capacitor 58 is disposed between the TFT 56 and the additional capacitor common line 59. The additional capacitor common line 59 is connected to an electrode having the same potential as that of the counter electrode.
In this type of display the gate driving circuit 54 generates a signal in response to which the TFT 56 connected to the gate bus 51 is turned on. The source driving circuit 55 sends an image signal to the pixels 57 through the source bus 52. After the TFT 56 is off, the image signal is retained between the pixel electrodes and the counter electrode. Since a high-precision, small-size active matrix LCD has pixels having a reduced area, the capacitance between the pixel electrodes and the counter electrodes becomes small. As a result, the image signal cannot be retained for a required period of time. In addition, the potential of the bus varies in large amplitude, thereby failing to match with the potential of the pixel electrode. To make up for the insufficient capacitance, the additional capacitors 58 are provided in parallel with the pixels 57. One of the terminals of each capacitor 58 is connected to the drain electrode of the TFT 56, and the other terminal is connected to an electrode having the same potential as that of the counter electrode through the additional capacitor common line 59 so as to equalize the potentials between the other terminal of the TFT 56 and the counter electrode.
The active matrix display devices incorporating the driving circuit as a unit uses polysilicon for a semiconductor layer of the TFT because of the high degree of mobility of electrons and holes, and of the possibility of fabricating n-type TFTs and p-type TFTs, thereby making it possible to constitute a CMOS construction.
This type of active matrix display device is disadvantageous in that the provision of additional capacitors reduces the effective area for the pixel electrodes, thereby lowering the numerical aperture of the display panel as a whole. In order to solve the problem of the reduced numerical aperture, and avoid the occurrence of delayed signals, Japanese Laid-Open Patent Publication No. 1-304402 proposes an active matrix display device, which includes an additional capacitor common line.
Referring to FIGS. 5 and 6, this known display device will be described to explain the background of the present invention:
A polysilicon layer is formed on a glass substrate 11 by a known method such as a CVD method and a sputtering method. The resulting polysilicone layer is patterned so as to form a semiconductor layer 12 and a lower capacitor electrode 5. Then a gate insulating layer 13 is formed by a CVD method or by thermally oxidizing the surface of the polysilicon layer. The lower capacitor electrode 5 is subjected to doping by an ion implantation method so as to make it a low resistance capacitor electrode.
The gate bus 1, the gate electrodes 3a and 3b, and upper capacitor electrode 6 are formed with n-type or p-type polysilicon. The additional capacitor 27 is formed between the upper capacitor electrode 6 and the lower capacitor electrode 5. Under the mask of the gate electrodes 3a and 3b, and a resist formed by photolithography, lower parts below the gate electrodes 3a and 3b of the semiconductor layer 12 are subjected to ion implantation. In this way the source and drain region of the TFT is formed as a self-alignment structure.
An insulating layer 14 is formed on the whole surface of the substrate 11.
Referring now to FIG. 5, three contact holes 7a, 7b and 7c are formed. The contact holes 7a and 7b extend through the insulating layer 14 and the gate insulating layer 13, and are open on the semiconductor layer 12 and the lower capacitor electrode 5.
Next, the source bus 2 and the additional capacitor common line 8 are simultaneously formed with a low-resistance metal such as aluminum. As shown in FIG. 5, the source bus 2 is formed such that it expands on the contact hole 7a, and the additional capacitor common line 8 is formed such that it expands on the contact hole 7c. The source bus 2 is connected to the semiconductor layer 12 through the contact hole 7a, and the additional capacitor common line 8 is connected to the upper capacitor electrode 6 through the contact hole 7c. The additional capacitor common line 8 is connected to an electrode having the same potential as that of the counter electrode on the counter substrate.
FIG. 5 further illustrates that a pixel electrode 4 of Indium Tin Oxide (ITO) is patterned. Part of the pixel electrode 4 extends through the contact hole 7b, thereby connecting the pixel electrode 4 to the semiconductor layer 12 through the contact hole 7b. The whole surface of the substrate 11 is covered with a protective layer 15.
The additional capacitor 27 has a thin gate insulating layer 13 between the upper capacitor electrode 6 and the lower capacitor electrode 5, thereby increasing the capacitance of the additional capacitor 27 per unit area. Thus, the area occupied by the additional capacitor 27 is advantageously minimized, thereby preventing the numerical aperture of the display panel from being reduced.
In order to enhance the high-precision display, it is necessary to minimize the size of the pixel electrodes. However, if the size of the pixel electrodes is reduced beyond a particular limit, the spacing of the gate bus 1 and the source bus 2, the size of the TFT 25a and 25b cannot be shortened any more. As a result, the numerical aperture of the display panel becomes low, thereby resulting in a dark image picture.
The brightness of the image picture on the display screen is not always proportional to the area of the pixel electrodes 4. The liquid crystal layer positioning on the pixel electrodes 4 unavoidably has an electric field whose intensity depends upon the degree of display, and the molecules therein are orientated by the electric field, but the liquid crystal positioning off the pixel electrodes 4 has no electric field, so that the molecules are in disorder. In the twisted nematic mode that is currently in most common use, the normal-white system is used because it is least liable to birefringent when an image picture is represented white. Under the normal-white system the "white" representation occurs in other area having no electric field than the pixel electrodes 4. As a result, the contrast ratio decreases. In order to prevent reduction in the contrast ratio, a light shield layer is formed in other areas than the parts on the counter substrate corresponding to the pixel electrodes. The light shield layer is in principle effective to prevent the contrast ratio from decreasing but the actuality is that the numerical aperture of the display panel is nevertheless reduced because of the overlapping of the edges of the light shield layer and the peripheral edge of the pixel electrode.
It will be understood from the foregoing description that the known high-precision, small-size active matrix display device reduces the display performance because of the low numerical aperture. When a display device having a large area covered by the light shield layer is used for a projection type display device, another problem arises as black spots in the image picture resulting from the light shield layers.
SUMMARY OF THE INVENTION The active matrix display device of this invention, which overcomes the above-discussed and numerous other disadvantages and deficiencies of the prior art, comprises a first insulated substrate and a second insulated substrate, pixel electrodes arranged in matrix on an inner side of the first insulated substrate, signal lines for supplying an image signal, the signal line connecting one pixel electrode to another, wherein the signal line is covered with an insulating layer, and the pixel electrodes are formed on the insulating layers.
In a preferred embodiment, the parts of the pixel electrodes overlay parts of the signal lines through the insulating layers.
According to another aspect of the present invention, the active matrix display device comprises a pair of insulating substrates, pixel electrodes arranged in matrix on an inner side of one of the substrates, signal lines for supplying an image signal, the signal line connecting one pixel electrode to another, an additional capacitor for retaining the electric charge of the pixel electrode, an additional capacitor common line connected to one electrode of the additional capacitor, wherein the signal line is covered with an insulating layer, and the pixel electrodes are formed on the insulating layers, and wherein parts of the pixel electrodes overlay parts of the additional capacitor common lines.
In a preferred embodiment, the first insulated substrate comprises a stagger type thin film transistor including a semiconductor layer, a gate insulating layer, and a gate electrode formed thereon, the thin film transistor having a source electrode connected to the signal line, and a drain electrode connected to the pixel electrodes.
Thus, the present invention described herein makes possible of the objective of providing an active matrix display device capable of reproducing a high-precision image picture on the display by using pixel electrodes having a relatively large area and a large numerical aperture.
In the known display device, because of having no insulating layer between the signal line and the pixel electrodes or between the additional capacitor common line and the pixel electrodes, it is required that the signal line and the pixel electrodes, and the additional capacitor common line and the pixel electrodes must be arranged so as not to overlap each other. In contrast, in the present invention the signal line or the additional capacitor common line or both are wholly covered with an insulating layer on which the pixel electrodes are formed. Thus, it is not necessary to take into consideration any tolerance in forming the pixel electrodes by patterning, thereby securing a relatively large area of the pixel electrodes. The large area of pixel electrode has a large numerical aperture. In addition, the present invention ensures that no leakage of light occurs between the signal lines and the pixel electrodes or between the additional capacitor common lines and the pixel electrodes, thereby eliminating the necessity of providing light shield layers in these interface areas. This also increases the numerical aperture of the display panel.
FIG. 1 is a plan view showing a TFT array in an active matrix substrate employed in an active matrix display device according to the present invention;
FIG. 3 is a cross-sectional view taken along the line III--III in FIG. 1;
FIG. 4 is a diagrammatic view showing a known active matrix display device;
FIG. 5 is a partial plan view showing a TFT array used in the display device of FIG. 4; and
DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to FIGS. 1 to 3, an active matrix display device according to the present invention will be described in the order of the steps taken to fabricate it:
The whole surface of a transmissive insulating substrate 11 such as quartz and glass was covered with a polysilicon thin layer by a CVD method. The polysilicon thin layer is used to make a semiconductor layer 12 and a lower capacitor electrode 5 at a later stage. A stagger type TFT was used. Then, an insulating layer was formed by a CVD method, but it can be done by other methods such as by sputtering or by thermally oxidizing the surface of the polysilicon thin layer. The insulating layer is used to make a gate insulating layer 13 at a later stage. The gate insulating layer 13 was approximately 100 nm thick.
Next, the semiconductor layer 12 and the lower capacitor electrode 5 were patterned into the shape shown in FIG. 1. Alternatively, the gate insulating layer 13 can be formed after the semiconductor layer 12 and the lower capacitor electrode 5 are patterned into the desired shapes. It is possible to anneal it by laser or anneal it in a nitrogen atmosphere before the formation of the insulating layer, so as to enhance the crystallization of the polysilicon layer. Then, ion was implanted in the lower capacitor electrode 5 so as to make it a low resistance lower capacitor electrode.
Then, the gate bus 1, the gate electrode 3a and 3b, and the upper capacitor electrode 6 were formed. At first, a polysilicon thin layer was formed by a CVD method, and subjected to doping. The polysilicon thin layer was patterned into the shapes shown in FIG. 1. An additional capacitor 27 was formed between the upper capacitor electrode 6 and the lower capacitor electrode 5. The gate electrodes 3a and 3b, and a resist formed by photolithography were used as a mask, and under this mask ion was implanted in the parts of the semiconductor layer 12 lower than the gate electrodes 3a and 3b. In this way the source drain regions of the TFTs 25a and 25b were formed.
The whole surface of the substrate 11 was covered with an insulating layer 14 by a CVD method, in the form of a silicon oxidized film or a silicon nitride film either having a thickness of 700 nm. Then, as shown in FIG. 1 two contact holes 7a and 7c were formed. The addition of impurity to the silicone oxidized film facilitates the flattening of the top surface of the insulating layer 14 at about 1000� C. The flat surface of the insulating layer 14 prevents the wires formed thereon from being broken. As shown in FIG. 2, the contact hole 7a extended through the insulating layer 14 and the gate insulating layer 13, and is open on the semiconductor layer 12. The contact hole 7c extended through the insulating layer 14 and is open on an end portion of the upper capacitor electrode 6.
Then, the source bus 2 functioning as a signal line, and the additional capacitor common line 8 were simultaneously formed by using a low resistance metal such as aluminum. As shown in FIG. 1, the source bus 2 was passed through the contact hole 7a and expanded in the opening thereof. The additional capacitor common line 8 was passed through the contact hole 7c and expanded in the opening thereof. In this way the source bus 2 was connected to the semiconductor layer 12 through the contact hole 7a. The additional capacitor common line 8 was connected to the upper capacitor electrode 6 through the contact hole 7c. After the display device was finished, the additional capacitor common line 8 was connected to an electrode having the same potential as that of the counter electrode on the counter substrate.
Then, the silicon oxidizing film or silicon nitride film was formed on the whole surface of the substrate 11 by a CVD method, so as to form an intermediate insulating layer 17 in which a contact hole 7b was formed. As shown in FIG. 2, the contact hole 7b extended through the intermediate insulating layer 17, the insulating layer 14 and the gate insulating layer 13 and was open on the semiconductor layer 12 and the lower capacitor electrode 5.
A pixel electrode 4 was formed with ITO by patterning. As shown in FIG. 1, the pixel electrode 4 was formed so as to overlay the source bus 2 and the additional capacitor common line 8 and the contact hole 7b and 7c, and the additional capacitor 27. The pixel electrode 4 was connected to the semiconductor layer 12 through the contact hole 7b.
In the illustrated embodiment, the pixel electrodes 4 and the source bus 2, and the pixel electrode 4 and the additional capacitor common line 8 were layered through the intermediate insulating layer 17. This arrangement allows the pixel electrode 4 to be formed by patterning without regard to the distance from the source bus 2 and the additional capacitor common line 8, thereby securing a display device with a relatively large numerical aperture. No leakage of light occurs between the pixel electrode 4 and the source bus 2, or between the pixel electrode 4 and the additional capacitor common line 8. It is therefore unnecessary to overlap light shield layers on these interface areas, thereby avoiding reducing the numerical aperture of the display panel. In the illustrated embodiment, the light shield layers are provided at the areas between the source bus 2 and the additional capacitor common line 8. The width of the light shield layer can be equal to the sum of the spacing between the source bus 2 and the additional capacitor common line 8 and the overlapping portions of the counter substrate and the active matrix substrate.
The numerical aperture of the display panel illustrated in FIG. 1 was 48%, whereas that of the known display panel shown in FIG. 5 was 32%. This proves that the present invention achieves a larger numerical aperture of the display panel than that of the known display panel.
In the illustrated embodiment the spacing between the adjacent pixel electrodes 4 can be such a distance as to electrically isolate one from another. This distance is the minimum that allows the pixel electrodes to be formed by the process.
The illustrated embodiment allows the overlapping amounts of the pixel electrode 4 and the source bus 2, and the overlapping amounts of the pixel electrode 4 and the additional capacitor common line 8 to be equal to each other, but it is possible that the overlapping amounts of the pixel electrode 4 and the source bus 2 are larger than the overlapping amounts of the pixel electrode 4 and the additional capacitor common line 8. In the latter case, parasitic capacitance is minimized which otherwise would occur between the pixel electrode 4 and the source bus 2, thereby lessening variations in the potential of the pixel electrode 4. When the display device is operated with the maintenance of the constant potential of the counter electrode on the counter substrate, the same capacitance as that of the additional capacitor 27 is achievable as a parasitic capacitance between the pixel electrode 4 and the additional capacitor common line 8 because of the fact that the additional capacitor common line 8 is arranged so as to have the same potential as that of the counter electrode on the counter substrate. This parasite capacitance enhances the retention characteristic of an image signal applied to the pixel electrodes 4.
One pixel electrode 4 can be overlaid on the gate bus 1 connected to other pixel electrode located at one place before. This arrangement enlarges the area of the pixel electrode 4, thereby increasing the numerical aperture of the display panel. No leakage of light occurs between the pixel electrode 4 and the gate bus 1, thereby eliminating the necessity of overlaying a light shield layer over this area. Thus, the numerical aperture is protected from becoming reduced because of the overlapping edges of the light shield layers and the pixel electrodes 4. The gate bus 1 is kept "on" while image signals are applied to the pixel electrodes 4, and at other time it has the same potential as that of the counter electrode. As a result, a parasitic capacitance occurs which has the same function as the additional capacitor 27. This parasitic capacitance enhances the retention characteristic of image signals applied to the pixel electrode 4.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS4470060 *Jan 11, 1982Sep 4, 1984Semiconductor Energy Laboratory Co., Ltd.Liquid crystal display with vertical non-single crystal semiconductor field effect transistorsUS4839707 *Oct 13, 1988Jun 13, 1989Hughes Aircraft CompanyLCMOS displays fabricated with implant treated silicon wafersUS5032883 *Sep 7, 1988Jul 16, 1991Casio Computer Co., Ltd.Thin film transistor and method of manufacturing the sameUS5042918 *Oct 18, 1989Aug 27, 1991Kabushiki Kaisha ToshibaLiquid crystal display deviceJPS58172685A * Title not available* Cited by examinerNon-Patent CitationsReference1 *N. J. Koda et al, Japanese Patent Publication No. 56 39477, published Sep. 12, 1981.2N. J. Koda et al, Japanese Patent Publication No. 56-39477, published Sep. 12, 1981.3 *T. Shimada et al., Japanese Laid open Patent Publication No. 1 304402 1990.4T. Shimada et al., Japanese Laid-open Patent Publication No. 1-304402 1990.* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS5491347 *Apr 28, 1994Feb 13, 1996Xerox CorporationThin-film structure with dense array of binary control units for presenting imagesUS5568288 *Nov 16, 1993Oct 22, 1996Semiconductor Energy Laboratory Co., Ltd.Method for forming thin film transistors with anodic oxide on sides of gate lineUS5641974 *Apr 12, 1996Jun 24, 1997Ois Optical Imaging Systems, Inc.LCD with bus lines overlapped by pixel electrodes and photo-imageable insulating layer therebetweenUS5648674 *Jun 7, 1995Jul 15, 1997Xerox CorporationArray circuitry with conductive lines, contact leads, and storage capacitor electrode all formed in layer that includes highly conductive metalUS5657101 *Dec 15, 1995Aug 12, 1997Industrial Technology Research InstituteLCD having a thin film capacitor with two lower capacitor electrodes and a pixel electrode serving as an upper electrodeUS5659375 *Jun 2, 1995Aug 19, 1997Sharp Kabushiki KaishaActive matrix LCD device having two equal coupling capacitancesUS5693567 *Jun 7, 1995Dec 2, 1997Xerox CorporationPerforming two etching operations on an insulating layer to expose different parts of a conductive layerUS5739549 *Nov 18, 1996Apr 14, 1998Semiconductor Energy Laboratory Co., Ltd.Thin film transistor having offset regionUS5777701 *May 7, 1996Jul 7, 1998Semiconductor Energy Laboratory Co., Ltd.Display deviceUS5780871 *Apr 2, 1997Jul 14, 1998Ois Optical Imaging Systems, Inc.TFT structure including a photo-imageable insulating layer for use with LCDs and image sensorsUS5814529 *Jan 16, 1996Sep 29, 1998Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS5852488 *Dec 22, 1995Dec 22, 1998Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the sameUS5867242 *Apr 1, 1997Feb 2, 1999Xerox CorporationElectrically isolated pixel element in a low voltage activated active matrix liquid crystal display and methodUS5899548 *Oct 13, 1995May 4, 1999Sharp Kabushiki KaishaLiquid crystal display device and method for manufacturing sameUS5920084 *Nov 14, 1997Jul 6, 1999Ois Optical Imaging Systems, Inc.LCD with increased pixel opening sizesUS5929464 *Jan 19, 1996Jul 27, 1999Semiconductor Energy Laboratory Co., Ltd.Active matrix electro-optical deviceUS5933205 *Jun 26, 1998Aug 3, 1999Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for driving the sameUS5955744 *Dec 14, 1998Sep 21, 1999Ois Optical Imaging Systems, Inc.LCD with increased pixel opening sizesUS5956105 *Dec 4, 1995Sep 21, 1999Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the sameUS5963278 *Jul 31, 1997Oct 5, 1999Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for driving the sameUS5982460 *Jun 24, 1997Nov 9, 1999Semiconductor Energy Laboratory Co., Ltd.Electro-optical displayUS5994721 *Aug 8, 1997Nov 30, 1999Ois Optical Imaging Systems, Inc.High aperture LCD with insulating color filters overlapping bus lines on active substrateUS5998841 *Oct 5, 1998Dec 7, 1999Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including active matrix circuitUS6011274 *Oct 20, 1997Jan 4, 2000Ois Optical Imaging Systems, Inc.X-ray imager or LCD with bus lines overlapped by pixel electrodes and dual insulating layers therebetweenUS6023074 *Jun 17, 1997Feb 8, 2000Semicondutor Energy Laboratory Co., Ltd.Active matrix display having storage capacitor associated with each pixel transistorUS6088071 *Feb 19, 1998Jul 11, 2000Kabushiki Kaisha ToshibaAuxiliary capacitor for a liquid crystal display deviceUS6100947 *Jun 4, 1998Aug 8, 2000Seiko Epson CorporationLiquid crystal panel substrate, liquid crystal panel and electronic apparatus using the sameUS6115088 *Sep 3, 1997Sep 5, 2000Semiconductor Energy Laboratory Co., Ltd.Display deviceUS6121652 *Feb 16, 1999Sep 19, 2000Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including active matrix circuitUS6133967 *Mar 31, 1999Oct 17, 2000Lg Electronics, Inc.Method of fabricating liquid crystal display with increased aperture ratioUS6153893 *Dec 12, 1996Nov 28, 2000Sony CorporationThin film semiconductor device for displayUS6160269 *Dec 9, 1997Dec 12, 2000Semiconductor Energy Laboratory Co., Ltd.Thin film semiconductor integrated circuitUS6184960 *Dec 30, 1998Feb 6, 2001Sharp Kabushiki KaishaMethod of making a reflective type LCD including providing a protective metal film over a connecting electrode during at least one portion of the manufacturing processUS6219118Apr 20, 1998Apr 17, 2001Semiconductor Energy Laboratory Co., Ltd.LCD with shield film formed at overlapping portion of bus lines and pixel electrodeUS6246453 *Jul 22, 1999Jun 12, 2001Semiconductor Energy Laboratory Co., Ltd.Electro-optical deviceUS6259117 *Dec 30, 1999Jul 10, 2001Semiconductor Energy Laboratory Co., Ltd.Active matrix display having storage capacitor associated with each pixel transistorUS6297518Jun 26, 1998Oct 2, 2001Semiconductor Energy Laboratory Co., Ltd.Active matrix display and electrooptical deviceUS6307215Jul 21, 1999Oct 23, 2001Ois Optical Imaging Systems, Inc.TFT array with photo-imageable insulating layer over address linesUS6313481Jul 19, 1999Nov 6, 2001Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method of manufacturing the sameUS6320224Jul 7, 1998Nov 20, 2001Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS6320226Sep 17, 1999Nov 20, 2001Lg. Philips Lcd Co., Ltd.LCD with increased pixel opening sizesUS6337731Oct 15, 1999Jan 8, 2002Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the sameUS6341004 *Apr 5, 2000Jan 22, 2002Hitachi, Ltd.Liquid crystal display device with common electrode arrangementUS6359672Oct 20, 1997Mar 19, 2002Guardian Industries Corp.Method of making an LCD or X-ray imaging device with first and second insulating layersUS6365916Jul 16, 1999Apr 2, 2002Lg. Philips Lcd Co., Ltd.High aperture LCD with insulating color filters overlapping bus lines on active substrateUS6372534Apr 12, 1996Apr 16, 2002Lg. Philips Lcd Co., LtdMethod of making a TFT array with photo-imageable insulating layer over address linesUS6376270Jun 27, 1996Apr 23, 2002Lg. Philips Lcd Co., Ltd.Method of making an array of TFTs having an insulation layer with a low dielectric constantUS6388291Jan 18, 2000May 14, 2002Semiconductor Energy Laboratory Co., Ltd.Semiconductor integrated circuit and method for forming the sameUS6414345 *Oct 2, 1998Jul 2, 2002Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including active matrix circuitUS6417057Aug 3, 2000Jul 9, 2002Semiconductor Energy Laboratory Co., Ltd.Method of forming a semiconductor device having a TFT utilizing optical annealing before a gate electrode is formedUS6421101Apr 7, 2000Jul 16, 2002Semiconductor Energy Laboratory Co., Ltd.Display device including a transparent electrode pattern covering and extending along gate & source linesUS6433361Feb 5, 1997Aug 13, 2002Semiconductor Energy Laboratory Co., Ltd.Semiconductor integrated circuit and method for forming the sameUS6436815Mar 29, 2000Aug 20, 2002Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for driving the sameUS6437367May 21, 1999Aug 20, 2002Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for driving the sameUS6437839 *Apr 23, 1999Aug 20, 2002National Semiconductor CompanyLiquid crystal on silicon (LCOS) display pixel with multiple storage capacitorsUS6462403 *Aug 21, 2000Oct 8, 2002Semiconductor Energy Laboratory Co., Ltd.Semiconductor device comprising thin film transistors having a passivation film formed thereonUS6468839Nov 3, 1999Oct 22, 2002Sony CorporationThin film semiconductor device for display and method of producing sameUS6476447 *Sep 12, 2000Nov 5, 2002Semiconductor Energy Laboratory Co., Ltd.Active matrix display device including a transistorUS6480577Apr 3, 2000Nov 12, 2002Sharp Kabushiki KaishaActive matrix substrate, method of manufacturing same, and flat-panel image sensorUS6495858Feb 7, 2000Dec 17, 2002Semiconductor Energy Laboratory Co., Ltd.Active matrix display device having thin film transistorsUS6524896Jul 14, 2000Feb 25, 2003Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of fabricating the sameUS6534832Oct 26, 2001Mar 18, 2003Semiconductor Energy Laboratory Co., Ltd.Display device and glass member and substrate member having film comprising aluminum, nitrogen and oxygenUS6542205 *Aug 2, 2001Apr 1, 2003Semiconductor Energy Laboratory Co., Ltd.Display deviceUS6566684Mar 21, 2000May 20, 2003Semiconductor Energy Laboratory Co., Ltd.Active matrix circuit having a TFT with pixel electrode as auxiliary capacitorUS6566711Jun 25, 1999May 20, 2003Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having interlayer insulating filmUS6576504Sep 21, 2001Jun 10, 2003Semiconductor Energy Laboratory Co., Ltd.Method of fabricating a liquid crystal display device having an improved storage capacitanceUS6593592 *Jan 28, 2000Jul 15, 2003Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having thin film transistorsUS6665024 *Mar 27, 2003Dec 16, 2003Seiko Epson CorporationElectro-optical device having storage capacitor laminated between TFT and data lineUS6665374 *Aug 27, 2002Dec 16, 2003Sharp Kabushiki KaishaActive matrix substrate, method of manufacturing same, and flat-panel image sensorUS6690031 *Apr 20, 1999Feb 10, 2004Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the sameUS6690063Dec 7, 2001Feb 10, 2004Semiconductor Energy Laboratory Co., Ltd.Thin film semiconductor integrated circuit and method for forming the sameUS6693681May 29, 1998Feb 17, 2004Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the sameUS6697136 *Sep 26, 2000Feb 24, 2004Seiko Epson CorporationLiquid crystal device, projector, and method of manufacturing the liquid crystal deviceUS6707067Feb 11, 2002Mar 16, 2004Lg.Philips Lcd Co., Ltd.High aperture LCD with insulating color filters overlapping bus lines on active substrateUS6724453 *May 9, 2001Apr 20, 2004Lg.Philips Lcd Co., Ltd.Method of fabricating array substrate for use in an in-plane switching mode liquid crystal display deviceUS6778231Jan 19, 1999Aug 17, 2004Semiconductor Energy Laboratory Co., Ltd.Electro-optical display deviceUS6784949 *Mar 7, 2000Aug 31, 2004Sharp Kabushiki KaishaActive matrix substrate, method of manufacturing the same, and image sensor incorporating the sameUS6800873Dec 3, 2002Oct 5, 2004Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and electronic deviceUS6825496Jan 15, 2002Nov 30, 2004Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS6825891Oct 8, 2003Nov 30, 2004Seiko Epson CorporationElectro-optical device having storage capacitor laminated between data line and pixel electrodeUS6847097Jul 16, 2001Jan 25, 2005Semiconductor Energy Laboratory Co., Ltd.Glass substrate assembly, semiconductor device and method of heat-treating glass substrateUS6864127Feb 4, 2003Mar 8, 2005Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of fabricating the sameUS6885027Oct 10, 2002Apr 26, 2005Semiconductor Energy Laboratory Co., Ltd.Active matrix display and electrooptical deviceUS6914260 *Oct 8, 2002Jul 5, 2005Semiconductor Energy Laboratory Co., Ltd.Electro-optical deviceUS6914642Jun 12, 2002Jul 5, 2005Semiconductor Energy Laboratory Co., Ltd.Active matrix display deviceUS6916675Feb 24, 2004Jul 12, 2005Lg.Philips Lcd Co., Ltd.Method of fabricating array substrate for use in an in-plane switching mode liquid crystal display deviceUS6949812 *Sep 24, 2002Sep 27, 2005Infineon Technologies AgMethod for manufacturing a high frequency semiconductor structure and high frequency semiconductor structureUS6955953Jun 24, 2003Oct 18, 2005Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing a semiconductor device having thin film transistor and capacitorUS6964890Feb 23, 1999Nov 15, 2005Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method for forming the sameUS6975296Mar 31, 2000Dec 13, 2005Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the sameUS6977392Mar 18, 2003Dec 20, 2005Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS7023502Mar 3, 2005Apr 4, 2006Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having light-shielded thin film transistorUS7038302Oct 26, 2004May 2, 2006Semiconductor Energy Laboratory Co., Ltd.Glass substrate assembly, semiconductor device and method of heat-treating glass substrateUS7046313Jul 15, 2002May 16, 2006Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including a source line formed on interlayer insulating film having flattened surfaceUS7102164Aug 31, 2004Sep 5, 2006Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having a conductive layer with a light shielding partUS7102169 *Mar 19, 2004Sep 5, 2006Semiconductor Energy Laboratory Co., Ltd.Semiconductor deviceUS7110059Dec 3, 2004Sep 19, 2006Semiconductor Energy Laboratory Co., Ltd.Display deviceUS7122835Apr 4, 2000Oct 17, 2006Semiconductor Energy Laboratory Co., Ltd.Electrooptical device and a method of manufacturing the sameUS7135705Mar 15, 2004Nov 14, 2006Lg.Philips Lcd Co., Ltd.High aperture LCD with insulating color filters overlapping bus lines on active substrateUS7148506Apr 25, 2005Dec 12, 2006Semiconductor Energy Laboratory Co., Ltd.Active matrix display and electrooptical deviceUS7161178Mar 26, 2003Jan 9, 2007Semiconductor Energy Laboratory Co., Ltd.Display device having a pixel electrode through a second interlayer contact hole in a wider first contact hole formed over an active region of display switchUS7164155 *May 1, 2003Jan 16, 2007Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS7190418 *Dec 2, 2005Mar 13, 2007Sharp Kabushiki KaishaSemiconductor deviceUS7190420Mar 23, 2001Mar 13, 2007Semiconductor Energy Laboratory Co., Ltd.Display deviceUS7206053Mar 8, 2005Apr 17, 2007Semiconductor Energy Laboratory Co., Ltd.Electro-optical deviceUS7215402Jan 8, 2004May 8, 2007Semiconductor Energy Laboratory Co., Ltd.Electronic device having liquid crystal display deviceUS7218361Mar 16, 2001May 15, 2007Semiconductor Energy Laboratory Co., Ltd.Semiconductor display device and manufacturing method thereofUS7242024Nov 15, 2004Jul 10, 2007Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS7250720Apr 20, 2004Jul 31, 2007Semiconductor Energy Laboratory Co., Ltd.Display deviceUS7250991Mar 10, 2004Jul 31, 2007Sharp Kabushiki KaishaActive matrix substrate, method of manufacturing the same, and image sensor incorporating the sameUS7271857 *Feb 19, 2003Sep 18, 2007Samsung Electronics Co., Ltd.Method for manufacturing a liquid crystal displayUS7323717 *May 21, 2004Jan 29, 2008Semiconductor Energy Laboratory Co., Ltd.Semiconductor deviceUS7333160 *Jun 9, 2003Feb 19, 2008Semiconductor Energy Laboratory Co., Ltd.Display device including resin filmUS7420628Oct 3, 1997Sep 2, 2008Semiconductor Energy Laboratory Co., Ltd.Method of making an active-type LCD with digitally graded displayUS7422630Jun 5, 2006Sep 9, 2008Semiconductor Energy Laboratory Co., Ltd.Fabrication method of semiconductor deviceUS7423291 *Aug 22, 2006Sep 9, 2008Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and electronic deviceUS7427780Nov 14, 2003Sep 23, 2008Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of fabricating sameUS7445948Jan 23, 2002Nov 4, 2008Lg. Display Co., Ltd.Method of making a TFT array with photo-imageable insulating layer over address linesUS7456911Aug 10, 2001Nov 25, 2008Semiconductor Energy Laboratory Co., Ltd.Semiconductor deviceUS7459724Dec 11, 2006Dec 2, 2008Semiconductor Energy Laboratory Co., Ltd.Active matrix display and electrooptical deviceUS7474376Oct 5, 2006Jan 6, 2009Semiconductor Energy Laboratory Co., Ltd.Display deviceUS7479657Dec 27, 2006Jan 20, 2009Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including active matrix circuitUS7479939Jan 17, 1995Jan 20, 2009Semiconductor Energy Laboratory Co., Ltd.Electro-optical deviceUS7486344Feb 28, 2007Feb 3, 2009Semiconductor Energy Laboratory Co., Ltd.Semiconductor display device and manufacturing method thereofUS7489367Apr 8, 1999Feb 10, 2009Semiconductor Energy Laboratory, Co., Ltd.Electro-optical device and method for driving the sameUS7517738Nov 15, 2001Apr 14, 2009Semiconductor Energy Laboratory Co., Ltd.Method for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS7542103Apr 16, 2007Jun 2, 2009Semiconductor Energy LaboratoryElectro-optical deviceUS7550325Jul 17, 2003Jun 23, 2009Semiconductor Energy Laboratory Co., Ltd.Method of manufacturing an active matrix display deviceUS7554616Apr 23, 1993Jun 30, 2009Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the sameUS7564057 *Apr 22, 1999Jul 21, 2009Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having an aluminum nitride filmUS7566903Nov 28, 2005Jul 28, 2009Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the sameUS7575961Sep 29, 2006Aug 18, 2009Semiconductor Energy Laboratory Co., Ltd.Electrooptical device and a method of manufacturing the sameUS7612836 *Jun 29, 2005Nov 3, 2009Lg Display Co., Ltd.Liquid crystal display device and fabrication method thereofUS7615786Oct 31, 2007Nov 10, 2009Semiconductor Energy Laboratory Co., Ltd.Thin film transistor incorporating an integrated capacitor and pixel regionUS7646022May 9, 2006Jan 12, 2010Semiconductor Energy Laboratory Co., Ltd.Display deviceUS7646441Sep 24, 2001Jan 12, 2010Semiconductor Energy Laboratory Co., Ltd.Electro-optical display device having thin film transistors including a gate insulating film containing fluorineUS7671369Mar 28, 2003Mar 2, 2010Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS7671827 *May 13, 2004Mar 2, 2010Semiconductor Energy Laboratory Co., Ltd.Electro-optical deviceUS7675074Jan 12, 2007Mar 9, 2010Semiconductor Energy Laboratory Co., Ltd.Light emitting device including a lamination layerUS7679087 *Aug 9, 2002Mar 16, 2010Semiconductor Energy Laboratory Co., Ltd.Semiconductor active region of TFTs having radial crystal grains through the whole area of the regionUS7683978Mar 12, 2007Mar 23, 2010Semiconductor Energy Laboratory Co., Ltd.Display deviceUS7687809May 2, 2008Mar 30, 2010Semiconductor Energy Laboratory Co., LtdMethod for producing a semiconductor integrated circuit including a thin film transistor and a capacitorUS7709837Jul 10, 2006May 4, 2010Semiconductor Energy Laboratory Co., LtdSemiconductor device and its manufacturing methodUS7808002Jul 3, 2007Oct 5, 2010Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS7859603 *Jan 30, 2009Dec 28, 2010Seiko Epson CorporationElectro-optical device and electronic apparatusUS7863618Nov 2, 2009Jan 4, 2011Semiconductor Energy Laboratory Co., Ltd.Display deviceUS7863619Apr 21, 2009Jan 4, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS7915615Jul 7, 2009Mar 29, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the sameUS7916232Mar 31, 2009Mar 29, 2011Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method for driving the sameUS7928946Sep 15, 2004Apr 19, 2011Semiconductor Energy Laboratory Co., Ltd.Electro-optical device and method of driving the sameUS7944513 *Aug 1, 2008May 17, 2011Casio Computer Co., Ltd.Display deviceUS7955975Jul 21, 2010Jun 7, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS7964874May 19, 2008Jun 21, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device having a protective circuitUS7994504Jul 31, 2009Aug 9, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS7999263Aug 4, 2005Aug 16, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS8008666Feb 24, 2010Aug 30, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS8018403Jul 6, 2007Sep 13, 2011Semiconductor Energy Laboratory Co., Ltd.Display deviceUS8039853Sep 10, 2010Oct 18, 2011Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS8049830Sep 21, 2009Nov 1, 2011Lg Display Co., Ltd.Liquid crystal display device and fabrication method thereofUS8053778Dec 30, 2010Nov 8, 2011Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS8115210Jun 17, 2011Feb 14, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS8120031Jul 31, 2007Feb 21, 2012Semiconductor Energy Laboratory Co., Ltd.Display device including an opening formed in a gate insulating film, a passivation film, and a barrier filmUS8120033Jul 21, 2010Feb 21, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS8129715Mar 2, 2010Mar 6, 2012Semiconductor Energy Labratory Co., Ltd.Light emitting deviceUS8139001Aug 17, 2011Mar 20, 2012Semiconductor Energy Laboratory Co., Ltd.Display deviceUS8168975May 28, 2009May 1, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereofUS8198110 *Oct 14, 2008Jun 12, 2012Lg Display Co., Ltd.Method of making a TFT array with photo-imageable insulating layer over address linesUS8237179Sep 23, 2011Aug 7, 2012Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS8253890Oct 4, 2006Aug 28, 2012Lg Display Co., Ltd.High aperture LCD with insulating color filters overlapping bus lines on active substrateUS8294840 *Mar 19, 2008Oct 23, 2012Chimei Innolux CorporationLiquid crystal display device with fringe field switching modeUS8319715Sep 5, 2008Nov 27, 2012Semiconductor Energy Laboratory Co., Ltd.Active matrix type liquid crystal display deviceUS8324693Nov 7, 2011Dec 4, 2012Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and a method for manufacturing the sameUS8368072Jul 31, 2008Feb 5, 2013Semiconductor Energy Labratory Co., Ltd.Display device and method of fabricating the sameUS8399884Mar 25, 2011Mar 19, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the sameUS8405787 *Mar 17, 2009Mar 26, 2013Au Optronics Corp.Pixel structure of a display panelUS8415669Aug 25, 2011Apr 9, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS8421944 *Dec 19, 2007Apr 16, 2013Sharp Kabushiki KaishaDisplay device substrate, display device, and wiring substrateUS8476623Feb 28, 2012Jul 2, 2013Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS8487315Oct 19, 2011Jul 16, 2013Semiconductor Energy Laboratory Co., Ltd.Illumination apparatusUS8497508Apr 18, 2012Jul 30, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and manufacturing method thereofUS8502215Feb 15, 2012Aug 6, 2013Semiconductor Energy Laboratory Co., Ltd.Semiconductor element and display device using the sameUS8536577Aug 17, 2012Sep 17, 2013Semiconductor Energy Laboratory Co., Ltd.Display deviceUS8546825Jul 23, 2012Oct 1, 2013Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS8586985Dec 30, 2010Nov 19, 2013Semiconductor Energy Laboratory Co., Ltd.Display deviceUS8643021Feb 13, 2012Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device including multiple insulating filmsUS8643820Jan 4, 2012Feb 4, 2014Semiconductor Energy Laboratory Co., Ltd.Electronic device having liquid crystal display deviceUS8659012Jul 1, 2013Feb 25, 2014Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS8665409Sep 30, 2008Mar 4, 2014Semiconductor Energy Laboratory Co., Ltd.Display device with sealing materialUS8674908Mar 7, 2012Mar 18, 2014Semiconductor Energy Laboratory Co., Ltd.Display deviceUS8704233Mar 14, 2013Apr 22, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor device and method of manufacturing the sameUS8709847Jan 31, 2013Apr 29, 2014Semiconductor Energy Laboratory Co., Ltd.Method of fabricating display deviceUS8779431Sep 26, 2013Jul 15, 2014Semiconductor Energy Laboratory Co., Ltd.Light emitting deviceUS8829529Jul 12, 2013Sep 9, 2014Semiconductor Energy Laboratory Co., Ltd.Illumination apparatusUS8835271Apr 5, 2013Sep 16, 2014Semiconductor Energy Laboratory Co., Ltd.Semiconductor display deviceUS20060043527 *Aug 17, 2005Mar 2, 2006Won-Kyu KwakCapacitorUS20100059758 *Mar 17, 2009Mar 11, 2010Sheng-Chao LiuPixel structure of a display panelUS20100110320 *Dec 19, 2007May 6, 2010Hidehito KitakadoDisplay device substrate, display device, and wiring substrateUSRE43782Oct 8, 2004Nov 6, 2012Semiconductor Energy Laboratory Co., Ltd.Active matrix display device having wiring layers which are connected over multiple contact partsCN101364604BAug 7, 2008Oct 24, 2012卡西欧计算机株式会社Display deviceCN101539691BMar 19, 2009Aug 7, 2013统宝光电股份有限公司System for displaying images and manufacturing method thereofEP1037095A2 *Mar 10, 2000Sep 20, 2000Sharp Kabushiki KaishaActive matrix substrate, method of manufacturing the same, and image sensor incorporating the sameEP2192441A2Mar 10, 2000Jun 2, 2010Sharp CorporationActive matrix substrate, method of manufacturing the same, and image sensor incorporation the same* Cited by examinerClassifications U.S. Classification257/72, 349/47, 349/111, 349/39, 349/140, 257/E27.111International ClassificationH01L27/12, G02F1/1368, G02F1/1362, G02F1/1333, H01L29/786, G02F1/136, H01L21/336, G02F1/1343Cooperative ClassificationG02F1/136213, G02F2001/13685, G02F2001/13606, G02F1/136227, H01L27/12European ClassificationG02F1/1362C, H01L27/12, G02F1/1362HLegal EventsDateCodeEventDescriptionJun 23, 2004FPAYFee paymentYear of fee payment: 12Jul 17, 2000FPAYFee paymentYear of fee payment: 8Jul 15, 1996FPAYFee paymentYear of fee payment: 4May 17, 1991ASAssignmentOwner name: SHARP KABUSHIKI KAISHA, JAPANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:SHIMADA, TAKAYUKI;MATSUSHIMA, YASUHIRO;TAKAFUJI, YUTAKA;REEL/FRAME:005720/0119Effective date: 19910426RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google

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01/25/2016 07:25 EST | Updated 01/25/2017 05:12 EST
CALGARY — Fewer WestJet planes will be flying in and out Alberta's two biggest cities as weakness in the energy sector puts a damper on demand.
WestJet announced that it will be reducing the number of flights from two major Alberta cities. (Ben Nelms/Bloomberg via Getty Images)
As of March, the airline said it will be reducing service between Calgary and Edmonton. Several more routes to and from those two cities are either being cancelled or scaled back.
"We look at our service based on supply and demand," WestJet vice-president Richard Bartrem said Monday.
"With the downturn in the economy, we're seeing less demand for travel to and from the energy markets and into areas across Canada. We've decided that we would move some of that capacity into markets where we're seeing less of that impact so that we're actually using the fleet as effectively as possible while minimizing the effect on the guest."
Bartrem said the decline in traffic has been "noticeable enough" to warrant changes, but did not specify how big of a drop the airline saw in the affected markets.
"We look at our service based on supply and demand."
WestJet will be removing flights between Calgary and two B.C. destinations — Terrace and Prince George. Direct flights between Edmonton and Nanaimo and Kamloops, B.C. are also being cancelled. Bartrem said customers can still get between those destinations by changing planes elsewhere.
As well, WestJet is reducing the number of flights between Calgary and Brandon, Man. and Fort McMurray, Alta. And there be fewer flights between the provincial capital and Abbotsford, B.C. and Grande Prairie, Alta.
MORE:Albertacpvideowestjetwestjet airlinewestjet albertawestjet alberta flightswestjet calgarywestjet edmontonwestjet flight reductionswestjet flights

type: global

value: HuffPost, formerly The Huffington Post until 2017 and sometimes abbreviated HuffPo, is an American news aggregator and blog, with localized and international editions. The site offers news, satire, blogs and original content, and covers politics, business, entertainment, environment, technology, popular media, lifestyle, culture, comedy, healthy living, women's interests and local news featuring columnists.


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CROMPTON.BO: Summary for CROMPTON GREAVES LTD.- Yahoo! Finance
Streaming Ticker Tape: OnOffMore On CROMPTON.BOQuotesSummaryOrder BookOptionsHistorical PricesChartsInteractiveBasic ChartBasic Tech. AnalysisNews & InfoHeadlinesPress ReleasesCompany EventsMessage BoardsCompanyProfileKey StatisticsSEC FilingsCompetitorsIndustryComponentsAnalyst CoverageAnalyst OpinionAnalyst EstimatesResearch ReportsOwnershipMajor HoldersInsider TransactionsInsider RosterFinancialsIncome StatementBalance SheetCash Flow
Crompton Greaves Limited (CROMPTON.BO) -BSE 96.35 0.95(0.98%) May 24, 6:22AM EDTAdd to PortfolioPrev Close:97.30Open:96.75Bid:96.90Ask:97.101y Target Est:N/ABeta:N/ANext Earnings Date:N/ADay's Range:94.75 - 100.2552wk Range:N/AVolume:954,945Avg Vol (3m):N/AMarket Cap:61.85BP/E (ttm):158.47EPS (ttm):0.61Div & Yield:N/A (N/A) Compare BrokersQuotes delayed, except where indicated otherwise. Currency in INR.HeadlinesNo Headlines available for CROMPTON.BO at this time.ReportsNo Reports available for CROMPTON.BO at this time.1d5dcustomize chart
ComparisonSymbol% ChgMkt CapCROMPTON.BO 0.98%61.85BGEC.L 0.00%124.08BSIE.L 1.95%69.77BHON.L 0.00%47.28BGE.MX 0.24%3.05T» More CompetitorsSectorIndustrial GoodsIndustryDiversified MachineryKey StatisticsForward P/E (1 yr):N/AP/S (ttm):0.53Ex-Dividend Date:N/A» More Key StatisticsAnalystsAnnual EPS Est
:N/AMean Recommendation*:N/APEG Ratio (5 yr expected):N/A* (Strong Buy) 1.0 - 5.0 (Sell)Analyst Opinion | EstimatesBusiness SummaryCrompton Greaves Limited engages in the provision of power systems, industrial systems, and consumer products in India and internationally. It offers power systems, including transformers and reactors; switchgear products; power quality solutions;... View MoreCompany Profile | Industry
ToolboxSet Alert for CROMPTON.BODownload Data (delayed)Updates on your phoneAdd Quotes to Your Web SiteAdd CROMPTON.BO Headlines to My Yahoo!+ My Yahoo! RSS
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Proof of Kennedy Clan Inbreeding | The Unknown Conservative Blogger
Proof of Kennedy Clan Inbreeding
I honestly think I know why so many of the Kennedy clan are utterly useless, vapid, and stupid. Most likely it has something to do with inbreeding.
So, Robert Kennedy Jr. – you might remember him as the total nutcase who wants wind power everywhere, except where it is visible from his property – decides he’s going to educate us on the “rabid intolerance” of the right-wing. I invite you to review his “lecture” on the HuffingtonPost.com:
The Dallas, Texas, airwaves were particularly radioactive; preachers and political leaders and local businessmen spewed extremist vitriol on the city’s radio and TV stations, inflaming the passions of the city’s legions of unhinged fanatics. There was something about the city — a rage or craziness, that, whether sensible or not, seemed to have set the stage for Jack’s murder. The Voice of America, half an hour after the assassination, described Dallas as “the center of extreme right wing.” The Texas town was such a seething cauldron of right-wing depravity that historian William Manchester portrayed it as recalling the final days of the Weimar Republic. “Mad things happened,” reported Manchester. “Huge billboards screamed ‘Impeach Earl Warren.'” Jewish stores were smeared with crude swastikas. Fanatical young matrons swayed in public to the chant “Stevenson’s going to die — his heart will stop stop stop and he will burn burn burn!” The mercantile elite that ruled the city carefully cultivated the seeds of hate. Radical-right broadsides were distributed in public schools; the Kennedy name was booed in classrooms; junior executives who refused to attend radical seminars were blackballed and fired. Manchester continued:
Dallas had become the mecca for medicine show evangelists of the National Independence Convention, the Christian Crusades, the Minutemen, the John Birch Society and Patrick Henry Societies and the headquarters of right wing oil man H.L. Hunt and his dubious activities… The city’s mayor, Earl Carroll, a right wing co-founder of the John Birch Society, was known as ‘the socialist mayor of Dallas’ because he maintained his affiliation with the Democratic Party.
Dallas’s oil and gas barons who routinely denounced JFK as a “comsymp” had unbottled the genie of populist rage and harnessed it to the cause of radical ideology, anti-government fervor and corporate dominion.
There’s only one problem with this flurry of emotive writing: the guy who killed “Uncle Jack” was a left-winger.
Yes, anyone with a history book, and a couple of functioning brain cells, knew that Lee Harvey Oswald:
1) Had been seen soliciting fliers for Castro’s Cuba,
2) Been interviewed on TV discussing the glories of the Cuban Revolution,
3) Publically admitted being a Marxist,
4) Renounced his citizenship to go live in the Soviet Union…you know, where radical left-wingers established a “people’s atheist socialist paradise” not long after they assassinated the Czar, his family, and about half the population of the country.
Maybe he missed a few of those facts since…oh…1963. Not exactly the personal beliefs and habits that scream “right-winger.”
In fact, you can find all of these “previously unknown” facts if you watch any of the rotating History Channel / Biography Channel Discovery Channel / PBS broadcasts that run almost like clockwork, any book on the Kennedy assassination, or high school history book.
Which, I think, gives you a pretty good idea as to how “well read” Robert Kennedy Jr. really is.
What might be a little more disturbing is Robbie Junior is a professor at Pace University. So, we have a complete and total moron, who has publically humiliated himself by posting utterly delusional nonsense, teaching kids…undoubtedly on your dime.
My thought is that the dissolution of the Kennedy legacy has something to do with inbreeding. Because I find it hard to believe that people like this, supposedly educated, would write this kind of stupid crap and think that the rest of us won’t notice. It might explain why so many Kennedys – including the “liberal lion” who is probably looking for an air conditioning unit in the lowest pits of Hell at this moment – are so utterly stupid and corrupt. If they aren’t leaving staffers to drown (Teddy Kennedy), killing their girlfriends (Michael Skakel), or banging the babysitter (Michael Kennedy) they’re blathering about a bunch of stuff that is about as fantastical as it is moronic.
Because, I honestly think that you can’t write the stuff that Robert Kennedy Jr. just did, and not have a skull full of really, really bad wiring.
Of course, it probably doesn’t help that the patriarch of the family was a bootlegger, and nailing as much swinging tail as he could find. Who knows, maybe a few of old Joe’s conquests were his first cousins? I guess we’ll never know…
This entry was posted on Monday, January 17th, 2011 at 7:34 pm and is filed under Blatant Sarcasm, Religious Zealotry, The Body Politic.	You can follow any responses to this entry through the RSS 2.0 feed. You can leave a response, or trackback from your own site.

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Experimental Theology: Love Wins
Lots of buzz about Rob Bell and the "universalism" tag regarding his upcoming book due out toward the end of March:LOVE WINS. from Rob Bell on Vimeo.I think I'm in the minority among my academic friends with this, but I've always liked Bell's work.
This entry was posted by Richard Beck. Bookmark the permalink. 5 thoughts on “Love Wins”
I've read Velvet Elvis and Jesus Wants to Save Christians, and I too like Bell's stuff. After spending a good bit of last evening reading through the buzz on Love Wins, I have noticed a good deal of--I'm not sure what to call it... snobbery I guess--looking-down-the-nose at Bell's scholarship and style, almost regardless of any controversial stands on issues. It's almost like some are looking for any reason to discredit him rather than discuss the issue at hand. I don't get why... then again, maybe I do.
People seem to have something against any Christian leader who has too much of a following (especially in the Church of Christ tradition). Many think that to be truly right we must also be truly hated and in the minority. But it seems like there was a a guy who drew crowds of thousands from all around to here his preaching...I think he fed them too...
I'm a Bell fan to be sure, so much so that I even download his sermons from his church. They're not quite what they used to be, as he was a wizard of preaching back in 2007ish, but I hold him as one of the guys who really "gets" the grace of God. I'm really excited for this book, he's been hinting towards this stance for years now, and I'm actually a little surprised he's coming out with it. I thought he'd keep it semi-covert so as to not potentially lose his influence...
Richard, I appreciate your courage in taking on these issues. Bell has a 'prophetic' voice in many ways if we will but listen. I am coming to believe more and more that the charge to make disciples is just that, a charge to His 'learners' to go and make more learners of each grouping. Within the context of how Jesus defined discipleship and kingdom- leaven, few, salt, light, mustard seed, etc,- I can't help but feel that what we know as 'church' and 'christianity' are not at all the truest vehicles of carrying forth the message of life that saves the world from self-destructive violence. It is the discovery of truths emodied in sacrifice/suffering, the victories of love and the vulnerability of naked faith- the journey leads to truth, and is truth. Our trational exclusive views of faith say far more about us than about God, the Transcendent. Perhaps we would do well to heed the admonishment of Jesus to John in Luke 9 when he reported to Jesus that the disciples tried to stop an unknown who was casting out demons in Jesus' name. Jesus said, "Leave him alone. If he's not against you, he's for you." Who are we to judge in any ultimate sense? What a freedom we have been given! God will bring all together as one...John 11.52 is that great promise as given by that same John in his comment on the purpose of Jesus.
Bell's videos were useful in the context of starting discussions with youth and young adults. I haven't read much of his writing, but I appreciate the fact that you were bold enough to say that you liked his writing. I am in a seminary context, and it would be "uncool" to like Bell. Whatever he has written in his book, he has taken a beating on the internet that has been tragic. (When was the last time that a Christian was attacked on Twitter, and ended up as trending item, before releasing a book?)

value: Blogger is an American online content management system (CMS) which enables multi-user blogs with time-stamped entries. Pyra Labs developed it before being acquired by Google in 2003.


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Patent US6575020 - Transducer for microfluid handling system - Google Patents
The present invention relates to integrated micro-cantilevers, micro-bridges or micro-membranes in micro-liquid handling systems. Such micro-liquid handling systems provide novel detection mechanisms for monitoring the physical, chemical and biological properties of fluids in such systems. The present...http://www.google.com/patents/US6575020?utm_source=gb-gplus-sharePatent US6575020 - Transducer for microfluid handling system
Publication number US6575020 B1
Application number US 09/563,331
Also published as US20030154771, US20070033990
Publication number 09563331, 563331, US 6575020 B1, US 6575020B1, US-B1-6575020, US6575020 B1, US6575020B1
Inventors Hasin Francois de Charmoy Grey, Tove Maria Henriette Jensenius, Jacob Thaysen, Anja Boisen
Original Assignee Cantion A/S
Patent Citations (18), Non-Patent Citations (12), Referenced by (111), Classifications (31), Legal Events (7)
US 6575020 B1
JPH06273303A * Title not available
WO1999038007A1 Jan 21, 1999 Jul 29, 1999 Cambridge University Technical Services Ltd. Sensor
1 D. R. Baselt et al., "A High-Sensitivity Micromachined Biosensor," Proceedings of the IEEE, vol. 85, No. 4, Apr. 1997, pp. 672-679.
2 J.K. Gimzewski et al., "Observation of a chemcal reaction using a micromechanical sensor," Chemical Physics Letters, Jan. 1994, vol. 217, Nos. 5,6, pp. 589-594.
3 J.P. Cleveland et al., "A nondestructive method for determining the spring constant of cantilevers for scanning force microscopy," Rev. Sci. Instrum., 64 (2) Feb. 1993, pp. 403-405.
4 Jianming Chen, "Sub-Nanogram Mass Sensor for In-Liquid Measurement," Ph.D. Thesis, Simon Fraser University, Dec. 1995.
5 L.P. Lee et al., "High aspect ratio polymer microstructures and cantilevers for bioMEMS usinglow energy ion beam and photolitography," Sensors and Actuators A 71 (1998) pp. 144-149.
6 L.P. Lee et al., "Key Elements of Transparent Teflon(R) Microfluidic System," Berkeley Sensor & Actuator Center, pp. 245-248.
7 L.P. Lee et al., "Key Elements of Transparent Teflon® Microfluidic System," Berkeley Sensor & Actuator Center, pp. 245-248.
8 R. Berger et al., "Surface Stress in the Self-Assembly of Alkanethiols on Gold," Science vol. 276, Jun. 1997, pp. 1942, 1945, 2021-2024.
9 R. Berger et al., "Thermal analysis using a micromechanical calorimeter," Appl. Phys. Lett. 69 (1), Jul. 1996, pp. 40-42.
10 R. Berger et al., Micromechanics: A Toolbox for Femtoscale Science: "Towards a Laboratory on a Tip", Elsevier Science 1997, Microelectronic Engineering 35, pp. 373-379.
11 R. Raiteri et al., "Measuring Electrochemically Induced Surface Stress with an Atomic Force Microscope," J. Phys. Chem., vol. 99, No. 43, 1995, pp. 15728-15732.
12 S.J. O'Shea et al., "Atomic force microscopy stress sensors for studies in liquids," J. Vac. Sci. Technol. B 14(2), Mar./Apr. 1996, pp. 1383-1385.
US6987898 * Jul 23, 2003 Jan 17, 2006 Lucent Technologies Inc. Molecular detection using an optical waveguide fixed to a cantilever
US7158693 * Sep 29, 2005 Jan 2, 2007 Lucent Technologies Inc. Molecular detection using an optical waveguide fixed to a cantilever
US8056398 * Feb 11, 2009 Nov 15, 2011 Kent State University Broad-range nanoliter rheometer
US20160138908 * Jun 26, 2014 May 19, 2016 Danmarks Tekniske Universitet Micromechanical photothermal analyser of microfluidic samples
CN1914498B Dec 3, 2004 Jan 4, 2012 麦克罗威斯克有限公司 Fluid probe
CN102269686B * Dec 3, 2004 May 6, 2015 麦克罗威斯克有限公司 流体探针
DE10333972B4 * Jul 25, 2003 Apr 10, 2014 Robert Bosch Gmbh Verfahren zum Herstellen eines Sensors für biochemische Messungen
WO2009008904A2 Jan 18, 2008 Jan 15, 2009 Cantimer Incorporated Microcantilever sensor for analyte detection
WO2009008904A3 * Jan 18, 2008 May 14, 2009 Cantimer Inc Microcantilever sensor for analyte detection
U.S. Classification 73/54.23, 73/54.25, 73/61.45, 73/54.24, 73/53.01
International Classification G01N35/00, G01N27/00, G01N9/00, G01N11/00, G01N11/16
Cooperative Classification G01N2291/0427, G01N2035/00237, G01N2291/02818, G01N29/022, G01N9/002, G01N11/16, G01N2291/0224, G01N29/30, G01N29/036, G01N2291/0255, G01N2291/0215, G01N2291/0256, G01N29/222, G01N11/00
European Classification G01N29/036, G01N29/02F, G01N29/30, G01N29/22F, G01N11/00, G01N11/16, G01N9/00B


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Jesse's Café Américain: SP 500 and NDX Futures Daily Charts - Brood of Vipers, Farcical Fed
SP 500 and NDX Futures Daily Charts - Brood of Vipers, Farcical Fed
If you have stock gains, now might be a good time to consider raising some cash on any rallies, and sitting on it for a while, until this global equities situation sorts itself out.
As you can see below, stocks are finding a footing near the lower bound of the 'trading range' I suggested that might try to establish. If they slip this range, barring intervention from the Fed and the Exchange Stabilization Fund, it could be a rough ride here, following China and Europe.
China *might* be finding a footing here. I am watching the Shanhai composite. This is not unknown in the pattern by which a bubble breaks. And have no doubt, China stocks were in a bubble.
I have heard that approximately 70+% of China stocks are no longer trading, having been halted to stem their losses. I am also seeing the usual abuses of any bubble, wherein people have leveraged up, pledging hypothecated real estate to buy stocks, and companies using their own stocks to secure loans. The US kicks off earnings season tonight with Alcoa. I am told that the rules prohibit US companies from buying their own stocks during the earnings quiet period. If this is so, then this will remove one of the bigger bullish factors from this distorted market.
The Fed minutes released this afternoon were 'hawkish.' As if. The Fed wants to raise rates off zero by about 50 bp just for their own purposes. They stopped caring about the real economy quite some time ago. They make noises to the contrary, but at the end of the day they are the servants and creatures of the Banks first, and the government second. And the devil take the rest.


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NSHMBA - New York Chapter: The 10 Biggest Minutes of Your Interview
This is a really interesting article I discovered in TheLadders.com. It analyzes some of the hidden meanings behind questions you may be asked during an interview.
Joe Turner 11/10/08 - TheLadders.com
Know the Four Most Important Questions Pay close attention to the four most important questions employers want answers to when they’re interviewing you:
(Also phrased as “Tell me a little about yourself,” “Why are you looking to change jobs?” or "What's your most important accomplishment to date?”)
Know the Company Do your homework. Always research the company before you interview. Know who they are, what their major challenges are today and the current "buzz" about them.
Remember the question, "Why are you here?" Show them that you've done your research and not only know something about their company, but also have several reasons for being enthusiastic about working for them. Let this enthusiasm carry over into your demeanor as you walk in the door. Know Your RoleFirst impressions count for a lot, especially in the job interview. You're on stage from the minute you enter the room. So play your role by first getting into character:
As a recruiter, Joe Turner has spent the past 15 years finding and placing top candidates in some of the best jobs of their careers. Author of “Job Search Secrets Unlocked,” Joe has interviewed on radio talk shows and offers free insider job search secrets at http://www.jobchangesecrets.com.
Posted by NSHMBA - New York Chapter at 9:27 AM


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Pivot Pad, Ignacio Salas-Humara Architect - Contemporary - Site And Landscape Plan - Austin - by Ignacio Salas-Humara Architect LLC
Pivot Pad, Ignacio Salas-Humara ArchitectContemporary Site And Landscape Plan, Austin
The project is a composition of elements that are tied together by a strong circulation axis--the boardwalk--that organizes guest parking at one end, takes the visitor through the carport, across a Zen courtyard and to the front door. From there it proceeds visually through the house, across the back yard and terminates at a wood deck that cantilevers over a limestone bluff that overlooks the creek below and the nature preserve beyond.
IMAGE: Ignacio Salas-Humara
John Hill added this to See What You Can Learn From a Floor PlanMay 28, 2012
This house is aligned with my modern tastes, and it helps illustrate that a plan is an important determinant of a building's style. The rectangular volumes of the garage, house, and lookout (from top to bottom) are linked by an external corridor. This lets each volume exist as a platonic shape, rather than as a conglomeration of boxes, as in the previous example. The house volume here intelligently aligns the bathrooms and other service spaces away from the water, allowing views from the living area and bedrooms to the vista.
eastcoast1957 added this to eastcoast1957's IdeasFeb 11, 2015
Metal exterior plus wood framed garage...open
Rodd added this to Rodd's House IdeasJun 3, 2012
"lookout" porch connected to house by walkway/bridge
Photos in Pivot Pad

value: Houzz is an American website and online community about architecture, interior design and decorating, landscape design and home improvement. It was founded in 2009 and is based in Palo Alto, California.


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SpecialSauce in the House: The Breakup
I broke up with my OB today.
But I told her I guessed it was time to cut the cord. (Har har.)
As you loyal blogoreaders know, I want a planned homebirth for my third - and FINAL - child. And my OB, unfortunately, only delivers at the hospital. In the feet-in-the-stirrups position. IF she happens to be around that day.
So it had to end. We just couldn't make it work. I have finally found a midwife, which is great. Thing is, I really like my OB. Over the past six years, I feel we've really developed a nice rapport. She is Korean-American, so she can relate to my Korean mother-in-law stories.
She also now has three kids, and two of them had speech delay. She was the one who encouraged me to get Sage evaluated and directed me toward the proper resources.
A couple weeks ago I went in to have her look at a large, painful lump under my armpit. We chatted for 20 minutes before we got down to business. And she even took the time to advise me to get a new bra, as I was spilling out all over (one of the few side benies to being knocked up).
When I saw her today for my 24-week checkup, she said she'd just read this article in the New York Times. It's about, in part, how homebirths aren't just for crunchy granola treehuggers anymore.
More and more professional women are deciding that they want a different birth than one offered at the hospital, where the nurses want you to be quiet and still and flat on your back. And where after the birth, seemingly every employee wants to come in and poke you or your child - usually when you've just gotten the little bugger to figure out how to nurse.
I know that many of my friends think I'm brave for even considering a home birth. Turns out the medical establishment here also isn't in favor. According to the Times story:
In contrast, health authorities in Britain view home births as a safe option for women at low risk of complications. In April 2007 the United Kingdom Department of Health rolled out plans for a “national choice guarantee,” to be put in place by the end of 2009, ensuring that all women can choose among giving birth at home, or at a hospital or another facility, and still have access to midwifery care"
Kinda interesting that places with universal health care are more apt to support alternative births. I wonder if that's why the U.S. has the highest rate of Caesarian Section in the the industrialized world.
According to a story last year in the Washington Post, the rate of C-sections in the U.S. was at a record-high 29 percent of all births in 2004.
That's more than 1 in 4. Meanwhile, the rate of C-sections for those attempting home birth is well under 10 percent (2 percent of the births my midwife attends result in C-section).
My OB would prefer me to give birth in a hospital. Just in case. And I would, if there was one that allowed a midwife delivery. But there isn't, so my option is home birth - a service my OB can't provide.
In other words, it's not her, it's me.
Of course I'm nervous. Leaving security for the unknown is always a little scary. But I know it's the best decision for me.
Besides, my OB assured me she'd take me back if changed my mind. And she'll definitely take me back when she's just my GYN.
So it wasn't really goodbye, just so long for now.


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Crane lorry for sale | in Dunmurry, Belfast | Gumtree
Volvo FM13 FM12 Globetrotter tractor unit
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Volkswagen Golf GTI Mk V Ignition Switch and Lock Cylinder
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See all 3 ads in Manual - Dunmurry, Belfast
Dunmurry, Belfast £3,995.00 (No VAT)
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Ad ID: 1270833468

value: Gumtree.com, known as Gumtree, is a British-based online classified advertisement and community website based at Hotham House, Richmond, London. Classified ads are either free or paid for depending on the product category and the geographical market.


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Licence payers should not suffer such appalling football “punditry” | Ian James Parsley
Licence payers should not suffer such appalling football “punditry”
If there is one thing this blog does more than anything, it is take commonly but lazily stated viewpoints and challenge them – rarely confirming them, usually refuting them. Nowhere does this become easier than watching BBC and ITV “punditry” during a major football championship.
Reciting “facts” as if they are beyond challenge is appallingly lazy and, in the era of the Internet, there is even less excuse for it than ever. In football, this reaches truly shocking levels, with pundits spewing utter nonsense and, astonishingly, being paid for it! We must demand better – and in the meantime be thankful for the geniuses on sites such as FourFourTwo’s Back of the Net for mercilessly mocking the whole charade.
Let us run through just a small selection of the nonsense trotted out by highly paid “experts” during just the first few games…
“I don’t care whether it’s intentional or not, if he’s gained an advantage I think it’s handball” (Lee Dixon) – er, you can think what you like, but that’s not what the laws of the game say and, curiously, it is the laws of the game and not Lee Dixon’s opinion that the referees are obliged to go by. The laws could not be clearer – intentional handball is a foul, unintentional handball isn’t. This even has the added advantage of being so incredibly simple anyone can understand it – except “expert pundits”, apparently.
“Italy are past masters at defending 1-0 leads” (the entire pundit universe) – if I was given a euro for every time I heard that I would probably be able to clear Italy’s sovereign debt, but the simple fact is there is no evidence for this contention whatsoever. Within my own time following international football, I can recall equalizers by the gloriously named Getov (for Bulgaria in the 1986 World Cup’s opening game), the gloriously talented Maradona (for Argentina in the next group game), the gloriously haired Caniggia (again for Argentina in the 1990 World Cup semi), the gloriously frustrating Caminero (for Spain, albeit ultimately in vain, in the 1994 World Cup quarter final), the glorious title-winning Wiltord (most memorably perhaps, for France deep in injury time of the Euro 2000 final), the gloriously heeled Ibrahimovic (cheekily but decisively for Sweden in the Euro 2004 group), the gloriously inept Zacchardo (into his own net against the United States even in Italy’s winning World Cup campaign of 2006) and of course twice already in Euro 2012 games in which many of the pundits had started trotting out the refrain… those are only the occasions I personally recall, and they probably amount to more losses of a 1-0 lead than any other major team in major tournaments during the period!
Bryan Robson scored the fastest goal in World Cup history (every English pundit is obliged to add this to the term “1982” just as they are obliged to add something about beating the Germans to “1966”, stated in each case as if informing the rest of us for the first time) – yes, a line no doubt beloved by English pundits who have had little else to celebrate at major tournaments and have themselves grown tired of mentioning the number “1966” complete with compulsory subsequent reference to Geoff Hurst, people on the pitch and “4-2”. A line, but not actually a fact… it is not, and was never, the fastest goal in World Cup history. Hakan Sukur scored the fastest goal in World Cup history for Turkey against South Korea in 2002; he broke a record not of twenty years’ standing, but of forty years’ standing, set by Masopust for Czechoslovakia against Mexico in 1962 (a game his team contrived to lose 3-1, as it happens).
The Irish Football Association… doesn’t have a team in the Finals. The rarely mentioned Football Association of Ireland, on the other hand, has. By the way, it represents the Republic of Ireland, not just “the Republic”. Just for reference, by virtue of being a “Republic”, it is not part of the United Kingdom and therefore is not a “home nation”. That’s kinda what all the trouble was about, you know?
“As they push up, there’s a risk they’ll leave more space at the back” (compulsory for pundits if either side is leading at any stage in the second half, except if the main commentator has already said it) – not wrong, but just so completely, unbelievably and gallingly obvious that could they just, you know, not say it?
2 thoughts on “Licence payers should not suffer such appalling football “punditry””
18 June, 2012 at 05:28
And just how much are they costing,probably 6 figure sums if the reputed payments to MOTD pundits are anything to go by.
18 June, 2012 at 06:30
Precisely Danny.
The commentators are rarely much better. Yesterday’s told us, for example: “Germany almost always get out of the group stage. The last time they failed was in 2000”.
Actually it was 2004 – in other words, since they won it, Germany has failed to progress beyond the group stage twice in three attempts! “Almost always?”
Here’s the reason I suspect he made that error: Germany was in the same group as England in 2000, but not in 2004. Parochialism is not confined to Northern Ireland!
To be fair, anyone can make a basic research error (although really that one was very basic). But it is the sheer blandness of the punditry, particularly the stuff we directly pay for on the BBC, which makes it so dire. At the end of a game where the Czechs have beaten the Poles 1-0 with a second half winner, is Alan Shearer seriously paid big bucks to say “Yes, I think the Czechs were the better team in the second half, you know, slightly better”? At least ITV has Roy Keane who is prepared to say a few things and Gordon Strachan who is funny (other than when he is referring to “Czechoslovakia”)…
RT @ewenglass: @ianjamesparsley Hi Ian, thought my wee RTE Storyland film might be of interest... twitter.com/rte/status/921… 22 hours ago


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Changes to traditional New York forests | Natural Resources
Changes to traditional New York forests	October 11, 2011
Filed under: Uncategorized — neasasen @ 5:08 pm
I am a Seneca Indian and my people have traditionally inhabited this region. Although we have traditionally been more centered around Cuba Lake region, where we recieved the the name, “People of the Great Hill” or O-non-dowa-gah, (pronounced, “O non da wat ga”), where legends tell us we were kept hostage on that hill by a giant man-eating two headed serpant, we have also encompassed most of Western New York, and as far as Ohio through conquest. It is very satisfying to know that my ancestors have walked where I walk, and nearly all of our modern major roadways are built on top of our old trails.
Even though this area of Western New York and southward into Pennsylvania were once inhabited by the Erie or Neutral tribes, we effectively wiped out their warriors and integrated the women and children into our own tribe, so arguably where I live today on the Cattaraugus Indian Reservation is also part of my ancestor’s traditional grounds. Although I imagine what life was like for those that made my existance possible, it had rarely occured to me that what I see today is not what it was like, and perhaps even substantially different.
Sometimes the elders have told us that traditional medicine is dying, and not merely beacuse of the intricate knowledge and dedication it takes to learn the different plants and techniques, but because the plants themselves are wiped from existance. They have also said when they flooded our land in Allegeny for the Kinzua Dam, many plants that grew along the banks were wiped out, so that we have lost much more than our land and homes that were there. Still I thought since it was the same area, it would have looked much the same, until I heard an interview on NPR of Charles Mann, the author of 1493:Uncovering the New World Columbus Created.
Charles Mann’s thesis is how the two cultures interacted with each other to produce changes in ecology of the Americas. He said prior to the arrival of the colonists, there were no worms in the Northeastern Woodlands, as the glacier had wiped them out in the Ice Age. When European worms were intoduced they ate the leaf liter in decidous forests which helped decimate the conditions needed for the sugar maple and allowed for more conifers. However worms were only brought incidentally on ships, the colonists purposely brought European bees. The bees affected the ecology in ways that are fully known yet, but their swarms often came before the arrival of the colonists, and the Indians associated the bees with the coming of the white man. The bees would have had tastes for European plants the bees were already accustomed to and actively established and promoted European plants over traditional American plants.
Reading Seneca and Iroquois ( Haudenosaunee) history and legends I know that the sugar maple provided an important part of a traditional diet. Our people would make a snack to take on journeys consisting of dried pounded corn and maple syrup, kind of like an energy bar, and perhaps some jerky if the journey or hunting excursion would be longer. Although our diet was primarily the crops named the three sisters; corn, beans and squash (which also provide a complete protein if eaten together by the way); game, fish, birds, wild strawberries, wild onions, and nuts rounded out our diet. Many stories relate a chesnut pudding that was made from grated chestnut, which sounds delicious. Birch bark was used for our canoes and sometimes for our longhouses. Elm bark was primarily used for longhouses, because the bark is waterproof and very hard when it becomes dried.
Sadly, after I listened to this interview I really realized that many of our traditional necessities are very limited and could not support an entire nation or nations in this area anymore. The sugar maple, birch and elm only exist in limited quantities. And while some animals and plants, such as the tasty springtime wild onion, are still plentiful, I have only seen the tiny elusive wild strawberry once. My people have a whole ceremony dedicated to that strawberry and it is noted that springtime is met with relish for this gift from the creator. This does not even account for all the plants used for medicine that have been extinguished. While you may have thought of the consequences of destroying the rainforest on eradicating a miracle cure, have you ever thought many such cures have already become eradicated with the change in ecology in your own back yard? Even though I do live in the same area as my ancestors, I cannot think that just because I see trees, plants, and animals outside, they are the same or even similar as what did exist. Moreover with the poles shifting and global warming, maybe my own grandchildren or great-grandchildren will come to the same conclusion when they think of the world as I see it now.


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SBFW ATLANTA Tickets, Sun, Jul 23, 2017 at 6:00 PM | Eventbrite
SBFW ATLANTA
65 MLK DRIVE
Small Boutique Fashion Week Atlanta Year 3
Watch as 20+ designers gather to show their collection to some of fashion’s most influential small scale buyers, boutique owners and press from around the globe. Commemorating the the 3rd year of Small Boutique Fashion Week Atlanta, this highly anticipated event has attracted talent from all over the globe including national and international press, participants and guests.
Enjoy premium cocktails and a record breaking Fashion show taking place on Atlanta’s longest runway at 1000+ feet.
Where will you be sitting this fashion week?
Have you ever been VIP Front row at a high end runway show? VIP tick holders get to Enjoy the royal experience sitting arm and arm with some of SBFW's most fashionable guests directly in the front row. VIP guests will also receive a free VIP celebrity gift bag full of special gifts from our sponsors.
Enjoy this red carpet event full of networking and glamour providing Atlanta a direct connect to the New York Fashion week crowd. Small Boutique fashion week is a critically acclaimed event and has been featured in many notable publication such as:
PIX 11 NIGHTLY NEWS
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Want to participate? visit smallboutiquefw.com
SBFW ATLANTA at Georgia Railroad Freight Depot
65 MLK DRIVE, Atlanta, GA 30303

value: Eventbrite is an American event management and ticketing website. The service allows users to browse, create, and promote local events.