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View: Gallery view Deutschland Germany Coat of Arms Shield Enamel Pi: Deutschland Germany Coat of Arms Shield Enamel Pin0 results. You may also like
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text: In addition to a full-service spa, Baiyun Hotel Guangzhou features an indoor pool and a health club. Dining is available at one of the hotel's 4 restaurants. Guests can unwind with a drink at one of hotel's 2 bars/lounges. High-speed wired and wireless Internet access is complimentary. This 4-star property offers access to a business center, limo/town car service, and meeting rooms. This business-friendly hotel also offers a sauna, spa services, and a library. For a surcharge, a roundtrip airport shuttle (available 24 hours) is offered to guests. 24-hour front desk Children's club (surcharge) Airport transportation (surcharge) Arcade/game room Total number of rooms - 511 Number of floors - 33 ATM/banking Number of bars/lounges - 2 Breakfast available (surcharge) Business center Free newspapers in lobby Conference space Dry cleaning/laundry service Elevator/lift Express check-in Express check-out Full-service spa Gift shops or newsstand Hair salon Health club Free wired high-speed Internet Children's club Tours/ticket assistance Laundry facilities Shopping on site Library Luggage storage Turkish bath/Hammam Limo or Town Car service available Spa treatment room(s) Meeting rooms 2 Multilingual staff Safe-deposit box at front desk Number of restaurants - 4 Sauna Number of buildings/towers - 3 Spa services on site Indoor pool Wedding services Free WiFi Free area shuttle Show all hotel amenities

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losi 1 2f8 | eBay
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BBB Business Profile | Harmon's Garage
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216 Cristich Ln Campbell, CA 95008-5426
Business Started: 6/01/2007
Principal: Lori Kern, Owner
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Patent US20060061259 - Semiconductor light emitting devices including patternable films comprising ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsSemiconductor light emitting devices include a semiconductor light emitting element having a light emitting surface, and a patternable film including transparent silicone and phosphor on at least a portion of the light emitting surface. The patternable film may be a photopatternable film and/or a printable...http://www.google.com/patents/US20060061259?utm_source=gb-gplus-sharePatent US20060061259 - Semiconductor light emitting devices including patternable films comprising transparent silicone and phosphor, and methods of manufacturing sameAdvanced Patent SearchPublication numberUS20060061259 A1Publication typeApplicationApplication numberUS 10/947,704Publication dateMar 23, 2006Filing dateSep 23, 2004Priority dateSep 23, 2004Also published asCN100539213C, CN101027785A, EP1794810A1, US7372198, US7591702, US20080076316, WO2006036251A1Publication number10947704, 947704, US 2006/0061259 A1, US 2006/061259 A1, US 20060061259 A1, US 20060061259A1, US 2006061259 A1, US 2006061259A1, US-A1-20060061259, US-A1-2006061259, US2006/0061259A1, US2006/061259A1, US20060061259 A1, US20060061259A1, US2006061259 A1, US2006061259A1InventorsGerald NegleyOriginal AssigneeNegley Gerald HExport CitationBiBTeX, EndNote, RefManPatent Citations (30), Referenced by (42), Classifications (11), Legal Events (3) External Links: USPTO, USPTO Assignment, EspacenetSemiconductor light emitting devices including patternable films comprising transparent silicone and phosphor, and methods of manufacturing same
US 20060061259 A1Abstract
Semiconductor light emitting devices include a semiconductor light emitting element having a light emitting surface, and a patternable film including transparent silicone and phosphor on at least a portion of the light emitting surface. The patternable film may be a photopatternable film and/or a printable film including transparent silicone and phosphor. The patternable film includes an aperture therein that exposes a portion of a light emitting surface, and a bond pad is provided on the light emitting surface in the aperture. A wire bond may be provided on the bond pad. Related methods of fabricating semiconductor light emitting devices are also provided. Images(3) Claims(40)
1. A semiconductor light emitting device comprising: a semiconductor light emitting element that includes a light emitting surface; and a patternable film comprising transparent silicone and phosphor on at least a portion of the light emitting surface. 2. A semiconductor light emitting device according to claim 1 wherein the patternable film comprising transparent silicone and phosphor includes an aperture therein that exposes a portion of the light emitting surface, and wherein the semiconductor light emitting device further comprises a bond pad on the exposed portion of the light emitting surface in the aperture. 3. A semiconductor light emitting device according to claim 2 further comprising a wire bond on the bond pad opposite the light emitting surface. 4. A semiconductor light emitting device according to claim 1 wherein the light emitting surface includes a face and a sidewall that extends from the face, and wherein the patternable film comprising transparent silicone and phosphor is on at least a portion of the face and on at least a portion of the sidewall. 5. A semiconductor light emitting device according to claim 4 wherein the patternable film comprising transparent silicone and phosphor is thicker on the at least a portion of the sidewall than on the at least a portion of the face. 6. A semiconductor light emitting device according to claim 5 wherein the patternable film comprising transparent silicone and phosphor is at least 10% thicker on the at least a portion of the sidewall than on the at least a portion of the face. 7. A semiconductor light emitting device according to claim 1 wherein the phosphor is configured to convert at least some light that is emitted from the light emitting surface such that light that emerges from the semiconductor light emitting device appears as white light. 8. A semiconductor light emitting device according to claim 1 further comprising: a patternable film comprising transparent silicone and free of phosphor, between the light emitting surface and the transparent patternable film comprising silicone and phosphor. 9. A semiconductor light emitting device according to claim 1 wherein the semiconductor light emitting element comprises a first semiconductor light emitting element and wherein the light emitting surface comprises a first light emitting surface, the semiconductor light emitting device further comprising: a second semiconductor light emitting element that is monolithically integrated with the first semiconductor light emitting element and that includes a second light emitting surface; and wherein the patternable film comprising transparent silicone and phosphor is on at least a portion of the first and second light emitting surfaces. 10. A semiconductor light emitting device according to claim 1 wherein the semiconductor light emitting element comprises a first semiconductor light emitting element and wherein the light emitting surface comprises a first light emitting surface, the semiconductor light emitting device further comprising: a second semiconductor light emitting element that includes a second light emitting surface; and a mounting tape; wherein the first and second light emitting devices are on the mounting tape and spaced apart from one another; and wherein the patternable film comprising transparent silicone and phosphor is on at least a portion of the first and second light emitting surfaces. 11. A semiconductor light emitting device according to claim 10 wherein the patternable film comprising transparent silicone and phosphor extends onto the mounting tape between the spaced apart first and second light emitting devices. 12. A semiconductor light emitting device according to claim 11 wherein the first light emitting surface includes a first sidewall facing the second semiconductor light emitting element, wherein the second light emitting surface includes a second sidewall facing the first semiconductor light emitting element and wherein the patternable film comprising transparent silicone and phosphor also extends onto at least a portion of the first and second sidewalls. 13. A semiconductor light emitting device according to claim 1 wherein the patternable film comprising transparent silicone and phosphor comprises a photopatternable film transparent comprising silicone and phosphor. 14. A semiconductor light emitting device according to claim 1 wherein the patternable film comprising transparent silicone and phosphor comprises a printable film comprising transparent silicone and phosphor. 15. A semiconductor light emitting device according to claim 1 wherein the patternable film comprising transparent silicone and phosphor is a first patternable film comprising transparent silicone and a first phosphor, the device further comprising: a second patternable film comprising transparent silicone and a second phosphor on the first patternable film comprising transparent silicone and a first phosphor, opposite the light emitting surface. 16. A semiconductor light emitting device according to claim 15 wherein the first phosphor comprises a green phosphor and the second phosphor comprises a red phosphor. 17. A method of fabricating a semiconductor light emitting device comprising: coating a patternable film comprising transparent silicone and phosphor on at least a portion of a light emitting surface of a semiconductor light emitting element. 18. A method according to claim 17 wherein coating comprises coating a photopatternable film comprising transparent silicone and phosphor on the at least a portion of a light emitting surface of a semiconductor light emitting element. 19. A method according to claim 17 wherein coating comprises printing a printable film comprising transparent silicone and phosphor on the at least a portion of a light emitting surface of a semiconductor light emitting element. 20. A method according to claim 18 further comprising: photopatterning the photopatternable film comprising transparent silicone and phosphor to form an aperture therein that exposes a portion of the light emitting surface. 21. A method according to claim 19 further comprising: printing the printable film comprising transparent silicone and phosphor on the at least a portion of a light emitting surface of a semiconductor light emitting element to define an aperture therein that exposes a portion of the light emitting surface. 22. A method according to claim 20 further comprising: forming a bond pad on the exposed portion of the light emitting surface in the aperture. 23. A method according to claim 21 further comprising: forming a bond pad on the exposed portion of the light emitting surface in the aperture. 24. A method according to claim 22 further comprising: bonding a wire to the bond pad opposite the light emitting surface. 25. A method according to claim 23 further comprising: bonding a wire to the bond pad opposite the light emitting surface. 26. A method according to claim 17 wherein the light emitting surface includes a face and a sidewall that extends from the face, and wherein coating comprises coating the patternable film comprising transparent silicone and phosphor on at least a portion of the face and on at least a portion of the sidewall. 27. A method according to claim 26 wherein coating comprises coating the patternable film comprising transparent silicone and phosphor thicker on the at least a portion of the sidewall than on the at least a portion of the face. 28. A method according to claim 27 wherein coating comprises coating the patternable film comprising transparent silicone and phosphor at least 10% thicker on the at least a portion of the sidewall than on the at least a portion of the face. 29. A method according to claim 17 wherein the phosphor is configured to convert at least some light that is emitted from the light emitting surface such that light that emerges from the semiconductor light emitting device appears as white light. 30. A method according to claim 20 wherein photopatterning comprises: selectively exposing the photopatternable film comprising transparent silicone and phosphor to define the aperture; and developing the photopatternable film comprising transparent silicone and phosphor that has been exposed, to form the aperture. 31. A method according to claim 30 further comprising: again developing the photopatternable film comprising transparent silicone and phosphor that has been developed, to enlarge the aperture. 32. A method according to claim 31 wherein the following is performed between developing and again developing: measuring light emission of the light emitting device; and wherein again developing is performed if the light emission of the light emitting device that is measured does not conform to at least one predefined parameter. 33. A method according to claim 32 wherein the at least one predefined parameter comprises an emission frequency spectrum. 34. A method according to claim 17 wherein coating is preceded by: coating a patternable film comprising transparent silicone and free of phosphor on at least a portion of the light emitting surface. 35. A method according to claim 17 wherein coating comprises: coating a transparent patternable film comprising silicone and phosphor on at least a portion of light emitting surfaces of a plurality of semiconductor light emitting elements that are monolithically integrated. 36. A method according to claim 17 wherein the patternable film comprising transparent silicone and phosphor is a first patternable film comprising transparent silicone and a first phosphor, the method further comprising: coating a second patternable film comprising transparent silicone and a second phosphor on the first patternable film comprising transparent silicone and a first phosphor. 37. A method according to claim 36 wherein the first phosphor comprises a green phosphor and the second phosphor comprises a red phosphor. 38. A method according to claim 17: wherein coating is preceded by mounting a plurality of semiconductor light emitting devices including corresponding light emitting surfaces, on a mounting tape; and wherein coating comprises coating a patternable film comprising transparent silicone and phosphor on at least a portion of the light emitting surfaces of the plurality of semiconductor light emitting elements that are mounted on the mounting tape. 39. A method according to claim 38: wherein the following is performed between mounting and coating: stretching the mounting tape to define spaces between adjacent semiconductor light emitting devices; and wherein coating comprises coating a patternable film comprising transparent silicone and phosphor on at least a portion of the light emitting surfaces of the plurality of semiconductor light emitting elements that are mounted on the mounting tape and on the spaces between adjacent semiconductor light emitting devices. 40. A method according to claim 39 wherein the semiconductor light emitting surfaces include sidewalls and wherein coating comprises: coating a patternable film comprising transparent silicone and phosphor on at least a portion of the light emitting surfaces of the plurality of semiconductor light emitting elements that are mounted on the mounting tape and on the spaces between adjacent semiconductor light emitting devices so as to coat at least a portion of sidewalls of the semiconductor light emitting elements with the patternable film comprising transparent silicone and phosphor. Description
FIELD OF THE INVENTION [0001] This invention relates to microelectronic devices and fabrication methods therefor, and more particularly to semiconductor light emitting devices and fabrication methods therefor. BACKGROUND OF THE INVENTION [0002] Semiconductor light emitting devices, such as Light Emitting Diodes (LEDs) or laser diodes, are widely used for many applications. As is well known to those having skill in the art, a semiconductor light emitting device includes a semiconductor light emitting element having one or more semiconductor layers that are configured to emit coherent and/or incoherent light upon energization thereof. It is also known that a semiconductor light emitting device generally is packaged to provide external electrical connections, heat sinking, lenses or waveguides, environmental protection and/or other functions. [0003] Continued developments in LEDs have resulted in highly efficient and mechanically robust light sources that can cover the visible spectrum and beyond. These attributes, coupled with the potentially long service life of solid state devices, may enable a variety of new display applications, and may place LEDs in a position to compete with the well entrenched incandescent and fluorescent lamps. [0004] It may be desirable to provide a phosphor for an LED, for example to provide solid-state lighting. In one example, LEDs that are used for solid-state white lighting may produce high radiant flux output at short wavelengths, for example in the range of about 380 nm to about 480 nm. One or more phosphors may be provided, wherein the short wavelength, high energy photon output of the LED is used to excite the phosphor, in part or entirely, to thereby down-convert in frequency some or all of the LED's output to create the appearance of white light. [0005] As one specific example, ultraviolet output from an LED at about 390 nm may be used in conjunction with red, green and blue phosphors, to create the appearance of white light. As another specific example, blue light output at about 470 nm from an LED may be used to excite a yellow phosphor, to create the appearance of white light by transmitting some of the 470 nm blue output along with some secondary yellow emission occurring when part of the LEDs output is absorbed by the phosphor. [0006] As is well known to those having skill in the art, at least two techniques may be used to incorporate phosphor material into a light emission path of an LED. In one technique, the phosphor may be suspended in the packaging and/or encapsulation that is provided with the LED, so that the phosphor is maintained in proximity to the LED. In an alternative approach, the phosphor material is coated on the LED itself. When coating a phosphor, a liquid binder, such as an epoxy, may be used, in which one or more phosphors is suspended. The phosphor-containing binder may be dispensed onto the LED prior to dispensing and curing a clear encapsulation epoxy. LEDs that employ phosphor coatings are described, for example, in U.S. Pat. Nos. 6,252,254; 6,069,440; 5,858,278; 5,813,753; and 5,277,840. Moreover, published U.S. patent application No. US 2004/0056260 A1, published on Mar. 25, 2004, entitled Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalls, and Fabrication Methods Therefor, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein, describes a light emitting diode that includes a substrate having first and second opposing faces and a sidewall between the first and second opposing faces that extends at an oblique angle from the second face towards the first face. A conformal phosphor layer is provided on the oblique sidewall. The oblique sidewall can allow more uniform phosphor coatings than conventional orthogonal sidewalls. SUMMARY OF THE INVENTION [0007] Semiconductor light emitting devices according to embodiments of the present invention include a semiconductor light emitting element that includes a light emitting surface, and a patternable film comprising transparent silicone and phosphor on at least a portion of the light emitting surface. The patternable film comprising transparent silicone and phosphor may be a photopatternable film and/or a printable film comprising transparent silicone and phosphor. In some embodiments, the patternable film comprising transparent silicone and phosphor includes an aperture therein that exposes a light emitting surface, and a bond pad is provided on the light emitting surface in the aperture. In other embodiments, a wire bond is provided on the bond pad opposite the light emitting surface. [0008] In still other embodiments, the light emitting surface includes a face and a sidewall that extends from the face, and the patternable film comprising transparent silicone and phosphor is on at least a portion of the face and on at least a portion of the sidewall. Moreover, in some embodiments, the patternable film comprising transparent silicone and phosphor is thicker, and in some embodiments at least 10% thicker, on at least a portion of the sidewall than on at least a portion of the face. [0009] In yet other embodiments, the phosphor is configured to convert at least some light that is emitted from the light emitting surface, such that light that emerges from the semiconductor light emitting device appears as white light. In other embodiments, a patternable film comprising transparent silicone and free of phosphor is provided between the light emitting surface and the transparent patternable film comprising silicone and phosphor. [0010] In yet other embodiments of the present invention, a second semiconductor light emitting element is monolithically integrated with a first semiconductor light emitting element, and the patternable film comprising transparent silicone and phosphor is provided on at least a portion of the light emitting surfaces of both the first and second monolithically integrated semiconductor light emitting elements. In still other embodiments, first and second semiconductor light emitting elements are provided on a mounting tape and spaced apart from one another, and the patternable film comprising transparent silicone and phosphor is provided on at least a portion of the light emitting surfaces of both the first and second semiconductor light emitting elements. In other embodiments, the patternable film comprising transparent silicone and phosphor also extends onto the mounting tape between the spaced apart first and second light emitting devices. In still other embodiments, the light emitting surfaces include sidewalls facing one another, and the patternable film comprising transparent silicone and phosphor extends onto at least a portion of the face and sidewalls. [0011] In still other embodiments of the present invention, multiple layers of patternable films comprising transparent silicone and phosphor may be provided on at least a portion of the light emitting surface. In some embodiments, the phosphors in the various layers may be the same. However, in other embodiments, a first phosphor may be provided in a first film and a second phosphor may be provided in a second film. For example, the first phosphor may be a green phosphor, and the second phosphor may be a red phosphor. Yet other combinations of two or more patternable films also may be provided. [0012] Semiconductor light emitting devices may be fabricated, according to various embodiments of the present invention, by coating a patternable film comprising transparent silicone and phosphor on at least a portion of a light emitting surface of a semiconductor light emitting element. In some embodiments, a photopatternable film comprising transparent silicone and phosphor is coated on at least a portion of the light emitting surface of a semiconductor light emitting diode. In other embodiments, a printable film comprising transparent silicone and phosphor is printed on at least a portion of a light emitting surface of a semiconductor light emitting element. In some embodiments, the photopatternable film comprising transparent silicone and phosphor is photopatterned to form an aperture therein that exposes a light emitting surface. In other embodiments, the printable film comprising transparent silicone and phosphor is printed on at least a portion of the light emitting surface of the semiconductor light emitting element, to define an aperture therein that exposes the light emitting surface. In yet other embodiments, a bond pad is formed on the light emitting surface of the aperture, and, in still other embodiments, a wire is bonded to the bond pad opposite the light emitting surface. [0013] In some embodiments, coating is performed such that the patternable film comprising transparent silicone and phosphor is coated on at least a portion of the face of the light emitting surface and on at least a portion of a sidewall thereof. In some embodiments the coating is thicker, and, in some embodiments, at least 10% thicker, on at least a portion of the sidewall than on at least a portion of the face. [0014] In some embodiments of the invention, photopatterning is performed by selectively exposing the photopatternable film comprising transparent silicone and phosphor to define the aperture, and then developing the photopatternable film comprising transparent silicone and phosphor that has been exposed, to form the aperture. In still other embodiments, the photopatternable film comprising transparent silicone and phosphor is again developed to enlarge the aperture. In yet other embodiments, light emission of a light emitting device is measured after developing the photopatternable film comprising transparent silicone, and phosphor and a second development is performed if the light emission of the light emitting device that is measured does not conform to at least one predefined parameter, such as an emission frequency spectrum. In still other embodiments, a photopatternable film comprising transparent silicone and free of phosphor may be coated on at least a portion of the light emitting surface prior to coating the photopatternable film comprising transparent silicone and phosphor. [0015] Method embodiments of the present invention also may be used to coat multiple semiconductor light emitting elements. In some embodiments, the patternable film comprising transparent silicone and phosphor is coated on at least a portion of multiple semiconductor light emitting elements that are monolithically integrated. In other embodiments a plurality of semiconductor light emitting devices are mounted on a mounting tape, and the multiple semiconductor light emitting devices on a mounting tape are then coated. In still other embodiments, the mounting tape is stretched prior to coating to define spaces between adjacent devices, and then coating is performed on the devices and on the spaces therebetween. In yet other embodiments, sidewalls of the devices also are coated. [0016] Yet other method embodiments of the present invention may coat more than one patternable film comprising transparent silicon and phosphor on at least a portion of the light emitting surface. In particular, in some embodiments, a patternable film comprising transparent silicone and a first phosphor is first coated on the light emitting surface. Then, a second patternable film comprising transparent silicone and a second phosphor is coated on the first patternable film comprising transparent silicone and a first phosphor. In some embodiments, the first phosphor is a green phosphor and the second phosphor is a red phosphor. Yet other combinations of two or more patternable films also may be provided.
BRIEF DESCRIPTION OF THE DRAWINGS [0017] FIGS. 1-6 are cross-sectional views of semiconductor light emitting devices according to various embodiments of the present invention. [0018] FIGS. 7-9 are flowcharts illustrating manufacturing methods for semiconductor light emitting devices according to various embodiments of the present invention.
DETAILED DESCRIPTION [0019] The present invention now will be described more fully hereinafter with reference to the accompanying drawings, in which embodiments of the invention are shown. However, this invention should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In the drawings, the thickness of layers and regions are exaggerated for clarity. Like numbers refer to like elements throughout. As used herein the term “and/or” includes any and all combinations of one or more of the associated listed items. [0020] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. [0021] It will be understood that when an element such as a layer or region is referred to as being “on” or extending “onto” another element, it can be directly on or extend directly onto the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or extending “directly onto” another element, there are no intervening elements present. It will also be understood that when an element is referred to as being “connected” or “coupled” to another element, it can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being “directly connected” or “directly coupled” to another element, there are no intervening elements present. [0022] It will be understood that, although the terms first, second, etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present invention. [0023] Furthermore, relative terms, such as “lower”, “base”, or “horizontal”, and “upper”, “top”, or “vertical” may be used herein to describe one element's relationship to another element as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in the Figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower”, can therefore, encompasses both an orientation of “lower” and “upper,” depending of the particular orientation of the figure. Similarly, if the device in one of the figures is turned over, elements described as “below” or “beneath” other elements would then be oriented “above” the other elements. The exemplary terms “below” or “beneath” can, therefore, encompass both an orientation of above and below. [0024] Embodiments of the present invention are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments of the present invention. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present invention should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated, typically, may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of the present invention. Moreover, terms such as “horizontal”, “vertical” and “perpendicular” indicate general directions or relationships rather than precise 0� or 90� orientations. [0025] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein. [0026] FIG. 1 is a cross-sectional view of a semiconductor light emitting device according to various embodiments of the present invention. Referring now to FIG. 1, a semiconductor light emitting device 100 according to various embodiments of the present invention includes a semiconductor light emitting element 110 that includes a light emitting surface 110 a. A patternable film comprising transparent silicone and phosphor 120 is provided on at least a portion of the light emitting surface 110 a. As used herein, “light” refers to any radiation, visible and/or invisible (such as ultraviolet) that is emitted by a semiconductor light emitting element 110. Moreover, as used herein, the term “transparent” means that at least some optical radiation that enters the patternable film comprising transparent silicone and phosphor 120 is emitted from the film 120. [0027] Patternable films comprising transparent silicone are well known to those having skill in the art. For example, Dow Corning� markets a series of low stress patternable silicone materials, designated as Dow Corning WL-3010 Printable Silicone and Dow Coming WL-5000 series Photopatternable Spin-On Silicones. Dow Coming WL-3010 Printable Silicone is a stencil-printable paste material designed to provide a low stress, low-temperature-curable patterned silicone for a variety of microelectronics applications. Although Dow Coming WL-3010 paste material is black, transparent paste also may be provided and/or the paste may become transparent after curing. Dow Corning WL-5000 series Photopatternable Spin-On Silicones include WL-5150, WL-5350 and WL-5351 Photopatternable Spin-On Silicones, that are designed to provide low stress, low temperature-curable transparent patterned films for a variety of micro- and optoelectronics applications. As noted in a product information brochure entitled “Information About Dow Corning� Brand Low-Stress Patternable Silicone Materials”, form no. 11-1108-01, copyright Dow Coming Corporation, 2003, these materials may have potential uses such as high-volume wafer level or other integrated circuit packaging applications; wafers, films, ceramics and laminates; stress-buffer layer applications; emerging applications using lead-free solder; front and backside wafer protective layers; redistribution layers; solder masks; negative photoresists; adhesive layers and sacrificial layers. [0028] Phosphors also are well known to those having skill in the art. As used herein, the phosphor may be Cerium-doped Yttrium Aluminum Garnet (YAG:Ce) and/or other conventional phosphors and may be mixed into a paste or solution of transparent patternable film comprising silicone using conventional mixing techniques, to thereby provide the transparent patternable film comprising silicone and phosphor 120. In some embodiments, the phosphor is configured to convert at least some light that is emitted from the light emitting surface 110 a such that light that emerges from the semiconductor light emitting device 100 appears as white light. [0029] The semiconductor light emitting element 110 may include a light emitting diode, a laser diode and/or other semiconductor device that includes one or more semiconductor layers, which may include silicon, silicon carbide, gallium nitride and/or other semiconductor materials, a substrate which may include sapphire, silicon, silicon carbide and/or other microelectronic substrates, and one or more contact layers, which may include metal and/or other conductive layers. In some embodiments, ultraviolet, blue and/or green LEDs may be provided. The design and fabrication of semiconductor light emitting devices are well known to those having skill in the art and need not be described in detail herein. [0030] For example, light emitting devices according to some embodiments of the present invention may include structures such as the gallium nitride-based LED and/or laser structures fabricated on a silicon carbide substrate, such as those devices manufactured and sold by Cree, Inc. of Durham, N.C. The present invention may be suitable for use with LED and/or laser structures that provide active regions such as described in U.S. Pat. Nos. 6,201,262; 6,187,606; 6,120,600; 5,912,477; 5,739,554; 5,631,190; 5,604,135; 5,523,589; 5,416,342; 5,393,993; 5,338,944; 5,210,051; 5,027,168; 5,027,168; 4,966,862 and/or 4,918,497, the disclosures of which are incorporated herein by reference in their entirety as if set forth fully herein. Other suitable LED and/or laser structures are described in published U.S. patent application Publication No. US 2003/0006418 A1 entitled Group III Nitride Based Light Emitting Diode Structures With a Quantum Well and Superlattice, Group III Nitride Based Quantum Well Structures and Group III Nitride Based Superlattice Structures, published Jan. 9, 2003, as well as published U.S. patent application Publication No. US 2002/0123164 A1 entitled Light Emitting Diodes Including Modifications for Light Extraction and Manufacturing Methods Therefor, the disclosures of which are hereby incorporated herein by reference in their entirety as if set forth fully herein. Furthermore, phosphor coated LEDs, such as those described in U.S. application Ser. No. 10/659,241, entitled Phosphor-Coated Light Emitting Diodes Including Tapered Sidewalls and Fabrication Methods Therefor, filed Sep. 9, 2003, the disclosure of which is incorporated by reference herein as if set forth fully, may also be suitable for use in some embodiments of the present invention. The LEDs and/or lasers may be configured to operate such that light emission occurs through the substrate. In such embodiments, the substrate may be patterned so as to enhance light output of the devices as is described, for example, in the above-cited U.S. patent application Publication No. US 2002/0123164 A1. [0031] FIG. 2 is a cross-sectional view of semiconductor light emitting devices according to other embodiments of the present invention. As shown in FIG. 2, the patternable film comprising transparent silicone and phosphor 120 includes an aperture 122 therein that exposes a portion of the light emitting surface 110 a. When a photopatternable film is used, photolithography including exposure and development may be used to define the aperture, as will be described in detail below. In contrast, when a printable film is used, screen or stencil printing may be used to define the aperture while coating the printable film. [0032] Still referring to FIG. 2, a bond pad 130 is provided on the light emitting surface 110 a in the aperture 122. As also shown, in some embodiments of the present invention, a wire bond 140 is provided on the bond pad 130 opposite the light emitting surface 110 a. Bond pads and wire bonds are well known to those having skill in the art and need not be described further herein. One example of bond pads and wire bonds is described in application Ser. No. 10/899,793, filed Jul. 27, 2004, entitled Light Emitting Devices Having A Reflective Bond Pad And Methods Of Fabricating Light Emitting Devices Having Reflective Bond Pads, assigned to the assignee of the present application, the disclosure of which is hereby incorporated herein by reference in its entirety as if set forth fully herein. [0033] Accordingly, embodiments of the present invention can allow a phosphor to be coated on a semiconductor light emitting element prior to fabricating a bond pad and performing wire bonding. The patternable film comprising transparent silicone can be patterned using conventional printing or photolithographic techniques and can remain transparent even when exposed to the relatively high temperatures, such as temperatures of about 280� C. or more that are used to fabricate a bond pad and perform a wire bond. Thus, by coating a semiconductor light emitting element with a patternable film comprising transparent silicone and phosphor according to some embodiments of the present invention, a layer of phosphor with a desired thickness and desired characteristics may be provided on a semiconductor light emitting element prior to fabricating a bond pad. This may allow the bond pad and wire bonding to take place without significantly degrading the operational characteristics of the semiconductor light emitting device. [0034] FIG. 3 is a cross-sectional view of semiconductor light emitting devices according to other embodiments of the present invention. As shown in FIG. 3, the light emitting surface includes a face 110 b and at least one sidewall 110 c that extends from the face 110 b. The patternable film comprising transparent silicone and phosphor 120 is on at least a portion of the face 110 b and on at least a portion of the sidewall 110 c. Moreover, as also shown in FIG. 3, in some embodiments of the present invention, the patternable film comprising transparent silicone and phosphor 120 is thicker on at least a portion of the sidewall 110 c than on at least a portion of the face 110 b. Thicker sidewall coatings thereby may be provided. [0035] In fact, in some embodiments, the patternable film comprising silicone and phosphor is at least 10% thicker on at least a portion of the sidewall 110 c than on at least a portion of the face 110 b. Accordingly, some embodiments of the present invention can provide phosphor-coated light emitting devices including tapered sidewalls, wherein the coating can be thicker on the sidewalls 110 c compared to the face 110 b of the light emitting element. This may contrast sharply with conventional light emitting devices, such as described in U.S. Pat. No. 6,642,652 to Collins III et al., in which variations in thickness of a phosphor coating are less than or equal to 10% of the average thickness. Heavily coated sidewall coatings thereby may be provided according to these embodiments of the present invention. [0036] FIG. 4 is a cross-sectional view of semiconductor light emitting devices according to yet other embodiments of the present invention. As shown in FIG. 4, a patternable film comprising transparent silicone and free of phosphor 420 is provided between the light emitting surface 110 a and the patternable film comprising transparent silicone and phosphor 120. In some embodiments, the film 420 may be provided by using any of the above-described Dow Corning brand low stress patternable silicone materials, without mixing phosphor therein. It will be understood, however, that other transparent patternable materials may be used and that other materials may be mixed in film 420 to provide light-scattering and/or other properties. Moreover, the same transparent patternable silicon material need not be used for films 120 and 420. [0037] FIG. 5 is a cross-sectional view of semiconductor light emitting devices according to other embodiments of the present invention. As shown in FIG. 5, a first semiconductor light emitting element 110 and a second semiconductor light emitting element 110′ are monolithically integrated, for example, by forming multiple semiconductor light emitting elements in a wafer in a conventional manner. The first semiconductor light emitting element 110 includes a first light emitting surface 110 a and the second semiconductor light emitting element 110′ includes a second light emitting surface 110 a′. As shown in FIG. 5, the patternable film comprising transparent silicone and phosphor 120 is provided on at least a portion of both the first and second light emitting surfaces 110 a, 110 a′. [0038] FIG. 6 is a cross-sectional view of semiconductor light emitting devices according to yet other embodiments of the present invention. In FIG. 6, first and second semiconductor light emitting elements 110 and 110′ are mounted on a mounting tape 610. The mounting tape 610 may be a conventional “blue tape” that is conventionally used to hold diced semiconductor light emitting elements. As shown in FIG. 6, the patternable film comprising transparent silicone and phosphor 120 is on at least a portion of the first and second light emitting surfaces 110 a and 110 a′, respectively. Moreover, as shown in FIG. 6, in some embodiments of the present invention, the first and second light emitting elements 110 and 110′ are spaced apart from one another on the mounting tape 610, for example, by stretching the mounting tape 610 after the semiconductor light emitting elements 110, 110′ are mounted thereon, to define a space 620 therebetween. The photopatternable film comprising transparent silicone and phosphor 120 extends onto the mounting tape 610 on the space 620 between the spaced apart first and second light emitting elements 110, 110′. [0039] Moreover, as also shown in FIG. 6, in yet other embodiments, the first light emitting surface 110 a includes a first sidewall 110 c facing the second semiconductor light emitting element 110′, and the second light emitting surface 110 a′ includes a second sidewall 110 c′ facing the first semiconductor light emitting element 110. The patternable film comprising transparent silicone and phosphor 120 extends onto at least a portion of the first and second sidewalls 110 c and 110 c′. Thus, after dicing the individual light emitting devices 110, 110′ and stretching the mounting tape 610, some embodiments of FIG. 6 can produce embodiments of FIG. 3, where the coating 120 is thicker on the sidewalls 110 c than on the face 110 b. [0040] It will be understood by those having skill in the art that embodiments of FIGS. 1-6 may be provided in various combinations and subcombinations according to various other embodiments of the present invention. [0041] Methods of fabricating semiconductor light emitting devices according to various embodiments of the present invention now will be described. For example, referring to FIGS. 1 and 7, a semiconductor light emitting device 100 may be fabricated by coating a patternable film comprising transparent silicone and phosphor 120 on at least a portion of a light emitting surface 110 a of a semiconductor light emitting element 110, as shown at Block 710 of FIG. 7. In some embodiments of the invention, where the patternable film comprising transparent silicone and phosphor 120 is a printable film comprising silicone and phosphor, coating at Block 710 may be performed by stencil printing or screen printing equipment. Moreover, in embodiments of the invention where the patternable film comprising transparent silicone and phosphor 120 is a photopatternable film comprising silicone and phosphor, coating at Block 710 may be performed by, for example, spin-coating the photopatternable film comprising transparent silicone and phosphor. [0042] Referring again to Block 710, according to other embodiments of the present invention, prior to coating the patternable film comprising transparent silicone and phosphor 120 on at least a portion of the light emitting surface of the semiconductor light emitting element at Block 710, at least a portion of the light emitting surface may be coated with a patternable film comprising transparent silicone and free of phosphor, for example as shown at 420 of FIG. 4. Coating of Block 710 then may be performed. [0043] Referring to Block 720 of FIG. 7 and to FIG. 2, if transparent photopatternable film is used, the photopatternable film comprising transparent silicone and phosphor 120 may be photopatterned to form an aperture 122 therein that exposes the light emitting surface 110 a. When a printable film comprising transparent silicone and phosphor is used, the screen- or stencil-printing itself may be used to define the aperture 122, and photopatterning of Block 720 need not be performed. It will also be understood that if operations of Blocks 710 and 720 are being performed at the wafer level, these operations also may be used to define and provide dicing streets for dicing the wafer. [0044] Referring now to Block 730 of FIG. 7 and again to FIG. 2, a bond pad 130 may be formed on the light emitting surface 110 a in the aperture 122. Finally, at Block 740, a wire bond 140 may be bonded to the bond pad 130 opposite the light emitting surface 110 a. [0045] Referring again to Block 710 of FIG. 7 and to FIGS. 3 and 6, coating may be performed so as to coat the patternable film comprising transparent silicone and phosphor 120 on at least a portion of the face 110 a, 1110 a′ and on at least a portion of the sidewall 110 c, 110 c′. As shown, for example, in FIG. 6, these embodiments may provide a patternable film comprising transparent silicone and phosphor 120 that is thicker on at least a portion of the sidewall 110 c, 110 c′, and, in some embodiments, at least 10% thicker, than on at least a portion of the face 110 a, 110 a′. [0046] FIG. 8 is a flowchart that illustrates operations for photopatterning according to various embodiments of the present invention, which may correspond to Block 720 of FIG. 7 when a transparent photopatternable film is used. In particular, referring to FIG. 8, at Block 810, the photopatternable film comprising transparent silicone and phosphor 120 is selectively exposed to define an aperture, such as the aperture 122 of FIG. 2. Then, at Block 820, the photopatternable film comprising transparent silicone and phosphor, that has been exposed, is developed (rinsed) to form the aperture 122. Exposure and development may take place as described in the above-cited “Information About Dow Corning� Brand Low-Stress Patternable Silicone Materials”, or using other conventional techniques. Referring again to FIG. 8, at Block 830, the light emission of the light emitting device is measured and it is determined whether the light emitting device that is measured conforms to at least one predefined parameter, such as a desired emission frequency spectrum. If yes, photopatterning ends. If not, the photopatternable film comprising transparent silicone and phosphor is again developed (rinsed) at Block 820 to enlarge the aperture. [0047] Embodiments of the present invention that include Block 830 may arise from a recognition that a single development step may not fully develop (wash away) unpatterned portions of the photopatternable film comprising transparent silicone and phosphor. Accordingly, if the light emission spectrum is not satisfactory, a controlled additional amount of the film, including the phosphor therein, may be removed by performing a second or subsequent development. Accordingly, individual semiconductor light emitting devices may be “trimmed” to meet a desired optical emission parameter. [0048] Operations of FIGS. 7 and 8 may be performed on an individual semiconductor light emitting device or on a plurality of semiconductor light emitting devices, either prior to or after dicing. For example, embodiments of FIG. 5 may be fabricated according to embodiments of Block 710 of FIG. 7 by coating a patternable film comprising transparent silicone and phosphor 120 on at least a portion of light emitting surfaces of a plurality of semiconductor light emitting elements that are monolithically integrated. Thus, in some embodiments, coating and/or other operations of FIG. 7 may be performed at the wafer stage prior to dicing. [0049] FIG. 9 is a flowchart of other operations that may be performed to coat, which may correspond to Block 710 of FIG. 7, according to other embodiments of the present invention. These embodiments also may correspond to devices of FIG. 6. [0050] In particular, referring to FIG. 9, at Block 910, a plurality of semiconductor light emitting devices are mounted on a mounting tape 610 such as conventional “blue tape.” These devices may be singulated devices from a wafer, or a wafer may be singulated after mounting on the mounting tape 610. Optionally, as shown in Block 920, if it is desired to thickly coat the sidewalls of the devices, the mounting tape 610 may be stretched to space apart the devices. In other embodiments, the devices may be placed on the mounting tape 610 in spaced apart relation. In yet other embodiments, the sidewalls may be coated without the need to space apart the devices. [0051] Then, at Block 930, a patternable film comprising transparent silicone and phosphor 120 is formed on at least a portion of the light emitting surfaces 110 a, 110 a′ of the plurality of semiconductor light emitting elements 110, 110′ that are mounted on the mounting tape 610. In some embodiments of Block 930, the patternable film comprising transparent silicone and phosphor 120 is also coated on the mounting tape 610 in the spaces 620 between adjacent semiconductor light emitting devices 110, 110′, as shown in FIG. 6. Moreover, in yet other embodiments at least a portion of the sidewalls 110 c, 110 c′ are also coated with the photopatternable film comprising 25 transparent silicone and phosphor 120. [0052] Embodiments of the present invention that were described above in connection with FIGS. 1-9 have described a single patternable film comprising transparent silicone and phosphor. However, any of these embodiments may also employ two or more patternable films comprising transparent silicone and phosphor. Thus, in some embodiments of the present invention, a first patternable film comprising transparent silicone and a first phosphor is provided or coated on at least a portion of the light emitting surface of a semiconductor light emitting element. A second patternable film comprising transparent silicone and a second phosphor is then provided or coated on the first patternable film comprising transparent silicone and a first phosphor, opposite the light emitting surface. Three or more layers of patternable film comprising transparent silicone and phosphor also may be provided. [0053] The phosphors in two or more of these multiple layers may be identical or may be different. Thus, for example, a blue semiconductor light emitting device may be provided by providing a first patternable film comprising transparent silicone and green phosphor, and a second patternable film comprising transparent silicone and red phosphor on the first patternable film comprising transparent silicone and green phosphor. In other embodiments, an ultraviolet semiconductor light emitting element may be provided with separate patternable films that comprise transparent silicone and red, green and blue phosphors, respectively. [0054] Moreover, in some embodiments, due to the competing absorption and emission processes, it may be desirable for the light emitting surface to excite the higher energy (emission) phosphors before the lower energy (emission) phosphors. Accordingly, in some embodiments of the present invention, a blue semiconductor light emitting element may be provided with a first patternable film comprising transparent silicone and green phosphor and a second patternable film comprising transparent silicone and red phosphor, so that the blue light that is emitted from the light emitting surface first interacts with the green phosphor and then interacts with the red phosphor. Separate cure and develop processes may be performed on an underlying patternable film prior to forming an overlying patternable film. Alternatively, a common cure and develop process may be performed. [0055] Additional discussion of various embodiments of the present invention now will be provided. In particular, some embodiments of the present invention allow patternable films comprising transparent silicone to be used to add phosphor to a light emitting element. Photopatternable material can be patterned with ultraviolet light just like a photoresist material and behaves as a negative patternable material where areas that are not exposed are later washed away during development. Thus, if a phosphor such as YAG:Ce is mixed with a silicone material of this type, and the appropriate wavelength of UV light is selected, for example, to provide low absorption of the phosphor and low reflection, the formation of a vertical LED structure with a blue LED and yellow coating can provide a “white” LED. Additionally, multiple phosphors can be used for better color rendering. It will be understood that as used herein “vertical” means a general direction that is perpendicular to the face 110 a, 110 a′ of a semiconductor light emitting element 110, 110′. [0056] In some embodiments of the present invention, the coating including phosphor on the semiconductor light emitting element can provide better Correlated Color Temperature (CCT) control and can allow packagers to make white devices by using a white chip, as opposed to putting a glob of phosphor in the package while packaging the chip. [0057] Moreover, as was described above in connection with FIG. 8, the photopatternable film comprising transparent silicone 120 may have poor selectivity when developing the pattern, in that some of the exposed region may also wash off. This can be considered an additional desirable feature in some embodiments of the invention. In particular, if too much coating is provided so that the desired optical property is not obtained, this poor selectivity may actually be used to erode away additional material to match the desired color point. This eroding away may be performed at the wafer level and/or at the die level. Moreover, as was described above, depending on the wafer/chip geometries, the coating can be performed at the wafer level and/or after dicing on a blue tape. [0058] Accordingly, some embodiments of the present invention can allow a manufacturer of a semiconductor light emitting device to open up the wire bond location while coating the rest of the light emitting wafer or chip, so that a vertical geometry may be used. The patternable material also may be used as a solder mask in that it fits the temperature limits that are desired for die attach. Also, due to the poor selectivity of the developing nature (i.e., erosion of the material that should not be soluble in the developer), this feature can be used to tune in the color point. [0059] Finally, as was described above, coating operations according to embodiments of the present invention may be performed at the wafer level, at the wafer level after probing and testing and/or at the stretched tape level. At the wafer level, the wafer may be coated, initially cured, exposed and developed to open up bond pads, and, optionally, dicing streets. An optional final cure may then be performed followed by wafer probing, dicing, sorting and packaging. Moreover, if a final cure has not been performed at the wafer level, the wafer may be diced, picked and tested, and material may be selectively removed to adjust the color point that was described in connection with FIG. 8. A final cure then may be performed at the die level followed by sorting and packaging. At the stretched tape level, a partial stretch may be performed after dicing, after which coating, curing, exposure and developing may be performed, followed by picking, testing and sorting as was already described. [0060] In the drawings and specification, there have been disclosed embodiments of the invention and, although specific terms are employed, they are used in a generic and descriptive sense only and not for purposes of limitation, the scope of the invention being set forth in the following claims. Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS4918497 *Dec 14, 1988Apr 17, 1990Cree Research, Inc.Blue light emitting diode formed in silicon carbideUS4966862 *Aug 28, 1989Oct 30, 1990Cree Research, Inc.Method of production of light emitting diodesUS5027168 *Aug 28, 1989Jun 25, 1991Cree Research, Inc.Blue light emitting diode formed in silicon carbideUS5210051 *Jun 5, 1991May 11, 1993Cree Research, Inc.High efficiency light emitting diodes from bipolar gallium nitrideUS5277840 *Apr 24, 1992Jan 11, 1994Mitsubishi Rayon Co., Ltd.Phosphor paste compositions and phosphor coatings obtained therefromUS5338944 *Sep 22, 1993Aug 16, 1994Cree Research, Inc.Blue light-emitting diode with degenerate junction structureUS5393993 *Dec 13, 1993Feb 28, 1995Cree Research, Inc.Buffer structure between silicon carbide and gallium nitride and resulting semiconductor devicesUS5416342 *Jun 23, 1993May 16, 1995Cree Research, Inc.Blue light-emitting diode with high external quantum efficiencyUS5523589 *Sep 20, 1994Jun 4, 1996Cree Research, Inc.Vertical geometry light emitting diode with group III nitride active layer and extended lifetimeUS5604135 *Aug 12, 1994Feb 18, 1997Cree Research, Inc.Method of forming green light emitting diode in silicon carbideUS5631190 *Oct 7, 1994May 20, 1997Cree Research, Inc.Method for producing high efficiency light-emitting diodes and resulting diode structuresUS5739554 *May 8, 1995Apr 14, 1998Cree Research, Inc.Double heterojunction light emitting diode with gallium nitride active layerUS5813753 *May 27, 1997Sep 29, 1998Philips Electronics North America CorporationUV/blue led-phosphor device with efficient conversion of UV/blues light to visible lightUS5858278 *Feb 20, 1997Jan 12, 1999Futaba Denshi Kogyo K.K.Phosphor and method for producing sameUS5912477 *May 20, 1997Jun 15, 1999Cree Research, Inc.High efficiency light emitting diodesUS6069440 *Apr 28, 1999May 30, 2000Nichia Kagaku Kogyo Kabushiki KaishaLight emitting device having a nitride compound semiconductor and a phosphor containing a garnet fluorescent materialUS6201262 *Oct 7, 1997Mar 13, 2001Cree, Inc.Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structureUS6252254 *Nov 30, 1998Jun 26, 2001General Electric CompanyLight emitting device with phosphor compositionUS6366018 *Oct 20, 1999Apr 2, 2002Sarnoff CorporationApparatus for performing wavelength-conversion using phosphors with light emitting diodesUS6395564 *Jul 3, 2001May 28, 2002Arima Optoelectronics Corp.Method for fabricating a light-emitting device with uniform color temperatureUS6635363 *Aug 21, 2000Oct 21, 2003General Electric CompanyPhosphor coating with self-adjusting distance from LED chipUS6642652 *Jun 11, 2001Nov 4, 2003Lumileds Lighting U.S., LlcPhosphor-converted light emitting deviceUS6747406 *Aug 7, 2000Jun 8, 2004General Electric CompanyLED cross-linkable phospor coatingUS6791116 *Apr 28, 2003Sep 14, 2004Toyoda Gosei Co., Ltd.Light emitting diodeUS20020015013 *Jun 26, 2001Feb 7, 2002Larry RagleIntegrated color LED chipUS20020123164 *Jan 25, 2002Sep 5, 2002Slater David B.Light emitting diodes including modifications for light extraction and manufacturing methods thereforUS20030006418 *May 7, 2002Jan 9, 2003Emerson David ToddGroup III nitride based light emitting diode structures with a quantum well and superlattice, group III nitride based quantum well structures and group III nitride based superlattice structuresUS20030080341 *Jan 24, 2002May 1, 2003Kensho SakanoLight emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods thereforUS20040056260 *Sep 9, 2003Mar 25, 2004Slater David B.Phosphor-coated light emitting diodes including tapered sidewalls, and fabrication methods thereforUS20040256974 *Feb 23, 2004Dec 23, 2004Lumileds Lighting, U.S., LlcPhosphor converted light emitting device* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS7863635Aug 7, 2007Jan 4, 2011Cree, Inc.Semiconductor light emitting devices with applied wavelength conversion materialsUS7897419Mar 1, 2011Cree, Inc.Color correction for wafer level white LEDsUS7919229Aug 17, 2007Apr 5, 2011Everlight Electronics Co., Ltd.Phosphor coating process for light emitting diodeUS8012774 *Sep 6, 2011SemiLEDs Optoelectronics Co., Ltd.Coating process for a light-emitting diode (LED)US8193544Jun 5, 2012Cree, Inc.Color correction for wafer level white LEDsUS8258528Sep 4, 2012Stanley Electric Co., Ltd.Semiconductor light-emitting deviceUS8264138Jan 19, 2007Sep 11, 2012Cree, Inc.Shifting spectral content in solid state light emitters by spatially separating lumiphor filmsUS8310143Aug 22, 2007Nov 13, 2012Cree, Inc.Lighting device and lighting methodUS8410508Sep 12, 2011Apr 2, 2013SemiLEDs Optoelectronics Co., Ltd.Light emitting diode (LED) package having wavelength conversion member and wafer level fabrication methodUS8441179May 11, 2011May 14, 2013Cree, Inc.Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sourcesUS8492746May 4, 2012Jul 23, 2013SemiLEDs Optoelectronics Co., Ltd.Light emitting diode (LED) dice having wavelength conversion layersUS8637883 *Mar 19, 2008Jan 28, 2014Cree, Inc.Low index spacer layer in LED devicesUS8680534Sep 7, 2011Mar 25, 2014Semileds CorporationVertical light emitting diodes (LED) having metal substrate and spin coated phosphor layer for producing white lightUS8722433May 27, 2013May 13, 2014SemiLEDs Optoelectronics Co., Ltd.Method for fabricating light emitting diode (LED) dice with wavelength conversion layersUS8841146Jul 31, 2012Sep 23, 2014SemiLEDs Optoelectronics Co., Ltd.Method and system for fabricating light emitting diode (LED) dice with wavelength conversion layers having controlled color characteristicsUS8912021May 17, 2012Dec 16, 2014SemiLEDs Optoelectronics Co., Ltd.System and method for fabricating light emitting diode (LED) dice with wavelength conversion layersUS9054282Dec 22, 2010Jun 9, 2015Cree, Inc.Semiconductor light emitting devices with applied wavelength conversion materials and methods for forming the sameUS9220149May 10, 2013Dec 22, 2015Cree, Inc.Lighting devices having remote lumiphors that are excited by lumiphor-converted semiconductor excitation sourcesUS9275979Feb 16, 2011Mar 1, 2016Cree, Inc.Enhanced color rendering index emitter through phosphor separationUS9312455Nov 14, 2014Apr 12, 2016SemiLEDs Optoelectronics Co., Ltd.Method for fabricating light emitting diode (LED) dice with wavelength conversion layersUS20070001178 *Sep 8, 2006Jan 4, 2007Tran Chuong ACoating processUS20070170447 *Jan 19, 2007Jul 26, 2007Led Lighting Fixtures, Inc.Shifting spectral content in solid state light emitters by spatially separating lumiphor filmsUS20080121911 *Nov 28, 2006May 29, 2008Cree, Inc.Optical preforms for solid state light emitting dice, and methods and systems for fabricating and assembling sameUS20080254393 *Aug 17, 2007Oct 16, 2008Everlight Electronics Co., Ltd.Phosphor coating process for light emitting diodeUS20080283864 *May 16, 2007Nov 20, 2008Letoquin Ronan PSingle Crystal Phosphor Light Conversion Structures for Light Emitting DevicesUS20090039365 *Aug 7, 2007Feb 12, 2009Andrews Peter SSemiconductor light emitting devices with applied wavelength conversion materials and methods of forming the sameUS20090039375 *Oct 15, 2008Feb 12, 2009Cree, Inc.Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the sameUS20090108269 *Jan 22, 2008Apr 30, 2009Led Lighting Fixtures, Inc.Illumination device having one or more lumiphors, and methods of fabricating sameUS20090236621 *Mar 19, 2008Sep 24, 2009Cree, Inc.Low index spacer layer in LED devicesUS20090321770 *Jun 25, 2009Dec 31, 2009Shuichi AjikiSemiconductor Light-Emitting DeviceUS20100025699 *Jul 30, 2008Feb 4, 2010Lustrous International Technology Ltd.Light emitting diode chip packageUS20110215355 *Sep 8, 2011Van De Ven Antony PPhotonic crystal phosphor light conversion structures for light emitting devicesUS20120022687 *Nov 10, 2010Jan 26, 2012Lextar Electronics Corp.Method for transferring chip and apparatus for transferring chipUSRE45796Jun 27, 2011Nov 10, 2015Cree, Inc.Light emitting diode arrays for direct backlighting of liquid crystal displaysCN101755347B *Jul 3, 2008Dec 2, 2015Lg伊诺特有限公司发光装置及其制造方法DE102007018837A1 *Apr 20, 2007Oct 2, 2008Osram Opto Semiconductors GmbhVerfahren zum Herstellen eines Lumineszenzdiodenchips und LumineszenzdiodenchipEP2074659A2 *Aug 22, 2007Jul 1, 2009Semi-photonics Co., Ltd.Coating processEP2541631A4 *Feb 25, 2011Mar 18, 2015Lightizer Korea Co LtdLight emitting diode and method for manufacturing sameWO2008116439A1 *Mar 6, 2008Oct 2, 2008Osram Opto Semiconductors GmbhMethod for the production of a luminescence diode chip and luminescence diode chipWO2009131627A1 *Apr 8, 2009Oct 29, 2009Cree, Inc.Semiconductor light emitting devices with separated wavelength conversion materials and methods of forming the sameWO2010074734A2 *Dec 18, 2009Jul 1, 2010Cree, Inc.Color correction for wafer level white ledsWO2010074734A3 *Dec 18, 2009Oct 21, 2010Cree, Inc.Color correction for wafer level white leds* Cited by examinerClassifications U.S. Classification313/499, 313/506, 445/24, 313/498International ClassificationH05B33/00, H05B33/14, H05B33/10, H01L33/50Cooperative ClassificationH01L2224/48463, H01L33/501European ClassificationH01L33/50BLegal EventsDateCodeEventDescriptionDec 20, 2004ASAssignmentOwner name: CREE, INC., NORTH CAROLINAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NEGLEY, GERALD H.;REEL/FRAME:015479/0147Effective date: 20040922Sep 20, 2011FPAYFee paymentYear of fee payment: 4Oct 28, 2015FPAYFee paymentYear of fee payment: 8RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About 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Amazon.com: Ascension: Music
Pep Love | Format: Audio Cassette
Amazon's Pep Love Store
Visit Amazon's Pep Love Store
Rigmarole › Pep Love
Fear Itself › Casual
He Think He Raw › Casual
Third Eye Vision › Hieroglyphics
Triangulation Station › Opio
B0071ZT102,B00000050H,B00005MLUA,B00005A8CF,B0006VBJQ2,B000JJRIOI,B000000506,B0001N6LZY,B000002HDO,B0000C6JUA,B00B361IWO,B008733O2I
Audio Cassette (July 24, 2001)
ASIN: B00005MJVU
Amazon Best Sellers Rank: #1,833,790 in Music (See Top 100 in Music)
1. Grime and Grit
2. Living Is Beautiful
4. The Fight Club
5. U.S./U.S. Interlude
6. The Onus (What You Are)
7. T.A.M.I.
8. My Energy
10. Act. Phenom
11. A New Religion
13. Karma (The Snake Charmer)
14. If You Can't Beat 'Em
16. Black People (Melanin Magnetic)
This album is a real triumph for hip hop. ”
www.antigravitybeats.com|
Pep Love dances all over this beat, letting his lyrics coast untouched high above the surface. ”
The Collectiv|
For the most part this is an excellent album. ”
Mishima Triad|
pep gets mad love....
By gavin redmond
Format:Audio CD For those that dont know, or that have just returned from mars after staying there for at least 6 joints, PEP is a member of the infamous HIEROGLYPHICS crew. This is in itself is his first proper moment in the spotlight, although he has blessed us with memorable verses on CASUAL's 1st album, SOULS OF MISCHIEF's 1st album and on the entire HIEROGLYPHICS albums "3rd eye vision" and "full circle". The best way to descibe this album, and his style for that matter, is to say its "soulful, intelligent, uplifting, skilled, jazzy and original". Altogether there are 16 cuts on the album and for the most part they are all solid enough with about 12 standout jewels. The remaining 4 are ok, just not as good as the others. The best few are, in my opinion,"living is beautiful", "the grind", "fight club", "us", "tami", "ascension", "act phenom" and the list could go on. Well worth the money and time you'll spend listening to this masterpiece AGAIN and AGAIN. Dynamite!!!!!!!!
By "theterrible"
Format:Audio CD Perhaps two tracks on this CD are OK. The rest of them are absolutely brilliant. Pep Love is an amazing lyricist, with meaningful words presented with a flow unlike I've heard from any other MC, even his Hiero Emperium crewmembers.Right away on this album, he shows his dynamic abilities. The first track, The Grim & Grit, is rugged with a heavy beat and minimal melody, and has a rugged lyrical style to match. The second track, Living is Beautiful, unlike the first track, is full of melodious instrumentals and a calmer flow by Pep. The whole album basically shows off his ability to be inovative in his rhyming abilities and superior vocabulary compared to most MCs; the production quality is also extremely top notch, with beautiful melodies and instrumental sampling to go along with strong beats. U.S., Pacific Heights, The Onus... probably three of my favorites, but they tend to vary daily when I drop it in my discman once again. It's hard to say this, but in my opinion Ascension is even better than Third Eye Vision and Deltron3030; I guarantee it, if you are a hip hop fan, whether you have heard Pep or Hiero before or not, this album will amaze you.
Format:Audio CD This album is incredible!! Highly recomended. Ascension is the album of 2001... hands down. hip hop fans...... don't sleep on this one.Get the album.
An incredible album!... a breath of fresh air!
Format:Audio CD "Ascension" is incredible... I always dug HIERO and I knew this was going to be a good album but I always considered Pep a little SOFT compared to the other MCS.. I never thought his rhyme delivery seemed natural even though he was a talented lyricist.. well.. he proved me wrong.. he built his skills up! This album is incredible!!! It truly blew me away.. Even on the 2nd song LIVING IS BEAUTIFUL.. I was thinking to myself, "Damn.. this is amazing!!!" The LP is like a breath of fresh air...it has a sunny quality to it. There is also an intelligence to it. PEPLOVE's rhyme style and flow has improved in a major way... If any of you could not decide about this, give it a chance.. IT's incredible!!! There is a song which uses the same melody as "WE AINT FRIENDS" by Nature but Pep Love does a much better job! There's not one wack song.. Grime And Grit is great.. FIGHT CLUB is dope.. IT's ON US displays Pep Love's story telling skills... thought-provoking stuff! Act Phenom has an incredible beat! I only wish DEL was on it and the song "Crooked Angels" was on it. The production includes Domino, Aplus, Evidence of Dialated Peoples, Jaybiz, Toure, Mako, and Casual.. cameos are by Tajai, Major Terror, the grouch, and Casual. - Check it out.. it's an incredible album!!!
Pep Love's "Ascension"
By Derrick C. Williams
Format:Audio CD I have to represent for my hometown of Greenville, MS. first. This is my first review of so I hope heads feel it. Pep Love's "Ascension" is for ALL those heads who want deeper lyrics and bangin' beats. Even the thugs have to bow down on this project. And it's funny, this album dropped with no advertising--only through a newsgroup's praise of it did I even hear about it. People searching for good music will miss out, and it's a shame. In my opinion, Hip Hop music is so stagnant lyrically. Well, albums from KRS-One and Sticky Fingaz did 2001 justice. Now, we have our third with "Ascension". Expand your mind.
HOLY [....]
Format:Audio CD dam... wheew...pep love's solo debut is just about the best release i've ever heared from the intire hieroglyphics crew. man, this is the best release of 2001 PERIOD... its all over. After this? Theres nothing I can think of that can top this release. on another plane running the game is right... words can't describe... GO OUT AND GET IT!!!!!! NOW!!
Ascension, Rasing music
Format:Audio CD Pep Loves debut is an amzing album in evryway. Each song is unqiue fresh and totaly tight. pep's Lyrics are off the hook, even mor ethen usual, and are insightful telling complex stories and commenting on the world. the albums starts of strong with "living is beautiful" which is all about valuing life and peps lyrics in this song set the craziness for the whole album. The beats are also very tight, the whole albums has a real power and heart to it , some of the best production can be seen on act. Phenom which has an unbeat et gritty beat that gets you going. This album is one of the greatest of all time in my opinion, amazing. This album just proves the power of hieroglyphics. A must have for hiphop fans, especially those who like amazing lyrics tight beats and unique albums
Pep Love rises above the garbage in Ascension Hieroglyphics crew member Pep Love has really created something special and useful with his Ascension album. Read more
Published 15 days ago by Alex Dionisio
Substantive Flow Master The Hieroglyphics are an extremely talented collective, hailing from Oakland California. You have the delightfully strange personality of Del Homosapien, the brazenly boastful... Read more
Published on May 21, 2011 by Ashley M. Blanchard
Enlightened Hip-Hop - Amazing! This man is all about uplifting, truth, love, and the dynamics of reality. He talks about energy, chi, our true selves, how fear is an illusion, the beauty of life, and the need to... Read more
Published on February 9, 2011 by C. Parker
Master Word Wizard, but album slightly lacking in areas Pep Love's Ascension is a great CD and displays Pep's lyrical mastery and delivery. He can twist words and deliver lyrics in such a way that is witty and simplistic and yet... Read more
Published on July 24, 2006 by eternal now
one of my favorites In one of the reviews someone taled about Acsension Side C. I got my copy through [...] . If your a fan of pep, then pick this up.
Published on November 12, 2005 by Dustin W. Vandevere
Absolutely one of the best MC's Pep Love from the Hieroglyphics is an underrated and superb MC. I've heard great stuff from him on the two Hiero crew albums, but he takes it even further on "Ascensions. Read more
Published on April 13, 2005 by DukeOfEarl
not a bad album, but . . . DISCLAIMER:Pep Love is one of my favorite rhymers, period, he's a warrior poet and i have mad respect for him. Read more
Published on December 5, 2004 by clear diggy
Why Not Use Domino? It really fascinates me that a group that has a producer like Domino available to it fails to use him so frequently these days. Read more
Published on April 15, 2003 by Brian Seiler
Common, Mos Def, Talib Kweli, .... Pep Love Finally some lyrics with content worth listening to. Pep has a distinct original style which flows nicely over the beats. This is a cd you put in the player and just listen. Read more
Hip Hop at its finest...... Instaed of writing a long review--- BUY THE ALBUM!!! SUPPORT REAL HIP HOP. AND CHECK OUT TRACK 7-TAMI. YOU WON'T BE DISAPOINTED.
Published on February 12, 2002 by Beatslaves
He Think He Raw ~ Casual Audio CD

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[The Shiga Microalbuminuria Reduction Trial]. - PubMed - NCBI
AbstractFormatSummarySummary (text)AbstractAbstract (text)MEDLINEXMLPMID ListApplySend to:Choose DestinationFileClipboardCollectionsE-mailOrderMy BibliographyCitation managerFormatSummary (text)Abstract (text)MEDLINEXMLPMID ListCSVCreate File1 selected item: 21661182FormatSummarySummary (text)AbstractAbstract (text)MEDLINEXMLPMID ListMeSH and Other DataE-mailSubjectAdditional textE-mailDidn't get the message? Find out why...Add to ClipboardAdd to CollectionsOrder articlesAdd to My BibliographyGenerate a file for use with external citation management software.Create File
See comment in PubMed Commons belowNihon Rinsho. 2010 Nov;68 Suppl 9:445-50.[The Shiga Microalbuminuria Reduction Trial]. [Article in Japanese]Hiroo K1, Oda T, Kushiyama T, Higashi K, Yamamoto K.Author information1Department of Nephrology, National Defense Medical College.PMID: 21661182 [PubMed - indexed for MEDLINE] SharePublication Types, MeSH Terms, SubstancesPublication TypesComparative StudyRandomized Controlled TrialMeSH TermsAlbuminuria/urineAmlodipine/therapeutic useAnimalsAntihypertensive Agents/therapeutic useDiabetes Mellitus, Type 2/drug therapy*Diabetes Mellitus, Type 2/urineDiabetic Nephropathies/drug therapy*HumansMiddle AgedProspective StudiesRatsTetrazoles/therapeutic useValine/analogs & derivativesValine/therapeutic useSubstancesAntihypertensive AgentsTetrazolesAmlodipinevalsartanValineLinkOut - more resourcesMedicalDiabetes Type 2 - MedlinePlus Health InformationDiabetic Kidney Problems - MedlinePlus Health InformationMiscellaneousAMLODIPINE BESYLATE - HSDBVALSARTAN - HSDBAMLODIPINE - HSDBVALSARTAN - HSDBL-Valine - HSDBPubMed Commons home

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