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Microsoft Posts Higher Net - Bloomberg For more local news from India, visit Bloombergquint.com Bloomberg the Company & Its ProductsBloomberg Anywhere Remote LoginBloomberg Anywhere LoginBloomberg Terminal Demo Request Bloomberg
Bloomberg Anywhere Remote LoginDownload SoftwareService Center MENU Homepage Markets Stocks Currencies Commodities Rates + Bonds Economics Magazine Benchmark Watchlist Economic Calendar Tech Silicon Valley Global Tech Venture Capital Hacking Digital Media Bloomberg West Pursuits Cars & Bikes Style & Grooming Spend Watches & Gadgets Food & Drinks Travel Real Estate Art & Design Politics With All Due Respect Delegate Tracker Culture Caucus Podcast Masters In Politics Podcast What The Voters Are Streaming Editors' Picks Opinion View Gadfly Businessweek Subscribe Cover Stories Opening Remarks Etc Features 85th Anniversary Issue Behind The Cover More Industries Science + Energy Graphics Game Plan Small Business Personal Finance Inspire GO Board Directors Forum Sponsored Content Sign In Subscribe Microsoft Posts Higher Net Siebel Systems reports a loss on revenue drop; Aetna raises 2005 guidance; plus more of Thursday's stocks in the news April 28, 2005 — 12:00 AM EDT Share on FacebookShare on TwitterShare on WhatsApp Share on LinkedInShare on RedditShare on Google+E-mailShare on TwitterShare on WhatsApp Share on FacebookShare on TwitterShare on WhatsApp Share on LinkedInShare on RedditShare on Google+E-mailShare on TwitterShare on WhatsApp After the close of trading Thursday, Microsoft (MSFT
) posted 23 cents, vs. 12 cents third-quarter earnings per share on $9.62 billion revenue. The software giant missed analysts' $9.83 billion revenue estimate.
Shares of Molson Coors (TAP
) tumbled Thursday after the brewer posted a 74-cent first quarter loss per share loss, vs. 13 cents EPS one year earlier, as $40.7 million in charges related to the recent merger that froemd the company and lower sales volume in key markets offset a 15% net sales rise. S&P downgraded the shares to sell from hold.
Shares of Martek Biosciences (MATK
) dropped sharply Thursday after the company cut its third-quarter revenue guidance to $38 million to $42 million and anticipates fiscal 2005 earnings per share to be "materially" lower than the current estimate. S&P maintains buy, and places estimates under review pending this morning's conference call. DaimlerChrysler (DCX
) posted 31 cents (28 euro cents) first-quarter earnings per share, vs. 53 cents (41 euro cents) on a 30% lower revenues. The U.S.-Germany auto manufacturer lost $1.23 billion with falling sales and quality problems in its Mercedes division amid and restructuring of its Smart operation.
) posted 40 cents (21.1 pence) vs. 34 cents (18.0 pence) first-quarter earnings per share on 3.7% higher turnover. Says on track to deliver its guidance of earnings per share growth in low double-digit range.
) posted $1.39, vs. $1.14 first-quarter earnings per share on a 13% revenue rise. The company raises $4.38 to $4.45 2005 operating earnings per share guidance to $4.52 to $4.57.
Starwood Hotels & Resorts (HOT
) posted 36 cents, vs. 16 cents first-quarter earnings per share on a 15% revenue rise. The company sees second-quarter earnings per share of 64 cents and $2.09 2005 earnings per share. The company, Lehman Brothers, and Starwood Capital are to make a bid for Le Meridien. Siebel Systems (SEBL
) posted a 1-cent first-quarter loss, vs. 6 cents earnings per share on 9% lower revenue. The company says license revenue declined 41% from year ago. S&P reiterates sell.
) posted 24 cents, vs. 19 cents second-quarter earnings per share on a 22% revenue rise. The company raises fiscal 2005 earnings per share guidance to $1.17 to $1.19. S&P reiterates hold.
Ask Jeeves (ASKJ
) posted 26 cents, vs. 23 cents first-quarter earnings per share (GAAP) on a sharp revenue rise. The online search portal sees 21 cents second-quarter earnings per share. It forecasts 90 cents to $1.05 2005 earnings per share on $380 million to $395 million revenue.
Alcatel (ALA
) posted 12 cents, vs. 26 cents first-quarter earnings per ADS despite a 3.7% revenue rise. The company sees low- to mid-single-digit growth rate in the second-quarter and 2005 revenues year-over-year, and says 2005 earnings should grow at a double-digit rate.
) posted 6 cents, vs. 5 cents second-quarter earnings per share on a slight sales rise. S&P cuts estimate and target.
) posted 46 cents, vs. 43 cents third-quarter earnings per share from continuing operations on 8% revenue rise. Current quarter earnings per share are below expectations. With lower sales growth this quarter, it now expects $1.87 to $1.90 fiscal 2005 earnings per share from continuing operations.
) receives "Wells Notice" from staff of the SEC regarding the adequacy of the company's disclosures in its financial reports relating to Medicare outlier reimbursements and stop-loss payments under managed care contracts.
Bowne & Co (BNE
) posted 11 cents, vs. 8 cents first-quarter earnings per share (GAAP) as lower expenses offset a 2.5% revenue drop.
) posted 45 cents, vs. 39 cents second-quarter earnings per share on a 13% revenue rise. The credit scoring company sees 44 cents third-quarter earnings per share on revenue of $205 million.
) posted a 5-cent first-quarter loss from continuing operations (GAAP), vs. 14 cents earnings per share as higher research and development and selling, general, and administrative costs offset a 7% revenue rise. The company sees $1.06 to $1.16 2005 earnings per share (GAAP) on $2 billion in revenue.
) posted 25 cents, vs. 27 cents first-quarter earnings per share on a 15% sales drop. The company notes first-quarter 2005 results include a $10 million one-time charge (6 cents per share) for resolution of all past and future payments claimed by Stan Lee. It maintains $1.07 to $1.12 2005 earnings per share guidance.
) posted 30 cents, vs. 40 cents first-quarter earnings per share (pro forma) as higher research and development and selling, general, and administrative costs offset a 9% revenue rise. S&P reiterates hold. Deutsche Bank reportedly upgrades to hold from sell.
Applebee's International (APPB
) posted 38 cents, vs. 35 cents first-quarter earnings per share on 3.7% higher system-wide comparable sales. It now expects to open more than 135 new restaurants in 2005, system-wide comparable sales to increase by at least 3%, and earnings per share to be in the $1.49 to $1.52 range.
Cadence Design Systems (CDN
) posted a breakeven first-quarter, vs. a 3-cent loss (GAAP) on a 10% revenue rise. The company sees 27 cents to 35 cents 2005 earnings per share on $1.24 billion to $1.30 billion in revenue.
) posted 78 cents, vs. 66 cents first-quarter earnings per share on a 6% revenue growth (excluding acquisitions). S&P maintains hold.
Nautilus Inc. (NLS
) posted 28 cents, vs. 19 cents first-quarter earnings per share on a 20% sales rise. The company sees 9 cents to 10 cents second-quarter earnings per share, and 25% sales growth. The company raises 2005 earnings per share guidance to $1.17 to $1.19 on 15% sales growth.
Skechers U.S.A. (SKX
) posted 25 cents, vs. 18 cents first-quarter earnings per share on an 11% revenue rise. It sees 21 cents to 26 cents second-quarter earnings per share on $245 million to $255 million in revenue. Before it's here, it's on the Bloomberg Terminal. LEARN MORE Earnings

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Hotel Gästehaus Alte Schule, Hofheim am Taunus, Germany - Booking.com
http://www.booking.com/hotel/de/gasthaus-alte-schule.html
Herrnhäuserstr. 2 / Recepturhof 1, 65719 Hofheim am Taunus, Germany
Lock in a great price for Gästehaus Alte Schule – rated 8 by recent guests!
Comfortable, clean, tidy, friendly staff, excellent breakfast, great value. A thoroughly enjoyable place to stay.
The Guest House was in the middle of Wallau. Good value for the money.
Ist gut organisiert, Personal nett, Zimmer geräumig.
ruhige Lage, flexibel bei An-und Abreise, nette Leute
Spätanreise war kein Problem. Hier wurde mir telefonisch eine Nummer mitgeteilt bei der ich mich melden konnte. Sehr nettes Personal!
moderne, klare Gestaltung des gesamten Hauses, sehr chic
Das Frühstück war sehr gut und eine große Auswahl! Wirklich TOP!!!
Das Frühstücksbüffet war super lecker! Nicht einmal lactosefreie Kaffeesahne fehlte, da könnten sich die großen Häuser ein Beispiel nehmen. Das Bad ist zwar nicht sehr modern, aber dafür war alles super sauber! Auch das habe ich in großen Häuser schon anders erlebt - dafür ein dickes Lob! Aufgrund der versteckten Lage ist es sehr ruhig bei Nacht, das war prima! Und zur Begrüßung der Gäste steht am Eingang frisches Obst und ein paar Naschereien - sehr nett!
Die Zimmer sind einfach, aber sauber. Das Frühstück ist für den Preis angemessen.
A hearty buffet breakfast can be booked at Gästehaus Alte Schule during the week. Guests also receive a 10% on lunch or dinner at the Bistrorante Fantasia, which is located directly in the courtyard of the guest house.
The Frankfurt Trade Fair can be reached within a 20-minute drive. Central Wiesbaden is 7.5 miles away.
Gästehaus Alte Schule is conveniently located 1.2 miles from the A3 and A66 motorways. A shuttle service to Frankfurt Airport can be arranged on request. This property also has one of the top-rated locations in Hofheim am Taunus! Guests are happier about it compared to other properties in the area.
Gästehaus Alte Schule has been welcoming Booking.com guests since May 16, 2013
When would you like to stay at Gästehaus Alte Schule?
The most recent booking for this hotel was made on Feb 22 at 2:52 AM from China.
1 hotel like Gästehaus Alte Schule was just booked on our site
5 Reasons to Choose Gästehaus Alte Schule
Facilities of Gästehaus Alte Schule
Bistrorante Fantasia Da Rita
Panorama Hotel has a review score of 9.2
See the 5 best hotels in Hofheim am Taunus, based on 2,520 verified hotel reviews on Booking.com.
“The Guest House was in the middle of Wallau. Good value for the money.
“Ist gut organisiert, Personal nett, Zimmer geräumig.”
“Kostenfreies WLAN und Parkplatz
Anbindung an Autobahn”
“ruhige Lage, flexibel bei An-und Abreise, nette Leute”
Customers who viewed Gästehaus Alte Schule also viewed:
Apartment Rhein Main is located in Hochheim am Main, just 14 miles from Frankfurt. Wiesbaden is 7 miles from the property. Most recent booking for this hotel was yesterday at 08:46
Showcasing a terrace and sauna, Amedia Boardinghouse Frankfurt Airport is located in Raunheim. Guests can enjoy the on-site restaurant. Private parking is available on site. Most recent booking for this hotel was today at 04:40
Just 900 metres from Frankfurt Airport, this hotel features a complimentary 2-way shuttle to/from the airport every 15 to 20 minutes around the clock. 8 people are looking right now
This design hotel lies in the Niederrad district of Frankfurt, directly between the city centre and Frankfurt Airport. It offers modern rooms, private parking, free Wi-Fi and is near the A5 motorway. 2 people are looking right now
See all guest reviews for Gästehaus Alte Schule
Newest Reviews for Gästehaus Alte Schule
Rinaldo Lunetta
눇Great restaurants near!
“Too Far From the Airport If You Don't Have a Car”
눉First, we asked for a quiet room and we faced a restaurant and had the church bells ringing every hour all night.
Second, the write up for this place said it was 15 minutes from the airport. It did not indicate it was by car and you would have to drive like a maniac. You couldn't reach the property unless you took a train to the main hub, took another train to the town then you had to take a bus to the property which was outside of the town. Not walkable, and it took over an hour and a half to get there.
Third, it is advertised that a shuttle would be available to the airport. Not so. We were then told that a taxi would be about 25 Euros, not so again. We had to pay 47 Euros which is not acceptable.
When you reach the property, if you are later than 4:30, you need to phone someone to get a code to get in. My question is sometimes travelers don't have a phone, they only have ipads for emails. What do you do then? Not much interaction with anyone that worked there.
The room itself needed some things that required fixing, the lamp, no bulb, the shower tap coming away from the wall and a cracked toilet seat.
“nice location close to Frankfurt airport”
눉no interaction with the staff, they were just not around when we were forcing us to leave cash payment in the room, also did not like that damn clock tower ringing the bell all night long, what was that about anyway?눇nice little town
눇Comfortable, clean, tidy, friendly staff, excellent breakfast, great value. A thoroughly enjoyable place to stay.
눉The only problem we had was that the reception was only manned during
certain hours. When we arrived early in the morning we had a problem
getting in as the front door was locked. Luckily for us someone was
leaving so we got in however the staff on duty did not speak English. It
created a small problem for us but we got there in the end. No problem
for German speakers. However the staff did try their best and it all got
sorted out in the end.
눇The Guest House was in the middle of Wallau. Good value for the money.
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type: global

value: This website is a Dutch online travel agency for lodging reservations & other travel products, and a subsidiary of Booking Holdings. It is headquartered in Amsterdam.The website has over 28 million listings.


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Learning to Teach in the Secondary School: A companion to school experience (Learning to Teach Subjects in the Secondary School Series) by Graeme Martin: 9781138787704 - AbeBooks.com
Home Graeme Martin Learning to Teach in the Secondary School: A companion to school...
ISBN 10: 1138787701 / ISBN 13: 9781138787704
· adopting a positive approach to managing behaviour to support learning
· ways pupils learn
· planning lessons, units of work and schemes of work
· motivating pupils
· inclusion and special educational needs
· using ICT and digital technologies
· pupil grouping, progression and differentiation
· managing time, workload and stress
· getting your first teaching post.
Marilyn Leask is Chair of the Education Futures Collaboration charity and was previously a teacher and Professor at Brunel University and the University of Bedfordshire, UK.
Sarah Younie is Reader in Education, Innovation and Technology at De Montfort University, UK.
Title: Learning to Teach in the Secondary School: A...
1. Learning to Teach in the Secondary School: A companion to school experience (Learning to Teach Subjects in the Secondary School Series) (Volume 2)
ISBN 10: 1138787701 ISBN 13: 9781138787704
Book Description Routledge, 2016. Paperback. Book Condition: New. book. Bookseller Inventory # M1138787701
2. Learning to Teach in the Secondary School: A Companion to School Experience
Book Description Taylor & Francis. Book Condition: Brand New. Dispatch Same Working Day, (Delivery 2-4 business days, Courier For Heavy/Expensive Items) Money Back Guarantee, Prompt Customer Service. Bookseller Inventory # 43539856
3. Learning to Teach in the Secondary School: A companion to school experience
Capel, S et al
Book Description Routledge, 2016. Book Condition: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has soft covers. In good all round condition. , 1500grams, ISBN:9781138787704. Bookseller Inventory # 6950350
4. Learning to Teach in the Secondary School
Book Description Taylor and Francis 2016-03-15, London, 2016. paperback. Book Condition: New. Bookseller Inventory # 9781138787704
5. Learning to Teach in the Secondary School
Book Description Routledge, 2016. PAP. Book Condition: New. New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. Bookseller Inventory # FT-9781138787704
6. Learning To Teach In The Secondary School
Book Description Book Condition: New. Bookseller Inventory # 25072883-n
7. Learning to Teach in the Secondary School: A Companion to School Experience (7th Revised edition)
Book Description Taylor & Francis Ltd. Paperback. Book Condition: new. BRAND NEW, Learning to Teach in the Secondary School: A Companion to School Experience (7th Revised edition), Susan Capel, Marilyn Leask, Sarah Younie, Learning to teach involves hard work and careful preparation. To become an effective teacher requires pedagogical and subject knowledge, an understanding of your pupils and how they learn, and the confidence to respond to dynamic classroom situations. Learning to Teach in the Secondary School is the market leading text for all undergraduate, postgraduate and school-based routes to qualified teacher status. It offers an in-depth and practical introduction to the knowledge, skills and understanding needed to become a confident and effective teacher. With a focus on evidence-based practice, the book includes a wealth of examples to demonstrate how to successfully apply theory to practice, and how to critically analyse your practice to maximise pupil learning. This 7th edition is fully updated in light of the latest initiatives, evidence and research in the field, offering comprehensive coverage, unit by unit, of the key concepts and skills addressed on initial teacher education courses in preparation for work in schools. The wide range of pedagogical features support both university based work - including that up to Masters Level - and school-based initial teacher education, and are designed to help you develop those qualities that lead to good practice and a successful future in education. Written by expert practitioners, thirty-six essential units include: * adopting a positive approach to managing behaviour to support learning * ways pupils learn * planning lessons, units of work and schemes of work * motivating pupils * assessment * inclusion and special educational needs * using ICT and digital technologies * pupil grouping, progression and differentiation * managing time, workload and stress * getting your first teaching post. Learning to Teach in the Secondary School provides practical help and guidance for many of the situations and potential challenges you are faced with in school. Supported by the Learning to Teach Subjects in the Secondary School Series, it is an essential purchase for every aspiring secondary school teacher. Bookseller Inventory # B9781138787704
8. Learning To Teach In The Secondary School: A Companion To School Experience, 7Th Edition
Book Description Book Condition: Brand New. Brand New Original US Edition, Perfect Condition. Printed in English. Excellent Quality, Service and customer satisfaction guaranteed!. Bookseller Inventory # AIND-77135
9. Learning To Teach In The Secondary School: A Companion To School Experience, 7Th Edition
Book Description Book Condition: New. Brand New Book In Mint condition. Shipping with Trackable Method. No APO/FPO Addresses Please. Bookseller Inventory # 9781138787704NHS
10. Learning To Teach In The Secondary School: A Companion To School Experience, 7Th Edition
Book Description Book Condition: New. New. US edition. Perfect condition. Customer satisfaction our priority. Bookseller Inventory # ABE-FEB-79154

value: This website is an e-commerce global online marketplace with seven websites that offer books, fine art, and collectables from sellers in over 50 countries. Launched in 1996, it specialises in used, rare and out-of-print books.


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Python script html email form Freelancers and Jobs - Freelancer
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text:
Patent US20050167693 - Formation of Ohmic contacts in III-nitride light emitting devices - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsP-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment,...http://www.google.com/patents/US20050167693?utm_source=gb-gplus-sharePatent US20050167693 - Formation of Ohmic contacts in III-nitride light emitting devicesAdvanced Patent SearchPublication numberUS20050167693 A1Publication typeApplicationApplication numberUS 11/095,854Publication dateAug 4, 2005Filing dateMar 30, 2005Priority dateJun 5, 1998Also published asEP1221723A2, EP1221723A3, US6657300, US6914272, US7345323, US20020008243, US20040075097Publication number095854, 11095854, US 2005/0167693 A1, US 2005/167693 A1, US 20050167693 A1, US 20050167693A1, US 2005167693 A1, US 2005167693A1, US-A1-20050167693, US-A1-2005167693, US2005/0167693A1, US2005/167693A1, US20050167693 A1, US20050167693A1, US2005167693 A1, US2005167693A1InventorsWerner Goetz, Michael Camras, Changhua Chen, Xiaoping Chen, Gina Christenson, R. Kern, Chihping Kuo, Paul Martin, Daniel SteigerwaldOriginal AssigneeGoetz Werner K., Camras Michael D., Changhua Chen, Xiaoping Chen, Christenson Gina L., Kern R. S., Chihping Kuo, Martin Paul S., Steigerwald Daniel A.Export CitationBiBTeX, EndNote, RefManReferenced by (10), Classifications (15), Legal Events (1) External Links: USPTO, USPTO Assignment, EspacenetFormation of Ohmic contacts in III-nitride light emitting devices
US 20050167693 A1Abstract
P-type layers of a GaN based light-emitting device are optimized for formation of Ohmic contact with metal. In a first embodiment, a p-type GaN transition layer with a resistivity greater than or equal to about 7 Ω cm is formed between a p-type conductivity layer and a metal contact. In a second embodiment, the p-type transition layer is any III-V semiconductor. In a third embodiment, the p-type transition layer is a superlattice. In a fourth embodiment, a single p-type layer of varying composition and varying concentration of dopant is formed. Images(7) Claims(9)
1. A light-emitting diode comprising: a substrate; an n-type layer of GaN formed over the substrate; an active region, formed over the n-type layer; a p-type AlxGa(1-x)N (0≦x≦1) layer, formed over the active region; a p-type transition layer, formed over the p-type AlxGa(1-x)N layer, the p-type transition layer comprising a superlattice, the superlattice further comprising: a first sublayer of doped p-type material; a second sublayer of material, wherein a concentration of dopant in the second sublayer is less than a concentration of dopant in the first sublayer; and an n-type contact and a p-type contact, the n-type contact being connected to the n-type layer, the p-type contact being connected to the p-type transition layer. 2. The light-emitting diode of claim 1 wherein the dopant is Mg and the dopant concentration of the first sublayer is about 1 e20 cm−3 to about 5e21 cm−3. 3. The light-emitting diode of claim 1 wherein the dopant is Mg and the dopant concentration of the second sublayer is undoped to about 1 e20 cm−3. 4. The light-emitting diode of claim 1 wherein each of the first and second sublayers has a thickness from about 2 to about 20 nm. 5. The light emitting diode of claim 1 wherein a driving voltage of the light emitting diode is less than about 3.5 volts. 6. A light emitting diode comprising: a substrate; an n-type layer of GaN formed over the substrate; an active region, formed over the n-type layer; a p-type AlxGa(1-x)N (0≦x≦1) layer, formed over the active region; a p-type transition layer, formed over the p-type AlxGa(1-x)N layer, the p-type transition layer comprising a sublayer of a p-type doped material and a sublayer of elemental dopant; and an n-type contact and a p-type contact, the n-type contact being connected to the n-type layer, the p-type contact being connected to the p-type transition layer. 7. The light emitting diode of claim 6 wherein the dopant is Mg. 8. The light emitting diode of claim 6 further comprising a p-type conductive layer of GaN, formed over the p-type AlxGa(1-x)N layer. 9. The light emitting diode of claim 6 wherein a driving voltage of the light emitting diode is less than about 3.5 volts.
CROSS REFERENCE TO RELATED APPLICATIONS This application is a divisional of application Ser. No. 10/721,440, filed Nov. 24, 2003, which is a divisional of U.S. Pat. No. 6,657,300, granted Dec. 2, 2003, which is a continuation-in-part of application Ser. No. 09/092,065, filed Jun. 5, 1998, now abandoned. Application Ser. No. 10/721,440, U.S. Pat. No. 6,657,300 and application Ser. No. 09/092,065 are incorporated herein by reference.
BACKGROUND 1. Field of Invention The present invention is related to the manufacture of III-V light emitting and laser diodes, particularly towards improving the characteristics of the electrical contact to the p-type portion of the diode. 2. Description of Related Art Gallium nitride (GaN) compounds have wavelength emissions in the entire visible spectrum as well as part of the UV. FIG. 1 illustrates a typical GaN-based light emitting diode (LED). Currently, most GaN-based LEDs are epitaxially grown on a sapphire or silicon carbide (SiC) substrate. A double hetero-structure that includes a nucleation layer, n-type layer, active region, p-type AlGaN layer, and a p-type layer of GaN is formed on the substrate. In general, the ability to fabricate ohmic contacts to the p-type layer is essential for the realization of reliable light emitting diodes and laser diodes. Ohmic contacts to p-type GaN are difficult to achieve because the attainable hole concentration is limited for Mg-doped III-nitride based semiconductors. In addition, many light-emitting diodes and vertical cavity surface-emitting laser diodes use thin, transparent metal contacts. The choice of metals is limited and metal layers need to be thin, e.g. <15 nm, to reduce light absorption. Because there is poor lateral current spreading in p-type GaN, the metal layers typically cover nearly the entire device area. P-type conductivity for GaN is achieved by doping with Mg, which substitutes for gallium in the GaN lattice and acts as an acceptor (MgGa). MgGa introduces a relatively deep acceptor level into the band gap of GaN. As a consequence, only 1% of the incorporated Mg acceptors are ionized at room temperature. To illustrate, a Mg concentration ([Mg]) of ˜5e19 cm−3 is needed to achieve a room temperature hole concentration of ˜5e17 cm−3. Further, Mg-doped GaN requires a post-growth activation process to activate the p-type dopants. The post-growth activation process may be, for example, thermal annealing, low-energy electron-beam irradiation, or microwave exposure. For conductivity-optimized Mg-doped GaN layers, [Mg]<5 e19 cm−3, the acceptor concentration (NA) is about equal to the atomic Mg concentration and the resistivity can be around 1 Ω cm or less. These layers may be referred to as “p-type conductive layers”. Increasing the Mg content beyond approximately 5e19 cm−3 does not translate to higher acceptor concentration. Typically, a reduction of NA is observed when the [Mg] exceeds a certain maximum concentration and the layer becomes resistive. SUMMARY P-type layers of a III-nitride-based light-emitting device are optimized for formation of an Ohmic contact with metals. In some embodiments, a p-type transition layer is formed between a p-type conductivity layer and the metal contact. The p-type transition layer may be a GaN layer with a resisitivity greater than 7 ohm-centimeters, a III-nitride layer, a III-nitride layer with added As or P, or a superlattice with alternating highly doped or elemental dopant sublayers and lightly doped or undoped sublayers. In some embodiments, the p-type layer is continuous with varying levels of dopant. The concentration of dopant in the region of the p-type layer adjacent to the p-contact is greater than the concentration of dopant in the region of the p-type layer adjacent to the active region. The p-type layer may also have a varying composition, for example of Al or In or both.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 illustrates a prior art light-emitting diode. FIG. 2 illustrates a light-emitting diode according to a first embodiment of the present invention. FIG. 3 illustrates NA plotted as a function of [Mg]. FIGS. 4A and 4B demonstrate the I-V characteristics for a Ni/Au—Mg-doped GaN contact in “back-to-back” configuration for the metals deposited on a p-type conductive layer (A) and on a p-type transition (B) layer. FIG. 5A demonstrates the relationship between p-contact barrier height and resistivity for Mg-doped GaN layers. FIG. 5B demonstrates the effect of contact annealing on the Ni/Au—Mg-doped GaN contact barrier for p-type conductive and for p-type transition layers where the p-type conductivity was activated by two different RTA (5 min) activation processes (600� C. and 850� C.). FIG. 6 demonstrates the relationship between bandgap energy and lattice parameter for the AlInGaN material system. FIG. 7 illustrates a light-emitting diode according to a third embodiment of the present invention. FIG. 8 illustrates a light-emitting diode according to a fourth embodiment of the present invention. FIG. 9 illustrates the variation of Al and In composition and Mg concentration across the p-type layer of several examples of one embodiment of the light-emitting diode illustrated in FIG. 8.
DETAILED DESCRIPTION FIG. 2 schematically illustrates a GaN light-emitting diode 10 according to a first embodiment of the present invention. A nucleation layer 12 is grown over a substrate 14, for example Al2O3, SiC, or GaN. An n-type layer 16 of GaN that is doped with Si is fabricated over the nucleation layer 12. An active region 18 of InGaN is fabricated over the n-type layer 16. A p-type layer 20 of AlGaN:Mg is fabricated over the active region 18, followed by a p-type layer 22 of Mg-doped GaN that has been optimized for conductivity (p-type conductivity layer), followed by a p-type transition layer 24 deposited over the p-type layer 22. Metal contacts 26A and 26B are applied to the n-type layer 16 and the p-type transition layer 24, respectively. The metal contacts may be transparent or opaque. P-type transition layer 24 is optimized to form a good Ohmic contact with the metal layer. In the first embodiment, the material of p-type transition layer 24 is a GaN-based layer that contains a higher atomic Mg but a lower acceptor/hole concentration when compared to the p-type conductivity layer 22. In FIG. 3, the dependence of NA is illustrated as a function of [Mg]. Curve 30 illustrates Mg concentrations and resulting acceptor concentrations for a specific set of growth conditions. Other growth conditions may cause the curve to shift up or down or left or right, but the shape of the curve is expected to be approximately the same as curve 30 regardless of the growth conditions. As illustrated by curve 30, when a GaN-based film is highly doped with Mg, the acceptor concentration decreases, thus the film becomes highly resistive. This behavior is a typical of other III-V semiconductors. Exemplary Mg and acceptor concentrations for p-type conductivity layers are shown in region 34. Typically, p-type conductivity layer 22 has a [Mg] less than approximately 5e19 cm-3, NA˜[Mg], and resistivities of about 1 Ω cm or less. In contrast, p-type transition layer 24 is a highly resistive film having a [Mg]>about 5e19 cm−3, and NA<<[Mg]. The high Mg doping may be achieved by adjusting the growth conditions to promote the Mg incorporation into the solid phase, for example by increasing the Mg/Ga ratio in the gas phase. The Mg and acceptor concentrations for embodiments of p-type transition layer 24 are shown in region 32. Region 32 of FIG. 3 illustrates an approximate range of Mg and acceptor concentrations. In some embodiments, the Mg and acceptor concentrations of p-type transition layer 24 may be outside of region 32. Transition layer 24 forms an Ohmic contact with metals, e.g. transparent or non-transparent contacts of Au, Ni, Al, Pt, Co, Ag, Ti, Pd, Rh, Ru, Re, and W, or alloys thereof. The p-type dopants for p-type transition layer 24 are selected from the Group II family which includes Be, Mg, Ca, Sr, Zn, and Cd. A preferred dopant is Mg, which may be co-doped with a Group VIA element, such as O, S, Se, and Te. In one example of the first embodiment, the thickness of p-type transition layer 24 ranges between about 10 and about 200 nm. As a consequence, the contribution of p-type transition layer 24 to the series resistance is negligible. FIG. 4B demonstrates the I-V characteristics for a Ni/Au metal p-type GaN contact in “back-to-back” (metal-semiconductor-semiconductor-metal) configuration for a Mg-doped GaN layer optimized for Ohmic contact formation (p-type transition layer according to the first embodiment). The forward current (I) exhibits a linear dependence on the voltage (V) indicating that the contact is Ohmic. FIG. 4A demonstrates the situation for a p-type conductivity layer. The I-V curve indicates the presence of a barrier to current flow. The p-type transition layer forms a contact with the metal layer that exhibits a barrier height <about 0.5 eV and almost Ohmic characteristics. If the contact is formed by depositing the metal directly on the p-type conductivity layer the barrier height is >about 1.0 eV. Utilization of contacts with such high barrier height would increase the forward voltage of the diodes and reduce their total power efficiency. In FIG. 5A, the barrier height is illustrated as a function of bulk resistivity of the transition material. Mg-doped GaN layers that have a low resistivity exhibit a high barrier height when combined with a metal layer to form a contact. As illustrated in FIG. 5A, a preferred embodiment of the p-type transition layer, that is, an embodiment with a barrier height less than about 0.5 eV, exhibits a bulk resistivity between about 7 Ω cm and about 250 Ω cm. Such p-type transition layers have the smallest impact on the driving voltage of the device. The driving voltage of such devices is less than or equal to about 3.5 volts. In other embodiments, the bulk resistivity may be greater than 250 Ω cm. The differences in barrier heights of the p-type transition and conductivity layer may be explained by differences in the out-diffusion of Mg, redistribution of hydrogen near the surface of the Mg-doped GaN films, different properties of the surface, or formation of magnesium nitride inclusions in the highly Mg-doped transition layer. The barrier height may be further lowered through contact annealing. FIG. 5B demonstrates the effect of contact annealing in a RTA system on the barrier height of contacts formed with p-type conductivity layers and contacts formed with p-type transition layers. The y-axis shows the barrier height, and the x-axis shows the temperature of a thermal anneal to activate the p-type dopant in either type of layer. FIG. 5B thus illustrates the effect of two different anneals, a thermal acceptor-activation anneal and a contact anneal, called “contact RTA” on FIG. 5B. Contact annealing reduces the barrier heights for both the transition layer and the p-type conductivity layer. For example, the barrier height for a p-type conductivity layer thermally annealed at 600� C. drops from about 2.7 eV before the contact anneal to about 2.3 eV after the contact anneal, and the barrier height for a p-type transition layer thermally annealed at 600� C. drops from about 0.8 eV before the contact anneal to about 0.4 eV after the contact anneal. However, even after contact annealing, contacts formed with p-type conductivity layers exhibit significantly higher barrier heights than contacts formed with p-type transition layers, e.g. about 2.3 eV for a p-type conductivity layer compared to about 0.4 eV for a p-type transition layer. Thus, though contact annealing does reduce the barrier height for a p-type conductivity layer contact, the effect is not enough to reduce the barrier height to that of a p-type transition layer contact. The results shown in FIG. 5B also show that the observed barrier height reductions are not strongly dependent on the temperature of the acceptor activation process, working equally well for activation at 600� C. and 850� C. The method to reduce the barrier height by contact annealing is described by Nakamura et al., Appl. Phys. Lett. 70, 1417 (1997) “Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours”. In a second embodiment, p-type transition layer 24 is not limited to Mg doped GaN, but is any III-V material. P-type transition layer 24 according to the second embodiment is homogeneously doped. P-type transition layer 24 according to the second embodiment may be, for example, InN, InGaN, AlInGaN, AlN, or AlGaN. When p-type transition layer 24 is InGaN, typically the group III compounds in the crystal are less than about 40% In, but the amount of In can range from 0-100% of the group III compound. When p-type transition layer 24 is AlGaN, typically the group III compounds in the crystal are less than about 20% Al, but the amount of Al can range from 0-100% of the group III compound. FIG. 6 illustrates the relationship between band gap and lattice parameter for compositions of aluminum, indium, gallium, and nitrogen. In FIG. 6, the squares represent the binary compounds AlN, GaN, and InN, the lines connecting the squares represent the ternary compounds AlGaN, AlInN, and InGaN with varying compositions of each group III material, and the shaded triangle between the lines represents the quaternary compound AlInGaN with varying compositions of each group III material. Line 60 represents an example lattice constant. The dots represent the composition of potential LED device layers. The injection layer refers to p-type conductivity layer 22. The simplest devices to fabricate have reasonably close lattice constants for each of the device layers. Thus, FIG. 6 illustrates that once the compositions of device layers have been selected, the composition of the p-type transition layer may be selected to lattice-match the p-type transition layer to the device layers, and to optimize the p-type transition layer for Ohmic contact. P-type transition layer 24 according to the second embodiment may also be any III-nitride arsenide compound, III-nitride phosphide compound, or III-nitride arsenide phosphide compound, such as GaNAs, GaNP, or GaNAsP. The addition of even a small amount of As or P can significantly lower the bandgap of III-nitride semiconductors. In the first and second embodiments of the invention, the p-type layers of the device are homogeneously doped. In the third and fourth embodiments, described below, at least one of the p-type layers of the device has a varying concentration of dopant. FIG. 7 illustrates a third embodiment of the invention where transition layer 24 (FIG. 2) is a doping superlattice. In many III-V semiconductors, a doping superlattice can achieve higher levels of doping than homogeneously doped layers. This is because in many III-V semiconductors, a heavily p-doped thick device layer exhibits poor surface quality. Accordingly, heavily doped layers and lightly doped or undoped layers are alternated in order to form a heavily doped structure with improved surface characteristics. In a first example of the third embodiment, transition layer 24 consists of sets 70 of alternating highly doped and lightly doped or undoped layers. Each set of layers 70 has a layer 71 of highly Mg-doped material on the bottom and a layer 72 of undoped or lightly Mg-doped material on the top. The designations “bottom” and “top” are arbitrary, such that either type of sublayer may be adjacent to both the p-type conductive layer and the metal layer. Sublayers 71 and 72 range in thickness from 1 nm to 20 nm. In one example of the third embodiment, each of sublayers 71 and 72 is about 10 nm thick and transition layer 24 includes 10 sets of sublayers such that transition layer 24 is 200 nm thick. Highly doped layer 71 has a Mg concentration ranging from about 1e20 cm−3 to about 5e21 cm−3. Lightly doped layer 72 has a Mg concentration ranging from undoped to about 1 e20 cm−3. In a second example of the third embodiment, rather than a heavily doped layer, layer 71 is a layer of elemental dopant. Thus, in this example, layer 72 may be Mg-doped or undoped GaN or AlInGaN and layer 71 may be elemental Mg. FIG. 8 illustrates a fourth embodiment of the invention. A p-type layer 28 separates active InGaN region 18 and metal layer 26B. P-type layer 28 is between 5 nm and 200 nm thick. P-type layer 28 is doped to provide for Ohmic contact formation with metal layer 26B and hole injection into active region 18. The composition and concentration are varied through layer 28. The variable doping in p-type layer 28 eliminates the need for a separate p-type conductivity layer. FIG. 9 illustrates one example of varying Mg content and four examples, labeled A-D, of varying composition in p-type layer 28, according to the fourth embodiment. Curve 82 illustrates one example of the Mg concentration in layer 28. The amount of Mg in layer 28 increases from about 1e19 cm−3 in the region adjacent to active region 18 to about 1e20 cm−3 in the region adjacent to metal layer 26B. The concentration of Mg in the region of layer 28 adjacent to active region 18 may vary from about 1e18 cm−3 to about 5e19 cm−3. The concentration of Mg in the region of layer 28 adjacent to metal layer 26B may vary from about 5e19 cm3 to about 1e21 cm−3. Curve 81 of example A illustrates a first example of varying composition where Al composition of layer 28 is varied. The amount of Al in layer 28 decreases from about 20% in the region adjacent to active region 18 to about 0% in the region adjacent to metal layer 26B. The presence of Al provides for efficient hole injection into the active layer, thus the Al composition is advantageously maximized in the region of layer 28 adjacent to active region 18. Curve 83 of example B illustrates an example where the In composition in layer 28 is varied. The amount of In increases from about zero percent in the region adjacent to active region 18 to about 40% in the region adjacent to metal layer 26B. The presence of In lowers the bandgap of the material and thereby provides for efficient Ohmic contact, thus the In composition is maximized near the metal contact. There may be no In present in the portion of the layer adjacent the active layer. In examples C and D, both the Al and the In compositions are varied. In example C, as the composition of Al is reduced, the Al is replaced with In. As illustrated in curve 84, the composition of Al is zero near metal contact 26B. Similarly, as illustrated in curve 85, the composition of In is zero near active region 18. Thus, layer 28 varies from AlGaN immediately adjacent to the active region, to AlInGaN in the region between the active region and the metal contact, to InGaN immediately adjacent to the metal contact. In example D, both Al and In are present in all areas of layer 28. As illustrated by curve 86, the Al composition is reduced from the active region to the metal contact, but never reaches zero composition. Similarly, as illustrated by curve 87, the In composition is reduced from the metal contact to the active region, but never reaches zero composition. Layer 28 is thus entirely AlInGaN, but varies from more Al than In near the active region to more In than Al near the metal contact. FIG. 9 illustrates just a few examples of the variation of composition and concentration in p-type layer 28 according to the fourth embodiment. In other examples, Al is present only in the half of p-type layer 28 adjacent to active region 18 and In is present only in the half of p-type layer 28 adjacent to metal contact 26B. In other examples, the composition of other group III or group V elements are varied. In still other examples, the concentration of a dopant other than Mg is varied. Further, As and P may be added to layer 28 to reduce the bandgap of layer 28, typically in the region of layer 28 that is adjacent to the contact. In order to form good contact, the lowest bandgap material is placed next to the metal contact. Since As and P reduce the bandgap of the material, As and P are added to the 1 to 2 nm of layer 28 adjacent to the contact in order to improve the characteristics of the contact. In devices which incorporate As or P into p-type layer 28, As or P may account for less than 3% of the of the group V materials. While particular embodiments of the present invention have been shown and described, it will be obvious to those skilled in the art that changes and modifications may be made without departing from this invention in its broader aspects and, therefore, the appended claims are to encompass within their scope all such changes and modifications as fall within the true spirit and scope of this invention. For example, while the layer is illustrated as having been grown by MOCVD, it may also be fabricated by the techniques of MBE, HVPE, as well as evaporation, sputtering, diffusing, or wafer bonding. Referenced byCiting PatentFiling datePublication dateApplicantTitleUS7485902 *Sep 17, 2003Feb 3, 2009Sanyo Electric Co., Ltd.Nitride-based semiconductor light-emitting deviceUS7910154 *Aug 17, 2006Mar 22, 2011Samsung Corning Precision Materials Co., Ltd.Nitride-based light emitting devices and methods of manufacturing the sameUS7964425 *Nov 24, 2006Jun 21, 2011Theleds Co., Ltd.Method for manufacturing p type gallium nitride based deviceUS8237245 *Aug 27, 2010Aug 7, 2012Hitachi Cable, Ltd.Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor deviceUS8829545May 12, 2008Sep 9, 2014Sumitomo Electric Industries, Ltd.Group III nitride semiconductor light-emitting deviceUS8906159 *Jun 4, 2008Dec 9, 2014Seoul Viosys Co., Ltd.(Al, Ga, In)N-based compound semiconductor and method of fabricating the sameUS20110198610 *Aug 27, 2010Aug 18, 2011Hitachi Cable, Ltd.Nitride semiconductor crystal, manufacturing method of the nitride semiconductor freestanding substrate and nitride semiconductor deviceEP1772909A2 *Feb 2, 2006Apr 11, 2007Seoul Opto-Device Co., Ltd.(AI,Ga,In)N-Based compound semiconductor and method of fabricating the sameEP2053668A2 *May 7, 2008Apr 29, 2009SUMITOMO ELECTRIC INDUSTRIES LtdGroup III nitride semiconductor light-emitting deviceWO2015005997A1 *Jun 5, 2014Jan 15, 2015Xi YangangLight emitting device and method for making the same* Cited by examinerClassifications U.S. Classification257/103, 438/22International ClassificationH01S5/30, H01S5/323, H01S5/042, H01L33/40, H01L33/32Cooperative ClassificationH01L33/32, H01S5/0425, H01S5/32341, H01S5/0421, H01L33/40, H01L2924/0002European ClassificationH01L33/40, H01L33/32Legal EventsDateCodeEventDescriptionSep 12, 2011FPAYFee paymentYear of fee payment: 4RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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Hop-hopping brings together some of these photographs, comprising a volume that is an artwork itself. Images from all periods and genres that, nevertheless, have something in common: In all of them there are feet that have lost - or are just about to loose - contact with the ground. In all of them there are people raising a leg or jumping in the air or balancing or on top of something. All of them feature someone - or something - that seems to be ready to take off. Read More
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Top 10 Hotels in Megalong Valley, New South Wales | Hotels.comEnglish (United States)Book online or call 800-246-8357This call is free. 24 hours a day; 7 days a week.HotelsHotel DealsPackages & FlightsGroupsGift CardsHelpWebsite feedbackSign in & AccountSign inCreate an accountYour bookingsReview a hotelHotels.com® RewardsYour bookingsHotelsHotels in AustraliaHotels in New South WalesMegalong Valley HotelsHotels in Megalong Valley, New South WalesSearch & Compare Megalong Valley HotelsCity, landmark, hotel name, address or zip codeCheck inCheck out I don’t know my datesRooms123456789+Room 1:Adults12345678Aged 18+Children01230-17Age at check in:Child 1:-?-<11234567891011121314151617Show dealsGet Secret Prices on select hotelsThese prices aren’t available to everyone.Unlock nowTrending now in Megalong ValleyHotels in Megalong ValleyMost bookedThe Hydro Majestic HotelGood 3.8 / 5( 63 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 98 people looked at this hotel in the last hourMost recent review"Room delightfully decorated, comfortable immaculately clean staff very friendly and helpful. Renovations and history wonderful and unique experience "B, Oct 2016, AUSky Rider Motor InnGood 3.9 / 5( 149 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 23 people looked at this hotel in the last hourMost recent review"The Motor Inn was a little out of town centre but was a pleasant walk to town nonetheless. The mattress sunk a bit when we first laid down on it but was comfortable enough. The exhaust fan was extremely noisy in the bathroom and needs a seperate switch from the light switch. Everything else was e..."A Traveller, Oct 2016, AUComfort Inn Redleaf ResortExcellent 4.0 / 5( 45 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 18 people looked at this hotel in the last hourMost recent review"When we got to our room the windows where open with a loverly breeze coming in"c, Oct 2016, AUChalet Blue MountainsOutstanding 4.7 / 5( 27 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 16 people looked at this hotel in the last hourMost recent review"The Chalet has an old world charm with some modern art influences. We stayed in a comfortable twin share room with own amenities A tasty dinner in the charming Restaurant which had a cosy fireplace & a variety of art work & collectibles. A lovely continental Breakfast was included. Nice ground..."A Traveller, Oct 2016, AUCrimson VillaOutstanding 4.8 / 5( 10 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 12 people looked at this hotel in the last hourMost recent review"We spent a few nights at Crimson Villa and were impressed from the beginning. Lots of space, in a beautiful garden, and a friendly welcome. It was a close drive to town and Katoomba attractions. We feel that we got a great value. The kids enjoyed the movies and board games. We also enjoyed having..."A Traveller, Feb 2016, USArcadia CottageOutstanding 5.0 / 5( 1 genuine review )Hotels.com® RewardsFor every 10 nights, get 1 free! 8 people looked at this hotel in the last hourMost recent review"Warm, cosy and comfortable. The gas fire in the lounge room was delightful. The bedrooms beautifully set up. A real winner!"A Traveller, Aug 2016, AUHotels within 10 miles of Megalong ValleyBest Western Alpine Motor InnExcellent 4.0 / 5( 168 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 86 people looked at this hotel in the last hourMost recent review"Enjoyed my meal and serviceat the hotel restaurant."A Traveller, Oct 2016, AULeisure Inn SpiresExcellent 4.0 / 5( 104 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 18 people looked at this hotel in the last hourMost recent review"Very handy, spacious and well appointed. Close to everything. "A Traveller, Sep 2016, AU3 Sisters MotelGood 3.7 / 5( 95 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 17 people looked at this hotel in the last hourMost recent review"Quiet location with parking just at the door. Room size was just right. Nice, clean and cosy. Plenty of hot water. Just a short drive to the town centre and restaurants. Lots of places to visit around Katoomba. Only had issues with the leaking bathroom sink tap. Overall, we enjoyed our stay."A Traveller, Oct 2016, USKatoomba Town Centre MotelExcellent 4.1 / 5( 96 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 11 people looked at this hotel in the last hourMost recent review"My husband and I were really impressed with the hotel. We booked a spa suite and were greeted with a complementary bottle of wine, which was a lovely touch. Nice soft, fluffy towels. The room was large. The staff were very friendly and helpful with the internet connection. The location is so conv..."B, Oct 2016, AUSee more hotels in Megalong Valley, New South WalesPay now or later on most roomsFree cancellation on most roomsPrice GuaranteeMap of Megalong Valley hotelsBest hotels in Megalong ValleyWith 10 hotels in Megalong Valley, there are several way you can use Hotels.com to find the perfect room.
If you are looking for Megalong Valley hotels in a particular area, you can use the search feature at the top of the page to search by neighborhood, landmark, address or zip code, or you can search by using the built-in map feature. You can also browse hotels in Megalong Valley by type, amenities, and star-rating so that you can find the best hotel. Currently, top rated hotels in Megalong Valley are:
Arcadia Cottage Crimson Villa Chalet Blue Mountains The Carrington Hotel Katoomba Town Centre Motel The location of your Megalong Valley hotel is important. If you are traveling to Megalong Valley, &StateorCountry for business, you may want to consider getting a hotel close to the airport or near your meeting venue. By doing so, you can really cut down on transportation costs and time. You may also want to book a hotel that offers free wifi just in case you need to get some work done.
You’ll also want to determine which type of accommodations will suit your needs before booking a hotel in Megalong Valley. If you’re traveling with the kiddos, a family friendly hotel will offer larger rooms and more sleeping arrangements. For those traveling for an extended period of time, booking a hotel suite with a kitchenette is a smart move and will feel a little more like home. If you are budget conscience and just need a place to rest your head, a hostel or motel may be all you need.
If you are looking to score the best discounts and deals, use the filter to sort by price from low to high. You can book a hotel in Megalong Valley for as low as &PricesFrom per night. If you are looking to cut down on expenses, look for hotels that include free breakfast and parking. Some hotels even offer free shuttle service to and from nearby places. You can also sort by star rating, proximity, and guest rating.
Before you book, check out user reviews. Hotels.com has 0 reviews in Megalong Valley. We show reviews from Expedia and TripAdvisor so you know that you are reading genuine, reliable reviews. Be sure to download the Hotels.com app so you can book your reservations on the go, view amenities, and save the hotels you want to view and compare later.See more hotels in Megalong Valley, New South WalesChoose one of the following to unlock Secret Prices and pay less on select hotels.EmailSign up for our latest offersHotels.com appDownload the app and book on the goHotels.com® RewardsJoin now to collect 10 nights, get 1 free*Top DestinationsHotels in New York, New YorkHotels in Las Vegas, NevadaHotels in Chicago, IllinoisHotels in San Francisco, CaliforniaHotels in Washington, District of ColumbiaHotels in Boston, MassachusettsHotels in San Diego, CaliforniaHotels in Orlando, FloridaHotels in London, United KingdomHotels in New Orleans, LouisianaHotels in Los Angeles, CaliforniaHotels in San Antonio, TexasHotels in Paris, FranceHotels in Seattle, WashingtonHotels in Atlanta, GeorgiaHotels in Philadelphia, PennsylvaniaHotels in Austin, TexasHotels in Atlantic City, New JerseyHotels in Rome, ItalyHotels in Myrtle Beach, South CarolinaHotels in Dallas, TexasHotels in Houston, TexasHotels in Denver, ColoradoHotels in Miami, FloridaCustomer ServiceYour bookingsFAQsContact usWebsite feedbackReview a hotelFor Suppliers, Affiliates and the MediaAdd HotelAffiliate with usPrivate LabelPromote with UsTravel AgentsPress OfficeUser Terms and Privacy PolicyTerms & ConditionsPrivacy PolicyCookie PolicyAbout our adsAbout UsJobsTravel GuidesTop 50 CitiesAll countriesAll hotelsSite index© 2016 Hotels.com, L.P. All rights reserved.Hotels.com and the Hotels.com logo are trademarks or registered trademarks of Hotels.com, LP in the U.S. and/or other countries. All other trademarks are property of their respective owners.* Learn more about Hotels.com® RewardsABOUT SSL CERTIFICATES

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text: Loading...MIAMI, FL - MAY 29: Pitcher Roberto Hernandez #40 of the Tampa Bay Rays throws against the Miami Marlins during the first inning at Marlins Park on May 29, 2013 in Miami, Florida. (Photo by Marc Serota/Getty Images)Back to galleryPhoto 5 of 20Previous | Next

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text: Patent US7942732 - Wagering game and method having a simultaneous multi-play feature - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsWagering games, gaming machines, networked gaming systems and associated methods are disclosed that include a simultaneous multi-play feature. One disclosed aspect provides for multiple sets of reels which spin simultaneously, each reel set corresponding to a particular objective. Another disclosed aspect...http://www.google.com/patents/US7942732?utm_source=gb-gplus-sharePatent US7942732 - Wagering game and method having a simultaneous multi-play featureAdvanced Patent SearchPublication numberUS7942732 B2Publication typeGrantApplication numberUS 11/935,337Publication dateMay 17, 2011Priority dateNov 10, 2006Fee statusPaidAlso published asUS20080113752Publication number11935337, 935337, US 7942732 B2, US 7942732B2, US-B2-7942732, US7942732 B2, US7942732B2InventorsLoren T. NelsonOriginal AssigneeBally Gaming, Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (24), Classifications (13), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetWagering game and method having a simultaneous multi-play feature


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He lost his Christmas spirit : awwjump to contentmy subredditsannouncementsArtAskRedditaskscienceawwblogbookscreepydataisbeautifulDIYDocumentariesEarthPornexplainlikeimfivefoodfunnyFuturologygadgetsgamingGetMotivatedgifshistoryIAmAInternetIsBeautifulJokesLifeProTipslistentothismildlyinterestingmoviesMusicnewsnosleepnottheonionOldSchoolCoolpersonalfinancephilosophyphotoshopbattlespicsscienceShowerthoughtsspacesportstelevisiontifutodayilearnedTwoXChromosomesUpliftingNewsvideosworldnewsWritingPromptsedit subscriptionsfront-all-random | AskReddit-funny-pics-worldnews-todayilearned-videos-gaming-gifs-movies-aww-news-IAmA-Jokes-mildlyinteresting-Showerthoughts-television-nottheonion-OldSchoolCool-tifu-LifeProTips-announcements-space-Futurology-explainlikeimfive-personalfinance-science-TwoXChromosomes-food-EarthPorn-gadgets-Music-photoshopbattles-DIY-dataisbeautiful-Documentaries-Art-WritingPrompts-nosleep-GetMotivated-creepy-UpliftingNews-sports-askscience-books-history-listentothis-philosophy-InternetIsBeautiful-blogmore » awwcommentsWant to join? Log in or sign up in seconds.|Englishlimit my search to /r/awwuse the following search parameters to narrow your results:subreddit:subredditfind submissions in "subreddit"author:usernamefind submissions by "username"site:example.comfind submissions from "example.com"url:textsearch for "text" in urlselftext:textsearch for "text" in self post contentsself:yes (or self:no)include (or exclude) self postsnsfw:yes (or nsfw:no)include (or exclude) results marked as NSFWe.g. subreddit:aww site:imgur.com dogsee the search faq for details.advanced search: by author, subreddit...this post was submitted on 22 Dec 20121 point (67% upvoted)shortlink: remember mereset passwordloginSubmit a new linkawwunsubscribesubscribe12,605,919 readers5,261 users here nowWelcome to /r/aww!
a community for 8 yearsmessage the moderatorsMODERATORScarelessmoomookittyMrsRattPenguinTransport316nutsabsurdlyobfuscatedParakeetNippleMotha_Effin_Kitty_YoKRaidiumearthceltic...and 9 more »discussions in /r/aww<>X19.3k points · 204 comments Like father like son3367 points · 121 comments Every time I take a bath. Never any privacy.39.3k points · 846 comments "Just gonna sit on you real quick"5383 points · 80 comments YIKES! Snowballs are cold1007 points · 30 comments Bush dog9925 points · 105 comments Lets see how you like the same806 points · 16 comments Say hello to the newest family member, Petey!4054 points · 46 comments Puppy tries to get his bed back... Cat does not care.2522 points · 37 comments This is Daniel and he's an aspiring guide dog!30.7k points · 415 comments Mom, STOP!This is an archived post. You won't be able to vote or comment.
012He lost his Christmas spirit (imgur.com)submitted 3 years ago by olerris1 commentshareloading...all 1 commentssorted by: besttopnewcontroversialoldrandomq&alive (beta)there doesn't seem to be anything herePosts are automatically archived after 6 months.Got Itaboutblogaboutsource codeadvertisejobshelpsite rulesFAQwikireddiquettetransparencycontact usapps & toolsReddit for iPhoneReddit for Androidmobile websitebuttons<3reddit goldredditgiftsUse of this site constitutes acceptance of our User Agreement and Privacy Policy (updated). © 2016 reddit inc. All rights reserved.REDDIT and the ALIEN Logo are registered trademarks of reddit inc.Advertise - lifestylescreate a new accountusername:password:verify password:email: (optional)remember meget the best of reddit emailed to you once a week. learn moresign uplog inusername:password:remember mereset passwordlog inBy signing up, you agree to our Terms and that you have read our Privacy Policy and Content Policy.English [en]Afrikaans [af] (*)العربية [ar] (*)Беларуская мова [be] (*)български език [bg]বাংলা [bn-IN] (*)বাংলা [bn-bd] (*)Bosanski [bs]català [ca]česky [cs]Cymraeg [cy] (*)dansk [da]Deutsch [de]Ελληνικά [el]English (Australia) [en-au]English (Canadian) [en-ca]English (Great Britain) [en-gb]English [en-us]Esperanto [eo] (*)español [es]español [es-ar]Español [es-mx]eesti keel [et] (*)Euskara [eu]فارسی [fa]suomi [fi]Filipino [fil] (*)français [fr]Français [fr-ca]Frysk [fy-NL] (*)Gaeilge [ga-ie] (*)Gàidhlig [gd]Galego [gl] (*)עברית [he] (*)मानक हिन्दी [hi] (*)hrvatski [hr]Magyar [hu]Հայերեն լեզու [hy]Bahasa Indonesia [id] (*)íslenska [is]italiano (Italy) [it]日本語 [ja]ಕನ್ನಡ [kn_IN]한국어 [ko]Latin [la] (*)1337 [leet]LOL [lol]lietuvių kalba [lt] (*)latviešu valoda [lv]Bahasa Melayu [ms] (*)Malti [mt-MT]Nederlands [nl]Nynorsk [nn]Norsk [no]Arrrrrrrr! [pir]polski [pl]português [pt] (*)português [pt-pt]português brasileiro [pt_BR]română [ro]русский [ru]slovenčina [sk]slovenščina [sl] (*)српски језик [sr]Srpski [sr-la]Svenska [sv]தமிழ் [ta]ภาษาไทย [th]Türkçe [tr]українська мова [uk]Tiếng Việt [vi]中文 [zh]简化字 [zh-cn] (*) incomplete volunteer to translateπ Rendered by PID 26506 on app-398 at 2016-12-08 05:26:28.390133+00:00 running 10ae0db country code: US.

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Integrated Medical Systems $50,000 Jobs, Employment in Tukwila, WA
Integrated Medical Systems $50,000 jobs in Tukwila, WA
Rehabilitation Unit medical leadership during... Mason Medical Center (VMMC) is a private, non-profit organization offering a system of integrated health... Sponsored by Virginia Mason - 30+ days ago
Medical Director Pediatrics Quality (PS)
with MultiCare Health System are recognized as being... In addition, the fully integrated inpatient and outpatient electronic medical record provides you access... Sponsored by MultiCare - 1 day ago
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to and benefit from integrated missions and programs... Contractor performance, estimated costs, pricing systems, financial policies, and cost control procedures... $61,867 - $80,427 a year
MegaPath’s Hosted and Integrated Voice Solutions. The... 6. Technically savvy working in various CRM/BPM systems, and experienced with Microsoft Office Suite. 7... Easily apply
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View all NetVersant Global Engineering jobs in Renton, WA - Renton jobs
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with MultiCare Health System are recognized as being... In addition, the fully integrated inpatient and outpatient electronic medical record provides you access... MultiCare Health System - 13 days ago
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Blues Place Gomez on Unconditional Waivers - St. Louis - Scout
Blues Place Gomez on Unconditional WaiversNate Latsch12/31/2015The St. Louis Blues are parting ways with veteran forward Scott Gomez.The St. Louis Blues announced Wednesday they have placed veteran forward Scott Gomez on unconditional waivers with the intent of granting him his unconditional release.
Gomez, 36, signed a one-year deal with St. Louis after coming to training camp on a professional tryout. He had appeared in 21 games for the Blues (23-12-4, 50 points) but had played in just five of the team’s 15 games so far this month. He recorded eight points (one goal, seven assists) and a -4 rating while averaging 11:15 minutes of ice time. For his career, Gomez has 755 points (181 goals, 574 assists) and 653 penalty minutes in 1,066 regular-season games with the New Jersey Devils, Montreal Canadiens, San Jose Sharks, Florida Panthers and Blues. You can follow Nate Latsch on Twitter at @NateLatsch or email him at natelatsch@gmail.com Share on Facebook Share on TwitterTrending on ScoutLongest Serving Weapons 50-Cal, B-52 & U2Ole Miss Recruits and Players ReactionCastleton shines in JulyHugh Freeze resigns at Ole MissAuthority Report: July Recruiting UpdateBlues Illustrated Top StoriesLoad More

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In ‘An Iliad,’ the epic glory and terror of war - The Washington Post
In ‘An Iliad,’ the epic glory and terror of war
Esther Williamson as the Poet in “An Iliad” by Taffety Punk Theatre Company. (Teresa Castracane)
Esther Williamson channels men, women, gods and even a rock formation in Taffety Punk Theatre Company’s “An Iliad.” But it’s her evocation of disparate attitudes that gives this one-person epic its power and bite. In the role of the Poet, a veteran chronicler of the Trojan War, Williamson sometimes radiates delight in military glory — the kind of enthusiasm that might have inspired a ticker-tape parade for Achilles.
But more often during this absorbing 95-minute production, directed by Dan Crane, the Poet seems aptly uneasy about the act of commemorating war. She is ruefully aware of suffering — and of history. In one of the play’s most memorable sequences, she becomes disoriented while describing a long-ago battlefield atrocity. Dazedly, she begins reciting a centuries spanning, roughly chronological list of armed conflicts, including the Peloponnesian War, various Crusades and the Iran-Iraq war. Finally, she huddles on the floor, repeating the word “Syria” again and again.
A vigorous stage presence, Williamson ably draws out the resonance of “An Iliad,” written by Lisa Peterson and Denis O’Hare and based on Homer’s “The Iliad” as translated by Robert Fagles. (“An Iliad” was first produced in Seattle in 2010. Subsequent productions have included Studio Theatre’s version a few years ago.) She creates a persuasively modern, ambivalent, self-aware Poet — a figure who sometimes exults in the grandeur of epic but more frequently feels burdened by the responsibility of bearing witness to violence.
The Poet’s struggle as a storyteller comes through all the more clearly because of the spareness of this intimate production at Capitol Hill Arts Workshop. The audience sits on two sides of the stage area, which is bare except for glass bottles that seem to be filled with either sand or water. Chalked lines of Greek lettering spider across one wall. Behind the audience, on one side, a musician from the band Hand Grenade Job (Erin McCarley and Beck Levy alternate) supplies frugal, moody sounds.
In the show’s opening moments, the Poet opens a bottle and scatters sand across the floor — a stand-in for the beach outside Troy. Dressed in a long skirt, a sleeveless top and boots, she launches into her epic, pausing now and then for digressions, such as wry speculation (with an arch smile) that, when modern times arrived, the Greek gods took up residence in gin, vodka and tequila.
Sometimes, movement contributes to storytelling. At one point, for instance, the Poet leans forward and back to suggest waves on a beach. Moments later, she mimes the act of rowing while describing the regional affiliation of Greek units landing near Troy: Suddenly, Greek place names cede to American place names, driving home the point that war is a phenomenon known to all countries and times.
A veteran of all-female productions by the Riot Grrrls, an arm of Taffety Punk, Williamson nimbly conjures up male “Iliad” figures such as the sulky Achilles and the irritating Paris. Still, whether or not for reasons related to the performer’s gender, I found myself particularly conscious of the story’s references to, or depictions of, female characters who are sidelined (e.g. Andromache) or exploited (e.g., the girl who becomes Agamemnon’s war prize) by men. The weary, troubled Poet might be the first to acknowledge that war tends to be a macho endeavor.
“An Iliad,” by Lisa Peterson and Denis O’Hare. Based on Homer’s “The Iliad,” translated by Robert Fagles. Directed by Dan Crane; light design, Paul Callahan; set, costume and prop design, Crista Noel Smith; movement, Dody DiSanto. 95 minutes. Tickets: $15. Through Oct. 22 at Capitol Hill Arts Workshop, 545 Seventh St. SE. Visit taffetypunk.com or call 800-838-3006.

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