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Allelic polymorphism of T-cell receptor constant domains is widespr... - PubMed - NCBI
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See comment in PubMed Commons belowImmunogenetics. 2004 Mar;55(12):818-24. Epub 2004 Feb 19.Allelic polymorphism of T-cell receptor constant domains is widespread in fishes.Criscitiello MF1, Wermenstam NE, Pilström L, McKinney EC.Author information1Department of Microbiology and Immunology, University of Miami School of Medicine, PO Box 016960, Miami, FL 33101, USA.AbstractT-cell receptor chains contain membrane-proximal constant domains of the immunoglobulin superfamily that are relatively invariant in mammalian species. In contrast, recent studies in the bicolor damselfish have demonstrated surprising allelic polymorphism in the TCR alpha ( A) and TCR beta ( B) "constant" (C) domain genes. This report extends these initial observations beyond Perciformes to two other orders of teleost fishes. Studies in both the Atlantic cod and zebrafish show high levels of polymorphism in the TCRA constant genes. Levels of 13% and 15% amino acid nonidentity were found within cod and zebrafish, respectively. Evolutionary analysis of codon usage suggests that positive selection maintains the high number of TCRAC alleles in these fish populations. Additionally, investigation of a TCRB constant gene from the Beau Gregory, a sister species of the bicolor damselfish, shows no evidence of transpecies maintenance of constant region alleles. These data argue that the T-cell receptor constant domain is being employed by many vertebrates in a manner inconsistent with our current understanding, and may indicate unheralded complexity in signal transduction through the TCR/CD3 complex.PMID: 14985877 [PubMed - indexed for MEDLINE] SharePublication Types, MeSH Terms, Substances, Secondary Source ID, Grant SupportPublication TypesComparative StudyResearch Support, Non-U.S. Gov'tResearch Support, U.S. Gov't, Non-P.H.S.Research Support, U.S. Gov't, P.H.S.MeSH TermsAllelesAmino Acid SequenceAnimalsCod Liver OilCodon/geneticsDNA, Complementary/genetics*Erythrocytes/immunologyErythrocytes/metabolismEvolution, MolecularKidney/immunologyKidney/metabolismMolecular Sequence DataPhylogenyPolymerase Chain ReactionPolymorphism, Genetic*Receptors, Antigen, T-Cell, alpha-beta/genetics*Selection, GeneticSequence Homology, Amino AcidSpleen/immunologySpleen/metabolismZebrafish/genetics*SubstancesCodonDNA, ComplementaryReceptors, Antigen, T-Cell, alpha-betaCod Liver OilSecondary Source IDGENBANK/AJ439464GENBANK/AJ439465GENBANK/AJ439466GENBANK/AJ439467GENBANK/AJ439468GENBANK/AJ439469GENBANK/AJ439470GENBANK/AJ439471GENBANK/AJ439472GENBANK/AJ439473GENBANK/AJ439474GENBANK/AJ439475GENBANK/AJ439476GENBANK/AJ439477GENBANK/AJ439478GENBANK/AJ439479GENBANK/AJ439480GENBANK/AJ439481GENBANK/AJ439482GENBANK/AJ439483GENBANK/AJ439484GENBANK/AJ439485GENBANK/AJ439486GENBANK/AJ439487GENBANK/AJ439488GENBANK/AJ439489GENBANK/AJ439490GENBANK/AJ439491GENBANK/AJ439492GENBANK/AJ439493GENBANK/AJ439494GENBANK/AJ439495GENBANK/AJ439496GENBANK/AJ439497GENBANK/AJ439498GENBANK/AJ439499GENBANK/AY476721GENBANK/AY476722GENBANK/AY476723GENBANK/AY476724GENBANK/AY476725GENBANK/AY476726GENBANK/AY476727GENBANK/AY476728GENBANK/AY476729GENBANK/AY476730GENBANK/AY476731GENBANK/AY476732GENBANK/AY476733GENBANK/AY476734Grant SupportNS36998/NS/NINDS NIH HHS/United StatesP30 ES05705/ES/NIEHS NIH HHS/United StatesLinkOut - more resourcesFull Text SourcesSpringerEBSCOGale DatabasesIngenta plcProQuestOther Literature SourcesAccess more work from the authors - ResearchGatePubMed Commons home

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Patent US6780652 - Self-aligned MRAM contact and method of fabrication - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsA method of forming self-aligned MRAM contacts is disclosed. MRAM stacks including an upper layer of a conductive material are formed over portions of integrated circuitry. An insulating material is formed over the substrate, including the MRAM stacks with the upper layer of conductive material. The...http://www.google.com/patents/US6780652?utm_source=gb-gplus-sharePatent US6780652 - Self-aligned MRAM contact and method of fabricationAdvanced Patent SearchPublication numberUS6780652 B2Publication typeGrantApplication numberUS 09/805,914Publication dateAug 24, 2004Filing dateMar 15, 2001Priority dateMar 15, 2001Fee statusPaidAlso published asUS20020132464, US20020182755Publication number09805914, 805914, US 6780652 B2, US 6780652B2, US-B2-6780652, US6780652 B2, US6780652B2InventorsRoger LeeOriginal AssigneeMicron Technology, Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (12), Non-Patent Citations (1), Referenced by (11), Classifications (10), Legal Events (3) External Links: USPTO, USPTO Assignment, EspacenetSelf-aligned MRAM contact and method of fabrication
US 6780652 B2Abstract
A method of forming self-aligned MRAM contacts is disclosed. MRAM stacks including an upper layer of a conductive material are formed over portions of integrated circuitry. An insulating material is formed over the substrate, including the MRAM stacks with the upper layer of conductive material. The insulating material is subsequently chemically mechanically polished or etched, stopping on the upper layer of conductive material, to expose portions of the conductive material which are used as self-aligned MRAM contacts.
The present invention relates MRAM semiconductor structures and, more particularly, to a method of forming self-aligned contacts in MRAM structures.
The present invention provides a method for forming self-aligned MRAM contacts for MRAM structures, such as magnetic layers of an MRAM stack, formed over various underlayers of an integrated circuit substrate. In an exemplary embodiment of the invention, MRAM stacks are formed to include a top layer of a conductive material, such as tungsten nitrogen. An insulating material is formed over the whole substrate including the MRAM stacks. The insulating material is subsequently chemically mechanically polished (CMP) to expose the upper surface of such conductive material and to form a self-aligned MRAM contact on a respective MRAM stack. Subsequent word lines and conductive plugs are formed over the self-aligned MRAM contacts.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5659499 *Nov 24, 1995Aug 19, 1997MotorolaMagnetic memory and method thereforUS5841692Jul 16, 1997Nov 24, 1998International Business Machines CorporationMagnetic tunnel junction device with antiferromagnetically coupled pinned layerUS5940319 *Aug 31, 1998Aug 17, 1999Motorola, Inc.For controlling operations of the magnetic memory cellUS6153443 *Dec 21, 1998Nov 28, 2000Motorola, Inc.Method of fabricating a magnetic random access memoryUS6269018 *Apr 13, 2000Jul 31, 2001International Business Machines CorporationMagnetic random access memory using current through MTJ write mechanismUS6358756 *Feb 7, 2001Mar 19, 2002Micron Technology, Inc.Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment schemeUS6368878 *Mar 21, 2000Apr 9, 2002International Business Machines CorporationIntentional asymmetry imposed during fabrication and/or access of magnetic tunnel junction devicesUS6413788 *Feb 28, 2001Jul 2, 2002Micron Technology, Inc.Keepers for MRAM electrodesUS6555858 *Nov 15, 2000Apr 29, 2003Motorola, Inc.Self-aligned magnetic clad write line and its method of formationUS20010040778 *Feb 10, 1998Nov 15, 2001David William AbrahamLimiting magnetoresistive electrical interaction to a preferred portion of a magnetic region in magnetic devicesUS20020132473Mar 13, 2001Sep 19, 2002Applied Materials ,Inc.Integrated barrier layer structure for copper contact level metallizationEP1054449A2May 17, 2000Nov 22, 2000Motorola, Inc.Magnetic random access memory and fabricating method thereof* Cited by examinerNon-Patent CitationsReference1"Chemical-mechanical polishinig as an enabling technology for giant magnetoresistance devices", Y.Z. Hu et al., 1997 Elsevier Science SA, vol. 308-309, p. 555-561.Referenced byCiting PatentFiling datePublication dateApplicantTitleUS6984530 *Mar 29, 2004Jan 10, 2006Hewlett-Packard Development Company, L.P.Method of fabricating a MRAM deviceUS7015059 *Oct 27, 2004Mar 21, 2006Renesas Technology Corp.Thin film magnetic memory device and manufacturing method thereforUS7119388 *Nov 26, 2003Oct 10, 2006Micron Technology, Inc.MRAM device fabricated using chemical mechanical polishingUS7122385 *Mar 25, 2005Oct 17, 2006Kabushiki Kaisha ToshibaMagnetic memory device having magnetic circuit and method of manufacture thereofUS7285811Aug 31, 2006Oct 23, 2007Micron Technology, Inc.MRAM device for preventing electrical shorts during fabricationUS8021897 *Feb 19, 2009Sep 20, 2011Micron Technology, Inc.Methods of fabricating a cross point memory arrayUS8105867 *May 19, 2009Jan 31, 2012Sandisk 3D LlcSelf-aligned three-dimensional non-volatile memory fabricationUS8207557Aug 19, 2011Jun 26, 2012Micron Technology, Inc.Cross-point memory structuresUS8530939May 31, 2012Sep 10, 2013Micron Technology, Inc.Cross-point memory structuresUS8802451 *Sep 11, 2012Aug 12, 2014Avalanche Technology Inc.Method for manufacturing high density non-volatile magnetic memoryUS20130244344 *Sep 11, 2012Sep 19, 2013Roger Klas MalmhallMethod for manufacturing high density non-volatile magnetic memory* Cited by examinerClassifications U.S. Classification438/3, 257/E21.665, 257/E27.005, 438/238International ClassificationH01L27/22, H01L21/8246Cooperative ClassificationH01L27/222, B82Y10/00European ClassificationB82Y10/00, H01L27/22MLegal EventsDateCodeEventDescriptionSep 21, 2011FPAYFee paymentYear of fee payment: 8Feb 1, 2008FPAYFee paymentYear of fee payment: 4Mar 15, 2001ASAssignmentOwner name: MICRON TECHNOLOGIES, INC., IDAHOFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LEE, ROGER;REEL/FRAME:011611/0864Effective date: 20010308Owner name: MICRON TECHNOLOGIES, INC. 8000 S. FEDERAL WAYBOISEFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LEE, ROGER /AR;REEL/FRAME:011611/0864RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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JFreeChart / Patches / #216 Ignore hidden series in axis range determination
#216 Ignore hidden series in axis range determination
Creator: Peter Kolb
The patch inludes the following:
-A flag ignoreHiddenSeriesInRange in XYPot to determine whether hidden series should be excluded when the value range for an XYDataset is calculated.
change to XYPlot.rendererChanged(RendererChangeEvent event): changes in series visibility trigger a RendererChangeEvent, but in order to initiate a recalculation of the value ranges, an AxisChangeEvent needs to be triggered as well. This is achieved by calling Axis.configure() on the range and domain axis that belong to the respective dataset.
-Change to AbstractXYItemRenderer.findDomainBounds(XYDataset set) and AbstractXYItemRenderer.findRangeBounds(XYDataset set). Instead of returning DatasetUtilities.find[Range|Domain]Bounds(XYDataset dataset, includeIntervals false)
DatasetUtilities.find[Range|Domain]Bounds(XYDataset dataset, includeIntervals false,XYItemRenderer renderer,boolean ignoreHiddenSeries). The flag ignoreHiddenSeries is retrieved via AbstractXYItemRenderer.getPlot().getIgnoreHiddenSeriesInRange()
-Addition to DatasetUtilities. New methods
public static Range find[Domain|Range]Bounds(XYDataset dataset, boolean includeInterval,XYItemRenderer renderer,boolean inoreHiddenSeries)
public static Range iterateXYRangeBounds(XYDataset dataset,XYItemRenderer renderer,boolean ignoreHiddenSeries)
public static Range iterateDomainBounds(XYDataset dataset, boolean includeInterval,XYItemRenderer renderer,boolean ignoreHiddenSeries)
that will ignore series marked as invisible in the renderer if desired.
Peter Kolb - 2008-05-18
ZIP archive with patch files for XYPlot, AbstractXYItemRenderer, and DatasetUtilities
hiddenseriespatch.zip
Henry Proudhon - 2008-05-24
this looks like a good idea and a sound implementation to me.
I'm not sure I've got all the understanding of the code to comment your patch but I personnaly use a similar approach to achieve the same result.
So in short I'd like to see this accepted :)
Perhaps the thing one might like to see is a more general approach than just limited to the XY thing.
Peter Kolb - 2008-07-06
user_id=1984073
New version patched against JFreeChart 1.0.10 and updated:
- The ignoreHiddenSeriesInRange flag and the corresponding getters/setters have been moved from XYPlot to Plot and can thus be used from CategoryPlot as well.
- Change to AbstractCategoryItemRenderer: findRangeBounds(CategoryDataset dataset) now returns DatasetUtilities.findRangeBounds(dataset, true, this, getPlot().getIgnoreHiddenSeriesInRange()). The behaviour of AbstractXYItemRenderer.findRange/DomainBounds(XYDataset dataset) has been changed. These methods now return DatasetUtilities.find[Range|Domain]Bounds(dataset,true,this,getPlot().getIgnoreHiddenSeriesInRange())i.e. intervals will be included.
- Several new methods for DatasetUtilities:
public static Range findRangeBounds(CategoryDataset dataset,boolean includeInterval,CategoryItemRenderer renderer,boolean ignoreHiddenSeries) that calls
public static Range iterateRangeBounds(CategoryDataset dataset,boolean includeInterval,CategoryItemRenderer renderer,boolean ignoreHiddenSeries). Hidden series are omitted from the calculation of the axis range dependent on the ignoreHiddenSeries flag.
Several other DatasetUtilities-methods concerning the range determination have been updated since treatment of Double.NaN values was sometimes missing.
BarRenderer has been patched. BarRenderer.findRangeBounds(CategoryDataset dataset) now calls super.findRangeBounds() instead of invoking a DatasetUtilities-method and thus profits from the hidden series treatment. The present behaviour of BarRenderer concerning hidden series (hidden series are only removed from the legend but the bars are still drawn) has been corrected as well.
File Added: HiddenSeriesPatch_incl_category.zip
File with updated patches for Abstract[XY/Category]ItemRenderer, BarRenderer,Plot,DatasetUtilities
HiddenSeriesPatch_incl_category.zip
David Gilbert - 2008-10-07

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Patent US5776127 - Two-pulse, lateral tissue illuminator - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign in<nobr>Advanced Patent Search</nobr>PatentsA two-pulse, lateral tissue illuminator in which a first pulse delivered by a first optical waveguide is used to irradiate a liquid-containing region to form a vapor bubble; a second pulse, delivered by a second optical waveguide, is then passed through the vapor bubble and used to incise a tissue of...http://www.google.com/patents/US5776127?utm_source=gb-gplus-sharePatent US5776127 - Two-pulse, lateral tissue illuminatorAdvanced Patent SearchPublication numberUS5776127 APublication typeGrantApplication numberUS 08/741,139Publication dateJul 7, 1998Filing dateOct 29, 1996Priority dateOct 13, 1994Fee statusLapsedAlso published asEP0785757A2, EP0785757A4, US5632739, WO1996028998A2, WO1996028998A3Publication number08741139, 741139, US 5776127 A, US 5776127A, US-A-5776127, US5776127 A, US5776127AInventorsRichard Rox Anderson, Joseph A. GrocelaOriginal AssigneeThe General Hospital CorporationExport CitationBiBTeX, EndNote, RefManPatent Citations (22), Referenced by (16), Classifications (11), Legal Events (6) External Links: USPTO, USPTO Assignment, EspacenetTwo-pulse, lateral tissue illuminatorUS 5776127 AAbstract A two-pulse, lateral tissue illuminator in which a first pulse delivered by a first optical waveguide is used to irradiate a liquid-containing region to form a vapor bubble; a second pulse, delivered by a second optical waveguide, is then passed through the vapor bubble and used to incise a tissue of a patient. The illuminating device can be used to effectively deliver radiation to tissue positioned laterally relative to the axis of the delivery fibers, and allows a reduction in the attenuation of the radiation by the surrounding liquid.
What is claimed is: 1. An apparatus for delivering optical radiation to a tissue of a patient, comprising:a first optical waveguide defining a first axis along a longitudinal dimension of said first optical waveguide, said first optical waveguide configured to deliver optical radiation to a liquid-containing region adjacent to the tissue along the first axis so as to form a vapor bubble in the liquid-containing region; a second optical waveguide configured to deliver optical radiation to the tissue through the vapor bubble; a light deflector arranged to redirect the optical radiation from said second optical waveguide but not from said first optical waveguide along a second axis divergent from said first axis, and a chamber having a longitudinal axis aligned substantially parallel with the first axis, said first and second optical waveguides being attached to said chamber. 2. The apparatus of claim 1, wherein said light deflector comprises an angled cleave on a distal tip of said second optical waveguide.
3. The apparatus of claim 2, wherein said distal tip is cleaved at an angle of about 45 degrees.
4. The apparatus of claim 1, wherein said light deflector comprises a partially reflective surface onto which said optical radiation exiting said second optical waveguide impinges.
5. The apparatus of claim 4, wherein a distal tip of said second optical waveguide is orthogonally cleaved and said partially reflective surface is oriented at an angle of between 30 and 60 degrees relative to said distal tip.
6. The apparatus of claim 5, wherein said angle is about 45 degrees.
7. The apparatus of claim 1, further comprising a single light source coupled to said first and second optical waveguides.
8. The apparatus of claim 7, wherein said light source emits infrared radiation.
9. The apparatus of claim 7, wherein said light source is selected from the group consisting of Nd:YAG, Nd:YLF, Nd:YAP, Nd:YALO, Ho:YSGG, Ho:YAG, Ho:YLF, CO2, infrared diode, and Ti:sapphire lasers.
10. The apparatus of claim 1, further comprising two separate light sources, one each being coupled separately to said first and second optical waveguides, respectively.
11. The apparatus of claim 10, wherein said first light source is configured to emit a wavelength which is strongly absorbed by the liquid-containing region, and said second light source is configured to emit a wavelength which is strongly absorbed by the tissue.
12. The apparatus of claim 11, wherein said first and second light sources emit infrared light.
13. The apparatus of claim 11, wherein said first light source emits infrared wavelengths, and said second light source emits visible wavelengths.
14. The apparatus of claim 1, configured to provide optical pulses of said optical radiation from said first and second optical waveguides having durations of between 100 and 1000 microseconds.
15. The apparatus of claim 1, wherein said first optical waveguide is attached to an outer surface of said chamber and said second optical waveguide is located within said chamber, said light deflector redirecting the optical radiation from said second optical waveguide out of said chamber.
16. The apparatus of claim 15, wherein said light deflector comprises a partially reflective surface on an inner wall of said chamber onto which said optical radiation exiting said second optical waveguide impinges.
17. The apparatus of claim 15, wherein said wall includes an opening through which said optical radiation passes.
18. The apparatus of claim 17, wherein a distal tip of said first optical waveguide is positioned above said opening.
This is a continuation of application Ser. No. 08/323,295, filed Oct. 13, 1994 now U.S. Pat. No. 5,632,739.
A second optical field (indicated in the figure by the arrows 20) is then delivered through a second waveguide 21 to a hollow chamber 22 included in the tissue illuminator 10. The wavelength of the second optical field is chosen so that it is strongly absorbed by the tissue sample 11 within the liquid region 12. The distal end of the second waveguide 21' is encased in the chamber 22, and may be cleaved at an angle to allow the second optical field to reflect at an orthoganal angle. After being internally reflected at the fiber/air interface, the optical field propagates out through an opening 24 of the chamber 22, and into the newly created vapor bubble region 18. Alternatively, the fiber may be cleaved orthogonal to its central axis, and an interior wall of the chamber 22 may be angled so as to laterally direct the light out of the chamber 22. The optical pathway of the second optical field is determined by the angle of the cleaved waveguide and the geometry of the interior walls of the tube; preferably, light emerges along a pathway roughly orthogonal to that of the first optical field. Propagation of the second optical field through the vapor bubble region 18 results in a dramatic reduction in attenuation relative to propagation of the same field through a continuous fluid region. This is primarily because the second optical field, chosen to be absorbed by the tissue sample (composed primarily of water), is also strongly absorbed by the surrounding fluid region. Absorption by the gaseous vapor bubble is relatively low, allowing a large fraction of the second optical field to be delivered to the tissue sample 11.
Referring now to FIG. 4, the time-dependent properties of the optical fields, i.e., the duration of and spacing between the first 46 and second 48 optical pulses, can be adjusted so as to maximize the amount of energy delivered to the tissue of interest. For example, the durations of the first 46 and second 48 optical pulses (indicated in the figure by arrows 50 and 52, respectively) can be adjusted so as to increase the amount of heat deposited in the liquid region, or in the tissue. In particular, the duration (i.e., power) of the first pulse 46 can be adjusted to vary the size, rate of expansion, and lifetime before collapse of the vapor bubble generated in the fluid region. Alternatively, the energy of the pulse can be adjusted to vary these properties. Preferably, for light at 2.1 microns, the time duration of the first pulse 46 is between about 1000 and 500 microseconds, and the pulse energy is between about 0.5 and 10 Joules/pulse. Typically, the collective size of the vapor bubbles produced with radiation of this magnitude is between about 0.5 and 6.0 mm , and the lifetime before collapse is about 100-400 microseconds.
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Calderon et Goethe ou Le Faust et le Magicien prodigieux *EBOOK* by Sanchez Moguel Antonio Magnabal Joseph Germain: - E-Books Delivery Service
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5mm Thickness Sound Muffler CAR Heat Shield Turbo Insulation MAT Wrap 1M X 300mm | eBay Skip to main contenteBayShop by categoryEnter your search keywordAll CategoriesAdvancedG'day (Sign in to bid or buy)eBay DealsSellHelp & ContactMy eBayExpand My eBayMy eBay SummaryBids/OffersWatch ListWish ListAll ListsPurchase HistorySelling/soldMy CollectionsFollowed searchesMy messagesNotification Back to home page
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5mm Thickness Sound Muffler Car Heat Shield Turbo Insulation Mat Wrap 1M x 300mm
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Various 3D Carbon Fiber4D Bubble Free Carbon Fiber*NEW* 5D Glossy Carbon FiberCar Various Vinyl FilmGraffiti Sticker BombCar Headlight Tint FilmHeat&Sound InsulationCar Window TintCar Window SoxCar HID Xenon Kit & PartsCar LED LightsCar Work Light BarCar Moulding TrimCar Rubber Seal ExtrusionsCar Antenna/AerialCar Mats/CarpetCar Brake Caliper Decal CoverCar/Motorcycle CoverCar Stainless Exhaust TipCar Cargo Net HolderCar Door Sill PlateCar Wiper BladesCar Mud FlapsCar AccessoriesBoat LED Light BarBoat Decorative TrimHK Stockfor Alfa Romeofor Audifor BMW

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Psycho by BLOCH, ROBERT: New York Simon & Schuster 1959 - James Pepper Rare Books, Inc., ABAA
Published by New York Simon & Schuster 1959, 1959
First Edition, First Printing. Usual slight tanning of pages, else fine in a very good bright dust jacket with a few small mends by an expert paper conservationist. The basis of the classic Alfred Hitchcock film. Bookseller Inventory # 7790J
Publisher: New York Simon & Schuster 1959


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Review of the Proposal for the Gulf Long-Term Follow-Up Study: Highlights from the September 2010 Workshop - PubMed - NCBI
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See comment in PubMed Commons belowReview of the Proposal for the Gulf Long-Term Follow-Up Study: Highlights from the September 2010 Workshop.EditorsInstitute of Medicine (US) Committee to Review the Federal Response to the Health Effects Associated with the Gulf of Mexico Oil Spill; Goldman L, Mitchell A, Patlak M, editors. SourceWashington (DC): National Academies Press (US); 2010. The National Academies Collection: Reports funded by National Institutes of Health.ExcerptAs part of its ongoing commitment to the U.S. Department of Health and Human Services (HHS) to provide periodic independent reviews of the federal response to the Gulf of Mexico oil spill as it relates to the surveillance and monitoring of acute and long-term physical and behavioral health effects, the Institute of Medicine (IOM) convened the Committee to Review the Federal Response to the Health Effects Associated with the Gulf of Mexico Oil Spill. As part of its work, the committee planned a workshop to bring together experts to review and make comments on the Gulf Long-Term Follow-Up Study for Oil Spill Clean-Up Workers and Volunteers (GuLF) study protocol, which was published on the IOM website just before the conference. This document highlights the presentations and discussions that occurred during the workshop, which was held on September 22, 2010, in Tampa, Florida.Copyright © 2010, National Academy of Sciences.SectionsThe National AcademiesCommittee to Review the Federal Response to the Health Effects Associated with the Gulf of Mexico Oil SpillReviewersIntroductionGuLF Study DesignTapping Existing ResourcesAdministrative and Data Oversight DetailsExposure Assessment ChallengesSelecting Appropriate ControlsPredicting OutcomesPlanning for Lower EnrollmentEngaging the Local CommunityEstablishing Referral NetworksPlanning for Legal IssuesAdditional Health Endpoints for StudyFinal RemarksAppendixPMID: 21210557 Free Books & DocumentsFree full textShareGrant supportGrant supportN01 OD042139/OD/NIH HHS/United StatesLinkOut - more resourcesFull Text SourcesNational Academies PressNCBI BookshelfPubMed Commons home
Full text linksReview of the Proposal for the Gulf Long-Term Follow-Up Study: Highlights from the September 2010 WorkshopFree full text You are here: NCBI > Literature > PubMed


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Ida May Gledhill Hillis (1872-1934) - Find A Grave Memorial
Ida May Gledhill Hillis
Death 13 Aug 1934
Plot Section AA Lot 23 Burial 5332
Memorial ID 63249397
Frank Thomas Hillis*
Norma I. Hillis Hayes*
Thelma Alberta Rogers*
Find A Grave Memorial 63249397
Find A Grave, database and images (https://www.findagrave.com : accessed ), memorial page for Ida May Gledhill Hillis (26 Jun 1872–13 Aug 1934), Find A Grave Memorial no. 63249397, citing Fairview Cemetery, Galion, Crawford County, Ohio, USA ; Maintained by Kathy Swartzfager Scott (contributor 47092236) .
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text: 11Loading multiple shared libraries with different versions11How to call a function from a shared library?2does dynamic library shared global variable in linux3readelf does not show shared libraries' version numbers2Problems using a shared library0Issues with linking to certain functions in my own shared library on Linux0trying to link to two shared libraries that resolve the same symbol in a way that if one lib is unreachable the other is used0Shared libraries versions and executables on Linux2Compile a c-program in Linux using shared library0Error while loading shared library : librun.so

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Letters: Jacob Lawrence’s Champion - The New York Times
Book Review|Letters: Jacob Lawrence’s Champion
Letters: Jacob Lawrence’s Champion
I was pleased to see Jay Leyda (1910-88) mentioned so positively in Isabel Wilkerson’s review of “Jacob Lawrence: The Migration Series,” by Leah Dickerman and Elsa Smithgall (June 28). Leyda was an exceptional polymath — not only a champion of Jacob Lawrence and of black history and art, but also a distinguished film historian and filmmaker (a protégé of Sergei Eisenstein), and a contributor to postwar American literary studies with books including the indispensable two-volume “Melville Log” (1951).
A comprehensive biography of this important cultural figure is long overdue. The resources are available in large collections of his papers at U.C.L.A. and the Tamiment Library at New York University, as well as in the Melville Society Archive in New Bedford, Mass., and in the papers of prominent Melvilleans like Henry A. Murray, Harrison Hayford and Merton M. Sealts. I hope that an ambitious and talented writer either already has or soon will take up this necessary project.
Of course, controlling by overparenting, as Heather Havrilesky’s review of “How to Raise an Adult,” by Julie Lythcott-Haims (June 21), points out, harms children by robbing them of autonomy. But the basic joy of seeing our children succeed and thrive is undeniable. Any parent who has watched a toddler take her first steps feels pride in the child’s success. The grades and tests in school and the phony brass ring of the college admissions system — added to the uncertain and changing economy — sharpen parental anxiety. That’s because evolution has hard-wired parents to thrill to our children’s growing competence. It has selected out genes that propel parents to nurture our children’s survival and success.
But let’s not single out the extremes and blame all parents for wanting successful kids. Parenting is hard enough without the constant barrage of criticism laid on them by the media.
In her review of “How to Raise an Adult,” Heather Havrilesky asks, “When did the central aim of parenting becoming preparing children for success?”
I would suggest that this happened sometime before Jane Austen published “Pride and Prejudice” in 1813. Perhaps Mrs. Bennet could be reinterpreted as the original helicopter parent. Until comparatively recently, when women’s choices of careers expanded dramatically, many mothers saw their job as preparing their daughters for a successful life of marriage and motherhood. The details have changed but the goal of parenthood, not so much.
In the Library With Groucho
In By the Book (June 21), Candace Bushnell reveals that a favorite book during her teenage years was “Groucho and Me.” This might surprise those who don’t think of Groucho Marx as a writer. But he was a nimble stylist, as anybody reading his collected correspondence, “The Groucho Letters,” will discover.
Like his brothers, Marx didn’t get very far in school. But he is a role model for autodidacticism, as he was a lifelong avid reader. When he met his pen pal T.S. Eliot for dinner one night, he was able and eager to discuss “King Lear.”
His book of letters includes one sent to the dance-lesson impresarios Arthur and Kathryn Murray. Marx congratulates them on the engagement of their daughter, but expresses mock bitterness that she had opted to choose for a life partner “an obscure quack named Heimlich” over him, the fun-loving and famous Groucho. Some years later, this “obscure quack” attained permanent nonobscurity when the procedure bearing his name became world famous, saving many lives. Groucho must have been pretty choked up.
Thomas Hart Benton and Race
Mark Harris’s review of “American Epics: Thomas Hart Benton and Hollywood” (May 31) has just come to my attention, and I would like to address its comments about what the reviewer calls Benton’s “race problem.”
My father painted black people as part of the fabric of life in this country, in an era when African-Americans were segregated and virtually ignored in every way. No other artist of his time was doing that, and he did it to prove their existence in our lives and that their lives were as meaningful in every way as everyone else’s. Look, for example, at his paintings “Instruction,” “Aaron,” “The Lovers” and “Water Boy.” All are portraits of people he knew and thought were beautiful.
In these terrible and troubled times, it is especially unfair to casually accuse anyone of being a racist. And particularly someone like my father, who devoted himself to humanitarian ideals. He put his career on the line by selecting subject matter that most people in this country were trying to ignore. The reviewer seems to have no idea what it was like living in the 1930s, ’40s and ’50s, and the courage it took for him to choose the most controversial topics of his times.

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Patent US7052618 - Nanostructures and methods of making the same - Google Patents
Nanostructures and methods of making the same are described. In one aspect, a film including a vector polymer comprising a payload moiety is formed on a substrate. The film is patterned. Organic components of the patterned film are removed to form a payload-comprising nanoparticle....http://www.google.com/patents/US7052618?utm_source=gb-gplus-sharePatent US7052618 - Nanostructures and methods of making the same
Publication number US7052618 B2
Application number US 10/766,639
Also published as EP1559678A2, EP1559678A3, US20050164132
Publication number 10766639, 766639, US 7052618 B2, US 7052618B2, US-B2-7052618, US7052618 B2, US7052618B2
Inventors Nicolas J. Moll, Daniel B. Roitman, Jennifer Q. Lu
Patent Citations (9), Non-Patent Citations (5), Referenced by (15), Classifications (25), Legal Events (4)
US 7052618 B2
1. A nanostructure fabrication method, comprising:
forming on a substrate a film including a vector polymer comprising a payload moiety;
removing organic components of the patterned film to form a payload-comprising nanoparticle.
2. The method of claim 1, wherein the vector polymer comprises a number of repeat units each comprising the payload moiety.
3. The method of claim 2, wherein the payload moiety includes at least one semiconductor atom.
4. The method of claim 2, wherein the payload moiety includes at least one metal atom.
5. The method of claim 4, wherein the payload moiety includes at least one iron atom.
6. The method of claim 5, wherein the vector polymer is one of a poly(vinyl ferrocene), a poly (iron III acrylate), and an iron-comprising diblock polymer.
7. The method of claim 1, wherein the film includes the vector polymer and a polymer binder.
8. The method of claim 7, wherein the polymer binder contains ligands attracted to the payload moiety.
9. The method of claim 7, wherein the vector polymer includes polyvinyl ferrocene.
10. The method of claim 9, wherein the polymer binder includes one of poly(dimethylglutarimide) (PMGI), poly(ethylenimine), poly (vinyl pyridine), poly (vinyl alcohol), poly (ethylene/acrylic acid), poly (acrylic acid) and its sodium salt, poly (maleic acid), poly(dimethylglutarimide), polyamic acid, poly (methyl methacrylate acid), poly (ethylene glycol), poly(propylene glycol), poly(dialkylsiloxane), polysilane, silsesquioxane, and an aluminum-comprising gel.
11. The method of claim 7, wherein the vector polymer is polystyrene-b-iron-complexed poly(vinyl pyridime) and the polymer binder is polystyrene.
12. The method of claim 7, wherein the vector polymer is polymethyl methacrylate-b-poly (iron III acrylate) and the polymer binder is polymethyl methacrylate.
13. The method of claim 7, wherein the forming comprises spin-casting onto the substrate a mixture comprising the vector polymer and the polymer binder in a casting liquid.
14. The method of claim 1, wherein the vector polymer is a diblock polymer A–B, where A includes multiple repeat units each comprising the payload moiety, and B includes multiple repeat units each comprising C, H, N, and O atoms.
15. The method of claim 14, wherein the repeat units of B each further includes at least one of a silicon moiety and an aluminum moiety.
16. The method of claim 1, wherein the film is formed on the substrate with a thickness less than 120 nm.
17. The method of claim 1, wherein patterning the film comprises applying a photoresist over the film, patterning the photoresist, and transferring the photoresist pattern to the film.
18. The method of claim 17, further comprising forming a barrier layer between the photoresist and the film.
19. The method of claim 1, further comprising reflowing the patterned film by heating the patterned film to a temperature above a glass transition temperature of a component of the patterned film.
20. The method of claim 1, wherein removing organic components comprises removing at least one organic moiety of the patterned film.
21. The method of claim 20, wherein at least one organic moiety is removed by oxidation.
22. The method of claim 1, wherein removing organic components comprises converting the payload moiety from a metal species into a salt.
23. The method of claim 1, wherein removing organic components comprises converting the payload moiety into a non-volatile oxide.
24. The method of claim 1, further comprising forming at least one carbon nanotube at the payload-comprising particle.
25. A nanostructure fabrication method, comprising:
forming on a substrate a film including a vector polymer comprising a one or more types of repeat units, at least one of the repeat unit types contains a payload moiety;
removing organic components of the patterned film to form respective nanoparticles comprising an average number of payload-moiety-comprising components substantially equal to the number of payload-moiety-comprising repeat units in the vector polymer.
26. A nanostructure fabrication method, comprising:
forming on a substrate a film comprising vector polymers each comprising an inorganic payload moiety;
patterning the film to form discrete regions of the film on the substrate; and
removing organic components of the discrete regions of the film to form on the substrate respective nonvolatile nanoparticles each comprising the inorganic payload.
27. The method of claim 26, wherein the removing comprises transforming the discrete regions of the film into respective nonvolatile nanoparticles each consisting essentially of at least one of the inorganic payloads.
28. The method of claim 26, wherein the removing comprises transforming the discrete regions of the film into respective nonvolatile nanoparticles each consisting essentially of a composition of matter that is derived from at least one of the inorganic payloads.
Nanostructures are structures that have sizes ranging from about 0.5 nanometers (nm) to about 1 micrometer (μm). Nanostructures exist in a wide variety of different forms, including nanoparticles and nanotubes. As used herein, the term “nanoparticle” refers to a physical composition of matter characterized by a size (e.g., diameter) ranging from about 0.5 nm to about 100 nm. The term “nanotube” refers to an elongated hollow or solid structure having a cross section or diameter less than 1 μm. Carbon nanotubes, for example, typically are hollow graphite tubules that typically have diameters ranging on the order of about 1–50 nm. Carbon nanotubes typically have rigid three-dimensional carbon structures that have high surface areas, low bulk density, and high crush strength.
Nanoparticles in the size range of 1–50 nm have been attached to substrates for a variety of purposes, including many applications that leverage the catalytic properties of certain nanoparticles. Many techniques generate surfaces that are coated with a random distribution of nanoparticles. For example, Klinke et al. (“Thermodynamic calculations on the catalytic growth of carbon nanotubes,” AIP Conf. Proc. 685(1) 447 (20 Oct. 2003)), describe a thin film formed by dipping or spin-casting of Fe(NO3)3 dissolved in propanol can then be thermally treated so that it forms small Fe2O3 nanoparticles. Zhang et al. (“Imaging as-grown single-walled carbon nanotubes originated from isolated catalytic nanoparticles,” Appl. Phys. A, Vol. 74, 325–328 (2002)) describe the use of hollow proteins such as ferritin to capture and store Fe species and subsequently form ferric oxide nanoparticles by removing the host protein. Kong et al. (“Synthesis of individual single-walled carbon nanotubes on patterned silicon wafers,” NATURE, Vol. 395, 29 Oct. 1998, pp 878 ff.) describe mixing Fe(NO3)3 solution with Al2O3 nanoparticles and forming iron oxide nanoparticles onto the Al2O3 matrix. In all of these methods the placement of the iron-containing nanoparticles is random.
Other nanoparticle generation techniques have been proposed in which the locations of the nanoparticles on a surface are controlled with lithographic precision. For example, U.S. Pat. No. 6,346,189 describes a method of forming carbon nanotubes on catalyst islands. The catalyst islands are formed by exposing an underlying substrate through holes etched in a photoresist layer. The holes are about 3–5 μm in size and are spaced apart by a distance of about 10 μm. A solution of Fe(NO3)3 in methanol mixed with alumina nanoparticles about 15–30 nm in size is deposited on the photoresist and the surface areas of the substrate exposed by the holes. A lift-off process is performed to leave isolated islands of Fe(NO3)3-coated alumina nanoparticles adhering to regions of the substrate that were exposed by the holes in the photoresist. The substrate is heated to decompose the Fe(NO3)3 into Fe2O3. Single-walled nanotubes are formed by heating the substrate and exposing the catalyst islands to pure methane at a temperature of about 850–1000° C.
The invention features nanostructure apparatus and methods of making the same. The invention enables nanoparticles to be formed with precisely-controlled sizes and at locations that are controlled with lithographic precision.
In one aspect of the invention, a film including a vector polymer containing a payload moiety is formed on a substrate. The film is patterned. Organic components of the patterned film are removed to form a payload-containing nanoparticle.
In another aspect of the invention, a film including a vector polymer is formed containing one or more types of repeat units. At least one of the repeat unit types contains a payload moiety. The film is patterned. Organic compoents of the patterned film are removed to respective nanoparticles containing an average number of payload moiety-containing components substantially equal to the number of payload-moiety-containing repeat units in the vector polymer.
In another aspect, the invention features apparatus that includes a set of substantially identical substrates, wherein at least one reference feature is disposed on each substrate, and at least one nanoparticle is disposed on each substrate. The nanoparticles have an average size of at most 10 nm and are positioned relative to respective reference features on corresponding substrates within a range of distances distributed with a standard deviation of at most 0.1 μm.
FIG. 1 is a flow diagram of a nanostructure fabrication method.
FIG. 2 is a diagrammatic cross-sectional side view of a vector-polymer-containing film formed on a substrate.
FIG. 3A is a diagrammatic cross-sectional side view of a photoresist layer formed over the vector-polymer-containing film shown in FIG. 2.
FIG. 3B is a diagrammatic cross-sectional side view of an optional barrier layer disposed between an overlying photoresist layer and the vector-polymer-containing film shown in FIG. 2.
FIG. 4 is a diagrammatic cross-sectional side view of a patterned photoresist layer formed on the vector-polymer-containing film shown in FIG. 2.
FIG. 5 is a diagrammatic cross-sectional side view of the photoresist layer and the vector-polymer-containing film shown in FIG. 4 after the photoresist pattern has been transferred to the vector-polymer-containing film.
FIG. 6 is a diagrammatic cross-sectional side view of the patterned vector-polymer-containing film shown in FIG. 5 after the overlying patterned photoresist layer has been removed.
FIG. 7 is a diagrammatic cross-sectional side view of precursor nanoparticles corresponding to reflowed versions of the patterned vector-polymer-containing film shown in FIG. 6.
FIG. 8 is a diagrammatic cross-sectional side view of nanoparticles formed on the substrate after substantially all organic moieties have been removed from the precursor nanoparticles shown in FIG. 7.
FIG. 9 is a diagrammatic cross-sectional side view of carbon nanotubes extending from the nanoparticles shown in FIG. 8.
FIG. 1 shows an embodiment of a method of fabricating a nanostructure that involves patterning a film including a vector polymer that has a payload moiety, and removing organic components of the patterned film to form a payload-containing nanoparticle. This method enables nanoparticles to be formed with precisely-controlled sizes and at locations that may be controlled with lithographic precision.
Referring to FIGS. 1 and 2, a film 10 is formed on a substrate 12 (process 14). The substrate 12 may be any type of substrate that is compatible with the lithographic processes and the organic component removing processes described in detail below. Exemplary substrate materials include silicon, alumina, quartz, silicon oxide, and silicon nitride.
Film 10 includes a vector polymer 16 dispersed in a polymer binder 18. Film 10 may be formed on substrate 12 by spin-casting a mixture of the vector polymer 16 and the polymer binder 18 dissolved or dispersed in a casting liquid, which allows film 10 to be formed with a uniform thickness across substrate 12. The term “mixture” refers to a combination of two or more components which may be in the form of a solution (i.e., a mixture of a solute in a corresponding solvent) or a suspension (i.e., when particles are mixed with but undissolved in a fluid). In some cases, a given mixture initially may be in the form of a solution, but over time or with certain treatment the mixture may be transformed into a suspension. Standard spin-casting equipment that is used in the semiconductor industry to form layers of photoresist on substrates may be used to form film 10. As explained in detail below, in some implementations, the thickness (t) of film 10 and the relative proportions of the vector polymer 16 and the polymer binder 18 are selected to achieve a distribution of vector polymer molecules across the surface of substrate 12 that allows the ratio of the number of vector polymer molecules used to form each nanoparticle to be controlled with a prescribed statistical accuracy.
The vector polymer 16 is a polymer that may be processed to deliver the payload moiety on the surface of substrate 12. As used herein, the term “polymer” refers to a chemical compound or mixture of compounds formed by polymerization and consisting essentially of repeating structural units. A polymer may have a large number of repeating structural units or a polymer may have relatively few repeating structural units, in which case the polymer often is referred to as an “oligomer”. In some implementations, the vector polymer 16 includes multiple types of repeat units at least one of which includes the payload moiety so that the total number of payload moieties in the vector polymer 16 is equal to the number of payload-containing repeat units. The payload moiety is any atomic or molecular species that can be used to form a nonvolatile nanoparticle on the substrate surface. The nonvolatile nanoparticles may be an aggregation of payload moieties or have a composition of matter derived from an aggregation of payload moieties. The payload moiety may be attached or otherwise complexed to the repeat unit of the vector polymer 16 in the form of an independent atomic or molecular species or as part of a group of atoms, such as a radical group. Exemplary payload moieties include metal species (e.g., transition metal species, such as iron, molybdenum and zinc, or other metal species, such as gold, depending on the desired properties of the nanoparticles to be formed on the surface of substrate 12) and semiconductor species (e.g., elemental semiconductor species, such as silicon and germanium, and compound semiconductor species, such as III-V and II-VI semiconductor compounds).
The polymer binder 18 substantially inhibits phase separation of the vector polymer 16 during the film formation and lithography patterning process. In some implementations, the polymer binder 18 includes ligands that are attracted to at least some portion of the vector polymer 16 to substantially inhibit such phase separation.
In some exemplary implementations, the payload moiety of the vector polymer 16 includes iron atoms, which are used for forming nanoparticles containing iron oxide. An exemplary iron-containing vector polymer is polyvinyl ferrocene that includes a number of repeat units corresponding to the average number of iron atoms desired in the nanoparticles to be formed on substrate 12. Iron-containing vector polymers may be dispersed in any one of a wide variety of different polymer binders, including poly(dimethylglutarimide) (PMGI), poly(ethylenimine), poly (vinyl pyridine), poly (vinyl alcohol), poly (ethylene/acrylic acid), poly (acrylic acid) and its sodium salt, poly (maleic acid), poly(dimethylglutarimide), polyamic acid, poly (methyl methacrylic acid), poly (ethylene glycol), and poly (propylene glycol). The polyvinyl ferrocene vector polymer and the polymer binder may be dissolved or dispersed in a mutual solvent, such as cyclohexanone, to form the mixture that is used to form film 10.
Other iron-containing vector polymers include poly (iron III acrylate) and diblock polymers consisting of a chain of an iron-containing polymer spliced to a chain that has an identical repeat unit as the polymer binder 18. Exemplary vector polymer/polymer binder combinations of this type include: a polystyrene-b-iron-complexed poly(vinyl pyridine) vector polymer dispersed in a polystyrene polymer binder; and a polymethyl methacrylate-b-poly (iron III acrylate) vector polymer dispersed in a polymethyl methacrylate polymer binder.
In some embodiments, the vector polymer is a diblock polymer A–B, where A consists of the payload-containing repeat units and B consists of non-payload-containing repeat units. In some implementations, the B repeat units contain C, H, N and O atoms, which are removed during the process of removing organic components described below. In some of these implementations, the B material also contains atoms, such as silicon or aluminum moieties. During the organic component removing process, these latter groups coalesce into silicon oxide, silicon nitride, aluminum oxide or aluminum nitride. If the payload units in these implementations consist of iron, then the final results produce iron oxide nanoparticles entrained within a aluminum oxide(nitride) or silicon oxide(nitride) matrix. Systems of this type provide excellent adhesion of the iron oxide nanoparticles and prevent aggregation. This type of inorganic polymer also may be used as a polymer binder or as a part of the polymer binder.
Referring to FIGS. 1, 3A, 3B, and 4, after the film 10 has been formed on substrate 12 (process 14), the film 10 is patterned (process 20). In the illustrated embodiments, the film 10 is patterned by transferring a pattern lithographically formed in an overlying photoresist layer 22 to the underlying film 10. In some implementations, the photoresist layer 22 is formed directly on the film 10, as shown in FIG. 3A. In other implementations, a barrier layer 24 (e.g., a low-temperature plasma-enhanced chemical vapor deposition (PECVD) oxide layer) is formed between the photoresist layer 22 and the film 10 to protect the film 10 against degradation during patterning, as shown in FIG. 3B (process 26). The photo resist layer 24 may be patterned using standard semiconductor photolithographic patterning techniques (e.g., standard optical and electron beam lithography techniques). In some embodiments, the photoresist layer 22 is patterned into an array of cylindrical dots 28, as shown in cross-section in FIG. 4. The sizes of the dot patterns depend at least in part on the sizes of the final nanoparticles to be formed and the properties (e.g., the length) of the vector polymer molecules. In one exemplary implementation for fabricating nanoparticles 1–10 nm in size from a ferrocene vector polymer with 200 iron-atom-containing repeat units, the cylindrical dots are 500 nm in diameter (d).
As shown in FIG. 5, the photoresist pattern is transferred to the underlying film layer 10 to complete the patterning process (process 20). The pattern may be transferred using a standard organic etching process. For example, in some implementations, a dry-etching process, such as a plasma etching process (e.g., a reactive ion etching process) is used to transfer the photoresist pattern to the film 10. In some implementations, an additional etching or cleaning process may be needed to remove residual contamination from the locations between the locations of the patterned film. For example, iron-based contamination may be cleaned with a wet etchant, such as a dilute mixture of hydrochloric acid and water.
Referring to FIG. 6, after the photoresist pattern has been transferred to the film 10, the remainder of the patterned photoresist layer 22 is removed using standard photoresist removal techniques, such as rinsing the photoresist in a photoresist solvent. After the photoresist has been removed, the patterned film is disposed on the surface of substrate 12 in the form of precursor nanoparticles 30. In the illustrated embodiments, substantial phase separation of the vector polymer 16 and the polymer binder 18 is avoided during the patterning process (process 26) either because the vector polymer complexes with the polymer binder or, in the case where the vector polymer is a diblock polymer A–B, because the polymer binder has repeat units corresponding to block B and therefore acts as a strong dispersant for the diblock vector polymer. Avoiding phase separation between the vector polymer and the polymer binder prevents the vector polymer molecules from clustering and, thereby, creates a nonuniform distribution of vector polymer molecules in film 10, where some domains have a high vector polymer concentration and other domains have a low vector polymer concentration. In this way, a uniform distribution of vector polymer molecules is maintained, allowing each precursor nanoparticle 30 to behave as a closed system having the same probability of containing the target number of vector polymer molecules.
In implementations in which a diblock vector polymer is used, phase separation is substantially avoided during the patterning process. Although thermal processing during the patterning process may cause the diblock vector polymer molecules to coil, the vector polymer and the polymer binder do not phase separate to create a nonuniform distribution of vector polymer molecules in film 10. For example, with polystyrene-b-iron-complexed poly(vinyl pyridine) the iron-complexed poly(vinyl pyridine) end of the chain will form a coil, but the polystyrene end of the chain behaves like the polystyrene polymer binder, preventing clustering of the vector polymer molecules.
In some implementations, various physical and chemical parameters are selected so that on average a single instance of the vector polymer 16 is contained within each of the precursor nanoparticles 30 that are formed by the film patterning process. This result is achieved by proper selection of the thickness (t) of film 10, the size (e.g., the diameter d) of the photoresist patterns, and the ratio of the vector polymer 16 concentration to the polymer binder 18 concentration in film 10. For a spin-cast film thickness t, and photoresist pattern dots with a diameter d, the volume of each patterned precursor nanoparticle 30 is πtd2/4, which is about 2×107 nm3 for an implementation in which t is 100 nm and d is 500 nm. In an exemplary embodiment in which the vector polymer is (vinyl ferrocene)200, the molecular weight of the vector polymer is 42,400, the weight of a single 200-mer is approximately 7.04×10−20 grams, and the weight concentration of polyvinyl ferrocene in a PMGI polymer binder is 3.5 ppm (parts per million), assuming that the density of PMGI is 1.00 grams per cubic centimeter. This set of parameters produces a substantially uniform distribution of (vinyl ferrocene)200 on substrate 12 that allows on average a single instance of (vinyl ferrocene)200 to be contained within each of the precursor nanoparticles 30.
In some instances, the precursor nanoparticles 30 contain truncated portions of the vector polymer 16. Assuming that the vector polymer molecules are substantially stretched out parallel to the surface of substrate 12 with a characteristic length L, which is proportional to the number of repeat units in the vector polymer, the vector polymer truncation probability (P) may be approximated by equation (1):
P = π d 2 - d 2 ( θ - sin θ ) π d 2 ≈ 4 L π d ( 1 )
where θ=2Arcos(L/d). For L<<d, the ratio of truncated to full-size vector polymer molecules in precursor nanoparticles 30 is approximately 1.27 L/d. In the case of (vinyl ferrocene)200, L is estimated to be at most 76 nm and, assuming d is 500 nm, the truncation probability is about 20%. In the case of diblock vector polymer film formulations where the iron-containing block has coiled, the length L that is used to compute the truncation probability in equation (1), above, should be the coil diameter of the vector polymer rather than its length, substantially reducing the truncation probability.
In addition to truncation considerations, the statistical distribution of vector polymers in each precursor nanoparticle 30 also determines the structure of the final nanoparticles. This distribution is determined by Poisson statistics. Assuming there are N vector polymer molecules per precursor nanoparticle, there is a standard deviation of N0.5 molecules per precursor nanoparticle. In one illustrative example, if N is set to 1, in an array of 100 precursor nanoparticles, there will be on average thirty-seven precursor nanoparticles without any vector polymer molecules, thirty-seven precursor nanoparticles with exactly one vector polymer molecule, and twenty-six precursor nanoparticles that contain two or more vector polymer molecules. In some applications, nanoparticles formed from the precursor nanoparticles containing two or more vector polymer molecules (or nanostructures formed from such nanoparticles) may exhibit properties that are different from the properties exhibited by the nanoparticles formed from precursor nanoparticles containing exactly one vector polymer (or nanostructures formed from such nanoparticles). This allows the uniform population of nanoparticles made from precursor nanoparticles containing exactly one vector polymer to be identified and isolated from non-conforming nanoparticles and used in a desired application.
Referring back to FIG. 1 and to FIGS. 7 and 8, organic components of the precursor nanoparticles 30 corresponding to the patterned film islands are removed to form respective payload-containing nanoparticles (process 32). During this process the respective volumes of the precursor nanoparticles 30 are reduced (e.g., by removing or driving-off unwanted components or moieties of the vector polymer and the polymer binder) and leaving behind a higher concentration of the desired final payload-moiety-containing nanoparticle composition or by conversion of the inorganic polymer component into inorganic matrix such as Silicon Oxide, Silicon Nitride, Aluminum Oxide and Aluminum Nitride.
In some implementations, the precursor nanoparticles 30 initially are reflowed by heating the precursor nanoparticles 30 to a temperature above a glass transition temperature of a component of the patterned film. The predominant component of each precursor nanoparticle 30 typically is the polymer binder, in which case the glass transition temperature of the precursor nanoparticles 30 substantially corresponds to the glass transition temperature of the polymer binder. For example, in implementations in which the polymer binder is PMGI, the precursor nanoparticles 30 are heated to a temperature above the glass transition temperature of PMGI (i.e., 190° C.) to reflow the precursor nanoparticles 30. During the reflow process, each of the precursor nanoparticles 30 reflows to a size and a shape that are determined by the surface energy and the wetting angle of the precursor nanoparticles 30 with respect to the surface of substrate 12.
After the reflowing process, organic moieties in the precursor nanoparticles 30 are removed. In general, organic moieties may be removed by any process that selectively decomposes organic components of the precursor nanoparticles 30 and leaves respective nonvolatile, payload-containing nanoparticles on the surface of substrate 12. In some implementations, organic moieties are removed by oxidative ablation. In one such implementation, organic moieties are removed by exposing the precursor nanoparticles 30 to UV light and ozone. During the organic moiety removal process, the precursor nanoparticles 30 shrink substantially isotropically toward their respective centers of mass, as shown in FIG. 8. In another implementations, the reduction involves the conversion of the polymer binder or a part of polymer vector into an inorganic matrix surrounding the payload containing particles.
The organic moiety removal process removes, most if not substantially all of the organic components of the precursor nanoparticles 30, and leaves a set of respective payload-containing nanoparticles 34 distributed across the surface of the substrate 12, as shown in FIG. 9. As explained above, the payload-containing nanoparticles may correspond exactly to an aggregation of payload moieties or they may be formed of a composition of matter that is derived from an aggregation of payload moieties, or they may be formed of a composition of matter that is derived from the payload moiety of the vector polymer or an aggregation of such payload moieties. For example, in implementations in which the vector polymer is a vinyl ferrocene, the payload moieties are iron atoms. In some of these implementations, the nanoparticles 34 are formed of iron oxide (Fe2O3), which is generated by oxidative ablation of the vinyl ferrocene polymer in the precursor nanoparticles 30 (e.g., by exposure to UV light and ozone, calcination, or pyrolysis). In other of these implementations, the nanoparticles 34 may be formed of a different iron salt, such as Fe(SO4). In other exemplary implementations, the vector polymer may be a metallo-polymer containing gold moieties, in which case the nanoparticles may be formed of gold.
The embodiments described in detail above enable nanoparticles 34 to be formed at precisely-controlled locations on the surface of substrate 12 as a result of the ability to lithographically place the precursor nanoparticles 30. Such lithographic placement control enables substantially identical substrates to be formed in batches with at least one nanoparticle positioned on the substrate surface relative to respective reference features on corresponding substrates within a range of distances distributed with a standard deviation of at most 0.1 μm, which is a typical lithographic alignment capability in a semiconductor manufacturing environment. The reference features may correspond, for example, to structural features of a device or an integrated circuit formed or being formed on the substrates. In addition, these embodiments enable the resulting nanoparticles 34 to be formed with precisely-controlled sizes within the range of 0.5 nm to about 50 nm as a result of control over the chemistry, thickness and the lithographic patterning of the initial vector-polymer-containing film 10. The sizes of the nanoparticles 34 may be determined by transmission electron microscopy (TEM), atomic force microscopy (AFM) and, for larger particles, scanning electron microscopy (SEM).
The resulting nanoparticles 34 may be used for a wide variety of different applications. For example, in some implementations, the nanoparticles 34 are formed of a material (e.g., iron oxide, molybdenum oxide, zinc oxide, or a mixture of iron, molybdenum and ruthenium oxides, or certain elemental metals) that acts as a catalyst in the formation of carbon nanotubes. As shown in FIG. 10, in implementations in which the size (e.g., the diameter) of the catalytic nanoparticles 34 are typically within a range of 0.5–10 nm, and more typically within a range of 1–3 nm, substantially single-walled carbon nanotubes 36 may be formed at each of the nanoparticles. The single-walled carbon nanotubes 36 extend from the tops of the nanoparticles 34 and have diameters in the range of about 1–5 nm. In some exemplary implementations, the carbon nanotubes 36 may be formed by heating the substrate 12 with the catalytic nanoparticles in a furnace at a temperature of about 850–1000° C. and flowing 99.99% pure methane over the catalytic nanoparticles 34 at a velocity of about 2–20 centimeters per 20 second.
US20010006851 * Jan 5, 2001 Jul 5, 2001 Choi Jun-Hee Method of forming micro structure having surface roughness due to nano-sized surface features
WO2003050332A1 Dec 6, 2002 Jun 19, 2003 Ashland Inc. Preparation of stable carbon nanotube dispersions in liquids
1 Christian Klinke, Jean-Marc Bonard and Klaus Kern, "Thermodynamic calculations on the catalytic growth of carbon nanotubes," AIP Conf. Proc. 685(1) 447 (Oct. 20, 2003).
2 Georg S. Duesberg, Andrew P. Graham, Maik Liebau, Robert Seidel, Eugen Unger, Franz Kreupl, and Wolfgang Hoenlein, "Growth of Isolated Carbon Nanotubes with Lithographically Defined Diameter and Location," Nano Letters, vol. 3, Issue 2, 2003, pp. 257259.
3 Jing Kong et al., Synthesis of individual singel-walled carbon nanotubes on patterned silicon wafers, Nature, vol. 395, pp. 878-881 (Oct. 1998).
4 Peter Kruse, Erin R. Johnson, Gino A. DiLabio, and Robert A. Wolkow, "Patterning of Vinylferrocene on HSi(100) via Self-Directed Growth of Molecular Lines and STM-Induced Decomposition," Nano Letters, vol. 2, 8, pp. 807-810 (2002).
5 Y. Zhang, Y. Li, W. Kim, D. Wang, H. Dai., "Imaging as-grown single-walled carbon nanotubes originated from isolated catalytic nanoparticles," Appl. Phys. A, vol. 74, 325-328 (2002).
US20080241493 * Feb 29, 2008 Oct 2, 2008 Fujitsu Limited Substrate structure and manufacturing method of the same
U.S. Classification 216/11, 430/322, 216/41, 977/700, 977/773
International Classification C01B31/02, G03F7/40, G03F7/11, B44C1/22, H01L51/30, B82B3/00, C08L101/00
Cooperative Classification C01B32/162, H01L51/0048, Y10S977/70, Y10S977/773, B82Y40/00, B82Y30/00, B82Y10/00, C01B2202/02
European Classification B82Y30/00, B82Y10/00, C01B31/02B4B2, B82Y40/00, H01L51/00M4D
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Related Articles by Review for PubMed (Select 14750087) - PubMed - NCBI
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Select item 147500871.Apolipoprotein E and renal disease.Liberopoulos E, Siamopoulos K, Elisaf M.Am J Kidney Dis. 2004 Feb;43(2):223-33. Review.PMID: 14750087 Similar articles Select item 118522532.Etiological significance of apolipoprotein E mutations in lipoprotein glomerulopathy.Saito T, Ishigaki Y, Oikawa S, Yamamoto TT.Trends Cardiovasc Med. 2002 Feb;12(2):67-70. Review.PMID: 11852253 Similar articles Select item 164312493.Impact of lipoprotein glomerulopathy on the relationship between lipids and renal diseases.Saito T, Matsunaga A, Oikawa S.Am J Kidney Dis. 2006 Feb;47(2):199-211. Review.PMID: 16431249 Similar articles Select item 156306294.ApoE: crossroads between Alzheimer's disease and atherosclerosis.Stojakovic T, Scharnagl H, März W.Semin Vasc Med. 2004 Aug;4(3):279-85. Review.PMID: 15630629 Similar articles Select item 91638485.Abnormal lipid metabolism and renal disorders.Saito T.Tohoku J Exp Med. 1997 Mar;181(3):321-37. Review.PMID: 9163848 Free ArticleSimilar articles Select item 233840346.Signaling pathways of apoE and its role of gene expression in glomerulus diseases.Zhou TB.J Recept Signal Transduct Res. 2013 Apr;33(2):73-8. doi: 10.3109/10799893.2013.765466. Epub 2013 Feb 6. Review.PMID: 23384034 Similar articles Select item 157165867.Lipid homeostasis and apolipoprotein E in the development and progression of Alzheimer's disease.Lane RM, Farlow MR.J Lipid Res. 2005 May;46(5):949-68. Epub 2005 Feb 16. Review.PMID: 15716586 Free ArticleSimilar articles Select item 241498348.A possible structural basis behind the pathogenic role of apolipoprotein E hereditary mutations associated with lipoprotein glomerulopathy.Stratikos E, Chroni A.Clin Exp Nephrol. 2014 Apr;18(2):225-9. doi: 10.1007/s10157-013-0886-5. Epub 2013 Oct 23. Review.PMID: 24149834 Similar articles Select item 164906349.Lipoprotein glomerulopathy: a new apolipoprotein E mutation with enhanced glomerular binding.Sam R, Wu H, Yue L, Mazzone T, Schwartz MM, Arruda JA, Dunea G, Singh AK.Am J Kidney Dis. 2006 Mar;47(3):539-48. Review.PMID: 16490634 Similar articles Select item 1563063410.Apolipoprotein E and familial dysbetalipoproteinemia: clinical, biochemical, and genetic aspects.Smelt AH, de Beer F.Semin Vasc Med. 2004 Aug;4(3):249-57. Review.PMID: 15630634 Similar articles Select item 1179096011.Apolipoprotein E and diets: a case of gene-nutrient interaction?Rubin J, Berglund L.Curr Opin Lipidol. 2002 Feb;13(1):25-32. Review.PMID: 11790960 Similar articles Select item 1682029812.Apolipoprotein E structure: insights into function.Hatters DM, Peters-Libeu CA, Weisgraber KH.Trends Biochem Sci. 2006 Aug;31(8):445-54. Epub 2006 Jul 3. Review.PMID: 16820298 Similar articles Select item 1528467913.Genetic risk factors in myocardial infarction at young age.Incalcaterra E, Hoffmann E, Averna MR, Caimi G.Minerva Cardioangiol. 2004 Aug;52(4):287-312. Review.PMID: 15284679 Similar articles Select item 1695569014.ApoE gene therapy to treat hyperlipidemia and atherosclerosis.Harris JD, Evans V, Owen JS.Curr Opin Mol Ther. 2006 Aug;8(4):275-87. Review.PMID: 16955690 Similar articles Select item 1531027015.Apolipoprotein E structure and substrate and receptor-binding activities of triglyceride-rich human plasma lipoproteins in normo- and hypertriglyceridemia.Dergunov AD.Biochemistry (Mosc). 2004 Jul;69(7):720-37. Review.PMID: 15310270 Similar articles Select item 917685616.Lipoprotein glomerulopathy: a new role for apolipoprotein E?Karet FE, Lifton RP.J Am Soc Nephrol. 1997 May;8(5):840-2. Review. No abstract available. PMID: 9176856 Free ArticleSimilar articles Select item 1722430917.Apolipoprotein E polymorphism, age and coronary heart disease.Kolovou GD, Anagnostopoulou KK.Ageing Res Rev. 2007 Aug;6(2):94-108. Epub 2006 Dec 20. Review.PMID: 17224309 Similar articles Select item 2416568318.Lipoprotein glomerulopathy in China.Chen Y.Clin Exp Nephrol. 2014 Apr;18(2):218-9. doi: 10.1007/s10157-013-0873-x. Epub 2013 Oct 29. Review.PMID: 24165683 Similar articles Select item 2153423619.Lipoprotein glomerulopathy: first report of 2 not consanguineous Italian men from the same town.Pasquariello A, Pasquariello G, Innocenti M, Minnei F, Funel N, Lorusso P, Barsotti G.J Nephrol. 2011 May-Jun;24(3):381-5. doi: 10.5301/JN.2011.7772. Review.PMID: 21534236 Similar articles Select item 909958720.Molecular genetics of renal diseases.Saito A, Yamazaki H, Nakagawa Y, Arakawa M.Intern Med. 1997 Feb;36(2):81-6. Review.PMID: 9099587 Free ArticleSimilar articles << First< PrevPage of 3Next >Last >>


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How to Sell Yourself on Interviews,...
A covering letter is sent with your CV, and it's your chance to sell yourself a little more, to the person who will hopefully be your future boss! Unlike your CV, which is all about your experience, skills, qualifications etc, your covering letter allows you to express your character, passion and enthusiasm for the position you're about apply to.
If you’re sending your CV speculatively, (ie you’re not sure if they have a job, so you’re contacting them on the outside chance that they will) then this letter will explain why you’ve sent them you CV.
When done well, a covering letter can definitely enhance your chances of being offered a job interview. On the other hand, a poorly written covering letter can blow your chances of work out of the water!
This guide will hopefully help you to write one that will turn the tables in your direction!
Want2get on? is a unique career coaching service that offers 1:1 support for those whowant to draw upon their Christian faith and apply it in a practical way to their job situation.www.want2geton.co.uk Tel: 07503 177126 charles@want2geton.co.ukHow to write a great covering letterAlways send a covering letter with your CV. This is an opportunity to tell an employer a bitabout you and draw their attention to your skills and experience, as documented in yourCV. Never refer to any information which isn’t backed up in your CV.A covering letter is also a chance to put over your enthusiasm for the job (without overdoing it!), which you don’t have a chance of doing in your CV. Don’t forget, an employernot only wants someone with the right skills but also a passion for the job.Before you write your covering letter, do a bit of research. If possible get hold of some forecompany information – annual reports and brochures. You can phone and request these.If you know anyone in a similar field, talk to them, get some inside information and use it toyour advantage.In your letter:• Enter your full address and postcode followed by your telephone number and e e-mail in the top right hand corner• Always write to a named person and include their job title. If necessary, phone the company and find out who to address it to (especially if it’s a speculative letter). If the advert says write to e.g. Chris Williams, address your letter to Dear Chris (never make assumptions – could be male or female)• Begin the letter with an attention attention-grabbing opening that shows motivation – access the ening company’s website.• Don’t write more than one page of A4. Three paragraphs are usually enough.• Be direct – tell them why you are writing and what you could bring to the job. Why the employer should consider you rat rather than anyone else. This is your chance to sell yourself.• Use your CV to tell them a bit about your background, emphasising relevant skills, qualifications and experience. Stress your enthusiasm, willingness to learn, hard work, travel, ability to work as a member of a team, under pressure and to meet targets etc. k• Why are you interested in them? What is it about the job and/or that particular company which interests you?• The final paragraph should stress your availability for attending an interview.• If you addressed the letter to Dear Mr/Mrs/or first name then use Yours sincerely. If you don’t have a name, start with Dear Sir/Madam and end with Yours faithfully. 2.
If you are sending a speculative letter, your research on the organisation should haveclearly identified a role that you can apply for and the most relevant person to receive yourletter. You should also make it clear in the letter what you wish to achieve – a summerwork placement, a work shadowing opportunity, a permanent post etc. Make sure youfinish by telling them that you will get back in touch with them to discuss this further,preferably stating a date – then make sure you do it.• Remember to keep copies of all the letters and CVs you have sent.Three styles of covering letter – depends to whom you’re writing!(These are not intended to be a template, just a guide) 1) Standard, conservative style for sectors such as business, law, accountancy, retail. Dont send a letter like this for a creative position - theyll stick it straight in the bin.Dear Mr Hughs,Please find enclosed my CV in application for the post advertised in the Guardian on 30November.The nature of my degree course has prepared me for this position. It involved a great dealof independent research, requiring initiative, self-motivation and a wide range of skills. Forone course, [insert course], an understanding of the [insert sector] industry was essential. Ifound this subject very stimulating.I am a fast and accurate writer, with a keen eye for detail and I should be very grateful forthe opportunity to progress to market reporting. I have not only the ability to take on theresponsibility of this position immediately, but also the enthusiasm and determination toensure that I make a success of it.Thank you for taking the time to consider this application and I look forward to hearingfrom you in the near future.Yours sincerely,Joe McBlogs 2) Standard speculative letter - vary according to the nature of the company.Dear Mr Brown,I am writing to enquire if you have any vacancies in your company. I enclose my CV foryour information.As you can see, I have had extensive vacation work experience in office environments, theretail sector and service industries, giving me varied skills and the ability to work with manydifferent types of people. I believe I could fit easily into your team.I am a conscientious person who works hard and pays attention to detail. Im flexible, quickto pick up new skills and eager to learn from others. I also have lots of ideas andenthusiasm. Im keen to work for a company with a great reputation and high profile like 3.
[insert company name].I have excellent references and would be delighted to discuss any possible vacancy withyou at your convenience. In case you do not have any suitable openings at the moment, Iwould be grateful if you would keep my CV on file for any future possibilities.Yours sincerely,Joe McBlogs 3) Letter for creative jobs (in this case, to be a copywriter). The aim of a creative letter is to be original and show you have imagination, but understand what the job entails. Balance is essential: dont be too wacky, or it will turn off the reader. Never send a letter like this to a conservative company.Dear Ms Green, • Confused by commas? • Puzzled by parenthesis? • Stumped by spelling? • Perturbed by punctuation? • Annoyed at the apostrophe? (And alliteration?)Well, youre not alone. It seems that fewer and fewer people can write. Unfortunately, thereare still a lot of people who can read. So theyll spot a gaffe a mile off. And that means itsa false economy, unless youre 100% sure of yourself, to write your own materials. (Or tolet clients do it for themselves.)To have materials properly copywritten is, when one considers the whole process ofpublishing materials and the impact that the client wishes to make, a minor expense.Sloppiness loses clients, loses customers.There is an answer. Me. Firm quotes are free. You can see some of what I do on mymultilingual website at [insert web address]. If youd like, I can get some samples out toyou within 24 hours. And, if you use me, youll have some sort of guarantee that you cansleep soundly as those tens of thousands of copies are rolling off the presses.Luck shouldnt come into it!With kindest regardsJoe McBlogsWant2get on? is a unique career coaching service that offers 1:1 support for those whowant to draw upon their Christian faith and apply it in a practical way to their job situation.www.want2geton.co.uk Tel: 07503 177126 charles@want2geton.co.uk Recommended
How to Sell Yourself on Interviews, Part One LawCrossing

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+ +The collection consists of the name index to pension files held at the National Archives. The files relate to service between 1861 and 1934. Most of the files are for Union Civil War service but also include the War with Spain, Philippine Insurrection, Boxer Rebellion and Regular U.S. military forces. The index is in alphabetical order. + +State and federal governments filed pension records so as to keep track of the fund leaving the treasuries to support the veterans and widows of wars. The Church of Jesus Christ of Latter-day Saints then obtained this collection to help individuals find information about their ancestors. −This index covers service files between the years 1861 and 1916. +Pension applications are usually reliable, depending on the memory of the applicant and the records to which he had access. −== Record Description ==+For a list of records by surnames currently published in this collection, select the [https://familysearch.org/search/image/index#uri=https%3A//api.familysearch.org/records/collection/1919699/waypoints Browse]. −The collection consists of the name index to pension files held at the National Archives. The files relate to service between 1861 and 1916. Most of the files are for Union Civil War service but also include the War with Spain, Philippine Insurrection, Boxer Rebellion and Regular U.S. military forces. The index is in alphabetical order.+== Record Content ==
− −==== Examples of Source Citations for a Record in This Collection ==== − −*United States. Bureau of the Census. 12th census, 1900, digital images, From FamilySearch Internet (www.familysearch.org: September 29, 2006), Arizona Territory, Maricopa, Township 1, East Gila, Salt River Base and Meridian; sheet 9B, line 71 −*Mexico, Distrito Federal, Catholic Church Records, 1886-1933, digital images, from FamilySearch Internet (www.familysearch.org: April 22, 2010), Baptism of Adolfo Fernandez Jimenez, 1 Feb. 1910, San Pedro Apóstol, Cuahimalpa, Distrito Federal, Mexico, film number 0227023 −== Sources of Information for This Collection ==+The following citation refers to the original source of the information published in FamilySearch.org Historical Record collections. Sources include the author, custodian, publisher and archive for the original records. −<!--bibdescbegin-->"United States, General Index to Pension Files, 1861-1934." ''FmilySearch'' (https://www.familysearch.org). NARA publication T288. National Archives and Records Center. Washington D.C. FHL micrfilm, 544 reels. Family History Library, Salt Lake City, Utah.<!--bibdescend-->+{{Collection citation | text= "United States, General Index to Pension Files, 1861-1934." Index and Images. <i>FamilySearch</i>. http://FamilySearch.org : accessed 2013. Citing NARA microfilm publication T288. Washington, D.C.: Veterans Administration, Publications Service, n.d.}} −[[Category:United_States|Military]]+[[Category:NARA_military_records]]


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The Biggest Boy by Kevin Henkes, Nancy Tafuri |, Hardcover | Barnes & Noble® Books by Author Books by Series Collectible Editions Coming Soon by Date Coming Soon by Subject New Releases NY Times Bestsellers Signed Books Top Books of the Month
$14.26 $14.89 Save 4% Current price is $14.26, Original price is $14.89. You Save 4%.
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The Biggest Boy by Kevin Henkes, Nancy Tafuri
Like MacKinnon's "What Size?" and Jenkins' "Biggest, Strongest, Fastest" , this picture book has fun with size and power. Billy is a big boy who can eat with a fork, get dressed by himself, and reach up high. His parents tell him how big he's growing every day. Soon he'll need new clothes. Soon he'll go to school and ride a bike. Billy says he'll be bigger than his parents: "I'll be the biggest boy in the world." They all imagine Billy as a giant who can drink up lakes and blow the clouds and hang the rainbow round his neck. Then back to the real world, where he's "just the right size" for a boy his age. The extra-large pages have big, clear illustrations in soft watercolor inks and black pen; the pictures show Billy with his toys at home and then as a giant against the sky, wearing the roof of his house as a hat. The story enters right into a child's imaginative play.

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