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Patent US6074568 - Plasma etching used for manufacturing semiconductor devices. - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign in<nobr>Advanced Patent Search</nobr>PatentsA method for diagnosing a function of plasma etching apparatuses and a method for estimating selectivity in an actual etching process in fabrication of semiconductor devices involves generating plasma of a gas mixture including halogen and oxygen in a predetermined condition. An intensity of one of first...http://www.google.com/patents/US6074568?utm_source=gb-gplus-sharePatent US6074568 - Plasma etching used for manufacturing semiconductor devices.Advanced Patent SearchPublication numberUS6074568 APublication typeGrantApplication numberUS 09/002,707Publication dateJun 13, 2000Filing dateJan 5, 1998Priority dateApr 27, 1995Fee statusLapsedAlso published asUS5733820Publication number002707, 09002707, US 6074568 A, US 6074568A, US-A-6074568, US6074568 A, US6074568AInventorsKouichiro Adachi, Satoshi Morishita, Kazuo SugimotoOriginal AssigneeSharp Kabushiki KaishaExport CitationBiBTeX, EndNote, RefManPatent Citations (14), Referenced by (16), Classifications (21), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetPlasma etching used for manufacturing semiconductor devices.US 6074568 AAbstract A method for diagnosing a function of plasma etching apparatuses and a method for estimating selectivity in an actual etching process in fabrication of semiconductor devices involves generating plasma of a gas mixture including halogen and oxygen in a predetermined condition. An intensity of one of first emissions from the plasma at a first wavelength and an intensity of one of second emissions from the plasma at a second wavelength is measured A ratio of the intensity of the one of first emissions to that of the one of second emissions is obtained. The obtained emission intensity ratio is compared with an emission intensity ratio which is previously measured for a plasma condition when the plasma etching apparatus operates normally.
What is claimed is: 1. A method for diagnosing a function of a plasma etching apparatus including the steps of:generating plasma of a gas mixture including halogen and oxygen in a predetermined condition; measuring an intensity of one of first emissions from the plasma at a first wavelength and an intensity of one of second emissions from the plasma at a second wavelength; obtaining a ratio of the intensity of the one of first emissions to that of the one of second emissions; comparing the obtained emission intensity ratio with an emission intensity ratio which is previously measured for a plasma condition when the plasma etching apparatus operates normally. 2. A method for diagnosing a function of a plasma etching apparatus according to claim 1, wherein in the step of measuring the intensities, emissions from oxygen radicals and emissions from halogen radicals are measured as the first and second emissions, respectively.
3. A method for diagnosing a function of a plasma etching apparatus according to claim 2, wherein in the step of measuring intensities, emissions from oxygen radicals at a wavelength of 777 nm and emissions from bromine radicals at a wavelength of 780 nm are measured.
4. A method for diagnosing a function of a plasma etching apparatus according to claim 2, wherein in the step of measuring intensities, emissions from oxygen radicals at a wavelength of 777 nm and emissions from chlorine radicals at a wavelength of 808 nm are measured.
5. A method for diagnosing a function of a plasma etching apparatus according to claim 1, wherein the gas mixture includes at least one of bromine and chlorine as the halogen.
6. A method for diagnosing a function of a plasma etching apparatus according to claim 1,wherein previous measuring of the emission intensity ratio is performed with respect to process parameters for controlling the plasma condition, and wherein the comparing step includes analyzing the obtained and previously measured emission intensity ratios with respect to the process parameters. Description
This is a division of application Ser. No. 08/637,349, filed Apr. 24, 1996, now U.S. Pat. No. 5,733,820.
Recently, as semiconductor devices have become more highly integrated, higher performance in size precision of the patterning processes has been required in order to keep up with progress in the microminiaturization of electronic circuits. Consequently, etching of silicon material (e.g., silicon and material including silicon), typically used for gate electrodes of MOS transistors, has gradually shifted from isotropic wet etching to anisotropic dry etching. For example, reactive ion etching (RIE), electron cyclotron resonance (ECR) plasma etching, and the like are used. In such plasma etching processes, thin layers of silicon material or substrates are patterned by removing particles (atoms, molecules) from a solid surface of the material, using chemical and physical reactions between the solid surface and radicals and ions which are generated in the plasma.
Halogen/halide gas etchant such as fluorine-based etchants, Freon (chlorofluorocarbon)-based etchants, and the like have been used conventionally for silicon material plasma etching. Recently, chlorine-based etchants such as Cl2 and bromine-based etchants such as HBr have been used because the chlorine-based and bromine-based etchants produce anisotropic images which fluorine-based and Freon-based etchants do not. The volatility of reaction products produced by etching reactions between the chlorine-based and bromine-based etchants and silicon material is relatively low so that the etching process does not progress automatically, (i.e., the etching process is progressed-by an ion-assist mechanism). In addition, bond energies Ebond of chlorine and bromine to silicon are lower than those of fluorine and Freon to silicon, (i.e., Esi-F >Esi-O >Esi-Cl >Esi-Br). Thus, chlorine-based and bromine-based etchants increase the etching selectivity of silicon material layers to oxide underlayers compared with fluorine-based and Freon-based etchants.
As semiconductor devices become more highly integrated, the thickness of oxide underlayers (for example, gate insulating films made of a material such as silicon oxide under silicon material gate electrodes) also has been reduced. Accordingly, in patterning silicon material, it is important to improve the selectivity between the silicon material layers and the silicon oxide layers minimize damage to the silicon oxide layers, and improve the size precision. A new dry etching technique is required which satisfies these requirements of high selectivity, less damage, and high size precision.
The solenoid coils 205 are usually divided into at least two coils in order to increase uniformity of the plasma and controllability for the plasma. By varying independently electric current values of the respective coils so an to change position of en ECR region and gradient of the magnetic field 206, the efficiency of the microwave power and the density distribution of the plasma 207 can be changed. The ECR region is a region satisfying an ECR condition of magnetic field strength of 875 Gauss in the magnetic field 206. The electric current values of the solenoid coils 205 are detected by a power meter 208.
In order to improve the size precision of plasma etching as described above, it is important to obtain a plasma condition suitable for fabrication of semiconductor devices by optimizing process parameters such as gas pressure and gas flow rate. More specifically, it is important to measure and obtain a preferable value of selectivity (the ratio of etch rates) in the plasma. For example, it is required to perform an end point detection (EPD) effectively and precisely in order to measure the selectivity. An example of EPD is described in Japanese Patent Publication No. 7-75230, in which density ratios of ions and radicals are monitored by using a mass analyzer.
However, it is time and labor consuming to measure etch rates for various process conditions by using many sample wafers. Thus, empirical knowledge such as experimental data for other etching apparatuses and available information from academic journals and the like are utilized in order to estimate etch rates. For example, a shortage in the number of actual measurements is compensated by making predictions using empirical laws such that a lower discharge voltage in the vacuum chamber is preferable. However, when the process parameters are peculiar for one etching apparatus, it is difficult to make a prediction for another etching apparatus based on the process parameters. In addition, as the number of the process parameters used for controlling the plasma condition is increases, it becomes difficult to make a comprehensive decision for setting the process parameters.
As a more specific example, obtaining optimum values of process parameters (RF power and gas pressure) for improving etch rate is described below. With initial conditions of RF power 100 W and pressure 0.5 Pa, and by varying the RF power while maintaining pressure of 0.5 Pa, it is assumed that an optimum value 80 W of the RF power is obtained for the highest etch rate. After similar measurements for other pressure values, it is revealed that the pressure value of 0.5 Pa is a particular condition and the optimum value of the RF power for other pressure values is 120 W. In such a case, the first measurement for the pressure value of 0.5 Pa would be useless.
Furthermore, in the case where the selectivity is dependent upon a plurality of process parameters, for example, both pressure and RF power, in order to find which of pressure and RF power parameters the selectivity most strongly depends on, it is necessary to perform a large number of measurements using many sample wafers. Determining the dependency of the selectivity on a plurality of process parameters requires a large number of measurements that usually cannot be performed effectively.
In addition, in the case where the process parameters cannot be varied separately due to intrinsic characteristics of the etching device, it is difficult to determine an optimum value for each of the process parameters. For example, total gas flow and gas pressure are not independent, and an increase of the total gas flow increases the pressure and vice versa.
Plasma etching of silicon material is usually performed using organic resist masks which are used as etching masks in photolithography processes, and using halide gas plasma au an etchant. Using organic resist masks reduces the number of fabrication steps for forming the etching masks which are required for silicon oxide masks. Thus, organic resist masks are advantageous for improving the size precision and reducing the cost by reducing the number of fabrication steps. In addition, etching residues are likely to occur in stop portions of patterns when silicon oxide films are etched to form resist masks. Etching residues are not likely to occur in forming organic resist masks. As described above, organic resist masks are easier and simpler to use than are silicon oxide masks.
However, it is known that, in the case where organic resist masks are used for silicon material etching, the selectivity of silicon material layers to underlying oxide layers (silicon oxide films) is degraded compared with the case of using silicon oxide masks. The reason is believed to be that by-products from organic resist masks affect etching reactions between oxide underlayers and etchants. Accordingly, in order to improve size precision of the etching process by taking advantage of organic resist masks, it is required to increase the selectivity of silicon material layers to oxide underlayers.
A gas mixture in which oxygen gas is added to halide gas can be used as an etchant in order to improve selectivity of silicon material layers to oxide underlayers when organic resist masks are used as described above. However, additive oxygen gas reduces etching selectivity of silicon material layers to organic resist masks. Furthermore, additive oxygen gas increases deposits on sidewalls of organic resist masks, resulting in degradation of size precision.
In the case where an amount of additive oxygen gas in minimized in order to prevent degrading size precision, selectivity of silicon material layers to oxide underlayers remains insufficient. Increasing the amount of additive oxygen gas degrades size precision. Accordingly, there is a trade-off between size precision and selectivity.
Desorption products (silicon halide) which are produced in plasma etching of the polycrystalline silicon film 314 react with oxygen in the plasma at solid surfaces of the substrate 300. These reactions produce dissociated halogen radicals an silicon oxides. The silicon oxides are deposited on the surface of the polycrystalline silicon film 314 other than the portion where the polycrystalline silicon film 314 is bombarded by ions. More specifically, as shown in FIG. 2B, the plasma-produced silicon oxides are deposited on sidewalls 313a of the organic resist meek 313 so as to form banking deposits 317.
The banking deposits 317 serve as an-additional mask to the organic resist mask 313 beyond the original mask pattern of the organic resist mask 313. This causes an insufficient etching of the polycrystalline silicon film 314 beneath the banking deposits 317. As a result, as shown in FIG. 2C, a pattern (profile) of the etched polycrystalline silicon film 314b is shifted from the original pattern of organic resist mask 313, so that the size precision is significantly degraded. Since the influence of banking deposits depend on the resist pattern, patterns is more significant than that of dense resist patterns. This causes line width variations in line patterns. In addition, in the case of bromine-based etchants, deposit amounts of silicon oxide are increased by reactions between silicon bromide and oxygen, since the bond energy of bromine to silicon is lower than that of oxygen.
In order to solve such problems, an amount of oxygen gas may be increased in an additive etching step which is performed after the etching step of silicon material is substantially finished and an oxide underlayer is exposed. Alternatively, oxygen gas may be introduced in the additive etching step. However, practically, deciding a timing for changing the oxygen gas flow rate is difficult. Increasing or adding oxygen gas in the additive etching step causes deviations in resultant patterns of the silicon material layer.
However, high density plasma causes the following problems. Electron build-up in surfaces of the substrates is necessarily increased. Local differences in accumulated electric charge causes insulation breakdown in oxide underlayers. Notches are formed on surfaces of silicon material layers in the etching. In the case where organic resist masks are used, etching-produced by-products including carbon are recombined and polymerized in the plasma and deposited on surfaces of the substrates. In addition, since the dissociation of etching-produced silicon halide is further enhanced in the high density plasma, deposits of silicon oxide on substrates and resist masks are increased. This degrades the size precision as described above. Furthermore, controlling etch rates becomes difficult due to increasing dissociation and deposit reactions.
Measurements of the etch rates or thicknesses of layers or firms by optical observations or by SEM observations of cross-sections of sample wafers have been used as conventional methods for diagnosing plasma conditions. However, these methods are not only time and labor consuming as described above, but also are subject to influences of the previous fabrication steps. For example, problems in a heating process performed in the step of forming a silicon material layer cause changes in etch rates and etched shapes of the layer, even if the etching apparatus operates normally to provide optimum plasma conditions.
These changes in etch rates and etch shapes are usually considered to be a result of a malfunction of the etching apparatus. However, whether the cause of such changes is due to a malfunction of the etching apparatus or not cannot be diagnosed until the etch, rates or the film thickness are measured again using other wafers. Consequently, measurements of etch rates or film thicknesses are not good indices which exactly represent plasma conditions and operation conditions of the etching apparatus, since these measurements change depending upon not only plasma conditions but also wafer conditions.
In the plasma etching apparatus 200, the plasma condition is also controlled by changing current values of the solenoid coils 205 so as to change the magnetic field 206. However, optimum current values of the solenoid coils 205 to realize the optimum plasma condition are varied depending on many factors such as the kinds of etch gases, gas pressures for discharge, the power of the input microwaves, kinds of silicon material to be etched, shapes and sizes of the solenoid coils 205 and reaction chamber 215, and the like. Accordingly, it is required to set electric current values of the solenoid coil 205 for each combination of factors. This makes it difficult to effectively control the plasma condition.
As described above, conventional methods for controlling process parameters to realize the optimum plasma conditions for high selectivity and to estimate an actual selectivity from the current plasma condition in the etching apparatus have many practical problems.
SUMMARY OF THE INVENTION The dry etching method of the present invention is a method for etching silicon material layers formed on oxide underlayers by using plasma of a gas mixture including halogen and oxygen. The method includes the steps of: measuring intensities of a first emissions from the plasma at a first wavelength and a second emissions from the plasma at a second wavelength: obtaining a ratio of the intensity of the first emissions to that of the second emissions; measuring selectivity of silicon material layers to oxide underlayers for a condition of the plasma for which the emission intensity ratio is obtained; obtaining a correlation between the emission intensity ratio and the selectivity; and setting a plasma condition for a desired selectivity based on a measured emission intensity ratio by using the correlation. In one embodiment of the invention, in the step of measuring intensities, emissions from oxygen radicals and emissions from halogen radicals are measured as the first and second emissions, respectively. Preferably, the gas mixture includes at least one of bromine and chlorine as the halogen.
In the step of measuring intensities, emissions from transitions between excited quintet states of oxygen radicals and emissions from transitions between exited triplet states of oxygen radicals may measured as the first and second emissions, respectively.
The dry etching method of the present invention is a method for etching silicon material layers formed on oxide underlayers by using organic resist masks in plasma of a gas mixture including halogen and oxygen. The method includes the steps of: measuring intensities of a first emissions from the plasma at a first wavelength and a second emissions from the plasma at a second wavelength; obtaining a ratio of the intensity of the first emissions to that of the second emissions; end controlling a condition of the plasma based on the emission intensity ratio.
In one embodiment of the invention, in the step of measuring intensities, emissions from oxygen radicals and emissions from halogen radicals are measured as the first and second emissions, respectively. Preferably, the gas mixture includes at least one of bromine and chlorine as the halogen. In the step of measuring intensities, emissions from oxygen radicals at a wavelength of 777 nm and emissions from bromine radicals at a wavelength of 780 nm may be measured.
In the step of measuring intensities, emissions from oxygen radicals at a wavelength of 777 nm and emissions from chlorine radicals at a wavelength of 805 nm may be measured.
In the step of measuring intensities, emissions from transitions between excited quintet states of oxygen radicals and emissions from transitions between excited triplet states of oxygen radicals may be measured an the first and second emissions, respectively.
In another embodiment of the present invention, the step of measuring intensities includes the steps of: condensing emissions from the plasma: separating first and second light from the condensed emissions according to the first and second wavelengths; and measuring respective intensities of the first and second light.
Preferably, in the step of controlling a condition of the plasma, the at least one of process parameters is adjusted so as to increase the emission intensity ratio.
The dry etching apparatus of the present invention is an apparatus for etching silicon material layers formed on oxide underlayers by using organic resist masks in plasma of a gas mixture including halogen and oxygen. The apparatus includes: a chamber in which the plasma is generated; a section for introducing microwaves into the chamber; a unit for generating a magnetic field in the chamber; a system for measuring intensities of a first emissions from the plasma at a first wavelength and a second emissions from the plasma at a second wavelength; a unit for obtaining a ratio of the intensity of the first emissions to that of the second emissions; and a system for controlling a condition of the plasma based on the emission intensity ratio.
Preferably, the system for measuring intensities measures emissions from oxygen radicals and emissions from halogen radicals as the first and second emissions, respectively. Preferably, the gas mixture includes at least one of bromine and chlorine as the halogen.
The system for measuring intensities may measure emissions from oxygen radicals at a wavelength of 777 nm and emissions from bromine radicals at a wavelength of 780 nm.
In one embodiment of the present invention, the system for measuring intensities includes; a unit for condensing emissions from the plasma; a unit for separating first and second light from the condensed emissions according to the first and second wavelengths; and a unit for measuring respective intensities of the first and second light.
Preferably, in the step of measuring intensities, emissions from oxygen radicals and emissions from halogen radicals are measured as the first and second emissions, respectively. Preferably, the gas mixture includes at least one of bromine and chlorine as the halogen.
In one embodiment of the present invention, in the step of generating a magnetic field, the magnetic field is generated so that a resonance region having an intensity of electron cyclotron resonance is formed between the first and second regions, the first region having an intensity stronger then that of the resonance region, and the second region having an intensity weaker than that of the resonance region.
The dry etching apparatus of the present invention is an apparatus for etching silicon material layers formed on oxide underlayers by using plasma of a gas mixture including halogen and oxygen. The apparatus includes: a chamber in which the plasma is generated; a section for introducing microwaves into the chamber; a unit for generating a magnetic field in the chamber; a first gas inlet for introducing oxygen gas into a first region of the magnetic field; and a second gas inlet for introducing halogen/halide gas into a second region of the magnetic field which is different from the first region, The oxygen gas is excited in the first region into plasma having an energy level higher than that of plasma of halogen/halide gas excited in the second region.
Thus, the present invention described herein makes possible the advantages of (1) providing a dry etching apparatus and method for efficiently measuring and estimating selectivity which is obtained in a plasma condition and for controlling the plasma condition so as to realize optimum etching, (2) providing a dry etching apparatus and method in which selectivity of silicon material layers to oxide underlayers and selectivity of silicon material layers to resist masks are both improved, and in which damage to oxide underlayers is lowered, (3) providing a dry etching apparatus and method for realizing high size precision by reducing size variations in the etching, and (4) providing a method for diagnosing a plasma condition in the etching process and for diagnosing operation malfunctions of a dry etching apparatus.
FIG. 6 is a diagram illustrating the relationship between the selectivity and the ratio of emission intensities (oxygen/chlorine) obtained by using a helicon etcher.
FIG. 3 schematically shows a cross-sectional view of an ECR plasma etching apparatus 110 according to one example of the present invention. As shown in FIG. 3, the ECR plasma etching apparatus 110 includes a magnetron 1 for generating microwaves at 2.45 GHz, for example, a waveguide 2 for transferring the microwaves into a vacuum chamber 3 in which the plasma is generated, solenoid coils 5 provided around the vacuum chamber 3 for generating a magnetic field in the vacuum chamber 3, and a reaction chamber 9 in which etching processes are performed. The solenoid coils 5 generate the magnetic field so that the magnetic field satisfies the ECR condition.
The plasma gas which is ECR-excited in the vacuum chamber 3 is transported to a reaction chamber 9 along the magnetic flux of the magnetic field generated by the solenoid coils 5. A wafer platen electrode 10 for holding a wafer B to be etched is provided in the reaction chamber 9. The wafer platen electrode 10 is connected to a high frequency power supply 11 for supplying a high frequency bias voltage. The reaction chamber 9 is provided with a gas exhaust 12 to which is coupled a vacuum exhaust system such as a turbo molecular pump having a large exhaust rate.
In this example, polycrystalline silicon layers are etched being organic resist masks by an etchant gas mixture of hydrogen bromide, chlorine, and oxygen. The emission intensity ratio of oxygen radicals to bromine radicals is measured by varying process parameters of the ECR plasma etching apparatus 110 such as pressure, magnetic field, RF power from the high frequency power supply 11, power of the microwaves from the magnetron 1, gas flow rate, mixture ratio of the gas mixture, and the like. In order to obtain the intensity ratio (O/Br), respective intensity peaks of emissions having a wavelength of 777 nm (oxygen radical) and emissions having a wavelength of 780 nm (bromine radicals) are measured.
FIG. 4 shows exemplary results of such measurements. In FIG. 4, the ordinate denotes the selectivity of polycrystalline silicon layers to oxide underlayers, and the abscissa denotes the emission intensity ratio of oxygen radicals to bromine radicals (O/Br). The selectivity is obtained by measuring etch rates using respective wafers for polycrystalline silicon layers and silicon oxide layers, by varying process parameters.
In this example, measurements of the selectivity of etching polycrystalline silicon as silicon material was explained, though, the selectivity of amorphous silicon and monocrystalline silicon is also measured in the same way. In the case where silicon material is doped with impurities, though the exact values of selectivity are different, similar correlation is obtained.
In this example, the wavelengths of 777 nm and 780 nm are used for measuring the emission intensity of oxygen radicals and bromine radicals, respectively. These two wavelengths have the following advantages: Emissions having these wavelengths are relatively immune to noise from emissions of other wavelengths, and can be detected at the same time by an emission spectrometer using a CCD since the wavelengths are close. However, wavelengths for such measurements are not limited to these two. Any wavelengths of emissions from oxygen radicals and bromine radicals can be chosen. For example, in the case where emission intensities are measured by devices using filters, it is preferable to use two wavelengths which are much different from each other, such as wavelengths of 777 nm from oxygen radicals and 808 nm from chlorine radicals.
In FIG. 5, the ordinate denotes critical dimension lose as the process etch bias. The critical dimension loss is obtained by measuring linewidths of organic resist masks before the etching and linewidths of patterned polycrystalline silicon films after the organic resist masks are stripped, by using a measuring SEM. The critical dimension loss is expressed by the difference between the measured linewidths before and after the etching. The abscissa denotes the emission intensity ratio (O/Br) obtained under each etching condition (set of process parameters).
As shown in FIG. 5, the process etch bias (critical dimension loss) is minimized to almost zero when the emission intensity ratio (O/Br) is greater than a certain value. The process etch bias is caused mainly by banking deposits on sidewalls of resist masks during the etching process. Accordingly, by controlling the plasma condition to increase the emission intensity ratio higher then a certain value, the sidewall deposits can be prevented. That is, problems due to the sidewall deposits of the resist masks such as linewidth variation, which depends on line density of patterns, can be avoided by controlling the plasma condition to increase the emission intensity.
Next, an application of the method of measuring and estimating selectivity of the present invention to a conventional helicon etcher will be described. Measurements of etch rates are performed by using respective wafers for polycrystalline silicon and silicon oxide and by varying process parameters. The wafers are prepared in the same manner as those for the ECR plasma etching apparatus 110, as described above. In this case, respective intensities of the emissions having a wavelength of 777 nm and the emissions having a wavelength of 808 nm are measured by using an emission spectrometer utilizing filters, so as to obtain the emission intensity ratio. Chlorine gas is used as a halogen gas etchant. In the helicon etcher, variable process parameters are gas pressure and power of the helicon waves.
FIG. 6 shows results of the measurements using the helicon etcher. In FIG. 6, the ordinate denotes the selectivity of polycrystalline silicon layers to oxide underlayers, and the abscissa denotes the emission intensity ratio of oxygen radicals to chlorine radicals (O/Cl). In FIG. 6. circles (◯) represent results obtained by varying gas pressure, and solid circles () represent results obtained by varying power of the helicon waves.
As shown in FIGS. 7A and 7B, the optical system is coupled to a window 13 provided the a vacuum chamber 3. The optical system 20 includes a plurality of optical units 20a such as condensing lenses and optical waveguides 20b such as optical fibers. The optical units 20a are provided at the plurality of positions of the window 13 so as to detect emissions from different regions of the plasma in the vacuum chamber 3.
Preferably, the optical units 20a are placed so as to cover all areas of a wafer stage 10 where a wafer 8 is loaded.
Each of the optical units 20a detects emissions from the corresponding region of the plasma, and the corresponding optical waveguide 20b transmits light of the emissions to an emission spectrometer 21. By using the emission spectrometer 21, intensities of the emissions having predetermined wavelengths, for example, emissions from oxygen radicals and those from halogen radicals, are measured for each region of the plasma corresponding to the respective optical unit 20a. Thus, the emission intensity ration are obtained for a plurality of regions of the plasma. The uniformity of the plasma is evaluated by comparing the emission intensity ratios over the regions.
The intensities of the emissions themselves cannot exactly represent plasma conditions such as the uniformity of the plasma since an absolute value of the emission intensity depends on a shape of the plasma, a measurement distance from a optical unit, and the like. However, a relative intensity, i.e., the ratio of intensities of two emissions having different wavelengths, can represent relatively exact conditions because influences of shape, distance and the like can be off set by using the ratio. Accordingly, as shown in FIG. 8, uniformity of the plasma can be evaluated with sufficient accuracy by measuring the emission intensity ratio.
According to this example of the present invention, selectivity and uniformity of the plasma can be measured prior to etching target wafers. In addition, according to this example of the present invention, the emission intensity ratio can be monitored during the etching. If the emission intensity ratio is drops below a predetermined value as determined by the above mentioned method, a process parameter is adjusted such as pressure, RF power, power of microwaves, etc, so as to hold the emission intensity ratio (i.e., the corresponding selectivity) of the plasma at the predefined value. Controlling plasma conditions will be discussed in detail in the following examples.
The solenoid coils 105 are usually divided into at least two coils in order to increase uniformity of the plasma and controllability of the plasma. An ammeter 108 is connected to the solenoid coils 105 so as to detect the electric currents of the solenoid coils 105. A control circuit 123 is also connected to the solenoid coils 105. The control circuit 123 varies independently the electric current values of the respective coils of the solenoid coils 105 so as to change a position of an ECR region having a magnetic field intensity of 875 Gauss and gradient of the magnetic field 106, whereby efficiency of the microwave power and density distribution of the plasma 107 are changed.
A directional coupler 109 and stub pins 113 are provided in the waveguide 102. The directional coupler 109 detects incident wave and reflected wave of the microwaves traveling through the waveguide 102. Intensities of the detected incident wave and reflected wave are indicated by power meters 110 and 111, respectively. The stub pins 113 are connected to the control circuit 123.
A wafer platen electrode (wafer stage) 116 for loading a wafer 114 to be etched is provided in the reaction chamber 115. The wafer platen electrode 116 is connected to a high frequency power supply 117 and is supplied with a high frequency bias voltage. The reaction chamber 115 is provided with a gas exhaust 119 to which a vacuum exhaust system (not shown) such as a turbo molecular pump having a large exhaust rate is coupled.
FIG. 10 shows the relationship between selectivity and emission intensity ratio of hydrogen radicals to bromine radicals (O/Br). The electric current values of upper and lower coils of the solenoid coils 106 are varied as variable process parameters so as to change the magnetic field 105 in the vacuum chamber 104. Other process parameters are set as follows: oxygen gas flow of 4 sccm; hydrogen bromide gas flow of 24 sccm; chlorine gas low of 12 sccm, input power of microwaves of 1100 W; electric discharge pressure of 0.2 Pa; power of high frequency bias of 20 W: and temperature of wafers of 20� C.
As shown in FIG. 10, the electric current values of the upper and lower coils are varied from 24.5 A and 2.5 A, respectively (24.5 A/2.5 A: denoted by "a"), to 13 A and 12.5 A, respectively (13A/12.5 A: denoted by "k"). Hereinafter, the electric current values of the solenoid coils 105 are expressed in the same way. FIG. 10 shows results obtained by plotting each selectivity with respect to the corresponding emission intensity ratio (O/Br), varying the electric current of the solenoid coils 105 from "a" to "k". The emission intensity ratio (O/Br) is measured by using emissions at a wavelength of 777 nm (oxygen radical) and emissions at a wavelength of 780 nm (bromine radicals). The selectivity is the ratio of an etch rate of polycrystalline silicon layers to that of silicon oxide underlayer.
FIGS. 11A and 11B show results of an etching process in which the magnetic field is controlled by adjusting the electric current values of the upper and lower coils of the solenoid coils 105 from previous values of 15 A and 10 A, respectively, to adjusted values of 16A and 10 A, respectively, so that the emission intensity ratio (O/Br) is increased. The emission intensity ratio (O/Br) is obtained by measuring the emissions at wavelengths of 777 nm and 780 nm. In this case, the selectivity is improved significantly from 75 to 145 by this adjustment of the electric currents, as shown in FIG. 11B.
The selectivity of polycrystalline silicon to silicon oxide is improved as shown in FIG. 12B. The etch rate variation across the wafer is reduced from about 11.5% to about 3%, as shown in FIG. 12C. This means that the uniformity of the plasma in significantly improved. The reason is presumed to be that increasing the emission intensity ratio maximizes the plasma density by reducing absorption losses of the plasma which is energy losses in transforming the electromagnetic energy into the plasma energy and which are shown as flickers in the plasma.
FIG. 21 schematically shows an example of controlling the plasma condition. The control circuit 123 determines an emission intensity ratio ε1/ε2 of the current plasma condition from emissions at predetermined wavelengths. Specifically, emissions at first and second wavelengths from the plasma 107 are detected in order to measure the emission intensities ε1 and ε2, respectively, via the optical system 131, the emission spectrometer 121, and the area sensor 122, as described above (step S10).
In the case where the required selectivity is not obtained in the current plasma condition (i.e., ε1/ε2 is not greater than ε0 in step S11), one process parameter is selected from the variable process parameters for controlling the current plasma condition (step S12). The process parameter may be selected by an operator observing the monitor unit 127 or automatically selected using a CPU in the control circuit 123, which is specifically programmed to perform such selection based on the correlations associated with the memory unit 125.
Then, steps S10 and S11 are performed again. If the desired emission intensity ratio is not yet obtained, steps S12 and S13 are performed. In this case, in step S12, the same process parameter as that of the previous adjustment may be selected, or another process parameter may be selected among the variable process parameters. If in stop S11 it is determined that ε1/ε2 is greater than ε0, the adjustment operation ends. However, the same operation shown in FIG. 21 may be repeated periodically as will be appreciated.
As described above; according to the present invention, the number of variable process parameter is not limited to one, but a plurality of process parameters can be used in order to control the plasma condition.
In this example, the wavelength of 777 nm (oxygen radicals) is used as a first wavelength, and the wavelength of 780 nm or 808 nm (halogen radicals) is used as a second wavelength, in order to obtain the emission intensity ratio. Intensities of emissions having these wavelengths are close, so that the etching can be controlled by using these wavelengths more stably than by using other wavelengths. In addition, a relatively small difference between the first and second wavelengths minimizes the wavelength dependency of the measurement, which is influenced by dirt of the window 124. However, the wavelengths to be measured are not limited to these, but any wavelengths specifying oxygen radicals and halogen radicals may be used.
In the plasma etching apparatus 130, silicon material layers formed on oxide underlayers (silicon oxide) are etched using organic resist masks in plasma of a gas mixture including halogen and/or halide gas and oxygen gas. In this example, a gas mixture including hydrogen bromide and chlorine is used as halogen/halide gas.
In this example, emissions at a wavelength of 777 nm which are emitted by transitions between excited quintet states of oxygen radicals and emissions at a wavelength of 844 nm which are emitted by transitions between excited triplet states of oxygen radicals are measured so as to obtain the emission intensity ratio. Oxygen radicals in excited quintet states are at an energy range different from those in exited triplet states. Thus, the emission intensity ratio of excited quintet states to excited triplet states (777 nm/844 nm) is presumably represents reactivity of oxygen radicals in the plasma.
Selectivity and the emission intensity ratio (777 nm/844 nm) are measured for various plasma conditions by varying process parameters in the plasma etching apparatus 130. FIG. 13 shows results of the measurements. In FIG. 13, the ordinate denotes the selectivity of polycrystalline silicon layers to oxide underlayers, and the abscissa denotes the emission intensity ratio (777 nm/844 nm) of oxygen radicals. In FIG. 13, solid circles () represent results obtained by varying the pressure for electric discharge, squares (▪) represent results obtained by varying power of the microwaves, and triangles and diamonds (▴, ♦) represent results obtained by varying electric current values of the solenoid coils 105.
FIG. 14 shows results of measurements of the selectivity of polycrystalline silicon layers to organic resist masks. In FIG. 14, the ordinate denotes the selectivity of polycrystalline silicon layers to organic resist masks, and the abscissa denotes the emission intensity ratio (777 nm/844 nm) of oxygen radicals. Variable process parameters are the same as those shown in FIG. 13.
Process etch biases such as linewidth variations are also reduced by controlling the process parameters so as to increase the emission intensity ratio (777 nm/844 nm). FIG. 15 shows results which are obtained by etching polycrystalline silicon layers using organic resist masks into line electrodes having a linewidth of 0.25 μm through photolithography processes. In FIG. 15, the ordinate denotes critical dimension loss as the process etch bias, and the abscissa demotes the emission intensity ratio (777 nm/844 nm). Electric current values of the solenoid coils are used as variable process parameters. As shown in FIG. 15, the process etch bias (critical dimension loss) is reduced by controlling the process parameters so as to increase the emission intensity ratio (777 nm/844 nm). This is because sidewall deposits on organic resist masks are reduced, as described above in Example 1.
As described above, by controlling the process parameters so as to increase the emission intensity ratio (777 nm/844 nm), both the selectivity of polycrystalline silicon layers to oxide underlayers and the selectivity of polycrystalline silicon layers to organic resist masks can be increased. Furthermore, the process etch bias (critical dimension lose) is also reduced and the size precision is improved by controlling the process parameters so as to increase the emission intensity ratio (777 nm/844 nm).
The emission intensity ratio (777 nm/844 nm) is increased in the cases where: gas pressure of the electric discharge of the plasma etching apparatus is increased; input power of the microwaves is increased; and electric current values of the solenoid coils are adjusted so that a position of the ECR region (875 gauss) of the magnetic field is placed close to the wafers, or so that a gradient of the magnetic field in vicinity of the ECR region is minimized.
Wavelengths of emissions to be measured are not limited to those of 777 nm and 844 nm. Since oxygen radicals have a plurality of excited quintet states and triplet stats, respectively, other wavelengths also can be used in order to obtain the emission intensity ratio. For example, emissions having a wavelength of 395 nm from oxygen radicals in excited quintet states and emissions having wavelength of 437 nm from oxygen radicals in excited triplet states can also be used to obtain the emission intensity ratio, though the wavelengths of 777 run and 844 nm provide more accurate controlling of the etching condition.
FIG. 16 shows results of the measurements. In FIG. 16, the ordinate denotes the selectivity of polycrystalline silicon layers to oxide underlayers, and the abscissa denotes the emission intensity ratio (588 nm/844 nm) of oxygen ions to oxygen radicals. In FIG. 16, solid circles () represent results obtained by varying a pressure for electric discharge, squares (▪) represent results obtained by varying a power of the microwaves, and triangles and diamonds (▴, ♦) represent results obtained by varying electric current values of the solenoid coils 105.
FIG. 17 shows results of measurements of the selectivity of polycrystalline silicon layers to organic resist masks. In FIG. 17, the ordinate denotes the selectivity of polycrystalline silicon layers to organic resist masks, and the abscissa denotes the emission intensity ratio (588 nm/844 nm) of oxygen ions to oxygen radicals. Variable process parameters are the same as those shown in FIG. 16.
As shown in FIG. 17, the selectivity and the emission intensity ratio (588 nm/844 nm) exhibit a positive correlation. The selectivity of polycrystalline silicon layers to organic resist masks can be increased by controlling the process parameters so as to increase the emission intensity ratio (588 nm/544 nm).
Process etch biases such as linewidth variations are also reduced by controlling the process parameters so as to increase the emission intensity ratio (588 nm/844 nm). FIG. 15 shows results which are obtained by etching polycrystalline silicon layers using organic resist masks into line electrodes having a linewidth of 0.25 μm through photolithography processes. In FIG. 18 the ordinate denotes critical dimension loss as the process etch bias, and the abscissa denotes the emission intensity ratio (588 nm/844 nm). Electric current values of the solenoid coils and an input power of the microwaves are used as variable process parameters. As shown in FIG. 18, the process etch bias (critical dimension loss) is reduced by controlling the process parameters so as to increase the emission intensity ratio (588 nm/844 nm).
In Example 2 and Example 3, as halogen gasses in the gas mixture, hydrogen bromide and chlorine are used. However, the present invention is not limited to this. Either one of hydrogen bromide or chlorine can be used as a single halogen gas in the gas mixture. Silicon material layers to be etched are not limited to those made of polycrystalline silicon without impurities. The present invention can be applied to the etching of silicon material layers made of polycrystalline silicon doped with impurities, monocrystalline silicon, and amorphous silicon. In addition; oxide underlayers (gate insulating films) are not limited to silicon oxide layers. Oxide underlayers may be made of silicon nitride oxide including nitrogen.
EXAMPLE 4 Next, a method for diagnosing a function of plasma etching apparatuses and a method for estimating selectivity in an actual etching process in fabrication of semiconductor devices will be described. In general, plasma is first generated by electric discharge in a vacuum chamber in a plasma etching apparatus. Prior to etching target wafers, the plasma is generated with dummy wafers placed on a wafer stage in a reaction chamber so emission intensity ratio of the plasma during the etching of the dummy wafers, as described above in Examples 1 to 3, selectivity obtained in the current plasma condition in the etching apparatus can be estimated.
For example, malfunctions of the plasma etching apparatus such as a degradation in the exhaust rats of a vacuum pump, inefficiency of a magnetron generating microwaves, a poor performance of a mass-flow controller, and the like, change the electric discharge and the plasma condition. Changes in the plasma condition cause variation in the emission intensity ratio. Thus, by comparing the measured value of emission intensity ratio to the normal values thereof, the plasma etching apparatus can be diagnosed so as to detect malfunctions, if any. By measuring the emission intensity ratio without performing a specific etching process, malfunctions of the plasma etching apparatus itself can be detected avoiding influences from material of the wafers or masks.
By using the plasma etching apparatus and method of the present invention described above in Examples 2 and 3, the emission intensity ratio can be measured during etching processes of target wafers. Therefore, plasma conditions and functions of the plasma etching apparatus can be monitored during etching processes, as well as estimation of selectivity and detection of malfunction prior to the etching. The plasma etching apparatus of the present invention can also serve as a detector of plasma condition and operation function, and an auto-tuner for optimizing the plasma condition so as to, for example, realize a high selectivity.
In this example, relative density of oxygen radicals to halogen radicals is increased without the changing flow rate of a process gas (gas mixture) or ratio of component gases of the process gas. The applicants have found that selectivity of silicon material layers to oxide underlayers is improved by increasing the relative density of oxygen radicals to halogen radicals in the plasma, not by increasing flow rate of oxygen gas. More specifically, the relative density of oxygen radicals is significantly increased in high density plasma having density more then 1010 /cm3. The reason why is presumed that high density plasma is required to enhance dissociation and excitation of oxygen gas which has a high dissociation energy, while halogen and halide gases having a relatively low dissociation energy are well dissociated and excited in a relatively low density plasma of a density about 109 /cm3.
On the other hand, halogen/halide gas is introduced via another gas inlet into a second region of the magnetic field having a lower intensity in the vacuum chamber close to wafers in a reaction camber. The halogen/halide gas is dissociated and excited in the second region of the magnetic field by free electrons in the plasma which is transported from the first region. During transportation, plasma density is lowered by recombination reactions and the like. The halogen/halide gas is sufficiently dissociated and excited in the plasma of a relatively low density (109 /cm3 to 1010 /cm3), since the dissociation energy of halogen/halide gas is smaller than that of oxygen gas. Thus, the etch rate is not decreased by introducing the halogen/halide gas into the second region of a weaker magnetic field.
A specific example is now described below. FIG. 19 schematically shows a cross-sectional view of an ECR plasma etching apparatus 140 of this example according to the present invention. Units of the ECR plasma etching apparatus 140 corresponding to those of the ECR plasma etching apparatus 110 described in Example 1 are denoted by the same numerical numbers. Although not shown in FIG. 19, the ECR plasma etching apparatus 140 includes a control system for controlling plasma conditions via process parameters, such as that of the ECR plasma etching apparatus 130 shown in FIG. 9. The relative density of oxygen radicals to halogen radicals can be estimated, for example, by measuring an emission intensity ratio of the oxygen radicals to halogen radicals in the same manner as discussed above in Examples 1-3.
As shown in FIG. 19, the first gas inlet 6 is placed so as to introduce a first gas into the first region B1 of the magnetic field in the vacuum chamber 3, while the second gas inlet 7 is placed so as to introduce a second gas into the second region B2 of the magnetic field. Thus, the first gas, which is introduced into the region a, via the first gas inlet 6, is dissociated and excited by the strong magnetic field in the region B1 and then in the resonance region Br, so as to form high density plasma. The plasma is transported along the magnetic flux toward the reaction chamber 9 to the weaker magnetic field in the region B2. The second gas, which is introduced into the region B2 via the second gas inlet 7, is dissociated and excited by free electrons in the transported plasma having a lower density.
As show in FIG. 20B, banking deposits 18, which are by-products of silicon oxide produced in the etching reactions, are formed on sidewalls of organic resist mask 17b during the etching process. Nevertheless, the banking deposits 18 is sufficiently thin so that they do not affect the mask pattern of the organic resist musk 17b. As shown in FIG. 20C, the processed polycrystalline silicon layer 14d has a pattern substantially in accordance with the original mask pattern of the organic resist mask 17. For example, in, the case of line patterns of linewidth 0.2 μm to 0.5 μm, the linewidth variations of the processed polycrystalline silicon layer 14d are reduced within about 10%, with respect to both of high line-density (for example, linewidth:space=1:1) patterns and isolated line patterns.
In this example, oxygen gas is used as the first as introduced via the first gas inlet 6. The first gas is not limited to pure oxygen gas, but a gas mixture of oxygen gas and an inert gas such as helium may be used. In this case, stability of the electric discharge in the vacuum chamber 3 and uniformity of the plasma can be further improved.
In order to increase the selectivity so as to reduce the process etch variation, it is preferable to realize a higher relative density of oxygen radicals to halogen radicals in the reaction chamber 9. The plasma having a high density in the resonance region Br of the magnetic field increases the relative density of oxygen radicals. Thus, process parameters are controlled so as to increase the plasma density in the resonance region Br, for example, by increasing an input power of the microwaves from 900 W to 1200 W, and/or by reducing a gas pressure to 0.3 Pa to 0.07 Pa.
As described above, according to the present invention, by measuring emissions from the plasma having two different wavelengths so as to obtain the emission intensity ratio thereof, the plasma condition is controlled based on the emission intensity ratio which is associated with selectivity. By adjusting process parameters of the plasma etching apparatus so as to increase the emission intensity ratio, the plasma condition can be optimized in which the selectivity of silicon material layers to oxide underlayers and the selectivity of silicon material layers to organic resist masks are both improved; sufficient size precision in realized by reducing amount of banking deposits on sidewalls of the organic resist masks during the etching; and uniformity of the etch rate over a surface of the wafer.
By using the emission intensity ratio rather than the emission intensity itself, accurate control of the plasma condition is realized since the emission intensity ratio it sufficiently free from influences of shape of the plasma, detecting position of the plasma and distance from an optical system for detecting emissions, dirt of the window through which emissions are detected, and the like. Therefore, reliable plasma etching can be performed by controlling the plasma based on the emission intensity ratio.
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Patent US8085804 - System and method for processing multiple broadcast multimedia streams - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsA computer-implemented method is disclosed including: receiving a broadcast signal containing a set of multiplexed multimedia channels; storing said multiplexed multimedia channels in a temporary storage buffer on a mass storage device; determining a point in said temporary storage buffer to begin demultiplexing...http://www.google.com/patents/US8085804?utm_source=gb-gplus-sharePatent US8085804 - System and method for processing multiple broadcast multimedia streamsAdvanced Patent SearchTry the new Google Patents, with machine-classified Google Scholar results, and Japanese and South Korean patents.Publication numberUS8085804 B2Publication typeGrantApplication numberUS 11/683,295Publication dateDec 27, 2011Filing dateMar 7, 2007Priority dateFeb 20, 2001Fee statusPaidAlso published asUS8675675, US20020116705, US20070147406, US20120096494, WO2002073966A2, WO2002073966A3Publication number11683295, 683295, US 8085804 B2, US 8085804B2, US-B2-8085804, US8085804 B2, US8085804B2InventorsStephen G. Perlman, Michael SleatorOriginal AssigneeArris Group, Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (116), Non-Patent Citations (8), Referenced by (2), Classifications (71), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetSystem and method for processing multiple broadcast multimedia streams
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No. 09/790,076, filed Feb. 20, 2001.2Office Action mailed Aug. 28, 2006 in U.S. Appl. No. 09/790,076, filed Feb. 20, 2001.3Office Action mailed Mar. 22, 2007 in U.S. Appl. No. 09/790,076, filed Feb. 20, 2001.4Office Action mailed Mar. 8, 2006 in U.S. Appl. No. 09/790,076, filed Feb. 20, 2001.5Office Action mailed Oct. 5, 2005 in U.S. Appl. No. 09/790,076, filed Feb. 20, 2001.6PCT International Search Report in PCT/US01/22002 filed Apr. 10, 2002.7PCT International Search Report in PCT/US01/22002 filed Feb. 14, 2002.8PCT International Search Report in PCT/US02/05206 filed Feb. 13, 2002.Referenced byCiting PatentFiling datePublication dateApplicantTitleUS8548067 *Jan 31, 2011Oct 1, 2013Goran IvkovicSingle sensor radio scene analysis for packet based radio signals using 2nd and 4th order statisticsUS20110188395 *Jan 31, 2011Aug 4, 2011Rutgers, The State University Of New JerseySingle Sensor Radio Scene Analysis for Packet Based Radio Signals using 2nd and 4th Order Statistics* Cited by examinerClassifications U.S. Classification370/429International ClassificationH04N9/804, H04N5/781, H04L12/54, H04N5/913, H04N5/783, H04N9/82, H04N7/16, H04N7/173, H04N7/167, H04N5/44, H04N21/84, H04N21/462, H04N21/454, H04N21/858, H04N21/434, H04N21/47, H04N21/45, H04N21/4405, H04N21/2347, H04N21/442, H04N21/845, H04N21/432, H04N21/4782, H04N21/4147Cooperative ClassificationH04N9/8205, H04N21/84, H04N21/4325, H04N9/8042, H04N21/8455, H04N5/781, H04N21/4405, H04N5/76, H04N7/165, H04N21/434, H04N5/783, H04N21/4532, H04N7/17318, H04N5/4401, H04N21/2347, H04N21/4622, H04N2005/91364, H04N5/913, H04N21/4147, H04N21/4782, H04N21/454, H04N21/8586, H04N7/1675, H04N21/44222, H04N21/47European ClassificationH04N21/432P, H04N21/45M3, H04N5/76, H04N21/845P, H04N5/913, H04N21/84, H04N7/16E3, H04N5/44N, H04N21/4147, H04N21/2347, H04N9/82N, H04N9/804B, H04N21/4405, H04N21/454, H04N21/462S, H04N7/167D, H04N7/173B2, H04N21/858U, H04N21/442E2, H04N21/4782, H04N21/434Legal EventsDateCodeEventDescriptionJul 20, 2011ASAssignmentOwner name: ARRIS GROUP, INC., GEORGIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:DIGEO, INC AND VULCAN VENTURES, INC.;REEL/FRAME:026621/0258Effective date: 20090922Apr 16, 2013ASAssignmentOwner name: ARRIS ENTERPRISES, INC., GEORGIAFree format text: MERGER;ASSIGNOR:ARRIS GROUP, INC.;REEL/FRAME:030228/0349Effective date: 20130416May 28, 2013ASAssignmentOwner name: BANK OF AMERICA, N.A., AS ADMINISTRATIVE AGENT, ILFree format text: SECURITY AGREEMENT;ASSIGNORS:ARRIS GROUP, INC.;ARRIS ENTERPRISES, INC.;ARRIS SOLUTIONS, INC.;AND OTHERS;REEL/FRAME:030498/0023Effective date: 20130417Jun 29, 2015FPAYFee paymentYear of fee payment: 4RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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TOLKIEN - The Lord of The Rings - Guild Publishing (Deluxe HB) (1989) | eBay Skip to main contenteBayShop by categoryEnter your search keywordAll CategoriesAdvanced or register':' style="margin-right:3px">Hello -User-.'.replace(/-User-/,escape(a)))+"")}catch(b){document.write("")}})();Hello (Sign in to bid or buy)Daily DealsSellHelp & ContactMy eBayExpand My eBaySummaryBids/OffersWatch ListWish ListAll ListsPurchase HistorySellingMy CollectionsFollowed SearchesMessagesCollect & Spend Learn moreNotification Back to home page
Details about TOLKIEN - The Lord of The Rings - Guild Publishing (Deluxe HB) (1989)
TOLKIEN - The Lord of The Rings - Guild Publishing (Deluxe HB) (1989)
“Some slight foxing to the exposed top and side of pages.Other than that, this book is in excellent ”	... Read more	Ended:
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eBay item number:380813147707
09 Jan, 2014 17:24:32 GMT View all revisions
“Some slight foxing to the exposed top and side of pages.Other than that, this book is in excellent condition; clean crisp pages, no damage to hard-cover.”
TOLKIEN - The Lord of The Rings - Guild Publishing (Deluxe HB) (1989)This edition published 1981 by Guild PublishingReprinted 1988, 1989Some foxing to the exposed tedges of pages.Other than that, this book is in excellent condition; clean crisp pages, no damage to hard-cover.Dimensions: 21.8 x 14.5 x 5 cmPlease see my other listings for similar items.I offer a combined postage for multiple items.Any questions, please ask. :)On 09-Jan-14 at 11:20:54 GMT, seller added the following information:
On 09-Jan-14 at 16:27:15 GMT, seller added the following information:Click to view supersize imageClick to view supersize imageClick to view supersize imageClick to view supersize imageClick to view supersize imageClick to view supersize image

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Top 10 Hotels in Oxon Hill, Maryland | Hotels.comEnglish (United States)Book online or call 800-246-8357This call is free. 24 hours a day; 7 days a week.HotelsHotel DealsPackages & FlightsGroupsHotels.com® RewardsGift CardsCustomer ServiceYour bookingsHelpWebsite feedbackReview a hotelSign in & AccountSign inCreate an accountYour bookingsHotelsUnited States of America HotelsMaryland hotelsHotels in Oxon Hill, MarylandHotels in Oxon Hill, MarylandSearch & Compare Oxon Hill HotelsCity, landmark, hotel name, address or zip codeCheck inCheck out I don’t know my datesTraveling for:WorkLeisureRooms123456789+Room 1:Adults12345678Aged 18+Children01230-17Age at check in:Child 1:-?-<11234567891011121314151617Show dealsCollect 10 nights get 1 free*And look out for Secret Prices on select hotels12345678910=FREETrending now in Oxon HillMost bookedWashington PlazaExcellent 4.3 / 5( 3,120 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 454 people looked at this hotel in the last hourMost recent review"Friendly staff, great swimming pool, few blocks from McPherson Sq metro stop, comfy room. I would come back."C, Jul 2016, USThe Westin Washington, D.C. City CenterExcellent 4.1 / 5( 1,286 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 405 people looked at this hotel in the last hourMost recent review"Convenient location for the sights of Washington, very welcoming at reception when we arrived. Room clean, spacious & comfortable. The concierge on our last night was very helpful, when I couldn't complete online check in for one of our flights home, he let me use the computer in the lobby & prin..."A Traveller, Jul 2016, GBSheraton Pentagon City HotelExcellent 4.0 / 5( 1,978 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 368 people looked at this hotel in the last hourMost recent review"No refrigerator was inconvenient -pool way smaller than appeared on website, however, really fun that it was on the rooftop-really nice to have the shuttle drivers to get to the metro everyday-the location was top notch-DC view room was very nice-I would definitely recommend to others "A Traveller, Jul 2016, USHilton Alexandria Mark CenterExcellent 4.1 / 5( 1,126 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 335 people looked at this hotel in the last hourMost recent review"The room was perfect, spacious, had a home feeling, quiet and a just perfect relaxing feel.
I would recommend this hotel to anyone!!!!"d, Jul 2016, USEmbassy Suites Hotel Tysons CornerExcellent 4.4 / 5( 1,533 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 322 people looked at this hotel in the last hourMost recent review"close to metro, shopping, food, great area! would recommend"s, Jul 2016, USOmni Shoreham HotelExcellent 4.4 / 5( 2,035 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 313 people looked at this hotel in the last hourMost recent review"This is the hotel that the presidential inauguration balls are held. Join their simple rewards program and your internet is free- the staff was great from the bell hop, valet, reception, room service- I do suggest room service- nice portions and lovely set up. I wish we could have stayed longer "A Traveller, Jul 2016, USHyatt Regency Washington DCExcellent 4.3 / 5( 2,045 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 310 people looked at this hotel in the last hourMost recent review"Nice, comfortable - small crowded pool and expensive cafe but great waiters/waitress, and great hotel staff. Easy to get a taxi."A Traveller, Jul 2016, USThe Westin Crystal CityExcellent 4.4 / 5( 1,137 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 305 people looked at this hotel in the last hourMost recent review"After travelling to much nicer hotels in Las Vegas and various places around the globe, it's harder to be impressed by these "regular" 4-star hotels. I would say that this hotel is probably on the lower-end of a 4-star hotel. It does qualify for 4-stars, as it is definitely better than a 3-star h..."A Traveller, Jul 2016, USBest Western Plus Rockville Hotel & SuitesExcellent 4.0 / 5( 1,096 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 303 people looked at this hotel in the last hourMost recent review"I would not rate this hotel as anything better than fair"A Traveller, Jul 2016, USThe Westin Tysons CornerExcellent 4.3 / 5( 1,075 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 177 people looked at this hotel in the last hourMost recent review"Needed a hotel for my daughter's move to the area. Location could only be better by being on the opposite side of 495! Not used to having to pay for parking, and really didn't see a need for that charge given it was a weekend stay.
Would have appreciated a refrigerator in lieu of the empty mi..."A Traveller, Jul 2016, USSee more hotels in Oxon Hill, MarylandRecently bookedCrowne Plaza Old Town Alexandria3.5 starsfrom $90Kimpton Morrison House4 starsfrom $139Towne Motel Alexandria2.5 starsfrom $89Embassy Suites Hotel Alexandria Old Town3.5 starsfrom $129Red Roof PLUS Washington, DC - Oxon Hill2 starsfrom $85Pay now or later on most roomsFree cancellation on most roomsBest Price GuaranteeMap of Oxon Hill hotelsLandmarksNational HarborOxon Cove and Oxon Hill Farm National ParkCapital Children's MuseumNational Children's MuseumNeighborhoodsOxon HillHotel typesPool (5 hotels)Family-friendly (7 hotels)Best hotels in Oxon HillWith 10 hotels in Oxon Hill, there are several way you can use Hotels.com to find the perfect room.
Hampton Inn & Suites National Harbor - Alexandria Area The Westin Washington National Harbor Gaylord National Resort & Convention Center Wyndham Vacation Resorts at National Harbor AC Hotel by Marriott National Harbor Washington, D.C. Area The location of your Oxon Hill hotel is important. If you are traveling to Oxon Hill, &StateorCountry for business, you may want to consider getting a hotel close to the airport or near your meeting venue. By doing so, you can really cut down on transportation costs and time. You may also want to book a hotel that offers free wifi just in case you need to get some work done.
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Before you book, check out user reviews. Hotels.com has 2233 reviews in Oxon Hill. We show reviews from Expedia and TripAdvisor so you know that you are reading genuine, reliable reviews. Be sure to download the Hotels.com app so you can book your reservations on the go, view amenities, and save the hotels you want to view and compare later.Choose one of the following to unlock Secret Prices and pay less on select hotels.EmailSign up for our latest offersHotels.com appDownload the app and book on the goHotels.com® RewardsJoin now to collect 10 nights, get 1 free*Top DestinationsHotels in New York, New YorkHotels in Las Vegas, NevadaHotels in Chicago, IllinoisHotels in San Francisco, CaliforniaHotels in Washington, District of ColumbiaHotels in Boston, MassachusettsHotels in San Diego, CaliforniaHotels in Orlando, FloridaHotels in London, United KingdomHotels in New Orleans, LouisianaHotels in Los Angeles, CaliforniaHotels in San Antonio, TexasHotels in Paris, FranceHotels in Seattle, WashingtonHotels in Atlanta, GeorgiaHotels in Philadelphia, PennsylvaniaHotels in Austin, TexasHotels in Atlantic City, New JerseyHotels in Rome, ItalyHotels in Myrtle Beach, South CarolinaHotels in Dallas, TexasHotels in Houston, TexasHotels in Denver, ColoradoHotels in Miami, FloridaCustomer ServiceYour bookingsFAQsContact usWebsite feedbackReview a hotelFor Suppliers, Affiliates and the MediaAdd HotelAffiliate with usPrivate LabelPromote with UsTravel AgentsPress OfficeUser Terms and Privacy PolicyTerms & ConditionsPrivacy PolicyCookie PolicyAbout our adsAbout UsJobsTravel GuidesTop 50 CitiesAll countriesAll hotelsSite index© 2016 Hotels.com, L.P. All rights reserved.Hotels.com and the Hotels.com logo are trademarks or registered trademarks of Hotels.com, LP in the U.S. and/or other countries. All other trademarks are property of their respective owners.* Learn more about Hotels.com® RewardsABOUT SSL CERTIFICATES

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Rumbas Andaluzas | eBay Please enable JavaScript Our new search experience requires JavaScript to be enabled. Please enable JavaScript on your browser, then try again.
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Amazon.co.uk: Lists by L. Lockwood "lockwoodt1"
Content by L. Lockwood
Top Reviewer Ranking: 371,757
byL. Lockwood "lockwoodt1" (U.K)
doctor who 2009 dvd releases (12 May 2010)
 Doctor Who: The Next Doctor, 2008 Christmas Special [DVD] DVD ~ David Tennant (60)
 Doctor Who: The E-Space Trilogy (Full Circle / State of Decay / Warrior's Gate) [DVD] DVD ~ Tom Baker (56)
 Doctor Who: The Rescue & The Romans [DVD] DVD ~ William Hartnell (26)
See entire list 6th doctor stories in order (15 January 2010)
 Doctor Who - The Twin Dilemma [DVD] [1984] DVD ~ Colin Baker (44)
 Doctor Who - Attack of the Cybermen [DVD] [1985] DVD ~ Colin Baker (46)
 Doctor Who - Vengeance on Varos [DVD] [1985] DVD ~ Colin Baker (47)
See entire list the complete guide to the sontarans on dvd (29 December 2009)
 Doctor Who - The Time Warrior [DVD] DVD ~ Jon Pertwee (31)
 Doctor Who - The Sontaran Experiment [1975] [DVD] [1963] DVD ~ Tom Baker (31)
 Doctor Who - The Invasion of Time [DVD] DVD ~ Tom Baker (43)

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Loaded Jets will help each other in practice - New York - Scout
Loaded Jets will help each other in practiceCraig Thomas05/22/2010Talent will help in practice - "There is so much talent on the field This is going to get Mike Pettine a lot of flexibility in making calls. On offense, they're not going to get better than what they're facing. There's a lot of good receiving corps in this league, but when you put Jerricho out there with Santonio, Braylon, Dustin and LaDainian; I don't know if there is a better group than that." Share on Facebook Share on TwitterTrending on ScoutNFL to have greater access to underclassmenLuani won’t be charged, but is damage done?Cowboys Ex Greg Hardy Arrested On Drug ChargeTests Advance F-35 vs A-10-Close Air SupportJets claim TE Austin Seferian-JenkinsShare & EmbedGame Preview: Jets vs. Chiefs Full StoryJets Insider Top StoriesBreaking NewsJets claim TE Austin Seferian-JenkinsAccording to Ian Rapoport, the Jets have been awarded former Buccaneers tight end Austin Seferian-Jenkins on waivers.by Joe BaroneJets Insider2:05 PMLoss to Chiefs falls all on FitzpatrickThere were many reasons for the Jets embarrassing 24-3 loss to the Chiefs yesterday but none bigger than Ryan Fitzpatrickby Christopher NimbleyJets Insider10:10 AMBreaking NewsJets Fall to Chiefs 24-3Six Fitzpatrick interceptions doom Jets as they fall to 1-2 on the young season.by Giovanni AnnatelliJets InsiderYesterday at 4:24 PMBreaking NewsJets-Chiefs InactivesIs Brandon Marshall going today?by JetsInsider.com StaffJets InsiderYesterday at 12:07 PMGame Preview: Kansas City OffenseA little insight into the Kansas City offense.by Giovanni AnnatelliJets InsiderSaturday at 3:07 PMJets/KC Fantasy Impact: Start 'Em, Sit 'EmIf you have New York Jets or Kansas City Chiefs players on your fantasy football roster, here is who you should start and sit.by Joe BaroneJets InsiderFriday at 9:12 AMJets Injury UpdateSome familiar faces - three in particular - returned to practice on Friday which means good news for the Jets.by Joe BaroneJets InsiderFriday at 8:22 AMThree observations: September 22Three observations as the Jets prepare to face the Chiefsby Christopher NimbleyJets InsiderThursday at 1:11 PMRevis Still GreatDarrelle Revis is still a tremendous player who's worth shouldn't be underestimated.by Marcus ReynoldsJets InsiderThursday at 10:37 AMGame Preview: Jets vs. ChiefsBreaking down the matchup between the Jets and Chiefsby Joe BaroneJets InsiderTuesday at 10:20 AMJets add TE to RosterJets signed a TE to the roster today.by JetsInsider.com StaffJets InsiderFriday at 11:05 AMJets-Chiefs Injury Report (Thurs)Here is Thursday's Jets-Chiefs Injury Reportby JetsInsider.com StaffJets InsiderThursday at 6:50 PMLoad More

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