text: _.zk=function(){this.R=[];this.H=[]};_.Tia=function(a){_.Gb(a.R)&&(a.R=a.H,a.R.reverse(),a.H=[])};_.Dk=function(a){_.Tia(a);return a.R.pop()};_.h=_.zk.prototype;_.h.Ee=function(){return this.R.length+this.H.length};_.h.Ed=function(){return _.Gb(this.R)&&_.Gb(this.H)};_.h.clear=function(){this.R=[];this.H=[]};_.h.contains=function(a){return _.Fb(this.R,a)||_.Fb(this.H,a)};_.h.remove=function(a){var b=this.R;var c=(0,_.vb)(b,a);0<=c?(_.Ib(b,c),b=!0):b=!1;return b||_.Jb(this.H,a)}; _.h.Id=function(){for(var a=[],b=this.R.length-1;0<=b;--b)a.push(this.R[b]);for(var c=this.H.length,b=0;bJust when I think Community can't get anymore awesome, THEY DO A 16-BIT VIDEO...Press question mark to see available shortcut keysHomeCollectionsJoin Google+Send FeedbackHelpRegionPrivacy Policy - Terms of Service - Maps Terms©2017 GoogleSearchSign inSam SteeleVideo GamesMay 17, 2012Just when I think Community can't get anymore awesome, THEY DO A 16-BIT VIDEO GAME EPISODE!Community (2009– )imdb.com 3 plus ones 3 one comment 1 no sharesShared publicly•View activitySam SteeleWell, it was just an animation :P But the art style reminded me more of an SNES game than an NES game.May 20, 2012Related CollectionsFollowVideo GamesSam SteeleFollowLara Croft ♡☆Indrani Schmidt ㊗FollowWorld of WarcraftJon SullivanFollowSpeedrunAnders K. MadsenFollowLEGO Jurassic World GameplayMagnus PlaywithMe

value: This website .


text:
Why a baby's first 'da-da' DOESN'T mean they're talking to daddy: Infants just like the sound of their own voice, study reveals | Daily Mail Online
Why a baby's first 'da-da' DOESN'T mean they're talking to daddy: Infants just like the sound of their own voice, study reveals
Deaf infants rarely produced repetitive sounds until receiving hearing implants, which helped them begin to babble just like their healthy peers
It also helps explain why a baby's first word is usually 'da-da', even though it's often with 'mama' they spend most of their day
Published: 07:07 EDT, 23 October 2015 | Updated: 07:08 EDT, 23 October 2015
'Da-da' is often the first word many babies use, but new research has revealed they are not specifically calling for their father but instead listening to the sound of their own voices.
Repetitive babbles are mainly motivated by their ability to hear their own voice, rather than wanting a kiss or cuddle from their father, say scientists.
Say 'ma-ma'!: Repetitive babbles is mainly motivated by their ability to hear their own voice, rather than wanting a kiss or cuddle from their father, say scientists (stock image pictured)
In the first study of its kind, scientists found that deaf infants rarely produced repetitive sounds, such as 'ba-ba' or 'da-da', until receiving hearing implants, which soon helped them begin to babble just like their healthy peers.
What will humans look like in 1,000 years? Video suggests we... Cheese really is like crack: Study reveals the food triggers... Beware loud-mouthed guys: Monkeys with smaller testicles... Do you get HANGRY? Scientists say aggression when we need to...
Professor Mary Fagan of the University of Missouri-Columbia said: 'The research tells us infants are motivated by hearing the sounds they produce, so these sounds are functional in some way.
WHY DO BABIES TEND TO SAY 'DA-DA' BEFORE 'MA-MA'
Rresearch has shown there are some constraints on the sounds babies can produce early on in their development because of the structure of their mouth and their limited motor control.
This means 'D' happens to be one of the first sounds babies can produce, before 'M'.
Professor Fagan says when babies are born their tongues are fairly large in proportion to the mouth, which helps babies nurse, so the tongue has very little range of movement.
The early sounds they produce at three months are usually G or 'guh' sounds. As they grow they can sound the D, so in the first three months the first sounds are usually K, G and D. By six months it's usually T, D and N because they involve the tongue tip.
Then at nine months it's P and B which involve the lips. All of these sounds just involve a small closure and release. The M requires sustained closure to hold the lips closed, so that sound often comes along a little later.
She has found a similar situation in languages like Italian, Spanish and Chinese.
'Research conducted by others supports the idea babies form mental representations of their own babbles - such as these strings of syllables - which may be the reason infants tend to use the sounds they have babbled in their first words rather than the sounds that are most common in the speech adults use with them.'
She analysed the noises of 16 infants with profound hearing loss before and after they received cochlear implants, and compared with with those of 27 healthy controls.
Before receiving the implants, the babies produced few vocalisations like 'ba-ba' or 'da-da.'
But within a few months the number of babies making them, the number of vocalisations containing repetitive syllables and the number of repetitions in the string such as 'ba-ba-ba-ba-ba' all increased.
Professor Fagan said: 'The fact they attend to and learn from their own behaviours, especially in speech, highlights how infants' own experiences help their language, social and cognitive development.
'This research does not diminish the importance of the speech babies hear from others, we know they need to learn from others, but it raises our awareness infants are not just passive recipients of what others say to them.
'They are actively engaged in their own developmental process.'
Babbling sounds with consonant vowel repetitions, such as 'da-da,' are common among infants once they reach eight months old, but they are not prevalent among those born profoundly deaf profound hearing loss.
Scientists found that deaf infants rarely produced repetitive sounds, such as 'ba-ba' or 'da-da', until receiving hearing implants, which helped them soon begin to babble just like their healthy peers (stock image pictured)
The research published in the Journal of Experimental Child Psychology shows the noises are mainly inspired by being able to hear themselves.
Additionally, after being fitted with the hearing aids they soon babbled as often as their healthy peers, allowing them to catch up developmentally.
ARE YOU THE ELDEST CHILD? THEN YOU'RE PROBABLY THE SMARTEST
The youngest child may be given the freedom to do what they want but it is the eldest child who gets the brains.
A study found that first-born in a family tends to be the smartest – and each successive sibling is slightly less bright.
What is more, younger children actually think of themselves as being less intelligent than their big brothers and sisters.
The actual difference is small – with IQ dropping about 1.5 IQ points per sibling.
But it may help explain why eldest children often do so well in life.
The German researchers aren’t sure why big brothers and sisters seem to be blessed with brains but say it could be because they benefit from their parents’ undivided attention – at least until a pesky little brother or sister comes along.
It is also possible that the eldest child’s brainpower gets a boost from teaching his or her siblings about the ways of the world.
Professor Fagan added: 'Hearing is a critical aspect of infants' motivation to make early sounds.'
She also says parents who have children with profound hearing loss should be well informed about cochlear implants before making the decision for their children to get the devices.
'Many parents elect to have their children with profound hearing loss receive cochlear implants, and that is a decision parents alone can make.
'Whatever decision the parents make, the data strongly show if parents are going to choose a cochlear implant, the sooner the better. Studies like mine show how rapidly babies with hearing loss respond to cochlear implants, often minimizing the impact on their speech, language and vocabulary development.'
Earlier research has shown there are some constraints on the sounds babies can produce early on in their development because of the structure of their mouth and their limited motor control.
The early sounds they produce at three months are usually G or guh sounds. As they grow they can sound the D, so in the first three months the first sounds are usually K, G and D. By six months it's usually T, D and N because they involve the tongue tip.
Then at nine months it's P and B which involve the lips. All of these sounds just involve a small closure and release. The M requires sustained closure to hold the lips closed, so that sound often comes along a little later. She has found a similar situation in languages like Italian, Spanish and Chinese.

type: global

value: This website is the website of the Daily Mail, a newspaper in the United Kingdom, and of its sister paper The Mail on Sunday. MailOnline is a division of dmg media, which is owned by Daily Mail and General Trust plc.


text:
Topaz Solitaire Fine Diamond Rings | eBay
Topaz Solitaire Fine Diamond Rings
Gorgeous 9ct Solid Gold NATURAL Swiss Topaz & Diamond Ring - Solitaire
9ct Yellow Gold NATURAL Topaz & Diamond Cushion Solitaire Ring. This STUNNING ring has been handcrafted in SOLID 9ct Yellow gold. It has a large SPARKLING NATURAL Topaz of cushion-cut as center stone, that sits high above a gorgeously pierced gallery.
Oval BLUE TOPAZ (7 x 5mm) & 4 Diamond DRESS RING - 9k Yellow Gold - Size N 1/2
Oval Blue Topaz & 4 Diamond Dress Ring - 9k Yellow Gold. A lovely oval blue topaz is claw set with 4 diamond accents (Single cut, TDW approx 0.025ct, Colour H and clarity P1) in heart shaped settings.
Estimated delivery dateEst. delivery Thu, Mar 28
Metal: Yellow GoldStyle: Solitaire
2.36 Ct Cushion Swiss Blue Topaz White Diamond 14K Yellow Gold Ring
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8.54 Ct Cushion London Blue Topaz White Diamond 10K Yellow Gold Ring
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Sale White Topaz Engagement Diamond 925 Sterling Silver Solitaire Fine Ring
★Center Stone：100% Genuine White Topaz. Stamped：925. Ring Size：6.5. Width Top：6.2mm. Service you wholeheartedly. You will get response within 24 hours. we are very glad to help you. Clarity：Flawless.
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Coins, Bars, Notes & Bullion. Flatware and Silver. DEC Zircon & Tanzanite. This beautiful NEW ring would make an excellent addition to your jewelry collection! These lovely diamonds are a darling J-K color and have a nice I1-I2 clarity.
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14K White Gold Swiss Blue Topaz Diamond Cathedral Ring 2.25 Carat Size 7
Gemstone: Genuine Swiss Blue Topaz, Round Cut, 8 mm, Checkerboard Cutting, 2.25 Carats, Lagoon Blue Hue with Brilliant Sparkle. Accent Stones: 6 pieces Genuine Diamonds 0.12 Carats Total Weight, J-K color and SI-I clarity. Ring: 3.25 grams 14 Karat White Gold with 14K Stamp. Ring is in standard size 7. Ring features exceptional Design, Craftsmanship and finishing. Perfect gift for Mothers Day, Birthdays, Valentines Day, Graduation, Christmas or just about any other occasion. Includes aPresentation Gift Box. Style R62268.
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Brand: OravoMetal: White GoldStyle: SolitaireCustoms services and international tracking provided
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value: This website is an American multinational e-commerce corporation based in San Jose, California, that facilitates consumer-to-consumer and business-to-consumer sales through its website.


text:
Patent US20020161298 - Methods and chemical preparations for time-limited marking of biopsy sites - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsDetectable markers that may be introduced into a cavity created by removal of a biopsy specimen to mark the location of the biopsy site so that it may be located in a subsequent medical/surgical procedure. The markers remain present in sufficient quantity to permit detection and location of the biopsy...http://www.google.com/patents/US20020161298?utm_source=gb-gplus-sharePatent US20020161298 - Methods and chemical preparations for time-limited marking of biopsy sitesAdvanced Patent SearchPublication numberUS20020161298 A1Publication typeApplicationApplication numberUS 10/087,114Publication dateOct 31, 2002Filing dateFeb 27, 2002Priority dateFeb 2, 1999Also published asCA2361530A1, CA2361530C, DE60045094D1, EP1146910A2, EP1146910B1, EP2277553A1, US6161034, US6427081, US6567689, US20060084865, US20060122503, US20060155190, US20090131825, US20100198059, WO2000045854A2, WO2000045854A3Publication number087114, 10087114, US 2002/0161298 A1, US 2002/161298 A1, US 20020161298 A1, US 20020161298A1, US 2002161298 A1, US 2002161298A1, US-A1-20020161298, US-A1-2002161298, US2002/0161298A1, US2002/161298A1, US20020161298 A1, US20020161298A1, US2002161298 A1, US2002161298A1InventorsFred Burbank, Paul Lubock, Michael Jones, Nancy ForcierOriginal AssigneeSenorx, Inc.Export CitationBiBTeX, EndNote, RefManReferenced by (24), Classifications (22), Legal Events (3) External Links: USPTO, USPTO Assignment, EspacenetMethods and chemical preparations for time-limited marking of biopsy sites
What is claimed is: 1. A method for marking a site within the body of a mammalian patient from which a tissue sample has been removed, said method comprising the step of: A. introducing into the site a detectable marker that (i) remains present at the site in sufficient quantity to permit detection and location of the site for at least a predetermined first time period after introduction and (ii) does not interfere with imaging of tissue adjacent the site at a predetermined second time point after introduction. 2. The method of claim 1 wherein the detectable marker is imageable, and wherein the marker remains present at the site in sufficient quantity to allow detection of the site by imaging of the marker at said first time point but clears sufficiently from the site so as to not interfere with does not interfere with imaging of tissue adjacent the site at said second time point. 3. The method of claim 2 wherein the imaging method by which the marker detectable is selected from the group of imaging methods consisting of: X-ray; fluoroscopy; mammography; computed tomography; magnetic resonance imaging; ultrasound; Doppler, radiation detector; and, possible combinations thereof. 4. The method of claim 1 wherein the marker is detectable by palpation. 5. The method of claim 4 wherein the palpable marker is selected from the group consisting of: at least one balloon; at least one bead; a flowable space occupying material; a collagenous material, a gelatinous material; gelatin; cross-linked gelatin; and, possible combinations thereof. 6. The method of claim 1 wherein the marker is visually detectable. 7. The method of claim 6 wherein the visually detectable marker is a colored substance selected from the group consisting of: a dye; a colorant; colorant particles; carbon; and, possible combinations thereof.

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text: 41-923-1014-14213758241031820 9944.6%30.0%100.0%Fast break points: 0Points in the paint: -1Total Team Turnovers (Points off turnovers): 36 (8)+/- denotes team's net points while the player is on the court. Flagrant Fouls: None Technical Fouls: PLAYERS:2 VANCOUVER ( B. Benjamin 1, B. Scott 1 ), 1 DALLAS ( J. Jackson 1 ) -TEAMS: None -COACHES:None Attendance: 15,325

value: This website is the official website of ESPN. It is owned by ESPN Internet Ventures, a division of ESPN Inc.


text:
Customization for Image Gallery Slider in Wordpress - Display Captions | CSS | HTML | PHP | Website Design | WordPress
Customization for Image Gallery Slider in Wordpress - Display Captions
I have a slider used on many pages on the site. Some examples below:
[login to view URL]~romanobe/[login to view URL]
I'd like to customize so the captions display over the image at the bottom. See screenshot for example.
See more: html image gallery example, xml image gallery captions, example lightview image gallery, wordpress slideshow gallery, frontend gallery slider for acf, how to create a slideshow in wordpress, wordpress image carousel with lightbox, wordpress image slider, wordpress gallery styles, turn wordpress gallery into slideshow, wordpress slider, image gallery thumbnail slider aspnet, image gallery display using, aspnet image gallery example, image gallery example cnet, sharepoint image gallery custom display, display image gallery asp net using, flash image gallery thumbnail slider, aspnet ajax image gallery example, wordpress image gallery database table
Project ID: #18167674
Hi, I am ready to customize slider to show caption and assure 100% satisfaction guarantee. Looking forward to your fruitfully response. Regards Muhammad Alyas
Hello, how are you? I am a wp and js expert . I will fix your gallery slider surely .. This is a piece of cake for me. I have checked your project description and will fix this issue correctly so that you will be More
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Hello, I AM AVAILABLE TO START WORK I am an experienced website developer, Develop near about 550 websites. I am able to customize the Image Gallery Slider in Wordpress and make it mobile friendly as well. Work sa More
Hello, I have read the job and ready to add caption in overlay over the image. lets do it thanks sam
Hi, I can easily complete this task and checked the screenshot as well. I have 6+ years experience and specialize in WordPress and WooCommerce. I can handle anything in it. My work sample http://amigosde More
Hello How are you My name is Xu image slider is based on javascript and php so I am sure I can customize your sliders i have full time and I can start to work immediately Please contact me and do let us discuss More
Hi, I would love to take care of this for you. It's just a JavaScript update so it should go smoothly. This is as long as the captions are taken from the image title attribute. If you need some interface customizati More
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Hello! I have reviewed the galleries. The galleries were powered by Owl carousel. I have great experiences with wordpress/Owl carousel. I will shortly add the function. I am now available. I will complete the job More
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value: This website is an Australian freelance marketplace website, which allows potential employers to post jobs that freelancers can then bid to complete. Founded in 2009, its headquarters is located in Sydney, Australia, though it also has offices in Vancouver, London, Buenos Aires, Manila, and Jakarta.


text:
Caml sharepoint 2007 list search Jobs, Employment | Freelancer
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text:
Use of fodder trees and shrubs (Book, 1969) [WorldCat.org]
I thought you might be interested in this item at http://www.worldcat.org/oclc/6084875 Title: Use of fodder trees and shrubs Author: S L Everist; Queensland. Division of Plant Industry Publisher: [Brisbane] Queensland Dept. of Primary Industries, 1969. OCLC:6084875
Use of fodder trees and shrubs
S L Everist; Queensland. Division of Plant Industry.
[Brisbane] Queensland Dept. of Primary Industries, 1969.
Queensland. Division of Plant Industry. Advisory leaflet 1024
Everist, S. L.
Use of fodder trees and shrubs.
[Brisbane] Queensland Dept. of Primary Industries, 1969
(OCoLC)960107073
Find more information about: S L Everist
[by] S.L. Everist.
Add tags for "Use of fodder trees and shrubs". Be the first.
<http://www.worldcat.org/oclc/6084875> # Use of fodder trees and shrubs
library:oclcnum "6084875" ;
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schema:creator <http://viaf.org/viaf/6512545> ; # S. L. Everist
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schema:isPartOf <http://experiment.worldcat.org/entity/work/data/29028341#Series/queensland_division_of_plant_industry_advisory_leaflet_1024> ; # Queensland. Division of Plant Industry. Advisory leaflet 1024
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schema:publisher <http://experiment.worldcat.org/entity/work/data/29028341#Agent/queensland_dept_of_primary_industries> ; # Queensland Dept. of Primary Industries
wdrs:describedby <http://www.worldcat.org/title/-/oclc/6084875> ;
<http://experiment.worldcat.org/entity/work/data/29028341#Agent/queensland_dept_of_primary_industries> # Queensland Dept. of Primary Industries
schema:name "Queensland Dept. of Primary Industries" ;
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<http://experiment.worldcat.org/entity/work/data/29028341#Series/queensland_division_of_plant_industry_advisory_leaflet_1024> # Queensland. Division of Plant Industry. Advisory leaflet 1024
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schema:name "Queensland. Division of Plant Industry." ;
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schema:location <http://experiment.worldcat.org/entity/work/data/29028341#Place/brisbane> ; # Brisbane
schema:organizer <http://experiment.worldcat.org/entity/work/data/29028341#Agent/queensland_dept_of_primary_industries> ; # Queensland Dept. of Primary Industries
Use of fodder trees and shrubs/S L Everist; Queensland. Division of Plant Industry.; [Brisbane] Queensland Dept. of Primary Industries, 1969.

value: This website is a union catalog that itemizes the collections of 15,637 libraries in 107 countries that participate in the OCLC global cooperative. It is operated by OCLC, Inc.


text: Industry NewsComcast’s board declares USD0.275 quarterly dividendM2 Communications - 07/28/2016 5:31 AM ET'Cursed Child' reigniting Pottermania [The San Diego Union-Tribune]McClatchy-Tribune - 07/28/2016 5:04 AM ETDish may drop WHDH, WLVI [Boston Herald]McClatchy-Tribune - 07/28/2016 1:08 AM ETCareerBuilder Survey Reveals Five Common Job Seeker Pitfalls That Will Hinder Any Career SearchPR Newswire - 07/28/2016 12:05 AM ETCareerBuilder Gives Job Seekers Inside Peek At Who They're Up Against for the Job And What It Takes to Get HiredPR Newswire - 07/28/2016 12:04 AM ETSponsored Financial Commentaries

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text:
Blarney Castle, Ireland | Places to go | Pinterest
Found on irishtourist.com TripMasters
Emily Detzler
Sharee Talbot
Kate Catherwood Gay
MAGICAL CASTLES...MAGICAL PALACES
Travel Sarah Blodgett
Blarney Castle, Ireland | Flickr - Fotosharing!
by atomicpuppy68 196
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by dnriggsb 34
from allposters.com Blarney Castle, County Cork, Munster, Eire (Republic of Ireland)
Shelby Shumway
by Buhler's World 2059
Erice - Sicily - Italy ➤ goo.gl/RfdRr - Erice is located on top of Mount Erice, at around 750m above sea level, overlooking the city of Trapani, the low western coast towards Marsala, the dramatic Punta del Saraceno and Capo San Vito to the north-east, and the Aegadian Islands on Sicily's north-western coast, providing spectacular views.
Blarney castle, Ireland #studyabroad www.arcadia.edu/...
Blarney Castle, County Cork Silver Irish Jewelry at www.handcraftedco...
✈ Travel - Places I've Been and Want Visit ✈

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Weak Sale of Bonds Tests Germany’s Stature in Crisis - The New York Times
Global Business|Weak Bond Sale Tests Germany’s Stature in Crisis
By JACK EWING and STEPHEN CASTLE NOV. 23, 2011
FRANKFURT — Germany’s stature as an island of stability in the European debt crisis was shaken Wednesday when it fell far short of selling all the government bonds it put up for auction.
Investors are beginning to question whether there are any havens left in Europe after German bonds, which the government uses to raise money for operations, got a surprisingly bad reception. The sale — more than one-third of the bonds found no buyers — helped push down stocks and contributed to the atmosphere of fear that prevails among the countries, including Germany, that share the euro currency.
While analysts cautioned against reading too much into a single bond auction, the weak auction was at the very least a blow to the prestige of Germany, whose economic strength has enabled it to largely dictate how the euro region will cope with the debt crisis.
And there is a growing sense in the region that unless the European Central Bank and big euro members like Germany and France agree to take major action to prop up the region’s finances, the euro-currency union itself could start to crumble. The debt crisis has toppled five governments, including Italy and Greece, by raising those countries’ borrowing costs to dangerously high levels. And now the crisis is prompting many investors to pull money out of the euro region altogether.
Until now, Germany has been able to point to its solid economy and low debt as proof that public spending cuts — austerity — are the answer to the region’s debt crisis. And it has been the loudest opponent of proposals for the European Central Bank to help shore up weaker economies by serving as lender of last resort to national governments.
But if investor faith in Germany slips, its moral authority could weaken, too.
“Losing that bargaining power could be massive for Germany,” said Silvio Peruzzo, an economist at the Royal Bank of Scotland. “That is one of the pillars on which Germany has based its policy approach.”
Germany on Wednesday had sought to raise as much as 6 billion euros ($8 billion) in an auction of 10-year bonds. But it was able to sell only 3.9 billion euros worth, Germany’s central bank, the Bundesbank, reported.
Another few bad auctions, Mr. Peruzzo said, “could shift the debate to, ‘The austerity is too strong, we need growth.’ ”
Already, signs that many of the euro region’s 17 countries are on the verge of economic recession has been challenging the wisdom of Germany’s austerity prescription.
On Wednesday, the European Commission, the executive agency for the 27-nation European Union, proposed measures for addressing the debt crisis in the 17-country subset of members that share the euro currency. The proposals included issuing, for the first time, bonds backed by all the countries of the euro zone — a measure that, despite German opposition, is gaining acceptance as a means of market reassurance as the crisis persists.
Chancellor Angela Merkel of Germany, during a budget debate Wednesday in Berlin, reiterated her opposition to the creation of the bonds. But she has not completely ruled out the possibility of issuing bonds based on collective euro zone obligations at some future date.
The disappointing German auction on Wednesday could be a signal that that future might be coming sooner than many had been expecting.
Charles Diebel, head of market strategy at Lloyds Banking in London, described the disappointing German auction as “a pretty significant buyers’ strike.”
“Seeing as these are supposedly the safe-haven asset of choice, people are concluding that the risk is becoming systemic,” Mr. Diebel said.
The low demand, he said, may indicate that investors increasingly expect Germany and the European Central Bank, which together would bear a large financial portion of a major euro zone bailout, “to go all in and support the euro.”
By that thinking, investors might have concluded that the relatively low yield, or interest rates, on the German bonds — Wednesday’s auctioned bonds were priced at an average yield of 1.98 percent — were not worth the potential risk that Germany’s economy could soon be strained by the demands of bailing out Italy or Spain or other big debt-saddled euro union members.
Such strains could send German bond yields much higher than Wednesday’s offering.
For comparison’s sake, yields on 10-year bonds offered by the United States Treasury, which continue to be considered a global haven, are about 1.9 percent.
Mr. Diebel said that the failure of Germany and the European Central Bank to take significant steps to address the region’s debt crisis would mean “the risk of a euro breakup increases.”
But it is also possible to argue that German bonds could gain value in case of a breakup, which would force Germany to reintroduce its own currency. Economists agree that the euro is weaker against other major currencies than the German deutsche mark would be.
German officials sought to play down the significance of Wednesday’s bond auction. The sale was one of nine this year that fell short of demand, said Jörg Müller, a spokesman for the German Finance Agency, which administers bond sales.
“It’s routine,” he said, adding that demand often tails off toward the end of the year. He said the excess bonds would be sold on the open market, and would not lead to any funding shortages for the government.
But if shortfalls in German bond auctions are routine, few have seen such a big gap — 35 percent — between the size of the offering and the number actually sold. In April and August auctions, for example, the shortfall was only 19 percent.
Mr. Peruzzo, of Royal Bank of Scotland, said he thought only a minority of investors had doubts about Germany. But he added that market sentiment was so fragile in Europe that confidence could begin to crumble anyway.
“The debate will quickly switch to, ‘Is this the start of credit erosion of Germany?’ ” Mr. Peruzzo said.
Some Wall Street analysts viewed the German bond auction as a wake-up call.
“Investors sent a very strong message to Frankfurt: ‘You’re not immune from the fallout, and it’s time that you do something about it,’ ” said Andrew Wilkinson, the chief economic strategist at Miller Tabak & Company in New York.
Stephen A. Walsh, the chief investment officer for Western Asset Management, in New York, asked, “Can you imagine if a U.S. Treasury auction failed?
“As the dominoes have fallen, with sovereign government debt not priced like it has credit risk,” Mr. Walsh said, “the last domino is the U.S. Treasury and the second-to-last has been German bunds.” He was using the German term for bonds.
In the first steps toward the closer political and financial integration that many have come to believe is essential for the euro’s survival, the European Commission on Wednesday went beyond floating the idea of euro bonds. It also proposed that countries surrender more power over their finances to the European authorities, giving Brussels the right to request a rewrite of spending plans that seem too profligate.
“Without stronger governance in the euro area it will be difficult, if not impossible, to sustain the common currency,” José Manuel Barroso, president of the commission, said in Brussels.
The proposals, which would require the approval of all 27 European Union governments to go in to effect, align Brussels with Germany on the issue of oversight.
German officials have long argued that the European authorities needed greater powers to scrutinize the budgets of member countries that use the euro, to avoid what Germans consider the profligacy that created Greece’s and Italy’s problems and pulled the rest of the region into a crisis whose end seems nowhere in sight.
Stephen Castle reported from Brussels. David Jolly contributed reporting from Paris and Julie Creswell from New York.
A version of this article appears in print on November 24, 2011, on Page A1 of the New York edition with the headline: Weak Sale of German Bonds Ratchets Up Fears. Order Reprints| Today's Paper|Subscribe

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Book Quality Inn, Rocky Mount, North Carolina - Hotels.comEnglish (United States)Book online or call 800-246-8357This call is free. 24 hours a day; 7 days a week.HotelsHotel DealsPackages & FlightsGroupsGift CardsHelpWebsite feedbackSign in & AccountSign inCreate an accountYour bookingsTrip PlannerReview a hotelHotels.com® RewardsYour bookingsJump toOverviewRoom choicesMapReviewsHotel informationLowest price: $58Check availability HotelsUnited States of America HotelsNorth Carolina HotelsRocky Mount HotelsQuality InnAll hotels in Rocky Mount, North Carolina, United States of America1 room, 2 adultsChange searchDestination, hotel, landmark or addressCheck inCheck out Rooms123456789+Room 1:Adults12345678Aged 18+Children01230-17Age at check in:Child 1:-?-<11234567891011121314151617SearchYou can collect Hotels.com® Rewards nights hereQuality Inn, Rocky Mount2.5 stars2.5 stars1200 Benvenue Rd, Rocky Mount, NC, 27804, United States of America, 855-239-9223Lowest price$58Price GuaranteePrice Guarantee on hotel bookings. 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Click below for details.Jump to:OverviewRoom choicesMapReviewsHotel informationReceptionLobby Sitting AreaLobby Sitting AreaLobby LoungeLobby LoungeLobby LoungeStandard Double Room, 2 Double Beds, Smoking - GuestroomStandard Room, 1 King Bed, Non Smoking - GuestroomStandard Room, 1 King Bed, Non Smoking - GuestroomGuestroomStandard Double Room, 2 Double Beds, Non Smoking - GuestroomGuestroomGuestroomGuestroomGuestroomGuestroomGuestroomGuestroomGuestroomGuestroomGuestroomGuestroomIn-Room AmenityProperty AmenityBreakfast AreaBreakfast AreaBreakfast AreaBreakfast AreaBreakfast AreaBreakfast AreaMeeting FacilityMeeting FacilityMeeting FacilityBusiness CenterHotel FrontHotel FrontHotel Front[1/38]Flag this image1 - Quality Inn, Rocky Mount2 - Quality Inn, Rocky Mount, Reception3 - Quality Inn, Rocky Mount, Lobby Sitting Area4 - Quality Inn, Rocky Mount, Lobby Sitting Area5 - Quality Inn, Rocky Mount, Lobby Lounge6 - Quality Inn, Rocky Mount, Lobby Lounge7 - Quality Inn, Rocky Mount, Lobby Lounge8 - Quality Inn, Rocky Mount, Standard Double Room, 2 Double Beds, Smoking, Guestroom9 - Quality Inn, Rocky Mount, Standard Room, 1 King Bed, Non Smoking, Guestroom10 - Quality Inn, Rocky Mount, Standard Room, 1 King Bed, Non Smoking, Guestroom11 - Quality Inn, Rocky Mount, Guestroom12 - Quality Inn, Rocky Mount, Standard Double Room, 2 Double Beds, Non Smoking, Guestroom13 - Quality Inn, Rocky Mount, Guestroom14 - Quality Inn, Rocky Mount, Guestroom15 - Quality Inn, Rocky Mount, Guestroom16 - Quality Inn, Rocky Mount, Guestroom17 - Quality Inn, Rocky Mount, Guestroom18 - Quality Inn, Rocky Mount, Guestroom19 - Quality Inn, Rocky Mount, Guestroom20 - Quality Inn, Rocky Mount, Guestroom21 - Quality Inn, Rocky Mount, Guestroom22 - Quality Inn, Rocky Mount, Guestroom23 - Quality Inn, Rocky Mount, Guestroom24 - Quality Inn, Rocky Mount, In-Room Amenity25 - Quality Inn, Rocky Mount, Property Amenity26 - Quality Inn, Rocky Mount, Breakfast Area27 - Quality Inn, Rocky Mount, Breakfast Area28 - Quality Inn, Rocky Mount, Breakfast Area29 - Quality Inn, Rocky Mount, Breakfast Area30 - Quality Inn, Rocky Mount, Breakfast Area31 - Quality Inn, Rocky Mount, Breakfast Area32 - Quality Inn, Rocky Mount, Meeting Facility33 - Quality Inn, Rocky Mount, Meeting Facility34 - Quality Inn, Rocky Mount, Meeting Facility35 - Quality Inn, Rocky Mount, Business Center36 - Quality Inn, Rocky Mount, Hotel Front37 - Quality Inn, Rocky Mount, Hotel Front38 - Quality Inn, Rocky Mount, Hotel FrontCity-center hotel in Rocky Mount Free buffet breakfast, free WiFi, and free parking Main amenities100 guestroomsSeasonal outdoor poolBusiness centerCoffee/tea in a common areaAir conditioningDaily housekeepingComputer stationFront desk safeSelf-serve laundryMeeting roomGift shops/newsstandsFree newspapers in the lobbyFor familiesFree cribs/infant bedsRollaway/extra beds (surcharge)Free toiletriesDaily housekeepingLaundry facilitiesIron/ironing boardWhat’s aroundHeart of Rocky MountGolden East Crossing Mall (0.2 mi / 0.3 km)Rocky Mount Sports Complex (1 mi / 1.7 km)Stonewall Manor (1.2 mi / 2 km)Rocky Mount Children's Museum and Science Center (2.2 mi / 3.6 km)Hot Wheels Amusment Park LLC (2.6 mi / 4.1 km)See mapGood3.4 / 5Value for moneyBest value for moneyLocationGreat locationServiceFantastic serviceBreakfastTasty breakfast168See all 168 Hotels.com reviewsTripAdvisor Traveller Rating: 3From 161 reviewsTripAdvisor Traveller RatingEmailSaveShareHotels.com® RewardsBook this hotel and collect nights after your stayQuality Inn, Rocky MountHotel Info: 855-239-9223 from $58Destination, hotel, landmark or addressCheck inCheck out Rooms123456789+Room 1:Adults12345678Aged 18+Children01230-17Age at check in:Child 1:-?-<11234567891011121314151617Check availability Room, 1 King Bed, Non Smoking, Refrigerator & MicrowaveRoom, 2 Double BedsStandard Double Room, 2 Double Beds, SmokingStandard Room, 1 King Bed, Non SmokingRoom, 1 King Bed, AccessibleStandard Double Room, 2 Double Beds, Non SmokingRoom, 1 King BedStandard Room, 1 King BedRoom, 1 Double BedStandard Room, 1 Queen Bed, Non SmokingRoom, 2 Double Beds, Non Smoking, Refrigerator & MicrowaveCheck availability More great choicesSee all hotels in Rocky MountList viewMap viewSee all hotels in Rocky MountAt a glanceKey factsHotel sizeThis hotel has 100 roomsThis hotel is arranged over 3 floorsArriving/leavingCheck-in time starts at 3 PMCheck-out time is noonRequired at check inMinimum check-in age is 21 Credit card or cash deposit required
RV/bus/truck parking See mapAlso known asQuality Inn Rocky MountQuality Rocky MountPoliciesThe name on the credit card used at check-in to pay for incidentals must be the primary name on the guestroom reservation. Optional extrasRollaway beds are available for USD 10 per nightNearby Two Star Rocky Mount hotelsAshburn Inn of Gold Rock2 starsPoor1.8 / 5Traveler's Inn I-95 Exit -1452.5 starsFair2.7 / 5From $40Red Carpet Inn Battleboro2 starsGood3.1 / 5From $46Econo Lodge North2 starsGood3.3 / 5From $55See more Two Star Rocky Mount hotelsIn the hotelFood and drinkFree buffet breakfastCoffee/tea in a common area Things to doOutdoor seasonal poolUse of nearby fitness center (discount)Working awayBusiness centerOne meeting roomComputer stationServicesLaundry facilitiesFree newspapers in lobbyFacilitiesNumber of buildings/towers - 1Elevator/liftSafe-deposit box at front deskDesignated smoking areas (fines apply)Television in common areasAccessibilityIn-room accessibilityIn the roomHome comfortsIn-room climate control (air conditioning)Air conditioningCoffee/tea makerIron/ironing boardFreshen upFree toiletriesHair dryerBe entertainedPay movies Satellite TV channels Stay connectedDeskFree WiFiFree local callsFood and drinkRefrigerator (on request)Microwave (on request)MoreDaily housekeepingTop Rocky Mount hotelsAffordable Suites Wilson2 starsExcellent4.2 / 5From $79America's Best Value Inn2 starsFair2.6 / 5From $62Nearby hotelsDays Inn Rocky Mount Golden East2 starsFair2.5 / 5From $47Affordable Suites Rocky Mount2 starsOutstanding4.7 / 5From $69Motel 6 Rocky Mount2 starsPoor1.7 / 5From $45Americas Express Inn2.5 starsFair2.8 / 5From $49$44Also popular with travelers from the USASee all hotels in Rocky MountList viewMap viewSee all hotels in Rocky MountQuality Inn, Rocky Mount’s small printAlso known asQuality Inn Rocky MountQuality Rocky MountPoliciesThe name on the credit card used at check-in to pay for incidentals must be the primary name on the guestroom reservation. Optional extrasRollaway beds are available for USD 10 per nightWe have included all charges provided to us by this hotel. However, charges can vary, for example, based on length of stay or the room you book.Quality Inn, Rocky MountIs the description of this hotel not correct? Tell usChoose one of the following to unlock Secret Prices and pay less on select hotels.EmailSign up for our latest offersHotels.com appDownload the app and book on the goHotels.com® RewardsJoin now! Collect 10 nights, get 1 free*Top DestinationsHotels in New York, New YorkHotels in Las Vegas, NevadaHotels in Chicago, IllinoisHotels in San Francisco, CaliforniaHotels in Washington, District of ColumbiaHotels in Boston, MassachusettsHotels in San Diego, CaliforniaHotels in Orlando, FloridaHotels in London, United KingdomHotels in New Orleans, LouisianaHotels in Los Angeles, CaliforniaHotels in San Antonio, TexasHotels in Paris, FranceHotels in Seattle, WashingtonHotels in Atlanta, GeorgiaHotels in Philadelphia, PennsylvaniaHotels in Austin, TexasHotels in Atlantic City, New JerseyHotels in Rome, ItalyHotels in Myrtle Beach, South CarolinaHotels in Dallas, TexasHotels in Houston, TexasHotels in Denver, ColoradoHotels in Miami, FloridaSupport & FAQsYour bookingsFAQsContact usWebsite feedbackReview a hotelFor Suppliers, Affiliates and the MediaAffiliate with usPrivate LabelPromote with UsTravel AgentsPress OfficeUser Terms and Privacy PolicyTerms & ConditionsPrivacy PolicyCookie PolicyAbout our adsAbout UsAdd your hotelJobsTravel GuidesTop 50 CitiesAll countriesAll hotelsSite index© 2017 Hotels.com, L.P. All rights reserved.Hotels.com and the Hotels.com logo are trademarks or registered trademarks of Hotels.com, LP in the U.S. and/or other countries. All other trademarks are property of their respective owners.* Learn more about Hotels.com® RewardsABOUT SSL CERTIFICATES

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Calla Lily Necklace White Pearl Branch Leaf Dainty by hotmixcold
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Patent US7782118 - Gate drive for wide bandgap semiconductor device - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsA gate drive circuit for a wide bandgap semiconductor junction gated transistor includes a gate current limit resistor. The gate current limit resistor is coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use and limits a gate current provided to the gate input...http://www.google.com/patents/US7782118?utm_source=gb-gplus-sharePatent US7782118 - Gate drive for wide bandgap semiconductor deviceAdvanced Patent SearchPublication numberUS7782118 B2Publication typeGrantApplication numberUS 11/790,973Publication dateAug 24, 2010Filing dateApr 30, 2007Priority dateApr 30, 2007Fee statusPaidAlso published asDE102008021672A1, US20080265980Publication number11790973, 790973, US 7782118 B2, US 7782118B2, US-B2-7782118, US7782118 B2, US7782118B2InventorsJohn Vincent Reichl, David Everett Bulgher, Ty R. McNuttOriginal AssigneeNorthrop Grumman Systems CorporationExport CitationBiBTeX, EndNote, RefManPatent Citations (4), Non-Patent Citations (2), Referenced by (6), Classifications (19), Legal Events (3) External Links: USPTO, USPTO Assignment, EspacenetGate drive for wide bandgap semiconductor device
US 7782118 B2Abstract
A gate drive circuit for a wide bandgap semiconductor junction gated transistor includes a gate current limit resistor. The gate current limit resistor is coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use and limits a gate current provided to the gate input of the junction gated transistor. An AC-coupled charging capacitor is also included in the gate drive circuit. The AC-coupled charging capacitor is coupled to the gate input of the wide bandgap semiconductor junction gated transistor when in use and is positioned parallel to the gate current limit resistor. A diode is coupled to the gate current limit resistor and the AC-coupled charging capacitor on one end and an output of a gate drive chip on the other end When in use, the diode lowers a gate voltage output from the gate drive chip applied to the gate input of the wide bandgap semiconductor junction gated transistor through the gate current limit resistor. The gate drive circuitry provides a small, efficient, and cost effective control circuitry for a wide bandgap semiconductor junction gated transistor.
1. A gate drive circuit for a wide bandgap semiconductor junction gated transistor, comprising:
a gate current limit resistor coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use, wherein the gate current limit resistor limits a gate current, provided to the gate input of the wide bandgap semiconductor junction gated transistor, as an ambient temperature increases;
a AC-coupled charging capacitor coupled to the gate input of the wide bandgap semiconductor junction gated transistor when in use, wherein the AC-coupled gate charging capacitor is positioned parallel to the gate current limit resistor; and
a diode coupled to the gate current limit resistor and the AC-coupled charging capacitor on one end and an output of a gate drive chip on the other end, wherein when in use the diode lowers a gate voltage output from the gate drive chip applied to the gate input of the wide bandgap semiconductor junction gated transistor through the gate current limit resistor.
2. The gate drive circuit of claim 1, further comprising the wide bandgap semiconductor junction gated transistor.
3. The gate drive circuit of claim 2, wherein the wide bandgap semiconductor is selected from a group consisting of silicon carbide, gallium nitride and diamond.
4. The gate drive circuit of claim 2, wherein the wide bandgap semiconductor junction gated transistor comprises a Schottky gate or a P-N junction gate.
5. The gate drive circuit of claim 1, wherein the wide bandgap semiconductor junction gated transistor is a junction field effect transistor (JFET), vertical JFET (VJFET), static induction transistor (SIT), Metal Semiconductor Field Effect Transistor (MESFET), or a cascode JFET circuit.
6. The gate drive circuit of claim 1, wherein the gate drive chip is a controller chip used to control a metal-oxide semiconductor field-effect transistor (MOSFET) or IGBT.
7. The gate drive circuit of claim 1, wherein the diode is a Zener diode.
8. A gate drive circuit for a wide bandgap semiconductor junction gated transistor, comprising:
a gate current limit resistor coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use, wherein the gate current limit resistor limits a gate current provided to the gate input of the junction gated transistor;
a AC-coupled charging capacitor coupled to the gate input of the wide bandgap semiconductor junction gated transistor when in use, wherein the AC-coupled gate charging capacitor is positioned parallel to the gate current limit resistor;
a diode coupled to the gate current limit resistor and the AC-coupled charging capacitor on one end and an output of a gate drive chip on the other end, wherein when in use the diode lowers a gate voltage output from the gate drive chip applied to the gate input of the wide bandgap semiconductor junction gated transistor through the gate current limit resistor;
a shutoff voltage source;
a shutoff resistor coupled to the shutoff voltage source at one end and at another end coupled to the diode and the AC-coupled charging capacitor, wherein the shutoff voltage source and the shutoff resistor turn off the wide bandgap semiconductor junction gated transistor.
9. The gate drive circuit of claim 8, further comprising the wide bandgap semiconductor junction gated transistor.
10. The gate drive circuit of claim 9, wherein the wide bandgap semiconductor junction gated transistor comprises a Schottky gate or a P-N junction gate.
11. The gate drive circuit of claim 9, wherein the wide bandgap semiconductor junction gated transistor is a junction field effect transistor (JFET), vertical JFET (VJFET), static induction transistor (SIT), Metal Semiconductor Field Effect Transistor (MESFET), or a cascode JFET circuit.
12. The gate drive circuit of claim 9, wherein the wide bandgap semiconductor is selected from consisting of silicon carbide, gallium nitride and diamond.
13. A gate drive circuit for a wide bandgap semiconductor junction gated transistor, comprising:
a gate drive chip, wherein the gate drive chip receives an input signal and generates an output signal;
a diode coupled to the output signal of the gate drive chip;
a gate current limit resistor, wherein when the gate drive circuit is in use, the gate current limit resistor is coupled to the diode and a gate of the wide bandgap semiconductor junction gated transistor and the gate current limit resistor limits the gate current to a maximum value, at the gate input of the wide bandgap semiconductor junction gated transistor, as an ambient temperature increases; and
a AC-coupled charging capacitor, wherein when the gate drive circuit is in use, the AC-coupled charging capacitor is coupled to the diode and the gate current limit resistor at the gate of the junction gated transistor, wherein the AC-coupled charging capacitor is parallel to the gate current limit resistor.
14. The gate drive circuit of claim 13, wherein the gate drive chip is a controller chip used to control a metal-oxide semiconductor field-effect transistor (MOSFET) or IGBT.
15. The gate drive circuit of claim 13, wherein the diode is a Zener diode.
16. A gate drive circuit for a wide bandgap semiconductor junction gated transistor, comprising:
a gate current limit resistor coupled to a gate input of the wide bandgap semiconductor junction gated transistor when in use, wherein the gate current limit resistor limits a gate current provided to the gate input of the wide bandgap semiconductor junction gated transistor;
a AC-coupled charging capacitor coupled to the gate input of the wide bandgap semiconductor junction gated transistor when in use, wherein the AC-coupled charging capacitor is positioned parallel to the gate current limit resistor;
a gate drive chip, wherein the gate drive chip provides a voltage to the gate limit resistor and the AC-coupled charging capacitor, and wherein the wide bandgap semiconductor junction gated transistor is a Schottky diode or a P-N junction diode; and
a diode coupled to the gate current limit resistor and the AC-coupled charging capacitor on one end and an output from the gate drive chip on the other end, wherein the diode limits a gate voltage output from the gate drive chip applied to the gate input of the wide bandgap semiconductor junction gated transistor when in use, and wherein the diode is a Zener diode. Description
The invention relates generally to electronic devices, specifically to gate drive circuitry for a wide bandgap semiconductor device.
The need for electronic devices which operate at higher frequency, higher power, higher temperature and in harsh environments has increased. For example, sensor components in jet engines or airborne microwave devices require such durable and high performance devices. Devices made using wide bandgap semiconductor materials such as silicon carbide (SiC), gallium nitride (GaN), and diamond can exhibit these properties. Generally, semiconductors having an energy difference (or energy gap (Eg)) between the top of the valence band and the bottom of the conduction band typically greater than 2 electron volts (eV) are considered wide bandgap semiconductors. Such materials are generally chemically stable at high temperatures, have good thermal conductivity, a high breakdown field and a large electron saturation velocity.
Wide bandgap semiconductor junction gated transistors (e.g., a Junction Field Effect Transistor (JFET), static induction transistor (SIT), or Metal Semiconductor Field Effect Transistor (MESFET)) require specialized gate drive or control circuitry for proper operation. Applying conventional commercial-off-the-shelf (COTS) gate drive circuitry for MOSFETs and IGBTs as-delivered for wide bandgap semiconductor devices may not be practical. A wide bandgap semiconductor circuit or device may require low gate voltages (e.g., less than 5 V). Conventional COTS gate drive circuitry may not perform well when required to drive low gate voltages required by wide bandgap semiconductor junction gated transistors. Consequently, customized gate drive or control circuitry is needed for wide bandgap semiconductor devices. For cost and availability reasons, it is desirable to modify commercially and commonly available gate drive circuits to form the gate drive or control circuitry for wide bandgap semiconductor devices.
FIG. 1 illustrates a vertical junction field-effect transistor (VJFET) manufactured using a wide bandgap semiconductor.
FIG. 2 illustrates a VJFET configured in a cascode topology.
FIG. 3 is a graph illustrating the cascode topology device operation.
FIG. 4 shows a gate drive circuit for a wide bandgap semiconductor junction gated transistor, in accordance with an embodiment.
FIG. 5 is a simulation output of a model SiC JFET device circuit configured in accordance with an embodiment.
Various integrated or discrete devices can be configured using wide bandgap semiconductor materials. For example, a junction gated transistor such as a junction field effect transistor, a cascode switch or similar device may be manufactured using a wide bandgap semiconductor material. Such junction gated transistors manufactured using wide bandgap semiconductor material may offer better performance at higher operating temperatures as compared to conventional silicon (Si) based metal-oxide semiconductor field effect transistor (MOSFET) technology. Embodiments described herein provide gate drive or control circuitry for the wide bandgap semiconductor junction gated transistor. The gate drive circuitry turns the transistor on and off by applying a signal to the gate input, which controls a device current flowing from the drain to the source. Specialized control or drive circuitry is required to control a wide bandgap semiconductor junction gated transistor so that it operates at optimum performance with minimum power usage.
FIG. 1 illustrates one such junction gated transistor, a vertical junction field-effect transistor (VJFET) 100, that may be fabricated using a wide bandgap semiconductor, such as SiC, GaN, diamond or other wide bandgap semiconductor material. Although a VJFET 100 is described herein, a SIT, a JFET or MESFET, for example, may also be used. The VJFET 100 includes a source terminal 112 and an N+ source region 110. A channel 130 is disposed under the N+ source region 110, as shown. The channel region 130 separates P+ implant region 120 from a P+ implant region 115. The gates 111 and 113 may be formed from a metal that makes ohmic (non-rectifying) contact to the implanted P+ material, and are electrically connected (not shown) such that they form two parts of the same gate electrode. The channel region 130 is disposed adjacent to a N type drift region 140. The N type drift region 140 is disposed adjacent to N buffer 145, which is disposed adjacent to a substrate 150. As shown, a drain contact 160 is disposed adjacent to substrate 150.
In the VJFET 100, current flows from the drain 160 to the source 112, through the channel region 130. A thick, lightly-doped drift region 140 separates a high-voltage drain 160, of the device 100, from the gates 113, 111 and source 112. The spacing W between the P+ gate regions 115 and 120, the doping of the channel region 130, and the voltage applied to these regions control the amount of current that can flow through the channel region 130. If the spacing W is large enough, the device 100 is a “normally-on” device, i.e., depletion mode, and current flows through the channel 130 when the voltage applied across the gate and the source (VGS)=0 V. To turn a “normally on” device off, a negative VGS is applied, causing depletion regions from the reverse-biased P-N junctions to pinch-off the channel 130. Alternatively, if the P+ regions 115 and 120 are close together (i.e., the spacing W is small), the built-in depletion regions will pinch-off the channel 130 with no applied bias voltage (VGS=0 V), resulting in a “normally off”, i.e., enhancement mode, VJFET device. A positive voltage applied to the gate of a “normally off” VJFET device will shrink the depletion regions allowing current to flow through the channel 130. Thus, the gate 120 to gate 115 spacing W and the doping in channel 130 determine if the device is a “normally on” or “normally-off” device. A VJFET may contain hundreds (or thousands) of transistors 100 repeating the structure shown in FIG. 1, all connected in parallel to obtain high currents.
The junction field effect transistor (JFET) technology may be applied, for example, as a high-voltage normally-off JFET or by combining normally-on and normally-off JFETs into a cascode topology. The cascode topology, whether integrated or discrete, allows a device designer to yield a normally-off circuit, while benefiting from increased blocking voltage that can be achieved using SiC over silicon (Si) and maintain competitive values of the on-state resistance (Ron), which should be as low as possible.
FIG. 2 illustrates a cascode circuit 201 that includes two VJFETs 205 and 207 coupled to a load 220. VJFETs 205 and 207 may be fabricated using a wide bandgap semiconductor, such as SiC, GaN, diamond or other wide bandgap semiconductor material. The cascode circuit 201 configuration includes a low-voltage (blocking capability <100 V) “normally-off” (Noff) LV VJFET 205 connected in series with a high-voltage (blocking capability >300 V) “normally-on” (Non) HV VJFET 207. The cascode circuit 201 can be implemented either with two discrete devices or monolithically on a single chip. As shown, the source 206 of HV VJFET 207 is coupled to the drain 209 of the LV VJFET 205. The drain 208 of the HV VJFET 207 is coupled to one end of a load 220. The gate 213 of the HV VJFET 207 is connected to the source 215 of the LV VJFET 205 device. A voltage may be applied at gate 211 to control the cascode circuit.
In the off state, the LV VJFET 205 (normally off) initially blocks the flow of current and the voltage drop across the LV VJFET 205 may be between 10 to 100 V. The voltage across the LV VJFET 205, applied to the gate 213 of the HV VJFET 207 device, reverse-biases the gate-source junction of the HV VJFET 207, which at some low voltage (e.g., VGS=−20 V) turns off. The HV VJFET 207 then blocks the rest of the increasing high voltage (e.g., between 300V-10 kV) across the cascode device 201. When sufficient positive voltage is applied to the gate 211 of the LV VJFET 205, the device turns “on” and the gate voltage to the gate of the HV VJFET 207 is such that the device is biased “on.” Thus, the cascode topology including VJFETs fabricated using wide bandgap semiconductor material (e.g., SiC) provides high voltage blocking capability while maintaining reasonable values of on-state resistance.
The cascode topology, as described above, is preferred if a normally-off device with voltage blocking capability above approximately 300V is desired because the channel region 130 (i.e., the spacing W between the P+ gates) resistance of a single normally-off JFET begins to dominate the on-resistance for blocking voltages above 300V. Moreover, since the drift region of the high voltage device dominates the overall circuit resistance, the cascode circuit topology is desirable for a power switch device. Using a wide bandgap semiconductor normally-on VJFET device as the high voltage (HV) device, a designer can obtain low values of on-resistance (Ron) for the entire cascode circuit, while simultaneously acquiring a high blocking voltage. For example, by using SiC, an order of magnitude increase in the blocking voltage layer doping density and a decrease in the blocking voltage layer thickness by 1/10th can be obtained due to the breakdown electric field of SiC being 10 times higher than Si, hence yielding low Ron values for the SiC normally-on device.
The normally-off LV VJFET 205, shown in FIG. 2 has a low on-state resistance (Ron) value. In one example, the LV JFET 205 may be designed to block approximately <100 V, thus providing sufficient reverse gate-source bias on the high voltage device (e.g., HV VJFET 207) to promote current pinch-off. Conventionally, the low voltage device (e.g., LV JFET 205) is a low voltage Si MOSFET. However, as described herein, the low voltage Si MOSFET is replaced with a low voltage wide bandgap semiconductor device, such as a normally-off VJFET manufactured using SiC, which can operate at higher temperatures. By using a wide bandgap semiconductor, e.g., SiC, and the VJFET device technology, the cascode circuit may provide 1) a device having a wide energy band gap that operates at higher temperatures than conventional MOS devices; 2) the higher breakdown electric field in wide bandgap semiconductors that allows for a low Ron in both the normally-off device and normally-on device; and 3) the elimination of the low voltage Si MOSFET that can greatly reduces the gate capacitance of the cascode circuit.
The cascode configuration as shown in FIG. 2 has been experimentally investigated and measured output characteristics are shown in the graph of FIG. 3. FIG. 3 shows the drain voltage (V) (i.e., at drain 208) of the circuit 201 (X-axis) vs. the drain current (A) (i.e., through drain 208) (Y-axis), as a function of VGS. As shown, VGS applied to the gate-source junction of the normally-off device LV JFET 205 directly affects the output characteristics of the cascode circuit 201. At VGS≧2 V, the normally-off device is not affected and the drain current is at its minimum, as shown by curve 300. However, the P-N junction of the normally-off gate-to-source diode becomes fully conducting at approximately VGS≧2.5 V. Once the P-N junction of the normally-off gate-to-source diode becomes fully conducting, only minimal benefit in the on-resistance of the device occurs as VGS increases from 2.5 V (curve 301) to 3V (curve 302), as shown in FIG. 3. Therefore, to save power and limit the size of a gate drive circuit needed to control the cascode circuit (or VJFET) or other wide bandgap semiconductor junction gated transistors, it is advantageous to limit the gate voltage to values such that the P-N junction does not fully turn-on, yet the VGS is at the maximum possible voltage prior to the P-N junction turn-on to ensure a low on-resistance. Therefore, for a given device active area, a gate-source current can be chosen such that the maximum voltage is always on the gate-source junction during the on-state no matter what the temperature.
In addition, during device “turn-on” and “turn-off” transients, the input gate-source and gate-drain capacitances must be charged or discharged as fast as possible for low device turn-on and turn-off speeds. Therefore, limiting the input gate current to a single value slows down the turn-on speed of the transistor or device.
FIG. 4 shows a gate drive circuit 400 for a wide bandgap semiconductor junction gated transistor, in accordance with an embodiment. The gate drive circuit 400 is coupled to a device under test (DUT) 410, which may be any type of wide bandgap semiconductor junction gated transistor (e.g., a VJFET, JFET, SIT, MESFET, or cascode JFET). The junction gated transistor may be a Schottky gated or a P-N junction gated transistor. The wide bandgap semiconductor may be SiC, GaN, diamond or any other wide bandgap semiconductor. The gate drive circuit 400 limits current delivered to the DUT 410 in the on-state, and provides the transient charging and discharging currents needed for the gate-source capacitance.
The gate drive or control circuit 400 includes a gate drive chip 420. The gate drive chip 420 may be any type of transistor gate driver, such as a MOSFET gate driver or a insulated gate bipolar transistor (IGBT) gate driver. In one example, the gate driver 420 may be a gate driver manufactured by Linear Technologies, Inc., such as LTC4441 or LTC4441-1, or the gate driver 420 may be any other type of gate driver. As shown, the resistor (R1) 480 is coupled to resistor (R2) 485, the regulator feedback input pin (FB), the line regulator output pin (DRVcc) and capacitor (C2) 470. The resistor 485 is also coupled to the regulator feedback input pin on one end and signal ground (SGND) on the other end. The capacitor 470 is further coupled to the driver ground pin (PGND) and SGND. Resistors 480 and 485 set the output drive voltage (OUT), which may be limited to a minimum voltage (e.g., 5 V), for example. The voltage in (“Vin”) pin provides the main supply input and the IN pin provides the driver logic input. The enable/shutdown (EN/SHDN) input pin is also coupled to the Vin pin.
In accordance with an embodiment, the driver output pin (OUT) is coupled to diode (D1) 430, which is coupled to capacitor (C1) 435 and resistor (R3) 445. The diode 430 may also be coupled to a shutoff voltage source 460 through shutoff resistor 450. The shutoff voltage source 460 may provide a negative shutoff voltage to turn off the DUT 410 (i.e., the semiconductor junction gated transistor). The capacitor 435 and resistor 445 are coupled in parallel to the diode 430 on one end and the DUT 410 on the other end, as shown. The capacitor 435 and resistor 445 are typically coupled to the gate input (not shown) of the DUT 410. The resistor 445 is a gate current limit resistor that limits the gate current (IG) provided to the gate input of the DUT 410. The gate current limit resistor may limit the gate current input to the DUT 410 even if the ambient temperature increases (i.e., in high temperature environments). The capacitor 435 is a AC-coupled charging capacitor which charges and discharges the gate input capacitance during switching events.
In order to ensure stable operation of the gate drive chip 420, the input voltage V1 489 needs to remain above a critical value. On the other hand, the gate input voltage to the DUT 410 can be much less than the critical value of the input voltage V1 489 needed by the gate drive chip 420 and it becomes necessary to reduce the output voltage by means of level shifting. In an embodiment of the invention, voltage level shifting is achieved with the diode 430, which may be a Zener diode or other type of diode. The shutoff voltage 460 can provide the turn off voltage for the DUT 410 if a more negative turn off voltage is desired. The value of resistor 445 may be set to limit the current of the parasitic P-N gate to source diode regardless of the temperature. The output voltage (OUT) of the gate drive chip 420 is used to approximate the size of the current limiting resistor 445 using the formula Rlimit=VOUT/Igate-source. To achieve a high peak current for fast DUT 410 turn-on, capacitor 435 allows for a capacitive coupled gate drive and can be sized for the appropriate turn on speed by sizing the capacitor 435 equal to the input gate capacitance of the DUT 410. The charged or discharged capacitor 435 can be used to charge or discharge the input capacitance of the DUT 410 during the switching process. It should be noted that the parasitic diode on the gate of the transistor (e.g., a LV VJFET) consumes any excess current which the charge capacitor 435 emits during switching in the event the capacitor 435 is sized larger than necessary.
For cost and availability reasons, it is desirable to configure a SiC cascode gate drive from a commercial gate drive circuits. However, conventional commercial gate drive circuits may have to be specially configured to achieve the required output voltage and current for optimal device performance. Changes in temperature can result in a lower parasitic P-N junction turn-on voltage and may result in the diode 430 turning on at voltages much less than 2.5 V, for the case of SiC. However, the gate current limit resistor 445 is set to handle such temperature changes.
Typically, conventional Si gate drives can provide up to 20 V of gate driving capability and possibly up to 12 A of peak current capability. This peak current is required to charge the gate capacitances of Si devices as quickly as possible to allow for fast turn on speed. As seen in FIG. 3, SiC devices may only require 2.5 V of gate voltage at room temperature to fully operate. Driving the device with anything more than 2.5 V results in forward biasing the gate-to-source parasitic P-N junction diode and conducting large amounts of gate current. Most conventional gate drive circuits cannot handle this much continuous gate current and do not perform well when the input voltage V1 489 is lowered to less than 5 V to attempt to drive gate voltages less than 5 V. Using a conventional gate drive circuit with the output set to 5V would turn on the P-N junction diode, thus conducting large amounts of gate current through the SiC device and possibly destroying the gate drive chip.
FIG. 5 is a simulation output of a model SiC JFET device circuit configured in accordance with an embodiment. Upper graph 510 shows the current being drawn by the parasitic gate-source P-N gated transistor at steady state using two different resistors (e.g., a “small” gate resistor and a “large” gate resistor). As evident by comparing waveforms 515 and 520, a 10� reduction in gate current can be achieved by increasing the size of the current limiting resistor R3, thus resulting in lower power consumption. The resistor is sized to limit gate current, while maintaining low on-state resistance. The charging of the JFET input gate capacitance when the device is turned on 555, as shown by lower graph 550, is accomplished by the capacitor C1 435 despite the current limit imposed by resistor 435.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5936360 *Apr 8, 1998Aug 10, 1999Ivice Co., Ltd.Brightness controller for and method for controlling brightness of a discharge tube with optimum on/off times determined by pulse waveformUS6218891 *Jul 28, 2000Apr 17, 2001Lucent Technologies Inc.Integrated circuit including a driver for a metal-semiconductor field-effect transistorUS6661276 *Jul 29, 2002Dec 9, 2003Lovoltech Inc.MOSFET driver matching circuit for an enhancement mode JFETUS20060087349 *Oct 26, 2005Apr 27, 2006Bird Ross WCircuit with high power density applicability* Cited by examinerNon-Patent CitationsReference1Kelley, R.L., et al., "Inherently Safe DC/DC Converter Using a Normally-On SiC JFET", Jan. 2005, IEEE, pp. 1561-1565.2 *Naefe, J.E.; Johnson, R.W.; Grzybowski, R.R., "High-temperature storage and thermal cycling studies of thick film and wirewound resistors," Components and Packaging Technologies, IEEE Transactions on , vol. 25, No. 1, pp. 45-52, Mar. 2002.* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS8228114Sep 30, 2010Jul 24, 2012Arkansas Power Electronics International, Inc.Normally-off D-mode driven direct drive cascodeUS9007081 *May 21, 2012Apr 14, 2015Mitsubishi Electric CorporationJig for use in semiconductor test and method of measuring breakdown voltage by using the jigUS9166048 *Sep 16, 2013Oct 20, 2015Sensor Electronic Technology, Inc.Lateral/vertical semiconductor deviceUS20130106453 *May 21, 2012May 2, 2013Mitsubishi Electric CorporationJig for use in semiconductor test and method of measuring breakdown voltage by using the jigUS20140077311 *Sep 16, 2013Mar 20, 2014Sensor Electronic Technology, Inc.Lateral/Vertical Semiconductor DeviceWO2013071019A1 *Nov 9, 2012May 16, 2013Rutgers, The State University Of New JerseyA voltage-gated bipolar transistor for power switching applications* Cited by examinerClassifications U.S. Classification327/427, 327/109, 327/112, 327/110, 327/111, 327/108International ClassificationH03K17/687Cooperative ClassificationH03K17/145, H01L2924/0002, H03K2217/0036, H03K17/08122, H01L29/8083, H03K17/08128, H03K17/6871European ClassificationH01L29/808B, H03K17/0812E, H03K17/0812B, H03K17/14B, H03K17/687BLegal EventsDateCodeEventDescriptionAug 23, 2007ASAssignmentOwner name: NORTHROP GRUMMAN SYSTEMS CORPORATION, CALIFORNIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:REICHL, JOHN VINCENT;BULGHER, DAVID EVERETT;MCNUTT TY R.;REEL/FRAME:019765/0423;SIGNING DATES FROM 20070726 TO 20070814Owner name: NORTHROP GRUMMAN SYSTEMS CORPORATION, CALIFORNIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:REICHL, JOHN VINCENT;BULGHER, DAVID EVERETT;MCNUTT TY R.;SIGNING DATES FROM 20070726 TO 20070814;REEL/FRAME:019765/0423Jan 7, 2011ASAssignmentOwner name: NORTHROP GRUMMAN SYSTEMS CORPORATION, CALIFORNIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:NORTHROP GRUMMAN CORPORATION;REEL/FRAME:025597/0505Effective date: 20110104Feb 21, 2014FPAYFee paymentYear of fee payment: 4RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services


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XSLT and XPATH: A Guide to XML Transformations book by Zarella L. Rendon, John Robert Gardner | edition available edition | Alibris Books
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Using XSLT and XPath, developers can take full advantage of virtually any XML data in both Web applications and printed documents. Guide to XML Transformations: XSLT & XPath delivers a thorough understanding of the concepts and inner workings of Xpath and the XSLT processing model. Leading XSL experts Zarella Rendon and John Robert Gardner teach XSLT and XPath through extensive example code, explained line by line. Guide to XML Transformations assumes basic HTML and/or skills, but no familiarity with programming concepts. ... Read More
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text: Loading...DENVER, CO - NOVEMBER 23: Randy Foye #4 of the Denver Nuggets shoots against Jose Calderon #8 of the Dallas Mavericks on November 23, 2013 at the Pepsi Center in Denver, Colorado. NOTE TO USER: User expressly acknowledges and agrees that, by downloading and/or using this Photograph, user is consenting to the terms and conditions of the Getty Images License Agreement. Mandatory Copyright Notice: Copyright 2013 NBAE (Photo by Bart Young/NBAE via Getty Images)Back to galleryPhoto 34 of 59Previous | Next


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at the feinstein bill? that is what it does. they will turn the universal, i think, check on the law-abiding into a universal registry of law-abiding people and they do not want that. that is the last thing they want. >>chris: you take something that is here and you say dill go all the way over there, there is no indication. i can understand you saying that is a threat but nothing the administration says indicate they will have a universal registry. >>guest: and obama was not a tax until they needed it to be a tax. i don't think you can trust these people. feinstein has said, they will go door-to-door and pick them up. can i talk about what would work? >>chris: a couple questions and we will get to it. the murder, today, one of the things that concerns people, each day we talk about a shooting, oftentimes mass shootings, day after day after day, and the frustration is, you don't think that answering or limiting guns has anything to do with it. i understand there are some things you think do work and we will talk about that the murder yesterday of a former navy seal chris kyle, a man KTVU - FOX News Sunday With Chris Wallace
you look at the feinstein bill, he is supporting? that is exactly what it does. i mean, i think what they'll do is turn the universal check on the law-abiding into a universal registry of law-abiding people and law-abiding people don't want that. i mean, my -- >> absolutely do not -- forgive me, sir, you take something that is here, and you say it will go all the way over there. there is no indication, i mean, i can understand you are saying, that is a threat but there is nothing anyone in the administration has said that indicates they are going to have a universal registry. >> and obamacare wasn't a tax until they needed it to be a tax. >> chris: the supreme court decided that. >> you cannot trust these people. my god, dianne feinstein, said, if i could go door-to-door and pick 'em all up, i would do it. can i tell you what i think will work -- >> i'll ask you a couple of questions, the murder today, one of the things that concerns people, it seems every day we talk about a shooting. oftentimes, mass shooting. >> right. >> chris: day after day after day and the frustration is you d FOXNEWSW - FOX News Sunday With Chris Wallace
that. >> didianne feinstein said if i could o go door to door and pick them all up i would do it. can i say one more. >> chris: i have one more question. forgive me, sir, i'm going to conduct the interview. every day we talk about a shooting. often times mass shooting day-after-day after day and the frustration s you don't think that limiting guns has anything to do with that. i understand there is some things you think do work and we will talk about that. the murder yesterday of former navy seal chris kyle. this was a man who wrote american sniper. the man credited with the largest number of confirmed kills of any american soldier ever. he and another man gunned down at a texas gun range. >> if you want to stop violence in this country here is what you do. first, if you want to protect our kids you put armed security in schools. i'm not talking about arming teachers. i'm talking about police officers and certified professional security people. there is not a parent that sends off their kid to school that wants the kids to be unprotected. just in atlanta this past week armed security st Excerpts 0 to 8 of about

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