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Patent US6266279 - Nonvolatile semiconductor memory device, method for reading data from the ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsAn object is to obtain a nonvolatile semiconductor memory device which can achieve a reduction in processing time required for data writing operation and an increase in storage density through the use of multi-valued MOS transistors. In operation for writing data into cells, the amount of charge injected...http://www.google.com/patents/US6266279?utm_source=gb-gplus-sharePatent US6266279 - Nonvolatile semiconductor memory device, method for reading data from the nonvolatile semiconductor memory device, and method for writing data into the nonvolatile semiconductor memory deviceAdvanced Patent SearchPublication numberUS6266279 B1Publication typeGrantApplication numberUS 09/621,356Publication dateJul 24, 2001Filing dateJul 21, 2000Priority dateFeb 17, 2000Fee statusPaidPublication number09621356, 621356, US 6266279 B1, US 6266279B1, US-B1-6266279, US6266279 B1, US6266279B1InventorsYoshimasa YoshimuraOriginal AssigneeMitsubishi Denki Kabushiki KaishaExport CitationBiBTeX, EndNote, RefManPatent Citations (5), Referenced by (13), Classifications (20), Legal Events (5) External Links: USPTO, USPTO Assignment, EspacenetNonvolatile semiconductor memory device, method for reading data from the nonvolatile semiconductor memory device, and method for writing data into the nonvolatile semiconductor memory deviceUS 6266279 B1Abstract An object is to obtain a nonvolatile semiconductor memory device which can achieve a reduction in processing time required for data writing operation and an increase in storage density through the use of multi-valued MOS transistors. In operation for writing data into cells, the amount of charge injected into the floating gates is controlled so as to set the threshold voltages of the MOS transistors at all different values. When reading data from the cells, the data is read by determining whether the threshold voltages of the MOS transistors are higher or lower relative to each other.
What is claimed is: 1. A nonvolatile semiconductor memory device which comprises a memory cell array in which a plurality of memory cells are arranged,
wherein each said memory cell comprises a transistor whose threshold voltage can be variably set, in said memory cell array, one unit of data is formed by a plurality of said memory cells in a group, and said threshold voltages of said transistors in said plurality of memory cells belonging to said one unit of data are all set at different values. 2. The nonvolatile semiconductor memory device according to claim 1, wherein said threshold voltage of each said transistor can be set at N values (N is a natural number of 2 or more), and
said one unit of data is formed by a group of M of said memory cells (M is a natural number of not less than 2 nor more than N). 3. The nonvolatile semiconductor memory device according to claim 2, wherein N=M.
4. The nonvolatile semiconductor memory device according to claim 3, wherein N is 9 or more.
5. The nonvolatile semiconductor memory device according to claim 2, wherein said M memory cells are formed adjacent to each other in the substrate on which said nonvolatile semiconductor memory device is formed.
6. A method for reading data from said nonvolatile semiconductor memory device according to claim 1, comprising the steps of:
(a) specifying one reference memory cell from among said plurality of memory cells belonging to said one unit of data; (b) determining whether said threshold voltages of said transistors in said memory cells other than said reference memory cell are relatively higher or lower than said threshold voltage of said transistor in said reference memory cell; and (c) repeatedly performing said steps (a) and (b) until all of said plurality of memory cells belonging to said one unit of data have been specified as said reference memory cell. 7. The method for reading data from said nonvolatile semiconductor memory device according to claim 6,
wherein said nonvolatile semiconductor memory device further comprises a shorting circuit for selectively short-circuiting said transistors between their control gate and drain, and in said step (a), said memory cell which is shorted between said control gate and said drain by said shorting circuit is specified as said reference memory cell. 8. A method for writing data into said nonvolatile semiconductor memory device according to claim 1, wherein
each said transistor has a control gate and a floating gate, said threshold voltage is variably set in accordance with the amount of charge injected to said floating gate, and at least one of the time for injecting said charge into said floating gate and a voltage value applied to said control gate to inject said charge into said floating gate is set at different values relative to each other among said plurality of memory cells belonging to said one unit of data.
The present invention relates to nonvolatile semiconductor memory devices, and particularly to a nonvolatile semiconductor multi-valued memory device in which one unit of data is formed by a group of memory cells (hereinafter simply referred to as �cells�) each having a transistor whose threshold voltage can be set at multiple values. The present invention also relates to a method for reading data from the nonvolatile semiconductor memory device and a method for writing data into the nonvolatile semiconductor memory device.
A conventional nonvolatile semiconductor multi-valued memory device is disclosed in Japanese Patent Application Laid-Open No.9-91971 (1997), for example. FIGS. 9A to 9D are diagrams used to explain a method for writing data into the conventional nonvolatile semiconductor multi-valued memory device described in the reference. FIGS. 9A to 9D show an example in which four MOS transistors 101 to 104 are connected to one word line W and four cells C1 to C4 form a unit of data. The MOS transistors 101 to 104 each have a control gate and a floating gate, where the threshold voltage Vth can be set at four values Vth1 to Vth4 (Vth1<Vth2<Vth3<Vth4) according to the amount of charge exiting in the floating gate. Its writing operation is now described in an example in which the threshold voltages Vth of the MOS transistors 101, 102, 103 and 104 are set at Vth4, Vth3, Vth2 and Vth1, respectively.
First, as shown in FIG. 9(A), the threshold voltages Vth of the MOS transistors 101 to 104 are all set at the highest value Vth4. At this time, electrons are sufficiently stored in the floating gates of the MOS transistors 101 to 104. Next, as shown in FIG. 9(B), a given amount of electrons are discharged from the floating gates of the MOS transistors 102 to 104 to set the threshold voltages Vth of the MOS transistors 102 to 104 at Vth3, which is followed by a verification. Next, as shown in FIG. 9(C), a given amount of electrons are discharged from the floating gates of the MOS transistors 103 and 104 to set the threshold voltages Vth of the MOS transistors 103 and 104 at Vth2, which is followed by a verification. Finally, as shown in FIG. 9(D), a given amount of electrons are discharged from the floating gate of the MOS transistor 104 to set the threshold voltage Vth of the MOS transistor 104 at Vth1, which is followed by a verification.
FIG. 10 is a diagram used to explain a method for reading data from the conventional nonvolatile semiconductor multi-valued memory device described in the reference mentioned above. In the reading operation in the conventional nonvolatile semiconductor multi-valued memory device, an MOS transistor whose threshold voltage Vth is in the range of V6 or higher is regarded as an MOS transistor having the threshold voltage Vth4, an MOS transistor whose threshold voltage Vth is in the range of V4 to V5 is regarded as an MOS transistor having the threshold voltage Vth3, an MOS transistor whose threshold voltage Vth is in the range of V2 to V3 is regarded as an MOS transistor having the threshold voltage Vth2, and an MOS transistor whose threshold voltage Vth is in the range of V1 or lower is regarded as an MOS transistor having the threshold voltage Vth1.
As explained above, the conventional nonvolatile semiconductor multi-valued memory device manages and controls the threshold voltages of a plurality of MOS transistors by using the absolute voltage values (absolute values) Vth1, Vth2, Vth3 and Vth4 (or V1, V2, V3, V4, V5 and V6). When a plurality of MOS transistors are formed on a chip, all MOS transistors do not have completely the same physical characteristics; actually, there are variations in characteristics among the MOS transistors. Accordingly, some MOS transistors are quick at writing (that is to say, for the same writing stress, some MOS transistors allow a larger amount of charge to be discharged from or injected into the floating gate than other MOS transistors, so that the threshold voltage shifts more largely) and some MOS transistors are slow at writing.
Accordingly, as in the conventional nonvolatile semiconductor multi-valued memory device, controlling the threshold voltages of a plurality of MOS transistors having different characteristics by using absolute voltage values requires repeating the above-described flow of: with the write time divided into a plurality of small unit times, applying a given write stress to shift the threshold voltages for each small unit time, verifying the threshold voltages each time, and applying a write stress again if the threshold voltages have not attained a defined range. The conventional nonvolatile semiconductor multi-valued memory device thus has the problem that the processing takes time especially in data writing operation.
In the nonvolatile semiconductor multi-valued memory devices, it is possible to increase the storage capacity per unit area (i.e. storage density) by increasing the number of multiple values of each MOS transistor. However, when the number of multiple values of the MOS transistors is increased in the above-described conventional nonvolatile semiconductor multi-valued memory device, the writing operation takes a still longer time and the threshold voltage of the MOS transistors must be divided into a larger number of smaller ranges, leading to processing speed reduction and accuracy reduction in data processing. It is then difficult to enhance the storage density by using multiple-valued MOS transistors.
SUMMARY OF THE INVENTION According to a first aspect of the present invention, a nonvolatile semiconductor memory device comprises a memory cell array in which a plurality of memory cells are arranged, wherein each memory cell comprises a transistor whose threshold voltage can be variably set and one unit of data is formed by a plurality of memory cells in a group in the memory cell array, and wherein the threshold voltages of the transistors in the plurality of memory cells belonging to the one unit of data are all set at different values.
Preferably, according to a second aspect of the invention, in the nonvolatile semiconductor memory device, the threshold voltage of each transistor can be set at N values (N is a natural number of 2 or more) and the one unit of data is formed by a group of M memory cells (M is a natural number of not less than 2 nor more than N).
Preferably, according to a third aspect of the invention, N=M in the nonvolatile semiconductor memory device.
Preferably, according to a fourth aspect of the invention, in the nonvolatile semiconductor memory device, the M memory cells are formed adjacent to each other in the substrate on which the nonvolatile semiconductor memory device is formed.
A fifth aspect of the present invention is directed to a method for reading data from the nonvolatile semiconductor memory device of the invention, and the method comprises the steps of: (a) specifying one reference memory cell from among the plurality of memory cells belonging to the one unit of data; (b) determining whether the threshold voltages of the transistors in the memory cells other than the reference memory cell are relatively higher or lower than the threshold voltage of the transistor in the reference memory cell; and (c) repeatedly performing the steps (a) and (b) until all of the plurality of memory cells belonging to the one unit of data have been specified as the reference memory cell.
Preferably, according to a sixth aspect of the present invention, in the method for reading data from the nonvolatile semiconductor memory device of the invention, the nonvolatile semiconductor memory device further comprises a shorting circuit for selectively short-circuiting the transistors between their control gate and drain, and in the step (a), a memory cell which is shorted between the control gate and the drain by the shorting circuit is specified as the reference memory cell.
A seventh aspect of the invention is directed to a method for writing data into the nonvolatile semiconductor memory device of the invention, wherein each transistor has a control gate and a floating gate and the threshold voltage is variably set in accordance with the amount of charge injected to the floating gate, and wherein at least one of the time for injecting the charge into the floating gate and a voltage value applied to the control gate to inject the charge into the floating gate is set at different values relative to each other among the plurality of memory cells belonging to the one unit of data.
According to the device of the first aspect of the invention, the threshold voltages of a plurality of transistors are set at all different values among a plurality of memory cells forming one unit of data. Accordingly, in the operation of reading data, data can be read easily by comparing the threshold voltages of the transistors with each other to see whether they are higher or lower relative to each other. Further, in the operation of writing data, data can be written in a shorter time by one writing operation just by establishing the relation among the threshold voltages of the MOS transistors as to whether they are higher or lower relative to each other.
In the plurality of memory cells forming one unit of data, the threshold voltages of the transistors are set merely to establish the relation as to whether they are higher or lower relative to each other, and the relation among relative values is not affected much by the variations in physical characteristics among the transistors. Accordingly, the number of multiple values of the transistors can be easily increased and therefore a nonvolatile semiconductor memory device with larger capacity can be obtained easily.
According to the device of the second aspect of the invention, when the threshold voltage of each transistor can be set at N levels, one unit of data is formed by a group composed of M memory cells, where M is equal to or smaller than N. Accordingly, in a plurality of memory cells forming one unit of data, the threshold voltages of the plurality of transistors can be set at all different values.
According to the device of the third aspect of the invention, when the threshold voltage of each transistor can be set at N levels, one unit of data is formed by a group of N memory cells, so that the storage capacity per unit area can be maximized.
According to the device of the fourth aspect of the invention, the plurality of memory cells forming one unit of data are formed adjacent to each other, which reduces variations among the plurality of transistors contained in the plurality of memory cells which are caused in manufacture process depending on the position in the substrate.
According to the method of the fifth aspect of the invention, whether the threshold voltages of the transistors other than that in the reference memory cell are higher or lower than the threshold voltage of the transistor in the reference memory cell is determined not by using absolute voltage values but by simply comparing them with each other. Accordingly, this determination can be made easily and the processing time can be reduced.
According to the method of the sixth aspect of the invention, the reference memory cell can be specified by simple structure and operation using the shorting circuit.
According to the method of the seventh aspect of the invention, the relation among the threshold voltages of the transistors as to whether they are higher or lower relative to each other can be established by one writing operation.
The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a nonvolatile semiconductor memory device which can achieve a reduction in processing time especially in data writing operation and an increase in storage density through the use of multi-valued MOS transistors. Another object of the present invention is to obtain a method for reading data from the nonvolatile semiconductor memory device and a method of writing data into the nonvolatile semiconductor memory device.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a circuit diagram showing the entire structure of a nonvolatile semiconductor memory device according to a preferred embodiment of the present invention.
FIG. 2 is a graph showing the gate voltage versus drain current characteristic of an MOS transistor whose threshold voltage can be set at four values.
FIGS. 3A to 3D are diagrams used to explain the operation of reading data from cells C1 to C4.
FIG. 4 is a circuit diagram showing a specific example of the structure of the peripheral circuit.
FIG. 5 is a diagram showing the relation among voltages to be applied to the electrodes of an MOS transistor to write data.
FIG. 6 is a timing chart showing the waveforms of write pulses to be applied between the control gate and drain of the MOS transistor when writing data.
FIG. 7 is a timing chart showing the waveforms of write pulses of another type to be applied between the control gate and drain of the MOS transistor when writing data.
FIG. 8 is a diagram showing the number of representations which can be expressed with one data unit, where the number of multiple values, N, of the MOS transistors and the number of cells, M, in one digit are varied under the condition of N=M.
FIGS. 9A to 9D are diagrams used to explain a method of writing data in a conventional nonvolatile semiconductor multi-valued memory device.
FIG. 10 is a diagram used to explain a method of reading data in the conventional nonvolatile semiconductor multi-valued memory device.
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention relates to a nonvolatile semiconductor multi-valued memory device in which one unit of data (hereinafter referred to as �one digit�) is formed by a group of cells each having an MOS transistor capable of setting its threshold voltage at multiple values. For simplicity of the description, the nonvolatile semiconductor multi-valued memory device will be described in an example in which one digit is composed of a group of four cells and each cell has an MOS transistor capable of setting its threshold voltage at four values.
FIG. 1 is a circuit diagram showing the entire structure of a nonvolatile semiconductor memory device according to a preferred embodiment of the invention. The memory cell array is sectioned into a plurality of groups 21 to 2 m each forming one digit (m is a natural number equal to or larger than 3 in the example shown in FIG. 1). Its structure and operation will now be described referring to the group 21.
The group 21 is composed of four cells C1 to C4. The cells C1 to C4 respectively include MOS transistors 10 to 13 each having a control gate and a floating gate. The control gates of the MOS transistors 10 to 13 are connected to the word line W1 in common. It is desired that the four cells C1 to C4 forming one digit are formed adjacent to each other in the chip. This reduces the variations among the MOS transistors 10 to 13 which are caused in manufacture process depending on their position in the chip. As a result, the manufacture yield can be enhanced to reduce the cost.
The peripheral circuit 1 has a function as a constant current source and voltage sense portion. A plurality of bit lines are connected to the peripheral circuit 1. FIG. 1 only shows four bit lines B1 to B4. MOS transistors 41 to 44 for selecting a reference cell in data reading operation have their respective first electrodes (sources in the case of PMOS) connected respectively to the bit lines B1 to B4. The second electrodes (drains in the case of PMOS) of the MOS transistors 41 to 44 are connected to the signal line 50. MOS transistors 51 to 5 m for selecting a desired word line in data reading operation have their respective first electrodes (sources in the case of PMOS) connected to the signal line 50. The second electrodes (drains in the case of PMOS) of the MOS transistors 51 to 5 m are connected to the word lines W1 to Wm, respectively.
MOS transistors 31 to 34 have their respective first electrodes (sources in the case of PMOS) connected to the bit lines B1 to B4, respectively. The second electrodes (drains in the case of PMOS) of the MOS transistors 31 to 34 are connected to the drains of the MOS transistors 10 to 13, respectively. The sources of the MOS transistors to 13 are connected to the first electrodes (sources in the case of PMOS) of MOS transistors 61 to 64 through signal lines 71 to 74, respectively. The second electrodes (drains in the case of PMOS) of the MOS transistors 61 to 64 are connected to the signal line 80.
FIG. 2 is a graph showing the gate voltage versus drain current characteristic of an MOS transistor whose threshold voltage can be set at four values. The threshold voltage of the MOS transistor can be recognized as the gate voltage value exhibited when the drain current is at a certain value I0. In the example shown in FIG. 2, the threshold voltage of the MOS transistor can be set at four values Vth1 to Vth4 (Vth1<Vth2<Vth3<Vth4). While the threshold voltage Vth1 corresponds to a state in which a minimum amount of charge exists in the floating gate after data write operation is finished, the threshold voltage Vth4 corresponds to a state in which a maximum amount of charge exists in the floating gate after data write operation is finished.
When writing data into the cells C1 to C4, the amount of charge injected into the floating gates is controlled so that the threshold voltages of the MOS transistors 10 to 13 all differ from each other. In this example, it is assumed that the threshold voltages of the MOS transistors 10, 11, 12 and 13 are set at Vth2, Vth1, Vth3 and Vth4, respectively. When a group of four cells form one digit and each cell has an MOS transistor capable of setting its threshold value at four values as in this example, the number of states, D, which one digit can take (i.e. the number of representations which can be expressed with one data unit) is D=4�3�2�1=24.
FIGS. 3A to 3D are diagrams illustrating operation of reading data from the cells C1 to C4. The data reading operation will now be described referring to FIGS. 1 and 3. First, one reference cell is specified from among the cells C1 to C4. Suppose that the cell C1 is specified. Next, the MOS transistor 41 connected to the bit line B1 corresponding to the specified cell C1 is turned on. The MOS transistor 51 connected to the word line W1 corresponding to the group 21 is turned on, too. Next, a constant current I0 is passed to the bit lines B1 to B4 from the peripheral circuit 1 and the MOS transistors 31 to 34 are turned on. The MOS transistors 61 to 64, too, are turned on, and the potential of the signal line 80 is set at the ground potential GND. Then the gate and drain of the MOS transistor 10 are shorted through the MOS transistors 31, 41, 51, bit line B1, signal line 50 and word line W1 (this short-circuit is shown by �S� in FIG. 3) and the constant current I0 flows to the source of the MOS transistor 10 (FIG. 3(A)). As a result, the gate-source voltage VC1 of the MOS transistor becomes equal to the threshold voltage Vth2, and this voltage VC1 is applied to the gates of the other MOS transistors 11 to 13 through the word line W1.
FIG. 4 is a circuit diagram showing a specific example of the structure of the peripheral circuit 1. MOS transistors 81 to 84 have their respective first electrodes (sources in the case of PMOS) connected to a power source Vdd, and their second electrodes (drains in the case of PMOS) are connected to the bit lines B1 to B4, respectively. When supplied with a given voltage at their respective gates, the MOS transistors 81 to 84 can supply the constant current I0 to the bit lines B1 to B4, respectively. Voltage sense circuits 91 to 94 for detecting the voltage on the bit lines B1 to B4 are connected to the bit lines B1 to B4, respectively.
As shown in FIG. 3(A), when the cell C1 is specified as a reference cell, the voltage VC1 equal to the threshold voltage Vth2 of the MOS transistor 10 is applied to the gates of other MOS transistors 11 to 13. Then, because the threshold voltage Vth1 of the MOS transistor 11 is lower than Vth2, the MOS transistor 11 turns on when the voltage VC1 is applied to its gate. As a result, the bit line B2 comes to conduct to the signal line 80 through the MOS transistors 32 and 11, signal line 72 and MOS transistor 62 in this order and the voltage of the bit line B2 becomes approximately equal to the ground potential GND. On the other hand, since the threshold voltages Vth3 and Vth4 of the MOS transistors 12 and 13 are higher than Vth2, the MOS transistors 12 and 13 do not turn on even when the voltage VC1 is applied to their gates. As a result, the constant current I0 does not flow on the bit lines B3 and B4, so that the voltage of the bit lines B3 and B4 remains approximately at the power-supply potential Vdd. The voltages on the bit lines B2 to B4 are sensed respectively by the voltage sense circuits 92 and 94. Then, according to whether the bit line voltage has varied to the ground potential GND or stays at the power-supply potential Vdd, it can be determined in a relative manner whether the threshold voltages of the MOS transistors 11 to 13 are each higher or lower than the threshold voltage of the MOS transistor 10.
As shown in FIGS. 3(B) to (D), this operation is repeated while sequentially specifying the remaining cells C2 to C4 as the reference cell, so as to determine whether the threshold voltages of the MOS transistors 10 to 13 are higher or lower relative to each other. In other words, data can be read from the cells C1 to C4.
Generally, when the threshold voltage of each MOS transistor can be set at N levels (N is a natural number of 2 or more), the threshold voltages of the plurality of MOS transistors in one digit of cells can be set at all different values as long as one digit is formed by a group of M cells (M is a natural number of not less than 2 nor more than N). However, setting N=M is desirable to maximize the storage capacity per unit area in the memory cell array.
While the operation of writing data into the cells C1 to C4 and the operation of erasing the data can be achieved by a conventional method, a data writing method suited to the nonvolatile semiconductor memory device of this preferred embodiment will now be suggested.
FIG. is a diagram showing the relation of voltages applied to the electrodes of an MOS transistor to write data by using the Fowler-Nordheim tunnel effect. A high voltage VG is applied between the control gate and drain with the source opened. For example, 0 V is applied to the drain and 17 V is applied to the control gate. FIG. 6 is a timing chart showing the waveforms of write pulses applied between the control gate and drain in the MOS transistors 10 to 13 in data writing operation. No write pulse is applied to the MOS transistor 11 whose threshold voltage is to be set at Vth1. This operation can be realized by continuously applying the high voltage VG to the bit line B2 while applying the high voltage VG also to the word line W1 in FIG. 1. Then, in the MOS transistor 11, no charge is injected in the floating gate. A write pulse P2 having a pulse width T2 is applied to the MOS transistor whose threshold voltage is to be set at Vth2. This operation can be realized by applying 0V to the bit line B1 for a time period corresponding to the pulse width T2 with the high voltage VG applied to the word line W1. Similarly, write pulses P3 and P4 having pulse widths T3 and T4 (T2<T3<T4) are applied to the MOS transistors 12 and 13 whose threshold voltages are set at Vth3 and Vth4, respectively. In this operation, the write pulses P2 to P4 have a constant voltage value at VG (the voltage value between the control gate and drain).
FIG. 7 is a timing chart showing the waveforms of other write pulses to be applied between the control gate and drain in the MOS transistors 10 to 13 in the data writing operation. As in the operation explained above, no write pulse is applied to the MOS transistor 11 whose threshold voltage is to be set at Vth1. A write pulse P2 having a voltage value VG2 is applied to the MOS transistor whose threshold voltage is set at Vth2. Similarly, write pulses P3 and P4 having voltage values VG3 and VG4 (VG2<VG3<VG4) are applied to the MOS transistors 12 and 13 whose threshold voltages are set at Vth3 and Vth4, respectively. At this time, the write pulses P2 to P4 have a constant pulse width.
As shown in FIGS. 6 and 7, the relation among the threshold voltages of the MOS transistors 10 to 13 as to whether they are higher or lower relative to each other can be established by setting at least one of the pulse width and voltage value of the write pulses at different values relative to each other among the cells C1 to C4. In other words, data can be written in the cells C1 to C4.
While the description above has shown an example in which the threshold voltage of the MOS transistor in each cell is set at four values, it can be set at five or more values. FIG. 8 is a diagram showing the number of representations expressed by one data unit when the number of multiple values, N, of the MOS transistors and the number of cells, M, in one digit are varied under the condition of N=M. For comparison with this invention, FIG. 8 also shows the number of representations expressed by one data unit in a conventional device when the number of cells, M, is varied with the number of multiple values, N, set constant at 4. Referring to FIG. 8, it is seen that one data unit in the present invention can express a larger number of numbers, or can store a larger amount of information, than the conventional device when N=M=9 or more.
As described so far, in a plurality of cells forming one digit in the nonvolatile semiconductor memory device of the preferred embodiment, all of the threshold voltages of the plurality of MOS transistors are set at different values. Accordingly, in the operation of reading data, data can be read easily by comparing the threshold voltages of the MOS transistors with each other to determine the levels of the threshold voltages relative to each other. Further, in the operation of writing data, data can be written in a shorter time by single writing operation just by establishing the relation among the threshold voltages of the MOS transistors as to whether they are higher or lower relative to each other.
In a plurality of memory cells forming one digit, the threshold voltages of the MOS transistors are set merely to establish the relation as to whether they are higher or lower relative to each other, and the relation among relative values is not much affected by the variations in physical characteristics among the MOS transistors. Accordingly, as compared with a conventional nonvolatile semiconductor multi-valued memory device which controls the threshold voltages of a plurality of MOS transistors by using absolute voltage values, the number of multiple values of the MOS transistors can be easily increased and therefore a nonvolatile semiconductor multi-valued memory device with larger capacity can be obtained easily.
According to the method of reading data from the nonvolatile semiconductor memory device of this preferred embodiment, whether the threshold voltages of the MOS transistors other than that in the reference cell are higher or lower than the threshold voltage of the MOS transistor in the reference cell is determined in a relative manner just by comparison, not by using absolute voltage values as in conventional devices. Accordingly the determination can be made easily and the processing time can be reduced.
Furthermore, according to the method of writing data into the nonvolatile semiconductor memory device of this preferred embodiment, the relative levels among the threshold voltages of the MOS transistors can be established by one writing operation, which reduces the time required for the data writing operation.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5394359 *Sep 14, 1992Feb 28, 1995Gemplus Card InternationalMOS integrated circuit with adjustable threshold voltageUS5394362 *Jun 4, 1993Feb 28, 1995Banks; Gerald J.Electrically alterable non-voltatile memory with N-bits per memory cellUS5412601 *Aug 30, 1993May 2, 1995Nippon Steel CorporationNon-volatile semiconductor memory device capable of storing multi-value data in each memory cellUS6026015 *Jun 26, 1998Feb 15, 2000Nec CorporationNon-volatile multi-level semiconductor storage device for storing multiple bits using multiple variable threshold voltagesJPH0991971A Title not available* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS6426892 *Jul 5, 2001Jul 30, 2002Kabushiki Kaisha ToshibaNonvolatile semiconductor memory device for storing multivalued dataUS6496412Feb 28, 2002Dec 17, 2002Kabushiki Kaisha ToshibaNonvolatile semiconductor memory device for storing multivalued dataUS7111109 *Mar 7, 2003Sep 19, 2006Canon Kabushiki KaishaControl system, recording device and electronic apparatusUS7349260 *Dec 29, 2005Mar 25, 2008Sandisk CorporationAlternate row-based reading and writing for non-volatile memoryUS7443726Dec 29, 2005Oct 28, 2008Sandisk CorporationSystems for alternate row-based reading and writing for non-volatile memoryUS7573747Oct 31, 2007Aug 11, 2009Sandisk CorporationAlternate row-based reading and writing for non-volatile memoryUS7889560Aug 10, 2009Feb 15, 2011Sandisk CorporationAlternate row-based reading and writing for non-volatile memoryUS8225180Nov 20, 2008Jul 17, 2012California Institute Of TechnologyError correcting codes for rank modulationUS8245094Nov 20, 2008Aug 14, 2012California Institute of Technology Texas A & MRank modulation for flash memoriesUSRE40110Sep 10, 2003Feb 26, 2008Kabushiki Kaisha ToshibaNonvolatile semiconductor memory device for storing multivalued dataWO2007002812A2 *Jun 28, 2006Jan 4, 2007Siefken IncMethod to bond concrete slab to metalWO2009067624A1 *Nov 20, 2008May 28, 2009California Inst Of TechnError correcting codes for rank modulationWO2009067633A1 *Nov 20, 2008May 28, 2009California Inst Of TechnRank modulation for memory devices* Cited by examinerClassifications U.S. Classification365/185.24, 365/185.03International ClassificationG11C11/56, H01L21/8247, H01L27/115, G11C16/26, G11C16/02, G11C16/10, H01L29/792, H01L29/788Cooperative ClassificationG11C11/5621, G11C11/5628, G11C16/10, G11C11/5642, G11C16/26European ClassificationG11C11/56D, G11C11/56D4, G11C16/10, G11C16/26, G11C11/56D2Legal EventsDateCodeEventDescriptionDec 27, 2012FPAYFee paymentYear of fee payment: 12Mar 18, 2011ASAssignmentEffective date: 20110307Owner name: RENESAS ELECTRONICS CORPORATION, JAPANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MITSUBISHI DENKI KABUSHIKI KAISHA;REEL/FRAME:025980/0219Dec 24, 2008FPAYFee paymentYear of fee payment: 8Dec 29, 2004FPAYFee paymentYear of fee payment: 4Sep 20, 2000ASAssignmentOwner name: MITSUBISHI DENKI KABUSHIKI KAISHA, JAPANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:YOSHIMURA, YOSHIMASA;REEL/FRAME:011102/0310Effective date: 20000622Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA 2-3, MARUNOUCHIRotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google


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The Garden of Promise by Thomas Kinkade
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Shop Aztec Lighting Transitional 1-light Olde Bronze Pendant - On Sale - Free Shipping Today - Overstock.com - 17978302
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Model Number 34879

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text:
Four dissertations (Libro, 1990) [WorldCat.org]
http://www.worldcat.org/oclc/24667712
Titolo: Four dissertations
Editore: Bristol : Thoemmes, ©1990.
ISBN/ISSN: 185506054X 9781855060548
OCLC:24667712
Bristol : Thoemmes, ©1990.
Eighteenth century English philosophy.
Unitarian Universalist churches -- Doctrines.
185506054X 9781855060548
24667712
Facsim of: ed. published London : A. Millar and T. Cadell, 1768.
viii, 464 p. ; 23 cm.
On providence --
On the reasons for expecting that virtuous men shall meet after death in a state of happiness --
On the importance of Christianity, the nature of historical evidence, and miracles.
Richard Price ; with a new introduction by John Stephens.
Aggiungi etichette: per "Four dissertations".
Future life -- Christianity -- Early works to 1800.
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Four dissertations/Richard Price; Bristol : Thoemmes, ©1990.

value: This website is a union catalog that itemizes the collections of 15,637 libraries in 107 countries that participate in the OCLC global cooperative. It is operated by OCLC, Inc.


text:
Auto drivers don’t give a damn to traffic notices - delhi - Hindustan Times
Auto drivers don’t give a damn to traffic notices
Despite complaints and subsequent action by the traffic police, passengers continue to be harassed as the drivers care two hoots for action, reports Nivedita Khandekar.
delhi Updated: Aug 07, 2008 23:12 IST
Delhiites and their ‘struggle’ with autorickshaw drivers is age old. The Delhi Traffic police regularly announces its helpline numbers where harried passengers can call and lodge complaints.
Recently, several passengers have started calling the helpline run by the traffic police to lodge complaints for refusal, misbehaviour or overcharging by the autorickshaw drivers.
However, despite such complaints and subsequent action by the traffic police, passengers continue to be harassed as the drivers care two hoots for action.
After you call the traffic helpline, the registration number of the auto (along with the reason) is sent to the police’s Notice Branch, which issues a notice.
The driver has to deposit fine amount within 30 days, failing which he has to go to a court. Last, if he fails to appear on the designated day, a warrant is issued against him. The entire procedure takes between 4-6 months.
Statistics show (see box) a very less number of notices are paid up, while majority of them remain pending.
It no secret that many auto rickshaw drivers pay a fixed amount daily to the owner/permit holder of the vehicle. The addressed furnished too is either false or changed at times.
“Wrong or changed address is just one of the reasons. There can be many reasons for non-compliance,” said a senior traffic
But another official points out, “Wrong address can be a problem otherwise too. It is a serious thing in terms of security threats. This way, you can never trace the real culprit. The Transport department has to be more vigilant while issuing permits.”
Transport officials admitted the drivers do not inform about the changed address.
“We have recently changed the permit conditions for auto rickshaws, wherein we are now going to call them for annual fitness tests. That time, we will ask for the address proof again,” Commissioner (Transport) RK Verma said.
Two die of electrocution in Sarojini Nagar
https://www.hindustantimes.com/delhi/auto-drivers-don-t-give-a-damn-to-traffic-notices/story-81tM8Xv2tJOMG5h0F3Vo8I.html

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text:
Manchurian Ghosts - The New York Times
Archives|Manchurian Ghosts
https://nyti.ms/29dFTMR
Manchurian Ghosts
BABA A Return to China Upon My Father's Shoulders. By Belle Yang. Illustrated by the author. 211 pp. New York: Harcourt Brace & Company.
IN "Baba: A Return to China Upon My Father's Shoulders," Belle Yang presents 20 short tales and three dozen watercolors and pen-and-ink drawings to tell the story of her father's childhood in Manchuria. Born into a wealthy family in 1928, the fourth of seven children, Baba ("father," in Chinese) grew up under the Japanese occupation. After Japan's surrender in 1945, he experienced the ravages of Russian and Chinese Communist and Nationalist plunderers, civil war and famine before fleeing south at the age of 18 toward Beijing and, eventually, overseas.
Ms. Yang was born in Taiwan and moved to the United States with her parents at the age of 7. The material she has collected in her book -- reminiscences of a far-off land, passed along to an Americanized daughter by her Chinese-born father -- has the flavor of folk or fairy tales, or children's stories. "Baba" is full of ghosts, bandits, beggars and shamans, reincarnation and gambling, and the ancient rituals of courtship, marriage and death. The dialogue and sound effects would entertain a child. Perhaps, one surmises, the author first heard these adventures as bedtime stories.
And yet, much as an adult wishes to be charmed by "Baba," there are obstacles to overcome. The historical drama one would expect to find in such a memoir is, for the most part, relegated to the background. And the tales sometimes feel so ephemeral, so disconnected from their original source, that the reader longs for Baba's own words. Although the anecdotes are arranged chronologically, Baba acquires little depth as a character as he becomes older. Since the tales end well before the author is born, and since there are even some stories that Baba himself heard as a child, the gap between storyteller and writer, between father and daughter, heightens the reader's sense of detachment.
When the stories succeed, however, they can be delightful. In "Fire Wagons," half a dozen village ladies with bound feet, released in their old age from the heaviest of their household duties, go to town for their first look at a train -- and end up, by accident, riding toward Beijing. And in the suspenseful "Qingyun," a rich uncle dreams of a legendary courtesan, inspiring him to send 17-year-old Baba to the gambling table, where he bets on a lottery based on the names of figures from history and mythology.
In "A Ghost Story," a classically scary tale full of creaks and shudders, Baba's cousin teaches him filial piety on Ghost Festival Day, when the town turns out in a nighttime pilgrimage to burn "spirit money" for the dead. Here Baba learns how a ghost frightened Carpenter Wang to death: "Suddenly -- gatagatagagata! The toolbox began to rattle and shake as if possessed. The faster he ran, the more furiously it rattled." No one, it seems, had remembered to sweep the ghost's grave.
As a decorative complement to the tales, the illustrations go far to fill in some of the emotional and descriptive gaps. They recall the colorful mass-produced "peasant" paintings of contemporary China, as well as traditional woodblock prints and drawings of religious figures like the goddess Guanyin, which might be found on a Chinese New Year's calendar.
Despite this project's shortcomings, the spirit of love, creativity and quest for identity in which the author must have undertaken it is clear. As Baba sets off at the end of the book toward the unknown, Ms. Yang reminds us that "Baba will not travel alone, for this is not his maiden voyage. He is journeying forth upon a road of memory, and I, his daughter, will be with him, riding high upon his shoulders to dream the landscape of China, unrolling like a great, long painted scroll."
A version of this review appears in print on October 23, 1994, on Page 7007020 of the National edition with the headline: Manchurian Ghosts. Today's Paper|Subscribe

value: This website is an American daily newspaper based in New York City with a worldwide readership. Founded in 1851, the Times has since won 132 Pulitzer Prizes, the most of any newspaper, and has long been regarded within the industry as a national "newspaper of record".


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text:
#112 of 2,275 things to do in Paris
Closes in 10 min: 8:30 AM - 5:30 PM
“buried here”(30 reviews)
“jean paul sartre”(20 reviews)
“man ray”(17 reviews)
Ways to Experience Montparnasse Cemetery (Cimetiere Montparnasse)
All reviews buried here jean paul sartre man ray porfirio diaz resting place interesting graves grave stones jewish section peaceful place famous names de beauvoir le chat worth a visit free map couple of hours works of art take your time
Here you find many tombs with a story. There are a lot of famous people who found their last resting place over here like Serge Gainsbourg, Samuel Beckett, Charles Baudelaire, Jean-Paul Sartre, Simone de Beauvoir .... End your visit by looking at the statue Le...More
Not as well known as Pere Lachaise but has some very notable graves Adolphe Sax was played some John Coltrane. As a chef I was interested to see the tombs of Careme and Escoffier
Come if You Like Cemeteries
Lots of famous people are buried here. It's sort of a cemetery for the neighborhood. Get a map of the graves to see the famous. A somewhat pleasant park. Lots of good cafes nearby.
Give it at least 3 hours to tour
Of almost 20 Paris cemeteries, according to the unofficial "ranking", based largely on their popularity with tourists, Montparnasse cemetery would immediately follow Père-Lachaise. The reason being is not only the amount of the world luminaries and celebrities who found their last resting place in Montparnasse...More
Sun was shining and we’d already visited Père Lachaise so we decided to take in Montparnasse. Nice walking paths with many interesting graves. Be sure to pick up one of the laminated maps hanging at the entrance that show who is buried where (and return...More
A very interesting cemetery if you can't make it to Pere Lachaise
I rated Pere Lachaise cemetery a higher because it is more well known, has far more to see of unique interest and has more famous people in it, but if you can't make it to that one, here is a secondary you may want to...More
Very interesting cemetery. Stumbled upon the Jewish section which was interesting to me. Right in the heart of the 14th arrondissement.
Thank ruthredsilk
I had been wanting to pay tribute to Simone de Beauvoir and Jean-Paul Sartre here for several years, and finally got the chance in July 2018. I didn't realize the visit would be so moving and include many I've admired. Other famous French intellectual and...More
Thank LReznik
Smaller than Père Lachaise and much easier to traverse. If you want a taste of quaint Parisian cemeteries, this is a nice start.
Some very famous people are buried here so get a map of their graves before you explore. In the shadow of lots of artist lofts and near the Montparnasse cafes.

value: This website is an American online travel company that operates a website and mobile app with user-generated content and a comparison shopping website.


text:
Advanced technology optical telescopes IV : 12-16 February 1990, Tucson, Arizona (eBook, 1990) [WorldCat.org]
I thought you might be interested in this item at http://www.worldcat.org/oclc/57593448 Title: Advanced technology optical telescopes IV : 12-16 February 1990, Tucson, Arizona Author: Larry D Barr; Society of Photo-optical Instrumentation Engineers; American Astronomical Society; SPIE Digital Library Publisher: Bellingham, Wash., USA : SPIE, ©1990. OCLC:57593448
Larry D Barr; Society of Photo-optical Instrumentation Engineers.; American Astronomical Society.; SPIE Digital Library.
(OCoLC)22255203
Find more information about: Larry D Barr
57593448
Advanced technology optical telescopes four
Advanced technology optical telescopes 4
Add tags for "Advanced technology optical telescopes IV : 12-16 February 1990, Tucson, Arizona". Be the first.
<http://www.worldcat.org/oclc/57593448> # Advanced technology optical telescopes IV : 12-16 February 1990, Tucson, Arizona
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<http://experiment.worldcat.org/entity/work/data/365933433#Topic/telescopes_design_and_construction> # Telescopes--Design and construction
<http://viaf.org/viaf/91597434> # Larry D. Barr
schema:name "Larry D. Barr" ;
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schema:location <http://experiment.worldcat.org/entity/work/data/365933433#Place/bellingham_wash_usa> ; # Bellingham, Wash., USA
schema:organizer <http://experiment.worldcat.org/entity/work/data/365933433#Agent/spie> ; # SPIE
Advanced technology optical telescopes IV : 12-16 February 1990, Tucson, Arizona/Larry D Barr; Society of Photo-optical Instrumentation Engineers.; American Astronomical Society.; SPIE Digital Library.;; Bellingham, Wash., USA : SPIE, ©1990.


text:
2 I've been following the lessons about transparency and gradients on mozillas site https://developer.mozilla.org/en/Canvas_tutorial/Applying_styles_and_colors but I have not been able to figure this one out.
I know I can achieve these effects with a png image; however, in the program I am working on the gradient will chance constantly according to where the image is moved.
javascript html5 canvas transparency gradient share|improve this question asked Jul 23 '10 at 16:46
2,4581227
I've finally got this working. I just need to tidy the code before I post it.
If you need to make an image transparent set the ctx.globalAlpha to whatever you need (1, no transparency, is default). Then reset it after you draw your image. This URL probably will help as well https://developer.mozilla.org/en/Canvas_tutorial%3aCompositing. share|improve this answer answered Jul 23 '10 at 17:12
Not the answer you're looking for?	Browse other questions tagged javascript html5 canvas transparency gradient or ask your own question.	tagged

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Free Online Tool Lets Companies See the Impact of Erasing Data on their Data Storage Costs
ATLANTA and LONDON, June 29, 2017 /PRNewswire/ -- Companies spend an average of $1,593 per raw TB of capacity on data storage costs each year, according to Gartner. These costs include annual operational expense, lease, depreciation, maintenance, installation and taxes, as well as hardware, software, connectivity, disaster recovery, occupancy and personnel. But only 15 percent of the average company's data is business-critical, which leaves 85 percent that is classified as ROT (redundant, obsolete or trivial) and dark data that could be erased. Blancco Technology Group (LON: BLTG) has today launched its Data Storage vs. Data Erasure ROI Calculator to help companies visualize just how much money they could save by erasing unneeded data.
The ROI calculator processes the average amount of data companies create and store, using a general hard cost average of $150 per terabyte of cloud storage. It then provides a side-by-side view of the average cost of storing data and the average cost of erasing data. The tool shows the cost savings delivered over time and includes a total cost savings that could be achieved after 3 years of implementing data erasure processes.
When 85 percent of the data stored by companies is deemed unnecessary and there are no data erasure processes in place, the costs of storing data compound over time. But when companies implement data erasure processes, their data storage costs will decrease significantly over time. On top of these cost savings, data erasure reduces the quantity of data that could potentially be exposed to data loss/theft in the event of a data breach.
Below is an example of the math behind the savings for a company adding as little as 10 TB of data each year. If a company creates and stores 10 TB of data per year, the assumption is that 85 percent of that data, or 8.5 TB, is not business-critical and should be erased each year.
Compounding Costs of Storing
Costs of Erasing Unnecessary
Year 1: 8.5 TB of data = $1,275
Year 1: 8.5 TB of data = $1,088
Year 2: 17 TB of data = $2,550
Year 2: 8.5 TB of data = $1,088
Year 3: 22 TB of data = $3,825
Year 3: 8.5 TB of data = $1,088
Total Cost After 2 Years: $3,825
Total Cost After 2 Years: $2,176
Total Cost After 3 Years: $7,650
Total Cost After 3 Years: $3,264
Richard Stiennon, Chief Strategy Officer for Blancco Technology Group and former Gartner analyst, says the new tool provides an important first step for IT security executives and CIOs looking to reduce their data storage costs. "It's one thing to hear about the mitigated security risks and compliance other organizations have achieved through data erasure. But it's much more compelling when companies can see the impact data erasure can have on their data storage costs compounded over time. Suddenly, data erasure becomes a critical data security solution that not only minimizes exposure to data loss/theft and ensures regulatory compliance, but also delivers a better bottom line."
As companies look for ways to manage their data storage budgets, the following steps will enable them to achieve greater cost savings and a stronger security posture on a long-term basis:
Create a data lifecycle management strategy
Classify data types and determine the length of time required to store the data
Know your data storage budget, including soft and hidden costs
Determine where you can save money by erasing unneeded data, instead of storing it
Create processes for classifying and erasing unneeded data
Evaluate data management processes on an ongoing basis based on new technologies and changes within the organization
To view the original version on PR Newswire, visit:http://www.prnewswire.com/news-releases/blancco-technology-group-launches-data-storage-vs-data-erasure-roi-calculator-300481272.html
Preview: Android Devices Struggle to Keep Pace With the Performance of Apple's iPhones
Sep 13, 2017, 06:00 ET Android Devices Struggle to Keep Pace With the Performance of...

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'Clark Rockefeller' Kidnap Suspect Says He's Starting to Remember Past | Fox News
'Clark Rockefeller' Kidnap Suspect Says He's Starting to Remember Past
LOS ANGELES – Blaming a faulty memory, the man who calls himself Clark Rockefeller has repeatedly denied allegations of an alias-filled past and any link to a Southern California couple who disappeared 23 years ago.
Los Angeles County sheriff's investigators said Monday that Rockefeller's real name is Christian Gerhartsreiter — a German national who has used several aliases since arriving in the United States as a student many years ago.
Investigators have also said a fingerprint on a stockbroker's license application under one of his aliases — Christopher Chichester — matched Rockefeller's prints.
Under the Chichester name, he rented a guesthouse at an estate owned by Jonathan Sohus' mother in San Marino, a wealthy enclave about 10 miles northeast of Los Angeles, investigators said. Jonathan and Linda Sohus were young newlyweds living with the mother when they vanished in 1985.
Hrones said his client still believes his real name is Clark Rockefeller and has no memory of being Christian Gerhartsreiter. His client has also claimed to have few memories before 1993 — the last year authorities have found records for a "Clark Rockefeller."

value: This website is an American multinational conservative cable news television channel based in New York City. It is owned by Fox News Media, which itself is owned by the Fox Corporation.


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Rose Gold Studs Stud Earrings Rose Gold Earrings Snowflake | Etsy
With its snow flake pattern and on trend rose gold plating, these unusual sterling silver studs are sure to carry you through every season in style, including summer!
These stud earrings are made from Rose Gold Plated Sterling Silver.
Earrings diameter: approx. 1.1cm
Frost Silver Studs
https://www.etsy.com/uk/listing/184260926/snowflake-silver-stud-earrings
https://www.etsy.com/uk/listing/206240853/handmade-snowflake-silver-stud-earrings
https://www.etsy.com/uk/listing/206376417/spike-sterling-silver-stud-earrings
Materials: 18k rose gold plating, Sterling silver, 925 silver, Rose Gold, Rose Gold Plating, 18k Rose Gold, Plaqué or rose, rosengoldbeschichtet, chapadoenoroamarillo y rosa, розового золота гальваническим, ローズゴールドメッキ, 925 Sterling Silver, 925

value: This website is an American e-commerce company focused on handmade or vintage items and craft supplies.


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Facilities Coordinator $35,000 Jobs, Employment in Lake Mary, FL | Indeed.com
Facilities Coordinator $35,000 jobs in Lake Mary, FL
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Santhiya Koh Phangan Resort and Spa, Thong Nai Pan Noi – Updated 2018 Prices
Lock in a great price for Santhiya Koh Phangan Resort and Spa - rated 9.1 by recent guests.
Traveller photo of Thong Nai Pan Noi
Lovely breakfast and the hotel was very clean throughout - good fitness centre
The resort is superb. The hideaway pool villa was wow. The inside very nice. The shower area is outside and very cosy. The breakfast is perfect. Everything was amazing.
Miruna2301, Romania
We loved the very traditional looking buildings set up in a wonderful lush tropical garden with stunning views over the bay. The staff, for whom English is no problem, is very kind and helpful. We liked to walk to the lovely village along the beach.
This was one of the nicest places we stayed at during our trip in Koh Phanang, the staff were so friendly and super helpful, the rooms have an unbelievably beautiful view, food was amazing! grounds were beautiful PLUS an array of amazing activities to do during those rainy days. We cannot wait for our next stay there :)
The facility are amazing, the resort and staffing are attentive, nothing was too much trouble. Our room was beautifuly presented! We felt like royalty. Highlight of our holiday was staying here
First of all amazing stuff. And also place is quite well. Details of hotel are so beautiful. Everybody is smiling all the time. Close to a small village. You can hire a motorbike to travel.
Hilmi, Turkey
very nice luxury resort, friendly helpful staff, excellent facilities full of comfort, wonderful environment and beautiful nature
Beautifully made property! Can't ask for more! the real feel is much better than the pictures shown online! The place is awesome and by the look of it, one would say that someone has put his heart into building it.
Everything from start to finish was amazing! This was our second hotel during our honeymoon and the first one give this place big shoes to fill. The staff were SO friendly and went the extra mile to ensure you were having the best time possible. I got talking to an awesome staff member for almost 10 minutes about Harry Potter! We have awkward dietary requirements but were catered for from start to finish. The staff were able to create personalised dishes for us without any trouble at all. The views from our villa were stunning. The resort have really tried, and succeeded, to ensure that the nature has been minimally affected by their presence. We got to see so much wildlife and nature during our stay, and not in a Bear Grylls kind of way, in a fascinating and personal way. Thank you to everyone there who made our stay easy, enjoyable, magical and issue-free.
“the resort blends beautifully with the surronding jungle. spoils and lesure with warm Thai hospitality”
“Lovely breakfast and the hotel was very clean throughout - good fitness centre”
“The resort is superb. The hideaway pool villa was wow. The inside very nice. The shower area is outside and very cosy. The breakfast is perfect. Everything was amazing.”
Miruna2301 Romania
“We loved the very traditional looking buildings set up in a wonderful lush tropical garden with stunning views over the bay. The staff, for whom English is no problem, is very kind and helpful. ”
“This was one of the nicest places we stayed at during our trip in Koh Phanang, the staff were so friendly and super helpful, the rooms have an unbelievably beautiful view, food was amazing! ”
“The facility are amazing, the resort and staffing are attentive, nothing was too much trouble. Our room was beautifuly presented! We felt like royalty. Highlight of our holiday was staying here”
“First of all amazing stuff. And also place is quite well. Details of hotel are so beautiful. Everybody is smiling all the time. Close to a small village. You can hire a motorbike to travel. ”
“very nice luxury resort, friendly helpful staff, excellent facilities full of comfort, wonderful environment and beautiful nature”
“Beautifully made property! Can't ask for more! the real feel is much better than the pictures shown online! ”
“Everything from start to finish was amazing! This was our second hotel during our honeymoon and the first one give this place big shoes to fill. ”
Santhiya Koh Phangan Resort and Spa is just 200 yards from the popular Thong Nai Pan Noi Beach. The resort is a 40-minute speed boat ride from Koh Samui.
Santhiya Koh Phangan Resort and Spa has been welcoming Booking.com guests since 11 Mar 2008.
This mountainside room enjoys views of Thong Nai Pan Bay and a bathroom with bathtub. It offers both indoor and outdoor living area.
Set in a tropical garden, this spacious villa features a private pool.
Room offers a large living area and a private pool with sea views.
Just booked in Thong Nai Pan Noi 1 resort like Santhiya Koh Phangan Resort and Spa was just booked on our site
Resort facilities of Santhiya Koh Phangan Resort and Spa Great facilities! Review score, 9.3
House rules Santhiya Koh Phangan Resort and Spa takes special requests - add in the next step!
All reviewers Families (154) Couples (483) Groups of friends (85) Solo travellers (32)
All review scores Superb: 9+ (564) Good: 7 – 9 (141) Okay: 5 – 7 (28) Poor: 3 – 5 (16) Very poor: 1 – 3 (5)
“We loved the very traditional looking buildings set up in a wonderful lush tropical garden with stunning views over the bay. The staff, for whom English is no problem, is very kind and helpful. We liked to walk to the lovely village along the beach. ”
“This was one of the nicest places we stayed at during our trip in Koh Phanang, the staff were so friendly and super helpful, the rooms have an unbelievably beautiful view, food was amazing! grounds were beautiful PLUS an array of amazing activities to do during those rainy days. We cannot wait for our next stay there :)”
“Beautifully made property! Can't ask for more! the real feel is much better than the pictures shown online! The place is awesome and by the look of it, one would say that someone has put his heart into building it.”
“Everything from start to finish was amazing! This was our second hotel during our honeymoon and the first one give this place big shoes to fill. The staff were SO friendly and went the extra mile to ensure you were having the best time possible. I got talking to an awesome staff member for almost 10 minutes about Harry Potter! We have awkward dietary requirements but were catered for from start to finish. The staff were able to create personalised dishes for us without any trouble at all. The views from our villa were stunning. The resort have really tried, and succeeded, to ensure that the nature has been minimally affected by their presence. We got to see so much wildlife and nature during our stay, and not in a Bear Grylls kind of way, in a fascinating and personal way. Thank you to everyone there who made our stay easy, enjoyable, magical and issue-free.”
The beds were very uncomfortable both in the room and the sun loungers. - not a great deal to do whilst it was raining - the WiFi was terrible - the hotel was over priced for drinks and eating or any of the tours
Miruna2301
The entrance of the hotel was under construction and not so nice.
Everything. The resort has a private beach, another beautiful huge beach right next to it. 2 swimming pools (we booked the Villa Plus which has a huge infinity pool too. Walking in the resort is a treat by itself. Amazing gym. 2 great restaurant and 24/7 room dinning. The staff is so friendly (special thanks to Haji, he made our stay pleasurable.
“Words alone cant describe the amazing experience you will have here!”
“If anyone is visiting Thailand, staying Santhiya is a must!”
I could not find anything I did not like about this resort
“Perfect 3 night break”
Nothing to dislike. You absolutely get what you pay for.
“Beautiful / Romantic place for Couples and Families!”
They charge for everything 🤷♂
Was huge, private and staff is amazing
“Stunning, enlightening, surprising and just perfect.”
The WiFi in the villa was pretty awful, but to be honest, it was barely noticeable, the views were so amazing and the resort had so much to offer I only picked up my phone to take pictures.
“Stunning location great hotel with excellent service and great value for money”
The sand on the beach is very coarse. Could benefit from foam pillows in bedroom & beach towels need to be more absorbent/substantial.
The Rooms stunning view with access to own pool area. Breakfast superb. Staff excellent, food great value for money:)

value: This website is a Dutch online travel agency for lodging reservations & other travel products, and a subsidiary of Booking Holdings. It is headquartered in Amsterdam.The website has over 28 million listings.


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Antique Religious Medals Jewelry and Rosaries by davidjp1927
Antique Religious Medals, Jewelry, and Rosaries
Antique French Bronze Religious Art Medal with Joan of Arc Saint Michael Mary Magdalene Hippolyte Lefebvre Dated 1919 SS239
Virgin Mary Our Good Mother Sterling Silver Antique Religious Medal, Holy Sacrament With Angels Signed Waag SS400
Virgin Mary Antique Silver Notre Dame De Bon Secours Religious Medal Signed Daubree SS288
Virgin Mary Limoges Brooch Antique French Silver Enamel Pin Pendant
Announcement Antique religious medals, jewelry, rosaries, and collectibles. We sell only the highest quality items with new items added daily! Welcome to Sanctum Sanctorum! We invite you to browse through at your leisure and to check back with us often, as we continue to add new items every day. Let us know if you need something specific and we will look for it for you, as we have many items that are not listed yet. Check out our sister site-
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May the peace of Our Lord be with you always, David
Antique religious medals, jewelry, rosaries, and collectibles. We sell only the highest quality items with new items added daily! Welcome to Sanctum Sanctorum! We invite you to browse through at your leisure and to check back with us often, as we continue to add new items every day. Let us know if you need something specific and we will look for it for you, as we have many items that are not listed yet. Check out our sister site-
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popi vafiades on Mar 25, 2017
Thank you so much for my pendant ..its beautiful !
Vintage 800 Silver Virgin Mary Religious Medal Catholic Pendant SS19
dunnev40 on Mar 22, 2017
Virgin Mary With Angels Antique French Silver Religious Medal Pendant SS372
lteivansjudge on Mar 22, 2017
This was purchased as a gift and has exceeded my expectations. Seller very responsive and a joy to work with - such a gorgeous piece of art/history.
Our Lady Of Lourdes With Angels Antique Religious Triptych Signed R Wicker Saint Bernadette Virgin Mary Art Deco Plaque Table Shrine
View all 2351 reviews
3 of 2351 reviews
Canonization Of Five Saints, Ignatius, Teresa Of Avila, Francis Xavier,
Isadore- Circa 1622 in silver
Medals from a collection that came out of a monastery and had not be touched since the early 1900's
Welcome to Sanctum Sanctorum! We are pleased to offer you hard to find, high quality vintage and antique jewelry, religious medals, and other treasures. If you are looking for something particular, please let us know and we will look for it for you. May the peace of the Lord be with you always, David
We currently accept Paypal and direct credit card payment. We require immediate payment, and do not offer "reserves" or layaway. New Jersey residents will have 7% sales tax added to your order.
We ship within the United States using USPS first class mail with delivery confirmation. Costs for additional services and shipping internationally vary. Please contact us using Etsy's conversation system for rates, estimated delivery times and additional services.
Items must be returned within 14 days of receipt in their original condition in order to qualify for a refund. Please contact us before returning items as additional information may be required. A refund will be made within 7 days of receiving the returned item.
Please be advised that the majority of our prices are firm. We reserve the right to refuse service to anyone for any reason.


text:
Pop artist stages retrospective | Art and design | The Guardian
Pop artist stages retrospective
Peter Blake at a new retrospective exhibition of his art at the London Institute
Saturday 2 August 2003 07.50 EDT First published on Saturday 2 August 2003 07.50 EDT
All Sir Peter Blake has left of his original work on the most famous album cover in the history of pop music is two cut-out heads: the music hall artist Max Miller and the German-born artist Richard Lindner. Both were part of the eclectic mob clustered around the Beatles for the legendary cover of Sgt Pepper's Lonely Hearts Club Band.
"There never was any artwork for it. They were all just life-size cut-outs set up in the studio. The following day most of them were thrown out. Some turn up from time to time, and I kept these two. They keep me company in my studio," Sir Peter said yesterday.
The figures that did survive are now startlingly valuable: a full-length Marlene Dietrich was auctioned recently for more than £80,000.
The heads were yesterday hung in the first exhibition assembling half a century of instantly identifiable commercial art by the artist who created some of the most imitated images of the last century. The designs include magazines, books, plates, postage stamps, calendars, a recent poster for the 25th anniversary Volkswagen Golf and another which the handlers anxiously noted, as they unpacked it, had been scribbled all over: it is Sir Peter's poster for the 1985 Live Aid concert, signed by all the artists.
The 1967 Sgt Pepper album cover was endlessly parodied, not least by Sir Peter himself, who made a millennium version with Red Rum gazing cheerfully over the Queen's shoulder, and a Liverpool one to support the city's successful bid to become European Capital of Culture.
The son of the exhibition's co-designer, Brian Webb, recently found a Russian bootleg version at a car boot sale - Sir Peter promptly signed it Peter Blakowski.
The exhibition also includes paintings and drawings he made while a student at Gravesend school of art, on the strength of which he was warned that he would never make a living as a painter. They are shown beside the covers he was soon afterwards producing for the Sunday Times magazine. At one point the magazine gave him and David Hockney £300 each to go wherever they wanted in the world: Hockney went to Egypt and Blake to Los Angeles. Brian Webb was a student himself at the time, and remembers in awe that £300 was more than his year's student grant.
One of the most famous images in the exhibition is Babe Rainbow, an archetypal 1960s glamour girl, originally commissioned by Dodo Editions to be printed on tin, in a 1968 edition of 10,000 sold at £1 each.
"Everyone bought one. They must be stashed away in lofts all over the country," Mr Webb said. Anyone who did keep one carefully made a canny investment: when they turn up they sell for up to 1,000 times the original price.
· Peter Blake Commercial Work is open to the public from Monday until September 11 at the London Institute Gallery, 65 Davies Street, London W1K 5DA

value: This website is a British news and media website owned by the Guardian Media Group. It contains nearly all of the content of the newspapers The Guardian and The Observer, as well as a substantial body of web-only work produced by its own staff, including a rolling news service.


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JaysonCole - Powerful in .NET Development | Freelancer
Raised on books and computers, I was self-motivated and self-taught. After spending 3 years mastering the .NET languages and their features, I went to college to earn an Associates degree in Computer Science, Application Programming. Since then, I have worked on many private projects and recently opened a company in Texas, USA.
View JaysonCole's Full Profile
Create one simple ASP .NET application MVC project with an example "call" to consuming an working webservice in .asmx and get an list output $25.00 USD
“Very nice work... Clean code and he also give us one very good written and clear instructions. Recomended!”
.Net programmer needed $10.00 USD
“Absolutely Fantastic work. Highly recommended and will work with him in future projects for sure. Highly recommended”
inew 5 years ago
Bonus for Jayson Cole on 3/9/2012 10:50:22 AM $10.00 USD
gkaywood 5 years ago
Need a Very Simple Uninstall Program $17.00 USD
“Very thorough on detail, and communication during the project to hammer out the inevitable details that come up was truly exceptional. I am very satisfied and pleased to recommend Jayson to anyone seeking his services.”
Bonus for Jayson Cole on 2/24/2012 12:15:29 PM $17.00 USD
kkmm 5 years ago
C# application to generate Word document Part II $20.00 USD
“Fantastic job! Jayson was incredibly responsive, code was well-written and explained. He quickly came up with a solution posed to unforseen change in project requirements. Would gladly work with him again!”
Windows Desktop 52

value: This website is an Australian freelance marketplace website, which allows potential employers to post jobs that freelancers can then bid to complete. Founded in 2009, its headquarters is located in Sydney, Australia, though it also has offices in Vancouver, London, Buenos Aires, Manila, and Jakarta.