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Farmington Bank: Private Company Information - Bloomberg
Company Overview of Farmington Bank
Farmington Bank provides banking products and services to residents and businesses in Hartford and western Massachusetts. The company offers checking, savings, money market, and certificates of deposit accounts; home, personal, term, government guaranteed, business and commercial real estate, and commercial loans, as well as business lines of credit options; and debit and credit cards. It also provides services in the areas of cash management, online banking and bill pay, information reporting, merchant service, payroll service, remote deposit capture, lockbox, reorder check, investment, mobile and telephone banking, overdraft protection and privilege, direct deposit, municipal service, and ...
Farmington Bank provides banking products and services to residents and businesses in Hartford and western Massachusetts. The company offers checking, savings, money market, and certificates of deposit accounts; home, personal, term, government guaranteed, business and commercial real estate, and commercial loans, as well as business lines of credit options; and debit and credit cards. It also provides services in the areas of cash management, online banking and bill pay, information reporting, merchant service, payroll service, remote deposit capture, lockbox, reorder check, investment, mobile and telephone banking, overdraft protection and privilege, direct deposit, municipal service, and interest rate risk management aspects. Farmington Bank was formerly known as Farmington Savings Bank and changed its name to Farmington Bank in September 2009. The company was founded in 1851 and is based in Farmington, Connecticut with branches in Connecticut and Massachusetts. Farmington Bank operates as a subsidiary of First Connecticut Bancorp, Inc.
860-676-4600
860-676-4685
Key Executives for Farmington Bank
Mr. Eric M. Schwab
Executive VP and Director of Bank Operations & Information Technology
Mr. Michael Romanski
Farmington Bank Key Developments
Farmington Bank announced the appointment of Thomas Pizzo as vice president, commercial loan officer. In his new role, Pizzo is responsible for furthering Farmington Bank's commercial and industrial lending activity in Connecticut. Pizzo operates out of Farmington Bank's Glastonbury office at 669 Hebron Avenue. Pizzo brings over 30 years of commercial banking experience to Farmington Bank. Previously he served at Wells Fargo Bank as senior vice president and senior relationship manager in Hartford. In addition, Pizzo held relationship management positions in the commercial lending groups at RBS Citizens (formerly State Street Bank) and Fleet Bank.
First Connecticut Bancorp, Inc. and Farmington Bank Announce Resignation of Kimberly R. Ruppert as Chief Accounting Officer
On March 1, 2016, First Connecticut Bancorp, Inc. announced that Kimberly R. Ruppert has resigned from her position as Chief Accounting Officer of the Company and its subsidiary Farmington Bank. There were and are no disagreements between Ms. Ruppert and the Company or the Bank or any officer or director of the Company or the Bank.
To contact Farmington Bank, please visit www.farmingtonbankct.com. Company data is provided by S&P Global Market Intelligence. Please use this form to report any data issues.

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Oklahoma’s abortion restrictions kicked back to the Supreme Court - The Washington Post
Oklahoma’s abortion restrictions kicked back to the Supreme Court
By Niraj Chokshi October 29, 2013
Pro-life supporters stand outside the Supreme Court on Oct. 7. (Evan Vucci/AP)
The future of Oklahoma’s abortion restrictions is in the hands of the U.S. Supreme Court now.
After a long battle over the 2011 law limiting how medication can be used to induce abortions, the state’s attorney general asked the U.S. Supreme Court in March to get involved. But before it would make a decision on whether to take up the case, the Court had some questions for its Oklahoma counterpart. That’s where things stood until Tuesday.
In a new filing, Oklahoma’s Supreme Court answered those questions, reaffirming its belief that the 2011 law violates both the state and federal constitutions. That filing comes just one day after Texas’s restrictive abortion ban was also ruled unconstitutional.
The law expanded limits surrounding abortion-inducing drugs, restricting doctors to prescribe them only according to the limited uses approved by the Federal Drug Administration. But a district court last year ruled that the law was “so completely at odds with the standard that governs the practice of medicine” that it was effectively an abortion ban. The Oklahoma Supreme Court upheld that ruling later that year and again in today’s filing.
Now, the question is whether the U.S. Supreme Court will review the case or let it stand.

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This website is a Christian catalog and internet retailer.
Christian Book Distributors was started in 1978 by Stephen Hendrickson, 19 years old and a sophomore at Central Bible College in Springfield, Missouri, out of his parents’ home in Lynn, Massachusetts.


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Patent US7525152 - RF power transistor device with metal electromigration design and method thereof - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsAn RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one...http://www.google.com/patents/US7525152?utm_source=gb-gplus-sharePatent US7525152 - RF power transistor device with metal electromigration design and method thereofAdvanced Patent SearchPublication numberUS7525152 B2Publication typeGrantApplication numberUS 11/678,330Publication dateApr 28, 2009Filing dateFeb 23, 2007Priority dateMar 2, 2006Fee statusPaidAlso published asUS20070205506, WO2007103685A2, WO2007103685A3Publication number11678330, 678330, US 7525152 B2, US 7525152B2, US-B2-7525152, US7525152 B2, US7525152B2InventorsChristopher P. Dragon, Wayne R. Burger, Robert A. PryorOriginal AssigneeFreescale Semiconductor, Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (8), Non-Patent Citations (9), Classifications (19), Legal Events (7) External Links: USPTO, USPTO Assignment, EspacenetRF power transistor device with metal electromigration design and method thereofUS 7525152 B2Abstract An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one or more branch (54-1, 54-2, 116-1, 116-2, 116-11, 116-21, 116-41) of metal having a metal width maintained within a bamboo regime.
1. An RF power transistor with a metal design comprising:
a drain pad; and
a plurality of metal drain fingers extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal, each section of metal including one or more branch of metal having a metal width maintained within a bamboo regime, wherein the at least one metal drain finger comprises a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad, further wherein the first section of metal comprises a single branch of metal and the second section of metal comprises two parallel branches of metal.
2. The RF power transistor of claim 1, wherein the metal width for the bamboo regime comprises a width that is smaller than an average grain size of the metal of the drain finger.
3. The RF power transistor of claim 1, wherein the metal drain fingers comprise a top metal.
4. An RF power transistor with a metal design comprising:
a plurality of metal drain fingers extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal, each section of metal including one or more branch of metal having a metal width maintained within a bamboo regime, wherein the at least one metal drain finger comprises a number of sections of metal, each section of metal including one or more branch of metal having a metal width maintained within the bamboo regime and wherein for any two succeeding sections, a distal section of the two contains at least one less branch than a proximate section of the two.
5. The RF power transistor of claim 4, wherein the at least one metal drain finger comprises a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad.
6. The RF power transistor of claim 5, further wherein the first section of metal comprises a single branch of metal and the second section of metal comprises two parallel branches of metal.
7. The RF power transistor of claim 4, further wherein the at least one metal drain finger comprises three sections of metal, a first section having one branch and being coupled to a second section having two parallel branches, the second section further coupled a third section having three parallel branches.
8. The RF power transistor of claim 7, still further wherein the first section is distal from the drain pad and the third section is proximate the drain pad.
9. An RF power transistor with a metal design comprising:
a plurality of metal drain fingers extending from the drain pad, wherein each metal drain finger comprises one or more sections of metal, each section of metal including of one or more branch of metal having a metal width maintained within a bamboo regime, wherein the metal width for the bamboo regime comprises a width that is smaller than an average grain size of the metal of the drain finger, wherein at least one of the metal drain fingers comprises a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad, further wherein the first section of metal comprises a single branch of metal and the second section of metal comprises two parallel branches of metal.
10. The RF power transistor of claim 9, further wherein at least one of the metal drain fingers comprises three sections of metal, a first section having one branch and being coupled to a second section having two parallel branches, the second section further being coupled a third section having three parallel branches.
11. The RF power transistor of claim 10, still further wherein the first section is distal from the drain pad and the third section is proximate the drain pad.
12. An RF power transistor with a metal design comprising:
a plurality of metal drain fingers extending from the drain pad, wherein each metal drain finger comprises one of more sections of metal, each section of metal including of one or more branch of metal having a metal width maintained within a bamboo regime, wherein the metal width for the bamboo regime comprises a width that is smaller than an average grain size of the metal of the drain finger, wherein at least one of the metal drain fingers comprises a number of sections of metal, each section of metal including one or more branch of metal having a metal width maintained within the bamboo regime and wherein for any two succeeding sections, a distal section of the two contains at least one less branch than a proximate section of the two.
13. The RF power transistor of claim 12, wherein at least one of the metal drain fingers comprises a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad.
14. The RF power transistor of claim 13, further wherein the first section of metal comprises a single branch of metal and the second section of metal comprises two parallel branches of metal.
15. A method of making an RF power transistor with a metal design comprising:
providing a drain pad; and
extending a plurality of metal drain fingers from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal, each section of metal including one or more branch of metal having a metal width maintained within a bamboo regime, wherein extending includes extending at least one metal drain finger that includes a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad, further wherein the first section of metal includes a single branch of metal and the second section of metal includes two parallel branches of metal.
16. The method of claim 15, wherein the metal width for the bamboo regime comprises a width that is smaller than an average grain size of the metal of the drain finger.
17. A method of making an RF power transistor with a metal design comprising:
extending a plurality of metal drain fingers from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal, each section of metal including one or more branch of metal having a metal width maintained within a bamboo regime, and wherein extending the at least one metal drain finger comprises extending a number of sections of metal, each section of metal including one or more branch of metal having a metal width maintained within the bamboo regime and wherein for any two succeeding sections, a distal section of the two contains at least one less branch than a proximate section of the two.
18. The method of claim 17, further wherein extending the at least one metal drain finger comprises extending three sections of metal, a first section having one branch and being coupled to a second section having two parallel branches, still further wherein the first section is distal from the drain pad and the third section is proximate the drain pad.
19. The method of claim 17, wherein extending includes extending at least one metal drain finger that includes a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad.
20. The method of claim 19, further wherein the first section of metal includes a single branch of metal and the second section of metal includes two parallel branches of metal.
BACKGROUND The present disclosures relate to RF devices, and more particularly, to an RF power transistor device with metal electromigration design and method thereof.
RF-LDMOS transistor designs have approached electromigration historically as an issue to be solved by lowering current density. Such an approach leads to wider and wider drain metal lines, which has the negative effect of increasing device capacitances.
FIG. 1 is a top down diagram view of a portion 10 of a top metal design known in the art for an RF MOSFET. FIG. 2 is a cross-section view of the top metal design of FIG. 1, taken along line 2-2. As shown in FIGS. 1 and 2, the portion of the top metal design 10 includes two metal layers, Metal-1 and Metal-2, designated by reference numerals 12 and 14, respectively. Metal-1 layer 12 couples to the Metal-2 layer 14 with a metal via 16. In addition, Metal-2 layer 14 is separated from the Metal-1 layer 12 by an interlevel dielectric layer 18. In addition, the Metal-1 layer 12 has a width as indicated by reference numeral 20. Metal-2 layer 14 has a width as indicated by reference numeral 22. In one example, width 20 for Metal-1 layer 12 is on the order of 2.5 μm and width and width 22 for Metal-2 layer 14 is on the order of 11.2 μm. The top metal design 10 of FIG. 1 suffers from poor electromigration characteristics of the Metal-2 layer, and thus resulting in an inadequate electromigration MTTF (Mean Time To Failure). Electromigration is a wear out mechanism with a log normal failure rate (i.e., failures are not uniformly distributed over time).
In some LDMOS designs, gold is used which provides better electromigration lifetimes inherently. However, the use of gold prevents manufacture of the LDMOS product in standard CMOS fabs.
FIG. 1 is a top down diagram view of a portion of a top metal design for an RF MOSFET known in the art;
FIG. 2 is a cross-section view of the top metal design of FIG. 1, taken along line 2-2;
FIG. 3 is a top down diagram view of a portion of a metal design for an RF power transistor having drain metal finger branch widths within the Bamboo regime according to an embodiment of the present disclosure;
FIG. 4 is a cross-section view of the metal design of FIG. 3, taken along line 4-4;
FIG. 5 is a top down diagram view of a portion of a metal design for an RF power transistor having drain metal finger branch widths within the Bamboo regime according to one embodiment of the present disclosure;
FIG. 6 is an enlarged view of a portion of the top down diagram view of FIG. 5 to illustrate greater detail of the drain metal finger branches; and
FIG. 7 is a top down diagram view of a single finger of a metal design for an RF power transistor having drain metal finger branch widths within the Bamboo regime according to another embodiment of the present disclosure.
DETAILED DESCRIPTION FIG. 3 is a top down diagram view of a portion 50 of a metal design for an RF power transistor having drain metal finger branch widths within the Bamboo regime according to an embodiment of the present disclosure. In particular, the portion 50 comprises one end of a single RF power transistor drain finger. FIG. 4 is a cross-section view of the metal design of FIG. 3, taken along line 4-4. As shown in FIGS. 3 and 4, the portion of the metal design 50 includes two metal layers. Metal-1 is designated by reference numeral 52. Metal-2 is designated by reference numerals 54-1, 54-2, and 54-3, collectively referred to herein by 54. Metal-2 layer 54-1 forms one branch of one section of an RF power transistor drain finger and Metal-2 layer 54-2 forms another branch of the one section of the finger, wherein the RF power transistor drain finger extends from a low current carrying end to a higher current carrying end, as will be discussed further herein below. In other words, for the given section of the drain finger, Metal-2 layer 54-1 and layer 54-2 comprise two parallel metal lines. In addition, a portion of Metal-2 layer 54-3 couples to a first branch and to a second branch of the given section of the RF power transistor drain finger. The portion of Metal-2 layer indicated by reference numeral 54-3 is coupled to Metal-1 layer 52 with metal via 56. In FIG. 3, the interlevel dielectric 58 (FIG. 4) is not being shown and therefor a portion of Metal-1 layer 52 appears in solid lines in FIG. 3 and another portion appears in phantom, denoting that the corresponding portion of Metal-1 layer 52 appears at a level below Metal-2 layer 54. Similarly, in FIG. 3, metal via 56 is shown in phantom lines.
In one embodiment, Metal-2 layer 54 is the top metal layer of the metal design 50. Additional metal layers (not shown) may also be used, wherein the specific number of layers is determined according to a given RF power transistor design. As mentioned, Metal-1 layer 52 couples to the Metal-2 layer 54 with a metal via 56. In addition, Metal-2 layer 54 is separated from the Metal-1 layer 52 by an interlevel dielectric layer 58. Furthermore, the Metal-1 layer 52 has a width as indicated by reference numeral 60. The branches 54-1 and 54-2 of Metal-2 layer 54 include widths as indicated by reference numeral 62-1 and 62-2, respectively. In one embodiment, the widths 62-1 and 62-2 are on the same order, equal, or substantially equal. In another embodiment, the widths 62-1 and 62-2 are dissimilar, for example, in the case of a non-symmetrical RF power transistor device. In either case, the widths 62-1 and 62-2 are configured so that the metal conductors are in the bamboo regime. In other words, widths 62-1 and 62-2 are selected such that the width of each branch is smaller than an average grain size of the metal being used for that branch, wherein the metal branch width is maintained in the bamboo regime.
In one example, the width 60 for Metal-1 layer 52 is on the order of two-and-a-half microns (2.5 μm) and widths 62-1 and 62-2 for Metal-2 layer 54-1 and 54-2, respectively, are on the order of five microns (5.0 μm). In addition, the Metal-1 layer thickness is on the order of 1.5 μm and the thickness of the Metal-2 layer is on the order of 3.6 μm. In one embodiment, Metal-2 layer 54 comprises aluminum and the branch widths 62-1 and 62-2 place branches 52-1 and 52-2 in the bamboo regime. Accordingly, the top metal design 50 of FIG. 3 does not suffer from poor electromigration characteristics of the Metal-2 layer, and thus provides an improved electromigration MTTF (Mean Time To Failure).
Black's equation, which governs electromigration MTTF, is:
MTTF=(A/J 2)exp(Φ/kT), where
A=process constant, function of metal material and geometric properties
Φ=activation energy for process
T=conductor temperature.
The embodiments of the present disclosure make use of Black's equation, in that the metal design layout embodiments of the present disclosure have a direct influence on variables A, J, and T. In other words, the embodiments of the present disclosure comprise novel metal designs configured to significantly enhance the electromigration characteristics of the metal of the metal design. In addition, the metal lines of the metal design are maintained in the bamboo regime.
A historical electromigration strategy has been to characterize relatively wide metal lines that avoid narrow line enhancement effects, i.e., to avoid the so-called �bamboo� regime. However, the historical design is a worst-case approach that simplifies top metal design. Furthermore, no matter what linewidth is used, the actual MTTF of the historical design will be no worse than, and for most lines greater than, the calculated MTTF.
In contrast, according to the embodiments of the present disclosure, the metal design incorporates relatively narrow, parallel metal conductors to ensure bamboo regime operation. As a result, the metal design according to the embodiments of the present disclosure dramatically enhances the electromigration robustness of the drain metal design. Furthermore, the embodiments of the present disclosure can be used to produce RF power transistor devices or RF LDMOS devices that are extremely reliable. In one embodiment, the metal design is a top metal design.
For a calculated reliability, calculated with a linear failure rate approximation, using the top metal design of FIG. 3, for an RF MOSFET output stage at 900 MHz at a given set of rated operating conditions (Pout=89.1 W, ηdc=49%, Gain=19 dB, ΘJC=0.45� C./W. Tcase=95� C., and Tj=138� C.), resulted in a calculated MTTF of 1160 years. In contrast, for a calculated reliability of a historical design of FIG. 1 at rated operating conditions, resulted in a calculated MTTF of 361 years. Accordingly, the embodiments of the present disclosure provide an MTTF that is dramatically improved over the MTTF of the historical design.
FIG. 5 is a top down diagram view of a portion 70 of a metal design for an RF power transistor having drain metal finger branch widths within the Bamboo regime according to one embodiment of the present disclosure. As shown in FIG. 5, the metal design includes a drain pad 72 having a plurality of drain fingers 74, each drain finger extending from a distal end 76 to a proximate end 78. The distal end 76 of drain finger 74 is configured for a first current density remote from the drain pad 72, whereas the proximate end 78 is configured for a second current density proximate the drain pad 72, wherein the second current density is higher than the first current density. The particular current densities, as well as the number of drain fingers, are determined according to the requirements of a given RF power transistor design application. For example, in one embodiment, the number of fingers 74 is one-hundred and thirty (130).
Further with respect to FIG. 5, the metal design 70 includes a gate pad 80 having a plurality of gate fingers generally indicated by reference numeral 82. Each gate finger 82 extends from a distal end to a proximate end. The distal end of the gate finger 82 is remote from the gate pad 80, whereas the proximate end is proximate the gate pad 80. Each gate finger 82 further includes portions 84 that protrude perpendicular to the principal finger, wherein each protruding portion couples to an underlying portion of a gate electrode.
Referring still to FIG. 5, reference numeral 90 highlights a portion of metal design 70, to be further discussed with respect to FIG. 6. In particular, FIG. 6 is an enlarged view of portion 90 of the top down diagram view of FIG. 5 to illustrate greater detail of the drain metal finger branches 74. As noted above, each drain finger 74 extends from a distal end 76 to a proximate end 78, i.e., proximate the drain pad 72. Drain current of the corresponding RF power transistor device (not shown) passes through each drain finger 74, in the direction of the drain pad 72 as indicated by the arrow 92. In addition, the current density at the distal end 76 is less than the current density at the proximate end 78 of a drain finger.
In the embodiment of FIG. 5, each drain finger 74 includes a first section (or segment) 74-1 and a second section (or segment) 74-2. Note that while only two sections are shown, additional sections are also possible, wherein the number of sections depends upon the particular requirements of a given RF power transistor application. The transition between the first section 74-1 and the second section 74-2 is indicated by reference numeral 94. Each section of the drain finger 74 is designed to handle up to a certain maximum current density. Transition region 94 represents an end to the first section and a beginning of the second section. In one embodiment, the current density capacity of first section 74-1 at transition region 94 corresponds to an upper limit to the maximum current density for the first section 74-1. No additional transition regions are present in the illustrated drain fingers 74 of FIGS. 5 and 6, since the second section 74-2 is sufficient for handling the maximum current density of current accumulated along the entire finger, from the distal end 76 to the proximate end 78. Accordingly, each of the drain finger sections has a length dimension such that the maximum current density allowable, further with respect to a cumulative metal line width for the corresponding section of the drain finger, is not exceeded.
For example, arrows 96 are each representative of a given density of drain current. The first section 74-1 of drain finger 74 is capable of handling four quantities of the drain current represented by arrows 96. The second section 74-2 is capable of handling a total of eight quantities of the drain current represented by arrows 96, four quantities of which were accumulated by the first section 74-1.
FIG. 7 is a top down diagram view of a single finger 100 of a metal design for an RF power transistor having drain metal finger branch widths within the Bamboo regime according to another embodiment of the present disclosure. As shown in FIG. 7, drain finger 100 extends from a distal end 102 to a proximate end 104 (i.e., proximate end 104 being proximate a drain pad of an RF power transistor device (not shown)). The distal end 102 of drain finger 100 is configured for a first current density remote from the drain pad (not shown), whereas the proximate end 104 is configured for a different current density proximate the drain pad (not shown), wherein the current density at the proximate end is higher than the current density at the distal end. Drain current of a corresponding RF power transistor device (not shown) passes through each section of drain finger 100, in the direction of the drain pad, wherein the current density at the distal end 102 is less than the current density at the proximate end 104 of the drain finger.
In the embodiment of FIG. 7, drain finger 100 includes a first section (or segment) 100-1, a second section (or segment) 100-2, and a third section (or segment) 100-3. Note that while only three sections are shown, additional sections are also possible, as indicated by the � . . . � and reference numeral 106, wherein the number of sections depends upon the particular requirements of a given RF power transistor application. The transition between the first section 100-1 and the second section 100-2 is indicated by reference numeral 108. The transition between the second section 100-2 and the third section 100-3 is indicated by reference numeral 110. Each section of the drain finger 100 is designed to handle (or have a current density capacity) up to a certain maximum current density. Transition region 108 represents an end to the first section and a beginning of the second section. In one embodiment, the current density capacity of first section 100-1 at transition region 108 corresponds to an upper limit to the maximum current density for the first section 100-1. In addition, the current density capacity of second section 100-2 at transition region 110 corresponds to an upper limit to the maximum current density for the second section 100-2. No additional transition regions are present in the illustrated drain finger 100 of FIG. 7, since the third section 100-3 is sufficient for handling the maximum current density of current accumulated along the entire finger, from the distal end to the proximate end, for a given embodiment. Accordingly, each of the drain finger sections has a length dimension such that the maximum current density allowable, further with respect to a cumulative metal line width for the corresponding section of the drain finger, is not exceeded.
For example, arrows 112 are each representative of a given density of drain current. The first section 100-1 of drain finger 100 is capable of handling four quantities of the drain current represented by arrows 112. The second section 100-2 is capable of handling a total of eight quantities of the drain current represented by arrows 112, four quantities of which were accumulated by the first section 100-1. In addition, the third section 100-3 is capable of handling a total of twelve quantities of the drain current represented by arrows 112, four quantities of which were accumulated by the first section 100-1, and four quantities of which were accumulated by the second section 100-2. In this example, each arrow 112 represents a similar amount of drain current.
Further with respect to FIG. 7, the first section 100-1 comprises two metal layers, Metal-1 (shown in phantom lines) indicated by reference numeral 114 underlying Metal-2, which is designated by reference numeral 116. Metal-2 layer 116 forms one section 100-1 of RF power transistor drain finger 100. Metal-2 layer 116 is coupled to an underlying Metal-1 layer 114 with metal via 118 (shown in phantom lines). In addition, an interlevel dielectric 120 is disposed between the first and second metal layers.
Further as shown in FIG. 7, the second section 100-2 of drain finger 100 comprises two metal layers, similar to that as described with respect to the portion 50 of metal design of FIG. 3. In particular, Metal-1 is designated by reference numeral 114, and is a continuation of the Metal-1 of the first section 100-1. Metal-2 is designated by reference numerals 116-1, 116-2, and 116-3, collectively referred to herein by 116. Metal-2 layer 116-1 forms one branch of section 100-2 of the drain finger 100 and Metal-2 layer 116-2 forms another branch of section 100-2 of the drain finger 100. In other words, for section 100-2 of the drain finger 100, Metal-2 layer 116-1 and layer 116-2 comprise two parallel metal lines. In addition, a portion of Metal-2 layer 116-3 couples to the first branch and the second branch of section 100-2 of the RF power transistor drain finger. The portion of Metal-2 layer indicated by reference numeral 116-3 is coupled to Metal-1 layer 114 with metal via 118-2. In FIG. 7, the interlevel dielectric 120 is shown and therefor Metal-1 layer 114 within section 100-2 appears in phantom, denoting that the corresponding portion of Metal-1 layer 114 appears at a level that is below Metal-2 layer 116. Similarly, in FIG. 7, metal via 118-2 is shown in phantom lines.
Still further as shown in FIG. 7, the third section 100-3 of drain finger 100 comprises two metal layers, similar to that as described with respect to the portion 50 of top metal design of FIG. 3. Metal-1 is designated by reference numeral 114, and is a continuation of the Metal-1 of the second section 100-2, with the exception that now Metal-1 comprises two parallel lines of metal. In another embodiment, Metal-1 layer 114 of the third section 100-3 could also be a single line continuation of the Metal-1 line of the second section 100-2, wherein the Metal-1 layer would occur below branch 116-41 and be coupled to Metal-2 layer 116 with a suitable via, similar to 118-3. Metal-2 is designated by reference numerals 116-11, 116-21, 116-31, and 116-41 collectively referred to herein by 116. Metal-2 layer 116-11 forms one branch of section 100-3 of the drain finger 100, Metal-2 layer 116-21 forms another branch of section 100-3 of the drain finger 100, and Metal-2 layer 116-41 forms yet another branch of section 100-3 of the drain finger 100. In other words, for section 100-3 of the drain finger 100, Metal-2 layer 116-11, layer 116-41, and layer 116-21 comprise three parallel metal lines. In addition, two portions of Metal-2 layer 116-31 couple to the first branch, the second branch, and the third branch of section 100-3 of the RF power transistor drain finger 100, as shown. The portions of Metal-2 layer indicated by reference numeral 116-31 are coupled to Metal-1 layer 114 with metal vias 118-3. In FIG. 7, the interlevel dielectric 120 is shown and therefor Metal-1 layer 114 within section 100-3 appears in phantom, denoting that the corresponding portion of Metal-1 layer 114 appears at a level that is below Metal-2 layer 116. Similarly, in FIG. 7, metal vias 118-3 are shown in phantom lines.
In one embodiment, Metal-2 layer 116 is the top metal layer of the metal design drain finger 100. Additional metal layers (not shown) may also be used, wherein the specific number of layers is determined according to a given RF power transistor design. In addition, in another embodiment, Metal-2 layer 116 could comprise a metal layer other than the top metal layer. As mentioned, Metal-1 layer 114 couples to the Metal-2 layer 116 with metal vias 118. In addition, Metal-2 layer 116 is separated from the Metal-1 layer 114 by an interlevel dielectric layer 120. In addition, the Metal-1 layer 114 has a given width. The branches of Metal-2 layer 116 include given widths. In one embodiment, the widths of the branches of Metal-2 layer 116 are on the same order, equal, or substantially equal. In particular, the branch widths of Metal-2 layer 116 are configured so that the metal conductors are in the bamboo regime. In other words, the branch widths of Metal-2 layer 116 are selected such that the width of each branch is smaller than an average grain size of the metal being used for that branch, wherein the metal branch width is maintained in the bamboo regime.
In addition, the width(s) of the Metal-2 layer 116 in a transition region (for example region 108 or 110) between adjacent sections of the drain finger will vary from a first width(s) at a distal end 122 to a second width at a proximate end 124. The first width(s) corresponds to a metal branch width needed to maintain the metal line in the bamboo regime. For any given transition region, the second width is determined as a function of the number of branches contained in the subsequent section. In other words, the second width is sufficient for accommodating the total widths of the initial portions (i.e., corresponding to the lower current density end) of the branches contained in the next section of the drain finger. Note also that the particular shape of the transition region(s) can be of a shape or shapes other than what is shown in the figures.
According to one embodiment of the present disclosure, there is provided an RF power transistor with a metal design comprising a drain pad and a plurality of metal drain fingers extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal, each section of metal including one or more branch of metal having a metal width maintained within a bamboo regime. The metal width for the bamboo regime comprises a width that is smaller than an average grain size of the metal of the drain finger. In one embodiment, the at least one metal drain finger can comprise a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad. Furthermore, the first section of metal can comprise a single branch of metal and the second section of metal can comprise two parallel branches of metal. In another embodiment, the metal drain fingers comprise a top metal.
According to another embodiment, the metal drain finger comprises a number of sections of metal, each section of metal including one or more branch of metal having a metal width maintained within the bamboo regime and wherein for any two succeeding sections, a distal section of the two contains at least one less branch than a proximate section of the two. In addition, the metal drain finger can comprise three sections of metal, a first section having one branch and being coupled to a second section having two parallel branches, the second section further being coupled a third section having three parallel branches. Furthermore, the first section is distal from the drain pad and the third section is proximate the drain pad.
According to still another embodiment, an RF power transistor with a metal design comprises a drain pad and a plurality of metal drain fingers extending from the drain pad. Each metal drain finger comprises one or more sections of metal, each section of metal including of one or more branch of metal having a metal width maintained within a bamboo regime, wherein the metal width for the bamboo regime comprises a width that is smaller than an average grain size of the metal of the drain finger. In another embodiment, the metal drain finger comprises a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad. Furthermore, the first section of metal can comprise a single branch of metal and the second section of metal can comprise two parallel branches of metal.
According to yet another embodiment, the metal drain finger comprises a number of sections of metal, each section of metal including one or more branch of metal having a metal width maintained within the bamboo regime and wherein for any two succeeding sections, a distal section of the two contains at least one less branch than a proximate section of the two. In a further embodiment, the metal drain finger can comprise three sections of metal, a first section having one branch and being coupled to a second section having two parallel branches, the second section further being coupled a third section having three parallel branches. Still further, the first section is distal from the drain pad and the third section is proximate the drain pad.
According to a further embodiment, there is provided a method of making an RF power transistor with a metal design. The method comprises providing a drain pad and extending a plurality of metal drain fingers from the drain pad. At least one metal drain finger comprises one or more sections of metal, each section of metal including one or more branch of metal having a metal width maintained within a bamboo regime. In one embodiment, the metal width for the bamboo regime comprises a width that is smaller than an average grain size of the metal of the drain finger. In another embodiment, extending includes extending at least one metal drain finger that includes a first section of metal and a second section of metal, the first section of metal being distal from the drain pad and the second section being proximate the drain pad. In addition, the first section of metal can include a single branch of metal and the second section of metal can include two parallel branches of metal.
In yet another embodiment, extending the metal drain finger comprises extending a number of sections of metal, each section of metal including one or more branch of metal having a metal width maintained within the bamboo regime and wherein for any two succeeding sections, a distal section of the two contains at least one less branch than a proximate section of the two. Furthermore, extending the metal drain finger can comprise extending three sections of metal, a first section having one branch and being coupled to a second section having two parallel branches, the second section further being coupled a third section having three parallel branches, still further wherein the first section is distal from the drain pad and the third section is proximate the drain pad.
According to the embodiments of the present disclosure, rather than have a single metal drain line which lowers current density to a level which achieves a certain level of electromigration lifetime, the drain finger metal line is divided into two or more parallel narrower lines. The widths of these narrow lines are designed to ensure that the lines operate in the bamboo regime (i.e. the linewidth is less than the mean grain size of the metal being used for the metal line). As the linewidths of the metal lines enter the bamboo regime, their corresponding electromigration lifetimes increase dramatically since there are fewer migration pathways along grain boundaries. In one embodiment, the metal lines comprise aluminum or any other metal selected according to the requirements of a given RF power transistor application.
The embodiments of the present disclosure advantageously allow equivalent electromigration lifetimes to be achieved with narrower linewidths avoiding capacitance penalties that degrade RF performance, or for an equivalent total drain linewidth, the lifetime can be dramatically improved, thus improving reliability.
In the foregoing specification, the disclosure has been described with reference to the various embodiments. However, one of ordinary skill in the art appreciates that various modifications and changes can be made without departing from the scope of the present embodiments as set forth in the claims below. Accordingly, the specification and figures are to be regarded in an illustrative rather than a restrictive sense, and all such modifications are intended to be included within the scope of the present embodiments. For example, one embodiment of the present disclosure includes an RF-LDMOS 125 W power transistor used for example, in a mobile communication device or the like. The embodiments of the present disclosure can also apply to any suitable RF MOSFET devices.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5587590 *Nov 3, 1994Dec 24, 1996Nec CorporationTest piece for X-ray inspectionUS5633738 *May 25, 1995May 27, 1997Hitachi, Ltd.TFT substrate having scanning lines of metal films of columnar crystal grainsUS6365918 *Oct 12, 1999Apr 2, 2002Telefonaktiebolaget Lm Ericsson (Publ)Method and device for interconnected radio frequency power SiC field effect transistorsUS6417571 *Mar 1, 2000Jul 9, 2002Advanced Micro Devices, Inc.Single grain copper interconnect with bamboo structure in a trenchUS6417572 *Jul 16, 1999Jul 9, 2002International Business Machines CorporationProcess for producing metal interconnections and product produced therebyUS6670639 *Jun 21, 2000Dec 30, 2003Nec CorporationCopper interconnectionUS20040238871Mar 11, 2004Dec 2, 2004Infineon Technologies AgSemiconductor deviceUS20050112866Nov 23, 2004May 26, 2005Nec Electronics CorporationSemiconductor device and method of manufacturing the same* Cited by examinerNon-Patent CitationsReference1 *Averbuch et al., Surface evolution in bare bamboo-type metal lines under diffusion and electric field effects, Journal of Computational Physics, 188, 2003, pp. 640-677.2 *Hau-Riege et al., Microstructural evolution induced by scanned laser annealing in Al interconnects, Applied Physics Letters, Sep. 6, 1999, vol. 75, No. 10, pp. 1464-1466.3 *Hau-Riege et al., Use of scanned laser annealing to control the bamboo grain length of Cu interconnects, Applied Physics Letters, Jul. 17, 2000, vol. 77, No. 3, pp. 352-354.4 *Hawkins et al., Test and Reliabilitly: Partners in IC Manufacturing Part 1, IEEE Design & Test of Computers, Jul.-Sep. 1999, pp. 61-71.5 *Kusuyama et al., Experimental Study of Electromigration at Bamboo Grain Boundariers with a New Test Structure Using the Single-Crystal Aluminum Interconnection, IEEE Transactions on Semiconductor Manufacturing, vol. 9, No. 1, Feb. 1996, pp. 15-19.6 *Kwok, Effect of Metal Line Geometry on Electromigration Lifetime in Al-Cu Submicron Interconnects, IEEE International Reliability Physics Symposium, 1988, pp. 185-191.7 *Ogurtani et al., Electromigration-induced void grain-boundary interactions: The mean time to failure for copper interconnects with bamboo and near-bamboo structures, Journal of Applied Physics, vol. 96, No. 12, Dec. 15, 2004, pp. 7246-7253.8PCT/US07/62963 International Search Report and Written Opinion.9 *Tseng et al., Some practical considerations for effective and efficient wafer-level reliability control, Microelectronics Reliability, 44, 2004, pp. 1233-1243, (specifically p. 1239, section 3.2, first paragraph).* Cited by examinerClassifications U.S. Classification257/341, 257/E29.12, 257/401International ClassificationH01L29/76Cooperative ClassificationH01L23/66, H01L2924/01033, H01L29/4238, H01L2924/13091, H01L2924/30105, H01L2924/01074, H01L29/41758, H01L24/02, H01L29/7835, H01L2924/01079, H01L2924/01013, H01L2924/01006, H01L2924/01019European 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Gewandhaus Orchestra Plans Brahms Concerts - The New York Times
Archives|Gewandhaus Orchestra Plans Brahms Concerts
https://nyti.ms/29vG17L
Gewandhaus Orchestra Plans Brahms Concerts
The Gewandhaus Orchestra of Leipzig will give four concerts devoted wholly to the music of Johannes Brahms, at Avery Fisher Hall next Sundayat 7:30 P.M. and Feb. 24, 26 and 28 at 8 P.M. Under the direction of Kurt Masur, the orchestra will play the four symphonies; the First Piano Concerto, with Garrick Ohlsson as soloist; the Violin Concerto, with Kyung-Wha Chung as soloist, and the German Requiem, with the soprano Elisabeth Soederstroem, the baritone Theo Adam and the Westminster Choir.
Tickets, at $25, $17.50 and $12 for each concert, are available at the box office, 874-2424, or through CenterCharge, 874-6770.
A version of this article appears in print on February 17, 1986, on Page C00018 of the National edition with the headline: Gewandhaus Orchestra Plans Brahms Concerts. Order Reprints| Today's Paper|Subscribe

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i need help! does it magnettically attach!!!, 29 Sep 2013
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The gaze is upon you | india | Hindustan Times
Intelligence cooperation serves as a powerful tool to achieve global influence, writes Vikram Sood.
Intelligence cooperation or liaison, as it is called, is not a game for the novice or the uninitiated. Only a select few in an intelligence organisation are normally allowed to handle the arrangements, that too, after having worked in the system for years. Intelligence cooperation goes beyond mere exchange of information. It can include help to upgrade abilities and facilities in each other’s countries. It is a vital and safe channel of communication, even in the absence of diplomatic relations or near rupture in the same. In today’s world, intelligence liaison has become fair game for all. Spying on friends is not taboo in this game and the best time to make inroads is when relations are warm and comfortable.
Heads of government have quite often used their intelligence chiefs to convey sensitive messages to their counterparts or maintain contact with each other, especially when, in the absence of formal relations, there was need for political deniability. Effective intelligence is also a by-product of sound relationship and trust between the intelligence chief and the chief executive of a country.
Intelligence cooperation need not only be a bilateral arrangement. Immediately after the end of World War II, the English-speaking victors of the war — the US, Canada, Britain, Australia and Canada — got together to exchange information about the common threat, which was the Soviet Union at that time. Communications intelligence was exchanged by these countries. At times, this intelligence was extended to uncomfortable political opponents who could not be covered by agencies because of domestic laws that prohibited such espionage. In the Eighties, the exchange evolved into Project Echelon, which graduated from exchanging processed intelligence to ‘raw’ intercepts. Echelon monitors about 120 satellites all over the world and includes non-military communications of governments, business houses, private establishments and individuals.
When stories about the Echelon leaked — that one section of the allies was snooping on the other — the French and Germans were livid. There was uproar in the European Parliament and the US and British were accused of “State-sponsored information piracy”. There were suspicions, even accusations, that the US used this system to advise its negotiators in trade talks with Japan. On other occasions, it was apparently used to help Boeing beat Airbus in the deal with Saudi Arabia and to clinch the Enron deal with India, beating the British bid this time.
The volume of traffic intercepts is indeed huge; the volume of international telephone traffic, including that from cellphones, is now estimated to be approximately 200 billion seconds a year. Any communication sent into space is susceptible to monitoring. Thus, there exists the need for massive downstream activity to process this. Reliance on key words and voice recognition has its problems; the former can cause communications traffic jams and the latter is not completely reliable.
In addition, reconnaissance satellites — ‘vacuum cleaners’ that sweep in everything and take high resolution photographs — are used to keep the globe under watch. These can detect nuclear blasts, warn of missile launches and record the telemetry of missile flights. Bases located at varied points all over the world help download this data. It could, perhaps, be comforting that one lives in such a stratospheric cocoon. On the other hand, it could be highly disconcerting to realise that we live in Orwell’s world.
The CIA and KGB maintained contacts with each other even when the Cold War temperatures were near freezing. At about the same time in the Eighties, the US had two listening posts in Qitai and Korla in the Xinjiang province to listen into Soviet Russia. The Germans also had an intelligence relationship with the Chinese service at least as far back as in the Eighties. French intelligence chief, Alexandre de Meranches, founder of the secretive Safari Club that included other friendly and trusted intelligence agencies, had foreseen Soviet intrusion into Afghanistan and had advised the newly-elected Ronald Reagan to prepare for a counter-offensive in Afghanistan.
Apart from the obvious influence mechanisms, the Western power elite functions in many secretive ways. In one of his earlier novels, Robert Ludlum had four powerful international individuals as the secret controllers of the world. It did not seem real then, as Ludlum’s multi-talented, covert cold warriors fought ruthless wars against enemies of the free world. But Ludlum obviously based some of his novels on the realities of the day and his fantasies were more real than those of General Musharraf.
There are other influential secret societies in the West, like the Bilderberg Group formed in 1954 by a small group of rich and powerful trans-Atlantic individuals to help keep Europe allied to the US and communism at bay. This group (named after the hotel in Arnhem, in the Netherlands, where they first met) remains an exclusive and secretive group that includes politicians, financiers, media moguls and the corporate world. The group allows no reporters, there is only an answering machine and no minutes are issued. This leads to various interpretations about its role. For instance, the Serbs blamed Bilderberg for the war that led to the ouster of Slobodan Milosevic.
Another secret society with a number of former intelligence officers as members is Pinay Circle (earlier known as the Cercle Violet). It is believed to be a secret Right-wing transnational intelligence and direct action group used to fight communism. The Circle is said to be mainly in the business of regime change in the West to keep the US and Europe close to each other. The group continues to exist although communism is no longer the threat it was. Its members have included Henry Kissinger, David Rockefeller, Zbigniew Brzezinski, (all three associated with the Bilderberg Group), George Soros, Paul Volcker, Turki Al-Faisal, former CIA chief William Colby, among other US, British and German intelligence officers. Nadhmi Auchi, a one-time Saddam Hussein confidante, was also a member of this secret group. British luminaries have included Lord Julian Amery and James Goldsmith. The Circle is also linked to other influential groups like the Heritage Foundation and Opus Dei, often through its members.
There were allegations that in the Seventies, the group helped in the downfall of British premiers Harold Wilson and Ted Heath, Australian Prime Minister Gough Whitlam and France’s President, Francois Mitterrand. Beneficiaries included Margaret Thatcher and Ronald Reagan.
Like any other system, intelligence functions best in a certain milieu. Many world powers have treated their intelligence services as an important sword-arm to provide internal security and to secure foreign policy objectives.
When the Mossad was hunting for the Black September terrorists in the Seventies, one of the agents had to masquerade as a woman. This agent was Ehud Barak, who later became the Israeli Prime Minister. Many others who headed their countries’ intelligence services switched to overt governance with ease and distinction. Bush Sr in the US was one; Andropov, Primakov and Putin in Russia; Kang Sheng and Chiao Shi in China were members of the Politburo; Hosni Mubarak looked after the Egyptian Intelligence during Sadat’s presidency.
In a world of globalised terror, economics and competition, the traditional threats to the developed world have changed. Democracy and its preservation is serious business, extending beyond the tinsel and glamour of the screen and the rhetoric at election rallies. The system of global surveillance with and against friends will remain, with all levers of control lying with the rich and powerful.

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Re: Rebirth of Today's Poll - Which is worse? Did I miss the thread about Pancake Tuesday? Again? Damn it.I never realized the appeal of cricket until i was invited to go day 2 of England vs. Pakistan in 2006. The match was interesting once I learned the rules however the drinking was outstanding. Unparalleled in my sporting experience. Reply to this post
Feb 20, 2009 9:13am Forum:
Re: Rebirth of Today's Poll - Which is worse? You've got that right - Guiness from 11.00am to 7.00pm, then you can go to the pub ! Reply to this post
Re: Rebirth of Today's Poll - Which is worse? You've got that right - Guiness from 11.00am to 7.00pm, then you can go to the pub !

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But the Premier League said relegation and promotion were part of its rules and added to the league's strength. Bevan hopes that a parliamentary inquiry into football governance would also help prevent the proposal.
"If we have four or five more new owners, that could happen." PREMIER LEAGUE FOREIGN OWNERS
QPR (Tony Fernandes) *Arsenal's Stan Kroenke is major shareholder
Nearly half of the Premier League's 20 clubs are under foreign ownership, with rules stipulating that if changes are to be made to the format, 14 clubs must vote in favour of any new reforms. Blackburn joined the likes of Manchester United, Manchester City, Liverpool and Chelsea in this class when they were taken over by Indian-owned Venky's Group last season. But the Premier League told BBC Sport that the move would be a non-starter, with the Football Association retaining the power to veto any proposals.
A Premier League spokesman said that they did not recognise LMA chief executive Bevan's claims, which come a week after the government demanded changes to the way that football is run .
Sports minister Hugh Robertson said that an FA-led licensing system would be brought in to safeguard against issues such as financial mismanagement, asset-stripping owners and tax avoidance. The government also asked for rules to manage club debts and an overhaul of the FA board. Last Wednesday, Liverpool's managing director Ian Ayre said the Premier League's overseas television revenues should be skewed in favour of big clubs . For the latest updates and reaction to this story read Sportsday Live . Have your say on Twitter via the hashtag #bbcsportsday.
Liverpool want breakaway TV deal	12 Oct 2011
Reds co-owner backs overseas game	05 Nov 2010
Football on the BBC	Radio 5 Live commentaries	Radio 5 Live Football Player	BBC Sport club pages	External sitePremier League	External siteLeague Managers Association	External siteThe FA	More from Football

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text:
Encyclopedia of traditional British rural sports (Livro, 2005) [WorldCat.org]
Título: Encyclopedia of traditional British rural sports
xiv, 301 pages ; 24 cm.
Adicionar etiquetas para "Encyclopedia of traditional British rural sports".
historic leasure studies(163 ítens)
atualizado 2009-05-26
<http://www.worldcat.org/oclc/57005595> # Encyclopedia of traditional British rural sports
a schema:CreativeWork, schema:Book ; library:oclcnum "57005595" ; library:placeOfPublication <http://dbpedia.org/resource/London> ; # London
schema:about <http://id.loc.gov/authorities/subjects/sh2010114537> ; # Sports--Great Britain
schema:about <http://dewey.info/class/796.0941/e22/> ; schema:bookFormat bgn:PrintBook ; schema:contributor <http://viaf.org/viaf/76440276> ; # Wray Vamplew
schema:contributor <http://experiment.worldcat.org/entity/work/data/363865133#Person/martin_john> ; # John Martin
schema:datePublished "2005" ; schema:description "Introduction -- List of entries -- List of contributors -- Contextual essay : traditional rural sports in Europe -- A-Z of traditional British rural sports."@en ; schema:exampleOfWork <http://worldcat.org/entity/work/id/363865133> ; schema:genre "Encyclopedias"@en ; schema:inLanguage "en" ; schema:isPartOf <http://experiment.worldcat.org/entity/work/data/363865133#Series/sports_reference_series> ; # Sports reference series.
schema:isPartOf <http://experiment.worldcat.org/entity/work/data/363865133#Series/routledge_sports_reference_series> ; # Routledge sports reference series
schema:name "Encyclopedia of traditional British rural sports"@en ; schema:productID "57005595" ; schema:publication <http://www.worldcat.org/title/-/oclc/57005595#PublicationEvent/london_new_york_routledge_2005> ; schema:publisher <http://experiment.worldcat.org/entity/work/data/363865133#Agent/routledge> ; # Routledge
schema:url <http://catdir.loc.gov/catdir/toc/ecip053/2004027375.html> ; schema:workExample <http://worldcat.org/isbn/9780415352246> ; umbel:isLike <http://bnb.data.bl.uk/id/resource/GBA502588> ; wdrs:describedby <http://www.worldcat.org/title/-/oclc/57005595> ; .
<http://dewey.info/class/796.0941/e22/> a schema:Intangible ; .
<http://experiment.worldcat.org/entity/work/data/363865133#Agent/routledge> # Routledge
<http://experiment.worldcat.org/entity/work/data/363865133#Person/martin_john> # John Martin
<http://experiment.worldcat.org/entity/work/data/363865133#Series/routledge_sports_reference_series> # Routledge sports reference series
a bgn:PublicationSeries ; schema:hasPart <http://www.worldcat.org/oclc/57005595> ; # Encyclopedia of traditional British rural sports
schema:name "Routledge sports reference series" ; .
<http://experiment.worldcat.org/entity/work/data/363865133#Series/sports_reference_series> # Sports reference series.
schema:name "Sports reference series." ; .
a schema:Intangible ; schema:name "Country life--Great Britain"@en ; .
<http://id.loc.gov/authorities/subjects/sh2010114537> # Sports--Great Britain
a schema:Intangible ; schema:name "Sports--Great Britain"@en ; .
<http://viaf.org/viaf/76440276> # Wray Vamplew
a schema:Person ; schema:familyName "Vamplew" ; schema:givenName "Wray" ; schema:name "Wray Vamplew" ; .
a schema:Person ; schema:birthDate "1961" ; schema:familyName "Collins" ; schema:givenName "Tony" ; schema:name "Tony Collins" ; .
<http://worldcat.org/isbn/9780415352246> a schema:ProductModel ; schema:isbn "041535224X" ; schema:isbn "9780415352246" ; .
<http://www.worldcat.org/title/-/oclc/57005595> a genont:InformationResource, genont:ContentTypeGenericResource ; schema:about <http://www.worldcat.org/oclc/57005595> ; # Encyclopedia of traditional British rural sports
<http://www.worldcat.org/title/-/oclc/57005595#PublicationEvent/london_new_york_routledge_2005> a schema:PublicationEvent ; schema:location <http://dbpedia.org/resource/New_York_City> ; # New York
schema:organizer <http://experiment.worldcat.org/entity/work/data/363865133#Agent/routledge> ; # Routledge

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text:
www.rightmove.co.uk/property/66483738
Purplebricks are delighted to offer to the sales market this three bedroom, semi-detached family home situated in the popular residential location of L16.
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To view this media, please visit the on-line version of this page at www.rightmove.co.uk/property-for-sale/property-66483738.html?premiumA=true
Disclaimer - Property reference 821886-1. The information displayed about this property comprises a property advertisement. Rightmove.co.uk makes no warranty as to the accuracy or completeness of the advertisement or any linked or associated information, and Rightmove has no control over the content. This property advertisement does not constitute property particulars. The information is provided and maintained by Purplebricks, covering Liverpool. Please contact the selling agent or developer directly to obtain any information which may be available under the terms of The Energy Performance of Buildings (Certificates and Inspections) (England and Wales) Regulations 2007 or the Home Report if in relation to a residential property in Scotland.
27 Oct 2017 105 Score Lane, L16 £210,000
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text:
Alibris ID 12101814589
Alibris ID 11876955625
Alibris ID 12020785309
This is an ex-library book and may have the usual library/used-book markings inside. Rebound by the library, . This book has hardback covers. In fair condition, suitable as a study copy. No dust jacket.
Alibris ID 13513631722
This is an ex-library book and may have the usual library/used-book markings inside. This book has hardback covers. In fair condition, suitable as a study copy. No dust jacket. Re-bound by library., 350grams, ISBN:
Alibris ID 13221609010
Alibris ID 13936507225
by Professor Roberto Franzosi

value: This website is is an online store that sells new books, used books, out-of-print books, rare books, and other media through an online network of independent booksellers.


text:
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text:
Microsoft Media Chief to Take a Leave - The New York Times
Archives|Microsoft Media Chief to Take a Leave
Microsoft Media Chief to Take a Leave
The executive who has led the Microsoft Corporation's difficult foray into the world of interactive media and Internet content is taking a leave, and the company said yesterday that he would return to a different job next year.
Pete Higgins, 40, vice president of the Interactive Media Group at Microsoft since late 1996, has been one of the closest lieutenants of William H. Gates, the chairman. But his most recent assignment, to try to make the company a dominant player in the world of new media, has had disappointing financial results.
Microsoft executives stressed that Mr. Higgins's decision to take a leave was a personal one. In a statement, Mr. Higgins said he had decided to take time off to spend more time with his family. ''I look forward to coming back and immersing myself in the next challenge,'' he said.
Several analysts said, however, that the company had continued to struggle in its effort to gain financial momentum in several content areas. The Interactive Media Group has also gone through shake-ups and has had some layoffs.
In September, the company reorganized its Internet business under a single brand strategy based on its MSN label. Despite heavy investment, however, the company has stopped giving out numbers on its subscriber base for the MSN service.
Mr. Higgins was originally the product manager for the company's popular Excel spreadsheet program and later oversaw the growth of the company's integrated Office suite of applications.
A version of this article appears in print on November 11, 1998, on Page C00023 of the National edition with the headline: Microsoft Media Chief to Take a Leave. Order Reprints| Today's Paper|Subscribe


text:
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