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Patent US7500392 - Solid state microanemometer device and method of fabrication - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign in<nobr>Advanced Patent Search</nobr>PatentsThe invention is a solid state microanemometer and a method of making thereof. Specifically, the invention relates to a microanemometer including an electrically conductive resistor in the form of a semiconductor wafer doped with an impurity having an upper surface, a lower surface having a peripheral...http://www.google.com/patents/US7500392?utm_source=gb-gplus-sharePatent US7500392 - Solid state microanemometer device and method of fabricationAdvanced Patent SearchPublication numberUS7500392 B1Publication typeGrantApplication numberUS 11/870,612Publication dateMar 10, 2009Filing dateOct 11, 2007Priority dateOct 11, 2007Fee statusPaidAlso published asCA2702049A1, DE602008005779D1, EP2201336A1, EP2201336B1, WO2009048918A1Publication number11870612, 870612, US 7500392 B1, US 7500392B1, US-B1-7500392, US7500392 B1, US7500392B1InventorsThomas E. Plowman, Warren R. JewettOriginal AssigneeMemsys, Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (34), Referenced by (1), Classifications (10), Legal Events (2) External Links: USPTO, USPTO Assignment, EspacenetSolid state microanemometer device and method of fabricationUS 7500392 B1Abstract The invention is a solid state microanemometer and a method of making thereof. Specifically, the invention relates to a microanemometer including an electrically conductive resistor in the form of a semiconductor wafer doped with an impurity having an upper surface, a lower surface having a peripheral edge; a substrate bonded to the semiconductor wafer having an upper surface, a cavity having a peripheral edge and a peripheral margin defined on the upper surface and bounded by the peripheral edge of the cavity wherein the lower surface of the semiconductor wafer rests on and is supported by at least part of the peripheral edge of the cavity such that the semiconductor wafer is over the cavity; and a means for electrically connecting the resistor to a current source. The microanemometer also includes a plurality of metal conductors in contact with the resistor. The semiconductor wafer has sloped sidewalls and the metal conductors are placed on sloped sidewalls of the wafer to effectively increase available active area of the resistor.
1. A microanemometer comprising:
a) an electrically conductive resistor formed from a semiconductor wafer doped with an impurity, said resistor having
1) a resistor upper surface;
2) a resistor lower surface having a resistor peripheral edge;
3) resistor sloped sidewalls;
wherein the resistor sloped sidewalls are more heavily doped with an impurity than the resistor upper surface;
b) a substrate bonded to the semiconductor wafer, said substrate having
1) substrate upper surface;
2) a substrate lower surface;
3) a cavity having a cavity peripheral edge on the substrate upper surface, wherein a plurality of projections formed on the substrate upper surface extend inwardly over the cavity peripheral edge, and wherein the resistor lower surface is supported by at least part of the projections such that the resistor is suspended over the cavity; and
c) a plurality of metal conductors in contact with the resistor sloped sidewalls.
2. The microanemometer according to claim 1, further comprising a passivation layer on the front-side of the microanemometer.
3. The microanemometer according to claim 2, wherein the passivation layer is etched to reduce thermal mass.
4. The microanemometer according to claim 3, wherein the etched area of the passivation layer includes an opening on the top surface of the sensor layer to open said surface to the ambient.
5. The microanemometer according to claim 1, wherein the microanemometer is encapsulated in a package constructed from Flame Resistant 4, glass, or other machinable or moldable material having suitable thermal and electrical properties.
6. The microanemometer according to claim 5, wherein the electrical connection between the package and microanemometer is made using a thermo-compression bond.
7. The microanemometer according to claim 1, wherein sidewalls of the substrate are sloped.
8. The microanemometer according to claim 1, wherein the resistor sloped sidewalls are doped with an impurity that enhances resistor-to-metal conductor contact.
9. The microanemometer according to claim 1, wherein the metal conductors contact the resistor along the entire length of the resistor sloped sidewalls.
10. The microanemometer according to claim 1, wherein the metal conductors terminate in the form of front side bond pads situated on opposite ends of the resistor.
11. The microanemometer according to claim 10, comprising an isolation layer having etched features in the form of vias situated below the front side bond pads.
12. The microanemometer according to claim 11, wherein the substrate has etched features in the form of through hole vias that are aligned with the isolation layer vias.
13. The microanemometer according to claim 12, wherein the through holes vias are insulated with an electrically non-conductive material.
14. The microanemometer according to claim 12, wherein the through holes vias are made conductive by implanting a conducting element therein.
15. The microanemometer according to claim 14, wherein the conductive element is a metal filament.
16. The microanemometer according to claim 15, wherein the conductive element is held in place at the front side bond pad and back side with a conductive paste.
17. The microanemometer according to claim 12, wherein the through hole vias are made conductive by filling the through hole vias with a conductive paste.
18. The microanemometer according to claim 1, wherein the substrate layer projections are in the form of a bilateral, linear array of support ribs that at least partially span a gap opened by the cavity underneath the resistor.
19. The microanemometer according to claim 18, wherein the bilateral, linear array of support ribs join each other by spanning the entire gap opened by the cavity underneath the resistor.
20. The microanemometer according to claim 1, comprising a thermal isolation material partially filling the cavity.
21. The microanemometer according to claim 1, wherein the device is formed from a pre-bonded silicon-on-insulator wafer. Description
FIELD OF THE INVENTION This invention is a micromachined solid state microanemometer having an improved substrate support with side contacting metal conductors, through-wafer electrical interconnects, and a passivation layer. This invention also includes a preferred embodiment providing for front side electrical contacts. The microanemometer described herein is sensitive to low fluid flow rates and is rugged enough to operate in harsh environments of liquids, gases, and semi-solid suspensions.
BACKGROUND OF THE INVENTION A thermal anemometer is a device used to measure liquid and gas flow rates. Thermal convection of heat from an actuated sensor to the ambient environment is the primary transduction mechanism. That is, as heat is conducted away from the device, a thermo-resistive change takes place in the transducer which causes the electrical state of the device to change. This change in electrical state is measured either directly or indirectly through, for example, a Wheatstone bridge.
The thermo-resistive active area of the sensor is typically a hot wire or hot film of metal with a known temperature dependent resistance. The active area must be heated to some temperature above the ambient temperature, or else thermal convection does not occur. Current driven through the thermo-resistor serves to heat the active area according to Joule's First Law.
Thermal anemometers are normally operated in one of three modes: constant current, constant voltage, or constant temperature. In each case, the current, voltage, or temperature of the device is maintained as the flow rate changes. The change in device temperature, as already explained, causes a concomitant change in resistance. Constant current circuits are preferable when the amount of current needs to be precisely controlled to prevent adverse effects, such as overheating, which can lead to premature device failure.
Because the conductors are generally small and thermal conduction noise minimal, hot wire anemometers are often considered the preferred method for flow rate measurement. However, hot wire anemometers tend to be expensive to fabricate and fragile. For this reason, hot film anemometers are often preferred.
In hot film anemometry, the active layer is a thin metal film (such as platinum) or semiconductor (such as silicon) supported by a flat insulating layer. Many hot metal film anemometers are open bridge configurations where the active film is minimally supported by a thin membrane over a cavity. While the thin membrane (e.g., silicon dioxide) reduces the thermal conduction loss pathways, it also leads to device failure in extreme temperature and flow conditions due to uncontrolled stress and strain.
In prior art, U.S. Pat. No. 5,310,449, U.S. Pat. No. 5,231,877, and U.S. Pat. No. 4,930,347, all to Henderson, methods of fabrication for current driven semiconductor film microanemometers are described. The silicon active element responds dynamically to changes in ambient temperature due to its well known intrinsic semiconducting properties. Devices from the '449, '877, and '347 patents to Henderson, were susceptible to failure due to thin nitride support bridges which carried the metal contacts from the bulk to the sensor. Although these devices showed excellent sensitivity and response time, their tendency to fail prematurely in harsh environments limited their application.
U.S. Pat. No. 6,032,527 to Genova, the entire contents of which are incorporated herein by reference, distinguished itself from such earlier art by devising a novel sensor support scheme. The bonded wafer approach proposed in the '527 patent included a slight overlap between the sensing and support layers that maximized ruggedness without significantly affecting sensitivity. The amount of overlap and thus ruggedness were predetermined by the intended end application of the sensor. The device according to Genova also included through-wafer interconnects instead of wire bonds. Top surface wire bonds used in the prior art were routes for failure in high flow applications where the bonds could be sheared or acted to significantly impede the flow. Not only did the through-wafer electrical interconnects devised by Genova reduce the likelihood of interconnect failure, but they also facilitated back side contact to the packaging, protected the interconnects from the ambient flowstream, and allowed for simplified front side passivation before dicing.
The active element of the hot film anemometer presented in this invention is a thin mesa of silicon supported by both a silicon dioxide membrane and silicon substrate, similar to the device in the '527 patent. Recent advances, however, in microfabrication, dry film resists, spin-on glass, engineered glasses and packaging techniques have allowed for numerous improvements in the art.
SUMMARY OF THE INVENTION The invention described herein is a micromachined anemometer having superior response, sensitivity and durability with improved packaging. The invention provides for more reliable ohmic contacts and their placement, a cavity for thermal isolation beneath the sensor layer, and an etched passivation layer. The microanemometer may also possess a cavity filled with a thermal insulator that provides support during fabrication. This microanemometer may be fabricated either on a silicon substrate or an engineered glass wafer. It also has through-wafer interconnects which can be implanted wires, sputtered or electroplated metal films, or conductive adhesives. A preferred embodiment is described, which integrates front side contacts with simple packaging. These and other features of the invention will be more readily appreciated in view of the following detailed description and drawings.
BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a solid state anemometer, according to one embodiment of the invention;
FIG. 2 is an alternate embodiment of the metal conductor 104 placement;
FIG. 3 depicts the conventional and an alternative embodiment of the sensor mesa 100 and cavity 306 overlap;
FIG. 4 is a cross sectional view of microanemometer 10 along line 4-4 of FIG. 2;
FIG. 5 is a cross sectional view of an implanted through-wafer interconnect, according to one embodiment of the invention;
FIG. 6 is a microanemometer 20, according to one embodiment of the invention;
FIG. 7 is a perspective view of packaged microanemometer 20, according to one embodiment of the invention.
FIG. 8 is a cross section view of packaged microanemometer 20 along line 8-8 of FIG. 7.
DETAILED DESCRIPTION OF THE INVENTION A perspective drawing of a solid state microanemometer 10, according to one embodiment of the invention, is shown in FIG. 1. While microanemometer 10 is shown as a single part, it is fabricated in batch for greater efficiency. As such, microanemometer 10 is machined from a silicon wafer comprising sensor mesa 100 the lower surface of which is bonded to the upper surface of a second silicon wafer which serves as the base (or handle) wafer 101. Sensor 100 wafer is typically between 5 and 50 microns in thickness and base wafer 101 is typically in the range of 200 to 600 microns in thickness. Sensor 100 and base wafer 101 are separated by a thermal insulating film of buried silicon dioxide (BOX) 102 which can be from 0.1 to 5 microns thick. Sensor mesa 100 layer is formed from a lightly doped (e.g. phosphorous) silicon wafer to a level between 1012 and 1016 atoms/cm3. Doping at this level provides increased sensitivity due to the exponential relationship between free carrier electron concentration and temperature. Doping may also be achieved with other shallow impurities such as boron over the same ranges as phosphorous, deep impurities such as gold to a range between 5�1014 and 1016 atoms/cm3, or a combination thereof.
A sequence of micromachining steps are performed on sensor 100 and base wafer 101 to achieve desired sensor mesa 100 and support structure topography. To produce ohmic contact between sensor 100 and metal conductors 104, sensor layer 100 is heavily doped (e.g. n+) with an impurity (e.g. phosphorous or boron) to a level of 1018 to 1021 atoms/cm3. This doping occurs in sensor 100 layer silicon directly beneath metal contacts 104 to a depth which is in the range of 0.1 to 10 microns. The doped regions are defined by lithographic patterns and diffusion of impurities to sensor 100 silicon layer, and are accomplished by a standard open tube phosphorous doping process.
Sensor mesa 100 is then formed from an anisotropic wet etch, typically potassium hydroxide (KOH), of unmasked areas of sensor 100 silicon wafer; this etch produces sloped sidewalls 107 around the perimeter of the masked areas. The BOX 102 is resistant to the KOH and effectively halts the wet etch once the unmasked sensor silicon has been etched away. The back side of base wafer 101 should be protected with, for example silicon dioxide, during this etch.
Vias 111 are etched through BOX 102 using either a wet or dry technique, such as buffered hydrogen fluoride (HF) or reactive CH3 ions, respectively. In either case, to properly pattern vias 111 for the etch, a thick photoresist (e.g. >10 microns thick) is required to coat the front side due to the topography produced by sensor 100. Vias 111 have diameters in the range of 75 to 250 microns. The selective oxide etch of the vias stops on the front side surface of base wafer 101. In the process, the protecting silicon dioxide on the back side of base wafer 101 is removed.
Next, a lift-off process is used to pattern the metal on the front side. Unlike prior techniques, metal bond pads 105 are positioned on opposite sides of sensor mesa 100. Again, a thick photoresist must be used to properly pattern sensor 100 front side topography. In the lift-off process either a negative resist with a re-entrant sidewall profile or a positive resist in combination with a lift-off enabler, such as for example Lift-Off Resists, LOR 5A, can be used to promote removal of metal after deposition. Metal conductors 104 and integral metal bond pads 105 are deposited using either a sputtering or rotating chuck evaporative process to ensure complete coverage of metal 110 along sloped sidewall 107 of sensor 100. A back-sputter may be run to remove unwanted oxide on the silicon surface of sensor 100 which would otherwise degrade the metal-silicon contact. The metal thickness ranges from 0.1 to 1.5 microns and may be a single metal such as Al, Au, Pt, Ni, Cu, Cr, W, Ti, or any combination thereof, including TiN, to produce a stable metal conductor 104 and integral bond pad 105. Unwanted metal and resist is removed using a heated bath of 1-methyl-2-pyrrolidinone (NMP) in a sonicator. Patterned metal conductors 104 and bond pads 105 are then annealed for a short time in a forming gas. Metal in bond pad 105 area also coats the base and sidewalls of vias 111.
Cavity 106 and through-wafer interconnect 109 are formed from a deep reactive ion etch (DRIE). Using the Bosch DRIE process, nearly vertical sidewalls with minimal sidewall scalloping can be produced. The DRIE is selective to silicon and proceeds from the back side of base wafer 101, which has been patterned and protected with a thick resist. The etch stops on BOX 102 inside cavity 106. The etch also stops inside through-wafer interconnect 109 on metal bond pad 105 at the base of via 111 leaving only a thin metal membrane.
The back side of base wafer 101 is passivated with a low pressure chemical vapor deposited (LPCVD) silicon dioxide. The silicon dioxide ranges from 1000 to 5000 Angstroms in thickness and electrically insulates the through-wafer interconnect 109, the back side of bond pad 105 and the back side of base wafer 101. A shadow mask is aligned to the back side of base wafer 101 and preferentially exposes areas for LPCVD silicon dioxide removal. Removing this silicon dioxide from the back side of bond pad 105 enables back-to-front electrical interconnection.
Next, a layer of metal is blanket sputtered on the back side of base wafer 101. The metal is preferably copper, since it easily adheres to dry film resists (commonly used for patterning layers with topography), but may also be Au or Ni. The thickness of the metal layer is in the range of 0.5 to 3 microns and sets the resistance of the back-to-front electrical interconnect. In a preferred embodiment, metal completely fills through-wafer interconnect 109 and is achieved by standard electroplating processes.
A layer of dry film resist is laminated and patterned onto the back side of base wafer 101. The dry film pattern tents over the openings of through-wafer interconnects 109 protecting the metal already sputtered therein. The dry film pattern also protects back side metal bumps 108. After dry film patterning, a metal etch removes all unprotected metal from the back side of base wafer 101. The front side sensor 100 is protected with an unpatterned dry film resist during this step. After etching, unwanted dry film resist is removed using N-Methylpyrrolidone (�NMP�).
Finally, a passivation layer 103 is blanket deposited on the front side of the microanemometer 10 surface. The passivation layer 103 may be parylene, siliconoxynitride, diamond like carbon (�DLC�), or any other material with suitable electrical and thermal properties. The passivation layer ranges in thickness from 100 Angstroms to 10 microns. An optional dry film resist and etch step can be used to selectively open the passivation layer above sensor 100 to create an active area 112 inside which direct contact between sensor 100 and ambient environment is established.
In an alternative embodiment, shown in FIG. 2, the metal conductors 204 contact sensor 100 on the sloped sidewalls 107 of the sensor mesa 100. There are two related advantages for contacting metal conductors 204 with the sensor mesa 100 in this fashion: electric field uniformity and sensor mesa 100 active area. In the conventional embodiment, in which metal conductors 104 make contact on the top of sensor 100, the electric field, in theory, arcs between conductors 104. Such electric field non-uniformity can result in uneven sensor 100 heating, especially for thick sensor 100 layers, which can cause unpredictable sensor response. Placing metal conductors 204 along the sides of the sensor 100 facilitates linear distribution of the electric field and thus provides a more uniform temperature profile inside sensor 100. As metal conductor 204 placement effectively increases the available active area 112 for sensor 100, the microanemometer 10 of the alternative embodiment can be miniaturized to achieve the same sensitivity as with a conventional device. In order to fabricate the device depicted by the alternative embodiment of FIG. 2, the previously described approach is followed except that the n+doping of sensor 100 occurs after the anisotropic wet etch of the sensor 100 silicon wafer. Both the deposition of the dopant and metal conductors 204 occur along the sidewall 107 of sensor 100.
In FIG. 3A, a slice of the base wafer 101 through the x-y plane depicts the conventional cavity and an alternative embodiment is shown in FIG. 3B. As illustrated by FIG. 3A, overlap between sensor mesa 100 (dashed line) and cavity 106 acts as support for sensor 100. The amount of overlap varies depending on application and ranges from 1% to 30%. An unavoidable result of the overlap is to allow heat to conduct from the sensor 100 to the base layer 101 through the BOX 102. Such conduction causes some degree of thermal loading of sensor 100 and can compromise sensitivity and response time in demanding applications. Thus, one may minimize the overlap between sensor 100 and base wafer 101 or increase the thermal resistance between the two. The cavity scheme 306 shown in FIG. 3B is meant to decrease heat conduction from sensor 100 to base wafer 101 while maintaining a satisfactory level of structural integrity. The support ribs 313 provide ample foundation for sensor 100 while the absence of overlap between support ribs 313 minimizes thermal conduction paths. Another cavity scheme involves support ribs which traverse the cavity and, therefore, fully support the mesa over the cavity. These schemes are presented as examples and are, in no way, meant to limit the scope of such cavity designs using support ribs. BOX 102 eliminates any openings between sensor mesa 100 and base wafer 101. Support of sensor 100 in cavity scheme 306 can be further enhanced by thickening BOX 102 (e.g. 2 to 5 microns).
A cross-section view of microanemometer 10 along the line 4-4 in FIG. 2 is shown in FIG. 4. The n+ diffused regions 414 are shown as doped into the sensor 100 sidewall 107. A sacrificial layer 415 of spin-on glass or another thermally insulating material is shown partially filling the cavity. This sacrificial layer 415 is meant to support the sensor 100 during fabrication and is deposited immediately after the cavity etch. This sacrificial layer 415 does not completely fill the cavity and may be etched partially or completely away at the end of the process. Any sacrificial layer 415 material that remains after this process step strengthens microanemometer 10, without significantly altering sensitivity or response time.
An alternative embodiment of microanemometer 10 includes fabricating sensor 100 on an engineered glass base wafer 101 instead of silicon. The advantage of using a glass base wafer when compared to silicon is well understood in the art. Prior art describes the use of quartz, PYREX, or photosensitive glass for such purposes.
Referring again to FIG. 1, the silicon wafer for sensor 100 is bonded to an engineered glass base wafer 101 that has a similar coefficient of thermal expansion to silicon such as SD-2 glass from HOYA Corporation, USA. The engineered glass is ultrasonically milled, laser drilled, or etched with a micromachining process to form cavity 106 and through-wafer interconnect 109 before bonding. As a result of bonding sensor 100 to an engineered glass wafer, BOX 102 is no longer required nor is the LPCVD silicon dioxide used to passivate the through-wafer interconnect 109 surfaces. Furthermore, without BOX 102, vias 111 are not necessary. Metal deposited from the front side conformally coats through-wafer interconnect 109. Metal conductors contact sensor mesa 100 in either the embodiment 104 of FIG. 1 or the alternative embodiment 204 of FIG. 2. Metal conformally deposited and patterned from base wafer 101 back side connects metal bump 108 with front side metal bond pad 105 inside through-wafer interconnect 109 to complete the electrical path from base wafer 101 back side to sensor 100 conductor. Metal inside the through-wafer interconnect 109 may be thickened to desired resistance using standard electroplating techniques.
In some cases, using either a silicon or engineered glass base wafer 101, it may be preferable to form the through-wafer electrical connections by implanting a wire instead of by sputtering and electroplating methods. FIG. 5 illustrates how such a wire can be implanted. In this case, fabrication of microanemometer 10 follows the conventional steps already described except that no back side metal is deposited. Through-wafer interconnects 109 of base wafer 101 are covered with the same LPCVD silicon dioxide 516 as before. Prior to, or after, dicing microanemometer 10 into separate parts, a conductive wire 517 of appropriate diameter, in the range of 50 to 200 microns, is fed through base wafer 101 either manually or automatically with or without a guide needle. The conductive wire perforates 518 both the bond pad metal 105 inside of via 111 and the LPCVD silicon dioxide 516 underneath it as the wire threads through-wafer interconnect 109. Conductive adhesive 519 such as silver epoxy affixes conductive wire 517 to the front side bond pad metal 105. The same conductive adhesive is used to secure the wire on the back side of base wafer 101 to create a back side bump contact 520. Passivation 103 is carried out after application of the conductive adhesive.
Yet another embodiment exists for forming through-wafer electrical interconnects. In this embodiment, both the metal bond pad 105 and (LPCVD) silicon dioxide 516 are mechanically or reactive ion etch ruptured to form perforation 518. Microanemometers 10 are then separated by dicing and secured to a package by pressing them into bumps of conductive adhesive dispensed onto the package. Due to the pressure applied to set the microanemometer onto the package, the conductive adhesive wicks up through-wafer interconnect 109 and out through perforation 518 to contact metal bond pad 105. Minor modifications within the scope of the invention can be made to accommodate the latter two approaches when base wafer 101 is an engineered glass. Such modifications will be evident to those skilled in the art.
A preferred embodiment of microanemometer 20 is shown in FIG. 6. As in the conventional approach, sensor 100 is supported by base wafer 101 and is separated from base wafer 101 by BOX 102. Physical dimensions of the layers are similar to those already described. When assuming phosphorous doped silicon as the starting material for the sensor wafer, sensor 100 is doped as explained earlier with a high level of n+carriers directly beneath metal conductors 104. Sensor 100 is then formed from an anisotropic wet etch of unmasked areas of sensor 100 silicon wafer; this etch produces sloped sidewalls 107 around the perimeter of the masked areas. Cavity 106 is DRIE etched from the back side of base wafer 101.
Departing now from the conventional approach, base wafer 101 is anisotropically etched from the front side to create silicon mesa 621 in base wafer 101 with sloped sidewalls 622. The etch can be to a depth of 20% to 80% through base wafer 101 to create mesa sidewalls 622. An electrical insulating layer of silicon dioxide 624 is deposited (LPCVD) or grown (thermal oxidation) on the exposed silicon; this 1000 to 10,000 Angstrom thick oxide layer also covers the sloped sidewalls 622 of the base wafer 101. Front side metal contacts 605 and metal conductors 104 (or 204) are patterned using suitable lithographic processes which may include dry film resist, electrodeposition, or shadow masking; the preferred approach being dry film resist.
Deposited front side metal 623 may be Al, Au, Pt, Ni, Cu, Cr, W, Ti, or any combination thereof, including TiN. Front side metal 623 must span silicon mesa 621 sidewall 622 as well as sensor 100 sidewall 110 without a break in continuity. Front side metal contacts 605 are then used to connect directly to a package. Additionally, similar steps to the conventional approach may be followed to produce metal conductors 204 along the sides of sensor 100.
A passivation layer 103 is conformally deposited over the entire surface and selectively etched over metal contacts 605 and, optionally, over sensor active area 112 to allow direct interaction of sensor 100 with the ambient environment. Microanemometer 20 is secured to the package using a conductive adhesive, such as silver epoxy, or by a metal-to-metal thermo-compression bond. Packaging may occur before or after dicing microanemometer 20 into separate parts.
The sequence of process steps required to achieve microanemometer 20 of the preferred embodiment should be evident to those skilled in the art. Those skilled in the art will recognize alternative fabrication sequence steps may be employed to achieve the desired structure. Microanemometer 20 of FIG. 6 facilitates direct contact to packaging from the front side without need for wire bonds.
FIG. 7 is a perspective view of microanemometer 20 encapsulated by package 725. FIG. 8 is a cross section view along line 8-8 in FIG. 7. Package 725 may be constructed from FR4, glass, or other machinable or moldable material having suitable thermal and electrical properties. Fabrication may utilize conventional photolithographic circuit board techniques. A flat surface of package 725 is metalized and patterned by a photolithographic or screen printing process to produce contacts 726 on each end of package 725. Package contacts 726 are oriented to connect with base wafer metal 605. Package 725 may be mass produced in sheets. Microanemometer 20 may be press fit into each package using conventional pick and place assembly. Package opening 729 permits the active area of microanemometer 20 to be fully exposed to the subject flow for measurement.
Package 725 encapsulates microanemometer 20 such that the sensor 100 layer is flush with or slightly elevated above the top of the package 725. Mounting in a flush or slightly elevated fashion minimizes turbulence in ambient fluid flow 728. Package 725 preferably seals with microanemometer 20 along front side metal 623 of base wafer mesa 621 using a silicone sealant 727 or other suitable adhesive compound. Dispensing of the sealant occurs before the press-fit operation conducted in the pick and place operation. Electrical connection between package 725 and micronanemometer 20 is made using a conductive adhesive such as silver epoxy applied between package metal contacts 726 and base wafer metal contacts 605. As with the adhesive sealant 727, the conductive adhesive is dispensed prior to the pick and place operation. In an alternative embodiment, the electrical connection between package metal contacts 726 and base wafer metal contacts 605 may be made using a thermo-compression metal-to-metal bond.
While some preferred embodiments of the invention and a suggested method for manufacture and integration of the package have been described, applicant does not wish to be limited thereby, and it is to be understood that various modifications could be made without departing from the scope and spirit of the invention. Accordingly, it is to be understood that changes may be made without departing from the scope of the invention as particularly set out and claimed. Those changes would be apparent to those skilled in the art.
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Patent US4674503 - Controlled depth penetrant apparatus and method - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Advanced Patent Search | Sign inAdvanced Patent SearchPatentsA penetrant apparatus for controlling the depth that a penetrant device penetrates a material relative to its outer surface, where the cross-sectional thickness of the material is not susceptible to caliper-type measurement because its inner surface is inaccessible except by intrusive means, and a method...http://www.google.com/patents/US4674503?utm_source=gb-gplus-sharePatent US4674503 - Controlled depth penetrant apparatus and methodPublication numberUS4674503 APublication typeGrantApplication numberUS 06/240,728Publication dateJun 23, 1987Filing dateMar 5, 1981Priority dateMar 5, 1981Fee statusPaidPublication number06240728, 240728, US 4674503 A, US 4674503A, US-A-4674503, US4674503 A, US4674503AInventorsJames M. Grisolano, Jr., Gholam A. PeymanOriginal AssigneePeyman Gholam A, Grisolano Jr James MExport CitationBiBTeX, EndNote, RefManPatent Citations (16), Non-Patent Citations (2), Referenced by (64), Classifications (15), Legal Events (7) External Links: USPTO, USPTO Assignment, EspacenetControlled depth penetrant apparatus and methodUS 4674503 AAbstract A penetrant apparatus for controlling the depth that a penetrant device penetrates a material relative to its outer surface, where the cross-sectional thickness of the material is not susceptible to caliper-type measurement because its inner surface is inaccessible except by intrusive means, and a method for penetrating the material utilizing the apparatus. The apparatus comprises a penetrant device connected to and driven by driving apparatus, depth sensing apparatus, thickness sensing apparatus, and comparator apparatus. The depth sensing apparatus determines the depth of penetration of the penetrant device into the material while the thickness sensing apparatus determines the thickness of the material between its inner and outer surfaces. The comparator apparatus is connected to the depth sensing apparatus, the thickness sensing apparatus, and the driving apparatus and compares the depth of penetration of the penetrant device to the thickness of the material and control the driving apparatus so that the depth of penetration of the penetrant device relative to the material's outer surface so as to leave unpenetrated a portion of the material adjacent the inner surface.
We claim as our invention: 1. Apparatus for penetrating a material which has an outer surface and an inner surface, whereby said material is penetrated inwardly from said outer surface while leaving adjacent to said inner surface an unpenetrated portion thereof, comprising:penetrant means for penetrating said material; driving means connected to said penetrant means for advancing or retracting said penetrant means relative to the outer surface of said material; depth sensing means for determining the depth of penetration of said penetrant means into said material relative to said outer surface and generating a signal proportional thereto; thickness sensing means for determining the thickness of said material between the outer and inner surfaces of said material at a point directly adjacent to said thickness sensing means, which thickness sensing means determine the thickness of said material at substantially the point of penetration of said penetrant means and generate a signal proportional thereto, and; comparator means connected to said depth sensing means, thickness sensing means, and driving means, which compare said signal proportional to the depth of penetration of said penetrant means into said material relative to said outer surface to an input signal proportional to the desired unpenetrated thickness adjacent to the inner surface of said material and to said signal proportional to the thickness of said material at substantially the point of penetration of said penetrant means, said point serving substantially as a common reference point for said depth sensing means and said thickness sensing means which comparator means thereafter provide an output signal which controls said driving means so that the penetration of said penetrant means inwardly from the outer surface of said material is adjusted so as to leave unpenetrated a portion of said material adjacent the inner surface. 2. The apparatus of claim 1 wherein said comparator means provide an output signal whereby the penetration of said penetrant means is adjusted such that the unpenetrated portion of said material adjacent to said inner surface is of substantially uniform thickness.
SUMMARY OF THE INVENTION The present invention relates to an apparatus for and a method of penetrating a material which has an outer surface and an inaccessible inner surface, which apparatus and method satisfy the aforestated lackings and needs in the art by utilizing penetrant means whereby the penetration of said penetrant means is adjusted such that there remains unpenetrated a portion of material at a point adjacent to the inner surface that is a substantially uniform thickness or a substantially uniform proportion of the thickness of the material at said point.
BRIEF DESCRIPTION OF THE DRAWINGS For a more complete understanding of this invention reference should now be had to the several embodiments illustrated in greater detail in the accompanying drawings.
DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of this invention provide an apparatus powered by an external electrical power supply for penetrating a material which has an outer surface and an inner surface, whereby said material is penetrated inwardly from said outer surface while leaving adjacent to said inner surface an unpenetrated portion thereof. The apparatus preferably comprises penetrant means for penetrating the material to which driving means are connected for advancing or retracting said penetrant means relative to the outer surface of the material. The apparatus further comprises depth sensing means, thickness sensing means and comparator means. The depth sensing means determine the depth of penetration of said penetrant means into the material relative to the outer surface of the material and generate a signal proportional to the depth of penetration. The thickness sensing means determine the thickness of the material between the outer and inner surfaces of the material at a point directly adjacent thereto, said point also being substantially the point of penetration of said penetrant means. The thickness sensing means thereafter generate a signal proportional to said thickness.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS2328244 *Feb 24, 1941Aug 31, 1943Woodward William HCircular saw machineUS2565727 *Jun 25, 1949Aug 28, 1951Henderson Albert LPhotoelectric paring apparatusUS3076365 *Apr 7, 1958Feb 5, 1963American Cyanamid CoMachine for slitting tissuesUS3476112 *Dec 5, 1966Nov 4, 1969Elstein Jacob KSurgical instrument for removal of thin layersUS3555950 *Jun 9, 1969Jan 19, 1971Philips CorpApparatus for cutting a drawing in a layer of synthetic materialUS3670733 *Sep 14, 1970Jun 20, 1972Richard S CarlislePrecise depth cutterUS3756104 *Jun 23, 1972Sep 4, 1973Ppg Industries IncCutting of glassUS3848490 *Nov 2, 1973Nov 19, 1974Gerber Garment Technology IncMethod and apparatus for controlling a cutting toolUS3945279 *May 7, 1974Mar 23, 1976Krauss und ReichertProcess and apparatus for automatically cutting out work pieces in accordance with a patternUS4026295 *Jun 19, 1975May 31, 1977Lieberman David MSurgical knifeUS4154228 *Aug 6, 1976May 15, 1979California Institute Of TechnologyApparatus and method of inserting a microelectrode in body tissue or the like using vibration meansUS4180075 *Apr 5, 1977Dec 25, 1979Marinoff Gerald POphthalmological surgical instrumentUS4205682 *Sep 19, 1977Jun 3, 1980The University Of MelbourneContact lens corneal cutterUS4269192 *Jun 1, 1979May 26, 1981Olympus Optical Co., Ltd.Stabbing apparatus for diagnosis of living bodyUS4299230 *May 9, 1979Nov 10, 1981Olympus Optical Co., Ltd.Stabbing apparatus for diagnosis of living bodyUS4546773 *May 7, 1984Oct 15, 1985Accutome, Inc.Apparatus to measure conical thickness* Cited by examinerNon-Patent CitationsReference1Schachar et al, "Radial Keratotomy", Chapter XXIII, pp. 201-212 (1980).2 *Schachar et al, Radial Keratotomy , Chapter XXIII, pp. 201 212 (1980).* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS4732069 *May 8, 1987Mar 22, 1988Gerber Scientific Products, Inc.Knife and knife holder assemblyUS5133726 *Feb 14, 1990Jul 28, 1992Ruiz Luis AAutomatic corneal shaperUS5222967 *Apr 8, 1992Jun 29, 1993Magnum Diamond CorporationKeratorefractive diamond blade and surgical methodUS5308355 *Nov 6, 1992May 3, 1994Alexander DybbsOphthalmic surgical instrument and methodUS5376099 *Oct 20, 1993Dec 27, 1994Kmi, Inc.Undercut diamond surgical blade and method of using the sameUS5423813 *Mar 18, 1993Jun 13, 1995CoopersurgicalResectoscope and electrode assemblyUS5423840 *Jun 28, 1993Jun 13, 1995Chiron Vision CorporationKeratorefractive diamond blade and surgical methodUS5437657 *Aug 16, 1993Aug 1, 1995Epstein; Robert L.Instrument for ophthalmological surgeryUS5462739 *Nov 16, 1992Oct 31, 1995Yeda Research And Development Co., Ltd.Microdelivery device and method for enhanced drug administration to the eyeUS5486188 *Nov 15, 1993Jan 23, 1996Smith; Alan D.Keratoscopic surgical instrument for making radial and arcuate corneal incisionsUS5527328 *Nov 21, 1991Jun 18, 1996Pintucci; StefanoApparatus to automatically position and operate surgical instrumentsUS5533997 *Jun 29, 1994Jul 9, 1996Ruiz; Luis A.Apparatus and method for performing presbyopia corrective surgeryUS5601007 *Nov 22, 1994Feb 11, 1997Polaroid CorporationMedia tabbing apparatus and methodUS5611805 *May 2, 1995Mar 18, 1997Hall; Gary W.Method and device for determining placement of keratotomy incisionsUS5624456 *Feb 7, 1996Apr 29, 1997Hellenkamp; Johann F.Automatic surgical device for cutting a corneaUS5674233 *Nov 8, 1993Oct 7, 1997Dybbs; AlexanderOphthalmic surgical instrument and methodUS5779723 *Oct 29, 1996Jul 14, 1998Herbert Schwind Gmbh & Co. KgDevice for corneal surgeryUS5928129 *Jun 7, 1996Jul 27, 1999Ruiz; Luis AntonioApparatus and method for performing presbyopia corrective surgeryUS5951579 *Oct 6, 1997Sep 14, 1999Dykes; Ronald E.Incision guide for intra-ocular surgeryUS5980543 *Jan 2, 1998Nov 9, 1999Instituto Barraquer De AmericaMicrokeratome and method of performing corneal resectionsUS6007553 *Apr 24, 1998Dec 28, 1999Hellenkamp; Johann F.Automatic surgical device control assembly for cutting a corneaUS6030398 *May 30, 1997Feb 29, 2000Summit Technology, Inc.Surgical microtomesUS6051009 *Apr 25, 1997Apr 18, 2000Hellenkamp; Johann F.Automatic surgical device for cutting a cornea and a cutting blade assembly and control assemblyUS6099541 *Nov 30, 1998Aug 8, 2000Summit Technology, Inc.Surgical microtomesUS6165192 *Jan 5, 1999Dec 26, 2000Second Sight, LlcMethod and apparatus for intraocular retinal tack inserterUS6183488Nov 6, 1998Feb 6, 2001Med-Logics, Inc.Vacuum ring with linear bearings for an automated corneal shaperUS6228099Nov 20, 1998May 8, 2001Alexander DybbsOphthalmic surgical system and methodUS6296649Apr 29, 1997Oct 2, 2001Johann F. HellenkampAutomatic surgical device for cutting a corneaUS6302877Nov 6, 1998Oct 16, 2001Luis Antonio RuizApparatus and method for performing presbyopia corrective surgeryUS6358260Apr 20, 1998Mar 19, 2002Med-Logics, Inc.Automatic corneal shaper with two separate drive mechanismsUS6425905Nov 29, 2000Jul 30, 2002Med-Logics, Inc.Method and apparatus for facilitating removal of a corneal graftUS6428508Feb 1, 2000Aug 6, 2002Enlighten Technologies, Inc.Pulsed vacuum cataract removal systemUS6447526Mar 23, 2000Sep 10, 2002Cesar C. CarriazoDisposable microkeratome blade housingUS6527788Nov 4, 1999Mar 4, 2003Johann F. HellenkampAutomatic surgical device for cutting a cornea and a cutting blade assembly and control assembly thereforUS6540759Apr 9, 2001Apr 1, 2003Hawken IndustriesOphthalmic surgical system and methodUS6589057Sep 27, 2000Jul 8, 2003Becton, Dickinson & CompanyIncision trainer for ophthalmological surgeryUS6605099Oct 17, 2000Aug 12, 2003Johann F. HellenkampAutomatic surgical device and control assembly for cutting a corneaUS6626924Jun 1, 1998Sep 30, 2003Peter J. KlopotekSurgical microtomesUS6663644Jun 2, 2000Dec 16, 2003Med-Logics, Inc.Cutting blade assembly for a microkeratomeUS6682542 *Dec 12, 2000Jan 27, 2004William W. HarkriderEndoluminal knifeUS6699285Feb 9, 2001Mar 2, 2004Scieran Technologies, Inc.Eye endoplant for the reattachment of a retinaUS6702832Oct 15, 2002Mar 9, 2004Med Logics, Inc.Medical device for cutting a cornea that has a vacuum ring with a slitted vacuum openingUS6810781 *Mar 15, 2001Nov 2, 2004The Fletcher-Terry CompanyHead assembly for a cutting machineUS6843787Sep 4, 2001Jan 18, 2005Luis Antonio RuizApparatus and method for performing presbyopia corrective surgeryUS7166117Jan 31, 2002Jan 23, 2007Hellenkamp Johann FAutomatic surgical device and control assembly for cutting a corneaUS7311700Nov 29, 2000Dec 25, 2007Med-Logics, Inc.LASIK laminar flow systemUS7338508Sep 1, 2001Mar 4, 2008Azd Holding, Llc.Ophthalmic surgical system and methodUS7404637May 3, 2006Jul 29, 2008Boston Innovative Optics, Inc.System and method for increasing the depth of focus of the human eyeUS7404638Nov 22, 2005Jul 29, 2008Boston Innovative Optics, Inc.System and method for increasing the depth of focus of the human eyeUS7628810May 26, 2004Dec 8, 2009Acufocus, Inc.Mask configured to maintain nutrient transport without producing visible diffraction patternsUS7780631 *Nov 6, 2001Aug 24, 2010Pelikan Technologies, Inc.Apparatus and method for penetration with shaft having a sensor for sensing penetration depthUS7780689Mar 23, 2004Aug 24, 2010Technolas Perfect Vision GmbhBar-link drive system for a microkeratomeUS7976577Apr 14, 2005Jul 12, 2011Acufocus, Inc.Corneal optic formed of degradation resistant polymerUS8079706May 3, 2006Dec 20, 2011Acufocus, Inc.Method and apparatus for aligning a mask with the visual axis of an eyeUS8146263Aug 6, 2010Apr 3, 2012Hyman Jack KipnesErgonomic vernier caliper baseUS8235728Nov 13, 2005Aug 7, 2012Stuart StollApparatus for practicing ophthalmologic surgical techniquesUS8287592Jun 3, 2011Oct 16, 2012Acufocus, Inc.Ophthalmic devices having a degradation resistant polymerUS8343215Jul 29, 2008Jan 1, 2013Acufocus, Inc.System and method for increasing the depth of focus of the human eyeUS8460374Nov 30, 2005Jun 11, 2013Acufocus, Inc.Mask configured to maintain nutrient transport without producing visible diffraction patternsUS20130012978 *Jul 30, 2012Jan 10, 2013Richard SpaideSystem of instruments for vitrectomy surgery comprising sharp trochar, cannula and canula valve cap and method for its useUSRE35421 *Jul 27, 1994Jan 7, 1997Ruiz; Luis A.Automatic corneal shaperEP0771553A1 *Oct 18, 1996May 7, 1997Herbert Schwind GmbH & Co. KGDevice for corneal surgeryWO1994005225A1 *Aug 2, 1993Mar 17, 1994Robert L EpsteinInstrument for ophthalmological surgeryWO1994010918A1 *Nov 8, 1993May 26, 1994Alexander DybbsOphtalmic surgical instrument and method* Cited by examinerClassifications U.S. Classification606/166, 606/172, 83/881International ClassificationA61F9/013, A61B19/00, B26D3/08, B26D7/26Cooperative ClassificationA61B2019/462, B26D3/085, A61F9/0133, B26D7/2628, A61B2019/303European ClassificationA61F9/013K, B26D3/08B, B26D7/26CLegal EventsDateCodeEventDescriptionSep 29, 1994FPAYFee paymentYear of fee payment: 8Mar 16, 1993DPNotification of acceptance of delayed payment of maintenance feeNov 19, 1992SULPSurcharge for late paymentNov 19, 1992FPAYFee paymentYear of fee payment: 4Sep 3, 1991FPExpired due to failure to pay maintenance feeEffective date: 19910623Jun 23, 1991REINReinstatement after maintenance fee payment confirmedJan 23, 1991REMIMaintenance fee reminder mailedRotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google

type: global


text:
Women ponder how they became a campaign issue | Fox News
Women ponder how they became a campaign issue	Published May 12, 2012Associated Press
DENVER – Wanda Ramey stood on the University of Colorado campus, cane in one hand, "Close The Pay Gap" sign in the other. The rally for equal pay among women in the workplace was the 65-year-old spitfire's second stop in a day of meetings and protests.
Not all of these actions have received as much attention — or inspired as much controversy

value: This website is an American multinational conservative cable news television channel based in New York City. It is owned by Fox News Media, which itself is owned by the Fox Corporation.


text:
(Redirected from Queen Anne of Cleves)
Lutheran, then Anglican, then Roman Catholicism
Anne of Cleves (German: Anna von Kleve; 22 September 1515 – 16 July 1557)[1] was Queen of England from 6 January to 9 July 1540 as the fourth wife of King Henry VIII.[1] The marriage was declared never consummated and, as a result, she was not crowned queen consort. Following the annulment, she was given a generous settlement by the King, and thereafter referred to as the King's Beloved Sister.[2][3] She lived to see the coronation of Queen Mary I, outliving the rest of Henry's wives.[4]
Despite Henry's very vocal misgivings, the two were married on 6 January 1540 at the royal Palace of Placentia in Greenwich, London by Archbishop Thomas Cranmer. The phrase "God send me well to keep" was engraved around Anne's wedding ring. Immediately after arriving in England, Anne conformed to the Anglican form of worship, which Henry expected.[22] The couple's first night as husband and wife was not a successful one. Henry confided to Cromwell that he had not consummated the marriage, saying, "I liked her before not well, but now I like her much worse." He described her as having unpleasant body odour and sagging breasts, among other complaints.[23]
Anne was commanded to leave the Court on 24 June, and on 6 July she was informed of her husband's decision to reconsider the marriage. Witness statements were taken from a number of courtiers and two physicians which register the king's disappointment at her appearance. Henry had also commented to Thomas Heneage and Anthony Denny that he could not believe she was a virgin.[24]
Shortly afterwards, Anne was asked for her consent to an annulment, to which she agreed. Cromwell, the moving force behind the marriage, was attainted for treason. The marriage was annulled on 9 July 1540, on the grounds of non-consummation and her pre-contract to Francis of Lorraine. Henry VIII's physician stated that after the wedding night, Henry said he was not impotent because he experienced "duas pollutiones nocturnas in somno" (two nocturnal pollutions while in sleep; i.e., two wet dreams).[25][26] On 28 July, Henry married his fifth wife, Catherine Howard: on the same day Thomas Cromwell was executed, in theory for treason, but in practice as a scapegoat for the doomed German marriage.
Anne of Cleves' arms as queen consort.[27]
After Catherine Howard was beheaded, Anne and her brother, the Duke of Cleves, pressed the king to remarry Anne. Henry quickly refused to do so.[28] She seems to have disliked Catherine Parr, and reportedly reacted to the news of Henry's sixth marriage with the remark "Madam Parr is taking a great burden on herself."[29]
In March 1547, Edward VI's Privy Council asked her to move out of Bletchingley Palace, her usual residence, to Penshurst Place to make way for Thomas Cawarden, Master of Revels. They pointed out that Penshurst was nearer to Hever and the move had been Henry VIII's will.[30][31]
On 4 August 1553, Anne wrote to Mary I to congratulate her on her marriage to Philip of Spain.[32] On 28 September 1553, when Mary left St James's Palace for Whitehall, she was accompanied by her sister Elizabeth and Anne of Cleves.[33] Anne also took part in Mary I's coronation procession,[34][35] and may have been present at her coronation at Westminster Abbey.[36] These were her last public appearances. As the new Queen was a strict Catholic, Anne yet again changed religion, now becoming a Roman Catholic.[37][38]
After a brief return to prominence, she lost royal favour in 1554, following Wyatt's rebellion. According to Simon Renard, the imperial ambassador, Anne's close association with Elizabeth had convinced the Queen that "the Lady [Anne] of Cleves was of the plot and intrigued with the Duke of Cleves to obtain help for Elizabeth: matters in which the king of France was the prime mover".[39] There is no evidence that Anne was invited back to court after 1554.[40] She was compelled to live a quiet and obscure life on her estates.[40] After her arrival as the King's bride, Anne never left England. Despite occasional feelings of homesickness, Anne was generally content in England and was described by Holinshed as "a ladie of right commendable regards, courteous, gentle, a good housekeeper and verie bountifull to hir seruants."[4]
When Anne's health began to fail, Mary allowed her to live at Chelsea Old Manor, where Henry's last wife, Catherine Parr, had lived after her remarriage.[41] Here, in the middle of July 1557, Anne dictated her last will. In it, she mentions her brother, sister, and sister-in-law, as well as the future Queen Elizabeth, the Duchess of Suffolk, and the Countess of Arundel.[42] She left some money to her servants and asked Mary and Elizabeth to employ them in their households.[43] She was remembered by everyone who served her as a particularly generous and easy-going mistress.[4]
Anne died at Chelsea Old Manor on 16 July 1557, eight weeks before her forty-second birthday. The most likely cause of her death was cancer.[41] She was buried in Westminster Abbey, on 3 August,[44] in what has been described as a "somewhat hard to find tomb" on the opposite side of Edward the Confessor's shrine and slightly above eye level for a person of average height. She is the only wife of Henry VIII to be buried in the Abbey.
Anne's epitaph in Westminster Abbey, which is in English, reads simply:[45]
She also has the distinction of being the last of Henry VIII's wives to die,[4] as she outlived Henry's last wife, Catherine Parr, by 9 years. She was not the longest-lived, however, since Catherine of Aragon was 50 at the time of her death.[43]
Anne and her Holbein portrait in the Louvre are the focus of the novel Amenable Women (2009) by Mavis Cheek.[46] Anne and Catherine Howard are the subject of The Queen's Mistake by Diane Haeger (2009), while Anne and Jane Seymour are covered in Volume 3 of Dixie Atkins's tetralogy A Golden Sorrow (2010). D. Lawrence-Young authored a biographical novel "Anne of Cleves - Henry's Luckiest Wife" published by GMTA/Celestial Press. N.C. USA, 2013.
She appeared as a ghost in The Simpsons episode "Father Knows Worst" in 2009 to encourage Homer to let Bart learn from experience.[47]
In 2014, 2015 and 2017, an episode of Horrible Histories and its reboot called "Ridiculous Romances", "Horrid Henry VIII" and "Ridiculous Romantics" featured Martha Howe-Douglas, Katherine Jakeways and Gemma Whelan, portraying Anne of Cleves.
^ https://books.google.ca/books?id=MhY9AAAAIAAJ&pg=PA127&dq=Henry+VIII+execution+of+cromwell+later+regretted&hl=en&sa=X&ved=0ahUKEwiH8P_L0Z3VAhVJ44MKHdxECwQQ6AEIKDAA#v=onepage&q=Henry%20VIII%20execution%20of%20cromwell%20later%20regretted&f=false
Retrieved from "https://en.wikipedia.org/w/index.php?title=Anne_of_Cleves&oldid=794161556"
This page was last edited on 6 August 2017, at 07:22.

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Not a close shave | india | Hindustan Times
Updated: Oct 20, 2009 21:19 IST	Hindustan Times
The Indian Air Force seems to be caught in a hairy situation. To beard or not to beard is the question. Twin appeals from within its ranks, challenging the validity of its service rules proscribing personnel inducted after 2002 from growing a beard, have helped crash-land the IAF in the midst of a three-way battle — against personnel unhappy with such ‘secularism’ and the Supreme Court, unhappy with its fuzzy response to the issue.
Earlier this year, both the Haryana High Court and the apex court had justified the IAF’s defence of its no-beard-for-all policy citing that, in Islam, the beard was not compulsory as in Sikhism – Sikh personnel being the only ones allowed to sport an abundance of facial hair. So, while we can understand the ban on the overt display of religious accessories in the armed forces as being crucial in maintaining the secular ethos, what does baffle us is the security threat that a face full of fur might pose, now that the days of hand-to-hand combat are long past. For there was a time when beards could prove to be deadly handles for gaining access to the enemy’s throat for quick slitting.
Now, as long as a furry face does not impede the smooth functioning of cockpit controls, or interfere with quick missile launches, we say go for the grunge. But then, having knowingly signed on to a set of service rules, those seeking to sport the odd stubble are probably committing a breach of contract every bit as serious as walking into a gentlemen’s cigar club with flip flops and a sarong. So, pending a change in the house rules, or unless the top house rules, this could prove to be a quite a close shave for those protesting men in blue.

value: This website is an Indian English-language daily newspaper introduced and founded in 1924 by Sunder Singh Lyallpuri, founder-father of the Akali movement and the Shiromani Akali Dal in the Punjab Province. It played integral roles in the Indian independence movement as a nationalist daily.


text:
Women, development, and the UN : a sixty-year quest for equality and justice (Buch, 2005) [WorldCat.org]
Vielleicht haben Sie Interesse an diesem Titel http://www.worldcat.org/oclc/493225111 Titel: Women, development, and the UN : a sixty-year quest for equality and justice Verfasser: Devaki Jain; Amartya Sen Verlag: Bloomington, Ind. : Indiana University Press, cop. 2005. ISBN/ISSN: 0253346975 9780253346971 0253218195 9780253218193 OCLC:493225111
Extrait de la couverture : "In Women, Development, and the UN, internationally noted development economist and activist Devaki Jain traces the ways in which women have enriched the work of the United Nations from the time of its founding in 1945. Synthesizing insights from the extensive literature on women and development and from her own broad experience, Jain reviews the evolution of the UN's programs aimed at benefiting the women of developing nations and the impact of women's ideas about rights, equality, and social justice on UN thinking and practice regarding development. Jain presents this history from the perspective of the southern hemisphere, which recognizes that development issues often look different from the standpoint of countries in Africa, Asia, and Latin America. The history that Jain chronicles reveals both the achievements of committed networks of women in partnership with the UN and the urgent work remainiing to bring equality and justice to the world and its women." Weiterlesen…
Weitere Informationen zu: Devaki Jain Amartya Sen
Traces the ways in which women have enriched the work of the United Nations from the time of its founding in 1945. This book reviews the evolution of the UN's programs aimed at benefiting the women of developing nations and the impact of women's ideas about rights, equality, and social justice on UN thinking and practice regarding development. Weiterlesen…
"This is the 7th of a 14-volume comprehensive history of the United Nations (UN). The book begins with the UN's founding in 1945, when only 4 of the 160 signatories were women, from the Dominican Republic, Brazil, China, and the US. For gender scholars, political scientists, and academics, this is a detailed account of how women used their social capital, power, and networks to measure and highlight women's status around the world. Many familiar concepts and measures of gender inequality are traced to the UN's Commission on the Status of Women (CSW), a subcommittee established within the UN's first year. Equality, political suffrage, child marriage, widow rights, and all aspects ofwomen's visible and invisible work are a few of the measures and studies stemming from the commission. The book details the four global women's conferences (Mexico, Copenhagen, Nairobi, and Beijing). Surely, the impact on women's lives-particularly those of the south-is one of the UN's greatest accomplishments. Summing Up:Recommended. Most levels/librarie" -A. S. Hunter, Idaho State University Weiterlesen…
Schlagwörter hinzufügen für "Women, development, and the UN : a sixty-year quest for equality and justice". Tragen Sie als Erster Schlagwörter ein.

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Words that start with endozoan | Words starting with endozoan
http://www.thefreedictionary.com/words-that-start-with-endozoan
Dictionary, Encyclopedia and Thesaurus - The Free Dictionary 10,294,651,067 visitors served
Words that start with endozoan
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Social Muscle Club Tickets, Thu, Aug 16, 2018 at 7:30 PM | Eventbrite
Thu, August 16, 2018, 7:30 PM – 10:00 PM CDT
Social Muscle Club [www.socialmuscleclub.de] is a group of international artists who have been working together since 2012 to change our usual habits of thinking and doing and 'train the social muscle'. The club was founded for everyone in the global village seeking to support each other in a society in which one often feels alone. The club began in a Berlin living room and was inspired by a documentary about a workers club in Sheffield, English which promised 'entertainment and mutual support'. As a contrast to stress and pressure to a capitalistic, competitive working world, the club offers a self-organised social net. The Berlin founders of Social Muscle Club experienced personally the psychological effects of pressure to succeed, earn money, and fit in society. So they began practicing giving and receiving with friends and colleagues in their living room, in order to support each other. Since 2012 the club has grown exponentially and has reached thousands of people in ten international cities, including ongoing clubs in Berlin, Basel, Bristol, and Vienna. The club integrates people from different social backgrounds as well as people who normally don't visit or participate in the theatre scene, out of which a growing international network of solidarity has been established.
SAIC Department of Performance The School of the Art Institute of Chicago's (SAIC) Department of Performance was founded in an experimental spirit and is unique in the United States as one of the only contemporary performance departments in an art school at the undergraduate and graduate level focused on performance practice and performance studies.
Social Muscle Club at Defibrillator Performance Art Gallery [DFBRL8R]
Zhou B Art Center 1029 West 35th Street, Chicago, IL 60609
6402 S Honore St, Chicago

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Best scrum master certification Jobs, Employment | Freelancer
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value: This website is an Australian freelance marketplace website, which allows potential employers to post jobs that freelancers can then bid to complete. Founded in 2009, its headquarters is located in Sydney, Australia, though it also has offices in Vancouver, London, Buenos Aires, Manila, and Jakarta.


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Redhat Linux Server Administration | Engineering | Linux | MySQL | PHP | Software Architecture | Software Testing | UNIX
This project was awarded to skurkvw for $42.5 USD.
We have several Linux servers running and need some administration work: Server1 needs to get SpamAssassin installed. A secure installation without longer breaks in service. Only coder with experience and know what they do! Server2 is ready installed, but needs some corrections if it goes down after some hours without use. Additional installations on this server: time sincronisation, correction of proftp and mysql (mysql has problems and ftp works from xinetd, but need as a separate daemon. We are looking for an administrator working from time to time with us and has experience with serial ports also. We await your bid.
Really good and helpful worker. Good communication and answer all questions.
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Drafting Chairs & Stools Black Bar Stools - Walmart.com
Generated at Mon, 19 Aug 2019 23:56:46 GMT exp-ck: 1; xpa: 0RoeA|A7lRu|AyKRC|IBe97|M-aBU|Por_P|PvmcH|QxbgG|U34EG|ZfUQw|aT_ut|cE9i1|gfDke|hcucX|kLogO|lYUGY|lkSaP|pFeyy|plMLc|vStG1;
Electrode, Comp-701334129, DC-prod-dfw04, ENV-prod-a, PROF-PROD, VER-19.1.18-ebf3, SHA-32f9ec195ae25bcf369be025286fbba03ec90e19, CID-59f30414-84f-16cac4fccb1bf3, Generated: Mon, 19 Aug 2019 23:56:46 GMT
Other Temporary Classification Barstools Kitchen & Dining Chairs Office Chairs Drafting Chairs & Stools HOME & OUTDOOR Kitchen & Dining Tables
Desk Chairs Folding & Stacking Chairs
Delacora Flash Furniture HON MooreCo National Public Seating Safco Studio Designs
Adjustable Height Arms Back Support Ergonomic Mid Back No Arms Swivel Swivels Upholstery
© 2019 Walmart. All Rights Reserved. To ensure we are able to help you as best we can, please include your reference number: FFNXV52CPJ
Electrode, Comp-701341280, DC-prod-dfw5, ENV-prod-a, PROF-PROD, VER-19.1.18-ebf3, SHA-32f9ec195ae25bcf369be025286fbba03ec90e19, CID-78c49415-7e6-16cac4fccb154b, Generated: Mon, 19 Aug 2019 23:56:46 GMT
Electrode, Comp-139919024, DC-prod-dfw1, ENV-prod-a, PROF-PROD, VER-9.8.0, SHA-86f1adbda96d1cbfc1c5f4827757dc3301e04915, CID-1126271a-8d3-16cac4fcc3057c, Generated: Mon, 19 Aug 2019 23:56:46 GMT

value: This website is an American multinational retail corporation that operates a chain of hypermarkets , discount department stores, and grocery stores from the United States, headquartered in Bentonville, Arkansas.


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República Deportiva ("Sports Republic") is a weekly two-hour sports show on Spanish language United States television network Univision.
The show airs on Sundays and was initially hosted by Fernando Fiore, Jorge Gomez, and Rosana Franco. Fiore also served as the principal anchor for Univision's 1998 FIFA World Cup, 2002, 2006, and 2010 FIFA World Cup coverage. Gomez left the show in 2004 and was replaced by Felix Fernandez, an ex-soccer goalie in the Primera División de México, Mexico's First Division, the professional Mexican league. Franco was dismissed from the show in 2012, and Fiore was dismissed in 2014. Julian Gil officially replaced Fiore as the show's main host in 2015.
Because of its American audience, the program focuses much attention on Major League Baseball in the United States and sometimes NBA basketball. However, it gives constant attention to Primera División de México and the MLS, and some attention to association football leagues in other countries, mostly in Latin America. It also shows highlights of Italian, Spanish, English, and sometimes German football. There is also some coverage of other sports, such as boxing and Formula One motor racing.
This page contains text from Wikipedia, the Free Encyclopedia -	https://wn.com/República_Deportiva
Latest News for: republica deportiva
Univision's long-running, popular sports program, Republica Deportiva, which this year is celebrating its 20th anniversary, will be honored with the Award for Outstanding Achievement in Hispanic Television Programming....
Univision’s long-running, popular sports program, Republica Deportiva, which this year is celebrating its 20th anniversary, will be honored with the Award for Outstanding Achievement in Hispanic Television Programming....
Univision Deportes is also the exclusive home to shows such as Premios Univision Deportes, Solo Boxeo, Zona NBA, Republica Deportiva and Contacto Deportivo, the highest-rated Spanish-language sports studio show in the U.S., and delivers comprehensive coverage across platforms on all the latest from the NBA, NFL, MLB, and world of boxing....
NEW YORK, Dec 14, 2017 (BUSINESS WIRE) -- Univision Deportes, the multimedia sports division of Univision Communications Inc. (UCI) that also includes UDN (Univision Deportes Network), the No ... Univision Deportes is also the exclusive home to shows such as Premios Univision Deportes, Solo Boxeo, Zona NBA, Republica Deportiva, and Contacto Deportivo....
Hispanics are reshaping sports in America. With Hispanic Heritage Month upon us, SI is honoring the 30 most influential Latinos in sports who aren’t athletes ... Linda G. Alvarado ... Hometown ... Fiore is best known as the host of Republica Deportiva, a weekly sports show for Univision, and for anchoring Univision’s FIFA World Cup coverage from 1999 until 2014....
Univision Deportes is also the exclusive home to shows such as Premios Univision Deportes, Solo Boxeo, Zona NBA, Republica Deportiva and Contacto Deportivo, the highest-rated Spanish-language sports studio show in the U.S., and delivers comprehensive coverage across platforms on all the latest from the NBA, NFL, MLB, and world of boxing ... Club....
Source ... Univision Deportes is also the exclusive home to shows such as Premios Univision Deportes, Solo Boxeo, Zona NBA, Republica Deportiva and Contacto Deportivo, the highest-rated Spanish-language sports studio show in the U.S., and delivers comprehensive coverage across platforms on all the latest from the NBA, NFL, MLB, and world of boxing....

value: This website is a news aggregator founded in March 1995 and launched online in 1998. In 2003, Search Engine Watch praised the service for its "Special Reports", and called it "an interesting alternative" to other news aggregation services.