text:
Patent US6680150 - Suppression of side-lobe printing by shape engineering - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsSidelobe formation in photolithographic patterns is suppressed by non-rectangular, non-circular contact openings formed in attenuated phase shift photomasks. The contact openings may be diamond-shaped, star-shaped, cross-shaped, or various other shapes which include multiple vertices. The contact opening...http://www.google.com/patents/US6680150?utm_source=gb-gplus-sharePatent US6680150 - Suppression of side-lobe printing by shape engineeringAdvanced Patent SearchPublication numberUS6680150 B2Publication typeGrantApplication numberUS 09/866,137Publication dateJan 20, 2004Filing dateMay 25, 2001Priority dateMay 25, 2001Fee statusLapsedAlso published asUS20020177078Publication number09866137, 866137, US 6680150 B2, US 6680150B2, US-B2-6680150, US6680150 B2, US6680150B2InventorsJames W. Blatchford, Jr., Omkaram Nalamasu, Stanley PauOriginal AssigneeAgere Systems Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (4), Non-Patent Citations (23), Referenced by (19), Classifications (12), Legal Events (9) External Links: USPTO, USPTO Assignment, EspacenetSuppression of side-lobe printing by shape engineering
US 6680150 B2Abstract
Sidelobe formation in photolithographic patterns is suppressed by non-rectangular, non-circular contact openings formed in attenuated phase shift photomasks. The contact openings may be diamond-shaped, star-shaped, cross-shaped, or various other shapes which include multiple vertices. The contact opening shapes may include only straight line segments or they may include rounded segments. The contact openings may be arranged in various relative configurations such as in arrays in which the contact openings are sized and spaced by sub-wavelength dimensions. A method for forming contact openings on a photosensitive film uses the attenuated phase shift photomask to form a contact pattern free of pattern defects. A computer readable medium includes instructions for causing a photomask manufacturing tool to generate the attenuated phase-shift photomask.
What is claimed is: 1. An attenuated phase-shift photomask for suppressing side-lobe printing including contact structures being non-rectangular apertures for forming contact openings on a semiconductor substrate, said apertures each having a shape including a plurality of outwardly extending vertices which form angles less than 90 degrees, wherein said apertures suppress side-lobe printing.
2. The attenuated phase-shift photomask as in claim 1, in which said apertures are diamond-shaped.
3. The attenuated phase-shift photomask as in claim 1, in which said apertures are shaped as four pointed stars.
4. The attenuated phase-shift photomask as in claim 1, wherein said apertures are cross-shaped.
5. The attenuated phase-shift photomask as in claim 1, wherein said apertures each include an average diameter being less than 500 nanometers.
6. An attenuated phase-shift photomask for suppressing side-lobe printing having a plurality of non-rectangular contact structures, each being formed of a transmissive material, bounded by a partially transmissive area, and including a plurality of outwardly extending vertices which form angles less than 90 degrees, wherein said non-rectangular contact structures suppress side-lobe printing.
7. The attenuated phase-shift photomask as in claim 6, wherein each contact structure is symmetrical.
8. The attenuated phase-shift photomask as in claim 6, wherein said partially transmissive area allows 4-18% transmission of light.
9. The attenuated phase-shift photomask as in claim 6, in which each said contact structure comprises an enclosed geometrical shape having four sides, each side being centrally bowed inwardly such that each of the four corresponding vertices forms an angle being less than 90 degrees.
10. The attenuated phase-shift photomask as in claim 6, in which said plurality of contact structures includes four point star-shaped contact structures.
11. The attenuated phase-shift photomask as in claim 6, in which said plurality of contact structures includes diamond shaped contact structures.
12. The attenuated phase-shift photomask as in claim 6, in which said plurality of contact structures includes cross-shaped contact structures.
13. The attenuated phase-shift photomask as in claim 6, in which said photomask includes a mask pattern including said contact structures, and is a photomask of 10� magnification, said photomask adapted for producing a corresponding photo-pattern in a photosensitive film, which is reduced in size by a factor of 10 with respect to said mask pattern.
14. The attenuated phase-shift photomask as in claim 6, in which said plurality of contact structures includes contact structures which comprise an octagon defined by a repeating sequence of adjacent acute then obtuse angles.
15. The attenuated phase-shift photomask as in claim 6, wherein said contact structures each yield a corresponding generally round contact structure in a photosensitive material, when light is transmitted through said photomask and onto said photosensitive material.
16. The attenuated phase-shift photomask as in claim 6, wherein said contact structures are arranged in a two-dimensional array with adjacent contact structures spaced apart by 200 nanometers or less.
17. The attenuated phase-shift photomask as in claim 6, wherein said contact structures include an average diameter of less than 180 nanometers.
18. A method for forming contact openings on a semiconductor substrate while suppressing side-lobes comprising the steps of:
forming a photosensitive film over a substrate; providing an attenuated phase-shift photomask being generally flat and having opposed surfaces, said photomask having a pattern including a plurality of non-rectangular transmissive figures, each including a plurality of outwardly extending vertices which form angles less than 90 degrees, wherein said non-rectangular transmissive figures suppress side-lobes; and exposing contact areas on said photosensitive film by positioning said photomask in fixed position with respect to said substrate and providing a light source opposite the surface of said photomask facing said substrate, each of said contact areas corresponding to a transmissive figure. 19. The method as in claim 18, in which said pattern is projected onto said photosensitive film to form a corresponding photo-pattern and in which said step of exposing includes positioning a lens between said photomask and said substrate, such that said corresponding photo-pattern is reduced in size with respect to said pattern.
20. The method as in claim 18, in which said plurality of non-rectangular transmissive figures includes four point star-shaped contact structures.
21. The method as in claim 18, in which said plurality of non-rectangular transmissive figures includes diamond-shaped contact structures.
22. The method as in claim 18, in which said plurality of non-rectangular transmissive figures includes cross-shaped contact structures.
23. The method as in claim 18, in which said plurality of non-rectangular transmissive figures includes a two-dimensional array.
24. The method as in claim 23, wherein an average pitch of said non-rectangular transmissive figures in said two-dimensional array is not greater than two times the wavelength of light emitted from said light source.
25. The method as in claim 23, wherein said light source emits light having a wavelength λ and which is delivered from said photomask to said photosensitive film, through a lens having a numerical aperture NA, and wherein said non-rectangular transmissive figures of said array are spaced apart by a dimension defined as being no greater than 0.75 λ/NA.
26. The method as in claim 18, in which said step of exposing includes said light source emitting light having a wavelength λ and which is delivered from said photomask to said photosensitive film through a lens having a numerical aperture NA and in which said contact areas are generally round in shape and have an average diameter ranging from 0.3 λ/NA to 0.4 λ/NA.
27. The method as in claim 18, in which said step of exposing includes said light source emitting light having a wavelength λ and which is delivered from said photomask to said photosensitive film through a lens having a numerical aperture NA and wherein the average area of said non-rectangular transmissive figures is less than π[0.375 λ/NA]2.
28. The method as in claim 18, in which said attenuated phase-shift photomask includes said non-rectangular transmissive figures being bounded by partially transmissive areas which allow transmission of 4-18% of light therethrough.
29. The method as in claim 18, in which said contact areas are generally round in shape and further comprising the step of developing said exposed generally round contact areas.
30. The method as in claim 29, which said photosensitive film is formed on an insulating layer formed over said substrate and further comprising etching said generally round contact areas into said insulating layer thereby forming said contact openings.
31. The method as in claim 18, which said light source emits light having a wavelength being one of 193 nanometers and 248 nanometers.
32. The method as in claim 18, wherein said light source comprises an excimer laser.
33. A computer readable medium having stored thereon a set of instructions including instructions for generating an attenuated phase-shift photomask for suppressing side-lobe printing having a pattern including plurality of non-rectangular contact structures, each contact structure being formed of a transmissive material, bounded by a partially transmissive area, and including a plurality of outwardly extending vertices which form acute angles, wherein said non-rectangular contact structures suppress side-lobes.
34. A computer readable medium having stored thereon a set of instructions including instructions for generating a pattern generation tape for forming a pattern in an attenuated phase-shift photomask for suppressing side-lobe printing, said pattern including a plurality of nonrectangular contact structures, each including a plurality of outwardly extending vertices which form acute angles, wherein said non-rectangular contact structures suppress side-lobes.
35. A set of instructions as in claim 34, in which said pattern includes said contact structures arranged in a two-dimensional array, with adjacent contact structure spaced apart by 200 nanometers or less and said contact structures including an average diameter no greater than 180 nanometers.
36. A computer readable medium having stored thereon a set of instructions including instructions for generating an attenuated phase-shift photomask for suppressing side-lobe printing having a pattern including plurality of non-rectangular contact structures, each contact structure being formed of a transmissive material, bounded by a partially transmissive area, and including a plurality of outwardly vertices which form acute angles, wherein said non-rectangular contact structures suppress side-lobes, when said set of instructions are executed by at least one computer electronically connected to a photomask manufacturing system.
37. A method for generating an attenuated phase-shift mask for suppressing side-lobe printing, comprising the steps of:
providing a photomask manufacturing tool; providing a computer electronically connected to said photomask manufacturing tool; providing a computer readable medium having stored thereon a set of instructions including instructions for generating an attenuated phase-shift photomask having a plurality of non-rectangular contact structures, each including a plurality of outwardly extending vertices which form acute angles, wherein said non-rectangular contact structures suppress side-lobes and formed of a transmissive material, and; engaging said computer readable medium with said computer, thereby causing said computer to read said computer readable medium and communicate with said photomask manufacturing tool; and said computer electronically instructing said photomask manufacturing tool to generate said attenuated phase-shift photomask. 38. A method for generating an attenuated phase-shift mask for suppressing side-lobe printing, comprising the steps of:
providing a photomask manufacturing tool; providing a computer electronically connected to said photomask manufacturing tool; providing a pattern generation tape having stored thereon a set of instructions including instructions for generating a pattern on an attenuated phase-shift photomask, the pattern including a plurality of non-rectangular contact structures, each including a plurality of outwardly extending vertices which form acute angles, wherein said non-rectangular contact structures suppress side-lobes and formed of a transmissive material, and engaging said pattern generation tape with said computer, thereby causing said computer to read said pattern generation tape and communicate with said photomask manufacturing tool; and said computer electronically instructing said photomask manufacturing tool to generate said attenuated phase-shift photomask including said pattern. 39. The method as in claim 38, in which said set of instructions include instruction for generating said pattern to include a two-dimensional array of said contact structures, in which said contact structures include an average diameter no greater than 180 nanometers and are spaced apart by no greater than 200 nanometers.
40. A method for forming an attenuated phase shift mask using a single-layer pattern that suppresses side-lobes at the wafer level comprising:
forming a contact opening aperture of light transmissive material in an attenuated phase shift mask wherein said contact opening is shape engineered to reduce side-lobe formation at the wafer level by including multiple outwardly-extending vertices which form acute angles; and surrounding the contact opening aperture with a partially light transmissive area, wherein the light transmitted through the partially light transmissive area is phase shifted. 41. The method of claim 40 wherein said contact opening is shape engineered in the shape of a four-pointed star.
42. The method of claim 40 wherein said contact opening is shape engineered in the shape of a diamond.
The present invention relates, most generally, to a process and apparatus for manufacturing semiconductor devices. More particularly, the present invention is directed to forming sub-wavelength size contact openings using attenuated phase-shift photomasks.
Attenuated phase-shift masks (APSM's) are used extensively in small geometry semiconductor manufacturing to achieve process latitude and pattern resolution greater than achievable using conventional binary photomasks. In today's rapidly advancing semiconductor manufacturing industry, which includes increasingly high levels of integration and correspondingly small feature sizes, the use of APSM's is essential in the execution of state-of-the-art fabrication processes. APSM's are fabricated by replacing the opaque part of a conventional mask with a halftone film—one that is partially transmissive. The transmissivity of such a halftone film is generally on the order of about 10% transmission. The halftone film is chosen to desirably shift the phase of the light it transmits by 180 degrees. The light which passes through the clear area of the APSM, in contrast, is not phase shifted. In this manner, destructive interference occurs between interfering light which is out of phase.
One of the main problems with APSM's, however, is the printing of sidelobes, which are unwanted images in the final pattern caused by constructive interference between adjacent clear features in the photomask pattern when the adjacent clear features are closely spaced and are separated by a distance on the order of the exposure wavelength. The occurrence of sidelobes introduces spurious ring structures and windows in dense patterns, and is highly sensitive to the presence of any aberration and defocusing in the imaging system. Sidelobe printing is especially problematic for hole dimensions less than 0.5�λ/NA (where λ is the wavelength of light and NA is the numerical aperture of exposure tool), where high transmission masks must be used, and for 193 nm lithography, where current photoresists have insufficient surface inhibition to prevent sidelobe formation.
Several techniques have been used to attempt to alleviate the problem of printing unwanted features such as sidelobes. Each of these techniques includes associated shortcomings. One popular technique is underexposure. Using the underexposure technique, the pattern is printed at a lower dosage such that unwanted sidelobe features, which have a lower intensity than the main features, are not printed. A shortcoming associated with the use of this underexposure technique is that the main features are printed in smaller dimension. Additionally, the critical dimensions (CD's) are more sensitive to mask error and the depth of focus (DOF) is generally lower. Another technique is the RIM-type phase-shift mask. In RIM-type phase-shift masks, a layer of opaque material, usually chrome, is used to block out selected regions of the pattern such that the unwanted features are suppressed. A shortcoming of the RIM-type phase-shift mask is that such masks are more expensive than conventional APSM masks because of the additional complexity associated with designing, creating and aligning the chrome structures.
A third technique involves the use of auxiliary patterns as additional features on the mask, that, when properly designed and placed, suppress the intensity of the sidelobes. The auxiliary patterns may be rectangular transmission areas between closely spaced contact windows or a grid pattern for an array of contact windows. The auxiliary patterns are suitable for periodic patterns but cannot easily be generalized to non-periodic patterns. Generally speaking, auxiliary patterns occupy extra real estate on the mask and affect all of the features which surround the auxiliary pattern. A fourth technique, used to try to alleviate the problem of printing unwanted features such as sidelobes, is the manipulation of the illumination conditions. In general, interference decreases with decreasing coherence of the light waves. Lowering the coherence of the illumination sources can reduce the intensity of sidelobes but cannot eliminate sidelobe problems completely.
According to conventional photomask patterns, contact openings are produced in semiconductor devices by providing square apertures on the photomask to define a circular contact opening in the photo-pattern created in the photoresist at the wafer level. The present invention addresses shortcomings of the techniques in the prior art which attempted to prevent sidelobe formation, and presents clear contact opening apertures on attenuated phase-shift photomasks which prevent sidelobe formation even when the shape-engineered apertures are formed in tightly packed arrays.
The present invention provides an attenuated phase-shift photomask including contact structures which are non-rectangular apertures for forming contact openings on semiconductor substrates. The apertures each have a shape including multiple vertices. The present invention also provides an attenuated phase-shift photomask having multiple non-rectangular contact structures, in which the contact structures are formed of a transmissive material and bounded by a partially transmissive area, and include vertices which extend outwardly. When the array is used to form a corresponding array pattern in a photosensitive material, sidelobe formation is suppressed.
Another aspect of the present invention is a method for forming contact openings on a semiconductor substrate. The method includes the steps of forming a photosensitive film over a substrate, providing an attenuated phase-shift photomask including non-rectangular transmissive figures, each including outwardly extending vertices, and exposing contact areas on the photosensitive film by positioning the photomask in fixed position with respect to the substrate and providing a light source opposite the surface of the photomask which faces the substrate, such that each of the exposed contact areas correspond to a transmissive figure.
Another aspect of the present invention is the pattern formed in a photosensitive material. An exemplary pattern includes an array of tightly packed contact holes of small dimension, and the array is characterized by the absence of pattern defects interposed within the array.
Another aspect of the present invention is a computer readable medium. The computer readable medium includes a set of instructions for generating an attenuated phase-shift photomask having a pattern including non-rectangular contact structures, each contact structure being formed of a transmissive material, bounded by a partially transmissive area, and including outwardly extending vertices.
The present invention also provides a method for generating an attenuated phase-shift photomask. The method includes the steps of providing a photomask manufacturing tool and a computer electronically connected to the photomask manufacturing tool, providing a computer readable medium including instructions for generating an attenuated phase-shift photomask having non-rectangular contact structures, each including a plurality of outwardly extending vertices and formed of a transmissive material, and engaging the computer readable medium with the computer, such that the computer reads the computer readable medium and communicates with the photomask manufacturing tool and electronically instructs the photomask manufacturing tool to generate the attenuated phase-shift photomask.
It is to be understood that both the forgoing general description and the following detailed descriptions are exemplary, but not restrictive, of the invention.
The invention is best understood from the following detailed description when read in conjunction with the accompanying drawing. It is emphasized that, according to common practice, the various features of the drawing are not to scale. On the contrary, the dimensions of the various features are arbitrarily expanded or reduced for clarity. Like numerals denote like features throughout the drawing and specification. Included in the drawing are the following figures:
FIG. 1 is a plan view of exemplary shape-engineered contact openings formed on an APSM;
FIG. 2 is a plan view of another embodiment of exemplary shape-engineered contact openings formed on an APSM;
FIG. 3 is a plan view of yet another exemplary embodiment of shape-engineered contact openings formed on an APSM;
FIG. 4 is a plan view of still another exemplary embodiment of shape-engineered contact openings formed on an APSM; and
FIG. 5 is a perspective view showing an exemplary APSM including shape-engineered contact openings forming corresponding exposed contact structures in a photosensitive film formed on a substrate.
The present invention provides an attenuated phase-shift mask (APSM) manufactured using industry-known techniques and equipment such as a MEBES 4500 electron-beam exposure system. The APSM is used in a standard photolithography tool with conventional photoresist processing. According to conventional techniques, square or rectangular shaped apertures on a photomask are used to form contact holes in a photoresist pattern. The contact holes formed in a photoresist pattern, using the square-shaped apertures on the mask, are generally circular at the wafer level. In contrast, the present invention provides an APSM which includes “shape-engineered” contact openings formed of various different shapes. The contact openings in the APSM according to the present invention may be diamond-shaped, star-shaped, cross-shaped or one of various other non-rectangular, non-circular shapes which include multiple sharp corners or vertices. The shape-engineered APSM significantly reduces sidelobe formation at the wafer level.
The APSM's of the present invention may be used to form contact openings at multiple and various different processing levels in forming any of various semiconductor devices. The APSM may be a conventional photomask used in a projection lithography tool or a reticle used in a stepper. The APSM may be a “1�” mask or it may be configured to produce a corresponding pattern in a photosensitive material of reduced size. According to conventional industry standards, the APSM may be a 10� mask, a 5� mask, a 4� mask or a reticle of other degrees of magnification. In each case, the degree of magnification denotes the size of the mask relative to the size of the corresponding pattern it will be used to produce on a photosensitive film.
The contact openings formed in an APSM according to the present invention are clear areas or transmissive areas which allow for the transmission of light. The contact openings are bounded by a nearly opaque, or partially transmissive region which, together with the clear or transmissive areas, defines the mask pattern including the contact openings. A particular advantage of the present invention is that, when the shape-engineered contact openings within the APSM are formed in arrays which are tightly packed, the shape-engineered contacts prevent undesired sidelobe formation in the corresponding pattern formed in a photosensitive film. Sidelobe formation is prevented due to the shape of the shape-engineered contact openings and the phase-shift qualities of the APSM. Sidelobes are undesirable exposed features formed in the photoresist pattern due to the constructive interference of closely packed transmissive features. After the photoresist pattern is developed and etched, sidelobes result in undesirable physical features being formed in a semiconductor device.
Exemplary shapes of the various shape-engineered contact openings formed in an APSM according to the present invention, are illustrated in the accompanying figures. Preferably, the shape-engineered contacts include a clear or transmissive area bounded by a partially transmissive material. The partially transmissive material allows for typically 4-18% transmission of light. The light transmitted through the partially transmitted transmissive material is phase-shifted, preferably by 180 degrees. Therefore, when the phase-shifted light interferes with light transmitted through the clear areas, destructive interference occurs. The shape-engineered contact openings are preferably star-shaped, cross-shaped, diamond-shaped, or generally of a shape including multiple corners or vertices, in order to produce generally round contact openings in a photosensitive film. The shape-engineered contact openings may be symmetrical or non-symmetrical. Each of the contact openings may include a regular or irregular shape.
Exemplary shapes of the shape-engineered contact openings are shown in FIGS. 1-4. The shapes illustrated in FIGS. 1-4 are intended to be exemplary, not restrictive of the shape-engineered contact openings of the present invention. Now turning to FIG. 1, a portion of APSM 2 includes an array of shape-engineered contact openings 10 forming a pattern thereon. The exemplary pattern may be designed to form contact openings at any of various levels of the processing sequence used to form a semiconductor device such as the contact level and the via level. The pattern includes a 2�2 array of shape-engineered contact openings 10. It should be understood that such array is exemplary only and contact openings 10 may be arranged in any of various other two dimensional arrays. According to another exemplary embodiment, contact openings 10 may be isolated features. Contact openings 10 are clear or light-transmissive regions 14 bounded by partially transmissive material 4. Partially transmissive material 4 may be 4 to 18% transmissive according to various exemplary embodiments, and it may phase shift transmitted light by approximately 180 degrees. An exemplary transmissive material may be CrF such as manufactured by Dai Nippon Printing Company having a transmission of 5.515% and a phase-shift of 187.37 degrees for 193 nanometer wavelength light. According to other exemplary embodiments, partially transmissive material 4 may be a thin layer of chromium oxynitride or Mo—Si—ON (molybdenum silicon-oxynitride) having a thickness chosen to shift the phase of light it transmits by about 180 degrees. Other conventional materials may also be used for partially transmissive material 4. It can be seen that the pattern in the APSM is defined by the intersection of transmissive regions 14 such as which form contact openings 10, and partially transmissive material 4.
Contact openings 10 are non-rectangular and non-circular. Each of contact openings 10 includes multiple corners or vertices 16, 18. Each contact opening 10 includes multiple outwardly-extending vertices 16. The configuration of contact openings 10 shown in FIG. 1 may be considered a four pointed star. According to another description, contact openings 10 may be considered an octagon having eight sides 6. The octagon is formed by a repeating sequence of adjacent angles 8 and 12. Angle 8 is an acute angle and angle 12 is an obtuse angle. Each star-shaped contact opening 10, therefore includes multiple outwardly-extending vertices 16 which form an acute angle. According to various exemplary embodiments, angles 8 may be 20 degrees, 45 degrees, 70 degrees, or other values. In a preferred embodiment, acute angles 8 of the four pointed star are 20 degrees.
The array of contact openings include pitch 24, and spacing 20. Each contact opening 10 include an average diameter. Exemplary diameters 22A, 22B and 22C represent diameters taken at various locations within contact opening 10. Contact opening 10 is symmetrical in the exemplary embodiment shown, but non-symmetrical contact openings may be used alternatively. Generally speaking, contact openings 10 of the present invention each include a number of vertices, including a number of outwardly extending vertices such as vertices 16. Outwardly extending vertices 16 form acute angles 8. As such, the contact openings of the present invention include parallelograms, trapeziums, stars with five or more points, and various other features defined by a number of straight segments. According to other exemplary embodiments such as will be shown in FIG. 2, the contact openings of the present invention may include curved and rounded features.
Still referring to FIG. 1, the dimensions of various features such as pitch 24, spacing 20, and the average diameter may be defined in terms of the projection system used in conjunction with the APSM to produce a pattern in a photosensitive film. Pitch 24 is the center-to-center distance between adjacent openings 10. Spacing 20 is the edge-to-edge distance between adjacent openings 10. For example, feature sizes may be defined in terms of the wavelength, λ, of light used and the numerical aperture-NA of the lens used in the projection aligner or stepper. In an exemplary embodiment in which APSM is a 1� photomask, pitch 24 may vary from 0.3 to 1.0 microns, and spacing 20 may be 200 nanometers or less. The average diameter will preferably be less than 500 nanometers, but may be greater according to other exemplary embodiments. In an exemplary embodiment the average diameter may be approximately 180 nanometers or less. Various other dimensions may be used alternatively. According to another definition, pitch 24 may generally be on the order of 2� the wavelength of the light used to form the patterns. According to another exemplary definition, each of spacing 20 and the average diameter may be less than or equal to 0.75 λ/NA and the corresponding area of contact opening 10 may be less than or equal to π[0.375 λ/NA]2. According to one exemplary embodiment, the average diameter of contact opening 10 may be 0.5 λ/NA, for a 1� mask, and the average diameter of the corresponding circular contact opening formed in a photosensitive film may range from 0.3-0.4 λ/NA.
FIG. 2 shows another exemplary embodiment of an array of contact openings 10 of the present invention. As described in conjunction with FIG. 1, the array of contact openings represents a portion of a pattern formed in APSM 2. Contact openings 10 shown in FIG. 2 may be considered star-shaped openings with rounded sides. Each of sides 20 are inwardly bowed in a central portion. Outwardly extending vertices include angles 18 which are each less than 90 degrees. Five, six, and other multiple pointed configurations may be used alternatively and, although contact openings 10 are shown to be symmetrical, non-symmetrical contact openings may be used alternatively.
The exemplary contact openings shown in each of FIGS. 3 and 4 are cross-shaped. Each of FIGS. 3 and 4 show a 2�2 array of substantially similar cross-shaped openings 10. FIGS. 3 and 4 differ, however, in the relative orientation of cross-shaped openings 10 within the array. The different relative configurations of the contact openings in the array as highlighted by FIGS. 3 and 4, may also be applied to other exemplary contact openings, such as the ones shown in FIGS. 1 and 2.
It should be emphasized at this point that the contact openings shown in the preceding figures are exemplary and not restrictive of the present invention. For example, other shapes such as diamond-shaped contact openings, and contact openings which are parallelograms, trapeziums, and other symmetrical and non-symmetrical figures are within the scope of the present invention. The shape of the contact openings may be defined by straight line segments only, or they may include curved segments. Furthermore, other non-rectangular and non-circular shapes which include rounded features, such as a diamond-shaped configuration having inwardly-bowed sides, may be used. Finally, the contact openings formed on an APSM for a particular mask level pattern, may include different shapes. According to one exemplary embodiment, an array of contact openings may be formed to include contact openings having different shapes.
FIG. 5 illustrates a perspective view of an exemplary APSM used in an optical projection system to form a corresponding pattern in a photosensitive film formed over substrate 30. APSM 2 includes an exemplary 2�2 array of contact openings 10A, 10B, 10C, and 10D. Optical source 50 emits light 52. According to an exemplary embodiment, optical source 50 may be an excimer laser. The excimer laser may be an ArF excimer laser which emits light having a wavelength of 193 nanometers, or it may be a KrF excimer laser emitting light having a wavelength of 248 nanometers. Other optical sources and light having various other wavelengths, may be used alternatively. Light 52 is a generally coherent light source having a degree of partial coherence defined by δ, which may be approximately 0.3 according to a preferred embodiment. Contact openings 10A-10D are each generally in the shape of a four pointed star. In the preferred embodiment, angle 8 may be a 20 degree angle.
Still referring to FIG. 5, photosensitive material 34 is formed over substrate 30 prior to the exposure step which is used to create the photo-pattern of exposed/unexposed areas in the photosensitive material. Photosensitive film 34 may be formed over substrate 30 using any of various suitable conventional methods. Photosensitive material 34 may be a commonly used positive photoresist material but other photosensitive materials may be used alternatively. In an exemplary embodiment, photosensitive film 34 may be a TArF-7a-6 photoresist manufactured by Tokyo Ohka Kogyo Company. Other photoresist films may be used according to other exemplary embodiments. In the exemplary embodiment, photosensitive film 34 is formed over dielectric layer 32, but may be formed over any of various films in which it is desired to form contact openings.
After substrate 30 is covered with photosensitive film 34 and optical source 50, APSM 2, and substrate 30 are placed in fixed position with respect to one another, optical source 50 emits light 52. In the preferred embodiment, light 52 is substantially coherent. Transmitted light 58 passes through clear areas 14 such as contact openings 10A-10D of APSM 2. Transmitted light 58 then passes through lens 54 which includes numerical aperture 56. Numerical aperture-NA 56 is a measure of the capability of lens 54 to collect diffracted light from APSM 2 and project it onto photosensitive film 34 of substrate 30. According to some exemplary embodiments, such ones incorporating a stepper, lens 54 may be configured to uniformly reduce the size of the mask pattern. For example, for a 10� mask, a corresponding photo-pattern formed in photosensitive material 34 will be one-tenth the size of the mask pattern. Exposing light 60 which passes through the transmissive areas of the pattern and through lens 54 impinges upon photosensitive material 34 to form a photo-pattern in photosensitive material 34 which corresponds to, but may be reduced in size with respect to, the mask pattern. As such, contact opening 40A in the photo-pattern corresponds to contact opening 10A in the mask pattern, contact opening 40B in the photo-pattern corresponds to contact opening 10B in the mask pattern, and so forth. An advantageous aspect of the present invention is that sidelobe formation is suppressed even at sub-wavelength geometries. In an exemplary embodiment, exposed contact openings 40A-D may include diameter 42 being no greater than 200 nanometers and the contact openings 40A-D may be spaced apart by a distance no greater than 200 nanometers. In an exemplary embodiment, diameter 42 may be 180 nanometers. Without the shape-engineered contact openings of the present invention, central area 44, disposed centrally in the 2�2 array, would be extremely susceptible to sidelobe formation. In contrast, the present invention is characterized by the tightly packed array of contact openings of the photo-pattern formed in the photosensitive film, being free of pattern defects.
After photosensitive material 34 is exposed, it may be developed using conventional techniques. After the pattern is developed, post-develop processing may take place and the photo-pattern may be transferred into dielectric film 32 by etching or other pattern transfer means.
Reticles and photomasks such as the APSM of the present invention are produced by photomask manufacturing tools using conventional manufacturing techniques. An exemplary photomask manufacturing tool may be a MEBES 4500 electron-beam tool. Various software or other computer readable media which incorporate the geometrics of the shape-engineered, non-rectangular contact openings, may be used to generate the mask pattern which includes the shape-engineered contact openings. Software or another computer readable media includes a set of instructions stored thereon. The instructions include instructions for generating the attenuated phase-shift photomask including the pattern, contact shapes, and geometries described above. The computer readable medium may interact directly with a computer which is in electronic communication with a photomask manufacturing tool, or the computer readable medium may be used to generate a pattern generation, PG, tape which is used to communicate with the photomask manufacturing tool. The attenuated phase-shift photomask of the present invention may be manufactured by a photomask manufacturing tool which is electrically connected to a computer or computers. A pattern generation tape or software or other computer readable medium includes a set of instructions for generating the APSM including the pattern as described above, and also instructions for directing the computer to communicate with the photomask manufacturing tool to generate the APSM. The instructions included in the computer readable medium are executed by at least one computer which, in turn, electronically instructs the photomask manufacturing tool to generate the APSM. According to an exemplary embodiment, the photomask manufacturing tool includes the computer as an integral component.
The preceding merely illustrates the principles of the invention. It will thus be appreciated that those skilled in the art will be able to devise various arrangements which, although not explicitly described or shown herein, embody the principles of the invention and are included within its spirit and scope. Furthermore, all examples and conditional language recited herein are principally intended expressly to be only for pedagogical purposes and to aid the reader in understanding the principles of the invention and the concepts contributed by the inventors to furthering the art, and are to be constructed as being without limitation to such specifically recited examples and conditions. For example, various other shapes may be used. Furthermore, the shape-engineered “contact openings” may be formed to various dimensions and may be used to form other features of semiconductor devices. The APSM may be used at various stages in the sequence of processing operations used to fabricate semiconductor devices. Moreover, the pattern formed in the APSM which includes the contact openings discussed herein, will further include various other features which together form the mask pattern.
All statements herein reciting principles, aspects and embodiments of the invention as well as specific examples thereof, are intended to encompass both structural and functional equivalents thereof. Additionally, it is intended that such equivalents include both currently known equivalents, such as equivalents developed in the future, i.e., any elements developed that perform the same function, regardless of structure. The scope of the present invention, therefore is not intended to be limited to the exemplary embodiments shown and described herein. Rather, the scope and spirit of the present invention is embodied by the appended claims.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5849440 *Jan 29, 1997Dec 15, 1998Motorola, Inc.Process for producing and inspecting a lithographic reticle and fabricating semiconductor devices using sameUS6194104 *Oct 12, 1999Feb 27, 2001Taiwan Semiconductor Manufacturing CompanyOptical proximity correction (OPC) method for improving lithography process windowUS6214497 *Jun 29, 1999Apr 10, 2001Micron Technology, Inc.Method to eliminate side lobe printing of attenuated phase shift masksUS6401236 *Apr 5, 1999Jun 4, 2002Micron Technology Inc.Method to eliminate side lobe printing of attenuated phase shift* Cited by examinerNon-Patent CitationsReference1Cobb, et al., "Large Area Phase-Shift Mask Design," Jan. 1994, pp. 348-360, SPIE vol. 2197, Proceedings of the SPIE.2Cui, et al., "Optimisation of Rim Phase Shift Masks for Contact Holes," Jul. 1994, pp. 147-150, Microelectronic Engineering 23 (1994).3Dao, et al., "New Approach of Rim Phase-Shifting Mask for High-Density Circuit Layout," Aug. 1994, pp. 3804-3808, J. Vac. Sci. Technology B-Microelectronics and Nanometer Structures.4Dao, et al., "New Approach of Rim Phase-Shifting Mask for High-Density Circuit Layout," Aug. 1994, pp. 3804-3808, J. Vac. Sci. Technology B—Microelectronics and Nanometer Structures.5Erd�lyi, et al., "Coherent Multiple Imaging by Means of Pupil Plane Filtering," Mar. 1999, pp. 762-771, SPIE vol. 3679.6Hur, et al., "Effect of Pattern Density for Contact Windows in an Attenuated Phase Shift Mask," Feb. 1995, pp. 278-289, SPIE vol. 2440.7Iwasaki, et al., "Attenuated Phase Shift Masks Reducing Side Lobe Effect in DRAM Peripheral Circuit Region," 1998, pp. 544-550, SPIE vol. 32368Iwasaki, et al., "High Transmittance Rim-Type Attenuated Phase Shift Masks for Sub-0.2 mum Hole Patterns," Apr. 1998, pp. 601-608, SPIE vol. 3412.9Iwasaki, et al., "High Transmittance Rim-Type Attenuated Phase Shift Masks for Sub-0.2 μm Hole Patterns," Apr. 1998, pp. 601-608, SPIE vol. 3412.10 *J.S.Peterson et al., "Assessment of a Hypothetical Roadmap that Extends Optical Lithography Through the 70nm Technology Node", SPIE,v3546,(1998),p. 288-303.*11Lin, "The Attenuated Phase-Shifting Mask," Jan. 1992, pp. 43-47, Solid State Technology.12Liu, et al, "Binary and Phase Shifting Mask Design for Optical Lithography," May, 1992, pp. 138-152, vol. 5, No. 2, IEEE Transactions on Semiconductor Manufacturing.13Liu, et al, "Optimal Binary Image Design for Optical Lithography," 1990, pp. 401-412, SPIE vol. 1264, Optical/Laser Microlithography III.14Ma, et al., "Preventing Sidelobe Printing in Applying Attenuated Phase Shift Reticles," 1998, pp. 543-552, SPIE vol. 3334.15Pau, et al., "Focus Drilling and Attenuated Phase Shift Mask for Subwavelength Contact Window Printing Using Positive and Negative Resists," Nov. 1999, pp. 2499-2506, J. Vac. Sci. Technology B Nov./Dec. 1999.16Saleh, "Image Synthesis: Discovery Instead of Recovery," 1987, pp. 463-498, Image Recovery: Theory and Application, Academic Press, Inc., Harcourt Brace Jovanovich, Publishers.17Schellenberg, et al., "Real and Imaginary Phase-Shifting Masks," Aug. 1993, pp. 237-265, SPIE vol. 1809.18Shin, et al., "Side-lobe Suppression in Half-Tone PSM with Optical Proximity Correction," 1995, pp. 291-299, SPIE vol. 2621.19Smith, et al., "Customizing Optical Illumination," 1999, p. 4, vol. 8, No. 4, Microlithography World.20Socha, et al., "Design of 200nm, 170nm, 140nm DUV Contact Sweeper High Transmission Attenuating Phase Shift Mask: Experimental Results Part 2," Mar. 1999, pp. 38-54, SPIE vol. 3679.21Socha, et al., "Resolution Enhancement with High Transmission Attenuating Phase Shift Masks," Sep. 1999, pp. 290-314, SPIE, vol. 3748.22 *W-A.Loong and co-workers, "Cross-shaped pattern on Chrome Mask for 0.5mum Contact Hole Fabrication", Microelectronic Engg.,v23,1994,p175-178.*23 *Y. Sohda and co-workers, "Modified Mask Mehtods for Pattern Accuracy Enhancement in Electron Beam Lithography", Jl.Vac.Sci and Tech.,B, v14(6), 1996, p3850-3854.** Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS6841313 *May 31, 2002Jan 11, 2005Taiwan Semiconductor Manufacturing Co., Ltd.Photomask with dies relating to different functionalitiesUS6859916 *Jan 31, 2002Feb 22, 2005Cadence Design Systems, Inc.Polygonal viasUS6895569Jan 31, 2002May 17, 2005Candence Design Systems, Inc.IC layout with non-quadrilateral Steiner pointsUS6905621 *Oct 10, 2002Jun 14, 2005Taiwan Semiconductor Manufacturing Co., Ltd.Method for preventing the etch transfer of sidelobes in contact hole patternsUS6976238Jan 31, 2002Dec 13, 2005Cadence Design Systems, Inc.Circular vias and interconnect-line endsUS7096445 *Jan 14, 2003Aug 22, 2006Cadence Design Systems, Inc.Non-orthogonal structures and space tiles for layout, placement, and routing of an integrated circuitUS7291425Sep 1, 2004Nov 6, 2007Micron Technology, Inc.Radiation patterning tools, and methods of forming radiation patterning toolsUS7310793Jan 31, 2002Dec 18, 2007Cadence Design Systems, Inc.Interconnect lines with non-rectilinear terminationsUS7496882 *Dec 22, 2004Feb 24, 2009Asml Netherlands B.V.Optimization to avoid sidelobe printingUS7516433Aug 21, 2006Apr 7, 2009Cadence Design Systems, Inc.Non-orthogonal structures and space tiles for layout, placement, and routing of an integrated circuitUS8907345 *Feb 1, 2014Dec 9, 2014Samsung Display Co., Ltd.Photomask and thin-film transistor fabricated using the photomaskUS20030180629 *Dec 3, 2002Sep 25, 2003Nanya Technology CorporationMasks and method for contact hole exposureUS20030224148 *May 31, 2002Dec 4, 2003Taiwan Semiconductor Manufacturing Co., Ltd.Photomask with dies relating to different functionalitiesUS20040069745 *Oct 10, 2002Apr 15, 2004Taiwan Semiconductor Manufacturing CompanyMethod for preventing the etch transfer of sidelobes in contact hole patternsUS20040150809 *Sep 5, 2003Aug 5, 2004Chih-Chin Chang[mask for fabricating a contact and contact process thereof]US20050026052 *Sep 1, 2004Feb 3, 2005Dulman H. DanielRadiation patterning tools, and methods of forming radiation patterning toolsUS20060134529 *Dec 22, 2004Jun 22, 2006Asml Netherlands B.V.Optimization to avoid sidelobe printingUS20070248898 *Apr 20, 2006Oct 25, 2007Atmel CorporationTargets for alignment of semiconductor masksUS20140147774 *Feb 1, 2014May 29, 2014Samsung Display Co., Ltd.Photomask and thin-film transistor fabricated using the photomask* Cited by examinerClassifications U.S. Classification430/5, 430/30, 430/322, 430/311, 430/22, 716/54, 716/55International ClassificationG03F1/36, G03F1/32Cooperative ClassificationG03F1/32, G03F1/36European ClassificationG03F1/32Legal EventsDateCodeEventDescriptionOct 1, 2001ASAssignmentOwner name: AGERE SYSTEMS, INC., PENNSYLVANIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BLATCHFORD, JAMES W., JR.;NALAMASU, OMKARAM;PAU, STANLEY;REEL/FRAME:012229/0129;SIGNING DATES FROM 20010717 TO 20010719Jul 12, 2007FPAYFee paymentYear of fee payment: 4Jul 15, 2011FPAYFee paymentYear of fee payment: 8May 8, 2014ASAssignmentOwner name: DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGFree format text: PATENT SECURITY AGREEMENT;ASSIGNORS:LSI CORPORATION;AGERE SYSTEMS LLC;REEL/FRAME:032856/0031Effective date: 20140506Apr 3, 2015ASAssignmentOwner name: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTDFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:AGERE SYSTEMS LLC;REEL/FRAME:035365/0634Effective date: 20140804Aug 28, 2015REMIMaintenance fee reminder mailedJan 20, 2016LAPSLapse for failure to pay maintenance feesFeb 2, 2016ASAssignmentOwner name: LSI CORPORATION, CALIFORNIAFree format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039Effective date: 20160201Owner name: AGERE SYSTEMS LLC, PENNSYLVANIAFree format text: TERMINATION AND RELEASE OF SECURITY INTEREST IN PATENT RIGHTS (RELEASES RF 032856-0031);ASSIGNOR:DEUTSCHE BANK AG NEW YORK BRANCH, AS COLLATERAL AGENT;REEL/FRAME:037684/0039Effective date: 20160201Mar 8, 2016FPExpired due to failure to pay maintenance feeEffective date: 20160120RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

value: This website is a search engine provided by Google. Handling over 3.5 billion searches per day, it has a 92% share of the global search engine market.


text:
Wishlist Plants
Los Angeles, California | 2550 Sales
Los Angeles, California 2550 Sales On Etsy since 2018
Silver Pothos- indoor house plants- live houseplants - air purifying plants- scindapsus pictus- philodendron Silver plant
Birds Nest Fern - Asplenium nidus- live indoor plant- house plant- air purifying plant
Announcement Hello, My name is Sandra Adis (Mejia). I am just another crazy plant lady living in Los Angeles. The Plant Chica came about with inspiration from my mom, she is the OG plant chica. My business is very small, so every transaction, sale, customer and plant is very important to me. Follow me on instagram for plant updates, tips, and giveaways. @theplantchica
Hello, My name is Sandra Adis (Mejia). I am just another crazy plant lady living in Los Angeles. The Plant Chica came about with inspiration from my mom, she is the OG plant chica. My business is very small, so every transaction, sale, customer and plant is very important to me. Follow me on instagram for plant updates, tips, and giveaways. @theplantchica
Pothos 5
peperomias 8
Air purifying plants 8
Calatheas 1
cacti/succs 2
Fittonias 2
Sansevieria cylindrica - cylindrical snake plant- african spear - live house plant- rare plant- air purifying plant
Large Satin pothos - scindapsus pictus - philodendron satin plant - live house plant- air purifying house plants
Large silver pothos - live house plant- indoor plant - air purifying plant- scindapsus pictus- philodendron Satin plant
Fiscus Elastica tineke (Rubber Plant)- live house plant- rubber tree
Marble Baby Rubber Plant. Peperomia Obtusifolia- live house plant- non toxic plants for pets
14-18" Rubber Plant- Burgundy- live house plant- rubber tree
Large Alocasia 'regal shields' - elephants ear - live house plant
Maiden Hair fern - Adiantum- live house plant - air purifying plant
Satin pothos - scindapsus pictus- philodendron Satin plant- live house plant- air purifying house plants
American Baby rubber plant. Lemon lime Peperomia Obtusifolia - live house plant - non toxic plant for dogs/cats
Dragon plant - Dracaena marginata - live house plant - air purifying plant
Moonshine Sansevieria ( snake plant) - live house plant - air purifying house plant
Gold hahnii snake plant - sansevieria trifasciata - live house plant - air purifying plants
6" Peperomia rana verde - rippled Chinese money plant- non toxic to cats/dogs
sansevieria trifasciata - viper's bowstring hemp - mother- in- laws tounge - snake plant - air purifying plants
quality 30 shipping 258 customer service 171
Rachel Stagner on Jan 20, 2019
The pothos is beautiful! It was much bigger than I expected. Shipping was quick and it was very carefully packaged; Sandra even told me when it was out for delivery so I could keep an eye out.
It’s been over a week and the lil guy is still doing great—already opening up a new leaf. I will definitely be ordering more in the future.
elizabethbalskus on Jan 20, 2019
beautiful plant, fast shipping, thank you!!
lxnore on Jan 20, 2019

type: global

value: This website is an American e-commerce company focused on handmade or vintage items and craft supplies.


text: 2 I have a small application that uses WCF to communicate with a webserver. This program is used by some 200 clients, and each client is sending in about 5-20 requests/min.

value: This website is a question and answer website for professional and enthusiast programmers. It is the flagship site of the Stack Exchange Network, created in 2008 by Jeff Atwood and Joel Spolsky.


text:
''[[United States of America|United States]]  [[Image:Gotoarrow.png]][[United States Military Records|U.S. Military]][[Image:Gotoarrow.png]][[Pennsylvania|Pennsylvania]] [[Image:Gotoarrow.png]][[Pennsylvania Military Records|Pennsylvania Military]] [[Image:Gotoarrow.png]][[Pennsylvania in the Civil War|Pennsylvania in the Civil War]] [[Image:Gotoarrow.png]]  Pennsylvania Civil War Union Colored Troops'' ''[[United States of America|United States]]  [[Image:Gotoarrow.png]][[United States Military Records|U.S. Military]][[Image:Gotoarrow.png]][[Pennsylvania|Pennsylvania]] [[Image:Gotoarrow.png]][[Pennsylvania Military Records|Pennsylvania Military]] [[Image:Gotoarrow.png]][[Pennsylvania in the Civil War|Pennsylvania in the Civil War]] [[Image:Gotoarrow.png]]  Pennsylvania Civil War Union Colored Troops'' −
The information in this list of Pennsylvania Military Units comes from the [http://www.itd.nps.gov/cwss/ Civil War Soldiers and Sailors] web site (CWSS). That web site can also be searched by the name of a soldier. +Pennsylvania enlisted 8,612 men of color.<ref>United States. War Department, ''The War of the Rebellion: a Compilation of the Official Records of the Union and Confederate Armies'', (Washington, District of Columbia: Govt. Print. Office, 1880-1901), Series 3, Volume 4, page 1270. {{FHL|31516|item|disp=FHL book 973 M29u ser.3 v. 3, FHL film 845422}}.</ref>
 −
+The information in this list of Pennsylvania Military Units comes from the [http://www.itd.nps.gov/cwss/ Civil War Soldiers and Sailors] web site (CWSS). That web site can also be searched by the name of a soldier.
 *[[Southard's Company, United States Colored Infantry (Pennsylvania)|Southard's Company, United States Colored Infantry (Pennsylvania)]]
"Compendium of the War of the Rebellion" by Frederick H. Dyer contains no history for this unit.
 *[[Southard's Company, United States Colored Infantry (Pennsylvania)|Southard's Company, United States Colored Infantry (Pennsylvania)]]
"Compendium of the War of the Rebellion" by Frederick H. Dyer contains no history for this unit.

−*[[3rd_Regiment,_United_States_Colored_Infantry|3rd Regiment, U.S.C.T]].
+ −*[[6th_Regiment,_United_States_Colored_Infantry|6th Regiment, U.S.C.T]].
+*[[3rd Regiment, United States Colored Infantry|3rd Regiment, U.S.C.T]].
 Organized at Camp William Penn, near Philadelphia, Pennsylvania, August 3-10, 1863.
Mustered out October 31, 1865.

−*[[8th Regiment, United States Colored Infantry|8th Regiment, U.S.C.T.]]
+ −*[[24th_Regiment,_United_States_Colored_Infantry|24th Regiment, U.S.C.T.]]
+*[[6th Regiment, United States Colored Infantry|6th Regiment, U.S.C.T]].
Organized at Camp William Penn near Philadelphia, Pennsylvania, July 28, to September 12, 1863.
Surrender of Johnston and his army.
Duty in the Dept. of North Carolina until September.
Mustered out September 20, 1865.

−*[[25th_Regiment,_United_States_Colored_Infantry|25th Regiment, U.S.C.T.]]
+ −*[[32nd_Regiment,_United_States_Colored_Infantry|32nd Regiment, U.S.C.T.]]
+*[[8th Regiment, United States Colored Infantry|8th Regiment, U.S.C.T.]]
 Organized at Camp William Penn, Philadelphia, Pennsylvania, September 22 to December 4, 1863.
Left Philadelphia for Hilton Head, South Carolina, January 16, 1864.
Designation changed to [[80th Regiment, United States Colored Infantry|80th U.S. Colored Troops]], April 4, 1864.
Mustered out November 10, 1865.
Discharged December 12, 1865.

−*[[41st_Regiment,_United_States_Colored_Infantry|41st Regiment, U.S.C.T]].
+ −*[[43rd_Regiment,_United_States_Colored_Infantry|43rd Regiment, U.S.C.T.]]
+*[[24th Regiment, United States Colored Infantry|24th Regiment, U.S.C.T.]]
Organized at Camp William Penn, and Philadelphia, Pennsylvania, January 30, to March 30, 1865.
Mustered out October 1, 1865.

−*[[45th_Regiment,_United_States_Colored_Infantry|45th Regiment, U.S.C.T.]]
+ −*[[127th_Regiment,_United_States_Colored_Infantry|127th Regiment, U.S.C.T.]]
+*[[25th Regiment, United States Colored Infantry|25th Regiment, U.S.C.T.]]
Organized at Philadelphia, Pennsylvania, January 13, to February 12,1864.
Designation changed to [[93rd Regiment, United States Colored Infantry|93rd U.S. Colored Troops]]. April 4,1864.
Mustered out December 6, 1865.

value: This website is a nonprofit organization and website offering genealogical records, education, and software. It is operated by The Church of Jesus Christ of Latter-day Saints , and is closely connected with the church's Family History Department.


text:
4 bedroom house for sale in Compton Place, Erith, Kent, DA8
www.rightmove.co.uk/property/79515356
Compton Place, Erith, Kent
Style: 4 Bedroom End of Terrace
Lounge and Large Kitchen / Diner
Ground Floor Shower Room / WC and First Floor Bathroom
Area: 941 SQ. FT
Close To Bus and Train Transport Links
Located in a perfect position for local amenities is this four bedroom end of terrace family home. The property is within walking distance to Erith High street offering an array of shops and restaurants this would suit those who need to be within easy access to local shops and transport links to and from work. The train station is close by for those who need to commute on day to day basis.
As you walk into the home you will find a beautiful large lounge, which is light and airy. The kitchen diner is very spacious with ample storage cupboards and preparation area. Also has a enough room for a good size family table and chairs to relax and enjoy your meals. Downstairs has a newly refurbished shower room / WC.
On the first floor you will find three double bedrooms with 1 single bedroom and a newly refurbished family bathroom.
Access to private rear low maintenance garden is via the patio doors in the kitchen diner via the patio doors, where you will find a patio and grass area.
Parking is in a communal parking area for residents only, and this is not directly outside the home. There is also ample off street parking.
Lounge - 4.47m x 3.56m (14'8 x 11'8) -
Kitchen / Diner - 5.38m x 3.48m (17'8 x 11'5) -
Shower Room / Wc - 1.75m x 1.45m (5'9 x 4'9) -
Master - 3.51m x 3.20m (11'6 x 10'6) -
Bedroom 2 - 3.51m x 2.44m[2.44m (11'6 x 8'[8) -
Bedroom 3 - 3.51m x 2.08m (11'6 x 6'10) -
Bedroom 4 - 2.16m x 1.75m (7'1 x 5'9) -
Family Bathroom - 2.08m x 1.65m (6'10 x 5'5) -
To view this media, please visit the on-line version of this page at www.rightmove.co.uk/property-for-sale/property-79515356.html?premiumA=true
Disclaimer - Property reference 28556976. The information displayed about this property comprises a property advertisement. Rightmove.co.uk makes no warranty as to the accuracy or completeness of the advertisement or any linked or associated information, and Rightmove has no control over the content. This property advertisement does not constitute property particulars. The information is provided and maintained by Anthony Martin Estate Agents, Barnehurst. Please contact the selling agent or developer directly to obtain any information which may be available under the terms of The Energy Performance of Buildings (Certificates and Inspections) (England and Wales) Regulations 2007 or the Home Report if in relation to a residential property in Scotland.
29 May 2018 71 Compton Place, DA8 £340,000
02 Jun 2017 11 Compton Place, DA8 £275,000
23 Jan 2015 5 Compton Place, DA8 £190,000

value: This website is a UK-based company that runs rightmove.co.uk, the UK's largest online real estate portal and property website. It is listed on the London Stock Exchange and is a constituent of the FTSE 100 Index.


text:
Roland Kirk | CD | Kirk's work (1961, with Jack McDuff) 0090204871216 for sale
Roland Kirk | CD | Kirk's work (1961, with Jack McDuff)
Est. delivery Thu, 31 Oct - Fri, 15 Nov
fun-recFeedback score (65257)
Roland Kirk with Jack McDuff/Kirk's Work/1990 CD Album
RAHSAAN ROLAND KIRK & AL HIBBLER.A MEETING OF THE TIMES.U.S.ORIG JAZZ LP.EX/EX
Roland Kirk With Jack McDuff - Kirk's Work (RVG Remaster)
Roland Kirk With Jack McDuff - Kirk's Work - CD (Prestige OJCCD-459-2 U.S.A.)
Roland Kirk With Jack McDuff – Kirk's Work. 1990 Original Jazz Classics CD
RAHSAAN ROLAND KIRK ~ S/T ~ 1982 JAZZ VINYL LP ~ FRENCH RELEASE ~ PLAYS WELL
Roland Kirk : Pre-rahsaan CD (2007) Value Guaranteed from eBay’s biggest seller!
0090204871216
352775982091
03 Nov, 2019, 00:00 GMT
"Kirk's work (1961, with Jack McDuff). Roland Kirk. The Largest Collection in Germany. Second Hand and New. Here you may buy music at very low prices."
Roland Kaiser Vinyl Records
Jazz Knitting Factory Works 2000 Music CDs
Knitting Factory Works 2000 Music CDs
Album Rock CDs Roland Kaiser
Album CDs Roland Kaiser in German
Music CDs Roland Kaiser in German

value: This website is an American multinational e-commerce corporation based in San Jose, California, that facilitates consumer-to-consumer and business-to-consumer sales through its website.


text: Compute- app-11031821-41-176967166, DC- prod-dal3, ENV- prod-a, Ver- 52.0.0, SHA- def6a509fddd8ddb1b4a25836de00593f17abd2d, Log- 7b338246-889e1-159c000c810000 Site Information Be the first to save! Email Address Sign up Privacy Policy Stay connected Mobile apps Help Feedback MoneyCenter Privacy & Security CA Privacy Rights Terms of Use Walmart services See All Services Walmart MoneyCenter Walmart Credit Card Product Care Plans Walmart Pay Get to know us About Walmart.com Corporate Suppliers Marketplace Careers @WalmartLabs Walmart.com Terms of Use About Our Ads Affiliate Program CA Privacy Rights Privacy & Security Customer service Returns Policy Product Recalls Int’l Customers Tax Exempt Program Contact Us Feedback Store Pickup In the spotlight Expand Valentine's Day Jewelry Perfume Valentine's Decor Engagement Rings Lingerie Valentine's Candy Teddy Bears Valentine's Clothing Expand Electronic iPads iPhones Video Games Laptops Tablets 4K TVs Digital Cameras Prepaid Phones Xbox One PS4 Expand Home Mattresses Air Mattresses Keurig Microwaves Heaters Electric Fireplaces Blenders Kitchen Appliances Hunting Gear Game Time Expand Cold Weather Shop Women's Jackets Men's Jackets Women's Boots Men's Boots Scarves Hats Shoes Pajamas Hoodies Hunting Clothes Expand Fitness Treadmills Yoga Pants Fitbit Ellipticals Protein Shakes Scales Supplements Exercise Machines Expand International Sites Argentina Brazil Chile China Japan Mexico United Kingdom Popular Products © Walmart Stores, Inc. To ensure we’re able to help you as best we can, please include your reference number: Ref:

value: This website is an American multinational retail corporation that operates a chain of hypermarkets , discount department stores, and grocery stores from the United States, headquartered in Bentonville, Arkansas.


text:
Patent US7164804 - Method and apparatus for eliminating flicker by quantizing values based on ... - Google Patents
A method and apparatus for eliminating flicker by quantizing values based on previous quantization is described. In one embodiment, the method comprises encoding a first coefficient value in a first frame of a motion sequence and subsequently setting a second coefficient in a second frame of the motion...http://www.google.com/patents/US7164804?utm_source=gb-gplus-sharePatent US7164804 - Method and apparatus for eliminating flicker by quantizing values based on previous quantization
Publication number US7164804 B2
Application number US 11/081,281
Also published as EP1233624A1, US6898323, US6898325, US6904178, US6925209, US6973217, US6983075, US7031537, US7062103, US7072520, US7079690, US7095900, US7477792, US20020168112, US20030206656, US20030206661, US20030210826, US20030210827, US20030215146, US20030215150, US20030219166, US20040028284, US20040057628, US20040120585, US20050041878, US20050163388
Publication number 081281, 11081281, US 7164804 B2, US 7164804B2, US-B2-7164804, US7164804 B2, US7164804B2
Patent Citations (104), Non-Patent Citations (65), Referenced by (9), Classifications (91), Legal Events (2)
U.S. Classification 382/248, 375/E07.07, 382/236, 375/E07.056, 375/E07.075, 375/E07.071, 375/E07.198, 375/E07.045, 375/E07.065
International Classification G11B27/036, H04N1/41, G06K9/38, H04N7/30, H04N7/50, H03M7/40, G06F17/14, H03M7/30, G06T9/00, H04N7/26, G06K9/36
Cooperative Classification H04N19/129, H04N19/154, H04N19/86, H04N19/162, H04N19/63, H04N19/34, H04N19/593, H04N19/40, H04N19/117, H04N19/46, H04N19/619, H04N19/124, H04N19/61, H04N19/17, H04N19/10, H04N19/172, H04N19/152, H04N19/645, H04N19/85, H04N19/45, H04N19/64, H04N19/426, H04N19/647, H04N19/635, H04N19/36, H04N19/42, H04N19/115, H04N19/176, H04N19/70, H04N19/423, H04N19/147, H04N19/146, H04N19/126, G11B27/036
European Classification H04N7/26L2, H04N7/26H50, H04N7/26E, H04N7/26H50E4, H04N7/26P, H04N7/26A6D, H04N7/26P4, H04N7/26H50F, H04N7/26H30E5A, H04N7/26Y, H04N7/26H30C, H04N7/26A4F, H04N7/26A6Q, H04N7/26A8R, H04N7/26H30H6, H04N7/26D2, H04N7/26A4Q2, H04N7/26H50M, H04N7/26A10S, H04N7/26H30E4, H04N7/26A8P, G11B27/036, H04N7/26A6E2, H04N7/50, H04N7/26H30M, H04N19/00C4, H04N7/26H30E5, H04N7/26A8B, H04N7/26H30H, H04N7/26L2D, H04N7/26H30C1S, H04N7/26H30C3V, H04N7/26H30H1, H04N7/26H30D2, H04N7/26H30H2, H04N7/26H30Q, H04N7/26T


text:
Los dinosaurios (Book, 1991) [WorldCat.org]
I thought you might be interested in this item at http://www.worldcat.org/oclc/33471982 Title: Los dinosaurios Author: David Norman; Angela C Milner; Colin Keates Publisher: Madrid : Santillana, 1991. ISBN/ISSN: 8437237203 9788437237206 OCLC:33471982
David Norman; Angela C Milner; Colin Keates
Madrid : Santillana, 1991.
Text and photographs explore the world of the dinosaurs, focusing on such aspects as their teeth, feet, eggs, and fossils. Some dinosaurs were huge, some were small, some were dangerous, some were safe inhibitors of the earth. After 150 million years they mysteriously disappeared & their fossils are the testimony of this fabulous historical era. You students will love looking at the pictures & reading the interesting, though not complicated, accompanying text & discover all the fascinating facts gathered on the Dinosaurs. An in-depth presentation of nature, history, science, and technology through a magnificent collection of photographs and illustrations. Descriptive, easy-to-read explanations make this collection an asset for any school. Read more...
Find more information about: David Norman Angela C Milner Colin Keates
8437237203 9788437237206
33471982
Translation of: Dinosaur.
por David Norman y Angela Milner ; [traducido por María Barberán].
Text and photographs explore the world of the dinosaurs, focusing on such aspects as their teeth, feet, eggs, and fossils. Some dinosaurs were huge, some were small, some were dangerous, some were safe inhibitors of the earth. After 150 million years they mysteriously disappeared & their fossils are the testimony of this fabulous historical era. You students will love looking at the pictures & reading the interesting, though not complicated, accompanying text & discover all the fascinating facts gathered on the Dinosaurs. An in-depth presentation of nature, history, science, and technology through a magnificent collection of photographs and illustrations. Descriptive, easy-to-read explanations make this collection an asset for any school.
Add tags for "Los dinosaurios". Be the first.
Paleontología.
Fósil.
<http://www.worldcat.org/oclc/33471982> # Los dinosaurios
bgn:translationOfWork <http://www.worldcat.org/title/-/oclc/33471982#CreativeWork/unidentifiedOriginalWork> ; # Dinosaur.
library:oclcnum "33471982" ;
library:placeOfPublication <http://experiment.worldcat.org/entity/work/data/4663487448#Place/madrid> ; # Madrid
schema:about <http://experiment.worldcat.org/entity/work/data/4663487448#Topic/paleontologia> ; # Paleontología
schema:about <http://experiment.worldcat.org/entity/work/data/4663487448#Topic/dinosaurs> ; # Dinosaurs
schema:about <http://experiment.worldcat.org/entity/work/data/4663487448#Topic/dinosaurios> ; # Dinosaurios
schema:about <http://experiment.worldcat.org/entity/work/data/4663487448#Topic/fosil> ; # Fósil
schema:audience <http://www.worldcat.org/title/-/oclc/33471982#Audience> ;
schema:description "Explore la vida de los prehistoricos amos de la tierra y descubre como los antiguos fosiles y huellas revelan un mundo impresionante." ;
schema:description "Text and photographs explore the world of the dinosaurs, focusing on such aspects as their teeth, feet, eggs, and fossils. Some dinosaurs were huge, some were small, some were dangerous, some were safe inhibitors of the earth. After 150 million years they mysteriously disappeared & their fossils are the testimony of this fabulous historical era. You students will love looking at the pictures & reading the interesting, though not complicated, accompanying text & discover all the fascinating facts gathered on the Dinosaurs. An in-depth presentation of nature, history, science, and technology through a magnificent collection of photographs and illustrations. Descriptive, easy-to-read explanations make this collection an asset for any school." ;
schema:exampleOfWork <http://worldcat.org/entity/work/id/4663487448> ; # Dinosaur.
schema:isPartOf <http://experiment.worldcat.org/entity/work/data/4663487448#Series/biblioteca_visual_altea> ; # Biblioteca visual Altea
schema:name "Los dinosaurios" ;
schema:productID "33471982" ;
schema:publication <http://www.worldcat.org/title/-/oclc/33471982#PublicationEvent/madrid_santillana_1991> ;
schema:publisher <http://experiment.worldcat.org/entity/work/data/4663487448#Agent/santillana> ; # Santillana
schema:workExample <http://worldcat.org/isbn/9788437237206> ;
wdrs:describedby <http://www.worldcat.org/title/-/oclc/33471982> ;
<http://experiment.worldcat.org/entity/work/data/4663487448#Agent/santillana> # Santillana
<http://experiment.worldcat.org/entity/work/data/4663487448#Place/madrid> # Madrid
<http://experiment.worldcat.org/entity/work/data/4663487448#Series/biblioteca_visual_altea> # Biblioteca visual Altea
schema:hasPart <http://www.worldcat.org/oclc/33471982> ; # Los dinosaurios
<http://experiment.worldcat.org/entity/work/data/4663487448#Topic/dinosaurios> # Dinosaurios
<http://experiment.worldcat.org/entity/work/data/4663487448#Topic/dinosaurs> # Dinosaurs
<http://experiment.worldcat.org/entity/work/data/4663487448#Topic/fosil> # Fósil
schema:name "Fósil" ;
<http://experiment.worldcat.org/entity/work/data/4663487448#Topic/paleontologia> # Paleontología
<http://worldcat.org/entity/work/id/4663487448> # Dinosaur.
<http://worldcat.org/isbn/9788437237206>
schema:isbn "8437237203" ;
schema:isbn "9788437237206" ;
<http://www.worldcat.org/title/-/oclc/33471982>
schema:about <http://www.worldcat.org/oclc/33471982> ; # Los dinosaurios
<http://www.worldcat.org/title/-/oclc/33471982#Audience>
<http://www.worldcat.org/title/-/oclc/33471982#CreativeWork/unidentifiedOriginalWork> # Dinosaur.
<http://www.worldcat.org/title/-/oclc/33471982#PublicationEvent/madrid_santillana_1991>
schema:location <http://experiment.worldcat.org/entity/work/data/4663487448#Place/madrid> ; # Madrid
schema:organizer <http://experiment.worldcat.org/entity/work/data/4663487448#Agent/santillana> ; # Santillana
Los dinosaurios/David Norman; Angela C Milner; Colin Keates; Madrid : Santillana, 1991.

value: This website is a union catalog that itemizes the collections of 15,637 libraries in 107 countries that participate in the OCLC global cooperative. It is operated by OCLC, Inc.


text:
HTML5 &quot;Escape the Room&quot; game | CSS | Game Design | HTML5 | Javascript
HTML5 "Escape the Room" game
HTML5 &quot;Escape the Room&quot; game
I am looking to create an "Escape the Room" type game. Think: [url removed, login to view] but a bit more graphical and html5 so it works on an ipad. We have a designer, director, and creative team to create the game concept and artwork, however are looking for a front end developer / programer to put the whole thing together.
Skills: CSS, Game Design, HTML5, Javascript
See more: html5 room escape, escape room html5, escape room game html5, programer games, programer game, javascript programer, JavaScript game developer, i am programer, html programer, html graphical designer, html5 programer, html5 games developer, graphical room design, game front end, game for programer, developer html5 game, room escape, javascript html5, javascript game , html5 game, front end developer designer, escape, escape the room, escape games, creative director
Project ID: #2645028
15 freelancers are bidding on average $4383 for this job
Looks fun man I would love to do this.
Experienced Javascript coder familiar with HTML5 designs for web based Apps. Please see my private message for detailed bid information and samples for your "Crimson Room" like project. Thank You.
Hi! Game development is always very interesting so we a happy to do it. We can do this game for you!
We are interested in your project as we have completed 25+ games projects in last 5 years.
Done right, On Time, and To Your Specifications: We have a track record of doing the impossible. Get great customer service and incredibly talented engineers and developers!
Consider: *Years of experience
I understand your project, i have a good team with i work and i can resolve your project very fast ! I just need more infos and we will be ok !
$3700 USD in 34 days
wilkesreidsl
I've been working with the HTML5 Canvas for a while and have been refamiliarizing myself with it lately, and I'd love the chance to help you guys out with your project. Let me know if your interested and what you need
I would like to assign game developers for this project, please check PMb for previous projects we have done and decide the best team accordingly. Thanks

value: This website is an Australian freelance marketplace website, which allows potential employers to post jobs that freelancers can then bid to complete. Founded in 2009, its headquarters is located in Sydney, Australia, though it also has offices in Vancouver, London, Buenos Aires, Manila, and Jakarta.


text:
14k White Gold 2ct TDW Contemporary Diamond Engagement Ring (H, I1) Today $2219.99 (4) Annello 14k Gold 1 5/8ct TDW Princess-cut Halo Diamond Bridal Set (H-I, I1-I2) Today $2180.99 14k White Gold 2ct TDW Certified Multi Stone Princess Cut Diamond Bridal Set (G-H, I1) Today $1952.99 Compare $2179.99 Save 10% Miadora 14k White Gold 1ct TDW Diamond Bridal Ring Set (G-H, I1-I2) Sale $1136.79 Was $1420.99(20) 14k White Gold 1ct TDW Princess Diamond Bridal Ring Set (G-H, I1) Today $1089.99 Compare $1149.99 Save 5% (1) Beverly Hills Charm 14k White Gold 1 1/2ct TDW Certified Diamond Engagement Ring Today $1404.99 (2) Miadora 10k White Gold 1/3ct TDW Black Diamond Bridal Ring Set Sale $281.99 Was $375.99 Annello 14k Gold 3/4ct TDW Diamond Bridal Ring Set (G-H, I1) Sale $1181.49 Was $1389.99(11) Auriya 14k Gold 1 1/2ct TDW Certified Diamond Bridal Ring Set (H-I, SI1-SI2) Today $2991.99 14k Two-tone Gold 1ct TDW Princess-cut Diamond Ring (G-H, I2-I3) Today $1061.99 Annello 14k White Gold 1ct TDW Diamond Bridal Ring Set (H-I, I1-I2) Sale $1461.99 Was $1719.99 Miadora 14k Gold 2ct TDW Diamond Princess Cut Bridal Ring Set (H-I, I2-I3) Sale $2082.49 Was $2449.99(13) Miadora 14k White Gold 1ct TDW Diamond Bridal Ring Set (H-I, I1-I2) Today $1958.99 (2) Miadora 14k White Gold 1 1/5ct TDW Bridal Ring Set (G-H, I1-I2) Sale $1567.19 Was $1958.99 Miadora Platinum 1ct TDW Diamond 3-stone Engagement Ring (G-H, I1-I2) Sale $2777.59 Was $3471.99 Miadora 10k White Gold 1/6ct TDW Diamond 5-Stone Ring (H-I, I2-I3) Sale $247.34 Was $290.99 Miadora 14k Gold 1/2ct TDW Diamond Bridal Ring Set Today $851.99 (3) Annello 14k White Gold 1 2/5ct TDW Princess Shape Diamond Halo Ring (H-I, I1-I2) Today $1869.99 Next Sponsored Links What's This?
http://www.overstock.com/Jewelry-Watches/Miadora-14k-White-Gold-1-1-2ct-TDW-Diamond-Bridal-Ring-Set-G-H-I1-I2/7031245/product.html?recommendation_id=3835b2ab-f60d-4b12-877b-6a3f01c96691&rcmndsrc=2&atcError=1

value: This website is an American internet retailer selling primarily furniture headquartered in Midvale, Utah, near Salt Lake City.


text:
Jeanette Kwakye calls for Team GB to lead the way on anti-doping | Sport | The Guardian
Jeanette Kwakye calls for Team GB to lead the way on anti-doping
• Sprinter says social drugs should be treated no differently
• 'I'm quite clear on this: drugs is drugs,' Kwakye said
Jeanette Kwakye said Team GB should lead the way in anti-doping ahead of the 2012 Games. Photograph: David Parry/PA Wire
The British sprinter Jeanette Kwakye does not believe athletics chiefs should go easy on competitors caught using recreational drugs. Kwakye, speaking at the celebrations to mark one year until the 2012 London Olympic Games, rejected suggestions by a senior anti-doping official that the authorities should be more flexible over recreational drugs.
Michael Stow, the head of science and medicine at UK Anti-Doping, said he does not believe that substances such as cocaine and ecstasy should be treated in the same way as performance-enhancing drugs. "These stimulants should absolutely still be prohibited but we'd like more flexibility in the sanction we give," Stowe said in a document seen by the Times.
"If we think someone's been taking a substance to cheat we would still give two years, but more often it's a case of them being used in a social setting. We want the prohibited list to be an evidence-based document, not a question of moral and ethics," Stow added.
Kwakye, a 100m finalist at the Beijing Olympics in 2008, holds a different opinion. "I'm quite clear on this: drugs is drugs," she told BBC 5 Live. "Cocaine and ecstasy and everything else, if you are taking that as a professional athlete then you are obviously not serious about what you want to do.
"Furthermore, it goes against the spirit of the sport. What kind of message are you sending out to any kids that probably want to get involved? We need to make sure Team GB and Great Britain lead the way when it comes to anti-doping.
"I'd love to think that all the girls I line up with and come up against are clean, that we're all doing it properly, none of us are cheating. Unfortunately there will be some athletes who think they can beat the system, or beat the testers. If they do get away with it that's a massive shame."
Liz Nicholl, the chief executive of UK Sport, said: "Our position is very clear. All the athletes in receipt of public funding, representing Team GB and Paralympics GB at the Games, are role models for their peer group and future athletes."
Charles van Commenee stands firm in row with Phillips Idowu
Britain's athletics head coach Charles Van Commenee has denied he needs to apologise to the triple jumper Phillips Idowu
Alberto Contador's doping case delayed until November

value: This website is a British news and media website owned by the Guardian Media Group. It contains nearly all of the content of the newspapers The Guardian and The Observer, as well as a substantial body of web-only work produced by its own staff, including a rolling news service.


text:
Jewels Nativity
50-PC LENOX CHINA - ETERNAL - 10 PLACE SETTINGS Plates Cups Saucers
10 Saucers. For sale is a collection ofLENOX CHINA in the ETERNAL pattern. This sale includes 10 Dinner Plates, 10-5/8". 10 Salad Plates, 8-1/8". 10 Bread Plates, 6-1/2".
Set Of 4 Lenox China "AUTUMN" 8 1/4" Rimmed Soup Bowls
Lenox China. "AUTUMN" Pattern.
Lenox China AUTUMN Rim Soup Bowls - Gold Backstamp - Set of 8 - Perfect!
Lenox China's Autumn pattern has been a favorite pattern since the mid-1960's. The bone china pieces have an elaborate raised design on the rims, with fruit interspersed among blue scrolls. The fruit-...
20pc SET - Oxford / Lenox China WHITE ECHO Service for Four
FLATWARE 1847 Rogers Bros. CHINA & DINNERWARE. STEMWARE & GLASSWARE. Platinum trim. STORAGE & CARE. Set includes.
Lenox china MONTCLAIR Cup & Saucer Set of 4
These items are in very good preowned condition with no chips or cracks. Please see photos and feel free to ask questions. Thank you!
Lenox China. Candle Stand Holder. With Gold Trim. Made In USA. We try to describe each item to the best of our knowledge.
Lenox China Holiday Dimension (20) PIECES (4) Five Piece Place Settings EXCL!
The borders feature a festive green holly / berry design which shows rich color and fine detail. Auctiva's FREE Counter.
LENOX china HOLIDAY PLATINUM pattern SALAD PLATE 8-1/4"
• Platinum Trim. CHINA FINDERS. in great condition with minimal use.
Pair of Lenox china "Holiday Dimension" demitasse cups and saucers
Lenox Fine China ETERNAL 30 Piece Place Setting for 6
6 sets of 5 pieces.
8-PC LENOX CHINA - ETERNAL - COUP SOUP BOWLS Bowl
8 Coup Soup Bowls, 7-1/2". For sale is a collection ofLENOX CHINA in the ETERNAL pattern. This sale includes.
8-PC LENOX CHINA - ETERNAL - FRUIT DESERT BOWLS Bowl 5-3/8"
One has a large chip under the rim. For sale is a collection ofLENOX CHINA in the ETERNAL pattern. This sale includes.
Lenox Fine China ETERNAL 35 Piece Place Setting for 7
Lenox China Autumn Oval Serving platter
This platter is an immaculate piece in the autumn collection that is a must have for any Lenox fan. The wonderful condition and versatile size makes this a great addition to any collection!
Lenox China AUTUMN (4) Dinner Plates 10.5" - Made in USA
Up for your consideration are four lovely dinner plates from Lenox. Done in the Autumn pattern, all are in good pre-owned condition. I try to describe each item to the best of my ability.
Set of 2 Lenox China "AUTUMN" Octagonal Serving Bowl
LENOX Fine China Oval AUTUMN Vegetable Bowl w/ Gold Backstamp Perfect Cond.
Beautiful Lenox vegetable bowl. 91/2" x 71/2" Perfect condition.
Your most special occasions call for special fine china to adorn the table, and Lenox china is among the finest of them all. The venerable company has its roots in 1889, founded by Walter Scott Lenox as an art studio rather than a factory. This artistic aura continues in the fine Lenox designs produced today. Over the Lenox Company's 125-year history, it has produced the official tableware for six presidents, and makes the dinnerware for the vice-presidential residence and more than 300 U.S. embassies overseas. Several governors' mansions also spread Lenox on the table at mealtime. You can join this august company by selecting Lenox china settings for the holiday dinners, banquets, and dinner parties in your home, showing your family and guests they are every bit as important as foreign dignitaries. In addition to the numerous beautiful classic designs available from Lenox, you can choose patterns made specifically for seasons and holidays, such as Lenox autumn china themes for your Thanksgiving meal. Lenox Christmas china includes place settings, of course, but also table ware such as Christmas tree-shaped candy dishes and platters, and cookie jars in delightful forms like gingerbread houses and snowmen. The trusted sellers on eBay can help you amass all the Lenox china you need.


text:
cocoa touch - How to install AdHoc IPA file to iPhone without backing up apps of iPhone? - Stack Overflow
3 I want to install an AdHoc IPA file to an iPhone, but I don't want to back up the apps of iPhone into iTunes, because the iPhone is not mine, and there are too many apps in it. Is that possible? iphone cocoa-touch ipad itunes adhoc share|improve this question edited Feb 21 '11 at 9:34
1,68952146
asked Feb 21 '11 at 7:17
You could also use Xcode (at least Xcode 4, haven't tried it with earlier versions):
Open the Organizer and select 'Applications' under your device in the Devices tab. Now use the Add button to add your ipa to the device.
thrasch
+1 Thanks! This was helpful for me :)
This web app may be what you need: http://testflightapp.com/
share|improve this answer answered Feb 21 '11 at 7:24
Take a look at Hockey, from the project description:
The server component is required for all scenarios. But it also can work standalone without the client library. It provides a web interface which beta testers can use to install the latest AdHoc provisioning profile and also the latest beta version via Safari right from the device. One server installation is able to handle multiple applications via different bundle identifiers
This procedure was published this morning, so I am not sure if it works as advertised. Basically it talks you through setting up Adhoc distribution OTA in something like ten easy steps. share|improve this answer answered Feb 21 '11 at 10:47
+1 This is the best answer for our QA.
Not the answer you're looking for?	Browse other questions tagged iphone cocoa-touch ipad itunes adhoc or ask your own question.	asked


text:
2 bedroom flat for sale in Stokers Close, Dunstable, Bedfordshire, LU5, LU5
www.rightmove.co.uk/property/61026176
Situated in the highly sought after development on Stokers Close with excellent transport links and local amenities.An immaculately presented and very spacious two double bedroom upper floor flat offered for sale with no upper chain.Benefits include entrance hall, lounge, kitchen, two double bedrooms, family bathroom and an en suite to the master bedroom.
Hall 4' x 8'3" (1.22m x 2.51m). Wooden front door. Carpeted flooring.
Living Room 10'7" x 13'7" (3.23m x 4.14m). UPVC Juliet style balcony double glazed doors. Double glazed uPVC window facing the rear. Radiator, carpeted flooring.
Kitchen 6'1" x 10'9" (1.85m x 3.28m). Double glazed uPVC window facing the rear. Laminate flooring, part tiled walls, original coving. Roll top work surface, wall and base units, one and a half bowl sink with mixer tap and drainer. Integrated oven and gas hob.
Bedroom 1 10'5" x 10'4" (3.18m x 3.15m). Double glazed uPVC window facing the side. Radiator, carpeted flooring.
En-suite 5'4" x 5'8" (1.63m x 1.73m). Tiled flooring, part tiled walls. Low level WC, walk-in shower, pedestal sink.
Bedroom 2 10'3" x 8'8" (3.12m x 2.64m). Double glazed uPVC window facing the side. Radiator, carpeted flooring.
Bathroom 6'1" x 6'7" (1.85m x 2m). Tiled flooring, part tiled walls. Low level WC, panelled bath with mixer tap, shower over bath, pedestal sink with mixer tap.
To view this media, please visit the on-line version of this page at www.rightmove.co.uk/property-for-sale/property-61026176.html
Disclaimer - Property reference LDU150502. The information displayed about this property comprises a property advertisement. Rightmove.co.uk makes no warranty as to the accuracy or completeness of the advertisement or any linked or associated information, and Rightmove has no control over the content. This property advertisement does not constitute property particulars. The information is provided and maintained by Taylors Estate Agents, Dunstable. Please contact the selling agent or developer directly to obtain any information which may be available under the terms of The Energy Performance of Buildings (Certificates and Inspections) (England and Wales) Regulations 2007 or the Home Report if in relation to a residential property in Scotland.
11 Dec 2017 73 Stokers Close, LU5 £165,000
30 Nov 2017 82 Stokers Close, LU5 £194,000
12 Oct 2017 58 Stokers Close, LU5 £205,000


text:
Red Sheer Blouses
Product - Women Lace Decorated Beautiful Valentine Day Blouse Red
Women Lace Decorated Beautiful Valentine Day Blouse Red
Product - Women Round Neck Chiffon Comfort Tank Top Blouse Red
Women Round Neck Chiffon Comfort Tank Top Blouse Red
Product - Women Knitted Strap Top Vest Camisole Red Vine
Women Knitted Strap Top Vest Camisole Red Vine
Product - Women Sleeveless Spaghetti Strap Casual Camisole Top Wearing Red Vine
Product - J_H_I Dude! Whats Wrong With You! Humor Gift for Birthday Christmas Party Womens Shirts Flowy Boxy
J_H_I Dude! Whats Wrong With You! Humor Gift for Birthday Christmas Party Womens Shirts Flowy Boxy
Product - Nunavut Map What to do in Nunavut Canada Womens Long Sleeve Shirts Flowy
Nunavut Map What to do in Nunavut Canada Womens Long Sleeve Shirts Flowy
Product - Spain Spain Womens Shirts Slouchy
Spain Spain Womens Shirts Slouchy
Product - J_H_I Coil Wick Drip Vape Repeat Birthday Christmas Gift Match w Leggings Hats Shoes Gift for Matching Couples Birthday Christmas Party Womens Shirts Flowy Boxy
J_H_I Coil Wick Drip Vape Repeat Birthday Christmas Gift Match w Leggings Hats Shoes Gift for Matching Couples Birthday Christmas Party Womens Shirts Flowy Boxy
Product - Czech Czech Republic Womens Tops
Czech Czech Republic Womens Tops
Product - J_H_I CA Mom California Map Flag Home of University of Los Angeles UCLA USC CSLA Womens Long Sleeve Shirts Flowy
J_H_I CA Mom California Map Flag Home of University of Los Angeles UCLA USC CSLA Womens Long Sleeve Shirts Flowy
Product - UltraClub Women's Basic Blended Pique Polo Shirt, Style 8560L
UltraClub Women's Basic Blended Pique Polo Shirt, Style 8560L
Product - Ultraclub Women's Jacquard Performance Polo, Style 8250L
Ultraclub Women's Jacquard Performance Polo, Style 8250L
Product - Women Lace Sleeves Plus size Shirt and Blouse Red Vine
Women Lace Sleeves Plus size Shirt and Blouse Red Vine


text:
Popular right now in New York (NY) Hotel Azure 120 Lafayette Street Deluxe Queen Bed booked 3 minutes, 19 seconds ago Wyndham Garden Long Island City Manhattan View Hotel 44-29 9th Street King Bed City View - NonSmoking booked 32 minutes, 39 seconds ago Bedford Hotel 118 East 40th Street Standard Room booked 40 minutes, 42 seconds ago The Milburn Hotel 242 West 76th Street Standard One Bedroom Suite King/2 Twin booked 46 minutes, 46 seconds ago Ramada Queens 164-40 Hillside Avenue King Room booked 46 minutes, 50 seconds ago Great reasons to book with Agoda
New York (NY) is famous for popular attractions like Jackson Diner. Agoda.com has secured the lowest rates at hotels near many other Restaurants and Cafes. Finding the perfect hotel for your next trip to see Jackson Diner is easy via Agoda.com, with options such as Westway Hotel Laguardia Airport and The Parc Hotel. Reservations for hotels close to Jackson Diner are made easy via Agoda.com's secure on-line booking form. Convenient search tools and informative hotel pages make finding New York (NY) hotels easy. Over 3,500,000 travelers have chosen Agoda.com to find the perfect hotel near places like Jackson Diner.
When visiting New York (NY), you'll feel right at home at Hampton Inn New York LaGuardia Airport, which offers quality accommodation and great service. From here, guests can enjoy easy access to all that the lively city has to offer. Visitors to the hotel can take pleasure in touring the city's top attractions: LaGuardia Airport, Louis Armstrong House, Shea Stadium. Hampton Inn New York LaGuardia Airport offers impeccable service and all the essential amenities to invigorate travelers. Guests of the hotel can enjoy on-site features like elevator, tours, smoking area, laundry service, Wi-Fi in public areas. The ambiance of Hampton Inn New York LaGuardia Airport is reflected in every guestroom. hair dryer, inhouse movies, ironing facilities, non smoking rooms, shower are just some of the facilities that can be found throughout the property. The complete list of recreational facilities is available at the hotel, including fitness center. Whatever your reason for visiting New York (NY), the Hampton Inn New York LaGuardia Airport is the perfect venue for an exhilarating and exciting break away.

value: This website is a Singaporean online travel agency and metasearch engine for hotels, vacation rentals, flights, and airport transfer. It is owned by Agoda Company Pte.


text:
NHS out-of-hours care is out of cash, out of luck
Mon 29 Dec 2014 14.25 EST Last modified on Wed 14 Feb 2018 16.37 EST
'As an insider, I can see under-resourced out-of-hours services having a knock-on effect on ambulances and hospitals,' writes Dr Chris Smith. Photograph: Mike Goldwater/Alamy
My father started out as a single-handed GP, was on call 24/7 and would know all of his patients. Sleepless nights reduced to one in three as other doctors joined his surgery. Then two surgeries combined to share on-call duties between around 14 doctors, but they would still know most of the unwell patients. Across the UK, out-of-hours provision was provided by similar-sized GP co-operatives.
The 2004 GP contract did not provide GP surgeries with adequate funding for out-of-hours service provision. Consequently, this shifted to larger providers.
These days, in an attempt to create economies of scale, out-of-hours services cover even larger geographical areas, with contracts given to private providers. GPs, as shift-workers, visit patients who they have probably never met before and will never meet again.
Over Christmas I did several out-of-hours shifts in Hampshire. The waiting times for home visits were often in excess of 12 hours (the “target” is six). The majority of these patients were frail and elderly, vulnerable and often unable to speak out. In one tragic case I was greeted by the patient’s grieving son and daughter. She had called the out-of-hours service 12 hours previously, complaining of breathing problems; by the time I arrived, her body had already been taken to the undertakers.
Service pressures over the Christmas period are entirely predictable.As an insider, I can see under-resourced out-of-hours services having a knock-on effect on ambulances and hospitals. There is an urgent need for adequately funded, local and responsive out-of-hours services, run by GPs providing care for patients in their local area.
• Why does Francis Maude (Health mutuals are not private firms, Letter, 26 December) continue to deny a Tory agenda of NHS privatisation? In doing so, he contradicts his fellow Cabinet Office minister Oliver Letwin, who defines privatisation in his 1988 book, Privatising the World, as: outsourcing public sector services to private sector companies; deregulation of public sector monopolies; and “trade sales” into the private sector of public sector bodies deemed to be “failing”. Reform of the NHS so far satisfies all of Letwin’s privatisation criteria, so this should not be in any doubt.
More doubtful are the prospects for any of Maude’s envisioned “mutuals” in the non-free-market environment of NHS tendering. Maude should know better than most that social enterprises – which are companies, not public sector bodies – won’t last two shakes of a reindeer’s tail trying to compete with international healthcare giants looking for business in the UK. Social enterprises for community services – once taken out of the public sector – have already lost out in a big way to the likes of Virgin, resulting in another set of NHS services permanently lost to the public sector.
At this point in the argument, ministers tend to resort to claiming “it’s up to GP-led clinical commissioning groups to decide who gets awarded contracts”. Aggressive and expensive litigation by private providers claiming that they were unfairly denied NHS contracts, together with the stringencies of EU competition law, mean that CCGs’ hands are too tightly tied and it is the market that decides instead. There is no free market in health. The direction of travel is one-way, stepwise, towards privatisation under foreign healthcare giants who want into UK business.
Dr Nick Mann (GP)
• There is no need to spin off large chunks of the NHS into not-for-profit mutual firms. There is a long track record of mutuals being bought/taken over/converted into commercial firms, often fuelled by large debts. This has made a few individuals very rich while those who work in the ex-mutuals get poorer pay and pensions, and frequently redundancies. The ill now leave hospital not as patients but as clients whose continuity and coordination of care become difficult. It does not serve them well. Fragmentation of services is a result of political ideology and, frankly, a deceit. Mr Maude will surely remember the enthusiasm for the conversion of mutual building societies into plcs.
Dr James Chang
• Despite the mandatory mild scepticism, you are still taken in by the flashy big science and personalised medicine rhetoric of the “genomics revolution” (Editorial, 23 December). Some revolution: it’s been running 30 years, and the UK still has the worst common adult cancer outcomes among comparable countries, with no evidence of improvement relative to the others. Countless have died prematurely because we cannot deliver the same level of conventional care as Canada or Australia. How spending £300m on the luxury of the 100,000 genome project is practically going to help anyone isn’t easy to understand. It may uncover or refine diagnoses in the 70% of subjects with rare genetic conditions, but that’s of little consolation when we have only vague and distant potential of treatments (which are always a decade away). As to the dilemma, give £150m to cancer treatment now, the rest to fund more paramedics and ambulance personnel, and put the genomics revolution on hold until the NHS has stopped falling apart.
Plans are unfunded, undefined, unrealistic and would see routine operations cancelled on weekdays, says BMA
Francis Maude: give private firms a bigger role in NHS to combat 'endless process and bureaucracy' – video
The Cabinet Office minister criticises the government's £5.3bn central policy to save the NHS
Healthcare mutuals are not private firms
Misapprehension about mutuals