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Sports & Outdoors Outdoor Sports Bikes Parts & Tools ACS Z Mag 20" Front Wheel, 5 Spoke 3/8" Axle Black 0.0 stars 0.0 stars Write a review Write a review ratings Q&A By: ACS About this item - Brand new- In the manufacturer's retail packaging- With full factory warranty Read more… Reduced Price $42.17 $42.17 + FREE shipping List price $61.00 Save $18.83 Only 6 left! Sold & Shipped by My Goods Faster shipping options available at checkout Pickup not available from this seller Loading options... Sold & Shipped by My Goods Qty: 1 2 3 4 5 6 7 8 9 10 11 12 Add to Cart
Add to List Add to Registry Shipping See delivery options FREE pickup Not available FREE shipping from this seller Close Shipping Shipping options from My Goods Find We don't recognize that location. Check your information and try again. Type Arrives Cost Standard Data unavailable Free per order Value Data unavailable Free per order You’ll see exact shipping costs and arrival dates when you check out. Pickup not available Close Pickup This item is not available for pickup or at any of the Walmarts within 50 miles of your location. Add to List Add to Registry Faster shipping options available at checkout Pickup not available from this seller 4 other sellers from $55.93 $55.93 + Free shipping Sold & Shipped by Xtreme Bike & Sport LLC $68.99 + $65.85 shipping Sold & Shipped by Wheel and Sprocket Inc. Compare all 5 sellers Customers also viewed these products Reduced Price $48.87 List price $70.69 Save $21.82 ACS Z Mag 5 Spoke Rear Black Mag Wheel ShippingPass $58.99 Acs Mag Stellar 3/8 3-Spoke Front Wheel ShippingPass $51.85 ACS Stellar Mag Rear Wheel Black 3/8" Axle ShippingPass $22.99 Wheel Master 12 Mag Wheels: WHL MAG 12in WM SCOOTER WHT ShippingPass $129.00 20" Mongoose Mode 270 Mag Boys' Freestyle Bike, Black 4.0 stars 12 ratings ShippingPass $21.73 Wheel MAG 12in WM Front Black ShippingPass $43.99 Wheel Master 20in BMX RR 20x2.125 STL CP 36 KT CB 110mm 12gUCP ShippingPass Rollback $249.00 Was $299.00 Save $50.00 26" Mongoose Dolomite Men's 7-speed All-Terrain Fat Tire Mountain Bike, Navy Blue/Red 4.5 stars 398 ratings ShippingPass from $7.94 Ventura Touch Gloves, Large/X-Large, Gray ShippingPass $219.00 29" Mongoose Ledge 3.1 Men's Mountain Bike, Black/Blue 3.5 stars 54 ratings ShippingPass Rollback from $119.00 26" Hyper Havoc Full Suspension Men's Mountain Bike, Black 4.0 stars 476 ratings ShippingPass $19.96 Fuze Wheel Writer 2.0 Bike Wheel Accessory 3.5 stars 8 ratings ShippingPass Rollback $99.00 26" Mongoose Ledge 2.1 Men's Mountain Bike 4.0 stars 5 ratings ShippingPass Check out these related products $39.95 Loloi 1'6" x 1'6" Cotton Down Pillow in Black and White ShippingPass Clearance Reduced Price from $49.00 Loloi 1'1" x 1'9" Cotton Poly Pillow in Black ShippingPass $74.36 Duro HF343 Excelerator All-Terrain Front Tire 80/100-21 ShippingPass Clearance $36.00 Loloi 1'6" x 1'6" Cotton Down Pillow in White and Black ShippingPass $39.41 NCAA Tire Cover by Holland Bar Stool - Georgia Bulldogs, White - 29 L x 8 W ShippingPass $39.41 NCAA Tire Cover by Holland Bar Stool - Illinois State, White - 29 L x 8 W ShippingPass Reduced Price $49.00 Loloi 1'1" x 1'9" Cotton Down Pillow in Black and White ShippingPass Reduced Price $92.30 List price $182.96 Save $90.66 1.5mm Knife Edge Round Hoops in 14K Yellow Gold, 20mm (3/4 Inch) ShippingPass $40.95 WTB Comfort Comp Black ShippingPass $75.93 BADGER B20 Fire Extinguisher Bracket, 20 lb. ShippingPass $79.99 G Sport Simian Black Front Hub 36h 3/8" Axle ShippingPass $42.77 Evoke EV-HDB-CRMO, 27x8.25x22.2, Black ShippingPass $25.04 Ergon GS2-S White/Black ShippingPass About this item Customer reviews Item recommendations Policies Back to top About this item Important Made in USA Origin Disclaimer: For certain items sold by Walmart on Walmart.com, the displayed country of origin
recommended that you rely on product packaging or manufacturer information. 20" five-spoke mag wheel option with a retro aesthetic in mind.* Injection molded nylon construction* 45 psi recommended tire inflationItem Specifications---Color: BlackISO Diameter: 406 / 20" BMXValve Length: SchraderTire Type: ClincherSpoke Info: MagRim: ACS MagSkewer Included: N/ADefined Color: BlackFront Axle: 3/8" x 100mmHub Color: BlackRim Material: PlasticHub/Brake Compatibility: Rim BrakeEyelets: NoneSpoke Color: BlackRim Color: Black About this item Important Made in USA Origin Disclaimer: For certain items sold by Walmart on Walmart.com, the displayed country of origin
recommended that you rely on product packaging or manufacturer information. 20" five-spoke mag wheel option with a retro aesthetic in mind.* Injection molded nylon construction* 45 psi recommended tire inflationItem Specifications---Color: BlackISO Diameter: 406 / 20" BMXValve Length: SchraderTire Type: ClincherSpoke Info: MagRim: ACS MagSkewer Included: N/ADefined Color: BlackFront Axle: 3/8" x 100mmHub Color: BlackRim Material: PlasticHub/Brake Compatibility: Rim BrakeEyelets: NoneSpoke Color: BlackRim Color: Black 20" five-spoke mag wheel option with a retro aesthetic in mind.
Injection molded nylon construction 45 psi recommended tire inflation Item Specifications Color Black ISO Diameter 406 / 20" BMX Valve Length Schrader Tire Type Clincher Spoke Info Mag Rim ACS Mag Skewer Included N/A Defined Color Black Front Axle 3/8" x 100mm Hub Color Black Rim Material Plastic Hub/Brake Compatibility Rim Brake Eyelets None Spoke Color Black Rim Color Black Specifications Condition: New Manufacturer Part Number: 10910-0381 Color: Black Model: Z Mag Brand: ACS Assembled Product Dimensions (L x W x H): 20.00 x 20.00 x 6.50 Inches Show Explore related products 24" Bike Tires Derailleur Cables 700C Tires Presta Valve Stems & Forks Women's Swimming Caps Customer Q&A Back Ask a question Back to questions Questions & Answers 0 questions Ask a question Back to questions Ask a question If you would like to share feedback with us about pricing, delivery or other customer service issues, please contact customer service directly. Question Q&A tips and guidelines Q&A Exchange Guidelines When writing your question or answer, please follow these guidelines: Do: Make sure your question is directly related to the product Do: Be specific and provide as many details as possible Do: Include the model number (if applicable) Do: Write your question in English Do Not: Include personal information (such as your full name) All submitted questions and answers are subject to the terms set forth in our Terms and Conditions We reserve the right not to post your question or answer if it contains any of the following: Any information not related to the actual merchandise or topic Obscenities, discriminatory language or other language not suitable for a public forum Advertisements or “spam” content Email addresses, physical addresses or other forms of contact information Critical or spiteful comments on other questions or answers posted on the page or their authors Any imagery that demonstrates incorrect use of the merchandise Anything that Walmart deems to be inappropriate, at Walmart's discretion Additional details (optional) Provide as many details as possible, including the model number (if applicable). Remember: Don’t include personal information (such as your full name). Nickname Nickname Send me an email when my question is answered Email address I agree to the Terms & Conditions Submit Cancel Preview Preview Question answers by an anonymous customer answers answers Last answer: Answer this question Cancel my answer Answer this question Submit Edit Cancel Thank you. Questions will be checked against our question guidelines and posted within five to seven business days. Customer Reviews Write a review Be the first to review this item. Share your rating and review so that other customers can decide if this is the right item for them.

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Stoke-On-Trent auction properties. Find auction property for sale in Stoke-On-Trent, Staffordshire
Find auction property for sale in Stoke-On-Trent, Staffordshire
Find auction properties for sale in Stoke-On-Trent, Staffordshire
21-30 of 48 auction properties for sale found
Only 5% deposit required on new homes at Weston Heights with Help to Buy*
Market Street, Stoke-on-Trent, Staffordshire
For Sale by public auction on 12th May 2014. Live online bidding available. Three storey building comprising ground floor retail unit with planning consent for cafe (A3) and upper floors self contained flat with private parking to the rear. Located within Longton town centre. Planning Ref: 53792...
19 Nursery Street, Stoke-on-Trent, ST4 4BS
For sale by Modern Method of Auction: Starting Bid Price £50,000.00 plus Reservation Fees. A two bedroom terraced house needing refurbishment. The property is gas central heated and double glazed and is located close to the amenities of Stoke town centre.
For Sale by Public auction 12th May 2014. Two Bedroomed Mid Terraced House. Benefits from UPVC double glazing, gas central heating and rear yard....
Marketed by Butters John Bee, Longton.
Call: 01782 606949
Aubrey Street, Stoke-on-Trent, Stoke-On-Trent
A detached two bedroom property in need of complete refurbishment located in Goldenhill, Stoke on Trent. For more information or to arrange a viewing contact contact Butters John Bee Kidsgrove on 01782 784442....
Farland Grove, Chell, Stoke-on-Trent
Two bedroom town house in need of modernisation benefiting from gas central heating and partial double glazing. To be offered For Sale by Public Auction to be held on Monday 12th May 2014 at 6.30 pm at The Best Western Moat House Hotel, Festival Park, Stoke on Trent. Apply Hanley office....
Call: 01782 585125
Dartmouth Street, Burslem, Stoke-on-Trent
Forecourted mid terraced house benefiting from double glazed windows. To be offered For Sale by Public Auction to be held on Monday 12th May 2014 at 6.30 pm at The Best Western Moat House Hotel, Festival Park, Stoke on Trent. Apply Hanley office....
Guide Price £47,000
Bourne Street, Stoke-on-Trent, Staffordshire
For Sale by public auction on 12th May 2014. Live online bidding available. A potential residential development site extending to 0.40 acres. The current vendor has had discussions with the local council for planning of a pair of 4 bedroom semi-detached houses and detached 4 bedroom dwelling....
Mid terrace property close to Hanley town centre, Staffordshire University & Stoke railway station with gas central heating, double glazing, ground and first floor bathroom and rear garden. For Sale by Public Auction on 12th May 2014 at 6.30 pm at The Best Western Moat House Hotel, Stoke on Trent...
Heron Street, Heron Cross, Stoke-on-Trent
For Sale By Public Auction on 12th May 2014. A two bedroom terraced house situated in a popular area within easy access to excellent commuter road links. Further benefits include gas central heating and UPVC double glazing....
Riley Street South, Burslem, Stoke-on-Trent
End terraced house with gas central heating and double glazing and currently let at �395 per calendar month. To be offered For Sale by Public Auction to be held on Monday 12th May 2014 at 6.30 pm at The Best Western Moat House Hotel, Festival Park, Stoke on Trent. Apply Hanley office....
01782 585125
01782 606949

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Williamsburg, MI Outdoor Play Systems
Outdoor Play Systems near Williamsburg	Traverse City
Williamsburg, MI Outdoor Play Equipment SuppliersWith little ones in the home, safety is likely foremost in your mind, especially for structures that are designed for them to climb on, swing from and jump over. If you’ve decided to add an outdoor play system to your yard, it’s well worth hiring a Williamsburg, MI professional to craft one that’s solid and secure. Even if you choose to purchase a kit, an installer can ensure that it’s put together correctly and that it will hold up with heavy use. More near
View all professionals in Williamsburg, MI Search for Outdoor Play Systems List your business here for free - Learn More What Does an Outdoor Play System Professional Do?Outdoor play system professionals design and build custom playhouses, playsets and other equipment, and also install prefabricated kits. They can design a playhouse to look like the main home or come up with a completely unique concept that suits the parents’ and kids’ fancies. Because playset kits can be quite tricky and time consuming to assemble, many Michigan homeowners hire professionals to handle the job both for convenience and for peace of mind with regard to safety and structural integrity. Here are some related professionals and vendors to complement the work of outdoor play systems: Backyard Courts, Landscape Contractors, General Contractors, Carpenters.
Find an outdoor play system professional on Houzz. Narrow your search in the Professionals section of the website to Williamsburg, MI outdoor play systems. You can also search farther afield for a pro who fits your project’s needs. You can find more outdoor play systems in Traverse City, Kalkaska, Greilickville, Rapid City and Chums Corner.	Professional Categories in Williamsburg

value: This website is an American website, online community and software for architecture; interior design and decorating; landscape design and home improvement. It was founded in 2009 and is based in Palo Alto, California.


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SAMPLE PLAY AUDIO SAMPLE http%3A%2F%2Fsamples.audible.com%2Fbk%2Facx0%2F003500%2Fbk_acx0_003500_sample.mp3+flashcontent1VAJ6MGV61R6QD6PTPF80 A Spider on My Tongue
Frozen Free Fall Game Guide (Unabridged) Buried (Unabridged) Flashover (Unabridged) What Members Say

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Military of the European Union - Wikipedia, the free encyclopedia
(Redirected from European Union Naval Force)
This article is about the totality of military cooperation between member states of the European Union, as well as national capabilities. For a more narrow presentation of the present structure of cooperation within the legal framework of the union, see Common Security and Defence Policy.
∟ European Defence Agency
∟ EU Institute for Security Studies
∟ EU Military Staff
∟ EU Military Committee
∟ EU Battlegroup
546 ships, 2,448 aircraft & 7,695 battle tanks
1,551,038 (2012)[1]
€192.5 billion (2012)[1]
1.55% (2012)[1]
Article 42 of the Treaty on European Union provides for substantial military integration within the institutional framework of the union.[2] Complete integration is an option that requires unanimity in the European Council of heads of state or government. For now it remains politically gridlocked considering the critical stance of the United Kingdom in particular.
Article 42 does also provide for a permanent structured cooperation between the armed forces of a subset of member states. As of 2015 this option has not been used, despite calls by prominent leaders such as former French President Nicolas Sarkozy, German Chancellor Angela Merkel, former Italian Foreign Minister Franco Frattini and former Belgian Prime Minister Guy Verhofstadt for a common defence for the Union.[3][4][5] However the debate has intensified by the standoff between the EU and Russia over Ukraine. With new calls for an EU military by EU commission president Jean-Claude Juncker and by other European leaders and policy makers like the head of the German parliament’s foreign policy committee Norbert Röttgen, saying an EU army was “a European vision whose time has come”.[6][7]
1.1 Western European Union
1.2 Common Security and Defence Policy
1.3 Initiative of the four
1.4 SAFE
2 Common Security and Defence Policy
2.1 Security strategy
2.2 Defence Agency
2.3 Military Committee and Staff
2.4 Institute for Security Studies
2.5 Battle groups
2.6 Security and Defence College
2.7 Helsinki Headline Goal
2.8 Development that is provided for
2.8.1 Complete integration
2.8.2 Permanent structured co-operation
3 Intergovernmental cooperation
3.1.1 Finabel
3.1.2 Eurocorps
3.1.3 I. German/Dutch Corps
3.1.4 Multinational Corps Northeast
3.1.5 Gendarmerie Force
3.2.1 Air Group
3.2.2 Air Transport Command
3.3 Naval
3.3.1 Maritime Force
3.4 Multi-component
3.4.1 Movement Coordination Centre
3.4.2 Organisation for Joint Armament Cooperation
3.4.3 Combined Joint Expeditionary Force
4 National militaries
4.1 Expenditure and personnel
4.2 Naval forces
4.3 Land forces
This article may require cleanup to meet Wikipedia's quality standards. The specific problem is: Untidy presentation of fruitless initiatives. Please help improve this article if you can. (December 2014)
Further information: Military history of Europe
Following the end of World War II and the defeat of the Axis Powers, the Dunkirk Treaty was signed by France and the United Kingdom on 4 March 1947 as a Treaty of Alliance and Mutual Assistance against a possible German attack in the aftermath of World War II. The Dunkirk Treaty entered into force on 8 September 1947. The 1948 Treaty of Brussels established the military Western Union Defence Organisation with an allied European command structure under Field Marshal Montgomery. Western European powers, except for Ireland, Sweden, Finland and Austria, signed the North Atlantic Treaty alongside the United States and Canada which only created a passive defence association until 1951 when, during the Korean War, the existing and fully functioning Western Union Defence Organisation was augmented to form the North Atlantic Treaty Organisation, NATO.
Further information: Western European Union
In the early 1950s, France, Germany, Italy and the Benelux countries made an attempt to integrate the militaries of mainland western Europe, through the treaty establishing the European Defence Community (EDC). This scheme did however not enter into force, as it failed to obtain approval for ratification in the French National Assembly, where Gaullists feared for national sovereignty and Communists opposed a European military consolidation that could rival the Soviet Union. The failure to establish the EDC resulted in the 1954 amendment of the Treaty of Brussels at the London and Paris Conferences which in replacement of EDC established the political Western European Union (WEU) out of the earlier established military Western Union Defence Organisation and included West Germany and Italy in both WEU and NATO as the conference ended the occupation of West Germany and the defence aims had shifted from Germany to the Soviet Union.
Common Security and Defence Policy[edit]
Out of the 28 EU member states, 22 are also members of NATO. Another 3 NATO members are EU Applicants and 1 is solely a member of the European Economic Area. In 1996, the Western European Union (WEU) was tasked by NATO to implement a European Security and Defence Identity within NATO, which later was passed over to the EU Common Security and Defence Policy as all Western European Union functions were transferred to the European Union through the Lisbon Treaty. The memberships of the EU and NATO are distinct, and some EU member states are traditionally neutral on defence issues. Several of the new EU member states were formerly members of the Warsaw Pact. The Berlin Plus agreement is a comprehensive package of agreements made between NATO and the EU in 2002; it allows the EU to draw on some of NATO's assets in its own peacekeeping operations, subject to a "right of first refusal" in that NATO must first decline to intervene in a given crisis.
Following the Kosovo War in 1999, the European Council agreed that "the Union must have the capacity for autonomous action, backed by credible military forces, the means to decide to use them, and the readiness to do so, in order to respond to international crises without prejudice to actions by NATO". To that end, a number of efforts were made to increase the EU's military capability, notably the Helsinki Headline Goal process. After much discussion, the most concrete result was the EU Battlegroups initiative, each of which is planned to be able to deploy quickly about 1500 personnel.[8]
The EU currently has a limited mandate over defence issues, with a role to explore the issue of European defence agreed to in the Amsterdam Treaty, as well as oversight of the Helsinki Headline Goal Force Catalogue (the 'European Rapid Reaction Force') processes. However, some EU states may and do make multilateral agreements about defence issues outside of the EU structures.
Initiative of the four[edit]
The European Defence Initiative is a proposal for enhanced European Union defence cooperation presented by France, Germany, Belgium and Luxembourg in Brussels on 29 April 2003. It was based on the reinforced cooperation principle and aimed for better reactivity under the European Security and Defence Policy (ESDP).
Some critics felt that this intra-European process would be a source of tension in the transatlantic arena with NATO and some felt that this was a duplication of existing means with the call for a distinct European headquarters. There were also some concerns about a multi-speed Europe. Britain was initially opposed to the concept but subsequently modified its position in favour.[9]
On 20 February 2009 the European Parliament voted in favour of the creation of Synchronised Armed Forces Europe (SAFE) as a first step towards a true European military force. SAFE will be directed by an EU directorate, with its own training standards and operational doctrine. There are also plans to create an EU "Council of Defence Ministers" and "a European statute for soldiers within the framework of Safe governing training standards, operational doctrine and freedom of operational action".[10] EU forces have been deployed on peacekeeping missions from middle and northern Africa to Western Balkans and western Asia.[11] EU military operations are supported by a number of bodies, including the European Defence Agency, European Union Satellite Centre and the European Union Military Staff.[12] In an EU consisting of 28 members, substantial security and defence

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Naval bases in MoD fraud probe | Daily Mail Online
Prosecutors are investigating claims of fraud over bidding for Ministry of Defence contracts at two Scottish naval bases.
The allegations relate to "improper or corrupt tendering" during bidding for contracts for work on Royal Navy ships at the Rosyth and Faslane dockyards.
The Crown Office in Edinburgh has received two reports from Ministry of Defence Police detailing investigations into the allegations, which were first made four years ago. Elizabeth Munro, who is head of the Crown Office fraud unit, is currently studying the dossiers and will decide whether any charges should be brought.
A Crown Office spokeswoman said: "There is an ongoing investigation into allegations of fraud connected with Rosyth and Faslane.
"We have received a report from the Ministry of Defence Police and the matters are being looked into."
A Ministry of Defence Police spokesman said detectives had investigated the allegations and passed two reports on to the Crown Office.
The first dossier was handed over in September 2000 following an inquiry which started the previous year.
The Crown Office then ordered a second probe and a further report was given to officials last November.
The MoD Police spokesman said: "The allegations were of improper or corrupt tending and related to the flooring of warships."
Neither the MoD nor the Crown Office would discuss details of the allegations.

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Dairy Queen by Catherine Gilbert Murdock, Hardcover | Barnes & Noble®
"Finally, a football book a girl can love. . . . With humor, sports action and intelligence abundant, this tale has something for everyone."Publishers Weekly, starred Publishers Weekly, Starred"A fresh teen voice, great football action and cowsthis novel rocks."Kirkus Reviews, starred Kirkus Reviews, Starred"This extremely likable narrator invites readers into her confidence and then rewards them with an engrossing tale of love, family, and football."Horn Book Horn Book"In her debut novel, Murdock skillfully captures the messiness that comes with learning to open up to others and deal with life and love. " Columbus Dispatch

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Related Sequences for Nucleotide (Select 3907623) - Nucleotide - NCBI
Select item 39076231.Transposon delivery vector pUTkm1, complete sequence7,055 bp circular other-genetic Accession: AF102233.1 GI: 3907623 GenBank FASTA Graphics Related Sequences Select item 2559287332.Insertion vector pUTTnsTet, complete sequence9,410 bp circular other-genetic Accession: GQ371206.1 GI: 255928733 GenBank FASTA Graphics Related Sequences Select item 2559287283.Insertion vector pUTTnsCm, complete sequence8,952 bp circular other-genetic Accession: GQ371205.1 GI: 255928728 GenBank FASTA Graphics Related Sequences Select item 2559287234.Insertion vector pUTTnsKm, complete sequence9,568 bp circular other-genetic Accession: GQ371204.1 GI: 255928723 GenBank FASTA Graphics Related Sequences Select item 343983285.Transposon delivery vector pUT-miniTn5-gfp-tet, complete sequence8,296 bp circular DNA Accession: AY364166.1 GI: 34398328 GenBank FASTA Graphics Related Sequences Select item 3122844506.Mini Tn5 transposon vector pFAJ1819, complete sequence11,025 bp circular other-genetic Accession: HQ328084.1 GI: 312284450 GenBank FASTA Graphics Related Sequences Select item 734766107.Cloning vector pSCR001, complete sequence10,571 bp circular other-genetic Accession: DQ059989.1 GI: 73476610 GenBank FASTA Graphics Related Sequences Select item 2998232248.Suicide vector pJTluxCDABE-Cm*10,561 bp circular other Accession: FN594890.1 GI: 299823224 GenBank FASTA Graphics Related Sequences Select item 2263487909.Cloning vector pDMK3, complete sequence6,820 bp circular other-genetic Accession: FJ824848.1 GI: 226348790 GenBank FASTA Graphics Related Sequences Select item 564009110.Expression vector pIVET bla and cat genes4,499 bp circular other Accession: AJ243877.1 GI: 5640091 GenBank FASTA Graphics Related Sequences Select item 32739221511.R6K-based suicide vector pUT399-abrB DNA, complete sequence4,916 bp circular other Accession: AB610285.1 GI: 327392215 GenBank FASTA Graphics Related Sequences Select item 8466025312.Transconjugation vector pROKB18,810 bp circular other Accession: AM180349.1 GI: 84660253 GenBank FASTA Graphics Related Sequences Select item 8466024813.Transconjugation vector pROCKB28,860 bp circular other Accession: AM180348.1 GI: 84660248 GenBank FASTA Graphics Related Sequences Select item 4554877314.Cloning vector pDS132, complete sequence5,286 bp circular DNA Accession: AY489048.1 GI: 45548773 GenBank FASTA Graphics Related Sequences Select item 18358375115.Mutagenesis vector pGPI-SceI, complete sequence4,748 bp circular other-genetic Accession: EU372690.1 GI: 183583751 GenBank FASTA Graphics Related Sequences Select item 37533143916.Cloning vector pMCI002, complete sequence3,990 bp circular other-genetic Accession: JN788332.1 GI: 375331439 GenBank FASTA Graphics Related Sequences Select item 44328668817.Mutagenesis vector pGPI-SceI-2, complete sequence4,925 bp circular other-genetic Accession: KC409642.1 GI: 443286688 GenBank FASTA Graphics Related Sequences Select item 44328668218.Suicide vector pGPI-SceI-XCm, complete sequence6,601 bp circular other-genetic Accession: KC409641.1 GI: 443286682 GenBank FASTA Graphics Related Sequences Select item 19709178419.Vector pBT20-Dbla-Tel-FRT, complete sequence6,978 bp circular other-genetic Accession: EU626135.1 GI: 197091784 GenBank FASTA Graphics Related Sequences Select item 5985760720.TPA_exp: Suicide vector pTEC3,990 bp circular other Accession: BN000674.1 GI: 59857607 GenBank FASTA Graphics Related Sequences << First< PrevPage of 15Next >Last >>
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THE 10 CLOSEST Hotels to Coca Cola Visitor Center, Bnei Brak - TripAdvisor - Find Hotels Near Coca Cola Visitor Center
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Hotels near Coca Cola Visitor Center
Best Hotels Near Coca Cola Visitor Center, Bnei Brak, Israel
Rehov HaRav Kahanman 129, Bnei Brak 5155366, Israel
Read Reviews of Coca Cola Visitor Center
50 mi from Coca Cola Visitor Center
361 of 1,215 properties match your filters. Clear all filters
1,215 properties in Bnei Brak
3.0 miles from Coca Cola Visitor Center
#1 Best Value of 367 hotels in Bnei Brak
“Spending the last night of our holiday at the Crowne Plaza was the best option for having a relaxed end of our holiday. Nice and service-orientated staff, huge and clean rooms and a good breakfast made our stay...”
Highest-rated 4-star hotel within 4 miles of Coca Cola Visitor Center
4.0 miles from Coca Cola Visitor Center
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112 Ze'ev Jabotinsky Street, Petah Tiqwa 4959263, Israel
1.3 miles from Coca Cola Visitor Center
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2.5 miles from Coca Cola Visitor Center
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“It is a nice place to stay at The room was a bit small. Lovely pool on the roof which wasn’t empty and had a nice atmosphere Value for money is generally good - pretty cheap for the Tel Aviv area (it is actually...”
1.7 miles from Coca Cola Visitor Center
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“New hotel ( 3 years) located in Petha Tiqva in Israel, cross the st of Belinson Hospital and next door to the Big mall . Hotel is very nice, the stuff were very friendly and professional. They provide daily...”
2.2 miles from Coca Cola Visitor Center
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3.1 miles from Coca Cola Visitor Center
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“We arrived on in the early morning, we found the hotel reception to be kind of a blend between coffee shop and reception, the hotel parking lot is in a different place from the hotel. same building but you enter…”
3.2 miles from Coca Cola Visitor Center
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“My family stayed for one night before departing to the airport the next day at 9:45 pm. The reception staff, Dimitri, was so helpful to gave us the 2 hour late check out free of charge, that we visited Jaffa and...”
4.1 miles from Coca Cola Visitor Center
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“This small boutique hotel tucked away on busy Dizengoff Street was the perfect location for both the beach and great bars and cafes. The room was spacious and very clean and quiet and the staff were super friendly...”
3.8 miles from Coca Cola Visitor Center
#10 Best Value of 367 hotels in Bnei Brak
“Large room with comfortable beds. Nespresso machine in the room and free bottles of mineral water. Breakfast was excellent with everything that you could wish for. Very good coffe. Rooftop bar was also a nice…”
#11 Best Value of 367 hotels in Bnei Brak
“Great location, great service, bicycle loan, free (alcoholic) drinks in the library. Got email for to help us get there. Good advice on where and what to eat. Must be the best place to stay in Tel-Aviv!”
#12 Best Value of 367 hotels in Bnei Brak
“I had a quite, wonderful room, with a nice view on the new Dizengoff fountain. Front desk people were simply amazing! The location is the best! Close to the beach, close to city, museums, malls... nice area. I...”
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“This hotel has two things to recommend it: firstly it’s an excellent hotel, and secondly it is in a former modernist cinema. The location is central, on Dizengoff Square, with a number of local buses, and within...”
#14 Best Value of 367 hotels in Bnei Brak
“The Diaghilev, is just easy living. Lovely, bright and clean; everything at your finger tips; excellent staff; amenities, services, and service. Its just easy. Easy to be there, easy to rest, easy to get any...”
#15 Best Value of 367 hotels in Bnei Brak
“You can't beat this location, a few blocks from Dizengoff Square and all the retail around it, but also a short walk to the beach and also the car rental agencies at the hotels along the beach (Hertz, Avis, Sixt...”
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“We were really happy in the hotel! The recptionists are super super friendly and the rooms (we had a suite) are big and really clean! Good location - 10 min to the beach - many cafes and bars around. In the hall...”
3.5 miles from Coca Cola Visitor Center
#17 Best Value of 367 hotels in Bnei Brak

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Amazon.co.uk:Customer Reviews: Being In Balance
Amazon.co.uk Today's Deals Warehouse Deals Outlet Subscribe & Save Vouchers Amazon Family Amazon Prime Amazon Video Amazon Student Mobile Apps Amazon Pickup Locations Amazon Assistant Made in Italy Being In Balance
Customer Reviews4.7 out of 5 stars154.7 out of 5 stars5 star124 star13 star22 star01 star0Being In BalancebyDr Wayne W. DyerFormat: Audio CD|ChangePrice:£14.99+ Free shipping with Amazon PrimeYour rating(Clear)Rate this itemYour rating
5.0 out of 5 starsBalance your life NOW!ByP. Bryanton 15 January 2007This one of the most beautiful books on changing your life out there. Dr Dyers simple yet effect techniques have had the most profound effects on me even during reading it for the first time. My brother is the same it has completely changed our lives, how we see the world and how we interact with it. BUY THIS BOOK AND SEE THE WORLD NEW!
3.0 out of 5 starsNot convincedByAmazon Customeron 9 October 2014Interesting enough audio book. However somewhat simplified approach to success in life. While you'll definitely get some encouragement and food for thought, I personally missed some depth of thinking, realism and underlying knowledge. An overconfident account of achieving balance.
All reviewersVerified purchase onlyAll reviewersAll stars5 star only4 star only3 star only2 star only1 star onlyAll positiveAll criticalAll starsAll formatsFormat: Audio CDAll formatsSearchThere was a problem filtering reviews right now. Please try again later.5.0 out of 5 starsBalance your life NOW!ByP. Bryanton 15 January 2007Format: PaperbackThis one of the most beautiful books on changing your life out there. Dr Dyers simple yet effect techniques have had the most profound effects on me even during reading it for the first time. My brother is the same it has completely changed our lives, how we see the world and how we interact with it. BUY THIS BOOK AND SEE THE WORLD NEW!0Comment|
There was a problem loading the comments at the moment. Please try again later.3.0 out of 5 starsNot convincedByAmazon Customeron 9 October 2014Format: Audio CD|Verified PurchaseInteresting enough audio book. However somewhat simplified approach to success in life. While you'll definitely get some encouragement and food for thought, I personally missed some depth of thinking, realism and underlying knowledge. An overconfident account of achieving balance.0Comment|
There was a problem loading the comments at the moment. Please try again later.5.0 out of 5 starsAMAZINGByDONAon 20 November 2010Format: PaperbackThis is a book to treasure.Every single word is full of meanings.It needs to be read over and over and over and over again.Only so the miracle of simply being will happen in your Life.I bought it for dearest friends.This book is my best friend.Highly recommend it.0Comment|
There was a problem loading the comments at the moment. Please try again later.4.0 out of 5 starsGood listeningByA Revieweron 18 July 2010Format: Audio CDI enjoyed listening to this in the car - hearfelt and warm if not a little schamlzy, the advice and sentiments will stand any listener in great stead.0Comment|
There was a problem loading the comments at the moment. Please try again later.5.0 out of 5 starsLove this bookByYLon 21 March 2016Format: Paperback|Verified PurchaseLove this book, I've read many of Dr Dyer's books and this one is just as good as all the others. The book has a large print, great lay out and is easy to read, would reccommend to anyone who is looking for help to bring their lives into balance.0Comment|Was this review helpful to you?YesNoReport abusePlease write at least one wordYou must purchase at least one item from Amazon to post a commentA problem occurred while submitting your comment. Please try again later.Sign in and comment
There was a problem loading the comments at the moment. Please try again later.5.0 out of 5 starsThank youBySumieon 19 August 2013Format: Paperback|Verified PurchaseThank you for your good item and your quick response. I will let others know about this book and will use the shop again if I see it.0Comment|
There was a problem loading the comments at the moment. Please try again later.5.0 out of 5 starsVery goodBygerry divineon 14 October 2015Format: Kindle Edition|Verified PurchaseIt is very insightful, inspiring, informative and interesting book .it has a very balanced view of human existence and God.0Comment|Was this review helpful to you?YesNoReport abusePlease write at least one wordYou must purchase at least one item from Amazon to post a commentA problem occurred while submitting your comment. Please try again later.Sign in and comment
There was a problem loading the comments at the moment. Please try again later.5.0 out of 5 starsFood for thoughtByAmazon Customeron 26 July 2014Format: Kindle Edition|Verified PurchaseWayne Dyer makes you really think about your life and how you create it. Interesting reading and something to aspire to.0Comment|Was this review helpful to you?YesNoReport abusePlease write at least one wordYou must purchase at least one item from Amazon to post a commentA problem occurred while submitting your comment. Please try again later.Sign in and comment
There was a problem loading the comments at the moment. Please try again later.5.0 out of 5 starsFive StarsByNancyon 16 November 2015Format: Kindle Edition|Verified PurchaseSimply love Wayne and his legacy lives on. Great book0Comment|Was this review helpful to you?YesNoReport abusePlease write at least one wordYou must purchase at least one item from Amazon to post a commentA problem occurred while submitting your comment. Please try again later.Sign in and comment
There was a problem loading the comments at the moment. Please try again later.5.0 out of 5 starsbest bit of adviceByJofudgeon 17 March 2016Format: Kindle Edition|Verified PurchaseVery easy to read and understand.0Comment|Was this review helpful to you?YesNoReport abusePlease write at least one wordYou must purchase at least one item from Amazon to post a commentA problem occurred while submitting your comment. Please try again later.Sign in and comment
Customers also viewed these itemsYour Erroneous Zones: Escape negative thinking and take control of your lifebyDr. Wayne W. Dyer£9.984.7 out of 5 stars91Change Your Thoughts, Change Your Life: Living The Wisdom Of The TaobyDr Wayne W. Dyer£12.084.6 out of 5 stars114The Power Of Intention: Change The Way You Look At Things And The Things You Look At...byDr Wayne W. Dyer£11.994.7 out of 5 stars11210 Secrets for Success and Inner PeacebyDr Wayne W. Dyer£8.994.8 out of 5 stars24Need customer service? Click here‹ See all details for Being In Balance

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The Mill Creek sets claim to contain the original uncut broadcast edits, with most though not all of the original music intact.[10] However, upon closer inspection, it's revealed that they're mostly repeats of the Fox sets with the majority of the music still omitted.[11][12][13][14]
^ "Mill Creek Entertainment and Carsey-Werner Television Distribution Ink Deal to Release That '70s Show" (PDF). Millcreekent.com. Archived from the original (PDF) on 2013-09-28. Retrieved 2013-10-07.
^ "That '70s Show DVD news: Announcement for That '70s Show - Season 1 and That '70s Show - Season 2 and That '70s Show - Biggest Hits". TVShowsOnDVD.com. Archived from the original on 2013-11-10. Retrieved 2013-10-07.
^ "That '70s Show DVD news: Announcement for Season 3 and Season 4". TVShowsOnDVD.com. Archived from the original on 2013-11-10. Retrieved 2013-10-07.
^ "That '70s Show DVD news: Announcement for Season 5 and Season 6". TVShowsOnDVD.com. Archived from the original on 2013-11-10. Retrieved 2013-10-07.
^ "That '70s Show DVD news: Announcement for That '70s Show - Season 7 and That '70s Show - Season 8". TVShowsOnDVD.com. Archived from the original on 2013-11-10. Retrieved 2013-10-07.
^ "That '70s Show - Season 1". TV Shows on DVD. 20 March 2012. Archived from the original on 13 July 2015. Retrieved 11 July 2015.
^ "That '70s Show - Season 2". TV Shows on DVD. 16 October 2012. Archived from the original on 13 July 2015. Retrieved 11 July 2015.
^ "That '70s Show DVD news: Announcement for That '70s Show - The Complete Series". TVShowsOnDVD.com. Archived from the original on 2013-05-22. Retrieved 2013-10-07.
^ Official Studio Press Release, Package for 'The Complete Series' Blu-ray! Archived 2015-08-19 at the Wayback Machine
^ "That '70s Show - Season Three (Mill Creek) DVD Review - Sitcoms Online". sitcomsonline.com. Retrieved 2018-01-29.
^ "That '70s Show - Season Four (Mill Creek) DVD Review - Sitcoms Online". sitcomsonline.com. Retrieved 2018-01-29.
^ "That '70s Show - Season Five (Mill Creek) DVD Review - Sitcoms Online". sitcomsonline.com. Retrieved 2018-01-29.
^ "That '70s Show - Season Six (Mill Creek) DVD Review - Sitcoms Online". sitcomsonline.com. Retrieved 2018-01-29.
Retrieved from "https://en.wikipedia.org/w/index.php?title=List_of_That_%2770s_Show_home_video_releases&oldid=919260957"


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7up Bottle | eBay
7Up Commemorative Bottles
7Up Glass Bottles
7up Bottle Caps
7 Up Glass Bottles
7 Up Commemorative Bottle
VINTAGE 7 UP 10 OZ BOTTLE "YOU LIKE IT - IT LIKES YOU"
Amber Squat 7up Bottle Houston Texas
Bottle is 6 3/4” tall and is in good overall condition with some scratches and small nicks, no cracks.
Vintage Amber Squat 7 oz. 7UP Bottle, Embossed, Nashville Tennessee 8 Bubble
Rare Find. great addition to any collection. Some paint loss. Sold as seen in photos . Please see for details and to judge condition for yourself.
Vintage 10 Oz. (7 5/8") Green Embossed 7-Up Bottle, No Deposit / No Return
7-Up Acl Soda Pop Bottle Embossed 8 Bubble
You are bidding on a embossed 7-Up soda pop bottle with 8 bubbles The bottle is self is in very good condition with minor case where the label however is missing a lot of it as shown in the picture be...
Vintage Unopened 1960s 7up Soda Bottle (10 oz.)
Purchase comes with one Bottle.
7UP Soda Miniature 3 inch Glass Bottle
See photos. Sold as you see it.
7 - Up Pop Bottle - Maysville , Kentucky
It is clean on the outside and dirty on the inside. Can't state that for sure though. Most all these bottles are dirty and need a good bath. I will describe them as I list the best I can. I doubt that...
7-Up Bottle PAPER Label Vintage
Paper Label is intact and looks really nice. 7-Up Paper Label Bottle.
antique 7 up cooler ,vintage advertising with bottle openers
This is a nice old steel cooler with bottle openers on both ends. Has drain plug .more pics coming soon.
Vintage 1951 7Up 7 Up Soda Pop Bottle Gas Oil 30" Embossed Metal Sign
Rare ACL 7 Up Bottle
Bottle marked Fresno, Ca.
7 UP Soda Pop Bottle From Maysville , Kentucky
Front label has dark spots not sure if it would clean up or not. Most all these bottles are dirty and need a good bath. I will describe them as I list the best I can. I doubt that will happen at all f...
Vintage 7 Up bottle 1 Pint 12 fl. oz "You like it, It likes you"
The Red is still bright because it was not kept in the sun. The Paint and glass have a few nicks in it. The inside needs cleaned. It looks dirty on the bottom and there appears to be a water line arou...
RARE 7UP SWIMSUIT GIRL 8 BUBBLES DOTS BOTTLE CHARLOTTE N.C.
Up for sale today is a Rare Swimsuit girl this has 8 bubbles on it most only have 7 bubbles. The bottle is in very good condition has a slight chip on bottom edge. This bottle was made between 1931 an...
BUBBLE GIRL Vintage 7 UP Acl Soda Bottle - Tampa Fl Bottling
Cool 7 oz. bottle in good condition.
Vintage 1980's 7-UP Beverages Soda Pop Bottle 10 Oz.
Vintage 7-UP bottles. Circa 1980. Not in pristine condition but still nice shelf setters. 11 available.
7up Collectible Bottles - Indy 500 1978 and Notre Dame 1973
Two 7up collectible bottles - 1973 Notre Dame National Championship and 1978 Indianapolis 500! Notre Dame bottle lists all games and scores from undefeated season, including 24-23 victory over Alabam...
FULL 10oz LIKE YELLOW ACL SODA BOTTLE SEVEN-UP COMPANY 7UP
FULL 10oz HOWDY ROOT BEER ACL SODA BOTTLE SEVEN-UP COMPANY 7UP
FULL 10oz HOWDY STRAWBERRY ACL SODA BOTTLE SEVEN-UP COMPANY 7UP
Vintage 7 up Bottle 7- Bubbke Swim Front Swimming Girl Mankato Mn 1940's 7up
8" 7 0z bottle. In good condition with no chips or cracks. Some light stains. Also some bottom rim scratches. Produced in 1940 - 1946 See photos Contact me with questions From a smoke free home
Vintage 7up 7 oz Bottle with Girl in Swimsuit Label No. (4) of 5
7up, 7 ounce bottle with Girl in Bathing Suit Label. Bottled in Duluth, Minn. Bottom has: "G-94, Duraglas, 7-50, 5". I have other (4) other 7up bottles listed.
Vintage 7-UP Bottling CO. Los Angeles wooden crate, 6-73, (1973)
Very nice original 7up Bottling Company Of Los Angeles soda pop bottle crate.
Collectible 7UP Commemorative Bottle UCLA Bruins NCAA Championship John Wooden
All items I sell are 100% authentic and come from a pet-free and smoke-free home. If you have any questions, please feel free to ask. Make sure you check out my other listings for more great deals!!
VINTAGE 7Up Bottle made in Va.& DC IN GREAT CONDITION NO CHIPS OR CRACKS SEE PICTURES FOR BEST DESCRIPTION
Vintage Seven Up Soda Bottling Indianapolis 2, Indiana 7-Up Glass Ashtray Excel
Has nice vibrant graphics and is well preserved.
Vintage 7up 7 oz Bottle with 7 Bubbles Label No. (2) of 5
7up, 7 ounce bottle with 7 bubble label. Bottled in Chicago, Ill. Bottom has: G-94, 9-O-61, 15. I have other (4) other 7up bottles listed.
Vintage 7up 7 oz Bottle with 7 Bubbles Label No. (1) of 5
7up, 7 ounce bottle with 7 bubble label. Bottled in Globe-Miami Arizona. Bottom has: 23-O-55, 1K, Duraglas, 94-G. I have other (4) other 7up bottles listed.

value: This website is an American multinational e-commerce corporation based in San Jose, California, that facilitates consumer-to-consumer and business-to-consumer sales through its website.


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Kickstarter Project - South BayGeo Meetup (Mountain View, CA)
Posted 8/30/12 5:32 PM
user 59767902 Palo Alto, CAPost #: 51
I am happy to announce the kickstarter project has begun. If you do web design or mobile design or development I have created a kit you need. I have been collecting glyph packs for some time and realized I needed a more complete set. So I worked with my top designer and created one.I tried to price it so everyone even entry level appeneurs would have a chance to dream big with great looking apps. This is the first in a series of iOs graphic. Here is the project I will be promoting:http://kck.st/NIW9V1...I hope you all enjoy, and share it with all the devs and designers you know.
5,790 Igniters

value: This website is a service used to organize online groups that host in-person and virtual events for people with similar interests. It was founded in 2002 by Chairman Scott Heiferman and four co-founders.


text:
Sylvan Learning Partners with College Prep Leader to Help Students Gain Admission to Their Contact Us
dansk	Deutsch	español	Français	italiano	Nederlands	norsk	português	suomeksi	svenska	Sylvan Learning Partners with College Prep Leader to Help Students Gain Admission to Their Top-Choice Colleges
from Sylvan Learning BALTIMORE, Sept. 19, 2013 /PRNewswire/ -- Sylvan Learning announced today that it has partnered with College Essay Organizer, a rapidly growing Web-based company focused on helping students gain admission to their top college choices.
With over 30 years of expertise and more than 800 locations across North America, Sylvan Learning is the leading provider of personal learning for students of all ages, grades, and skill levels. "We are expanding our college preparation services to help families navigate the complex college application process," says Jeffrey Cohen, Sylvan's Chief Executive Officer. "Our partnership with College Essay Organizer will enable students to write stronger essays and submit more compelling college applications. Our students are going to love how easy it is, and their parents are going to love the results." College Essay Organizer remains the only technology of its kind in today's booming college prep market. Dan Stern, Founder and President, developed College Essay Organizer five years ago, in partnership with A-List Education, to streamline the college essay process. The Website, an outgrowth of Stern's Manhattan-based tutoring and college prep company, Metro Academic Prep, instantly provides students with all of their essay questions for their selected colleges, including many essays for programs and scholarships not found on the applications or the Common App. The issue of students overlooking such essays and submitting incomplete applications has become a significant problem in recent years. College Essay Organizer exists to ensure that applicants avoid this misstep, and to show how essay questions across different schools share overlapping themes so students can write fewer essays but maintain high quality. "The goal," Stern says, "is to help students work smarter. If an applicant is considering just six colleges, which is low in today's competitive climate, she may be shocked to discover there are twenty or more essays to write, and it can be overwhelming to know how to begin. If the applicant can see how to write four essays that work for all twenty questions, she'll produce better-quality writing and get it done faster."
In addition to offering this automated essay tool, College Essay Organizer and Sylvan will also feature the new Expert Access webcast series, which allows students to listen to and interact with the nation's leading authorities on a range of college admissions topics. "As a parent of two high school students, I have a first-hand view of the challenges involved with the college application process," says Sylvan's Cohen. "And these innovative college application services will help more students get accepted to their first-choice colleges -- without having to spend a small fortune to make it happen."
To learn more, visit College Essay Organizer at http://collegeessayorganizer.com/sylvan1/
About Sylvan LearningSylvan Learning is the leading provider of tutoring to students of all ages, grades and skill levels with more than 30 years of experience and nearly 800 centers located throughout North America. Sylvan's trained and Sylvan-certified instructors provide personalized instruction in reading, writing, mathematics, study skills and test-prep for college entrance and state exams. Sylvan also hosts MomMinded.com, a blog offering tips and resources from moms and education experts. For more information, call 1-800-31-SUCCESS or visit www.SylvanLearning.com. About College Essay Organizer
A-List helps thousands of students, teachers and institutions throughout the world access solutions for higher education. In addition to providing direct instruction, A-List offers professional development aligned with Common Core State Standards for schools and nonprofits, extensive educational products like SAT/ACT preparation materials, and unique e-learning applications like VocabVideos.com.
www.alisteducation.com Media contact:Darshana Patel571-235-7238dpatel@latitudeworldwide.com
Preview: Sylvan Learning Announces Expansion In Boston
Sylvan Learning Launches International Expansion Initiative with...

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Patent US5879988 - Capacitor of a DRAM cell and method of making same - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsA stacked capacitor of a DRAM cell has an increased storage electrode without increasing the total area and fabrication complexity of the DRAM cell. By disposing the storage electrode of a memory capacitor on an especially made rugged stacked oxide layer, the area of the storage electrode is enlarged...http://www.google.com/patents/US5879988?utm_source=gb-gplus-sharePatent US5879988 - Capacitor of a DRAM cell and method of making sameAdvanced Patent SearchPublication numberUS5879988 APublication typeGrantApplication numberUS 08/661,912Publication dateMar 9, 1999Filing dateJun 12, 1996Priority dateJun 12, 1996Fee statusPaidPublication number08661912, 661912, US 5879988 A, US 5879988A, US-A-5879988, US5879988 A, US5879988AInventorsKuang-Chad Chen, Tuby TuOriginal AssigneeMosel Vitelic IncorporatedExport CitationBiBTeX, EndNote, RefManPatent Citations (6), Referenced by (6), Classifications (14), Legal Events (7) External Links: USPTO, USPTO Assignment, EspacenetCapacitor of a DRAM cell and method of making same
US 5879988 AAbstract
A stacked capacitor of a DRAM cell has an increased storage electrode without increasing the total area and fabrication complexity of the DRAM cell. By disposing the storage electrode of a memory capacitor on an especially made rugged stacked oxide layer, the area of the storage electrode is enlarged and thus provides the higher capacitance. Then, by removing the rugged stacked oxide layer to expose the rugged surface of the storage electrode, the capacitance of a memory capacitor is additionally increased after covering the whole rugged surface of a of the storage electrode with a dielectric film.
1. A method of fabricating a fin-shaped stacked memory capacitor of a DRAM cell, comprising the steps of:a) forming a field effect transistor and an isolation region of field oxide in the surface of a silicon substrate, in which the field effect transistor further comprises a gate electrode, source and drain regions, and a gate insulating film interposed therebetween; b) depositing an insulating layer on the resulting layer formed in step a) and then forming a bit line contact hole, connected to the source or drain region of the field effect transistor, by etching the insulating layer and the gate insulating film and forming a bit line by depositing a doped first polysilicon layer and then patterning the doped first polysilicon layer; c) depositing an etching protection layer over the exposed surface of the silicon substrate including the resulting structure formed in step b); d) depositing on the etching protection layer a first and lowest roughened stacked oxide layer comprising a lower layer of PE TEOS and an upper layer of O3 /TEOS, and then depositing on the first roughened stacked oxide layer a doped second polysilicon layer, a second roughened stacked oxide layer, a doped third polysilicon layer, and a third and uppermost roughened stacked oxide layer, and annealing before the deposit of the doped second and third polysilicon layers; e) forming a storage electrode contact hole by etching from the uppermost roughened stacked oxide layer to the surface of the drain or source region of the field effect transistor; f) depositing a doped fourth polysilicon layer on the uppermost roughened stacked oxide layer and in the contact hole, and then forming a memory capacitor pattern by etching from the doped fourth polysilicon layer to a surface of the lowest roughened stacked oxide layer; g) removing portions of the roughened stacked oxide layers to form a fin-shaped storage electrode of a memory capacitor; h) forming a dielectric layer on the fin-shaped storage electrode and then depositing a doped fifth polysilicon layer on the dielectric layer as a plate electrode of a memory capacitor. 2. A method of fabricating a stacked memory capacitor of a DRAM cell according to claim 1, wherein said insulating layer is made of phosphosilicate glass (PSG).
3. A method of fabricating a stacked memory capacitor of a DRAM cell according to claim 1, wherein said etching protection layer is made of Si3 N4.
4. A method of fabricating a stacked memory capacitor of a DRAM cell according to claim 1, wherein said dielectric layer is an ONO (Oxide-Nitride-Oxide) film formed by CVD.
5. A method of fabricating a stacked memory capacitor of a DRAM cell according to claim 1, wherein said dielectric layer is formed by a thermal oxidation of the doped polysilicon layer.
6. A method of fabricating a stacked memory capacitor of a DRAM cell comprising the steps of:a) forming a field effect transistor and an isolation region of field oxide in a surface of a silicon substrate, in which the field effect transistor further comprises a gate electrode, source and drain regions, and a gate insulating film interposed therebetween; b) depositing an insulating layer on the resulting structure formed in step a) and then forming a bit line contact hole, connected to the source or drain region of the field effect transistor by etching the insulating layer and the gate insulating film and forming a bit line by depositing a doped first polysilicon layer and then patterning the doped first polysilicon layer; c) depositing an etching protection layer over the exposed surface of the silicon substrate including the resulting structure formed in step b); d) depositing a roughened stacked oxide layer, comprising a lower layer of PE TEOS and an upper layer of O3 /TEOS on the etching protection on layer; e) forming a storage electrode contact hole, connected to the drain (or source) region of the field effect transistor, by etching the roughened stacked oxide layer, the etching protection layer, and the insulating layer; f) annealing the roughened stacked oxide layer and then depositing a doped second polysilicon layer on the roughened stacked oxide layer; g) forming a memory capacitor pattern by etching the doped polysilicon layer; h) removing a portion of the roughened stacked oxide layer to form a one fin storage electrode of a memory capacitor; i) forming a dielectric film on the one fin storage electrode, and then depositing a doped third polysilicon layer as a plate electrode of the memory capacitor. 7. A method of fabricating a stacked memory capacitor of a DRAM cell according to claim 6, wherein said insulating layer is made of phosphosilicate glass (PSG).
8. A method of fabricating a stacked memory capacitor of a DRAM cell according to claim 6, wherein said etching protection layer is made of Si3 N4.
9. A method of fabricating a stacked memory capacitor of a DRAM cell according to claim 6, wherein said dielectric layer is an ONO (Oxide-Nitride-Oxide) film formed by CVD.
10. A method of fabricating a stacked memory capacitor of a DRAM cell according to claim 6, wherein said dielectric layer is formed by a thermal oxidation of the doped polysilicon layer.
Recently, significant progress has been made in the field of semiconductor memory devices. In particular, in the case of a dynamic random access memory (to be referred to as a DRAM hereafter), various attempts have been made to provide a high integration density without degrading storage characteristics of the memory. Referring to FIG. 1, each DRAM cell comprises a single field effect transistor T and a single capacitor C. The field effect transistor T has one conduction terminal connected to the storage electrode of the capacitor C and another conduction terminal connected to a bit line BL. In addition, the field effect transistor T has a gate electrode connected to a word line WL. The capacitor C has its other electrode connected to ground. Many DRAM cells are are arranged in a matrix form to store a large quantity of information. At the time of writing data, since a predetermined pontential is applied to the word line WL so that the field effect transistor T is rendered conductive, a charge from the bit line BL is stored in the capacitor C.
On the other hand, at the time of reading out data, since a predetermined pontential is applied to the word line WL so that the field effect transistor T is rendered conductive, a charge stored in the capacitor is extracted through the bit line BL. Accordingly, information "0"and "1" is represented by electric charge and no charge (or alternatively, no charge and electric charge) on the storage electrode of the memory capacitor. During the reading cycle, the capacitor C also shares a charge with the bit line BL capacitance. The ratio of the two capacitances has to be high enough to ensure that the resultant voltage can be detected by the sense amplifier. Hence, it is expected that the capacitance of the capacitor should be raised as much as possible to improve the signal to noise (S/N) ratio of a DRAM cell while maintaining the same occupation area and complexity of fabrication as that of conventional art.
In general, the capacitor of a DRAM cell includes a storage electrode made up of a polysilicon layer, a plate electrode made up of a polysilicon layer, and a dielectric film made up of a stacked ONO(Oxide-Nitride-Oxide)layer. Although decreasing the thickness of a dielectric film can provide a method for increasing the capacitance of a capacitor, a dielectric film with decreased thickness lacks reliability since the number of defects such as pinholes increases, the yield thereof decreases and, in addition, the electric field strength applied to the dielectric film increases to cause a dielectric breakdown. Therefore, the dielectric film has a limited film thickness and thus enlarging the area of the storage electrode is another method of providing a higher capacitance. However, if the area of a memory capacitor is enlarged, the occupation area of the memory cell will be increased, resulting to a big obstacle in implementation of a highly integrated device with a large memory capacity.
Presently, in order to overcome such problems, a stacked memory capacitor or a trench memory capacitor is often used as a charge storage capacitor of a DRAM cell. For example, a trench memory capacitor is disclosed in U.S. Pat. Nos. 4,859,615 and 5,012,308. By disposing a polysilicon film on a "V" or "U" shaped trench formed on a silicon substrate, a trench memory capacitor raises its capacity without decreasing high packing density. However, the area and the depth of a trench are hard to control when a memory capacitor is further miniaturized, resulting in a serious problem of manufacturing with regard to the yield.
Recently, a DRAM cell having a so called fin-shaped stacked memory capacitor was disclosed in U.S. Pat. Nos. 5,126,810, 5,187,548 and 5,409,896. Compared to a trench memory capacitor, the fabrication of the fin-shaped stacked memory capacitor is more feasible.
Next, a briefly stated description will be given of a method of of producing a DRAM cell with a stacked memory capacitor having a plurality of fin-shaped parts, by referring to FIG. 2 through 9. As shown in FIG. 2, a field effect transistor T includes a source(or drain)region 5, a drain (or source) region 6 formed in the surface of a silicon substrate 1, a gate insulating film 3 such as SiO2 formed on the substrate, and and a gate electrode (that is a word line ) 41 laid over the gate insulating film 3. Meanwhile, a region of field oxide 2 adjacent to a memory capacitor is used to ensure that the cell has a good isolation between the adjacent memory capacitors , which prevents the cell information from being inverted, and is formed by so called "LOCOS", which is a method of a selective thermal oxidation of a silicon surface. Over the region of field oxide 2 is laid another wordline 42 connected to a gate of another cell transistor. Here, we do not specify whether the field effect transistor T is NMOS or PMOS since the two types of devices can each be adopted in a fin-shaped memory capacitor configuration.
Referring to FIG. 3, over the entire surface of a silicon substrate 1, an insulating layer 7 such as phosphosilicate glass (PSG) is deposited by a CVD method and followed by the standard photolithographic process, which involves forming a photoresist layer on the surface of a silicon substrate 1, exposing the photoresist through a mask and developing the photoresist layer. A process of reactive ion etching (RI E) is employed to remove the unnecessary Portion of the insulating layer 7. A gate insulating film 3, in which a bit line contact hole 7A, is connected to the source(or drain) region of the field effect transistor, is formed, and then a pattern of bit lines 12 is formed after depositing a polysilicon layer doped with a high concentration of impurities and then patterned using a photoresist pattern as a mask. Next, referring to FIG. 4, an etching protection layer such as Si3 N413 is deposited to preventing the insulating layer 7 from damage due to overetching of subsequently deposited layers. Then, a process of alternatively depositing an oxide layer and a doped polysilicon layer is performed, thereby forming a stacked layer structure of an oxide layer 14, a doped polysilicon layer 15, an oxide layer 16, a doped polysilicon layer 17 and an oxide layer 18 from bottom to top, as shown in FIG. 4. Meanwhile, the doped polysilicon layer 15,17 is made conductive by introducing the high concentration of impurities.
Referring to FIG. 5, a storage electrode contact hole 7B is formed by the standard photolithographic process, etching from the top oxide layer 18 to the surface of the drain(or source)region 6 of the field effect transistor T. A process of depositing a doped polysilicon layer 19 having low resistivity follows, as shown in FIG. 6. Next, after a photolithographic process and an etching from the top doped polysilicon layer 19 to the surface of the lowest oxide layer 14, a memory capacitor pattern is formed, as shown in FIG. 7. Referring to FIG. 8, an etching process for example, using hydrofluoric acid etchant, is employed to remove the oxide layers 14,17,18 and thus a storage electrode having three fin-shaped parts is formed, including the doped polysilicon layer 15,17, and 19. Meanwhile, the gates (i.e. word lines) remain undamaged due to the protection of the etching protection layer 13; otherwise such damage may occur due to the overetching of the insulating layer 7.
Next, referring to FIG. 9, a dielectric film 20 having a thickness of about 100Å A is formed to cover the whole exposed surface of the doped polysilicon layers 15,17,19 by a thermal oxidation carried out in an oxygen ambient or by depositing an ONO (Oxide-Nitride-Oxide) layer using a CVD method. Finally, a doped polysilicon layer 21 is formed to be used as a plate electrode of a memory capacitor and thus the structure of a memory capacitor is completed. Although such a fin-shaped stacked memory capacitor can increase its capacitance, this electric capacity is not high enough to meet the demands of high integration density, for example 10 mega DRAM, so that a need exists to provide a higher capacitance while maintaining the same occupation area of a memory capacitor as that of the conventional art.
Therefore, an object of the invention is to provide a method of remarkably increasing the capacitance of a memory capacitor while occupying the same area as that of conventional art.
Another object of the invention is to providing a higher integration density by increasing a capacitance of a memory capacitor having a smaller area, compared to the conventional art.
A method of forming a stacked capacitor according to the invention includes the following steps:
a) a step of forming a field effect transistor and an isolation region of field oxide in the surface of a silicon substrate; wherein the field effect transistor further comprises a gate electrode( i.e. a word line), source/drain regions, and a gate insulating film interposed therebetween.
b) a step of depositing an insulating layer such as Phosphosilicate glass (PSG) and then forming a bit line contact hole 7A, connected to the source (or drain) region of the field effect transistor, after etching the insulating layer and the gate insulating film using a photoresist pattern as a mask.
c) a step of forming a bit line by depositing a doped polysilicon layer and then patterned using a photoresist pattern as a mask.
d) a step of forming an etching protection layer.
e) a step of successively depositing a roughened stacked oxide layer, which comprises a lower layer of PE TEOS and an upper layer of O3 /TE OS, a doped polysilicon layer, a roughened stacked oxide layer, a doped polysilicon layer and a roughened stacked oxide layer and thus forming a stacked structure.
f) a step of forming a storage electrode contact hole by etching from the top rugged stacked oxide layer to the surface of the drain (or source)region of the field effect transistor using a photoresist pattern as a mask, and then depositing a doped polysilicon layer.
g) a step of forming a patterned memory capacitor by etching from the top doped polysilicon layer to the surface of the lowest roughened stacked oxide layer using a photoresist pattren as a mask.
h) a step of removing the roughened stacked oxide layers and thus forming a fin-shaped storage electrode of the memory capacitor.
i) a step of forming dielectric layer by a thermal oxidation of a doped polysilicon layer or depositing an insulating film of ONO, and then depositing a doped polysilicon layer as a plate electrode of a memory capacitor so that the memory capacitor is completed
FIGS. 2-9 are cross-sectional views showing sequential the steps of the processes for manufacturing conventional fin-shaped stacked memory capacitors.
FIG. 10 is an SEM picture of a conventional oxide layer and a polysilicon layer thereon.
FIG. 11 is an SEM picture of a roughened stacked oxide layer and a polysilicon layer thereon, according to the present invention.
FIG. 12 is a cross-sectional view showing the formation of a storage electrode of a one fin stacked memory capacitor accorrding to the invention.
FIG. 13 is a cross-sectional view of a completed one fin stacked memory capacitor according to the invention.
FIG. 14 is a cross-sectional view of a completed three fin stacked memory capacitor according to the invention.
The method of the present invention is based on a sequence of steps involving depositing an oxide layer by a plasma-enhanced chemical vapor deposition (PECVD) method and then depositing an oxide layer by a method of O3 /TEOS, in which the O3 gas is introduced to the vapor of a tetraethoxysilicate (abbreviated TEOS) solution and silicon dioxide is obtained after their chemical reactions. In this specification, the terms of "O3 /TEOS" or "TEOS" refers to the final product of oxide layers rather than their forming methods. As a result of the basic sequence the surface of the O3 /TEOS layer is constituted by many island structures, which can be proven by scaning electron microscopic (SEM) photography. The presence of the island structure contributes to increasing the area of a storage electrode if a polysilicon layer is deposited on the O3 /TEOS layer since the growing of the polysilicon layer follows the topography of the O3 /TEOS. Meanwhile, it is noted that beneath the O3 /TEOS is the PE TEOS layer so that roughening of the surface of the O3 /TEOS only occurs when it has a base layer of PE TE OS and that these two oxide layers constitute a so called "roughened stacked oxide layer" in this specification.
FIG. 11 is an SEM photograph of the stacked structure of a roughened stacked oxide layer and a polysilicon layer thereon, the surface of the polysilicon layer, positioned in the top layer of FIG. 11, is much more corrugated than that of the conventional stacked structure of an oxide layer and a polysilicon layer thereon, shown in FIG. 10 (it is noted that these two photographies have the same magnification). Besides, the same result can be obtained in the interface between the polysilicon layer and the O3 /TEOS, which can further enlarge the area of the storage electrode by removing the roughened stacked oxide layer, thus exposing the bottom surface of the storage electrode.
The roughened stacked oxide layer is also can be formed by the following method which includes: 1. depositing O3 /TEOS on a thermal oxide; 2. depositing O3 /TEOS on a PSG layer formed by the TEOS method; 3. depositing O3 /TEOS on a nitride layer formed by LPCVD or PECVD. Meanwhile, the best growing conditions of the roughened stacked oxide layer comprise a growing temperature of 300�-500� C., a presure of 200-760 Torr, and the ratio of the flowing rate of O3 to TEOS being larger than 8.
Most of the steps of manufacturing a stacked memory capacitor with a storage electrode having a plurality of fin-shaped parts according to the invention are the same as that of the conventional art, except for the following steps. More specifically, the oxide layers14,16,18 shown in the FIGS. 4, 5, 6,and 7, are replaced by the roughened stacked oxide layer. Also, since a short duration HF dip is employed to remove the particles and contamination, a step of annealing is necessary to densify the roughened stacked oxide layer for lowering the etching rate of the O3 /TEOS layer during HF etching, and thus the island structures of the surface of the rugged stacked oxide layer remain.
As is apparent in FIG. 14, which shows a completed three fin stacked capacitor according to the invention it is obvious that the storage electrode, consituted by three fin-shaped doped polysilicon layers15,17,19, has a much more corrugated surface 51 on its top and bottom surface than that of conventional art, shown in the FIG. 9.
Although the steps involved in forming a stacked memory capacitor with a storage electrode of one fin-shaped part according to the second preferred embodiment of the invention are much simpler than those of the first preferred embodiment, a description of the processes for manufacturing the one fin-shaped part of the stacked memory capacitor will be made hereinafter. Referring to the FIG. 12, a field effect transistor, composed of a gate electrode 4, source/drain (S/D) regions and a gate insulating film such as SiO2 interposed therebetween ,and a field oxide are formed in the surface of a silicon substrate 1 Next, an insulating layer 31, for example such as PSG, is deposited and a bit line contact hole is then formed by etching the insulating layer and the gate insulating film. Thereafter, a doped polysilicon layer is deposited and then patterned using a patterned phtorsist as a mask to form a bit line connected to the source region of the field effect transistor. Over the exposed surface of the silicon substrate 1 is deposited an etching protection layer 30 such as Si3 N4.
Subsequently, a process of forming a roughened stacked oxide layer 40, which comprises a lower layer of PE TEOS and an upper layer of O3 /TEOS, follows and then the whole wafer is subjected to an annealing to densify the roughened stacked oxide layer so that its corrugated surface is not damaged by the HF etchant, a necessary process prior to a deposition of a polysilicon layer to ensure cleanliness of the wafer.
Subsequently, a storage electrode contact hole, connected to the drain (or source) region of the field effect transistor, is formed after the standard photolithographic processes and etching the rugged stacked oxide layer40, the Si3 N4 30 layer, and the insulating layer 31. Next, a layer of doped polysilicon is deposited and patterned to form a storage electrode 50 of a memory capacitor using a photoresist pattern as a mask. As described in the foregoing, the step of annealing is necessary to densify the roughened stacked oxide layer and thus its corrugated surface can be protected. Then, the bottom corrugated surface is exposed after removing the roughened stacked oxide layer and followed by a process of thermal oxidation, or depositing an ONO layer, to form a dielectric film 60 of a memory capacitor. At last, a doped polysilicon layer is deposited and thus a whole memory capacitor is completed. As a result, several features that the conventional art can not achieve are obtained as follows:
1) Since the storage electrode formed on the roughened stacked oxide layer has a corrugated surface, the area of the storage electrode can be enlarged and the capacitance of the memory capacitor is increased thereby.
2) According to the invemtion, the holding characteristics of the memory capacitor are more reliable than that of the conventional art since the electric capacity is increased.
3) Compared to the conventional art, the invention has a higher capacitance while maintaining the same occupation area of a memory capacitor as that of the conventional art, thereby providing a higher integration density. Meanwhile, the complexity of fabrication is not increased, compared to the conventional art, and thus the processes of the invention are easily adapted to mass production.
Although the preferred embodiment of the invention has been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention, as recited in the accompanying claims.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5049517 *Nov 7, 1990Sep 17, 1991Micron Technology, Inc.Method for formation of a stacked capacitorUS5071783 *Jul 5, 1989Dec 10, 1991Fujitsu LimitedMultilayer; storage capacitor, stacked electroconductive filmUS5286668 *Feb 3, 1993Feb 15, 1994Industrial Technology Research InstituteLayers of doped and undoped polysilicon, dielectric layer and top electrode layer; etching with phosphoric acidUS5422295 *Dec 10, 1993Jun 6, 1995Samsung Electronics Co., Ltd.Method for forming a semiconductor memory device having a vertical multi-layered storage electrodeUS5622882 *Dec 30, 1994Apr 22, 1997Lsi Logic CorporationMethod of making a CMOS dynamic random-access memory (DRAM)US5661340 *Oct 26, 1993Aug 26, 1997Fujitsu LimitedDynamic random access memory having a stacked fin capacitor with reduced fin thickness* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS6008106 *Aug 21, 1997Dec 28, 1999Mosel Vitelic Inc.Micro-trench oxidation by using rough oxide mask for field isolationUS6103571 *Apr 30, 1998Aug 15, 2000Taiwan Semiconductor Manufacturing Company, Ltd.Method for forming a DRAM capacitor having improved capacitance and device formedUS7416954 *Jan 27, 2004Aug 26, 2008Intel CorporationEnhanced on-chip decoupling capacitors and method of making sameUS7709342 *Oct 21, 2005May 4, 2010Samsung Electronics Co., Ltd.Capacitor and method of manufacturing the sameUS7843036Aug 12, 2008Nov 30, 2010Intel CorporationEnhanced on-chip decoupling capacitors and method of making sameUS8124978Mar 12, 2010Feb 28, 2012Samsung Electronics Co., Ltd.Capacitor and method of manufacturing the same* Cited by examinerClassifications U.S. Classification438/254, 257/E21.648, 257/E21.015, 257/E21.012, 257/E21.013, 438/397International ClassificationH01L21/8242, H01L21/02Cooperative ClassificationH01L28/84, H01L27/10852, H01L28/86, H01L28/82European ClassificationH01L27/108M4B2, H01L28/82Legal EventsDateCodeEventDescriptionAug 22, 2011ASAssignmentEffective date: 20110804Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:PROMOS TECHNOLOGIES INC.;REEL/FRAME:026795/0164Owner name: CHANG LIAO HOLDINGS, LLC, DELAWARESep 24, 2010FPAYFee paymentYear of fee payment: 12Sep 24, 2010SULPSurcharge for late paymentYear of fee payment: 11Mar 15, 2006FPAYFee paymentYear of fee payment: 8May 24, 2004ASAssignmentOwner name: PROMOS TECHNOLOGIES INC., TAIWANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MOSEL VITELIC, INC.;REEL/FRAME:015334/0772Effective date: 20040427Owner name: PROMOS TECHNOLOGIES INC. 3F, NO.19, LI-HSIN ROAD SFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MOSEL VITELIC, INC. /AR;REEL/FRAME:015334/0772Aug 14, 2002FPAYFee paymentYear of fee payment: 4Jun 17, 1996ASAssignmentOwner name: MOSEL VITELIC INCORPORATED, TAIWANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:CHEN, KUANG-CHAO;TU, TUBY;REEL/FRAME:008045/0737Effective date: 19960524RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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Imagine a Forest: Designs and Inspirations for Enchanting Folk Art by Dinara Mirtalipova, Hardcover | Barnes & Noble® B&N Top 100 NY Times Bestsellers
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This guide offers folk designs that are an appealing combination of traditional and modern imagery. Self-taught professional designer Mirtalipova grew up in Uzbekistan, and her interpretation of the Ukrainian, Russian, and Uzbek folk art of her childhood is presented here in the form of a whimsical forest. Flowers, plants, insects, birds, people, houses, myths, and fairy tales are the motifs of the simple exercises. There are also chapters on decorative elements, lettering, and related projects. Many exercises include a brief mention of the symbolism behind the theme or the author's memories of her mother's or grandmother's use of similar representations. VERDICT People of all artistic skill levels can enjoy this guide, and parents, especially, may want to try the projects with their children.
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