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Ideas Unlimited - Company Introduct...
Mohammed Abdul Hafez, Business Development Manager at Total Technology
© Media Infotech –Business Solutions Media Infotech Business Solutions Ramallah – Industrial Zone Telephone: +970-2-2908597 Fax: ++970-2-2908597 P.O Box: 813 Email: info@mit.ps Website: http://www.mit.psDate: 2/4/2013 1 2.
© Media Infotech –Business Solutions About Media Infotech • IT Solutions Provider, offering specialised engagement in the area of Business Process Automation and Service Management. • Founded in 1998 – Ramallah - Palestine • Market Region: Middle-East • Services Offerings Include: • Business Integration System • Business Tracking / Reporting System • Workflow, Management Control & Contact Management • Business Process Management • DMS & Archiving Solutions • Management & IT Consulting & Business Management SupportDate: 2/4/2013 2 3.
© Media Infotech –Business Solutions Enterprise Software Solutions • Infotech - provides complete broad range of enterprise software. Our cost-effective quality products help our clients to generate revenue and operate efficiently. • Infotech - comprehensive solutions include Complete Document Management (EDMS) & Archiving Project Management , workflow management system, and other Management Systems used in government, and Portable Professional Business Video Conferencing Units.Date: 2/4/2013 3 4.
© Media Infotech –Business Solutions Groupware and Collaboration System Multilingual efficient teamwork systemDate: 2/4/2013 4 5.
© Media Infotech –Business Solutions Why should you choose ? • Cost effective (No hidden costs as special infrastructure / Man Power, …..). • Control (Executive Decision Making system / Reporting System/ Content Tracking System). • Confidentiality (Multi level security). • Friendly user (managed & direct by business managers). • Save running expenses (Money, Time, & Efforts).Date: 2/4/2013 5 6.
© Media Infotech –Business Solutions Online Team work CollaborationGeographically and structurally separated teams have the opportunity tocollaborate professionally and efficiently. The required infrastructure forcommunication, coordination and co-operation for the team will be provided byteamspace.Date: 2/4/2013 6 7.
© Media Infotech –Business Solutions How does work? is your virtual office: Employees The employees do not Office need an installation on All common data and information End users their workstation. They just are on the server. No special Locate , Search, access need internet access to use infrastruture , or deditcated IT from their workstation their virtual office. staff investment required. existing data and upload new data.Date: 2/4/2013 7 8.
© Media Infotech –Business Solutions Online Team work Collaboration Affiliate Branch Co. office HQ Provider Simply to exchange any kind of data with any information resources Client worldwide, under your control.Date: 2/4/2013 8 9.
© Media Infotech –Business Solutions functions Communication Coordination •E-Mail / Inrternal •Calendar messages •Contacts •Chat / Discussions •Project /Task Management •Notice Board •Reporting / Tracking •SMS System • Video conference •Resource Management (optional) Co-operation Control •Full document life cycle •Status Reports •Workflow Management •Team Reports •Time recording •Reminders •Feedback •System Protocol •Innovation Forum © 2009 5 POINT AG – Internet Business SolutionsDate: 2/4/2013 9 10.
© Media Infotech –Business Solutions Create your team and use it immediately! Administration 1. Create team space 4. Login and work Communication • E-Mail, Telegrams • Chat • Discussions • Notice Board • SMS 2. Set team space Coordination • Calendar • Resource Management • Contacts • Project Management • Reports Co-operation • File sharing 3. Add members • Creativity • Innovation Forum You and your team • Time Recording members can use the team space right away Control from any internet • Status Reports access all over the • Reminder world! The new members will be informed • System Protocols automatically via e-mail! • Team ReportsDate: 2/4/2013 10 11.
© Media Infotech –Business Solutions Addresses and Contact Management All important contacts can be managed centralized • Outlook and smart mobiles Synchronization with your office and home • Access for Web links, direct forwarding of e-mails and SMS • Generating address lists; import - and export functionsDate: 2/4/2013 11 12.
© Media Infotech –Business Solutions Addresses and Contact ManagementDate: 2/4/2013 12 13.
© Media Infotech –Business Solutions Enterprise Events Management Calendar Coordination of appointments in the team • Rights to change and view (private or public appointments, release of data, etc.) • complete MS Outlook, and smart mobiles Synchronization • Resource Management • Automatic Reminders via E-Mail & SMS • Recurring Appointments and Appointments during several daysDate: 2/4/2013 13 14.
© Media Infotech –Business Solutions Enterprise Events Management CalendarDate: 2/4/2013 14 15.
© Media Infotech –Business Solutions Files and Document Management & Archiving System • File sharing and exchange with detailed assignment of user rights and privileges • Automatic Archiving Option for ready Documents. • Edit documents online – use your storage capacity efficiently • Optimal clarity and control due to versioning • Easy upload via drag‘n‘drop • Full document life cycle. • Flexilble Efficient File Indexing • ISO 85091 - ISO 19005 1:2005 • ISO/TR-15801, ISO 15489-1:2001 • ISO 18509-2 - ISO 14721 • ISO 23081 - ISO 10646 - ASCII • ISO 6937; ISO 8859 • ISO 15489-1:2001Date: 2/4/2013 15 16.
© Media Infotech –Business Solutions Just Drag & Drop files into system as print screenDate: 2/4/2013 16 17.
© Media Infotech –Business Solutions myTeams Linking-up projects and teams • A member can be more than one team with different access to the same data. • comfortable usage of several teams • Individual teamspace access, referring to team data as well as personal dataDate: 2/4/2013 23 18.
© Media Infotech –Business Solutions Our References Our References BMW Group The BMW Group is an active teamspace client since 2001. BMW uses teamspace company-wide in the area of education and professional development of its employees. In this case teamspace offers a constant communication and interaction between the different working groups without the need for a personal meeting. The information exchange takes place in a consistent designed virtual room which is used especially for communication and co-operation. ABN AMRO Since 2004 the Dutch certification bank ABN AMRO is a teamspace customer. The bank uses teamspace as an Enterprise Portal as a consistent affiliation of an internet portal, a content management system and a complete teamspace server. Therefore the teamspace Enterprise Portal is on the one hand a platform for virtual co-operation of several teams and on the other hand a central and independent place for the exchange of information and communication for all employees, customers and partners.Date: 2/4/2013 25 19.
© Media Infotech –Business Solutions Our References Daimler AG The Daimler AG uses teamspace successfully as an Enterprise Portal since 2007. With this teamspace portal the concern structures and organizes its complete occupational field, preferentially the Mercedes Benz factory in Gaggenau. The responsible persons manage and deposit here i.e. articles of apprenticeship, revisions of statutes, applications, etc. As well as the announcement and preparation of advanced trainings, workshops and seminar are handled with this portal. Due to the high satisfaction of the factory in Gaggenau with the implementation of teamspace, the portal was extended to the corporate area career and family. EADS Deutschland GmbH EADS is a worldwide leading company in the aerospace industry, in the defense business and the related services. The EADS uses teamspace in the classic way for project planning and project handling. In this way the company i.e. displays EU projects with teamspace to guarantee a secure access of all required data and information from all over the world and at any time.Date: 2/4/2013 26 20.
© Media Infotech –Business Solutions Individual customers Individual designsDate: 2/4/2013 27 21.
© Media Infotech –Business SolutionsNew York StockExchange - NYSE You are in good company!Date: 2/4/2013 28 22.
© Media Infotech –Business Solutions Why should you choose ?Date: 2/4/2013 29 Recommended
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Now, affidavit along with map layout to curb rules violation | noida | Hindustan Times
Officials of the GDA’s town planning department said that from now, applicants who apply for clearance of map layouts will have to submit an affidavit along with the application.
noida Updated: Mar 03, 2019 03:17 IST
Officials said the step was taken to curb commercial activities in residential areas.sakib ali/ht file(HT File)
The Ghaziabad development authority (GDA) has made it mandatory for applicants applying for clearance of map layouts of their buildings to submit an affidavit stating that they will not deviate from the purpose for which the layout is required. Officials said the step was taken to curb commercial activities in residential areas.
They added that construction on plots up to 100 square metres in the old Abadi (old city) area do not require map layout approval.
“Rest all residential construction requires approval of map layout. The condition of submitting an affidavit has been put in as people use residential premises for commercial activities, violating norms. If an applicant deviates from the intended purpose of usage after an affidavit is submitted, the authority will seal the premises,” Ishtiyaq Ahmad, the authority’s chief architect & town planner, said.
“The directions have been issued by the GDA vice chairperson, to be put into force immediate effect. It is intended to curb commercial activities in residential areas,” he added.
The issue of commercial operations in residential areas is a common instance in Ghaziabad.
Earlier, in September, 2013, the Allahabad High Court, in an order on a petition, had directed the Ghaziabad authority to seal all buildings or shops, including banks, private schools and nursing homes, among others, which were found running commercial operations on land earmarked for residential use.
The authority had later ordered for a survey and had found out about 8,500 instances of violations across the city. However, the intended action could not materialise.
Recently, the federation of association of apartment owners’ (Fed-AOA) of Indirapuram had moved a public interest litigation in the Allahabad High Court which had contended action against at least 1,494 of such commercial establishments running in residential areas of Indirapuram.
However, a drive against nearly 35 shops was initiated but was stopped as shop owners submitted affidavits that they will comply with land use norms.
“The GDA has provisions available through different court orders and as well as under the provisions of the Uttar Pradesh Urban Planning & Development Act to take action against erring instances. However, there has hardly been any action done to get rid of erring activities which have prevailed over years,” Alok Kumar, president, Indirapuram Fed-AOA, said.
First Published: Mar 03, 2019 03:17 IST

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Patent US7163017 - Polysilicon etch useful during the manufacture of a semiconductor device - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsA method for etching a polysilicon layer comprises the steps of providing a semiconductor wafer substrate assembly having at least first and second features therein in spaced relation to each other which define an opening therebetween. A blanket polysilicon is formed over the wafer assembly and within...http://www.google.com/patents/US7163017?utm_source=gb-gplus-sharePatent US7163017 - Polysilicon etch useful during the manufacture of a semiconductor deviceAdvanced Patent SearchTry the new Google Patents, with machine-classified Google Scholar results, and Japanese and South Korean patents.Publication numberUS7163017 B2Publication typeGrantApplication numberUS 10/829,061Publication dateJan 16, 2007Filing dateApr 20, 2004Priority dateDec 10, 1999Fee statusLapsedAlso published asUS6722376, US20030019831, US20040203243Publication number10829061, 829061, US 7163017 B2, US 7163017B2, US-B2-7163017, US7163017 B2, US7163017B2InventorsDavid J. KellerOriginal AssigneeMicron Technology, Inc.Export CitationBiBTeX, EndNote, RefManPatent Citations (19), Classifications (17), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetPolysilicon etch useful during the manufacture of a semiconductor device
US 7163017 B2Abstract
A method for etching a polysilicon layer comprises the steps of providing a semiconductor wafer substrate assembly having at least first and second features therein in spaced relation to each other which define an opening therebetween. A blanket polysilicon is formed over the wafer assembly and within the opening. A patterned photoresist layer is formed over the polysilicon layer, then the polysilicon layer within the opening is etched with a first etch. Subsequent to the first etch, the polysilicon with the opening is etched with a second etch comprising a halogen-containing gas flow rate of from about 35 sccm to about 65 sccm and an oxygen-containing gas (for example He—O2) flow rate of from about 12 sccm to about 15.6 sccm.
1. A method used to etch a conductive layer to result in a selected profile of the conductive layer, comprising:
forming a conductive layer over the semiconductor wafer;
etching through the conductive layer to expose the semiconductor wafer substrate assembly on first and second sides of the conductive layer and to form first and second vertically-oriented cross-sectional sidewalls, each sidewall comprising a lower portion and an upper portion continuous with the lower portion, with the upper portion being further away from the wafer than the lower portion;
selecting a post-etch profile from first and second post-etch profiles, wherein:
the first post-etch profile results from an etch which removes the lower portion of each sidewall of the conductive layer at a faster rate than it removes the upper portion to result in a substantially U-shaped profile of the conductive layer; and
the second post-etch profile results from an etch which removes the lower portion of each sidewall of the conductive layer at a faster rate than it removes the upper portion to result in the conductive layer having a profile which tapers inward at a uniform rate from the upper sidewall portion to the lower sidewall portion; then
etching the conductive layer using an etch comprising a flow rate of between about 9 sccm and about 12 sccm He—O2 to result in the conductive layer having the selected post-etch profile,
wherein the He—O2 flow rate is about 9 sccm to result in the conductive layer having the first profile; and
wherein the He—O2 flow rate is about 12 sccm to result in the conductive layer having the second profile.
2. The method of claim 1 wherein the etch of the conductive layer further comprises:
a flow rate of 50 sccm HBr;
a flow rate of an additional 100 sccm He;
a bias power of 70 watts;
a TCP power of 350 watts; and
a pressure of 60 mTorr.
3. The method of claim 1 further comprising forming a polysilicon layer during the formation of the conductive layer.
4. A method used during the formation of a semiconductor device, comprising:
forming a blanket conductive layer over the semiconductor wafer;
forming a silicide layer on the conductive layer;
forming a dielectric layer on the silicide layer;
etching the dielectric layer, the silicide layer, and completely through the blanket conductive layer at locations uncovered by an etch mask to expose the semiconductor wafer substrate assembly on first and second sides of the conductive layer and to form first and second sidewalls, wherein each sidewall is defined by the conductive layer, the silicide layer, and the dielectric layer, and wherein a lower portion of each conductive layer sidewall is closer to the semiconductor wafer than an upper portion of each conductive layer sidewall;
the first post-etch profile results from an etch which removes the lower portion of the conductive layer sidewall at a faster rate than it removes the upper portion of the conductive layer sidewall to result in a substantially U-shaped profile of the conductive layer; and
the second post-etch profile results from an etch which removes the lower portion of the conductive layer sidewalls at a faster rate than it removes the upper portion of the conductive layer sidewalls to result in the conductive layer having a profile which tapers inward at a uniform rate from the upper sidewall portion to the lower sidewall portion; then
with the silicide layer on the conductive layer and the dielectric layer on the silicide layer, etching the conductive layer using an etch comprising a flow rate of between about 9 sccm and about 12 sccm He—O2 to result in the conductive layer having the selected post-etch profile,
5. The method of claim 4 wherein the etch of the conductive layer further comprises:
6. The method of claim 4 wherein the conductive layer is polysilicon.
7. The method of claim 6 wherein the dielectric layer is nitride.
8. The method of claim 1 further comprising etching the conductive layer using an etch comprising a flow rate of about 6 sccm He—O2 to form the first and second vertically-oriented cross-sectional sidewalls.
9. The method of claim 4 further comprising etching the conductive layer using an etch comprising a flow rate of about 6 sccm He—O2 to form the first and second sidewalls.
This is a division of U.S. Ser. No. 09/458,875, filed Dec. 10, 1999 and issued Apr. 20, 2004 as U.S. Pat. No. 6,722,376.
This invention relates to the field of semiconductor assembly, and more specifically to a polysilicon etch which is particularly useful for removing polysilicon stringers.
During the manufacture of semiconductor devices such as dynamic random access memories (DRAMs), static random access memories (SRAMs), microprocessors, logic, etc., several structures are commonly formed. With reference to FIG. 1, a semiconductor wafer substrate assembly 10 is provided. The wafer assembly typically comprises a semiconductor wafer 12 having a transistor stack 14 formed thereon. With current technology, for example a 64 megabit DRAM manufactured with 0.18-micron line widths, each wafer stack comprises gate oxide 16 about 60 angstroms (Å) thick, a polysilicon control gate (word line) 18 about 800 Å thick, a silicide layer 20 about 1,000 Å thick, a nitride cap 22 about 2,000 Å thick, and a pair of oxide spacers 24. The spacing between each stack (between adjacent spacers) is about 1,300 Å. Such a structure is easily manufactured by one of ordinary skill in the art.
FIG. 1 further depicts a doped blanket polysilicon layer 26, for example about 3,500 Å thick which is provided to form a landing pad for a contact. A patterned photoresist mask 28 is formed over the polysilicon layer 26 and an anisotropic polysilicon etch is performed to define the landing pad. To etch the polysilicon layer depicted, a conventional etch comprises 90 standard cubic centimeters (sccm) Cl2 and 10 sccm NF3 at a pressure of 300 millitorr (mTorr) and 100 watts power to clear the majority of the exposed polysilicon, then the pressure is increased and SF6 is added toward the end of the etch in an attempt to clear any residual material from the exposed regions.
A desired resulting structure is depicted in FIG. 2 which depicts a clean removal of the exposed polysilicon and no undercutting of the resist. However, with severe topology having narrow spaces between the relatively high transistor gate stacks, a more common result is depicted in FIG. 3. Stringers 30 can form in the recesses as it is difficult to clear all the polysilicon from narrow, deep spaces found with high-density semiconductor devices, even with the increase in pressure and addition of SF6 in the conventional etch described above. Stringers, which form especially in corners, are well known in the art to cause shorting and result in malfunctioning semiconductor devices.
Another method used in an attempt to reduce stringers includes performing a series of alternating anisotropic and isotropic etches, with the anisotropic etches removing the polysilicon in a substantially vertical direction and the isotropic etches removing the polysilicon in both horizontal and vertical directions. One problem with this method is that the isotropic etches undercut the photoresist 28 and narrow the width of the polysilicon feature 26. Thus the critical dimension (CD) of the polysilicon feature is wider than would be required if the photoresist was not undercut, and thus the alignment tolerance is reduced. For example, with a device using 0.18 micron line widths a typical undercut is about 0.03 microns on each side (0.06 microns total). Thus the feature must be patterned for a 30% undercut tolerance. The additional space required for this allowance is a concern especially as the number of features on the device increases.
As device generations progress, the spaces between transistor stacks will decrease thereby exacerbating the problem of remaining stringers. A method which removes polysilicon, and particularly which removes stringers from severe topology, would be desirable.
The present invention provides a new method which reduces problems associated with the manufacture of semiconductor devices, particularly problems associated with etching polysilicon in narrow, deep openings associated with severe topology. In accordance with one embodiment of the invention, a semiconductor wafer substrate assembly is provided having adjacent structures which form an opening such as a trench or recess. A layer of polysilicon is formed over the wafer substrate assembly and within the opening, and a patterned photoresist layer is formed over the blanket polysilicon. An etch is performed using one of several embodiments of an inventive etch described in detail below. The inventive etch improves removal of the polysilicon from the opening and reduces the likelihood of stringers remaining after the etch.
FIG. 1 is a cross section depicting a wafer substrate assembly having a polysilicon layer and a photoresist layer formed thereover;
FIG. 2 is a cross section depicting the FIG. 1 structure after a polysilicon etch with desirable results;
FIG. 3 is a cross section depicting the FIG. 1 structure after a polysilicon etch after which polysilicon stringers remain;
FIG. 4 is a cross section depicting generally benign etching of the polysilicon feature with one embodiment of the inventive etch; and
FIGS. 5–7 are cross sections depicting results from using low, medium, and high flow rates respectively of an oxygen-containing gas.
An embodiment of the instant invention comprises an etch suitable for etching polysilicon and which is particularly useful for removing polysilicon from deep, narrow openings with minimal removal of oxides and nitrides.
A first inventive etch embodiment comprises the combination of a halogen-containing gas, for example Br, HBr, CF4, NF3, Cl2, or HCl, and an oxygen-containing gas, for example O2 or He—O2 in an etcher which is top and bottom powered or modified to be top and bottom powered. Various other similar gasses may function sufficiently, and suitable high-density etchers include an Applied Materials DPS or HDP, a LAM model 9400 or TCP, or other such etchers.
Various etcher settings and gas flow rates provide different results which can be optimized for specific processes. The settings discussed below provide settings optimized for a process to etch the polysilicon 26 of FIG. 1 to result in a structure similar to FIG. 2, having reduced (or eliminated) stringers when compared with conventional etches. Other applicable parameters relative to FIG. 1 for this embodiment include a gate stack 14 height (from the top surface of wafer 12 to top of nitride 22) of between about 2,500 Å and about 3,000 Å, a polysilicon layer 26 thickness of between about 3,500 Å and about 4,000 Å, and a distance between adjacent spacers of about 1,300 Å.
To etch the polysilicon layer, a pressure of between about 42 mTorr and about 78 mTorr, an upper (TCP) power of from about 245 watts to about 455 watts, and a lower (bias) power of from about 49 watts to about 91 watts would provide sufficient etch results. More preferably, the pressure will be in the range of about 54 mTorr to about 66 mTorr, the top power will be in the range of about 315 watts to about 345 watts, and the lower power will be in the range of about 63 watts to about 77 watts. Most preferably, the pressure will be about 60 mTorr, the upper power will be about 350 watts, and the lower power will be about 70 watts. Generally, a lower pressure will provide a more vertical anisotropic etch (more etching of the horizontal bottom of the opening) and a higher pressure will provide a more isotropic etch. Also, as the top power increases the etch will become more isotropic and as bottom power increases the etch will become more anisotropic.
The flow rate of the halogen-containing gas is preferably in the range of about 35 standard cubic centimeters (sccm) to about 65 sccm, more preferably in the range of about 45 sccm to about 55 sccm, and most preferably about 50 sccm. The oxygen flow rate of the oxygen-containing gas is preferably in the range of about 1.9 sccm to about 4.7 sccm, more preferably between about 2.4 sccm and about 4.0 sccm, and most preferably between about 2.7 sccm and about 3.6 sccm. The total flow rate of the oxygen-containing gas can easily be determined by one of ordinary skill in the art. As an example, using He—O2 as the oxygen-containing gas, the total flow rate of the He—O2 (helium and oxygen components) is preferably in the range of about 6.3 sccm to about 15.6 sccm, more preferably between about 8.1 sccm and about 13.2 sccm, and most preferably between about 9 sccm and about 12 sccm, as the He—O2 gas comprises 30% oxygen and 70% helium. Using the preferred settings described above, the polysilicon will be etched at a rate of between about 1,000 Å/min and about 2,000 Å/min.
The amount of polysilicon etched toward the bottom of the opening varies proportionally with the amount (flow rate) of oxygen-containing gas. Thus if relatively little oxygen-containing gas is introduced into the etch chamber, the polysilicon is etched at about the same rate along the entire height of the feature thereby providing a substantially vertical anisotropic etch. With increasing proportions of oxygen-containing gas the etch becomes more isotropic and etches an increasing percentage of polysilicon from the bottom of the feature. FIG. 2 depicts a structure resulting from an etch of the FIG. 1 device with an inventive etch having a flow rate of oxygen-containing gas in the lower ranges of those specified above. In especially narrow regions, this etch may leave polysilicon in the corners of the features, for example between the bottom of oxide spacer 24 and the bottom of the opening defined by the top of the wafer which form a 90° angle in FIG. 2. Increasing the proportion of oxygen-containing gas will more effectively remove the polysilicon from the narrow regions. However, especially high proportions of oxygen-containing gas, especially in combination with top power in the higher range, may result in the structure of FIG. 4 wherein the polysilicon feature 26 being etched is undercut 40. As this etch is particularly selective to oxide and nitride, such an undercut is relatively benign. The feature 26 is not narrowed and the critical dimension does not need to be altered. Further, the polysilicon which is removed to leave undercut 40 will be filled in by a dielectric provided during subsequent processing. With increased doping of the polysilicon, the etch will result in additional undercut.
In another embodiment of the invention, the oxygen flow rate of the oxygen-containing gas can remain low (for example, from about 1.9 sccm to about 2.7 sccm) during the first part of the etch then increased (for example, from about 3.6 sccm to about 4.7 sccm) toward the end of the etch. Further, the top power can remain in the lower ranges (for example, from about 245 to about 315 watts) during the first part of the etch, then increased (for example, from about 385 to about 455 watts) toward the end of the etch. This embodiment would allow for stringer removal with minimal undercutting and therefore minimal removal of the polysilicon feature being formed.
With the various embodiments described above a polymer can form as the etch progresses. Polymers are well known in the art to form especially on vertical surfaces during etching. In another embodiment of the invention, the etch further comprises the use of helium at a flow rate of between about 70 sccm and 130 sccm, preferably between about 90 sccm and 110 sccm, and most preferably about 100 sccm, introduced into the etch chamber with the halogen-containing gas and the oxygen-containing gas. Adding helium reduces the build-up of polymer in the center of the wafer and prevents the etch from shutting down in the center of the wafer.
The etch is believed to remove more material at the bottom of a polysilicon feature (at a location proximal to the semiconductor wafer) than at the top (at a location distal to the wafer) under certain conditions described above as a result of “charging” which causes the ions to bend into the stringers. This is in contrast to conventional stringer etches which use high pressures to scatter the ions into the stringers resulting from collisions between ions. These conventional etches are somewhat uncontrollable as they use high energy ions to “erode” the undesirable material, which also erodes the desirable material the ions contact. The inventive etch is highly selective to oxide and thereby provides good polysilicon removal with little oxide or nitride removal, even during an extended over-etch. It is estimated that a polysilicon:oxide etch rate of between about 50:1 and about 150:1 can be achieved with the various embodiments of the invention as described above. Increasing the flow rate of the oxygen-containing gas (specifically the oxygen component) increases the undercut (or “nip”) of the polysilicon and also increases the selectivity to oxide and nitride. Thus an etch with a higher oxygen flow rate etches a lower portion of the feature at a faster isotropic rate than it etches an upper portion.
FIGS. 5–7 depict etch results on test wafers which can be expected with increasing flow rates of He—O2. Similar results can be obtained with other oxygen-containing gasses. Each of FIGS. 5–7 comprise the use of a silicon wafer having blanket layers of polysilicon about 900 Å thick, a silicide layer about 1,000 Å thick overlying the polysilicon, a nitride layer about 1,500 Å thick overlying the silicide layer, and a patterned photoresist layer (not depicted) thereover. The photoresist is patterned to form features each having a width of 1,500 Å and a pitch of 3,000 Å. The nitride and silicide are both etched using conventional etches. For example, a nitride etch can comprise the use of 50 sccm CF4, 50 sccm He, and 35 sccm CH2F2 at a pressure of 10 mTorr, an upper power of 700 watts, a lower power of 250 watts for a duration of 60 seconds. The silicide etch can comprise 75 sccm Cl2 and 25 sccm CF4 at a pressure of 4 mTorr, an upper power of 250 watts, a lower power of 75 watts for a duration of 50 seconds. Further, as the etch of the test wafers is performed to depict the change in isotropic etching which results from increasing the flow rate of the oxygen-containing gas, the polysilicon is first anisotropically etched to result in a vertical profile. An exemplary polysilicon etch comprises the use of 40 sccm Cl2, 6 sccm He—O2, and 180 sccm HBr at a pressure of 20 mTorr, an upper power of 160 watts, a lower power of 30 watts, for a duration of 30 seconds.
FIG. 5 depicts an etch using a flow rate of 6 sccm He—O2, 50 sccm HBr, 100 sccm He, 70 watts lower power, 350 watts upper power, a pressure of 60 mTorr, and a duration of 60 seconds. The resulting etch provides little or no lateral etching or undercutting of the polysilicon 50, the silicide 52, or the nitride 54. This etch would, however, etch polysilicon in a vertical direction and would provide an inventive substitute for the exemplary polysilicon etch described in the previous paragraph. Thus the need for the 30% undercut tolerance described above is reduced or eliminated and a smaller device with increased feature density can be formed.
FIG. 6 depicts an etch using a flow rate of 9 sccm He—O2, 50 sccm HBr, 100 sccm He, 70 watts lower power, 350 watts upper power, a pressure of 60 mTorr, and a duration of 60 seconds. The resulting etch undercuts the polysilicon 60, especially toward the bottom of the feature. The upper portion of the polysilicon 60 remains substantially vertical. This etch removes the polysilicon at a faster isotropic rate than the etch described with reference to FIG. 5.
FIG. 7 depicts an etch using a flow rate of 12 sccm He—O2, 50 sccm HBr, 100 sccm He, 70 watts lower power, 350 watts upper power, a pressure of 60 mTorr, and a duration of 60 seconds. The resulting etch removes the polysilicon 60 along the entire height of the feature.
As is depicted in FIGS. 5–7, increasing the oxygen-containing etchant, for example the He—O2 described, results in an increasingly retrograde etch profile. The etch profiles depicted in FIGS. 5–7 are generally homogeneous across a wafer with stacks at the edge of the wafer having etch rates and profiles similar to those at the center of the wafer or at any other wafer location. Also, the amount of undercut will increase with increased doping of the blanket polysilicon layer.
An embodiment of the etch can be used after a conventional etch, with the conventional etch removing the majority of exposed polysilicon, and the inventive etch used to remove any remaining undesirable polysilicon such as stringers from particularly small spaces.
A semiconductor assembly formed in accordance with the invention can be attached along with other devices to a printed circuit board, for example to a computer motherboard or as a part of a memory module used in a personal computer, a minicomputer, or a mainframe. A device formed in accordance with the invention could further be useful in other electronic devices related to telecommunications, the automobile industry, semiconductor test and manufacturing equipment, consumer electronics, and virtually any consumer or industrial electronic equipment.
While this invention has been described with reference to illustrative embodiments, this description is not meant to be construed in a limiting sense. Various modifications of the illustrative embodiments, as well as additional embodiments of the invention, will be apparent to persons skilled in the art upon reference to this description. For example, the various etch parameters can be easily modified by one of ordinary skill in the art for high density etchers other than the models described. It is therefore contemplated that the appended claims will cover any such modifications or embodiments as fall within the true scope of the invention.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS4818334Mar 15, 1988Apr 4, 1989General Electric CompanyMethod of etching a layer including polysiliconUS5030590Jun 9, 1989Jul 9, 1991Applied Materials, Inc.Process for etching polysilicon layer in formation of integrated circuit structureUS5118384 *Dec 10, 1991Jun 2, 1992International Business Machines CorporationReactive ion etching buffer maskUS5147499Jul 24, 1991Sep 15, 1992Applied Materials, Inc.Process for removal of residues remaining after etching polysilicon layer in formation of integrated circuit structureUS5192702 *Dec 23, 1991Mar 9, 1993Industrial Technology Research InstituteSelf-aligned cylindrical stacked capacitor DRAM cellUS5228950Dec 4, 1990Jul 20, 1993Applied Materials, Inc.Dry process for removal of undesirable oxide and/or silicon residues from semiconductor wafer after processingUS5652170 *Jan 22, 1996Jul 29, 1997Micron Technology, Inc.Method for etching sloped contact openings in polysiliconUS5691246 *May 13, 1993Nov 25, 1997Micron Technology, Inc.In situ etch process for insulating and conductive materialsUS5723893 *May 28, 1996Mar 3, 1998Taiwan Semiconductor Manufacturing Company, Ltd.Method for fabricating double silicide gate electrode structures on CMOS-field effect transistorsUS5792708Mar 6, 1996Aug 11, 1998Chartered Semiconductor Manufacturing Pte Ltd.Method for forming residue free patterned polysilicon layers upon high step height integrated circuit substratesUS5807789 *Mar 20, 1997Sep 15, 1998Taiwan Semiconductor Manufacturing, Co., Ltd.Method for forming a shallow trench with tapered profile and round corners for the application of shallow trench isolation (STI)US5854137 *Apr 29, 1996Dec 29, 1998Taiwan Semiconductor Manufacturing Company, Ltd.Method for reduction of polycide residuesUS5948703 *Jun 8, 1998Sep 7, 1999Advanced Micro Devices, Inc.Method of soft-landing gate etching to prevent gate oxide damageUS5976769Jul 12, 1996Nov 2, 1999Texas Instruments IncorporatedIntermediate layer lithographyUS6001688Dec 8, 1997Dec 14, 1999Advanced Micro Devices, Inc.Method of eliminating poly stringer in a memory deviceUS6037266 *Sep 28, 1998Mar 14, 2000Taiwan Semiconductor Manufacturing CompanyMethod for patterning a polysilicon gate with a thin gate oxide in a polysilicon etcherUS6140218 *Jun 10, 1999Oct 31, 2000Taiwan Semiconductor Manufacturing CompanyMethod for fabricating a T-shaped hard mask/conductor profile to improve self-aligned contact isolationUS6153465 *Jan 20, 1998Nov 28, 2000United Microelectronics Corp.Method of fabricating a capacitor of dynamic random access memoryUS6156629 *Oct 1, 1998Dec 5, 2000Taiwan Semiconductor Manufacturing CompanyMethod for patterning a polysilicon gate in deep submicron technology* Cited by examinerClassifications U.S. Classification134/1.2, 438/725, 257/E21.582, 438/714, 438/719, 257/E21.312, 438/734International ClassificationH01L21/302, H01L21/768, B08B6/00, H01L21/3213, H01L21/461, C23F1/00Cooperative ClassificationH01L21/76838, H01L21/32137European ClassificationH01L21/3213C4B2, H01L21/768CLegal EventsDateCodeEventDescriptionJun 16, 2010FPAYFee paymentYear of fee payment: 4Aug 29, 2014REMIMaintenance fee reminder mailedJan 16, 2015LAPSLapse for failure to pay maintenance feesMar 10, 2015FPExpired due to failure to pay maintenance feeEffective date: 20150116RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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Tourre a Foot Soldier in Wall Street Army: Cohan - Bloomberg For more local news from India, visit Bloombergquint.com Bloomberg the Company & Its ProductsBloomberg Anywhere Remote LoginBloomberg Anywhere LoginBloomberg Terminal Demo Request Bloomberg
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The Garden Grocery: Food Safety & S...
Develop a winning Super Bowl “food game plan” by thinking like a football player on the playing field. Only, instead of the opposing team, your field is filled with food and refreshments. Here are eight winning strategies.
Extension Educator at University of Nebraska-Lincoln
Try 'refreshing' your view if this doesn't look right on first viewing. It should download just fine, however.
Reprinted from The Nebline, January 2012 Know how. Know now. Your Super Bowl Game Plan for Healthy Eating Catherine, www.flickr.com/dunawayalt makipapa, www.flickr.com/makipapaBrian Vargas, www.flickr.com/ardvaark • Go in knowing what you will eat. serve so you can enjoy goodies later For example, choose to have the without guilt. three choices you will enjoy the most. You don’t have to eat some of 5. AVOID PENALTIES everything just because it’s there. • Avoid later weight penalties from too Alice Henneman, MS, RD many calories by choosing smaller UNL Extension Educator 2. SIZE UP THE OPPONENT portions. • Look at the stats on different foods. • Don’t let anyone get a penalty for Super Bowl Sunday is the second- Check for a Nutrition Label that tells drinking and driving. Remind your largest day for U.S. food consumption, how many calories per serving. guests to have a designated driver after Thanksgiving Day, according to • Eat food from a plate versus directly and offer alcohol-free beverages. Wikipedia. from a bag or box so you’re not Develop a winning Super Bowl blindsided by the amount you’re 6. KEEP YOURSELF IN “food game plan” by thinking like a consuming. THE GAME football player on the playing field. Don’t get taken out of the game Only, instead of the opposing team, 3. GET IN CONDITION because of food poisoning: your field is filled with food and • Lift a weight — other than your • Follow the “two-hour rule.” Leaving refreshments. Here are eight winning own, preferably at least twice a week! perishable food at room tempera- strategies: Take walks to whittle your waistline. ture more than two hours is a big The sooner you start, the greater the mistake. 1. HAVE A GAME PLAN benefits. Physical activity and added When food sits out for more than Plan a successful defense against muscle boost your metabolism and two hours, bacteria can easily mul- food that is excessive in fat and burn calories. tiply and cause foodborne illness. calories: Set out small amounts of perishable • Equip yourself — include some 4. WATCH WHAT YOU foods and replace those with clean lower-calorie drinks and munchies. EAT BEFORE THE GAME plates of food within two hours. • Position yourself away from heaping • Resist overloading on calories before platters. the game. Keep a few calories in re- Continued on next page Extension is a Division of the Institute of Agriculture and Natural Resources at the University of Nebraska–Lincoln cooperating with the Counties and the United States Department of Agriculture. ® Extension’s educational programs abide with the nondiscrimination policies of the University of Nebraska–Lincoln and the United States Department of Agriculture.
from preceeding page Need a quick dip recipe for Super Bowl Sunday? How about a dip that doubles as a nutritious snack or perhaps ... • Or, keep hot foods hot (140°F or hotter) with even a mini-meal? Enjoy these dip recipes made from items chafing dishes, slow cookers, and warming trays. commonly found in your fridge or cupboards. They’re filled Cold foods should be held at 40°F or colder. with nutrient-rich foods such as beans, fish, cheese, and salsa. Keep foods cold by nesting dishes in bowls of ice Serve with vegetables and whole grain chips or cracker dippers. or using party trays filled with ice. Pinto Bean Salsa Dip 1 can (approx. 15 oz.) pinto beans, drained and rinsed or 1-1/2 cups cooked dried beansMark Botham, www.flickr.com/beefy_n1 1 cup shredded cheese 1/2 to 1 cup chunky salsa 1 to 2 tablespoons chopped onion (optional) 1/4 to 1/2 teaspoon chili powder or to taste (optional) Mash beans with a Laura Gilmore, www.flickr.com/genbug fork. Mix in cheese. Stir 7. KEEP ADVANCING TOWARD THE in enough salsa until GOAL LINE mixture • Pace yourself by alternating between higher and is desired lower calorie foods. consistency • Make a successful passing play by bypassing sec- for dipping. onds at the buffet table — or take half as much Add onion the second time around. and seasoning as desired. Serve cold or cook, stirring, • Take an occasional time-out to put a halt in your over medium heat until the cheese melts and the mix- eating. ture is well blended and hot (about 5 minutes). Tuna Veggie Dip 1 can (approx. 6 oz.) water-packed tuna, drained 1 stalk celery, chopped fine 1 medium carrot, chopped fine 4 to 6 tablespoons lower fat mayonnaise 1 teaspoon Italian seasoning or to taste 1/8 teaspoon black pepper brittany, www.flickr.com/brittany0177 Mix ingredients until well blended with sufficient mayonnaise until desired consistency is obtained. 8. TOUCHDOWN! • Plan an effective running (or walking) condi- tioning strategy — by-“pass” excessive food intakes and avoid penalties which keep you from moving toward the goal line — and you’ll score a successful Super Bowl “Game Plan for Healthy Eating.” This is a peer reviewed publication


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M&S Reports Smaller Drop in Clothing Sales - Bloomberg For more local news from India, visit Bloombergquint.com Bloomberg the Company & Its ProductsBloomberg Anywhere Remote LoginBloomberg Anywhere LoginBloomberg Terminal Demo Request Bloomberg
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Published 24 months ago by Brian Mason
Published 20 months ago by clair jones
1.0 out of 5 stars boring!!, 4 July 2014
5.0 out of 5 stars god read, 4 Dec. 2013
2.0 out of 5 stars It was ok., 22 May 2013
By sandra forsythe - See all my reviews
I found this book a tad boring. There really was very little about Will.i.am's life: his childhood, home life, school.

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Politics For the Washington Area, a Second Lightning Strike
“After three years of frozen pay, unpaid furloughs, huge increases in retirement costs for new employees and the threat of massive layoffs at the Department of Defense and elsewhere, Congress and the administration need to keep their hands off of federal employees once and for all,” said J. David Cox, the national president of the American Federation of Government Employees, which represents about 650,000 federal employees.Typical Americans outside the Washington area might barely notice a shutdown. They would not be able to get a visa processed or hike in a national park. But important government transfers, like Social Security payments and Medicare bills, would most likely continue undisrupted.
But Washington is a company town, and federal dollars make up the lifeblood of the local economy, even as the region has diversified in recent years. The federal government accounts for about 30 percent of the jobs in the District of Columbia, 20 percent in Arlington County, Va., and 10 percent in Montgomery County, Md. — more than 350,000 jobs over the whole region.Here, the effect would be visible. Tens of thousands of federal employees would face furloughs. Major contractors would see their business disrupted, with parts of the government unable to process claims and federal contacts offline.
Shutting down the government would also put much of the District of Columbia’s local government offline. The city’s libraries and motor vehicle office would close. Trash pickup would be curtailed. (One small consolation, perhaps, would be the suspension of parking tickets.)That has rankled city officials, who have criticized Congress and attempted to keep employees on the job by declaring all of them essential. In 2011, the city government estimated that a federal shutdown would cost it $1 million to $6 million a week in lost tax revenue.
While the rest of the economy saw housing prices collapse, wages fall and unemployment soar during the recession and the slow recovery, the effects were felt less acutely in Washington. Surging federal spending helped to strengthen a vibrant and diversifying local economy.But the Washington area has been slowing since 2010, Professor Fuller said. Virginia, Maryland and the District of Columbia make up only one-twentieth of the country’s population. But the region is absorbing about one-fifth of the job losses related to sequestration, or about 330,000 positions.Professor Fuller estimated that federal cutbacks had removed $7 billion from the $460 billion regional economy in 2013. “We’re growing at half-speed,” he said.Nationally, the effect of a shutdown might be mild. Mark Zandi, the chief economist at Moody’s Analytics, estimated that a shutdown lasting a few days might cut fourth-quarter growth by 0.2 percentage points.But the longer the shutdown, the worse the pain. “Shutting the government down for three or four weeks would do significant economic damage,” he told the Senate Budget Committee. “Any interruption longer than a month would cause G.D.P. to fall for the quarter, and one longer than two months would likely precipitate another recession.”

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GraphSynth - Design, Implement, and Test Graph Grammars - CodeProject 10,255,263 members (58,065 online) Sign in
GraphSynth - Design, Implement, and Test Graph Grammars By mattica, 21 Nov 2006
3.40/5 - 4 votesμ 3.40, σa 3.20 [?]
Download setup - 1.53 MB Download project - 1.19 MB Introduction
Graph transformation systems, or graph grammars, are a branch of graph theory research that rigorously defines mathematical operations such as addition and intersection in graphs. Mathematicians have developed the foundations of this research, and engineering design researchers have appropriated the concept to formalize the creation of complex engineering systems. Electric circuits, truss structures, and chemical processes are just a few of the artifacts of engineering design that are easily represented by graphs. When viewing the artifact as a graph constructed from an initial simpler graph that describes the problem, one needs to develop a set of rules to capture the valid transformations that can occur. Rules and graphs in GraphSynth are stored in an XML format and are loaded into the program and instantiated as define graph object: nodes and arcs. Grammar rules are essentially constructed of two elements: application conditions (that, if met, are valid transitions in the state-space tree), and application instructions (how the graph is to be altered). These two elements are each represented as a graph: the conditional, recognition, or left-hand-side graph; and the application or right-hand-side graph. For more detail on recognition, click here. For more detail on application, click here. Background
For a detailed description including some of the text found here, go to graphsynth.com. Using the Code
Within the source files of GraphSynth, you will find the details for classes like grammarRule.cs and ruleSet.cs are stored in the project named Representation. The other main projects are Generation, GraphLayout, Evaluation, Guidance, Application_UI_and_Search. This final one, is the main one, the ".exe" is found in its bin directory. The other projects compile to DLLs. The authors of GraphSynth theorize that the division of representation, generation, evaluation, and guidance is useful in almost all computational synthesis methods. The representation is formulated by the programmer of the computational design method to capture the forms or attributes of the design space. Other than these in GraphSynth, the project named GraphLayout contains custom layout algorithms that the researcher may write for their resulting graphs. Within the Application_UI_and_Search project, there is folder called MainFormsAndSettings which includes start up routines, and the display forms. The one file called searchProcess.cs not included in the directory is likely where a researcher would write their main search routine. In fact, in each project the ".cs" file not included in a subdirectory is open to modification. These are searchProcess.cs, inheritedGraphClasses.cs, graphLayout.cs, GetToOptimum.cs, and EvaluateSwirls.cs. The latter two are for the facetious example presented in the searchProcess.cs file. These should be studied and then deleted. They merely offer an example of how the projects are intended to interact. For a particular application, one would create their own evaluation methods, and thus there are no general methods that can be provided for this. For guidance strategies, there are currently no such methods for graph synthesis. Our current research is developing a number of these. In the meantime, GraphSynth can be used to synthesize graphs, either through user-guided or random decisions. Future updates will include guidance methods, and thus a full optimization procedure can be made to design optimal graph topologies. Points of Interest
This work is part of an ongoing National Science Foundation funded research project. We have decided that C# offered the most powerful and easy approach to creating graph grammars. In the two years since our research has begun, we have borrowed from a number of CodeProject projects: most notably Netron (which is no longer available, but a version of it is compiled in this) and the properties Bag by Tony Allowatt. History
Since GraphSynth 1.5.0.0 (October 31st, 2006) Generation separated into its own DLL candidate.undoLastRule fixed. User Choose fixed. New layout to user choose. Now the last rule that has been applied can be undone. RuleSet number fixed. Introduced new static class in Representation: SearchIO. This is intended to be the way in which various functions communicate with the main process and the search process controller.
These help files have been improved to reflect the changes. See new section at the bottom of Search Process. Since GraphSynth 1.1.2.1 (September 5th, 2006) Separate DLLs! The biggest change is to make future updates and sharing of functions easier. There are now separate DLLs for various parts of the code. In the Recognize-Choose-Apply Cycle, the cycle limit exit is moved from the end of the process (after apply) to the very beginning of the process (see new flowchart on the generation page. Print command added – graphs can now be sent to the printer (Courtesy of Chaitanya Vempati). “Confirm each user choose” fixed (was false when it meant true). New Improved Graph Layout functions and DLL Stop layout menu item removed Netron Spring embedder sped up Custom layout buttons Only first three public methods under graphLayout will appear in list.
New keyboard shortcuts Default layout added to global setting for this as well
Properties window divorces from main when graph window maximized Fixed redraw problem by forcing Netron to redraw at key points in the code. Switched order of output and input directories in global settings Sped up printing to side bar text box Output box now prints downward Introduce consoleWriter in Representation DLL Starts writing to splash screen A warning is added in saving a rule if arc in K are accidentally connected up in opposite ways from L to R Arc.othernode checks both to and from in case the node is not even known to arc Terminate request honored after R, C and A Candidate’s recipe and performance parameters set to public
RCA now void with since redundant that candidate is passed
Since GraphSynth 1.0.2.1 (July 14th, 2006) The main change is the ability to edit settings within GraphSynth
A prompt for settings occurs at the onset if no settings file is found
Rule set has additional settings for how the Generation process will proceed
It is now possible to specify as many as 10 default rulesets compared to the previous 3
Since GraphSynth 0.0.0.0 Too numerous to list. GraphSynth started in January of 2005
Nice! what about license?Win32nipuh6-May-07 19:59 Interesting, but...Colin Angus Mackay22-Nov-06 3:07 Last Visit: 31-Dec-99 18:00 Last Update: 9-Dec-13 9:12Refresh1
GraphSynth is the first publicly available approach to creating graph grammars.
Last Updated 21 Nov 2006	Article Copyright 2006 by matticaEverything else

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Terror on the Tracks - Good Weekend | Wellness
Tony Wilson writes about terrible day his 6 week old baby's pram was blown onto railway tracks in Melbourne's inner north.
t ends up being the story of two handbrakes. first there was one that didn’t want to release. My wife and I have one of those newmillennium cars that attempts to automate the automotive experience, which means an old-fashioned handbrake crunch is all too yesterday. Instead we have a button. A button that groans a little when it’s called into service and lights up orange. A button that doesn’t intrude on cabin space being eyed off by expansionist drink-holders. A stupid bloody button that failed on the Sunday after the 2009 AFL Grand Final, and set off a chain of events that could have killed our baby. After 10 minutes battling the uncooperative handbrake, my wife, Tamsin, calls to withdraw from the family catch-up at my parents’ place. I am already there. Her voice resounds with the leaden weariness that is familiar to any parent of a four-week-old. “The car brake’s broken. It’s so annoying. I can’t get there.” Unfortunately, I know the train timetable. “There’s a train at 10.51,” I offer, feeling as if I’m whipping a beaten thoroughbred over the last two furlongs. “If you can make it, I’ll meet you at Jolimont with an umbrella (whack, whack). It’d be nice if you could (whack, whack), just because this is the only day when everyone’s going to be in Melbourne (whack, whack).” I push. I cajole. Racing Victoria Limited changed the whip rules to counter jockeys like me. It’s an umbrella sort of day. Actually it’s more of an umbrella-flippinginside-out sort of day. Rain, occasional hail, wind. Wind like you wouldn’t believe. A friend later tells me that a freak gust blew his driver-side door back on its hinges, writing off two panels. Nevertheless, at this point I’m still thinking umbrellas and some breakneck chivalry for a person who’s endured a car breakdown and a dash for a train, after a lengthy morning of co-ordinating a colicky newborn with a boundary-testing two-year-old, who, in her own words, “rikes being naughty”. I skol a coffee. If they make the 10.51, they’ll be at Jolimont right on 11am. My phone rings at 10.56. The ringtone is the Yip Yip Martians from Sesame Street, a frivolous false dawn for what is to come. The caller ID says it’s Tamsin. It takes me five seconds of disorienting babble to understand that it isn’t. “Hello, I’m calling from your wife’s phone. We’re at the station and there’s been an accident. I don’t want you to panic. Everyone seems to be okay but your wife is very upset. She’s here beside me, I’m going to put her on … ” It’s only about this point I realise it’s not Tam’s voice. For the longest time I’ve just blindly believed the caller ID. The screen said it was her. Why
It made news around the world: images of a distraught mother watching helplessly as her pram-with-baby toppled off a platform into the path of an oncoming train. Yet three weeks earlier, at another Melbourne station, a frighteningly similar incident occurred. Tony Wilson recalls the day that turned into a parent’s worst nightmare.
IMAGES TAKEN FROM KIDSAFE & CONNEX TRAINSAFE VIDEO (POSED BY MODELS); GETTY IMAGES
wouldn’t it be? It’s just as the first bolt of terror is striking that Tam assumes the phone, bungeeing me back out of the fire. She’s sobbing wildly, inconsolable. “He hit his head on the rail. He’s awake now, but we’re still going to go to the Children’s Hospital. He’s got swelling at the back of his head. He hit his head on the rail.” The rail. She’s said the word twice. What does she mean by the rail? It’s while Tam is sobbing out the details of the ambulance’s arrival that I finally work out she’s talking about the railway tracks. Somehow our four-weekold baby has ended up on the tracks. “What? Harry was on the tracks?” “The wind blew the pram off the platform. I had the brake on, but the wind must have caught the canopy.” She’s trying to speak but the sobs are consuming her. “I was trying to control Polly … and then I heard this crash … ” I charge back into my parents’ house. Within the minute, I’m off the phone and my sister Sam is behind the wheel. I spend the 10-minute drive to the Royal Children’s Hospital cutting deals with gods and devils and supernatural forces I don’t believe in. Sam tries to calm me, saying that if it were life and death, the call would’ve come from a very fast-moving ambulance. Sam drops me at Emergency and I sweep into an empty reception area. I explain the parts of the story that I know. The triage nurse tells me that they haven’t heard about it yet. “The really serious ones are rung through in advance,” she says kindly. She points to the spot where the ambulance will pull up outside. “They’ll park there. We’ll come and get you to take you through.”
Life on the line: an instructional video (opposite) was released last year by Kidsafe and Connex to help prevent accidents such as the ones that befell the Wilsons and another Victorian family.
or the next 35 minutes, my seagull head swivels as i make 10-second checks for an arriving ambulance. It’s long enough to cover all sorts of existential ground. How will we cope with the loss of somebody we never really got to know? Is life to become a series of tragic gaps, the birthday that would have been, the empty Moses basket that he was meant to grow out of? I’m sickened by the knowledge that our baby is in pain; four weeks old and in serious pain. And I can’t stop thinking about Tam. She saw it happen. Jumped onto the tracks to retrieve him. How is she going to get over this? The ambulance finally pulls in at a leisurely pace. I half-walk, half-run to the ambulance bay. The first person I see is Polly, my darling Polly, who is sitting tall and seat-belted in an adult seat, staring at her mother on a stretcher with Harry in her arms. A friendly paramedic unbuckles Polly
January 30, 2010 Good Weekend 27
26 Good Weekend January 30, 2010
and she jumps into my arms for a hug. “Baby Harry pram fell on train tracks,” she says, which is apparently the first thing she’s said for a while. She then has a go at saying ambulance, which is so cute that it sends me into a flurry of tears. The evidence of Tam’s distress is inked down her face in vertical stripes, the mascara thick and black near her eyes before trailing into softer greys closer to her mouth. She is helped from her stretcher, and Harry is placed gently in a hospital crib. His eyes are closed. The lump on the back of his head is enormous. Tam and I hug that desperate, nerve-jangling hug that the staff of the RCH must see every day. It’s only at this point that I get the full story. She’d arrived to find a near-empty station platform, assumed that she’d missed the 10.51, then heard the boom gates at Victoria Street and realised she could still make it. She applied the pram brake, a couple of clicks as always, and with Polly hurtling around like a free-range chook, she reached to control her. The next sound she heard, amid the dinging of the boom gates and the whistling of the wind and the excited chatter of her daughter was the crash of something hitting the train tracks. She says she scarcely remembers moving. She was just suddenly down there among the rocks and the rails. The pram was upside down, with Harry face down on the rail. There are no restraining straps for this type of pram, but the zip-up weather cover had fortunately prevented him from being flung clear. He was crying. Along the tracks, Tam could see the approaching lights of the 10.51. She then noticed that there were three people on the platform. Two were middle-aged women, seated in the station’s undercover alcove, but one was closer by, a 20-something male on a mobile phone. Tam laid Harry carefully on the concrete of the platform, and then laboured with the pram, lifting the godforsaken too-light-but-stillbloody-heavy thing up to head height. She’d had surgery the day after giving birth to stop some postnatal hemorrhaging. This wasn’t in the recovery manual. “Can you help me, please?!” she shrieked. The
Back on track: (below) Tony and Tamsin Wilson today, with their now three-year-old daughter, Polly, and baby son, Harry.
t the hospital, we settle in the resuscitation room, watching Harry as his head metamorphoses into the shape of ET’s. Nonetheless, the mood is relatively buoyant. His observations are good. He isn’t listless. He seems to be hungry. The doctors give him some oxygen, but don’t ventilate him. His behaviour seems to be typical for a baby his age. The doctors stress, however, that the CT scan will tell the story. He’s wheeled upstairs and placed on a football field of a table that reminds us how absolutely tiny he is. I’m asked to leave the room, but Tam is allowed to stay. Harry cries as he’s wedged into position. What else can he do? “Don’t panic if we take a while,” the operator tells us on the way out. “It’ll be at least half an hour before we’re back with results.” We start to get worried when it’s more than half an hour. By now it’s nearly 3.30pm, 4½ hours since the accident, and we’re both just exhausted. Sam has taken Polly home for a sleep, but beforehand has delivered me a burger and fries – enough to establish a fatty base-camp for my nausea. It ticks up to an hour. Still no news. I ask at the desk whether there’s any explanation for the delay. The nurse points to our young female doctor. “She’s on the phone to them right now. She’ll be in in a sec.” She takes an age. By now it’s not just the trans
There follows a dismal couple of minutes sitting in the company of a well-intentioned social worker who, in this case, was unfortunate with her timing. Tam and I have not yet had a moment alone together. “It’s a lot to take in,” the social worker keeps saying, and given it could be anything on the spectrum from full recovery to death depending on what the neurosurgeons say, she’s right on the money. Unfortunately, her being with us is not helping with the taking in, and we eventually find some blithering words with which to ask her to leave. We then wait for the neurosurgeon. It’s the worst hour of my life and I spend it alternately crying, embracing Tam, soothing Harry and texting siblings and parents. At some point, the emergency consultant, a specialist called Sandy, stops by to console and consolidate what has been said so far. Except he makes things sound better. “It’s a tiny amount of bleeding inside the lining of the brain,” he says of the scan. “I didn’t even see it at first.” “Is he going to … live?” I ask fearfully, wanting to be free from the worst of our nightmares. “From my experience,” the specialist says carefully, “this is not the sort of situation that is life threatening.” He’s calm and reassuring. He oozes competence. He’s like a knight in moodimproving purple pyjamas.
young man looked at her, registered the strangeness of seeing somebody on the tracks, but made no move to abridge his call, let alone assist. The two women rushed over and did their best, especially with Harry and Polly. With one eye on the kids, and one on the approaching train, Tam somehow jumped and pushed and levered her way back to safety. “Mummy so brave,” is how Polly tells it, with theatrical relish. “Train coming, whoooosh!” Fortunately for us, the distance between our station, Dennis, and the stop before it, Fairfield, is short, and non-express trains do not achieve huge speeds coming in. There’s also good visibility, and the driver of the 10.51 saw Tam on the tracks and managed to pull up before the station platform. She was also the one who calmed Tam, called the ambulance, and identified that Harry had some swelling on the back of his head. Needless to say, the gratitude and goodwill we have for that Connex employee is inversely proportional to the feelings we have for the 20-something on the mobile phone. He disappeared in the next big gust.
Tam scarcely remembers moving. She was just suddenly down there among the rocks and the rails. The pram was upside down, with Harry face down on the rail.
fats in the burger. The air is too hot. The cubicle is too small. Tam and I take turns cuddling Harry and worry that he isn’t crying enough for a baby who hasn’t fed in more than five hours. Finally the curtain opens and the young doctor arrives. Then another doctor. Then a social worker. Then a pastoral-care person. As soon as I see the size and nature of the entourage I don’t want the doctor to say a word. She looks at her notes and crouches down, establishing herself at our level. Don’t say it, I think, over and over. Please don’t say a word. Then she says it. She tells us that the scan revealed bad news. She says that there is a large cranial fracture on the top left-hand side of the skull. She says that there is bleeding on the brain. She looks at our precious baby’s head and with quiet, professional sadness states that “there is plenty going on in there”. We find out that the neuro surgeons have been called, and that they will be in soon to tell us more. Tam and I both burst into tears. The doctor gestures towards the social worker. “You might like to talk,” she suggests. “I’m really, really sorry.”
Suddenly, it’s like the ill wind has finally blown itself out. The neurosurgeons arrive and they agree with Sandy. It’s not a big bleed. “We were expecting bigger, given how it was described on the phone,” the younger one admits. The more senior neurosurgeon is the brotherin-law of a writer who is one of my best friends. He was best man to one of my former housemates. His mum is in a book club with my mum. I know him to say hello to, and actually call him “Stinger” as I shake his hand. He apologises for the circumstance of our catching up. I fall into small talk in the same way as I would at a party, which con vinces me that I would small talk on the scaffold. Stinger examines Harry, examines the scan. He confirms that it’s a small bleed. He tells us that there is no real build-up of pressure on Harry’s brain, because the cavities in a newborn’s skull allow for fluid to be released. He informs us that Harry won’t need immediate surgery. He then says the greatest sentence I’ve heard in my almost 37 years. “Really, given how things look at the moment, I’d imagine he will make a full recovery from this injury.”
January 30, 2010 Good Weekend 29
EAMON GALLAGHER; GETTY IMAGES
It’s now a story for Harry to hear and re-hear as he grows into the childhood that was so nearly taken from us all.
nd that was it. the end of our babyon-train-tracks ordeal. Or at least we thought it was. Three weeks later, I turned on my computer, opened my web browser and saw the lead story was “Baby survives hit by train”. I rocked back in my chair, unsure whether to venture into such maudlin terrain. Eventually I did, as I suppose I was always going to. The pram
Small miracles: (above right) Tony Wilson cuddles his son, Harry, now five months old and none the worse after his fall onto the rails.
toppling over. The mother flailing to catch it. Then the nightmare that had replayed for me every time I’d heard the Hurstbridge train go by in the past 20 days. The train really going “whoooosh”. The sickening contact. The woman making her awful splitsecond decision to step backwards and save her own life. The terrible, contorting agony that descends on her. The certainty of what she must know she is about to confront. Except it was a happy ending there, too. The baby somehow rode the impact, the pram pushed along by the train with its occupant gripped tightly by the restraint. And this time the hero was a teenager, climbing under the carriage, facing up to God knows what, providing the goodnews horror story that would nourish the tabloid media for weeks. My brother texted me the follow-up news the next day. “Other train lady being chased by Oprah producers!” Except, of course, she isn’t the other train lady. We are the other train lady. Now, when occasion comes to tell friends or family about Harry’s ordeal, eyes fly wide and they start jabbering even before the first sentence is out – “What, the one on the news?” To which we have to offer quick reassurance that ours was a different train incident, one where the train was com-
ing but didn’t actually strike the pram, one where the baby did suffer a head injury but Oprah didn’t find out about it. I hope that doesn’t sound like some sort of sick competitiveness. We’re very happy to be the other train lady, and are deeply thankful both babies are okay. The fact that I can smile, almost laugh and say mock-jealous “What are we, chopped liver?” jokes says I’ve almost recovered. It’s now a story for Harry to hear and re-hear as he grows into the childhood that was so nearly taken from us all. And if he hears it from his sister, this is how it goes: Polly: Daddy, baby Harry’s pram fell on train tracks. Dad: Yes, poor baby Harry. But Mummy was very brave. Polly: Mummy jump on train tracks. (Imitates jump) So big! Dad: Yes, she did do a big jump. Polly: Baby Harry’s hat fell on train tracks. Dad: That’s right. Harry’s hat’s still out there on the train tracks. Polly: (Pause) Daddy, Polly’s corn chips fell on train tracks, too. And when I hear that, I know that we’re all okay.
Australia United: We'll Always Have Kaiserslautern

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Mexico goalkeeper Guillermo Ochoa is a player of substance
A failed drug test led to Mexico’s World Cup hero playing in the relative obscurity of Corsica after he was overlooked by the major European clubs
Wed 18 Jun 2014 08.54 EDT Last modified on Mon 27 Nov 2017 18.13 EST
Guillermo Ochoa tested positive for clenbuterol in 2011 but was later cleared. Photograph: Fabrice Coffrini/AFP/Getty Images
If you were not familiar with Guillermo Ochoa before his exploits against Brazil last night, perhaps you should blame the drugs. Not because substance abuse can cause memory loss and inattention, but because the Mexico goalkeeper would probably have signed for a major European club three years ago if he had not failed a dope test.
Ochoa was one of five Mexico players who tested positive for clenbuterol after a Gold Cup match in 2011 and even though they were cleared two months later when an investigation concluded that they had unwittingly eaten contaminated meat, damage to Ochoa’s career had already been done. “The initial results were announced in May 2011, just before the official opening of the transfer window,” the goalkeeper said last year when explaining why a planned move to Paris Saint-Germain fell through. “We were facing a possible ban of one or two seasons. It took two months for our names to be cleared . By then, all negotiations had been cancelled and contacts disappeared. I understood the clubs. The only team who stayed in touch with me was Ajaccio.”
So Ochoa signed for the Ligue 1 strugglers. By then Ochoa was a sensation in his homeland, where he is referred to as “Memo”, the nickname he has had since childhood. He first came to national attention when Leo Beenhakker, then the manager of the country’s biggest club, América, surprisingly decided to turn to the 17-year-old when the club’s first-choice goalkeeper, Adolfo Ríos, got injured. “You wouldn’t have expected him to gamble on a 17-year-old like me, particularly at a club like América, where there’s always so much pressure day in, day out, and where you’re always in the spotlight,” Ochoa said. “Before I went out on the pitch he asked me what I’d always wanted to do, and I said to play for América in the First Division. And he said to me: ‘Well, here you are. Now go and enjoy it.’”
Ochoa soon established himself as his club’s No1 but it took a first set of heroics against Brazil for him to earn a place in the nation’s heart. He produced an outstanding display in Mexico’s 2-0 victory over the Seleção at the 2007 Copa América. Mexico finished third in that tournament and Ochoa, then aged 21, returned a superstar. He featured on the cover of the Fifa 08 and 09 video games and the French media suspected he was being used to flog another product when he ended an eight-year stay at Club América to join Ajaccio, who had just been promoted to the French top flight. Reports in France carped that the move was a mere advertising stunt by the Mexican TV company Televisa, which had bought the right to screen Ligue 1 in Mexico. It is true that the company paid part of his salary but the goalkeeper insisted that his move to Europe – a rarity for a Mexican goalkeeper – was motivated by a desire to improve. “I don’t earn as much now as I did in Mexico, but that doesn’t prevent me from being happy,” he said, several months in to his stay at Ajaccio.
Playing in Europe is an ambition he had held since watching his favourite goalkeeper, Peter Schmeichel. “He was amazing,” said Ochoa of the Dane. “He could stop everything that came his way. He was always someone I wanted to emulate. The funny thing is, though, I’ve become a completely different keeper to him.”
It did not take long for Ajaccio fans to realise what a good deal their club had got. Ochoa’s man-of-the-match display in his second game helped the Corsican club draw away at Lyon and set the tone for the rest of the season, during which his excellence was the chief reason why Ajaccio stayed up. He repeated those feats in his second season as the club again avoided relegation by the breadth of a goalie glove.
Still, Ochoa was criticised at home for moving to a relatively small foreign club. He lost his status as Mexico’s No1 when the then-manager Javier Aguirre put his faith in Óscar Pérez for the 2010 World Cup, to which Ochoa travelled but did not play in. That was the second time he had had to sit on the bench in the tournament, having also been an unused reserve four years previously. His star seemed to be fading and Antonio Carbajal, one of Mexico’s greatest goalkeepers, endorsed Aguirre’s decision, arguing that Ochoa “concedes too many goals from long range. And he often struggles to come out and claim crosses. I’m starting to wonder whether he has problems with his sight and concentration.” Before Brazil, there was still uncertainty over whether Ochoa would start, as the manager Miguel Herrera appeared torn between him and José de Jesús Corona. No one now doubts that Herrera made the right choice.
“There’s no goalkeeper in a World Cup that has done what Ochoa did against Brazil,” Herrera said after Tuesday’s match. “Memo makes great saves and gives us a lot of security at the back.” Mexico’s captain, Rafael Márquez, declared: “Memo was our saviour,” and his Brazilian counterpart, Thiago Silva, who has previously been thwarted by Ochoa at PSG, said: “He deserves to be congratulated, he has all of our respect.” The Barcelona defender Dani Alves sensed divine inspiration: “It felt as though the Virgin of Guadalupe [the patron saint of Mexico] was with Ochoa all the way. He saved everything.”
Ochoa has been busy during his time behind the ramshackle defence of Ajaccio – but not only on the pitch; in his spare time he has completed an online degree in sports management. This is a man intent on furthering his career, so there was no surprise when he announced after Ajaccio’s relegation last season that he would not be renewing his contract at the club. “Adiós Amigo!” began a statement on the club’s website before paying tribute to the goalkeeper. “After three years of good and loyal service to Ajaccio, Memo Ochoa is leaving the club for new pastures. He was relatively unknown in Europe when he came to us but he conquered the hearts of all Ajaccio fans with his innate goalkeeping talent and his endearing personality. Respected by his team-mates as well as opponents in all French clubs, he was always helpful, modest and attentive. He made more than 400 saves in three seasons in Ligue 1 and was the most consistent player in the league, playing 112 matches in that time. He is now being courted by many clubs and we do not know where he will go. But wherever it is, he goes with our best wishes for his career and his personal life.”
Marseille were considered favourites to sign Ochoa before the World Cup. After Tuesday night, the 28-year-old may find himself receiving even better offers.

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