text:
Patent US20090130835 - Method of manufacturing inverted t-shaped floating gate memory - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsA memory device having a floating gate with a non-rectangular cross-section is disclosed. The non-rectangular cross-section may be an inverted T-shape, a U-shape, a trapezoid shape, or a double inverted T-shape. Methods are disclosed for producing a floating gate memory device having an improved coupling...http://www.google.com/patents/US20090130835?utm_source=gb-gplus-sharePatent US20090130835 - Method of manufacturing inverted t-shaped floating gate memoryAdvanced Patent SearchPublication numberUS20090130835 A1Publication typeApplicationApplication numberUS 11/941,813Publication dateMay 21, 2009Filing dateNov 16, 2007Priority dateNov 16, 2007Also published asCN101436568A, CN101436568BPublication number11941813, 941813, US 2009/0130835 A1, US 2009/130835 A1, US 20090130835 A1, US 20090130835A1, US 2009130835 A1, US 2009130835A1, US-A1-20090130835, US-A1-2009130835, US2009/0130835A1, US2009/130835A1, US20090130835 A1, US20090130835A1, US2009130835 A1, US2009130835A1InventorsErh-Kun Lai, Yen-Hao Shih, Ming-Hsiang HsuehOriginal AssigneeMacronix International Co., Ltd.Export CitationBiBTeX, EndNote, RefManReferenced by (3), Classifications (11), Legal Events (1) External Links: USPTO, USPTO Assignment, EspacenetMethod of manufacturing inverted t-shaped floating gate memory
US 20090130835 A1Abstract
1. A method for forming a semiconductor device having a memory device, the method comprising:
providing a semiconductor substrate; forming a first dielectric layer over the substrate; forming a first conductive layer over the first dielectric layer; removing a portion of the first conductive layer, the first dielectric layer, and the semiconductor substrate to provide at least two trenches spaced apart from each other and extending from the first conductive layer to the semiconductor substrate; forming a first insulating layer within the trenches to fill the trenches and protrude over a top surface of the first conductive layer to provide at least two insulating protrusions; forming sidewall insulators along sidewalls of the insulating protrusions; and forming a second conductive layer over the first conductive layer to fill in a gap between the sidewall insulators to form an inverted T-shaped conductor, the inverted T-shaped conductor including a portion of the first conductive layer and a portion of the second conductive layer. 2. The method of claim 1, wherein forming the two insulating protrusions comprises:
providing a protective layer over the first conductive layer; removing a portion of the protective layer when removing the portion of the first conductive layer, the first dielectric layer, and the semiconductor substrate to provide the two trenches that also extend through the protective layer; forming the first insulating layer within the trenches to fill the trenches; and removing the protective layer with the first insulating layer protruding over a top surface of the first conductive layer to provide the two insulating protrusions. 3. The method of claim 2, wherein the protective layer comprises silicon nitride.
12. A method for forming a semiconductor device having a non-volatile memory device, the method comprising:
providing a semiconductor substrate; forming a first dielectric layer over the substrate; forming a first conductive layer over the first dielectric layer; providing a protective layer over the first conductive layer; removing a portion of the protective layer, the first conductive layer, the first dielectric layer, and the semiconductor substrate to provide at least two trenches spaced apart from each other and extending from the protective layer to the semiconductor substrate; forming a first insulating layer within the trenches to fill the trenches; removing the protective layer with the first insulating layer protruding over a top surface of the first conductive layer to provide at least two insulating protrusions; and providing a second conductive structure between the insulating protrusions and narrower than the underlying first conductive layer to form an inverted T-shaped conductor, the inverted T-shaped conductor including a portion of the first conductive layer and a portion of the second conductive layer. 13. The method of claim 12, wherein providing the second conductive structure comprises:
forming sidewall insulators along sidewalls of the insulating protrusions; and forming a second conductive layer over the first conductive layer to provide the second conductive layer in a gap between the sidewall insulators. 14. The method of claim 12, wherein forming the first insulating layer within the trenches comprises:
forming the first insulating layer over the substrate to fill the trenches and over the protective layer; and removing a portion of the first insulating layer to expose the protective layer and to substantially align a top surface of the first insulating layer with a top surface of the protective layer. 15. The method of claim 13, wherein forming the sidewall insulators along the sidewalls of the insulating protrusions comprises:
forming a second insulating layer over the first conductive layer and the insulating protrusions; and removing a portion of the second insulating layer to provide sidewall insulators along the sidewalls of the insulating protrusions. 16. The method of claim 13, wherein the sidewall insulators comprise silicon nitride.
22. The method of claim 20, further comprising forming a third conductive layer over the second dielectric layer and etching the third conductive layer to form a control gate. Description
The invention relates generally to a method of manufacturing memory devices and, more particularly, memory devices that may have an inverted T-shaped floating gate.
Memory devices are devices for storing data and are usually implemented in the form of integrated circuitry. In contrast to volatile memory devices such as DRAM (dynamic random access memory), non-volatile memory devices are capable of retaining data in the absence of power supply. Given its nature, non-volatile memory devices are commonly used as memory cards or storage devices in portable electronic devices such as cell phones, MP3 players, digital still and video cameras, and other consumer electronics. As a result, the demand of non-volatile memories such as flash memories has grown exponentially in the past few years. As part of the growing demand, there are also demands and expectations for memory devices with low cost, low power consumption, and high performance or capacity, which have been driving the development of various memory designs.
Among different designs of memory devices, floating gate structures are one of the dominating non-volatile memory technologies. As an example, floating gate design structures typically use polysilicon floating gates to store charges, and a number of floating gates may be arranged in the form of memory arrays under the architectures of NAND flash and/or NOR flash memory. To program and erase a memory cell, charge tunneling techniques may be used to place charge carriers (i.e., electrons or holes) in the floating gate.
Without limiting the scope of the invention, floating gate transistors may be used in various devices and are commonly incorporated into non-volatile memory devices such as flash, EPROM, and EEPROM memory devices. For example, floating gate MOSFETs are commonly used in non-volatile memories. A floating gate MOSFET may include a MOSFET and one or more capacitors used to couple control voltages to the floating gate. A floating gate is a polysilicon gate insulated or surrounded by insulative materials such as SiO2. The floating gate may store charge because it is completely surrounded by a high-quality insulator. The charge on the floating gate may be modified, for example, by applying voltages to the source, drain, and control gate terminals to effect Fowler-Nordheim tunneling and hot carrier injection. To maximize efficiency for this type of memory storage, it is desirable to have a high coupling ratio for floating gate memory devices.
In one embodiment of the invention, a method for forming a non-volatile memory device is disclosed. A semiconductor substrate may be provided, and a first dielectric layer is formed over the semiconductor substrate. A first conductive layer is formed over the first dielectric layer. At least two trenches spaced apart from each other are provided by removing a portion of the first conductive layer, the first dielectric layer and the semiconductor substrate. The trenches extend down from the first conductive layer to the semiconductor substrate. A first insulating layer is formed within the trenches to fill the trenches. At least two insulating protrusions are provided by forming a first insulating layer within the trenches to fill the trenches with the first insulating layer protruding over a top surface of the first conductive layer. Sidewall insulators are formed along sidewalls of the insulating protrusions. A second conductive layer is formed over the first conductive layer to fill in a gap between the sidewall insulators to form an inverted T-shaped conductor. The inverted T-shape includes a portion of the first conductive layer and a portion of the second conductive layer.
In another embodiment of the invention, a method for forming a non-volatile memory device is disclosed. A semiconductor substrate may be provided, and a first dielectric layer is formed over the semiconductor substrate. A first conductive layer is formed over the first dielectric layer and a protective layer is formed over the first conductive layer. At least two trenches spaced apart from each other are provided by removing a portion of the protective layer, the first conductive layer, the first dielectric layer and the semiconductor substrate. The trenches extend down from the protective layer to the semiconductor substrate. A first insulating layer is formed within the trenches to fill the trenches. At least two insulating protrusions are provided by removing the protective layer with the first insulating layer protruding over a top surface of the first conductive layer. A second conductive layer is provided between the insulating protrusions and narrower than the underlying first conductive layer to form an inverted T-shaped conductor. The inverted T-shape includes a portion of the first conductive layer and a portion of the second conductive layer.
FIG. 1 illustrates an example of a floating gate transistor in the prior art.
FIG. 2 illustrates an exemplary non-volatile memory device structure having an inverted T-shaped floating gate consistent with embodiments of the invention.
FIGS. 3A-H illustrate an exemplary process for forming a non-volatile memory device consistent with embodiments of the invention.
Reference will now be made in detail to the exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same. The following examples disclose a memory device that uses a floating gate with a unique shape that provides a high coupling ratio for a floating gate structure. According to one example, the floating gate structure has an inverted T-shape, described in further detail below.
FIG. 1 illustrates a conventional floating gate transistor 100. Floating gate transistor 100 is formed on a substrate 102 and includes tunnel oxide layer 103, source 104, drain 106, control gate 108, and floating gate 110. Floating gate 110 has a cross-section that is rectangular in shape and has a top contour 115. A dielectric layer 116 is provided between floating gate 110 and control gate 108. In conventional floating gate transistor 100, the voltage VFG at the floating gate 110 may be governed by the following equation:
where Cgate and VG are the capacitance and voltage at the control gate 108, respectively, Csource and VS are the capacitance and voltage at the source 104, Cdrain and VD are the capacitance and voltage at the drain 106, and Csub and Vsub are the capacitance and voltage at the substrate 102. When substrate 102, source 104, and drain 106 are grounded, Eq. 1 reduces to the following:
The first term on the right hand side of Eq. 2 is known as the coupling ratio, and it is desirable to have a high coupling ratio, e.g., 0.6. The capacitance at the gate Cgate is given by the following relationship:
where ∉ is the dielectric constant, A is the surface area between the control gate 108 and the floating gate 110, and d is the distance between the control gate 108 and the floating gate 110. One can increase the coupling ratio by varying one or more of these three variables. In other words, increasing the dielectric constant, increasing the cross-sectional area, or decreasing the distance will result in a higher coupling ratio.
Embodiments of the present invention may increase the surface area by using an inverted T-shaped floating gate. For example, the surface area A between the control gate and the floating gate is determined by the length of the top contour of the floating gate. By changing the cross-sectional profile of the floating gate 110 from a rectangle to an inverted-T shape, the length of the top contour may be increased, and the surface area between the control gate 108 and the floating gate can be also be increased.
FIG. 2 illustrates an exemplary memory device structure having an inverted T-shaped floating gate consistent with examples of the present invention. As discussed above, the shape of the floating gate may provide an increased coupling ratio between the floating gate and the control gate. Non-volatile memory device structure 200 may include substrate 202, tunnel oxide layer 204, inverted T-shaped floating gate 210, shallow trench isolation (STI) structures 212, interpoly dielectric layer 216, and word line layer 218, which may function as a control gate. STI structures 212 effectively separate a plurality of memory cell regions. The inverted T-shaped floating gate 210 may have a top contour that would have a longer peripheral length as compared to a floating gate having a rectangular cross-section. In other words, there is more surface area with the inverted T-shape gate to increase the capacitance, thereby increasing the coupling ratio as compared to a device with a floating gate having a rectangular cross-section.
Alternatively, other cross-sectional shapes may be used for a floating gate to increase capacitance and the coupling ratio. Examples may include a U-shaped floating gate, a trapezoidal-shaped floating gate, and a double inverted T-shaped floating gate. In general, a floating gate having a cross-sectional profile such that the top contour is not a flat surface may be used to increase the coupling ratio. Although in this case, the top contour of the floating gate 210 forms an interface with the word line 218, other orientations between the floating gate 210 and the word line 218 may be used, so that the “top” contour may become the “bottom” contour or a “side” contour. Also, a plurality of memory cells having the non-volatile memory device structure 200 or similar structure may be arranged in one or more arrays to form a non-volatile memory device, with a plurality of word lines and bit lines (not shown) coupled to the floating gates and control gates of the individual memory cells.
FIGS. 3A-H illustrate an exemplary process of forming a non-volatile memory device consistent with the embodiments of the invention. Referring to FIG. 3A, a semiconductor substrate 302 is provided, which preferably is a p-type silicon substrate. The semiconductor substrate 302 may be, for example, amorphous silicon. A first dielectric layer 304 is formed over the substrate 302. The first dielectric layer may be, for example, a tunnel silicon oxide layer. In one embodiment, the first dielectric layer 304 is about between 40 and 120 Angstroms. A first conductive layer 306, later to be formed into a portion of the floating gate, is formed over the first dielectric layer 304. The first conductive layer 304 may include polysilicon and, as an example, may have a thickness between approximately 200 and 1,500 Angstroms. In one example embodiment, a protective layer 308 may then be formed over the first conductive layer 306. The protective layer 308 may serve as a stopping layer for a chemical mechanical polishing (CMP) and may be a silicon nitride layer with a thickness between 300 to 1,500 Angstroms.
In FIG. 3B, trenches 310, which are used to effectively separate a plurality of memory cell regions and spaced apart from each other, are provided by removing a portion of the protective layer 308, the first conductive layer 306, the first dielectric layer 304 and the semiconductor substrate 302. The trenches 310 are extending from the protective layer 308 through the first conductive layer 306 and the first dielectric layer 304 to the semiconductor substrate 302. Subsequently, the trenches 310 are filled with a first insulating layer 312 (e.g. a silicon oxide layer) using either a high density plasma (HDP) deposition or by a spin on glass (SOG) technique, thus forming shallow trench isolation (STI) as shown in FIG. 3B. Then, in one example embodiment, the STI may be subject to the chemical-mechanical polishing (CMP) so that a portion of the first insulating layer 312 may be removed to expose the protective layer. As a result, a top surface of the first insulating layer 312 is aligned with a top surface of the protective layer 308.
Referring to FIG. 3C, insulating protrusions 314 are provided by removing the protective layer 308 with the first insulating layer 312 protruding over a top surface of the first conductive layer 306. In one example embodiment, the removal is accomplished by using a wet etch process with phosphoric acid (H3PO4). Alternatively, a dry etch process may be used.
A second insulating layer, for example, a silicon nitride layer, may be formed over the first conductive layer 306, which covers the first conductive layer 306 and over the top and exposed sidewalls of the insulating protrusions 314. In one example embodiment, a sidewall insulator etch process is performed on the second insulating layer to provide sidewall insulators 315, which are disposed along the sidewalls of the insulating protrusions 314, as shown in FIG. 3D, In one example embodiment, a portion of the second insulating layer, in other words, all of the second insulating layer except the sidewall insulators 315, may be removed from over the first conductive layer 306 to form a gap 317. In one example embodiment, the second insulating layer is etched by means of a wet etch process with phosphoric acid (H3PO4). A dry etch process may be used in other example embodiments.
Referring to FIG. 3E, a second conductive layer 318 (e.g., a polysilicon layer), later to constitute another portion of the floating gate, is formed over the first conductive layer 306 to fill in the gap 317 between the sidewall insulators 315. As a result, the second conductive layer 318 makes contact with the underlying first conductive layer 306 electrically. As shown in FIG. 3E, a portion of the second conductive layer 318 (i.e., in the gap 317 between sidewall insulators 315) in combination with a portion of the first conductive layer 306 between adjacent trenches 312, forms an inverted T-shaped conductor which may serve as a floating gate. In one example embodiment, the second conductive layer 318 may have a thickness between about 200 to 1500 Angstroms. The inverted T-shaped conductor may subsequently be subjected to an implantation with an N-type dopant such as arsenic (As).
In one embodiment, as shown in FIG. 3F, the sidewall insulators 315 may be removed using a wet etch. The sidewall insulators 315, for example, may include silicon nitride. Accordingly, a wet etch process with phosphoric acid (H3PO4) is used to easily strip the sidewall insulators 315, leaving the first conductive layer 306, the second conductive layer 318 and the first insulating layer 312 free of any defects.
The insulating protrusions 314 filled with the first insulating layer 312, referring back to FIG. 3C, are protruding over the top surface of the first conductive layer 306. The insulating protrusions may optionally be removed by applying a wet etch with hydrogen fluoride (HF). As a result, the first insulating layer 312 may be aligned with the first conductive layer 306 as illustrated in FIG. 3G.
In FIG. 3H, a second dielectric layer 320 is formed over the contours of the inverted T-shaped conductor and the top surface of the insulating protrusions 314. In one embodiment, the second dielectric layer 320 is a tri-layer structure. The tri-layer structure may include, for example, a first silicon oxide layer, a silicon nitride layer formed over the first silicon oxide layer, and a second silicon oxide layer formed over the silicon nitride layer (silicon oxide-silicon nitride-silicon oxide layer). Then a third conductive layer 322, which may serve as control gates, may be formed over the second dielectric layer 320. The third conductive layer 322 may be patterned to form word lines of the memory device.
Referring to FIG. 3H, it is apparent that the surface area A between the control gate (the third conductive layer 322) and the floating gate (the inverted T-shaped conductor) is increased by increasing the peripheral length of the contour of the inverted T-shape floating gate. Thus the capacitance at the floating gate Cgate is increased based on the equation
Referenced byCiting PatentFiling datePublication dateApplicantTitleUS7973356 *Sep 30, 2008Jul 5, 2011Renesas Electronics CorporationNonvolatile semiconductor memory and method of manufacturing the sameUS8114742May 11, 2011Feb 14, 2012Renesas Electronics CorporationNonvolatile semiconductor memory and method of manufacturing the sameUS8536639Nov 30, 2011Sep 17, 2013Peking UniversityI-shape floating gate for flash memory device and fabricating the same* Cited by examinerClassifications U.S. Classification438/594, 257/E21.422International ClassificationH01L21/336Cooperative ClassificationH01L29/7881, H01L21/28273, H01L29/42324, H01L27/11521European ClassificationH01L29/788B, H01L21/28F, H01L29/423D2B2, H01L27/115F4Legal EventsDateCodeEventDescriptionNov 16, 2007ASAssignmentOwner name: MACRONIX INTERNATIONAL CO., LTD., TAIWANFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:LAI, ERH-KUN;SHIH, YEN-HAO;HSUEH, MING-HSIANG;REEL/FRAME:020128/0727;SIGNING DATES FROM 20070912 TO 20071030RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

value: This website is a search engine provided by Google. Handling over 3.5 billion searches per day, it has a 92% share of the global search engine market.


text:
QuickBooks 2013 In Depth by Laura Madeira | 9780133256451 | NOOK Book (eBook) | Barnes & Noble
Do more in less time! Whether you’re an entrepreneur, accountant, or bookkeeper, this comprehensive guide will help you get the most out of QuickBooks 2013: more productivity, more business knowledge, and more value! Drawing on her unsurpassed QuickBooks consulting and accounting experience, Laura Madeira delivers step-by-step guides…
Do more in less time! Whether you’re an entrepreneur, accountant, or bookkeeper, this comprehensive guide will help you get the most out of QuickBooks 2013: more productivity, more business knowledge, and more value! Drawing on her unsurpassed QuickBooks consulting and accounting experience, Laura Madeira delivers step-by-step guides and practical checklists for taking total control over business finances and improving everything from planning to reporting and payroll to invoicing. • Create a new QuickBooks file; convert from other software; and set up users, permissions, and preferences • New! Learn how to use tools specific to your version of QuickBooks, including QuickBooks Enterprise Solutions • Understand QuickBooks lists from the chart of accounts, items, classes, and more • Set up and manage inventory, vendors, customers, and payroll • Track product or service sales and manage the profitability of your company • Efficiently download bank and credit card transactions • Master all the essentials of financial reporting; customize and memorize reports • Review the accuracy of your data, with step-by-step instructions accompanied by checklists • Share QuickBooks data with your accountant or client at tax time • Use QuickBooks 2013’s tools for managing loans, planning and preparing for year-end, and syncing with Outlook contacts • Efficiently review and correct client data errors, from misclassified transactions to incorrect beginning balances • Prepare customized reports and documents using MS Excel and Word integration • Master powerful shortcuts for working more efficiently and saving precious time • Learn how to reliably back up your data, troubleshoot database errors, and manage QuickBooks data integrity All In Depth books offer • Comprehensive coverage with detailed solutions • Troubleshooting help for tough problems you can’t fix on your own • Outstanding authors recognized worldwide for their expertise and teaching style Learning, reference, problem-solving...the only QuickBooks 2013 book you need! Read More
9780133256451

type: global

value: This website is an American bookseller. It is a Fortune 1000 company and the bookseller with the largest number of retail outlets in the United States.


text:
French ex-trader Kerviel leaves prison, vows continued fight against bank in fraud case | Fox News
French ex-trader Kerviel leaves prison, vows continued fight against bank in fraud case
PARIS – A Frenchman convicted in one of history's largest trading fraud cases has emerged from a prison south of Paris on conditional release before being equipped with an electronic bracelet to monitor his movements.
Jerome Kerviel left France's Fleury-Merogis prison, where he was held apart from other inmates, and said Monday he was "super happy" about the release. He will have freedom of movement on weekends and during the day on weekdays.

value: This website is an American multinational conservative cable news television channel based in New York City. It is owned by Fox News Media, which itself is owned by the Fox Corporation.


text:
Amazon.co.uk: D. Bourke's review of Marketing Plans: How to prepare them, how ...
The bible of marketing planning, 4 Jan 2009
This review is from: Marketing Plans: How to prepare them, how to use them (Paperback)
This book is the ultimate if you are serious about creating truely strategic marketing plans for your business. It basically gives you all the fundamentals required and takes it so much further, any company big or small can benefit from the knowledge in this book. It has been updated well and questions some of the traditional theories, i.e. features an updated SWOT.Also, if you read the intro it gives you a bit of a guide on how best to use it, so if you just need to get a breif overview of how to structure a plan you can pick the best chapter/s to read, if you want to go more in depth you can dip in and out of it.All in all, this is an essential text for marketers, don't bother with Kottler he hasn't done anything good in 15 years.
Marketing Plans: How to prepare them, how to use them 0750683864
The bible of marketing planning
Top Reviewer Ranking: 1,737,111

value: This website is an American multinational technology company which focuses on e-commerce, cloud computing, digital streaming, and artificial intelligence.


text:
Words containing bifes | Words that contain bifes
Words containing bifes | Words that contain bifes http://www.thefreedictionary.com/words-containing-bifesPrinter Friendly
10,058,695,749 visitors served
Words containing bifes
Found 1 words containing bifes. Browse our Scrabble Word Finder, Words With Friends cheat dictionary, and WordHub word solver to find words that contain bifes. Or use our Unscramble word solver to find your best possible play! Related: Words that start with bifes
6 letter words containing bifesSee also6 letter words containing bifesbifestSee also:2-letter words with CWords that start with sWords with the letter xWords that start with hWords that end in zWords that end in qWords containing bifeWords containing biferWords containing bifex

value: This website is an American online dictionary and encyclopedia that aggregates information from various sources.


text:
Suzuki Marauder VZ800 Parts | eBay
Suzuki Marauder VZ800 Chain
VZ800 Engine
Suzuki Marauder 800 Windshield
VZ800 Motor
Aluminum Exhaust Muffler Pipe Three-outlet Tail Pipe Kit 38-51mm Part For Motors (Fits: Suzuki Marauder 800 VZ800)
User ID a-beautiful-mind2017 (Feedback score 307)
SUZUKI FRONT FENDER BRACE VZ 800 MARAUDER 1997-2004 PART # 53120-48E00
FRONT FENDER BRACE. VZ800 MARAUDER. FOR SALE IS A USED SUZUKI PART.MAY FIT OTHER YEARS AND MODELS. IF YOUR YEAR AND MODEL IS THERE THEN THE PART FITS. VZ800 (1997). VZ800 (2004). PART NUMBERS AND INTE...
VZ800 MARAUDER 1997-2003 COVER, MUFFLER NEW NOS- SUZUKI- PARTS.COM
THIS PART IS NEW ! NEW FROM ORIGINAL STOK SUZUKI. BIG STOK OF ORIGINAL PARTS SUZUKI. INFO FOR YOUR SUZUKI. we are easy people and we are happy to make parteners to world.
Motorcycle TPMS LCD Display Wireless Tire Pressure Monitoring System USB Powered (Fits: Suzuki Marauder 800 VZ800)
Wireless Motorcycle Tire Tyre Pressure Monitoring System LCD Dispaly USB Powered (Fits: Suzuki Marauder 800 VZ800)
Design Line Knifeless Tape 3.5mm x50m Vinyl Car Graphic Wrap Application Tool (Fits: Suzuki Marauder 800 VZ800)
50m/164' Roll Design Line Knifeless Tape Create Striping. Product: Knifeless Tape. Size: 3 5mm x 50m. Tape can be broken with hands for faster application. Model: Design Line. Application: Create stri...
Parts Unlimited Ultra I Cover - BG-0102 Medium BG-0102 BG-0102 (Fits: Suzuki Marauder 800 VZ800)
Honda ST1100 1997. Honda ST1100 1998. Honda ST1100 1999. Honda ST1100 2000. Honda ST1100 2001. Honda ST1100 2002. Honda RVT1000R RC51 2000. Honda RVT1000R RC51 2001.
Motorcycle Tire Pressure LCD Display Real Time Monitoring System 2 Sensors TPMS (Fits: Suzuki Marauder 800 VZ800)
Parts Unlimited Ultra I Standard Motorcycle Cover -Medium- Black BG-0102 (Fits: Suzuki Marauder 800 VZ800)
Made in the U.S.A. Sewn-in vents minimize condensation. Full two-year warranty against defects in material.
Parts Ultd Fork Oil Seals for Yamaha YZF R 1 YZF-R1 1998-01 (Fits: Suzuki Marauder 800 VZ800)
PARTS UNLIMITED BG-0102 COVER-P/U ULTRA-I M (Fits: Suzuki Marauder 800 VZ800)
ULTRA COVERS Top-quality, water-resistant construction with tons of features Made of 300 x 300 denier polyester with urethane backing Sewn-in vents minimize condensation Flannel liner (on L-XXL si...
Motorcycle Chrome Rearview Mirror Fit Suzuki Marauder VZ 800 1600 Savage LS 650 (Fits: Suzuki Marauder 800 VZ800)
Motorcycle Tire Pressure Monitoring System TPMS USB Power LCD Display Waterproof (Fits: Suzuki Marauder 800 VZ800)
For Motorcycle ATV Parts Carb Jet Cleaning Tool Set Carburetor Wire Cleaner Set (Fits: Suzuki Marauder 800 VZ800)
1xMotorcycle ATV UTV Oil Cooler Water Cooler Electric Radiator Cooling Fan Buggy (Fits: Suzuki Marauder 800 VZ800)
ATV Electric Radiator Thermal Cooling Fan For Chinese 200cc 250cc 4 Wheeler Quad 4 Wheeler Go Kart Buggy UTV. Kart Dirt Pit Motor Bike Motorcycle UTV. Motorcycle Motorbike ATV Cable Lubricator Tools B...
5/16'' 8mm Universal Fuel Filter Glass Motorcycle Car Petrol Diesel Inline Tube (Fits: Suzuki Marauder 800 VZ800)
5/16" 8mm Inlet and Outlet. 1 x Fuel Filter.
Motorcycle Multi Repair Tool Kit Allen Hex Spoke Wrench Mountain For Suzuki (Fits: Suzuki Marauder 800 VZ800)
3 Socket Hex Wrench 8/9/10mm. 6 Hex (Allen) Key: 2/2.5/3/4/5/6mm. This Multi Function Bike tool is portable, lightweight and the perfect accessorie for general bike repairs. Model: Combine repair tool...
Motorbike Chain Lubricator Grease Lub Parts & Accessories Oiler Maintenance Set (Fits: Suzuki Marauder 800 VZ800)
1 X Set Motorcycle Chain Lubricator (No oil). Install the oil cap on the left side of the bumper.Let the end of the line pass through the gap, adjust the screw, and then pass through the oil pump pist...
50 X Motorcycle Bike 2.8mm 2 3 4 6 9 Car Motor Electrical Connector Terminal Kit (Fits: Suzuki Marauder 800 VZ800)
Motorcycle Repair Tool Kit Allen Hex Spoke Wrench Mountain For Honda (Fits: Suzuki Marauder 800 VZ800)
Multifunction Repair Tool Kit Allen Key Hex Socket Wrench For Suzuki Motorcycle (Fits: Suzuki Marauder 800 VZ800)
1Set Plastic Radio Door Clip Panel Trim Dash Audio Removal Trim Pry Kit Tool (Fits: Suzuki Marauder 800 VZ800)
Great for automotive snap on trim panel and molding removal. Item included: Car Panel Removal Tool(4Pcs/Set). Easily remove trim,moldings,door skins and panels,dash bezels etc. Works for Interior and ...
Motorcycle Chain Lubricant Oiler Grease Lub Parts & Accessories Maintenance Kit (Fits: Suzuki Marauder 800 VZ800)
Install the oil cap on the left side of the bumper.Let the end of the line pass through the gap, adjust the screw, and then pass through the oil pump piston cylinder of line hole. Adjust the oil pump ...
Motorcycle LED Neon Strip Under Car Body Glow Light Strip Kit 2 x 90cm +2 x135cm (Fits: Suzuki Marauder 800 VZ800)
It will make you feel magical when driving at night with this flexible LED light strip. We will reply you within 24- 48 hours.
4PCS Car Panel Dash Stereo Radio Installer Plastic Removal Pry Tool Kit For Moto (Fits: Suzuki Marauder 800 VZ800)
Motorcycel Motor 5/16'' 8mm Fuel Filter Metal & Glass Petrol Diesel Inline Tube (Fits: Suzuki Marauder 800 VZ800)
Chrome Rearview Mirrors For Suzuki Marauder VZ 800 1600 Savage LS 650
Universal fits for most 8mm/10mm threaded motorcycles(except Harley Davidson / Yamaha).
LED Speedometer Odometer Tachometer Fit Honda Shadow Ace Classic VT 1100 700 750 (Fits: Suzuki Marauder 800 VZ800)
NATIONAL CYCLE FLYSCREEN DK SMK PART# N2535 NEW Dark Tinted 55-2535 562-27005 (Fits: Suzuki Marauder 800 VZ800)
Flyscreen Windshield, Dark Tinted. National Cycle. Color : Dark Tinted. We understand that such delays can be very inconvenient when they occur, but we do not have any influence over such situations.
Chrome 1" Handle Bar Hand Grips Fit Suzuki Intruder Volusia VS VL 800 1400 1500 (Fits: Suzuki Marauder 800 VZ800)
To fit most Honda,Yamaha,Suzuki and Kawasaki cruisers bikes with 1" handlebars(both left and right). To fit Harley Davidson 1970~2012 models with 1" handbars(both left and right),except Harley Dyna Wi...
About Suzuki Marauder VZ800 Parts
Installing Suzuki Marauder VZ800 parts found through the vast inventory on eBay can help you ensure that your bike remains in good condition. If, for example, you choose to purchase Suzuki Marauder VZ800 saddlebags, you get options that range from quality plastic to leather bags. These bags differ in size, but are able to give your bike a good look while at the same time providing room for you to carry important items. A new Suzuki Marauder VZ800 tank made of rust-resistant steel or aluminum allows just the right amount of fuel to circulate while, at the same time, eliminating possibilities of leakages or evaporation that may be experienced when using an old worn-out tank. If you are thinking of enhancing visibility, it may be a good idea to consider windshields that often use hard plastic and reinforced at the edges to avoid damage. Enhance nighttime visibility by installing Suzuki Marauder VZ800 parts like new headlights and replacing reflectors that may not be clear due to damage or staining. Parts like these and many more can help to keep your Marauder VZ800 on the road for years to come.

value: This website is an American multinational e-commerce corporation based in San Jose, California, that facilitates consumer-to-consumer and business-to-consumer sales through its website.


text:
http%3A%2F%2Fsamples.audible.com%2Fbk%2Facx0%2F000333%2Fbk_acx0_000333_sample.mp3+flashcontent2GASM1F8QWYAXWRPZP7Z0
Written by: Bob Mayer , Robert Doherty
3.90 (867 ratings)
3.9 (867 )
3.9 (778 )
4.1 (774 )
William 07-30-12
There are many threads being pulled together to weave this story. Although they all worked from a plot perspective, the story was unsatisfying. There were hours and hours of setup, the sort of thing that usually happens in the first third of a book, only here it was the entire novel. There were no surprises, just a hash of all the expected "woo" elements: Nazis, pyramids, UFOs, Atlantis, ancient runes, government coverups, etc. Maybe the author wanted to connect every fringe theory on the internet in one story, thereby getting all the niche markets at once.

In the end, it was mostly there as a setup for the sequel.
GLENNO 09-14-13
GLENNO 09-14-13 Member Since 2013
Matthew SEATTLE, WA, United States 08-27-12
Matthew SEATTLE, WA, United States 08-27-12 Member Since 2016
Brenda Madison, OH, United States 07-16-12
Brenda Madison, OH, United States 07-16-12 Member Since 2010
Joey MAROA, ILLINOIS, United States 09-10-12
Joey MAROA, ILLINOIS, United States 09-10-12 Member Since 2011
MultiMatt 08-20-12
MultiMatt 08-20-12 Member Since 2010
Blue Dragonfly 12-02-16
"Wow! Everything a UFO buff could dream of"
Pedro 800 NW 13 Ave Miami Florida 33125 06-06-12

value: This website is an American online audiobook and podcast service that allows users to purchase and stream audiobooks and other forms of spoken word content. This content can be purchased individually or under a subscription model where the user receives "credits" that can be redeemed for content monthly and receive access to a curated on-demand library of content.


text:
katja schroeder, expedition p. - NY Tech International Meetup (New York, NY)
katja schroeder, expedition p.
http://www.meetup.com/NY-Tech-International/members/10318019/
Born and raised in Germany, lived and worked in China, France and Belgium. What are you hoping to get out of this group?
Founder of Expedition PR, an agency that connects innovative companies with market influencers; Executed global, award-winning campaigns for companies of all sizes. Interest in how technology enables sustainability. Member of 27 other Meetups
17,310 NYCBizNet Members
50,862 NYC Technologists
5,049 Healthcare Innovators

value: This website is a service used to organize online groups that host in-person and virtual events for people with similar interests. It was founded in 2002 by Chairman Scott Heiferman and four co-founders.


text:
Revision as of 17:12, 7 November 2013 by Olayton2 (talk | contribs)
Retrieved from "https://familysearch.org/wiki/en/index.php?title=Beverley,_Yorkshire_Genealogy&oldid=1492650"	Category: East Riding of Yorkshire ParishesHidden category: Articles to be expanded	Navigation menu

value: This website is a nonprofit organization and website offering genealogical records, education, and software. It is operated by The Church of Jesus Christ of Latter-day Saints , and is closely connected with the church's Family History Department.


text: Sorry, no products matched "" Check your spelling Use different keywords and try again Contact your local store Compute- app-11030446-15-66961417, DC- prod-dfw3, ENV- prod-a, Ver- 46.0.0, SHA- bb3d0941156637d9a4ff37a5e0c3039d98baf1e2, Log- 96097c46-15139-156dff57a2d000 Site Information Be the first to save! Email Address Sign up Privacy Policy Stay connected Mobile apps Help Feedback MoneyCenter Privacy & Security CA Privacy Rights Terms of Use Walmart services See All Services Walmart MoneyCenter Walmart Credit Card Product Care Plans Walmart Pay Get to know us About Walmart.com Corporate Suppliers Marketplace Careers @WalmartLabs Walmart.com Terms of Use About Our Ads Affiliate Program CA Privacy Rights Privacy & Security Customer service Returns Policy Product Recalls Int’l Customers Tax Exempt Program Contact Us Feedback Store Pickup In the spotlight Expand Baby Cribs Strollers Diapers Baby Feeding Car Seats Expand Electronics Cut the Cable Computers TVs iPads & Tablets Expand Fitness Exercise Machines Vitamins Ellipticals Treadmills Fitbit Expand Keep Cool Air Conditioners Fans Swimming Pools Pool Toys Popular Products Expand International Sites Argentina Brazil Canada Chile China Japan Mexico United Kingdom © Walmart Stores, Inc. To ensure we’re able to help you as best we can, please include your reference number: Ref:

value: This website is an American multinational retail corporation that operates a chain of hypermarkets , discount department stores, and grocery stores from the United States, headquartered in Bentonville, Arkansas.


text:
Amazon.co.uk: 1 Star & Up - Kurt Vonnegut / World War II 1939-1945 / World History: Books
Books Advanced Search Best Sellers Top New Releases Deals in Books Best Books of the Month School Books Textbooks Books Outlet Children's Books Calendars & Diaries one result for Books : History : World History : World War II 1939-1945 : 1 Star & Up : Kurt Vonnegut
Slaughterhouse 5, or The Children's Crusade - A Duty-dance with Death21 Mar 1991by Kurt VonnegutPaperback£6.74PrimeGet it by Tomorrow, Jul 25More buying choices£1.34used & new(73 offers)Kindle Edition£0.00Subscribers read for £0.00.Learn more.£3.48to buyOther Formats:Hardcover, Audio Download, MP3 CD
Format Paperback (1) Author Clear Maurice Buckmaster (1) Kevin Doherty (1) Holger Eckhertz (2) Alrene Hughes (2) Kurt Vonnegut Wolfgang Faust (2) Damien Lewis (8) + See more Language English (1) Delivery Option (What's this?) Free UK Delivery by Amazon Avg. Customer Review Clear 4 Stars & Up & Up (1) 3 Stars & Up & Up (1) 2 Stars & Up & Up (1) 1 Star & Up & Up International Shipping (What's this?) AmazonGlobal Eligible Availability Include Out of Stock Unlimited One-Day Delivery and more Prime members also enjoy exclusive access to movies and TV shows, a million songs and much more. >


text:
768 Downloads (This Week)
Download docutils-0.14.tar.gz
The Best text processing system for processing plaintext documentation into useful format! +1000
web page creation windows
restructuredtext python

value: This website is a web service that offers software consumers a centralized online location to control and manage open-source software projects and research business software. It provides source code repository hosting, bug tracking, mirroring of downloads for load balancing, a wiki for documentation, developer and user mailing lists, user-support forums, user-written reviews and ratings, a news bulletin, micro-blog for publishing project updates, and other features.


text:
Tonight on Masterpiece Theatre: More Favre - NFC North Blog - ESPN
Tonight on Masterpiece Theatre: More Favre
Posted by ESPN.com's Kevin Seifert I was all set to reveal to you, dear readers, my Grand Conspiracy Theory before the pesky Tom Pelissero of the Green Bay Press-Gazette beat me to it. Here it is anyway. The short version: If Brett Favre really wanted to, he could force the New York Jets into a chain reaction of moves that could end with him landing at a seemingly impossible destination: Minnesota. When they traded Favre to the Jets last year, the Packers insisted on a "poison pill" provision that would require the Jets to forfeit multiple first-round picks if they traded him back to an NFC North team. But there is a way around that obstacle, if Favre is willing and interested. This is how it would work: Favre retires, taking his $13 million salary cap charge for 2009 off the books. (Done!) Favre waffles. (Any day now.) Favre decides he wants to play in 2009 and requests reinstatement from the Jets. (You can't rule it out.) The Jets, who are tighter against the cap than any other NFL team, don't have $13 million in cap space and would need to cut other players or at least restructure their contracts in order to squeeze him back onto the roster. And that's assuming they want him back as their starter sometime this summer. (Debatable.) The Jets can't trade Favre without first adding him to the roster. (NFL fact.) The Jets release him rather than make the necessary cap adjustments. (Very plausible.) Favre becomes a free agent. (NFL rule.) Favre considers only a handful of teams. Minnesota is one of his top choices. (Long rumored.) Favre and the Vikings agree to terms on a contract. (Voila!) There you have it. Brett Favre from retirement to Minnesota in nine easy steps.
Tags:Minnesota Vikings, Brett Favre, New York Jets, Favre retires 09, Green Bay Packers
Previous PostSimms will be patient ... or, at least he shouldNext PostPackers will honor Favre -- eventually

value: This website is the official website of ESPN. It is owned by ESPN Internet Ventures, a division of ESPN Inc.


text:
Parliamentary Spokespeople on Policies for Startups - Lean Startup Wellington (Wellington)
Parliamentary Spokespeople on Policies for Startups
Jun 24, 2014 · 12:30 PM
It's election year! Each of the significant political parties have distinct policies that will impact startups. Some areas of interest include: - Startup Visa - Taxation of Options - R&D / Incubator / Accelerator funding - NZVIF and SCIF - Another trans-pacific data cable - ... and more
Clare Curran (Labour), Gareth Hughes (Green), Vikram Kumar (Internet), and Jonathan Young (National) will each present a 5-minute pitch on their party's view, and then we'll take questions from the floor.
Dylan B. I feel that the discussions could have gone on for hours. Perhaps we should have a repeat before the election and structure it in a way that we prepare questions prior, and then either direct them to one of the spokespeople or even run a mini debate style discussion? It's also very hard when some parties don't have released policies, others haven't read each others bills etc. But was interesting all the same. Thank you Dave for facilitating. 1 · June 26, 2014 Jamie W. A little frustrating as it wasn't really designed to get real answers out of them, also that National chose not to front someone with knowledge of the space. I guess you can't expect too much from a bunch of politicians! 1 · June 24, 2014 Eleanor I would have loved to have been there today. Sorry to miss it but my current appointment is running way over schedule! I appreciate the opportunity and hope it goes well - will definitely be interesting food for thought. Eleanor 0 · June 24, 2014 Dave M. If you have specific questions for the politicians, please ask them here ahead of the meeting. Thanks! 0 · June 19, 2014 Jamie W. All political parties seem to be interested in how to make housing more affordable in Auckland, without tackling the issue of why everyone wants to be in Auckland - jobs. The tech industry has the ability to provide jobs to remote workers in any city reducing unemployment in small centres. What would your party do to encourage large companies to hire remote workers (or setup offices) outside of Auckland and Wellington. Tax breaks? Cash incentives? 1 · June 19, 2014 Jamie W. Government IT projects are often run over budget and over time, leaving the tax payer with a bill for unusable technology (for example... well all of them). Startups are uniquely able to work quickly to solve complex issues in a way that works for their users. What would a government with your party in it do to ensure IT projects were taken out of the hands of unskilled IT departments and put into the hands of the vibrant NZ tech community? 0 · June 19, 2014 62 went
David Rangi M.


text:
Anna Nicole Smith's Doctor: She Ordered Drugs
Dylan Selling Out; 'Namesake' Expands; 'October Road': Kill It Now
And in what decade was this show supposed to be set? The characters graduated from school in 1997, but are nostalgic for music of the '70s like “The Boys Are Back in Town” and REO Speedwagon’s “Take It on the Run.”


text:
SAIDA Medical AB: CEO and Executives - Bloomberg
Company Overview of SAIDA Medical AB
Key Executives for SAIDA Medical AB
Jesper Kähr No Relationships Chief Executive Officer 53
David Lennartsson No Relationships Chief Technology Officer --
SAIDA Medical AB Board Members*
SAIDA Medical AB Executive Committees*
SAIDA Medical AB CEO Compensation
To contact SAIDA Medical AB, please visit . Company data is provided by S&P Global Market Intelligence. Please use this form to report any data issues.

value: This website is an international news agency headquartered in New York City and a division of Bloomberg L.P. Content produced by Bloomberg News is disseminated through Bloomberg Terminals, Bloomberg Television, Bloomberg Radio, Bloomberg Businessweek, Bloomberg Markets, Bloomberg.com, and Bloomberg's mobile platforms. Since 2015, John Micklethwait has served as editor-in-chief.


text:
Corwin, Jeff [WorldCat.org]
Corwin, Jeff Overview
PZ7.C816873,
Jeff Corwin : a wild life : the authorized biography by Jeff Corwin(
Jeff Corwin : wild man by Kenna Bourke(
The Crocodile Hunter, the Jeff Corwin experience, and the construction of nature : examining the narratives and metaphors in television's environmental communication by David A Tschida(
Great Conversations with Richard Ellis and Jeff Corwin #1203
Jeff Corwin by University of Texas--Pan American(
100 heartbeats : the race to save earth's most endangered species by Jeff Corwin(
Living on the edge : amazing relationships in the natural world by Jeff Corwin(
The naturalist and host of the popular Animal Planet series celebrates the natural world in a richly illustrated study of the complex interrelationships that exist among wildlife in four exotic ecosystems--the Brazilian Pantanal, Arizona's Sonoran Desert, the Costa Rican Tropical Rainforest, and the East African Savannah of Tanzania
Your backyard is wild by Jeff Corwin(
The great Alaska adventure! by Jeff Corwin(
During a week-long trip to Alaska with his scientist-parents and his sister, nine-year-old Benjamin observes the effects of climate change in preparation for writing a research paper for school
Snakes by Jeff Corwin(
Jeff Corwin describes different types of snakes
The extraordinary Everglades by Jeff Corwin(
Read along as animal expert Jeff Corwin tells you about the Florida Everglades and his experiences there. Over forty photos bring this fascinating region to life! From the American alligator of the freshwater marsh to the West Indian manatee of the Florida Bay, kids will love learning about the captivating plants and animals in the Everglades
Creepy-crawly critters by Jeff Corwin(
"Read along as animal expert Jeff Corwin tells you all about the creepy-crawly animals that live in the southwestern desert. Over forty photos help bring this fascinating region to life! From the giant vinegaroon and velvet ant to the trapdoor spider and desert hairy scorpion, kids will love learning all about the captivating creatures that call the desert home."--Amazon.com
The wild, wild Southwest! by Jeff Corwin(
Budding naturalists Lucy, Benjamin and Gabe camp in the Gila National Forest in New Mexico, and travel to White Sands National Monument and Carlsbad Caverns, exploring their environment and becoming Junior Rangers along the way
Television personality Jeff Corwin takes the reader on an expedition to India to learn about the diverse wildlife found there
Into wild Galápagos
Television personality Jeff Corwin takes the reader on an expedition through Tanzania, and introduces some of the diverse wildlife found there
Television personality Jeff Corwin takes the reader on an expedition through the Florida Everglades and introduces some of the wildlife found there
Television personality Jeff Corwin takes the reader on an expedition to Namibia to learn about the diverse wildlife found there
Snakes! face-to face by Jane Hammerslough(
"...Join Jeff for an amazing trip around the world as he searches for as many of these fascinating reptiles as he can find
Join Jeff as he searches for interesting and unusual animals from around the globe, including such places as Southeast Asia, India, Africa, and beyond
Television personality Jeff Corwin takes the reader on an expedition around the world to investigate different varieties of snakes
Into wild Arizona by Elaine Pascoe(
Television personality Jeff Corwin takes the reader on an expedition through the harsh environment of Arizona, and introduces some of the diverse wildife found there
The Crocod
Animal Planet (Television network) Discovery Education (Firm) Discovery Channel (Firm) Discovery Communications, Inc Blackbirch Press Pascoe, Elaine Popular Arts Entertainment Francis, Guy Illustrator Sinsel, Dawn Hammerslough, Jane Author Useful Links
Wikipedia Jeff Corwin
Africa, Eastern Alaska Animals Arizona Arthropoda Biologists Bornean orangutan Borneo California Camping Climatic changes Costa Rica Desert animals Desert biology Ecology Endangered species Environmental degradation Families Florida Florida--Everglades Galapagos Islands Global environmental change Herpetologists India Indonesia Llanos Monkeys Namibia Natural history Nature--Effect of human beings on Nature study New Mexico New Mexico--Carlsbad Caverns National Park New Mexico--Gila National Forest New Mexico--White Sands National Monument New York (State)--New York North America--Sonoran Desert Rain forests Savannas Snakes Southwest, New Tanzania--Zanzibar Tasmania Travel United States Vacations Venezuela Wildlife conservation Wildlife conservationists Zoology Alternative Names
Corwin, Jeffrey S.

value: This website is a union catalog that itemizes the collections of 15,637 libraries in 107 countries that participate in the OCLC global cooperative. It is operated by OCLC, Inc.


text:
BBB Business Profile | Schmucker's L P Gas, Inc.
Home > Indiana > Nappanee > Propane > Schmucker's L P Gas, Inc.
Schmucker's L P Gas, Inc.
(574) 773-3214
890 US Highway 6
Nappanee, IN 46550-9562
Business Incorporated: 03/14/1972 in IN
Principal: Mr. Keith Klotz, Owner
Customer Service: Ms. Carla Lotz, Office Manager

value: This website is a private, nonprofit organization whose self-described mission is to focus on advancing marketplace trust, consisting of 106 independently incorporated local BBB organizations in the United States and Canada, coordinated under the International Association of Better Business Bureaus  in Arlington, Virginia.The Better Business Bureau is not affiliated with any governmental agency. Businesses that affiliate with the BBB and adhere to its standards do so through industry self-regulation.


text:
Trust in the Balance: Building Successful Organizations on Results, Integrity and Concern: Amazon.co.uk: Robert B. Shaw: 9780787902865: Books
BooksAdvanced SearchBrowse GenresBest SellersNew & Future ReleasesPaperbacksTop OffersTextbooksAudiobooksSell Your Books Trust in the Balance
and over 2 million other books are available for Amazon Kindle . Learn more £22.06
Trust in the Balance: Building Successful Organizations on Results, Integrity and Concern
– 11 Mar 1997
› Visit Amazon's Robert B. Shaw Page
Kindle Edition £20.96
Paperback £22.06
23 New from £12.68
3 Collectible from £27.95
Acquire the best asset of all Your business is either enhanced by the presence of trust or held back by the presence of distrust. Robert Shaw gives conviction and advice to the leader who recognizes that trust becomes a performance multiplier only when the leader is prepared to go first. –– Craig E. Weatherup, president, PepsiCo, Inc. If you′ve never examined how trust affects your organization, maybe you should. In this engaging book, Robert Shaw moves past the right thing to do argument and focuses on trust as a critical issue successful managers cannot take for granted. He shows how lack of trust is compromising more and more organizations in today′s highly competitive environment. And he offers a way out. Drawing on a variety of examples from real business situations, Shaw explains trust′s increasing importance at four key levels: individual credibility, one–to–one collaboration, team effectiveness, and organizational vitality. He then provides an assessment survey to help you determine how you and your organization measures up trust–wise, and offers action steps for overcoming trust dilemmas such as those that arise during reinvention efforts. A vital handbook for leaders, change agents, and anyone interested in building high trust for high performance.
See all free Kindle reading apps Start reading Trust in the Balance on your Kindle in under a minute.
Publisher: John Wiley & Sons; 1st. Ed edition (11 Mar 1997)
ISBN-10: 0787902861
ISBN-13: 978-0787902865
Product Dimensions: 15.7 x 2.4 x 23.8 cm
Amazon Bestsellers Rank: 1,908,021 in Books (See Top 100 in Books)
"I believe there′s no neutrality in business (for example, you′re either gaining market share or losing it). Likewise, your business success is either enhanced by trust or held back by distrust. Robert Shaw gives conviction and advice to the leader who recognizes that trust becomes a performance multiplier only when the leader is prepared to go first." ––Craig E. Weatherup, CEO, Pepsi–Cola Company "Trust in the Balance is an absorbing discussion of our desperate need to attAnd to the human necessity to feel safe within and without organizations. Shaw has produced an extremely readable and practical guide to paving a trail of trust into the twenty–first century." ––Jim Kouzes, coauthor, The Leadership Challenge and Credibility, and chairman and CEO, TPG/Learning Systems "The relationship between organization effectiveness and organization climate is a major issue for leaders and culture setters. Robert Shaw has pinpointed the essential linchpin––trust. His practical yet profound guide on how to develop and maintain a high–trust organization will be a welcome addition to any manager′s bookshelf." ––Richard Beckhard , coeditor, The Organization of the Future, and principal, Beckhard Associates "Trust is a critical component in managing change and executing strategy, both so necessary to driving bottom–line results. The dilemma for managers at all levels is that when we need more trust in our organizations to achieve our goals, we are experiencing a loss of trust. Trust in the Balance is a must–read for managers and leaders who want to better understand how to build trust in their organizations and achieve a stronger bottom–line performance." ––Eileen Kraus, chairman, Fleet Bank Connecticut
Unlike most discussions about trust, Robert Shaw moves past ?the right thing to do? argument and focuses on trust as a critical, hard–edged issue that successful managers cannot afford to take for granted. He shows how lack of trust is compromising more and more organizations in today′s highly competitive business environment.This engaging book describes how to design organizations that promote a high level of trust. Drawing on a variety of examples from real business situations, Shaw explains trust′s increasing importance at four key levels: individual credibility, one–to–one collaboration, team effectiveness, and organizational vitality.Shaw′s high trust design is based on two critical rules: trust must have checks and balances, and top management leadership is essential for trust to spread throughout the organization.Championing the notion of mutual interdepAndence based on trust, Shaw′s model will be especially helpful for multinational companies and virtual organizations that have complex, loosely coupled, and constantly revolving networks of individuals and teams.If you′ve never examined how trust affects your organization, maybe you should. In this engaging book, Robert Shaw moves past the "right thing to do" argument and focuses on trust as a critical issue successful managers cannot take for granted. He shows how lack of trust is compromising more and more organizations in today′s highly competitive environment. And he offers a way out. A vital handbook for leaders, change agents, and anyone interested in building high trust for high performance.
The reality of today's business environment is clear: embrace change or die. Read the first page
1418937000
Clear, Interesting and Practical
Robert Bruce Shaw addresses an issue that is often either neglected or handled with bromides. To its credit, Shaw's book does not overpromise by announcing a magical ten day program to restore trust. Instead, it provides an interesting variety of examples and succinctly shows how the organizations that have succeeded in establishing high levels of trust differ from their less adept colleagues. While doing so, Shaw does not engage in preachy denunciations. The overall tone of the book emphasizes creating solutions rather than affixing blame.In that spirit, "Trust in the Balance" contains surveys of the key factors affecting trust in the workplace; surveys that can be easily used by the reader to spot problems in his or her organization. Each chapter has meaty analysis and specific guidance on the steps that should be taken to address particular trust problems. There is also a helpful "Trust-Building Resources" section in the back of the book.One is fortunate to glean one good idea from many business books. Shaw's book contains many excellent points and observations. Anyone seeking a no-nonsense analysis of how to handle the "trust issue" should read this book. It will be well worth your time.
We talk a lot about "trust" in my organization, but it's always in vague terms. You get the feeling that everyone has their own definition, which they assume everyone shares. This book breaks trust down into easily understood components, makes a bottom-line business case for improving your relationships in the workplace, and then helps you do just that. It focuses on behaviors, not motivations, and therefore gives you a framework for talking about trust without accusing or blaming. It's one of the most useful business books I've read in a long time.
Trust has replaced loyalty as the primary bond within organizations
Trust in organizations is growing increasingly rare. With so many business closures, massive layoffs, financial scandals, ethics violations, and brazen executive failures, trust is pretty hard to come by. So how do businesses regain the trust of their employees and communities? The author, Robert Shaw, has some good advice on what can be done. With a PhD. From Yale University and dozens of years consulting to Fortune 500 companies, he's been through enough to be considered an expert on the subject. The bonus for everyone is that he shares much of his wisdom with us in Trust in the Balance, so that we don't have to make the same mistakes.Shaw's writing style is clean and easy to follow. The book is laid out well, with great examples and tools for executive teams to use in their companies. He clearly describes what his experience and research has concluded - that organizational trust is anchored on three imperatives: results, integrity, and concern. It is through these that great leaderships and great organizations design are used to achieve great results.I like the book for several reasons: it addresses change management, teams, leadership issues, ethics, and hiring practices. All areas where trust can be earned or lost. You would consider reading this book if you have a need in any one of these areas for your organization. The book as a detailed trust assessment survey, as well as a Leadership Survey. Both can be used to understand where your organization is now, and begin the process of improvement. In the area of improvement, Shaw provides great examples of how to regain trust if it is low or lost. And given the nature of our highly competitive global business environment, Shaw goes so far as to declare that "trust will replace loyalty as the primary bond within organizations". I think he's right, considering that lifetime employment contracts are dead.If you are blessed enough to work in a high-trust organization, this book will serve you well in learning how to capitalize on trust to create collaborative capital. If you work in a low-trust company, Trust in the Balance will show you what works (and what does not) to rebuild the trust needed to survive in today's constantly changing business environment.


text:
Patent US6470883 - Nasal epidermal lifting mechanism - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsAn epidermal lifting mechanism (10) comprising at least one strip of flexible material (50), first and second end portions (60), a middle portion (70), adhesive material (40), a plurality of resilient spring structures (20,22,24) extending through the at least one strip of flexible material, and a flap...http://www.google.com/patents/US6470883?utm_source=gb-gplus-sharePatent US6470883 - Nasal epidermal lifting mechanismAdvanced Patent SearchPublication numberUS6470883 B1Publication typeGrantApplication numberUS 09/180,572PCT numberPCT/US1997/000868Publication dateOct 29, 2002Filing dateJan 17, 1997Priority dateMay 10, 1996Fee statusPaidAlso published asCA2253505A1, CA2253505C, DE69726885D1, DE69726885T2, DE69732930D1, DE69732930T2, DE69732931D1, DE69732931T2, DE69738144D1, EP0955968A1, EP0955968A4, EP0955968B1, US6570051, US6603051, US6982359, US7067710, US7186878, US7541510, US20040153019, US20050027230, WO1997042918A1Publication number09180572, 180572, PCT/1997/868, PCT/US/1997/000868, PCT/US/1997/00868, PCT/US/97/000868, PCT/US/97/00868, PCT/US1997/000868, PCT/US1997/00868, PCT/US1997000868, PCT/US199700868, PCT/US97/000868, PCT/US97/00868, PCT/US97000868, PCT/US9700868, US 6470883 B1, US 6470883B1, US-B1-6470883, US6470883 B1, US6470883B1InventorsWallace J. BeaudryOriginal AssigneeWallace J. BeaudryExport CitationBiBTeX, EndNote, RefManPatent Citations (34), Referenced by (13), Classifications (19), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetNasal epidermal lifting mechanism
US 6470883 B1Abstract
An epidermal lifting mechanism (10) comprising at least one strip of flexible material (50), first and second end portions (60), a middle portion (70), adhesive material (40), a plurality of resilient spring structures (20,22,24) extending through the at least one strip of flexible material, and a flap mechanism (80) integral with the middle portion.
What is claimed is: 1. An epidermal lifting mechanism for use and application to a nose of human being, the epidermal lifting mechanism providing a lifting force over a predetermined area comprises the epidermal area located to either side of a bridge of a person's nose, the epidermal lifting mechanism comprising:
at least one strip of flexible material having a first side and a second side, the strip further including a first end portion and a second end portion and a middle portion; the first side of the strip material including an adhesive material; the first end portion and the second end portion being each positioned to cover a predetermined portion of the epidermis located adjacent each side of the bridge of the nose; the strip of material including a plurality of resilient spring structures extending therethrough; the middle portion including a first edge and a second, oppositely disposed, edge; the first edge and the second edge of the middle portion including a flap mechanism integral thereto; whereby the flap mechanism is capable of being folded over the first side of the strip material to cover the middle portion of the first side of the strip material. 2. The epidermal lifting mechanism of claim 1 wherein the adhesive material is a hydrocolloid non-irritating adhesive.
3. The epidermal lifting mechanism of claim 1 wherein the epidermal lifting mechanism of claim 1 is adapted for use in combination with the bridge of said nose;
the bridge of said nose providing a fulcrum point. 4. The epidermal lifting mechanism of claim 1 wherein the first end and the second end have a plurality of slits extending through at least the first side of the strip material.
5. The epidermal lifting mechanism of claim 4 wherein the slits have a U shape.
6. The epidermal lifting mechanism of claim 1 wherein the plurality of resilient spring structures comprise a stack spring mechanism composed of at least two leaf spring structures stacked one on top of the other.
7. The epidermal lifting mechanism of claim 1 wherein the flap structures are folded over the first side and a fulcrum point is produced.
8. The epidermal lifting mechanism of claim 1 wherein at least one of the first and second end portions of the strip has a predetermined shape.
9. The epidermal lifting mechanism of claim 8 wherein the shape of at least one of the first and second end portions is substantially triangular.
10. A method for improving air flow into and out of a human body through the nasal passages of a human nose using an epidermal lifting mechanism for providing a lifting force over a predetermined area of the epidermis located to either side of the bridge of the nose, the epidermal lifting system comprising:
at least one strip of flexible material having a first side and second side the strip further including a first end portion and a second end portion and a middle portion; the first side of the strip material including an adhesive material; the first end and second end being positioned to cover a predetermined portion of the epidermis located to each side of the bridge of the nose; the strip of material including a plurality of resilient spring structures extending therethrough; the middle portion including a first edge and second edge; the first edge and the second edge of the middle portion including a flap mechanism integral thereto; whereby the flap mechanism is capable of being folded over the first side of the strip material to cover the middle portion of the first side of the strip material; the method comprising folding the flap mechanism over the middle portion of the strip material; positioning the first and second end portions of the epidermis of the nose. Description
This application claims benefit of Provisional application 60/017,258, filed May 10, 1996.
These layers of materials include without limitation, a silicone coated release liner, an adhesive system to adhere the epidermal lifting mechanism to the nose, a top layer of material, and a spring mechanism. Obviously, the release liner is removed prior to placing the epidermal lifting mechanism on the bridge of the nose. The adhesive system, just like the adhesive system for the dressing mechanism, can include a pressure sensitive hypo-allergenic acrylic or a hydrocolloid material but any suitable adhesive system may be used. The top layer of material can be either a non-woven material or a material with some stretch characteristics such as a three mil polyurethane film. The spring mechanism may comprise a polyester film (usually 2 mils to 8 mils in thickness but any suitable thickness range may be used, e.g., 1-15 mils would be suitable as an alternative thickness range but any thickness range can be used depending upon the desired use and durability) laminated to a spun bonded polyester material. The spun bonded polyester material may or may not be coated with a pressure sensitive adhesive. The spring mechanism may be a plurality of materials which are laminated together.
Alternatively, the present invention may be structure which may be used as a nasal dilator wherein the nasal dilator comprises two separate pieces each capable of acting independently of the other. Each piece having at least one nose pod and an elastic member or strip attached to that nose pod. The elastic member or strip having a first end and a second end with the nose pods being attached to the first end. The elastic member having a second end attached to an anchor mechanism. The anchor mechanism having a first side and an adhesive material included thereon. The nose pod having the previously described structure for a nose pod. The anchor mechanism being applied to a predetermined area on a persons cheek a sufficient distance away from the side of the persons nose so that the nose pod, coupled to the elastic member, may be applied to the outside surface or epidermis surrounding the nasal passage of a persons nose and the elastic member retracting between the anchor mechanism and the nose pod causing lifting of the epidermis on the side of the nose and thereby increasing the opening of the nasal passage way. Accordingly, the present invention may be considered an epidermal positioning mechanism having an elastic material coupled to a first end piece and a second piece. The first and second end pieces each having at least one side including an adhesive material. Preferably, but not necessarily, depending upon the application of the present invention, at least one of the end pieces would be the anchoring structure or mechanism while the other end piece acts as a lifting end piece.
Additionally, the mechanism of the present invention could be described as epidermal lifting mechanism having anchor/lifting portions, connected via an elastic or stretchable material, and include an adhesive surface. The anchor/lifting portions being such that each portion, depending upon where it is applied, may act as either an anchor portion or a lifting portion. The anchor/lifting portions having a plurality of incisions or cuts of predetermined shape which divide each anchor/lifting portion into a plurality of adhesive areas. This division of the anchor/lifting portion into a plurality of adhesive areas allows the anchor/lifting portion adhesive areas to be divided such that after a first anchor/lifting portion is applied to the desired epidermal location a first predetermined portion of that first anchor/lifting mechanism may be peeled away and leave a second predetermined portion, having a predetermined shape due to the plurality of cuts or incisions, in place on the epidermal location. Subsequently, a second anchor/lifting portion, connected to the first anchor/lifting portion via the elastic material, may be applied to a second predetermined or desired epidermal location so that the elastic material, is stretched a desired amount. The second anchor/lifting portion, if it is substantially similar to the first anchor/lifting portion may be applied to the epidermis so that it may be peeled away and leave a second predetermined portion, having a predetermined shape due to the plurality of cuts or incisions, in place on the epidermal location. Accordingly, the first and second anchor/lifting portions may act as a separate anchor point and lifting point or as separate anchor points or as separate lifting points and the elastic material may simply be used to supply tension between the points or it may be used to apply a material such as a medicine to the epidermis located between the two points or it may be used to supply tension and apply a material between the two points, etc.
FIG. 26 is a side elevational view showing the embodiment of either FIG. 21 or
FIG. 19 being used on persons nose as a nasal dilator to enhance breathing. The embodiment of FIG. 19 is believed to be preferable to the embodiment of FIG. 21 for this purpose although either could be used.
FIG. 68 is a view from line 68�68 of FIG. 69.
FIG. 77 is a cross-sectional view from line 77�77 of FIG. 84.
FIG. 78 is a cross-sectional view from line 78�78 of FIG. 86.
FIG. 79 is a cross-sectional view from line 79�79 of FIG. 86.
FIG. 81 is a view taken from line 81�81 of FIG. 39.
FIG. 82 is a view taken from line 82�82 of FIG. 40
The present invention indicated generally by the reference numeral 10 includes a two part multi-level leaf spring 20 as shown in FIG. 2. The two part multi-level leaf spring 20 comprises a pair of spring laminates 22 and 24. Each spring laminate 22 and 24 is manufactured from a 2 mil to 8 mil polyester film laminated to a spun bonded polyester material. The spun bonded polyester material may or may not be coated with a pressure sensitive adhesive. The spring laminates 22 and 24 are laminated together.
Now referring to FIGS. 4 and 18, the material layers of the invention 10 include a silicone coated release liner 30, an adhesive system 40 to adhere the epidermal lifting mechanism 10 to the nose, a top layer of material 50, and the two part spring laminate 20. The top layer 50 is composed of two layers of material 50A and 50B and contains the springs 24 and 22 there between as shown in FIG. 18. The release liner 30 is removed prior to placing the mechanism 10 on the bridge of the nose. The adhesive system 40 can either be a pressure sensitive hypo-allergenic acrylic or a hydrocolloid system. The top layer of material 50 can be either a non-woven material or a material with some stretch characteristics such as a 3 mil polyurethane film.
Alternative embodiments of the invention 10 are shown in FIGS. 9 through 14. In FIG. 9, the shape of the pods 60 are shown to be rectangular instead of round. In FIG. 10, the horseshoe shaped cuts or incisions 64 have been removed and additional slits 66 and 66A have been added. In this embodiment, when the flaps 80 are not folded over, slits 66A mechanically adjust the peeling action to a shear action thereby allowing greater adhesion over the predetermined epidermal area. Additionally, in this embodiment a cut could be made along line 100 to divide the invention 10 into sections 13 and 15 whereby section 13 could be discarded and section 15 could be used as a dilator for only one side of a persons nose. Additionally, two section 15's could be combined to apply to either side of a persons nose and thereby dilate each nasal passage independent of the other. Additionally, this embodiment includes springs 24 and 22 which are of different lengths as shown in the FIGS. 3 and 18. The ends of springs, shown by lines 83 and 83A, provide the main lifting force as the springs 24 and 22 attempt to spring back into position. Therefore, due to the mechanical relationship of springs 24 and 22 compound the lifting force applied at their ends 83 and 83A.
With respect to the embodiment of the invention shown in FIG. 19 it should be noted that U shaped cuts or incisions 64 are also illustrated. Again, these cuts or incisions may be of any shape although the U or horseshoe shape is preferred however the embodiment disclosed in FIG. 19 could function without these U shaped cuts or incisions 64.
Referring now to FIGS. 28, 29 and 30; FIG. 28 shows the nose 19 and the nasal passages 119 in cross sectional view. The nasal passages in FIG. 28 being shown open but absent the use of any nasal dilator. In FIG. 29 the same cross sectional view is shown but the nose 19 and in particular the nasal passages 119 are shown being in a state of relatively little airflow through the nasal passages 119. FIG. 30 illustrates a cross sectional view using a nasal dilator of the present invention 10 wherein the nasal passages 119 of the nose 19 are held substantially open for airflow through the nasal passages 119.
Alternatively, as illustrated in FIGS. 31, 32, and 33, the mechanism of the present invention could be described as epidermal lifting mechanism having anchor/lifting portions 120, connected via an elastic or stretchable material 110, and include an adhesive surface 121. The anchor/lifting portions 120 being such that each portion 120, depending upon where it is applied, may act as either an anchor portion 120 or a lifting portion 120. The anchor/lifting portions 120 having a plurality of incisions or cuts 64 of predetermined shape (e.g., U shaped as illustrated in FIGS. 31�33) which divide each anchor/lifting portion 120 into a plurality of adhesive areas 121 a and 121 b. This division of the anchor/lifting portion 120 into a plurality of adhesive areas 121 allows the anchor/lifting portion adhesive areas 121 to be divided such that after a first anchor/lifting portion 123 is applied to the desired epidermal location a first predetermined portion 121 c of that first anchor/lifting portion 120 may be peeled away and leave a second predetermined portion 121 d, having a predetermined shape due to the plurality of cuts or incisions 64, in place on the epidermal location. Subsequently, a second anchor/lifting portion 125, connected to the first anchor/lifting portion 123 via the elastic material 110, may be applied to a second predetermined or desired epidermal location so that the elastic material 110 is stretched a desired amount. The second anchor/lifting portion 125, if it is substantially similar to the first anchor/lifting portion 123 may be applied to the epidermis so that it may be peeled away and leave a second predetermined portion 121 d, having a predetermined shape due to the plurality of cuts or incisions 64, in place on the epidermal location. Accordingly, the first and second anchor/lifting portions 123 and 125 may act as a separate anchor point and lifting point or as separate anchor points or as separate lifting points and the elastic material 110 may simply be used to supply tension between the points 123 and 125 or it may be used to apply a material such as a medicine to the epidermis located between the two points or it may be used to supply tension and apply a material between the two points, etc. The purpose of this alternative embodiment to take advantage of the multiple shear points 200 created using this design to enhance the adhesion of this embodiment to the desired epidermal location so that the anchor/lifting portions 120 maintain proper adhesion at their desired locations.
Referring now to FIGS. 35 and 36 another alternative embodiment of the present invention may be observed. The dressing structure 300 is comprised of a multiple layer or laminated material 302 at its anchor sections 301 and 303 and a latex rubber 321 at its second central section 325. The laminated material includes a top surface 315 made of TYVEC brand material and a bottom surface 319 also made of the same material but coated with a hypo-allergenic acrylic adhesive 327 and covered with a silicone release liner. The anchor sections 301 and 303 have and adhesive bottom layer 311 for adhering to an epidermis 11. The laminated material 302 has a channel or slit 313 into which margins 317 of the latex rubber 321 are engaged. The margins 317 include openings 304 and the channel 313 includes the adhesive 327 which extends through the openings 304 from the bottom 319 to the top 315. This creates a series of adhesive openings 304 which act as plugs which extend through the openings 304 and couple the upper layer 315 to the lower layer 319 effectively holding the non-elastic TYVEC material together so that the latex material 321 is effectively locked into the channel 313 and cannot easily be removed by tension when stretched. Accordingly, margins 317 are secured to the anchor sections 301 and 303 by at locking section 317 a. Still referring to FIG. 35 and FIG. 36 the center section 325 may be observed to include a TYVEC brand material stabilizing section 323 which is bonded to a gauze pad 314 via openings 316, in the latex 321 which contain adhesive 327. The adhesive 327 extending in a plug like manner from the pad 314 to the stabilizing section 323. This creates a bandage or dressing structure which is suspended by the latex 321 between the anchoring sections 301 and 303. Further, as illustrated by FIGS. 51 and 52 the shape of the TYVEC top layer 323 need not be rectangular but can be of any design, e.g., round. When this embodiment is applied over a wound or other predetermined area of the epidermis 11 the latex material 321 is stretched between the two anchoring sections 301 and 303 which causes the latex 321 to act much like a leaf spring and apply a positive pressure downward through the pad 314. Accordingly, the wound to which this device 300 is applied will have a positive pressure against it. It is well known in first aid that pressure applied to a wound will help reduce bleeding. The present invention thus provides an effective bandage which will also effectively limit bleeding from the wound. Further, the positive down pressure will effectively maintain contact of the pad 314 with the wound or other predetermined area despite movement of the surrounding epidermis 11.
Referring to FIGS. 41 and 42, and FIGS. 45 and 46, another alternative embodiment to the present invention is illustrated. This embodiment is substantially the same structurally as the embodiments disclosed in FIGS. 35 and 36 with the exception that two additional anchors sections 305 and 307 have been added. Also, the stabilizing section 323 is round rather than rectangular in shape. The pad 314 is coupled to the stabilizing section as previously described. FIGS. 40 and 41 illustrate that tension adjustment sections 412 need not all apply the same level of tension or be stretched equally. Further, the anchor sections 301,303, 305, and 307 may be moved relative to each other while the center section 325 is maintained in position over the desired treatment area. Accordingly, when the present invention is applied over an area of the body that is subject to movement such as an elbow, knee, or hand the center section 325 will maintain its position over the wound or area to which it is desired to apply treatment.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS2018517Apr 1, 1933Oct 22, 1935Edward FetterElastic adhesive bandageUS4120304Oct 12, 1976Oct 17, 1978Moor Burdette JNaso-gastric tube holderUS4213452May 3, 1979Jul 22, 1980The Denver Splint CompanyCompound splint and kitUS4605005Oct 16, 1984Aug 12, 1986Kells Medical, Inc.Wound closure device and method for using sameUS4702736May 3, 1985Oct 27, 1987Glenda KaltUniversal clampUS4738662Dec 27, 1985Apr 19, 1988Glenda KaltUniversal clampUS4742826Apr 7, 1986May 10, 1988Mclorg Anthony BCicatrisive strip with biasUS4823789Feb 16, 1988Apr 25, 1989Genetic Laboratories, Inc.Nose tube anchoring stripUS4825866Aug 27, 1987May 2, 1989Robert PierceWound closure deviceUS4838878Mar 23, 1987Jun 13, 1989Glenda G. KaltUniversal clampUS4919654Aug 3, 1988Apr 24, 1990Kalt Medical CorporationIV clamp with membraneUS4932943May 23, 1988Jun 12, 1990Hollister IncorporatedNasogastric tube holding deviceUS4966590Dec 13, 1988Oct 30, 1990Kalt Medical CorporationIV Clamp with membrane dressingUS4986815Dec 11, 1989Jan 22, 1991Hollister IncorporatedNasogastric tube holding deviceUS5022389May 25, 1990Jun 11, 1991Cornucopia Medical Products, Inc.Nasal splint deviceUS5156641 *Mar 7, 1990Oct 20, 1992Mayo Foundation For Medical Education And ResearchNaso-gastric catheter anchor systemUS5172688Aug 9, 1991Dec 22, 1992Innovative Medical Design Corp.Nasal-gastric tube holderUS5234462Aug 29, 1991Aug 10, 1993Tufts UniversityMethod and kit for accelerating the closing of open skin woundsUS5336219Mar 23, 1993Aug 9, 1994Medi-Flex Hospital Products, Inc.Skin closure systemUS5476091Jul 5, 1994Dec 19, 1995Creative Integration & Design, Inc.Dilator for anatomical outer wall tissues which is adhesively mountedUS5534010Oct 29, 1992Jul 9, 1996Peterson; Meldon L.Closure for a skin wound or incisionUS5546929Jul 7, 1995Aug 20, 1996Muchin Jerome DNasal dilatorUS5549103Sep 30, 1994Aug 27, 1996Creative Integration & Design, Inc.Nasal dilator having an adhesive void to allow relative movementUS5553605Aug 31, 1995Sep 10, 1996Muchin Jerome DTransparent external nasal dilatorUS5609150 *Jan 22, 1996Mar 11, 1997Maged; Jeffrey M.Method for dilating respiratory passagesUS5611333 *Dec 15, 1995Mar 18, 1997Creative Integration & Design, Inc.Dilator with peel force reducing structureUS5702371 *Apr 27, 1995Dec 30, 1997Venetec International, Inc.Tube fitting anchoring systemUS5788660Oct 20, 1997Aug 4, 1998Resnik; Julie M.Anchor for surgical dressingUS5843025Apr 23, 1996Dec 1, 1998Shaari; Christopher M.Bandage with external anchorES289561A * Title not availableGB2251796A * Title not availableWO1988003788A1Nov 18, 1987Jun 2, 1988Patent Dev & Invest SaNasal devicesWO1992022340A1Jun 2, 1992Dec 23, 1992Creative Integration & DesignNasal dilatorWO1994023675A1Apr 8, 1994Oct 27, 1994Creative Integration & DesignNasal dilator* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS6631714 *Jun 29, 2001Oct 14, 2003Cns, Inc.Tissue dilator devices, methods of fabrication of tissue dilators, and methods of use for tissue dilatorsUS7175645 *Nov 12, 1999Feb 13, 2007Winease LlcNasal support device for domestic mammals and methodUS7793661 *Jul 11, 2008Sep 14, 2010Macken John AMethod and apparatus for treatment of snoring and sleep apneaUS8047201Apr 27, 2006Nov 1, 2011Innovation Alley Design, LlcNasal dilatorUS8051850 *Mar 10, 2006Nov 8, 2011Resmed LimitedNasal dilatorUS8182505Aug 2, 2010May 22, 2012Winease LlcNasal support device and methodUS8616198Oct 4, 2011Dec 31, 2013Innovative Medical Equipment, LlcNasal dilatorUS8795314Aug 28, 2013Aug 5, 2014Winease LlcNasal support device and methodUS20100298861 *Nov 7, 2006Nov 25, 2010Cns, Inc.Delayed Action Spring Force Element for Nasal DilatorsUS20110000483 *Apr 30, 2010Jan 6, 2011Matthias Joseph AExternal nasal dilatorUS20120221044 *May 9, 2012Aug 30, 2012Canica Design, Inc.Dynamic Tensioning System and MethodEP1948291A2 *Nov 7, 2006Jul 30, 2008CNS, Inc.Delayed action spring force element for nasal dilatorsWO2007056715A2Nov 7, 2006May 18, 2007CnsDelayed action spring force element for nasal dilators* Cited by examinerClassifications U.S. Classification128/200.24, 128/207.18International ClassificationA61F2/82, A61F5/56, A61F13/00, A61F5/08, A61F13/12, A61F13/02, A62B9/06Cooperative ClassificationA61F13/02, A61F13/126, A61F2013/00119, A61F5/08, A61F2013/00127, A62B9/06European ClassificationA61F5/08, A61F13/02, A61F13/12, A62B9/06Legal EventsDateCodeEventDescriptionOct 30, 2013FPAYFee paymentYear of fee payment: 12Mar 23, 2010FPAYFee paymentYear of fee payment: 8Mar 20, 2006FPAYFee paymentYear of fee payment: 4Jun 8, 2004CCCertificate of correctionRotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services