text:
Men's Nunn Bush Sommerset Brown Leather Today $71.95 Vudu Shoes Men's 'Mark' Leather Casual Shoes Today $98.99 Hush Puppies Men's 'Outclass Oxford' Leather Casual Shoes - Extra Wide Today $139.99 Men's Propet PedWalker 1 White Today $89.95 Men's Propet Vista Walker Black Smooth Today $82.95 Men's Nunn Bush Drumlin Prairie Beige Leather Today $85.00 Men's Nunn Bush Drumlin Brown Tumbled Leather Today $85.00 Men's Nunn Bush Hopkins Chestnut Leather Today $85.00 Rockport Men's 'Grayder' Leather Athletic Shoe (Size 7.5 ) Sale $72.89 Was $80.99 Men's Island Surf Co. Marco Beige Today $39.95 Men's Skechers Cool Cat Dark Brown Crazyhorse (CDB) Today $57.95 Men's Nunn Bush Victor Brown Nubuck Today $68.00 Women's Bellini Caracus Black/White Polyurethane Today $64.95 Men's Apex Ambulator Biomechanical Boat Shoe Brown Leather Today $134.95 Women's Bellini Galena III Red Patent Polyurethane Today $59.95 Women's Bellini Caracus Blonde Multi Polyurethane Today $64.95 Men's Apex Ambular Biomechanical Oxford Brown Smooth Leather Today $134.95 Fagor 2-in-1 Express 4-quart Slow Cooker/ Pressure Cooker Sale $66.59 Was $73.99 Compare $110.94 Save 40% (3) Next Sponsored Links What's This?
http://www.overstock.com/Clothing-Shoes/Mens-Propet-Vista-Walker-Brown-Smooth/7333934/product.html?recommendation_id=d1d212b0-85ab-41e5-90d8-f2dbd86c11b0&rcmndsrc=2&atcError=3

type: global

value: This website is an American internet retailer selling primarily furniture headquartered in Midvale, Utah, near Salt Lake City.


text:
website compatible browsers Freelancers and Jobs - Freelancer - Page 2
Looking for website compatible browsers Freelancers or Jobs?
Need help with website compatible browsers? Hire a freelancer today! Do you specialise in website compatible browsers? Use your website compatible browsers skills and start making money online today! Freelancer is the largest marketplace for jobs in the world. There are currently 17,764 jobs waiting for you to start work on!
website compatible browsers Jobs:
...investor and have designed a? 'sell your house quick' website? [www.elitepropertybuyers.com][1] that generates...problem I have is that the website doesn't view correctly on? web browsers (especially Firefox) apart...can somehow make it compatible and view correctly with most if not all web browsers especially Firefox
http://justwatchthefireworks.com/test/studiomayfield/collections/bjc/
*also I need someone to make each page in collections (vivid, kita ku, l...
...help me with my website. For some reason some people are telling me that my website http://tinyurl.com/yd8y26t...& Win XP. Appears fine in FireFox and other browsers. I think it should be a very quick fix for some
...if you cannot create an app to work on desktop browsers, iOS & Android.
Please do not bid on this project...interested in adding a product configurator to our website for the customization of letterman/varsity jackets
480-478-2926 Hi, My website drop down menus (2) only work properly with internet explorer! I would...likr my drop down menues to be compatible with all browsers. Website: <http://www.bonifacios.com/>
XML, Script Install, Translation, Project Management, Engineering, Software Architecture, Software Testing, Shell Script, Amazon Web Services
like the http://m.yahoo.com
Java, Javascript, Website Design, Mobile Phone, HTML
Website to work on all browsers
My website doesnt seem to be working properly on Firefox, it works perfectly on Safari. My website is...lkgriffin.com. I need someone to make it compatible with all browsers.
Website Design, Wordpress, Chrome OS, Firefox, Apple Safari
Error check website code, content & compatible with all browsers.
PHP, ASP, Javascript, .NET, Web Security, Engineering, Testing / QA, Computer Security, Software Architecture, Software Testing, Website Testing, MySQL, Usability Testing
Make a custom Wordpress website / theme compatible with all (common) browsers
...for someone to make a custom Wordpress website / theme compatible with Internet Explorer, Firefox (Windows...and Safari (Windows/Mac OS X).
Currently the website only seems to be displayed properly on Firefox...Vista/7/8, and Safari on Mac OS X. The Wordpress website was made with Bootstrap and uses BigVideo.js for
We're looking for a quick fix on our website. ? If you view our website on Google Chrome or Safari, it appears...appears to be providing all of the text, images and website features. ? However, if you use Internet Explorer...following:**
(1) Make sure our website is fully compatible with ALL browsers, including: ? Internet Explorer
Make changes to website. Make compatible w/ mobile and browsers. AS#3
Website needs to be compatible for mobile devices and all browsers. Existing site that needs to be "cleaned
Make 3-4 Wordpress Pages Compatible w/ Iphone/Ipad/Browsers
...wordpress website built in html5/css3.
I need a few pages to be compatible with all major browsers including
Convert PSD / slicing to html and MUST be compatible with all common browsers
...the one getting hired here.
I have PSD of my website that I've already edited and created.
Your job...slicing?) . Simple job. It must be compatible with most common browsers (ff,IE, chrome). In order to...following:
1) AT LEAST 3 examples of your previous website jobs
2) If you would be able to provide revisions
Pop-under script (should be compatible with majority of browsers & smartphones)
I've got a simple website script (Twitter Bootstrap) which got a countdown going down from 6 and...pop-under.
It must work for the majority of the browsers & smartphones.
Please tell me briefly how you'd
...I need help making one 10 page webite browser compatible. I also need to have the new paypal shopping...and a pleasure to work with. There is just one website on this project but will eventually need help with...you return it back complete with the browser compatible html code along with installing the new paypal
My drop down menu is not compatible with most other browsers
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(1) menu: http://www.bonifacios.com
Showing 21 to 40 of 1342719 entries

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ios - Why is my app 5MB larger on the App Store? - Stack Overflow
1 The zip file I uploaded is 19.5MB, but on the App Store, Apple reports it as 24.5MB -- too large for over-the-air downloading. Is Apple adding a 5MB wrapper? Decompressing and recompressing less efficiently? Using 815K "megabytes"?
ios app-store share|improve this question asked Mar 10 '11 at 19:01
8,535654107
When your application is approved by
Apple to sell on the App Store, it is
encrypted for DRM purposes and
re-compressed. When the encryption is
added, the size of the compressed file
will increase. The exact size of the
increase will vary from app to app,
however, the size increase can be
large when the binary contains a lot
of contiguous zeros. We are unable to
guarantee the size of your file after
the encryption has been added.
Or paraphrased: Encrypted data compresses poorly.
Download the app from the App Store with iTunes. You should end up with a .ipa in ~/Music/iTunes/Mobile Applications which is (hopefully) approximately what you get from the App Store. Check its size. You can additionally use something like unzip -Z myapp.zip to check the compressed size of individual files (an .ipa is just a .zip).
If, as in FreeAsInBeer's answer, your executable's compressed size is increasing loads, then it might be worthwhile trying to fix this (5 MB is a lot of code). Compiling with -Os might be helpful.
Also note that the .ipa will have some additional info, namely iTunesArtwork (from the up-to-512x512 App Store app icon) and iTunesMetadata.plist (which has stuff like the App Store category) and some FairPlay information. I'm not sure which of these are sent to the device.
And finally, Apple might be using M = 106 instead of 220 — 19.5×220 ≈ 20.4×106 . IIRC this was one of the changes in Snow Leopard.
share|improve this answer answered Mar 10 '11 at 19:17
How to correct the spelling of app name in App Store?
What could possibly break an app during update through the iOS App Store?
How to publish .app to app store?
Packing IOS App with Large Amount of Data

value: This website is a question and answer website for professional and enthusiast programmers. It is the flagship site of the Stack Exchange Network, created in 2008 by Jeff Atwood and Joel Spolsky.


text:
- Pinterest...like it. - This is fixed price project. Please bid for full project completion.
For more clarifications
The company I represent has an existing web application running on Windows Server 2012. The...accepts CSV and Excel XLS(X) files that contain search parameters and keys for input used by the scraping
...here's what I have so far from a developer using java/Python and Django but you could work with my developer
Want a crawler which will find every url of a website.
It will use a url to extract content from that
Search the Web for Something Need to search the website www.worldexpodubai.ae and submit data in a excel sheet, with heads as same...First visit the website www.worldexpodubai.ae and search the pages inside it. 4
...that can help us create a project management tool; aka Trello The project management tool and workflow...years of experience web development;
Mar 27, 2015Ends - 6d $144
...know of any significant changes.
3) Allow to search not only by artist but also by venue and by day
Mar 23, 2015Ends - 22h 31m
...loose diamond search plugin built for a wordpress site.
I have the web site and


text:
Patent US6465299 - Semiconductor memory and method for fabricating the same - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Advanced Patent Search | Sign inAdvanced Patent SearchPatentsSemiconductor memory and method for fabricating the same, the semiconductor memory including a cell transistor having a trench region formed in a semiconductor substrate and channel regions at sides of the trench region, source/drain regions formed in a bottom of the trench region and in a surface of...http://www.google.com/patents/US6465299?utm_source=gb-gplus-sharePatent US6465299 - Semiconductor memory and method for fabricating the samePublication numberUS6465299 B1Publication typeGrantApplication numberUS 09/629,099Publication dateOct 15, 2002Filing dateJul 31, 2000Priority dateAug 25, 1999Fee statusPaidAlso published asUS6903414, US20020195680Publication number09629099, 629099, US 6465299 B1, US 6465299B1, US-B1-6465299, US6465299 B1, US6465299B1InventorsWon So SonOriginal AssigneeHyundai Electronics Industries Co., Ltd.Patent Citations (2), Referenced by (3), Classifications (20), Legal Events (3) External Links: USPTO, USPTO Assignment, EspacenetSemiconductor memory and method for fabricating the sameUS 6465299 B1Abstract Semiconductor memory and method for fabricating the same, the semiconductor memory including a cell transistor having a trench region formed in a semiconductor substrate and channel regions at sides of the trench region, source/drain regions formed in a bottom of the trench region and in a surface of the substrate adjacent to the trench region and in contact with the channel region, and gate electrodes at sides of the trench insulated from the trench wall.
What is claimed is: 1. A method for fabricating a memory, comprising the steps of:
(1) selectively etching a semiconductor substrate inclusive of an active region and a device isolation region for isolating the active region, to form a trench for forming a plurality of wordlines; (2) implanting impurity ions in an entire surface inclusive of the trench for forming wordlines; (3) forming wordlines at sides of the trench for forming wordlines including the steps of: (1) forming a gate oxide film, a polysilicon layer, and a silicide layer in succession on an entire surface inclusive of a trench, and selectively removing the gate oxide film, the polysilicon layer, and the silicide layer to leave the gate oxide film, the polysilicon layer, and the silicide layer only in the trench, and (2) selectively leaving the gate oxide film, the polysilicon layer, and the silicide layer only at sides of the trench for forming wordlines by photolithography; (4) forming the insulating layer for protecting the wordlines and a planar first ILD layer, and etching selectively, to form a bitline contact hole; (5) forming a bitline contact plug layer in the bitline contact hole, and forming a bitline in a direction vertical to the wordline; and, (6) forming a second ILD layer on an entire surface, forming a storage node contact, and stuffing the storage node contact hole, to form a storage node contact plug layer. 2. A method as claimed in claim 1 wherein the trench for forming wordlines is formed to cross the active region in a short axis direction.
3. A method as claimed in claim 1 wherein the source/drain regions are formed in a bottom surface of the trench for forming wordlines and in the active region having no trench formed therein.
4. A method as claimed in claim 1, wherein the gate oxide film, the polysilicon layer, and the silicide layer are left in the trench by CMP.
5. A method as claimed in claim 1, wherein the step (2) includes the step of leaving more gate oxide film, polysilicon layer, and silicide layer than other regions at an end of the wordline to form a wordline pad.
6. A method as claimed in claim 1, wherein the insulating layer for protection of the wordline is formed of nitride.
7. A method as claimed in claim 1, wherein the bitline contact plug layer is in contact with the source/drain regions and extended to outside of the active region.
8. A method as claimed in claim 1, wherein the source/drain regions are formed by ion implantation in a bottom surface of the trench, and by forming a doped polysilicon layer on the active region except a trench forming region.
9. A method as claimed in claim 8, wherein the source/drain are formed after the wordlines are patterned.
The present invention relates to a semiconductor memory, and more particularly, to a semiconductor memory and a method for fabricating the same, which can increase a device packing density of the memory and reduce a step in a cell region and a peripheral circuit.
A related art semiconductor memory will be explained with reference to the attached drawings. FIG. 1 illustrates a plan view of a related art semiconductor memory, and FIG. 2 illustrates a system of a unit cell of the related art semiconductor memory. The related art semiconductor memory is provided with source/drain formed at the same height with a channel region, and a gate line formed at a height different from the source/drain.
Referring to FIG. 1, in the plan view, a semiconductor substrate is defined as active regions 1 and device isolation regions which isolate the active regions 1, and a wordline 3 is provided to cross the active region 1 in a short axis direction. The wordlines 3 are provided at fixed intervals, repeatedly. There are source/drain regions 4 a and 4 b in the active region 1 on both sides of each of the wordlines 3, a bitline contact layer 5 on the active region 1 between adjacent wordlines 3, and a storage node contact layer 6 on the active region 1 between adjacent wordlines 3 having no bitline contact layer 5 formed thereon. The bitline contact layer 5 is provided, not on a center of the active region 1, but at a position away from the center portion in some extent. This is because of difficulty of storage node contact when the bitline passes through the center portion in a memory of COB(Capacitor On Bitline). And, a plurality of bitlines 7 are provided in a direction vertical to the wordlines 3.
A system of a unit cell of the related art semiconductor memory having the foregoing plan view will be explained.
Referring to FIG. 2, the unit cell of the related art semiconductor memory is provided with a device isolation layer 22 formed in a device isolation region of a semiconductor substrate 21 for defining an active region, gate electrodes(wordline) 23 formed on the active region, gate sidewalls 24 formed at sides of the gate electrodes 23, source/drain regions 25 a and 25 b formed in surfaces of the semiconductor substrate 21 on both sides of each of the gate electrodes 23, an interlayer insulating layer 26 formed on an entire surface inclusive of the cell transistor, a bitline 28 formed on the interlayer insulating layer 26 in contact with the source/drain regions 25 b at one side of the cell transistor, a first storage node contact plug layer 27 a in contact with the source/drain regions 25 a at the other side of the cell transistor not in contact with the bitline 28, and a second storage node contact plug layer 27 b connected to the first contact plug layer 27 a. The layer with a reference numeral 28 shown in a dotted line represents the bitline. The bitline is shown in the dotted line because the bitline is, not on the sectional plane, but spaced from the sectional plane. The gate electrode 23 has a stack of a gate insulating film, a polysilicon layer and a cap insulating layer in succession. In the related art semiconductor memory, as the gate electrode 23 is formed on the surface of the semiconductor substrate 21, the source/drain 25 a and 25 b are formed at the same height with a channel region that is formed under the gate electrode 23.
However, the related art semiconductor memory has the following problems.
There has been a limitation in a photo processing because a length of the channel of the wordline becomes the shorter as an extent of the device packing advances. However, the related art semiconductor memory failed to suggest a method for solving this problem because the related art semiconductor memory has wordlines running in parallel to the surface of the substrate, that is not favorable for an easy fabrication and yield.
The repeated increase of a height of a cell capacitor for securing a cell capacitance causes to form a great step between the cell and the peripheral region, which makes conduction of following process difficult, and the two times of photo/etching required for storage node contact causes the fabrication process complicated.
An object of the present invention is to provide a semiconductor memory and a method for fabricating the same, which can increase a device packing density and reduce a step between a cell region and a peripheral circuit.
To achieve these and other advantages and in accordance with the purpose of the present invention, as embodied and broadly described, the semiconductor memory includes a cell transistor having a trench region formed in a semiconductor substrate and channel regions at sides of the trench region, source/drain regions formed in a bottom of the trench region and in a surface of the substrate adjacent to the trench region and in contact with the channel region, and gate electrodes at sides of the trench insulated from the trench wall.
In other aspect of the present invention, there is provided a method for fabricating a memory, including the steps of (1) selectively etching a semiconductor substrate inclusive of an active region and a device isolation region for isolating the active region, to form a trench for forming a plurality of wordlines, (2) implanting impurity ions in an entire surface inclusive of the trench for forming wordlines, (3) forming wordlines at sides of the trench for forming wordlines, (4) forming the insulating layer for protecting the wordlines and a planar first ILD (Inter layer dielectric) layer, and etching selectively, to form a bitline contact hole, (5) forming a bitline contact plug layer in the bitline contact hole, and forming a bitline in a direction vertical to the wordline, and (6) forming a second ILD layer on an entire surface, forming a storage node contact, and stuffing the storage node contact hole, to form a storage node contact plug layer.
It is to be understood that both the foregoing general description and the following detailed descrition are exemplary and explanatory are intended to provide further explanation of the invention as claimed.
FIG. 1 illustrates a plan view of a related art semiconductor memory;
FIG. 2 illustrates a system of a unit cell of the related art semiconductor memory;
FIG. 3 illustrates a plan view of a semiconductor memory in accordance with a preferred embodiment of the present invention;
FIG. 4 illustrates a system of a unit cell of the semiconductor memory of the present invention;
FIGS. 5A�5H illustrate layouts and sections across line II-II′ of semiconductor memories, showing the steps of a method for fabricating a semiconductor memory in accordance with a preferred embodiment of the present invention; and,
FIGS. 6A�6E illustrate layouts and sections across line III-III′ of semiconductor memories, showing the steps of a method for fabricating a semiconductor memory in accordance with another preferred embodiment of the present invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Reference will now be made in detail to the preferred embodiments of the present invention, examples of which are illustrated in the accompanying drawings. FIG. 3 illustrates a plan view of a semiconductor memory in accordance with a preferred embodiment of the present invention, and FIG. 4 illustrates a system of a unit cell of the semiconductor memory of the present invention. The present invention suggests formation of a wordline at a position lower than a substrate for reducing a step.
Referring to FIG. 3, in the plan view, there is a semiconductor substrate having active regions 31 and device isolation regions 32 for insulating the active regions defined thereon, and wordlines 33 provided to cross the active regions 31 in a short axis direction. The wordlines 33 are provided repeatedly spaced from each other at fixed intervals. The wordlines 33 are provided, not on surfaces of the semiconductor substrate, but at sides of trenches formed in the substrate. There are source/drain regions 34 a and 34 b centered on the wordlines 33, not in the trench forming regions, but in surfaces of the substrate and bottom of the trenches, there are bitline contact layers 35 on active regions 31 between wordlines 33, and there are storage node contact layers 36 on the active regions 31 between the wordlines 33 having no bitline contact layers 35 formed thereon. The bitline contact layers 35 are not disposed at centers of the active regions 31, but disposed at positions spaced away from the center portion in some extent. Because, in a memory of a COB(Capacitor On Bitline) structure, contact of a storage node is difficult when the bitline passes through the center portion. There are a plurality of bitlines 37 provided in a direction vertical to the wordlines 33. There are wordline pads 38 at ends of the wordlines 33 formed at sides of the trenches.
A system of a unit cell of the semiconductor memory of the present invention having the foregoing planar system will be explained.
Referring to FIG. 4, the unit cell of the semiconductor memory of the present invention includes a device isolation layer 42 formed in a device isolation region of a semiconductor substrate 41 for defining an active region, a gate electrode (wordline) 43 formed at sides of a trench in the active region defined by the device isolation layer 42, source/drain regions 44 a and 44 b formed in a bottom of the trench having no gate electrode formed thereon and in a surface of the active region having no trench formed therein, an interlayer insulating layer 45 and an ILD (Inter layer dielectric) layer 46 formed on an entire surface in succession having a bitline contact hole and a storage node contact hole formed to expose the source/drain regions 44 a and 44 b, a bitline 47 for connecting to the source/drain 44 b through the bitline contact hole, and a storage node plug layer 48 connecting to the source/drain 44 a not in contact with the bitlline 47 through the storage node contact hole. A layer with a reference numeral 47 shown in a dotted line in FIG. 4 is the bitline. The bitline is shown in the dotted line because the bitline is, not on a sectional plane, but spaced from the sectional plane. The gate electrode 43 includes a stack of a gate insulating film, a polysilicon layer, and an insulating layer in succession, wherein the gate insulating film and the polysilicon layer are provided at sides and a bottom surface of the trench. The insulating layer, a cap oxide film, is formed at a height the same with the gate electrode 43. Because the semiconductor memory of the present invention has the gate electrode 43 formed under a surface of the semiconductor substrate 41, a channel region is formed vertical to the surface of the substrate. And, the source and the drain have different horizontal heights.
A method for fabricating the aforementioned semiconductor memory in accordance with a preferred embodiment of the present invention will be explained. FIGS. 5A�5H illustrate layouts and sections across line II-II′ of semiconductor memories, showing the steps of a method for fabricating a semiconductor memory in accordance with a preferred embodiment of the present invention.
Referring to FIG. 5A, the method for fabricating a semiconductor memory in accordance with a preferred embodiment of the present invention starts with forming a device isolation layer 52 in a device isolation region �a� of a semiconductor substrate 51, to define an active region �b�. As shown in FIG. 5B, the semiconductor substrate 51 is etched selectively to form a trench 53 for forming a plurality of wordlines crossing the active region �b� in a short axis direction. Impurity ions are implanted in an entire surface inclusive of the trench 53 for forming the wordline, to form source/drain regions 54 a and 54 b. And, as shown in FIG. 5C, a gate oxide film 55 is formed on an entire surface inclusive of the trench, and a polysilicon layer 56 and a silicide layer 57 are formed in succession on the gate oxide film 55. Then, the silicide layer 57 and the polysilicon layer 56 are selectively removed from portions excluding the trench regions by CMP (Chemical Mechanical Polishing). As shown in FIG. 5D, a portion of the gate oxide film 55 in contact with sides of the trench 53 for forming a wordline, the polysilicon layer 56, and the silicide layer 57 are selectively left by photolithography, to form a gate electrode(wordline) 58.
In this instance, more gate oxide film 55, polysilicon layer 56, and silicide layer 57 are left at an end of the wordline in formation of the wordline than other regions, to form a wordline pad 59. As shown in FIG. 5E, an insulating layer 60, for example, a nitride layer is formed for protection of the gate electrode 58 in a following self align contact process. As shown in FIG. 5F, a planar first ILD layer 61 is formed on an entire surface of the insulating layer 60. As shown in FIG. 5G, the first ILD layer 61 and the insulating layer 60 are etched selectively, to form a bitline contact hole, and a polysilicon layer is deposited thereon and etched back, to form a bitline contact plug layer 62 in a form extended to outside of the active region. And, a bitline(a dotted line in FIG. 5G) 63 is formed in a direction vertical to the wordline, to pass through, not the active region, but the device isolation region for easy storage node contact later. That is, the bitline 63 is formed such that the bitline 63 passes over the extended portion of the bitline contact plug layer 62. The bitline 63 is represented in a dotted line in FIG. 5G because the bitline is not on the sectional plane. Then, as shown in FIG. 5H, a second ILD layer 64 is formed on an entire surface inclusive of the bitline 63, and the first and second ILD layers 61 and 63 and the insulating layer 60 are removed selectively, to form a storage node contact hole. A polysilicon layer is formed on an entire surface inclusive of the storage node contact hole, and etched back, to form a storage node contact plug layer 65. And, though not shown on the drawing, a storage node in contact with the storage node contact plug layer 65, a dielectric layer and a plate electrode are formed in succession, to form a capacitor.
A method for fabricating a semiconductor memory in accordance with another preferred embodiment of the present invention will be explained. FIGS. 6A-6E illustrate layouts and sections across line III-III′ of semiconductor memories, showing the steps of a method for fabricating a semiconductor memory in accordance with another preferred embodiment of the present invention. The another embodiment of the present invention suggests to fabricate a semiconductor memory having source/drain regions formed in a bottom surface of a trench by ion implantation, and a storage node contact of a doped polysilicon layer formed on the active region except the trench region.
Referring to FIG. 6A, the method for fabricating a semiconductor memory in accordance with another preferred embodiment of the present invention starts with forming a device isolation layer 72 in a device isolation region �a� of a semiconductor substrate 71, to define an active region �b�. The semiconductor substrate 71 is etched selectively, to form a trench 73 for forming a plurality of wordlines crossing the active region �b� in a short axis direction. A channel ion implantation process is conducted for sides of the trench 73 for forming the wordline, for adjusting a device threshold voltage. And, as shown in FIG. 6B, a gate oxide film 74 is formed on an entire surface inclusive of the trench, and a polysilicon layer 75 and a silicide layer 76 are formed on the gate oxide film 74 in succession. Then, the silicide layer 76 and the polysilicon layer 75 are removed selectively from portions except a trench region by CMP. As shown in FIG. 6C, the gate oxide film 74, the polysilicon layer 75 and the silicide layer 76 in contact with a side of the trench 73 for forming the wordline are selectively left by photolithography to form a gate electrode(wordline) 77. In this instance, in the formation of the wordline, more gate oxide film 74, polysilicon layer 75 and silicide layer 76 are left at an end of the wordline, to form a wordline pad 78. As shown in FIG. 6D, a doped polysilicon layer 79 is deposited on a surface of the active region having no trench formed therein. The polysilicon layer 79 acts as a storage node contact layer and source/drain. As shown in FIG. 6E, an insulating layer 80, for example, a nitride layer, is formed for protection of the gate electrode 77 in a following self align contact process. Following fabrication steps are conducted the same with the steps explained in connection with FIGS. 5F�5H.
The semiconductor memory and method for fabricating the same of the present invention has the following advantages owing to the formation of the wordline in the trench region formed in the substrate.
First, since a channel width is fixed, not by separate photolithography, but by a trench depth, the wordline can be formed in a size below a resolution limitation of a photo process. That is, even in a case when the wordline has a width below 0.2 μm, devices with higher device packing densities can be fabricated without help from any additional equipments.
Second, the formation of the wordline to a height identical to a height of a substrate surface reduces a step between a cell region and a peripheral circuit region, that is favorable for planarization.
Third, the strip form of active region facilitates to improve a device packing density.
Fourth, the formation of the storage node contact, not by two times of photo and etch processes, but by one time of photo and etch processes, can simplify the fabrication process.
It will be apparent to those skilled in the art that various modifications and variations can be made in the semiconductor memory and the method for fabricating the same of the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention cover the modifications and variations of this invention provided they come within the scope of the appended claims and their equivalents.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5877522Jul 30, 1997Mar 2, 1999Nec CorporationDram composed of open-bit-line type capacitor-over-bit-line structure memory cellsUS6096598 *Oct 29, 1998Aug 1, 2000International Business Machines CorporationMethod for forming pillar memory cells and device formed thereby* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS7276410 *Dec 29, 2005Oct 2, 2007Hynix Semiconductor Inc.Semiconductor device with omega gate and method for fabricating a semiconductor deviceUS8022409Aug 16, 2007Sep 20, 2011Hynix Semiconductor, Inc.Semiconductor device with omega gate and method for fabricating a semiconductor deviceCN100502012CDec 30, 2005Jun 17, 2009海力士半导体有限公司Semiconductor device with omega gate and method for fabricating a semiconductor device* Cited by examinerClassifications U.S. Classification438/242, 257/332, 438/270, 257/E27.086, 257/E21.659, 257/E21.655, 257/E27.091, 257/302, 438/212International ClassificationH01L27/108, H01L21/8242, H01L27/10Cooperative ClassificationY10S257/906, H01L27/10876, H01L27/10891, H01L27/10808, H01L27/10823European ClassificationH01L27/108M4C2, H01L27/108M4D6, H01L27/108F6Legal EventsDateCodeEventDescriptionMar 30, 2010FPAYFee paymentYear of fee payment: 8Mar 22, 2006FPAYFee paymentYear of fee payment: 4Jul 31, 2000ASAssignmentOwner name: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD., KOREA, RFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:SON, WON SO;REEL/FRAME:010988/0657Effective date: 20000720Owner name: HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. SAN 136-1RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google

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text:
Top 10 Hotels in Oxford, United Kingdom | Hotels.comEnglish (United States)Book online or call 800-246-8357This call is free. 24 hours a day; 7 days a week.HotelsHotel DealsPackages & FlightsGroupsGift CardsHelpWebsite feedbackSign in & AccountSign inCreate an accountYour bookingsReview a hotelHotels.com® RewardsYour bookingsHotelsHotels in United KingdomOxford HotelsHotels in Oxford, United KingdomSearch & Compare Oxford HotelsCity, landmark, hotel name, address or zip codeCheck inCheck out I don’t know my datesRooms123456789+Room 1:Adults12345678Aged 18+Children01230-17Age at check in:Child 1:-?-<11234567891011121314151617Show dealsGet Secret Prices on select hotelsThese prices aren’t available to everyone.Unlock nowDeal of the dayEthos Hotel from $123See all Oxford dealsTrending now in OxfordMost bookedHoliday Inn OxfordExcellent 4.2 / 5( 257 genuine reviews )Top-rated for familiesHotels.com® RewardsFor every 10 nights, get 1 free! 131 people looked at this hotel in the last hourMost recent review"Very good value, clean, comfortable and welcoming. Would recommend."A Traveller, Dec 2016, GBHoliday Inn Express Oxford-Kassam StadiumGood 3.7 / 5( 307 genuine reviews )Top-rated for business travelersHotels.com® RewardsFor every 10 nights, get 1 free! 84 people looked at this hotel in the last hourMost recent review"Overall good, staff were friendly and helpful room was clean."A Traveller, Nov 2016, GBMacdonald Randolph HotelGood 3.9 / 5( 415 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 78 people looked at this hotel in the last hourMost recent review"This was an overnight stay to be close to work for the day after the Christmas party. The Randolph Hotel has a huge reputation and the service is outstanding. Since the fire the rooms have been refurbished to a wonderful standard, the 'but' is that it isn't spectacular for the cost it lives on ..."A Traveller, Dec 2016, GBThe ButteryGood 3.9 / 5( 500 genuine reviews )Top-rated for business travelersHotels.com® RewardsFor every 10 nights, get 1 free! 73 people looked at this hotel in the last hourMost recent review"Good location. Very helpful staff
Breakfast is good. Great coffee"A Traveller, Dec 2016, GBRamada OxfordGood 3.5 / 5( 290 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 70 people looked at this hotel in the last hourMost recent review"Really handy and pleasant hotel on the M40, really handy fot Thame"A Traveller, Nov 2016, GBJurys Inn OxfordGood 3.6 / 5( 464 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 67 people looked at this hotel in the last hourMost recent review"Larger than I expected. Plenty of room. The beds were very comfortable. "A Traveller, Oct 2016, GBOxford Spires HotelExcellent 4.0 / 5( 424 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 65 people looked at this hotel in the last hourMost recent review"For this sort of room and cost, it was disappointing for some bottles water not to be in the room. A small thing but...."A Traveller, Dec 2016, GBDe Vere Oxford ThamesExcellent 4.4 / 5( 188 genuine reviews )Top-rated for business travelersHotels.com® RewardsFor every 10 nights, get 1 free! 64 people looked at this hotel in the last hourMost recent review"Good location about 10 minutes drive from Oxford. Ample parking. Stayed only 1 night arriving late so didn't really use Hotel facilities at all so can't comment. There is some background noise either from an airport (?) or the busy roads nearby which was audible through the night (as our window..."A Traveller, Dec 2016, GBOld Bank HotelExcellent 4.6 / 5( 151 genuine reviews )Top-rated for familiesHotels.com® RewardsFor every 10 nights, get 1 free! 55 people looked at this hotel in the last hourMost recent review"We spent two nights in the Old Bank Hotel, and enjoyed every minute of it. They responded quickly to any queries we had in advance, and the car parking was easy, and was reserved.
Our room was ..."A Traveller, Dec 2016, GBCrazy BearGood 3.8 / 5( 37 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 39 people looked at this hotel in the last hourMost recent review"Hotel Amazing! Location, decor, staff & restaurants were absolutely fantastic !"A Traveller, Sep 2016, GBOld Parsonage HotelOutstanding 4.7 / 5( 126 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 31 people looked at this hotel in the last hourMost recent review"Beautiful hotel that close to center. Staff are very helpful and friendly. Hotel provides bikes for guests which are a godsend in Oxford, we used this to travel around easily. Clean rooms, beautifully furnished and well equipped. Will definitely return."A Traveller, Nov 2016, SGThe Tower HouseGood 3.9 / 5( 202 genuine reviews )Top-rated for breakfastHotels.com® RewardsFor every 10 nights, get 1 free! 31 people looked at this hotel in the last hourMost recent review"Day in town before conference; ate in two great restaurants and enjoyed covered market"A Traveller, Sep 2016, GBMercure Oxford Eastgate HotelGood 3.8 / 5( 187 genuine reviews )Top-rated for business travelersHotels.com® RewardsFor every 10 nights, get 1 free! 25 people looked at this hotel in the last hourMost recent review"Very central location, with good facilities. As my wife is in a wheelchair, she did not accompany me to Oxford, but if she had I doubt I would have been able to choose or use this hotel - big steps at the front, complicated and narrow internal staircases, narrow doors etc. But the room was com..."W, Nov 2016, AUThe Old Black Horse - InnGood 3.0 / 5( 103 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 11 people looked at this hotel in the last hourMost recent review"Very comfortable and clean rooms with very nice service. The ground floor pub was a bonus. Free breakfast every morning was nice. The very old building was oozing with character. "A Traveller, Oct 2016, USThe Osney Arms Guest HouseExcellent 4.0 / 5( 154 genuine reviews )Hotels.com® RewardsFor every 10 nights, get 1 free! 8 people looked at this hotel in the last hourMost recent review"We had a lovely time at Osney Arms and highly recommend this quaint little hotel. Lovely room, lots of character, a sense of old charm. Staff was very helpful, very accommodating and personable. Our room was an upgrade (king bed room at the building's corner) for more space, very clean, nice t..."A Traveller, Dec 2016, USSee more hotels in Oxford, United KingdomRecently bookedRamada Oxford3 starsfrom $46The Buttery4 starsfrom $92YHA Oxford - Hostel4 starsfrom $22Holiday Inn Oxford4 starsfrom $66The Oxford Townhouse3 starsfrom $97Pay now or later on most roomsFree cancellation on most roomsPrice GuaranteeBest hotels in OxfordHow to Find the Best Oxford Hotels with Hotels.comWhen searching for Oxford hotels, look no further than Hotels.com. We make finding hotels in Oxford straightforward with our expertise and easy online booking process. Whether visiting Oxford for a city break or on a business trip, here at Hotels.com we have an extensive selection of hotels to choose from. To get an idea and an accurate evaluation of the accommodation, read our Oxford hotel reviews by previous guests. Our website also provides multiple photos of each hotel in Oxford so you know what to expect before making an online booking with us. We also include an online map which pinpoints the location of each Oxford hotel to see how close you are to the city's many tourist attractions. Oxford is renowned around the world as a center of learning, fantastic architecture and English charm. Have a walk around the city center's cobblestoned streets while visiting Christ Church and Corpus Christi College.What's Oxford Like?The historical city of Oxford is located in Oxfordshire, Southern England. Oxford offers a medieval feel combined with a modern city with a selection of restaurants, bars, cafes and shops. The quaint city center is small enough to walk or cycle around. Do what the locals do and hire a bike. Use pedal power to explore the famous attractions like Oxford Castle, Museum of Oxford, St. Michael at the North Gate and the University of Oxford Botanic Garden. There are plenty of bike stations where you can leave a cycle and visit the city's landmarks on foot. Why not go on a guided walking tour of Oxford? An experienced tour guide can take you around the city's narrow streets, alleyways and secret corners. How about reserving an Oxford hotel with us here at Hotels.com close to Radcliffe Square, right in the heart of the city center?Tips for Getting Along with Locals in OxfordOne of the most popular local customs in Oxford is rowing. The city holds the world famous annual Oxford-Cambridge boat race every April. Do remember to make an online hotel booking in advance with Hotels.com so you can join in the fun. May Day is one of the city's most popular celebrations especially with students from the university and colleges. There are plenty of street parties, street entertainers, food and drink on offer. This exciting city is also perfect for getting to know the friendly locals. If you need any help, advice or information on what to see and do, just ask. Don't miss out, book Oxford hotels online with Hotels.com.See more hotels in Oxford, United KingdomOxford travel guidesWhere to Stay in Oxford – a neighborhood guideOxford is a fascinating blend of old world English charm and bohemian energy. The university attract...Oxford Shopping Guide – where and what to shop and buyGiven its diminutive size, Oxford really punches above its weight when it comes to shopping. Top of ...What to See and Do in Oxford – a guide to notable landmarks and attractionsOxford is historic Britain at its most beguiling. Home of the oldest university in the English-speak...Oxford travel guidesAll special hotel deals in Oxford, United KingdomLast minute hotel deals in Oxford, United KingdomMore Oxford hotelsChoose one of the following to unlock Secret Prices and pay less on select hotels.EmailSign up for our latest offersHotels.com appDownload the app and book on the goHotels.com® RewardsJoin now to collect 10 nights, get 1 free*Top DestinationsHotels in New York, New YorkHotels in Las Vegas, NevadaHotels in Chicago, IllinoisHotels in San Francisco, CaliforniaHotels in Washington, District of ColumbiaHotels in Boston, MassachusettsHotels in San Diego, CaliforniaHotels in Orlando, FloridaHotels in London, United KingdomHotels in New Orleans, LouisianaHotels in Los Angeles, CaliforniaHotels in San Antonio, TexasHotels in Paris, FranceHotels in Seattle, WashingtonHotels in Atlanta, GeorgiaHotels in Philadelphia, PennsylvaniaHotels in Austin, TexasHotels in Atlantic City, New JerseyHotels in Rome, ItalyHotels in Myrtle Beach, South CarolinaHotels in Dallas, TexasHotels in Houston, TexasHotels in Denver, ColoradoHotels in Miami, FloridaSupport & FAQsYour bookingsFAQsContact usWebsite feedbackReview a hotelFor Suppliers, Affiliates and the MediaAdd HotelAffiliate with usPrivate LabelPromote with UsTravel AgentsPress OfficeUser Terms and Privacy PolicyTerms & ConditionsPrivacy PolicyCookie PolicyAbout our adsAbout UsJobsTravel GuidesTop 50 CitiesAll countriesAll hotelsSite index© 2017 Hotels.com, L.P. 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Esther Urquidez Obituary - Merced, CA | Merced Sun Star
Esther Urquidez
"Mom, I miss you. Today I took some watermelon over to my..."
- Michie and Joe Ortiz
"Thank you to all who has said all these kind words of my..."
- Michele Urquidez Ortiz
"Mom, I miss you dearly. You truly raised me with your..."
- Michele❤Michie❤ Urquidez Ortiz
"Your mother was an amazing lady, and I feel privileged to..."
- Connie Lineberger
"Ester lived for this day I always think of this song when..."
- Brenda Climer
Esther Vivian Urquidez
June 8, 1935 - August 5, 2018
Esther Vivian Urquidez was born on June 8, 1935 in Avondale, AZ and joined Heaven on August 5, 2018 in Modesto, CA.
Esther was the 2nd eldest daughter of a Ponciano Garcia and Soledad (Barajas) Garcia. She was married in 1957 and had five children - four daughters and one son. She worked for the retail store Gottschalks both while living in Los Angeles and also in Merced before she was employed by the State of California Employment Development Department from 1973 until her retirement in 2004. In 1979, she was baptized and became a member of Apostolic Tabernacle Church of Merced, where she has been an active member ever since. Esther loved singing in the choir, ushering, and serving others in any capacity. She was a mother to many and a Christian example to all.
She is preceded in death by her brothers: Robert Garcia of Oxnard, CA, John Garcia and Paul Garcia of Merced, and Daniel Garcia of San Diego, CA, her sisters: Rachel Granados and Elizabeth (Alice) Ammerman of Merced, and Mary Padilla of Deming, NM.
She is survived by her sisters: Carmen Durham (Jim Durham), Stella Ries (Michael Ries) and her children: Rebecca Ponce, Teri Urquidez-Ortiz (Nelson Ortiz), Michele Urquidez-Ortiz (Joseph Ortiz), D'Artine Solis (Frank Solis), Andres Urquidez (Candi Urquidez); 12 Grandchildren, 14 Great-Grandchildren, nieces and nephews from all her siblings and cousins.
"Strength and honour are her clothing; and she shall rejoice in time to come; she openeth her mouth with wisdom; and in her tongue is the law of kindness" Prov 31:25-26; This is who she is!!
Funeral services will be held on August 14, 2018 at Apostolic Tabernacle, 2745 E Hwy 140, Merced, CA. a visitation will be held from 9:00 a.m. - 11: a.m. with funeral services beginning at 11:00 a.m.
Published in Merced Sun Star on Aug. 11, 2018
1490 B Street | Merced, CA 95340 | (209) 722-4191
Merced, CA (209) 722-4191

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Birthday & Other Items
Ornaments PERSONALIZED 41
Ornaments CUSTOM 8
Birthday & Other Items 1
Spring & Summer 6
Handpainted ceramic Santa Cookie Jar with a big round face and red Santa Hat and Merry Christmas on his belly
Cute Ceramic Snowman with a Blue Snow Hat
Handpainted Ceramic Softy Sleigh painted with a Holly Berry print to look stuffed
Hand Painted Ceramic Tea Light Candle Holder with a White Polar Bear next to a Snow Covered Christmas Tree
Reindeer Moose Personalized Name Ornament hand-painted and custom designed
C. M. on Jan 25, 2017
Super Cute Reindeer! Love it
Handpainted Ceramic Christmas Reindeer Baby Sitting painted with a holly berry print to look stuffed
Amy Miller on Jan 23, 2017
Perfect Football ornament for my son!- I would order from this shop again!

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text:
ECG: Junctional Escape Rhythm
Sudden infant death syndrome by Maher AlQuaimi
Odira Maria Goretti
ECG OF THE WEEK Prof Dr.S.TITO’s UNIT M5 Dr.G.Arunkumar 2.

46 year old male a known smoker and diabetic presented with recurrent episodes of giddiness

O/E General exam- normal

PR- 50/min irregularly irregular

BP-100/70 mm Hg

Systemic examination- no abnormalities

ECG was taken

Rhythm strip 5.

A standard 12 lead ECG showing

Heart rate 40/min

Sinus Arrest

Junctional rhythm

Irregularly irregular

Varying RR interval

Q waves in II III avf

QTc interval 352 ms

QRS axis 60 degree

HEART RATE AFTER ATROPINE ADMINISTRATION WAS 70/MIN

Junctional beat without retrograde conduction Junctional beat with retrograde conduction ( p wave superimposed on QRS complex) Prolonged return cycle following retrogradely conducted junctional beat 7.
DIAGNOSIS Junctional escape rhythm possible sinus node dysfunction DIFFERENTIAL DIAGNOSIS A) SICK SINUS SYNDROME B) CAD (ACUTE OR CHRONIC) C) CARDIOMYOPATHY D) INFLAMMATORY E) IATROGENIC 9.
SICK SINUS SYNDROME

SSS IS A PAN CONDUCTION DEFECT POSSIBLY INVOLVING THE ENTIRE CONDUCTING SYSTEM

INCIDENCE EQUAL IN MALE & FEMALE

MORE THAN 1/2 THE CASES OCCUR>50 YEARS OF AGE

SSS PRESENTS AS

1.SINUS BRADYCARDIA

2.BRADYCARDIA TACHYCARDIA SYNDROME

3.BRADYCARDIA WITH SA OR AV BLOCK OR ESCAPE

RYTHM, OR HEMIBLOCK OR AF OR INTRA ATRIAL BLOCK

4.SINUS PAUSE/ARREST

5.INADEQUATE SINUS TACHYCARDIA

6.UNCOMPLICATED ESCAPE RHYTHM SEC TO MARKED SA

DEPRESSION

7.PROLONGED RETURN CYCLE FOLLOWING

PREMATURE DISCHARGE OF THE SA PACE MAKER

Eg…ATRIAL, /VENTRICULAR EXTRA SYSTOLE OR

RETROGRADELY CONDUCTED JUNCTIONAL BEAT

SINUS BRADYCARDIA OR SLOW AV JUNCTIONAL RHYTHM

AT THE TIME OF SYMPTOMS IS ENOUGH FOR DIAGNOSIS

STRUCTURAL NODAL DISEASE OCCURS IN 5% OF ALL CASES OF MI AND MORE THAN 50% OF AIMI (LCA&RCA)

THE PRESENCE OF STRUCTURAL NODAL DISEASE CAN BE DIFFERENTIATED FROM EXTRINSIC CAUSES BY VAGOLYTIC AND SYMPATHOMIMETIC MANOEUVRES AND OVER DRIVE SUPPRESSION

ATROPINE (1-2mg) ADMINISTRATION SHOULD INCREASE THE SINUS RATE TO MORE THAN 90

TREATMENT USUALLY REQUIRES DEMAND

PACE MAKERS

APPROACH TO BRADYARRYTHMIAS BRADYCARDIA HR<60 MAINTAIN PATENT AIRWAY ASSIST BREATHING GIVE O2 MONITOR ECG,BP,OXIMETRY ESTABLISH IV ACCESS SIGNS & SYMPTOMS OF POOR PERFUSION NO YES OBSERVATION *PREPARE FOF TRANSCUTANEOUS PACING ,USE WITHOUT DELAY FOR HIGH DEGREE BLOCK(TYPE 2nd&3 rd DEGREE AV BLOCK) *CONSIDER ATROPINE 0.5 mg WHILE AWAITING PACING MAY REPEAT TO A TOTAL DOSE OF 3 mg, IF INEFFECTIVE TRY PACING *CONSIDER EPINEPHRINE 2-10 mcg/min OR DOPAMINE 2-10mcg/kg/min INFUSION WHILE AWAITING PACER OR IF PACING IS INEFFECTIVE 12.
THANK U REFERENCES 1)SCHAMROTH 2)HARRISON 3)HURST 4)WASHINGTON MANUAL Recommended
Sudden infant death syndrome Maher AlQuaimi

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text:
DIRTY - Review of Howard Johnson Anaheim Hotel and Water Playground, Anaheim, CA - TripAdvisor
DIRTY - Howard Johnson Anaheim Hotel and Water Playground
Hotel was nice and close to Disney. The reason we booked was for the splash park but never made it there. We were too busy at Disney. The hotel and our room was very dirty and a normal double stroller does not fit through the door into the room which led us to leaving our kids in hall sleeping while we got ready for bed. There was grime on the bathroom and main room lightswitchs There was even more grime behind door in the bathroom. There were cherrios on the floor that were there our entire stay and there was a grape between headboard and bedside table that also remained there for our entire stay. We were a little apprehensive letting our 9 month old roll around on the floor. Also the TV required 10 minutes to warmup. Our reservation was mishandled, even after I double checked it. Overall would not stay here again. As it was our first trip to Disney and we plan on returning there, I can say for certain there will be availability at the HOJO because I will be somewhere else. Mind you at Disney, all one needs is a room to sleep in and the HOJO can provide that.More
6,344 - 6,349 of 7,867 reviews
Room Tip: We had room on second floor corner of block 3. It was quiet, handy for pools and hotel lobby. We had no issues with noise from highway, or other guests.
Room Tip: Our room was on the freeway side. We were too tired to ever be concerned by the noise but if you think this might be a problem then request to be located away from this side.
1…105810591060…1312

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text:
BBB Business Profile | International Collection Agency
> International Collection Agency
(866) 885-9159
P O Box 692715
(407) 262-4501
(407) 264-4500
International Collection Agency has received 0 out of 5 stars based on 0 Customer Reviews and a BBB Rating of A+.

value: This website is a private, nonprofit organization whose self-described mission is to focus on advancing marketplace trust, consisting of 106 independently incorporated local BBB organizations in the United States and Canada, coordinated under the International Association of Better Business Bureaus  in Arlington, Virginia.The Better Business Bureau is not affiliated with any governmental agency. Businesses that affiliate with the BBB and adhere to its standards do so through industry self-regulation.


text:
TSO3 Comments on Unusual Trading Activities $countyNameToPathMap.put("sp
QUÉBEC CITY and MYRTLE BEACH, SC, Aug. 23, 2017 /PRNewswire/ - TSO3 Inc. (TSX: TOS), an innovator in sterilization technology for medical devices in healthcare settings, announced today, at the request of the Investment Industry Regulatory Organization of Canada (IIROC), that it is not aware of any undisclosed material change to the Corporation's business or operations that would cause today's unusual trading activities in the Corporation's stock and has no material change to report at this time.
Preview: TSO3 Provides an Update on Recent Activities
Preview: TSO3 Reports Record Second Quarter 2017 Results

value: This website .


text:
1429299851 - Psychology Loose Leaf Version Budget Books by David G Myers - AbeBooks
1429299851 - Psychology Loose Leaf Version Budget Books by David G Myers
Item Description: Worth Publishers. LOOSE LEAF. Book Condition: Good. 1429299851 Item in good condition. Textbooks may not include supplemental items i.e. CDs, access codes etc. Bookseller Inventory # Z1429299851Z3
Item Description: Worth Publishers. LOOSE LEAF. Book Condition: Fair. 1429299851 Student Edition. Heavy wrinkling from liquid damage. Does not affect the text. Heavy wear, fading, creasing, Curling or tears on the cover and spine May be missing front or back cover. May have used stickers or residue. May be loose-leaf version. Poor binding causing loose and torn pages. Heavy writing, highlighting and marker. Supplemental materials are not guaranteed with used books. Book may have additional damage or defects not listed above. Bookseller Inventory # 1429299851-4
Item Description: Worth Publishers, 2011. Loose Leaf. Book Condition: Used: Acceptable. Front/back cover is missing. Book has signs of cover wear. Inside pages may have highlighting, writing and/or underlining. Used books may have stickers on them. Ships same day or next business day. Free USPS Tracking Number. Excellent Customer Service. Ships from TN. Bookseller Inventory # 385237
Item Description: Worth Publishers (edition 10). Loose Leaf. Book Condition: Fair. 10. Loose leaf. Ship within 24hrs. 14 days return guarantee! APO/FPO addresses supported. Bookseller Inventory # 1429299851-7-1-10_17
Item Description: Book Condition: Very Good. In good condition and ready for quick shipment to any US location by an experienced and reliable seller. CDs and Access codes may not be included as is the case with most used books. Thanks for shopping with us!. Bookseller Inventory # 625236
Item Description: Worth Publishers, 2011. Loose Leaf. Book Condition: Very Good. Very good condiition. Loose leaf version. 100% money-back guarantee if not satisfied! Very good condition! 100% money-back guarantee if not satisfied!. Bookseller Inventory # mon0000005621
Item Description: Worth Publishers. LOOSE LEAF. Book Condition: Good. 1429299851 US Edition Textbook, May Have Highlights, Notes and/or Underlining, BOOK ONLY-NO ACCESS CODE, NO CD, Ships with Emailed Tracking from USA. Bookseller Inventory # Z1429299851Z3
Item Description: Worth Publishers, 2011. Loose Leaf. Book Condition: Very Good. Great condition with minimal wear, aging, or shelf wear. Bookseller Inventory # P021429299851
Item Description: Worth Pub, 2011. Loose Leaf. Book Condition: Good. Your support helps send textbooks to students abroad as we believe that affordable and accessible education is a right, not a privilege. Bookseller Inventory # mon0000084471
Item Description: Worth Publishers, 2011. Loose Leaf. Book Condition: Like New. Almost new condition. Bookseller Inventory # P011429299851
Item Description: Worth Publishers, 2011. Loose Leaf. Book Condition: New. Never used!. Bookseller Inventory # P111429299851
Item Description: Worth Publishers, 2011. Loose Leaf. Book Condition: New. Brand New!. Bookseller Inventory # VIB1429299851
Item Description: Worth Publishers, 2011. Loose Leaf. Book Condition: Good. 10. Ships with Tracking Number! INTERNATIONAL WORLDWIDE Shipping available. May not contain Access Codes or Supplements. May be ex-library. Shipping & Handling by region. Buy with confidence, excellent customer service!. Bookseller Inventory # 1429299851
Item Description: Worth Pub, 2011. Hardcover. Book Condition: Brand New. 10 lslf edition. 928 pages. 10.70x8.90x1.20 inches. In Stock. Bookseller Inventory # __1429299851

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text:
Proper Usage of Rails After_Filter - Stack Overflow
Proper Usage of Rails After_Filter
In a small app I am building, I have a controller that creates an exchange. When a user creates an exchange they are simultaneously the organizer of the exchange and a participant in the exchange. Participants are tracked by a join table that joins a user_id and an exchange_id. Organizers are tracked by a foreign user_id key in the exchange table. I am trying to figure out where to put the code that will automatically create a new membership record for the organizer of the exchange. Should I put this in the exchange_controller's create action itself, or in an after_filter triggered by the create action? Or maybe somewhere else? Part of the problem is that I could not find any good examples of proper after_filter use (guides.rubyonrails.org only had sparse mention of it), so any links pointing in the correct direction would be appreciated as well. Here is relevant model code:
# Returns array of exchanges user is participating in
has_many :participations,
:through => :memberships,
:source => :exchange
# Returns array of exchanges user has organized
has_many :organized_exchanges,
:foreign_key => :organizer_id,
:class_name => "Exchange"
app/models/membership.rb:
attr_accessible :exchange_id, :user_id, :role
belongs_to :exchange
app/modles/exchange.rb:
belongs_to :organizer,
has_many :participants,
And here is the relevant controller code:
app/controllers/exchanges_controller.rb:
@exchange = Exchange.new(params[:exchange])
@exchange.organizer_id = current_user.id
if @exchange.save
redirect_to exchange_path(@exchange.id)
ruby-on-rails ruby-on-rails-3 controllers share|improve this question asked Feb 27 '13 at 8:50
after_filter is a completely different thing in this context. It is called when your view is completely processed and so you want to call some action to do something.
You can use after_create callback that is triggered when a record is created in the database.
In your case, a user is creating an exchange and so after the exchange is created, the after_create callback is triggered and you can apply your functionality over there to make the current user who created the exchange to be a participant.
The way to write in a model is like this:
Note: It is not good to use after_save here because it is triggered every time you save a record or even if you update a record. There is a nice SO post that clearly tells you the difference between the after_create and after_save.
See this SO post for the difference between the two.
More on the callbacks is here.
Not the answer you're looking for?	Browse other questions tagged ruby-on-rails ruby-on-rails-3 controllers or ask your own question.	asked
Does @resource_name = ResourceName.find(params[:id]) required? in Rails controller


text:
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to have buzz-in doors, that infrastructure is part of creating safe secure learning environments. and then being able to really look at the personnel that you have in your school that helps support students. from training for teachers in the classroom to the other adults who are in the classroom because there are so many adults there besides the classrooms the classroom teachers the school bus drivers, the janitors, you know, the shooting at the high school in california, it was a teacher and a campus supervisor who really talked down that student and prevented lots of further violence. that kind of training is critically important. i mean, look at in this time of crisis when states have slashed budgets and taken so many resources out of schools, some of those resources are school counsellors, school psychologists, social workers, and now, where you might have had a school counselor per school, maybe dealing with two or 300, some of the ratios now for school psychologists, for example, is one to 1,000. you can't possibly provide the kind of support Capitol Hill Hearings
. one of the leaders of this market, banks. financials. can that last in this environment? >> i mean look banks have a long way that they fell and they've had a long pathway back to something circa 2006-2007. they sri lankan as a percentage of market gap in the s&p. they are no longer dominant. that's all for the best. we have a much more diversified market. we should. i wouldn't say that the banks need to lead this matter. they've done very well. >> who is going to lead the market? >> i think you'll have a market without leadership but that doesn't mean a market that doesn't go up. you have multiple sectors of strength. technology. be inning to see how amazon does. you have a global economy growing modestly. >> are you worry about apple? >> as a company? no. am i concerned about apple as a stock at 500, i will be glad if we talked less about apple. it's one company amongst many. anybody in silicon valley has to be worried about the fact that their franchise is of extremely short duration. >> boeing. this boeing story is creeping up, getting worse on a daily basis. would you get rid Politics Public Policy Today
for silence and the environment host as forum on the disasters and environment. after remarks by fema director craig fugate, the lessons will focus on hurricane katrina, the ongoing drought and earthquake in japan on c-span 3 at 8:30 eastern. on c-span 2 at 9:00 a.m. eastern, a brookings institution conference on innovation and the economy. panelists in the day long event are scheduled to include the presidents and c.e.o.'s of alcoa, procter & gamble and nike. >> he had been talking about this dream he'd had. he talked about it for years, the american dream, and that it had become his dream and he had been in detroit just a few months before and he had talked about, you know, i have a dream that america will some day realize these principles and the declaration of independence. so i think he was just inspired by that moment. >> sunday on "after words" clayborn carson recalls his journey as a civil rights activist participating in the march on washington. it's part of three days of book tv this weekend, monday, featuring authors and books on the inauguration, president obama and martin luther k Starting Point
interest level in this environment. you have to wonder if the bank isn't holding on to your loan to maintain that high level of interest. i wonder if the might be worth your while to try to go to another bank and not refinance with the same company. it has become a much more difficult circumstances to get a mortgage because the banks are still recovering from all the bad loans that day made during the real estate mania. host: this idea of the debt to income ratio. that was something richard cordray talked-about. this is from american hero joe. explain this issue for us. guest: this goes to the heart of the ability to repay the loan. we do not want people taking on loans that they cannot afford to repay. 43% is the outside level. if your mortgage debt sure other debt -- car loans, credit cards -- exceed 43% of your growth or pre-tax income, then that is too much. that is a loan that is becoming too onerous and you might have trouble repaying. anything below 43% is acceptable as a qualified mortgage. anything above that starts to get into the territory of you are not having enough Morning Joe
proportionally because it was a real working-class environment which i grew up. so you didn't have mounds of food on your plate. and there were no snacks in our house. we didn't have potato chips or cookies. my mother would bake cookies once a week and then you'd have them as a treat. it was a whole different eating plan even though we were knocking back cokes all day long. >> with all due respect, i've heard this from joe, that's great that you ran all day. wonderful. that about the kids over the past 10, 20, 30 years who drank five cokes a day and didn't do that. >> is that coke's fault? that's the question. >> actually, it's part of a bigger problem just like the gun debate, okay? >> look, i have friends at coca-cola and friends at most of the soft drink companies. i think you've got to give them credit for at least putting this out there and saying obesity is an issue in america, and calories do count, and we're now talking about it as a result of them doing that. and it probably will generate some kind of a dialogue. >> i'll give them credit skeptically because i think they're covering thems Public Affairs
. frankly we need legislation that makes it a crime. unsafe environment, those kind of things, but is that really getting at the particular issue? i don't think it does. and sometimes they have to be able to be creative to do that. in a regard to domestic violence. absolutely. here's what we could do with that. first of all, and forgive me for saying the obvious, but nix is a wonderful thing. i'm sorry, ncic. they're both wonderful things. but ncic is a wonderful thing but anything with a serial number goes in there, too like a toaster, if you have one. it's not necessarily a go-to database. i think you're right on and i think that those people should go into the nix system right away and i think that what we need is then funding for crisis teams. because a lot of times, and even when guns and often is the case are not involved but someone needs some help and an officer rolls up at 3:00 in the morning and they are very limited in the resources that are available to them. if there is funding for properly trained crisis intervention people, there we go. now we got something. no Capitol Hill Hearings
after the fact, social services, an unsafe environment, but that does not get at the issue. they have to be creative sometimes to do that. in regards to domestic violence, absolutely. here is what we can do. forgive me for saying the obvious, ncic is a wonderful thing. anything with a serial number goes in there, like a toaster. it is not necessarily a go to database to get what we want to get at. i think you are right on. those people should go into the next system right away. what we need is funding for crisis teams. a lot of times, someone needs help and an officer rolls up at 3:00 in the morning and they are very limited in the resources available to them. if there is funding for properly trained crisis intervention people, there we go. now we have got something. now it is the mental health e r and the offices do not have to try to be creative or drive away because there is nothing they can do. was there another question? >> i wanted to add one thing. i am not an expert in mental health. i just want to say in any comprehensive package, including appropriate funding for increased a Politics Public Policy Today
in the environment in which they are in. going to be really good show tonight. >> interesting. >> 8:00 p.m. on the fox news channel. governor, thank you. coming up on the show. a big automaker recalling hundreds of thousands of cars this morning because air bags may not work. the details you need to know about next. >> tucker: manti te'o culture to blame for destroying personal relationships and should online dating be avoided all together? is it actual dating if you don't meet the person you are dating? how weird is that? a fair and balanced debate coming up. look what mommy is having. mommy's having a french fry. yes she is, yes she is. [ bop ] [ male announcer ] could've had a v8. 100% vegetable juice, with three of your daily vegetable servings in every little bottle. we don't let frequent heartburn come between us and what we love. so if you're one of them people who gets heartburn and then treats day afr day... block the acid with prilosec otc and don't get heartburn in the first place! [ male announcer ] e pill eachmorning. 24 hours. zero heartbur >> alisyn: we told you notre dame Search Results 0 to 15 of about 16 (some duplicates have been removed)

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Pop rock, chiptune, pop punk, electronic rock, synthpop
Photo Finish / Atlantic (2010–2012)
Laura Louise Green
Dave Midell
I Fight Dragons is a rock band from Chicago.[1][2] Their music is a combination of pop/rock with chiptune, featuring electronic sounds made using Nintendo Game Boys and Nintendo Entertainment Systems. To date they have released two full-length albums: 2011's KABOOM! which came out on Photo Finish / Atlantic Records, and 2014's The Near Future, which they self-released after raising over $100,000 on Kickstarter through their "Project Atma" project.[3] They have also released two EPs, 2009's Cool Is Just a Number and 2010's Welcome to the Breakdown.[4] Their music has been featured on Nintendo Video as well as on the WWE, and they wrote and performed the theme song for ABC's The Goldbergs. They have toured the USA with mc chris and Whole Wheat Bread in 2009, 3OH!3, Cobra Starship, and Travie McCoy in 2010, The Protomen in 2011, and they were on the entire 2012 and 2014 Vans Warped Tours. They went on their first national headlining tour, "The War of Cyborg Liberation Tour", with openers MC Lars and Skyfox in 2012. From 2010 until 2012 they were signed to Photo Finish / Atlantic Records, but in fall 2012 they won their release from the label.[5] Mazzaferri attended Glenbrook South High School with Fall Out Boy lead vocalist and guitarist Patrick Stump.[6]
1.1 Cool Is Just a Number (2009–2010)
1.2 Welcome to the Breakdown (2010)
1.3 KABOOM! (2011–2012)
1.4 Kickstarter album and The Near Future (2013–2014)
1.5 Patreon Page and Album Adventures (2017-present)
Cool Is Just a Number (2009–2010)[edit]
I Fight Dragons was formed in 2008, with five members all hailing from Chicago. Their first EP Cool Is Just a Number was self-released in 2009. In June, 2009, Mike Mentzer left the band to pursue his own solo career and was replaced by Packy Lundholm, who had played drums on the band's first EP, and has since played lead guitar in the band. On July 25, 2009, I Fight Dragons headlined the Metro in Chicago for the first time.[7] This show was captured as a Live DVD, and a limited run of 500 numbered and signed copies of the DVD, entitled "Dragon Fight!", were released in January 2010.[8] In August 2009, Dave Midell left the band to pursue humanitarian causes. Chad Van Dahm was brought in as the new drummer.
The band signed with manager J.J. Italiano[9] and with booking agent Gabriel Apodaca of The Agency Group.[10] in September 2009, signing their first major label contract. I Fight Dragons went on their first National Tour with punk group Whole Wheat Bread and nerdcore-hiphop artist MC Chris in October of that same year. They played 45 US shows from 1 October to 24 November.[11]
Welcome to the Breakdown (2010)[edit]
I Fight Dragons signed with Photo Finish / Atlantic Records in early 2010, and went on to appear on the MTV "Too Fast For Love" tour, opening for 3OH!3, Cobra Starship, and Travie McCoy from April–June 2010.[12] In his June, 2010, concert review, Rick Florino described the band as "one of the most unique, uplifting and unforgettable new acts on the scene."[13] World Wrestling Entertainment announced that their song "Money" from their 2009 E.P. Cool Is Just a Number would be used as the theme song for the inaugural Money In The Bank Pay Per View,[14] which helped to boost the band's popularity.
On November 27, 2010, I Fight Dragons released their second EP, Welcome to the Breakdown. They indicated that this EP consisted of songs written for their Photo Finish / Atlantic Records debut album, but which ended up not having a place on the album and so were released as an EP instead.
KABOOM! (2011–2012)[edit]
KABOOM! was released October 24, 2011. Its third single Save World Get Girl was released May 3, 2012 and was featured on Nintendo Video in late 2012.
Kickstarter album and The Near Future (2013–2014)[edit]
On January 17, 2013 cRaZie$ was released as the third and final single from KABOOM!. The band was in the studio recording new music for an EP to be released in 2013. The band also released an Internet-only album composed of demos from 2010 and 2011 that were in various stages of development, but for various reasons never made it on KABOOM! titled DEMOlition: Songs That Didn't Make It On KABOOM!. On June 21, 2013 Move was released as a single from DEMOlition and the music video features the four heroines of Phantom Breaker: Battle Grounds. In April 2013, the band launched "Project Atma", a Kickstarter project to fund their new album,[3] The Near Future. On June 13, 2014, the band announced that the release date for The Near Future would be September 16, 2014 and released the track "No Strings". On August 28, 2014, the band announced that, due to manufacturing issues of the albums, the release date would be pushed further back.[15] The Near Future was released publicly on December 9, 2014, and hit #5 on the Billboard Vinyl Album Charts the week of its release.[16] On December 20, I Fight Dragons played an album release show for The Near Future to a capacity crowd at Chicago's Lincoln Hall.[17]
Patreon Page and Album Adventures (2017-present)[edit]
On the 7th August 2017, the band launched their Patreon[18] page that would be used for raising funds for new albums, which they called Album Adventures. This also saw the return of band member Bill Prokopow. The band has yet to release an album funded by the Patreon page.
Welcome to the Breakdown (2010)
DEMOlition: Songs That Didn't Make It On KABOOM! (2013)
The Future Imperfect (Bonus Tracks and Demos that didn't make The Near Future) (2014)
I Fight Dragons wrote the theme song, "Rewind", for the television show The Goldbergs.[19]
Their song "No Kontrol" was featured in commercials for season 14 of Big Brother.[20]
Their song "Money" was the official theme song for WWE's July 2010 Pay-Per-View Money in the Bank.
Their song "Heads Up, Hearts Down" was featured in the series finale of The Hills.[21]
Their song "Disaster Hearts" was featured in a long-form commercial for NCIS.[22]
Their song "Hero" was featured in the credits sequence for Magic: The Gathering – Duels of the Planeswalkers 2014.[23]
^ "Chicago Tech Report". chicagotechreport.com.
^ "DOWNLOAD: I Fight Dragons". Chicagoist. Archived from the original on 2009-04-27.
^ a b "Project Atma - I Fight Dragons Creates An Epic New Album". Kickstarter.
^ "Photo Finish Records | Page not found". Archived from the original on September 30, 2011. Retrieved September 11, 2016.
^ "I Fight Dragons - Fellow Assailants of Angry Aeromorphs,... - Facebook". facebook.com.
^ Rebecca Frank (April 17, 2012). "Warped Series: I Fight Dragons". blog.ourstage.com. Retrieved September 11, 2016.
^ "I Fight Dragons". last.fm.
^ "Archived copy". Archived from the original on 2010-02-08. Retrieved 2010-02-03.
^ "Steel Giant Management » Roster". Steelgiant.net. Retrieved 2010-12-04.
^ "The Agency Group | Agent Overview". Theagencygroup.com. Retrieved 2010-12-04.
^ Noelle Lynn Blood. "Geek Chic at the Waiting Room". Archived from the original on 2009-10-30. Retrieved 2009-10-31.
^ Cobra Starship and 3OH!3 team up for explosive "Too Fast For Love" Tour "Archived copy". Archived from the original on 2010-01-06. Retrieved 2010-02-05.
^ "Live Review: Too Fast for Love Tour — 3OH!3, Cobra Starship, Travie & I Fight Dragons — Club Nokia, Los Angeles". ARTISTdirect.
^ "Project Atma / The Near Future Manufacturing and Release Date Update". Youtube. Retrieved 29 August 2014.
^ "The Near Future is the #5 Vinyl Album in the USA this week!!!". I Fight Dragons Blog of Destiny. Archived from the original on 2015-02-07.
^ "We Sold Out Last Night's Show So We're Playing Another Free Show Tonight!!!". I Fight Dragons Blog of Destiny. Archived from the original on 2015-02-07.
^ "I Fight Dragons is creating Album Adventures". I Fight Dragons Patreon Page.
^ Michael Schneider (1 November 2013). "How The Goldbergs and Other New Shows Kept Their Theme Songs". TVGuide.com.
^ "The Hills Music - Season 6: "All Good Things..." - TuneFind". TuneFind.
^ MWK. "NCIS". TV Fanatic.
I Fight Dragons official Uvumi profile
Official fan site & street team
MusicBrainz: ee8d9ccc-ca65-434f-88a1-ba794c285fcc
Retrieved from "https://en.wikipedia.org/w/index.php?title=I_Fight_Dragons&oldid=828043353"
Chiptune musical groups
This page was last edited on 28 February 2018, at 06:23.

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