text:
Patent US7327743 - Structure cabling system - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsThis invention discloses a local area network including a hub, a plurality of nodes, communication cabling connecting the plurality of nodes to the hub for providing data communication, and a power supply distributor operative to provide at least some operating power to at least some of the plurality...http://www.google.com/patents/US7327743?utm_source=gb-gplus-sharePatent US7327743 - Structure cabling systemAdvanced Patent SearchPublication numberUS7327743 B2Publication typeGrantApplication numberUS 10/218,739Publication dateFeb 5, 2008Filing dateAug 13, 2002Priority dateJan 12, 1999Fee statusPaidAlso published asCA2363831A1, CA2363831C, CN1157022C, CN1333963A, CN1545246A, CN100376093C, DE69933700D1, DE69933700T2, EP1145494A2, EP1145494B1, US6473608, US6985713, US7006815, US7257724, US7421290, US7437217, US7813752, US8559996, US20020191553, US20030036819, US20040266492, US20050003795, US20050041800, US20050049758, US20060091865, US20070135155, US20140018970, WO2000041496A2, WO2000041496A3Publication number10218739, 218739, US 7327743 B2, US 7327743B2, US-B2-7327743, US7327743 B2, US7327743B2InventorsAmir Lehr, Ilan Atias, Dror Korcharz, David PincuOriginal AssigneeMicrosemi Corp�Analog Mixed Signal Group, Ltd.Export CitationBiBTeX, EndNote, RefManPatent Citations (39), Non-Patent Citations (9), Referenced by (5), Classifications (27), Legal Events (5) External Links: USPTO, USPTO Assignment, EspacenetStructure cabling systemUS 7327743 B2Abstract This invention discloses a local area network including a hub, a plurality of nodes, communication cabling connecting the plurality of nodes to the hub for providing data communication, and a power supply distributor operative to provide at least some operating power to at least some of the plurality of nodes via the communication cabling.
The node, whatever its nature, for example any of nodes 2012-2020 in FIG. 10A, 2062-2070 in FIG. 10B, 2112-2120 in FIG. 11A or 2162-2170 in FIG. 11B, typically includes circuitry which is required for both full functionality and reduced functionality operation, here termed �essential circuitry� and designated by reference numeral 2400, and circuitry which is not required for reduced functionality operation, here termed �nonessential circuitry� and designated by reference numeral 2402. For example, if the node comprises an IP telephone, the essential circuitry 2400 includes that circuitry enabling a user to speak and hear over the telephone, while the non-essential circuitry 2402 provides ancillary functions, such as automatic redial, telephone directory and speakerphone functionality.
NO LOAD WHEN Vout>V2 AND THE ABSOLUTE VALUE OF IO<I2 FOR ALL T1, T2, T3 SHORT CIRCUIT WHEN Vout<V3 AND THE ABSOLUTE VALUE OF IO>I3 FOR ALL T1, T2, T3 NIC LOAD WHEN VoutT3<V4 AND THE ABSOLUTE VALUE OF IOT1<IOT2<IOT3 POL LOAD WHEN VoutT1>V5 AND VoutT2>V5 AND VoutT3>V5 AND THE ABSOLUTE VALUE OF IOT1>I5 OR THE ABSOLUTE VALUE OF IOT2>I5 OR THE ABSOLUTE VALUE OF IOT3>I5. WHERE A NO LOAD condition is one in which a node is not connected to the line.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS4467314Mar 29, 1982Aug 21, 1984Westinghouse Electric Corp.Electric utility communication system with field installation terminal and load management terminal with remotely assignable unique addressUS4528667Apr 18, 1983Jul 9, 1985Siemens AktiengesellschaftSystem for the transmission of information messagesUS4692761Jun 21, 1985Sep 8, 1987Robinton Products, Inc.Adaptive communication network and methodUS4733389Jul 28, 1986Mar 22, 1988Xerox CorporationDrop cable for a local area networkUS4799211Jul 23, 1987Jan 17, 1989Digital Equipment CorporationApparatus and method for storing performance parameters of local area network system membersUS4815106Apr 16, 1986Mar 21, 1989Adaptive Networks, Inc.Power line communication apparatusUS4885563May 3, 1988Dec 5, 1989Thermo King CorporationPower line carrier communication systemUS4903006Feb 16, 1989Feb 20, 1990Thermo King CorporationPower line communication systemUS4992774Jan 27, 1989Feb 12, 1991Mccullough Robert KMethod for powering remote visual displays and allowing for data exchange over the same wire pairUS5032833Apr 27, 1989Jul 16, 1991Schlumberger Industries, Inc.Adaptive network routing for power line communicationsUS5066939Oct 4, 1989Nov 19, 1991Mansfield Jr Amos RMethod and means of operating a power line carrier communication systemUS5093838May 21, 1991Mar 3, 1992Sony CorporationLaser apparatusUS5192231Mar 26, 1991Mar 9, 1993Echelon CorporationPower line communications couplerUS5351272May 18, 1992Sep 27, 1994Abraham Karoly CCommunications apparatus and method for transmitting and receiving multiple modulated signals over electrical linesUS5452344Nov 16, 1993Sep 19, 1995Datran Systems CorporationCommunication over power linesUS5491463Jun 28, 1993Feb 13, 1996Advanced Control Technologies, Inc.Power line communication systemUS5612580 *Oct 10, 1995Mar 18, 1997Northrop Grumman CorporationUninterruptible power systemUS5684826Feb 8, 1996Nov 4, 1997Acex Technologies, Inc.RS-485 multipoint power line modemUS5689230Nov 9, 1995Nov 18, 1997Motoral, Inc.Energy monitoring and control system using reverse transmission on AC lineUS5799196Jul 2, 1996Aug 25, 1998Gateway 2000, Inc.Method and apparatus of providing power management using a self-powered universal serial bus (USB) deviceUS5828293Jun 10, 1997Oct 27, 1998Northern Telecom LimitedData transmission over a power line communications systemUS5835005Jul 12, 1995Nov 10, 1998Omron CorporationPower-line data transmission method and system utilizing relay stationsUS5859596Aug 30, 1996Jan 12, 1999Csi Technology, Inc.Switchyard equipment monitoring system and communications network thereforUS5991885Jun 11, 1997Nov 23, 1999Clarinet Systems, Inc.Method and apparatus for detecting the presence of a remote device and providing power theretoUS5994998May 29, 1997Nov 30, 19993Com CorporationPower transfer apparatus for concurrently transmitting data and power over data wiresUS6033101Dec 7, 1994Mar 7, 2000Antec CorporationCable television radio frequency and AC Power multitapUS6067626 *Oct 8, 1997May 23, 2000Nec CorporationMethod of processing externally supplied data by CPU in non-operating state and portable terminal device for the sameUS6125448May 2, 1997Sep 26, 20003Com CorporationPower subsystem for a communication network containing a power busUS6218930Mar 7, 2000Apr 17, 2001Merlot CommunicationsApparatus and method for remotely powering access equipment over a 10/100 switched ethernet networkUS6243818Sep 6, 2000Jun 5, 20013Com CorporationPower subsystem for a communication network containing a power busUS6301527Sep 24, 1999Oct 9, 2001General Electric CompanyUtilities communications architecture compliant power management control systemUS6348874Oct 14, 1998Feb 19, 2002Agilent Technologies, Inc.Power distribution to nodes in a distributed systemUS6377874Sep 7, 1994Apr 23, 2002Spd Technologies Inc.Power distribution system including integrated power node control centerUS6393607Jan 27, 1999May 21, 2002Scientific-Atlanta, Inc.AC port device for cable television tapUS6480510Jul 28, 1998Nov 12, 2002Serconet Ltd.Local area network of serial intelligent cellsUS6841979 *May 17, 2002Jan 11, 2005Powerdsine, Ltd.Power distribution with digital current controlUS20030058085Oct 28, 2002Mar 27, 20033Com CorporationPower transfer apparatus for concurrently transmitting data and power over data wiresWO1992017968A1Mar 26, 1992Oct 15, 1992Echelon CorpData communication network providing power and message informationWO1996023377A1Jan 26, 1996Aug 1, 1996Intecom IncMultimedia system having central power source and distribution subsystem* Cited by examinerNon-Patent CitationsReference1Bearfield, J.M., "Control the Power Interface of USB's Voltage Bus", Electronic Design, U.S., Penton Publishing, Cleveland, Ohio, vol. 45, No. 15, Jul. 1997, p. 80, 82, 84, 86.2ITU-T I.430 Integrated Services Digital Network-Basic User-Network Interface-Layer 1 Specification.3Lynn K "Universal Serial Bus (USB) Power Management"; WEBCON/97 Conference Proceedings, Santa Clara, CA, USA, Nov. 4-6, 1997; New York, N.Y.; IEEE Nov. 4, 1997 pp. 434-441 XP010254418.4PowerDsine Product Catalogue 1999, pp. 56-79 and 95-105, Israel.5RAD Data Comm. Ltd, "Token Ring Design Guide", 1994, #TR-20-01/94, Chapters I through 4-21.6Universal Serial Bus Specification-Rev 1.0, Jan. 15, 1996; Sec 4.2.1 pp. 29-30.7Universal Serial Bus Specification-Rev 1.0, Jan. 15, 1996; Sec 7.2.1-7.2.1.5 pp. 131-135.8Universal Serial Bus Specification-Rev 1.0, Jan. 15, 1996; Sec 9.2.1-9.2.5.1 pp. 170-171.9Universal Serial Bus Specification-Rev 1.0, Jan. 15, 1996; Sec 9.6.2 pp. 184-185.Referenced byCiting PatentFiling datePublication dateApplicantTitleUS7567579 *Oct 26, 2006Jul 28, 2009Microsemi Corp.-Analog Mixed Signal Group Ltd.Multiple current limits for power over ethernet controllerUS7571332 *Jun 13, 2005Aug 4, 2009Lenovo (Singapore) Pte. Ltd.Reducing power consumed by a computer system during a hibernation or an off state by remotely waking up the computer systemUS8234876 *Dec 16, 2008Aug 7, 2012Ice Energy, Inc.Utility managed virtual power plant utilizing aggregated thermal energy storageUS8370656 *Jul 26, 2010Feb 5, 2013Aseem GuptaPower and data hubUS20120023343 *Jul 26, 2010Jan 26, 2012Aseem GuptaPower and data hub* Cited by examinerClassifications U.S. Classification370/401, 370/463, 370/461International ClassificationH04L12/66, H04L29/00, H04L12/10, H02G3/38, G06F1/26, H04L12/44, H04L29/06, H04L29/08, H02G3/00, H04L12/56Cooperative ClassificationH04L69/323, H04M19/08, H04L12/10, H04L12/44, H02G3/00, H04L29/06, G06F1/26, G05F1/66European ClassificationH04M19/08, G05F1/66, H04L12/10, G06F1/26, H04L12/44, H04L29/06Legal EventsDateCodeEventDescriptionDec 21, 2011ASAssignmentFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MICROSEMI CORP. - ANALOG MIXED SIGNAL GROUP, LTD.;REEL/FRAME:027430/0175Effective date: 20111018Owner name: CISCO TECHNOLOGY INC., CALIFORNIAAug 22, 2011SULPSurcharge for late paymentAug 22, 2011FPAYFee paymentYear of fee payment: 4Oct 7, 2007ASAssignmentOwner name: MICROSEMI CORP. - ANALOG MIXED SIGNAL GROUP LTD, IFree format text: CHANGE OF NAME;ASSIGNOR:POWERDSINE, LTD.;REEL/FRAME:019920/0640Effective date: 20070805Owner name: MICROSEMI CORP. - ANALOG MIXED SIGNAL GROUP LTD,ISFree format text: CHANGE OF NAME;ASSIGNOR:POWERDSINE, LTD.;US-ASSIGNMENT DATABASE UPDATED:20100316;REEL/FRAME:19920/640Sep 6, 2007ASAssignmentOwner name: MICROSEMI CORP. - ANALOG MIXED SIGNAL GROUP LTD, IFree format text: CHANGE OF NAME;ASSIGNOR:POWERDSINE, LTD.;REEL/FRAME:019788/0606Effective date: 20070805RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google


text:
Words that start with avemet | Words starting with avemet
https://www.thefreedictionary.com/words-that-start-with-avemet
Dictionary, Encyclopedia and Thesaurus - The Free Dictionary 10,623,454,403 visitors served
Found 1 words that start with avemet. Browse our Scrabble Word Finder, Words With Friends cheat dictionary, and WordHub word solver to find words starting with avemet. Or use our Unscramble word solver to find your best possible play! Related: Words containing avemet
15-letter words that start with avemetSee also
15-letter words that start with avemet
Words that start with aveme

type: global

value: This website is an American online dictionary and encyclopedia that aggregates information from various sources.


text:
Socialmedia107howtosuccessfullygrow...
by Anessa Gross
by jeffbison
Internet Marketing Handout 8 2009
by International Vir...
Social Media & Your Business - ...
by GeorgianneBrown
Market On Shoestring Budget 825
by Ken Mair
10 Errores en tu web que te hacen ...
P2 ICI report Interior Designer
by suehwa533
Cad, Drafting, and Sketching Interi...
by chelseagirlblues
Planning and Branding for Architect...
by MarginMediaSlides...
Desert Rose Design, Inc
Desert Rose Design, IncSocial Media PresentationJune 3, 2009
Social Networking Making a good first impression 3.
What is Social Media? Social media is content created by people using highly accessible and scalable publishing technologies. At its most basic sense, social media is a shift in how people discover, read and share news, information and content. Social media has become extremely popular because it allows people to connect in the online world to form relationships for personal and business. Businesses also refer to social media as user-generated content (UGC) or consumer-generated media (CGM). 5.
The Facts! According to Nielson Online, social media networking sites: • Are more popular than email • Account for 10% of all time spent on the Internet Worldwide traffic to Twitter.com reached 10 million visitors in February 2009, up a whopping 700 percent from the same time last year, according to comScore. There are currently more than 200 million active Facebok users, with the fastest growing demographic being those 35 years of age and older. More than 3.5 billion minutes are spent on Facebook each day (worldwide). 6.
Who is using social networking? 8.
What are the benefits of social networking? • Add a human element (you) to your service or product • Engage with customers directly • Get traffic to your website • Create buzz about your brands’ product or service • Create inbound link opportunities • Create brand loyalty and trust 9.
Rules of Social Networking… • Be nice • Don’t auto message • Moderation • Don’t sell • Be responsive • Share 10.
Business oriented social networking site used primarily for professional networking. Linkedin® has over 39 million members. Benefits include… Manage information that is publicly available about you Find and be introduced to potential clients, service providers and subject experts Be found for business opportunities and find potential partners 11.
Creating a Professional Linkedin® Profile 12.
Creating a Professional Linkedin® Profile 13.
Creating a Professional Linkedin® Profile 14.
• Grow your network - email contacts, add link in email signature, add link in newsletter and website • Join / Create Linkedin® Groups • Linkedin® Advertising - Large and Small Budgets • Recommendations – How much is too much? • How can one politely turn down a request for a recommendation? • Linkedin® is not Facebook I’m on Linkedin®, Now What? 15.
Facebook Basics Network – Reaches over 200,000,000 active users and connects people with: Friends Family Coworkers Classmates Neighbors Existing Customers Potential Customers 16.
Facebook Basics Getting Started Go to Facebook.com Complete Sign Up Complete Security Confirm Email after Registration 17.
Facebook Basics Friends Find Friends 18.
Facebook Basics Profile Complete your Profile 19.
Facebook Basics Profile Find Friends 20.
Facebook Basics Join a Network 21.
Facebook Basics Wrap Up - View and Edit Your Profile 22.
Facebook Basics View Profile 23.
Facebook Basics Other Activities for Entertainment Wall – post messages for everyone to see Messages – send private messages Photos – create albums and upload photos Applications – can be used for entertainment and marketing your business 24.
Facebook for Businesses Setup a Group or Fan page Advertisements - By creating Facebook advertisements, your company can enjoy the following: Attach social actions about your business to your ads Create demand for your product Quickly create image and text-based ads Precisely target by age, gender, location and more Choose to pay per click (CPC) or impression (CPM) Track your progress with real-time reporting Gain insight about who’s clicking on your ad Make modifications to maximize your results Choose your own budget and placement schedule Receive real-time data on the performance of your campaign 25.
Facebook for Businesses 26.
10 Business Benefits of Using Facebook Applications Branding Viral Marketing Drive Traffic to Website Manage Reputation (PR) Target Audience Lead Generation Customer Engagement Customer Retention Case Studies Gain Feedback 27.
Twitter Getting Started 28.
Twitter Basics Register 29.
Twitter Basics Find Friends 30.
Twitter Basics Find & Follow 31.
Twitter Basics What to do now? Tweet Follow 32.
Twitter Following When you’re ready to start following others, click Find People at the top of your Twitter page. Twitter provides a few ways to find others to follow: Find on Twitter Find on Other Networks Invite by Email Suggested Users Be Cautious! Following too many people too quickly (we are talking in the thousands) will raise suspicion that you’re a spammer and increases the potential that Twitter will suspend your account. 33.
Twitter The Lingo @ replies A follow-up to another user’s tweet or comment # Hashtags Help to designate topics that people might search link shorteners Sites such as http://bit.ly , http://www.tr.im and http://tinyurl.com allow web links to fit in the 140- character tweet limit DM Direct message to another user Favorites A way to bookmark a tweet for easy reference 34.
Twitter Tweet Communicate and stay connected through the exchange of quick, frequent answers to one very simple question: What are you doing? Answers (known as tweets) must be under 140 characters in length and can be sent via instant message, mobile texting or the web. 35.
Twitter Basics Tweets 36.
Twitter Basics Etiquette Twitter etiquette is still evolving. Here are guidelines from other social media sites that should be used: Respect others Participate in the community Don’t just promote your agenda Ideas to help get your creativity flowing: Realtors tweet about new homes on the market Restaurants tweet their daily specials Orchestras / Bands tweet about upcoming concerts or shows Chambers of commerce tweet about local events and promotions Non-profits tweet about fundraising events 37.
Twitter for Businesses Need ideas of what to Tweet? Instead of answering the question, ask a question. This is your best source for gaining opinions. Follow interesting people. Tweet about what others are doing, charitable acts, etc. Have more than one Twitterer at your company. This promotes a variety of discussions. When promoting a blog or link, explain what it offers instead of just listing a URL. When you do talk about yourself, make it useful by giving advice and sharing valuable information. Share the human side of your company. Don’t toot your own horn too much. 38.
Twitter for Businesses List Services Promote Events Promote Clients 39.
What’s The Takeaway What Is the Next Step? How do people find you and your business? How do people find your competitors? Join the conversation… who, what, when, how – can you help people? Create a Plan - Social Media Management Takes Time 40.
Socialmedia107howtosuccessfullygrowyourbusinesswithtwitter 111031212931 Phpapp02
Anessa Gross
jeffbison
International Virtual Assistant Association (IVAA)
Social Media & Your Business - Gold Coast Builders Association
GeorgianneBrown
10 Errores en tu web que te hacen perder clientes y como resolverlos Patricia Núñez
Cad, Drafting, and Sketching Interior Design Samples
chelseagirlblues
Building Social Media-Twitter
Social Media – Welche Maßnahmen für welches Unternehmen
CB.e WetzelBemm Digitale Kommunikation GmbH
Marketing to Architects & Designers

value: This website is an American hosting service, now owned by Scribd, for professional content including presentations, infographics, documents, and videos. Users can upload files privately or publicly in PowerPoint, Word, PDF, or OpenDocument format.


text: mcten Dave McMenaminGood day to go back and read Ralph Wiley's take for Page 2 on the controversial figure that is Jim Brown http://t.co/OtxMCIlYoa …14 minutes ago mcten Dave McMenaminGood day go go back and read Ralph Wiley's take for Page 2 on the controversial figure that is Jim Brown http://t.co/OtxMCIlYoa15 minutes ago mcten Dave McMenaminNew story: Steve Blake is out 6 weeks with an elbow injury. Reax from Kupchak, Kobe, etc http://t.co/HW71hiaTvUabout an hour ago ramonashelburne ramonashelburneRT @waitfordusk: @ramonashelburne The best available is prob this dude Ricky who works at the skate shop on Pacific Ave across the street f…about 2 hours ago ramonashelburne ramonashelburneRemember also, Lakers have luxury tax considerations that factor into any decision like thisabout 2 hours ago ramonashelburne ramonashelburneLakers may add someone, may not. Depending on what's out there.about 2 hours ago ramonashelburne ramonashelburneSense I get is that Lakers are looking for PG help with an eye on best player available, not necessarily PGs who have played system beforeabout 2 hours ago ArashMarkazi Arash MarkaziThe Jazz welcome back Marvin Williams by spoofing Kobe's return video. Amazing. http://t.co/wnqcJvknE2about 3 hours ago mcten Dave McMenaminKobe said he'll welcome other guys (Meeks, Wes, X, Young) pushing the ball up court and then KB will initiate offense from elbow afterabout 5 hours ago Lakers Los Angeles LakersVIDEO: @kobebryant talks about @SteveBlake5's injury and what adjustments he'll have to make in his absence - http://t.co/pk2NQXvv9dabout 5 hours ago Lakers Los Angeles LakersRT @LakersTV: VIDEO: @SteveBlake5 discusses his injury and how it happened - http://t.co/yUFHfknYg0about 6 hours ago mcten Dave McMenaminIn the 6 games since he tore the ligament in his shooting elbow, Steve Blake shot 18-of-52 overall (34.6 pct) and 9-of-32 from 3 (28.1 pct)about 7 hours ago mcten Dave McMenaminRT @tysonbeckdesign: With Blake, Nash, Farmar injured for the @Lakers this is the @kobebryant we'll be seeing http://t.co/eRf3HTMmkWabout 7 hours ago ramonashelburne ramonashelburneLove it! RT @SportsCenter: The Rangers selected 2B Russell Wilson from the Rockies in the Rule 5 draft. Yes. That Russell Wilson.about 7 hours ago mcten Dave McMenaminThe league's young PGs aren't just hurting LAL on the scoreboard: Nash's leg was hurt from colliding w/ Lillard; Blake's elbow was from Wallabout 7 hours ago ramonashelburne ramonashelburneReason Lakers had thought Kobe fit better as a forward, was his preference to play in high post. That'll change now with Blake's injuryabout 7 hours ago ramonashelburne ramonashelburne@mcten so much for his postup gameabout 7 hours ago ramonashelburne ramonashelburneThis doesn't sound good RT @mcten: Steve Blake: "If I was a baseball player I'd probably have surgery." He says he'll get a PRP injectionabout 7 hours ago mcten Dave McMenaminWhen specifically asked about Barbosa, Morris and Duhon, Kupchak said those are all players "on the list" of consideration for LALabout 7 hours ago mcten Dave McMenaminMitch Kupchak says that LAL could take a flyer on a practice PG but doesn't think there's anyone out there who could come in & get PTabout 8 hours ago Follow ESPN's NBA coverage on Twitter »

value: This website is the official website of ESPN. It is owned by ESPN Internet Ventures, a division of ESPN Inc.


text:
Los Delfines Hotel and Nitelife!!! HELP ASAP!!!!!!!! - San Andres Island Forum - TripAdvisor
Help Center Los Delfines Hotel and Nitelife!!! HELP ASAP!!!!!!!! - San Andres Island Forum
Browse all 699 San Andres Island topics » Los Delfines Hotel and Nitelife!!! HELP ASAP!!!!!!!!
San Andres and Providencia Department forums San Andres Island forum San Andres Island forums San Andres Island forums All forums MariaSNewYork
Los Delfines Hotel and Nitelife!!! HELP ASAP!!!!!!!! Jan 27, 2008, 12:09 AM
Hello Im flying to SAI on feb 8th! I was able to get a reservation at the Decameron los Delfines altho it was a little more expensive than the Decameron Aquarium and the Marazul i was wondering if the hotel is as good as them altho is smaller or if it looks like a cheap hotel?? :-S and also what nite club can you recomend??? Please advise ASAP! Thanks!! Report inappropriate content Hide Travelers interested in this topic also viewed... Show Prices Decameron Los Delfines
#9 of 42 hotels in San Andres Island 562 reviews
"A great boutique hotel in the middle of the island"
Re: Los Delfines Hotel and Nitelife!!! HELP ASAP!!!!!!!! Jan 27, 2008, 9:21 AM
I just got back on Jan 24/08, It looked like a motel not a hotel.
Marazul is a very nice quiet family style place and the best of all the hotels.
Aquirium is a mix of party and family it was ok NO BEACH just boardwalks, you can take a bus to all the hotels, rocky key is the best beach book lunch with your hotel and stay the day, the bus leaves rocky key at 4pm a cap will cost you arouns $5.00 us to go back
Re: Los Delfines Hotel and Nitelife!!! HELP ASAP!!!!!!!! Jan 27, 2008, 10:11 AM
I don't care for large resorts, and I loved the look of Los Delfines. Yeah, you can tell it's a renovated motel, but the pool area was very inviting. The construction alone at the Aquarium would keep me from there. And I'm a confirmed 'town' person, so Marazul wouldn't be an option.
I'm not a fan of all-inclusives, there are some great restaurants on San Andres.
Re: Los Delfines Hotel and Nitelife!!! HELP ASAP!!!!!!!! Sep 15, 2009, 4:19 PM
-:- Message from TripAdvisor staff -:-This topic has been closed to new posts due to inactivity. We hope you'll join the conversation by posting to an open topic or starting a new one.To review the TripAdvisor Forums Posting Guidelines, please follow this link: http://www.tripadvisor.com/pages/forums_posting_guidelines.htmlWe remove posts that do not follow our posting guidelines, and we reserve the right to remove any post for any reason.Removed on: 4:19 pm, September 15, 2009
562 Reviews Show Prices San Andres Island, San Andres and Providencia Department Decameron Aquarium
2,989 Reviews Show Prices San Andres Island, San Andres and Providencia Department Decameron San Luis
1,651 Reviews Show Prices San Luis, San Andres Island Casa de las Flores Tropical Lodge Hotel
1,673 Reviews Show Prices San Andres, San Andres Island GHL Relax Hotel Sunrise
1,452 Reviews Show Prices San Andres, San Andres Island More Hotel MS San Luis Village
219 Reviews Show Prices San Andres, San Andres Island Hotel Casablanca
1,127 Reviews Show Prices San Andres Island, San Andres and Providencia Department Sunset Hotel
308 Reviews Show Prices San Andres Island, San Andres and Providencia Department Less All hotels in San Andres Island

value: This website is an American online travel company that operates a website and mobile app with user-generated content and a comparison shopping website.


text:
Fade Ridge Road
Latest News for: fade ridge road
Demonstration garden opening on ridge
A� grand opening for a new Community Demonstration Garden is planned 10 a.m. June 29 of the at 6344 Clark Road, at the north driveway to the Paradise Irrigation District office in Paradise. The garden will allow ridge residents to learn more about the best plants for ridge landscaping, water-wise gardening concepts and different ways to efficiently irrigate a ridge garden and yard ... ....
Marjorie enjoyed her favorite corner table at the Ridge Terrace on many Friday nights ... Friday, June 22 at Harrisena Community Church, 1616 Ridge Road, Queensbury, with the Rev ... In lieu of flowers, the family requests memorial contributions be sent to the Harrisena Community Church Scholarship Fund, 1616 Ridge Road, Queensbury, NY 12804; or the Fort Hudson Nursing Center Activities Fund, 319 Broadway, Fort Edward, NY 12828....
... 109 (Beebe), from Haga Ridge Road to the county line (closed)Route 329, from Route 144 to Route 550Route 329, from Route 550 to Route 13Route 550, from Route 33 to Route 690....
Thursday. PERFORMANCES. Chico Theater Company. 7.30 p.m. Footloose. $22 adult, $20 senior (65 or older), $16 youth (15 or under). 166 E. Eaton Road # F. Theatre on the Ridge. 7.30 p.m. Enchanted April. $20 reserved, $16 general. 3735 Neal Road. Oroville State Theatre. 7 p.m. Doors open at 6.30 p.m ... Eaton Road # F. Theatre on the Ridge ... 3735 Neal Road ... Eaton Road # F. Theatre on the Ridge ... 3735 Neal Road ... Eaton Road # F. Theatre on the Ridge ... 3735 Neal Road....
Community report ... The meeting will be at Pine Ridge Country Club, 30601 Ridge Road in Wickliffe ... Advertisement. ....
Deer Ridge Lane, Deer View Circle, Victoria Court, Benbrandon Court, Springvillage Lane and Drive, Fairway Crossing, Bogey Drive ... Ferguson Road, east and west, Guest Court, Crestfield Street, Whitney Avenue, Fulwell Drive ... Clare Road, Hilltop Road, Harding Heights Blvd, Mercer Avenue, Chambers Road....
Tri-C to host visit nights June 25-28
The event will be at the Western Campus, 11000 Pleasant Valley Road in Parma and Corporate College West, 25425 Center Ridge Road in Westlake from 5.30 to 7.30 p.m....
Some Seeley district roads remain closed due to flooding
SEELEY LAKE — Roads on the Seeley Lake Ranger District are still experiencing impacts from flooding. Several roads continue to have closure orders in place. The following roads remain closed.. • Upper Beaver Finley road No. 9974 near Boles meadow due to standing water on the road. • Morrell Mountain road No ... • Grouse Creek road No ... 685 and Richmond Ridge road No....
Chestnut Ridge Park. 6121 Chestnut Ridge Road, Orchard Park ... “Paddington 2,” Willow Ridge Park (Willow Ridge Elementary School) Aug ... Bassett Park, 359 Klein Road, Williamsville; Island Park, 5577 Main St., Williamsville; Clearfield, 730 Hopkins Road, Williamsville; Williamsville Meeting House, 5658 Main St., Williamsville; Willow Ridge Park & Elementary School, 480 Willow Ridge Drive, Amherst....
The Indian armed forces marked the day with yoga being conducted from the world’s highest and coldest battlefield at the Siachen Glacier-Saltoro Ridge to warships and submarines on the high seas ... Indian troops had intervened in mid-July last year when PLA troops had attempted to disrupt the status quo by constructing a road towards the Jampheri Ridge, which overlooks India’s strategically-vulnerable Siliguri Corridor, in the region....
The 2018 USA Cycling Professional Road, Individual Time Trial and Criterium National Championships will be in Knoxville and Oak Ridge the weekend of June 21-24 ... The races will require closure of a number of streets in downtown Knoxville on Friday evening, June 22, and roads in downtown, East Knoxville and South Knoxville all day on Sunday, June 24 ... The cycling weekend kicks off on Thursday, June 21, in Oak Ridge....
Part of Edney Ridge Road closed due to water main break
GREENSBORO — Edney Ridge Road is closed from Stradford ......
(AP) — Work is underway to repave a portion of the Blue Ridge Parkway, and a spokeswoman says motorists can expect lane closures and traffic delays....

value: This website is a news aggregator founded in March 1995 and launched online in 1998. In 2003, Search Engine Watch praised the service for its "Special Reports", and called it "an interesting alternative" to other news aggregation services.


text:
0960083405 - The Toilet Book: Knowing Your Toilet and How to Fix It, Sometimes by Helen Mckenna - AbeBooks
0960083405 - The Toilet Book: Knowing Your Toilet and How to Fix It, Sometimes by Helen Mckenna
ISBN: 0960083405
The toilet book: Knowing your toilet and how to fix it, sometimes
Published by Harmless Flirtation with Wealth (1976)
ISBN 10: 0960083405 ISBN 13: 9780960083404
About this Item: Harmless Flirtation with Wealth, 1976. Condition: Fair. 3rd. Former Library book. Shows definite wear, and perhaps considerable marking on inside. Seller Inventory # GRP78167755

value: This website is an e-commerce global online marketplace with seven websites that offer books, fine art, and collectables from sellers in over 50 countries. Launched in 1996, it specialises in used, rare and out-of-print books.


text:
Vintage Bridal Earrings Gold Pearl Earrings Gold Crystal
Vintage Gold Wedding / Bridesmaid Earrings, These were created by threading Gold Glass Pearls and Gold Plated Chinese Crystals onto Vintage Style Head Pins and then securing with a wrapped loop.
The Pearls and Crystals have been accented with Vintage Style Flower Bead Caps and the beads have been mounted onto Vintage Style Earring Wires.
Matching Bracelet :- http://etsy.me/1bHvJ2w
Matching Necklace :- http://etsy.me/1EsHBN2
Materials: Gold Glass Pearls, Chinese Gold Plated Crystals, Vintage Flower Beads, Vintage Flower Bead Caps, Vintage Earring Wires
Mother of the Bride Gift Gold Pearl Bridal Earrings Vintage Gold Pearl Earrings Mother of the Groom Gift Wedding Jewelry Gift for Mom
Gold Bridal Earrings Gold Cubic Zirconia Earrings Gold Crystal Teardrop Earrings Gold Wedding Earrings Gold Earrings Gold Bridesmaid Jewelry
Gold Bridal Earrings Gold Crystal Drop Earrings Gold Wedding Teardrop Earrings Gold Bridal Drop Earrings Gold Bridesmaid Drop Earrings

value: This website is an American e-commerce company focused on handmade or vintage items and craft supplies.


text:
Patent US5554557 - Method for fabricating a stacked capacitor with a self aligned node contact ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsThe present invention provides a method of manufacturing a fence shaped capacitor for a DRAM which begins by providing a substrate including a field effect transistor having a transfer gate with nitride sidewall spacers. Next, a first insulation layer, a first polysilicon layer and a second insulation...http://www.google.com/patents/US5554557?utm_source=gb-gplus-sharePatent US5554557 - Method for fabricating a stacked capacitor with a self aligned node contact in a memory cellAdvanced Patent SearchPublication numberUS5554557 APublication typeGrantApplication numberUS 08/597,529Publication dateSep 10, 1996Filing dateFeb 2, 1996Priority dateFeb 2, 1996Fee statusPaidPublication number08597529, 597529, US 5554557 A, US 5554557A, US-A-5554557, US5554557 A, US5554557AInventorsChao-Ming KohOriginal AssigneeVanguard International Semiconductor Corp.Export CitationBiBTeX, EndNote, RefManPatent Citations (6), Referenced by (124), Classifications (14), Legal Events (5) External Links: USPTO, USPTO Assignment, EspacenetMethod for fabricating a stacked capacitor with a self aligned node contact in a memory cellUS 5554557 AAbstract The present invention provides a method of manufacturing a fence shaped capacitor for a DRAM which begins by providing a substrate including a field effect transistor having a transfer gate with nitride sidewall spacers. Next, a first insulation layer, a first polysilicon layer and a second insulation layer are formed over the transistor. A patterning step is used to define first openings in the second insulation layer over the source of the transistor. First polysilicon sidewall spacers (e.g., fences) are formed on the sidewalls of the first opening thus defining a second opening. Using the first spacers and the spacers on the transfer gates, the first insulation layer is etched to expose the source and thereby forming a node contact opening. A bottom storage electrode is formed covering the first spacers (e.g., fences) and the sidewall of the node contact opening. A dielectric layer and top plate electrode are formed over the bottom storage electrode. The method reduces process complexity by using only one photo operation to form the node contact opening and increases process tolerances by making the node contact self-aligning using the first sidewall spacers and the nitride sidewall spacers.
5. The method of claim 1 wherein said first conductive layer is formed of a doped polysilicon layer having an impurity concentration in a range of between about 1E20 and 1E21 atoms/cm.sup.3 and a thickness in a range of between about 500 and 1500 Å.
8. The method of claim 1 wherein said bottom storage electrode is formed by: (a) forming a doped polysilicon layer and a ragged polysilicon layer over the substrate surface, and (b) anisotropically etching said doped polysilicon layer, said rugged polysilicon layer, and said first conductive layer thereby forming an opening that exposes said first insulation layer, said doped polysilicon layer having a thickness in a range of between about 400 and 1000 Å; and said doped polysilicon layer having a doping concentration in a range of between about 1E20 and 1E21 atoms/cm.sup.3 and said rugged polysilicon layer having a thickness in a range of between about 500 and 1500 Å.
10. The method of claim 1 wherein said top plate electrode is formed of doped polysilicon having a impurity concentration in a range of between about 1E20 and 1E21 atoms/cm.sup.3 and a thickness in a range of between about 500 and 2000 Å.
14. The method of claim 12 wherein said first conductive layer is formed of a doped polysilicon layer having an impurity concentration in a range of between about 1E20 and 1E21 atoms/cm.sup.3 and a thickness in a range of between about 500 and 1500 Å.
16. The method of claim 12 wherein said bottom storage electrode is formed by: (a) forming a doped polysilicon layer and a rugged polysilicon layer over the substrate surface, and (b) anisotropically etching said doped polysilicon layer, said rugged polysilicon layer, and said first conductive layer thereby forming an opening that exposes the first insulation layer, said doped polysilicon layer having a thickness in a range of between about 400 and 1000 Å, and said rugged polysilicon layer having a doping concentration in a range of between about 1E20 and 1E21 atoms/cm.sup.3 and having a thickness in a range of between about 500 and 1500 Å.
17. The method of claim 12 wherein said top plate electrode is formed of a doped polysilicon having an impurity doping concentration in a range of between about 1E20 and 1E21 atoms/cm.sup.3 and a thickness in a range of between about 500 and 2000 Å.
20. The method of claim 18 wherein said first conductive layer is formed of a doped polysilicon layer having an impurity concentration in a range of between about 1E20 and 1E21 atoms/cm.sup.3 and a thickness in a range of between about 500 and 1500 Å.
25. The method of claim 18 wherein said bottom storage electrode is formed by: (a) forming a doped polysilicon layer and a rugged polysilicon layer over the substrate surface, and (b) patterning said doped polysilicon layer, said rugged polysilicon layer, and said first conductive layer thereby forming an opening that exposes the first insulation layer, said doped polysilicon layer having a thickness in a range of between about 400 and 1000 Å, said doped polysilicon layer and said rugged polysilicon layer having a doping concentration in a range of between about 1E20 and 1E21 atoms/cm.sup.3.
An appropriately doped polysilicon layer, and an insulating layer are deposited over the gate oxide layer and conventional photolithographic techniques are used to pattern them into a transfer gate comprising a gate oxide 14, a gate electrode 16, and the gate insulating layer 18. As shown in FIG. 1, transfer gates 14 16 18 are formed over the field oxide layer 12 and on the substrate disposed between a source (node contact) 8 and a drain 4. Often, the gate electrodes formed over the field oxide form the word lines that electrically connect to the appropriate peripheral circuits on the DRAM chip. The lightly doped source/drain(shown with the source/drain 8 4) of the N-channel MOSFET is formed next, usually by implanting an N-type atomic species such as arsenic or phosphorus through the spaces between the gate electrodes 14 16 18. For example, a typical implant might consist of phosphorus P31 at a dose of between about 1 to 10E13 atoms/cm.sup.2 and at an energy between about 30 to 80 Kev.
These sidewall spacers 20 are formed by depositing a low temperature silicon oxide and anisotropically etching back to the silicon surface. For example, the silicon oxide could be formed using a chemical vapor deposition using tetraethoxysilane (TEOS) at a temperature in the range of about 650 pressure reactive ion etcher.
The source/drain regions 8 4 of the MOSFET are now implanted between the spacers 20 with a N type atomic species, for example, arsenic (As75), to complete the source/drain 8 4. The implantation is usually done through a thin layer of silicon oxide of about 200 to 300 Å in thickness to minimize implant channeling and to protect against contamination by metals and other impurities. A typical implantation dose is between 2E15 to 1E16 atoms/cm.sup.2 and an energy of between about 20 to 70 Kev.
Next, bit line contact holes are opened in the dielectric insulating layer 28 over the drains 4. This can be accomplished with conventional photo masking and etching processes. A conductive layer is then formed over the dielectric insulating layer 28 and fills the bit line contact hole. The conductive layer is preferably formed of a polysilicon layer (24) and a tungsten silicide (Wsi.sub.x) layer (26). The conductive line is then patterned to form a bit line 24 26. The polysilicon layer 24 preferably has a thickness in the range of between about 500 and 1000 Å and preferably has a doping concentration in the range of between about 1E20 and 1E21 atoms/cm.sup.3. The tungsten silicide layer 26 preferably has a thickness in the range of between about 1000 and 1500 Å.
Still referring to FIG. 1, a first insulation layer 30 is formed over the dielectric layer 28 and bit line 24 26. The first insulation layer 30 is preferably formed of a silicon oxide, such as an undoped silicon glass, formed by atmospheric TEOS process at a temperature in the range of between about 690 preferably has a thickness in the range of between about 2000 and 4000 Å and more preferably about 3000 Å. Preferably, to planarized the first insulation layer 30, a spin-on-glass (SOG) (not shown) layer having a thickness of about 2000 Å is formed over the first insulation layer 30. Next, an oxide etch is used to etch back the spin-on-glass layer and the first insulation layer 30 by about a total of 3000 Å to form a planar surface.
As shown in FIG. 1, a first conductive layer 32 is formed over the first insulation layer 30. The first conductive layer is preferably composed of doped or undoped polysilicon. A doped polysilicon conductive layer is preferably formed using a LPCVD reactor at a process temperature of between about 550 be doped N-type by ion implantation using, for example, arsenic ions and having an implant dose of between about 1E15 to 20E15 atoms/cm.sup.2 and an ion energy of between about 20 to 80 Kev. Alternatively, the polysilicon layer can be doped in situ during the polysilicon deposition. Alternately, an undoped polysilicon layer 32 can be doped by a subsequent overlying layer 38 or 42 (see FIG. 4). The first conductive layer 32 preferably has a thickness in the range between about 500 to 1500 Å and more preferably a thickness of about 1000 Å. The first conductive layer preferably has an impurity concentration in the range of between about 1E20 and 1E21 atoms/cm.sup.3 and more preferably about 5E20 atoms/cm.sup.3. The first conductive layer 32 functions as an etch stop of a subsequent etch of layer 36. (See FIGS. 2 and 3.)
A first masking layer (i.e., second insulation layer) 34 is then formed over the first conductive layer 32. The first masking layer is patterned to form a first opening 36 over the source 8. An embodiment of the invention is where the first conductive layer 32 is patterned with the same process so that the first opening 36 extends through the first conductive layer 32 thereby exposing the first insulation layer 30. The first masking layer 34 has vertical sidewalls 39 that define the first openings. The first opening can have any shape, such as circular, rectangular, square; and preferably is rectangular. A rectangular shaped first opening 36 preferably has a length and width (L range of between about 0.3.times7 and 0.4.times8 μm.sup.2 and more preferably about 0.5.times.7 μm.sup.2. The first masking layer 34 is preferably formed of undoped silicon glass having a thickness in the range of between about 4000 and 6000 Å and more preferably about 5000 Å.
As shown in FIG. 2, first sidewall spacers 38 are formed on the sidewalls 39 of the first opening 36 in the first masking layer 34. The sidewall spacers 39 define a second opening 40 (i.e., the beginning of the node contact opening). The sidewall spacers can be formed by deposition a polysilicon layer over the surface and anisotropically etching back. The etch back can also etch and remove the underlying first conductive layer 32 in the opening between the spacers 38 over the source 8 if the first conductive layer 32 was not etched out earlier during the patterning of the first masking layer 32. (See above). The first sidewall spacers 38 have a thickness in the range of between about 500 and 1000 Å and are preferably formed of polysilicon. The spacers 38 are formed over the active area associated with the transistor. The distance between the inside walls of the spacers 38 is preferably in the range of between about 1000 and 3000 Å, and more preferably about 2000 Å. The spacers 38 preferably have a height in the range of between about 3000 and 5000 Å and more preferably about 4000 Å. The spacers 38 are preferably doped with an impurity concentration in the range of between about 1E20 and 1E21 atoms/cm.sup.3.
As shown in FIG. 3, the first insulation layer 28 30 and conformal dielectric layer 32 are anisotropically etched using the first masking layer/upper spacers 38 and the lower spacers (i.e., transfer gate spacers 20) as masks. The etch exposes the source 8. The first conductive layer 32 acts as an etch barrier. This etch step completes the formation of the node contact hole 41. The node contact opening 41 is defined by the first sidewall spacers 38; the transfer gate sidewall spaces 20, sidewalls of the first insulation layer 36A and the sidewalls of the first conductive layer 32. The etch is preferably an oxide etch using a RIE etch using C.sub.3 F.sub.8 +CO etchants in a timed mode. The anisotropic etch has a high selectivity to etch silicon oxide over silicon nitride and silicon.
As shown in FIGS. 4 and 5, a third conductive layer 42, 44 is then formed over the first sidewall spacers 38 and fills the contact hole 41. The conductive layer 42, 44 contacts the source 08. The conductive layer is preferably formed of two layers 42, 44. The bottom layer 42 is preferably a polysilicon layer. The polysilicon layer 42 is preferably doped with an impurity concentration in the range of between about 1E20 and 1E21 atoms/cm.sup.3 and preferably has a thickness in the range of between about 400 and 1000 Å and more preferably about 500 Å. The doped polysilicon layer 42 can be formed by an in situ doping process. The upper layer 44 is preferably a hemispherical silicon grain (HSG) layer (or rugged polysilicon layer) which is used to increase the surface area and capacitance of the device. The rugged polysilicon layer 44 can have a thickness in the range of between about 500 and 1500 Å and more preferably about 1000 Å.
The rugged polysilicon layer 44 (e.g., hemispherical grain silicon) can be formed by any conventional low temperature deposition and/or anodic process. For example, polysilicon can be deposited from the decomposition of silane SiH.sub.4 in a hot wall vertical LPCVD reactor, at a pressure of about 0.2 torr and a temperature of about 560 hemispherical shaped grains (HSG) having a diameter of about 800 Å. Using a temperature of 565 must be used to carefully control the temperature in the reactor during deposition since deposition deposited films can become amorphous if the temperature falls to about 550
Next, a capacitor dielectric layer 48 is formed over the first electrode 42 44 as shown in FIG. 6. The material of the dielectric layer 48 can be any suitable material having a high dielectric constant and being continuous and pinhole free. The conformal dielectric layer 42 can be formed of silicon nitride, an oxide/nitride/oxide (ONO) film, tantalum pentoxide (Ta.sub.2 O.sub.5), or silicon oxide material. Preferably, the conformal dielectric layer is formed of the three layer structure of silicon oxide/silicon nitride/silicon oxide (ONO). The conformal dielectric layer 48 preferably has a thickness in the range between about 40 and 60 Å and more preferably about 55 Å.
A top electrode 50 is then formed over the dielectric layer 48. This is accomplished by forming a third conductive layer over the substrate surface. The third conductive layer is masked and etched, using conventional photolithographic techniques, to form the top plate electrode 50 as shown in FIG. 6. The top electrode 50 can have a thickness in the range between about 500 and 2000 Å and more preferably about 1000 Å. The top plate electrode 50 is preferably formed a polycrystalline silicon doped with an impurity. The top plate electrode 50 preferably has an impurity concentration in the range of between about 1E20 and 1E21 atoms/cm.sup.3 and more preferably about 5E20 atoms/cm.sup.3.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS5164881 *Dec 30, 1991Nov 17, 1992Samsung Electronics Co., Ltd.Highly integrated semiconductor memory device and the fabrication method thereofUS5185282 *Oct 24, 1990Feb 9, 1993Electronics And Telecommunications Research InstituteMethod of manufacturing DRAM cell having a cup shaped polysilicon storage electrodeUS5234855 *Dec 21, 1990Aug 10, 1993Micron Technology, Inc.Stacked comb spacer capacitorUS5380673 *May 6, 1994Jan 10, 1995United Microelectronics CorporationDram capacitor structureUS5409855 *Oct 13, 1992Apr 25, 1995Goldstar Electron Co., Ltd.Process for forming a semiconductor device having a capacitorUS5444010 *May 13, 1994Aug 22, 1995Hyundai Electronics Industries, Ltd.Method for forming a stacked capacitor in a semiconductor device* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS5648291 *Jun 3, 1996Jul 15, 1997Vanguard International Semiconductor CorporationMethod for fabricating a bit line over a capacitor array of memory cellsUS5700710 *Nov 6, 1995Dec 23, 1997Nec CorporationProcess of fabricating capacitor having waved rough surface of accumulating electrodeUS5736441 *Mar 15, 1996Apr 7, 1998United Microelectronics CorporationHigh-capacitance dynamic random access memory cell and method for fabricating the sameUS5760434 *May 7, 1996Jun 2, 1998Micron Technology, Inc.Increased interior volume for integrated memory cellUS5789289 *Jun 18, 1996Aug 4, 1998Vanguard International Semiconductor CorporationMethod for fabricating vertical fin capacitor structuresUS5792689 *Apr 11, 1997Aug 11, 1998Vanguard International Semiconducter CorporationMethod for manufacturing double-crown capacitors self-aligned to node contacts on dynamic random access memoryUS5792692 *Aug 18, 1997Aug 11, 1998Chartered Semiconductor Manufacturing, Ltd.Method of fabricating a twin hammer tree shaped capacitor structure for a dram deviceUS5817579 *Apr 9, 1997Oct 6, 1998Vanguard International Semiconductor CorporationTwo step plasma etch method for forming self aligned contactUS5821152 *Oct 15, 1997Oct 13, 1998Samsung Electronics Co., Ltd.Methods of forming hemispherical grained silicon electrodes including multiple temperature stepsUS5837576 *Oct 31, 1997Nov 17, 1998Vanguard International Semiconductor CorporationMethod for forming a capacitor using a silicon oxynitride etching stop layerUS5843821 *Jun 4, 1997Dec 1, 1998Vanguard International Semiconductor CorporationFabrication method for a cylindrical capacitor for a semiconductor deviceUS5854095 *Jan 2, 1997Dec 29, 1998Samsung Electronics Co., Ltd.Dual source gas methods for forming integrated circuit capacitor electrodesUS5854135 *Apr 9, 1997Dec 29, 1998Vanguard International Semiconductor CorporationOptimized dry etching procedure, using an oxygen containing ambient, for small diameter contact holesUS5858831 *Feb 27, 1998Jan 12, 1999Vanguard International Semiconductor CorporationProcess for fabricating a high performance logic and embedded dram devices on a single semiconductor chipUS5858835 *Dec 22, 1997Jan 12, 1999Nan Ya Technology CorporationMethod for fabricating a capactior in a DRAM cellUS5858837 *Nov 10, 1997Jan 12, 1999Nec CorporationMethod of manufacturing semiconductor memory deviceUS5885867 *Dec 3, 1997Mar 23, 1999Samsung Electronics Co., Ltd.Methods of forming hemispherical grained silicon layers including anti-nucleation gasesUS5923973 *Oct 24, 1997Jul 13, 1999Vanguard International Semiconductor CorporationMethod of making greek letter psi shaped capacitor for DRAM circuitsUS5928967 *Jun 10, 1996Jul 27, 1999International Business Machines CorporationSelective oxide-to-nitride etch process using C.sub.4 F.sub.8 /CO/ArUS5930623 *Jan 12, 1998Jul 27, 1999United Microelectronics, CorporationMethod of forming a data storage capacitor with a wide electrode area for dynamic random access memory using double spacersUS5943584 *Nov 21, 1997Aug 24, 1999Samsung Electronics Co., Ltd.Annealing methods of doping electrode surfaces using dopant gasesUS5960281 *May 22, 1997Sep 28, 1999Samsung Electronics Co., Ltd.Methods of fabricating microelectronic electrode structures using hemispherical grained (HSG) siliconUS5963804 *Mar 14, 1997Oct 5, 1999Micron Technology, Inc.Method of making a doped silicon structure with impression image on opposing roughened surfacesUS5963805 *Jun 27, 1997Oct 5, 1999Samsung Electronics Co., Ltd.Method for forming integrated circuit capacitors including dual layer electrodesUS5966610 *Jan 5, 1998Oct 12, 1999Nan Ya Technology Corp.Method of fabricating capacitor plateUS5966612 *Dec 22, 1997Oct 12, 1999Texas Instruments Acer IncorporatedMethod of making a multiple mushroom shape capacitor for high density DRAMsUS5981334 *Nov 6, 1997Nov 9, 1999Chien; Sun-ChiehMethod of fabricating DRAM capacitorUS5989954 *Mar 5, 1998Nov 23, 1999Taiwan Semiconductor Manufacturing Company, Ltd.Method for forming a cylinder capacitor in the dram processUS6004858 *Dec 11, 1997Dec 21, 1999Samsung Electronics Co., Ltd.Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layersUS6010933 *Jul 17, 1998Jan 4, 2000Vanguard International SemiconductorMethod for making a planarized capacitor-over-bit-line structure for dynamic random access memory (DRAM) devicesUS6018175 *Sep 3, 1998Jan 25, 2000Micron Technology, Inc.Gapped-plate capacitorUS6037209 *Jul 28, 1997Mar 14, 2000Siemens AktiengesellschaftMethod for producing a DRAM cellular arrangementUS6046093 *Jun 13, 1997Apr 4, 2000Micron Technololgy, Inc.Method of forming capacitors and related integrated circuitryUS6048763 *Aug 21, 1997Apr 11, 2000Micron Technology, Inc.Integrated capacitor bottom electrode with etch stop layerUS6074955 *Nov 9, 1998Jun 13, 2000United Microelectronics Corp.Method of fabricating a node contact window of DRAMUS6077573 *May 22, 1998Jun 20, 2000Samsung Electronics Co., Ltd.Plasma enhanced chemical vapor deposition methods of forming hemispherical grained silicon layersUS6087226 *Mar 26, 1998Jul 11, 2000Samsung Electronics Co., Ltd.Methods of forming capacitors including electrodes with hemispherical grained silicon layers on sidewalls thereof and related structuresUS6090655 *Feb 19, 1998Jul 18, 2000Micron Technology, Inc.Increased interior volume for integrated memory cellUS6093617 *May 19, 1997Jul 25, 2000Taiwan Semiconductor Manufacturing CompanyProcess to fabricate hemispherical grain polysiliconUS6117692 *Jan 14, 1998Sep 12, 2000Kim; Young-SunCalibrated methods of forming hemispherical grained silicon layersUS6121085 *Jan 20, 1998Sep 19, 2000United Microelectronics Corp.Method of fabricating contact openings for dynamic random-access memoryUS6127221 *Sep 10, 1998Oct 3, 2000Vanguard International Semiconductor CorporationIn situ, one step, formation of selective hemispherical grain silicon layer, and a nitride-oxide dielectric capacitor layer, for a DRAM applicationUS6146940 *Dec 30, 1997Nov 14, 2000United Microelectronics Corp.Method of fabricating a dynamic random access memory deviceUS6153465 *Jan 20, 1998Nov 28, 2000United Microelectronics Corp.Method of fabricating a capacitor of dynamic random access memoryUS6159820 *Mar 30, 1999Dec 12, 2000Samsung Electronics Co., Ltd.Method for fabricating a DRAM cell capacitorUS6159849 *Feb 9, 1998Dec 12, 2000Samsung Electronics Co., Ltd.Methods of forming nitride dielectric layers having reduced exposure to oxygenUS6162677 *Sep 10, 1998Dec 19, 2000Oki Electric Industry Co., Ltd.Semiconductor device fabricating methodUS6168992Oct 28, 1998Jan 2, 2001Samsung Electronics Co., Ltd.Methods for forming electrodes including sacrificial layersUS6190992 *Jul 15, 1996Feb 20, 2001Micron Technology, Inc.Method to achieve rough silicon surface on both sides of container for enhanced capacitance/area electrodesUS6194263Oct 9, 1996Feb 27, 2001Samsung Electronics Co., Ltd.Methods for forming capacitor structures including etching pitsUS6207526 *Jul 14, 1999Mar 27, 2001Acer Semiconductor Manufacturing Corp.Method of fabricating an extended self-aligned crown-shaped rugged capacitor for high density DRAM cellsUS6218260Mar 6, 1998Apr 17, 2001Samsung Electronics Co., Ltd.Methods of forming integrated circuit capacitors having improved electrode and dielectric layer characteristics and capacitors formed therebyUS6222222Sep 17, 1998Apr 24, 2001Micron Technology, Inc.Methods of forming capacitors and related integrated circuitryUS6228738Nov 20, 1998May 8, 2001Micron Technology, Inc.Methods of forming capacitors structures and DRAM cellsUS6238968Mar 16, 2000May 29, 2001Samsung Electronics Co., Ltd.Methods of forming integrated circuit capacitors having protected layers of HSG silicon thereinUS6238971Feb 11, 1997May 29, 2001Micron Technology, Inc.Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structuresUS6245632Jan 26, 1998Jun 12, 2001Samsung Electronics Co., Ltd.Variable temperature methods of forming hemispherical grained silicon (HSG-Si) layersUS6255687Sep 29, 1999Jul 3, 2001Micron Technology, Inc.Doped silicon structure with impression image on opposing roughened surfacesUS6261968 *Feb 4, 2000Jul 17, 2001United Microelectronics Corp.Method of forming a self-aligned contact hole on a semiconductor waferUS6297525 *Jul 30, 1998Oct 2, 2001Micron Technology , Inc.Capacitor structures, DRAM cell structures, and integrated circuitryUS6303953Jan 29, 1999Oct 16, 2001Micron Technology, Inc.Integrated capacitor bottom electrode with etch stop layerUS6303956Feb 26, 1999Oct 16, 2001Micron Technology, Inc.Conductive container structures having a dielectric capUS6316326Jan 13, 1999Nov 13, 2001Micron Technology, Inc.Gapped-plate capacitorUS6344389Apr 19, 1999Feb 5, 2002International Business Machines CorporationSelf-aligned damascene interconnectUS6358793Feb 26, 1999Mar 19, 2002Micron Technology, Inc.Method for localized masking for semiconductor structure developmentUS6376384Apr 24, 2000Apr 23, 2002Vanguard International Semiconductor CorporationMultiple etch contact etching method incorporating post contact etch etchingUS6385020Jan 19, 2000May 7, 2002Samsung Electronics Co., Ltd.Methods of forming HSG capacitors from nonuniformly doped amorphous silicon layers and HSG capacitors formed therebyUS6395613 *Aug 30, 2000May 28, 2002Micron Technology, Inc.Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contactsUS6403495Dec 21, 2000Jun 11, 2002Samsung Electronics Co., Ltd.Capacitor fabricating method of semiconductor deviceUS6404005Mar 29, 2001Jun 11, 2002Micron Technology, Inc.Methods of forming capacitors and related integrated circuitryUS6410380Oct 4, 2001Jun 25, 2002Micron Technology, Inc.Method for making semiconductor device incorporating and electrical contact to an internal conductive layerUS6448146May 22, 2001Sep 10, 2002Samsung Electronics Co., Ltd.Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodesUS6469336Jul 23, 2001Oct 22, 2002Micron Technology, Inc.Structure for reducing contact aspect ratiosUS6498363Aug 31, 2000Dec 24, 2002Micron Technology, Inc.Gapped-plate capacitorUS6500709Jan 22, 2001Dec 31, 2002Micron Technology, Inc.Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structuresUS6507065Jul 2, 2001Jan 14, 2003Micron Technology, Inc.Doped silicon structure with impression image on opposing roughened surfacesUS6511874 *Jul 24, 2001Jan 28, 2003Stmicroelectronics S.R.L.Integrated circuit structure comprising capacitor element and corresponding manufacturing processUS6528436Feb 17, 2000Mar 4, 2003Micron Technology. Inc.Method of forming silicon nitride layer directly on HSG polysiliconUS6534389Mar 9, 2000Mar 18, 2003International Business Machines CorporationDual level contacts and method for formingUS6559494Aug 11, 1997May 6, 2003Mitsubishi Denki Kabushiki KaishaSemiconductor device and a method for fabricating the sameUS6573554Jul 24, 2001Jun 3, 2003Micron Technology, Inc.Localized masking for semiconductor structure developmentUS6593203Apr 10, 2002Jul 15, 2003Micron Technology, Inc.Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contactsUS6624069Dec 12, 2000Sep 23, 2003Samsung Electronics Co., Ltd.Methods of forming integrated circuit capacitors having doped HSG electrodesUS6630706 *Aug 30, 2001Oct 7, 2003Micron Technology, Inc.Localized array threshold voltage implant to enhance charge storage within DRAM memory cellsUS6635917Dec 12, 2001Oct 21, 2003Micron Technology, Inc.Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contactsUS6638818 *Oct 4, 1996Oct 28, 2003Texas Instruments IncorporatedMethod of fabricating a dynamic random access memory with increased capacitanceUS6639266Aug 30, 2000Oct 28, 2003Micron Technology, Inc.Modifying material removal selectivity in semiconductor structure developmentUS6670238Nov 28, 2001Dec 30, 2003Micron Technology, Inc.Method and structure for reducing contact aspect ratiosUS6677636Sep 4, 2002Jan 13, 2004Micron Technology, Inc.Structure for reducing contact aspect ratiosUS6686234 *Aug 3, 2000Feb 3, 2004Fujitsu LimitedSemiconductor device and method for fabricating the sameUS6720609Sep 4, 2002Apr 13, 2004Micron Technology, Inc.Structure for reducing contact aspect ratiosUS6746917Nov 6, 2002Jun 8, 2004Micron Technology, Inc.Semiconductor processing methods of forming a plurality of capacitors on a substrate, bit line contacts and method of forming bit line contactsUS6753219Aug 23, 2002Jun 22, 2004Hitachi, Ltd.Method of manufacturing semiconductor integrated circuit devices having a memory device with a reduced bit line stray capacity and such semiconductor integrated circuit devicesUS6764916 *Sep 29, 1999Jul 20, 2004Hitachi Kokusai Electric Inc.Manufacturing method for semiconductor deviceUS6774421Nov 1, 2002Aug 10, 2004Micron Technology, Inc.Gapped-plate capacitorUS6780704 *Dec 3, 1999Aug 24, 2004Asm International NvConformal thin films over textured capacitor electrodesUS6800520 *Aug 30, 2002Oct 5, 2004Micron Technology, Inc.Localized array threshold voltage implant enhance charge storage within DRAM memory cellsUS6815287May 14, 2003Nov 9, 2004Micron Technology, Inc.Localized array threshold voltage implant to enhance charge storage within DRAM memory cellsUS6831315Feb 22, 2001Dec 14, 2004Asm International N.V.Conformal thin films over textured capacitor electrodesUS6833579Aug 30, 2001Dec 21, 2004Micron Technology, Inc.Conductive container structures having a dielectric capUS6864138Dec 4, 2002Mar 8, 2005Micron Technology, Inc.Methods of forming capacitor structures and DRAM arraysUS6876029Aug 5, 2003Apr 5, 2005Samsung Electronics Co., Ltd.Integrated circuit capacitors having doped HSG electrodesUS6878587Nov 17, 2003Apr 12, 2005Micron Technology, Inc.Method and structure for reducing contact aspect ratiosUS6936899Dec 11, 2003Aug 30, 2005Micron Technology, Inc.Bit line contactsUS6946357Aug 30, 2001Sep 20, 2005Micron Technology, Inc.Conductive container structures having a dielectric capUS6946701Jul 31, 2003Sep 20, 2005Texas Instruments IncorporatedMethod for forming a memory integrated circuit with bitlines over gates and capacitors over bitlinesUS6958901May 25, 2004Oct 25, 2005Micron Technology, Inc.Gapped-plate capacitorUS6969649Mar 29, 2004Nov 29, 2005Hitachi, Ltd.Method of manufacturing semiconductor integrated circuit devices having a memory device with a reduced bit line stray capacity and such semiconductor integrated circuit devicesUS7015529Jun 3, 2003Mar 21, 2006Micron Technology, Inc.Localized masking for semiconductor structure developmentUS7049244Aug 6, 2001May 23, 2006Micron Technology, Inc.Method for enhancing silicon dioxide to silicon nitride selectivityUS7151291Mar 7, 2005Dec 19, 2006Micron Technology, Inc.Capacitor structures, DRAM cell structures, and integrated circuitry, and methods of forming capacitor structures, integrated circuitry and DRAM cell structuresUS7151659Jan 18, 2005Dec 19, 2006Micron Technology, Inc.Gapped-plate capacitorUS7199415Aug 31, 2004Apr 3, 2007Micron Technology, Inc.Conductive container structures having a dielectric capUS7268072Mar 23, 2005Sep 11, 2007Micron Technology, Inc.Method and structure for reducing contact aspect ratiosUS7298000Jul 17, 2006Nov 20, 2007Micron Technology, Inc.Conductive container structures having a dielectric capUS7375033Nov 14, 2003May 20, 2008Micron Technology, Inc.Multi-layer interconnect with isolation layerUS7468534Aug 30, 2005Dec 23, 2008Micron Technology, Inc.Localized masking for semiconductor structure developmentUS7642651Nov 16, 2006Jan 5, 2010Micron Technology, Inc.Multi-layer interconnect with isolation layerUS7662648Aug 31, 2005Feb 16, 2010Micron Technology, Inc.Integrated circuit inspection systemUS7868369Nov 21, 2008Jan 11, 2011Micron Technology, Inc.Localized masking for semiconductor structure developmentUS8049514Feb 12, 2010Nov 1, 2011Micron Technology, Inc.Integrated circuit inspection systemEP0825650A2 *Aug 20, 1997Feb 25, 1998Texas Instruments Inc.DRAM cell with stacked capacitorEP0844667A2 *Nov 14, 1997May 27, 1998Texas Instruments IncorporatedStorage capacitor for DRAM memory cell and the process of fabricating the sameEP1170785A2 *Jun 22, 2001Jan 9, 2002Infineon Technologies AGProcess for forming microroughness on a surface* Cited by examinerClassifications U.S. Classification438/396, 257/E21.12, 257/E27.89, 257/E21.648, 438/398International ClassificationH01L21/8242, H01L21/02, H01L27/108Cooperative ClassificationH01L28/82, H01L27/10852, H01L27/10817European ClassificationH01L27/108M4B2, H01L28/82, H01L27/108F2MLegal EventsDateCodeEventDescriptionJan 15, 2011ASAssignmentFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION;REEL/FRAME:025645/0397Effective date: 20101026Owner name: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., TAIWJan 25, 2008FPAYFee paymentYear of fee payment: 12Mar 10, 2004FPAYFee paymentYear of fee payment: 8Jan 24, 2000FPAYFee paymentYear of fee payment: 4Feb 2, 1996ASAssignmentOwner name: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION,Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KOH, CHAO-MING;REEL/FRAME:007848/0441Effective date: 19960121RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google

value: This website is a search engine provided by Google. Handling over 3.5 billion searches per day, it has a 92% share of the global search engine market.


text:
Product - The Consummation. a Sacred Ode, on the Final Dissolution of the World: By Thomas Newcomb.
The Consummation. a Sacred Ode, on the Final Dissolution of the World: By Thomas Newcomb.
Product - Vindicta Britannica, an Ode on the Royal Navy. Inscribed to the King. by the REV. Mr. Newcomb.
Product - Bibliotheca : A Poem. Occasion'd by the Sight of a Modern Library. with Some Very Useful Episodes, and Digressions. the Second Edition.
Bibliotheca : A Poem. Occasion'd by the Sight of a Modern Library. with Some Very Useful Episodes, and Digressions. the Second Edition.
Product - Novus Epigrammatum Delectus : Or, Original State Epigrams, and Minor Odes: Suited to the Times. All Written by the Same Author.
Novus Epigrammatum Delectus : Or, Original State Epigrams, and Minor Odes: Suited to the Times. All Written by the Same Author.
Product - The Manners of the Age : In Thirteen Moral Satirs. Written with a Design to Expose the Vicious and Irregular Conduct of Both Sexes, in the Various Pursuits of Life.
Product - Pacata Britannia. a Panegyrick to the Queen, on the Peace, and the Interest of the British Nation. by Mr. T. N.
Product - Vindicta Britannica : An Ode, to the Real Patriot. Occasioned by the Declaration of War Against Spain.
Vindicta Britannica : An Ode, to the Real Patriot. Occasioned by the Declaration of War Against Spain.
Product - The Woman of Taste. Occasioned by a Late Poem, Entitled, the Man of Taste. by a Friend of the Author's. in Two Epistles, from Clelia in Town to Sapho in the Country.
The Woman of Taste. Occasioned by a Late Poem, Entitled, the Man of Taste. by a Friend of the Author's. in Two Epistles, from Clelia in Town to Sapho in the Country.
Product - Bibliotheca : A Poem. Occasion'd by the Sight of a Modern Library. with Some Very Useful Episodes, and Digressions.
Bibliotheca : A Poem. Occasion'd by the Sight of a Modern Library. with Some Very Useful Episodes, and Digressions.
Product - A Supplement to One Thousand Seven Hundred Thirty-Eight. Not Written by Mr. Pope.
A Supplement to One Thousand Seven Hundred Thirty-Eight. Not Written by Mr. Pope.
Product - A Supplement to a Late Excellent Poem, Entitled, Are These Things So? Addressed to the * * * *.
A Supplement to a Late Excellent Poem, Entitled, Are These Things So? Addressed to the * * * *.
Product - Verses Left in a Grotto in Richmond Garden. to Which Are Added, Several Odes on the Battle of Dettingen.
Verses Left in a Grotto in Richmond Garden. to Which Are Added, Several Odes on the Battle of Dettingen.
Product - The Oracle, an Ode Inscrib'd to the Right Honourable Sir Edward Hawke, ...
Product - The Last Judgment of Men and Angels. a Poem in Twelve Books : After the Manner of Milton by the Reverend Mr. Thomas Newcomb, ...
The Last Judgment of Men and Angels. a Poem in Twelve Books : After the Manner of Milton by the Reverend Mr. Thomas Newcomb, ...
Product - Sacred Hymns : Or, an Attempt to Discover and Revive the Original Spirit, Elevation, and Beauty, of Some of the Select Psalms. to Which Is Added, an Ode on the Agony of the Messiah. by the Reverend Mr. Newcomb, ...
Sacred Hymns : Or, an Attempt to Discover and Revive the Original Spirit, Elevation, and Beauty, of Some of the Select Psalms. to Which Is Added, an Ode on the Agony of the Messiah. by the Reverend Mr. Newcomb, ...
Product - An Epistle from the Duke of Burgundy to the French King. by Tho. Newcomb, ...
An Epistle from the Duke of Burgundy to the French King. by Tho. Newcomb, ...
Product - Novus Epigrammatum Delectus or Original State Epigrams and Minor Odes : Suited to the Times (1760)
Novus Epigrammatum Delectus or Original State Epigrams and Minor Odes : Suited to the Times (1760)
Product - Vindicta Britannica, an Ode on the Royal Navy, Etc.
Product - The Retired Penitent. Being a Poetical Version of One of the Rev. Dr. Young's Moral Contemplations. Revis'd, Approv'd, and Publish'd with the Consent of That Learned and Eminent Writer.
Product - An Ode to the Queen. on the Happy Accession of Their Majesties to the Crown.
An Ode to the Queen. on the Happy Accession of Their Majesties to the Crown.
Product - A Supplement to One Thousand Seven Hundred Thirty-Eight : Not Written by Mr. Pope (1738)
A Supplement to One Thousand Seven Hundred Thirty-Eight : Not Written by Mr. Pope (1738)
Product - Blasphemy as Old as the Creation : Or, the Newgate Divine. a Satyr. Address'd to the Modern Advocates of Irreligion, Prophaneness, and Infidelity. by a Gentleman and a Christian
Product - Blasphemy as Old as the Creation : Or the Newgate Divine, a Satyr (1730)
Blasphemy as Old as the Creation : Or the Newgate Divine, a Satyr (1730)
Product - Sacred Hymns; Or, an Attempt to Discover and Revive the Original Spirit, Elevation, and Beauty, of Some of the Select Psalms. to Which Is Added, an Ode on the Agony of the Messiah
Product - Novus Epigrammatum Delectus : Or, Original State Epigrams: And Minor Odes: Suited to the Times
Novus Epigrammatum Delectus : Or, Original State Epigrams: And Minor Odes: Suited to the Times
Product - The Manners of the Age : In Thirteen Moral Satirs. Written with a Design to Expose the Vicious and Irregular Conduct of Both Sexes, in the Various Pursuits of Life

value: This website is an American multinational retail corporation that operates a chain of hypermarkets , discount department stores, and grocery stores from the United States, headquartered in Bentonville, Arkansas.


text: We found 0 results for "" Check your spelling or use different keywords and try again. If you are searching for help information, please select "Help" from the list of departments and try the search again. Some products available in stores may not be listed online — contact your local store to see if they carry what you are looking for. Walmart Sterling 45415 Dulles Crossing Plz Sterling, VA 20166 Ph. (571) 434-9434 Find another store Showing 0 of 0 results Compute- app-11031075-5-50864081, DC- prod-dfw4, ENV- prod-a, Ver- 32.0.1, SHA- 218663fd569ac9bf392b2c78e3a7f424c761bb61, Log- 3045aab4-afcd-152df184c40000 Site Information Be the first to save! Email Address Sign up Privacy policy


text:
The person in the room directly above mine took... - Review of Hotel Tilsitt Etoile Paris - TripAdvisor
“The rooms are small but they are comfortable...”
“They are clean though and our room had a balcony...”
“Stayed in a ground floor single room for 3 nights...”
“We stayed on the top floor in room 604, with...”
“Our room on floor 6 had lovely views of Paris...”
“Close to a major Metro stop and the Arc but...”
“A/C in room not working on day of arrival fri...”
“Nice big windows in the room with a very pleasant...”
“We were told to leave the room at 12:00 fair...”
“I got a room with a mini balcony and I loved...”
The person in the room directly above mine took... - Review of Hotel Tilsitt Etoile Paris
23 rue Brey, 75017 Paris, France (Champs-Elysees) |
Ranked #657 of 1,812 Hotels in Paris
All reviews arc de triomphe great location metro station minute walk mini bar top floor stay there again rooms are small lovely hotel twin beds air conditioning croissants eiffel tower lots of restaurants street ternes french
88 - 94 of 507 reviews
Room Tip: 6th floor is the top floor so you wouldn't get any people walking above you! Hotel is on a littl...
This Hotel is our go to Hotel when in Paris. It is perfectly situated near the Arc de Triomphe and is a stones throw away from the Champs Elysees and the train station to Versaille. The Hotel itself is on a quiet street between to major streets with many cafe's, bistro's and restaurants to chose from. The rooms can be small (hey, it's Paris) but clean and comfy. It is very reasonably priced and well run. They serve a half decent breakfast with delicious croissants, coffee, cold cuts, fruit etc. The staff has always been friendly and helpful.
Ask EMPeep about Hotel Tilsitt Etoile Paris
Consistently good, nice rooms, helpful staff and good location. Business this time but suitable for couples too. There are some larger rooms if you are lucky! Breakfast fine with additional items if you prefer. Lift was an issue, it had broken down
Ask MCJK1 about Hotel Tilsitt Etoile Paris
#968 of 1,812 in Paris
#538 of 1,812 in Paris
#986 of 1,812 in Paris
#818 of 1,812 in Paris
#244 of 1,812 in Paris
#611 of 1,812 in Paris
Been to Hotel Tilsitt Etoile Paris? Share your experiences!
Address: 23 rue Brey, 75017 Paris, France
Two steps away from the Champs Elysees, the Arc de triomphe and the Palais des Congres, this charming 3 stars design hotel is the perfect place to stay, right in the heart of Paris... ... more less
TripAdvisor is proud to partner with Expedia, Booking.com, Hotels.com, Agoda, Travelocity, Orbitz, TripOnline SA, Priceline, Hotwire, Cancelon, HotelQuickly and getaroom.com so you can book your Hotel Tilsitt Etoile Paris reservations with confidence. We help millions of travelers each month to find the perfect hotel for both vacation and business trips, always with the best discounts and special offers.


text:
Extra FaceTime IDs, and Reordering Email - The New York Times
Personal Tech|Extra FaceTime IDs, and Reordering Email
By J. D. BIERSDORFER DEC. 3, 2013
A version of this article appears in print on December 5, 2013, on Page B11 of the New York edition with the headline: Extra FaceTime IDs, and Reordering Email. Order Reprints| Today's Paper|Subscribe

value: This website is an American daily newspaper based in New York City with a worldwide readership. Founded in 1851, the Times has since won 132 Pulitzer Prizes, the most of any newspaper, and has long been regarded within the industry as a national "newspaper of record".


text:
Amazon.com: Leetah the Witch and the Fight in the Forgotten Forest: The Greatest Minecraft Comics for Kids (Real Comics in Minecraft - Leetah the Witch Book 2) eBook: Calvin Crowther, Jared Smith: Kindle Store
Leetah the Witch and the Fight in the Forgotten Forest: The Greatest Minecraft Comics for Kids (Real Comics in Minecraft - Leetah the Witch Book 2) Kindle Edition
Book 2 of 3 in Real Comics In Minecraft - Leetah The Witch (3 Book Series)
The amazing back story of Leetah the witch
The back story of the not-so-wicked Minecraft witch and how she became what she is when Flash and Bones meet her in Episode 2 of the Flash and Bones series of Real Minecraft Comics.
Episode 2: The Fight in the Forgotten Forest
Leetah finds herself a prisoner of Herobrine, deep in the dungeons of Herobrine's Mansion.
During her escape she learns why Herobrine wants her and her potion making skills and of a secret weapon he is wanting her to help him create so he can become invincible and rule the world.
In order to stop him she must find the ingredients to the potion he wants to make for his secret weapon, then corrupt in so that it will defeat Herobrine instead of helping him to take over the world.
What you expect from Minecraft Comics, Herobrine Comics and Herobrine Books will never be the same after reading these Amazing Interactive Adventures of Leetah the Witch.
Comics in the Leetah the Witch series
- The Secret of Hero-brine Rising
- The Fight in the Forgotten Forest
- The Final Duel with Hero-brine
Length: 1635 pages Age Level: 7 - 17 Grade Level: 2 - 12
Amazing Minecraft Comics: Leetah the
Leetah the Witch and the Fight in the
Real Comics In Minecraft - Leetah
Flash and Bones and the Demon Zombie Curse: The Greatest Minecraft Comics for Kids (Real Comics In Minecraft - Flash And Bones Book 8)
Amazing Minecraft Comics: Flash and Bones: Bandit Origins - Revenge of the Raiders: The Greatest Minecraft Comics for Kids (Real Comics In Minecraft - Bandit Origins Book 1)
Flash and Bones and the Mysterious Bloodrock Mountains: The Greatest Minecraft Comics for Kids
Flash and Bones and the Secret in the Temple of Notch: The Greatest Minecraft Comics for Kids
File Size: 16590 KB
Print Length: 1635 pages
Publisher: Interactive Stories; 3 edition (November 21, 2014)
ASIN: B00PZCLZBQ
Amazon Best Sellers Rank: #456,647 Paid in Kindle Store (See Top 100 Paid in Kindle Store)
#526 in Kindle Store > Kindle eBooks > Comics & Graphic Novels > Graphic Novels > Mystery, Thriller & Suspense
#964 in Kindle Store > Kindle eBooks > Comics & Graphic Novels > Graphic Novels > Fantasy
#2587 in Kindle Store > Kindle eBooks > Comics & Graphic Novels > Fantasy
Great book! Love it. I really loved the pictures and the storyline. I really like this book a lot!!!! 😁
5.0 out of 5 starsGreat series for the Minecraft lover
Such a creative, fun product. If you like Minecraft, you'll enjoy this. If you know a kid who likes it, they'll enjoy it even more :-)
This was a pretty good comic. It could be linger though. That is a suggestion for the future. Have a nice day
5.0 out of 5 starsThis is an Adventurous comic
What I like about this book is the adventure in it. I would recommend people who like adventure books to read this. I rated this 5 star because this is a great book to read.
Good but not good enough suggestions diary of a wimpy villager but it is decent and can someone tell me how to post a trick in book
5.0 out of 5 starsBest book ever🐺😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸😸
Awesome🆒
This item: Leetah the Witch and the Fight in the Forgotten Forest: The Greatest Minecraft Comics for Kids (Real Comics in Minecraft - Leetah the Witch Book 2)
Amazing Minecraft Comics: Flash and Bones: Bandit Origins - Thieves in the Thick of it: The Greatest Minecraft Comics for Kids (Real Comics in Minecraft - Bandit Origins Book 3)
Amazing Minecraft Comics: Flash and Bones: Angel Origins - Woody and the Stolen Artifact: The Greatest Minecraft Comics for Kids (Real Comics in Minecraft - Angel Origins Book 1)
Ethan Sumsion
Flash and Bones: Grimm and the Reaper - The Dark One Awakens: The Greatest Minecraft Comics for Kids
Diary of Minecraft Skeleton Steve the Noob Years - Season 3 Episode 5 (Book 17): Unofficial Minecraft Books for Kids, Teens, & Nerds - Adventure Fan Fiction ... Collection - Skeleton Steve the Noob Years)
Flash and Bones and the Enderman Zombie Potion: The Greatest Minecraft Comics for Kids (Real Comics In Minecraft - Flash And Kindle Edition

value: This website is an American multinational technology company which focuses on e-commerce, cloud computing, digital streaming, and artificial intelligence.


text:
Ryan Snyder, Concorde Career Colleges Inc: Profile & Biography - Bloomberg
Chief Financial Officer Concorde Career Colleges Inc, PRESENT
Concorde Career Colleges Inc, 4/2011-UNKNOWN
VP/Controller Hostess Brands, FORMER
Rainbow Center for Communicative Disorders Board Member

value: This website is an international news agency headquartered in New York City and a division of Bloomberg L.P. Content produced by Bloomberg News is disseminated through Bloomberg Terminals, Bloomberg Television, Bloomberg Radio, Bloomberg Businessweek, Bloomberg Markets, Bloomberg.com, and Bloomberg's mobile platforms. Since 2015, John Micklethwait has served as editor-in-chief.


text:
Bruce Lee Behrens, Sr. Fowlerville - Age 73, passed away, Monday, November 20, 2017. Bruce was born August 1, 1944 in Midland, MI the son of Edgar and Gwendolyn Behrens. A Lansing resident most of his life, Bruce was a long time member of St. Casimir Catholic Church. Bruce...
Services by Palmer Bush& Jensen Family Funeral Homes Lansing Chapel - Lansing | Send Flowers ›
Search more results for Bruce Behrens ›
Published in Lansing State Journal on Nov. 23, 2017.
Patrick William Bradley DeWitt - Patrick William Bradley, age 52 of DeWitt, MI, passed away Wednesday, November 15, 2017 surrounded by his loving family. A Mass of Christian Burial will be held at St. Therese of Lisieux Parish, Lansing, MI on Monday, November 20, 2017 at...
Services by Smith Family Funeral Homes- Osgood Chapel, St. Johns | Send Flowers ›
Search more results for Patrick Bradley ›
Published in Lansing State Journal from Nov. 18 to Nov. 26, 2017.
Mary Krokker Lansing - Mary E. Krokker passed away November 20, 2017 at Fairview AFC under the care of their compassionate staff. She was born February 17, 1938 in Lansing, MI. She was preceded in death by her parents, William A. and Gladys Morefield; husband, James J....
Services by Tiffany Funeral Home | Send Flowers ›
Search more results for Mary Krokker ›
Robert Long (Bobby)
Robert (Bobby) Long Grayling - 34, died October 20, 2017. Arrangements by Sorenson-Lockwood Funeral Home. Memorial services Saturday, November 25th, 2017 2:00 p.m. Grayling Eagles, Grayling, MI.
Services by Sorenson-Lockwood Funeral Home Inc | Send Flowers ›
Kenneth Peake Grand Ledge - Kenneth L. Peake of Grand Ledge a loving husband, father, grandfather brother and friend passed way November 16, 2017. Ken was born November 25, 1929 in DeWitt to the late John and Fern (Parks) Peake. Ken served in the United States Army Air Corp...
Services by Holihan-Atkin-Barclay Funeral Home & Cremation Services | Send Flowers ›
Search more results for Kenneth Peake ›
Published in Lansing State Journal from Nov. 21 to Nov. 26, 2017.
Cheryl Lynn Quinn Mason - Cheryl Lynn Quinn of Mason passed away on November 14, 2017 at Sparrow Hospital at the age of 56. Cheryl was born at Mason General Hospital on October 20, 1961 to Lawrence and Carolyn Quinn. She lived in the Mason area most of her life. She was...
Services by Gorsline Runciman Funeral Homes | Send Flowers ›
Search more results for Cheryl Quinn ›
Brandi Megan Townsend Zeeland - Brandi Megan Townsend (Anderson) born January 22, 1967, suddenly passed away at her home in Zeeland, Michigan November 10, 2017. She is survived by husband Erik, daughter Mikah, son Parker, mother Nancy Patricia Anderson and brother Andrew L....
Search more results for Brandi Townsend ›
Published in Lansing State Journal from Nov. 19 to Nov. 26, 2017.
Sarah Jo Warfield
Sarah Jo Warfield Anaheim, CA - Visitation will be held on Monday, November 27, 2017 from 5:00-8:00 PM at the Palmer, Bush & Jensen Family Funeral Homes, Delta Chapel. A Funeral Mass will be held Tuesday at 10:30 AM at St. Gerard Catholic Church with visitation an hour prior....
Services by Palmer Bush & Jensen Family Funeral Homes Delta Chapel - Lansing | Send Flowers ›
Search more results for Sarah Warfield ›
Eva Lorraine Weber St. Johns - Eva Lorraine Weber, 83, of St. Johns, MI, passed away Thursday, November 16, 2017, at her home surrounded by her family and friends. A Mass of Christian Burial will be held at St. Joseph Catholic Church, St. Johns, MI, on Saturday, November...
Search more results for Eva Weber ›
Published in Lansing State Journal from Nov. 17 to Nov. 26, 2017.
John Wilson Houston, TX - John F, Wilson died 11/18/17 He is proceeded by his wife Lois A.Wilson in March 2000. He is survived by 6 children,14 grandchildren, and 3 great grand children John retired from General Motors Oldsmobile. The Funeral Mass will be celebrated...

value: This website is a United States-based website founded in 1998, the world's largest commercial provider of online memorials. The Web site hosts obituaries and memorials for more than 70 percent of all U.S. deaths.


text:
Shop "Cooperative Mood" Canvas Wall Art - Free Shipping Today - Overstock - 30186335
"Cooperative Mood" Canvas Wall Art
Solid-Faced Canvas Print entitled 'Cooperative Mood'. A contemporary abstract painting using pale blue and white tones in bold aggressive strokes. Multiple sizes available. Primary colors within this image include: Sky Blue, Black, White. Made in the USA. Satisfaction guaranteed. Inks used are latex-based and designed to last. Canvas is handcrafted and made-to-order in the United States using high quality artist-grade canvas. Featuring a proprietary design, our canvases produce the tightest corners without any bubbles, ripples, or bumps and will not warp or sag over time. SKU: 2445024
35068182

value: This website is an American internet retailer selling primarily furniture headquartered in Midvale, Utah, near Salt Lake City.


text:
By ROBIN FINN AUG. 5, 2011
ON THE PIER The ABC morning co-host with her terrier, K. J. Credit Michelle V. Agins/The New York Times
Robin Roberts has not made peace with her 3:45 a.m. wake-up time, but as co-host of “Good Morning America” alongside George Stephanopoulos, she morphs into an early bird on weekdays in full makeup, heels and no-repeat designer outfits. She is one of the all-time leading scorers for the women’s basketball team at Southeastern Louisiana University, and she was elected this year to the Women’s Basketball Hall of Fame. A breast cancer survivor, she is the author of “From the Heart: 7 Rules to Live By”; a revised paperback version with eight rules describes her experience with the disease. Ms. Roberts, 50, lives on the Upper West Side with her wire-haired Jack Russell terrier, K.J.; she also has a home in Farmington, Conn.
LATE START AT 6 I cannot sleep past 6 a.m., but that almost doubles the sleep I normally get. And I don’t grab for my BlackBerry, iPod, iPad gadgets either. I kind of just ease into the day.
INSPIRATIONAL READING I keep a little book called “Streams in the Desert” next to my bed, and that’s what I grab first thing. My grandmother read it, my mother reads it and so do I.
TV HABIT Now here’s the confession: I’m a “Law & Order” junkie, and there’s always an episode on somewhere on cable early in the morning, so if it’s not one I’ve already seen five times and know every word of dialogue to, then I gotta watch it. If there’s a “Law & Order” marathon, forget about it. I’m useless.
SUNDAY SWEATS I have to dress up for “G.M.A.,” but I’m not a clothes hound. I’m built for comfort, so I put on my baseball cap and sweats and tennis shoes. Something about tennis shoes equals total relaxation. It’s the athlete in me.
OUT WITH THE DOG By 8 or so, K. J. and I hit the road. I’m not a coffee drinker, but I go down to this little place by the pier and get a skim latte to take on our walk.
STROLL ALONG THE RIVER New York early on a summer Sunday is everything you could want. I love that no one is honking their horns and you can make eye contact; there’s not the hustle-bustle you get the rest of the time. We walk along the river and I’ll look over at New Jersey, which is where my dad was from. He passed in 2004, but just looking across the Hudson makes me feel close to him.
MINI-BREAKFAST I’ll grab a bagel on the way home or maybe cook up a couple of egg whites. My diet totally changed after cancer. Before, it would be a bacon and egg sandwich; now it’s a bagel and grapefruit juice. And more “Law & Order.”
GOSPEL BRUNCH WITH FRIENDS Sometimes I meet my girlfriends for the gospel brunch at Red Rooster. It really rocks. Or we might go for a late brunch at this new place in the neighborhood, The Yard.
PREP FOR MONDAY, MAYBE The show has a conference call from 3 to 4 where they run down all the news from the weekend so we can prep for Monday morning. I’m very good about listening in during the winter, but in the summer, I kind of fight it.
SHOPPING IN THE NABE I try to stock up on groceries at Jubilee, because when I don’t have healthy stuff around, I snack on junk food. Some afternoons I window-shop for clothes for the show. I wore the same pair of earrings for 15 years on ESPN, but when I wore them three days in a row on “G.M.A.,” I heard about it.
SIGNATURE DISH I don’t like to brag, but I do a mean turkey spaghetti: ground turkey, whole wheat pasta, a little wine, a salad, and that’s dinner if I have friends over. I go meatless on Mondays, so I like to bulk up on Sunday.
WORK BEFORE BED I get into work mode from 7 to 9, logging on, making calls, Skype-ing. I try to be in bed by 9, but it’s difficult; the sports person in me is nocturnal. Especially during March Madness or the NBA finals. Or when “Celebrity Apprentice” gets interesting.