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Patent US20030012058 - Voltage and temperature compensated pulse generator - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inAdvanced Patent SearchPatentsRamp comparator pulse generators having temperature and voltage compensation are adapted for use in integrated circuit devices such as memory devices. Such pulse generators include a ramp signal generator, a threshold signal generator, and a comparator providing an output signal in response to a difference...http://www.google.com/patents/US20030012058?utm_source=gb-gplus-sharePatent US20030012058 - Voltage and temperature compensated pulse generatorAdvanced Patent SearchPublication numberUS20030012058 A1Publication typeApplicationApplication numberUS 10/032,277Publication dateJan 16, 2003Filing dateDec 21, 2001Priority dateDec 28, 2000Also published asUS6643192, US6807111, US6898131, US20040037130, US20050024951Publication number032277, 10032277, US 2003/0012058 A1, US 2003/012058 A1, US 20030012058 A1, US 20030012058A1, US 2003012058 A1, US 2003012058A1, US-A1-20030012058, US-A1-2003012058, US2003/0012058A1, US2003/012058A1, US20030012058 A1, US20030012058A1, US2003012058 A1, US2003012058A1InventorsGiulio Marotta, Tommaso ValiOriginal AssigneeMarotta Giulio G., Tommaso ValiExport CitationBiBTeX, EndNote, RefManClassifications (20), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetVoltage and temperature compensated pulse generator
US 20030012058 A1Abstract
Ramp comparator pulse generators having temperature and voltage compensation are adapted for use in integrated circuit devices such as memory devices. Such pulse generators include a ramp signal generator, a threshold signal generator, and a comparator providing an output signal in response to a difference between the potential level of the threshold signal and the potential level of the ramp signal. The pulse generators described herein utilize an adaptive threshold signal generator configured as a voltage divider and having resistive components having differing effective temperature coefficients of resistivity. The adaptive threshold signal generator has an upper resistive component and a lower resistive component coupled in series between a high potential node and a low potential node. The lower resistive component has an effective temperature coefficient of resistivity that is less than an effective temperature coefficient of resistivity of the upper resistive component. Images(6) Claims(40)
What is claimed is: 1. A pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises: an upper resistive component coupled between a first potential node and an output node of the threshold signal generator, wherein the first potential node is coupled to receive a first potential; and a lower resistive component coupled between a second potential node and the output node of the threshold signal generator, wherein the second potential node is coupled to receive a second potential; wherein the upper resistive component has a first effective temperature coefficient of resistivity and the lower resistive component has a second effective temperature coefficient of resistivity lower than the first effective temperature coefficient of resistivity. 2. The pulse generator of claim 1, wherein the second potential is lower than the first potential. 3. The pulse generator of claim 1, wherein the second potential is higher than the first potential. 4. The pulse generator of claim 3, wherein the lower resistive component includes at least one resistive element having a negative temperature coefficient of resistivity. 5. The pulse generator of claim 2, wherein the upper resistive component has a positive effective temperature coefficient of resistivity. 6. The pulse generator of claim 5, wherein the upper resistive component includes at least one resistive element, each resistive element having a positive effective temperature coefficient of resistivity. 7. The pulse generator of claim 6, wherein each resistive element is a semiconductor resistor. 8. The pulse generator of claim 5, wherein the lower resistive component has a positive effective temperature coefficient of resistivity. 9. The pulse generator of claim 6, wherein the lower resistive component includes at least one resistive element having a temperature coefficient of resistivity lower than each resistive element of the upper resistive component. 10. The pulse generator of claim 2, wherein the lower resistive component includes at least one resistive element having a negative temperature coefficient of resistivity. 11. The pulse generator of claim 2, wherein the lower resistive component includes a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter. 12. The pulse generator of claim 11, further comprising at least one resistive element coupled in parallel with the bipolar junction transistor, having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor. 13. The pulse generator of claim 10, further comprising at least one resistive element coupled in series with the bipolar junction transistor, having an input coupled to the emitter of the bipolar junction transistor and an output coupled to the second potential node. 14. The pulse generator of claim 2, wherein the lower resistive component further comprises: a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter; a resistive element coupled in parallel with the bipolar junction transistor, having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor; and a resistive element coupled in series with the bipolar junction transistor, having an input coupled to the emitter of the bipolar junction transistor and an output coupled to the second potential node through a selective coupling device, wherein the selective coupling device is selectively activated in response to a control signal. 15. The pulse generator of claim 14, wherein the selective coupling device is an n-channel field effect transistor. 16. The pulse generator of claim 1, wherein the second potential is lower than the first potential, wherein the upper resistive component has a positive effective temperature coefficient of resistivity, and wherein the lower resistive component further comprises: a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter; a resistive element coupled in parallel with the bipolar junction transistor, having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor; and a resistive element coupled in series with the bipolar junction transistor, having an input coupled to the emitter of the bipolar junction transistor and an output coupled to the second potential node through a selective coupling device, wherein the selective coupling device is selectively activated in response to a control signal. 17. The pulse generator of claim 16, wherein the resistive element coupled in parallel with the bipolar junction transistor and the resistive element coupled in series with the bipolar junction transistor each include at least one semiconductor resistor. 18. A pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises: an upper resistive component coupled between a first potential node and an output node of the threshold signal generator, wherein the first potential node is coupled to receive a first potential; and a lower resistive component coupled between a second potential node and the output node of the threshold signal generator, wherein the second potential node is coupled to receive a second potential lower than the first potential; wherein the upper resistive component has a first effective temperature coefficient of resistivity and the lower resistive component has a second effective temperature coefficient of resistivity lower than the first effective temperature coefficient of resistivity; and wherein the first effective temperature coefficient of resistivity and the second effective temperature coefficient of resistivity are both positive effective temperature coefficients of resistivity. 19. The pulse generator of claim 18, wherein the lower resistive component includes at least one resistive element having a negative temperature coefficient of resistivity. 20. The pulse generator of claim 18, wherein the lower resistive component includes a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter. 21. The pulse generator of claim 20, further comprising: at least one resistive element coupled in parallel with the bipolar junction transistor, having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor; and at least one resistive element coupled in series with the bipolar junction transistor, having an input coupled to the emitter of the bipolar junction transistor and an output coupled to the second potential node. 22. A pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises: an upper resistive component coupled between a first potential node and an output node of the threshold signal generator; a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter coupled to a second potential node through at least one resistive element; and at least one resistive element coupled in parallel with the bipolar junction transistor, each having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor. 23. A method of generating an output signal having a pulse duration, the method comprising: generating a threshold signal having a potential level, wherein the threshold signal is generated at the output of a voltage divider having an upper resistive component and a lower resistive component, and wherein the lower resistive component has an effective temperature coefficient of resistivity lower than an effective temperature coefficient of resistivity of the upper resistive component; generating a ramp signal having a potential level; resetting the ramp signal to an initial potential level; and generating the output signal in response to a difference between the potential level of the threshold signal and the potential level of the ramp signal; wherein the output signal has a first logic level at the time of resetting the ramp signal; wherein the output signal transitions to a second logic level after the ramp signal assumes the initial potential level; and wherein the output signal transitions back to the first logic level when the potential level of the threshold signal exceeds the potential level of the ramp signal by less than a predetermined difference. 24. The method of claim 23, wherein the method is performed in the order presented. 25. The method of claim 23, wherein the lower resistive component includes at least one resistive element having a temperature coefficient of resistivity lower than the effective temperature coefficient of resistivity of the upper resistive component. 26. The method of claim 23, wherein the lower resistive component includes at least one resistive element having a negative temperature coefficient of resistivity. 27. The method of claim 26, wherein the at least one resistive element having a negative temperature coefficient of resistivity is a bipolar junction transistor. 28. The method of claim 23, wherein the lower resistive component includes at least one resistive element coupled in parallel with a bipolar junction transistor and at least one resistive element coupled in series with the bipolar junction transistor. 29. The method of claim 23, wherein resetting the ramp signal is delayed from generating the threshold signal. 30. The method of claim 29, wherein resetting the ramp signal is delayed by one clock cycle. 31. The method of claim 29, wherein resetting the ramp signal is delayed by approximately 10 nS. 32. The method of claim 23, wherein resetting the ramp signal further comprises shorting the ramp signal to a ground potential. 33. The method of claim 32, wherein shorting the ramp signal to the ground potential further comprises shorting the ramp signal to the ground potential for one-half of a clock cycle. 34. The method of claim 32, wherein shorting the ramp signal to the ground potential further comprises shorting the ramp signal to the ground potential for approximately 5 nS. 35. The method of claim 23, wherein the predetermined difference is approximately zero. 36. The method of claim 23, wherein the predetermined difference is approximately −50 mV. 37. A flash memory device, comprising: a memory array of floating-gate memory cells; a command control circuit for generating control signals to control operations on the memory array, the command control circuit including a pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises: an upper resistive component coupled between a first potential node and an output node of the threshold signal generator, wherein the first potential node is coupled to receive a first potential; and a lower resistive component coupled between a second potential node and the output node of the threshold signal generator, wherein the second potential node is coupled to receive a second potential; wherein the upper resistive component has a first effective temperature coefficient of resistivity and the lower resistive component has a second effective temperature coefficient of resistivity lower than the first effective temperature coefficient of resistivity. 38. A flash memory device, comprising: a memory array of floating-gate memory cells; a command control circuit for generating control signals to control operations on the memory array, the command control circuit including a pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises: an upper resistive component coupled between a first potential node and an output node of the threshold signal generator, wherein the first potential node is coupled to receive a first potential; and a lower resistive component coupled between a second potential node and the output node of the threshold signal generator, wherein the second potential node is coupled to receive a second potential lower than the first potential; wherein the upper resistive component has a first effective temperature coefficient of resistivity and the lower resistive component has a second effective temperature coefficient of resistivity lower than the first effective temperature coefficient of resistivity; and wherein the first effective temperature coefficient of resistivity and the second effective temperature coefficient of resistivity are both positive effective temperature coefficients of resistivity. 39. A flash memory device, comprising: a memory array of floating-gate memory cells; a command control circuit for generating control signals to control operations on the memory array, the command control circuit including a pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, wherein the threshold signal generator comprises: an upper resistive component coupled between a first potential node and an output node of the threshold signal generator; a bipolar junction transistor having a base coupled to the output node of the threshold signal generator, a collector coupled to the output node of the threshold signal generator, and an emitter coupled to a second potential node through at least one resistive element; and at least one resistive element coupled in parallel with the bipolar junction transistor, each having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor. 40. An electronic system, comprising: a processor; a memory device coupled to the processor, wherein the memory device includes a memory array and a command control circuit for generating control signals to control operations on the memory array, the command control circuit including a pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator, and wherein the threshold signal generator comprises: an upper resistive component coupled between a first potential node and an output node of the threshold signal generator, wherein the first potential node is coupled to receive a first potential; and a lower resistive component coupled between a second potential node and the output node of the threshold signal generator, wherein the second potential node is coupled to receive a second potential; wherein the upper resistive component has a first effective temperature coefficient of resistivity and the lower resistive component has a second effective temperature coefficient of resistivity lower than the first effective temperature coefficient of resistivity.
STATEMENT OF RELATED APPLICATIONS [0001] This application claims priority to Italian Patent Application Serial No. RM2000A000700 filed Dec. 28, 2000, which is commonly assigned. TECHNICAL FIELD OF THE INVENTION [0002] The present invention relates generally to semiconductor integrated circuit devices, and in particular, the present invention relates to pulse generators for developing control signals in a semiconductor memory device. BACKGROUND OF THE INVENTION [0003] Pulse generators are useful in a number of semiconductor integrated circuit devices to control time delays between operations or to control the length of an operation or a phase of that operation. One particular type of semiconductor integrated circuit device is a memory device. [0004] Semiconductor memory devices are rapidly-accessible memory devices. In a semiconductor memory device, the time required for storing and retrieving information generally is independent of the physical location of the information within the memory device. Semiconductor memory devices typically store information in a large array of cells. A group of cells are electrically connected together by a bit line, or data line. An electrical signal is used to program a cell or cells. [0005] Computer, communication and industrial applications are driving the demand for memory devices in a variety of electronic systems. One important form of semiconductor memory device includes a non-volatile memory made up of floating-gate memory cells called flash memory. Computer applications use flash memory to store BIOS firmware. Peripheral devices such as printers store fonts and forms on flash memory. Digital cellular and wireless applications consume large quantities of flash memory and are continually pushing for lower voltages and higher densities. Portable applications such as digital cameras, audio recorders, personal digital assistants (PDAs) and test equipment also use flash memory as a medium to store data. [0006] As operating voltages continue to decrease, operation of the memory device must come under tighter constraints. Lower operating voltages lead to lower operating margins. In turn, lower operating margins require tighter controls in time-dependent operations. [0007] Timing of operations within a memory device is often regulated by a timing pulse or other control signal generated by a pulse generator. Timing pulses having durations that are relatively stable across a wide range of operating conditions are preferred. If a timing pulse shows excessive variation across anticipated operating conditions, the designer must build in delays to avoid entering or leaving a phase of operation too early. These intentional delays degrade the potential performance of the memory device. [0008] One common pulse generator is a ramp comparator. FIG. 1 depicts an example of a pulse generator 100 as a simple ramp comparator. Typical ramp comparators include a comparator 110 whose output is generated in response to a difference between a ramp signal from a ramp signal generator 150 and a threshold signal from a threshold signal generator 170. Such ramp comparators are often used to develop a timing pulse. The duration of the pulse is dependent upon the level of the threshold signal, the initial value of the ramp signal and the slope of the ramp signal. [0009] For integrated circuits, the threshold signal for a ramp comparator is typically a voltage signal such as a supply voltage or some internally-generated voltage. One example of a threshold signal generator 170 is shown in FIG. 1 configured as a voltage divider. The threshold signal generator 170 is fed by a first potential node 172 on a high end and a second potential node 174 on a low end. The first potential node 172 may be coupled to receive a supply potential such as Vcc. The second potential node 174 may be coupled to receive a ground potential such as Vss. The threshold signal generator 170 has an upper resistive component 176 in series with a lower resistive component 178. The upper resistive component 176 is located between the first potential node 172 and an output node 180. The lower resistive component 178 is located between the second potential node 174 and the output node 180. [0010] The threshold signal is provided at the output node 180. The potential level of the threshold signal is between the potential level of the first potential node 172 and the potential level of the second potential node 174 and can be adjusted through selection of the resistance values of the upper resistive component 176 and the lower resistive component 178 as is well known in the art. In general, the output of the threshold signal generator 170, Vo, can be described by the function, Vo=(Rl/(Rl+Ru))*(Vh−Vl)+Vl, where Rl is the resistance of the lower resistive component 178, Ru is the resistance of the upper resistive component 176, Vh is the potential received at the first potential node 172, and Vl is the potential received at the second potential node 174. [0011] The ramp signal is often generated using a ramp signal generator 150 having a resistive-capacitive (RC) circuit. In the example of FIG. 1, the ramp signal generator 150 is depicted as having a resistive component 156 coupled between a first potential node 152 and an output node 160. The ramp signal generator 150 further has a capacitive component 158 coupled between a second potential node 154 and the output node 160. The ramp signal provided at the output node 160 is responsive to an input signal, such as a supply voltage from the first potential node 152. Such RC circuits are highly reliable and are easy to design and fabricate, but they are also generally sensitive to changes in the voltage level of the input signal as well as to changes in ambient temperature. A pulse generator 100 whose ramp signal is sensitive to changes in ambient temperature may exhibit unacceptable variation in timing characteristics within anticipated operating temperatures. [0012] For the reasons stated above, and for other reasons stated below which will become apparent to those skilled in the art upon reading and understanding the present specification, there is a need in the art for alternative pulse generators exhibiting compensation for supply voltage as well as ambient temperature, memory devices containing such pulse generators, and methods of their operation. SUMMARY OF THE INVENTION [0013] The above-mentioned problems with memory devices and other problems are addressed by the present invention and will be understood by reading and studying the following specification. [0014] Ramp comparator pulse generators of the various embodiments have temperature and voltage compensation and are adapted for use in integrated circuit devices such as memory devices. They are particularly adapted for low-voltage memory devices, e.g., those operating at supply voltages of 1.6-2.2V or less, where operating margins are reduced. Such pulse generators include a ramp signal generator, a threshold signal generator, and a comparator providing an output signal in response to a difference between the potential level of the threshold signal and the potential level of the ramp signal. [0015] The pulse generators described herein utilize an adaptive threshold signal generator configured as a voltage divider and having resistive components having differing effective temperature coefficients of resistivity. The adaptive threshold signal generator has an upper resistive component and a lower resistive component coupled in series between a high potential and a low potential. The lower resistive component has an effective temperature coefficient of resistivity that is less than an effective temperature coefficient of resistivity of the upper resistive component. For ramp signal generators making use of typical RC circuits, the various embodiments exhibit similar voltage compensation and improved temperature compensation over pulse generators utilizing voltage dividers having upper and lower resistive components with substantially identical effective temperature coefficients of resistivity. [0016] For one embodiment, the invention provides a pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator. The threshold signal generator includes an upper resistive component coupled between a first potential node and an output node of the threshold signal generator. The threshold signal generator further includes a lower resistive component coupled between a second potential node and the output node of the threshold signal generator. The upper resistive component has a first effective temperature coefficient of resistivity and the lower resistive component has a second effective temperature coefficient of resistivity lower than the first effective temperature coefficient of resistivity. [0017] For another embodiment, the invention provides a pulse generator having a comparator whose output is generated in response to a difference between a potential level of a ramp signal from a ramp signal generator and a potential level of a threshold signal from a threshold signal generator. The threshold signal generator includes an upper resistive component coupled between a first potential node and an output node of the threshold signal generator. The threshold signal generator further includes a lower resistive component coupled between a second potential node and the output node of the threshold signal generator. The upper resistive component has a first effective temperature coefficient of resistivity and the lower resistive component has a second effective temperature coefficient of resistivity lower than the first effective temperature coefficient of resistivity. The lower resistive component includes a bipolar junction transistor having a base coupled to the output of the threshold signal generator, a collector coupled to the output of the threshold signal generator, and an emitter. The lower resistive component further includes a resistive element coupled in parallel with the bipolar junction transistor, having an input coupled to the collector of the bipolar junction transistor and an output coupled to the emitter of the bipolar junction transistor. The lower resistive component still further includes a resistive element coupled in series with the bipolar junction transistor, having an input coupled to the emitter of the bipolar junction transistor and an output coupled to the second potential node through a selective coupling device, wherein the selective coupling device is selectively activated in response to a control signal. [0018] For yet another embodiment, the invention provides a method of generating an output signal having a pulse duration. The method includes generating a threshold signal having a potential level, wherein the threshold signal is generated at the output of a voltage divider having an upper resistive component and a lower resistive component, and wherein the lower resistive component has an effective temperature coefficient of resistivity lower than an effective temperature coefficient of resistivity of the upper resistive component. The method further includes generating a ramp signal having a potential level and resetting the ramp signal to an initial potential level. The method still further includes generating the output signal in response to a difference between the potential level of the threshold signal and the potential level of the ramp signal. The output signal has a first logic level at the time of resetting the ramp signal, the output signal transitions to a second logic level after the ramp signal assumes the initial potential level, and the output signal transitions back to the first logic level when the potential level of the threshold signal exceeds the potential level of the ramp signal by less than a predetermined difference. [0019] For further embodiments, the invention provides memory devices and electronic systems containing pulse generators of the type described herein. The invention further provides methods and apparatus of varying scope.
BRIEF DESCRIPTION OF THE DRAWINGS [0020]FIG. 1 is a schematic of a typical ramp comparator pulse generator. [0021]FIG. 2 is a functional block diagram of a memory device coupled to a processor as part of an electronic system. [0022]FIG. 3A is a schematic of a ramp comparator pulse generator having a threshold signal generator having resistive components of differing effective temperature coefficients of resistivity. [0023]FIG. 3B is a schematic of another ramp comparator pulse generator having a threshold signal generator having resistive components of differing effective temperature coefficients of resistivity. [0024]FIG. 3C is a schematic of yet another ramp comparator pulse generator having a threshold signal generator having resistive components of differing effective temperature coefficients of resistivity. DETAILED DESCRIPTION OF THE INVENTION [0025] In the following detailed description of the present embodiments, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration specific embodiments in which the inventions may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that process, electrical or mechanical changes may be made without departing from the scope of the present invention. The term substrate used in the following description includes any base semiconductor structure. Examples include silicon-on-sapphire (SOS) technology, silicon-on-insulator (SOI) technology, thin film transistor (TFT) technology, doped and undoped semiconductors, epitaxial layers of a silicon supported by a base semiconductor structure, as well as other semiconductor structures well known to one skilled in the art. Furthermore, when reference is made to a substrate in the following description, previous process steps may have been utilized to form regions/junctions in the base semiconductor structure, and the term substrate includes the underlying layers containing such regions/junctions. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims and equivalents thereof. [0026] Pulse generators in accordance with the various embodiments are adaptable for a variety of integrated circuit devices. One such integrated circuit device is a memory device, such as a flash memory device. FIG. 2 is a functional block diagram of a basic flash memory device 201 that is coupled to a processor 203. The memory device 201 and the processor 203 may form part of a larger electronic system 200. The memory device 201 has been simplified to focus on features of the memory that are helpful in understanding the present invention. The memory device 201 includes an array of memory cells 205. The memory cells are preferably non-volatile floating-gate memory cells and generally have their gates coupled to word lines, drain regions coupled to local bit lines, and source regions commonly coupled to a ground potential. The memory array 205 is arranged in rows and columns, with the rows arranged in blocks. The memory cells generally can be erased in blocks. Data, however, may be stored in the memory array 205 separate from the block structure. [0027] A row decoder 209 and a column decoder 211 are provided to decode address signals provided on address lines A0-Ax 213. An address buffer circuit 215 is provided to latch the address signals. Address signals are received and decoded to access the memory array 205. A column select circuit 219 is provided to select a column of the memory array 205 in response to control signals from the column decoder 211. Sensing circuitry 221 is used to sense and amplify data stored in the memory cells. Data input 223 and output 225 buffer circuits are included for bi-directional data communication over a plurality of data (DQ) lines 227 with the processor 203. A data latch 229 is typically provided between data input buffer circuit 223 and the DQ lines 227 for storing data values (to be written to a memory cell) received from the DQ lines 227. Data amplified by the sensing circuitry 221 is provided to the data output buffer circuit 225 for output on the DQ lines 227. [0028] Command control circuit 231 decodes signals provided on control lines 235 from the processor 203. These signals are used to control the operations on the memory array 205, including data read, data write, and erase operations. The command control circuit 231 includes a pulse generator in accordance with the various embodiments described herein. Input/output control circuit 233 is used to control the data input buffer circuit 223 and the data output buffer circuit 225 in response to some of the control signals. As stated above, the flash memory device 201 has been simplified to facilitate a basic understanding of the features of the memory. A more detailed understanding of flash memories is known to those skilled in the art. [0029] As noted above, pulse generators of the type depicted in FIG. 1 may have unacceptable variation due to changes in ambient temperature. Such variation is generally the result of resistance changes in the resistive component of the ramp generator. Resistance is partly a function of temperature such that the resistance of a resistive component at a first temperature is different compared to the resistance of the resistive component at a second temperature. The function can be described generally as R2=R1*(1+α*(T2−T1)), where T2 is the first temperature, T2 is the second temperature, R1 is the resistance at T1, R2 is the resistance at T2 and α is the temperature coefficient of resistivity of the resistive component. While resistance changes would also occur in the voltage divider of the threshold generator, voltage dividers are generally immune from temperature variation as their output is determined by the ratio of the resistance of the upper resistive component to the lower resistive component; as long as both resistive components have the same temperature coefficient of resistivity, the ratio will remain substantially constant across normal temperature ranges. [0030] Integrated circuit resistive components are generally fabricated using semiconductor resistors as their resistive elements. Semiconductor resistors use the bulk resistivity of doped semiconductor regions to obtain a desired resistance value. Semiconductor resistors fall generally into four classes: diffused, bulk, pinched and implanted. Semiconductor resistors of the diffused class rely on the resistivity of a diffused region in a semiconductor substrate to provide the resistance value. Semiconductor resistors of the bulk class rely on the bulk resistivity of a semiconductor material to provide the resistance value. Semiconductor resistors of the pinched class utilize a doped semiconductor region whose effective cross-sectional area has been �pinched� between doped areas of an opposite conductivity type to provide the resistance value. Semiconductor resistors of the implanted class rely on the resistivity of a shallow implanted region in a semiconductor substrate to provide the resistance value. For each class of semiconductor resistor, its typical temperature coefficient of resistivity, α, is some positive value for typical operating temperatures. Accordingly, increases in ambient temperature generally lead to increased resistance levels. [0031] Increasing resistance levels in the RC circuit of the ramp generator will lead to a decreasing slope of the ramp signal. If the threshold signal remains substantially constant, a decreasing slope of the ramp signal will lead to a larger pulse width from the comparator as it will take longer for the ramp signal to equal or exceed the threshold signal. To compensate for this undesirable temperature variation in the ramp signal generator, embodiments of pulse generators described herein utilize a threshold signal generator that is adaptive to changes in ambient temperature. [0032]FIG. 3A is a schematic of one embodiment of a pulse generator 300 having a comparator 310, a ramp signal generator 350 and an adaptive threshold signal generator 370. The comparator 310 is coupled to receive a ramp signal from the ramp signal generator 350 and a threshold signal from the adaptive threshold signal generator 370. A control signal is generated by the comparator 310 in response to the ramp signal and the threshold signal for output on node 312 as the output signal of the pulse generator 300. [0033] The adaptive threshold signal generator 370 of FIG. 3A includes an upper resistive component 376 coupled between a first potential node 372 and an output node 380. The adaptive threshold signal generator 370 of FIG. 3A further includes a lower resistive component 378 coupled between a second potential node 374 and the output node 380. The first potential node 372 is coupled to receive a first potential and the second potential node 374 is coupled to receive a second potential, with the first potential higher than the second potential. For one embodiment, the first potential node 372 is coupled to receive a supply potential, such as Vcc, and the second potential node 374 is coupled to receive a ground potential, such as Vss. [0034] To compensate for the effects of a positive effective temperature coefficient of resistivity of a resistive component of the ramp signal generator 350, the adaptive threshold signal generator 370 has a lower resistive component 378 having an effective temperature coefficient of resistivity that is lower than an effective temperature coefficient of resistivity of the upper resistive component 376. In this manner, increasing temperatures will raise the resistance of the upper resistive component 376 faster than the resistance of the lower resistive component 378. As the ratio of the resistance of the upper resistive component 376 to the resistance of the lower resistive component 378 increases, the resulting threshold signal will decrease for a given first and second potentials. A decreasing threshold signal will tend to compensate for a decreasing ramp signal slope. Using such compensation, a length of time needed for the ramp signal to exceed the threshold signal at a first temperature can be made to approach a length of time needed for the ramp signal to exceed the threshold signal at a second temperature, thus facilitating a more consistent pulse duration of the control signal across a range of operating temperatures. [0035] It is noted that were the ramp signal generator 350 to have a negative effective temperature coefficient of resistivity, increasing temperatures would result in an increasing ramp signal slope. The threshold generator 370 could similarly compensate for the effects of this negative effective temperature coefficient of resistivity by reversing the roles of the first potential node 372 and the second potential node 374 such that the first potential is lower than the second potential. Again, increasing temperatures will raise the resistance of the upper resistive component 376 faster than the resistance of the lower resistive component 378. However, with the second potential higher than the first potential, the increasing ratio of the resistance of the upper resistive component 376 to the resistance of the lower resistive component 378 results in an increasing threshold signal for a given first and second potentials. An increasing threshold signal will tend to compensate for an increasing ramp signal slope. [0036]FIG. 3B is a schematic of another embodiment of a pulse generator 300 having a comparator 310, a ramp signal generator 350 and an adaptive threshold signal generator 370. FIG. 3B demonstrates one approach to generating an upper resistive component 376 having an effective temperature coefficient of resistivity higher than the lower resistive component 378. [0037] The adaptive threshold signal generator 370 of FIG. 3B includes an upper resistive component 376 coupled between a first potential node 372 and an output node 380. The upper resistive component 376 of FIG. 3B includes a resistive element 382. As is well known in the art, resistive elements or resistors may be configured in a variety of parallel configurations, series configuration, or combination parallel/series configurations to produce equivalent resistive elements. Accordingly, for additional embodiments, the resistive element 382 may represent two or more resistive elements in a variety of parallel, series, or parallel/series configurations. For one embodiment, the resistive element 382 contains one or more semiconductor resistors and the upper resistive component 376 has a positive temperature coefficient of resistivity. [0038] The upper resistive component 376 has an effective temperature coefficient of resistivity that is the composite of the temperature coefficients of resistivity of all of its resistive elements. For the embodiment depicted in FIG. 3B, the effective temperature coefficient of resistivity of the upper resistive component 376 equals the temperature coefficient of resistivity of the resistive element 382. [0039] The adaptive threshold signal generator 370 of FIG. 3B further includes a lower resistive component 378 coupled between a second potential node 374 and the output node 380. The first potential node 372 is coupled to receive a first potential and the second potential node 374 is coupled to receive a second potential, with the first potential higher than the second potential. For one embodiment, the first potential node 372 is coupled to receive a supply potential, such as Vcc, and the second potential node 374 is coupled to receive a ground potential, such as Vss. [0040] The lower resistive component 378 has an effective temperature coefficient of resistivity that is lower than the effective temperature coefficient of resistivity of the upper resistive component 376. To accomplish this, the lower resistive component 378 includes at least one resistive element having a temperature coefficient of resistivity lower than the effective temperature coefficient of resistivity of the upper resistive component 376. For one embodiment, the lower resistive component 378 includes at least one resistive element having a temperature coefficient of resistivity lower than the lowest temperature coefficient of resistivity of any resistive element of the upper resistive component 376. For another embodiment, the lower resistive component 378 includes at least one resistive element having a negative temperature coefficient of resistivity. [0041] For the embodiment depicted in FIG. 3B, the lower resistive component 378 includes, as a resistive element, a bipolar junction transistor (BJT) 386 having its base coupled to its collector. The BJT 386 has a negative temperature coefficient of resistivity. As an example, the base-emitter bias, Vbe, of an npn BJT may change by −0.2 mV/� C. in this configuration. Additional resistive elements, such as resistive elements 384 and 388 can be used to adjust the nominal resistance level of the lower resistive component 378 to produce a desired resistance ratio between the upper resistive component 376 and the lower resistive component 378, and thus to produce a desired threshold signal for a given set of first and second potentials. For the embodiment depicted in FIG. 3B, resistive element 384 is coupled in parallel with BJT 386 while resistive element 388 is coupled in series with BJT 386. For one embodiment, the resistive elements 384 and 388 each contain semiconductor resistors, each having a positive temperature coefficient of resistivity. As with the resistive element 382, resistive elements 384 and 388 may each represent one or more resistive elements in a variety of parallel configurations, series configurations, or combination parallel/series configurations. [0042]FIG. 3C is a schematic of yet another embodiment of a pulse generator 300 having a comparator 310, a ramp signal generator 350 and an adaptive threshold signal generator 370. FIG. 3C provides detail of one embodiment of a comparator 310 and ramp signal generator 350 and will be used to describe the generation of a control signal having a pulse duration. The adaptive threshold signal generator 370 of FIG. 3C is generally similar to that shown in FIG. 3B with the addition of an n-channel field-effect transistor (nFET) 390 coupled between the lower resistive component 378 and the second potential node 374. As shown in FIG. 3C, the nFET 390 has a first source/drain region coupled to the lower resistive component 378, a second source/drain region coupled to the second potential node 374, and a gate coupled to receive a control signal on node 392. The control signal supplied to node 392 will be referred to as enable signal EN. The nFET 390 is normally deactivated or open, thereby disabling generation of the threshold signal and maintaining the potential level at the output node 380 substantially at the level of the first potential node 372. When activated or closed, the nFET 390 enables the threshold signal generator 370 to generate the threshold signal at a level between the first potential and the second potential. [0043] The ramp signal generator 350 of FIG. 3C includes a resistive element 356 coupled between a first potential node 352 and an output node 360. The ramp signal generator 350 further includes an nFET 362 having a first source/drain region coupled to the output node 360, a second source/drain region coupled to a second potential node 366, and a gate coupled to receive a control signal on node 364. The ramp signal generator 350 still further includes a capacitive element 358 coupled between the output node 360 and a third potential node 354. The first potential node 352 is coupled to receive a first potential, the second potential node 366 is coupled to receive a second potential lower than the first potential, and the third potential node 354 is coupled to receive a third potential lower than the first potential. For one embodiment, the first potential node 352 of the ramp signal generator 350 is coupled to receive the same potential as the first potential node 372 of the adaptive threshold signal generator 370, e.g., the supply potential Vcc. For a further embodiment, the second potential node 366 and the third potential node 354 of the ramp signal generator 350 are each coupled to receive the same potential. For a still further embodiment, the second potential node 366 and the third potential node 354 of the ramp signal generator 350 are each coupled to receive the same potential as the second potential node 374 of the adaptive threshold signal generator 370, e.g., the ground potential Vss. [0044] The control signal supplied to node 364 will be referred to as ramp enable signal IN1. The nFET 362 is normally deactivated or open, thereby enabling the ramp signal generator 350 to charge the capacitive element 358 and generate the ramp signal. [0045] The comparator 310 of FIG. 3C includes a first nFET 314 having its gate coupled to receive the ramp signal and a second nFET 316 having its gate coupled to receive the threshold signal. The comparator 310 further includes bypass p-channel field-effect transistor (pFET) 330. Bypass pFET 330 has a first source/drain region coupled to receive a supply potential from potential node 318, a second source/drain region coupled to the output 312 of the comparator 310, and a gate coupled to receive the enable signal EN on node 332. The nFET 340 has a first source/drain region coupled to receive a ground potential from the potential node 320, a second source/drain region, and a gate coupled to receive an enable signal EN_on node 344 through an inverter 342. The enable signal EN_is a binary complement of the enable signal EN such that the gate of the nFET 340 effectively receives the enable signal EN. [0046] The comparator 310 further includes an nFET 334 having a first source/drain region, a gate coupled to its first source/drain region, and a second source/drain region coupled to the first source/drain region of nFET 340. The resistor 322 is coupled between the potential node 318 and the first source/drain region of nFET 334. The nFET 336 includes a gate coupled to the gate of the nFET 344, a first source/drain region coupled to second source/drain regions of nFETs 314 and 316, and a second source/drain region coupled to the first source/drain region of nFET 340. The nFET 338 includes a gate coupled to the gate of the nFET 344, a first source/drain region coupled to the output 312, and a second source/drain region coupled to the first source/drain region of the nFET 340. The pFET 328 includes a gate coupled to a first source/drain region of the nFET 314, a first source/drain region coupled to the potential node 318, and a second source/drain region coupled to the output 312. The pFET 324 includes a gate coupled to a first source/drain region of the nFET 316, a first source/drain region coupled to the potential node 318, and a second source/drain region coupled to the first source/drain region of the nFET 316. The pFET 326 includes a gate coupled to the gate of the pFET 324, a first source/drain region coupled to the potential node 318, and a second source/drain region coupled to the first source/drain region of the nFET 314. [0047] During a first phase of operation of the pulse generator 300, the enable signal EN has a first logic level, such as logic low, thereby concurrently deactivating the nFET 390 of the threshold signal generator 370, activating the pFET 330 of the comparator 310, and deactivating the nFET 340 of the comparator 310. In this manner, the control signal on the output 312 of the comparator 310 has a first logic level during the first phase of operation. The first logic level of the comparator 310 is represented by a potential level substantially at the value of the supply potential provided at node 318. During the first phase of operation of the pulse generator 300, the ramp enable signal IN 1 may have a logic low level, thereby deactivating the nFET 362 and charging the capacitive element 358, thus bringing the ramp signal to a potential level of the potential node 352. [0048] During a second phase of operation of the pulse generator 300, the enable signal EN is transitioned to a second logic level, such as logic high. The ramp enable signal IN1 may remain at its logic low level. In response to the transition of the enable signal EN to the logic high level, nFET 390 is activated, nFET 340 is activated, and pFET 330 is deactivated, thereby enabling the comparator 310 to generate an output signal in response to a difference between the potential level of the threshold signal and the potential level of the ramp signal. For the embodiment depicted in FIG. 3C, the ramp signal will have the potential level of the potential node 352 at the initiation of this second phase of operation as the capacitive element 358 will be fully charged during the first phase of operation. The threshold signal will fall from a potential level of the potential node 372 to a potential level between a first potential received at the potential node 372 and a second potential received at the potential node 374. As such, the potential level of the threshold signal will be less than the potential level of the ramp signal at the initiation of the second phase of operation and the logic level of the output signal of the pulse generator 300 will remain at its first, high, logic level. [0049] At the beginning of a third phase of operation of the pulse generator 300, the ramp enable signal IN 1 is briefly pulsed to a second or high logic level to reset the ramp signal. The output signal of the pulse generator 300 has the first logic level at the time of resetting the ramp signal. In response to the pulse of the ramp enable signal IN I to a logic high level, the capacitive element 358 is shorted to a ground potential and consequently discharged. This effectively shorts the ramp signal to the ground potential. For consistent operation, the pulse is of some duration sufficient to completely discharge the capacitive element 358 and bring the ramp signal down to the ground potential, yet brief enough to be a minor fraction of the desired pulse duration of the output signal of the pulse generator 300. For one embodiment, the pulse is equal to one-half of a clock cycle. For a further embodiment, the pulse is approximately 5 nS. [0050] After the ramp signal is brought to the ground potential as an initial potential level, the potential level of the threshold signal will exceed the potential level of the ramp signal and the output signal of the pulse generator 300 will transition to a second or logic low level. As the capacitive element 358 charges, the potential level of the ramp signal will rise from its initial value. The output signal of the pulse generator 300 will maintain its logic low level until the potential level of the threshold signal exceeds the potential level of the ramp signal by less than some predetermined difference. This predetermined difference is determined by the configuration and fabrication of the comparator 310 and represents the potential differential between the threshold signal applied to the gate of the nFET 316 and the ramp signal applied to the gate of the nFET 314 necessary to cause the output signal on output 312 to transition back to the logic high level. The predetermined difference need not be constant over a variety of operating conditions, but should be substantially constant or repeatable for a given set of operating conditions. For one embodiment, the predetermined difference is approximately zero such that the output signal of the pulse generator 300 will transition to the logic high level when the potential level of the ramp signal crosses the potential level of the threshold signal. For another embodiment, the predetermined difference is approximately −50 mV such that the output signal of the pulse generator 300 will transition to the logic high level when the potential level of the ramp signal exceeds the potential level of the threshold signal by approximately 50 mV. [0051] During the third phase of operation, the ramp signal will ramp toward the potential level of the potential node 352, i.e., the supply potential. When the ramp signal reaches a potential level such that the potential level of the threshold signal exceeds the potential level of the ramp signal by less than the predetermined difference, the output signal of the pulse generator 300 will transition back to the logic high level. The output signal of the pulse generator 300 generated in accordance with the foregoing description will have a pulse duration measured as the time between the transition to the logic low level and the transition back to the logic high level during the third phase of operation. [0052] The third phase of operation, and thus the generation of the ramp enable signal pulse, may substantially coincide with the second phase of operation or it may be delayed from the beginning of the second phase of operation to allow the threshold signal to stabilize. As control signals transition, spikes may be induced on the resulting output signals. These spikes may lead to a false indication that the difference between the potential level of the threshold signal and the potential level of the ramp signal is greater than the predetermined difference, thus resulting in a transition of the output signal of the pulse generator 300 to the logic low level. Delaying the generation of the ramp enable signal pulse reduces the risk of creating an erroneous output signal of the pulse generator 300. For one embodiment, the third phase of operation is delayed by one clock cycle. For a further embodiment, the third phase of operation is delayed by approximately 10 nS. [0053] Subsequent to the transition of the output signal of the pulse generator 300 back to the logic high level during the third phase of operation, the pulse generator 300 may be returned to the first phase of operation in preparation for the next pulse. The duration of the pulse of the output signal of the pulse generator 300 exhibits compensation for changes in supply potential and changes in ambient temperature. Changes in supply potential are compensated for using an adaptive threshold signal generator 370 configured as a voltage divider having an upper resistive component 376 and a lower resistive component 378 coupled in series between a supply potential and a ground potential. Changes in ambient temperature are compensated for by using resistive components in the adaptive threshold signal generator 370 having different effective temperature coefficients of resistivity. In compensating for a positive effective temperature coefficient of resistivity of the ramp signal generator 350, the lower resistive component 378 has an effective temperature coefficient of resistivity that is less than the effective temperature coefficient of resistivity of the upper resistive component 376. CONCLUSION [0054] Ramp comparator pulse generators have been described for the generation of a pulse having temperature and voltage compensation. Such pulse generators include a ramp signal generator, a threshold signal generator, and a comparator providing an output signal in response to a difference between the potential level of the threshold signal and the potential level of the ramp signal. The pulse generators described herein utilize an adaptive threshold signal generator configured as a voltage divider and having resistive components having differing effective temperature coefficients of resistivity. The adaptive threshold signal generator has an upper resistive component and a lower resistive component coupled in series between a high potential and a low potential. The lower resistive component has an effective temperature coefficient of resistivity that is less than an effective temperature coefficient of resistivity of the upper resistive component. For ramp signal generators making use of typical RC circuits, the various embodiments exhibit similar voltage compensation and improved temperature compensation over pulse generators utilizing voltage dividers having upper and lower resistive components with substantially identical effective temperature coefficients of resistivity. [0055] Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement that is calculated to achieve the same purpose may be substituted for the specific embodiments shown. Many adaptations of the invention will be apparent to those of ordinary skill in the art. Accordingly, this application is intended to cover any adaptations or variations of the invention. It is manifestly intended that this invention be limited only by the following claims and equivalents thereof. Classifications U.S. Classification365/189.09, 365/226International ClassificationG11C16/32, H03K4/50, H03K3/0231, H03K3/011, G11C7/22Cooperative ClassificationG11C7/04, H03K3/011, G11C7/22, G11C7/222, H03K3/0231, H03K4/50, G11C16/32European ClassificationG11C7/22A, G11C7/04, H03K3/0231, G11C7/22, H03K3/011, H03K4/50Legal EventsDateCodeEventDescriptionApr 7, 2011FPAYFee paymentYear of fee payment: 8Apr 6, 2007FPAYFee paymentYear of fee payment: 4May 4, 2004CCCertificate of correctionOct 17, 2002ASAssignmentOwner name: MICRON TECHNOLOGY, INC., IDAHOFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MAROTTA, GIULIO G.;VALI, TOMMASO;REEL/FRAME:013399/0575Effective date: 20020620RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services


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Patent US6086095 - Airbag cushion exhibiting low seam and fabric usage and simultaneously high ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsThe present invention relates to an airbag cushion which simultaneously exhibits a low amount of seam usage (in order to attach at least two fabric panels or portions of a single panel together) as well as a very low amount of fabric utilized to produce the target airbag cushion, both in correlation...http://www.google.com/patents/US6086095?utm_source=gb-gplus-sharePatent US6086095 - Airbag cushion exhibiting low seam and fabric usage and simultaneously high available inflation volumeAdvanced Patent SearchPublication numberUS6086095 APublication typeGrantApplication numberUS 09/365,374Publication dateJul 11, 2000Filing dateJul 30, 1999Priority dateJul 30, 1999Fee statusPaidAlso published asCA2313959A1, EP1072480A2, EP1072480A3, USRE39002, WO2001008932A1Publication number09365374, 365374, US 6086095 A, US 6086095A, US-A-6086095, US6086095 A, US6086095AInventorsRamesh KeshavarajOriginal AssigneeMilliken & CompanyExport CitationBiBTeX, EndNote, RefManPatent Citations (37), Referenced by (30), Classifications (8), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetAirbag cushion exhibiting low seam and fabric usage and simultaneously high available inflation volume
US 6086095 AAbstract
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inflation volumeUS7409970 *Jun 23, 2006Aug 12, 2008Milliken & CompanyInflatable fabrics comprising basket-woven attachment points between fabric panelsUS7543609Aug 8, 2008Jun 9, 2009Milliken & CompanyInflatable fabrics comprising basket-woven attachment points between fabric panelsUS20020027352 *Jul 5, 2001Mar 7, 2002Ramesh KeshavarajPassenger airbag and methodUS20040169360 *Feb 28, 2003Sep 2, 2004Chavez Spencer WilliamSingle panel airbagUS20040174003 *Mar 4, 2003Sep 9, 2004Dominissini David L.One piece cushion for personal airbagUS20050073135 *Oct 1, 2003Apr 7, 2005Choi ChangsooOverhead airbag having an external side cushion panelUS20050116451 *Nov 18, 2004Jun 2, 2005Toyoda Gosei Co., Ltd.Head-protecting airbagUS20050161928 *Dec 21, 2004Jul 28, 2005Takata CorporationCurtain airbag and methodUS20060249933 *Jun 23, 2006Nov 9, 2006Sollars John A JrInflatable fabrics comprising basket-woven attachment points between fabric panelsUS20090314378 *Apr 12, 2007Dec 24, 2009Itg Automotive Safety Textiles GmbhAirbag FabricUSRE39002 *May 16, 2003Mar 7, 2006Milliken & CompanyAirbag cushion exhibiting low seam and fabric usage and simultaneously high available inflation volumeEP1951559A1 *Nov 23, 2005Aug 6, 2008Autoliv Development ABAn air-bagWO2002016175A2 *Aug 17, 2001Feb 28, 2002Milliken & CoThree-dimensional passenger airbag and methodWO2003008234A2 *Jun 20, 2002Jan 30, 2003Milliken & CoAir bag tether construction* Cited by examinerClassifications U.S. Classification280/743.1, 280/728.1International ClassificationB60R21/16, D03D1/02, B60R21/23, B60R21/235Cooperative ClassificationB60R21/231European ClassificationB60R21/231Legal EventsDateCodeEventDescriptionSep 14, 1999ASAssignmentOwner name: MILLIKEN & COMPANY, SOUTH CAROLINAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:KESHAVARAJ, RAMESH;REEL/FRAME:010232/0972Effective date: 19990910Apr 17, 2001CCCertificate of correctionJul 29, 2003RFReissue application filedEffective date: 20030516Aug 26, 2003FPAYFee paymentYear of fee payment: 4RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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BBB Business Profile | North Valley Pool and Spa
Home > Arizona > Phoenix > Pool Maintenance > North Valley Pool and Spa
North Valley Pool and Spa
(602) 573-8482
Phoenix, AZ 85050-6357
northvalleypoolandspa@yahoo.com
Business Incorporated: 04/21/2016 in AZ
Principal: Mr. Clay Angeli, Managing Member
Principal: Ms. Chris Angeli, Member
North Valley Pool and Spa, LLC
This business provides swimming pool and spa maintenance, and filter service.
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Quotations in the News | Fox News
"He's going to win parts of Ohio, where people are really hurting. There will be sections he will win because people are angry, frustrated and haven't heard any answers. But I still think it's difficult if you are dividing, to be able to win in Ohio. I think it's really, really difficult." — Ohio Gov. John Kasich on CNN's "State of the Union" about Donald Trump's chances of winning the key battleground state.
"A lot of times you hear this rap about how politics doesn't affect their life. But that changes when it's personal, and there's nothing more personal than Donald Trump talking about deporting 11 million immigrants." — Yvanna Cancela, political director of Las Vegas' largely immigrant Culinary Union, on whether the Republican presidential candidate's views on immigration will increase turnout from the 27.3 million Hispanics eligible to vote.
"When I was on the block, I honestly thought my heart was going to explode out of my chest. I was so hyped tonight and so excited." — Michael Phelps, who extended his Olympics record with a 19th gold medal as the United States captured the 4x100-meter freestyle relay.

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Top Product Reviews for Baxton Studio Graymoor Brown Modern Bar Stool (Set of 2) - Overstock.com
Read All Reviews for Baxton Studio Graymoor Brown Modern Bar Stool (Set of 2)
Club O members earn Club O Rewards for writing reviews. Learn More Good look
Read More decodiva54
Great product quality, very sturdy, Rich in color. I get so many compliments from friends & family. I'm very satisfied with these chairs. They fit well under my tall Billard table. Read More Vernize S.
excellent product and not easy to assemble Read More OstkUser38690
The Bar Stools are very nice for the price. First box was damaged, but Over Stock is sending me a new set. These stools are perfect for a Casual Bar, but just fancy enough to pick-up a room.
I just received these stools yesterday and I've already set it up. It took approx 45 mins to assemble both stools (without the help of a man). I plan on ordering two more next week for my bar height table that needs the stools replaced.
wonderful compliment to our kitchen
We love these new stools and they go great in our kitchen. They are very comfortable and add a very rich component to the home. Our whole family uses them on a daily basis for where we eat, do homework, sit and chat...I am so happy we bought them.
I spent a lot of time putting these together by myself. Not that difficult but just took some time. Not sure how stable they are. More fore looks than use..... ?
I would not recommend this product. It was easy enough to put together, but the quality is poor. I will never buy furniture from o.co again. AWFUL!!!! I would give it zero stars if it was possible.
Read More maxine334
I ordered these chairs for use at my kitchen countertop area and they are great for the money. Good quality and VERY comfortable to sit in. Each took about 20 minutes for me to assemble and I'm far from handy. One of the chairs has a few dings on one of the legs but once assembled it wasn't too noticeable. The bag of bolts and screws that came with these broke open during shipments so the box was full of little screws and washers everywhere - not a big deal but just a mess. Recommend these for the great price!!
Read More lisamatx
My mom wanted to buy 2 sets of bar stools for the kitchen. I suggested to put these bar stools in the garden with a high round bar table I saw earlier on overstock. She wanted to buy 2 sets anyway so we tried out both the ideas. What can I say. My idea won. I told her: Mom, you need to keep up with fashion  . Anyway, it was quality and affordable.
Beauty and simplicity are combined in these stools. They have a really solid construction but the touch of the seating is really soft and with the tall backrest the stools are really comfortable. The small additions to the design give the unique and fresh look, not too sophisticated and overwhelming. The price was really affordable and shipping fast.
Read More doramais
I really adore my new bar stools. I ordered two sets for our large bar corner, so we can have enough seating when guests arrive. the stools have a really solid construction and they are not only elegant and beautiful but they are comfortable. The dark brown material gives that well known classic look and matches perfectly with the room. Love the price and top quality.
Read More nicolefades
Read More QUSTON S.
Read More Corvette Y.
Baxton Studio Graymoor Brown Modern Bar Stool (Set of 2) Today:

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Amazon.com: Deering Goodtime 2 19-Fret Tenor Banjo: Musical Instruments
Gold Tone CC-Tenor Cripple Creek Tenor Banjo...
This item Deering Goodtime 2 19-Fret Tenor Banjo
3 out of 5 stars (4) 4 out of 5 stars (13) 3 out of 5 stars (12) 4 out of 5 stars (3) 3 out of 5 stars (2) 4 out of 5 stars (746)
$679.00$679.00 $164.97$164.97 $489.00$489.00 $509.25$509.25 $436.97$436.97 $154.95$154.95
35 x 13.88 x 4.25 in 43 x 20 x 8 in 32 x 11.75 x 3.75 in 34.5 x 13 x 4 in 34 x 4.25 x 13.25 in 45.6 x 17.9 x 6 in
The American made Goodtime 2 19-fret tenor banjo has several features found in competitive banjos costing five times the price. The "better than the price tone" from this banjo comes from: the three-ply maple rim, maple resonator and the maple neck. All of the most popular and reknown banjos in the world are made with a rim that is three plys of maple. The four string maple neck gives the banjo the bright, clear, tone and string to string note separation that is so much in demand by teachers to help students learn to develop their playing technique, without fighting their instrument, which is common with lesser banjos. Whether you want a 19 fret tenor for Dixieland Jazz or folk music or Irish music or to take camping or fishing, the Goodtime 2 19 fret tenor will keep you company with world class tone, in a simple and economical banjo.
35 x 13.9 x 4.2 inches
B002AKKJIQ
Goodtime 2 19 Fret Tenor
#149,926 in Musical Instruments (See Top 100 in Musical Instruments)
#168 in Musical Instruments > Ukuleles, Mandolins & Banjos > Banjos
5.0 out of 5 starsDeering Goodtime Banjo
superiour banjo! Got this as a gift from me mum and she said she saw it on guitar centre and thought i would like it. she wanted more info so she typed in amazon and it was there, getting good reviews and a decent price. plays like a charm! good picking to ya'll!
5.0 out of 5 starsLove the tone and looks for the price!
A lovely tone and look for a really competitive price, and the best part its with a resonator back, so a loud ringing tone for playing live sets too. All in all a great deal and not to be missed! Make sure you get a hard case along with this, very essential for travel etc.
I am not a banjo player, nor do I play any instrument. But my kids play various instruments, and I love Mumford and Sons and I'm Irish. So by law, I think I need to own a 19-fret Tenor banjo, the kind used in Irish music.
I'll admit I ordered this from Amazon as their return policies are usually very awesome, and I was worried I'd have buyer's remorse.
Deering makes gorgeous banjos! Even the box it came in was so cool!
I could have spent less on a foreign-made banjo, but I really liked the idea of getting a true USA-made product, and now that I have it, no way is it being returned. Even if I never learn much on it, this is a quality product that will last for years and my kids now have access to a different instrument.
I'm older, wanted a new hobby that would be fun and musical and I wanted something that could involve the kids - whether they're playing along with me or helping me understand string instruments.
It also helped that Amazon's pricing was great and at the time of my purchase, there was a bonus discount on instruments!
The banjo does not come with any instructions or learning aids. Mine was pretty well tuned. I have ordered a beginners DVD and maybe at some point I'll invest in lessons. There's also seems to be quite a bit online on how to tune and play the banjo.
I will be a-pickin' and a-grinnin' in no time!
1.0 out of 5 starsTenor banjo
Excellent so far but the strings are further away from the fingerboard as you get higher up. Can these be adjusted by a luthiery so they are closer??
Pages with related products. See and discover other items: irish instruments, banjo resonator, banjos with resonator, banjo instrument

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david clark 13 4 | eBay
Skip to main contenteBayShop by categoryEnter your search keywordAll CategoriesAntiquesArtBabyBooks, Comics & MagazinesBusiness, Office & IndustrialCameras & PhotographyCars, Motorcycles & VehiclesClothes, Shoes & AccessoriesCoinsCollectablesComputers/Tablets & NetworkingCraftsDolls & BearsDVDs, Films & TVEvents TicketsGarden & PatioHealth & BeautyHolidays & TravelHome, Furniture & DIYJewellery & WatchesMobile Phones & CommunicationMusicMusical InstrumentsPet SuppliesPottery, Porcelain & GlassPropertySound & VisionSporting GoodsSports MemorabiliaStampsToys & GamesVehicle Parts & AccessoriesVideo Games & ConsolesWholesale & Job LotsEverything ElseAdvanced or register':' style="margin-right:3px">Hello -User-.'.replace(/-User-/,escape(a)))+"")}catch(b){document.write("")}})();Hello (Sign in to bid or buy) Daily Deals Sell Help & Contact My eBayExpand My eBay Summary Bids/Offers Watch List Wish List All Lists Purchase History Selling My Collections Followed Searches MessagesCollect & Spend Learn moreNotification Related: david clark h10-13x
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+ £25.00 postage	David Clark Aviation Headset H10 13.4 & Official Carrybag
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January Jones channels Mad Men retro fashion in polka dot coat dress, but looks MUCH more risqué than Betty Francis | Daily Mail Online
Vintage vixen! January Jones channels Mad Men retro fashion in polka dot coat dress, but looks MUCH more risqué than Betty Francis By
01:16 EDT, 5 April 2014
13:04 EDT, 5 April 2014
She stars as the 1960s bombshell ex-wife of Don Draper in the critically acclaimed series Mad Men.And January Jones looked to be channelling a slightly more risqué version of her character Betty on Friday as she fronted up to the Lucky FABB: Fashion and Beauty Blog Conference at Beverly Hills' SLS Hotel.The 36-year-old actress cut a retro figure in her polka dot coat dress as she posed on the carpet amongst a flurry of fashion and beauty favourites. Channeling Betty Draper? January Jones was stunning in a retro inspired coat dress as she attended the Lucky FABB Fashion and Beauty Blog Conference on Friday at the SLS Hotel in Beverly Hills
The elegant long sleeved coat-type garment was decorated with blue polka dots and fell all the way to her knees, but the conservative nature of it was curbed by an unzipped slit all the way up the middle.A
pair of shorts in matching fabric kept the outfit chic along with simple white heels.January
wore a unique pair of royal blue earrings to match her outfit, and a splash of bright red lipstick to add to the spring feel of her eye-catching getup. A happy actress! The 36-year-old star beamed during the night out without her much adored son Xander
Blue baby: January wore blue earrings to match her blue polka dot dress at the fashion forward outing
With her bright blonde tresses pulled back into a classy yet casual bun, the mother-of-one looked well and truly ready for a night out with fellow fashionistas.Nicole Ritchie was one of her fellow guests at the fancy event, and she cut no corners in the style stakes either.The 32-year-old reality star turned fashion designer showed up to represent her own label, House Of Harlow 1960. Flashing leg: The star perched herself on a white chair and chatted with Cassandra Grey on the topic of beauty and fashion at the event
Elegance: Nicole Ritchie looked stunning as usual in a classy blazer teamed with leather trousers
You know it: The notorious fashionista had a grin on her face as she chatted at the style event
She dressed her slim pins in leather trousers and threw a sleek and elegant floral blazer over the top of a basic grey T-shirt, showing off her signature flawless fashion instinct.Both
stylish ladies took the time to sit up on the stage and chat with the producers of the event about the topic of the hour: fashion and beauty blogging.Representing the model sector were Coco Rocha and Karolina Kurkova, both looking ultra stylish in flattering white ensembles. On the spot: Eva Chen, editor in chief of Lucky, spoke with Nicole about her label House Of Harlow 1960
Stylish ladies: Gillian Gorman Round, Nicole, and Eva posed together for a snap at the well attended event
Representing: Coco Rocha (L) and Karolina Kurkova looked stunning in white as they too showed up to represent fashion and beauty Legs for days: The model showed off her slim pins as she too addressed the audience
January returns as glamorous housewife Betty Francis when the first half of the seventh, and final, season of the critically acclaimed AMC show debuts April 13.The blonde beauty recently discussed with The Wrap how she feels her character has evolved over the years.'I
think that she went from being very implosive — always burying her emotions and all about the façade of who she is and what the American family is — to someone who's been through so much emotionally,' Jones said.'I don't know if she'll ever be truly a nice or more pleasant person, but she's definitely stronger,' she added. And I respect her more than in the beginning.' Back on the small screen: January Jones returns to Mad Men April 13
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