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Patent US4489146 - Reverse process for making chromium masks using silicon dioxide dry etch mask - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsOn a substrate (1) covered with a chromium layer (2), a positive resist layer (3) is applied, exposed through an exposure mask with the mask pattern corresponding to the negative of the respective chromium pattern, developed, and blanket-coated with a less than or equal to 10 nm thick layer (4) of silicon...http://www.google.com/patents/US4489146?utm_source=gb-gplus-sharePatent US4489146 - Reverse process for making chromium masks using silicon dioxide dry etch maskAdvanced Patent SearchPublication numberUS4489146 APublication typeGrantApplication numberUS 06/524,182Publication dateDec 18, 1984Filing dateAug 17, 1983Priority dateAug 25, 1982Fee statusPaidAlso published asDE3272888D1, EP0101752A1, EP0101752B1Publication number06524182, 524182, US 4489146 A, US 4489146A, US-A-4489146, US4489146 A, US4489146AInventorsGunther Bock, Bernhard Hafner, Reinhold Muhl, Klaus P. ThielOriginal AssigneeInternational Business Machines CorporationExport CitationBiBTeX, EndNote, RefManPatent Citations (3), Referenced by (11), Classifications (19), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetReverse process for making chromium masks using silicon dioxide dry etch mask
US 4489146 AAbstract
On a substrate (1) covered with a chromium layer (2), a positive resist layer (3) is applied, exposed through an exposure mask with the mask pattern corresponding to the negative of the respective chromium pattern, developed, and blanket-coated with a less than or equal to 10 nm thick layer (4) of silicon dioxide. Then photoresist layer (3) and the silicon layer (4) thereon are lifted off, and finally the chromium layer (2) is dry-etched, the remaining silicon dioxide layer (4) being used as an etch mask.
Chromium masks are used e.g. in the production of semiconductor circuits. By means of the reverse process, structures whose smallest dimensions are in the micrometer and the submicrometer range can be transferred into chromium layers with sharp edges.
1. A reverse process for making a chromium mask comprising:providing a substrate coated with a chromium layer; applying a layer of positive resist onto the chromium layer; exposing the said resist through an exposure mask, developing the resist and removing the unwanted portions thereof; blanket coating by cathode sputtering a layer of a silicon dioxide material which is dry-etched more slowly than said chromium layer; said conditions of said cathode sputtering is such that a layer of chromium oxide in the order of nanometers in thickness forms between said chromium layer and said silicon dioxide layer resulting in superior adherence between the said chromium and silicon dioxide layers; lifting off said blanket-coating layer where it is upon said resist and leaving the said blanket-coating where it is upon said chromium layer; and dry etching said chromium layer while using the remaining said blanket-coating layer as an etch mask to form said chromium mask. 2. The reverse process of claim 1 wherein the said silicon dioxide layer is less than about 10 nm thick.
3. The reverse process of claim 1 wherein said cathode sputtering is carried out in an argon atmosphere.
4. The reverse process of claim 3 wherein said dry etching takes place at an operating pressure of approximately 30μ bar, an overall radio frequency power of about 0.8 kW, a cathode voltage of about 2800 V, an anode bias of about 600 V, and an argon flow of approximately 100 ml/min.
5. The reverse process of claim 1 wherein the said chromium layer is etched by means of plasma etching.
6. The reverse process of claim 5 wherein said etching takes place in a atmosphere containing chlorinated hydrocarbons and oxygen.
7. The reverse process of claim 6 wherein the said chlorinated hydrocarbon part in the gaseous atmosphere is composed of 90 vol. % trichloroethylene and 10 vol. % dichloroethylene.
8. The reverse process of claim 7 wherein said etching takes place at a power of 300 to 350 Watts, an etching gas flow of approximately 12.5 ml/min. and a pressure of approximately 0.33μ bar.
9. A reverse process for making a chromium mask comprising:providing a substrate coated with a chromium layer; applying a layer of positive resist onto the chromium layer; exposing the said resist through an exposure mask, developing the resist and removing the unwanted portions thereof; blanket coating by chemical vapor deposition a layer of a silicon dioxide material which is dry-etched more slowly than said chromium layer; said conditions of said chemical vapor deposition is such that a layer of chromium oxide in the order of nanometers in thickness forms between said chromium layer and said silicon dioxide layer resulting in superior adherence between the said chromium and silicon dioxide layers; lifting off said blanket-coating layer where it is upon said resist and leaving the said blanket-coating where it is upon said chromium layer; and dry etching said chromium layer while using the remaining said blanket-coating layer as an etch mask to form said chromium mask. 10. The reverse process of claim 9 wherein the said chromium layer is etched by means of plasma etching.
11. The reverse process of claim 10 wherein said etching takes place in a atmosphere containing chlorinated hydrocarbons and oxygen.
The invention relates to a reverse process for making chromium masks, where onto a transparent substrate coated with a chromium layer a positive photoresist layer, in the following called positive resist is applied, subsequently exposed through an exposure mask, developed, and blanket-coated with a layer of a material which is dry-etched more slowly than chromium, where subsequently the photoresist layer and its superimposed material is removed, and finally the chromium is dry-etched, the remaining layer being used as an etch mask.
A reverse process is a process where the negative of the pattern of openings in an exposure mask is photolithographically etched out of a layer which consists e.g. of chromium. Chromium masks are used e.g. in semiconductor technology to transfer metallization patterns or patterns of diffusion windows photolithographically onto semiconductor substrates.
Reverse processes are of importance e.g. in those cases where for some reason or other the negative and the positive of a mask pattern are required. This applies to those cases where means must be provided to permit the production of a metallization pattern both by an additive and by a subtractive process. A reverse process is of importance also in those cases where it is more economical to make the negative instead of the positive of a mask pattern. To give an example? modern masks are usually produced with a pattern generator with which a program-controlled exposure beam exposes a photoresist layer on the mask material in those places where the photoresist and subsequently in an etching process the mask material are to be removed. If the mask pattern to be generated is of such a type that the overall surface of mask openings amounts to more than 50% of the overall mask surface it saves time to produce not the desired pattern of openings but its negative by means of the pattern generator, and to effect with the use of the mask the transfer of the desired pattern by means of a reverse process.
According to prior art, reverse processes are particularly carried out in such a manner that a mask representing the desired mask pattern is made either by reverse copying using photoemulsion plates of a mask representing the desired mask pattern, or by using the masks representing the desired mask pattern in connection with negative photoresists, in the following called negative resists. The disadvantage of reverse copying is that with respect to apparatus and material it is very complex, and that it involves the risk that the pattern to be produced is adulterated by dust particles that cannot be entirely excluded, in that either the emulsion layer is damaged, or in that the particles act like a mask during exposure. Reverse copying as well as the use of negative resist always include changed dimensions, and blurred edges. This is the reason for the fact that in large-scale production reverse copying as well as the use of negative resist no longer permit a transfer of very small pattern elements--the lower limit of transferrable dimensions is approximately 2 μm (in the case of positive resist the possible resolution is limited merely by the radiation and apparatus used).
In other words this means that with the increasing trend toward higher packing densities and smaller dimensions the above-mentioned methods are continuously getting less suitable. Compared with positive resists, negative resists have the added disadvantage that their storage lifetime is short due to their oxygen sensitivity.
U.S. Pat. No. 4,132,586 describes a process of obtaining a contrast reversal which does not require a reverse copying of the exposure mask, or the use of negative resists. In this process, a positive resist layer is applied on a substrate covered with a metal layer, e.g. chromium, exposed through an exposure mask showing a pattern of opening corresponding to the negative of the pattern to be etched in the metal layer, developed, and blanket-coated with a magnesium oxide layer. Subsequently, the photoresist and the magnesium oxide thereon are lifted off and finally the chromium is removed by means of reactive ion etching, the still existing magnesium oxide being used as an etch mask. The magnesium oxide layer is 200 nm thick. Although the method of the U.S. patent does not comprise a reverse copying, and although no negative resists are used, the pattern transfer nevertheless involves changed dimensions--owing to the relatively high layer thickness of the magnesium oxide mask--and there is no high quality edge sharpness. For that reason, the method described in the U.S. patent does not fully come up to the demands made to a method for transferring very densely packed patterns with partly very small pattern elements. Besides, the adhesion of the magnesium oxide layer on the metal is not fully satisfactory.
It is the object of the invention to provide an uncomplicated and reliable reverse process for making chromium masks, with which patterns of very high edge sharpness and with high imaging precision can be transferred also in those cases where the pattern elements have dimensions in the micrometer and submicrometer range.
The reverse process can be applied to the production of chromium masks whose mask patterns comprise structural elements whose smallest dimensions are within the range of the optical resolution limit (approximately 0.5 μm). The method is furthermore characterized in that the density of the produced defects is extremely low. There is furthermore the surprising effect that the silicon dioxide adheres excellently to the chromium, and that even very thin SiO2 -layers have excellent etching mask properties. For the given reasons, the reverse process according to the invention is highly suitable for the transfer of mask patterns used in the production of closely packed highly integrated semiconductor circuits.
The chromium is advantageously etched by means of plasma etching. In that connection, it is advantageous to operate in an atmosphere containing oxygen and chlorinated hydrocarbons at a volume ratio of 1:1. Under these conditions the etching rate of the silicon dioxide is negligible. If the percentage of the chlorinated hydrocarbons in the etching medium amounts to 90 vol.% trichloroethylene and 10 vol.% dichloroethylene no removal of silicon dioxide can be observed.
For further advantageous embodiments of the reverse process according to the invention reference is made to the subclaims.
In the following, the invention will be described with reference to drawings illustrating embodiments. The drawings show the following:
FIGS. 1 to 4 in schematic cross-sectional views the production of the mask according to the invention in various stages of its manufacture.
In the following, the production of the chromium mask as disclosed by the invention will be described with reference to FIGS. 1 to 4.
The structure shown in a cross-section in FIG. 1 consists of a substrate 1 made e.g. of soda-lime glass or quartz glass, superimposed by a chromium layer 2 with a thickness in the order of 100 nm and showing a pattern 3 of a positive photoresist representing the negative of the respective mask pattern. The photoresist pattern 3 is made by means of conventional photolithographic process steps. Suitable positive resist materials are e.g. phenolformaldehyde-resins (novolak) with a diazonaphtoquinone sensitizer. Advantageous examples for these positive resist materials are those marketed by Shipley Co. Inc, Newton, Mass., United States of America under the trade name AZ-1350 H, AZ-1350 J and AZ-1450 B.
Onto the structure of FIG. 1, a less than or equal to 10 nm thick silicon dioxide layer 4 is blanket-deposited. FIG. 2 is a cross-section of the thus obtained structure. Silicon dioxide layer 4 can be applied by means of cathode sputtering, or chemical vapor deposition. Silicon dioxide layer 4 adheres excellently to chromium layer 2. This seems to be due to the fact that under the conditions of application there forms a layer structure of a few nm thickness only which consists of a chromium oxide layer on chromium layer 2, a superimposed oxide layer containing chromium and silicon, and a top silicon dioxide layer. Subsequently a photoresist pattern 3 and the sectors of silicon dioxide layer 4 thereupon are lifted off. For that purpose, the structure is immersed into a medium dissolving the photoresist. Suitable materials are a mixture used at 90� to 100� C. which is marketed by a Indust-Ri-Chem. Laboratory, Richardson, Tex. under the trade name J-100, and Caro acid used at room temperature. J-100 contains 22.5 to 23.9% by weight non-volatile components consisting partly of the sodium salt of the alkylnaphtalene sulphonic acid and the free alkylnaphtalene sulphonic acid. The volatile part of the mixture contains 44.5 tetrachloroethylene, 37% by weight o-dichlorobenzene, 0.8% by weight p-dichlorobenzene, and 17.6% by weight phenol. The J-100 treatment takes approximately 40 minutes. Advantageous results are obtained with Caro acid which is obtained as a result of the mixing of 11 96% sulphonic acid and 45 ml 85% hydrogen peroxide. The processing with this Caro acid takes approximately 10 minutes. Under the process conditions, the action of the J-100 or the Caro acid on the photoresist is not substantially inhibited by quartz layer 4. In the structure of FIG. 3, silicon dioxide layer 4 is formed in accordance with the desired mask pattern.
In the following process step, chromium layer 2 is selectively removed by means of plasma etching, with silicon dioxide layer 4 being used as an etch mask. Plasma etching is suitably effected by means of an apparatus as described e.g. in U.S. Pat. No. 3,795,557. In this plasma etching device, the parts to be etched are arranged in a horizontal cylindrical vessel covered with a gas-tight lid, and having at least one gas inlet for the reactive gases, and one gas outlet connected to a vacuum pump. Wound on the outer surface of the cylindrical vessel a coil connected to an RF generator is provided supplying the energy necessary to maintain a plasma in the reaction vessel. As a reaction gas, a mixture of oxygen and chlorinated hydrocarbons is used, preferably a mixture of 90 vol.% C2 HCl3 and 10 vol.% C2 H2 Cl2. For etching chromium layer 2 with a thickness in the order of 100 nm approximately 20 minutes are required. Under the given reaction conditions the silicon dioxide is practically not affected at all. FIG. 4 depicts the result of the plasma etching in a cross-section. Chromium pattern 2 represents the negative of photoresist pattern 3 of FIG. 1. Owing to the low thickness of silicon dioxide layer 4 the negative of photoresist pattern 3 depicted in FIG. 1 can be transferred into chromium layer 2 with maximum imaging precision and a very high edge sharpness. Silicon dioxide layer 4 left on chromium pattern 2 can remain there, acting as a protection against mechanical damages to the chromium.
In the following, the production of the mask according to the invention will be described in greater detail with reference to an embodiment.
Starting with a plate of soda lime glass covered with a blanket chromium layer approximately 100 nm thick, an AZ-1350 H layer approximately 400 nm thick is spin-coated onto the chromium layer. This is followed by the conventional photolithographic process steps, i.e. drying and pre-heating of the photoresist layer, its exposure by means of a mercury high pressure lamp through a mask with a mask pattern corresponding to the negative of the desired pattern in the chromium layer, and its development in an aqueous KOH-solution. Without a subsequent heat treatment, the chromiumcoated glass plate covered with the photoresist is then placed into a cathode sputtering device. This device is a conventional cathode sputtering device comprising two horizontally arranged planar electrode plates parallel to each other, the lower electrode being provided to receive the substrates to be coated, and the upper electrode having on its side facing the lower electrode the target plate consisting of silicon dioxide. The cathode sputtering system used belongs to the category of directly driven anode systems. At the beginning of cathode sputtering, the pressure in the cathode sputtering chamber is less than 2�10-2 μ bar. Then argon is passed through the chamber with a flow speed of 100�5 ml/min. The operating pressure is approximately 30μ bar. The overall radio frequency power (13 nHz) is at 0.8 kW approximately. A voltage of 2800 V is applied to the cathode, and a bias of 600 V is applied to the anode. Under the given conditions, the silicon dioxide is deposited with a speed of approximately 0.2 nm/sec, i.e. it takes between 40 and 60 seconds to apply on the structure an approximately 10 nm thick silicon dioxide layer. In the subsequent process step, the photoresist and the silicon dioxide layer thereon are lifted off in that the entire structure is processed in a vessel containing J-100 heated to 90� to 100� C. There follows an intensive cleaning process with an aqueous alkaline solution and water. After drying, the chromium-coated glass plate covered with the quartz layer in accordance with the respective pattern is placed into the plasma etched device marketed by LFE-Corp. Waltham, Mass. U.S.A. under the designation LFE-(PFS/PCrE/PDS)-501.
The pressure in the plasma etching chamber is set to a value of approximately 0.33μ bar. The etching process is effected with a mixture of chlorinated hydrocarbons and oxygen at a volume ratio of 1:1, with 90 vol.% of the hydrocarbon consisting of trichlorethylene, and 10 vol.% of dichloroethylene. The gas flow quantity amounts to 12.5 ml/min. The operation takes place at a high frequency of 13.5 MHz, with a power of 350 Watt. For selectively etching off the approximately 100 nm thick chromium layer a period between 18 and 20 minutes is required. With the given mask producing method, pattern elements in the mask with dimensions approaching the optical limit of resolution (approximately 0.5 μm) could be perfectly transferred into the chromium layer. The chromium mask produced was furthermore of excellent edge sharpness. While the invention has been particularly shown and described with reference to the preferred embodiments thereof, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope thereof.
Patent CitationsCited PatentFiling datePublication dateApplicantTitleUS3795557 *May 12, 1972Mar 5, 1974Lfe CorpProcess and material for manufacturing semiconductor devicesUS4132586 *Dec 20, 1977Jan 2, 1979International Business Machines CorporationSelective dry etching of substratesUS4184909 *Aug 21, 1978Jan 22, 1980International Business Machines CorporationMethod of forming thin film interconnection systems* Cited by examinerReferenced byCiting PatentFiling datePublication dateApplicantTitleUS4706167 *Dec 17, 1985Nov 10, 1987Telemark Co., Inc.Circuit wiring disposed on solder mask coatingUS4729966 *Mar 26, 1986Mar 8, 1988Kabushiki Kaisha ToshibaProcess for manufacturing a Schottky FET device using metal sidewalls as gatesUS4774164 *Apr 6, 1987Sep 27, 1988Tegal CorporationChrome mask etchUS5089361 *Aug 17, 1990Feb 18, 1992Industrial Technology Research InstituteMask making processUS6391791 *Jul 27, 1999May 21, 2002Ulvac Coating CorporationDry-etching method and apparatus, photomasks and method for the preparation thereof, and semiconductor circuits and methods for the fabrication thereofUS6409312Mar 27, 2001Jun 25, 2002Lexmark International, Inc.Ink jet printer nozzle plate and process thereforUS6844117Mar 28, 2002Jan 18, 2005Ulvac Coating Corp.Dry-etching method and apparatus, photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereofUS6881991Mar 28, 2002Apr 19, 2005Ulvac Coating CorporationDry-etching method and apparatus, photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereofUS7313858 *Mar 31, 2004Jan 1, 2008Hitachi Global Storage Technologies Netherlands B.V.Method for manufacturing a magnetic head coil structure and/or pole tip structureUS20020139476 *Mar 28, 2002Oct 3, 2002Ulvac Coating CorporationDry-etching method and apparatus, photomasks and method for the preparation thereof, and semiconductor circuits and method for the fabrication thereofUS20040177493 *Mar 31, 2004Sep 16, 2004Richard HsiaoMagnetic head coil structure and method for manufacturing the same* Cited by examinerClassifications U.S. Classification430/5, 430/323, 430/314, 430/315, 216/67, 427/255.4, 216/75, 430/324International ClassificationG03F1/68, G03F1/80, H01L21/027, C23F1/00, H01L21/302, H01L21/3065, G03F7/26Cooperative ClassificationG03F1/68, G03F1/80European ClassificationG03F1/80, G03F1/68Legal EventsDateCodeEventDescriptionOct 11, 1983ASAssignmentOwner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, ARMONFree format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNORS:BOCK, GUNTHER;HAFNER, BERNHARD;MUHL, REINHOLD;AND OTHERS;REEL/FRAME:004177/0288Effective date: 19830713Owner name: INTERNATIONAL BUSINESS MACHINES CORPORATION, NEW YFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BOCK, GUNTHER;HAFNER, BERNHARD;MUHL, REINHOLD;AND OTHERS;REEL/FRAME:004177/0288Effective date: 19830713Feb 16, 1988FPAYFee paymentYear of fee payment: 4Feb 4, 1992FPAYFee paymentYear of fee payment: 8Mar 27, 1996FPAYFee paymentYear of fee payment: 12RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services


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This is the military-style equipment used to respond to the attack in Orlando - The Washington Post
Ron Hopper of the FBI said that Omar Mateen, the gunman behind the deadliest shooting spree in the country's history, had twice been investigated by the bureau and that in both cases, he was interviewed before the probes were concluded. (Reuters)
Circumstances were different Sunday. It was not immediately clear whether Orlando police used any equipment provided by the Pentagon in responding to the shooting at the Pulse nightclub, but photographs taken at the scene show police wearing far more armor than is common on many foot patrols by U.S. troops in a war zone, underscoring the threat they thought they could face.
An Orange County Sheriff’s Department SWAT member arrives to the scene of a fatal shooting at the Pulse nightclub in Orlando on June 12. (Phelan M. Ebenhack/AP)
Another AP image shows SWAT team members from outside the club. They’re wearing similar armor, along with black tactical boots and carrying submachine guns and handguns, which are strapped to holsters on their right sides.
Orange County Sheriff’s Department SWAT members arrive to a fatal shooting at the Pulse nightclub in Orlando. (Phelan M. Ebenhack/AP)
Orlando Police Chief John Mina said at a news conference Sunday that 11 Orlando police officers and three deputy sheriffs exchanged gunfire with the shooter while attempting to stop him. One of the officers was hit with a bullet in a helmet made of Kevlar, a synthetic fiber that is often used in body armor. The Orlando Police Department distributed a photograph of a damaged olive-green helmet on Twitter and said that it saved the officer’s life.
“It’s heroic, the individuals that went into the building knowing that there was an active shooter,” said Florida Gov. Rick Scott (R). “We should be very grateful that there were individuals who were willing to risk their lives to save other lives, and they clearly saved other lives.”
The helmet an Orlando officer was wearing when responding to the shooting at the Pulse nightclub. (Orlando Police Department via AP)
Police said the attack at Pulse, a popular gay club, began about 2 a.m. and that the shooter — identified as Omar Mateen, 29 — took hostages for about three hours. The rifle he was carrying typically holds about 30 rounds at a time in a magazine, meaning he had to reload numerous times to inflict that amount of violence. Authorities said 50 people, including Mateen, were killed and at least 53 more were injured in the attack.
[Gunman in Orlando pledged allegiance to ISIS; at least 50 killed in shooting rampage at gay club]
Mina said that police rammed the outside wall of the club about 5 a.m. with an armored BearCat vehicle and set off a “controlled detonation” to distract the attacker. BearCat stands for “Ballistic Engineered Armored Response Counter Attack Truck,” and is the best-selling vehicle made by Lenco, an armored-vehicle maker with headquarters in Pittsfield, Mass. The company has supplied vehicles to the U.S. military and police departments abroad and makes a variant of a mine-resistant vehicle commonly known as the MRAP.
Investigators from the office of the medical examiner investigate the west side of Pulse. (Doug Clifford/Tampa Bay Times via AP)
Some observers on social media noted on Sunday the utility of having tactical equipment and vehicles in a police arsenal. The Obama administration introduced new restrictions to the Pentagon’s excess-property program last year, saying new written justifications would be needed to transfer items on a “controlled” equipment list that included wheeled tactical vehicles, riot gear and a variety of firearms.
@POTUS @EricHolder @cnn @msnbc Was it preferable to rescue Orlando hostages with $227,958 Bearcat or free US surplus MRAP armored vehicle?
— Darkblue714 (@darkblue714) June 12, 2016
The SWAT in Orlando used a 'Bearcat' armored vehicle to help stop gunman threat. I don't wanna hear about police militarization ever again
— Tyler (@TylerASU13) June 12, 2016
Kevlar helmet saved officers life in Orlando.. But, some say police are too militarized… Smh pic.twitter.com/xBjbfHOTua
— Aaron Evans (@AaronEvans07) June 12, 2016
What was all that about militarized police? This is the threat we face now. God bless you all. RIP victims. https://t.co/6K7YPzAXKb
— Big City Beat Cop (@BigCityBeatCop) June 12, 2016
Mina has said that he was against obtaining old U.S. military vehicles for his department, citing the maintenance they require. He said two years ago that he wanted a new, $230,000 BearCat to replace an aging tactical vehicle in his department.
“It does look militaristic, but it’s designed for law enforcement,” Mina said in 2014, according to the Orlando Sentinel. “We don’t use these vehicles for riots or any type of crowd control.”
On Monday, Mina said Mateen was holed up in a bathroom with at least four hostages after his initial attack and pledged allegiance to the Islamic State terrorist group during a 911 call made at that time. At some point, Mateen mentioned having some form of explosives, prompting authorities to storm the club. Some people escaped through the hole whole in the wall, and Mateen opened fire.
This story was originally published Sunday evening at 6:46 p.m. and republished Monday morning with additional details.
How the Pentagon’s distribution of military equipment is about to tighten again
Pentagon defends program supplying military equipment to Ferguson police
Military gear beyond Ferguson: How the Pentagon’s equipment has spread to police

type: global

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Rene Duhon Obituary - Scott, LA | The Advertiser
More Obituaries for Rene Duhon
Rene Irving Duhon
Scott - A Mass of Christian Burial will be held on Wednesday, November 6, 2019 at 1:00 PM in Sts. Peter & Paul Catholic Church in Scott for Rene Irving Duhon, 94, who died on Saturday, November 2, 2019 at Rosewood Assisted Living in Lafayette surrounded by his family.
Entombment will be in Sts. Peter & Paul Mausoleum in Scott.
The Most Reverend Michael Jarrell, Bishop Emeritus of the Diocese of Lafayette, will be the Celebrant of the funeral Mass.
Survivors include two daughters, Diane Soniat and Linda Duhon Thornton; one son, Neil Duhon; one sister, Geraldine "Gerry" D. Savoy; four grandchildren, Seth Duhon Thornton, Jessica Duhon, Jeremy Duhon and Niza Gentry; and two great grandchildren.
He was preceded in death by his beloved wife, Sybil Jung Duhon; and his parents, Oda and Edia Duhon.
Rene Irving Duhon was a native of Lafayette, Louisiana and resident of New Orleans for most of his life and more recently a resident of Scott. He graduated from Judice High School in 1943 and went on to received a B.S Degree from SLI in 1949. Mr. Duhon worked for Sears & Roebuck for many years until his retirement in 1988. He was a veteran of military service, proudly serving his country in the United States Navy in WWII and was a member of the Judice VFW Post 9822. Mr. Duhon also served as a member of the Sts. Peter & Paul Knights of Columbus Council 7568 and was a parishioner of Sts. Peter & Paul Catholic Church. Rene was blessed with a servant's heart and spent much of his time giving back to his community through volunteer work. He enjoyed spending time with his family and friends and will be dearly missed by all who knew and loved him.
Pallbearers will be Neil Duhon, Michael Soniat, Steven Duhon Thornton, Seth Duhon Thornton, Louis Duhon, Adam Sellers, Paul Sellers and Ted Lege.
The family requests that visitation be observed in Martin & Castille's SCOTT location on Wednesday, November 6, 2019 from 9:00 AM until time of services.
A Rosary will be prayed on Wednesday at 11:00 AM in the funeral home.
In lieu of flowers memorial contributions can be made in Mr. Duhon's name to Semper Fi Fund, 825 College Blvd., Suite 102, PMB 609, Oceanside, CA 92057.
A heartfelt appreciation is extended by the Duhon family to the staff of Rosewood Assisted Living, St. Joseph Hospice, and Senior Helpers.
Martin & Castille-SCOTT-802 Alfred St., Scott, LA 70583, 337-234-2320
Published in the The Advertiser from Nov. 4 to Nov. 5, 2019
What will you miss most about Rene Irving Duhon?
Inform family & friends of Rene's passing.

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Product Reviews: Hot Money and the Politics of Debt, Third edition: Amazon.com
5.0 out of 5 stars Bank is a Four Letter Word, January 3, 2011
This review is from: Hot Money and the Politics of Debt, Third edition (Paperback)
This book is an in depth look at "hot money," money that can move around quickly for many reasons: it is dirty, tax avoidance, flight to safety and many more. What is surprising is that tax avoidance by transnational corporations dwarfs that of the "illegal" sources. It covers money laundering and how it evolved through enterprising individuals and equally enterprising countries. The book also shows how the debt of developing countries is linked to politics, corruption and the flow of hot money.It is an eye opener. In 1984 Swiss banks controlled $350B in foreign assets, roughly equivalent to the net foreign debt of the world's developing countries. Coincidence? But the U.S. continues to embargo, bomb and invade defenseless countries to cause a capital flight to the safety of the U.S., which uses the hot money to finance more of the same,... and the scam goes on.The book is serious but approaches the subject with both wit and humor: Referring to the brother of the president of Mexico, the author writes that over the 6 years he was head of the government's food subsidy and distribution, he earned $190K annually, out of which, by frugal living, he managed to save $112M, the amount found in his Swiss bank account.It also brings up and interesting question: with all this bad debt from developing countries on the books of the major banks, how much longer can this house of cards withstand a total collapse?
5.0 out of 5 stars A Conspiracy of Evidence, July 17, 2012
By andrew gillette - See all my reviews
This book details the history of black markets that are transparent to real markets. For example how does the US illicit drug trade impact Wallstreet liquidity; or what is the practical function of the world bank and IMF as they relate to impoverished developing countries? If these fringe questions concern you, then you should read this book because it is very well documented in a scholarly fashion.
5.0 out of 5 stars Excellent, even if "grand unification" theme is suspect, December 30, 2005
By R. C. O'Brien (Chicago, IL United States) - See all my reviews
This is a book every single US Senator and Representative should read.The title derives from the reality that illicitly gotten funds create their own momentum as the funds are laundered throughout the world, creating interest, mayhem, and leaving 3rd world countries (preyed upon for weak financial regulations) struggling under massive debt they didn't really incur.
Hot Money and the Politics of Debt, Third edition by R. T. Naylor (Paperback - September 30, 2004)

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Shop Fossil Women's Neely Blue Stainless-Steel Japanese Quartz Fashion Watch - Free Shipping Today - Overstock.com - 20566623
I absolutely love this watch! It look so much better in person than what it looks like in the stock photo. I love how it looks classy, yet the blue color makes it also look sporty. What I also love is the band. Unlike the band with links, this band wraps around your wrist beautifully. I found adjusting the size to the band easy but you can walk into any Fossil store and they will adjust it for you. Now I am debating about getting this style in different colors.
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Myra S. Mar 19, 2018

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Paidi O'Raghallaigh - Semantic Scholar
Paidi O'Raghallaigh
Paul M. Leonardi15
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As academic scholars in an applied field our central mission is to develop theory that both contributes knowledge to the academic discipline and applies that knowledge to practice. However, our… (More)
Crowdsourcing from the Community to Resolve Complex Service Requests
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A Typology for Organizational ICT Practice
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This paper reports on a project that took place in a large corporation to build a Customer Profile dashboard to provide a holistic view of its customers. Prior to the project, no such view existed… (More)
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text: The Art of Decoying BucksNAH Staff / North American HunterPlayYou Won't Believe What Dragged Away!Staff / NorthAmericanFisherman.com PlayEarly Archery BullsNAH Staff / North American HunterPlayAlaska Grizzly AdventureNAH Staff / North American HunterPlayOVERLAND: Mercedes-Maybach G650Gayne C. Young / Outdoors Digital EditorPlayYou Call the Shots - River Bottom BuckYou call the shot on this South Dakota bruiser.by NAH StaffNorth American HunterFriday at 7:37 AMTrying The New GP100 .44 SpecialLet's see how the new Ruger GP100 handelsby StaffNorth American HunterThursday at 10:16 AMEXPLODING Arrowhead!Do they hit with a BANG or a whimper?by StaffNorth American HunterThursday at 10:01 AMMock Scrape PlanningIf you plan to put in the effort, make a plan. You'll thank yourself come fall.by NAH StaffNorth American HunterThursday at 7:31 AMWild Texas HogsThese feral hogs provide year-round hunting opportunities and help out ranches in need.by NAH StaffNorth American HunterThursday at 6:52 AMYou’ll Want This Cobra…Where's Rikki-Tikki-Tavi when ya' need 'em?!by Gayne C. YoungNorth American HunterFriday at 10:06 AMReal Hunting?How a picture of a blind turned hunter against hunter.by Gayne C. YoungNorth American HunterThursday at 1:01 PMWhat The Hell Camo!This Camo is INSANE and INSANELY priced!by Gayne C. YoungNorth American HunterWednesday at 11:32 AM460 Magnum ONE HANDED!Firing a beast of a hand cannon!by Gayne C. YoungNorth American HunterWednesday at 11:25 AMDon't Lose Your Marbles...Cuz you can use them to hunt!by Gayne C. YoungNorth American HunterWednesday at 11:07 AMOVERLAND: TAXA TigerMoth TrailerCamp and hunt in mobile comfort!by Gayne C. YoungNorth American HunterWednesday at 10:35 AMHunting Black Death With J, Alain SmithProfessional Hunter J. Alain Smith goes after Black Death...Lots of Black Death!by StaffNorth American HunterWednesday at 10:22 AMTrick Shooting From A...Wheelchair!Unbelievable shots!by StaffNorth American HunterWednesday at 8:20 AMFirst PronghornThere's nothing quite like your first one.by NAH StaffNorth American HunterWednesday at 7:22 AMMule Deer StalkerSometimes your only hope of getting into bow range is the belly crawl.by NAH StaffNorth American HunterWednesday at 7:12 AMTrending on ScoutFinding Broncos: 5 Prospects To Avoid At 205 Times the A-10 Saved Lives in CombatEarly Archery BullsMiami Dolphins Land TE Thomas for Draft PickAbrams, Bradleys & Strykers Get RPG DefensesTrucker's Friend Survival ToolDon't let the name fool ya'! This tool is for EVERYONE!by Gayne C. YoungNorth American HunterTuesday at 12:03 PMOVERLAND: Kahn Double Cab TruckAnother Overland Dream vehicle!by Gayne C. 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Patent US4575371 - Urinary catheter - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Sign inPatentsThe present invention discloses a urinary catheter with a retention member in the form of an expandable balloon. The expandable balloon is arranged below the inlet opening and so designed that in its inflated condition a portion projects forward past the catheter tip at some distance from the inlet opening....http://www.google.com/patents/US4575371?utm_source=gb-gplus-sharePatent US4575371 - Urinary catheterAdvanced Patent SearchPublication numberUS4575371 APublication typeGrantApplication numberUS 06/738,509PCT numberPCT/SE1982/000124Publication dateMar 11, 1986Filing dateApr 16, 1982Priority dateApr 16, 1981Fee statusLapsedAlso published asDE3267985D1, EP0088764A1, EP0088764B1, WO1982003557A1Publication number06738509, 738509, PCT/1982/124, PCT/SE/1982/000124, PCT/SE/1982/00124, PCT/SE/82/000124, PCT/SE/82/00124, PCT/SE1982/000124, PCT/SE1982/00124, PCT/SE1982000124, PCT/SE198200124, PCT/SE82/000124, PCT/SE82/00124, PCT/SE82000124, PCT/SE8200124, US 4575371 A, US 4575371A, US-A-4575371, US4575371 A, US4575371AInventorsPercy Nordqvist, Eric HylerstedtOriginal AssigneePercy Nordqvist, Eric HylerstedtExport CitationBiBTeX, EndNote, RefManPatent Citations (10), Referenced by (124), Classifications (8), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetUrinary catheter
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2011Jun 30, 2011Michael HogendijkApparatus and methods for reducing embolization during treatment of carotid artery diseaseUS20130345796 *Mar 4, 2013Dec 26, 2013St. Jude Medical, Cardiology Division, Inc.Apparatus and method for aortic protection and tavi planar alignmentWO2000024337A2 *Oct 28, 1999May 4, 2000Srs Medical Systems, Inc.Flow-around valve with contoured fixation balloon and channel blocking meansWO2000024337A3 *Oct 28, 1999Nov 9, 2000Srs Medical Systems IncFlow-around valve with contoured fixation balloon and channel blocking meansWO2000040289A2 *Jan 7, 2000Jul 13, 2000Ballard Medical ProductsGastric balloon catheter with improved balloon orientationWO2000040289A3 *Jan 7, 2000Feb 1, 2001Ballard Med ProdGastric balloon catheter with improved balloon orientationWO2009094522A1 *Jan 23, 2009Jul 30, 2009Cedars-Sinai Medical CenterTulip-shaped balloon catheter and methods for pericardiocentesis and percutaneous pericardiotomyWO2011056587A1Oct 26, 2010May 12, 2011Poiesis Medical, LlcBalloon encapsulated catheter tipWO2011056588A1Oct 26, 2010May 12, 2011Poiesis Medical, LlcA method for manufacturing a balloon encapsulated catheter tipWO2013188257A1Jun 10, 2013Dec 19, 2013Kim Sungyul DCatheter and method for its use* Cited by examinerClassifications U.S. Classification604/103.07, 604/916, 604/103.09International ClassificationA61F2/958, A61M25/00Cooperative ClassificationA61M2025/1065, A61M25/1002European ClassificationA61M25/10ALegal EventsDateCodeEventDescriptionFeb 4, 1986ASAssignmentOwner name: ESTATE OF PERCY NORDQVISTFree format text: ASSIGNMENT OF ASSIGNORS INTEREST.;ASSIGNOR:HYLERSTEDT, ERIC;REEL/FRAME:004506/0133Effective date: 19851125Oct 10, 1989REMIMaintenance fee reminder mailedMar 11, 1990LAPSLapse for failure to pay maintenance feesMay 22, 1990FPExpired due to failure to pay maintenance feeEffective date: 19900311RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services

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Patent US6734861 - System, method and article of manufacture for an interlock module in a ... - Google PatentsSearch Images Maps Play YouTube News Gmail Drive More »Advanced Patent Search | Sign inAdvanced Patent SearchPatentsA system, method and article of manufacture are afforded for providing an interlock module in a graphics pipeline. initially, first information is received indicative of a first set of pixels that overlap a primitive. Such first set of pixels are currently being processed in the graphics pipeline. Also...http://www.google.com/patents/US6734861?utm_source=gb-gplus-sharePatent US6734861 - System, method and article of manufacture for an interlock module in a computer graphics processing pipelinePublication numberUS6734861 B1Publication typeGrantApplication numberUS 09/690,101Publication dateMay 11, 2004Filing dateOct 16, 2000Priority dateMay 31, 2000Fee statusPaidAlso published asUS7068272Publication number09690101, 690101, US 6734861 B1, US 6734861B1, US-B1-6734861, US6734861 B1, US6734861B1InventorsJames M. Van Dyke, Douglas A. Voorhies, James E. Margeson, III, John MontrymOriginal AssigneeNvidia CorporationPatent Citations (31), Non-Patent Citations (4), Referenced by (43), Classifications (4), Legal Events (4) External Links: USPTO, USPTO Assignment, EspacenetSystem, method and article of manufacture for an interlock module in a computer graphics processing pipelineUS 6734861 B1Abstract A system, method and article of manufacture are afforded for providing an interlock module in a graphics pipeline. initially, first information is received indicative of a first set of pixels that overlap a primitive. Such first set of pixels are currently being processed in the graphics pipeline. Also received is second information indicative of a second set of pixels that overlap the primitive. The second set of pixels are ready for being inputted in the graphics pipeline for processing. Thereafter, the first information and the second information are evaluated, and the second set of pixels is conditionally processed based on the evaluation.
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2005Jun 7, 2006Nvidia CorporationPixel processing system and methodEP1759380A2 *May 13, 2005Mar 7, 2007Nvidia CorporationLow power programmable processor* Cited by examinerClassifications U.S. Classification345/506International ClassificationG06T15/00Cooperative ClassificationG06T15/005European ClassificationG06T15/00ALegal EventsDateCodeEventDescriptionSep 19, 2011FPAYFee paymentYear of fee payment: 8Sep 20, 2007FPAYFee paymentYear of fee payment: 4Aug 28, 2001ASAssignmentOwner name: NVIDIA CORPORATION, CALIFORNIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:VAN DYKE, JAMES M.;VOORHIES, DOUGLAS A.;MARGESON III, JAMES E.;AND OTHERS;REEL/FRAME:012116/0182;SIGNING DATES FROM 20001214 TO 20010110Owner name: NVIDIA CORPORATION 3535 MONROE STREETSANTA CLARA,Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:VAN DYKE, JAMES M. /AR;REEL/FRAME:012116/0182;SIGNING DATES FROM 20001214 TO 20010110Jan 16, 2001ASAssignmentOwner name: NVIDIA, CALIFORNIAFree format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:VAN DYKE, JAMES M.;VOORHIES, DOUGLAS A.;MARGESON, III, JAMES E.;AND OTHERS;REEL/FRAME:011441/0357;SIGNING DATES FROM 20001214 TO 20010110Owner name: NVIDIA 3535 MONROE STREETSAN CLARA, CALIFORNIA, 95Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:VAN DYKE, JAMES M. /AR;REEL/FRAME:011441/0357;SIGNING DATES FROM 20001214 TO 20010110RotateOriginal ImageGoogle Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send FeedbackData provided by IFI CLAIMS Patent Services©2012 Google


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Bacterial wilt of groundnut (Book, 1994) [WorldCat.org]
I thought you might be interested in this item at http://www.worldcat.org/oclc/30952306 Title: Bacterial wilt of groundnut Author: V K Mehan; International Crops Research Institute for the Semi-Arid Tropics Publisher: Patnacheru, Andhra Prudesh : International Crops Research Institute for the Semi-Arid Tropics, 1994. ISBN/ISSN: 9290662840 9789290662846 OCLC:30952306
V K Mehan; International Crops Research Institute for the Semi-Arid Tropics.
Patnacheru, Andhra Prudesh : International Crops Research Institute for the Semi-Arid Tropics, 1994.
Information bulletin (International Crops Research Institute for the Semi-Arid Tropics), no. 35.
Find more information about: V K Mehan
9290662840 9789290662846
30952306
iv, 23 pages : illustrations, maps ; 24 cm.
V.K. Mehan [and others].
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Bacterial wilt of groundnut/V K Mehan; International Crops Research Institute for the Semi-Arid Tropics.;; Patnacheru, Andhra Prudesh : International Crops Research Institute for the Semi-Arid Tropics, 1994.

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Haunted Battlefields by Dan Asfar, Paperback | Barnes & Noble®
After the rifles, cannons and bugles fall silent, when the losses have been counted and the mourners are gone, the ghosts of war return. Drawing on the Civil War, the War of 1812, the Revolutionary War and other conflicts, storyteller Dan Asfar weaves tales of phantom soldiers, supernatural interventions and star-crossed lovers, capturing both the drama of battle and
9781894877435
After the rifles, cannons and bugles fall silent, when the losses have been counted and the mourners are gone, the ghosts of war return. Drawing on the Civil War, the War of 1812, the Revolutionary War and other conflicts, storyteller Dan Asfar weaves tales of phantom soldiers, supernatural interventions and star-crossed lovers, capturing both the drama of battle and the enduring mystery of the afterlife: • Glowing blue orbs and phantom drumbeats shock visitors to Antietam National Battlefield, the scene of severe Civil War casualties. • The Angel of Mons descends from the heavens to spare thousands of British troops from a German assault during World War One. • The ghostly soldiers of Camp Hill--a phantom Civil War procession--startle travelers near Harpers Ferry, West Virginia • In a fascinating tale of divided loyalties, a woman's love affair with a Confederate soldier brings a curse on her staunchly pro-Union family. • At Little Bighorn, supernatural remnants of the infamous slaughter bewilder a Vietnam vet. • As sites of suffering and incomparable sacrifice, battlefields remain poignant reminders of our most haunting history.
5.25(w) x 8.25(h) x 0.56(d)

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CPL William Edwin Mueller (1931-2010) - Find A Grave Memorial
CPL William Edwin Mueller
18 Oct 2010 (aged 78)
Section 30 Number 3011
61625041 · View Source
My dad was born in Chicago October 25, 1931 to Frances Lois (nee Mangels) and Harold Clarke Mueller.
He and my mother were married in Chicago July 14, 1956. They later divorced. My dad and Harriet were married from December 29, 1972 until his death October 18, 2010.
From the Barron Wisconsin newspaper, "William Edwin Mueller died October 18th at his home in Barron Wisconsin with his beloved wife Harriet (nee Anderson) at his side.
Mourning his loss are five daughters; Laura Aanenson (Gregory), Lizabeth Chocian (Scott), Lana Gruber (James), Lou Ann Mueller and Victoria Bray (Terrence); 15 grandchildren, 10 great-grandchildren and many nieces and nephews.
Preceded in death by his mother and step-father Robert Brenke, sister Lois Cuevas, and daughter Patricia Mueller. Survived by sisters Janice Stetz and Karen Brenke, and brothers Ernie Mueller (Kylene), Alexander (Barbara) and Robert E. Brenke Jr.
Service at Salem Lutheran Church, Barron at 11am Monday October 25th. William will be laid to rest at Ft. Snelling National Cemetery in Minneapolis."
Harold Clarke Mueller
Frances Lois Mangels Brenke
Joan Julia Walton Mueller
1933–2012 (m. 1956)
Find A Grave Memorial 61625041
Sponsored by Laura Aanenson
Find A Grave, database and images (https://www.findagrave.com : accessed ), memorial page for CPL William Edwin Mueller (25 Oct 1931–18 Oct 2010), Find A Grave Memorial no. 61625041, citing Fort Snelling National Cemetery, Minneapolis, Hennepin County, Minnesota, USA ; Maintained by Laura Aanenson (contributor 47083735) .
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