Title: Modification of low-temperature silicon dioxide films under the influence of technology factors,
Abstract: The structure, composition and electrophysical characteristics of
low-temperature silicon dioxide films under influence of various technology
factors, such as ion implantation, laser irradiation, thermal and photonic
annealing, have been studied. Silicon dioxide films have been obtained by
monosilane oxidation using plasma chemical method, reactive cathode sputtering,
and tetraethoxysilane pyrolysis. In the capacity of substrates, germanium,
silicon, gallium arsenide and gallium nitride were used. Structure and
composition of the dielectric films were analyzed by methods of infrared
transmission spectroscopy and frustrated internal reflectance spectroscopy.
Analysis of modification efficiency of low-temperature silicon dioxide films
has been made depending on the substrate type, structure and properties of the
films, their moisture permeability, dielectric deposition technique, type and
dose of implantation ions, temperature and kind of annealing.