Title: Low resistive edge contacts to CVD-grown graphene using a CMOS compatible metal,
Abstract: The exploitation of the excellent intrinsic electronic properties of graphene
for device applications is hampered by a large contact resistance between the
metal and graphene. The formation of edge contacts rather than top contacts is
one of the most promising solutions for realizing low ohmic contacts. In this
paper the fabrication and characterization of edge contacts to large area
CVD-grown monolayer graphene by means of optical lithography using CMOS
compatible metals, i.e. Nickel and Aluminum is reported. Extraction of the
contact resistance by Transfer Line Method (TLM) as well as the direct
measurement using Kelvin Probe Force Microscopy demonstrates a very low width
specific contact resistance.