Title: Electroforming-Free TaOx Memristors using Focused Ion Beam Irradiations,
Abstract: We demonstrate creation of electroforming-free TaOx memristive devices using
focused ion beam irradiations to locally define conductive filaments in TaOx
films. Electrical characterization shows that these irradiations directly
create fully functional memristors without the need for electroforming. Ion
beam forming of conductive filaments combined with state-of-the-art
nano-patterning presents a CMOS compatible approach to wafer level fabrication
of fully formed and operational memristors.