Title: Physics-Based Modeling of TID Induced Global Static Leakage in Different CMOS Circuits,
Abstract: Compact modeling of inter-device radiation-induced leakage underneath the
gateless thick STI oxide is presented and validated taking into account CMOS
technology and hardness parameters, dose-rate and annealing effects, and
dependence on electric modes under irradiation. It was shown that proposed
approach can be applied for description of dose dependent static leakage
currents in complex FPGA circuits.