Title: Micromagnetic study of a feasibility of the magnetic anisotropy engineering in nano-structured epitaxial films of (III,Mn)V ferromagnetic semiconductors,
Abstract: The attainability of modification of the apparent magnetic anisotropy in
(III,Mn)V ferromagnetic semiconductors is probed by means of the
finite-elements-based modelling. The most representative case of (Ga,Mn)As and
its in-plane uniaxial anisotropy is investigated. The hysteresis loops of the
continuous films of a ferromagnetic semiconductor as well as films structured
with the elliptic antidots are modelled for various eccentricity, orientation,
and separation of the anti dots. The effect of anti-dots on the magnetic
anisotropy is confirmed but overall is found to be very weak. The subsequent
modelling for (Ga,Mn)As film with the elliptic dots comprising of metallic NiFe
shows much stronger effect, revealing switching of the magnetic moment in the
ferromagnetic semiconductor governed by the switching behavior of the metallic
inclusions.