Title: Characterization of Traps at Nitrided SiO$_2$/SiC Interfaces near the Conduction Band Edge by using Hall Effect Measurements,
Abstract: The effects of nitridation on the density of traps at SiO$_2$/SiC interfaces
near the conduction band edge were qualitatively examined by a simple, newly
developed characterization method that utilizes Hall effect measurements and
split capacitance-voltage measurements. The results showed a significant
reduction in the density of interface traps near the conduction band edge by
nitridation, as well as the high density of interface traps that was not
eliminated by nitridation.