Title: Tent--Shaped Surface Morphologies of Silicon: Texturization by Metal Induced Etching,
Abstract: Nano--metal/semiconductor junction dependent porosification of silicon (Si)
has been studied here. The silicon (Si) nanostructures (NS) have been textured
on n-- and p-- type silicon wafers using Ag and Au metal nano particles induced
chemical etching. The combinations of n--Si/Ag and p--Si/Au form ohmic contact
and result in the same texturization on the Si surface on porosification where
tent--shaped morphology has been observed consistently with n-- and p--type Si.
Whereas, porosification result in different surface texturization for other two
combinations (p--Si/Ag and n--Si/Au) where Schottkey contacts are formed.
Quantitative analysis have been done using ImageJ to process the SEM images of
SiNS, which confirms that the tent like SiNS are formed when etching of silicon
wafer is done by AgNPs and AuNPs on n and p type Si wafer respectively. These
easily prepared sharp tent--shaped Si NSs can be used for enhanced field
emission applications.