Title: An Enhanced Lumped Element Electrical Model of a Double Barrier Memristive Device,
Abstract: The massive parallel approach of neuromorphic circuits leads to effective
methods for solving complex problems. It has turned out that resistive
switching devices with a continuous resistance range are potential candidates
for such applications. These devices are memristive systems - nonlinear
resistors with memory. They are fabricated in nanotechnology and hence
parameter spread during fabrication may aggravate reproducible analyses. This
issue makes simulation models of memristive devices worthwhile.
Kinetic Monte-Carlo simulations based on a distributed model of the device
can be used to understand the underlying physical and chemical phenomena.
However, such simulations are very time-consuming and neither convenient for
investigations of whole circuits nor for real-time applications, e.g. emulation
purposes. Instead, a concentrated model of the device can be used for both fast
simulations and real-time applications, respectively. We introduce an enhanced
electrical model of a valence change mechanism (VCM) based double barrier
memristive device (DBMD) with a continuous resistance range. This device
consists of an ultra-thin memristive layer sandwiched between a tunnel barrier
and a Schottky-contact. The introduced model leads to very fast simulations by
using usual circuit simulation tools while maintaining physically meaningful
parameters.
Kinetic Monte-Carlo simulations based on a distributed model and experimental
data have been utilized as references to verify the concentrated model.