Title: Nature of carrier injection in metal/2D semiconductor interface and its implications to the limits of contact resistance,
Abstract: Monolayers of transition metal dichalcogenides (TMDCs) exhibit excellent
electronic and optical properties. However, the performance of these
two-dimensional (2D) devices are often limited by the large resistance offered
by the metal contact interface. Till date, the carrier injection mechanism from
metal to 2D TMDC layers remains unclear, with widely varying reports of
Schottky barrier height (SBH) and contact resistance (Rc), particularly in the
monolayer limit. In this work, we use a combination of theory and experiments
in Au and Ni contacted monolayer MoS2 device to conclude the following points:
(i) the carriers are injected at the source contact through a cascade of two
potential barriers - the barrier heights being determined by the degree of
interaction between the metal and the TMDC layer; (ii) the conventional
Richardson equation becomes invalid due to the multi-dimensional nature of the
injection barriers, and using Bardeen-Tersoff theory, we derive the appropriate
form of the Richardson equation that describes such composite barrier; (iii) we
propose a novel transfer length method (TLM) based SBH extraction methodology,
to reliably extract SBH by eliminating any confounding effect of temperature
dependent channel resistance variation; (iv) we derive the Landauer limit of
the contact resistance achievable in such devices. A comparison of the limits
with the experimentally achieved contact resistance reveals plenty of room for
technological improvements.