Title: Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC,
Abstract: Elucidating the interaction between magnetic moments and itinerant carriers
is an important step to spintronic applications. Here, we investigate magnetic
and transport properties in d0 ferromagnetic SiC single crystals prepared by
postimplantation pulsed laser annealing. Magnetic moments are contributed by
the p states of carbon atoms, but their magnetic circular dichroism is
different from that in semi-insulating SiC samples. The anomalous Hall effect
and negative magnetoresistance indicate the influence of d0 spin order on free
carriers. The ferromagnetism is relatively weak in N-implanted SiC compared
with that in Al-implanted SiC after annealing. The results suggest that d0
magnetic moments and itinerant carriers can interact with each other, which
will facilitate the development of SiC spintronic devices with d0
ferromagnetism.