Title: Nano-optical imaging of monolayer MoSe2 using tip-enhanced photoluminescence,
Abstract: Band gap tuning in two-dimensional transitional metal dichalcogenides (TMDs)
is crucial in fabricating new optoelectronic devices. High resolution
photoluminescence (PL) microscopy is needed for accurate band gap
characterization. We performed tip-enhanced photoluminescence (TEPL)
measurements of monolayer MoSe2 with nanoscale spatial resolution, providing an
improved characterization of the band gap correlated with the topography
compared with the conventional far field spectroscopy. We also observed PL
shifts at the edges and investigated the spatial dependence of the TEPL
enhancement factors.