Title: Non Volatile MoS$_{2}$ Field Effect Transistors Directly Gated By Single Crystalline Epitaxial Ferroelectric,
Abstract: We demonstrate non-volatile, n-type, back-gated, MoS$_{2}$ transistors,
placed directly on an epitaxial grown, single crystalline,
PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$ (PZT) ferroelectric. The transistors show decent
ON current (19 ${\mu}A/{\mu}$m), high on-off ratio (10$^{7}$), and a
subthreshold swing of (SS ~ 92 mV/dec) with a 100 nm thick PZT layer as the
back gate oxide. Importantly, the ferroelectric polarization can directly
control the channel charge, showing a clear anti-clockwise hysteresis. We have
selfconsistently confirmed the switching of the ferroelectric and corresponding
change in channel current from a direct time-dependent measurement. Our results
demonstrate that it is possible to obtain transistor operation directly on
polar surfaces and therefore it should be possible to integrate 2D electronics
with single crystalline functional oxides.