Title: Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy,
Abstract: N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers
by plasma-assisted molecular beam epitaxy growth. The current-voltage
characteristics show high-quality rectification and electroluminescence
characteristics with a high on/off current ratio and interband photon emission.
The measured electroluminescence spectrum is dominated by strong near-band edge
emission, while deep level luminescence is greatly suppressed. A very low
dislocation density leads to a high reverse breakdown electric field. The low
leakage current N-polar diodes open up several potential applications in
polarization-engineered photonic and electronic devices.