context: The specific capacitances of the as-prepared ASSPs at different scan rates are presented in Fig. 3(d). The maximum specific capacitance of Bi/CNTs is 68.7 F cm−3 calculated from CV curves, which is larger than the values of the ASSPs based on 2D Bi (specific capacitance of 36.8 F cm−3) and CNTs (specific capacitance of 29.4 F cm−3). More importantly, the specific capacitance of the as-assembled Bi/CNT ASSP still maintains 33.0 F cm−3 with 48% capacitance retention when the scan rate is increased 20-fold from 5 to 100 mV s−1, superior to 43% capacitance retention of 2D Bi, demonstrating its good rate capability. The high specific capacitance and good rate capability of the as-prepared Bi/CNT SCs are mainly attributed to the excellent electronic conductivity of the exfoliated Bi NSs and CNTs, which can provide an effective charge transport pathway during the charge/discharge process. Meanwhile, the buckled layer structure of the Bi NSs offers abundant active sites with the full surface exposed and enable fast access of electrolyte ions.