context: In addition to such capabilities, integration of CMOS fabrication with silicon micromachining allowed for the incorporation of on-chip circuitry, such as signal amplifiers, multiplexers to reduce output channel count, or application-specific integrated circuits (ASIC). Furthermore, the monolithic integration of on-chip circuitry and electrodes reduced the parasitic capacitance between the circuits. Silicon dioxide films were often used to cover electrodes to reduce artifacts induced at the electrode–electrolyte interface.