context: Fig. 6a shows the transfer characteristics of OECTs fabricated with PBTTT with the two different electrolytes. Without DBSA the ON current of the device is ∼−35 μA at a gate bias of −0.8 V and the ON/OFF ratio is ∼102 with an OFF current ∼10−1 μA. This is of relatively poor performance, but when DBSA is added to the gating electrolyte it has a huge effect on the ON current which increases to −3.1 mA with no change in the ON/OFF ratio. The transconductance, gm increases from 0.05 mS (no DBSA) to 3.9 mS (with DBSA). Again, there is a significant decrease in the operation voltage with a drop in the VON value from 0.35 V to 0.12 V (ΔVON = 0.23 V) (Fig. S1 for IDS1/2 plots, ESI†). Adding DBSA also has a strong and positive effect on the transient gate bias pulse characteristics (Fig. 6b) as well as the output characteristics of PBTTT (Fig. 6c and d): IDS increases ∼25 times from ∼−140 μA without DBSA to ∼−3.3 mA with DBSA.