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Growth of a-Plane GaN Films on r-Plane Sapphire Substrates by Metalorganic Chemical Vapour Deposition

Nonpolar a-plane GaN films were grown on r-plane sapphire substrates by metalorganic chemical vapour deposition (MOCVD) under various conditions. The surface morphologies of epitaxial films are studied by atomic force microscopy. The pit density and size both decrease with the increasing growth temperature, decreasing growth pressure or V/III ratio, while the roughness of the surface increases. Formation mechanisms of the pits in the films are discussed.