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Characterization Of InP On Si Grown By MBE

The characterization of large area InP single crystal films grown by gas-source MBE on (100) Si substrates is described. To accomodate the 8% InP-Si lattice mismatch, a strained-layer superlattice of InGaP was used as a buffer layer. The dislocation density in the InP, as determined by TEM, was 108 cm-2 and the x-ray diffraction line width of the (400) InP peak was found to be 435 arc sec in annealed films. InP films of 3-4 pm in thickness exhibited specular morphology, low temperature photoluminescence line widths of 6-17 meV, and room temperature electron mobilities of 1900-2300 cm2/V-s. These initial results indicate that optoelectronic devices utilizing a monolithic InP/Si technology are feasible.