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On the Determination of the Back Contact Barrier Height of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells

This paper deals with the determination of the height of the back contact diode in CIGS thin film solar cells. Two different methods are explained, namely admittance spectroscopy andVOC(T). Based on the comparison of simulations and experimental data for cells from different manufacturing processes, it could be shown that both methods are suitable for the determination of the back contact diode. Thereby, the cells from the sequential process generally show a better match compared to the coevaporated ones. Furthermore, the impact of a modified back contact was investigated.