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A theoretical calculation for carrier concentration and resistance prediction

Due to lack of analytical solutions for equation of electrical neutrality under thermal equilibrium conditions, a novel and efficient numerical iteration technique was developed. The computational carrier concentration obtained by this new numerical method is in good correlation to commonly cited values and experimental data. Based on this new numerical method effects of some factors on the resistance of silicon piezoresistive pressure sensor were analyzed. Results show that no matter doping concentration is high or low the minority carrier exclusion effect disappears under considerably high current conditions, and increases in bias current induce greater maximum operating temperature; increases in doping concentration can increase the maximum operating temperature and decrease temperature coefficient of resistance.