{'fraction_non_alphanumeric': 0.03293084522502744, 'fraction_numerical': 0.019758507135016465, 'mean_word_length': 4.883870967741935, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A 1.9-GHz DECT CMOS power amplifier with fully integrated multilayer LTCC passives

We present the first demonstration of a CMOS power amplifier (PA) utilizing fully integrated multilayer low-temperature co-fired ceramic (LTCC) high-Q passives for 1.9-GHz digital European cordless telecommunications (DECT) applications. The inductor and capacitor library were built in a multilayer LTCC board using a compact topology. An inductor Q-factor as high as 100 with a self-resonant frequency (SRF) as high as 8 GHz was demonstrated. Measured results of the CMOS-LTCC PA show good agreement with the simulated results exhibiting 48% power added efficiency, 26-dBm output power and 17-dB gain at 1.9 GHz with a 3.3-V drain supply voltage. This result is the first significant step toward a compact DECT transceiver module development utilizing fully integrated multilayer LTCC passives and a standard CMOS technology.