{'fraction_non_alphanumeric': 0.008633093525179856, 'fraction_numerical': 0.0, 'mean_word_length': 5.0, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Transport of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi

We have used numerical methods to investigate the concentration profile of bismuth atoms during liquid phase epitaxial growth of InSbBi and GaSbBi. The one-dimensional diffusive model has been used to study the transport of bismuth atoms at equally spaced layers in the proximity of the epitaxial interface growing under normal conditions of liquid phase epitaxy. The parameters such as growth temperature, cooling rate and melt supercooling have been varied to find out the optimum conditions of growth. The model has also been used to estimate the thickness of the grown layers as a function of growth time.