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A PHYSICAL MODEL OF THE ELECTRICAL BREAKDOWN IN HIGH FIELD SEMICONDUCTOR- DIELECTRIC SYSTEMS

We propose anew comprehensive physical model of the electrical breakdown in high field semiconductor-dielectric systems (HFSDS) on the basis of the physical analysis of a multiple-phase time response of the system to a high voltage pulse. The physical model analyzes the complex physical processes in each of the five phases defined on the time response of the system up to total breakdown and correlates them with the semiconductor, dielectric and system design quality. The model points out the behavior of the two parts (semiconductor and dielectric) and their interaction, and the main role of the semiconductor part in the initiation of the breakdown phenomena in the system. On the basis of a large number of experimental results obtained for various conditions, the present model explains two kinds of breakdown processes in HFSDS : surface flashover and semiconductor bulk breakdown. The first takes place by electrical discharge in an ambient channel close to the interface and the other in the semiconductor sample, in the specimen bulk . While the surface flashover process is dependent on all the system components, the semiconductor breakdown is an intrinsic process dependent on the crystal properties, especially the defect configuration and their dynamics in high fields. The key of the model is offered by the role of the electrical currents in semiconductor, especially the local avalanche current generated by avalanche processes in defect zones of the crystal, for fields much smaller than the ideal critical field of the material.