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Poly-Si thin-film transistors on steel substrates

We report the successful fabrication of poly-Si thin-film transistors (TFTs) on stainless steel substrates. The TFTs were fabricated on a 500 /spl mu/m thick polished stainless steel substrate using furnace crystallized amorphous Si deposited by PECVD. These devices typically have threshold voltages of 8.6 V, linear effective mobilities of 6.2 cm/sup 2//V/spl middot/s and subthreshold slopes of 0.93 decade/V. This work demonstrates the feasibility of poly-Si TFTs on stainless steel substrates and identifies some critical issues involved in poly Si processing on stainless steel. This will enable the fabrication of arrays with integrated drivers on a cheap, flexible and durable substrate for various displays and other large area array microelectronic applications.