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Reversible and nonvolatile modulation of electrical resistance in SnO2 by external strain

Tin oxide (SnO2) microrods exhibited a reversible and nonvolatile semiconductor–insulator transition under an applied mechanical strain and voltage. To understand the origin of this transition, we studied the lattice defects of a SnO2 wire under mechanical strain, using transmission electron microscopy (TEM) and photoluminescence (PL) spectroscopy. The TEM studies indicate slip planes in mechanically bent SnO2 nanowires. The PL spectra of the bent SnO2 microrods show strong visible emission caused by mechanical-stress-induced defects in the band gap, which supported the nonvolatile transition.