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Synthesis and photoluminescence of Si-doped boron carbide nanobelts

It is of great interest to synthesize boron carbide nanomaterials and to explore their novel properties. We reported the synthesis of belt-like Si doping boron carbide nanomaterials at a low temperature of 1500C with no catalyst. The structures and formation mechanism were investigated. Broad photoluminescence spectra between 400-500 nm were observed under 380nm light excitation. The mechanism of blue shift of as-received samples in comparison with reported boron carbide nanostructured materials was discussed.