{'fraction_non_alphanumeric': 0.025899280575539568, 'fraction_numerical': 0.004316546762589928, 'mean_word_length': 5.15929203539823, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Transient-Current Method for Measurement of Active Near-Interface Oxide Traps in 4H-SiC MOS Capacitors and MOSFETs

Measurements of the near-interface oxide traps (NIOTs) aligned to the conduction band of silicon-carbide (SiC) are of particular importance as these active defects are responsible for degradation of the channel-carrier mobility in 4H-SiC MOSFETs. In this brief, a new method for measurement of the active NIOTs with energy levels aligned to the conduction band is proposed. The method utilizes transient-current measurements on 4H-SiC MOS capacitors biased in accumulation. Nitrided oxide and dry oxide are used to illustrate the applicability of the proposed measurement method.