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Band-Edge Electronic Structure and Pre-existing Defects in Remote Plasma Deposited Non-crystalline SiO2 and GeO2

The following topics are addressed: (i) X-ray absorption spectroscopy (XAS) studies of plasma deposited non-crystalline (nc-) SiO2 and GeO2 emphasizing (a) band-edge states and (b) pre-existing bonding defects, and (ii) interpretation of X-ray absorption and photoemission spectra based on many electron theory, including two-electron singlet and triplet electron spin states. The articles also addresses electronic and defect structures in emerging device structures incorporating (GeO2)x(SiO2)1-x alloys, and bonding between Ge and Si substrates and elemental and/or alloy nc-SiO2 and nc-GeO2. The most significant results are identification of local atomic structure of pre-existing defects in the elemental oxides. Defects are created during processing, and are qualitatively different than those produced by X-ray, γ-ray, or high energy electron stressing and detected by second derivative XAS.