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Plasma Preparation of the Top-Quality Phase Change Materials Based on As-Se-Te Chalcogenide System

The excellence of the Plasma-Enhanced Chemical Vapor Deposition (PECVD) approach in terms of preparation of the top-quality phase change materials based on As-Se-Te chalcogenide ternary system has been demonstrated. The samples were synthesized via direct interaction of arsenic, selenium and tellurium vapors into low-temperature non-equilibrium RF (40 MHz) plasma discharge at low pressure. The amorphous films with high degree of structural and chemical uniformity have been prepared in the broad range of contents, in particular, the chemical compositions going beyond the region of glass formation.