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Structure and Properties of Germanium Carbide Films Prepared by RF Reactive Sputtering in Ar/CH4

Germanium carbide ( Gex C1-x ) films have been prepared by RF reactive sputtering at various mixtures of argon and methane from a germanium target. The compositions, structures and properties of Gex C1-x films have been investigated using Auger electron spectroscopy (AES), Visible near-infrared photometer, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The AES analyses show the atomic ratio (Ge/C) of the films decreased with increasing the gas flow ratio CH4/( Ar+CH4 ). The XRD and SEM results indicate that the films were generally smooth and featureless, and had amorphous structure. The refractive index of Gex C1-x films can be varied between 1.8 and 4.3 by changing the gas flow ratio. The hardness values of the films grew with the augmentation of the amount of carbon content in the films, and were higher than those of IR optical material Ge and ZnS. It can be predicted that Gex C1-x films possess excellent abrasion resistance.