{'fraction_non_alphanumeric': 0.026627218934911243, 'fraction_numerical': 0.0029585798816568047, 'mean_word_length': 4.867052023121388, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Application of Single Pulse Dynamics to Model Program and Erase Cycling-Induced Defects in the Tunnel Oxide of Charge-Trapping Devices

3D NAND, the mainstream technology for high density Flash application [1], is typically based on the charge trapping paradigm, i.e. it relies on the storage of information as electrons trapped in a charge trapping layer (CTL). The useful life of these devices is limited by the number of program and erase (P/E) operations, because repeated tunneling of electrons and holes progressively creates defects in the tunneling dielectric (TuOx) that increase the charge leakage from the CTL, compromising retention. In this paper we propose a model that describes the creation of traps in TuOx according to the degradation dynamics within each pulse of a P/E cycle, unlike previous models that describe the creation of traps only as a function of the number of P/E cycles [2]. This enables a precise calculation of created traps in TuOx based on arbitrary stress pulses and workloads.