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GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power Conversion

We report the first comprehensive research about GaN power integrated circuits (ICs) on GaN-on-SOI (silicon-on-insulator). Specific stepped (Al)GaN superlattice buffer and highly robust deep trench isolation are developed. Various components including HEMT, metal-insulator-metal (MIM) capacitor, Schottky barrier diode (SBD), two-dimensional electron gas (2DEG) resistor, and resistor-transistor logic (RTL) are co-integrated, compatible with the p-GaN technology. Based on these achievements, 200 V GaN HEMT with integrated driver shows an extraordinary switching performance. A 48V-to-1V single-stage buck converter is realized using a GaN half-bridge with integrated on-chip drivers. Further, an all-GaN buck converter containing a smart control pulse-width modulation (PWM) circuit, dead-time control, drivers, and half-bridge is successfully designed using the GaN IC platform process design kit (PDK).