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A new static induction thyristor with high forward blocking voltage and excellent switching performances

A new static induction thyristor (SITH) with a strip anode region and p− buffer layer structure (SAP−B) has been successfully designed and fabricated. This structure is composed of a p− buffer layer and lightly doped n− regions embedded in the p+-emitter. Compared with the conventional structure of a buried-gate with a diffused source region (DSR buried-gate), besides the simple fabrication process, the forward blocking voltage of this SITH has been increased to 1600 V from the previous value of 1000 V, the blocking gain increased from 40 to 70, and the turn-off time decreased from 0.8 to 0.4 μs.