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Magnetic memory (MRAM), a new area for 2D and 3D SoC/SiP design

Spintronics Science has emerged in 1988 with the discovery of the Giant Magneto‐Resistance (GMR) effect by Pr Fert and Pr Grünberg, for which they received the 2007 Nobel Prize. In 1991, B. Dieny patented an industrial version of the GMR effect, the Spin‐Valve (SV) configuration which has been progressively introduced, since 1997, in all the Hard Disk Drives (HDDs). Spintronics Science is thus well recognized in the data storage industry and this position was recently reinforced with the introduction by Everspin of the first magnetic solid-state memory (MRAM). This new class of memory today address specific niche markets such as battery backed SRAM but its high level performances combined with a high resistance to harsh environment make it also attractive for space, nuclear or aeronautic markets. Beyond data storage industry, Spintronics Science can propose disruptive technologies that could offer discriminating benefits over classical CMOS counterparts. However, they suffer from quite a dogged industrial mistrust partly due to the “complexity” of this science, to contamination concerns when handling so many unusual materials and to the lack of pre‐industrial prototypes with high level of integration.