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Fine structure of spatial diode photoresponse profiles measured while scanning a narrow strip-shaped illumination spot with FPA diode

The three-dimensional Monte Carlo simulation of charge-carrier diffusion in a mercury-cadmium-tellurium based focal plane array (FPA) was used to calculate the spatial diode photoresponse profiles measured while scanning a narrow strip-shaped illumination spot with a selected FPA diode in the limit of largest and lowest diode photocurrents. The simulation was performed for a standard 2D n-on-p FPA with square photodiodes. Fine features in measured spot-scan profiles due to the presence of FPA structure were identified, and the de-pendence of these features on the boundary conditions for diffusing charge carriers at the n-type diode regions was demonstrated. An explanation to the shape of the profiles, fully con-sistent with the computational procedure of the problem, is given.