{'fraction_non_alphanumeric': 0.023066485753052916, 'fraction_numerical': 0.021709633649932156, 'mean_word_length': 4.309352517985611, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
A new process and tool for metal/high-к gate dielectric stack for sub-45 nm CMOS manufacturing

In this paper we report the results of a new process and tool to deposit metal/high-kappa gate dielectric stack. Hafnium oxide dielectric of 0.39 nm EOT is deposited using monolayer photo-assisted deposition process on a home-built system to provide a reliable and robust process to tackle the needs of the future CMOS generations. We report the results of 0.39 nm EOT gate dielectric material with a leakage current density value of about 1 times 10-12 A/cm2 for gate voltage from +3 V to -3 V. The data presented in this paper demonstrate that the process is robust and manufacturing tools can be developed without any fundamental barrier.