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Telegraph Noise Spectroscopy of Submicron Ta/PbBi Junctions

We report on the noise properties of Ta-Ta oxide-Pb0.9Bi0.1 tunnel junctions of area 0.2-1 µm2 and resistance RN∼15-300 Ω in the frequency range 1 Hz to 105 Hz. The noise power spectrum displays one or several distinct Lorentzian peaks associated with the observed switching of the junction resistance between discrete levels. The switching rates increase with temperature and bias voltage and are unaffected by an applied magnetic field of up to 50 kGauss.