{'fraction_non_alphanumeric': 0.031335149863760216, 'fraction_numerical': 0.0, 'mean_word_length': 5.176470588235294, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Correlation between Volume Fraction of Silicon Clusters in Amorphous Silicon Films and Optical Emission Properties of Si* and SiH*

The volume fraction of silicon clusters in amorphous silicon (a-Si:H) films has been investigated using specially designed quartz crystal microbalances (QCMs) together with optical emission spectroscopy (OES). The optical emission intensities of Si* and SiH* and their intensity ratios are selected for comparison with the QCM results. We show that the volume fraction of silicon clusters strongly correlates with not only the electron temperature but also the SiH* intensity. This suggests that the ratios of Si*/SiH* and SiH* can be used to predict the volume fraction of Si clusters in a-Si:H films.