{'fraction_non_alphanumeric': 0.020442930153321975, 'fraction_numerical': 0.0, 'mean_word_length': 5.527777777777778, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Energy characteristics of excitons in InGaN/GaN heterostructures

The structure and optical properties of the heterostructures, which contain an ultra-thin InGaN layers with GaN or AlGaN barriers, grown by MOCVD method were investigated by photoluminescence and high resolution X-ray diffraction (HRXRD) tehnigue. The exciton localization energy, Urbah energy and charge carries activation energies were obtained from analysis of the temperature dependences of the photoluminescence spectra for the In-rich areas (QDs). In these structures the In-rich areas are shown to appear in ultrathin InGaN layers due to phase decomposition. That leads to exciton and carrier localization in fluctuation minima, which prevents them from tranport to nonradiative recombination centres. The indium composition in the InGaN QDs were obtained using theoretical model, which describes the electron transition energy as a function of In-rich areas parameters. The parameters such as deformation of InGaN/GaN region and layer thickness were determined from HRXRD. The suggested approach is supposed to be effective method for analysis of the optical properties of InGaN/GaN heterostructures.