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Correlation between antisymmetric magnetoresistance and anomalous hall effect in Co1− x Tb x films

The antisymmetric magnetoresistance (MR) and anomalous Hall effect (AHE) of perpendicularly magnetized Co1−x Tb x thin films with different Tb concentration have been investigated under gradient magnetic fields. Owing to the presence of tilting domain walls, the Co1−x Tb x films exhibit anomalous antisymmetric MR, whose polarity reversal is strongly dependent on the film composition and exactly consistent with the simultaneously measured AHE. Our results suggest that the effect of disorder scattering from impurities and dispersive domain wall boundaries is more pronounced in Co1−x Tb x alloy films distant from the compensation point. Moreover, the modulation of AHE coefficient Rs directly leads to the remarkable variation of antisymmetric MR, providing a new insight into design of domain wall based electronic devices.