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Dephasing of free carriers and excitons in bulk CdTe

In this paper we report on the measurements of the dephasing of free carriers and excitons using a self‐diffraction technique in thin platelets of CdTe with different concentration of preparation‐induced dislocations. We show that in a high‐quality sample at low temperature the characteristic dephasing time constant is 1 ps and 2 ps for free carriers and excitons, respectively. The increased concentration of preparation‐induced dislocations leads to much stronger acceleration of the dephasing for free carriers than for excitons. We also discuss the intensity and temperature dependence of the dephasing. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)