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Threshold-Voltage Analytical-Model Development for Junction-less-Double-Gate FETs

A threshold voltage analytical model for Junctionless Double-Gate FETs by considering Gaussian-like vertical doping is shown in this article. To calculate the threshold voltage, first, the two-dimensional Poisson's equation is derived by including the evanescent-mode technique to calculate distribution channel potential in the channel region. The channel potential is considered to be the addition of the conventional device potential obtained by Poisson's solution and the potential function calculated by Laplace equation. Then, the calculated channel potential function has been incorporated in modelling the threshold voltage. The validity of the developed models is verified by comparing with physics based numerical TCAD simulation characteristics obtained by ATLAS TCAD tool and found in good agreement.