{'fraction_non_alphanumeric': 0.024875621890547265, 'fraction_numerical': 0.009950248756218905, 'mean_word_length': 5.163265306122449, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Deep UV pattern definition in PMMA

We have patterned polymethyl methacrylate (PMMA) resist by exposing it to the fifth harmonic (213 nm) of an Nd:YAG source through metalized apertures in contact with the resist. Interference patterns with both near- and far-field origins were observed. In order to test the contrast and uniformity of exposure, we deposited germanium onto developed areas to form arrays with feature sizes of ∼200 nm. We present a straightforward model for interference effects generated in our process, and discuss opportunities for direct-write lithography through single apertures.