{'fraction_non_alphanumeric': 0.01919191919191919, 'fraction_numerical': 0.00808080808080808, 'mean_word_length': 5.117283950617284, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Static and dynamic analysis of SiC based commercial MOSFET power modules

Silicon carbide (SiC) based power semiconductor devices are now considered as key components for future power applications where high power density, high temperature are key requirement parameters, such as converter valve in HVDC and FACTS systems. What is also critical is the short circuit performance (i.e., short circuit withstand capability) in the practical high power application for fault mode protection. This paper deals with static and dynamic measurements performed for SiC based commercial MOSFETs power modules. First dynamic tests using single pulse test setup has been performed with commercial gate drive unit. Results from engineering samples show overall good confidence level. Furthermore, no reverse recovery in the SiC diode is observed. A short circuit analysis in hard switched fault (HSF) mode at 800 V and 600 V showed a short circuit survivability time of over 10 μs for SiC power modules.