{'fraction_non_alphanumeric': 0.01925925925925926, 'fraction_numerical': 0.0014814814814814814, 'mean_word_length': 5.201834862385321, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Two-dimensional analytical potential distribution model for GaN MESFET

A two-dimensional (2D) analytical model is derived in this paper to predict the channel potential of MESFET. The model is based on two-dimensional analytical solution of Poisson's equation with suitable boundary conditions. The analytical result is obtained and verified for GaN MESFET. The result of analytical model is almost similar to the simulation result obtained by Comsol Multiphysics. The variation of channel potential with respect to gate to source voltage, drain to source voltage and channel length is also shown. This model can be used for further device characterization and optimization.