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Synchrotron radiation stimulated etching SiO2 thin films with a contact micropattern mask

In this paper, patterning SiO2 thin film on the Si (100) surface was successfully demonstrated using a synchrotron radiation (SR) stimulated etching technique with SF6 + O2 as the reaction gas and a Co contact mask. The contact Co contact mask on the SiO2 surface was fabricated by sputtering Co film on a photolithography resist pattern and lift-off technique. The thickness of the Co mask measured using a step profile meter was about 145 nm. The SR irradiation with flowing SF6 and O2 can effectively etch the silicon dioxide and the etching process stop at the silicon surface. The etching rate was found to increase with decreasing the substrate temperature. The Co mask was found to show sufficient resistivity for the SR etching. The etched pattern was evaluated by scanning electron microscopy (SEM) and step profile meter.