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X-Ray Diffraction and Photoreflectance Study of CuGaSe2 Epitaxial Layers

The lattice constant a and c and transition energies EA, EB and EC of CuGaSe2 epitaxial layers of different thicknesses grown on GaAs(l00) substrates by iodide MBE are measured by X-ray diffraction and photoreflectance, respectively. EA increases, and EB and EC decrease as the c increases. The change in the transition energies are explained by the tetragonal distortion model using the parameters of the spin-orbit splitting energy Δso=0.232eV, the uniaxial deformation potential b=-1.551eV and the hydrostatic deformation potentials ac-aν=0.392eV.