{'fraction_non_alphanumeric': 0.01098901098901099, 'fraction_numerical': 0.0, 'mean_word_length': 5.339130434782609, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
III-V nanostructures for quantum dot lasers and microcavity devices

The status of quantum dot lasers is discussed, with an emphasis on how the novel electronic density of states can revolutionize the field of semiconductor lasers. The modulation response is discussed in some detail qualitatively, including the importance of equilibrium and nonequilibrium carrier distributions. A modulation response is discussed from the perspective of the intrinsic RC response of the quantum dot active material, which is shown to increase dramatically with increase in inhomogeneous broadening. It is shown that the intrinsic device parameters of a quantum dot laser can be superior to that of planar quantum wells in nearly every aspect.