{'fraction_non_alphanumeric': 0.0228310502283105, 'fraction_numerical': 0.003424657534246575, 'mean_word_length': 5.176056338028169, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Quantum transport of Dirac fermions in graphene field effect transistors

We present a quantum transport simulation of graphene field-effect transistors based on the self consistent solution of 2D-Poisson solver and Dirac equation within the non-equilibrium Green's function formalism. The device operation of double gate 2D-graphene field effect transistors is investigated. The study emphasizes the band-to-band and Klein tunneling processes of massless carriers and the resulting features of the electrostatic modulation of I-V characteristics. A transconductance as high as a few hundreds of μS/μm is observed, despite low on/off current ratios. The model is also extended to massive carriers, which allows us to show the on/off current ratio enhancement due to finite bandgap. The obtained results suggest the feasibility of 2D-graphene devices for analogue applications.