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White-light interferometry for early-stage metal oxide growth characterization

Oxidation of metals can provide a functional oxide film or an oxide layer that can lead to material degradation causing performance limiting concerns. Because of the technological and economic impacts of oxidation, understanding early-stage oxidation growth and its mechanisms is of high importance. Unfortunately, poor empirical data during early-stage oxidation has left our current understanding of oxidation incomplete and woefully inadequate. Measurement techniques previously used for oxidation kinetics characterization include microbalance, x-ray diffraction, Fourier-transform infrared spectroscopy, and spectroscopic ellipsometry. However, these techniques lack the necessary time-resolution or vertical resolution in addition to not providing any spatial data, which is essential to early-stage oxidation studies to understand both oxidation kinetics and mechanisms. A novel rapid and surface-sensitive data collection technique that provides three-dimensional spatial data of a growing oxide layer with sub-nanometer thickness resolution using white-light interferometry has been developed here. This technique will be the first technique capable of providing real-time spatial results of early-stage oxidation growth. The effectiveness of this characterization tool is shown by observing the early-stage oxidation kinetics and film cracking of uranium heated to 90 °C under 500 torr of pure O2. Initially a parabolic oxidation growth is observed. Once the oxide layer reaches ≈30 nm, the epitaxial stresses between the uranium substrate and oxide film layer causes localized cracking in addition to the observed transition of the parabolic growth rate to a linear growth rate. The results of the white-light interferometry are verified by glancing incidence x-ray diffraction.