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Electrical Properties of Ferroelectric Gate HEMT Structures

Electrical properties of ferroelectric BaMgF4 films grown on AlGaAs/GaAs(100) high-electron-mobility transistor (HEMT) structures are investigated. It is shown that a spontaneous polarization of 1.3 µC/cm2 and a coercive field of 200 kV/cm are obtained from polarization vs electric field (P-E) hysteresis measurements for mainly (140)-oriented BaMgF4 films. In addition, a threshold shift (memory window) as large as 1.2 V is demonstrated in capacitance-voltage (C-V) hysteresis measurements for a BaMgF4(140)/HEMT structure in which the growth temperature of the BaMgF4 film is about 550°C. This work indicates that the suitable growth temperature of BaMgF4 films on the HEMT structure is 550°C.