{'fraction_non_alphanumeric': 0.018691588785046728, 'fraction_numerical': 0.0, 'mean_word_length': 5.784810126582278, 'pattern_counts': {'":': 0, '<': 0, '<?xml version=': 0, '>': 0, 'https://': 0, 'lorem ipsum': 0, 'www.': 0, 'xml': 0}, 'pii_count': 0, 'substrings_counts': 0, 'word_list_counts': {'cursed_substrings.json': 0, 'profanity_word_list.json': 0, 'sexual_word_list.json': 0, 'zh_pornsignals.json': 0}}
Single electron tunneling and suppression of short-channel effects in submicron silicon transistors

We report measurements on submicron metal–oxide–semiconductor field effect transistors equipped with a gate on three sides of the channel. At room temperature, a strong suppression of short-channel effects has been achieved for the narrowest channels. At liquid helium temperatures, the same devices exhibit clear conductance oscillations in the subthreshold regime, indicating that a quantum dot has formed in the disordered channel.