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Transfer effects of induced carriers by SAW

In this paper, we investigated transport characteristic of photo-induced carriers by traveling surface acoustic wave for GaN film. We fabricated Al IDT electrode on the GaN film with different conductance. By irradiate UV light on the propagating path and induce carriers in the GaN film, we measured output signal at various irradiating conditions. The results indicated possibility to realize functional devices which integrate GaN semiconductor devices and GaN SAW devices.