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High-Temperature Annealing Effect of Si in Group-V Ambient Prior to Heteroepitaxy of InAs in Metal–Organic Vapor Phase Epitaxy

We investigated the state of the Si(111) surface and its effect on InAs growth after annealing at high temperature with and without an As or P source flow in H2 ambient in metal–organic vapor phase epitaxy (MOVPE). In multi-step growth of InGaAs by micro-channel selective-area growth, perfect coverage of Si growth areas by InAs, which is grown first, by controlling the state of the Si surface is critical for the following InGaAs lateral growth. Although both As and P sources protect the surface against contamination from inside the reactor, annealing with the P source at high temperature is optimal in terms of InAs nucleation and coverage of growth areas by InAs. The amount of O contamination after P annealing at high temperature was significantly lower than that under other annealing conditions. Therefore, O is the most critical contamination in InAs nucleation.