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Non-Contact Characterization of Recombination Processes in 4H-SiC

Carrier decay transients in 4H-SiC n-type and p-type epilayers have been characterized using a non-destructive, non-contact microwave photoconductivity technique. Decay transients show a two-stage exponential decay with first decay constants as high as 400 ns in 10 μm p-type epilayers. The second decay constant increases with temperature and is dominated by interface recombination.