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Evaluation of high-voltage, high-power 4H-SiC insulated-gate bipolar transistors

This paper presents preliminary results on the static and dynamic characterization of 12 kV and 20 kV N-channel silicon carbide Insulated-Gate Bipolar Transistors (IGBTs). These state-of-the-art devices were evaluated for their possible use in pulsed-power and energy conversion applications. The 12 kV IGBTs had a chip area of 0.7 cm2 and were rated for 10 A. Their active area was 0.32 cm2, with a drift region of 140 μm and two different field-stop buffers of 5 μm and 2 μm. The 20 kV IGBTs had a chip area of 1 cm2 and were rated for 12 A. Their active area was 0.37 cm2, with a drift region of 180 μm, and their FSB was 2 μm. The switching and conduction losses were calculated for both devices with short pulses and low-inductance resistive loads. Both types of IGBTs displayed promising results for possible replacement of gas switches and Si IGBTs in high voltage applications.