text: The development of FM metal/FM semiconductor het- 
  erostructures has the potential to bring together the 
  beneﬁts of metal and semiconductor based spintron- 
  ics, oﬀering access to new functionalities and physi- 
  cal phenomena. Recent studies of MnAs/(Ga,Mn)As 
  and NiFe/(Ga,Mn)As bilayer ﬁlms have shown FM in- 
  terlayer coupling and independent magnetization be- 
  havior, respectively4,5. Of particular interest is the 
  Fe/(Ga,Mn)As system, since the growth of epitaxial 
  Fe/GaAs(001) ﬁlms is well-established6. Remarkably, a 
  recent x-ray magnetic circular dichroism (XMCD) study 
  has shown that Fe may induce a proximity polariza- 
  tion in the near-surface region of (Ga,Mn)As, antipar- 
  allel to the Fe moment and persisting even above room 
  temperature7. Devices incorporating Fe/(Ga,Mn)As 
  therefore oﬀer the prospect of obtaining non-volatile 
  room temperature spin-polarization in a semiconductor. 
  Until now, no information has been revealed about the 
  coupling of Fe to (Ga,Mn)As layers away from the near- 
  surface region. At the surface, the (Ga,Mn)As layer may 
  be highly non-stoichiometric and Mn-rich, due to its non- 
  equilibrium nature8,9. Previously, Fe/(Ga,Mn)As layers 
  were produced by a process including exposure to air fol- 
  lowed by sputtering and annealing prior to Fe deposition, 