text: In summary, we have demonstrated antiferromagnetic 
  coupling between Fe and (Ga,Mn)As layers in bilayer 
  structures. A markedly diﬀerent coupling is observed for 
  the bulk of the (Ga,Mn)As layer and for Mn moments 
  in the near-interface region. A thickness-dependent ex- 
  change bias ﬁeld is observed to aﬀect the whole of the 
  bulk (Ga,Mn)As layer, which aligns antiparallel to the 
  Fe layer at low ﬁelds, and switches to parallel when the 
  external ﬁeld is large enough to overcome the bias ﬁeld 
  and the magnetocrystalline anisotropy ﬁelds. In contrast, 
  the interfacial Mn moments remain aligned antiparallel 
  to the Fe layer even at 20 kOe, the largest ﬁeld studied, 
  and are polarized at temperatures well above the TC of 
  the bulk (Ga,Mn)As layer. The latter observation con- 
  ﬁrms the recently reported result of Ref. 7, in which 
  the Fe/(Ga,Mn)As bilayers were produced by a diﬀerent 
  method but showed qualitatively similar behavior of the 
  interfacial moments. Our results shed new light on the 
  magnetic coupling in Fe/(Ga,Mn)As hybrid layers which 
  are of potential interest for room temperature spintron- 
  ics, and also oﬀer a means of controlling the spin orien- 
  tation in a FM semiconductor. 
  from EU grants 
  acknowledge 
  and 
  SemiSpinNet-215368 
  STFC studentship grant CMPC07100. The Advanced 
  Light Source is supported by the U.S. Department of 
  Energy under Contract No. 
  DE-AC02-05CH11231. 
  We thank Leigh Shelford for help during the Diamond 
  beamtime. 
  
  We 