text: K. Olejnik,1, 2 P. Wadley,3 J. Haigh,3 K. W. Edmonds,3 R. P. Campion,3 A. W. Rushforth,3 B. L. Gallagher,3 
  C. T. Foxon,3 T. Jungwirth,2, 3 J. Wunderlich,1, 2 S. S. Dhesi,4 S. Cavill,4 G. van der Laan,4 and E. Arenholz5 
  1Hitachi Cambridge Laboratory, Cambridge CB3 0HE, United Kingdom 
  2Institute of Physics ASCR, v.v.i., Cukrovarnicka 10, 16253 Praha 6, Czech Republic 
  3School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom 
  4Diamond Light Source, Harwell Science and Innovation Campus, 
  Didcot, Oxfordshire, OX11 0DE, United Kingdom 
  5Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 
  (Dated: August 24, 2018) 
  
  We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin 
  overlayer of Fe. Bias ﬁelds of up to 240 Oe are observed. Using element-speciﬁc x-ray magnetic 
  circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface 
  layer in addition to the biassed bulk of the (Ga,Mn)As ﬁlm. The interface layer remains polarized 
  at room temperature. 