text: The Fe and (Ga,Mn)As layers of the present study 
  were both grown by molecular beam epitaxy in the same 
  ultra-high vacuum system, in order to ensure a clean in- 
  terface between them. The (Ga,Mn)As layer of thickness 
  10 to 50 nm was deposited on a GaAs(001) substrate 
  at a temperature of 260◦C, using previously established 
  methods3,8. A low Mn concentration of x ≈ 0.03 was 
  chosen in order to avoid the formation of compensating 
  Mn interstitials. The substrate temperature was then 
  reduced to ∼0◦C, before depositing a 2 nm Fe layer, 
  plus a 2 nm Al capping layer. 
  In-situ reﬂection high 
  energy electron diﬀraction and ex-situ x-ray reﬂectivity 
  and diﬀraction measurements conﬁrmed that the layers 
  are single-crystalline with sub-nm interface roughness. 
  SQUID magnetometry measurements were performed us- 
  ing a Quantum Design Magnetic Property Measurement 
  System. Mn and Fe L2,3 x-ray absorption and XMCD 